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Sample records for ion-beam assisted silicon

  1. Focused ion beam-assisted fabrication of soft high-aspect ratio silicon nanowire atomic force microscopy probes.

    PubMed

    Knittel, Peter; Hibst, Nicolas; Mizaikoff, Boris; Strehle, Steffen; Kranz, Christine

    2017-03-28

    In this study, high-aspect ratio silicon nanowire (SiNW) - modified atomic force microscopy (AFM) probes are fabricated using focused ion beam (FIB) microfabrication technology and vapor-solid-solid synthesis. Commercially available soft silicon nitride probes are used for localized nanowire growth yielding soft high-aspect ratio AFM probes. The SiNW-modified cantilevers are used here for imaging in PeakForce Tappingۛ (PFT) mode, which offers high force control along with valuable information about tip-sample adhesion. A platinum catalyst, deposited accurately at a truncated AFM tip by ion beam-induced deposition (IBID), was used for localized nanowire synthesis. It could be shown that the deposition of a thin silicon dioxide layer prior to the catalyst deposition resulted in controlled SiNW growth on silicon as well as silicon nitride probes. In addition, a FIB-based method for post-growth alignment of the fabricated SiNW tips is presented, which allows tilt-compensation specifically tailored to the specifications of the used AFM instrumentation. To demonstrate the capability of such soft, high-aspect ratio AFM probes, optical gratings fabricated in GaAs and silver halide fibers were imaged in PFT mode. Additionally, the mechanical stability of these high-aspect AFM probes was evaluated on a sapphire substrate.

  2. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    NASA Astrophysics Data System (ADS)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  3. Metal assisted focused-ion beam nanopatterning

    NASA Astrophysics Data System (ADS)

    Kannegulla, Akash; Cheng, Li-Jing

    2016-09-01

    Focused-ion beam milling is a versatile technique for maskless nanofabrication. However, the nonuniform ion beam profile and material redeposition tend to disfigure the surface morphology near the milling areas and degrade the fidelity of nanoscale pattern transfer, limiting the applicability of the technique. The ion-beam induced damage can deteriorate the performance of photonic devices and hinders the precision of template fabrication for nanoimprint lithography. To solve the issue, we present a metal assisted focused-ion beam (MAFIB) process in which a removable sacrificial aluminum layer is utilized to protect the working material. The new technique ensures smooth surfaces and fine milling edges; in addition, it permits direct formation of v-shaped grooves with tunable angles on dielectric substrates or metal films, silver for instance, which are rarely achieved by using traditional nanolithography followed by anisotropic etching processes. MAFIB was successfully demonstrated to directly create nanopatterns on different types of substrates with high fidelity and reproducibility. The technique provides the capability and flexibility necessary to fabricate nanophotonic devices and nanoimprint templates.

  4. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  5. Synthesis and characterization of ion beam assisted silver nanosystems in silicon based materials for enhanced photocurrent collection efficiency

    NASA Astrophysics Data System (ADS)

    Dhoubhadel, Mangal S.

    In recent years a great deal of interest has been focused on the synthesis of transitional metal (e.g. Ag, Cu, Fe, Au) nanosystems at the surface to sub-surface regions of Si and SiO2 matrices for fundamental understanding of their structures as well as for development of technological applications with enhanced electronic and optical properties. The applications of the metal nanoparticle or nanocluster (NC) systems range from plasmonics, photovoltaic devices, medical, and biosensors. In all of these applications; the size, shape and distribution of the metallic NCs in the silicon matrix play a key role. Low energy ion implantation followed by thermal annealing (in vacuum or gas environment) is one of the most suitable methods for synthesis of NCs at near surfaces to buried layers below the surfaces of the substrates. This technique can provide control over depth and concentration of the implanted ions in the host matrix. The implanted low energy metal ions initially amorphizes the Si substrates while being distributed at a shallow depth near the substrate surface. When subject to thermal annealing, the implanted ions agglomerate to form clusters of different sizes at different depths depending upon the fluence. However, for the heavier ions implanted with high fluences (˜1x10 16 - 1x1017 atoms/cm2), there lies challenges for accurately predicting the distribution of the implanted ions due to sputtering of the surface as well as redistribution of the implants within the host matrix. In this dissertation, we report the investigation of the saturation of the concentration of the implanted ion species in the depth profiles with low energies (< 80 keV) metal ions (Ag and Au) in Si (100), while studying the dynamic changes during the ion implantation. (Abstract shortened by ProQuest.).

  6. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  7. Dual ion beam assisted deposition of biaxially textured template layers

    DOEpatents

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  8. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  9. Ion-beam assisted, electron-beam physical vapor deposition

    SciTech Connect

    Singh, J.

    1996-12-01

    Electron beam-physical vapor deposition (EB-PVD) is a relatively new technology that has overcome some of the difficulties associated with chemical vapor deposition, physical vapor deposition, and thermal spray processes. In the EB-PVD process, focused high-energy electron beams generated from electron guns are directed to melt and evaporate ingots, as well as preheat the substrate inside a vacuum chamber. By adding the assistance of ion beams to the process, coating density and adhesion are improved, while costs are reduced. This article describes physical vapor deposition and ion-beam processes, explains the advantages of EB-PVD, shows how ion beams optimize the benefits of EB-PVD, and enumerates a variety of applications.

  10. Precise Fabrication of Silicon Wafers Using Gas Cluster Ion Beams

    SciTech Connect

    Isogai, Hiromichi; Toyoda, Eiji; Izunome, Koji; Kashima, Kazuhiko; Mashita, Takafumi; Toyoda, Noriaki; Yamada, Isao

    2009-03-10

    Precise surface processing of a silicon wafer was studied by using a gas cluster ion beam (GCIB). The damage caused to the silicon surface was strongly dependent on irradiation parameters. The extent of damage varied with the species of source gas and the acceleration voltage (Va) of cluster ions. It also varied with the cluster size and residual gas pressure. The influence of electron acceleration voltage (Ve) used for ionization of a neutral cluster was also investigated. The irradiation damage, such as an amorphous silicon (a-Si) layer, a mixed layer of a-Si and c-Si (transition layer), and surface roughness, was increased with Ve. It is suggested that the increase in the amount of energy per atom was induced by high Ve, because of variation of the cluster size and/or cluster charge. An undamaged smooth surface can be produced by Ar-GCIB irradiation at low Ve and Va.

  11. Integrated simulations for ion beam assisted fast ignition

    NASA Astrophysics Data System (ADS)

    Sakagami, H.; Johzaki, T.; Sunahara, A.; Nagatomo, H.

    2016-03-01

    Although the energy conversion efficiency from the heating laser to fast electrons is high, the coupling efficiency from fast electrons to the core is estimated to be very low due to large divergence angle of fast electrons in fast ignition experiments at ILE, Osaka University. To mitigate this problem, a plastic thin film or low-density foam, which can generate not only proton (H+) but also carbon (C6+) beams, is combined with currently used cone-guided targets and additional core heating by ions is expected. According to integrated simulations, it is found that these ion beams can enhance the core heating by 20∼60% and it shows a possibility of ion beam assisted fast ignition.

  12. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    NASA Astrophysics Data System (ADS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P. K.; Singkarat, S.; Yu, L. D.

    2012-07-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 1013 and 1 × 1014 ions/cm2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  13. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    DTIC Science & Technology

    2007-11-02

    Prepared For: Air Force Wright Aeronautical Lab(WRDC/MLBT), Wright-Patterson AFB,OH 45433 Descriptors, Keywords: ion beam film deposition MoS2 solid...NUMBERS Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films PE - 63224C, 61153N WU -2855, 3409 6. AUTHOR(S) Robert N. Bolster 7... MoS2 ) are effective as solid lubricants. Ion-beam-assisted deposition, which employs ion beam sputtering with an assist beam impinging on the growing

  14. Residual stress control by ion beam assisted deposition

    SciTech Connect

    Was, G.S.; Jones, J.W.; Parfitt, L.; Kalnas, C.E.; Goldiner, M.

    1996-12-31

    The origin of residual stresses were studied in both crystalline metallic films and amorphous oxide films made by ion beam assisted deposition (IBAD). Monolithic films of Al{sub 2}O{sub 3} were deposited during bombardment by Ne, Ar or Kr over a narrow range of energies, E, and a wide range of ion-to-atom arrival rate ratios, R and were characterized in terms of composition, thickness, density, crystallinity, microstructure and residual stress. The stress was a strong function of ion beam parameters and gas content and compares to the behavior of other amorphous compounds such as MoSi{sub x} and WSi{sub 2.2}. With increasing normalized energy (eV/atom), residual stress in crystalline metallic films (Mo, W) increases in the tensile direction before reversing and becoming compressive at high normalized energy. The origin of the stress is most likely due to densification or interstitial generation. Residual stress in amorphous films (Al{sub 2}O{sub 3}, MoSi{sub x} and WSi{sub 2.2}) is initially tensile and monotonically decreases into the compressive region with increasing normalized energy. The amorphous films also incorporate substantially more gas than crystalline films and in the case of Al{sub 2}O{sub 3} are characterized by a high density of voids. Stress due to gas pressure in existing voids explains neither the functional dependence on gas content nor the magnitude of the observed stress. A more likely explanation for the behavior of stress is gas incorporation into the matrix, where the amount of incorporated gas is controlled by trapping.

  15. Diffusion barriers for silicon carbide particle reinforcements by ion-beam assisted deposition: Effects on interphase stability in silicon carbide(p/beta)-nickel aluminide and silicon carbide(p/gamma)-nickel aluminide composites

    NASA Astrophysics Data System (ADS)

    Cai, Zhiwei

    In this study, aluminum nitride and aluminum oxide films were used as diffusion barriers for SiC particles that were consolidated with beta-NiAl and gamma-Ni3Al matrices at temperatures of 1673 K and 1373 K, respectively. The focus of this study was to understand factors influencing the effectiveness of the diffusion barriers during the consolidation processes of the two composite systems. The barrier films were deposited on SiC particles by ion-beam assisted vacuum evaporation during which the SiC particles were radiantly heated and acoustically levitated. The nitride film formed reactively on SiC particles, and consisted of 95% aluminum nitride (balanced with aluminum nitrate and oxide). The oxygen content in the nitride film was a result of the impingement of residual oxygen and water molecules in the deposition environment. A voided globular structure of fine-grained clusters was found in a nitride film deposited on SiC particles at 593 K, which was attributed to the levitation of the particles and the deposition temperature. Nitride films deposited at a higher temperature of 793 K consisted of a fine-grained dense structure with few voids. The oxide film deposited at room temperature had a fine-grained dense structure with some globular features. This study found that film material affected film's ability of retaining integrity during compositing process, which was important for the success of the barrier films. Annealed at 1673 K, grains in a nitride film (deposited at 793 K) coalesced to an average size of 0.5 mum that was comparable to the film thickness. Grain boundaries in the film were widened by the pore agglomeration, resulting in micro-cracks. The oxide film exhibited a similar phenomenon of uninhibited grain growth and micro-crack formation at a lower temperature of 1273 K. Both films failed to be an effective barrier in SiC/beta-NiAl composite during the compositing process at 1673 K. This study showed the influence of film structure on grain growth

  16. Ion Beam Synthesis Of Metal - Silicon Carbide - Si Multilayer Structures

    NASA Astrophysics Data System (ADS)

    Lindner, J. K. N.; Tsang, W. M.; Stritzker, B.; Wong, S. P.

    2003-08-01

    High doses of Ti, Ni, Mo, or W ions were implanted at elevated temperatures either conventionally or using a MEVVA ion source into ion beam synthesized Si/SiC/Si or SiC/Si layer structures in order to create metallic layers contacting the SiC. The depth distribution of metal atoms and the formation of silicide and carbide phases as well as the formation of cavities at the lower SiC/Si interface are studied by Rutherford backscattering spectroscopy (RBS) and cross-sectional transmission electron microscopy (XTEM). A brief survey of the effects ocurring in the ion beam metallization of SiC films is given and the benefit of using ion beams for metallization of thin films is elucidated.

  17. Low energy ion beam assisted growth of metal multilayers

    NASA Astrophysics Data System (ADS)

    Quan, Junjie

    energy, ion species, ion fluence, and ion incidence angle has been investigated during low energy ion assisted vapor deposition of Cu/Co mutilayers. Key mechanisms of atomic reconstruction in the low energy regime have been identified and investigated in detail using a molecular statics method. By changing the ion energy or modifying the time lag between metal and ion deposition, these simulations identified three different approaches for controlling the atomic assembly of multilayer: (i) simultaneous, (ii) modulated energy and (iii) sequential ion assistance. Each has been shown capable of enabling significant interfacial structure control during the growth of metallic multilayers. A biased target ion beam deposition (BTIBD) system was designed and constructed to provide growth environments similar to those that resulted in the best simulated film structures. The BTIBD system has been successfully employed to deposit a variety of multilayers. Experimental investigations of low energy ion assisted growth of a representative spin valve (Ta/NiFe/Co/Cu/Co/FeMn/Cu) multilayer and a model Ta/Cu film indicate significantly improved interfacial structures when oblique, low energy, argon ion assistance was used. These results are fully consistent with the simulations and confirm that a BTIBD approach to multilayer deposition results in substantially improved films compared to those synthesized by traditional ion beam assisted deposition approaches where less effective control of atomic self assembly is possible.

  18. Ion-Beam Milling of Silicon Carbide Epitaxial Layers.

    DTIC Science & Technology

    1982-08-04

    Ion milling of photolithographically processed silicon carbide heteroepitaxially grown layers on Si is feasible using an aluminum mask which is produced by standard photolithographic procedures and techniques. (Author)

  19. Ion-beam induced atomic mixing in isotopically controlled silicon multilayers

    NASA Astrophysics Data System (ADS)

    Radek, M.; Bracht, H.; Liedke, B.; Böttger, R.; Posselt, M.

    2016-11-01

    Implantation of germanium (Ge), gallium (Ga), and arsenic (As) into crystalline and preamorphized isotopically controlled silicon (Si) multilayer structures at temperatures between 153 K and 973 K was performed to study the mechanisms mediating ion-beam induced atomic mixing. Secondary-ion-mass-spectrometry was applied to determine concentration-depth profiles of the stable isotopes before and after ion implantation. The intermixing is analytically described by a depth-dependent displacement function. The maximum displacement is found to depend not only on temperature and microstructure but also on the doping type of the implanted ion. Molecular dynamics calculations evaluate the contribution of cascade mixing, i.e., thermal-spike mixing, to the overall observed atomic mixing. Calculated and experimental results on the temperature dependence of ion-beam mixing in the amorphous and crystalline structures provide strong evidence for ion-beam induced enhanced crystallization and enhanced self-diffusion, respectively. On the other hand, the former process is confirmed by channeling Rutherford backscattering analyses of the amorphous layer thickness remaining after implantation, the latter process is consistently attributed to the formation of highly mobile Si di-interstitials formed under irradiation and in the course of damage annealing. The observed ion-beam mixing in Si is compared to recent results on ion-beam mixing of Ge isotope multilayers that, in contrast to Si, are fully described by thermal-spike mixing only.

  20. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    SciTech Connect

    Wang, Dandan Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  1. Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films

    DTIC Science & Technology

    1992-09-11

    Naval Research Laboratory AD-A255 222 Dunon C 203MU32 tID~li ___ NR1JMR6176-02-nM3 Ion-Beam-Assisted Deposition of MoS2 and Other Low-Friction Films...unlimited.J 13. ABSTRACT (fxMmrn, 200 iw~tds Vacuum-deposited films of molybdenum disulfide ( MoS2 ) ame effective as solid lubricants. Ion-beam...optimized and the assist beamn ion flux was quantified and found to follow a power-law relationship with beam power. The beat way to produce MoS2 films was

  2. Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

    NASA Astrophysics Data System (ADS)

    Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Yamamoto, Hideki; Kumakura, Kazuhide

    2017-03-01

    Cubic boron nitride (c-BN) films were grown on diamond (001) substrates by a new ion-beam-assisted molecular-beam-epitaxy (MBE) method with the irradiation of Ar+ ions and atomic nitrogen radicals (N*). From X-ray diffraction and cross-sectional transmission electron microscopy images, we confirmed the heteroepitaxial growth of single-domain c-BN(001) films on the diamond (001) substrates. Additionally, we revealed the growth phase diagram of BN films in the ion-beam-assisted MBE. This diagram indicates that the flux intensity of Ar+ ions should be higher than that of boron atoms for epitaxial c-BN growth.

  3. Method for forming metallic silicide films on silicon substrates by ion beam deposition

    DOEpatents

    Zuhr, Raymond A.; Holland, Orin W.

    1990-01-01

    Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

  4. Ion beam induced charge characterisation of a silicon microdosimeter using a heavy ion microprobe

    NASA Astrophysics Data System (ADS)

    Cornelius, Iwan; Siegele, Rainer; Rosenfeld, Anatoly B.; Cohen, David D.

    2002-05-01

    An ion beam induced charge (IBIC) facility has been added to the existing capabilities of the ANSTO heavy ion microprobe and the results of the first measurements are presented. Silicon on insulator (SOI) diode arrays with microscopic junction sizes have recently been proposed as microdosimeters for hadron therapy. A 20 MeV carbon beam was used to perform IBIC imaging of a 10 μm thick SOI device.

  5. Optimization of ultrafast laser generated low-energy ion beams from silicon targets

    SciTech Connect

    Stoian, R.; Mermillod-Blondin, A.; Bulgakova, N.M.; Rosenfeld, A.; Hertel, I.V.; Spyridaki, M.; Koudoumas, E.; Tzanetakis, P.; Fotakis, C.

    2005-09-19

    We demonstrate the possibility to manipulate the kinetic properties of ion beams generated by ultrafast laser ablation of silicon. The versatility in regulating the sub-keV ion flux is achieved by implementing adaptive control of the temporal shape of incident laser pulses. Tunable characteristics for the charged beams are obtained using excitation synchronized with the phase-transformation dynamics, exploiting transitions to volatile fluid states with minimal energetic expenses.

  6. Iodine enhanced focused-ion-beam etching of silicon for photonic applications

    SciTech Connect

    Schrauwen, Jonathan; Thourhout, Dries van; Baets, Roel

    2007-11-15

    Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices impractical when the optical mode is confined near the etched region. These losses are shown to be reduced by the local implantation and etching of silicon waveguides with iodine gas enhancement, followed by baking at 300 deg. C. The excess optical loss in the silicon waveguides drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after baking at 300 deg. C. We present elemental and chemical surface analyses supporting that this is caused by the desorption of iodine from the silicon surface. Finally we present a model to extract the absorption coefficient from the measurements.

  7. Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques

    SciTech Connect

    Friedrich, F. Herfurth, N.; Teodoreanu, A.-M.; Boit, C.

    2014-06-16

    Micron-sized, periodic crystalline Silicon columns on glass substrate were electrically contacted with a transparent conductive oxide front contact and a focused ion beam processed local back contact. Individual column contacts as well as arrays of >100 contacted columns were processed. Current-voltage characteristics of the devices were determined. By comparison with characteristics obtained from adapted device simulation, the absorber defect density was reconstructed. The contacting scheme allows the fabrication of testing devices in order to evaluate the electronic potential of promising semiconductor microstructures.

  8. Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

    NASA Astrophysics Data System (ADS)

    Ahmad, Z.; Ahmad, M.; Al-Hawat, Sh.; Akel, M.

    2017-04-01

    Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

  9. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    NASA Astrophysics Data System (ADS)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90–210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  10. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography.

    PubMed

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-24

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga(+) ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  11. Self-organized microstructures induced by MeV ion beam on silicon surface

    NASA Astrophysics Data System (ADS)

    Ahmad, Muthanna

    2017-02-01

    Micro patterning of self organized structure on silicon surface is induced by ion implantation of energetic (MeV) copper ions. This work reports for the first time the ability of using energetic ions for producing highly ordered ripples and dots of micro sizes. The experiments are realized at the Tandem ion beam accelerator (3 MV) at the IBA laboratory of the Atomic Energy Commission of Syria. Similarly to nano patterning formed by slow ions, the formation of micro patterned structures dots and ripples is observed to be depending on the angle of ion beam incidence, energy and ion fluence. The observation of such microstructures formation is limited to a range of ion energies (few MeV) at fluence higher than 1.75 × 1017 ion cm‑2. The patterned surface layer is completely amorphousized by the ion implantation. Shadowing effect is observed in the formation of microripples and superstructures in the top of ripples. The superstructure develops new morphology that is not observed before. This morphology has butterfly shape with symmetry in its structure.

  12. Fabrication of Superconducting Mo/Cu Bilayers Using Ion-Beam-Assisted e-Beam Evaporation

    NASA Astrophysics Data System (ADS)

    Jaeckel, Felix T.; Kripps, Kari L.; Morgan, Kelsey M.; Zhang, Shuo; McCammon, Dan

    2016-08-01

    Superconducting/normal metal bilayers with tunable transition temperature are a critical ingredient to the fabrication of high-performance transition edge sensors. Popular material choices include Mo/Au and Mo/Cu, which exhibit good environmental stability and provide low resistivity films to achieve adequate thermal conductivity. The deposition of high-quality Mo films requires sufficient adatom mobility, which can be provided by energetic ions in sputter deposition or by heating the substrate in an e-beam evaporation process. The bilayer T_c depends sensitively on the exact deposition conditions of the Mo layer and the superconducting/normal metal interface. Because the individual contributions (strain, crystalline structure, contamination) are difficult to disentangle and control, reproducibility remains a challenge. Recently, we have demonstrated that low-energy ion-beam-assisted e-beam evaporation offers an alternative route to reliably produce high-quality Mo films without the use of substrate heating. The energy and momentum delivered by the ion beam provides an additional control knob to tune film properties such as resistivity and stress. In this report we describe modifications made to the commercial end-Hall ion source to avoid iron contamination allowing us to produce superconducting Mo films. We show that the ion beam is effective at enhancing the bilayer interface transparency and that bilayers can be further tuned towards reduced T_c and higher conductivity by vacuum annealing.

  13. Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

    DOE PAGES

    Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward; ...

    2015-12-01

    In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

  14. Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

    SciTech Connect

    Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward; Vizkelethy, Gyorgy; Abraham, John B. S.; Doyle, Barney L.

    2015-12-01

    In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

  15. Silicon ion irradiation effects on the magnetic properties of ion beam synthesized CoPt phase

    SciTech Connect

    Balaji, S.; Amirthapandian, S.; Panigrahi, B. K.; Mangamma, G.; Kalavathi, S.; Gupta, Ajay; Nair, K. G. M.

    2012-06-05

    Ion beam mixing of Pt/Co bilayers using self ion (Pt{sup +}) beam results in formation of CoPt phase. Upon ion beam annealing the ion mixed samples using 4 MeV Si{sup +} ions at 300 deg. C, diffusion of Co towards the Pt/Co interface is observed. The Si{sup +} ion beam rotates the magnetization of the CoPt phase from in plane to out of plane of the film.

  16. Ion-beam sputtered amorphous silicon films for cryogenic precision measurement systems

    NASA Astrophysics Data System (ADS)

    Murray, Peter G.; Martin, Iain W.; Craig, Kieran; Hough, James; Robie, Raymond; Rowan, Sheila; Abernathy, Matt R.; Pershing, Teal; Penn, Steven

    2015-09-01

    Thermal noise resulting from the mechanical loss of multilayer dielectric coatings is expected to impose a limit to the sensitivities of precision measurement systems used in fundamental and applied science. In the case of gravitational wave astronomy, future interferometric gravitational wave detectors are likely to operate at cryogenic temperatures to reduce such thermal noise and ameliorate thermal loading effects, with the desirable thermomechanical properties of silicon making it an attractive mirror substrate choice for this purpose. For use in such a precision instrument, appropriate coatings of low thermal noise are essential. Amorphous silicon (a -Si ) deposited by e-beam and other techniques has been shown to have low mechanical loss. However, to date, the levels of mechanical and optical loss for a -Si when deposited by ion-beam sputtering (the technique required to produce amorphous mirrors of the specification for gravitational wave detector mirrors) are unknown. In this paper results from measurements of the mechanical loss of a series of IBS a -Si films are presented which show that reductions are possible in coating thermal noise of a factor of 1.5 at 120 K and 2.1 at 20 K over the current best IBS coatings (alternating stacks of silica and titania-doped tantala), with further reductions feasible under appropriate heat treatments.

  17. ALLIGATOR - An apparatus for ion beam assisted deposition with a broad-beam ion source

    NASA Astrophysics Data System (ADS)

    Wituschek, H.; Barth, M.; Ensinger, W.; Frech, G.; Rück, D. M.; Leible, K. D.; Wolf, G. K.

    1992-04-01

    Ion beam assisted deposition is a versatile technique for preparing thin films and coatings for various applications. Up to now a prototype setup for research purposes has been used in our laboratory. Processing of industrial standard workpieces requires a high current ion source with broad beam and high uniformity for homogeneous bombardment. In this contribution a new apparatus for large area samples will be described. It is named ALLIGATOR (German acronym of facility for ion assisted evaporation on transverse movable or rotary targets). In order to have a wide energy range available two ion sources are used. One delivers a beam energy up to 1.3 keV. The other is suitable for energies from 5 keV up to 40 keV. The ``high-energy'' ion source is a multicusp multiaperture source with 180-mA total current and a beam diameter of 280 mm at the target position.

  18. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  19. Two-dimensional silicon-based detectors for ion beam therapy

    NASA Astrophysics Data System (ADS)

    Martišíková, M.; Granja, C.; Jakůbek, J.; Hartmann, B.; Telsemeyer, J.; Huber, L.; Brons, S.; Pospíšil, S.; Jäkel, O.

    2012-02-01

    Radiation therapy with ion beams is a highly precise kind of cancer treatment. As ion beams traverse material, the highest ionization density occurs at the end of their path. Due to this Bragg-peak, ion beams enable higher dose conformation to the tumor and increased sparing of the surrounding tissue, in comparison to standard radiation therapy using high energy photons. Ions heavier than protons offer in addition increased biological effectiveness and lower scattering. The Heidelberg Ion Beam Therapy Center (HIT) is a state-of-the-art ion beam therapy facility and the first hospital-based facility in Europe. It provides proton and carbon ion treatments. A synchrotron is used for ion acceleration. For dose delivery to the patient, narrow pencil-like beams are scanned over the target volume.

  20. Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon

    SciTech Connect

    Beardmore, K.M.; Gronbech-Jensen, N.

    1999-05-02

    Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon to high dose ion-irradiation. The authors employ a realistic model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. The authors find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, the authors observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. The authors note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between the different densities of the amorphous samples. For any reasonable deformation rate, the authors observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in a denser structure relative to crystalline Si. The authors conclude that although there is substantial agreement between experimental measurements and simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally the authors show that annealing simulations of their amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in a-Si are analogous to those in c-Si.

  1. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Qiang, You; Jiang, Weilin; Burks, Edward C.; Liu, Kai; Namavar, Fereydoon; McCloy, John S.

    2014-11-07

    Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples contain grains ∼6 nm, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field.

  2. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Jiang, Weilin; Qiang, You; Burks, Edward; Liu, Kai; Namavar, Fereydoon; Mccloy, John S.

    2014-11-03

    Iron oxide films were deposited onto Si substrates using ion-beam-assisted deposition. The films were ~300 nm thick polycrystalline magnetite with an average crystallite size of ~6 nm. Additionally, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite. However, Raman spectroscopy and x-ray diffraction both indicate that the films are single-phase magnetite. Since no direct evidence of a second phase could be found, exchange bias likely arises due to defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples have such small grains, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field. The high energy deposition process results in an oxygen-rich, argon-containing magnetite film with low temperature exchange bias due to defects at the high concentration of grain boundaries.

  3. Influence of metal co-deposition on silicon nanodot patterning dynamics during ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Gago, R.; Redondo-Cubero, A.; Palomares, F. J.; Vázquez, L.

    2014-10-01

    We address the impact of metal co-deposition in the nanodot patterning dynamics of Si(100) surfaces under normal-incidence 1 keV Ar+ ion-beam sputtering (IBS). In particular, the effect of both the metal nature (Fe or Mo) and flux has been studied. Morphological and compositional evolution were followed by atomic force microscopy (AFM) and Rutherford backscattering spectrometry, respectively. For the same type of impurity, the dynamics is faster for a higher co-deposition flux, which also drives to larger asymptotic roughness and wavelength. Mo co-deposition yields rougher surfaces for a lower metal coverage than Fe and, remarkably, higher ordered patterns. X-ray photoelectron spectroscopy reveals the formation of silicide bonds even before pattern onset, stressing the relevant role of the affinity of the co-deposited metals for silicon. Further, current-sensing AFM performed at the initial and asymptotic stages indicates that the nanodot structures are metal-rich, resulting in coupled compositional and morphological patterns. These results are discussed in terms of phase segregation, morphology-driven local flux variations of impurities and silicide formation. This analysis reveals that the underlying (concurrent) mechanisms of pattern formation are complex since many processes can come into play with a different relative weight depending on the specific patterning conditions. From a practical point of view, it is shown that, by proper selection of the process parameters, IBS with metal co-deposition can be used to tune the dynamics and pattern properties and, interestingly, to produce highly ordered arrays.

  4. Ion beam assisted deposition of MgO barriers for magnetic tunnel junctions

    SciTech Connect

    Cardoso, S.; Macedo, R. J.; Ferreira, R.; Augusto, A.; Wisniowski, P.; Freitas, P. P.

    2008-04-01

    This work reports for the first time results on MgO tunnel junctions prepared by ion beam. The MgO barrier was deposited from a ceramic MgO target using an assisted beam, following the deposition and assisted beam phase diagram which relate the beam profile with the current and energy. The deposition rate for MgO is calculated with and without assisted beam, and compared with the experimental values. The MgO film growth on Ta/CoFeB/MgO simple stacks was optimized aiming at a (002) preferred orientation for the MgO growth, measured by x-ray diffraction. The optimum assist beam energy was tuned for each deposition beam condition (+800,+1000,+1200 V), using assist beams of 40 mA ({approx}130 {mu}A/cm{sup 2}) with 0 to +600 V. Without assist beam, no texture is observed for the MgO, while the (002) orientation appears for assisted deposition. The optimum range of assist voltages is large, being limited by the onset of etching at high voltages, reducing the deposition rate. Magnetic tunnel junctions were deposited with the structure Ta 50 A/Ru 200 A/Ta 50 A/Mn{sub 78}Ir{sub 22} 150 A/Co{sub 90}Fe{sub 10} 30 A/Ru 8 A/Co{sub 56}Fe{sub 24}B{sub 20} 40 A/MgO t/Co{sub 56}Fe{sub 24}B{sub 20} 30 A/Ru 30 A/Ta 50 A, with the MgO barrier deposited with the conditions optimized by x rays. The effect of the assist beam energy on the junction properties (magnetoresistance and magnetization) are discussed. Tunnel magnetoresistance values up to 110%, with RA products of 100-400 {omega} {mu}m{sup 2}, for 11 A thick MgO barriers are obtained using assisted deposition with a +100 V assist beam, which is a major improvement of the {approx}30% of TMR, if no beam is used.

  5. Mechanisms for Orientation in Low Energy Ion Beam Assisted TiAlN Thin Film Growth

    NASA Astrophysics Data System (ADS)

    Aliotta, Paul V.

    The effects of off-normal ionized vapor bombardment on the orientation and structure of off-normal sputter deposited TiAlN thin films has been investigated with the goal of better understanding the mechanistic pathways in ion beam assisted thin film growth for better control of film properties during deposition. The effects of incident angle for ion bombardment has been investigated as a potential variable during deposition and a comprehensive comparison to current theories of thin film orientation development has been made. It is shown that for low levels of ion energies and rates, films develop (220) orientation with a near amorphous zone 1 (Z1) morphology for low ion incident angles. As the rates and energies of ions increases, (111) orientation and fibrous transition zone (ZT) morphology develops. It is also seen that as the angle of ion bombardment increases the threshold level for rates and energies of ions to cause (111) orientation and ZT morphologies is reduced. This change in orientation and morphology has been shown to change in-situ according to the level of ion bombardment making this transition a potential tool for developing microstructures within thin films. Commonly accepted theories of thin film orientation have been investigated with respect to the development of (111) orientation for low energy ion beam assisted deposition including surface energy reduction, thermal influences, strain energy reduction, ion channeling, and ion damage anisotropy though such mechanisms were not successful in describing the development of (111) orientation. Atomic subplantation, generally regarded as a mechanism for bond formation in diamond-like carbon films, has also been investigated as a potential mechanism for orientation development. By treating the interaction of ions with the depositing film as a collision between ion and surface atom, the transition from (220) to (111) orientation is found to occur when the average energy transferred per atom normal to the

  6. Raman and photoluminescence study of ion beam irradiated porous silicon: a case for the astrophysical extended red emission?

    NASA Astrophysics Data System (ADS)

    Baratta, G. A.; Strazzulla, G.; Compagnini, G.; Longo, P.

    2004-03-01

    We have measured photoluminescence (PL) and Raman spectra of porous silicon (PS) thin films subjected to irradiation with 30 keV He+ ion beams. Fluence has been changed between 1014 and 1016 ions/cm2. The results show a decrease of the photoluminescence intensity by increasing the ion fluence, probably due to the formation of induced non-radiative recombination centres. The increase of defects density and the partial amorphization of the samples have been studied through Raman spectroscopy and a comparison with the induced damage in single-crystalline silicon has been considered. The characteristic PL wavelength (600-800 nm) supports the hypothesis that silicon nanostructures are an attractive carrier for the so called "Extended Red Emission" (ERE) observed in many astronomical objects. However, the possibility to tune the PL quantum efficiency by ion irradiation indicates that silicon nanostructures in space could loss their photoluminescence capability in those environments where cosmic ion bombardment plays a relevant role.

  7. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    SciTech Connect

    Wang, Andrew; Butte, Manish J.

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  8. Low-temperature (< 100 C) growth of AlN by ion beam assisted deposition

    SciTech Connect

    Karimy, H.; Tobin, E.; Bricault, R.; Cremins-Costa, A.; Colter, P.; Namavar, F.; Perry, D.

    1996-12-31

    During the past few years, there has been growing interest in aluminum nitride (AlN) thin films because of their excellent optical, electrical, chemical, mechanical and high-temperature properties. Ion beam assisted deposition (IBAD) was used to deposit AlN films on flat and curved substrates, including Si, SIMOX, sapphire, quartz, aluminum, stainless steel, and carbon, at temperatures substantially below 100 C. The objective as to enhance the physical and mechanical properties of AlN film by controlling the crystal size and structures. Experimental results, as obtained by Rutherford backscattering spectroscopy (RBS) show the formation of stoichiometric AlN. Plan-view/cross-sectional transmission electron microscopy (TEM), clearly demonstrated the formation of a smooth, uniform AlN film. Electron diffraction and dark field TEM studies clearly show the growth of AlN crystallites with cubic and/or hexagonal structures and dimensions of 30 to 100 {angstrom}. The films are transparent and have good adhesion to all substrates. In addition to excellent high temperature (up to 1,050 C measured) and chemical stability (shown through a variety of acid tests), these films have demonstrated extreme hardness, greater than two times that of bulk AlN.

  9. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    PubMed Central

    Wang, Andrew; Butte, Manish J.

    2014-01-01

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished. PMID:25161320

  10. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  11. Physical properties of nitrogenated amorphous carbon films produced by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Rossi, Francois; Andre, Bernard; Veen, A. Van; Mijnarends, P. E.; Schut, H.; Labohm, F.; Delplancke, Marie Paule; Dunlop, Hugh; Anger, Eric

    1994-12-01

    Carbon films with up to 32 at.% N (a-C:N) have been prepared using an ion-beam-assisted magnetron, with an N2(+) beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. Electron energy loss spectroscopy shows that these a-C:N films are mostly graphitic with up to 20% C Sp3 bonding. Rutherford backscattering spectroscopy and neutron depth profiling show that the density goes through a maximum as the average deposited energy per unit depth increases. X-ray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon in triple (C(triple bond)N and double (C=N) bonds. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with deposited energy. These results are consistent with a densification induced by the collisions at low deposited energy, and damage-induced graphitization at high deposited energy values.

  12. An ion-beam-assisted process for high-T{sub c} Josephson junctions

    SciTech Connect

    Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

    1997-10-01

    We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T{sub c}) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I{endash}V characteristics. The well-defined Shapiro steps have been seen on the I{endash}V curves under microwave radiation. The magnetic modulation of critical current of a 4 {mu}m width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 {mu}V at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0{times}10{sup {minus}4}G. {copyright} {ital 1997 American Institute of Physics.}

  13. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

    DOE PAGES

    Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; ...

    2016-10-04

    Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assistedmore » and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.« less

  14. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    SciTech Connect

    Krause, Matthias; Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas; Oates, Thomas W. H.; Luis Endrino, Jose

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  15. Ion-beam-assisted deposition of metal nanocluster thin films with nonlinear optical properties

    SciTech Connect

    Cotell, C.M.; Carosella, C.A.; Flom, S.R.; Schiestel, S.; Haralampus, N.; Barnett, T.W.; Bartoli, F.J.

    1996-12-31

    Metal nanocluster thin films ({approximately} 200 nm thickness) consisting of noble metal (Au) clusters (5--30 nm) in an active metal oxide (Nb{sub 2}O{sub 5}) matrix were deposited by evaporation or ion beam assisted deposition (IBAD). In some cases the films were given a post-deposition anneal. The microstructure of the films was examined by plan view and cross sectional transmission electron microscopy (TEM). The size of the metal nanoclusters was found to depend upon the temperature of the post-deposition anneal as well as the conditions of ion bombardment. Ion bombardment was found to stabilize smaller size particles. The linear optical properties of the films, as measured by VIS/UV spectroscopy, show particle size-dependent surface plasmon resonance effects. The nonlinear optical (NLO) properties of the nanoclusters in oxidized niobium were probed experimentally using degenerate four wave mixing (DFWM) and nonlinear transmission (NLT). The DFWM measurements yielded signals that showed strong evidence of saturation and give large values of {vert_bar}{chi}{sup (3)}{sub xxxx}{vert_bar}. NLT measurements demonstrated that the nonlinear absorption coefficient and, hence, I{sub m}{chi}{sup (3)}{sub xxxx} was negative. Time resolved DFWM measurements exhibited dynamics that decayed on a several picosecond time scale. The magnitude and the picosecond dynamics of the NLO response were compared to those observed in gold nanoclusters formed by ion implantation in other media. The advantages of the IBAD method for fabricating third order NLO films include the ability to deposit films of arbitrary active region thickness and, more importantly, high cluster densities.

  16. Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Burat, O.; Bouchier, D.; Stambouli, V.; Gautherin, G.

    1990-09-01

    We have studied boron nitride films deposited at room temperature by ion-beam-assisted deposition in an ultrahigh vacuum apparatus, with ion accelerating voltages ranging between 0.25 and 2 kV. By using complementarily in situ Auger electron spectrometry and ex situ nuclear analyses to determine the respective surface and bulk N concentrations in the deposited films, we were able to identify the different phases of the mechanism leading to the nitridation of evaporated boron by nitrogen ions. For low nitrogen/boron flux ratios, the incorporation of nitrogen seems to be only governed by ion implantation, and, with respect to the depth of the deposit, the surface is found largely depleted in nitrogen, while the N-incorporation yield remains close to one whatever the ion energy. Such a behavior is well verified as long as a critical bulk nitrogen concentration close to 5.5×1022 cm-3 has not been achieved. For concentrations greater than this, superstoichiometric material is obtained up to a saturation which corresponds to a bulk N incorporation ranging from 6 to 7×1022 cm-3. Further increase of the N/B flux ratio induces a strong diffusion process from N-rich bulk to N-depleted surface, which results in the nitridation of surface boron atoms and a loss of nitrogen by sputtering or desorption. The density measurements seem to indicate that the synthesized phase is close to h-BN. However, the density of B-rich layers ([N]/[B]≊0.2-0.3) is found to be very close to that calculated for a mixture of pure boron and c-BN. The transparency and microhardness of the synthesized BN have satisfying values for its application as a wear-resistant optical coating, but it is not c-BN.

  17. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Mao, Shoudong; Yang, Hengxiu; Li, Jinlong; Huang, Feng; Song, Zhenlun

    2011-04-01

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar+ ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar+ ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  18. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    SciTech Connect

    Margarone, D.; Prokupek, J.; Rus, B.; Krasa, J.; Velyhan, A.; Laska, L.; Giuffrida, L.; Torrisi, L.; Picciotto, A.; Nowak, T.; Musumeci, P.; Mocek, T.; Ullschmied, J.

    2011-05-15

    Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

  19. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    NASA Astrophysics Data System (ADS)

    Margarone, D.; Krása, J.; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, A.; Prokůpek, J.; Láska, L.; Mocek, T.; Ullschmied, J.; Rus, B.

    2011-05-01

    Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

  20. A DLTS study of defects formed in silicon during ion beam mixing

    NASA Astrophysics Data System (ADS)

    Auret, F. D.; Malherbe, J. B.; Nel, M.; Myburg, G.

    1988-12-01

    Ion beam mixing in Schottky barrier diodes (SBDs), achieved by implanting ions through the metal gate of the SBD, has been shown to cause substantial changes in its electrical properties. During the implantation structural damage is caused, both in the metal gate and in the Si substrate. In the latter this damage gives rise to electrically active defects. We report here on these defects caused by implanting 100 keV Si + ions through 400 Å thick Ni Schottky barrier diodes on n- and p-Si with doses ranging between 10 12 and 10 16 cm -2. The results obtained using deep level transient spectroscopy (DLTS) showed the presence of several implantation-induced defects. For some of them the DLTS "signatures" correspond to those of defects caused by high energy (1 Mev) electron irradiation. Further, IV and CV measurements in conjunction with isochronal annealing revealed a definite trend between the properties of the Schottky barrier diodes and the deep level defects caused by ion beam mixing.

  1. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    SciTech Connect

    Alexandrov, P. A. Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

    2013-02-15

    Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

  2. Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si

    PubMed Central

    2011-01-01

    Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding. PMID:21711934

  3. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    NASA Astrophysics Data System (ADS)

    Ozcan, Ahmet S.; Lavoie, Christian; Alptekin, Emre; Jordan-Sweet, Jean; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-04-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  4. Interface-state-controlled segregation of gold during ion-beam-induced epitaxy of amorphous silicon

    SciTech Connect

    Custer, J.S.; Thompson, M.O. ); Jacobson, D.C.; Poate, J.M. )

    1991-10-15

    Segregation coefficients and velocity enhancements for Au in amorphous Si during ion-beam-induced epitaxial crystallization were measured. At 320 {degree}C, velocity enhancements of up to 2.5 times were observed, and interface breakdown occurred at interfacial Au concentrations of 11 at. %. Although qualitatively similar to thermal solid-phase epitaxy, these velocity enhancements are substantially reduced in magnitude while the interface breakdown occurs at much higher concentrations. Between 250 {degree}C and 400 {degree}C, Au is trapped at the moving interface with segregation coefficients {ital k}, which are approximately velocity and concentration independent and vary between 0.001 and 0.012. In contrast with classical segregation, however, {ital k} increases linearly with interface position during the initial stages of growth to a temperature-dependent steady-state value. At 250 {degree}C, for example, {ital k} increases by at least a factor of 4 to 0.012 during growth. These results suggest an evolving interface structure from the initial thermal configuration to an irradiation-induced steady-state configuration with a higher trapping efficiency.

  5. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    SciTech Connect

    Anglin, Kevin Goodhue, William D.; Swint, Reuel B.; Porter, Jeanne

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  6. Focused ion beam assisted three-dimensional rock imaging at submicron scale

    SciTech Connect

    Tomutsa, Liviu; Radmilovic, Velimir

    2003-05-09

    Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of gallium ions (Ga+) accelerated by potentials of up to 30 kV and currents up to 20,000 pA, yields very clean, flat surfaces in which the pore-grain boundaries appear in high contrast. No distortion of the pore boundaries due to the ion milling is apparent. After each milling step, as a new surface is exposed, an image of the surface is generated. Using secondary electrons or ions, resolutions as high as 10 nm can be obtained. Afterwards, the series of 2D images can be stacked in the computer and, using appropriate interpolation and surface rendering algorithms, the 3D pore structure is reconstructed.

  7. Optical properties of ion beam textured metals. [using copper, silicon, aluminum, titanium and stainless steels

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.; Weigand, A. J.; Mirtich, M. J.

    1977-01-01

    Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8 cm diameter electron bombardment ion source. Simultaneously sputter-deposited tantalum was used to facilitate the development of the surface microstructure. Scanning electron microscopy of the ion textured surfaces revealed two types of microstructure. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Spectral reflectance was measured using an integrating sphere and a holraum reflectometer. Total reflectance for air mass 0 and 2, solar absorptance and total emittance normalized for a 425 K black body were calculated from the reflectance measurements.

  8. Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

    NASA Astrophysics Data System (ADS)

    Intarasiri, S.; Yu, L. D.; Singkarat, S.; Hallén, A.; Lu, J.; Ottosson, M.; Jensen, J.; Possnert, G.

    2007-04-01

    Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C12+ implantation of a p-type (100) Si wafer at a fluence of 6.5×1017 ions/cm2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV I127 ions to a very low fluence of 1012 ions/cm2 at temperatures from 80 to 800 °C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.

  9. Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

    SciTech Connect

    Xing Qian; Herbots, N.; Hart, M.; Bradley, J. D.; Wilkens, B. J.; Sell, D. A.; Culbertson, R. J.; Whaley, S. D.; Sell, Clive H.; Kwong, Henry Mark Jr.

    2011-06-01

    The water affinity of Si-based surfaces is quantified by contact angle measurement and surface free energy to explain hydrophobic or hydrophilic behavior of silicone, silicates, and silicon surfaces. Surface defects such as dangling bonds, surface free energy including Lewis acid-base and Lifshitz-van der Waals components are discussed. Water nucleation and condensation is further explained by surface topography. Tapping mode atomic force microscopy (TMAFM) provides statistical analysis of the topography of these Si-based surfaces. The correlation of the above two characteristics describes the behavior of water condensation at Si-based surfaces. Surface root mean square roughness increasing from several A ring to several nm is found to provide nucleation sites that expedite water condensation visibly for silica and silicone. Hydrophilic surfaces have a condensation pattern that forms puddles of water while hydrophobic surfaces form water beads. Polymer adsorption on these surfaces alters the water affinity as well as the surface topography, and therefore controls condensation on Si-based surfaces including silicone intraocular lens (IOL). The polymer film is characterized by Rutherford backscattering spectrometry (RBS) in conjunction with 4.265 MeV {sup 12}C({alpha}, {alpha}){sup 12}C, 3.045 MeV {sup 16}O({alpha},{alpha}){sup 16}O nuclear resonance scattering (NRS), and 2.8 MeV elastic recoil detection (ERD) of hydrogen for high resolution composition and areal density measurements. The areal density of hydroxypropyl methylcellulose (HPMC) film ranges from 10{sup 18} atom/cm{sup 2} to 10{sup 19} atom/cm{sup 2} gives the silica or silicone surface a roughness of several A ring and a wavelength of 0.16{+-}0.02 {mu}m, and prevents fogging by forming a complete wetting layer during water condensation.

  10. Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

    SciTech Connect

    Kawakami, Y.; Kaneta, A.; Funato, M.; Su, L.; Zhu, Y.; Okamoto, K.; Kikuchi, A.; Kishino, K.

    2010-01-15

    The optical properties of InGaN/GaN quantum wells, which were nanopatterned into cylindrical shapes with diameters of 2 {mu}m, 1 {mu}m, or 500 nm by chemically assisted ion beam etching, were investigated. Photoluminescence (PL) and time-resolved PL measurements suggest inhomogeneous relaxation of the lattice-mismatch induced strain in the InGaN layers. By comparing to a strain distribution simulation, we found that partial stain relaxation occurs at the free side wall, but strain remains in the middle of the pillar structures. The strain relaxation leads to an enhanced radiative recombination rate by a factor of 4-8. On the other hand, nonradiative recombination processes are not strongly affected, even by postgrowth etching. Those characteristics are clearly reflected in the doughnut-shape emission patterns observed by optical microscopy.

  11. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  12. NEXAFS study on the local structures of DLC thin films formed by Ar cluster ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Kanda, Kazuhiro; Kitagawa, Teruyuki; Shimizugawa, Yutaka; Tsubakino, Harushige; Yamada, Isao; Matsui, Shinji

    2003-08-01

    Near-edge X-ray absorption fine structure (NEXAFS) spectra were measured for the optimization of synthesis conditions on the production of diamond-like carbon (DLC) thin films by the Ar gas cluster ion beam (GCIB) assisted deposition of fullerene. The sp2 contents of DLC films were estimated from the analysis of the peak corresponding to the transition of the excitation electron from a carbon 1s orbital to a π* orbital in the NEXAFS spectrum of the carbon K-edge over the excitation energy range 275-320 eV. Substrate temperature and Ar cluster ion acceleration voltage in the synthesis conditions of DLC films were optimized to make the sp2 content minimum.

  13. Effect of oxygen on ion-beam induced synthesis of SiC in silicon

    NASA Astrophysics Data System (ADS)

    Artamonov, V. V.; Valakh, M. Ya.; Klyui, N. I.; Melnik, V. P.; Romanyuk, A. B.; Romanyuk, B. N.; Yuhimchuk, V. A.

    1999-01-01

    The properties of Si-structures with a buried silicon carbide (SiC) layer created by high-dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. The effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz-Si or in Si (Cz-or Fz-) subjected to additional oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segregation and amorphous carbon film formation on SiC grain boundaries were revealed.

  14. Optical and Structural Properties of Silicon with Ion-Beam Synthesized InSb Nanocrystals

    NASA Astrophysics Data System (ADS)

    Komarov, F. F.; Romanov, I. A.; Vlasukova, L. A.; Milchanin, O. V.; Parkhomenko, I. N.; Kovaleva, T. B.; Korolik, O. V.; Mudryi, A. V.; Wendler, E.

    2017-01-01

    Transmission electron microscopy (TEM), Raman scattering (RS), and photoluminescence (PL) techniques are used to study the structure, phase composition, and radiative properties of silicon with implanted InSb nanocrystals produced by implanting Sb+ and In+ ions with energies of 350 keV and fluences of 3.5·1016 cm-2 followed by heat treatment at 1100°C for 3, 10, and 60 min. The TEM and RS data confirm the formation of InSb nanocrystals with sizes ranging from 2 to 50 nm in the implanted and annealed samples. A broad band in the 0.8-1.05 eV range is detected in low-temperature (4.2 K) PL spectra of the annealed samples. The possible mechanisms for the luminescence in this range are luminescence of InSb nanocrystals and radiative recombination between the conduction band of silicon and an In acceptor.

  15. Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

    NASA Astrophysics Data System (ADS)

    Akhter, Perveen

    In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced

  16. Decreased bacterial growth on titanium nanoscale topographies created by ion beam assisted evaporation

    PubMed Central

    Stolzoff, Michelle; Burns, Jason E; Aslani, Arash; Tobin, Eric J; Nguyen, Congtin; De La Torre, Nicholas; Golshan, Negar H; Ziemer, Katherine S; Webster, Thomas J

    2017-01-01

    Titanium is one of the most widely used materials for orthopedic implants, yet it has exhibited significant complications in the short and long term, largely resulting from poor cell–material interactions. Among these many modes of failure, bacterial infection at the site of implantation has become a greater concern with the rise of antibiotic-resistant bacteria. Nanostructured surfaces have been found to prevent bacterial colonization on many surfaces, including nanotextured titanium. In many cases, specific nanoscale roughness values and resulting surface energies have been considered to be “bactericidal”; here, we explore the use of ion beam evaporation as a novel technique to create nanoscale topographical features that can reduce bacterial density. Specifically, we investigated the relationship between the roughness and titanium nanofeature shapes and sizes, in which smaller, more regularly spaced nanofeatures (specifically 40–50 nm tall peaks spaced ~0.25 μm apart) were found to have more effect than surfaces with high roughness values alone. PMID:28223804

  17. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    NASA Astrophysics Data System (ADS)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna

    2010-11-01

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 4000C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier& Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  18. Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

    NASA Astrophysics Data System (ADS)

    Pallon, J.; Syväjärvi, M.; Wang, Q.; Yakimova, R.; Iakimov, T.; Elfman, M.; Kristiansson, P.; Nilsson, E. J. C.; Ros, L.

    2016-03-01

    Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

  19. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  20. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    NASA Astrophysics Data System (ADS)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (<1° departure) and smooth (2.0 nm root mean square line-edge roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  1. Ion beam-assisted template synthesis of nanowires on semiconducting substrate

    NASA Astrophysics Data System (ADS)

    Kaur, Jaskiran; Singh, Surinder; Kanjilal, Dinakar

    2013-08-01

    In this paper, we have studied the electrical properties of the randomly distributed metallic (Cu, Ni and Fe) nano-/micro wires on the silicon substrate. Deposition was carried out potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the Si substrate. Spin coated films were irradiated with 150 MeV Ni (+11) ions at a fluence of 5E8 ions/cm2, followed by Ultra-Violet (UV) irradiation and chemically etching in aqueous NaOH (6N, at room temperature). The size, shape and morphology of the synthesized nano-/micro structures is strongly dependent on the preparation conditions such as deposition potential, current density, electrolyte and etching conditions. Later, morphological and electrical properties of the so-deposited nano-/micro structures were studied.

  2. Neutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays

    SciTech Connect

    Gotoh, Yasuhito; Tsuji, Hiroshi; Taguchi, Shuhei; Ikeda, Keita; Kitagawa, Takayuki; Ishikawa, Junzo; Sakai, Shigeki

    2012-11-06

    Neutralization of space charge on a high-current and low-energy ion beam was attempted to reduce the divergence with an aid of low-energy electrons supplied from silicon based field emitter arrays (Si-FEAs). An argon ion beam with the energy of 500 eV and the current of 0.25 mA was produced by a microwave ion source. The initial beam divergence and the emittance were measured at the entrance of the analysis chamber in order to estimate the intrinsic factors for beam divergence. The current density distribution of the beam after transport of 730 mm was measured by a movable Faraday cup, with and without electron supply from Si-FEAs. A similar experiment was performed with tungsten filaments as an electron source. The results indicated that the electron supply from FEA had almost the same effect as the thermionic filament, and it was confirmed that both electron sources can neutralize the ion beam.

  3. Laser and optical system for laser assisted hydrogen ion beam stripping at SNS

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Rakhman, A.; Menshov, A.; Webster, A.; Gorlov, T.; Aleksandrov, A.; Cousineau, S.

    2017-03-01

    Recently, a high-efficiency laser assisted hydrogen ion (H-) beam stripping was successfully carried out in the Spallation Neutron Source (SNS) accelerator. The experiment was not only an important step toward foil-less H- stripping for charge exchange injection, it also set up a first example of using megawatt ultraviolet (UV) laser source in an operational high power proton accelerator facility. This paper reports in detail the design, installation, and commissioning result of a macro-pulsed multi-megawatt UV laser system and laser beam transport line for the laser stripping experiment.

  4. Real time x-ray studies during nanostructure formation on silicon via low energy ion beam irradiation using ultrathin iron films

    SciTech Connect

    El-Atwani, Osman; Suslova, Anastassiya; Gonderman, Sean; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2012-12-24

    Real time grazing incidence small angle x-ray scattering and x-ray fluorescence (XRF) are used to elucidate nanodot formation on silicon surfaces during low energy ion beam irradiation of ultrathin iron-coated silicon substrates. Four surface modification stages were identified: (1) surface roughening due to film erosion, (2) surface smoothing and silicon-iron mixing, (3) structure formation, and (4) structure smoothing. The results conclude that 2.5 Multiplication-Sign 10{sup 15} iron atoms in a 50 nm depth triggers surface nanopatterning with a correlated nanodots distance of 25 nm. Moreover, there is a wide window in time where the surface can have correlated nanostructures even after the removal of all the iron atoms from the sample as confirmed by XRF and ex-situ x-ray photoelectron spectroscopy (XPS). In addition, in-situ XPS results indicated silicide formation, which plays a role in the structure formation mechanism.

  5. Oxygen ion-beam microlithography

    DOEpatents

    Tsuo, Y. Simon

    1991-01-01

    A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

  6. Oxygen ion-beam microlithography

    DOEpatents

    Tsuo, Y.S.

    1991-08-20

    A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.

  7. Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

    NASA Technical Reports Server (NTRS)

    Hartley, F.; Malek, C.; Neogi, J.

    2001-01-01

    The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

  8. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

    SciTech Connect

    Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; Fowlkes, Jason D.; Tan, Shida; Livengood, Richard; Magel, Gregory A.; Moore, Thomas M.; Rack, Philip D.

    2016-10-04

    Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.

  9. The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

    NASA Astrophysics Data System (ADS)

    Sasaki, T.; Yoshida, N.; Takahashi, M.; Tomita, M.

    2008-12-01

    In order to determine an appropriate incident angle of low-energy (350-eV) oxygen ion beam for achieving the highest sputtering rate without degradation of depth resolution in SIMS analysis, a delta-doped sample was analyzed with incident angles from 0° to 60° without oxygen bleeding. As a result, 45° incidence was found to be the best analytical condition, and it was confirmed that surface roughness did not occur on the sputtered surface at 100-nm depth by using AFM. By applying the optimized incident angle, sputtering rate becomes more than twice as high as that of the normal incident condition.

  10. Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials.

    PubMed

    Wu, Jean-Yee; Lee, Cheng-Chung

    2006-05-20

    Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide (SiO2) films. The SiO2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman-Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO2 films show excellent optical properties with extra-low extinction coefficients (below 2x10(-5)) and have no water absorption. When the working gas is O2 for the ion-assisted source, the deposited SiO2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.

  11. Investigation of the mechanism of impurity assisted nanoripple formation on Si induced by low energy ion beam erosion

    SciTech Connect

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.; Ganesan, V.

    2015-01-14

    A detailed mechanism of the nanoripple pattern formation on Si substrates generated by the simultaneous incorporation of pure Fe impurities at low energy (1 keV) ion beam erosion has been studied. To understand and clarify the mechanism of the pattern formation, a comparative analysis of the samples prepared for various ion fluence values using two complimentary methods for nanostructure analysis, atomic force microscopy, and grazing incidence small angle x-ray scattering has been done. We observed that phase separation of the metal silicide formed during the erosion does not precede the ripple formation. It rather concurrently develops along with the ripple structure. Our work is able to differentiate among various models existing in the literature and provides an insight into the mechanism of pattern formation under ion beam erosion with impurity incorporation.

  12. Fundamental reliability of 1.5-nm-thick silicon oxide gate films grown at 150 deg. C by modified reactive ion beam deposition

    SciTech Connect

    Yamada, Hiroshi

    2008-01-15

    The reliability of 1.5-nm-thick silicon oxide gate films grown at 150 deg. C by modified reactive ion beam deposition (RIBD) with in situ pyrolytic-gas passivation (PGP) using N{sub 2}O and NF{sub 3} was investigated. RIBD uses low-energy-controlled reactive, ionized species and potentializes low-temperature film growth. Although the oxide films were grown at a low temperature of 150 deg. C, their fundamental indices of reliability, such as the time-dependent dielectric breakdown lifetime and interface state density, were almost equivalent to those of oxide films grown at 850 deg. C using a furnace. This is probably due to localized interfacial N and F atoms. The number density of interfacial N atoms was about seven times larger than that for the furnace-grown oxide films, and this is a key factor for improving the reliability through the compensation of residual inconsistent-state bonding sites.

  13. Influence of 700 °C vacuum annealing on fracture behavior of micro/nanoscale focused ion beam fabricated silicon structures

    NASA Astrophysics Data System (ADS)

    Goshima, Yoshiharu; Fujii, Tatsuya; Inoue, Shozo; Namazu, Takahiro

    2016-06-01

    In this paper, we describe the influence of 700 °C vacuum annealing on strength and fracture behavior of micro- and nano-scale Si structures fabricated by focused ion beam (FIB). Si nanowires (NWs) made from silicon-on-nothing (SON) membrane are fabricated using FIB. Microscale Si specimens are fabricated by conventional micromachining technologies and FIB. These specimens are tensioned to failure using specially developed microelectromechanical systems (MEMS) device and thin-film tensile tester, respectively. The mean fracture strengths of the nano- and microscale specimens are 5.6 and 1.6 GPa, respectively, which decrease to 2.9 and 0.9 GPa after vacuum annealing at 700 °C for only 10 s. These strength values do not vary with increasing annealing time. Fracture origin and its behavior are discussed in the light of fracture surface and FIB damage layer observations.

  14. Composition and Bonding in Amorphous Carbon Films Grown by Ion Beam Assisted Deposition: Influence of the Assistance Voltage

    SciTech Connect

    Albella, J.M.; Banks, J.C.; Climent-Font, A.; Doyle, B.L.; Gago, R.; Jimenez, I.; Terminello, L.J.

    1998-11-12

    Amorphous carbon films have been grown by evaporation of graphite with concurrent Ar+ ions bombardment assistance. The ion energy has been varied between 0-800 V while keeping a constant ion to carbon atom arrival ratio. Film composition and density were determined by ion scattering techniques (RBS and ERDA), indicating a negligible hydrogen content and a density dependence with the assistance voltage. The bonding structure of the films has been studied by Raman and X-ray Absorption Near-Edge (XANES) spectroscopy. Different qualitative effects have been found depending on the ion energy range. For ion energies below 300 eV, there is a densification of the carbon layer due to the increase in the sp3 content. For ion energies above 300 eV sputtering phenomena dominate over densification, and thinner films are found with increasing assistance voltage until no film is grown over 600 V. The films with the highest SP3 content are grown with intermediate energies between 200-300 V.

  15. Monolithic integration of a lithium niobate microresonator with a free-standing waveguide using femtosecond laser assisted ion beam writing

    PubMed Central

    Fang, Zhiwei; Xu, Yingxin; Wang, Min; Qiao, Lingling; Lin, Jintian; Fang, Wei; Cheng, Ya

    2017-01-01

    We demonstrated integrating a high quality factor lithium niobate microdisk resonator with a free-standing membrane waveguide. Our technique is based on femtosecond laser direct writing which produces the pre-structure, followed by focused ion beam milling which reduces the surface roughness of sidewall of the fabricated structure to nanometer scale. Efficient light coupling between the integrated waveguide and microdisk was achieved, and the quality factor of the microresonator was measured as high as 1.67 × 105. PMID:28358135

  16. Influence of Ag thickness on structural, optical, and electrical properties of ZnS/Ag/ZnS multilayers prepared by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Leng, Jian; Yu, Zhinong; Xue, Wei; Zhang, Ting; Jiang, Yurong; Zhang, Jie; Zhang, Dongpu

    2010-10-01

    The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function of Ag layer thickness. The characteristics of ZAZ multilayer are significantly improved up insertion of optimal Ag thickness between ZnS layers. The results show that due to bombardment of Ar ion beam, distinct Ag islands evolve into continuous Ag films at a thin Ag thickness of about 4 nm. The thinner Ag film as a thickness of 2 nm leads to high sheet resistance and low transmittance for the interface scattering induced by the Ag islands or noncontinuous films; and when the Ag thickness is over 4 nm, the ZAZ multilayer exhibits a remarkably reduced sheet resistance between 7-80 Ω/sq for the increase in carrier concentration and mobility of Ag layer, and a high transmittance over 90% for the interference phenomena of multilayers and low absorption and surface scattering of Ag layer. The ZAZ multilayer with 14 nm Ag film has a figure of merit up to 6.32×10-2 Ω-1, an average transmittance over 92% and a sheet resistance of 7.1 Ω/sq. The results suggest that ZAZ film has better optoelectrical properties than conditional indium tin oxide single layer.

  17. Ion Beam Propulsion Study

    NASA Technical Reports Server (NTRS)

    2008-01-01

    The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

  18. Study of pattern transition in nanopatterned Si(100) produced by impurity-assisted low-energy ion-beam erosion

    NASA Astrophysics Data System (ADS)

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.

    2017-04-01

    In this work, formation of self-organized Si nanostructures induced by pure Fe incorporation during normal incidence low-energy (1keV) Ar^+ ion bombardment is presented. It has been observed that the incorporation of Fe affects the evolution of the surface topography. The addition of Fe generates pronounced nanopatterns, such as dots, ripples and combinations of dots and ripples. The orientation of the ripple wave vector of the patterns formed is found to be in a direction normal to the Fe flow. The nanoripples with wavelength of the order of 39 nm produced is expected to be the lowest wavelength of the patterns reported on ion-beam-eroded structures under the incorporation of metallic impurities as per our knowledge. From the AFM and GISAXS analysis, it has been confirmed that the ripples formed are asymmetric in nature. The effect of the concentration of the Fe on morphological transition of the patterns has been studied using Rutherford backscattering measurements.

  19. Pulsed ion beam source

    DOEpatents

    Greenly, John B.

    1996-01-01

    An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.

  20. Ion beam texturing

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

  1. Pulsed ion beam source

    DOEpatents

    Greenly, John B.

    1997-01-01

    An improved pulsed ion beam source having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center.

  2. The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Kabyshev, A. V.; Konusov, F. V.; Pavlov, S. K.; Remnev, G. E.

    2016-02-01

    The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.

  3. Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1 - xGexH) films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Bhan, Mohan Krishan; Malhotra, L. K.; Kashyap, Subhash C.

    1989-09-01

    Thin films of hydrogenated amorphous silicon-germanium (a-Si1-xGex: H) alloys have been prepared by reactive ion beam sputtering of a composite target of silicon and germanium. The dependence of the deposition rate, conductivity-temperature variation, optical absorption coefficient, refractive index, imaginary part of the dielectric constant, hydrogen content, and infrared (IR) absorption spectra on germanium content (x) are reported and analyzed. For a typical composition—a-Si28Ge72:H (x=0.72), the effect of beam voltage, H2:Ar flow ratio, and substrate temperature on the material properties have also been investigated. For the films prepared with increasing x, the expected behavior of a decrease in both hydrogen content and band gap and an increase in the electrical conductivity have been observed. The films prepared at x>0.80 are found to be more homogeneous than the films deposited at 0.0

  4. Pulsed ion beam source

    DOEpatents

    Greenly, J.B.

    1997-08-12

    An improved pulsed ion beam source is disclosed having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center. 12 figs.

  5. Ion-beam technologies

    SciTech Connect

    Fenske, G.R.

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  6. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-01-01

    process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P+ beam implantation at 5 keV is also presented. With implantation dose of around 1016 cm-2, the electron concentration is about 2.5 x 1018 cm-3 and electron mobility is around 200 cm2/V•s. To demonstrate the suitability of scanning FIB lithography for the manufacture of integrated circuit devices, SOI MOSFET fabrication using the maskless, resistless ion beam lithography is demonstrated. An array of microcolumns can be built by stacking multi-aperture electrode and insulator layers. Because the multicusp plasma source can achieve uniform ion density over a large area, it can be used in conjunction with the array of microcolumns, for massively parallel FIB processing to achieve reasonable exposure throughput.

  7. Corrosion resistance for biomaterial applications of TiO2 films deposited on titanium and stainless steel by ion-beam-assisted sputtering.

    PubMed

    Pan, J; Leygraf, C; Thierry, D; Ektessabi, A M

    1997-06-05

    The high corrosion resistance and good biocompatibility of titanium and its alloys are due to a thin passive film that consists essentially of titanium dioxide. There is increasing evidence, however, that under certain conditions extensive titanium release may occur in vivo. An ion-beam-assisted sputtering deposition technique has been used to deposit thick and dense TiO2 films on titanium and stainless steel surfaces. In this study, using the following measurements these TiO2 films have been investigated in a phosphate-buffered saline solution: (1) open-circuit potential versus time of exposure, (2) electrochemical impedance spectroscopy, (3) potentiodynamic polarization, and (4) Mott-Schottky plot. A higher electrical film resistance, lower passive current density, and lower donor density (in the order of 10(15) cm-3) have been measured for the sputter-deposited oxide film on titanium in contrast to the naturally formed passive oxide film on titanium (donor density in the order of 10(20) cm-3). The improved corrosion protection of the sputter-deposited oxide film can be explained by a low defect concentration and, consequently, by a slow mass transport process across the film. As opposed to TiO2 on titanium, a deviation from normal n-type semiconducting Mott-Schottky behavior was observed for TiO2 on stainless steel.

  8. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching.

    PubMed

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-12-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(-2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

  9. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-04-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 1010 cm-2) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

  10. Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

    NASA Astrophysics Data System (ADS)

    Ma, B.; Li, M.; Fisher, B. L.; Balachandran, U.

    2002-07-01

    Biaxially textured yttria-stabilized zirconia (YSZ) films were grown on mechanically polished Hastelloy C276 (HC) substrates by ion-beam-assisted deposition and electron-beam evaporation. The surface root-mean-square (RMS) roughness of the polished HC substrates was ≈3 nm, as measured by atomic force microscopy (AFM). A water-cooled sample stage was used to hold the substrate temperature below 100 °C during deposition. RMS roughness of ≈3.3 nm was measured on the deposited YSZ films by AFM. X-ray pole figures were conducted for texture analysis; in-plane texture measured from YSZ (111) φ-scan FWHM was 13.2° and out-of-plane texture from the YSZ (002) ω-scan FWHM was 7.7°. An ≈10 nm thick CeO2 buffer layer was deposited on the YSZ film at 800 °C before YBCO films were ablated by pulsed laser deposition at 780 °C in a 250 mTorr flowing oxygen environment. Good in-plane texture with FWHM ≈ 7° was observed in YBCO films. Tc = 90 K, with sharp transition, and transport Jc of ≈2.2 × 106 A cm-2 were observed in a 0.5 μm thick, 5 mm wide, and 1 cm long sample at 77 K in self-field.

  11. Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944 nm high power diode laser

    NASA Astrophysics Data System (ADS)

    Ghadimi-Mahani, A.; Farsad, E.; Goodarzi, A.; Tahamtan, S.; Abbasi, S. P.; Zabihi, M. S.

    2015-11-01

    Single-layer and multi-layer coatings were applied on the surface of diode laser facets as mirrors. This thin film mirrors were designed, deposited, optimized and characterized. The effects of mirrors on facet passivation and optical properties of InGaAs/AlGaAs/GaAs diode lasers were investigated. High-Reflective (HR) and Anti-Reflective (AR) mirrors comprising of four double-layers of Al2O3/Si and a single layer of Al2O3, respectively, were designed and optimized by Macleod software for 944 nm diode lasers. Optimization of Argon flow rate was studied through Alumina thin film deposition by Ion Beam Assisted Deposition (IBAD) for mirror improvement. The nanostructured HR and AR mirrors were deposited on the front and back facet of the laser respectively, by IBAD system under optimum condition. Atomic Force Microscope (AFM), Vis-IR Spectrophotometer, Field Emission Scanning Electron Microscopy (FESEM) and laser characterization Test (P-I) were used to characterize various properties of mirrors and lasers. AFM images show mirror's root mean square roughness is nearly 1 nm. The Spectrophotometer results of the front facet transmission and the back facet reflection are in good agreement with the simulation results. Optical output power (P) versus driving current (I) characteristics, measured before and after coating the facet, revealed a significant output power enhancement due to optimized AR and HR optical coatings on facets.

  12. Method for Simulating the Thickness Distribution of a Cubic Boron Nitride Film Deposited on a Curved Substrate using Ion-beam-assisted Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Valizadeh, R.; Colligon, J. S.; Kanematsu, H.; Morisato, K.

    A method for simulating the thickness distribution of cubic boron nitride (cBN) films deposited on a curved substrate using ion-beam-assisted vapor deposition (IBAD) is established and discussed. The deposition conditions are (i) boron arriving rate is 3.2 Å/s, (ii) ion current density is in the range 600-1600 μA/cm2, and (iii) gas composition fed into the ion source is 36% N2 + Ar. It was found that, due to simultaneous deposition and sputtering, the boron resputtering yield (which depends on the ion incident angle during cBN deposition) estimated from experimental data was higher than that of the boron sputtering yield of the BN films with a density of 3.482 g/cm3 calculated by the TRIM code. Using the above empirical boron resputtering yield, it is estimated that in the case of static coating, cBN films would not be formed when the incident angle is more than 40°. However, with continuous waving, the distribution of film thickness improves and the results are consistent with the experimental results. This estimation also agrees with the experimental results of discrete waving deposition within an allowable margin of error

  13. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    SciTech Connect

    Nishiwaki, M.; Ueda, K. Asano, H.

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  14. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    SciTech Connect

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul; Wiedwald, Ulf

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  15. Focused ion beam system

    SciTech Connect

    Leung, K.; Gough, R.A.; Ji, Q.; Lee, Y.Y.

    1999-08-31

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

  16. Focused ion beam system

    DOEpatents

    Leung, Ka-Ngo; Gough, Richard A.; Ji, Qing; Lee, Yung-Hee Yvette

    1999-01-01

    A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

  17. Ion beam generating apparatus

    DOEpatents

    Brown, Ian G.; Galvin, James

    1987-01-01

    An ion generating apparatus utilizing a vacuum chamber, a cathode and an anode in the chamber. A source of electrical power produces an arc or discharge between the cathode and anode. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma is directed to an extractor which separates the electrons from the plasma, and accelerates the ions to produce an ion beam.

  18. Intense ion beam generator

    DOEpatents

    Humphries, Jr., Stanley; Sudan, Ravindra N.

    1977-08-30

    Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation.

  19. Ion beam analysis

    SciTech Connect

    Robertson, J.D. )

    1990-01-01

    A new ion beam analysis facility has recently been installed at a Van de Graaff accelerator. Its use is expected to support many energy and environmental research projects. Material composition and spatial distribution analyses at the facility are based upon Rutherford backscattering spectrometry, particle-induced X-ray emission, and particle-induced gamma-ray emission analysis. An overview of these three techniques is presented in this article.

  20. Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

    NASA Astrophysics Data System (ADS)

    Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

    2016-10-01

    Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

  1. Ion beam analysis of sialon ceramics

    NASA Astrophysics Data System (ADS)

    Vickridge, I. C.; Brown, I. W. M.; Ekström, T. C.; Trompetter, W. J.

    1996-09-01

    Sialons, or silicon-aluminium-oxy-nitrides, are a family of materials that have exceptional high temperature mechanical and tribological properties, but which are susceptible to oxidation. Ion beam analysis is an ideal tool to study the composition of the altered surface layer of sialons after oxidation. In particular simultaneous detection of gamma rays, charged particles, and X-rays induced by 1.4 MeV deuterons allows an almost complete picture of the composition to be obtained.

  2. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  3. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  4. Ion beam accelerator system

    NASA Technical Reports Server (NTRS)

    Aston, Graeme (Inventor)

    1984-01-01

    A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids (16, 18) with multiple pairs of aligned holes positioned to direct a group of beamlets (20) along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam (14). An accelerator electrode device (22) downstream from the extraction grids, is at a much lower potential than the grids to accelerate the combined beam.

  5. Ion beam accelerator system

    NASA Technical Reports Server (NTRS)

    Aston, G. (Inventor)

    1981-01-01

    A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids with multiple pairs of aligned holes positioned to direct a group of beamlets along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam. An accelerator electrode device downstream from the extraction grids is at a much lower potential than the grids to accelerate the combined beam. The application of the system to ion implantation is mentioned.

  6. ITEP MEVVA ion beam for rhenium silicide production

    SciTech Connect

    Kulevoy, T.; Seleznev, D.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Yakushin, P.; Petrenko, S.; Gerasimenko, N.; Medetov, N.; Zaporozhan, O.

    2010-02-15

    The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

  7. Introduction to Ion Beam Therapy

    SciTech Connect

    Martisikova, Maria

    2010-01-05

    Presently, ion beam therapy reaches an increasing interest within the field of radiation therapy, which is caused by the promising clinical results obtained in the last decades. Ion beams enable higher dose conformation to the tumor and increased sparing of the surrounding tissue in comparison to the standard therapy using high energy photons. Heavy ions, like carbon, offer in addition increased biological effectiveness, which makes them suitable for treatment of radioresistant tumors. This contribution gives an overview over the physical and biological properties of ion beams. Common fundamental principles of ion beam therapy are summarized and differences between standard therapy with high energy photons, proton and carbon ion therapy are discussed. The technologies used for the beam production and delivery are introduced, with emphasis to the differences between passive and active beam delivery systems. The last part concentrates on the quality assurance in ion therapy. Specialties of dosimetry in medical ion beams are discussed.

  8. Electromagnetic ion beam instabilities

    NASA Technical Reports Server (NTRS)

    Gary, S. P.; Foosland, D. W.; Smith, C. W.; Lee, M. A.; Goldstein, M. L.

    1984-01-01

    The linear theory of electromagnetic instabilities driven by an energetic ion beam streaming parallel to a magnetic field in a homogeneous Vlasov plasma is considered. Numerical solutions of the full dispersion equation are presented. At propagation parallel to the magnetic field, there are four distinct instabilities. A sufficiently energetic beam gives rise to two unstable modes with right-hand polarization, one resonant with the beam, the other nonresonant. A beam with sufficiently large T (perpendicular to B)/T (parallel to B) gives rise to the left-hand ion cyclotron anisotropy instability at relatively small beam velocities, and a sufficiently hot beam drives unstable a left-hand beam resonant mode. The parametric dependences of the growth rates for the three high beam velocity instabilities are presented here. In addition, some properties at oblique propagation are examined. It is demonstrated that, as the beam drift velocity is increased, relative maxima in growth rates can arise at harmonics of the ion cyclotron resonance for both right and left elliptically polarized modes.

  9. Ion beam and laser induced surface modifications

    NASA Astrophysics Data System (ADS)

    Appleton, B. R.

    1984-01-01

    The capabilities of energetic ion beam and laser processing of surfaces are reviewed. Ion implantation doping, ion beam mixing, and laser and electron beam processing techniques are capable of producing new and often unique surface properties. The inherent control of these techniques has led to significant advances in our ability to tailor the properties of solids for a wide range of technological applications. Equally important, these techniques have allowed tests of fundamental materials interactions under conditions not heretofore achievable and have resulted in increased understanding of a broad range of materials phenomena. These include new metastable phase formation, rapid nucleation and crystal growth kinetics, amorphous metals and metaglasses, supersaturated solid solutions and substitutional alloys, interface interactions, solute trapping, laser-assisted chemical modifications, and a host of other.

  10. Applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Gelerinter, E.; Spielberg, N.

    1980-01-01

    Wire adhesion in steel belted radial tires; carbon fibers and composite; cold welding, brazing, and fabrication; hydrogen production, separation, and storage; membrane use; catalysis; sputtering and texture; and ion beam implantation are discussed.

  11. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  12. Helicon plasma generator-assisted surface conversion ion source for the production of H(-) ion beams at the Los Alamos Neutron Science Center.

    PubMed

    Tarvainen, O; Rouleau, G; Keller, R; Geros, E; Stelzer, J; Ferris, J

    2008-02-01

    The converter-type negative ion source currently employed at the Los Alamos Neutron Science Center (LANSCE) is based on cesium enhanced surface production of H(-) ion beams in a filament-driven discharge. In this kind of an ion source the extracted H(-) beam current is limited by the achievable plasma density which depends primarily on the electron emission current from the filaments. The emission current can be increased by increasing the filament temperature but, unfortunately, this leads not only to shorter filament lifetime but also to an increase in metal evaporation from the filament, which deposits on the H(-) converter surface and degrades its performance. Therefore, we have started an ion source development project focused on replacing these thermionic cathodes (filaments) of the converter source by a helicon plasma generator capable of producing high-density hydrogen plasmas with low electron energy. In our studies which have so far shown that the plasma density of the surface conversion source can be increased significantly by exciting a helicon wave in the plasma, and we expect to improve the performance of the surface converter H(-) ion source in terms of beam brightness and time between services. The design of this new source and preliminary results are presented, along with a discussion of physical processes relevant for H(-) ion beam production with this novel design. Ultimately, we perceive this approach as an interim step towards our long-term goal, combining a helicon plasma generator with an SNS-type main discharge chamber, which will allow us to individually optimize the plasma properties of the plasma cathode (helicon) and H(-) production (main discharge) in order to further improve the brightness of extracted H(-) ion beams.

  13. Ion Beam Modification of Materials

    SciTech Connect

    Averback, B; de la Rubia, T D; Felter, T E; Hamza, A V; Rehn, L E

    2005-10-10

    This volume contains the proceedings of the 14th International Conference on Ion Beam Modification of Materials, IBMM 2004, and is published by Elsevier-Science Publishers as a special issue of Nuclear Instruments and Methods B. The conference series is the major international forum to present and discuss recent research results and future directions in the field of ion beam modification, synthesis and characterization of materials. The first conference in the series was held in Budapest, Hungary, 1978, and subsequent conferences were held every two years at locations around the Globe, most recently in Japan, Brazil, and the Netherlands. The series brings together physicists, materials scientists, and ion beam specialists from all over the world. The official conference language is English. IBMM 2004 was held on September 5-10, 2004. The focus was on materials science involving both basic ion-solid interaction processes and property changes occurring either during or subsequent to ion bombardment and ion beam processing in relation to materials and device applications. Areas of research included Nanostructures, Multiscale Modeling, Patterning of Surfaces, Focused Ion Beams, Defects in Semiconductors, Insulators and Metals, Cluster Beams, Radiation Effects in Materials, Photonic Devices, Ion Implantation, Ion Beams in Biology and Medicine including New Materials, Imaging, and Treatment.

  14. Thickness dependence of magnetic properties and giant magneto-impedance effect in amorphous Co73Si12B15 thin films prepared by Dual-Ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Wang, San-sheng; Hu, Teng; He, Tong-fu; Chen, Zi-yu; Yi, Zhong; Meng, Li-Fei

    2017-03-01

    Dual-Ion Beam Assisted Deposition is a suitable method for the preparation of giant magneto-impedance (GMI) materials. In this paper, Co73Si12B15 thin films with different thicknesses were prepared by Dual-Ion Beam Assisted Deposition, and the influences of film thickness on magnetic properties and GMI effect were investigated. It was found that the asymmetric magnetic hysteresis loop in the prepared Co73Si12B15 thin films occurs at ambient temperature, and the shift behavior of hysteresis loop associated with film thickness. With the film thickness increasing, the values of shift field and coercive field and other parameters such as remanence and shift ratio appeared complex variation. At a certain frequency, the large GMI effect is only observed in some films, which have good magnetic properties including low coercivity, low remanence ratio and high shift ratio. The results indicated that the thickness dependence of magnetic properties nonlinearly determined the GMI effect in Co73Si12B15 thin films.

  15. Stability of colliding ion beams

    SciTech Connect

    Foote, E.A.; Kulsrud, R.M.

    1980-11-01

    We determine conditions for stability of two identical colliding ion beams in the presence of neutralizing electrons, but no background ions. Such a situation is envisioned for the Counterstreaming Ion Torus. The ion beams are taken to be Maxwellian in their frames of reference. The approximation of electrostatic and electromagnetic modes is made. The stability of the electrostatic modes depends on the relation between the ion electron temperature ratio and the relative beam velocities. The stability of the electromagnetic mode depends on the relation between the ion plasma ..beta.. and the relative beam velocities.

  16. Variable-Energy Ion Beams For Modification Of Surfaces

    NASA Technical Reports Server (NTRS)

    Chutjian, Ara; Hecht, Michael H.; Orient, Otto J.

    1989-01-01

    Beam of low-energy negative oxygen ions used to grow layer of silicon dioxide on silicon. Beam unique both in purity, contains no molecular oxygen or other charged species, and in low energy, which is insufficient to damage silicon by physically displacing atoms. Low-energy growth accomplished with help of ion-beam apparatus. Directs electrons into crosswise stream of gas, generating stream of negative ions. Pair of charged plates separates ions from accompanying electrons and diverts ion beam to target - silicon substrate. Diameter of beam at target 0.5 to 0.75 cm. Promises useful device to study oxidation of semiconductors and, in certain applications, to replace conventional oxidation processes.

  17. Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

    SciTech Connect

    El-Atwani, Osman; Gonderman, Sean; Suslova, Anastassiya; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2013-03-28

    We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.

  18. Ion-beam machining of millimeter scale optics.

    PubMed

    Shanbhag, P M; Feinberg, M R; Sandri, G; Horenstein, M N; Bifano, T G

    2000-02-01

    An ion-beam microcontouring process is developed and implemented for figuring millimeter scale optics. Ion figuring is a noncontact machining technique in which a beam of high-energy ions is directed toward a target substrate to remove material in a predetermined and controlled fashion. Owing to this noncontact mode of material removal, problems associated with tool wear and edge effects, which are common in conventional machining processes, are avoided. Ion-beam figuring is presented as an alternative for the final figuring of small (<1-mm) optical components. The depth of the material removed by an ion beam is a convolution between the ion-beam shape and an ion-beam dwell function, defined over a two-dimensional area of interest. Therefore determination of the beam dwell function from a desired material removal map and a known steady beam shape is a deconvolution process. A wavelet-based algorithm has been developed to model the deconvolution process in which the desired removal contours and ion-beam shapes are synthesized numerically as wavelet expansions. We then mathematically combined these expansions to compute the dwell function or the tool path for controlling the figuring process. Various models have been developed to test the stability of the algorithm and to understand the critical parameters of the figuring process. The figuring system primarily consists of a duo-plasmatron ion source that ionizes argon to generate a focused (approximately 200-microm FWHM) ion beam. This beam is rastered over the removal surface with a perpendicular set of electrostatic plates controlled by a computer guidance system. Experimental confirmation of ion figuring is demonstrated by machining a one-dimensional sinusoidal depth profile in a prepolished silicon substrate. This profile was figured to within a rms error of 25 nm in one iteration.

  19. Production and characterization of ion beams from magnetically insulated diodes

    SciTech Connect

    Neri, J.M.

    1982-01-01

    The operation of magnetically insulated diodes and the characteristics of the resulting ion beams have been investigated using two pulsed power generators, LYNX at the 10/sup 9/W power level, and Neptune at the 10/sup 11/W power level. LYNX is a small magnetically insulated diode driven directly by a Marx bank. By changing the material used as the surface flashover ion source, the majority ion species generated by the diode could be chosen. Ion beams produced so far by this device are: protons, lithium, boron, carbon, sodium, strontium, and barium. Typical beam parameters for the ion beams are peak energies of 300 keV, current densities of 40 to 60 A/cm/sup 2/, and pulse durations of 300 to 400 nsec. The ion beam uniformity, divergence, and reproducibility were shown to be a function of the surface flashover source geometry. Finally, the LYNX ion beam was also used to anneal silicon crystals and other materials science experiments. The diode used on the Neptune generator was designed to study virtual cathode formation in a high power magnetically insulated diode. The physical cathode was replaced by electrons that ExB drift on the applied magnetic field lines. It was found that the best electrode configuration is one in which the electrons are required to only undergo the Hall drift to form the cathode. The divergence of the ion beam was examined with time-dependent and time-integrated shadowbox diagnostics. It was found that the intrinsic divergence of the ion beam does not have a strong directional dependence.

  20. Fabrication of high-density BiFeO3 nanodot and anti-nanodot arrays by anodic alumina template-assisted ion beam etching

    NASA Astrophysics Data System (ADS)

    Tian, Guo; Zhao, Lina; Lu, Zengxing; Yao, Junxiang; Fan, Hua; Fan, Zhen; Li, Zhongwen; Li, Peilian; Chen, Deyang; Zhang, Xiaoyan; Qin, Minhui; Zeng, Min; Zhang, Zhang; Dai, Jiyan; Gao, Xingsen; Liu, Jun-Ming

    2016-12-01

    Efficient and cost-competitive fabrication of high-quality ferroelectric and multiferroic nanostructures is of general interest. In this work, a top-down nano-patterning technique is developed by the Ar+ ion beam etching in combination with the sacrificed ultrathin anodic alumina (AAO) mask. This technique is demonstrated by preparation of the epitaxial BiFeO3 (BFO) nanostructures of various geometries, including nanodot and anti-nanodot arrays. The lateral dot size is as small as ∼60 nm and an ultrahigh dot density of ∼60 Gbit/inch2 is achieved. It is revealed that the etching process involves sequential shape evolution of both the AAO mask and the underlying BFO film, resulting in the nanodots and anti-nanodots arrays of various geometries. The as-etched BFO nanodots array exhibits well-established ferroelectric domain structures and reversible polarization switching, as examined by piezoresponse force microscopy (PFM). It is suggested that this technique is extendable to fabrication of a wide range of functional oxide nanostructures for potential nanoelectronic applications.

  1. Response of silicon multistrip detectors and a cesium iodide scintillator to a calcium ion beam of 0.5 GeV/u

    NASA Astrophysics Data System (ADS)

    Codino, A.; Miozza, M.; Brunetti, M. T.; Checcucci, B.; Federico, C.; Grimani, C.; Lanfranchi, M.; Macchiaiolo, T.; Menichelli, M.; Maffei, P.; Plouin, F.; Vocca, H.

    1997-02-01

    We have constructed and operated charge preamplifiers for silicon strip detectors with a dynamic range extending from fractions of minimum ionising particle (MIP) up to 16 124 MIPs. These silicon detectors combined with time-of-flight counters and cesium iodide scintillator form a segment of the VENUS detector that has been exposed to a calcium beam of 0.5 GeV/u at the GSI accelerator. The aim of the instrument is the identification of all nuclides of the periodic table of the elements. Measurements of electronic noise, cross-talk among channels and energy deposit resolutions in various experimental conditions for silicon detectors are given. The measured light output of the CsI(Tl) crystal induced by calcium is compared with that extrapolated from lower-energy data of various nuclide species determined in other experiments. The charge resolution for calcium ions, determined by the {dE }/{dχ } detectors and TOF counters of time resolution of 55 ± 7 ps, amounts to 0.42 charge units (rms). Improvements in ion discrimination with respect to the present detector configuration are considered.

  2. Ion beam microtexturing of surfaces

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1981-01-01

    Some recent work in surface microtecturing by ion beam sputtering is described. The texturing is accomplished by deposition of an impurity onto a substrate while simultaneously bombarding it with an ion beam. A summary of the theory regarding surface diffusion of impurities and the initiation of cone formation is provided. A detailed experimental study of the time-development of individual sputter cones is described. A quasi-liquid coating was observed that apparently reduces the sputter rate of the body of a cone compared to the bulk material. Experimental measurements of surface diffusion activation energies are presented for a variety of substrate-seed combinations and range from about 0.3 eV to 1.2 eV. Observations of apparent crystal structure in sputter cones are discussed. Measurements of the critical temperature for cone formation are also given along with a correlation of critical temperature with substrate sputter rate.

  3. Ion beam inertial confinement target

    DOEpatents

    Bangerter, Roger O.; Meeker, Donald J.

    1985-01-01

    A target for implosion by ion beams composed of a spherical shell of frozen DT surrounded by a low-density, low-Z pusher shell seeded with high-Z material, and a high-density tamper shell. The target has various applications in the inertial confinement technology. For certain applications, if desired, a low-density absorber shell may be positioned intermediate the pusher and tamper shells.

  4. Reactive ion beam figuring of optical aluminium surfaces

    NASA Astrophysics Data System (ADS)

    Bauer, Jens; Frost, Frank; Arnold, Thomas

    2017-03-01

    Ultra-smooth and arbitrarily shaped reflective optics are necessary for further progress in EUV/XUV lithography, x-ray and synchrotron technology. As one of the most important technological mirror optic materials, aluminium behaves in a rather difficult way in ultra-precision machining with such standard techniques as diamond-turning and subsequent ion beam figuring (IBF). In particular, in the latter, a strong surface roughening is obtained. Hence, up to now it has not been possible to attain the surface qualities required for UV or just visible spectral range applications. To overcome the limitations mainly caused by the aluminium alloy structural and compositional conditions, a reactive ion beam machining process using oxygen process gas is evaluated. To clarify the principle differences in the effect of oxygen gas contrary to oxygen ions on aluminium surface machining, we firstly focus on chemical-assisted ion beam etching (CAIBE) and reactive ion beam etching (RIBE) experiments in a phenomenological manner. Then, the optimum process route will be explored within a more quantitative analysis applying the concept of power spectral density (PSD) for a sophisticated treatment of the surface topography. Eventually, the surface composition is examined by means of dynamic secondary ion mass spectrometry (SIMS) suggesting a characteristic model scheme for the chemical modification of the aluminium surface during oxygen ion beam machining. Monte Carlo simulations were applied to achieve a more detailed process conception.

  5. Ion beam deposited protective films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1981-01-01

    Single or dual ion beam sources were used to deposit thin films for different applications. Metal and metal oxide films were evaluated as protective coatings for the materials. Film adherence was measured and the most promising films were then tested under environments similar to operating conditions. It was shown that some materials do protect die material (H-13 steel) and do reduce thermal fatigue. Diamondlike films have many useful applications. A series of experiments were conducted to define and optimize new approaches to the manufacture of such films. A dual beam system using argon and methane gases was developed to generate these films.

  6. Radioactive Ion Beams and Radiopharmaceuticals

    NASA Astrophysics Data System (ADS)

    Laxdal, R. E.; Morton, A. C.; Schaffer, P.

    2014-02-01

    Experiments performed at radioactive ion beam facilities shed new light on nuclear physics and nuclear structure, as well as nuclear astrophysics, materials science and medical science. The many existing facilities, as well as the new generation of facilities being built and those proposed for the future, are a testament to the high interest in this rapidly expanding field. The opportunities inherent in radioactive beam facilities have enabled the search for radioisotopes suitable for medical diagnosis or therapy. In this article, an overview of the production techniques and the current status of RIB facilities and proposals will be presented. In addition, accelerator-generated radiopharmaceuticals will be reviewed.

  7. High temperature coefficient of resistance achieved by ion beam assisted sputtering with no heat treatment in V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf)

    SciTech Connect

    Vardi, Naor; Sharoni, Amos

    2015-11-15

    Thermal imaging based on room temperature bolometer sensors is a growing market, constantly searching for improved sensitivity. One important factor is the temperature coefficient of resistance (TCR), i.e., the sensitivity of the active material. Herein, the authors report the improved TCR properties attainable by the “ion beam assisted deposition” method for room temperature deposition. V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf) thin-film alloys were fabricated on 1 μm thermal SiO{sub 2} atop Si (100) substrates by reactive magnetron cosputtering at room temperature using a low energy ion source, aimed at the film, to insert dissociated oxygen species and increase film density. The authors studied the influence of deposition parameters such as oxygen partial pressure, V to M ratio, and power of the plasma source, on resistance and TCR. The authors show high TCR (up to −3.7% K{sup −1}) at 300 K, and excellent uniformity, but also an increase in resistance. The authors emphasize that samples were prepared at room temperature with no heat treatment, much simpler than common processes that require annealing at high temperatures. So, this is a promising fabrication route for uncooled microbolometers.

  8. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  9. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-07

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.

  10. Ion beam texturing of surfaces

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.; Robinson, R. S.

    1979-01-01

    Textured surfaces, typically with conical structures, have been produced previously by simultaneously etching a surface and seeding that surface with another material. A theory based on surface diffusion predicts a variation in cone spacing with surface temperature, as well as a critical temperature below which cones will not form. Substantial agreement with theory has been found for several combinations of seed and surface materials, including one with a high sputter yield seed on a low sputter yield surface (gold on aluminum). Coning with this last combination was predicted by the theory for a sufficiently mobile seed material. The existence of a minimum temperature for the formation of cones should also be important to those interested in ion-beam machining smooth surfaces. Elements contained in the environmental contaminants or in the sputtered alloys or compounds may serve as seed material.

  11. ION BEAM FOCUSING MEANS FOR CALUTRON

    DOEpatents

    Backus, J.G.

    1959-06-01

    An ion beam focusing arrangement for calutrons is described. It provides a virtual focus of origin for the ion beam so that the ions may be withdrawn from an arc plasma of considerable width providing greater beam current and accuracy. (T.R.H.)

  12. Ion-Beam Analysis of Airborne Pollution

    NASA Astrophysics Data System (ADS)

    Harrington, Charles; Gleason, Colin; Schuff, Katie; Battaglia, Maria; Moore, Robert; Turley, Colin; Labrake, Scott; Vineyard, Michael

    2010-11-01

    An undergraduate laboratory research program in ion-beam analysis (IBA) of atmospheric aerosols is being developed to study pollution in the Capitol District and Adirondack Mountains of New York. The IBA techniques applied in this project include proton induced X-ray emission (PIXE), proton induced gamma-ray emission (PIGE), Rutherford backscattering (RBS), and proton elastic scattering analysis (PESA). These methods are well suited for studying air pollution because they are quick, non-destructive, require little to no sample preparation, and capable of investigating microscopic samples. While PIXE spectrometry is used to analyze most elements from silicon to uranium, the other techniques are being applied to measure some of the remaining elements and complement PIXE in the study of aerosols. The airborne particulate matter is collected using nine-stage cascade impactors that separate the particles according to size and the samples are bombarded with proton beams from the Union College 1.1-MV Pelletron Accelerator. The reaction products are measured with SDD X-ray, Ge gamma-ray, and Si surface barrier charged particle detectors. Here we report on the progress we have made on the PIGE, RBS, and PESA analysis of aerosol samples.

  13. Kinetic Simulations of Ion Beam Neutralization

    SciTech Connect

    Wang, Joseph

    2010-05-21

    Ion beam emission/neutralization is one of the most fundamental problems in spacecraft plasma interactions and electric propulsion. Although ion beam neutralization is readily achieved in experiments, the understanding of the underlying physical process remains at a rather primitive level. No theoretical or simulation models have convincingly explained the detailed neutralization mechanism, and no conclusions have been reached. This paper presents a fully kinetic simulation of ion beam neutralization and plasma beam propagation and discusses the physics of electron-ion coupling and the resulting propagation of a neutralized mesothermal plasma.

  14. Development of polyatomic ion beam system using liquid organic materials

    NASA Astrophysics Data System (ADS)

    Takaoka, G. H.; Nishida, Y.; Yamamoto, T.; Kawashita, M.

    2005-08-01

    We have developed a new type of polyatomic ion beam system using liquid organic materials such as octane and ethanol, which consists of a capillary type of nozzle, an ionizer, a mass-separator and a substrate holder. Ion current extracted after ionization was 430 μA for octane and 200 μA for ethanol, respectively. The mass-analysis was realized using a compact E × B mass filter, and the mass-analyzed ion beams were transferred toward the substrate. The ion current density at the substrate was a few μA/cm2 for the mass-separated ion species. Interactions of polyatomic ion beams with silicon (Si) surfaces were investigated by utilizing the ellipsometry measurement. It was found that the damaged layer thickness irradiated by the polyatomic ions with a mass number of about 40 was smaller than that by Ar ion irradiation at the same incident energy and ion fluence. The result indicated that the rupture of polyatomic ions occurred upon its impact on the Si surface with an incident energy larger than a few keV. In addition, the chemical modification of Si surfaces such as wettability could be achieved by adjusting the incident energy for the ethanol ions, which included all the fragment ions.

  15. Ion beam modification of injection moulded polymere materials

    NASA Astrophysics Data System (ADS)

    Wolf, G. K.; Kersten, H. J.

    1998-05-01

    Ion beam based treatments and processes are an ecologically friendly alternative for the metallization of polymers. Nowadays mainly chemical and electrochemical and plasma assisted techniques are used. In this contribution the copper metallization of high temperature thermoplasts using ion beam assisted deposition (IBAD) was studied. The applications in mind were magnetic shielding of cases for sensors. The influence of ion beam intensity and energy, deposition rate, preconditioning and substrate material on the Cu adhesion was investigated. As materials PPS (Polyphenylene sulfide) and LCP (Liquid Crystal Polymer) with different filling materials were used. It could be shown that the adhesion reacts very critical to the type of polymer and the type and concentration of filling material. The IBAD parameters giving best results are I/A ratios of 0.005-0.01 and energies of 0.5-2 keV. The highest adhesion force (≈27 N/mm 2) was measured on PPS. For LCP thin Ti interlayers increased the adhesion force ≈50% up to values above 10 N/mm 2.

  16. Study of surface reactions in plasma etching using mass-analyzed ion beams

    NASA Astrophysics Data System (ADS)

    Karahashi, Kazuhiro

    2001-10-01

    We have constructed a new mass-analyzed low-energy ion beam etching apparatus (MALIEA) for investigate desorption products from silicon or silicon dioxide surfaces during CFx+ (x=1-3) ion bombardments. In this paper, we describe this newly developed ion beam apparatus, and results of CF3+ ion bombardment experiments. The apparatus consists of an ion beam source, an ultra high vacuum (UHV) process chamber, and a detector chamber. As there are three differentially pumping stages between the source and process chamber, the process chamber was maintained at UHV condition during all experiments. Therefore, experiments were not affected by contaminations form the ion source. Pure ion beams such as F+, CF+, CF2+ and CF3+, were obtained with good mass resolutions by a 90\\x81‹ mass-selecting electromagnet. The sample is mounted on a manipulator, located at the foci of a hemispherical energy analyzer and x-ray sources to allow chemical analysis of irradiated surfaces. The desorption products and scattered ions were detected by a rotatable differentially pumped quadrupole mass spectrometer (QMS). In experiments of CF3+ irradiation on silicon dioxide surface\\x81@at 1000eV, etching rate was about 1.1 atoms/ion, and silicon flourides for etching products were detected by QMS. Therefore, it is possible to investigate the interaction between silicon or silicon dioxide surfaces and low-energy CFx+(x=1-3) ions with a well-defined energy. This work was supported by NEDO.

  17. Ion Beam Bombardment of Biological Tissue

    NASA Astrophysics Data System (ADS)

    Sangyuenyongpipat, S.; Yu, L. D.; Vilaithong, T.; Phanchaisri, B.; Anuntalabhochai, S.; Brown, I. G.

    2003-10-01

    While ion implantation has become a well-established technique for the surface modification of inorganic materials, the ion bombardment of cellular tissue has received little research attention. A program in ion beam bioengineering has been initiated at Chiang Mai University, and the ion beam induced transfer of plasmid DNA molecules into bacterial cells (E. coli) has been demonstrated. Subsequent work has been directed toward exploration of ion beam bombardment of plant cells in an effort to understand the possible mechanisms involved in the DNA transfer. In particular, ion beam bombardment of onion cells was carried out and the effects investigated. Among the novel features observed is the formation of "microcraters" - sub-micron surface features that could provide a pathway for the transfer of large molecules into the interior cell region. Here we describe our onion skin ion bombardment investigations.

  18. Negative Ion Beam Extraction and Emittance

    SciTech Connect

    Holmes, Andrew J. T.

    2007-08-10

    The use of magnetic fields to both aid the production of negative ions and suppress the co-extracted electrons causes the emittance and hence the divergence of the negative ion beam to increase significantly due to the plasma non-uniformity from jxB drift. This drift distorts the beam-plasma meniscus and experimental results of the beam emittance are presented, which show that non-uniformity causes the square of the emittance to be proportional to the 2/3 power of the extracted current density. This can cause the divergence of the negative ion beam to be significantly larger than its positive ion counterpart. By comparing results from positive and negative ion beam emittances from the same source, it is also possible to draw conclusions about their vulnerability to magnetic effects. Finally emittances of caesiated and un-caesiated negative ion beams are compared to show how the surface and volume modes of production interact.

  19. Biomedical applications of ion-beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Gibbons, D. F.; Vankampen, C. L.; Babbush, C. A.

    1979-01-01

    Microscopically-rough surface texture of various biocompatible alloys and polymers produced by ion-beam sputtering may result in improvements in response of hard or soft tissue to various surgical implants.

  20. Neurosurgical applications of ion beams

    NASA Astrophysics Data System (ADS)

    Fabrikant, Jacob I.; Levy, Richard P.; Phillips, Mark H.; Frankel, Kenneth A.; Lyman, John T.

    1989-04-01

    The program at Donner Pavilion has applied nuclear medicine research to the diagnosis and radiosurgical treatment of life-threatening intracranial vascular disorders that affect more than half a million Americans. Stereotactic heavy-charged-particle Bragg peak radiosurgery, using narrow beams of heavy ions, demonstrates superior biological and physical characteristics in brain over X-and γ-rays, viz., improved dose distribution in the Bragg peak and sharp lateral and distal borders and less scattering of the beam. Examination of CNS tissue response and alteration of cerebral blood-flow dynamics related to heavy-ion Bragg peak radiosurgery is carried out using three-dimensional treatment planning and quantitative imaging utilizing cerebral angiography, computerized tomography (CT), magnetic resonance imaging (MRI), cine-CT, xenon X-ray CT and positron emission tomography (PET). Also under examination are the physical properties of narrow heavy-ion beams for improving methods of dose delivery and dose distribution and for establishing clinical RBE/LET and dose-response relationships for human CNS tissues. Based on the evaluation and treatment with stereotactically directed narrow beams of heavy charged particles of over 300 patients, with cerebral angiography, CT scanning and MRI and PET scanning of selected patients, plus extensive clinical and neuroradiological followup, it appears that Stereotactic charged-particle Bragg peak radiosurgery obliterates intracranial arteriovenous malformations or protects against rebleeding with reduced morbidity and no mortality. Discussion will include the method of evaluation, the clinical research protocol, the Stereotactic neuroradiological preparation, treatment planning, the radiosurgery procedure and the protocol for followup. Emphasis will be placed on the neurological results, including the neuroradiological and clinical response and early and late delayed injury in brain leading to complications (including vasogenic edema

  1. Ion Beam Therapy in Europe

    NASA Astrophysics Data System (ADS)

    Kraft, Gerhard

    2009-03-01

    At present, seven facilities in Europe treat deep-seated tumors with particle beams, six with proton beams and one with carbon ions. Three of these facilities are in Moscow, St. Petersburg and Dubna, Russia. Other facilities include the TSL Uppsala, Sweden, CPO Orsay, France, and PSI Villigen, Switzerland, all for proton therapy, and GSI, Darmstadt, Germany, which utilizes carbon ions only. But only two of these facilities irradiate with scanned ion beams: the Paul Scherer Institute (PSI), Villigen (protons) and the Gesellschaft für Schwerionenforschung (GSI), Darmstadt. These two facilities are experimental units within physics laboratories and have developed the technique of intensity-modulated beam scanning in order to produce irradiation conforming to a 3-D target. There are three proton centers presently under construction in Munich, Essen and Orsay, and the proton facility at PSI has added a superconducting accelerator connected to an isocentric gantry in order to become independent of the accelerator shared with the physics research program. The excellent clinical results using carbon ions at National Institute of Radiological Science (NIRS) in Chiba and GSI have triggered the construction of four new heavy-ion therapy projects (carbon ions and protons), located in Heidelberg, Pavia, Marburg and Kiel. The projects in Heidelberg and Pavia will begin patient treatment in 2009, and the Marburg and Kiel projects will begin in 2010 and 2011, respectively. These centers use different accelerator designs but have the same kind of treatment planning system and use the same approach for the calculation of the biological effectiveness of the carbon ions as developed at GSI [1]. There are many other planned projects in the works. Do not replace the word "abstract," but do replace the rest of this text. If you must insert a hard line break, please use Shift+Enter rather than just tapping your "Enter" key. You may want to print this page and refer to it as a style

  2. Ion beam processing of advanced electronic materials

    SciTech Connect

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.; International Business Machines Corp., Yorktown Heights, NY . Thomas J. Watson Research Center; Oak Ridge National Lab., TN )

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

  3. TXRF spectrometry at ion beam excitation

    NASA Astrophysics Data System (ADS)

    Egorov, V.; Egorov, E.; Afanas’ef, M.

    2017-02-01

    The work presents short discussion of TXRF and PIXE methods peculiarities. Taking into account of these peculiarities we elaborate the experimental scheme for TXRF measurements at ion beam excitation of characteristical fluorescence. The scheme is built on base of the planar X-ray waveguide-resonator with specific design. Features of the new experimental method and possibilities of Sokol-3 ion beam analytical complex were used for the method application in real measurements.

  4. Ion beam microtexturing and enhanced surface diffusion

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1982-01-01

    Ion beam interactions with solid surfaces are discussed with particular emphasis on microtexturing induced by the deliberate deposition of controllable amounts of an impurity material onto a solid surface while simultaneously sputtering the surface with an ion beam. Experimental study of the optical properties of microtextured surfaces is described. Measurements of both absorptance as a function of wavelength and emissivity are presented. A computer code is described that models the sputtering and ion reflection processes involved in microtexture formation.

  5. Mass spectrometer and methods of increasing dispersion between ion beams

    DOEpatents

    Appelhans, Anthony D.; Olson, John E.; Delmore, James E.

    2006-01-10

    A mass spectrometer includes a magnetic sector configured to separate a plurality of ion beams, and an electrostatic sector configured to receive the plurality of ion beams from the magnetic sector and increase separation between the ion beams, the electrostatic sector being used as a dispersive element following magnetic separation of the plurality of ion beams. Other apparatus and methods are provided.

  6. Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth

    SciTech Connect

    Groves, James R; De Paula, Raymond F; Hayes, Garrett H; Li, Joel B; Hammond, Robert H; Salleo, Alberto; Clemens, Bruce M

    2010-05-07

    We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

  7. Intense non-relativistic cesium ion beam

    SciTech Connect

    Lampel, M.C.

    1984-02-01

    The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm.

  8. Imaging nanophotonic modes of microresonators using a focused ion beam

    NASA Astrophysics Data System (ADS)

    Twedt, Kevin A.; Zou, Jie; Davanco, Marcelo; Srinivasan, Kartik; McClelland, Jabez J.; Aksyuk, Vladimir A.

    2016-01-01

    Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics, biosensing, microfludics, cavity optomechanics and optical frequency combs. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high-quality-factor resonances. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam. An ion beam (radius of ≈50 nm) induces a picometre-scale deformation of the resonator surface, which we detect through shifts in the optical resonance wavelengths. We map five modes of a silicon microdisk resonator (Q ≥ 20,000) with high spatial and spectral resolution. Our technique also enables in situ observation of ion implantation damage and relaxation dynamics in a silicon lattice.

  9. Metal-assisted chemical etching of silicon: a review.

    PubMed

    Huang, Zhipeng; Geyer, Nadine; Werner, Peter; de Boor, Johannes; Gösele, Ulrich

    2011-01-11

    This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

  10. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  11. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  12. Fundamental Concepts of Ion-Beam Processing

    NASA Astrophysics Data System (ADS)

    Averback, R. S.; Bellon, P.

    The basic concepts underlying the response of materials to ion-beam irradiation are outlined. These include the slowing of energetic ions, the creation of defects, sputtering, ion-beam mixing, the acceleration of kinetic processes, and phase transformations. Several examples are cited to illustrate how each of these concepts can be exploited to modify materials in ways not easily achieved, or not even possible, by more conventional processing methods. The chapter attempts to provide a physical understanding of the basic effects of ion-beam irradiation on materials, to enable readers in other areas of research to better understand the more technical chapters that follow, and to develop ideas relevant to their own disciplines. We provide references to more quantitative treatments of the topics covered here.

  13. Pseudo ribbon metal ion beam source

    SciTech Connect

    Stepanov, Igor B. Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

    2014-02-15

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

  14. Silicon fluxes in the scrape-off layer plasma during silicon-assisted operation of TEXTOR

    NASA Astrophysics Data System (ADS)

    Rubel, M.; Wienhold, P.; Almqvist, N.; Emmoth, B.; Esser, H. G.; Könen, L.; von Seggern, J.; Winter, J.

    1995-04-01

    Surface collector probes were applied at TEXTOR for the investigation of silicon fluxes in the scrape-off layer during the first silicon-assisted (silane puffing, siliconization) operation of a tokamak. Probe exposures were made in order to measure the evolution of Si fluxes and the influence of silicon on the behaviour of other impurity fluxes like boron, oxygen and metals. Studies were performed under different conditions: heating mode, plasma density and gas filling. Comparative exposures were made before introduction of Si into the machine as well as immediately and long time after the siliconization. The exposed graphite samples were examined by surface analysis techniques, including Auger electron and Rutherford backscattering spectroscopies, nuclear reaction analysis and ultra-high resolution microscopies. The most important findings are concerned with: (i) the relation between silicon to carbon and silicon to oxygen in the deposits; (ii) the change in radial profiles of Si, B and D fluxes during consecutive stages of the silicon-assisted operation, and the retention of deuterium in the Si containing codeposited layers. The influence of plasma density on the fluxes is considered and gettering of oxygen by silicon is also addressed. Comparison is also made to the results of VUV spectroscopy signals of silicon and oxygen impurities in the plasma.

  15. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Iberi, Vighter O.; Fowlkes, Jason Davidson; Tan, Shida; Livengood, Rick; Rack, Philip D.

    2016-02-16

    Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.

  16. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

    DOE PAGES

    Stanford, Michael G.; Lewis, Brett B.; Iberi, Vighter O.; ...

    2016-02-16

    Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposuremore » process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.« less

  17. Potential biomedical applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Babbush, C. A.; Vankampen, C. L.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

  18. Focused ion beam source method and apparatus

    DOEpatents

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    2000-01-01

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  19. Ion-beam technology and applications

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.; Robson, R. R.; Sovey, J. S.

    1977-01-01

    Ion propulsion research and development yields a mature technology that is transferable to a wide range of nonpropulsive applications, including terrestrial and space manufacturing. A xenon ion source was used for an investigation into potential ion-beam applications. The results of cathode tests and discharge-chamber experiments are presented. A series of experiments encompassing a wide range of potential applications is discussed. Two types of processes, sputter deposition, and erosion were studied. Some of the potential applications are thin-film Teflon capacitor fabrication, lubrication applications, ion-beam cleaning and polishing, and surface texturing.

  20. Potential biomedical applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Van Kampen, C. L.; Babbush, C. A.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic prosthesis fixation, and dental implants.

  1. Focused-Ion-Beam Material Removal Rates

    DTIC Science & Technology

    1993-09-01

    AD-A270 852 SIll II 111111111 lillI I ARMY RESEARCH LABORATORY Focused -Ion-Beam Material Removal Rates by Bruce GeOl ARL-MR-1 14 September 1993 93...DATES COVERED September 1993 Summary, January 1991-present 4. TITLE AND SUBTITLE 5. FUNDING NUMBERS Focused -Ion-Beam Material Removal Rates PE: 91A 6...AUTHOR( S ) Bruce Geil 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION U.S. Army Research Laboratory REPORT NUMBER Attn

  2. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  3. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  4. The role of space charge compensation for ion beam extraction and ion beam transport (invited)

    SciTech Connect

    Spädtke, Peter

    2014-02-15

    Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation.

  5. Adaptation of ion beam technology to microfabrication of solid state devices and transducers

    NASA Technical Reports Server (NTRS)

    Topich, J. A.

    1978-01-01

    A number of areas were investigated to determine the potential uses of ion beam techniques in the construction of solid state devices and transducers and the packaging of implantable electronics for biomedical applications. The five areas investigated during the past year were: (1) diode-like devices fabricated on textured silicon; (2) a photolithographic technique for patterning ion beam sputtered PVC (polyvinyl chloride); (3) use of sputtered Teflon as a protective coating for implantable pressure sensors; (4) the sputtering of Macor to seal implantable hybrid circuits; and (5) the use of sputtered Teflon to immobilize enzymes.

  6. Adaptation of ion beam technology to microfabrication of solid state devices and transducers

    NASA Technical Reports Server (NTRS)

    Topich, J. A.

    1977-01-01

    It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

  7. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  8. Bias-assisted KOH etching of macroporous silicon membranes

    NASA Astrophysics Data System (ADS)

    Mathwig, K.; Geilhufe, M.; Müller, F.; Gösele, U.

    2011-03-01

    This paper presents an improved technique to fabricate porous membranes from macroporous silicon as a starting material. A crucial step in the fabrication process is the dissolution of silicon from the backside of the porous wafer by aqueous potassium hydroxide to open up the pores. We improved this step by biasing the silicon wafer electrically against the KOH. By monitoring the current-time characteristics a good control of the process is achieved and the yield is improved. Also, the etching can be stopped instantaneously and automatically by short-circuiting Si and KOH. Moreover, the bias-assisted etching allows for the controlled fabrication of silicon dioxide tube arrays when the silicon pore walls are oxidized and inverted pores are released.

  9. Metal-assisted chemical etch porous silicon formation method

    DOEpatents

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  10. Focused ion beam micromilling and articles therefrom

    DOEpatents

    Lamartine, Bruce C.; Stutz, Roger A.

    1998-01-01

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are isclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters.

  11. Future Directions in Ion Beam Therapy

    NASA Astrophysics Data System (ADS)

    Habermehl, Daniel; Combs, Stephanie; Debus, Jürgen

    There is a growing interest in ion beam therapy (IBT) worldwide which has led to an increasing number of new treatment facilities. This development is accompanied by intensive radiobiological, physical and clinical research of both proton therapy (PT) and carbon ion radiotherapy (CIRT). Current developments in IBT with high impact for future challenges will be summarized in this chapter.

  12. Ion beam analysis techniques in interdisciplinary applications

    SciTech Connect

    Respaldiza, Miguel A.; Ager, Francisco J.

    1999-11-16

    The ion beam analysis techniques emerge in the last years as one of the main applications of electrostatic accelerators. A short summary of the most used IBA techniques will be given as well as some examples of applications in interdisciplinary sciences.

  13. Ion Beam Analysis Techniques in Interdisciplinary Applications

    SciTech Connect

    Respaldiza, Miguel A.; Ager, Francisco J.

    1999-12-31

    The ion beam analysis techniques emerge in the last years as one of the main applications of electrostatic accelerators. A short summary of the most used IBA techniques will be given as well as some examples of applications in interdisciplinary sciences.

  14. Focused ion beam micromilling and articles therefrom

    DOEpatents

    Lamartine, B.C.; Stutz, R.A.

    1998-06-30

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are disclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters. 6 figs.

  15. Applications of the Lithium Focused Ion Beam: Nanoscale Electrochemistry and Microdisk Mode Imaging

    NASA Astrophysics Data System (ADS)

    McGehee, William; Takeuchi, Saya; Michels, Thomas; Oleshko, Vladimir; Aksyuk, Vladimir; Soles, Christopher; McClelland, Jabez; CenterNanoscale Science; Technology at NIST Collaboration; Materials Measurement Laboratory at NIST Collaboration

    2016-05-01

    The NIST-developed lithium Focused-Ion-Beam (LiFIB) system creates a low-energy, picoampere-scale ion beam from a photoionized gas of laser-cooled atoms. The ion beam can be focused to a <30 nm spot and scanned across a sample. This enables imaging through collection of ion-induced secondary electrons (similar to SEM) as well as the ability to selectively deposit lithium-ions into nanoscale volumes in a material. We exploit this second ability of the LiFIB to selectively ''titrate'' lithium ions as a means of probing the optical modes in microdisk resonators as well as for exploring nanoscale, Li-ion electrochemistry in battery-relevant materials. We present an overview of both measurements, including imaging of the optical mode in a silicon microdisk and a comparison of FIB and electrochemical lithiation of tin.

  16. Intense Pulsed Heavy Ion Beam Technology

    NASA Astrophysics Data System (ADS)

    Masugata, Katsumi; Ito, Hiroaki

    Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm2 was obtained. The beam consists of aluminum ions (Al(1-3)+) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89 %. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were succesively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm2 was observed in the cathode, which suggests the bipolar pulse acceleration.

  17. Ion beam and plasma jet based methods in ultra-precision optics manufacturing

    NASA Astrophysics Data System (ADS)

    Arnold, Th.; Boehm, G.; Paetzelt, H.; Pietag, F.

    2015-01-01

    Ion beam and plasma jet based techniques can be used in alternative machining processes for generating and finishing of ultra-precision optical surfaces. Since atomistic mechanisms are responsible for surface material modification, etching, and deposition, very high accuracy on the atomic level can be achieved. Various advanced techniques like pulse-width modulated ion beam figuring, sub-aperture reactive ion beam etching, or ion beam assisted structuring, planarization and smoothing technologies have been investigated aiming at precision on sub-nanometer height scale and lateral scales ranging over the full spatial wavelength range from nanometers to meters. Additionally, different atmospheric reactive plasma jet processes and plasma jet assisted process chains for generating, correction and smoothing of complex shaped optical surfaces like aspheres with large departures to best fit sphere or free forms exhibiting strong gradients have been developed in the last decade. In the paper an overview to the most recent trends of non-conventional ultra-precision optics processing is given and latest results of optics manufacturing are shown. Specific examples are given to demonstrate that form generation (e.g. for laser beam shaping optics) and surface finishing and polishing using atmospheric plasma jet tools are promising applications exhibiting advantages with respect to process efficiency and flexibility. Furthermore, the capabilities of ion beam surface figure correction using a new approach to control the tool function are demonstrated.

  18. Irradiation of Materials using Short, Intense Ion Beams

    NASA Astrophysics Data System (ADS)

    Seidl, Peter; Ji, Q.; Persaud, A.; Feinberg, E.; Silverman, M.; Sulyman, A.; Waldron, W. L.; Schenkel, T.; Barnard, J. J.; Friedman, A.; Grote, D. P.; Gilson, E. P.; Kaganovich, I. D.; Stepanov, A.; Zimmer, M.

    2016-10-01

    We present experiments studying material properties created with nanosecond and millimeter-scale ion beam pulses on the Neutralized Drift Compression Experiment-II at Berkeley Lab. The explored scientific topics include the dynamics of ion induced damage in materials, materials synthesis far from equilibrium, warm dense matter and intense beam-plasma physics. We describe the improved accelerator performance, diagnostics and results of beam-induced irradiation of thin samples of, e.g., tin and silicon. Bunches with >3x1010 ions/pulse with 1-mm radius and 2-30 ns FWHM duration and have been created. To achieve the short pulse durations and mm-scale focal spot radii, the 1.2 MeV He+ ion beam is neutralized in a drift compression section which removes the space charge defocusing effect during the final compression and focusing. Quantitative comparison of detailed particle-in-cell simulations with the experiment play an important role in optimizing the accelerator performance and keep pace with the accelerator repetition rate of <1/minute. This work was supported by the Office of Science of the US Department of Energy under contracts DE-AC0205CH11231 (LBNL), DE-AC52-07NA27344 (LLNL) and DE-AC02-09CH11466 (PPPL).

  19. Replication of the nano-scale mold fabricated with focused ion beam

    NASA Astrophysics Data System (ADS)

    Gao, J. X.; Chan-Park, M. B.; Xie, D. Z.; Ngoi, Bryan K. A.

    2004-12-01

    Silicon mold fabricated with Focused Ion Beam lithography (FIB) was used to make silicone elastomer molds. The silicon mold is composed of lattice of holes which the diameter and depth are about 200 nm and 60 nm, respectively. The silicone elastomer material was then used to replicate slavery mold. Our study show the replication process with the elastomer mold had been performed successfully and the diameter of humps on the elastomer mold is near to that of holes on the master mold. But the height of humps in the elastomer mold is only 42 nm and it is different from the depth of holes in the master mold.

  20. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  1. High-powered pulsed-ion-beam acceleration and transport

    SciTech Connect

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

  2. Atomic-scale thermocapillary flow in focused ion beam milling

    SciTech Connect

    Das, K.; Johnson, H. T.; Freund, J. B.

    2015-05-15

    Focused ion beams provide a means of nanometer-scale manufacturing and material processing, which is used for applications such as forming nanometer-scale pores in thin films for DNA sequencing. We investigate such a configuration with Ga{sup +} bombardment of a Si thin-film target using molecular dynamics simulation. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A flow model with Marangoni forcing, based upon the temperature gradient and geometry from the atomistic simulation, indeed reproduces the flow and thus could be used to anticipate such flows and their influence in applications.

  3. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    SciTech Connect

    Persaud, A.; Barnard, J. J.; Guo, H.; Hosemann, P.; Lidia, S.; Minor, A. M.; Seidl, P. A.; Schenkel, T.

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.

  4. Accessing defect dynamics using intense, nanosecond pulsed ion beams

    DOE PAGES

    Persaud, A.; Barnard, J. J.; Guo, H.; ...

    2015-06-18

    Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystalmore » Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.« less

  5. Rhenium ion beam for implantation into semiconductors

    SciTech Connect

    Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.; Kraevsky, S. V.; Yakushin, P. E.; Khoroshilov, V. V.; Gerasimenko, N. N.; Smirnov, D. I.; Fedorov, P. A.; Temirov, A. A.

    2012-02-15

    At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.

  6. Scanning He+ Ion Beam Microscopy and Metrology

    SciTech Connect

    Joy, David C.

    2011-11-10

    The CD-SEM has been the tool of choice for the imaging and metrology of semiconductor devices for the past three decades but now, with critical dimensions at the nanometer scale, electron beam instruments can no longer deliver adequate performance. A scanning microscope using a He+ ion beam offers superior resolution and depth of field, and provides enhanced imaging contrast. Device metrology performed using ion beam imaging produces data which is comparable to or better than that from a conventional CD-SEM although there are significant differences in the experimental conditions required and in the details of image formation. The charging generated by a He+ beam, and the sample damage that it can cause, require care in operation but are not major problems.

  7. Ion Beam Scattering by Background Helium

    NASA Astrophysics Data System (ADS)

    Grillet, Anne; Hughes, Thomas; Boerner, Jeremiah

    2015-11-01

    The presence of background gases can cause charged particle beams to become more diffuse due to scattering. Calculations for the transport of an ion beam have been performed using Aleph, a particle-in-cell plasma modeling code, and verified against a general envelop equation for charged particle beams. We have investigated the influence of background helium on the coherence and transmitted current of the ion beam. Collisions between ions and neutral particles were calculated assuming isotropic elastic scattering. Since this tends to predict larger scattering angles than are expected at high energies, these are conservative estimates for beam scattering. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration.

  8. Laser-cooled continuous ion beams

    SciTech Connect

    Schiffer, J.P.; Hangst, J.S.; Nielsen, J.S.

    1995-08-01

    A collaboration with a group in Arhus, Denmark, using their storage ring ASTRID, brought about better understanding of ion beams cooled to very low temperatures. The longitudinal Schottky fluctuation noise signals from a cooled beam were studied. The fluctuation signals are distorted by the effects of space charge as was observed in earlier measurements at other facilities. However, the signal also exhibits previously unobserved coherent components. The ions` velocity distribution, measured by a laser fluorescence technique suggests that the coherence is due to suppression of Landau damping. The observed behavior has important implications for the eventual attainment of a crystalline ion beam in a storage ring. A significant issue is the transverse temperature of the beam -- where no direct diagnostics are available and where molecular dynamics simulations raise interesting questions about equilibrium.

  9. Ion beam driven warm dense matter experiments

    NASA Astrophysics Data System (ADS)

    Bieniosek, F. M.; Ni, P. A.; Leitner, M.; Roy, P. K.; More, R.; Barnard, J. J.; Kireeff Covo, M.; Molvik, A. W.; Yoneda, H.

    2007-11-01

    We report plans and experimental results in ion beam-driven warm dense matter (WDM) experiments. Initial experiments at LBNL are at 0.3-1 MeV K+ beam (below the Bragg peak), increasing toward the Bragg peak in future versions of the accelerator. The WDM conditions are envisioned to be achieved by combined longitudinal and transverse neutralized drift compression to provide a hot spot on the target with a beam spot size of about 1 mm, and pulse length about 1-2 ns. The range of the beams in solid matter targets is about 1 micron, which can be lengthened by using porous targets at reduced density. Initial experiments include an experiment to study transient darkening at LBNL; and a porous target experiment at GSI heated by intense heavy-ion beams from the SIS 18 storage ring. Further experiments will explore target temperature and other properties such as electrical conductivity to investigate phase transitions and the critical point.

  10. Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Nasyrov, K. A.; Shaimeev, S. S.; Gritsenko, V. A.; Han, J. H.

    2009-06-01

    A phonon-coupled trap model is proposed for trap-assisted injection mechanism in silicon-oxide-nitride-oxide-silicon (SONOS)/metal-nitride-oxide-silicon (MNOS) structures at low voltages. On the basis of this model, a theory of charge injection in SONOS/MNOS has been developed. Charge injection experimental data was fitted by this theory. Obtained trap parameters are close to those previously reported [K. A. Nasyrov et al., J. Appl. Phys. 96, 4293 (2004)], where the current dependence on temperature and electric field was investigated in MNOS.

  11. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1984-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  12. Radioactive-ion-beam research at Livermore

    NASA Astrophysics Data System (ADS)

    Haight, R. C.; Mathews, G. J.; Ward, R. A.; Woosley, S. E.

    1983-06-01

    The ability to produce secondary radioactive heavy ion beams which can be isolated, focused, and transported to a secondary target can enable reaction studies and other research with the approximately more than 1300 nuclei with decay lifetimes approximately more than 1 microsec. Current research in secondary beam production and future applications in astrophysics, nuclear structure, heavy ion physics, and radiotherapy are examined as well as associated spin off and technology transfer in applied physics.

  13. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1985-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  14. Radioactive Ion Beams at INFN Laboratories

    SciTech Connect

    Calabretta, L.; Celona, L.; Chines, F.; Cosentino, L.; Cuttone, G.; Finocchiaro, P.; Maggiore, M.; Pappalardo, A.; Piazza, L.; Re, M.; Rifuggiato, D.; Rovelli, A.; Pappalardo, A.; Andrighetto, A.; Prete, G.; Biasetto, L.; Manzolaro, M.; Sarchiapone, L.; Galata, A.; Lombardi, A.

    2010-04-30

    The LNS and the LNL are the two laboratories of INFN devoted to the research on nuclear physics. Since the 1995 the LNS are involved in the design and construction of the Radioactive Ion Beam facilities called EXCYT. In the early of 2000 the LNL starts a project for second generation RIB facilities called SPES. In the 2004 at the LNS we start also the production of RIB by in flight fragmentation. Here the status and perspective of these three projects are presented.

  15. Surface modification using ionic liquid ion beams

    NASA Astrophysics Data System (ADS)

    Takaoka, Gikan H.; Hamaguchi, Takuya; Takeuchi, Mitsuaki; Ryuto, Hiromichi

    2014-12-01

    We developed an ionic liquid (IL) ion source using 1-butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) and produced IL ion beams by applying a high electric field between the tip and the extractor. Time-of-flight measurements showed that small cluster and fragment ions were contained in the positive and negative ion beams. The positive and negative cluster ions were deposited on Si(1 0 0) substrates. X-ray photoelectron spectroscopy measurements showed that the composition of the deposited layers was similar to that of an IL solvent. This suggests that a cation (A+) or an anion (B-) was attached to an IL cluster (AB)n, resulting in the formation of positive cluster ions (AB)nA+ or negative cluster ions (AB)nB-, respectively. The surfaces of the IL layers deposited on Si(1 0 0) substrates were flat at an atomic level for positive and negative cluster ion irradiation. Moreover, the contact angles of the deposited layers were similar to that of the IL solvent. Thus, surface modification of Si(1 0 0) substrates was successfully demonstrated with BMIM-PF6 cluster ion beams.

  16. Ion beam sculpting molecular scale devices

    NASA Astrophysics Data System (ADS)

    Stein, Derek Martin

    We envision solid-state nanopores at the heart of a device capable of detecting, manipulating, and ultimately sequencing individual DNA molecules. To reliably fabricate holes whose diameter is commensurate with that of the DNA molecule (˜2nm), low energy ion beams are employed to tailor the size of holes in solid-state membranes by a new technique we call "ion beam sculpting". The transmission rate of ions through the hole is monitored to provide a direct, real-time measure of the hole area that is used as a feedback signal to trigger the termination of the ion irradiation process when the desired hole size is obtained. The sensitivity of the transmitted ion count rate to atomic-scale material rearrangements at the perimeter of a hole led to a surprising discovery: Low-energy ion beams stimulate the lateral transport of matter when incident on a surface, resulting in the growth of a thin film from the boundary of a hole that closes the hole. The net flow of matter is determined by a competition between sputter erosion, which opens the hole, and a hole closing process that dominates at high temperature and low flux. The timescale for lateral matter transport under ion irradiation is surprisingly long---on the order of a second. Two physical models are proposed to account for the surprising ion-stimulated transport of matter. One model is based on the viscous flow of a stressed surface layer, while the other is based on the diffusion of mobile, ion-stimulated species at the surface of the material into the hole. The predictions of the latter are compared to ion beam sculpting experiments. We exploit ion beam sculpting to fabricate solid-state nanopores used as electronic detectors of individual DNA molecules. In ionic solution, negatively charged DNA molecules are drawn to the nanopore by an applied electrochemical potential, resulting in a detectable characteristic ionic current blockade when a molecules occludes the nanopore. The applicability of the ion sculpting

  17. Ions beams and ferroelectric plasma sources

    NASA Astrophysics Data System (ADS)

    Stepanov, Anton

    Near-perfect space-charge neutralization is required for the transverse compression of high perveance ion beams for ion-beam-driven warm dense matter experiments, such as the Neutralized Drift Compression eXperiment (NDCX). Neutralization can be accomplished by introducing a plasma in the beam path, which provides free electrons that compensate the positive space charge of the ion beam. In this thesis, charge neutralization of a 40 keV, perveance-dominated Ar+ beam by a Ferroelectric Plasma Source (FEPS) is investigated. First, the parameters of the ion beam, such as divergence due to the extraction optics, charge neutralization fraction, and emittance were measured. The ion beam was propagated through the FEPS plasma, and the effects of charge neutralization were inferred from time-resolved measurements of the transverse beam profile. In addition, the dependence of FEPS plasma parameters on the configuration of the driving pulser circuit was studied to optimize pulser design. An ion accelerator was constructed that produced a 30-50 keV Ar + beam with pulse duration <300 mus and dimensionless perveance Q up to 8 x 10-4. Transverse profile measurements 33 cm downstream of the ion source showed that the dependence of beam radius on Q was consistent with space charge expansion. It was concluded that the beam was perveance-dominated with a charge neutralization fraction of approximately zero in the absence of neutralizing plasma. Since beam expansion occurred primarily due to space charge, the decrease in effective perveance due to neutralization by FEPS plasma can be inferred from the reduction in beam radius. Results on propagation of the ion beam through FEPS plasma demonstrate that after the FEPS is triggered, the beam radius decreases to its neutralized value in about 5 mus. The duration of neutralization was about 10 mus at a charging voltage VFEPS = 5.5 kV and 35 mus at VFEPS = 6.5 kV. With VFEPS = 6.5 kV, the transverse current density profile 33 cm downstream

  18. Silicon nanowire photodetectors made by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  19. Self assembled silicon nanowire Schottky junction assisted by collagen

    NASA Astrophysics Data System (ADS)

    Stievenard, Didier; Sahli, Billel; Coffinier, Yannick; Boukherroub, Rabah; Melnyk, Oleg

    2008-03-01

    We present results on self assembled silicon nanowire Schottky junction assisted by collagen fibrous. The collagen is the principle protein of connective human tissues. It presents the double interest to be a low cost biological material with the possibility to be combed as the DNA molecule. First, the collagen was combed on OTS modified surface with gold electrodes. Second, silicon nanowires were grown on silicon substrate by CVD of silane gas (SiH4) at high temperature (500 C) using a vapor-liquid-solid (VLS) process and gold particles as catalysts. In order to increase electrostatic interaction between the collagen and the nanowires, these latters were chemically modified by mercaptopropylmethoxysilane (MPTS), then chemically oxidized. Therefore, the nanowires were transferred from their substrate into water and a drop of it deposited on the surface. Nanowires are only bound to collagen and in particular, in electrode gaps. The formation of spontaneous Schotkty junction is demonstrated by current-voltage characteristics.

  20. Grating-assisted silicon-on-insulator racetrack resonator reflector.

    PubMed

    Boeck, Robert; Caverley, Michael; Chrostowski, Lukas; Jaeger, Nicolas A F

    2015-10-05

    We experimentally demonstrate a grating-assisted silicon-on-insulator (SOI) racetrack resonator reflector with a reflect port suppression of 10.3 dB and no free spectral range. We use contra-directional grating couplers within the coupling regions of the racetrack resonator to enable suppression of all but one of the peaks within the reflect port spectrum as well as all but one of the notches within the through port spectrum.

  1. Dual Ion Beam Deposition Of Diamond Films On Optical Elements

    NASA Astrophysics Data System (ADS)

    Deutchman, Arnold H.; Partyka, Robert J.; Lewis, J. C.

    1990-01-01

    Diamond film deposition processes are of great interest because of their potential use for the formation of both protective as well as anti-reflective coatings on the surfaces of optical elements. Conventional plasma-assisted chemical vapor deposition diamond coating processes are not ideal for use on optical components because of the high processing temperatures required, and difficulties faced in nucleating films on most optical substrate materials. A unique dual ion beam deposition technique has been developed which now makes possible deposition of diamond films on a wide variety of optical elements. The new DIOND process operates at temperatures below 150 aegrees Farenheit, and has been used to nucleate and grow both diamondlike carbon and diamond films on a wide variety of optical :taterials including borosilicate glass, quartz glass, plastic, ZnS, ZnSe, Si, and Ge.

  2. Spectrometer for cluster ion beam induced luminescence

    SciTech Connect

    Ryuto, H. Sakata, A.; Takeuchi, M.; Takaoka, G. H.; Musumeci, F.

    2015-02-15

    A spectrometer to detect the ultra-weak luminescence originated by the collision of cluster ions on the surfaces of solid materials was constructed. This spectrometer consists of 11 photomultipliers with band-pass interference filters that can detect the luminescence within the wavelength ranging from 300 to 700 nm and of a photomultiplier without filter. The calibration of the detection system was performed using the photons emitted from a strontium aluminate fluorescent tape and from a high temperature tungsten filament. Preliminary measurements show the ability of this spectrometer to detect the cluster ion beam induced luminescence.

  3. Plasma formed ion beam projection lithography system

    DOEpatents

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  4. Electron Cooling of Intense Ion Beam

    SciTech Connect

    Dietrich, J.; Kamerdjiev, V.; Maier, R.; Prasuhn, D.; Stein, J.; Stockhorst, H.; Korotaev, Yu.; Meshkov, I.; Sidorin, A.; Smirnov, A.

    2006-03-20

    Results of experimental studies of the electron cooling of a proton beam at COSY (Juelich, Germany) are presented. Intensity of the proton beam is limited by two general effects: particle loss directly after the injection and development of instability in a deep cooled ion beam. Results of the instability investigations performed at COSY during last years are presented in this report in comparison with previous results from HIMAC (Chiba, Japan) CELSIUS (Uppsala, Sweden) and LEAR (CERN). Methods of the instability suppression, which allow increasing the cooled beam intensity, are described. This work is supported by RFBR grant no. 05-02-16320 and INTAS grant no. 03-54-5584.

  5. Physics with fast molecular-ion beams

    SciTech Connect

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented.

  6. Particle radiotherapy with carbon ion beams

    PubMed Central

    2013-01-01

    Carbon ion radiotherapy offers superior dose conformity in the treatment of deep-seated malignant tumours compared with conventional X-ray therapy. In addition, carbon ion beams have a higher relative biological effectiveness compared with protons or X-ray beams. The algorithm of treatment planning and beam delivery system is tailored to the individual parameters of the patient. The present article reviews the available literatures for various disease sites including the head and neck, skull base, lung, liver, prostate, bone and soft tissues and pelvic recurrence of rectal cancer as well as physical and biological properties. PMID:23497542

  7. Focused ion beam fabrication of spintronic nanostructures: an optimization of the milling process.

    PubMed

    Urbánek, M; Uhlír, V; Bábor, P; Kolíbalová, E; Hrncír, T; Spousta, J; Sikola, T

    2010-04-09

    Focused ion beam (FIB) milling has been used to fabricate magnetic nanostructures (wires, squares, discs) from single magnetic layers (Co, permalloy) and spin-valve (permalloy/Cu/Co) multilayers (thicknesses 5-50 nm) prepared by ion beam sputtering deposition. Milled surfaces of metallic thin films typically exhibit residual roughness, which is also transferred onto the edges of the milled patterns. This can lead to domain wall pinning and influence the magnetization behaviour of the nanostructures. We have investigated the milling process and the influence of the FIB parameters (incidence angle, dwell time, overlap and ion beam current) on the roughness of the milled surface. It has been found that the main reasons for increased roughness are different sputter yields for various crystallographic orientations of the grains in polycrystalline magnetic thin films. We have found that the oblique ion beam angle, long dwell time and overlap < 1 are favourable parameters for suppression of this intrinsic roughness. Finally, we have shown how to determine the ion dose necessary to mill through the whole thin film up to the silicon substrate from scanning electron microscopy (SEM) images only.

  8. Channeling technique to make nanoscale ion beams

    NASA Astrophysics Data System (ADS)

    Biryukov, V. M.; Bellucci, S.; Guidi, V.

    2005-04-01

    Particle channeling in a bent crystal lattice has led to an efficient instrument for beam steering at accelerators [Biryukov et al., Crystal Channeling and its Application at High Energy Accelerators, Springer, Berlin, 1997], demonstrated from MeV to TeV energies. In particular, crystal focusing of high-energy protons to micron size has been demonstrated at IHEP with the results well in match with Lindhard (critical angle) prediction. Channeling in crystal microstructures has been proposed as a unique source of a microbeam of high-energy particles [Bellucci et al., Phys. Rev. ST Accel. Beams 6 (2003) 033502]. Channeling in nanostructures (single-wall and multi-wall nanotubes) offers the opportunities to produce ion beams on nanoscale. Particles channeled in a nanotube (with typical diameter of about 1 nm) are trapped in two dimensions and can be steered (deflected, focused) with the efficiency similar to that of crystal channeling or better. This technique has been a subject of computer simulations, with experimental efforts under way in several high-energy labs, including IHEP. We present the theoretical outlook for making channeling-based nanoscale ion beams and report the experience with crystal-focused microscale proton beams.

  9. Graphene engineering by neon ion beams

    DOE PAGES

    Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; ...

    2016-02-18

    Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of graphenemore » based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.« less

  10. Time resolved ion beam induced charge collection

    SciTech Connect

    SEXTON,FREDERICK W.; WALSH,DAVID S.; DOYLE,BARNEY L.; DODD,PAUL E.

    2000-04-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

  11. Graphene engineering by neon ion beams

    SciTech Connect

    Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; Jesse, Stephen; Kalinin, Sergei V.; Joy, David C.; Rondinone, Adam J.; Belianinov, Alex; Ovchinnikova, Olga S.

    2016-02-18

    Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of graphene based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.

  12. Persistent ion beam induced conductivity in zinc oxide nanowires

    SciTech Connect

    Johannes, Andreas; Niepelt, Raphael; Gnauck, Martin; Ronning, Carsten

    2011-12-19

    We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.

  13. Persistent ion beam induced conductivity in zinc oxide nanowires

    NASA Astrophysics Data System (ADS)

    Johannes, Andreas; Niepelt, Raphael; Gnauck, Martin; Ronning, Carsten

    2011-12-01

    We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.

  14. Ion beam surface treatment: A new technique for thermally modifying surfaces using intense, pulsed ion beams

    SciTech Connect

    Stinnett, R.W.; Buchheit, R.G.; Neau, E.L.

    1995-08-01

    The emerging capability to produce high average power (10--300 kW) pulsed ion beams at 0.2{minus}2 MeV energies is enabling us to develop a new, commercial-scale thermal surface treatment technology called Ion Beam Surface Treatment (IBEST). This new technique uses high energy, pulsed ({le}500 ns) ion beams to directly deposit energy in the top 1--20 micrometers of the surface of any material. The depth of treatment is controllable by varying the ion energy and species. Deposition of the energy in a thin surface layer allows melft of the layer with relatively small energies (1--10J/cm2) and allows rapid cooling of the melted layer by thermal conduction into the underlying substrate. Typical cooling rates of this process (109 K/sec) are sufficient to cause amorphous layer formation and the production of non-equilibrium microstructures (nanocrystalline and metastable phases). Results from initial experiments confirm surface hardening, amorphous layer and nanocrystalline grain size formation, corrosion resistance in stainless steel and aluminum, metal surface polishing, controlled melt of ceramic surfaces, and surface cleaning and oxide layer removal as well as surface ablation and redeposition. These results follow other encouraging results obtained previously in Russia using single pulse ion beam systems. Potential commercialization of this surface treatment capability is made possible by the combination of two new technologies, a new repetitive high energy pulsed power capability (0.2{minus}2MV, 25--50 kA, 60 ns, 120 Hz) developed at SNL, and a new repetitive ion beam system developed at Cornell University.

  15. High sensitivity charge amplifier for ion beam uniformity monitor

    DOEpatents

    Johnson, Gary W.

    2001-01-01

    An ion beam uniformity monitor for very low beam currents using a high-sensitivity charge amplifier with bias compensation. The ion beam monitor is used to assess the uniformity of a raster-scanned ion beam, such as used in an ion implanter, and utilizes four Faraday cups placed in the geometric corners of the target area. Current from each cup is integrated with respect to time, thus measuring accumulated dose, or charge, in Coulombs. By comparing the dose at each corner, a qualitative assessment of ion beam uniformity is made possible. With knowledge of the relative area of the Faraday cups, the ion flux and areal dose can also be obtained.

  16. Spacecraft charging during ion beam emissions in sunlight

    NASA Technical Reports Server (NTRS)

    Lai, S. T.; Mcneil, W. J.; Aggson, T. L.

    1990-01-01

    During ion beam emissions from the SCATHA satellite, the potential of the negatively charged satellite body shows a sinusoidal oscillation frequency of once-per-spin of the satellite. The minimum occurs when the ion beam is sunward. The processes that may be responsible for the voltage modulation are considered. Neutralization of ion beam space charge by photoelectrons is examined. The photoelectrons are accelerated by the negative potential of the satellite. Effects of electron impact ionization, excitation of metastable states, and photoionization of xenon neutral atoms in the ion beam are studied in detail. Critical ionization velocity interaction is unlikely under the condition considered.

  17. Performance and Controllability of Pulsed Ion Beam Ablation Propulsion

    SciTech Connect

    Yazawa, Masaru; Buttapeng, Chainarong; Harada, Nobuhiro; Suematsu, Hisayuki; Jiang Weihua; Yatsui, Kiyoshi

    2006-05-02

    We propose novel propulsion driven by ablation plasma pressures produced by the irradiation of pulsed ion beams onto a propellant. The ion beam ablation propulsion demonstrates by a thin foil (50 {mu}mt), and the flyer velocity of 7.7 km/s at the ion beam energy density of 2 kJ/cm2 adopted by using the Time-of-flight method is observed numerically and experimentally. We estimate the performance of the ion beam ablation propulsion as specific impulse of 3600 s and impulse bit density of 1700 Ns/m2 obtained from the demonstration results. In the numerical analysis, a one-dimensional hydrodynamic model with ion beam energy depositions is used. The control of the ion beam kinetic energy is only improvement of the performance but also propellant consumption. The spacecraft driven by the ion beam ablation provides high performance efficiency with short-pulsed ion beam irradiation. The numerical results of the advanced model explained latent heat and real gas equation of state agreed well with experimental ones over a wide range of the incident ion beam energy density.

  18. Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

    NASA Astrophysics Data System (ADS)

    D'Ortenzi, L.; Monsù, R.; Cara, E.; Fretto, M.; Kara, S.; Rezvani, S. J.; Boarino, L.

    2016-10-01

    Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

  19. Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach.

    PubMed

    D'Ortenzi, L; Monsù, R; Cara, E; Fretto, M; Kara, S; Rezvani, S J; Boarino, L

    2016-12-01

    Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

  20. Formation of Luminescent Silicon Nanowires and Porous Silicon by Metal-Assisted Electroless Etching

    NASA Astrophysics Data System (ADS)

    Karbassian, F.; Mousavi, B. Kheyraddini; Rajabali, S.; Talei, R.; Mohajerzadeh, S.; Asl-Soleimani, E.

    2014-04-01

    Metal-assisted etching of silicon in HF/H2O2 aqueous solutions has been used to fabricate luminescent silicon nanowires (SiNWs) and porous silicon. The impact of the gold catalyst layer thickness and the etching solution on the morphology of the synthesized nanostructures and the diameter of the obtained nanowires were systematically investigated. Scanning electron microscopy (SEM) analyses reveal that the morphology of the fabricated structures strongly depends on the composition of the solution and the thickness of the catalyst layer. It has been observed that SiNWs are formed in solutions with H2O2 ratios (ξ) below 10 %; increasing the H2O2 concentration above this critical value leads to mesoporous (10 % < ξ < 14 %) and macroporous (14 % < ξ < 17 %) structures. Photoluminescence measurements show that SiNWs emit light at about 430 nm. Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy (TEM) analyses were utilized to determine the origin of the emission in the silicon nanostructures. TEM imaging demonstrates that SiNWs are covered by a thin layer of porous silicon, which is assumed to be responsible for their light emission.

  1. Proteome Changes in Maize Embryo (Zea mays L) Induced by Ion Beam Implantation Treatment

    NASA Astrophysics Data System (ADS)

    Li, Yongliang; Tang, Jihua; Qin, Guangyong; Huo, Yuping; Tian, Shuangqi

    2009-08-01

    Low energy ion beam implantation was applied to the maize (Zea mays L) embryo proteome using two-dimensional gel electrophoresis. Protein profile analysis detected more than 1100 protein spots, 72 of which were determined to be expressed differently in the treated and control (not exposed to ion beam implantation) embryos. Of the 72 protein spots, 53 were up-regulated in the control and 19 were more abundantly expressed in the ion beam-treated embryos. The spots of up- or down-regulated proteins were identified by matrix assisted laser desorption/ionization-time of flight mass spectrometry (MALDI-TOF-MS). Among the identified proteins, 11 were up-regulated in the treated embryos. Four of these up-regulated proteins were antioxidant molecules, three were related to stress response, two to sugar metabolism and two were associated with heat shock response. Of the five proteins up-regulated in the control embryos, three were functionally related to carbohydrate metabolism; the functions of the remaining two proteins were unknown. The data collected during this study indicate that treatment of maize embryos with low energy ion beam implantation induces changes in stress tolerance enzymes/proteins, possibly as a result of alterations in metabolism.

  2. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  3. Ion beams from laser-generated plasmas

    NASA Technical Reports Server (NTRS)

    Hughes, R. H.; Anderson, R. J.; Gray, L. G.; Rosenfeld, J. P.; Manka, C. K.; Carruth, M. R.

    1980-01-01

    The paper describes the space-charge-limited beams produced by the plasma blowoffs generated by 20-MW bursts of 1.06-micron radiation from an active Q-switched Nd:YAG laser. Laser power densities near 10 to the 11th/sq cm on solid targets generate thermalized plasma plumes which drift to a 15-kV gridded extraction gap where the ions are extracted, accelerated, and electrostatically focused; the spatially defined ion beams are then magnetically analyzed to determine the charge state content in the beams formed from carbon, aluminum, copper, and lead targets. This technique preserves time-of-flight (TOF) information in the plasma drift region, which permits plasma ion temperatures and mass flow velocities to be determined from the Maxwellian ion curve TOF shapes for the individual charge species.

  4. Tuning ferromagnetism by varying ion beam profiles

    NASA Astrophysics Data System (ADS)

    Hariwal, Rajesh V.; Malik, Hitendra K.; Asokan, K.

    2017-02-01

    Present study demonstrates a novel technique to tune the ferromagnetism at room temperature by varying the ion beam profiles from 3 to 7 mm during Carbon ion implantation in ZnO matrix and keeping other beam parameters constant. The interaction of implanted C ions with host ZnO matrix at different profiles result in variable ferromagnetism from 0.75 to 3.0  ×  10‑4 emu gm‑1 due to difference in the induced radiation pressure. Similar variation is also observed in the optical bandgap from 3.35 to 3.24 eV for different beam profiles. This study shows that the material properties can be tuned and controlled by the variation of beam profiles during the ion implantation.

  5. Kinetic Simulations of Ion Beam Neutralization

    SciTech Connect

    Chang, O.; Wang, J.

    2011-05-20

    Full particle PIC simulations are performed to study the neutralization of an ion beam in the cohesionless, mesothermal regime. Simulations further confirmed that neutralization is achieved through interactions between the trapped electrons and the potential well established by the propagation of the beam front along the beam direction and is not through plasma instabilities as previous studies suggested. In the transverse direction, the process is similar to that of the expansion of mesothermal plasma into vacuum. Parametric simulations are also performed to investigate the effects of beam radius and domain boundary condition on the neutralization process. The results suggests that, while the qualitative behavior may be similar in ground tests, quantitative parameters such as the beam potential will be affected significantly by the vacuum chamber because of the limits imposed on the expansion process by the finite chamber space.

  6. Dispensing targets for ion beam particle generators

    NASA Technical Reports Server (NTRS)

    Miller, C. G. (Inventor)

    1974-01-01

    A target for dispensing high energy protons or neutrons or ionized atoms or ionized molecules is provided which comprises a container for the target gas, which is at atmospheric or higher pressure. The container material can release the target gas in the spot where the container is heated above a predetermined temperature by the impact of an ion beam where protons or neutrons are desired, or by electrons where ionized atoms or molecules are desired. On the outside of the container, except for the region where the beam is to impact, there is deposited a layer of a metal which is imperious to gaseous diffusion. A further protective coating of a material is placed over the layer of metal, except at the region of the ion impact area in order to adsorb any unreacted gas in the vacuum in which the target is placed, to thereby prevent reduction of the high vacuum, as well as contamination of the interior of the vacuum chamber.

  7. Ion beam modification of aromatic polymers

    NASA Astrophysics Data System (ADS)

    Shukushima, Satoshi; Nishikawa, Shinya; Matsumoto, Yasuyo; Hibino, Yutaka

    1993-06-01

    We studied the optical, mechanical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H +, H 2+ and He + ions. The examined aromatic polymers were polyetherether ketone (PEEK), polyetherimide (PEI), polycther sulfon (PES), polysulfon (PSF), and polyphenylene sulfide (PPS). The optical densities at 300 nm of PES greatly increased after the irradiation. The optical densities at 400 nm of all the examined polymer linearly increased with the irradiation dose. Elongations of all the polymers at room temperature were reduced after irradiation. The PEEK film which had been irradiated with 1 MeV H + was not deformed above the melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the arematic polymers for the same absorption energy.

  8. Plasma and ion beam processing at Los Alamos

    SciTech Connect

    Rej, D.J.; Davis, H.A.; Henins, I.

    1994-07-01

    Efforts are underway at Los Alamos National Laboratory to utilize plasma and intense ion beam science and technology of the processing of advanced materials. A major theme involves surface modification of materials, e.g., etching, deposition, alloying, and implantation. In this paper, we concentrate on two programs, plasma source ion implantation and high-intensity pulsed ion beam deposition.

  9. Development of a focused ion beam micromachining system

    SciTech Connect

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  10. Funnel cone for focusing intense ion beams on a target

    SciTech Connect

    Bieniosek, F.M.; Henestroza, E.; Ni, P.

    2009-10-05

    We describe a funnel cone for concentrating an ion beam on a target. The cone utilizes the reflection characteristic of ion beams on solid walls to focus the incident beam andincrease beam intensity on target. The cone has been modeled with the TRIM code. A prototype has been tested and installed for use in the 350-keV K+ NDCX target chamber.

  11. Mapping of ion beam induced current changes in FinFETs

    SciTech Connect

    Weis, C. D.; Schuh, A.; Batra, A.; Persaud, A.; Rangelow, I. W.; Bokor, J.; Lo, C. C.; Cabrini, S.; Olynick, D.; Duhey, S.; Schenkel, T.

    2008-09-30

    We report on progress in ion placement into silicon devices with scanning probealignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 mu m and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

  12. Low-energy ion beam-based deposition of gallium nitride

    SciTech Connect

    Vasquez, M. R.; Wada, M.

    2016-02-15

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  13. Low-energy ion beam-based deposition of gallium nitride.

    PubMed

    Vasquez, M R; Wada, M

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  14. Low-energy ion beam-based deposition of gallium nitride

    NASA Astrophysics Data System (ADS)

    Vasquez, M. R.; Wada, M.

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  15. Focused ion beam lithography and anodization combined nanopore patterning.

    PubMed

    Lu, Kathy; Zhao, Jingzhong

    2010-10-01

    In this study, focused ion beam lithography and anodization are combined to create different nanopore patterns. Uniform-, alternating-, and gradient-sized shallow nanopore arrays are first made on high purity aluminum by focused ion beam lithography. These shallow pore arrays are then used as pore initiation sites during anodization by different electrolytes. Depending on the nature of the anodization electrolyte, the nanopore patterns by focused ion beam lithography play different roles in further pore development during anodization. The pore-to-pore distance by focused ion beam lithography should match with that by anodization for guided pore development to be effective. Ordered and heterogeneous nanopore arrays are obtained by the focused ion beam lithography and anodization combined approach.

  16. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  17. Atomic-scale thermocapillary flow in focused ion beam milling

    NASA Astrophysics Data System (ADS)

    Das, Kallol; Johnson, Harley; Freund, Jonathan

    2016-11-01

    Focused ion beams (FIB) offer an attractive tool for nanometer-scale manufacturing and material processing, particularly because they can be focused to a few nanometer diameter spot. This motivates their use for many applications, such as sample preparation for transmission electron microscopy (TEM), forming nanometer scale pores in thin films for DNA sequencing. Despite its widespread use, the specific mechanisms of FIB milling, especially at high ion fluxes for which significant phase change might occur, remains incompletely understood. Here we investigate the process of nanopore fabrication in thin Si films using molecular dynamics simulation where Ga+ ions are used as the focused ions. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it is driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A continuum flow model with Marangoni forcing reproduces the flow.

  18. A gas jet target for radioactive ion beam experiments

    SciTech Connect

    Chipps, K. A.; Greife, U.; Hager, U.; Sarazin, F.; Bardayan, D. W.; Pain, S. D.; Schmitt, K. T.; Smith, M. S.; Blackmon, J. C.; Linhardt, L. E.; Browne, J.; Kontos, A.; Meisel, Z.; Montes, F.; Schatz, H.; Erikson, L. E.; Lemut, A.; and others

    2013-04-19

    New radioactive ion beam (RIB) facilities, like FRIB in the US or FAIR in Europe, will push further away from stability and enable the next generation of nuclear physics experiments. Thus, the need for improved RIB targets is more crucial than ever: developments in exotic beams should coincide with developments in targets for use with those beams, in order for nuclear physics to remain on the cutting edge. Of great importance to the future of RIB physics are scattering, transfer and capture reaction measurements of rare, exotic, and unstable nuclei on light targets such as hydrogen and helium. These measurements require targets that are dense, highly localized, and pure, and conventional targets often suffer too many drawbacks to allow for such experimental designs. Targets must also accommodate the use of large area, highly-segmented silicon detector arrays, high-efficiency gamma arrays, and novel heavy ion detectors to efficiently measure the reaction products. To address this issue, the Jet Experiments in Nuclear Structure and Astrophysics (JENSA) Collaboration led by the Colorado School of Mines (CSM) is in the process of designing, building and testing a supersonic gas jet target for use at existing and future RIB facilities. The gas jet target provides a high density and high purity of target nuclei within a tightly confined region, without the use of windows or backing materials. The design also enables the use of multiple state-of-the-art detection systems.

  19. Atomic force microscope cantilever calibration using a focused ion beam.

    PubMed

    Slattery, Ashley D; Quinton, Jamie S; Gibson, Christopher T

    2012-07-20

    A calibration method is presented for determining the spring constant of atomic force microscope (AFM) cantilevers, which is a modification of the established Cleveland added mass technique. A focused ion beam (FIB) is used to remove a well-defined volume from a cantilever with known density, substantially reducing the uncertainty usually present in the added mass method. The technique can be applied to any type of AFM cantilever; but for the lowest uncertainty it is best applied to silicon cantilevers with spring constants above 0.7 N m(-1), where uncertainty is demonstrated to be typically between 7 and 10%. Despite the removal of mass from the cantilever, the calibration method presented does not impair the probes' ability to acquire data. The technique has been extensively tested in order to verify the underlying assumptions in the method. This method was compared to a number of other calibration methods and practical improvements to some of these techniques were developed, as well as important insights into the behavior of FIB modified cantilevers. These results will prove useful to research groups concerned with the application of microcantilevers to nanoscience, in particular for cases where maintaining pristine AFM tip condition is critical.

  20. Formation of Mosaic Silicon Oxide Structure during Metal-Assisted Electrochemical Etching of Silicon at High Current Density

    NASA Astrophysics Data System (ADS)

    Cao, Dao Tran; Anh, Cao Tuan; Ngan, Luong Truc Quynh

    2016-05-01

    We have used constant-current, metal-assisted electrochemical etching of silicon in HF/H2O2/ethanol electrolyte to fabricate porous silicon. We found that, at large enough current density, the sponge-like porous silicon structure is replaced by a mosaic structure, which includes islands of various shapes emerging between trenches that have been etched downward. Energy-dispersive x-ray analysis showed that the surface of the mosaic pieces was covered with silicon oxide, while little silicon oxide developed on the surface of trenches. We suggest that the appearance of the mosaic structure can be explained by the increase in the oxidation rate of silicon when the anodic current density increases, combined with no change in the dissolution rate of silicon oxide into the solution. Consequently, above a certain value of anodic current density, there is sufficient residual silicon oxide on the etched surface to create a continuous thin film. However, if the silicon oxide layer is too thick (e.g., due to too high anodic current density or too long etching time), it will become cracked (formation of mosaic pieces), likely due to differences in thermal expansion coefficient between the amorphous silicon oxide layer and crystalline silicon substrate. The oxide is cracked at locations with many defects, and the cracks reveal the silicon substrate. Therefore, at the locations where cracks occur, etching will go sideways and downward, creating trenches.

  1. Advances in mask fabrication and alignment for masked ion-beam lithography

    NASA Astrophysics Data System (ADS)

    Stumbo, David P.; Damm, George A.; Engler, D. W.; Fong, F. O.; Sen, S.; Wolfe, John C.; Randall, John N.; Mauger, Phillip E.; Shimkunas, Alex R.; Loeschne, Hans

    1990-05-01

    This paper describes recent developments in three areas ofmasked ion beam lithography (MIBL). These are 1) fabrication oflarge area, low distortion, silicon stencilmasks for demagnifying ion projection lithography, 2) fabrication ofstencil masks with nanometer scale resolution for 1:1 proximity printing, and 3) development of a direct method of alignment using the ion beam induced fluorescence of Si02. These topics are discussed below. Demagnifying ion projection masks: We describe the fabrication of stencil masks in large area, low stress (10 MPa), n-type silicon membranes. The projection masks have a silicon foil area 95 mm in diameter, thicknesses between 1.5-5 and resolution of0.6um. Measured distortion (3a) in the IPL masks ranges between 0.23gm and 0.65,um, with an experimental error of 0.20 1um. Proximity printing masks: A process is described for fabricating stencil masks with 50 nm resolution in low stress, n-type silicon membranes. Membranes less than 0.5 ,ttm thick are shown to be free of the sidewall taper that limits resolution in thicker masks. These thin membranes show a slightly flared profile due to the imperfectly collimated etching ions. Alignment: A direct method of alignment is being developed which uses the ion beam induced fluorescence of Si02 marks. Fluorescence yield is characterized as a function of ion energy and resist coating thickness. The yield for Si02 is in the range between 0.1-1.0 photons/proton, while the yields for Si, Al, and photoresist are negligibly small. Thus, a simple alignment technique can be implemented where registration of a grating in the mask with a corresponding oxide pattern is detected as a fluorescence maximum. A simple model predicts that 50 nm alignment can be accomplished, following a 1 im prealignment, in 2 seconds.

  2. Structure of the near-surface layer of NiTi on the meso- and microscale levels after ion-beam surface treatment

    SciTech Connect

    Meisner, L. L. Meisner, S. N.; Poletika, T. M. Girsova, S. L.; Tverdichlebova, A. V.; Shulepov, I. A.

    2014-11-14

    Using the EBSD, SEM and TEM methods, the structure of surface layer of polycrystalline NiTi alloy samples was examined after the modification of material surface by the pulsed action of mean-energy silicon ion beam. It was found that the ion beam treatment would cause grain fragmentation of the near-surface layer to a depth 5÷50 μm; a higher extent of fragmentation was observed in grains whose close-packed planes were oriented approximately in the same direction as the ion beam was. The effect of high-intensity ion beam treatment on the anisotropic behavior of polycrystalline NiTi alloy and the mechanisms involved were also examined.

  3. Fast ion beam-plasma interaction system.

    PubMed

    Breun, R A; Ferron, J R

    1979-07-01

    A device has been constructed for the study of the interaction between a fast ion beam and a target plasma of separately controllable parameters. The beam of either hydrogen or helium ions has an energy of 1-4 keV and a total current of 0.5-2 A. The beam energy and beam current can be varied separately. The ion source plasma is created by a pulsed (0.2-10-ms pulse length) discharge in neutral gas at up to 3 x 10(-3) Torr. The neutrals are pulsed into the source chamber, allowing the neutral pressure in the target region to remain less than 5 x 10(-5) Torr at a 2-Hz repetition rate. The creation of the source plasma can be described by a simple set of equations which predict optimum source design parameters. The target plasma is also produced by a pulsed discharge. Between the target and source chambers the beam is neutralized by electrons drawn from a set of hot filaments. Currently under study is an unstable wave in a field-free plasma excited when the beam velocity is nearly equal to the target electron thermal velocity (v(beam) approximately 3.5 x 10(7) cm/s, Te = 0.5 eV).

  4. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  5. Graphene engineering by neon ion beams

    NASA Astrophysics Data System (ADS)

    Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; Jesse, Stephen; Kalinin, Sergei V.; Joy, David C.; Rondinone, Adam J.; Belianinov, Alex; Ovchinnikova, Olga S.

    2016-03-01

    Achieving the ultimate limits of lithographic resolution and material performance necessitates engineering of matter with atomic, molecular, and mesoscale fidelity. With the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of 2D materials, such as graphene-based nanoelectronics, is coming to the forefront as a tool for fabrication and surface manipulation. However, the effects of using a Ne focused-ion-beam on the fidelity of structures created out of 2D materials have yet to be explored. Here, we will discuss the use of energetic Ne ions in engineering graphene nanostructures and explore their mechanical, electromechanical and chemical properties using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we are able to ascertain changes in the mechanical, electrical and optical properties of Ne+ beam milled graphene nanostructures and surrounding regions. Additionally, we are able to link localized defects around the milled graphene to ion milling parameters such as dwell time and number of beam passes in order to characterize the induced changes in mechanical and electromechanical properties of the graphene surface.

  6. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  7. Developments in focused ion beam metrology

    NASA Astrophysics Data System (ADS)

    Salen, Jesse A.; Athas, Gregory J.; Barnes, Drew; Bassom, Neil J.; Yansen, Don E.

    1998-09-01

    We present the ability of a focused ion beam system (FIB) to perform as an effective metrology tool. This feature is a benefit in areas where FIB technology is or can be used, or where pre-measurement cross-sectioning is required, such as the case in thin film head trimming, integrated circuit inspection, and micro-electromechanical device (MEMS) development. The FIB is a proven tool for taking high- resolution images, performing mills and depositions, and cross-sectioning samples. We demonstrate the FIB's ability to perform these tasks in a repeatable manner and take accurate measurements independently of the operator. First, we find a quantitative method for analyzing the image quality in order to remove any operator discrepancy. We show that this task can be achieved by analyzing the FIB's Modulation Transfer Function (MTF). The MTF is a proven method for measuring the quality of light optics, but has never been used as a standard in FIB imaging because sub- 100m pitch resolution targets can not easily be fabricated; however, we demonstrate a new method for obtaining the MTF. By correlating changes in FIB parameters to changes in the MTF, we have a FIB image standard, as well as an image calibration tool that is transparent to the operator. Second, we describe how current FIB software can use an automated 'measure tool' to take accurate measurements independently of the operator. We show that when using both these methods, the FIB is a repeatable metrology tool for a variety of applications.

  8. Ion beam emittance from an ECRIS

    SciTech Connect

    Spädtke, P. Lang, R.; Mäder, J.; Maimone, F.; Schlei, B. R.; Tinschert, K.; Biri, S.; Rácz, R.

    2016-02-15

    Simulation of ion beam extraction from an Electron Cyclotron Resonance Ion Source (ECRIS) is a fully 3 dimensional problem, even if the extraction geometry has cylindrical symmetry. Because of the strong magnetic flux density, not only the electrons are magnetized but also the Larmor radius of ions is much smaller than the geometrical dimension of the plasma chamber (Ø 64 × 179 mm). If we assume that the influence of collisions is small on the path of particles, we can do particle tracking through the plasma if the initial coordinates of particles are known. We generated starting coordinates of plasma ions by simulation of the plasma electrons, accelerated stochastically by the 14.5 GHz radio frequency power fed to the plasma. With that we were able to investigate the influence of different electron energies on the extracted beam. Using these assumptions, we can reproduce the experimental results obtained 10 years ago, where we monitored the beam profile with the help of viewing targets. Additionally, methods have been developed to investigate arbitrary 2D cuts of the 6D phase space. To this date, we are able to discuss full 4D information. Currently, we extend our analysis tool towards 5D and 6D, respectively.

  9. Materials processing with intense pulsed ion beams

    SciTech Connect

    Rej, D.J.; Davis, H.A.; Olson, J.C.

    1996-12-31

    We review research investigating the application of intense pulsed ion beams (IPIBs) for the surface treatment and coating of materials. The short range (0.1-10 {mu}m) and high-energy density (1-50 J/cm{sup 2}) of these short-pulsed ({le} 1 {mu}s) beams (with ion currents I = 5 - 50 kA, and energies E = 100 - 1000 keV) make them ideal to flash-heat a target surface, similar to the more familiar pulsed laser processes. IPIB surface treatment induces rapid melt and solidification at up to 10{sup 10} K/s to cause amorphous layer formation and the production of non-equilibrium microstructures. At higher energy density the target surface is vaporized, and the ablated vapor is condensed as coatings onto adjacent substrates or as nanophase powders. Progress towards the development of robust, high-repetition rate IPIB accelerators is presented along with economic estimates for the cost of ownership of this technology.

  10. Microdosimetry in ion-beam therapy

    NASA Astrophysics Data System (ADS)

    Magrin, Giulio; Mayer, Ramona

    2015-05-01

    The information of the dose is not sufficiently describing the biological effects of ions on tissue since it does not express the radiation quality, i.e. the heterogeneity of the processes due to the slowing-down and the fragmentation of the particles when crossing a target. Depending on different circumstances, the radiation quality can be determined using measurements, calculations, or simulations. Microdosimeters are the primary tools used to provide the experimental information of the radiation quality and their role is becoming crucial for the recent clinical developments in particular with carbon ion therapy. Microdosimetry is strongly linked to the biological effectiveness of the radiation since it provides the physical parameters which explicitly distinguish the radiation for its capability of damaging cells. In the framework of ion-beam therapy microdosimetry can be used in the preparation of the treatment to complement radiobiological experiments and to analyze the modification of the radiation quality in phantoms. A more ambitious goal is to perform the measurements during the irradiation procedure to determine the non-targeted radiation and, more importantly, to monitor the modification of the radiation quality inside the patient. These procedures provide the feedback of the treatment directly beneficial for the single patient but also for the characterization of the biological effectiveness in general with advantages for all future treatment. Traditional and innovative tools are currently under study and an outlook of present experience and future development is presented here.

  11. Ion beam figuring of small optical components

    NASA Astrophysics Data System (ADS)

    Drueding, Thomas W.; Fawcett, Steven C.; Wilson, Scott R.; Bifano, Thomas G.

    1995-12-01

    Ion beam figuring provides a highly deterministic method for the final precision figuring of optical components with advantages over conventional methods. The process involves bombarding a component with a stable beam of accelerated particles that selectively removes material from the surface. Figure corrections are achieved by rastering the fixed-current beam across the workplace at appropriate, time-varying velocities. Unlike conventional methods, ion figuring is a noncontact technique and thus avoids such problems as edge rolloff effects, tool wear, and force loading of the workpiece. This work is directed toward the development of the precision ion machining system at NASA's Marshall Space Flight Center. This system is designed for processing small (approximately equals 10-cm diam) optical components. Initial experiments were successful in figuring 8-cm-diam fused silica and chemical-vapor-deposited SiC samples. The experiments, procedures, and results of figuring the sample workpieces to shallow spherical, parabolic (concave and convex), and non-axially-symmetric shapes are discussed. Several difficulties and limitations encountered with the current system are discussed. The use of a 1-cm aperture for making finer corrections on optical components is also reported.

  12. Energetic Ion Beam Production by a Low-Pressure Plasma Focus Discharge

    SciTech Connect

    Lim, L. K.; Yap, S. L.; Wong, C. S.

    2011-03-30

    Energetic ion beam emissions in a 3 kJ Mather type plasma focus operating at low-pressure regime are investigated. Deuterium gas is used and the discharge is operated in a low-pressure regime of below 1 mbar. Formation of the current sheath during the breakdown phase at the back wall is assisted by a set delayed trigger pulse. Energetic and intense ion beams with good reproducibility have been obtained for the operating pressure ranging from 0.05 mbar to 0.5 mbar. Deuteron beam is determined by time resolved measurement by making use of three biased ion collectors placed at the end on direction. The average energies of deuteron beams are resolved by using time-of flight method. Correlation between the ion emissions and the current sheath dynamics is also discussed.

  13. First Results From A Multi-Ion Beam Lithography And Processing System At The University Of Florida

    SciTech Connect

    Gila, Brent; Appleton, Bill R.; Fridmann, Joel; Sanabia, Jason E.; Mazarov, Paul; Bauerdick, S.; Bruchhaus, Lars; Mimura, Ryo; Jede, Ralf

    2011-06-01

    The University of Florida (UF) have collaborated with Raith to develop a version of the Raith ionLiNE IBL system that has the capability to deliver multi-ion species in addition to the Ga ions normally available. The UF system is currently equipped with a AuSi liquid metal alloy ion source (LMAIS) and ExB filter making it capable of delivering Au and Si ions and ion clusters for ion beam processing. Other LMAIS systems could be developed in the future to deliver other ion species. This system is capable of high performance ion beam lithography, sputter profiling, maskless ion implantation, ion beam mixing, and spatial and temporal ion beam assisted writing and processing over large areas (100 mm2)--all with selected ion species at voltages from 15-40 kV and nanometer precision. We discuss the performance of the system with the AuSi LMAIS source and ExB mass separator. We report on initial results from the basic system characterization, ion beam lithography, as well as for basic ion-solid interactions.

  14. Development of the Holifield Radioactive Ion Beam Facility

    SciTech Connect

    Tatum, B.A.

    1997-08-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility`s radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. This paper details facility development to date.

  15. Development of the Holifield Radioactive Ion Beam Facility

    NASA Astrophysics Data System (ADS)

    Tatum, B. A.; Alton, G. D.; Auble, R. L.; Beene, J. R.; Dowling, D. T.; Haynes, D. L.; Juras, R. C.; Meigs, M. J.; Mills, G. D.; Mosko, S. W.; Mueller, P. E.; Olsen, D. K.; Shapira, D.; Sinclair, J. W.; Carter, H. K.; Welton, R. F.; Williams, C. E.; Bailey, J. D.; Stracener, D. W.

    1997-05-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility's radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. The HRIBF was formally dedicated on December 12, 1996, and approved for high intensity operation as a National User Facility, the first of its kind in North America. This paper describes facility development to date.

  16. Historical milestones and future prospects of cluster ion beam technology

    NASA Astrophysics Data System (ADS)

    Yamada, Isao

    2014-08-01

    Development of technology for processing of surfaces by means of gas cluster ion beams began only about a quarter century ago even though fundamental research related to generation of gas clusters began much earlier. Industrial applications of cluster ion beams did not start to be explored until commercial equipment was first introduced to the ion beam community in around 2000. The technology is now evolving rapidly with industrial equipment being engineered for many diverse surface processing applications which are made possible by the unique characteristics of cluster-ion/solid-surface interactions. In this paper, important historical milestones in cluster ion beam development are described. Present activities related to a wide range of industrial applications in semiconductors, magnetic and optical devices, and bio-medical devices are reviewed. Several emerging new advances in cluster beam applications for the future are also discussed.

  17. Use of energetic ion beams in materials synthesis and processing

    SciTech Connect

    Appleton, B R

    1991-01-01

    A brief review of the use energetic ion beams and related techniques for the synthesis, processing, and characterization of materials is presented. Selected opportunity areas are emphasized with examples, and references are provided for more extensive coverage.

  18. Biophysical models in ion beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Scholz, Michael; Elsässer, Thilo

    One major rationale for the application of heavy ion beams in tumor therapy is their increased relative biological effectiveness (RBE) in the Bragg peak region. For dose prescription, the increased effectiveness has to be taken into account in treatment planning. Hence, the complex dependencies of RBE on the dose level, biological endpoint, position in the field etc. require biophysical models, which have to fulfill two important criteria: simplicity and quantitative precision. Simplicity means that the number of free parameters should be kept at a minimum. Due to the lack of precise quantitative data, at least at present, this requirement is incompatible with approaches aiming at the molecular modeling of the whole chain of production, processing and repair of biological damages. Quantitative precision is required since steep gradients in the dose response curves are observed for most tumor and normal tissues; thus, even small uncertainties in the estimation of the biologically effective dose can transform into large uncertainties in the clinical outcome. The paper will give a general introduction into the field, followed by a description of a specific model, the so called 'Local Effect Model' (LEM). This model has been successfully applied within treatment planning in the GSI pilot project for carbon ion tumor therapy over almost 10 years now. The model is based on the knowledge of charged particle track structure in combination with the response of the cells or tissues under consideration to conventional photon radiation. The model is compared to other approaches developed for the calculation of the biological effects of high-LET radiation. Furthermore, recent improvements of the model are described. Due to the quantitative precision, besides applications in tumor therapy the LEM seems to be adequate for the calculation of stochastic radiation effects, i.e. in the framework of radiation protection. Examples for the calculation of cell transformation are

  19. Development of laser-ion beam photodissociation methods

    SciTech Connect

    Russell, D.H.

    1990-08-01

    During this report period our research efforts have concentrated on studies of the dissociation reactions of model peptides and other biologically important molecules. In addition, a considerable amount of research effort has been directed toward improving the apparatus used for laser-ion beam photodissociation. The instrumental improvements include some changes on the original apparatus, but most of this effort involved designing a second generation laser-ion beam photodissociation instrument.

  20. A preliminary model of ion beam neutralization. [in thruster plasmas

    NASA Technical Reports Server (NTRS)

    Parks, D. E.; Katz, I.

    1979-01-01

    A theoretical model of neutralized thruster ion beam plasmas has been developed. The basic premise is that the beam forms an electrostatic trap for the neutralizing electrons. A Maxwellian spectrum of electron energies is maintained by collisions between trapped electrons and by collective randomization of velocities of electrons injected from the neutralizer into the surrounding plasma. The theory contains the observed barometric law relationship between electron density and electron temperatures and ion beam spreading in good agreement with measured results.

  1. Transfer Casting From Ion-Beam-Textured Surfaces

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Sovey, J. S.

    1986-01-01

    Textured surfaces created on metals, ceramics, and polymers. Electron-bombardment ion thrustor used as neutralized-ion-beam source. Beam of directed, energetic ions alter surface chemistry and/or morphology of many materials. By adjusting ion energy and ion-beam current density impinging upon target, precise surface modifications obtained without risk of targetmaterial melting or bulk decomposition. Technique developed to generate precise, controllable, surface microstructures on metals, ceramics, and polymers.

  2. Progress toward a microsecond duration, repetitively pulsed, intense- ion beam

    SciTech Connect

    Davis, H.A.; Olson, J.C.; Reass, W.A.; Coates, D.M.; Hunt, J.W.; Schleinitz, H.M.; Lovberg, R.H.; Greenly, J.B.

    1996-07-01

    A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. We are developing a 200-250 keV, 15 kA, 1 {mu}s duration, 1-30 Hz intense ion beam accelerator to address these applications.

  3. Characterization of Si-N films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Aggarwal, M. D.; Ashok, S.; Fonash, S. J.

    1982-05-01

    Application of silicon-nitride (Si-N) as a passivant in com-pound semiconductor technology requires a low-temperature deposition process to prevent dissociation of the volatile constituents of the semiconductor. With this in mind, an exploratory study of Si-N films prepared at room temperature using low-energy, reactive ion-beam sputtering has been carried out. The electrical and optical characteristics of the films have been studied, and an annealing step is found necessary to reduce the conductivity of the nitride and im-prove the interfacial properties.

  4. Mechanical and tribological properties of ion beam-processed surfaces

    SciTech Connect

    Kodali, Padma

    1998-01-01

    The intent of this work was to broaden the applications of well-established surface modification techniques and to elucidate the various wear mechanisms that occur in sliding contact of ion-beam processed surfaces. The investigation included characterization and evaluation of coatings and modified surfaces synthesized by three surface engineering methods; namely, beam-line ion implantation, plasma-source ion implantation, and DC magnetron sputtering. Correlation among measured properties such as surface hardness, fracture toughness, and wear behavior was also examined. This dissertation focused on the following areas of research: (1) investigating the mechanical and tribological properties of mixed implantation of carbon and nitrogen into single crystal silicon by beam-line implantation; (2) characterizing the mechanical and tribological properties of diamond-like carbon (DLC) coatings processed by plasma source ion implantation; and (3) developing and evaluating metastable boron-carbon-nitrogen (BCN) compound coatings for mechanical and tribological properties. The surface hardness of a mixed carbon-nitrogen implant sample improved significantly compared to the unimplanted sample. However, the enhancement in the wear factor of this sample was found to be less significant than carbon-implanted samples. The presence of nitrogen might be responsible for the degraded wear behavior since nitrogen-implantation alone resulted in no improvement in the wear factor. DLC coatings have low friction, low wear factor, and high hardness. The fracture toughness of DLC coatings has been estimated for the first time. The wear mechanism in DLC coatings investigated with a ruby slider under a contact stress of 1 GPa was determined to be plastic deformation. The preliminary data on metastable BCN compound coatings indicated high friction, low wear factor, and high hardness.

  5. Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

    NASA Astrophysics Data System (ADS)

    Meisner, L. L.; Matveeva, V. A.; Meisner, S. N.; Matveev, A. L.

    2015-11-01

    The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ˜3400 and ˜6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

  6. Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

    SciTech Connect

    Meisner, L. L. Meisner, S. N.; Matveeva, V. A.; Matveev, A. L.

    2015-11-17

    The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ∼3400 and ∼6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

  7. Fast Ion Beam Microscopy of Whole Cells

    NASA Astrophysics Data System (ADS)

    Watt, Frank; Chen, Xiao; Chen, Ce-Belle; Udalagama, Chammika Nb; Ren, Minqin; Pastorin, G.; Bettiol, Andrew

    2013-08-01

    The way in which biological cells function is of prime importance, and the determination of such knowledge is highly dependent on probes that can extract information from within the cell. Probing deep inside the cell at high resolutions however is not easy: optical microscopy is limited by fundamental diffraction limits, electron microscopy is not able to maintain spatial resolutions inside a whole cell without slicing the cell into thin sections, and many other new and novel high resolution techniques such as atomic force microscopy (AFM) and near field scanning optical microscopy (NSOM) are essentially surface probes. In this paper we show that microscopy using fast ions has the potential to extract information from inside whole cells in a unique way. This novel fast ion probe utilises the unique characteristic of MeV ion beams, which is the ability to pass through a whole cell while maintaining high spatial resolutions. This paper first addresses the fundamental difference between several types of charged particle probes, more specifically focused beams of electrons and fast ions, as they penetrate organic material. Simulations show that whereas electrons scatter as they penetrate the sample, ions travel in a straight path and therefore maintain spatial resolutions. Also described is a preliminary experiment in which a whole cell is scanned using a low energy (45 keV) helium ion microscope, and the results compared to images obtained using a focused beam of fast (1.2 MeV) helium ions. The results demonstrate the complementarity between imaging using low energy ions, which essentially produce a high resolution image of the cell surface, and high energy ions, which produce an image of the cell interior. The characteristics of the fast ion probe appear to be ideally suited for imaging gold nanoparticles in whole cells. Using scanning transmission ion microscopy (STIM) to image the cell interior, forward scattering transmission ion microscopy (FSTIM) to improve the

  8. Bright focused ion beam sources based on laser-cooled atoms

    PubMed Central

    McClelland, J. J.; Steele, A. V.; Knuffman, B.; Twedt, K. A.; Schwarzkopf, A.; Wilson, T. M.

    2016-01-01

    Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga+ liquid metal ion source. In this review we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future. PMID:27239245

  9. Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process Technology

    NASA Astrophysics Data System (ADS)

    Yamada, Isao; Matsuo, Jiro; Toyoda, Noriaki

    2008-11-01

    Processes employing clusters of ions comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications. In 2000, a four year R&D project for development of industrial technology began in Japan under funding from the New Energy and Industrial Technology Development Organization (NEDO). Subjects of the projects are in areas of equipment development, semiconductor surface processing, high accuracy surface processing and high-quality film formation. In 2002, another major cluster ion beam project which emphasized nano-technology applications has started under a contract from the Ministry of Economy and Technology for Industry (METI). This METI project involved development related to size-selected cluster ion beam equipment and processes, and development of GCIB processes for very high rate etching and for zero damage etching of magnetic materials and compound semiconductor materials. This paper describes summery of the results.

  10. Facile fabrication of nanogap electrodes for suspended graphene characterization using direct ion beam patterning

    NASA Astrophysics Data System (ADS)

    Qi, Zhengqing John; Johnson, A. T. Charlie

    2014-03-01

    Graphene is a two-dimensional sheet of carbon atoms with exceptional electronic and mechanical properties, giving it tremendous potential in nanoelectromechanical system devices. Here, we present a method to easily and reproducibly fabricate suspended graphene nanoribbons across nanogap electrodes of various separation lengths, demonstrating a technique with aggressive gap scalability and device geometry control. Fabrication is based on using a focused gallium ion beam to create a slit between joined electrodes prepatterened on a 100 nm thick silicon nitride membrane. The transparency of the nitride membrane provides reduced ion backscattering and adds milling resolution. Large-area monolayer graphene grown by atmospheric pressure chemical vapor deposition was transferred onto the silicon nitride chip and patterned into a free-standing ribbon geometry via electron beam lithography on organic ebeam resist followed by an O2 plasma etch. We find that commonly used inorganic negative tone resist that requires a buffered oxide etch for resist removal will attack the adhesion layer (Cr2O3) between the electrode and nitride membrane, which is exposed immediately after milling, so an organic resist was selected to avoid this. Using this technique, we fabricate freestanding graphene devices contacted by electrodes of sub-100 nm separation length and preform a comparative study on the effects of current annealing on device resistance. The gap resolution of this technique is limited by the gallium ion beam, which allows for sub-100 nm gaps. Sub-10 nm gaps are feasible with He ion beams, proving direct applications in probing the high field transport properties of graphene nanoribbons at post-CMOS length scales.

  11. Ion Beam Induced Surface Modulations from Nano to Pico: Optimizing Deposition During Erosion and Erosion During Deposition.

    SciTech Connect

    MoberlyChan, W J; Schalek, R

    2007-11-08

    Ion beams of sufficient energy to erode a surface can lead to surface modulations that depend on the ion beam, the material surface it impinges, and extrinsic parameters such as temperature and geometric boundary conditions. Focused Ion Beam technology both enables site-specific placement of these modulations and expedites research through fast, high dose and small efficient use of material. The DualBeam (FIB/SEM) enables in situ metrology, with movies observing ripple formation, wave motion, and the influence of line defects. Nanostructures (ripples of >400nm wavelength to dots spaced <40nm) naturally grow from atomically flat surfaces during erosion, however, a steady state size may or may not be achieved as a consequence of numerous controlled parameters: temperature, angle, energy, crystallography. Geometric factors, which can be easily invoked using a FIB, enable a controlled component of deposition (and/or redeposition) to occur during erosion, and conversely allow a component of etching to be incurred during (ion-beam assisted) deposition. High angles of ion beam inclination commonly lead to 'rougher' surfaces, however, the extreme case of 90.0{sup o} etching enables deposition of organized structures 1000 times smaller than the aforementioned, video-recorded nanostructures. Orientation and position of these picostructures (naturally quantized by their atomic spacings) may be controlled by the same parameters as for nanostructures (e.g. ion inclination and imposed boundary conditions, which are flexibly regulated by FIB). Judicious control of angles during FIB-CVD growth stimulates erosion with directionality that produces surface modulations akin to those observed for sputtering. Just as a diamond surface roughens from 1-D ripples to 2-D steps with increasing angle of ion sputtering, so do ripples and steps appear on carbon-grown surfaces with increase in angle of FIB-CVD. Ion beam processing has been a stalwart of the microelectronics industry, is now a

  12. Microwave-assisted synthesis of biofunctional and fluorescent silicon nanoparticles using proteins as hydrophilic ligands.

    PubMed

    Zhong, Yiling; Peng, Fei; Wei, Xinpan; Zhou, Yanfeng; Wang, Jie; Jiang, Xiangxu; Su, Yuanyuan; Su, Shao; Lee, Shuit-Tong; He, Yao

    2012-08-20

    Protective shell: A microwave-assisted method allows rapid production of biofunctional and fluorescent silicon nanoparticles (SiNPs), which can be used for cell labeling. Such SiNPs feature excellent aqueous dispersibility, are strongly fluorescent, storable, photostable, stable at different pH values, and biocompatible. The method opens new avenues for designing multifunctional SiNPs and related silicon nanostructures.

  13. Electron-Cloud Effects on Heavy-Ion Beams

    SciTech Connect

    Azevedo, T; Friedman, A; Cohen, R; Vay, J

    2004-03-29

    Stray electrons can be introduced in positive-charge accelerators for heavy ion fusion (or other applications) as a result of ionization of ambient gas or gas released from walls due to halo-ion impact, or as a result of secondary-electron emission. We are developing a capability for self-consistent simulation of ion beams with the electron clouds they produce. We report on an ingredient in this capability, the effect of specified electron cloud distributions on the dynamics of a coasting ion beam. We consider here electron distributions with axially varying density, centroid location, or radial shape, and examine both random and sinusoidally varying perturbations. We find that amplitude variations are most effective in spoiling ion beam quality, though for sinusoidal variations which match the natural ion beam centroid oscillation or breathing mode frequencies, the centroid and shape perturbations can also be effective. We identify a possible instability associated with resonance with the beam-envelope ''breathing'' mode. One conclusion from this study is that heavy-ion beams are surprisingly robust to electron clouds, compared to a priori expectations.

  14. DEVELOPMENT OF EMITTANCE ANALYSIS SOFTWARE FOR ION BEAM CHARACTERIZATION

    SciTech Connect

    Padilla, M. J.; Liu, Y.

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a fi gure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally a high quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifi eld Radioactive Ion beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profi les, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fi tting are also incorporated into the software. The software will provide a simplifi ed, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate.

  15. Amending the uniformity of ion beam current density profile

    NASA Astrophysics Data System (ADS)

    Zhou, Xiaowei; Xu, Dequan; Liu, Ying; Xu, Xiangdong; Fu, Shaojun

    2008-03-01

    The uniformity of ion beam current density profile has been amended by changing the flow of the gas and making a new beam channel. The platform scanned in the horizontal orientation in this experiment, so the horizontal ion beam current distribution had hardly any effect on the etching uniformity and amending the ion beam current density profile in the vertical orientation was sufficient for the purpose of plat etching profile. The ratio of the ion source's working gas inputs has some effect for the uniformity and a ratio of 6.50sccm: 8.00sccm: 9.60sccm of the three gas inputs flow1: flow2: flow3 will lead to a more uniform profile. According to the horizontal distribution and the original vertical ion beam current density distribution measured by Faraday Cup, a new beam channel was made. The uniformity of ion beam current density profile is enhanced from +/-4.31%to +/-1.96% in this experiment.

  16. Ion Beam Neutralization Using FEAs and Mirror Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Nicolaescu, Dan; Sakai, Shigeki; Gotoh, Yasuhito; Ishikawa, Junzo

    2011-01-01

    Advanced implantation systems used for semiconductor processing require transportation of ion beams which are quasi-parallel and have low energy, such as (11B+,31P+,75As+) with energy in the range Eion = 200-1000 eV. Compensation of ion beam divergence may be obtained through electron injection and confinement in regions of non-uniform magnetic fields. Field emitter arrays with special properties are used as electron sources. The present study shows that electron confinement takes place in regions of gradient magnetic field, such as nearby analyzing, collimator and final energy magnets of the ion beam line. Modeling results have been obtained using Opera3D/Tosca/Scala. In regions of gradient magnetic field, electrons have helical trajectories which are confined like a cloud inside curved "magnetic bottles". An optimal range of positions with respect to the magnet for placing electron sources in gradient magnetic field has been shown to exist.

  17. Ohmic heated sheet for the Ca ion beam production

    SciTech Connect

    Efremov, A.; Bogomolov, S.; Kazarinov, N.; Kochagov, O.; Loginov, V.

    2008-02-15

    The production of intense accelerated {sup 48}Ca ion beams is the key problem in the experiments on the synthesis of new superheavy nuclei. For this purpose in the FLNR (JINR), an electron cyclotron resonance ion source is used at the U-400 cyclotron. The combination of a micro oven with a hot tantalum sheet inside the discharge chamber allowed the production of the intense {sup 48}Ca{sup 5+} ion beam at the {sup 48}Ca consumption of about 0.5 mg/h. In this case, the tantalum sheet is heated by microwaves and plasma electrons. The microwave power of up to 500 W is required to heat the sheet to the temperature of about 500 deg. C. To decrease the required microwave power, a new sheet with a direct Ohmic heating was designed. The present paper describes the method, technique, and preliminary experimental results on the production of the Ca ion beam.

  18. Neutralization tests on the SERT II spacecraft. [of ion beams

    NASA Technical Reports Server (NTRS)

    Kerslake, W. R.; Domitz, S.

    1979-01-01

    Orbit precession returned the SERT II spacecraft to continuous sunlight in January 1979 for the first time since early 1972, and new experiments were planned and conducted. Neutralization of an ion beam was accomplished by a second neutralizer cathode located 1 meter away. Plasma potential measurements were made of the plasma surrounding the ion beam and connecting the beam to the second neutralizer. When the density of the connecting plasma was increased by turning on the main discharge of a neighboring ion thruster, the neutralization of the ion beam occurred with improved (lower) coupling voltage. These and other tests reported should aid in the future design of spacecraft using electric thruster systems. Data taken indicate that cross neutralization of ion thrusters in a multiple thruster array should occur readily.

  19. Surface modification using low energy ground state ion beams

    NASA Technical Reports Server (NTRS)

    Chutjian, Ara (Inventor); Hecht, Michael H. (Inventor); Orient, Otto J. (Inventor)

    1990-01-01

    A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux, and energy is presented. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation. One area of application is in the manufacture of semiconductor devices from semiconductor wafers.

  20. Laser-driven shock acceleration of monoenergetic ion beams.

    PubMed

    Fiuza, F; Stockem, A; Boella, E; Fonseca, R A; Silva, L O; Haberberger, D; Tochitsky, S; Gong, C; Mori, W B; Joshi, C

    2012-11-21

    We show that monoenergetic ion beams can be accelerated by moderate Mach number collisionless, electrostatic shocks propagating in a long scale-length exponentially decaying plasma profile. Strong plasma heating and density steepening produced by an intense laser pulse near the critical density can launch such shocks that propagate in the extended plasma at high velocities. The generation of a monoenergetic ion beam is possible due to the small and constant sheath electric field associated with the slowly decreasing density profile. The conditions for the acceleration of high-quality, energetic ion beams are identified through theory and multidimensional particle-in-cell simulations. The scaling of the ion energy with laser intensity shows that it is possible to generate ~200 MeV proton beams with state-of-the-art 100 TW class laser systems.

  1. Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

    NASA Astrophysics Data System (ADS)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

    2012-02-01

    Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

  2. Low energy ion beam dynamics of NANOGAN ECR ion source

    NASA Astrophysics Data System (ADS)

    Kumar, Sarvesh; Mandal, A.

    2016-04-01

    A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

  3. EBIS charge breeder for radioactive ion beams at ATLAS.

    SciTech Connect

    Ostroumov, P.; Kondrashev, S.; Pardo, R.; Savard, G.; Vondrasek, R.; Alessi, J.; Beebe, E.; Pikin, A.

    2010-07-01

    The construction of the Californium Rare Isotope Breeder Upgrade (CARIBU) for the Argonne National Laboratory ATLAS facility is completed and its commissioning is being performed. In its full capacity, the CARIBU facility will use fission fragments from a 1 Curie (Ci) {sup 252}Cf source. The ions will be thermalized and collected into a low-energy ion beam by a helium gas catcher, mass analyzed by an isobar separator, and charge bred to higher charge states for acceleration in ATLAS. To reach energies E/A 10 MeV/u, one should inject ions with charge-to-mass ratio (q/A) {ge} 1/7 into the ATLAS linac. In the first stage, the existing Electron Cyclotron Resonance (ECR) ion source will be used as a charge breeder. The maximum intensity of radioactive ion beams at the output of the gas catcher will not exceed 10{sup 7} ions per second. A charge breeder based on an Electron Beam Ion Source (EBIS) has significant advantages over the ECR option for ion beam intensities up to about 10{sup 9} ions per second, providing 3-4 times higher efficiency and significantly better purity of highly charged radioactive ion beams for further acceleration. The proposed EBIS project for CARIBU will heavily utilize state-of-the-art EBIS technology recently developed at Brookhaven National Laboratory. This will allow us to reduce both the project cost and timescale, simultaneously insuring reliable technical realization of the cutting-edge technology. Several parameters of the CARIBU EBIS charge breeder (EBIS-CB) will be relaxed with respect to the BNL EBIS in favor of higher reliability and lower cost. Technical performance of the CARIBU charge breeder will not suffer from such a relaxation and will provide high efficiency for a whole range of radioactive ion beams. The goal of this paper is to present the initial design of the EBIS charge breeder for radioactive ion beams at ATLAS.

  4. EBIS charge breeder for radioactive ion beams at ATLAS

    NASA Astrophysics Data System (ADS)

    Ostroumov, P.; Kondrashev, S.; Pardo, R.; Savard, G.; Vondrasek, R.; Alessi, J.; Beebe, E.; Pikin, A.

    2010-07-01

    The construction of the Californium Rare Isotope Breeder Upgrade (CARIBU) for the Argonne National Laboratory ATLAS facility is completed and its commissioning is being performed. In its full capacity, the CARIBU facility will use fission fragments from a 1 Curie (Ci) 252Cf source. The ions will be thermalized and collected into a low-energy ion beam by a helium gas catcher, mass analyzed by an isobar separator, and charge bred to higher charge states for acceleration in ATLAS. To reach energies E/A 10 MeV/u, one should inject ions with charge-to-mass ratio (q/A) >= 1/7 into the ATLAS linac. In the first stage, the existing Electron Cyclotron Resonance (ECR) ion source will be used as a charge breeder. The maximum intensity of radioactive ion beams at the output of the gas catcher will not exceed 107 ions per second. A charge breeder based on an Electron Beam Ion Source (EBIS) has significant advantages over the ECR option for ion beam intensities up to about 109 ions per second, providing 3-4 times higher efficiency and significantly better purity of highly charged radioactive ion beams for further acceleration. The proposed EBIS project for CARIBU will heavily utilize state-of-the-art EBIS technology recently developed at Brookhaven National Laboratory. This will allow us to reduce both the project cost and timescale, simultaneously insuring reliable technical realization of the cutting-edge technology. Several parameters of the CARIBU EBIS charge breeder (EBIS-CB) will be relaxed with respect to the BNL EBIS in favor of higher reliability and lower cost. Technical performance of the CARIBU charge breeder will not suffer from such a relaxation and will provide high efficiency for a whole range of radioactive ion beams. The goal of this paper is to present the initial design of the EBIS charge breeder for radioactive ion beams at ATLAS.

  5. EBIS charge breeder for radioactive ion beams at ATLAS

    SciTech Connect

    Ostroumov, P.; Alessi, J.; Kondrashev, S.; Pardo, R.; Savard, G.; Vondrasek, R.; Beebe, E.; Pikin, A.

    2010-07-20

    The construction of the Californium Rare Isotope Breeder Upgrade (CARIBU) for the Argonne National Laboratory ATLAS facility is completed and its commissioning is being performed. In its full capacity, the CARIBU facility will use fission fragments from a 1 Curie (Ci) {sup 252}Cf source. The ions will be thermalized and collected into a low-energy ion beam by a helium gas catcher, mass analyzed by an isobar separator, and charge bred to higher charge states for acceleration in ATLAS. To reach energies E/A 10 MeV/u, one should inject ions with charge-to-mass ratio (q/A) {ge} 1/7 into the ATLAS linac. In the first stage, the existing Electron Cyclotron Resonance (ECR) ion source will be used as a charge breeder. The maximum intensity of radioactive ion beams at the output of the gas catcher will not exceed 10{sup 7} ions per second. A charge breeder based on an Electron Beam Ion Source (EBIS) has significant advantages over the ECR option for ion beam intensities up to about 10{sup 9} ions per second, providing 3-4 times higher efficiency and significantly better purity of highly charged radioactive ion beams for further acceleration. The proposed EBIS project for CARIBU will heavily utilize state-of-the-art EBIS technology recently developed at Brookhaven National Laboratory. This will allow us to reduce both the project cost and timescale, simultaneously insuring reliable technical realization of the cutting-edge technology. Several parameters of the CARIBU EBIS charge breeder (EBIS-CB) will be relaxed with respect to the BNL EBIS in favor of higher reliability and lower cost. Technical performance of the CARIBU charge breeder will not suffer from such a relaxation and will provide high efficiency for a whole range of radioactive ion beams. The goal of this paper is to present the initial design of the EBIS charge breeder for radioactive ion beams at ATLAS.

  6. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    PubMed Central

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-01

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures. PMID:26776569

  7. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-01

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar+) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar+-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar+-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures.

  8. Ion-beam assisted laser fabrication of sensing plasmonic nanostructures.

    PubMed

    Kuchmizhak, Aleksandr; Gurbatov, Stanislav; Vitrik, Oleg; Kulchin, Yuri; Milichko, Valentin; Makarov, Sergey; Kudryashov, Sergey

    2016-01-18

    Simple high-performance, two-stage hybrid technique was developed for fabrication of different plasmonic nanostructures, including nanorods, nanorings, as well as more complex structures on glass substrates. In this technique, a thin noble-metal film on a dielectric substrate is irradiated by a single tightly focused nanosecond laser pulse and then the modified region is slowly polished by an accelerated argon ion (Ar(+)) beam. As a result, each nanosecond laser pulse locally modifies the initial metal film through initiation of fast melting and subsequent hydrodynamic processes, while the following Ar(+)-ion polishing removes the rest of the film, revealing the hidden topography features and fabricating separate plasmonic structures on the glass substrate. We demonstrate that the shape and lateral size of the resulting functional plasmonic nanostructures depend on the laser pulse energy and metal film thickness, while subsequent Ar(+)-ion polishing enables to vary height of the resulting nanostructures. Plasmonic properties of the fabricated nanostructures were characterized by dark-field micro-spectroscopy, Raman and photoluminescence measurements performed on single nanofeatures, as well as by supporting numerical calculations of the related electromagnetic near-fields and Purcell factors. The developed simple two-stage technique represents a new step towards direct large-scale laser-induced fabrication of highly ordered arrays of complex plasmonic nanostructures.

  9. MEMS based ion beams for fusion

    NASA Astrophysics Data System (ADS)

    Persaud, A.; Seidl, P. A.; Ji, Q.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Vinayakumar, K. B.; Schaffer, Z. A.; Lal, A.

    2016-10-01

    Micro-Electro-Mechanical Systems (MEMS) fabrication provides an exciting opportunity to shrink existing accelerator concepts to smaller sizes and to reduce cost by orders of magnitude. We revisit the concept of a Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) and show how, with current technologies, the concept can be downsized from gap distances of several cm to distances in the sub-mm regime. The basic concept implements acceleration gaps using radio frequency (RF) fields and electrostatic quadrupoles (ESQ) on silicon wafers. First results from proof-of-concept experiments using printed circuit boards to realize the MEQALAC structures are presented. We show results from accelerating structures that were used in an array of nine (3x3) parallel beamlets with He ions at 15 keV. We will also present results from an ESQ focusing lattice using the same beamlet layout showing beam transport and matching. We also will discuss our progress in fabricating MEMS devices in silicon wafers for both the RF and ESQ structures and integration of necessary RF-circuits on-chip. The concept can be scaled up to thousands of beamlets providing high power beams at low cost and can be used to form and compress a plasma for the development of magnetized target fusion approaches. This work was supported by the Office of Science of the US Department of Energy through the ARPA-e ALPHA program under contracts DE-AC0205CH11231 (LBNL).

  10. Polarization Studies in Fast-Ion Beam Spectroscopy

    SciTech Connect

    Trabert, E

    2001-12-20

    In a historical review, the observations and the insight gained from polarization studies of fast ions interacting with solid targets are presented. These began with J. Macek's recognition of zero-field quantum beats in beam-foil spectroscopy as indicating alignment, and D.G. Ellis' density operator analysis that suggested the observability of orientation when using tilted foils. Lastly H. Winter's studies of the ion-beam surface interaction at grazing incidence yielded the means to produce a high degree of nuclear orientation in ion beams.

  11. Shunting arc plasma source for pure carbon ion beam.

    PubMed

    Koguchi, H; Sakakita, H; Kiyama, S; Shimada, T; Sato, Y; Hirano, Y

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA∕mm(2) at the peak of the pulse.

  12. Experimental Studies of Ion Beam Neutralization: Preliminary Results

    SciTech Connect

    Ding, N.; Polansky, J.; Downey, R.; Wang, J.

    2011-05-20

    A testing platform is designed to study ion beam neutralization in the mesothermal, collisionless region. In the experimental setup, argon neutrals were ionized in a microwave cavity and accelerated by a plasma lens system which was biased to 2500 V above the system ground. Electrons were boiled off from two hot tungsten filaments to neutralize the ion beam. The plasma is diagnosed using Langmuir probe and Faraday probe. A 3-D traversing system and a complete data acquisition loop were developed to efficiently measure 3-D beam profile. Preliminary measurements of beam profiles are presented for different operating conditions.

  13. Overview of Light-Ion Beam Therapy

    SciTech Connect

    Chu, William T.

    2006-03-16

    compared to those in conventional (photon) treatments. Wilson wrote his personal account of this pioneering work in 1997. In 1954 Cornelius Tobias and John Lawrence at the Radiation Laboratory (former E.O. Lawrence Berkeley National Laboratory) of the University of California, Berkeley performed the first therapeutic exposure of human patients to hadron (deuteron and helium ion) beams at the 184-Inch Synchrocyclotron. By 1984, or 30 years after the first proton treatment at Berkeley, programs of proton radiation treatments had opened at: University of Uppsala, Sweden, 1957; the Massachusetts General Hospital-Harvard Cyclotron Laboratory (MGH/HCL), USA, 1961; Dubna (1967), Moscow (1969) and St Petersburg (1975) in Russia; Chiba (1979) and Tsukuba (1983) in Japan; and Villigen, Switzerland, 1984. These centers used the accelerators originally constructed for nuclear physics research. The experience at these centers has confirmed the efficacy of protons and light ions in increasing the tumor dose relative to normal tissue dose, with significant improvements in local control and patient survival for several tumor sites. M.R. Raju reviewed the early clinical studies. In 1990, the Loma Linda University Medical Center in California heralded in the age of dedicated medical accelerators when it commissioned its proton therapy facility with a 250-MeV synchrotron. Since then there has been a relatively rapid increase in the number of hospital-based proton treatment centers around the world, and by 2006 there are more than a dozen commercially-built facilities in use, five new facilities under construction, and more in planning stages. In the 1950s larger synchrotrons were built in the GeV region at Brookhaven (3-GeV Cosmotron) and at Berkeley (6-GeV Bevatron), and today most of the world's largest accelerators are synchrotrons. With advances in accelerator design in the early 1970s, synchrotrons at Berkeley and Princeton accelerated ions with atomic numbers between 6 and 18, at

  14. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  15. Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification

    NASA Astrophysics Data System (ADS)

    Zhu, Didi; Ming, Liang; Huang, Meiling; Zhang, Zhaoyu; Huang, Xinming

    2014-01-01

    An approach to grain control using seed-assisted growth in directional solidification (DS) is reported in this paper. Proper multi-crystalline silicon seeds at the bottom of the crucible provided numerous fine nucleation points for the controlled grain growth in an optimized hot-zone. Low dislocation density was observed with large numbers of uniform small grains in the silicon ingot, although the grain size increased with crystal growth. Crystals produced using seed-assisted growth showed a higher and more uniform minority carrier lifetime with a much lower dislocation multiplication rate. A higher average solar cell conversion efficiency of about 0.5% in absolute value was obtained in the seed-assisted grown silicon in comparison with that in the seedless silicon under the same cell fabrication process.

  16. Quantitative carbon ion beam radiography and tomography with a flat-panel detector.

    PubMed

    Telsemeyer, Julia; Jäkel, Oliver; Martišíková, Mária

    2012-12-07

    High dose gradients are inherent to ion beam therapy. This results in high sensitivity to discrepancies between planned and delivered dose distributions. Therefore an accurate knowledge of the ion stopping power of the traversed tissue is critical. One proposed method to ensure high quality dose deposition is to measure the stopping power by ion radiography. Although the idea of imaging with highly energetic ions is more than forty years old, there is a lack of simple detectors suitable for this purpose. In this study the performance of an amorphous silicon flat-panel detector, originally designed for photon imaging, was investigated for quantitative carbon ion radiography and tomography. The flat-panel detector was exploited to measure the water equivalent thickness (WET) and water equivalent path length (WEPL) of a phantom at the Heidelberg Ion-Beam Therapy Center (HIT). To do so, the ambiguous correlation of detector signal to particle energy was overcome by active or passive variation of carbon ion beam energy and measurement of the signal-to-beam energy correlation. The active method enables one to determine the WET of the imaged object with an uncertainty of 0.5 mm WET. For tomographic WEPL measurements the passive method was exploited resulting in an accuracy of 0.01 WEPL. The developed imaging technique presents a method to measure the two-dimensional maps of WET and WEPL of phantoms with a simple and commercially available detector. High spatial resolution of 0.8 × 0.8 mm(2) is given by the detector design. In the future this powerful tool will be used to evaluate the performance of the treatment planning algorithm by studying WET uncertainties.

  17. Computer-assisted infrared spectra interpretation for amorphous silicon alloys

    NASA Astrophysics Data System (ADS)

    Kavak, Hamide; Esen, Ramazan

    2005-12-01

    A computer program for the structural interpretation of the infrared (IR) spectra is developed and tested. The interpretation of the IR spectra is made by using an hybrid system which includes library search and rule-based interpretation methods together. The computer programs were written in Pascal Codes. The prototype IR library of silicon alloys includes amorphous silicon (a-Si), amorphous silicon dioxide (a-SiOx), amorphous silicon nitride (a-Si3N4) and amorphous silicon carbide (a-SiC) references. The known spectra of these compounds were fed into the system as an unknown samples. The performance of the developed program was evaluated on a test set of 157 spectra and the percentages of successful identification ranged between 78% and 99% for different alloys.

  18. First atomic physics experiments with cooled stored ion beams at the Heidelberg heavy-ion ring TSR

    SciTech Connect

    Wolf, A.; Balykin, V.; Baumann, W.; Berger, J.; Bisoffi, G.; Blatt, P.; Blum, M.; Faulstich, A.; Friedrich, A.; Gerhard, M.; Geyer, C.; Grieser, M.; Grieser, R.; Habs, D.; Heyng, H.W.; Hochadel, B.; Holzer, B.; Huber, G.; Jaeschke, E.; Jung, M.; Karafillidis, A.; Kilgus, G.; Klein, R.; Kraemer, D.; Krause, P.; Krieg, M.; Kuehl, T.; Matl, K.; Mueller, A.; Music, M.; Neumann, R.; Neureither, G.; Ott, W.; Petrich, W.; Povh, B.; Repnow, R.; Schroeder, S.; Schuch, R.; Schwalm, D.; Sigray, P.; Steck, M.; Stokstad, R.; Szmola, E.; Wagner, M.; Wanner, B.; Welti, K.; Zwickler, S. Max-Planck-Institut fuer Kernphysik, Heidelberg Manne Siegbahn Institute , Stockholm Institut fuer Kernphysik, Universitaet Giessen, Institut fuer Physik, Universitaet Mainz Gesellschaft fuer Schwerionenforschung , Darmstadt (Fed

    1990-06-01

    An overview of atomic physics experiments at the heavy ion Test Storage Ring (TSR) is given. Highly charged ions up to fully stripped silicon have been stored at energies between 4 and 12 MeV/u. The enhancement of the beam intensity by stacking, the beam lifetime, and electron cooling of these ion beams are discussed. Radiative and state-selective dielectronic recombination rates of hydrogen-like oxygen ions with free electrons from the electron cooler were measured. Beam noise spectra are being investigated with regard to collective effects caused by the Coulomb interaction in the cold ion beams. Resonance fluorescence from stored single-charged ions was observed using tunable narrow-band lasers. First indications of laser cooling in a storage ring were seen.

  19. Microfabricated Ion Beam Drivers for Magnetized Target Fusion

    NASA Astrophysics Data System (ADS)

    Persaud, Arun; Seidl, Peter; Ji, Qing; Ardanuc, Serhan; Miller, Joseph; Lal, Amit; Schenkel, Thomas

    2015-11-01

    Efficient, low-cost drivers are important for Magnetized Target Fusion (MTF). Ion beams offer a high degree of control to deliver the required mega joules of driver energy for MTF and they can be matched to several types of magnetized fuel targets, including compact toroids and solid targets. We describe an ion beam driver approach based on the MEQALAC concept (Multiple Electrostatic Quadrupole Array Linear Accelerator) with many beamlets in an array of micro-fabricated channels. The channels consist of a lattice of electrostatic quadrupoles (ESQ) for focusing and of radio-frequency (RF) electrodes for ion acceleration. Simulations with particle-in-cell and beam envelope codes predict >10x higher current densities compared to state-of-the-art ion accelerators. This increase results from dividing the total ion beam current up into many beamlets to control space charge forces. Focusing elements can be biased taking advantage of high breakdown electric fields in sub-mm structures formed using MEMS techniques (Micro-Electro-Mechanical Systems). We will present results on ion beam transport and acceleration in MEMS based beamlets. Acknowledgments: This work is supported by the U.S. DOE under Contract No. DE-AC02-05CH11231.

  20. Spin Observables in Reactions with Radioactive Ion Beams

    SciTech Connect

    Galindo-Uribarri, Alfredo {nmn}; Urrego Blanco, Juan Pablo

    2007-01-01

    Polarization observables in nuclear reactions with exotic nuclei will provide important information concerning structural properties of nuclei and reaction mechanisms. We are currently engaged in exploring the use of polarization observables with radioactive ion beams and in the development of a polarized cryogenic target.

  1. Ultrahigh vacuum focused ion beam micromill and articles therefrom

    DOEpatents

    Lamartine, Bruce C.; Stutz, Roger A.

    1998-01-01

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are isclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters.

  2. Ion beam and plasma methods of producing diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Swec, Diane M.; Mirtich, Michael J.; Banks, Bruce A.

    1988-01-01

    A variety of plasma and ion beam techniques was employed to generate diamondlike carbon films. These methods included the use of RF sputtering, dc glow discharge, vacuum arc, plasma gun, ion beam sputtering, and both single and dual ion beam deposition. Since films were generated using a wide variety of techniques, the physico-chemical properties of these films varied considerably. In general, these films had characteristics that were desirable in a number of applications. For example, the films generated using both single and dual ion beam systems were evaluated for applications including power electronics as insulated gates and protective coatings on transmitting windows. These films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Nuclear reaction and combustion analysis indicated hydrogen to carbon ratios to be 1.00, which allowed the films to have good transmittance not only in the infrared, but also in the visible. Other evaluated properties of these films include band gap, resistivity, adherence, density, microhardness, and intrinsic stress. The results of these studies and those of the other techniques for depositing diamondlike carbon films are presented.

  3. Ion beam surface treatment: A new capability for surface enhancement

    SciTech Connect

    Stinnett, R.W.; McIntyre, D.C.; Buchheit, R.G.; Neau, E.L.; Greenly, J.B.; Thompson, M.O.; Johnston, G.P.; Rej, D.J.

    1994-07-01

    The emerging capability to produce high average power (5--350 kW) pulsed ion beams at 0.2--2 MeV energies is enabling the authors to develop a new, commercial-scale thermal surface treatment technology called Ion Beam Surface Treatment (IBEST). This new technique uses high energy, pulsed ({<=}250 ns) ion beams to directly deposit energy in the top 2--20 micrometers of the surface of any material. The depth of treatment is controllable by varying the ion energy and species. Deposition of the energy with short pulses in a thin surface layer allows melting of the layer with relatively small energies and allows rapid cooling of the melted layer by thermal diffusion into the underlying substrate. Typical cooling rates of this process (10{sup 9}--10{sup 10} K/sec) cause rapid resolidification, resulting in the production of non-equilibrium microstructures (nano-crystalline and metastable phases) that have significantly improved corrosion, wear, and hardness properties. The authors conducted IBEST feasibility experiments with results confirming surface hardening, noncrystalline grain formation, metal surface polishing, controlled melt of ceramic surfaces, and surface cleaning using pulsed ion beams.

  4. Ion beam synthesis of planar opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Polman, A.; Snoeks, E.; van den Hoven, G. N.; Brongersma, M. L.; Serna, R.; Shin, J. H.; Kik, P.; Radius, E.

    1995-12-01

    Photonic technology requires the modification and synthesis of new materials and devices for the generation, guiding, switching, multiplexing and amplification of light. This paper reviews how some of these devices may be made using ion beam synthesis. Special attention is paid to the fabrication of erbium-doped optical waveguides.

  5. Laser ion source for low charge heavy ion beams

    SciTech Connect

    Okamura,M.; Pikin, A.; Zajic, V.; Kanesue, T.; Tamura, J.

    2008-08-03

    For heavy ion inertial fusion application, a combination of a laser ion source and direct plasma injection scheme into an RFQ is proposed. The combination might provide more than 100 mA of singly charged heavy ion beam from a single laser shot. A planned feasibility test with moderate current is also discussed.

  6. Hydrodynamic Efficiency of Ablation Propulsion with Pulsed Ion Beam

    SciTech Connect

    Buttapeng, Chainarong; Yazawa, Masaru; Harada, Nobuhiro; Suematsu, Hisayuki; Jiang Weihua; Yatsui, Kiyoshi

    2006-05-02

    This paper presents the hydrodynamic efficiency of ablation plasma produced by pulsed ion beam on the basis of the ion beam-target interaction. We used a one-dimensional hydrodynamic fluid compressible to study the physics involved namely an ablation acceleration behavior and analyzed it as a rocketlike model in order to investigate its hydrodynamic variables for propulsion applications. These variables were estimated by the concept of ablation driven implosion in terms of ablated mass fraction, implosion efficiency, and hydrodynamic energy conversion. Herein, the energy conversion efficiency of 17.5% was achieved. In addition, the results show maximum energy efficiency of the ablation process (ablation efficiency) of 67% meaning the efficiency with which pulsed ion beam energy-ablation plasma conversion. The effects of ion beam energy deposition depth to hydrodynamic efficiency were briefly discussed. Further, an evaluation of propulsive force with high specific impulse of 4000s, total impulse of 34mN and momentum to energy ratio in the range of {mu}N/W was also analyzed.

  7. Drag of ballistic electrons by an ion beam

    SciTech Connect

    Gurevich, V. L.; Muradov, M. I.

    2015-12-15

    Drag of electrons of a one-dimensional ballistic nanowire by a nearby one-dimensional beam of ions is considered. We assume that the ion beam is represented by an ensemble of heavy ions of the same velocity V. The ratio of the drag current to the primary current carried by the ion beam is calculated. The drag current turns out to be a nonmonotonic function of velocity V. It has a sharp maximum for V near v{sub nF}/2, where n is the number of the uppermost electron miniband (channel) taking part in conduction and v{sub nF} is the corresponding Fermi velocity. This means that the phenomenon of ion beam drag can be used for investigation of the electron spectra of ballistic nanostructures. We note that whereas observation of the Coulomb drag between two parallel quantum wires may in general be complicated by phenomena such as tunneling and phonon drag, the Coulomb drag of electrons of a one-dimensional ballistic nanowire by an ion beam is free of such spurious effects.

  8. Applications of focused ion beam systems in gunshot residue investigation.

    PubMed

    Niewöhner, L; Wenz, H W

    1999-01-01

    Scanning ion microscopy technology has opened a new door to forensic scientists, allowing the GSR investigator to see inside a particle's core. Using a focused ion beam, particles can be cross-sectioned, revealing interior morphology and character that can be utilized for identification of the ammunition manufacturer.

  9. ECR plasma source for heavy ion beam charge neutralization

    SciTech Connect

    Efthimion, P.C.; Gilson, E.; Grisham, L.; Kolchin, P.; Davidson, E.C.; Yu, S.S.; Logan, B.G.

    2002-05-01

    Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order to focus beyond the space-charge limit. Calculations suggest that plasma at a density of 1-100 times the ion beam density and at a length {approx} 0.1-2 m would be suitable for achieving a high level of charge neutralization. An ECR source has been built at the Princeton Plasma Physics Laboratory (PPPL) to support a joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 1-10 gauss. The goal is to operate the source at pressures {approx} 10{sup -6} Torr at full ionization. The initial operation of the source has been at pressures of 10{sup -4}-10{sup -1} Torr. Electron densities in the range of 10{sup 8}-10{sup 11} cm{sup -3} have been achieved. Low-pressure operation is important to reduce ion beam ionization. A cusp magnetic field has been installed to improve radial confinement and reduce the field strength on the beam axis. In addition, axial confinement is believed to be important to achieve lower-pressure operation. To further improve breakdown at low pressure, a weak electron source will be placed near the end of the ECR source.

  10. Ultrahigh vacuum focused ion beam micromill and articles therefrom

    DOEpatents

    Lamartine, B.C.; Stutz, R.A.

    1998-02-24

    An ultrahigh vacuum focused ion beam micromilling apparatus and process are disclosed. Additionally, a durable data storage medium using the micromilling process is disclosed, the durable data storage medium capable of storing, e.g., digital or alphanumeric characters as well as graphical shapes or characters. 6 figs.

  11. Edge envelope equation for a ballistically focused neutralized ion beam

    SciTech Connect

    Lemons, D.S.; Thode, L.E.

    1980-11-01

    An envelope equation for a cold ion beam with overall charge and current neutralization provided by a coflowing electron gas obeying an adiabatic equation of state is derived. The derivation assumes the beam evolves self-similarly with the ion at the edge of a uniform density ion profile. Numerical and approximate analytical solutions are calculated.

  12. Plasma ion sources and ion beam technology inmicrofabrications

    SciTech Connect

    Ji, Lili

    2007-01-01

    For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 μm-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance (25

  13. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  14. Expansion of the radioactive ion beam program at Argonne

    NASA Astrophysics Data System (ADS)

    Clark, J. A.

    2011-01-01

    The Argonne Tandem Linear Accelerator System (ATLAS) at Argonne National Laboratory (ANL) provides a wide range of stable ion beams and radioactive beams which have contributed to our understanding of nuclear structure and reactions. Until now, most radioactive ion beams at ATLAS were produced in flight using light-ion reactions such as (p, n), (d, n), (d, p), (d,3He), and (3He,n). Within the next few months, the radioactive ion beam program at ATLAS will acquire much extended, new capabilities with the commissioning of a new facility: the CAlifornium Rare Isotope Breeder Upgrade (CARIBU). CARIBU will supply ion beams of 252Cf fission fragments, which are thermalized in a gas catcher. The singly- and doubly-charged ions extracted from the gas catcher will be mass-separated and either delivered to a low-energy experimental area, or charge bred with a modified ECR source and subsequently reaccelerated by the ATLAS facility. Properties of hundreds of these neutron-rich nuclides will be investigated using ion traps, decay stations, the newly commissioned HELical Orbit Spectrometer (HELIOS), and other available experimental equipment such as Gammasphere and the FMA. HELIOS was constructed to take advantage of rare ion beams, such as those provided by CARIBU, through light-ion transfer reactions in inverse kinematics, and represents a new approach to the study of direct reactions in inverse kinematics which avoids kinematic broadening. Experiments are currently being conducted with HELIOS, and first results with the d(28Si,p) and d(12B,p) reactions have shown excellent energy resolution.

  15. Development and Commissioning of an External Beam Facility in the Union College Ion Beam Analysis Laboratory

    NASA Astrophysics Data System (ADS)

    Yoskowitz, Joshua; Clark, Morgan; Labrake, Scott; Vineyard, Michael

    2015-10-01

    We have developed an external beam facility for the 1.1-MV tandem Pelletron accelerator in the Union College Ion Beam Analysis Laboratory. The beam is extracted from an aluminum pipe through a 1 / 4 ' ' diameter window with a 7.5- μm thick Kapton foil. This external beam facility allows us to perform ion beam analysis on samples that cannot be put under vacuum, including wet samples and samples too large to fit into the scattering chamber. We have commissioned the new facility by performing proton induced X-ray emission (PIXE) analysis of several samples of environmental interest. These include samples of artificial turf, running tracks, and a human tooth with an amalgam filling. A 1.7-MeV external proton beam was incident on the samples positioned 2 cm from the window. The resulting X-rays were measured using a silicon drift detector and were analyzed using GUPIX software to determine the concentrations of elements in the samples. The results on the human tooth indicate that while significant concentrations of Hg, Ag, and Sn are present in the amalgam filling, only trace amounts of Hg appear to have leached into the tooth. The artificial turf and running tracks show rather large concentrations of a broad range of elements and trace amounts of Pb in the turf infill.

  16. MeV ion beam lithography of biocompatible halogenated Parylenes using aperture masks

    NASA Astrophysics Data System (ADS)

    Whitlow, Harry J.; Norarat, Rattanaporn; Roccio, Marta; Jeanneret, Patrick; Guibert, Edouard; Bergamin, Maxime; Fiorucci, Gianni; Homsy, Alexandra; Laux, Edith; Keppner, Herbert; Senn, Pascal

    2015-07-01

    Parylenes are poly(p-xylylene) polymers that are widely used as moisture barriers and in biomedicine because of their good biocompatibility. We have investigated MeV ion beam lithography using 16O+ ions for writing defined patterns in Parylene-C, which is evaluated as a coating material for the Cochlear Implant (CI) electrode array, a neuroprosthesis to treat some forms of deafness. Parylene-C and -F on silicon and glass substrates as well as 50 μm thick PTFE were irradiated to different fluences (1 ×1013 - 1 ×1016 1 MeV 16O+ ions cm-2) through aperture masks under high vacuum and a low pressure (<10-3 mbar) oxygen atmosphere. Biocompatibility of the irradiated and unirradiated surfaces was tested by cell-counting to determine the proliferation of murine spiral ganglion cells. The results reveal that an oxygen ion beam can be used to pattern Parylene-C and -F without using a liquid solvent developer in a similar manner to PTFE but with a ∼25× smaller removal rate. Biocompatibility tests showed no difference in cell adhesion between irradiated and unirradiated areas or ion fluence dependence. Coating the Parylene surface with an adhesion-promoting protein mixture had a much greater effect on cell proliferation.

  17. Ion beam deposition of DLC and nitrogen doped DLC thin films for enhanced haemocompatibility on PTFE

    NASA Astrophysics Data System (ADS)

    Srinivasan, S.; Tang, Y.; Li, Y. S.; Yang, Q.; Hirose, A.

    2012-08-01

    Diamond-like carbon (DLC) and N-doped DLC (DLC:N) thin films have been synthesized on polytetrafluroethylene (PTFE) and silicon wafers using ion beam deposition. Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy and scanning electron microscopy were used to study the structural and morphological properties of the coated surface. The results show that the ion beam deposited DLC thin films exhibit high hardness and Young's modulus, low coefficient of friction and high adhesion to the substrate. Low concentration of nitrogen doping in DLC improves the mechanical properties and reduces the surface roughness. DLC coating decreases the surface energy and improves the wettability of PTFE. The platelet adhesion results show that the haemocompatibility of DLC coated PTFE, especially DLC:N coated PTFE, has been significantly enhanced as compared with uncoated PTFE. SEM observations show that the platelet reaction on the DLC and DLC:N coated PTFE was minimized as the platelets were much less aggregated and activated.

  18. Performance of MACACO Compton telescope for ion-beam therapy monitoring: first test with proton beams.

    PubMed

    Solevi, Paola; Muñoz, Enrique; Solaz, Carles; Trovato, Marco; Dendooven, Peter; Gillam, John E; Lacasta, Carlos; Oliver, Josep F; Rafecas, Magdalena; Torres-Espallardo, Irene; Llosá, Gabriela

    2016-07-21

    In order to exploit the advantages of ion-beam therapy in a clinical setting, delivery verification techniques are necessary to detect deviations from the planned treatment. Efforts are currently oriented towards the development of devices for real-time range monitoring. Among the different detector concepts proposed, Compton cameras are employed to detect prompt gammas and represent a valid candidate for real-time range verification. We present the first on-beam test of MACACO, a Compton telescope (multi-layer Compton camera) based on lanthanum bromide crystals and silicon photo-multipliers. The Compton telescope was first characterized through measurements and Monte Carlo simulations. The detector linearity was measured employing (22)Na and Am-Be sources, obtaining about 10% deviation from linearity at 3.44 MeV. A spectral image reconstruction algorithm was tested on synthetic data. Point-like sources emitting gamma rays with energy between 2 and 7 MeV were reconstructed with 3-5 mm resolution. The two-layer Compton telescope was employed to measure radiation emitted from a beam of 150 MeV protons impinging on a cylindrical PMMA target. Bragg-peak shifts were achieved via adjustment of the PMMA target location and the resulting measurements used during image reconstruction. Reconstructed Bragg peak profiles proved sufficient to observe peak-location differences within 10 mm demonstrating the potential of the MACACO Compton Telescope as a monitoring device for ion-beam therapy.

  19. Performance of MACACO Compton telescope for ion-beam therapy monitoring: first test with proton beams

    NASA Astrophysics Data System (ADS)

    Solevi, Paola; Muñoz, Enrique; Solaz, Carles; Trovato, Marco; Dendooven, Peter; Gillam, John E.; Lacasta, Carlos; Oliver, Josep F.; Rafecas, Magdalena; Torres-Espallardo, Irene; Llosá, Gabriela

    2016-07-01

    In order to exploit the advantages of ion-beam therapy in a clinical setting, delivery verification techniques are necessary to detect deviations from the planned treatment. Efforts are currently oriented towards the development of devices for real-time range monitoring. Among the different detector concepts proposed, Compton cameras are employed to detect prompt gammas and represent a valid candidate for real-time range verification. We present the first on-beam test of MACACO, a Compton telescope (multi-layer Compton camera) based on lanthanum bromide crystals and silicon photo-multipliers. The Compton telescope was first characterized through measurements and Monte Carlo simulations. The detector linearity was measured employing 22Na and Am-Be sources, obtaining about 10% deviation from linearity at 3.44 MeV. A spectral image reconstruction algorithm was tested on synthetic data. Point-like sources emitting gamma rays with energy between 2 and 7 MeV were reconstructed with 3-5 mm resolution. The two-layer Compton telescope was employed to measure radiation emitted from a beam of 150 MeV protons impinging on a cylindrical PMMA target. Bragg-peak shifts were achieved via adjustment of the PMMA target location and the resulting measurements used during image reconstruction. Reconstructed Bragg peak profiles proved sufficient to observe peak-location differences within 10 mm demonstrating the potential of the MACACO Compton Telescope as a monitoring device for ion-beam therapy.

  20. Laser-accelerated ion beam diagnostics with TOF detectors for the ELIMED beam line

    NASA Astrophysics Data System (ADS)

    Milluzzo, G.; Scuderi, V.; Amico, A. G.; Borghesi, M.; Cirrone, G. A. P.; Cuttone, G.; De Napoli, M.; Doria, D.; Dostal, J.; Larosa, G.; Leanza, R.; Margarone, D.; Petringa, G.; Pipek, J.; Romagnani, L.; Romano, F.; Schillaci, F.; Velyhan, A.

    2017-02-01

    Laser-accelerated ion beams could represent the future of particle acceleration in several multidisciplinary applications, as for instance medical physics, hadrontherapy and imaging field, being a concrete alternative to old paradigm of acceleration, characterized by huge and complex machines. In this framework, following on from the ELIMED collaboration, launched in 2012 between INFN-LNS and ELI-Beamlines, in 2014 a three-years contract has been signed between the two institutions for the design and the development of a complete transport beam-line for high-energy ion beams (up to 60 MeV) coupled with innovative diagnostics and in-air dosimetry devices. The beam-line will be installed at the ELI-Beamlines facility and will be available for users. The measurement of the beam characteristics, such as energy spectra, angular distributions and dose-rate is mandatory to optimize the transport as well as the beam delivery at the irradiation point. In order to achieve this purpose, the development of appropriate on-line diagnostics devices capable to detect high-pulsed beams with high accuracy, represents a crucial point in the ELIMED beamline development. The diagnostics solution, based on the use of silicon carbide (SiC) and diamond detectors using TOF technique, will be presented together with the preliminary results obtained with laser-accelerated proton beams.

  1. Progress in bright ion beams for industry, medicine and fusion at LBNL

    SciTech Connect

    Kwan, Joe W.

    2002-05-31

    Recent progresses at LBNL in developing ion beams for industry, radiation therapy and inertial fusion applications were discussed. The highlights include ion beam lithography, boron neutron capture therapy (BNCT), and heavy ion fusion (HIF) drivers using multiple linacs.

  2. Aerosol-Assisted Extraction of Silicon Nanoparticles from Wafer Slicing Waste for Lithium Ion Batteries

    NASA Astrophysics Data System (ADS)

    Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

    2015-03-01

    A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

  3. Aerosol-Assisted Extraction of Silicon Nanoparticles from Wafer Slicing Waste for Lithium Ion Batteries

    PubMed Central

    Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

    2015-01-01

    A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing. PMID:25819285

  4. Ion beam processing of high-temperature solid-lubricating coatings

    SciTech Connect

    Bhattacharya, R.S.; Rai, A.K.; Yust, C.S.

    1993-07-01

    Ion bean assisted deposition (IBAD) and ion beam mixing (IBM) were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF{sub 2}/CaF{sub 2}/Ag composites. In IBAD, a low energy ({approximately}500 eV) Ar{sup +} bombardment was used in combinations with electron beam evaporation of coating materials. In ion beam mixing, magnetron sputter deposition was used to deposit a mixed composite coating of CaF{sub 2} + Ag which was subsequently ion beam mixed with 1 MeV Ag{sup +} at a fluence of 1 x 10{sup 16} cm{sup {minus}2}. The deposited coatings were characterized for composition and microstructure using Rutherford back-scattering spectrometry (RBS) and transmission electron microscopy (TEM). The friction and wear tests were carried out in a high-temperature controlled-atmosphere test system utilizing pin-on-disc wear test geometry. Uncoated Si{sub 3}N{sub 4} (NBD-100) spheres were used as the pin-on coated NBD-100 Si{sub 3}N{sub 4} and Rene 41 Ni-base superalloy discs. Both IBAD and sputtering of BaF{sub 2} and CaF{sub 2} resulted in a near stoichiometric composition with a very fine microstructure. Friction coefficients below 600{degrees}C were approximately 0.2-0.3 in the case of coated Rene 41 alloy, but were reduced to about 0.1-0.15 at 800{degrees}C for coated Si{sub 3}N{sub 4}. 13 refs., 15 figs., 2 tabs.

  5. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    PubMed

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-04

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si.

  6. Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching.

    PubMed

    Liu, Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Grigoras, Kestutis; Tittonen, Ilkka

    2013-05-03

    A novel aluminum oxide (Al2O3) hard mask fabrication process with nanoscale resolution is introduced. The Al2O3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al2O3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga(+)) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al2O3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga(+) FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al2O3 mask protects the underlying silicon from Ga(+) ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated.

  7. Fracture Tests of Etched Components Using a Focused Ion Beam Machine

    NASA Technical Reports Server (NTRS)

    Kuhn, Jonathan, L.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Orloff, Jon; Powers, Edward I. (Technical Monitor)

    2000-01-01

    Many optical MEMS device designs involve large arrays of thin (0.5 to 1 micron components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture test configurations for 0.5 micron thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe. and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

  8. Fracture tests of etched components using a focused ion beam machine

    NASA Astrophysics Data System (ADS)

    Kuhn, Jonathan L.; Fettig, Rainer K.; Moseley, Samuel H., Jr.; Kutyrev, Alexander S.; Orloff, Jon

    2000-08-01

    Many optical MEMS device designs involve large arrays of thin (0.5 to 1 (mu) m) components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture tests configurations for 0.5 (mu) m thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe, and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

  9. High energy focused ion beam technology and applications at the Louisiana Accelerator Center

    NASA Astrophysics Data System (ADS)

    Glass, G. A.; Dymnikov, A. D.; Rout, B.; Zachry, D. P.

    2007-07-01

    The high energy focused ion beam (HEFIB) system at the Louisiana Accelerator Center (LAC) of the University of Louisiana at Lafayette, Lafayette, USA, is constructed on one of the beamlines of a National Electrostatics Corporation 1.7 MV 5SDH-2 tandem accelerator. The HEFIB system has several components, including a versatile magnetic quadrupole sextuplet lens focusing system defined as the Russian magnetic sextuplet (RMS) system having the same demagnifications, the same focal lengths and the same positions of the focal points in xz and yz planes as the Russian quadruplet and a one-piece concrete supporting base and integrated endstation with air isolation. A review of recent microlithography and HEFIB system developments at LAC are presented, as well as new results using heavy ion (HI) beam lithography on crystalline silicon.

  10. Electrical biasing and voltage contrast imaging in a focused ion beam system

    SciTech Connect

    Campbell, A.N.; Soden, J.M.; Rife, J.L.; Lee, R.G.

    1995-09-01

    We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of their application to the failure analysis of complex ICs. We discuss the necessary changes in system operating parameters to perform biased voltage contrast imaging.

  11. Nanoindentation on carbon thin films obtained from a C 60 ion beam

    NASA Astrophysics Data System (ADS)

    Dall'Asén, A. G.; Verdier, M.; Huck, H.; Halac, E. B.; Reinoso, M.

    2006-09-01

    Raman spectra, atomic force microscope (AFM) images, hardness ( H) and Young's modulus ( E) measurements were carried out in order to characterize carbon thin films obtained from a C 60 ion beam on silicon substrates at different deposition energies (from 100 up to 500 eV). The mechanical properties were studied via the nanoindentation technique. It has been observed by Raman spectroscopy and AFM that the microstructure presents significant changes for films deposited at energies close to 300 eV. However, these remarkable changes have not been noticeable on the mechanical properties: apparently H and E increase with higher deposition energy up to ˜11 and ˜116 GPa, respectively. These values are underestimated if the influence of the film roughness is not taken into account.

  12. Simulation of ion beam injection and extraction in an EBIS

    SciTech Connect

    Zhao, L. Kim, J. S.

    2016-02-15

    An example simulation of Au+ charge breeding using FAR-TECH’s integrated EBIS (electron beam ion source) modeling toolset is presented with the emphasis on ion beam injection and extraction. The trajectories of injected ions are calculated with PBGUNS (particle beam gun simulation) self-consistently by including the space charges from both ions and electrons. The ion beam, starting with initial conditions within the 100% acceptance of the electron beam, is then tracked by EBIS-PIC (particle-in-cell EBIS simulation code). In the trap, the evolution of the ion charge state distribution is estimated by charge state estimator. The extraction of charge bred ions is simulated with PBGUNS. The simulations of the ion injections show significant ion space charge effects on beam capture efficiency and the ionization efficiency.

  13. Progress report of the innovated KIST ion beam facility

    NASA Astrophysics Data System (ADS)

    Kim, Joonkon; Eliades, John A.; Yu, Byung-Yong; Lim, Weon Cheol; Chae, Keun Hwa; Song, Jonghan

    2017-01-01

    The Korea Institute of Science and Technology (KIST, Seoul, Republic of (S.) Korea) ion beam facility consists of three electrostatic accelerators: a 400 kV single ended ion implanter, a 2 MV tandem accelerator system and a 6 MV tandem accelerator system. The 400 kV and 6 MV systems were purchased from High Voltage Engineering Europa (HVEE, Netherlands) and commissioned in 2013, while the 2 MV system was purchased from National Electrostatics Corporation (NEC, USA) in 1995. These systems are used to provide traditional ion beam analysis (IBA), isotope ratio analysis (ex. accelerator mass spectrometry, AMS), and ion implantation/irradiation for domestic industrial and academic users. The main facility is the 6 MV HVEE Tandetron system that has an AMS line currently used for 10Be, 14C, 26Al, 36 Cl, 41Ca and 129I analyses, and three lines for IBA that are under construction. Here, these systems are introduced with their specifications and initial performance results.

  14. Alloying of metal nanoparticles by ion-beam induced sputtering

    NASA Astrophysics Data System (ADS)

    Magudapathy, P.; Srivastava, S. K.; Gangopadhyay, P.; Amirthapandian, S.; Saravanan, K.; Das, A.; Panigrahi, B. K.

    2017-01-01

    Ion-beam sputtering technique has been utilized for controlled synthesis of metal alloy nanoparticles of compositions that can be tuned. Analysis of various experimental results reveals the formation of Ag-Cu alloy nanoparticles on a silica substrate. Surface-plasmon optical resonance positions and observed shifts of Ag Bragg angles in X-ray diffraction pattern particularly confirm formation of alloy nanoparticles on glass samples. Sputtering induced nano-alloying mechanism has been discussed and compared with thermal mixing of Ag and Cu thin films on glass substrates. Compositions and sizes of alloy nanoparticles formed during ion-beam induced sputtering are found to exceed far from the values of thermal mixing.

  15. GISAXS analysis of ion beam modified films and surfaces

    NASA Astrophysics Data System (ADS)

    Buljan, Maja; Karlušić, Marko; Nekić, Nikolina; Jerčinović, Marko; Bogdanović-Radović, Iva; Bernstorff, Sigrid; Radić, Nikola; Mekterović, Igor

    2017-03-01

    Simple and efficient methods for the accurate structural characterization of ion-beam modified materials are important due to their interesting properties and many applications. Here we demonstrate the application of the Grazing incidence small angle X-ray scattering (GISAXS) method on the structural analysis of swift heavy ion-beam modified materials. Passing through a material, an accelerated ion usually modifies its surrounding causing the formation of nano-objects along its trajectory, called ion track. We show that GISAXS can be used to determine the structural properties of the nano-objects formed along the ion tracks, as well as their ordering properties. We have developed theoretical models describing GISAXS intensity distributions of the systems having different ordering types. The efficiencies of the models are tested on experimental examples.

  16. Focused Ion Beam Induced Effects on MOS Transistor Parameters

    SciTech Connect

    Abramo, Marsha T.; Antoniou, Nicholas; Campbell, Ann N.; Fleetwood, Daniel M.; Hembree, Charles E.; Jessing, Jeffrey R.; Soden, Jerry M.; Swanson, Scot E.; Tangyunyong, Paiboon; Vanderlinde, William E.

    1999-07-28

    We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

  17. Ion-beam-induced topography and surface diffusion

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.; Rossnagel, S. M.

    1982-01-01

    It is pointed out that the development of surface topography along with enhanced surface and bulk diffusion processes accompanying ion bombardment have generated growing interest among users of ion beams and plasmas for thin film or material processing. Interest in these processes stems both from attempts to generate topographic changes for specific studies or applications and from the need to suppress or control undesirable changes. The present investigation provides a summary of the current status of impurity-induced texturing, with emphasis on recent developments. Particular attention is given to the texturing accompanying deposition of an impurity material onto a solid surface while simultaneously etching the surface with an ion beam. A description of experimental considerations is provided, and a thermal-diffusion model is discussed along with the development of sputter cones, and aspects of impact-enhanced surface diffusion.

  18. Nonlinear transient neutralization theory of ion beams with dissipation

    NASA Technical Reports Server (NTRS)

    Wilhelm, H. E.

    1975-01-01

    An analytical theory of nonlinear neutralization waves generated by injection of electrons from a grid in the direction of a homogeneous ion beam of uniform velocity and infinite extension is presented. The electrons are assumed to interact with the ions through the self-consistent space charge field and by strong collective interactions. The associated nonlinear boundary-value problem is solved in closed form by means of a von Mises transformation. It is shown that the electron gas moves into the ion space in the form of a discontinuous neutralization wave. This periodic wave structure is damped out by intercomponent momentum transfer, i.e., after a few relaxation lengths a quasi-neutral beam results. The relaxation scale in space agrees with neutralization experiments of rarefied ion beams, if the collective momentum transfer between the electron and ion streams is assumed to be of the Buneman type.

  19. The influence of stray magnetic fields on ion beam neutralization

    NASA Technical Reports Server (NTRS)

    Feng, Y.-C.; Wilbur, P. J.

    1982-01-01

    An experimental investigation is described of a comparison between the ion beam neutralization characteristics of a local neutralizer (within approximately 5 cm of the beam edge) and those associated with a distant one (approximately 1 meter away from the thruster). The influence of magnetic fields in the vicinity of the neutralizer cathode orifice which are either parallel or normal to the neutralizer axis is assessed. The plasma property profiles which reflect the influence of the magnetic fields are measured. The results suggest that magnetic fields at the region of a neutralizer cathode orifice influence its ability to couple to the ion beam. They reveal that there is a potential jump from the neutralizer cathode orifice to the plasma which exists close to the orifice. This potential drop is found to increase as the axial component of magnetic flux density increases. A magnetic field perpendicular to the neutralizer axis induces a potential rise a few centimeters downstream from the neutralizer cathode.

  20. Ion Beam Analysis of Targets Used in Controlatron Neutron Generators

    SciTech Connect

    Banks, James C.; Doyle, Barney L.; Walla, Lisa A.; Walsh, David S.

    2009-03-10

    Controlatron neutron generators are used for testing neutron detection systems at Sandia National Laboratories. To provide for increased tube lifetimes for the moderate neutron flux output of these generators, metal hydride (ZrT{sub 2}) target fabrication processes have been developed. To provide for manufacturing quality control of these targets, ion beam analysis techniques are used to determine film composition. The load ratios (i.e. T/Zr concentration ratios) of ZrT{sub 2} Controlatron neutron generator targets have been successfully measured by simultaneously acquiring RBS and ERD data using a He{sup ++} beam energy of 10 MeV. Several targets were measured and the film thicknesses obtained from RBS measurements agreed within {+-}2% with Dektak profilometer measurements. The target fabrication process and ion beam analysis techniques will be presented.

  1. Focused ion beam scanning electron microscopy in biology.

    PubMed

    Kizilyaprak, C; Daraspe, J; Humbel, B M

    2014-06-01

    Since the end of the last millennium, the focused ion beam scanning electron microscopy (FIB-SEM) has progressively found use in biological research. This instrument is a scanning electron microscope (SEM) with an attached gallium ion column and the 2 beams, electrons and ions (FIB) are focused on one coincident point. The main application is the acquisition of three-dimensional data, FIB-SEM tomography. With the ion beam, some nanometres of the surface are removed and the remaining block-face is imaged with the electron beam in a repetitive manner. The instrument can also be used to cut open biological structures to get access to internal structures or to prepare thin lamella for imaging by (cryo-) transmission electron microscopy. Here, we will present an overview of the development of FIB-SEM and discuss a few points about sample preparation and imaging.

  2. Optical studies of ion-beam synthesized metal alloy nanoparticles

    NASA Astrophysics Data System (ADS)

    Magudapathy, P.; Srivatsava, S. K.; Gangopadhyay, P.; Amirthapandian, S.; Sairam, T. N.; Panigrahi, B. K.

    2015-06-01

    AuxAg1-x alloy nanoparticles with tunable surface plasmon resonance (SPR) have been synthesized on a silica glass substrate. A small Au foil on an Ag foil is irradiated as target substrates such that ion beam falls on both Ag foil and Au foils. Silica slides are kept at an angle ˜45° with respect to the metallic foils. While irradiating the metallic foils with 100 keV Ar+ ions, sputtered Au and Ag atoms get deposited on the silica-glass. In this configuration the foils have been irradiated by Ar+ ions to various fluences at room temperature and the sputtered species are collected on silica slides. Formation of AuxAg1-x nanoparticles has been confirmed from the optical absorption measurements. With respect to the exposure area of Au and Ag foils to the ion beam, the SPR peak position varies from 450 to 500 nm. Green photoluminescence has been observed from these alloy metal nanoparticles.

  3. Simulating Intense Ion Beams for Inertial Fusion Energy

    SciTech Connect

    Friedman, A.

    2001-02-20

    The Heavy Ion Fusion (HIF) program's goal is the development of the body of knowledge needed for Inertial Fusion Energy (IFE) to realize its promise. The intense ion beams that will drive HIF targets are rzonneutral plasmas and exhibit collective, nonlinear dynamics which must be understood using the kinetic models of plasma physics. This beam physics is both rich and subtle: a wide range in spatial and temporal scales is involved, and effects associated with both instabilities and non-ideal processes must be understood. Ion beams have a ''long memory,'' and initialization of a beam at mid-system with an idealized particle distribution introduces uncertainties; thus, it will be crucial to develop, and to extensively use, an integrated and detailed ''source-to-target'' HIF beam simulation capability. We begin with an overview of major issues.

  4. Simulating Intense Ion Beams for Inertial Fusion Energy

    SciTech Connect

    Friedman, A

    2001-02-20

    The Heavy Ion Fusion (HIF) program's goal is the development of the body of knowledge needed for Inertial Fusion Energy (IFE) to realize its promise. The intense ion beams that will drive HIF targets are nonneutral plasmas and exhibit collective, nonlinear dynamics which must be understood using the kinetic models of plasma physics. This beam physics is both rich and subtle: a wide range in spatial and temporal scales is involved, and effects associated with both instabilities and non-ideal processes must be understood. Ion beams have a ''long memory'', and initialization of a beam at mid-system with an idealized particle distribution introduces uncertainties; thus, it will be crucial to develop, and to extensively use, an integrated and detailed ''source-to-target'' HIF beam simulation capability. We begin with an overview of major issues.

  5. Diagnostics for ion beam driven high energy density physics experiments.

    PubMed

    Bieniosek, F M; Henestroza, E; Lidia, S; Ni, P A

    2010-10-01

    Intense beams of heavy ions are capable of heating volumetric samples of matter to high energy density. Experiments are performed on the resulting warm dense matter (WDM) at the NDCX-I ion beam accelerator. The 0.3 MeV, 30 mA K(+) beam from NDCX-I heats foil targets by combined longitudinal and transverse neutralized drift compression of the ion beam. Both the compressed and uncompressed parts of the NDCX-I beam heat targets. The exotic state of matter (WDM) in these experiments requires specialized diagnostic techniques. We have developed a target chamber and fielded target diagnostics including a fast multichannel optical pyrometer, optical streak camera, laser Doppler-shift interferometer (Velocity Interferometer System for Any Reflector), beam transmission diagnostics, and high-speed gated cameras. We also present plans and opportunities for diagnostic development and a new target chamber for NDCX-II.

  6. Pierce instability in neutralized inertial confinement fusion ion beams

    SciTech Connect

    Lemons, D.S.; Cary, J.R.

    1982-06-01

    The stability of a charge and current neutralized electron-ion beam propagating between two planar boundaries is investigated. For equipotential boundaries the beam is, as originally shown by Pierce, electrostatically unstable for electron current densities above a certain limiting value. If, however, the electric field at the upstream boundary is required to vanish, there is no instability. An intermediate case, in which the two boundaries are electrically connected with a finite conductivity plasma, corresponds to the proposed use of neutralized light and heavy ion beams for inertial confinement fusion drivers. Results indicate such beams can propagate either stably or with zero-frequency Pierce instability growth rates which are probably insignificant. lectric currents; boundary conditions; current density; electric fields; plasma;

  7. Reactive ion beam deposition of aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Bhat, S.; Ashok, S.; Fonash, S. J.; Tongson}, L.

    1985-07-01

    Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

  8. Maskless micro-ion-beam reduction lithography system

    DOEpatents

    Leung, Ka-Ngo; Barletta, William A.; Patterson, David O.; Gough, Richard A.

    2005-05-03

    A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

  9. Drift compression of an intense neutralized ion beam

    SciTech Connect

    Roy, P.K.; Yu, S.S.; Henestroza, E.; Anders, A.; Bieniosek, F.M.; Coleman, J.; Eylon, S.; Greenway, W.G.; Leitner, M.; Logan, B.G.; Waldron, W.L.; Welch, D.R.; Thoma, C.; Sefkow, A.B.; Gilson, E.P.; Efthimion, P.C.; Davidson, R.C.

    2004-10-25

    Longitudinal compression of a tailored-velocity, intense neutralized ion beam has been demonstrated. The compression takes place in a 1-2 m drift section filled with plasma to provide space-charge neutralization. An induction cell produces a head-to-tail velocity ramp that longitudinally compresses the neutralized beam, enhancing the beam peak current by a factor of 50 and producing a pulse duration of about 3 ns. this measurement has been confirmed independently with two different diagnostic systems.

  10. Is Prostate Cancer a Good Candidate for Ion Beam Therapy?

    NASA Astrophysics Data System (ADS)

    Rossi, Carl J.

    Organ-confined prostate cancer now constitutes one of the most commonly treated malignancies with ion beam therapy (IBT). Because of this, questions have been raised regarding the efficacy and cost-effectiveness of such treatment. This chapter details the clinical results obtained with both proton and carbon ion therapy, discusses ongoing clinical trials, and seeks to place IBT in the context of other technological evolutions in radiation oncology.

  11. Electrostatic ion beam trap for electron collision studies

    SciTech Connect

    Heber, O.; Witte, P.D.; Diner, A.; Bhushan, K.G.; Strasser, D.; Toker, Y.; Rappaport, M.L.; Ben-Itzhak, I.; Altstein, N.; Schwalm, D.; Wolf, A.; Zajfman, D.

    2005-01-01

    We describe a system combining an ion beam trap and a low energy electron target in which the interaction between electrons and vibrationally cold molecular ions and clusters can be studied. The entire system uses only electrostatic fields for both trapping and focusing, thus being able to store particles without a mass limit. Preliminary results for the electron impact neutralization of C{sub 2}{sup -} ions and aluminum clusters are presented.

  12. A microsecond-pulsewidth, intense, light-ion beam accelerator

    SciTech Connect

    Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Greenly, J.B.; Waganaar, W.J.

    1993-07-01

    A relatively long-pulsewidth (0.1-1 {mu}s) intense ion beam accelerator has been built for materials processing applications. An applied-B{sub r}, magnetically-insulated extraction ion diode with dielectric flashover ion source is installed directly onto the output of a 1.2-MV, 300-kJ Marx generator. Initial operation of the accelerator at 0.4 MV indicates satisfactory performance without the need for additional pulse-shaping.

  13. Focused ion beams using a high-brightness plasma source

    NASA Astrophysics Data System (ADS)

    Guharay, Samar

    2002-10-01

    High-brightness ion beams, with low energy spread, have merits for many new applications in microelectronics, materials science, and biology. Negative ions are especially attractive for the applications that involve beam-solid interactions. When negative ions strike a surface, especially an electrically isolated surface, the surface charging voltage is limited to few volts [1]. This property can be effectively utilized to circumvent problems due to surface charging, such as device damage and beam defocusing. A compact plasma source, with the capability to deliver either positive or negative ion beams, has been developed. H- beams from this pulsed source showed brightness within an order of magnitude of the value for beams from liquid-metal ion sources. The beam angular intensity is > 40 mAsr-1 and the corresponding energy spread is <2.5 eV [2]. Using a simple Einzel lens with magnification of about 0.1, a focused current density of about 40 mAcm-2 is obtained. It is estimated that an additional magnification of about 0.1 can yield a focused current density of > 1 Acm-2 and a spot size of 100 nm. Such characteristics of focused beam parameters, using a dc source, will immediately open up a large area of new applications. [1] P. N. Guzdar, A. S. Sharma, S. K. Guharay, "Charging of substrates irradiated by particle beams" Appl. Phys. Lett. 71, 3302 (1997). [2] S. K. Guharay, E. Sokolovsky, J. Orloff, "Characteristics of ion beams from a Penning source for focused ion beam applications" J. Vac. Sci Technol. B17, 2779 (1999).

  14. Production of highly charged ion beams with SECRAL.

    PubMed

    Sun, L T; Zhao, H W; Lu, W; Zhang, X Z; Feng, Y C; Li, J Y; Cao, Y; Guo, X H; Ma, H Y; Zhao, H Y; Shang, Y; Ma, B H; Wang, H; Li, X X; Jin, T; Xie, D Z

    2010-02-01

    Superconducting electron cyclotron resonance ion source with advanced design in Lanzhou (SECRAL) is an all-superconducting-magnet electron cyclotron resonance ion source (ECRIS) for the production of intense highly charged ion beams to meet the requirements of the Heavy Ion Research Facility in Lanzhou (HIRFL). To further enhance the performance of SECRAL, an aluminum chamber has been installed inside a 1.5 mm thick Ta liner used for the reduction of x-ray irradiation at the high voltage insulator. With double-frequency (18+14.5 GHz) heating and at maximum total microwave power of 2.0 kW, SECRAL has successfully produced quite a few very highly charged Xe ion beams, such as 10 e microA of Xe(37+), 1 e microA of Xe(43+), and 0.16 e microA of Ne-like Xe(44+). To further explore the capability of the SECRAL in the production of highly charged heavy metal ion beams, a first test run on bismuth has been carried out recently. The main goal is to produce an intense Bi(31+) beam for HIRFL accelerator and to have a feel how well the SECRAL can do in the production of very highly charged Bi beams. During the test, though at microwave power less than 3 kW, more than 150 e microA of Bi(31+), 22 e microA of Bi(41+), and 1.5 e microA of Bi(50+) have been produced. All of these results have again demonstrated the great capability of the SECRAL source. This article will present the detailed results and brief discussions to the production of highly charged ion beams with SECRAL.

  15. Intense ion beam optimization and characterization with thermal imaging

    SciTech Connect

    Davis, H.A.; Bartsch, R.R.; Rej, D.J.; Waganaar, W.J.

    1994-08-01

    The authors have developed thermal imaging of beam targets to optimize and characterize intense ion beams. The technique, which measures the beam energy-density distribution on each machine firing, has been used to rapidly develop and characterize two very different beams--a 400 kV beam used to study materials processing, and an 80 kV beam use for magnetic fusion diagnostics.

  16. Ion beam analysis of diffusion in heterogeneous materials

    NASA Astrophysics Data System (ADS)

    Clough, A. S.; Jenneson, P. M.

    1998-04-01

    Ion-beam analysis has been applied to a variety of problems involving diffusion in heterogeneous materials. An energy loss technique has been used to study both the diffusion of water and the surface segregation of fluoropolymers in polymeric matrices. A scanning micro-beam technique has been developed to allow water concentrations in hydrophilic polymers and cements to be measured together with associated solute elements. It has also been applied to the diffusion of shampoo into hair.

  17. Method and apparatus for efficient photodetachment and purification of negative ion beams

    DOEpatents

    Beene, James R [Oak Ridge, TN; Liu, Yuan [Knoxville, TN; Havener, Charles C [Knoxville, TN

    2008-02-26

    Methods and apparatus are described for efficient photodetachment and purification of negative ion beams. A method of purifying an ion beam includes: inputting the ion beam into a gas-filled multipole ion guide, the ion beam including a plurality of ions; increasing a laser-ion interaction time by collisional cooling the plurality of ions using the gas-filled multipole ion guide, the plurality of ions including at least one contaminant; and suppressing the at least one contaminant by selectively removing the at least one contaminant from the ion beam by electron photodetaching at least a portion of the at least one contaminant using a laser beam.

  18. Study on space charge compensation in negative hydrogen ion beam

    SciTech Connect

    Zhang, A. L.; Chen, J. E.; Peng, S. X. Ren, H. T.; Zhang, T.; Zhang, J. F.; Xu, Y.; Guo, Z. Y.

    2016-02-15

    Negative hydrogen ion beam can be compensated by the trapping of ions into the beam potential. When the beam propagates through a neutral gas, these ions arise due to gas ionization by the beam ions. However, the high neutral gas pressure may cause serious negative hydrogen ion beam loss, while low neutral gas pressure may lead to ion-ion instability and decompensation. To better understand the space charge compensation processes within a negative hydrogen beam, experimental study and numerical simulation were carried out at Peking University (PKU). The simulation code for negative hydrogen ion beam is improved from a 2D particle-in-cell-Monte Carlo collision code which has been successfully applied to H{sup +} beam compensated with Ar gas. Impacts among ions, electrons, and neutral gases in negative hydrogen beam compensation processes are carefully treated. The results of the beam simulations were compared with current and emittance measurements of an H{sup −} beam from a 2.45 GHz microwave driven H{sup −} ion source in PKU. Compensation gas was injected directly into the beam transport region to modify the space charge compensation degree. The experimental results were in good agreement with the simulation results.

  19. Intense ion beam neutralization using underdense background plasma

    SciTech Connect

    Berdanier, William; Roy, Prabir K.; Kaganovich, Igor

    2015-01-15

    Producing an overdense background plasma for neutralization purposes with a density that is high compared to the beam density is not always experimentally possible. We show that even an underdense background plasma with a small relative density can achieve high neutralization of intense ion beam pulses. Using particle-in-cell simulations, we show that if the total plasma electron charge is not sufficient to neutralize the beam charge, electron emitters are necessary for effective neutralization but are not needed if the plasma volume is so large that the total available charge in the electrons exceeds that of the ion beam. Several regimes of possible underdense/tenuous neutralization plasma densities are investigated with and without electron emitters or dense plasma at periphery regions, including the case of electron emitters without plasma, which does not effectively neutralize the beam. Over 95% neutralization is achieved for even very underdense background plasma with plasma density 1/15th the beam density. We compare results of particle-in-cell simulations with an analytic model of neutralization and find close agreement with the particle-in-cell simulations. Further, we show experimental data from the National Drift Compression experiment-II group that verifies the result that underdense plasma can neutralize intense heavy ion beams effectively.

  20. Dense Metal Plasma in a Solenoid for Ion Beam Neutralization

    SciTech Connect

    Anders, Andre; Kauffeldt, Marina; Oks, Efim M.; Roy, Prabir K.

    2010-10-30

    Space-charge neutralization is required to compress and focus a pulsed, high-current ion beam on a target for warm dense matter physics or heavy ion fusion experiments. We described approaches to produce dense plasma in and near the final focusing solenoid through which the ion beam travels, thereby providing an opportunity for the beam to acquire the necessary space-charge compensating electrons. Among the options are plasma injection from pulsed vacuum arc sources located outside the solenoid, and using a high current (> 4 kA) pulsed vacuum arc plasma from a ring cathode near the edge of the solenoid. The plasma distribution is characterized by photographic means, by an array of movable Langmuir probes, by a small single probe, and by evaluating Stark broadening of the Balmer H beta spectral line. In the main approach described here, the plasma is produced at several cathode spots distributed azimuthally on the ring cathode. It is shown that the plasma is essentially hollow, as determined by the structure of the magnetic field, though the plasma density exceeds 1014 cm-3 in practically all zones of the solenoid volume if the ring electrode is placed a few centimeters off the center of the solenoid. The plasma is non-uniform and fluctuating, however, since its density exceeds the ion beam density it is believed that this approach could provide a practical solution to the space charge neutralization challenge.

  1. Algorithm for ion beam figuring of low-gradient mirrors.

    PubMed

    Jiao, Changjun; Li, Shengyi; Xie, Xuhui

    2009-07-20

    Ion beam figuring technology for low-gradient mirrors is discussed. Ion beam figuring is a noncontact machining technique in which a beam of high-energy ions is directed toward a target workpiece to remove material in a predetermined and controlled fashion. Owing to this noncontact mode of material removal, problems associated with tool wear and edge effects, which are common in conventional contact polishing processes, are avoided. Based on the Bayesian principle, an iterative dwell time algorithm for planar mirrors is deduced from the computer-controlled optical surfacing (CCOS) principle. With the properties of the removal function, the shaping process of low-gradient mirrors can be approximated by the linear model for planar mirrors. With these discussions, the error surface figuring technology for low-gradient mirrors with a linear path is set up. With the near-Gaussian property of the removal function, the figuring process with a spiral path can be described by the conventional linear CCOS principle, and a Bayesian-based iterative algorithm can be used to deconvolute the dwell time. Moreover, the selection criterion of the spiral parameter is given. Ion beam figuring technology with a spiral scan path based on these methods can be used to figure mirrors with non-axis-symmetrical errors. Experiments on SiC chemical vapor deposition planar and Zerodur paraboloid samples are made, and the final surface errors are all below 1/100 lambda.

  2. Nuclear astrophysics at the Holifield Radioactive Ion Beam Facility

    NASA Astrophysics Data System (ADS)

    Blackmon, Jeff C.

    1996-01-01

    Reactions involving radioactive nuclei play an important role in explosive stellar events such as novae, supernovae, and X-ray bursts. The development of accelerated, proton-rich radioactive ion beams provides a tool for directly studying many of the reactions that fuel explosive hydrogen burning. The experimental nuclear astrophysics program at the Holifield Radioactive Ion Beam Facility at Oak Ridge National Laboratory is centered on absolute cross section measurements of these reactions with radioactive ion beams. Beams of F-17 and F-18, important nuclei in the hot-CNO cycle, are currently under development at HRIBF. Progress in the production of intense radioactive fluorine beams is reported. The Daresbury Recoil Separator (DRS) has been installed at HRIBF as the primary experimental station for nuclear astrophysics experiments. The DRS will be used to measure reactions in inverse kinematics with the techniques of direct recoil detection, delayed-activity recoil detection, and recoil-gamma coincidence measurements. The first astrophysics experiments to be performed at HRIBF, mA the application of the recoil separator in these measurements, are discussed.

  3. Nano-scale processes behind ion-beam cancer therapy

    NASA Astrophysics Data System (ADS)

    Surdutovich, Eugene; Garcia, Gustavo; Mason, Nigel; Solov'yov, Andrey V.

    2016-04-01

    This topical issue collates a series of papers based on new data reported at the third Nano-IBCT Conference of the COST Action MP1002: Nanoscale Insights into Ion Beam Cancer Therapy, held in Boppard, Germany, from October 27th to October 31st, 2014. The Nano-IBCT COST Action was launched in December 2010 and brought together more than 300 experts from different disciplines (physics, chemistry, biology) with specialists in radiation damage of biological matter from hadron-therapy centres, and medical institutions. This meeting followed the first and the second conferences of the Action held in October 2011 in Caen, France and in May 2013 in Sopot, Poland respectively. This conference series provided a focus for the European research community and has highlighted the pioneering research into the fundamental processes underpinning ion beam cancer therapy. Contribution to the Topical Issue "COST Action Nano-IBCT: Nano-scale Processes Behind Ion-Beam Cancer Therapy", edited by Andrey V. Solov'yov, Nigel Mason, Gustavo Garcia and Eugene Surdutovich.

  4. Ribbon Ion Beam with Controlled Directionality and Local Reactive Chemistry

    NASA Astrophysics Data System (ADS)

    Biloiu, Costel; Gilchrist, Glen; Kontos, Alex; Basame, Solomon; Rockwell, Tyler; Campbell, Chris; Daniels, Kevin; Allen, Ernest; Wallace, Jay; Ballou, Jon; Hertel, Richard; Chen, Tsung-Liang; Liang, Shurong; Singh, Vikram

    2016-09-01

    A plasma processing technology designed for etch of 3D semiconductor structures is presented. The technology is characterized by controllable ion directionality and local reactive chemistry and it is based on proprietary Applied Materials - Varian Semiconductor Equipment ribbon ion beam architecture. It uses a combination of inert gas ion beam and injection of reactive chemical species at the Point-of-Use (PoU), i.e., at the wafer surface. The ion source uses an inductively coupled plasma source and a diode-type extraction optics. A beam shaping electrode allows extraction of two symmetrical ribbon-like beamlets. The ion beam has in situ controllable ion angular distribution in both mean angle and angular spread. The beam has a uniform distribution of beam current and angles over a waist exceeding 300 mm, allowing full wafer processing in one pass. Chemical compounds are delivered at PoU through linear shower heads. The reactive chemical compound delivered in this fashion maintains its molecular integrity. This result in protection of the trench side walls from deposition of etch residue and facilitates formation of volatile byproducts. The technology was used successfully for mitigation of Magnetic Tunel Junction etch residue. Other applications were this technology differentiate from present technologies are contact liner etch, Co recess, and 1D hole elongation.

  5. RF plasma source for heavy ion beam charge neutralization

    SciTech Connect

    Efthimion, Philip C.; Gilson, Erik; Grisham, Larry; Davidson, Ronald C.; Yu, Simon S.; Logan, B. Grant

    2003-05-01

    Highly ionized plasmas are being used as a medium for charge neutralizing heavy ion beams in order to focus the ion beam to a small spot size. A radio frequency (RF) plasma source has been built at the Princeton Plasma Physics Laboratory (PPPL) in support of the joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The goal is to operate the source at pressures {approx} 10{sup -5} Torr at full ionization. The initial operation of the source has been at pressures of 10{sup -4}-10{sup -1} Torr and electron densities in the range of 10{sup 8}-10{sup 11} cm{sup -3}. Recently, pulsed operation of the source has enabled operation at pressures in the 10{sup -6} Torr range with densities of 10{sup 11} cm{sup -3}. Near 100% ionization has been achieved. The source has been integrated with the NTX facility and experiments have begun.

  6. Ion beam modification of biological materials in nanoscale

    NASA Astrophysics Data System (ADS)

    Yu, L. D.; Anuntalabhochai, S.

    2012-07-01

    Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

  7. Solar wind double ions beams and the heliospheric current sheet

    NASA Technical Reports Server (NTRS)

    Hammond, C. M.; Feldman, W. C.; Phillips, J. L.; Goldstein, B. E.; Balogh, A.

    1995-01-01

    Double ion beams are often observed in the solar wind, but little work has been done in relating these beams to structures within the solar wind. Double ion beams are observed as beams of a given ion species and charge state occurring at two different energies. We use the three-dimensional ion plasma instrument on board the Ulysses spacecraft to look for evidence of such beams associated with the heliospheric current sheet. In a subset chosen independently of plasma parameters consisting of 8 of cover 47 crossings of the current sheet made during the inecliptic phase of the Ulysses mission we find that these double ion beams are always present on either side of the current sheet. The double beams are present in both the proton and helium species. The secondary beam typically has a higher helium abundance, which suggests that these beams are formed in the helium-rich corona rather than in interplanetary space. The double beams are not present in the interior of the current sheet. Neither collisions nor effects of plasma beta can account for the disappearance of the double beams inside the current sheet in all eight cases. We postulate that these beams are formed by reconnection occurring near the Sun in the boundary region between the open field lines of the coronal holes and the closed field line region of the heliospheric current sheet. Such a scenario would be consistent with previous X ray measurements which suggect that reconnection is occurring in this region.

  8. Studies of Ion Beam Charge Neutralization by Ferroelectric Plasma Sources

    NASA Astrophysics Data System (ADS)

    Stepanov, A.; Gilson, E. P.; Grisham, L.; Davidson, R. C.

    2013-10-01

    Space-charge forces limit the possible transverse compression of high perveance ion beams that are used in ion-beam-driven high energy density physics applications; the minimum radius to which a beam can be focused is an increasing function of perveance. The limit can be overcome if a plasma is introduced in the beam path between the focusing element and the target in order to neutralize the space charge of the beam. This concept has been implemented on the Neutralized Drift Compression eXperiment (NDCX) at LBNL using Ferroelectric Plasma Sources (FEPS). In our experiment at PPPL, we propagate a perveance-dominated ion beam through a FEPS to study the effect of the neutralizing plasma on the beam envelope and its evolution in time. A 30-60 keV space-charge-dominated Argon beam is focused with an Einzel lens into a FEPS located at the beam waist. The beam is intercepted downstream from the FEPS by a movable Faraday cup that provides time-resolved 2D current density profiles of the beam spot on target. We report results on: (a) dependence of charge neutralization on FEPS plasma density; (b) effects on beam emittance, and (c) time evolution of the beam envelope after the FEPS pulse. Research supported by the U.S. Department of Energy.

  9. Solution deposition planarization for ion beam texturing of long-length flexible substrates

    SciTech Connect

    Sheehan, Chris J; Jung, Yehyun; Holesinger, Terry G; Matias, Vladimir

    2010-12-01

    We present the results of a study of solution deposition planarization (SDP) for preparing smooth flexible substrates in long lengths. Roll to roll fabrication of electronic and power devices with single-crystal properties are desired for inexpensive production. Using the SDP process we have achieved 0.5 nm RMS roughness from a starting roughness of over 20 nm on 5 {micro}m areas. We model the surface roughness reduction as governed by the amount of film shrinkage during solution deposition, number of coatings, solution composition and a residual roughness based on film thickness. This process is extremely well suited for ion-beam texturing of MgO. By utilizing solution deposition of a-Y{sub 2}O{sub 3} to planarize the substrate we create the required surface for in-plane MgO texturing using assisted ion-beam deposition. We have achieved in-plane texture FWHM of 4{sup o} on the SDP substrates. Using an appropriate simple layer architecture for superconducting coated conductors we attained critical currents in excess of 3 MA/cm{sup 2} at 75 K for 1-1.2 {micro}m thick YBa{sub 2}Cu{sub 3}O{sub y} films.

  10. Improve optics fabrication efficiency by using a radio frequency ion beam figuring tool.

    PubMed

    Lu, Ying; Xie, Xuhui; Zhou, Lin; Dai, Zuocai; Chen, Guiyang

    2017-01-10

    An ion beam with high removal rate and small diameter is expected in ion beam figuring. For an ion beam figuring tool, reducing the extraction grid opening is a feasible method to decrease the ion beam diameter, but the ion beam removal rate decreases at the same time. The ion beam removal rate depends much on the ion density in the ion source discharge room. The plasma in a hollow cathode (HC) ion source and a radio frequency (RF) ion source was simulated. The simulations suggested that the ion density in the RF ion source is higher than that of the HC one. Then, a RF ion source with an integrative matching network was developed and tested in this paper, where the ion beam removal rate reached up to 193 nm/min for 10 mm opening extraction grids.

  11. Effects of a dielectric material in an ion source on the ion beam current density and ion beam energy

    SciTech Connect

    Fujiwara, Y. Sakakita, H.; Nakamiya, A.; Hirano, Y.; Kiyama, S.

    2016-02-15

    To understand a strong focusing phenomenon that occurs in a low-energy hydrogen ion beam, the electron temperature, the electron density, and the space potential in an ion source with cusped magnetic fields are measured before and after the transition to the focusing state using an electrostatic probe. The experimental results show that no significant changes are observed before or after the transition. However, we found unique phenomena that are characterized by the position of the electrostatic probe in the ion source chamber. Specifically, the extracted ion beam current density and energy are obviously enhanced in the case where the electrostatic probe, which is covered by a dielectric material, is placed close to an acceleration electrode.

  12. Generating High-Brightness Ion Beams for Inertial Confinement Fusion

    NASA Astrophysics Data System (ADS)

    Cuneo, M. E.

    1997-11-01

    The generation of high current density ion beams with applied-B ion diodes showed promise in the late-1980's as an efficient, rep-rate, focusable driver for inertial confinement fusion. These devices use several Tesla insulating magnetic fields to restrict electron motion across anode-cathode gaps of order 1-2 cm, while accelerating ions to generate ≈ 1 kA/cm^2, 5 - 15 MeV beams. These beams have been used to heat hohlraums to about 65 eV. However, meeting the ICF driver requirements for low-divergence and high-brightness lithium ion beams has been more technically challenging than initially thought. Experimental and theoretical work over the last 5 years shows that high-brightness beams meeting the requirements for inertial confinement fusion are possible. The production of these beams requires the simultaneous integration of at least four conditions: 1) rigorous vacuum cleaning techniques for control of undesired anode, cathode, ion source and limiter plasma formation from electrode contaminants to control impurity ions and impedance collapse; 2) carefully tailored insulating magnetic field geometry for uniform beam generation; 3) high magnetic fields (V_crit/V > 2) and other techniques to control the electron sheath and the onset of a high divergence electromagnetic instability that couples strongly to the ion beam; and 4) an active, pre-formed, uniform lithium plasma for low source divergence which is compatible with the above electron-sheath control techniques. These four conditions have never been simultaneously present in any lithium beam experiment, but simulations and experimental tests of individual conditions have been done. The integration of these conditions is a goal of the present ion beam generation program at Sandia. This talk will focus on the vacuum cleaning techniques for ion diodes and pulsed power devices in general, including experimental results obtained on the SABRE and PBFA-II accelerators over the last 3 years. The current status of

  13. Light and heavy ion beam analysis of thin biological sections

    NASA Astrophysics Data System (ADS)

    Lee, Joonsup; Siegele, Rainer; Pastuovic, Zeljko; Hackett, Mark J.; Hunt, Nicholas H.; Grau, Georges E.; Cohen, David D.; Lay, Peter A.

    2013-07-01

    The application of ion beam analysis (IBA) techniques to thin biological sections (ThBS) presents unique challenges in sample preparation, data acquisition and analysis. These samples are often the end product of expensive, time-consuming experiments, which involve many steps that require careful attention. Analysis via several techniques can maximise the information that is collected from these samples. Particle-induced X-ray emission (PIXE) and Rutherford backscattering (RBS) spectroscopy are two generally non-destructive IBA techniques that use the same MeV ions and can be performed simultaneously. The use of heavy ion PIXE applied to thick samples has, in the past, resulted in X-ray spectra of a poorer quality when compared to those obtained with proton beams. One of the reasons for this is the shorter probing depth of the heavy ions, which does not affect thin sample analysis. Therefore, we have investigated and compared 3-MeV proton and 36-MeV carbon ion beams on 7-μm thick mouse brain sections at the ANSTO Heavy ion microprobe (HIMP). The application of a 36-MeV C4+ ion beam for PIXE mapping of ThBS on thin Si3N4 substrate windows produced spectra of high quality that displayed close to a nine-times gain in signal yield (Z2/q) when compared to those obtained for 3-MeV protons for P, S, Cl and K but not for Fe, Cu and Zn. Image quality was overall similar; however, some elements showed better contrast and features with protons whilst others showed improved contrast with a carbon ion beam. RBS spectra with high enough counting statistics were easily obtained with 3-MeV proton beams resulting in high resolution carbon maps, however, the count rate for nitrogen and oxygen was too low. The results demonstrate that on thin samples, 36-MeV C4+ will produce good quality PIXE spectra in less time; therefore, carbon ions may be advantageous depending on which element is being studied. However, these advantages may be outweighed by the inherent disadvantages including

  14. Controllable and facile fabrication of gold nanostructures for selective metal-assisted etching of silicon.

    PubMed

    Zhang, Xinyue; Zhu, Juan; Huang, Xiaopeng; Qian, Qiuping; He, Yonglin; Chi, Lifeng; Wang, Yapei

    2014-06-25

    A method with the combination of organic-vapor-assisted polymer swelling and nanotransfer printing (nTP) is used to manufacture desirable patterns consisting of gold nano-clusters on silicon wafers for Au-assisted etching of silicon. This method remarkably benefits to the size control and regional selection of the deposited Au. By tuning the thickness of the Au films deposited on the polydimethylsiloxane (PDMS) stamps, along with the swelling of PDMS stamps in acetone atmosphere, the Au films are cracked into diverse nanostructures. These nanostructures are covalently transferred onto silicon substrates in a large scale and enable to accelerate the chemical etching of silicon. The etched areas are composed of porous structures which can be readily distinguished from the surroundings on optical microscope. PDMS stamps and the Au clusters provide the control over the feature of the etched areas and the porous silicon, respectively. The silicon surfaces with patterned porous features offer a platform for exploiting new functional templates, for example, they present a diversity of antireflective and fluorescent performance.

  15. Intercomparison of ion beam analysis software for the simulation of backscattering spectra from two-dimensional structures

    NASA Astrophysics Data System (ADS)

    Mayer, M.; Malinský, P.; Schiettekatte, F.; Zolnai, Z.

    2016-10-01

    The codes RBS-MAST, STRUCTNRA, F95-Rough and CORTEO are simulation codes for ion beam analysis spectra from two- or three-dimensional sample structures. The codes were intercompared in a code-code comparison using an idealized grating structure and by comparison to experimental data from a silicon grating on tantalum interlayer. All codes are in excellent agreement at higher incident energies and not too large energy losses. At lower incident energies, grazing angles of incidence and/or larger energy losses plural scattering effects play an increasing role. Simulation codes with plural scattering capabilities offer higher accuracy and better agreement to experimental results in this regime.

  16. Reaction dynamics induced by the radioactive ion beam 7Be on medium-mass and heavy targets

    NASA Astrophysics Data System (ADS)

    Mazzocco, M.; Boiano, A.; Boiano, C.; La Commara, M.; Manea, C.; Parascandolo, C.; Pierroutsakou, D.; Stefanini, C.; Strano, E.; Torresi, D.; Acosta, L.; Di Meo, P.; Fernandez-Garcia, J. P.; Glodariu, T.; Grebosz, J.; Guglielmetti, A.; Keeley, N.; Lay, J. A.; Marquinez-Duran, G.; Martel, I.; Mazzocchi, C.; Molini, P.; Nicoletto, M.; Pakou, A.; Parkar, V. V.; Rusek, K.; Sánchez-Benítez, A. M.; Sandoli, M.; Sava, T.; Sgouros, O.; Signorini, C.; Silvestri, R.; Soramel, F.; Soukeras, V.; Stiliaris, E.; Stroe, L.; Toniolo, N.; Zerva, K.

    2015-10-01

    We studied the reaction dynamics induced at Coulomb barrier energies by the weakly-bound Radioactive Ion Beam 7Be (Sα = 1.586 MeV) on medium-mass (58Ni) and heavy (208Pb) targets. The experiments were performed at INFN-LNL (Italy), where a 2-3×105 pps 7Be secondary beam was produced with the RIB in-flight facility EXOTIC. Charged reaction products were detected by means of high-granularity silicon detectors in rather wide angular ranges. The contribution presents an up-to-date status of the data analysis and theoretical interpretation for both systems.

  17. Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth.

    PubMed

    Chen, Wanghua; Yu, Linwei; Misra, Soumyadeep; Fan, Zheng; Pareige, Philippe; Patriarche, Gilles; Bouchoule, Sophie; Roca i Cabarrocas, Pere

    2014-06-12

    The incorporation of metal atoms into silicon nanowires during metal-particle-assisted growth is a critical issue for various nanowire-based applications. Here we have been able to access directly the incorporation and redistribution of metal atoms into silicon nanowires produced by two different processes at growth rates ranging from 3 to 40 nm s(-1), by using laser-assisted atom probe tomography and scanning transmission electron microscopy. We find that the concentration of metal impurities in crystalline silicon nanowires increases with the growth rate and can reach a level of two orders of magnitude higher than that in their equilibrium solubility. Moreover, we demonstrate that the impurities are first incorporated into nanowire volume and then segregate at defects such as the twin planes. A dimer-atom-insertion kinetic model is proposed to account for the impurity incorporation into nanowires.

  18. Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications

    NASA Astrophysics Data System (ADS)

    Lee, Seyeong; Kim, Dongyoon; Kim, Seong-Min; Kim, Jeong-Ah; Kim, Taesoo; Kim, Dong-Yu; Yoon, Myung-Han

    2015-08-01

    Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc.Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical

  19. Compact silicon photonic resonance-assisted variable optical attenuator

    DOE PAGES

    Wang, Xiaoxi; Aguinaldo, Ryan; Lentine, Anthony; ...

    2016-11-17

    Here, a two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. Finally, we derive and discuss a simple thermal-resistance model in explanation of these effects.

  20. The mechanism of galvanic/metal-assisted etching of silicon

    NASA Astrophysics Data System (ADS)

    Kolasinski, Kurt W.

    2014-08-01

    Metal-assisted etching is initiated by hole injection from an oxidant catalyzed by a metal nanoparticle or film on a Si surface. It is shown that the electronic structure of the metal/Si interface, i.e., band bending, is not conducive to diffusion of the injected hole away from the metal in the case of Ag or away from the metal/Si interface in the cases of Au, Pd, and Pt. Since holes do not diffuse away from the metals, the electric field resulting from charging of the metal after hole injection must instead be the cause of metal-assisted etching.

  1. The mechanism of galvanic/metal-assisted etching of silicon.

    PubMed

    Kolasinski, Kurt W

    2014-01-01

    Metal-assisted etching is initiated by hole injection from an oxidant catalyzed by a metal nanoparticle or film on a Si surface. It is shown that the electronic structure of the metal/Si interface, i.e., band bending, is not conducive to diffusion of the injected hole away from the metal in the case of Ag or away from the metal/Si interface in the cases of Au, Pd, and Pt. Since holes do not diffuse away from the metals, the electric field resulting from charging of the metal after hole injection must instead be the cause of metal-assisted etching.

  2. Measurement of ultra-low ion energy of decelerated ion beam using a deflecting electric field

    NASA Astrophysics Data System (ADS)

    Thopan, P.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.

    2015-12-01

    In investigation on ultra-low-energy ion bombardment effect on DNA, an ion beam deceleration lens was developed for high-quality ultra-low-energy ion beam. Measurement of the ion energy after deceleration was necessary to confirm the ion beam really decelerated as theoretically predicted. In contrast to conventional methods, this work used a simple deflecting electrostatic field after the deceleration lens to bend the ion beam. The beam bending distance depended on the ion energy and was described and simulated. A system for the measurement of the ion beam energy was constructed. It consisted of a pair of parallel electrode plates to generate the deflecting electrical field, a copper rod measurement piece to detect ion beam current, a vernier caliper to mark the beam position, a stepping motor to translate the measurement rod, and a webcam-camera to read the beam bending distance. The entire system was installed after the ion-beam deceleration lens inside the large chamber of the bioengineering vertical ion beam line. Moving the measurement rod across the decelerated ion beam enabled to obtain beam profiles, from which the beam bending distance could be known and the ion beam energy could be calculated. The measurement results were in good agreement with theoretical and simulated results.

  3. Arc-based smoothing of ion beam intensity on targets

    DOE PAGES

    Friedman, Alex

    2012-06-20

    Manipulating a set of ion beams upstream of a target, makes it possible to arrange a smoother deposition pattern, so as to achieve more uniform illumination of the target. A uniform energy deposition pattern is important for applications including ion-beam-driven high energy density physics and heavy-ion beam-driven inertial fusion energy (“heavy-ion fusion”). Here, we consider an approach to such smoothing that is based on rapidly “wobbling” each of the beams back and forth along a short arc-shaped path, via oscillating fields applied upstream of the final pulse compression. In this technique, uniformity is achieved in the time-averaged sense; this ismore » sufficient provided the beam oscillation timescale is short relative to the hydrodynamic timescale of the target implosion. This work builds on two earlier concepts: elliptical beams applied to a distributed-radiator target [D. A. Callahan and M. Tabak, Phys. Plasmas 7, 2083 (2000)] and beams that are wobbled so as to trace a number of full rotations around a circular or elliptical path [R. C. Arnold et al., Nucl. Instrum. Methods 199, 557 (1982)]. Here, we describe the arc-based smoothing approach and compare it to results obtainable using an elliptical-beam prescription. In particular, we assess the potential of these approaches for minimization of azimuthal asymmetry, for the case of a ring of beams arranged on a cone. We also found that, for small numbers of beams on the ring, the arc-based smoothing approach offers superior uniformity. In contrast with the full-rotation approach, arc-based smoothing remains usable when the geometry precludes wobbling the beams around a full circle, e.g., for the X-target [E. Henestroza, B. G. Logan, and L. J. Perkins, Phys. Plasmas 18, 032702 (2011)] and some classes of distributed-radiator targets.« less

  4. Arc-based smoothing of ion beam intensity on targets

    SciTech Connect

    Friedman, Alex

    2012-06-15

    By manipulating a set of ion beams upstream of a target, it is possible to arrange for a smoother deposition pattern, so as to achieve more uniform illumination of the target. A uniform energy deposition pattern is important for applications including ion-beam-driven high energy density physics and heavy-ion beam-driven inertial fusion energy ('heavy-ion fusion'). Here, we consider an approach to such smoothing that is based on rapidly 'wobbling' each of the beams back and forth along a short arc-shaped path, via oscillating fields applied upstream of the final pulse compression. In this technique, uniformity is achieved in the time-averaged sense; this is sufficient provided the beam oscillation timescale is short relative to the hydrodynamic timescale of the target implosion. This work builds on two earlier concepts: elliptical beams applied to a distributed-radiator target [D. A. Callahan and M. Tabak, Phys. Plasmas 7, 2083 (2000)] and beams that are wobbled so as to trace a number of full rotations around a circular or elliptical path [R. C. Arnold et al., Nucl. Instrum. Methods 199, 557 (1982)]. Here, we describe the arc-based smoothing approach and compare it to results obtainable using an elliptical-beam prescription. In particular, we assess the potential of these approaches for minimization of azimuthal asymmetry, for the case of a ring of beams arranged on a cone. It is found that, for small numbers of beams on the ring, the arc-based smoothing approach offers superior uniformity. In contrast with the full-rotation approach, arc-based smoothing remains usable when the geometry precludes wobbling the beams around a full circle, e.g., for the X-target [E. Henestroza, B. G. Logan, and L. J. Perkins, Phys. Plasmas 18, 032702 (2011)] and some classes of distributed-radiator targets.

  5. Arc-based smoothing of ion beam intensity on targets

    SciTech Connect

    Friedman, Alex

    2012-06-20

    Manipulating a set of ion beams upstream of a target, makes it possible to arrange a smoother deposition pattern, so as to achieve more uniform illumination of the target. A uniform energy deposition pattern is important for applications including ion-beam-driven high energy density physics and heavy-ion beam-driven inertial fusion energy (“heavy-ion fusion”). Here, we consider an approach to such smoothing that is based on rapidly “wobbling” each of the beams back and forth along a short arc-shaped path, via oscillating fields applied upstream of the final pulse compression. In this technique, uniformity is achieved in the time-averaged sense; this is sufficient provided the beam oscillation timescale is short relative to the hydrodynamic timescale of the target implosion. This work builds on two earlier concepts: elliptical beams applied to a distributed-radiator target [D. A. Callahan and M. Tabak, Phys. Plasmas 7, 2083 (2000)] and beams that are wobbled so as to trace a number of full rotations around a circular or elliptical path [R. C. Arnold et al., Nucl. Instrum. Methods 199, 557 (1982)]. Here, we describe the arc-based smoothing approach and compare it to results obtainable using an elliptical-beam prescription. In particular, we assess the potential of these approaches for minimization of azimuthal asymmetry, for the case of a ring of beams arranged on a cone. We also found that, for small numbers of beams on the ring, the arc-based smoothing approach offers superior uniformity. In contrast with the full-rotation approach, arc-based smoothing remains usable when the geometry precludes wobbling the beams around a full circle, e.g., for the X-target [E. Henestroza, B. G. Logan, and L. J. Perkins, Phys. Plasmas 18, 032702 (2011)] and some classes of distributed-radiator targets.

  6. HIGH ENERGY DENSITY PHYSICS EXPERIMENTS WITH INTENSE HEAVY ION BEAMS

    SciTech Connect

    Henestroza, E.; Leitner, M.; Logan, B.G.; More, R.M.; Roy, P.K.; Ni, P.; Seidl, P.A.; Waldron, W.L.; Barnard, J.J.

    2010-03-16

    The US heavy ion fusion science program has developed techniques for heating ion-beam-driven warm dense matter (WDM) targets. The WDM conditions are to be achieved by combined longitudinal and transverse space-charge neutralized drift compression of the ion beam to provide a hot spot on the target with a beam spot size of about 1 mm, and pulse length about 1-2 ns. As a technique for heating volumetric samples of matter to high energy density, intense beams of heavy ions are capable of delivering precise and uniform beam energy deposition dE/dx, in a relatively large sample size, and the ability to heat any solid-phase target material. Initial experiments use a 0.3 MeV K+ beam (below the Bragg peak) from the NDCX-I accelerator. Future plans include target experiments using the NDCX-II accelerator, which is designed to heat targets at the Bragg peak using a 3-6 MeV lithium ion beam. The range of the beams in solid matter targets is about 1 micron, which can be lengthened by using porous targets at reduced density. We have completed the fabrication of a new experimental target chamber facility for WDM experiments, and implemented initial target diagnostics to be used for the first target experiments in NDCX-1. The target chamber has been installed on the NDCX-I beamline. The target diagnostics include a fast multi-channel optical pyrometer, optical streak camera, VISAR, and high-speed gated cameras. Initial WDM experiments will heat targets by compressed NDCX-I beams and will explore measurement of temperature and other target parameters. Experiments are planned in areas such as dense electronegative targets, porous target homogenization and two-phase equation of state.

  7. Contribution of ion beam analysis methods to the development of second generation high temperature superconducting wires

    NASA Astrophysics Data System (ADS)

    Usov, I. O.; Arendt, P. N.; Foltyn, S. R.; Stan, L.; DePaula, R. F.; Holesinger, T. G.

    2010-06-01

    One of the crucial steps in the second generation high temperature superconducting wire program was development of the buffer-layer architecture. The architecture designed at the Superconductivity Technology Center at Los Alamos National Laboratory consists of several oxide layers wherein each layer plays a specific role, namely: nucleation layer, diffusion barrier, biaxially textured template, and intermediate layer providing a suitable lattice match to the superconducting Y 1Ba 2Cu 3O 7 (YBCO) compound. This report demonstrates how a wide range of ion beam analysis techniques (SIMS, RBS, channeling, PIXE, PIGE, NRA and ERD) was employed for analysis of each buffer layer and the YBCO film. These results assisted in understanding of a variety of physical processes occurring during the buffer layer fabrication and helped to optimize the buffer-layer architecture as a whole.

  8. Shielding and Radiation Protection in Ion Beam Therapy Facilities

    NASA Astrophysics Data System (ADS)

    Wroe, Andrew J.; Rightnar, Steven

    Radiation protection is a key aspect of any radiotherapy (RT) department and is made even more complex in ion beam therapy (IBT) by the large facility size, secondary particle spectra and intricate installation of these centers. In IBT, large and complex radiation producing devices are used and made available to the public for treatment. It is thus the responsibility of the facility to put in place measures to protect not only the patient but also the general public, occupationally and nonoccupationally exposed personnel working within the facility, and electronics installed within the department to ensure maximum safety while delivering maximum up-time.

  9. The prospects of a subnanometer focused neon ion beam.

    PubMed

    Rahman, F H M; McVey, Shawn; Farkas, Louis; Notte, John A; Tan, Shida; Livengood, Richard H

    2012-01-01

    The success of the helium ion microscope has encouraged extensions of this technology to produce beams of other ion species. A review of the various candidate ion beams and their technical prospects suggest that a neon beam might be the most readily achieved. Such a neon beam would provide a sputtering yield that exceeds helium by an order of magnitude while still offering a theoretical probe size less than 1-nm. This article outlines the motivation for a neon gas field ion source, the expected performance through simulations, and provides an update of our experimental progress.

  10. Quasi-liquid states observed on ion beam microtextured surfaces

    NASA Technical Reports Server (NTRS)

    Rossnagel, S. M.; Robinson, R. S.

    1982-01-01

    Liquid-like properties have been observed on surface structures developed by means of ion beam microtexturing. The structures include cones, pyramids, or wavelike formations. The observed liquid-like effects are drips and ripples on the sides of cones, droplet formation, the apparent flow and coalescence of closely packed structures, wetting angle and other surface tension effects, and the bending of cones by additional heating. The bulk temperatures are in the range of 50-600 C. These effects are seen to some extent on Cu, Al, Au, Pb, and Ni substrates.

  11. Laser ion source for high brightness heavy ion beam

    SciTech Connect

    Okamura, M.

    2016-09-01

    A laser ion source is known as a high current high charge state heavy ion source. But, we place great emphasis on the capability to realize a high brightness ion source. A laser ion source has a pinpoint small volume where materials are ionized and can achieve quite uniform low temperature ion beam. Those features may enable us to realize very small emittance beams. Furthermore, a low charge state high brightness laser ion source was successfully commissioned in Brookhaven National Laboratory in 2014. Now most of all the solid based heavy ions are being provided from the laser ion source for regular operation.

  12. Pattern evolution during ion beam sputtering; reductionistic view

    NASA Astrophysics Data System (ADS)

    Kim, J.-H.; Kim, J.-S.

    2016-09-01

    The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley-Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.

  13. The Scientific program with RIBRAS (Radioactive Ion Beams in Brasil)

    SciTech Connect

    Lichtenthaeler, R.; Lepine-Szily, A.; Guimaraes, V.; Faria, P. N. de; Mendes, D. R. Jr.; Pires, K. C. C.; Morcelle, V.; Hussein, M. S.; Barioni, A.; Condori, R. Pampa; Morais, M. C.; Alcantara Nunez, J.; Camargo, O. Jr.; Otani, Y.; Leistenschneider, E.; Scarduelli, V.; Benjamim, E. A.; Arazi, A.; Assuncao, M.

    2009-06-03

    The Radioactive Ion Beams Facility (RIBRAS) is in operation since 2004 at the Pelletron Accelerator Laboratory of the University of Sao Paulo and consists of two superconducting solenoids capable of producing low energy secondary beams of light exotic nuclei. Measurements of the elastic scattering, breakup and transfer reactions with radioactive projectiles such as {sup 6}He,{sup 8}Li,{sup 7}Be on several targets have been performed. A review of the research program carried on along the last four years using the RIBRAS facility is presented.

  14. Laser ion source for high brightness heavy ion beam

    DOE PAGES

    Okamura, M.

    2016-09-01

    A laser ion source is known as a high current high charge state heavy ion source. But, we place great emphasis on the capability to realize a high brightness ion source. A laser ion source has a pinpoint small volume where materials are ionized and can achieve quite uniform low temperature ion beam. Those features may enable us to realize very small emittance beams. Furthermore, a low charge state high brightness laser ion source was successfully commissioned in Brookhaven National Laboratory in 2014. Now most of all the solid based heavy ions are being provided from the laser ion sourcemore » for regular operation.« less

  15. Range and Energy Straggling in Ion Beam Transport

    NASA Technical Reports Server (NTRS)

    Wilson, John W.; Tai, Hsiang

    2000-01-01

    A first-order approximation to the range and energy straggling of ion beams is given as a normal distribution for which the standard deviation is estimated from the fluctuations in energy loss events. The standard deviation is calculated by assuming scattering from free electrons with a long range cutoff parameter that depends on the mean excitation energy of the medium. The present formalism is derived by extrapolating Payne's formalism to low energy by systematic energy scaling and to greater depths of penetration by a second-order perturbation. Limited comparisons are made with experimental data.

  16. Ion beams in radiotherapy - from tracks to treatment planning

    NASA Astrophysics Data System (ADS)

    Krämer, M.; Scifoni, E.; Wälzlein, C.; Durante, M.

    2012-07-01

    Several dozen clinical sites around the world apply beams of fast light ions for radiotherapeutical purposes. Thus there is a vested interest in the various physical and radiobiological processes governing the interaction of ion beams with matter, specifically living systems. We discuss the various modelling steps which lead from basic interactions to the application in actual patient treatment planning. The nano- and microscopic scale is covered by sample calculations with our TRAX code. On the macroscopic scale we feature the TRiP98 treatment planning system, which was clinically used in GSI's radiotherapy pilot project.

  17. 22nd International Conference on Ion Beam Analysis

    NASA Astrophysics Data System (ADS)

    Radović, Iva Bogdanović; Jakšić, Milko; Fazinić, Stjepko

    2016-03-01

    This special issue of Nuclear Instruments and Methods in Physics Research B contains the proceedings of the 22nd International Conference on Ion Beam Analysis (IBA 2015). The conference was held in Grand Hotel 4 Opatijska Cvijeta in Opatija, Croatia, between 14th and 19th June 2015. Opatija, one of the Croatia's most famous touristic destinations, often called the pearl of the Adriatic, is celebrating this year 170 years of tourism. During the past, kings and emperors, writers, philosophers, poets and composers, but also scientists, used to stay in the town mainly built at the turn of the 20th century.

  18. Focused Ion Beam Microscopy of ALH84001 Carbonate Disks

    NASA Technical Reports Server (NTRS)

    Thomas-Keprta, Kathie L.; Clemett, Simon J.; Bazylinski, Dennis A.; Kirschvink, Joseph L.; McKay, David S.; Vali, Hojatollah; Gibson, Everett K., Jr.; Romanek, Christopher S.

    2005-01-01

    Our aim is to understand the mechanism(s) of formation of carbonate assemblages in ALH84001. A prerequisite is that a detailed characterization of the chemical and physical properties of the carbonate be established. We present here analyses by transmission electron microscopy (TEM) of carbonate thin sections produced by both focused ion beam (FIB) sectioning and ultramicrotomy. Our results suggest that the formation of ALH84001 carbonate assemblages were produced by considerably more complex process(es) than simple aqueous precipitation followed by partial thermal decomposition as proposed by other investigators [e.g., 1-3].

  19. Intense ion beam applications to magnetic confinement fusion

    SciTech Connect

    Sudan, R N

    1980-08-18

    The ion ring project objective is to trap a ring of high energy, axis-encircling ions in a magnetic mirror. The number of ring ions should be such as to produce deltaB/B on the ring axis of order 10%. The second experiment, LONGSHOT, is directed to producing a long pulse ion beam source so that the total number of protons required for an ion ring can be provided a lower diode power and, hence, at much less cost than that of 100 nsec pulsed power generators like the NRL GAMBLE II. A detailed report of the progress on IREX and LONGSHOT is given. (MOW)

  20. Cellular track model for study of heavy ion beams

    NASA Technical Reports Server (NTRS)

    Shinn, Judy L.; Katz, Robert; Cucinotta, Francis A.; Wilson, John W.; Ngo, Duc M.

    1993-01-01

    Track theory is combined with a realistic model of a heavy ion beam to study the effects of nuclear fragmentation on cell survival and biological effectiveness. The effects of secondary reaction products are studied as a function of depth in a water column. Good agreement is found with experimental results for the survival of human T-l cells exposed to monoenergetic carbon, neon, and argon beams under aerobic and hypoxia conditions. The present calculation, which includes the effect of target fragmentation, is a significant improvement over an earlier calculation because of the use of a vastly improved beam model with no change in the track theory or cellular response parameters.

  1. Ion beam analysis in cultural heritage studies: Milestones and perspectives

    SciTech Connect

    Dran, Jean-Claude; Calligaro, Thomas

    2013-07-18

    For three decades, ion beam analysis (IBA) in external mode was considered as the best choice for the characterisation of cultural heritage materials, as it combines excellent analytical performance and non-invasive character. However, in recent years, other analytical techniques arose as serious competitors, such as those based on synchrotron radiation (X-ray absorption, fluorescence or diffraction) or those using portable instruments (XRF, micro-Raman). It is shown that nevertheless IBA remains unmatched thanks to two unique features, namely the analysis of light elements and the high-resolution 3D chemical imaging.

  2. Microsecond pulse width, intense, light-ion beam accelerator

    NASA Astrophysics Data System (ADS)

    Rej, D. J.; Bartsch, R. R.; Davis, H. A.; Faehl, R. J.; Greenly, J. B.; Waganaar, W. J.

    1993-10-01

    A relatively long-pulse width (0.1-1 μs) intense ion beam accelerator has been built for materials processing applications. An applied Br, magnetically insulated extraction ion diode with dielectric flashover ion source is installed directly onto the output of a 1.2 MV, 300-kJ Marx generator. The diode is designed with the aid of multidimensional particle-in-cell simulations. Initial operation of the accelerator at 0.4 MV indicates satisfactory performance without the need for additional pulse shaping. The effect of a plasma opening switch on diode behavior is considered.

  3. Intense ion-beam dynamics in the NICA collider

    NASA Astrophysics Data System (ADS)

    Kozlov, O. S.; Meshkov, I. N.; Sidorin, A. O.; Trubnikov, G. V.

    2016-12-01

    The problems of intense ion-beam dynamics in the developed and optimized optical structure of the NICA collider are considered. Conditions for beam collisions and obtaining the required parameters of luminosity in the operation energy range are discussed. The restriction on collider luminosity is related to effects of the domination of the space charge and intrabeam scattering. Applying methods of cooling, electron and stochastic ones, will permit one to suppress these effects and reach design luminosity. The work also deals with systems of magnetic field correction and problems of calculating the dynamic aperture of the collider.

  4. Ion-beam-enhanced adhesion in the electronic stopping region

    NASA Technical Reports Server (NTRS)

    Griffith, J. E.; Qiu, Y.; Tombrello, T. A.

    1981-01-01

    The use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials is described. In particular, the bonding of Au films to Teflon, ferrite, and SiO2 was improved by bombarding them with He and Cl, respectively. Improvements in bonding were also observed for Au on glass, Au and Cu on sapphire, and Si3N4 on Si. The mechanism is apparently associated with sputtering and track forming processes occurring in the electronic stopping region. Some applications are discussed.

  5. Laser ion source for high brightness heavy ion beam

    NASA Astrophysics Data System (ADS)

    Okamura, M.

    2016-09-01

    A laser ion source is known as a high current high charge state heavy ion source. However we place great emphasis on the capability to realize a high brightness ion source. A laser ion source has a pinpoint small volume where materials are ionized and can achieve quite uniform low temperature ion beam. Those features may enable us to realize very small emittance beams. In 2014, a low charge state high brightness laser ion source was successfully commissioned in Brookhaven National Laboratory. Now most of all the solid based heavy ions are being provided from the laser ion source for regular operation.

  6. Ion beam nanopatterning in graphite: characterization of single extended defects.

    PubMed

    Mélinon, P; Hannour, A; Bardotti, L; Prével, B; Gierak, J; Bourhis, E; Faini, G; Canut, B

    2008-06-11

    The morphology and the electronic structure of a single focused ion-beam-induced artificial extended defect is probed by several methods including micro-Raman spectroscopy, atomic force and scanning tunneling microscopies and Monte Carlo and/or semi-analytical simulation within standard codes. The efficiency of the artificial defect for deposited metallic cluster pinning is also investigated. We show a correlation between the ion dose, morphology, electronic structure and cluster trapping efficiency. At room temperature, cluster pinning is efficient when the displacement per atom is one or more. Well-ordered patterned cluster networks are considered for potential applications.

  7. Investigations of a flat-panel detector for quality assurance measurements in ion beam therapy.

    PubMed

    Hartmann, Bernadette; Telsemeyer, Julia; Huber, Lucas; Ackermann, Benjamin; Jäkel, Oliver; Martišíková, Mária

    2012-01-07

    Increased accuracy in radiation delivery to a patient provided by scanning particle beams leads to high demands on quality assurance (QA). To meet the requirements, an extensive quality assurance programme has been implemented at the Heidelberg Ion Beam Therapy Center. Currently, high-resolution radiographic films are used for beam spot position measurements and homogeneity measurements for scanned fields. However, given that using this film type is time and equipment demanding, considerations have been made to replace the radiographic films in QA by another appropriate device. In this study, the suitability of the flat-panel detector RID 256 L based on amorphous silicon was investigated as an alternative method. The currently used radiographic films were taken as a reference. Investigations were carried out for proton and carbon ion beams. The detectors were irradiated simultaneously to allow for a direct comparison. The beam parameters (e.g. energy, focus, position) currently used in the daily QA procedures were applied. Evaluation of the measurements was performed using newly implemented automatic routines. The results for the flat-panel detector were compared to the standard radiographic films. Additionally, a field with intentionally decreased homogeneity was applied to test the detector's sensitivities toward possible incorrect scan parameters. For the beam position analyses, the flat-panel detector results showed good agreement with radiographic films. For both detector types, deviations between measured and planned spot distances were found to be below 1% (1 mm). In homogeneously irradiated fields, the flat-panel detector showed a better dose response homogeneity than the currently used radiographic film. Furthermore, the flat-panel detector is sensitive to field irregularities. The flat-panel detector was found to be an adequate replacement for the radiographic film in QA measurements. In addition, it saves time and equipment because no post

  8. Ion Beam Etching: Replication of Micro Nano-structured 3D Stencil Masks

    SciTech Connect

    Weber, Patrick; Guibert, Edouard; Mikhailov, Serguei; Bruegger, Juergen; Villanueva, Guillermo

    2009-03-10

    Ion beam LIGA allows the etching of 3D nano-structures by direct writing with a nano-sized beam. However, this is a relatively time consuming process. We propose here another approach for etching structures on large surfaces and faster, compared to the direct writing process. This approach consists of replicating 3D structured masks, by scanning an unfocused ion beam. A polymer substrate is placed behind the mask, as in UV photolithography. But the main advantage is that the 3D structure of the mask can be replicated into the polymer. For that purpose, the masks (developped at LMIS1, EPFL) are made of a silicon nitride membrane 100 nm thick, on which 3D gold structures up to 200 nm thick, are deposited. The 3D Au structures are made with the nanostencil method, based on successive gold deposition. The IMA institute, from HE-Arc, owns a High Voltage Engineering 1.7 MV Tandetron with both solid and gaseous negative ion sources, able to generate ions from almost every chemical element in a broad range of energies comprised between 400 keV and 6.8 MeV. The beam composition and energy are chosen in such a way, that ions lose a significant fraction of their energy when passing through the thickest regions of the mask. Ions passing through thinner regions of the mask loose a smaller fraction of their energy and etch the polymer with larger thicknesses, allowing a replication of the mask into the polymer. For our trials, we have used a carbon beam with an energy of 500 keV. The beam was focussed to a diameter of 5 mm with solid slits, in order to avoid border effects and thus ensure a homogeneous dose distribution on the beam diameter. The feasibility of this technique has been demonstrated, allowing industrial applications for micro-mould fabrication, micro-fluidics and micro-optics.

  9. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method.

    PubMed

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

  10. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    PubMed Central

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films. PMID:25349554

  11. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    NASA Astrophysics Data System (ADS)

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-10-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

  12. Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching

    NASA Astrophysics Data System (ADS)

    de Boor, Johannes; Geyer, Nadine; Wittemann, Jörg V.; Gösele, Ulrich; Schmidt, Volker

    2010-03-01

    By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 × 107 mm - 2. The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm2. The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.

  13. Non-invasive monitoring of therapeutic carbon ion beams in a homogeneous phantom by tracking of secondary ions.

    PubMed

    Gwosch, K; Hartmann, B; Jakubek, J; Granja, C; Soukup, P; Jäkel, O; Martišíková, M

    2013-06-07

    Radiotherapy with narrow scanned carbon ion beams enables a highly accurate treatment of tumours while sparing the surrounding healthy tissue. Changes in the patient's geometry can alter the actual ion range in tissue and result in unfavourable changes in the dose distribution. Consequently, it is desired to verify the actual beam delivery within the patient. Real-time and non-invasive measurement methods are preferable. Currently, the only technically feasible method to monitor the delivered dose distribution within the patient is based on tissue activation measurements by means of positron emission tomography (PET). An alternative monitoring method based on tracking of prompt secondary ions leaving a patient irradiated with carbon ion beams has been previously suggested. It is expected to help in overcoming the limitations of the PET-based technique like physiological washout of the beam induced activity, low signal and to allow for real-time measurements. In this paper, measurements of secondary charged particle tracks around a head-sized homogeneous PMMA phantom irradiated with pencil-like carbon ion beams are presented. The investigated energies and beam widths are within the therapeutically used range. The aim of the study is to deduce properties of the primary beam from the distribution of the secondary charged particles. Experiments were performed at the Heidelberg Ion Beam Therapy Center, Germany. The directions of secondary charged particles emerging from the PMMA phantom were measured using an arrangement of two parallel pixelated silicon detectors (Timepix). The distribution of the registered particle tracks was analysed to deduce its dependence on clinically important beam parameters: beam range, width and position. Distinct dependencies of the secondary particle tracks on the properties of the primary carbon ion beam were observed. In the particular experimental set-up used, beam range differences of 1.3 mm were detectable. In addition, variations in

  14. Copper nanorod array assisted silicon waveguide polarization beam splitter.

    PubMed

    Kim, Sangsik; Qi, Minghao

    2014-04-21

    We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

  15. Copper nanorod array assisted silicon waveguide polarization beam splitter

    PubMed Central

    Kim, Sangsik; Qi, Minghao

    2014-01-01

    We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology. PMID:24787839

  16. Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications.

    PubMed

    Lee, Seyeong; Kim, Dongyoon; Kim, Seong-Min; Kim, Jeong-Ah; Kim, Taesoo; Kim, Dong-Yu; Yoon, Myung-Han

    2015-09-21

    Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc.

  17. Polygonal pits on silicon surfaces that are created by laser-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Saito, Mitsunori; Kimura, Saori

    2017-02-01

    Laser-assisted chemical etching was conducted for creating periodic textures on silicon surfaces. Silicon plates with the (111) surface orientation were immersed in an aqueous solution of potassium hydroxide, and a pulsed laser beam (532 nm wavelength, 5 ns duration, 10 pulse/s) was irradiated on their surface to promote anisotropic etching. The laser beam was patterned by using a glass capillary plate that contained a hexagonal array of micropores (10 μ m diameter, 12 m period). The focused beam projected the hexagonal image on the silicon surface, creating bright spots of 4 μ m period. During the laser irradiation process of 3 min, both laser-induced ablation and chemical etching took place at these bright spots. After stop of laser irradiation, the chemical etching progressed further, and consequently, a periodic array of triangular or hexagonal pits emerged on the silicon surface. The direction of the triangular pits changed by rotation of the silicon plate. When a silicon plate with the (100) surface orientation was used, diamond or rectangular pits were created on its surface. The mechanism of this polygonal texturing was explained by using the normal and intersecting vectors of the (100), (110), and (111) planes that exhibited different etching rates.

  18. Slit disk for modified faraday cup diagnostic for determining power density of electron and ion beams

    DOEpatents

    Teruya, Alan T [Livermore, CA; Elmer,; John, W [Danville, CA; Palmer, Todd A [State College, PA

    2011-03-08

    A diagnostic system for characterization of an electron beam or an ion beam includes an electrical conducting disk of refractory material having a circumference, a center, and a Faraday cup assembly positioned to receive the electron beam or ion beam. At least one slit in the disk provides diagnostic characterization of the electron beam or ion beam. The at least one slit is located between the circumference and the center of the disk and includes a radial portion that is in radial alignment with the center and a portion that deviates from radial alignment with the center. The electron beam or ion beam is directed onto the disk and translated to the at least one slit wherein the electron beam or ion beam enters the at least one slit for providing diagnostic characterization of the electron beam or ion beam.

  19. Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    De Vecchi, S.; Desrues, T.; Souche, F.; Muñoz, D.; Lemiti, M.

    2012-10-01

    This work reports on the elaboration of a new industrial process based on laser selective ablation of dielectric layers for Interdigitated Back Contact Silicon Heterojunction (IBC Si-HJ) solar cells fabrication. Choice of the process is discussed and cells are processed to validate its performance. A pulsed green laser (515nm) with 10-20ns pulse duration is used for hydrogenated amorphous silicon (a-Si:H) layers patterning steps, whereas metallization is made by screen printed. High Open-Circuit Voltage (Voc=699mV) and Fill Factor (FF=78.5%) values are obtained simultaneously on IBC Si-HJ cells, indicating a high surface passivation level and reduced resistive losses. An efficiency of 19% on non textured 26 cm² solar cells has been reached with this new industrial process.

  20. First experimental-based characterization of oxygen ion beam depth dose distributions at the Heidelberg Ion-Beam Therapy Center

    NASA Astrophysics Data System (ADS)

    Kurz, C.; Mairani, A.; Parodi, K.

    2012-08-01

    Over the last decades, the application of proton and heavy-ion beams to external beam radiotherapy has rapidly increased. Due to the favourable lateral and depth dose profile, the superposition of narrow ion pencil beams may enable a highly conformal dose delivery to the tumour, with better sparing of the surrounding healthy tissue in comparison to conventional radiation therapy with photons. To fully exploit the promised clinical advantages of ion beams, an accurate planning of the patient treatments is required. The clinical treatment planning system (TPS) at the Heidelberg Ion-Beam Therapy Center (HIT) is based on a fast performing analytical algorithm for dose calculation, relying, among others, on laterally integrated depth dose distributions (DDDs) simulated with the FLUKA Monte Carlo (MC) code. Important input parameters of these simulations need to be derived from a comparison of the simulated DDDs with measurements. In this work, the first measurements of 16O ion DDDs at HIT are presented with a focus on the determined Bragg peak positions and the understanding of factors influencing the shape of the distributions. The measurements are compared to different simulation approaches aiming to reproduce the acquired data at best. A simplified geometrical model is first used to optimize important input parameters, not known a priori, in the simulations. This method is then compared to a more realistic, but also more time-consuming simulation approach better accounting for the experimental set-up and the measuring process. The results of this work contributed to a pre-clinical oxygen ion beam database, which is currently used by a research TPS for corresponding radio-biological cell experiments. A future extension to a clinical database used by the clinical TPS at HIT is foreseen. As a side effect, the performed investigations showed that the typical water equivalent calibration approach of experimental data acquired with water column systems leads to slight

  1. Temperature measurements during high flux ion beam irradiations

    SciTech Connect

    Crespillo, Miguel L.; Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

    2016-02-16

    A systematic study of the ion beam heating effect was performed in a temperature range of –170 to 900 °C using a 10 MeV Au3+ ion beam and a Yttria stabilized Zirconia (YSZ) sample at a flux of 5.5 × 1012 cm–2 s–1. Different geometric configurations of beam, sample, thermocouple positioning, and sample holder were compared to understand the heat/charge transport mechanisms responsible for the observed temperature increase. The beam heating exhibited a strong dependence on the background (initial) sample temperature with the largest temperature increases occurring at cryogenic temperatures and decreasing with increasing temperature. Comparison with numerical calculations suggests that the observed heating effect is, in reality, a predominantly electronic effect and the true temperature rise is small. Furthermore, a simple model was developed to explain this electronic effect in terms of an electrostatic potential that forms during ion irradiation. Such an artificial beam heating effect is potentially problematic in thermostated ion irradiation and ion beamanalysis apparatus, as the operation of temperature feedback systems can be significantly distorted by this effect.

  2. Data-driven RBE parameterization for helium ion beams.

    PubMed

    Mairani, A; Magro, G; Dokic, I; Valle, S M; Tessonnier, T; Galm, R; Ciocca, M; Parodi, K; Ferrari, A; Jäkel, O; Haberer, T; Pedroni, P; Böhlen, T T

    2016-01-21

    Helium ion beams are expected to be available again in the near future for clinical use. A suitable formalism to obtain relative biological effectiveness (RBE) values for treatment planning (TP) studies is needed. In this work we developed a data-driven RBE parameterization based on published in vitro experimental values. The RBE parameterization has been developed within the framework of the linear-quadratic (LQ) model as a function of the helium linear energy transfer (LET), dose and the tissue specific parameter (α/β)ph of the LQ model for the reference radiation. Analytic expressions are provided, derived from the collected database, describing the RBEα = αHe/αph and Rβ = βHe/βph ratios as a function of LET. Calculated RBE values at 2 Gy photon dose and at 10% survival (RBE10) are compared with the experimental ones. Pearson's correlation coefficients were, respectively, 0.85 and 0.84 confirming the soundness of the introduced approach. Moreover, due to the lack of experimental data at low LET, clonogenic experiments have been performed irradiating A549 cell line with (α/β)ph = 5.4 Gy at the entrance of a 56.4 MeV u(-1)He beam at the Heidelberg Ion Beam Therapy Center. The proposed parameterization reproduces the measured cell survival within the experimental uncertainties. A RBE formula, which depends only on dose, LET and (α/β)ph as input parameters is proposed, allowing a straightforward implementation in a TP system.

  3. Secondary particle tracks generated by ion beam irradiation

    NASA Astrophysics Data System (ADS)

    García, Gustavo

    2015-05-01

    The Low Energy Particle Track Simulation (LEPTS) procedure is a powerful complementary tool to include the effect of low energy electrons and positrons in medical applications of radiation. In particular, for ion-beam cancer treatments provides a detailed description of the role of the secondary electrons abundantly generated around the Bragg peak as well as the possibility of using transmuted positron emitters (C11, O15) as a complement for ion-beam dosimetry. In this study we present interaction probability data derived from IAM-SCAR corrective factors for liquid environments. Using these data, single electron and positron tracks in liquid water and pyrimidine have been simulated providing information about energy deposition as well as the number and type of interactions taking place in any selected ``nanovolume'' of the irradiated area. In collaboration with Francisco Blanco, Universidad Complutense de Madrid; Antonio Mu noz, Centro de Investigaciones Energéticas Medioambientales y Tecnológicas and Diogo Almeida, Filipe Ferreira da Silva, Paulo Lim ao-Vieira, Universidade Nova de Lisboa. Supported by the Spanish and Portuguese governments.

  4. The SPES Radioactive-Ion Beam Facility of INFN

    NASA Astrophysics Data System (ADS)

    de Angelis, G.; Prete, G.; Andrighetto, A.; Manzolaro, M.; Corradetti, S.; Scarpa, D.; Rossignoli, M.; Monetti, A.; Lollo, M.; Calderolla, M.; Vasquez, J.; Zafiropoulos, D.; Sarchiapone, L.; Benini, D.; Favaron, P.; Rigato, M.; Pegoraro, R.; Maniero, D.; Comunian, M.; Maggiore, M.; Lombardi, A.; Piazza, L.; Porcellato, A. M.; Roncolato, C.; Bisoffi, G.; Pisent, A.; Galatà, A.; Giacchini, M.; Bassato, G.; Canella, S.; Gramegna, F.; Valiente, J.; Bermudez, J.; Mastinu, P. F.; Esposito, J.; Wyss, J.; Russo, A.; Zanella, S.; Calabretta, L.

    2015-11-01

    A new radioactive-ion beam (RIB) facility (SPES) is presently under construction at the Legnaro National Laboratories of INFN. The SPES facility is based on the ISOL method using a UCx direct target able to sustain a power of 10 kW. The primary proton beam will be provided by a high-current cyclotron accelerator with energy of 35-70 MeV and a beam current of 0.2-0.5 mA. Neutron-rich radioactive ions will be produced by proton-induced fission on a uranium target at an expected fission rate of the order of 1013 fissions per second. After ionization and selection the exotic isotopes will be re-accelerated by the ALPI superconducting LINAC at energies of 10A MeV for masses in the region A=130 amu. The expected secondary beam rates are of the order of 107-109 pps. The aim of the SPES facility is to deliver high-intensity radioactive-ion beams of neutron-rich nuclei for nuclear physics research, as well as to be an interdisciplinary research center for radioisotope production for medicine and for neutron beams.

  5. The SPES Radioactive Ion Beam facility of INFN

    NASA Astrophysics Data System (ADS)

    de Angelis, G.; Spes Collaboration; Prete, G.; Andrighetto, A.; Manzolaro, M.; Corradetti, S.; Scarpa, D.; Rossignoli, M.; Monetti, A.; Lollo, M.; Calderolla, M.; Vasquez, J.; Zafiropoulos, D.; Sarchiapone, L.; Benini, D.; Favaron, P.; Rigato, M.; Pegoraro, R.; Maniero, D.; Calabretta, L.; Comunian, M.; Maggiore, M.; Lombardi, A.; Piazza, L.; Porcellato, A. M.; Roncolato, C.; Bisoffi, G.; Pisent, A.; Galatà, A.; Giacchini, M.; Bassato, G.; Canella, S.; Gramegna, F.; Valiente, J.; Bermudez, J.; Mastinu, P. F.; Esposito, J.; Wyss, J.; Russo, A.; Zanella, S.

    2015-02-01

    A new Radioactive Ion Beam (RIB) facility (SPES) is presently under construction at the Legnaro National Laboratories of INFN. The SPES facility is based on the ISOL method using an UCx Direct Target able to sustain a power of 10 kW. The primary proton beam is provided by a high current Cyclotron accelerator with energy of 40 MeV and a beam current of 0.2-0.5 mA. Neutron-rich radioactive ions are produced by proton induced fission at an expected fission rate of the order of 1013 fissions per second. After ionization and selection the exotic isotopes are re-accelerated by the ALPI superconducting LINAC at energies of 10A MeV for masses in the region A=130 amu. The expected secondary beam rates are of the order of 107 - 109 pps. Aim of the SPES facility is to deliver high intensity radioactive ion beams of neutron rich nuclei for nuclear physics research as well as to be an interdisciplinary research center for radio-isotopes production for medicine and for neutron beams.

  6. Optical studies of ion-beam synthesized metal alloy nanoparticles

    SciTech Connect

    Magudapathy, P. Srivatsava, S. K.; Gangopadhyay, P.; Amirthapandian, S.; Sairam, T. N.; Panigrahi, B. K.

    2015-06-24

    Au{sub x}Ag{sub 1-x} alloy nanoparticles with tunable surface plasmon resonance (SPR) have been synthesized on a silica glass substrate. A small Au foil on an Ag foil is irradiated as target substrates such that ion beam falls on both Ag foil and Au foils. Silica slides are kept at an angle ∼45° with respect to the metallic foils. While irradiating the metallic foils with 100 keV Ar{sup +} ions, sputtered Au and Ag atoms get deposited on the silica-glass. In this configuration the foils have been irradiated by Ar{sup +} ions to various fluences at room temperature and the sputtered species are collected on silica slides. Formation of Au{sub x}Ag{sub 1-x} nanoparticles has been confirmed from the optical absorption measurements. With respect to the exposure area of Au and Ag foils to the ion beam, the SPR peak position varies from 450 to 500 nm. Green photoluminescence has been observed from these alloy metal nanoparticles.

  7. Modeling of nanocluster formation by ion beam implantation

    SciTech Connect

    Li, Kun-Dar

    2011-08-15

    A theoretical model was developed to investigate the mechanism of the formation of nanoclusters via ion beam implantation. The evolution of nanoclusters, including the nucleation and growth process known as Ostwald ripening, was rebuilt using numerical simulations. The effects of implantation parameters such as the ion energy, ion fluence, and temperature on the morphology of implanted microstructures were also studied through integration with the Monte Carlo Transport of Ions in Matter code calculation for the distribution profiles of implanted ions. With an appropriate ion fluence, a labyrinth-like nanostructure with broad size distributions of nanoclusters formed along the ion implantation range. In a latter stage, a buried layer of implanted impurity developed. With decreasing ion energy, the model predicted the formation of precipitates on the surface. These simulation results were fully consistent with many experimental observations. With increased temperature, the characteristic length and size of nanostructures would increase due to the high mobility. This theoretical model provides an efficient numerical approach for fully understanding the mechanism of the formation of nanoclusters, allowing for the design of ion beam experiments to form specific nanostructures through ion-implantation technology.

  8. An Improved Green's Function for Ion Beam Transport

    NASA Technical Reports Server (NTRS)

    Tweed, J.; Wilson, J. W.; Tripathi, R. K.

    2003-01-01

    Ion beam transport theory allows testing of material transmission properties in the laboratory environment generated by particle accelerators. This is a necessary step in materials development and evaluation for space use. The approximations used in solving the Boltzmann transport equation for the space setting are often not sufficient for laboratory work and those issues are the main emphasis of the present work. In consequence, an analytic solution of the linear Boltzmann equation is pursued in the form of a Green's function allowing flexibility in application to a broad range of boundary value problems. It has been established that simple solutions can be found for the high charge and energy (HZE) by ignoring nuclear energy downshifts and dispersion. Such solutions were found to be supported by experimental evidence with HZE ion beams when multiple scattering was added. Lacking from the prior solutions were range and energy straggling and energy downshift with dispersion associated with nuclear events. Recently, we have found global solutions including these effects providing a broader class of HZE ion solutions.

  9. Simulating Electron Cloud Effects in Heavy-Ion Beams

    SciTech Connect

    Cohen, R.H.; Friedman, A.; Lund, S.W.; Molvik, A.W.; Azevedo, T.; Vay, J.-L.; Stoltz, P.; Veitzer, S.

    2004-08-04

    Stray electrons can be introduced in heavy ion fusion accelerators as a result of ionization of ambient gas or gas released from walls due to halo-ion impact, or as a result of secondary-electron emission. We summarize here results from several studies of electron-cloud accumulation and effects: (1) Calculation of the electron cloud produced by electron desorption from computed beam ion loss; the importance of ion scattering is shown; (2) Simulation of the effect of specified electron cloud distributions on ion beam dynamics. We find electron cloud variations that are resonant with the breathing mode of the beam have the biggest impact on the beam (larger than other resonant and random variations), and that the ion beam is surprisingly robust, with an electron density several percent of the beam density required to produce significant beam degradation in a 200-quadrupole system. We identify a possible instability associated with desorption and resonance with the breathing mode. (3) Preliminary investigations of a long-timestep algorithm for electron dynamics in arbitrary magnetic fields.

  10. An improved Green's function for ion beam transport

    NASA Technical Reports Server (NTRS)

    Tweed, J.; Wilson, J. W.; Tripathi, R. K.

    2004-01-01

    Ion beam transport theory allows testing of material transmission properties in the laboratory environment generated by particle accelerators. This is a necessary step in materials development and evaluation for space use. The approximations used in solving the Boltzmann transport equation for the space setting are often not sufficient for laboratory work and those issues are the main emphasis of the present work. In consequence, an analytic solution of the linear Boltzmann equation is pursued in the form of a Green's function allowing flexibility in application to a broad range of boundary value problems. It has been established that simple solutions can be found for high charge and energy (HZE) ions by ignoring nuclear energy downshifts and dispersion. Such solutions were found to be supported by experimental evidence with HZE ion beams when multiple scattering was added. Lacking from the prior solutions were range and energy straggling and energy downshift with dispersion associated with nuclear events. Recently, we have found global solutions including these effects providing a broader class of HZE ion solutions. c2004 COSPAR. Published by Elsevier Ltd. All rights reserved.

  11. Shadow overlap ion-beam lithography for nanoarchitectures.

    PubMed

    Choi, Yeonho; Hong, Soongweon; Lee, Luke P

    2009-11-01

    Precisely constructed nanoscale devices and nanoarchitectures with high spatial resolution are critically needed for applications in high-speed electronics, high-density memory, efficient solar cells, optoelectronics, plasmonics, optical antennas, chemical sensors, biological sensors, and nanospectroscopic imaging. Current methods of classical optical lithography are limited by the diffraction effect of light for nanolithography, and the state of art of e-beam or focused ion beam lithography limit the throughput and further reduction less than few nanometers for large-area batch fabrication. However, these limits can be surpassed surprisingly by utilizing the overlap of two shadow images. Here we present shadow overlap of ion-beam lithography (SOIL), which can combine the advantages of parallel processing, tunable capability of geometries, cost-effective method, and high spatial resolution nanofabrication technique. The SOIL method relies on the overlap of shadows created by the directional metal deposition and etching angles on prepatterned structures. Consequently, highly tunable patterns can be obtained. As examples, unprecedented nanoarchitectures for optical antennas are demonstrated by SOIL. We expect that SOIL can have a significant impact not only on nanoscale devices, but also large-scale (i.e., micro and macro) three-dimensional innovative lithography.

  12. Ion Beam Analysis applied to laser-generated plasmas

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Macková, A.; Havranek, V.; Malinsky, P.; Torrisi, L.; Kormunda, M.; Barchuk, M.; Ullschmied, J.; Dudzak, R.

    2016-04-01

    This paper presents the research activity on Ion Beam Analysis methods performed at Tandetron Laboratory (LT) of the Institute of Nuclear Physics AS CR, Rez, Czech Republic. Recently, many groups are paying attention to implantation by laser generated plasma. This process allows to insert a controllable amount of energetic ions into the surface layers of different materials modifying the physical and chemical properties of the surface material. Different substrates are implanted by accelerated ions from plasma through terawatt iodine laser, at nominal intensity of 1015 W/cm2, at the PALS Research Infrastructure AS CR, in the Czech Republic. This regime of the laser matter interaction generates, multi-MeV proton beams, and multi-charged ions that are tightly confined in time (hundreds ps) and space (source radius of a few microns). These ion beams have a much lower transverse temperature, a much shorter duration and a much higher current than those obtainable from conventional accelerators. The implementation of protons and ions acceleration driven by ultra-short high intensity lasers is exhibited by adopting suitable irradiation conditions as well as tailored targets. An overview of implanted targets and their morphological and structural characterizations is presented and discussed.

  13. Atomic layer deposition ultrathin film origami using focused ion beams

    NASA Astrophysics Data System (ADS)

    Supekar, O. D.; Brown, J. J.; Eigenfeld, N. T.; Gertsch, J. C.; Bright, V. M.

    2016-12-01

    Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin films into complex 3D structures. FIB of high energy gallium (Ga+) ions induces stress by generation of dislocations and ion implantation within material layers, which create creases or folds upon mechanical relaxation enabled by motion of the material layers. One limitation on such processing is the ability to fabricate flat freestanding thin film structures. This capability is limited by the residual stresses formed during processing and fabrication of the films, which can result in initial curvature and deformation of films upon release from a sacrificial fabrication layer. This paper demonstrates folding in freestanding ultrathin films (<40 nm thin) of heterogeneous composition (metal, insulator, semiconductor, etc) with large lateral dimension structures (aspect ratio >1:1000) by ion-induced stress relaxation. The ultrathin flat structures are fabricated using atomic layer deposition on sacrificial polyimide. We have demonstrated vertical folding with 30 keV Ga+ ions in structures with lateral dimensions varying from 10 to 50 μm.

  14. Atomic layer deposition ultrathin film origami using focused ion beams.

    PubMed

    Supekar, O D; Brown, J J; Eigenfeld, N T; Gertsch, J C; Bright, V M

    2016-12-09

    Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin films into complex 3D structures. FIB of high energy gallium (Ga(+)) ions induces stress by generation of dislocations and ion implantation within material layers, which create creases or folds upon mechanical relaxation enabled by motion of the material layers. One limitation on such processing is the ability to fabricate flat freestanding thin film structures. This capability is limited by the residual stresses formed during processing and fabrication of the films, which can result in initial curvature and deformation of films upon release from a sacrificial fabrication layer. This paper demonstrates folding in freestanding ultrathin films (<40 nm thin) of heterogeneous composition (metal, insulator, semiconductor, etc) with large lateral dimension structures (aspect ratio >1:1000) by ion-induced stress relaxation. The ultrathin flat structures are fabricated using atomic layer deposition on sacrificial polyimide. We have demonstrated vertical folding with 30 keV Ga(+) ions in structures with lateral dimensions varying from 10 to 50 μm.

  15. Advanced techniques for characterization of ion beam modified materials

    DOE PAGES

    Zhang, Yanwen; Debelle, Aurélien; Boulle, Alexandre; ...

    2014-10-30

    Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed in this paper. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiationmore » effects in modified depths ranging from a few nm to a few tens of μm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Finally, such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.« less

  16. Simulation of target response due to uranium ion beam impact

    NASA Astrophysics Data System (ADS)

    Richter, H.; Noah, E.; Aiginger, H.; Poljanc, K.

    2009-12-01

    Metal targets were irradiated at GSI with a highly focused uranium ion beam with a kinetic energy of 350MeV/u. Out of these targets two copper samples, that had been irradiated multiple times with a maximum intensity of 2.36 · 109 , were chosen for simulations. In order to characterize the behavior of the target under the load of the ion beam, FLUKA was used to generate the initial distribution of deposited energy which was in turn used as an input for ANSYS AUTODYN to calculate the dynamic response of the target. In the simulations of the first sample a good approximation of the so-called hydrodynamic tensile limit, the crucial parameter for target failure, was found to be -1.08 GPa. This acquired value was used for the simulation of the second sample which had been irradiated with two high-intensity shots. These simulations resulted in the full penetration of the sample which was in agreement with metallurgical examinations. This paper presents the performed simulations.

  17. Ion beam figuring approach for thermally sensitive space optics.

    PubMed

    Yin, Xiaolin; Deng, Weijie; Tang, Wa; Zhang, Binzhi; Xue, Donglin; Zhang, Feng; Zhang, Xuejun

    2016-10-01

    During the ion beam figuring (IBF) of a space mirror, thermal radiation of the neutral filament and particle collisions will heat the mirror. The adhesive layer used to bond the metal parts and the mirror is very sensitive to temperature rise. When the temperature exceeds the designed value, the mirror surface shape will change markedly because of the thermal deformation and stress release of the adhesive layer, thereby reducing the IBF accuracy. To suppress the thermal effect, we analyzed the heat generation mechanism. By using thermal radiation theory, we established a thermal radiation model of the neutral filament. Additionally, we acquired a surface-type Gaussian heat source model of the ion beam sputtering based on the removal function and Faraday scan result. Using the finite-element-method software ABAQUS, we developed a method that can simulate the thermal effect of the IBF for the full path and all dwell times. Based on the thermal model, which was experimentally confirmed, we simulated the thermal effects for a 675  mm×374  mm rectangular SiC space mirror. By optimizing the dwell time distribution, the peak temperature value of the adhesive layer during the figuring process was reduced under the designed value. After one round of figuring, the RMS value of the surface error changed from 0.094 to 0.015λ (λ=632.8  nm), which proved the effectiveness of the thermal analysis and suppression method.

  18. Temperature measurements during high flux ion beam irradiations

    DOE PAGES

    Crespillo, Miguel L.; Graham, Joseph T.; Zhang, Yanwen; ...

    2016-02-16

    A systematic study of the ion beam heating effect was performed in a temperature range of –170 to 900 °C using a 10 MeV Au3+ ion beam and a Yttria stabilized Zirconia (YSZ) sample at a flux of 5.5 × 1012 cm–2 s–1. Different geometric configurations of beam, sample, thermocouple positioning, and sample holder were compared to understand the heat/charge transport mechanisms responsible for the observed temperature increase. The beam heating exhibited a strong dependence on the background (initial) sample temperature with the largest temperature increases occurring at cryogenic temperatures and decreasing with increasing temperature. Comparison with numerical calculations suggestsmore » that the observed heating effect is, in reality, a predominantly electronic effect and the true temperature rise is small. Furthermore, a simple model was developed to explain this electronic effect in terms of an electrostatic potential that forms during ion irradiation. Such an artificial beam heating effect is potentially problematic in thermostated ion irradiation and ion beamanalysis apparatus, as the operation of temperature feedback systems can be significantly distorted by this effect.« less

  19. Advanced techniques for characterization of ion beam modified materials

    SciTech Connect

    Zhang, Yanwen; Debelle, Aurélien; Boulle, Alexandre; Kluth, Patrick; Tuomisto, Filip

    2014-10-30

    Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed in this paper. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiation effects in modified depths ranging from a few nm to a few tens of μm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Finally, such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.

  20. Features of Fast Ion Instability of Partly Compensated Ion Beams

    NASA Astrophysics Data System (ADS)

    Dudnikov, Vadim

    2000-10-01

    Compensation of a space charge of particle beams by ions have some significant features very different of the electrons compensation. Heavier ions have longer lifetime in the beam and it is possible to reach overcompensation with transformation of repulse forces to the focusing. This feature help to the long distance beam transportation inside a small apertures. But, an ability of heavy ions to keep coherent motion can be a reason of strong coherent instabilities of particle beams with a space charge compensation by ions. A strong coherent focusing of ions in space charge potential of the beam during accumulation can create very high local density of compensating ions with a very picked distribution (Christmas tree distribution). "Fast ion instability" have been observed recently in some storage rings.Very fast development of transverse instability have been observed during a first production of high intense negative ion beam from surface-plasma sources. This instability was observed as oscillation of the local current density of negative ion beam with low fluctuation of beam intensity.

  1. Large areas elemental mapping by ion beam analysis techniques

    NASA Astrophysics Data System (ADS)

    Silva, T. F.; Rodrigues, C. L.; Curado, J. F.; Allegro, P.; Moro, M. V.; Campos, P. H. O. V.; Santos, S. B.; Kajiya, E. A. M.; Rizzutto, M. A.; Added, N.; Tabacniks, M. H.

    2015-07-01

    The external beam line of the Laboratory for Material Analysis with Ion Beams (LAMFI) is a versatile setup for multi-technique analysis. X-ray detectors for Particle Induced X-rays Emission (PIXE) measurements, a Gamma-ray detector for Particle Induced Gamma- ray Emission (PIGE), and a particle detector for scattering analysis, such as Rutherford Backscattering Spectrometry (RBS), were already installed. In this work, we present some results, using a large (60-cm range) XYZ computer controlled sample positioning system, completely developed and build in our laboratory. The XYZ stage was installed at the external beam line and its high spacial resolution (better than 5 μm over the full range) enables positioning the sample with high accuracy and high reproducibility. The combination of a sub-millimeter beam with the large range XYZ robotic stage is being used to produce elemental maps of large areas in samples like paintings, ceramics, stones, fossils, and all sort of samples. Due to its particular characteristics, this is a unique device in the sense of multi-technique analysis of large areas. With the continuous development of the external beam line at LAMFI, coupled to the robotic XYZ stage, it is becoming a robust and reliable option for regular analysis of trace elements (Z > 5) competing with the traditional in-vacuum ion-beam-analysis with the advantage of automatic rastering.

  2. Control of secondary electrons from ion beam impact using a positive potential electrode

    NASA Astrophysics Data System (ADS)

    Crowley, T. P.; Demers, D. R.; Fimognari, P. J.

    2016-11-01

    Secondary electrons emitted when an ion beam impacts a detector can amplify the ion beam signal, but also introduce errors if electrons from one detector propagate to another. A potassium ion beam and a detector comprised of ten impact wires, four split-plates, and a pair of biased electrodes were used to demonstrate that a low-voltage, positive electrode can be used to maintain the beneficial amplification effect while greatly reducing the error introduced from the electrons traveling between detector elements.

  3. Exploring Cryogenic Focused Ion Beam Milling as a Group III-V Device Fabrication Tool

    DTIC Science & Technology

    2013-09-01

    focused ion beam (cryo-FIB) milling as a Group III-V device fabrication tool. Cryogenic cooling of III-V semiconductor material during Ga + FIB irradiation...potential applications of cryogenic focused ion beam (cryo-FIB) milling as a Group III-V device fabrication tool. Cryogenic cooling of III-V semiconductor...sensitivity to the Ga ion beam . This sensitivity is manifested as changes in the structure and chemical composition of the starting material upon exposure to

  4. Shaping of Au nanoparticles embedded in various layered structures by swift heavy ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Dawi, E. A.; ArnoldBik, W. M.; Ackermann, R.; Habraken, F. H. P. M.

    2016-10-01

    We present a novel method to extend the ion-beam induced shaping of metallic nanoparticles in various layered structures. Monodisperse Au nanoparticles having mean diameter of 30 nm and their ion-shaping process is investigated for a limited number of experimental conditions. Au nanoparticles were embedded within a single plane in various layered structures of silicon nitride films (Si3N4), combinations of oxide-nitride films (SiO2-Si3N4) and amorphous silicon films (a-Si) and have been sequentially irradiated at 300 K at normal incidence with 50 and 25 MeV Ag ions, respectively. Under irradiation with heavy Ag ions and with sequential increase of the irradiation fluence, the evolution of the Au peak derived from the Rutherford Backscattering Spectrometry show broadening in Au peak, which indicates that the Au becomes distributed over a larger depth region, indicative of the elongation of the nanoparticles. The latter is observed almost for every layer structure investigated except for Au nanoparticles embedded in pure a-Si matrix. The largest elongation rate at all fluences is found for the Au nanoparticles encapsulated in pure Si3N4 films. For all irradiation energy applied, we again demonstrate the existence of both threshold and saturation fluences for the elongation effects mentioned.

  5. Mechanical Modulation of Phonon-Assisted Field Emission in a Silicon Nanomembrane Detector for Time-of-Flight Mass Spectrometry

    PubMed Central

    Park, Jonghoo; Blick, Robert H.

    2016-01-01

    We demonstrate mechanical modulation of phonon-assisted field emission in a free-standing silicon nanomembrane detector for time-of-flight mass spectrometry of proteins. The impacts of ion bombardment on the silicon nanomembrane have been explored in both mechanical and electrical points of view. Locally elevated lattice temperature in the silicon nanomembrane, resulting from the transduction of ion kinetic energy into thermal energy through the ion bombardment, induces not only phonon-assisted field emission but also a mechanical vibration in the silicon nanomembrane. The coupling of these mechanical and electrical phenomenon leads to mechanical modulation of phonon-assisted field emission. The thermal energy relaxation through mechanical vibration in addition to the lateral heat conduction and field emission in the silicon nanomembrane offers effective cooling of the nanomembrane, thereby allowing high resolution mass analysis. PMID:26861329

  6. Ion beam sputtering of fluoropolymers. [etching polymer films and target surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

  7. Ion assisted deposition of SiO2 film from silicon

    NASA Astrophysics Data System (ADS)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  8. Experimental and theoretical evaluation of the laser-assisted machining of silicon nitride

    NASA Astrophysics Data System (ADS)

    Rozzi, Jay Christopher

    This study focused on the experimental and theoretical evaluation of the laser assisted machining (LAM) of silicon nitride ceramics. A laser assisted machining facility was constructed whose main components consist of a COsb2 laser and a CNC lathe. Surface temperature histories were first measured and compared to a transient, three-dimensional numerical simulation for a rotating silicon nitride workpiece heated by a translating laser for ranges of the workpiece rotational and laser-translation speeds, as well as the laser beam diameter and power. Excellent agreement was obtained between the experimental and predicted temperature histories. Laser assisted machining experiments on silicon nitride ceramic workpieces were completed for a wide range of operating conditions. Data for cutting forces and surface temperature histories illustrated that the lower bound for the avoidance of cutting tool and/or workpiece fracture for LAM is defined by the YSiAlON glass transition temperature (920-970sp°C). As temperatures near the cutting tool increase to values above the glass transition temperature range, the glassy phase softened, facilitating plastic deformation and, correspondingly, the production of semi-continuous or continuous chips. The silicon nitride machined workpiece surface roughness (Rsb{a}=0.39\\ mum) for LAM at the nominal operating condition was nearly equivalent to a value associated with the grinding of silicon nitride using a diamond wheel (Rsb{a}=0.2\\ mum). By examining the machined surfaces and chips, it was shown that LAM does not produce detectable sub-surface cracking or significant silicon nitride microstructure alteration, respectively. A transient, three-dimensional numerical heat transfer model of laser assisted machining was constructed, which includes a preheat phase and material removal, with the associated changes in the workplace geometry. Excellent agreement was obtained between the measured and predicted temperature histories. The strong

  9. Electron transfer during metal-assisted and stain etching of silicon

    NASA Astrophysics Data System (ADS)

    Kolasinski, Kurt W.

    2016-01-01

    The etching of silicon in fluoride solutions is limited by the kinetics of charge transfer not thermodynamics. This characteristic is what gives fluoride etching its great versatility in making different types of nanostructures as the result of self-limiting chemistry. This review approaches the kinetics of electron transfer from silicon and metal-coated silicon to a solution phase species from a fundamental point of view in order to establish a better understanding of the mechanisms of nanostructure formation during metal-assisted and stain etching of silicon. Band bending calculations demonstrate that diffusion of holes away from low work function metals such as Ag is not possible. Similarly diffusion of holes outside of the space charge layer is not possible for high work function metals such as Au, Pd and Pt. While direct hole injection may be important for etch track pore formation in the immediate vicinity of the metal, the charge imbalance on or near the metal causes the metal to act like a nanopower supply that polarizes the surrounding Si. This second mechanism is implicated in nonlocal etching of Si during metal-assisted etching.

  10. The use of an ion-beam source to alter the surface morphology of biological implant materials

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.

    1978-01-01

    An electron-bombardment ion-thruster was used as a neutralized-ion-beam sputtering source to texture the surfaces of biological implant materials. The materials investigated included 316 stainless steel; titanium-6% aluminum, 4% vanadium; cobalt-20% chromium, 15% tungsten; cobalt-35% nickel, 20% chromium, 10% molybdenum; polytetrafluoroethylene; polyoxymethylene; silicone and polyurethane copolymer; 32%-carbon-impregnated polyolefin; segmented polyurethane; silicone rubber; and alumina. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion-texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion-textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion-textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane have been obtained.

  11. Effect of using stencil masks made by focused ion beam milling on permalloy (Ni81Fe19) nanostructures.

    PubMed

    Bates, J R; Miyahara, Y; Burgess, J A J; Iglesias-Freire, O; Grütter, P

    2013-03-22

    Focused ion beam (FIB) milling is a common fabrication technique to make nanostencil masks which has the unintended consequence of gallium ion implantation surrounding milled features in silicon nitride membranes. We observe major changes in film structure, chemical composition, and magnetic behaviour of permalloy nanostructures deposited by electron beam evaporation using silicon nitride stencil masks made by a FIB as compared to stencil masks made by regular lithography techniques. We characterize the stenciled structures and both types of masks using transmission electron microscopy, electron energy loss spectroscopy, energy dispersive x-ray spectroscopy, magnetic force microscopy and kelvin probe force microscopy. All these techniques demonstrate distinct differences at a length scale of a 1-100 nm for the structures made using stencil mask fabricated using a FIB. The origin of these differences seems to be related to the presence of implanted ions, a detailed understanding of the mechanism however remains to be developed.

  12. Synthesis of silicon carbide nanowires in a catalyst-assisted process

    NASA Astrophysics Data System (ADS)

    Deng, S. Z.; Wu, Z. S.; Zhou, Jun; Xu, N. S.; Chen, Jian; Chen, Jun

    2002-04-01

    At elevated temperatures, silicon carbide nanowires were synthesized in a catalyst-assisted process using aluminum as a catalyst. Transmission electron microscopy shows that the nanowires are around 20 nm in diameter and around 2 μm in length. High resolution transmission electron microscopy shows that the nanowires are crystalline β-SiC. Raman spectra show the typical features of nano-SiC. A model based on vapor-liquid-solid process is proposed to explain our finding.

  13. Beam-deposited platinum as versatile catalyst for bottom-up silicon nanowire synthesis

    SciTech Connect

    Hibst, N.; Strehle, S.; Knittel, P.; Kranz, C.; Mizaikoff, B.

    2014-10-13

    The controlled localized bottom-up synthesis of silicon nanowires on arbitrarily shaped surfaces is still a persisting challenge for functional device assembly. In order to address this issue, electron beam and focused ion beam-assisted catalyst deposition have been investigated with respect to platinum expected to form a PtSi alloy catalyst for a subsequent bottom-up nanowire synthesis. The effective implementation of pure platinum nanoparticles or thin films for silicon nanowire growth has been demonstrated recently. Beam-deposited platinum contains significant quantities of amorphous carbon due to the organic precursor and gallium ions for a focused ion beam-based deposition process. Nevertheless, silicon nanowires could be grown on various substrates regardless of the platinum purity. Additionally, p-type doping could be realized with diborane whereas n-type doping suppressed a nanowire growth. The rational utilization of this beam-assisted approach enables us to control the localized synthesis of single silicon nanowires at planar surfaces but succeeded also in single nanowire growth at the three-dimensional apex of an atomic force microscopy tip. Therefore, this catalyst deposition method appears to be a unique extension of current technologies to assemble complex nanowire-based devices.

  14. Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Liu, Ruiyuan; Zhang, Fute; Con, Celal; Cui, Bo; Sun, Baoquan

    2013-04-01

    We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution.

  15. A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells

    NASA Astrophysics Data System (ADS)

    Misra, Soumyadeep; Yu, Linwei; Chen, Wanghua; Foldyna, Martin; Cabarrocas, Pere Roca i.

    2014-10-01

    Incorporation of nanostructures is a recent trend in the photovoltaic community, aimed at improving light absorption and consequently cell efficiency. In this regard, semiconductor nanowires provide an attractive research platform for a new generation of cost-effective and efficient solar cells. Thanks to their unique geometry, silicon nanowires enhance light trapping and anti-reflection effects by means of multiple scattering between individual nanowires, and by coupling the light into confined eigenmodes over a broad range of the solar spectrum. Moreover, radial junction solar cells built around nanowires decouple the light absorption and carrier collection directions, which allows for a higher internal field and better carrier collection. Thus, arrays of radial junction solar cells bring advantages of high efficiency with reduced material amount. This is particularly attractive for devices based on hydrogenated amorphous and microcrystalline silicon thin films. In this paper, after reviewing different approaches to fabricate silicon nanowires, we focus on nanowires grown using the plasma-assisted vapour-liquid-solid method because of the simplicity and compatibility with current silicon thin-film technology. Their application to a-Si : H based radial junction solar cells has already resulted in ˜8% of stable devices with an absorber layer thickness of only 100 nm. Moreover, current challenges and perspectives such as the use of a microcrystalline silicon absorber are also reviewed.

  16. Reduction of Glass Surface Reflectance by Ion Beam Surface Modification

    SciTech Connect

    Mark Spitzer

    2011-03-11

    This is the final report for DOE contract DE-EE0000590. The purpose of this work was to determine the feasibility of the reduction of the reflection from the front of solar photovoltaic modules. Reflection accounts for a power loss of approximately 4%. A solar module having an area of one square meter with an energy conversion efficiency of 18% generates approximately 180 watts. If reflection loss can be eliminated, the power output can be increased to 187 watts. Since conventional thin-film anti-reflection coatings do not have sufficient environmental stability, we investigated the feasibility of ion beam modification of the glass surface to obtain reduction of reflectance. Our findings are generally applicable to all solar modules that use glass encapsulation, as well as commercial float glass used in windows and other applications. Ion implantation of argon, fluorine, and xenon into commercial low-iron soda lime float glass, standard float glass, and borosilicate glass was studied by implantation, annealing, and measurement of reflectance. The three ions all affected reflectance. The most significant change was obtained by argon implantation into both low-iron and standard soda-lime glass. In this way samples were formed with reflectance lower than can be obtained with a single-layer coatings of magnesium fluoride. Integrated reflectance was reduced from 4% to 1% in low-iron soda lime glass typical of the glass used in solar modules. The reduction of reflectance of borosilicate glass was not as large; however borosilicate glass is not typically used in flat plate solar modules. Unlike conventional semiconductor ion implantation doping, glass reflectance reduction was found to be tolerant to large variations in implant dose, meaning that the process does not require high dopant uniformity. Additionally, glass implantation does not require mass analysis. Simple, high current ion implantation equipment can be developed for this process; however, before the process

  17. Electrostatic dispersion lenses and ion beam dispersion methods

    DOEpatents

    Dahl, David A [Idaho Falls, ID; Appelhans, Anthony D [Idaho Falls, ID

    2010-12-28

    An EDL includes a case surface and at least one electrode surface. The EDL is configured to receive through the EDL a plurality of ion beams, to generate an electrostatic field between the one electrode surface and either the case surface or another electrode surface, and to increase the separation between the beams using the field. Other than an optional mid-plane intended to contain trajectories of the beams, the electrode surface or surfaces do not exhibit a plane of symmetry through which any beam received through the EDL must pass. In addition or in the alternative, the one electrode surface and either the case surface or the other electrode surface have geometries configured to shape the field to exhibit a less abrupt entrance and/or exit field transition in comparison to another electrostatic field shaped by two nested, one-quarter section, right cylindrical electrode surfaces with a constant gap width.

  18. Ion beam modification of topological insulator bismuth selenide

    NASA Astrophysics Data System (ADS)

    Sharma, P. A.; Lima Sharma, A. L.; Hekmaty, M.; Hattar, K.; Stavila, V.; Goeke, R.; Erickson, K.; Medlin, D. L.; Brahlek, M.; Koirala, N.; Oh, S.

    2014-12-01

    We demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi2Se3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi2Se3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

  19. Adhesive bonding of ion beam textured metals and fluoropolymers

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Sovey, J. S.

    1978-01-01

    An electron bombardment argon ion source was used to ion etch various metals and fluoropolymers. The metal and fluoropolymers were exposed to (0.5 to 1.0) keV Ar ions at ion current densities of (0.2 to 1.5) mA/sq cm for various exposure times. The resulting surface texture is in the form of needles or spires whose vertical dimensions may range from tenths to hundreds of micrometers, depending on the selection of beam energy, ion current density, and etch time. The bonding of textured surfaces is accomplished by ion beam texturing mating pieces of either metals or fluoropolymers and applying a bonding agent which wets in and around the microscopic cone-like structures. After bonding, both tensile and shear strength measurements were made on the samples. Also tested, for comparison's sake, were untextured and chemically etched fluoropolymers. The results of these measurements are presented.

  20. Electrostatic lens to focus an ion beam to uniform density

    DOEpatents

    Johnson, Cleland H.

    1977-01-11

    A focusing lens for an ion beam having a gaussian or similar density profile is provided. The lens is constructed to provide an inner zero electrostatic field, and an outer electrostatic field such that ions entering this outer field are deflected by an amount that is a function of their distance from the edge of the inner field. The result is a beam that focuses to a uniform density in a manner analogous to that of an optical ring lens. In one embodiment, a conically-shaped network of fine wires is enclosed within a cylindrical anode. The wire net together with the anode produces a voltage field that re-directs the outer particles of the beam while the axial particles pass undeflected through a zero field inside the wire net. The result is a focused beam having a uniform intensity over a given target area and at a given distance from the lens.

  1. Magnetic strip patterns induced by focused ion beam irradiation

    SciTech Connect

    Makarov, D.; Tibus, S.; Rettner, C. T.; Thomson, T.; Terris, B. D.; Schrefl, T.; Albrecht, M.

    2008-03-15

    Focused ion beam exposure was used to locally alter the magnetic properties of a continuous Co/Pd multilayer film with perpendicular magnetic anisotropy. The saturation magnetization, coercivity, and magnetic anisotropy of the films can be tuned by Ga irradiation depending on exposure dose. As a result, a periodic strip pattern consisting of 80 nm wide exposed strips which are magnetically soft, separated by 170 nm wide magnetically hard, unexposed areas was created. Due to strong magnetostatic coupling between the strips, a number of magnetic domain configurations could be stabilized and these have been observed by magnetic force microscopy and magneto-optic Kerr effect measurements. The magnetic domain configurations and their reversal behavior were investigated by micromagnetic simulations as a function of exposure dose and strip period.

  2. Ion beam induced luminescence analysis of painting pigments

    NASA Astrophysics Data System (ADS)

    Quaranta, A.; Salomon, J.; Dran, J. C.; Tonezzer, M.; Della Mea, G.

    2007-01-01

    Ion beam induced luminescence (IBIL) has been exploited for the first time in the analysis of inorganic painting pigments. The elemental constituents of the different compounds have been determined by particle induced X-ray emission (PIXE). The acquisition time of each spectrum ranges from 100 ms to a few seconds, depending on the luminescence intensity. The luminescence features are fingerprints of the different compounds, thus identifying the provenience of pigments of the same nominal composition. Organic varnish layers do not affect the IBIL features, allowing the identification of pigments, like lapis-lazuli, whose identification with PIXE is hindered by the varnish. IBIL proved to be a technique complementary to PIXE in the archeometry and cultural heritage analysis fields.

  3. Ion beam modification of topological insulator bismuth selenide

    SciTech Connect

    Sharma, P. A. Lima Sharma, A. L.; Hattar, K.; Goeke, R.; Hekmaty, M.; Stavila, V.; Erickson, K.; Medlin, D. L.; Brahlek, M.; Koirala, N.; Oh, S.

    2014-12-15

    We demonstrate chemical doping of a topological insulator Bi{sub 2}Se{sub 3} using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi{sub 2}Se{sub 3} thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi{sub 2}Se{sub 3}, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

  4. Ion beam modification of topological insulator bismuth selenide

    SciTech Connect

    Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; Hattar, Khalid Mikhiel; Stavila, Vitalie; Goeke, Ronald S.; Erickson, K.; Medlin, Douglas L.; Brahlek, M.; Oh, S.; Koirala, N.

    2014-12-17

    In this study, we demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi2Se3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi2Se3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

  5. Ion beam modification of topological insulator bismuth selenide

    DOE PAGES

    Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; ...

    2014-12-17

    In this study, we demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi2Se3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi2Se3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations formore » the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.« less

  6. High power target approaches for intense radioactive ion beam facilities

    SciTech Connect

    Talbert, W.L. ||; Hodges, T.A.; Hsu, H.; Fikani, M.M.

    1997-02-01

    Development of conceptual approaches for targets to produce intense radioactive ion beams is needed in anticipation of activity for a next-generation, intense ISOL-type radioactive beams facility, strongly recommended in the NSAC 1995 Long Range Plan for Nuclear Science. The production of isotopes in vapor form for subsequent mass separation and acceleration will depend on the ability to control target temperature profiles within the target resulting from interactions of the intense production beams with the target material. A number of earlier studies have identified promising approaches which need, however, to be carefully analyzed for specific target systems. A survey will be made of these earlier concepts employing various cooling techniques, including imposition of thermal barriers between the target materials and cooling systems. Some results of preliminary analyses are summarized. {copyright} {ital 1997 American Institute of Physics.}

  7. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    PubMed

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

  8. Computational study of ion beam extraction phenomena through multiple apertures

    SciTech Connect

    Hu, Wanpeng; Sang, Chaofeng; Tang, Tengfei; Wang, Dezhen; Li, Ming; Jin, Dazhi; Tan, Xiaohua

    2014-03-15

    The process of ion extraction through multiple apertures is investigated using a two-dimensional particle-in-cell code. We consider apertures with a fixed diameter with a hydrogen plasma background, and the trajectories of electrons, H{sup +} and H{sub 2}{sup +} ions in the self-consistently calculated electric field are traced. The focus of this work is the fundamental physics of the ion extraction, and not particular to a specific device. The computed convergence and divergence of the extracted ion beam are analyzed. We find that the extracted ion flux reaching the extraction electrode is non-uniform, and the peak flux positions change according to operational parameters, and do not necessarily match the positions of the apertures in the y-direction. The profile of the ion flux reaching the electrode is mainly affected by the bias voltage and the distance between grid wall and extraction electrode.

  9. Nanopatterning of swinging substrates by ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Yoon, Sun Mi; Kim, J.-S.

    2016-05-01

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  10. Nanostructured Arrays Formed by Finely Focused Ion Beams

    SciTech Connect

    Budai, J.D.; Datsos, P.G.; Feldman, L.C.; Heinig, K.-H.; Meldrum, A.; Strobel, M.; Thomas, K.A.; Warmack, R.J.; White, C.W.; Zuhr, R.A.

    1998-11-30

    Amorphous, polycrystalline, and single crystal nanometer dimension particles can be formed in a variety of substrates by ion implantation and subsequent annealing. Such composite colloidal materials exhibit unique optical properties that could be useful in optical devices, switches, and waveguides. However colloids formed by blanket implantation are not uniform in size due to the nonuniform density of the implant, resulting in diminution of the size dependent optical properties. The object of the present work is to form more uniform size particles arranged in a 2-dimensional lattice by using a finely focused ion beam to implant identical ion doses only into nanometer size regions located at each point of a rectangular lattice. Initial work is being done with a 30 keV Ga beam implanted into Si. Results of particle formation as a function of implant conditions as analyzed by Rutherford backscattering, x-ray analysis, atomic force microscopy, and both scanning and transmission electron microscopy will be presented and discussed.

  11. Ion beam collimating grid to reduce added defects

    DOEpatents

    Lindquist, Walter B.; Kearney, Patrick A.

    2003-01-01

    A collimating grid for an ion source located after the exit grid. The collimating grid collimates the ion beamlets and disallows beam spread and limits the beam divergence during transients and steady state operation. The additional exit or collimating grid prevents beam divergence during turn-on and turn-off and prevents ions from hitting the periphery of the target where there is re-deposited material or from missing the target and hitting the wall of the vessel where there is deposited material, thereby preventing defects from being deposited on a substrate to be coated. Thus, the addition of a collimating grid to an ion source ensures that the ion beam will hit and be confined to a specific target area.

  12. Transition from heating to cooling of channeled ion beams

    SciTech Connect

    Toepffer, Christian

    2006-06-15

    Experiments showing a transverse heating or cooling of channeled ion beams are explained in terms of electron capture and loss processes between the projectile ions and the target. Such processes violate reversibility as the projectile captures electrons from occupied bound states and loses them to unoccupied weakly bound or continuum states. The transition probabilities for the transfer of electrons are calculated in the impact parameter Born approximation. Their dependence on the distance from the crystal strings is determined by scale factors which depend in turn on the relative velocity and the binding energies of the transferred electrons in the projectile and in the crystal, respectively. The appearance of transverse heating and cooling depends on the relative size of the scale factors for capture and loss. The transition from heating to cooling as function of velocity is described in good agreement with the experiments.

  13. Pre-formed plasma channels for ion beam fusion

    NASA Astrophysics Data System (ADS)

    Peterson, R. R.; Olson, C. L.

    1997-04-01

    The transport of driver ions to the target in an IFE power plant is an important consideration in IFE target chamber design. Pre-formed laser-guided plasma discharge channels have been considered for light ions because they reduce the beam microdivergence constraints, allow long transport lengths, and require a target chamber fill gas that can help protect the target chamber from the target explosion. Here, pre-formed plasma discharge channels are considered for heavy ion transport. The channel formation parameters are similar to those for light ions. The allowable ion power per channel is limited by the onset of plasma instabilities and energy loss due to a reverse emf from the rapid channel expansion driven by the ion beam.

  14. Chemically Induced Phase Transformation in Austenite by Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Basa, Adina; Thaulow, Christian; Barnoush, Afrooz

    2013-11-01

    A highly stable austenite phase in a super duplex stainless steel was subjected to a combination of different gallium ion doses at different acceleration voltages. It was shown that contrary to what is expected, an austenite to ferrite phase transformation occurred within the focused ion beam (FIB) milled regions. Chemical analysis of the FIB milled region proved that the gallium implantation preceded the FIB milling. High resolution electron backscatter diffraction analysis also showed that the phase transformation was not followed by the typical shear and plastic deformation expected from the martensitic transformation. On the basis of these observations, it was concluded that the change in the chemical composition of the austenite and the local increase in gallium, which is a ferrite stabilizer, results in the local selective transformation of austenite to ferrite.

  15. METHOD OF PRODUCING AND ACCELERATING AN ION BEAM

    NASA Technical Reports Server (NTRS)

    Foster, John E. (Inventor)

    2005-01-01

    A method of producing and accelerating an ion beam comprising the steps of providing a magnetic field with a cusp that opens in an outward direction along a centerline that passes through a vertex of the cusp: providing an ionizing gas that sprays outward through at least one capillary-like orifice in a plenum that is positioned such that the orifice is on the centerline in the cusp, outward of the vortex of the cusp; providing a cathode electron source, and positioning it outward of the orifice and off of the centerline; and positively charging the plenum relative to the cathode electron source such that the plenum functions as m anode. A hot filament may be used as the cathode electron source, and permanent magnets may be used to provide the magnetic field.

  16. Texture coefficient analysis of ion beam irradiated copper nanowires

    NASA Astrophysics Data System (ADS)

    Rana, Pallavi; Chaudhary, Ritika; Chauhan, R. P.

    2016-05-01

    Radiation may deteriorate physical properties of the materials and leave negative as well as positive impacts especially on crystalline materials. The energy deposited by ions to the grains and grain boundaries could also influence other properties of grains like: strain, reflection of charge carriers from grain boundaries, in addition to their grain size and orientation. The intensity of a peak in the XRD spectra is the direct reflection of orientation of a miller plane in the crystal. The increased intensity symbolizes the crystalline behavior due to defects annealing, while decreased intensity portray the defects formation and slender amorphisation. Orientation distribution function is a probability distribution function that quantified the texture of a polycrystalline material. The coefficients of harmonic expansion of orientation distribution function is the measurement of the texture coefficient `TC'. This study focused on the investigation of effect of ion beam irradiation on the preffered orientation of the planes of copper nanowires.

  17. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  18. Deposition and surface treatment with intense pulsed ion beams

    SciTech Connect

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J.; Stinnett, R.W.; McIntyre, D.C.

    1995-02-08

    Intense pulsed ion beams (500 keV, 30 kA, 0.5 {mu}s) are being investigated for materials processing. Demonstrated and potential applications include film deposition, glazing and joining, alloying and mixing, cleaning and polishing, corrosion improvement, polymer surface treatments, and nanophase powder synthesis. Initial experiments at Los Alamos have emphasized thin-film formation by depositing beam ablated target material on substrates. We have deposited films with complex stoichiometry such as YBa{sub 2}Cu{sub 3}O{sub 7-x}, and formed diamond-like-carbon films. Instantaneous deposition rates of 1 mm/sec have been achieved because of the short ion range (typically 1{mu}m), excellent target coupling, and the inherently high energy of these beams. Currently the beams are produced in single shot uncomplicated diodes with good electrical efficiency. High-voltage modulator technology and diodes capable of repetitive firing, needed for commercial application, are being developed.

  19. INERTIAL FUSION DRIVEN BY INTENSE HEAVY-ION BEAMS

    SciTech Connect

    Sharp, W. M.; Friedman, A.; Grote, D. P.; Barnard, J. J.; Cohen, R. H.; Dorf, M. A.; Lund, S. M.; Perkins, L. J.; Terry, M. R.; Logan, B. G.; Bieniosek, F. M.; Faltens, A.; Henestroza, E.; Jung, J. Y.; Kwan, J. W.; Lee, E. P.; Lidia, S. M.; Ni, P. A.; Reginato, L. L.; Roy, P. K.; Seidl, P. A.; Takakuwa, J. H.; Vay, J.-L.; Waldron, W. L.; Davidson, R. C.; Gilson, E. P.; Kaganovich, I. D.; Qin, H.; Startsev, E.; Haber, I.; Kishek, R. A.; Koniges, A. E.

    2011-03-31

    Intense heavy-ion beams have long been considered a promising driver option for inertial-fusion energy production. This paper briefly compares inertial confinement fusion (ICF) to the more-familiar magnetic-confinement approach and presents some advantages of using beams of heavy ions to drive ICF instead of lasers. Key design choices in heavy-ion fusion (HIF) facilities are discussed, particularly the type of accelerator. We then review experiments carried out at Lawrence Berkeley National Laboratory (LBNL) over the past thirty years to understand various aspects of HIF driver physics. A brief review follows of present HIF research in the US and abroad, focusing on a new facility, NDCX-II, being built at LBNL to study the physics of warm dense matter heated by ions, as well as aspects of HIF target physics. Future research directions are briefly summarized.

  20. Diagnostic studies of ion beam formation in inductively coupled plasma

    SciTech Connect

    Jacobs, Jenee L.

    2015-01-01

    This dissertation describes a variety of studies focused on the plasma and the ion beam in inductively coupled plasma mass spectrometry (ICP-MS). The ability to use ICP-MS for measurements of trace elements in samples requires the analytes to be efficiently ionized. Updated ionization efficiency tables are discussed for ionization temperatures of 6500 K and 7000 K with an electron density of 1 x 1015 cm-3. These values are reflective of the current operating parameters of ICP-MS instruments. Calculations are also discussed for doubly charged (M2+) ion formation, neutral metal oxide (MO) ionization, and metal oxide (MO+) ion dissociation for similar plasma temperature values. Ionization efficiency results for neutral MO molecules in the ICP have not been reported previously.