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Sample records for irradiated silicon carbide

  1. Neutron irradiation induced amorphization of silicon carbide

    SciTech Connect

    Snead, L.L.; Hay, J.C.

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  2. Stored energy in irradiated silicon carbide

    SciTech Connect

    Snead, L.L.; Burchell, T.D.

    1997-04-01

    This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary review is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.

  3. Neutron irradiation induced amorphization of silicon carbide

    NASA Astrophysics Data System (ADS)

    Snead, L. L.; Hay, J. C.

    1999-07-01

    This paper provides the properties of bulk stoichiometric silicon carbide which has been amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60°C to a total fast neutron fluence of 2.6 × 10 25 n/m 2. Amorphization was seen in both materials as evidenced by TEM, electron diffraction and X-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the amorphized CVD SiC. Using measured thermal conductivity data for the CVD SiC sample, the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than ˜125°C.

  4. Evaluation of Neutron Irradiated Silicon Carbide and Silicon Carbide Composites

    SciTech Connect

    Newsome G, Snead L, Hinoki T, Katoh Y, Peters D

    2007-03-26

    The effects of fast neutron irradiation on SiC and SiC composites have been studied. The materials used were chemical vapor deposition (CVD) SiC and SiC/SiC composites reinforced with either Hi-Nicalon{trademark} Type-S, Hi-Nicalon{trademark} or Sylramic{trademark} fibers fabricated by chemical vapor infiltration. Statistically significant numbers of flexural samples were irradiated up to 4.6 x 10{sup 25} n/m{sup 2} (E>0.1 MeV) at 300, 500 and 800 C in the High Flux Isotope Reactor at Oak Ridge National Laboratory. Dimensions and weights of the flexural bars were measured before and after the neutron irradiation. Mechanical properties were evaluated by four point flexural testing. Volume increase was seen for all bend bars following neutron irradiation. Magnitude of swelling depended on irradiation temperature and material, while it was nearly independent of irradiation fluence over the fluence range studied. Flexural strength of CVD SiC increased following irradiation depending on irradiation temperature. Over the temperature range studied, no significant degradation in mechanical properties was seen for composites fabricated with Hi-Nicalon{trademark} Type-S, while composites reinforced with Hi-Nicalon{trademark} or Sylramic fibers showed significant degradation. The effects of irradiation on the Weibull failure statistics are also presented suggesting a reduction in the Weibull modulus upon irradiation. The cause of this potential reduction is not known.

  5. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans, Jim; Cetiner, Nesrin; McDuffee, Joel

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  6. Irradiation and annealing of p-type silicon carbide

    SciTech Connect

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P.; Kozlovski, Vitaly V.

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  7. Crystallization of silicon carbide thin films by pulsed laser irradiation

    NASA Astrophysics Data System (ADS)

    De Cesare, G.; La Monica, S.; Maiello, G.; Masini, G.; Proverbio, E.; Ferrari, A.; Chitica, N.; Dinescu, M.; Alexandrescu, R.; Morjan, I.; Rotiu, E.

    1996-10-01

    Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers. The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser. The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment.

  8. Threshold irradiation dose for amorphization of silicon carbide

    SciTech Connect

    Snead, L.L.; Zinkle, S.J.

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  9. USE OF SILICON CARBIDE MONITORS IN ATR IRRADIATION TESTING

    SciTech Connect

    K. L. Davis; B. Chase; T. Unruh; D. Knudson; J. L. Rempe

    2012-07-01

    In April 2007, the Department of Energy (DOE) designated the Advanced Test Reactor (ATR) a National Scientific User Facility (NSUF) to advance US leadership in nuclear science and technology. By attracting new users from universities, laboratories, and industry, the ATR will support basic and applied nuclear research and development and help address the nation's energy security needs. In support of this new program, the Idaho National Laboratory (INL) has developed in-house capabilities to fabricate, test, and qualify new and enhanced temperature sensors for irradiation testing. Although most efforts emphasize sensors capable of providing real-time data, selected tasks have been completed to enhance sensors provided in irradiation locations where instrumentation leads cannot be included, such as drop-in capsule and Hydraulic Shuttle Irradiation System (HSIS) or 'rabbit' locations. For example, silicon carbide (SiC) monitors are now available to detect peak irradiation temperatures between 200°C and 800°C. Using a resistance measurement approach, specialized equipment installed at INL's High Temperature Test Laboratory (HTTL) and specialized procedures were developed to ensure that accurate peak irradiation temperature measurements are inferred from SiC monitors irradiated at the ATR. Comparison examinations were completed by INL to demonstrate this capability, and several programs currently rely on SiC monitors for peak temperature detection. This paper discusses the use of SiC monitors at the ATR, the process used to evaluate them at the HTTL, and presents representative measurements taken using SiC monitors.

  10. FTIR study of silicon carbide amorphization by heavy ion irradiations

    NASA Astrophysics Data System (ADS)

    Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

    2017-03-01

    We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C-SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C-SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

  11. Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

    NASA Astrophysics Data System (ADS)

    Ochedowski, Oliver; Osmani, Orkhan; Schade, Martin; Bussmann, Benedict Kleine; Ban-D'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

    2014-06-01

    The controlled creation of defects in silicon carbide represents a major challenge. A well-known and efficient tool for defect creation in dielectric materials is the irradiation with swift (Ekin≥500 keV/amu) heavy ions, which deposit a significant amount of their kinetic energy into the electronic system. However, in the case of silicon carbide, a significant defect creation by individual ions could hitherto not be achieved. Here we present experimental evidence that silicon carbide surfaces can be modified by individual swift heavy ions with an energy well below the proposed threshold if the irradiation takes place under oblique angles. Depending on the angle of incidence, these grooves can span several hundreds of nanometres. We show that our experimental data are fully compatible with the assumption that each ion induces the sublimation of silicon atoms along its trajectory, resulting in narrow graphitic grooves in the silicon carbide matrix.

  12. Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation.

    PubMed

    Ochedowski, Oliver; Osmani, Orkhan; Schade, Martin; Bussmann, Benedict Kleine; Ban-d'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

    2014-06-06

    The controlled creation of defects in silicon carbide represents a major challenge. A well-known and efficient tool for defect creation in dielectric materials is the irradiation with swift (E(kin) ≥ 500 keV/amu) heavy ions, which deposit a significant amount of their kinetic energy into the electronic system. However, in the case of silicon carbide, a significant defect creation by individual ions could hitherto not be achieved. Here we present experimental evidence that silicon carbide surfaces can be modified by individual swift heavy ions with an energy well below the proposed threshold if the irradiation takes place under oblique angles. Depending on the angle of incidence, these grooves can span several hundreds of nanometres. We show that our experimental data are fully compatible with the assumption that each ion induces the sublimation of silicon atoms along its trajectory, resulting in narrow graphitic grooves in the silicon carbide matrix.

  13. Low Temperature Hall Measurements of Neutron Irradiated Silicon Carbide

    DTIC Science & Technology

    2004-03-01

    general programming interface bus (GPIB). Table 3: Equipment List for Keithley System 110 Make Model Name Keithley 617 Electrometer Keithley 196 Voltmeter...concentration with temperature as measured by the S110 system . Theory models the temperature dependence of carrier concentration as an exponential. 44 y = 8E+16x...Penney Model of Conduction ........................................................................ 7 Silicon Carbide

  14. Flexural strength of proof-tested and neutron-irradiated silicon carbide

    NASA Astrophysics Data System (ADS)

    Price, R. J.; Hopkins, G. R.

    1982-08-01

    Proof testing before service is a valuable method for ensuring the reliability of ceramic structures. Silicon carbide has been proposed as a very low activation first-wall and blanket structural material for fusion devices, where it would experience a high flux of fast neutrons. Strips of three types of silicon carbide were loaded in four-point bending to a stress sufficient to break about a third of the specimens. Groups of 16 survivors were irradiated to 2 × 10 26n/ m2 ( E>0.05 MeV) at 740°C and bend tested to failure. The strength distribution of chemically vapor-deposited silicon carbide (Texas Instruments) was virtually unchanged by irradiation. The mean strength of sintered silicon carbide (Carborundum Alpha) was reduced 34% by irradiation, while the Weibull modulus and the truncated strength distribution characteristic of proof-tested material were retained. Irradiation reduced the mean strength of reaction-bonded silicon carbide (Norton NC-430) by 58%, and the spread in strength values was increased. We conclude that for the chemically vapor-deposited and the sintered silicon carbide the benefits of proof testing to eliminate low strength material are retained after high neutron exposures.

  15. Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

    SciTech Connect

    Koyanagi, Takaaki; Shimoda, Kazuya; Kondo, Sosuke; Hinoki, Tatsuya; Ozawa, Kazumi; Katoh, Yutai

    2014-12-01

    The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. Microstructural observation and data analysis were performed.

  16. Silicon carbide

    SciTech Connect

    Ault, N.N.; Crowe, J.T. )

    1991-05-01

    This paper reports that, since silicon carbide (SiC) does not occur in nature, it must be synthesized by a high-temperature chemical reaction. The first commercial production began at the end of the 19th century when Acheson developed a process of reacting sand and coke in a resistance furnace. This process is still the basic SiC manufacturing process used today. High-quality silica sand (99.5% SiO{sub 2}), low-sulfur petroleum coke, and electricity (23.8 MJ/kg) are the major ingredients in the production of SiC. The reaction takes place in a trough-like furnace with a removable refractory side (or some similar configuration) and with permanent refractory ends holding carbon electrodes. When the furnace is started, the carbon electrodes are joined by the graphite core laid the length of the furnace near the center of the mixture which fills the furnace.

  17. Microstructures of beta silicon carbide after irradiation creep deformation at elevated temperatures

    SciTech Connect

    Katoh, Yutai; Kondo, Sosuke; Snead, Lance Lewis

    2008-01-01

    Microstructures of silicon carbide were examined by transmission electron microscopy (TEM) after creep deformation under neutron irradiation. Thin strip specimens of polycrystalline and monocrystalline, chemically vapor-deposited, beta-phase silicon carbide were irradiated in the high flux isotope reactor to 0.7-4.2 dpa at nominal temperatures of 640-1080 C in an elastically pre-strained bend stress relaxation configuration with the initial stress of {approx}100 MPa. Irradiation creep caused permanent strains of 0.6 to 2.3 x 10{sup -4}. Tensile-loaded near-surface portions of the crept specimens were examined by TEM. The main microstructural features observed were dislocation loops in all samples, and appeared similar to those observed in samples irradiated in non-stressed conditions. Slight but statistically significant anisotropy in dislocation loop microstructure was observed in one irradiation condition, and accounted for at least a fraction of the creep strain derived from the stress relaxation. The estimated total volume of loops accounted for 10-45% of the estimated total swelling. The results imply that the early irradiation creep deformation of SiC observed in this work was driven by anisotropic evolutions of extrinsic dislocation loops and matrix defects with undetectable sizes.

  18. Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons

    NASA Astrophysics Data System (ADS)

    Huran, J.; Bohacek, P.; Kucera, M.; Kleinova, A.; Sasinkova, V.; IEE SAS, Bratislava, Slovakia Team; Polymer Institute, SAS, Bratislava, Slovakia Team; Institute of Chemistry, SAS, Bratislava, Slovakia Team

    2015-09-01

    Amorphous silicon carbide and N-doped silicon carbide thin films were deposited on P-type Si(100) wafer by plasma enhanced chemical vapor deposition (PECVD) technology using silane, methane, ammonium and argon gases. The concentration of elements in the films was determined by RBS and ERDA method. Chemical compositions were analyzed by FTIR spectroscopy. Photoluminescence properties were studied by photoluminescence spectroscopy (PL). Irradiation of samples with various neutron fluencies was performed at room temperature. The films contain silicon, carbon, hydrogen, nitrogen and small amount of oxygen. From the IR spectra, the films contained Si-C, Si-H, C-H, Si-N, N-H and Si-O bonds. No significance effect on the IR spectra after neutron irradiation was observed. PL spectroscopy results of films showed decreasing PL intensity after neutron irradiation and PL intensity decreased with increased neutron fluencies. The measured current of the prepared structures increased after irradiation with neutrons and rise up with neutron fluencies.

  19. Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature

    DOE PAGES

    Koyanagi, T.; Katoh, Y.; Kiggans, J. O.; ...

    2017-03-10

    We fabricated and irradiated monolithic silicon carbide (SiC) to SiC plate joints with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. Furthermore, the SiC-based bonding layers of the SiC nanopowdermore » sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.« less

  20. Irradiation resistance of silicon carbide joint at light water reactor-relevant temperature

    NASA Astrophysics Data System (ADS)

    Koyanagi, T.; Katoh, Y.; Kiggans, J. O.; Hinoki, T.; Khalifa, H. E.; Deck, C. P.; Back, C. A.

    2017-05-01

    Monolithic silicon carbide (SiC) to SiC plate joints were fabricated and irradiated with neutrons at 270-310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. The SiC-based bonding layers of the SiC nanopowder sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.

  1. Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy

    DOE PAGES

    Koyanagi, T.; Lance, M. J.; Katoh, Y.

    2016-08-11

    Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.

  2. Neutron irradiation effects on high Nicalon silicon carbide fibers

    SciTech Connect

    Osborne, M.C.; Steiner, D.; Snead, L.L.

    1996-10-01

    The effects of neutron irradiation on the mechanical properties and microstructure of SiC and SiC-based fibers is a current focal point for the development of radiation damage resistant SiC/SiC composites. This report discusses the radiation effects on the Nippon Carbon Hi-Nicalon{trademark} fiber system and also discusses an erratum on earlier results published by the authors on this material. The radiation matrix currently under study is also summarized.

  3. The effect of neutron irradiation on silicon carbide fibers

    SciTech Connect

    Newsome, G.A.

    1997-01-01

    Nine types of SiC fiber have been exposed to neutron radiation in the Advanced Test Reactor at 250 C for various lengths of time ranging from 83 to 128 days. The effects of these exposures have been initially determined using scanning electron microscopy. The fibers tested were Nicalon{trademark} CG, Tyranno, Hi-Nicalon{trademark}, Dow Corning SiC, Carborundum SiC, Textron SCS-6, polymethysilane (PMS) derived SiC from the University of Michigan, and two types of MER SiC fiber. This covers a range of fibers from widely used commercial fibers to developmental fibers. Consistent with previous radiation experiments, Nicalon fiber was severely degraded by the neutron irradiation. Similarly, Tyranno suffered severe degradation. The more advanced fibers which approach the composition and properties of SiC performed well under irradiation. Of these, the Carborundum SiC fiber appeared to perform the best. The Hi-Nicalon and Dow Corning Fibers exhibited good general stability, but also appear to have some surface roughening. The MER fibers and the Textron SCS-6 fibers both had carbon cores which adversely influenced the overall stability of the fibers.

  4. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

    SciTech Connect

    Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance Lewis

    2016-01-14

    Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

  5. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

    NASA Astrophysics Data System (ADS)

    Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance L.

    2016-03-01

    Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

  6. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

    DOE PAGES

    Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; ...

    2016-01-14

    Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperaturemore » and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.« less

  7. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    NASA Astrophysics Data System (ADS)

    Koyanagi, Takaaki; Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; Hinoki, Tatsuya; Snead, Lance L.

    2016-09-01

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. The materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber-reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ∼1 GPa for the fibers and ∼300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ∼1 × 10-7 [dpa-1 MPa-1] at 430-750 °C for the range of 1-30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures-such as grain boundary, crystal orientation, and secondary phases-increase with increasing irradiation temperature.

  8. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    DOE PAGES

    Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; ...

    2016-06-04

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for themore » other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.« less

  9. Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

    NASA Astrophysics Data System (ADS)

    Koyanagi, T.; Shimoda, K.; Kondo, S.; Hinoki, T.; Ozawa, K.; Katoh, Y.

    2014-12-01

    The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. The apparent stress exponent of the irradiation creep slightly exceeded unity, and instantaneous creep coefficient at 380-790 °C was estimated to be ∼1 × 10-5 [MPa-1 dpa-1] at ∼0.1 dpa and 1 × 10-7 to 1 × 10-6 [MPa-1 dpa-1] at ∼1 dpa. The irradiation creep strain appeared greater than that for the high purity SiC. Microstructural observation and data analysis indicated that the grain-boundary sliding associated with the secondary phases contributes to the irradiation creep at 380-790 °C to 0.01-0.11 dpa.

  10. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    SciTech Connect

    Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; Hinoki, Tatsuya; Snead, Lance Lewis; Koyanagi, Takaaki

    2016-06-04

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.

  11. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    SciTech Connect

    Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; Hinoki, Tatsuya; Snead, Lance Lewis; Koyanagi, Takaaki

    2016-06-04

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.

  12. Irradiation Creep of Chemically Vapor Deposited Silicon Carbide as Estimated by Bend Stress Relaxation Method

    SciTech Connect

    Katoh, Yutai; Snead, Lance Lewis; Hinoki, Tatsuya; Kondo, Sosuke; Kohyama, Akira

    2007-01-01

    The bend stress relaxation technique was applied for an irradiation creep study of high purity, chemically vapor-deposited beta-phase silicon carbide (CVD SiC) ceramic. A constant bend strain was applied to thin strip samples during neutron irradiation to fluences 0.2-4.2 dpa at various temperatures in the range {approx}400 to {approx}1080 C. Irradiation creep strain at <0.7 dpa exhibited only a weak dependence on irradiation temperature. However, the creep strain dependence on fluence was non-linear due to the early domination of the initial transient creep, and a transition in creep behavior was found between 950 and 1080 C. Steady-state irradiation creep compliances of polycrystalline CVD SiC at doses >0.7 dpa were estimated to be 2.7({+-}2.6) x 10{sup -7} and 1.5({+-}0.8) x 10{sup -6} (MPa dpa){sup -1} at {approx}600 to {approx}950 C and {approx}1080 C, respectively, whereas linear-averaged creep compliances of 1-2 x 10{sup -6} (MPa dpa){sup -1} were obtained for doses of 0.6-0.7 dpa at all temperatures. Monocrystalline 3C SiC samples exhibited significantly smaller transient creep strain and greater subsequent deformation when loaded along <0 1 1> direction.

  13. SILICON CARBIDE FOR SEMICONDUCTORS

    DTIC Science & Technology

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  14. Silicon Carbide Shapes.

    DTIC Science & Technology

    Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a...reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide , the...graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

  15. Tritium trapping in silicon carbide in contact with solid breeder under high flux isotope reactor irradiation

    SciTech Connect

    H. Katsui; Y. Katoh; A. Hasegawa; M. Shimada; Y. Hatano; T. Hinoki; S. Nogami; T. Tanaka; S. Nagata; T. Shikama

    2013-11-01

    The trapping of tritium in silicon carbide (SiC) injected from ceramic breeding materials was examined via tritium measurements using imaging plate (IP) techniques. Monolithic SiC in contact with ternary lithium oxide (lithium titanate and lithium aluminate) as a ceramic breeder was irradiated in the High Flux Isotope Reactor (HFIR) in Oak Ridge, Tennessee, USA. The distribution of photo-stimulated luminescence (PSL) of tritium in SiC was successfully obtained, which separated the contribution of 14C ß-rays to the PSL. The tritium incident from ceramic breeders was retained in the vicinity of the SiC surface even after irradiation at 1073 K over the duration of ~3000 h, while trapping of tritium was not observed in the bulk region. The PSL intensity near the SiC surface in contact with lithium titanate was higher than that obtained with lithium aluminate. The amount of the incident tritium and/or the formation of a Li2SiO3 phase on SiC due to the reaction with lithium aluminate under irradiation likely were responsible for this observation.

  16. Silicon carbide ceramic production

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

  17. Silicon Carbide Photoconductive Switches

    DTIC Science & Technology

    1994-09-01

    The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical...and the bandgap was determined to be approximately 3.1 eV. 6H-SiC, Photoconductive, Photovoltaic, Absorption coefficient, Switch, Silicon carbide

  18. SILICON CARBIDE DATA SHEETS

    DTIC Science & Technology

    These data sheets present a compilation of a wide range of electrical, optical and energy values for alpha and beta- silicon carbide in bulk and film...spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped silicon carbide , as well as effective mass tables, work

  19. Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

    NASA Astrophysics Data System (ADS)

    Khorsandi, Behrooz

    There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

  20. High Dose Neutron Irradiation of Hi-Nicalon Type S Silicon Carbide Composites, Part 2. Mechanical and Physical Properties

    SciTech Connect

    Katoh, Yutai; Nozawa, Takashi; Shih, Chunghao Phillip; Ozawa, Kazumi; Koyanagi, Takaaki; Porter, Wallace D; Snead, Lance Lewis

    2015-01-07

    Nuclear-grade silicon carbide (SiC) composite material was examined for mechanical and thermophysical properties following high-dose neutron irradiation in the High Flux Isotope Reactor at a temperature range of 573–1073 K. Likewise, the material was chemical vapor-infiltrated SiC-matrix composite with a two-dimensional satin weave Hi-Nicalon Type S SiC fiber reinforcement and a multilayered pyrocarbon/SiC interphase. Moderate (1073 K) to very severe (573 K) degradation in mechanical properties was found after irradiation to >70 dpa, whereas no evidence was found for progressive evolution in swelling and thermal conductivity. The swelling was found to recover upon annealing beyond the irradiation temperature, indicating the irradiation temperature, but only to a limited extent. Moreover, the observed strength degradation is attributed primarily to fiber damage for all irradiation temperatures, particularly a combination of severe fiber degradation and likely interphase damage at relatively low irradiation temperatures.

  1. Silicon carbide thyristor

    NASA Technical Reports Server (NTRS)

    Edmond, John A. (Inventor); Palmour, John W. (Inventor)

    1996-01-01

    The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

  2. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  3. Silicon carbide reinforced silicon carbide composite

    NASA Technical Reports Server (NTRS)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  4. Silicon Carbide Metallization

    NASA Astrophysics Data System (ADS)

    Lescoat, F.; Tanguy, F.; Durand, P.

    2016-05-01

    A study has been done to assess the feasibility of metallization of Silicon Carbide (SiC) in order to simplify design and mounting of one or more ground reference rail needed to provide an electrical reference for electronics mounted on an SiC structure.

  5. Composition Comprising Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  6. Characterization of Silicon Carbide.

    DTIC Science & Technology

    The various electrical and structural measurement techniques for silicon carbide are described. The electrical measurements include conductivity, resistivity, carrier concentration, mobility, doping energy levels, and lifetime. The structural measurements include polytype determination and crystalline perfection. Both bulk and epitaxial films are included.

  7. Improved toughness of silicon carbide

    NASA Technical Reports Server (NTRS)

    Palm, J. A.

    1975-01-01

    Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

  8. Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

    NASA Astrophysics Data System (ADS)

    Lam, C. H.; Lam, T. W.; Ling, C. C.; Fung, S.; Beling, C. D.; De-Sheng, Hang; Huimin, Weng

    2004-11-01

    The positron lifetime technique was employed to study vacancy-type defects in 8 MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the VCVSi divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the VCVSi for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the VCVSi divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172 ps.

  9. High Dose Neutron Irradiation of Hi-Nicalon Type S Silicon Carbide Composites, Part 2. Mechanical and Physical Properties

    DOE PAGES

    Katoh, Yutai; Nozawa, Takashi; Shih, Chunghao Phillip; ...

    2015-01-07

    Nuclear-grade silicon carbide (SiC) composite material was examined for mechanical and thermophysical properties following high-dose neutron irradiation in the High Flux Isotope Reactor at a temperature range of 573–1073 K. Likewise, the material was chemical vapor-infiltrated SiC-matrix composite with a two-dimensional satin weave Hi-Nicalon Type S SiC fiber reinforcement and a multilayered pyrocarbon/SiC interphase. Moderate (1073 K) to very severe (573 K) degradation in mechanical properties was found after irradiation to >70 dpa, whereas no evidence was found for progressive evolution in swelling and thermal conductivity. The swelling was found to recover upon annealing beyond the irradiation temperature, indicating themore » irradiation temperature, but only to a limited extent. Moreover, the observed strength degradation is attributed primarily to fiber damage for all irradiation temperatures, particularly a combination of severe fiber degradation and likely interphase damage at relatively low irradiation temperatures.« less

  10. High dose neutron irradiations of Hi-Nicalon Type S silicon carbide composites, Part 1: Microstructural evaluations

    SciTech Connect

    Perez-Bergquist, Alex G.; Nozawa, Takashi; Shih, Chunghao Phillip; Leonard, Keith J.; Snead, Lance Lewis; Katoh, Yutai

    2014-07-01

    Over the past decade, significant progress has been made in the development of silicon carbide (SiC) composites, composed of near-stoichiometric SiC fibers embedded in a crystalline SiC matrix, to the point that such materials can now be considered nuclear grade. Recent neutron irradiation studies of Hi-Nicalon Type S SiC composites showed excellent radiation response at damage levels of 30-40 dpa at temperatures of 300-800 °C. However, more recent studies of these same fiber composites irradiated to damage levels of >70 dpa at similar temperatures showed a marked decrease in ultimate flexural strength, particularly at 300 °C. Here, electron microscopy is used to analyze the microstructural evolution of these irradiated composites in order to investigate the cause of the degradation. While minimal changes were observed in Hi-Nicalon Type S SiC composites irradiated at 800 °C, substantial microstructural evolution is observed in those irradiated at 300° C. Furthermore, carbonaceous particles in the fibers grew by 25% compared to the virgin case, and severe cracking occurred at interphase layers.

  11. High dose neutron irradiations of Hi-Nicalon Type S silicon carbide composites, Part 1: Microstructural evaluations

    DOE PAGES

    Perez-Bergquist, Alex G.; Nozawa, Takashi; Shih, Chunghao Phillip; ...

    2014-07-01

    Over the past decade, significant progress has been made in the development of silicon carbide (SiC) composites, composed of near-stoichiometric SiC fibers embedded in a crystalline SiC matrix, to the point that such materials can now be considered nuclear grade. Recent neutron irradiation studies of Hi-Nicalon Type S SiC composites showed excellent radiation response at damage levels of 30-40 dpa at temperatures of 300-800 °C. However, more recent studies of these same fiber composites irradiated to damage levels of >70 dpa at similar temperatures showed a marked decrease in ultimate flexural strength, particularly at 300 °C. Here, electron microscopy ismore » used to analyze the microstructural evolution of these irradiated composites in order to investigate the cause of the degradation. While minimal changes were observed in Hi-Nicalon Type S SiC composites irradiated at 800 °C, substantial microstructural evolution is observed in those irradiated at 300° C. Furthermore, carbonaceous particles in the fibers grew by 25% compared to the virgin case, and severe cracking occurred at interphase layers.« less

  12. Neutron irradiation and frequency effects on the electrical conductivity of nanocrystalline silicon carbide (3C-SiC)

    NASA Astrophysics Data System (ADS)

    Huseynov, Elchin

    2016-09-01

    In this present work nanocrystalline silicon carbide (3C-SiC) has been irradiated with neutron flux (∼ 2 ×1013 ncm-2s-1) up to 20 hours at different periods. Electrical conductivity of nanocrystalline 3C-SiC particles (∼18 nm) is comparatively analyzed before and after neutron irradiation. The frequency dependencies of electrical conductivity of 3C-SiC nanoparticles is reviewed at 100 K-400 K temperature range before and after irradiation. The measurements were carried out at 0.1 Hz-2.5 MHz frequency ranges and at different temperatures. Radiation-induced conductivity (RIC) was observed in the nanocrystalline 3C-SiC particles after neutron irradiation and this conductivity study as a function of frequency are presented. The type of conductivity has been defined based on the interdependence between real and imaginary parts of electrical conductivity function. Based on the obtained results the mechanism behind the electrical conductivity of nanocrystalline 3C-SiC particles is explained in detail.

  13. The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

    NASA Astrophysics Data System (ADS)

    Ruddy, Frank H.; Seidel, John G.

    2007-10-01

    Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 °C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress.

  14. Silicon Carbide Integrated Circuit Chip

    NASA Image and Video Library

    2015-02-17

    A multilevel interconnect silicon carbide integrated circuit chip with co-fired ceramic package and circuit board recently developed at the NASA GRC Smart Sensors and Electronics Systems Branch for high temperature applications. High temperature silicon carbide electronics and compatible packaging technologies are elements of instrumentation for aerospace engine control and long term inner-solar planet explorations.

  15. Silicon carbide sewing thread

    NASA Technical Reports Server (NTRS)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  16. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  17. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  18. Silicon Carbide Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2006-01-01

    Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

  19. Hydrogen-silicon carbide interactions

    NASA Technical Reports Server (NTRS)

    Eckel, Andrew J.; Jacobson, Nathan S.; Misra, Ajay K.; Humphrey, Donald L.

    1989-01-01

    A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamic maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of Region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicon carbide is the single stable solid phase in Region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4, and SiH. Analysis of the kinetics of reaction for Region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to Regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

  20. Hydrogen-silicon carbide interactions

    NASA Technical Reports Server (NTRS)

    Eckel, Andrew J.; Misra, Ajay K.; Humphrey, Donald L.; Jacobson, Nathan S.

    1990-01-01

    A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamics maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicone carbide is the single stable solid phase in region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4 and SiH. Analyses of the kinetics of reaction for region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

  1. PREPARATION AND PURIFICATION OF SILICON CARBIDE.

    DTIC Science & Technology

    the materials were divided into two parts. Part I covers problems of silicon carbide preparation and the growing of silicon carbide single crystals...and thin films for semiconductor devices. Part II treats problems of purity, including the purification and chemical analysis of silicon carbide and of starting materials for silicon carbide preparation.

  2. The Effect of Grain Size on the Radiation Response of Silicon Carbide and its Dependence on Irradiation Species and Temperature

    NASA Astrophysics Data System (ADS)

    Jamison, Laura

    In recent years the push for green energy sources has intensified, and as part of that effort accident tolerant and more efficient nuclear reactors have been designed. These reactors demand exceptional material performance, as they call for higher temperatures and doses. Silicon carbide (SiC) is a strong candidate material for many of these designs due to its low neutron cross-section, chemical stability, and high temperature resistance. The possibility of improving the radiation resistance of SiC by reducing the grain size (thus increasing the sink density) is explored in this work. In-situ electron irradiation and Kr ion irradiation was utilized to explore the radiation resistance of nanocrystalline SiC (nc-SiC), SiC nanopowders, and microcrystalline SiC. Electron irradiation simplifies the experimental results, as only isolated Frenkel pairs are produced so any observed differences are simply due to point defect interactions with the original microstructure. Kr ion irradiation simulates neutron damage, as large radiation cascades with a high concentration of point defects are produced. Kr irradiation studies found that radiation resistance decreased with particle size reduction and grain refinement (comparing nc-SiC and microcrystalline SiC). This suggests that an interface-dependent amorphization mechanism is active in SiC, suggested to be interstitial starvation. However, under electron irradiation it was found that nc-SiC had improved radiation resistance compared to single crystal SiC. This was found to be due to several factors including increased sink density and strength and the presence of stacking faults. The stacking faults were found to improve radiation response by lowering critical energy barriers. The change in radiation response between the electron and Kr ion irradiations is hypothesized to be due to either the change in ion type (potential change in amorphization mechanism) or a change in temperature (at the higher temperatures of the Kr ion

  3. Investigation of the agglomeration and amorphous transformation effects of neutron irradiation on the nanocrystalline silicon carbide (3C-SiC) using TEM and SEM methods

    NASA Astrophysics Data System (ADS)

    Huseynov, Elchin M.

    2017-04-01

    Nanocrystalline 3C-SiC particles irradiated by neutron flux during 20 h in TRIGA Mark II light water pool type research reactor. Silicon carbide nanoparticles were analyzed by Scanning Electron Microscope (SEM) and Transmission Electron Microscopy (TEM) devices before and after neutron irradiation. The agglomeration of nanoparticles was studied comparatively before and after neutron irradiation. After neutron irradiation the amorphous layer surrounding the nanoparticles was analyzed in TEM device. Neutron irradiation defects in the 3C-SiC nanoparticles and other effects investigated by TEM device. The effect of irradiation on the crystal structure of the nanomaterial was studied by selected area electron diffraction (SAED) and electron diffraction patterns (EDP) analysis.

  4. Sustained molecular oxygen activation by solid iron doped silicon carbide under microwave irradiation: Mechanism and application to norfloxacin degradation.

    PubMed

    Li, Hongbo; Chen, Jing; Hou, Huijie; Pan, Hong; Ma, Xiaoxue; Yang, Jiakuan; Wang, Linling; Crittenden, John C

    2017-09-11

    Sustained molecular oxygen activation by iron doped silicon carbide (Fe/SiC) was investigated under microwave (MW) irradiation. The catalytic performance of Fe/SiC for norfloxacin (NOR) degradation was also studied. Rapid mineralization in neutral solution was observed with a pseudo-first-order rate constant of 0.2239 min(-1) under 540 W of MW irradiation for 20 min. Increasing Fe/SiC rod and MW power significantly enhanced the degradation and mineralization rate with higher yield of reactive oxygen species (ROS). Fe shell corrosion and subsequent Fe(0/II) oxidation by molecular oxygen with MW activation was the key factor for NOR degradation through two-electron-transfer by Fe(0) under acidic conditions and single-electron-transfer by Fe(II) under neutral-alkaline solution. Removal rate of NOR was significantly affected by solution pH, showing higher degradation rates at both acidic and alkaline conditions. The highest removal efficiencies and rates at alkaline pH values were ascribed to the contribution of bound Fe(II) species on the Fe shell surface due to the hydroxylation of Fe/SiC. ·OH was the main oxidizing specie for NOR degradation, confirmed by density functional theory (DFT) calculations and radical scavenger tests. DFT calculations were conducted on the reaction/activation energies of the transition/final states of NOR/degradation products, combined with intermediate identification with high performance liquid chromatography coupled with a triple-quadruple mass spectrometer (HPLC-MS/MS), the piperazinyl ring was the most reactive site for ·OH attack, followed by further ring-opening and stepwise oxidation. In this study, Fe/SiC were proved to be an excellent catalyst for the treatment of fluoroquinolone antibiotics with MW activation. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Silicon carbide photoconductive switches

    NASA Astrophysics Data System (ADS)

    Saddow, Stephen E.

    1994-09-01

    The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical photoconductive (PC) switches. Both photovoltaic and photoconductive effects are reported, which were observed on switches using both geometries and measured at several wavelengths near the 6H-SiC absorption edge. PC techniques were employed to measure the surface and bulk carrier lifetimes of 40 and 200 ns, respectively. The switches displayed a high-speed photovoltaic response to picosecond laser excitations in the UV and visible spectral regions. In particular, efficient subnanosecond optical absorption processes were observed in the visible region. The photovoltage was measured as a function of both laser wavelength (and hence absorption depth) and laser beam position within the switching gap. The switch response to picosecond laser pulses in the UV, violet, green, and red spectral regions was shown to have subnanosecond photovoltaic response times. Finally, since the optical absorption coefficient had not been well established for device-grade 6H-SiC, the optical absorption coefficient near the 6H-SiC bandgap energy (Eg) was also measured, and the bandgap was determined to be approximately 3.1 eV.

  6. Silicon Carbide Growth

    NASA Technical Reports Server (NTRS)

    2005-01-01

    Andrew Trunek has focused on supporting the Sic team through the growth of Sic crystals, making observations and conducting research that meets the collective needs and requirements of the team while fulfilling program commitments. Cancellation of the Ultra Efficient Engine Technology (UEET) program has had a significant negative impact on resources and research goals. This report highlights advancements and achievements made with this cooperative agreement over the past year. NASA Glenn Research Center (GRC) continues to make advances in silicon carbide (SiC) research during the past year. Step free surfaces were used as substrates for the deposition of GaN epilayers that yielded very low dislocation densities. Defect free 3C- SiC was successfully nucleated on step free mesas and test diodes were fabricated. Web growth techniques were used to increase the usable surface area of dislocation free SiC by approximately equal to 40%. The greatest advancement has been attained on stepped surfaces of SiC. A metrology standard was developed using high temperature etching techniques titled "Nanometer Step Height Standard". This development culminated in being recognized for a 2004 R&D100 award and the process to produce the steps received a NASA Space Act award.

  7. Palladium interaction with silicon carbide

    NASA Astrophysics Data System (ADS)

    Gentile, M.; Xiao, P.; Abram, T.

    2015-07-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC-5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  8. Diamond-silicon carbide composite

    DOEpatents

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  9. Porous silicon carbide (SIC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  10. 500 C SILICON CARBIDE RECTIFIER PROGRAM.

    DTIC Science & Technology

    Efforts were continued on the development of 500 degree C silicon carbide rectifiers. The growth rate of silicon carbide crystals prepared by the...as obtained from a simple model. All values agree within a factor of five. The use of molten borax as an etchant for silicon carbide was studies...is possible. Details are given on the life and storage tests which were successfully passed by two silicon carbide rectifiers. An open tube-flowing

  11. Silicon Carbide Semiconductor Device Fabrication and Characterization

    DTIC Science & Technology

    1990-02-08

    SPACE ADMINISTRATION For Grant NAG 3-782 S- 1 entitled SILICON CARBIDE SEMICONDUCTOR DEVICE FABRICATION AND CHARACTERIZATION For the Period 10 February...NUMBERS Silicon Carbide ..Semiconductor Device Fabrication and PR# 335820 Characterization __________________________________________________ APP# 505-62-01...also been demonstrated. _________ 14. SUBJECT TERMS 15. NuMBER OF PACiES -~- Silicon carbide , Ysemiconductor devices, ion implantation aseeI4i

  12. Method of Fabricating Silicon Carbide Articles.

    DTIC Science & Technology

    The patent relates to a method for fabricating silicon carbide articles which comprises hot pressing a homogeneous mixture of carbonaceous particles...and silicon carbide powder. The presence of the carbon limits grain growth so that a silicon carbide product having greatly improved physical

  13. Anisotropic Tribological Properties of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

  14. Effects of neutron irradiation on mechanical properties of silicon carbide composites fabricated by nano-infiltration and transient eutectic-phase process

    NASA Astrophysics Data System (ADS)

    Koyanagi, Takaaki; Ozawa, Kazumi; Hinoki, Tatsuya; Shimoda, Kazuya; Katoh, Yutai

    2014-05-01

    Unidirectional silicon carbide (SiC)-fiber-reinforced SiC matrix (SiC/SiC) composites fabricated by a nano-infiltration and transient eutectic-phase (NITE) process were irradiated with neutrons at 600 °C to 0.52 dpa, at 830 °C to 5.9 dpa, and at 1270 °C to 5.8 dpa. The in-plane and trans-thickness tensile and the inter-laminar shear properties were evaluated at ambient temperature. The mechanical characteristics, including the quasi-ductile behavior, the proportional limit stress, and the ultimate tensile strength, were retained subsequent to irradiation. Analysis of the stress-strain hysteresis loop indicated the increased fiber/matrix interface friction and the decreased residual stresses. The inter-laminar shear strength exhibited a significant decrease following irradiation.

  15. SILICON CARBIDE GRAIN BOUNDARY DISTRIBUTIONS, IRRADIATION CONDITIONS, AND SILVER RETENTION IN IRRADIATED AGR-1 TRISO FUEL PARTICLES

    SciTech Connect

    Lillo, T. M.; Rooyen, I. J.; Aguiar, J. A.

    2016-11-01

    Precession electron diffraction in the transmission electron microscope was used to map grain orientation and ultimately determine grain boundary misorientation angle distributions, relative fractions of grain boundary types (random high angle, low angle or coincident site lattice (CSL)-related boundaries) and the distributions of CSL-related grain boundaries in the SiC layer of irradiated TRISO-coated fuel particles. Two particles from the AGR-1 experiment exhibiting high Ag-110m retention (>80%) were compared to a particle exhibiting low Ag-110m retention (<19%). Irradiated particles with high Ag-110m retention exhibited a lower fraction of random, high angle grain boundaries compared to the low Ag-110m retention particle. An inverse relationship between the random, high angle grain boundary fraction and Ag-110m retention is found and is consistent with grain boundary percolation theory. Also, comparison of the grain boundary distributions with previously reported unirradiated grain boundary distributions, based on SEM-based EBSD for similarly fabricated particles, showed only small differences, i.e. a greater low angle grain boundary fraction in unirradiated SiC. It was, thus, concluded that SiC layers with grain boundary distributions susceptible to Ag-110m release were present prior to irradiation. Finally, irradiation parameters were found to have little effect on the association of fission product precipitates with specific grain boundary types.

  16. Ultrasonic characterization of microwave joined silicon carbide/silicon carbide

    SciTech Connect

    House, M.B.; Day, P.S.

    1997-05-01

    High frequency (50--150 MHz), ultrasonic immersion testing has been used to characterize the surface and interfacial joint conditions of microwave bonded, monolithic silicon carbide (SiC) materials. The high resolution ultrasonic C-scan images point to damage accumulation after thermal cycling. Image processing was used to study the effects of the thermal cycling on waveform shape, amplitude and distribution. Such information is useful for concurrently engineering material fabrication processes and suitable nondestructive test procedures.

  17. Silicon carbide semiconductor technology for high temperature and radiation environments

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.

    1993-01-01

    Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

  18. Silicon carbide fibers and articles including same

    DOEpatents

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  19. Methods for producing silicon carbide fibers

    DOEpatents

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  20. Microwave processing of silicon carbide

    SciTech Connect

    Akerman, M.A.; Baity, F.W. Jr.; Caughman, J.B.; Forrester, S.C.; Kass, M.D.; Morrow, M.S.; Holcombe, C.E. Jr.; Moyer, M.W.; Dews, T.W.

    1994-12-31

    Reaction-bonded silicon carbide ({alpha}-SiC) armor tiles were annealed at 2100{degree}C using microwave radiation at 2.45 GHz. Ultrasonic velocity measurements showed that the longitudinal and shear velocities, acoustic impedances, and acoustic moduli of the post-annealed tiles were statistically higher than for the unannealed tiles. However, the exposed surfaces of the annealed tiles experienced slight degradation, which was attributed to the high annealing temperatures.

  1. Method for producing silicon nitride/silicon carbide composite

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  2. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  3. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  4. Silicon Carbide Nanotube Synthesized

    NASA Technical Reports Server (NTRS)

    Lienhard, Michael A.; Larkin, David J.

    2003-01-01

    Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

  5. 500 C SILICON CARBIDE RECTIFIER PROGRAM

    DTIC Science & Technology

    Silicon carbide crystals of the hexagonal type were grown in a Kroll-type furnace by the sublimation technique. Both homogeneous and grown junction...feasibility of vapor-phase chemical reaction methods was investigated for the controlled growth of silicon carbide platelets and sheets. The growth of

  6. Process for making silicon carbide reinforced silicon carbide composite

    NASA Technical Reports Server (NTRS)

    Lau, Sai-Kwing (Inventor); Calandra, Salavatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    1998-01-01

    A process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  7. Preparation of silicon carbide fibers

    DOEpatents

    Wei, G.C.

    1983-10-12

    Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

  8. Damage kinetics in silicon carbide

    NASA Astrophysics Data System (ADS)

    Pickup, I. M.; Barker, A. K.

    1998-07-01

    Three silicon carbides of similar density and grain size but manufactured via different routes (reaction bonded, pressureless sintered and pressure assisted densification) have been investigated. High speed photography in conjunction with Hopkinson pressure bar compression tests has revealed that not only does the manufacturing route confer a significant difference in failure kinetics but also modifies the phenomenology of failure. Plate impact experiments using lateral and longitudinal manganin stress gauges have been used to study shear strength behaviour of damaged material. Failure waves have been observed in all three materials and characteristically different damaged material shear strength relationships with pressure have been observed.

  9. Damage kinetics in silicon carbide

    SciTech Connect

    Pickup, I. M.; Barker, A. K.

    1998-07-10

    Three silicon carbides of similar density and grain size but manufactured via different routes (reaction bonded, pressureless sintered and pressure assisted densification) have been investigated. High speed photography in conjunction with Hopkinson pressure bar compression tests has revealed that not only does the manufacturing route confer a significant difference in failure kinetics but also modifies the phenomenology of failure. Plate impact experiments using lateral and longitudinal manganin stress gauges have been used to study shear strength behaviour of damaged material. Failure waves have been observed in all three materials and characteristically different damaged material shear strength relationships with pressure have been observed.

  10. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  11. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  12. Laser-induced phase separation of silicon carbide.

    PubMed

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M; Im, James S; Ruoff, Rodney S; Choi, Sung-Yool; Lee, Keon Jae

    2016-11-30

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

  13. Laser-induced phase separation of silicon carbide

    NASA Astrophysics Data System (ADS)

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

    2016-11-01

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (~2.5 nm) and polycrystalline silicon (~5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

  14. Laser-induced phase separation of silicon carbide

    PubMed Central

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

    2016-01-01

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

  15. Manufacture of silicon carbide using solar energy

    DOEpatents

    Glatzmaier, Gregory C.

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  16. Improved consolidation of silicon carbide

    NASA Technical Reports Server (NTRS)

    Freedman, M. R.; Millard, M. L.

    1986-01-01

    Alpha silicon carbide powder was consolidated by both dry and wet methods. Dry pressing in a double acting steel die yielded sintered test bars with an average flexural strength of 235.6 MPa with a critical flaw size of approximately 100 micro m. An aqueous slurry pressing technique produced sintered test bars with an average flexural strength of 440.8 MPa with a critical flaw size of approximately 25 micro m. Image analysis revealed a reduction in both pore area and pore size distribution in the slurry pressed sintered test bars. The improvements in the slurry pressed material properties are discussed in terms of reduced agglomeration and improved particle packing during consolidation.

  17. Prealloyed catalyst for growing silicon carbide whiskers

    DOEpatents

    Shalek, Peter D.; Katz, Joel D.; Hurley, George F.

    1988-01-01

    A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

  18. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  19. Whatever happened to silicon carbide. [semiconductor devices

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1981-01-01

    The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.

  20. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.

    PubMed

    Radulaski, Marina; Widmann, Matthias; Niethammer, Matthias; Zhang, Jingyuan Linda; Lee, Sang-Yun; Rendler, Torsten; Lagoudakis, Konstantinos G; Son, Nguyen Tien; Janzén, Erik; Ohshima, Takeshi; Wrachtrup, Jörg; Vučković, Jelena

    2017-03-08

    Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

  1. Stabilization of boron carbide via silicon doping.

    PubMed

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  2. Stabilization of boron carbide via silicon doping

    NASA Astrophysics Data System (ADS)

    Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, M.; Giulani, F.

    2015-01-01

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  3. Silicon Carbide Solar Cells Investigated

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  4. Power MOSFETs Formed In Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Palmour, John W.

    1995-01-01

    High-performance power metal/oxide/semiconductor field-effect transistors (MOSFETs) fabricated in silicon carbide. Devices offer potential advantages over silicon-based MOSFETs, including lower "on" - state resistances at same rated voltages, ability to operate at higher temperatures, and higher thermal conductivity. Also more resistant to damage by ionizing radiation, an advantage for switching appications in nuclear facilities.

  5. Silicon Carbide Thyristors for Power Applications

    DTIC Science & Technology

    1995-07-01

    Silicon carbide has the potential to make high-performance power devices. Its high thermal conductivity, wide bandgap, high breakdown field and high saturated electron drift velocity imply a clear superiority over Si and GaAs. This work reports the fabrication and testing of three-terminal 6H-SiC thyristors. The silicon carbide thyristors show higher current density and higher temperature operation than is possible with silicon devices. Switching measurements at room temperature and at elevated temperatures are reported. SiC thyristors have

  6. Diamond-silicon carbide composite and method

    DOEpatents

    Zhao, Yusheng

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  7. Method of fabricating porous silicon carbide (SiC)

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1995-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  8. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    NASA Technical Reports Server (NTRS)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  9. Carrier lifetimes in silicon carbide

    NASA Astrophysics Data System (ADS)

    Nigam, Saurav

    Carrier lifetimes are one of the most crucial parameters that govern the performance of high voltage/high power devices. The lack of understanding of the factors that determine the carrier lifetimes in silicon carbide is currently a major impediment in the development of high voltage/high power technology based on this material. The objective of this dissertation was to identify and subsequently, characterize various recombination channels present in silicon carbide. Of special importance was identification of lifetime limiting defects in the high quality epitaxial layers grown by state-of-the-art chemical vapor deposition technique for high voltage application. The effect of growth conditions (C/Si ratio, growth temperature, seed polarity, epilayer thickness, and background doping) on the concentrations of various defects were investigated with the aim of manipulating carrier lifetimes by controlling different growth parameters. Based on the qualitative correlations between various point defects and carrier lifetimes in more than thirty epitaxial layers, three defects (Z-defect, EH6/7 center, and P1 center) were identified as potential lifetime limiting defects. The P1 center was shown to act as efficient recombination channel whenever present in concentrations greater than 1013 cm-3. Such concentrations were observed in layers grown on the C-face and at low C/Si ratio (less than 1.5). The measurement of recombination rates of electrons and holes via the Z-defect and the EH6/7 center (as a function of temperature) were performed by analyzing the carrier dynamics in specially designed p-n diodes. At 300 K, the capture cross section of the two states of the Z-defect were sigman1˜6x10-15 cm2 (electron capture at the donor state), sigmap1˜2x1014 cm2 (hole capture at the donor state), sigman2˜1x10 16 cm2 (electron capture at the acceptor state), and sigma p2˜1e-13 cm2 (hole capture at the acceptor state). The electron capture cross section for the EH6/7 centers was

  10. Deposition method for producing silicon carbide high-temperature semiconductors

    DOEpatents

    Hsu, George C.; Rohatgi, Naresh K.

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  11. Bioactivation of biomorphous silicon carbide bone implants.

    PubMed

    Will, Julia; Hoppe, Alexander; Müller, Frank A; Raya, Carmen T; Fernández, Julián M; Greil, Peter

    2010-12-01

    Wood-derived silicon carbide (SiC) offers a specific biomorphous microstructure similar to the cellular pore microstructure of bone. Compared with bioactive ceramics such as calcium phosphate, however, silicon carbide is considered not to induce spontaneous interface bonding to living bone. Bioactivation by chemical treatment of biomorphous silicon carbide was investigated in order to accelerate osseointegration and improve bone bonding ability. Biomorphous SiC was processed from sipo (Entrandrophragma utile) wood by heating in an inert atmosphere and infiltrating the resulting carbon replica with liquid silicon melt at 1450°C. After removing excess silicon by leaching in HF/HNO₃ the biomorphous preform consisted of β-SiC with a small amount (approximately 6wt.%) of unreacted carbon. The preform was again leached in HCl/HNO₃ and finally exposed to CaCl₂ solution. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared analyses proved that oxidation of the residual carbon at the surface induced formation of carboxyl [COO⁻] groups, which triggered adsorption of Ca(2+), as confirmed by XPS and inductively coupled plasma optical emission spectroscopy measurements. A local increase in Ca(2+) concentration stimulated in vitro precipitation of Ca₅(PO₄)₃OH (HAP) on the silicon carbide preform surface during exposure to simulated body fluid, which indicates a significantly increased bone bonding activity compared with SiC. Copyright © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  12. Varying potential silicon carbide gas sensor

    NASA Technical Reports Server (NTRS)

    Shields, Virgil B. (Inventor); Ryan, Margaret A. (Inventor); Williams, Roger M. (Inventor)

    1997-01-01

    A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

  13. Joining of porous silicon carbide bodies

    DOEpatents

    Bates, Carl H.; Couhig, John T.; Pelletier, Paul J.

    1990-05-01

    A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

  14. Mechanical Properties of Crystalline Silicon Carbide Nanowires.

    PubMed

    Zhang, Huan; Ding, Weiqiang; Aidun, Daryush K

    2015-02-01

    In this paper, the mechanical properties of crystalline silicon carbide nanowires, synthesized with a catalyst-free chemical vapor deposition method, were characterized with nanoscale tensile testing and mechanical resonance testing methods inside a scanning electron microscope. Tensile testing of individual silicon carbide nanowire was performed to determine the tensile properties of the material including the tensile strength, failure strain and Young's modulus. The silicon carbide nanowires were also excited to mechanical resonance in the scanning electron microscope vacuum chamber using mechanical excitation and electrical excitation methods, and the corresponding resonance frequencies were used to determine the Young's modulus of the material according to the simple beam theory. The Young's modulus values from tensile tests were in good agreement with the ones obtained from the mechanical resonance tests.

  15. Silicon carbide, an emerging high temperature semiconductor

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.; Powell, J. Anthony

    1991-01-01

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  16. New process of silicon carbide purification intended for silicon passivation

    NASA Astrophysics Data System (ADS)

    Barbouche, M.; Zaghouani, R. Benabderrahmane; Benammar, N. E.; Aglieri, V.; Mosca, M.; Macaluso, R.; Khirouni, K.; Ezzaouia, H.

    2017-01-01

    In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto silicon substrates by pulsed laser deposition technique (PLD) using purified SiC powder as target. Significant improvement of the minority carrier lifetime was obtained encouraging the use of SiC as a passivation layer for silicon.

  17. On the sintering of silicon carbide

    NASA Technical Reports Server (NTRS)

    Gugel, E.

    1986-01-01

    This document deals with the sintering of silicon carbide using pressureless sintering. This technique makes it possible to sinter a primarily covalent material to usable densities up to over 98% thD without having to use a high amount of sinter additives as is the case with other non-oxide ceramic materials. The process takes place rapidly, and it is also possible to produce relatively thick-walled structural parts without major problems. This sheds more light on the true characteristics of silicon carbide in one structural part, since there is no second or nearly no second phase. Heat pressing has improved stability.

  18. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

    1989-05-09

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

  19. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

    1989-01-01

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

  20. Tribological properties of sintered polycrystalline and single crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

    1982-01-01

    Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

  1. PWR cores with silicon carbide cladding

    SciTech Connect

    Dobisesky, J. P.; Carpenter, D.; Pilat, E.; Kazimi, M. S.

    2012-07-01

    The feasibility of using silicon carbide rather than Zircaloy cladding, to reach higher power levels and higher discharge burnups in PWRs has been evaluated. A preliminary fuel design using fuel rods with the same dimensions as in the Westinghouse Robust Fuel Assembly but with fuel pellets having 10 vol% central void has been adopted to mitigate the higher fuel temperatures that occur due to the lower thermal conductivity of the silicon carbide and to the persistence of the open clad-pellet gap over most of the fuel life. With this modified fuel design, it is possible to achieve 18 month cycles that meet present-day operating constraints on peaking factor, boron concentration, reactivity coefficients and shutdown margin, while allowing batch average discharge burnups up to 80 MWD/kgU and peak rod burnups up to 100 MWD/kgU. Power uprates of 10% and possibly 20% also appear feasible. For non-uprated cores, the silicon carbide-clad fuel has a clear advantage that increases with increasing discharge burnup. Even for comparable discharge burnups, there is a savings in enriched uranium. Control rod configuration modifications may be required to meet the shutdown margin criterion for the 20% up-rate. Silicon carbide's ability to sustain higher burnups than Zircaloy also allows the design of a licensable two year cycle with only 96 fresh assemblies, avoiding the enriched uranium penalty incurred with use of larger batch sizes due to their excessive leakage. (authors)

  2. Ceramic Fabric Coated With Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Riccitiello, S. R.; Smith, M.; Goldstein, H.; Zimmerman, N.

    1988-01-01

    Material used as high-temperature shell. Ceramic fabric coated with silicon carbide (SiC) serves as tough, heat-resistant covering for other refractory materials. Developed to protect reusable insulating tiles on advanced space transportation systems. New covering makes protective glaze unnecessary. Used on furnace bricks or on insulation for engines.

  3. Micromachining of Silicon Carbide using femtosecond lasers

    NASA Astrophysics Data System (ADS)

    Farsari, M.; Filippidis, G.; Zoppel, S.; Reider, G. A.; Fotakis, C.

    2007-04-01

    We have demonstrated micromachining of bulk 3C silicon carbide (3C- SiC) wafers by employing 1028nm wavelength femtosecond laser pulses of energy less than 10 nJ directly from a femtosecond laser oscillator, thus eliminating the need for an amplified system and increasing the micromachining speed by more than four orders of magnitude.

  4. High Q silicon carbide microdisk resonator

    SciTech Connect

    Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang

    2014-05-05

    We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12 × 10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

  5. Silicon Carbide Power Devices and Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  6. Silicon carbide diode for increased light output

    NASA Technical Reports Server (NTRS)

    Griffiths, L. B.; Mlavsky, A. I.

    1969-01-01

    Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.

  7. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  8. Parallel microwave chemistry in silicon carbide microtiter platforms: a review.

    PubMed

    Kappe, C Oliver; Damm, Markus

    2012-02-01

    In this review, applications of silicon carbide-based microtiter platforms designed for use in combination with dedicated multimode microwave reactors are described. These platforms are employed not only for the efficient parallel synthesis of compound libraries, but also in the context of high-throughput reaction screening/optimization and a number of other (bio)analytical and biomedical applications. Since the semiconducting plate material (silicon carbide) is strongly microwave absorbing and possesses high thermal conductivity, no temperature gradients across the microtiter plate exist. Therefore, many of the disadvantages experienced in attempting to perform microtiter plate chemistry under conventional microwave conditions can be eliminated. In general, the silicon carbide-based microtiter platforms allow sealed vessel processing (either directly in the well or in glass vials placed into the wells) of volumes ranging from 0.02-3.0 mL at a maximum temperature/pressure limit of 200°C/20 bar. Depending on the specific plate and rotor configuration, a maximum of 80-192 transformations can be carried out in parallel in a single microwave irradiation experiment under strict temperature control. A platform type utilizing HPLC/GC vials as reaction vessels allows analysis directly from the reaction vessel eliminating the need for a transfer step from the reaction to the analysis vial. The latter system is particularly useful for analytical applications as well as reaction optimization/screening.

  9. Shock compression properties of silicon carbide

    SciTech Connect

    Grady, D.E.; Kipp, M.E.

    1993-07-01

    An investigation of the shock compression and release properties of silicon carbide ceramic has been performed. A series of planar impact experiments has been completed in which stationary target discs of ceramic were struck by plates of either similar ceramic or other appropriate material at velocities up to 2.2 km/s with a propellant gun facility. The particle velocity history at the interface between the back of the target ceramic and a lithium-fluoride window material was measured with laser velocity interferometry (VISAR). Impact stresses achieved in these experiments range between about 10 and 50 GPa. Numerical solutions and analytic methods were used to determine the dynamic compression and release stress-strain behavior of the ceramic. Further analysis of the data was performed to determine dynamic strength and compressibility properties of silicon carbide.

  10. Corrosion Characteristics of Silicon Carbide and Silicon Nitride

    PubMed Central

    Munro, R. G.; Dapkunas, S. J.

    1993-01-01

    The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags. PMID:28053489

  11. Size dependence of nanoscale wear of silicon carbide

    Treesearch

    Chaiyapat Tangpatjaroen; David Grierson; Steve Shannon; Joseph E. Jakes; Izabela Szlufarska

    2017-01-01

    Nanoscale, single-asperity wear of single-crystal silicon carbide (sc- SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native...

  12. High temperature silicon carbide impregnated insulating fabrics

    NASA Technical Reports Server (NTRS)

    Schomburg, C.; Dotts, R. L. (Inventor)

    1982-01-01

    High temperature insulating articles having improved performance characteristics are described. The articles comprise fabrics of closely woven refractory or heat resistant fibers having particles of silicon carbide dispersed at least partially through the fabric and bonded to the fibers with an emulsifiable polyethylene wax. Such articles exhibit significantly increased high temperature emittance characteristics and an improved retention of integrity and flexibility after prolonged exposure to high temperature.

  13. Silicon Carbide Technologies for Lightweighted Aerospace Mirrors

    DTIC Science & Technology

    2008-09-01

    Silicon Carbide Technologies for Lightweighted Aerospace Mirrors Lawrence E. Matson (1) Ming Y. Chen (1) Brett deBlonk (2) Iwona A...glass and beryllium to produce lightweighted aerospace mirror systems has reached its limits due to the long lead times, high processing costs...for making mirror structural substrates, figuring and finishing technologies being investigated to reduce cost time and cost, and non-destructive

  14. Low blow Charpy impact of silicon carbides

    NASA Technical Reports Server (NTRS)

    Abe, H.; Chandan, H. C.; Bradt, R. C.

    1978-01-01

    The room-temperature impact resistance of several commercial silicon carbides was examined using an instrumented pendulum-type machine and Charpy-type specimens. Energy balance compliance methods and fracture toughness approaches, both applicable to other ceramics, were used for analysis. The results illustrate the importance of separating the machine and the specimen energy contributions and confirm the equivalence of KIc and KId. The material's impact energy was simply the specimen's stored elastic strain energy at fracture.

  15. Producing Silicon Carbide for Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Hsu, G. C.; Rohatgi, N. K.

    1986-01-01

    Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

  16. Low blow Charpy impact of silicon carbides

    NASA Technical Reports Server (NTRS)

    Abe, H.; Chandan, H. C.; Bradt, R. C.

    1978-01-01

    The room-temperature impact resistance of several commercial silicon carbides was examined using an instrumented pendulum-type machine and Charpy-type specimens. Energy balance compliance methods and fracture toughness approaches, both applicable to other ceramics, were used for analysis. The results illustrate the importance of separating the machine and the specimen energy contributions and confirm the equivalence of KIc and KId. The material's impact energy was simply the specimen's stored elastic strain energy at fracture.

  17. Parallel microwave chemistry in silicon carbide reactor platforms: an in-depth investigation into heating characteristics.

    PubMed

    Damm, Markus; Kappe, C Oliver

    2009-11-01

    The heating behavior of silicon carbide reaction platforms under 2.45 GHz microwave irradiation was investigated with the aid of online thermoimaging cameras and multiple-channel fiber-optic probe temperature sensors placed inside the wells/vials of the silicon carbide microtiter plates. Microwave irradiation leads to a rapid and homogeneous heating of the entire plate, with minimal deviations in the temperature recorded at different positions of the plate or inside the wells. In temperature-controlled experiments using dedicated multimode reactors, solvents with different microwave absorption characteristics can be heated in parallel in individual wells/vials of the silicon carbide plate reaching the same set temperature. Due to the large heat capacity and high thermal conductivity of silicon carbide, the plates are able to moderate any field inhomogeneities inside a microwave cavity. Although the heating of the plates can be performed extremely efficiently inside a microwave reactor, heating and synthetic applications can alternatively be carried out by applying conventional conductive heating of the silicon carbide plates on a standard hotplate. Due to the slower heating of the silicon carbide material under these conditions, somewhat longer reaction times will be required.

  18. Friction and deformation behavior of single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1977-01-01

    Friction and deformation studies were conducted with single-crystal silicon carbide in sliding contact with diamond. When the radius of curvature of the spherical diamond rider was large (0.3), deformation of silicon carbide was primarily elastic. Under these conditions the friction coefficient was low and did not show a dependence on the silicon carbide orientation. Further, there was no detectable cracking of the silicon carbide surfaces. When smaller radii of curvature of the spherical diamond riders (0.15 and 0.02 mm) or a conical diamond rider was used, plastic grooving occured and the silicon carbide exhibited anisotropic friction and deformation behavior. Under these conditions the friction coefficient depended on load. Anisotropic friction and deformation of the basal plane of silicon carbide was controlled by the slip system. 10101120and cleavage of1010.

  19. Nonlinear optical imaging of defects in cubic silicon carbide epilayers.

    PubMed

    Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Matei, Alecs; Stanciu, George A

    2014-06-11

    Silicon carbide is one of the most promising materials for power electronic devices capable of operating at extreme conditions. The widespread application of silicon carbide power devices is however limited by the presence of structural defects in silicon carbide epilayers. Our experiment demonstrates that optical second harmonic generation imaging represents a viable solution for characterizing structural defects such as stacking faults, dislocations and double positioning boundaries in cubic silicon carbide layers. X-ray diffraction and optical second harmonic rotational anisotropy were used to confirm the growth of the cubic polytype, atomic force microscopy was used to support the identification of silicon carbide defects based on their distinct shape, while second harmonic generation microscopy revealed the detailed structure of the defects. Our results show that this fast and noninvasive investigation method can identify defects which appear during the crystal growth and can be used to certify areas within the silicon carbide epilayer that have optimal quality.

  20. Silicon carbide-silicon composite having improved oxidation resistance and method of making

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    1999-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  1. Method of making silicon carbide-silicon composite having improved oxidation resistance

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    2002-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  2. Controlled Thin-Film Growth Of Silicon Carbide Polytypes

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Larkin, David J.

    1995-01-01

    Improved deposition process to grows thin layers of silicon carbide having chosen crystalline structures. Process incorporated into sequences of deposition and etching steps used to fabricate silicon-carbide-based semiconductor devices. Important advance because silicon carbide emerging as superior semiconductor for devices operating under conditions of high power, high temperature, and/or high frequency. Furthermore, various crystalline structures of SiC have different electronic properties, each suited to specific application.

  3. Single Molecule Source Reagents for CVD of Beta Silicon Carbide

    DTIC Science & Technology

    1991-06-30

    Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic...devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting point. Use of silicon carbide thin films is...equipment has been used in the CVD systems, but small disparities remain between successive deposited films. The production of practical beta silicon carbide devices

  4. Fundamental Studies and Device Development in Beta Silicon Carbide

    DTIC Science & Technology

    1990-02-28

    The dependence of growth rate of alpha-SiC on alpha- Silicon Carbide substrates and surface morphology on temperature, source gas/carrier gas flow...Hydrogen- Silicon Carbide films during deposition have also been studied. Device research has involved studies of suitable ohmic and rectifying...semiconductor field effect transistor and Impact Avalanche transit-time diodes. Alpha silicon carbide , Semi-conductors, Growth rate, Aluminum dopant, Nitrogen dopant, Ohmic contacts, Schottky contacts, MESFET, MOSFET, IMPATT.

  5. Mechanical Testing of Silicon Carbide on MISSE-7

    DTIC Science & Technology

    2012-07-15

    JS) ii Abstract Silicon carbide ( SiC ) mechanical test specimens were included on the second Optical and Reflector Materials Experiment (ORMatE II...2. Vendor 2 EFS Weibull Results (normalized to Extra Disks Weibull parameters) 12 1. Introduction Silicon carbide ( SiC ) mechanical test...AEROSPACE REPORT NO ATR-2012(8921)-5 Mechanical Testing of Silicon Carbide on MISSE-7 Jul> 15. 2012 David B. Witkin Space Materials Laboratory

  6. Optical waveguide formed by cubic silicon carbide on sapphire substrates

    NASA Technical Reports Server (NTRS)

    Tang, Xiao; Wongchotigul, Kobchat; Spencer, Michael G.

    1991-01-01

    Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

  7. A silicon carbide array for electrocorticography and peripheral nerve recording.

    PubMed

    Diaz-Botia, C A; Luna, L E; Neely, R M; Chamanzar, M; Carraro, C; Carmena, J M; Sabes, P N; Maboudian, R; Maharbiz, M M

    2017-10-01

    Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

  8. HEAT-RESISTANT MATERIAL WITH SILICON CARBIDE AS A BASE,

    DTIC Science & Technology

    A new high-temperature material, termed SG-60, is a silicon carbide -graphite composite in which the graphite is the thermostability carrier since it...is more heat-conducting and softer (heat conductivity of graphite is 0.57 cal/g-cm-sec compared with 0.02 cal/g-cm-sec for silicon carbide ) while... silicon carbide is the carrier of high-temperature strength and hardness. The high covalent bonding strength of the atoms of silicon carbide (283 kcal

  9. Ion-Beam Milling of Silicon Carbide Epitaxial Layers.

    DTIC Science & Technology

    1982-08-04

    Ion milling of photolithographically processed silicon carbide heteroepitaxially grown layers on Si is feasible using an aluminum mask which is produced by standard photolithographic procedures and techniques. (Author)

  10. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOEpatents

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  11. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  12. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  13. Silicon carbide/SRBSN composites

    SciTech Connect

    Razzell, A.G.; Lewis, M.H.

    1991-08-01

    Ceramic matrix composites have been produced using unidirectionally aligned Textron SCS-6 fibers in a sintered reaction bonded silicon nitride (SRBSN) matrix. A tape casting technique was used to produce a prepreg sheet that could be cut and stacked to form a layup. Sintering aids were MgO, Al2O3, and Y2O3 either singly or in combination, final sintering being carried out under pressure at temperatures up to 1750 C. The three-point bend strength of the material varied between 448 and 513 MPa and showed no variation with oxidation time at 1000 C up to 25 hours. Interfacial shear strength measured by indentation was 4 MPa; some samples had a reaction layer at the interface and a shear strength of greater than MPa. Within sections 6 mm from exposed fiber ends, the interfacial carbon layers were partially removed, and the interfacial shear strength was reduced with increasing oxidation time. 4 refs.

  14. Revised activation estimates for silicon carbide

    SciTech Connect

    Heinisch, H.L.; Cheng, E.T.; Mann, F.M.

    1996-10-01

    Recent progress in nuclear data development for fusion energy systems includes a reevaluation of neutron activation cross sections for silicon and aluminum. Activation calculations using the newly compiled Fusion Evaluated Nuclear Data Library result in calculated levels of {sup 26}Al in irradiated silicon that are about an order of magnitude lower than the earlier calculated values. Thus, according to the latest internationally accepted nuclear data, SiC is much more attractive as a low activation material, even in first wall applications.

  15. Improved silicon carbide for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Whalen, T. J.; Winterbottom, W. L.

    1986-01-01

    Work performed to develop silicon carbide materials of high strength and to form components of complex shape and high reliability is described. A beta-SiC powder and binder system was adapted to the injection molding process and procedures and process parameters developed capable of providing a sintered silicon carbide material with improved properties. The initial effort has been to characterize the baseline precursor materials (beta silicon carbide powder and boron and carbon sintering aids), develop mixing and injection molding procedures for fabricating test bars, and characterize the properties of the sintered materials. Parallel studies of various mixing, dewaxing, and sintering procedures have been carried out in order to distinguish process routes for improving material properties. A total of 276 MOR bars of the baseline material have been molded, and 122 bars have been fully processed to a sinter density of approximately 95 percent. The material has a mean MOR room temperature strength of 43.31 ksi (299 MPa), a Weibull characteristic strength of 45.8 ksi (315 MPa), and a Weibull modulus of 8.0. Mean values of the MOR strengths at 1000, 1200, and 14000 C are 41.4, 43.2, and 47.2 ksi, respectively. Strength controlling flaws in this material were found to consist of regions of high porosity and were attributed to agglomerates originating in the initial mixing procedures. The mean stress rupture lift at 1400 C of five samples tested at 172 MPa (25 ksi) stress was 62 hours and at 207 MPa (30 ksi) stress was 14 hours. New fluid mixing techniques have been developed which significantly reduce flaw size and improve the strength of the material. Initial MOR tests indicate the strength of the fluid-mixed material exceeds the baseline property by more than 33 percent.

  16. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOEpatents

    Petrovic, John J.

    1995-01-01

    Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  17. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOEpatents

    Petrovic, J.J.

    1995-01-17

    Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  18. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    SciTech Connect

    Petrovic, J.J.

    1992-12-31

    This patent pertains to compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia. Fabrication, fracture toughness, and bend strength are covered.

  19. Aluminum/Silicon Carbide Matrix Material for Targeting System

    DTIC Science & Technology

    2006-07-21

    most common MMC is cast aluminum reinforced with various amounts of silicon carbide . LMMFC is currently machining very high precision components for...targeting systems from cast aluminum/ silicon carbide (AISiC) matrix material (with a very high SiC content) and are experiencing difficulty achieving the

  20. Process Development for Silicon Carbide Based Structural Ceramics

    DTIC Science & Technology

    1983-01-01

    The objective of this program is to develop a process for making shaped silicon carbide based ceramic materials with reduced microstructural flaw...identical conditions. The fracture toughness, KIC, measured by Vickers indentation testing was approximately the same as hot pressed Silicon carbide (NC203

  1. Aluminum / Silicon Carbide Matrix Material Machining for Targeting Systems

    DTIC Science & Technology

    2006-07-21

    most common (MMC) is cast aluminum reinforced with various amounts of silicon carbide . (LMMFC) is currently machining very high precision components for...targeting systems made from cast aluminum/ silicon carbide (AISiC) matrix material (with a very high SiC content) and is experiencing difficulty

  2. Process Development for Silicon Carbide Based Structural Ceramics.

    DTIC Science & Technology

    1982-02-01

    The objective of this program is to develop a process for making shaped silicon carbide based ceramic materials with reduced microstructural flaw...micrometers and a Weibull characteristic four point bend strength of 660 mPa, which significantly exceeds other reaction bonded silicon carbide materials

  3. Process for forming silicon carbide films and microcomponents

    DOEpatents

    Hamza, A.V.; Balooch, M.; Moalem, M.

    1999-01-19

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

  4. Process for forming silicon carbide films and microcomponents

    DOEpatents

    Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  5. Excess carbon in silicon carbide

    NASA Astrophysics Data System (ADS)

    Shen, X.; Oxley, M. P.; Puzyrev, Y.; Tuttle, B. R.; Duscher, G.; Pantelides, S. T.

    2010-12-01

    The application of SiC in electronic devices is currently hindered by low carrier mobility at the SiC/SiO2 interfaces. Recently, it was reported that 4H-SiC/SiO2 interfaces might have a transition layer on the SiC substrate side with C/Si ratio as high as 1.2, suggesting that carbon is injected into the SiC substrate during oxidation or other processing steps. We report finite-temperature quantum molecular dynamics simulations that explore the behavior of excess carbon in SiC. For SiC with 20% excess carbon, we find that, over short time (˜24 ps), carbon atoms bond to each other and form various complexes, while the silicon lattice is largely unperturbed. These results, however, suggest that at macroscopic times scale, C segregation is likely to occur; therefore a transition layer with 20% extra carbon would not be stable. For a dilute distribution of excess carbon, we explore the pairing of carbon interstitials and show that the formation of dicarbon interstitial cluster is kinetically very favorable, which suggests that isolated carbon clusters may exist inside SiC substrate.

  6. Fracture of silicon carbide whisker reinforced aluminum

    NASA Technical Reports Server (NTRS)

    Albritton, J. R.; Goree, J. G.

    1989-01-01

    An attempt is made to apply standard fracture toughness testing procedures, developed for metals, to whisker reinforced metal matrix composites. Test were carried out on compact-tension, center-notched, and edge-notched specimens of silicon carbide whisker reinforced extruded 2124 aluminum plate (10 and twenty volume percent of whiskers), with the loading direction either parallel or perpendicular to the extrusion direction. None of the tests is found to give a valid fracture toughness according to the criteria of the ASTM Standard E-399.

  7. The growth of cubic silicon carbide on a compliant substrate

    NASA Technical Reports Server (NTRS)

    Mitchell, Sharanda; Soward, Ida

    1995-01-01

    Research has shown that silicon carbide grown on silicon and 6H silicon carbide has problems associated with these substrates. This is because silicon and silicon carbide has a 20% lattice mismatch and cubic silicon carbide has not been successfully achieved on 6H silicon carbide. We are investigating the growth of silicon carbide on a compliant substrate in order to grow defect free silicon carbide. This compliant substrate consists of silicon/silicon dioxide with 1200 A of single crystal silicon on the top layer. We are using this compliant substrate because there is a possibility that the silicon dioxide layer and the carbonized layer will allow the silicon lattice to shrink or expand to match the lattice of the silicon carbide. This would improve the electrical properties of the film for the use of device fabrication. When trying to grow silicon carbide, we observed amorphous film. To investigate, we examined the process step by step using RHEED. RHEED data showed that each step was amorphous. We found that just by heating the substrate in the presence of hydrogen it changed the crystal structure. When heated to 1000 C for 2 minutes, RHEED showed that there was an amorphous layer on the surface. We also heated the substrate to 900 C for 2 minutes and RHEED data showed that there was a deterioration of the single crystalline structure. We assumed that the presence of oxygen was coming from the sides of the silicon dioxide layer. Therefore, we evaporated 2500 A of silicon to all four edges of the wafer to try to enclose the oxygen. When heating the evaporated wafer to 900 C the RHEED data showed single crystalline structure however at 1000 C the RHEED data showed deterioration of the single crystalline structure. We conclude that the substrate itself is temperature dependent and that the oxygen was coming from the sides of the silicon dioxide layer. We propose to evaporate more silicon on the edges of the wafer to eliminate the escape of oxygen. this will allow

  8. Silicon Carbide Nanotube Oxidation at High Temperatures

    NASA Technical Reports Server (NTRS)

    Ahlborg, Nadia; Zhu, Dongming

    2012-01-01

    Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

  9. Silicon carbide - Progress in crystal growth

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony

    1987-01-01

    Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

  10. Silicon carbide - Progress in crystal growth

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony

    1987-01-01

    Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

  11. An overview of silicon carbide device technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Matus, Lawrence G.

    1992-01-01

    Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

  12. Metallic impurities-silicon carbide interaction in HTGR fuel particles

    NASA Astrophysics Data System (ADS)

    Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

    1990-12-01

    Corrosion of the coating layers of silicon carbide (SiC) by metallic impurities was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors with an optical microscope and an electron probe micro-analyzer. The SiC layers were attacked from the outside of the particles. The main element observed in the corroded areas was iron, but sometimes iron and nickel were found. These elements must have been contained as impurities in the graphite matrix in which the coated particles were dispersed. Since these elements are more stable thermodynamically in the presence of SiC than in the presence of graphite at irradiation temperatures, they were transferred to the SiC layer to form more stable silicides. During fuel manufacturing processes, intensive care should be taken to prevent the fuel from being contaminated with those elements which react with SiC.

  13. Converting a carbon preform object to a silicon carbide object

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1990-01-01

    A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

  14. Process Development for Silicon Carbide Based Structural Ceramics

    DTIC Science & Technology

    1980-12-31

    silicon carbide base structural ceramics with reduced microstructural flaw size by in situ reaction of silicon with fine, ultra-uniform pored carbon skeletons that are produced from liquid polymer solutions without particulate additions. Thus far, very uniform carbon skeletons in two pore sizes (2.5 and 0.27 microns) have been produced and siliconized. Very uniform samples of approx 1 cm cross section have been produced in a silicon carbide material of approx 5 microns average size. Limited regions of material with carbide size less than 1 micron have

  15. Improved silicon carbide for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Whalen, Thomas J.

    1988-01-01

    This is the third annual technical report for the program entitled, Improved Silicon Carbide for Advanced Heat Engines, for the period February 16, 1987 to February 15, 1988. The objective of the original program was the development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines. Injection molding is the forming method selected for the program because it is capable of forming complex parts adaptable for mass production on an economically sound basis. The goals of the revised program are to reach a Weibull characteristic strength of 550 MPa (80 ksi) and a Weibull modulus of 16 for bars tested in 4-point loading. Two tasks are discussed: Task 1 which involves materials and process improvements, and Task 2 which is a MOR bar matrix to improve strength and reliability. Many statistically designed experiments were completed under task 1 which improved the composition of the batches, the mixing of the powders, the sinter and anneal cycles. The best results were obtained by an attritor mixing process which yielded strengths in excess of 550 MPa (80 ksi) and an individual Weibull modulus of 16.8 for a 9-sample group. Strengths measured at 1200 and 1400 C were equal to the room temperature strength. Annealing of machined test bars significantly improved the strength. Molding yields were measured and flaw distributions were observed to follow a Poisson process. The second iteration of the Task 2 matrix experiment is described.

  16. Improved silicon carbide for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Whalen, Thomas J.

    1987-01-01

    This is the second annual technical report entitled, Improved Silicon Carbide for Advanced Heat Engines, and includes work performed during the period February 16, 1986 to February 15, 1987. The program is conducted for NASA under contract NAS3-24384. The objective is the development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines. The fabrication methods used are to be adaptable for mass production of such parts on an economically sound basis. Injection molding is the forming method selected. This objective is to be accomplished in a two-phase program: (1) to achieve a 20 percent improvement in strength and a 100 percent increase in Weibull modulus of the baseline material; and (2) to produce a complex shaped part, a gas turbine rotor, for example, with the improved mechanical properties attained in the first phase. Eight tasks are included in the first phase covering the characterization of the properties of a baseline material, the improvement of those properties and the fabrication of complex shaped parts. Activities during the first contract year concentrated on two of these areas: fabrication and characterization of the baseline material (Task 1) and improvement of material and processes (Task 7). Activities during the second contract year included an MOR bar matrix study to improve mechanical properties (Task 2), materials and process improvements (Task 7), and a Ford-funded task to mold a turbocharger rotor with an improved material (Task 8).

  17. Understanding the Irradiation Behavior of Zirconium Carbide

    SciTech Connect

    Motta, Arthur; Sridharan, Kumar; Morgan, Dane; Szlufarska, Izabela

    2013-10-11

    Zirconium carbide (ZrC) is being considered for utilization in high-temperature gas-cooled reactor fuels in deep-burn TRISO fuel. Zirconium carbide possesses a cubic B1-type crystal structure with a high melting point, exceptional hardness, and good thermal and electrical conductivities. The use of ZrC as part of the TRISO fuel requires a thorough understanding of its irradiation response. However, the radiation effects on ZrC are still poorly understood. The majority of the existing research is focused on the radiation damage phenomena at higher temperatures (>450{degree}C) where many fundamental aspects of defect production and kinetics cannot be easily distinguished. Little is known about basic defect formation, clustering, and evolution of ZrC under irradiation, although some atomistic simulation and phenomenological studies have been performed. Such detailed information is needed to construct a model describing the microstructural evolution in fast-neutron irradiated materials that will be of great technological importance for the development of ZrC-based fuel. The goal of the proposed project is to gain fundamental understanding of the radiation-induced defect formation in zirconium carbide and irradiation response by using a combination of state-of-the-art experimental methods and atomistic modeling. This project will combine (1) in situ ion irradiation at a specialized facility at a national laboratory, (2) controlled temperature proton irradiation on bulk samples, and (3) atomistic modeling to gain a fundamental understanding of defect formation in ZrC. The proposed project will cover the irradiation temperatures from cryogenic temperature to as high as 800{degree}C, and dose ranges from 0.1 to 100 dpa. The examination of this wide range of temperatures and doses allows us to obtain an experimental data set that can be effectively used to exercise and benchmark the computer calculations of defect properties. Combining the examination of radiation

  18. Single Molecule Source Reagents for CVD of Beta Silicon Carbide

    DTIC Science & Technology

    1991-08-31

    silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting point. Use of silicon carbide thin films is hampered, however, by the inability to reproducibly grow stoichiometric films free from excess silicon or carbon. The principal difficulty is that absolutely reproducible flows of the source gases cannot be provided with existing gas flow control equipment. The

  19. A silicon carbide array for electrocorticography and peripheral nerve recording

    NASA Astrophysics Data System (ADS)

    Diaz-Botia, C. A.; Luna, L. E.; Neely, R. M.; Chamanzar, M.; Carraro, C.; Carmena, J. M.; Sabes, P. N.; Maboudian, R.; Maharbiz, M. M.

    2017-10-01

    Objective. Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. Approach. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. Main results. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Significance. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

  20. High precision optical finishing of lightweight silicon carbide aspheric mirror

    NASA Astrophysics Data System (ADS)

    Kong, John; Young, Kevin

    2010-10-01

    Critical to the deployment of large surveillance optics into the space environment is the generation of high quality optics. Traditionally, aluminum, glass and beryllium have been used; however, silicon carbide becomes of increasing interest and availability due to its high strength. With the hardness of silicon carbide being similar to diamond, traditional polishing methods suffer from slow material removal rates, difficulty in achieving the desired figure and inherent risk of causing catastrophic damage to the lightweight structure. Rather than increasing structural capacity and mass of the substrate, our proprietary sub-aperture aspheric surface forming technology offers higher material removal rates (comparable to that of Zerodur or Fused Silica), a deterministic approach to achieving the desired figure while minimizing contact area and the resulting load on the optical structure. The technology performed on computer-controlled machines with motion control software providing precise and quick convergence of surface figure, as demonstrated by optically finishing lightweight silicon carbide aspheres. At the same time, it also offers the advantage of ideal pitch finish of low surface micro-roughness and low mid-spatial frequency error. This method provides a solution applicable to all common silicon carbide substrate materials, including substrates with CVD silicon carbide cladding, offered by major silicon carbide material suppliers. This paper discusses a demonstration mirror we polished using this novel technology. The mirror is a lightweight silicon carbide substrate with CVD silicon carbide cladding. It is a convex hyperbolic secondary mirror with 104mm diameter and approximately 20 microns aspheric departure from best-fit sphere. The mirror has been finished with surface irregularity of better than 1/50 wave RMS @632.8 nm and surface micro-roughness of under 2 angstroms RMS. The technology has the potential to be scaled up for manufacturing capabilities of

  1. Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix

    SciTech Connect

    Dr. Ronald Baney

    2008-12-15

    The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process.l

  2. Field Emission of Thermally Grown Carbon Nanostructures on Silicon Carbide

    DTIC Science & Technology

    2012-03-22

    process, current CNT field emission issues, and patterning of silicon carbide ( SiC ). 2.2. CNT Background 2.2.1. CNT Structure CNT’s basic...density is obtain when S=3h [46] 2.5. Patterning of SiC 2.5.1. Silicon Carbide Properties As a result of its structure and material, SiC has...Its chemical inertness, however, limits the available techniques needed to pattern a SiC wafer. 2.5.2. Silicon Carbide Etching Because SiC

  3. Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals

    DOEpatents

    Peng, Yu-Min; Wang, Jih-Wen; Liue, Chun-Ying; Yeh, Shinn-Horng

    1994-01-01

    A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

  4. Chemical state of fission products in irradiated uranium carbide fuel

    NASA Astrophysics Data System (ADS)

    Arai, Yasuo; Iwai, Takashi; Ohmichi, Toshihiko

    1987-12-01

    The chemical state of fission products in irradiated uranium carbide fuel has been estimated by equilibrium calculation using the SOLGASMIX-PV program. Solid state fission products are distributed to the fuel matrix, ternary compounds, carbides of fission products and intermetallic compounds among the condensed phases appearing in the irradiated uranium carbide fuel. The chemical forms are influenced by burnup as well as stoichiometry of the fuel. The results of the present study almost agree with the experimental ones reported for burnup simulated carbides.

  5. Predicting Two-Dimensional Silicon Carbide Monolayers.

    PubMed

    Shi, Zhiming; Zhang, Zhuhua; Kutana, Alex; Yakobson, Boris I

    2015-10-27

    Intrinsic semimetallicity of graphene and silicene largely limits their applications in functional devices. Mixing carbon and silicon atoms to form two-dimensional (2D) silicon carbide (SixC1-x) sheets is promising to overcome this issue. Using first-principles calculations combined with the cluster expansion method, we perform a comprehensive study on the thermodynamic stability and electronic properties of 2D SixC1-x monolayers with 0 ≤ x ≤ 1. Upon varying the silicon concentration, the 2D SixC1-x presents two distinct structural phases, a homogeneous phase with well dispersed Si (or C) atoms and an in-plane hybrid phase rich in SiC domains. While the in-plane hybrid structure shows uniform semiconducting properties with widely tunable band gap from 0 to 2.87 eV due to quantum confinement effect imposed by the SiC domains, the homogeneous structures can be semiconducting or remain semimetallic depending on a superlattice vector which dictates whether the sublattice symmetry is topologically broken. Moreover, we reveal a universal rule for describing the electronic properties of the homogeneous SixC1-x structures. These findings suggest that the 2D SixC1-x monolayers may present a new "family" of 2D materials, with a rich variety of properties for applications in electronics and optoelectronics.

  6. Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

    NASA Technical Reports Server (NTRS)

    Hossain, T.; Khan, F.; Adesida, I.; Bohn, P.; Rittenhouse, T.; Lienhard, Michael (Technical Monitor)

    2003-01-01

    A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.

  7. Temperature-dependent reflectivity of silicon carbide

    NASA Technical Reports Server (NTRS)

    Ng, Daniel

    1992-01-01

    The spectral reflectivity of a commercial silicon carbide (SiC) ceramic surface was measured at wavelengths from 2.5 to 14.5 microns and at temperatures ranging from 358 to 520 K using a NASA-developed multiwavelength pyrometer. The SiC surface reflectivity was low at the short wavelengths, decreasing to almost zero at 10 microns, then increasing rapidly to a maximum at approximately 12.5 microns, and decreasing gradually thereafter. The reflectivity maximum increased in magnitude with increasing surface temperature. The wavelength and temperature dependence can be explained in terms of the classical dispersion theory of crystals and the Lorentz electron theory. Electronic transitions between the donor state and the conduction band states were responsible for the dispersion. The concentration of the donor state in SiC was determined to be approximately 4 x 10 exp 18 and its ionization energy was determined to be approximately 71 meV.

  8. Condensation of Silicon Carbide in Supernova Ejecta

    NASA Astrophysics Data System (ADS)

    Deneault, Ethan

    2017-07-01

    We present a kinetic model of the formation of silicon carbide (SiC) in the expanding and cooling outflows of Type II supernova ejecta. We assume an ejecta cloud composed of a mixture of Si, C, and O in the gas phase, with the initial temperature, density, and composition as tunable parameters. The condensation of diatomic SiC into (SiC)2 molecules provides the abundance of nucleation sites for the eventual condensation of larger SiC solids and dust grains. We find that the abundance of these nucleation sites, formed after the first 1700 days after the explosion, is strongly governed by the C/Si ratio, the density of the gas, and the rate of cooling in the ejecta.

  9. Method of producing silicon carbide articles

    DOEpatents

    Milewski, John V.

    1985-01-01

    A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

  10. Microwave hybrid synthesis of silicon carbide nanopowders

    SciTech Connect

    Ebadzadeh, Touradj Marzban-Rad, Ehsan

    2009-01-15

    Nanosized silicon carbide powders were synthesised from a mixture of silica gel and carbon through both the conventional and microwave heating methods. Reaction kinetics of SiC formation were found to exhibit notable differences for the samples heated in microwave field and furnace. In the conventional method SiC nanopowders can be synthesised after 105 min heating at 1500 deg. C in a coke-bed using an electrical tube furnace. Electron microscopy studies of these powders showed the existence of equiaxed SiC nanopowders with an average particle size of 8.2 nm. In the microwave heating process, SiC powders formed after 60 min; the powder consisted of a mixture of SiC nanopowders (with two average particle sizes of 13.6 and 58.2 nm) and particles in the shape of long strands (with an average diameter of 330 nm)

  11. Tunable plasticity in amorphous silicon carbide films.

    PubMed

    Matsuda, Yusuke; Kim, Namjun; King, Sean W; Bielefeld, Jeff; Stebbins, Jonathan F; Dauskardt, Reinhold H

    2013-08-28

    Plasticity plays a crucial role in the mechanical behavior of engineering materials. For instance, energy dissipation during plastic deformation is vital to the sufficient fracture resistance of engineering materials. Thus, the lack of plasticity in brittle hybrid organic-inorganic glasses (hybrid glasses) often results in a low fracture resistance and has been a significant challenge for their integration and applications. Here, we demonstrate that hydrogenated amorphous silicon carbide films, a class of hybrid glasses, can exhibit a plasticity that is even tunable by controlling their molecular structure and thereby leads to an increased and adjustable fracture resistance in the films. We decouple the plasticity contribution from the fracture resistance of the films by estimating the "work-of-fracture" using a mean-field approach, which provides some insight into a potential connection between the onset of plasticity in the films and the well-known rigidity percolation threshold.

  12. Amorphization of Silicon Carbide by Carbon Displacement

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.

    2004-05-10

    We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and anti-site defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from interstitial production, plays a significant role in the amorphization.

  13. Stable field emission from nanoporous silicon carbide.

    PubMed

    Kang, Myung-Gyu; Lezec, Henri J; Sharifi, Fred

    2013-02-15

    We report on a new type of stable field emitter capable of electron emission at levels comparable to thermal sources. Such an emitter potentially enables significant advances in several important technologies which currently use thermal electron sources. These include communications through microwave electronics, and more notably imaging for medicine and security where new modalities of detection may arise due to variable-geometry x-ray sources. Stable emission of 6 A cm(-2) is demonstrated in a macroscopic array, and lifetime measurements indicate these new emitters are sufficiently robust to be considered for realistic implementation. The emitter is a monolithic structure, and is made in a room-temperature process. It is fabricated from a silicon carbide wafer, which is formed into a highly porous structure resembling an aerogel, and further patterned into an array. The emission properties may be tuned both through control of the nanoscale morphology and the macroscopic shape of the emitter array.

  14. Development of a silicon carbide sewing thread

    NASA Technical Reports Server (NTRS)

    Sawko, Paul M.; Vasudev, Anand

    1989-01-01

    A silicon carbide (SiC) sewing thread has been designed which consists of a two-ply yarn in a 122 turns-per-meter-twist construction. Two processing aids in thread construction were evaluated. Prototype blankets were sewn using an SiC thread prepared either with polytetrafluoroethylene sizing or with an overwrap of rayon/dacron service yarn. The rayon/dacron-wrapped SiC thread was stronger, as shown by higher break-strength retention and less damage to the outer-mold-line fabric. This thread enables thermal protection system articles to be sewn or joined, or have perimeter close-out of assembled parts when using SiC fabric for high-temperature applications.

  15. A review of oxide, silicon nitride, and silicon carbide brazing

    SciTech Connect

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  16. Hydrothermal corrosion of silicon carbide joints without radiation

    SciTech Connect

    Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; Kim, Young-Jin; Kiggans, James O.; Hinoki, Tatsuya

    2016-09-28

    In this paper, hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti—Si—C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environments without radiation. Finally, the SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.

  17. Silicon carbide tritium permeation barrier for steel structural components.

    SciTech Connect

    Causey, Rion A.; Garde, Joseph Maurico; Buchenauer, Dean A.; Calderoni, Pattrick; Holschuh, Thomas, Jr.; Youchison, Dennis Lee; Wright, Matt; Kolasinski, Robert D.

    2010-09-01

    Chemical vapor deposited (CVD) silicon carbide (SiC) has superior resistance to tritium permeation even after irradiation. Prior work has shown Ultrametfoam to be forgiving when bonded to substrates with large CTE differences. The technical objectives are: (1) Evaluate foams of vanadium, niobium and molybdenum metals and SiC for CTE mitigation between a dense SiC barrier and steel structure; (2) Thermostructural modeling of SiC TPB/Ultramet foam/ferritic steel architecture; (3) Evaluate deuterium permeation of chemical vapor deposited (CVD) SiC; (4) D testing involved construction of a new higher temperature (> 1000 C) permeation testing system and development of improved sealing techniques; (5) Fabricate prototype tube similar to that shown with dimensions of 7cm {theta} and 35cm long; and (6) Tritium and hermeticity testing of prototype tube.

  18. Hydrothermal corrosion of silicon carbide joints without radiation

    NASA Astrophysics Data System (ADS)

    Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; Kim, Young-Jin; Kiggans, James O.; Hinoki, Tatsuya

    2016-12-01

    Hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti-Si-C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environments without radiation. The SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.

  19. Hydrothermal corrosion of silicon carbide joints without radiation

    DOE PAGES

    Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; ...

    2016-09-28

    In this paper, hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti—Si—C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environmentsmore » without radiation. Finally, the SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.« less

  20. Hydrothermal corrosion of silicon carbide joints without radiation

    SciTech Connect

    Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; Kim, Young-Jin; Kiggans, James O.; Hinoki, Tatsuya

    2016-09-28

    In this paper, hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti—Si—C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environments without radiation. Finally, the SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.

  1. Conventional and Microwave Joining of Silicon Carbide Using Displacement Reactions

    NASA Technical Reports Server (NTRS)

    Kingsley, J.; Yiin, T.; Barmatz, M.

    1995-01-01

    Microwave heating was used to join Silicon Carbide rods using a thin TiC /Si tape interlayer . Microwaves quickly heated the rods and tape to temperatures where solid-state displacement reactions between TiC and Si occurred.

  2. Process for preparing fine grain silicon carbide powder

    DOEpatents

    Wei, G.C.

    Method of producing fine-grain silicon carbide powder comprises combining methyltrimethoxysilane with a solution of phenolic resin, acetone and water or sugar and water, gelling the resulting mixture, and then drying and heating the obtained gel.

  3. Impact-resistant silicon-carbide-based ceramic materials

    NASA Astrophysics Data System (ADS)

    Perevislov, S. N.; Bespalov, I. A.

    2017-08-01

    The bullet resistance is determined by an indirect method, by evaluation of time of delay of penetration by bullet of the silicon-carbide-based ceramics obtained by reactive sintering, liquid-phase sintering, and hot pressing.

  4. Conventional and Microwave Joining of Silicon Carbide Using Displacement Reactions

    NASA Technical Reports Server (NTRS)

    Kingsley, J.; Yiin, T.; Barmatz, M.

    1995-01-01

    Microwave heating was used to join Silicon Carbide rods using a thin TiC /Si tape interlayer . Microwaves quickly heated the rods and tape to temperatures where solid-state displacement reactions between TiC and Si occurred.

  5. Tribological properties of silicon carbide in metal removal process

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    This paper reviews material properties of adhesion, friction and wear of single-crystal silicon carbide in contact with metals and alloys involved in a metal removal process such as grinding. The tribological properties in the metal removal processes are divided into properties which remove metal by adhesion between sliding surfaces, and metal removal by silicon carbide sliding against a metal, indenting it, and plowing a series of grooves or furrows. The paper also deals with fracture and deformation characteristics of the silicon carbide surface; the adhesion, friction and metal transfer to silicon carbide is related to the relative chemical activity of the metals. Atomic size and content of alloying elements play a dominant role in controlling adhesion and friction properties of alloys. The friction and abrasive wear decrease as the shear strength of the bulk metal increases.

  6. BETA-SILICON CARBIDE AND ITS POTENTIAL FOR DEVICES

    DTIC Science & Technology

    BETA- SILICON CARBIDE AND ITS POTENTIAL FOR DEVICES. GROWTH OF BETA SIC CRYSTALS FROM SOLUTION USING MOLTEN SI AS SOLVENT. INCREASED RESISTIVITY (FROM 0.5 TO 3.8 OHM/CM) ACCOMPANIED DECREASE IN N CONTAMINATION SOURCES.

  7. Silicon Carbide Threads For High-Temperature Service

    NASA Technical Reports Server (NTRS)

    Sawko, Paul M.; Vasudev, Anand

    1991-01-01

    New thread material outperforms silica. Sewing threads containing silicon carbide (SiC) yarn withstand temperatures of more than 1,100 degrees C. Intended for use in stitching thermally insulating blankets.

  8. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    SciTech Connect

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of

  9. Single-Event Effects in Silicon Carbide Power Devices

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  10. Tribological properties of silicon carbide in metal removal process

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Material properties are considered as they relate to adhesion, friction, and wear of single crystal silicon carbide in contact with metals and alloys that are likely to be involved in a metal removal process such as grinding. Metal removal from adhesion between sliding surfaces in contact and metal removal as a result of the silicon carbide sliding against a metal, indenting into it, and plowing a series of grooves or furrows are discussed. Fracture and deformation characteristics of the silicon carbide surface are also covered. The adhesion, friction, and metal transfer to silicon carbide is related to the relative chemical activity of the metals. The more active the metal, the higher the adhesion and friction, and the greater the metal transfer to silicon carbide. Atomic size and content of alloying elements play a dominant role in controlling adhesion, friction, and abrasive wear properties of alloys. The friction and abrasive wear (metal removal) decrease linearly as the shear strength of the bulk metal increases. They decrease as the solute to solvent atomic radius ratio increases or decreases linearly from unity, and with an increase of solute content. The surface fracture of silicon carbide is due to cleavages of 0001, 10(-1)0, and/or 11(-2)0 planes.

  11. Characterization of silicon carbide and diamond detectors for neutron applications

    NASA Astrophysics Data System (ADS)

    Hodgson, M.; Lohstroh, A.; Sellin, P.; Thomas, D.

    2017-10-01

    The presence of carbon atoms in silicon carbide and diamond makes these materials ideal candidates for direct fast neutron detectors. Furthermore the low atomic number, strong covalent bonds, high displacement energies, wide bandgap and low intrinsic carrier concentrations make these semiconductor detectors potentially suitable for applications where rugged, high-temperature, low-gamma-sensitivity detectors are required, such as active interrogation, electronic personal neutron dosimetry and harsh environment detectors. A thorough direct performance comparison of the detection capabilities of semi-insulating silicon carbide (SiC–SI), single crystal diamond (D–SC), polycrystalline diamond (D–PC) and a self-biased epitaxial silicon carbide (SiC–EP) detector has been conducted and benchmarked against a commercial silicon PIN (Si–PIN) diode, in a wide range of alpha (Am-241), beta (Sr/Y-90), ionizing photon (65 keV to 1332 keV) and neutron radiation fields (including 1.2 MeV to 16.5 MeV mono-energetic neutrons, as well as neutrons from AmBe and Cf-252 sources). All detectors were shown to be able to directly detect and distinguish both the different radiation types and energies by using a simple energy threshold discrimination method. The SiC devices demonstrated the best neutron energy discrimination ratio (E\\max (n=5 MeV)/E\\max (n=1 MeV)  ≈5), whereas a superior neutron/photon cross-sensitivity ratio was observed in the D–PC detector (E\\max (AmBe)/E\\max (Co-60)  ≈16). Further work also demonstrated that the cross-sensitivity ratios can be improved through use of a simple proton-recoil conversion layer. Stability issues were also observed in the D–SC, D–PC and SiC–SI detectors while under irradiation, namely a change of energy peak position and/or count rate with time (often referred to as the polarization effect). This phenomenon within the detectors was non-debilitating over the time period tested (> 5 h) and, as such, stable

  12. Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses

    SciTech Connect

    Gemini, Laura; Hashida, Masaki; Shimizu, Masahiro; Miyasaka, Yasuhiro; Inoue, Shunsuke; Tokita, Shigeki; Sakabe, Shuji; Limpouch, Jiri; Mocek, Tomas

    2013-11-21

    Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600 nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material.

  13. Friction and wear behavior of single-crystal silicon carbide in contact with titanium

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1977-01-01

    Sliding friction experiments were conducted with single crystal silicon carbide in sliding contact with titanium. Results indicate that the friction coefficient is greater in vacuum than in argon and that this is due to the greater adhesion or adhesive transfer in vacuum. Thin films of silicon carbide transferred to titanium also adhered to silicon carbide both in argon at atmospheric pressure and in high vacuum. Cohesive bonds fractured on both the silicon carbide and titanium surfaces. The wear debris of silicon carbide created by fracture plowed the silicon carbide surface in a plastic manner. The friction characteristics of titanium in contact with silicon carbide were sensitive to the surface roughness of silicon carbide, and the friction coefficients were higher for a rough surface of silicon carbide than for a smooth one. The difference in friction results was due to plastic deformation (plowing of titanium).

  14. Thermal properties of wood-derived silicon carbide and copper-silicon carbide composites

    NASA Astrophysics Data System (ADS)

    Pappecena, Kristen E.

    Wood-derived ceramics and composites have been of interest in recent years due to their unique microstructures, which lead to tailorable properties. The porosity and pore size distribution of each wood type is different, which yields variations in properties in the resultant materials. The thermal properties of silicon carbide ceramics and copper-silicon carbide composites derived from wood were studied as a function of their pore structures. Wood was pyrolyzed at temperatures ranging from 300-2400°C to yield porous carbon. The progression toward long-range order was studied as a function of pyrolyzation temperature. Biomorphic silicon carbide (bioSiC) is a porous ceramic material resulting from silicon melt infiltration of these porous carbon materials. BioSiC has potential applicability in many high temperature environments, particularly those in which rapid temperature changes occur. To understand the behavior of bioSiC at elevated temperatures, the thermal and thermo-mechanical properties were studied. The thermal conductivity of bioSiC from five precursors was determined using flash diffusivity at temperatures up to 1100°C. Thermal conductivity results varied with porosity, temperature and orientation, and decreased from 42-13 W/mK for porosities of 43-69%, respectively, at room temperature. The results were compared with to object-oriented finite-element analysis (OOF). OOF was also used to model and understand the heat-flow paths through the complex bioSiC microstructures. The thermal shock resistance of bioSiC was also studied, and no bioSiC sample was found to fail catastrophically after up to five thermal shock cycles from 1400°C to room temperature oil. Copper-silicon carbide composites have potential uses in thermal management applications due to the high thermal conductivity of each phase. Cu-bioSiC composites were created by electrodeposition of copper into bioSiC pores. The detrimental Cu-SiC reaction was avoided by using this room temperature

  15. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  16. Process for coating an object with silicon carbide

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1989-01-01

    A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

  17. Methods for producing silicon carbide architectural preforms

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A. (Inventor); Yun, Hee (Inventor)

    2010-01-01

    Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties for each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.

  18. Material testing of silicon carbide mirrors

    NASA Astrophysics Data System (ADS)

    Witkin, David B.; Palusinski, Iwona A.

    2009-08-01

    The Aerospace Corporation is developing a space qualification method for silicon carbide optical systems that covers material verification through system development. One of the initial efforts has been to establish testing protocols for material properties. Three different tests have been performed to determine mechanical properties of SiC: modulus of rupture, equibiaxial flexural strength and fracture toughness. Testing materials and methods have been in accordance with the respective ASTM standards. Material from four vendors has been tested to date, as part of the MISSE flight program and other programs. Data analysis has focused on the types of issues that are important when building actual components- statistical modeling of test results, understanding batch-to-batch or other source material variations, and relating mechanical properties to microstructures. Mechanical properties are needed as inputs to design trade studies and development and analysis of proof tests, and to confirm or understand the results of non-destructive evaluations of the source materials. Measuring these properties using standardized tests on a statistically valid number of samples is intended to increase confidence for purchasers of SiC spacecraft components that materials and structures will perform as intended at the highest level of reliability.

  19. Thin films in silicon carbide semiconductor devices

    NASA Astrophysics Data System (ADS)

    Ostling, Mikael; Koo, Sang-Mo; Lee, Sang-Kwon; Zetterling, Carl-Mikael; Grishin, Alexander

    2004-12-01

    Silicon carbide (SiC) semiconductor devices have been established during the last decade as very useful high power, high speed and high temperature devices because of their inherent outstanding semiconductor materials properties. Due to its large band gap, SiC possesses a very high breakdown field and low intrinsic carrier concentration, which accordingly makes high voltage and high temperature operation possible. SiC is also suitable for high frequency device applications, because of the high saturation drift velocity and low permittivity. Thin film technology for various functions in the devices has been heavily researched. Suitable thin film technologies for Ohmic and low-resistive contact formation, passivation and new functionality utilizing ferroelectric materials have been developed. In ferroelectrics, the spontaneous polarization can be switched by an externally applied electric field, and thus are attractive for non-volatile memory and sensor applications. A novel integration of Junction-MOSFETs (JMOSFETs) and Nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is realized. SiC JMOSFET controls the drain current effectively from the buried junction gate thereby allowing for a constant current level at elevated temperatures. SiC NVFET has similar functions with non-volatile memory capability due to ferroelectric gate stack, which operated up to 300°C with memory function retained up to 200°C.

  20. Improved silicon carbide for advanced heat engines

    NASA Technical Reports Server (NTRS)

    Whalen, Thomas J.

    1989-01-01

    The development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines is studied. Injection molding was the forming method selected for the program because it is capable of forming complex parts adaptable for mass production on an economically sound basis. The goals were to reach a Weibull characteristic strength of 550 MPa (80 ksi) and a Weibull modulus of 16 for bars tested in four-point loading. Statistically designed experiments were performed throughout the program and a fluid mixing process employing an attritor mixer was developed. Compositional improvements in the amounts and sources of boron and carbon used and a pressureless sintering cycle were developed which provided samples of about 99 percent of theoretical density. Strengths were found to improve significantly by annealing in air. Strengths in excess of 550 MPa (80 ksi) with Weibull modulus of about 9 were obtained. Further improvements in Weibull modulus to about 16 were realized by proof testing. This is an increase of 86 percent in strength and 100 percent in Weibull modulus over the baseline data generated at the beginning of the program. Molding yields were improved and flaw distributions were observed to follow a Poisson process. Magic angle spinning nuclear magnetic resonance spectra were found to be useful in characterizing the SiC powder and the sintered samples. Turbocharger rotors were molded and examined as an indication of the moldability of the mixes which were developed in this program.

  1. Palladium Implanted Silicon Carbide for Hydrogen Sensing

    NASA Technical Reports Server (NTRS)

    Muntele, C. I.; Ila, D.; Zimmerman, R. L.; Muntele, L.; Poker, D. B.; Hensley, D. K.; Larkin, David (Technical Monitor)

    2001-01-01

    Silicon carbide is intended for use in fabrication of high-temperature, efficient hydrogen sensors. Traditionally, when a palladium coating is applied on the exposed surface of SiC, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. We have produced both a palladium coated SiC as well as a palladium, ion implanted SiC sensor. The palladium implantation was done at 500 C into the Si face of 6H, N-type SiC at various energies, and at various fluences. Then, we measured the hydrogen sensitivity response of each fabricated sensor by exposing them to hydrogen while monitoring the current flow across the p-n junction(s), with respect to time. The sensitivity of each sensor was measured at temperatures between 27 and 300 C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behaviour than the SiC sensors produced by Pd deposition. In the Pd-deposited SiC sensors as well as in the ones reported in the literature, the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd-implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100 C. We will present the details and conclusions from the results obtained during this meeting.

  2. Resonant Optical Forces in Silicon Carbide Nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Dongfang; Zia, Rashid

    2012-02-01

    Silicon carbide (SiC) materials are widely used for their exceptional electronic, mechanical, and thermal properties. For example, given its high stiffness to density ratio, SiC is an ideal material for mechanical resonators, and it has been explored for applications in nanoelectromechanical systems (NEMS). SiC also supports strong surface phonon-polariton resonances in the infrared region, which could enable its use for optomechanics. Similar to surface plasmon-polaritons supported by metal-dielectric interfaces, these surface waves at a SiC-vacuum interface can be used to guide and confine intense electromagnetic energy. Here, we investigate the resonant optical forces induced by phonon-polariton modes in different SiC nanostructures. Specifically, we calculate optical forces using the Maxwell Stress Tensor for three geometries: spherical particles, slab waveguides, and rectangular waveguides. We find that the high quality factor phonon-polariton modes in SiC can produce very large forces, more than two orders of magnitude larger than the plasmonic forces in similar metal nanostructures. These strong resonant forces, combined with its mechanical and thermal properties, make SiC a promising material for optomechanical applications.

  3. Large silicon carbide optics for manufacturability

    NASA Astrophysics Data System (ADS)

    Pepi, John W.; Robichaud, Joseph; Milsap, Gary

    2013-09-01

    For space-based use, projected needs are for large optics of the one-meter class that lie under 30 kg/m2 in mass areal density. Current space programs using glass optics, such as Kepler, exhibit a mass of 45 kg/m2, while JWST beryllium optics, including hardware attachment, are as low as 18 kg/m2. Silicon carbide optics can be made lighter than glass, although not as light as beryllium; however, distinct advantages in thermal conductivity and expansion coefficient are evidenced at all temperatures, allowing for greater thermal flux , minimizing gradients and maximizing performance, both earth and space looking. For manufacturability and production, it is desirable to minimize weight while maintaining reasonable cell spacing for open back lightweight design, which will reduce both cost and risk. To this end we perform a trade study to design such an optic that meets both mass and stiffness requirements while being within the regime of ease of manufacture. The design study chooses a hexagonal segment, 1.2 meters across flats (1.4 meters corner to corner), mimicking the JWST design. Polishing, mounting, test, and environmental operational errors are duly considered.

  4. Palladium Implanted Silicon Carbide for Hydrogen Sensing

    NASA Technical Reports Server (NTRS)

    Muntele, C. I.; Ila, D.; Zimmerman, R. L.; Muntele, L.; Poker, D. B.; Hensley, D. K.; Larkin, David (Technical Monitor)

    2001-01-01

    Silicon carbide is intended for use in fabrication of high-temperature, efficient hydrogen sensors. Traditionally, when a palladium coating is applied on the exposed surface of SiC, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. We have produced both a palladium coated SiC as well as a palladium, ion implanted SiC sensor. The palladium implantation was done at 500 C into the Si face of 6H, N-type SiC at various energies, and at various fluences. Then, we measured the hydrogen sensitivity response of each fabricated sensor by exposing them to hydrogen while monitoring the current flow across the p-n junction(s), with respect to time. The sensitivity of each sensor was measured at temperatures between 27 and 300 C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behaviour than the SiC sensors produced by Pd deposition. In the Pd-deposited SiC sensors as well as in the ones reported in the literature, the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd-implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100 C. We will present the details and conclusions from the results obtained during this meeting.

  5. Silicon Carbide Technologies for Lightweighted Aerospace Mirrors

    NASA Astrophysics Data System (ADS)

    Matson, L.; Chen, M.; Deblonk, B.; Palusinski, I.

    The use of monolithic glass and beryllium to produce lightweighted aerospace mirror systems has reached its limits due to the long lead times, high processing costs, environmental effects and launch load/weight requirements. New material solutions and manufacturing processes are required to meet DoD's directed energy weapons, reconnaissance/surveillance, and secured communications needs. Over the past several years the Air Force, MDA, and NASA has focused their efforts on the fabrication, lightweighting, and scale-up of numerous silicon carbide (SiC) based materials. It is anticipated that SiC can be utilized for most applications from cryogenic to high temperatures. This talk will focus on describing the SOA for these (near term) SiC technology solutions for making mirror structural substrates, figuring and finishing technologies being investigated to reduce cost time and cost, and non-destructive evaluation methods being investigated to help eliminate risk. Mirror structural substrates made out of advanced engineered materials (far term solutions) such as composites, foams, and microsphere arrays for ultra lightweighting will also be briefly discussed.

  6. A simple route to nanocrystalline silicon carbide

    NASA Astrophysics Data System (ADS)

    Ying, Yongcheng; Gu, Yunle; Li, Zhefeng; Gu, Hongzhou; Cheng, Luyang; Qian, Yitai

    2004-11-01

    Nanocrystalline silicon carbide has been prepared via reacting magnesium silicide (Mg 2Si) with carbon tetrachloride (CCl 4) in an autoclave at 450-600°C. X-ray diffraction patterns of the products can be indexed as the cubic cell of SiC with the lattice constant, a=4.352 Å, in good agreement with a=4.349 Å (JCPDS card No. 75-0254). The transmission electron microscopy images show that the sample mainly consists of nanoparticles with an average size from 30 to 80 nm co-existing with a small fraction of nanorods and nanowires. Typically the nanorods range from 20 to 40 nm in diameter and the nanowires have diameters of 20 nm and lengths up to 10 μm. The Raman spectrum shows a characteristic sharp peak at 790 cm -1. X-ray photoelectron spectra (XPS) gives an atomic ratio of Si to C as 1.08:1.00 from the quantification of the peak intensities. Photoluminescence spectrum reveals that the SiC sample emits ultraviolet light of 328 nm. A possible mechanism and the influence of temperature on the formation of crystalline SiC are proposed.

  7. Thermal equation of state of silicon carbide

    DOE PAGES

    Wang, Yuejian; Liu, Zhi T. Y.; Khare, Sanjay V.; ...

    2016-02-11

    A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure–volume–temperature (P-V-T) data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as, the ambient bulk modulus KTo = 237(2) GPa, temperature derivative of bulk modulus at constant pressure (∂K/∂T)P = -0.037(4) GPa K-1, volumetric thermal expansivity α(0, T)=a+bT with a = 5.77(1)×10-6 K-1 and b = 1.36(2)×10-8 K-2, and pressure derivative of thermal expansionmore » at constant temperature (∂α/∂P)T =6.53±0.64×10-7 K-1GPa-1. Furthermore, we found the temperature derivative of bulk modulus at constant volume, (∂KT/∂T)V, equal to -0.028(4) GPa K-1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. Lastly, the computed results generally agree well with the experimental values.« less

  8. Ultrahigh-quality silicon carbide single crystals.

    PubMed

    Nakamura, Daisuke; Gunjishima, Itaru; Yamaguchi, Satoshi; Ito, Tadashi; Okamoto, Atsuto; Kondo, Hiroyuki; Onda, Shoichi; Takatori, Kazumasa

    2004-08-26

    Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices. Careful consideration of the thermal conditions in which SiC [0001] is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes), inclusions, small-angle boundaries and long-range lattice warp has been reduced. But some macroscopic defects (about 1-10 cm(-2)) and a large density of elementary dislocations (approximately 10(4) cm(-2)), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12-16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth), to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems.

  9. The diffusion bonding of silicon carbide and boron carbide using refractory metals

    SciTech Connect

    Cockeram, B.V.

    1999-10-01

    Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 {micro}m to 100 {micro}m) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both {alpha}-SiC and {beta}-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the {alpha}-SiC and {beta}-SiC polytypes were similar.

  10. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, G.C.

    1983-10-12

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  11. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, George C.

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  12. Surface Figure Measurement of Silicon Carbide Mirrors at Cryogenic Temperatures

    NASA Technical Reports Server (NTRS)

    Blake, Peter; Mink, Ronald G.; Chambers, John; Robinson, F. David; Content, David; Davila, Pamela

    2005-01-01

    The surface figure of a developmental silicon carbide mirror, cooled to 87 K and then 20 K within a cryostat, was measured with unusually high precision at the Goddard Space Flight Center (GSFC). The concave spherical mirror, with a radius of 600 mm and a clear aperture of 150 mm, was fabricated of sintered silicon carbide. The mirror was mounted to an interface plate representative of an optical bench, made of the material Cesic@, a composite of silicon, carbon, and silicon carbide. The change in optical surface figure as the mirror and interface plate cooled from room temperature to 20 K was 3.7 nm rms, with a standard uncertainty of 0.23 nm in the rms statistic. Both the cryo-change figure and the uncertainty are among the lowest such figures yet published. This report describes the facilities, experimental methods, and uncertainty analysis of the measurements.

  13. Occurrence of airborne silicon carbide fibers during industrial production of silicon carbide.

    PubMed

    Bye, E; Eduard, W; Gjønnes, J; Sørbrøden, E

    1985-04-01

    Airborne dust from the production of silicon carbide has been analyzed for particle morphology and composition. Fibers of alpha silicon carbide were identified by scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometry (EDS) and transmission electron microscopy (TEM) with selected area electron diffraction techniques (SAED). Micrographs taken at high magnification revealed several stacking periods along the fiber axis, and one or more of the polytypes 2H, 4H, or 6H could be distinguished. Preliminary investigations applying SEM showed that 80% of the fibers had diameters of less than 0.5 micron and a length greater than 5 micron. Fiber concentrations were examined by the counting of stationary and personal samples in an optical phase contrast microscope. The fiber levels in the three plants investigated were low and less than 1 fiber/cc of air (10(6) fibers/m3). Dust samples from the handling of raw material, including recycled material, contained up to 5 fibers/cc (5 X 10(6) fibers/m3).

  14. Silicon Carbide Temperature Monitor Processing Improvements. Status Report

    SciTech Connect

    Unruh, Troy Casey; Daw, Joshua Earl; Ahamad Al Rashdan

    2016-01-29

    Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it

  15. Diamond-Silicon Carbide Composite And Method For Preparation Thereof

    DOEpatents

    Qian, Jiang; Zhao, Yusheng

    2005-09-06

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  16. Microwave versus conventional sintering of silicon carbide tiles

    SciTech Connect

    Kass, M.D.; Caughman, J.B.O.; Forrester, S.C.; Akerman, A.

    1997-05-07

    Silicon carbide is being evaluated as an armor material because of its lightweight, high-hardness, and excellent armor efficiency. However, one of the problems associated with silicon carbide is the high cost associated with achieving fully dense tiles. Full density requires either hot pressing and sintering or reaction bonding. Past efforts have shown that hot pressed tiles have a higher armor efficiency than those produced by reaction bonded sintering. An earlier stuy showed that the acoustic properties of fully-dense silicon carbide tiles were enhanced through the use of post-sintered microwave heat treatments. One of the least expensive forming techniques is to isostatically press-and-sinter. In this study, the authors have used microwave energy to densify silicon carbide green bodies. Microwave sintering has been demonstrated to be a very quick way to sinter ceramics such as alumina to exceptionally high densities. Previous work has shown that microwave post treatment of fully-dense reaction bonded silicon carbide tiles significantly improves the acoustic properties of the tiles. These properties include Poisson`s ratio, Young`s modulus, shear modulus, and bulk modulus.

  17. In situ laser reflectometry study of the amorphization of silicon carbide by MeV ion implantation

    NASA Astrophysics Data System (ADS)

    Henkel, T.; Heera, V.; Kögler, R.; Skorupa, W.

    1998-09-01

    In situ laser reflectometry and ex situ Rutherford backscattering spectrometry have been used to investigate the ion fluence and temperature dependence of the amorphization process in silicon carbide induced by 3 MeV I2+ irradiation. A comparative study in silicon showed that damage accumulation in silicon carbide proceeds more gradually in the preliminary stage of amorphization. The amorphization fluence depends weakly on temperature below 300 K but strongly above 300 K. Silicon carbide is amorphized more quickly than silicon at elevated temperatures. At very low temperatures a higher ion fluence for the amorphization of silicon carbide is required in comparison to silicon. Owing to this behavior, different mechanisms of damage growth are assumed to be present in these semiconductors. A critical energy density of 5.6×1024 eV/cm3 for the amorphization of the silicon carbide crystal up to the surface has been found at room temperature. Experimental results are compared with predictions of the models proposed by Carter as well as by Morehead and Crowder.

  18. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    NASA Astrophysics Data System (ADS)

    Zeng, Xiaojun; Liu, Weiliang

    2016-11-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  19. Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

    NASA Technical Reports Server (NTRS)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

    2003-01-01

    Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

  20. Silicon carbide whiskers: Characterization and aerodynamic behaviors

    SciTech Connect

    Cheng, Y.S.; Smith, S.M.; Johnson, N.F.; Powell, Q.H.

    1995-10-01

    Silicon carbide (SiC) whiskers are fiberlike materials with a wide range of industrial applications. Industrial hygiene samplings of the material are taken to monitor and control possible exposures to workers. This study characterizes an SiC whisker in detail, including its width-length distribution, aspect ratio, particle density, and aerodynamic size distribution. The SiC whiskers were aerosolized, and samples from a filter, cascade impactor, and aerosol centrifuge were taken. The diameter-length distribution of SiC fibers determined by electron microscopy from filter samples was found to follow the bivariate lognormal distribution. The aerodynamic size of a fiber aerosol depends not only on the particle dimension and density but also on the orientation of its axis with respect to flow. The results show that the aerodynamic size distribution obtained from the impactor was consistent with the predicted value, assuming the long axis of the fiber was parallel to the flow toward the collection substrate. On the other hand, the aerodynamic size in the aerosol centrifuge was consistent with results for a perpendicular orientation. A larger aerodynamic size (20--25%) was obtained in the case of impactor data as compared with centrifuge data. The respirable fraction estimated from the cascade impactor data was 65%, consistent with the estimate from bivariate analysis (67%) but smaller than the estimated fraction from the aerosol centrifuge (76%). The results show that the data obtained with the bivariate analysis of fiber dimensions had good correlation with the cascade impactor data, and this approach can be used to predict the aerodynamic size distribution and the size-selective fractions for fiber aerosols from filter samples.

  1. Thermal equation of state of silicon carbide

    SciTech Connect

    Wang, Yuejian; Liu, Zhi T. Y.; Khare, Sanjay V.; Collins, Sean Andrew; Zhang, Jianzhong; Wang, Liping; Zhao, Yusheng

    2016-02-11

    A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure–volume–temperature (P-V-T) data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as, the ambient bulk modulus KTo = 237(2) GPa, temperature derivative of bulk modulus at constant pressure (∂K/∂T)P = -0.037(4) GPa K-1, volumetric thermal expansivity α(0, T)=a+bT with a = 5.77(1)×10-6 K-1 and b = 1.36(2)×10-8 K-2, and pressure derivative of thermal expansion at constant temperature (∂α/∂P)T =6.53±0.64×10-7 K-1GPa-1. Furthermore, we found the temperature derivative of bulk modulus at constant volume, (∂KT/∂T)V, equal to -0.028(4) GPa K-1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. Lastly, the computed results generally agree well with the experimental values.

  2. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  3. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE PAGES

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  4. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  5. Kinetics and Mechanisms of Primary and Steady State Creep in B- and Al- Containing Alpha Silicon Carbide

    DTIC Science & Technology

    1989-07-01

    silicon carbide , devoid of sintering aids, creeps by dislocation motion and climb. Silicon carbide containing...impurity substitution in the sintered silicon carbide . Experimental measurements of grain boundary sliding offsets on polycrystalline silicon carbide have... carbide whisker reinforcement has no beneficial effect on the creep resistance of Si3N4, whereas, in the more easily deformed mullite, silicon carbide whisker reinforcement does result in a reduced steady state

  6. Processing, texture and mechanical properties of sintered silicon carbide

    NASA Technical Reports Server (NTRS)

    Landfermann, H.; Hausner, H.

    1988-01-01

    With regard to its favorable properties, in particular those shown at high temperatures, silicon carbide is of great interest for applications related to the construction of engines and turbines. Thus, silicon carbide could replace heat-resisting alloys with the objective to achieve a further increase in operational temperature. The present investigation is concerned with approaches which can provide silicon carbide material with suitable properties for the intended applications, taking into account the relations between characteristics of the raw material, material composition, sinter conditions, and results of the sintering process. The effects of density and texture formation on the mechanical properties are studied. It is found that a dense material with a fine-grained microstructure provides optimal mechanical properties, while any deviation from this ideal condition can lead to a considerable deterioration with respect to the material properties.

  7. Palladium in cubic silicon carbide: Stability and kinetics

    NASA Astrophysics Data System (ADS)

    Roma, Guido

    2009-12-01

    Several technological applications of silicon carbide are concerned with the introduction of palladium impurities. Be it intentional or not, this may lead to the formation of silicides. Not only this process is not well understood, but the basic properties of palladium impurities in silicon carbide, such as solubility or diffusion mechanisms, are far from being known. Here the stability and kinetics of isolated Pd impurities in cubic silicon carbide are studied by first principles calculations in the framework of density functional theory. The preferential insertion sites, as well as the main migration mechanisms, are analyzed and presented here, together with the results for solution and migration energies. The early stages of nucleation are discussed based on the properties of isolated impurities and the smallest clusters.

  8. Implanted bottom gate for epitaxial graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Waldmann, D.; Jobst, J.; Fromm, F.; Speck, F.; Seyller, T.; Krieger, M.; Weber, H. B.

    2012-04-01

    We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.

  9. A study of silicon carbide synthesis from waste serpentine.

    PubMed

    Cheng, T W; Hsu, C W

    2006-06-01

    There are 60000 tons of serpentine wastes produced in year 2004 in Taiwan. This is due to the well-developed joints in the serpentine ore body as well as the stringent requirements of the particle size and chemical composition of serpentine by iron making company. The waste also creates considerable environmental problems. The purpose of this study is reutilization of waste serpentine to produce a high value silica powder after acid leaching. These siliceous microstructure products obtained from serpentine would be responsible for high reactivity and characteristic molecular sieving effect. In this study, the amorphous silica powder was then synthesized to silicon carbide with the C/SiO(2) molar ratio of 3. The experiment results show that silicon carbide can be synthesized in 1550 degrees C. The formed silicon carbide was whisker beta type SiC which can be used as raw materials for industry.

  10. Finite Element Analysis Modeling of Chemical Vapor Deposition of Silicon Carbide

    DTIC Science & Technology

    2014-06-19

    Conference on Computational Fluid Dynamics . 6. de Jong, F. & M. Meyyappan. (1996). Numerical Simulation of Silicon Carbide Chemical Vapor Deposition...FINITE ELEMENT ANALYSIS MODELING OF CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE !! THESIS JUNE 2014 ! Brandon M. Allen...T-14-J-38 ! ! FINITE ELEMENT ANALYSIS MODELING OF CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE !! THESIS Presented to the Faculty Department of

  11. Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide.

    PubMed

    Ridene, Mohamed; Kha, Calvin S; Flipse, Cees F J

    2016-03-29

    In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localized electrons. We show that this interaction is not completely suppressed but is screened by carbon layers grown on-top of silicon carbide. This finding leads to a good qualitative understanding of the experimental results reported on EG on silicon carbide. Our results highlight the presence of the Si localized states and might explain the anomalous Hanle curve and the high values of spin relaxation time in EG.

  12. Ultrathin fiber poly-3-hydroxybutyrate, modified by silicon carbide nanoparticles

    NASA Astrophysics Data System (ADS)

    Olkhov, A. A.; Krutikova, A. A.; Goldshtrakh, M. A.; Staroverova, O. V.; Iordanskii, A. L.; Ischenko, A. A.

    2016-11-01

    The article presents the results of studies the composite fibrous material based on poly-3-hydroxybutyrate (PHB) and nano-size silicon carbide obtained by the electrospinning method. Size distribution of the silicon carbide nanoparticles in the fiber was estimated by X-ray diffraction technique. It is shown that immobilization of the SiC nanoparticles to the PHB fibers contributes to obtaining essentially smaller diameter of fibers, high physical-mechanical characteristics and increasing resistance to degradation in comparison with the fibers of PHB.

  13. High-Q silicon carbide photonic-crystal cavities

    SciTech Connect

    Lee, Jonathan Y.; Lu, Xiyuan; Lin, Qiang

    2015-01-26

    We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

  14. Synthesis of High Purity Sinterable Silicon Carbide Powder

    DTIC Science & Technology

    1989-11-01

    adsorption and diffusion. Molecular diffusion is therefore, and important factor for condensational growth. The rate of condensational growth of a...Silicon Carbide Hydrogen Chloride Water Total Temperature. °F Pressure, psia Mol Frac Vapor Molecular Wt. GPM SCFH SLM Total H, 42.05 42.05 70...Silicon Carbide Hydrogen Chloride Water 6.77 24.31 37.28 Total 6.77 24.31 37.28 Temperature, °F Pressure, psia Mol Frac Vapor Molecular Wt

  15. Electronic states in epitaxial graphene fabricated on silicon carbide

    SciTech Connect

    Davydov, S. Yu.

    2011-08-15

    An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of {approx}0.01-0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is {approx}10{sup -3}-10{sup -2}e per graphene atom.

  16. Wear particles of single-crystal silicon carbide in vacuum

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Sliding friction experiments, conducted in vacuum with silicon carbide /000/ surface in contact with iron based binary alloys are described. Multiangular and spherical wear particles of silicon carbide are observed as a result of multipass sliding. The multiangular particles are produced by primary and secondary cracking of cleavage planes /000/, /10(-1)0/, and /11(-2)0/ under the Hertzian stress field or local inelastic deformation zone. The spherical particles may be produced by two mechanisms: (1) a penny shaped fracture along the circular stress trajectories under the local inelastic deformation zone, and (2) attrition of wear particles.

  17. Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

    NASA Technical Reports Server (NTRS)

    Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

    1986-01-01

    A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

  18. The Active Oxidation of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers, Dwight L.

    2009-01-01

    The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive

  19. The thermal conductivity of carbon coated silicon carbide fibers embedded in a silicon carbide matrix

    SciTech Connect

    Beecher, S.C.; Dinwiddie, R.B.; Lowden, R.A.

    1993-12-31

    The room temperature thermal conductivity has been measured for a series of composite materials composed of carbon coated silicon carbide (SiC) fibers embedded in a SiC matrix. The composite samples consisted of 0/30{degree} bi-directional plain weave Nicalon fibers coated with varying thicknesses of pyrolitic carbon and infiltrated with SiC by the forced flow chemical vapor infiltration process to form the matrix. The fiber volume fraction was held constant at 0.423 {plus_minus} 0.012 and the from 0.03 {mu}m to 0.983 {mu}m, with the fibers of one sample left uncoated. Results transverse to fiber direction show significant differences with the introduction and subsequent increase in the carbon coating thickness. The thermal conductivity decreased for all the coated samples compared to the uncoated sample coating thickness compared to the sample with the thinnest carbon coating.

  20. Evaluation of microstructural damage and alteration of polytypes to determine the aging of silicon carbide

    SciTech Connect

    Koenig, T. W.; Mishra, B.; Olson, D. L.; Meshi, L.; Foxman, Z.; Landau, A.; Riesterer, J. L.; Kennedy, J. R.

    2013-01-25

    Irradiated silicon carbide (SiC) exhibits higher carrier content but a decrease in conductivity with increased irradiation. It was theorized that this conflicting data was due to structural damage due to irradiation. This theory was supported by the fact that non-irradiated 50{mu}m thick SiC is transparent for visible light and the higher the irradiation dose, the material of the same thickness became less transparent. However, changes in microscopy and polyforms observed by transmission electron microscopy in SiC due to irradiation were minor. Although existence of different polymorphs of SiC was documented, direct proof of the proposed theory has not yet been achieved.

  1. Sputtering and codeposition of silicon carbide with deuterium

    NASA Astrophysics Data System (ADS)

    Causey, Rion A.

    2003-03-01

    Due to its excellent thermal properties, silicon carbide is being considered as a possible plasma-facing material for fusion devices. If used as a plasma-facing material, the energetic hydrogen isotope ions and charge-exchanged neutrals escaping from the plasma will sputter the silicon carbide. To assess the tritium inventory problems that will be generated by the use of this material, it is necessary that we know the codeposition properties of the redeposited silicon carbide. To determine the codeposition properties, the deuterium plasma experiment at Sandia National Laboratories in Livermore, California has been used to directly compare the deuterium sputtering and codeposition of silicon carbide with that of graphite. A Penning discharge at a flux of 6×10 19 D/m 2 and an energy of ≈300 eV was used to sputter silicon and carbon from a pair of 0.05 m diameter silicon carbide disks. The removal rate of deuterium gas from the fixed volume of the system isolated from all other sources and sinks was used to measure the codeposition probability (probability that a hydrogen isotope atom will be removed through codeposition per ion striking the sample surface). A small catcher plate used to capture a fraction of the codeposited film was analyzed using Auger spectroscopy. This analysis showed the film to begin with a high carbon to silicon ratio due to preferential sputtering of the carbon. As the film became thicker, the ratio of the depositing material changed over to the (1:1) value that must eventually be attained.

  2. Silicon carbide alloys: Research reports in materials science

    SciTech Connect

    Dobson, M.M.

    1986-01-01

    The book draws from work done on other silicon materials, silicon nitrides and sialons, to emphasize the importance of the SiC system. A comprehensive treatment of non-oxide silicon ceramics, this work is of special interest to researchers involved in ceramics, materials science, and high-temperature technology. This book covers the alloys of silicon carbide with aluminum nitride. Crystallography and experimental methods including sample preparation, furnace methods, X-ray and electron diffraction, optical and electron microscopy and chemical analysis are covered.

  3. Research and Development on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide-Based Device Structures

    DTIC Science & Technology

    1990-12-01

    0W " -Annual Letter Report- N,4 Research and Developmen. on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and...Microwave Frequency Silicon Carbide -Based Device Structures Supported under Grant #N00014-88-K-0341/P00002 Office of the Chief of Naval Research Report...SUBTITLE Research and Development on Advanced S. FUNDING NUMBERS Silicon Carbide Thin Filn.Growth Technl.ques and R&T:212k003---03 Fabrication of High

  4. Silicon carbide synthesis with energy pulses

    NASA Astrophysics Data System (ADS)

    Majni, G.; Mengucci, P.; D'Anna, E.; Leggieri, G.; Luches, A.; Nassisi, V.

    1989-08-01

    Polycrystalline SiC layers were synthesized through nanosecond pulse heating of thin carbon films deposited on single-crystalline silicon wafers. The samples were submitted to electron beam irradiation (25 keV, 50 ns) at various current densities in vacuum (˜10-4mbar) and to XeCl excimer laser pulses (308 nm, 15ns) in air. Rutherford backscattering spectrometry (RBS) showed that in the e-beam annealed samples mixing of the elements at the interface starts at current densities of about 1200 A/cm2. The mixed layer thickness increases almost linearly with current density. From the RBS spectra a composition of the intermixed layers close to the SiC compound was deduced. Transmission electron microscopy (TEM) and electron diffraction studies clearly evidenced the formation of SiC polycrystals. Using the XeCl excimer laser, intermixing of the deposited C film with the Si substrate was observed after a single 0.3 J/cm2 pulse. Further analysis evidenced the formation of SiC nanocrystals, embedded in a diamond film.

  5. Growth mechanism of silicon carbide films on silicon substrates using C 60 carbonization

    NASA Astrophysics Data System (ADS)

    Chen, Dong; Workman, Richard; Sarid, Dror

    1995-12-01

    Silicon carbide films were grown on silicon substrates using C 60 molecules as a carbon source. The grown films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and infrared spectroscopy (IRS). Also, using SiO 2 as a mask on the Si substrate, a patterned SiC film was grown. Growth and defect mechanisms are discussed and compared with conventional CVD carbidizing methods.

  6. A silicon carbide room-temperature single-photon source

    NASA Astrophysics Data System (ADS)

    Castelletto, S.; Johnson, B. C.; Ivády, V.; Stavrias, N.; Umeda, T.; Gali, A.; Ohshima, T.

    2014-02-01

    Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×106 counts s-1) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices.

  7. MAGNESIUM PRECIPITATION AND DIFUSSION IN Mg+ ION IMPLANTED SILICON CARBIDE

    SciTech Connect

    Jiang, Weilin; Jung, Hee Joon; Kovarik, Libor; Wang, Zhaoying; Roosendaal, Timothy J.; Zhu, Zihua; Edwards, Danny J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2015-03-02

    As a candidate material for fusion reactor applications, silicon carbide (SiC) undergoes transmutation reactions under high-energy neutron irradiation with magnesium as the major metallic transmutant; the others include aluminum, beryllium and phosphorus in addition to helium and hydrogen gaseous species. Calculations by Sawan et al. predict that at a dose of ~100 dpa (displacements per atom), there is ~0.5 at.% Mg generated in SiC. The impact of these transmutants on SiC structural stability is currently unknown. This study uses ion implantation to introduce Mg into SiC. Multiaxial ion-channeling analysis of the as-produced damage state indicates a lower dechanneling yield observed along the <100> axis. The microstructure of the annealed sample was examined using high-resolution scanning transmission electron microscopy. The results show a high concentration of likely non-faulted tetrahedral voids and possible stacking fault tetrahedra near the damage peak. In addition to lattice distortion, dislocations and intrinsic and extrinsic stacking faults are also observed. Magnesium in 3C–SiC prefers to substitute for Si and it forms precipitates of cubic Mg2Si and tetragonal MgC2. The diffusion coefficient of Mg in 3C–SiC single crystal at 1573 K has been determined to be 3.8 ± 0.4E-19 m2/s.

  8. Sintered silicon carbide molded body and method for its production

    NASA Technical Reports Server (NTRS)

    Omori, M.; Sendai, M.; Ohira, K.

    1984-01-01

    Sintered silicon carbide shapes are described. They are produced by using a composition containing an oxide of at least one element chosen from the group: Li, Be, Mg, Si, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Ba, Tc, Ta, W and Th as a supplement to known sintering aids.

  9. The development of silicon carbide-based power electronics devices

    NASA Astrophysics Data System (ADS)

    Hopkins, Richard H.; Perkins, John F.

    1995-01-01

    In 1989 Westinghouse created an internally funded initiative to develop silicon carbide materials and device technology for a variety of potential commercial and military applications. Westinghouse saw silicon carbide as having the potential for dual use. For space applications, size and weight reductions could be achieved, together with increased reliability. Terrestrially, uses in harsh-temperature environments would be enabled. Theoretically, the physical and electrical properties of silicon carbide were highly promising for high-power, high-temperature, radiation-hardened electronics. However, bulk material with the requisite electronic qualities was not available, and the methods needed to produce a silicon carbide wafer—to fabricate high-quality devices—and to transition these technologies into a commercial product were considered to be a high-risk investment. It was recognized that through a collaborative effort, the CCDS could provide scientific expertise in several areas, thus reducing this risk. These included modeling of structures, electrical contacts, dielectrics, and epitaxial growth. This collaboration has been very successful, with developed technologies being transferred to Westinghouse.

  10. Crystal Lattice Dynamics of Various Silicon-Carbide Polytypes

    DTIC Science & Technology

    2001-01-01

    basis of these results. 2. SILICON CARBIDE POLYTYPES It is well known that close packed spheres form a face centred cubic structure or a hexagonal...polytypism. The simplest polytype, called 3C, has the cubic structure of sphalerite. The polytype 2H has the hexagonal structure of wurtzite. The

  11. Nuclear breeder reactor fuel element with silicon carbide getter

    DOEpatents

    Christiansen, David W.; Karnesky, Richard A.

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  12. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2007-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  13. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

    2011-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  14. High Temperature Slow Crack Growth in Silicon Carbide.

    DTIC Science & Technology

    1978-12-18

    The purpose of this investigation was to identify by survey the probable maximum use temperatures and stress levels for Sintered Alpha Silicon ... Carbide in expected marine (salt containing) and oxidizing environments as a function of sample surface condition. The results of this survey should be

  15. Radiation stable, hybrid, chemical vapor infiltration/preceramic polymer joining of silicon carbide components

    NASA Astrophysics Data System (ADS)

    Khalifa, Hesham E.; Koyanagi, Takaaki; Jacobsen, George M.; Deck, Christian P.; Back, Christina A.

    2017-04-01

    This paper reports on a nuclear-grade joining material for bonding of silicon carbide-based components. The joint material is fabricated via a hybrid preceramic polymer, chemical vapor infiltration process. The joint is comprised entirely of β-SiC and results in excellent mechanical and permeability performance. The joint strength, composition, and microstructure have been characterized before and after irradiation to 4.5 dpa at 730 °C in the High Flux Isotope Reactor. The hybrid preceramic polymer-chemical vapor infiltrated joint exhibited complete retention of shear strength and no evidence of microstructural evolution or damage was detected following irradiation.

  16. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications, phase 2

    NASA Astrophysics Data System (ADS)

    Sundberg, G. J.; Vartabedian, A. M.; Wade, J. A.; White, C. S.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP'ed Si3N4 with 4wt% Y2O3 (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  17. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  18. Direct visualization of photoinduced glassy dynamics on the amorphous silicon carbide surface by STM movies

    NASA Astrophysics Data System (ADS)

    Nguyen, Duc; Nienhaus, Lea; Haasch, Richard T.; Lyding, Joseph; Gruebele, Martin

    2015-03-01

    Glassy dynamics can be controlled by light irradiation. Sub- and above-bandgap irradiation cause numerous phenomena in glasses including photorelaxation, photoexpansion, photodarkening and pohtoinduced fluidity. We used scanning tunneling microscopy to study surface glassy dynamics of amorphous silicon carbide irradiated with above- bandgap 532 nm light. Surface clusters of ~ 4-5 glass forming unit in diameter hop mostly in a two-state fashion, both without and with irradiation. Upon irradiation, the average surface hopping activity increases by a factor of 3. A very long (~1 day) movie of individual clusters with varying laser power density provides direct evidence for photoinduced enhanced hopping on the glass surfaces. We propose two mechanisms: heating and electronic for the photoenhanced surface dynamics.

  19. Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide

    SciTech Connect

    Benyagoub, A.; Audren, A.

    2009-10-15

    Although silicon carbide has attracted extensive investigations of ion irradiation effects at low energy owing to its potential use in harsh environments, very few works were carried out in the field of ion irradiation at high energy. A recent preliminary study exploring the combination of low and high energy ion irradiation effects in silicon carbide revealed that the damaged layer formed by low energy ion irradiation can undergo an epitaxial recrystallization under subsequent swift heavy ion irradiation. The present paper is devoted to the investigation of the mechanisms at the origin of this phenomenon by performing additional experiments. A detailed analysis of the kinetics of this recrystallization effect demonstrates that the latter cannot be explained by the models proposed for the well-known ion-beam-induced epitaxial crystallization process. Furthermore, it is found that this effect can be accounted for by a mechanism combining the melting within the ion tracks of the amorphous zones through a thermal spike process and their subsequent epitaxial recrystallization initiated from the neighboring crystalline regions wherever the size of the latter surpasses a certain critical value.

  20. Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide

    SciTech Connect

    Kawarada, H.; Wild, C.; Herres, N.; Locher, R.; Koidl, P.; Nagasawa, H.

    1997-04-01

    We have deposited epitaxial diamond films with very low angular spread on epitaxial {beta}-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6{degree} have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the {beta}-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity. {copyright} {ital 1997 American Institute of Physics.}

  1. Protective coating for alumina-silicon carbide whisker composites

    DOEpatents

    Tiegs, Terry N.

    1989-01-01

    Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

  2. Diffusion Bonding of Silicon Carbide Ceramics using Titanium Interlayers

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, James D.

    2006-01-01

    Robust joining approaches for silicon carbide ceramics are critically needed to fabricate leak free joints with high temperature mechanical capability. In this study, titanium foils and physical vapor deposited (PVD) titanium coatings were used to form diffusion bonds between SiC ceramics using hot pressing. Silicon carbide substrate materials used for bonding include sintered SiC and two types of CVD SiC. Microscopy results show the formation of well adhered diffusion bonds. The bond strengths as determined from pull tests are on the order of several ksi, which is much higher than required for a proposed application. Microprobe results show the distribution of silicon, carbon, titanium, and other minor elements across the diffusion bond. Compositions of several phases formed in the joint region were identified. Potential issues of material compatibility and optimal bond formation will also be discussed.

  3. Method of fabricating silicon carbide coatings on graphite surfaces

    DOEpatents

    Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

    1994-07-26

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

  4. Method of fabricating silicon carbide coatings on graphite surfaces

    DOEpatents

    Varacalle, Jr., Dominic J.; Herman, Herbert; Burchell, Timothy D.

    1994-01-01

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

  5. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    SciTech Connect

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  6. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    NASA Astrophysics Data System (ADS)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.; Iacopi, Francesca

    2016-07-01

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High-resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  7. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    SciTech Connect

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  8. Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

    NASA Technical Reports Server (NTRS)

    Ciszek, T. F.; Schwuttke, G. H. (Inventor)

    1979-01-01

    A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

  9. Annealing behavior between room temperature and 2000 deg. C of deep level defects in electron-irradiated n-type 4H silicon carbide

    SciTech Connect

    Alfieri, G.; Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.

    2005-08-15

    The annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature and an isochronal annealing series from 100 to 2000 deg. C has been performed. The DLTS measurements, which have been carried out in the temperature range from 120 to 630 K after each annealing step, revealed the presence of six electron traps located in the energy range of 0.45-1.6 eV below the conduction-band edge (E{sub c}). The most prominent and stable ones occur at E{sub c}-0.70 eV (labeled Z{sub 1/2}) and E{sub c}-1.60 eV(EH{sub 6/7}). After exhibiting a multistage annealing process over a wide temperature range, presumably caused by reactions with migrating defects, a significant fraction of both Z{sub 1/2} and EH{sub 6/7} (25%) still persists at 2000 deg. C and activation energies for dissociation in excess of 8 and {approx}7.5 eV are estimated for Z{sub 1/2} and EH{sub 6/7}, respectively. On the basis of these results, the identity of Z{sub 1/2} and EH{sub 6/7} is discussed and related to previous assignments in the literature.

  10. Silicon Nitride and Silicon Carbide Ceramics Structural Components in Avionics and Space

    NASA Astrophysics Data System (ADS)

    Berroth, Karl

    2014-06-01

    In the paper, Silicon Nitride and silicon carbide components for avionics and space are described. These lightweight stiff and strong materials with low and very low CTE and high thermal conductivity provide means for new designs and higher resolution in passive structures for optical instruments. Material properties and application examples are discussed.

  11. Development of a continuous spinning process for producing silicon carbide - silicon nitride precursor fibers

    NASA Technical Reports Server (NTRS)

    1985-01-01

    An apparatus was designed for the continuous production of silicon carbide - silicon nitride precursor fibers. The precursor polymer can be fiberized, crosslined and pyrolyzed. The product is a metallic black fiber with the composition of the type C sub x Si sub y n sub z. Little, other than the tensile strength and modulus of elasticity, is known of the physical properties.

  12. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    SciTech Connect

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  13. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

    PubMed Central

    2012-01-01

    Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs. PMID:23171576

  14. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.

    PubMed

    Kim, Tae-Youb; Huh, Chul; Park, Nae-Man; Choi, Cheol-Jong; Suemitsu, Maki

    2012-11-21

    Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

  15. Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

    PubMed

    Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

    2011-12-01

    Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

  16. Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1988-01-01

    The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

  17. Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1988-01-01

    The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

  18. Continuous method of producing silicon carbide fibers

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Nguyen, Kimmai Thi (Inventor); Rabe, James Alan (Inventor)

    1999-01-01

    This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

  19. Novel fabrication of silicon carbide based ceramics for nuclear applications

    NASA Astrophysics Data System (ADS)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  20. Friction, deformation and fracture of single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1977-01-01

    Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface. Anisotropic friction, deformation and fracture on the basal plane are primarily controlled by the slip system and cleavage.

  1. Evaluation of silicon carbide fiber/titanium composites

    NASA Technical Reports Server (NTRS)

    Jech, R. W.; Signorelli, R. A.

    1979-01-01

    Izod impact, tensile, and modulus of elasticity were determined for silicon carbide fiber/titanium composites to evaluate their potential usefulness as substitutes for titanium alloys or stainless steel in stiffness critical applications for aircraft turbine engines. Variations in processing conditions and matrix ductility were examined to produce composites having good impact strength in both the as-fabricated condition and after air exposure at elevated temperature. The impact strengths of composites containing 36 volume percent silicon carbide (SiC) fiber in an unalloyed (A-40) titanium matrix were found to be equal to unreinforced titanium-6 aluminum-4 vanadium alloy; the tensile strengths of the composites were marginally better than the unreinforced unalloyed (A-70) matrix at elevated temperature, though not at room temperature. At room temperature the modulus of elasticity of the composites was 48 percent higher than titanium or its alloys and 40 percent higher than that of stainless steel.

  2. Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, J. Douglas

    2007-01-01

    A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

  3. Preferential killing of cancer cells using silicon carbide quantum dots.

    PubMed

    Mognetti, Barbara; Barberis, Alessandro; Marino, Silvia; Di Carlo, Francesco; Lysenko, Vladimir; Marty, Olivier; Géloën, Alain

    2010-12-01

    Silicon carbide quantum dots are highly luminescent biocompatible nanoparticles whose properties might be of particular interest for biomedical applications. In this study we investigated Silicon Carbide Quantum Dots (3C-SiC QDs) cellular localisation and influence on viability and proliferation on oral squamous carcinoma (AT-84 and HSC) and immortalized cell lines (S-G). They clearly localize into the nuclei, but the presence of 3C-SiC QDs in culture medium provoke morphological changes in cultured cells. We demonstrate that 3C-SiC QDs display dose- and time-dependent selective cytotoxicity on cancer versus immortalized cells in vitro. Since one of the limitations of classical antineoplastic drugs is their lack of selectivity, these results open a new way in the search for antiproliferative drugs.

  4. Room temperature quantum emission from cubic silicon carbide nanoparticles.

    PubMed

    Castelletto, Stefania; Johnson, Brett C; Zachreson, Cameron; Beke, David; Balogh, István; Ohshima, Takeshi; Aharonovich, Igor; Gali, Adam

    2014-08-26

    The photoluminescence (PL) arising from silicon carbide nanoparticles has so far been associated with the quantum confinement effect or to radiative transitions between electronically active surface states. In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45-500 nm can host other point defects responsible for photoinduced intrabandgap PL. We demonstrate that these nanoparticles exhibit single photon emission at room temperature with record saturation count rates of 7 × 10(6) counts/s. The realization of nonclassical emission from SiC nanoparticles extends their potential use from fluorescence biomarker beads to optically active quantum elements for next generation quantum sensing and nanophotonics. The single photon emission is related to single isolated SiC defects that give rise to states within the bandgap.

  5. PREPARATION OF B-MODIFICATION SILICON CARBIDE ALLOYED WITH VARIOUS IMPURITIES,

    DTIC Science & Technology

    The beta-modification of silicon carbide can be obtained by any of the following methods: (1) synthesis from silicon and carbon (graphite) at 1400...certain metals, a process based on the substantial temperature variation of the solubility of silicon carbide in fused metals; beta-SiC is obtained in

  6. Synthesis of multifilament silicon carbide fibers by chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Revankar, Vithal; Hlavacek, Vladimir

    1991-01-01

    A process for development of clean silicon carbide fiber with a small diameter and high reliability is presented. An experimental evaluation of operating conditions for SiC fibers of good mechanical properties and devising an efficient technique which will prevent welding together of individual filaments are discussed. The thermodynamic analysis of a different precursor system was analyzed vigorously. Thermodynamically optimum conditions for stoichiometric SiC deposit were obtained.

  7. Meteoritic silicon carbide - Pristine material from carbon stars

    NASA Technical Reports Server (NTRS)

    Lewis, Roy S.; Amari, Sachiko; Anders, Edward

    1990-01-01

    All five gases in interstellar silicon carbide grains have grossly nonsolar isotopic and elemental abundances that vary with grain size but are strikingly similar to calculated values for the helium-burning shell of low-mass carbon stars. Apparently these grains formed in carbon-star envelopes, and were impregnated with noble gas ions from a stellar wind. Meteoritic SiC provides a detailed record of nuclear and chemical processes in carbon stars.

  8. 6H Silicon Carbide Photoconductive Switches for High Power Applications

    DTIC Science & Technology

    2006-11-01

    6H SILICON CARBIDE PHOTOCONDUCTIVE SWITCHES FOR HIGH POWER APPLICATIONS W. C. Nunnally*, N. Islam, K. Kelkar & C. Fessler Photonics for Radars...PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Photonics for Radars and Optical Systems...switches. Additional work by the UMC Photonics for Radar and Optical Systems (PROS) group has demonstrated that the relatively new material of

  9. Microstructure and properties of IN SITU toughened silicon carbide

    SciTech Connect

    De Jonghe, Lutgard C.; Ritchie, Robert O.; Zhang, Xiao Feng

    2003-05-01

    A silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing b-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features.

  10. Mechanism of combustion synthesis of silicon carbide

    NASA Astrophysics Data System (ADS)

    Narayan, J.; Raghunathan, R.; Chowdhury, R.; Jagannadham, K.

    1994-06-01

    The mechanism of self-propagating high-temperature synthesis (SHS) or combustion synthesis of SiC has been investigated using pellets consisting of silicon and carbon powders. The combustion reaction was initiated by rapidly heating the pellet on a graphite strip. The reaction products were analyzed using scanning and transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. The results show that it is possible to produce β-SiC without any residual silicon and carbon. Occasionally, a very small number density of α-SiC precipitates embedded in the β-SiC matrix was observed. Based upon the microstructural features, it is proposed that the formation of SiC involves the dissolution of carbon into liquid silicon, diffusion of C into liquid silicon, and subsequent precipitation of SiC. The size of the SiC crystallites is determined by the diffusion coefficient of carbon in liquid silicon and the time available for SiC precipitation. The activation enthalpy for the SHS process is estimated to be 59±3 kcal/mol.

  11. Process for preparing fine grain silicon carbide powder

    DOEpatents

    Wei, G.C.

    Finely divided silicon carbide powder is obtained by mixing colloidal silica and unreacted phenolic resin in either acetone or methanol, evaporating solvent from the obtained solution to form a gel, drying and calcining the gel to polymerize the phenolic resin therein, pyrolyzing the dried and calcined gel at a temperature in the range of 500 to 1000/sup 0/C, and reacting silicon and carbon in the pyrolyzed gel at a temperature in the range of 1550 to 1700/sup 0/C to form the powder.

  12. Improvement of contact resistances on plasma-exposed silicon carbide

    NASA Astrophysics Data System (ADS)

    Cheung, R.; Hay, J.; van der Drift, E.; Gao, W.

    2000-11-01

    We demonstrate improvements in the specific contact resistance of unannealed ohmic contacts by at least one order of magnitude on undoped 6H-SiC (silicon carbide, SiC). The improved contacts with a specific resistance of 0.3 Ω cm 2 have been fabricated on SiC surfaces exposed to an argon plasma at -80 V for 2.5 min. Under these plasma conditions, the top monolayers of the plasma-exposed SiC surface is silicon rich as revealed by X-ray photoelectron spectroscopy, and the surface roughness is decreased by a factor of 2 from atomic force microscopy analysis.

  13. Numerical Simulation of the Detonation Propagation in Silicon Carbide Shell

    NASA Astrophysics Data System (ADS)

    Balagansky, Igor; Terechov, Anton

    2013-06-01

    Last years it was experimentally shown that in condensed high explosive charges (HE) placed in silicon carbide shell with sound velocity greater than the detonation velocity in HE, there may be observed interesting phenomena. Depending on the conditions, as an increase or decrease of the detonation velocity and pressure on the detonation front can be observed. There is also the distortion of the detonation front until the formation of a concave front. For a detailed explanation of the physical nature of the phenomenon we have provided numerical simulation of detonation wave propagation in Composition B HE charge, which was placed in silicon carbide shell. Modeling was performed with Ansys Autodyn in 2D-axis symmetry posting on an Eulerian mesh. Special attention was paid to selection of the parameters values in Lee-Tarver kinetic equation for HE and choice of constants to describe behavior of the ceramics. For comparison, also we have carried out the modeling of propagation of detonation in a completely similar assembly with brass shell. The simulation results agree well with the experimental data. In particular, in silicon carbide shell distortion of the detonation front was observed. A characteristic feature of the process is the pressure waves propagating in the direction of the axis of symmetry on the back surface of the detonation front.

  14. Bonding and Integration Technologies for Silicon Carbide Based Injector Components

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay

    2008-01-01

    Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding, titanium interlayers (PVD and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness (10, 20, and 50 microns), processing time and temperature, and cooling rates were investigated. Microprobe analysis was used to identify the phases in the bonded region. For bonds that were not fully reacted an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner titanium interlayers and/or longer processing times resulted in stable and compatible phases that did not contribute to microcracking and resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

  15. Silicon Carbide Mounts for Fabry-Perot Interferometers

    NASA Technical Reports Server (NTRS)

    Lindemann, Scott

    2011-01-01

    Etalon mounts for tunable Fabry- Perot interferometers can now be fabricated from reaction-bonded silicon carbide structural components. These mounts are rigid, lightweight, and thermally stable. The fabrication of these mounts involves the exploitation of post-casting capabilities that (1) enable creation of monolithic structures having reduced (in comparison with prior such structures) degrees of material inhomogeneity and (2) reduce the need for fastening hardware and accommodations. Such silicon carbide mounts could be used to make lightweight Fabry-Perot interferometers or could be modified for use as general lightweight optical mounts. Heretofore, tunable Fabry-Perot interferometer structures, including mounting hardware, have been made from the low-thermal-expansion material Invar (a nickel/iron alloy) in order to obtain the thermal stability required for spectroscopic applications for which such interferometers are typically designed. However, the high mass density of Invar structures is disadvantageous in applications in which there are requirements to minimize mass. Silicon carbide etalon mounts have been incorporated into a tunable Fabry-Perot interferometer of a prior design that originally called for Invar structural components. The strength, thermal stability, and survivability of the interferometer as thus modified are similar to those of the interferometer as originally designed, but the mass of the modified interferometer is significantly less than the mass of the original version.

  16. Method for removing oxide contamination from silicon carbide powders

    DOEpatents

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  17. Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

    SciTech Connect

    Naderi, N.; Hashim, M.R.

    2013-06-01

    Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. The optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.

  18. Ceramic composites reinforced with modified silicon carbide whiskers

    DOEpatents

    Tiegs, Terry N.; Lindemer, Terrence B.

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  19. Barrier properties of nano silicon carbide designed chitosan nanocomposites.

    PubMed

    Pradhan, Gopal C; Dash, Satyabrata; Swain, Sarat K

    2015-12-10

    Nano silicon carbide (SiC) designed chitosan nanocomposites were prepared by solution technique. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) were used for studying structural interaction of nano silicon carbide (SiC) with chitosan. The morphology of chitosan/SiC nanocomposites was investigated by field emission scanning electron microscope (FESEM), and high resolution transmission electron microscope (HRTEM). The thermal stability of chitosan was substantially increased due to incorporation of stable silicon carbide nanopowder. The oxygen permeability of chitosan/SiC nanocomposites was reduced by three folds as compared to the virgin chitosan. The chemical resistance properties of chitosan were enhanced due to the incorporation of nano SiC. The biodegradability was investigated using sludge water. The tensile strength of chitosan/SiC nanocomposites was increased with increasing percentage of SiC. The substantial reduction in oxygen barrier properties in combination with increased thermal stability, tensile strength and chemical resistance properties; the synthesized nanocomposite may be suitable for packaging applications.

  20. The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

    NASA Technical Reports Server (NTRS)

    Liu, Chung-Chiun

    1994-01-01

    Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

  1. Model of boron diffusion from gas phase in silicon carbide

    SciTech Connect

    Aleksandrov, O. V.; Mokhov, E. N.

    2011-06-15

    Boron diffusion from the gas phase in silicon carbide is described on the basis of a two-component model. 'Shallow' boron, i.e., boron at silicon sites, is a slow component with a high surface concentration. Its diffusivity is proportional to the concentration of positively charged intrinsic point defects, which are presumably interstitial silicon atoms. 'Deep' boron, i.e., impurity-defect pairs of boron-carbon vacancy, is a fast component with lower surface concentration. The ratio between the surface concentrations of the components depends on the pressure of silicon or carbon vapors in the gas phase. The diffusion and interaction of components are described by the set of diffusion-reaction equations. The diffusion retardation observed on the concentration-profile tail is related to the capture of impurity-defect pairs and excess vacancies by traps of background impurities and defects.

  2. Aligned silicon carbide nanowire crossed nets with high superhydrophobicity.

    PubMed

    Niu, Jun Jie; Wang, Jian Nong; Xu, Qian Feng

    2008-06-01

    Aligned silicon carbide nanowire crossed nets (a-SiCNWNs) were directly synthesized by using a vapor-solid reaction at 1100 degrees C. Zinc sulfide was used as catalyst to assist the growth of a-SiCNWNs with small size and crystal structure. After functionalization with perfluoroalkysilane, a-SiCNWNs showed excellent superhydrophobic property with a high water contact angle more than 156 +/- 2 degrees , compared to random nanowires (147 +/- 2 degrees ) and pure silicon wafers (101 +/- 2 degrees ). The topographic roughness and chemical modification with CF 2/CF 3 groups contributed the better superhydrophobicity. Furthermore, the as-grown SiCNWNs can be scraped off and coated on other substrates such as pure silicon wafers. The novel nanowire coating with good superhydrophobicity displays extensive applications in silicon-related fields such as solar cells, radar, etc.

  3. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    NASA Technical Reports Server (NTRS)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  4. Single Molecule Source Reagents for Chemical Vapor Deposition of B- Silicon Carbide

    DTIC Science & Technology

    1992-12-10

    vapor deposition of stoichiometric Beta silicon carbide . Four single molecule sources were synthesized, their decomposition pathways studied, and their...utility in Beta- silicon carbide CVD investigated. Dramatic differences in the CVD process resulted from small changes in the reagent structure. A...strained cyclic molecule, 1,3-disilacyclobutane, allowed growth of a Beta- silicon carbide film at a temperature >300 deg C lower than was possible with a

  5. Tensile Strengths of Silicon Carbide (SiC) Under Shock Loading

    DTIC Science & Technology

    2001-03-01

    The present work was initiated to measure and compare tensile strengths (i.e., spall thresholds) of five different types/varieties of silicon carbide materials...France. Spall strengths of these five different silicon carbide materials were measured by performing plane shock wave experiments to a maximum impact...investigation is that spall strength of silicon carbide , irrespective of its manufacturing process, improves initially to a certain impact stress level

  6. Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

    SciTech Connect

    Muzha, A.; Fuchs, F.; Simin, D.; Astakhov, G. V.; Tarakina, N. V.; Trupke, M.; Soltamov, V. A.; Mokhov, E. N.; Baranov, P. G.; Dyakonov, V.; and others

    2014-12-15

    Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical, and biological processes.

  7. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide.

    PubMed

    Fuchs, F; Stender, B; Trupke, M; Simin, D; Pflaum, J; Dyakonov, V; Astakhov, G V

    2015-07-07

    Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

  8. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

    NASA Astrophysics Data System (ADS)

    Fuchs, F.; Stender, B.; Trupke, M.; Simin, D.; Pflaum, J.; Dyakonov, V.; Astakhov, G. V.

    2015-07-01

    Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

  9. Polymeric synthesis of silicon carbide with microwaves.

    PubMed

    Aguilar, Juan; Urueta, Luis; Valdez, Zarel

    2007-01-01

    The aim of this work is conducting polymeric synthesis with microwaves for producing beta-SiC. A polymeric precursor was prepared by means of hydrolysis and condensation reactions from pheniltrimethoxysilane, water, methanol, ammonium hydroxide and chloride acid. The precursor was placed into a quartz tube in vacuum; pyrolysis was carried out conventionally in a tube furnace, and by microwaves at 2.45 GHz in a multimode cavity. Conventional tests took place in a scheme where temperature was up to 1500 degrees C for 120 minutes. Microwave heating rate was not controlled and tests lasted 60 and 90 minutes, temperature was around 900 degrees C. Products of the pyrolysis were analyzed by means of x-ray diffraction; in the microwave case the diffraction patterns showed a strong background of either very fine particles or amorphous material, then infrared spectroscopy was also employed for confirming carbon bonds. In both processes beta-SiC was found as the only produced carbide.

  10. Affordable Fabrication and Properties of Silicon Carbide-Based Interpenetrating Phase Composites

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay

    1998-01-01

    An affordable processing technique for the fabrication of silicon carbide-based interpenetrating phase composites (IPCs) is presented. This process consists of the production of microporous carbon preforms and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture for which methods to control pore volume and pore size have been established. The process gives good control of microstructure and morphology of silicon carbide-based composite materials. Room and high temperature mechanical properties (flexural strength, compressive strength, and flexural creep) of low and high silicon-silicon carbide composites will be discussed.

  11. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    NASA Astrophysics Data System (ADS)

    Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

    2014-08-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

  12. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide.

    PubMed

    Riedel, D; Fuchs, F; Kraus, H; Väth, S; Sperlich, A; Dyakonov, V; Soltamova, A A; Baranov, P G; Ilyin, V A; Astakhov, G V

    2012-11-30

    Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nat. Mater. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.

  13. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers.

    PubMed

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Wood, Barry; Iacopi, Francesca

    2014-08-15

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

  14. Nanoscale engineering of radiation tolerant silicon carbide.

    PubMed

    Zhang, Yanwen; Ishimaru, Manabu; Varga, Tamas; Oda, Takuji; Hardiman, Chris; Xue, Haizhou; Katoh, Yutai; Shannon, Steven; Weber, William J

    2012-10-14

    Radiation tolerance is determined by how effectively the microstructure can remove point defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of stacking faults (SFs) has significantly enhanced recombination of interstitials and vacancies, leading to self-healing of irradiation-induced defects. While single crystal SiC readily undergoes an irradiation-induced crystalline to amorphous transformation at room temperature, the nano-engineered SiC with a high-density of SFs exhibits more than an order of magnitude increase in radiation resistance. Molecular dynamics simulations of collision cascades show that the nano-layered SFs lead to enhanced mobility of interstitial Si atoms. The remarkable radiation resistance in the nano-engineered SiC is attributed to the high-density of SFs within nano-sized grain structures that significantly enhance point defect annihilation.

  15. Status of silicon carbide composites for fusion

    SciTech Connect

    Snead, L.L.; Jones, R.H.; Kohyama, A.

    1996-04-01

    An effort is now underway to design an irradiation creep experiment involving SiC composites and SiC fibers. In order to successfully design such an experiment, it is necessary to review and assess the available data for monolithic SiC to establish the possible bounds of creep behavior for the composite. The data available show that monolithic SiC will indeed creep at a higher rate under irradiation compared to that of thermal creep, and surprisingly, it will do so in a temperature-dependant manner that is typical of metals.

  16. The addition of silicon carbide to surrogate nuclear fuel kernels made by the internal gelation process

    NASA Astrophysics Data System (ADS)

    Hunt, R. D.; Hunn, J. D.; Birdwell, J. F.; Lindemer, T. B.; Collins, J. L.

    2010-06-01

    The US Department of Energy plans to use the internal gelation process to make tristructural isotropic (TRISO)-coated transuranic (TRU) fuel particles. The focus of this work is to develop TRU fuel kernels with high crush strengths, good ellipticity, and adequately dispersed silicon carbide (SiC). The submicron SiC particles in the TRU kernels are to serve as getters for excess oxygen and to potentially sequester palladium, rhodium, and ruthenium, which could damage the coatings during irradiation. Zirconium oxide microspheres stabilized with yttrium were used as surrogates because zirconium and TRU microspheres from the internal gelation process are amorphous and encounter similar processing problems. The hardness of SiC required modifications to the experimental system that was used to make uranium carbide kernels. Suitable processing conditions and equipment changes were identified so that the SiC could be homogeneously dispersed in gel spheres for subsequent calcination into strong spherical kernels.

  17. Plasma Deposition of Silicon Carbide Thin Films.

    DTIC Science & Technology

    1987-08-20

    1987 Contract No. F49620-84-C-0063 August 20, 1987 Air Force Office of Scientific Research Bolling Air Force Base Washington, DC 20332 Captain Kevin...1987 Air Force Office of Scientific Research Bolling Air Force Base Washington, DC 20332 Captain Kevin J. Malloy Program Manager Westinghouse R&D Center...hydrocarbon species with silicon surfaces . At the outset of the program, very little work had been done in this area, so the research methods had to be

  18. Exposure to Fibres, Crystalline Silica, Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry

    PubMed Central

    Føreland, S.; Bye, E.; Bakke, B.; Eduard, W.

    2008-01-01

    Objectives: The aim of this study was to assess personal exposure to fibres, crystalline silica, silicon carbide (SiC) and sulphur dioxide in the Norwegian SiC industry. Methods: Approximately 720 fibre samples, 720 respirable dust samples and 1400 total dust samples were collected from randomly chosen workers from the furnace, processing and maintenance departments in all three Norwegian SiC plants. The respirable dust samples were analysed for quartz, cristobalite and non-fibrous SiC content. Approximately 240 sulphur dioxide samples were collected from workers in the furnace department. Results: The sorting operators from all plants, control room and cleaning operators in Plant A and charger, charger/mix and payloader operators in Plant C had a geometric mean (GM) of fibre exposure above the Norwegian occupational exposure limit (OEL) (0.1 fibre cm−3). The cleaner operators in Plant A had the highest GM exposure to respirable quartz (20 μg m−3). The charger/mix operators in Plant C had the highest GM exposure to respirable cristobalite (38 μg m−3) and the refinery crusher operators in Plant A had the highest GM exposure to non-fibrous SiC (0.65 mg m−3). Exposure to the crystalline silica and non-fibrous SiC was generally low and between 0.4 and 2.1% of the measurements exceeded the OELs. The cleaner operators in Plant A had the highest GM exposure to respirable dust (1.3 mg m−3) and total dust (21 mg m−3). GM exposures for respirable dust above the Norwegian SiC industry-specific OEL of 0.5 mg m−3 were also found for refinery crusher operators in all plants and mix, charger, charger/mix and sorting operators in Plant C. Only 4% of the total dust measurements exceeded the OEL for nuisance dust of (10 mg m−3). Exposure to sulphur dioxide was generally low. However, peaks in the range of 10–100 p.p.m. were observed for control room and crane operators in Plants A and B and for charger and charger/mix operators in Plant C. Conclusion: Workers in

  19. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide

    SciTech Connect

    Zhang, Yanwen; Ishimaru, Manabu; Varga, Tamas; Oda, Takuji; Hardiman, Christopher M.; Xue, Haizhou; Katoh, Yutai; Shannon, Steven; Weber, William J.

    2012-08-14

    Radiation tolerance is determined by how effectively the microstructure can remove point defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of stacking faults (SFs) has significantly enhanced recombination of interstitials and vacancies, leading to selfhealing of irradiation-induced defects. While single crystal SiC readily undergoes an irradiationinduced crystalline to amorphous transformation at room temperature, the nano-engineered SiC with a high-density of SFs exhibits more than an order of magnitude increase in radiation resistance. Molecular dynamics simulations of collision cascades show that the nano-layered SFs lead to enhanced mobility of interstitial Si atoms. The remarkable radiation resistance in the nano-engineered SiC is attributed to the high-density of SFs within nano-sized grain structures that significantly enhance point defect annihilation.

  20. Radiation-tolerant joining technologies for silicon carbide ceramics and composites

    SciTech Connect

    Katoh, Yutai; Snead, Lance L.; Cheng, Ting; Shih, Chunghao; Lewis, W. Daniel; Koyanagi, Takaaki; Hinoki, Tatsuya; Henager, Charles H.; Ferraris, Monica

    2014-05-01

    Silicon carbide (SiC) for nuclear structural applications, whether in the monolithic ceramic or composite form, will require a robust joining technology capable of withstanding the harsh nuclear environment. This paper presents significant progress made towards identifying and processing irradiation-tolerant joining methods for nuclear-grade SiC. In doing so, a standardized methodology for carrying out joint testing has been established consistent with the small volume samples mandated by neutron irradiation testing. Candidate joining technologies were limited to those that provide low induced radioactivity and included titanium diffusion bonding, Ti–Si–C MAX-phase joining, calcia–alumina glass–ceramic joining, and transient eutectic-phase SiC joining. Samples of these joints were irradiated in the Oak Ridge National Laboratory High Flux Isotope Reactor at 500 or 800 °C, and their microstructure and mechanical properties were compared to pre-irradiation conditions. Within the limitations of statistics, all joining methodologies presented retained their joint mechanical strength to ~3 dpa at 500 °C, thus indicating the first results obtained on irradiation-stable SiC joints. Finally, under the more aggressive irradiation conditions (800 °C, ~5 dpa), some joint materials exhibited significant irradiation-induced microstructural evolution; however, the effect of irradiation on joint strength appeared rather limited.

  1. Research and Development on Advanced Silicon Carbide Thin Film Growth Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide-Based Device Structures

    DTIC Science & Technology

    1991-12-01

    AD-A243 531IIII!IIHUHllAlll| DTIC Annual Letter Report EL Vr DECA S C Research and Development on Advanced Silicon Carbide Thin Film Growth...Techniques and Fabrication of High Power and Microwave Frequency Silicon Carbide -Based Device Structures Supported under Grant #N00014-88-K-0341/P00002 Office...Letter l/,1- 2 3 lj9 l 4. TITLE AND SUBTITLE Research and Develp~nt on Advanced S. FUNDING NUMBERS Silicon Carbide Thin Film .Growth Techniques and R&T

  2. Gas-phase formation of silicon carbides, oxides, and sulphides from atomic silicon ions

    NASA Technical Reports Server (NTRS)

    Bohme, Diethard K.; Wlodek, Stanislaw; Fox, Arnold

    1989-01-01

    A systematic experimental study of the kinetics and mechanisms of the chemical reactions in the gas phase between ground-state Si(+)2p and a variety of astrophysical molecules. The aim of this study is to identify the reactions which trigger the formation of chemical bonds between silicon and carbon, oxygen and sulphur, and the chemical pathways which lead to further molecular growth. Such knowledge is valuable in the identification of new extraterrestrial silicon-bearing molecules and for an assessment of the gas-phase transition from atomic silicon to silicon carbide and silicate grain particles in carbon-rich and oxygen-rich astrophysical environments.

  3. Spin-photon entanglement interfaces in silicon carbide defect centers

    NASA Astrophysics Data System (ADS)

    Economou, Sophia E.; Dev, Pratibha

    2016-12-01

    Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

  4. Spin-photon entanglement interfaces in silicon carbide defect centers.

    PubMed

    Economou, Sophia E; Dev, Pratibha

    2016-12-16

    Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

  5. Liquid-Liquid Phase Transition in Nanoconfined Silicon Carbide.

    PubMed

    Wu, Weikang; Zhang, Leining; Liu, Sida; Ren, Hongru; Zhou, Xuyan; Li, Hui

    2016-03-02

    We report theoretical evidence of a liquid-liquid phase transition (LLPT) in liquid silicon carbide under nanoslit confinement. The LLPT is characterized by layering transitions induced by confinement and pressure, accompanying the rapid change in density. During the layering transition, the proportional distribution of tetracoordinated and pentacoordinated structures exhibits remarkable change. The tricoordinated structures lead to the microphase separation between silicon (with the dominant tricoordinated, tetracoordinated, and pentacoordinated structures) and carbon (with the dominant tricoordinated structures) in the layer close to the walls. A strong layer separation between silicon atoms and carbon atoms is induced by strong wall-liquid forces. Importantly, the pressure confinement phase diagram with negative slopes for LLPT lines indicates that, under high pressure, the LLPT is mainly confinement-induced, but under low pressure, it becomes dominantly pressure-induced.

  6. Subsurface damage of single crystalline silicon carbide in nanoindentation tests.

    PubMed

    Yan, Jiwang; Gai, Xiaohui; Harada, Hirofumi

    2010-11-01

    The response of single crystalline silicon carbide (SiC) to a Berkovich nanoindenter was investigated by examining the indents using a transmission electron microscope and the selected area electron diffraction technique. It was found that the depth of indentation-induced subsurface damage was far larger than the indentation depth, and the damaging mechanism of SiC was distinctly different from that of single crystalline silicon. For silicon, a broad amorphous region is formed underneath the indenter after unloading; for SiC, however, no amorphous phase was detected. Instead, a polycrystalline structure with a grain size of ten nanometer level was identified directly under the indenter tip. Micro cracks, basal plane dislocations and possible cross slips were also found around the indent. These finding provide useful information for ultraprecision manufacturing of SiC wafers.

  7. Exciton Resonances in Novel Silicon Carbide Polymers

    NASA Astrophysics Data System (ADS)

    Burggraf, Larry; Duan, Xiaofeng

    2015-05-01

    A revolutionary technology transformation from electronics to excitionics for faster signal processing and computing will be advantaged by coherent exciton transfer at room temperature. The key feature required of exciton components for this technology is efficient and coherent transfer of long-lived excitons. We report theoretical investigations of optical properties of SiC materials having potential for high-temperature excitonics. Using Car-Parinello simulated annealing and DFT we identified low-energy SiC molecular structures. The closo-Si12C12 isomer, the most stable 12-12 isomer below 1100 C, has potential to make self-assembled chains and 2-D nanostructures to construct exciton components. Using TDDFT, we calculated the optical properties of the isomer as well as oligomers and 2-D crystal formed from the isomer as the monomer unit. This molecule has large optical oscillator strength in the visible. Its high-energy and low-energy transitions (1.15 eV and 2.56 eV) are nearly pure one-electron silicon-to-carbon transitions, while an intermediate energy transition (1.28 eV) is a nearly pure carbon-to-silicon one-electron charge transfer. These results are useful to describe resonant, coherent transfer of dark excitons in the nanostructures. Research supported by the Air Force Office of Scientific Research.

  8. Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

    NASA Astrophysics Data System (ADS)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.

    2017-02-01

    An epitaxial 1-3-μm-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500°C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality 100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase.

  9. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOEpatents

    Glatzmaier, Gregory C.

    1994-01-01

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  10. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOEpatents

    Glatzmaier, G.C.

    1994-06-28

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

  11. Synthesis of silicon carbide at room temperature from colloidal suspensions of silicon dioxide and carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Zhukalin, D. A.; Tuchin, A. V.; Kulikova, T. V.; Bityutskaya, L. A.

    2015-11-01

    Experimental and theoretical approaches were used for the investigation of mechanisms and conditions of self-organized nanostructures formation in the drying drop of the mixture of colloidal suspensions of nanoscale amorphous silicon dioxide and carbon nanotubes. The formation of rodlike structures with diameter 250-300nm and length ∼4pm was revealed. The diffraction analysis of the obtained nanostructures showed the formation of the silicon carbide phase at room temperature.

  12. Continuous synthesis of silicon carbide whiskers

    NASA Astrophysics Data System (ADS)

    Choi, Heon-Jin; Lee, June-Gunn

    1995-04-01

    Experimental synthesis of SiC whiskers coupled with thermodynamic calculations revealed the preferred reaction routes for the efficient synthesis of SiC whiskers. This formed the basis for the design of a continuous reactor, which consists of a boat-train loaded with silica-carbon mixture and iron-coated graphite substrate above it in an alumina-tube reactor. High-quality SiC whiskers have been grown with diameters of 1-3 micron. The yield was about 30% based on the silicon input as SiO2 and output as SiC whiskers. This demonstrates the feasibility of continuous SiC whiskers production without the additional processes of purification and classification.

  13. Silicon Carbide Emitter Turn-Off Thyristor

    DOE PAGES

    Wang, Jun; Wang, Gangyao; Li, Jun; ...

    2008-01-01

    A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

  14. Microstructural Evolution of Chloride-Cleaned Silicon Carbide Aluminum Composites

    NASA Astrophysics Data System (ADS)

    Adeosun, S. O.; Akpan, E. I.; Gbenebor, O. P.; Balogun, S. A.

    2016-02-01

    This study examines the synergy between reinforcement surface modifications on the evolution of microstructures of AA6011-silicon carbide particle (SiCp) composites in multidirectional solidification. Silicon carbide particles (SiCp) were cleaned with ammonium chloride, tin(II) chloride, sodium chloride, and palladium(II) chloride and used as reinforcement to cast AA6011-SiCp composites by applying the stir casting method. A scanning electron microscope and x-ray diffractometer were used to investigate the morphology and phases present, respectively, in the composite material. Results show that wetting agents were effective as they inhibited the formation of Al4C3 in all modified composites. The modified SiCp was found to have varying effects on the morphology, dendrite arm size and direction, size and configuration of AlFeSi, and the amount of eutectic silicon depending on the concentration of the reagent and cleaning time. The highest effect was shown by the use of 40 g/L of tin(II) chloride. The composites had short dendritic arms, good interfacial interaction, and only a few crystals of AlFeSi.

  15. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  16. Nuclear transformation of Chlamydomonas reinhardtii with silicon carbide fibers

    SciTech Connect

    Dunahay, T.G. )

    1992-01-01

    Efficient nuclear transformation of cell wall-deficient strains of the green alga Chlamydomonas reinhardtii can be accomplished by vortexing the cells in the presence of glass beads and polyethylene glycol (Kindle 1990 PNAS 87:1228). Intact (walled) cells can also be transformed using this protocol, but at very low efficiencies. Two recent reports have described the use of silicon carbide fibers to mediate DNA entry into plant suspension cells (Kaeppler et al. 1990 Plant Cell Rep. 9:414; Asano et al. 1991 Plant Sci. 79:247). The author has found that nuclear transformation efficiencies of walled cells of C. reinhardtii can be increased 3 to 10 fold by vortexing the cells in the presence of silicon carbide fibers and PEG. Using a modification of the glass bead transformation procedure, the wild-type nitrate reductase structural gene was used to complement a NR-deficient mutant of C. reinhardtii, nit-1-305. The transformation efficiency increased with longer vortexing times, although the absolute number of transformants varied between experiments, ranging from 10 to 40 transformants per 10[sup 7] cells. In contrast to vortexing with glass beads, cell viability was very high, with greater than 80% cell survival even after vortexing for 10 minutes. Neither cell death nor transformation efficiency increased when cell wall-deficient mutants (cw15 nit-1-305) were used as compared to intact cells. Experiments are in progress to test the applicability of silicon carbide-mediated transformation to other algal strains for which cell wall mutants or protoplasting procedures are unavailabile.

  17. Fabrication of nanostructures on silicon carbide surface and microgroove sidewall using 800-nm femtosecond laser

    NASA Astrophysics Data System (ADS)

    Khuat, Vanthanh; Chen, Tao; Dao, Vanluu

    2015-07-01

    Nanoripples and nanoparticles have been fabricated on the surface of a silicon carbide sample with the irradiation of an 800-nm femtosecond laser in an underwater environment. When a linearly polarized laser was used, the nanoripples were perpendicular to the polarization direction of the incident laser, and the period of the nanoripples was dependent on the number of pulses. When a circularly polarized laser was used, nanoparticles with a diameter of approximately 80 nm were formed. In addition, we observed two kinds of nanoripples on the sidewall of the silicon carbide microgroove fabricated by femtosecond laser irradiation followed by chemical wet etching. When the polarization direction was aligned perpendicular to the writing direction, ripples parallel to the surface of the sample were formed. We attribute the formation of this kind of ripple to interference of the incident laser and the reflected wave. When the polarization direction was aligned parallel to the writing direction, the ripples are perpendicular to the surface of the sample. We attribute the formation of this kind of ripple to interference of incident laser and bulk electron plasma wave. A scanning electron microscope equipped with an energy dispersive X-ray spectroscope was employed to characterize the morphology of the structures.

  18. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    DOEpatents

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  19. Decoupling of silicon carbide optical sensor response for temperature and pressure measurements

    NASA Astrophysics Data System (ADS)

    Chakravarty, A.; Quick, N. R.; Kar, A.

    2007-10-01

    Single crystal silicon carbide is a chemically inert transparent material with superior oxidation-resistant properties at elevated temperatures compared to black polycrystalline silicon carbide substrates. These improved properties make crystalline silicon carbide a good optical sensor material for harsh environments such as combustion chambers and turbine systems. Interferometric optical sensors are orders of magnitude more sensitive than electrical sensors and are proposed for these applications. Silicon carbide itself behaves as a Fabry-Pérot etalon eliminating the need for an external interferometer for any measurement using this silicon carbide as a sensor. The principle of the optical sensor in this study is the temperature- and pressure-dependent refractive index of silicon carbide, which can be used to determine the temperatures and pressures of gases that are in contact with silicon carbide. Interference patterns produced by a silicon carbide (4H-SiC) wafer due to multiple reflections of a helium-neon laser beam of wavelength of 632.8nm have been obtained at temperatures up to 500°C and pressures up to 600psi. The pattern changes for the same gas at different temperatures and pressures and for different gases at the same temperature and pressure. The refractive index at the wafer-gas interface is calculated from the interference pattern and the refractive index gradients with respect to temperature and pressure, respectively, are also determined. Decoupling temperature and pressure using these gradients and the measured reflectivity data are discussed in this paper.

  20. THE CRYSTAL STRUCTURE OF THE NEW SILICON CARBIDE POLYMORPH 69R,

    DTIC Science & Technology

    The 69R polymorph is one of the 32 silicon carbide polymorphs recently discovered by us. The space group is R3m and the unit cell is hexagonal with...and in two industrial silicon carbide crystal plates. They all pair with the fundamental type 6H. The five ways of pairing are: 6H + 69R + 87R, 6H

  1. Study of Nitrogen Concentration in Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Wang, Hui; Yan, Cheng-Feng; Kong, Hai-Kuan; Chen, Jian-Jun; Xin, Jun; Shi, Er-Wei; Yang, Jian-Hua

    2013-06-01

    This work focused on studying the nitrogen concentration ( C N) in SiC. The variations of C N in the synthesis of SiC powder as well as the transport during SiC crystal growth have been investigated for broad ranges of temperature and Ar pressure. Before SiC crystal growth, SiC powders were synthesized from high-purity silicon and carbon powders. The concentrations of nitrogen, free C, and free Si in the as-prepared powders were all measured. C N in the SiC source powder decreased with increasing temperature and decreasing Ar pressure, whereas it did not show a remarkable trend with the molar ratio of free Si to free C. SiC crystal was then grown by the physical vapor transport (PVT) technique using the as-prepared powder. The distribution of C N in the remaining material indirectly indicated the temperature field of crystal growth. In addition, compared with introducing N2 during SiC crystal growth, doping with nitrogen during synthesis of the SiC source powder might be a better method to control C N in SiC crystals.

  2. Diffusion and impurity segregation in hydrogen-implanted silicon carbide

    NASA Astrophysics Data System (ADS)

    Barcz, A.; Kozubal, M.; Jakieła, R.; Ratajczak, J.; Dyczewski, J.; Gołaszewska, K.; Wojciechowski, T.; Celler, G. K.

    2014-06-01

    Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its

  3. Diffusion and impurity segregation in hydrogen-implanted silicon carbide

    SciTech Connect

    Barcz, A.; Kozubal, M.; Ratajczak, J.; Gołaszewska, K.; Celler, G. K.

    2014-06-14

    Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H{sup +} implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 10{sup 16}, 1 × 10{sup 17}, or 2 × 10{sup 17} ion/cm{sup 2}, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 10{sup 16} O atoms/cm{sup 2} situated at a depth close to that of the peak of the implanted H{sup +}. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain

  4. Heat transfer to a silicon carbide/water nanofluid.

    SciTech Connect

    Yu, W.; France , D. M.; Smith, D. S.; Singh, D.; Timofeeva, E. V.; Routbort, J. L.; Univ. of Illinois at Chicago

    2009-07-01

    Heat transfer experiments were performed with a water-based nanofluid containing 170-nm silicon carbide particles at a 3.7% volume concentration and having potential commercial viability. Heat transfer coefficients for the nanofluid are presented for Reynolds numbers ranging from 3300 to 13,000 and are compared to the base fluid water on the bases of constant Reynolds number, constant velocity, and constant pumping power. Results were also compared to predictions from standard liquid correlations and a recently altered nanofluid correlation. The slip mechanisms of Brownian diffusion and thermophoresis postulated in the altered correlation were investigated in a series of heating and cooling experiments.

  5. Dynamic consolidation of aluminum-silicon carbide composites

    SciTech Connect

    Rabin, B.H.; Korth, G.E.; Williamson, R.L.

    1990-01-01

    Dynamic consolidation was investigated as a potential method for producing P/M metal matrix composites. In this study, 2124 aluminum powders were mixed with silicon carbide particulate and consolidated using explosives. Numerical simulations were performed to provide insight into the consolidation process and to aid in the selection of experimental conditions. The microstructure of the as-consolidated product was dependent upon processing variables. Careful control of the shock parameters allowed full density, crack free composites to be achieved in cylindrical geometries. Although full density was obtained, low fracture strengths suggested a lack of interparticle bonding, probably resulting from the limited ability to redistribute surface oxides during consolidation. 10 refs., 9 figs.

  6. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  7. Isotope Generated Electron Density in Silicon Carbide Direct Energy Converters

    DTIC Science & Technology

    2006-10-01

    Electricity, Year 3 Report for DOE contract, DE FG07-001D13927, August 2003. 22. Brown, P. M . Betavoltaic batteries. Journal of New Energy 2001, 5 (4...TECHL PUB (2 COPIES ) ATTN AMSRD-ARL-CI-OK-TL TECHL LIB (2 COPIES) ATTN AMSRD-ARL-SE-DE M LITZ (10 COPIES) ATTN AMSRD-ARL-SE-DE K...Isotope Generated Electron Density in Silicon Carbide Direct Energy Converters by Marc Litz and Kara Blaine ARL-TR-3964 October 2006

  8. Pulmonary effects of exposures in silicon carbide manufacturing.

    PubMed Central

    Peters, J M; Smith, T J; Bernstein, L; Wright, W E; Hammond, S K

    1984-01-01

    Chest x rays, smoking histories, and pulmonary function tests were obtained for 171 men employed in the manufacturing of silicon carbide. A lifetime exposure to respirable particulates (organic and inorganic fractions) and sulphur dioxide was estimated for each worker. Chest x ray abnormalities were related to respirable particulates (round opacities) and to age and smoking (linear opacities). Pulmonary function was affected by respirable particulates (FVC) and by sulphur dioxide and smoking (FEV1). Pleural thickening was related to age. No exposures exceeded the relevant standards; we therefore conclude that the current standards do not provide protection against injurious pulmonary effects, at least in this industry. PMID:6691928

  9. Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation

    SciTech Connect

    Pisano, Albert P.

    2013-04-26

    This project utilizes Silicon Carbide (SiC) materials platform to fabricate advanced sensors to be used as high-temperature downhole instrumentation for the DOE’s Geothermal Technologies Program on Enhanced Geothermal Systems. The scope of the proposed research is to 1) develop a SiC pressure sensor that can operate in harsh supercritical conditions, 2) develop a SiC temperature sensor that can operate in harsh supercritical conditions, 3) develop a bonding process for adhering SiC sensor die to well casing couplers, and 4) perform experimental exposure testing of sensor materials and the sensor devices.

  10. The Oxidation of CVD Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynchGiao N.

    1997-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

  11. Synthesis of silicon carbide nanocrystals from waste polytetrafluoroethylene.

    PubMed

    Wang, Liangbiao; Cheng, Qinglin; Qin, Hengfei; Li, Zhongchun; Lou, Zhengsong; Lu, Juanjuan; Zhang, Junhao; Zhou, Quanfa

    2017-02-28

    Resource utilization of waste plastic could solve the problem of environmental pollution and simultaneously relieve energy shortages, achieving sustainable development. In this study, the conversion of waste polytetrafluoroethylene (PTFE) to cubic silicon carbide (SiC) nanoparticles has been described. The structures and morphologies of the obtained SiC were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Furthermore, the FTIR spectrum of the obtained SiC sample suggests that the waste PTFE was completely converted into SiC in our approach.

  12. Thermal Transport Along the Dislocation Line in Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Ni, Yuxiang; Xiong, Shiyun; Volz, Sebastian; Dumitric, Traian

    2014-09-01

    We elucidate thermal conductivity along the screw dislocation line, which represents a transport direction inaccessible to classical theories. By using equilibrium molecular dynamics simulations, we uncover a Burgers vector dependent thermal conductivity reduction in silicon carbide. The effect is uncorrelated with the classical modeling and originates in the highly deformed core region, which represents a significant source of anharmonic phonon-phonon scattering. High strain reduces the phonon relaxation time, especially in the longitudinal acoustic branches, and creates an effective internal thermal resistance around the dislocation axis. Our results have implications for designing materials useful for high-temperature electronics and thermoelectric applications.

  13. Improved Silicon Carbide Crystals Grown From Atomically Flat Surfaces

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2003-01-01

    The NASA Glenn Research Center is demonstrating that atomically flat (i.e., step-free) silicon carbide (SiC) surfaces are ideal for realizing greatly improved wide bandgap semiconductor films with lower crystal defect densities. Further development of these improved films could eventually enable harsh-environment electronics beneficial to jet engine and other aerospace and automotive applications, as well as much more efficient and compact power distribution and control. The technique demonstrated could also improve blue-light lasers and light-emitting-diode displays.

  14. Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors

    NASA Technical Reports Server (NTRS)

    Goodman, William

    2012-01-01

    Honeycomb silicon carbide composite mirrors are made from a carbon fiber preform that is molded into a honeycomb shape using a rigid mold. The carbon fiber honeycomb is densified by using polymer infiltration pyrolysis, or through a reaction with liquid silicon. A chemical vapor deposit, or chemical vapor composite (CVC), process is used to deposit a polishable silicon or silicon carbide cladding on the honeycomb structure. Alternatively, the cladding may be replaced by a freestanding, replicated CVC SiC facesheet that is bonded to the honeycomb. The resulting carbon fiber-reinforced silicon carbide honeycomb structure is a ceramic matrix composite material with high stiffness and mechanical strength, high thermal conductivity, and low CTE (coefficient of thermal expansion). This innovation enables rapid, inexpensive manufacturing. The web thickness of the new material is less than 1 millimeter, and core geometries tailored. These parameters are based on precursor carbon-carbon honeycomb material made and patented by Ultracor. It is estimated at the time of this reporting that the HoneySiC(Trademark) will have a net production cost on the order of $38,000 per square meter. This includes an Ultracor raw material cost of about $97,000 per square meter, and a Trex silicon carbide deposition cost of $27,000 per square meter. Even at double this price, HoneySiC would beat NASA's goal of $100,000 per square meter. Cost savings are estimated to be 40 to 100 times that of current mirror technologies. The organic, rich prepreg material has a density of 56 kilograms per cubic meter. A charred carbon-carbon panel (volatile organics burnt off) has a density of 270 kilograms per cubic meter. Therefore, it is estimated that a HoneySiC panel would have a density of no more than 900 kilograms per cubic meter, which is about half that of beryllium and about onethird the density of bulk silicon carbide. It is also estimated that larger mirrors could be produced in a matter of weeks

  15. [beta]-silicon carbide protective coating and method for fabricating same

    DOEpatents

    Carey, P.G.; Thompson, J.B.

    1994-11-01

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

  16. .beta.-silicon carbide protective coating and method for fabricating same

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.

    1994-01-01

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

  17. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica.

    PubMed

    Luo, Xiaogang; Ma, Wenhui; Zhou, Yang; Liu, Dachun; Yang, Bin; Dai, Yongnian

    2009-11-11

    Silicon carbide nanowires have been synthesized at 1400 degrees C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core-shell structure and grow along <111> direction. The diameter of silicon carbide nanowires is about 50-200 nm and the length from tens to hundreds of micrometers. The vapor-solid mechanism is proposed to elucidate the growth process. The photoluminescence of the synthesized silicon carbide nanowires shows significant blueshifts, which is resulted from the existence of oxygen defects in amorphous layer and the special rough core-shell interface.

  18. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica

    PubMed Central

    2010-01-01

    Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core–shell structure and grow along <111> direction. The diameter of silicon carbide nanowires is about 50–200 nm and the length from tens to hundreds of micrometers. The vapor–solid mechanism is proposed to elucidate the growth process. The photoluminescence of the synthesized silicon carbide nanowires shows significant blueshifts, which is resulted from the existence of oxygen defects in amorphous layer and the special rough core–shell interface. PMID:20651911

  19. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica

    NASA Astrophysics Data System (ADS)

    Luo, Xiaogang; Ma, Wenhui; Zhou, Yang; Liu, Dachun; Yang, Bin; Dai, Yongnian

    2010-11-01

    Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core-shell structure and grow along <111> direction. The diameter of silicon carbide nanowires is about 50-200 nm and the length from tens to hundreds of micrometers. The vapor-solid mechanism is proposed to elucidate the growth process. The photoluminescence of the synthesized silicon carbide nanowires shows significant blueshifts, which is resulted from the existence of oxygen defects in amorphous layer and the special rough core-shell interface.

  20. Epitaxy of silicon carbide on silicon: Micromorphological analysis of growth surface evolution

    NASA Astrophysics Data System (ADS)

    Shikhgasan, Ramazanov; Ştefan, Ţălu; Dinara, Sobola; Sebastian, Stach; Guseyn, Ramazanov

    2015-10-01

    The main purpose of our research was the study of evolution of silicon carbide films on silicon by micromorphological analysis. Surface micromorphologies of Silicon Carbide epilayers with two different thicknesses were compared by means of fractal geometry. Silicon Carbide films were prepared on Si substrates by magnetron sputtering of polycrystalline target SiC in Ar atmosphere (99.999% purity). Synthesis of qualitative SiC/Si templates solves the questions of large diameter SiC single-crystal wafers formation. This technology decreases financial expenditure and provides integration of SiC into silicon technology. These hybrid substrates with buffer layer of high oriented SiC are useful for growth of both wide band gap materials (SiC, AlN, GaN) and graphene. The main problem of SiC heteroepitaxy on Si (1 1 1) is the large difference (∼20%) of the lattice parameters. Fractal analysis of surface morphology of heteroepitaxial films could help to understand the films growth mechanisms. The 3D (three-dimensional) surfaces revealed a fractal structure at the nanometer scale. The fractal dimension (D) provided global quantitative values that characterize the scale properties of surface geometry.

  1. Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.

    2016-04-01

    Methods of linear algebra were used to find a basis of independent chemical reactions in the topochemical conversion of silicon into silicon carbide by the reaction with carbon monoxide. The pressure-flow phase diagram was calculated from this basis, describing the composition of the solid phase for a particular design of vacuum furnace. It was demonstrated that to grow pure silicon carbide, it is necessary to ensure the pressure of carbon monoxide less than a certain value and its flow more than a certain value, depending on the temperature of the process. The elastic fields around vacancies formed were considered for the first time in calculating the topochemical reaction. It was shown that the anisotropy of these fields in a cubic crystal increases the constant of the main reaction approximately fourfold.

  2. Study of porous silicon, silicon carbide and DLC coated field emitters for pressure sensor application

    NASA Astrophysics Data System (ADS)

    Kleps, Irina; Angelescu, Anca; Samfirescu, Narcis; Gil, Adriana; Correia, Antonio

    2001-06-01

    This paper is a revue of our experimental data regarding field emitter array fabrication, various field emission materials and application in pressure sensors domain. Silicon emitter's arrays of different sizes and geometrical shapes were realised using micromachining technologies. Some important aspects as control in etch rate, emitter profile, selectivity and surface morphology were investigated. The emitter surface was modified or was covered by different materials in order to improve the emission properties. The most usual materials investigated for FED applications were: Si, diamond-like carbon layers, silicon carbide, and porous silicon. The main application which is present in our attention is the field emission pressure sensor.

  3. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  4. Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, D.; Liu, C. C.; Wu, Q. H.R

    1995-01-01

    Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

  5. Silicon Carbide Sensors and Electronics for Harsh Environment Applications

    NASA Technical Reports Server (NTRS)

    Evans, Laura J.

    2007-01-01

    Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

  6. Surface wave accelerator based on silicon carbide: theoretical study

    NASA Astrophysics Data System (ADS)

    Kalmykov, S.; Korobkin, D.; Neuner, B.; Shvets, G.

    2009-01-01

    Compact near-field solid-state accelerating structure powered by a carbon dioxide (CO2) laser is considered. The accelerating luminous transverse magnetic mode is excited in a few-micron wide evacuated planar channel between two silicon carbide (SiC) films grown on silicon (Si) wafers. Laser coupling to this mode is accomplished through the properly designed Si gratings. Operating wavelength is dictated by the frequency-dependent dielectric permittivity of SiC and the channel width. The geometric loss factor κ of the accelerating mode is computed. It is found that the unwanted excitation of the guided modes in Si wafers reduces the laser coupling efficiency and increases the fields inside the Si wafer.

  7. Surface wave accelerator based on silicon carbide: theoretical study

    SciTech Connect

    Kalmykov, S.; Korobkin, D.; Neuner, B.; Shvets, G.

    2009-01-22

    Compact near-field solid-state accelerating structure powered by a carbon dioxide (CO{sub 2}) laser is considered. The accelerating luminous transverse magnetic mode is excited in a few-micron wide evacuated planar channel between two silicon carbide (SiC) films grown on silicon (Si) wafers. Laser coupling to this mode is accomplished through the properly designed Si gratings. Operating wavelength is dictated by the frequency-dependent dielectric permittivity of SiC and the channel width. The geometric loss factor {kappa} of the accelerating mode is computed. It is found that the unwanted excitation of the guided modes in Si wafers reduces the laser coupling efficiency and increases the fields inside the Si wafer.

  8. Optical thermometry based on level anticrossing in silicon carbide.

    PubMed

    Anisimov, A N; Simin, D; Soltamov, V A; Lebedev, S P; Baranov, P G; Astakhov, G V; Dyakonov, V

    2016-09-14

    We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz(1/2) for a detection volume of approximately 10(-6) mm(3). In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

  9. Linear integrated optics in 3C silicon carbide.

    PubMed

    Martini, Francesco; Politi, Alberto

    2017-05-15

    The development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching -6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics.

  10. Superconductivity in heavily boron-doped silicon carbide

    PubMed Central

    Kriener, Markus; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru

    2008-01-01

    The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility. PMID:27878022

  11. Electromechanical computing at 500 degrees C with silicon carbide.

    PubMed

    Lee, Te-Hao; Bhunia, Swarup; Mehregany, Mehran

    2010-09-10

    Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300 degrees C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500 degrees C with ultralow leakage current.

  12. Computer Simulation of Displacement Damage in Silicon Carbide

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.; M. Chipara, D. L. Edwards, S. Phillips, and R. Benson

    2005-07-01

    We have performed molecular dynamics simulation of displacement events on silicon and carbon sublattices in silicon carbide for displacement doses ranging from 0.005 to 0.5 displacements per atom. Our results indicate that the displacement threshold energy is about 21 eV for C and 35 eV for Si, and amorphization can occur by accumulation of displacement damage regardless of whether Si or C is displaced. In addition, we have simulated defect production in high-energy cascades as a function of the primary knock-on atom energy and observed features that are different from the case of damage accumulation in Si. These systematic studies shed light on the phenomenon of non-ionizing energy loss that is relevant to understanding space radiation effects in semiconductor devices.

  13. DECODING THE MESSAGE FROM METEORITIC STARDUST SILICON CARBIDE GRAINS

    SciTech Connect

    Lewis, Karen M.; Lugaro, Maria; Gibson, Brad K.; Pilkington, Kate E-mail: karen.michelle.lewis@gmail.com E-mail: kpilkington@uclan.ac.uk

    2013-05-01

    Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analyzed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analyzed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carries the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modeling of dust condensation in stellar winds as a function of the metallicity.

  14. Low voltage nanoelectromechanical switches based on silicon carbide nanowires.

    PubMed

    Feng, X L; Matheny, M H; Zorman, C A; Mehregany, M; Roukes, M L

    2010-08-11

    We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as approximately 20 nm and lateral switching gaps as narrow as approximately 10 nm. Very low switch-on voltages are obtained, from a few volts down to approximately 1 V level. Two-terminal, contact-mode "hot" switching with high on/off ratios (>10(2) or 10(3)) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.

  15. Synthesis of high purity sinterable silicon carbide powder

    SciTech Connect

    Boecker, W.D.; Mehosky, B.L.; Rogers, R.S.C.; Storm, R.S.; Venkateswaran, V. . Structural Ceramics Div.)

    1989-11-01

    High purity, submicron silicon carbide powders were produced via gas phase synthesis using a hydrogen/argon plasma. Two test facilities were constructed, a bench-scale unit and a larger pilot scale reactor. Three candidate silicon sources were evaluated:silicon tetrachloride (SiCl{sub 4}). dimethyldichlorosilane (CH{sub 3}){sub 2}(SiCl{sub 2}) and methyltrichlorosilane (CH{sub 3}SiCl{sub 3}). Product powders were evaluated on the basis of pressureless sinterability, surface area, agglomeration, particle size distribution, phase distribution and chemistry. Three commercial powders, Starck A10, Starck B10, and Carborundum submicron alpha silicon carbide, were also evaluated for comparison to the product powders. Powders were reproducibly synthesized at a rate of one pound per hour for standard run times of five hours. Product powders exhibited chemical and physical properties equal to or exceeding the commercial powders evaluated. In limited attempts to pressureless sinter the product powders, densities of 91% of theoretical were obtained with as-produced powder. Post-processing permitted densities in excess of 97% of theoretical. X-ray diffraction of the product indicates that the product powders are primarily beta poly-types, with traces of alpha present. Increased production rates to a target level of seven pounds per hour were not possible due to current transients produced by the pilot scale power supply. Extensive unsuccessful efforts to reduce or eliminate the transients are described. Low recovered product yields resulted from a failure of a product collection filter that was not discovered until the completion of the project.

  16. Synthesis of silicon carbide films by combined implantation with sputtering techniques

    NASA Astrophysics Data System (ADS)

    Li, Gaobao; Zhang, Jizhong; Meng, Qingli; Li, Wenzhi

    2007-08-01

    Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 × 10 16 ions/cm 2. Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 °C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 °C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively.

  17. Influence of radiation damage on krypton diffusion in silicon carbide

    NASA Astrophysics Data System (ADS)

    Friedland, E.; Hlatshwayo, T. T.; van der Berg, N. G.; Mabena, M. C.

    2015-07-01

    Diffusion of krypton in poly and single crystalline silicon carbide is investigated and compared with the previously obtained results for xenon, which pointed to a different diffusion mechanism than observed for chemically active elements. For this purpose 360 keV krypton ions were implanted in commercial 6H-SiC and CVD-SiC wafers at room temperature, 350 °C and 600 °C. Width broadening of the implantation profiles and krypton retention during isochronal and isothermal annealing up to temperatures of 1400 °C was determined by RBS-analysis, whilst in the case of 6H-SiC damage profiles were simultaneously obtained by α-particle channeling. Little diffusion and no krypton loss was detected in the initially amorphized and eventually recrystallized surface layer of cold implanted 6H-SiC during annealing up to 1200 °C. Above that temperature thermal etching of the implanted surface became increasingly important. No diffusion or krypton loss is detected in the hot implanted 6H-SiC samples during annealing up to 1400 °C. Radiation damage dependent grain boundary diffusion is observed at 1300 °C in CVD-SiC. The results seem to indicate, that the chemically inert noble gas atoms do not form defect-impurity complexes, which strongly influence the diffusion behavior of other diffusors in silicon carbide.

  18. High-strength silicon carbides by hot isostatic pressing

    NASA Technical Reports Server (NTRS)

    Dutta, Sunil

    1988-01-01

    Silicon carbide has strong potential for heat engine hardware and other high-temperature applications because of its low density, good strength, high oxidation resistance, and good high-temperature creep resistance. Hot isostatic pressing (HIP) was used for producing alpha and beta silicon carbide (SiC) bodies with near-theoretical density, ultrafine grain size, and high strength at processing temperatures of 1900 to 2000 C. The HIPed materials exhibited ultrafine grain size. Furthermore, no phase transformation from beta to alpha was observed in HIPed beta-SiC. Both materials exhibited very high average flexural strength. It was also shown that alpha-SiC bodies without any sintering aids, when HIPed to high final density, can exhibit very high strength. Fracture toughness K (sub C) values were determined to be 3.6 to 4.0 MPa m (sup 1/2) for HIPed alpha-SiC and 3.7 to 4.1 MPa m (sup 1/2) for HIPed beta-SiC. In the HIPed specimens strength-controlling flaws were typically surface related. In spite of improvements in material properties such as strength and fracture toughness by elimination of the larger strength-limiting flaws and by grain size refinement, HIPing has no effect on the Weibull modulus.

  19. Development of the SOFIA silicon carbide secondary mirror

    NASA Astrophysics Data System (ADS)

    Fruit, Michel; Antoine, Pascal; Varin, Jean-Luc; Bittner, Hermann; Erdmann, Matthias

    2003-02-01

    The SOFIA telescope is ajoint NASA-DLR project for a 2.5 m airborne Stratospheric Observatory for IR Astronomy to be flown in a specially adapted Boeing 747 SP plane, Kayser-Threde being resopinsible for the development of the Telescope Optics. The φ 352 mm Secondary Mirror is mounted ona chopping mechanism to allow avoidance of background noise during IR observations. Stiffness associated to lightness is a major demand for such a mirror to achieve high frequency chopping. This leads to select SIlicon Carbide for the mirror blank. Its development has been run by the ASTRIUM/BOOSTEC joint venture SiCSPACE, taking full benefit of the instrinsic properties of the BOOSTEC SiC-100 sintered material, associated to qualified processes specifically developed for space borne mirrors by ASTRIUM. Achieved performances include a low mass of 1.97 kg, a very high stiffness with a first resonant frequency of 1865 Hz and a measured optical surface accuracy of 39 nm rms, using Ion Beam Figuring. It is proposed here to present the major design features of the SOFIA Secondary Mirror, highlighting the main advantages of using Silicon Carbide, the main steps of its development and the achieved optomechanical performances of the developed mirror.

  20. Delayed failure in a shock-loaded silicon carbide

    SciTech Connect

    Millett, J.C.F.; Bourne, N.K.; Dandekar, D.P.

    2005-06-01

    The shock response of a silicon carbide has been investigated using the methods of plate impact, and monitored using manganin stress gauges mounted so as to be responsive to lateral stress. Close to the impact face, a two-step stress response is observed, indicating the presence of delayed failure at the impact face. As the shock front moves through the target, the failure wave appears to slow, before arresting between 4 and 6 mm from the impact face. Measured shear stresses (ahead of the failure front) are in good agreement with the calculated elastic response, and with similar measurements made by both ourselves in other grades of silicon carbide and other authors. In gauge traces where the failure wave was not observed, a slight decrease in lateral stress (and thus a corresponding increase in shear strength) has been noticed. A similar response in some metals (in combination with recovery work in other ceramics) has led us to suggest that a degree of plastic deformation, in combination with a more brittle response, has occurred.

  1. Hydrogen adsorption in metal-decorated silicon carbide nanotubes

    NASA Astrophysics Data System (ADS)

    Singh, Ram Sevak; Solanki, Ankit

    2016-09-01

    Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

  2. Oxidation Behavior of Carbon Fiber Reinforced Silicon Carbide Composites

    NASA Technical Reports Server (NTRS)

    Valentin, Victor M.

    1995-01-01

    Carbon fiber reinforced Silicon Carbide (C-SiC) composites offer high strength at high temperatures and good oxidation resistance. However, these composites present some matrix microcracks which allow the path of oxygen to the fiber. The aim of this research was to study the effectiveness of a new Silicon Carbide (SiC) coating developed by DUPONT-LANXIDE to enhance the oxidation resistance of C-SiC composites. A thermogravimetric analysis was used to determine the oxidation rate of the samples at different temperatures and pressures. The Dupont coat proved to be a good protection for the SiC matrix at temperatures lower than 1240 C at low and high pressures. On the other hand, at temperatures above 1340 C the Dupont coat did not seem to give good protection to the composite fiber and matrix. Even though some results of the tests have been discussed, because of time restraints, only a small portion of the desired tests could be completed. Therefore, no major conclusions or results about the effectiveness of the coat are available at this time.

  3. High-strength silicon carbides by hot isostatic pressing

    NASA Technical Reports Server (NTRS)

    Dutta, Sunil

    1989-01-01

    Silicon carbide has strong potential for heat engine hardware and other high-temperature applications because of its low density, good strength, high oxidation resistance, and good high-temperature creep resistance. Hot isostatic pressing (HIP) was used for producing alpha and beta silicon carbide (SiC) bodies with near-theoretical density, ultrafine grain size, and high strength at processing temperatures of 1900 to 2000 C. The HIPed materials exhibited ultrafine grain size. Furthermore, no phase transformation from beta to alpha was observed in HIPed beta-SiC. Both materials exhibited very high average flexural strength. It was also shown that alpha-SiC bodies without any sintering aids, when HIPed to high final density, can exhibit very high strength. Fracture toughness K (sub C) values were determined to be 3.6 to 4.0 MPa m (sup 1/2) for HIPed alpha-SiC and 3.7 to 4.1 MPa m (sup 1/2) for HIPed beta-SiC. In the HIPed specimens strength-controlling flaws were typically surface related. In spite of improvements in material properties such as strength and fracture toughness by elimination of the larger strength-limiting flaws and by grain size refinement, HIPing has no effect on the Weibull modulus.

  4. High-strength silicon carbides by hot isostatic pressing

    NASA Technical Reports Server (NTRS)

    Dutta, Sunil

    1989-01-01

    Silicon carbide has strong potential for heat engine hardware and other high-temperature applications because of its low density, good strength, high oxidation resistance, and good high-temperature creep resistance. Hot isostatic pressing (HIP) was used for producing alpha and beta silicon carbide (SiC) bodies with near-theoretical density, ultrafine grain size, and high strength at processing temperatures of 1900 to 2000 C. The HIPed materials exhibited ultrafine grain size. Furthermore, no phase transformation from beta to alpha was observed in HIPed beta-SiC. Both materials exhibited very high average flexural strength. It was also shown that alpha-SiC bodies without any sintering aids, when HIPed to high final density, can exhibit very high strength. Fracture toughness K (sub C) values were determined to be 3.6 to 4.0 MPa m (sup 1/2) for HIPed alpha-SiC and 3.7 to 4.1 MPa m (sup 1/2) for HIPed beta-SiC. In the HIPed specimens strength-controlling flaws were typically surface related. In spite of improvements in material properties such as strength and fracture toughness by elimination of the larger strength-limiting flaws and by grain size refinement, HIPing has no effect on the Weibull modulus.

  5. Microwave processing of silicon carbide. CRADA final report

    SciTech Connect

    Kimrey, H.D.; Kiggans, J.O.; Ness, E.A.; Rafaniello, W.

    1998-02-01

    A Cooperative Research and Development Agreement (CRADA) between Lockheed Martin Energy Systems, Inc. (LMES) and Dow Chemical Company was initiated on May 3, 1993. (Lockheed Martin Energy Research Inc. (LMER) replaced LMES). The completion date for the Agreement was December 1996. The purpose of this project is to develop microwave processing techniques to produce superior silicon carbide. Sintered silicon carbide is an attractive material for use in high-stress, high-temperature, high-wear, or highly corrosive applications. However, use in these applications has been hampered by a lack of consistency in strength, density, and other physical properties. It is proposed that the enhanced sintering that has been achieved using microwaves in oxide and halide systems be applied to the sintering of these materials to produce a more highly controlled density and microstructure. This will, in turn, increase the strength and Weibull modulus of the sintered body. The use of microwave energy to anneal for a moderate temperature (1,400--1,600 C) anneal in a high vacuum (< 10{sup {minus}4} Torr) results in an improvement in the sintered density and density distribution. These changes in turn result in improved properties of the sintered compacts. Further, scale up of the process has resulted in the routine production of 3 kg components in excess of 4 cm in thickness.

  6. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

  7. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  8. Genesis Silicon Carbide Concentrator Target 60003 Preliminary Ellipsometry Mapping Results

    NASA Technical Reports Server (NTRS)

    Calaway, M. J.; Rodriquez, M. C.; Stansbery, E. K.

    2007-01-01

    The Genesis concentrator was custom designed to focus solar wind ions primarily for terrestrial isotopic analysis of O-17/O-16 and O-18/O-16 to +/-1%, N-15/N-14 to +/-1%, and secondarily to conduct elemental and isotopic analysis of Li, Be, and B. The circular 6.2 cm diameter concentrator target holder was comprised of four quadrants of highly pure semiconductor materials that included one amorphous diamond-like carbon, one C-13 diamond, and two silicon carbide (SiC). The amorphous diamond-like carbon quadrant was fractured upon impact at Utah Test and Training Range (UTTR), but the remaining three quadrants survived fully intact and all four quadrants hold an important collection of solar wind. The quadrants were removed from the target holder at NASA Johnso n Space Center Genesis Curation Laboratory in April 2005, and have been housed in stainless steel containers under continual nitrogen purge since time of disintegration. In preparation for allocation of a silicon carbide target for oxygen isotope analyses at UCLA, the two SiC targets were photographed for preliminary inspection of macro particle contamination from the hard non-nominal landing as well as characterized by spectroscopic ellipsometry to evaluate thin film contamination. This report is focused on Genesis SiC target sample number 60003.

  9. Cavity-Enhanced Measurements of Defect Spins in Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Calusine, Greg; Politi, Alberto; Awschalom, David D.

    2016-07-01

    The identification of new solid-state defect-qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here, we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color-center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic-resonance signal intensities, and optical spin initialization rates. We observe an up to a factor of 30 increase in the photoluminescence and optically detected magnetic-resonance signals from Ky5 color centers excited by cavity-resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of 2. Furthermore, we show that the 705-fold reduction in excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to overcome inhomogenous broadening in order to facilitate the study of defect-qubit subensemble properties. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color-center defect qubits to enable applications in quantum information and sensing.

  10. Development of refractory armored silicon carbide by infrared transient liquid phase processing

    NASA Astrophysics Data System (ADS)

    Hinoki, Tatsuya; Snead, Lance L.; Blue, Craig A.

    2005-12-01

    Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m 2 in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m 2 made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.

  11. Structural evolution of zirconium carbide under ion irradiation

    NASA Astrophysics Data System (ADS)

    Gosset, D.; Dollé, M.; Simeone, D.; Baldinozzi, G.; Thomé, L.

    2008-02-01

    Zirconium carbide is one of the candidate materials to be used for some fuel components of the high temperature nuclear reactors planned in the frame of the Gen-IV project. Few data exist regarding its behaviour under irradiation. We have irradiated ZrC samples at room temperature with slow heavy ions (4 MeV Au, fluence from 10 11 to 5 × 10 15 cm -2) in order to simulate neutron irradiations. Grazing incidence X-Ray diffraction (GIXRD) and transmission electron microscopy (TEM) analysis have been performed in order to study the microstructural evolution of the material versus ion fluence. A high sensitivity to oxidation is observed with the formation of zirconia precipitates during the ion irradiations. Three damage stages are observed. At low fluence (<10 12 cm -2), low modifications are observed. At intermediate fluence, high micro-strains appear together with small faulted dislocation loops. At the highest fluence (>10 14 cm -2), the micro-strains saturate and the loops coalesce to form a dense dislocation network. No other structural modification is observed. The material shows a moderate cell parameter increase, corresponding to a 0.6 vol.% swelling, which saturates around 10 14 ions/cm 2, i.e., a few Zr dpa. As a result, in spite of a strong covalent bonding component, ZrC seems to have a behaviour under irradiation close to cubic metals.

  12. Spin states of the silicon vacancy in silicon carbide

    NASA Astrophysics Data System (ADS)

    Bockstedte, Michel; Schuetz, Felix

    2015-03-01

    SiC as a semi conductor fulfills all necessary requirements1 for implementing qubits via defect electron spins, such as the silicon vacancy, the di-vacancy or a complex of a silicon vacancy and a nitrogen impurity. The spin-selective fluorescence in contrast to the prototypical NV-center in diamond operates in the spectral range favorable for telecom applications.Spin-manipulation of the intrinsic centers was demonstrated even at room temperature.2,3 For the silicon vacancy in SiC inter system crossings (ISCs) from high to yet unknown low spin states govern the spin-relaxation. By DFT and a DFT-based multi-reference Hamiltonian we analyze the spin physics of the defect. In 4H SiC distinct luminescence lines are obtained for the inequivalent defect sites in agreement with experiment. Our result thus establishes an assignment of the lines to the sites. Owing to the spin (S=3/2) and a stronger electron-phonon coupling in the excited state, we find ISCs distinct from the NV-center.

  13. Applications of Silicon Carbide for High Temperature Electronics and Sensors

    NASA Technical Reports Server (NTRS)

    Shields, Virgil B.

    1995-01-01

    Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

  14. Development of a model of silicon carbide thermodestruction for preparation of graphite layers

    NASA Astrophysics Data System (ADS)

    Davydov, S. Yu.; Lebedev, A. A.; Smirnova, N. Yu.

    2009-03-01

    A three-stage scheme of the silicon carbide thermodestruction resulting in surface graphitization, which was proposed earlier (based on structural studies), is discussed. A theoretical analysis shows, however, that this process occurs in two stages, namely, thermodesorption of silicon atoms from the two outer Si-C bilayers followed by condensation of carbon atoms on the Si(0001) face of silicon carbide, thus giving rise to the formation of a two-dimensional graphite structure (graphene).

  15. Size Dependence of Nanoscale Wear of Silicon Carbide.

    PubMed

    Tangpatjaroen, Chaiyapat; Grierson, David; Shannon, Steve; Jakes, Joseph E; Szlufarska, Izabela

    2017-01-18

    Nanoscale, single-asperity wear of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native oxide layers. We discovered a transition in the relative wear resistance of the SiC samples compared to that of Si as a function of contact size. With larger nanoindenter tips (tip radius ≈ 370 nm), the wear resistances of both sc-SiC and nc-SiC are higher than that of Si. This result is expected from the Archard's equation because SiC is harder than Si. However, with the smaller AFM tips (tip radius ≈ 20 nm), the wear resistances of sc-SiC and nc-SiC are lower than that of Si, despite the fact that the contact pressures are comparable to those applied with the nanoindenter tips, and the plastic zones are well-developed in both sets of wear experiments. We attribute the decrease in the relative wear resistance of SiC compared to that of Si to a transition from a wear regime dominated by the materials' resistance to plastic deformation (i.e., hardness) to a regime dominated by the materials' resistance to interfacial shear. This conclusion is supported by our AFM studies of wearless friction, which reveal that the interfacial shear strength of SiC is higher than that of Si. The contributions of surface roughness and surface chemistry to differences in interfacial shear strength are also discussed.

  16. Stability and rheology of dispersions of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1987-01-01

    The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

  17. Molecular dynamics simulations of nanoindentation and nanoscratching of silicon carbide

    NASA Astrophysics Data System (ADS)

    Noreyan, Alisa A.

    Parallel molecular dynamics simulations were carried out to investigate the interaction between a diamond indenter and silicon carbide during nanoindentation and nanoscratching. The dependence of the critical depth and pressure for the elastic-to-plastic transition on indentation velocity, tip size, and workpiece temperature was studied along with the nature of the deformation due to indentation and scratching. The two most widely used polytypes---cubic silicon carbide (3C-SiC) and hexagonal silicon carbide (6H-SiC)---were considered while the Si-terminated (001) ((0001)) surface was used in each case. Simulations were implemented using the Tersoff SiC potential, which accurately reproduces the lattice and elastic constants of 3C-SiC and 6H-SiC. Nanoindentation experiments were also carried out for 6H-SiC. For the 3C polytype, both the critical pressure and indentation depth for the elastic-to-plastic transition were found to decrease with increasing indenter size over the nanoscale range of indenter sizes used in our simulations. As a result, the measured hardness was found to be significantly higher than obtained experimentally for significantly larger indenter sizes. In addition, for indentation depths beyond the critical depth a phase transition to the rocksalt structure was observed. A similar phase transition was observed for the 6H polytype, but the transition pressure was found to be somewhat higher than for 3C-SiC. Both of these results are in good agreement with experimental results for bulk SiC. Thus, for nanoscale indentation of 3C and 6H-SiC, the onset of plastic behavior is related to the existence of a phase transition under the indenter tip. For the 6H case a weak dependence on indentation velocity was also observed. This claim was also confirmed by nanoindentation experiments, in which the strain rate sensitivity of mono-crystal 6H was investigated. Simulations of the nanoscratching of 3C-SiC were also carried out. Significant anisotropy in the

  18. Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

    SciTech Connect

    Kole, Arindam; Chaudhuri, Partha

    2014-10-15

    A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the μc-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

  19. Effect of oxygen and nitrogen interactions on friction of single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Friction studies were conducted with single-crystal silicon carbide contacting silicon carbide and titanium after having been exposed to oxygen and nitrogen in various forms. After they had been sputter cleaned, the surfaces were (1) exposed to gaseous oxygen and nitrogen (adsorption), (2) ion bombarded with oxygen and nitrogen, or (3) reacted with oxygen (SiC only). Auger emission spectroscopy was used to determine the presence of oxygen and nitrogen. The results indicate that the surfaces of silicon carbide with reacted and ion-bombarded oxygen ions give higher coefficients of friction than do argon sputter-cleaned surfaces. The effects of oxygen on friction may be related to the relative chemical, thermodynamic properties of silicon, carbon, and titanium for oxygen. The adsorbed films of oxygen, nitrogen, and mixed gases of oxygen and nitrogen on sputter-cleaned, oxygen-ion bombarded, and oxygen-reacted surfaces generally reduce friction. Adsorption to silicon carbide is relatively weak.

  20. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

    NASA Technical Reports Server (NTRS)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

    2016-01-01

    Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

  1. Reaction-Based SiC Materials for Joining Silicon Carbide Composites for Fusion Energy

    SciTech Connect

    Lewinsohn, Charles A.; Jones, Russell H.; Singh, M.; Serizawa, H.; Katoh, Y.; Kohyama, A.

    2000-09-01

    The fabrication of large or complex silicon carbide-fiber-reinforced silicon carbide (SiC/SiC) components for fusion energy systems requires a method to assemble smaller components that are limited in size by manufacturing constraints. Previous analysis indicates that silicon carbide should be considered as candidate joint materials. Two methods to obtain SiC joints rely on a reaction between silicon and carbon to produce silicon carbide. This report summarizes preliminary mechanical properties of joints formed by these two methods. The methods appear to provide similar mechanical properties. Both the test methods and materials are preliminary in design and require further optimization. In an effort to determine how the mechanical test data is influenced by the test methodology and specimen size, plans for detailed finite element modeling (FEM) are presented.

  2. Characterization of SiC (SCS-6) Fiber Reinforced Reaction-Formed Silicon Carbide Matrix Composites

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay; Dickerson, Robert M.

    1995-01-01

    Silicon carbide (SCS-6) fiber reinforced-reaction formed silicon carbide matrix composites were fabricated using NASA's reaction forming process. Silicon-2 at a percent of niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bi-modal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon and silicon. Fiber push-out tests on these composites determined a debond stress of approx. 67 MPa and a frictional stress of approx. 60 MPa. A typical four point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pull out.

  3. Characterization of SiC Fiber (SCS-6) Reinforced-Reaction-Formed Silicon Carbide Matrix Composites

    NASA Technical Reports Server (NTRS)

    Singh, M.; Dickerson, R. M.

    1996-01-01

    Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.

  4. Characterization of luminescent silicon carbide nanocrystals prepared by reactive bonding and subsequent wet chemical etching

    NASA Astrophysics Data System (ADS)

    Beke, David; Szekrényes, Zsolt; Balogh, István; Veres, Miklós; Fazakas, Éva; Varga, Lajos K.; Kamarás, Katalin; Czigány, Zsolt; Gali, Adam

    2011-11-01

    Fabrication of nanosized silicon carbide crystals is a crucial aspect for many biomedical applications. Here, we report an effective fabrication method of silicon carbide nanocrystals based on the reactive bonding method followed by electroless wet chemical etching. Our samples show strong violet-blue emission in the 410-450 nm region depending on the used solvents. Raman and infrared measurements unraveled the surface bonding structure of the fabricated nanoparticles being different from silicon carbide microcrystals. This might give an opportunity to use standard chemistry methods for biological functionalization of such nanoparticles.

  5. A New Approach to Joining of Silicon Carbide-Based Materials for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay

    1998-01-01

    Ceramic joining is recognized as one of the enabling technologies for the application of silicon carbide-based materials in a number of high temperature applications. An affordable, robust technique for the joining of silicon carbide-based ceramics has been developed. This technique is capable of producing joints with tailorable thickness and composition. Microstructure and mechanical properties of reaction formed joints in a reaction bonded silicon carbide have been reported. These joints maintain their mechanical strengths at high temperatures (up to 1350 C) in air. This technique is capable of joining large and complex shaped ceramic components.

  6. Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

    NASA Technical Reports Server (NTRS)

    DeAnna, Russell G.

    1998-01-01

    A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

  7. Silicon Carbide Diodes Performance Characterization at High Temperatures

    NASA Technical Reports Server (NTRS)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

    2004-01-01

    NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

  8. Silicon Carbide Diodes Performance Characterization at High Temperatures

    NASA Technical Reports Server (NTRS)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

    2004-01-01

    NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

  9. Low Cost Fabrication of Silicon Carbide Based Ceramics and Fiber Reinforced Composites

    NASA Technical Reports Server (NTRS)

    Singh, M.; Levine, S. R.

    1995-01-01

    A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC's) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

  10. An evaluation system for experimental silicon and silicon carbide super gate turn off thyristors

    NASA Astrophysics Data System (ADS)

    Bayne, Stephen; Lacouture, Shelby; Lawson, Kevin; Giesselmann, Michael; Scozzie, Charles J.; O'Brien, Heather; Ogunniyi, Aderinto A.

    2014-07-01

    This paper describes the design and implementation of a small-scale pulsed power system specifically intended to evaluate the suitability of experimental silicon and silicon carbide high power Super Gate Turn Off thyristors for high action (500 A2 s and above) pulsed power applications where energy is extracted from a storage element in a rapid and controlled manner. To this end, six of each type of device was placed in a controlled three phase rectifier circuit which was in turn connected to an aircraft ground power motor-generator set and subjected to testing protocols with varying power levels, while parameters such as offset firing angle were varied.

  11. Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

    NASA Technical Reports Server (NTRS)

    Kuramoto, N.; Takiguchi, H.

    1984-01-01

    The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

  12. Silicon carbide, a semiconductor for space power electronics

    SciTech Connect

    Powell, J.A.; Matus, L.G. )

    1991-01-10

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), {ital in} {ital situ} doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p--n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  13. Silicon carbide: a versatile material for biosensor applications.

    PubMed

    Oliveros, Alexandra; Guiseppi-Elie, Anthony; Saddow, Stephen E

    2013-04-01

    Silicon carbide (SiC) has been around for more than 100 years as an industrial material and has found wide and varied applications because of its unique electrical and thermal properties. In recent years there has been increased attention to SiC as a viable material for biomedical applications. Of particular interest in this review is its potential for application as a biotransducer in biosensors. Among these applications are those where SiC is used as a substrate material, taking advantage of its surface chemical, tribological and electrical properties. In addition, its potential for integration as system on a chip and those applications where SiC is used as an active material make it a suitable substrate for micro-device fabrication. This review highlights the critical properties of SiC for application as a biosensor and reviews recent work reported on using SiC as an active or passive material in biotransducers and biosensors.

  14. High surface area silicon carbide-coated carbon aerogel

    DOEpatents

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  15. Method of Assembling a Silicon Carbide High Temperature Anemometer

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor); Fralick, Gustave C. (Inventor); Saad, George J. (Inventor)

    2004-01-01

    A high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bondpads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.

  16. Cryogenic Performance of a Lightweight Silicon Carbide Mirror

    NASA Technical Reports Server (NTRS)

    Eng, Ron; Carpenter, James; Haight, Harlan; Hogue, William; Kegley, Jeff; Stahl, H. Philip; Wright, Ernie; Kane, Dave; Hadaway, James

    2005-01-01

    Low cost, high performance lightweight Silicon Carbide (SiC) mirrors provide an alternative to Beryllium mirrors. A Trex Enterprises 0.25m diameter lightweight SiC mirror using its patented Chemical Vapor Composites (CVC) technology was evaluated for its optical performance. CVC SiC is chemically pure, thermally stable, and mechanically stiff. CVC technology yields higher growth rate than that of CVD SiC. NASA has funded lightweight optical materials technology development efforts involving SiC mirrors for future space based telescope programs. As part of these efforts, a Trex SiC was measured interferometrically from room temperature to 30 degrees Kelvin. This paper will discuss the test goals, the test instrumentation, test results, and lessons learned.

  17. Silicon carbide, a semiconductor for space power electronics

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  18. Silicon carbide, a semiconductor for space power electronics

    NASA Technical Reports Server (NTRS)

    Powell, J. A.; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  19. Joining and Integration of Silicon Carbide for Turbine Engine Applications

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay; Coddington, Bryan; Asthana, Rajiv

    2010-01-01

    The critical need for ceramic joining and integration technologies is becoming better appreciated as the maturity level increases for turbine engine components fabricated from ceramic and ceramic matrix composite materials. Ceramic components offer higher operating temperatures and reduced cooling requirements. This translates into higher efficiencies and lower emissions. For fabricating complex shapes, diffusion bonding of silicon carbide (SiC) to SiC is being developed. For the integration of ceramic parts to the surrounding metallic engine system, brazing of SiC to metals is being developed. Overcoming the chemical, thermal, and mechanical incompatibilities between dissimilar materials is very challenging. This presentation will discuss the types of ceramic components being developed by researchers and industry and the benefits of using ceramic components. Also, the development of strong, crack-free, stable bonds will be discussed. The challenges and progress in developing joining and integration approaches for a specific application, i.e. a SiC injector, will be presented.

  20. Method of producing novel silicon carbide articles. [Patent application

    DOEpatents

    Milewski, J.V.

    1982-06-18

    A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

  1. Joining of Silicon Carbide Through the Diffusion Bonding Approach

    NASA Technical Reports Server (NTRS)

    Halbig, Michael .; Singh, Mrityunjay

    2009-01-01

    In order for ceramics to be fully utilized as components for high-temperature and structural applications, joining and integration methods are needed. Such methods will allow for the fabrication the complex shapes and also allow for insertion of the ceramic component into a system that may have different adjacent materials. Monolithic silicon carbide (SiC) is a ceramic material of focus due to its high temperature strength and stability. Titanium foils were used as an interlayer to form diffusion bonds between chemical vapor deposited (CVD) SiC ceramics with the aid of hot pressing. The influence of such variables as interlayer thickness and processing time were investigated to see which conditions contributed to bonds that were well adhered and crack free. Optical microscopy, scanning electron microscopy, and electron microprobe analysis were used to characterize the bonds and to identify the reaction formed phases.

  2. Cryogenic performance of a lightweight silicon carbide mirror

    NASA Astrophysics Data System (ADS)

    Eng, Ron; Carpenter, James R.; Foss, Colby A., Jr.; Hadaway, James B.; Haight, Harlan J.; Hogue, William D.; Kane, David; Kegley, Jeffrey R.; Stahl, H. Philip; Wright, Ernest R.

    2005-08-01

    Low cost, high performance lightweight Silicon Carbide (SiC) mirrors provide an alternative to Beryllium mirrors. A Trex Enterprises 0.25m diameter low areal density SiC mirror using its patented Chemical Vapor Composites (CVC) technology was evaluated for its optical performance at cryogenic temperature. CVC SiC is chemically pure, thermally stable, and mechanically stiff. CVC technology yields higher growth rate than that of CVD SiC. NASA has funded lightweight optical materials technology development efforts for future space based telescope programs. As part of these efforts, a Trex SiC mirror was measured interferometrically from room temperature to 30 degrees Kelvin. This paper will discuss the test goals, the cryogenic optical testing infrastructure and instrumentation at MSFC, test results, and lessons learned.

  3. Pulmonary impairment in workers exposed to silicon carbide.

    PubMed Central

    Marcer, G; Bernardi, G; Bartolucci, G B; Mastrangelo, G; Belluco, U; Camposampiero, A; Saia, B

    1992-01-01

    Two hundred and sixty seven workers employed in the manufacture of silicon carbide (SiC) were examined to determine the effects of exposure to contaminants (SiC, quartz, and SO2) in the workplace on pulmonary function. No exposure concentrations exceeded the current permissible limits. Ten subjects (3.7%) showed rounded opacities (profusion greater than or equal to 1/0). Two subjects employed only in the final stages of the production process and not exposed to crystalline silica showed opacities (profusion q1/0 and q2/1) on x ray film suggesting a role of SiC in the genesis of interstitial lung disease. Chest abnormalities on x ray film were correlated with cumulative exposure to dust and pulmonary function was affected by cumulative dust exposure, profusion of opacities, and smoking. It is concluded that the current standards do not provide adequate protection against pneumoconiosis and chronic pulmonary disease in this industry. PMID:1637708

  4. Cryogenic Performance of a Lightweight Silicon Carbide Mirror

    NASA Technical Reports Server (NTRS)

    Eng, Ron; Carpenter, James; Haight, Harlan; Hogue, William; Kegley, Jeff; Stahl, H. Philip; Wright, Ernie; Kane, Dave; Hadaway, James

    2005-01-01

    Low cost, high performance lightweight Silicon Carbide (SiC) mirrors provide an alternative to Beryllium mirrors. A Trex Enterprises 0.25m diameter lightweight SiC mirror using its patented Chemical Vapor Composites (CVC) technology was evaluated for its optical performance. CVC SiC is chemically pure, thermally stable, and mechanically stiff. CVC technology yields higher growth rate than that of CVD SiC. NASA has funded lightweight optical materials technology development efforts involving SiC mirrors for future space based telescope programs. As part of these efforts, a Trex SiC was measured interferometrically from room temperature to 30 degrees Kelvin. This paper will discuss the test goals, the test instrumentation, test results, and lessons learned.

  5. Body of Knowledge for Silicon Carbide Power Electronics

    NASA Technical Reports Server (NTRS)

    Boomer, Kristen; Lauenstein, Jean-Marie; Hammoud, Ahmad

    2016-01-01

    Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

  6. Method of Assembling a Silicon Carbide High Temperature Anemometer

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor); Fralick, Gustave C. (Inventor); Saad, George J. (Inventor)

    2004-01-01

    A high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bondpads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.

  7. Development of silicon carbide semiconductor devices for high temperature applications

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

    1991-01-01

    The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

  8. Silicon carbide detector for laser-generated plasma radiation

    NASA Astrophysics Data System (ADS)

    Bertuccio, Giuseppe; Puglisi, Donatella; Torrisi, Lorenzo; Lanzieri, Claudio

    2013-05-01

    We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emitted by laser generated plasmas. The detector has been employed in time of flight (TOF) configuration within an experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm2 area 100 nm thick circular Nisbnd SiC Schottky junction on a high purity 4Hsbnd SiC epitaxial layer 115 μm thick. Current signals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds has been experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC bias under extreme operating conditions with no observable performance degradation.

  9. A review on single photon sources in silicon carbide.

    PubMed

    Lohrmann, A; Johnson, B C; McCallum, J C; Castelletto, S

    2017-03-01

    This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

  10. Dispersion of nonresonant third-order nonlinearities in Silicon Carbide.

    PubMed

    De Leonardis, Francesco; Soref, Richard A; Passaro, Vittorio M N

    2017-01-18

    In this paper we present a physical discussion of the indirect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure. Phonon-electron interaction is analyzed by finding the phonon features involved in the process as depending upon the crystal symmetry. Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in order to give a mathematical formulation to predict the wavelength dispersion of TPA and the Kerr nonlinear refractive index n2. The TPA spectrum is investigated including the effects of band nonparabolicity and the influence of the continuum exciton. Moreover, a parametric analysis is presented in order to fit the experimental measurements. Finally, we have estimated the n2 in a large wavelength range spanning the visible to the mid-IR region.

  11. Dispersion of nonresonant third-order nonlinearities in Silicon Carbide

    NASA Astrophysics Data System (ADS)

    de Leonardis, Francesco; Soref, Richard A.; Passaro, Vittorio M. N.

    2017-01-01

    In this paper we present a physical discussion of the indirect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure. Phonon-electron interaction is analyzed by finding the phonon features involved in the process as depending upon the crystal symmetry. Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in order to give a mathematical formulation to predict the wavelength dispersion of TPA and the Kerr nonlinear refractive index n2. The TPA spectrum is investigated including the effects of band nonparabolicity and the influence of the continuum exciton. Moreover, a parametric analysis is presented in order to fit the experimental measurements. Finally, we have estimated the n2 in a large wavelength range spanning the visible to the mid-IR region.

  12. Optical limiting effects in nanostructured silicon carbide thin films

    SciTech Connect

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu; Semenov, A V

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at λ = 532 nm (I{sub cl} ∼ 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at λ = 1064 nm (I{sub cl} ∼ 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  13. A review on single photon sources in silicon carbide

    NASA Astrophysics Data System (ADS)

    Lohrmann, A.; Johnson, B. C.; McCallum, J. C.; Castelletto, S.

    2017-03-01

    This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

  14. Dispersion of nonresonant third-order nonlinearities in Silicon Carbide

    PubMed Central

    De Leonardis, Francesco; Soref, Richard A.; Passaro, Vittorio M. N.

    2017-01-01

    In this paper we present a physical discussion of the indirect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure. Phonon-electron interaction is analyzed by finding the phonon features involved in the process as depending upon the crystal symmetry. Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in order to give a mathematical formulation to predict the wavelength dispersion of TPA and the Kerr nonlinear refractive index n2. The TPA spectrum is investigated including the effects of band nonparabolicity and the influence of the continuum exciton. Moreover, a parametric analysis is presented in order to fit the experimental measurements. Finally, we have estimated the n2 in a large wavelength range spanning the visible to the mid-IR region. PMID:28098223

  15. Expanding the versatility of silicon carbide thin films and nanowires

    NASA Astrophysics Data System (ADS)

    Luna, Lunet

    Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. However to fully realize SiC in such technologies, the reliability of metal contacts to SiC at high temperatures must be improved and the nanowire growth mechanism must be understood to enable strict control of nanowire crystal structure and orientation. Here, we present a novel metallization scheme, utilizing solid-state graphitization of SiC, to improve the long-term reliability of Pt/Ti contacts to polycrystalline n-type SiC films at high temperature. The metallization scheme includes an alumina protection layer and exhibits low, stable contact resistivity even after long-term (500 hr) testing in air at 450 ºC. We also report the crystal structure and growth mechanism of Ni-assisted silicon carbide nanowires using single-source precursor, methyltrichlorosilane. The effects of growth parameters, such as substrate and temperature, on the structure and morphology of the resulting nanowires will also be presented. Overall, this study provides new insights towards the realization of novel SiC technologies, enabled by advanced electron microscopy techniques located in the user facilities at the Molecular Foundry in Berkeley, California. This work was performed in part at the Molecular Foundry, supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  16. The current understanding on the diamond machining of silicon carbide

    NASA Astrophysics Data System (ADS)

    Goel, Saurav

    2014-06-01

    The Glenn Research Centre of NASA, USA (www.grc.nasa.gov/WWW/SiC/, silicon carbide electronics) is in pursuit of realizing bulk manufacturing of silicon carbide (SiC), specifically by mechanical means. Single point diamond turning (SPDT) technology which employs diamond (the hardest naturally-occurring material realized to date) as a cutting tool to cut a workpiece is a highly productive manufacturing process. However, machining SiC using SPDT is a complex process and, while several experimental and analytical studies presented to date aid in the understanding of several critical processes of machining SiC, the current knowledge on the ductile behaviour of SiC is still sparse. This is due to a number of simultaneously occurring physical phenomena that may take place on multiple length and time scales. For example, nucleation of dislocation can take place at small inclusions that are of a few atoms in size and once nucleated, the interaction of these nucleations can manifest stresses on the micrometre length scales. The understanding of how these stresses manifest during fracture in the brittle range, or dislocations/phase transformations in the ductile range, is crucial to understanding the brittle-ductile transition in SiC. Furthermore, there is a need to incorporate an appropriate simulation-based approach in the manufacturing research on SiC, owing primarily to the number of uncertainties in the current experimental research that includes wear of the cutting tool, poor controllability of the nano-regime machining scale (effective thickness of cut), and coolant effects (interfacial phenomena between the tool, workpiece/chip and coolant), etc. In this review, these two problems are combined together to posit an improved understanding on the current theoretical knowledge on the SPDT of SiC obtained from molecular dynamics simulation.

  17. The 11 micron Silicon Carbide Feature in Carbon Star Shells

    NASA Technical Reports Server (NTRS)

    Speck, A. K.; Barlow, M. J.; Skinner, C. J.

    1996-01-01

    Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

  18. The 11 micron Silicon Carbide Feature in Carbon Star Shells

    NASA Technical Reports Server (NTRS)

    Speck, A. K.; Barlow, M. J.; Skinner, C. J.

    1996-01-01

    Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

  19. An environment-dependent interatomic potential for silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures.

    PubMed

    Lucas, G; Bertolus, M; Pizzagalli, L

    2010-01-27

    An interatomic potential has been developed to describe interactions in silicon, carbon and silicon carbide, based on the environment-dependent interatomic potential (EDIP) (Bazant et al 1997 Phys. Rev. B 56 8542). The functional form of the original EDIP has been generalized and two sets of parameters have been proposed. Tests with these two potentials have been performed for many properties of SiC, including bulk properties, high-pressure phases, point and extended defects, and amorphous structures. One parameter set allows us to keep the original EDIP formulation for silicon, and is shown to be well suited for modelling irradiation-induced effects in silicon carbide, with a very good description of point defects and of the disordered phase. The other set, including a new parametrization for silicon, has been shown to be efficient for modelling point and extended defects, as well as high-pressure phases.

  20. Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

    NASA Technical Reports Server (NTRS)

    1996-01-01

    The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality

  1. Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide

    NASA Astrophysics Data System (ADS)

    Kitaev, Yu. E.; Kukushkin, S. A.; Osipov, A. V.

    2017-01-01

    A symmetry analysis of the crystal structure and the phonon spectrum during continuous topochemical conversion of silicon into silicon carbide has been carried out. The transformation of the symmetry of phonons at high-symmetry points of the Brillouin zone upon the transition from the initial cubic structure of silicon (diamond) through an intermediate cubic structure of silicon carbide to the trigonal structure of SiC has been determined. The selection rules for the infrared and Raman spectra of all the three phases under investigation have been established.

  2. Schottky and ohmic contacts to silicon carbide with device applications

    NASA Astrophysics Data System (ADS)

    Luckowski, Eric David

    Fabrication and electrical characterization of Schottky and ohmic contacts to silicon carbide (SiC) are examined in this work. Silicon carbide exhibits improved performance over silicon in high power, high frequency, high temperature, and radiation intensive applications. Unlike silicon, however, the quality of commercially available SiC has improved dramatically in the last decade. Therefore, initial analysis identifies a wide range of electrical behavior in Schottky diodes. The Schottky barrier height was measured using four distinct techniques: the standard thermionic emission I-V method the Norde plot method, the activation energy method, and from the temperature dependence of reverse characteristics. Thermionic emission theory predicts reverse leakage currents that are incommensurate with measured values at room temperature, but in closer agreement at higher temperatures. The technique of plotting the ideality factor as a function of forward voltage (ideality profiling) is used to identify possible current mechanisms responsible for the range of behavior in the electrical characteristics. Non-ideal behavior could be identified in the ideality proNe by the presence of peaks, which became dimini hed at increasing temperatures, indicating that non-thermionic conduction dominates reverse leakage currents at room temperature. These peaks were also observed ta diminish by Ar implantation of material surrounding the contacts. This method of implantation is also employed in a study of the thermal stability of the Ni-SiC contact. Reverse leakage current, Schottky barrier height and physical stability were examined for long-term anneals at 300sp° C. Electrical behavior of ideal contacts and physical analysis demonstrate good stability for 9000 hours of thermal stressing. Argon implantation appears to improve the reliability of this contact. Ohmic contacts on n-type SiC were produced using nickel silicide, with both Ni and nichrome as starting materials. Test structures

  3. Silicon Carbide Temperature Monitor Measurements at the High Temperature Test Laboratory

    SciTech Connect

    J. L. Rempe; K. G. Condie; D. L. Knudson; L. L. Snead

    2010-01-01

    Silicon carbide (SiC) temperature monitors are now available for use as temperature sensors in Advanced Test Reactor (ATR) irradiation test capsules. Melt wires or paint spots, which are typically used as temperature sensors in ATR static capsules, are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that may have occurred during irradiation. As part of the efforts initiated by the ATR National Scientific User Facility (NSUF) to make SiC temperature monitors available, a capability was developed to complete post-irradiation evaluations of these monitors. As discussed in this report, the Idaho National Laboratory (INL) selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. This document describes the INL efforts to develop the capability to complete these resistance measurements. In addition, the procedure is reported that was developed to assure that high quality measurements are made in a consistent fashion.

  4. Recent advances and issues in development of silicon carbide composites for fusion applications

    SciTech Connect

    Nozawa, T.; Hinoki, Tetsuya; Hasegawa, Akira; Kohyama, Akira; Katoh, Yutai; Snead, Lance L.; Henager, Charles H.; Hegeman, Hans

    2009-04-30

    Radiation-resistant advanced silicon carbide composites (SiC/SiC) have been developed as a promising candidate of the high-temperature operating advanced fusion DEMO reactor. With the completion of the “proof-of-principle” phase in development of “nuclear-grade” SiC/SiC, the R&D on SiC/SiC is shifting toward the more pragmatic phase, i.e., industrialization of component manufactures and data-basing. In this paper, recent advances and issues in 1) development of component fabrication technology including joining and functional coating, e.g., a tungsten overcoat as a plasma facing barrier, 2) recent updates in characterization of non-irradiated properties, e.g., strength anisotropy and chemical compatibility with solid lithium-based ceramics and lead-lithium liquid metal breeders, and 3) irradiation effects were specifically reviewed. Importantly high-temperature neutron irradiation effects on microstructural evolution, thermal and electrical conductivities and mechanical properties including the fiber/matrix interfacial strength were specified under various irradiation conditions, indicating seemingly very minor influence on the composite performance in the design temperature range.

  5. Joining of silicon carbide using interlayer with matching coefficient of thermal expansion

    SciTech Connect

    Perham, T. |

    1996-11-01

    The primary objective of this study is to develop a technique for joining a commercially available Silicon Carbide that gives good room temperature strength and the potential for good high temperature strength. One secondary objective is that the joining technique be adaptable to SiC{sub f}/SiC composites and/or Nickel based superalloys, and another secondary objective is that the materials provide good neutron irradiation resistance and low activation for potential application inside nuclear fusion reactors. The joining techniques studied here are: (1) reaction bonding with Al-Si/Si/SiC/C; (2) reaction/infiltration with calcium aluminum silicate; (3) ion exchange mechanism to form calcium hexaluminate (a refractory cement); and (4) oxide frit brazing with cordierite.

  6. Microwave-assisted formation of organic monolayers from 1-alkenes on silicon carbide.

    PubMed

    van den Berg, Sebastiaan A; Alonso, Jose Maria; Wadhwa, Kuldeep; Franssen, Maurice C R; Wennekes, Tom; Zuilhof, Han

    2014-09-09

    The rate of formation of covalently linked organic monolayers on HF-etched silicon carbide (SiC) is greatly increased by microwave irradiation. Upon microwave treatment for 60 min at 100 °C (60 W), 1-alkenes yield densely packed, covalently attached monolayers on flat SiC surfaces, a process that typically takes 16 h at 130 °C under thermal conditions. This approach was extended to SiC microparticles. The monolayers were characterized by X-ray photoelectron spectroscopy and static water contact angle measurements. The microwave-assisted reaction is compatible with terminal functionalities such as alkenes that enable subsequent versatile "click" chemistry reactions, further broadening the range and applicability of chemically modified SiC surfaces.

  7. Atomistic modeling of amorphous silicon carbide using a bond-order potential

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.

    2007-02-16

    Molecular dynamics simulations were performed with a Brenner-type bond-order potential to study the melting of silicon carbide (SiC), the structure of amorphous SiC produced by quenching from the melt, and the evolution of the amorphous state after isochronal annealing at elevated temperatures. The simulations reveal that SiC melts above 3700 K with an enthalpy of fusion of about 0.6 eV/atom. The density of the quenched liquid is about 2820 kg/m3, in excellent agreement with the experimental value for SiC amorphized by neutron irradiation. In addition to the loss of long-range order, the quenched liquid shows short-range disorder as measured by the C homonuclear bond ratio. Upon annealing, there is partial recovery of shortrange order.

  8. FUNCTIONALLY GRADED ALUMINA/MULLITE COATINGS FOR PROTECTION OF SILICON CARBIDE CERAMIC COMPONENTS FROM CORROSION

    SciTech Connect

    Prof. Stratis V. Sotirchos

    2001-02-01

    The main objective of this research project was the formulation of processes that can be used to prepare compositionally graded alumina/mullite coatings for protection from corrosion of silicon carbide components (monolithic or composite) used or proposed to be used in coal utilization systems (e.g., combustion chamber liners, heat exchanger tubes, particulate removal filters, and turbine components) and other energy-related applications. Since alumina has excellent resistance to corrosion but coefficient than silicon carbide, the key idea of this project has been to develop graded coatings with composition varying smoothly along their thickness between an inner (base) layer of mullite in contact with the silicon carbide component and an outer layer of pure alumina, which would function as the actual protective coating of the component. (Mullite presents very good adhesion towards silicon carbide and has thermal expansion coefficient very close to that of the latter.)

  9. Dynamic Modulus and Damping of Boron, Silicon Carbide, and Alumina Fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, J. A.; Williams, W.

    1980-01-01

    The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide coated boron fibers were measured from-190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamics fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron based fibers are strongly anelastic, displaying frequency dependent moduli and very high microstructural damping. Ths single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

  10. Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal-transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon-shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

  11. Raman and FTIR Studies of Silicon Carbide Surface Damage from Palladium Implantation in Presence of Hydrogen

    NASA Technical Reports Server (NTRS)

    Muntele, I.; Ila, D.; Muntele, C. J.; Poker, D. B.; Hensley, D. K.; Larkin, David (Technical Monitor)

    2001-01-01

    The ion implantation in a crystal such as silicon carbide will cause both damage in the ion track and in the substrate at the end of the ion track. We used both keV, and MeV Pd ions in fabricating electronic chemical sensors in silicon carbide, which can operate at elevated temperatures. In order to study the feasibility of fabricating an optical chemical sensor (litmus sensor), we need to understand the optical behavior of the embedded damage in the presence of hydrogen, as well as the potential chemical interaction of silicon carbide broken lattice bonds with the hydrogen dissociated from gas by palladium. Implanted samples of silicon carbide were studied using both Raman spectroscopy and FTIR (Fourier Transform-Infrared). The results of this work will be presented during the meeting.

  12. Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

    PubMed

    Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A

    2017-07-07

    Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.

  13. CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS

    SciTech Connect

    Jiang, Weilin; Spurgeon, Steven R.; Liu, Jia; Edwards, Danny J.; Schreiber, Daniel K.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2016-09-26

    The aim of this study is to characterize precipitates in Mg+ ion implanted and high-temperature annealed cubic silicon carbide using scanning transmission electron microscopy, electron energy loss spectroscopy and atom probe tomography.

  14. Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

    NASA Astrophysics Data System (ADS)

    Šimonka, Vito; Nawratil, Georg; Hössinger, Andreas; Weinbub, Josef; Selberherr, Siegfried

    2017-02-01

    We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute three-dimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4H- and 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known growth rate values for the Si- (0 0 0 1) , a- (1 1 2 bar 0) , m- (1 1 bar 0 0) , and C-face (0 0 0 1 bar) . The simulations are based on the proposed interpolation method together with available thermal oxidation models. We additionally analyze the temperature dependence of Silicon Carbide oxidation rates for different crystal faces using Arrhenius plots. The proposed interpolation method is an essential step towards highly accurate three-dimensional oxide growth simulations which help to better understand the anisotropic nature and oxidation mechanism of Silicon Carbide.

  15. Raman and FTIR Studies of Silicon Carbide Surface Damage from Palladium Implantation in Presence of Hydrogen

    NASA Technical Reports Server (NTRS)

    Muntele, I.; Ila, D.; Muntele, C. J.; Poker, D. B.; Hensley, D. K.; Larkin, David (Technical Monitor)

    2001-01-01

    The ion implantation in a crystal such as silicon carbide will cause both damage in the ion track and in the substrate at the end of the ion track. We used both keV, and MeV Pd ions in fabricating electronic chemical sensors in silicon carbide, which can operate at elevated temperatures. In order to study the feasibility of fabricating an optical chemical sensor (litmus sensor), we need to understand the optical behavior of the embedded damage in the presence of hydrogen, as well as the potential chemical interaction of silicon carbide broken lattice bonds with the hydrogen dissociated from gas by palladium. Implanted samples of silicon carbide were studied using both Raman spectroscopy and FTIR (Fourier Transform-Infrared). The results of this work will be presented during the meeting.

  16. Silyl-acetylene polymers for use as precursors to silicon carbide fibers

    SciTech Connect

    Meyer, M.K.

    1991-12-20

    The steps involved in production of silicon carbide fiber using silyl acetylene polymer precursors can be separated into four processing steps: polymer synthesis, fiber spinning, fiber crosslinking, and pyrolysis. Practical experimental considerations in each step are discussed.

  17. Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

  18. Rapid fabrication of a silicon modification layer on silicon carbide substrate.

    PubMed

    Bai, Yang; Li, Longxiang; Xue, Donglin; Zhang, Xuejun

    2016-08-01

    We develop a kind of magnetorheological (MR) polishing fluid for the fabrication of a silicon modification layer on a silicon carbide substrate based on chemical theory and actual polishing requirements. The effect of abrasive concentration in MR polishing fluid on material removal rate and removal function shape is investigated. We conclude that material removal rate will increase and tends to peak value as the abrasive concentration increases to 0.3 vol. %, and the removal function profile will become steep, which is a disadvantage to surface frequency error removal at the same time. The removal function stability is also studied and the results show that the prepared MR polishing fluid can satisfy actual fabrication requirements. An aspheric reflective mirror of silicon carbide modified by silicon is well polished by combining magnetorheological finishing (MRF) using two types of MR polishing fluid and computer controlled optical surfacing (CCOS) processes. The surface accuracy root mean square (RMS) is improved from 0.087λ(λ=632.8  nm) initially to 0.020λ(λ=632.8  nm) in 5.5 h total and the tool marks resulting from MRF are negligible. The PSD analysis results also shows that the final surface is uniformly polished.

  19. All-solid-state supercapacitors on silicon using graphene from silicon carbide

    SciTech Connect

    Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

    2016-05-02

    Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

  20. SiC Design Guide: Manufacture of Silicon Carbide Products (Briefing charts)

    DTIC Science & Technology

    2010-06-08

    DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. 13. SUPPLEMENTARY NOTES Presented at Mirror Technology Days, Boulder...coatings. 15. SUBJECT TERMS Mirrors , structures, silicon carbide, design, inserts, coatings, pockets, ribs, bonding, threads 16. SECURITY...Prescribed by ANSI Std. 239.18 purify protect transport SiC Design Guide Manufacture of Silicon Carbide Products Mirror Technology Days June 7 to 9, 2010

  1. Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC)

    DTIC Science & Technology

    2014-03-01

    Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC) by Jacqueline T. Le and Shane D. Bartus ARL-TR-6861 March...Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC) Jacqueline T. Le George Washington University Shane D...5a. CONTRACT NUMBER W911NF-10-2-0076 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Jacqueline T. Le * and Shane D. Bartus 5d

  2. Displacement Damage Induced Catastrophic Second Breakdown in Silicon Carbide Schottky Power Diodes

    NASA Technical Reports Server (NTRS)

    Scheick, Leif; Selva, Luis; Selva, Luis

    2004-01-01

    A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.

  3. Displacement Damage Induced Catastrophic Second Breakdown in Silicon Carbide Schottky Power Diodes

    NASA Technical Reports Server (NTRS)

    Scheick, Leif; Selva, Luis; Selva, Luis

    2004-01-01

    A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.

  4. Toward a Kinetic Model of Silicon Carbide Condensation in Type II Supernovae

    NASA Astrophysics Data System (ADS)

    Deneault, Ethan A. N.

    2017-01-01

    One of the most interesting types of dust grain extracted from terrestrial meteorites is the silicon carbide X-grain (SiC-X). These grains bear distinct isotopic signatures which classify them as supernova condensates, but their formation within the ejecta has not been well-studied. Using a kinetic chemistry network, we investigate possible pathways that lead to the formation of silicon carbide grains in the cooling outflows of type II supernovae.

  5. Assessment of the advanced clay bonded silicon carbide candle filter materials. Topical report, September 1995

    SciTech Connect

    Alvin, M.A.

    1995-07-01

    Advancements have been made during the past five years to not only increase the strength of the as-manufactured clay bonded silicon carbide candle filter materials, but also to improve their high temperature creep resistance properties. This report reviews these developments, and describes the results of preliminary qualification testing which has been conducted at Westinghouse prior to utilizing the advanced clay bonded silicon carbide filters in high temperature, pressurized, coal-fired combustion and/or gasification applications.

  6. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  7. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2000-01-01

    A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  8. The infiltration of aluminum into silicon carbide compacts

    NASA Astrophysics Data System (ADS)

    Maxwell, P. B.; Martins, G. P.; Olson, D. L.; Edwards, G. R.

    1990-06-01

    Although liquid-metal processing of metal matrix composites offers economic advantages, problems related to the nonwetting nature of the ceramic discontinuous reinforcement create obstacles to its ready implementation. Infiltration can occur only if a threshold pressure is applied to overcome the unfavorable interfacial forces in the system. The research reported in this paper has been devoted primarily to experiments on infiltrating silicon carbide compacts with pure aluminum, aluminum-1 wt pet magnesium, and aluminum-1 wt pet silicon. The major finding has been that an incubation time is necessary before infiltration can proceed, even though the threshold pressure is exceeded. Thus, while the model equations available for predicting the infiltration rate of compacts appear to be adequate, the incubation time can represent the rate-determining step in the process. It is suggested that the mechanism responsible for the incubation phenomenon may be related to a surface modification produced by either reaction of liquid aluminum with an oxide film on the surface of the particles or coverage of the surface by a capillarity-induced aluminum condensate.

  9. Optical thermometry based on level anticrossing in silicon carbide

    PubMed Central

    Anisimov, A. N.; Simin, D.; Soltamov, V. A.; Lebedev, S. P.; Baranov, P. G.; Astakhov, G. V.; Dyakonov, V.

    2016-01-01

    We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz1/2 for a detection volume of approximately 10−6 mm3. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center. PMID:27624819

  10. Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons

    PubMed Central

    2010-01-01

    In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500°C for 5–12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite–type SiC (2H-SiC) with a growth direction of . The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor–solid reaction dominated nanoribbon growth mechanism was discussed. PMID:20676202

  11. Flame synthesis of high purity, nanosized crystalline silicon carbide powder

    SciTech Connect

    Keil, D.G.; Calcote, H.F.; Gill, R.J.

    1996-12-31

    Self-propagating flames in pure silane-acetylene mixtures produce silicon carbide (SiC) powder and hydrogen as main products. Through precise control of the stoichiometry of the reactant gas mixture, it has been possible to produce white SiC at high yields. Characterization of such powders by TEM has shown that the nascent powder consists of polycrystalline hexagonal plates with a narrow size distribution (40 {+-} 7 nm diameter). Infrared spectroscopy of powders indicate microcrystalline SiC and little bound hydrogen. Chemical analysis by the ANSI method showed the powder to be >96 wt% SiC with an impurity of silica (3.9 weight%) due to air exposure of the powder. Traces (0.1 to 0.2 weight%) of both free carbon and free silicon were found. Metal impurities detected by SIMS were typically low: less than 10 ppba for aluminum, sodium, titanium and vanadium. Boron was observed at 10 ppma. Like the oxygen, the boron impurities are probably associated with exposure of the powders to the atmosphere.

  12. Silicon carbide nanowires and composites obtained from carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Yuejian

    In this dissertation a simple route has been developed to synthesize Silicon Carbide (beta-SiC) nanothreads and C-SiC coaxial nanotubes by solid/liquid-state reaction between multiwall carbon nanotubes and silicon conducted at 1473 K and 1723 K, respectively. Through the kinetics study of SiC formation from carbon nanotubes and Si, our results demonstrated that carbon nanotubes may have higher chemical reactivity than other forms of elemental Carbon. Based on the above investigation, CNT/SiC and diamond/CNT/SiC were manufactured. Key factors influencing the mechanical properties of final products, such as phase composition, grain size, stress-strain, sintering time, and sintering temperature were thoroughly studied with Raman spectroscopy, x-ray diffraction, SEM and TEM techniques. Taking advantage of high elasticity of Carbon nanotube and its ability to block the microcrack propagation and dislocation movement, both composites showed enhanced fracture toughness. Carbon nanotubes composites trigger a new field in fundamental science and manifest potential application in multiple industries.

  13. Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons

    NASA Astrophysics Data System (ADS)

    Zhang, Huan; Ding, Weiqiang; He, Kai; Li, Ming

    2010-08-01

    In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500°C for 5-12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite-type SiC (2H-SiC) with a growth direction of [10bar{1}0] . The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor-solid reaction dominated nanoribbon growth mechanism was discussed.

  14. Changes in surface chemistry of silicon carbide (0001) surface with temperature and their effect on friction

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Friction studies were conducted with a silicon carbide (0001) surface contacting polycrystalline iron. The surface of silicon carbide was pretreated: (1) by bombarding it with argon ions for 30 minutes at a pressure of 1.3 pascals; (2) by heating it at 800 C for 3 hours in vacuum at a pressure of 10 to the minus eighth power pascal; or (3) by heating it at 1500 C for 3 hours in a vacuum of 10 to the minus eighth power pascal. Auger emission spectroscopy was used to determine the presence of silicon and carbon and the form of the carbon. The surfaces of silicon carbide bombarded with argon ions or preheated to 800 C revealed the main Si peak and a carbide type of C peak in the Auger spectra. The surfaces preheated to 1500 C revealed only a graphite type of C peak in the Auger spectra, and the Si peak had diminished to a barely perceptible amount. The surfaces of silicon carbide preheated to 800 C gave a 1.5 to 3 times higher coefficient of friction than did the surfaces of silicon carbide preheated to 1500 C. The coefficient of friction was lower in the 11(-2)0 direction than in the 10(-1)0 direction; that is, it was lower in the preferred crystallographic slip direction.

  15. Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer

    NASA Astrophysics Data System (ADS)

    Tang, W.; Meng, B.; Su, W.; Zhang, H. X.

    2012-09-01

    This paper describes the study of the conventional silicon/glass anodic bonding with plasma enhanced chemical vapor deposited silicon carbide (PE-SiC) as the intermediate layer, in order to evaluate the feasibilities of applying PE-SiC as the device's passivation layer prior to the packaging bonding and construction layer based on the bond-and-transfer technique. It is found that the mechanism of this bonding is similar to the traditional anodic bonding. As the PE-SiC thickened, the bond strength declined; meanwhile, the leak rate remained at the same level with the silicon/glass bonding. Further experiments revealed that the bonding increased the interlayer's tensile stress by 70.7 MPa and diminished the stress gradient by 24.6 MPa µm-1.

  16. [Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

    PubMed

    Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

    2013-06-01

    Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

  17. Amorphisation of boron carbide under slow heavy ion irradiation

    NASA Astrophysics Data System (ADS)

    Gosset, D.; Miro, S.; Doriot, S.; Moncoffre, N.

    2016-08-01

    Boron carbide B4C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B4C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10-2 displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

  18. Microstructural optimization of solid-state sintered silicon carbide

    NASA Astrophysics Data System (ADS)

    Vargas-Gonzalez, Lionel R.

    Silicon carbide armor, manufactured through solid-state sintering, liquid-phase sintering, and hot-pressing, is being used by the United States Armed Forces for personal and vehicle protection. There is a lack of consensus, however, on which process results in the best-performing ballistic armor. Previous studies have shown that hot-pressed ceramics processed with secondary oxide and/or rare earth oxides, which exhibit high fracture toughness, perform well in handling and under ballistic impact. This high toughness is due to the intergranular nature of the fracture, creating a tortuous path for cracks and facilitating crack deflection and bridging. However, it has also been shown that higher-hardness sintered SiC materials might perform similarly or better to hot-pressed armor, in spite of the large fracture toughness deficit, if the microstructure (density, grain size, purity) of these materials are improved. In this work, the development of theoretically-dense, clean grain boundary, high hardness solid-state sintered silicon carbide (SiC) armor was pursued. Boron carbide and graphite (added as phenolic resin to ensure the carbon is finely dispersed throughout the microstructure) were used as the sintering aids. SiC batches between 0.25--4.00 wt.% carbon were mixed and spray dried. Cylindrical pellets were pressed at 13.7 MPa, cold-isostatically pressed (CIP) at 344 MPa, sintered under varying sintering soaking temperatures and heating rates, and varying post hot-isostatic pressing (HIP) parameters. Carbon additive amounts between 2.0--2.5 wt.% (based on the resin source), a 0.36 wt.% B4C addition, and a 2050°C sintering soak yielded parts with high sintering densities (˜95.5--96.5%) and a fine, equiaxed microstructure (d50 = 2.525 mum). A slow ramp rate (10°C/min) prevented any occurrence of abnormal grain growth. Post-HIPing at 1900°C removed the remaining closed porosity to yield a theoretically-dense part (3.175 g/cm3, according to rule of mixtures). These

  19. Irradiation-induced effects of proton irradiation on zirconium carbides with different stoichiometries

    SciTech Connect

    Y. Huang; B.R. Maier; T.R. Allen

    2014-10-01

    Zirconium carbide (ZrC) is being considered for utilization in deep burn TRISO fuel particles for hightemperature, gas-cooled reactors. Zirconium carbide has a cubic B1 type crystal structure along with a very high melting point (3420 ?C), exceptional hardness and good thermal and electrical conductivities. Understanding the ZrC irradiation response is crucial for establishing ZrC as an alternative component in TRISO fuel. Until now, very few studies on irradiation effects on ZrC have been released and fundamental aspects of defect evolution and kinetics are not well understood although some atomistic simulations and phenomenological studies have been performed. This work was carried out to understand the damage evolution in float-zone refined ZrC with different stoichiometries. Proton irradiations at 800 ?C up to doses of 3 dpa were performed on ZrCx (where x ranges from 0.9 to 1.2) to investigate the damage evolution. The irradiation-induced defects, such as density of dislocation loops, at different stoichiometries and doses which were characterized by transmission electron microscopy (TEM) is presented and discussed.

  20. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.