Cd ion implantation in AlN

NASA Astrophysics Data System (ADS)

Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

2012-10-01

AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

Annealing kinetics of radiation defects in boron-implanted p-Hg1‑xCdxTe

NASA Astrophysics Data System (ADS)

Talipov, Niyaz; Voitsekhovskii, Alexander

2018-06-01

The results of studying the annealing kinetics of the radiation-induced donor-type defects in boron implanted p-type Hg1‑x Cd x Te (MCT) are presented. The annealing kinetics of the radiation donor centers depend significantly on the dose of B+ ions, that is on the initial level of structural defects generated in the MCT lattice by ion bombardment. The activation energy E A of annealing of donor defects generated by implantation of B+ ions increases with increasing dose and temperature of the post-implantation heat treatment under the SiO2 cap. The smaller the dose and the higher the initial hole concentration in p-MCT, the lower the temperature of a complete annealing of donor centers, which lies in the range 220–275 °C. In the initial stages of the post-implantation heat treatment, primary donor defects are annealed, and then, more stable secondary impurity-defect complexes are annealed. It was established for the first time that the activation energy of the donor defects annealing in bulk crystals and heteroepitaxial structures of MCT has two clearly pronounced regions: at low temperatures 90–130 °C, E A = 0.06 eV and at Т = 150–250 °C, E A = 0.71–0.86 eV.

Robust p-type doping of copper oxide using nitrogen implantation

NASA Astrophysics Data System (ADS)

Jorge, Marina; Polyakov, Stanislav M.; Cooil, Simon; Schenk, Alex K.; Edmonds, Mark; Thomsen, Lars; Mazzola, Federico; Wells, Justin W.

2017-07-01

We demonstrate robust p-type doping of Cu2O using low/medium energy ion implantation. Samples are made by controlled oxidation of annealed Cu metal foils, which results in Cu2O with levels of doping close to intrinsic. Samples are then implanted with nitrogen ions using a kinetic energy in the few keV range. Using this method, we are able to produce very high levels of doping, as evidenced by a 350 meV shift in the Fermi level towards the VB maximum. The robustness of the nitrogen implanted samples are tested by exposing them to atmospheric contaminants, and elevated temperatures. The samples are found to survive an increase in temperature of many hundreds of degrees. The robustness of the samples, combined with the fact that the materials used are safe, abundant and non-toxic and that the methods used for the growth of Cu2O and N+ implantation are simple and cheap to implement industrially, underlines the potential of Cu2O:N for affordable intermediate band photovoltaics.

Avalanche Photoconductive Switching

DTIC Science & Technology

1989-06-01

implantation and by MBE growth , and p-type material was created by MBE growth of a Be doped layer. Ion implantation creates a heavily doped layer...which is used commonly for GaAs integrated circuits. We plan to use Ti-Pt-Au for p-type contacts in the future. Experimental Results Test Confi...optical wavelenght does not significantly affect the switching process. Another feature of this mode of operation is that there is a threshold

Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride

NASA Astrophysics Data System (ADS)

Kumar, Rakesh; Dutt, M. B.; Nath, R.; Gopal, Vishnu; Khosla, Y. P.; Sharma, K. K.

1992-02-01

Radiation damage due to B+ ion implantation in p-type HgCdTe has been found to create Hg interstitials giving rise to n-type conversion. The implantation energies were kept at 50 and 100 keV with a dose of 1 X 1013 cm-2 each. The effect of implantation with ascending and descending orders of energies were found to be quite different from each other. Radiation enhanced diffusion is thought to be responsible for this anomaly.

Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

NASA Astrophysics Data System (ADS)

Ahmad, M.; Naddaf, M.

2011-11-01

P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.

Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

NASA Astrophysics Data System (ADS)

Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

2018-02-01

This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

Method of forming thermally stable high-resistivity regions in n-type indium phosphide by oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thompson, P.E.; Dietrich, H.B.

1985-12-12

Objects of this invention are: to form high-temperature stable isolation regions in InP; to provide InP wafers that allow greater flexibility in the design and fabrication of discrete devices; to provide new and improved InP semiconductor devices in n-type InP; to provide high-resisitivity isolation regions in InP; to extend the usefulness of damage-induced isolation in n-type InP by making possible processes in which the isolation implantation precedes the alloying of ohmic contacts; and to provide n-type InP substrates without unwanted conductive layers. The above and other object are realized by an InP wafer comprising a S.I. InP substrate; a n-typemore » InP active layer disposed on the substrate; and oxygen ion implanted isolation regions disposed in the active layer. The S.I. InP dopant may comprise either Fe or Cr.« less

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrof, Julian; Müller, Ralph; Reedy, Robert C.

2015-07-28

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detailmore » by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3 diffusion« less

Impact of Mg-ion implantation with various fluence ranges on optical properties of n-type GaN

NASA Astrophysics Data System (ADS)

Tsuge, Hirofumi; Ikeda, Kiyoji; Kato, Shigeki; Nishimura, Tomoaki; Nakamura, Tohru; Kuriyama, Kazuo; Mishima, Tomoyoshi

2017-10-01

Optical characteristics of Mg-ion implanted GaN layers with various fluence ranges were evaluated. Mg ion implantation was performed twice at energies of 30 and 60 keV on n-GaN layers. The first implantation at 30 keV was performed with three different fluence ranges of 1.0 × 1014, 1.0 × 1015 and 5.0 × 1015 cm-2. The second implantation at an energy of 60 keV was performed with a fluence of 6.5 × 1013 cm-2. After implantation, samples were annealed at 1250 °C for 1 min under N2 atmosphere. Photoluminescence (PL) spectrum of the GaN layer with the Mg ion implantation at the fluence range of 1.0 × 1014 cm-2 at 30 keV was similar to the one of Mg-doped p-GaN layers grown by MOVPE (Metal-Organic Vapor Phase Epitaxy) on free-standing GaN substrates and those at the fluence ranges over 1.0 × 1015 cm-2 were largely degraded.

Implantation of sodium ions into germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korol', V. M., E-mail: vkorol@ctsnet.ru; Kudriavtsev, Yu.

The donor properties of Na atoms introduced by ion implantation into p-Ge with the resistivity 20-40 {Omega} cm are established for the first time. Na profiles implanted into Ge (the energies 70 and 77 keV and the doses (0.8, 3, 30) Multiplication-Sign 10{sup 14} cm{sup -2}) are studied. The doses and annealing temperatures at which the thermoprobe detects n-type conductivity on the sample surface are established. After implantation, the profiles exhibit an extended tail. The depth of the concentration maximum is in good agreement with the calculated mean projected range of Na ions R{sub p}. Annealing for 30 min atmore » temperatures of 250-700 Degree-Sign C brings about a redistribution of Na atoms with the formation of segregation peaks at a depth, which is dependent on the ion dose, and is accompanied by the diffusion of Na atoms to the surface with subsequent evaporation. After annealing at 700 Degree-Sign C less than 7% of the implanted ions remain in the matrix. The shape of the profile tail portions measured after annealing at temperatures 300-400 Degree-Sign C is indicative of the diffusion of a small fraction of Na atoms into the depth of the sample.« less

Optical properties of P ion implanted ZnO

NASA Astrophysics Data System (ADS)

Pong, Bao-Jen; Chou, Bo-Wei; Pan, Ching-Jen; Tsao, Fu-Chun; Chi, Gou-Chung

2006-02-01

Red and green emissions are observed from P ion implanted ZnO. Red emission at ~680 nm (1.82 eV) is associated with the donor-acceptor pair (DAP) transition, where the corresponding donor and acceptor are interstitial zinc (Zn i) and interstitial oxygen (O i), respectively. Green emission at ~ 516 nm (2.40 eV) is associated with the transition between the conduction band and antisite oxygen (O Zn). Green emission at ~516nm (2.403 eV) was observed for ZnO annealed at 800 oC under ambient oxygen, whereas, it was not visible when it was annealed in ambient nitrogen. Hence, the green emission is most likely not related to oxygen vacancies on ZnO sample, which might be related to the cleanliness of ZnO surface, a detailed study is in progress. The observed micro-strain is larger for N ion implanted ZnO than that for P ion implanted ZnO. It is attributed to the larger straggle of N ion implanted ZnO than that of P ion implanted ZnO. Similar phenomenon is also observed in Be and Mg ion implanted GaN.

Ion beam modification of topological insulator bismuth selenide

DOE PAGES

Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; ...

2014-12-17

In this study, we demonstrate chemical doping of a topological insulator Bi 2Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2Se 3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allowmore » better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.« less

Ion implantation damage, annealing and dopant activation in epitaxial gallium nitride

NASA Astrophysics Data System (ADS)

Suvkhanov, Agajan

2001-07-01

Successful n- and p-doping of GaN is an extremely important technological problem. More recently, ion implantation has been used to achieve both n- and p-type GaN. The ion implantation process is accompanied by the presence of radiation defects as the result of the ion-solid interactions. The temperatures (above 1000°C) required for recovery of the implantation induced damage and dopant activation strongly affect the GaN's surface integrity due to the significant nitrogen vapor pressure. Preservation of the surface integrity of GaN during high temperature post-implantation annealing is one of the key issues in the fabrication of GaN-based light-emitting devices. The radiation damage build-up in the implanted GaN layers has been investigated as a function of ion dose and the substrate's temperature. Results of measurements of structural damage by the Rutherford backscattering/Channeling (RBS/C) and the spectroscopic ellipsometry (SE) techniques have demonstrated the complex nature of the damage build-up. Analysis of GaN implanted at high temperature has demonstrated the presence of competing processes of layer-by-layer damage build-up and defect annihilation. Using a capping layer and annealing in a sealed quartz capsule filled with dry nitrogen can preserve the integrity of the GaN's surface. In this work the ion-implanted GaN samples were capped with 40 run MOCVD (Metal Organic Chemical Vapor Deposition) grown AlN film prior to annealing. The results of this work showed the advantage of high-temperature annealing of implanted GaN in a quartz capsule with nitrogen ambient, as compared with annealing in argon and nitrogen gas flow. Partial to complete decomposition of the AlN cap and underlying GaN has been observed by RBS/C and SEM (Scanning electron microscopy) for the samples annealed in flowing argon, as well as for the samples processed in flowing nitrogen. Encapsulation with nitrogen overpressure prevented the decomposition of the AlN capping film and the GaN crystal, and made it possible to achieve optical activation of the implanted Mg + and Si+ ions. PL measurements at 16 K of GaN samples implanted with Mg+ and annealed in a capsule showed three relatively strong peaks at 211, 303, and 395 meV from the band-edge emission. The relative intensity of the "yellow" band emission (i.e. defect band) was several times lower in the case of annealing in a sealed capsule as compared to that of open anneals in flowing argon or nitrogen. A separate set of specially-grown GaN samples was used for low temperature (1.8 K) PL analysis of the activation properties of Mg+-implanted and Mg+/P+-implanted samples. The samples were annealed in Rapid thermal processor (RTP) at 1300°C for 10 s with AlON encapsulation in flowing N2. The Mg+ implants showed good optical activation, producing a dose-correlated acceptor bound exciton peak with 12.2 meV localization energy, and donor-to-acceptor and band-to-acceptor peaks at 3.270 and 3.284 eV, respectively. The spectroscopic Mg acceptor binding energy was found to be 224 meV. A broad peak at 2.35 eV is attributed to implantation-induced defects stable in p-type material.

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Alfieri, G.; Sundaramoorthy, V. K.; Micheletto, R.

2018-05-01

Magnesium (Mg) is the p-type doping of choice for GaN, and selective area doping by ion implantation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, not much is known about defects generated by ion implantation. This is especially true for the case of Mg. In this study, we carried out an electrical characterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2-1.2 eV energy range, below the conduction band. The isochronal annealing behavior of these levels showed that most of them are thermally stable up to 1000 °C. The nature of the detected defects is then discussed in the light of the results found in the literature.

Homojunction silicon solar cells doping by ion implantation

NASA Astrophysics Data System (ADS)

Milési, Frédéric; Coig, Marianne; Lerat, Jean-François; Desrues, Thibaut; Le Perchec, Jérôme; Lanterne, Adeline; Lachal, Laurent; Mazen, Frédéric

2017-10-01

Production costs and energy efficiency are the main priorities for the photovoltaic (PV) industry (COP21 conclusions). To lower costs and increase efficiency, we are proposing to reduce the number of processing steps involved in the manufacture of N-type Passivated Rear Totally Diffused (PERT) silicon solar cells. Replacing the conventional thermal diffusion doping steps by ion implantation followed by thermal annealing allows reducing the number of steps from 7 to 3 while maintaining similar efficiency. This alternative approach was investigated in the present work. Beamline and plasma immersion ion implantation (BLII and PIII) methods were used to insert n-(phosphorus) and p-type (boron) dopants into the Si substrate. With higher throughput and lower costs, PIII is a better candidate for the photovoltaic industry, compared to BL. However, the optimization of the plasma conditions is demanding and more complex than the beamline approach. Subsequent annealing was performed on selected samples to activate the dopants on both sides of the solar cell. Two annealing methods were investigated: soak and spike thermal annealing. Best performing solar cells, showing a PV efficiency of about 20%, was obtained using spike annealing with adapted ion implantation conditions.

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

NASA Astrophysics Data System (ADS)

Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

2006-09-01

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 × 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrof, Julian, E-mail: julian.schrof@ise.fraunhofer.de; Müller, Ralph; Benick, Jan

2015-07-28

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in moremore » detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.« less

On-chip very low junction temperature GaN-based light emitting diodes by selective ion implantation

NASA Astrophysics Data System (ADS)

Cheng, Yun-Wei; Chen, Hung-Hsien; Ke, Min-Yung; Chen, Cheng-Pin; Huang, JianJang

2008-08-01

We propose an on-wafer heat relaxation technology by selectively ion-implanted in part of the p-type GaN to decrease the junction temperature in the LED structure. The Si dopant implantation energy and concentration are characterized to exhibit peak carrier density 1×1018 cm-3 at the depth of 137.6 nm after activation in nitrogen ambient at 750 °C for 30 minutes. The implantation schedule is designed to neutralize the selected region or to create a reverse p-n diode in the p-GaN layer, which acts as the cold zone for heat dissipation. The cold zone with lower effective carrier concentration and thus higher resistance is able to divert the current path. Therefore, the electrical power consumption through the cold zone was reduced, resulting in less optical power emission from the quantum well under the cold zone. Using the diode forward voltage method to extract junction temperature, when the injection current increases from 10 to 60 mA, the junction temperature of the ion-implanted LED increases from 34.3 °C to 42.3 °C, while that of the conventional one rises from 30.3 °C to 63.6 °C. At 100 mA, the output power of the ion-implanted device is 6.09 % higher than that of the conventional device. The slight increase of optical power is due to the increase of current density outside the cold zone region of the implanted device and reduced junction temperature. The result indicates that our approach improves thermal dissipation and meanwhile maintains the linearity of L-I curves.

Local and systemic changes associated with long-term, percutaneous, static implantation with titanium alloys in rhesus macaques (Macaca mulatta)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frydman, Galit F.; Marini, Robert P.; Bakthavatchalu, Vasudevan

Metal alloys are frequently used as implant materials in veterinary medicine. Recent studies suggest that many types of metal alloys may induce both local and systemic inflammatory responses. In this study, 37 rhesus macaques with long-term skull-anchored percutaneous titanium alloy implants (0-14 years duration) were evaluated for changes in their hematology, coagulation and serum chemistry profiles. Negative controls (n=28) did not have implants. All of the implanted animals were on IACUC-approved protocols and were not implanted for the purpose of this study. Animals with implants had significantly higher plasma D-dimer and lower antithrombin III concentrations compared with nonimplanted animals (p-valuesmore » < 0.05). Additionally, animals with implants had significantly higher globulin, and lower albumin and calcium concentrations compared with nonimplanted animals (p-values < 0.05). Many of these changes were positively correlated with duration of implantation as well as the number of implants. Chronic bacterial infection was observed on the skin around many of the implant sites, and within deeper tissues. Representative histopathology around the implant site of two implanted animals revealed chronic suppurative to pyogranulomatous inflammation extending from the skin to the dura mater. X-ray fluorescence microscopy of tissue biopsies from the implant site of the same two animals revealed significant increases in free metal ions within the tissue, including titanium and iron. Free metal ions persisted in the tissues up to 6 months postexplant. These results suggest that long-term skull-anchored percutaneous titanium alloy implants results in localized inflammation, chronic infection, and leaching of metal ions into local tissues.« less

Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

NASA Astrophysics Data System (ADS)

Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

Effect of ion-implantation on surface characteristics of nickel titanium and titanium molybdenum alloy arch wires.

PubMed

Krishnan, Manu; Saraswathy, Seema; Sukumaran, Kalathil; Abraham, Kurian Mathew

2013-01-01

To evaluate the changes in surface roughness and frictional features of 'ion-implanted nickel titanium (NiTi) and titanium molybdenum alloy (TMA) arch wires' from its conventional types in an in-vitro laboratory set up. 'Ion-implanted NiTi and low friction TMA arch wires' were assessed for surface roughness with scanning electron microscopy (SEM) and 3 dimensional (3D) optical profilometry. Frictional forces were studied in a universal testing machine. Surface roughness of arch wires were determined as Root Mean Square (RMS) values in nanometers and Frictional Forces (FF) in grams. Mean values of RMS and FF were compared by Student's 't' test and one way analysis of variance (ANOVA). SEM images showed a smooth topography for ion-implanted versions. 3D optical profilometry demonstrated reduction of RMS values by 58.43% for ion-implanted NiTi (795.95 to 330.87 nm) and 48.90% for TMA groups (463.28 to 236.35 nm) from controls. Nonetheless, the corresponding decrease in FF was only 29.18% for NiTi and 22.04% for TMA, suggesting partial correction of surface roughness and disproportionate reduction in frictional forces with ion-implantation. Though the reductions were highly significant at P < 0.001, relations between surface roughness and frictional forces remained non conclusive even after ion-implantation. The study proved that ion-implantation can significantly reduce the surface roughness of NiTi and TMA wires but could not make a similar reduction in frictional forces. This can be attributed to the inherent differences in stiffness and surface reactivity of NiTi and TMA wires when used in combination with stainless steel brackets, which needs further investigations.

Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films

NASA Astrophysics Data System (ADS)

Majid, Abdul; Ahmad, Naeem; Rizwan, Muhammad; Khan, Salah Ud-Din; Ali, Fekri Abdulraqeb Ahmed; Zhu, Jianjun

2018-02-01

Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 1016 ions/cm2 and 5 × 1016 ions/cm2. The as-grown and post-implantation-thermally-annealed samples were studied in detail using x-ray photoelectron spectroscopy (XPS). The XPS peaks of Ga 3 d, Ga 2 p, N 1 s, Mn 2 p and C 1 s were recorded in addition to a full survey of the samples. The doublet peaks of Ga 2 p for pure GaN were observed blue-shifted when compared with elemental Ga, and appeared further shifted to higher energies for the implanted samples. These observations point to changes in the bonds and the chemical environment of the host as a result of ion implantation. The results revealed broadening of the N 1 s peak after implantation, which is interpreted in terms of the presence of N-Mn bonds in addition to N-Ga bonds. The XPS spectra of Mn 2 p recorded for ion-implanted samples indicated splitting of Mn 2 p 1/2 and Mn 2 p 3/2 peaks higher than that for metallic Mn, which helps rule out the possibility of clustering and points to substitutional doping of Mn. These observations provide a framework that sheds light on the local environment of the material for understanding the mechanism of magnetic exchange interactions in Mn:GaN based diluted magnetic semiconductors.

Metal ion levels in patients with stainless steel spinal instrumentation.

PubMed

McPhee, I Bruce; Swanson, Cheryl E

2007-08-15

Case-control study. To determine whether metal ion concentrations are elevated in patients with spinal instrumentation. Studies have shown that serum and urinary levels of component metal ions are abnormally elevated in patients with total joint arthroplasties. Little is known of metal ion release and concentrations in patients with spinal instrumentation. The study group consisted of patients who had undergone spinal instrumentation for various spinal disorders with a variety of stainless steel implants, 5 to 25 years previously. A group of volunteers without metal implants were controls. All subjects were tested for serum nickel, blood chromium, and random urine chromium/creatinine ratio estimation. The study group consisted of 32 patients with retained implants and 12 patients whose implants had been removed. There were 26 unmatched controls. There was no difference in serum nickel and blood chromium levels between all 3 groups. The mean urinary chromium/creatinine ratio for patients with implants and those with implants removed was significantly greater than controls (P < 0.001). The difference between study subgroups was not significant (P = 0.16). Of several patient and instrumentation variables, only the number of couplings approached significance for correlation with the urine chromium excretion (P = 0.07). Spinal implants do not raise the levels of serum nickel and blood chromium. There is evidence that metal ions are released from spinal implants and excreted in urine. The excretion of chromium in patients with spinal implants was significantly greater than normal controls although lower where the implants have been removed. The findings are consistent with low-grade release of ions from implants with rapid clearance, thus maintaining normal serum levels. Levels of metal ions in the body fluids probably do not reach a level that causes late side-effect; hence, routine removal of the implants cannot be recommended.

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

NASA Astrophysics Data System (ADS)

Mandal, Saptarshi; Agarwal, Anchal; Ahmadi, Elaheh; Mahadeva Bhat, K.; Laurent, Matthew A.; Keller, Stacia; Chowdhury, Srabanti

2017-08-01

In this work, a study of two different types of current aperture vertical electron transistor (CAVET) with ion-implanted blocking layer are presented. The device fabrication and performance limitation of a CAVET with a dielectric gate is discussed, and the breakdown limiting structure is evaluated using on-wafer test structures. The gate dielectric limited the device breakdown to 50V, while the blocking layer was able to withstand over 400V. To improve the device performance, an alternative CAVET structure with a p-GaN gate instead of dielectric is designed and realized. The pGaN gated CAVET structure increased the breakdown voltage to over 400V. Measurement of test structures on the wafer showed the breakdown was limited by the blocking layer instead of the gate p-n junction.

Laser Annealing of Ion Implanted HgCdTe.

DTIC Science & Technology

1984-10-22

are /A 󈧳e10 4cm 2V- sec- and .(p) OA 103m mV - sec respectively. The above observations all lead to the conclusion that the donors in as-implanted...conductance. ". 5 Measured Hall Constante Hall Mobility Conductivuty Parameters type 2. Cb- (c2 v- - RH (cm.C ) Ac.v* ) Sample ....- 2 3 -1 -1A RH ...4.29.10 U=1.03.103 c(l -)- x=0.28 P ( 3 16 2.4 unimplanted ,,c -2-.l A RH .3.08"l0Z " .sYn-1 ) . Boron Implantation n n (cm a 16s. 4 48 ൒ U.12-10 1S

Ion Implantation Studies of Titanium Metal Surfaces.

DTIC Science & Technology

1981-01-01

sf.Th. 82-0 327 11,y 604.)___ _ 4 . TITLE (and Subtitle) S. TYPE OF REPORT & PERIOD COVERED Final Ion Implantation Studies of Titanium Metal Suf s 6 ...AD-A113 7ag GEORGIA INST OF TECH ATLANTA SCHOOL OF PHYSICS FIG 11/ 6 ION IMPLANTATION STUDOIES OF TITANIUM METAL SURtFACES. (U) 1901 J R STEVENSON. K...LL0 kpproved ror 82 4 ±s~rutic iui.~o 82r-~~ ION IMPLANTATION STUDIES OF TITANIUM METAL SURFACES SECURITY CLASSIFICATION OIOF THIS PAGE (0fen Date

Comparison of surface characteristics of retrieved cobalt-chromium femoral heads with and without ion implantation.

PubMed

McGrory, Brian J; Ruterbories, James M; Pawar, Vivek D; Thomas, Reginald K; Salehi, Abraham B

2012-01-01

Nitrogen ion implantation of CoCr is reported to produce increased surface hardness and a lower friction surface. Femoral heads with and without ion implantation retrieved from 1997 to 2003 were evaluated for surface roughness (average surface roughness [Ra], mean peak height [Rpm], and maximum distance from peak to valley [Rmax]), nanohardness, and the ion-treated layer thickness. The difference in average Rmax (P = .033) and average Rpm (P = .008) was statistically significant, but there was no correlation between the average or maximum roughness parameters (average surface roughness, Rmax, and Rpm) and time in vivo (P > .05). Overall, nanohardness was greater for the low-friction ion-treated heads (P < .001); and it decreased with increasing time in vivo (P = .01). Ion treatment produces an increased surface hardness, but the advantage of this increased hardness appears to dissipate over time in vivo. Copyright © 2012 Elsevier Inc. All rights reserved.

Formation of Porous Germanium Layers by Silver-Ion Implantation

NASA Astrophysics Data System (ADS)

Stepanov, A. L.; Vorob'ev, V. V.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Yu. N.

2018-04-01

We propose a method for the formation of porous germanium ( P-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag+ ions into single-crystalline germanium ( c-Ge). This is demonstrated by implantation of 30-keV Ag+ ions into a polished c-Ge plate to a dose of 1.5 × 1017 ion/cm2 at an ion beam-current density of 5 μA/cm2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c-Ge surface led to the formation of a P-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ˜10-20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag+ ion implantation is accompanied by effective sputtering of the Ge surface.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Integration of Indium Phosphide Based Devices with Flexible Substrates

NASA Astrophysics Data System (ADS)

Chen, Wayne Huai

2011-12-01

Flexible substrates have many advantages in applications where bendability, space, or weight play important roles or where rigid circuits are undesirable. However, conventional flexible thin film transistors are typically characterized as having low carrier mobility as compared to devices used in the electronics industry. This is in part due to the limited temperature tolerance of plastic flexible substrates, which commonly reduces the highest processing temperature to below 200°C. Common approaches of implementation include low temperature deposition of organic, amorphous, or polycrystalline semiconductors, all of which result in carrier mobility well below 100 cm2V -1s-1. High quality, single crystalline III-V semiconductors such as indium phosphide (InP), on the other hand, have carrier mobility well over 1000 cm 2V-1s-1 at room temperature, depending on carrier concentration. Recently, the ion-cut process has been used in conjunction with wafer bonding to integrate thin layers of III-V material onto silicon for optoelectronic applications. This approach has the advantage of high scalability, reusability of the initial III-V substrate, and the ability to tailor the location (depth) of the layer splitting. However, the transferred substrate usually suffers from hydrogen implantation damage. This dissertation demonstrates a new approach to enable integration of InP with various substrates, called the double-flip transfer process. The process combines ion-cutting with adhesive bonding. The problem of hydrogen implantation was overcome by patterned ion-cut transfer. In this type of transfer, areas of interest are shielded from implantation but still transferred by surrounding implanted regions. We found that patterned ion-cut transfer is strongly dependent upon crystal orientation and that using cleavage-plane oriented donors can be beneficial in transferring large areas of high quality semiconductor material. InP-based devices were fabricated to demonstrate the transfer process and test functionality following transfer. Passive devices (photodetectors) as well as active transistors were transferred and fabricated on various substrates. The transferred device layers were either implanted through with a blanket implant or protected with an ion-mask during implantation. Results demonstrate the viability of the double-flip ion-cut process in achieving very high electron mobility (˜2800 cm2V-1s-1) transistors on plastic flexible substrates.

Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ostafiychuk, B. K.; Yaremiy, I. P., E-mail: yaremiy@rambler.ru; Yaremiy, S. I.

2013-12-15

The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

Modification of electrical properties of topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Peter Anand

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

Creation of High-Yield Polyhydroxyalkanoates Engineered Strains by Low Energy Ion Implantation

NASA Astrophysics Data System (ADS)

Qian, Shiquan; Cheng, Ying; Zhu, Suwen; Cheng, Beijiu

2008-12-01

Polyhydroxyalkanoates (PHAs), as a candidate for biodegradable plastic materials, can be synthesized by numerous microorganisms. However, as its production cost is high in comparison with those of chemically synthesized plastics, a lot of research has been focused on the efficient production of PHAs using different methods. In the present study, the mutation effects of PHAs production in strain pCB4 were investigated with implantation of low energy ions. It was found that under the implantation conditions of 7.8 × 1014 N+/cm2 at 10 keV, a high-yield PHAs strain with high genetic stability was generated from many mutants. After optimizing its fermentation conditions, the biomass, PHAs concentration and PHAs content of pCBH4 reached 2.26 g/L, 1.81 g/L, and 80.08% respectively, whereas its wild type controls were about 1.24 g/L, 0.61 g/L, and 49.20%. Moreover, the main constituent of PHAs was identified as poly-3-hydroxybutyrates (PHB) in the mutant stain and the yield of this compound was increased up to 41.33% in contrast to that of 27.78% in the wild type strain.

Effect of the Graded-Gap Layer Composition on the Formation of n + -n - -p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1- x Te Layers

NASA Astrophysics Data System (ADS)

Talipov, N. Kh.; Voitsekhovskii, А. V.; Grigor'ev, D. V.

2014-07-01

Processes of formation of n + -n--p-structures in boron-implanted heteroepitaxial (HEL) CdxHg1-xTe (CMT) layers of p-type grown by molecular beam epitaxy (HEL CMT MBE) with different compositions of the upper graded-gap layer are studied. It is shown that the surface composition (xs) of HEL CMT MBE significantly affects both the electrical parameters of the implanted layer and the spatial distribution of radiation defects of donor type. For HEL CMT MBE with the small surface composition xs = 0.22-0.33, it is found that the layer electron concentration (Ns) is decreased after saturation with accumulation of radiation defects, as the dose of B+ ions is increased in the range of D = 1ṡ1011-3ṡ1015 сm-2. An increase of the surface composition up to xs = 0.49-0.56 results in a significant decrease in Ns and a disappearance of the saturation of concentration in the whole dose range. The value of Ns monotonically increases with the energy (E) of boron ions and composition xs. It is found that for B+-ion energies E = 20-100 keV, the depth of the surface n + -layer increases with increasing energy and exceeds the total projected path of boron ions. However, in the energy range E = 100-150 keV, the depth of n+-layer stops increasing with the increase of the surface composition. The depth (dn) of a lightly doped n--layer monotonically decreases with increasing energy of boron ions in the entire range of E = 20-150 keV. With increasing dose (D) of B+ ions in the interval D = 1ṡ1014-1ṡ1015сm-2, deep n--layers with dn = 4-5 μm are formed only in the HEL CMT MBE with xs = 0.22-0.33. For the samples with xs = 0.49-0.56, the depth changes in the interval dn = 1.5-2.5 μm. At D ≤ 3ṡ1013сm-2, n + -n--p-structure is not formed for all surface compositions, if implantation is performed at room temperature. However, implantation at T = 130°C leads to the formation of a deep n--layer. Planar photodiodes with the n-p-junction area of A = 35×35 μm2 made on the basis of the boron implanted HEL CMT MBE with the surface compositions xs = 0.33-0.56 had high differential resistance Rd = 3ṡ106-107 Ω•cm2 and high product R0 Aeff = 9.0-20.7 Ω•cm2, where Aeff is the effective area of the charge carrier collecting. The values of Rd and R0 Aeff increased with increasing xs. It is found that the layer electron concentration in the boron implanted HEL CMT MBE with different surface compositions is increased, when exposed to normal conditions for a few years.

Release of cobalt and chromium ions into the serum following implantation of the metal-on-metal Maverick-type artificial lumbar disc (Medtronic Sofamor Danek).

PubMed

Zeh, Alexander; Planert, Michael; Siegert, Gabriele; Lattke, Peter; Held, Andreas; Hein, Werner

2007-02-01

Cross-sectional study of 10 patients to measure the serum levels of cobalt and chromium after TDA. To investigate the release of cobalt and chromium ions into the serum following implantation of the metal-on-metal Maverick-type artificial lumbar disc. In total hip endoprosthetics and consequently for TDA (total disc arthroplasty), metal-on-metal combinations are used with the aim of reducing wear debris. In metal-on-metal TDA the release of metal ions has until now been secondary to the main discussion. We investigated the serum cobalt and chromium concentration following implantation of 15 Maverick TDAs (monosegmental L5-S1, n = 5; bisegmental L4-L5 and L5-S1, n = 5; average age, 36.5 years). Five healthy subjects (no metal implants) acted as a control group. The measurements of the metals were carried out using the HITACHI Z-8200 AAS polarized Zeeman atomic absorption spectrometer after an average of 14.8 months. The concentrations of cobalt and chromium ions in the serum amounted on average to 4.75 microg/L (SD, 2.71) for cobalt and 1.10 microg/L (SD, 1.24) for chromium. Compared with control group, both the chromium and cobalt levels in the serum showed significant increases (Mann-Whitney U test, P = 0.0120). At follow-up,the Oswestry Disability Score was on average significantly decreased by 24.4 points (L5-S1) (t test, P < 0.05) and by 26.8 points (L4-S1) (t test, P < 0.05). The improved clinical situation is also represented by a significant decrease of the Visual Analog Pain Scale of 42.2 points after the follow-up (t test, P < 0.05). Significant systemic release of Cr/Co was proven in the serum compared with the control group. The concentrations of Cr/Co measured in the serum are similar in terms of their level to the values measured in THA metal-on-metal combinations or exceed these values given in the literature. Long-term implication of this metal exposure is unknown and should be studied further.

Deformation characteristics of the near-surface layers of zirconia ceramics implanted with aluminum ions

NASA Astrophysics Data System (ADS)

Ghyngazov, S. A.; Vasiliev, I. P.; Frangulyan, T. S.; Chernyavski, A. V.

2015-10-01

The effect of ion treatment on the phase composition and mechanical properties of the near-surface layers of zirconium ceramic composition 97 ZrO2-3Y2O3 (mol%) was studied. Irradiation of the samples was carried out by accelerated ions of aluminum with using vacuum-arc source Mevva 5-Ru. Ion beam had the following parameters: the energy of the accelerated ions E = 78 keV, the pulse current density Ji = 4mA / cm2, current pulse duration equal τ = 250 mcs, pulse repetition frequency f = 5 Hz. Exposure doses (fluence) were 1016 и 1017 ion/cm2. The depth distribution implanted ions was studied by SIMS method. It is shown that the maximum projected range of the implanted ions is equal to 250 nm. Near-surface layers were investigated by X-ray diffraction (XRD) at fixed glancing incidence angle. It is shown that implantation of aluminum ions into the ceramics does not lead to a change in the phase composition of the near-surface layer. The influence of implanted ions on mechanical properties of ceramic near-surface layers was studied by the method of dynamic nanoindentation using small loads on the indenter P=300 mN. It is shown that in ion- implanted ceramic layer the processes of material recovery in the deformed region in the unloading mode proceeds with higher efficiency as compared with the initial material state. The deformation characteristics of samples before and after ion treatment have been determined from interpretation of the resulting P-h curves within the loading and unloading sections by the technique proposed by Oliver and Pharr. It was found that implantation of aluminum ions in the near-surface layer of zirconia ceramics increases nanohardness and reduces the Young's modulus.

The oscillations in ESR spectra of Hg0.76Cd0.24Te implanted by Ag+ at the X and Q-bands

NASA Astrophysics Data System (ADS)

Shestakov, A. V.; Fazlizhanov, I. I.; Yatsyk, I. V.; Gilmutdinov, I. F.; Ibragimova, M. I.; Shustov, V. A.; Eremina, R. M.

2018-05-01

The objects of the investigation were uniformly Ag+ doped Hg0.76Cd0.24Te mercury chalcogenide monocrystals obtained by ion implantation with subsequent thermal annealing over 20 days. After implantation and annealing the conductivity was inverted from n-type with carrier concentration of 1016 cm‑3 to p-type with carrier concentration of ≈ 3.9 × 1015 cm‑3. The investigations of microwave absorption derivative (dP/dH) showed the existence of strong oscillations in the magnetic field for Ag:Hg0.76Cd0.24Te in the temperature range 4.2–12 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependency of oscillation amplitude. We suppose that this phenomenon is similar to the de Haas–van Alphen effect in weakly correlated electron system with imperfect nesting vector.

Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

NASA Astrophysics Data System (ADS)

Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

2016-12-01

Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (<200°C) using PECVD. However, such passivation layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

Quantitative secondary ion mass spectrometric analysis of secondary ion polarity in GaN films implanted with oxygen

NASA Astrophysics Data System (ADS)

Hashiguchi, Minako; Sakaguchi, Isao; Adachi, Yutaka; Ohashi, Naoki

2016-10-01

Quantitative analyses of N and O ions in GaN thin films implanted with oxygen ions (16O+) were conducted by secondary ion mass spectrometry (SIMS). Positive (CsM+) and negative secondary ions extracted by Cs+ primary ion bombardment were analyzed for oxygen quantitative analysis. The oxygen depth profiles were obtained using two types of primary ion beams: a Gaussian-type beam and a broad spot beam. The oxygen peak concentrations in GaN samples were from 3.2 × 1019 to 7.0 × 1021 atoms/cm3. The depth profiles show equivalent depth resolutions in the two analyses. The intensity of negative oxygen ions was approximately two orders of magnitude higher than that of positive ions. In contrast, the O/N intensity ratio measured using CsM+ molecular ions was close to the calculated atomic density ratio, indicating that the SIMS depth profiling using CsM+ ions is much more effective for the measurements of O and N ions in heavy O-implanted GaN than that using negative ions.

In-Situ RBS Channelling Studies Of Ion Implanted Semiconductors And Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wendler, E.

2011-06-01

The experimental set-up at the ion beam facility in Jena allows the performance of Rutherford backscattering spectrometry (RBS) in channeling configuration at any temperature between 15 K and room temperature without changing the environment or the temperature of the sample. Doing RBS channeling studies at 15 K increases the sensitivity to defects, because the influence of lattice vibrations is reduced. Thus, the very early processes of ion induced damage formation can be studied and the cross section of damage formation per ion in virgin material, P, can be determined. At 15 K ion-beam induced damage formation itself can be investigated,more » because the occurrence of thermal effects can be widely excluded. In AlAs, GaN, and ZnO the cross section P measured at 15 K can be used to estimate the displacement energy for the heavier component, which is in reasonable agreement with other experiments or theoretical calculations. For a given ion species (here Ar ions) the measured cross section P exhibits a quadratic dependence P{proportional_to}P{sub SRIM}{sup 2} with P{sub SRIM} being the value calculated with SRIM using established displacement energies from other sources. From these results the displacement energy of AlN can be estimated to about 40 eV. Applying the computer code DICADA to calculate the depth distribution of displaced lattice atoms from the channeling spectra, indirect information about the type of defects produced during ion implantation at 15 K can be obtained. In some materials like GaN or ZnO the results indicate the formation of extended defects most probably dislocation loops and thus suggest an athermal mobility of defect at 15 K.« less

A new method of making ohmic contacts to p-GaN

NASA Astrophysics Data System (ADS)

Hernández-Gutierrez, C. A.; Kudriavtsev, Yu.; Mota, Esteban; Hernández, A. G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V.; Casallas-Moreno, Y. L.; López-López, M.

2016-12-01

The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 × 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10-4 Ωcm2 was achieved for Au/Ni/p-InxGa1-xN/p-GaN ohmic contacts.

Ion beam sputter etching of orthopedic implanted alloy MP35N and resulting effects on fatigue

NASA Technical Reports Server (NTRS)

Wintucky, E. G.; Christopher, M.; Bahnuik, E.; Wang, S.

1981-01-01

The effects of two types of argon ion sputter etched surface structures on the tensile stress fatigue properties of orthopedic implant alloy MP35N were investigated. One surface structure was a natural texture resulting from direct bombardment by 1 keV argon ions. The other structure was a pattern of square holes milled into the surface by a 1 keV argon ion beam through a Ni screen mask. The etched surfaces were subjected to tensile stress only in fatigue tests designed to simulate the cyclic load conditions experienced by the stems of artificial hip joint implants. Both types of sputter etched surface structures were found to reduce the fatigue strength below that of smooth surface MP35N.

Infrared Photodiodes Made by Low Energy Ion Etching of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy

NASA Astrophysics Data System (ADS)

Yoo, Sung-Shik

Ion etching was used to form junctions on the p-type (111)B Hg_{1-x}Cd_ {x}Te grown by Molecular Beam Epitaxy(MBE). When Hg_{1-x}Cd_{x}Te layers are etched by Ar ions at energies ranging between 300 and 450eV, the top Hg_{1 -x}Cd_{x}Te layer is converted to n-type. The converted region is electrically characterized as a defective n^+-region near the surface, and a low doped n^--region exist below the damaged region. The total thickness of the converted n-type layer was found to be considerable. These results suggest that the creation of the n-type layer is due to the filling of mercury vacancies by mercury atoms displaced by the Ar ion irradiation on the surface. For the performance of the resulting photodiodes on MBE grown (111)B Hg_{1-x}Cd _{x}Te using this technique, the dynamic resistances at 80K are one order of magnitude less than those of junctions made on Liquid Phase Epitaxially and Bulk grown Hg_{1 -x}Cd_{x}Te. The ion etching technique was compared with ion implantation technique by fabricating diodes on the same MBE grown (111)B Hg _{1-x}Cd_{x}Te layers. The result of the comparison illustrates that ion etching technique is as good as ion implantation technique for the fabrication of Hg_{1-x}Cd _{x}Te photodiodes. Also it is believed that the performance of the diodes is limited by a relatively large density of twin defects usually found in MBE grown (111)B Hg_{1-x}Cd _{x}Te.

Emitter formation in dendritic web silicon solar cells

NASA Technical Reports Server (NTRS)

Meier, D. L.; Rohatgi, A.; Campbell, R. B.; Alexander, P.; Fonash, S. J.; Singh, R.

1984-01-01

The use of liquid dopants and liquid masks for p-n junction formation in dendritic web solar cells was investigated and found to be equivalent to the use of gaseous dopants and CVD SiO2 masks previously used. This results in a projected cost reduction of 0.02 1980$/Watt for a 25 MW/year production line, and makes possible junction formation processes having a higher throughput than more conventional processes. The effect of a low-energy (0.4 keV) hydrogen ion implant on dendritic web solar cells was also investigated. Such an implant was observed to improve Voc and Jsc substantially. Measurements of internal quantum efficiency suggest that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. The diffusion length for electrons in the p-type base increased from 53 microns to 150 microns in one case, with dendritic web cell efficiency being boosted to 15.2 percent. The mechanism by which low-energy hydrogen ions can penetrate deeply into the silicon to effect the observed improvement is not known at this time.

Corrosion in Magnesium and a Magnesium Alloy

NASA Astrophysics Data System (ADS)

Akavipat, Sanay

Magnesium and a magnesium alloy (AZ91C) have been ion implanted over a range of ions energies (50 to 150 keV) and doses (1 x 10('16) to 2 x 10('17) ions/cm('2)) to modify the corrosion properties of the metals. The corrosion tests were done by anodic polarization in chloride -free and chloride-containing aqueous solutions of a borated -boric acid with a pH of 9.3. Anodic polarization measurements showed that some implantations could greatly reduce the corrosion current densities at all impressed voltages and also increased slightly the pitting potential, which indicated the onset of the chloride attack. These improvements in corrosion resistance were caused by boron implantations into both types of samples. However, iron implantations were found to improve only the magnesium alloy. To study the corrosion in more detail, Scanning Auger Microprobe Spectrometer (SAM), Scanning Electron Microscope (SEM) with an X-ray Energy Spectrometry (XES) attachment, and Transmission Electron Microscope (TEM) measurements were used to analyze samples before, after, and at various corrosion stages. In both the unimplanted pure magnesium and AZ91C samples, anodic polarization results revealed that there were three active corrosion stages (Stages A, C, and E) and two passivating stages (Stages B and D). Examination of Stages A and B in both types of samples showed that only a mild, generalized corrosion had occurred. In Stage C of the TD samples, a pitting breakdown in the initial oxide film was observed. In Stage C of the AZ91C samples, galvanic and intergranular attack around the Mg(,17)Al(,12) intermetallic islands and along the matrix grain boundaries was observed. Stage D of both samples showed the formation of a thick, passivating oxygen containing, probably Mg(OH)(,2) film. In Stage E, this film was broken down by pits, which formed due to the presence of the chloride ions in both types of samples. Stages A through D of the unimplanted samples were not seen in the boron or iron implanted samples. Instead one low current density passivating stage was formed, which was ultimately broken down by the chloride attack. It is believed that the implantation of boron modified the initial surface film to inhibit corrosion, whereas the iron implantation modified the intermetallic (Mg(,17)Al(,12)) islands to act as sacrificial anodes.

Grain size effect on yield strength of titanium alloy implanted with aluminum ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popova, Natalya, E-mail: natalya-popova-44@mail.ru; Institute of Strength Physics and Materials Science, SB RAS, 2/4, Akademicheskii Ave., 634021, Tomsk; Nikonenko, Elena, E-mail: vilatomsk@mail.ru

2016-01-15

The paper presents a transmission electron microscopy (TEM) study of the microstructure and phase state of commercially pure titanium VT1-0 implanted by aluminum ions. This study has been carried out before and after the ion implantation for different grain size, i.e. 0.3 µm (ultra-fine grain condition), 1.5 µm (fine grain condition), and 17 µm (polycrystalline condition). This paper presents details of calculations and analysis of strength components of the yield stress. It is shown that the ion implantation results in a considerable hardening of the entire thickness of the implanted layer in the both grain types. The grain size has, however, a differentmore » effect on the yield stress. So, both before and after the ion implantation, the increase of the grain size leads to the decrease of the alloy hardening. Thus, hardening in ultra-fine and fine grain alloys increased by four times, while in polycrystalline alloy it increased by over six times.« less

Intrinsic point-defect balance in self-ion-implanted ZnO.

PubMed

Neuvonen, Pekka T; Vines, Lasse; Svensson, Bengt G; Kuznetsov, Andrej Yu

2013-01-04

The role of excess intrinsic atoms for residual point defect balance has been discriminated by implanting Zn or O ions into Li-containing ZnO and monitoring Li redistribution and electrical resistivity after postimplant anneals. Strongly Li-depleted regions were detected in the Zn-implanted samples at depths beyond the projected range (R(p)) upon annealing ≥ 600 °C, correlating with a resistivity decrease. In contrast, similar anneals of the O-implanted samples resulted in Li accumulation at R(p) and an increased resistivity. Control samples implanted with Ar or Ne ions, yielding similar defect production as for the Zn or O implants but with no surplus of intrinsic atoms, revealed no Li depletion. Thus, the depletion of Li shows evidence of excess Zn interstitials (Zn(I)) being released during annealing of the Zn-implanted samples. These Zn(I)'s convert substitutional Li atoms (Li(Zn)) into highly mobile interstitial ones leading to the strongly Li-depleted regions. In the O-implanted samples, the high resistivity provides evidence of stable O(I)-related acceptors.

Oxygen-related vacancy-type defects in ion-implanted silicon

NASA Astrophysics Data System (ADS)

Pi, X. D.; Burrows, C. P.; Coleman, P. G.; Gwilliam, R. M.; Sealy, B. J.

2003-10-01

Czochralski silicon samples implanted to a dose of 5 × 1015 cm-2 with 0.5 MeV O and to a dose of 1016 cm-2 with 1 MeV Si, respectively, have been studied by positron annihilation spectroscopy. The evolution of divacancies to vacancy (V)-O complexes is out-competed by V-interstitial (I) recombination at 400 and 500 °C in the Si- and O-implanted samples; the higher oxygen concentration makes the latter temperature higher. The defective region shrinks as the annealing temperature increases as interstitials are injected from the end of the implantation range (Rp). VmOn (m> n) are formed in the shallow region most effectively at 700 °C for both Si and O implantation. VxOy (x< y) are produced near Rp by the annealing. At 800 °C, implanted Si ions diffuse and reduce m and implanted O ions diffuse and increase n in VmOn. All oxygen-related vacancy-type defects appear to begin to dissociate at 950 °C, with the probable formation of oxygen clusters. At 1100 °C, oxygen precipitates appear to form just before Rp in O-implanted silicon.

A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

NASA Technical Reports Server (NTRS)

Lin, A. H.

1972-01-01

In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

P-type gallium nitride

DOEpatents

Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

1997-08-12

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

P-type gallium nitride

DOEpatents

Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

1997-01-01

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Optimization of single keV ion implantation for the construction of single P-donor devices

NASA Astrophysics Data System (ADS)

Yang, Changyi; Jamieson, David N.; Hopf, Toby; Andresen, Soren E.; Hearne, Sean M.; Hudson, Fay E.; Pakes, Christopher I.; Mitic, Mladen; Gauja, Eric; Tamanyan, Grigori; Dzurak, Andrew S.; Prawer, Steven; Clark, Robert G.

2005-02-01

We report recent progress in single keV ion implantation and online detection for the controlled implantation of single donors in silicon. When integrated with silicon nanofabrication technology this forms the "top down" strategy for the construction of prototype solid state quantum computer devices based on phosphorus donors in silicon. We have developed a method of single ion implantation and online registration that employs detector electrodes adjacent to the area into which the donors are to be implanted. The implantation sites are positioned with nanometer accuracy using an electron beam lithography patterned PMMA mask. Control of the implantation depth of 20 nm is achieved by tuning the phosphorus ion energy to 14 keV. The counting of single ion implantation in each site is achieved by the detection of e-/h+ pairs produced by the implanted phosphorus ion in the substrate. The system is calibrated by use of Mn K-line x-rays (5.9 and 6.4 keV) and we find the ionization energy of the 14 keV phosphorus ions in silicon to be about 3.5-4.0 keV for implants through a 5 nm SiO2 surface layer. This paper describes the development of an improved PIN detector structure that provides more reliable performance of the earlier MOS structure. With the new structure, the energy noise threshold has been minimized to 1 keV or less. Unambiguous detection/counting of single keV ion implantation events were achieved with a confidence level greater than 98% with a reliable and reproducible fabrication process.

Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

NASA Technical Reports Server (NTRS)

Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.

1997-01-01

We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

Improved yields for MOST’s using ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brockman, H. E.

1976-04-01

Conventionally diffused source and drain polysilicon gate MOST's commonly exhibit one type of fault, namely, that of polysilicon-to-diffusion short circuits. Investigations into the yields of large-area devices fabricated using ion-implanted sources and drains are compared with those of diffused structures. An improved technology for the chemical shaping of the polysilicon gates, which improves the yields for both types of devices, is also described. (AIP)

Studies of implanted iron in silicon by channeling and Rutherford backscattering

NASA Technical Reports Server (NTRS)

Wang, P. W.; Cheng, H. S.; Gibson, W. M.; Corbett, J. W.

1986-01-01

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

Study of the effects of focused high-energy boron ion implantation in diamond

NASA Astrophysics Data System (ADS)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Investigation of the stability of glass-ceramic composites containing CeTi 2 O 6 and CaZrTi 2 O 7 after ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paknahad, Elham; Grosvenor, Andrew P.

Glass-ceramic composite materials have been investigated for nuclear waste sequestration applications due to their ability to incorporate large amounts of radioactive waste elements. A key property that needs to be understood when developing nuclear waste sequestration materials is how the structure of the material responds to radioactive decay of nuclear waste elements, which can be simulated by high energy ion implantation. Borosilicate glass-ceramic composites containing brannerite-type (CeTi2O6) or zirconolite-type (CaZrTi2O7) oxides were synthesized at different annealing temperatures and investigated after being implanted with high-energy Au ions to mimic radiation induced structural damage. Backscattered electron (BSE) images were collected to investigatemore » the interaction of the brannerite crystallites with the glass matrix before and after implantation and showed that the morphology of the crystallites in the composite materials were not affected by radiation damage. Surface sensitive Ti K-edge glancing angle XANES spectra collected from the implanted composite materials showed that the structures of the CeTi2O6 and CaZrTi2O7 ceramics were damaged as a result of implantation; however, analysis of Si L2,3-edge XANES spectra indicated that the glass matrix was not affected by ion implantation.« less

Investigation of the stability of glass-ceramic composites containing CeTi2O6 and CaZrTi2O7 after ion implantation

NASA Astrophysics Data System (ADS)

Paknahad, Elham; Grosvenor, Andrew P.

2017-12-01

Glass-ceramic composite materials have been investigated for nuclear waste sequestration applications due to their ability to incorporate large amounts of radioactive waste elements. A key property that needs to be understood when developing nuclear waste sequestration materials is how the structure of the material responds to radioactive decay of nuclear waste elements, which can be simulated by high energy ion implantation. Borosilicate glass-ceramic composites containing brannerite-type (CeTi2O6) or zirconolite-type (CaZrTi2O7) oxides were synthesized at different annealing temperatures and investigated after being implanted with high-energy Au ions to mimic radiation induced structural damage. Backscattered electron (BSE) images were collected to investigate the interaction of the brannerite crystallites with the glass matrix before and after implantation and showed that the morphology of the crystallites in the composite materials were not affected by radiation damage. Surface sensitive Ti K-edge glancing angle XANES spectra collected from the implanted composite materials showed that the structures of the CeTi2O6 and CaZrTi2O7 ceramics were damaged as a result of implantation; however, analysis of Si L2,3-edge XANES spectra indicated that the glass matrix was not affected by ion implantation.

The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC

NASA Astrophysics Data System (ADS)

Peng, B.; Zhang, Y. M.; Dong, L. P.; Wang, Y. T.; Jia, R. X.

2017-04-01

The structural properties and the spin states of vacancies in ion implanted silicon carbide samples are analyzed by experimental measurements along with first-principles calculations. Different types and dosages of ions (N+, O+, and B+) were implanted in the 4H-silicon carbide single crystal. The Raman spectra, positron annihilation spectroscopy, and magnetization-magnetic field curves of the implanted samples were measured. The fitting results of magnetization-magnetic field curves reveal that samples implanted with 1 × 1016 cm-2 N+ and O+ ions generate paramagnetic centers with various spin states of J = 1 and J = 0.7, respectively. While for other implanted specimens, the spin states of the paramagnetic centers remain unchanged compared with the pristine sample. According to the positron annihilation spectroscopy and first-principles calculations, the change in spin states originates from the silicon vacancy carrying a magnetic moment of 3.0 μB in the high dosage N-implanted system and 2.0 μB in the O-doped system. In addition, the ratio of the concentration of implanted N ions and silicon vacancies will affect the magnetic moment of VSi. The formation of carbon vacancy which does not carry a local magnetic moment in B-implanted SiC can explain the invariability in the spin states of the paramagnetic centers. These results will help to understand the magnetic moments of vacancies in ion implanted 4H-SiC and provide a possible routine to induce vacancies with high spin states in SiC for the application in quantum technologies and spintronics.

Nanoscale fabrication using single-ion impacts

NASA Astrophysics Data System (ADS)

Millar, Victoria; Pakes, Chris I.; Cimmino, Alberto; Brett, David; Jamieson, David N.; Prawer, Steven D.; Yang, Changyi; Rout, Bidhudutta; McKinnon, Rita P.; Dzurak, Andrew S.; Clark, Robert G.

2001-11-01

We describe a novel technique for the fabrication of nanoscale structures, based on the development of localized chemical modification caused in a PMMA resist by the implantation of single ions. The implantation of 2 MeV He ions through a thin layer of PMMA into an underlying silicon substrate causes latent damage in the resist. On development of the resist we demonstrate the formation within the PMMA layer of clearly defined etched holes, of typical diameter 30 nm, observed using an atomic force microscope employing a carbon nanotube SPM probe in intermittent-contact mode. This technique has significant potential applications. Used purely to register the passage of an ion, it may be a useful verification of the impact sites in an ion-beam modification process operating at the single-ion level. Furthermore, making use of the hole in the PMMA layer to perform subsequent fabrication steps, it may be applied to the fabrication of self-aligned structures in which surface features are fabricated directly above regions of an underlying substrate that are locally doped by the implanted ion. Our primary interest in single-ion resists relates to the development of a solid-state quantum computer based on an array of 31P atoms (which act as qubits) embedded with nanoscale precision in a silicon matrix. One proposal for the fabrication of such an array is by phosphorous-ion implantation. A single-ion resist would permit an accurate verification of 31P implantation sites. Subsequent metalisation of the latent damage may allow the fabrication of self-aligned metal gates above buried phosphorous atoms.

Hybrid Donor-Dot Devices made using Top-down Ion Implantation for Quantum Computing

NASA Astrophysics Data System (ADS)

Bielejec, Edward; Bishop, Nathan; Carroll, Malcolm

2012-02-01

We present progress towards fabricating hybrid donor -- quantum dots (QD) for quantum computing. These devices will exploit the long coherence time of the donor system and the surface state manipulation associated with a QD. Fabrication requires detection of single ions implanted with 10's of nanometer precision. We show in this talk, 100% detection efficiency for single ions using a single ion Geiger mode avalanche (SIGMA) detector integrated into a Si MOS QD process flow. The NanoImplanter (nI) a focused ion beam system is used for precision top-down placement of the implanted ion. This machine has a 10 nm resolution combined with a mass velocity filter, allowing for the use of multi-species liquid metal ion sources (LMIS) to implant P and Sb ions, and a fast blanking and chopping system for single ion implants. The combination of the nI and integration of the SIGMA with the MOS QD process flow establishes a path to fabricate hybrid single donor-dot devices. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

A new tritium monitor design based on plasma source ion implantation technique

NASA Astrophysics Data System (ADS)

Nassar, Rafat Mohammad

Tritium is an important isotope of hydrogen. The availability of tritium in our environment is manifest through both natural and artificial sources. Consequently, the requirement for tritium handling and usage will continue to increase in the future. An important future contributor is nuclear fusion power plants and facilities. Essential safety regulations and procedures require effective monitoring and measurements of tritium concentrations in workplaces. The unique characteristics of tritium impose an important role on the criteria for its detection and measurement. As tritium decays by the emission of soft beta particles, maximum 18 keV, it cannot be readily detected by commonly used detectors. Specially built monitors are required. Additional complications occur due to the presence of other radioactive isotopes or ambient radiation fields and because of the high diffusivity of tritium. When it is in oxidized form it is 25000 times more hazardous biologically than when in elemental form. Therefore, contamination of the monitor is expected and compound specific monitors are important. A summary is given of the various well known methods of detecting tritium-in-air. This covers the direct as well as the indirect measuring techniques, although each has been continually improved and further developed, nevertheless, each has its own limitations. Ionization chambers cannot discriminate against airborne P emitters. Proportional counters have a narrow operating range, 3-4 decades, and have poor performance in relatively high humid environments and require a dry counting gas. Liquid scintillation counters are sensitive, but inspection of the sample is slow and they produce chemical liquid waste. A new way to improve the sensitivity of detecting tritium with plastic scintillators has been developed. The technique is based on a non-line-of-sight implantation of tritium ions into a 20 mum plastic scintillator using a plasma source ion implantation (PSII) technique, This type of source is different, superior to the line-of-sight implantation and requires no additional beam handling. It is capable of implanting ion species in a broad beam configuration into the entire surface of a target. The technique requires a special ion source with special characteristics of the type obtained from a surfatron plasma source. This ion source has a large high ion density plasma with minimum contamination and produces ions of low temperature. It was constructed to ionize the sampled air and to produce a plasma over a wide range of pressure, 4-0.1 mTorr. A plasma source ion implantation cell was designed and constructed using mathematical modeling with personal computer, to optimize the essential variables of the design and to estimate the implantation rate under different operation conditions. Also, a high voltage pulse modulator was designed and constructed to produce a series of 10 musec pulses (up to 2 MHz) with a maximum magnitude of -60 kV. The developed device was capable of ionizing air samples and implanting the resulting ions into a plastic scintillator. Two different methods to enhance the collection and deposition of the tritium ions, have been proposed and assessed. A movable prototype device for monitoring environmental tritium in air has been designed and constructed. Although this prototype was not fully tested, the primary calculations have shown that measurable concentrations of tritium ions can be collected from an air sample, with tritium activity ranging from 0.3 Bq/cm3 down to 0.03 mBq/cm3, in a short time, to the order of seconds, on-line. This sensitivity fulfills the requirement for environmental monitoring.

Influence of a fluoridated medium with different pHs on commercially pure titanium-based implants.

PubMed

Sartori, Rafael; Correa, Cassia Bellotto; Marcantonio, Elcio; Vaz, Luis Geraldo

2009-02-01

The objective of this study was to assess the influence of a fluoride medium with different pHs on the corrosion resistance of three commercially pure titanium-based dental implant commercial brands, under scanning electron microscopy (SEM) and EDS. Forty-two dental implants, from three commercial brands, were used. Five years of regular use of mouth rinsing, with NaF 1500 ppm content and two different pHs, were simulated by immersing the specimens into that medium for 184 hours. SEM and EDS analyses demonstrated no evidence of corrosion on the specimens' surfaces after being submitted to fluoride ions or incorporation of fluoride ions to the set surface. It was possible to conclude that both the fluoride concentration and the pH of the solutions did not exert any influence upon implant corrosion resistance.

Appareillage automatisé de mesure simultanée du pouvoir thermoélectrique et de la conductivité électrique. Application à l'étude de couches polymères semi-conductrices

NASA Astrophysics Data System (ADS)

Moliton, A.; Ratier, B.; Moreau, C.; Froyer, G.

1991-05-01

In this paper, we present an automatized system for simultaneous measurement of conductivity σ, and thermoelectric power S : measurements are allowed for temperatures ranging from 130 K to 360 K on brittle semiconductor layers. As an example of the application, results obtained in the case of polymer (PPP) layers implanted with Na ions are presented : with high energy implantation (E = 250 keV) we observe only a defect semiconduction of p type while at low energy (30 keV) an electronic n type conduction appears. Nous présentons dans cet article un système de mesure simultanée de la conductivité σ, et du pouvoir thermoélectrique S : il permet des mesures en fonction de la température (entre 130 K et 360 K) dans le cas de couches semi-conductrices relativement fragiles. A titre d'application, nous indiquons les résultats que nous avons obtenus dans le cas de couches polymères (PPP) implantées avec des ions sodium: alors que seule une semi-conduction par défaut est générée par de fortes énergies d'implantation (E = 250 keV ), il apparaît une semiconduction induite par le dopage n lors d'implantations à basse énergie (E = 30 keV ).

Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Shtel’makh, K. F.; Kalyadin, A. E.

2015-12-15

Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon atoms, H and P centers containing oxygen atoms, and Er centers containing Er{sup 3+} ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for X and H centers. In the case of P and Er centers, the values of the energies practically coincide with previously published data.more » For W centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.« less

The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

NASA Astrophysics Data System (ADS)

Kabyshev, A. V.; Konusov, F. V.; Pavlov, S. K.; Remnev, G. E.

2016-02-01

The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.

Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

NASA Astrophysics Data System (ADS)

Liang, Qiuxia; Huang, Qunce; Cao, Gangqiang; Ying, Fangqing; Liu, Yanbo; Huang, Wen

2008-04-01

Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on "the shape of saddle", but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7 × 1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to M7. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5 × 1017 nitrogen ions/cm2, and the weight of succulent root and the volume of growth were over twice the control's. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables' genetic improvement.

Improved depth profiling with slow positrons of ion implantation-induced damage in silicon

NASA Astrophysics Data System (ADS)

Fujinami, M.; Miyagoe, T.; Sawada, T.; Akahane, T.

2003-10-01

Variable-energy positron annihilation spectroscopy (VEPAS) has been extensively applied to study defects in near-surface regions and buried interfaces, but there is an inherent limit for depth resolution due to broadening of the positron implantation profile. In order to overcome this limit and obtain optimum depth resolution, iterative chemical etching of the sample surface and VEPAS measurement are employed. This etch-and-measure technique is described in detail and the capabilities are illustrated by investigating the depth profile of defects in Si after B and P implantations with 2×1014/cm2 at 100 keV followed by annealing. Defect tails can be accurately examined and the extracted defect profile is proven to extend beyond the implanted ion range predicted by the Monte Carlo code TRIM. This behavior is more remarkable for P ion implantation than B, and the mass difference of the implanted ions is strongly related to it. No significant difference is recognized in the annealing behavior between B and P implantations. After annealing at 300 °C, the defect profile is hardly changed, but the ratio of the characteristic Doppler broadening, S, a parameter for defects, to that for the bulk Si rises by 0.01, indicating that divacancies, V2, are transformed into V4. Annealing at more than 500 °C causes diffusion of the defects toward the surface and positron traps are annealed out at 800 °C. It is proved that this resolution-enhanced VEPAS can eliminate some discrepancies in defect profiles extracted by conventional means.

The Use of Ion Implantation for Materials Processing.

DTIC Science & Technology

1986-03-06

34 ASME, J. Lub. Technology 105, pp. 534-541 (1983). 89. J. M. Lambert, P. A. Treado, D . Trbojevic , R. G. Allas, A. R. Knudson, G. W. Reynolds, and F. R...Singer and R.G. Vardiman D . In Situ Auger Analysis Of Surface Composition During High Fluence Ion Implantation...Niobium Implantation Of Iron Films ..............................................37 B. D . Sartwell and D.A. Baldwin F. Sputtering And Migration During Ta

Reduction of Tribocorrosion Products When using the Platform-Switching Concept.

PubMed

Alrabeah, G O; Knowles, J C; Petridis, H

2018-03-01

The reduced marginal bone loss observed when using the platform-switching concept may be the result of reduced amounts of tribocorrosion products released to the peri-implant tissues. Therefore, the purpose of this study was to compare the tribocorrosion product release from various platform-matched and platform-switched implant-abutment couplings under cyclic loading. Forty-eight titanium implants were coupled with pure titanium, gold alloy, cobalt-chrome alloy, and zirconia abutments forming either platform-switched or platform-matched groups ( n = 6). The specimens were subjected to cyclic occlusal forces in a wet acidic environment for 24 h followed by static aqueous immersion for 6 d. The amount of metal ions released was measured using inductively coupled plasma mass spectrometry. Microscopic evaluations were performed pre- and postimmersion under scanning electron microscope (SEM) equipped with energy-dispersive spectroscopy X-ray for corrosion assessment at the interface and wear particle characterization. All platform-switched groups showed less metal ion release compared with their platform-matched counterparts within each abutment material group ( P < 0.001). Implants connected to platform-matched cobalt-chrome abutments demonstrated the highest total mean metal ion release (218 ppb), while the least total mean ion release (11 ppb) was observed in the implants connected to platform-switched titanium abutments ( P ≤ 0.001). Titanium was released from all test groups, with its highest mean release (108 ppb) observed in the implants connected to platform-matched gold abutments ( P < 0.001). SEM images showed surface tribocorrosion features such as pitting and bands of fretting scars. Wear particles were mostly titanium, ranging from submicron to 48 µm in length. The platform-matched groups demonstrated a higher amount of metal ion release and more surface damage. These findings highlight the positive effect of the platform-switching concept in the reduction of tribocorrosion products released from dental implants, which consequently may minimize the adverse tissue reactions that lead to peri-implant bone loss.

Origin of magnetic properties in carbon implanted ZnO nanowires.

PubMed

Wang, Y F; Shao, Y C; Hsieh, S H; Chang, Y K; Yeh, P H; Hsueh, H C; Chiou, J W; Wang, H T; Ray, S C; Tsai, H M; Pao, C W; Chen, C H; Lin, H J; Lee, J F; Wu, C T; Wu, J J; Chang, Y M; Asokan, K; Chae, K H; Ohigashi, T; Takagi, Y; Yokoyama, T; Kosugi, N; Pong, W F

2018-05-17

Various synchrotron radiation-based spectroscopic and microscopic techniques are used to elucidate the room-temperature ferromagnetism of carbon-doped ZnO-nanowires (ZnO-C:NW) via a mild C + ion implantation method. The photoluminescence and magnetic hysteresis loops reveal that the implantation of C reduces the number of intrinsic surface defects and increases the saturated magnetization of ZnO-NW. The interstitial implanted C ions constitute the majority of defects in ZnO-C:NW as confirmed by the X-ray absorption spectroscopic studies. The X-ray magnetic circular dichroism spectra of O and C K-edge respectively indicate there is a reduction in the number of unpaired/dangling O 2p bonds in the surface region of ZnO-C:NW and the C 2p-derived states of the implanted C ions strongly affect the net spin polarization in the surface and bulk regions of ZnO-C:NW. Furthermore, these findings corroborate well with the first-principles calculations of C-implanted ZnO in surface and bulk regions, which highlight the stability of implanted C for the suppression and enhancement of the ferromagnetism of the ZnO-C:NW in the surface region and bulk phase, respectively.

Maximization of DRAM yield by control of surface charge and particle addition during high dose implantation

NASA Astrophysics Data System (ADS)

Horvath, J.; Moffatt, S.

1991-04-01

Ion implantation processing exposes semiconductor devices to an energetic ion beam in order to deposit dopant ions in shallow layers. In addition to this primary process, foreign materials are deposited as particles and surface films. The deposition of particles is a major cause of IC yield loss and becomes even more significant as device dimensions are decreased. Control of particle addition in a high-volume production environment requires procedures to limit beamline and endstation sources, control of particle transport, cleaning procedures and a well grounded preventative maintenance philosophy. Control of surface charge by optimization of the ion beam and electron shower conditions and measurement with a real-time charge sensor has been effective in improving the yield of NMOS and CMOS DRAMs. Control of surface voltages to a range between 0 and -20 V was correlated with good implant yield with PI9200 implanters for p + and n + source-drain implants.

Mechanical properties of ion-beam-textured surgical implant alloys

NASA Technical Reports Server (NTRS)

Weigand, A. J.

1977-01-01

An electron-bombardment Hg ion thruster was used as an ion source to texture surfaces of materials used to make orthopedic and/or dental prostheses or implants. The materials textured include 316 stainless steel, titanium-6% aluminum, 4% vanadium, and cobalt-20% chromium, 15% tungsten. To determine the effect of ion texturing on the ultimate strength and yield strength, stainless steel and Co-Cr-W alloy samples were tensile tested to failure. Three types of samples of both materials were tested. One type was ion-textured (the process also heats each sample to 300 C), another type was simply heated to 300 C in an oven, and the third type was untreated. Stress-strain diagrams, 0.2% offset yield strength data, total elongation data, and area reduction data are presented. Fatigue specimens of ion textured and untextured 316 stainless steel and Ti-6% Al-4% V were tested. Included as an ion textured sample is a Ti-6% Al-4% V sample which was ion machined by means of Ni screen mask so as to produce an array of 140 mu m x 140 mu m x 60 mu m deep pits. Scanning electron microscopy was used to characterize the ion textured surfaces.

Polyatomic ions from a high current ion implanter driven by a liquid metal ion source.

PubMed

Pilz, W; Laufer, P; Tajmar, M; Böttger, R; Bischoff, L

2017-12-01

High current liquid metal ion sources are well known and found their first application as field emission electric propulsion thrusters in space technology. The aim of this work is the adaption of such kind of sources in broad ion beam technology. Surface patterning based on self-organized nano-structures on, e.g., semiconductor materials formed by heavy mono- or polyatomic ion irradiation from liquid metal (alloy) ion sources (LMAISs) is a very promising technique. LMAISs are nearly the only type of sources delivering polyatomic ions from about half of the periodic table elements. To overcome the lack of only very small treated areas by applying a focused ion beam equipped with such sources, the technology taken from space propulsion systems was transferred into a large single-end ion implanter. The main component is an ion beam injector based on high current LMAISs combined with suited ion optics allocating ion currents in the μA range in a nearly parallel beam of a few mm in diameter. Different types of LMAIS (needle, porous emitter, and capillary) are presented and characterized. The ion beam injector design is specified as well as the implementation of this module into a 200 kV high current ion implanter operating at the HZDR Ion Beam Center. Finally, the obtained results of large area surface modification of Ge using polyatomic Bi 2 + ions at room temperature from a GaBi capillary LMAIS will be presented and discussed.

Polyatomic ions from a high current ion implanter driven by a liquid metal ion source

NASA Astrophysics Data System (ADS)

Pilz, W.; Laufer, P.; Tajmar, M.; Böttger, R.; Bischoff, L.

2017-12-01

High current liquid metal ion sources are well known and found their first application as field emission electric propulsion thrusters in space technology. The aim of this work is the adaption of such kind of sources in broad ion beam technology. Surface patterning based on self-organized nano-structures on, e.g., semiconductor materials formed by heavy mono- or polyatomic ion irradiation from liquid metal (alloy) ion sources (LMAISs) is a very promising technique. LMAISs are nearly the only type of sources delivering polyatomic ions from about half of the periodic table elements. To overcome the lack of only very small treated areas by applying a focused ion beam equipped with such sources, the technology taken from space propulsion systems was transferred into a large single-end ion implanter. The main component is an ion beam injector based on high current LMAISs combined with suited ion optics allocating ion currents in the μA range in a nearly parallel beam of a few mm in diameter. Different types of LMAIS (needle, porous emitter, and capillary) are presented and characterized. The ion beam injector design is specified as well as the implementation of this module into a 200 kV high current ion implanter operating at the HZDR Ion Beam Center. Finally, the obtained results of large area surface modification of Ge using polyatomic Bi2+ ions at room temperature from a GaBi capillary LMAIS will be presented and discussed.

Ion implantation modified stainless steel as a substrate for hydroxyapatite deposition. Part II. Biomimetic layer growth and characterization.

PubMed

Pramatarova, L; Pecheva, E; Krastev, V

2007-03-01

The interest in stainless steel as a material widely used in medicine and dentistry has stimulated extensive studies on improving its bone-bonding properties. AISI 316 stainless steel is modified by a sequential ion implantation of Ca and P ions (the basic ions of hydroxyapatite), and by Ca and P implantation and subsequent thermal treatment in air (600( composite function)C, 1 h). This paper investigates the ability of the as-modified surfaces to induce hydroxyapatite deposition by using a biomimetic approach, i.e. immersion in a supersaturated aqueous solution resembling the human blood plasma (the so-called simulated body fluid). We describe our experimental procedure and results, and discuss the physico-chemical properties of the deposed hydroxyapatite on the modified stainless steel surfaces. It is shown that the implantation of a selected combination of ions followed by the applied methodology of the sample soaking in the simulated body fluid yield the growth of hydroxyapatite layers with composition and structure resembling those of the bone apatite. The grown layers are found suitable for studying the process of mineral formation in nature (biomineralization).

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Down to 2 nm Ultra Shallow Junctions : Fabrication by IBS Plasma Immersion Ion Implantation Prototype PULSION registered

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Mathieu, Gilles

Classical beam line implantation is limited in low energies and cannot achieve P+/N junctions requirements for <45nm node. Compared to conventional beam line ion implantation, limited to a minimum of about 200 eV, the efficiency of Plasma Immersion Ion Implantation (PIII) is no more to prove for the realization of Ultra Shallow Junctions (USJ) in semiconductor applications: this technique allows to get ultimate shallow profiles (as implanted) thanks to no lower limitation of energy and offers high dose rate. In the field of the European consortium NANOCMOS, Ultra Shallow Junctions implanted on a semi-industrial PIII prototype (PULSION registered ) designedmore » by the French company IBS, have been studied. Ultra shallow junctions implanted with BF3 at acceleration voltages down to 20V were realized. Contamination level, homogeneity and depth profile are studied. The SIMS profiles obtained show the capability to make ultra shallow profiles (as implanted) down to 2nm.« less

Lattice disorder produced in GaN by He-ion implantation

NASA Astrophysics Data System (ADS)

Han, Yi; Peng, Jinxin; Li, Bingsheng; Wang, Zhiguang; Wei, Kongfang; Shen, Tielong; Sun, Jianrong; Zhang, Limin; Yao, Cunfeng; Gao, Ning; Gao, Xing; Pang, Lilong; Zhu, Yabin; Chang, Hailong; Cui, Minghuan; Luo, Peng; Sheng, Yanbin; Zhang, Hongpeng; Zhang, Li; Fang, Xuesong; Zhao, Sixiang; Jin, Jin; Huang, Yuxuan; Liu, Chao; Tai, Pengfei; Wang, Dong; He, Wenhao

2017-09-01

The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 × 1016, 5 × 1016 and 1 × 1017 cm-2 at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed.

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to mapmore » out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.« less

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

NASA Astrophysics Data System (ADS)

Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

2018-06-01

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well

NASA Astrophysics Data System (ADS)

Seok, Ogyun; Ha, Min-Woo; Kang, In Ho; Kim, Hyoung Woo; Kim, Dong Young; Bahng, Wook

2018-06-01

The effects of a trench profile and self-aligned ion implantation on the electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs employing a bottom protection p-well (BPW) were investigated to improve blocking capability by simulation studies. The trench profile and thickness of a SiO2 spacer during self-aligned ion implantation for BPW affect electrons flow through a trench gate as well as E-field concentration at the gate insulator on a trench bottom. At trench angle higher than 84° and a SiO2 spacer thicker than 0.2 µm showed that the Al concentration penetrated into the trench sidewall during ion implantation is less than 0.3% in comparison with the background doping concentration in a drift region. Under the optimum conditions with a trench angle of 90° and 0.2-µm-thick SiO2 spacer, a high breakdown voltage of 1.45 kV with a low E-field peak in the gate insulator was achieved.

CoCr wear particles generated from CoCr alloy metal-on-metal hip replacements, and cobalt ions stimulate apoptosis and expression of general toxicology-related genes in monocyte-like U937 cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posada, Olga M., E-mail: O.M.PosadaEstefan@leeds.ac.uk; Gilmour, Denise; Tate, Rothwelle J., E-mail: r.j.tate@strath.ac.uk

Cobalt-chromium (CoCr) particles in the nanometre size range and their concomitant release of Co and Cr ions into the patients' circulation are produced by wear at the articulating surfaces of metal-on-metal (MoM) implants. This process is associated with inflammation, bone loss and implant loosening and led to the withdrawal from the market of the DePuy ASR™ MoM hip replacements in 2010. Ions released from CoCr particles derived from a resurfacing implant in vitro and their subsequent cellular up-take were measured by ICP-MS. Moreover, the ability of such metal debris and Co ions to induce both apoptosis was evaluated with bothmore » FACS and immunoblotting. qRT-PCR was used to assess the effects on the expression of lymphotoxin alpha (LTA), BCL2-associated athanogene (BAG1), nitric oxide synthase 2 inducible (NOS2), FBJ murine osteosarcoma viral oncogene homolog (FOS), growth arrest and DNA-damage-inducible alpha (GADD45A). ICP-MS showed that the wear debris released significant (p < 0.05) amounts of Co and Cr ions into the culture medium, and significant (p < 0.05) cellular uptake of both ions. There was also an increase (p < 0.05) in apoptosis after a 48 h exposure to wear debris. Analysis of qRT-PCR results found significant up-regulation (p < 0.05) particularly of NOS2 and BAG1 in Co pre-treated cells which were subsequently exposed to Co ions + debris. Metal debris was more effective as an inducer of apoptosis and gene expression when cells had been pre-treated with Co ions. This suggests that if a patient receives sequential bilateral CoCr implants, the second implant may be more likely to produce adverse effects than the first one. - Highlights: • Effects of CoCr nanoparticles and Co ions on U937 cells were investigated. • Ions released from wear debris play an important role in cellular response, • Toxicity of Co ions could be related to NO metabolic processes and apoptosis. • CoCr particles were a more effective inducer of apoptosis after cell priming. • CoCr particles were a more effective inducer of gene expression after cell priming.« less

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

NASA Astrophysics Data System (ADS)

Matthus, Christian D.; Huerner, Andreas; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

2018-06-01

In this study, the influence of the emitter efficiency on the forward current-voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.

Comparison of metal ion concentrations and implant survival after total hip arthroplasty with metal-on-metal versus metal-on-polyethylene articulations

PubMed Central

Dahlstrand, Henrik; Stark, André; Wick, Marius C; Anissian, Lucas; Hailer, Nils P; Weiss, Rüdiger J

2017-01-01

Background and purpose Large metal-on-metal (MoM) articulations are associated with metal wear and corrosion, leading to increased metal ion concentrations and unacceptable revision rates. There are few comparative studies of 28-mm MoM articulations with conventional metal-on-polyethylene (MoP) couplings. We present a long-term follow-up of a randomized controlled trial comparing MoM versus MoP 28-mm articulations, focused on metal ions and implant survival. Patients and methods 85 patients with a mean age of 65 years at surgery were randomized to a MoM (Metasul) or a MoP (Protasul) bearing. After 16 years, 38 patients had died and 4 had undergone revision surgery. 13 patients were unavailable for clinical follow-up, leaving 30 patients (n = 14 MoM and n = 16 MoP) for analysis of metal ion concentrations and clinical outcome. Results 15-year implant survival was similar in both groups (MoM 96% [95% CI 88–100] versus MoP 97% [95% CI 91–100]). The mean serum cobalt concentration was 4-fold higher in the MoM (1.5 μg/L) compared with the MoP cohort (0.4 μg/L, p < 0.001) and the mean chromium concentration was double in the MoM (2.2 μg/L) compared with the MoP cohort (1.0 μg/L, p = 0.05). Mean creatinine levels were similar in both groups (MoM 93 μmol/L versus MoP 92 μmol/L). Harris hip scores differed only marginally between the MoM and MoP cohorts. Interpretation This is the longest follow-up of a randomized trial on 28-mm MoM articulations, and although implant survival in the 2 groups was similar, metal ion concentrations remained elevated in the MoM cohort even in the long term. PMID:28699417

Characterization of Boron Contamination in Fluorine Implantation using Boron Trifluoride as a Source Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmeide, Matthias; Kondratenko, Serguei

2011-01-07

Fluorine implantation process purity was considered on different types of high current implanters. It was found that implanters equipped with an indirectly heated cathode ion source show an enhanced deep boron contamination compared to a high current implanter using a cold RF-driven multicusp ion source when boron trifluoride is used for fluorine implantations. This contamination is directly related to the source technology and thus, should be considered potentially for any implanter design using hot cathode/hot filament ion source, independently of the manufacturer.The boron contamination results from the generation of double charged boron ions in the arc chamber and the subsequentmore » charge exchange reaction to single charged boron ions taking place between the arc chamber and the extraction electrode. The generation of the double charged boron ions depends mostly on the source parameters, whereas the pressure in the region between the arc chamber and the extraction electrode is mostly responsible for the charge exchange from double charged to single charged ions. The apparent mass covers a wide range, starting at mass 11. A portion of boron ions with energies of (19/11) times higher than fluorine energy has the same magnetic rigidity as fluorine beam and cannot be separated by the analyzer magnet. The earlier described charge exchange effects between the extraction electrode and the entrance to the analyzer magnet, however, generates boron beam with a higher magnetic rigidity compared to fluorine beam and cannot cause boron contamination after mass-separation.The energetic boron contamination was studied as a function of the ion source parameters, such as gas flow, arc voltage, and source magnet settings, as well as analyzing magnet aperture resolution. This allows process optimization reducing boron contamination to the level acceptable for device performance.« less

Transition Metal Doped ZnO for Spintronics

DTIC Science & Technology

2007-07-01

TM-doped material, including understanding the role of deep level co- dopants in mediating ferromagnetism. Experiments will focus on correlating...magnetic properties (Curie temperature, moment/TM dopant ) with the TM and deep level dopant concentrations. Epitaxial film growth and ion implantation of...With Cobalt ," Florida Chapter American Vacuum Society Meeting, Orlando, FL, March 2007 3. "Carrier Type Conversion In Post Annealed ZnO:P Thin Films

Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

2014-12-01

Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

Monolithic high voltage nonlinear transmission line fabrication process

DOEpatents

Cooper, Gregory A.

1994-01-01

A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

Above room temperature ferromagnetism in Si:Mn and TiO(2-delta)Co.

PubMed

Granovsky, A; Orlov, A; Perov, N; Gan'shina, E; Semisalova, A; Balagurov, L; Kulemanov, I; Sapelkin, A; Rogalev, A; Smekhova, A

2012-09-01

We present recent experimental results on the structural, electrical, magnetic, and magneto-optical properties of Mn-implanted Si and Co-doped TiO(2-delta) magnetic oxides. Si wafers, both n- and p-type, with high and low resistivity, were used as the starting materials for implantation with Mn ions at the fluencies up to 5 x 10(16) cm(-2). The saturation magnetization was found to show the lack of any regular dependence on the Si conductivity type, type of impurity and the short post-implantation annealing. According to XMCD Mn impurity in Si does not bear any appreciable magnetic moment at room temperature. The obtained results indicate that above room temperature ferromagnetism in Mn-implanted Si originates not from Mn impurity but rather from structural defects in Si. The TiO(2-delta):Co thin films were deposited on LaAlO3 (001) substrates by magnetron sputtering in the argon-oxygen atmosphere at oxygen partial pressure of 2 x 10(-6)-2 x 10(-4) Torr. The obtained transverse Kerr effect spectra at the visible and XMCD spectra indicate on intrinsic room temperature ferromagnetism in TiO(2-delta):Co thin films at low (< 1%) volume fraction of Co.

Complete p-type activation in vertical-gradient freeze GaAs co-implanted with gallium and carbon

NASA Astrophysics Data System (ADS)

Horng, S. T.; Goorsky, M. S.

1996-03-01

High-resolution triple-axis x-ray diffractometry and Hall-effect measurements were used to characterize damage evolution and electrical activation in gallium arsenide co-implanted with gallium and carbon ions. Complete p-type activation of GaAs co-implanted with 5×1014 Ga cm-2 and 5×1014 C cm-2 was achieved after rapid thermal annealing at 1100 °C for 10 s. X-ray diffuse scattering was found to increase after rapid thermal annealing at 600-900 °C due to the aggregation of implantation-induced point defects. In this annealing range, there was ˜10%-72% activation. After annealing at higher annealing temperatures, the diffuse scattered intensity decreased drastically; samples that had been annealed at 1000 °C (80% activated) and 1100 °C (˜100% activated) exhibited reciprocal space maps that were indicative of high crystallinity. The hole mobility was about 60 cm2/V s for all samples annealed at 800 °C and above, indicating that the crystal perfection influences dopant activation more strongly than it influences mobility. Since the high-temperature annealing simultaneously increases dopant activation and reduces x-ray diffuse scattering, we conclude that point defect complexes which form at lower annealing temperatures are responsible for both the diffuse scatter and the reduced activation.

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

NASA Astrophysics Data System (ADS)

Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

2018-04-01

Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

Doping of two-dimensional MoS2 by high energy ion implantation

NASA Astrophysics Data System (ADS)

Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

2017-12-01

Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

NASA Astrophysics Data System (ADS)

Akazawa, Masamichi; Yokota, Naoshige; Uetake, Kei

2018-02-01

We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions were implanted at 50 keV with a small dosage of 1.5×1011 cm-2, which did not change the conduction type of the n-GaN. By depositing Al2O3 and a Ni/Au electrode onto the implanted n-GaN, metal-oxide-semiconductor (MOS) diodes were fabricated and tested. The measured capacitance-voltage (C-V) characteristics showed a particular behavior with a plateau region and a region with an anomalously steep slope. Fitting to the experimental C-V curves by simulation showed the existence of deep-level defects and a reduction of the carrier concentration near the GaN surface. By annealing at 800oC, the density of the deep-level defects was reduced and the carrier concentration partially recovered.

Cathodoluminescence Characterization of Ion Implanted GaAs.

DTIC Science & Technology

1980-03-01

technique that can be used to characterize the semiconductor device "in situ" before further processing can save the Air Force valuable time as well...Patterson Air Force Base,Ohio i! i ill i I ;Wow AFIT/DS/PH/80- I.i1I LEVELOO CATHODOLUMINESCENCE CHARACTERIZATION OF ION IPLANTED GaAs D I SSERUrAT ION...CATODOLUMINESCENCE CHARACTERIZATION .’ a .... OF ION IMPLANTED GaAs’ - .. .. Dtriy’ t’ c:’/ A’: t 1. - Cc;-,P by an i’or Milton L one B.S., M.S. Major USAF Approved

Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Hugh; Todorov, Stan; Colombeau, Benjamin

2012-11-06

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less

Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, William, E-mail: william.hsu@utexas.edu; Kim, Taegon; Chou, Harry

2016-07-07

Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B{sup +} implantation, the use of the heavier BF{sub 2}{sup +} ions or even BF{sup +} is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B{sup +}, BF{sup +}, and BF{sub 2}{sup +} implants in crystalline and pre-amorphized Ge, employing rapid thermal annealingmore » at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF{sup +}, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p{sup +}/n junctions formed by BF{sup +} implantation was evaluated.« less

Selective high-resolution electrodeposition on semiconductor defect patterns.

PubMed

Schmuki, P; Erickson, L E

2000-10-02

We report a new principle and technique that allows one to electrodeposit material patterns of arbitrary shape down to the submicrometer scale. We demonstrate that an electrochemical metal deposition reaction can be initiated selectively at surface defects created in a p-type Si(100) substrate by Si (++) focused ion beam bombardment. The key principle is that, for cathodic electrochemical polarization of p-type material in the dark, breakdown of the blocking Schottky barrier at the semiconductor/electrolyte interface occurs at significantly lower voltages at implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve selective electrochemical deposition.

Time-dependent release of cobalt and chromium ions into the serum following implantation of the metal-on-metal Maverick type artificial lumbar disc (Medtronic Sofamor Danek).

PubMed

Zeh, Alexander; Becker, Claudia; Planert, Michael; Lattke, Peter; Wohlrab, David

2009-06-01

In total hip endoprosthetics and consequently for TDA, metal-on-metal combinations are used with the aim of reducing wear debris. In metal-on-metal TDA the release of metal ions has until now been secondary to the main discussion. In order to investigate the ion release following the implantation of the metal-on-metal Maverick type artificial lumbar disc we measured the serum cobalt and chromium concentration following implantation of 15 Maverick TDAs (monosegmental L5/S1, n = 5; bisegmental L4/5 and L5/S1, n = 5; average age 36.5 years). Five healthy subjects (no metal implants) acted as a control group. The two measurements of the metals were carried out using the absorption spectrometry after an average of 14.8 and 36.7 months. In summary, the concentrations of cobalt and chromium ions in the serum at both follow-ups amounted on average to 3.3 microg/l (SD 2.6) for cobalt and 2.2 microg/l (SD 1.5) for chromium. These figures are similar to the figures shown in the literature following the implantation of metal-on-metal THA. After a comparison to the control group, both the chromium and cobalt levels in the serum showed visible increases regarding the first and the second follow-up. As there is still a significant release of cobalt and chromium into the serum after an average follow-up of 36.7 months a persistent release of these ions must be taken into consideration. Despite the evaluation of the systemic and local effects of the release of Cr/Co from orthopaedic implants has not yet been concluded, one should take into consideration an explanation given to patients scheduled for the implantation of a metal-on-metal TDA about these results and the benefits/risks of alternative combinations of gliding contact surfaces.

Characterisation of slab waveguides, fabricated in CaF2 and Er-doped tungsten-tellurite glass by MeV energy N+ ion implantation, using spectroscopic ellipsometry and m-line spectroscopy

NASA Astrophysics Data System (ADS)

Bányász, I.; Berneschi, S.; Lohner, T.; Fried, M.; Petrik, P.; Khanh, N. Q.; Zolnai, Z.; Watterich, A.; Bettinelli, M.; Brenci, M.; Nunzi-Conti, G.; Pelli, S.; Righini, G. C.; Speghini, A.

2010-05-01

Slab waveguides were fabricated in Er-doped tungsten-tellurite glass and CaF2 crystal samples via ion implantation. Waveguides were fabricated by implantation of MeV energy N+ ions at the Van de Graaff accelerator of the Research Institute for Particle and Nuclear Physics, Budapest, Hungary. Part of the samples was annealed. Implantations were carried out at energies of 1.5 MeV (tungsten-tellurite glass) and 3.5 MeV (CaF2). The implanted doses were between 5 x 1012 and 8 x 1016 ions/cm2. Refractive index profile of the waveguides was measured using SOPRA ES4G and Woollam M-2000DI spectroscopic ellipsometers at the Research Institute for Technical Physics and Materials Science, Budapest. Functionality of the waveguides was tested using a home-made instrument (COMPASSO), based on m-line spectroscopy and prism coupling technique, which was developed at the Materials and Photonics Devices Laboratory (MDF Lab.) of the Institute of Applied Physics in Sesto Fiorentino, Italy. Results of both types of measurements were compared to depth distributions of nuclear damage in the samples, calculated by SRIM 2007 code. Thicknesses of the guiding layer and of the implanted barrier obtained by spectroscopic ellipsometry correspond well to SRIM simulations. Irradiationinduced refractive index modulation saturated around a dose of 8 x 1016 ions/cm2 in tungsten-tellurite glass. Annealing of the implanted waveguides resulted in a reduction of the propagation loss, but also reduced the number of supported guiding modes at the lower doses. We report on the first working waveguides fabricated in an alkali earth halide crystal implanted by MeV energy medium-mass ions.

Monolithic high voltage nonlinear transmission line fabrication process

DOEpatents

Cooper, G.A.

1994-10-04

A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

NASA Astrophysics Data System (ADS)

Knoll, L.; Richter, S.; Nichau, A.; Trellenkamp, S.; Schäfer, A.; Wirths, S.; Blaeser, S.; Buca, D.; Bourdelle, K. K.; Zhao, Q.-T.; Mantl, S.

2014-08-01

Electrical characteristics of silicon nanowire tunnel field effect transistors (TFETs) are presented and benchmarked versus other concepts. Particular emphasis is placed on the band to band tunneling (BTBT) junctions, the functional core of the device. Dopant segregation from ion implanted ultrathin silicide contacts is proved as a viable method to achieve steep tunneling junctions. This reduces defect generation by direct implantation into the junction and thus minimizes the risk of trap assisted tunneling. The method is applied to strained silicon, specifically to nanowire array transistors, enabling the realization of n-type and p-type TFETs with fairly high currents and complementary TFET inverters with sharp transitions and good static gain, even at very low drain voltages of VDD = 0.2 V. These achievements suggest a considerable potential of TFETs for ultralow power applications. Gate-all-around Si nanowire array p-type TFETs have been fabricated to demonstrate the impact of electrostatic control on the device performance. A high on-current of 78 μA/μm at VD = VG = 1.1 V is obtained.

Materials science education: ion beam modification and analysis of materials

NASA Astrophysics Data System (ADS)

Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

2012-08-01

The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

Tribological characteristics of nitrogen (N+) implanted iron

NASA Technical Reports Server (NTRS)

Jones, W. R.; Ferrante, J.

1982-01-01

The effect of implantation of nitrogen ions (1.5 MeV) on the friction and wear characteristics of pure ion sliding against M-50 steel (unimplanted) was studied in a pin-on-disk sliding friction apparatus. Test conditions included room temperature (25 C), a dry air atmosphere, a load of 1/2 kg (4.9 N), sliding velocities of 0.043 to 0.078 m/sec (15 to 25 rpm), a pure hydrocarbon lubricant (n-hexadecane), or a U.S.P. mineral oil and nitrogen ion implantation doses of 5x10 to the 15th power and 5x10 to the 17th power ions/sq cm. No differences in wear rates were observed in the low dose experiments. In the high dose experiments, small reductions in initial (40 percent) and steady state (20 percent) wear rates were observed for nitrogen implanted iron riders as compared with unimplanted controls. No differences in average friction coefficients were noted for either dose. Auger electron spectroscopy combined with argon ion bombardment revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 6 atomic percent at a depth of 0.8 microns. Similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration. No inward migration of nitrogen ions was observed.

Ion Implantation Metallurgy: A Study of the Composition, Structure and Corrosion Behavior of Surface Alloys Formed by Ion Implantation.

DTIC Science & Technology

1980-04-01

spots are due to the " phase ). Dark field imaging of the a" phase shows a large density of small precipitates uniformly distributed in the ferrite . In...density of defect structures and small precipitates of Fe 16N2 (a"). Although there exists some evidence of martensitic transformation in aged speci...implantation into 304 stainless steel ha-s been shown to produce a micro- crystalline surface alloy saturated with P. Combined electrochemical and XPS studies

Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

NASA Astrophysics Data System (ADS)

Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

2018-03-01

ZnO has potential application in the field of short wavelength devices like LED's, laser diodes, UV detectors etc, because of its wide band gap (3.34 eV) and high exciton binding energy (60 meV). ZnO possess N-type conductivity due to presence of defects arising from oxygen and zinc interstitial vacancies. In order to achieve P-type or intrinsic carrier concentration an implantation study is preferred. In this report, we have varied phosphorous implantation time and studied its effect on optical as well structural properties of RF sputtered ZnO thin-films. Implantation was carried out using Plasma Immersion ion implantation technique for 10 and 20 s. These films were further annealed at 900°C for 10 s in oxygen ambient to activate phosphorous dopants. Low temperature photoluminescence (PL) spectra measured two distinct peaks at 3.32 and 3.199 eV for 20 s implanted sample annealed at 900°C. Temperature dependent PL measurement shows slightly blue shift in peak position from 18 K to 300 K. 3.199 eV peak can be attributed to donoracceptor pair (DAP) emission and 3.32 eV peak corresponds to conduction-band-to-acceptor (eA0) transition. High resolution x-ray diffraction revels dominant (002) peak from all samples. Increasing implantation time resulted in low peak intensity suggesting a formation of implantation related defects. Compression in C-axis with implantation time indicates incorporation of phosphorus in the formed film. Improvement in surface quality was observed from 20 s implanted sample which annealed at 900°C.

Site location and optical properties of Eu implanted sapphire

NASA Astrophysics Data System (ADS)

Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.

2005-10-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.

Tissue response to peritoneal implants

NASA Technical Reports Server (NTRS)

Picha, G. J.

1980-01-01

Peritoneal implants were fabricated from poly 2-OH, ethyl methacrylate (HEMA), polyetherurethane (polytetramethylene glycol 1000 MW, 1,4 methylene disocynate, and ethyl diamine), and untreated and sputter treated polytetrafluoroethylene (PTFE). The sputter treated PTFE implants were produced by an 8 cm diameter argon ion source. The treated samples consisted of ion beam sputter polished samples, sputter etched samples (to produce a microscopic surface cone texture) and surface pitted samples (produced by ion beam sputtering to result in 50 microns wide by 100 microns deep square pits). These materials were implanted in rats for periods ranging from 30 minutes to 14 days. The results were evaluated with regard to cell type and attachment kinetics onto the different materials. Scanning electron microscopy and histological sections were also evaluated. In general the smooth hydrophobic surfaces attracted less cells than the ion etched PTFE or the HEMA samples. The ion etching was observed to enhance cell attachment, multinucleated giant cell (MNGC) formation, cell to cell contact, and fibrous capsule formation. The cell responsed in the case of ion etched PTFE to an altered surface morphology. However, equally interesting was the similar attachment kinetics of HEMA verses the ion etched PTFE. However, HEMA resulted in a markedly different response with no MNGC's formation, minimal to no capsule formation, and sample coverage by a uniform cell layer.

In Vitro Investigation of the Effect of Oral Bacteria in the Surface Oxidation of Dental Implants.

PubMed

Sridhar, Sathyanarayanan; Wilson, Thomas G; Palmer, Kelli L; Valderrama, Pilar; Mathew, Mathew T; Prasad, Shalini; Jacobs, Michael; Gindri, Izabelle M; Rodrigues, Danieli C

2015-10-01

Bacteria are major contributors to the rising number of dental implant failures. Inflammation secondary to bacterial colonization and bacterial biofilm is a major etiological factor associated with early and late implant failure (peri-implantitis). Even though there is a strong association between bacteria and bacterial biofilm and failure of dental implants, their effect on the surface of implants is yet not clear. To develop and establish an in vitro testing methodology to investigate the effect of early planktonic bacterial colonization on the surface of dental implants for a period of 60 days. Commercial dental implants were immersed in bacterial (Streptococcus mutans in brain-heart infusion broth) and control (broth only) media. Immersion testing was performed for a period of 60 days. During testing, optical density and pH of immersion media were monitored. The implant surface was surveyed with different microscopy techniques post-immersion. Metal ion release in solution was detected with an electrochemical impedance spectroscopy sensor platform called metal ion electrochemical biosensor (MIEB). Bacteria grew in the implant-containing medium and provided a sustained acidic environment. Implants immersed in bacterial culture displayed various corrosion features, including surface discoloration, deformation of rough and smooth interfaces, pitting attack, and severe surface rusting. The surface features were confirmed by microscopic techniques, and metal particle generation was detected by the MIEB. Implant surface oxidation occurred in bacteria-containing medium even at early stages of immersion (2 days). The incremental corrosion resulted in dissolution of metal ions and debris into the testing solution. Dissolution of metal ions and particles in the oral environment can trigger or contribute to the development of peri-implantitis at later stages. © 2015 Wiley Periodicals, Inc.

In Vivo Model to Test Implanted Biosensors for Blood pH

NASA Technical Reports Server (NTRS)

Arnaud, Sara B.; Somps, Chris J.; Madou, Marc; Hines, John; Wade, Charles E. (Technical Monitor)

1997-01-01

Biosensors for monitoring physiologic data continuously through telemetry are available for heart rate, respiration, and temperature but not for blood pH or ions affected by hydrogen ion concentration. A telemetric biosensor for monitoring blood pH on-line could be used to identify and manage problems in fluid and electrolyte metabolism, cardiac and respiratory function during space flight and the acid-base status of patients without the need for venipuncture in patients on Earth. Critical to the development of biosensors is a method for evaluating their performance after implantation. Mature rats, prepared with jugular, cannulas for repeated blood samples, were exposed to a gas mixture containing high levels of carbon dioxide (7%) in a closed environment to induce mild respiratory acidosis. Serial blood gas and pH measurements in venous blood were compared with electrical responses from sensors implanted in the subcutaneous tissue. Animals became slightly tachypneic after exposure to excess CO2, but remained alert and active. After 5 minutes, basal blood pH decreased from 7.404 +/- 0.013 to 7.289 +/- 0.010 (p less than 0.001)and PC02 increased from 45 +/- 6 to 65 +/- 4 mm. Hg (p les than 0.001). Thereafter pH and blood gas parameters remained stable. Implanted sensors showed a decrease in millivolts (mV) which paralleled the change in pH and averaged 5-6 mV per 0.1 unit pH. Implanted sensors remained sensitive to modest changes in tissue pH for one week. A system for inducing acidosis in rats was developed to test the in vivo performance of pH biosensors. The system provides a method which is sensitive, rapid and reproducible in the same and different animals with full recovery, for testing the performance of sensors implanted in subcutaneous tissues.

TOPICAL REVIEW: The doping process and dopant characteristics of GaN

NASA Astrophysics Data System (ADS)

Sheu, J. K.; Chi, G. C.

2002-06-01

The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O, and grown-in defects, such as vacancy and antisite point defects, are also discussed. The doping process during epitaxial growth of GaN, AlGaN, InGaN, and their superlattice structures is described. Doping using the diffusion process and ion implantation techniques is also discussed. A p-n junction formed by Si implantation into p-type GaN is successfully fabricated. The results on crystal structure, electrical resistivity, carrier mobility, and optical spectra obtained by means of x-rays, low-temperature Hall measurements, and photoluminescence are also discussed.

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

NASA Astrophysics Data System (ADS)

Alves, A. D. C.; Newnham, J.; van Donkelaar, J. A.; Rubanov, S.; McCallum, J. C.; Jamieson, D. N.

2013-04-01

Solid state electronic devices fabricated in silicon employ many ion implantation steps in their fabrication. In nanoscale devices deterministic implants of dopant atoms with high spatial precision will be needed to overcome problems with statistical variations in device characteristics and to open new functionalities based on controlled quantum states of single atoms. However, to deterministically place a dopant atom with the required precision is a significant technological challenge. Here we address this challenge with a strategy based on stepped nanostencil lithography for the construction of arrays of single implanted atoms. We address the limit on spatial precision imposed by ion straggling in the nanostencil—fabricated with the readily available focused ion beam milling technique followed by Pt deposition. Two nanostencils have been fabricated; a 60 nm wide aperture in a 3 μm thick Si cantilever and a 30 nm wide aperture in a 200 nm thick Si3N4 membrane. The 30 nm wide aperture demonstrates the fabricating process for sub-50 nm apertures while the 60 nm aperture was characterized with 500 keV He+ ion forward scattering to measure the effect of ion straggling in the collimator and deduce a model for its internal structure using the GEANT4 ion transport code. This model is then applied to simulate collimation of a 14 keV P+ ion beam in a 200 nm thick Si3N4 membrane nanostencil suitable for the implantation of donors in silicon. We simulate collimating apertures with widths in the range of 10-50 nm because we expect the onset of J-coupling in a device with 30 nm donor spacing. We find that straggling in the nanostencil produces mis-located implanted ions with a probability between 0.001 and 0.08 depending on the internal collimator profile and the alignment with the beam direction. This result is favourable for the rapid prototyping of a proof-of-principle device containing multiple deterministically implanted dopants.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Lee, Benjamin G.; Fogel, Derek

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Mueller, C. H.; Croke, E. T.

2003-01-01

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Association Between Pseudotumor Formation and Patient Factors in Metal-on-Metal Total Hip Arthroplasty Population.

PubMed

Kleeman, Lindsay T; Goltz, Daniel; Seyler, Thorsten M; Mammarappallil, Joseph G; Attarian, David E; Wellman, Samuel S; Bolognesi, Michael P

2018-07-01

Pseudotumor formation from metal-on-metal (MoM) hip implants is associated with implant revision. The relationship between pseudotumor type and patient outcomes is unknown. We retrospectively reviewed patients with a MoM total hip arthroplasty and metal artifact reduction sequence magnetic resonance imaging. Pseudotumors were graded using a validated classification system by a fellowship-trained radiologist. Patient demographics, metal ion levels, and implant survival were analyzed. Pseudotumors were present in 49 hips (53%). Thirty-two (65%) pseudotumors were cystic thin walled, 8 (16%) were cystic thick walled, and 9 (18%) were solid masses. Patients with pseudotumors had high offset stems (P = .030) but not higher metal ion levels. Patients with thick-walled cystic or solid masses were more likely to be symptomatic (P = .025) and were at increased risk for revision (P = .004) compared to patients with cystic lesions. Pseudotumor formation is present in 53% of patients with a MoM total hip arthroplasty, of which 40% were asymptomatic. Patients with thick-walled cystic and solid lesions were more likely to be symptomatic and undergo revision. Copyright © 2018 Elsevier Inc. All rights reserved.

Gettering of Residual Impurities by Ion Implantation Damage in Poly-AlN UV Diode Detectors

NASA Astrophysics Data System (ADS)

Khan, A. H.; Stacy, T.; Meese, J. M.

1996-03-01

UV diode detectors have been fabricated from oriented polycrystalline AlN grown on (111) n-type 3-15Ω-cm Si substrates by CVD using AlCl3 and ammonia with a hydrogen carrier gas at 760-800C, 40-45 torr and gas flow rates of 350, 120, and 120 sccm for hydrogen, ammonia and hydrogen over heated AlCl_3. Half of the AlN film of thickness 1.5-2.0 microns was masked off prior to ion implantation. Samples were ion-implanted at 5 kV with methane, nitrogen and argon to a dose of 5-6 x 10^18 ions/cm^2. The AlN was contacted with sputtered Au while the Si was contacted with evaporated Al. No annealing was performed. Rectification was obtained as a result of radiation damage in the AlN. SIMs analysis showed a reduction of oxygen, hydrogen, chlorine and carbon by several orders of magnitude and to a depth of several microns in the ion implanted samples compared to the masked samples. The quantum efficiency was 16nm uncorrected for reflection from the AlN and thin metal contact.

Corrosion of dental magnet attachments for removable prostheses on teeth and implants.

PubMed

Boeckler, Arne F; Ehring, Carolin; Morton, Dean; Geis-Gerstorfer, Jürgen; Setz, Juergen M

2009-06-01

For a long time, the use of magnets for the anchorage of dental prostheses failed due to lack of biocompatibility and the magnets' high susceptibility to corrosion in the mouth. These facts make encapsulation of the magnetic alloy with a corrosion-resistant, tight, and functionally firm sealing necessary. Due to different products and analysis methods, it is not feasible to compare the findings for contemporary products with the sparse and rather old test results in the literature. Therefore, the aim of this study was the standardized control and the comparison of the corrosion behavior of modern magnetic attachments for use on teeth and dental implants. Thirty-seven components of magnetic attachments on implants and natural teeth from different alloys (NdFeB, SmCo, Ti, CrMoMnTiFe, etc.) as delivered by the manufacturers or fabricated according to their instructions were examined for their corrosion behavior using the statical immersion analysis (ISO 10271:2001). Four specimens of every product with the same design were used. An uncased SmCo magnet served as control. Analyses after 1, 4, 7, and 28 days of the storage in corrosion solution were made. The eluate was examined quantitatively on the alloy components of the respective component with the help of optical emission spectrometry (microg/cm(2)). The results were compared to the requirements of ISO standard 22674:2006. In addition, existing corrosion products were also defined in the solution after 28 days. The results were analyzed descriptively and statistically to determine possible significant differences (t-test and Mann-Whitney-Wilcoxon rank-sums test; p < 0.05). Dissolved metal ions could be found on all tested products. The release after 1 and 4 days was different for all specimens. In the group of implant abutments, the highest ion release after 7 days was found (all measurements microg/cm(2)): Fe (13.94, Magfit-IP-IDN dome type), Pd (1.53, Medical-anchor), Cr (1.32, Magfit-IP-IDN dome type), Ti (1.09, Magfit-IP-IDN abutment), Co (0.81, Medical-anchor), and B (0.6, Magfit-IP-IDN dome type). After 28 days, the analyzed ion release increased irregularly: Fe (173.58, Magfit-IP-IDN dome type), Pd (44.17, Medical-anchor), Cr (2.02, Magfit-IP-IDN dome type), Ti (2.11, Magfit-IP-IDN abutment), Co (26.13, Medical-anchor), B (1.77, Magfit-IP-IDN dome type), and Nd (79.18, Magfit-IP-IDN dome type). In the group of magnetic systems on natural teeth, the highest ion release after 7 days was found for Fe (4.81, Magfit DX 800 keeper), Cr (1.18, Magfit DX 800 keeper), Pd (0.21, Direct System Keeper), Ni (0.18, WR-Magnet S3 small), Co (0.12, Direct System Keeper), and Ti (0.09, Magna Cap - Mini). After 28 days, the analyzed ion release increased non-uniformly: Fe (31.92, Magfit DX 800 Keeper), Cr (6.65, Magfit DX 800 Keeper), Pd (18.19, Direct System Keeper), Ni (0.61, WR-Magnet S3 small), Co (10.94, Direct System Keeper), Ti (0.83, Magna Cap - Mini), and Pd (2.78, EFM Alloy). In contrast, the uncased control magnet showed an exponential release after 7 days of Sm ions (55.06) and Co-ions (86.83), after 28 days of Sm ions (603.91) and Co ions (950.56). The release of corrosion products of all tested products stayed significantly under the limit of 200 microg/cm(2) (ISO 22674:2006). In contrast, the non-encapsulated control magnet exceeded that limit significantly. The analysis of the corrosion behavior of modern magnetic attachments for use on teeth and dental implants according to ISO 10271:2001 showed that metal ions had dissolved on all specimens. In the case of one product, the magnet corroded. For this product, an improvement of the capsulation would be desirable. None of the products reached the limit specified in ISO 22674:2006. All products seem to be suitable for dental application. Further studies in regard to the specific biocompatibility and possible cytotoxic effects on mucosa and tissue would be desirable.

Surface topographical and structural analysis of Ag+-implanted polymethylmethacrylate

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Naab, Fabian; Toader, Ovidiu; Sagheer, Riffat; Bashir, Shazia; Zia, Rehana; Siraj, Khurram; Iqbal, Saman

2016-08-01

Specimens of polymethylmethacrylate (PMMA) were implanted with 400-keV Ag+ ions at different ion fluences ranging from 1 × 1014 to 5 × 1015 ions/cm2 using a 400-kV NEC ion implanter. The surface topographical features of the implanted PMMA were investigated by a confocal microscope. Modifications in the structural properties of the implanted specimens were analyzed in comparison with pristine PMMA by X-ray diffraction (XRD) and Raman spectroscopy. UV-Visible spectroscopy was applied to determine the effects of ion implantation on optical transmittance of the implanted PMMA. The confocal microscopic images revealed the formation of hillock-like microstructures along the ion track on the implanted PMMA surface. The increase in ion fluence led to more nucleation of hillocks. The XRD pattern confirmed the amorphous nature of pristine and implanted PMMA, while the Raman studies justified the transformation of Ag+-implanted PMMA into amorphous carbon at the ion fluence of ⩾5 × 1014 ions/cm2. Moreover, the decrease in optical transmittance of PMMA is associated with the formation of hillocks and ion-induced structural modifications after implantation.

Molecular carbon nitride ion beams for enhanced corrosion resistance of stainless steel

NASA Astrophysics Data System (ADS)

Markwitz, A.; Kennedy, J.

2017-10-01

A novel approach is presented for molecular carbon nitride beams to coat stainless surfaces steel using conventional safe feeder gases and electrically conductive sputter targets for surface engineering with ion implantation technology. GNS Science's Penning type ion sources take advantage of the breaking up of ion species in the plasma to assemble novel combinations of ion species. To test this phenomenon for carbon nitride, mixtures of gases and sputter targets were used to probe for CN+ ions for simultaneous implantation into stainless steel. Results from mass analysed ion beams show that CN+ and a variety of other ion species such as CNH+ can be produced successfully. Preliminary measurements show that the corrosion resistance of stainless steel surfaces increased sharply when implanting CN+ at 30 keV compared to reference samples, which is interesting from an application point of view in which improved corrosion resistance, surface engineering and short processing time of stainless steel is required. The results are also interesting for novel research in carbon-based mesoporous materials for energy storage applications and as electrode materials for electrochemical capacitors, because of their high surface area, electrical conductivity, chemical stability and low cost.

Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures.

PubMed

Nogales, E; Hidalgo, P; Lorenz, K; Méndez, B; Piqueras, J; Alves, E

2011-07-15

Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga(2)O(3) and GeO(2) structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the (5)D(0)-(7)F(2) Eu(3+) intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga(2)O(3), which is assigned to the lattice recovery. Gd(3+) as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd(3+) is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd(3+) (6)P(7/2)-(8)S(7/2) intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

Process yield improvements with process control terminal for varian serial ion implanters

NASA Astrophysics Data System (ADS)

Higashi, Harry; Soni, Ameeta; Martinez, Larry; Week, Ken

Implant processes in a modern wafer production fab are extremely complex. There can be several types of misprocessing, i.e. wrong dose or species, double implants and missed implants. Process Control Terminals (PCT) for Varian 350Ds installed at Intel fabs were found to substantially reduce the number of misprocessing steps. This paper describes those misprocessing steps and their subsequent reduction with use of PCTs. Reliable and simple process control with serial process ion implanters has been in increasing demand. A well designed process control terminal greatly increases device yield by monitoring all pertinent implanter functions and enabling process engineering personnel to set up process recipes for simple and accurate system operation. By programming user-selectable interlocks, implant errors are reduced and those that occur are logged for further analysis and prevention. A process control terminal should also be compatible with office personal computers for greater flexibility in system use and data analysis. The impact from the capability of a process control terminal is increased productivity, ergo higher device yield.

Structures and optical properties of \\text{H}_{2}^{+} -implanted GaN epi-layers

NASA Astrophysics Data System (ADS)

Li, B. S.; Wang, Z. G.

2015-06-01

The implantation damage build-up and optical properties of GaN epitaxial films under \\text{H}2+ ion implantation have been investigated by a combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. GaN epitaxial films were implanted with 134 keV \\text{H}2+ ions to doses ranging from 3.75   ×   1016 to 1.75   ×   1017 \\text{H}2+  cm-2 at room temperature or the same dose of 1.5   ×   1017 \\text{H}2+  cm-2 at room temperature, 573 and 723 K. The dependence of lattice disorder induced by \\text{H}2+ -implantation on the ion dose can be divided into a three-step damage process. A strong influence of the H concentration on the defect accumulation is discussed. The decrease in relative Ga disorder induced by \\text{H}2+ -implantation is linear with increasing implantation temperature. The absorption coefficient of GaN epitaxial films increases with increasing ion dose, leading to the decrease in Raman scattering spectra of Ga-N vibration. With increasing implantation doses up to 5   ×   1016 \\text{H}2+  cm-2, nanoscale hydrogen bubbles are observed in the H deposition peak region. Interstitial-type dislocation loops are observed in the damaged layer located near the damage peak region, and the geometry of the dislocation loops produced by H implantation is analyzed. The surface layer is almost free of lattice disorder induced by \\text{H}2+ -implantation.

Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions

NASA Astrophysics Data System (ADS)

Tardío, M.; Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J. E.; Alves, E.

2016-07-01

The electrical conductivity in α-Al2O3 single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 1015, 5 × 1015 and 5 × 1016 ions/cm2. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I-V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

An In Vitro Mechanism Study on the Proliferation and Pluripotency of Human Embryonic Stems Cells in Response to Magnesium Degradation

PubMed Central

Nguyen, Thanh Yen; Liew, Chee Gee; Liu, Huinan

2013-01-01

Magnesium (Mg) is a promising biodegradable metallic material for applications in cellular/tissue engineering and biomedical implants/devices. To advance clinical translation of Mg-based biomaterials, we investigated the effects and mechanisms of Mg degradation on the proliferation and pluripotency of human embryonic stem cells (hESCs). We used hESCs as the in vitro model system to study cellular responses to Mg degradation because they are sensitive to toxicants and capable of differentiating into any cell types of interest for regenerative medicine. In a previous study when hESCs were cultured in vitro with either polished metallic Mg (99.9% purity) or pre-degraded Mg, cell death was observed within the first 30 hours of culture. Excess Mg ions and hydroxide ions induced by Mg degradation may have been the causes for the observed cell death; hence, their respective effects on hESCs were investigated for the first time to reveal the potential mechanisms. For this purpose, the mTeSR®1 hESC culture media was either modified to an alkaline pH of 8.1 or supplemented with 0.4–40 mM of Mg ions. We showed that the initial increase of media pH to 8.1 had no adverse effect on hESC proliferation. At all tested Mg ion dosages, the hESCs grew to confluency and retained pluripotency as indicated by the expression of OCT4, SSEA3, and SOX2. When the supplemental Mg ion dosages increased to greater than 10 mM, however, hESC colony morphology changed and cell counts decreased. These results suggest that Mg-based implants or scaffolds are promising in combination with hESCs for regenerative medicine applications, providing their degradation rate is moderate. Additionally, the hESC culture system could serve as a standard model for cytocompatibility studies of Mg in vitro, and an identified 10 mM critical dosage of Mg ions could serve as a design guideline for safe degradation of Mg-based implants/scaffolds. PMID:24146887

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yusa, Kazuyuki; Yamamoto, Osamu; Fukuda, Masayuki

Highlights: {yields} We isolated the Zn{sup 2+} ions (eluted Zn{sup 2+} ion; EZ) from zinc-incorporated titanium implant. {yields} The EZ promoted the cell viability in hBMCs. {yields} The EZ stimulated preosteoblast and osteoblast marker gene expression in hBMCs. {yields} The hBMCs supplemented with EZ showed typically cell morphology when osteoblast maturing. {yields} It is revealed that the EZ also stimulates the calcium deposition of hBMCs. -- Abstract: Zinc is one of the trace elements which induce the proliferation and the differentiation of the osteoblast. In the previous study, we found that zinc ions (Zn{sup 2+} ion)-releasing titanium implants had excellentmore » bone fixation using a rabbit femurs model. In this study, we isolated the Zn{sup 2+} ions (eluted Zn{sup 2+} ion; EZ) released from the implant surface, and evaluated the effect of EZ on the osteogenesis of human bone marrow-derived mesenchymal cells (hBMCs). In the result, it was found that the EZ stimulated cell viability, osteoblast marker gene (type I collagen, osteocalcin (OC), alkaline phosphatase (ALP) and bone sialoprotein (BSP)) expressions and calcium deposition in hBMCs.« less

Laser Desorption/Ionization Mass Spectrometric Imaging of Endogenous Lipids from Rat Brain Tissue Implanted with Silver Nanoparticles

NASA Astrophysics Data System (ADS)

Muller, Ludovic; Baldwin, Kathrine; Barbacci, Damon C.; Jackson, Shelley N.; Roux, Aurélie; Balaban, Carey D.; Brinson, Bruce E.; McCully, Michael I.; Lewis, Ernest K.; Schultz, J. Albert; Woods, Amina S.

2017-08-01

Mass spectrometry imaging (MSI) of tissue implanted with silver nanoparticulate (AgNP) matrix generates reproducible imaging of lipids in rodent models of disease and injury. Gas-phase production and acceleration of size-selected 8 nm AgNP is followed by controlled ion beam rastering and soft landing implantation of 500 eV AgNP into tissue. Focused 337 nm laser desorption produces high quality images for most lipid classes in rat brain tissue (in positive mode: galactoceramides, diacylglycerols, ceramides, phosphatidylcholines, cholesteryl ester, and cholesterol, and in negative ion mode: phosphatidylethanolamides, sulfatides, phosphatidylinositol, and sphingomyelins). Image reproducibility in serial sections of brain tissue is achieved within <10% tolerance by selecting argentated instead of alkali cationized ions. The imaging of brain tissues spotted with pure standards was used to demonstrate that Ag cationized ceramide and diacylglycerol ions are from intact, endogenous species. In contrast, almost all Ag cationized fatty acid ions are a result of fragmentations of numerous lipid types having the fatty acid as a subunit. Almost no argentated intact fatty acid ions come from the pure fatty acid standard on tissue.

Quantum point contacts for electrons on H-Si(111) surfaces using a Ga focused-ion beam for direct-write implant lithography

NASA Astrophysics Data System (ADS)

Robertson, Luke D.; Kane, B. E.

Quantum point contacts (QPCs) realized in materials with anisotropic electron mass, such as Si, may exhibit valley filter phenomena leading to extreme sensitivity to single donor occupancy, and thus are of interest to measurement schemes for donor-based quantum information processing. To this end, we have developed ambipolar devices on a H-Si(111):Si(100)/SiO2 flip-chip assembly which utilize in-plane, degenerately doped n+ (P) and p+ (B) contacts to probe transport in a 2D electron system (2DES). In addition to providing electrostatic isolation of carriers, these p-type contacts can be used as lateral depletion gates to modulate the 2DES conductance, and if extended to the nanoscale can lead to 1D confinement and quantized conductance of the 2DES. In this talk, I will describe our efforts to use a Ga focused-ion beam for direct-write implant lithography to pattern QPCs and Ga nanowires on H-Si(111) surfaces. I will present low temperature (4.2K) conductance data collected on 30nm Ga nanowires to demonstrate their effectiveness as lateral depletion gates, and discuss on going measurements to confine and modulate the conductance of the 2DES using Ga QPCs.

Involvement of COX-2 in nickel elution from a wire implanted subcutaneously in mice.

PubMed

Sato, Taiki; Kishimoto, Yu; Asakawa, Sanki; Mizuno, Natsumi; Hiratsuka, Masahiro; Hirasawa, Noriyasu

2016-07-01

Many types of medical alloys include nickel (Ni), and the elution of Ni ions from these materials causes toxicities and inflammation. We have previously reported that inflammation enhances Ni elution, although the molecular mechanisms underlying this effect remain unclear. In this study, we investigated how inflammatory responses enhanced Ni elution in a wire-implantation mouse model. Subcutaneous implantation of Ni wire induced the expression of cyclooxygenase-2 (COX-2) and microsomal prostaglandin E synthase-1 (mPGES-1) mRNA in the surrounding tissues. Immunostaining analysis showed that cells expressing COX-2 were mainly fibroblast-like cells 8h after implantation of a Ni wire, but were mainly infiltrated leukocytes at 24h. NiCl2 induced the expression of COX-2 mRNA in primary fibroblasts, neutrophils, RAW 264 cells, and THP-1 cells, indicating that Ni ions can induce COX-2 expression in various types of cells. The elution of Ni ions from the implanted Ni wire at 8h was reduced by dexamethasone (Dex), indomethacin (Ind), or celecoxib (Cel) treatment. Ni wire implantation induced an increase in mRNA levels for anaerobic glycolytic pathway components glucose transporter 1 (GLUT1), hexokinase 2 (HK2), lactate dehydrogenase A (LDHA), and monocarboxylate transporter 4 (MCT4); the expression of these genes was also inhibited by Dex, Ind, and Cel. In primary fibroblasts, the expression of these mRNAs and the production of lactate were induced by NiCl2 and further potentiated by PGE2. Furthermore, Ni wire-induced infiltration of inflammatory leukocytes was significantly reduced by Dex, Ind, or Cel. Depletion of neutrophils with a specific antibody caused reduction of both leukocyte infiltration and Ni elution. These results indicate that Ni ions eluted from wire induced COX-2 expression, which further promoted elution of Ni ions by increasing lactate production and leukocyte infiltration. Since COX inhibitors and Dex reduced the elution of Ni ions, these drugs may be useful for prevention of metal-related inflammation and allergy. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

The effects of ion implantation on the beaks of orthodontic pliers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mizrahi, E.; Cleaton-Jones, P.E.; Luyckz, S.

1991-06-01

The surface of stainless steel may be hardened by bombarding the material with a stream of nitrogen ions generated by a nuclear accelerator. In the present study this technique was used to determine the hardening effect of ion implantation on the beaks of stainless steel orthodontic pliers. Ten orthodontic pliers (Dentarum 003 094) were divided into two equal groups, designated control and experimental. The beaks of the experimental pliers were subjected to ion implantation, after which the tips of the beaks of all the pliers were stressed in an apparatus attached to an Instron testing machine. A cyclical load ofmore » 500 N was applied to the handles of the pliers, while a 0.9 mm (0.036 inch) round, stainless steel wire was held between the tips of the beaks. The effect of the stress was assessed by measurement with a traveling microscope of the gap produced between the tips of the beaks. Measurements were taken before loading and after 20, 40, 60, and 80 cycles. Statistical analysis of variance and the two-sample t tests indicated that there was a significant increase in the size of the gap as the pliers were stressed from 0 to 80 cycles (p less than 0.001). Furthermore, the mean gap was significantly greater in the control group than in the experimental group (p less than 0.001). This study suggests that ion implantation increases the hardness of the tips of the beaks of orthodontic pliers.« less

Vacancy identification in Co+ doped rutile TiO2 crystal with positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Qin, X. B.; Zhang, P.; Liang, L. H.; Zhao, B. Z.; Yu, R. S.; Wang, B. Y.; Wu, W. M.

2011-01-01

Co-doped rutile TiO2 films were synthesized by ion implantation. Variable energy positron annihilation Doppler broadening spectroscopy and coincidence Doppler broadening measurements were performed for identification of the vacancies. A newly formed type of vacancy can be concluded by the S-W plot and the CDB results indicated that the oxygen vacancy (VO) complex Ti-Co-VO and/or Ti-VO are formed with Co ions implantation and the vacancy concentration is increased with increase of dopant dose.

Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Kai; Wang, Yibo; Li, Zhuguo, E-mail: lizg@sjtu.edu.cn

Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enrichedmore » region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.« less

Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties

PubMed Central

Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T.; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F.; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W.

2016-01-01

The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently. PMID:26955791

Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties

NASA Astrophysics Data System (ADS)

Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T.; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F.; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W.

2016-03-01

The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently.

Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties.

PubMed

Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W

2016-03-09

The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently.

Ion implantation modified stainless steel as a substrate for hydroxyapatite deposition. Part I. Surface modification and characterization.

PubMed

Pramatarova, L; Pecheva, E; Krastev, V; Riesz, F

2007-03-01

Material surfaces play critical role in biology and medicine since most biological reactions occur on surfaces and interfaces. There are many examples showing that the surface properties of the materials control and are directly involved in biological reactions and processes in-vitro like blood compatibility, protein absorption, cell development, etc. The rules that govern the diversity of biological surface phenomenon are fundamental physical laws. Stainless steel doped with Cr, Ni and Mo is widely used material in medicine and dentistry due to its excellent corrosion resistance and mechanical properties. The interest in this material has stimulated extensive studies on improving its bone-bonding properties. This paper describes the surface modification of Cr-Ni stainless steel (AISI 316) by a whole surface sequential implantation of Ca and P ions (the basic ions of hydroxyapatite). Three groups of stainless steel samples are prepared: (i) ion-implanted, (ii) ion-implanted and thermally treated at 600( composite function)C in air for 1 h and (iii) initials. The surface chemistry and topography before and after the surface modification are characterized by X-ray photoelectron spectroscopy, Auger electron spectroscopy, magic mirror method, atomic force microscopy and contact angle measurements.

Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations

NASA Astrophysics Data System (ADS)

Tsutsumi, Toshiyuki

2018-06-01

The threshold voltage (V th) fluctuation induced by ion implantation (I/I) in the source and drain extensions (SDEs) of a silicon-on-insulator (SOI) triple-gate (Tri-Gate) fin-type field-effect transistor (FinFET) was analyzed by both three-dimensional (3D) process and device simulations collaboratively. The origin of the V th fluctuation induced by the SDE I/I is basically a variation of a bottleneck barrier height (BBH) due to implanted arsenic (As+) ions. In particular, a very low and broad V th distribution in the saturation region is due to percolative conduction in addition to the BBH variation. Moreover, it is surprisingly found that the V th fluctuation is mostly characterized by the BBH of only a top surface center line of a Si fin of the device. Our collaborative approach by 3D process and device simulations is dispensable for the accurate investigation of variability-tolerant devices. The obtained results are beneficial for the research and development of such future devices.

Annealing temperature effects on the magnetic properties and induced defects in C/N/O implanted MgO

NASA Astrophysics Data System (ADS)

Li, Qiang; Ye, Bonian; Hao, Yingping; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

2013-02-01

Virgin MgO single crystals were implanted with 70 keV C/N/O ions at room temperature to a dose of 2 × 1017/cm2. After implantation the samples showed room temperature hysteresis in magnetization loops. The annealing effects on the magnetic properties and induced defects of these samples were determined by vibrating sample magnetometer and positron annihilation spectroscopy, respectively. The experimental results indicate that ferromagnetism can be introduced to MgO single crystals by doping with C, N or introduction of Mg related vacancy defects. However, the Mg vacancies coexistence with C or N ions in the C-/N-implanted samples may play a negative role in magnetic performance in these MgO samples. The rapid increase of magnetic moment in O-implanted sample is attributed to the formation of new type of vacancy defects.

Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kummari, Venkata C.; Reinert, Tilo; Jiang, Weilin

Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC(0001) to four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5×1013(0.0034), 7.8×1013(0.018), 1.5×1014(0.034), and 7.8×1014(0.18) ions/cm2, respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C) and Raman spectroscopy. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. Raman Spectroscopy was performed using a green laser of wavelength 532 nmmore » as excitation source. The normalized Raman Intensity, In shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.017, 0.034 and 0.178 respectively. In this paper, the characterizations of the defects produced due to the Nitrogen implantation in 4H-SiC are presented and the results are discussed.« less

Fatigue and fluoride corrosion on Streptococcus mutans adherence to titanium-based implant/component surfaces.

PubMed

Correa, Cassia Bellotto; Pires, Juliana Rico; Fernandes-Filho, Romeu Belon; Sartori, Rafael; Vaz, Luis Geraldo

2009-07-01

The influence of fatigue and the fluoride ion corrosion process on Streptococcus mutans adherence to commercially pure Titanium (Cp Ti) implant/component set surfaces were studied. Thirty Nobel implants and 30 Neodent implants were used. Each commercial brand was divided into three groups. Group A: control, Group B: sets submitted to fatigue (10(5) cycles, 15 Hz, 150 N), and Group C: sets submitted to fluoride (1500 ppm, pH 5.5) and fatigue, simulating a mean use of 5 years in the oral medium. Afterward, the sets were contaminated with standard strains of S. mutans (NTCC 1023) and analyzed by scanning electronic microscopy (SEM) and colony-forming unit counts (CFU/mL). By SEM, bacterial adherence was verified only in group C in both brands. By CFU/mL counts, S. mutans was statistically higher in both brands in group C than in groups A and B (p < 0.05, ANOVA). The process of corrosion by fluoride ions on Cp Ti implant/component sets allowed greater S. mutans adherence than in the absence of corrosion and with the fatigue process in isolation.

Serum levels of nickel and chromium after instrumented posterior spinal arthrodesis.

PubMed

Kim, Young-Jo; Kassab, Farid; Berven, Sigurd H; Zurakowski, David; Hresko, M Timothy; Emans, John B; Kasser, James R

2005-04-15

Cross-sectional study of 37 patients to measure serum levels of nickel and chromium after posterior spinal arthrodesis using stainless steel implants. To investigate the relationship between factors such as age, gender, pain, time from surgery, length of arthrodesis, and level of arthrodesis to serum metal ion levels after instrumented spinal arthrodesis. Measurable levels of metal ions in the serum can be detected after the use of stainless steel implants. There is some evidence to suggest that long-term exposure can potentially be toxic. Posterior spinal arthrodesis with stainless steel implants is a common procedure to treat spinal deformity in the adolescent population; however, the extent of metal ion exposure after posterior spinal arthrodesis is unknown. Patients that underwent posterior instrumented spinal arthrodesis with more than 6 months follow-up were recruited for this study. Patients with altered neurologic function were excluded. Serum levels of nickel and chromium were measured using inductively coupled plasma mass spectrometry. Pain was assessed using the Oswestry questionnaire. Spine radiographs were used to look for evidence of pseudarthrosis. Forty-five patients were approached, and 37 agreed to the questionnaire and blood test. Ten patients were men and 27 were women. Mean age at surgery was 14 years with mean follow-up of 6 years. Statistical correlations between serum metal ion levels and age at surgery, time from surgery, gender, number of segments fused, spinal instrument interfaces, pain, and instrumentation type were assessed. Abnormally high levels of nickel and chromium above normal levels (0.3 ng/mL for nickel, 0.15 ng/mL for chromium) could be detected in serum after posterior spinal arthrodesis using stainless steel implants. There was a significant inverse correlation between serum nickel (r = -0.61, P < 0.001) and chromium (r = -0.64, P < 0.001) levels and time from surgery. When patients were grouped based on lengths of time from surgery, 0 to 2 years (n = 7), 2 to 4 years (n = 11), and >4 years (n = 8), the mean +/- SD for nickel (ng/mL) was 3.8 +/- 2.6, 1.3 +/- 1.1, and 0.9 +/- 0.8, respectively. Analysis ofvariance revealed significant group differences (P =0.004). Similarly, the chromium levels were 2.7 +/- 2.7, 0.6 +/- 0.4, and 0.3 +/- 0.3, respectively (P = 0.018). Only time from surgery was a significant multivariate predictor of nickel and chromium serum levels. Pseudarthrosis was not seen in this cohort. Elevated levels of nickel and chromium can be measured after posterior instrumented spinal arthrodesis. The levels diminish rapidly with time from surgery but still remained above normal levels 4 years after surgery. Long-term implication of this metal ion exposure is unknown and should be studied further.

Erbium ion implantation into different crystallographic cuts of lithium niobate

NASA Astrophysics Data System (ADS)

Nekvindova, P.; Svecova, B.; Cajzl, J.; Mackova, A.; Malinsky, P.; Oswald, J.; Kolistsch, A.; Spirkova, J.

2012-02-01

Single crystals like lithium niobate are frequently doped with optically active rare-earth or transition-metal ions for a variety of applications in optical devices such as solid-state lasers, amplifiers or sensors. To exploit the potential of the Er:LiNbO 3, one must ensure high intensity of the 1.5 μm luminescence as an inevitable prerequisite. One of the important factors influencing the luminescence properties of a lasing ion is the crystal field of the surrounding, which is inevitably determined by the crystal structure of the pertinent material. From that point it is clear that it cannot be easy to affect the resulting luminescence properties - intensity or position of the luminescence band - without changing the structure of the substrate. However, there is a possibility to utilise a potential of the ion implantation of the lasing ions, optionally accompanied with a sensitising one, that can, besides the doping, also modify the structure of the treated area od the crystal. This effect can be eventually enhanced by a post-implantation annealing that may help to recover the damaged structure and hence to improve the desired luminescence. In this paper we are going to report on our experiments with ion-implantation technique followed with subsequent annealing could be a useful way to influence the crystal field of LN. Optically active Er:LiNbO 3 layers were fabricated by medium energy implantation under various experimental conditions. The Er + ions were implanted at energies of 330 and 500 keV with fluences ranging from 1.0 × 10 15 to 1.0 × 10 16 ion cm -2 into LiNbO 3 single-crystal cuts of both common and special orientations. The as-implanted samples were annealed in air and oxygen at two different temperatures (350 and 600 °C) for 5 h. The depth concentration profiles of the implanted erbium were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He + ions. The photoluminescence spectra of the samples were measured to determine the emission of 1.5 μm. It has been shown that the projected range Rp of the implanted erbium depends on the beam energies of implantation. The concentration of the implanted erbium corresponds well with the fluence and is similar in all of the cuts of lithium niobate used. What was different were the intensities of the 1.5 μm luminescence bands not only before and after the annealing but also in various types of the crystal cuts. The cut perpendicular to the cleavage plane <10-14> exhibited the best luminescence properties for all of the experimental conditions used. In order to study the damage introduced by the implantation process, the influence of the annealing procedure on the recovery of the host lattice was examined by RBS/channelling. The RBS/channelling method serves to determine the disorder density in the as-implanted surface layer.

Investigation of the Structural Stability of Ion-Implanted Gd 2Ti 2-xSn xO 7 Pyrochlore-Type Oxides by Glancing Angle X-ray Absorption Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aluri, Esther Rani; Hayes, John R.; Walker, James D.S.

2016-03-24

Rare-earth titanate and stannate pyrochlore-type oxides have been investigated in the past for the sequestration of nuclear waste elements because of their resistance to radiation-induced structural damage. In order to enhance this property, it is necessary to understand the effect of radioactive decay of the incorporated actinide elements on the local chemical environment. In this study, Gd 2Ti 2–xSn xO 7 materials have been implanted with Au– ions to simulate radiation-induced structural damage. Glancing angle X-ray absorption near-edge spectroscopy (GA-XANES), glancing angle X-ray absorption fine structure (GA-EXAFS) analysis, and powder X-ray diffraction have been used to investigate changes in themore » local coordination environment of the metal atoms in the damaged surface layer. Examination of GA-XANES/EXAFS spectra from the implanted Gd 2Ti 2–xSn xO 7 materials collected at various glancing angles allowed for an investigation of how the local coordination environment around the absorbing atoms changed at different depths in the damaged surface layer. This study has shown the usefulness of GA-XANES to the examination of ion-implanted materials and has suggested that Gd 2Ti 2–xSn xO 7 becomes more susceptible to ion-beam-induced structural damage with increasing Sn concentration.« less

Photoemission studies of amorphous silicon induced by P + ion implantation

NASA Astrophysics Data System (ADS)

Petö, G.; Kanski, J.

1995-12-01

An amorphous Si layer was formed on a Si (1 0 0) surface by P + implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. The differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher binding energy. Qualitativity similar results have been reported for Sb implanted amorphous Ge and the modification seems to be due to the changed short range order.

Comparative study of image contrast in scanning electron microscope and helium ion microscope.

PubMed

O'Connell, R; Chen, Y; Zhang, H; Zhou, Y; Fox, D; Maguire, P; Wang, J J; Rodenburg, C

2017-12-01

Images of Ga + -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga + density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Laser-induced thermo-lens in ion-implanted optically-transparent polymer

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Ivanov, Victor G.; Hadjichristov, Georgi B.

2009-10-01

A strong laser-induced thermo-lens (LITL) effect is found in optically-transparent ion-implanted polymer upon irradiation by a cw laser with a power up to 100 mW (λ = 532 nm). The effect is observed in bulk polymethylmethacrylate (PMMA) implanted with silicon ions (Si+). A series of PMMA specimens is examined, subjected to low-energy (50 keV) Si+ implantation at various dosages in the range from 1014 to 1017 ions/cm2. The thermo-lensing is unambiguously attributed to the modification of the subsurface region of the polymer upon the ion implantation. Having a gradient refractive-index in-depth profile, the subsurface organic-carbonaceous layer produced in the polymer by ion implantation, is responsible for the LITL effect observed in reflection geometry. The LITL occurs due to optical absorption of the ion-implanted layer of a thickness of about 100 nm buried in a depth ~ 100 nm, and subsequent laser-induced change in the refractive index of the Si+-implanted PMMA. Being of importance as considering photonic applications of ion-implanted optically-transparent polymers, the LITL effect in Si+-implanted PMMA is studied as a function of the implant dose, the incident laser power and incidence angle, and is linked to the structure formed in this ion-implanted plastic.

Metal Ion Concentrations in Body Fluids after Implantation of Hip Replacements with Metal-on-Metal Bearing – Systematic Review of Clinical and Epidemiological Studies

PubMed Central

Hartmann, Albrecht; Hannemann, Franziska; Lützner, Jörg; Seidler, Andreas; Drexler, Hans; Günther, Klaus-Peter; Schmitt, Jochen

2013-01-01

Introduction The use of metal-on-metal (MoM) total hip arthroplasty (THA) increased in the last decades. A release of metal products (i.e. particles, ions, metallo-organic compounds) in these implants may cause local and/or systemic adverse reactions. Metal ion concentrations in body fluids are surrogate measures of metal exposure. Objective To systematically summarize and critically appraise published studies concerning metal ion concentrations after MoM THA. Methods Systematic review of clinical trials (RCTs) and epidemiological studies with assessment of metal ion levels (cobalt, chromium, titanium, nickel, molybdenum) in body fluids after implantation of metalliferous hip replacements. Systematic search in PubMed and Embase in January 2012 supplemented by hand search. Standardized abstraction of pre- and postoperative metal ion concentrations stratified by type of bearing (primary explanatory factor), patient characteristics as well as study quality characteristics (secondary explanatory factors). Results Overall, 104 studies (11 RCTs, 93 epidemiological studies) totaling 9.957 patients with measurement of metal ions in body fluids were identified and analyzed. Consistently, median metal ion concentrations were persistently elevated after implantation of MoM-bearings in all investigated mediums (whole blood, serum, plasma, erythrocytes, urine) irrespective of patient characteristics and study characteristics. In several studies very high serum cobalt concentrations above 50 µg/L were measured (detection limit typically 0.3 µg/L). Highest metal ion concentrations were observed after treatment with stemmed large-head MoM-implants and hip resurfacing arthroplasty. Discussion Due to the risk of local and systemic accumulation of metallic products after treatment with MoM-bearing, risk and benefits should be carefully balanced preoperatively. The authors support a proposed „time out“ for stemmed large-head MoM-THA and recommend a restricted indication for hip resurfacing arthroplasty. Patients with implanted MoM-bearing should receive regular and standardized monitoring of metal ion concentrations. Further research is indicated especially with regard to potential systemic reactions due to accumulation of metal products. PMID:23950923

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

NASA Astrophysics Data System (ADS)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

N and Cr ion implantation of natural ruby surfaces and their characterization

NASA Astrophysics Data System (ADS)

Rao, K. Sudheendra; Sahoo, Rakesh K.; Dash, Tapan; Magudapathy, P.; Panigrahi, B. K.; Nayak, B. B.; Mishra, B. K.

2016-04-01

Energetic ions of N and Cr were used to implant the surfaces of natural rubies (low aesthetic quality). Surface colours of the specimens were found to change after ion implantation. The samples without and with ion implantation were characterized by diffuse reflectance spectra in ultra violet and visible region (DRS-UV-Vis), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and nano-indentation. While the Cr-ion implantation produced deep red surface colour (pigeon eye red) in polished raw sample (without heat treatment), the N-ion implantation produced a mixed tone of dark blue, greenish blue and violet surface colour in the heat treated sample. In the case of heat treated sample at 3 × 1017 N-ions/cm2 fluence, formation of colour centres (F+, F2, F2+ and F22+) by ion implantation process is attributed to explain the development of the modified surface colours. Certain degree of surface amorphization was observed to be associated with the above N-ion implantation.

Secondary ion mass spectroscopy study of Au trapping and migration in the Au-irradiated YBa2Cu3O7 - delta film

NASA Astrophysics Data System (ADS)

Li, Yupu; Kilner, J. A.; Liu, J. R.; Chu, W. K.; Wagner, G. A.; Somekh, R. E.

1996-05-01

The range data and migration of Au in YBa2Cu3O7-δ film were studied with implanted 197Au (1.5 MeV 5×1015 Au+/cm2) as a tracer. The film was a c-axis oriented film, ˜750 nm thick, deposited by high-pressure planar dc sputtering on <100> LaAlO3. Analysis by secondary ion mass spectroscopy shows that the as-implanted Au concentration distribution is essentially Gaussian-like and the depth (R̂p) of maximum Au concentration (˜1.2 wt %) is 201 nm. The projected range (R¯p) and (R̂p) are found to be in very good agreement with the simulated data by TRIM-95, whereas the measured ``straggle'' (ΔRp*) is about 20% larger than that by TRIM-95 simulation. It has also been found that the implanted 197Au starts to migrate within the film at a temperature between 650 and 700 °C, which is much higher than that for the implanted 2H (˜175 °C) and the implanted 18O (between 250 and 300 °C) in c-oriented YBa2Cu3O7-δ films.

Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si

NASA Astrophysics Data System (ADS)

Fujiwara, N.; Saito, K.; Nakabayashi, Y.; Osuman, H. I.; Toyonaga, K.; Matsumoto, S.; Sato, Y.

2002-01-01

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5×10 13 cm-3, 100 keV) through a chemical vapor deposition (CVD) Si 3N 4 film. For a half of samples, Si 3N 4 was etched off and SiO 2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 °C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si 3N 4 and Si/SiO 2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO 2 and Si 3N 4 films for the present annealing condition of 700 °C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO 2 cover film, amount of dose decreases with the annealing time. On the other hand, amount of dose decrease with annealing time up to 180 min, but is recovered for more than 180 min in case of the Si 3N 4 cover film. From TEM and EELS analyses, it is found that nitrogen segregates at the Si/Si 3N 4 interface, resulting in recovery of dose loss.

Method for ion implantation induced embedded particle formation via reduction

DOEpatents

Hampikian, Janet M; Hunt, Eden M

2001-01-01

A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

The Narodny ion accelerator as an injector for a small cyclotron

NASA Astrophysics Data System (ADS)

Derenchuk, V.

1985-01-01

A 120 keV electrostatic accelerator is currently in use at the University of Manitoba as an ion implanter. It is proposed to use this accelerator (called the Narodny ion accelerator or NIA), upgraded to 200 keV, as an injector for a small light ion cyclotron. This "minicyclotron" will consist of 6 sectors with four dees operating at 60 kV and variable frequency. The ions will be extracted at about 50 cm radius. The types of ions to be accelerated are H -, H +, D -1, 3He 2+, 4He 2+, 6Li 3+, and 7Li 3+ with a maximum energy of about 4 MeV for the Li ions and between 2 and 3 MeV for the He ions. A beam current of close to 0.5 mA is anticipated for H + and D + ions and high energy resolution ( ΔE/ E ~ 10 -3) is expected for all ions. The marriage of these two accelerators will give a very wide range of ion implantation energies (for certain ion species) as well as a source of particles for Rutherford backscatter analysis.

Compositional, structural, and optical changes of polyimide implanted by 1.0 MeV Ni+ ions

NASA Astrophysics Data System (ADS)

Mikšová, R.; Macková, A.; Pupikova, H.; Malinský, P.; Slepička, P.; Švorčík, V.

2017-09-01

The ion irradiation leads to deep structural and compositional changes in the irradiated polymers. Ni+ ions implanted polymers were investigated from the structural and compositional changes point of view and their optical properties were investigated. Polyimide (PI) foils were implanted with 1.0 MeV Ni+ ions at room temperature with fluencies of 1.0 × 1013-1.0 × 1015 cm-2 and two different ion implantation currents densities (3.5 and 7.2 nA/cm2). Rutherford Back-Scattering (RBS) and Elastic Recoil Detection Analysis (ERDA) were used for determination of oxygen and hydrogen escape in implanted PI. Atomic Force Microscopy (AFM) was used to follow surface roughness modification after the ion implantation and UV-Vis spectroscopy was employed to check the optical properties of the implanted PI. The implanted PI structural changes were analysed using Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR). High energy Ni-ion implantation causes only a minor release of hydrogen and oxygen close to the polymer sub-surface region in about 60 nm thick layer penetrated by the ion beam; especially at ion fluencies below 1.0 × 1014 cm-2. The mostly pronounced structural changes of the Ni implanted PI were found for the samples implanted above ion fluence 1.0 × 1015 cm-2 and at the ion current density 7.2 nA/cm2, where the optical band gap significantly decreases and the reduction of more complex structural unit of PI monomer was observed.

Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Chang Seouk; School of Mechanical Engineering, Pusan National University, Pusan 609-735; Lee, Byoung-Seob

2016-02-15

The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1–10 mm{sup 2}. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation withmore » an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.« less

Potential release of in vivo trace metals from metallic medical implants in the human body: from ions to nanoparticles--a systematic analytical review.

PubMed

Matusiewicz, Henryk

2014-06-01

Metal ion release from metallic materials, e.g. metallic alloys and pure metals, implanted into the human body in dental and orthopedic surgery is becoming a major cause for concern. This review briefly provides an overview of both metallic alloys and pure metals used in implant materials in dental and orthopedic surgery. Additionally, a short section is dedicated to important biomaterials and their corrosive behavior in both real solutions and various types of media that model human biological fluids and tissues. The present review gives an overview of analytical methods, techniques and different approaches applied to the measurement of in vivo trace metals released into body fluids and tissues from patients carrying metal-on-metal prostheses and metal dental implants. Reference levels of ion concentrations in body fluids and tissues that have been determined by a host of studies are compiled, reviewed and presented in this paper. Finally, a collection of published clinical data on in vivo released trace metals from metallic medical implants is included. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

A new ion-beam laboratory for materials research at the Slovak University of Technology

NASA Astrophysics Data System (ADS)

Noga, Pavol; Dobrovodský, Jozef; Vaňa, Dušan; Beňo, Matúš; Závacká, Anna; Muška, Martin; Halgaš, Radoslav; Minárik, Stanislav; Riedlmajer, Róbert

2017-10-01

An ion beam laboratory (IBL) for materials research has been commissioned recently at the Slovak University of Technology within the University Science Park CAMBO located in Trnava. The facility will support research in the field of materials science, physical engineering and nanotechnology. Ion-beam materials modification (IBMM) as well as ion-beam analysis (IBA) are covered and deliverable ion energies are in the range from tens of keV up to tens of MeV. Two systems have been put into operation. First, a high current version of the HVEE 6 MV Tandetron electrostatic tandem accelerator with duoplasmatron and cesium sputtering ion sources, equipped with two end-stations: a high-energy ion implantation and IBA end-station which includes RBS, PIXE and ERDA analytical systems. Second, a 500 kV implanter equipped with a Bernas type ion source and two experimental wafer processing end-stations. The facility itself, operational experience and first IBMM and IBA experiments are presented together with near-future plans and ongoing development of the IBL.

Development of pulsed processes for the manufacture of solar cells. Quarterly progress report No. 3, April--July 1978

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1978-07-01

Third quarter results under a program to develop ion implantation and specialized, associated processes necessary to achieve automated production of silicon solar cells are described. An ion implantation facility development for solar cell production is described, and a design for an automated production implanter is presented. Also, solar cell development efforts using combined ion implantation and pulsed energy techniques are discussed. Cell performance comparisons have also been made in which junctions and back surface fields were prepared by diffusion and ion implantation. A model is presented to explain the mechanism of ion implantation damage annealing using pulsed energy sources. Functionalmore » requirements have been determined for a pulsed electron beam processor for annealing ion implantation damage at a rate compatible with a 100 milliampere ion implanter. These rates result in a throughput of 100 megawatts of solar cell product per year.« less

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

1995-01-01

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

1995-12-26

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

NASA Astrophysics Data System (ADS)

Nikolaev, A. G.; Yushkov, G. Yu.; Oks, E. M.; Oztarhan, A.; Akpek, A.; Hames-Kocabas, E.; Urkac, E. S.; Brown, I. G.

2014-08-01

Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal-gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the "inverse" concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

Fabrication of poly(vinyl carbazole) waveguides by oxygen ion implantation

NASA Astrophysics Data System (ADS)

Ghailane, Fatima; Manivannan, Gurusamy; Knystautas, Émile J.; Lessard, Roger A.

1995-08-01

Polymer waveguides were fabricated by ion implantation involving poly(vinyl carbazole) films. This material was implanted by oxygen ions (O ++ ) of energies ranging from 50 to 250 keV. The ion doses varied from 1010 to 1015 ions / cm2. The conventional prism-film coupler method was used to determine the waveguiding nature of the implanted and unimplanted films. The increase of the surface refractive index in the implanted layer has been studied by measuring the effective refractive index (neff) for different optical modes. Electron spectroscopy chemical analysis measurements were also performed to assess the effect of ion implantation on the polymer matrix.

Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

DOE PAGES

Young, David L.; Lee, Benjamin G.; Fogel, Derek; ...

2017-09-26

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less

Tribological properties and surface structures of ion implanted 9Cr18Mo stainless steels

NASA Astrophysics Data System (ADS)

Fengbin, Liu; Guohao, Fu; Yan, Cui; Qiguo, Sun; Min, Qu; Yi, Sun

2013-07-01

The polished quenched-and-tempered 9Cr18Mo steels were implanted with N ions and Ti ions respectively at a fluence of 2 × 1017 ions/cm2. The mechanical properties of the samples were investigated by using nanoindenter and tribometer. The results showed that the ion implantations would improve the nanohardness and tribological property, especially N ion implantation. The surface analysis of the implanted samples was carried out by using XRD, XPS and AES. It indicated that the surface exhibits graded layers after ion implantation. For N ion implantation, the surface about 20 nm thickness is mainly composed of supersaturated interstitial N solid solution, oxynitrides, CrxCy phase and metal nitrides. In the subsurface region, the metal nitrides dominate and the other phases disappear. For Ti ion implantation, the surface of about 20 nm thickness is mainly composed of titanium oxides and carbon amorphous phase, the interstitial solid solution of Ti in Fe is abundant in the subsurface region. The surface components and structures have significant contributions to the improved mechanical properties.

Ion implantation of solar cell junctions without mass analysis

NASA Technical Reports Server (NTRS)

Fitzgerald, D.; Tonn, D. G.

1981-01-01

This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

A retrospective study on related factors affecting the survival rate of dental implants

PubMed Central

Kang, Jeong-Kyung; Lee, Ki; Lee, Yong-Sang; Park, Pil-Kyoo

2011-01-01

PURPOSE The aim of this retrospective study is to analyze the relationship between local factors and survival rate of dental implant which had been installed and restored in Seoul Veterans Hospital dental center for past 10 years. And when the relationship is found out, it could be helpful to predict the prognosis of dental implants. MATERIALS AND METHODS A retrospective study of patients receiving root-shaped screw-type dental implants placed from January 2000 to December 2009 was conducted. 6385 implants were placed in 3755 patients. The following data were collected from the dental records and radiographs: patient's age, gender, implant type and surface, length, diameter, location of implant placement, bone quality, prosthesis type. The correlations between these data and survival rate were analyzed. Statistical analysis was performed with the use of Kaplan-Meier analysis, Chi-square test and odds ratio. RESULTS In all, 6385 implants were placed in 3755 patients (3120 male, 635 female; mean age 65 ± 10.58 years). 108 implants failed and the cumulative survival rate was 96.33%. There were significant differences in age, implant type and surface, length, location and prosthesis type (P<.05). No significant differences were found in relation to the following factors: gender, diameter and bone quality (P>.05). CONCLUSION Related factors such as age, implant type, length, location and prosthesis type had a significant effect on the implant survival. PMID:22259704

Passivation of uranium towards air corrosion by N 2+ and C + ion implantation

NASA Astrophysics Data System (ADS)

Arkush, R.; Mintz, M. H.; Shamir, N.

2000-10-01

The passivation of uranium surfaces against air corrosion, by ion implantation processes was studied, using surface analysis methods. Implanting 45 keV N +2 and C + ions produces thin modified surface layers with gradual gradients of the corresponding compounds (i.e., nitrides and carbides, respectively), which avoid the formation of discontinuous interfaces typical to coatings. Such gradual interfaces impart excellent mechanical stability and adhesion to the modified layers, in spite of the large misfit between the metal substrate and the implantation on induced compounds. It turns out that these layers provide an almost absolute protection against air corrosion. A rapid initial stage of oxidation of the modified surface layers takes place, forming very thin protective oxidation zones (1-4 nm thick), which practically stop further air oxidation for years. The mechanism of the initial oxidation stage of the modified layers seems to vary with the type of surface (i.e., either nitrides or carbides). However, in any case the protection ability of the formed oxidation products is excellent, probably due to the close match between these compounds and the underlying nitrides or carbides.

The production of ultra-high purity single isotopes or tailored isotope mixtures by ICP-MS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liezers, Martin; Farmer, Orville T.; Dion, Michael P.

2015-01-01

We report the development and testing of a simple collector arrangement for a commercial quadrupole ICP-MS that for the first time has been used to produce small quantities of highly enriched (>99.99%) single isotopes, with deposition rates >10 ng/hour. The collector assembly replaces the standard instrument detector allowing for implantation with simultaneous monitoring of the incident ion current. Even under zero bias implant conditions, low energy (<10 eV), ion collection efficiency was observed to be very high ~99%. 151Eu ion currents of 0.1-0.5 nA were collected on a simple, planar foil without resorting to any type of cup configuration. Recoverymore » of the enriched isotope from such foils is much simpler than from a more complex cup configuration. High rejection of adjacent mass isotopes was demonstrated by selectively implanting 167Er without any discernible co-implantation of 166Er and 168Er. The important analytical possibilities of the new approach to isotope ratio measurement, tracer purification and radiation measurements are discussed.« less

Platelet adhesion and plasma protein adsorption control of collagen surfaces by He + ion implantation

NASA Astrophysics Data System (ADS)

Kurotobi, K.; Suzuki, Y.; Nakajima, H.; Suzuki, H.; Iwaki, M.

2003-05-01

He + ion implanted collagen-coated tubes with a fluence of 1 × 10 14 ions/cm 2 were exhibited antithrombogenicity. To investigate the mechanisms of antithrombogenicity of these samples, plasma protein adsorption assay and platelet adhesion experiments were performed. The adsorption of fibrinogen (Fg) and von Willebrand factor (vWf) was minimum on the He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2. Platelet adhesion (using platelet rich plasma) was inhibited on the He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and was accelerated on the untreated collagen and ion implanted collagen with fluences of 1 × 10 13, 1 × 10 15 and 1 × 10 16 ions/cm 2. Platelet activation with washed platelets was observed on untreated collagen and He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and was inhibited with fluences of 1 × 10 13, 1 × 10 15 and 1 × 10 16 ions/cm 2. Generally, platelets can react with a specific ligand inside the collagen (GFOGER sequence). The results of platelets adhesion experiments using washed platelets indicated that there were no ligands such as GFOGER on the He + ion implanted collagen over a fluence of 1 × 10 13 ions/cm 2. On the 1 × 10 14 ions/cm 2 implanted collagen, no platelet activation was observed due to the influence of plasma proteins. From the above, it is concluded that the decrease of adsorbed Fg and vWf caused the antithrombogenicity of He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and that plasma protein adsorption took an important role repairing the graft surface.

Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holland, O.W.; El-Ghor, M.K.; White, C.W.

1989-01-01

Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ionmore » fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 /times/ 10/sup 14/ cm/sup /minus/2/) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs.« less

Biofunctionalization of silicone rubber with microgroove-patterned surface and carbon-ion implantation to enhance biocompatibility and reduce capsule formation.

PubMed

Lei, Ze-Yuan; Liu, Ting; Li, Wei-Juan; Shi, Xiao-Hua; Fan, Dong-Li

Silicone rubber implants have been widely used to repair soft tissue defects and deformities. However, poor biocompatibility can elicit capsule formation, usually resulting in prosthesis contracture and displacement in long-term usage. To overcome this problem, this study investigated the properties of silicone rubber materials with or without a microgroove-patterned surface and with or without carbon (C)-ion implantation. Atomic force microscopy, X-ray photoelectron spectroscopy, and a water contact angle test were used to characterize surface morphology and physicochemical properties. Cytocompatibility was investigated by a cell adhesion experiment, immunofluorescence staining, a Cell Counting Kit-8 assay, and scanning electron microscopy in vitro. Histocompatibility was evaluated by studying the inflammatory response and fiber capsule formation that developed after subcutaneous implantation in rats for 7 days, 15 days, and 30 days in vivo. Parallel microgrooves were found on the surfaces of patterned silicone rubber (P-SR) and patterned C-ion-implanted silicone rubber (PC-SR). Irregular larger peaks and deeper valleys were present on the surface of silicone rubber implanted with C ions (C-SR). The silicone rubber surfaces with microgroove patterns had stable physical and chemical properties and exhibited moderate hydrophobicity. PC-SR exhibited moderately increased dermal fibroblast cell adhesion and growth, and its surface microstructure promoted orderly cell growth. Histocompatibility experiments on animals showed that both the anti-inflammatory and antifibrosis properties of PC-SR were slightly better than those of the other materials, and there was also a lower capsular contracture rate and less collagen deposition around implants made from PC-SR. Although the surface chemical properties, dermal fibroblast cell growth, and cell adhesion were not changed by microgroove pattern modification, a more orderly cell arrangement was obtained, leading to enhanced biocompatibility and reduced capsule formation. Thus, this approach to the modification of silicone rubber, in combination with C-ion implantation, should be considered for further investigation and application.

Evaluation of stabilization techniques for ion implant processing

NASA Astrophysics Data System (ADS)

Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Narcy, Mark E.; Livesay, William R.

1999-06-01

With the integration of high current ion implant processing into volume CMOS manufacturing, the need for photoresist stabilization to achieve a stable ion implant process is critical. This study compares electron beam stabilization, a non-thermal process, with more traditional thermal stabilization techniques such as hot plate baking and vacuum oven processing. The electron beam processing is carried out in a flood exposure system with no active heating of the wafer. These stabilization techniques are applied to typical ion implant processes that might be found in a CMOS production process flow. The stabilization processes are applied to a 1.1 micrometers thick PFI-38A i-line photoresist film prior to ion implant processing. Post stabilization CD variation is detailed with respect to wall slope and feature integrity. SEM photographs detail the effects of the stabilization technique on photoresist features. The thermal stability of the photoresist is shown for different levels of stabilization and post stabilization thermal cycling. Thermal flow stability of the photoresist is detailed via SEM photographs. A significant improvement in thermal stability is achieved with the electron beam process, such that photoresist features are stable to temperatures in excess of 200 degrees C. Ion implant processing parameters are evaluated and compared for the different stabilization methods. Ion implant system end-station chamber pressure is detailed as a function of ion implant process and stabilization condition. The ion implant process conditions are detailed for varying factors such as ion current, energy, and total dose. A reduction in the ion implant systems end-station chamber pressure is achieved with the electron beam stabilization process over the other techniques considered. This reduction in end-station chamber pressure is shown to provide a reduction in total process time for a given ion implant dose. Improvements in the ion implant process are detailed across several combinations of current and energy.

Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

NASA Astrophysics Data System (ADS)

Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

2018-06-01

Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

InP shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Keavney, Christopher; Spitzer, Mark B.; Vernon, Stanley M.; Haven, Victor E.; Augustine, Godfrey

1989-01-01

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Are clinical findings of systemic titanium dispersion following implantation explained by available in vitro evidence? An evidence-based analysis.

PubMed

Curtin, Justin Paul; Wang, Minji

2017-08-01

Although the presence of titanium wear particles released into tissues is known to induce local inflammation following the therapeutic implantation of titanium devices into humans, the role that titanium ions play in adverse tissue responses has received little attention. Support that ongoing titanium ion release occurs is evidenced by the presence of ionic titanium bound to transferrin in blood, and ongoing excretion in the urine of patients with titanium devices. However, as reports documenting the presence of titanium within tissues do not distinguish between particulate and ionic forms due to technical challenges, the degree to which ionic titanium is released into tissues is unknown. To determine the potential for titanium ion release into tissues, this study evaluates available in vitro evidence relating to the release of ionic titanium under physiological conditions. This is a systematic literature review of studies reporting titanium ion release into solutions from titanium devices under conditions replicating the interstitial pH and constituents. Inclusion and exclusion criteria were defined. Of 452 articles identified, titanium ions were reported in nine media relevant to human biology in seventeen studies. Only one study, using human serum replicated both physiological pH and the concentration of constituents while reporting the presence of titanium ions. While there is insufficient information to explain the factors that contribute to the presence of titanium ions in serum of humans implanted with titanium devices, currently available information suggests that areas of future inquiry include the role of transferrin and organic acids.

Ohmic contacts to n-GaN formed by ion-implanted Si into p-GaN

NASA Astrophysics Data System (ADS)

Bao, Xichang; Xu, Jintong; Zhang, Wenjing; Wang, Ling; Chu, Kaihui; Li, Chao; Li, Xiangyang

2009-07-01

In this paper, we report the ohmic contact to n-GaN fabricated by implanting silicon into Mg-doped GaN using an alloy of Ti/Al/Ti/Au metallization. The used materials were grown on (001) sapphire substrates by metal-organic chemical-vapor deposition (MOCVD). The layer structure was comprised of a GaN buffer layer and followed by a 2 μm thickness Mg-doped GaN (Na=5×1017cm-3) and then double silicon implantation was performed in order to convert p-type GaN into n-type GaN films. The as-implanted samples were then thermal annealed at 1150 °C for 5 min in N2 ambient. The carrier concentration and Hall mobility were 3.13×1018 cm3 and 112 cm2/ (VÂ.s) measured by Hall method. Multilayer electrode of Ti (50 nm)/Al (50 nm)/Ti (30 nm)/Au (30 nm) was deposited on n-GaN using an electron-beam evaporation and contacts were formed by a N2 annealing technique ranging from 600 to 900 °C. After annealing lower than 700 °C, the contacts exhibited a rectifying behavior and became ohmic contact only after high temperature processes (>=700 °C). Specific contact resistance was as low as 9.58×10-4 ΩÂ.cm2 after annealing at 800 °C for 60 seconds. While annealing temperature is higher than 800 °C, the specific contact resistance becomes worse. This phenomenon is caused by the surface morphology degradation.

Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis

NASA Astrophysics Data System (ADS)

Komarov, F.; Vlasukova, L.; Greben, M.; Milchanin, O.; Zuk, J.; Wesch, W.; Wendler, E.; Togambaeva, A.

2013-07-01

We have studied the formation of InSb and InAs precipitates with sizes of several nanometers in Si and SiO2/Si by means of implantation of (Sb + In) or (As + In) ions with energies from 170 to 350 keV and fluencies from 2.8 to 3.5 × 1016 cm-2 at 500 °C and subsequent annealing at 1050-1100 °C for 3-30 min. RBS, TEM/TED, RS and PL techniques were employed to characterize the implanted layers. A broad band in the region of 1.2-1.6 μm has been registered in the low-temperature PL spectra of both (Sb + In) and (As + In) implanted and annealed silicon crystals. It was shown that structural and optical properties of oxidized silicon crystals strongly depend on type of implanted species in silicon crystals.

Surface and local electronic structure modification of MgO film using Zn and Fe ion implantation

NASA Astrophysics Data System (ADS)

Singh, Jitendra Pal; Lim, Weon Cheol; Lee, Jihye; Song, Jonghan; Lee, Ik-Jae; Chae, Keun Hwa

2018-02-01

Present work is motivated to investigate the surface and local electronic structure modifications of MgO films implanted with Zn and Fe ions. MgO film was deposited using radio frequency sputtering method. Atomic force microscopy measurements exhibit morphological changes associated with implantation. Implantation of Fe and Zn ions leads to the reduction of co-ordination geometry of Mg2+ ions in host lattice. The effect is dominant at bulk of film rather than surface as the large concentration of implanted ions resides inside bulk. Moreover, the evidences of interaction among implanted ions and oxygen are not being observed using near edge fine structure measurements.

Au5+ ion implantation induced structural phase transitions probed through structural, microstructural and phonon properties in BiFeO3 ceramics, using synergistic ion beam energy

NASA Astrophysics Data System (ADS)

Dey, Ranajit; Bajpai, P. K.

2018-04-01

Implanted Au5+-ion-induced modification in structural and phonon properties of phase pure BiFeO3 (BFO) ceramics prepared by sol-gel method was investigated. These BFO samples were implanted by 15.8 MeV ions of Au5+ at various ion fluence ranging from 1 × 1014 to 5 × 1015 ions/cm2. Effect of Au5+ ions' implantation is explained in terms of structural phase transition coupled with amorphization/recrystallization due to ion implantation probed through XRD, SEM, EDX and Raman spectroscopy. XRD patterns show broad diffuse contributions due to amorphization in implanted samples. SEM images show grains collapsing and mounds' formation over the surface due to mass transport. The peaks of the Raman spectra were broadened and also the peak intensities were decreased for the samples irradiated with 15.8 MeV Au5+ ions at a fluence of 5 × 1015 ion/cm2. The percentage increase/decrease in amorphization and recrystallization has been estimated from Raman and XRD data, which support the synergistic effects being operative due to comparable nuclear and electronic energy losses at 15.8 MeV Au5+ ion implantation. Effect of thermal treatment on implanted samples is also probed and discussed.

Modification of polyvinyl alcohol surface properties by ion implantation

NASA Astrophysics Data System (ADS)

Pukhova, I. V.; Kurzina, I. A.; Savkin, K. P.; Laput, O. A.; Oks, E. M.

2017-05-01

We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 1014, 1 × 1015 and 1 × 1016 ion/cm2 and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (sbnd Cdbnd O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karabeshkin, K. V., E-mail: yanikolaus@yandex.ru; Karaseov, P. A.; Titov, A. I.

2016-08-15

The depth distributions of structural damage induced in Si at room temperature by the implantation of P and PF{sub 4} with energies from 0.6 to 3.2 keV/amu are experimentally studied in a wide range of doses. It is found that, in all cases, the implantation of molecular PF{sub 4} ions forms practically single-mode defect distributions, with maximum at the target surface. This effect is caused by an increase in the generation of primary defects at the surface of the target. Individual cascades formed by atoms comprising molecule effectively overlap in the surface vicinity; this overlap gives rise to nonlinear processesmore » in combined cascades due to a high density of displacements in such cascades. Quantitative estimation of increase of effectiveness of point defect generation by PF{sub 4} ions in respect to P ions is done on the base of experimental data.« less

Controlled spontaneous emission in erbium-doped microphotonic materials

NASA Astrophysics Data System (ADS)

Kalkman, Jeroen

2005-03-01

Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.

Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties

NASA Technical Reports Server (NTRS)

Henderson, D. O.; My, R.; Tung, Y.; Ueda, A.; Zhu, J.; Collins, W. E.; Hall, Christopher

1995-01-01

One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.

Influence of biocompatible metal ions (Ag, Fe, Y) on the surface chemistry, corrosion behavior and cytocompatibility of Mg-1Ca alloy treated with MEVVA.

PubMed

Liu, Yang; Bian, Dong; Wu, Yuanhao; Li, Nan; Qiu, Kejin; Zheng, Yufeng; Han, Yong

2015-09-01

Mg-1Ca samples were implanted with biocompatible alloy ions Ag, Fe and Y respectively with a dose of 2×10(17)ionscm(-2) by metal vapor vacuum arc technique (MEVVA). The surface morphologies and surface chemistry were investigated by SEM, AES and XPS. Surface changes were observed after all three kinds of elemental ion implantation. The results revealed that the modified layer was composed of two sublayers, including an outer oxidized layer with mixture of oxides and an inner implanted layer, after Ag and Fe ion implantation. Y ion implantation induced an Mg/Ca-deficient outer oxidized layer and the distribution of Y along with depth was more homogeneous. Both electrochemical test and immersion test revealed accelerated corrosion rate of Ag-implanted Mg-1Ca and Fe-implanted Mg-1Ca, whereas Y ion implantation showed a short period of protection since enhanced corrosion resistance was obtained by electrochemical test, but accelerated corrosion rate was found by long period immersion test. Indirect cytotoxicity assay indicated good cytocompatibility of Y-implanted Mg-1Ca. Moreover, the corresponding corrosion mechanisms involving implanting ions into magnesium alloys were proposed, which might provide guidance for further application of plasma ion implantation to biodegradable Mg alloys. Copyright © 2015 Elsevier B.V. All rights reserved.

Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

NASA Astrophysics Data System (ADS)

Xu, Juan; Ding, Gang; Li, Jinlu; Yang, Shenhui; Fang, Bisong; Sun, Hongchen; Zhou, Yanmin

2010-10-01

While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased ( p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.

Selective laser melting porous metallic implants with immobilized silver nanoparticles kill and prevent biofilm formation by methicillin-resistant Staphylococcus aureus.

PubMed

van Hengel, Ingmar A J; Riool, Martijn; Fratila-Apachitei, Lidy E; Witte-Bouma, Janneke; Farrell, Eric; Zadpoor, Amir A; Zaat, Sebastian A J; Apachitei, Iulian

2017-09-01

Implant-associated infection and limited longevity are two major challenges that orthopedic devices need to simultaneously address. Additively manufactured porous implants have recently shown tremendous promise in improving bone regeneration and osseointegration, but, as any conventional implant, are threatened by infection. In this study, we therefore used rational design and additive manufacturing in the form of selective laser melting (SLM) to fabricate porous titanium implants with interconnected pores, resulting in a 3.75 times larger surface area than corresponding solid implants. The SLM implants were biofunctionalized by embedding silver nanoparticles in an oxide surface layer grown using plasma electrolytic oxidation (PEO) in Ca/P-based electrolytes. The PEO layer of the SLM implants released silver ions for at least 28 days. X-ray diffraction analysis detected hydroxyapatite on the SLM PEO implants but not on the corresponding solid implants. In vitro and ex vivo assays showed strong antimicrobial activity of these novel SLM PEO silver-releasing implants, without any signs of cytotoxicity. The rationally designed SLM porous implants outperformed solid implants with similar dimensions undergoing the same biofunctionalization treatment. This included four times larger amount of released silver ions, two times larger zone of inhibition, and one additional order of magnitude of reduction in numbers of CFU in an ex vivo mouse infection model. Copyright © 2017 Elsevier Ltd. All rights reserved.

Fiber Optic Multimode Development Study.

DTIC Science & Technology

1982-12-01

techniques. These techniques include chemical vapor deposition, ion exchange and diffusion, dip coating, ion implantation, and laser heating . Three...8i63 p NCLASSIFIED F/G 2916 N S .... .... 2. m. i pa 1 1 1. 1111 0i I 11112.0 L4 2,2 MICROCOPY RESOLUTION TEST CHART NATIONAL BUREAU OF STANDARSI 963...NUMBER RADC-TR-82 -315 i, /2S- 3 W 4. TITLE (and Subtitle) LTYP OERPRT&P IOnEEFinai oTec hnica ILeportat Jul 80 - Jul 81 FIBER OPTIC MULTIMODE DEVELOPMENT

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.

2016-12-15

The parameters of multilayer Cd{sub x}Hg{sub 1–x}Te heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p{sup +}–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 10{sup 15} cm{sup –3}. The temperature dependences ofmore » the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n{sup +}–p-type diodes.« less

A simple ion implanter for material modifications in agriculture and gemmology

NASA Astrophysics Data System (ADS)

Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M. W.; Suwankosum, R.; Rattanarin, S.; Yu, L. D.

2015-12-01

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X-Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

Development of pulsed processes for the manufacture of solar cells

NASA Technical Reports Server (NTRS)

Minnucci, J. A.

1978-01-01

The results of a 1-year program to develop the processes required for low-energy ion implantation for the automated production of silicon solar cells are described. The program included: (1) demonstrating state-of-the-art ion implantation equipment and designing an automated ion implanter, (2) making efforts to improve the performance of ion-implanted solar cells to 16.5 percent AM1, (3) developing a model of the pulse annealing process used in solar cell production, and (4) preparing an economic analysis of the process costs of ion implantation.

Optical reflectivity study of silicon ion implanted poly(methyl methacrylate)

NASA Astrophysics Data System (ADS)

Hadjichristov, Georgi B.; Stefanov, Ivan L.; Florian, Bojana I.; Blaskova, Gergana D.; Ivanov, Victor G.; Faulques, Eric

2009-11-01

The optical reflectivity (both specular and off-specular) of poly(methyl methacrylate) (PMMA) implanted with silicon ions (Si +) at energy of 50 keV, is studied in the spectral range 0.25-25 μm. The effect from the Si + implantation on the reflectivity of two PMMA materials is examined in the dose range from 10 14 to 10 17 ions/cm 2 and is linked to the structure formed in this ion implanted plastic. As compared to the pristine PMMA, an enhancement of the reflectivity of Si + implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation. The ion-produced subsurface organic interface is also probed by laser-induced thermo-lens.

Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yong Deok; Oh, Seung Kyu; Park, Min Joo

Highlights: • A nitrogen implanted current-blocking layer was successfully demonstrated. • Light-extraction efficiency and radiant intensity was increased by more than 20%. • Ion implantation was successfully implemented in GaN based light-emitting diodes. - Abstract: GaN-based light emitting diodes (LEDs) with a nitrogen implanted current-blocking layer (CBL) were successfully demonstrated for improving the light extraction efficiency (LEE) and radiant intensity. The LEE and radiant intensity of the LEDs with a shallow implanted CBL with nitrogen was greatly increased by more than 20% compared to that of a conventional LED without the CBL due to an increase in the effective currentmore » path, which reduces light absorption at the thick p-pad electrode. Meanwhile, deep implanted CBL with a nitrogen resulted in deterioration of the LEE and radiant intensity because of formation of crystal damage, followed by absorption of the light generated at the multi-quantum well(MQW). These results clearly suggest that ion implantation method, which is widely applied in the fabrication of Si based devices, can be successfully implemented in the fabrication of GaN based LEDs by optimization of implanted depth.« less

Worse health-related quality of life and hip function in female patients with elevated chromium levels

PubMed Central

Hussey, Daniel K; Madanat, Rami; Donahue, Gabrielle S; Rolfson, Ola; Muratoglu, Orhun K; Malchau, Henrik

2016-01-01

Background and purpose Blood metal ion levels can be an indicator for detecting implant failure in metal-on-metal (MoM) hip arthroplasties. Little is known about the effect of bilateral MoM implants on metal ion levels and patient-reported outcomes. We compared unilateral patients and bilateral patients with either an ASR hip resurfacing (HR) or an ASR XL total hip replacement (THR) and investigated whether cobalt or chromium was associated with a broad spectrum of patient outcomes. Patients and methods From a registry of 1,328 patients enrolled in a multicenter prospective follow-up of the ASR Hip System, which was recalled in 2010, we analyzed data from 659 patients (311 HR, 348 THR) who met our inclusion criteria. Cobalt and chromium blood metal ion levels were measured and a 21-item patient-reported outcome measures (PROMs) questionnaire was used mean 6 years after index surgery. Results Using a minimal threshold of ≥7 ppb, elevated chromium ion levels were found to be associated with worse health-related quality of life (HRQoL) (p < 0.05) and hip function (p < 0.05) in women. These associations were not observed in men. Patients with a unilateral ASR HR had lower levels of cobalt ions than bilateral ASR HR patients (p < 0.001) but similar levels of chromium ions (p = 0.09). Unilateral ASR XL THR patients had lower chromium and cobalt ion levels (p < 0.005) than bilateral ASR XL THR patients. Interpretation Chromium ion levels of ≥7 ppb were associated with reduced functional outcomes in female MoM patients. PMID:27459602

Carbon and metal-carbon implantations into tool steels for improved tribological performance

NASA Astrophysics Data System (ADS)

Hirvonen, J.-P.; Harskamp, F.; Torri, P.; Willers, H.; Fusari, A.; Gibson, N.; Haupt, J.

1997-05-01

The high-fluence implantation of carbon and dual implantations of metal-metalloid pairs into steels with different microstructures are briefly reviewed. A previously unexamined system, the implantation of Si and C into two kinds of tool steels, M3 and D2, have been studied in terms of microstructure and tribological performance. In both cases ion implantation transfers a surface into an amorphous layer. However, the tribological behavior of these two materials differs remarkably: in the case of ion-implanted M3 a reduction of wear in a steel pin is observed even at high pin loads, whereas in the case of ion-implanted D2 the beneficial effects of ion implantation were limited to the lowest pin load. The importance of an initial phase at the onset of sliding is emphasized and a number of peculiarities observed in ion-implanted M3 steel are discussed.

Optical characterization of poly(methyl methacrylate) implanted with low energy ions

NASA Astrophysics Data System (ADS)

Gupta, Renu; Kumar, Vijay; Goyal, Parveen Kumar; Kumar, Shyam

2012-12-01

The samples of poly(methyl methacrylate) (PMMA) were subjected to 100 keV N+ and Ar+ ion implantation up to a maximum fluence of 2 × 1016 ions/cm2. The effect of ion implantation on the optical energy gap and the refractive index has been studied through UV-visible spectroscopy. The results clearly indicate a decrease in the values of optical energy gap and an increase in the values of refractive index as an effect of ion implantation corresponding to both of the ions. It has also been observed that the changes induced by the implanted ions are more pronounced for N+ ions in comparison to Ar+ ions. This variation has been correlated with the calculated ranges of these ions in PMMA polymer using Stopping and Range of Ions in Matter (SRIM) code. Finally, an attempt has been made to correlate all the observed changes with the induced structural changes as revealed through Raman spectroscopy.

Self-organized surface ripple pattern formation by ion implantation

NASA Astrophysics Data System (ADS)

Hofsäss, Hans; Zhang, Kun; Bobes, Omar

2016-10-01

Ion induced ripple pattern formation on solid surfaces has been extensively studied in the past and the theories describing curvature dependent ion erosion as well as redistribution of recoil atoms have been very successful in explaining many features of the pattern formation. Since most experimental studies use noble gas ion irradiation, the incorporation of the ions into the films is usually neglected. In this work we show that the incorporation or implantation of non-volatile ions also leads to a curvature dependent term in the equation of motion of a surface height profile. The implantation of ions can be interpreted as a negative sputter yield; and therefore, the effect of ion implantation is opposite to the one of ion erosion. For angles up to about 50°, implantation of ions stabilizes the surface, whereas above 50°, ion implantation contributes to the destabilization of the surface. We present simulations of the curvature coefficients using the crater function formalism and we compare the simulation results to the experimental data on the ion induced pattern formation using non-volatile ions. We present several model cases, where the incorporation of ions is a crucial requirement for the pattern formation.

Multiple ion beam irradiation for the study of radiation damage in materials

NASA Astrophysics Data System (ADS)

Taller, Stephen; Woodley, David; Getto, Elizabeth; Monterrosa, Anthony M.; Jiao, Zhijie; Toader, Ovidiu; Naab, Fabian; Kubley, Thomas; Dwaraknath, Shyam; Was, Gary S.

2017-12-01

The effects of transmutation produced helium and hydrogen must be included in ion irradiation experiments to emulate the microstructure of reactor irradiated materials. Descriptions of the criteria and systems necessary for multiple ion beam irradiation are presented and validated experimentally. A calculation methodology was developed to quantify the spatial distribution, implantation depth and amount of energy-degraded and implanted light ions when using a thin foil rotating energy degrader during multi-ion beam irradiation. A dual ion implantation using 1.34 MeV Fe+ ions and energy-degraded D+ ions was conducted on single crystal silicon to benchmark the dosimetry used for multi-ion beam irradiations. Secondary Ion Mass Spectroscopy (SIMS) analysis showed good agreement with calculations of the peak implantation depth and the total amount of iron and deuterium implanted. The results establish the capability to quantify the ion fluence from both heavy ion beams and energy-degraded light ion beams for the purpose of using multi-ion beam irradiations to emulate reactor irradiated microstructures.

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Weicheng; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixedmore » conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.« less

Multiple Ion Implantation Effects on Wear and Wet Ability of Polyethylene Based Polymers

NASA Astrophysics Data System (ADS)

Torrisi, L.; Visco, A. M.; Campo, N.

2004-10-01

Polyethylene based polymers were ion implanted with multiple irradiations of different ions (N+, Ar+ and Kr+) at energies between 30 keV and 300 keV and doses ranging between 1013 and 1016 ions/cm2. The ion implantation dehydrogenises the polyethylene inducing cross-link effects in the residual polymer carbons. At high doses the irradiated surface show properties similar to graphite surfaces. The depth of the modified layers depends on the ion range in polyethylene at the incident ion energy. The chemical modification depends on the implanted doses and on the specie of the incident ions. A "pin-on-disc" machine was employed to measure the polymer wear against AISI-316 L stainless steel. A "contact-angle-test" machine was employed to measure the wet ability of the polymer surface for 1 μl pure water drop. Measurements demonstrate that the multiple ion implantation treatments decrease the surface wear and the surface wetting and produce a more resistant polymer surface. The properties of the treated surfaces improves the polymer functionality for many bio-medical applications, such as those relative to the polyethylene friction discs employed in knee and hip prosthesis joints. The possibility to use multiply ion implantations of polymers with traditional ion implanters and with laser ion sources producing plasmas is investigated.

Influence of High-Power Pulsed IR Laser Radiation on the Electrophysical Properties of Cd x Hg1- x Те Heteroepitaxial Layers

NASA Astrophysics Data System (ADS)

Talipov, N. Kh.

2013-05-01

Results of investigations into the electrophysical properties of p- and n-type Cd x Hg1- x Te heteroepitaxial layers grown by molecular beam and liquid phase epitaxy methods after exposure to high-power pulsed IR radiation of solid-state Nd3+:YAG and chemical DF lasers at wavelengths of 1.06 and 3.8-4.2 μm, respectively, are presented. It is demonstrated that the main types of defects resulting from pulsed irradiation are mercury vacancies that play the role of acceptors in this material. The spatial distribution of generated mercury vacancies depends on the intensity and wavelength of laser radiation: the defects generated by pulses of the Nd3+:YAG laser are concentrated only near the surface, whereas DF-laser radiation creates defects in the entire volume of the heteroepitaxial structures. It is established that irradiation with the Nd3+:YAG laser of the p-Cd x Hg1- x Te heteroepitaxial layers implanted by boron ions leads to the activation of implanted boron atoms as a result of melting and recrystallization of the irradiated surface layer.

"Not all breast implants are equal: a 13-year review of implant longevity and reasons for explantation".

PubMed

Van Slyke, Aaron C; Carr, Michael; Carr, Nicholas J

2018-06-04

Augmentation mammoplasty is the most common aesthetic procedure. Textured implants control implant position and have improved capsular contracture rates; however, the impact of texturing on longevity and clinical findings at explantation is unclear. All cases of explantation between January 2005 - April 2017 from an aesthetic practice were reviewed retrospectively. Patient demographics, implant characteristics, time-to-explantation, and clinical presentation and intraoperative findings at explantation were analyzed. 539 breast implants were explanted during the study period: 249 saline, 147 smooth gel, 123 Biocell, and 20 other nonaggressively textured breast implants. Average time from placement to explantation was 7.5 years, 5.6 years, 4.9 years, and 4.0 years for saline, other textured, smooth gel, and Biocell implants, respectively (p-value = 3.25e-08). The percentage of implants removed associated with implant performance failure was 50.3%, 57.5%, 75.0%, and 85.4% for smooth gel, saline, other textured, and Biocell implants, respectively (p-value = 7.25e-09). 21.1% of Biocell implants versus 1.5% of all other implants presented with pain (p-value = 2.71e-15). 45 Biocell implants had double capsules; this phenomenon was not observed with any other implant type (p-value = 5.85e-37). Seven Biocell implants had late seromas, compared to three late seromas with any other implant type (p-value = 0.0013). Here, we provide evidence that Biocell implants have the shortest time-to-explantation and the highest proportion of implants associated with implant performance failure. This information should complement the informed consent process when selecting an appropriate implant.

Effect of C-implantation on Nerve-Cell Attachment to Polystyrene Films

NASA Astrophysics Data System (ADS)

Sommani, Piyanuch; Tsuji, Hiroshi; Kitamura, Tsuyoshi; Hattori, Mitsutaka; Yamada, Tetsuya; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo

The surfaces of the polystyrene films spin-coated on glass were modified by carbon negative-ion implantation with various ion doses from 1×1014 to 3×1016 ions/cm2 at 5 and 10 keV. The implantation conditions with and without a pattering mask were for investigation of the cell-attachment properties and for evaluation of surface physical properties of contact angle, respectively. The contact angles of modified surface were investigated by pure water drop and air bubble method. The lowest angle value of the implanted films at 5 and 10 keV were approximately 72° at 3×1015 ions/cm2 after dipping in the de-ionized water for 2 hours. The lowering of contact angles on C-implanted surfaces when increase the ion dose is due to formation of the OH and C-O bonds. Nerve-cell-attachment properties of modified surface were investigated by the nerve-like cell of rat adrenal pheochromocytoma (PC12h) in vitro. After 2 days culture of the PC12h cells, no cells attached on the polystyrene films implanted with low ion dose from 1×1014 to 3×1014 ions/cm2. On the polystyrene films implanted with the dose order of 1015 ions/cm2, the cells selectively attached only on the implanted region. Whereas on the surfaces implanted with high dose such as 1×1016 and 3×1016 ions/cm2 mostly cells attached on the implanted region, and some attached on the unimplanted region, as well as cells were abnormal in shape and large size. Therefore, the suitable dose implantation for the selective-attachment of nerve-cells on the polystyrene films implanted at 5 and 10 keV were obtained around the dose order of 1015 ions/cm2, and the best condition for the selective attachment properties was at 3×1015 ions/cm2 corresponding to the lowest contact angle.

Cobalt poisoning

MedlinePlus

... This type of implant is an artificial hip socket that is created by fitting a metal ball ... particles (ions) can get released into the hip socket and sometimes the bloodstream, causing cobalt toxicity. This ...

Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Müller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian

2014-09-08

The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implantedmore » phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.« less

Load Fatigue Performance Evaluation on Two Internal Tapered Abutment-Implant Connection Implants Under Different Screw Tightening Torques.

PubMed

Jeng, Ming-Dih; Liu, Po-Yi; Kuo, Jia-Hum; Lin, Chun-Li

2017-04-01

This study evaluates the load fatigue performance of different abutment-implant connection implant types-retaining-screw (RS) and taper integrated screwed-in (TIS) types under 3 applied torque levels based on the screw elastic limit. Three torque levels-the recommended torque (25 Ncm), 10% less, and 10% more than the ratio of recommended torque to screw elastic limits of different implants were applied to the implants to perform static and dynamic testing according to the ISO 14801 method. Removal torque loss was calculated for each group after the endurance limitation was reached (passed 5 × 10 6 cycles) in the fatigue test. The static fracture resistance results showed that the fracture resistance in the TIS-type implant significantly increased (P < .05) when the abutment screw was inserted tightly. The dynamic testing results showed that the endurance limitations for the RS-type implant were 229 N, 197 N, and 224 N and those for the TIS-type implant were 322 N, 364 N, and 376 N when the screw insertion torques were applied from low to high. The corresponding significant (P < .05) removal torque losses for the TIS-type implant were 13.2%, 5.3%, and 2.6% but no significant difference was found for the RS-type implant. This study concluded that the static fracture resistance and dynamic endurance limitation of the TIS-type implant (1-piece solid abutment) increased when torque was applied more tightly on the screw. Less torque loss was also found when increasing the screw insertion torque.

Nanostructured titanate with different metal ions on the surface of metallic titanium: a facile approach for regulation of rBMSCs fate on titanium implants.

PubMed

Ren, Na; Li, Jianhua; Qiu, Jichuan; Sang, Yuanhua; Jiang, Huaidong; Boughton, Robert I; Huang, Ling; Huang, Wei; Liu, Hong

2014-08-13

Titanium (Ti) is widely used for load-bearing bio-implants, however, it is bio-inert and exhibits poor osteo-inductive properties. Calcium and magnesium ions are considered to be involved in bone metabolism and play a physiological role in the angiogenesis, growth, and mineralization of bone tissue. In this study, a facile synthesis approach to the in situ construction of a nanostructure enriched with Ca(2+) and Mg(2+) on the surface of titanium foil is proposed by inserting Ca(2+) and Mg(2+) into the interlayers of sodium titanate nanostructures through an ion-substitution process. The characteriz 0.67, and 0.73 nm ation results validate that cations can be inserted into the interlayer regions of the layered nanostructure without any obvious change of morphology. The cation content is positively correlated to the concentration of the solutions employed. The biological assessments indicate that the type and the amount of cations in the titanate nanostructure can alter the bioactivity of titanium implants. Compared with a Na(+) filled titanate nanostructure, the incorporation of divalent ions (Mg(2+) , Ca(2+) ) can effectively enhance protein adsorption, and thus also enhance the adhesion and differentiation ability of rat bone-marrow stem cells (rBMSCs). The Mg(2+) /Ca(2+) -titanate nanostructure is a promising implantable material that will be widely applicable in artificial bones, joints, and dental implants. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research on ion implantation in MEMS device fabrication by theory, simulation and experiments

NASA Astrophysics Data System (ADS)

Bai, Minyu; Zhao, Yulong; Jiao, Binbin; Zhu, Lingjian; Zhang, Guodong; Wang, Lei

2018-06-01

Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

Comparison of interdental papilla around single implants in the anterior maxilla between two implant systems: A cohort study

PubMed Central

Khoshhal, Masoumeh; Vafaei, Fariborz; Najafi, Mahsa; Nikkhah, Masoumeh

2018-01-01

Background. In successful replacement of a tooth with a dental implant, soft tissue esthetic is as important as stability and function of the implant. Quality and quantity of the peri-implant mucosa can influence esthetic outcomes. This study assessed implant esthetic success of two different implant systems. In this regard the interdental papilla was evaluated and the relation-ship between implant type and crestal bone loss adjacent to implant was assessed. Methods. Eighteen patients (11 males, 7 females) with a total of 18 implants participated in this historical cohort study. Patients were divided into two groups based on the type of implants: Implantium group and SPI group; 36 interproximal papillae were evaluated photographically, using Jemt’s papillary presence index (PPI). Radiographic analysis was carried out to find out the relation between bone loss and type of implant. Analysis of data was performed with SPSS 18, using Fisher's exact test, independent t-test, Spearman's correlation coefficient and ANOVA. Results. Comparison of photographs did not show a statistically significant difference in PPI between the two groups (P=0.94). Radiographic evaluation of crestal bone loss adjacent to implant shoulder did not reveal significant differences between the two groups (P=0.30). Conclusion. Implant therapy in the anterior maxilla, using Implantium or SPI system, did not result in significant differences in esthetics. In this study, there was an inverse relationship between the distance of contact point to bone crest and papilla index (P=0.002 in the SPI group) (P=0.02 in the Implantium group). PMID:29732019

Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch.

PubMed

Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Hasama, Toshifumi; Ishikawa, Hiroshi

2013-07-01

We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

NASA Astrophysics Data System (ADS)

Kojima, Kazunobu; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Shimizu, Mitsuaki; Takahashi, Tokio; Ishibashi, Shoji; Uedono, Akira; Chichibu, Shigefusa F.

2017-06-01

The photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared. The intensities and lifetimes of the near-band-edge and ultraviolet luminescences associated with a MgGa acceptor of I/I GaN:Mg were significantly lower and shorter than those of the epilayers, respectively. Simultaneously, the green luminescence (GL) became dominant. These emissions were quenched far below room temperature. The results indicate the generation of point defects common to GL and nonradiative recombination centers (NRCs) by I/I. Taking the results of positron annihilation measurement into account, N vacancies are the prime candidate to emit GL and create NRCs with Ga vacancies, (VGa) m (VN) n , as well as to inhibit p-type conductivity.

New materials based on polylactide modified with silver and carbon ions

NASA Astrophysics Data System (ADS)

Kurzina, I. A.; Pukhova, I. V.; Botvin, V. V.; Davydova, D. V.; Filimoshkin, A. G.; Savkin, K. P.; Oskomov, K. V.; Oks, E. M.

2015-11-01

An integrated study of poly-L-lactide (PL) synthesis and the physicochemical properties of film surfaces, both modified by silver and carbon ion implantation and also unmodified PL surfaces, has been carried out. Surface modification was done using aMevva-5.Ru metal ion source with ion implantation doses of 1.1014, 1.1015 and 1.1016 ion/cm2. Material characterization was done using NMR, IRS, XPS and AFM. The molecular weight (MW), micro-hardness, surface resistivity, and limiting wetting angle of both un-implanted and implanted samples were measured. The results reveal that degradation of PL macromolecules occurs during ion implantation, followed by CO or CO2 removal and MW decrease. With increasing implantation dose, the glycerol wettability of the PL surface increases but the water affinity decreases (hydrophobic behavior). After silver and carbon ion implantation into the PL samples, the surface resistivity is reduced by several orders of magnitude and a tendency to micro-hardness reductionis induced.

Enhancement of Ag nanoparticles concentration by prior ion implantation

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Wang, Jun; Liu, Changlong

2017-09-01

Thermally grown SiO2 layer on Si substrates were singly or sequentially implanted with Zn or Cu and Ag ions at the same fluence of 2 × 1016/cm2. The profiles of implanted species, structure, and spatial distribution of the formed nanoparticles (NPs) have been characterized by the cross-sectional transmission electron microscope (XTEM) and Rutherford backscattering spectrometry (RBS). It is found that pre-implantation of Zn or Cu ions could suppress the self sputtering of Ag atoms during post Ag ion implantation, which gives rise to fabrication of Ag NPs with a high density. Moreover, it has also been demonstrated that the suppressing effect strongly depends on the applied energy and mobility of pre-implanted ions. The possible mechanism for the enhanced Ag NPs concentration has been discussed in combination with SRIM simulations. Both vacancy-like defects acting as the increased nucleation sites for Ag NPs and a high diffusivity of prior implanted ions in SiO2 play key roles in enhancing the deposition of Ag implants.

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

NASA Astrophysics Data System (ADS)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Silicon Quantum Dots with Counted Antimony Donor Implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Meenakshi; Pacheco, Jose L.; Perry, Daniel Lee

2015-10-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Serum titanium, niobium and aluminium levels two years following instrumented spinal fusion in children: does implant surface area predict serum metal ion levels?

PubMed

Cundy, Thomas P; Cundy, William J; Antoniou, Georgia; Sutherland, Leanne M; Freeman, Brian J C; Cundy, Peter J

2014-11-01

Measurement of serum metal ion levels is used to determine systemic exposure to implant-derived metal debris that may be generated by processes of wear and corrosion. The aim of this study is to investigate predictors of serum metal ion levels in children undergoing instrumented spinal arthrodesis using a titanium alloy, focusing on implant characteristics and instrumentation construct design variables. This prospective longitudinal cohort study involved 33 children. Serum samples were obtained preoperatively:and at five defined interval periods over the first:two post-operative years. Samples were analysed using high resolution:inductively coupled plasma mass spectrometry to measure titanium, niobium and aluminium concentrations. Instrumentation characteristics were catalogued and construct surface area (SA) measurements calculated using an implant-specific software algorithm tool. Significantly elevated levels of serum titanium and niobium were observed (p< 0.0001), with >95 % of post-operative levels abnormally elevated. Significant predictors of serum titanium and niobium levels included time since surgery, surgical procedure (posterior or anterior fusion), number of levels fused, number of pedicle screws inserted, total rod length, total metal SA, total exposed metal SA and total metal-on-metal SA. All significant instrumentation variables were highly correlated. There is a strong relationship between implant SA and both serum titanium and niobium levels. The direct clinical implications of these findings for patients are uncertain, but remain of concern. Surgeons should be aware of the strong correlation between implant surface area of the chosen construct and the subsequent serum metal ion levels.

Improvement of Vitamin K2 Production by Escherichia sp. with Nitrogen Ion Beam Implantation Induction

NASA Astrophysics Data System (ADS)

Liu, Yan; Wang, Li; Zheng, Zhiming; Wang, Peng; Zhao, Genhai; Liu, Hui; Gong, Guohong; Wu, Hefang; Liu, Hongxia; Tan, Mu; Li, Zhemin

2015-02-01

Low-energy ion implantation as a novel mutagen has been increasingly applied in the microbial mutagenesis for its higher mutation frequency and wider mutation spectra. In this work, N+ ion beam implantation was used to enhance Escherichia sp. in vitamin K2 yield. Optimization of process parameters under submerged fermentation was carried out to improve the vitamin K2 yield of mutant FM5-632. The results indicate that an excellent mutant FM5-632 with a yield of 123.2±1.6 μg/L, that is four times that of the original strain, was achieved by eight successive implantations under the conditions of 15 keV and 60×2.6×1013 ions/cm2. A further optimization increased the yield of the mutant by 39.7%, i.e. 172.1±1.2 μg/L which occurred in the mutant cultivated in the optimal fermentation culture medium composed of (per liter): 15.31 g glycerol, 10 g peptone, 2.89 g yeast extract, 5 g K2HPO4, 1 g NaCl, 0.5 g MgSO4·7H2O and 0.04 g cedar wood oil, incubated at 33 °C, pH 7.0 and 180 rpm for 120 h.

Do ion levels in metal-on-metal hip resurfacing differ from those in metal-on-metal THA at long-term followup?

PubMed

Savarino, Lucia; Cadossi, Matteo; Chiarello, Eugenio; Baldini, Nicola; Giannini, Sandro

2013-09-01

Metal-on-metal hip resurfacing arthroplasty (MOM HR) has become an established alternative to traditional metal-on-metal total hip arthroplasty (MOM THA) for younger, more active patients. Nevertheless, concerns remain regarding wear and corrosion of the bearing surfaces and the resulting systemic metal ion distribution. We therefore asked whether (1) serum ion concentrations in patients with MOM HR at the time of long-term followup were higher than concentrations in a control population with no hip implants; (2) the ion concentrations in patients with MOM HR were different from those in patients with MOM THA; and (3) sex would influence ion levels with regard to implant type. The MOM HR and MOM THA groups consisted of 25 patients (evaluated at a minimum of 96 months) and 16 patients (evaluated at a minimum of 106 months), respectively. Forty-eight healthy donors were recruited for reference values. Cobalt, chromium, nickel, and molybdenum were measured by furnace graphite atomic absorption spectrophotometry. Ion concentrations of cobalt, chromium, and molybdenum in MOM HR were higher than in controls. Chromium and cobalt release were higher in MOM HR than in MOM THA. The sex-based analysis showed the difference was because women had higher concentrations in the MOM HR group than in the MOM THA group, whereas there was no difference between the men in the two groups. In MOM HR, high metal ion release persists for the long term. Consequently, it is important to implement strict biomonitoring for patients who have received these implants. The sustained high levels of chromium in females within the MOM HR group are concerning and merits strong consideration when choosing implants in this patient group.

Analysis techniques of charging damage studied on three different high-current ion implanters

NASA Astrophysics Data System (ADS)

Felch, S. B.; Larson, L. A.; Current, M. I.; Lindsey, D. W.

1989-02-01

One of the Greater Silicon Valley Implant Users' Group's recent activities has been to sponsor a round-robin on charging damage, where identical wafers were implanted on three different state-of-the-art, high-current ion implanters. The devices studied were thin-dielectric (250 Å SiO2), polysilicon-gate MOS capacitors isolated by thick field oxide. The three implanters involved were the Varian/Extrion 160XP, the Eaton/Nova 10-80, and the Applied Materials PI9000. Each implanter vendor was given 48 wafers to implant with 100 keV As+ ions at a dose of 1 × 1016 cm-2. Parameters that were varied include the beam current, electron flood gun current, and chamber pressure. The charge-to-breakdown, breakdown voltage, and leakage current of several devices before anneal have been measured. The results from these tests were inconclusive as to the physical mechanism of charging and as to the effectiveness of techniques to reduce its impact on devices. However, the methodology of this study is discussed in detail to aid in the planning of future experiments. Authors' industrial affiliations: S.B. Felch, Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303, USA; L.A. Larson, National Semiconductor Corp., P.O. Box 58090, Santa Clara, CA 95052-8090, USA; M.I. Current, Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054, USA; D.W. Lindsey, Eaton/NOVA, 931 Benicia Ave, Sunnyvale, CA 94086, USA.

Defects in N/Ge coimplanted GaN studied by positron annihilation

NASA Astrophysics Data System (ADS)

Nakano, Yoshitaka; Kachi, Tetsu

2002-01-01

We have applied positron annihilation spectroscopy to study the depth distributions and species of defects in N-, Ge-, and N/Ge-implanted GaN at dosages of 1×1015 cm-2. For all the implanted samples, Ga vacancies introduced by ion-implantation are found to diffuse into much deeper regions of the GaN layers during the implantation and to change into some other vacancy-type defects by the annealing at 1300 °C. In particular, markedly different defects turn out to be newly created in the electrically activated regions for both the Ge- and N/Ge-implanted samples after annealing, indicating that these new defects are probably associated with the presence of the implanted Ge dopant atoms.

Antibacterial effect of silver nanofilm modified stainless steel surface

NASA Astrophysics Data System (ADS)

Fang, F.; Kennedy, J.; Dhillon, M.; Flint, S.

2015-03-01

Bacteria can attach to stainless steel surfaces, resulting in the colonization of the surface known as biofilms. The release of bacteria from biofilms can cause contamination of food such as dairy products in manufacturing plants. This study aimed to modify stainless steel surfaces with silver nanofilms and to examine the antibacterial effectiveness of the modified surface. Ion implantation was applied to produce silver nanofilms on stainless steel surfaces. 35 keV Ag ions were implanted with various fluences of 1 × 1015 to 1 × 1017 ions•cm-2 at room temperature. Representative atomic force microscopy characterizations of the modified stainless steel are presented. Rutherford backscattering spectrometry spectra revealed the implanted atoms were located in the near-surface region. Both unmodified and modified stainless steel coupons were then exposed to two types of bacteria, Pseudomonas fluorescens and Streptococcus thermophilus, to determine the effect of the surface modification on bacterial attachment and biofilm development. The silver modified coupon surface fluoresced red over most of the surface area implying that most bacteria on coupon surface were dead. This study indicates that the silver nanofilm fabricated by the ion implantation method is a promising way of reducing the attachment of bacteria and delay biofilm formation.

Surface characterization and biodegradation behavior of magnesium implanted poly(L-lactide/caprolactone) films

NASA Astrophysics Data System (ADS)

Sokullu, Emel; Ersoy, Fulya; Yalçın, Eyyup; Öztarhan, Ahmet

2017-11-01

Biopolymers are great source for medical applications such as drug delivery, wound patch, artificial tissue studies etc., food packaging, cosmetic applications etc. due to their biocompatibility and biodegradability. Particularly, the biodegradation ability of a biomaterial makes it even advantageous for the applications. The more tunable the biodegradation rate the more desired the biopolymers. There are many ways to tune degradation rate including surface modification. In this study ion implantation method applied to biopolymer surface to determine its effect on biodegradation rate. In this study, surface modification of poly(L-lactide/caprolactone) copolymer film is practiced via Mg-ion-implantation using a MEVVA ion source. Mg ions were implanted at a fluence of 1 × 1015 ions/cm2 and ion energy of 30 keV. Surface characterization of Mg-ion-implanted samples is examined using Atomic Force Microscopy, Raman spectroscopy, contact angle measurement and FT-IR Spectroscopy. These analyses showed that the surface become more hydrophilic and rougher after the ion implantation process which is advantageous for cell attachment on medical studies. The in vitro enzymatic degradation of Mg-implanted samples was investigated in Lipase PS containing enzyme solution. Enzymatic degradation rate was examined by mass loss calculation and it is shown that Mg-implanted samples lost more than 30% of their weight while control samples lost around 20% of their weight at the end of the 16 weeks. The evaluation of the results confirmed that Mg-ion-implantation on poly(L-lactide/caprolactone) films make the surface rougher and more hydrophilic and changes the organic structure on the surface. On the other hand, ion implantation has increased the biodegradation rate.

Development of vertical compact ion implanter for gemstones applications

NASA Astrophysics Data System (ADS)

Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

2014-08-01

Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide.

DTIC Science & Technology

1980-12-01

AFIT/GEO/EE/80D-1 I -’ SYSTEM OPTIMIZATION OF THE GLOW DISCHARGE OPTICAL SPECTROSCOPY TECHNIQUE USED FOR IMPURITY PROFILING OF ION IMPLANTED GALLIUM ...EE/80D-1 (\\) SYSTEM OPTIMIZATION OF THE GLOW DISCHARGE OPTICAL SPECTROSCOPY TECHNIQUE USED FOR IMPURITY PROFILING OF ION IMPLANTED GALLIUM ARSENIDE...semiconductors, specifically annealed and unan- nealed ion implanted gallium arsenide (GaAs). Methods to improve the sensitivity of the GDOS system have

Gene expression profiles in promoted-growth rice seedlings that germinated from the seeds implanted by low-energy N+ beam

PubMed Central

Ya, Huiyuan; Chen, Qiufang; Wang, Weidong; Chen, Wanguang; Qin, Guangyong; Jiao, Zhen

2012-01-01

The stimulation effect that some beneficial agronomic qualities have exhibited in present-generation plants have also been observed due to ion implantation on plants. However, there is relatively little knowledge regarding the molecular mechanism of the stimulation effects of ion-beam implantation. In order to extend our current knowledge about the functional genes related to this stimulation effect, we have reported a comprehensive microarray analysis of the transcriptome features of the promoted-growth rice seedlings germinating from seeds implanted by a low-energy N+ beam. The results showed that 351 up-regulated transcripts and 470 down-regulated transcripts, including signaling proteins, kinases, plant hormones, transposable elements, transcription factors, non-coding protein RNA (including miRNA), secondary metabolites, resistance proteins, peroxidase and chromatin modification, are all involved in the stimulating effects of ion-beam implantation. The divergences of the functional catalog between the vacuum and ion implantation suggest that ion implantation is the principle cause of the ion-beam implantation biological effects, and revealed the complex molecular networks required to adapt to ion-beam implantation stress in plants, including enhanced transposition of transposable elements, promoted ABA biosynthesis and changes in chromatin modification. Our data will extend the current understanding of the molecular mechanisms and gene regulation of stimulation effects. Further research on the candidates reported in this study should provide new insights into the molecular mechanisms of biological effects induced by ion-beam implantation. PMID:22843621

Evaluation of electron beam stabilization for ion implant processing

NASA Astrophysics Data System (ADS)

Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

1999-06-01

With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

Ion Beam Processing.

DTIC Science & Technology

1987-03-13

guides Taps for plastics Orthopedic implants (hip and knee joints, etc.) Extrusion spinnerettes Finishing rolls for copper rod Extrusion nozzles...detail in following sections. C. Comparison to Coating Techniques -,* Because ion implantation is a process that modifies surface properties it is often...Therefore, it is important to understand the differences between ion implantation and coating techniques, especially ion plating. The result of ion

Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions

NASA Astrophysics Data System (ADS)

Jadan, M.; Chelyadinskii, A. R.; Odzhaev, V. B.

2013-02-01

The possibility to control the localization of implanted carbon in sites and interstices in silicon immediately during the implantation has been demonstrated. The formation of residual extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions has been shown. It has been found that the formation of residual defects can be suppressed due to annihilation of point defects at C atoms (the Watkins effect). The positive effect is attained if implanted carbon is localized over lattice sites, which is provided by its implantation with the effective current density of the scanning ion beam no lower than 1.0 μA cm-2.

Characterization of low temperature metallic magnetic calorimeters having gold absorbers with implanted 163Ho ions

NASA Astrophysics Data System (ADS)

Gastaldo, L.; Ranitzsch, P. C.-O.; von Seggern, F.; Porst, J.-P.; Schäfer, S.; Pies, C.; Kempf, S.; Wolf, T.; Fleischmann, A.; Enss, C.; Herlert, A.; Johnston, K.

2013-05-01

For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to perform a high precision calorimetric measurement of the energy spectrum following the electron capture of 163Ho using MMCs having the radioactive 163Ho ions implanted in the absorber. The isotope 163Ho decays through electron capture to 163Dy and features the smallest known QEC value. This peculiarity makes 163Ho a very interesting candidate to investigate the value of the electron neutrino mass by the analysis of the energy spectrum. The implantation of 163Ho ions was performed at ISOLDE-CERN. The performance of a detector that underwent an ion-implantation process is compared to the one of a detector without implanted ions. The results show that the implantation dose of ions used in this experiment does not compromise the properties of the detector. Moreover the performance of the detector prototype having the 163Ho ions implanted in the absorber is already close to the requirements needed for an experiment with sub-eV sensitivity to the electron neutrino mass. Based on these results, an optimized detector design for future 163Ho experiments is presented.

Nano-scale phase transformation in Ti-implanted austenitic 301 stainless steel.

PubMed

Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Kinoshita, Hiroshi; Takahashi, Heishichiro

2003-01-01

Phase-transformation behaviours were investigated for austenitic 301 stainless steel during implantation at room temperature with 300 keV Ti ions to fluences of 8 x 10(19) to approximately 3 x 10(21) ions m(-2) by means of transmission electron microscopy. The cross-sectional specimen was prepared using a focused ion beam. Plan observation of the implanted specimen showed that phase transformation from gamma-phase to alpha-phase was induced by implantation to a fluence of 3 x 10(20) Ti ions m(-2). The nucleation of the irradiation (implantation)-induced phase increased with the increase of the dose. The orientation relationship between the gamma matrix and the induced alpha martensitic phase was identified as (011)alpha//(111)gamma and [11-1]alpha//[10-1], close to the Kurdjumov-Sachs relationship. Cross-sectional observation after implantation to a fluence of 5 x 10(20) ions m(-2) showed that phase transformation mostly nucleated near the surface and occurred in the higher the concentration gradient of the implanted ion, i.e. a higher stress concentration takes place and this stress introduced by the implanted ions acts as a driving force for the transformation.

Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

NASA Technical Reports Server (NTRS)

Biedenbender, M. D.; Kapoor, V. J.

1990-01-01

A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION registered Followed by Laser Thermal Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Sempere, Guillaume

In order to achieve the requirements for P+/N junctions for <45 nm ITRS nodes, ultra low energy and high dose implantations are needed. Classical beamline implantation is now limited in low energies, compared to Plasma Immersion Ion Implantation (PIII) which efficiency is no more to prove for the realization of Ultra-Shallow Junctions (USJ) in semiconductor applications : this technique allows to get ultimate shallow profiles (as implanted) due to no lower limitation of energy and high dose rate. Electrical activation is also a big issue since it has to afford high electrical activation rate with very low diffusion. Laser annealingmore » is one of the candidates for the 45 nm node. This paper presents electrical and physico-chemical characterizations of junctions realized with BF3 PIII followed by laser thermal processing with aim to obtain ultra-shallow junctions. Different implantation conditions (acceleration voltage/dose) and laser conditions (laser types, fluence/number of shots) are used for this study. Pre-amorphization is also used to confine the junction depth, and is shown to have a positive effect on junction depth but leads in higher junction leakage due to the remaining of EOR defects. The characterization is done using Optical characterization tool (SEMILAB) for sheet resistance and junction leakage measurements. SIMS is used for Boron profile and junction depth.« less

Assessing for Cardiotoxicity from Metal-on-Metal Hip Implants with Advanced Multimodality Imaging Techniques.

PubMed

Berber, Reshid; Abdel-Gadir, Amna; Rosmini, Stefania; Captur, Gabriella; Nordin, Sabrina; Culotta, Veronica; Palla, Luigi; Kellman, Peter; Lloyd, Guy W; Skinner, John A; Moon, James C; Manisty, Charlotte; Hart, Alister J

2017-11-01

High failure rates of metal-on-metal (MoM) hip implants prompted regulatory authorities to issue worldwide safety alerts. Circulating cobalt from these implants causes rare but fatal autopsy-diagnosed cardiotoxicity. There is concern that milder cardiotoxicity may be common and underrecognized. Although blood metal ion levels are easily measured and can be used to track local toxicity, there are no noninvasive tests for organ deposition. We sought to detect correlation between blood metal ions and a comprehensive panel of established markers of early cardiotoxicity. Ninety patients were recruited into this prospective single-center blinded study. Patients were divided into 3 age and sex-matched groups according to implant type and whole-blood metal ion levels. Group-A patients had a ceramic-on-ceramic [CoC] bearing; Group B, an MoM bearing and low blood metal ion levels; and Group C, an MoM bearing and high blood metal-ion levels. All patients underwent detailed cardiovascular phenotyping using cardiac magnetic resonance imaging (CMR) with T2*, T1, and extracellular volume mapping; echocardiography; and cardiac blood biomarker sampling. T2* is a novel CMR biomarker of tissue metal loading. Blood cobalt levels differed significantly among groups A, B, and C (mean and standard deviation [SD], 0.17 ± 0.08, 2.47 ± 1.81, and 30.0 ± 29.1 ppb, respectively) and between group A and groups B and C combined. No significant between-group differences were found in the left atrial or ventricle size, ejection fraction (on CMR or echocardiography), T1 or T2* values, extracellular volume, B-type natriuretic peptide level, or troponin level, and all values were within normal ranges. There was no relationship between cobalt levels and ejection fraction (R = 0.022, 95% confidence interval [CI] = -0.185 to 0.229) or T2* values (R = 0.108, 95% CI = -0.105 to 0.312). Using the best available technologies, we did not find that high (but not extreme) blood cobalt and chromium levels had any significant cardiotoxic effect on patients with an MoM hip implant. There were negligible-to-weak correlations between elevated blood metal ion levels and ejection fraction even at the extremes of the 95% CI, which excludes any clinically important association. Therapeutic Level II. See Instructions for Authors for a complete description of levels of evidence.

Effect of Restorative Configurations and Occlusal Schemes on Strain Levels in Bone Surrounding Implants.

PubMed

Block, Jonathan; Matalon, Shlomo; Tanase, Gabriela; Ormianer, Zeev

2017-08-01

This study investigated strain levels during and after implant insertion, and during and after simulated mastication, in splinted and nonsplinted restorations with different occlusal schemes. Fresh bovine bone resembling type I jawbone was collected. Strain gauges were placed at each implant's neck, one horizontally and one vertically. Strains at and after implant insertion were recorded. The restoration was loaded with cyclic load simulating mastication. Loading and residual strains were recorded for 6 experimental loading types. At and after implant insertion, high horizontal strains were measured. Full splint loading presented higher vertical compared with horizontal strains (P < 0.05). Segmented cross-arch splint showed higher horizontal strains (P < 0.05). Premolar loading guidance presented the most favorable loading and residual strain results (P < 0.05). Splinting implant restorations may reduce strain levels at implant neck area and provide preferable strain distribution during cyclic loading.

Effects of vanadium ion implantation on microstructure, mechanical and tribological properties of TiN coatings

NASA Astrophysics Data System (ADS)

Deng, Bin; Tao, Ye; Guo, Deliang

2012-09-01

TiN coatings were deposited on the substrates of cemented carbide (WC-TiC-Co) by Magnetic Filter Arc Ion Plating (MFAIP) and then implanted with vanadium through Metal Vacuum Vapor Arc (MEVVA) ion source with the doses of 1 × 1017 and 5 × 1017 ions/cm2 at 40 kV. The microstructures and chemical compositions of the V-implanted TiN coatings were investigated using Glancing Incidence X-ray Diffraction (GIXRD) and X-ray Photoelectron Spectroscopy (XPS), together with the mechanical and tribological properties of coatings were characterized using nano-indentation and ball-on-disk tribometer. It was found that the diffraction peaks of the V-implanted TiN coatings at the doses of 5 × 1017 ions/cm2 shifted to higher angles and became broader. The hardness and elastic modulus of TiN coatings increased after V ion implantation. The wear mechanism for both un-implanted and V-implanted TiN coatings against GCr15 steel ball was adhesive wear, and the V-implanted TiN coatings had a lower friction coefficient as well as a better wear resistance

Cathodoluminescence Characterization of Ion Implanted GaAs.

DTIC Science & Technology

1981-04-01

Born approxima- tion to calculate the differential scattering cross section. Everhart (Reference 30) used the single scattering assumption to develop a...pp (1 V + gn - nn = 6n/6t (11) with 4..4 Jp = -DpVp + p1pE (12) 3 -D Vn -n n1E (13) n n 30 AFWAL-TR-80-l 184 the subscripts p and n refer to holes and...described by differential cross sections. The differential scattering cross sections are determined by the potential between the ion and the

Electrochemical behavior and biological response of Mesenchymal Stem Cells on cp-Ti after N-ions implantation

NASA Astrophysics Data System (ADS)

Rizwan, M.; Ahmad, A.; Deen, K. M.; Haider, W.

2014-11-01

Titanium and its alloys are most widely used as implant materials due to their excellent biocompatibility, mechanical properties and chemical stability. In this study Nitrogen ions of known dosage were implanted over cp-Ti by Pelletron accelerator with beam energy of 0.25 MeV.The atomic force microscopy of bare and nitrogen implanted specimens confirmed increase in surface roughness with increase in nitrogen ions concentration. X-ray diffraction patterns of ions implanted surfaces validated the formation of TiN0.3 and Ti3N2-xnitride phases. The tendency to form passive film and electrochemical behavior of these surfaces in ringer lactate (RL) solution was evaluated by Potentiodynamic polarization and electrochemical impedance spectroscopy respectively. It is proved that nitrogen ions implantation was beneficial to reduce corrosion rate and stabilizing passive film by increasing charge transfer resistance in RL. It was concluded that morphology and proliferation of Mesenchymal Stem Cells on nitrogen ions implanted surfaces strongly depends on surface roughness and nitride phases.

Development of pulsed processes for the manufacture of solar cells

NASA Technical Reports Server (NTRS)

Minnucci, J. A.

1979-01-01

Low-energy ion implantation processes for the automated production of silicon solar cells were investigated. Phosphorus ions at an energy of 10 keV and dose of 2 x 10 to the 15th power/sq cm were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10 to the 15th power were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100 mA, automated implanter with a production capacity of 100 MW sub e/sq cm per year. Two process sequences were developed which employ ion implantation and furnace or pulse annealing. A computer program was used to determine costs for junction formation by ion implantation and various furnace annealing cycles to demonstrate cost effectiveness of these methods.

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

NASA Astrophysics Data System (ADS)

Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2018-05-01

SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

NASA Technical Reports Server (NTRS)

Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.;

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nouri, Lamia; Possémé, Nicolas; Landis, Stéfan; Milesi, Frédéric; Gaillard, Frédéric-Xavier

2017-04-01

Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration's requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures. In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one. In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that "infinite" selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results. The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

Comparison of monomode KTiOPO4 waveguide formed by C3+ ion implantation and Rb+ ion exchange

NASA Astrophysics Data System (ADS)

Cui, Xiao-Jun; Wang, Liang-Ling

2017-02-01

In this work, we report on the formation and characterization of monomode KTiOPO4 waveguide at 1539 nm by 6.0 MeV C3+ ion implantation with the dose of 2×1015 ions/cm2 and Rb+-K+ ion exchange, respectively. The relative intensity of light as a function of effective refractive index of TM modes at 633 nm and 1539 nm for KTiOPO4 waveguide formed by two different methods were compared with the prism coupling technique. The refractive index (nz) profile for the ion implanted waveguide was reconstructed by reflectivity calculation method, and one for the ion exchanged waveguide was by inverse Wentzel-Kramers-Brillouin. The nuclear energy loss versus penetration depth of the C3+ ions implantation into KTiOPO4 was simulated using the Stopping Range of Ions in Matter software. The Rutherford Backscattering Spectrometry spectrum of KTiOPO4 waveguide was analyzed after ions exchanged. The results showed that monomode waveguide at 1539 nm can be formed by ion implantation and Rb+ -K+ ion exchange, respectively.

Investigation of microstructure and properties of ultrathin graded ZrNx self-assembled diffusion barrier in deep nano-vias prepared by plasma ion immersion implantation

NASA Astrophysics Data System (ADS)

Zou, Jianxiong; Liu, Bo; Lin, Liwei; Lu, Yuanfu; Dong, Yuming; Jiao, Guohua; Ma, Fei; Li, Qiran

2018-01-01

Ultrathin graded ZrNx self-assembled diffusion barriers with controllable stoichiometry was prepared in Cu/p-SiOC:H interfaces by plasma immersion ion implantation (PIII) with dynamic regulation of implantation fluence. The fundamental relationship between the implantation fluence of N+ and the stoichiometry and thereby the electrical properties of the ZrNx barrier was established. The optimized fluence of a graded ZrN thin film with gradually decreased Zr valence was obtained with the best electrical performance as well. The Cu/p-SiOC:H integration is thermally stable up to 500 °C due to the synergistic effect of Cu3Ge and ZrNx layers. Accordingly, the PIII process was verified in a 100-nm-thick Cu dual-damascene interconnect, in which the ZrNx diffusion barrier of 1 nm thick was successfully self-assembled on the sidewall without barrier layer on the via bottom. In this case, the via resistance was reduced by approximately 50% in comparison with Ta/TaN barrier. Considering the results in this study, ultrathin ZrNx conformal diffusion barrier can be adopted in the sub-14 nm technology node.

Extended defects and hydrogen interactions in ion implanted silicon

NASA Astrophysics Data System (ADS)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (<650°C) defect dissolution and defect injection dominates, resulting in increased junction depths. At higher anneal temperatures, however, repair dominates over defect injection resulting in shallower junctions. Hydrogenation experiments shows that hydrogen enhances dopant activation and reduces TED at low anneal temperatures (<550°C). At anneal temperatures >550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for along time (300min). Also presented is the recipe for formation of multiple cavity layers and the electrical and optical properties of these cavities. Electrically, these cavities are metastable, with two strong minority carrier peaks formed by multiple defect levels. Photoluminescence measurements reveal a strong 0.8eV photon peak.

Nanostructures by ion beams

NASA Astrophysics Data System (ADS)

Schmidt, B.

Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

A negative ion beam application to artificial formation of neuron network in culture

NASA Astrophysics Data System (ADS)

Tsuji, Hiroshi; Sato, Hiroko; Baba, Takahiro; Gotoh, Yasuhito; Ishikawa, Junzo

2000-02-01

A negative ion beam modification of the biocompatibility of polystyrene surface was investigated for the artificial formation of neuron network in culture with respect to negative ion species. Negative ions of silver, copper or carbon were implanted in nontreated polystyrene (NTPS) dishes at conditions of 20 keV and 3×1015ions/cm2 through a mask with many slits of 60 μm in width. For the surface wettability, the contact angle of ion-implanted NTPS was about 75° for silver-negative ions, which was lower than 86° of the original NTPS. For carbon implantation, on the contrary, the contact angles did not change from the original value. In culture experiment using neuron cells of PC-12h (rat adrenal pheochromocytoma), the cells cultured with serum medium in two days showed the cell attachment and growth in number only at the ion-implanted region on NTPS for all ion species. In another two days in culture with nonserum medium including a nerve growth factor, the outgrowth of neural protrusions was also observed only at the ion-implanted region for all ion species. There was a difference in number of attached cells for ion species. The silver-negative ion-implanted NTPS had a large effect for cell attachment compared with other two ion species. This reason is considered to be due to the lowest contract angles among them.

Primary stability of a hybrid self-tapping implant compared to a cylindrical non-self-tapping implant with respect to drilling protocols in an ex vivo model.

PubMed

Toyoshima, Takeshi; Wagner, Wilfried; Klein, Marcus Oliver; Stender, Elmar; Wieland, Marco; Al-Nawas, Bilal

2011-03-01

Modifications of implant design have been intending to improve primary stability. However, little is known about investigation of a hybrid self-tapping implant on primary stability. The aims of this study were to evaluate the primary stability of two hybrid self-tapping implants compared to one cylindrical non-self-tapping implant, and to elucidate the relevance of drilling protocols on primary stability in an ex vivo model. Two types of hybrid self-tapping implants (Straumann® Bone Level implant [BL], Straumann® Tapered Effect implant [TE]) and one type of cylindrical non-self-tapping implant (Straumann® Standard Plus implant [SP]) were investigated in the study. In porcine iliac cancellous bones, 10 implants each were inserted either using standard drilling or under-dimensioned drilling protocol. The evaluation of implant-bone interface stability was carried out by records of maximum insertion torque, the Periotest® (Siemens, Bensheim, Germany), the resonance frequency analysis (RFA), and the push-out test. In each drilling group, the maximum insertion torque values of BL and TE were significantly higher than SP (p=.014 and p=.047, respectively). In each group, the Periotest values of TE were significantly lower than SP (p=.036 and p=.033, respectively). The Periotest values of BL and TE were significantly lower in the group of under-dimensioned drilling than standard drilling (p=.002 and p=.02, respectively). In the RFA, no statistical significances were found in implants between two groups and between implants in each group. In each group, the push-out values of BL and TE were significantly higher than SP (p=.006 and p=.049, respectively). Hybrid self-tapping implants could achieve a high primary stability which predicts them for use in low-density bone. However, there is still a debate to clarify the influence of under-dimensioned drilling on primary stability. © 2009, Copyright the Authors. Journal Compilation © 2011, Wiley Periodicals, Inc.

Risk factors associated with early implant failure: A 5-year retrospective clinical study.

PubMed

Olmedo-Gaya, Maris Victoria; Manzano-Moreno, Francisco J; Cañaveral-Cavero, Esther; de Dios Luna-del Castillo, Juan; Vallecillo-Capilla, Manuel

2016-02-01

The replacement of lost teeth with dental implants is a widespread treatment whose associated problems are also frequently encountered. Nevertheless, the factors associated with early implant failure have not been well documented. Further analyses of the factors influencing osseointegration establishment are required to maximize the predictability of the procedure and minimize implant failures. The purpose of this retrospective clinical study was to explore the association between possible risk factors and early implant failure. This retrospective clinical study evaluated 142 participants who received 276 external connection BTI implants between 2007 and 2011. Participant variables (age, sex, systemic disease, tobacco use, alcohol consumption, bruxism, and degree of periodontal disease), implant variables (type of edentulism, localization, area, diameter, length, and bone quality), intervention variables (expansion mechanisms, sinus augmentation techniques, bone regeneration, and implant insertion), and postoperative variables (presence of pain/inflammation at 1 week postsurgery) were studied. A multilevel logistic regression model (mixed effects-type model) was used to determine the influence of variables on early implant failure. Early implant failure was significantly associated with the male sex (P=.001), severe periodontal disease (P=.005), short implants (P=.001), expansion technique (P=.002), and postoperative pain/inflammation at 1 week postsurgery (P<.001). Early dental implant failure is more frequent in men and in individuals with severe periodontal disease, short implants, pain/inflammation at 1 week postsurgery, or bone expansion treatment. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Understanding long-term silver release from surface modified porous titanium implants.

PubMed

Shivaram, Anish; Bose, Susmita; Bandyopadhyay, Amit

2017-08-01

Prevention of orthopedic device related infection (ODRI) using antibiotics has met with limited amount of success and is still a big concern during post-surgery. As an alternative, use of silver as an antibiotic treatment to prevent surgical infections is being used due to the well-established antimicrobial properties of silver. However, in most cases silver is used in particulate form with wound dressings or with short-term devices such as catheters but not with load-bearing implants. We hypothesize that strongly adherent silver to load-bearing implants can offer longer term solution to infection in vivo. Keeping that in mind, the focus of this study was to understand the long term release study of silver ions for a period of minimum 6months from silver coated surface modified porous titanium implants. Implants were fabricated using a LENS™ system, a powder based additive manufacturing technique, with at least 25% volume porosity, with and without TiO 2 nanotubes in phosphate buffer saline (pH 7.4) to see if the total release of silver ions is within the toxic limit for human cells. Considering the fact that infection sites may reduce the local pH, silver release was also studied in acetate buffer (pH 5.0) for a period of 4weeks. Along with that, the osseointegrative properties as well as cytotoxicity of porous titanium implants were assessed in vivo for a period of 12weeks using a rat distal femur model. In vivo results indicate that porous titanium implants with silver coating show comparable, if not better, biocompatibility and bonding at the bone-implant interface negating any concerns related to toxicity related to silver to normal cells. The current research is based on our recently patented technology, however focused on understanding longer-term silver release to mitigate infection related problems in load-bearing implants that can even arise several months after the surgery. Prevention of orthopedic device related infection using antibiotics has met with limited success and is still a big concern during post-surgery. Use of silver as an antibiotic treatment to prevent surgical infections is being explored due to the well-established antimicrobial properties of silver. However, in most cases silver is used in particulate form with wound dressings or with short-term devices such as catheters but not with load-bearing implants. We hypothesize that strongly adherent silver to load-bearing implants can offer longer-term solution towards infection in vivo. Keeping that in mind, the focus of this study was to understand the long-term release of silver ions, for a period of minimum 6months, from silver coated surface modified porous titanium implants. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Batteries used to Power Implantable Biomedical Devices

PubMed Central

Bock, David C.; Marschilok, Amy C.; Takeuchi, Kenneth J.; Takeuchi, Esther S.

2012-01-01

Battery systems have been developed that provide years of service for implantable medical devices. The primary systems utilize lithium metal anodes with cathode systems including iodine, manganese oxide, carbon monofluoride, silver vanadium oxide and hybrid cathodes. Secondary lithium ion batteries have also been developed for medical applications where the batteries are charged while remaining implanted. While the specific performance requirements of the devices vary, some general requirements are common. These include high safety, reliability and volumetric energy density, long service life, and state of discharge indication. Successful development and implementation of these battery types has helped enable implanted biomedical devices and their treatment of human disease. PMID:24179249

Batteries used to Power Implantable Biomedical Devices.

PubMed

Bock, David C; Marschilok, Amy C; Takeuchi, Kenneth J; Takeuchi, Esther S

2012-12-01

Battery systems have been developed that provide years of service for implantable medical devices. The primary systems utilize lithium metal anodes with cathode systems including iodine, manganese oxide, carbon monofluoride, silver vanadium oxide and hybrid cathodes. Secondary lithium ion batteries have also been developed for medical applications where the batteries are charged while remaining implanted. While the specific performance requirements of the devices vary, some general requirements are common. These include high safety, reliability and volumetric energy density, long service life, and state of discharge indication. Successful development and implementation of these battery types has helped enable implanted biomedical devices and their treatment of human disease.

Bone tissue reactions to biomimetic ion-substituted apatite surfaces on titanium implants.

PubMed

Ballo, Ahmed M; Xia, Wei; Palmquist, Anders; Lindahl, Carl; Emanuelsson, Lena; Lausmaa, Jukka; Engqvist, Håkan; Thomsen, Peter

2012-07-07

The aim of this study was to evaluate the bone tissue response to strontium- and silicon-substituted apatite (Sr-HA and Si-HA) modified titanium (Ti) implants. Sr-HA, Si-HA and HA were grown on thermally oxidized Ti implants by a biomimetic process. Oxidized implants were used as controls. Surface properties, i.e. chemical composition, surface thickness, morphology/pore characteristics, crystal structure and roughness, were characterized with various analytical techniques. The implants were inserted in rat tibiae and block biopsies were prepared for histology, histomorphometry and scanning electron microscopy analysis. Histologically, new bone formed on all implant surfaces. The bone was deposited directly onto the Sr-HA and Si-HA implants without any intervening soft tissue. The statistical analysis showed significant higher amount of bone-implant contact (BIC) for the Si-doped HA modification (P = 0.030), whereas significant higher bone area (BA) for the Sr-doped HA modification (P = 0.034), when compared with the non-doped HA modification. The differences were most pronounced at the early time point. The healing time had a significant impact for both BA and BIC (P < 0.001). The present results show that biomimetically prepared Si-HA and Sr-HA on Ti implants provided bioactivity and promoted early bone formation.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

NASA Astrophysics Data System (ADS)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation in combination with two-step annealing is effective in fabricating ultra-shallow junctions.

The improvement of low-resistance and high-transmission ohmic contact to p-GaN by Zn + implantation

NASA Astrophysics Data System (ADS)

Zhao, Shirong; Shi, Ying; Li, Hongjian; He, Qingyao

2010-05-01

The electrical and optical characteristics of Zn + ion-implanted Ni/Au ohmic contacts to p-GaN were investigated. After the preparation of Ni/Au electrode on the surface of p-GaN, the metal/ p-GaN contact interface was doped by 35 keV Zn + implantation with fluences of 5 × 10 15-5 × 10 16 cm -2. Subsequent rapid thermal annealing of the implanted samples were carried in air at 200-400 °C for 5 min. Obvious improvements of the electrode contact characteristics were observed, i.e. the decrease of specific contact resistance and the increase of light transmittance. The lowest specific contact resistance of 5.46 × 10 -5 Ω cm 2 was achieved by 1 × 10 16 cm -2 Zn + implantation. The transmission enhancement of the electrodes was found as the annealing temperature rises. Together with the morphology and structure analyses of the contacts by scanning and transmission electron microscope, the corresponding mechanism for such an improvement was discussed.

Ion implantation in ices and its relevance to the icy moons of the external planets

NASA Astrophysics Data System (ADS)

Strazzulla, G.; Baratta, G. A.; Fulvio, D.; Garozzo, M.; Leto, G.; Palumbo, M. E.; Spinella, F.

2007-08-01

Solid, atmosphere-less objects in the Solar System are continuously irradiated by energetic ions mostly in the keV-MeV energy range. Being the penetration depth of the incoming ions usually much lower than the thickness of the target, they are stopped into the ice. They deposit energy in the target induce the breaking of molecular bonds. The recombination of fragments produce different molecules. Reactive ions (e.g., H, C, N, O, S) induce all of the effects of any other ion, but in addition have a chance, by implantation in the target, to form new species containing the projectile. An ongoing research program performed at our laboratory has the aim to investigate ion implantation of reactive ions in many relevant ice mixtures. The results obtained so far indicate that some molecular species observed on icy planetary surfaces could not be native of that object but formed by implantation of reactive ions. In particular we present data obtained after: • C, N and S implantation in water ice • H implantation in carbon and sulfur dioxide

Influence of titanium implant surface characteristics on bone regeneration in dehiscence-type defects: an experimental study in dogs.

PubMed

Schwarz, Frank; Sager, Martin; Kadelka, Ines; Ferrari, Daniel; Becker, Jürgen

2010-05-01

The aim of the present study was to compare bone regeneration in dehiscence-type defects at titanium implants with chemically modified sandblasted/acid-etched (modSLA) or dual acid-etched surfaces with a calcium phosphate nanometre particle modification (DCD/CaP). Buccal dehiscence-type defects were surgically created following implant site preparation in both the upper and the lower jaws of 12 fox hounds. Both types of implants were randomly allocated in a split-mouth design and left to heal in a submerged position for 2 and 8 weeks. Dissected blocks were processed for histomorphometrical analysis [e.g. new bone height (NBH), percentage of bone-to-implant contact (BIC), area of new bone fill (BF), and area of mineralized tissue (MT) within BF]. At 2 and 8 weeks, both groups revealed comparable mean BF (2.3+/-0.6 to 2.5+/-0.6 mm(2)versus 2.0+/-0.6 to 1.4+/-0.5 mm(2)) and MT (31.1+/-14.3-83.2+/-8.2%versus 38.9+/-15.9-84.4+/-6.3%) values. However, modSLA implants revealed significantly higher mean NBH (2.4+/-0.8 to 3.6+/-0.3 mm versus 0.9+/-0.8 to 1.8+/-1.4 mm) and BIC (53.3+/-11.3-79.5+/-6.6%versus 19.3+/-16.4-47.2+/-30.7%) values than DCD/CaP implants. ModSLA implants may have a higher potential to support osseointegration in dehiscence-type defects than DCD/CaP implants.

Processing of silicon solar cells by ion implantation and laser annealing

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.; Greenwald, A. C.

1981-01-01

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

NASA Astrophysics Data System (ADS)

Cherkashin, N.; Daghbouj, N.; Seine, G.; Claverie, A.

2018-04-01

Sequential He++H+ ion implantation, being more effective than the sole implantation of H+ or He+, is used by many to transfer thin layers of silicon onto different substrates. However, due to the poor understanding of the basic mechanisms involved in such a process, the implantation parameters to be used for the efficient delamination of a superficial layer are still subject to debate. In this work, by using various experimental techniques, we have studied the influence of the He and H relative depth-distributions imposed by the ion energies onto the result of the sequential implantation and annealing of the same fluence of He and H ions. Analyzing the characteristics of the blister populations observed after annealing and deducing the composition of the gas they contain from FEM simulations, we show that the trapping efficiency of He atoms in platelets and blisters during annealing depends on the behavior of the vacancies generated by the two implants within the H-rich region before and after annealing. Maximum efficiency of the sequential ion implantation is obtained when the H-rich region is able to trap all implanted He ions, while the vacancies it generated are not available to favor the formation of V-rich complexes after implantation then He-filled nano-bubbles after annealing. A technological option is to implant He+ ions first at such an energy that the damage it generates is located on the deeper side of the H profile.

Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

NASA Astrophysics Data System (ADS)

Devès, G.; Matsuyama, S.; Barbotteau, Y.; Ishii, K.; Ortega, R.

2006-05-01

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

Interferometric pump-probe characterization of the nonlocal response of optically transparent ion implanted polymers

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Hadjichristov, Georgi B.

2012-03-01

Optical interferometric technique is applied to characterize the nonlocal response of optically transparent ion implanted polymers. The thermal nonlinearity of the ion-modified material in the near-surface region is induced by continuous wave (cw) laser irradiation at a relatively low intensity. The interferometry approach is demonstrated for a subsurface layer of a thickness of about 100 nm formed in bulk polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV and fluence in the range 1014-1017 cm-2. The laser-induced thermooptic effect in this layer is finely probed by interferometric imaging. The interference phase distribution in the plane of the ion implanted layer is indicative for the thermal nonlinearity of the near-surface region of ion implanted optically transparent polymeric materials.

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

NASA Technical Reports Server (NTRS)

Fonash, S. J.; Sigh, R.; Mu, H. C.

1986-01-01

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Reflectivity modification of polymethylmethacrylate by silicon ion implantation

NASA Astrophysics Data System (ADS)

Hadjichristov, Georgi B.; Ivanov, Victor; Faulques, Eric

2008-05-01

The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50 keV) Si + beam at fluences in the range from 10 13 to 10 17 cm -2 was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si +-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated.

Microfabrication Method using a Combination of Local Ion Implantation and Magnetorheological Finishing

NASA Astrophysics Data System (ADS)

Han, Jin; Kim, Jong-Wook; Lee, Hiwon; Min, Byung-Kwon; Lee, Sang Jo

2009-02-01

A new microfabrication method that combines localized ion implantation and magnetorheological finishing is proposed. The proposed technique involves two steps. First, selected regions of a silicon wafer are irradiated with gallium ions by using a focused ion beam system. The mechanical properties of the irradiated regions are altered as a result of the ion implantation. Second, the wafer is processed by using a magnetorheological finishing method. During the finishing process, the regions not implanted with ion are preferentially removed. The material removal rate difference is utilized for microfabrication. The mechanisms of the proposed method are discussed, and applications are presented.

Evaluation of lattice displacement in Mg - Implanted GaN by Rutherford backscattering spectroscopy

NASA Astrophysics Data System (ADS)

Nishikata, N.; Kushida, K.; Nishimura, T.; Mishima, T.; Kuriyama, K.; Nakamura, T.

2017-10-01

Evaluation of lattice displacement in Mg-ion implanted GaN is studied by combining elastic recoil detection analysis (ERDA), Rutherford backscattering spectroscopy (RBS) and Photoluminescence (PL) measurements. Mg-ion implantation into GaN single crystal wafer is performed with energies of 30 keV (ion fluence; 3.5 × 1014 cm-2) and 60 keV (6.5 × 1014 cm-2) at room temperature. The ERDA measurements using the 1.5 MeV helium beam can evaluate hydrogen from the surface to ∼300 nm. The hydrogen concentration for un-implanted and as-implanted GaN is 3.1 × 1014 cm-2 and 6.1 × 1014 cm-2 at around 265 nm in depth. χmin (the ratio of aligned and random yields) near the surface of the 〈0 0 0 1〉 direction for Ga is 1.61% for un-implanted and 2.51% for Mg-ion implanted samples. On the other hand, the value of χmin for N is 10.08% for un-implanted and 11.20% for Mg-ion implanted samples. The displacement concentration of Ga and N estimated from these χmin values is 4.01 × 1020 cm-3 and 5.46 × 1020 cm-3, respectively. This suggests that Ga vacancy (VGa), N vacancy (VN), Ga interstitial (Gai), and N interstitial (Ni) is introduced in Mg-ion implanted GaN. A strong emission at around 400 nm in as-implanted GaN is related to a VN donor and some acceptor pairs. It is suggested that the origin of the very high resistivity after the Mg-ion implantation is attributed to the carrier compensation effect due to the deep level of Ni as a non-radiative center.

High-intensity low energy titanium ion implantation into zirconium alloy

NASA Astrophysics Data System (ADS)

Ryabchikov, A. I.; Kashkarov, E. B.; Pushilina, N. S.; Syrtanov, M. S.; Shevelev, A. E.; Korneva, O. S.; Sutygina, A. N.; Lider, A. M.

2018-05-01

This research describes the possibility of ultra-high dose deep titanium ion implantation for surface modification of zirconium alloy Zr-1Nb. The developed method based on repetitively pulsed high intensity low energy titanium ion implantation was used to modify the surface layer. The DC vacuum arc source was used to produce metal plasma. Plasma immersion titanium ions extraction and their ballistic focusing in equipotential space of biased electrode were used to produce high intensity titanium ion beam with the amplitude of 0.5 A at the ion current density 120 and 170 mA/cm2. The solar eclipse effect was used to prevent vacuum arc titanium macroparticles from appearing in the implantation area of Zr sample. Titanium low energy (mean ion energy E = 3 keV) ions were implanted into zirconium alloy with the dose in the range of (5.4-9.56) × 1020 ion/cm2. The effect of ion current density, implantation dose on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Zr-Ti intermetallic phases of different stoichiometry after Ti implantation. The intermetallic phases are transformed from both Zr0.7Ti0.3 and Zr0.5Ti0.5 to single Zr0.6Ti0.4 phase with the increase in the implantation dose. The changes in phase composition are attributed to Ti dissolution in zirconium lattice accompanied by the lattice distortions and appearance of macrostrains in intermetallic phases. The depth of Ti penetration into the bulk of Zr increases from 6 to 13 μm with the implantation dose. The hardness and wear resistance of the Ti-implanted zirconium alloy were increased by 1.5 and 1.4 times, respectively. The higher current density (170 mA/cm2) leads to the increase in the grain size and surface roughness negatively affecting the tribological properties of the alloy.

Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

NASA Astrophysics Data System (ADS)

Arisawa, You; Sawano, Kentarou; Usami, Noritaka

2017-06-01

The influence of ion implantation energies on compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si substrates was investigated. It was found that relaxation ratio can be enhanced over 100% at relatively low implantation energies, and compressive strain in the topmost Si layer is maximized at 45 keV due to large lattice mismatch. Cross-sectional transmission electron microscope images revealed that defects are localized around the hetero-interface between the Si1-xCx layer and the Ar+-implanted Si substrate when the implantation energy is 45 keV, which decreases the amount of defects in the topmost Si layer and the upper part of the Si1-xCx buffer layer.

Focused Ion Beam Fabrication of Graded Channel Field Effect Transistors (FETs) in GaAs and Si

DTIC Science & Technology

1988-11-21

is used even though the cut may need to be - I-am wide. Since theL ± ne REMOVAL etch time varies as the inverse square of the beam diameter , a ROF...at room temperature a fairly large diameter capillary 1.4-mm and ion induced deposition or etching , the focused ion beam inner diameter was used . For...Pd/B/As/P (alloy sources) Main - micromachining - implantation uses - ion induced deposition - lithography and etching - high resolution SIMS

The Effect of Ag and Ag+N Ion Implantation on Cell Attachment Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urkac, Emel Sokullu; Oztarhan, Ahmet; Gurhan, Ismet Deliloglu

2009-03-10

Implanted biomedical prosthetic devices are intended to perform safely, reliably and effectively in the human body thus the materials used for orthopedic devices should have good biocompatibility. Ultra High Molecular Weight Poly Ethylene (UHMWPE) has been commonly used for total hip joint replacement because of its very good properties. In this work, UHMWPE samples were Ag and Ag+N ion implanted by using the Metal-Vapor Vacuum Arc (MEVVA) ion implantation technique. Samples were implanted with a fluency of 1017 ion/cm2 and extraction voltage of 30 kV. Rutherford Backscattering Spectrometry (RBS) was used for surface studies. RBS showed the presence of Agmore » and N on the surface. Cell attachment properties investigated with model cell lines (L929 mouse fibroblasts) to demonstrate that the effect of Ag and Ag+N ion implantation can favorably influence the surface of UHMWPE for biomedical applications. Scanning electron microscopy (SEM) was used to demonstrate the cell attachment on the surface. Study has shown that Ag+N ion implantation represents more effective cell attachment properties on the UHMWPE surfaces.« less

Photosensitivity enhancement of PLZT ceramics by positive ion implantation

DOEpatents

Peercy, P.S.; Land, C.E.

1980-06-13

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

NASA Astrophysics Data System (ADS)

Milazzo, R.; Impellizzeri, G.; Piccinotti, D.; De Salvador, D.; Portavoce, A.; La Magna, A.; Fortunato, G.; Mangelinck, D.; Privitera, V.; Carnera, A.; Napolitani, E.

2017-01-01

Heavy doping of Ge is crucial for several advanced micro- and optoelectronic applications, but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a concentration of 1 × 1020 cm-3 by As ion implantation and melting laser thermal annealing (LTA) is shown here to be highly metastable. Upon post-LTA conventional thermal annealing As electrically deactivates already at 350 °C reaching an active concentration of ˜4 × 1019 cm-3. No significant As diffusion is detected up to 450 °C, where the As activation decreases further to ˜3 × 1019 cm-3. The reason for the observed detrimental deactivation was investigated by Atom Probe Tomography and in situ High Resolution X-Ray Diffraction measurements. In general, the thermal stability of heavily doped Ge layers needs to be carefully evaluated because, as shown here, deactivation might occur at very low temperatures, close to those required for low resistivity Ohmic contacting of n-type Ge.

Potential biomedical applications of ion beam technology

NASA Technical Reports Server (NTRS)

Banks, B. A.; Weigand, A. J.; Babbush, C. A.; Vankampen, C. L.

1976-01-01

Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

Potential biomedical applications of ion beam technology

NASA Technical Reports Server (NTRS)

Banks, B. A.; Weigand, A. J.; Van Kampen, C. L.; Babbush, C. A.

1976-01-01

Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic prosthesis fixation, and dental implants.

Machined and plastic copings in three-element prostheses with different types of implantabutment joints: a strain gauge comparative analysis

PubMed Central

NISHIOKA, Renato Sussumu; NISHIOKA, Lea Nogueira Braulino de Melo; ABREU, Celina Wanderley; de VASCONCELLOS, Luis Gustavo Oliveira; BALDUCCI, Ivan

2010-01-01

Objective Using strain gauge (SG) analysis, the aim of this in vitro study was quantify the strain development during the fixation of three-unit screw implant-supported fixed partial dentures, varying the types of implant-abutment joints and the type of prosthetic coping. The hypotheses were that the type of hexagonal connection would generate different microstrains and the type of copings would produce similar microstrains after prosthetic screws had been tightened onto microunit abutments. Materials and methods Three dental implants with external (EH) and internal (IH) hexagonal configurations were inserted into two polyurethane blocks. Microunit abutments were screwed onto their respective implant groups, applying a torque of 20 Ncm. Machined Co-Cr copings (M) and plastic prosthetic copings (P) were screwed onto the abutments, which received standard wax patterns. The wax patterns were cast in Co-Cr alloy (n=5), forming four groups: G1) EH/M; G2) EH/P; G3) IH/M and G4) IH/P. Four SGs were bonded onto the surface of the block tangentially to the implants, SG 1 mesially to implant 1, SG 2 and SG 3 mesially and distally to implant 2, respectively, and SG 4 distally to implant 3. The superstructure’s occlusal screws were tightened onto microunit abutments with 10 Ncm torque using a manual torque driver. The magnitude of microstrain on each SG was recorded in units of microstrain (µε). The data were analyzed statistically by ANOVA and Tukey’s test (p<0.05). Results Microstrain values of each group were: G1= 338.1±223.0 µε; G2= 363.9±190.9 µε; G3= 415.1±53.5 µε; G4= 363.9±190.9 µε. No statistically significant difference was found between EH and IH, regardless of the type of copings (p>0.05). The hypotheses were partially accepted. Conclusions It was concluded that the type of hexagonal connection and coping presented similar mechanical behavior under tightening conditions. PMID:20856998

Mechanical stresses and amorphization of ion-implanted diamond

NASA Astrophysics Data System (ADS)

Khmelnitsky, R. A.; Dravin, V. A.; Tal, A. A.; Latushko, M. I.; Khomich, A. A.; Khomich, A. V.; Trushin, A. S.; Alekseev, A. A.; Terentiev, S. A.

2013-06-01

Scanning white light interferometry and Raman spectroscopy were used to investigate the mechanical stresses and structural changes in ion-implanted natural diamonds with different impurity content. The uniform distribution of radiation defects in implanted area was obtained by the regime of multiple-energy implantation of keV He+ ions. A modification of Bosia's et al. (Nucl. Instrum. Meth. B 268 (2010) 2991) method for determining the internal stresses and the density variation in an ion-implanted diamond layer was proposed that suggests measuring, in addition to the surface swelling of a diamond plate, the radius of curvature of the plate. It is shown that, under multiple-energy implantation of He+, mechanical stresses in the implanted layer may be as high as 12 GPa. It is shown that radiation damage reaches saturation for the implantation fluence characteristic of amorphization of diamond but is appreciably lower than the graphitization threshold.

Timed artificial insemination should be performed early when used norgestomet ear implants are applied for synchronizing ovulation in beef heifers.

PubMed

Sá Filho, M F; Penteado, L; Siqueira, G R; Soares, J G; Mendanha, M F; Macedo, G G; Baruselli, P S

2013-10-01

The present study evaluated the effect of the type of norgestomet ear implant (new vs. used) on the ovarian follicular response (experiment 1) and pregnancy per artificial insemination (AI) (P/AI; experiment 2) of beef heifers subjected to an estradiol plus progestin timed artificial insemination (TAI) program. In experiment 1, 57 cyclic beef heifers were randomly assigned to one of two groups according to the type (new or previously used for 9 days) of norgestomet ear (NORG) implant. At the time of NORG implant insertion, the heifers were treated with 2 mg of intramuscular estradiol benzoate. Eight days later, the NORG implants were removed, and the heifers received an intramuscular administration of 150 μg of d-cloprostenol, 300 IU of equine chorionic gonadotropin, and 0.5 mg of estradiol cypionate. The heifers had their ovaries scanned every 12 hours from the time of NORG implant removal to 96 hours after verifying the occurrence and timing of ovulation. No difference (P = 0.89) was observed in the ovulation rates between the two treatments (new = 80.0%; 24/30 vs. used = 81.5%; 22/27). However, the heifers treated with a used NORG implant had (P = 0.04) higher proportion (36.4%; 8/22) of early ovulation (between 36 and 48 hours after NORG implant removal) compared with the heifers treated with a new NORG implant (8.3%; 2/24). In experiment 2, at the beginning of the synchronization protocol, 416 beef heifers were randomly assigned into two groups, as described in the experiment 1. Two days after the NORG implant removal, the heifers were reassigned to be inseminated at 48 or 54 hours after NORG implant removal. There was an interaction (P = 0.03) between the type of NORG implant and the timing of TAI on P/AI. The timing of insemination only had an effect (P = 0.02) on the P/AI when the heifers were treated with a used NORG implant [(TAI 54 hours = 41.9% (44/105) vs. TAI 48 hours = 58.6% (58/99)]. In conclusion, beef heifers synchronized with a used NORG implant plus estradiol exhibited a higher proportion of earlier ovulations, and TAI in these heifers should be performed 48 hours after removal of used NORG implants. Copyright © 2013 Elsevier Inc. All rights reserved.

Formation of SIMOX-SOI structure by high-temperature oxygen implantation

NASA Astrophysics Data System (ADS)

Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

2015-12-01

We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 1017-1018 ions/cm2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

Osseointegration is improved by coating titanium implants with a nanostructured thin film with titanium carbide and titanium oxides clustered around graphitic carbon.

PubMed

Veronesi, Francesca; Giavaresi, Gianluca; Fini, Milena; Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d'Abusco, Anna; Superti, Fabiana; Panzini, Gianluca; Misiano, Carlo; Palattella, Alberto; Selleri, Paolo; Di Girolamo, Nicola; Garbarino, Viola; Politi, Laura; Scandurra, Roberto

2017-01-01

Titanium implants coated with a 500nm nanostructured layer, deposited by the Ion Plating Plasma Assisted (IPPA) technology, composed of 60% graphitic carbon, 25% titanium oxides and 15% titanium carbide were implanted into rabbit femurs whilst into the controlateral femurs uncoated titanium implants were inserted as control. At four time points the animals were injected with calcein green, xylenol orange, oxytetracycline and alizarin. After 2, 4 and 8weeks femurs were removed and processed for histology and static and dynamic histomorphometry for undecalcified bone processing into methylmethacrylate, sectioned, thinned, polished and stained with Toluidine blue and Fast green. The overall bone-implant contacts rate (percentage of bone-implant contacts/weeks) of the TiC coated implant was 1.6 fold than that of the uncoated titanium implant. The histomorphometric analyses confirmed the histological evaluations. More precisely, higher Mineral Apposition Rate (MAR, μm/day) (p<0.005) and Bone Formation Rate (BFR, μm 2 /μm/day) (p<0.0005) as well as Bone Implant Contact (Bic) and Bone Ingrowth values (p<0.0005) were observed for the TiC coated implants compared to uncoated implants. In conclusion the hard nanostructured TiC layer protects the bulk titanium implant against the harsh conditions of biological tissues and in the same time, stimulating adhesion, proliferation and activity of osteoblasts, induces a better bone-implant contacts of the implant compared to the uncoated titanium implant. Copyright © 2016. Published by Elsevier B.V.

Evaluation of cytotoxicity and corrosion resistance of orthodontic mini-implants.

PubMed

Alves, Celha Borges Costa; Segurado, Márcio Nunes; Dorta, Miriam Cristina Leandro; Dias, Fátima Ribeiro; Lenza, Maurício Guilherme; Lenza, Marcos Augusto

2016-01-01

To evaluate and compare in vitro cytotoxicity and corrosion resistance of mini-implants from three different commercial brands used for orthodontic anchorage. Six mini-implants (Conexão(tm), Neodent(tm) and SIN(tm)) were separately immersed in artificial saliva (pH 6.76) for 30 and 60 days. The cytotoxicity of the corrosion extracts was assessed in L929 cell cultures using the violet crystal and MTT assays, as well as cell morphology under light microscopy. Metal surface characteristics before and after immersion in artificial saliva were assessed by means of scanning electron microscopy (SEM). The samples underwent atomic absorption spectrophotometry to determine the concentrations of aluminum and vanadium ions, constituent elements of the alloy that present potential toxicity. For statistical analysis, one-way ANOVA/Bonferroni tests were used for comparisons among groups with p < 0.05 considered significant. Statistical analysis was carried out with Graph Pad PRISM software Version 4.0. No changes in cell viability or morphology were observed. Mini-implants SEM images revealed smooth surfaces with no obvious traces of corrosion. The extracts assessed by means of atomic absorption spectrophotometry presented concentrations of aluminum and vanadium ions below 1.0 µg/mL and 0.5 µg/mL, respectively. Orthodontic mini-implants manufactured by Conexão(tm), Neodent(tm) and SIN(tm) present high corrosion resistance and are not cytotoxic.

Evaluation of cytotoxicity and corrosion resistance of orthodontic mini-implants

PubMed Central

Alves, Celha Borges Costa; Segurado, Márcio Nunes; Dorta, Miriam Cristina Leandro; Dias, Fátima Ribeiro; Lenza, Maurício Guilherme; Lenza, Marcos Augusto

2016-01-01

ABSTRACT Objective: To evaluate and compare in vitro cytotoxicity and corrosion resistance of mini-implants from three different commercial brands used for orthodontic anchorage. Methods: Six mini-implants (Conexão(tm), Neodent(tm) and SIN(tm)) were separately immersed in artificial saliva (pH 6.76) for 30 and 60 days. The cytotoxicity of the corrosion extracts was assessed in L929 cell cultures using the violet crystal and MTT assays, as well as cell morphology under light microscopy. Metal surface characteristics before and after immersion in artificial saliva were assessed by means of scanning electron microscopy (SEM). The samples underwent atomic absorption spectrophotometry to determine the concentrations of aluminum and vanadium ions, constituent elements of the alloy that present potential toxicity. For statistical analysis, one-way ANOVA/Bonferroni tests were used for comparisons among groups with p < 0.05 considered significant. Statistical analysis was carried out with Graph Pad PRISM software Version 4.0. Results: No changes in cell viability or morphology were observed. Mini-implants SEM images revealed smooth surfaces with no obvious traces of corrosion. The extracts assessed by means of atomic absorption spectrophotometry presented concentrations of aluminum and vanadium ions below 1.0 µg/mL and 0.5 µg/mL, respectively. Conclusion: Orthodontic mini-implants manufactured by Conexão(tm), Neodent(tm) and SIN(tm) present high corrosion resistance and are not cytotoxic. PMID:27901227

Study of the effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation on stainless steel samples

NASA Astrophysics Data System (ADS)

Pillaca, E. J. D. M.; Ueda, M.; Oliveira, R. M.; Pichon, L.

2014-08-01

Effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation (PIII) have been investigated. This magnetic configuration when used in PIII allows obtaining high nitrogen plasma density close to the ion implantation region. Consequently, high ions dose on the target is possible to be achieved compared with standard PIII. In this scenario, nitrogen and carbon ions were implanted simultaneously on stainless steel, as measured by GDOES and detected by X-ray diffraction. Carbon-tape disposed on the sample-holder was sputtered by intense bombardment of nitrogen ions, being the source of carbon atoms in this experiment. The implantation of both N and C caused changes on sample morphology and improvement of the tribological properties of the stainless steel.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuomo, J.J.; Rossnagel, S.M.; Kaufman, H.R.

The work presented in this book deals with ion beam processing for basic sputter etching of samples, for sputter deposition of thin films, for the synthesis of material in thin form, and for the modification of the properties of thin films. The ion energy range covered is from a few tens of eV to about 10,000 eV, with primary interest in the range of about 20 to 1-2 keV, where implantation of the incident ion is a minor effect. Of the types of ion sources and devices available, this book examines principally broad beam ion sources, characterized by high fluxesmore » and large work areas. These sources include the ECR ion source, the Kaufman-type single- and multiple-grid sources, gridless sources such as the Hall effect or closed-drift source, and hydrid sources such as the ionized cluster beam system.« less

Circulating progesterone concentrations in nonlactating Holstein cows during reuse of intravaginal progesterone implants sanitized by autoclave or chemical disinfection.

PubMed

Melo, L F; Monteiro, P L J; Oliveira, L H; Guardieiro, M M; Drum, J N; Wiltbank, M C; Sartori, R

2018-04-01

The aim of this study was to compare plasma progesterone (P4) concentrations in nonlactating, multiparous Holstein cows (n = 24) treated with 2 types of intravaginal implants containing either 1.0 or 1.9 g of P4 either at the first use or during reuse of the implants after sanitizing the implant by autoclave or chemical disinfection. In a completely randomized design with a 2 × 3 factorial arrangement and 2 replicates, every cow underwent 2 of 6 treatments. Two sources of P4 [controlled internal drug release (1.9 g of P4) from Zoetis (São Paulo, Brazil), and Sincrogest (1.0 g of P4) from Ourofino (Cravinhos, Brazil)] and 3 types of processing, new (N), reused after autoclave (RA), and reused after chemical disinfection (RC), were used. After inducing luteolysis to avoid endogenous circulating P4, the cows were randomized in 1 of 6 treatments (1.9 g of N, 1.9 g of RA, 1.9 g of RC, 1.0 g of N, 1.0 g of RA, and 1.0 g RC). Cows were treated with the implants for 8 d and during this period blood samples were collected at 0, 2, 12, 24, 48, 72, 96, 120, 144, 168, and 192 h. Statistical analyses were performed using Proc-Mixed and the mean ± standard error of the mean P4 concentrations were calculated using the Proc-Means procedures of SAS 9.4 (SAS Institute Inc., Cary, NC). No interaction between treatments was observed. Comparing types of implant, average P4 concentrations during treatments were greater for 1.9 g than 1.0 g (1.46 vs. 1.14 ± 0.04 ng/mL). When types of processing were compared, average P4 concentrations did not differ between autoclaved and new inserts (1.46 vs. 1.37 ± 0.05 ng/mL; respectively), but both were greater than chemically disinfected implants (1.09 ± 0.04 ng/mL). Within 1.9-g P4 inserts, P4 concentrations from autoclaved implants were greater than new, which were greater than chemically disinfected (1.67 ± 0.06 vs. 1.49 ± 0.07 vs. 1.21 ± 0.05 ng/mL; respectively). For 1.0-g P4 implants, P4 concentrations from autoclaved did not differ from new, but both were greater than chemically disinfected (1.20 ± 0.08 vs. 1.24 ± 0.06 vs. 0.97 ± 0.05 ng/mL; respectively). In conclusion, the mean plasma P4 concentration in nonlactating Holstein cows was greater for 1.9 than 1.0 g of P4 and regardless of the type of implant, the autoclaving process provided greater circulating P4 in relation to chemical disinfection, and similar or greater P4 concentrations compared with a new implant. Copyright © 2018 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors

NASA Astrophysics Data System (ADS)

Onaka-Masada, Ayumi; Nakai, Toshiro; Okuyama, Ryosuke; Okuda, Hidehiko; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Kurita, Kazunari; Sueoka, Koji

2018-02-01

The effect of oxygen (O) concentration on the Fe gettering capability in a carbon-cluster (C3H5) ion-implanted region was investigated by comparing a Czochralski (CZ)-grown silicon substrate and an epitaxial growth layer. A high Fe gettering efficiency in a carbon-cluster ion-implanted epitaxial growth layer, which has a low oxygen region, was observed by deep-level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). It was demonstrated that the amount of gettered Fe in the epitaxial growth layer is approximately two times higher than that in the CZ-grown silicon substrate. Furthermore, by measuring the cathodeluminescence, the number of intrinsic point defects induced by carbon-cluster ion implantation was found to differ between the CZ-grown silicon substrate and the epitaxial growth layer. It is suggested that Fe gettering by carbon-cluster ion implantation comes through point defect clusters, and that O in the carbon-cluster ion-implanted region affects the formation of gettering sinks for Fe.

Ion implantation enhanced metal-Si-metal photodetectors

NASA Astrophysics Data System (ADS)

Sharma, A. K.; Scott, K. A. M.; Brueck, S. R. J.; Zolper, J. C.; Myers, D. R.

1994-05-01

The quantum efficiency and frequency response of simple Ni-Si-Ni metal-semiconductor-metal (MSM) photodetectors at long wavelengths are significantly enhanced with a simple, ion-implantation step to create a highly absorbing region approx. 1 micron below the Si surface. The internal quantum efficiency is improved by a factor of approx. 3 at 860 nm (to 64%) and a full factor of ten at 1.06 microns (to 23%) as compared with otherwise identical unimplanted devices. Dark currents are only slightly affected by the implantation process and are as low as 630 pA for a 4.5-micron gap device at 10-V bias. Dramatic improvement in the impulse response is observed, 100 ps vs. 600 ps, also at 10-V bias and 4.5-micron gap, due to the elimination of carrier diffusion tails in the implanted devices. Due to its planar structure, this device is fully VLSI compatible. Potential applications include optical interconnections for local area networks and multi-chip modules.

A universal sample manipulator with 50 kV negative bias

NASA Astrophysics Data System (ADS)

Kenny, M. J.; Wielunski, L. S.; Scott, M. D.; Clissold, R. A.; Stevenson, D.; Baxter, G.

1991-04-01

A manipulator incorporating a number of novel features has been built for a research ion implanter. The system is designed to enable uniform dose implantation of both planar and nonplanar surfaces by incorporating one translational and two rotational degrees of freedom. Negative target bias of up to 50 kV may be applied to the target, thus increasing the ion energy by this amount. The target chamber and all external manipulator controls are grounded. With the exception of the high voltage power supply, cable and feedthrough, all high voltage components are within the vacuum system. A secondary electron suppression cage which can be held at a negative bias of up to 60 kV relative to the chamber (i.e. 10 kV relative to the manipulator) surrounds the manipulator. Performance has been evaluated using 15N ions and nuclear reaction analysis through 15N(p,α) 12C to profile ion concentrations for dose uniformity and for ion depth at elevated target potentials.

Method of fabricating optical waveguides by ion implantation doping

DOEpatents

Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

1987-03-24

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

Optical planar waveguides in photo-thermal-refractive glasses fabricated by single- or double-energy carbon ion implantation

NASA Astrophysics Data System (ADS)

Wang, Yue; Shen, Xiao-Liang; Zheng, Rui-Lin; Guo, Hai-Tao; Lv, Peng; Liu, Chun-Xiao

2018-01-01

Ion implantation has demonstrated to be an efficient and reliable technique for the fabrication of optical waveguides in a diversity of transparent materials. Photo-thermal-refractive glass (PTR) is considered to be durable and stable holographic recording medium. Optical planar waveguide structures in the PTR glasses were formed, for the first time to our knowledge, by the C3+-ion implantation with single-energy (6.0 MeV) and double-energy (5.5+6.0 MeV), respectively. The process of the carbon ion implantation was simulated by the stopping and range of ions in matter code. The morphologies of the waveguides were recorded by a microscope operating in transmission mode. The guided beam distributions of the waveguides were measured by the end-face coupling technique. Comparing with the single-energy implantation, the double-energy implantation improves the light confinement for the dark-mode spectrum. The guiding properties suggest that the carbon-implanted PTR glass waveguides have potential for the manufacture of photonic devices.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, Ka-Ngo

1996-01-01

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Production technology for high efficiency ion implanted solar cells

NASA Technical Reports Server (NTRS)

Kirkpatrick, A. R.; Minnucci, J. A.; Greenwald, A. C.; Josephs, R. H.

1978-01-01

Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

Photosensitivity enhancement of PLZT ceramics by positive ion implantation

DOEpatents

Land, Cecil E.; Peercy, Paul S.

1983-01-01

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

Enhancement of butanol tolerance and butanol yield in Clostridium acetobutylicum mutant NT642 obtained by nitrogen ion beam implantation.

PubMed

Liu, Xiao-Bo; Gu, Qiu-Ya; Yu, Xiao-Bin; Luo, Wei

2012-12-01

As a promising alternative biofuel, biobutanol can be produced through acetone/butanol/ethanol (ABE) fermentation. Currently, ABE fermentation is still a small-scale industry due to its low production and high input cost. Moreover, butanol toxicity to the Clostridium fermentation host limits the accumulation of butanol in the fermentation broth. The wild-type Clostridium acetobutylicum D64 can only produce about 13 g butanol/L and tolerates less than 2% (v/v) butanol. To improve the tolerance of C. acetobutylicum D64 for enhancing the production of butanol, nitrogen ion beam implantation was employed and finally five mutants with enhanced butanol tolerance were obtained. Among these, the most butanol tolerant mutant C. acetobutylicum NT642 can tolerate above 3% (v/v) butanol while the wide-type strain can only withstand 2% (v/v). In batch fermentation, the production of butanol and ABE yield of C. acetobutylicum NT642 was 15.4 g/L and 22.3 g/L, respectively, which were both higher than those of its parental strain and the other mutants using corn or cassava as substrate. Enhancing butanol tolerance is a great precondition for obtaining a hyper-yield producer. Nitrogen ion beam implantation could be a promising biotechnology to improve butanol tolerance and production of the host strain C. acetobutylicum.

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

DOE PAGES

Young, David L.; Nemeth, William; LaSalvia, Vincenzo; ...

2016-06-01

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO 2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm -2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nmmore » thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV oc) values of 730 mV with J o values of 2 fA/cm 2. Samples doped with B 2H 6 gave iV oc values of 690 mV and J o values of 24 fA/cm 2, outperforming BF 3 doping, which gave iV oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.« less

Heavy doping of CdTe single crystals by Cr ion implantation

NASA Astrophysics Data System (ADS)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Stability of cp-Ti and Ti-6Al-4V alloy for dental implants as a function of saliva pH - an electrochemical study.

PubMed

Barão, Valentim A R; Mathew, Mathew T; Assunção, Wirley Gonçalves; Yuan, Judy Chia-Chun; Wimmer, Markus A; Sukotjo, Cortino

2012-09-01

To investigate the role of different levels of pH of artificial saliva under simulated oral environment on the corrosion behavior of commercially pure titanium (cp-Ti) and Ti-6Al-4V alloy. Special attention is given to understand the changes in corrosion kinetics and surface characterization of Ti by using electrochemical impedance spectroscopy (EIS). Fifty-four Ti disks (15-mm diameter, 2-mm thickness) were divided into six groups (n = 9) as a function of saliva pH (3, 6.5, and 9) and Ti type. Samples were mechanically polished using standard metallographic procedures. Standard electrochemical tests, such as open circuit potential, EIS, and potentiodynamic tests were conducted in a controlled environment. Data were evaluated by two-way ANOVA, Tukey multiple comparison test, and independent t-test (α = 0.05). Ti surfaces were examined using white-light-interferometry microscopy and scanning electron microscopy (SEM). Saliva pH level significantly affected the corrosion behavior of both Ti types. At low pH, acceleration of ions exchange between Ti and saliva, and reduction of resistance of Ti surface against corrosion were observed (P < 0.05). Corrosion rate was also significantly increased in acidic medium (P < 0.05). Similar corrosion behavior was observed for both Ti types. The white-light-interferometry images of Ti surfaces show higher surface changes at low pH level. SEM images do not show detectable changes. No pitting corrosion was observed for any group. The pH level of artificial saliva influences the corrosion behavior of cp-Ti and Ti-6Al-4V alloy in that lower pH accelerates the corrosion rate and kinetics. The corrosion products may mitigate the survival rate of dental implants. © 2011 John Wiley & Sons A/S.

Silver ion doped ceramic nano-powder coated nails prevent infection in open fractures: In vivo study.

PubMed

Kose, Nusret; Çaylak, Remzi; Pekşen, Ceren; Kiremitçi, Abdurrahman; Burukoglu, Dilek; Koparal, Savaş; Doğan, Aydın

2016-02-01

Despite improvement in operative techniques and antibiotic therapy, septic complications still occur in open fractures. We developed silver ion containing ceramic nano powder for implant coating to provide not only biocompatibility but also antibacterial activity to the orthopaedic implants. We hypothesised silver ion doped calcium phosphate based ceramic nano-powder coated titanium nails may prevents bacterial colonisation and infection in open fractures as compared with uncoated nails. 33 rabbits divided into three groups. In the first group uncoated, in the second group hydroxyapatite coated, and in the third group silver doped hydroxyapatite coated titanium nails were inserted left femurs of animals from knee regions with retrograde fashion. Before implantation of nails 50 μl solution containing 10(6)CFU/ml methicillin resistance Staphylococcus aureus (MRSA) injected intramedullary canal. Rabbits were monitored for 10 weeks. Blood was taken from rabbits before surgery and on 2nd, 6th and 10th weeks. Blood was analysed for biochemical parameters, blood count, C-reactive protein and silver levels. At the end of the 10 weeks animals were sacrificed and rods were extracted in a sterile fashion. Swab cultures were taken from intramedullary canal. Bacteria on titanium rods were counted. Liver, heart, spleen, kidney and central nervous tissues samples were taken for determining silver levels. Histopathological evaluation of bone surrounding implants was also performed. No significant difference was detected between the groups from hematologic, biochemical, and toxicological aspect. Microbiological results showed that less bacterial growth was detected with the use of silver doped ceramic coated implants compared to the other two groups (p=0.003). Accumulation of silver was not detected. No cellular inflammation was observed around the silver coated prostheses. No toxic effect of silver on bone cells was seen. Silver ion doped calcium phosphate based ceramic nano powder coating to orthopaedic implants may prevents bacterial colonisation and infection in open fractures compared with those for implants without any coating. Copyright © 2015 Elsevier Ltd. All rights reserved.

Correlation Between Resonance Frequency Analysis and Bone Quality Assessments at Dental Implant Recipient Sites.

PubMed

Fu, Min-Wen; Fu, Earl; Lin, Fu-Gong; Chang, Wei-Jeng; Hsieh, Yao-Dung; Shen, E-Chin

To evaluate whether primary implant stability could be used to predict bone quality, the association between the implant stability quotient (ISQ) value and the bone type at the implant site was evaluated. Ninety-five implant sites in 50 patients were included. Bone type (categorized by Lekholm and Zarb) at the implant site was initially assessed using presurgical dental radiography. During the preparation of the implant site, a bone core specimen was carefully obtained. The bone type was assessed by tactile sensation during the drilling operation, according to the Misch criteria. The primary stability of the inserted implant was evaluated by resonance frequency analysis (RFA). The ISQ value was recorded. The bone core specimen was then examined by stereomicroscopy or microcomputed tomography (micro-CT), and the bone type was determined by the surface characteristics of the specimen, based on Lekholm and Zarb classification. Agreement between the bone quality assessed by the four methods (ie, presurgical radiography, tactile sensation, stereomicroscopy, and micro-CT) was tested by Cohen's kappa statistics, whereas the association between the ISQ value and the bone type was evaluated by the generalized linear regression model. The mean ISQ score was 72.6, and the score was significantly influenced by the maxillary or mandibular arch (P = .001). The bone type at the implant sites varied according to the assessment method. However, a significant influence of the arch was repeatedly noted when using radiography or tactile sensation. Among the four bone-quality assessment methods, a weak agreement existed only between stereomicroscopy and micro-CT, especially in the maxilla (κ = 0.469). A negative association between the ISQ value and the bone type assessed by stereomicroscopy or by micro-CT was significant in the maxilla, but not in the mandible, after adjustments for sex, age, and right/left side (P = .013 and P = .027 for stereomicroscopy and micro-CT, respectively). The ISQ value was weakly associated with the bone type when assessed by stereomicroscopy or micro-CT in the maxilla. Caution is necessary if RFA is used as a tool to evaluate bone quality at the implant site, especially in the mandible.

iMAST Quarterly, Number 3, 2000

DTIC Science & Technology

2000-01-01

components which depend on evaporating unit capabilities. There are three components (EB-gun, water cooled copper crucible and vacuum chamber) in the EB-PVD...Ion Implantation and Ion Plating electromagnetic deflected through 180 or 2700. Similarly, evaporant material is placed in a water-cooled copper ... crucible , which could be either pocket type for small quantity evaporation application or continuous ingot feeding through the crucible for larger quantity

Designing functionality in perovskite thin films using ion implantation techniques: Assessment and insights from first-principles calculations

DOE PAGES

Sharma, Vinit K.; Herklotz, Andreas; Ward, Thomas Zac; ...

2017-09-11

Ion implantation has been widely used in the semiconductor industry for decades to selectively control electron/hole doping for device applications. Recently, experimental studies on ion implantation into more structurally and electronically complex materials have been undertaken in which defect generation has been used to control a variety of functional phenomena. Of particular interest, are recent findings demonstrating that low doses of low energy helium ions into single crystal films can be used to tailor the structural properties. These initial experimental studies have shown that crystal symmetry can be continuously controlled by applying increasingly large doses of He ions into amore » crystal. The observed changes in lattice structure were then observed to correlate with functional changes, such as metal-insulator transition temperature2 and optical bandgap3. In these preliminary experimental studies, changes to lattice expansion was proposed to be the direct result of chemical pressure originating predominantly from the implanted He applying chemical pressure at interstitial sites. However, the influence of possible secondary knock-on damage arising from the He atoms transferring energy to the lattice through nuclear-nuclear collision with the crystal lattice remains largely unaddressed. In this work, we focus on a SrRuO3 model system to provide a comprehensive examination of the impact of common defects on structural and electronic properties, obtain calculated defect formation energies, and define defect migration barriers. Our model indicates that, while interstitial He can modify the crystal properties, a dose significantly larger than those reported in experimental studies would be required. The true origin of the observed structural changes is likely the result of a combination of secondary defects created during He implantation. Of particular importance, we observe that different defect types can generate greatly varied local electronic structures and that the formation energies and migration energy barriers vary by defect type. Thus, we may have identified a new method of selectively inducing controlled defect complexes into single crystal materials. Development of this approach would have a broad impact on both our ability to probe specific defect contributions in fundamental studies and allow a new level of control over functional properties driven by specific defect complexes.« less

Shaped versus Round Implants in Breast Reconstruction: A Multi-Institutional Comparison of Surgical and Patient-Reported Outcomes.

PubMed

Khavanin, Nima; Clemens, Mark W; Pusic, Andrea L; Fine, Neil A; Hamill, Jennifer B; Kim, H Myra; Qi, Ji; Wilkins, Edwin G; Kim, John Y S

2017-05-01

Since the 2012 approval of shaped implants, their use in breast reconstruction has increased in the United States. However, large-scale comparisons of complications and patient-reported outcomes are lacking. The authors endeavored to compare surgical and patient-reported outcomes across implant types. The Mastectomy Reconstruction Outcomes Consortium database was queried for expander/implant reconstructions with at least 1-year postexchange follow-up (mean, 18.5 months). Outcomes of interest included postoperative complications, 1-year revisions, and patient-reported outcomes. Bivariate and mixed-effects regression analyses evaluated the effect of implant type on patient outcomes. Overall, 822 patients (73.5 percent) received round and 297 patients (26.5 percent) received shaped implants. Patients undergoing unilateral reconstructions with round implants underwent more contralateral symmetry procedures, including augmentations (round, 18.7 percent; shaped, 6.8 percent; p = 0.003) and reductions (round, 32.2 percent; shaped, 20.5 percent; p = 0.019). Shaped implants were associated with higher rates of infection (shaped, 6.1 percent; round, 2.3 percent; p = 0.002), that remained significant after multivariable adjustment. Other complication rates did not differ significantly between cohorts. Round and shaped implants experienced similar 2-year patient-reported outcome scores. This prospective, multicenter study is the largest evaluating outcomes of shaped versus round implants in breast reconstruction. Although recipients of round implants demonstrated lower infection rates compared with shaped implants, these patients were more likely to undergo contralateral symmetry procedures. Both implant types yielded comparable patient-reported outcome scores. With appropriate patient selection, both shaped and round implants can provide acceptable outcomes in breast reconstruction. Therapeutic, III.

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

NASA Technical Reports Server (NTRS)

Woo, D. S.

1977-01-01

Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented.

Effect of ion implantation on the tribology of metal-on-metal hip prostheses.

PubMed

Bowsher, John G; Hussain, Azad; Williams, Paul; Nevelos, Jim; Shelton, Julia C

2004-12-01

Nitrogen ion implantation (which considerably hardens the surface of the bearing) may represent one possible method of reducing the wear of metal-on-metal (MOM) hip bearings. Currently there are no ion-implanted MOM bearings used clinically. Therefore a physiological hip simulator test was undertaken using standard test conditions, and the results compared to previous studies using the same methods. N2-ion implantation of high carbon cast Co-Cr-Mo-on-Co-Cr-Mo hip prostheses increased wear by 2-fold during the aggressive running-in phase compared to untreated bearing surfaces, plus showing no wear reductions during steady-state conditions. Although 2 specimens were considered in the current study, it would appear that ion implantation has no clinical benefit for MOM.

Surface modification by carbon ion implantation for the application of ni-based amorphous alloys as bipolar plate in proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Kim, Min-Uk; Kim, Do-Hyang; Han, Seung-hee; Fleury, Eric; Seok, Hyun-Kwang; Cha, Pil-Ryung; Kim, Yu-Chan

2011-04-01

Ni-based amorphous alloys with surface modification by carbon ion implantation are proposed as an alternative bipolar plate material for polymer electrolyte membrane fuel cells (PEMFCs). Both Ni60Nb20Ti10Zr10 alloys with and without carbon ion implantation have corrosion resistance as good as graphite as well as much lower contact resistance than 316L stainless steel in the PEMFC environment. The formation of conductive surface carbide due to carbon ion implantation results in a decrease in the contact resistance to a level comparable to that of graphite. This combination of excellent properties indicates that carbon ion implanted Ni-based amorphous alloys can be potential candidate materials for bipolar plates in PEMFCs.

Simulations of Proton Implantation in Silicon Carbide (SiC)

DTIC Science & Technology

2016-03-31

ions in matter (SRIM); transport of ions in matter (TRIM); ion energy; implant depth; defect generation; vacancy; backscattered ions; sputtering...are computer simulations based on transport of ions in matter (TRIM), and stopping and range of ions in matter (SRIM). TRIM is a Monte Carlo

Ion beam sputter modification of the surface morphology of biological implants

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Banks, B. A.

1976-01-01

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

Ion-beam-sputter modification of the surface morphology of biological implants

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Banks, B. A.

1977-01-01

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

Modification of Wetting Properties of PMMA by Immersion Plasma Ion Implantation

NASA Astrophysics Data System (ADS)

Mireault, N.; Ross, G. G.

Advancing and receding contact angles below 5° have been obtained on PMMA surfaces with the implantation of argon and oxygen ions. The ion implantations were performed by means of the Immersion Plasma Ion Implantation (IPII) technique, a hybrid between ion beams and immersion plasmas. Characterization of treated PMMA surfaces by means of XPS and its combination with chemical derivatization (CD-XPS) have revealed the depletion of oxygen and the creation of dangling bonds, together with the formation of new chemical functions such as -OOH, -COOH and C=C. These observations provide a good explanation for the strong increase of the wetting properties of the PMMA surfaces.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, K.N.

1996-09-24

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

Surface modifications of AISI 420 stainless steel by low energy Yttrium ions

NASA Astrophysics Data System (ADS)

Nassisi, Vincenzo; Delle Side, Domenico; Turco, Vito; Martina, Luigi

2018-01-01

In this work, we study surface modifications of AISI 420 stainless steel specimens in order to improve their surface properties. Oxidation resistance and surface micro-hardness were analyzed. Using an ion beam delivered by a Laser Ion Source (LIS) coupled to an electrostatic accelerator, we performed implantation of low energy yttrium ions on the samples. The ions experienced an acceleration passing through a gap whose ends had a potential difference of 60 kV. The gap was placed immediately before the samples surface. The LIS produced high ions fluxes per laser pulse, up to 3x1011 ions/cm2, resulting in a total implanted flux of 7x1015 ions/cm2. The samples were characterized before and after ion implantation using two analytical techniques. They were also thermally treated to investigate the oxide scale. The crystal phases were identified by an X-ray diffractometer, while the micro-hardness was assayed using the scratch test and a profilometer. The first analysis was applied to blank, implanted and thermally treated sample surface, while the latter was applied only to blank and implanted sample surfaces. We found a slight increase in the hardness values and an increase to oxygen resistance. The implantation technique we used has the advantages, with respect to conventional methods, to modify the samples at low temperature avoiding stray diffusion of ions inside the substrate bulk.

Radiation Damage Formation And Annealing In Mg-Implanted GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whelan, Sean; Kelly, Michael J.; Yan, John

2005-06-30

We have implanted GaN with Mg ions over an energy range of 200keV to 1MeV at substrate temperatures of -150 (cold) and +300 deg. C (hot). The radiation damage formation in GaN was increased for cold implants when compared to samples implanted at elevated temperatures. The increase in damage formation is due to a reduction in the dynamic defect annealing during ion irradiation. The dopant stopping in the solid also depends upon the implant temperature. For a fixed implant energy and dose, Mg ions have a shorter range in GaN for cold implants when compared to hot implants which ismore » caused by the increase in scattering centres (disorder)« less

Do ion levels in hip resurfacing differ from metal-on-metal THA at midterm?

PubMed

Moroni, A; Savarino, L; Hoque, M; Cadossi, M; Baldini, N

2011-01-01

Metal-on-metal Birmingham hip resurfacing (MOM-BHR) is an alternative to metal-on-metal total hip arthroplasty (MOM-THA), especially for young and/or active patients. However, wear resulting in increased serum ion levels is a concern. We asked whether (1) serum chromium (Cr), cobalt (Co), and molybdenum (Mo) concentrations would differ between patients with either MOM-BHR or MOM-THA at 5 years, (2) confounding factors such as gender would influence ion levels; and (3) ion levels would differ at 2 and 5 years for each implant type. Ions were measured in two groups with either MOM-BHR (n = 20) or MOM-THA (n = 35) and a mean 5-year followup, and two groups with either MOM-BHR (n = 15) or MOM-THA (n = 25) and a mean 2-year followup. Forty-eight healthy blood donors were recruited for reference values. At 5 years, there were no differences in ion levels between patients with MOM-BHR or MOM-THA. Gender was a confounding factor, and in the MOM-BHR group at 5 years, Cr concentrations were greater in females compared with those of males. Mean ion levels were similar in patients with 2 and 5 years of followup for each implant type. Ion levels in patients were sevenfold to 10-fold higher than in controls. As the metal ion concentrations in the serum at 5 years were in the range reported in the literature, we do not believe concerns regarding excessive metal ion levels after MOM-BHR are justified. Level III, therapeutic study. See the Guidelines for Authors for a complete description of level of evidence.

Method of fabricating optical waveguides by ion implantation doping

DOEpatents

Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

1989-01-01

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

Small-scale characterisation of irradiated nuclear materials: Part II nanoindentation and micro-cantilever testing of ion irradiated nuclear materials

NASA Astrophysics Data System (ADS)

Armstrong, D. E. J.; Hardie, C. D.; Gibson, J. S. K. L.; Bushby, A. J.; Edmondson, P. D.; Roberts, S. G.

2015-07-01

This paper demonstrates the ability of advanced micro-mechanical testing methods, based on FIB machined micro-cantilevers, to measure the mechanical properties of ion implanted layers without the influence of underlying unimplanted material. The first section describes a study of iron-12 wt% chromium alloy implanted with iron ions. It is shown that by careful cantilever design and finite element modelling that changes in yield stress after implantation can be measured even with the influence of a strong size effect. The second section describes a study of tungsten implanted with both tungsten ions and tungsten and helium ions using spherical and sharp nanoindentation, and micro-cantilevers. The spherical indentation allows yield properties and work hardening behaviour of the implanted layers to be measured. However the brittle nature of the implanted tungsten is only revealed when using micro-cantilevers. This demonstrates that when applying micro-mechanical methods to ion implanted layers care is needed to understand the nature of size effects, careful modelling of experimental procedure is required and multiple experimental techniques are needed to allow the maximum amount of mechanical behaviour information to be collected.

High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

NASA Technical Reports Server (NTRS)

Fratello, V. J.; Wolfe, R.; Blank, S. L.; Nelson, T. J.

1984-01-01

Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

Impact of nucleation of carbonaceous clusters on structural, electrical and optical properties of Cr+-implanted PMMA

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Aziz, Uzma

2016-09-01

Specimens of polymethylmethacrylate (PMMA) have been implanted with 400 keV Cr+ ions at different ion fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The possible chemical reactions involved in the nucleation of conjugated carbonaceous clusters in implanted PMMA are discussed. Furthermore, impact of formation of carbonaceous clusters on structural, optical, electrical and morphological properties of implanted PMMA has been examined. The structural modifications in implanted PMMA are observed by Raman spectroscopy. The variation in optical band gap and Urbach energy is measured using UV-visible spectroscopic analysis. The effects of Cr+ ion implantation on electrical and morphological properties are investigated by four-probe apparatus and atomic force microscopy, respectively. The Raman spectroscopic analysis confirmed the formation of carbonaceous clusters with the transformation of implanted layer of PMMA into amorphous carbon. Simultaneously, the optical band gap of implanted PMMA has reduced from 3.13 to 0.85 eV. The increase in Urbach energy favors the decline in band gap together with the structural modification in implanted PMMA. As a result of Cr+ ion implantation, the electrical conductivity of PMMA has improved from 2.14 ± 0.06 × 10-10 S/cm (pristine) to 7.20 ± 0.36 × 10-6 S/cm. The AFM images revealed a decrease in surface roughness with an increment in ion fluence up to 5 × 1014 ions/cm2. The modification in the electrical, optical and structural properties makes the PMMA a promising candidate for its future utilization, as a semiconducting and optically active material, in various fields like plastic electronics and optoelectronic devices.

ITEP MEVVA ion beam for rhenium silicide production.

PubMed

Kulevoy, T; Gerasimenko, N; Seleznev, D; Kropachev, G; Kozlov, A; Kuibeda, R; Yakushin, P; Petrenko, S; Medetov, N; Zaporozhan, O

2010-02-01

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

In vivo evaluation of biofunctionalized implant surfaces with a synthetic peptide (P-15) and its impact on osseointegration. A preclinical animal study.

PubMed

Schmitt, Christian M; Koepple, Markus; Moest, Tobias; Neumann, Konrad; Weisel, Tamara; Schlegel, Karl Andreas

2016-11-01

The overall aim of the study was to investigate a biofunctionalized implant surface with electrochemically deposition of hydroxyapatite and the synthetic peptide (P-15) and its effect on osseointegration. Three modified implant types of ANKYLOS ® C/X implants were used; (1) machined implants used as negative control (M, n = 20), (2) implants with the FRIADENT ® plus surface (grit blasted and acid-etched) used as positive control (P, n = 20), and (3) implants with a biomimetic surface consisting of hydroxyapatite and the synthetic 15 aminoacids containing peptide P-15 (BP, n = 40). The implants were randomly inserted in the mandibles of 10 beagle dogs following 4 months after tooth extraction (P1-P4). Three animals were sacrificed 2 and 7 days after implant insertion, respectively, and four animals were sacrificed 6 months post implant insertion. Bone-to-implant contacts (BICs) were analyzed via histomorphometrical analyses at five different region of interests (ROIs); two at the middle part on either side of the implant (ROI 1/4), two at the apical part of the implant at each side (ROI 2/3), and one at the tip of the implant (ROI 5). All implant surfaces showed a high level of osseointegration and osteoconductivity. The cumulative implant survival rate (CSR) was 93.8%, 100% in the M, 85% in the P, and 95% in the BP group. No statistical difference in BICs at ROI 1/4, 2/3, and 5 could be shown between implant types following 2 and 7 days of healing. BIC values increased in all groups over time. After 6 months of healing the BP group showed superiority in BIC in ROI 2/3 (73.2 ± 15.6%) compared to the P (48.3 ± 10.6%) and M group (66.3 ± 30.2%) with a significant difference between BP and P (P = 0.002). It is hypothesized, that the surface biofunctionalization improves peri-implant bone formation and remodeling, leading to an increased bone-to implant contact. However, within the limitations of the study set-up no benefit in the early phase of osseointegration could be established for dental implants with P-15 containing surface in this study. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Biomechanical and histologic basis of osseodensification drilling for endosteal implant placement in low density bone. An experimental study in sheep.

PubMed

Lahens, Bradley; Neiva, Rodrigo; Tovar, Nick; Alifarag, Adham M; Jimbo, Ryo; Bonfante, Estevam A; Bowers, Michelle M; Cuppini, Marla; Freitas, Helora; Witek, Lukasz; Coelho, Paulo G

2016-10-01

A bone drilling concept, namely osseodensification, has been introduced for the placement of endosteal implants to increase primary stability through densification of the osteotomy walls. This study investigated the effect of osseodensification on the initial stability and early osseointegration of conical and parallel walled endosteal implants in low density bone. Five male sheep were used. Three implants were inserted in the ilium, bilaterally, totaling 30 implants (n=15 conical, and n=15 parallel). Each animal received 3 implants of each type, inserted into bone sites prepared as follows: (i) regular-drilling (R: 2mm pilot, 3.2mm, and 3.8mm twist drills), (ii) clockwise osseodensification (CW), and (iii) counterclockwise (CCW) osseodensification drilling with Densah Bur (Versah, Jackson, MI, USA): 2.0mm pilot, 2.8mm, and 3.8mm multi-fluted burs. Insertion torque as a function of implant type and drilling technique, revealed higher values for osseodensification relative to R-drilling, regardless of implant macrogeometry. A significantly higher bone-to-implant contact (BIC) for both osseodensification techniques (p<0.05) was observed compared to R-drilling. There was no statistical difference in BIC as a function of implant type (p=0.58), nor in bone-area-fraction occupancy (BAFO) as a function of drilling technique (p=0.22), but there were higher levels of BAFO for parallel than conic implants (p=0.001). Six weeks after surgery, new bone formation along with remodeling sites was observed for all groups. Bone chips in proximity with the implants were seldom observed in the R-drilling group, but commonly observed in the CW, and more frequently under the CCW osseodensification technique. In low-density bone, endosteal implants present higher insertion torque levels when placed in osseodensification drilling sites, with no osseointegration impairment compared to standard subtractive drilling methods. Copyright © 2016 Elsevier Ltd. All rights reserved.

Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genisel, Mustafa Fatih; Uddin, Md. Nizam; Say, Zafer

2011-10-01

In this study, we implanted N{sup +} and N{sub 2}{sup +} ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible phase separation routes in boron carbon nitride (BCN) films. In addition, we investigated the effect of implanted C{sup +} ions in sputter deposited amorphous boron nitride (a-BN) films. Implanted ion energies for all ion species were set at 40 KeV. Implanted films were then analyzed using x-ray photoelectron spectroscopy (XPS). The changes in the chemical composition and bonding chemistry due to ion-implantationmore » were examined at different depths of the films using sequential ion-beam etching and high resolution XPS analysis cycles. A comparative analysis has been made with the results from sputter deposited BCN films suggesting that implanted nitrogen and carbon atoms behaved very similar to nitrogen and carbon atoms in sputter deposited BCN films. We found that implanted nitrogen atoms would prefer bonding to carbon atoms in the films only if there is no boron atom in the vicinity or after all available boron atoms have been saturated with nitrogen. Implanted carbon atoms also preferred to either bond with available boron atoms or, more likely bonded with other implanted carbon atoms. These results were also supported by ab-initio density functional theory calculations which indicated that carbon-carbon bonds were energetically preferable to carbon-boron and carbon-nitrogen bonds.« less

Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

NASA Astrophysics Data System (ADS)

Altan, Hakan

All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on transmission and mobility are quantitatively discussed.

Role of stresses in annealing of ion-implantation damage in Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seshan, K.; EerNisse, E.P.

Recent results showing a crystallographic orientation dependence of growth kinetics, secondary defects, and stress relief in annealing of ion-implanted Si are shown to be self-consistent if interpreted in terms of the influence of stresses upon annealing processes. The stress influence proposed is microplastic shear which is induced in (112) directions on (111) planes inclined to the implant surface by the biaxial stress created in the implant region by ion-implantation damage. The shear stresses are shown to be dependent on crystallographic orientation in a manner consistent with the model.

Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

PubMed

Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

2012-06-01

In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

Implantable control, telemetry, and solar energy system in the moving actuator type total artificial heart.

PubMed

Ahn, J M; Lee, J H; Choi, S W; Kim, W E; Omn, K S; Park, S K; Kim, W G; Roh, J R; Min, B G

1998-03-01

The moving actuator type total artificial heart (TAH) developed in the Seoul National University has numerous design improvements based upon the digital signal processor (DSP). These improvements include the implantability of all electronics, an automatic control algorithm, and extension of the battery run-time in connection with an amorphous silicon solar system (SS). The implantable electronics consist of the motor drive, main processor, intelligent Li ion battery management (LIBM) based upon the DSP, telemetry system, and transcutaneous energy transmission (TET) system. Major changes in the implantable electronics include decreasing the temperature rise by over 21 degrees C on the motor drive, volume reduction (40 x 55 x 33 mm, 7 cell assembly) of the battery pack using a Li ion (3.6 V/cell, 900 mA.h), and improvement of the battery run-time (over 40 min) while providing the cardiac output (CO) of 5 L/min at 100 mm Hg afterload when the external battery for testing is connected with the SS (2.5 W, 192.192, 1 kg) for the external battery recharge or the partial TAH drive. The phase locked loop (PLL) based telemetry system was implemented to improve stability and the error correction DSP algorithm programmed to achieve high accuracy. A field focused light emitting diode (LED) was used to obtain low light scattering along the propagation path, similar to the optical property of the laser and miniature sized, mounted on the pancake type TET coils. The TET operating resonance frequency was self tuned in a range of 360 to 410 kHz to provide enough power even at high afterloads. An automatic cardiac output regulation algorithm was developed based on interventricular pressure analysis and carried out in several animal experiments successfully. All electronics have been evaluated in vitro and in vivo and prepared for implantation of the TAH. Substantial progress has been made in designing a completely implantable TAH at the preclinical stage.

Role of clinician's experience and implant design on implant stability. An ex vivo study in artificial soft bones.

PubMed

Romanos, Georgios E; Basha-Hijazi, Abdulaziz; Gupta, Bhumija; Ren, Yan-Fang; Malmstrom, Hans

2014-04-01

Clinical experience in implant placement is important in order to prevent implant failures. However, the implant design affects the primary implant stability (PS) especially in poor quality bones. Therefore, the aim of this study was to compare the effect of clinician surgical experience on PS, when placing different type of implant designs. A total of 180 implants (90 parallel walled-P and 90 tapered-T) were placed in freshly slaughtered cow ribs. Bone quality was evaluated by two examiners during surgery and considered as 'type IV' bone. Implants (ø 5 mm, length: 15 mm, Osseotite, BIOMET 3i, Palm Beach Gardens, FL, USA) were placed by three different clinicians (master/I, good/II, non-experienced/III, under direct supervision of a manufacturer representative; 30 implants/group). An independent observer assessed the accuracy of placement by resonance frequency analysis (RFA) with implant stability quotient (ISQ) values. Two-way analysis of variance (ANOVA) and Tukey's post hoc test were used to detect the surgical experience of the clinicians and their interaction and effects of implant design on the PS. All implants were mechanically stable. The mean ISQ values were: 49.57(± 18.49) for the P-implants and 67.07(± 8.79) for the T-implants. The two-way ANOVA showed significant effects of implant design (p < .0001), clinician (p < .0001), and their interaction (p < .0001). The Tukey's multiple comparison test showed significant differences in RFA for the clinician group I/II (p = .015) and highly significant (p < .0001) between I/III and II/III. The P-implants presented (for I, II, and III) mean ISQ values 31.25/49.18/68.17 and the T-implants showed higher ISQ values, 70.15/62.08/68.98, respectively. Clinicians I and II did not show extreme differences for T-implants (p = .016). In contrast, clinician III achieved high ISQ values using P- and T-implants following the exact surgical protocol based on the manufacturer guidelines. T-implants provided high stability for experienced clinicians compared with P-implants. T-implants achieved greater PS than the P-implants. All clinicians consistently achieved PS; however, experienced clinicians achieved higher ISQ values with T-implants in poor quality bone. © 2012 Wiley Periodicals, Inc.

Ion implantation of highly corrosive electrolyte battery components

DOEpatents

Muller, R.H.; Zhang, S.

1997-01-14

A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, and sodium sulfur. 6 figs.

Ion implantation of highly corrosive electrolyte battery components

DOEpatents

Muller, Rolf H.; Zhang, Shengtao

1997-01-01

A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, end sodium sulfur.

Passivated contact formation using ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Stradins, Pauls; Nemeth, William

2018-05-29

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Electronic excitation effects on nanoparticle formation in insulators under heavy-ion implantation

NASA Astrophysics Data System (ADS)

Kishimoto, N.; Plaksin, O. A.; Masuo, K.; Okubo, N.; Umeda, N.; Takeda, Y.

2006-01-01

Kinetic processes of nanoparticle formation by ion implantation was studied for the insulators of a-SiO2, LiNbO3, MgO · 2.4(Al2O3) and PMMA, either by changing ion flux or by using a co-irradiation technique of ions and photons. Under Cu-implantation of 60 keV Cu-, nanoparticles spontaneously formed without thermal annealing, indicating radiation-induced diffusion of implants. The high-flux implantation caused instable behaviors of nanoparticle morphology in a-SiO2, LiNbO3 and PMMA, i.e. enhanced atomic rearrangement or loss of nanoparticles. The spinel MgO · 2.4(Al2O3) also showed nanoparticle precipitation at 60 keV, but the precipitation tendency is less than the others. Combined irradiation of 3 MeV Cu ions and photons of 2.3 eV or 3.5 eV indicates that the electronic excitation during ion implantation significantly enhances nanoparticle precipitation, greatly depending on photon energy and fluence. The selectivity for photons can be applied to control nanoparticle precipitation.

Fabrication and characterization of carbon/oxygen-implanted waveguides in Nd3+-doped phosphate glasses

NASA Astrophysics Data System (ADS)

Liu, Chun-Xiao; Xu, Jun; Fu, Li-Li; Zheng, Rui-Lin; Zhou, Zhi-Guang; Li, Wei-Nan; Guo, Hai-Tao; Lin, She-Bao; Wei, Wei

2015-06-01

Optical planar waveguides in Nd3+-doped phosphate glasses are fabricated by a 6.0-MeV carbon ion implantation with a dose of 6.0×1014 ions/cm2 and a 6.0-MeV oxygen ion implantation at a fluence of 6.0×1014 ions/cm2, respectively. The guided modes and the corresponding effective refractive indices were measured by a modal 2010 prism coupler. The refractive index profiles of the waveguides were analyzed based on the stopping and range of ions in matter and the RCM reflectivity calculation method. The near-field light intensity distributions were measured and simulated by an end-face coupling method and a finite-difference beam propagation method, respectively. The comparison of optical properties between the carbon-implanted waveguide and the oxygen-implanted waveguide was carried out. The microluminescence and Raman spectroscopy investigations reveal that fluorescent properties of Nd3+ ions and glass microstructure are well preserved in the waveguide region, which suggests that the carbon/oxygen-implanted waveguide is a good candidate for integrated photonic devices.

The effects of argon ion bombardment on the corrosion resistance of tantalum

NASA Astrophysics Data System (ADS)

Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

2017-02-01

Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

Crater function moments: Role of implanted noble gas atoms

NASA Astrophysics Data System (ADS)

Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2018-04-01

Spontaneous pattern formation by energetic ion beams is usually explained in terms of surface-curvature dependent sputtering and atom redistribution in the target. Recently, the effect of ion implantation on surface stability has been studied for nonvolatile ion species, but for the case of noble gas ion beams it has always been assumed that the implanted atoms can be neglected. In this work, we show by molecular dynamics (MD) and Monte Carlo (MC) simulations that this assumption is not valid in a wide range of implant conditions. Sequential-impact MD simulations are performed for 1-keV Ar, 2-keV Kr, and 2-keV Xe bombardments of Si, starting with a pure single-crystalline Si target and running impacts until sputtering equilibrium has been reached. The simulations demonstrate the importance of the implanted ions for crater-function estimates. The atomic volumes of Ar, Kr, and Xe in Si are found to be a factor of two larger than in the solid state. To extend the study to a wider range of energies, MC simulations are performed. We find that the role of the implanted ions increases with the ion energy although the increase is attenuated for the heavier ions. The analysis uses the crater function formalism specialized to the case of sputtering equilibrium.

The influence of nitrogen ion implantation on the tribological properties of piston rings made of Hardox and Raex steels

NASA Astrophysics Data System (ADS)

Budzyński, P.; Kamiński, M.; Pyszniak, K.

2016-09-01

The implantation of nitrogen, carbon, and oxygen can be used for enhancing the tribological properties of critical components for internal combustion engines. Hardox and Raex steels have very similar strength parameters as for steel used for piston rings in internal combustion engines. An essential criterion when selecting material for the production of piston rings is a low friction factor and a low wear index. The aim of this study was to determine the extent to which these parameters can be enhanced by nitrogen ion implantation. Samples were implanted with nitrogen ions with 65 keV energy and the fluence of implanted ions set to 1.1017 N + /cm2. Friction and wear measurements were performed on a pin-on disc stand. The results demonstrate that implantation with nitrogen ions significantly reduces the friction factor and wear of Hardox 450 and Raex 400 steels. Implantation can and should be used for enhancing the tribological properties of steel used for friction elements in internal combustion engines, particularly when heat treatment is excluded. Final elements can be subjected to implantation, as the process does not change their dimensions.

Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies

NASA Astrophysics Data System (ADS)

Zolper, J. C.

1997-06-01

Ion implantation is a flexible process technology for introducing an array of doping or compensating impurities into semiconductors. As the crystal quality of the group III-nitride materials continues to improve, ion implantation is playing an enabling role in exploring new dopant species and device structures. In this paper we review the recent developments in ion implantation processing of these materials with a particular emphasis on how this technology has brought new understanding to this materials system. In particular, the use of ion implantation to characterize impurity luminescence, doping, and compensation in III-nitride materials is reviewed. In addition, we address the nature of implantation induced damage in GaN which demonstrates a very strong resistance to amorphization while at the same time forming damage that is not easily removed by thermal annealing. Finally, we review the coupling of implantation with high temperature rapid thermal annealing to better understand the thermal stability of these materials and the redistribution properties of the common dopant (Si, O, Be, Mg, Ca, and Zn).

Improvement of in vitro corrosion and cytocompatibility of biodegradable Fe surface modified by Zn ion implantation

NASA Astrophysics Data System (ADS)

Wang, Henan; Zheng, Yang; Li, Yan; Jiang, Chengbao

2017-05-01

Pure Fe was surface-modified by Zn ion implantation to improve the biodegradable behavior and cytocompatibility. Surface topography, chemical composition, corrosion resistance and cytocompatibility were investigated. Atomic force microscopy, auger electron spectroscopy and X-ray photoelectron spectroscopy results showed that Zn was implanted into the surface of pure Fe in the depth of 40-60 nm and Fe2O3/ZnO oxides were formed on the outmost surface. Electrochemical measurements and immersion tests revealed an improved degradable behavior for the Zn-implanted Fe samples. An approximately 12% reduction in the corrosion potential (Ecorr) and a 10-fold increase in the corrosion current density (icorr) were obtained after Zn ion implantation with a moderate incident ion dose, which was attributed to the enhanced pitting corrosion. The surface free energy of pure Fe was decreased by Zn ion implantation. The results of direct cell culture indicated that the short-term (4 h) cytocompatibility of MC3T3-E1 cells was promoted by the implanted Zn on the surface.

Persistent photoconductivity in oxygen-ion implanted KNbO3 bulk single crystal

NASA Astrophysics Data System (ADS)

Tsuruoka, R.; Shinkawa, A.; Nishimura, T.; Tanuma, C.; Kuriyama, K.; Kushida, K.

2016-12-01

Persistent Photoconductivity (PPC) in oxygen-ion implanted KNbO3 ([001] oriented bulk single crystals; perovskite structure; ferroelectric with a band gap of 3.16 eV)　is studied in air at room temperature to prevent the degradation of its crystallinity caused by the phase transition. The residual hydrogens in un-implanted samples are estimated to be 5×1014 cm-2 from elastic recoil detection analysis (ERDA). A multiple-energy implantation of oxygen ions into KNbO3 is performed using energies of 200, 400, and 600 keV (each ion fluence:1.0×1014 cm-2). The sheet resistance varies from >108 Ω/□ for an un-implanted sample to 1.9×107 Ω/□ for as-implanted one, suggesting the formation of donors due to hydrogen interstitials and oxygen vacancies introduced by the ion implantation. The PPC is clearly observed with ultraviolet and blue LEDs illumination rather than green, red, and infrared, suggesting the release of electrons from the metastable conductive state below the conduction band relating to the charge states of the oxygen vacancy.

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

NASA Technical Reports Server (NTRS)

Woo, D. S.

1980-01-01

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Satoh, Shu; Yoon, Jongyoon; David, Jonathan

2011-01-07

Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafermore » high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.« less

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Guangyang; Li, Cheng, E-mail: lich@xmu.edu.cn; Chen, Chaowen

2016-05-09

Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Gemore » metal-oxide-semiconductor field effect transistors.« less

Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

NASA Astrophysics Data System (ADS)

Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; da Cruz, Nilson C.; Bortoleto, José R. R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

2013-09-01

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, ETauc, of these films were obtained via transmission spectra in the ultraviolet-visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of ETauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased ETauc. The mechanical properties - hardness, elastic modulus and stiffness - of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

The Breeding of a Pigment Mutant Strain of Steroid Hydroxylation Aspergillus Flavus by Low Energy Ion Implantation

NASA Astrophysics Data System (ADS)

Ye, Hui; Ma, Jingming; Feng, Chun; Cheng, Ying; Zhu, Suwen; Cheng, Beijiu

2009-02-01

In the process of the fermentation of steroid C11α-hydroxylgenation strain Aspergillus flavus AF-ANo208, a red pigment is derived, which will affect the isolation and purification of the target product. Low energy ion beam implantation is a new tool for breeding excellent mutant strains. In this study, the ion beam implantation experiments were performed by infusing two different ions: argon ion (Ar+) and nitrogen ion (N+). The results showed that the optimal ion implantation was N+ with an optimum dose of 2.08 × 1015 ions/cm2, with which the mutant strain AF-ANm16 that produced no red pigment was obtained. The strain had high genetic stability and kept the strong capacity of C11α-hydroxylgenation, which could be utilized in industrial fermentation. The differences between the original strain and the mutant strain at a molecular level were analyzed by randomly amplified polymorphic DNA (RAPD). The results indicated that the frequency of variation was 7.00%, which would establish the basis of application investigation into the breeding of pigment mutant strains by low energy ion implantation.

Processing method for forming dislocation-free SOI and other materials for semiconductor use

DOEpatents

Holland, Orin Wayne; Thomas, Darrell Keith; Zhou, Dashun

1997-01-01

A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

NASA Technical Reports Server (NTRS)

Spitzer, M. B.

1983-01-01

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

Association Between Peri-implant Bone Morphology and Marginal Bone Loss: A Retrospective Study on Implant-Supported Mandibular Overdentures.

PubMed

Ding, Qian; Zhang, Lei; Geraets, Wil; Wu, Wuqing; Zhou, Yongsheng; Wismeijer, Daniel; Xie, Qiufei

The present study aimed to explore the association between marginal bone loss and type of peri-implant bony defect determined using a new peri-implant bony defect classification system. A total of 110 patients with implant-supported mandibular overdentures were involved. Clinical information was collected, including gender, age, smoking habit, and the overdenture attachment system used. Peri-implant bony defect types and marginal distances (ie, distance between the marginal bone level and the top of the implant shoulder) of all sites were identified on panoramic radiographs by a single experienced observer. The associations between marginal distance and peri-implant bony defect type, gender, age, smoking habit, attachment system, and time after implantation were investigated using marginal generalized linear models and regression analysis. A total of 83 participants were included in the final sample with a total of 224 implants involving 3,124 implant sites. The mean observation time was 10.7 years. All peri-implant bony defect types except Type 5 (slit-like) were significantly related to marginal distance in all models (P < .01). Smoking and time after implantation were significantly related to marginal distance while gender, age, and the overdenture attachment system used were not. The peri-implant bony defect type, determined using the new classification system, is associated with the extent of marginal bone loss.

Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals: The evaluation of the displacement in oxygen lattices

NASA Astrophysics Data System (ADS)

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

2014-08-01

The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6 × 1020 cm-3) into ZnO is performed using a multiple-step energy. The high resistivity of ∼103 Ω cm in un-implanted samples remarkably decreased to ∼10-2 Ω cm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000 °C annealed ZnO.

The center for production of single-photon emitters at the electrostatic-deflector line of the Tandem accelerator of LABEC (Florence)

NASA Astrophysics Data System (ADS)

Lagomarsino, Stefano; Sciortino, Silvio; Gelli, Nicla; Flatae, Assegid M.; Gorelli, Federico; Santoro, Mario; Chiari, Massimo; Czelusniac, Caroline; Massi, Mirko; Taccetti, Francesco; Agio, Mario; Giuntini, Lorenzo

2018-05-01

The line for the pulsed beam of the 3 MeV Tandetron accelerator at LABEC (Florence) has been upgraded for ion implantation experiments aiming at the fabrication of single-photon emitters in a solid-state matrix. A system based on Al attenuators has been calibrated in order to extend the energy range of the implanted ions from MeV down to the tens of keV. A new motorized XY stage has been installed in the implantation chamber for achieving ultra-fine control on the position of each implanted ion, allowing to reach the scale imposed by lateral straggling. A set-up for the activation of the implanted ions has been developed, based on an annealing furnace operating under controlled high-vacuum conditions. The first experiments have been performed with silicon ions implanted in diamond and the luminescent signal of the silicon-vacancy (SiV) center, peaked at 738 nm, has been observed for a wide range of implantation fluences (108 ÷ 1015 cm-2) and implantation depths (from a few nm to 2.4 μm). Studies on the efficiency of the annealing process have been performed and the activation yield has been measured to range from 1% to 3%. The implantation and annealing facility has thus been tuned for the production of SiV centers in diamond, but is in principle suitable for other ion species and solid-state matrices.

Long-range effect of ion implantation of Raex and Hardox steels

NASA Astrophysics Data System (ADS)

Budzyński, P.; Kamiński, M.; Droździel, A.; Wiertel, M.

2016-09-01

Ion implantation involves introduction of ionized atoms of any element (nitrogen) to metals thanks to the high kinetic energy that they acquired in the electric field. The distribution of nitrogen ions implanted at E = 65 keV energy and D = 1.1017 N+ /cm2 fluence in the steel sample and vacancies produced by them was calculated using the SRIM program. This result was confirmed by RBS measurements. The initial maximum range of the implanted nitrogen ions is ∼⃒0.17 μm. This value is relatively small compared to the influence of nitriding on the thickness surface layer of modified steel piston rings. Measurements of the friction coefficient during the pin-on-disc tribological test were performed under dry friction conditions. The friction coefficient of the implanted sample increased to values characteristic of an unimplanted sample after ca. 1500 measurement cycles. The depth of wear trace is ca. 2.4 μm. This implies that the thickness of the layer modified by the implantation process is ∼⃒2.4 μm and exceeds the initial range of the implanted ions by an order of magnitude. This effect, referred to as a long-range implantation effect, is caused by migration of vacancies and nitrogen atoms into the sample. This phenomenon makes ion implantation a legitimate process of modification of the surface layer in order to enhance the tribological properties of critical components of internal combustion engines such as steel piston rings.

Rolling contact fatigue of surface modified 440C using a 'Ge-Polymet' type disc rod test rig

NASA Technical Reports Server (NTRS)

Thom, Robert L.

1989-01-01

Through hardened 440 C martensitic stainless steel test specimens were surface modified and tested for changes in rolling contact fatigue using a disc on rod test rig. The surface modifications consisted of nitrogen, boron, titanium, chromium, tantalum, carbon, or molybdenum ion implantation at various ion fluences and energies. Tests were also performed on specimens reactively sputtered with titanium nitride.

Effect of Attachment Type on Implant Strain in Maxillary Implant Overdentures: Comparison of Ball, Locator, and Magnet Attachments. Part 1. Overdenture with Palate.

PubMed

Takahashi, Toshihito; Gonda, Tomoya; Maeda, Yoshinobu

Implant overdentures with attachments have been used in clinical practice and the effect of attachments on implant strain has been frequently reported. However, most studies have focused on mandibular overdentures; there are few reports on maxillary overdentures. The purpose of this study was to examine the influence of attachment type on implant strain in maxillary overdentures under various implant configurations. A maxillary edentulous model with implants and experimental overdentures were fabricated. Four strain gauges were attached to each implant, positioned in anterior, premolar, and molar areas. Three types of unsplinted attachments-ball, locator, and magnet-were set on the implants under various implant configurations. A vertical occlusal load of 98 N was applied through the mandibular complete denture, and implant strain was compared using the Kruskal-Wallis test. Ball attachments caused the greatest amount of strain, while magnet attachments caused the least amount under all conditions. For all attachments, two anterior implants caused significantly more strain than four implants (P < .05). No significant difference was observed between subtypes in four-implant configurations except when using locator attachments. When using unsplinted attachments for maxillary implant overdentures, magnet attachments are recommended to reduce implant stress. Using only two implants, especially two anterior implants, is not recommended regardless of attachment type.

Ion implantation of indium gallium arsenide

NASA Astrophysics Data System (ADS)

Almonte, Marlene Isabel

The ternary compound In0.53Ga0.47As, lattice-matched to Inp, is a semiconductor alloy of technological importance for numerous electronic and optoelectronic device applications. One of these applications includes photodiodes to be developed for the 1.3--1.55 mum wavelength range where silica fibers have their lowest optical loss. With a rapid increase in its use there is an essential need to understand the effects of ion implantation of this alloy semiconductor for implant isolation purposes in which highly resistive layers are required. Due to the small band gap (0.75 eV at 300K) of In0.53Ga0.47As, the estimated maximum resistivity is of the order of 1000 O-cm. Implant isolation can be achieved by the implantation of either inert noble gas ions or electrically active ions. Ion bombardment with inert species introduces defects which trap charge carriers. In the case of implant isolation by electrically active ions, the implanted impurities form an electronic level located close to the middle of the bandgap. Studies of the effects of implantation in In0.53Ga0.47 As due to damage by implantation of Ne+ ions and to compensation by implantation of Fe+ ions are reported in this thesis. The former only involves lattice damage related effects while the latter leads to damage and dopant induced compensation. From the Ne+ implantation results it appears that the damage related energy levels in In0.53 Ga0.47M produced by ion bombardment of chemically inactive species, are not sufficiently deep to lead to effective isolation. A higher resistivity of the order of 770 O-cm is achieved with Fe+ implantation, indicating that Fe introduces an energy level deep in the bandgap. The changes in the electrical properties of the layers are correlated to the lattice damage (damage induced effects) and/or the diffusion of the compensating dopants (dopant induced compensation). Structural characterization of the layers is performed with channeling Rutherford Backscattering Spectrometry (RBS). The distribution of the compensating dopants in the as-implanted and annealed layers is examined by Secondary Ion Mass Spectrometry (SIMS). SIMS analysis shows Fe out-diffusion which results in the loss of the semi-insulating electrical characteristics. To further our understanding of Fe diffusion in In0.53Ga0.47As, the diffusion coefficient of Fe is measured for the first time. The diffusivity of Fe was measured to be 4 x 10-13 cm2 s-1 at 550°C. The thermal stability of these damage and compensation induced effects producing implant isolation is discussed in detail.

Hardness depth profile of lattice strained cemented carbide modified by high-energy boron ion implantation

NASA Astrophysics Data System (ADS)

Yoshida, Y.; Matsumura, A.; Higeta, K.; Inoue, T.; Shimizu, S.; Motonami, Y.; Sato, M.; Sadahiro, T.; Fujii, K.

1991-07-01

The hardness depth profiles of cemented carbides which were implanted with high-energy B + ions have been estimated using a dynamic microhardness tester. The B + implantations into (16% Co)-cemented WC alloys were carried out under conditions where the implantation energies were 1-3 MeV and the fluences 1 × 10 17-1 × 10 18ions/cm 2. The profiles show that the implanted layer becomes harder as fluences are chosen at higher values and there is a peak at a certain depth which depends on the implantation energy. In X-ray diffraction (XRD) studies of the implanted surface the broadened refraction peaks of only WC and Co are detected and the increments of lattice strain and of residual stress in the near-surface region are observed. It is supposed that the hardening effect should be induced by an increase in residual stress produced by lattice strain. The hardness depth profile in successive implantation of ions with different energies agrees with the compounded profile of each one of the implantations. It is concluded that the hardness depth profile can be controlled under adequate conditions of implantation.

Fe doped Magnetic Nanodiamonds made by Ion Implantation.

PubMed

Chen, ChienHsu; Cho, I C; Jian, Hui-Shan; Niu, H

2017-02-09

Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

Fe doped Magnetic Nanodiamonds made by Ion Implantation

NASA Astrophysics Data System (ADS)

Chen, Chienhsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

2017-02-01

Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

The Effect of Low Energy Nitrogen Ion Implantation on Graphene Nanosheets

NASA Astrophysics Data System (ADS)

Mishra, Mukesh; Alwarappan, Subbiah; Kanjilal, Dinakar; Mohanty, Tanuja

2018-03-01

Herein, we report the effect 50 keV nitrogen ion implantation at varying fluence on the optical properties of graphene nanosheets (number of layers < 5). Initially, graphene nanosheets synthesized by the direct liquid exfoliation of graphite layers were deposited on a cleaned Si-substrate by drop cast method. These graphene nanosheets are implanted with 50 keV nitrogen-ion beam at six different fluences. Raman spectroscopic results show that the D, D' and G peak get broadened up to the nitrogen ion fluence of 1 × 1015 ions/cm2, while 2D peak of graphene nanosheets disappeared for nitrogen-ions have fluence more than 1014 ions/cm2. However, further increase of fluence causes the indistinguishable superimposition of D, D' and G peaks. Surface contact potential value analysis for ion implanted graphene nanosheets shows the increase in defect concentration from 1.15 × 1012 to 1.98 × 1014 defects/cm2 with increasing the nitrogen ion fluence, which resembles the Fermi level shift towards conduction band. XRD spectra confirmed that the crystallinity of graphene nanosheets was found to tamper with increasing fluence. These results revealed that the limit of nitrogen ion implantation resistant on the vibrational behaviors for graphene nanosheets was 1015 ions/cm2 that opens up the scope of application of graphene nanosheets in device fabrication for ion-active environment and space applications.

Physical and Tribological Characteristics of Ion-Implanted Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

1994-01-01

Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlidis, D.; Cazaux, J.L.; Graffeuil, J.

1988-04-01

The RF small-signal performance of GaAs MESFET's and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess depth influence are theoretically analyzed with the help of a specially developed device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are finally proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FET's and to realize process-tolerant MMIC amplifiers.

Surface and biological evaluation of hydroxyapatite-based coatings on titanium deposited by different techniques.

PubMed

Massaro, C; Baker, M A; Cosentino, F; Ramires, P A; Klose, S; Milella, E

2001-01-01

Hydroxyapatite coatings have been deposited on titanium cp by plasma spray, sol-gel, and sputtering techniques for dental implant applications. The latter two techniques are of current interest, as they allow coatings of micrometer dimensions to be deposited. Coating morphology, composition, and structure have been investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). All coatings were homogeneous and exhibited a rough morphology suitable for implant applications. The sputtered (after annealing), plasma spray, and sol-gel coatings all showed diffraction peaks corresponding to hydroxyapatite. The surface contaminants were observed to be different for the different coating types. The sputtered coatings were found to have a composition most similar to hydroxyapatite; the sol-gel deposits also showed a high concentration of hydroxyl ions. A discrepancy in the Ca/P ratio was observed for the plasma spray coatings, and a small concentration of carbonate ions was found in the sputter-deposited coatings. The in vitro cell-culture studies using MG63 osteoblast-like cells demonstrated the ability of cells to proliferate on the materials tested. The sol-gel coating promotes higher cell growth, greater alkaline phosphatase activity, and greater osteocalcin production compared to the sputtered and plasma-sprayed coatings. Copyright 2001 John Wiley & Sons, Inc.

Is a high serum copper concentration a risk factor for implantation failure?

PubMed

Matsubayashi, Hidehiko; Kitaya, Kotaro; Yamaguchi, Kohei; Nishiyama, Rie; Takaya, Yukiko; Ishikawa, Tomomoto

2017-08-10

Copper-containing contraceptive devices may deposit copper ions in the endometrium, resulting in implantation failure. The deposition of copper ions in many organs has been reported in patients with untreated Wilson's disease. Since these patients sometimes exhibit subfertility and/or early pregnancy loss, copper ions were also considered to accumulate in the uterine endometrium. Wilson's disease patients treated with zinc successfully delivered babies because zinc interfered with the absorption of copper from the gastrointestinal tract. These findings led to the hypothesis that infertile patients with high serum copper concentrations may have implantation failure due to the excess accumulation of copper ions. The relationship between implantation (pregnancy) rates and serum copper concentrations has not yet been examined. The Japanese government recently stated that actual copper intake was higher among Japanese than needed. Therefore, the aim of the present study was to investigate whether serum copper concentrations are related to the implantation (pregnancy) rates of human embryos in vivo. We included 269 patients (age <40 years old) who underwent vitrifying and warming single embryo transfer with a hormone replacement cycle using good blastocysts (3BB or more with Gardner's classification). Serum hCG, copper, and zinc concentrations were measured 16 days after the first date of progesterone replacement. We compared 96 women who were pregnant without miscarriage at 10 weeks of gestation (group P) and 173 women who were not pregnant (group NP). No significant differences were observed in age or BMI between the groups. Copper concentrations were significantly higher in group NP (average 193.2 μg/dL) than in group P (average 178.1 μg/dL). According to the area under the curve (AUC) on the receiver operating characteristic curve for the prediction of clinical pregnancy rates, the Cu/Zn ratio (AUC 0.64, 95% CI 0.54-0.71) was a better predictor than copper or zinc. When we set the cut-off as 1.59/1.60 for the Cu/Zn ratio, sensitivity, specificity, the positive predictive value, and negative predictive value were 0.98, 0.29, 0.71, and 0.88, respectively. Our single-center retrospective study suggests that high serum copper concentrations (high Cu/Zn ratio) are a risk factor for implantation failure.

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

NASA Astrophysics Data System (ADS)

Novaković, M.; Traverse, A.; Popović, M.; Lieb, K. P.; Zhang, K.; Bibić, N.

2012-07-01

We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150°C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1×1017 and 2×1017 ions/cm2. Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-x V x N.

Improved cell viability and hydroxyapatite growth on nitrogen ion-implanted surfaces

NASA Astrophysics Data System (ADS)

Shafique, Muhammad Ahsan; Murtaza, G.; Saadat, Shahzad; Uddin, Muhammad K. H.; Ahmad, Riaz

2017-08-01

Stainless steel 306 is implanted with various doses of nitrogen ions using a 2 MV pelletron accelerator for the improvement of its surface biomedical properties. Raman spectroscopy reveals incubation of hydroxyapatite (HA) on all the samples and it is found that the growth of incubated HA is greater in higher ion dose samples. SEM profiles depict uniform growth and greater spread of HA with higher ion implantation. Human oral fibroblast response is also found consistent with Raman spectroscopy and SEM results; the cell viability is found maximum in samples treated with the highest (more than 300%) dose. XRD profiles signified greater peak intensity of HA with ion implantation; a contact angle study revealed hydrophilic behavior of all the samples but the treated samples were found to be lesser hydrophilic compared to the control samples. Nitrogen implantation yields greater bioactivity, improved surface affinity for HA incubation and improved hardness of the surface.

Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction

PubMed Central

Na, Hyungjoo; Eun, Youngkee; Kim, Min-Ook; Choi, Jungwook; Kim, Jongbaeg

2015-01-01

We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750–900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WOx nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature. PMID:26666843

Study of wettability and cell viability of H implanted stainless steel

NASA Astrophysics Data System (ADS)

Shafique, Muhammad Ahsan; Ahmad, Riaz; Rehman, Ihtesham Ur

2018-03-01

In the present work, the effect of hydrogen ion implantation on surface wettability and biocompatibility of stainless steel is investigated. Hydrogen ions are implanted in the near-surface of stainless steel to facilitate hydrogen bonding at different doses with constant energy of 500 KeV, which consequently improve the surface wettability. Treated and untreated sample are characterized for surface wettability, incubation of hydroxyapatite and cell viability. Contact angle (CA) study reveals that surface wettability increases with increasing H-ion dose. Raman spectroscopy shows that precipitation of hydroxyapatite over the surface increase with increasing dose of H-ions. Cell viability study using MTT assay describes improved cell viability in treated samples as compared to the untreated sample. It is found that low dose of H-ions is more effective for cell proliferation and the cell count decreases with increasing ion dose. Our study demonstrates that H ion implantation improves the surface wettability and biocompatibility of stainless steel.

Effects of He implantation on radiation induced segregation in Cu-Au and Ni-Si alloys

NASA Astrophysics Data System (ADS)

Iwase, A.; Rehn, L. E.; Baldo, P. M.; Funk, L.

Effects of He implantation on radiation induced segregation (RIS) in Cu-Au and Ni-Si alloys were investigated using in situ Rutherford backscattering spectrometry during simultaneous irradiation with 1.5-MeV He and low-energy (100 or 400-keV) He ions at elevated temperatures. RIS during single He ion irradiation, and the effects of pre-implantation with low-energy He ions, were also studied. RIS near the specimen surface, which was pronounced during 1.5-MeV He single-ion irradiation, was strongly reduced under low-energy He single-ion irradiation, and during simultaneous irradiation with 1.5-MeV He and low-energy He ions. A similar RIS reduction was also observed in the specimens pre-implanted with low-energy He ions. The experimental results indicate that the accumulated He atoms cause the formation of small bubbles, which provide additional recombination sites for freely migrating defects.

Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT:PSS layer

NASA Astrophysics Data System (ADS)

Brenes-Badilla, D.; Coutinho, D. J.; Amorim, D. R. B.; Faria, R. M.; Salvadori, M. C.

2018-04-01

In this work, we performed a study on the recovery of the photovoltaic performance of an ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al solar cell after the hole transport layer (PEDOT:PSS) had been degraded by contact with the environment. A device that was fully built in an inert environment exhibited a fill factor (FF) of 0.64, while the device whose hole transport layer was exposed to air presented a FF equal to 0.2. In addition, the J-V characteristic curve of the degraded device did not follow the photovoltaic pattern exhibiting the degenerate S shape. However, the elimination of the deleterious effect was achieved by bombarding gold ions on the contaminated surface of PEDOT:PSS by means of the Metal Plasma Immersion Ion Implantation technique. Due to the low energy of the ionic beam of gold, the implanted gold atoms were located at few nanometers off the surface, forming nanometric clusters, that is, gold nanoparticles. Most probably, the degradation of the J-V photovoltaic curve, represented by the S-kink effect, was caused by the appearance of a potential barrier at PEDOT:PSS/P3HT:PCBM interface, which was demolished by the gold nanoparticles that have work function close to HOMO of P3HT. This S-kink effect was also simulated by using an equivalent circuit model constituted by a two-diode circuit, one of which plays the role of the undesirable potential barrier formed at the PEDOT:PSS/P3HT:PCBM interface. Our analysis shows that deposition of gold nanoparticles next to the interface recovers the good hole injection condition from the PEDOT:PSS into the active layer, restoring the fill factor and the device efficiency.

Synergistic effect of nanotopography and bioactive ions on peri-implant bone response

PubMed Central

Su, Yingmin; Komasa, Satoshi; Li, Peiqi; Nishizaki, Mariko; Chen, Luyuan; Terada, Chisato; Yoshimine, Shigeki; Nishizaki, Hiroshi; Okazaki, Joji

2017-01-01

Both bioactive ion chemistry and nanoscale surface modifications are beneficial for enhanced osseointegration of endosseous implants. In this study, a facile synthesis approach to the incorporation of bioactive Ca2+ ions into the interlayers of nanoporous structures (Ca-nano) formed on a Ti6Al4V alloy surface was developed by sequential chemical and heat treatments. Samples with a machined surface and an Na+ ion-incorporated nanoporous surface (Na-nano) fabricated by concentrated alkali and heat treatment were used in parallel for comparison. The bone response was investigated by microcomputed tomography assessment, sequential fluorescent labeling analysis, and histological and histomorphometric evaluation after 8 weeks of implantation in rat femurs. No significant differences were found in the nanotopography, surface roughness, or crystalline properties of the Ca-nano and Na-nano surfaces. Bone–implant contact was better in the Ca-nano and Na-nano implants than in the machined implant. The Ca-nano implant was superior to the Na-nano implant in terms of enhancing the volume of new bone formation. The bone formation activity consistently increased for the Ca-nano implant but ceased for the Na-nano implant in the late healing stage. These results suggest that Ca-nano implants have promising potential for application in dentistry and orthopedics. PMID:28184162

Electro-optical detection of THz radiation in Fe implanted LiNbO3

NASA Astrophysics Data System (ADS)

Wang, Yuhua; Ni, Hongwei; Zhan, Weiting; Yuan, Jie; Wang, Ruwu

2013-01-01

In this letter, the authors present first observation of terahertz generation from Fe implantation of LiNbO3 crystal substrate. LiNbO3 single crystal is grown by Czochralski method. Metal nanoparticles synthesized by Fe ion implantation were implanted into LiNbO3 single crystal using metal vapor vacuum arc (MEVVA) ion source. 1 kHz, 35 fs laser pulsed centered at 800 nm were focused onto the samples. Terahertz was generated via optical rectification. The findings suggest that under the investigated implantation parameter, a spectral component in excess of 0.44 THz emission were found from Fe ion implantation of LiNbO3.

Retention of ion-implanted-xenon in olivine: Dependence on implantation dose

NASA Technical Reports Server (NTRS)

Melcher, C. L.; Tombrello, T. A.; Burnett, D. S.

1982-01-01

The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.

Development and experimental study of large size composite plasma immersion ion implantation device

NASA Astrophysics Data System (ADS)

Falun, SONG; Fei, LI; Mingdong, ZHU; Langping, WANG; Beizhen, ZHANG; Haitao, GONG; Yanqing, GAN; Xiao, JIN

2018-01-01

Plasma immersion ion implantation (PIII) overcomes the direct exposure limit of traditional beam-line ion implantation, and is suitable for the treatment of complex work-piece with large size. PIII technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PIII device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m3, and maximum vacuum degree is about 5 × 10-4 Pa. The density of RF plasma in homogeneous region is about 109 cm-3, and plasma density in the ion implantation region is about 1010 cm-3. This device can be used for large-size sample material PIII treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.

Effect of silver ion-induced disorder on morphological, chemical and optical properties of poly (methyl methacrylate)

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Saleemi, Farhat; Rafique, M. Shahid; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Aziz, Uzma

2016-11-01

Ion implantation is a versatile technique to tailor the surface properties of polymers in a controlled manner. In the present study, samples of poly (methyl methacrylate) (PMMA) have been implanted with 400 keV silver (Ag+) ion beam to various ion fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The effect of Ag+ ion-induced disorder on morphological, chemical and optical properties of PMMA is analyzed using Atomic Force Microscope (AFM), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible (UV-Vis) spectroscopy. Furthermore, the electrical conductivity of pristine and implanted PMMA is measured using four probe apparatus. The AFM images revealed the growth of nano-sized grainy structures and hillocks above the surface of implanted PMMA. The FTIR spectra confirmed the modifications in chemical structure of PMMA along with the formation of sbnd Cdbnd Csbnd carbon contents. The refractive index, extinction coefficient and photoconductivity of implanted PMMA have been found to increase as a function of ion fluence. Simultaneously, indirect optical band gap is reduced from 3.13 to 0.81 eV at a relatively high fluence (5 × 1015 ions/cm2). A linear correlation has been established between the band gap and Urbach energies. Moreover, the electrical conductivity of Ag+ implanted PMMA has increased from 2.14 × 10-10 (pristine) to 9.6 × 10-6 S/cm.

Electrical and Structural Analysis on the Formation of n-type Junction in Germanium

NASA Astrophysics Data System (ADS)

Aziz, Umar Abdul; Nadhirah Mohamad Rashid, Nur; Rahmah Aid, Siti; Centeno, Anthony; Ikenoue, Hiroshi; Xie, Fang

2017-05-01

Germanium (Ge) has re-emerged as a potential candidate to replace silicon (Si) as a substrate, due to its higher carrier mobility properties that are the key point for the realization of devices high drive current. However, the fabrication process of Ge is confronted with many problems such as low dopant electrical activation and the utilization of heavy n-type dopant atoms during ion implantation. These problems result in more damage and defects that can affect dopant activation. This paper reports the electrical and structural analysis on the formation of n-type junction in Ge substrate by ion implantation, followed by excimer laser annealing (ELA) using KrF laser. ELA parameters such as laser fluences were varied from 100 - 2000 mJ/cm2 and shot number between 1 - 1000 to obtain the optimized parameter of ELA with a high degree of damage and defect removal. Low resistance with a high degree of crystallinity is obtained for the samples annealed with less than five shot number. Higher shot number with high laser fluence, shows a high degree of ablation damage.

Thermal annealing behavior of nano-size metal-oxide particles synthesized by ion implantation in Fe-Cr alloy

NASA Astrophysics Data System (ADS)

Zheng, C.; Gentils, A.; Ribis, J.; Borodin, V. A.; Descoins, M.; Mangelinck, D.; Dalle, F.; Arnal, B.; Delauche, L.

2017-05-01

Oxide dispersion strengthened (ODS) steels are promising structural materials for the next generation nuclear reactors, as well as fusion facilities. The detailed understanding of the mechanisms involved in the precipitation of nano-oxides during ODS steel production would strongly contribute to the improvement of the mechanical properties and the optimization of manufacturing of ODS steels, with a potentially strong economic impact for their industrialization. A useful tool for the experimental study of nano-oxide precipitation is ion implantation, a technique that is widely used to synthesize precipitate nanostructures in well-controlled conditions. Earlier, we have demonstrated the feasibility of synthesizing aluminum-oxide particles in the high purity Fe-10Cr alloy by consecutive implantation with Al and O ions at room temperature. This paper describes the effects of high-temperature annealing after the ion implantation stage on the development of the aluminum based oxide nanoparticle system. Using transmission electron microscopy and atom probe tomography experiments, we demonstrate that post-implantation heat treatment induces the growth of the nano-sized oxides in the implanted region and nucleation of new oxide precipitates behind the implantation zone as a result of the diffusion driven broadening of implant profiles. A tentative scenario for the development of metal-oxide nano-particles at both ion implantation and heat treatment stages is suggested based on the experimental observations.

High Density Ion Implanted Contiguous Disk Bubble Technology

DTIC Science & Technology

1989-03-31

Annealing," J. Appl. Phys., Vol. 43, No. 6, June, 1972, pp. 2883-2885. (4.14] P. Roschmann , W. Tolksdorf, and F. Welz, "Annealing Effects on Cation...706.I I * 57 [4.15] P. Roschmann , "Redistribution Kinetics of Ga and Al Substitutions in Yttrium Iron Garnet," Journal of Magnetism and Magnetic

Ultrahigh-current-density metal-ion implantation and diamondlike-hydrocarbon films for tribological applications

NASA Astrophysics Data System (ADS)

Wilbur, P. J.

1993-09-01

The metal-ion-implantation system used to implant metals into substrates are described. The metal vapor required for operation is supplied by drawing sufficient electron current from the plasma discharge to an anode-potential crucible so a solid, pure metal placed in the crucible will be heated to the point of vaporization. The ion-producing, plasma discharge is initiated within a graphite-ion-source body, which operates at high temperature, by using an argon flow that is turned off once the metal vapor is present. Extraction of ion beams several cm in diameter at current densities ranging to several hundred micro-A/sq cm on a target 50 cm downstream of the ion source were demonstrated using Mg, Ag, Cr, Cu, Si, Ti, V, B, and Zr. These metals were implanted into over 100 substrates (discs, pins, flats, wires). A model describing thermal stresses induced in materials (e.g. ceramic plates) during high-current-density implantation is presented. Tribological and microstructural characteristics of iron and 304-stainless-steel samples implanted with Ti or B are examined. Diamondlike-hydrocarbon coatings were applied to steel surfaces and found to exhibit good tribological performance.

Compositional transformations in ion implanted polymers

NASA Astrophysics Data System (ADS)

Abdul-Kader, A. M.; Turos, A.; Grambole, D.; Jagielski, J.; Piątkowska, A.; Madi, N. K.; Al-Maadeed, M.

2005-10-01

Changes of surface layer composition produced by ion bombardment of polyethylene and polypropylene samples were studied. These materials are under consideration for load bearing surfaces in biological and technical applications. To improve their tribological properties, surface layers are usually modified by ionizing radiation. Therefore, to study the mechanism of transformations induced by ion beam bombardment selected polymers were implanted with H, He and Ar ions to the fluences ranging from 1 × 1013 to 2 × 1016/cm2. RBS and NRA techniques were applied for sample analysis. Important hydrogen release was observed with increasing ion dose and was correlated with the ion stopping power. Another important effect observed was the rapid oxidation of samples, which apparently occurs after exposure of implanted samples to the air. Up to 10 at.% of oxygen can be incorporated in the implanted layer.

Magnesium ion implantation on a micro/nanostructured titanium surface promotes its bioactivity and osteogenic differentiation function

PubMed Central

Wang, Guifang; Li, Jinhua; Zhang, Wenjie; Xu, Lianyi; Pan, Hongya; Wen, Jin; Wu, Qianju; She, Wenjun; Jiao, Ting; Liu, Xuanyong; Jiang, Xinquan

2014-01-01

As one of the important ions associated with bone osseointegration, magnesium was incorporated into a micro/nanostructured titanium surface using a magnesium plasma immersion ion-implantation method. Hierarchical hybrid micro/nanostructured titanium surfaces followed by magnesium ion implantation for 30 minutes (Mg30) and hierarchical hybrid micro/nanostructured titanium surfaces followed by magnesium ion implantation for 60 minutes (Mg60) were used as test groups. The surface morphology, chemical properties, and amount of magnesium ions released were evaluated by field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, field-emission transmission electron microscopy, and inductively coupled plasma-optical emission spectrometry. Rat bone marrow mesenchymal stem cells (rBMMSCs) were used to evaluate cell responses, including proliferation, spreading, and osteogenic differentiation on the surface of the material or in their medium extraction. Greater increases in the spreading and proliferation ability of rBMMSCs were observed on the surfaces of magnesium-implanted micro/nanostructures compared with the control plates. Furthermore, the osteocalcin (OCN), osteopontin (OPN), and alkaline phosphatase (ALP) genes were upregulated on both surfaces and in their medium extractions. The enhanced cell responses were correlated with increasing concentrations of magnesium ions, indicating that the osteoblastic differentiation of rBMMSCs was stimulated through the magnesium ion function. The magnesium ion-implanted micro/nanostructured titanium surfaces could enhance the proliferation, spreading, and osteogenic differentiation activity of rBMMSCs, suggesting they have potential application in improving bone-titanium integration. PMID:24940056

Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhardt, Fabien; Muller, Dominique; Slaoui, Abdelilah, E-mail: abdelilah.slaoui@unistra.fr

2016-05-07

Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size ofmore » the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.« less

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

The Impact of In Vitro Accelerated Aging, Approximating 30 and 60 Years In Vivo, on Commercially Available Zirconia Dental Implants.

PubMed

Monzavi, Mona; Noumbissi, Sammy; Nowzari, Hessam

2017-04-01

Despite increased popularity of Zirconia dental implants, concerns have been raised regarding low temperature degradation (LTD) and its effect on micro-structural integrity. This study evaluated the effect of LTD on four types of Zirconia dental implants at 0, 30, and 60 years of artificial aging. The impact of aging on t-m transformation and micro crack formation was measured. Accelerated aging at 15 and 30 hours, approximating 30 and 60 years in vivo, aged 36 Zirconia dental implants: Z systems ® (A), Straumann ® (B), Ceraroot ® (C), and Zeramex ® (D). Focused ion beam-scanning electron microscopic analysis determined the micro structural features, phase transformation, and the formation of micro cracks. At 15 hours, type A implant presented with micro cracks and t-m transformation of 0.9 µm and 3.1 µm, respectively. At 30 hours, micro cracks remained shallow (1 µm). At 15 hours, type B implant presented micro cracks (0.7 µm) and grain transformation (1.2 µm). At 30 hours, these features remained superficial at 0.6 and 1.5 µm, respectively. Type C implant presented surface micro cracks of 0.3 µm at 15 hours. The depth of t-m transformation slightly increased to 1.4 µm. At 30 hours, number of micro cracks increased at the surface to an average depth of 1.5 µm. Depth of t-m transformation increased to an average of 2.5 µm. At 15 hours, micro cracks remained superficial (0.8 µm) for type D implant and depth of t-m transformation increased to 2.3 µm. At 30 hours, the depth of micro cracks increased to an average of 1.3 µm followed by increased t-m transformation to a depth of 4.1 µm. Depth of grain transformation remained within 1-4 µm from the surface. The effect of aging was minimal for all Zirconia implants. © 2016 Wiley Periodicals, Inc.

A role for ion implantation in quantum computing

NASA Astrophysics Data System (ADS)

Jamieson, David N.; Prawer, Steven; Andrienko, Igor; Brett, David A.; Millar, Victoria

2001-04-01

We propose to create arrays of phosphorus atoms in silicon for quantum computing using ion implantation. Since the implantation of the ions is essentially random, the yield of usefully spaced atoms is low and therefore some method of registering the passage of a single ion is required. This can be accomplished by implantation of the ions through a thin surface layer consisting of resist. Changes to the chemical and/or electrical properties of the resist will be used to mark the site of the buried ion. For chemical changes, the latent damage will be developed and the atomic force microscope (AFM) used to image the changes in topography. Alternatively, changes in electrical properties (which obviate the need for post-irradiation chemical etching) will be used to register the passage of the ion using scanning tunneling microscopy (STM), the surface current imaging mode of the AFM. We address the central issue of the contrast created by the passage of a single ion through resist layers of PMMA and C 60.

Low-temperature positron annihilation study of B+-ion implanted PMMA

NASA Astrophysics Data System (ADS)

Kavetskyy, T. S.; Tsmots, V. M.; Voloshanska, S. Ya.; Šauša, O.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Y. N.; Stepanov, A. L.

2014-08-01

Temperature dependent positron annihilation lifetime spectroscopy (PALS) measurements in the range of 50-300 K are carried out to study positronium formation in 40 KeV B+-ion implanted polymethylmethacrylate (B:PMMA) with two ion doses of 3.13 × 1015 and 3.75 × 1016 ions/cm2. The investigated samples show the various temperature trends of ortho-positronium (o-Ps) lifetime τ3 and intensity I3 in PMMA before and after ion implantation. Two transitions in the vicinity of ˜150 and ˜250 K, ascribed to γ and β transitions, respectively, are observed in the PMMA and B:PMMA samples in consistent with reference data for pristine sample. The obtained results are compared with room temperature PALS study of PMMA with different molecular weight (Mw) which known from literature. It is found that B+-ion implantation leads to decreasing Mw in PMMA at lower ion dose. At higher ion dose the local destruction of polymeric structure follows to broadening of lifetime distribution (hole size distribution).

Radiation damage in high voltage silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H., Jr.; Swartz, C. K.; Weizer, V. G.

1980-01-01

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Development of Bipolar Pulse Accelerator for Pulsed Ion Beam Implantation to Semiconductor

NASA Astrophysics Data System (ADS)

Masugata, Katsumi; Kawahara, Yoshihiro; Mitsui, Chihiro; Kitamura, Iwao; Takahashi, Takakazu; Tanaka, Yasunori; Tanoue, Hisao; Arai, Kazuo

2002-12-01

To improve the purity of the ion beams new type of pulsed power ion accelerator named "bipolar pulse accelerator" was proposed. The accelerator consists of two acceleration gaps (an ion source gap and a post acceleration gap) and a drift tube, and a bipolar pulse is applied to the drift tube to accelerate the beam. In the accelerator intended ions are selectively accelerated and the purity of the ion beam is enhanced. As the first step of the development of the accelerator, a Br-type magnetically insulated acceleration gap is developed. The gap has an ion source of coaxial gas puff plasma gun on the grounded anode and a negative pulse is applied to the cathode to accelerate the ion beam. By using the plasma gun, ion source plasma (nitrogen) of current density around 100 A/cm2 is obtained. In the paper, the experimental results of the evaluation of the ion beam and the characteristics of the gap are shown with the principle and the design concept of the proposed accelerator.

Comparison of peri-implant bone formation around injection-molded and machined surface zirconia implants in rabbit tibiae

PubMed Central

Kim, Hong-Kyun; Woo, Kyung mi; Shon, Won-Jun; Ahn, Jin-Soo; Cha, Seunghee; Park, Young-Seok

2017-01-01

The aim of this study was to compare osseointegration and surface characteristics of zirconia implants made by the powder injection molding (PIM) technique and made by the conventional milling procedure in rabbit tibiae. Surface characteristics of 2 types of implant were evaluated. Sixteeen rabbits received 2 types of external hex implants with similar geometry, machined zirconia implants and PIM zirconia implants, in the tibiae. Removal torque tests and histomorphometric analyses were performed. The roughness of PIM zirconia implants was higher than that of machined zirconia implants. The PIM zirconia implants exhibited significantly higher bone-implant contact and removal torque values than the machined zirconia implants (P < 0.001). The osseointegration of the PIM zirconia implant is promising, and PIM, using the roughened mold etching technique, can produce substantially rough surfaces on zirconia implants. PMID:26235717

Development of the ion source for cluster implantation

NASA Astrophysics Data System (ADS)

Kulevoy, T. V.; Seleznev, D. N.; Kozlov, A. V.; Kuibeda, R. P.; Kropachev, G. N.; Alexeyenko, O. V.; Dugin, S. N.; Oks, E. M.; Gushenets, V. I.; Hershcovitch, A.; Jonson, B.; Poole, H. J.

2014-02-01

Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.

Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, Koichi, E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Yokoyama, Masafumi; Kim, Sanghyeon

2014-01-21

We study the metal-GaSb alloy formation, the structural properties and the electrical characteristics of the metal-alloy/GaSb diodes by employing metal materials such as Ni, Pd, Co, Ti, Al, and Ta, in order to clarify metals suitable for GaSb p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) as metal-GaSb alloy source/drain (S/D). It is found that Ni, Pd, Co, and Ti can form alloy with GaSb by rapid thermal annealing at 250, 250, 350, and 450 °C, respectively. The Ni-GaSb and Pd-GaSb alloy formation temperature of 250 °C is lower than the conventional dopant activation annealing for ion implantation, which enable us to lower the processmore » temperature. The alloy layers show lower sheet resistance (R{sub Sheet}) than that of p{sup +}-GaSb layer formed by ion implantation and activation annealing. We also study the electrical characteristics of the metal-alloy/GaSb junctions. The alloy/n-GaSb contact has large Schottky barrier height (ϕ{sub B}) for electrons, ∼0.6 eV, and low ϕ{sub B} for holes, ∼0.2 eV, which enable us to realize high on/off ratio in pMOSFETs. We have found that the Ni-GaSb/GaSb Schottky junction shows the best electrical characteristics with ideal factor (n) of 1.1 and on-current/off-current ratio (I{sub on}/I{sub off}) of ∼10{sup 4} among the metal-GaSb alloy/GaSb junctions evaluated in the present study. These electrical properties are also superior to those of a p{sup +}-n diode fabricated by Be ion implantation with activation annealing at 350 °C. As a result, the Ni-GaSb alloy can be regarded as one of the best materials to realize metal S/D in GaSb pMOSFETs.« less

Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

NASA Astrophysics Data System (ADS)

Szilágyi, E.; Bányász, I.; Kótai, E.; Németh, A.; Major, C.; Fried, M.; Battistig, G.

2015-03-01

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1-2 ×1016 Ar/cm2 and 2.5 ×1016 Zn/cm2, respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.

Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Meyer, M. L.; Ling, J. S.

1977-01-01

An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

Electrostatically defined silicon quantum dots with counted antimony donor implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P.

2016-02-08

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Electrostatically defined silicon quantum dots with counted antimony donor implants

NASA Astrophysics Data System (ADS)

Singh, M.; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Luhman, D. R.; Bielejec, E.; Lilly, M. P.; Carroll, M. S.

2016-02-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Demonstration and Analysis of Materials Processing by Ablation Plasma Ion Implantation (APII)

NASA Astrophysics Data System (ADS)

Qi, B.; Gilgenbach, R. M.; Lau, Y. Y.; Jones, M. C.; Lian, J.; Wang, L. M.; Doll, G. L.; Lazarides, A.

2001-10-01

Experiments have demonstrated laser-ablated Fe ion implantation into Si substrates. Baseline laser deposited films (0 kV) showed an amorphous Fe-Si film overlying the Si substrate with a top layer of nanocrystalline Fe. APII films exhibited an additional Fe ion-induced damage layer, extending 7.6 nm below the Si surface. The overlying Fe-Si layer and Fe top layer were amorphized by fast ions. Results were confirmed by XPS vs Ar ion etching time for depth profile of the deposited films. XPS showed primarily Fe (top layer), transitioning to roughly equal Fe/Si , then mostly Si with lower Fe (implanted region). These data clearly prove Fe ion implantation into Si, verifying the feasibility of APII as an ion acceleration and implantation process [1]. SRIM simulations predict about 20 percent deeper Fe ion penetration than data, due to:(a) Subsequent ions must pass through the Fe film deposited by earlier ions, and (b) the bias voltage has a slow rise and fall time. Theoretical research has developed the scaling laws for APII [2]. Recently, a model has successfully explained the shortening of the decay time in the high voltage pulse with the laser ablation plasma. This reduces the theoretical RC time constant, which agrees with the experimental data. * Research supported by National Science Foundation Grant CTS-9907106 [1] Appl. Phys. Lett. 78, 3785 (2001) [2] Appl. Phys. Lett. 78, 706 (2001)),

Mutation-Screening of Pleurotus Ferulae with High Temperature Tolerance by Nitrogen Ion Implantation

NASA Astrophysics Data System (ADS)

Chen, Henglei; Wan, Honggui; Zhang, Jun; Zeng, Xianxian

2008-08-01

In order to obtain Pleurotus ferulae with high temperature tolerance, conidiophores of wild type strain ACK were implanted with nitrogen ions in energy of 5 ~15 keV and dose of 1.5 × 1015 ~ 1.5 × 1016 cm-2, and a mutant CGMCC1763 was isolated subsequently through thermotolerant screening method. It was found that during riper period the surface layer mycelium of the mutant in mushroom bag wasn't aging neither grew tegument even above 30° C. The mycelium endurable temperature of the mutant was increased by 5°C compared to that of the wild type strain. The fruiting bodies growth temperature of the mutant was 18 ~22°C in daytime and 8~14°C at night. The highest growth temperature of fruiting bodies of the mutant was increased about 7°C w.r.t. that of original strain. Through three generations investigations, it was found that the mutant CGMCC1763 was stable with high temperature tolerance.

Assessment of the correlation between insertion torque and resonance frequency analysis of implants placed in bone tissue of different densities.

PubMed

Filho, Luiz Carlos Magno; Cirano, Fabiano Ribeiro; Hayashi, Fernando; Feng, Hsu Shao; Conte, Alexandre; Dib, Luciano Lauria; Casati, Marcio Zaffalon

2014-06-01

The primary stability of dental implants is fundamental for osseointegration. Therefore, this study aimed to assess the correlation between insertion torque (IT) and resonance frequency analysis (RFA) of implants placed in mandibles and maxillas of different bone densities. Eighty dental implants were placed in maxillas and mandibles, and IT and the implant stability quotient (ISQ) were measured at the time of implant insertion. Bone density was assessed subjectively by the Lekholm and Zarb index. The type I and II densities were grouped together (group A)as were the type III and IV densities (group B). The IT in group A was higher (Student t test, P = .0013) than in group B (46.27 ± 18.51 Ncm, 33.62 ± 14.74 Ncm, respectively). The implants placed in group A showed higher ISQ (Student t test, P = .0004) than those placed in group B (70.09 ± 7.50, 63.66 ± 8.00, respectively). A significant correlation between IT and the ISQ value was observed for group A (Pearson correlation test; r = 0.35; P = .0213) and for group B (r = 0.37; P = .0224). Within the limitations of this study, it was possible to conclude that there is a correlation between IT and RFA of implants placed in mandibles and maxillas of different bone densities.

The effect of platform switching on the levels of metal ion release from different implant–abutment couples

PubMed Central

Alrabeah, Ghada O; Knowles, Jonathan C; Petridis, Haralampos

2016-01-01

The improved peri-implant bone response demonstrated by platform switching may be the result of reduced amounts of metal ions released to the surrounding tissues. The aim of this study was to compare the levels of metal ions released from platform-matched and platform-switched implant–abutment couples as a result of accelerated corrosion. Thirty-six titanium alloy (Ti-6Al-4V) and cobalt–chrome alloy abutments were coupled with titanium cylinders forming either platform-switched or platform-matched groups (n=6). In addition, 18 unconnected samples served as controls. The specimens were subjected to accelerated corrosion by static immersion in 1% lactic acid for 1 week. The amount of metal ions ion of each test tube was measured using inductively coupled plasma mass spectrometry. Scanning electron microscope (SEM) images and energy dispersive spectroscopy X-ray analyses were performed pre- and post-immersion to assess corrosion at the interface. The platform-matched groups demonstrated higher ion release for vanadium, aluminium, cobalt, chrome, and molybdenum compared with the platform-switched groups (P<0.05). Titanium was the highest element to be released regardless of abutment size or connection (P<0.05). SEM images showed pitting corrosion prominent on the outer borders of the implant and abutment platform surfaces. In conclusion, implant–abutment couples underwent an active corrosion process resulting in metal ions release into the surrounding environment. The highest amount of metal ions released was recorded for the platform-matched groups, suggesting that platform-switching concept has a positive effect in reducing the levels of metal ion release from the implant–abutment couples. PMID:27357323

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

NASA Astrophysics Data System (ADS)

Yang, Changyi; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R. G.

2003-09-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single 31P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO 2 surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 μm) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV 31P ions.

Radiation damage in Tb-implanted CaF 2 observed by channeling and luminescence measurements

NASA Astrophysics Data System (ADS)

Aono, K.; Kumagai, M.; Iwaki, M.; Aoyagi, Y.; Namba, S.

1993-06-01

The effects of 100 keV Tb ion implantation in CaF 2 single crystals have been investigated using Rutherford backscattering/channeling technique and luminescence spectra during ion implantation, depending on ion doses. Terbium ions were implanted into (111)-cut CaF 2 single crystals in random directions with doses ranging from 1 × 10 13 to 1 × 10 17 Tb +/cm 2 at -100°C, 25°C and 100°C. The luminescence signals were measured by 100 keV Ar ion beam irradiation at room temperature to Tb-implanted specimens in order to detect the ionic state of Tb. Two broad emission peaks (near 380 and 545 nm) in visible regions were observed, originating from Tb 3+ in CaF 2. The same luminescence was also observed even during Tb implantation to CaF 2. The luminescence near 380 nm is identified as an emission of 5D 3→ 7F 6 and that near 545 nm is 5D 4→ 7F 5. The emission peak intensities depend on ion dose. Channeling measurements suggest that most of the Tb atoms occupy substitutional lattice sites. Intensities of luminescence and Tb depth profiles depend on the target temperature. In conclusion, implanted Tb atoms occupy Ca lattice sites and emit green luminescence light.

High-dose boron and silver ion implantation into PMMA probed by slow positrons: Effects of carbonization and formation of metal nanoparticles

NASA Astrophysics Data System (ADS)

Kavetskyy, T.; Iida, K.; Nagashima, Y.; Kuczumow, A.; Šauša, O.; Nuzhdin, V.; Valeev, V.; Stepanov, A. L.

2017-01-01

The Doppler broadening slow positron beam spectroscopy (SPBS) data for the previously observed effect of carbonization in high-dose (>1016 ion/cm2) 40 keV boron-ion-implanted polymethylmethacrylate (B:PMMA) and another one obtained for the effect of formation of metal nanoparticles in high-dose 30 keV silver-ion-implanted polymer (Ag:PMMA) are compared. Following to the Doppler broadening SPBS results, a difference in the high-dose ion-irradiation-induced processes in B:PMMA and Ag:PMMA is detected.

Effects of pore size, implantation time and nano-surface properties on rat skin ingrowth into percutaneous porous titanium implants

PubMed Central

Farrell, Brad J.; Prilutsky, Boris I.; Ritter, Jana M.; Kelley, Sean; Popat, Ketul; Pitkin, Mark

2013-01-01

The main problem of percutaneous osseointegrated implants is poor skin-implant integration, which may cause infection. This study investigated the effects of pore size (Small, 40–100 microns and Large, 100–160 microns), nanotubular surface treatment (Nano), and duration of implantation (3 and 6 weeks) on skin ingrowth into porous titanium. Each implant type was percutaneously inserted in the back of 35 rats randomly assigned to 7 groups. Implant extrusion rate was measured weekly and skin ingrowth into implants was determined histologically after harvesting implants. It was found that all 3 types of implants demonstrated skin tissue ingrowth of over 30% (at week 3) and 50% (at weeks 4–6) of total implant porous area under the skin; longer implantation resulted in greater skin ingrowth (p<0.05). Only one case of infection was observed (infection rate 2.9%). Small and Nano groups showed the same implant extrusion rate which was lower than the Large group rate (0.06±0.01 vs. 0.16 ± 0.02 cm/week; p<0.05). Ingrowth area was comparable in the Small, Large and Nano implants. However, qualitatively, the Nano implants showed greatest cellular inhabitation within first three weeks. We concluded that percutaneous porous titanium implants allow for skin integration with the potential for a safe seal. PMID:23703928

Phase composition and in vitro bioactivity of porous implants made of bioactive glass S53P4.

PubMed

Fagerlund, S; Massera, J; Moritz, N; Hupa, L; Hupa, M

2012-07-01

This work studied the influence of sintering temperature on the phase composition, compression strength and in vitro properties of implants made of bioactive glass S53P4. The implants were sintered within the temperature range 600-1000°C. Over the whole temperature range studied, consolidation took place mainly via viscous flow sintering, even though there was partial surface crystallization. The mechanical strength of the implants was low but increased with the sintering temperature, from 0.7 MPa at 635°C to 10 MPa at 1000°C. Changes in the composition of simulated body fluid (SBF), the immersion solution, were evaluated by pH measurements and ion analysis using inductively coupled plasma optical emission spectrometry. The development of a calcium phosphate layer on the implant surfaces was verified using scanning electron microscopy-electron-dispersive X-ray analysis. When immersed in SBF, a calcium phosphate layer formed on all the samples, but the structure of this layer was affected by the surface crystalline phases. Hydroxyapatite formed more readily on amorphous and partially crystalline implants containing both primary Na(2)O·CaO·2SiO(2) and secondary Na(2)Ca(4)(PO(4))(2)SiO(4) crystals than on implants containing only primary crystals. Copyright © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

The effects on γ-LiAlO2 induced by nuclear energy losses during Ga ions implantation

NASA Astrophysics Data System (ADS)

Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Yu, Xiao-Fei; Wang, Tie-Jun; Wang, Xue-Lin

2017-09-01

To explore the evolution of γ-LiAlO2 under ion irradiation at low energy, we implanted Ga ions of 30, 80 and 150 keV at fluences of 1 × 1014 and 1 × 1015 ions/cm2 in z-cut γ-LiAlO2 samples, respectively. The implantation resulted in damage regions dominated by nuclear energy losses at depth of 232 Å, 514 Å, and 911 Å beneath the surface, respectively, which was simulated by the Stopping and Range of Ions in Matter program. The irradiated γ-LiAlO2 were characterized with atomic force microscope, Raman spectroscopy, X-ray diffraction and Rutherford backscattering in a channeling mode for morphology evolution, structure information and damage profiles. The interesting and partly abnormal results showed the various behaviors in modification of surface by Ga ions implantation.

Evaluation of effect of galvanic corrosion between nickel-chromium metal and titanium on ion release and cell toxicity

PubMed Central

Choi, Jung-Yun

2015-01-01

PURPOSE The purpose of this study was to evaluate cell toxicity due to ion release caused by galvanic corrosion as a result of contact between base metal and titanium. MATERIALS AND METHODS It was hypothesized that Nickel (Ni)-Chromium (Cr) alloys with different compositions possess different corrosion resistances when contacted with titanium abutment, and therefore in this study, specimens (10×10×1.5 mm) were fabricated using commercial pure titanium and 3 different types of Ni-Cr alloys (T3, Tilite, Bella bond plus) commonly used for metal ceramic restorations. The specimens were divided into 6 groups according to the composition of Ni-Cr alloy and contact with titanium. The experimental groups were in direct contact with titanium and the control groups were not. After the samples were immersed in the culture medium - Dulbecco's modified Eagle's medium[DMEM] for 48 hours, the released metal ions were detected using inductively coupled plasma mass spectrometer (ICP-MS) and analyzed by the Kruskal-Wallis and Mann-Whitney test (P<.05). Mouse L-929 fibroblast cells were used for cell toxicity evaluation. The cell toxicity of specimens was measured by the 3-{4,5-dimethylthiazol-2yl}-2,5-diphenyltetrazolium bromide (MTT) test. Results of MTT assay were statistically analyzed by the two-way ANOVA test (P<.05). Post-hoc multiple comparisons were conducted using Tukey's tests. RESULTS The amount of metal ions released by galvanic corrosion due to contact between the base metal alloy and titanium was increased in all of the specimens. In the cytotoxicity test, the two-way ANOVA showed a significant effect of the alloy type and galvanic corrosion for cytotoxicity (P<.001). The relative cell growth rate (RGR) was decreased further on the groups in contact with titanium (P<.05). CONCLUSION The release of metal ions was increased by galvanic corrosion due to contact between base metal and titanium, and it can cause adverse effects on the tissue around the implant by inducing cytotoxicity. PMID:25932317

Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy

DOEpatents

Boatner, Lynn A.; Rankin, Janet; Thevenard, Paul; Romana, Laurence J.

1995-01-01

A method for tailoring or patterning the surface of ceramic articles is provided by implanting ions to predetermined depth into the ceramic material at a selected surface location with the ions being implanted at a fluence and energy adequate to damage the lattice structure of the ceramic material for bi-axially straining near-surface regions of the ceramic material to the predetermined depth. The resulting metastable near-surface regions of the ceramic material are then contacted with energy pulses from collapsing, ultrasonically-generated cavitation bubbles in a liquid medium for removing to a selected depth the ion-damaged near-surface regions containing the bi-axially strained lattice structure from the ceramic body. Additional patterning of the selected surface location on the ceramic body is provided by implanting a high fluence of high-energy, relatively-light ions at selected surface sites for relaxing the bi-axial strain in the near-surface regions defined by these sites and thereby preventing the removal of such ion-implanted sites by the energy pulses from the collapsing ultrasonic cavitation bubbles.

Effect of structural transformation of C+-ion implanted PMMA into quasi-continuous carbonaceous layer on its optical and electrical properties

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Sagheer, Riffat

2018-02-01

The samples of Polymethylmethacrylate (PMMA) have been implanted with 500 keV C+-ions at different ion fluences ranging from 9.3 × 1013 to 8.4 × 1014 ions/cm2. The structural modifications are examined by Fourier Transform Infrared and Raman spectral studies. For the investigation of optical, electrical and surface morphological properties of implanted samples UV-Visible spectrometer, four probe apparatus and optical microscope have been employed. The FTIR spectra confirmed the cleavage of chemicals bonds as a consequence of polymer chain scission, whereas, Raman studies revealed the transformation of PMMA structure into quasi-continuous amorphous carbon with increasing ion fluences. A continuous reduction has been observed in the optical band gap of PMMA from 3.16 to 1.42 eV. Moreover, the refractive index, extinction coefficient and electrical conductivity of implanted PMMA are found to be an increasing function of the ion fluence. The micrographic images revealed the signatures of ion-induced defects like cracking, dehydrogenation, stress and swelling on the surface of PMMA. These implanted samples have a potential to be used in the field of optical communications and thin plastic flexible electronics.

Comparison of retention and stability of two implant-retained overdentures based on implant location.

PubMed

Scherer, Michael D; McGlumphy, Edwin A; Seghi, Robert R; Campagni, Wayne V

2014-09-01

The location of dental implants and the choice of retentive attachments for implant-retained overdentures are selected based on clinician preference, expert opinion, or empirical information. Limited information is available regarding implant position and the effect on the retention and stability of 2-implant mandibular implant overdentures. The purpose of this investigation was to evaluate the effect of implant location on the in vitro retention and stability of a simulated 2-implant-supported overdenture and to examine the differences among different attachment systems. A model that simulates a mandibular edentulous ridge with dental implants in positions that approximate tooth positions, and a cobalt-chromium cast framework attached to a universal testing machine was used to measure the peak load (N) required to disconnect the attachments. Four different types of attachments (Ball/Cap, ERA, Locator, and O-Ring) were used in sequence in various positions on the model to evaluate the effect of implant location on the retention and stability of a simulated 2-implant-retained overdenture. Means were calculated, and differences among the systems, directions, and groups were identified by using a repeated measured ANOVA (α=.05). For differences observed between measurements, the Bonferroni post hoc method at the 5% level of significance was used to determine the location and magnitude of difference. The interactions between the attachment system, direction of force, and implant location were statistically significant (P=.01). The vertical retention and horizontal stability of a simulated overdenture prosthesis increased with the distal implant location up to the second premolar, and the anteroposterior stability increased with distal implant location. The attachment type affected retention and stability differently by location. Ball attachments produced the highest levels of retention and stability, followed by Locator (pink), O-Ring, and ERA (orange). The retention and stability of a 2-implant simulated overdenture prosthesis is significantly affected by implant location (P=.01) and abutment type (P=.01). Copyright © 2014 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

NASA Astrophysics Data System (ADS)

Mändl, S.; Rauschenbach, B.

2003-08-01

Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 °C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry).

Structural and optical properties of DC magnetron sputtered ZnO films on glass substrate and their modification by Ag ions implantation

NASA Astrophysics Data System (ADS)

Ahmad, R.; Afzal, Naveed; Amjad, U.; Jabbar, S.; Hussain, T.; Hussnain, A.

2017-07-01

This work is focused on investigating the effects of deposition time and Ag ions implantation on structural and optical properties of ZnO film. The ZnO film was prepared on glass substrate by pulsed DC magnetron sputtering of pure Zn target in reactive oxygen environment for 2 h, 3 h, 4 h and 5 h respectively. X-ray diffraction results revealed polycrystalline ZnO film whose crystallinity was improved with increase of the deposition time. The morphological features indicated agglomeration of smaller grains into larger ones by increasing the deposition time. The UV-vis spectroscopy analysis depicted a small decrease in the band gap of ZnO from 3.36 eV to 3.27 eV with increase of deposition time. The Ag ions implantation in ZnO films deposited for 5 h on glass was carried out by using Pelletron Accelerator at different ions fluences ranging from 1  ×  1011 ions cm-2 to 2  ×  1012 ions cm-2. XRD patterns of Ag ions implanted ZnO did not show significant change in crystallite size by increasing ions fluence from 1  ×  1011 ions cm-2 to 5  ×  1011 ions cm-2. However, with further increase of the ions fluence, the crystallite size was decreased. The band gap of Ag ions implanted ZnO indicated anomalous variations with increase of the ions fluence.

Improvement of L(+)-Lactic Acid Production of Rhizopus Oryzae by Low-Energy Ions and Analysis of Its Mechanism

NASA Astrophysics Data System (ADS)

Ge, Chunmei; Yang, Yingge; Fan, Yonghong; Li, Wen; Pan, Renrui; Zheng, Zhiming; Yu, Zengliang

2008-02-01

The wild type strain Rhizopus oryzae PW352 was mutated by means of nitrogen ion implantation (15 keV, 7.8 × 1014 ~ 2.08 × 1015 ions/cm2) to find an industrial strain with a higher L(+)-lactic acid yield, and two mutants RE3303 and RF9052 were isolated. In order to discuss the mechanism primarily, Lactate Dehydrogenase of Rhizopus oryzae was studied. While the two mutants produced L(+)-lactic acid by 75% more than the wild strain did, their specific activity of Lactate Dehydrogenase was found to be higher than that in the wild strain. The optimum temperature of Lactate Dehydrogenase in Rhizopus oryzae RF9052 was higher. Compared to the wild strain, the Michaelis constant (Km) value of Lactate Dehydrogenase in the mutants was changed. All these changes show that L(+)-lactic acid production has a correlation with the specific activity of Lactate Dehydrogenase. The low-energy ions, implanted into the strain, may improve the specific activity of Lactate Dehydrogenase by influencing its gene structure and protein structure.

Surface-conductivity enhancement of PMMA by keV-energy metal-ion implantation

NASA Astrophysics Data System (ADS)

Bannister, M. E.; Hijazi, H.; Meyer, H. M.; Cianciolo, V.; Meyer, F. W.

2014-11-01

An experiment has been proposed to measure the neutron electric dipole moment (nEDM) with high precision at the Oak Ridge National Laboratory (ORNL) Spallation Neutron Source. One of the requirements of this experiment is the development of PMMA (Lucite) material with a sufficiently conductive surface to permit its use as a high-voltage electrode while immersed in liquid He. At the ORNL Multicharged Ion Research Facility, an R&D activity is under way to achieve suitable surface conductivity in poly-methyl methacrylate (PMMA) using metal ion implantation. The metal implantation is performed using an electron-cyclotron-resonance (ECR) ion source and a recently developed beam line deceleration module that is capable of providing high flux beams for implantation at energies as low as a few tens of eV. The latter is essential for reaching implantation fluences exceeding 1 × 1016 cm-2, where typical percolation thresholds in polymers have been reported. In this contribution, we report results on initial implantation of Lucite by Ti and W beams with keV energies to average fluences in the range 0.5-6.2 × 1016 cm-2. Initial measurements of surface-resistivity changes are reported as function of implantation fluence, energy, and sample temperature. We also report X-ray photoelectron spectroscopy (XPS) surface and depth profiling measurements of the ion implanted samples, to identify possible correlations between the near surface and depth resolved implanted W concentrations and the measured surface resistivities.

Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges

NASA Astrophysics Data System (ADS)

Friedland, E.

2017-01-01

At ion energies with inelastic stopping powers less than a few keV/nm, radiation damage is thought to be due to atomic displacements by elastic collisions only. However, it is well known that inelastic processes and non-linear effects due to defect interaction within collision cascades can significantly increase or decrease damage efficiencies. The importance of these processes changes significantly along the ion trajectory and becomes negligible at some distance beyond the projected range, where damage is mainly caused by slowly moving secondary recoils. Hence, in this region amorphization energies should become independent of the ion type and only reflect the properties of the target lattice. To investigate this, damage profiles were obtained from α-particle channeling spectra of 6H-SiC wafers implanted at room temperature with ions in the mass range 84 ⩽ M ⩽ 133, employing the computer code DICADA. An average amorphization dose of (0.7 ± 0.2) dpa and critical damage energy of (17 ± 6) eV/atom are obtained from TRIM simulations at the experimentally observed boundary positions of the amorphous zones.

Synthesis of sponge-like hydrophobic NiBi3 surface by 200 keV Ar ion implantation

NASA Astrophysics Data System (ADS)

Siva, Vantari; Datta, D. P.; Chatterjee, S.; Varma, S.; Kanjilal, D.; Sahoo, Pratap K.

2017-07-01

Sponge-like nanostructures develop under Ar-ion implantation of a Ni-Bi bilayer with increasing ion fluence at room temperature. The surface morphology features different stages of evolution as a function of ion fluence, finally resulting in a planar surface at the highest fluence. Our investigations on the chemical composition reveal a spontaneous formation of NiBi3 phase on the surface of the as deposited bilayer film. Interestingly, we observe a competition between crystallization and amorphization of the existing poly-crystalline phases as a function of the implanted fluence. Measurements of contact angle by sessile drop method clearly show the ion-fluence dependent hydrophobic nature of the nano-structured surfaces. The wettability has been correlated with the variation in roughness and composition of the implanted surface. In fact, our experimental results confirm dominant effect of ion-sputtering as well as ion-induced mixing at the bilayer interface in the evolution of the sponge-like surface.

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir

2015-05-07

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of themore » III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.« less

The effect of fluoride ions on the corrosion behaviour of Ti metal, and Ti6-Al-7Nb and Ti-6Al-4V alloys in artificial saliva.

PubMed

Milošev, Ingrid; Kapun, Barbara; Selih, Vid Simon

2013-01-01

Metallic materials used for manufacture of dental implants have to exhibit high corrosion resistance in order to prevent metal release from a dental implant. Oral cavity is aggressive towards metals as it represents a multivariate environment with wide range of conditions including broad range of temperatures, pH, presence of bacteria and effect of abrasion. An increasing use of various Ti-based materials for dental implants and orthodontic brackets poses the question of their corrosion resistance in the presence of fluoride ions which are present in toothpaste and mouth rinse. Corrosion behaviour of Ti metal, Ti-6Al-7Nb and Ti-6Al-4V alloys and constituent metals investigated in artificial saliva is significantly affected by the presence of fluoride ions (added as NaF), as proven by electrochemical methods. Immersion test was performed for 32 days. During that time the metal dissolution was measured by inductively coupled plasma mass spectrometry. At the end of the test the composition, thickness and morphology of the surface layers formed were investigated by X-ray photoelectron spectroscopy and scanning electron microscopy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slabodchikov, Vladimir A., E-mail: dipis1991@mail.ru; Borisov, Dmitry P., E-mail: borengin@mail.ru; Kuznetsov, Vladimir M., E-mail: kuznetsov@rec.tsu.ru

The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate.more » The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.« less

Preshock region acceleration of implanted cometary H(+) and O(+)

NASA Astrophysics Data System (ADS)

Gombosi, T. I.

1988-01-01

A self-consistent, three-fluid model of plasma transport and implanted ion acceleration in the unshocked solar wind is presented. The solar wind plasma is depleted by charge exchange with the expanding cometary exosphere, while implanted protons and heavy ions are produced by photoionization and charge transfer and lost by charge exchange. A generalized transport equation describing convection, adiabatic and diffusive velocity change, and the appropriate production terms is used to describe the evolution of the two cometary ion components, while the moments of the Boltzmann equation are used to calculate the solar wind density and pressure. The flow velocity is obtained self-consistently by combining the conservation equations of the three ion species. The results imply that second-order Fermi acceleration can explain the implanted spectra observed in the unshocked solar wind. Comparison of measured and calculated distribution indicates that spatial diffusion of implanted ions probably plays an important role in forming the energetic particle environment in the shock vicinity.

Laser characterization of the depth profile of complex refractive index of PMMA implanted with 50 keV silicon ions

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Stoyanov, Hristiyan Y.; Petrova, Elitza; Russev, Stoyan C.; Tsutsumanova, Gichka G.; Hadjichristov, Georgi B.

2013-03-01

The depth profile of the complex refractive index of silicon ion (Si+) implanted polymethylmethacrylate (PMMA) is studied, in particular PMMA implanted with Si+ ions accelerated to a relatively low energy of 50 keV and at a fluence of 3.2 × 1015 cm-2. The ion-modified material with nano-clustered structure formed in the near(sub)surface layer of a thickness of about 100 nm is optically characterized by simulation based on reflection ellipsometry measurements at a wavelength of 632.8 nm (He-Ne laser). Being of importance for applications of ion-implanted PMMA in integrated optics, optoelectronics and optical communications, the effect of the index depth profile of Si+-implanted PMMA on the profile of the reflected laser beam due to laser-induced thermo-lensing in reflection is also analyzed upon illumination with a low power cw laser (wavelength 532 nm, optical power 10 - 50 mW).

Ferroelectric Properties of Mn-implanted CdTe

NASA Astrophysics Data System (ADS)

Fu, D. J.; Lee, J. C.; Lee, W. C.; Choi, S. W.; Lee, S. J.; Kang, T. W.

2005-06-01

We report a study of ferroelectricity in CdTe:Mn, which were prepared by implantation of CdTe wafers with 200-keV Mn ions to a dose of 5×1016 cm-2 and subsequently treated by rapid thermal annealing. An insulating layer was created by the implantation in the surface region of the samples. Ferroelectric characterization of the implanted sample revealed a clear hysteresis in its polarization-voltage curves. The remnant polarization of CdTe:Mn amounts to 0.64 μC/cm2 at 400 Hz. The polarization decreases with increasing temperature in a continuous and diffusive manner. Capacitance measurement demonstrated a maximum capacitance at 140°C, and fitting of the data with Curie-Weiss law shows the occurrence of a second-order type phase transition.

Porcelain-coated antenna for radio-frequency driven plasma source

DOEpatents

Leung, Ka-Ngo; Wells, Russell P.; Craven, Glen E.

1996-01-01

A new porcelain-enamel coated antenna creates a clean plasma for volume or surface-conversion ion sources. The porcelain-enamel coating is hard, electrically insulating, long lasting, non fragile, and resistant to puncture by high energy ions in the plasma. Plasma and ion production using the porcelain enamel coated antenna is uncontaminated with filament or extraneous metal ion because the porcelain does not evaporate and is not sputtered into the plasma during operation. Ion beams produced using the new porcelain-enamel coated antenna are useful in ion implantation, high energy accelerators, negative, positive, or neutral beam applications, fusion, and treatment of chemical or radioactive waste for disposal. For ion implantation, the appropriate species ion beam generated with the inventive antenna will penetrate large or small, irregularly shaped conducting objects with a narrow implantation profile.

LiNi(0.5)Mn(1.5)O4 porous nanorods as high-rate and long-life cathodes for Li-ion batteries.

PubMed

Zhang, Xiaolong; Cheng, Fangyi; Yang, Jingang; Chen, Jun

2013-06-12

Spinel-type LiNi0.5Mn1.5O4 porous nanorods assembled with nanoparticles have been prepared and investigated as high-rate and long-life cathode materials for rechargeable lithium-ion batteries. One-dimensional porous nanostructures of LiNi0.5Mn1.5O4 with ordered P4332 phase were obtained through solid-state Li and Ni implantation of porous Mn2O3 nanorods that resulted from thermal decomposition of the chain-like MnC2O4 precursor. The fabricated LiNi0.5Mn1.5O4 delivered specific capacities of 140 and 109 mAh g(-1) at 1 and 20 C rates, respectively. At a 5 C cycling rate, a capacity retention of 91% was sustained after 500 cycles, with extremely low capacity fade (<1%) during the initial 300 cycles. The remarkable performance was attributed to the porous 1D nanostructures that can accommodate strain relaxation by slippage at the subunits wall boundaries and provide short Li-ion diffusion distance along the confined dimension.

Bone attachment to glass-fibre-reinforced composite implant with porous surface.

PubMed

Mattila, R H; Laurila, P; Rekola, J; Gunn, J; Lassila, L V J; Mäntylä, T; Aho, A J; Vallittu, P K

2009-06-01

A method has recently been developed for producing fibre-reinforced composites (FRC) with porous surfaces, intended for use as load-bearing orthopaedic implants. This study focuses on evaluation of the bone-bonding behaviour of FRC implants. Three types of cylindrical implants, i.e. FRC implants with a porous surface, solid polymethyl methacrylate (PMMA) implants and titanium (Ti) implants, were inserted in a transverse direction into the intercondular trabeculous bone area of distal femurs and proximal tibias of New Zealand White rabbits. Animals were sacrificed at 3, 6 and 12 weeks post operation, and push-out tests (n=5-6 per implant type per time point) were then carried out. At 12 weeks the shear force at the porous FRC-bone interface was significantly higher (283.3+/-55.3N) than the shear force at interfaces of solid PMMA/bone (14.4+/-11.0 N; p<0.001) and Ti/bone (130.6+/-22.2N; p=0.001). Histological observation revealed new bone growth into the porous surface structure of FRC implants. Solid PMMA and Ti implants were encapsulated mostly with fibrous connective tissue. Finite element analysis (FEA) revealed that porous FRC implants had mechanical properties which could be tailored to smooth the shear stress distribution at the bone-implant interface and reduce the stress-shielding effect.

Growth of rutile TiO2 nanorods in Ti and Cu ion sequentially implanted SiO2 and the involved mechanisms

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Liu, Xiaoyu; Wang, Xiaohu; Dai, Haitao; Liu, Changlong

2018-01-01

TiO2 in nanoscale exhibits unique physicochemical and optoelectronic properties and has attracted much more interest of the researchers. In this work, TiO2 nanostructures are synthesized in amorphous SiO2 slices by implanting Ti ions, or sequentially implanting Ti and Cu ions combined with annealing at high temperature. The morphology, structure, spatial distribution and optical properties of the formed nanostructures have been investigated in detail. Our results clearly show that the thermal growth of TiO2 nanostructures in SiO2 substrate is significantly enhanced by presence of post Cu ion implantation, which depends strongly on the applied Cu ion fluence, as well as the annealing atmosphere. Due to the formation of Cu2O in the substrate, rutile TiO2 nanorods of large size have been well fabricated in the Ti and Cu sequentially implanted SiO2 after annealing in N2 atmosphere, in which Cu2O plays a role as a catalyst. Moreover, the sample with well-fabricated TiO2 nanorods exhibits a narrowed band gap, an enhanced optical absorption in visible region, and catalase-/peroxidase-like catalytic characteristics. Our findings provide an effective route to fabricate functional TiO2 nanorods in SiO2 via ion implantation.

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

PubMed Central

Prucnal, Slawomir; Liu, Fang; Voelskow, Matthias; Vines, Lasse; Rebohle, Lars; Lang, Denny; Berencén, Yonder; Andric, Stefan; Boettger, Roman; Helm, Manfred; Zhou, Shengqiang; Skorupa, Wolfgang

2016-01-01

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range. PMID:27282547

Polarization induced doped transistor

DOEpatents

Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

2016-06-07

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

Method for making defect-free zone by laser-annealing of doped silicon

DOEpatents

Narayan, Jagdish; White, Clark W.; Young, Rosa T.

1980-01-01

This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

Influence of controlled immediate loading and implant design on peri-implant bone formation.

PubMed

Vandamme, Katleen; Naert, Ignace; Geris, Liesbet; Vander Sloten, Jozef; Puers, Robert; Duyck, Joke

2007-02-01

Tissue formation at the implant interface is known to be sensitive to mechanical stimuli. The aim of the study was to compare the bone formation around immediately loaded versus unloaded implants in two different implant macro-designs. A repeated sampling bone chamber with a central implant was installed in the tibia of 10 rabbits. Highly controlled loading experiments were designed for a cylindrical (CL) and screw-shaped (SL) implant, while the unloaded screw-shaped (SU) implant served as a control. An F-statistic model with alpha=5% determined statistical significance. A significantly higher bone area fraction was observed for SL compared with SU (p<0.0001). The mineralized bone fraction was the highest for SL and significantly different from SU (p<0.0001). The chance that osteoid- and bone-to-implant contact occurred was the highest for SL and significantly different from SU (p<0.0001), but not from CL. When bone-to-implant contact was observed, a loading (SL versus SU: p=0.0049) as well as an implant geometry effect (SL versus CL: p=0.01) was found, in favour of the SL condition. Well-controlled immediate implant loading accelerates tissue mineralization at the interface. Adequate bone stimulation via mechanical coupling may account for the larger bone response around the screw-type implant compared with the cylindrical implant.

No influence of simultaneous bone-substitute application on the success of immediately loaded dental implants: a retrospective cohort study.

PubMed

Kopp, Sigmar; Behrend, Detlef; Kundt, Günther; Ottl, Peter; Frerich, Bernhard; Warkentin, Mareike

2013-06-01

To examine the influence of bone-substitute application during implantation on the success of immediately placed and loaded dental implants. A total of 147 consecutive patients (age, 16.5-80.4 years) were provided with 696 immediately loaded implants. The mean follow-up time was 34.1 months. Of these implants, 50.4% (n=351) were immediately placed into extraction sockets. A total of 119 implants were added by simultaneous bone-substitute application (NanoBone, Artoss GmbH, Rostock Germany), whereas the other implants were placed in healed bone. Univariate and multivariate analysis was performed using IBM SPSS V.20. The overall implant success rate was 96.1%. Implants with simultaneous bone replacement had a hazard ratio of 0.877 (p=0.837); 95% CI, 0.253-3.04). Factors found to be statistically significant modifiers of success on multivariate analysis (p<0.05) included type of superstructure (p<0.001), implant-abutment connection (p<0.001), membrane use (p=0.010), and jaw (p=0.026). None of the other factors investigated were significant modifiers. The present study demonstrates high success rates for immediately loaded implants and their superstructures independent of the simultaneous application of bone substitute. The declared aim of socket preservation, the prevention avoiding bone loss, is achieved in the immediate implant placement scenario under immediate-loading conditions.

Ion penetration depth in the plant cell wall

NASA Astrophysics Data System (ADS)

Yu, L. D.; Vilaithong, T.; Phanchaisri, B.; Apavatjrut, P.; Anuntalabhochai, S.; Evans, P.; Brown, I. G.

2003-05-01

This study investigates the depth of ion penetration in plant cell wall material. Based on the biological structure of the plant cell wall, a physical model is proposed which assumes that the wall is composed of randomly orientated layers of cylindrical microfibrils made from cellulose molecules of C 6H 12O 6. With this model, we have determined numerical factors for ion implantation in the plant cell wall to correct values calculated from conventional ion implantation programs. Using these correction factors, it is possible to apply common ion implantation programs to estimate the ion penetration depth in the cell for bioengineering purposes. These estimates are compared with measured data from experiments and good agreement is achieved.

Optical and Structural Properties of Ion-implanted InGaZnO Thin Films Studied with Spectroscopic Ellipsometry and Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Park, Jun Woo; Jeong, Pil Seong; Choi, Suk-Ho; Lee, Hosun; Kong, Bo Hyun; Koun Cho, Hyung

2009-11-01

Amorphous InGaZnO (IGZO) thin films were grown using RF sputtering deposition at room temperature and their corresponding dielectric functions were measured. In order to reduce defects and increase carrier concentrations, we examined the effect of forming gas annealing and ion implantation. The band gap energy increased with increasing forming gas annealing temperature. We implanted the IGZO thin films with F- ions in order to decrease oxygen vacancies. For comparison, we also implanted InO- ions. Transmission electron microscopy showed that the amorphous phase undergoes transformation to a nanocrystalline phase due to annealing. We also observed InGaZnO4 nanocrystals having an In-(Ga/Zn) superlattice structure. As the annealing temperature increased, the optical gap energy increased due to crystallization. After annealing, we observed an oxygen-vacancy-related 1.9 eV peak for both unimplanted and InO-implanted samples. However, F- ion implantation substantially reduced the amplitude of the 1.9 eV peak, which disappeared completely at a F fluence of 5×1015 cm-2. We observed other defect-related peaks at 3.6 and 4.2 eV after annealing, which also disappeared after F implantation.

Ion implanted dielectric elastomer circuits

NASA Astrophysics Data System (ADS)

O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

2013-06-01

Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

NASA Technical Reports Server (NTRS)

Spitzer, M. B.

1983-01-01

For the ion implantation tooling was fabricated with which to hold dendritic web samples. This tooling permits the expeditious boron implantation of the back to form the back surface field (BSF). Baseline BSF web cells were fabricated.

RTV silicone rubber surface modification for cell biocompatibility by negative-ion implantation

NASA Astrophysics Data System (ADS)

Zheng, Chenlong; Wang, Guangfu; Chu, Yingjie; Xu, Ya; Qiu, Menglin; Xu, Mi

2016-03-01

A negative cluster ion implantation system was built on the injector of a GIC4117 tandem accelerator. Next, the system was used to study the surface modification of room temperature vulcanization silicone rubber (RTV SR) for cell biocompatibility. The water contact angle was observed to decrease from 117.6° to 99.3° as the C1- implantation dose was increased to 1 × 1016 ions/cm2, and the effects of C1-, C2- and O1- implantation result in only small differences in the water contact angle at 3 × 1015 ions/cm2. These findings indicate that the hydrophilicity of RTV SR improves as the dose is increased and that the radiation effect has a greater influence than the doping effect on the hydrophilicity. There are two factors influence hydrophilicity of RTV: (1) based on the XPS and ATR-FTIR results, it can be inferred that ion implantation breaks the hydrophobic functional groups (Sisbnd CH3, Sisbnd Osbnd Si, Csbnd H) of RTV SR and generates hydrophilic functional groups (sbnd COOH, sbnd OH, Sisbnd (O)x (x = 3,4)). (2) SEM reveals that the implanted surface of RTV SR appears the micro roughness such as cracks and wrinkles. The hydrophilicity should be reduced due to the lotus effect (Zhou Rui et al., 2009). These two factors cancel each other out and make the C-implantation sample becomes more hydrophilic in general terms. Finally, cell culture demonstrates that negative ion-implantation is an effective method to improve the cell biocompatibility of RTV SR.

Outcomes of implants and restorations placed in general dental practices: a retrospective study by the Practitioners Engaged in Applied Research and Learning (PEARL) Network.

PubMed

Da Silva, John D; Kazimiroff, Julie; Papas, Athena; Curro, Frederick A; Thompson, Van P; Vena, Donald A; Wu, Hongyu; Collie, Damon; Craig, Ronald G

2014-07-01

The authors conducted a study to determine the types, outcomes, risk factors and esthetic assessment of implants and their restorations placed in the general practices of a practice-based research network. All patients who visited network practices three to five years previously and underwent placement of an implant and restoration within the practice were invited to enroll. Practitioner-investigators (P-Is) recorded the status of the implant and restoration, characteristics of the implant site and restoration, presence of peri-implant pathology and an esthetic assessment by the P-I and patient. The P-Is classified implants as failures if the original implant was missing or had been replaced, the implant was mobile or elicited pain on percussion, there was overt clinical or radiographic evidence of pathology or excessive bone loss (> 0.2 millimeter per year after an initial bone loss of 2 mm). They classified restorations as failures if they had been replaced or if there was abutment or restoration fracture. The authors enrolled 922 implants and patients from 87 practices, with a mean (standard deviation) follow-up of 4.2 (0.6) years. Of the 920 implants for which complete data records were available, 64 (7.0 percent) were classified as failures when excessive bone loss was excluded from the analysis. When excessive bone loss was included, 172 implants (18.7 percent) were classified as failures. According to the results of univariate analysis, a history of severe periodontitis, sites with preexisting inflammation or type IV bone, cases of immediate implant placement and placement in the incisor or canine region were associated with implant failure. According to the results of multivariate analysis, sites with preexisting inflammation (odds ratio [OR] = 2.17; 95 percent confidence interval [CI], 1.41-3.34]) or type IV bone (OR = 1.99; 95 percent CI, 1.12-3.55) were associated with a greater risk of implant failure. Of the 908 surviving implants, 20 (2.2 percent) had restorations replaced or judged as needing to be replaced. The majority of P-Is and patients were satisfied with the esthetic outcomes for both the implant and restoration. These results suggest that implant survival and success rates in general dental practices may be lower than those reported in studies conducted in academic or specialty settings. The results of this study, generated in the private general practice setting, add to the evidence base to facilitate implant treatment planning.

Surface insulating properties of titanium implanted alumina ceramics by plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Zhu, Mingdong; Song, Falun; Li, Fei; Jin, Xiao; Wang, Xiaofeng; Wang, Langping

2017-09-01

The insulating property of the alumina ceramic in vacuum under high voltage is mainly limited by its surface properties. Plasma immersion ion implantation (PIII) is an effective method to modify the surface chemical and physical properties of the alumina ceramic. In order to improve the surface flashover voltage of the alumina ceramic in vacuum, titanium ions with an energy of about 20 keV were implanted into the surface of the alumina ceramic using the PIII method. The surface properties of the as-implanted samples, such as the chemical states of the titanium, morphology and surface resistivity, were characterized by X-ray photoelectron spectroscopy, scanning electron microscope and electrometer, respectively. The surface flashover voltages of the as-implanted alumina samples were measured by a vacuum surface flashover experimental system. The XPS spectra revealed that a compound of Ti, TiO2 and Al2O3 was formed in the inner surface of the alumina sample. The electrometer results showed that the surface resistivity of the implanted alumina decreased with increased implantation time. In addition, after the titanium ion implantation, the maximum hold-off voltage of alumina was increased to 38.4 kV, which was 21.5% higher than that of the unimplanted alumina ceramic.

A survey of cardiac implantable electronic device implantation in India: By Indian Society of Electrocardiology and Indian Heart Rhythm Society.

PubMed

Shenthar, Jayaprakash; Bohra, Shomu; Jetley, Vinay; Vora, Amit; Lokhandwala, Yash; Nabar, Ashish; Naik, Ajay; Calambur, Narsimhan; Gupta, S B

2016-01-01

There is limited data regarding the demographics and type of cardiac implantable electronic device (CIED) in India. The aim of this survey was to define trends in CIED implants, which included permanent pacemakers (PM), intracardiac defibrillators (ICD), and cardiac resynchronization therapy pacemakers and defibrillators (CRT-P/D) devices in India. The survey was the initiative of the Indian Society of Electrocardiology and the Indian Heart Rhythm Society. The type of CIED used, their indications, demographic characteristics, clinical status and co-morbidities were collected using a survey form over a period of 1 year. 2117 forms were analysed from 136 centers. PM for bradyarrhythmic indication constituted 80% of the devices implanted with ICD's and CRT-P/D forming approximately 10% each. The most common indication for PM implantation was complete atrio-ventricular block (76%). Single chamber (VVI) pacemakers formed 54% of implants, majority in males (64%). The indication for ICD implantation was almost equal for primary and secondary prevention. A single chamber ICD was most commonly implanted (65%). Coronary artery disease was the etiology in 58.5% of patients with ICD implants. CRT pacemakers were implanted mostly in patients with NYHA III/IV (82%), left ventricular ejection fraction <0.35 (88%) with CRT-P being most commonly used (57%). A large proportion of CIED implants in India are PM for bradyarrhythmic indications, predominantly AV block. ICD's are implanted almost equally for primary and secondary prophylaxis. Most CRT devices are implanted for NYHA Class III. There is a male predominance for implantation of CIED. Copyright © 2015 Cardiological Society of India. Published by Elsevier B.V. All rights reserved.

Synthesis of embedded titanium dioxide nanoparticles by oxygen ion implantation in titanium films

NASA Astrophysics Data System (ADS)

Rukade, Deepti. A.; Desai, C. A.; Kulkarni, Nilesh; Tribedi, L. C.; Bhattacharyya, Varsha

2013-02-01

Thin films of titanium of 100nm thickness are deposited on fused silica substrates. These films are implanted by oxygen ions with implantation energy of 60keV obtained from ECR based highly charged ion accelerator. The implanted films are later annealed in a tube furnace to establish nanophase formation. The post implanted annealed films are characterized by UV-Visible Spectroscopy and Glancing Angle X-ray Diffraction technique (GAXRD). The phase formed and particle size is determined by GAXRD. Nanoparticle formation is confirmed by the UV-VIS spectroscopic analysis that shows quantum size effects in the form of a blue shift in the band-gap energy of titanium-oxide.

Defect study in ZnO related structures—A multi-spectroscopic approach

NASA Astrophysics Data System (ADS)

Ling, C. C.; Cheung, C. K.; Gu, Q. L.; Dai, X. M.; Xu, S. J.; Zhu, C. Y.; Luo, J. M.; Zhu, C. Y.; Tam, K. H.; Djurišić, A. B.; Beling, C. D.; Fung, S.; Lu, L. W.; Brauer, G.; Anwand, W.; Skorupa, W.; Ong, H. C.

2008-10-01

ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/ n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure.

Extended Lindhard-Scharf-Schiott Theory for Ion Implantation Profiles Expressed with Pearson Function

NASA Astrophysics Data System (ADS)

Suzuki, Kunihiro

2009-04-01

Ion implantation profiles are expressed by the Pearson function with first, second, third, and fourth moment parameters of Rp, ΔRp, γ, and β. We derived an analytical model for these profile moments by solving a Lindhard-Scharf-Schiott (LSS) integration equation using perturbation approximation. This analytical model reproduces Monte Carlo data that were well calibrated to reproduce a vast experimental database. The extended LSS theory is vital for instantaneously predicting ion implantation profiles with any combination of incident ions and substrate atoms including their energy dependence.

Method and apparatus for plasma source ion implantation

DOEpatents

Conrad, J.R.

1988-08-16

Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner. 7 figs.

Method and apparatus for plasma source ion implantation

DOEpatents

Conrad, John R.

1988-01-01

Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.

Long-range effect in nitrogen ion-implanted AISI 316L stainless steel

NASA Astrophysics Data System (ADS)

Budzynski, P.

2015-01-01

The effect of nitrogen ion implantation on AISI 316L stainless steel was investigated. The microstructure and composition of an N implanted layer were studied by RBS, GIXRD, SEM, and EDX measurements. Friction and wear tests were also performed. The discrepancy between the measured and calculated stopped ion maximum range does not exceed 0.03 μm. After nitrogen implantation with a fluence of 5 × 1017 ion/cm2, additional phases of expanded austenite were detected. At a 5-fold larger depth than the maximum ion range, improvement in the coefficient of friction and wear was detected. We have shown, for the first time, the long-range effect in tribological investigations. The long-range effect is caused by movement of not only defects along the depth of the sample, as assumed so far, but also nitrogen atoms.

Electrical conduction in 100 keV Kr+ ion implanted poly (ethylene terephthalate)

NASA Astrophysics Data System (ADS)

Goyal, P. K.; Kumar, V.; Gupta, Renu; Mahendia, S.; Anita, Kumar, S.

2012-06-01

Polyethylene terephthalate (PET) samples have been implanted to 100 keV Kr+ ions at the fluences 1×1015-- 1×1016 cm-2. From I-V characteristics, the conduction mechanism was found to be shifted from ohmic to space charge limited conduction (SCLC) after implantation. The surface conductivity of these implanted samples was found to increase with increasing implantation dose. The structural alterations in the Raman spectra of implanted PET samples indicate that such an increase in the conductivity may be attributed to the formation of conjugated double bonded carbonaceous structure in the implanted layer of PET.

Superconducting properties of ion-implanted gold-silicon thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jisrawi, N.M.

The superconducting properties of thin Au{sub x}Si{sub 1{minus}x}, films prepared by ion beam implantation and ion beam mixing are studied. The films are prepared by evaporation of single Au layers on Si substrates and mixing them with Si, Ar, or Xe, or by Xe beam mixing of alternate multilayers of Au and Si sputtered on Al{sub 2}O{sub 3} substrates. The superconducting transition temperature and upper critical fields are determined by measuring the temperature and magnetic field dependence of resistivity. Temperatures as low as 20mK and magnetic fields as high as 8 T were used. Superconductivity in these films is discussedmore » in connection with metastable metallic phases that are reportedly produced in the Au-Si system by high quenching rate preparation techniques like quenching from the vapor or the melt or ion implantation. Preliminary structural studies provide evidence for the existence of these phases and near-edge X-ray absorption and X-ray photoelectron spectroscopy measurements indicate a metallic type of bonding from which compound formation is inferred. The quality of the films is strongly dependent on the conditions of implantation. The maximum superconducting transition temperature attained is about 1.2 K. The upper critical fields have a maximum of 6T. An unusual double transition in the field dependence of resistivity is observed at low temperatures. The effect is very pronounced at compositions near x = 0.5 where the maximum {Tc} occurs. A model is presented to explain this result which invokes the properties of the metastable metallic phases and assumes the formation of more than two such phases in the same sample as the implantation dose increases. The Si-Au interface plays an important role in understanding the model and in interpreting the results of this thesis in general.« less

Studies on the surface modification of TiN coatings using MEVVA ion implantation with selected metallic species

NASA Astrophysics Data System (ADS)

Ward, L. P.; Purushotham, K. P.; Manory, R. R.

2016-02-01

Improvement in the performance of TiN coatings can be achieved using surface modification techniques such as ion implantation. In the present study, physical vapor deposited (PVD) TiN coatings were implanted with Cr, Zr, Nb, Mo and W using the metal evaporation vacuum arc (MEVVA) technique at a constant nominal dose of 4 × 1016 ions cm-2 for all species. The samples were characterized before and after implantation, using Rutherford backscattering (RBS), glancing incident angle X-ray diffraction (GIXRD), atomic force microscopy (AFM) and optical microscopy. Friction and wear studies were performed under dry sliding conditions using a pin-on-disc CSEM Tribometer at 1 N load and 450 m sliding distance. A reduction in the grain size and surface roughness was observed after implantation with all five species. Little variation was observed in the residual stress values for all implanted TiN coatings, except for W implanted TiN which showed a pronounced increase in compressive residual stress. Mo-implanted samples showed a lower coefficient of friction and higher resistance to breakdown during the initial stages of testing than as-received samples. Significant reduction in wear rate was observed after implanting with Zr and Mo ions compared with unimplanted TiN. The presence of the Ti2N phase was observed with Cr implantation.

Large vestibular aqueduct syndrome: Impedance changes over time with different cochlear implant electrode arrays.

PubMed

Powell, Harry R F; Birman, Catherine S

2015-01-01

The aim of this study was to assess if large vestibular aqueduct syndrome (LVAS), with the increase in perilymphatic pressure, affects impedance changes over time with different types of Cochlear(®) implant electrode arrays Contour, Straight, and CI 422. To report speech perception outcomes for these cochlear implant recipients. Retrospective case review of impedance levels and categories of auditory performance. Impedance data were collected at switch on, 1 month, 3, 6, 12, and 24 months after cochlear implantation and compared with control (non-LVAS cochlear implant recipient) data for each array type. Forty-seven patients with exclusive LVAS and no other vestibulocochlear abnormalities or other identifiable cause of deafness were eligible for inclusion in the study. In LVAS patients, there was a significant difference in impedance between the three types of device (P < 0.0001). Time since switch on was associated with a decrease in impedance for all three devices (P < 0.0001). The mean impedance reduced between switch on and 1 month and remained relatively constant thereafter. Sound variation with softening of sounds was seen in four CI 422 (Straight Research Array) recipients due to ongoing fluctuations in electrode compliance. For all three array types, there was no significant difference in the mean impedance between the LVAS patients and controls over the first 12 months. In keeping with previous studies cochlear implant recipients with LVAS hear very well through the cochlear implant.

Lattice modification in KTiOPO4 by hydrogen and helium sequentially implantation in submicrometer depth

NASA Astrophysics Data System (ADS)

Ma, Changdong; Lu, Fei; Xu, Bo; Fan, Ranran

2016-05-01

We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO4). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 1016 cm-2, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO4 crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantation produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO4 surface from blistering.

Ab-initio calculation and experimental observation of room temperature ferromagnetism in 50 keV nitrogen implanted rutile TiO2

NASA Astrophysics Data System (ADS)

Luitel, Homnath; Chakrabarti, Mahuya; Sarkar, A.; Dechoudhury, S.; Bhowmick, D.; Naik, V.; Sanyal, D.

2018-02-01

Room temperature magnetic properties of 50 keV N4+ ion beam implanted rutile TiO2 have been theoretically and experimentally studied. Ab-initio calculation under the frame work of density functional theory has been carried out to study the magnetic properties of the different possible nitrogen related defects in TiO2. Spin polarized density of states calculation suggests that both Ninst and NO can induce ferromagnetic ordering in rutile TiO2. In both cases the 2p orbital electrons of nitrogen atom give rise to the magnetic moment in TiO2. The possibility of the formation of N2 molecule in TiO2 system is also studied but in this case no significant magnetic moment has been observed. The magnetic measurements, using SQUID magnetometer, results a ferromagnetic ordering even at room temperature for the 50 keV N4+ ion beam implanted rutile TiO2.

Selected aspects of the action of cobalt ions in the human body.

PubMed

Czarnek, Katarzyna; Terpiłowska, Sylwia; Siwicki, Andrzej K

2015-01-01

Cobalt is widespread in the natural environment and can be formed as an effect of anthropogenic activity. This element is used in numerous industrial applications and nuclear power plants. Cobalt is an essential trace element for the human body and can occur in organic and inorganic forms. The organic form is a necessary component of vitamin B12 and plays a very important role in forming amino acids and some proteins in nerve cells, and in creating neurotransmitters that are indispensable for correct functioning of the organism. Its excess or deficiency will influence it unfavourably. Salts of cobalt have been applied in medicine in the treatment of anaemia, as well as in sport as an attractive alternative to traditional blood doping. Inorganic forms of cobalt present in ion form, are toxic to the human body, and the longer they are stored in the body, the more changes they cause in cells. Cobalt gets into the body in several ways: firstly, with food; secondly by the respiratory system; thirdly, by the skin; and finally, as a component of biomaterials. Cobalt and its alloys are fundamental components in orthopaedic implants and have been used for about 40 years. The corrosion of metal is the main problem in the construction of implants. These released metal ions may cause type IV inflammatory and hypersensitivity reactions, and alternations in bone modelling that lead to aseptic loosening and implant failure. The ions of cobalt released from the surface of the implant are absorbed by present macrophages, which are involved in many of the processes associated with phagocytose orthopaedic biomaterials particles and release pro-inflammatory mediators such as interleukin-1 (IL-1), interleukin-6 (IL-6), tumour necrosis factor α (TNF-α), and prostaglandin.

Selected aspects of the action of cobalt ions in the human body

PubMed Central

Terpiłowska, Sylwia; Siwicki, Andrzej K.

2015-01-01

Cobalt is widespread in the natural environment and can be formed as an effect of anthropogenic activity. This element is used in numerous industrial applications and nuclear power plants. Cobalt is an essential trace element for the human body and can occur in organic and inorganic forms. The organic form is a necessary component of vitamin B12 and plays a very important role in forming amino acids and some proteins in nerve cells, and in creating neurotransmitters that are indispensable for correct functioning of the organism. Its excess or deficiency will influence it unfavourably. Salts of cobalt have been applied in medicine in the treatment of anaemia, as well as in sport as an attractive alternative to traditional blood doping. Inorganic forms of cobalt present in ion form, are toxic to the human body, and the longer they are stored in the body, the more changes they cause in cells. Cobalt gets into the body in several ways: firstly, with food; secondly by the respiratory system; thirdly, by the skin; and finally, as a component of biomaterials. Cobalt and its alloys are fundamental components in orthopaedic implants and have been used for about 40 years. The corrosion of metal is the main problem in the construction of implants. These released metal ions may cause type IV inflammatory and hypersensitivity reactions, and alternations in bone modelling that lead to aseptic loosening and implant failure. The ions of cobalt released from the surface of the implant are absorbed by present macrophages, which are involved in many of the processes associated with phagocytose orthopaedic biomaterials particles and release pro-inflammatory mediators such as interleukin-1 (IL-1), interleukin-6 (IL-6), tumour necrosis factor α (TNF-α), and prostaglandin. PMID:26557039

Bubble morphology in U 3Si 2 implanted by high-energy Xe ions at 300 °C

DOE PAGES

Miao, Yinbin; Harp, Jason; Mo, Kun; ...

2017-08-02

The microstructure modifications of a high-energy Xe implanted U 3Si 2, a promising accident tolerant fuel candidate, were characterized and are reported upon. The U 3Si 2 pellet was irradiated at Argonne Tandem Linac Accelerator System (ATLAS) by an 84 MeV Xe ion beam at 300 °C. The irradiated specimen was then investigated using a series of transmission electron microscopy (TEM) techniques. A dense distribution of bubbles were observed near the range of the 84 MeV Xe ions. Xe gas was also found to accumulate at multiple types of sinks, such as dislocations and grain boundaries. Bubbles aggregated at thosemore » sinks are slightly larger than intragranular bubbles in lattice. At 300 °C, the gaseous swelling strain is limited as all the bubbles are below 10 nm, implying the promising fission gas behavior of U 3Si 2 under normal operating conditions in light water reactors (LWRs).« less

Bubble morphology in U3Si2 implanted by high-energy Xe ions at 300 °C

NASA Astrophysics Data System (ADS)

Miao, Yinbin; Harp, Jason; Mo, Kun; Zhu, Shaofei; Yao, Tiankai; Lian, Jie; Yacout, Abdellatif M.

2017-11-01

The microstructure modifications of a high-energy Xe implanted U3Si2, a promising accident tolerant fuel candidate, were characterized and are reported upon. The U3Si2 pellet was irradiated at Argonne Tandem Linac Accelerator System (ATLAS) by an 84 MeV Xe ion beam at 300 °C. The irradiated specimen was then investigated using a series of transmission electron microscopy (TEM) techniques. A dense distribution of bubbles were observed near the range of the 84 MeV Xe ions. Xe gas was also found to accumulate at multiple types of sinks, such as dislocations and grain boundaries. Bubbles aggregated at those sinks are slightly larger than intragranular bubbles in lattice. At 300 °C, the gaseous swelling strain is limited as all the bubbles are below 10 nm, implying the promising fission gas behavior of U3Si2 under normal operating conditions in light water reactors (LWRs).

Tailoring of the thermomechanical performance of VO2 nanowire bimorph actuators by ion implantation

NASA Astrophysics Data System (ADS)

Karl, H.; Peyinghaus, S. C.

2015-12-01

Vanadium dioxide VO2 nanowire bimorph actuators work on the basis of the large abrupt length change at the metal-insulator phase transition (MIT). A key parameter for the bimorph performance and efficiency is the bending curvature and the width of the temperature hysteresis of the MIT which is inherently large for single domain VO2 metal side coated nanowires. In this work we present single-clamped Ir side coated VO2 bimorphs which show unprecedented high bending curvatures of up to 105 m-1 and new type of side ion-implanted VO2 nanowire bimorph actuators with a nearly completely suppressed temperature hysteresis. It is assumed that ion-beam induced radiation defects in the VO2 crystal structure act as nucleation sites for the MIT. Moreover it will be shown that mechanical strain intentionally built-in during VO2 nanowire bimorph fabrication allows to direct phase transformation via a strain stabilized metastable phase and thus allows to control bending response on temperature change.

Ion Implantation Doping of Inertial Confinement Fusion Targets

DOE PAGES

Shin, S. J.; Lee, J. R. I.; van Buuren, T.; ...

2017-12-19

Controlled doping of inertial confinement fusion (ICF) targets is needed to enable nuclear diagnostics of implosions. Here in this study, we demonstrate that ion implantation with a custom-designed carousel holder can be used for azimuthally uniform doping of ICF fuel capsules made from a glow discharge polymer (GDP). Particular emphasis is given to the selection of the initial wall thickness of GDP capsules as well as implantation and postimplantation annealing parameters in order to minimize capsule deformation during a postimplantation thermal treatment step. In contrast to GDP, ion-implanted high-density carbon exhibits excellent thermal stability and ~100% implantation efficiency for themore » entire range of ion doses studied (2 × 10 14 to 1 × 10 16 cm -2) and for annealing temperatures up to 700°C. Lastly, we demonstrate a successful doping of planar Al targets with isotopes of Kr and Xe to doses of ~10 17 cm -2.« less

Ion Implantation Doping of Inertial Confinement Fusion Targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, S. J.; Lee, J. R. I.; van Buuren, T.

Controlled doping of inertial confinement fusion (ICF) targets is needed to enable nuclear diagnostics of implosions. Here in this study, we demonstrate that ion implantation with a custom-designed carousel holder can be used for azimuthally uniform doping of ICF fuel capsules made from a glow discharge polymer (GDP). Particular emphasis is given to the selection of the initial wall thickness of GDP capsules as well as implantation and postimplantation annealing parameters in order to minimize capsule deformation during a postimplantation thermal treatment step. In contrast to GDP, ion-implanted high-density carbon exhibits excellent thermal stability and ~100% implantation efficiency for themore » entire range of ion doses studied (2 × 10 14 to 1 × 10 16 cm -2) and for annealing temperatures up to 700°C. Lastly, we demonstrate a successful doping of planar Al targets with isotopes of Kr and Xe to doses of ~10 17 cm -2.« less

The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer

NASA Astrophysics Data System (ADS)

Gloux, F.; Ruterana, P.; Wojtowicz, T.; Lorenz, K.; Alves, E.

2006-10-01

The crystallographic nature of the damage created in GaN implanted by rare earth ions at 300 keV and room temperature has been investigated by transmission electron microscopy versus the fluence, from 7×10 13 to 2×10 16 at/cm 2, using Er, Eu or Tm ions. The density of point defect clusters was seen to increase with the fluence. From about 3×10 15 at/cm 2, a highly disordered 'nanocrystalline layer' (NL) appears on the GaN surface. Its structure exhibits a mixture of voids and misoriented nanocrystallites. Basal stacking faults (BSFs) of I 1, E and I 2 types have been noticed from the lowest fluence, they are I 1 in the majority. Their density increases and saturates when the NL is observed. Many prismatic stacking faults (PSFs) with Drum atomic configuration have been identified. The I 1 BSFs are shown to propagate easily through GaN by folding from basal to prismatic planes thanks to the PSFs. When implanting through a 10 nm AlN cap, the NL threshold goes up to about 3×10 16 at/cm 2. The AlN cap plays a protective role against the dissociation of the GaN up to the highest fluences. The flat surface after implantation and the absence of SFs in the AlN cap indicate its high resistance to the damage formation.

Plasma immersion ion implantation of polyurethane shape memory polymer: Surface properties and protein immobilization

NASA Astrophysics Data System (ADS)

Cheng, Xinying; Kondyurin, Alexey; Bao, Shisan; Bilek, Marcela M. M.; Ye, Lin

2017-09-01

Polyurethane-type shape memory polymers (SMPU) are promising biomedical implant materials due to their ability to recover to a predetermined shape from a temporary shape induced by thermal activation close to human body temperature and their advantageous mechanical properties including large recovery strains and low recovery stresses. Plasma Immersion Ion Implantation (PIII) is a surface modification process using energetic ions that generates radicals in polymer surfaces leading to carbonisation and oxidation and the ability to covalently immobilise proteins without the need for wet chemistry. Here we show that PIII treatment of SMPU significantly enhances its bioactivity making SMPU suitable for applications in permanent implantable biomedical devices. Scanning Electron Microscopy (SEM), contact angle measurements, surface energy measurements, attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterise the PIII modified surface, including its after treatment aging kinetics and its capability to covalently immobilise protein directly from solution. The results show a substantial improvement in wettability and dramatic changes of surface chemical composition dependent on treatment duration, due to the generation of radicals and subsequent oxidation. The SMPU surface, PIII treated for 200s, achieved a saturated level of covalently immobilized protein indicating that a full monolayer coverage was achieved. We conclude that PIII is a promising and efficient surface modification method to enhance the biocompatibility of SMPU for use in medical applications that demand bioactivity for tissue integration and stability in vivo.

Ion implantation for manufacturing bent and periodically bent crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo, E-mail: guidi@fe.infn.it

2015-08-10

Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to producemore » X-ray beams.« less

Ion beam synthesis of ZrC{sub x}O{sub y} nanoparticles in cubic zirconia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velişa, Gihan, E-mail: gihan@tandem.nipne.ro; Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele; Mylonas, Stamatis

2016-04-28

{110}-oriented yttria-stabilized zirconia single crystals have been implanted with low-energy C ions in an axial direction, at room temperature and at 550 °C. Room temperature ion implantation generated a damage layer that contains the expected dislocation loop clusters. Strikingly, the high temperature implantation produced zirconium oxycarbide nanoparticles (ZrC{sub x}O{sub y}) at a shallow depth in the yttria-stabilized cubic zirconia crystal, with a diameter in the range of 4–10 nm. Moreover, in the high concentration region of implanted C ions, between 100 and 150 nm below the surface, a number of large precipitates, up to 20 nm, were observed.

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Goto, Ken; Morikawa, Yoji; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

2018-06-01

A vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistor featuring a planar-gate architecture is presented. The device was fabricated by an all-ion-implanted process without requiring trench etching or epitaxial regrowth. A Mg-ion-implanted current blocking layer (CBL) provided electrical isolation between the source and the drain except at an aperture opening through which drain current was conducted. Successful transistor action was realized by gating a Si-ion-implanted channel above the CBL. Thermal diffusion of Mg induced a large source–drain leakage current through the CBL, which resulted in compromised off-state device characteristics as well as a reduced peak extrinsic transconductance compared with the results of simulations.

Super-hard cubic BN layer formation by nitrogen ion implantation

NASA Astrophysics Data System (ADS)

Komarov, F. F.; Pilko, V. V.; Yakushev, V. A.; Tishkov, V. S.

1994-11-01

Microcrystalline and amorphous boron thin films were implanted with nitrogen ions at energies from 25 to 125 keV and with doses from 2 × 10 17 to 1 × 10 18 at.cm 2 at temperatures below 200°C. The structure of boron nitride phases after ion implantation, formation of phases and phase transformations were investigated by TEM and TED methods. The cubic boron nitride phase is revealed. The microhardness of the formed films was satisfactorily explained in terms of chemical compound formation by polyenergetic ion implantation. The influence of the copper impurity on the formation of the cubic boron nitride phase is demonstrated. It has also been shown that low concentrations of copper promote cubic BN boundary formation.

Less-Costly Ion Implantation of Solar Cells

NASA Technical Reports Server (NTRS)

Fitzgerald, D. J.

1984-01-01

Experiments point way toward more relaxed controls over ion-implanation dosage and uniformity in solar-cell fabrication. Data indicate cell performance, measured by output current density at fixed voltage, virtually same whether implant is particular ion species or broad-beam mixture of several species.

A silicon technology for millimeter-wave monolithic circuits

NASA Astrophysics Data System (ADS)

Stabile, P. J.; Rosen, A.

1984-12-01

A silicon millimeter-wave integrated-circuit (SIMMWIC) technology that includes high-energy ion implantation and pulsed-laser annealing, secondary ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning has been developed. This technology has been applied to a SIMMWIC single-pole single-throw (SPST) switch and to IMPATT and p-i-n diode fabrication schemes. Thus, the SIMMWIC technology is a proven base for monolithic millimeter-wave sources and control circuit applications.

A hot implantation study on the evolution of defects in He ion implanted MgO(1 0 0)

NASA Astrophysics Data System (ADS)

Fedorov, A. V.; van Huis, M. A.; van Veen, A.

2002-05-01

Ion implantation at elevated temperature, so-called hot implantation, was used to study nucleation and thermal stability of the defects. In this work, MgO(1 0 0) single crystal samples were implanted with 30 keV He ions at various implantation temperatures. The implantation doses ranged from 10 14 to 10 16 cm -2. The implantation introduced defects were subsequently studied by thermal helium desorption spectroscopy (THDS) and Doppler broadening positron beam analysis (PBA). The THDS study provides vital information on the kinetics of He release from the sample. PBA technique, being sensitive to the open volume defects, provides complementary information on cavity evolution. The THD study has shown that in most cases helium release is characterised by the activation energy of Q=4.7±0.5 eV with the maximum release temperature of Tmax=1830 K. By applying first order desorption model the pre-exponent factor is estimated as ν=4.3×10 11 s -1.

Porcelain-coated antenna for radio-frequency driven plasma source

DOEpatents

Leung, K.N.; Wells, R.P.; Craven, G.E.

1996-12-24

A new porcelain-enamel coated antenna creates a clean plasma for volume or surface-conversion ion sources. The porcelain-enamel coating is hard, electrically insulating, long lasting, non fragile, and resistant to puncture by high energy ions in the plasma. Plasma and ion production using the porcelain enamel coated antenna is uncontaminated with filament or extraneous metal ions because the porcelain does not evaporate and is not sputtered into the plasma during operation. Ion beams produced using the new porcelain-enamel coated antenna are useful in ion implantation, high energy accelerators, negative, positive, or neutral beam applications, fusion, and treatment of chemical or radioactive waste for disposal. For ion implantation, the appropriate species ion beam generated with the inventive antenna will penetrate large or small, irregularly shaped conducting objects with a narrow implantation profile. 8 figs.

Characterization of an Mg-implanted GaN p-i-n Diode

DTIC Science & Technology

2016-03-31

unintentionally doped GaN layer was grown by metal organic chemical vapor deposition (MOCVD) on a n+ Ga -face c-oriented GaN substrate. The as-grown MOCVD film...their proper lattice sites. In the case of Mg implanted GaN , the Mg must replace Ga to result in p-type material. In many other semiconductor...Characterization of an Mg-implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J

Effects of Thread Depth in the Neck Area on Peri-Implant Hard and Soft Tissues: An Animal Study.

PubMed

Sun, Shan-Pao; Lee, Dong-Won; Yun, Jeong-Ho; Park, Kwang-Ho; Park, Kwang-Bum; Moon, Ik-Sang

2016-11-01

Implants with deep thread depth have been developed for the purpose of increasing total implant surface area. However, effects of implant thread depth remain controversial. The aim of this study is to examine effects of thread depth on peri-implant tissues in terms of bone-implant contact (BIC), bone-implant volume (BIV), and hard and soft tissue dimensions using comprehensive analyses, including microcomputed tomography (micro-CT). Five beagle dogs received experimental intramandibular implants 3 months after removal of their premolars and first molars (P 2 , P 3 , P 4 , and M 1 ). Two different types of implants were installed in each animal: deep threaded (DT) and shallow threaded (ST). Resonance frequency testing was performed on the day of implantation as well as 4 and 8 weeks after implantation. Intraoral radiography, micro-CT, and histomorphometry were used to evaluate peri-implant tissues 4 and 8 weeks after implantation. There were no significant differences in resonance frequency test results between the two groups. Although radiographic analysis showed no group differences, micro-CT (P = 0.01) and histomorphometry (P = 0.003) revealed the DT group had significantly lower BIC values than the ST group at 4 weeks. However, by 8 weeks, BIC values of the two groups did not differ significantly. No significant differences in BIV or soft tissue height were observed between the two groups at either time point. DT implants showed no benefits over ST implants when inserted in dog mandibles.

Oxygen ion implantation induced microstructural changes and electrical conductivity in Bakelite RPC detector material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, K. V. Aneesh, E-mail: aneesh1098@gmail.com; Ravikumar, H. B., E-mail: hbr@physics.uni-mysore.ac.in; Ranganathaiah, C., E-mail: cr@physics.uni-mysore.ac.in

2016-05-06

In order to explore the structural modification induced electrical conductivity, samples of Bakelite Resistive Plate Chamber (RPC) detector materials were exposed to 100 keV Oxygen ion in the fluences of 10{sup 12}, 10{sup 13}, 10{sup 14} and 10{sup 15} ions/cm{sup 2}. Ion implantation induced microstructural changes have been studied using Positron Annihilation Lifetime Spectroscopy (PALS) and X-Ray Diffraction (XRD) techniques. Positron lifetime parameters viz., o-Ps lifetime and its intensity shows the deposition of high energy interior track and chain scission leads to the formation of radicals, secondary ions and electrons at lower ion implantation fluences (10{sup 12} to10{sup 14} ions/cm{supmore » 2}) followed by cross-linking at 10{sup 15} ions/cm{sup 2} fluence due to the radical reactions. The reduction in electrical conductivity of Bakelite detector material is correlated to the conducting pathways and cross-links in the polymer matrix. The appropriate implantation energy and fluence of Oxygen ion on polymer based Bakelite RPC detector material may reduce the leakage current, improves the efficiency, time resolution and thereby rectify the aging crisis of the RPC detectors.« less

Do cobalt and chromium levels predict osteolysis in metal-on-metal total hip arthroplasty?

PubMed

Renner, Lisa; Schmidt-Braekling, Tom; Faschingbauer, Martin; Boettner, Friedrich

2016-12-01

Serum metal ions are part of the regular follow-up routine of patients with metal-on-metal total hip arthroplasties (MoM-THA). Increased cobalt levels have been suggested to indicate implant failure and corrosion. (1) Is there a correlation between the size of the osteolysis measured on a CT scan and metal ion levels? (2) Can metal ion levels predict the presence of osteolysis in MoM-THA? (3) Are cobalt and chromium serum levels or the cobalt-chromium-ratio diagnostic for osteolysis? CT scans of patients (n = 75) with a unilateral MoM-THA (Birmingham Hip System, Smith & Nephew, TN, USA) implanted by a single surgeon were reviewed to determine the presence of osteolysis. Statistical analysis was performed to detect its association with metal ion levels at the time of the imaging exam. The incidence of osteolysis was the same in men and women (35.6 vs 35.7 %). The cobalt-chromium-ratio correlates with the size of the osteolysis on the CT scan and the femoral component size in the overall study population (p = 0.050, p = 0.001) and in men (p = 0.002, p = 0.001) but not in women (p = 0.312, p = 0.344). The AUC for the cobalt-chromium-ratio to detect osteolysis was 0.613 (p = 0.112) for the overall population, 0.710 for men (p = 0.021) and 0.453 (p = 0.684) for women. The data suggest that a cut off level of 1.71 for the cobalt-chromium-ratio has a sensitivity of 62.5 % and specificity of 72.4 % to identify male patients with osteolysis. The disproportional increase of cobalt over chromium, especially in male patients with large component sizes can not be explained by wear alone and suggests that other processes (corrosion) might contribute to metal ion levels and might be more pronounced in patients with larger component sizes.

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressuremore » of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.« less

Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Toda, Yoshitake; Hayashi, Katsuro; Hirano, Masahiro; Kamiya, Toshio; Matsunami, Noriaki; Hosono, Hideo

2005-01-01

Inert gas ion implantation (acceleration voltage 300kV) into polycrystalline 12CaO.7Al2O3 (C12A7) films was investigated with fluences from 1×1016 to 1×1017cm-2 at elevated temperatures. Upon hot implantation at 600°C with fluences greater than 1×1017cm-2, the obtained films were colored and exhibited high electrical conductivity in the as-implanted state. The extrusion of O2- ions encaged in the crystallographic cages of C12A7 crystal, which leaves electrons in the cages at concentrations up to ˜1.4×1021cm-3, may cause the high electrical conductivity. On the other hand, when the fluence is less than 1×1017cm-2, the as-implanted films are optically transparent and electrically insulating. The conductivity is enhanced and the films become colored by irradiating with ultraviolet light due to the formation of F +-like centers. The electrons forming the F+-like centers are photo released from the encaged H- ions, which are presumably derived from the preexisting OH- groups. The induced electron concentration is proportional to the calculated displacements per atom, which suggests that nuclear collision effects of the implanted ions play a dominant role in forming the electron and H- ion in the films. The hot ion implantation technique provides a nonchemical process for preparing electronic conductive C12A7 films.

Increased Biocompatibility and Bioactivity after Energetic PVD Surface Treatments

PubMed Central

Mändl, Stephan

2009-01-01

Ion implantation, a common technology in semiconductor processing, has been applied to biomaterials since the 1960s. Using energetic ion bombardment, a general term which includes conventional ion implantation plasma immersion ion implantation (PIII) and ion beam assisted thin film deposition, functionalization of surfaces is possible. By varying and adjusting the process parameters, several surface properties can be attuned simultaneously. Extensive research details improvements in the biocompatibility, mainly by reducing corrosion rates and increasing wear resistance after surface modification. Recently, enhanced bioactivity strongly correlated with the surface topography and less with the surface chemistry has been reported, with an increased roughness on the nanometer scale induced by self-organisation processes during ion bombardment leading to faster cellular adhesion processes.

Friction wear and auger analysis of iron implanted with 1.5-MeV nitrogen ions

NASA Technical Reports Server (NTRS)

Ferrante, J.; Jones, W. R., Jr.

1982-01-01

The effect of implantation of 1.5-MeV nitrogen ions on the friction and wear characteristics of pure iron sliding against steel was studied in a pin-on disk apparatus. An implantation dose of 5 x 10 to the 17th power ions/sq cm was used. Small reductions in initial and steady-state wear rates were observed for nitrogen-implanted iron riders as compared with unimplanted controls. Auger electron spectroscopy revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 15 at. % at a depth of 8 x 10 to the -7th m. A similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration, thus giving no evidence for diffusion of nitrogen beyond the implanted range.

Effects of CPII implantation on the characteristics of diamond-like carbon films

NASA Astrophysics Data System (ADS)

Chen, Ya-Chi; Weng, Ko-Wei; Chao, Ching-Hsun; Lien, Shui-Yang; Han, Sheng; Chen, Tien-Lai; Lee, Ying-Chieh; Shih, Han-Chang; Wang, Da-Yung

2009-05-01

A diamond-like carbon film (DLC) was successfully synthesized using a hybrid PVD process, involving a filter arc deposition source (FAD) and a carbon plasma ion implanter (CPII). A quarter-torus plasma duct filter markedly reduced the density of the macro-particles. Graphite targets were used in FAD. Large electron and ion energies generated from the plasma duct facilitate the activation of carbon plasma and the deposition of high-quality DLC films. M2 tool steel was pre-implanted with 45 kV carbon ions before the DLC was deposited to enhance the adhesive and surface properties of the film. The ion mixing effect, the induction of residual stress and the phase transformation at the interface were significantly improved. The hardness of the DLC increased to 47.7 GPa and 56.5 GPa, and the wear life was prolonged to over 70 km with implantation fluences of 1 × 10 17 ions/cm 2 and 2 × 10 17 ions/cm 2, respectively.

Broad beam ion implanter

DOEpatents

Leung, K.N.

1996-10-08

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

Broad beam ion implanter

DOEpatents

Leung, Ka-Ngo

1996-01-01

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

Accuracy of fit of implant-supported bars fabricated on definitive casts made by different dental stones

PubMed Central

Kioleoglou, Ioannis; Pissiotis, Argirios

2018-01-01

Background The purpose of this study was to evaluate the accuracy of fitting of an implant supported screw-retained bar made on definitive casts produced by 4 different dental stone products. Material and Methods The dental stones tested were QuickRock (Protechno), FujiRock (GC), Jade Stone (Whip Mix) and Moldasynt (Heraeus). Three external hexagon implants were placed in a polyoxymethylene block. Definitive impressions were made using monophase high viscosity polyvinylsiloxane in combination with custom trays. Then, definitive models from the different types of dental stones were fabricated. Three castable cylinders with a machined non-enganging base were cast and connected with a very small quantity of PMMA to a cast bar, which was used to verify the marginal discrepancies between the abutments and the prosthetic platforms of the implants. For that purpose special software and a camera mounted on an optical microscope were used. The gap was measured by taking 10 measurements on each abutment, after the Sheffield test was applied. Twelve definitive casts were fabricated for each gypsum product and 40 measurements were performed for each cast. Mean, minimum, and maximum values were calculated. The Shapiro-Wilk test of normality was performed. Mann-Whitney test (P<.06) was used for the statistical analysis of the measurements. Results The non-parametric Kruskal-Wallis test revealed a statistically significant effect of the stone factor on the marginal discrepancy for all Sheffield test combinations: 1. Abutment 2 when screw was fastened on abutment 1 (χ2=3, df=35.33, P<0.01), 2. Abutment 3 when the screw was fastened on abutment 1 (χ2=3, df=37.74, P<0.01), 3. Abutment 1 when the screw was fastened on abutment 3 (χ2=3, df=39.79, P<0.01), 4. Abutment 2 when the screw was fastened on abutment 3 (χ2=3, df=37.26, P<0.01). Conclusions A significant correlation exists between marginal discrepancy and different dental gypsum products used for the fabrication of definitive casts for implant supported bars. The smallest marginal discrepancy was noted on implant supported bars fabricated on definitive casts made by Type III mounting stone. The biggest marginal discrepancy was noted on implant supported bars fabricated on definitive casts made by Type V dental stone. The marginal discrepancies presented on implant supported bars fabricated on definitive casts made by two types of Type IV dental stone were not significantly different. Key words:Dental implant, passive fit, dental stones, marginal discrepancy. PMID:29721227

Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon.

PubMed

Fisicaro, G; Pelaz, L; Lopez, P; La Magna, A

2012-09-01

Pulsed laser irradiation of damaged solids promotes ultrafast nonequilibrium kinetics, on the submicrosecond scale, leading to microscopic modifications of the material state. Reliable theoretical predictions of this evolution can be achieved only by simulating particle interactions in the presence of large and transient gradients of the thermal field. We propose a kinetic Monte Carlo (KMC) method for the simulation of damaged systems in the extremely far-from-equilibrium conditions caused by the laser irradiation. The reference systems are nonideal crystals containing point defect excesses, an order of magnitude larger than the equilibrium density, due to a preirradiation ion implantation process. The thermal and, eventual, melting problem is solved within the phase-field methodology, and the numerical solutions for the space- and time-dependent thermal field were then dynamically coupled to the KMC code. The formalism, implementation, and related tests of our computational code are discussed in detail. As an application example we analyze the evolution of the defect system caused by P ion implantation in Si under nanosecond pulsed irradiation. The simulation results suggest a significant annihilation of the implantation damage which can be well controlled by the laser fluence.

Ion Implantation in Polymers.

DTIC Science & Technology

1983-08-01

cases, the crystalline regions are often lamellar in struct- rg and the lamellae fre- quently occur in some form of spherulitic morphology. Since, in a...12181 Dr. D. H. Whitmore Department of Materials Science Dr. A. P. B. Lever Northwestern University Chemistry Department Evanston, Illinois 60201 1 York

Analysis and evalaution in the production process and equipment area of the low-cost solar array project. [including modifying gaseous diffusion and using ion implantation

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.

Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

NASA Technical Reports Server (NTRS)

Fonash, S. J.

1985-01-01

New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

[Survey on the use and behaviour of metal-metal hip replacements in Spain].

PubMed

Calcerrada, N; Fernández-Vega, A; Valls-León, C; Garcia-Cimbrelo, E

2016-01-01

Following medical device alerts published in different countries of problems with metal-on-metal total hip replacements, the Spanish Agency of Medicines and Medical Devices (AEMPS) in collaboration with the Spanish Hip Society Surgery designed a national survey to gather information on the use and behaviour of these hip implants. The survey consisted of a questionnaire sent by e-mail to 283 clinical centre recipients of metal-on-metal hips to be filled in by surgeons with expertise in the field. A total of 257 questionnaires were completed. The response rate of the clinical centres was 36.7%. A total of 97.7% of the responses reported that clinical and radiological follow-ups are carried out, and 79.6% undertook metal ion analyses (chromium and cobalt). A large majority (83.6%) of the responders who had who used surface implants, and 70% of those with large-head implants reported peri-operative complications. The most common complication was pain (25% with surface implants and 30.8% with large-head implants). Currently 80.8% of those responding were considering abandoning implanting of these hip replacements. Despite the many limitations to this study, the survey has allowed us to obtain in a quick first view of the implant scenario of Metal on Metal hip implants in Spain, and to determine the type of patient implanted, the time of implantation, and the experience/expertise of the surgeons, and the type of follow-up carried out. Copyright © 2015 SECOT. Published by Elsevier Espana. All rights reserved.

Asymptomatic prospective and retrospective cohorts with metal-on-metal hip arthroplasty indicate acquired lymphocyte reactivity varies with metal ion levels on a group basis

PubMed Central

Hallab, NJ; Caicedo, M; McAllister, K; Skipor, A; Amstutz, H; Jacobs, JJ

2012-01-01

Some tissues from metal-on-metal (MoM) hip arthroplasty revisions have shown evidence of adaptive-immune reactivity (i.e., excessive peri-implant lymphocyte infiltration/activation). We hypothesized that, prior to symptoms, some people with MoM hip arthroplasty will develop quantifiable metal-induced lymphocyte reactivity responses related to peripheral metal ion levels. We tested 3 cohorts (Group-1: n=21 prospective longitudinal MoM hip arthroplasty; Group-2: n=17 retrospective MoM hip arthroplasty; and Group-3: n=20 controls without implants). We compared implant position, metal-ion release, and immuno-reactivity. MoM cohorts had elevated (p<0.01) amounts of serum Co and Cr compared to controls as early as 3 mos post-op (Group-1:1.2ppb-Co, 1.5ppb-Cr; Group-2: 3.4ppb-Co,, 5.4ppb-Cr; Group-3: 0.01ppb-Co, 0.1ppb-Cr). However, only after 1 to 4 yrs post-op did 56% of Group-1 develop metal-reactivity (vs. 5%pre-op, metal-LTT, SI>2), compared with 76% of Group-2 and 15% of Group-3 controls (patch testing was a poor diagnostic indicator with only 1/21 Group-1 positive). Higher cup-abduction angles (50° vs. 40°) in Group-1 were associated with higher serum Cr (p<0.07). However, sub-optimal cup-anteversion angles (9° vs. 20°) had higher serum Co (p<0.08). Serum Cr and Co were significantly elevated in reactive vs. non-reactive Group-1 participants (p<0.04). CD4+CD69+ T-helper lymphocytes (but not CD8+) and IL-1β, IL-12 and IL-6 cytokines were all significantly elevated in metal-reactive vs. non-reactive Group-1 participants. Our results showed that lymphocyte reactivity to metals can develop within the first 1 to 4 years after MoM arthroplasty in asymptomatic patients and lags increases in metal ion levels. This increased metal reactivity was more prevalent in those individuals with extreme cup angles and higher amounts of circulating metal. PMID:22941579

Graded Microstructure and Mechanical Performance of Ti/N-Implanted M50 Steel with Polyenergy.

PubMed

Jie, Jin; Shao, Tianmin

2017-10-19

M50 bearing steels were alternately implanted with Ti⁺ and N⁺ ions using solid and gas ion sources of implantation system, respectively. N-implantation was carried out at an energy of about 80 keV and a fluence of 2 × 10 17 ions/cm², and Ti-implantation at an energy of about 40-90 keV and a fluence of 2 × 10 17 ions/cm². The microstructures of modification layers were analyzed by grazing-incidence X-ray diffraction, auger electron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results showed that the gradient structure was formed under the M50 bearing steel subsurface, along the ion implantation influence zone composed of amorphous, nanocrystalline, and gradient-refinement phases. A layer of precipitation compounds like TiN is formed. In addition, nano-indentation hardness and tribological properties of the gradient structure subsurface were examined using a nano-indenter and a friction and wear tester. The nano-indentation hardness of N + Ti-co-implanted sample is above 12 GPa, ~1.3 times than that of pristine samples. The friction coefficient is smaller than 0.2, which is 22.2% of that of pristine samples. The synergism between precipitation-phase strengthening and gradient microstructure is the main mechanism for improving the mechanical properties of M50 materials.

Graded Microstructure and Mechanical Performance of Ti/N-Implanted M50 Steel with Polyenergy

PubMed Central

Jie, Jin; Shao, Tianmin

2017-01-01

M50 bearing steels were alternately implanted with Ti+ and N+ ions using solid and gas ion sources of implantation system, respectively. N-implantation was carried out at an energy of about 80 keV and a fluence of 2 × 1017 ions/cm2, and Ti-implantation at an energy of about 40–90 keV and a fluence of 2 × 1017 ions/cm2. The microstructures of modification layers were analyzed by grazing-incidence X-ray diffraction, auger electron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results showed that the gradient structure was formed under the M50 bearing steel subsurface, along the ion implantation influence zone composed of amorphous, nanocrystalline, and gradient-refinement phases. A layer of precipitation compounds like TiN is formed. In addition, nano-indentation hardness and tribological properties of the gradient structure subsurface were examined using a nano-indenter and a friction and wear tester. The nano-indentation hardness of N + Ti-co-implanted sample is above 12 GPa, ~1.3 times than that of pristine samples. The friction coefficient is smaller than 0.2, which is 22.2% of that of pristine samples. The synergism between precipitation-phase strengthening and gradient microstructure is the main mechanism for improving the mechanical properties of M50 materials. PMID:29048360

Mechanical properties of pulsed laser-deposited hydroxyapatite thin films implanted at high energy with N + and Ar + ions. Part II: nano-scratch tests with spherical tipped indenter

NASA Astrophysics Data System (ADS)

Pelletier, H.; Nelea, V.; Mille, P.; Muller, D.

2004-02-01

In this study we report a method to improve the adherence of hydroxyapatite (HA) thin films, using an ion beam implantation treatment. Crystalline HA films were grown by pulsed laser deposition technique (PLD), using an excimer KrF * laser. The films were deposited at room temperature in vacuum on Ti-5Al-2.5Fe alloy substrates previously coated with a ceramic TiN buffer layer and then annealed in ambient air at (500-600) °C. After deposition the films were implanted with N + and Ar + ions accelerated at high energy (1-1.5 MeV range) at a fixed dose of 10 16 cm -2. The intrinsic mechanical resistance and adherence to the TiN buffer layer of the implanted HA films have been evaluated by nano-scratch tests. We used for measurements a spherical indenter with a tip radius of 5 μm. Different scratch tests have been performed on implanted and unimplanted areas of films to put into evidence the effects of N + and Ar + ion implantation process on the films properties. Results show an enhancement of the dynamic mechanical properties in the implanted zones and influence of the nature of the implanted species. The best results are obtained for films implanted with nitrogen.