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Sample records for ion-beam assisted silicon

  1. Ion beam assisted deposition of hydrogenated amorphous silicon nitride

    NASA Astrophysics Data System (ADS)

    Hubler, G. K.; Donovan, E. P.; Gossett, C. R.

    1994-06-01

    Hydrogenated silicon nitride films were produced near room temperature by electron beam evaporation of Si and simultaneous bombardment with a 500 eV ammonia ion beam from a Kaufman ion source and for a variety of ratios of incident charge to evaporant fluxes. The composition of N, Si and H in the films as a function of ion current density was measured by means of Rutherford backscattering and elastic recoil detection analyses. Reflection and transmission spectroscopy in the wavelength range 400 nm to 3125 nm were employed to measure optical thickness and refractive index. From the data we extracted the number of nitrogen atoms in the ammonia beam per unit charge collected, the sputtering coefficient for ammonia incident on Si, and the refractive index versus composition of the alloys. At the highest N composition, the films were clear in the visible with the UV cut-off less than 400 nm, the index was 1.80 which is lower than that of pure Si3N4 and the H content was as high as 27 at.%.

  2. Focused ion beam-assisted fabrication of soft high-aspect ratio silicon nanowire atomic force microscopy probes.

    PubMed

    Knittel, Peter; Hibst, Nicolas; Mizaikoff, Boris; Strehle, Steffen; Kranz, Christine

    2017-03-28

    In this study, high-aspect ratio silicon nanowire (SiNW) - modified atomic force microscopy (AFM) probes are fabricated using focused ion beam (FIB) microfabrication technology and vapor-solid-solid synthesis. Commercially available soft silicon nitride probes are used for localized nanowire growth yielding soft high-aspect ratio AFM probes. The SiNW-modified cantilevers are used here for imaging in PeakForce Tappingۛ (PFT) mode, which offers high force control along with valuable information about tip-sample adhesion. A platinum catalyst, deposited accurately at a truncated AFM tip by ion beam-induced deposition (IBID), was used for localized nanowire synthesis. It could be shown that the deposition of a thin silicon dioxide layer prior to the catalyst deposition resulted in controlled SiNW growth on silicon as well as silicon nitride probes. In addition, a FIB-based method for post-growth alignment of the fabricated SiNW tips is presented, which allows tilt-compensation specifically tailored to the specifications of the used AFM instrumentation. To demonstrate the capability of such soft, high-aspect ratio AFM probes, optical gratings fabricated in GaAs and silver halide fibers were imaged in PFT mode. Additionally, the mechanical stability of these high-aspect AFM probes was evaluated on a sapphire substrate.

  3. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    NASA Astrophysics Data System (ADS)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  4. Ion beam synthesis of carbon assisted nanosystems in silicon based substrates

    NASA Astrophysics Data System (ADS)

    Poudel, Prakash Raj

    The systematic study of the formation of beta-SiC formed by low energy carbon ion (C-) implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline beta-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of beta-SiC by the process of implantation of different carbon ion fluences of 1x1017, 2x1017, 5x1017, and 8x1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of beta-SiC crystals decreased and the amount of beta-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of beta-SiC linearly increased with the implanted fluences up to 5x1017 atoms /cm2. Above this fluence the amount of beta-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8x1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process in silica and the characterization of formed clusters is presented. Silicon dioxide layers ˜500 nm thick are thermally grown on a Si (100) wafer. The SiO2 layers are then implanted with 70 keV carbon ion at a fluence of 5x1017 atoms/cm2 . The implanted samples are annealed at 1100 °C for different time periods of 10 min., 30 min., 60 min., 90 min., and 120 min.,in the mixture of argon and hydrogen gas (96 % Ar + 4% hydrogen). Photoluminescence spectroscopy revealed UV to visible emission from the samples. A detail mechanism of the photoluminescence and its possible origin is discussed by correlating the structural and optical properties of the samples. Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction spectroscopy, photoluminescence

  5. Metal assisted focused-ion beam nanopatterning

    NASA Astrophysics Data System (ADS)

    Kannegulla, Akash; Cheng, Li-Jing

    2016-09-01

    Focused-ion beam milling is a versatile technique for maskless nanofabrication. However, the nonuniform ion beam profile and material redeposition tend to disfigure the surface morphology near the milling areas and degrade the fidelity of nanoscale pattern transfer, limiting the applicability of the technique. The ion-beam induced damage can deteriorate the performance of photonic devices and hinders the precision of template fabrication for nanoimprint lithography. To solve the issue, we present a metal assisted focused-ion beam (MAFIB) process in which a removable sacrificial aluminum layer is utilized to protect the working material. The new technique ensures smooth surfaces and fine milling edges; in addition, it permits direct formation of v-shaped grooves with tunable angles on dielectric substrates or metal films, silver for instance, which are rarely achieved by using traditional nanolithography followed by anisotropic etching processes. MAFIB was successfully demonstrated to directly create nanopatterns on different types of substrates with high fidelity and reproducibility. The technique provides the capability and flexibility necessary to fabricate nanophotonic devices and nanoimprint templates.

  6. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  7. Synthesis and characterization of ion beam assisted silver nanosystems in silicon based materials for enhanced photocurrent collection efficiency

    NASA Astrophysics Data System (ADS)

    Dhoubhadel, Mangal S.

    In recent years a great deal of interest has been focused on the synthesis of transitional metal (e.g. Ag, Cu, Fe, Au) nanosystems at the surface to sub-surface regions of Si and SiO2 matrices for fundamental understanding of their structures as well as for development of technological applications with enhanced electronic and optical properties. The applications of the metal nanoparticle or nanocluster (NC) systems range from plasmonics, photovoltaic devices, medical, and biosensors. In all of these applications; the size, shape and distribution of the metallic NCs in the silicon matrix play a key role. Low energy ion implantation followed by thermal annealing (in vacuum or gas environment) is one of the most suitable methods for synthesis of NCs at near surfaces to buried layers below the surfaces of the substrates. This technique can provide control over depth and concentration of the implanted ions in the host matrix. The implanted low energy metal ions initially amorphizes the Si substrates while being distributed at a shallow depth near the substrate surface. When subject to thermal annealing, the implanted ions agglomerate to form clusters of different sizes at different depths depending upon the fluence. However, for the heavier ions implanted with high fluences (˜1x10 16 - 1x1017 atoms/cm2), there lies challenges for accurately predicting the distribution of the implanted ions due to sputtering of the surface as well as redistribution of the implants within the host matrix. In this dissertation, we report the investigation of the saturation of the concentration of the implanted ion species in the depth profiles with low energies (< 80 keV) metal ions (Ag and Au) in Si (100), while studying the dynamic changes during the ion implantation. (Abstract shortened by ProQuest.).

  8. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  9. Dual ion beam assisted deposition of biaxially textured template layers

    DOEpatents

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  10. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  11. Ion-beam assisted, electron-beam physical vapor deposition

    SciTech Connect

    Singh, J.

    1996-12-01

    Electron beam-physical vapor deposition (EB-PVD) is a relatively new technology that has overcome some of the difficulties associated with chemical vapor deposition, physical vapor deposition, and thermal spray processes. In the EB-PVD process, focused high-energy electron beams generated from electron guns are directed to melt and evaporate ingots, as well as preheat the substrate inside a vacuum chamber. By adding the assistance of ion beams to the process, coating density and adhesion are improved, while costs are reduced. This article describes physical vapor deposition and ion-beam processes, explains the advantages of EB-PVD, shows how ion beams optimize the benefits of EB-PVD, and enumerates a variety of applications.

  12. Precise Fabrication of Silicon Wafers Using Gas Cluster Ion Beams

    SciTech Connect

    Isogai, Hiromichi; Toyoda, Eiji; Izunome, Koji; Kashima, Kazuhiko; Mashita, Takafumi; Toyoda, Noriaki; Yamada, Isao

    2009-03-10

    Precise surface processing of a silicon wafer was studied by using a gas cluster ion beam (GCIB). The damage caused to the silicon surface was strongly dependent on irradiation parameters. The extent of damage varied with the species of source gas and the acceleration voltage (Va) of cluster ions. It also varied with the cluster size and residual gas pressure. The influence of electron acceleration voltage (Ve) used for ionization of a neutral cluster was also investigated. The irradiation damage, such as an amorphous silicon (a-Si) layer, a mixed layer of a-Si and c-Si (transition layer), and surface roughness, was increased with Ve. It is suggested that the increase in the amount of energy per atom was induced by high Ve, because of variation of the cluster size and/or cluster charge. An undamaged smooth surface can be produced by Ar-GCIB irradiation at low Ve and Va.

  13. Integrated simulations for ion beam assisted fast ignition

    NASA Astrophysics Data System (ADS)

    Sakagami, H.; Johzaki, T.; Sunahara, A.; Nagatomo, H.

    2016-03-01

    Although the energy conversion efficiency from the heating laser to fast electrons is high, the coupling efficiency from fast electrons to the core is estimated to be very low due to large divergence angle of fast electrons in fast ignition experiments at ILE, Osaka University. To mitigate this problem, a plastic thin film or low-density foam, which can generate not only proton (H+) but also carbon (C6+) beams, is combined with currently used cone-guided targets and additional core heating by ions is expected. According to integrated simulations, it is found that these ion beams can enhance the core heating by 20∼60% and it shows a possibility of ion beam assisted fast ignition.

  14. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    NASA Astrophysics Data System (ADS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P. K.; Singkarat, S.; Yu, L. D.

    2012-07-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 1013 and 1 × 1014 ions/cm2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  15. Atomistic simulations of focused ion beam machining of strained silicon

    NASA Astrophysics Data System (ADS)

    Guénolé, J.; Prakash, A.; Bitzek, E.

    2017-09-01

    The focused ion beam (FIB) technique has established itself as an indispensable tool in the material science community, both to analyze samples and to prepare specimens by FIB milling. In combination with digital image correlation (DIC), FIB milling can, furthermore, be used to evaluate intrinsic stresses by monitoring the strain release during milling. The irradiation damage introduced by such milling, however, results in a change in the stress/strain state and elastic properties of the material; changes in the strain state in turn affect the bonding strength, and are hence expected to implicitly influence irradiation damage formation and sputtering. To elucidate this complex interplay between strain, irradiation damage and sputtering, we perform TRIM calculations and molecular dynamics simulations on silicon irradiated by Ga+ ions, with slab and trench-like geometries, whilst simultaneously applying uniaxial tensile and compressive strains up to 4%. In addition we calculate the threshold displacement energy (TDE) and the surface binding energy (SBE) for various strain states. The sputter rate and amount of damage produced in the MD simulations show a clear influence of the strain state. The SBE shows no significant dependence on strain, but is strongly affected by surface reconstructions. The TDE shows a clear strain-dependence, which, however, cannot explain the influence of strain on the extent of the induced irradiation damage or the sputter rate.

  16. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    DTIC Science & Technology

    2007-11-02

    Prepared For: Air Force Wright Aeronautical Lab(WRDC/MLBT), Wright-Patterson AFB,OH 45433 Descriptors, Keywords: ion beam film deposition MoS2 solid...NUMBERS Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films PE - 63224C, 61153N WU -2855, 3409 6. AUTHOR(S) Robert N. Bolster 7... MoS2 ) are effective as solid lubricants. Ion-beam-assisted deposition, which employs ion beam sputtering with an assist beam impinging on the growing

  17. Residual stress control by ion beam assisted deposition

    SciTech Connect

    Was, G.S.; Jones, J.W.; Parfitt, L.; Kalnas, C.E.; Goldiner, M.

    1996-12-31

    The origin of residual stresses were studied in both crystalline metallic films and amorphous oxide films made by ion beam assisted deposition (IBAD). Monolithic films of Al{sub 2}O{sub 3} were deposited during bombardment by Ne, Ar or Kr over a narrow range of energies, E, and a wide range of ion-to-atom arrival rate ratios, R and were characterized in terms of composition, thickness, density, crystallinity, microstructure and residual stress. The stress was a strong function of ion beam parameters and gas content and compares to the behavior of other amorphous compounds such as MoSi{sub x} and WSi{sub 2.2}. With increasing normalized energy (eV/atom), residual stress in crystalline metallic films (Mo, W) increases in the tensile direction before reversing and becoming compressive at high normalized energy. The origin of the stress is most likely due to densification or interstitial generation. Residual stress in amorphous films (Al{sub 2}O{sub 3}, MoSi{sub x} and WSi{sub 2.2}) is initially tensile and monotonically decreases into the compressive region with increasing normalized energy. The amorphous films also incorporate substantially more gas than crystalline films and in the case of Al{sub 2}O{sub 3} are characterized by a high density of voids. Stress due to gas pressure in existing voids explains neither the functional dependence on gas content nor the magnitude of the observed stress. A more likely explanation for the behavior of stress is gas incorporation into the matrix, where the amount of incorporated gas is controlled by trapping.

  18. Ion Beam Synthesis Of Metal - Silicon Carbide - Si Multilayer Structures

    NASA Astrophysics Data System (ADS)

    Lindner, J. K. N.; Tsang, W. M.; Stritzker, B.; Wong, S. P.

    2003-08-01

    High doses of Ti, Ni, Mo, or W ions were implanted at elevated temperatures either conventionally or using a MEVVA ion source into ion beam synthesized Si/SiC/Si or SiC/Si layer structures in order to create metallic layers contacting the SiC. The depth distribution of metal atoms and the formation of silicide and carbide phases as well as the formation of cavities at the lower SiC/Si interface are studied by Rutherford backscattering spectroscopy (RBS) and cross-sectional transmission electron microscopy (XTEM). A brief survey of the effects ocurring in the ion beam metallization of SiC films is given and the benefit of using ion beams for metallization of thin films is elucidated.

  19. Diffusion barriers for silicon carbide particle reinforcements by ion-beam assisted deposition: Effects on interphase stability in silicon carbide(p/beta)-nickel aluminide and silicon carbide(p/gamma)-nickel aluminide composites

    NASA Astrophysics Data System (ADS)

    Cai, Zhiwei

    In this study, aluminum nitride and aluminum oxide films were used as diffusion barriers for SiC particles that were consolidated with beta-NiAl and gamma-Ni3Al matrices at temperatures of 1673 K and 1373 K, respectively. The focus of this study was to understand factors influencing the effectiveness of the diffusion barriers during the consolidation processes of the two composite systems. The barrier films were deposited on SiC particles by ion-beam assisted vacuum evaporation during which the SiC particles were radiantly heated and acoustically levitated. The nitride film formed reactively on SiC particles, and consisted of 95% aluminum nitride (balanced with aluminum nitrate and oxide). The oxygen content in the nitride film was a result of the impingement of residual oxygen and water molecules in the deposition environment. A voided globular structure of fine-grained clusters was found in a nitride film deposited on SiC particles at 593 K, which was attributed to the levitation of the particles and the deposition temperature. Nitride films deposited at a higher temperature of 793 K consisted of a fine-grained dense structure with few voids. The oxide film deposited at room temperature had a fine-grained dense structure with some globular features. This study found that film material affected film's ability of retaining integrity during compositing process, which was important for the success of the barrier films. Annealed at 1673 K, grains in a nitride film (deposited at 793 K) coalesced to an average size of 0.5 mum that was comparable to the film thickness. Grain boundaries in the film were widened by the pore agglomeration, resulting in micro-cracks. The oxide film exhibited a similar phenomenon of uninhibited grain growth and micro-crack formation at a lower temperature of 1273 K. Both films failed to be an effective barrier in SiC/beta-NiAl composite during the compositing process at 1673 K. This study showed the influence of film structure on grain growth

  20. Low energy ion beam assisted growth of metal multilayers

    NASA Astrophysics Data System (ADS)

    Quan, Junjie

    energy, ion species, ion fluence, and ion incidence angle has been investigated during low energy ion assisted vapor deposition of Cu/Co mutilayers. Key mechanisms of atomic reconstruction in the low energy regime have been identified and investigated in detail using a molecular statics method. By changing the ion energy or modifying the time lag between metal and ion deposition, these simulations identified three different approaches for controlling the atomic assembly of multilayer: (i) simultaneous, (ii) modulated energy and (iii) sequential ion assistance. Each has been shown capable of enabling significant interfacial structure control during the growth of metallic multilayers. A biased target ion beam deposition (BTIBD) system was designed and constructed to provide growth environments similar to those that resulted in the best simulated film structures. The BTIBD system has been successfully employed to deposit a variety of multilayers. Experimental investigations of low energy ion assisted growth of a representative spin valve (Ta/NiFe/Co/Cu/Co/FeMn/Cu) multilayer and a model Ta/Cu film indicate significantly improved interfacial structures when oblique, low energy, argon ion assistance was used. These results are fully consistent with the simulations and confirm that a BTIBD approach to multilayer deposition results in substantially improved films compared to those synthesized by traditional ion beam assisted deposition approaches where less effective control of atomic self assembly is possible.

  1. Fabrication of OSOS cells by neutral ion beam sputtering. [Oxide Semiconductor On Silicon solar cells

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, J. R.

    1976-01-01

    Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

  2. Ion-Beam Milling of Silicon Carbide Epitaxial Layers.

    DTIC Science & Technology

    1982-08-04

    Ion milling of photolithographically processed silicon carbide heteroepitaxially grown layers on Si is feasible using an aluminum mask which is produced by standard photolithographic procedures and techniques. (Author)

  3. Ion-beam induced atomic mixing in isotopically controlled silicon multilayers

    NASA Astrophysics Data System (ADS)

    Radek, M.; Bracht, H.; Liedke, B.; Böttger, R.; Posselt, M.

    2016-11-01

    Implantation of germanium (Ge), gallium (Ga), and arsenic (As) into crystalline and preamorphized isotopically controlled silicon (Si) multilayer structures at temperatures between 153 K and 973 K was performed to study the mechanisms mediating ion-beam induced atomic mixing. Secondary-ion-mass-spectrometry was applied to determine concentration-depth profiles of the stable isotopes before and after ion implantation. The intermixing is analytically described by a depth-dependent displacement function. The maximum displacement is found to depend not only on temperature and microstructure but also on the doping type of the implanted ion. Molecular dynamics calculations evaluate the contribution of cascade mixing, i.e., thermal-spike mixing, to the overall observed atomic mixing. Calculated and experimental results on the temperature dependence of ion-beam mixing in the amorphous and crystalline structures provide strong evidence for ion-beam induced enhanced crystallization and enhanced self-diffusion, respectively. On the other hand, the former process is confirmed by channeling Rutherford backscattering analyses of the amorphous layer thickness remaining after implantation, the latter process is consistently attributed to the formation of highly mobile Si di-interstitials formed under irradiation and in the course of damage annealing. The observed ion-beam mixing in Si is compared to recent results on ion-beam mixing of Ge isotope multilayers that, in contrast to Si, are fully described by thermal-spike mixing only.

  4. Ion-beam assisted laser printing of porous nanorings

    NASA Astrophysics Data System (ADS)

    Syubaev, S.; Kuchmizhak, A.; Nepomnyashchiy, A.

    2017-09-01

    Pulsed-laser fabrication of noble-metal nanorings with a tunable internal porous structure, which can be further uncapped by using an ion-beam etching procedure, was demonstrated for the first time. Density and average size of the pores were shown to be tuned in a wide range by varying an applied pulse energy and a chemical composition of the metal film controlled via the film magnetron deposition in the appropriate gaseous environment. According to our preliminary numerical simulations, the controlled porosity provides multifold near-field enhancement of the electromagnetic fields, making such structures promising for spectroscopic bioidentification based on a surface-enhanced Raman scattering.

  5. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    SciTech Connect

    Wang, Dandan Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  6. Helium ion beam enhanced local etching of silicon nitride

    SciTech Connect

    Petrov, Yu. V. Sharov, T. V.; Baraban, A. P.

    2016-06-17

    We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 10{sup 14} cm{sup −2} to 10{sup 17} cm{sup −2} was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.

  7. Method for forming metallic silicide films on silicon substrates by ion beam deposition

    DOEpatents

    Zuhr, Raymond A.; Holland, Orin W.

    1990-01-01

    Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

  8. Ion beam induced charge characterisation of a silicon microdosimeter using a heavy ion microprobe

    NASA Astrophysics Data System (ADS)

    Cornelius, Iwan; Siegele, Rainer; Rosenfeld, Anatoly B.; Cohen, David D.

    2002-05-01

    An ion beam induced charge (IBIC) facility has been added to the existing capabilities of the ANSTO heavy ion microprobe and the results of the first measurements are presented. Silicon on insulator (SOI) diode arrays with microscopic junction sizes have recently been proposed as microdosimeters for hadron therapy. A 20 MeV carbon beam was used to perform IBIC imaging of a 10 μm thick SOI device.

  9. Optimization of ultrafast laser generated low-energy ion beams from silicon targets

    SciTech Connect

    Stoian, R.; Mermillod-Blondin, A.; Bulgakova, N.M.; Rosenfeld, A.; Hertel, I.V.; Spyridaki, M.; Koudoumas, E.; Tzanetakis, P.; Fotakis, C.

    2005-09-19

    We demonstrate the possibility to manipulate the kinetic properties of ion beams generated by ultrafast laser ablation of silicon. The versatility in regulating the sub-keV ion flux is achieved by implementing adaptive control of the temporal shape of incident laser pulses. Tunable characteristics for the charged beams are obtained using excitation synchronized with the phase-transformation dynamics, exploiting transitions to volatile fluid states with minimal energetic expenses.

  10. Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

    NASA Astrophysics Data System (ADS)

    Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Yamamoto, Hideki; Kumakura, Kazuhide

    2017-03-01

    Cubic boron nitride (c-BN) films were grown on diamond (001) substrates by a new ion-beam-assisted molecular-beam-epitaxy (MBE) method with the irradiation of Ar+ ions and atomic nitrogen radicals (N*). From X-ray diffraction and cross-sectional transmission electron microscopy images, we confirmed the heteroepitaxial growth of single-domain c-BN(001) films on the diamond (001) substrates. Additionally, we revealed the growth phase diagram of BN films in the ion-beam-assisted MBE. This diagram indicates that the flux intensity of Ar+ ions should be higher than that of boron atoms for epitaxial c-BN growth.

  11. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    DTIC Science & Technology

    1992-09-11

    Naval Research Laboratory AD-A255 222 Dunon C 203MU32 tID~li ___ NR1JMR6176-02-nM3 Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films...unlimited.J 13. ABSTRACT (fxMmrn, 200 iw~tds Vacuum-deposited films of molybdenum disulfide ( MoS2 ) ame effective as solid lubricants. Ion-beam...optimized and the assist beamn ion flux was quantified and found to follow a power-law relationship with beam power. The beat way to produce MoS2 films was

  12. Surface morphology evolution in silicon during ion beam processing

    SciTech Connect

    Bedrossian P; Caturla, M; Diaz de la Rubia, T; Johnson, M

    1999-08-01

    The Semiconductor Industry Association (SIA) projects that the semiconductor chips used in personal computers and scientific workstations will reach five times the speed and ten times the memory capacity of the current pentium-class processor by the year 2007. However, 1 GHz on-chip clock speeds and 64 Gbits/Chip DRAM technology will not come easy and without a price. Such technologies will require scaling the minimum feature size of CMOS devices (the transistors in the silicon chip) down to below 100nm from the current 180 to 250 nm. This requirement has profound implications for device manufacturing. Existing processing techniques must increasingly be understood quantitatively and modeled with unprecedented precision. Indeed, revolutionary advances in the development of physics-based process simulation tools will be required to achieve the goals for cost efficient manufacturing, and to satisfy the needs of the defense industrial base. These advances will necessitate a fundamental improvement in our basic understanding of microstructure evolution during processing. In order to cut development time and costs, the semiconductor industry makes extensive use of simple models of dopant implantation, and of phenomenological models of defect annealing and diffusion. However, the production of a single device often requires more than 200 processing steps, and the cumulative effects of the various steps are far too complex to be treated with these models. The lack of accurate process modeling simulators is proving to be a serious impediment to the development of next generation devices. New atomic-level models are required to describe the point defect distributions produced by the implantation process, and the defect and dopant diffusion resulting from rapid thermal annealing steps. In this LDRD project, we investigated the migration kinetics of defects and dopants in silicon both experimentally and theoretically to provide a fundamental database for use in the development

  13. Oxidation-resistant coatings on titanium alloys by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Bedell, C. J.; Bishop, H. E.; Dearnaley, G.; Desport, J. E.; Romary, H.; Romary, J.-M.

    1991-07-01

    The high strength and creep resistance of modern titanium alloys makes them potentially attractive for aero engine compressor blades operating at temperatures above 500° C, to improve thermal efficiency and performance. However, all these alloys suffer from oxidation at such elevated temperatures and the in-diffusing oxygen stabilizes the more brittle alpha-phase of the alloy making it prone to crack under stress. There is thus a need for protective highly adherent coatings. In the present work, chromium was deposited with simultaneous ion bombardment using 60 keV nitrogen ions, to a thickness of 1 μm. Ion assisted deposition provides excellent adhesion and a very compact, pore-free coating with a small grain size. However, at high temperatures titanium diffuses into the chromium and impairs its protectiveness. To combat this, a diffusion barrier of silicon nitride was deposited first, by evaporating silicon and matching the rate of arrival of Si atoms with a 0.5 keV nitrogen ion beam from a Kaufman source to produce Si 3N 4 to thicknesses from 0.1 to 0.3 μm. As an added protection, in some experiments an overlay coating of about 0.3 μm of silicon nitride was deposited after the chromium layer. Oxidation was carried out in air at temperatures between 600 and 800° C and for periods up to 100 h. Subsequent analysis by SIMS showed excellent protection up to at least 700° C but diffusion across the barrier occurred at 800° C. Titanium nitride was less successful than silicon nitride for barrier purposes.

  14. Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

    SciTech Connect

    Erdmanis, M. Tittonen, I.

    2014-02-17

    Nanofabrication techniques providing a fine control over the profile of silicon structures are of great importance for nanophotonics, plasmonics, sensing, micro- and nano fluidics, and biomedical applications. We report on the applicability of focused ion beam for the fine grayscale lithography, which yields surface profiles that are customized at nanoscale. The approach is based on a correlation between the ion beam irradiation dose of inorganic resist and the mask etching rate in the reactive ion etching. An exceptional property of this method is the number of gray tones that are not limited by the resist characteristics. We apply the process to fabricate unique periodic nanostructures with a slope angle varying across the structure and a period as small as 200 nm.

  15. Iodine enhanced focused-ion-beam etching of silicon for photonic applications

    SciTech Connect

    Schrauwen, Jonathan; Thourhout, Dries van; Baets, Roel

    2007-11-15

    Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices impractical when the optical mode is confined near the etched region. These losses are shown to be reduced by the local implantation and etching of silicon waveguides with iodine gas enhancement, followed by baking at 300 deg. C. The excess optical loss in the silicon waveguides drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after baking at 300 deg. C. We present elemental and chemical surface analyses supporting that this is caused by the desorption of iodine from the silicon surface. Finally we present a model to extract the absorption coefficient from the measurements.

  16. Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques

    SciTech Connect

    Friedrich, F. Herfurth, N.; Teodoreanu, A.-M.; Boit, C.

    2014-06-16

    Micron-sized, periodic crystalline Silicon columns on glass substrate were electrically contacted with a transparent conductive oxide front contact and a focused ion beam processed local back contact. Individual column contacts as well as arrays of >100 contacted columns were processed. Current-voltage characteristics of the devices were determined. By comparison with characteristics obtained from adapted device simulation, the absorber defect density was reconstructed. The contacting scheme allows the fabrication of testing devices in order to evaluate the electronic potential of promising semiconductor microstructures.

  17. Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

    NASA Astrophysics Data System (ADS)

    Ahmad, Z.; Ahmad, M.; Al-Hawat, Sh.; Akel, M.

    2017-04-01

    Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

  18. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    NASA Astrophysics Data System (ADS)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  19. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography.

    PubMed

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-24

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga(+) ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  20. Self-organized microstructures induced by MeV ion beam on silicon surface

    NASA Astrophysics Data System (ADS)

    Ahmad, Muthanna

    2017-02-01

    Micro patterning of self organized structure on silicon surface is induced by ion implantation of energetic (MeV) copper ions. This work reports for the first time the ability of using energetic ions for producing highly ordered ripples and dots of micro sizes. The experiments are realized at the Tandem ion beam accelerator (3 MV) at the IBA laboratory of the Atomic Energy Commission of Syria. Similarly to nano patterning formed by slow ions, the formation of micro patterned structures dots and ripples is observed to be depending on the angle of ion beam incidence, energy and ion fluence. The observation of such microstructures formation is limited to a range of ion energies (few MeV) at fluence higher than 1.75 × 1017 ion cm-2. The patterned surface layer is completely amorphousized by the ion implantation. Shadowing effect is observed in the formation of microripples and superstructures in the top of ripples. The superstructure develops new morphology that is not observed before. This morphology has butterfly shape with symmetry in its structure.

  1. Fabrication of Superconducting Mo/Cu Bilayers Using Ion-Beam-Assisted e-Beam Evaporation

    NASA Astrophysics Data System (ADS)

    Jaeckel, Felix T.; Kripps, Kari L.; Morgan, Kelsey M.; Zhang, Shuo; McCammon, Dan

    2016-08-01

    Superconducting/normal metal bilayers with tunable transition temperature are a critical ingredient to the fabrication of high-performance transition edge sensors. Popular material choices include Mo/Au and Mo/Cu, which exhibit good environmental stability and provide low resistivity films to achieve adequate thermal conductivity. The deposition of high-quality Mo films requires sufficient adatom mobility, which can be provided by energetic ions in sputter deposition or by heating the substrate in an e-beam evaporation process. The bilayer T_c depends sensitively on the exact deposition conditions of the Mo layer and the superconducting/normal metal interface. Because the individual contributions (strain, crystalline structure, contamination) are difficult to disentangle and control, reproducibility remains a challenge. Recently, we have demonstrated that low-energy ion-beam-assisted e-beam evaporation offers an alternative route to reliably produce high-quality Mo films without the use of substrate heating. The energy and momentum delivered by the ion beam provides an additional control knob to tune film properties such as resistivity and stress. In this report we describe modifications made to the commercial end-Hall ion source to avoid iron contamination allowing us to produce superconducting Mo films. We show that the ion beam is effective at enhancing the bilayer interface transparency and that bilayers can be further tuned towards reduced T_c and higher conductivity by vacuum annealing.

  2. Formation and destruction of cube texture in MgO films using ion beam assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hühne, Ruben; Beyer, Christoph; Holzapfel, Bernhard; Oertel, Carl-Georg; Schultz, Ludwig; Skrotzki, Werner

    2001-07-01

    Biaxially textured MgO thin films were deposited on amorphous substrates using ion beam assisted pulsed laser deposition. The development of the texture and microstructure was investigated with electron diffraction and atomic force microscopy. After the first few nanometers of growth, a sharp nucleation texture is observed. During further growth a texture change takes place, leading to two texture components, one in the <220> direction and the other in the <111> direction parallel to the substrate normal. In both cases the <200> direction is parallel to the ion beam. This texture change can be explained in terms of the highly anisotropic sputter rate observed in experiments on single crystals, leading to grains having a <200> direction parallel to the ion beam during growth being preferred. Without ion beam assistance during further growth, one of the two texture components dominates.

  3. Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

    DOE PAGES

    Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward; ...

    2015-12-01

    In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

  4. Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

    SciTech Connect

    Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward; Vizkelethy, Gyorgy; Abraham, John B. S.; Doyle, Barney L.

    2015-12-01

    In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

  5. Thermal stability of AlN films prepared by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Meng, Jian-ping; Liu, Xiao-peng; Fu, Zhi-qiang; Wang, Xiao-jing; Hao, Lei

    2015-08-01

    The thermal stability of AlN films deposited by ion beam assisted deposition was performed at 600 °C for 192 h under air ambient. The composition, morphology and optical properties were studied by X-ray photoelectron spectrometer, transmission electron microscopy, scanning electron microscopy, spectroscopic ellipsometry and UV-vis spectroscopy. The results show that the deposited film is polycrystalline, smooth, dense and homogenous. The oxidation of grain boundary takes place due to the element diffusion in the polycrystalline material. Oxidation produces amorphous oxide layers on the surface of film. As annealing time increases, surface roughness and diffuse reflection increase. Annealing has little influence on refractive index and extinction coefficient.

  6. Influence of ion beam assisted deposition parameters on the growth of MgO and CoFeB

    SciTech Connect

    Ferreira, Ricardo; Freitas, Paulo P.; Petrova, Rumyana; McVitie, Stephen

    2012-04-01

    The effect of the kinetic parameters of an assistance ion beam on the crystallization of ion beam deposited MgO was investigated. It is shown that the crystallization of MgO in the as-deposited state is strongly dependent on the assistance beam parameters. Furthermore, two deposition regimes corresponding to different ranges of the assistance beam energy are found. XRD and TEM studies of CoFeB/MgO/CoFeB with MgO deposited in the two regimes show that CoFeB crystallization is favored when low energy assist beams are used, despite no differences being found in the MgO.

  7. Silicon ion irradiation effects on the magnetic properties of ion beam synthesized CoPt phase

    SciTech Connect

    Balaji, S.; Amirthapandian, S.; Panigrahi, B. K.; Mangamma, G.; Kalavathi, S.; Gupta, Ajay; Nair, K. G. M.

    2012-06-05

    Ion beam mixing of Pt/Co bilayers using self ion (Pt{sup +}) beam results in formation of CoPt phase. Upon ion beam annealing the ion mixed samples using 4 MeV Si{sup +} ions at 300 deg. C, diffusion of Co towards the Pt/Co interface is observed. The Si{sup +} ion beam rotates the magnetization of the CoPt phase from in plane to out of plane of the film.

  8. Titanium-dioxide film formation using gas cluster ion beam assisted deposition technique

    NASA Astrophysics Data System (ADS)

    Nakatsu, O.; Matsuo, J.; Omoto, K.; Seki, T.; Takaoka, G.; Yamada, I.

    2003-05-01

    Gas cluster ion beam (GCIB) assisted deposition technique has been applied to form titanium-dioxide films. When oxygen cluster ions collide on solid surfaces, oxygen molecules in the clusters enhance oxidation due to high density energy deposition. Metal titanium pellets were used as source material for EB evaporation, because evaporation with metal pellets is much stable than that of oxide pellets. Films were deposited on sapphire (0 0 0 1) substrates with various conditions. Characteristics of the films were examined by use of XRD, RBS and AFM. When film was deposited with the acceleration voltage of 7 kV at 473 K, the well c-oriented rutile TiO 2 film was formed with average roughness of 0.4 nm. Without assistance of GCIB rough amorphous film was formed in an atmosphere of oxygen. Very smooth surface films with good crystallinity were formed by GCIB assisted deposition technique.

  9. 3D silicon shapes through bulk nano structuration by focused ion beam implantation and wet etching.

    PubMed

    Salhi, Billel; Troadec, David; Boukherroub, Rabah

    2017-05-19

    The work presented in this paper concerns the synthesis of silicon (Si) 2D and 3D nanostructures using the delayed effect, caused by implanted Ga ions, on the dissolution of Si in aqueous solutions of tetramethylammonium hydroxide (TMAH). The crystalline silicon substrates (100) are first cleaned and then hydrogenated by immersion in an aqueous solution of hydrofluoric acid. The ion implantation is then carried out by a focused ion beam by varying the dose and the exposure time. Chemical etching in aqueous solutions of TMAH at 80 °C leads to the selective dissolution of the Si planes not exposed to the ions. The preliminary results obtained in the laboratory made it possible to optimize the experimental conditions for the synthesis of 2D and 3D nanoobjects of controlled shape and size. Analysis by transmission electron microscopy and energy dispersive x-ray showed the amorphous nature of the nanostructures obtained and the presence of 5%-20% Ga in these nanoobjects. The first experiments of recrystallization by rapid thermal annealing allowed to reconstitute the crystal structure of these nanoobjects.

  10. Ion-beam sputtered amorphous silicon films for cryogenic precision measurement systems

    NASA Astrophysics Data System (ADS)

    Murray, Peter G.; Martin, Iain W.; Craig, Kieran; Hough, James; Robie, Raymond; Rowan, Sheila; Abernathy, Matt R.; Pershing, Teal; Penn, Steven

    2015-09-01

    Thermal noise resulting from the mechanical loss of multilayer dielectric coatings is expected to impose a limit to the sensitivities of precision measurement systems used in fundamental and applied science. In the case of gravitational wave astronomy, future interferometric gravitational wave detectors are likely to operate at cryogenic temperatures to reduce such thermal noise and ameliorate thermal loading effects, with the desirable thermomechanical properties of silicon making it an attractive mirror substrate choice for this purpose. For use in such a precision instrument, appropriate coatings of low thermal noise are essential. Amorphous silicon (a -Si ) deposited by e-beam and other techniques has been shown to have low mechanical loss. However, to date, the levels of mechanical and optical loss for a -Si when deposited by ion-beam sputtering (the technique required to produce amorphous mirrors of the specification for gravitational wave detector mirrors) are unknown. In this paper results from measurements of the mechanical loss of a series of IBS a -Si films are presented which show that reductions are possible in coating thermal noise of a factor of 1.5 at 120 K and 2.1 at 20 K over the current best IBS coatings (alternating stacks of silica and titania-doped tantala), with further reductions feasible under appropriate heat treatments.

  11. ALLIGATOR - An apparatus for ion beam assisted deposition with a broad-beam ion source

    NASA Astrophysics Data System (ADS)

    Wituschek, H.; Barth, M.; Ensinger, W.; Frech, G.; Rück, D. M.; Leible, K. D.; Wolf, G. K.

    1992-04-01

    Ion beam assisted deposition is a versatile technique for preparing thin films and coatings for various applications. Up to now a prototype setup for research purposes has been used in our laboratory. Processing of industrial standard workpieces requires a high current ion source with broad beam and high uniformity for homogeneous bombardment. In this contribution a new apparatus for large area samples will be described. It is named ALLIGATOR (German acronym of facility for ion assisted evaporation on transverse movable or rotary targets). In order to have a wide energy range available two ion sources are used. One delivers a beam energy up to 1.3 keV. The other is suitable for energies from 5 keV up to 40 keV. The ``high-energy'' ion source is a multicusp multiaperture source with 180-mA total current and a beam diameter of 280 mm at the target position.

  12. Two-dimensional silicon-based detectors for ion beam therapy

    NASA Astrophysics Data System (ADS)

    Martišíková, M.; Granja, C.; Jakůbek, J.; Hartmann, B.; Telsemeyer, J.; Huber, L.; Brons, S.; Pospíšil, S.; Jäkel, O.

    2012-02-01

    Radiation therapy with ion beams is a highly precise kind of cancer treatment. As ion beams traverse material, the highest ionization density occurs at the end of their path. Due to this Bragg-peak, ion beams enable higher dose conformation to the tumor and increased sparing of the surrounding tissue, in comparison to standard radiation therapy using high energy photons. Ions heavier than protons offer in addition increased biological effectiveness and lower scattering. The Heidelberg Ion Beam Therapy Center (HIT) is a state-of-the-art ion beam therapy facility and the first hospital-based facility in Europe. It provides proton and carbon ion treatments. A synchrotron is used for ion acceleration. For dose delivery to the patient, narrow pencil-like beams are scanned over the target volume.

  13. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  14. Effect of ion beam etching on the surface roughness of bare and silicon covered beryllium

    NASA Astrophysics Data System (ADS)

    Chkhalo, N. I.; Mikhaylenko, M. S.; Mil'kov, A. V.; Pestov, A. E.; Polkovnikov, V. N.; Salashchenko, N. N.; Strulya, I. L.; Zorina, M. V.; Zuev, S. Yu.

    2017-05-01

    In the paper is studied the main aspects of using ion-beam etching for finish polishing. It is found that 400 eV is the optimal energy for neon ion etching ensuring slight surface roughness smoothing in the range of incidence angles of +/- 40°. The deposition of 200 nm amorphous silicon films onto beryllium and their subsequent etching with the 800 eV argon ions improve the effective surface roughness integrated across the range of the spatial frequencies of 0.025-60 μm-1, from σeff=1.37 nm down to σeff=0.29 nm. The effectiveness of the smoothing technology for x-ray applications, confirmed by the results of the study the reflective properties of the Mo/Si mirrors deposited on the substrate. The reflectivity at a wavelength of 13.5 nm increased from 2% for the substrates with the surface roughness of σeff=2.3 nm (the roughness value corresponds to the as-prepared bulk Be substrates and is taken from the literature) up to 67.5% after the smoothing technology.

  15. Optical Properties of dual ion beam sputtered Indium Tin Oxide films on glass and Silicon

    NASA Astrophysics Data System (ADS)

    Simpson, Nelson; Geerts, Wilhelmus; Bandyopadhyay, Anup

    2012-03-01

    Indium Tin Oxide (ITO) is a transparent conducting material that finds application in flat panel displays, solar cells, and photodetectors. High quality ITO films, i.e. films with a large transparency and a high conductivity, are normally deposited above room temperature often at 300-400 C. This high deposition temperature eliminates most plastics as substrates. To lower the substrate deposition temperature we are applying atomic instead of molecular oxygen during the sputtering process. A dual ion beam sputtering system (DIBS) has been modified to allow the substrate to be exposed to an atomic oxygen beam at 45 degrees angle of incidence. Thin films were sputtered as a function of atomic oxygen flux and substrate temperature on glass, silicon, and sapphire substrates. The optical properties were measured by spectroscopic ellipsometry, reflectometry, and FTIR. Film thickness and bandgap were determined from the optical properties in the visible part of the spectrum. Mobility was determined from the infrared part of the spectruam. Optical properties appear to vary with the film thickness, the oxygen flux, and the substrate temperature. Roughness of the samples was independently measured by AFM. This work is supported by a grant from research corporation (10775).

  16. Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon

    SciTech Connect

    Beardmore, K.M.; Gronbech-Jensen, N.

    1999-05-02

    Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon to high dose ion-irradiation. The authors employ a realistic model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. The authors find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, the authors observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. The authors note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between the different densities of the amorphous samples. For any reasonable deformation rate, the authors observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in a denser structure relative to crystalline Si. The authors conclude that although there is substantial agreement between experimental measurements and simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally the authors show that annealing simulations of their amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in a-Si are analogous to those in c-Si.

  17. Mechanical behaviour of metallic thin films on polymeric substrates and the effect of ion beam assistance on crack propagation

    SciTech Connect

    George, M. , E-Mail: matthieu.george@bnfl.com; Coupeau, C.; Colin, J.; Grilhe, J.

    2005-01-10

    The mechanisms of crack propagation in metallic films on polymeric substrates have been studied through in situ atomic force microscopy observations of thin films under tensile stresses and finite element stress calculations. Two series of films - ones deposited with ion beam assistance, the others without - have been investigated. The observations and stress calculations show that ion beam assistance can change drastically the propagation of cracks in coated materials: by improving the adhesion film/substrate, it slows down the delamination process, but in the same time enhances the cracks growth in the thickness of the material.

  18. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Jiang, Weilin; Qiang, You; Burks, Edward; Liu, Kai; Namavar, Fereydoon; Mccloy, John S.

    2014-11-03

    Iron oxide films were deposited onto Si substrates using ion-beam-assisted deposition. The films were ~300 nm thick polycrystalline magnetite with an average crystallite size of ~6 nm. Additionally, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite. However, Raman spectroscopy and x-ray diffraction both indicate that the films are single-phase magnetite. Since no direct evidence of a second phase could be found, exchange bias likely arises due to defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples have such small grains, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field. The high energy deposition process results in an oxygen-rich, argon-containing magnetite film with low temperature exchange bias due to defects at the high concentration of grain boundaries.

  19. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Qiang, You; Jiang, Weilin; Burks, Edward C.; Liu, Kai; Namavar, Fereydoon; McCloy, John S.

    2014-11-07

    Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples contain grains ∼6 nm, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field.

  20. Ion mass and energy selective hyperthermal ion-beam assisted deposition setup

    NASA Astrophysics Data System (ADS)

    Gerlach, J. W.; Schumacher, P.; Mensing, M.; Rauschenbach, S.; Cermak, I.; Rauschenbach, B.

    2017-06-01

    For the synthesis of high-quality thin films, ion-beam assisted deposition (IBAD) is a frequently used technique providing precise control over several substantial film properties. IBAD typically relies on the use of a broad-beam ion source. Such ion sources suffer from the limitation that they deliver a blend of ions with different ion masses, each of them possessing a certain distribution of kinetic energy. In this paper, a compact experimental setup is presented that enables the separate control of ion mass and ion kinetic energy in the region of hyperthermal energies (few 1 eV - few 100 eV). This ion energy region is of increasing interest not only for ion-assisted film growth but also for the wide field of preparative mass spectrometry. The setup consists of a constricted glow-discharge plasma beam source and a tailor-made, compact quadrupole system equipped with entry and exit ion optics. It is demonstrated that the separation of monoatomic and polyatomic nitrogen ions (N+ and N2+) is accomplished. For both ion species, the kinetic energy is shown to be selectable in the region of hyperthermal energies. At the sample position, ion current densities are found to be in the order of 1 μA/cm2 and the full width at half maximum of the ion beam profile is in the order of 10 mm. Thus, the requirements for homogeneous deposition processes in sufficiently short periods of time are fulfilled. Finally, employing the described setup, for the first time in practice epitaxial GaN films were deposited. This opens up the opportunity to fundamentally study the influence of the simultaneous irradiation with hyperthermal ions on the thin film growth in IBAD processes and to increase the flexibility of the technique.

  1. Chemical and thermodynamic influences in ion beam assisted thin film synthesis

    NASA Astrophysics Data System (ADS)

    Ensinger, W.

    1994-02-01

    The main parameter of ion beam assisted deposition of compound films is the ratio γ of impacting ions to condensing atoms. It determines the energy input into the growing film and influences the composition of the film. When highly reactive elements such as transition metals are involved in the process, the elemental composition of the film may also be influenced by the presence of reactive gas molecules, and their partial pressure in the vacuum system. The corresponding process parameter is the ratio δ of impinging gas molecules to condensing atoms. In this case, the final phase and elemental composition of the film is strongly affected by chemical and thermodynamic influences. This is shown by a comparison of ion beam assisted deposition of TiN, VN and CrN. The according metal was evaporated and the growing film irradiated with energetic nitrogen ions. The physical process parameters such as evaporation rate, ion current density and ion energy were the same for all three elements. X-ray phase analysis shows that, whereas it is easily possible to synthesize TiN over a wide range of γ-values, CrN requires a very high irradiation intensity or high γ-value to be deposited as a monophase. VN is intermediate in its behaviour between TiN and CrN. This result is in accordance with the reactivity of the metals towards nitrogen gas and the thermodynamic stability of the resulting nitride. It shows that besides the physical parameters of the process chemical driving forces also play an important role.

  2. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    PubMed

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  3. Influence of metal co-deposition on silicon nanodot patterning dynamics during ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Gago, R.; Redondo-Cubero, A.; Palomares, F. J.; Vázquez, L.

    2014-10-01

    We address the impact of metal co-deposition in the nanodot patterning dynamics of Si(100) surfaces under normal-incidence 1 keV Ar+ ion-beam sputtering (IBS). In particular, the effect of both the metal nature (Fe or Mo) and flux has been studied. Morphological and compositional evolution were followed by atomic force microscopy (AFM) and Rutherford backscattering spectrometry, respectively. For the same type of impurity, the dynamics is faster for a higher co-deposition flux, which also drives to larger asymptotic roughness and wavelength. Mo co-deposition yields rougher surfaces for a lower metal coverage than Fe and, remarkably, higher ordered patterns. X-ray photoelectron spectroscopy reveals the formation of silicide bonds even before pattern onset, stressing the relevant role of the affinity of the co-deposited metals for silicon. Further, current-sensing AFM performed at the initial and asymptotic stages indicates that the nanodot structures are metal-rich, resulting in coupled compositional and morphological patterns. These results are discussed in terms of phase segregation, morphology-driven local flux variations of impurities and silicide formation. This analysis reveals that the underlying (concurrent) mechanisms of pattern formation are complex since many processes can come into play with a different relative weight depending on the specific patterning conditions. From a practical point of view, it is shown that, by proper selection of the process parameters, IBS with metal co-deposition can be used to tune the dynamics and pattern properties and, interestingly, to produce highly ordered arrays.

  4. Nonpropulsive applications of ion beams

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications.

  5. The microstructure and tribological properties of ion beam assisted Cd-O and Ti-O coatings

    NASA Astrophysics Data System (ADS)

    Rai, A. K.; Bhattacharya, Rabi S.; Yust, C. S.; DeVore, C. E.

    1991-07-01

    The microstructural and tribological properties of Cd-O and Ti-O films obtained by ion beam assisted deposition (IBAD) technique were studied. The IBAD process involved direct electron (e) beam evaporation of CdO and TiO 2 while simultaneously bombarding with 500 eV O 2+ ions. Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM) were used to determine the composition and microstructure of the films. A pin-on-disc tribotester was employed to determine the friction and wear characteristics of selected coatings. Ti-O films, with and without ion beams, were found to be amorphous while Cd-O films were polycrystalline under similar conditions. The oxygen-to-metal ratios in Ti-O and Cd-O films were ˜ 2.2 and ˜ 0.79, respectively. A reduction in friction and wear of M50 steel coated with ion beam assisted Ti-O film was observed. Ion beam assisted Cd-O film on M50 showed high friction at room temperature but lower friction at 400° C.

  6. Mechanical properties and thermal stability of TiAlN/Ta multilayer film deposited by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Shang, Hongfei; Li, Jian; Shao, Tianmin

    2014-08-01

    TiAlN/Ta multilayer film with the total thickness of 2 μm was deposited onto silicon (1 0 0) wafer by ion beam assisted deposition using Ti0.5Al0.5 and Ta as the target materials. Observation of the cross-sectional microstructure and XRD pattern showed that the Ta sub-layer restrained the growth of TiAlN crystal, and decreased the grain size. Nanohardness (H) of the TiAlN/Ta multilayer film was 29% higher and the elastic modulus (E) was 47% higher than that of the TiAlN monolayer film. The critical fracture load (Lc) of 72 mN for the TiAlN/Ta multilayer film was achieved, much higher than that of the monolayer TiAlN film (30 mN), indicated a significant increase of bonding strength. Results of DSC analysis indicated that the TiAlN/Ta multilayer film had the exothermic peak at around 935 °C, 75 °C above that for the TiAlN monolayer film. Existence of the Ta sub-layers behaved as the barrier layers to prevent oxygen from diffusing into inner layers, resulted in the improvement of thermal stability.

  7. Raman and photoluminescence study of ion beam irradiated porous silicon: a case for the astrophysical extended red emission?

    NASA Astrophysics Data System (ADS)

    Baratta, G. A.; Strazzulla, G.; Compagnini, G.; Longo, P.

    2004-03-01

    We have measured photoluminescence (PL) and Raman spectra of porous silicon (PS) thin films subjected to irradiation with 30 keV He+ ion beams. Fluence has been changed between 1014 and 1016 ions/cm2. The results show a decrease of the photoluminescence intensity by increasing the ion fluence, probably due to the formation of induced non-radiative recombination centres. The increase of defects density and the partial amorphization of the samples have been studied through Raman spectroscopy and a comparison with the induced damage in single-crystalline silicon has been considered. The characteristic PL wavelength (600-800 nm) supports the hypothesis that silicon nanostructures are an attractive carrier for the so called "Extended Red Emission" (ERE) observed in many astronomical objects. However, the possibility to tune the PL quantum efficiency by ion irradiation indicates that silicon nanostructures in space could loss their photoluminescence capability in those environments where cosmic ion bombardment plays a relevant role.

  8. Ion beam assisted deposition of MgO barriers for magnetic tunnel junctions

    SciTech Connect

    Cardoso, S.; Macedo, R. J.; Ferreira, R.; Augusto, A.; Wisniowski, P.; Freitas, P. P.

    2008-04-01

    This work reports for the first time results on MgO tunnel junctions prepared by ion beam. The MgO barrier was deposited from a ceramic MgO target using an assisted beam, following the deposition and assisted beam phase diagram which relate the beam profile with the current and energy. The deposition rate for MgO is calculated with and without assisted beam, and compared with the experimental values. The MgO film growth on Ta/CoFeB/MgO simple stacks was optimized aiming at a (002) preferred orientation for the MgO growth, measured by x-ray diffraction. The optimum assist beam energy was tuned for each deposition beam condition (+800,+1000,+1200 V), using assist beams of 40 mA ({approx}130 {mu}A/cm{sup 2}) with 0 to +600 V. Without assist beam, no texture is observed for the MgO, while the (002) orientation appears for assisted deposition. The optimum range of assist voltages is large, being limited by the onset of etching at high voltages, reducing the deposition rate. Magnetic tunnel junctions were deposited with the structure Ta 50 A/Ru 200 A/Ta 50 A/Mn{sub 78}Ir{sub 22} 150 A/Co{sub 90}Fe{sub 10} 30 A/Ru 8 A/Co{sub 56}Fe{sub 24}B{sub 20} 40 A/MgO t/Co{sub 56}Fe{sub 24}B{sub 20} 30 A/Ru 30 A/Ta 50 A, with the MgO barrier deposited with the conditions optimized by x rays. The effect of the assist beam energy on the junction properties (magnetoresistance and magnetization) are discussed. Tunnel magnetoresistance values up to 110%, with RA products of 100-400 {omega} {mu}m{sup 2}, for 11 A thick MgO barriers are obtained using assisted deposition with a +100 V assist beam, which is a major improvement of the {approx}30% of TMR, if no beam is used.

  9. Mechanisms for Orientation in Low Energy Ion Beam Assisted TiAlN Thin Film Growth

    NASA Astrophysics Data System (ADS)

    Aliotta, Paul V.

    The effects of off-normal ionized vapor bombardment on the orientation and structure of off-normal sputter deposited TiAlN thin films has been investigated with the goal of better understanding the mechanistic pathways in ion beam assisted thin film growth for better control of film properties during deposition. The effects of incident angle for ion bombardment has been investigated as a potential variable during deposition and a comprehensive comparison to current theories of thin film orientation development has been made. It is shown that for low levels of ion energies and rates, films develop (220) orientation with a near amorphous zone 1 (Z1) morphology for low ion incident angles. As the rates and energies of ions increases, (111) orientation and fibrous transition zone (ZT) morphology develops. It is also seen that as the angle of ion bombardment increases the threshold level for rates and energies of ions to cause (111) orientation and ZT morphologies is reduced. This change in orientation and morphology has been shown to change in-situ according to the level of ion bombardment making this transition a potential tool for developing microstructures within thin films. Commonly accepted theories of thin film orientation have been investigated with respect to the development of (111) orientation for low energy ion beam assisted deposition including surface energy reduction, thermal influences, strain energy reduction, ion channeling, and ion damage anisotropy though such mechanisms were not successful in describing the development of (111) orientation. Atomic subplantation, generally regarded as a mechanism for bond formation in diamond-like carbon films, has also been investigated as a potential mechanism for orientation development. By treating the interaction of ions with the depositing film as a collision between ion and surface atom, the transition from (220) to (111) orientation is found to occur when the average energy transferred per atom normal to the

  10. Enhanced white photoluminescence in silicon-rich oxide/SiO2 superlattices by low-energy ion-beam treatment.

    PubMed

    Shih, Chuan-Feng; Hsiao, Chu-Yun; Su, Kuan-Wei

    2013-07-01

    This study presents the crystalline and luminescence properties of silicon-rich oxide (SRO)/SiO2 superlattices in which the SRO layers were prepared with a low-energy (<60 eV) argon ion-beam treatment. Experimental results evidenced that density of the Si nanocrystals (NCs) in the SRO layer was increased by ion-beam treatment after annealing, increasing the surface roughness. The stoichiometry of the as-prepared SRO layer was unchanged but the phase separation of the annealed SRO layer was enhanced by the ion-beam treatment, yielding visible white photoluminescence from the E' centers and Si NCs.

  11. An ion-beam-assisted process for high-T{sub c} Josephson junctions

    SciTech Connect

    Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

    1997-10-01

    We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T{sub c}) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I{endash}V characteristics. The well-defined Shapiro steps have been seen on the I{endash}V curves under microwave radiation. The magnetic modulation of critical current of a 4 {mu}m width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 {mu}V at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0{times}10{sup {minus}4}G. {copyright} {ital 1997 American Institute of Physics.}

  12. Physical properties of nitrogenated amorphous carbon films produced by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Rossi, Francois; Andre, Bernard; Veen, A. Van; Mijnarends, P. E.; Schut, H.; Labohm, F.; Delplancke, Marie Paule; Dunlop, Hugh; Anger, Eric

    1994-12-01

    Carbon films with up to 32 at.% N (a-C:N) have been prepared using an ion-beam-assisted magnetron, with an N2(+) beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. Electron energy loss spectroscopy shows that these a-C:N films are mostly graphitic with up to 20% C Sp3 bonding. Rutherford backscattering spectroscopy and neutron depth profiling show that the density goes through a maximum as the average deposited energy per unit depth increases. X-ray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon in triple (C(triple bond)N and double (C=N) bonds. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with deposited energy. These results are consistent with a densification induced by the collisions at low deposited energy, and damage-induced graphitization at high deposited energy values.

  13. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  14. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    PubMed Central

    Wang, Andrew; Butte, Manish J.

    2014-01-01

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished. PMID:25161320

  15. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    SciTech Connect

    Wang, Andrew; Butte, Manish J.

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  16. Low-temperature (< 100 C) growth of AlN by ion beam assisted deposition

    SciTech Connect

    Karimy, H.; Tobin, E.; Bricault, R.; Cremins-Costa, A.; Colter, P.; Namavar, F.; Perry, D.

    1996-12-31

    During the past few years, there has been growing interest in aluminum nitride (AlN) thin films because of their excellent optical, electrical, chemical, mechanical and high-temperature properties. Ion beam assisted deposition (IBAD) was used to deposit AlN films on flat and curved substrates, including Si, SIMOX, sapphire, quartz, aluminum, stainless steel, and carbon, at temperatures substantially below 100 C. The objective as to enhance the physical and mechanical properties of AlN film by controlling the crystal size and structures. Experimental results, as obtained by Rutherford backscattering spectroscopy (RBS) show the formation of stoichiometric AlN. Plan-view/cross-sectional transmission electron microscopy (TEM), clearly demonstrated the formation of a smooth, uniform AlN film. Electron diffraction and dark field TEM studies clearly show the growth of AlN crystallites with cubic and/or hexagonal structures and dimensions of 30 to 100 {angstrom}. The films are transparent and have good adhesion to all substrates. In addition to excellent high temperature (up to 1,050 C measured) and chemical stability (shown through a variety of acid tests), these films have demonstrated extreme hardness, greater than two times that of bulk AlN.

  17. Physical properties of a-C:N films produced by ion beam assisted deposition

    SciTech Connect

    Rossi, F. ); Andre, B. ); van Veen, A.; Mijnarends, P.E.; Schut, H.; Labohm, F. ); Dunlop, H. ); Delplancke, M.P. ); Hubbard, K. )

    1994-09-01

    Carbon films with up to 32 at. % of nitrogen have been prepared with ion beam assisted magnetron, using a N[sup +][sub 2]/N[sup +] beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. EELS, SXS, XPS, and IR studies show that these a-C:N films are mostly graphitic and have up to 20% [ital sp][sup 3] bonding. Nitrogen is mostly combined with carbon in nitrile (C[equivalent to]N) and imine (C=N) groups. RBS and NDP show that density goes through a maximum as the average damage energy per incoming ion increases. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with average damage energy. These results are consistent with a densification induced by the collisions at low average damage energy values and induced graphitization at higher damage energy values. These results are similar to what is observed for Ar ion assisted deposition of a-C films. The mechanical properties of these films have been studied with a nanoindenter, and it was found that the hardness and Young's modulus go through a maximum as the average damage energy is increased. The maximum of mechanical properties corresponds to the minimum in the void concentration in the film. Tribological studies of the a-C:N show that the friction coefficient obtained against diamond under dynamic loading decreases strongly as the nitrogen composition increases, this effect being more pronounced at low loads.

  18. Dependence of low energy ion beam exposure effects in silicon on ion species, exposure history, and material properties

    NASA Astrophysics Data System (ADS)

    Davis, R. J.; Climent, A.; Fonash, S. J.

    1985-03-01

    Several groups have shown that low energy (25-1500 eV) ion bombardment of silicon causes significant surface damage; these disordered layers are hundreds of ángströms deep and are easily characterized by electron spin resonance and Rutherford backscattering techniques. This surface damage also manifests itself as positive charge residing at the metal-semiconductor interface of metal contacts to these layers. Recently we have shown that this damage increases with the inverse of the ion size, if ion energy is kept constant. However, we have demonstrated that impingement by the lightest of ions (H +) can electrically passivate the damage caused by other ions; namely, hydrogen itself causes extensive damage, but it also passivates by tying up dangling bonds. This interaction of hydrogen with the damage caused by other ions is fairly complex. For example, the 0.4 keV hydrogen ions used to completely passivate 1.0 keV Ar + ion damage (as determined by electrical measurements) cause significant disorder and result in electrically active damage, when not preceded by the Ar + impingement. Thus low energy ion beam damage is found to depend on ion size, ion chemical activity, and sample exposure history. In addition, we have also seen significant differences in the annealing behavior of ion damage in float-zoned versus Czochralski-grown silicon. While 1.0 keV Ar + damage of CZ silicon anneals only at 1000°C, damaged FZ silicon anneals nearly completely at 800°C. Such behavior strongly suggests that background oxygen and carbon may play a role in ion beam damage of silicon.

  19. Multi Domain Alignment of Liquid Crystals on Silicon Oxide Film Surfaces through Ion Beam Exposure

    NASA Astrophysics Data System (ADS)

    Son, Phil Kook; Jo, Bong Kyun; Kim, Jae Chang; Yoon, Tae-Hoon; Rho, Soon Joon; Shin, Sung Tae; Kim, Jang Sub; Lim, Soon Kwon; Souk, Jun Hyung

    2008-11-01

    We propose a method for the multi domain alignment of liquid crystals (LCs) through ion beam exposure. We have demonstrated the multi domain ion-beam vertical alignment (IVA) of LC on SiOx film surfaces using a stainless steel mask. We found that IVA cells require a polar anchoring energy higher than 2×10-4 J/m2. The disclination linewidth of an IVA cell decreased from 45 to 13 µm with an increase in polar anchoring energy from 2 to 5.8×10-4 J/m2. The turn-on time of an IVA cell was 35% faster than that of a patterned vertical alignment cell.

  20. Stress-induced solid flow drives surface nanopatterning of silicon by ion-beam irradiation

    NASA Astrophysics Data System (ADS)

    Castro, M.; Gago, R.; Vázquez, L.; Muñoz-García, J.; Cuerno, R.

    2012-12-01

    Ion-beam sputtering (IBS) is known to produce surface nanopatterns over macroscopic areas on a wide range of materials. However, in spite of the technological potential of this route to nanostructuring, the physical process by which these surfaces self-organize remains poorly understood. We have performed detailed experiments of IBS on Si substrates that validate dynamical and morphological predictions from a hydrodynamic description of the phenomenon. We introduce a systematic approach to perform the experiments under conditions that guarantee the applicability of a linear description, helping to clarify the experimental framework in which theories should be tested. Among our results, the pattern wavelength is experimentally seen to depend almost linearly on ion energy, in agreement with existing results for other targets that are amorphous or become so under irradiation. Our work substantiates flow of a nanoscopically thin and highly viscous surface layer, driven by the stress created by the ion beam, as an accurate description of this class of systems.

  1. Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids

    SciTech Connect

    Takeuchi, Mitsuaki Hoshide, Yuki; Ryuto, Hiromichi; Takaoka, Gikan H.

    2016-03-15

    The effect of irradiating 1-ethyl-3-methylimidazolium positive (EMIM{sup +}) or dicyanamide negative (DCA{sup –}) ion beams using an ionic liquid ion source was characterized concerning its sputtering properties for single crystalline Si(100) and nonalkaline borosilicate glass substrates. The irradiation of the DCA{sup –} ion beam onto the Si substrate at an acceleration voltage of 4 and 6 kV exhibited detectable sputtered depths greater than a couple of nanometers with an ion fluence of only 1 × 10{sup 15} ions/cm{sup 2}, while the EMIM{sup +} ion beam produced the same depths with an ion fluence 5 × 10{sup 15} ions/cm{sup 2}. The irradiation of a 4 kV DCA{sup –} ion beam at a fluence of 1 × 10{sup 16} ions/cm{sup 2} also yields large etching depths in Si substrates, corresponding to a sputtering yield of Si/DCA{sup – }= 10, and exhibits a smoothed surface roughness of 0.05 nm. The interaction between DCA{sup –} and Si likely causes a chemical reaction that relates to the high sputtering yield and forms an amorphous C-N capping layer that results in the smooth surface. Moreover, sputtering damage by the DCA{sup –} irradiation, which was estimated by Rutherford backscattering spectroscopy with the channeling technique, was minimal compared to Ar{sup +} irradiation at the same condition. In contrast, the glass substrates exhibited no apparent change in surface roughnesses when sputtered by the DCA{sup –} irradiation compared to the unirradiated glass substrates.

  2. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

    DOE PAGES

    Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; ...

    2016-10-04

    Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assistedmore » and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.« less

  3. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    SciTech Connect

    Krause, Matthias; Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas; Oates, Thomas W. H.; Luis Endrino, Jose

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  4. Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlOxNy thin films.

    PubMed

    Chen, Sheng-Hui; Hsu, Chun-Che; Wang, Hsuan-Wen; Yeh, Chi-Li; Tseng, Shao-Ze; Lin, Hung-Ju; Lee, Cheng-Chung; Peng, Cheng-Yu

    2011-03-20

    Negative charge material, AlOxNy, has been fabricated to passivate the surface of p-type silicon. The fabrication of AlOxNy was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10(11) cm(-2) to 2.26×10(12) cm(-2) after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1×10(5)  to 32 cm/s.

  5. Ion-beam-assisted deposition of metal nanocluster thin films with nonlinear optical properties

    SciTech Connect

    Cotell, C.M.; Carosella, C.A.; Flom, S.R.; Schiestel, S.; Haralampus, N.; Barnett, T.W.; Bartoli, F.J.

    1996-12-31

    Metal nanocluster thin films ({approximately} 200 nm thickness) consisting of noble metal (Au) clusters (5--30 nm) in an active metal oxide (Nb{sub 2}O{sub 5}) matrix were deposited by evaporation or ion beam assisted deposition (IBAD). In some cases the films were given a post-deposition anneal. The microstructure of the films was examined by plan view and cross sectional transmission electron microscopy (TEM). The size of the metal nanoclusters was found to depend upon the temperature of the post-deposition anneal as well as the conditions of ion bombardment. Ion bombardment was found to stabilize smaller size particles. The linear optical properties of the films, as measured by VIS/UV spectroscopy, show particle size-dependent surface plasmon resonance effects. The nonlinear optical (NLO) properties of the nanoclusters in oxidized niobium were probed experimentally using degenerate four wave mixing (DFWM) and nonlinear transmission (NLT). The DFWM measurements yielded signals that showed strong evidence of saturation and give large values of {vert_bar}{chi}{sup (3)}{sub xxxx}{vert_bar}. NLT measurements demonstrated that the nonlinear absorption coefficient and, hence, I{sub m}{chi}{sup (3)}{sub xxxx} was negative. Time resolved DFWM measurements exhibited dynamics that decayed on a several picosecond time scale. The magnitude and the picosecond dynamics of the NLO response were compared to those observed in gold nanoclusters formed by ion implantation in other media. The advantages of the IBAD method for fabricating third order NLO films include the ability to deposit films of arbitrary active region thickness and, more importantly, high cluster densities.

  6. Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Burat, O.; Bouchier, D.; Stambouli, V.; Gautherin, G.

    1990-09-01

    We have studied boron nitride films deposited at room temperature by ion-beam-assisted deposition in an ultrahigh vacuum apparatus, with ion accelerating voltages ranging between 0.25 and 2 kV. By using complementarily in situ Auger electron spectrometry and ex situ nuclear analyses to determine the respective surface and bulk N concentrations in the deposited films, we were able to identify the different phases of the mechanism leading to the nitridation of evaporated boron by nitrogen ions. For low nitrogen/boron flux ratios, the incorporation of nitrogen seems to be only governed by ion implantation, and, with respect to the depth of the deposit, the surface is found largely depleted in nitrogen, while the N-incorporation yield remains close to one whatever the ion energy. Such a behavior is well verified as long as a critical bulk nitrogen concentration close to 5.5×1022 cm-3 has not been achieved. For concentrations greater than this, superstoichiometric material is obtained up to a saturation which corresponds to a bulk N incorporation ranging from 6 to 7×1022 cm-3. Further increase of the N/B flux ratio induces a strong diffusion process from N-rich bulk to N-depleted surface, which results in the nitridation of surface boron atoms and a loss of nitrogen by sputtering or desorption. The density measurements seem to indicate that the synthesized phase is close to h-BN. However, the density of B-rich layers ([N]/[B]≊0.2-0.3) is found to be very close to that calculated for a mixture of pure boron and c-BN. The transparency and microhardness of the synthesized BN have satisfying values for its application as a wear-resistant optical coating, but it is not c-BN.

  7. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Mao, Shoudong; Yang, Hengxiu; Li, Jinlong; Huang, Feng; Song, Zhenlun

    2011-04-01

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar+ ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar+ ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  8. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    SciTech Connect

    Margarone, D.; Prokupek, J.; Rus, B.; Krasa, J.; Velyhan, A.; Laska, L.; Giuffrida, L.; Torrisi, L.; Picciotto, A.; Nowak, T.; Musumeci, P.; Mocek, T.; Ullschmied, J.

    2011-05-15

    Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

  9. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    NASA Astrophysics Data System (ADS)

    Margarone, D.; Krása, J.; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, A.; Prokůpek, J.; Láska, L.; Mocek, T.; Ullschmied, J.; Rus, B.

    2011-05-01

    Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

  10. A DLTS study of defects formed in silicon during ion beam mixing

    NASA Astrophysics Data System (ADS)

    Auret, F. D.; Malherbe, J. B.; Nel, M.; Myburg, G.

    1988-12-01

    Ion beam mixing in Schottky barrier diodes (SBDs), achieved by implanting ions through the metal gate of the SBD, has been shown to cause substantial changes in its electrical properties. During the implantation structural damage is caused, both in the metal gate and in the Si substrate. In the latter this damage gives rise to electrically active defects. We report here on these defects caused by implanting 100 keV Si + ions through 400 Å thick Ni Schottky barrier diodes on n- and p-Si with doses ranging between 10 12 and 10 16 cm -2. The results obtained using deep level transient spectroscopy (DLTS) showed the presence of several implantation-induced defects. For some of them the DLTS "signatures" correspond to those of defects caused by high energy (1 Mev) electron irradiation. Further, IV and CV measurements in conjunction with isochronal annealing revealed a definite trend between the properties of the Schottky barrier diodes and the deep level defects caused by ion beam mixing.

  11. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    SciTech Connect

    Alexandrov, P. A. Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

    2013-02-15

    Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

  12. The luminescence of LaSi 2- x formed by ion beam synthesis in (1 1 1) silicon wafer

    NASA Astrophysics Data System (ADS)

    Cheng, Guoan; Xiao, Zhisong; Zhu, Jinghuan; Xu, Songlan; Ye, Dunru

    1998-02-01

    The structure and luminescence of compound layer formed by 45-180 keV La ion implantation on (1 1 1) silicon substrate have been investigated. X-ray diffractometer (XRD) was used to determine the phase structure formed in ion beam synthesis. A fluorescence photospectrometer was used to measure the photoluminescence (PL). The results show that LaSi 2- x compounds have been formed directly during the ion implantation. The samples exhibited intensive luminescence and up-conversion luminescence at room temperature (RT). Their PL intensity decreased with increasing of the excitation wavelength in the range from 220 to 250 nm. On the other hand, their PL intensity increases with increasing of the excitation wavelength between 600 and 700 nm. The LaSi 2- x films have been found to have a very high efficiency of up-conversion from red to blue-violet.

  13. Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si

    PubMed Central

    2011-01-01

    Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding. PMID:21711934

  14. Comparison of mechanical characteristics of focused ion beam fabricated silicon nanowires

    NASA Astrophysics Data System (ADS)

    Ina, Ginnosuke; Fujii, Tatsuya; Kozeki, Takahiro; Miura, Eri; Inoue, Shozo; Namazu, Takahiro

    2017-06-01

    In this study, we investigate the effects of focused ion beam (FIB)-induced damage and specimen size on the mechanical properties of Si nanowires (NWs) by a microelectromechanical system (MEMS)-based tensile testing technique. By an FIB fabrication technique, three types of Si NWs, which are as-FIB-fabricated, annealed, and FIB-implanted NWs, are prepared. A sacrificial-oxidized NW is also prepared to compare the mechanical properties of these FIB-based NWs. The quasi-static uniaxial tensile tests of all the NWs are conducted by scanning electron microscopy (SEM). The fabrication process and specimen size dependences on Young’s modulus and fracture strength are observed. Annealing is effective for improving the Young’s modulus of the FIB-damaged Si. Transmission electron microscopy (TEM) suggests that the mechanism behind the process dependence on the mechanical characteristics is related to the crystallinity of the FIB-damaged portion.

  15. Ion-beam-assisted formation of interconnections into high temperature polymers

    NASA Astrophysics Data System (ADS)

    Davenas, J.; Boiteux, G.; Bureau, J. M.; Broussoux, D.

    1990-12-01

    High energy ion beams induce conductive properties into heat-resistant polymers due to band closing which results from the formation of extended aromatic domains. The aromatic cycles which ensure the high stability of the molecular structure promote the formation of highly conducting (10 2-10 3 s/cm) phases in these polymers upon irradiation. The field of application of this process is analyzed and we show that the main interest lies in the formation of short links such as for vertical interconnections (VIAs) in multilevel integration of circuits or in the restructuration of circuits. We discuss the main parameters which control the appearance of conductivity and emphasize the role of the ion beam flux, which is a cause of reproducibility difficulties. Some solutions are proposed.

  16. Interface-state-controlled segregation of gold during ion-beam-induced epitaxy of amorphous silicon

    SciTech Connect

    Custer, J.S.; Thompson, M.O. ); Jacobson, D.C.; Poate, J.M. )

    1991-10-15

    Segregation coefficients and velocity enhancements for Au in amorphous Si during ion-beam-induced epitaxial crystallization were measured. At 320 {degree}C, velocity enhancements of up to 2.5 times were observed, and interface breakdown occurred at interfacial Au concentrations of 11 at. %. Although qualitatively similar to thermal solid-phase epitaxy, these velocity enhancements are substantially reduced in magnitude while the interface breakdown occurs at much higher concentrations. Between 250 {degree}C and 400 {degree}C, Au is trapped at the moving interface with segregation coefficients {ital k}, which are approximately velocity and concentration independent and vary between 0.001 and 0.012. In contrast with classical segregation, however, {ital k} increases linearly with interface position during the initial stages of growth to a temperature-dependent steady-state value. At 250 {degree}C, for example, {ital k} increases by at least a factor of 4 to 0.012 during growth. These results suggest an evolving interface structure from the initial thermal configuration to an irradiation-induced steady-state configuration with a higher trapping efficiency.

  17. Ion-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities

    NASA Astrophysics Data System (ADS)

    Moon, B.; Yoo, S.; Kim, J.-S.; Kang, S. J.; Muñoz-García, J.; Cuerno, R.

    2016-03-01

    We report experiments on surface nanopatterning of Si targets which are irradiated with 2-keV Ar+ ions impinging at near-glancing incidence, under concurrent codeposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive x-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.

  18. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    SciTech Connect

    Ozcan, Ahmet S.; Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  19. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    NASA Astrophysics Data System (ADS)

    Poudel, P. R.; Poudel, P. P.; Paramo, J. A.; Strzhemechny, Y. M.; Rout, B.; McDaniel, F. D.

    2014-09-01

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C-) at a fluence of 3 × 1017 atoms/cm2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H2 + 96 % Ar) at 900 °C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

  20. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    NASA Astrophysics Data System (ADS)

    Poudel, P. R.; Poudel, P. P.; Paramo, J. A.; Strzhemechny, Y. M.; Rout, B.; McDaniel, F. D.

    2015-02-01

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C-) at a fluence of 3 × 1017 atoms/cm2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H2 + 96 % Ar) at 900 °C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

  1. Optical properties of ion beam textured metals. [using copper, silicon, aluminum, titanium and stainless steels

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.; Weigand, A. J.; Mirtich, M. J.

    1977-01-01

    Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8 cm diameter electron bombardment ion source. Simultaneously sputter-deposited tantalum was used to facilitate the development of the surface microstructure. Scanning electron microscopy of the ion textured surfaces revealed two types of microstructure. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Spectral reflectance was measured using an integrating sphere and a holraum reflectometer. Total reflectance for air mass 0 and 2, solar absorptance and total emittance normalized for a 425 K black body were calculated from the reflectance measurements.

  2. Optical confinement achieved in zinc oxide modified by energetic silicon ions beams

    NASA Astrophysics Data System (ADS)

    Ming, X.; Lu, F.; Zhang, Y.; Zhang, F.; Ma, C.; Fan, R.; Xu, B.

    2017-09-01

    Optical confinement was achieved in zinc oxide by silicon ions irradiation. Waveguide effects were found in all the irradiated samples. The optical properties and the field intensity distribution of the propagation mode, as well as the refractive index profile in the irradiated waveguide were studied and reconstructed accordingly. Achievement of optical waveguide structure in zinc oxide by silicon ions irradiation makes it possible to expand its application in modern optics and optical telecommunications in an attempt to control the propagation of light and to enhance the optical efficiency.

  3. Development of Functional Surfaces on High-Density Polyethylene (HDPE) via Gas-Assisted Etching (GAE) Using Focused Ion Beams.

    PubMed

    Sezen, Meltem; Bakan, Feray

    2015-12-01

    Irradiation damage, caused by the use of beams in electron and ion microscopes, leads to undesired physical/chemical material property changes or uncontrollable modification of structures. Particularly, soft matter such as polymers or biological materials is highly susceptible and very much prone to react on electron/ion beam irradiation. Nevertheless, it is possible to turn degradation-dependent physical/chemical changes from negative to positive use when materials are intentionally exposed to beams. Especially, controllable surface modification allows tuning of surface properties for targeted purposes and thus provides the use of ultimate materials and their systems at the micro/nanoscale for creating functional surfaces. In this work, XeF2 and I2 gases were used in the focused ion beam scanning electron microscope instrument in combination with gallium ion etching of high-density polyethylene surfaces with different beam currents and accordingly different gas exposure times resulting at the same ion dose to optimize and develop new polymer surface properties and to create functional polymer surfaces. Alterations in the surface morphologies and surface chemistry due to gas-assisted etching-based nanostructuring with various processing parameters were tracked using high-resolution SEM imaging, complementary energy-dispersive spectroscopic analyses, and atomic force microscopic investigations.

  4. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    SciTech Connect

    Anglin, Kevin Goodhue, William D.; Swint, Reuel B.; Porter, Jeanne

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  5. Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

    NASA Astrophysics Data System (ADS)

    Intarasiri, S.; Yu, L. D.; Singkarat, S.; Hallén, A.; Lu, J.; Ottosson, M.; Jensen, J.; Possnert, G.

    2007-04-01

    Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C12+ implantation of a p-type (100) Si wafer at a fluence of 6.5×1017 ions/cm2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV I127 ions to a very low fluence of 1012 ions/cm2 at temperatures from 80 to 800 °C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.

  6. Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

    SciTech Connect

    Xing Qian; Herbots, N.; Hart, M.; Bradley, J. D.; Wilkens, B. J.; Sell, D. A.; Culbertson, R. J.; Whaley, S. D.; Sell, Clive H.; Kwong, Henry Mark Jr.

    2011-06-01

    The water affinity of Si-based surfaces is quantified by contact angle measurement and surface free energy to explain hydrophobic or hydrophilic behavior of silicone, silicates, and silicon surfaces. Surface defects such as dangling bonds, surface free energy including Lewis acid-base and Lifshitz-van der Waals components are discussed. Water nucleation and condensation is further explained by surface topography. Tapping mode atomic force microscopy (TMAFM) provides statistical analysis of the topography of these Si-based surfaces. The correlation of the above two characteristics describes the behavior of water condensation at Si-based surfaces. Surface root mean square roughness increasing from several A ring to several nm is found to provide nucleation sites that expedite water condensation visibly for silica and silicone. Hydrophilic surfaces have a condensation pattern that forms puddles of water while hydrophobic surfaces form water beads. Polymer adsorption on these surfaces alters the water affinity as well as the surface topography, and therefore controls condensation on Si-based surfaces including silicone intraocular lens (IOL). The polymer film is characterized by Rutherford backscattering spectrometry (RBS) in conjunction with 4.265 MeV {sup 12}C({alpha}, {alpha}){sup 12}C, 3.045 MeV {sup 16}O({alpha},{alpha}){sup 16}O nuclear resonance scattering (NRS), and 2.8 MeV elastic recoil detection (ERD) of hydrogen for high resolution composition and areal density measurements. The areal density of hydroxypropyl methylcellulose (HPMC) film ranges from 10{sup 18} atom/cm{sup 2} to 10{sup 19} atom/cm{sup 2} gives the silica or silicone surface a roughness of several A ring and a wavelength of 0.16{+-}0.02 {mu}m, and prevents fogging by forming a complete wetting layer during water condensation.

  7. Focused ion beam assisted three-dimensional rock imaging at submicron scale

    SciTech Connect

    Tomutsa, Liviu; Radmilovic, Velimir

    2003-05-09

    Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of gallium ions (Ga+) accelerated by potentials of up to 30 kV and currents up to 20,000 pA, yields very clean, flat surfaces in which the pore-grain boundaries appear in high contrast. No distortion of the pore boundaries due to the ion milling is apparent. After each milling step, as a new surface is exposed, an image of the surface is generated. Using secondary electrons or ions, resolutions as high as 10 nm can be obtained. Afterwards, the series of 2D images can be stacked in the computer and, using appropriate interpolation and surface rendering algorithms, the 3D pore structure is reconstructed.

  8. Optical and Structural Properties of Silicon with Ion-Beam Synthesized InSb Nanocrystals

    NASA Astrophysics Data System (ADS)

    Komarov, F. F.; Romanov, I. A.; Vlasukova, L. A.; Milchanin, O. V.; Parkhomenko, I. N.; Kovaleva, T. B.; Korolik, O. V.; Mudryi, A. V.; Wendler, E.

    2017-01-01

    Transmission electron microscopy (TEM), Raman scattering (RS), and photoluminescence (PL) techniques are used to study the structure, phase composition, and radiative properties of silicon with implanted InSb nanocrystals produced by implanting Sb+ and In+ ions with energies of 350 keV and fluences of 3.5·1016 cm-2 followed by heat treatment at 1100°C for 3, 10, and 60 min. The TEM and RS data confirm the formation of InSb nanocrystals with sizes ranging from 2 to 50 nm in the implanted and annealed samples. A broad band in the 0.8-1.05 eV range is detected in low-temperature (4.2 K) PL spectra of the annealed samples. The possible mechanisms for the luminescence in this range are luminescence of InSb nanocrystals and radiative recombination between the conduction band of silicon and an In acceptor.

  9. Effect of oxygen on ion-beam induced synthesis of SiC in silicon

    NASA Astrophysics Data System (ADS)

    Artamonov, V. V.; Valakh, M. Ya.; Klyui, N. I.; Melnik, V. P.; Romanyuk, A. B.; Romanyuk, B. N.; Yuhimchuk, V. A.

    1999-01-01

    The properties of Si-structures with a buried silicon carbide (SiC) layer created by high-dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. The effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz-Si or in Si (Cz-or Fz-) subjected to additional oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segregation and amorphous carbon film formation on SiC grain boundaries were revealed.

  10. Independence of interrupted coarsening on initial system order: ion-beam nanopatterning of amorphous versus crystalline silicon targets.

    PubMed

    Muñoz-García, J; Gago, R; Cuerno, R; Sánchez-García, J A; Redondo-Cubero, A; Castro, M; Vázquez, L

    2012-09-19

    Interrupted coarsening (IC) has recently been identified as an important feature for the dynamics of the typical length-scale in pattern-forming systems on surfaces. In practice, it can be beneficial to improve pattern ordering since it combines a certain degree of defect suppression with a limited increase in the typical pattern wavelength. However, little is known about its robustness with respect to changes in the preparation of the initial system for cases with potential applications. Working in the context of nano-scale pattern formation by ion-beam sputtering (IBS), we prove that IC properties do not depend on sample preparation. Specifically, interface dynamics under IBS is quantitatively compared on virgin amorphous and crystalline silicon surfaces, using 1 keV Ar(+) ions at normal incidence where nanodot pattern formation is triggered by concurrent co-deposition of Fe atoms during processing. Atomic force microscopy shows that dot patterns with similar spatial order and dynamics are obtained in both cases, underscoring the key dynamical role of the amorphous surface layer produced by irradiation. Both systems have been quantitatively described by an effective interface equation. We employ a new procedure based on the linear growth of the initial surface correlations to accurately estimate the equation coefficients. Such a method improves the predictive power of the interface equation with respect to previous studies and leads to a better description of the experimental pattern and its dynamical features.

  11. Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

    NASA Astrophysics Data System (ADS)

    Akhter, Perveen

    In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced

  12. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  13. Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

    SciTech Connect

    Kawakami, Y.; Kaneta, A.; Funato, M.; Su, L.; Zhu, Y.; Okamoto, K.; Kikuchi, A.; Kishino, K.

    2010-01-15

    The optical properties of InGaN/GaN quantum wells, which were nanopatterned into cylindrical shapes with diameters of 2 {mu}m, 1 {mu}m, or 500 nm by chemically assisted ion beam etching, were investigated. Photoluminescence (PL) and time-resolved PL measurements suggest inhomogeneous relaxation of the lattice-mismatch induced strain in the InGaN layers. By comparing to a strain distribution simulation, we found that partial stain relaxation occurs at the free side wall, but strain remains in the middle of the pillar structures. The strain relaxation leads to an enhanced radiative recombination rate by a factor of 4-8. On the other hand, nonradiative recombination processes are not strongly affected, even by postgrowth etching. Those characteristics are clearly reflected in the doughnut-shape emission patterns observed by optical microscopy.

  14. NEXAFS study on the local structures of DLC thin films formed by Ar cluster ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Kanda, Kazuhiro; Kitagawa, Teruyuki; Shimizugawa, Yutaka; Tsubakino, Harushige; Yamada, Isao; Matsui, Shinji

    2003-08-01

    Near-edge X-ray absorption fine structure (NEXAFS) spectra were measured for the optimization of synthesis conditions on the production of diamond-like carbon (DLC) thin films by the Ar gas cluster ion beam (GCIB) assisted deposition of fullerene. The sp2 contents of DLC films were estimated from the analysis of the peak corresponding to the transition of the excitation electron from a carbon 1s orbital to a π* orbital in the NEXAFS spectrum of the carbon K-edge over the excitation energy range 275-320 eV. Substrate temperature and Ar cluster ion acceleration voltage in the synthesis conditions of DLC films were optimized to make the sp2 content minimum.

  15. Decreased bacterial growth on titanium nanoscale topographies created by ion beam assisted evaporation

    PubMed Central

    Stolzoff, Michelle; Burns, Jason E; Aslani, Arash; Tobin, Eric J; Nguyen, Congtin; De La Torre, Nicholas; Golshan, Negar H; Ziemer, Katherine S; Webster, Thomas J

    2017-01-01

    Titanium is one of the most widely used materials for orthopedic implants, yet it has exhibited significant complications in the short and long term, largely resulting from poor cell–material interactions. Among these many modes of failure, bacterial infection at the site of implantation has become a greater concern with the rise of antibiotic-resistant bacteria. Nanostructured surfaces have been found to prevent bacterial colonization on many surfaces, including nanotextured titanium. In many cases, specific nanoscale roughness values and resulting surface energies have been considered to be “bactericidal”; here, we explore the use of ion beam evaporation as a novel technique to create nanoscale topographical features that can reduce bacterial density. Specifically, we investigated the relationship between the roughness and titanium nanofeature shapes and sizes, in which smaller, more regularly spaced nanofeatures (specifically 40–50 nm tall peaks spaced ~0.25 μm apart) were found to have more effect than surfaces with high roughness values alone. PMID:28223804

  16. An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum

    SciTech Connect

    Mach, Jindrich; Kolibal, Miroslav; Sikola, Tomas; Samoril, Tomas; Voborny, Stanislav; Zlamal, Jakub; Spousta, Jiri; Dittrichova, Libuse

    2011-08-15

    The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values ({approx_equal}10{sup 1} eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10{sup 1} eV and 10{sup 1} nA/cm{sup 2}, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions.

  17. Ion beam synthesis by tungsten-implantation into 6H-silicon carbide

    NASA Astrophysics Data System (ADS)

    Weishart, H.; Steffen, H. J.; Matz, W.; Voelskow, M.; Skorupa, W.

    1996-05-01

    Synthesis of a highly conductive surface layer on 6H-silicon carbide was achieved by high-dose, room temperature implantation of tungsten at 200 keV. Subsequently, the samples were annealed in two steps, namely at 500°C and 950°C. The influence of both dose and annealing on the reaction of W with SiC was investigated. Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) contributed to study the structure and composition of the layer as well as the chemical states of the elements. During implantation sputtering becomes significant for doses exceeding 1.0 × 10 17 cm -2. Formation of tungsten carbide and silicide is already observed in the as-implanted state. An annealing temperature of 950°C is necessary to crystallize tungsten carbide. However, tungsten silicide remains amorphous at this temperature. Therefore, a mixture of polycrystalline tungsten carbide and amorphous tungsten silicide develops under these conditions. The resistivity of such a layer implanted with 1.0 × 10 17 W +cm -2 and annealed at 950°C is 565 μΩ cm.

  18. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    NASA Astrophysics Data System (ADS)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna

    2010-11-01

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 4000C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier& Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  19. a-Si:F and a-Si:F:H prepared by ion-beam-assisted reactive deposition

    NASA Astrophysics Data System (ADS)

    Zhang, S.; Brodie, D. E.

    1992-08-01

    a-Si:F and a-Si:F:H films have been prepared by ion-beam-assisted deposition using SiF4, SiH4+Ar, or SiF4+SiH4 as the gases for the ion source. Fluorine in a-Si eliminates some dangling bonds, increases the optical gap, and decreases the dark conductivity. The results are influenced mainly by the ion-beam energy used. The a-Si:F films do not exhibit an activated conductivity even up to 150 °C, and no photoconductivity could be detected. However, film properties were significantly improved when a very small amount of H was added to the a-Si:F and much less than 1 at. % H produced films that were photoconducting and had activated conductivities. The properties of these a-Si:F:H are strongly dependent on both the fluorine concentration CF and the hydrogen concentration CH. The deposition rate decreases with increasing SiF4 content in the source gas, and neither CF nor CH vary linearly with the change in the source gas ratio SiH4/(SiF4+SiH4). Hence, CH must be known and controlled in order to evaluate the effect of fluorine on the film's properties. By studying a series of a-Si:F:H samples containing the same CH, it is noted that incorporating some F does improve the film's electrical properties. Annealing experiments suggest that an observed peak at 2100 cm-1 in the IR spectra of these a-Si:F:H films is not completely due to SiH2, as has been suggested by others.

  20. Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

    NASA Astrophysics Data System (ADS)

    Pallon, J.; Syväjärvi, M.; Wang, Q.; Yakimova, R.; Iakimov, T.; Elfman, M.; Kristiansson, P.; Nilsson, E. J. C.; Ros, L.

    2016-03-01

    Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

  1. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  2. Ion beam assisted deposition of a thin film coating on a gradient-index lens array.

    PubMed

    Kyogoku, T; Suzuki, T; Mino, M

    1990-10-01

    A new coating method which employs ion bombardment has been developed for a gradient-index (GRIN) rod lens array using silicone rubber and fiber reinforced plastic plates in its construction. The thin film coatings deposited using this method passed the durability tests on the basis of MIL-M-13508C. The adhesion of the thin film coating was strong and durable enough to allow for use on GRIN rod lens arrays in photocopiers. The effect of ion bombardment has been investigated with thin film analysis data by Fourier transform infrared microspectroscopy and secondary ion mass spectrometry.

  3. Neutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays

    SciTech Connect

    Gotoh, Yasuhito; Tsuji, Hiroshi; Taguchi, Shuhei; Ikeda, Keita; Kitagawa, Takayuki; Ishikawa, Junzo; Sakai, Shigeki

    2012-11-06

    Neutralization of space charge on a high-current and low-energy ion beam was attempted to reduce the divergence with an aid of low-energy electrons supplied from silicon based field emitter arrays (Si-FEAs). An argon ion beam with the energy of 500 eV and the current of 0.25 mA was produced by a microwave ion source. The initial beam divergence and the emittance were measured at the entrance of the analysis chamber in order to estimate the intrinsic factors for beam divergence. The current density distribution of the beam after transport of 730 mm was measured by a movable Faraday cup, with and without electron supply from Si-FEAs. A similar experiment was performed with tungsten filaments as an electron source. The results indicated that the electron supply from FEA had almost the same effect as the thermionic filament, and it was confirmed that both electron sources can neutralize the ion beam.

  4. Durability of Solar Reflective Materials with an Alumina Hard Coat Produced by Ion-Beam-Assisted Deposition: Preprint

    SciTech Connect

    Kennedy, C. E.; Smilgys, R. V.

    2002-10-01

    A promising low-cost reflector material for solar concentrating power (CSP) generation is a silvered substrate protected by an alumina coating several microns thick. The alumina hard coat is deposited under high vacuum by ion-beam-assisted-deposition (IBAD). Samples of this material have been produced both by batch and continuous roll-coating processes. The substrate materials investigated were polyethylene terephthalate (PET), PET laminated to stainless-steel foil, and chrome-plated carbon steel strip. The advantage of steel strip compared to PET is that it withstands a higher process temperature and lowers the final product installation costs. In this paper, we compare the durability of batch and roll-coated reflective materials with an alumina deposition rate as high as 10 nm/s. In general, the durability of the samples is found to be excellent. Comparisons between accelerated and outdoor exposure testing results indicate that these front-surface mirrors are more susceptible to weather conditions not simulated by accelerated tests (i.e., rain, sleet, snow, etc.) than other types of solar reflectors. For long-term durability, edge protection will be necessary, and durability could be improved by the addition of an adhesion-promoting layer between the silver and alumina.

  5. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    NASA Astrophysics Data System (ADS)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (<1° departure) and smooth (2.0 nm root mean square line-edge roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  6. Synthesis of nanoscale CN{sub x}/TiAlN multilayered coatings by ion-beam-assisted deposition

    SciTech Connect

    Cao, M.; Li, D. J.; Deng, X. Y.; Sun, X.

    2008-09-15

    CN{sub x}/TiAlN multilayered coatings with different nanoscale modulation periods and ratio of CN{sub x} within each period were prepared by ion-beam-assisted deposition at room temperature. Auger electron spectroscopy (AES), x-ray diffraction (XRD), and nanoindenter and a profiler were used to characterize the microstructure and mechanical properties of the coatings. The low-angle XRD pattern and AES indicated a well-defined multilayered structure of the coating. Although monolithic CN{sub x} and TiAlN coatings formed amorphous and nanocrystalline structures, respectively, the CN{sub x}/TiAlN multilayers exhibited coherent epitaxial growth due to the mutual growth-promoting effect at small CN{sub x} layer thickness (<0.6 nm). At modulation period {lambda}=2.83 nm and CN{sub x} thickness of 10% within each period, the multilayers exhibited strong TiAlN (111) and weak AlN (111) textures and showed the highest hardness (32 GPa), elastic modulus (409 GPa), and critical fracture load (65.7 mN)

  7. Ion beam-assisted template synthesis of nanowires on semiconducting substrate

    NASA Astrophysics Data System (ADS)

    Kaur, Jaskiran; Singh, Surinder; Kanjilal, Dinakar

    2013-08-01

    In this paper, we have studied the electrical properties of the randomly distributed metallic (Cu, Ni and Fe) nano-/micro wires on the silicon substrate. Deposition was carried out potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the Si substrate. Spin coated films were irradiated with 150 MeV Ni (+11) ions at a fluence of 5E8 ions/cm2, followed by Ultra-Violet (UV) irradiation and chemically etching in aqueous NaOH (6N, at room temperature). The size, shape and morphology of the synthesized nano-/micro structures is strongly dependent on the preparation conditions such as deposition potential, current density, electrolyte and etching conditions. Later, morphological and electrical properties of the so-deposited nano-/micro structures were studied.

  8. Quantitative dopant profiling of laser annealed focused ion beam-prepared silicon p-n junctions with nanometer-scale resolution

    SciTech Connect

    Cooper, David; Hartmann, Jean-Michel; Aventurier, Bernard; Templier, Francois; Chabli, Amal

    2008-11-03

    Silicon p-n junction specimens have been prepared by focused ion beam milling for examination using off-axis electron holography. By using 28 nS pulsed XeCl excimer laser irradiation we have reduced the total electrically ''inactive'' thickness in these specimens from 142 to 5 nm. A platinum layer has been sputtered onto the specimen surfaces to remove the build up of charge from the region of interest during examination. Subsequently, a value of the built in potential has been determined directly from a phase image which is consistent with theory.

  9. Real time x-ray studies during nanostructure formation on silicon via low energy ion beam irradiation using ultrathin iron films

    SciTech Connect

    El-Atwani, Osman; Suslova, Anastassiya; Gonderman, Sean; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2012-12-24

    Real time grazing incidence small angle x-ray scattering and x-ray fluorescence (XRF) are used to elucidate nanodot formation on silicon surfaces during low energy ion beam irradiation of ultrathin iron-coated silicon substrates. Four surface modification stages were identified: (1) surface roughening due to film erosion, (2) surface smoothing and silicon-iron mixing, (3) structure formation, and (4) structure smoothing. The results conclude that 2.5 Multiplication-Sign 10{sup 15} iron atoms in a 50 nm depth triggers surface nanopatterning with a correlated nanodots distance of 25 nm. Moreover, there is a wide window in time where the surface can have correlated nanostructures even after the removal of all the iron atoms from the sample as confirmed by XRF and ex-situ x-ray photoelectron spectroscopy (XPS). In addition, in-situ XPS results indicated silicide formation, which plays a role in the structure formation mechanism.

  10. Oxygen ion-beam microlithography

    DOEpatents

    Tsuo, Y. Simon

    1991-01-01

    A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

  11. Oxygen ion-beam microlithography

    DOEpatents

    Tsuo, Y.S.

    1991-08-20

    A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.

  12. Laser and optical system for laser assisted hydrogen ion beam stripping at SNS

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Rakhman, A.; Menshov, A.; Webster, A.; Gorlov, T.; Aleksandrov, A.; Cousineau, S.

    2017-03-01

    Recently, a high-efficiency laser assisted hydrogen ion (H-) beam stripping was successfully carried out in the Spallation Neutron Source (SNS) accelerator. The experiment was not only an important step toward foil-less H- stripping for charge exchange injection, it also set up a first example of using megawatt ultraviolet (UV) laser source in an operational high power proton accelerator facility. This paper reports in detail the design, installation, and commissioning result of a macro-pulsed multi-megawatt UV laser system and laser beam transport line for the laser stripping experiment.

  13. Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

    NASA Technical Reports Server (NTRS)

    Hartley, F.; Malek, C.; Neogi, J.

    2001-01-01

    The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

  14. Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

    NASA Technical Reports Server (NTRS)

    Hartley, F.; Malek, C.; Neogi, J.

    2001-01-01

    The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

  15. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

    SciTech Connect

    Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; Fowlkes, Jason D.; Tan, Shida; Livengood, Richard; Magel, Gregory A.; Moore, Thomas M.; Rack, Philip D.

    2016-10-04

    Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.

  16. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

    SciTech Connect

    Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; Fowlkes, Jason D.; Tan, Shida; Livengood, Richard; Magel, Gregory A.; Moore, Thomas M.; Rack, Philip D.

    2016-10-04

    Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.

  17. The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

    NASA Astrophysics Data System (ADS)

    Sasaki, T.; Yoshida, N.; Takahashi, M.; Tomita, M.

    2008-12-01

    In order to determine an appropriate incident angle of low-energy (350-eV) oxygen ion beam for achieving the highest sputtering rate without degradation of depth resolution in SIMS analysis, a delta-doped sample was analyzed with incident angles from 0° to 60° without oxygen bleeding. As a result, 45° incidence was found to be the best analytical condition, and it was confirmed that surface roughness did not occur on the sputtered surface at 100-nm depth by using AFM. By applying the optimized incident angle, sputtering rate becomes more than twice as high as that of the normal incident condition.

  18. Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials.

    PubMed

    Wu, Jean-Yee; Lee, Cheng-Chung

    2006-05-20

    Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide (SiO2) films. The SiO2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman-Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO2 films show excellent optical properties with extra-low extinction coefficients (below 2x10(-5)) and have no water absorption. When the working gas is O2 for the ion-assisted source, the deposited SiO2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.

  19. Fundamental reliability of 1.5-nm-thick silicon oxide gate films grown at 150 deg. C by modified reactive ion beam deposition

    SciTech Connect

    Yamada, Hiroshi

    2008-01-15

    The reliability of 1.5-nm-thick silicon oxide gate films grown at 150 deg. C by modified reactive ion beam deposition (RIBD) with in situ pyrolytic-gas passivation (PGP) using N{sub 2}O and NF{sub 3} was investigated. RIBD uses low-energy-controlled reactive, ionized species and potentializes low-temperature film growth. Although the oxide films were grown at a low temperature of 150 deg. C, their fundamental indices of reliability, such as the time-dependent dielectric breakdown lifetime and interface state density, were almost equivalent to those of oxide films grown at 850 deg. C using a furnace. This is probably due to localized interfacial N and F atoms. The number density of interfacial N atoms was about seven times larger than that for the furnace-grown oxide films, and this is a key factor for improving the reliability through the compensation of residual inconsistent-state bonding sites.

  20. Influence of 700 °C vacuum annealing on fracture behavior of micro/nanoscale focused ion beam fabricated silicon structures

    NASA Astrophysics Data System (ADS)

    Goshima, Yoshiharu; Fujii, Tatsuya; Inoue, Shozo; Namazu, Takahiro

    2016-06-01

    In this paper, we describe the influence of 700 °C vacuum annealing on strength and fracture behavior of micro- and nano-scale Si structures fabricated by focused ion beam (FIB). Si nanowires (NWs) made from silicon-on-nothing (SON) membrane are fabricated using FIB. Microscale Si specimens are fabricated by conventional micromachining technologies and FIB. These specimens are tensioned to failure using specially developed microelectromechanical systems (MEMS) device and thin-film tensile tester, respectively. The mean fracture strengths of the nano- and microscale specimens are 5.6 and 1.6 GPa, respectively, which decrease to 2.9 and 0.9 GPa after vacuum annealing at 700 °C for only 10 s. These strength values do not vary with increasing annealing time. Fracture origin and its behavior are discussed in the light of fracture surface and FIB damage layer observations.

  1. Investigation of the mechanism of impurity assisted nanoripple formation on Si induced by low energy ion beam erosion

    SciTech Connect

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.; Ganesan, V.

    2015-01-14

    A detailed mechanism of the nanoripple pattern formation on Si substrates generated by the simultaneous incorporation of pure Fe impurities at low energy (1 keV) ion beam erosion has been studied. To understand and clarify the mechanism of the pattern formation, a comparative analysis of the samples prepared for various ion fluence values using two complimentary methods for nanostructure analysis, atomic force microscopy, and grazing incidence small angle x-ray scattering has been done. We observed that phase separation of the metal silicide formed during the erosion does not precede the ripple formation. It rather concurrently develops along with the ripple structure. Our work is able to differentiate among various models existing in the literature and provides an insight into the mechanism of pattern formation under ion beam erosion with impurity incorporation.

  2. Composition and Bonding in Amorphous Carbon Films Grown by Ion Beam Assisted Deposition: Influence of the Assistance Voltage

    SciTech Connect

    Albella, J.M.; Banks, J.C.; Climent-Font, A.; Doyle, B.L.; Gago, R.; Jimenez, I.; Terminello, L.J.

    1998-11-12

    Amorphous carbon films have been grown by evaporation of graphite with concurrent Ar+ ions bombardment assistance. The ion energy has been varied between 0-800 V while keeping a constant ion to carbon atom arrival ratio. Film composition and density were determined by ion scattering techniques (RBS and ERDA), indicating a negligible hydrogen content and a density dependence with the assistance voltage. The bonding structure of the films has been studied by Raman and X-ray Absorption Near-Edge (XANES) spectroscopy. Different qualitative effects have been found depending on the ion energy range. For ion energies below 300 eV, there is a densification of the carbon layer due to the increase in the sp3 content. For ion energies above 300 eV sputtering phenomena dominate over densification, and thinner films are found with increasing assistance voltage until no film is grown over 600 V. The films with the highest SP3 content are grown with intermediate energies between 200-300 V.

  3. Monolithic integration of a lithium niobate microresonator with a free-standing waveguide using femtosecond laser assisted ion beam writing

    PubMed Central

    Fang, Zhiwei; Xu, Yingxin; Wang, Min; Qiao, Lingling; Lin, Jintian; Fang, Wei; Cheng, Ya

    2017-01-01

    We demonstrated integrating a high quality factor lithium niobate microdisk resonator with a free-standing membrane waveguide. Our technique is based on femtosecond laser direct writing which produces the pre-structure, followed by focused ion beam milling which reduces the surface roughness of sidewall of the fabricated structure to nanometer scale. Efficient light coupling between the integrated waveguide and microdisk was achieved, and the quality factor of the microresonator was measured as high as 1.67 × 105. PMID:28358135

  4. Influence of the process parameters on the growth of YSZ-layers prepared by Ion Beam Assisted Deposition (IBAD)

    NASA Astrophysics Data System (ADS)

    Knierim, A.; Auer, R.; Geerk, J.; Lierk, Fuli. Y.; Linker, G.; Meyer, O.; Schweiss, P.; Smithey, R.; Reiner, J.

    1997-05-01

    Cubic yttria stabilized zirconia (YSZ) thin films were grown on amorphous quartz, r-plane sapphire and stainless steel substrates by ion beam sputtering from a planar target under simultaneous ion bombardment (IBAD) during film growth and sputtering employing the inverted cylindrical magnetron (ICM) gun. The formation and modification of preferred orientations was studied by X-ray diffraction and TEM investigations as a function of different deposition parameters like substrate temperature, total pressure, deposition rate, ion beam energy and current. A preferred (100)-orientation could be achieved on untextured substrates by ICM-deposition at substrate temperatures above 800°C and by IBAD without external heating of the substrates. In-plane orientation of YSZ films on untextured substrates was only achieved with IBAD for an ion impact angle αs between 30° and 70°. For αs = 55° the best mosaic spread was observed. The observation of significantly smaller texture distribution widths for epitaxially post-deposited material than measured at the basic YSZ buffer layer was found to be due to a gradual improvement of YSZ growth under ion bombardment with increasing layer thickness.

  5. Ion Beam Propulsion Study

    NASA Technical Reports Server (NTRS)

    2008-01-01

    The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

  6. Pulsed ion beam source

    DOEpatents

    Greenly, John B.

    1996-01-01

    An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.

  7. Influence of Ag thickness on structural, optical, and electrical properties of ZnS/Ag/ZnS multilayers prepared by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Leng, Jian; Yu, Zhinong; Xue, Wei; Zhang, Ting; Jiang, Yurong; Zhang, Jie; Zhang, Dongpu

    2010-10-01

    The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function of Ag layer thickness. The characteristics of ZAZ multilayer are significantly improved up insertion of optimal Ag thickness between ZnS layers. The results show that due to bombardment of Ar ion beam, distinct Ag islands evolve into continuous Ag films at a thin Ag thickness of about 4 nm. The thinner Ag film as a thickness of 2 nm leads to high sheet resistance and low transmittance for the interface scattering induced by the Ag islands or noncontinuous films; and when the Ag thickness is over 4 nm, the ZAZ multilayer exhibits a remarkably reduced sheet resistance between 7-80 Ω/sq for the increase in carrier concentration and mobility of Ag layer, and a high transmittance over 90% for the interference phenomena of multilayers and low absorption and surface scattering of Ag layer. The ZAZ multilayer with 14 nm Ag film has a figure of merit up to 6.32×10-2 Ω-1, an average transmittance over 92% and a sheet resistance of 7.1 Ω/sq. The results suggest that ZAZ film has better optoelectrical properties than conditional indium tin oxide single layer.

  8. Study of pattern transition in nanopatterned Si(100) produced by impurity-assisted low-energy ion-beam erosion

    NASA Astrophysics Data System (ADS)

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.

    2017-04-01

    In this work, formation of self-organized Si nanostructures induced by pure Fe incorporation during normal incidence low-energy (1keV) Ar^+ ion bombardment is presented. It has been observed that the incorporation of Fe affects the evolution of the surface topography. The addition of Fe generates pronounced nanopatterns, such as dots, ripples and combinations of dots and ripples. The orientation of the ripple wave vector of the patterns formed is found to be in a direction normal to the Fe flow. The nanoripples with wavelength of the order of 39 nm produced is expected to be the lowest wavelength of the patterns reported on ion-beam-eroded structures under the incorporation of metallic impurities as per our knowledge. From the AFM and GISAXS analysis, it has been confirmed that the ripples formed are asymmetric in nature. The effect of the concentration of the Fe on morphological transition of the patterns has been studied using Rutherford backscattering measurements.

  9. Ion beam texturing

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

  10. Ion Beam Simulator

    SciTech Connect

    Kalvas, Taneli

    2005-11-08

    IBSimu(Ion Beam Simulator) is a computer program for making two and three dimensional ion optical simulations. The program can solve electrostatic field in a rectangular mesh using Poisson equation using Finite Difference method (FDM). The mesh can consist of a coarse and a fine part so that the calculation accuracy can be increased in critical areas of the geometry, while most of the calculation is done quickly using the coarse mesh. IBSimu can launch ion beam trajectories into the simulation from an injection surface or fomo plasma. Ion beam space charge of time independent simulations can be taken in account using Viasov iteration. Plasma is calculated by compensating space charge with electrons having Boltzmann energy distribution. The simulation software can also be used to calculate time dependent cases if the space charge is not calculated. Software includes diagnostic tools for plotting the geometry, electric field, space charge map, ion beam trajectories, emittance data and beam profiles.

  11. Pulsed ion beam source

    DOEpatents

    Greenly, John B.

    1997-01-01

    An improved pulsed ion beam source having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center.

  12. The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Kabyshev, A. V.; Konusov, F. V.; Pavlov, S. K.; Remnev, G. E.

    2016-02-01

    The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.

  13. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs.

    PubMed

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Chung, Sung-Min; Lee, In-Seop; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho

    2009-08-01

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 degrees C and 450 degrees C heat treatment of the coating layer.

  14. Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1 - xGexH) films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Bhan, Mohan Krishan; Malhotra, L. K.; Kashyap, Subhash C.

    1989-09-01

    Thin films of hydrogenated amorphous silicon-germanium (a-Si1-xGex: H) alloys have been prepared by reactive ion beam sputtering of a composite target of silicon and germanium. The dependence of the deposition rate, conductivity-temperature variation, optical absorption coefficient, refractive index, imaginary part of the dielectric constant, hydrogen content, and infrared (IR) absorption spectra on germanium content (x) are reported and analyzed. For a typical composition—a-Si28Ge72:H (x=0.72), the effect of beam voltage, H2:Ar flow ratio, and substrate temperature on the material properties have also been investigated. For the films prepared with increasing x, the expected behavior of a decrease in both hydrogen content and band gap and an increase in the electrical conductivity have been observed. The films prepared at x>0.80 are found to be more homogeneous than the films deposited at 0.0

  15. Ion beam nano-engineering of erbium doped silicon for enhanced light emission at 1.54 microns

    NASA Astrophysics Data System (ADS)

    Naczas, Sebastian

    Erbium doped silicon is of great interest as a potential light source in Silicon Photonics research due to its light emission at 1.54 mum, which corresponds to the minimal loss of optical transmission in silica fibers for telecommunications. In this thesis a basic mechanism for excitation and de-excitation of Er in Si is reviewed. Based on such fundamental understanding, an innovative approach is proposed and implemented to improve Er luminescence properties through the formation of metal nanoparticles via impurity gettering in Si nanocavities. The first part of the work demonstrates the use of ion implantation combined with thermal treatments for forming Ag nanoparticles in the vicinity of Er luminescence centers in Si. The utilization of standard semiconductor fabrication equipment and moderate thermal budgets make this approach fully compatible with Si CMOS technologies. The presence of Ag nanoparticles leads to an enhancement in the Er photoluminescence intensity, its excitation cross section and the population of optically active Er, possibly due to the surface plasmon excitation effects related to Ag nanoparticles. The resulting structures were characterized by Hydrogen depth profiling (NRA), Rutherford backscattering spectroscopy (RBS), Photoluminescence (PL), Transmission electron microscopy (TEM). In order to optimize the Er luminescence properties in such a system it is necessary to understand how the sample conditions affect the formation of Ag nanoparticles in Si. Therefore in the second part of this project we investigate the role of surface oxide in point defect generation and recombination, and the consequence on nanocavity formation and defect retention in Si. Investigation of the surface oxide effects on nanocavity formation in hydrogen implanted silicon and the influence of resultant nanocavities on diffusion and gettering of implanted silver atoms. Two sets of Si samples were prepared, depending on whether the oxide layer was etched off before

  16. Ion-beam technologies

    SciTech Connect

    Fenske, G.R.

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  17. Pulsed ion beam source

    DOEpatents

    Greenly, J.B.

    1997-08-12

    An improved pulsed ion beam source is disclosed having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center. 12 figs.

  18. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-01-01

    process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P+ beam implantation at 5 keV is also presented. With implantation dose of around 1016 cm-2, the electron concentration is about 2.5 x 1018 cm-3 and electron mobility is around 200 cm2/V•s. To demonstrate the suitability of scanning FIB lithography for the manufacture of integrated circuit devices, SOI MOSFET fabrication using the maskless, resistless ion beam lithography is demonstrated. An array of microcolumns can be built by stacking multi-aperture electrode and insulator layers. Because the multicusp plasma source can achieve uniform ion density over a large area, it can be used in conjunction with the array of microcolumns, for massively parallel FIB processing to achieve reasonable exposure throughput.

  19. Ion beam mixing by focused ion beam

    NASA Astrophysics Data System (ADS)

    Barna, Árpád; Kotis, László; Lábár, János L.; Osváth, Zoltán; Tóth, Attila L.; Menyhárd, Miklós; Zalar, Anton; Panjan, Peter

    2007-09-01

    Si amorphous (41 nm)/Cr polycrystalline (46 nm) multilayer structure was irradiated by 30 keV Ga+ ions with fluences in the range of 25-820 ions/nm2 using a focused ion beam. The effect of irradiation on the concentration distribution was studied by Auger electron spectroscopy depth profiling, cross-sectional transmission electron microscopy, and atomic force microscopy. The ion irradiation did not result in roughening on the free surface. On the other hand, the Ga+ irradiation produced a strongly mixed region around the first Si/Cr interface. The thickness of mixed region depends on the Ga+ fluence and it is joined to the pure Cr matrix with an unusual sharp interface. With increasing fluence the width of the mixed region increases but the interface between the mixed layer and pure Cr remains sharp. TRIDYN simulation failed to reproduce this behavior. Assuming that the Ga+ irradiation induces asymmetric mixing, that is during the mixing process the Cr can enter the Si layer, but the Si cannot enter the Cr layer, the experimental findings can qualitatively be explained.

  20. Focused ion beam system

    DOEpatents

    Leung, K.; Gough, R.A.; Ji, Q.; Lee, Y.Y.

    1999-08-31

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

  1. Focused ion beam system

    SciTech Connect

    Leung, K.; Gough, R.A.; Ji, Q.; Lee, Y.Y.

    1999-08-31

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

  2. Ion beam surface modification

    NASA Technical Reports Server (NTRS)

    Dwight, D. W.

    1982-01-01

    The essential details of a study on the practical applications and mechanisms of polymer sputtering via Argon ion impact are summarized. The potential to modify the properties of polymer surfaces to improve their adherence, durability, biocompatibility, or other desirable properties by ion beam sputtering was emphasized. Ion beam milling can be of benefit as an analytical tool to obtain composition versus depth information. Ion impact from a directed ion gun source specifically etches polymer structures according to their morphologies, therefore this technique may be useful to study unknown or new morphological features. Factors addressed were related to: (1) the texture that arises on a polymer target after ion impact; (2) the chemistry of the top surface after ion impact; (3) the chemistry of sputtered films of polymeric material deposited on substrates placed adjacent to targets during ion impact; and (4) practical properties of textured polymer targets, specifically the wettability and adhesive bonding properties.

  3. Focused ion beam system

    DOEpatents

    Leung, Ka-Ngo; Gough, Richard A.; Ji, Qing; Lee, Yung-Hee Yvette

    1999-01-01

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

  4. Corrosion resistance for biomaterial applications of TiO2 films deposited on titanium and stainless steel by ion-beam-assisted sputtering.

    PubMed

    Pan, J; Leygraf, C; Thierry, D; Ektessabi, A M

    1997-06-05

    The high corrosion resistance and good biocompatibility of titanium and its alloys are due to a thin passive film that consists essentially of titanium dioxide. There is increasing evidence, however, that under certain conditions extensive titanium release may occur in vivo. An ion-beam-assisted sputtering deposition technique has been used to deposit thick and dense TiO2 films on titanium and stainless steel surfaces. In this study, using the following measurements these TiO2 films have been investigated in a phosphate-buffered saline solution: (1) open-circuit potential versus time of exposure, (2) electrochemical impedance spectroscopy, (3) potentiodynamic polarization, and (4) Mott-Schottky plot. A higher electrical film resistance, lower passive current density, and lower donor density (in the order of 10(15) cm-3) have been measured for the sputter-deposited oxide film on titanium in contrast to the naturally formed passive oxide film on titanium (donor density in the order of 10(20) cm-3). The improved corrosion protection of the sputter-deposited oxide film can be explained by a low defect concentration and, consequently, by a slow mass transport process across the film. As opposed to TiO2 on titanium, a deviation from normal n-type semiconducting Mott-Schottky behavior was observed for TiO2 on stainless steel.

  5. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-04-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 1010 cm-2) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

  6. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    SciTech Connect

    Nishiwaki, M.; Ueda, K. Asano, H.

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  7. Method for Simulating the Thickness Distribution of a Cubic Boron Nitride Film Deposited on a Curved Substrate using Ion-beam-assisted Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Valizadeh, R.; Colligon, J. S.; Kanematsu, H.; Morisato, K.

    A method for simulating the thickness distribution of cubic boron nitride (cBN) films deposited on a curved substrate using ion-beam-assisted vapor deposition (IBAD) is established and discussed. The deposition conditions are (i) boron arriving rate is 3.2 Å/s, (ii) ion current density is in the range 600-1600 μA/cm2, and (iii) gas composition fed into the ion source is 36% N2 + Ar. It was found that, due to simultaneous deposition and sputtering, the boron resputtering yield (which depends on the ion incident angle during cBN deposition) estimated from experimental data was higher than that of the boron sputtering yield of the BN films with a density of 3.482 g/cm3 calculated by the TRIM code. Using the above empirical boron resputtering yield, it is estimated that in the case of static coating, cBN films would not be formed when the incident angle is more than 40°. However, with continuous waving, the distribution of film thickness improves and the results are consistent with the experimental results. This estimation also agrees with the experimental results of discrete waving deposition within an allowable margin of error

  8. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    SciTech Connect

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul; Wiedwald, Ulf

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  9. Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944 nm high power diode laser

    NASA Astrophysics Data System (ADS)

    Ghadimi-Mahani, A.; Farsad, E.; Goodarzi, A.; Tahamtan, S.; Abbasi, S. P.; Zabihi, M. S.

    2015-11-01

    Single-layer and multi-layer coatings were applied on the surface of diode laser facets as mirrors. This thin film mirrors were designed, deposited, optimized and characterized. The effects of mirrors on facet passivation and optical properties of InGaAs/AlGaAs/GaAs diode lasers were investigated. High-Reflective (HR) and Anti-Reflective (AR) mirrors comprising of four double-layers of Al2O3/Si and a single layer of Al2O3, respectively, were designed and optimized by Macleod software for 944 nm diode lasers. Optimization of Argon flow rate was studied through Alumina thin film deposition by Ion Beam Assisted Deposition (IBAD) for mirror improvement. The nanostructured HR and AR mirrors were deposited on the front and back facet of the laser respectively, by IBAD system under optimum condition. Atomic Force Microscope (AFM), Vis-IR Spectrophotometer, Field Emission Scanning Electron Microscopy (FESEM) and laser characterization Test (P-I) were used to characterize various properties of mirrors and lasers. AFM images show mirror's root mean square roughness is nearly 1 nm. The Spectrophotometer results of the front facet transmission and the back facet reflection are in good agreement with the simulation results. Optical output power (P) versus driving current (I) characteristics, measured before and after coating the facet, revealed a significant output power enhancement due to optimized AR and HR optical coatings on facets.

  10. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching.

    PubMed

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-12-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(-2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

  11. Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Fisher, B. L.; Balachandran, U.

    2002-07-01

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was ≈3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 °C during deposition. RMS roughness of ≈3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) φ-scan FWHM was 13.2° and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7°. An ≈10 nm thick CeO2 buffer layer was deposited on the YSZ film at 800 °C before YBCO films were ablated by pulsed laser deposition at 780 °C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM ≈ 7° was observed in YBCO films. Tc = 90 K, with sharp transition, and transport Jc of ≈2.2 × 106 A cm-2 were observed in a 0.5 μm thick, 5 mm wide, and 1 cm long sample at 77 K in self-field.

  12. Intense ion beam generator

    DOEpatents

    Humphries, Jr., Stanley; Sudan, Ravindra N.

    1977-08-30

    Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation.

  13. Ion beam generating apparatus

    DOEpatents

    Brown, Ian G.; Galvin, James

    1987-01-01

    An ion generating apparatus utilizing a vacuum chamber, a cathode and an anode in the chamber. A source of electrical power produces an arc or discharge between the cathode and anode. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma is directed to an extractor which separates the electrons from the plasma, and accelerates the ions to produce an ion beam.

  14. Ion beam analysis

    SciTech Connect

    Robertson, J.D. )

    1990-01-01

    A new ion beam analysis facility has recently been installed at a Van de Graaff accelerator. Its use is expected to support many energy and environmental research projects. Material composition and spatial distribution analyses at the facility are based upon Rutherford backscattering spectrometry, particle-induced X-ray emission, and particle-induced gamma-ray emission analysis. An overview of these three techniques is presented in this article.

  15. Ion beam analysis of sialon ceramics

    NASA Astrophysics Data System (ADS)

    Vickridge, I. C.; Brown, I. W. M.; Ekström, T. C.; Trompetter, W. J.

    1996-09-01

    Sialons, or silicon-aluminium-oxy-nitrides, are a family of materials that have exceptional high temperature mechanical and tribological properties, but which are susceptible to oxidation. Ion beam analysis is an ideal tool to study the composition of the altered surface layer of sialons after oxidation. In particular simultaneous detection of gamma rays, charged particles, and X-rays induced by 1.4 MeV deuterons allows an almost complete picture of the composition to be obtained.

  16. Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

    NASA Astrophysics Data System (ADS)

    Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

    2016-10-01

    Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

  17. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  18. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  19. Ion beam accelerator system

    NASA Technical Reports Server (NTRS)

    Aston, Graeme (Inventor)

    1984-01-01

    A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids (16, 18) with multiple pairs of aligned holes positioned to direct a group of beamlets (20) along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam (14). An accelerator electrode device (22) downstream from the extraction grids, is at a much lower potential than the grids to accelerate the combined beam.

  20. Ion beam accelerator system

    NASA Technical Reports Server (NTRS)

    Aston, G. (Inventor)

    1981-01-01

    A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids with multiple pairs of aligned holes positioned to direct a group of beamlets along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam. An accelerator electrode device downstream from the extraction grids is at a much lower potential than the grids to accelerate the combined beam. The application of the system to ion implantation is mentioned.

  1. ITEP MEVVA ion beam for rhenium silicide production

    SciTech Connect

    Kulevoy, T.; Seleznev, D.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Yakushin, P.; Petrenko, S.; Gerasimenko, N.; Medetov, N.; Zaporozhan, O.

    2010-02-15

    The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

  2. Nanometer scale patterning using focused ion beam milling

    SciTech Connect

    Petit, D.; Faulkner, C.C.; Johnstone, S.; Wood, D.; Cowburn, R.P.

    2005-02-01

    We report on the performance of focused ion beam (FIB) milling in order to produce nanometer scale devices. Resolution issues have been systematically studied as a function of emission current and working distance, by imaging single pixel lines FIB milled into thin bismuth films deposited on oxidized silicon. The ion beam profile has been measured, and by carefully optimizing the milling conditions, 40 nm Hall probe sensors have been fabricated.

  3. Self-lubricating surfaces by ion-beam processing. Final report, 11 August 1989-16 March 1990

    SciTech Connect

    Bhattacharya, R.S.

    1990-06-01

    The primary research objective of this work was to develop self-lubricating surface and coatings through direct ion implantations and a combined process of electron beam evaporation and ion implantation. The latter is most commonly referred in the literature as ion beam assisted deposition (IBAD). IBAD of bi-layer coating of (Calcium Fluoride/Silver) on (Silicon nitride) resulted in a very adherent coating that exhibited significantly low friction and wear characteristic at both room and elevated temperatures (800 deg C). Ion beam assisted titanium dioxide coating on M50 steel showed significantly improved friction and wear characteristics at room temperature. Ion beam assisted Cadmium Oxide coating lowered the friction coefficient of M50 steel 400C. The ion beam assisted deposition technique for fabricating self-lubricating surfaces appears to have good technical feasibility for defense and industrial applications, owing to the overall simplicity and scalability of the technique. The initial applications are likely to be in the seals and bearings of engines, variable stator vanes, etc., in gas turbine engine technology.

  4. Heavy ion beam probing

    SciTech Connect

    Hickok, R L

    1980-07-01

    This report consists of the notes distributed to the participants at the IEEE Mini-Course on Modern Plasma Diagnostics that was held in Madison, Wisconsin in May 1980. It presents an overview of Heavy Ion Beam Probing that briefly describes the principles and discuss the types of measurements that can be made. The problems associated with implementing beam probes are noted, possible variations are described, estimated costs of present day systems, and the scaling requirements for large plasma devices are presented. The final chapter illustrates typical results that have been obtained on a variety of plasma devices. No detailed calculations are included in the report, but a list of references that will provide more detailed information is included.

  5. Introduction to Ion Beam Therapy

    SciTech Connect

    Martisikova, Maria

    2010-01-05

    Presently, ion beam therapy reaches an increasing interest within the field of radiation therapy, which is caused by the promising clinical results obtained in the last decades. Ion beams enable higher dose conformation to the tumor and increased sparing of the surrounding tissue in comparison to the standard therapy using high energy photons. Heavy ions, like carbon, offer in addition increased biological effectiveness, which makes them suitable for treatment of radioresistant tumors. This contribution gives an overview over the physical and biological properties of ion beams. Common fundamental principles of ion beam therapy are summarized and differences between standard therapy with high energy photons, proton and carbon ion therapy are discussed. The technologies used for the beam production and delivery are introduced, with emphasis to the differences between passive and active beam delivery systems. The last part concentrates on the quality assurance in ion therapy. Specialties of dosimetry in medical ion beams are discussed.

  6. Electromagnetic ion beam instabilities

    NASA Technical Reports Server (NTRS)

    Gary, S. P.; Foosland, D. W.; Smith, C. W.; Lee, M. A.; Goldstein, M. L.

    1984-01-01

    The linear theory of electromagnetic instabilities driven by an energetic ion beam streaming parallel to a magnetic field in a homogeneous Vlasov plasma is considered. Numerical solutions of the full dispersion equation are presented. At propagation parallel to the magnetic field, there are four distinct instabilities. A sufficiently energetic beam gives rise to two unstable modes with right-hand polarization, one resonant with the beam, the other nonresonant. A beam with sufficiently large T (perpendicular to B)/T (parallel to B) gives rise to the left-hand ion cyclotron anisotropy instability at relatively small beam velocities, and a sufficiently hot beam drives unstable a left-hand beam resonant mode. The parametric dependences of the growth rates for the three high beam velocity instabilities are presented here. In addition, some properties at oblique propagation are examined. It is demonstrated that, as the beam drift velocity is increased, relative maxima in growth rates can arise at harmonics of the ion cyclotron resonance for both right and left elliptically polarized modes.

  7. Ion beam and laser induced surface modifications

    NASA Astrophysics Data System (ADS)

    Appleton, B. R.

    1984-01-01

    The capabilities of energetic ion beam and laser processing of surfaces are reviewed. Ion implantation doping, ion beam mixing, and laser and electron beam processing techniques are capable of producing new and often unique surface properties. The inherent control of these techniques has led to significant advances in our ability to tailor the properties of solids for a wide range of technological applications. Equally important, these techniques have allowed tests of fundamental materials interactions under conditions not heretofore achievable and have resulted in increased understanding of a broad range of materials phenomena. These include new metastable phase formation, rapid nucleation and crystal growth kinetics, amorphous metals and metaglasses, supersaturated solid solutions and substitutional alloys, interface interactions, solute trapping, laser-assisted chemical modifications, and a host of other.

  8. Applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Gelerinter, E.; Spielberg, N.

    1980-01-01

    Wire adhesion in steel belted radial tires; carbon fibers and composite; cold welding, brazing, and fabrication; hydrogen production, separation, and storage; membrane use; catalysis; sputtering and texture; and ion beam implantation are discussed.

  9. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  10. Ion Beam Modification of Materials

    SciTech Connect

    Averback, B; de la Rubia, T D; Felter, T E; Hamza, A V; Rehn, L E

    2005-10-10

    This volume contains the proceedings of the 14th International Conference on Ion Beam Modification of Materials, IBMM 2004, and is published by Elsevier-Science Publishers as a special issue of Nuclear Instruments and Methods B. The conference series is the major international forum to present and discuss recent research results and future directions in the field of ion beam modification, synthesis and characterization of materials. The first conference in the series was held in Budapest, Hungary, 1978, and subsequent conferences were held every two years at locations around the Globe, most recently in Japan, Brazil, and the Netherlands. The series brings together physicists, materials scientists, and ion beam specialists from all over the world. The official conference language is English. IBMM 2004 was held on September 5-10, 2004. The focus was on materials science involving both basic ion-solid interaction processes and property changes occurring either during or subsequent to ion bombardment and ion beam processing in relation to materials and device applications. Areas of research included Nanostructures, Multiscale Modeling, Patterning of Surfaces, Focused Ion Beams, Defects in Semiconductors, Insulators and Metals, Cluster Beams, Radiation Effects in Materials, Photonic Devices, Ion Implantation, Ion Beams in Biology and Medicine including New Materials, Imaging, and Treatment.

  11. Helicon plasma generator-assisted surface conversion ion source for the production of H(-) ion beams at the Los Alamos Neutron Science Center.

    PubMed

    Tarvainen, O; Rouleau, G; Keller, R; Geros, E; Stelzer, J; Ferris, J

    2008-02-01

    The converter-type negative ion source currently employed at the Los Alamos Neutron Science Center (LANSCE) is based on cesium enhanced surface production of H(-) ion beams in a filament-driven discharge. In this kind of an ion source the extracted H(-) beam current is limited by the achievable plasma density which depends primarily on the electron emission current from the filaments. The emission current can be increased by increasing the filament temperature but, unfortunately, this leads not only to shorter filament lifetime but also to an increase in metal evaporation from the filament, which deposits on the H(-) converter surface and degrades its performance. Therefore, we have started an ion source development project focused on replacing these thermionic cathodes (filaments) of the converter source by a helicon plasma generator capable of producing high-density hydrogen plasmas with low electron energy. In our studies which have so far shown that the plasma density of the surface conversion source can be increased significantly by exciting a helicon wave in the plasma, and we expect to improve the performance of the surface converter H(-) ion source in terms of beam brightness and time between services. The design of this new source and preliminary results are presented, along with a discussion of physical processes relevant for H(-) ion beam production with this novel design. Ultimately, we perceive this approach as an interim step towards our long-term goal, combining a helicon plasma generator with an SNS-type main discharge chamber, which will allow us to individually optimize the plasma properties of the plasma cathode (helicon) and H(-) production (main discharge) in order to further improve the brightness of extracted H(-) ion beams.

  12. Thickness dependence of magnetic properties and giant magneto-impedance effect in amorphous Co73Si12B15 thin films prepared by Dual-Ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Wang, San-sheng; Hu, Teng; He, Tong-fu; Chen, Zi-yu; Yi, Zhong; Meng, Li-Fei

    2017-03-01

    Dual-Ion Beam Assisted Deposition is a suitable method for the preparation of giant magneto-impedance (GMI) materials. In this paper, Co73Si12B15 thin films with different thicknesses were prepared by Dual-Ion Beam Assisted Deposition, and the influences of film thickness on magnetic properties and GMI effect were investigated. It was found that the asymmetric magnetic hysteresis loop in the prepared Co73Si12B15 thin films occurs at ambient temperature, and the shift behavior of hysteresis loop associated with film thickness. With the film thickness increasing, the values of shift field and coercive field and other parameters such as remanence and shift ratio appeared complex variation. At a certain frequency, the large GMI effect is only observed in some films, which have good magnetic properties including low coercivity, low remanence ratio and high shift ratio. The results indicated that the thickness dependence of magnetic properties nonlinearly determined the GMI effect in Co73Si12B15 thin films.

  13. Stencil mask technology for ion beam lithography

    NASA Astrophysics Data System (ADS)

    Ehrmann, Albrecht; Huber, Sabine; Kaesmaier, Rainer; Oelmann, Andreas B.; Struck, Thomas; Springer, Reinhard; Butschke, Joerg; Letzkus, Florian; Kragler, Karl; Loeschner, Hans; Rangelow, Ivo W.

    1998-12-01

    Ion beam lithography is one of the most promising future lithography technologies. A helium or hydrogen ion beam illuminates a stencil membrane mask and projects the image with 4X reduction to the wafer. The development of stencil masks is considered to be critical for the success of the new technology. Since 1997, within the European Ion Projection Lithography MEDEA (Microelectronic Devices for European Applications) project silicon stencil masks based on a wafer- flow process are developed. They are produced in a conventional wafer line. Six inch SOI (silicon-on-insulator) wafers are patterned with an e-beam wafer writing tool, then trenches are etched by plasma etching. Afterwards, the membrane is etched by wet etch using the SOI-oxide layer as an etch stop. The last step is to add a coating layer, which is sputtered onto the membrane. It protects the mask against ion irradiation damage. For metrology and inspection, methods used for conventional chromium masks as well as new techniques are investigated. Results from placement measurements on the Leica LMS IPRO tool will be presented. Finally, methods for CD measurement, defect inspection, repair and in-situ-cleaning in the stepper will be discussed, including experimental information of first tests.

  14. Stability of colliding ion beams

    SciTech Connect

    Foote, E.A.; Kulsrud, R.M.

    1980-11-01

    We determine conditions for stability of two identical colliding ion beams in the presence of neutralizing electrons, but no background ions. Such a situation is envisioned for the Counterstreaming Ion Torus. The ion beams are taken to be Maxwellian in their frames of reference. The approximation of electrostatic and electromagnetic modes is made. The stability of the electrostatic modes depends on the relation between the ion electron temperature ratio and the relative beam velocities. The stability of the electromagnetic mode depends on the relation between the ion plasma ..beta.. and the relative beam velocities.

  15. Variable-Energy Ion Beams For Modification Of Surfaces

    NASA Technical Reports Server (NTRS)

    Chutjian, Ara; Hecht, Michael H.; Orient, Otto J.

    1989-01-01

    Beam of low-energy negative oxygen ions used to grow layer of silicon dioxide on silicon. Beam unique both in purity, contains no molecular oxygen or other charged species, and in low energy, which is insufficient to damage silicon by physically displacing atoms. Low-energy growth accomplished with help of ion-beam apparatus. Directs electrons into crosswise stream of gas, generating stream of negative ions. Pair of charged plates separates ions from accompanying electrons and diverts ion beam to target - silicon substrate. Diameter of beam at target 0.5 to 0.75 cm. Promises useful device to study oxidation of semiconductors and, in certain applications, to replace conventional oxidation processes.

  16. Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

    SciTech Connect

    El-Atwani, Osman; Gonderman, Sean; Suslova, Anastassiya; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2013-03-28

    We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.

  17. Production and characterization of ion beams from magnetically insulated diodes

    SciTech Connect

    Neri, J.M.

    1982-01-01

    The operation of magnetically insulated diodes and the characteristics of the resulting ion beams have been investigated using two pulsed power generators, LYNX at the 10/sup 9/W power level, and Neptune at the 10/sup 11/W power level. LYNX is a small magnetically insulated diode driven directly by a Marx bank. By changing the material used as the surface flashover ion source, the majority ion species generated by the diode could be chosen. Ion beams produced so far by this device are: protons, lithium, boron, carbon, sodium, strontium, and barium. Typical beam parameters for the ion beams are peak energies of 300 keV, current densities of 40 to 60 A/cm/sup 2/, and pulse durations of 300 to 400 nsec. The ion beam uniformity, divergence, and reproducibility were shown to be a function of the surface flashover source geometry. Finally, the LYNX ion beam was also used to anneal silicon crystals and other materials science experiments. The diode used on the Neptune generator was designed to study virtual cathode formation in a high power magnetically insulated diode. The physical cathode was replaced by electrons that ExB drift on the applied magnetic field lines. It was found that the best electrode configuration is one in which the electrons are required to only undergo the Hall drift to form the cathode. The divergence of the ion beam was examined with time-dependent and time-integrated shadowbox diagnostics. It was found that the intrinsic divergence of the ion beam does not have a strong directional dependence.

  18. Ion-beam machining of millimeter scale optics.

    PubMed

    Shanbhag, P M; Feinberg, M R; Sandri, G; Horenstein, M N; Bifano, T G

    2000-02-01

    An ion-beam microcontouring process is developed and implemented for figuring millimeter scale optics. Ion figuring is a noncontact machining technique in which a beam of high-energy ions is directed toward a target substrate to remove material in a predetermined and controlled fashion. Owing to this noncontact mode of material removal, problems associated with tool wear and edge effects, which are common in conventional machining processes, are avoided. Ion-beam figuring is presented as an alternative for the final figuring of small (<1-mm) optical components. The depth of the material removed by an ion beam is a convolution between the ion-beam shape and an ion-beam dwell function, defined over a two-dimensional area of interest. Therefore determination of the beam dwell function from a desired material removal map and a known steady beam shape is a deconvolution process. A wavelet-based algorithm has been developed to model the deconvolution process in which the desired removal contours and ion-beam shapes are synthesized numerically as wavelet expansions. We then mathematically combined these expansions to compute the dwell function or the tool path for controlling the figuring process. Various models have been developed to test the stability of the algorithm and to understand the critical parameters of the figuring process. The figuring system primarily consists of a duo-plasmatron ion source that ionizes argon to generate a focused (approximately 200-microm FWHM) ion beam. This beam is rastered over the removal surface with a perpendicular set of electrostatic plates controlled by a computer guidance system. Experimental confirmation of ion figuring is demonstrated by machining a one-dimensional sinusoidal depth profile in a prepolished silicon substrate. This profile was figured to within a rms error of 25 nm in one iteration.

  19. Ion beams for materials analysis

    SciTech Connect

    Bird, J.R.; Williams, J.S.

    1988-01-01

    The contents of this book are: Concepts and Principles of Ion Beam Analysis; Overview of Techniques and Equipment; High Energy Ion Scattering Spectrometry; Nuclear Reactions. Ion Induced X-Ray Emission; Channeling; Depth Profiling of Surface Layers During Ion Bombardment; Low Energy Ion Scattering from Surfaces and Interfaces; Microprobe Analysis; and Critical Assessment of Analysis Capabilities.

  20. Response of silicon multistrip detectors and a cesium iodide scintillator to a calcium ion beam of 0.5 GeV/u

    NASA Astrophysics Data System (ADS)

    Codino, A.; Miozza, M.; Brunetti, M. T.; Checcucci, B.; Federico, C.; Grimani, C.; Lanfranchi, M.; Macchiaiolo, T.; Menichelli, M.; Maffei, P.; Plouin, F.; Vocca, H.

    1997-02-01

    We have constructed and operated charge preamplifiers for silicon strip detectors with a dynamic range extending from fractions of minimum ionising particle (MIP) up to 16 124 MIPs. These silicon detectors combined with time-of-flight counters and cesium iodide scintillator form a segment of the VENUS detector that has been exposed to a calcium beam of 0.5 GeV/u at the GSI accelerator. The aim of the instrument is the identification of all nuclides of the periodic table of the elements. Measurements of electronic noise, cross-talk among channels and energy deposit resolutions in various experimental conditions for silicon detectors are given. The measured light output of the CsI(Tl) crystal induced by calcium is compared with that extrapolated from lower-energy data of various nuclide species determined in other experiments. The charge resolution for calcium ions, determined by the {dE }/{dχ } detectors and TOF counters of time resolution of 55 ± 7 ps, amounts to 0.42 charge units (rms). Improvements in ion discrimination with respect to the present detector configuration are considered.

  1. Fabrication of high-density BiFeO3 nanodot and anti-nanodot arrays by anodic alumina template-assisted ion beam etching

    NASA Astrophysics Data System (ADS)

    Tian, Guo; Zhao, Lina; Lu, Zengxing; Yao, Junxiang; Fan, Hua; Fan, Zhen; Li, Zhongwen; Li, Peilian; Chen, Deyang; Zhang, Xiaoyan; Qin, Minhui; Zeng, Min; Zhang, Zhang; Dai, Jiyan; Gao, Xingsen; Liu, Jun-Ming

    2016-12-01

    Efficient and cost-competitive fabrication of high-quality ferroelectric and multiferroic nanostructures is of general interest. In this work, a top-down nano-patterning technique is developed by the Ar+ ion beam etching in combination with the sacrificed ultrathin anodic alumina (AAO) mask. This technique is demonstrated by preparation of the epitaxial BiFeO3 (BFO) nanostructures of various geometries, including nanodot and anti-nanodot arrays. The lateral dot size is as small as ∼60 nm and an ultrahigh dot density of ∼60 Gbit/inch2 is achieved. It is revealed that the etching process involves sequential shape evolution of both the AAO mask and the underlying BFO film, resulting in the nanodots and anti-nanodots arrays of various geometries. The as-etched BFO nanodots array exhibits well-established ferroelectric domain structures and reversible polarization switching, as examined by piezoresponse force microscopy (PFM). It is suggested that this technique is extendable to fabrication of a wide range of functional oxide nanostructures for potential nanoelectronic applications.

  2. Ion-beam Plasma Neutralization Interaction Images

    SciTech Connect

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-09

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

  3. Ion beam microtexturing of surfaces

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1981-01-01

    Some recent work in surface microtecturing by ion beam sputtering is described. The texturing is accomplished by deposition of an impurity onto a substrate while simultaneously bombarding it with an ion beam. A summary of the theory regarding surface diffusion of impurities and the initiation of cone formation is provided. A detailed experimental study of the time-development of individual sputter cones is described. A quasi-liquid coating was observed that apparently reduces the sputter rate of the body of a cone compared to the bulk material. Experimental measurements of surface diffusion activation energies are presented for a variety of substrate-seed combinations and range from about 0.3 eV to 1.2 eV. Observations of apparent crystal structure in sputter cones are discussed. Measurements of the critical temperature for cone formation are also given along with a correlation of critical temperature with substrate sputter rate.

  4. Ion beam effects in diacetylenes

    NASA Astrophysics Data System (ADS)

    Elman, B. S.; Blackburn, Gary F.; Thakur, M. K.; Sandman, D. J.; Samuelson, L. A.; Kenneson, D. G.

    Due to their unique backbone structure and crystalline organization, polydiacetylenes (PDAs) are considered to be prototype one-dimensional systems. They were shown to have properties considered important to realize concepts of all-optical signal processing. Macroscopic, nearly defect-free, highly anisotropic PDA single crystals are prepared by exposure of diacteylene monomers to various forms of radiation. These materials can also be prepared as thin film crystals and Langmuir-Blodgett (LB) assemblies. We have studied and compared the effects of ion beam irradiation on different configurations of diacetylenes: bulk crystals, thin films and LB structures. Exposure of monomeric diacetylene films to very low fiuence ion beams results in their polymerization and in the formation of good quality anisotropic films of controlled thickness. Significant changes in optical and electrical properties of PDAs were observed and studied by optical absorption and do temperature dependent conductivity measurements.

  5. Ion beam probe diagnostic system

    NASA Astrophysics Data System (ADS)

    Hickok, R. L.; Jennings, W. C.; Woo, J. T.; Connor, K. A.

    1980-07-01

    Tokomak plasmas suitable for diagnostic development were produced in RENTOR following technological improvements in the vacuum chamber and discharge cleaning systems. Secondary ion signals were obtained from the heavy ion beam probe on RENTOR leading to initial estimates of the plasma space potential, which appears to vary by several hundred volts during the plasma pulse. The principle of measuring space potential in a minimum-B geometry was established using an ion gun mounted at the center of the ALEX baseball coil. The neutral beam probe was installed for measuring the space potential using actual secondary ion signals from a hollow cathode arc in ALEX and preliminary tests have begun. The ion beam test stand was significantly altered to allow more flexibility in testing energy analyzers, ion guns, and ion focusing concepts.

  6. Ion beam inertial confinement target

    DOEpatents

    Bangerter, Roger O.; Meeker, Donald J.

    1985-01-01

    A target for implosion by ion beams composed of a spherical shell of frozen DT surrounded by a low-density, low-Z pusher shell seeded with high-Z material, and a high-density tamper shell. The target has various applications in the inertial confinement technology. For certain applications, if desired, a low-density absorber shell may be positioned intermediate the pusher and tamper shells.

  7. Reactive ion beam figuring of optical aluminium surfaces

    NASA Astrophysics Data System (ADS)

    Bauer, Jens; Frost, Frank; Arnold, Thomas

    2017-03-01

    Ultra-smooth and arbitrarily shaped reflective optics are necessary for further progress in EUV/XUV lithography, x-ray and synchrotron technology. As one of the most important technological mirror optic materials, aluminium behaves in a rather difficult way in ultra-precision machining with such standard techniques as diamond-turning and subsequent ion beam figuring (IBF). In particular, in the latter, a strong surface roughening is obtained. Hence, up to now it has not been possible to attain the surface qualities required for UV or just visible spectral range applications. To overcome the limitations mainly caused by the aluminium alloy structural and compositional conditions, a reactive ion beam machining process using oxygen process gas is evaluated. To clarify the principle differences in the effect of oxygen gas contrary to oxygen ions on aluminium surface machining, we firstly focus on chemical-assisted ion beam etching (CAIBE) and reactive ion beam etching (RIBE) experiments in a phenomenological manner. Then, the optimum process route will be explored within a more quantitative analysis applying the concept of power spectral density (PSD) for a sophisticated treatment of the surface topography. Eventually, the surface composition is examined by means of dynamic secondary ion mass spectrometry (SIMS) suggesting a characteristic model scheme for the chemical modification of the aluminium surface during oxygen ion beam machining. Monte Carlo simulations were applied to achieve a more detailed process conception.

  8. Radioactive Ion Beams and Radiopharmaceuticals

    NASA Astrophysics Data System (ADS)

    Laxdal, R. E.; Morton, A. C.; Schaffer, P.

    2014-02-01

    Experiments performed at radioactive ion beam facilities shed new light on nuclear physics and nuclear structure, as well as nuclear astrophysics, materials science and medical science. The many existing facilities, as well as the new generation of facilities being built and those proposed for the future, are a testament to the high interest in this rapidly expanding field. The opportunities inherent in radioactive beam facilities have enabled the search for radioisotopes suitable for medical diagnosis or therapy. In this article, an overview of the production techniques and the current status of RIB facilities and proposals will be presented. In addition, accelerator-generated radiopharmaceuticals will be reviewed.

  9. Ion beam deposited protective films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1981-01-01

    Single or dual ion beam sources were used to deposit thin films for different applications. Metal and metal oxide films were evaluated as protective coatings for the materials. Film adherence was measured and the most promising films were then tested under environments similar to operating conditions. It was shown that some materials do protect die material (H-13 steel) and do reduce thermal fatigue. Diamondlike films have many useful applications. A series of experiments were conducted to define and optimize new approaches to the manufacture of such films. A dual beam system using argon and methane gases was developed to generate these films.

  10. Friction of self-lubricating surfaces by ion beam techniques

    NASA Astrophysics Data System (ADS)

    Bhattacharya, R. S.; Rai, A. K.

    1992-05-01

    UES, Inc. conducted a research and development program designed to establish conditions for ion implantation/mixing of suitable additives into the surfaces of bulk ceramics and metals for obtaining self-lubricating low friction and wear characteristics. The substrates considered were ZrO2, Al2O3, Si3N4, steel, and Ni-base superalloy. The lubricant additives chosen were BaF2/CaF2Ag, MoS2, WS2, and B2O3. The initial tasks of the program were to synthesis these lubricant compounds by co-implantation of constituent elements if sufficient beams of desired elements were obtained. The final tasks were to investigate high energy (MeV) ion mixing of deposited coatings as well as to investigate ion beam assisted deposition using low energy ion beams. It was shown that MoS2 can be synthesized by co-implantation of Mo(+) and S(+) in ceramic materials with appropriate choice of energies to obtain nearly overlapping depth profiles. The sliding life of DC magnetron sputtered MoS(2) films of thicknesses approximately 7500 A on ceramic materials such as sapphire, Si3N4 and ZrO3 were improved by ten to thousand fold after 2 Mev Ag(+) ion mixing. Ion beam assisted deposition (IBAD) and ion beam mixing were utilized to fabricate self-lubricating coatings of CaF2/Ag and BaF/CaF2/Ag composites.

  11. High temperature coefficient of resistance achieved by ion beam assisted sputtering with no heat treatment in V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf)

    SciTech Connect

    Vardi, Naor; Sharoni, Amos

    2015-11-15

    Thermal imaging based on room temperature bolometer sensors is a growing market, constantly searching for improved sensitivity. One important factor is the temperature coefficient of resistance (TCR), i.e., the sensitivity of the active material. Herein, the authors report the improved TCR properties attainable by the “ion beam assisted deposition” method for room temperature deposition. V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf) thin-film alloys were fabricated on 1 μm thermal SiO{sub 2} atop Si (100) substrates by reactive magnetron cosputtering at room temperature using a low energy ion source, aimed at the film, to insert dissociated oxygen species and increase film density. The authors studied the influence of deposition parameters such as oxygen partial pressure, V to M ratio, and power of the plasma source, on resistance and TCR. The authors show high TCR (up to −3.7% K{sup −1}) at 300 K, and excellent uniformity, but also an increase in resistance. The authors emphasize that samples were prepared at room temperature with no heat treatment, much simpler than common processes that require annealing at high temperatures. So, this is a promising fabrication route for uncooled microbolometers.

  12. Ferroelectric and ferromagnetic properties of epitaxial BiFeO{sub 3}-BiMnO{sub 3} films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

    SciTech Connect

    Xiong, J.; Matias, V.; Jia, Q. X.; Tao, B. W.; Li, Y. R.

    2014-05-07

    Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature.

  13. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes with chemically assisted ion beam etched facets

    NASA Astrophysics Data System (ADS)

    Becerra, Daniel L.; Kuritzky, Leah Y.; Nedy, Joseph; Saud Abbas, Arwa; Pourhashemi, Arash; Farrell, Robert M.; Cohen, Daniel A.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

    2016-02-01

    Continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

  14. ION BEAM FOCUSING MEANS FOR CALUTRON

    DOEpatents

    Backus, J.G.

    1959-06-01

    An ion beam focusing arrangement for calutrons is described. It provides a virtual focus of origin for the ion beam so that the ions may be withdrawn from an arc plasma of considerable width providing greater beam current and accuracy. (T.R.H.)

  15. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  16. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-07

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.

  17. Ion-Beam Analysis of Airborne Pollution

    NASA Astrophysics Data System (ADS)

    Harrington, Charles; Gleason, Colin; Schuff, Katie; Battaglia, Maria; Moore, Robert; Turley, Colin; Labrake, Scott; Vineyard, Michael

    2010-11-01

    An undergraduate laboratory research program in ion-beam analysis (IBA) of atmospheric aerosols is being developed to study pollution in the Capitol District and Adirondack Mountains of New York. The IBA techniques applied in this project include proton induced X-ray emission (PIXE), proton induced gamma-ray emission (PIGE), Rutherford backscattering (RBS), and proton elastic scattering analysis (PESA). These methods are well suited for studying air pollution because they are quick, non-destructive, require little to no sample preparation, and capable of investigating microscopic samples. While PIXE spectrometry is used to analyze most elements from silicon to uranium, the other techniques are being applied to measure some of the remaining elements and complement PIXE in the study of aerosols. The airborne particulate matter is collected using nine-stage cascade impactors that separate the particles according to size and the samples are bombarded with proton beams from the Union College 1.1-MV Pelletron Accelerator. The reaction products are measured with SDD X-ray, Ge gamma-ray, and Si surface barrier charged particle detectors. Here we report on the progress we have made on the PIGE, RBS, and PESA analysis of aerosol samples.

  18. Cluster ion beam process technology 20 years of R&D history

    NASA Astrophysics Data System (ADS)

    Yamada, Isao

    2007-04-01

    More than 20 years have passed since the author first began to explore the feasibility of processing by gas cluster ion beams at the Ion Beam Engineering Experimental Laboratory of Kyoto University. Processes employing ions of gaseous material clusters comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals and dielectrics, to assisted formation of thin films with nano-scale accuracy and to other surface modification applications.

  19. Focused Ion Beam Technology for Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Reithmaier, J. P.; Bach, L.; Forchel, A.

    2003-08-01

    High-resolution proximity free lithography was developed using InP as anorganic resist for ion beam exposure. InP is very sensitive on ion beam irradiation and show a highly nonlinear dose dependence with a contrast function comparable to organic electron beam resists. In combination with implantation induced quantum well intermixing this new lithographic technique based on focused ion beams is used to realize high performance nano patterned optoelectronic devices like complex coupled distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers.

  20. Kinetic Simulations of Ion Beam Neutralization

    SciTech Connect

    Wang, Joseph

    2010-05-21

    Ion beam emission/neutralization is one of the most fundamental problems in spacecraft plasma interactions and electric propulsion. Although ion beam neutralization is readily achieved in experiments, the understanding of the underlying physical process remains at a rather primitive level. No theoretical or simulation models have convincingly explained the detailed neutralization mechanism, and no conclusions have been reached. This paper presents a fully kinetic simulation of ion beam neutralization and plasma beam propagation and discusses the physics of electron-ion coupling and the resulting propagation of a neutralized mesothermal plasma.

  1. Development of polyatomic ion beam system using liquid organic materials

    NASA Astrophysics Data System (ADS)

    Takaoka, G. H.; Nishida, Y.; Yamamoto, T.; Kawashita, M.

    2005-08-01

    We have developed a new type of polyatomic ion beam system using liquid organic materials such as octane and ethanol, which consists of a capillary type of nozzle, an ionizer, a mass-separator and a substrate holder. Ion current extracted after ionization was 430 μA for octane and 200 μA for ethanol, respectively. The mass-analysis was realized using a compact E × B mass filter, and the mass-analyzed ion beams were transferred toward the substrate. The ion current density at the substrate was a few μA/cm2 for the mass-separated ion species. Interactions of polyatomic ion beams with silicon (Si) surfaces were investigated by utilizing the ellipsometry measurement. It was found that the damaged layer thickness irradiated by the polyatomic ions with a mass number of about 40 was smaller than that by Ar ion irradiation at the same incident energy and ion fluence. The result indicated that the rupture of polyatomic ions occurred upon its impact on the Si surface with an incident energy larger than a few keV. In addition, the chemical modification of Si surfaces such as wettability could be achieved by adjusting the incident energy for the ethanol ions, which included all the fragment ions.

  2. Ion beam modification of injection moulded polymere materials

    NASA Astrophysics Data System (ADS)

    Wolf, G. K.; Kersten, H. J.

    1998-05-01

    Ion beam based treatments and processes are an ecologically friendly alternative for the metallization of polymers. Nowadays mainly chemical and electrochemical and plasma assisted techniques are used. In this contribution the copper metallization of high temperature thermoplasts using ion beam assisted deposition (IBAD) was studied. The applications in mind were magnetic shielding of cases for sensors. The influence of ion beam intensity and energy, deposition rate, preconditioning and substrate material on the Cu adhesion was investigated. As materials PPS (Polyphenylene sulfide) and LCP (Liquid Crystal Polymer) with different filling materials were used. It could be shown that the adhesion reacts very critical to the type of polymer and the type and concentration of filling material. The IBAD parameters giving best results are I/A ratios of 0.005-0.01 and energies of 0.5-2 keV. The highest adhesion force (≈27 N/mm 2) was measured on PPS. For LCP thin Ti interlayers increased the adhesion force ≈50% up to values above 10 N/mm 2.

  3. Study of surface reactions in plasma etching using mass-analyzed ion beams

    NASA Astrophysics Data System (ADS)

    Karahashi, Kazuhiro

    2001-10-01

    We have constructed a new mass-analyzed low-energy ion beam etching apparatus (MALIEA) for investigate desorption products from silicon or silicon dioxide surfaces during CFx+ (x=1-3) ion bombardments. In this paper, we describe this newly developed ion beam apparatus, and results of CF3+ ion bombardment experiments. The apparatus consists of an ion beam source, an ultra high vacuum (UHV) process chamber, and a detector chamber. As there are three differentially pumping stages between the source and process chamber, the process chamber was maintained at UHV condition during all experiments. Therefore, experiments were not affected by contaminations form the ion source. Pure ion beams such as F+, CF+, CF2+ and CF3+, were obtained with good mass resolutions by a 90\\x81‹ mass-selecting electromagnet. The sample is mounted on a manipulator, located at the foci of a hemispherical energy analyzer and x-ray sources to allow chemical analysis of irradiated surfaces. The desorption products and scattered ions were detected by a rotatable differentially pumped quadrupole mass spectrometer (QMS). In experiments of CF3+ irradiation on silicon dioxide surface\\x81@at 1000eV, etching rate was about 1.1 atoms/ion, and silicon flourides for etching products were detected by QMS. Therefore, it is possible to investigate the interaction between silicon or silicon dioxide surfaces and low-energy CFx+(x=1-3) ions with a well-defined energy. This work was supported by NEDO.

  4. Review of Cluster Ion Beam Facilities and Technology

    NASA Astrophysics Data System (ADS)

    Yamada, Isao; Toyoda, Noriaki

    2009-03-01

    The paper reviews the development of cluster ion beam technology, including historical background, fundamental characteristics of cluster ion to solid surface interactions, emerging industrial applications, and identification of some of the significant events which occurred as the technology has evolved into what it is today. Processes employing ions of clusters comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications.

  5. Negative Ion Beam Extraction and Emittance

    SciTech Connect

    Holmes, Andrew J. T.

    2007-08-10

    The use of magnetic fields to both aid the production of negative ions and suppress the co-extracted electrons causes the emittance and hence the divergence of the negative ion beam to increase significantly due to the plasma non-uniformity from jxB drift. This drift distorts the beam-plasma meniscus and experimental results of the beam emittance are presented, which show that non-uniformity causes the square of the emittance to be proportional to the 2/3 power of the extracted current density. This can cause the divergence of the negative ion beam to be significantly larger than its positive ion counterpart. By comparing results from positive and negative ion beam emittances from the same source, it is also possible to draw conclusions about their vulnerability to magnetic effects. Finally emittances of caesiated and un-caesiated negative ion beams are compared to show how the surface and volume modes of production interact.

  6. Biomedical applications of ion-beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Gibbons, D. F.; Vankampen, C. L.; Babbush, C. A.

    1979-01-01

    Microscopically-rough surface texture of various biocompatible alloys and polymers produced by ion-beam sputtering may result in improvements in response of hard or soft tissue to various surgical implants.

  7. Production of negatively charged radioactive ion beams

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Stracener, D. W.; Stora, T.

    2017-08-01

    Beams of short-lived radioactive nuclei are needed for frontier experimental research in nuclear structure, reactions, and astrophysics. Negatively charged radioactive ion beams have unique advantages and allow for the use of a tandem accelerator for post-acceleration, which can provide the highest beam quality and continuously variable energies. Negative ion beams can be obtained with high intensity and some unique beam purification techniques based on differences in electronegativity and chemical reactivity can be used to provide beams with high purity. This article describes the production of negative radioactive ion beams at the former holifield radioactive ion beam facility at Oak Ridge National Laboratory and at the CERN ISOLDE facility with emphasis on the development of the negative ion sources employed at these two facilities. ).

  8. Ion Beam Bombardment of Biological Tissue

    NASA Astrophysics Data System (ADS)

    Sangyuenyongpipat, S.; Yu, L. D.; Vilaithong, T.; Phanchaisri, B.; Anuntalabhochai, S.; Brown, I. G.

    2003-10-01

    While ion implantation has become a well-established technique for the surface modification of inorganic materials, the ion bombardment of cellular tissue has received little research attention. A program in ion beam bioengineering has been initiated at Chiang Mai University, and the ion beam induced transfer of plasmid DNA molecules into bacterial cells (E. coli) has been demonstrated. Subsequent work has been directed toward exploration of ion beam bombardment of plant cells in an effort to understand the possible mechanisms involved in the DNA transfer. In particular, ion beam bombardment of onion cells was carried out and the effects investigated. Among the novel features observed is the formation of "microcraters" - sub-micron surface features that could provide a pathway for the transfer of large molecules into the interior cell region. Here we describe our onion skin ion bombardment investigations.

  9. Biomedical applications of ion-beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Gibbons, D. F.; Vankampen, C. L.; Babbush, C. A.

    1979-01-01

    Microscopically-rough surface texture of various biocompatible alloys and polymers produced by ion-beam sputtering may result in improvements in response of hard or soft tissue to various surgical implants.

  10. Ion beam assisted deposition of tribological coatings

    SciTech Connect

    Sartwell, B.D.

    1993-01-01

    TiN coatings 5 micrometers thick were deposited in UHV IBAD chamber onto M50 and Si substrates over a wide range of R (Ar-ion-to-Ti-atom ratio) values. Sputtering reduced the actual thickness at high R values, with two out of every three deposited Ti atoms being removed at R = 0.7. Because of charge exchange neutralization, it was possible to obtain coatings in the UHV IBAD system with properties equivalent to those deposited in the high vacuum IBAD system by using a higher apparent R value. Unless the extent of the charge exchange neutralization is known, it will not be possible to duplicate coating properties. Adhesion of the thick TiN coating deposited at R - 0.5 was equivalent to a magnetron sputtered TiN coating. Thick Cr[sub 2]O[sub 3] coatings were deposited onto M50 and Si substrates and wear testing was initiated. At high R values, sputtering prevented chemisorption of oxygen at surface. The wear process eliminated most of the surface topography.

  11. Ion beam assisted deposition of tribological coatings

    SciTech Connect

    Sartwell, B.D.; Dillich, S.A.; Sprague, J.A.; Kant, R.A.; Smidt, F.A.

    1989-01-01

    During this period films prepared under a variety of processing conditions were examined by TEM to explore the relation between hardness and grain boundary porosity. It was found that porosity decreased (and hardness increased) as the Ar[sup +] ion to T atom arrival rate ratio increased. A systematic error in measuring film thickness under varying chamber pressures due to scattering of T atoms near substrate surface by Ar atoms from the ion gun was discovered and the apparatus was modified and recalibrated. Hardness measurements on thick TiN films (1.5-2.5[mu]m) deposited on an M50 steel and Si substrates were performed at 3 loads and compared to a 0.5[mu]m thick film. Effect of increasing R value on hardness was evident at all loads but film thicknesses in excess of 1.5Am were required to produce representative hardness values at 25 gr indent loads. Scratch test adhesion measurements performed on these thick films showed no indication of brittle fracture and no indication of decohesion at loads up to 100N, well above the critical load of 30 Newtons expected for a sputtered TiN film. Additional experiments on effect of residual pressure on film properties were initiated.

  12. Ion Beam Therapy in Europe

    NASA Astrophysics Data System (ADS)

    Kraft, Gerhard

    2009-03-01

    At present, seven facilities in Europe treat deep-seated tumors with particle beams, six with proton beams and one with carbon ions. Three of these facilities are in Moscow, St. Petersburg and Dubna, Russia. Other facilities include the TSL Uppsala, Sweden, CPO Orsay, France, and PSI Villigen, Switzerland, all for proton therapy, and GSI, Darmstadt, Germany, which utilizes carbon ions only. But only two of these facilities irradiate with scanned ion beams: the Paul Scherer Institute (PSI), Villigen (protons) and the Gesellschaft für Schwerionenforschung (GSI), Darmstadt. These two facilities are experimental units within physics laboratories and have developed the technique of intensity-modulated beam scanning in order to produce irradiation conforming to a 3-D target. There are three proton centers presently under construction in Munich, Essen and Orsay, and the proton facility at PSI has added a superconducting accelerator connected to an isocentric gantry in order to become independent of the accelerator shared with the physics research program. The excellent clinical results using carbon ions at National Institute of Radiological Science (NIRS) in Chiba and GSI have triggered the construction of four new heavy-ion therapy projects (carbon ions and protons), located in Heidelberg, Pavia, Marburg and Kiel. The projects in Heidelberg and Pavia will begin patient treatment in 2009, and the Marburg and Kiel projects will begin in 2010 and 2011, respectively. These centers use different accelerator designs but have the same kind of treatment planning system and use the same approach for the calculation of the biological effectiveness of the carbon ions as developed at GSI [1]. There are many other planned projects in the works. Do not replace the word "abstract," but do replace the rest of this text. If you must insert a hard line break, please use Shift+Enter rather than just tapping your "Enter" key. You may want to print this page and refer to it as a style

  13. Neurosurgical applications of ion beams

    NASA Astrophysics Data System (ADS)

    Fabrikant, Jacob I.; Levy, Richard P.; Phillips, Mark H.; Frankel, Kenneth A.; Lyman, John T.

    1989-04-01

    The program at Donner Pavilion has applied nuclear medicine research to the diagnosis and radiosurgical treatment of life-threatening intracranial vascular disorders that affect more than half a million Americans. Stereotactic heavy-charged-particle Bragg peak radiosurgery, using narrow beams of heavy ions, demonstrates superior biological and physical characteristics in brain over X-and γ-rays, viz., improved dose distribution in the Bragg peak and sharp lateral and distal borders and less scattering of the beam. Examination of CNS tissue response and alteration of cerebral blood-flow dynamics related to heavy-ion Bragg peak radiosurgery is carried out using three-dimensional treatment planning and quantitative imaging utilizing cerebral angiography, computerized tomography (CT), magnetic resonance imaging (MRI), cine-CT, xenon X-ray CT and positron emission tomography (PET). Also under examination are the physical properties of narrow heavy-ion beams for improving methods of dose delivery and dose distribution and for establishing clinical RBE/LET and dose-response relationships for human CNS tissues. Based on the evaluation and treatment with stereotactically directed narrow beams of heavy charged particles of over 300 patients, with cerebral angiography, CT scanning and MRI and PET scanning of selected patients, plus extensive clinical and neuroradiological followup, it appears that Stereotactic charged-particle Bragg peak radiosurgery obliterates intracranial arteriovenous malformations or protects against rebleeding with reduced morbidity and no mortality. Discussion will include the method of evaluation, the clinical research protocol, the Stereotactic neuroradiological preparation, treatment planning, the radiosurgery procedure and the protocol for followup. Emphasis will be placed on the neurological results, including the neuroradiological and clinical response and early and late delayed injury in brain leading to complications (including vasogenic edema

  14. Ion beam microtexturing and enhanced surface diffusion

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1982-01-01

    Ion beam interactions with solid surfaces are discussed with particular emphasis on microtexturing induced by the deliberate deposition of controllable amounts of an impurity material onto a solid surface while simultaneously sputtering the surface with an ion beam. Experimental study of the optical properties of microtextured surfaces is described. Measurements of both absorptance as a function of wavelength and emissivity are presented. A computer code is described that models the sputtering and ion reflection processes involved in microtexture formation.

  15. TXRF spectrometry at ion beam excitation

    NASA Astrophysics Data System (ADS)

    Egorov, V.; Egorov, E.; Afanas’ef, M.

    2017-02-01

    The work presents short discussion of TXRF and PIXE methods peculiarities. Taking into account of these peculiarities we elaborate the experimental scheme for TXRF measurements at ion beam excitation of characteristical fluorescence. The scheme is built on base of the planar X-ray waveguide-resonator with specific design. Features of the new experimental method and possibilities of Sokol-3 ion beam analytical complex were used for the method application in real measurements.

  16. Ion beam processing of advanced electronic materials

    SciTech Connect

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.; International Business Machines Corp., Yorktown Heights, NY . Thomas J. Watson Research Center; Oak Ridge National Lab., TN )

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

  17. Nuclear data for ion beam analysis applications

    NASA Astrophysics Data System (ADS)

    Dimitriou, Paraskevi; Semkova, Valentina; Zerkin, Viktor

    2017-09-01

    Nuclear data for Ion Beam Analysis have been compiled and disseminated by the Nuclear Data Section through the Ion Beam Analysis Nuclear Data Library (IBANDL) for over a decade. Recent efforts to enrich IBANDL with gamma-ray producing nuclear reaction cross sections, and to improve search and retrieval features are presented. The coordinated effort to produce reliable evaluated cross-section data for charged-particle reactions for a wider range of applications is also discussed.

  18. Computer simulation of ion beam analysis of laterally inhomogeneous materials

    NASA Astrophysics Data System (ADS)

    Mayer, M.

    2016-03-01

    The program STRUCTNRA for the simulation of ion beam analysis charged particle spectra from arbitrary two-dimensional distributions of materials is described. The code is validated by comparison to experimental backscattering data from a silicon grating on tantalum at different orientations and incident angles. Simulated spectra for several types of rough thin layers and a chessboard-like arrangement of materials as example for a multi-phase agglomerate material are presented. Ambiguities between back-scattering spectra from two-dimensional and one-dimensional sample structures are discussed.

  19. Ion beam-induced hydroxylation controls molybdenum disulfide growth

    NASA Astrophysics Data System (ADS)

    Bartolucci, Stephen F.; Kaplan, Daniel; Maurer, Joshua A.

    2017-06-01

    2D materials, such as graphene and transition metal dichalcogenides, are a promising class of nanomaterials for next generation electronics, photovoltaics, electrocatalysts, sensors, and optoelectronic devices. Molybdenum disulfide (MoS2) is of particular interest due to its direct bandgap in the visible spectrum, high electron mobility, and chemical stability. Here, we demonstrate that alterations in the density of surface hydroxyl groups on silicon dioxide substrates can control nucleation and growth in molybdenum disulfide thin films produced by atmospheric-pressure chemical vapor deposition. The extent of MoS2 nucleation is linearly correlated to the density of surface hydroxyl groups. Controlling the density of surface hydroxyl groups on the initial substrate provides a method of growing patterned molybdenum disulfide. Furthermore, we establish that the surface density of hydroxyl groups on silicon dioxide (SiO2) is altered using conventional gallium focused ion beam (FIB) patterning. Upon gallium-ion beam exposure, the number of hydroxyl groups generated on the surface is directly proportional to the ion dosage. This work establishes a means of patterning large-area monolayer MoS2 on silicon dioxide substrates, which is a critical step for realizing applications in imaging, catalysis, biosensing, chemical detection, electronics and optoelectronics.

  20. Mass spectrometer and methods of increasing dispersion between ion beams

    DOEpatents

    Appelhans, Anthony D.; Olson, John E.; Delmore, James E.

    2006-01-10

    A mass spectrometer includes a magnetic sector configured to separate a plurality of ion beams, and an electrostatic sector configured to receive the plurality of ion beams from the magnetic sector and increase separation between the ion beams, the electrostatic sector being used as a dispersive element following magnetic separation of the plurality of ion beams. Other apparatus and methods are provided.

  1. Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth

    SciTech Connect

    Groves, James R; De Paula, Raymond F; Hayes, Garrett H; Li, Joel B; Hammond, Robert H; Salleo, Alberto; Clemens, Bruce M

    2010-05-07

    We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

  2. Intense non-relativistic cesium ion beam

    SciTech Connect

    Lampel, M.C.

    1984-02-01

    The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm.

  3. Imaging nanophotonic modes of microresonators using a focused ion beam

    NASA Astrophysics Data System (ADS)

    Twedt, Kevin A.; Zou, Jie; Davanco, Marcelo; Srinivasan, Kartik; McClelland, Jabez J.; Aksyuk, Vladimir A.

    2016-01-01

    Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics, biosensing, microfludics, cavity optomechanics and optical frequency combs. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high-quality-factor resonances. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam. An ion beam (radius of ≈50 nm) induces a picometre-scale deformation of the resonator surface, which we detect through shifts in the optical resonance wavelengths. We map five modes of a silicon microdisk resonator (Q ≥ 20,000) with high spatial and spectral resolution. Our technique also enables in situ observation of ion implantation damage and relaxation dynamics in a silicon lattice.

  4. Imaging Nanophotonic Modes of Microresonators using a Focused Ion Beam

    PubMed Central

    Twedt, Kevin A.; Zou, Jie; Davanco, Marcelo; Srinivasan, Kartik; McClelland, Jabez J.; Aksyuk, Vladimir A.

    2016-01-01

    Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics1–3, biosensing4, microfludics5, and cavity optomechanics6–8. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes9 can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high quality factor resonances10,11. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam12. An ion beam (radius ≈50 nm) induces a picometer-scale dynamic deformation of the resonator surface, which we detect through a shift in the optical resonance wavelength. We map five modes of a silicon microdisk resonator (Q≥20,000) with both high spatial and spectral resolution. Our technique also enables in-situ observation of ion implantation damage and relaxation dynamics in a silicon lattice13,14. PMID:27087832

  5. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  6. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  7. Fundamental Concepts of Ion-Beam Processing

    NASA Astrophysics Data System (ADS)

    Averback, R. S.; Bellon, P.

    The basic concepts underlying the response of materials to ion-beam irradiation are outlined. These include the slowing of energetic ions, the creation of defects, sputtering, ion-beam mixing, the acceleration of kinetic processes, and phase transformations. Several examples are cited to illustrate how each of these concepts can be exploited to modify materials in ways not easily achieved, or not even possible, by more conventional processing methods. The chapter attempts to provide a physical understanding of the basic effects of ion-beam irradiation on materials, to enable readers in other areas of research to better understand the more technical chapters that follow, and to develop ideas relevant to their own disciplines. We provide references to more quantitative treatments of the topics covered here.

  8. Pseudo ribbon metal ion beam source

    SciTech Connect

    Stepanov, Igor B. Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

    2014-02-15

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

  9. TOPICAL REVIEW Dosimetry for ion beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Karger, Christian P.; Jäkel, Oliver; Palmans, Hugo; Kanai, Tatsuaki

    2010-11-01

    Recently, ion beam radiotherapy (including protons as well as heavier ions) gained considerable interest. Although ion beam radiotherapy requires dose prescription in terms of iso-effective dose (referring to an iso-effective photon dose), absorbed dose is still required as an operative quantity to control beam delivery, to characterize the beam dosimetrically and to verify dose delivery. This paper reviews current methods and standards to determine absorbed dose to water in ion beam radiotherapy, including (i) the detectors used to measure absorbed dose, (ii) dosimetry under reference conditions and (iii) dosimetry under non-reference conditions. Due to the LET dependence of the response of films and solid-state detectors, dosimetric measurements are mostly based on ion chambers. While a primary standard for ion beam radiotherapy still remains to be established, ion chamber dosimetry under reference conditions is based on similar protocols as for photons and electrons although the involved uncertainty is larger than for photon beams. For non-reference conditions, dose measurements in tissue-equivalent materials may also be necessary. Regarding the atomic numbers of the composites of tissue-equivalent phantoms, special requirements have to be fulfilled for ion beams. Methods for calibrating the beam monitor depend on whether passive or active beam delivery techniques are used. QA measurements are comparable to conventional radiotherapy; however, dose verification is usually single field rather than treatment plan based. Dose verification for active beam delivery techniques requires the use of multi-channel dosimetry systems to check the compliance of measured and calculated dose for a representative sample of measurement points. Although methods for ion beam dosimetry have been established, there is still room for developments. This includes improvement of the dosimetric accuracy as well as development of more efficient measurement techniques.

  10. Potential biomedical applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Van Kampen, C. L.; Babbush, C. A.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic prosthesis fixation, and dental implants.

  11. Potential biomedical applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Babbush, C. A.; Vankampen, C. L.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

  12. Focused ion beam source method and apparatus

    DOEpatents

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    2000-01-01

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  13. Potential biomedical applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Van Kampen, C. L.; Babbush, C. A.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic prosthesis fixation, and dental implants.

  14. Ion-beam technology and applications

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.; Robson, R. R.; Sovey, J. S.

    1977-01-01

    Ion propulsion research and development yields a mature technology that is transferable to a wide range of nonpropulsive applications, including terrestrial and space manufacturing. A xenon ion source was used for an investigation into potential ion-beam applications. The results of cathode tests and discharge-chamber experiments are presented. A series of experiments encompassing a wide range of potential applications is discussed. Two types of processes, sputter deposition, and erosion were studied. Some of the potential applications are thin-film Teflon capacitor fabrication, lubrication applications, ion-beam cleaning and polishing, and surface texturing.

  15. Focused-Ion-Beam Material Removal Rates

    DTIC Science & Technology

    1993-09-01

    AD-A270 852 SIll II 111111111 lillI I ARMY RESEARCH LABORATORY Focused -Ion-Beam Material Removal Rates by Bruce GeOl ARL-MR-1 14 September 1993 93...DATES COVERED September 1993 Summary, January 1991-present 4. TITLE AND SUBTITLE 5. FUNDING NUMBERS Focused -Ion-Beam Material Removal Rates PE: 91A 6...AUTHOR( S ) Bruce Geil 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION U.S. Army Research Laboratory REPORT NUMBER Attn

  16. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

    DOE PAGES

    Stanford, Michael G.; Lewis, Brett B.; Iberi, Vighter O.; ...

    2016-02-16

    Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposuremore » process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.« less

  17. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Iberi, Vighter O.; Fowlkes, Jason Davidson; Tan, Shida; Livengood, Rick; Rack, Philip D.

    2016-02-16

    Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.

  18. Adaptation of ion beam technology to microfabrication of solid state devices and transducers

    NASA Technical Reports Server (NTRS)

    Topich, J. A.

    1977-01-01

    It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

  19. Adaptation of ion beam technology to microfabrication of solid state devices and transducers

    NASA Technical Reports Server (NTRS)

    Topich, J. A.

    1978-01-01

    A number of areas were investigated to determine the potential uses of ion beam techniques in the construction of solid state devices and transducers and the packaging of implantable electronics for biomedical applications. The five areas investigated during the past year were: (1) diode-like devices fabricated on textured silicon; (2) a photolithographic technique for patterning ion beam sputtered PVC (polyvinyl chloride); (3) use of sputtered Teflon as a protective coating for implantable pressure sensors; (4) the sputtering of Macor to seal implantable hybrid circuits; and (5) the use of sputtered Teflon to immobilize enzymes.

  20. The role of space charge compensation for ion beam extraction and ion beam transport (invited)

    SciTech Connect

    Spädtke, Peter

    2014-02-15

    Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation.

  1. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  2. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  3. Silicon fluxes in the scrape-off layer plasma during silicon-assisted operation of TEXTOR

    NASA Astrophysics Data System (ADS)

    Rubel, M.; Wienhold, P.; Almqvist, N.; Emmoth, B.; Esser, H. G.; Könen, L.; von Seggern, J.; Winter, J.

    1995-04-01

    Surface collector probes were applied at TEXTOR for the investigation of silicon fluxes in the scrape-off layer during the first silicon-assisted (silane puffing, siliconization) operation of a tokamak. Probe exposures were made in order to measure the evolution of Si fluxes and the influence of silicon on the behaviour of other impurity fluxes like boron, oxygen and metals. Studies were performed under different conditions: heating mode, plasma density and gas filling. Comparative exposures were made before introduction of Si into the machine as well as immediately and long time after the siliconization. The exposed graphite samples were examined by surface analysis techniques, including Auger electron and Rutherford backscattering spectroscopies, nuclear reaction analysis and ultra-high resolution microscopies. The most important findings are concerned with: (i) the relation between silicon to carbon and silicon to oxygen in the deposits; (ii) the change in radial profiles of Si, B and D fluxes during consecutive stages of the silicon-assisted operation, and the retention of deuterium in the Si containing codeposited layers. The influence of plasma density on the fluxes is considered and gettering of oxygen by silicon is also addressed. Comparison is also made to the results of VUV spectroscopy signals of silicon and oxygen impurities in the plasma.

  4. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  5. Metal-assisted chemical etching of silicon: a review.

    PubMed

    Huang, Zhipeng; Geyer, Nadine; Werner, Peter; de Boor, Johannes; Gösele, Ulrich

    2011-01-11

    This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

  6. Applications of the Lithium Focused Ion Beam: Nanoscale Electrochemistry and Microdisk Mode Imaging

    NASA Astrophysics Data System (ADS)

    McGehee, William; Takeuchi, Saya; Michels, Thomas; Oleshko, Vladimir; Aksyuk, Vladimir; Soles, Christopher; McClelland, Jabez; CenterNanoscale Science; Technology at NIST Collaboration; Materials Measurement Laboratory at NIST Collaboration

    2016-05-01

    The NIST-developed lithium Focused-Ion-Beam (LiFIB) system creates a low-energy, picoampere-scale ion beam from a photoionized gas of laser-cooled atoms. The ion beam can be focused to a <30 nm spot and scanned across a sample. This enables imaging through collection of ion-induced secondary electrons (similar to SEM) as well as the ability to selectively deposit lithium-ions into nanoscale volumes in a material. We exploit this second ability of the LiFIB to selectively ''titrate'' lithium ions as a means of probing the optical modes in microdisk resonators as well as for exploring nanoscale, Li-ion electrochemistry in battery-relevant materials. We present an overview of both measurements, including imaging of the optical mode in a silicon microdisk and a comparison of FIB and electrochemical lithiation of tin.

  7. Focused ion beam micromilling and articles therefrom

    DOEpatents

    Lamartine, B.C.; Stutz, R.A.

    1998-06-30

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are disclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters. 6 figs.

  8. Focused ion beam micromilling and articles therefrom

    DOEpatents

    Lamartine, Bruce C.; Stutz, Roger A.

    1998-01-01

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are isclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters.

  9. Ion beam analysis techniques in interdisciplinary applications

    SciTech Connect

    Respaldiza, Miguel A.; Ager, Francisco J.

    1999-11-16

    The ion beam analysis techniques emerge in the last years as one of the main applications of electrostatic accelerators. A short summary of the most used IBA techniques will be given as well as some examples of applications in interdisciplinary sciences.

  10. Ion Beam Analysis Techniques in Interdisciplinary Applications

    SciTech Connect

    Respaldiza, Miguel A.; Ager, Francisco J.

    1999-12-31

    The ion beam analysis techniques emerge in the last years as one of the main applications of electrostatic accelerators. A short summary of the most used IBA techniques will be given as well as some examples of applications in interdisciplinary sciences.

  11. Future Directions in Ion Beam Therapy

    NASA Astrophysics Data System (ADS)

    Habermehl, Daniel; Combs, Stephanie; Debus, Jürgen

    There is a growing interest in ion beam therapy (IBT) worldwide which has led to an increasing number of new treatment facilities. This development is accompanied by intensive radiobiological, physical and clinical research of both proton therapy (PT) and carbon ion radiotherapy (CIRT). Current developments in IBT with high impact for future challenges will be summarized in this chapter.

  12. Ion beam parameters of a plasma accelerator

    SciTech Connect

    Nazarov, V.G.; Vinogradov, A.M.; Veselovzorov, A.N.; Efremov, V.K.

    1987-08-01

    The aim of this investigation was to determine the dependences of the current density, the energy, and the divergence of the ion beams of an UZDP-type source (a plasma accelerator with closed electron drift in the accelerator channel and an extended zone of ion acceleration) on the parameters which determine its performance, and to establish qualitative relationships between these values.

  13. Monte Carlo simulations of secondary electron emission due to ion beam milling

    DOE PAGES

    Mahady, Kyle; Tan, Shida; Greenzweig, Yuval; ...

    2017-07-01

    We present a Monte Carlo simulation study of secondary electron emission resulting from focused ion beam milling of a copper target. The basis of this study is a simulation code which simulates ion induced excitation and emission of secondary electrons, in addition to simulating focused ion beam sputtering and milling. This combination of features permits the simulation of the interaction between secondary electron emission, and the evolving target geometry as the ion beam sputters material. Previous ion induced SE Monte Carlo simulation methods have been restricted to predefined target geometries, while the dynamic target in the presented simulations makes thismore » study relevant to image formation in ion microscopy, and chemically assisted ion beam etching, where the relationship between sputtering, and its effects on secondary electron emission, is important. We focus on a copper target, and validate our simulation against experimental data for a range of: noble gas ions, ion energies, ion/substrate angles and the energy distribution of the secondary electrons. We then provide a detailed account of the emission of secondary electrons resulting from ion beam milling; we quantify both the evolution of the yield as high aspect ratio valleys are milled, as well as the emission of electrons within these valleys that do not escape the target, but which are important to the secondary electron contribution to chemically assisted ion induced etching.« less

  14. Ion beam and plasma jet based methods in ultra-precision optics manufacturing

    NASA Astrophysics Data System (ADS)

    Arnold, Th.; Boehm, G.; Paetzelt, H.; Pietag, F.

    2015-01-01

    Ion beam and plasma jet based techniques can be used in alternative machining processes for generating and finishing of ultra-precision optical surfaces. Since atomistic mechanisms are responsible for surface material modification, etching, and deposition, very high accuracy on the atomic level can be achieved. Various advanced techniques like pulse-width modulated ion beam figuring, sub-aperture reactive ion beam etching, or ion beam assisted structuring, planarization and smoothing technologies have been investigated aiming at precision on sub-nanometer height scale and lateral scales ranging over the full spatial wavelength range from nanometers to meters. Additionally, different atmospheric reactive plasma jet processes and plasma jet assisted process chains for generating, correction and smoothing of complex shaped optical surfaces like aspheres with large departures to best fit sphere or free forms exhibiting strong gradients have been developed in the last decade. In the paper an overview to the most recent trends of non-conventional ultra-precision optics processing is given and latest results of optics manufacturing are shown. Specific examples are given to demonstrate that form generation (e.g. for laser beam shaping optics) and surface finishing and polishing using atmospheric plasma jet tools are promising applications exhibiting advantages with respect to process efficiency and flexibility. Furthermore, the capabilities of ion beam surface figure correction using a new approach to control the tool function are demonstrated.

  15. Irradiation of Materials using Short, Intense Ion Beams

    NASA Astrophysics Data System (ADS)

    Seidl, Peter; Ji, Q.; Persaud, A.; Feinberg, E.; Silverman, M.; Sulyman, A.; Waldron, W. L.; Schenkel, T.; Barnard, J. J.; Friedman, A.; Grote, D. P.; Gilson, E. P.; Kaganovich, I. D.; Stepanov, A.; Zimmer, M.

    2016-10-01

    We present experiments studying material properties created with nanosecond and millimeter-scale ion beam pulses on the Neutralized Drift Compression Experiment-II at Berkeley Lab. The explored scientific topics include the dynamics of ion induced damage in materials, materials synthesis far from equilibrium, warm dense matter and intense beam-plasma physics. We describe the improved accelerator performance, diagnostics and results of beam-induced irradiation of thin samples of, e.g., tin and silicon. Bunches with >3x1010 ions/pulse with 1-mm radius and 2-30 ns FWHM duration and have been created. To achieve the short pulse durations and mm-scale focal spot radii, the 1.2 MeV He+ ion beam is neutralized in a drift compression section which removes the space charge defocusing effect during the final compression and focusing. Quantitative comparison of detailed particle-in-cell simulations with the experiment play an important role in optimizing the accelerator performance and keep pace with the accelerator repetition rate of <1/minute. This work was supported by the Office of Science of the US Department of Energy under contracts DE-AC0205CH11231 (LBNL), DE-AC52-07NA27344 (LLNL) and DE-AC02-09CH11466 (PPPL).

  16. Large area surface treatment by ion beam technology

    SciTech Connect

    Wu, R.L.C.; Lanter, W.

    1997-12-01

    An ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excited (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1,000 cm{sup 2}) of various materials, including: infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440 C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H{sub 2}/CH{sub 4}, Ar/CH{sub 4} and O{sub 2}/CH{sub 4}/H{sub 2}), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3--12 {micro}m) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

  17. Replication of the nano-scale mold fabricated with focused ion beam

    NASA Astrophysics Data System (ADS)

    Gao, J. X.; Chan-Park, M. B.; Xie, D. Z.; Ngoi, Bryan K. A.

    2004-12-01

    Silicon mold fabricated with Focused Ion Beam lithography (FIB) was used to make silicone elastomer molds. The silicon mold is composed of lattice of holes which the diameter and depth are about 200 nm and 60 nm, respectively. The silicone elastomer material was then used to replicate slavery mold. Our study show the replication process with the elastomer mold had been performed successfully and the diameter of humps on the elastomer mold is near to that of holes on the master mold. But the height of humps in the elastomer mold is only 42 nm and it is different from the depth of holes in the master mold.

  18. Bias-assisted KOH etching of macroporous silicon membranes

    NASA Astrophysics Data System (ADS)

    Mathwig, K.; Geilhufe, M.; Müller, F.; Gösele, U.

    2011-03-01

    This paper presents an improved technique to fabricate porous membranes from macroporous silicon as a starting material. A crucial step in the fabrication process is the dissolution of silicon from the backside of the porous wafer by aqueous potassium hydroxide to open up the pores. We improved this step by biasing the silicon wafer electrically against the KOH. By monitoring the current-time characteristics a good control of the process is achieved and the yield is improved. Also, the etching can be stopped instantaneously and automatically by short-circuiting Si and KOH. Moreover, the bias-assisted etching allows for the controlled fabrication of silicon dioxide tube arrays when the silicon pore walls are oxidized and inverted pores are released.

  19. Metal-assisted chemical etch porous silicon formation method

    DOEpatents

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  20. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  1. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  2. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

    NASA Astrophysics Data System (ADS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-03-01

    This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO2 superlattice-based memory devices with an improved memory window and retention properties. The SiO2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  3. High-powered pulsed-ion-beam acceleration and transport

    SciTech Connect

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

  4. Ion recombination correction in carbon ion beams.

    PubMed

    Rossomme, S; Hopfgartner, J; Lee, N D; Delor, A; Thomas, R A S; Romano, F; Fukumura, A; Vynckier, S; Palmans, H

    2016-07-01

    In this work, ion recombination is studied as a function of energy and depth in carbon ion beams. Measurements were performed in three different passively scattered carbon ion beams with energies of 62 MeV/n, 135 MeV/n, and 290 MeV/n using various types of plane-parallel ionization chambers. Experimental results were compared with two analytical models for initial recombination. One model is generally used for photon beams and the other model, developed by Jaffé, takes into account the ionization density along the ion track. An investigation was carried out to ascertain the effect on the ion recombination correction with varying ionization chamber orientation with respect to the direction of the ion tracks. The variation of the ion recombination correction factors as a function of depth was studied for a Markus ionization chamber in the 62 MeV/n nonmodulated carbon ion beam. This variation can be related to the depth distribution of linear energy transfer. Results show that the theory for photon beams is not applicable to carbon ion beams. On the other hand, by optimizing the value of the ionization density and the initial mean-square radius, good agreement is found between Jaffé's theory and the experimental results. As predicted by Jaffé's theory, the results confirm that ion recombination corrections strongly decrease with an increasing angle between the ion tracks and the electric field lines. For the Markus ionization chamber, the variation of the ion recombination correction factor with depth was modeled adequately by a sigmoid function, which is approximately constant in the plateau and strongly increasing in the Bragg peak region to values of up to 1.06. Except in the distal edge region, all experimental results are accurately described by Jaffé's theory. Experimental results confirm that ion recombination in the investigated carbon ion beams is dominated by initial recombination. Ion recombination corrections are found to be significant and cannot be

  5. Atomic-scale thermocapillary flow in focused ion beam milling

    SciTech Connect

    Das, K.; Johnson, H. T.; Freund, J. B.

    2015-05-15

    Focused ion beams provide a means of nanometer-scale manufacturing and material processing, which is used for applications such as forming nanometer-scale pores in thin films for DNA sequencing. We investigate such a configuration with Ga{sup +} bombardment of a Si thin-film target using molecular dynamics simulation. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A flow model with Marangoni forcing, based upon the temperature gradient and geometry from the atomistic simulation, indeed reproduces the flow and thus could be used to anticipate such flows and their influence in applications.

  6. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    DOE PAGES

    Persaud, A.; Barnard, J. J.; Guo, H.; ...

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystalmore » Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.« less

  7. Formation of cobalt silicide by ion beam mixing

    NASA Astrophysics Data System (ADS)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  8. Laser and focused ion beam combined machining for micro dies.

    PubMed

    Yoshida, Y; Okazaki, W; Uchida, T

    2012-02-01

    We have developed a laser and focused ion beam (FIB) compound process for press mold dies of a micro lens array (MLA) and a micro needle array (MNA) in a glassy carbon (GC). The press mold die of the MLA was roughly fabricated by UV-YAG laser. After this process, we finished this surface by scanning FIB. As a result, higher accuracy and good roughness of surface profile can be realized. An optical glass is used to confirm the shape of lens. Moreover, we fabricated 6 × 6 through-holes in the GC by the spiral drilling in addition to the focus position movement of the UV laser for press mold die of the MNA. After the FIB process, we were able to make the needle die of surface and hole wall roughness less than 0.9 μm. A silicon rubber is used to confirm the shape of the holes.

  9. Accessing Defect Dynamics using Intense, Nanosecond Pulsed Ion Beams

    NASA Astrophysics Data System (ADS)

    Persaud, A.; Barnard, J. J.; Guo, H.; Hosemann, P.; Lidia, S.; Minor, A. M.; Seidl, P. A.; Schenkel, T.

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.

  10. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    SciTech Connect

    Persaud, A.; Barnard, J. J.; Guo, H.; Hosemann, P.; Lidia, S.; Minor, A. M.; Seidl, P. A.; Schenkel, T.

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.

  11. Laser and focused ion beam combined machining for micro diesa)

    NASA Astrophysics Data System (ADS)

    Yoshida, Y.; Okazaki, W.; Uchida, T.

    2012-02-01

    We have developed a laser and focused ion beam (FIB) compound process for press mold dies of a micro lens array (MLA) and a micro needle array (MNA) in a glassy carbon (GC). The press mold die of the MLA was roughly fabricated by UV-YAG laser. After this process, we finished this surface by scanning FIB. As a result, higher accuracy and good roughness of surface profile can be realized. An optical glass is used to confirm the shape of lens. Moreover, we fabricated 6 × 6 through-holes in the GC by the spiral drilling in addition to the focus position movement of the UV laser for press mold die of the MNA. After the FIB process, we were able to make the needle die of surface and hole wall roughness less than 0.9 μm. A silicon rubber is used to confirm the shape of the holes.

  12. Scanning He+ Ion Beam Microscopy and Metrology

    SciTech Connect

    Joy, David C.

    2011-11-10

    The CD-SEM has been the tool of choice for the imaging and metrology of semiconductor devices for the past three decades but now, with critical dimensions at the nanometer scale, electron beam instruments can no longer deliver adequate performance. A scanning microscope using a He+ ion beam offers superior resolution and depth of field, and provides enhanced imaging contrast. Device metrology performed using ion beam imaging produces data which is comparable to or better than that from a conventional CD-SEM although there are significant differences in the experimental conditions required and in the details of image formation. The charging generated by a He+ beam, and the sample damage that it can cause, require care in operation but are not major problems.

  13. Laser-cooled continuous ion beams

    SciTech Connect

    Schiffer, J.P.; Hangst, J.S.; Nielsen, J.S.

    1995-08-01

    A collaboration with a group in Arhus, Denmark, using their storage ring ASTRID, brought about better understanding of ion beams cooled to very low temperatures. The longitudinal Schottky fluctuation noise signals from a cooled beam were studied. The fluctuation signals are distorted by the effects of space charge as was observed in earlier measurements at other facilities. However, the signal also exhibits previously unobserved coherent components. The ions` velocity distribution, measured by a laser fluorescence technique suggests that the coherence is due to suppression of Landau damping. The observed behavior has important implications for the eventual attainment of a crystalline ion beam in a storage ring. A significant issue is the transverse temperature of the beam -- where no direct diagnostics are available and where molecular dynamics simulations raise interesting questions about equilibrium.

  14. Rhenium ion beam for implantation into semiconductors

    SciTech Connect

    Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.; Kraevsky, S. V.; Yakushin, P. E.; Khoroshilov, V. V.; Gerasimenko, N. N.; Smirnov, D. I.; Fedorov, P. A.; Temirov, A. A.

    2012-02-15

    At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.

  15. Surface processing using water cluster ion beams

    NASA Astrophysics Data System (ADS)

    Takaoka, Gikan H.; Ryuto, Hiromichi; Takeuchi, Mitsuaki; Ichihashi, Gaku

    2013-07-01

    Vaporized water clusters were produced by an adiabatic expansion phenomenon, and various substrates such as Si(1 0 0), SiO2, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), and polycarbonate (PC) were irradiated by water cluster ion beams. The sputtered depth increased with increasing acceleration voltage, and the sputtering rate was much larger than that obtained using Ar monomer ion irradiation. The sputtering yield for PMMA was approximately 200 molecules per ion, at an acceleration voltage of 9 kV. X-ray photoelectron spectroscopy (XPS) measurements showed that high-rate sputtering for the PMMA surface can be ascribed to the surface erosion by the water cluster ion irradiation. Furthermore, the micropatterning was demonstrated on the PMMA substrate. Thus, the surface irradiation by water cluster ion beams exhibited a chemical reaction based on OH radicals, as well as excited hydrogen atoms, which resulted in a high sputtering rate and low irradiation damage of the substrate surfaces.

  16. Ion Beam Scattering by Background Helium

    NASA Astrophysics Data System (ADS)

    Grillet, Anne; Hughes, Thomas; Boerner, Jeremiah

    2015-11-01

    The presence of background gases can cause charged particle beams to become more diffuse due to scattering. Calculations for the transport of an ion beam have been performed using Aleph, a particle-in-cell plasma modeling code, and verified against a general envelop equation for charged particle beams. We have investigated the influence of background helium on the coherence and transmitted current of the ion beam. Collisions between ions and neutral particles were calculated assuming isotropic elastic scattering. Since this tends to predict larger scattering angles than are expected at high energies, these are conservative estimates for beam scattering. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration.

  17. Ion beam driven warm dense matter experiments

    NASA Astrophysics Data System (ADS)

    Bieniosek, F. M.; Ni, P. A.; Leitner, M.; Roy, P. K.; More, R.; Barnard, J. J.; Kireeff Covo, M.; Molvik, A. W.; Yoneda, H.

    2007-11-01

    We report plans and experimental results in ion beam-driven warm dense matter (WDM) experiments. Initial experiments at LBNL are at 0.3-1 MeV K+ beam (below the Bragg peak), increasing toward the Bragg peak in future versions of the accelerator. The WDM conditions are envisioned to be achieved by combined longitudinal and transverse neutralized drift compression to provide a hot spot on the target with a beam spot size of about 1 mm, and pulse length about 1-2 ns. The range of the beams in solid matter targets is about 1 micron, which can be lengthened by using porous targets at reduced density. Initial experiments include an experiment to study transient darkening at LBNL; and a porous target experiment at GSI heated by intense heavy-ion beams from the SIS 18 storage ring. Further experiments will explore target temperature and other properties such as electrical conductivity to investigate phase transitions and the critical point.

  18. NSUF Ion Beam Investment Options Workshop Report

    SciTech Connect

    Heidrich, Brenden John

    2016-03-01

    The workshop that generated this data was convened to develop a set of recommendations (a priority list) for possible funding in the area of US domestic ion beam irradiation capabilities for nuclear energy-focused RD&D. The results of this workshop were intended for use by the Department of Energy - Office of Nuclear Energy (DOE-NE) for consideration of support for these facilities. The workshop considered, as part of the initial potential future support discussions, input submitted through the Office of Nuclear Energy Request for Information (RFI) (DE-SOL-0008318, April 13, 2015), but welcomed discussion (and presentation) of other options, whether specific or general in scope. Input from users, including DOE-NE program interests and needs for ion irradiation RD&D were also included. Participants were selected from various sources: RFI respondents, NEUP/NEET infrastructure applicants, universities with known expertise in nuclear engineering and materials science and other developed sources. During the three days from March 22-24, 2016, the workshop was held at the Idaho National Laboratory Meeting Center in the Energy Innovation Laboratory at 775 University Drive, Idaho Falls, ID 83401. Thirty-one members of the ion beam community attended the workshop, including 15 ion beam facilities, six representatives of Office of Nuclear Energy R&D programs, an industry representative from EPRI and the chairs of the NSUF User’s Organization and the NSUF Scientific Review Board. Another four ion beam users were in attendance acting as advisors to the process, but did not participate in the options assessment. Three members of the sponsoring agency, the Office of Science and Technology Innovation (NE-4) also attended the workshop.

  19. Radioactive-ion-beam research at Livermore

    NASA Astrophysics Data System (ADS)

    Haight, R. C.; Mathews, G. J.; Ward, R. A.; Woosley, S. E.

    1983-06-01

    The ability to produce secondary radioactive heavy ion beams which can be isolated, focused, and transported to a secondary target can enable reaction studies and other research with the approximately more than 1300 nuclei with decay lifetimes approximately more than 1 microsec. Current research in secondary beam production and future applications in astrophysics, nuclear structure, heavy ion physics, and radiotherapy are examined as well as associated spin off and technology transfer in applied physics.

  20. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1984-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  1. Radioactive Ion Beams at INFN Laboratories

    SciTech Connect

    Calabretta, L.; Celona, L.; Chines, F.; Cosentino, L.; Cuttone, G.; Finocchiaro, P.; Maggiore, M.; Pappalardo, A.; Piazza, L.; Re, M.; Rifuggiato, D.; Rovelli, A.; Pappalardo, A.; Andrighetto, A.; Prete, G.; Biasetto, L.; Manzolaro, M.; Sarchiapone, L.; Galata, A.; Lombardi, A.

    2010-04-30

    The LNS and the LNL are the two laboratories of INFN devoted to the research on nuclear physics. Since the 1995 the LNS are involved in the design and construction of the Radioactive Ion Beam facilities called EXCYT. In the early of 2000 the LNL starts a project for second generation RIB facilities called SPES. In the 2004 at the LNS we start also the production of RIB by in flight fragmentation. Here the status and perspective of these three projects are presented.

  2. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1985-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  3. Surface modification using ionic liquid ion beams

    NASA Astrophysics Data System (ADS)

    Takaoka, Gikan H.; Hamaguchi, Takuya; Takeuchi, Mitsuaki; Ryuto, Hiromichi

    2014-12-01

    We developed an ionic liquid (IL) ion source using 1-butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) and produced IL ion beams by applying a high electric field between the tip and the extractor. Time-of-flight measurements showed that small cluster and fragment ions were contained in the positive and negative ion beams. The positive and negative cluster ions were deposited on Si(1 0 0) substrates. X-ray photoelectron spectroscopy measurements showed that the composition of the deposited layers was similar to that of an IL solvent. This suggests that a cation (A+) or an anion (B-) was attached to an IL cluster (AB)n, resulting in the formation of positive cluster ions (AB)nA+ or negative cluster ions (AB)nB-, respectively. The surfaces of the IL layers deposited on Si(1 0 0) substrates were flat at an atomic level for positive and negative cluster ion irradiation. Moreover, the contact angles of the deposited layers were similar to that of the IL solvent. Thus, surface modification of Si(1 0 0) substrates was successfully demonstrated with BMIM-PF6 cluster ion beams.

  4. Ion beam sculpting molecular scale devices

    NASA Astrophysics Data System (ADS)

    Stein, Derek Martin

    We envision solid-state nanopores at the heart of a device capable of detecting, manipulating, and ultimately sequencing individual DNA molecules. To reliably fabricate holes whose diameter is commensurate with that of the DNA molecule (˜2nm), low energy ion beams are employed to tailor the size of holes in solid-state membranes by a new technique we call "ion beam sculpting". The transmission rate of ions through the hole is monitored to provide a direct, real-time measure of the hole area that is used as a feedback signal to trigger the termination of the ion irradiation process when the desired hole size is obtained. The sensitivity of the transmitted ion count rate to atomic-scale material rearrangements at the perimeter of a hole led to a surprising discovery: Low-energy ion beams stimulate the lateral transport of matter when incident on a surface, resulting in the growth of a thin film from the boundary of a hole that closes the hole. The net flow of matter is determined by a competition between sputter erosion, which opens the hole, and a hole closing process that dominates at high temperature and low flux. The timescale for lateral matter transport under ion irradiation is surprisingly long---on the order of a second. Two physical models are proposed to account for the surprising ion-stimulated transport of matter. One model is based on the viscous flow of a stressed surface layer, while the other is based on the diffusion of mobile, ion-stimulated species at the surface of the material into the hole. The predictions of the latter are compared to ion beam sculpting experiments. We exploit ion beam sculpting to fabricate solid-state nanopores used as electronic detectors of individual DNA molecules. In ionic solution, negatively charged DNA molecules are drawn to the nanopore by an applied electrochemical potential, resulting in a detectable characteristic ionic current blockade when a molecules occludes the nanopore. The applicability of the ion sculpting

  5. Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Nasyrov, K. A.; Shaimeev, S. S.; Gritsenko, V. A.; Han, J. H.

    2009-06-01

    A phonon-coupled trap model is proposed for trap-assisted injection mechanism in silicon-oxide-nitride-oxide-silicon (SONOS)/metal-nitride-oxide-silicon (MNOS) structures at low voltages. On the basis of this model, a theory of charge injection in SONOS/MNOS has been developed. Charge injection experimental data was fitted by this theory. Obtained trap parameters are close to those previously reported [K. A. Nasyrov et al., J. Appl. Phys. 96, 4293 (2004)], where the current dependence on temperature and electric field was investigated in MNOS.

  6. Ions beams and ferroelectric plasma sources

    NASA Astrophysics Data System (ADS)

    Stepanov, Anton

    Near-perfect space-charge neutralization is required for the transverse compression of high perveance ion beams for ion-beam-driven warm dense matter experiments, such as the Neutralized Drift Compression eXperiment (NDCX). Neutralization can be accomplished by introducing a plasma in the beam path, which provides free electrons that compensate the positive space charge of the ion beam. In this thesis, charge neutralization of a 40 keV, perveance-dominated Ar+ beam by a Ferroelectric Plasma Source (FEPS) is investigated. First, the parameters of the ion beam, such as divergence due to the extraction optics, charge neutralization fraction, and emittance were measured. The ion beam was propagated through the FEPS plasma, and the effects of charge neutralization were inferred from time-resolved measurements of the transverse beam profile. In addition, the dependence of FEPS plasma parameters on the configuration of the driving pulser circuit was studied to optimize pulser design. An ion accelerator was constructed that produced a 30-50 keV Ar + beam with pulse duration <300 mus and dimensionless perveance Q up to 8 x 10-4. Transverse profile measurements 33 cm downstream of the ion source showed that the dependence of beam radius on Q was consistent with space charge expansion. It was concluded that the beam was perveance-dominated with a charge neutralization fraction of approximately zero in the absence of neutralizing plasma. Since beam expansion occurred primarily due to space charge, the decrease in effective perveance due to neutralization by FEPS plasma can be inferred from the reduction in beam radius. Results on propagation of the ion beam through FEPS plasma demonstrate that after the FEPS is triggered, the beam radius decreases to its neutralized value in about 5 mus. The duration of neutralization was about 10 mus at a charging voltage VFEPS = 5.5 kV and 35 mus at VFEPS = 6.5 kV. With VFEPS = 6.5 kV, the transverse current density profile 33 cm downstream

  7. Interference coatings based on synthesized silicon nitride.

    PubMed

    Lee, C C; Chen, H L; Hsu, J C; Tien, C L

    1999-04-01

    Silicon nitrides are synthesized by ion-assisted deposition with only one coating material and a nitrogen-ion-beam source. All the SiN(x) films are amorphous and mechanically strong. A wide range of refractive indices from 3.43 to 1.72 at a wavelength of 1550 nm is obtained. Near-IR antireflection coating and a bandpass filter based on the multilayers of SiN(x) and Si are demonstrated.

  8. 20 Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of the Applications to Industry

    NASA Astrophysics Data System (ADS)

    Yamada, Isao

    2006-11-01

    This paper reviews the development of gas cluster ion beam (GCIB) technology, including the generation of cluster beams, fundamental characteristics of cluster ion to solid surface interactions, emerging industrial applications, and identification of some of the significant events which occurred as the technology has evolved into what it is today. More than 20 years have passed since the author first began to explore feasibility of processing by gas cluster ion beams at the Ion Beam Engineering Experimental Laboratory of Kyoto University. Processes employing ions of gaseous material clusters comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications.

  9. Radioactive Ion Beam Production Capabilities at the Holifield Radioactive Ion Beam Facility

    SciTech Connect

    Beene, James R; Dowling, Darryl T; Gross, Carl J; Juras, Raymond C; Liu, Yuan; Meigs, Martha J; Mendez, II, Anthony J; Nazarewicz, Witold; Sinclair, John William; Stracener, Daniel W; Tatum, B Alan

    2011-01-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) is a national user facility for research with radioactive ion beams (RIBs) that has been in routine operation since 1996. It is located at Oak Ridge National Laboratory (ORNL) and operated by the ORNL Physics Division. The principal mission of HRIBF is the production of high-quality beams of short-lived radioactive isotopes to support research in nuclear structure physics and nuclear astrophysics. HRIBF is currently unique worldwide in its ability to provide neutron-rich fission fragment beams post-accelerated to energies above the Coulomb barrier for nuclear reactions.

  10. Ion beam deposition of amorphous carbon films with diamond like properties

    NASA Technical Reports Server (NTRS)

    Angus, John C.; Mirtich, Michael J.; Wintucky, Edwin G.

    1982-01-01

    Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

  11. Spectrometer for cluster ion beam induced luminescence

    SciTech Connect

    Ryuto, H. Sakata, A.; Takeuchi, M.; Takaoka, G. H.; Musumeci, F.

    2015-02-15

    A spectrometer to detect the ultra-weak luminescence originated by the collision of cluster ions on the surfaces of solid materials was constructed. This spectrometer consists of 11 photomultipliers with band-pass interference filters that can detect the luminescence within the wavelength ranging from 300 to 700 nm and of a photomultiplier without filter. The calibration of the detection system was performed using the photons emitted from a strontium aluminate fluorescent tape and from a high temperature tungsten filament. Preliminary measurements show the ability of this spectrometer to detect the cluster ion beam induced luminescence.

  12. Making radioactive ion beams - Detecting reaction products

    NASA Astrophysics Data System (ADS)

    Raabe, Riccardo

    2016-10-01

    We present a didactical overview of the methods for the production of radioactive ion beams (RIBs), discussing the main characteristics and associated advantages and drawbacks of the in-flight separation and isotope separation on-line methods. We include a short overview of present and planned facilities, focusing on Europe. In the second part of the paper a brief introduction on the detection of radiation is given, followed by a discussion of the specific problems related to radiation detection in measurements involving RIBs. A few illustrative examples of detection setups are presented.

  13. Plasma formed ion beam projection lithography system

    DOEpatents

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  14. Ion-beam etching enhances adhesive bonding

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Sovey, J. S.

    1980-01-01

    Metals and fluoropolymers exposed to 0.5 to 1.0 keV argon ions at current densities of 0.2 to 1.5 mA/sq cm develop surface texturing that increases tensile and shear strength of epoxy bonds. Bonds are 46 to 100 percent stronger than those of chemically etched surfaces. Metals require 3 to 4 hours of bombardment to become properly textured. Fluoropolymers require 5 seconds to 30 minutes. Ion beam will not texture nickel. Unlike chemical treatments, bonding of fluoropolymers can be done days or months after ion treatment.

  15. Electron Cooling of Intense Ion Beam

    SciTech Connect

    Dietrich, J.; Kamerdjiev, V.; Maier, R.; Prasuhn, D.; Stein, J.; Stockhorst, H.; Korotaev, Yu.; Meshkov, I.; Sidorin, A.; Smirnov, A.

    2006-03-20

    Results of experimental studies of the electron cooling of a proton beam at COSY (Juelich, Germany) are presented. Intensity of the proton beam is limited by two general effects: particle loss directly after the injection and development of instability in a deep cooled ion beam. Results of the instability investigations performed at COSY during last years are presented in this report in comparison with previous results from HIMAC (Chiba, Japan) CELSIUS (Uppsala, Sweden) and LEAR (CERN). Methods of the instability suppression, which allow increasing the cooled beam intensity, are described. This work is supported by RFBR grant no. 05-02-16320 and INTAS grant no. 03-54-5584.

  16. Physics with fast molecular-ion beams

    SciTech Connect

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented.

  17. Particle radiotherapy with carbon ion beams

    PubMed Central

    2013-01-01

    Carbon ion radiotherapy offers superior dose conformity in the treatment of deep-seated malignant tumours compared with conventional X-ray therapy. In addition, carbon ion beams have a higher relative biological effectiveness compared with protons or X-ray beams. The algorithm of treatment planning and beam delivery system is tailored to the individual parameters of the patient. The present article reviews the available literatures for various disease sites including the head and neck, skull base, lung, liver, prostate, bone and soft tissues and pelvic recurrence of rectal cancer as well as physical and biological properties. PMID:23497542

  18. Dual Ion Beam Deposition Of Diamond Films On Optical Elements

    NASA Astrophysics Data System (ADS)

    Deutchman, Arnold H.; Partyka, Robert J.; Lewis, J. C.

    1990-01-01

    Diamond film deposition processes are of great interest because of their potential use for the formation of both protective as well as anti-reflective coatings on the surfaces of optical elements. Conventional plasma-assisted chemical vapor deposition diamond coating processes are not ideal for use on optical components because of the high processing temperatures required, and difficulties faced in nucleating films on most optical substrate materials. A unique dual ion beam deposition technique has been developed which now makes possible deposition of diamond films on a wide variety of optical elements. The new DIOND process operates at temperatures below 150 aegrees Farenheit, and has been used to nucleate and grow both diamondlike carbon and diamond films on a wide variety of optical :taterials including borosilicate glass, quartz glass, plastic, ZnS, ZnSe, Si, and Ge.

  19. Focused ion beam fabrication of spintronic nanostructures: an optimization of the milling process.

    PubMed

    Urbánek, M; Uhlír, V; Bábor, P; Kolíbalová, E; Hrncír, T; Spousta, J; Sikola, T

    2010-04-09

    Focused ion beam (FIB) milling has been used to fabricate magnetic nanostructures (wires, squares, discs) from single magnetic layers (Co, permalloy) and spin-valve (permalloy/Cu/Co) multilayers (thicknesses 5-50 nm) prepared by ion beam sputtering deposition. Milled surfaces of metallic thin films typically exhibit residual roughness, which is also transferred onto the edges of the milled patterns. This can lead to domain wall pinning and influence the magnetization behaviour of the nanostructures. We have investigated the milling process and the influence of the FIB parameters (incidence angle, dwell time, overlap and ion beam current) on the roughness of the milled surface. It has been found that the main reasons for increased roughness are different sputter yields for various crystallographic orientations of the grains in polycrystalline magnetic thin films. We have found that the oblique ion beam angle, long dwell time and overlap < 1 are favourable parameters for suppression of this intrinsic roughness. Finally, we have shown how to determine the ion dose necessary to mill through the whole thin film up to the silicon substrate from scanning electron microscopy (SEM) images only.

  20. Silicon nanowire photodetectors made by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  1. Self assembled silicon nanowire Schottky junction assisted by collagen

    NASA Astrophysics Data System (ADS)

    Stievenard, Didier; Sahli, Billel; Coffinier, Yannick; Boukherroub, Rabah; Melnyk, Oleg

    2008-03-01

    We present results on self assembled silicon nanowire Schottky junction assisted by collagen fibrous. The collagen is the principle protein of connective human tissues. It presents the double interest to be a low cost biological material with the possibility to be combed as the DNA molecule. First, the collagen was combed on OTS modified surface with gold electrodes. Second, silicon nanowires were grown on silicon substrate by CVD of silane gas (SiH4) at high temperature (500 C) using a vapor-liquid-solid (VLS) process and gold particles as catalysts. In order to increase electrostatic interaction between the collagen and the nanowires, these latters were chemically modified by mercaptopropylmethoxysilane (MPTS), then chemically oxidized. Therefore, the nanowires were transferred from their substrate into water and a drop of it deposited on the surface. Nanowires are only bound to collagen and in particular, in electrode gaps. The formation of spontaneous Schotkty junction is demonstrated by current-voltage characteristics.

  2. Persistent ion beam induced conductivity in zinc oxide nanowires

    SciTech Connect

    Johannes, Andreas; Niepelt, Raphael; Gnauck, Martin; Ronning, Carsten

    2011-12-19

    We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.

  3. Persistent ion beam induced conductivity in zinc oxide nanowires

    NASA Astrophysics Data System (ADS)

    Johannes, Andreas; Niepelt, Raphael; Gnauck, Martin; Ronning, Carsten

    2011-12-01

    We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.

  4. Methods and apparatus for altering material using ion beams

    DOEpatents

    Bloomquist, Douglas D.; Buchheit, Rudy; Greenly, John B.; McIntyre, Dale C.; Neau, Eugene L.; Stinnett, Regan W.

    1996-01-01

    A method and apparatus for treating material surfaces using a repetitively pulsed ion beam. In particular, a method of treating magnetic material surfaces in order to reduce surface defects, and produce amorphous fine grained magnetic material with properties that can be tailored by adjusting treatment parameters of a pulsed ion beam. In addition to a method of surface treating materials for wear and corrosion resistance using pulsed particle ion beams.

  5. Graphene engineering by neon ion beams

    SciTech Connect

    Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; Jesse, Stephen; Kalinin, Sergei V.; Joy, David C.; Rondinone, Adam J.; Belianinov, Alex; Ovchinnikova, Olga S.

    2016-02-18

    Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of graphene based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.

  6. Ion beam deposition in materials research

    NASA Astrophysics Data System (ADS)

    Zuhr, R. A.; Pennycook, S. J.; Noggle, T. S.; Herbots, N.; Haynes, T. E.; Appleton, B. R.

    1989-02-01

    Ion beam deposition (IBD) is the direct formation of thin films using a low-energy (tens of eV) mass-analyzed ion beam. The process allows depositions in which the energy, isotopic species, deposition rate, defect production, and many other beam and sample parameters can be accurately controlled. This paper will review recent research at ORNL on the IBD process and the effects of deposition parameters on the materials properties of deposited thin films, epitaxial layers, and isotopic heterostructures. A variety of techniques including ion scattering/channeling, cross-sectional transmission electron microscopy, scanning electron microscopy, and Auger spectroscopy has been used for analysis. The fabrication of isotopic heterostructures of 74Ge and 30Si will be discussed, as well as the fabrication of metal and semiconductor overlayers on Si and Ge. The use of IBD for low-temperature epitaxy of 30Si on Si and 76Ge on Ge will be presented. The use of self-ion sputter cleaning and in situ reactive ion cleaning as methods for preparing single-crystal substrates for epitaxial deposition will be discussed. Examples of IBD formation of oxides and suicides on Si at low temperatures will also be presented.

  7. Ion beam driven HEDP experiments on NDCX

    NASA Astrophysics Data System (ADS)

    Bieniosek, F. M.; Henestroza, E.; Lidia, S.; More, R. M.; Ni, P. A.; Roy, P. K.; Seidl, P. A.; Barnard, J. J.

    2010-11-01

    Intense beams of heavy ions are capable of delivering precise and uniform beam energy deposition, with the capability to heat volumetric samples of any solid-phase target material to high energy density. The WDM conditions are achieved by combined longitudinal and transverse space-charge neutralized drift compression of the ion beam to provide a hot spot on the target with a beam spot size of about 1 mm. Initial experiments use a 0.3 MeV, 30-mA K^+ beam from the NDCX-I accelerator to heat foil targets such as Au, Pt, W, Al and Si. The NDCX-1 beam contains a low-intensity uncompressed pulse up to >10 μs of intensity ˜0.4 MW/cm^2, and a high-intensity compressed pulse (FWHM 2-3 ns and fluence ˜4 mJ). WDM experiments heat targets by both the compressed and uncompressed parts of the NDCX-I beam, and explore measurement of temperature, droplet formation and other target parameters. Future plans include target experiments using the NDCX-II accelerator, which is designed to heat targets at the Bragg peak using a 2-3 MeV lithium ion beam.

  8. Ion Beam Driven Warm Dense Matter Experiments

    NASA Astrophysics Data System (ADS)

    Bieniosek, F. M.; Henestroza, E.; Leitner, M. A.; Lidia, S. M.; Logan, B. G.; More, R. M.; Ni, P. A.; Seidl, P. A.; Waldron, W. L.; Barnard, J. J.

    2008-11-01

    We report plans and experimental results in ion beam-driven warm dense matter (WDM) experiments. Initial experiments use a 0.3 MeV K+ beam from the NDCX-I accelerator. The WDM conditions are to be achieved by longitudinal and transverse neutralized drift compression to provide a hot spot on the target with a 1-mm beam spot size, and 2-ns pulse length. As a technique for heating matter to high energy density, intense ion beams can deliver precise and uniform beam energy deposition, in a relatively large sample size, and can heat any solid-phase target material. The range of the beams in solid targets is less than 1 micron, which can be lengthened by using reduced density porous targets. We have developed a WDM target chamber and target diagnostics including a fast multi-channel optical pyrometer, optical streak camera, VISAR, and high-speed gated cameras. Initial experiments will explore measurement of temperature and other target parameters. Experiments are planned in areas such as dense electronegative targets, porous target homogenization and two-phase equation of state.

  9. Time resolved ion beam induced charge collection

    SciTech Connect

    SEXTON,FREDERICK W.; WALSH,DAVID S.; DOYLE,BARNEY L.; DODD,PAUL E.

    2000-04-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

  10. Graphene engineering by neon ion beams

    DOE PAGES

    Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; ...

    2016-02-18

    Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of graphenemore » based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.« less

  11. Channeling technique to make nanoscale ion beams

    NASA Astrophysics Data System (ADS)

    Biryukov, V. M.; Bellucci, S.; Guidi, V.

    2005-04-01

    Particle channeling in a bent crystal lattice has led to an efficient instrument for beam steering at accelerators [Biryukov et al., Crystal Channeling and its Application at High Energy Accelerators, Springer, Berlin, 1997], demonstrated from MeV to TeV energies. In particular, crystal focusing of high-energy protons to micron size has been demonstrated at IHEP with the results well in match with Lindhard (critical angle) prediction. Channeling in crystal microstructures has been proposed as a unique source of a microbeam of high-energy particles [Bellucci et al., Phys. Rev. ST Accel. Beams 6 (2003) 033502]. Channeling in nanostructures (single-wall and multi-wall nanotubes) offers the opportunities to produce ion beams on nanoscale. Particles channeled in a nanotube (with typical diameter of about 1 nm) are trapped in two dimensions and can be steered (deflected, focused) with the efficiency similar to that of crystal channeling or better. This technique has been a subject of computer simulations, with experimental efforts under way in several high-energy labs, including IHEP. We present the theoretical outlook for making channeling-based nanoscale ion beams and report the experience with crystal-focused microscale proton beams.

  12. Holifield Radioactive Ion Beam Facility Status

    SciTech Connect

    Stracener, Daniel W; Beene, James R; Dowling, Darryl T; Juras, Raymond C; Liu, Yuan; Meigs, Martha J; Mendez, II, Anthony J; Mueller, Paul Edward; Sinclair, John William; Tatum, B Alan; Sinclair IV, John W

    2009-01-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) at Oak Ridge National Laboratory (ORNL) produces high-quality beams of short-lived radioactive isotopes for nuclear science research, and is currently unique worldwide in the ability to provide neutron-rich fission fragment beams post-accelerated to energies above the Coulomb barrier. HRIBF is undergoing a multi-phase upgrade. Phase I (completed 2005) was construction of the High Power Target Laboratory to provide the on-going Isotope Separator On-Line (ISOL) development program with a venue for testing new targets, ion sources, and radioactive ion beam (RIB) production techniques with high-power beams. Phase II, which is on schedule for completion in September 2009, is the Injector for Radioactive Ion Species 2 (IRIS2), a second RIB production station that will improve facility reliability and accommodate new ion sources, new RIB production targets, and some innovative RIB purification techniques, including laser applications. The Phase III goal is to substantially improve facility performance by replacing or supplementing the Oak Ridge Isochronous Cyclotron (ORIC) production accelerator with either a high-power 25-50 MeV electron accelerator or a high-current multi-beam commercial cyclotron. Either upgrade is applicable to R&D on isotope production for medical or other applications.

  13. Ion beam surface treatment: A new technique for thermally modifying surfaces using intense, pulsed ion beams

    SciTech Connect

    Stinnett, R.W.; Buchheit, R.G.; Neau, E.L.

    1995-08-01

    The emerging capability to produce high average power (10--300 kW) pulsed ion beams at 0.2{minus}2 MeV energies is enabling us to develop a new, commercial-scale thermal surface treatment technology called Ion Beam Surface Treatment (IBEST). This new technique uses high energy, pulsed ({le}500 ns) ion beams to directly deposit energy in the top 1--20 micrometers of the surface of any material. The depth of treatment is controllable by varying the ion energy and species. Deposition of the energy in a thin surface layer allows melft of the layer with relatively small energies (1--10J/cm2) and allows rapid cooling of the melted layer by thermal conduction into the underlying substrate. Typical cooling rates of this process (109 K/sec) are sufficient to cause amorphous layer formation and the production of non-equilibrium microstructures (nanocrystalline and metastable phases). Results from initial experiments confirm surface hardening, amorphous layer and nanocrystalline grain size formation, corrosion resistance in stainless steel and aluminum, metal surface polishing, controlled melt of ceramic surfaces, and surface cleaning and oxide layer removal as well as surface ablation and redeposition. These results follow other encouraging results obtained previously in Russia using single pulse ion beam systems. Potential commercialization of this surface treatment capability is made possible by the combination of two new technologies, a new repetitive high energy pulsed power capability (0.2{minus}2MV, 25--50 kA, 60 ns, 120 Hz) developed at SNL, and a new repetitive ion beam system developed at Cornell University.

  14. Spacecraft charging during ion beam emissions in sunlight

    NASA Technical Reports Server (NTRS)

    Lai, S. T.; Mcneil, W. J.; Aggson, T. L.

    1990-01-01

    During ion beam emissions from the SCATHA satellite, the potential of the negatively charged satellite body shows a sinusoidal oscillation frequency of once-per-spin of the satellite. The minimum occurs when the ion beam is sunward. The processes that may be responsible for the voltage modulation are considered. Neutralization of ion beam space charge by photoelectrons is examined. The photoelectrons are accelerated by the negative potential of the satellite. Effects of electron impact ionization, excitation of metastable states, and photoionization of xenon neutral atoms in the ion beam are studied in detail. Critical ionization velocity interaction is unlikely under the condition considered.

  15. Performance and Controllability of Pulsed Ion Beam Ablation Propulsion

    SciTech Connect

    Yazawa, Masaru; Buttapeng, Chainarong; Harada, Nobuhiro; Suematsu, Hisayuki; Jiang Weihua; Yatsui, Kiyoshi

    2006-05-02

    We propose novel propulsion driven by ablation plasma pressures produced by the irradiation of pulsed ion beams onto a propellant. The ion beam ablation propulsion demonstrates by a thin foil (50 {mu}mt), and the flyer velocity of 7.7 km/s at the ion beam energy density of 2 kJ/cm2 adopted by using the Time-of-flight method is observed numerically and experimentally. We estimate the performance of the ion beam ablation propulsion as specific impulse of 3600 s and impulse bit density of 1700 Ns/m2 obtained from the demonstration results. In the numerical analysis, a one-dimensional hydrodynamic model with ion beam energy depositions is used. The control of the ion beam kinetic energy is only improvement of the performance but also propellant consumption. The spacecraft driven by the ion beam ablation provides high performance efficiency with short-pulsed ion beam irradiation. The numerical results of the advanced model explained latent heat and real gas equation of state agreed well with experimental ones over a wide range of the incident ion beam energy density.

  16. High sensitivity charge amplifier for ion beam uniformity monitor

    DOEpatents

    Johnson, Gary W.

    2001-01-01

    An ion beam uniformity monitor for very low beam currents using a high-sensitivity charge amplifier with bias compensation. The ion beam monitor is used to assess the uniformity of a raster-scanned ion beam, such as used in an ion implanter, and utilizes four Faraday cups placed in the geometric corners of the target area. Current from each cup is integrated with respect to time, thus measuring accumulated dose, or charge, in Coulombs. By comparing the dose at each corner, a qualitative assessment of ion beam uniformity is made possible. With knowledge of the relative area of the Faraday cups, the ion flux and areal dose can also be obtained.

  17. Ions Beams and Ferroelectric Plasma Sources

    SciTech Connect

    Stepanov, Anton

    2014-09-01

    Near-perfect space-charge neutralization is required for the transverse compression of high perveance ion beams for ion-beam-driven warm dense matter experiments, such as the Neutralized Drift Compression eXperiment (NDCX). Neutralization can be accomplished by introducing a plasma in the beam path, which provides free electrons that compensate the positive space charge of the ion beam. In this thesis, charge neutralization of a 40~keV, perveance-dominated Ar$^+$ beam by a Ferroelectric Plasma Source (FEPS) is investigated. First, the parameters of the ion beam, such as divergence due to the extraction optics, charge neutralization fraction, and emittance were measured. The ion beam was propagated through the FEPS plasma, and the effects of charge neutralization were inferred from time-resolved measurements of the transverse beam profile. In addition, the dependence of FEPS plasma parameters on the configuration of the driving pulser circuit was studied to optimize pulser design. An ion accelerator was constructed that produced a 30-50~keV Ar$^+$ beam with pulse duration $<$300~$\\mu$s and dimensionless perveance $Q$ up to 8$\\times$10$^{-4}$. Transverse profile measurements 33~cm downstream of the ion source showed that the dependence of beam radius on $Q$ was consistent with space charge expansion. It was concluded that the beam was perveance-dominated with a charge neutralization fraction of approximately zero in the absence of neutralizing plasma. Since beam expansion occurred primarily due to space charge, the decrease in effective perveance due to neutralization by FEPS plasma can be inferred from the reduction in beam radius. Results on propagation of the ion beam through FEPS plasma demonstrate that after the FEPS is triggered, the beam radius decreases to its neutralized value in about 5~$\\mu$s. The duration of neutralization was about 10~$\\mu$s at a charging voltage $V_{FEPS}$~=~5.5~kV and 35~$\\mu$s at $V_{FEPS}$~=~6.5~kV. With $V_{FEPS}$~=~6.5~kV, the

  18. High-resolution fluence verification for treatment plan specific QA in ion beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Martišíková, Mária; Brons, Stephan; Hesse, Bernd M.; Jäkel, Oliver

    2013-03-01

    Ion beam radiotherapy exploits the finite range of ion beams and the increased dose deposition of ions toward the end of their range in material. This results in high dose conformation to the target region, which can be further increased using scanning ion beams. The standard method for patient-plan verification in ion beam therapy is ionization chamber dosimetry. The spatial resolution of this method is given by the distance between the chambers (typically 1 cm). However, steep dose gradients created by scanning ion beams call for more information and improved spatial resolution. Here we propose a clinically applicable method, supplementary to standard patient-plan verification. It is based on ion fluence measurements in the entrance region with high spatial resolution in the plane perpendicular to the beam, separately for each energy slice. In this paper the usability of the RID256 L amorphous silicon flat-panel detector for the measurements proposed is demonstrated for carbon ion beams. The detector provides sufficient spatial resolution for this kind of measurement (pixel pitch 0.8 mm). The experiments were performed at the Heidelberg Ion-Beam Therapy Center in Germany. This facility is equipped with a synchrotron capable of accelerating ions from protons up to oxygen to energies between 48 and 430 MeV u-1. Beam application is based on beam scanning technology. The measured signal corresponding to single energy slices was translated to ion fluence on a pixel-by-pixel basis, using calibration, which is dependent on energy and ion type. To quantify the agreement of the fluence distributions measured with those planned, a gamma-index criterion was used. In the patient field investigated excellent agreement was found between the two distributions. At least 95% of the slices contained more than 96% of points agreeing with our criteria. Due to the high spatial resolution, this method is especially valuable for measurements of strongly inhomogeneous fluence

  19. Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

    NASA Astrophysics Data System (ADS)

    Li, Yongliang; Tang, Jihua; Qin, Guangyong; Huo, Yuping; Tian, Shuangqi

    2009-08-01

    Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism.

  20. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  1. Ion beam modification of aromatic polymers

    NASA Astrophysics Data System (ADS)

    Shukushima, Satoshi; Nishikawa, Shinya; Matsumoto, Yasuyo; Hibino, Yutaka

    1993-06-01

    We studied the optical, mechanical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H +, H 2+ and He + ions. The examined aromatic polymers were polyetherether ketone (PEEK), polyetherimide (PEI), polycther sulfon (PES), polysulfon (PSF), and polyphenylene sulfide (PPS). The optical densities at 300 nm of PES greatly increased after the irradiation. The optical densities at 400 nm of all the examined polymer linearly increased with the irradiation dose. Elongations of all the polymers at room temperature were reduced after irradiation. The PEEK film which had been irradiated with 1 MeV H + was not deformed above the melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the arematic polymers for the same absorption energy.

  2. Dispensing targets for ion beam particle generators

    NASA Technical Reports Server (NTRS)

    Miller, C. G. (Inventor)

    1974-01-01

    A target for dispensing high energy protons or neutrons or ionized atoms or ionized molecules is provided which comprises a container for the target gas, which is at atmospheric or higher pressure. The container material can release the target gas in the spot where the container is heated above a predetermined temperature by the impact of an ion beam where protons or neutrons are desired, or by electrons where ionized atoms or molecules are desired. On the outside of the container, except for the region where the beam is to impact, there is deposited a layer of a metal which is imperious to gaseous diffusion. A further protective coating of a material is placed over the layer of metal, except at the region of the ion impact area in order to adsorb any unreacted gas in the vacuum in which the target is placed, to thereby prevent reduction of the high vacuum, as well as contamination of the interior of the vacuum chamber.

  3. Ion beams from laser-generated plasmas

    NASA Technical Reports Server (NTRS)

    Hughes, R. H.; Anderson, R. J.; Gray, L. G.; Rosenfeld, J. P.; Manka, C. K.; Carruth, M. R.

    1980-01-01

    The paper describes the space-charge-limited beams produced by the plasma blowoffs generated by 20-MW bursts of 1.06-micron radiation from an active Q-switched Nd:YAG laser. Laser power densities near 10 to the 11th/sq cm on solid targets generate thermalized plasma plumes which drift to a 15-kV gridded extraction gap where the ions are extracted, accelerated, and electrostatically focused; the spatially defined ion beams are then magnetically analyzed to determine the charge state content in the beams formed from carbon, aluminum, copper, and lead targets. This technique preserves time-of-flight (TOF) information in the plasma drift region, which permits plasma ion temperatures and mass flow velocities to be determined from the Maxwellian ion curve TOF shapes for the individual charge species.

  4. Kinetic Simulations of Ion Beam Neutralization

    SciTech Connect

    Chang, O.; Wang, J.

    2011-05-20

    Full particle PIC simulations are performed to study the neutralization of an ion beam in the cohesionless, mesothermal regime. Simulations further confirmed that neutralization is achieved through interactions between the trapped electrons and the potential well established by the propagation of the beam front along the beam direction and is not through plasma instabilities as previous studies suggested. In the transverse direction, the process is similar to that of the expansion of mesothermal plasma into vacuum. Parametric simulations are also performed to investigate the effects of beam radius and domain boundary condition on the neutralization process. The results suggests that, while the qualitative behavior may be similar in ground tests, quantitative parameters such as the beam potential will be affected significantly by the vacuum chamber because of the limits imposed on the expansion process by the finite chamber space.

  5. Tuning ferromagnetism by varying ion beam profiles

    NASA Astrophysics Data System (ADS)

    Hariwal, Rajesh V.; Malik, Hitendra K.; Asokan, K.

    2017-02-01

    Present study demonstrates a novel technique to tune the ferromagnetism at room temperature by varying the ion beam profiles from 3 to 7 mm during Carbon ion implantation in ZnO matrix and keeping other beam parameters constant. The interaction of implanted C ions with host ZnO matrix at different profiles result in variable ferromagnetism from 0.75 to 3.0  ×  10‑4 emu gm‑1 due to difference in the induced radiation pressure. Similar variation is also observed in the optical bandgap from 3.35 to 3.24 eV for different beam profiles. This study shows that the material properties can be tuned and controlled by the variation of beam profiles during the ion implantation.

  6. Ion beam irradiated optical channel waveguides

    NASA Astrophysics Data System (ADS)

    Bányász, I.; Rajta, I.; Nagy, G. U. L.; Zolnai, Z.; Havranek, V.; Pelli, S.; Veres, M.; Himics, L.; Berneschi, S.; Nunzi-Conti, G.; Righini, G. C.

    2014-03-01

    Nowadays, in the modern optical communications systems, channel waveguides represent the core of many active and passive integrated devices, such as amplifiers, lasers, couplers and splitters. Different materials and fabrication processes were investigated in order to achieve the aforementioned optoelectronic circuits with low costs and high performance and reproducibility. Nevertheless, the 2D guiding structures fabrication continues to be a challenging task in some of optical materials due to their susceptibility to mechanical and/or chemical damages which can occur during the different steps of the fabrication process. Here we report on channel waveguides demonstration in erbium doped Tungsten - Tellurite (Er3+:TeO2-WO3) glasses and BGO crystals by means of a masked ion beam and/or direct writing processes performed at different energy MeV and ions species. The evidence of the waveguides formation was investigated by microscopy techniques and micro Raman spectroscopy.

  7. Radioactive Ion Beam Purification by Selective Adsorption

    NASA Astrophysics Data System (ADS)

    Jost, C.; Carter, H. K.; Griffith, B. O.; Reed, C. A.; Kratz, K.-L.; Stora, T.; Stracener, D. W.

    2008-10-01

    Isobaric contaminations in ISOL beams are a recurrent problem in nuclear physics experiments. Surface effects in the transfer line between target and ion source can be employed to achieve additional selectivity. Since interactions of the atoms' outer electrons with the surface determine adsorption behavior it can change drastically within an isobaric chain, introducing a chemical selectivity. Quartz transfer lines are currently applied at ISOLDE to reduce alkali contaminations [1]. We will conduct an on-line study of the adsorption behavior of fission products on a range of materials stable at high temperatures. Therefore a special target--ion source unit with a variable-temperature transfer line and interchangeable liner has been constructed in collaboration with the ISOLDE technical group. Results of first tests using new adsorption materials at the on-line separator test facility at Holifield Radioactive Ion Beam Facility, ORNL, will be presented. [1] Bouquerel et al., Europ. Phys. J. -- Spec. Top. 150, 277 (2006)

  8. Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

    NASA Astrophysics Data System (ADS)

    D'Ortenzi, L.; Monsù, R.; Cara, E.; Fretto, M.; Kara, S.; Rezvani, S. J.; Boarino, L.

    2016-10-01

    Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

  9. Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach.

    PubMed

    D'Ortenzi, L; Monsù, R; Cara, E; Fretto, M; Kara, S; Rezvani, S J; Boarino, L

    2016-12-01

    Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

  10. Funnel cone for focusing intense ion beams on a target

    SciTech Connect

    Bieniosek, F.M.; Henestroza, E.; Ni, P.

    2009-10-05

    We describe a funnel cone for concentrating an ion beam on a target. The cone utilizes the reflection characteristic of ion beams on solid walls to focus the incident beam andincrease beam intensity on target. The cone has been modeled with the TRIM code. A prototype has been tested and installed for use in the 350-keV K+ NDCX target chamber.

  11. Plasma and ion beam processing at Los Alamos

    SciTech Connect

    Rej, D.J.; Davis, H.A.; Henins, I.

    1994-07-01

    Efforts are underway at Los Alamos National Laboratory to utilize plasma and intense ion beam science and technology of the processing of advanced materials. A major theme involves surface modification of materials, e.g., etching, deposition, alloying, and implantation. In this paper, we concentrate on two programs, plasma source ion implantation and high-intensity pulsed ion beam deposition.

  12. Development of a focused ion beam micromachining system

    SciTech Connect

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  13. Low-energy ion beam-based deposition of gallium nitride

    SciTech Connect

    Vasquez, M. R.; Wada, M.

    2016-02-15

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  14. A novel method to survey parameters of an ion beam and its interaction with a target

    NASA Astrophysics Data System (ADS)

    Long, J. D.; Yang, Z.; Li, J.; Wang, X. H.; Wang, T.; Lan, C. H.; Dong, P.; Li, X.; He, J. L.; Zheng, L.; Liu, P.

    2017-09-01

    Beam profile and composition of the pulsed ion beam from a vacuum arc source are valuable information for designing a high-intensity deuterium-tritium neutron generator. Traditional methods are notoriously difficult to obtain the information at the same time. A novel off-line diagnostic method is presented, which can obtain the transverse beam profile with high resolution as well as species of the ions in the beam. The method is using a silicon target with high purity to interact with the ion beam, and then use secondary ion mass spectrometry (SIMS) to analyze the interaction zone of the target to get the beam information. More information on beam-target interaction could get simultaneously. Proof-of-principle simulation and experimental works have demonstrated this method is practical.

  15. Low-energy ion beam-based deposition of gallium nitride.

    PubMed

    Vasquez, M R; Wada, M

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  16. Low-energy ion beam-based deposition of gallium nitride

    NASA Astrophysics Data System (ADS)

    Vasquez, M. R.; Wada, M.

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  17. Mapping of ion beam induced current changes in FinFETs

    SciTech Connect

    Weis, C. D.; Schuh, A.; Batra, A.; Persaud, A.; Rangelow, I. W.; Bokor, J.; Lo, C. C.; Cabrini, S.; Olynick, D.; Duhey, S.; Schenkel, T.

    2008-09-30

    We report on progress in ion placement into silicon devices with scanning probealignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 mu m and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

  18. Formation of Luminescent Silicon Nanowires and Porous Silicon by Metal-Assisted Electroless Etching

    NASA Astrophysics Data System (ADS)

    Karbassian, F.; Mousavi, B. Kheyraddini; Rajabali, S.; Talei, R.; Mohajerzadeh, S.; Asl-Soleimani, E.

    2014-04-01

    Metal-assisted etching of silicon in HF/H2O2 aqueous solutions has been used to fabricate luminescent silicon nanowires (SiNWs) and porous silicon. The impact of the gold catalyst layer thickness and the etching solution on the morphology of the synthesized nanostructures and the diameter of the obtained nanowires were systematically investigated. Scanning electron microscopy (SEM) analyses reveal that the morphology of the fabricated structures strongly depends on the composition of the solution and the thickness of the catalyst layer. It has been observed that SiNWs are formed in solutions with H2O2 ratios (ξ) below 10 %; increasing the H2O2 concentration above this critical value leads to mesoporous (10 % < ξ < 14 %) and macroporous (14 % < ξ < 17 %) structures. Photoluminescence measurements show that SiNWs emit light at about 430 nm. Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy (TEM) analyses were utilized to determine the origin of the emission in the silicon nanostructures. TEM imaging demonstrates that SiNWs are covered by a thin layer of porous silicon, which is assumed to be responsible for their light emission.

  19. Focused ion beam lithography and anodization combined nanopore patterning.

    PubMed

    Lu, Kathy; Zhao, Jingzhong

    2010-10-01

    In this study, focused ion beam lithography and anodization are combined to create different nanopore patterns. Uniform-, alternating-, and gradient-sized shallow nanopore arrays are first made on high purity aluminum by focused ion beam lithography. These shallow pore arrays are then used as pore initiation sites during anodization by different electrolytes. Depending on the nature of the anodization electrolyte, the nanopore patterns by focused ion beam lithography play different roles in further pore development during anodization. The pore-to-pore distance by focused ion beam lithography should match with that by anodization for guided pore development to be effective. Ordered and heterogeneous nanopore arrays are obtained by the focused ion beam lithography and anodization combined approach.

  20. Slowing down of an ion beam in a background plasma

    NASA Astrophysics Data System (ADS)

    Newsham, D.; Ross, T. J.; Rynn, N.

    1996-07-01

    The slowing down of a barium ion beam into two different plasma backgrounds was measured using laser-induced fluorescence. The measurements were performed in a Q machine (Ti=Te=0.2 eV, 6×1010≤nback≤1.2×1010 cm-3), where a barium ion beam, with energy 0-40 eV, was injected, parallel to the confining magnetic field, into both a cesium and a lithium plasma. In order to treat the ion beam as a class of test particles, the ion beam density was maintained at approximately two orders of magnitude below the density of the background plasma. Measured changes in the velocity profile of the ion beam agrees well with the predictions of the Fokker-Planck for both nearly equal mass beam and background ions as well as for a background ion with approximately 1/20th the mass of the beam ion.

  1. Lithium-assisted electrochemical welding in silicon nanowire battery electrodes.

    PubMed

    Karki, Khim; Epstein, Eric; Cho, Jeong-Hyun; Jia, Zheng; Li, Teng; Picraux, S Tom; Wang, Chunsheng; Cumings, John

    2012-03-14

    From in situ transmission electron microscopy (TEM) observations, we present direct evidence of lithium-assisted welding between physically contacted silicon nanowires (SiNWs) induced by electrochemical lithiation and delithiation. This electrochemical weld between two SiNWs demonstrates facile transport of lithium ions and electrons across the interface. From our in situ observations, we estimate the shear strength of the welded region after delithiation to be approximately 200 MPa, indicating that a strong bond is formed at the junction of two SiNWs. This welding phenomenon could help address the issue of capacity fade in nanostructured silicon battery electrodes, which is typically caused by fracture and detachment of active materials from the current collector. The process could provide for more robust battery performance either through self-healing of fractured components that remain in contact or through the formation of a multiconnected network architecture. © 2012 American Chemical Society

  2. Atomic-scale thermocapillary flow in focused ion beam milling

    NASA Astrophysics Data System (ADS)

    Das, Kallol; Johnson, Harley; Freund, Jonathan

    2016-11-01

    Focused ion beams (FIB) offer an attractive tool for nanometer-scale manufacturing and material processing, particularly because they can be focused to a few nanometer diameter spot. This motivates their use for many applications, such as sample preparation for transmission electron microscopy (TEM), forming nanometer scale pores in thin films for DNA sequencing. Despite its widespread use, the specific mechanisms of FIB milling, especially at high ion fluxes for which significant phase change might occur, remains incompletely understood. Here we investigate the process of nanopore fabrication in thin Si films using molecular dynamics simulation where Ga+ ions are used as the focused ions. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it is driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A continuum flow model with Marangoni forcing reproduces the flow.

  3. A gas jet target for radioactive ion beam experiments

    SciTech Connect

    Chipps, K. A.; Greife, U.; Hager, U.; Sarazin, F.; Bardayan, D. W.; Pain, S. D.; Schmitt, K. T.; Smith, M. S.; Blackmon, J. C.; Linhardt, L. E.; Browne, J.; Kontos, A.; Meisel, Z.; Montes, F.; Schatz, H.; Erikson, L. E.; Lemut, A.; and others

    2013-04-19

    New radioactive ion beam (RIB) facilities, like FRIB in the US or FAIR in Europe, will push further away from stability and enable the next generation of nuclear physics experiments. Thus, the need for improved RIB targets is more crucial than ever: developments in exotic beams should coincide with developments in targets for use with those beams, in order for nuclear physics to remain on the cutting edge. Of great importance to the future of RIB physics are scattering, transfer and capture reaction measurements of rare, exotic, and unstable nuclei on light targets such as hydrogen and helium. These measurements require targets that are dense, highly localized, and pure, and conventional targets often suffer too many drawbacks to allow for such experimental designs. Targets must also accommodate the use of large area, highly-segmented silicon detector arrays, high-efficiency gamma arrays, and novel heavy ion detectors to efficiently measure the reaction products. To address this issue, the Jet Experiments in Nuclear Structure and Astrophysics (JENSA) Collaboration led by the Colorado School of Mines (CSM) is in the process of designing, building and testing a supersonic gas jet target for use at existing and future RIB facilities. The gas jet target provides a high density and high purity of target nuclei within a tightly confined region, without the use of windows or backing materials. The design also enables the use of multiple state-of-the-art detection systems.

  4. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  5. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Astrophysics Data System (ADS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  6. LIBRA-A light ion beam fusion reactor conceptual design

    SciTech Connect

    Moses, G.A.; Kulcinski, G.L.; Bruggink, D.; Engelstad, R.; Lovell, E.; MacFarlane, J.; Musicki, Z.; Peterson, R.; Sawan, M.; Sviatoslavsky, I.

    1988-01-01

    The LIBRA light ion beam fusion commercial reactor study is a self-consistent conceptual design of a 330 MWe power plant with an accompanying economic analysis. Fusion targets are imploded by 4-MJ-shaped pulses of 30 MeV Li ions at a rate of 3 Hz. The target gain is 80, leading to a yield of 320 MJ. The high intensity part of the ion pulse is delivered by 16 diodes through 16 separate z-pinch plasma channels formed in 100 torr of helium with trace amounts of lithium. The blanket is an array of porous flexible silicon carbide tubes with Li/sub 17/Pb/sub 83/ flowing downward through them. These tubes (INPORT units) shield the target chamber wall from both neutron damage and the shock overpressure of the target explosion. The target chamber is a right circular cylinder, 8.7 meters in diameter. The target chamber is ''self-pumped'' by the target explosion generated overpressure into a surge tank partially filled with liquid that surrounds the target chamber. This scheme refreshes the chamber at the desired 3 Hz frequency without excessive pumping demands. The blanket multiplication is 1.2 and the tritium breeding ratio is 1.4. The direct capital cost of LIBRA is estimated to be $2200/kWe. 12 refs., 9 figs., 1 tab.

  7. Overview of the LIBRA light ion beam fusion conceptual design

    SciTech Connect

    Moses, G.A.; Kulcinski, G.L.; Bruggink, D.; Engelstad, R.; Lovell, E.; MacFarlane, J.; Musicki, Z.; Peterson, R.; Sawan, M.; Sviatoslavsky, I.

    1989-03-01

    The LIBRA light ion beam fusion commercial reactor study is a self-consistent conceptual design of a 330 MWe power plant with an accompanying economic analysis. Fusion targets are imploded by 4 MJ shaped pulses of 30 MeV Li ions at a rate of 3 Hz. The target gain is 80, leading to a yield of 320 MJ. The high intensity part of the ion plate is delivered by 16 diodes through 16 separate z-pinch plasma channels formed in 100 torr of helium with trace amounts of lithium. The blanket is an array of porous flexible silicon carbide tubes with Li/sub 17/Pb/sub 83/ flowing downward through them. These tubes (INPORT units) shield the target chamber wall from both neutron damage and the shock overpressure of the target explosion. The target chamber is self-pumped by the target explosion generated overpressure into a surge tank partially filled with Li/sub 17/Pb/sub 83/ that surrounds the target chamber. This scheme refreshes the chamber at the desired 3 Hz frequency without excessive pumping demands. The blanket multiplication is 1.2 and the tritium breeding ratio is 1.4. The direct capital cost of LIBRA is estimated to be $2200/kWe.

  8. Atomic force microscope cantilever calibration using a focused ion beam.

    PubMed

    Slattery, Ashley D; Quinton, Jamie S; Gibson, Christopher T

    2012-07-20

    A calibration method is presented for determining the spring constant of atomic force microscope (AFM) cantilevers, which is a modification of the established Cleveland added mass technique. A focused ion beam (FIB) is used to remove a well-defined volume from a cantilever with known density, substantially reducing the uncertainty usually present in the added mass method. The technique can be applied to any type of AFM cantilever; but for the lowest uncertainty it is best applied to silicon cantilevers with spring constants above 0.7 N m(-1), where uncertainty is demonstrated to be typically between 7 and 10%. Despite the removal of mass from the cantilever, the calibration method presented does not impair the probes' ability to acquire data. The technique has been extensively tested in order to verify the underlying assumptions in the method. This method was compared to a number of other calibration methods and practical improvements to some of these techniques were developed, as well as important insights into the behavior of FIB modified cantilevers. These results will prove useful to research groups concerned with the application of microcantilevers to nanoscience, in particular for cases where maintaining pristine AFM tip condition is critical.

  9. Advances in mask fabrication and alignment for masked ion-beam lithography

    NASA Astrophysics Data System (ADS)

    Stumbo, David P.; Damm, George A.; Engler, D. W.; Fong, F. O.; Sen, S.; Wolfe, John C.; Randall, John N.; Mauger, Phillip E.; Shimkunas, Alex R.; Loeschne, Hans

    1990-05-01

    This paper describes recent developments in three areas ofmasked ion beam lithography (MIBL). These are 1) fabrication oflarge area, low distortion, silicon stencilmasks for demagnifying ion projection lithography, 2) fabrication ofstencil masks with nanometer scale resolution for 1:1 proximity printing, and 3) development of a direct method of alignment using the ion beam induced fluorescence of Si02. These topics are discussed below. Demagnifying ion projection masks: We describe the fabrication of stencil masks in large area, low stress (10 MPa), n-type silicon membranes. The projection masks have a silicon foil area 95 mm in diameter, thicknesses between 1.5-5 and resolution of0.6um. Measured distortion (3a) in the IPL masks ranges between 0.23gm and 0.65,um, with an experimental error of 0.20 1um. Proximity printing masks: A process is described for fabricating stencil masks with 50 nm resolution in low stress, n-type silicon membranes. Membranes less than 0.5 ,ttm thick are shown to be free of the sidewall taper that limits resolution in thicker masks. These thin membranes show a slightly flared profile due to the imperfectly collimated etching ions. Alignment: A direct method of alignment is being developed which uses the ion beam induced fluorescence of Si02 marks. Fluorescence yield is characterized as a function of ion energy and resist coating thickness. The yield for Si02 is in the range between 0.1-1.0 photons/proton, while the yields for Si, Al, and photoresist are negligibly small. Thus, a simple alignment technique can be implemented where registration of a grating in the mask with a corresponding oxide pattern is detected as a fluorescence maximum. A simple model predicts that 50 nm alignment can be accomplished, following a 1 im prealignment, in 2 seconds.

  10. Structure of the near-surface layer of NiTi on the meso- and microscale levels after ion-beam surface treatment

    SciTech Connect

    Meisner, L. L. Meisner, S. N.; Poletika, T. M. Girsova, S. L.; Tverdichlebova, A. V.; Shulepov, I. A.

    2014-11-14

    Using the EBSD, SEM and TEM methods, the structure of surface layer of polycrystalline NiTi alloy samples was examined after the modification of material surface by the pulsed action of mean-energy silicon ion beam. It was found that the ion beam treatment would cause grain fragmentation of the near-surface layer to a depth 5÷50 μm; a higher extent of fragmentation was observed in grains whose close-packed planes were oriented approximately in the same direction as the ion beam was. The effect of high-intensity ion beam treatment on the anisotropic behavior of polycrystalline NiTi alloy and the mechanisms involved were also examined.

  11. Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter Arrays

    SciTech Connect

    Ishikawa, Junzo; Gotoh, Yasuhito; Taguchi, Shuhei; Nicolaescu, Dan; Tsuji, Hiroshi; Kimoto, Tsunenobu; Takeuchi, Mitsuaki; Sakai, Shigeki

    2011-01-07

    Suppression of divergence of low energy neon ion beam was experimentally demonstrated by neutralizing the space charge of ion beam with low energy electrons emitted from silicon field emitter arrays (Si-FEAs). Treatment of the FEAs with trifluoromethane plasma realized surface carbonization which was efficient to elongate the lifetime of the FEA and to improve the electron energy distribution. Together with the improvement of the performance of Si-FEA, we have developed a novel electron deceleration system to produce low energy electrons. A low energy neon ion beam was produced and the beam property was investigated with and without the electron supply from surface carbonized Si-FEA (Si:C-FEA). As a result, the divergence of the neon ion beam was largely suppressed with presence of the electrons.

  12. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  13. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  14. Fast ion beam-plasma interaction system.

    PubMed

    Breun, R A; Ferron, J R

    1979-07-01

    A device has been constructed for the study of the interaction between a fast ion beam and a target plasma of separately controllable parameters. The beam of either hydrogen or helium ions has an energy of 1-4 keV and a total current of 0.5-2 A. The beam energy and beam current can be varied separately. The ion source plasma is created by a pulsed (0.2-10-ms pulse length) discharge in neutral gas at up to 3 x 10(-3) Torr. The neutrals are pulsed into the source chamber, allowing the neutral pressure in the target region to remain less than 5 x 10(-5) Torr at a 2-Hz repetition rate. The creation of the source plasma can be described by a simple set of equations which predict optimum source design parameters. The target plasma is also produced by a pulsed discharge. Between the target and source chambers the beam is neutralized by electrons drawn from a set of hot filaments. Currently under study is an unstable wave in a field-free plasma excited when the beam velocity is nearly equal to the target electron thermal velocity (v(beam) approximately 3.5 x 10(7) cm/s, Te = 0.5 eV).

  15. Modified betatron for ion beam fusion

    SciTech Connect

    Rostoker, N.; Fisher, A.

    1986-01-01

    An intense neutralized ion beam can be injected and trapped in magnetic mirror or tokamak geometry. The details of the process involve beam polarization so that the beam crosses the fringing fields without deflection and draining the polarization when the beam reaches the plasma. Equilibrium requires that a large betatron field be added in tokamak geometry. In mirror geometry a toroidal field must be added by means of a current along the mirror axis. In either case, the geometry becomes that of the modified betatron which has been studied experimentally and theoretically in recent years. We consider beams of d and t ions with a mean energy of 500 kev and a temperature of about 50 kev. The plasma may be a proton plasma with cold ions. It is only necessary for beam trapping or to carry currents. The ion energy for slowing down is initially 500 kev and thermonuclear reactions depend only on the beam temperature of 50 kev which changes very slowly. This new configuration for magnetic confinement fusion leads to an energy gain of 10--20 for d-t reactions whereas previous studies of beam target interaction predicted a maximum energy gain of 3--4. The high beam energy available with pulsed ion diode technology is also essential for advanced fuels. 16 refs., 3 figs.

  16. Materials processing with intense pulsed ion beams

    SciTech Connect

    Rej, D.J.; Davis, H.A.; Olson, J.C.

    1996-12-31

    We review research investigating the application of intense pulsed ion beams (IPIBs) for the surface treatment and coating of materials. The short range (0.1-10 {mu}m) and high-energy density (1-50 J/cm{sup 2}) of these short-pulsed ({le} 1 {mu}s) beams (with ion currents I = 5 - 50 kA, and energies E = 100 - 1000 keV) make them ideal to flash-heat a target surface, similar to the more familiar pulsed laser processes. IPIB surface treatment induces rapid melt and solidification at up to 10{sup 10} K/s to cause amorphous layer formation and the production of non-equilibrium microstructures. At higher energy density the target surface is vaporized, and the ablated vapor is condensed as coatings onto adjacent substrates or as nanophase powders. Progress towards the development of robust, high-repetition rate IPIB accelerators is presented along with economic estimates for the cost of ownership of this technology.

  17. Ion beam emittance from an ECRIS

    SciTech Connect

    Spädtke, P. Lang, R.; Mäder, J.; Maimone, F.; Schlei, B. R.; Tinschert, K.; Biri, S.; Rácz, R.

    2016-02-15

    Simulation of ion beam extraction from an Electron Cyclotron Resonance Ion Source (ECRIS) is a fully 3 dimensional problem, even if the extraction geometry has cylindrical symmetry. Because of the strong magnetic flux density, not only the electrons are magnetized but also the Larmor radius of ions is much smaller than the geometrical dimension of the plasma chamber (Ø 64 × 179 mm). If we assume that the influence of collisions is small on the path of particles, we can do particle tracking through the plasma if the initial coordinates of particles are known. We generated starting coordinates of plasma ions by simulation of the plasma electrons, accelerated stochastically by the 14.5 GHz radio frequency power fed to the plasma. With that we were able to investigate the influence of different electron energies on the extracted beam. Using these assumptions, we can reproduce the experimental results obtained 10 years ago, where we monitored the beam profile with the help of viewing targets. Additionally, methods have been developed to investigate arbitrary 2D cuts of the 6D phase space. To this date, we are able to discuss full 4D information. Currently, we extend our analysis tool towards 5D and 6D, respectively.

  18. Microdosimetry in ion-beam therapy

    NASA Astrophysics Data System (ADS)

    Magrin, Giulio; Mayer, Ramona

    2015-05-01

    The information of the dose is not sufficiently describing the biological effects of ions on tissue since it does not express the radiation quality, i.e. the heterogeneity of the processes due to the slowing-down and the fragmentation of the particles when crossing a target. Depending on different circumstances, the radiation quality can be determined using measurements, calculations, or simulations. Microdosimeters are the primary tools used to provide the experimental information of the radiation quality and their role is becoming crucial for the recent clinical developments in particular with carbon ion therapy. Microdosimetry is strongly linked to the biological effectiveness of the radiation since it provides the physical parameters which explicitly distinguish the radiation for its capability of damaging cells. In the framework of ion-beam therapy microdosimetry can be used in the preparation of the treatment to complement radiobiological experiments and to analyze the modification of the radiation quality in phantoms. A more ambitious goal is to perform the measurements during the irradiation procedure to determine the non-targeted radiation and, more importantly, to monitor the modification of the radiation quality inside the patient. These procedures provide the feedback of the treatment directly beneficial for the single patient but also for the characterization of the biological effectiveness in general with advantages for all future treatment. Traditional and innovative tools are currently under study and an outlook of present experience and future development is presented here.

  19. The production of accelerated radioactive ion beams

    SciTech Connect

    Olsen, D.K.

    1993-11-01

    During the last few years, substantial work has been done and interest developed in the scientific opportunities available with accelerated radioactive ion beams (RIBs) for nuclear physics, astrophysics, and applied research. This interest has led to the construction, development, and proposed development of both first- and second-generation RIB facilities in Asia, North America, and Europe; international conferences on RIBs at Berkeley and Louvain-la-Neuve; and many workshops on specific aspects of RIB production and science. This paper provides a discussion of both the projectile fragmentation, PF, and isotope separator on-line, ISOL, approach to RIB production with particular emphasis on the latter approach, which employs a postaccelerator and is most suitable for nuclear structure physics. The existing, under construction, and proposed facilities worldwide are discussed. The paper draws heavily from the CERN ISOLDE work, the North American IsoSpin Laboratory (ISL) study, and the operating first-generation RIB facility at Louvain-la-Neuve, and the first-generation RIB project currently being constructed at ORNL.

  20. Graphene engineering by neon ion beams

    NASA Astrophysics Data System (ADS)

    Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; Jesse, Stephen; Kalinin, Sergei V.; Joy, David C.; Rondinone, Adam J.; Belianinov, Alex; Ovchinnikova, Olga S.

    2016-03-01

    Achieving the ultimate limits of lithographic resolution and material performance necessitates engineering of matter with atomic, molecular, and mesoscale fidelity. With the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of 2D materials, such as graphene-based nanoelectronics, is coming to the forefront as a tool for fabrication and surface manipulation. However, the effects of using a Ne focused-ion-beam on the fidelity of structures created out of 2D materials have yet to be explored. Here, we will discuss the use of energetic Ne ions in engineering graphene nanostructures and explore their mechanical, electromechanical and chemical properties using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we are able to ascertain changes in the mechanical, electrical and optical properties of Ne+ beam milled graphene nanostructures and surrounding regions. Additionally, we are able to link localized defects around the milled graphene to ion milling parameters such as dwell time and number of beam passes in order to characterize the induced changes in mechanical and electromechanical properties of the graphene surface.

  1. Developments in focused ion beam metrology

    NASA Astrophysics Data System (ADS)

    Salen, Jesse A.; Athas, Gregory J.; Barnes, Drew; Bassom, Neil J.; Yansen, Don E.

    1998-09-01

    We present the ability of a focused ion beam system (FIB) to perform as an effective metrology tool. This feature is a benefit in areas where FIB technology is or can be used, or where pre-measurement cross-sectioning is required, such as the case in thin film head trimming, integrated circuit inspection, and micro-electromechanical device (MEMS) development. The FIB is a proven tool for taking high- resolution images, performing mills and depositions, and cross-sectioning samples. We demonstrate the FIB's ability to perform these tasks in a repeatable manner and take accurate measurements independently of the operator. First, we find a quantitative method for analyzing the image quality in order to remove any operator discrepancy. We show that this task can be achieved by analyzing the FIB's Modulation Transfer Function (MTF). The MTF is a proven method for measuring the quality of light optics, but has never been used as a standard in FIB imaging because sub- 100m pitch resolution targets can not easily be fabricated; however, we demonstrate a new method for obtaining the MTF. By correlating changes in FIB parameters to changes in the MTF, we have a FIB image standard, as well as an image calibration tool that is transparent to the operator. Second, we describe how current FIB software can use an automated 'measure tool' to take accurate measurements independently of the operator. We show that when using both these methods, the FIB is a repeatable metrology tool for a variety of applications.

  2. Ion Beam Sweeping using High Temperature Super Conducting Magnet

    SciTech Connect

    Sakai, Shigeki; Fujita, Hideki; King, Tom; Briggs, Neil; Miles, Matt; McCrohon, Mick; Gibson, Simon

    2011-01-07

    Advanced implantation systems used for semiconductor fabrication need to transport low energy ion beams. In this respect it is an advantage to employ a short beam line. Strong magnetic field in a compact footprint can enable shorter beam lines. In this work we report the use of a superconducting magnet to generate the strong magnetic field. We have developed a prototype superconducting AC magnet operating at frequencies of 80-156 Hz to sweep ion beams. We have studied the performance of ion beam sweeping using the AC superconducting magnet.

  3. Heavy ion beam transport and interaction with ICF targets

    NASA Astrophysics Data System (ADS)

    Velarde, G.; Aragonés, J. M.; Gago, J. A.; Gámez, L.; González, M. C.; Honrubia, J. J.; Martínez-Val, J. M.; Mínguez, E.; Ocaña, J. L.; Otero, R.; Perlado, J. M.; Santolaya, J. M.; Serrano, J. F.; Velarde, P. M.

    1986-01-01

    Numerical simulation codes provide an essential tool for analyzing the very broad range of concepts and variables considered in ICF targets. In this paper, the relevant processes embodied in the NORCLA code, needed to simulate ICF targets driven by heavy ion beams will be presented. Atomic physic models developed at DENIM to improve the atomic data needed for ion beam plasma interaction will be explained. Concerning the stopping power, the average ionization potential following a Thomas-Fermi model has been calculated, and results are compared with full quantum calculations. Finally, a parametric study of multilayered single shell targets driven by heavy ion beams will be shown.

  4. Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

    PubMed Central

    Radek, Manuel; Liedke, Bartosz; Schmidt, Bernd; Voelskow, Matthias; Bischoff, Lothar; Lundsgaard Hansen, John; Nylandsted Larsen, Arne; Bougeard, Dominique; Böttger, Roman; Prucnal, Slawomir; Posselt, Matthias; Bracht, Hartmut

    2017-01-01

    Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. PMID:28773172

  5. Formation of Mosaic Silicon Oxide Structure during Metal-Assisted Electrochemical Etching of Silicon at High Current Density

    NASA Astrophysics Data System (ADS)

    Cao, Dao Tran; Anh, Cao Tuan; Ngan, Luong Truc Quynh

    2016-05-01

    We have used constant-current, metal-assisted electrochemical etching of silicon in HF/H2O2/ethanol electrolyte to fabricate porous silicon. We found that, at large enough current density, the sponge-like porous silicon structure is replaced by a mosaic structure, which includes islands of various shapes emerging between trenches that have been etched downward. Energy-dispersive x-ray analysis showed that the surface of the mosaic pieces was covered with silicon oxide, while little silicon oxide developed on the surface of trenches. We suggest that the appearance of the mosaic structure can be explained by the increase in the oxidation rate of silicon when the anodic current density increases, combined with no change in the dissolution rate of silicon oxide into the solution. Consequently, above a certain value of anodic current density, there is sufficient residual silicon oxide on the etched surface to create a continuous thin film. However, if the silicon oxide layer is too thick (e.g., due to too high anodic current density or too long etching time), it will become cracked (formation of mosaic pieces), likely due to differences in thermal expansion coefficient between the amorphous silicon oxide layer and crystalline silicon substrate. The oxide is cracked at locations with many defects, and the cracks reveal the silicon substrate. Therefore, at the locations where cracks occur, etching will go sideways and downward, creating trenches.

  6. Perspectives of the Pixel Detector Timepix for Needs of Ion Beam Therapy

    NASA Astrophysics Data System (ADS)

    Martišíková, M.; Hartmann, B.; Jäkel, O.; Granja, C.; Jakubek, J.

    2012-08-01

    Radiation therapy with ion beams is a highly precise kind of cancer treatment. In ion beam therapy the finite range of the ion beams in tissue and the increase of ionization density at the end of their path, the Bragg-peak, are exploited. Ions heavier than protons offer in addition increased biological effectiveness and decreased scattering. In this contribution we discuss the potential of a quantum counting and position sensitive semiconductor detector Timepix for its applications in ion beam therapy measurements. It provides high sensitivity and high spatial resolution (pixel pitch 55 μm). The detector, developed by the Medipix Collaboration, consists of a silicon sensor bump bonded to a pixelated readout chip (256 × 256 pixels with 55 μm pitch). An integrated USB-based readout interface together with the Pixelman software enable registering single particles online with 2D-track visualization. The experiments were performed at the Heidelberg Ion Beam Therapy Center (HIT), which is a modern ion beam therapy facility. Patient treatments are performed with proton and carbon ions, which are accelerated by a synchrotron. For dose delivery to the patient an active technique is used: narrow pencil-like beams are scanned over the target volume. The possibility to use the detector for two different applications was investigated: ion spectroscopy and beam delivery monitoring by measurement of secondary charged particles around the patient. During carbon ion therapy, a variety of ion species is created by nuclear fragmentation processes of the primary beam. Since they differ in their biological effectiveness, it is of large interest to measure the ion spectra created under different conditions and to visualize their spatial distribution. The possibility of measurements of ion energy loss in silicon makes Timepix a promising detector for ion-spectroscopic studies in patient-like phantoms. Unpredictable changes in the patient can alter the range of the ion beam in the body

  7. First Results From A Multi-Ion Beam Lithography And Processing System At The University Of Florida

    SciTech Connect

    Gila, Brent; Appleton, Bill R.; Fridmann, Joel; Sanabia, Jason E.; Mazarov, Paul; Bauerdick, S.; Bruchhaus, Lars; Mimura, Ryo; Jede, Ralf

    2011-06-01

    The University of Florida (UF) have collaborated with Raith to develop a version of the Raith ionLiNE IBL system that has the capability to deliver multi-ion species in addition to the Ga ions normally available. The UF system is currently equipped with a AuSi liquid metal alloy ion source (LMAIS) and ExB filter making it capable of delivering Au and Si ions and ion clusters for ion beam processing. Other LMAIS systems could be developed in the future to deliver other ion species. This system is capable of high performance ion beam lithography, sputter profiling, maskless ion implantation, ion beam mixing, and spatial and temporal ion beam assisted writing and processing over large areas (100 mm2)--all with selected ion species at voltages from 15-40 kV and nanometer precision. We discuss the performance of the system with the AuSi LMAIS source and ExB mass separator. We report on initial results from the basic system characterization, ion beam lithography, as well as for basic ion-solid interactions.

  8. Energetic Ion Beam Production by a Low-Pressure Plasma Focus Discharge

    SciTech Connect

    Lim, L. K.; Yap, S. L.; Wong, C. S.

    2011-03-30

    Energetic ion beam emissions in a 3 kJ Mather type plasma focus operating at low-pressure regime are investigated. Deuterium gas is used and the discharge is operated in a low-pressure regime of below 1 mbar. Formation of the current sheath during the breakdown phase at the back wall is assisted by a set delayed trigger pulse. Energetic and intense ion beams with good reproducibility have been obtained for the operating pressure ranging from 0.05 mbar to 0.5 mbar. Deuteron beam is determined by time resolved measurement by making use of three biased ion collectors placed at the end on direction. The average energies of deuteron beams are resolved by using time-of flight method. Correlation between the ion emissions and the current sheath dynamics is also discussed.

  9. Catalytic activity of noble metals for metal-assisted chemical etching of silicon

    PubMed Central

    2012-01-01

    Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent. Three major factors control the etching reaction and the porous silicon structure: photoillumination during etching, oxidizing agents, and metal particles. In this study, the influence of noble metal particles, silver, gold, platinum, and rhodium, on this etching is investigated under dark conditions: the absence of photogenerated charges in the silicon. The silicon dissolution is localized under the particles, and nanopores are formed whose diameters resemble the size of the metal nanoparticles. The etching rate of the silicon and the catalytic activity of the metals for the cathodic reduction of oxygen in the hydrofluoric acid solution increase in the order of silver, gold, platinum, and rhodium. PMID:22738277

  10. Development of the Holifield Radioactive Ion Beam Facility

    NASA Astrophysics Data System (ADS)

    Tatum, B. A.; Alton, G. D.; Auble, R. L.; Beene, J. R.; Dowling, D. T.; Haynes, D. L.; Juras, R. C.; Meigs, M. J.; Mills, G. D.; Mosko, S. W.; Mueller, P. E.; Olsen, D. K.; Shapira, D.; Sinclair, J. W.; Carter, H. K.; Welton, R. F.; Williams, C. E.; Bailey, J. D.; Stracener, D. W.

    1997-05-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility's radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. The HRIBF was formally dedicated on December 12, 1996, and approved for high intensity operation as a National User Facility, the first of its kind in North America. This paper describes facility development to date.

  11. Ion beam energy deposition physics for ICF targets

    SciTech Connect

    Mehlhorn, T.A.

    1980-01-01

    The target interaction physics of light ion beams will be described. The phenomenon of range shortening with increasing material temperature will be corroborated, and the concomittant phenomenon of range relengthening due to ion-electron decoupling will be introduced.

  12. Ion beam requirements for fast ignition of inertial fusion targets

    SciTech Connect

    Honrubia, J. J.; Murakami, M.

    2015-01-15

    Ion beam requirements for fast ignition are investigated by numerical simulation taking into account new effects, such as ion beam divergence, not included before. We assume that ions are generated by the TNSA scheme in a curved foil placed inside a re-entrant cone and focused on the cone apex or beyond. From the focusing point to the compressed core, ions propagate with a given divergence angle. Ignition energies are obtained for two compressed fuel configurations heated by proton and carbon ion beams. The dependence of the ignition energies on the beam divergence angle and on the position of the ion beam focusing point has been analyzed. Comparison between TNSA and quasi-monoenergetic ions is also shown.

  13. Development of the Holifield Radioactive Ion Beam Facility

    SciTech Connect

    Tatum, B.A.

    1997-08-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility`s radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. This paper details facility development to date.

  14. Historical milestones and future prospects of cluster ion beam technology

    NASA Astrophysics Data System (ADS)

    Yamada, Isao

    2014-08-01

    Development of technology for processing of surfaces by means of gas cluster ion beams began only about a quarter century ago even though fundamental research related to generation of gas clusters began much earlier. Industrial applications of cluster ion beams did not start to be explored until commercial equipment was first introduced to the ion beam community in around 2000. The technology is now evolving rapidly with industrial equipment being engineered for many diverse surface processing applications which are made possible by the unique characteristics of cluster-ion/solid-surface interactions. In this paper, important historical milestones in cluster ion beam development are described. Present activities related to a wide range of industrial applications in semiconductors, magnetic and optical devices, and bio-medical devices are reviewed. Several emerging new advances in cluster beam applications for the future are also discussed.

  15. Use of energetic ion beams in materials synthesis and processing

    SciTech Connect

    Appleton, B R

    1991-01-01

    A brief review of the use energetic ion beams and related techniques for the synthesis, processing, and characterization of materials is presented. Selected opportunity areas are emphasized with examples, and references are provided for more extensive coverage.

  16. Friction of self-lubricating surfaces by ion beam techniques. Final technical report

    SciTech Connect

    Bhattacharya, R.S.; Rai, A.K.

    1992-05-01

    UES, Inc. conducted a research and development program designed to establish conditions for ion implantation/mixing of suitable additives into the surfaces of bulk ceramics and metals for obtaining self-lubricating low friction and wear characteristics. The substrates considered were ZrO{sub 2}, Al{sub 2}O{sub 3}, Si{sub 3}N{sub 4}, steel and Ni-base superalloy. The lubricant additives chosen were BaF{sub 2}/CaF{sub 2}Ag, MoS{sub 2}, WS{sub 2}and B{sub 2}O{sub 3}. The initial tasks of the program were to synthesis these lubricant compounds by co-implantation of constituent elements if sufficient beams of desired elements were obtained. The final tasks were to investigate high energy (MeV) ion mixing of deposited coatings as well as to investigate ion beam assisted deposition using low energy ion beams. It was shown that MoS{sub 2} can be synthesized by co-implantation of Mo{sup +} and S{sup +} in ceramic materials with appropriate choice of energies to obtain nearly overlapping depth profiles. The sliding life of DC magnetron sputtered MoS{sub 2} films of thicknesses {approximately}7500{Angstrom} on ceramic materials such as sapphire, Si{sub 3}N{sub 4} and ZrO{sub 3} were improved by ten to thousand fold after 2 Mev Ag{sup +} ion mixing. Ion beam assisted deposition (IBAD) and ion beam mixing were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF/CaF{sub 2}/Ag composites.

  17. Biophysical models in ion beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Scholz, Michael; Elsässer, Thilo

    One major rationale for the application of heavy ion beams in tumor therapy is their increased relative biological effectiveness (RBE) in the Bragg peak region. For dose prescription, the increased effectiveness has to be taken into account in treatment planning. Hence, the complex dependencies of RBE on the dose level, biological endpoint, position in the field etc. require biophysical models, which have to fulfill two important criteria: simplicity and quantitative precision. Simplicity means that the number of free parameters should be kept at a minimum. Due to the lack of precise quantitative data, at least at present, this requirement is incompatible with approaches aiming at the molecular modeling of the whole chain of production, processing and repair of biological damages. Quantitative precision is required since steep gradients in the dose response curves are observed for most tumor and normal tissues; thus, even small uncertainties in the estimation of the biologically effective dose can transform into large uncertainties in the clinical outcome. The paper will give a general introduction into the field, followed by a description of a specific model, the so called 'Local Effect Model' (LEM). This model has been successfully applied within treatment planning in the GSI pilot project for carbon ion tumor therapy over almost 10 years now. The model is based on the knowledge of charged particle track structure in combination with the response of the cells or tissues under consideration to conventional photon radiation. The model is compared to other approaches developed for the calculation of the biological effects of high-LET radiation. Furthermore, recent improvements of the model are described. Due to the quantitative precision, besides applications in tumor therapy the LEM seems to be adequate for the calculation of stochastic radiation effects, i.e. in the framework of radiation protection. Examples for the calculation of cell transformation are

  18. Progress toward a microsecond duration, repetitively pulsed, intense- ion beam

    SciTech Connect

    Davis, H.A.; Olson, J.C.; Reass, W.A.; Coates, D.M.; Hunt, J.W.; Schleinitz, H.M.; Lovberg, R.H.; Greenly, J.B.

    1996-07-01

    A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. We are developing a 200-250 keV, 15 kA, 1 {mu}s duration, 1-30 Hz intense ion beam accelerator to address these applications.

  19. Transfer Casting From Ion-Beam-Textured Surfaces

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Sovey, J. S.

    1986-01-01

    Textured surfaces created on metals, ceramics, and polymers. Electron-bombardment ion thrustor used as neutralized-ion-beam source. Beam of directed, energetic ions alter surface chemistry and/or morphology of many materials. By adjusting ion energy and ion-beam current density impinging upon target, precise surface modifications obtained without risk of targetmaterial melting or bulk decomposition. Technique developed to generate precise, controllable, surface microstructures on metals, ceramics, and polymers.

  20. A preliminary model of ion beam neutralization. [in thruster plasmas

    NASA Technical Reports Server (NTRS)

    Parks, D. E.; Katz, I.

    1979-01-01

    A theoretical model of neutralized thruster ion beam plasmas has been developed. The basic premise is that the beam forms an electrostatic trap for the neutralizing electrons. A Maxwellian spectrum of electron energies is maintained by collisions between trapped electrons and by collective randomization of velocities of electrons injected from the neutralizer into the surrounding plasma. The theory contains the observed barometric law relationship between electron density and electron temperatures and ion beam spreading in good agreement with measured results.

  1. Transfer Casting From Ion-Beam-Textured Surfaces

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Sovey, J. S.

    1986-01-01

    Textured surfaces created on metals, ceramics, and polymers. Electron-bombardment ion thrustor used as neutralized-ion-beam source. Beam of directed, energetic ions alter surface chemistry and/or morphology of many materials. By adjusting ion energy and ion-beam current density impinging upon target, precise surface modifications obtained without risk of targetmaterial melting or bulk decomposition. Technique developed to generate precise, controllable, surface microstructures on metals, ceramics, and polymers.

  2. Development of laser-ion beam photodissociation methods

    SciTech Connect

    Russell, D.H.

    1990-08-01

    During this report period our research efforts have concentrated on studies of the dissociation reactions of model peptides and other biologically important molecules. In addition, a considerable amount of research effort has been directed toward improving the apparatus used for laser-ion beam photodissociation. The instrumental improvements include some changes on the original apparatus, but most of this effort involved designing a second generation laser-ion beam photodissociation instrument.

  3. Characterization of Si-N films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Aggarwal, M. D.; Ashok, S.; Fonash, S. J.

    1982-05-01

    Application of silicon-nitride (Si-N) as a passivant in com-pound semiconductor technology requires a low-temperature deposition process to prevent dissociation of the volatile constituents of the semiconductor. With this in mind, an exploratory study of Si-N films prepared at room temperature using low-energy, reactive ion-beam sputtering has been carried out. The electrical and optical characteristics of the films have been studied, and an annealing step is found necessary to reduce the conductivity of the nitride and im-prove the interfacial properties.

  4. Diffraction grating couplers milled in Si3N4 rib waveguides with a focused ion beam.

    PubMed

    Zinoviev, Kirill; Dominguez, Carlos; Vilà, Anna

    2005-10-17

    Focused ion beam milling is a processing technology which allows flexible direct writing of nanometer scale features efficiently substituting electron beam lithography. No mask need results in ability for patterns writing even on fragile micromechanical devices. In this work we studied the abilities of the tool for fabrication of diffraction grating couplers in silicon nitride waveguides. The gratings were fabricated on a chip with extra fragile cantilevers of sub micron thickness. Optical characterization of the couplers was done using excitation of the waveguides in visible range by focused Gaussian beams of different waist sizes. Influence of Ga+ implantation on the device performance was studied.

  5. Nanostructured porous silicon by laser assisted electrochemical etching

    NASA Astrophysics Data System (ADS)

    Li, J.; Lu, C.; Hu, X. K.; Yang, Xiujuan; Loboda, A. V.; Lipson, R. H.

    2009-08-01

    Nanostructured porous silicon (pSi) was fabricated by combining electrochemical etching with 355 nm laser processing. pSi prepared in this way proves to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS). Surfaces prepared by electrochemical etching and laser irradiation exhibit strong quantum confinement as evidenced by the observation of a red shift in the Si Raman band at ~520-500 cm-1. The height of the nanostructured columns produced by electrochemical etching and laser processing is on the order of microns compared with tens of nanometers obtained without laser irradiation. The threshold for laser desorption and ionization of 12 mJ/cm2 using the pSi substrates prepared in this work is lower than that obtained for conventional matrix assisted laser desorption ionization (MALDI)-MS using a standard matrix compound such as [alpha]-cyano-4-hydroxycinnamic acid (CHCA; 30 mJ/cm2). Furthermore, the substrates prepared by etching and laser irradiation appear to resist laser damage better than those prepared by etching alone. These results enhance the capability of pSi for the detection of small molecular weight analytes by DIOS-MS.

  6. Ion Beam Synthesis of Transition Metal Nanoclusters in Silicon

    NASA Astrophysics Data System (ADS)

    Wesch, W.; Picht, O.; Steinert, M.; Undisz, A.; Rettenmayr, M.; Kaiser, U.; Biskupek, J.; Sobolev, N. A.

    2009-03-01

    The synthesis of materials combining ferromagnetism and semiconducting properties is of great interest for the development of devices for future electronics. Possible implementations of adding the spin degree of freedom to conventional semiconductors are the formation of diluted magnetic semiconductors (DMS's) and the synthesis of magnetic clusters embedded in semiconducting matrices. Despite the technological importance of Si, the former research has mostly been focused on II-VI, III-V and other compound semiconductors. Beside various layer deposition techniques, ion implantation in combination with subsequent thermal treatment is an excellent way to introduce the necessary high concentration of foreign atoms into the substrate. Especially the formation of magnetic clusters in semiconductors or DMS layers is of interest because they offer the possibility to achieve Curie temperatures above room temperature, which is a drawback of common DMS structures. In the present paper we have studied the formation of MnAs and MnSb nanoclusters in Si by co-implantation of Mn, As and Sb in combination with subsequent thermal annealing. In certain windows of the implantation and annealing parameters both Mn and As or Mn and Sb rich crystalline nanoclusters are formed that are partly phase-separated. The influence of the formation parameters on size, size distribution and composition of the nanocrystals as well as the role of atom diffusion are discussed. Results of magnetic analyses are presented as well.

  7. Laser cooling of a stored ion beam: A first step towards crystalline beams

    SciTech Connect

    Hangst, J.S.

    1992-09-01

    This report discusses: a brief introduction to storage rings; crystalline beams; laser cooling of ion beams; description of astrid-the experimental setup; first experiments with lithium 7 ion beam; experiments with erbium 166 ion beams; further experiments with lithium 7 ion beams; beam dynamics, laser cooling,and crystalline beams in astrid; possibilities for further study in astrid.

  8. Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

    SciTech Connect

    Meisner, L. L. Meisner, S. N.; Matveeva, V. A.; Matveev, A. L.

    2015-11-17

    The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ∼3400 and ∼6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

  9. Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

    NASA Astrophysics Data System (ADS)

    Meisner, L. L.; Matveeva, V. A.; Meisner, S. N.; Matveev, A. L.

    2015-11-01

    The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ˜3400 and ˜6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

  10. Mechanical and tribological properties of ion beam-processed surfaces

    SciTech Connect

    Kodali, Padma

    1998-01-01

    The intent of this work was to broaden the applications of well-established surface modification techniques and to elucidate the various wear mechanisms that occur in sliding contact of ion-beam processed surfaces. The investigation included characterization and evaluation of coatings and modified surfaces synthesized by three surface engineering methods; namely, beam-line ion implantation, plasma-source ion implantation, and DC magnetron sputtering. Correlation among measured properties such as surface hardness, fracture toughness, and wear behavior was also examined. This dissertation focused on the following areas of research: (1) investigating the mechanical and tribological properties of mixed implantation of carbon and nitrogen into single crystal silicon by beam-line implantation; (2) characterizing the mechanical and tribological properties of diamond-like carbon (DLC) coatings processed by plasma source ion implantation; and (3) developing and evaluating metastable boron-carbon-nitrogen (BCN) compound coatings for mechanical and tribological properties. The surface hardness of a mixed carbon-nitrogen implant sample improved significantly compared to the unimplanted sample. However, the enhancement in the wear factor of this sample was found to be less significant than carbon-implanted samples. The presence of nitrogen might be responsible for the degraded wear behavior since nitrogen-implantation alone resulted in no improvement in the wear factor. DLC coatings have low friction, low wear factor, and high hardness. The fracture toughness of DLC coatings has been estimated for the first time. The wear mechanism in DLC coatings investigated with a ruby slider under a contact stress of 1 GPa was determined to be plastic deformation. The preliminary data on metastable BCN compound coatings indicated high friction, low wear factor, and high hardness.

  11. Effect of different ion beam energy on properties of amorphous carbon film fabricated by ion beam sputtering deposition (IBSD)

    NASA Astrophysics Data System (ADS)

    Bai, Lichun; Zhang, Guangan; Wu, Zhiguo; Wang, Jun; Yan, Pengxun

    2011-09-01

    Amorphous carbon (a-C) films were fabricated by ion beam sputtering technique. The influence of sputtering ion beam energy on bonding structure, morphologic, mechanical properties, tribological properties and corrosion resistance of a-C films are investigated systematically. Morphology study shows that lowest surface roughness exists for mid-ion beam energy. Improved adhesion is observed for the films that are prepared under high ion beam energy, attributed to film graphitization, low residual stress and mixed interface. Relatively, a-C films prepared with ion beam energy of 2 keV exhibits optimum sp 3 bond content, mechanical properties and corrosion resistance. It is found that the wear rate of DLC films decrease with increased ion beam energy in general, consistent with the varied trend of the H/ E value which has been regarded as a suitable parameter for predicting wear resistance of the coatings. The correlation of the sp 3 bond fraction in the films estimated from Raman spectroscopy with residual stress, nanohardness and corrosion resistance has been established.

  12. Fast Ion Beam Microscopy of Whole Cells

    NASA Astrophysics Data System (ADS)

    Watt, Frank; Chen, Xiao; Chen, Ce-Belle; Udalagama, Chammika Nb; Ren, Minqin; Pastorin, G.; Bettiol, Andrew

    2013-08-01

    The way in which biological cells function is of prime importance, and the determination of such knowledge is highly dependent on probes that can extract information from within the cell. Probing deep inside the cell at high resolutions however is not easy: optical microscopy is limited by fundamental diffraction limits, electron microscopy is not able to maintain spatial resolutions inside a whole cell without slicing the cell into thin sections, and many other new and novel high resolution techniques such as atomic force microscopy (AFM) and near field scanning optical microscopy (NSOM) are essentially surface probes. In this paper we show that microscopy using fast ions has the potential to extract information from inside whole cells in a unique way. This novel fast ion probe utilises the unique characteristic of MeV ion beams, which is the ability to pass through a whole cell while maintaining high spatial resolutions. This paper first addresses the fundamental difference between several types of charged particle probes, more specifically focused beams of electrons and fast ions, as they penetrate organic material. Simulations show that whereas electrons scatter as they penetrate the sample, ions travel in a straight path and therefore maintain spatial resolutions. Also described is a preliminary experiment in which a whole cell is scanned using a low energy (45 keV) helium ion microscope, and the results compared to images obtained using a focused beam of fast (1.2 MeV) helium ions. The results demonstrate the complementarity between imaging using low energy ions, which essentially produce a high resolution image of the cell surface, and high energy ions, which produce an image of the cell interior. The characteristics of the fast ion probe appear to be ideally suited for imaging gold nanoparticles in whole cells. Using scanning transmission ion microscopy (STIM) to image the cell interior, forward scattering transmission ion microscopy (FSTIM) to improve the

  13. Bright focused ion beam sources based on laser-cooled atoms

    PubMed Central

    McClelland, J. J.; Steele, A. V.; Knuffman, B.; Twedt, K. A.; Schwarzkopf, A.; Wilson, T. M.

    2016-01-01

    Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga+ liquid metal ion source. In this review we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future. PMID:27239245

  14. Bright focused ion beam sources based on laser-cooled atoms

    SciTech Connect

    McClelland, J. J.; Wilson, T. M.; Steele, A. V.; Knuffman, B.; Schwarzkopf, A.; Twedt, K. A.

    2016-03-15

    Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga{sup +} liquid metal ion source. In this review, we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future.

  15. Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process Technology

    NASA Astrophysics Data System (ADS)

    Yamada, Isao; Matsuo, Jiro; Toyoda, Noriaki

    2008-11-01

    Processes employing clusters of ions comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications. In 2000, a four year R&D project for development of industrial technology began in Japan under funding from the New Energy and Industrial Technology Development Organization (NEDO). Subjects of the projects are in areas of equipment development, semiconductor surface processing, high accuracy surface processing and high-quality film formation. In 2002, another major cluster ion beam project which emphasized nano-technology applications has started under a contract from the Ministry of Economy and Technology for Industry (METI). This METI project involved development related to size-selected cluster ion beam equipment and processes, and development of GCIB processes for very high rate etching and for zero damage etching of magnetic materials and compound semiconductor materials. This paper describes summery of the results.

  16. Focused Ion Beam Fabrication of Graded Channel Field Effect Transistors (FETs) in GaAs and Si

    DTIC Science & Technology

    1988-11-21

    ion one encounters the phenomenon of Ion beam has radius r. In spherical coordinates p is the radius from the thermal spikes. In the immediate...Grefte. "Concentrarion profiles of boron implantations in amorphous .-- solving the Schrodinger equation for small sys- and polvctystalline silicon...We have conducted numerical simulations of laterally graded Gunn diodes using a transient energy model derived from Boltzmann’s transport equation in

  17. Facile fabrication of nanogap electrodes for suspended graphene characterization using direct ion beam patterning

    NASA Astrophysics Data System (ADS)

    Qi, Zhengqing John; Johnson, A. T. Charlie

    2014-03-01

    Graphene is a two-dimensional sheet of carbon atoms with exceptional electronic and mechanical properties, giving it tremendous potential in nanoelectromechanical system devices. Here, we present a method to easily and reproducibly fabricate suspended graphene nanoribbons across nanogap electrodes of various separation lengths, demonstrating a technique with aggressive gap scalability and device geometry control. Fabrication is based on using a focused gallium ion beam to create a slit between joined electrodes prepatterened on a 100 nm thick silicon nitride membrane. The transparency of the nitride membrane provides reduced ion backscattering and adds milling resolution. Large-area monolayer graphene grown by atmospheric pressure chemical vapor deposition was transferred onto the silicon nitride chip and patterned into a free-standing ribbon geometry via electron beam lithography on organic ebeam resist followed by an O2 plasma etch. We find that commonly used inorganic negative tone resist that requires a buffered oxide etch for resist removal will attack the adhesion layer (Cr2O3) between the electrode and nitride membrane, which is exposed immediately after milling, so an organic resist was selected to avoid this. Using this technique, we fabricate freestanding graphene devices contacted by electrodes of sub-100 nm separation length and preform a comparative study on the effects of current annealing on device resistance. The gap resolution of this technique is limited by the gallium ion beam, which allows for sub-100 nm gaps. Sub-10 nm gaps are feasible with He ion beams, proving direct applications in probing the high field transport properties of graphene nanoribbons at post-CMOS length scales.

  18. Ion Beam Induced Surface Modulations from Nano to Pico: Optimizing Deposition During Erosion and Erosion During Deposition.

    SciTech Connect

    MoberlyChan, W J; Schalek, R

    2007-11-08

    Ion beams of sufficient energy to erode a surface can lead to surface modulations that depend on the ion beam, the material surface it impinges, and extrinsic parameters such as temperature and geometric boundary conditions. Focused Ion Beam technology both enables site-specific placement of these modulations and expedites research through fast, high dose and small efficient use of material. The DualBeam (FIB/SEM) enables in situ metrology, with movies observing ripple formation, wave motion, and the influence of line defects. Nanostructures (ripples of >400nm wavelength to dots spaced <40nm) naturally grow from atomically flat surfaces during erosion, however, a steady state size may or may not be achieved as a consequence of numerous controlled parameters: temperature, angle, energy, crystallography. Geometric factors, which can be easily invoked using a FIB, enable a controlled component of deposition (and/or redeposition) to occur during erosion, and conversely allow a component of etching to be incurred during (ion-beam assisted) deposition. High angles of ion beam inclination commonly lead to 'rougher' surfaces, however, the extreme case of 90.0{sup o} etching enables deposition of organized structures 1000 times smaller than the aforementioned, video-recorded nanostructures. Orientation and position of these picostructures (naturally quantized by their atomic spacings) may be controlled by the same parameters as for nanostructures (e.g. ion inclination and imposed boundary conditions, which are flexibly regulated by FIB). Judicious control of angles during FIB-CVD growth stimulates erosion with directionality that produces surface modulations akin to those observed for sputtering. Just as a diamond surface roughens from 1-D ripples to 2-D steps with increasing angle of ion sputtering, so do ripples and steps appear on carbon-grown surfaces with increase in angle of FIB-CVD. Ion beam processing has been a stalwart of the microelectronics industry, is now a

  19. DEVELOPMENT OF EMITTANCE ANALYSIS SOFTWARE FOR ION BEAM CHARACTERIZATION

    SciTech Connect

    Padilla, M. J.; Liu, Y.

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a fi gure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally a high quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifi eld Radioactive Ion beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profi les, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fi tting are also incorporated into the software. The software will provide a simplifi ed, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate.

  20. Electron-Cloud Effects on Heavy-Ion Beams

    SciTech Connect

    Azevedo, T; Friedman, A; Cohen, R; Vay, J

    2004-03-29

    Stray electrons can be introduced in positive-charge accelerators for heavy ion fusion (or other applications) as a result of ionization of ambient gas or gas released from walls due to halo-ion impact, or as a result of secondary-electron emission. We are developing a capability for self-consistent simulation of ion beams with the electron clouds they produce. We report on an ingredient in this capability, the effect of specified electron cloud distributions on the dynamics of a coasting ion beam. We consider here electron distributions with axially varying density, centroid location, or radial shape, and examine both random and sinusoidally varying perturbations. We find that amplitude variations are most effective in spoiling ion beam quality, though for sinusoidal variations which match the natural ion beam centroid oscillation or breathing mode frequencies, the centroid and shape perturbations can also be effective. We identify a possible instability associated with resonance with the beam-envelope ''breathing'' mode. One conclusion from this study is that heavy-ion beams are surprisingly robust to electron clouds, compared to a priori expectations.

  1. Application of ion beams for polymeric carbon based biomaterials

    NASA Astrophysics Data System (ADS)

    Evelyn, A. L.

    2001-07-01

    Ion beams have been shown to be quite suitable for the modification and analysis of carbon based biomaterials. Glassy polymeric carbon (GPC), made from cured phenolic resins, has a high chemical inertness that makes it useful as a biomaterial in medicine for drug delivery systems and for the manufacture of heart valves and other prosthetic devices. Low and high-energy ion beams have been used, with both partially and fully cured phenolic resins, to enhance biological cell/tissue growth on, and to increase tissue adhesion to GPC surfaces. Samples bombarded with energetic ion beams in the keV to MeV range exhibited increased surface roughness, measured using optical microscopy and atomic force microscopy. Ion beams were also used to perform nuclear reaction analyses of GPC encapsulated drugs for use in internal drug delivery systems. The results from the high energy bombardment were more dramatic and are shown in this paper. The interaction of energetic ions has demonstrated the useful application of ion beams to enhance the properties of carbon-based biomaterials.

  2. Amending the uniformity of ion beam current density profile

    NASA Astrophysics Data System (ADS)

    Zhou, Xiaowei; Xu, Dequan; Liu, Ying; Xu, Xiangdong; Fu, Shaojun

    2008-03-01

    The uniformity of ion beam current density profile has been amended by changing the flow of the gas and making a new beam channel. The platform scanned in the horizontal orientation in this experiment, so the horizontal ion beam current distribution had hardly any effect on the etching uniformity and amending the ion beam current density profile in the vertical orientation was sufficient for the purpose of plat etching profile. The ratio of the ion source's working gas inputs has some effect for the uniformity and a ratio of 6.50sccm: 8.00sccm: 9.60sccm of the three gas inputs flow1: flow2: flow3 will lead to a more uniform profile. According to the horizontal distribution and the original vertical ion beam current density distribution measured by Faraday Cup, a new beam channel was made. The uniformity of ion beam current density profile is enhanced from +/-4.31%to +/-1.96% in this experiment.

  3. Ion Beam Neutralization Using FEAs and Mirror Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Nicolaescu, Dan; Sakai, Shigeki; Gotoh, Yasuhito; Ishikawa, Junzo

    2011-01-01

    Advanced implantation systems used for semiconductor processing require transportation of ion beams which are quasi-parallel and have low energy, such as (11B+,31P+,75As+) with energy in the range Eion = 200-1000 eV. Compensation of ion beam divergence may be obtained through electron injection and confinement in regions of non-uniform magnetic fields. Field emitter arrays with special properties are used as electron sources. The present study shows that electron confinement takes place in regions of gradient magnetic field, such as nearby analyzing, collimator and final energy magnets of the ion beam line. Modeling results have been obtained using Opera3D/Tosca/Scala. In regions of gradient magnetic field, electrons have helical trajectories which are confined like a cloud inside curved "magnetic bottles". An optimal range of positions with respect to the magnet for placing electron sources in gradient magnetic field has been shown to exist.

  4. Dust particle diffusion in ion beam transport region

    SciTech Connect

    Miyamoto, N.; Okajima, Y.; Romero, C. F.; Kuwata, Y.; Kasuya, T.; Wada, M.

    2016-02-15

    Dust particles of μm size produced by a monoplasmatron ion source are observed by a laser light scattering. The scattered light signal from an incident laser at 532 nm wavelength indicates when and where a particle passes through the ion beam transport region. As the result, dusts with the size more than 10 μm are found to be distributed in the center of the ion beam, while dusts with the size less than 10 μm size are distributed along the edge of the ion beam. Floating potential and electron temperature at beam transport region are measured by an electrostatic probe. This observation can be explained by a charge up model of the dust in the plasma boundary region.

  5. Surface modification using low energy ground state ion beams

    NASA Technical Reports Server (NTRS)

    Chutjian, Ara (Inventor); Hecht, Michael H. (Inventor); Orient, Otto J. (Inventor)

    1990-01-01

    A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux, and energy is presented. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation. One area of application is in the manufacture of semiconductor devices from semiconductor wafers.

  6. Ohmic heated sheet for the Ca ion beam production

    SciTech Connect

    Efremov, A.; Bogomolov, S.; Kazarinov, N.; Kochagov, O.; Loginov, V.

    2008-02-15

    The production of intense accelerated {sup 48}Ca ion beams is the key problem in the experiments on the synthesis of new superheavy nuclei. For this purpose in the FLNR (JINR), an electron cyclotron resonance ion source is used at the U-400 cyclotron. The combination of a micro oven with a hot tantalum sheet inside the discharge chamber allowed the production of the intense {sup 48}Ca{sup 5+} ion beam at the {sup 48}Ca consumption of about 0.5 mg/h. In this case, the tantalum sheet is heated by microwaves and plasma electrons. The microwave power of up to 500 W is required to heat the sheet to the temperature of about 500 deg. C. To decrease the required microwave power, a new sheet with a direct Ohmic heating was designed. The present paper describes the method, technique, and preliminary experimental results on the production of the Ca ion beam.

  7. Ion-beam focusing in a double-plasma device

    NASA Technical Reports Server (NTRS)

    Johnson, James C.; D'Angelo, Nicola; Merlino, Robert L.

    1988-01-01

    The authors studied the propagation of a low-energy charge-neutralized ion beam injected into the target region of a long double-plasma device. A magnetic field of up to about 180 G may be applied along the axis of the device. As a result of charge exchange collisions, the ion beam is attenuated as it propagates into the target region. However, under certain conditions of magnetic field strength and neutral gas pressure, the authors have observed a `reemergence' of the beam on axis far downstream in the target. This reemergence of the ion beam is attributed to a focusing of the ions by a self-consistently produced radial ambipolar electric field. The effect may be expected to occur in other types of plasma devices as well, whenever a sufficiently large radially inward electric field is present.

  8. Neutralization tests on the SERT II spacecraft. [of ion beams

    NASA Technical Reports Server (NTRS)

    Kerslake, W. R.; Domitz, S.

    1979-01-01

    Orbit precession returned the SERT II spacecraft to continuous sunlight in January 1979 for the first time since early 1972, and new experiments were planned and conducted. Neutralization of an ion beam was accomplished by a second neutralizer cathode located 1 meter away. Plasma potential measurements were made of the plasma surrounding the ion beam and connecting the beam to the second neutralizer. When the density of the connecting plasma was increased by turning on the main discharge of a neighboring ion thruster, the neutralization of the ion beam occurred with improved (lower) coupling voltage. These and other tests reported should aid in the future design of spacecraft using electric thruster systems. Data taken indicate that cross neutralization of ion thrusters in a multiple thruster array should occur readily.

  9. A Multicusp Ion Source for Radioactive Ion Beams

    NASA Astrophysics Data System (ADS)

    Wutte, D.; Freedman, S.; Gough, R.; Lee, Y.; Leitner, M.; Leung, K. N.; Lyneis, C.; Picard, D. S.; Sun, L.; Williams, M. D.; Xie, Z. Q.

    1997-05-01

    In order to produce a radioactive ion beam of (14)O+, a 10-cm-diameter, 13.56 MHz radio frequency (rf) driven multicusp ion source is now being developed at Lawrence Berkeley National Laboratory. In this paper we describe the specific ion source design and the basic ion source characteristics using Ar, Xe and a 90types of measurements have been performed: extractable ion current, ion species distributions, gas efficiency, axial energy spread and ion beam emittance measurements. The source can generate ion current densities of approximately 60 mA/cm2 . In addition the design of the ion beam extraction/transport system for the actual experimental setup for the radioactive beam line will be presented.

  10. Structural properties of ion beam mixed tungsten/steel layers

    NASA Astrophysics Data System (ADS)

    Piatkowska, A.; Jagielski, J.; Kopcewicz, M.; Matz, W.; Zalar, A.; Mozetic, M.

    2003-05-01

    Structural properties of Kr ion beam mixed layers of tungsten deposited on high-speed steel have been studied by using Grazing incidence X-ray diffraction, conversion electron Mössbauer spectroscopy and Auger electron spectroscopy techniques. The results show that ion beam mixing at room temperature leads to the formation of an amorphous layer composed of the mixture of amorphous tungsten and amorphous Fe-W phase. The amorphous structure is stable upon annealing up to at least 450 °C. The ion beam mixing at the temperatures above 350 °C results in the formation of crystalline W 2C phase in addition to the amorphous Fe-W one persisting up to at least 450 °C.

  11. Nonintrusive position measurement of magnetically scanned ion beams

    NASA Astrophysics Data System (ADS)

    Szajnowski, W. J.

    1989-02-01

    In ion implantation systems using a hybrid magnetic-mechanical scanning, the scan along the implant disc radius is realized by magnetic scanning of an ion beam at an average frequency of 0.1 Hz. To achieve a uniform implant, a relationship has to be known between the scanning magnetic field and the resulting ion beam position. A measuring system has been developed to estimate the lateral position of an ion beam without interfering physically with the beam. The beam position is inferred from two random signals induced by the beam on two sensing electrodes, obtained by splitting a bias ring of the implanter's Faraday system. The beam-induced signals are processed digitally and the position estimate, represented by a 9-bit number, is updated at 1.5 ms (or 12 ms) intervals. Preliminary tests have demonstrated that the technique presented can be exploited for adaptive shaping of a current waveform driving the scan magnet.

  12. Mutation induced with ion beam irradiation in rose

    NASA Astrophysics Data System (ADS)

    Yamaguchi, H.; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y.

    2003-05-01

    The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

  13. Laser-driven shock acceleration of monoenergetic ion beams.

    PubMed

    Fiuza, F; Stockem, A; Boella, E; Fonseca, R A; Silva, L O; Haberberger, D; Tochitsky, S; Gong, C; Mori, W B; Joshi, C

    2012-11-21

    We show that monoenergetic ion beams can be accelerated by moderate Mach number collisionless, electrostatic shocks propagating in a long scale-length exponentially decaying plasma profile. Strong plasma heating and density steepening produced by an intense laser pulse near the critical density can launch such shocks that propagate in the extended plasma at high velocities. The generation of a monoenergetic ion beam is possible due to the small and constant sheath electric field associated with the slowly decreasing density profile. The conditions for the acceleration of high-quality, energetic ion beams are identified through theory and multidimensional particle-in-cell simulations. The scaling of the ion energy with laser intensity shows that it is possible to generate ~200 MeV proton beams with state-of-the-art 100 TW class laser systems.

  14. Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

    NASA Astrophysics Data System (ADS)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

    2012-02-01

    Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

  15. EBIS charge breeder for radioactive ion beams at ATLAS.

    SciTech Connect

    Ostroumov, P.; Kondrashev, S.; Pardo, R.; Savard, G.; Vondrasek, R.; Alessi, J.; Beebe, E.; Pikin, A.

    2010-07-01

    The construction of the Californium Rare Isotope Breeder Upgrade (CARIBU) for the Argonne National Laboratory ATLAS facility is completed and its commissioning is being performed. In its full capacity, the CARIBU facility will use fission fragments from a 1 Curie (Ci) {sup 252}Cf source. The ions will be thermalized and collected into a low-energy ion beam by a helium gas catcher, mass analyzed by an isobar separator, and charge bred to higher charge states for acceleration in ATLAS. To reach energies E/A 10 MeV/u, one should inject ions with charge-to-mass ratio (q/A) {ge} 1/7 into the ATLAS linac. In the first stage, the existing Electron Cyclotron Resonance (ECR) ion source will be used as a charge breeder. The maximum intensity of radioactive ion beams at the output of the gas catcher will not exceed 10{sup 7} ions per second. A charge breeder based on an Electron Beam Ion Source (EBIS) has significant advantages over the ECR option for ion beam intensities up to about 10{sup 9} ions per second, providing 3-4 times higher efficiency and significantly better purity of highly charged radioactive ion beams for further acceleration. The proposed EBIS project for CARIBU will heavily utilize state-of-the-art EBIS technology recently developed at Brookhaven National Laboratory. This will allow us to reduce both the project cost and timescale, simultaneously insuring reliable technical realization of the cutting-edge technology. Several parameters of the CARIBU EBIS charge breeder (EBIS-CB) will be relaxed with respect to the BNL EBIS in favor of higher reliability and lower cost. Technical performance of the CARIBU charge breeder will not suffer from such a relaxation and will provide high efficiency for a whole range of radioactive ion beams. The goal of this paper is to present the initial design of the EBIS charge breeder for radioactive ion beams at ATLAS.

  16. EBIS charge breeder for radioactive ion beams at ATLAS

    NASA Astrophysics Data System (ADS)

    Ostroumov, P.; Kondrashev, S.; Pardo, R.; Savard, G.; Vondrasek, R.; Alessi, J.; Beebe, E.; Pikin, A.

    2010-07-01

    The construction of the Californium Rare Isotope Breeder Upgrade (CARIBU) for the Argonne National Laboratory ATLAS facility is completed and its commissioning is being performed. In its full capacity, the CARIBU facility will use fission fragments from a 1 Curie (Ci) 252Cf source. The ions will be thermalized and collected into a low-energy ion beam by a helium gas catcher, mass analyzed by an isobar separator, and charge bred to higher charge states for acceleration in ATLAS. To reach energies E/A 10 MeV/u, one should inject ions with charge-to-mass ratio (q/A) >= 1/7 into the ATLAS linac. In the first stage, the existing Electron Cyclotron Resonance (ECR) ion source will be used as a charge breeder. The maximum intensity of radioactive ion beams at the output of the gas catcher will not exceed 107 ions per second. A charge breeder based on an Electron Beam Ion Source (EBIS) has significant advantages over the ECR option for ion beam intensities up to about 109 ions per second, providing 3-4 times higher efficiency and significantly better purity of highly charged radioactive ion beams for further acceleration. The proposed EBIS project for CARIBU will heavily utilize state-of-the-art EBIS technology recently developed at Brookhaven National Laboratory. This will allow us to reduce both the project cost and timescale, simultaneously insuring reliable technical realization of the cutting-edge technology. Several parameters of the CARIBU EBIS charge breeder (EBIS-CB) will be relaxed with respect to the BNL EBIS in favor of higher reliability and lower cost. Technical performance of the CARIBU charge breeder will not suffer from such a relaxation and will provide high efficiency for a whole range of radioactive ion beams. The goal of this paper is to present the initial design of the EBIS charge breeder for radioactive ion beams at ATLAS.

  17. EBIS charge breeder for radioactive ion beams at ATLAS

    SciTech Connect

    Ostroumov, P.; Alessi, J.; Kondrashev, S.; Pardo, R.; Savard, G.; Vondrasek, R.; Beebe, E.; Pikin, A.

    2010-07-20

    The construction of the Californium Rare Isotope Breeder Upgrade (CARIBU) for the Argonne National Laboratory ATLAS facility is completed and its commissioning is being performed. In its full capacity, the CARIBU facility will use fission fragments from a 1 Curie (Ci) {sup 252}Cf source. The ions will be thermalized and collected into a low-energy ion beam by a helium gas catcher, mass analyzed by an isobar separator, and charge bred to higher charge states for acceleration in ATLAS. To reach energies E/A 10 MeV/u, one should inject ions with charge-to-mass ratio (q/A) {ge} 1/7 into the ATLAS linac. In the first stage, the existing Electron Cyclotron Resonance (ECR) ion source will be used as a charge breeder. The maximum intensity of radioactive ion beams at the output of the gas catcher will not exceed 10{sup 7} ions per second. A charge breeder based on an Electron Beam Ion Source (EBIS) has significant advantages over the ECR option for ion beam intensities up to about 10{sup 9} ions per second, providing 3-4 times higher efficiency and significantly better purity of highly charged radioactive ion beams for further acceleration. The proposed EBIS project for CARIBU will heavily utilize state-of-the-art EBIS technology recently developed at Brookhaven National Laboratory. This will allow us to reduce both the project cost and timescale, simultaneously insuring reliable technical realization of the cutting-edge technology. Several parameters of the CARIBU EBIS charge breeder (EBIS-CB) will be relaxed with respect to the BNL EBIS in favor of higher reliability and lower cost. Technical performance of the CARIBU charge breeder will not suffer from such a relaxation and will provide high efficiency for a whole range of radioactive ion beams. The goal of this paper is to present the initial design of the EBIS charge breeder for radioactive ion beams at ATLAS.

  18. Low energy ion beam dynamics of NANOGAN ECR ion source

    NASA Astrophysics Data System (ADS)

    Kumar, Sarvesh; Mandal, A.

    2016-04-01

    A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

  19. STAINING-ASSISTED REMOVAL OF SILICONE OIL FOR THE IDENTIFICATION OF SUBCLINICAL PROLIFERATIVE VITREORETINOPATHY.

    PubMed

    Rizzo, Stanislao; Barca, Francesco; Faraldi, Francesco; Caporossi, Tomasso; Virgili, Gianni

    2016-12-30

    Retinal detachment is a frequent complication after removal of silicone oil (ROSO). A retrospective study was conducted to determine whether staining-assisted removal of silicone oil (st-ROSO) allowed better identification and removal of proliferative vitreoretinopathy (PVR) processes compared with a conventional removal of silicone oil technique. All individuals underwent pars plana vitrectomy (PPV) and silicone oil fill-in for complicated retinal detachments. In conventional removal of silicone oil (Group 1), no staining was used. In staining-assisted removal of silicone oil (Group 2), a mixture of trypan blue and brilliant blue G dyes was used to identify proliferative vitreoretinopathy and subclinical epiretinal membrane. After the first 3-month follow-up, 15.9% of patients (N = 608) developed a retinal detachment. Retinal detachment occurred in 22.8% of patients in Group 1 (n = 284) and 9.8% of patients in Group 2 (n = 324; P < 0.001). In Group 2, proliferative vitreoretinopathy removal was performed in 153 eyes (47.2%). The incidence of retinal redetachment was significantly lower after staining-assisted removal of silicone oil compared with a conventional technique. Staining-assisted removal of silicone oil allowed better identification and removal of proliferative vitreoretinopathy processes.

  20. Microwave-assisted synthesis of biofunctional and fluorescent silicon nanoparticles using proteins as hydrophilic ligands.

    PubMed

    Zhong, Yiling; Peng, Fei; Wei, Xinpan; Zhou, Yanfeng; Wang, Jie; Jiang, Xiangxu; Su, Yuanyuan; Su, Shao; Lee, Shuit-Tong; He, Yao

    2012-08-20

    Protective shell: A microwave-assisted method allows rapid production of biofunctional and fluorescent silicon nanoparticles (SiNPs), which can be used for cell labeling. Such SiNPs feature excellent aqueous dispersibility, are strongly fluorescent, storable, photostable, stable at different pH values, and biocompatible. The method opens new avenues for designing multifunctional SiNPs and related silicon nanostructures.

  1. Surface Modification Energized by Focused Ion Beam: The Influence of Etch Rates & Aspect Ratio on Ripple Wavelengths.

    SciTech Connect

    MoberlyChan, W J

    2006-11-15

    Ion beams have been used to modify surface topography, producing nanometer-scale modulations (and even subnanometer ripples in this work) that have potential uses ranging from designing self-assembly structures, to controlling stiction of micromachined surfaces, to providing imprint templates for patterned media. Modern computer-controlled Focused Ion Beam tools enable alternating submicron patterned zones of such ion-eroded surfaces, as well as dramatically increasing the rate of ion beam processing. The DualBeam FIB/SEM also expedites process development while minimizing the use of materials that may be precious (Diamond) and/or produce hazardous byproducts (Beryllium). A FIB engineer can prototype a 3-by-3-by-3 matrix of variables in tens of minutes and consume as little as zeptoliters of material; whereas traditional ion beam processing would require tens of days and tens of precious wafers. Saturation wavelengths have been reported for ripples on materials such as single crystal silicon or diamond ({approx}200nm); however this work achieves wavelengths >400nm on natural diamond. Conversely, Be can provide a stable and ordered 2-dimensional array of <40nm periodicity; and ripples <0.4nm are also fabricated on carbon surfaces and quantified by HR-TEM and electron diffraction. Rippling is a function of material, ion beam, and angle; but is also controlled by chemical environment, redeposition, and aspect ratio. Ideally a material exhibits a constant yield (atoms sputtered off per incident ion); however, pragmatic FIB processes, coupled with the direct metrological feedback in a DualBeam tool, reveal etch rates do not remain constant for nanometer-scale processing. Control of rippling requires controlled metrology, and robust software tools are developed to enhance metrology. In situ monitoring of the influence of aspect ratio and redeposition at the micron scale correlates to the rippling fundamentals that occur at the nanometer scale and are controlled by the

  2. Shunting arc plasma source for pure carbon ion beam.

    PubMed

    Koguchi, H; Sakakita, H; Kiyama, S; Shimada, T; Sato, Y; Hirano, Y

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA∕mm(2) at the peak of the pulse.

  3. Polarization Studies in Fast-Ion Beam Spectroscopy

    SciTech Connect

    Trabert, E

    2001-12-20

    In a historical review, the observations and the insight gained from polarization studies of fast ions interacting with solid targets are presented. These began with J. Macek's recognition of zero-field quantum beats in beam-foil spectroscopy as indicating alignment, and D.G. Ellis' density operator analysis that suggested the observability of orientation when using tilted foils. Lastly H. Winter's studies of the ion-beam surface interaction at grazing incidence yielded the means to produce a high degree of nuclear orientation in ion beams.

  4. Experimental Studies of Ion Beam Neutralization: Preliminary Results

    SciTech Connect

    Ding, N.; Polansky, J.; Downey, R.; Wang, J.

    2011-05-20

    A testing platform is designed to study ion beam neutralization in the mesothermal, collisionless region. In the experimental setup, argon neutrals were ionized in a microwave cavity and accelerated by a plasma lens system which was biased to 2500 V above the system ground. Electrons were boiled off from two hot tungsten filaments to neutralize the ion beam. The plasma is diagnosed using Langmuir probe and Faraday probe. A 3-D traversing system and a complete data acquisition loop were developed to efficiently measure 3-D beam profile. Preliminary measurements of beam profiles are presented for different operating conditions.

  5. MEMS based ion beams for fusion

    NASA Astrophysics Data System (ADS)

    Persaud, A.; Seidl, P. A.; Ji, Q.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Vinayakumar, K. B.; Schaffer, Z. A.; Lal, A.

    2016-10-01

    Micro-Electro-Mechanical Systems (MEMS) fabrication provides an exciting opportunity to shrink existing accelerator concepts to smaller sizes and to reduce cost by orders of magnitude. We revisit the concept of a Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) and show how, with current technologies, the concept can be downsized from gap distances of several cm to distances in the sub-mm regime. The basic concept implements acceleration gaps using radio frequency (RF) fields and electrostatic quadrupoles (ESQ) on silicon wafers. First results from proof-of-concept experiments using printed circuit boards to realize the MEQALAC structures are presented. We show results from accelerating structures that were used in an array of nine (3x3) parallel beamlets with He ions at 15 keV. We will also present results from an ESQ focusing lattice using the same beamlet layout showing beam transport and matching. We also will discuss our progress in fabricating MEMS devices in silicon wafers for both the RF and ESQ structures and integration of necessary RF-circuits on-chip. The concept can be scaled up to thousands of beamlets providing high power beams at low cost and can be used to form and compress a plasma for the development of magnetized target fusion approaches. This work was supported by the Office of Science of the US Department of Energy through the ARPA-e ALPHA program under contracts DE-AC0205CH11231 (LBNL).

  6. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    SciTech Connect

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-11-13

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 {epsilon}o and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane.

  7. Overview of Light-Ion Beam Therapy

    SciTech Connect

    Chu, William T.

    2006-03-16

    compared to those in conventional (photon) treatments. Wilson wrote his personal account of this pioneering work in 1997. In 1954 Cornelius Tobias and John Lawrence at the Radiation Laboratory (former E.O. Lawrence Berkeley National Laboratory) of the University of California, Berkeley performed the first therapeutic exposure of human patients to hadron (deuteron and helium ion) beams at the 184-Inch Synchrocyclotron. By 1984, or 30 years after the first proton treatment at Berkeley, programs of proton radiation treatments had opened at: University of Uppsala, Sweden, 1957; the Massachusetts General Hospital-Harvard Cyclotron Laboratory (MGH/HCL), USA, 1961; Dubna (1967), Moscow (1969) and St Petersburg (1975) in Russia; Chiba (1979) and Tsukuba (1983) in Japan; and Villigen, Switzerland, 1984. These centers used the accelerators originally constructed for nuclear physics research. The experience at these centers has confirmed the efficacy of protons and light ions in increasing the tumor dose relative to normal tissue dose, with significant improvements in local control and patient survival for several tumor sites. M.R. Raju reviewed the early clinical studies. In 1990, the Loma Linda University Medical Center in California heralded in the age of dedicated medical accelerators when it commissioned its proton therapy facility with a 250-MeV synchrotron. Since then there has been a relatively rapid increase in the number of hospital-based proton treatment centers around the world, and by 2006 there are more than a dozen commercially-built facilities in use, five new facilities under construction, and more in planning stages. In the 1950s larger synchrotrons were built in the GeV region at Brookhaven (3-GeV Cosmotron) and at Berkeley (6-GeV Bevatron), and today most of the world's largest accelerators are synchrotrons. With advances in accelerator design in the early 1970s, synchrotrons at Berkeley and Princeton accelerated ions with atomic numbers between 6 and 18, at

  8. Ion Beam Transport Simulations for the 1.7 MV Tandem Accelerator at the Michigan Ion Beam Laboratory

    NASA Astrophysics Data System (ADS)

    Naab, F. U.; Toader, O. F.; Was, G. S.

    The Michigan Ion Beam Laboratory houses a 1.7 MV tandem accelerator. For many years this accelerator was configured to run with three ion sources: a TORoidal Volume Ion Source (TORVIS), a Duoplasmatron source and a Sputter source. In this article we describe an application we have created using the SIMION® code to simulate the trajectories of ion beams produced with these sources through the accelerator. The goal of this work is to have an analytical tool to understand the effect of each electromagnetic component on the ion trajectories. This effect is shown in detailed drawings. Each ion trajectory simulation starts at the aperture of the ion source and ends at the position of the target. Using these simulations, new accelerator operators or users quickly understand how the accelerator system works. Furthermore, these simulations allow analysis of modifications in the ion beam optics of the accelerator by adding, removing or replacing components or changing their relative positions.

  9. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    PubMed Central

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-01

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures. PMID:26776569

  10. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-01

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures.

  11. Ion beam assisted deposition of tribological coatings. Quarterly summary

    SciTech Connect

    Sartwell, B.D.

    1993-04-01

    TiN coatings 5 micrometers thick were deposited in UHV IBAD chamber onto M50 and Si substrates over a wide range of R (Ar-ion-to-Ti-atom ratio) values. Sputtering reduced the actual thickness at high R values, with two out of every three deposited Ti atoms being removed at R = 0.7. Because of charge exchange neutralization, it was possible to obtain coatings in the UHV IBAD system with properties equivalent to those deposited in the high vacuum IBAD system by using a higher apparent R value. Unless the extent of the charge exchange neutralization is known, it will not be possible to duplicate coating properties. Adhesion of the thick TiN coating deposited at R - 0.5 was equivalent to a magnetron sputtered TiN coating. Thick Cr{sub 2}O{sub 3} coatings were deposited onto M50 and Si substrates and wear testing was initiated. At high R values, sputtering prevented chemisorption of oxygen at surface. The wear process eliminated most of the surface topography.

  12. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures.

    PubMed

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-18

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar(+)) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar(+)-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar(+)-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures.

  13. Quantitative carbon ion beam radiography and tomography with a flat-panel detector.

    PubMed

    Telsemeyer, Julia; Jäkel, Oliver; Martišíková, Mária

    2012-12-07

    High dose gradients are inherent to ion beam therapy. This results in high sensitivity to discrepancies between planned and delivered dose distributions. Therefore an accurate knowledge of the ion stopping power of the traversed tissue is critical. One proposed method to ensure high quality dose deposition is to measure the stopping power by ion radiography. Although the idea of imaging with highly energetic ions is more than forty years old, there is a lack of simple detectors suitable for this purpose. In this study the performance of an amorphous silicon flat-panel detector, originally designed for photon imaging, was investigated for quantitative carbon ion radiography and tomography. The flat-panel detector was exploited to measure the water equivalent thickness (WET) and water equivalent path length (WEPL) of a phantom at the Heidelberg Ion-Beam Therapy Center (HIT). To do so, the ambiguous correlation of detector signal to particle energy was overcome by active or passive variation of carbon ion beam energy and measurement of the signal-to-beam energy correlation. The active method enables one to determine the WET of the imaged object with an uncertainty of 0.5 mm WET. For tomographic WEPL measurements the passive method was exploited resulting in an accuracy of 0.01 WEPL. The developed imaging technique presents a method to measure the two-dimensional maps of WET and WEPL of phantoms with a simple and commercially available detector. High spatial resolution of 0.8 × 0.8 mm(2) is given by the detector design. In the future this powerful tool will be used to evaluate the performance of the treatment planning algorithm by studying WET uncertainties.

  14. First atomic physics experiments with cooled stored ion beams at the Heidelberg heavy-ion ring TSR

    SciTech Connect

    Wolf, A.; Balykin, V.; Baumann, W.; Berger, J.; Bisoffi, G.; Blatt, P.; Blum, M.; Faulstich, A.; Friedrich, A.; Gerhard, M.; Geyer, C.; Grieser, M.; Grieser, R.; Habs, D.; Heyng, H.W.; Hochadel, B.; Holzer, B.; Huber, G.; Jaeschke, E.; Jung, M.; Karafillidis, A.; Kilgus, G.; Klein, R.; Kraemer, D.; Krause, P.; Krieg, M.; Kuehl, T.; Matl, K.; Mueller, A.; Music, M.; Neumann, R.; Neureither, G.; Ott, W.; Petrich, W.; Povh, B.; Repnow, R.; Schroeder, S.; Schuch, R.; Schwalm, D.; Sigray, P.; Steck, M.; Stokstad, R.; Szmola, E.; Wagner, M.; Wanner, B.; Welti, K.; Zwickler, S. Max-Planck-Institut fuer Kernphysik, Heidelberg Manne Siegbahn Institute , Stockholm Institut fuer Kernphysik, Universitaet Giessen, Institut fuer Physik, Universitaet Mainz Gesellschaft fuer Schwerionenforschung , Darmstadt (Fed

    1990-06-01

    An overview of atomic physics experiments at the heavy ion Test Storage Ring (TSR) is given. Highly charged ions up to fully stripped silicon have been stored at energies between 4 and 12 MeV/u. The enhancement of the beam intensity by stacking, the beam lifetime, and electron cooling of these ion beams are discussed. Radiative and state-selective dielectronic recombination rates of hydrogen-like oxygen ions with free electrons from the electron cooler were measured. Beam noise spectra are being investigated with regard to collective effects caused by the Coulomb interaction in the cold ion beams. Resonance fluorescence from stored single-charged ions was observed using tunable narrow-band lasers. First indications of laser cooling in a storage ring were seen.

  15. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  16. Applications of focused ion beam systems in gunshot residue investigation.

    PubMed

    Niewöhner, L; Wenz, H W

    1999-01-01

    Scanning ion microscopy technology has opened a new door to forensic scientists, allowing the GSR investigator to see inside a particle's core. Using a focused ion beam, particles can be cross-sectioned, revealing interior morphology and character that can be utilized for identification of the ammunition manufacturer.

  17. FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING

    SciTech Connect

    Cheng, H. H.; Alkaisi, M. M.; Wu, S. E.; Liu, C. P.

    2009-07-23

    In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO{sub 2} substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were electrically characterised using a semiconductor analyser that showed good ohmic contact to the electrodes. In this paper, the fabrication experiments and the characterisation results for Bi nanowires as small as 50 nm in diameter are presented. Several FIB issues involved in Bi device making and ohmic contacts to Bi nanowires will also be discussed.

  18. ECR plasma source for heavy ion beam charge neutralization

    SciTech Connect

    Efthimion, P.C.; Gilson, E.; Grisham, L.; Kolchin, P.; Davidson, E.C.; Yu, S.S.; Logan, B.G.

    2002-05-01

    Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order to focus beyond the space-charge limit. Calculations suggest that plasma at a density of 1-100 times the ion beam density and at a length {approx} 0.1-2 m would be suitable for achieving a high level of charge neutralization. An ECR source has been built at the Princeton Plasma Physics Laboratory (PPPL) to support a joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 1-10 gauss. The goal is to operate the source at pressures {approx} 10{sup -6} Torr at full ionization. The initial operation of the source has been at pressures of 10{sup -4}-10{sup -1} Torr. Electron densities in the range of 10{sup 8}-10{sup 11} cm{sup -3} have been achieved. Low-pressure operation is important to reduce ion beam ionization. A cusp magnetic field has been installed to improve radial confinement and reduce the field strength on the beam axis. In addition, axial confinement is believed to be important to achieve lower-pressure operation. To further improve breakdown at low pressure, a weak electron source will be placed near the end of the ECR source.

  19. Ultrahigh vacuum focused ion beam micromill and articles therefrom

    DOEpatents

    Lamartine, B.C.; Stutz, R.A.

    1998-02-24

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are disclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters. 6 figs.

  20. Calorimetric detection of neutral-atom content of ion beam

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.

    1974-01-01

    Energy deposition technique deduces neutral-beam flux or dose from measured values of incremental resistance increases in platinum wire passed through beam. Steady-state heat balance analysis led to equivalent neutral-beam current. Method was used to detect neutral-atom content of 60-keV argon ion beam.

  1. Ion beam and plasma methods of producing diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Swec, Diane M.; Mirtich, Michael J.; Banks, Bruce A.

    1988-01-01

    A variety of plasma and ion beam techniques was employed to generate diamondlike carbon films. These methods included the use of RF sputtering, dc glow discharge, vacuum arc, plasma gun, ion beam sputtering, and both single and dual ion beam deposition. Since films were generated using a wide variety of techniques, the physico-chemical properties of these films varied considerably. In general, these films had characteristics that were desirable in a number of applications. For example, the films generated using both single and dual ion beam systems were evaluated for applications including power electronics as insulated gates and protective coatings on transmitting windows. These films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Nuclear reaction and combustion analysis indicated hydrogen to carbon ratios to be 1.00, which allowed the films to have good transmittance not only in the infrared, but also in the visible. Other evaluated properties of these films include band gap, resistivity, adherence, density, microhardness, and intrinsic stress. The results of these studies and those of the other techniques for depositing diamondlike carbon films are presented.

  2. Drag of ballistic electrons by an ion beam

    SciTech Connect

    Gurevich, V. L.; Muradov, M. I.

    2015-12-15

    Drag of electrons of a one-dimensional ballistic nanowire by a nearby one-dimensional beam of ions is considered. We assume that the ion beam is represented by an ensemble of heavy ions of the same velocity V. The ratio of the drag current to the primary current carried by the ion beam is calculated. The drag current turns out to be a nonmonotonic function of velocity V. It has a sharp maximum for V near v{sub nF}/2, where n is the number of the uppermost electron miniband (channel) taking part in conduction and v{sub nF} is the corresponding Fermi velocity. This means that the phenomenon of ion beam drag can be used for investigation of the electron spectra of ballistic nanostructures. We note that whereas observation of the Coulomb drag between two parallel quantum wires may in general be complicated by phenomena such as tunneling and phonon drag, the Coulomb drag of electrons of a one-dimensional ballistic nanowire by an ion beam is free of such spurious effects.

  3. Ultrahigh vacuum focused ion beam micromill and articles therefrom

    DOEpatents

    Lamartine, Bruce C.; Stutz, Roger A.

    1998-01-01

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are isclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters.

  4. Ion beam synthesis of planar opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Polman, A.; Snoeks, E.; van den Hoven, G. N.; Brongersma, M. L.; Serna, R.; Shin, J. H.; Kik, P.; Radius, E.

    1995-12-01

    Photonic technology requires the modification and synthesis of new materials and devices for the generation, guiding, switching, multiplexing and amplification of light. This paper reviews how some of these devices may be made using ion beam synthesis. Special attention is paid to the fabrication of erbium-doped optical waveguides.

  5. Laser ion source for low charge heavy ion beams

    SciTech Connect

    Okamura,M.; Pikin, A.; Zajic, V.; Kanesue, T.; Tamura, J.

    2008-08-03

    For heavy ion inertial fusion application, a combination of a laser ion source and direct plasma injection scheme into an RFQ is proposed. The combination might provide more than 100 mA of singly charged heavy ion beam from a single laser shot. A planned feasibility test with moderate current is also discussed.

  6. Microfabricated Ion Beam Drivers for Magnetized Target Fusion

    NASA Astrophysics Data System (ADS)

    Persaud, Arun; Seidl, Peter; Ji, Qing; Ardanuc, Serhan; Miller, Joseph; Lal, Amit; Schenkel, Thomas

    2015-11-01

    Efficient, low-cost drivers are important for Magnetized Target Fusion (MTF). Ion beams offer a high degree of control to deliver the required mega joules of driver energy for MTF and they can be matched to several types of magnetized fuel targets, including compact toroids and solid targets. We describe an ion beam driver approach based on the MEQALAC concept (Multiple Electrostatic Quadrupole Array Linear Accelerator) with many beamlets in an array of micro-fabricated channels. The channels consist of a lattice of electrostatic quadrupoles (ESQ) for focusing and of radio-frequency (RF) electrodes for ion acceleration. Simulations with particle-in-cell and beam envelope codes predict >10x higher current densities compared to state-of-the-art ion accelerators. This increase results from dividing the total ion beam current up into many beamlets to control space charge forces. Focusing elements can be biased taking advantage of high breakdown electric fields in sub-mm structures formed using MEMS techniques (Micro-Electro-Mechanical Systems). We will present results on ion beam transport and acceleration in MEMS based beamlets. Acknowledgments: This work is supported by the U.S. DOE under Contract No. DE-AC02-05CH11231.

  7. Hydrodynamic Efficiency of Ablation Propulsion with Pulsed Ion Beam

    SciTech Connect

    Buttapeng, Chainarong; Yazawa, Masaru; Harada, Nobuhiro; Suematsu, Hisayuki; Jiang Weihua; Yatsui, Kiyoshi

    2006-05-02

    This paper presents the hydrodynamic efficiency of ablation plasma produced by pulsed ion beam on the basis of the ion beam-target interaction. We used a one-dimensional hydrodynamic fluid compressible to study the physics involved namely an ablation acceleration behavior and analyzed it as a rocketlike model in order to investigate its hydrodynamic variables for propulsion applications. These variables were estimated by the concept of ablation driven implosion in terms of ablated mass fraction, implosion efficiency, and hydrodynamic energy conversion. Herein, the energy conversion efficiency of 17.5% was achieved. In addition, the results show maximum energy efficiency of the ablation process (ablation efficiency) of 67% meaning the efficiency with which pulsed ion beam energy-ablation plasma conversion. The effects of ion beam energy deposition depth to hydrodynamic efficiency were briefly discussed. Further, an evaluation of propulsive force with high specific impulse of 4000s, total impulse of 34mN and momentum to energy ratio in the range of {mu}N/W was also analyzed.

  8. Ion beam surface treatment: A new capability for surface enhancement

    SciTech Connect

    Stinnett, R.W.; McIntyre, D.C.; Buchheit, R.G.; Neau, E.L.; Greenly, J.B.; Thompson, M.O.; Johnston, G.P.; Rej, D.J.

    1994-07-01

    The emerging capability to produce high average power (5--350 kW) pulsed ion beams at 0.2--2 MeV energies is enabling the authors to develop a new, commercial-scale thermal surface treatment technology called Ion Beam Surface Treatment (IBEST). This new technique uses high energy, pulsed ({<=}250 ns) ion beams to directly deposit energy in the top 2--20 micrometers of the surface of any material. The depth of treatment is controllable by varying the ion energy and species. Deposition of the energy with short pulses in a thin surface layer allows melting of the layer with relatively small energies and allows rapid cooling of the melted layer by thermal diffusion into the underlying substrate. Typical cooling rates of this process (10{sup 9}--10{sup 10} K/sec) cause rapid resolidification, resulting in the production of non-equilibrium microstructures (nano-crystalline and metastable phases) that have significantly improved corrosion, wear, and hardness properties. The authors conducted IBEST feasibility experiments with results confirming surface hardening, noncrystalline grain formation, metal surface polishing, controlled melt of ceramic surfaces, and surface cleaning using pulsed ion beams.

  9. Spin Observables in Reactions with Radioactive Ion Beams

    SciTech Connect

    Galindo-Uribarri, Alfredo {nmn}; Urrego Blanco, Juan Pablo

    2007-01-01

    Polarization observables in nuclear reactions with exotic nuclei will provide important information concerning structural properties of nuclei and reaction mechanisms. We are currently engaged in exploring the use of polarization observables with radioactive ion beams and in the development of a polarized cryogenic target.

  10. Edge envelope equation for a ballistically focused neutralized ion beam

    SciTech Connect

    Lemons, D.S.; Thode, L.E.

    1980-11-01

    An envelope equation for a cold ion beam with overall charge and current neutralization provided by a coflowing electron gas obeying an adiabatic equation of state is derived. The derivation assumes the beam evolves self-similarly with the ion at the edge of a uniform density ion profile. Numerical and approximate analytical solutions are calculated.

  11. Plasma ion sources and ion beam technology inmicrofabrications

    SciTech Connect

    Ji, Lili

    2007-01-01

    For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 μm-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance (25

  12. Electron trapping in high-current ion beam pipes

    SciTech Connect

    Herrmannsfeldt, W.B.

    2000-03-01

    The space charge voltage depression in a drifting heavy ion beam during the final stages of current pulse compression can be hundreds of kilovolts. For example, a 1kA beam of ions at beta = v/c = 0.4 would have a beam center-to-edge potential difference of 75kV. With suitable clearance from beam edge to the beam pipe, this amount is typically increased by a factor of 2 to 3 by the (1 + 2 ln(b/a)) term that accounts for the ratio of pipe radius to beam radius. Such high voltages, and resulting high electric fields at the pipe wall, will result in electrons being pulled into the beam pipe. These electrons which are emitted from the grounded beam pipe, will pass through the ion beam at high velocity and then turn around without (usually) striking the wall and continue to pass through the beam on repeated oscillations. It is possible to control the longitudinal motion of these trapped electrons by suitably varying the pipe size while considering the beam diameter. A segment of the beam pipe that has a larger diameter will result in a potential well that traps the electrons longitudinally. In a constant current scenario in a uniform pipe, the electrons will drift in the direction of the beam. However, the head and especially the tail of the ion beam will have a dramatic effect on the electrons, causing them to be pulled into the ion beam. These complex processes will continue until the ion beam passes through an optical element such as a beam transport magnet that will effectively block the motion of the electron clouds following the ions. In this paper, the authors will show examples of how electrons can be trapped and controlled by varying the conditions determining their emission and confinement. Ray tracing simulations using the EGN2[1] computer code will be used to model the electron trajectories in the presence of a high current heavy ion beam. The self magnetic field of the ion beam, while not sufficient to affect the ions themselves significantly, has a strong

  13. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  14. Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification

    NASA Astrophysics Data System (ADS)

    Zhu, Didi; Ming, Liang; Huang, Meiling; Zhang, Zhaoyu; Huang, Xinming

    2014-01-01

    An approach to grain control using seed-assisted growth in directional solidification (DS) is reported in this paper. Proper multi-crystalline silicon seeds at the bottom of the crucible provided numerous fine nucleation points for the controlled grain growth in an optimized hot-zone. Low dislocation density was observed with large numbers of uniform small grains in the silicon ingot, although the grain size increased with crystal growth. Crystals produced using seed-assisted growth showed a higher and more uniform minority carrier lifetime with a much lower dislocation multiplication rate. A higher average solar cell conversion efficiency of about 0.5% in absolute value was obtained in the seed-assisted grown silicon in comparison with that in the seedless silicon under the same cell fabrication process.

  15. Expansion of the radioactive ion beam program at Argonne

    NASA Astrophysics Data System (ADS)

    Clark, J. A.

    2011-01-01

    The Argonne Tandem Linear Accelerator System (ATLAS) at Argonne National Laboratory (ANL) provides a wide range of stable ion beams and radioactive beams which have contributed to our understanding of nuclear structure and reactions. Until now, most radioactive ion beams at ATLAS were produced in flight using light-ion reactions such as (p, n), (d, n), (d, p), (d,3He), and (3He,n). Within the next few months, the radioactive ion beam program at ATLAS will acquire much extended, new capabilities with the commissioning of a new facility: the CAlifornium Rare Isotope Breeder Upgrade (CARIBU). CARIBU will supply ion beams of 252Cf fission fragments, which are thermalized in a gas catcher. The singly- and doubly-charged ions extracted from the gas catcher will be mass-separated and either delivered to a low-energy experimental area, or charge bred with a modified ECR source and subsequently reaccelerated by the ATLAS facility. Properties of hundreds of these neutron-rich nuclides will be investigated using ion traps, decay stations, the newly commissioned HELical Orbit Spectrometer (HELIOS), and other available experimental equipment such as Gammasphere and the FMA. HELIOS was constructed to take advantage of rare ion beams, such as those provided by CARIBU, through light-ion transfer reactions in inverse kinematics, and represents a new approach to the study of direct reactions in inverse kinematics which avoids kinematic broadening. Experiments are currently being conducted with HELIOS, and first results with the d(28Si,p) and d(12B,p) reactions have shown excellent energy resolution.

  16. Preferential refilling and planarization of grooves with amorphous carbon by using gas cluster ion beam irradiations

    SciTech Connect

    Naito, K.; Toyoda, N.; Yamada, I.

    2011-01-07

    Surface planarization is important for fabrication of patterned media. One of the methods is smoothing of the patterned surface after deposition of refilling materials. However it requires two process steps. In this study, we studied planarization of patterned media by formation of refilling films with gas cluster ion beam (GCIB) assisted deposition to reduce the process step. Hard amorphous carbon films were deposited on line-and-space pattern (100 nm pitch, 20 nm in depth) by using Ar-GCIB assisted deposition. From the atomic force microscope and the cross-sectional transmission electron microscope observations, the line-and-space patterns were refilled with amorphous carbon films with Ar-GCIB assisted deposition and smooth surface was obtained. The thickness of the amorphous carbon film required for surface planarization was 32 nm, which was very small compared to the initial peak to valley (20 nm). By using this method, sputtering process for planarization can be omitted.

  17. Performance of MACACO Compton telescope for ion-beam therapy monitoring: first test with proton beams

    NASA Astrophysics Data System (ADS)

    Solevi, Paola; Muñoz, Enrique; Solaz, Carles; Trovato, Marco; Dendooven, Peter; Gillam, John E.; Lacasta, Carlos; Oliver, Josep F.; Rafecas, Magdalena; Torres-Espallardo, Irene; Llosá, Gabriela

    2016-07-01

    In order to exploit the advantages of ion-beam therapy in a clinical setting, delivery verification techniques are necessary to detect deviations from the planned treatment. Efforts are currently oriented towards the development of devices for real-time range monitoring. Among the different detector concepts proposed, Compton cameras are employed to detect prompt gammas and represent a valid candidate for real-time range verification. We present the first on-beam test of MACACO, a Compton telescope (multi-layer Compton camera) based on lanthanum bromide crystals and silicon photo-multipliers. The Compton telescope was first characterized through measurements and Monte Carlo simulations. The detector linearity was measured employing 22Na and Am-Be sources, obtaining about 10% deviation from linearity at 3.44 MeV. A spectral image reconstruction algorithm was tested on synthetic data. Point-like sources emitting gamma rays with energy between 2 and 7 MeV were reconstructed with 3-5 mm resolution. The two-layer Compton telescope was employed to measure radiation emitted from a beam of 150 MeV protons impinging on a cylindrical PMMA target. Bragg-peak shifts were achieved via adjustment of the PMMA target location and the resulting measurements used during image reconstruction. Reconstructed Bragg peak profiles proved sufficient to observe peak-location differences within 10 mm demonstrating the potential of the MACACO Compton Telescope as a monitoring device for ion-beam therapy.

  18. Performance of MACACO Compton telescope for ion-beam therapy monitoring: first test with proton beams.

    PubMed

    Solevi, Paola; Muñoz, Enrique; Solaz, Carles; Trovato, Marco; Dendooven, Peter; Gillam, John E; Lacasta, Carlos; Oliver, Josep F; Rafecas, Magdalena; Torres-Espallardo, Irene; Llosá, Gabriela

    2016-07-21

    In order to exploit the advantages of ion-beam therapy in a clinical setting, delivery verification techniques are necessary to detect deviations from the planned treatment. Efforts are currently oriented towards the development of devices for real-time range monitoring. Among the different detector concepts proposed, Compton cameras are employed to detect prompt gammas and represent a valid candidate for real-time range verification. We present the first on-beam test of MACACO, a Compton telescope (multi-layer Compton camera) based on lanthanum bromide crystals and silicon photo-multipliers. The Compton telescope was first characterized through measurements and Monte Carlo simulations. The detector linearity was measured employing (22)Na and Am-Be sources, obtaining about 10% deviation from linearity at 3.44 MeV. A spectral image reconstruction algorithm was tested on synthetic data. Point-like sources emitting gamma rays with energy between 2 and 7 MeV were reconstructed with 3-5 mm resolution. The two-layer Compton telescope was employed to measure radiation emitted from a beam of 150 MeV protons impinging on a cylindrical PMMA target. Bragg-peak shifts were achieved via adjustment of the PMMA target location and the resulting measurements used during image reconstruction. Reconstructed Bragg peak profiles proved sufficient to observe peak-location differences within 10 mm demonstrating the potential of the MACACO Compton Telescope as a monitoring device for ion-beam therapy.

  19. Development and Commissioning of an External Beam Facility in the Union College Ion Beam Analysis Laboratory

    NASA Astrophysics Data System (ADS)

    Yoskowitz, Joshua; Clark, Morgan; Labrake, Scott; Vineyard, Michael

    2015-10-01

    We have developed an external beam facility for the 1.1-MV tandem Pelletron accelerator in the Union College Ion Beam Analysis Laboratory. The beam is extracted from an aluminum pipe through a 1 / 4 ' ' diameter window with a 7.5- μm thick Kapton foil. This external beam facility allows us to perform ion beam analysis on samples that cannot be put under vacuum, including wet samples and samples too large to fit into the scattering chamber. We have commissioned the new facility by performing proton induced X-ray emission (PIXE) analysis of several samples of environmental interest. These include samples of artificial turf, running tracks, and a human tooth with an amalgam filling. A 1.7-MeV external proton beam was incident on the samples positioned 2 cm from the window. The resulting X-rays were measured using a silicon drift detector and were analyzed using GUPIX software to determine the concentrations of elements in the samples. The results on the human tooth indicate that while significant concentrations of Hg, Ag, and Sn are present in the amalgam filling, only trace amounts of Hg appear to have leached into the tooth. The artificial turf and running tracks show rather large concentrations of a broad range of elements and trace amounts of Pb in the turf infill.

  20. Laser-accelerated ion beam diagnostics with TOF detectors for the ELIMED beam line

    NASA Astrophysics Data System (ADS)

    Milluzzo, G.; Scuderi, V.; Amico, A. G.; Borghesi, M.; Cirrone, G. A. P.; Cuttone, G.; De Napoli, M.; Doria, D.; Dostal, J.; Larosa, G.; Leanza, R.; Margarone, D.; Petringa, G.; Pipek, J.; Romagnani, L.; Romano, F.; Schillaci, F.; Velyhan, A.

    2017-02-01

    Laser-accelerated ion beams could represent the future of particle acceleration in several multidisciplinary applications, as for instance medical physics, hadrontherapy and imaging field, being a concrete alternative to old paradigm of acceleration, characterized by huge and complex machines. In this framework, following on from the ELIMED collaboration, launched in 2012 between INFN-LNS and ELI-Beamlines, in 2014 a three-years contract has been signed between the two institutions for the design and the development of a complete transport beam-line for high-energy ion beams (up to 60 MeV) coupled with innovative diagnostics and in-air dosimetry devices. The beam-line will be installed at the ELI-Beamlines facility and will be available for users. The measurement of the beam characteristics, such as energy spectra, angular distributions and dose-rate is mandatory to optimize the transport as well as the beam delivery at the irradiation point. In order to achieve this purpose, the development of appropriate on-line diagnostics devices capable to detect high-pulsed beams with high accuracy, represents a crucial point in the ELIMED beamline development. The diagnostics solution, based on the use of silicon carbide (SiC) and diamond detectors using TOF technique, will be presented together with the preliminary results obtained with laser-accelerated proton beams.

  1. MeV ion beam lithography of biocompatible halogenated Parylenes using aperture masks

    NASA Astrophysics Data System (ADS)

    Whitlow, Harry J.; Norarat, Rattanaporn; Roccio, Marta; Jeanneret, Patrick; Guibert, Edouard; Bergamin, Maxime; Fiorucci, Gianni; Homsy, Alexandra; Laux, Edith; Keppner, Herbert; Senn, Pascal

    2015-07-01

    Parylenes are poly(p-xylylene) polymers that are widely used as moisture barriers and in biomedicine because of their good biocompatibility. We have investigated MeV ion beam lithography using 16O+ ions for writing defined patterns in Parylene-C, which is evaluated as a coating material for the Cochlear Implant (CI) electrode array, a neuroprosthesis to treat some forms of deafness. Parylene-C and -F on silicon and glass substrates as well as 50 μm thick PTFE were irradiated to different fluences (1 ×1013 - 1 ×1016 1 MeV 16O+ ions cm-2) through aperture masks under high vacuum and a low pressure (<10-3 mbar) oxygen atmosphere. Biocompatibility of the irradiated and unirradiated surfaces was tested by cell-counting to determine the proliferation of murine spiral ganglion cells. The results reveal that an oxygen ion beam can be used to pattern Parylene-C and -F without using a liquid solvent developer in a similar manner to PTFE but with a ∼25× smaller removal rate. Biocompatibility tests showed no difference in cell adhesion between irradiated and unirradiated areas or ion fluence dependence. Coating the Parylene surface with an adhesion-promoting protein mixture had a much greater effect on cell proliferation.

  2. Ion beam deposition of DLC and nitrogen doped DLC thin films for enhanced haemocompatibility on PTFE

    NASA Astrophysics Data System (ADS)

    Srinivasan, S.; Tang, Y.; Li, Y. S.; Yang, Q.; Hirose, A.

    2012-08-01

    Diamond-like carbon (DLC) and N-doped DLC (DLC:N) thin films have been synthesized on polytetrafluroethylene (PTFE) and silicon wafers using ion beam deposition. Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy were used to study the structural and morphological properties of the coated surface. The results show that the ion beam deposited DLC thin films exhibit high hardness and Young's modulus, low coefficient of friction and high adhesion to the substrate. Low concentration of nitrogen doping in DLC improves the mechanical properties and reduces the surface roughness. DLC coating decreases the surface energy and improves the wettability of PTFE. The platelet adhesion results show that the haemocompatibility of DLC coated PTFE, especially DLC:N coated PTFE, has been significantly enhanced as compared with uncoated PTFE. SEM observations show that the platelet reaction on the DLC and DLC:N coated PTFE was minimized as the platelets were much less aggregated and activated.

  3. Progress in bright ion beams for industry, medicine and fusion at LBNL

    SciTech Connect

    Kwan, Joe W.

    2002-05-31

    Recent progresses at LBNL in developing ion beams for industry, radiation therapy and inertial fusion applications were discussed. The highlights include ion beam lithography, boron neutron capture therapy (BNCT), and heavy ion fusion (HIF) drivers using multiple linacs.

  4. Computer-assisted infrared spectra interpretation for amorphous silicon alloys

    NASA Astrophysics Data System (ADS)

    Kavak, Hamide; Esen, Ramazan

    2005-12-01

    A computer program for the structural interpretation of the infrared (IR) spectra is developed and tested. The interpretation of the IR spectra is made by using an hybrid system which includes library search and rule-based interpretation methods together. The computer programs were written in Pascal Codes. The prototype IR library of silicon alloys includes amorphous silicon (a-Si), amorphous silicon dioxide (a-SiOx), amorphous silicon nitride (a-Si3N4) and amorphous silicon carbide (a-SiC) references. The known spectra of these compounds were fed into the system as an unknown samples. The performance of the developed program was evaluated on a test set of 157 spectra and the percentages of successful identification ranged between 78% and 99% for different alloys.

  5. New advancements in focused ion beam repair of alternating phase-shift masks

    NASA Astrophysics Data System (ADS)

    Lessing, Joshua; Robinson, Tod; Brannen, Rey A.; Morrison, Troy B.; Holtermann, Theresa

    2003-08-01

    As advanced photolithography extends the ability to print feature sizes below the 100 nm technology node, various reticle enhancement techniques (RET) are being employed to improve resolution. An example of RET is the alternating phase shift mask (APSM), which currently challenges the ability of conventional repair techniques to repair even the most basic reticle defect. The phase shifting quartz bump is one defect type critical to the performance of APSM technology masks. These defects on the APSM reticle are caused by imperfections in the resist image during processing, resulting in a localized under or over etch of the quartz substrate. The integrated application of gas assisted etch (GAE), focused ion beam (FIB) reticle repair, and atomic force microscopy (AFM), provide a comprehensive solution for advanced reticle defect repair and characterization. Ion beam repair offers superior accuracy and precision for removal without significant damage to the underlying or adjacent quartz. The AFM technique provides quantitative measurement of 3D structures, including those associated with alternating phase shifters etched into quartz as well as embedded shifters. In the work presented in this paper, quartz bum defects were pre-scanned on an AFM tool and proprietary software algorithms were used to generate defect image and height map files for transfer to the FIB reticle repair tool via a network connection. The FIB tool then used these files to control selectively the ion dose during the corresponding quartz defect repair. A 193 nm APSM phase shift photomask with programmed defects in 400 nm line and space pattern was repaired using an FEI Stylus NanoProfilometer (SNP) and a FEI Accura 850 focus ion beam (FIB) tool. Using the APSM FIB repair method, the transmittance evaluated from 193 nm AIMS at the repair area was more than 90% without post-processing.

  6. Advancements in focused ion beam repair of alternating phase-shift masks

    NASA Astrophysics Data System (ADS)

    Lessing, Joshua; Robinson, Tod; Morrision, Troy; Holtermann, Theresa

    2003-12-01

    As advanced photolithography extends the ability to print feature sizes below the 100 nm technology node, various reticle enhancement techniques (RET) are being employed to improve resolution. An example of RET is the alternating phase shift mask (APSM), which currently challenges the ability of conventional repair techniques to repair even the most basic reticle defect. The phase shifting quartz bump is one defect type critical to the performance of APSM technology masks. These defects on the APSM reticle are caused by imperfections in the resist image during processing, resulting in a localized under or over etch of the quartz substrate. The integrated application of gas assisted etch (GAE), focused ion beam (FIB) reticle repair, and atomic force microscopy (AFM), provides a comprehensive solution for advanced reticle defect repair and characterization. Ion beam repair offers superior accuracy and precision for removal without significant damage to the underlying or adjacent quartz. The AFM technique provides quantitative measurement of 3D structures, including those associated with alternating phase shifters etched into quartz as well as embedded shifters. In the work presented in this paper, quartz bump defects were pre-scanned on an AFM tool and proprietary software algorithms were used to generate defect image and height map files for transfer to the FIB reticle repair tool via a network connection. The FIB tool then used these files to selectively control the ion dose during the corresponding quartz defect repair. A 193 nm APSM phase shift photomask with programmed defects in 400 nm line and space pattern was repaired using an FEI Stylus NanoProfilometer (SNP) and a FEI Accura 850 focus ion beam (FIB) tool. Using the APSM FIB repair method, the transmittance evaluated from 193 nm AIMS at the repair area was more than 90% without post-processing.

  7. Ion beam processing of high-temperature solid-lubricating coatings

    SciTech Connect

    Bhattacharya, R.S.; Rai, A.K.; Yust, C.S.

    1993-07-01

    Ion bean assisted deposition (IBAD) and ion beam mixing (IBM) were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF{sub 2}/CaF{sub 2}/Ag composites. In IBAD, a low energy ({approximately}500 eV) Ar{sup +} bombardment was used in combinations with electron beam evaporation of coating materials. In ion beam mixing, magnetron sputter deposition was used to deposit a mixed composite coating of CaF{sub 2} + Ag which was subsequently ion beam mixed with 1 MeV Ag{sup +} at a fluence of 1 x 10{sup 16} cm{sup {minus}2}. The deposited coatings were characterized for composition and microstructure using Rutherford back-scattering spectrometry (RBS) and transmission electron microscopy (TEM). The friction and wear tests were carried out in a high-temperature controlled-atmosphere test system utilizing pin-on-disc wear test geometry. Uncoated Si{sub 3}N{sub 4} (NBD-100) spheres were used as the pin-on coated NBD-100 Si{sub 3}N{sub 4} and Rene 41 Ni-base superalloy discs. Both IBAD and sputtering of BaF{sub 2} and CaF{sub 2} resulted in a near stoichiometric composition with a very fine microstructure. Friction coefficients below 600{degrees}C were approximately 0.2-0.3 in the case of coated Rene 41 alloy, but were reduced to about 0.1-0.15 at 800{degrees}C for coated Si{sub 3}N{sub 4}. 13 refs., 15 figs., 2 tabs.

  8. Thermal stability of silicon nitride coatings produced by ion assisted deposition

    NASA Astrophysics Data System (ADS)

    Grabowski, K. S.; Kahn, A. D. F.; Donovan, E. P.; Carosella, C. A.

    1989-03-01

    Amorphous Si-N alloy films containing from about 20 to 60 at.% N were deposited by combined e-beam evaporation of Si and ion bombardment of N. A Kaufman-type ion gun produced the 500-eV nitrogen ion beam. Films up to 1-μm thick were deposited on single-crystals of silicon and sapphire in a vacuum of about 2 × 10 -4 Torr. The as-deposited films were characterized by Rutherford backscattering spectroscopy for composition, visible and near-infrared spectrophotometry to measure index of refraction and absorption bands from Si-N bond vibrations, and X-ray diffraction for crystal structure. Subsequently, samples were annealed in a thermogravimetric analyzer at temperatures up to 1350°C to ascertain their thermal stability against crystallization, oxidation, and reaction with the substrate. Postanneal examination by Rutherford backscattering, spectrophotometry. X-ray diffraction, and optical and scanning electron microscopy provided detailed information on the thermally induced changes in the films. Crystallization of Si occurred in N-poor samples, while αSi 3N 4 crystallized in N-rich samples after 1200°C anneals. Blisters sometimes also appeared following 1200°C anneals of N-rich samples. For anneals up to 1200°C, no reactions with sapphire or Si substrates were observed and minimal oxidation was found.

  9. Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching.

    PubMed

    Liu, Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Grigoras, Kestutis; Tittonen, Ilkka

    2013-05-03

    A novel aluminum oxide (Al2O3) hard mask fabrication process with nanoscale resolution is introduced. The Al2O3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al2O3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga(+)) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al2O3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga(+) FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al2O3 mask protects the underlying silicon from Ga(+) ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated.

  10. Fracture Tests of Etched Components Using a Focused Ion Beam Machine

    NASA Technical Reports Server (NTRS)

    Kuhn, Jonathan, L.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Orloff, Jon; Powers, Edward I. (Technical Monitor)

    2000-01-01

    Many optical MEMS device designs involve large arrays of thin (0.5 to 1 micron components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture test configurations for 0.5 micron thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe. and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

  11. Electrical biasing and voltage contrast imaging in a focused ion beam system

    SciTech Connect

    Campbell, A.N.; Soden, J.M.; Rife, J.L.; Lee, R.G.

    1995-09-01

    We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of their application to the failure analysis of complex ICs. We discuss the necessary changes in system operating parameters to perform biased voltage contrast imaging.

  12. Fracture tests of etched components using a focused ion beam machine

    NASA Astrophysics Data System (ADS)

    Kuhn, Jonathan L.; Fettig, Rainer K.; Moseley, Samuel H., Jr.; Kutyrev, Alexander S.; Orloff, Jon

    2000-08-01

    Many optical MEMS device designs involve large arrays of thin (0.5 to 1 (mu) m) components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture tests configurations for 0.5 (mu) m thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe, and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

  13. High energy focused ion beam technology and applications at the Louisiana Accelerator Center

    NASA Astrophysics Data System (ADS)

    Glass, G. A.; Dymnikov, A. D.; Rout, B.; Zachry, D. P.

    2007-07-01

    The high energy focused ion beam (HEFIB) system at the Louisiana Accelerator Center (LAC) of the University of Louisiana at Lafayette, Lafayette, USA, is constructed on one of the beamlines of a National Electrostatics Corporation 1.7 MV 5SDH-2 tandem accelerator. The HEFIB system has several components, including a versatile magnetic quadrupole sextuplet lens focusing system defined as the Russian magnetic sextuplet (RMS) system having the same demagnifications, the same focal lengths and the same positions of the focal points in xz and yz planes as the Russian quadruplet and a one-piece concrete supporting base and integrated endstation with air isolation. A review of recent microlithography and HEFIB system developments at LAC are presented, as well as new results using heavy ion (HI) beam lithography on crystalline silicon.

  14. Energetic ion beams in semiconductor processing: Summary of a DOE panel study

    SciTech Connect

    Picraux, S.T.; Cchason, E.; Poate, J.M.

    1995-12-31

    The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.

  15. Nanoindentation on carbon thin films obtained from a C 60 ion beam

    NASA Astrophysics Data System (ADS)

    Dall'Asén, A. G.; Verdier, M.; Huck, H.; Halac, E. B.; Reinoso, M.

    2006-09-01

    Raman spectra, atomic force microscope (AFM) images, hardness ( H) and Young's modulus ( E) measurements were carried out in order to characterize carbon thin films obtained from a C 60 ion beam on silicon substrates at different deposition energies (from 100 up to 500 eV). The mechanical properties were studied via the nanoindentation technique. It has been observed by Raman spectroscopy and AFM that the microstructure presents significant changes for films deposited at energies close to 300 eV. However, these remarkable changes have not been noticeable on the mechanical properties: apparently H and E increase with higher deposition energy up to ˜11 and ˜116 GPa, respectively. These values are underestimated if the influence of the film roughness is not taken into account.

  16. Optical studies of ion-beam synthesized metal alloy nanoparticles

    NASA Astrophysics Data System (ADS)

    Magudapathy, P.; Srivatsava, S. K.; Gangopadhyay, P.; Amirthapandian, S.; Sairam, T. N.; Panigrahi, B. K.

    2015-06-01

    AuxAg1-x alloy nanoparticles with tunable surface plasmon resonance (SPR) have been synthesized on a silica glass substrate. A small Au foil on an Ag foil is irradiated as target substrates such that ion beam falls on both Ag foil and Au foils. Silica slides are kept at an angle ˜45° with respect to the metallic foils. While irradiating the metallic foils with 100 keV Ar+ ions, sputtered Au and Ag atoms get deposited on the silica-glass. In this configuration the foils have been irradiated by Ar+ ions to various fluences at room temperature and the sputtered species are collected on silica slides. Formation of AuxAg1-x nanoparticles has been confirmed from the optical absorption measurements. With respect to the exposure area of Au and Ag foils to the ion beam, the SPR peak position varies from 450 to 500 nm. Green photoluminescence has been observed from these alloy metal nanoparticles.

  17. Progress report of the innovated KIST ion beam facility

    NASA Astrophysics Data System (ADS)

    Kim, Joonkon; Eliades, John A.; Yu, Byung-Yong; Lim, Weon Cheol; Chae, Keun Hwa; Song, Jonghan

    2017-01-01

    The Korea Institute of Science and Technology (KIST, Seoul, Republic of (S.) Korea) ion beam facility consists of three electrostatic accelerators: a 400 kV single ended ion implanter, a 2 MV tandem accelerator system and a 6 MV tandem accelerator system. The 400 kV and 6 MV systems were purchased from High Voltage Engineering Europa (HVEE, Netherlands) and commissioned in 2013, while the 2 MV system was purchased from National Electrostatics Corporation (NEC, USA) in 1995. These systems are used to provide traditional ion beam analysis (IBA), isotope ratio analysis (ex. accelerator mass spectrometry, AMS), and ion implantation/irradiation for domestic industrial and academic users. The main facility is the 6 MV HVEE Tandetron system that has an AMS line currently used for 10Be, 14C, 26Al, 36 Cl, 41Ca and 129I analyses, and three lines for IBA that are under construction. Here, these systems are introduced with their specifications and initial performance results.

  18. Simulation of ion beam injection and extraction in an EBIS.

    PubMed

    Zhao, L; Kim, J S

    2016-02-01

    An example simulation of Au+ charge breeding using FAR-TECH's integrated EBIS (electron beam ion source) modeling toolset is presented with the emphasis on ion beam injection and extraction. The trajectories of injected ions are calculated with PBGUNS (particle beam gun simulation) self-consistently by including the space charges from both ions and electrons. The ion beam, starting with initial conditions within the 100% acceptance of the electron beam, is then tracked by EBIS-PIC (particle-in-cell EBIS simulation code). In the trap, the evolution of the ion charge state distribution is estimated by charge state estimator. The extraction of charge bred ions is simulated with PBGUNS. The simulations of the ion injections show significant ion space charge effects on beam capture efficiency and the ionization efficiency.

  19. Diagnostics for ion beam driven high energy density physics experiments.

    PubMed

    Bieniosek, F M; Henestroza, E; Lidia, S; Ni, P A

    2010-10-01

    Intense beams of heavy ions are capable of heating volumetric samples of matter to high energy density. Experiments are performed on the resulting warm dense matter (WDM) at the NDCX-I ion beam accelerator. The 0.3 MeV, 30 mA K(+) beam from NDCX-I heats foil targets by combined longitudinal and transverse neutralized drift compression of the ion beam. Both the compressed and uncompressed parts of the NDCX-I beam heat targets. The exotic state of matter (WDM) in these experiments requires specialized diagnostic techniques. We have developed a target chamber and fielded target diagnostics including a fast multichannel optical pyrometer, optical streak camera, laser Doppler-shift interferometer (Velocity Interferometer System for Any Reflector), beam transmission diagnostics, and high-speed gated cameras. We also present plans and opportunities for diagnostic development and a new target chamber for NDCX-II.

  20. Characteristics of ultra-low-energy Cs + ion beam bombardments

    NASA Astrophysics Data System (ADS)

    Li, Zhanping; Hoshi, Takahiro; Oiwa, Retsu

    2003-01-01

    Shallow arsenic implants and extra-thin film (SiON) are routinely analyzed by modern SIMS under ultra-low-energy Cs + ion beam bombardment, either at oblique (<60°) or glancing (˜80°) incident angle [J. Surf. Anal. 6 (3) (1999) A-3; in: A. Benninghoven, et al. (Eds.), Proceedings of the SIMS XII, Elsevier, Amsterdam, 1999, p. 549]. This article investigates the basic aspects of ultra-low-energy Cs + ion beam bombardment using a delta-doped boron sample (four layers, 5.3 nm per cycle), such as useful yield, depth resolution and changes in sputter rate in the near surface region. Our results indicated that there is a magic incidence angle (˜70°) at which the depth resolution is very poor, and at glancing (˜80°) incident angle the best depth resolution is observed.