Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Prober, D. E.; Rhee, K. W.; Schoelkopf, R. J.; Stahle, C. M.; Teufel, J.; Wollack, E. J.

2004-01-01

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Critical Current Statistics of a Graphene-Based Josephson Junction Infrared Single Photon Detector

NASA Astrophysics Data System (ADS)

Walsh, Evan D.; Lee, Gil-Ho; Efetov, Dmitri K.; Heuck, Mikkel; Crossno, Jesse; Taniguchi, Takashi; Watanabe, Kenji; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

Graphene is a promising material for single photon detection due to its broadband absorption and exceptionally low specific heat. We present a photon detector using a graphene sheet as the weak link in a Josephson junction (JJ) to form a threshold detector for single infrared photons. Calculations show that such a device could experience temperature changes of a few hundred percent leading to sub-Hz dark count rates and internal efficiencies approaching unity. We have fabricated the graphene-based JJ (gJJ) detector and measure switching events that are consistent with single photon detection under illumination by an attenuated laser. We study the physical mechanism for these events through the critical current behavior of the gJJ as a function of incident photon flux.

Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

NASA Technical Reports Server (NTRS)

Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

2014-01-01

A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJ-based microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

NASA Technical Reports Server (NTRS)

Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

2014-01-01

A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

Characterization of Dual-Band Infrared Detectors for Application to Remote Sensing

NASA Technical Reports Server (NTRS)

Abedin, M. Nurul; Refaat, Tamer F.; Xiao, Yegao; Bhat, Ishwara

2005-01-01

NASA Langley Research Center (LaRC), in partnership with the Rensselaer Polytechnic Institute (RPI), developed photovoltaic infrared (IR) detectors suitable at two different wavelengths using Sb-based material systems. Using lattice-matched InGaAsSb grown on GaSb substrates, dual wavelength detectors operating at 1.7 and 2.5 micron wavelengths can be realized. P-N junction diodes are fabricated on both GaSb and InGaAsSb materials. The photodiode on GaSb detects wavelengths at 1.7 micron and the InGaAsSb detector detects wavelengths at 2.2 micron or longer depending on the composition. The films for these devices are grown by metal-organic vapor phase epitaxy (MOVPE). The cross section of the independently accessed back-to-back photodiode dual band detector consists of a p-type substrate on which n-on-p GaInAsSb junction is grown, followed by a p-on-n GaSb junction. There are three ohmic contacts in this structure, one to the p-GaSb top layer, one to the n-GaSb/n-GaInAsSb layer and one to the p-type GaSb substrate. The common terminal is the contact to the n-GaSb/n-GaInAsSb layer. The contact to the n-GaSb/p-GaInAsSb region of the photodiode in the dual band is electrically connected and is accessed at the edge of the photodiode. NASA LaRC acquired the fabricated dual band detector from RPI and characterized the detector at its Detector Characterization Laboratory. Characterization results, such as responsivity, noise, quantum efficiency, and detectivity will be presented.

Fast and High Dynamic Range Imaging with Superconducting Tunnel Junction Detectors

NASA Astrophysics Data System (ADS)

Matsuo, Hiroshi

2014-08-01

We have demonstrated a combined test of the submillimeter-wave SIS photon detectors and GaAs-JFET cryogenic integrated circuits. A relatively large background photo-current can be read out by fast-reset integrating amplifiers. An integration time of 1 ms enables fast frame rate readout and large dynamic range imaging, with an expected dynamic range of 8,000 in 1 ms. Ultimate fast and high dynamic range performance of superconducting tunnel junction detectors (STJ) will be obtained when photon counting capabilities are employed. In the terahertz frequencies, when input photon rate of 100 MHz is measured, the photon bunching gives us enough timing resolution to be used as phase information of intensity fluctuation. Application of photon statistics will be a new tool in the terahertz frequency region. The design parameters of STJ terahertz photon counting detectors are discussed.

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

NASA Astrophysics Data System (ADS)

Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

2018-03-01

Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (<3%), and a response correlation coefficient (>0.995) with a response time of <4 ms to the inhomogeneous IR illumination. The presented hybrid configuration also benefits from a straightforward low-temperature fabrication process. These advantages of the PEDOT:PSS/n-Si heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

NASA Astrophysics Data System (ADS)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.

Currents Induced by Injected Charge in Junction Detectors

PubMed Central

Gaubas, Eugenijus; Ceponis, Tomas; Kalesinskas, Vidas

2013-01-01

The problem of drifting charge-induced currents is considered in order to predict the pulsed operational characteristics in photo- and particle-detectors with a junction controlled active area. The direct analysis of the field changes induced by drifting charge in the abrupt junction devices with a plane-parallel geometry of finite area electrodes is presented. The problem is solved using the one-dimensional approach. The models of the formation of the induced pulsed currents have been analyzed for the regimes of partial and full depletion. The obtained solutions for the current density contain expressions of a velocity field dependence on the applied voltage, location of the injected surface charge domain and carrier capture parameters. The drift component of this current coincides with Ramo's expression. It has been illustrated, that the synchronous action of carrier drift, trapping, generation and diffusion can lead to a vast variety of possible current pulse waveforms. Experimental illustrations of the current pulse variations determined by either the rather small or large carrier density within the photo-injected charge domain are presented, based on a study of Si detectors. PMID:24036586

Anisotropic-Scale Junction Detection and Matching for Indoor Images.

PubMed

Xue, Nan; Xia, Gui-Song; Bai, Xiang; Zhang, Liangpei; Shen, Weiming

Junctions play an important role in characterizing local geometrical structures of images, and the detection of which is a longstanding but challenging task. Existing junction detectors usually focus on identifying the location and orientations of junction branches while ignoring their scales, which, however, contain rich geometries of images. This paper presents a novel approach for junction detection and characterization, which especially exploits the locally anisotropic geometries of a junction and estimates its scales by relying on an a-contrario model. The output junctions are with anisotropic scales, saying that a scale parameter is associated with each branch of a junction and are thus named as anisotropic-scale junctions (ASJs). We then apply the new detected ASJs for matching indoor images, where there are dramatic changes of viewpoints and the detected local visual features, e.g., key-points, are usually insufficient and lack distinctive ability. We propose to use the anisotropic geometries of our junctions to improve the matching precision of indoor images. The matching results on sets of indoor images demonstrate that our approach achieves the state-of-the-art performance on indoor image matching.Junctions play an important role in characterizing local geometrical structures of images, and the detection of which is a longstanding but challenging task. Existing junction detectors usually focus on identifying the location and orientations of junction branches while ignoring their scales, which, however, contain rich geometries of images. This paper presents a novel approach for junction detection and characterization, which especially exploits the locally anisotropic geometries of a junction and estimates its scales by relying on an a-contrario model. The output junctions are with anisotropic scales, saying that a scale parameter is associated with each branch of a junction and are thus named as anisotropic-scale junctions (ASJs). We then apply the new detected ASJs for matching indoor images, where there are dramatic changes of viewpoints and the detected local visual features, e.g., key-points, are usually insufficient and lack distinctive ability. We propose to use the anisotropic geometries of our junctions to improve the matching precision of indoor images. The matching results on sets of indoor images demonstrate that our approach achieves the state-of-the-art performance on indoor image matching.

Origin of the Ultrafast Response of the Lateral Photovoltaic Effect in Amorphous MoS2/Si Junctions.

PubMed

Hu, Chang; Wang, Xianjie; Miao, Peng; Zhang, Lingli; Song, Bingqian; Liu, Weilong; Lv, Zhe; Zhang, Yu; Sui, Yu; Tang, Jinke; Yang, Yanqiang; Song, Bo; Xu, Ping

2017-05-31

The lateral photovoltaic (LPV) effect has attracted much attention for a long time because of its application in position-sensitive detectors (PSD). Here, we report the ultrafast response of the LPV in amorphous MoS 2 /Si (a-MoS 2 /Si) junctions prepared by the pulsed laser deposition (PLD) technique. Different orientations of the built-in field and the breakover voltages are observed for a-MoS 2 films deposited on p- and n-type Si wafers, resulting in the induction of positive and negative voltages in the a-MoS 2 /n-Si and a-MoS 2 /p-Si junctions upon laser illumination, respectively. The dependence of the LPV on the position of the illumination shows very high sensitivity (183 mV mm -1 ) and good linearity. The optical relaxation time of LPV with a positive voltage was about 5.8 μs in a-MoS 2 /n-Si junction, whereas the optical relaxation time of LPV with a negative voltage was about 2.1 μs in a-MoS 2 /p-Si junction. Our results clearly suggested that the inversion layer at the a-MoS 2 /Si interface made a good contribution to the ultrafast response of the LPV in a-MoS 2 /Si junctions. The large positional sensitivity and ultrafast relaxation of LPV may promise the a-MoS 2 /Si junction's applications in fast position-sensitive detectors.

Graphene-Based Josephson-Junction Single-Photon Detector

NASA Astrophysics Data System (ADS)

Walsh, Evan D.; Efetov, Dmitri K.; Lee, Gil-Ho; Heuck, Mikkel; Crossno, Jesse; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

2017-08-01

We propose to use graphene-based Josephson junctions (GJJs) to detect single photons in a wide electromagnetic spectrum from visible to radio frequencies. Our approach takes advantage of the exceptionally low electronic heat capacity of monolayer graphene and its constricted thermal conductance to its phonon degrees of freedom. Such a system could provide high-sensitivity photon detection required for research areas including quantum information processing and radio astronomy. As an example, we present our device concepts for GJJ single-photon detectors in both the microwave and infrared regimes. The dark count rate and intrinsic quantum efficiency are computed based on parameters from a measured GJJ, demonstrating feasibility within existing technologies.

IR detection and energy harvesting using antenna coupled MIM tunnel diodes

NASA Astrophysics Data System (ADS)

Yesilkoy, Filiz

The infrared (IR) spectrum lies between the microwave and optical frequency ranges, which are well suited for communication and energy harvesting purposes, respectively. The long wavelength IR (LWIR) spectrum, corresponding to wavelengths from 8microm to 15microm, includes the thermal radiation emitted by objects at room temperature and the Earth's terrestrial radiation. Therefore, LWIR detectors are very appealing for thermal imaging purposes. Thermal detectors developed so far either demand cryogenic operation for fast detection, or they rely on the accumulation of thermal energy in their mass and subsequent measurable changes in material properties. Therefore, they are relatively slow. Quantum detectors allow for tunable and instantaneous detection but are expensive and require complex processes for fabrication. Bolometer detectors are simple and cheap but do not allow for tunability or for rapid detection. Harvesting the LWIR radiation energy sourced by the Earth's heating/cooling cycle is very important for the development of mobile energy resources. While speed is not as significant an issue here, conversion efficiency is an eminent problem for cheap, large area energy transduction. This dissertation addresses the development of tunable, fast, and low cost wave detectors that can operate at room temperature and, when produced in large array format, can harvest Earth's terrestrial radiation energy. This dissertation demonstrates the design, fabrication and testing of Antenna Coupled Metal-Insulator-Metal (ACMIM) tunnel diodes optimized for 10microm wavelength radiation detection. ACMIM tunnel diodes operate as electromagnetic wave detectors: the incident radiation is coupled by an antenna and converted into a 30 terahertz signal that is rectified by a fast tunneling MIM diode. For efficient IR radiation coupling, the antenna geometry and its critical dimensions are studied using a commercial finite-element based multi-physics simulation tool, and the half-wave dipole-like bow-tie antennas are fabricated using simulation-optimized geometries. The major challenge of this work is designing and fabricating MIM diodes and coupled antennas with internal capacitances and resistances small enough to allow response in the desired frequency range (˜30 THz) and yet capable of efficiently coupling to the incident radiation. It is crucial to keep the RC time constant of the tunnel junction small to achieve the requisite cut-off frequency and adequate rectification efficiency. Moreover, a low junction resistance is necessary to load the coupled AC power across the MIM junction. For energy harvesting applications, the device has to operate without an external bias, which requires asymmetry at the zero bias operation point. To address these requirements, the MIM tunnel junction is established so that one electrode has a field enhancing sharp tip (cathode) and the other is a rectangular patch. This asymmetric geometry not only offers asymmetric current-voltage behavior at the zero bias point, but also it decouples the junction resistance and capacitance by concentrating the charge transport in a small volume around the tip. Various fabrication methods are developed in order to create small junction area (= low parasitic capacitance), low junction resistance (= effective power coupling through antenna), asymmetry (= zero bias operation), high fabrication yield and low cost ACMIM tunnel diodes. High resolution fabrication needs are accomplished by electron beam lithography and nano-accuracy in the junction area is achieved by employing dose modifying proximity effect correction and critical alignment methods. Our Ni/NiOx/Ni ACMIM diodes with an optimized insulation layer created with O2 plasma oxidation are the most successful devices presented to date. A novel fabrication technique called "strain assisted self lift-off process" is used to achieve small junction area devices without relying on lithographic resolution. This technique eliminates the rival parasitic capacitance issue of today's ACMIM tunnel diodes and does not rely on extreme-high resolution lithography technologies.

High-speed photodetectors.

PubMed

Anderson, L K; McMurtry, B J

1966-10-01

This paper is intended as a status report on high-speed detectors for the visible and near-infrared portion of the optical spectrum. Both vacuum and solid-state detectors are discussed, with the emphasis on those devices which can be used as direct (noncoherent) detectors of weak optical signals modulated at microwave frequencies. The best detectors for this application have internal current gain and in this regard the relevant properties and limitations of high-frequency secondary emission multiplication in vacuum tube devices and avalanche multiplication in p-n junctions are summarized.

Photovoltaic radiation detector element

DOEpatents

Agouridis, Dimitrios C.

1983-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

Dark Current Reduction of IR Detectors

DTIC Science & Technology

2017-10-19

demonstrating a novel dark current reduction approach for dense infrared detector arrays. This technique is based on the diffusion control junction (DCJ...fabricate and test detector arrays with and without DCJs on the same wafer and demonstrate the effectiveness of the DCJ approach in reducing dark current...subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, Pavel; Gatti, Emilio

1987-01-01

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1987-08-18

A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

Cryogenic, high-resolution x-ray detector with high count rate capability

DOEpatents

Frank, Matthias; Mears, Carl A.; Labov, Simon E.; Hiller, Larry J.; Barfknecht, Andrew T.

2003-03-04

A cryogenic, high-resolution X-ray detector with high count rate capability has been invented. The new X-ray detector is based on superconducting tunnel junctions (STJs), and operates without thermal stabilization at or below 500 mK. The X-ray detector exhibits good resolution (.about.5-20 eV FWHM) for soft X-rays in the keV region, and is capable of counting at count rates of more than 20,000 counts per second (cps). Simple, FET-based charge amplifiers, current amplifiers, or conventional spectroscopy shaping amplifiers can provide the electronic readout of this X-ray detector.

Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires

PubMed Central

2016-01-01

A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications. PMID:27615556

Super Photon Counters

NASA Technical Reports Server (NTRS)

Mather, John

1999-01-01

The perfect photon detector would measure the arrival time, the energy, the polarization, and the position of every arriving quantum, but that is easier said than done. Two groups have now succeeded in doing time-resolved spectroscopy on the Crab Nebula pulsar, measuring everything but the polarization, with reports from Romani et al. at Stanford and from Perryman et al. at ESTEC. Both groups use superconducting detectors to gain the necessary speed and sensitivity. The photon can heat the electrons in a superconductor biased in the middle of its resistive transition, or break bound superconducting electron-hole pairs, which can then be collected. Three years ago, Peacock et al. reported that they had detected single optical photons with a superconducting tunnel junction (STJ), and Paresce wrote a News and Views article. A tunnel junction uses two pieces of conductive material, separated by a tiny gap of insulating material or even vacuum. If the gap is thin enough, electrons can tunnel across anyway, and if the conductors are superconductors, the junction displays very useful quantum mechanical properties and electrical nonlinearities. Amplifiers, detectors, oscillators, and computer circuits can all be made from them. Their special advantage is that they operate at very low temperatures, dissipate very little power, operate very fast, and are very small.

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

PubMed Central

Feruglio, Sylvain; Lu, Guo-Neng; Garda, Patrick; Vasilescu, Gabriel

2008-01-01

A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications. PMID:27873887

Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

PubMed Central

Xia, Hui; Li, Tian-Xin; Tang, Heng-Jing; Zhu, Liang; Li, Xue; Gong, Hai-Mei; Lu, Wei

2016-01-01

Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetctors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale. PMID:26892069

Cryogenic photodetectors

NASA Astrophysics Data System (ADS)

Chardin, G.

2000-03-01

Some of the most significant developments in cryogenic photodetectors are presented. In particular, the main characteristics of microbolometers involving Transition Edge- and NTD-sensors and offering resolutions of a few eV in the keV range, superconducting tunnel junction detectors with resolutions of the order of 10 eV or offering position sensitivity, and infrared bolometers with recent developments towards matrix detectors are discussed. Some of the recent achievements using large mass bolometers for gamma and neutron discriminating detectors, and future prospects of single photon detection in the far infrared using Single Electron Transistor devices are also presented.

Development of a fountain detector for spectroscopy of secondary electrons in scanning electron microscopy

NASA Astrophysics Data System (ADS)

Agemura, Toshihide; Kimura, Takashi; Sekiguchi, Takashi

2018-04-01

The low-pass secondary electron (SE) detector, the so-called “fountain detector (FD)”, for scanning electron microscopy has high potential for application to the imaging of low-energy SEs. Low-energy SE imaging may be used for detecting the surface potential variations of a specimen. However, the detected SEs include a certain fraction of tertiary electrons (SE3s) because some of the high-energy backscattered electrons hit the grid to yield SE3s. We have overcome this difficulty by increasing the aperture ratio of the bias and ground grids and using the lock-in technique, in which the AC field with the DC offset was applied on the bias grid. The energy-filtered SE images of a 4H-SiC p-n junction show complex behavior according to the grid bias. These observations are clearly explained by the variations of Auger spectra across the p-n junction. The filtered SE images taken with the FD can be applied to observing the surface potential variation of specimens.

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Amin, Yusoff Mohd; Periasamy, Vengadesh

2015-01-01

Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors. PMID:25730484

6 x 6-cm fully depleted pn-junction CCD for high-resolution spectroscopy in the 0.1- to 15-keV photon energy range

NASA Astrophysics Data System (ADS)

von Zanthier, Christoph; Holl, Peter; Kemmer, Josef; Lechner, Peter; Maier, B.; Soltau, Heike; Stoetter, R.; Braeuninger, Heinrich W.; Dennerl, Konrad; Haberl, Frank; Hartmann, R.; Hartner, Gisela D.; Hippmann, H.; Kastelic, E.; Kink, W.; Krause, N.; Meidinger, Norbert; Metzner, G.; Pfeffermann, Elmar; Popp, M.; Reppin, Claus; Stoetter, Diana; Strueder, Lothar; Truemper, Joachim; Weber, U.; Carathanassis, D.; Engelhard, S.; Gebhart, Th.; Hauff, D.; Lutz, G.; Richter, R. H.; Seitz, H.; Solc, P.; Bihler, Edgar; Boettcher, H.; Kendziorra, Eckhard; Kraemer, J.; Pflueger, Bernhard; Staubert, Ruediger

1998-04-01

The concept and performance of the fully depleted pn- junction CCD system, developed for the European XMM- and the German ABRIXAS-satellite missions for soft x-ray imaging and spectroscopy in the 0.1 keV to 15 keV photon range, is presented. The 58 mm X 60 mm large pn-CCD array uses pn- junctions for registers and for the backside instead of MOS registers. This concept naturally allows to fully deplete the detector volume to make it an efficient detector to photons with energies up to 15 keV. For high detection efficiency in the soft x-ray region down to 100 eV, an ultrathin pn-CCD backside deadlayer has been realized. Each pn-CCD-channel is equipped with an on-chip JFET amplifier which, in combination with the CAMEX-amplifier and multiplexing chip, facilitates parallel readout with a pixel read rate of 3 MHz and an electronic noise floor of ENC < e-. With the complete parallel readout, very fast pn-CCD readout modi can be implemented in the system which allow for high resolution photon spectroscopy of even the brightest x-ray sources in the sky.

New processes and materials for ultraviolet detection with solid state devices

NASA Technical Reports Server (NTRS)

Chopra, D.

1977-01-01

The three major effects that degrade external responsivity of silicon from the 1/lambda theoretical curve for a quantum detector are: surface reflectance, surface recombination, and junction depth. Since the p-n junction must be very shallow, problems relating to surface are further enhanced. MOS type of processing is necessary. HCl oxides and numerous acid clean-ups are utilized in order to obtain a contamination free surface with low Qss levels. Stringent process controls such as CV shifts, spreading resistance measurements, thickness monitoring etc., are used to analyze the surface contaminations, surface mobile charges, surface concentrations, junction depth, oxide thickness etc. Low surface concentrations of 10 to the 18th atoms/cu cm are achieved by low temperature boron nitride depositions. Shallow junction depths of the order of a few tenths of a micron are achieved by low temperature controlled diffusions. In order to improve breakdown characteristics of these shallow junction devices, field plate and deep diffused p(+) ring geometries are used.

Method and Characterization of Pyroelectric Coefficients for Determining Material Figures of Merit for Infrared (IR) Detectors

DTIC Science & Technology

2013-12-01

and the signal is read as a photocurrent or at a photovoltaic p-n junction. These detectors can provide high-sensitivity and fast refresh rates and...Alternative methods can be used to modulate the sample temperature directly; for example, by using modern Peltier devices and thermoelectric ...commercially-available hardware. The setup consist of three main components: (1) A temperature regulated thermoelectric stage; (2) A high-sensitivity

n-B-pi-p Superlattice Infrared Detector

NASA Technical Reports Server (NTRS)

Ting, David Z.; Bandara, Sumith V.; Hill, Cory J.; Gunapala, Sarath D.

2011-01-01

A specially designed barrier (B) is inserted at the n-pi junction [where most GR (generation-recombination) processes take place] in the standard n-pi-p structure to substantially reduce generation-recombination dark currents. The resulting n-Bpi- p structure also has reduced tunneling dark currents, thereby solving some of the limitations to which current type II strained layer superlattice infrared detectors are prone. This innovation is compatible with common read-out integrated circuits (ROICs).

Cryogenic measurements of aerojet GaAs n-JFETs

NASA Technical Reports Server (NTRS)

Goebel, John H.; Weber, Theodore T.

1993-01-01

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Principle of the electrically induced Transient Current Technique

NASA Astrophysics Data System (ADS)

Bronuzzi, J.; Moll, M.; Bouvet, D.; Mapelli, A.; Sallese, J. M.

2018-05-01

In the field of detector development for High Energy Physics, the so-called Transient Current Technique (TCT) is used to characterize the electric field profile and the charge trapping inside silicon radiation detectors where particles or photons create electron-hole pairs in the bulk of a semiconductor device, as PiN diodes. In the standard approach, the TCT signal originates from the free carriers generated close to the surface of a silicon detector, by short pulses of light or by alpha particles. This work proposes a new principle of charge injection by means of lateral PN junctions implemented in one of the detector electrodes, called the electrical TCT (el-TCT). This technique is fully compatible with CMOS technology and therefore opens new perspectives for assessment of radiation detectors performances.

Ultra-high-mass mass spectrometry with charge discrimination using cryogenic detectors

DOEpatents

Frank, Matthias; Mears, Carl A.; Labov, Simon E.; Benner, W. Henry

1999-01-01

An ultra-high-mass time-of-flight mass spectrometer using a cryogenic particle detector as an ion detector with charge discriminating capabilities. Cryogenic detectors have the potential for significantly improving the performance and sensitivity of time-of-flight mass spectrometers, and compared to ion multipliers they exhibit superior sensitivity for high-mass, slow-moving macromolecular ions and can be used as "stop" detectors in time-of-flight applications. In addition, their energy resolving capability can be used to measure the charge state of the ions. Charge discrimination is very valuable in all time-of-flight mass spectrometers. Using a cryogenically-cooled Nb-Al.sub.2 O.sub.3 -Nb superconductor-insulator-superconductor (SIS) tunnel junction (STJ) detector operating at 1.3 K as an ion detector in a time-of-flight mass spectrometer for large biomolecules it was found that the STJ detector has charge discrimination capabilities. Since the cryogenic STJ detector responds to ion energy and does not rely on secondary electron production, as in the conventionally used microchannel plate (MCP) detectors, the cryogenic detector therefore detects large molecular ions with a velocity-independent efficiency approaching 100%.

Investigation of properties of nanobridge Josephson junctions and superconducting tracks fabricated by FIB

NASA Astrophysics Data System (ADS)

Li, B.; Godfrey, T.; Cox, D.; Li, T.; Gallop, J.; Galer, S.; Nisbet, A.; Romans, Ed; Hao, L.

2018-02-01

An important requirement across a range of sensitive detectors is to determine accurately the energy deposited by the impact of a particle in a small volume. The particle may be anything from a visible photon through to an X-ray or massive charged particle. We have been developing nanobridge Josephson junctions based SQUIDs and nanoSQUID devices covering the entire range of particle detection energies from 1eV to MeV. In this paper we discuss some developments in nanobridge Josephson junctions fabrication using focussed ion beam (FIB) and how these developments impact future applications. We focus on tuning of the transition temperature of a superconducting thin-film absorber, with the aim to match the absorber Tc to the working temperature range of the SQUID and also on using a new Xe FIB to improve Josephson junction and superconducting film quality.

Position sensitive detection of nuclear radiation mediated by non equilibrium phonons at low temperatures

NASA Astrophysics Data System (ADS)

Pröbst, F.; Peterreins, Th.; Feilitzsch, F. v.; Kraus, H.

1990-03-01

Many experiments in nuclear and particle physics would benefit from the development of a device capable of detecting non-ionizing events with a low energy threshold. In this context, we report on experimental tests of a detector based on the registration of nonequilibrium phonons. The device is composed of a silicon single crystal (size: 20×10×3 mm 3) and of an array of superconducting tunnel junctions evaporated onto the surface of the crystal. The junctions serve as sensors for phonons created by absorption of nuclear radiation in the crystal. We show how pulse height analysis and the investigation of time differences between correlated pulses in different junctions can be used to obtain information about the point of absorption.

High-Operating Temperature HgCdTe: A Vision for the Near Future

NASA Astrophysics Data System (ADS)

Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

2016-09-01

We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the background radiation can be reduced by 90%, then room-temperature operation is possible.

Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.

PubMed

Zhu, Jian; Katine, J A; Rowlands, Graham E; Chen, Yu-Jin; Duan, Zheng; Alzate, Juan G; Upadhyaya, Pramey; Langer, Juergen; Amiri, Pedram Khalili; Wang, Kang L; Krivorotov, Ilya N

2012-05-11

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Effect of gap junctions on the firing patterns and synchrony for different external inputs in the striatal fast-spiking neuron network.

PubMed

Zhang, Mingming; Zhao, Zongya; He, Ping; Wang, Jue

2014-01-01

Gap junctions are the mechanism for striatal fast-spiking interneurons (FSIs) to interconnect with each other and play an important role in determining the physiological functioning of the FSIs. To investigate the effect of gap junctions on the firing activities and synchronization of the network for different external inputs, a simple network with least connections and a Newman-Watts small-world network were constructed. Our research shows that both properties of neural networks are related to the conductance of the gap junctions, as well as the frequency and correlation of the external inputs. The effect of gap junctions on the synchronization of network is different for inputs with different frequencies and correlations. The addition of gap junctions can promote the network synchrony in some conditions but suppress it in others, and they can inhibit the firing activities in most cases. Both the firing rate and synchronization of the network increase along with the increase of the electrical coupling strength for inputs with low frequency and high correlation. Thus, the network of coupled FSIs can act as a detector for synchronous synaptic input from cortex and thalamus.

Surface Conduction in III-V Semiconductor Infrared Detector Materials

NASA Astrophysics Data System (ADS)

Sidor, Daniel Evan

III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are ineffectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture offers a potential solution. III-V bulk unipolar barrier detectors that effectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated.

Comparison of Detector Technologies for CAPS

NASA Technical Reports Server (NTRS)

Stockum, Jana L.

2005-01-01

In this paper, several different detectors are examined for use in a Comet/Asteroid Protection System (CAPS), a conceptual study for a possible future space-based system. Each detector will be examined for its future (25 years or more in the future) ability to find and track near-Earth Objects (NEOs) from a space-based detection platform. Within the CAPS study are several teams of people who each focus on different aspects of the system concept. This study s focus is on detection devices. In particular, evaluations on the following devices have been made: charge-coupled devices (CCDs), charge-injected devices (CIDs), superconducting tunneling junctions (STJs), and transition edge sensors (TESs). These devices can be separated into two main categories; the first category includes detectors that are currently being widely utilized, such as CCDs and CIDs. The second category includes experimental detectors, such as STJs and TESs. After the discussion of the detectors themselves, there will be a section devoted to the explicit use of these detectors with CAPS.

New type of multijunction thermopile IR detector

NASA Astrophysics Data System (ADS)

Sun, Tietun; Guo, Lihui

1996-09-01

A newly designed thin-film thermopile infrared detector, which as an absorption layer and a sensitive area on two sides are fabricated using integrated-circuit technology. The device uses a series-connected thermocouples array whose `hot' junction are supported on a thin Myler film of 1 - 3 micrometers thickness. By a special method of fasting the shadow mask, the thermopile with 48 Bi-Sb couples for 2 X 2 mm(superscript 2) area produces a responsivity of 50 - 70 V/W and relaxation time of about 70 ms.

Using electron-tunneling refrigerators to cool electrons, membranes, and sensors

NASA Astrophysics Data System (ADS)

Miller, Nathan A.

Many cryogenic devices require temperatures near 100 mK for optimal performance, such as thin-film, superconducting detectors. Examples include the submillimeter SCUBA camera on the James Clerk Maxwell Telescope, high-resolution X-ray sensors for semiconductor defect analysis, and a planned satellite to search for polarization in the cosmic microwave background. The cost, size, and complexity of refrigerators used to reach 100 mK (dilution and adiabatic demagnetization refrigerators) are significant and alternative technologies are desirable. We demonstrate work on developing a new option for cooling detectors to 100 mK bath temperatures. Solid-state refrigerators based on Normal metal/Insulator/Superconductor (NIS) tunnel junctions can provide cooling from pumped 3He bath temperatures (˜300 mK) to 100 mK. The cooling mechanism is the preferential tunneling of the highest energy (hottest) electrons from the normal metal through the biased tunnel junctions into the superconductor. When NIS refrigerators are combined with a micro-machined membrane, both the electrons and phonons of the membrane can be cooled. We have developed NIS-cooled membranes with both large temperature reductions and large cooling powers. We have shown the first cooling of a bulk material by cooling a neutron transmutation doped (NTD) thermistor. The fabrication of NIS refrigerators can be integrated with existing detector technology. For the first time, we have successfully integrated NIS refrigerators with both mm-wave and X-ray detectors. In particular, we have cooled X-ray detectors by more than 100 mK and have achieved a resolution of <10 eV at 6 keV at a bath temperature 85 mK above the transition temperature of the detector. The use of integrated NIS refrigerators makes the remarkable performance of cryogenic detectors available from 300 mK platforms. We have also performed preliminary work towards building a general-purpose cooling platform for microelectronics devices on separate chips.

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

Development of multi-layer crystal detector and related front end electronics

NASA Astrophysics Data System (ADS)

Cardarelli, R.; Di Ciaccio, A.; Paolozzi, L.

2014-05-01

A crystal (diamond) particle detector has been developed and tested, whose constitute elements are a multi-layer polycrystalline diamond and a pick-up system capable of collecting in parallel the charge produced in the layers. The charge is read with a charge-to-voltage amplifier (5-6 mV/fC) realized with bipolar junction transistors in order to minimize the effect of the detector capacitance. The tests performed with cosmic rays and at the beam test facility of Frascati with 500 MeV electrons in single electron mode operation have shown that a detector with 4-5 layers of 250 μm thickness each and 9 mm2 active area exhibits an upper limit of 150 ps time resolution for minimum ionizing particles at an operating voltage of about 350 V.

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

PubMed

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A; Krivorotov, Ilya N; Ocker, Berthold; Langer, Juergen; Wang, Kang L; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-04-07

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Giant spin-torque diode sensitivity in the absence of bias magnetic field

PubMed Central

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A.; Krivorotov, Ilya N.; Ocker, Berthold; Langer, Juergen; Wang, Kang L.; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-01-01

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors. PMID:27052973

Radiation power and linewidth of a semifluxon-based Josephson oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paramonov, M.; Fominsky, M. Yu.; Koshelets, V. P.

We demonstrate a high-frequency generator operating at ∼200 GHz based on flipping a semifluxon in a Josephson junction of moderate normalized length. The semifluxon spontaneously appears at the π discontinuity of the Josephson phase artificially created by means of two tiny current injectors. The radiation is detected by an on-chip detector (tunnel junction). The estimated radiation power (at the detector) is ∼8 nW and should be compared with the dc power of ∼100 nW consumed by the generator. The measured radiation linewidth, as low as 1.1 MHz, is typical for geometrical (Fiske) resonances, although we tried to suppress such resonances by placing well-matched microwavemore » transformers at its both ends. Making use of a phase-locking feedback loop, we are able to reduce the radiation linewidth to less than 1 Hz measured relative to the reference oscillator and defined just by the resolution of our measurement setup.« less

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, M. A.; Yang, G.; Sun, X.; Lu, W.; Merritt, S.; Beck, J.

2016-01-01

We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

High density processing electronics for superconducting tunnel junction x-ray detector arrays

NASA Astrophysics Data System (ADS)

Warburton, W. K.; Harris, J. T.; Friedrich, S.

2015-06-01

Superconducting tunnel junctions (STJs) are excellent soft x-ray (100-2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays - currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I-V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

NASA Technical Reports Server (NTRS)

Barry, Mamadou Y.

1999-01-01

The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

NIS tunnel junction as an x-ray photon sensor

NASA Astrophysics Data System (ADS)

Azgui, Fatma; Mears, Carl A.; Labov, Simon E.; Frank, Matthias A.; Sadoulet, Bernard; Brunet, E.; Hiller, Lawrence J.; Lindeman, Mark A.; Netel, Harrie

1995-09-01

This work presents the first results of our development of normal-insulating-superconducting tunnel junctions used as energy dispersive detectors for low energy particles. The device described here is a Ag/Al(subscript 2)O(subscript 3)/Al tunnel junction of area 1.5 multiplied by 10(superscript 4) micrometer squared with thicknesses of 200 nm for the normal Ag strip and 100 nm for the superconducting Al film. Two different high-speed SQUID systems manufactured by quantum magnetics and HYPRES, respectively, were used for the readout of this device. At 80 mK bath temperature we obtained an energy resolution DeltaE(subscript FWHM) equals 250 eV for 5.89 keV x rays absorbed directly in the normal metal. This energy resolution appears to be limited in large part by the observed strong position dependence of the device response.

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

DOEpatents

Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

DOEpatents

Bertuccio, G.; Rehak, P.; Xi, D.

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier. 6 figs.

Measurement of the atmospheric muon flux with the NEMO Phase-1 detector

NASA Astrophysics Data System (ADS)

Aiello, S.; Ameli, F.; Amore, I.; Anghinolfi, M.; Anzalone, A.; Barbarino, G.; Battaglieri, M.; Bazzotti, M.; Bersani, A.; Beverini, N.; Biagi, S.; Bonori, M.; Bouhadef, B.; Brunoldi, M.; Cacopardo, G.; Capone, A.; Caponetto, L.; Carminati, G.; Chiarusi, T.; Circella, M.; Cocimano, R.; Coniglione, R.; Cordelli, M.; Costa, M.; D'Amico, A.; De Bonis, G.; De Marzo, C.; De Rosa, G.; De Ruvo, G.; De Vita, R.; Distefano, C.; Falchini, E.; Flaminio, V.; Fratini, K.; Gabrielli, A.; Galatà, S.; Gandolfi, E.; Giacomelli, G.; Giorgi, F.; Giovanetti, G.; Grimaldi, A.; Habel, R.; Imbesi, M.; Kulikovsky, V.; Lattuada, D.; Leonora, E.; Lonardo, A.; Lo Presti, D.; Lucarelli, F.; Marinelli, A.; Margiotta, A.; Martini, A.; Masullo, R.; Migneco, E.; Minutoli, S.; Morganti, M.; Musico, P.; Musumeci, M.; Nicolau, C. A.; Orlando, A.; Osipenko, M.; Papaleo, R.; Pappalardo, V.; Piattelli, P.; Piombo, D.; Raia, G.; Randazzo, N.; Reito, S.; Ricco, G.; Riccobene, G.; Ripani, M.; Rovelli, A.; Ruppi, M.; Russo, G. V.; Russo, S.; Sapienza, P.; Sciliberto, D.; Sedita, M.; Shirokov, E.; Simeone, F.; Sipala, V.; Spurio, M.; Taiuti, M.; Trasatti, L.; Urso, S.; Vecchi, M.; Vicini, P.; Wischnewski, R.

2010-05-01

The NEMO Collaboration installed and operated an underwater detector including prototypes of the critical elements of a possible underwater km 3 neutrino telescope: a four-floor tower (called Mini-Tower) and a Junction Box. The detector was developed to test some of the main systems of the km 3 detector, including the data transmission, the power distribution, the timing calibration and the acoustic positioning systems as well as to verify the capabilities of a single tridimensional detection structure to reconstruct muon tracks. We present results of the analysis of the data collected with the NEMO Mini-Tower. The position of photomultiplier tubes (PMTs) is determined through the acoustic position system. Signals detected with PMTs are used to reconstruct the tracks of atmospheric muons. The angular distribution of atmospheric muons was measured and results compared to Monte Carlo simulations.

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

NASA Astrophysics Data System (ADS)

Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.

2016-09-01

This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

Predictable quantum efficient detector based on n-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

2017-12-01

The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap

NASA Technical Reports Server (NTRS)

Rippert, Edward D.; Ketterson, John B.; Chen, Jun; Song, Shenian; Lomatch, Susanne; Maglic, Stevan R.; Thomas, Christopher; Cheida, M. A.; Ulmer, Melville P.

1992-01-01

An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

PubMed

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng; Zhou, Peng

2018-04-01

2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS 2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.

Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, W. C.; Wang, R.; Xu, Z. J.

2014-05-28

In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scalemore » array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.« less

The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

PubMed Central

Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

2013-01-01

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction. PMID:24194676

Discovery of a photoresponse amplification mechanism in compensated PN junctions

NASA Astrophysics Data System (ADS)

Zhou, Yuchun; Liu, Yu-Hsin; Rahman, Samia N.; Hall, David; Sham, L. J.; Lo, Yu-Hwa

2015-01-01

We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. Moreover, contrary to the case of avalanche detectors and p-i-n diodes, the amplified photoresponse is enhanced rather than suppressed with increasing temperature. These distinctive characteristics lead us to hypothesize that the inelastic scattering between energetic electrons (holes) and the ionized impurities in the depletion and charge neutral regions of the p-n junction in a cyclic manner plays a significant role in the amplification process. Such an internal signal amplification mechanism, which occurs at much lower bias than impact ionization and favors room temperature over cryogenic temperature, makes it promising for practical device applications.

The effect of metal-semiconductor contact on the transient photovoltaic characteristic of HgCdTe PV detector.

PubMed

Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

2013-01-01

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

Discovery of a photoresponse amplification mechanism in compensated PN junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yuchun; Rahman, Samia N.; Hall, David

2015-01-19

We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. Moreover, contrary to the case of avalanche detectors and p-i-n diodes, the amplified photoresponse is enhanced rather than suppressed with increasing temperature. These distinctive characteristics lead us to hypothesize that the inelastic scattering between energetic electrons (holes) and the ionized impurities in the depletion and charge neutral regions ofmore » the p-n junction in a cyclic manner plays a significant role in the amplification process. Such an internal signal amplification mechanism, which occurs at much lower bias than impact ionization and favors room temperature over cryogenic temperature, makes it promising for practical device applications.« less

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures

PubMed Central

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng

2018-01-01

Abstract 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits. PMID:29721428

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

PubMed

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, D.C.; Fox, R.J.

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, Dimitrios C.; Fox, Richard J.

1981-01-01

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

Graphene Josephson Junction Single Photon Detector

NASA Astrophysics Data System (ADS)

Walsh, Evan D.; Lee, Gil-Ho; Efetov, Dmitri K.; Heuck, Mikkel; Crossno, Jesse; Taniguchi, Takashi; Watanabe, Kenji; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

Single photon detectors (SPDs) have found use across a wide array of applications depending on the wavelength to which they are sensitive. Graphene, because of its linear, gapless dispersion near the Dirac point, has a flat, wide bandwidth absorption that can be enhanced to near 100 % through the use of resonant structures making it a promising candidate for broadband SPDs. Upon absorbing a photon in the optical to mid-infrared range, a small (~10 μm2) sheet of graphene at cryogenic temperatures can experience a significant increase in electronic temperature due to its extremely low heat capacity. At 1550 nm, for example, calculations show that the temperature could rise by as much as 500 %. This temperature increase could be detected with near perfect quantum efficiency by making the graphene the weak link in a Josephson junction (JJ). We present a theoretical model demonstrating that such a graphene JJ SPD could operate at the readily achievable temperature of 3 K with near zero dark count, sub-50 ps timing jitter, and sub-5 ns dead time and report on the progress toward experimentally realizing the device.

Theoretical performance of mid wavelength HgCdTe(1 0 0) heterostructure infrared detectors

NASA Astrophysics Data System (ADS)

Kopytko, M.

2017-11-01

The paper presents a theoretical study of the p+BpnN+ design based on HgCdTe(1 0 0) layers, which significantly improves the performance of detectors optimized for the mid-wave infrared spectral range. p+BpnN+ design combines the concept of a high impedance photoconductor with double layer hetero-junction device. Zero valence band offset approximation throughout the p+Bpn heterostructure allows flow of only minority holes generated in the absorber, what in a combination with n-N+ exclusion junction provides the Auger suppression. Modeling shows that by applying a low doping active layer, it is possible to achieve an order of magnitude lower dark current densities than those determined by ;Rule 07;. A key to its success is a reduction of Shockley-Read-Hall centers associated with native defects, residual impurities and misfit dislocations. Reduction of metal site vacancies below 1012 cm-3 and dislocation density to 105 cm-2 allow to achieve a background limited performance at 250 K. If the background radiation can be reduced, operation with a three- or four-stage thermo-electric-cooler may be possible.

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Laparoscopic laser soldering for repair of ureteropelvic junction obstruction in the porcine model.

PubMed

Shumalinsky, Dmitry; Lobik, Leonid; Cytron, Shmuel; Halpern, Marisa; Vasilyev, Tamar; Ravid, Avi; Katzir, Abraham

2004-03-01

Laparoscopic pyeloplasty is used for the repair of ureteropelvic junction (UPJ) obstruction. Our objective was to introduce laser soldering to this procedure. We developed a system based on a CO2 laser, an infrared detector, and two infrared transmitting optical fibers to obtain temperature-controlled laser soldering of cuts in tissues. The system was used for laparoscopic soldering of incisions in the kidneys of pigs. We carried out laparoscopic pyeloplasty successfully in a porcine model using fiberoptic laser soldering. Laparoscopic laser soldering was found to be faster than suturing. It was easier to use and provided watertight bonding. This technique will be useful in pyeloplasty as well as other laparoscopic surgical procedures.

Development FD-SOI MOSFET Amplifiers for Integrated Read-Out Circuit of Superconducting-Tunnel-Junction Single-Photon-Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiuchi, Kenji; et al.

We proposed a new high-resolution single-photon infrared spectrometer for search for radiative decay of cosmic neutrino background (CνB). The superconducting-tunnel-junctions(STJs) are used as a single-photon counting device. Each STJ consists of Nb/Al/Al xO y/Al/Nb layers, and their thicknesses are optimized for the operation temperature at 370 mK cooled by a 3He sorption refrigerator. Our STJs achieved the leak current 250 pA, and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio (S/N). FD-SOI MOSFETs can be operated at cryogenic temperature ofmore » 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a nonlinear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors is 0.4 mV, and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET-based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp is required to have a fast response (GBW ≥ 100 MHz), and it must have low power dissipation as compared to the cooling power of refrigerator.« less

Microluminometer chip and method to measure bioluminescence

DOEpatents

Simpson, Michael L [Knoxville, TN; Paulus, Michael J [Knoxville, TN; Sayler, Gary S [Blaine, TN; Applegate, Bruce M [West Lafayette, IN; Ripp, Steven A [Knoxville, TN

2008-05-13

An integrated microluminometer includes an integrated circuit chip having at least one n-well/p-substrate junction photodetector for converting light received into a photocurrent, and a detector on the chip for processing the photocurrent. A distributed electrode configuration including a plurality of spaced apart electrodes disposed on an active region of the photodetector is preferably used to raise efficiency.

Arrays of Nano Tunnel Junctions as Infrared Image Sensors

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong S.; Prokopuk, Nicholas

2006-01-01

Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.

Infrared power cells for satellite power conversion

NASA Technical Reports Server (NTRS)

Summers, Christopher J.

1991-01-01

An analytical investigation is performed to assess the feasibility of long-wavelength power converters for the direct conversion of IR radiation onto electrical power. Because theses devices need to operate between 5 and 30 um the only material system possible for this application is the HgCdTe system which is currently being developed for IR detectors. Thus solar cell and IR detector theories and technologies are combined. The following subject areas are covered: electronic and optical properties of HgCdTe alloys; optimum device geometry; junction theory; model calculation for homojunction power cell efficiency; and calculation for HgCdTe power cell and power beaming.

Dynamical theory of responsivity and response time of a high temperature superconductor photo-thermoelectrical bolometer

NASA Astrophysics Data System (ADS)

Kaila, M. M.

2002-11-01

Dynamical theory of responsivity and response time for an high temperature superconductor (HTSC) photo-thermoelectrical bolometer is analysed in this paper. There is a thermoelectric feedback (TEF) due to the heat transfer from the sensitive area (HTSC-BiSb thermojunction) towards the cold junction of the thermocouple. This is in addition to the normal electrothermal feedback (ETF) between the detector and the substrate, in a photoelectrical bolometer. The two legs of the thermocouple are connected in a parallel geometry configuration. It is seen that TEF can be used in combination with the ETF to enhance responsivity and response time of the detector.

Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

NASA Technical Reports Server (NTRS)

1972-01-01

High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

NASA Astrophysics Data System (ADS)

Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

2018-03-01

A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

Deep diode arrays for X-ray detection

NASA Technical Reports Server (NTRS)

Zemel, J. N.

1984-01-01

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

A junction-level optoelectronic characterization of etching-induced damage for third-generation HgCdTe infrared focal-plane array photodetectors

NASA Astrophysics Data System (ADS)

Wang, Peng; Wang, Yueming; Wu, Mingzai; Ye, Zhenhua

2018-06-01

Third-generation HgCdTe-based infrared focal plane arrays require high aspect ratio trenches with admissible etch induced damage at the surface and sidewalls for effectively isolating the pixels. In this paper, the high-density inductively coupled plasma enhanced reaction ion etching technique has been used for micro-mesa delineation of HgCdTe for third-generation infrared focal-plane array detectors. A nondestructive junction-level optoelectronic characterization method called laser beam induced current (LBIC) is used to evaluate the lateral junction extent of HgCdTe etch-induced damage scanning electron microscopy. It is found that the LBIC profiles exhibit evident double peaks and valleys phenomena. The lateral extent of etch induced mesa damage of ∼2.4 μm is obtained by comparing the LBIC profile and the scanning electron microscopy image of etched sample. This finding will guide us to nondestructively identify the distributions of the etching damages in large scale HgCdTe micro-mesa.

Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.

PubMed

Li, Yantao; Hu, Weida; Ye, Zhenhua; Chen, Yiyu; Chen, Xiaoshuang; Lu, Wei

2017-04-01

Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type Hg_1-xCd_xTe (x=0.22) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs.

Analysis of astronomical data from optical superconducting tunnel junctions

NASA Astrophysics Data System (ADS)

de Bruijne, J. H.; Reynolds, A. P.; Perryman, Michael A.; Favata, Fabio; Peacock, Anthony J.

2002-06-01

Currently operating optical superconducting tunnel junction (STJ) detectors, developed at the European Space Agency (ESA), can simultaneously measure the wavelength ((Delta) (gamma) equals 50 nm at 500 nm) and arrival time (to within approximately 5 microsecond(s) ) of individual photons in the range 310 to 720 nm with an efficiency of approximately 70%, and with count rates of the order of 5000 photons s-1 per junction. A number of STJs placed in an array format generates 4-D data: photon arrival time, energy, and array element (X,Y). Such STJ cameras are ideally suited for, e.g., high-time-resolution spectrally resolved monitoring of variable sources or low- resolution spectroscopy of faint extragalactic objects. The reduction of STJ data involves detector efficiency correction, atmospheric extinction correction, sky background subtraction, and, unlike that of data from CCD-based systems, a more complex energy calibration, barycentric arrival time correction, energy range selection, and time binning; these steps are, in many respects, analogous to procedures followed in high-energy astrophysics. We discuss these calibration steps in detail using a representative observation of the cataclysmic variable UZ Fornacis; these data were obtained with ESA's S-Cam2 6 X 6-pixel device. We furthermore discuss issues related to telescope pointing and guiding, differential atmospheric refraction, and atmosphere-induced image motion and image smearing (`seeing') in the focal plane. We also present a simple and effective recipe for extracting the evolution of atmospheric seeing with time from any science exposure and discuss a number of caveats in the interpretation of STJ-based time-binned data, such as light curves and hardness ratio plots.

Passive radon/thoron personal dosimeter using an electrostatic collector and a diffused-junction detector

NASA Astrophysics Data System (ADS)

Bigu, J.; Raz, R.

1985-01-01

A solid-state alpha dosimeter has been designed and tested suitable for personal and environmental radon/thoron monitoring. The dosimeter basically consists of an electrostatic collector and an alpha-particle counting system with spectroscopy capabilities. The sensitive volume (˜20 cm3) of the electrostatic collector consists of a cylindrically shaped metal wire screen and a diffused-junction silicon alpha-detector covered with a thin aluminized Mylar sheet. A dc voltage (˜500 V) is applied between the wire screen and the Mylar sheet, with the latter held at negative potential relative to the former. Data can be retrieved during or after sampling by means of a microcomputer (Epson HX20) via a RS-232 communication interface unit. The dosimeter has been calibrated in a large (26 m3) radon/thoron test facility. A linear relationship was found between the dosimeter's alpha-count and both radon gas concentration and radon daughter working level. The dosimeter is mounted on top of an ordinary miner's cap lamp battery and is ideally suited for personal monitoring in underground uranium mines and other working areas. The dosimeter presented here is a considerably improved version of an earlier prototype.

Frequency-tuned microwave photon counter based on a superconductive quantum interferometer

NASA Astrophysics Data System (ADS)

Shnyrkov, V. I.; Yangcao, Wu; Soroka, A. A.; Turutanov, O. G.; Lyakhno, V. Yu.

2018-03-01

Various types of single-photon counters operating in infrared, ultraviolet, and optical wavelength ranges are successfully used to study electromagnetic fields, analyze radiation sources, and solve problems in quantum informatics. However, their operating principles become ineffective at millimeter band, S-band, and ultra-high frequency bands of wavelengths due to the decrease in quantum energy by 4-5 orders of magnitude. Josephson circuits with discrete Hamiltonians and qubits are a good foundation for the construction of single-photon counters at these frequencies. This paper presents a frequency-tuned microwave photon counter based on a single-junction superconducting quantum interferometer and flux qutrit. The control pulse converts the interferometer into a two-level system for resonance absorption of photons. Decay of the photon-induced excited state changes the magnetic flux in the interferometer, which is measured by a SQUID magnetometer. Schemes for recording the magnetic flux using a DC SQUID or ideal parametric detector, based on a qutrit with high-frequency excitation, are discussed. It is shown that the counter consisting of an interferometer with a Josephson junction and a parametric detector demonstrates high performance and is capable of detecting single photons in a microwave band.

Cryogen-free cryostat for large-scale arrays of superconducting tunnel junction ion detectors in time-of-flight mass spectrometry

NASA Astrophysics Data System (ADS)

Kushino, A.; Ohkubo, M.; Chen, Y. E.; Ukibe, M.; Kasai, S.; Fujioka, K.

2006-04-01

Nb-based superconducting tunnel junction (STJ) detectors have a fast time resolution of a few 100 ns and high operating temperature of 0.3 K. These advantages expand their applicable fields to time-of-flight mass spectrometry (TOF-MS). In order to enlarge effective detection area, we have built arrays based on hundreds of large STJ elements. To realize the fast readout and no-cross talk, coaxial cables made of low-thermal conductivity materials were investigated. From results of thermal conduction measurements, we chose thin coaxial cables with a diameter of 0.33 mm, consisting of CuNi center/outer conductors and Teflon insulator for the wiring between 0.3 K- 3He pot of the sorption pump and 3 K-2nd stage of GM cooler. Even after the installation of coaxial cables and a cold snout to the cryogen-free cryostat, we could keep arrays at 0.3 K for about a week, and reduction of the holding time at 0.3 K and temperature rise at 3He pot due to the installation were small, ˜0.5 day and 10 mK, respectively.

Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements

NASA Astrophysics Data System (ADS)

Jackson, John C.; Phelan, Don; Morrison, Alan P.; Redfern, R. Michael; Mathewson, Alan

2002-05-01

Geiger mode avalanche photodiodes (APD) can be biased above the breakdown voltage to allow detection of single photons. Because of the increase in quantum efficiency, magnetic field immunity, robustness, longer operating lifetime and reduction in costs, solid-state detectors capable of operating at non-cryogenic temperatures and providing single photon detection capabilities provide attractive alternatives to the photomultiplier tube (PMT). Shallow junction Geiger mode APD detectors provide the ability to manufacture photon detectors and detector arrays with CMOS compatible processing steps and allows the use of novel Silicon-on-Insulator(SoI) technology to provide future integrated sensing solutions. Previous work on Geiger mode APD detectors has focused on increasing the active area of the detector to make it more PMT like, easing the integration of discrete reaction, detection and signal processing into laboratory experimental systems. This discrete model for single photon detection works well for laboratory sized test and measurement equipment, however the move towards microfluidics and systems on a chip requires integrated sensing solutions. As we move towards providing integrated functionality of increasingly nanoscopic sized emissions, small area detectors and detector arrays that can be easily integrated into marketable systems, with sensitive small area single photon counting detectors will be needed. This paper will demonstrate the 2-dimensional and 3-dimensional simulation of optical coupling that occurs in Geiger mode APDs. Fabricated Geiger mode APD detectors optimized for fluorescence decay measurements were characterized and preliminary results show excellent results for their integration into fluorescence decay measurement systems.

Phase-locking transition in a chirped superconducting Josephson resonator.

PubMed

Naaman, O; Aumentado, J; Friedland, L; Wurtele, J S; Siddiqi, I

2008-09-12

We observe a sharp threshold for dynamic phase locking in a high-Q transmission line resonator embedded with a Josephson tunnel junction, and driven with a purely ac, chirped microwave signal. When the drive amplitude is below a critical value, which depends on the chirp rate and is sensitive to the junction critical current I0, the resonator is only excited near its linear resonance frequency. For a larger amplitude, the resonator phase locks to the chirped drive and its amplitude grows until a deterministic maximum is reached. Near threshold, the oscillator evolves smoothly in one of two diverging trajectories, providing a way to discriminate small changes in I0 with a nonswitching detector, with potential applications in quantum state measurement.

Solar energy conversion through the interaction of plasmons with tunnel junctions. Part A: Solar cell analysis. Part B: Photoconductor analysis

NASA Technical Reports Server (NTRS)

Welsh, P. E.; Schwartz, R. J.

1988-01-01

A solar cell utilizing guided optical waves and tunnel junctions was analyzed to determine its feasibility. From this analysis, it appears that the limits imposed upon conventional multiple cell systems also limit this solar cell. Due to this limitation, it appears that the relative simplicity of the conventional multiple cell systems over the solar cell make the conventional multiple cell systems the more promising candidate for improvement. It was discovered that some superlattice structures studied could be incorporated into an infrared photodetector. This photoconductor appears to be promising as a high speed, sensitive (high D sup star sub BLIP) detector in the wavelength range from 15 to over 100 micrometers.

Radiation hard blocked tunneling band {GaAs}/{AlGaAs} superlattice long wavelength infrared detectors

NASA Astrophysics Data System (ADS)

Wu, C. S.; Wen, C. P.; Reiner, P.; Tu, C. W.; Hou, H. Q.

1996-09-01

We have developed a novel multiple quantum well (MQW) long wavelength infrared (LWIR) detector which can operate in a photovoltaic detection mode with an intrinsic event discrimination (IED) capability. The detector was constructed using the {GaAs}/{AlGaAs} MQW technology to form a blocked tunneling band superlattice structure with a 10.2 micron wavelength and 2.2 micron bandwidth. The detector exhibited Schottky junction and photovoltaic detection characteristics with extremely low dark current and low noise as a result of a built-in tunneling current blocking layer structure. In order to enhance quantum efficiency, a built-in electric field was created by grading the doping concentration of each quantum well in the MQW region. The peak responsivity of the detector was 0.4 amps/W with a measured detectivity of 6.0 × 10 11 Jones. The external quantum efficiency was measured to be 4.4%. The detector demonstrated an excellent intrinsic event discrimination capability due to the presence of a p-type GaAs hole collector layer, which was grown on top of the n-type electron emitter region of the MQW detector. The best results show that an infrared signal which is as much as 100 times smaller than coincident nuclear radiation induced current can be distinguished and extracted from the noise signal. With this hole collector structure, our detector also demonstrated two-color detection.

Experimental study of the spatially-modulated light detector

NASA Astrophysics Data System (ADS)

Coppée, Daniël; Pan, Wei; Stiens, Johan; Vounckx, Roger; Kuijk, Maarten

1999-03-01

Usually, integrated detectors in CMOS exhibit long recovery times, limiting the detector bandwidth to only a few MHz. This is due to the long absorption length and the slow diffusion speed of photo-generated carriers. Different approaches have been proposed to solve these problems hereby taxing the compatibility with standard CMOS fabrication processing. We present a novel detector for high-speed light detection in standard CMOS. To solve the problem of slow CMOS-detector recovery, the incident light is spatially modulated and the spatially modulated component of the photo-generated carrier distribution is measured. Though only a single light input signal is required, from the detector on, analog signal processing can be achieved fully differentially. Subsequently, expected good PSRR (Power supply rejection ratio) allows integration with digital circuits. Avoiding hybridization eliminates the conventional problems caused by bonding-pad capacitance, bonding-wire inductance. This reduces the associated signal degradation. In addition, the very low detector capacitance, due to the low effectively used detector area and the low area capacitance of the n-well junction, yields high voltage readout of the detector. This facilitates further amplification and conversion to digital signal levels. The detector will be applicable in arrays due to expected low cross talk. The expected fields of operation involve: serial and parallel optical communication receivers (e.g. for WDM), DVD-reading heads with integrated amplifier, etc. First measurements show 200 Mbit/s operation with a detector-responsivity of 0.05 A/W at λ=860 nm and 0.132 A/W at λ=635 nm. The detector has inherently a low capacitance, in this case only 50 fF (for an effective detector area of 70×70 μm 2).

Microwave SQUID Multiplexer for the Readout of Metallic Magnetic Calorimeters

NASA Astrophysics Data System (ADS)

Kempf, S.; Gastaldo, L.; Fleischmann, A.; Enss, C.

2014-06-01

We have realized a frequency-domain multiplexing technique for the readout of large metallic magnetic calorimeter detector arrays. It is based on non-hysteretic single-junction SQUIDs and allows for a simultaneous readout of hundreds or thousands of detectors by using a single cryogenic high electron mobility transistor amplifier and two coaxial cables that are routed from room-temperature to the detector array. We discuss the working principle of the multiplexer and present details about our prototype multiplexer design. We show that fabricated devices are fully operational and that characteristic SQUID parameters such as the input sensitivity of the SQUID or the resonance frequency of the readout circuit can be predicted with confidence. Our best device so far has shown a magnetic flux white noise level of 1.4 m which can in future be reduced by an optimization of the fabrication processes as well as an improved microwave readout system.

Spin-torque resonant expulsion of the vortex core for an efficient radiofrequency detection scheme.

PubMed

Jenkins, A S; Lebrun, R; Grimaldi, E; Tsunegi, S; Bortolotti, P; Kubota, H; Yakushiji, K; Fukushima, A; de Loubens, G; Klein, O; Yuasa, S; Cros, V

2016-04-01

It has been proposed that high-frequency detectors based on the so-called spin-torque diode effect in spin transfer oscillators could eventually replace conventional Schottky diodes due to their nanoscale size, frequency tunability and large output sensitivity. Although a promising candidate for information and communications technology applications, the output voltage generated from this effect has still to be improved and, more pertinently, reduces drastically with decreasing radiofrequency (RF) current. Here we present a scheme for a new type of spintronics-based high-frequency detector based on the expulsion of the vortex core in a magnetic tunnel junction (MTJ). The resonant expulsion of the core leads to a large and sharp change in resistance associated with the difference in magnetoresistance between the vortex ground state and the final C-state configuration. Interestingly, this reversible effect is independent of the incoming RF current amplitude, offering a fast real-time RF threshold detector.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1984-02-24

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

32-element beta detector developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Yakushev, Alexander; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

2014-08-01

The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

Edge detection and localization with edge pattern analysis and inflection characterization

NASA Astrophysics Data System (ADS)

Jiang, Bo

2012-05-01

In general edges are considered to be abrupt changes or discontinuities in two dimensional image signal intensity distributions. The accuracy of front-end edge detection methods in image processing impacts the eventual success of higher level pattern analysis downstream. To generalize edge detectors designed from a simple ideal step function model to real distortions in natural images, research on one dimensional edge pattern analysis to improve the accuracy of edge detection and localization proposes an edge detection algorithm, which is composed by three basic edge patterns, such as ramp, impulse, and step. After mathematical analysis, general rules for edge representation based upon the classification of edge types into three categories-ramp, impulse, and step (RIS) are developed to reduce detection and localization errors, especially reducing "double edge" effect that is one important drawback to the derivative method. But, when applying one dimensional edge pattern in two dimensional image processing, a new issue is naturally raised that the edge detector should correct marking inflections or junctions of edges. Research on human visual perception of objects and information theory pointed out that a pattern lexicon of "inflection micro-patterns" has larger information than a straight line. Also, research on scene perception gave an idea that contours have larger information are more important factor to determine the success of scene categorization. Therefore, inflections or junctions are extremely useful features, whose accurate description and reconstruction are significant in solving correspondence problems in computer vision. Therefore, aside from adoption of edge pattern analysis, inflection or junction characterization is also utilized to extend traditional derivative edge detection algorithm. Experiments were conducted to test my propositions about edge detection and localization accuracy improvements. The results support the idea that these edge detection method improvements are effective in enhancing the accuracy of edge detection and localization.

On-line focusing of flavin derivatives using Dynamic pH junction-sweeping capillary electrophoresis with laser-induced fluorescence detection.

PubMed

Britz-McKibbin, Philip; Otsuka, Koji; Terabe, Shigeru

2002-08-01

Simple yet effective methods to enhance concentration sensitivity is needed for capillary electrophoresis (CE) to become a practical method to analyze trace levels of analytes in real samples. In this report, the development of a novel on-line preconcentration technique combining dynamic pH junction and sweeping modes of focusing is applied to the sensitive and selective analysis of three flavin derivatives: riboflavin, flavin mononucleotide (FMN) and flavin adenine dinucleotide (FAD). Picomolar (pM) detectability of flavins by CE with laser-induced fluorescence (LIF) detection is demonstrated through effective focusing of large sample volumes (up to 22% capillary length) using a dual pH junction-sweeping focusing mode. This results in greater than a 1,200-fold improvement in sensitivity relative to conventional injection methods, giving a limit of detection (S/N = 3) of approximately 4.0 pM for FAD and FMN. Flavin focusing is examined in terms of analyte mobility dependence on buffer pH, borate complexation and SDS interaction. Dynamic pH junction-sweeping extends on-line focusing to both neutral (hydrophobic) and weakly acidic (hydrophilic) species and is considered useful in cases when either conventional sweeping or dynamic pH junction techniques used alone are less effective for certain classes of analytes. Enhanced focusing performance by this hyphenated method was demonstrated by greater than a 4-fold reduction in flavin bandwidth, as compared to either sweeping or dynamic pH junction, reflected by analyte detector bandwidths <0.20 cm. Novel on-line focusing strategies are required to improve sensitivity in CE, which may be applied toward more effective biochemical analysis methods for diverse types of analytes.

Monolithic pattern-sensitive detector

DOEpatents

Berger, Kurt W.

2000-01-01

Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

Temperature dependence of a superconducting tunnel junction x-ray detector

NASA Astrophysics Data System (ADS)

Hiller, Lawrence J.; Labov, Simon E.; Mears, Carl A.; Barfknecht, Andrew T.; Frank, Matthias A.; Netel, Harrie; Lindeman, Mark A.

1995-09-01

Superconducting tunnel junctions can be used as part of a high-resolution, energy-dispersive x- ray detector. The energy of the absorbed x ray is used to break superconducting electron pairs, producing on the order of 10(superscript 6) excitations, called quasiparticles. The number of quasiparticles produced is proportional to the energy of the absorbed x ray. When a bias voltage is maintained across the barrier, these quasiparticles produce a net tunneling current. Either the peak tunneling current or the total tunneled charge may be measured to determine the energy of the absorbed x ray. The tunneling rate, and therefore the signal, is enhanced by the use of a quasiparticle trap near the tunnel barrier. The trapping efficiency is improved by decreasing the energy gap, though this reduces the maximum temperature at which the device may operate. In our niobium/aluminum configuration, we can very the energy gap in the trapping layer by varying its thickness. This paper examines the performance of two devices with 50 nm aluminum traps at temperatures ranging from 100 mK to 700 mK. We found that this device has a very good energy resolution of about 12 eV FWHM at 1 keV. This energy resolution is independent of temperature for much of this temperature range.

Method of fabricating multiwavelength infrared focal plane array detector

NASA Technical Reports Server (NTRS)

Forrest, Stephen R. (Inventor); Olsen, Gregory H. (Inventor); Kim, Dong-Su (Inventor); Lange, Michael J. (Inventor)

1996-01-01

A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y.ltoreq.1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

Multiwavelength infrared focal plane array detector

NASA Technical Reports Server (NTRS)

Forrest, Stephen R. (Inventor); Olsen, Gregory H. (Inventor); Kim, Dong-Su (Inventor); Lange, Michael J. (Inventor)

1995-01-01

A multiwavelength focal plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y<1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Development of a portable thermal neutron detector based on a boron rich heterodiode

NASA Astrophysics Data System (ADS)

Tomov, R.; Venn, R.; Owens, A.; Peacock, A.

2008-10-01

Results are presented on the development of a portable detector suitable for detection of individual thermal neutrons. The device is based on direct absorption of neutrons in an absorber film containing 10B. The resultant charge arising from the capture products is detected by a p-n junction partly formed from this absorber and internal to the device. When a small bias voltage is applied (typically a few volts) a current pulse is observed due to the movement of this charge in the electric field of the p-n junction. For each detected neutron the charge pulse height, rise time and time of detection are recorded. Device performance, in terms of efficiency and spectral response, is explored as a function of neutron absorber thickness, geometry and overall diode electrical characteristics and validated against neutron source measurements at the UK National Physical Laboratory (NPL). The diodes have a natural background suppression capability through traditional pulse height and pulse rise time discrimination. The manufacturing process permits fabrication of arrays of diodes, with typical areas of ~15 mm2, thus increasing the collecting area and the signal to noise ratio, albeit with increased readout complexity. The associated multi-channel readout electronics is standard, however, and commonly used in existing X-ray sensors. Simple portable sensors based on these heterodiodes are expected to have applications in the detection of nuclear materials in a variety of security related situations.

Enhancement of phonon backscattering due to confinement of ballistic phonon pathways in silicon as studied with a microfabricated phonon spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Otelaja, O. O.; Robinson, R. D., E-mail: rdr82@cornell.edu

2015-10-26

In this work, the mechanism for enhanced phonon backscattering in silicon is investigated. An understanding of phonon propagation through substrates has implications for engineering heat flow at the nanoscale, for understanding sources of decoherence in quantum systems, and for realizing efficient phonon-mediated particle detectors. In these systems, phonons that backscatter from the bottom of substrates, within the crystal or from interfaces, often contribute to the overall detector signal. We utilize a microscale phonon spectrometer, comprising superconducting tunnel junction emitters and detectors, to specifically probe phonon backscattering in silicon substrates (∼500 μm thick). By etching phonon “enhancers” or deep trenches (∼90 μm) aroundmore » the detectors, we show that the backscattered signal level increases by a factor of ∼2 for two enhancers versus one enhancer. Using a geometric analysis of the phonon pathways, we show that the mechanism of the backscattered phonon enhancement is due to confinement of the ballistic phonon pathways and increased scattering off the enhancer walls. Our result is applicable to the geometric design and patterning of substrates that are employed in phonon-mediated detection devices.« less

Neural dynamics of 3-D surface perception: figure-ground separation and lightness perception.

PubMed

Kelly, F; Grossberg, S

2000-11-01

This article develops the FACADE theory of three-dimensional (3-D) vision to simulate data concerning how two-dimensional pictures give rise to 3-D percepts of occluded and occluding surfaces. The theory suggests how geometrical and contrastive properties of an image can either cooperate or compete when forming the boundary and surface representations that subserve conscious visual percepts. Spatially long-range cooperation and short-range competition work together to separate boundaries of occluding figures from their occluded neighbors, thereby providing sensitivity to T-junctions without the need to assume that T-junction "detectors" exist. Both boundary and surface representations of occluded objects may be amodally completed, whereas the surface representations of unoccluded objects become visible through modal processes. Computer simulations include Bregman-Kanizsa figure-ground separation, Kanizsa stratification, and various lightness percepts, including the Münker-White, Benary cross, and checkerboard percepts.

Recent advances in superconducting-mixer simulations

NASA Technical Reports Server (NTRS)

Withington, S.; Kennedy, P. R.

1992-01-01

Over the last few years, considerable progress have been made in the development of techniques for fabricating high-quality superconducting circuits, and this success, together with major advances in the theoretical understanding of quantum detection and mixing at millimeter and submillimeter wavelengths, has made the development of CAD techniques for superconducting nonlinear circuits an important new enterprise. For example, arrays of quasioptical mixers are now being manufactured, where the antennas, matching networks, filters and superconducting tunnel junctions are all fabricated by depositing niobium and a variety of oxides on a single quartz substrate. There are no adjustable tuning elements on these integrated circuits, and therefore, one must be able to predict their electrical behavior precisely. This requirement, together with a general interest in the generic behavior of devices such as direct detectors and harmonic mixers, has lead us to develop a range of CAD tools for simulating the large-signal, small-signal, and noise behavior of superconducting tunnel junction circuits.

High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

PubMed

Chen, Yan; Wang, Xudong; Wu, Guangjian; Wang, Zhen; Fang, Hehai; Lin, Tie; Sun, Shuo; Shen, Hong; Hu, Weida; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-03-01

Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe 2 /MoS 2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 5 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W -1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Physics of Superconducting Microwave Resonators

NASA Astrophysics Data System (ADS)

Gao, Jiansong

Over the past decade, low temperature detectors have brought astronomers revolutionary new observational capabilities and led to many great discoveries. Although a single low temperature detector has very impressive sensitivity, a large detector array would be much more powerful and are highly demanded for the study of more difficult and fundamental problems in astronomy. However, current detector technologies, such as transition edge sensors and superconducting tunnel junction detectors, are difficult to integrate into a large array. The microwave kinetic inductance detector (MKID) is a promising new detector technology invented at Caltech and JPL which provides both high sensitivity and an easy solution to the detector integration. It senses the change in the surface impedance of a superconductor as incoming photons break Cooper pairs, by using high-Q superconducting microwave resonators capacitively coupled to a common feedline. This architecture allows thousands of detectors to be easily integrated through passive frequency domain multiplexing. In this thesis, we explore the rich and interesting physics behind these superconducting microwave resonators. The first part of the thesis discusses the surface impedance of a superconductor, the kinetic inductance of a superconducting coplanar waveguide, and the circuit response of a resonator. These topics are related with the responsivity of MKIDs. The second part presents the study of the excess frequency noise that is universally observed in these resonators. The properties of the excess noise, including power, temperature, material, and geometry dependence, have been quantified. The noise source has been identified to be the two-level systems in the dielectric material on the surface of the resonator. A semi-empirical noise model has been developed to explain the power and geometry dependence of the noise, which is useful to predict the noise for a specified resonator geometry. The detailed physical noise mechanism, however, is still not clear. With the theoretical results of the responsivity and the semi-empirical noise model established in this thesis, a prediction of the detector sensitivity (noise equivalent power) and an optimization of the detector design are now possible.

Parylene supported 20um*20um uncooled thermoelectric infrared detector with high fill factor

NASA Astrophysics Data System (ADS)

Modarres-Zadeh, Mohammad J.; Carpenter, Zachary S.; Rockley, Mark G.; Abdolvand, Reza

2012-06-01

Presented is a novel design for an uncooled surface-micromachined thermoelectric (TE) infrared (IR) detector. The detector features a P-doped polysilicon/Nichrome (Cr20-Ni80) thermocouple, which is embedded into a thin layer of Parylene-N to provide structural support. The low thermal conductivity (~0.1W/m.K), chemical resistance, and ease of deposition/patterning of Parylene-N make it an excellent choice of material for use in MEMS thermal detectors. This detector also features an umbrella-like IR absorber composed of a three layer stack of NiCr/SiN/NiCr to optimize IR absorption. The total device area is 20 um * 20 um per pixel with an absorber area of ~19 um * 19 um resulting in a fill factor of 90%. At room temperature, a DC responsivity of ~170V/W with a rise time of less than 8 ms is measured from the fabricated devices in vacuum when viewing a 500K blackbody without any concentrating optics. The dominant source of noise in thermoelectric IR detectors is typically Johnson noise when the detectors are operating in an open circuit condition. The fabricated detectors have resistances about 85KOhm which results in Johnson noise of about 38nV/Hz^0.5. The D* is calculated to be 9 * 106 cm*Hz0.5/ W. Preliminary finite element analysis indicates that the thermal conduction from the hot junction to the substrate through the TE wires is dominant ( GTE >> Gparylene) considering the fabricated dimensions of the parylene film and the TE wires. Thus, by further reducing the size of the TE wires, GTE can be decreased and hence, responsivity can be improved while the parylene film sustains the structural integrity of the cell.

III-V Compound Detectors for CO2 DIAL Measurements

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Ismail, Syed; Singh, Upendra N.

2005-01-01

Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

Carbon-Nanotube Schottky Diodes

NASA Technical Reports Server (NTRS)

Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

2006-01-01

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Simulation of solidification in a Bridgman cell

NASA Technical Reports Server (NTRS)

Dakhoul, Y. M.; Farmer, R. C.

1984-01-01

Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quality infrared detector and junction device materials. However, crystal imperfections and interface shapes still must be controlled through modification of the temperature and concentration gradients created during solidification. The objective of this investigation was to study the temperature fields generated by various cell and heatpipe configurations and operating conditions. Continuum's numerical model of the temperature, species concentrations, and velocity fields was used to describe the thermal characteristics of Bridgman cell operation.

Superconducting Oxide Films for Multispectral Infrared Sensors

DTIC Science & Technology

1989-02-07

films of both low - and high-temperature supercon- resistances below our measurement sensitivity of 4x 10-10 ductors, including BaPb,-Bi2 O.,’ NbN /BN, 2...Simon, " NbN /BN Granular Films - A states, such as normal metal barriers, will improve the noise Sensitive, High-Speed Detector For Pulsed Far- Infrared ...A. W. Kleinsasser, and R. L Sandstrom, "Electron Trap States and Low Frequency Noise in Tunnel Summary and Conclusions Junctions", IREE Trans. nMa n

Graphene bolometer with thermoelectric readout and capacitive coupling to an antenna

NASA Astrophysics Data System (ADS)

Skoblin, Grigory; Sun, Jie; Yurgens, August

2018-02-01

We report on a prototype graphene radiation detector based on the thermoelectric effect. We used a split top gate to create a p-n junction in the graphene, thereby making an effective thermocouple to read out the electronic temperature in the graphene. The electronic temperature is increased due to the AC currents induced in the graphene from the incoming radiation, which is first received by an antenna and then directed to the graphene via the top-gate capacitance. With the exception of the constant DC voltages applied to the gate, the detector does not need any bias and is therefore very simple to use. The measurements showed a clear response to microwaves at 94 GHz with the signal being almost temperature independent in the 4-100 K temperature range. The optical responsivity reached ˜700 V/W.

Dynamic Electrothermal Model of a Sputtered Thermopile Thermal Radiation Detector for Earth Radiation Budget Applications

NASA Technical Reports Server (NTRS)

Weckmann, Stephanie

1997-01-01

The Clouds and the Earth's Radiant Energy System (CERES) is a program sponsored by the National Aeronautics and Space Administration (NASA) aimed at evaluating the global energy balance. Current scanning radiometers used for CERES consist of thin-film thermistor bolometers viewing the Earth through a Cassegrain telescope. The Thermal Radiation Group, a laboratory in the Department of Mechanical Engineering at Virginia Polytechnic Institute and State University, is currently studying a new sensor concept to replace the current bolometer: a thermopile thermal radiation detector. This next-generation detector would consist of a thermal sensor array made of thermocouple junction pairs, or thermopiles. The objective of the current research is to perform a thermal analysis of the thermopile. Numerical thermal models are particularly suited to solve problems for which temperature is the dominant mechanism of the operation of the device (through the thermoelectric effect), as well as for complex geometries composed of numerous different materials. Feasibility and design specifications are studied by developing a dynamic electrothermal model of the thermopile using the finite element method. A commercial finite element-modeling package, ALGOR, is used.

Complementary Barrier Infrared Detector (CBIRD) Contact Methods

NASA Technical Reports Server (NTRS)

Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

2013-01-01

The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

RF Single Electron Transistor Readout Amplifiers for Superconducting Astronomical Detectors for X-Ray to Sub-mm Wavelengths

NASA Technical Reports Server (NTRS)

Stevenson, Thomas; Aassime, Abdelhanin; Delsing, Per; Frunzio, Luigi; Li, Li-Qun; Prober, Daniel; Schoelkopf, Robert; Segall, Ken; Wilson, Chris; Stahle, Carl

2000-01-01

We report progress on using a new type of amplifier, the Radio-Frequency Single-Electron Transistor (RF-SET), to develop multi-channel sensor readout systems for fast and sensitive readout of high impedance cryogenic photodetectors such as Superconducting Tunnel Junctions and Single Quasiparticle Photon Counters. Although cryogenic, these detectors are desirable because of capabilities not other-wise attainable. However, high impedances and low output levels make low-noise, high-speed readouts challenging, and large format arrays would be facilitated by compact, low-power, on-chip integrated amplifiers. Well-suited for this application are RF-SETs, very high performance electrometers which use an rf readout technique to provide 100 MHz bandwidth. Small size, low power, and cryogenic operation allow direct integration with detectors, and using multiple rf carrier frequencies permits simultaneous readout of 20-50 amplifiers with a common electrical connection. We describe both the first 2-channel demonstration of this wavelength division multiplexing technique for RF-SETs, and Charge-Locked-Loop operation with 100 kHz of closed-loop bandwidth.

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

NASA Astrophysics Data System (ADS)

Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

2004-06-01

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

NASA Astrophysics Data System (ADS)

Varlamava, Volha; De Amicis, Giovanni; Del Monte, Andrea; Perticaroli, Stefano; Rao, Rosario; Palma, Fabrizio

2016-08-01

In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.

Error sources affecting thermocouple thermometry in RF electromagnetic fields.

PubMed

Chakraborty, D P; Brezovich, I A

1982-03-01

Thermocouple thermometry errors in radiofrequency (typically 13, 56 MHZ) electromagnetic fields such as are encountered in hyperthermia are described. RF currents capacitatively or inductively coupled into the thermocouple-detector circuit produce errors which are a combination of interference, i.e., 'pick-up' error, and genuine rf induced temperature changes at the junction of the thermocouple. The former can be eliminated by adequate filtering and shielding; the latter is due to (a) junction current heating in which the generally unequal resistances of the thermocouple wires cause a net current flow from the higher to the lower resistance wire across the junction, (b) heating in the surrounding resistive material (tissue in hyperthermia), and (c) eddy current heating of the thermocouple wires in the oscillating magnetic field. Low frequency theories are used to estimate these errors under given operating conditions and relevant experiments demonstrating these effects and precautions necessary to minimize the errors are described. It is shown that at 13.56 MHz and voltage levels below 100 V rms these errors do not exceed 0.1 degrees C if the precautions are observed and thermocouples with adequate insulation (e.g., Bailey IT-18) are used. Results of this study are being currently used in our clinical work with good success.

Microwave amplification based on quasiparticle SIS up and down frequency converters

NASA Astrophysics Data System (ADS)

Kojima, T.; Uzawa, Y.; Shan, W.

2018-02-01

Heterodyne instruments have recently attained quantum-limited low-noise performance, particularly in radio astronomy, but it is difficult to develop large heterodyne arrays such as a modern radio camera using cryogenic sensitive detectors based on microwave kinetic inductance detectors, transition edge sensors, etc. In the realization of the heterodyne array, the reduction of power dissipation for semiconductor-based amplifiers remains a major challenge. Alternatively, superconducting parametric amplifiers still seem to have several barriers to application, especially in terms of operating temperature. Here, we show a novel concept of microwave amplification based on up and down frequency-conversion processes using quasiparticle superconductor-insulator-superconductor (SIS) tunnel junctions. We demonstrate positive gain using a proof-of-concept test module, which operates with a power dissipation of several μW at a bath temperature of 4 K. The performance of the module suggests great potential for application in large arrays.

Stochastic resonance-enhanced laser-based particle detector.

PubMed

Dutta, A; Werner, C

2009-01-01

This paper presents a Laser-based particle detector whose response was enhanced by modulating the Laser diode with a white-noise generator. A Laser sheet was generated to cast a shadow of the object on a 200 dots per inch, 512 x 1 pixels linear sensor array. The Laser diode was modulated with a white-noise generator to achieve stochastic resonance. The white-noise generator essentially amplified the wide-bandwidth (several hundred MHz) noise produced by a reverse-biased zener diode operating in junction-breakdown mode. The gain in the amplifier in the white-noise generator was set such that the Receiver Operating Characteristics plot provided the best discriminability. A monofiber 40 AWG (approximately 80 microm) wire was detected with approximately 88% True Positive rate and approximately 19% False Positive rate in presence of white-noise modulation and with approximately 71% True Positive rate and approximately 15% False Positive rate in absence of white-noise modulation.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

2018-04-01

This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

Microwave Photon Detector in Circuit QED

NASA Astrophysics Data System (ADS)

Garcia-Ripoll, Juan Jose; Romero, Guillermo; Solano, Enrique

2009-03-01

In this work we propose a design for a microwave photodetector based on elements from circuit QED such as the ones used in qubit designs. Our proposal consists on a microwave guide in which we embed circuital elements that can absorb photons and irreversibly change state. These incoherent absorption processes constitute the measurement itself. We first model this design using a general master equation for the propagating photons and the absorbing elements. We find that the detection efficiency for a single absorber is limited to 50%, and that this efficiency can be quickly increased by adding more elements with a moderate separation, obtaining 80% and 90% for two and three absorbers. Our abstract design has at least one possible implementation in which the absorbers are current biased Josephson junction. We demonstrate that the coupling between the guide and the junctions is strong enough, irrespectively of the microwave guide size, and derivate realistic parameters for high fidelity operation with current experiments. Patent pending No. 200802933, Oficina Espanola de Patentes y Marcas, 17/10/2008.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

Operation and Applications of the Boron Cathodic Arc Ion Source

NASA Astrophysics Data System (ADS)

Williams, J. M.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.; Freeman, J. H.

2008-11-01

The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.

Remote Entanglement by Coherent Multiplication of Concurrent Quantum Signals

NASA Astrophysics Data System (ADS)

Roy, Ananda; Jiang, Liang; Stone, A. Douglas; Devoret, Michel

2015-10-01

Concurrent remote entanglement of distant, noninteracting quantum entities is a crucial function for quantum information processing. In contrast with the existing protocols which employ the addition of signals to generate entanglement between two remote qubits, the continuous variable protocol we present is based on the multiplication of signals. This protocol can be straightforwardly implemented by a novel Josephson junction mixing circuit. Our scheme would be able to generate provable entanglement even in the presence of practical imperfections: finite quantum efficiency of detectors and undesired photon loss in current state-of-the-art devices.

Imaging of current distributions in superconducting thin film structures

NASA Astrophysics Data System (ADS)

Dönitz, Dietmar

2006-10-01

Local analysis plays an important role in many fields of scientific research. However, imaging methods are not very common in the investigation of superconductors. For more than 20 years, Low Temperature Scanning Electron Microscopy (LTSEM) has been successfully used at the University of Tübingen for studying of condensed matter phenomena, especially of superconductivity. In this thesis LTSEM was used for imaging current distributions in different superconducting thin film structures: - Imaging of current distributions in Josephson junctions with ferromagnetic interlayer, also known as SIFS junctions, showed inhomogeneous current transport over the junctions which directly led to an improvement in the fabrication process. An investigation of improved samples showed a very homogeneous current distribution without any trace of magnetic domains. Either such domains were not present or too small for imaging with the LTSEM. - An investigation of Nb/YBCO zigzag Josephson junctions yielded important information on signal formation in the LTSEM both for Josephson junctions in the short and in the long limit. Using a reference junction our signal formation model could be verified, thus confirming earlier results on short zigzag junctions. These results, which could be reproduced in this work, support the theory of d-wave symmetry in the superconducting order parameter of YBCO. Furthermore, investigations of the quasiparticle tunneling in the zigzag junctions showed the existence of Andreev bound states, which is another indication of the d-wave symmetry in YBCO. - The LTSEM study of Hot Electron Bolometers (HEB) allowed the first successful imaging of a stable 'Hot Spot', a self-heating region in HEB structures. Moreover, the electron beam was used to induce an - otherwise unstable - hot spot. Both investigations yielded information on the homogeneity of the samples. - An entirely new method of imaging the current distribution in superconducting interference devices (SQUIDs) could be developed. It is based on vortex imaging by LTSEM that had been established several years ago. The vortex signals can be used as local detectors for the vortex-free circulating sheet-current distribution J. Compared to previous inversion methods that infer J from the measured magnetic field, this method gives a more direct measurement of the current distribution. The experimental results were in very good agreement with numerical calculations of J. The presented investigations show how versatile and useful Low Temperature Scanning Electron Microscopy can be for studying superconducting thin film structures. Thus one may expect that many more important results can be obtained with this method.

PantherPix hybrid pixel γ-ray detector for radio-therapeutic applications

NASA Astrophysics Data System (ADS)

Neue, G.; Benka, T.; Havránek, M.; Hejtmánek, M.; Janoška, Z.; Kafka, V.; Korchak, O.; Lednický, D.; Marčišovská, M.; Marčišovský, M.; Popule, J.; Şmarhák, J.; Şvihra, P.; Tomášek, L.; Vrba, V.; Konček, O.; Semmler, M.

2018-02-01

This work focuses on the design of a semiconductor pixelated γ-ray camera with a pixel size of 1 mm2. The cost of semiconductor manufacturing is mainly driven by economies of scale, which makes silicon the cheapest semiconductor material due to its widespread utilization. The energy of γ-photons used in radiation therapy are in a range, in which the dominant interaction mechanism is Compton scattering in every conceivable sensor material. Since the Compton scattering cross section is linearly dependent upon Z, it is less rewarding to utilize high Z sensor materials, than it is in the case of X-ray detectors (X-rays interact also via the photoelectric effect whose cross section scales proportional to Zn, where n is ≈ 4,5). For the stated reasons it was decided to use the low Z material silicon (Z = 14) despite its worse detection efficiency. The proposed detector is designed as a portal detector to be used in radiation cancer therapy. The purpose of the detector is to ensure correct patient alignment, spatial dose monitoring and to provide the feedback necessary for an emergency shutdown should the spatial dose rate profile deviate from the treatment plan. Radiation therapy equipment is complex and thus failure prone and the consequences of malfunction are often life threatening. High spatial resolution and high detection efficiency are not a high design priority. The detector design priorities are focused up on radiation hardness, robustness and the ability to cover a large area cost efficiently. The quintessential idea of the PanterPix detector exploits the relaxed spatial resolution requirement to achieve the stated goals. The detector is composed of submodules, each submodule consisting of a Si sensor with an array of fully depleted detection diodes and 8 miniature custom design readout ASICs collecting and measuring the minuscule charge packets generated due to ionization in the PN junctions.

Amorphous Silicon Based Neutron Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liwei

2004-12-12

Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield usingmore » low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.« less

Towards a heralded eigenstate-preserving measurement of multi-qubit parity in circuit QED

NASA Astrophysics Data System (ADS)

Huembeli, Patrick; Nigg, Simon E.

2017-07-01

Eigenstate-preserving multi-qubit parity measurements lie at the heart of stabilizer quantum error correction, which is a promising approach to mitigate the problem of decoherence in quantum computers. In this work we explore a high-fidelity, eigenstate-preserving parity readout for superconducting qubits dispersively coupled to a microwave resonator, where the parity bit is encoded in the amplitude of a coherent state of the resonator. Detecting photons emitted by the resonator via a current biased Josephson junction yields information about the parity bit. We analyze theoretically the measurement back action in the limit of a strongly coupled fast detector and show that in general such a parity measurement, while approximately quantum nondemolition is not eigenstate preserving. To remediate this shortcoming we propose a simple dynamical decoupling technique during photon detection, which greatly reduces decoherence within a given parity subspace. Furthermore, by applying a sequence of fast displacement operations interleaved with the dynamical decoupling pulses, the natural bias of this binary detector can be efficiently suppressed. Finally, we introduce the concept of a heralded parity measurement, where a detector click guarantees successful multi-qubit parity detection even for finite detection efficiency.

The shot noise thermometer

NASA Astrophysics Data System (ADS)

Spietz, Lafe Frederick

This thesis describes the development and testing of the shot noise thermometer, or SNT, a new kind of noise thermometer based on the combined thermal and shot noise of a tunnel junction in the non-superconducting state. In the shot noise thermometer, the noise power from a tunnel junction is measured as a function of the DC voltage across the junction, and the temperature is determined from the voltage dependence of the noise. This voltage dependence follows directly from the Fermi statistics of electrons in a metal, and is independent of the gain or noise temperature of the microwave amplifiers and detector used to measure the noise. Since the shot noise thermometer requires no calibration from an external temperature standard, it is a primary thermometer. In this thesis I demonstrate the operation of the shot noise thermometer over four orders of magnitude in temperature, from the base temperature of a dilution refrigerator to room temperature. Because of its wide range and the fact that it requires no outside calibration (it is a primary thermometer), the SNT is useful as a thermometer for general use in dilution refrigerators. In addition, the shot noise thermometer has sufficient accuracy to be useful as a potential temperature standard. This thesis discusses both of these applications as well as basic physics questions about the operation of the SNT and prospects for future development of the SNT technology.

Establishment of a universal and rational gene detection strategy through three-way junction-based remote transduction.

PubMed

Tang, Yidan; Lu, Baiyang; Zhu, Zhentong; Li, Bingling

2018-01-21

The polymerase chain reaction and many isothermal amplifications are able to achieve super gene amplification. Unfortunately, most commonly-used transduction methods, such as dye staining and Taqman-like probing, still suffer from shortcomings including false signals or difficult probe design, or are incompatible with multi-analysis. Here a universal and rational gene detection strategy has been established by translating isothermal amplicons to enzyme-free strand displacement circuits via three-way junction-based remote transduction. An assistant transduction probe was imported to form a partial hybrid with the target single-stranded nucleic acid. After systematic optimization the hybrid could serve as an associative trigger to activate a downstream circuit detector via a strand displacement reaction across the three-way junction. By doing so, the detection selectivity can be double-guaranteed through both amplicon-transducer recognition and the amplicon-circuit reaction. A well-optimized circuit can be immediately applied to a new target detection through simply displacing only 10-12 nt on only one component, according to the target. More importantly, this property for the first time enables multi-analysis and logic-analysis in a single reaction, sharing a single fluorescence reporter. In an applicable model, trace amounts of Cronobacter and Enterobacteria genes have been clearly distinguished from samples with no bacteria or one bacterium, with ultra-high sensitivity and selectivity.

Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

2008-01-01

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

Superconducting active impedance converter

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Martens, Jon S.

1993-01-01

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductor allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology.

Monolithic optical link in silicon-on-insulator CMOS technology.

PubMed

Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan

2017-03-06

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n⁺p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

Transmission and reflection of terahertz plasmons in two-dimensional plasmonic devices

DOE PAGES

Sydoruk, Oleksiy; Choonee, Kaushal; Dyer, Gregory Conrad

2015-03-10

We found that plasmons in two-dimensional semiconductor devices will be reflected by discontinuities, notably, junctions between gated and non-gated electron channels. The transmitted and reflected plasmons can form spatially- and frequency-varying signals, and their understanding is important for the design of terahertz detectors, oscillators, and plasmonic crystals. Using mode decomposition, we studied terahertz plasmons incident on a junction between a gated and a nongated channel. The plasmon reflection and transmission coefficients were found numerically and analytically and studied between 0.3 and 1 THz for a range of electron densities. At higher frequencies, we could describe the plasmons by a simplifiedmore » model of channels in homogeneous dielectrics, for which the analytical approximations were accurate. At low frequencies, however, the full geometry and mode spectrum had to be taken into account. Moreover, the results agreed with simulations by the finite-element method. As a result, mode decomposition thus proved to be a powerful method for plasmonic devices, combining the rigor of complete solutions of Maxwell's equations with the convenience of analytical expressions.« less

Year-to-year variations in annual average indoor 222Rn concentrations.

PubMed

Martz, D E; Rood, A S; George, J L; Pearson, M D; Langner, G H

1991-09-01

Annual average indoor 222Rn concentrations in 40 residences in and around Grand Junction, CO, have been measured repeatedly since 1984 using commercial alpha-track monitors (ATM) deployed for successive 12-mo time periods. Data obtained provide a quantitative measure of the year-to-year variations in the annual average Rn concentrations in these structures over this 6-y period. A mean coefficient of variation of 25% was observed for the year-to-year variability of the measurements at 25 sampling stations for which complete data were available. Individual coefficients of variation at the various stations ranged from a low of 7.7% to a high of 51%. The observed mean coefficient of variation includes contributions due to the variability in detector response as well as the true year-to-year variation in the annual average Rn concentrations. Factoring out the contributions from the measured variability in the response of the detectors used, the actual year-to-year variability of the annual average Rn concentrations was approximately 22%.

A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

NASA Astrophysics Data System (ADS)

Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

2017-04-01

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Longxing; Zhang, Quanlin; Chen, Mingming

2014-08-18

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diodemore » is potential for applications of portable UV detectors without driving power.« less

History of HgTe-based photodetectors in Poland

NASA Astrophysics Data System (ADS)

Rogalski, A.

2010-09-01

In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

WE-AB-BRB-10: Filmless QA of CyberKnife MLC-Collimated and Iris-Collimated Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gersh, J; Spectrum Medical Physics, LLC, Greenville, SC

Purpose: Current methods of CK field shape QA is based on the use of radiochromic film. Though accurate results can be attained, these methods are prone to error, time consuming, and expensive. The techniques described herein perform similar QA using the FOIL Detector (Field, Output, and Image Localization). A key feature of this in-house QA solution, and central to this study, is an aSi flat-panel detector which provides the user with the means to perform accurate, immediate, and quantitative field analysis. Methods: The FOIL detector is automatically aligned in the CK beam using fiducial markers implanted within the detector case.more » Once the system is aligned, a treatment plan is delivered which irradiates the flat-panel imager using the field being tested. The current study tests each of the clinically-used fields shaped using the Iris variable-aperture collimation system using a plan which takes 6 minutes to deliver. The user is immediately provided with field diameter and beam profile, as well as a comparison to baseline values. Additionally, the detector is used to acquire and analyze leaf positions of the InCise multi-leaf collimation system. Results: Using a 6-minute plan consisting of 11 beams of 25MU-per-beam, the FOIL detector provided the user with a quantitative analysis of all clinically-used field shapes. The FOIL detector was also able to clearly resolve field edge junctions in a picket fence test, including slight over-travel of individual leaves as well as inter-leaf leakage. Conclusion: The FOIL system provided comparable field diameter and profile data when compared to methods using film; providing results much faster and with 5% of the MU used for film. When used with the MLC system, the FOIL detector provided the means for immediate quantification of the performance of the system through analysis of leaf positions in a picket fence test field. Author is the President/Owner of Spectrum Medical Physics, LLC, a company which maintains contracts with Siemens Healthcare and Standard Imaging, Inc.« less

Optimization and Characterization of a Novel Self Powered Solid State Neutron Detector

NASA Astrophysics Data System (ADS)

Clinton, Justin

There is a strong interest in detecting both the diversion of special nuclear material (SNM) from legitimate, peaceful purposes and the transport of illicit SNM across domestic and international borders and ports. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion layer that converts incident neutrons into detectable charged particles, such as protons, alpha-particles, and heavier ions. Although simple planar devices can act as highly portable, low cost detectors, they have historically been limited to relatively low detection efficiencies; ˜10% and ˜0.2% for thermal and fast detectors, respectively. To increase intrinsic detection efficiency, the incorporation of 3D microstructures into p-i-n silicon devices was proposed. In this research, a combination of existing and new types of detector microstructures were investigated; Monte Carlo models, based on analytical calculations, were constructed and characterized using the GEANT4 simulation toolkit. The simulation output revealed that an array of etched hexagonal holes arranged in a honeycomb pattern and filled with either enriched (99% 10B) boron or parylene resulted in the highest intrinsic detection efficiencies of 48% and 0.88% for thermal and fast neutrons, respectively. The optimal parameters corresponding to each model were utilized as the basis for the fabrication of several prototype detectors. A calibrated 252Cf spontaneous fission source was utilized to generate fast neutrons, while thermal neutrons were created by placing the 252Cf in an HDPE housing designed and optimized using the MCNP simulation software. Upon construction, thermal neutron calibration was performed via activation analysis of gold foils and measurements from a 6Li loaded glass scintillator. Experimental testing of the prototype detectors resulted in maximum intrinsic efficiencies of 4.5 and 0.12% for the thermal and fast devices, respectively. The prototype thermal device was filled with natural (19% 10B) boron; scaling the response to 99% 10B enriched boron resulted in an intrinsic efficiency of 22.5%, one of the highest results in the literature. A comparison of simulated and experimental detector responses demonstrated a high degree of correlation, validating the conceptual models.

3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection

NASA Astrophysics Data System (ADS)

Vignetti, M. M.; Calmon, F.; Pittet, P.; Pares, G.; Cellier, R.; Quiquerez, L.; Chaves de Albuquerque, T.; Bechetoille, E.; Testa, E.; Lopez, J.-P.; Dauvergne, D.; Savoy-Navarro, A.

2018-02-01

Single-Photon Avalanche Diodes (SPADs) are p-n junctions operated in Geiger Mode by applying a reverse bias above the breakdown voltage. SPADs have the advantage of featuring single photon sensitivity with timing resolution in the picoseconds range. Nevertheless, their relatively high Dark Count Rate (DCR) is a major issue for charged particle detection, especially when it is much higher than the incoming particle rate. To tackle this issue, we have developed a 3D Silicon Coincidence Avalanche Detector (3D-SiCAD). This novel device implements two vertically aligned SPADs featuring on-chip electronics for the detection of coincident avalanche events occurring on both SPADs. Such a coincidence detection mode allows an efficient discrimination of events related to an incoming charged particle (producing a quasi-simultaneous activation of both SPADs) from dark counts occurring independently on each SPAD. A 3D-SiCAD detector prototype has been fabricated in CMOS technology adopting a 3D flip-chip integration technique, and the main results of its characterization are reported in this work. The particle detection efficiency and noise rejection capability for this novel device have been evaluated by means of a β- strontium-90 radioactive source. Moreover the impact of the main operating parameters (i.e. the hold-off time, the coincidence window duration, the SPAD excess bias voltage) over the particle detection efficiency has been studied. Measurements have been performed with different β- particles rates and show that a 3D-SiCAD device outperforms single SPAD detectors: the former is indeed capable to detect particle rates much lower than the individual DCR observed in a single SPAD-based detectors (i.e. 2 to 3 orders of magnitudes lower).

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

DOE PAGES

Cartiglia, N.; Staiano, A.; Sola, V.; ...

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup includedmore » three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.« less

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

NASA Astrophysics Data System (ADS)

Cartiglia, N.; Staiano, A.; Sola, V.; Arcidiacono, R.; Cirio, R.; Cenna, F.; Ferrero, M.; Monaco, V.; Mulargia, R.; Obertino, M.; Ravera, F.; Sacchi, R.; Bellora, A.; Durando, S.; Mandurrino, M.; Minafra, N.; Fadeyev, V.; Freeman, P.; Galloway, Z.; Gkougkousis, E.; Grabas, H.; Gruey, B.; Labitan, C. A.; Losakul, R.; Luce, Z.; McKinney-Martinez, F.; Sadrozinski, H. F.-W.; Seiden, A.; Spencer, E.; Wilder, M.; Woods, N.; Zatserklyaniy, A.; Pellegrini, G.; Hidalgo, S.; Carulla, M.; Flores, D.; Merlos, A.; Quirion, D.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Zavrtanik, M.

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

Superconducting active impedance converter

DOEpatents

Ginley, D.S.; Hietala, V.M.; Martens, J.S.

1993-11-16

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductors allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology. 12 figures.

Multi-detector thoracic CT findings in cerebro-costo-mandibular syndrome: rib gaps and failure of costo-vertebral separation.

PubMed

Watson, Tom Anthony; Arthurs, Owen John; Muthialu, Nagarajan; Calder, Alistair Duncan

2014-02-01

Cerebro-costo-mandibular syndrome (CCMS) describes a triad of mandibular hypoplasia, brain dysfunction and posterior rib defects ("rib gaps"). We present the CT imaging for a 2-year-old girl with CCMS that highlights the rib gap defects and shows absent transverse processes with abnormal fusion of the ribs directly to the vertebral bodies. We argue that this is likely to relate to abnormal lateral sclerotome development in embryology, with the failure of normal costo-vertebral junctions compounding impaired thoracic function. The case also highlights the use of CT for specific indications in skeletal dysplasia.

Design and fabrication of a novel self-powered solid-state neutron detector

NASA Astrophysics Data System (ADS)

LiCausi, Nicholas

There is a strong interest in intercepting special nuclear materials (SNM) at national and international borders and ports for homeland security applications. Detection of SNM such as U and Pu is often accomplished by sensing their natural or induced neutron emission. Such detector systems typically use thermal neutron detectors inside a plastic moderator. In order to achieve high detection efficiency gas filled detectors are often used; these detectors require high voltage bias for operation, which complicates the system when tens or hundreds of detectors are deployed. A better type of detector would be an inexpensive solid-state detector that can be mass-produced like any other computer chip. Research surrounding solid-state detectors has been underway since the late 1990's. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion material that converts incident thermal neutrons into detectable alpha-particles and 7Li ions. Existing work has typically used 6LiF or 10B as this conversion layer. Although a simple planar detector can act as a highly portable, low cost detector, it is limited to relatively low detection efficiency (˜10%). To increase the efficiency, 3D perforated p-i-n silicon devices were proposed. To get high efficiency, these detectors need to be biased, resulting in increased leakage current and hence detector noise. In this research, a new type of detector structure was proposed, designed and fabricated. Among several detector structures evaluated, a honeycomb-like silicon p-n structure was selected, which is filled with natural boron as the neutron converter. A silicon p+-n diode formed on the thin silicon wall of the honeycomb structure detects the energetic alpha-particles emitted from the boron conversion layer. The silicon detection layer is fabricated to be fully depleted with an integral step during the boron filling process. This novel feature results in a simplified fabrication process. Three key advantages of the novel devices are theoretical neutron detection efficiency of ˜48%, a self-passivating structure that reduces leakage current and detector operation with no bias resulting in extremely low device noise. Processes required to fabricate the 3D type detector were explored and developed in this thesis. The detector capacitance and processing steps have been simulated with MEDICI and TSuprem-4, respectively. Lithography masks were then designed using Cadence. The fabrication process development was conducted in line with standard CMOS grade integrated circuit processing to allow for simple integration with existing fabrication facilities. A number of new processes were developed including the low pressure chemical vapor deposition of conformal boron films using diborane on very high aspect-ratio trenches and holes. Development also included methods for "wet" chemical etching and "dry" reactive ion etching of the deposited boron films. Fabricated detectors were characterized with the transmission line method, 4-point probe, I-V measurements and C-V measurements. Finally the detector response to thermal neutrons was studied. Characterization has shown significant reduction in reverse leakage current density to ˜8x10-8 A/cm2 (nearly 4 orders of magnitude over the previously published data). Results show that the fabrication process developed is capable of producing efficient (˜22.5%) solid-state thermal neutron detectors.

Josephson Photodetectors via Temperature-to-Phase Conversion

NASA Astrophysics Data System (ADS)

Virtanen, P.; Ronzani, A.; Giazotto, F.

2018-05-01

We theoretically investigate the temperature-to-phase conversion (TPC) process occurring in dc superconducting quantum interferometers based on superconductor-normal-metal-superconductor (S -N -S ) mesoscopic Josephson junctions. In particular, we predict the temperature-driven rearrangement of the phase gradients in the interferometer under the fixed constraints of fluxoid quantization and supercurrent conservation. This mechanism allows sizeable phase variations across the junctions for suitable structure parameters and temperatures. We show that the TPC can be a basis for sensitive single-photon sensors or bolometers. We propose a radiation detector realizable with conventional materials and state-of-the-art nanofabrication techniques. Integrated with a superconducting quantum-interference proximity transistor as a readout setup, an aluminum-based TPC calorimeter can provide a large signal-to-noise ratio >100 in the 10-GHz-10-THz frequency range and a resolving power larger than 1 02 below 50 mK for terahertz photons. In the bolometric operation, electrical noise equivalent power of approximately 10-22 W /√{Hz } is predicted at 50 mK. This device can be attractive as a cryogenic single-photon sensor operating in the giga- and terahertz regime with applications in dark-matter searches.

Microwave amplification with nanomechanical resonators.

PubMed

Massel, F; Heikkilä, T T; Pirkkalainen, J-M; Cho, S U; Saloniemi, H; Hakonen, P J; Sillanpää, M A

2011-12-14

The sensitive measurement of electrical signals is at the heart of modern technology. According to the principles of quantum mechanics, any detector or amplifier necessarily adds a certain amount of noise to the signal, equal to at least the noise added by quantum fluctuations. This quantum limit of added noise has nearly been reached in superconducting devices that take advantage of nonlinearities in Josephson junctions. Here we introduce the concept of the amplification of microwave signals using mechanical oscillation, which seems likely to enable quantum-limited operation. We drive a nanomechanical resonator with a radiation pressure force, and provide an experimental demonstration and an analytical description of how a signal input to a microwave cavity induces coherent stimulated emission and, consequently, signal amplification. This generic scheme, which is based on two linear oscillators, has the advantage of being conceptually and practically simpler than the Josephson junction devices. In our device, we achieve signal amplification of 25 decibels with the addition of 20 quanta of noise, which is consistent with the expected amount of added noise. The generality of the model allows for realization in other physical systems as well, and we anticipate that near-quantum-limited mechanical microwave amplification will soon be feasible in various applications involving integrated electrical circuits.

Perpendicular magnetic tunnel junctions with Mn-modified ultrathin MnGa layer

NASA Astrophysics Data System (ADS)

Suzuki, K. Z.; Miura, Y.; Ranjbar, R.; Bainsla, L.; Ono, A.; Sasaki, Y.; Mizukami, S.

2018-02-01

Perpendicular magnetic tunnel junctions (p-MTJs) with a MgO barrier and a 1-nm-thick MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel magnetoresistance (TMR) ratio systematically increased when increasing the Mn layer thickness with a maximum of 18 (38.4)% at 300 (5) K for a Mn layer thickness of 0.6-0.8 nm. This ratio is five times higher compared to that without the Mn layer. The perpendicular magnetic anisotropy (PMA) field and the PMA constant of the ultrathin MnGa layer also increased up to 62-90 kOe and 6.2-11.3 Merg/cm3, respectively, with an increase in the Mn interlayer thickness, even for the ultrathin regime of the MnGa layer. For p-MTJs showing a high TMR and PMA, electron microscopy indicated the presence of 3-4 MLs of Mn at the MnGa/MgO interface; thus, the Mn modification enhanced the TMR as well as improved the PMA. This may be a promising finding to develop a Mn-based free layer for spin-transfer-torque devices for high-recording-density magnetoresistive random access memory and a sub-THz oscillator/detector.

Photoresponse in La0.9Hf0.1MnO3/0.05wt%Nb-doped SrTiO3 heteroepitaxial junctions

NASA Astrophysics Data System (ADS)

Qi, Yaping; Ni, Hao; Zheng, Ming; Zeng, Jiali; Jiang, Yucheng; Gao, Ju

2018-05-01

Excellent photo detectors need to have the rapid response and good repeatability from the requirement of industrial applications. In this paper, transport behavior and opto-response of heterostructures made with La0.9Hf0.1MnO3 and 0.05wt%Nb-doped SrTiO3 were investigated. The heterojunctions exhibited an excellent rectifying feature with very low leakage in a broad temperature region (from 40 to 300 K). These thin films presented persistent and stable photovoltages upon light illumination. Rapid shift between small and large voltages corresponding to "light OFF" and "light ON" states, respectively, was observed, demonstrating reliable photo detection behavior. A semiconductor laser with a wavelength of 650 nm was used as the light source. It is also noted that the observed photovoltages are strongly determined by light intensity. The injection of photoexcited charge carriers (electrons) could be responsible for the appearance of the observed opto-response. Such manipulative features by light irradiation exhibit great potential for light detectors for visible light.

Performance of an organic photodiode as an optical detector and its application to fluorometric flow-immunoassay for IgA.

PubMed

Miyake, Mayo; Nakajima, Hizuru; Hemmi, Akihide; Yahiro, Masayuki; Adachi, Chihaya; Soh, Nobuaki; Ishimatsu, Ryoichi; Nakano, Koji; Uchiyama, Katsumi; Imato, Toshihiko

2012-07-15

The performance of an organic thin film photodiode (OPD), fabricated from a hetero-junction comprised of two layers of C(60) and a phthalocyanine-Cu(II) complex was evaluated by detecting the chemiluminescence generated from the reaction of luminol with horseradish peroxidase in the presence of H(2)O(2), and the fluorescence from resorufin, as an optical detector. The photocurrent of the OPD was linear with respect to the power of light from a commercial LED. The sensitivity of the OPD was sufficient for detecting chemiluminescence with a power 0.1μW/cm(2). The OPD was successfully used in a flow-immunoassay for IgA, a marker of human stress, in which a sandwich immunoassay was carried out on the microchip and the fluorescence from resorufin, produced by the enzymatic reaction, was detected. The detection limits for resorufin and IgA were 5.0μM and 16ng/mL, respectively. The photosensitivity of the OPD remained relatively constant for a minimum of one year. Copyright © 2012 Elsevier B.V. All rights reserved.

Homebuilt single-molecule scanning confocal fluorescence microscope studies of single DNA/protein interactions.

PubMed

Zheng, Haocheng; Goldner, Lori S; Leuba, Sanford H

2007-03-01

Many technical improvements in fluorescence microscopy over the years have focused on decreasing background and increasing the signal to noise ratio (SNR). The scanning confocal fluorescence microscope (SCFM) represented a major improvement in these efforts. The SCFM acquires signal from a thin layer of a thick sample, rejecting light whose origin is not in the focal plane thereby dramatically decreasing the background signal. A second major innovation was the advent of high quantum-yield, low noise, single-photon counting detectors. The superior background rejection of SCFM combined with low-noise, high-yield detectors makes it possible to detect the fluorescence from single-dye molecules. By labeling a DNA molecule or a DNA/protein complex with a donor/acceptor dye pair, fluorescence resonance energy transfer (FRET) can be used to track conformational changes in the molecule/complex itself, on a single molecule/complex basis. In this methods paper, we describe the core concepts of SCFM in the context of a study that uses FRET to reveal conformational fluctuations in individual Holliday junction DNA molecules and nucleosomal particles. We also discuss data processing methods for SCFM.

Dual-Mode Nuclear Radiation Particle Detector

NASA Astrophysics Data System (ADS)

Zhang, Yali

The design and fabrication of a "dual-mode" nuclear radiation detector using planar silicon technology is described. The device operates at 0.3 K and detects simultaneously the ionization and the phonons produced by nuclear radiation interacting in the substrate. The intended purpose of the device is to detect atomic silicon recoils from the scattering of massive neutral particles that are hypothesized to compose the dark matter halo of our galaxy. The "dual mode" functionality was designed to permit atomic recoils to be distinguished event-by-event from the background due to unavoidable low-level radioactivity in the detector and its surroundings. The device consists of a back contact biased negatively relative to a comb-shaped electrode structure on the opposite face of a high purity wafer. The spacing of the comb teeth is less than the wafer thickness, providing a uniform charge collection electric field throughout most of the wafer volume. Between the teeth of the comb are superconducting transition edge devices consisting of serpentines of 400 A thick, 2 μm wide Ti lines separated by 3 μm spaces. Investigations of ionization-detecting metal-on -silicon contacts at low temperatures are described, including diffused junctions, Au on Si, Au on oxidized Si, and Ti on Si. Diode characteristics continue to change qualitatively at temperatures below 4 K. The destruction of superconductivity in Ti by Au contamination during microfabrication procedures is also reported.

Memorial to Professor Antonio Barone

NASA Astrophysics Data System (ADS)

Tafuri, Francesco; Pepe, Giampiero; Vaglio, Ruggero

2014-04-01

Antonio Barone prematurely passed away on 4 December 2011 at the age of 72, after a one-year battle with cancer. He left behind his wife Sveva and his two sons, Alberto and Livio. Antonio was Professor Emeritus at the University of Napoli Federico II, where he had been teaching for about 40 years. The initial research activity of Antonio was in the field of nuclear physics. In this context, almost 45 years ago, the Ge 'Lithium drift' semiconductor detectors represented a novelty, due to the high energy resolution enabled by those devices. Superconductors stimulated new approaches to radiation detection and this motivated Antonio's interest towards superconductivity. Following the birth of the Laboratorio di Cibernetica of the CNR in 1967 he was given the opportunity to work on a joint USA-Italy project (University of Wisconsin, Madison and CNR Naples) in the field of superconductivity on the peculiar subject of the superconductive 'Neuristors'. His research activity on Josephson junctions opened up a wide variety of very stimulating subjects in which he was deeply involved, ranging from the soliton propagation in 'long' Josephson structures to fluctuations phenomena, from light-sensitive junctions and proximity effect to the development of innovative superconducting devices. The strong interaction of Antonio with the Landau Institute for Theoretical Physics of the Academy of Sciences in Moscow, characterizes a long period of his research activity with a precious merging of theoretical and experimental aspects. This body of work converged into the famous monograph on the 'Physics and Applications of the Josephson Effect', written in collaboration with Gianfranco Paternò in 1982. This rapidly became the reference text for the Josephson effect, as documented by thousands of citations and the fact that it was translated into Russian, Japanese and Chinese. In 1983 Antonio was awarded the highest academic title of 'Doctor of the Physical-Mathematical Sciences' by the Academy of Sciences in Moscow, and later the coveted Kapitza Prize. The discovery of high-Tc superconductors (HTS) offered new problems and perspectives. Antonio and his group significantly contributed by reporting original results on the 'archetype' high-Tc Josephson junctions. His studies on unconventional superconductivity, first developed for 'p-wave' superconductors, had great impact and were very influential on the d-wave experiments on HTS compounds, and later on the physics of HTS Josephson junctions. Macroscopic quantum phenomena and particle detectors are the keywords and the logical paths to recall several relevant contributions from Antonio scattered over more than 40 years of activity. Topics of his interest ranged from the fundamentals of macroscopic quantum tunnelling to barrier penetration in non stationary fields, to finally a project encompassing a wider vision of macroscopic quantum phenomena in unconventional systems. He has filled very important positions of scientific management in Italy and participated in many international committees. He chaired (with R Vaglio) the very successful EUCAS 2003 conference in Sorrento, Italy. He has significantly contributed to the popularization of superconductivity as a professor, as a researcher and as a manager. All scientists that had the privilege to deal with him remember Antonio as a real gentleman of science and life, a man of vision and perspective. The local Organizing Committee and the International Advisory Committee of EUCAS 2013 have dedicated the Session 'Junctions and Squids' to the memory of Professor Antonio Barone1. 1A longer version of this memorial has also been published on the Istituto SPIN-CNR website (www.spin.cnr.it/index.php/barone).

10μm pitch family of InSb and XBn detectors for MWIR imaging

NASA Astrophysics Data System (ADS)

Gershon, G.; Avnon, E.; Brumer, M.; Freiman, W.; Karni, Y.; Niderman, T.; Ofer, O.; Rosenstock, T.; Seref, D.; Shiloah, N.; Shkedy, L.; Tessler, R.; Shtrichman, I.

2017-02-01

There has been a growing demand over the past few years for infrared detectors with a smaller pixel dimension. On the one hand, this trend of pixel shrinkage enables the overall size of a given Focal Plan Array (FPA) to be reduced, allowing the production of more compact, lower power, and lower cost electro-optical (EO) systems. On the other hand, it enables a higher image resolution for a given FPA area, which is especially suitable in infrared systems with a large format that are used with a wide Field of View (FOV). In response to these market trends SCD has developed the Blackbird family of 10 μm pitch MWIR digital infrared detectors. The Blackbird family is based on three different Read- Out Integrated Circuit (ROIC) formats: 1920×1536, 1280×1024 and 640×512, which exploit advanced and mature 0.18 μm CMOS technology and exhibit high functionality with relatively low power consumption. Two types of 10 μm pixel sensing arrays are supported. The first is an InSb photodiode array based on SCD's mature planar implanted p-n junction technology, which covers the full MWIR band, and is designed to operate at 77K. The second type of sensing array covers the blue part of the MWIR band and uses the patented XBn-InAsSb barrier detector technology that provides electro-optical performance equivalent to planar InSb but at operating temperatures as high as 150 K. The XBn detector is therefore ideal for low Size, Weight and Power (SWaP) applications. Both sensing arrays, InSb and XBn, are Flip-chip bonded to the ROICs and assembled into custom designed Dewars that can withstand harsh environmental conditions while minimizing the detector heat load. A dedicated proximity electronics board provides power supplies and timing to the ROIC and enables communication and video output to the system. Together with a wide range of cryogenic coolers, a high flexibility of housing designs and various modes of operation, the Blackbird family of detectors presents solutions for EO systems which cover both the very high-end and the low SWaP types of application. In this work we present in detail the EO performance of the Blackbird detector family.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ianakiev, Kiril Dimitrov; Iliev, Metodi; Swinhoe, Martyn Thomas

The KM200 device is a versatile, configurable front-end electronics boards that can be used as a functional replacement for Canberra’s JAB-01 boards based on the Amptek A-111 hybrid chip, which continues to be the preferred choice of electronics for large number of the boards in junction boxes of multiplicity counters that process the signal from an array of 3He detectors. Unlike the A-111 chip’s fixed time constants and sensitivity range, the shaping time and sensitivity of the new KM200 can be optimized for demanding applications such as spent fuel, and thus could improve the safeguards measurements of existing systems wheremore » the A-111 or PDT electronics does not perform well.« less

SU-E-T-600: In Vivo Dosimetry for Total Body and Total Marrow Irradiations with Optically Stimulated Luminescence Dosimeters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niedbala, M; Save, C; Cygler, J

Purpose: To evaluate the feasibility of using optically stimulated luminescence dosimeters (OSLDs) for in-vivo dosimetry of patients undergoing Total Body and Total Marrow Irradiations (TBI and TMI). Methods: TBI treatments of 12 Gy were delivered in 6 BID fractions with the patient on a moving couch under a static 10 MV beam (Synergy, Elekta). TMI treatments of 18 Gy in 9 BID fractions were planned and delivered using a 6 MV TomoTherapy unit (Accuray). To provide a uniform dose to the entire patient length, the treatment was split into 2 adjacent fields junctioned in the thigh region. Our standard clinicalmore » practice involves in vivo dosimetry with MOSFETs for each TBI fraction and TLDs for at least one fraction of the TMI treatment for dose verification. In this study we also used OSLDs. Individual calibration coefficients were obtained for the OSLDs based on irradiations in a solid water phantom to the dose of 50 cGy from Elekta Synergy 10 MV (TBI) and 6 MV (TMI) beams. Calibration coefficients were calculated based on the OSLDs readings taken 2 hrs post-irradiation. For in vivo dosimetry OSLDs were placed alongside MOSFETs for TBI patients and in approximately the same locations as the TLDs for TMI patients. OSLDs were read 2 hours post treatment and compared to the MOSFET and TLD results. Results: OSLD measured doses agreed within 5% with MOSFET and TLD results, with the exception of the junction region in the TMI patient due to very high dose gradient and difficulty of precise and reproducible detector placement. Conclusion: OSLDs are useful for in vivo dosimetry of TBI and TMI patients. The quick post-treatment readout is an advantage over TLDs, allowing the results to be obtained between BID fractions, while wireless detectors are advantageous over MOSFETs for treatments involving a moving couch.« less

Rocket engine hot-spot detector

NASA Astrophysics Data System (ADS)

Collamore, F. N.

1985-04-01

On high performance devices such as rocket engines it is desirable to know if local hot spots or areas of reduced cooling margin exist. The objective of this program is to design, fabricate and test an electronic hot spot detector capable of sensing local hot spot on the exterior circumference of a regeneratively cooled combustion chamber in order to avoid hardware damage. The electronic hot spot sensor consists of an array of 120 thermocouple elements which are bonded in a flexible belt of polyimide film. The design temperature range is from +30 F to +400 F continuously with an intermittent temperature of 500 F maximum. The thermocouple belt consists of 120 equally spaced copper-Constantan thermocouple junctions which is wrapped around the OMS liquid rocket engine combustion chamber, to monitor temperatures of individual cooling channels. Each thermocouple is located over a cooling channel near the injector end of the combustion chamber. The thermocouple array sensor is held in place by a spring loaded clamp band. Analyses show that in the event of a blocked cooling channel the surface temperature of the chamber over the blocked channel will rise from a normal operating temperature of approx. 300 F to approx. 600 F. The hot spot detector will respond quickly to this change with a response time constant less than 0.05 seconds. The hot spot sensor assembly is fabricated with a laminated construction of layers of Kapton film and an outer protective layer of fiberglass reinforced silicone rubber.

Nanotunneling Junction-based Hyperspectal Polarimetric Photodetector and Detection Method

NASA Technical Reports Server (NTRS)

Son, Kyung-ah (Inventor); Moon, Jeongsun J. (Inventor); Chattopadhyay, Goutam (Inventor); Liao, Anna (Inventor); Ting, David (Inventor)

2009-01-01

A photodetector, detector array, and method of operation thereof in which nanojunctions are formed by crossing layers of nanowires. The crossing nanowires are separated by a few nm thick electrical barrier layer which allows tunneling. Each nanojunction is coupled to a slot antenna for efficient and frequency-selective coupling to photo signals. The nanojunctions formed at the intersection of the crossing wires defines a vertical tunneling diode that rectifies the AC signal from a coupled antenna and generates a DC signal suitable for reforming a video image. The nanojunction sensor allows multi/hyper spectral imaging of radiation within a spectral band ranging from terahertz to visible light, and including infrared (IR) radiation. This new detection approach also offers unprecedented speed, sensitivity and fidelity at room temperature.

Quantum Information Experiments with Trapped Ions at NIST

NASA Astrophysics Data System (ADS)

Wilson, Andrew

2015-03-01

We present an overview of recent trapped-ion quantum information experiments at NIST. Advancing beyond few-qubit ``proof-of-principle'' experiments to the many-qubit systems needed for practical quantum simulation and information processing, without compromising on the performance demonstrated with small systems, remains a major challenge. One approach to scalable hardware development is surface-electrode traps. Micro-fabricated planar traps can have a number of useful features, including flexible electrode geometries, integrated microwave delivery, and spatio-temporal tuning of potentials for ion transport and spin-spin interactions. In this talk we report on a number of on-going investigations with surface traps. Experiments feature a multi-zone trap with closely spaced ions in a triangular arrangement (a first step towards 2D arrays of ions with tunable spin-spin interactions), a scheme for smooth transport through a junction in a 2D structure based on switchable RF potentials, and a micro-fabricated photo-detector integrated into a trap. We also give a progress report on our latest efforts to improve the fidelity of both optical and microwave 2-qubit gates. This work was supported by IARPA, ONR and the NIST Quantum Information Program. The 3-ion and switchable-RF-junction traps were developed in collaboration with Sandia National Laboratory.

Carbon nanotube woven textile photodetector

NASA Astrophysics Data System (ADS)

Zubair, Ahmed; Wang, Xuan; Mirri, Francesca; Tsentalovich, Dmitri E.; Fujimura, Naoki; Suzuki, Daichi; Soundarapandian, Karuppasamy P.; Kawano, Yukio; Pasquali, Matteo; Kono, Junichiro

2018-01-01

The increasing interest in mobile and wearable technology demands the enhancement of functionality of clothing through incorporation of sophisticated architectures of multifunctional materials. Flexible electronic and photonic devices based on organic materials have made impressive progress over the past decade, but higher performance, simpler fabrication, and most importantly, compatibility with woven technology are desired. Here we report on the development of a weaved, substrateless, and polarization-sensitive photodetector based on doping-engineered fibers of highly aligned carbon nanotubes. This room-temperature-operating, self-powered detector responds to radiation in an ultrabroad spectral range, from the ultraviolet to the terahertz, through the photothermoelectric effect, with a low noise-equivalent power (a few nW/Hz 1 /2) throughout the range and with a Z T -factor value that is twice as large as that of previously reported carbon nanotube-based photothermoelectric photodetectors. Particularly, we fabricated a ˜1 -m-long device consisting of tens of p+-p- junctions and weaved it into a shirt. This device demonstrated a collective photoresponse of the series-connected junctions under global illumination. The performance of the device did not show any sign of deterioration through 200 bending tests with a bending radius smaller than 100 μ m as well as standard washing and ironing cycles. This unconventional photodetector will find applications in wearable technology that require detection of electromagnetic radiation.

Heterodyne Detection in MM & Sub-mm Waves Developed at Paris Observatory

NASA Astrophysics Data System (ADS)

Beaudin, G.; Encrenaz, P.

Millimeter and submillimeter-wave observations provide important informations for the studies of atmospheric chemistry and of astrochemistry (molecular clouds, stars formation, galactic study, comets and cosmology). But, these observations depend strongly on instrumentation techniques and on the site quality. New techniques or higher detector performances result in unprecedented observations and sometimes, the observational needs drive developments of new detector technologies, for example, superconducting junctions (SIS mixers) because of its high sensitivity in heterodyne detection in the millimeter and submillimeter wave range (100 GHz - 700 GHz), HEB (Hot Electron Bolometer) mixers which are being developed by several groups for application in THz observations. For the submillimetre wavelengths heterodyne receivers, the local oscillator (LO) is still a critical element. So far, solid state sources are often not powerful enough for most of the applications at millimetre or sub-millimetre wavelengths: large efforts using new planar components and integrated circuits on membrane substrate or new techniques (photomixing, QCL) are now in progress in few groups. The new large projects as SOFIA, Herschel, ALMA and the post-Herschel missions for astronomy, the other projects for aeronomy, meteorology (Megha-tropiques-Saphir) and for planetary science (ROSETTA, Mars exploration, ...), will benefit from the new developments to hunt more molecules.

DUMAND-II (deep underwater muon and neutrino detector) progress report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, K.K.; The DUMAND Collaboration

1995-07-10

The DUMAND II detector will search for astronomical sources of high energy neutrinos. Successful deployment of the basic infrastructure, including the shore cable, the underwater junction box, and an environmental module was accomplished in December, 1993. One optical module string was also deployed and operated, logging data for about 10 hours. The underwater cable was connected to the shore station where we were able to successfully exercise system controls and log further environmental data. After this time, water leaking into the electronics control module for the deployed string disabled the string electrical system. The acquired data are consistent with themore » expected rate of downgoing muons, and our ability to reconstruct muons was demonstrated. The measured acoustical backgrounds are consistent with expectation, which should allow acoustical detection of nearby PeV particle cascades. The disabled string has been recovered and is undergoing repairs ashore. We have identified the source of the water leak and implemented additional testing and QC procedures to ensure no repetition in our next deployment. We will be ready to deploy three strings and begin continuous data taking in late 1994 or early 1995. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ovard R. Perry; David L. Georgeson

This report describes the April 2011 calibration of the Accuscan II HpGe In Vivo system for high energy lung counting. The source used for the calibration was a NIST traceable lung set manufactured at the University of Cincinnati UCLL43AMEU & UCSL43AMEU containing Am-241 and Eu-152 with energies from 26 keV to 1408 keV. The lung set was used in conjunction with a Realistic Torso phantom. The phantom was placed on the RMC II counting table (with pins removed) between the v-ridges on the backwall of the Accuscan II counter. The top of the detector housing was positioned perpendicular to themore » junction of the phantom clavicle with the sternum. This position places the approximate center line of the detector housing with the center of the lungs. The energy and efficiency calibrations were performed using a Realistic Torso phantom (Appendix I) and the University of Cincinnati lung set. This report includes an overview introduction and records for the energy/FWHM and efficiency calibration including performance verification and validation counting. The Accuscan II system was successfully calibrated for high energy lung counting and verified in accordance with ANSI/HPS N13.30-1996 criteria.« less

Design of Cryocoolers for Microwatt Superconducting Devices

NASA Technical Reports Server (NTRS)

Zimmerman, J. E.

1985-01-01

The primary applications of the cryocoolers are for cooling various Josephson devices such as SQUID magnetometers and amplifiers, voltage standards, and microwave mixers and detectors. The common feature of these devices is their extremely low inherent bias power requirement, of the order of 10/1 W per junction. This provides the possibility of designing compact, low-power cryocoolers for these applications. Several concepts were explored and a number of laboratory model cryocoolers were built. These include low-power nonmagnetic regenerative machines of the Stirling or Gifford-McMahon type, three or four-stage Joule-Thomson machines, liquid-helium dewars with integral small cryocoolers to reduce the evaporation rate, and liquid-helium dewars with integral continuously or intermittently operated small helium liquefiers to permit operation of cryogenic devices for indefinite time periods.

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1973-01-01

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

NASA Astrophysics Data System (ADS)

Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

2018-04-01

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

In-Situ Grown P-N Junctions in MERCURY(1-X) Cadmium(x) Telluride for IR Detectors.

NASA Astrophysics Data System (ADS)

Rao, Vithal Rajaram

In-situ grown p-n junctions in mercury cadmium telluride (Hg_{1-x}Cd _{x}Te with x between 0.2-0.3) were fabricated and characterized in this study. Fabrication of these junctions involved the growth of p-n structures at 370^circC on CdTe substrates by Organometallic Vapor Phase Epitaxy. P-type doping with arsenic was achieved by using tertiarybutylarsine as the precursor. N-type doping was obtained either with indium, using trimethylindium as the precursor or by leaving the layer undoped. These p-n structures were processed to fabricate photodiodes. Their electrical performance was evaluated and conclusions regarding current mechanisms which determine their behavior were drawn. By varying the Hg pressure between 0.07-0.13 atm, p-type doping level in the 10^{16 }/cm^3-rm2times10 ^{17}/cm^3 range was achieved. At higher values of Hg pressure, the arsenic doping level in the layer increased significantly. This is possibly due to an increase in Te vacancies, allowing arsenic to occupy more group VI sites where they behave as acceptors. The activation efficiency of arsenic in the layers was measured to be equal to 50%. A high temperature anneal at 415 ^circC for 15 minutes did not result in any increase in the activation efficiency, possibly indicating the presence of stable As-complexes in the layer. Growth of p^+n structures was carried out in a single run. The acceptor concentration in the p-type cap layer was 5-rm10times10 ^{16}/cm^3. Indium doped n-type base layers had a carrier concentration of 1- rm2times10^{16}/cm^3 , while undoped layers had a n-type background carrier concentration of 4-rm6times10^ {14}/cm^3. The cap layer was 3 μm thick with x = 0.30, while the base layer was 8mum thick with x = 0.26. Under the growth conditions, arsenic showed a diffusion coefficient of rm2times10 ^{13}cm^2/s, which was higher than the interdiffusion coefficient of the alloy junction. This resulted in placement of the p-n junction in the lower bandgap base layer, which is necessary for high quantum efficiency devices. Photodiodes showed a cutoff wavelength of 7.5 mum, which correlates with the alloy composition of the base layer. Measured R_0 A of these diodes varied between 1-100 ohm-cm ^2. In the lower R_0A diodes, reverse bias was dominated by surface currents, possibly due to degradation of the passivating layer. Diodes with higher R_0A showed under reverse bias that trap assisted tunneling current dominated their performance. The origin of these traps is process related and could correspond to the presence of inactivated arsenic close to the p-n junction. Forward bias was dominated by diffusion and recombination currents, while the presence of additional leakage currents was evident.

Demonstration of a scalable frequency-domain readout of metallic magnetic calorimeters by means of a microwave SQUID multiplexer

NASA Astrophysics Data System (ADS)

Kempf, Sebastian; Wegner, Mathias; Fleischmann, Andreas; Gastaldo, Loredana; Herrmann, Felix; Papst, Maximilian; Richter, Daniel; Enss, Christian

2017-01-01

We report on the first demonstration of a scalable GHz frequency-domain readout of metallic magnetic calorimeters (MMCs) using a 64 pixel detector array that is read out by an integrated, on-chip microwave SQUID multiplexer. The detector array is optimized for detecting soft X-ray photons and the multiplexer is designed to provide a signal rise time τrise<400 ns and an intrinsic energy sensitivity ɛ <30 h . This results in an expected energy resolution Δ EFWHM <10 eV . We measured a signal rise time τrise as low as 90 ns and an energy resolution Δ EFWHM as low as 50 eV for 5.9 keV photons. The rise time is about an order of magnitude faster compared to other multiplexed low-temperature microcalorimeters and close to the intrinsic value set by the coupling between electron and spins. The energy resolution is degraded with respect to our design value due to a rather low intrinsic quality factor of the microwave resonators that is caused by the quality of the Josephson junction of the associated rf-SQUID as well as an elevated chip temperature as compared to the heat bath. Though the achieved energy resolution is not yet compatible with state-of-the-art single-channel MMCs, this demonstration of a scalable readout approach for MMCs in combination with the full understanding of the device performance showing ways how to improve represents an important milestone for the development of future large-scale MMC detector arrays.

Intercomparison of active and passive instruments for radon and radon progeny in North America

DOE Office of Scientific and Technical Information (OSTI.GOV)

George, A.C.; Tu, Keng-Wu; Knutson, E.O.

1995-02-01

An intercomparison exercise for radon and radon progeny instruments and methods was held at the Environmental Measurements Laboratory (EML) from April 22--May 2, 1994. The exercise was conducted in the new EML radon test and calibration facility in which conditions of exposure are very well controlled. The detection systems of the intercompared instruments consisted of. (1) pulse ionization chambers, (2) electret ionization chambers, (3) scintillation detectors, (4) alpha particle spectrometers with silicon diodes, surface barrier or diffused junction detectors, (5) registration of nuclear tracks in solid-state materials, and (6) activated carbon collectors counted by gamma-ray spectrometry or by alpha- andmore » beta-liquid scintillation counting. 23 private firms, government laboratories and universities participated with a 165 passive integrating devices consisting of: Activated carbon collectors, nuclear alpha track detectors and electret ionization chambers, and 11 active and passive continuous radon monitors. Five portable integrating and continuous instruments were intercompared for radon progeny. Forty grab samples for radon progeny were taken by five groups that participated in person to test and evaluate their primary instruments and methods that measure individual radon progeny and the potential alpha energy concentration (PAEC) in indoor air. Results indicate that more than 80% of the measurements for radon performed with a variety of instruments, are within {plus_minus}10% of actual value. The majority of the instruments that measure individual radon progeny and the PAEC gave results that are in good agreement with the EML reference value. Radon progeny measurements made with continuous and integrating instruments are satisfactory with room for improvement.« less

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, Jozef; Piotrowski, Adam

2005-09-01

The history and present status of the middle and long wavelength Hg1xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapor phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapor phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. Actually, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Propagation Distance of the α-Particle-Induced Bystander Effect: The Role of Nuclear Traversal and Gap Junction Communication

PubMed Central

Gaillard, Sylvain; Pusset, David; de Toledo, Sonia M.; Fromm, Michel; Azzam, Edouard I.

2009-01-01

When cell populations are exposed to low-dose α-particle radiation, a significant fraction of the cells will not be traversed by a radiation track. However, stressful effects occur in both irradiated and bystander cells in the population. Characterizing these effects, and investigating their underlying mechanism(s), is critical to understanding human health risks associated with exposure to α particles. To this end, confluent normal human fibroblast cultures were grown on polyethylene terephthalate foil grafted to an ultrathin solid-state nuclear track detector and exposed under non-perturbing conditions to low-fluence α particles from a broadbeam irradiator. Irradiated and affected bystander cells were localized with micrometer precision. The stress-responsive protein p21Waf1 (also known as CDKN1A) was induced in bystander cells within a 100-µm radius from an irradiated cell. The mean propagation distance ranged from 20 to 40 µm around the intranuclear α-particle impact point, which corresponds to a set of ∼30 cells. Nuclear traversal, induced DNA damage, and gap junction communication were critical contributors to propagation of this stressful effect The strategy described here may be ideal to investigate the size of radiation-affected target and the relative contribution of different cellular organelles to bystander effects induced by energetic particles, which is relevant to radioprotection and cancer radiotherapy. PMID:19580486

High resolution diagnosis of common nevi by multiphoton laser tomography and fluorescence lifetime imaging.

PubMed

Arginelli, Federica; Manfredini, Marco; Bassoli, Sara; Dunsby, Christopher; French, Paul; König, Karsten; Magnoni, Cristina; Ponti, Giovanni; Talbot, Clifford; Seidenari, Stefania

2013-05-01

Multiphoton Laser Tomography (MPT) has developed as a non-invasive tool that allows real-time observation of the skin with subcellular resolution. MPT is readily combined with time resolved detectors to achieve fluorescence lifetime imaging (FLIM). The aim of our study was to identify morphologic MPT/FLIM descriptors of melanocytic nevi, referring to cellular and architectural features. In the preliminary study, MPT/FLIM images referring to 16 ex vivo nevi were simultaneously evaluated by 3 observers for the identification of morphologic descriptors characteristic of melanocytic nevi. Proposed descriptors were discussed and the parameters referring to epidermal keratinocytes, epidermal melanocytes, dermo-epidermal junction, papillary dermis and overall architecture were selected. In the main study, the presence/absence of the specified criteria were blindly evaluated on a test set, comprising 102 ex vivo samples (51 melanocytic nevi, 51 miscellaneous skin lesions) by 2 observers. Twelve descriptors were identified: "short-lifetime cells in the stratum corneum", "melanin-containing keratinocytes", "dendritic cells", "small short-lifetime cells" in the upper and lower layers", "edged papillae", "non-edged papillae", "junctional nests of short-lifetime cells", "dermal cell clusters", "short-lifetime cells in the papilla", "monomorphic and regular histoarchitecture", "architectural disarray". Identified descriptors for benign melanocytic lesions proved sensitive and specific, enabling the differentiation between melanocytic nevi and non-melanocytic lesions. © 2012 John Wiley & Sons A/S. Published by Blackwell Publishing Ltd.

Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Yu-Hsin

This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the primary photocurrent and related to the phonon absorption time, predicts the same trend of the gain increasing with temperature and decreasing with increasing primary photocurrent.

Use of Energy Efficient Sensor Networks to Enhance Dynamic Data Gathering Systems: A Comparative Study between Bluetooth and ZigBee.

PubMed

Gheorghiu, Razvan Andrei; Iordache, Valentin

2018-06-03

As road traffic conditions worsen due to the constantly increasing number of cars, traffic management systems are struggling to provide a suitable environment, by gathering all the relevant information from the road network. However, in most cases these are obtained via traffic detectors placed near road junctions, thus providing no information on the conditions in between. A large-scale sensor network using detectors on the majority of vehicles would certainly be capable of providing useful data, but has two major impediments: the equipment installed on the vehicles should be cheap enough (assuming the willingness of private car owners to be a part of the network) and be capable of transferring the required amount of data in due time, as the vehicle passes by the road side unit that acts as interface with the traffic management system. These restrictions reduce the number of technologies that can be used. In this article a series of comprehensive tests have been performed to evaluate the Bluetooth and ZigBee protocols for this purpose from many points of view: handshake time, static and dynamic data transfer (in laboratory conditions and in real traffic conditions). An assessment of the environmental conditions (during tests and probable to be encountered in real conditions) was also provided.

Manual and Flow-Injection Detection/Quantification of Polyquaterniums via Fully Reversible Polyion-Sensitive Polymeric Membrane-Based Ion-Selective Electrodes.

PubMed

Ferguson, Stephen A; Meyerhoff, Mark E

2017-10-27

The detection of four different polyquaterniums (PQs) using a fully reversible potentiometric polyion sensor in three different detection modes is described. The polyion sensing "pulstrodes" serve as the detector for direct dose-response experiments, beaker titrations, and in a flow-injection analysis (FIA) system. Direct polycation response toward PQ-2, PQ-6, PQ-10, and poly(2-methacryloxyethyltrimethylammonium) chloride (PMETAC) yields characteristic information about each PQ species (e.g., relative charge densities, etc.) via syringe pump addition of each PQ species to a background electrolyte solution. Quantitative titrations are performed using a syringe pump to deliver heparin as the polyanion titrant to quantify all four PQs at μg/mL levels. Both the direct and indirect methods incorporate the use of a three-electrode system including counter, double junction reference, and working electrodes. The working electrode possesses a plasticized poly(vinyl chloride) (PVC) membrane containing the neutral lipophilic salt of dinonylnaphthalenesulfonate (DNNS - ) tridodecylmethylammonium (TDMA + ). Further, the titration method is shown to be useful to quantify PQ-6 levels in recreational swimming pool water collected in Ann Arbor, MI. Finally, a FIA system equipped with a pulstrode detector is used to demonstrate the ability to potentially quantify PQ levels via a more streamlined and semiautomated testing platform.

Applications of AMPS-1D for solar cell simulation

NASA Astrophysics Data System (ADS)

Zhu, Hong; Kalkan, Ali Kaan; Hou, Jingya; Fonash, Stephen J.

1999-03-01

The AMPS-1D PC computer program is now used by over 70 groups world-wide for detector and solar cell analysis. It has proved to be a very powerful tool in understanding device operation and physics for single crystal, poly-crystalline and amorphous structures. For example, AMPS-1D has been successful in explaining the "red kink" [1] and the "transient effect" in CdS/CIGS poly-crystalline solar cells. It has been used to show that thin film poly-Si structures, with reasonable light trapping, are capable of competitive solar cell conversion efficiencies. In the case of a-Si:H structures, it has been used, for example, to settle the discrepancies in bandgap measurement, to predict the effective QE>1 phenomenon later seen in these materials [2], to determine the relative roles of interface and bulk properties, and to point the direction toward 16% triple junction structures. In general AMPS-1D is used for cell and detector design, material parameter sensitivity studies, and parameter extraction. Recently we have shown that it can be used to determine optimum structure and light and voltage biasing conditions in the material parameter extraction function. Information on AMPS can be found at www.psu.edu/dept/AMPS/amps_web/AMPS.html and at other web sites set up by user groups.

SU-E-T-138: Dosimetric Verification For Volumetric Modulated Arc Therapy Cranio-Spinal Irradiation Technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goksel, E; Bilge, H; Yildiz, Yarar

2014-06-01

Purpose: Dosimetric feasibility of cranio-spinal irradiation with volumetric modulated arc therapy (VMAT-CSI) technique in terms of dose distribution accuracy was investigated using a humanlike phantom. Methods: The OARs and PTV volumes for the Rando phantom were generated on supine CT images. Eclipse (version 8.6) TPS with AAA algorithm was used to create the treatment plan with VMAT-CSI technique. RapidArc plan consisted of cranial, upper spinal (US) and lower spinal (LS) regions that were optimized in the same plan. US field was overlapped by 3cm with cranial and LS fields. Three partial arcs for cranium and 1 full arc for eachmore » US and LS region were used. The VMAT-CSI dose distribution inside the Rando phantom was measured with thermoluminescent detectors (TLD) and film dosimetry, and was compared to the calculated doses of field junctions, target and OARs. TLDs were placed at 24 positions throughout the phantom. The measured TLD doses were compared to the calculated point doses. Planar doses for field junctions were verified with Gafchromic films. Films were analyzed in PTW Verisoft application software using gamma analysis method with the 4 mm distance to agreement (DTA) and 4% dose agreement criteria. Results: TLD readings demonstrated accurate dose delivery, with a median dose difference of -0.3% (range: -8% and 12%) when compared with calculated doses for the areas inside the treatment portal. The maximum dose difference was 12% higher in testicals that are outside the treatment region and 8% lower in lungs where the heterogeinity was higher. All planar dose verifications for field junctions passed the gamma analysis and measured planar dose distributions demonstrated average 97% agreement with calculated doses. Conclusion: The dosimetric data verified with TLD and film dosimetry shows that VMAT-CSI technique provides accurate dose distribution and can be delivered safely.« less

Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure

NASA Technical Reports Server (NTRS)

Karasik, Boris S.; Gill, John J.; Mehdi, Imran; Crawford, Timothy J.; Sergeev, Andrei V.; Mitin, Vladimir V.

2012-01-01

High-resolution submillimeter/terahertz spectroscopy is important for studying atmospheric and interstellar molecular gaseous species. It typically uses heterodyne receivers where an unknown (weak) signal is mixed with a strong signal from the local oscillator (LO) operating at a slightly different frequency. The non-linear mixer devices for this frequency range are unique and are not off-the-shelf commercial products. Three types of THz mixers are commonly used: Schottky diode, superconducting hot-electron bolometer (HEB), and superconductor-insulation-superconductor (SIS) junction. A HEB mixer based on the two-dimensional electron gas (2DEG) formed at the interface of two slightly dissimilar semiconductors was developed. This mixer can operate at temperatures between 100 and 300 K, and thus can be used with just passive radiative cooling available even on small spacecraft.

Advanced components for spaceborne infrared astronomy

NASA Technical Reports Server (NTRS)

Davidson, A. W.

1984-01-01

The need for improved cryogenic components to be used in future spaceborne infrared astronomy missions was identified. Improved low noise cryogenic amplifiers operated with infrared detectors, and better cryogenic actuators and motors with extremely low power dissipation are needed. The feasibility of achieving technological breakthroughs in both of these areas was studied. An improved silicon junction field effect transistor (JFET) could be developed if: (1) high purity silicon; (2) optimum dopants; and (3) very high doping levels are used. The feasibility of a simple stepper motor equipped with superconducting coils is demonstrated by construction of such a device based on a standard commercial motor. It is found that useful levels of torque at immeasurably low power levels were achieved. It is concluded that with modest development and optimization efforts, significant performance gains is possible for both cryogenic preamplifiers and superconducting motors and actuators.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Gamma thermometer based reactor core liquid level detector

DOEpatents

Burns, Thomas J.

1983-01-01

A system is provided which employs a modified gamma thermometer for determining the liquid coolant level within a nuclear reactor core. The gamma thermometer which normally is employed to monitor local core heat generation rate (reactor power), is modified by thermocouple junctions and leads to obtain an unambiguous indication of the presence or absence of coolant liquid at the gamma thermometer location. A signal processor generates a signal based on the thermometer surface heat transfer coefficient by comparing the signals from the thermocouples at the thermometer location. The generated signal is a direct indication of loss of coolant due to the change in surface heat transfer when coolant liquid drops below the thermometer location. The loss of coolant indication is independent of reactor power at the thermometer location. Further, the same thermometer may still be used for the normal power monitoring function.

Probing individual tunneling fluctuators with coherently controlled tunneling systems

NASA Astrophysics Data System (ADS)

Meißner, Saskia M.; Seiler, Arnold; Lisenfeld, Jürgen; Ustinov, Alexey V.; Weiss, Georg

2018-05-01

Josephson junctions made from aluminum and its oxide are the most commonly used functional elements for superconducting circuits and qubits. It is generally known that the disordered thin film AlOx contains atomic tunneling systems. Coherent tunneling systems may couple strongly to a qubit via their electric dipole moment, giving rise to spectral level repulsion. In addition, slowly fluctuating tunneling systems are observable when they are located close to coherent ones and distort their potentials. This interaction causes telegraphic switching of the coherent tunneling systems' energy splitting. Here, we measure such switching induced by individual fluctuators on timescales from hours to minutes using a superconducting qubit as a detector. Moreover, we extend the range of measurable switching times to millisecond scales by employing a highly sensitive single-photon qubit swap spectroscopy and statistical analysis of the measured qubit states.

InGaAs nano-photodetectors based on photonic crystal waveguide including ultracompact buried heterostructure.

PubMed

Nozaki, Kengo; Matsuo, Shinji; Takeda, Koji; Sato, Tomonari; Kuramochi, Eiichi; Notomi, Masaya

2013-08-12

Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstrated for the first time. A sufficiently high DC responsivity of ~1 A/W was achieved for the 3.4-μm-long detector. The dynamic response revealed a 3-dB bandwidth of 6 GHz and a 10-Gb/s eye pattern. These results were thanks to the strong confinement of both photons and carriers in a small BH and will pave the way for unprecedented nano-photodetectors with a high quantum efficiency and small capacitance. Our device potentially has an ultrasmall junction capacitance of much less than 1 fF and may enable us to eliminate electrical amplifiers for future optical receivers and subsequent ultralow-power optical links on a chip.

Three-junction solar cell

DOEpatents

Ludowise, Michael J.

1986-01-01

A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, J.; Piotrowski, A.

2006-03-01

The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

PubMed

Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

2017-04-01

The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, Mark W.

1995-01-01

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Electronic thermometry in tunable tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maksymovych, Petro

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may bemore » measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.« less

Direct Visualization of Local Electromagnetic Field Structures by Scanning Transmission Electron Microscopy.

PubMed

Shibata, Naoya; Findlay, Scott D; Matsumoto, Takao; Kohno, Yuji; Seki, Takehito; Sánchez-Santolino, Gabriel; Ikuhara, Yuichi

2017-07-18

The functional properties of materials and devices are critically determined by the electromagnetic field structures formed inside them, especially at nanointerface and surface regions, because such structures are strongly associated with the dynamics of electrons, holes and ions. To understand the fundamental origin of many exotic properties in modern materials and devices, it is essential to directly characterize local electromagnetic field structures at such defect regions, even down to atomic dimensions. In recent years, rapid progress in the development of high-speed area detectors for aberration-corrected scanning transmission electron microscopy (STEM) with sub-angstrom spatial resolution has opened new possibilities to directly image such electromagnetic field structures at very high-resolution. In this Account, we give an overview of our recent development of differential phase contrast (DPC) microscopy for aberration-corrected STEM and its application to many materials problems. In recent years, we have developed segmented-type STEM detectors which divide the detector plane into 16 segments and enable simultaneous imaging of 16 STEM images which are sensitive to the positions and angles of transmitted/scattered electrons on the detector plane. These detectors also have atomic-resolution imaging capability. Using these segmented-type STEM detectors, we show DPC STEM imaging to be a very powerful tool for directly imaging local electromagnetic field structures in materials and devices in real space. For example, DPC STEM can clearly visualize the local electric field variation due to the abrupt potential change across a p-n junction in a GaAs semiconductor, which cannot be observed by normal in-focus bright-field or annular type dark-field STEM imaging modes. DPC STEM is also very effective for imaging magnetic field structures in magnetic materials, such as magnetic domains and skyrmions. Moreover, real-time imaging of electromagnetic field structures can now be realized through very fast data acquisition, processing, and reconstruction algorithms. If we use DPC STEM for atomic-resolution imaging using a sub-angstrom size electron probe, it has been shown that we can directly observe the atomic electric field inside atoms within crystals and even inside single atoms, the field between the atomic nucleus and the surrounding electron cloud, which possesses information about the atomic species, local chemical bonding and charge redistribution between bonded atoms. This possibility may open an alternative way for directly visualizing atoms and nanostructures, that is, seeing atoms as an entity of electromagnetic fields that reflect the intra- and interatomic electronic structures. In this Account, the current status of aberration-corrected DPC STEM is highlighted, along with some applications in real material and device studies.

Gap junctions contain different amounts of cholesterol which undergo unique sequestering processes during fiber cell differentiation in the embryonic chicken lens.

PubMed

Biswas, Sondip K; Lo, Woo-Kuen

2007-03-09

To determine the possible changes in the distribution of cholesterol in gap junction plaques during fiber cell differentiation and maturation in the embryonic chicken lens. The possible mechanism by which cholesterol is removed from gap junction plaques is also investigated. Filipin cytochemistry in conjunction with freeze-fracture TEM was used to visualize cholesterol, as represented by filipin-cholesterol complexes (FCCs) in gap junction plaques. Quantitative analysis on the heterogeneous distribution of cholesterol in gap junction plaques was conducted from outer and inner cortical regions. A novel technique combining filipin cytochemistry with freeze-fracture replica immunogold labeling (FRIL) was used to label Cx45.6 and Cx56 antibodies in cholesterol-containing gap junctions. Filipin cytochemistry and freeze-fracture TEM and thin-section TEM were used to examine the appearance and nature of the cholesterol-containing vesicular structures associated with gap junction plaques. Chicken lens fibers contain cholesterol-rich, cholesterol-intermediate and cholesterol-free gap junction populations in both outer and inner cortical regions. Filipin cytochemistry and FRIL studies confirmed that cholesterol-containing junctions were gap junctions. Quantitative analysis showed that approximately 86% of gap junctions in the outer cortical zone were cholesterol-rich gap junctions, whereas approximately 81% of gap junctions in the inner cortical zone were cholesterol-free gap junctions. A number of pleiomorphic cholesterol-rich vesicles of varying sizes were often observed in the gap junction plaques. They appear to be involved in the removal of cholesterol from gap junction plaques through endocytosis. Gap junctions in the young fibers are enriched with cholesterol because they are assembled in the unique cholesterol-rich cell membranes in the lens. A majority of cholesterol-rich gap junctions in the outer young fibers are transformed into cholesterol-free ones in the inner mature fibers during fiber cell maturation. A distinct endocytotic process appears to be involved in removing cholesterol from the cholesterol-containing gap junctions, and it may play a major role in the transformation of cholesterol-rich gap junctions into cholesterol-free ones during fiber cell maturation.

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, M.W.

1995-02-21

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.

Gap/silicon Tandem Solar Cell with Extended Temperature Range

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2006-01-01

A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

CONFERENCE SUMMARY: Summary and comment on superconducting analogue electronics research, including materials and fabrication, as presented at ISEC 07

NASA Astrophysics Data System (ADS)

Foley, C. P.

2007-11-01

The main theme at ISEC 2007 for superconducting materials, fabrication and analogue electronics was the description of incremental developments, including a few new directions that indicate breakthroughs in this area of research. The work on applications focused on their cost-benefit analysis (in order to improve their appeal), the development of simpler systems, making more of the data collected, improving packaging and being responsive to the power handling requirements for commercial systems. All papers presenting this level of research highlighted the importance of obtaining all the necessary details in order to investigate analogue devices and the effectiveness and commercial viability of their systems. This stage of development is important if we are to achieve the transition of superconducting electronics from the laboratory to commercial use. There were some exciting disruptive breakthroughs reported. These were in the areas of nano-SQUIDs, rotating gradiometers, superconducting scanning tunnelling microscopy (Hayashi et al) and the potential of superconducting photonics using optical interfaces with superconducting vortex flow transistors, for example. The materials research in low (LTS), high (HTS) and medium (MTS) critical temperature superconductors was reported. In LTS, nitrides emerged as important materials for use as new tunnel barriers, either insulating or semiconducting. Papers on BaN, NbN, TaN, GaN and Nb-Si superconducting materials were also presented. The MTS material of MgB2 is still under development (Zhao et al). There were also new research groups from South Africa and Turkey attending the conference. The fabrication research presented covered the areas of critical current Ic spread, which is still an issue in reducing the reproducibility of Josephson junctions, a 150 mm process for Nb/Al-AlOx/Nb and methods to improve barrier layers using both new materials and smooth surfaces at thin film interfaces (Du et al). New methods to make sub-micron Josephson junctions using laser etching (Büttner et al) and the development of passivation layers using amorphous YBCO and SiO2 (Seidel et al) were also presented. Characterization methods using Raman and photo-emission spectroscopy (Kikunaga et al) emerged as fresh approaches. Josephson junction (JJ) research covered the areas of critical current fluctuations where results on Tl-based junctions suggested a 40 times lower δI/Ic, and LTS junctions for voltage standards using a Nb-Si barrier for improved SNS junctions (Kieler et al). Development of MTS junctions based on MgB2 are yet to be realized with the interface barrier appearing to be the limiting factor. HTS Josephson junctions were reviewed by asking the question: `Are all HTS JJs the same?' with a clear `no' as the answer. Research on intrinsic stacked junctions, sub-micron junctions, the manipulation of electronic band structure to increase energy gap and mid-gap states was also presented. Developments in packaging and cooling were not as dominant at this conference as in previous years. However, there was research reported on the importance of non-magnetic structures in packaging, the design of magnetic shielding improvement by using finite element analysis to optimize design (Tanaka et al) and the use of cryocoolers (Vernik et al). SQUID research reported some breakthrough developments with new ideas presented on nano-SQUIDs with the possible detection of a ferritin spin-flip, a successful airborne trial using a rotating gradiometer and the development of a new 4 cm long baseline planar gradiometer, achieving a sensitivity of 35 fT cm-1 Hz-½. Applications in non-destructive evaluation (NDE) covered the use of SQUIDs in the detection of stainless steel foreign objects in food, defects in wire and circuit boards and surface imaging with most developments focusing on potential customer requirements. Biomagnetic applications have continued to be embraced in the use of SQUIDs in MRI (Zotev et al), NMR, MEG (including one paper that did not use SQUIDs), immunoassays (close to single cell detection—30 cells to date) and in spinal cord injury detection using quadrapoles. Instrumentation using various devices for thermometers (fast response), micro-susceptometers, current comparators and spin-flip measurements were reported. There were few papers on the use of SQUIDs for geophysical prospecting. This area of application is now commercially mature with research in the field being presented at mineral exploration conferences. However, one paper reported the development of an HTS transient electromagnetic (TEM) system with similar sensitivities to those demonstrated by LTS systems due to improved electronics. The application of nuclear quadrupole resonance for explosives using gate arrays for noise reduction was also reported. There were some novel devices presented with an excellent overview on SQUIFs which were first suggested by Richard Feynman in his well-known university lecture series in physics. This work continues with the aim of achieving the measurement of the absolute value (or true field) of magnetic fields with the question being asked: `Can you really create a zero magnetic field environment?'. Detector research presented at the conference considered the exciting applications in THz imaging. Superconducting bolometers with anti-reflection coatings and using MgB2 (Portesi et al) were reported suggesting improved performance. The application for the improvedr discrimination of radioactive materials by spectroscopy will be very important in the implementation of the Nuclear Non-proliferation Treaty. Single-photon detectors were reported using Nb nanowires (NbN), ferromagnets in nanolayers and SiN transition edge absorbers. Resonators based on SQUID arrays (He et al) and frequency adjustable Josephson junctions were also reported, along with receivers for radio astronomy. Filters have been found to be improved using MgB2, which showed increased Q factors using a split-ring element design (68000 at 5 GHz). This author also used the summing-up session to talk about the need for cooperation leading up to the setting of international standards for superconducting devices. For instance, in the standardization of connections to coolers to enable black box operation, in order to achieve the long-term vision that one day anyone could source a superconducting component from a standard electronics catalogue! Finally, some general comments on the conference. There were not many students (or females) as attendees, which suggests we need to consider more closely the future generation to take the current research to fruition. Nevertheless there was a clear movement forward with some exciting new developments and some new research groups participating, but some important superconducting electronics research groups did not attend. This calls into question the status of the funding of research into superconducting electronics. However, some clear applications, where superconducting electronics provides the only solution, are clearly achieving maturity in their development and adoption. Our research community needs to make sure these developments are recognized to ensure a healthy future for superconducting electronics research, development and commercialization.

Gap and tight junctions in the formation of feather branches: A descriptive ultrastructural study.

PubMed

Alibardi, Lorenzo

2010-08-20

The present study has focused on the distribution and ultrastructure of gap and tight junctions responsible for the formation of the barb/barbule branching in developing feathers using immunocytochemical detection. Apart from desmosomes, both tight and gap junctions are present between differentiating barb/barbule cells and during keratinization. While gap junctions are rare along the perimeter of these cells, tight junctions tend to remain localized in nodes joining barbule cells and between barb cells of the ramus. Occludin and connexin-26 but not connexin-43 have been detected between barb medullary, barb cortical and barbule cells during formation of barbs. Gap junctions are present in supportive cells located in the vicinity of barbule cells and destined to degenerate, but no close junctions are present between supportive and barb/barbule cells. Close junctions mature into penta-laminar junctions that are present between mature barb/barbule cells. Immunolabeling for occludin and Cx26 is rare along these cornified junctions. The junctions allow barb/barbule cells to remain connected until feather-keratin form the mature corneous syncytium that constitutes the barbs. A discussion of the role of gap and tight junctions during feather morphogenesis is presented. 2010 Elsevier GmbH. All rights reserved.

An EMMPRIN-γ-catenin-Nm23 complex drives ATP production and actomyosin contractility at endothelial junctions.

PubMed

Moreno, Vanessa; Gonzalo, Pilar; Gómez-Escudero, Jesús; Pollán, Ángela; Acín-Pérez, Rebeca; Breckenridge, Mark; Yáñez-Mó, María; Barreiro, Olga; Orsenigo, Fabrizio; Kadomatsu, Kenji; Chen, Christopher S; Enríquez, José A; Dejana, Elisabetta; Sánchez-Madrid, Francisco; Arroyo, Alicia G

2014-09-01

Cell-cell adhesions are important sites through which cells experience and resist forces. In endothelial cells, these forces regulate junction dynamics and determine endothelial barrier strength. We identify the Ig superfamily member EMMPRIN (also known as basigin) as a coordinator of forces at endothelial junctions. EMMPRIN localization at junctions correlates with endothelial junction strength in different mouse vascular beds. Accordingly, EMMPRIN-deficient mice show altered junctions and increased junction permeability. Lack of EMMPRIN alters the localization and function of VE-cadherin (also known as cadherin-5) by decreasing both actomyosin contractility and tugging forces at endothelial cell junctions. EMMPRIN ensures proper actomyosin-driven maturation of competent endothelial junctions by forming a molecular complex with γ-catenin (also known as junction plakoglobin) and Nm23 (also known as NME1), a nucleoside diphosphate kinase, thereby locally providing ATP to fuel the actomyosin machinery. These results provide a novel mechanism for the regulation of actomyosin contractility at endothelial junctions and might have broader implications in biological contexts such as angiogenesis, collective migration and tissue morphogenesis by coupling compartmentalized energy production to junction assembly. © 2014. Published by The Company of Biologists Ltd.

An EMMPRIN–γ-catenin–Nm23 complex drives ATP production and actomyosin contractility at endothelial junctions

PubMed Central

Moreno, Vanessa; Gonzalo, Pilar; Gómez-Escudero, Jesús; Pollán, Ángela; Acín-Pérez, Rebeca; Breckenridge, Mark; Yáñez-Mó, María; Barreiro, Olga; Orsenigo, Fabrizio; Kadomatsu, Kenji; Chen, Christopher S.; Enríquez, José A.; Dejana, Elisabetta; Sánchez-Madrid, Francisco; Arroyo, Alicia G.

2014-01-01

ABSTRACT Cell–cell adhesions are important sites through which cells experience and resist forces. In endothelial cells, these forces regulate junction dynamics and determine endothelial barrier strength. We identify the Ig superfamily member EMMPRIN (also known as basigin) as a coordinator of forces at endothelial junctions. EMMPRIN localization at junctions correlates with endothelial junction strength in different mouse vascular beds. Accordingly, EMMPRIN-deficient mice show altered junctions and increased junction permeability. Lack of EMMPRIN alters the localization and function of VE-cadherin (also known as cadherin-5) by decreasing both actomyosin contractility and tugging forces at endothelial cell junctions. EMMPRIN ensures proper actomyosin-driven maturation of competent endothelial junctions by forming a molecular complex with γ-catenin (also known as junction plakoglobin) and Nm23 (also known as NME1), a nucleoside diphosphate kinase, thereby locally providing ATP to fuel the actomyosin machinery. These results provide a novel mechanism for the regulation of actomyosin contractility at endothelial junctions and might have broader implications in biological contexts such as angiogenesis, collective migration and tissue morphogenesis by coupling compartmentalized energy production to junction assembly. PMID:24994937

Photoresponse of an electrically tunable ambipolar graphene infrared thermocouple.

PubMed

Herring, Patrick K; Hsu, Allen L; Gabor, Nathaniel M; Shin, Yong Cheol; Kong, Jing; Palacios, Tomás; Jarillo-Herrero, Pablo

2014-02-12

We explore the photoresponse of an ambipolar graphene infrared thermocouple at photon energies close to or below monolayer graphene's optical phonon energy and electrostatically accessible Fermi energy levels. The ambipolar graphene infrared thermocouple consists of monolayer graphene supported by an infrared absorbing material, controlled by two independent electrostatic gates embedded below the absorber. Using a scanning infrared laser microscope, we characterize these devices as a function of carrier type and carrier density difference controlled at the junction between the two electrostatic gates. On the basis of these measurements, conducted at both mid- and near-infrared wavelengths, the primary detection mechanism can be modeled as a thermoelectric response. By studying the effect of different infrared absorbers, we determine that the optical absorption and thermal conduction of the substrate play the dominant role in the measured photoresponse of our devices. These experiments indicate a path toward hybrid graphene thermal detectors for sensing applications such as thermography and chemical spectroscopy.

Engineering considerations for corrosion monitoring of gas gathering pipeline systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Braga, T.G.; Asperger, R.G.

1987-01-01

Proper corrosion monitoring of gas gathering pipelines requires a system review to determine the appropriate monitor locations and types of monitoring techniques. This paper develops and discusses a classification of conditions such as flow regime and gas composition. Also discussed are junction categories which, for corrosion monitoring, need to be considered from two points of view. The first is related to fluid flow in the line and the second is related corrosion inhibitor movement along the pipeline. The appropriate application of the various monitoring techniques such as coupons, hydrogen detectors, electrical resistance probe and linear polarization probes are discussed inmore » relation to flow regime and gas composition. Problems caused by semi-conduction from iron sulfide are considered. Advantages and disadvantages of fluid gathering methods such as pots and flow-through drips are discussed in relation to their reliability as on-line monitoring locations.« less

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

NASA Astrophysics Data System (ADS)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Probing the limits of the rigid-intensity-shift model in differential-phase-contrast scanning transmission electron microscopy

NASA Astrophysics Data System (ADS)

Clark, L.; Brown, H. G.; Paganin, D. M.; Morgan, M. J.; Matsumoto, T.; Shibata, N.; Petersen, T. C.; Findlay, S. D.

2018-04-01

The rigid-intensity-shift model of differential-phase-contrast imaging assumes that the phase gradient imposed on the transmitted probe by the sample causes the diffraction pattern intensity to shift rigidly by an amount proportional to that phase gradient. This behavior is seldom realized exactly in practice. Through a combination of experimental results, analytical modeling and numerical calculations, using as case studies electron microscope imaging of the built-in electric field in a p-n junction and nanoscale domains in a magnetic alloy, we explore the breakdown of rigid-intensity-shift behavior and how this depends on the magnitude of the phase gradient and the relative scale of features in the phase profile and the probe size. We present guidelines as to when the rigid-intensity-shift model can be applied for quantitative phase reconstruction using segmented detectors, and propose probe-shaping strategies to further improve the accuracy.

Josephson Parametric Reflection Amplifier with Integrated Directionality

NASA Astrophysics Data System (ADS)

Westig, M. P.; Klapwijk, T. M.

2018-06-01

A directional superconducting parametric amplifier in the GHz frequency range is designed and analyzed, suitable for low-power read-out of microwave kinetic inductance detectors employed in astrophysics and when combined with a nonreciprocal device at its input also for circuit quantum electrodynamics. It consists of a one-wavelength-long nondegenerate Josephson parametric reflection amplifier circuit. The device has two Josephson-junction oscillators, connected via a tailored impedance to an on-chip passive circuit which directs the in- to the output port. The amplifier provides a gain of 20 dB over a bandwidth of 220 MHz on the signal as well as on the idler portion of the amplified input and the total photon shot noise referred to the input corresponds to maximally approximately 1.3 photons per second per Hertz of bandwidth. We predict a factor of 4 increase in dynamic range compared to conventional Josephson parametric amplifiers.

Multiplying and detecting propagating microwave photons using inelastic Cooper-pair tunneling

NASA Astrophysics Data System (ADS)

Leppäkangas, Juha; Marthaler, Michael; Hazra, Dibyendu; Jebari, Salha; Albert, Romain; Blanchet, Florian; Johansson, Göran; Hofheinz, Max

2018-01-01

The interaction between propagating microwave fields and Cooper-pair tunneling across a DC-voltage-biased Josephson junction can be highly nonlinear. We show theoretically that this nonlinearity can be used to convert an incoming single microwave photon into an outgoing n -photon Fock state in a different mode. In this process, the electrostatic energy released in a Cooper-pair tunneling event is transferred to the outgoing Fock state, providing energy gain. The created multiphoton Fock state is frequency entangled and highly bunched. The conversion can be made reflectionless (impedance matched) so that all incoming photons are converted to n -photon states. With realistic parameters, multiplication ratios n >2 can be reached. By two consecutive multiplications, the outgoing Fock-state number can get sufficiently large to accurately discriminate it from vacuum with linear postamplification and power measurement. Therefore, this amplification scheme can be used as a single-photon detector without dead time.

Abundance and ultrastructural diversity of neuronal gap junctions in the OFF and ON sublaminae of the inner plexiform layer of rat and mouse retina.

PubMed

Kamasawa, N; Furman, C S; Davidson, K G V; Sampson, J A; Magnie, A R; Gebhardt, B R; Kamasawa, M; Yasumura, T; Zumbrunnen, J R; Pickard, G E; Nagy, J I; Rash, J E

2006-11-03

Neuronal gap junctions are abundant in both outer and inner plexiform layers of the mammalian retina. In the inner plexiform layer (IPL), ultrastructurally-identified gap junctions were reported primarily in the functionally-defined and anatomically-distinct ON sublamina, with few reported in the OFF sublamina. We used freeze-fracture replica immunogold labeling and confocal microscopy to quantitatively analyze the morphologies and distributions of neuronal gap junctions in the IPL of adult rat and mouse retina. Under "baseline" conditions (photopic illumination/general anesthesia), 649 neuronal gap junctions immunogold-labeled for connexin36 were identified in rat IPL, of which 375 were photomapped to OFF vs. ON sublaminae. In contrast to previous reports, the volume-density of gap junctions was equally abundant in both sublaminae. Five distinctive morphologies of gap junctions were identified: conventional crystalline and non-crystalline "plaques" (71% and 3%), plus unusual "string" (14%), "ribbon" (7%) and "reticular" (2%) forms. Plaque and reticular gap junctions were distributed throughout the IPL. However, string and ribbon gap junctions were restricted to the OFF sublamina, where they represented 48% of gap junctions in that layer. In string and ribbon junctions, curvilinear strands of connexons were dispersed over 5 to 20 times the area of conventional plaques having equal numbers of connexons. To define morphologies of gap junctions under different light-adaptation conditions, we examined an additional 1150 gap junctions from rats and mice prepared after 30 min of photopic, mesopic and scotopic illumination, with and without general anesthesia. Under these conditions, string and ribbon gap junctions remained abundant in the OFF sublamina and absent in the ON sublamina. Abundant gap junctions in the OFF sublamina of these two rodents with rod-dominant retinas revealed previously-undescribed but extensive pathways for inter-neuronal communication; and the wide dispersion of connexons in string and ribbon gap junctions suggests unique structural features of gap junctional coupling in the OFF vs. ON sublamina.

Nanoscale Phonon Transport as Probed with a Microfabricated Phonon Spectrometer for the Study of Nanoscale Energy Transport

NASA Astrophysics Data System (ADS)

Robinson, Richard; Otelaja, Obafemi; Hertzberg, Jared; Aksit, Mahmut; Stewart, Derek

2013-03-01

Phonons are the dominant heat carriers in dielectrics and a clear understanding of their behavior at the nanoscale is important for the development of efficient thermoelectric devices. In this work we show how acoustic phonon transport can be directly probed by the generation and detection of non-equilibrium phonons in microscale and nanoscale structures. Our technique employs a scalable method of fabricating phonon generators and detectors by forming Al-AlxOy-Al superconducting tunnel junctions on the sidewalls of a silicon mesa etched with KOH and an operating temperature of 0.3K. In the line-of-sight path along the width of these mesas, phonons with frequency ~100 GHz can propagate ballistically The phonons radiate into the mesa and are observed by the detector after passing through the mesa. We fabricated silicon nanosheets of width 100 to 300 nm along the ballistic path and observe surface scattering effects on phonon transmission when the characteristic length scale of a material is less than the phonon mean free path. We compare our results to the Casimir-Ziman theory. Our methods can be adapted for studying phonon transport in other nanostructures and will improve the understanding of phonon contribution to thermal transport. The work was supported in part by the National Science Foundation under Agreement No. DMR-1149036.

Quantum efficiency measurements of eROSITA pnCCDs

NASA Astrophysics Data System (ADS)

Ebermayer, Stefanie; Andritschke, Robert; Elbs, Johannes; Meidinger, Norbert; Strüder, Lothar; Hartmann, Robert; Gottwald, Alexander; Krumrey, Michael; Scholze, Frank

2010-07-01

For the eROSITA X-ray telescope, which is planned to be launched in 2012, detectors were developed and fabricated at the MPI Semiconductor Laboratory. The fully depleted, back-illuminated pnCCDs have an ultrathin pn-junction to improve the low-energy X-ray response function and quantum efficiency. The device thickness of 450 μm is fully sensitive to X-ray photons yielding high quantum efficiency of more than 90% at photon energies of 10 keV. An on-chip filter is deposited on top of the entrance window to suppress visible and UV light which would interfere with the X-ray observations. The pnCCD type developed for the eROSITA telescope was characterized in terms of quantum efficiency and spectral response function. The described measurements were performed in 2009 at the synchrotron radiation sources BESSY II and MLS as cooperation between the MPI Semiconductor Laboratory and the Physikalisch-Technische Bundesanstalt (PTB). Quantum efficiency measurements over a wide range of photon energies from 3 eV to 11 keV as well as spectral response measurements are presented. For X-ray energies from 3 keV to 10 keV the quantum efficiency of the CCD including on-chip filter is shown to be above 90% with an attenuation of visible light of more than five orders of magnitude. A detector response model is described and compared to the measurements.

Performance of mid-wave T2SL detectors with heterojunction barriers

NASA Astrophysics Data System (ADS)

Asplund, Carl; Marcks von Würtemberg, Rickard; Lantz, Dan; Malm, Hedda; Martijn, Henk; Plis, Elena; Gautam, Nutan; Krishna, Sanjay

2013-07-01

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10-6 A/cm2 at -0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p-i-n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

NASA Technical Reports Server (NTRS)

Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

1990-01-01

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

DOEpatents

Chang, Y. Austin; Yang, Jianhua Joshua

2008-11-11

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Possible involvement of gap junctions in the barrier function of tight junctions of brain and lung endothelial cells.

PubMed

Nagasawa, Kunihiko; Chiba, Hideki; Fujita, Hiroki; Kojima, Takashi; Saito, Tsuyoshi; Endo, Toshiaki; Sawada, Norimasa

2006-07-01

Gap-junction plaques are often observed with tight-junction strands of vascular endothelial cells but the molecular interaction and functional relationships between these two junctions remain obscure. We herein show that gap-junction proteins connexin40 (Cx40) and Cx43 are colocalized and coprecipitated with tight-junction molecules occludin, claudin-5, and ZO-1 in porcine blood-brain barrier (BBB) endothelial cells. Gap junction blockers 18beta-glycyrrhetinic acid (18beta-GA) and oleamide (OA) did not influence expression of Cx40, Cx43, occludin, claudin-5, junctional adhesion molecule (JAM)-A, JAM-B, JAM-C, or ZO-1, or their subcellular localization in the porcine BBB endothelial cells. In contrast, these gap-junction blocking agents inhibited the barrier function of tight junctions in cells, determined by measurement of transendothelial electrical resistance and paracellular flux of mannitol and inulin. 18beta-GA also significantly reduced the barrier property in rat lung endothelial (RLE) cells expressing doxycycline-induced claudin-1, but did not change the interaction between Cx43 and either claudin-1 or ZO-1, nor their expression levels or subcellular distribution. These findings suggest that Cx40- and/or Cx43-based gap junctions might be required to maintain the endothelial barrier function without altering the expression and localization of the tight-junction components analyzed. Copyright 2006 Wiley-Liss, Inc.

Research and develop locking design for NJDOT junction boxes : final report, April 2009.

DOT National Transportation Integrated Search

2009-04-01

The report outlines the guidelines for securing electrical junction box covers to the junction box to prevent vandalism. The report provides details drawings that show various methods for securing the junction box cover to the junction box.

Four-junction superconducting circuit

PubMed Central

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Intercellular junctions between palisade nerve endings and outer root sheath cells of rat vellus hairs.

PubMed

Kaidoh, T; Inoué, T

2000-05-15

Hair follicles have a longitudinal set of sensory nerve endings called palisade nerve endings (PN). We examined the junctional structures between the PN and outer root sheath (ORS) cells of hair follicles in the rat external ear. Transmission electron microscopy of serial thin sections showed that the processes of the ORS cells penetrated the basal lamina of the hair follicle, forming intercellular junctions with the PN (PN-ORS junctions). Two types of junctions were found: junctions between nerve endings and ORS cells (N-ORS junctions) and those between Schwann cell processes and ORS cells (S-ORS junctions). The N-ORS junctions had two subtypes: 1) a short process or small eminence of the ORS cell was attached to the nerve ending (type I); or 2) a process of the ORS cell was invaginated into the nerve ending (type II). The S-ORS junctions also had two subtypes: 1) a short process or small eminence of the ORS cell was abutted on the Schwann cell process (type I); or 2) a process of the ORS cell was invaginated into the Schwann cell process (type II). Vesicles, coated pits, coated vesicles, and endosomes were sometimes seen in nerve endings, Schwann cells, and ORS cells near the junctions. Computer-aided reconstruction of the serial thin sections displayed the three-dimensional structure of these junctions. These results suggested that the PN-ORS junctions provided direct relationships between the PN and ORS in at least four different patterns. The discovery of these junctions shows the PN-ORS relationship to be closer than previously realized. We speculate that these junctions may have roles in attachment of the PN to the ORS, contributing to increases in the sensitivity of the PN, and in chemical signaling between the PN and ORS.

Superstrate sub-cell voltage-matched multijunction solar cells

DOEpatents

Mascarenhas, Angelo; Alberi, Kirstin

2016-03-15

Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

Effect of solar-cell junction geometry on open-circuit voltage

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, Hong Q.; Reinhardt, Kitt C.

1999-01-01

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, H.Q.; Reinhardt, K.C.

1999-08-31

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

[Influence of Cx26/Cx32 gap junction channel on antineoplastic effect of etoposide in Hela cells].

PubMed

Tong, Xu-Hui; Dong, Shu-Ying; Jiang, Guo-Jun; Fan, Gao-Fu

2012-03-01

To observe the influence of Cx26/Cx32 gap junction channel on the antineoplastic effect of etoposide in Hela cervical cancer cells. Fluorescence trace was used to assay the gap junction intercellular communication mediated by Cx26/Cx32 in Hela cells and its functional modulation by the pharmacological agents (oleamide, retinoid acid). A standard colony-forming assay was applied to determine the cell growth-inhibiting effect of etoposide in Hela cells with functional modulation of the gap junction. Hoechst 33258 staining was used to assess the changes in etoposide-induced apoptosis of Hela cells with altered gap junction functions. Oleamide markedly decreased while retinoid acid obviously increased the gap junction function in Hela cells. Standard colony-forming assay showed that etoposide produced a lowered antiproliferative effect in Hela cells with reduced gap junction and an increased antiproliferative effect in cells with enhanced gap junction function. In cells with a reduced gap junction function, etoposide induced a lowered apoptosis rate, which increased obviously in cells with an enhanced gap junction function. The antineoplastic effect of etoposide is reduced in Hela cells with a decreased gap junction intercellular communication mediated by Cx26/Cx32 and is enhanced in cells with an increased gap junction intercellular communication.

Effects of 18beta-glycyrrhetinic acid on the junctional complex and steroidogenesis in rat adrenocortical cells.

PubMed

Huang, Shih-Horng; Wu, Jiahn-Chun; Hwang, Ra-Der; Yeo, Hui-Lin; Wang, Seu-Mei

2003-09-01

Cellular junctions play important roles in cell differentiation, signal transduction, and cell function. This study investigated their function in steroid secretion by adrenal cells. Immunofluorescence staining revealed the presence of gap junctions and adherens junctions between adrenal cells. The major gap junction protein, connexin43, was seen as a linear dotted pattern of the typical gap junction plaques, in contrast to alpha-, beta-, and gamma-catenin, which were seen as continuous, linear staining of cell-cell adherens junction. Treatment with 18beta-glycyrrhetinic acid, a gap junction inhibitor, reduced the immunoreactivity of these proteins in a time- and dose-dependent manner, and caused the gap junction and adherens junction to separate longitudinally from the cell-cell contact sites, indicating the structural interdependency of these two junctions. Interestingly, 18beta-glycyrrhetinic acid stimulated a two- to three-fold increase in steroid production in these adrenal cells lacking intact cell junctions. These data raise the question of the necessity for cell communication for the endocrine function of adrenal cells. Pharmacological analyses indicated that the steroidogenic effect of 18beta-glycyrrhetinic acid was partially mediated by extracellular signal-related kinase and calcium/calmodulin-dependent kinase, a pathway distinct from the protein kinase A signaling pathway already known to mediate steroidogenesis in adrenal cells. Copyright 2003 Wiley-Liss, Inc.

Gap junctions modulate glioma invasion by direct transfer of microRNA.

PubMed

Hong, Xiaoting; Sin, Wun Chey; Harris, Andrew L; Naus, Christian C

2015-06-20

The invasiveness of high-grade glioma is the primary reason for poor survival following treatment. Interaction between glioma cells and surrounding astrocytes are crucial to invasion. We investigated the role of gap junction mediated miRNA transfer in this context. By manipulating gap junctions with a gap junction inhibitor, siRNAs, and a dominant negative connexin mutant, we showed that functional glioma-glioma gap junctions suppress glioma invasion while glioma-astrocyte and astrocyte-astrocyte gap junctions promote it in an in vitro transwell invasion assay. After demonstrating that glioma-astrocyte gap junctions are permeable to microRNA, we compared the microRNA profiles of astrocytes before and after co-culture with glioma cells, identifying specific microRNAs as candidates for transfer through gap junctions from glioma cells to astrocytes. Further analysis showed that transfer of miR-5096 from glioma cells to astrocytes is through gap junctions; this transfer is responsible, in part, for the pro-invasive effect. Our results establish a role for glioma-astrocyte gap junction mediated microRNA signaling in modulation of glioma invasive behavior, and that gap junction coupling among astrocytes magnifies the pro-invasive signaling. Our findings reveal the potential for therapeutic interventions based on abolishing alteration of stromal cells by tumor cells via manipulation of microRNA and gap junction channel activity.

Gap junctions modulate glioma invasion by direct transfer of microRNA

PubMed Central

Hong, Xiaoting; Sin, Wun Chey; Harris, Andrew L.; Naus, Christian C.

2015-01-01

The invasiveness of high-grade glioma is the primary reason for poor survival following treatment. Interaction between glioma cells and surrounding astrocytes are crucial to invasion. We investigated the role of gap junction mediated miRNA transfer in this context. By manipulating gap junctions with a gap junction inhibitor, siRNAs, and a dominant negative connexin mutant, we showed that functional glioma-glioma gap junctions suppress glioma invasion while glioma-astrocyte and astrocyte-astrocyte gap junctions promote it in an in vitro transwell invasion assay. After demonstrating that glioma-astrocyte gap junctions are permeable to microRNA, we compared the microRNA profiles of astrocytes before and after co-culture with glioma cells, identifying specific microRNAs as candidates for transfer through gap junctions from glioma cells to astrocytes. Further analysis showed that transfer of miR-5096 from glioma cells to astrocytes is through gap junctions; this transfer is responsible, in part, for the pro-invasive effect. Our results establish a role for glioma-astrocyte gap junction mediated microRNA signaling in modulation of glioma invasive behavior, and that gap junction coupling among astrocytes magnifies the pro-invasive signaling. Our findings reveal the potential for therapeutic interventions based on abolishing alteration of stromal cells by tumor cells via manipulation of microRNA and gap junction channel activity. PMID:25978028

CSReport: A New Computational Tool Designed for Automatic Analysis of Class Switch Recombination Junctions Sequenced by High-Throughput Sequencing.

PubMed

Boyer, François; Boutouil, Hend; Dalloul, Iman; Dalloul, Zeinab; Cook-Moreau, Jeanne; Aldigier, Jean-Claude; Carrion, Claire; Herve, Bastien; Scaon, Erwan; Cogné, Michel; Péron, Sophie

2017-05-15

B cells ensure humoral immune responses due to the production of Ag-specific memory B cells and Ab-secreting plasma cells. In secondary lymphoid organs, Ag-driven B cell activation induces terminal maturation and Ig isotype class switch (class switch recombination [CSR]). CSR creates a virtually unique IgH locus in every B cell clone by intrachromosomal recombination between two switch (S) regions upstream of each C region gene. Amount and structural features of CSR junctions reveal valuable information about the CSR mechanism, and analysis of CSR junctions is useful in basic and clinical research studies of B cell functions. To provide an automated tool able to analyze large data sets of CSR junction sequences produced by high-throughput sequencing (HTS), we designed CSReport, a software program dedicated to support analysis of CSR recombination junctions sequenced with a HTS-based protocol (Ion Torrent technology). CSReport was assessed using simulated data sets of CSR junctions and then used for analysis of Sμ-Sα and Sμ-Sγ1 junctions from CH12F3 cells and primary murine B cells, respectively. CSReport identifies junction segment breakpoints on reference sequences and junction structure (blunt-ended junctions or junctions with insertions or microhomology). Besides the ability to analyze unprecedentedly large libraries of junction sequences, CSReport will provide a unified framework for CSR junction studies. Our results show that CSReport is an accurate tool for analysis of sequences from our HTS-based protocol for CSR junctions, thereby facilitating and accelerating their study. Copyright © 2017 by The American Association of Immunologists, Inc.

Regulation of gap junctional charge selectivity in cells coexpressing connexin 40 and connexin 43.

PubMed

Heyman, Nathanael S; Kurjiaka, David T; Ek Vitorin, Jose F; Burt, Janis M

2009-07-01

Expression of connexin 40 (Cx40) and Cx43 in cardiovascular tissues varies as a function of age, injury, and development with unknown consequences on the selectivity of junctional communication and its acute regulation. We investigated the PKC-dependent regulation of charge selectivity in junctions composed of Cx43, Cx40, or both by simultaneous assessment of junctional permeance rate constants (B(dye)) for dyes of similar size but opposite charge, N,N,N-trimethyl-2-[methyl-(7-nitro-2,1,3-benzoxadiol-4-yl)amino]ethanaminium (NBD-M-TMA; +1) and Alexa 350 (-1). The ratio of dye rate constants (B(NBD-M-TMA)/B(Alexa 350)) indicated that Cx40 junctions are cation selective (10.7 +/- 0.5), whereas Cx43 junction are nonselective (1.22 +/- 0.14). In coexpressing cells, a broad range of junctional selectivities was observed with mean cation selectivity increasing as the Cx40 to Cx43 expression ratio increased. PKC activation reduced or eliminated dye permeability of Cx43 junctions without altering their charge selectivity, had no effect on either permeability or charge selectivity of Cx40 junctions, and significantly increased the cation selectivity of junctions formed by coexpressing cells (approaching charge selectivity of Cx40 junctions). Junctions composed of Cx43 truncated at residue 257 (Cx43tr) were also not charge selective, but when Cx43tr was coexpressed with Cx40, a broad range of junctional selectivities that was unaffected by PKC activation was observed. Thus, whereas the charge selectivities of homomeric/homotypic Cx43 and Cx40 junctions appear invariant, the selectivities of junctions formed by cells coexpressing Cx40 and Cx43 vary considerably, reflecting both their relative expression levels and phosphorylation-dependent regulation. Such regulation could represent a mechanism by which coexpressing cells such as vascular endothelium and atrial cells regulate acutely the selective intercellular communication mediated by their gap junctions.

Method of making high breakdown voltage semiconductor device

DOEpatents

Arthur, Stephen D.; Temple, Victor A. K.

1990-01-01

A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

Methods for the fabrication of thermally stable magnetic tunnel junctions

DOEpatents

Chang, Y Austin [Middleton, WI; Yang, Jianhua J [Madison, WI; Ladwig, Peter F [Hutchinson, MN

2009-08-25

Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

Possible Involvement of Tight Junctions, Extracellular Matrix and Nuclear Receptors in Epithelial Differentiation

PubMed Central

Ichikawa-Tomikawa, Naoki; Sugimoto, Kotaro; Satohisa, Seiro; Nishiura, Keisuke; Chiba, Hideki

2011-01-01

Tight junctions are intercellular junctions localized at the most apical end of the lateral plasma membrane. They consist of four kinds of transmembrane proteins (occludin, claudins, junctional adhesion molecules, and tricellulin) and huge numbers of scaffolding proteins and contribute to the paracellular barrier and fence function. The mutation and deletion of these proteins impair the functions of tight junctions and cause various human diseases. In this paper, we provide an overview of recent studies on transmembrane proteins of tight junctions and highlight the functional significance of tight junctions, extracellular matrix, and nuclear receptors in epithelial differentiation. PMID:22162632

Gap junction- and hemichannel-independent actions of connexins.

PubMed

Jiang, Jean X; Gu, Sumin

2005-06-10

Connexins have been known to be the protein building blocks of gap junctions and mediate cell-cell communication. In contrast to the conventional dogma, recent evidence suggests that in addition to forming gap junction channels, connexins possess gap junction-independent functions. One important gap junction-independent function for connexins is to serve as the major functional component for hemichannels, the un-apposed halves of gap junctions. Hemichannels, as independent functional units, play roles that are different from that of gap junctions in the cell. The other functions of connexins appear to be gap junction- and hemichannel-independent. Published studies implicate the latter functions of connexins in cell growth, differentiation, tumorigenicity, injury, and apoptosis, although the mechanistic aspects of these actions remain largely unknown. In this review, gap junction- and hemichannel-independent functions of connexins are summarized, and the molecular mechanisms underlying these connexin functions are speculated and discussed.

Atomic-scaled characterization of graphene PN junctions

NASA Astrophysics Data System (ADS)

Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

Molecular mechanisms regulating formation, trafficking and processing of annular gap junctions.

PubMed

Falk, Matthias M; Bell, Cheryl L; Kells Andrews, Rachael M; Murray, Sandra A

2016-05-24

Internalization of gap junction plaques results in the formation of annular gap junction vesicles. The factors that regulate the coordinated internalization of the gap junction plaques to form annular gap junction vesicles, and the subsequent events involved in annular gap junction processing have only relatively recently been investigated in detail. However it is becoming clear that while annular gap junction vesicles have been demonstrated to be degraded by autophagosomal and endo-lysosomal pathways, they undergo a number of additional processing events. Here, we characterize the morphology of the annular gap junction vesicle and review the current knowledge of the processes involved in their formation, fission, fusion, and degradation. In addition, we address the possibility for connexin protein recycling back to the plasma membrane to contribute to gap junction formation and intercellular communication. Information on gap junction plaque removal from the plasma membrane and the subsequent processing of annular gap junction vesicles is critical to our understanding of cell-cell communication as it relates to events regulating development, cell homeostasis, unstable proliferation of cancer cells, wound healing, changes in the ischemic heart, and many other physiological and pathological cellular phenomena.

ABUNDANCE AND ULTRASTRUCTURAL DIVERSITY OF NEURONAL GAP JUNCTIONS IN THE OFF AND ON SUBLAMINAE OF THE INNER PLEXIFORM LAYER OF RAT AND MOUSE RETINA

PubMed Central

KAMASAWA, N.; FURMAN, C. S.; DAVIDSON, K. G. V.; SAMPSON, J. A.; MAGNIE, A. R.; GEBHARDT, B. R.; KAMASAWA, M.; YASUMURA, T.; ZUMBRUNNEN, J. R.; PICKARD, G. E.; NAGY, J. I.; RASH, J. E.

2007-01-01

Neuronal gap junctions are abundant in both outer and inner plexiform layers of the mammalian retina. In the inner plexiform layer (IPL), ultrastructurally-identified gap junctions were reported primarily in the functionally-defined and anatomically-distinct ON sublamina, with few reported in the OFF sublamina. We used freeze-fracture replica immunogold labeling and confocal microscopy to quantitatively analyze the morphologies and distributions of neuronal gap junctions in the IPL of adult rat and mouse retina. Under “baseline” conditions (photopic illumination/general anesthesia), 649 neuronal gap junctions immunogold-labeled for connexin36 were identified in rat IPL, of which 375 were photomapped to OFF vs. ON sublaminae. In contrast to previous reports, the volume-density of gap junctions was equally abundant in both sublaminae. Five distinctive morphologies of gap junctions were identified: conventional crystalline and non-crystalline “plaques” (71% and 3%), plus unusual “string” (14%), “ribbon” (7%) and “reticular” (2%) forms. Plaque and reticular gap junctions were distributed throughout the IPL. However, string and ribbon gap junctions were restricted to the OFF sublamina, where they represented 48% of gap junctions in that layer. In string and ribbon junctions, curvilinear strands of connexons were dispersed over 5 to 20 times the area of conventional plaques having equal numbers of connexons. To define morphologies of gap junctions under different light-adaptation conditions, we examined an additional 1150 gap junctions from rats and mice prepared after 30 min of photopic, mesopic and scotopic illumination, with and without general anesthesia. Under these conditions, string and ribbon gap junctions remained abundant in the OFF sublamina and absent in the ON sublamina. Abundant gap junctions in the OFF sublamina of these two rodents with rod-dominant retinas revealed previously-undescribed but extensive pathways for inter-neuronal communication; and the wide dispersion of connexons in string and ribbon gap junctions suggests unique structural features of gap junctional coupling in the OFF vs. ON sublamina. PMID:17010526

Zinc Alloys for the Fabrication of Semiconductor Devices

NASA Technical Reports Server (NTRS)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and visible transmitters and detectors, high-frequency radar, biomedical imaging, chemical compound identification, molecular identification and structure, gas sensors, imaging systems, and for the fundamental studies of atoms, molecules, gases, vapors, and solids.

Signaling from the Podocyte Intercellular Junction to the Actin Cytoskeleton

PubMed Central

George, Britta; Holzman, Lawrence B.

2012-01-01

Observations of hereditary glomerular disease support the contention that podocyte intercellular junction proteins are essential for junction formation and maintenance. Genetic deletion of most of these podocyte intercellular junction proteins results in foot process effacement and proteinuria. This review focuses on the current understanding of molecular mechanisms by which podocyte intercellular junction proteins such as the Nephrin-Neph1-Podocin receptor complex coordinate cytoskeletal dynamics and thus intercellular junction formation, maintenance and injury-dependent remodeling. PMID:22958485

Visualizing the effect of dynamin inhibition on annular gap vesicle formation and fission

PubMed Central

Nickel, Beth; Boller, Marie; Schneider, Kimberly; Shakespeare, Teresa; Gay, Vernon; Murray, Sandra A.

2013-01-01

Summary Although gap junction plaque assembly has been extensively studied, mechanisms involved in plaque disassembly are not well understood. Disassembly involves an internalization process in which annular gap junction vesicles are formed. These vesicles undergo fission, but the molecular machinery needed for these fissions has not been described. The mechanoenzyme dynamin has been previously demonstrated to play a role in gap junction plaque internalization. To investigate the role of dynamin in annular gap junction vesicle fission, immunocytochemical, time-lapse and transmission electron microscopy were used to analyze SW-13 adrenocortical cells in culture. Dynamin was demonstrated to colocalize with gap junction plaques and vesicles. Dynamin inhibition, by siRNA knockdown or treatment with the dynamin GTPase inhibitor dynasore, increased the number and size of gap junction ‘buds’ suspended from the gap junction plaques. Buds, in control populations, were frequently released to form annular gap junction vesicles. In dynamin-inhibited populations, the buds were larger and infrequently released and thus fewer annular gap junction vesicles were formed. In addition, the number of annular gap junction vesicle fissions per hour was reduced in the dynamin-inhibited populations. We believe this to be the first report addressing the details of annular gap junction vesicle fissions and demonstrating a role of dynamin in this process. This information is crucial for elucidating the relationship between gap junctions, membrane regulation and cell behavior. PMID:23591819

Role of heteromeric gap junctions in the cytotoxicity of cisplatin.

PubMed

Tong, Xuhui; Dong, Shuying; Yu, Meiling; Wang, Qin; Tao, Liang

2013-08-09

In several systems, the presence of gap junctions made of a single connexin has been shown to enhance the cytotoxicity of cisplatin. However, most gap junction channels in vivo appear to be heteromeric (composed of more than one connexin isoform). Here we explore in HeLa cells the cytotoxicity to cisplatin that is enhanced by heteromeric gap junctions composed of Cx26 and Cx32, which have been shown to be more selective among biological permeants than the corresponding homomeric channels. We found that survival and subsequent proliferation of cells exposed to cisplatin were substantially reduced when gap junctions were present than when there were no gap junctions. Functional inhibition of gap junctions by oleamide enhanced survival/proliferation, and enhancement of gap junctions by retinoic acid decreased survival/proliferation. These effects occurred only in high density cultures, and the treatments were without effect when there was no opportunity for gap junction formation. The presence of functional gap junctions enhanced apoptosis as reflected in markers of both early-stage and late-stage apoptosis. Furthermore, analysis of caspases 3, 8 and 9 showed that functional gap junctions specifically induced apoptosis by the mitochondrial pathway. These results demonstrate that heteromeric Cx26/Cx32 gap junctions increase the cytotoxicity of cisplatin by induction of apoptosis via the mitochondrial pathway. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Visualizing the effect of dynamin inhibition on annular gap vesicle formation and fission.

PubMed

Nickel, Beth; Boller, Marie; Schneider, Kimberly; Shakespeare, Teresa; Gay, Vernon; Murray, Sandra A

2013-06-15

Although gap junction plaque assembly has been extensively studied, mechanisms involved in plaque disassembly are not well understood. Disassembly involves an internalization process in which annular gap junction vesicles are formed. These vesicles undergo fission, but the molecular machinery needed for these fissions has not been described. The mechanoenzyme dynamin has been previously demonstrated to play a role in gap junction plaque internalization. To investigate the role of dynamin in annular gap junction vesicle fission, immunocytochemical, time-lapse and transmission electron microscopy were used to analyze SW-13 adrenocortical cells in culture. Dynamin was demonstrated to colocalize with gap junction plaques and vesicles. Dynamin inhibition, by siRNA knockdown or treatment with the dynamin GTPase inhibitor dynasore, increased the number and size of gap junction 'buds' suspended from the gap junction plaques. Buds, in control populations, were frequently released to form annular gap junction vesicles. In dynamin-inhibited populations, the buds were larger and infrequently released and thus fewer annular gap junction vesicles were formed. In addition, the number of annular gap junction vesicle fissions per hour was reduced in the dynamin-inhibited populations. We believe this to be the first report addressing the details of annular gap junction vesicle fissions and demonstrating a role of dynamin in this process. This information is crucial for elucidating the relationship between gap junctions, membrane regulation and cell behavior.

A WAVE2–Arp2/3 actin nucleator apparatus supports junctional tension at the epithelial zonula adherens

PubMed Central

Verma, Suzie; Han, Siew Ping; Michael, Magdalene; Gomez, Guillermo A.; Yang, Zhe; Teasdale, Rohan D.; Ratheesh, Aparna; Kovacs, Eva M.; Ali, Radiya G.; Yap, Alpha S.

2012-01-01

The epithelial zonula adherens (ZA) is a specialized adhesive junction where actin dynamics and myosin-driven contractility coincide. The junctional cytoskeleton is enriched in myosin II, which generates contractile force to support junctional tension. It is also enriched in dynamic actin filaments, which are replenished by ongoing actin assembly. In this study we sought to pursue the relationship between actin assembly and junctional contractility. We demonstrate that WAVE2–Arp2/3 is a major nucleator of actin assembly at the ZA and likely acts in response to junctional Rac signaling. Furthermore, WAVE2–Arp2/3 is necessary for junctional integrity and contractile tension at the ZA. Maneuvers that disrupt the function of either WAVE2 or Arp2/3 reduced junctional tension and compromised the ability of cells to buffer side-to-side forces acting on the ZA. WAVE2–Arp2/3 disruption depleted junctions of both myosin IIA and IIB, suggesting that dynamic actin assembly may support junctional tension by facilitating the local recruitment of myosin. PMID:23051739

A WAVE2-Arp2/3 actin nucleator apparatus supports junctional tension at the epithelial zonula adherens.

PubMed

Verma, Suzie; Han, Siew Ping; Michael, Magdalene; Gomez, Guillermo A; Yang, Zhe; Teasdale, Rohan D; Ratheesh, Aparna; Kovacs, Eva M; Ali, Radiya G; Yap, Alpha S

2012-12-01

The epithelial zonula adherens (ZA) is a specialized adhesive junction where actin dynamics and myosin-driven contractility coincide. The junctional cytoskeleton is enriched in myosin II, which generates contractile force to support junctional tension. It is also enriched in dynamic actin filaments, which are replenished by ongoing actin assembly. In this study we sought to pursue the relationship between actin assembly and junctional contractility. We demonstrate that WAVE2-Arp2/3 is a major nucleator of actin assembly at the ZA and likely acts in response to junctional Rac signaling. Furthermore, WAVE2-Arp2/3 is necessary for junctional integrity and contractile tension at the ZA. Maneuvers that disrupt the function of either WAVE2 or Arp2/3 reduced junctional tension and compromised the ability of cells to buffer side-to-side forces acting on the ZA. WAVE2-Arp2/3 disruption depleted junctions of both myosin IIA and IIB, suggesting that dynamic actin assembly may support junctional tension by facilitating the local recruitment of myosin.

Disruption of gap junctions attenuates aminoglycoside-elicited renal tubular cell injury.

PubMed

Yao, Jian; Huang, Tao; Fang, Xin; Chi, Yuan; Zhu, Ying; Wan, Yigang; Matsue, Hiroyuki; Kitamura, Masanori

2010-08-01

Gap junctions play important roles in the regulation of cell phenotype and in determining cell survival after various insults. Here, we investigated the role of gap junctions in aminoglycoside-induced injury to renal tubular cells. Two tubular epithelial cell lines NRK-E52 and LLC-PK1 were compared for gap junction protein expression and function by immunofluorescent staining, Western blot and dye transfer assay. Cell viability after exposure to aminoglycosides was evaluated by WST assay. Gap junctions were modulated by transfection of the gap junction protein, connexin 43 (Cx43), use of Cx43 siRNA and gap junction inhibitors. NRK-E52 cells expressed abundant Cx43 and were functionally coupled by gap junctional intercellular communication (GJIC). Exposure of NRK-E52 cells to aminoglycosides, G418 and hygromycin, increased Cx43 phosphorylation and GJIC. The aminoglycosides also decreased cell viability that was prevented by gap junction inhibitors and Cx43 siRNA. LLC-PK1 cells were gap junction-deficient and resistant to aminoglycoside-induced cytotoxicity. Over-expression of a wild-type Cx43 converted LLC-PK1 cells to a drug-sensitive phenotype. The gap junction inhibitor alpha-glycyrrhetinic acid (alpha-GA) activated Akt in NRK-E52 cells. Inhibition of the Akt pathway enhanced cell toxicity to G418 and abolished the protective effects of alpha-GA. In addition, gentamycin-elicited cytotoxicity in NRK-E52 cells was also significantly attenuated by alpha-GA. Gap junctions contributed to the cytotoxic effects of aminoglycosides. Modulation of gap junctions could be a promising approach for prevention and treatment of aminoglycoside-induced renal tubular cell injury.

Interaction of Light with Metallized Ultrathin Silicon Membrane

NASA Astrophysics Data System (ADS)

Shome, Krishanu

Freestanding metallized structures, a few tens of nanometer thick, show promise in creating flow-through sensors, single molecule detectors and novel solar cells. In this thesis we study test structures that are a step towards creating such devices. Finite- difference time-domain simulations have been used to understand and predict the interaction of light with such devices. Porous nanocrystalline silicon membrane is a novel freestanding layer structure that has been used as a platform to fabricate and study sensors and novel slot nanohole devices. Optical mode studies of the sensing structures, together with the method of fabrication inspired the creation of ultrathin freestanding hydrogenated amorphous silicon p-i-n junctions solar cells. All the freestanding structures used in this thesis are just a few tens of nanometers in thicknesses. In the first part of the thesis the sensing properties of the metallized porous nanocrystalline structure are studied. The surprising blueshift associated with the sensing peak is observed experimentally and predicted theoretically with the help of simulations. Polarization dependence of the membranes is predicted and confirmed for angled deposition of metal on the membranes. In the next part, a novel slot structure is fabricated and modeled to study the slot effect in nanohole metal-insulator-metal structures. Atomic layer deposition of alumina is used to conformally deposit alumina within the nanohole to create the slot structure. Simulation models were used to calculate the lowest modal volume of 4x10-5 mum3 for an optimized structure. In the last part of the thesis, freestanding solar cells are fabricated by effectively replacing the porous nanocrystalline silicon layer of the membranes with a hydrogenated amorphous silicon p-i-n junction with metal layers on both sides of the p-i-n junction. The metal layers act both as electrical contacts as well as mirrors for a Fabry Perot cavity resonator. This helps in tuning the absorption profile of the solar cell to target near infrared part of the solar spectrum. A correspondence is found between the simulation absorption results with the experimental spectral response of the solar cells. This helps in designing metallized solar cells with ITO layer to improve absorption and hence the efficiency.

Coincidence of features of emitted THz electromagnetic wave power form a single Josephson junction and different current components

NASA Astrophysics Data System (ADS)

Hamdipour, Mohammad

2017-12-01

By applying a voltage to a Josephson junction, the charge in superconducting layers (S-layers) will oscillate. Wavelength of the charge oscillations in S-layers is related to external current in junction, by increasing the external current, the wavelength will decrease which cause in some currents the wavelength be incommensurate with width of junction, so the CVC shows Fiske like steps. External current throwing along junction has some components, resistive, capacitive and superconducting current, beside these currents there is a current in lateral direction of junction, (x direction). On the other hand, the emitted electromagnetic wave power in THz region is related to AC component of electric field in junction, which itself is related to charge density in S-layers, which is related to currents in the system. So we expect that features of variation of current components reflect the features of emitted THz power form junction. Here we study in detail the superconductive current in a long Josephson junction (JJ), the current voltage characteristics (CVC) of junction and emitted THz power from the system. Then we compare the results. Comparing the results we see that there is a good qualitative coincidence in features of emitted THz power and supercurrent in junction.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1992-01-01

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

Specific Cx43 phosphorylation events regulate gap junction turnover in vivo

PubMed Central

Solan, Joell L.; Lampe, Paul D.

2014-01-01

Gap junctions, composed of proteins from the connexin gene family, are highly dynamic structures that are regulated by kinase-mediated signaling pathways and interactions with other proteins. Phosphorylation of Connexin43 (Cx43) at different sites controls gap junction assembly, gap junction size and gap junction turnover. Here we present a model describing how Akt, mitogen activated protein kinase (MAPK) and src kinase coordinate to regulate rapid turnover of gap junctions. Specifically, Akt phosphorylates Cx43 at S373 eliminating interaction with zona occludens-1 (ZO-1) allowing gap junctions to enlarge. Then MAPK and src phosphorylate Cx43 to initiate turnover. We integrate published data with new data to test and refine this model. Finally, we propose that differential coordination of kinase activation and Cx43 phosphorylation controls the specific routes of disassembly, e.g., annular junction formation or gap junctions can potentially “unzip” and be internalized/endocytosed into the cell that produced each connexin. PMID:24508467

Nanotube junctions

DOEpatents

Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

2004-12-28

The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

Nanotube junctions

DOEpatents

Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon Sheng; Zettl, Alexander Karlwalter

2003-01-01

The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping

NASA Astrophysics Data System (ADS)

Park, Jinho; Lee, Jae Hyeong; Lee, Gil-Ho; Takane, Yositake; Imura, Ken-Ichiro; Taniguchi, Takashi; Watanabe, Kenji; Lee, Hu-Jong

2018-02-01

We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current Ic . The product of Ic and the normal-state junction resistance RN , normalized by the zero-temperature gap energy Δ0 of the superconducting electrodes, turns out to be exceptionally large close to 2, an indication of strong Josephson coupling in the SB junction limit. However, Ic shows a temperature dependence that is inconsistent with the conventional short-junction-like behavior based on the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the effects of inhomogeneous carrier doping in graphene near the superconducting contacts, although the junction is in fact in the short-junction limit.

Correlation between the graft-host junction of penetrating keratoplasty by anterior segment-optical coherence tomography and the magnitude of postoperative astigmatism.

PubMed

Nassar, Ghada Azab; Arfeen, Shaimaa Abd El Salam

2017-07-01

This study aimed to evaluate the alignment pattern of the graft-host junction after penetrating keratoplasty (PK) by anterior segment-optical coherence tomography (AS-OCT) and to correlate this pattern with the magnitude of postoperative astigmatism. This retrospective observational study was carried out on forty patients who underwent PK from February 2013 to August 2014. AS-OCT was performed, and the graft-host junctions were classified into well-apposed junction, malapposed junction, and equally apposed junction. Mal-apposition is subdivided into gap and protrusion. The correlations between clinical characteristics, wound profiles from the AS-OCT, and the magnitude of postoperative astigmatism by Sirius camera (Costruzione Strumenti Oftalmici [CSO], Florence, Italy (CSO, Sirius), were analyzed. Graft-host junctions from forty patients were analyzed; 18 eyes had well-apposed junctions, ten eyes had malapposed junctions, and 12 had equally apposed junctions. The mean cylinder was -9.44 ± -4.00D in well-apposed group, -13.40 ± -5.01D in malapposed group, and -4.67 ± -0.94D in equally apposed group. Alignment pattern of the graft-host junction correlated significantly with the magnitude of astigmatism (P = 0.034). Preoperative corneal diseases did not have an effect on the magnitude of astigmatism (P = 0.123). The alignment pattern of the graft-host junction by AS-OCT can explain the postoperative astigmatism after PK where it correlates significantly with the magnitude of astigmatism.

Membrane junctions in Xenopus eggs: their distribution suggests a role in calcium regulation.

PubMed

Gardiner, D M; Grey, R D

1983-04-01

We have observed the presence of membrane junctions formed between the plasma membrane and cortical endoplasmic reticulum of mature, unactivated eggs of xenopus laevis. The parallel, paired membranes of the junction are separated by a 10-mn gap within which electron-dense material is present. This material occurs in patches with an average center-to-center distance of approximately 30 nm. These junctions are rare in immature (but fully grown) oocytes (approximately 2 percent of the plasma membrane is associated with junctions) and increase dramatically during progesterone-induced maturation. Junctions in the mature, unactivated egg are two to three times more abundant in the animal hemisphere (25-30 percent of the plasma membrane associated with junction) as compared with the vegetal hemisphere (10-15 percent). Junction density decreases rapidly to values characteristic of immature oocytes in response to egg activation. The plasma membrane-ER junctions of xenopus eggs are strikingly similar in structure to membrane junctions in muscle cells thought to be essential in the triggering of intracellular calcium release from the sarcoplasmic reticulum. In addition, the junctions' distinctive, animal-vegetal polarity of distribution, their dramatic appearance during maturation, and their disapperance during activation are correlated with previously documented patterns of calcium-mediated events in anuran eggs. We discuss several lines of evidence supporting the hypothesis that these junctions in xenopus eggs are sites that transduce extracellular events into intracellular calcium release during fertilization and activation of development.

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

PubMed

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2012-03-06

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2011-10-18

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Microstructural features of carious human enamel imaged with back-scattered electrons.

PubMed

Pearce, E I; Nelson, D G

1989-02-01

We have used back-scattered electrons (BE) in the scanning electron microscope to produce mineral density images of enamel. Flat surfaces of artificially-carious enamel, softened in an intra-oral experiment, and naturally-carious (white spot) enamel were polished to a high gloss with diamond lapping compound, rendering them almost featureless by secondary electron scanning electron microscopy. They were then examined at 10 to 30 kV in a Philips 505 instrument fitted with a 4-quadrant BE detector. Study of surfaces prepared approximately parallel to the natural surface showed that mineral was lost from both prism core and the interprismatic region, leaving a thin mineral-rich rim at the prism periphery. The same lesions viewed longitudinally on a surface prepared perpendicular to the natural surface showed mineral-rich bands at the prism margins in the outer enamel. Near the advancing front of the lesion, the prism junctions were widened and the prism cores sometimes hypermineralized. Natural lesions sectioned in the prism long axis showed features previously seen with other techniques, e.g., cross-striations and striae of Retzius, but in much greater detail. Mineral enrichment at the prism periphery in the lesion body and a widening of the prism junction at the advancing fronts of lesions in permanent teeth were most obvious. Calculations showed that with an accelerating voltage of 30 kV, the images reflected mineral density up to 4 microns beneath the surface. BE microscopy produces a high-resolution image of mineral loss or gain in carious enamel, with relatively easy sample preparation.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, J.M.; Kurtz, S.R.

1992-11-24

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

PubMed

Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

2018-02-08

Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

Imaging snake orbits at graphene n -p junctions

NASA Astrophysics Data System (ADS)

Kolasiński, K.; Mreńca-Kolasińska, A.; Szafran, B.

2017-01-01

We consider conductance mapping of the snake orbits confined along the n -p junction defined in graphene by the electrostatic doping in the quantum Hall regime. We explain the periodicity of conductance oscillations at the magnetic field and the Fermi energy scales by the properties of the n -p junction as a conducting channel. We evaluate the conductance maps for a floating gate scanning the surface of the device. In the quantum Hall conditions the currents flow near the edges of the sample and along the n -p junction. The conductance mapping resolves only the n -p junction and not the edges. The conductance oscillations along the junction are found in the maps with periodicity related to the cyclotron orbits of the scattering current. Stronger probe potentials provide support to localized resonances at one of the sides of the junction with current loops that interfere with the n -p junction currents. The interference results in a series of narrow lines parallel to the junction with positions that strongly depend on the magnetic field through the Aharonov-Bohm effect. The consequences of a limited transparency of finite-width n -p junctions are also discussed.

Geodynamical simulation of the RRF triple junction

NASA Astrophysics Data System (ADS)

Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

2017-12-01

Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

Disruption of gap junctions attenuates aminoglycoside-elicited renal tubular cell injury

PubMed Central

Yao, Jian; Huang, Tao; Fang, Xin; Chi, Yuan; Zhu, Ying; Wan, Yigang; Matsue, Hiroyuki; Kitamura, Masanori

2010-01-01

BACKGROUND AND PURPOSE Gap junctions play important roles in the regulation of cell phenotype and in determining cell survival after various insults. Here, we investigated the role of gap junctions in aminoglycoside-induced injury to renal tubular cells. EXPERIMENTAL APPROACH Two tubular epithelial cell lines NRK-E52 and LLC-PK1 were compared for gap junction protein expression and function by immunofluorescent staining, Western blot and dye transfer assay. Cell viability after exposure to aminoglycosides was evaluated by WST assay. Gap junctions were modulated by transfection of the gap junction protein, connexin 43 (Cx43), use of Cx43 siRNA and gap junction inhibitors. KEY RESULTS NRK-E52 cells expressed abundant Cx43 and were functionally coupled by gap junctional intercellular communication (GJIC). Exposure of NRK-E52 cells to aminoglycosides, G418 and hygromycin, increased Cx43 phosphorylation and GJIC. The aminoglycosides also decreased cell viability that was prevented by gap junction inhibitors and Cx43 siRNA. LLC-PK1 cells were gap junction-deficient and resistant to aminoglycoside-induced cytotoxicity. Over-expression of a wild-type Cx43 converted LLC-PK1 cells to a drug-sensitive phenotype. The gap junction inhibitor α-glycyrrhetinic acid (α-GA) activated Akt in NRK-E52 cells. Inhibition of the Akt pathway enhanced cell toxicity to G418 and abolished the protective effects of α-GA. In addition, gentamycin-elicited cytotoxicity in NRK-E52 cells was also significantly attenuated by α-GA. CONCLUSION AND IMPLICATIONS Gap junctions contributed to the cytotoxic effects of aminoglycosides. Modulation of gap junctions could be a promising approach for prevention and treatment of aminoglycoside-induced renal tubular cell injury. PMID:20649601

Expression pattern of adhesion molecules in junctional epithelium differs from that in other gingival epithelia.

PubMed

Hatakeyama, S; Yaegashi, T; Oikawa, Y; Fujiwara, H; Mikami, T; Takeda, Y; Satoh, M

2006-08-01

The gingival epithelium is the physiologically important interface between the bacterially colonized gingival sulcus and periodontal soft and mineralized connective tissues, requiring protection from exposure to bacteria and their products. However, of the three epithelia comprising the gingival epithelium, the junctional epithelium has much wider intercellular spaces than the sulcular epithelium and oral gingival epithelium. Hence, the aim of the present study was to characterize the cell adhesion structure in the junctional epithelium compared with the other two epithelia. Gingival epithelia excised at therapeutic flap surgery from patients with periodontitis were examined for expression of adhesion molecules by immunofluorescence. In the oral gingival epithelium and sulcular epithelium, but not in the junctional epithelium, desmoglein 1 and 2 in cell-cell contact sites were more abundant in the upper than the suprabasal layers. E-cadherin, the main transmembranous molecule of adherens junctions, was present in spinous layers of the oral gingival epithelium and sulcular epithelium, but was scarce in the junctional epithelium. In contrast, desmoglein 3 and P-cadherin were present in all layers of the junctional epithelium as well as the oral gingival epithelium and sulcular epithelium. Connexin 43 was clearly localized to spinous layers of the oral gingival epithelium, sulcular epithelium and parts of the junctional epithelium. Claudin-1 and occludin were expressed in the cell membranes of a few superficial layers of the oral gingival epithelium. These findings indicated that the junctional epithelium contains only a few desmosomes, composed of only desmoglein 3; adherens junctions are probably absent because of defective E-cadherin. Thus, the anchoring junctions connecting junctional epithelium cells are lax, causing widened intercellular spaces. In contrast, the oral gingival epithelium, which has a few tight junctions, functions as a barrier.

Endoplasmic reticulum-plasma membrane junctions: structure, function and dynamics.

PubMed

Okeke, Emmanuel; Dingsdale, Hayley; Parker, Tony; Voronina, Svetlana; Tepikin, Alexei V

2016-06-01

Endoplasmic reticulum (ER)-plasma membrane (PM) junctions are contact sites between the ER and the PM; the distance between the two organelles in the junctions is below 40 nm and the membranes are connected by protein tethers. A number of molecular tools and technical approaches have been recently developed to visualise, modify and characterise properties of ER-PM junctions. The junctions serve as the platforms for lipid exchange between the organelles and for cell signalling, notably Ca(2+) and cAMP signalling. Vice versa, signalling events regulate the development and properties of the junctions. Two Ca(2+) -dependent mechanisms of de novo formation of ER-PM junctions have been recently described and characterised. The junction-forming proteins and lipids are currently the focus of vigorous investigation. Junctions can be relatively short-lived and simple structures, forming and dissolving on the time scale of a few minutes. However, complex, sophisticated and multifunctional ER-PM junctions, capable of attracting numerous protein residents and other cellular organelles, have been described in some cell types. The road from simplicity to complexity, i.e. the transformation from simple 'nascent' ER-PM junctions to advanced stable multiorganellar complexes, is likely to become an attractive research avenue for current and future junctologists. Another area of considerable research interest is the downstream cellular processes that can be activated by specific local signalling events in the ER-PM junctions. Studies of the cell physiology and indeed pathophysiology of ER-PM junctions have already produced some surprising discoveries, likely to expand with advances in our understanding of these remarkable organellar contact sites. © 2016 The Authors. The Journal of Physiology © 2016 The Physiological Society.

Ferromagnetic Josephson Junctions for Cryogenic Memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Calcium/Ask1/MKK7/JNK2/c-Src signalling cascade mediates disruption of intestinal epithelial tight junctions by dextran sulfate sodium.

PubMed

Samak, Geetha; Chaudhry, Kamaljit K; Gangwar, Ruchika; Narayanan, Damodaran; Jaggar, Jonathan H; Rao, RadhaKrishna

2015-02-01

Disruption of intestinal epithelial tight junctions is an important event in the pathogenesis of ulcerative colitis. Dextran sodium sulfate (DSS) induces colitis in mice with symptoms similar to ulcerative colitis. However, the mechanism of DSS-induced colitis is unknown. We investigated the mechanism of DSS-induced disruption of intestinal epithelial tight junctions and barrier dysfunction in Caco-2 cell monolayers in vitro and mouse colon in vivo. DSS treatment resulted in disruption of tight junctions, adherens junctions and actin cytoskeleton leading to barrier dysfunction in Caco-2 cell monolayers. DSS induced a rapid activation of c-Jun N-terminal kinase (JNK), and the inhibition or knockdown of JNK2 attenuated DSS-induced tight junction disruption and barrier dysfunction. In mice, DSS administration for 4 days caused redistribution of tight junction and adherens junction proteins from the epithelial junctions, which was blocked by JNK inhibitor. In Caco-2 cell monolayers, DSS increased intracellular Ca(2+) concentration, and depletion of intracellular Ca(2+) by 1,2-bis-(o-aminophenoxy)ethane-N,N,N',N'-tetra-acetic acid tetrakis(acetoxymethyl ester) (BAPTA/AM) or thapsigargin attenuated DSS-induced JNK activation, tight junction disruption and barrier dysfunction. Knockdown of apoptosis signal-regulated kinase 1 (Ask1) or MKK7 blocked DSS-induced tight junction disruption and barrier dysfunction. DSS activated c-Src by a Ca2+ and JNK-dependent mechanism. Inhibition of Src kinase activity or knockdown of c-Src blocked DSS-induced tight junction disruption and barrier dysfunction. DSS increased tyrosine phosphorylation of occludin, zonula occludens-1 (ZO-1), E-cadherin and β-catenin. SP600125 abrogated DSS-induced tyrosine phosphorylation of junctional proteins. Recombinant JNK2 induced threonine phosphorylation and auto-phosphorylation of c-Src. The present study demonstrates that Ca(2+)/Ask1/MKK7/JNK2/cSrc signalling cascade mediates DSS-induced tight junction disruption and barrier dysfunction.

Fluorescence recovery after photobleaching reveals regulation and distribution of connexin36 gap junction coupling within mouse islets of Langerhans

PubMed Central

Farnsworth, Nikki L; Hemmati, Alireza; Pozzoli, Marina; Benninger, Richard K P

2014-01-01

The pancreatic islets are central to the maintenance of glucose homeostasis through insulin secretion. Glucose-stimulated insulin secretion is tightly linked to electrical activity in β cells within the islet. Gap junctions, composed of connexin36 (Cx36), form intercellular channels between β cells, synchronizing electrical activity and insulin secretion. Loss of gap junction coupling leads to altered insulin secretion dynamics and disrupted glucose homeostasis. Gap junction coupling is known to be disrupted in mouse models of pre-diabetes. Although approaches to measure gap junction coupling have been devised, they either lack cell specificity, suitable quantification of coupling or spatial resolution, or are invasive. The purpose of this study was to develop fluorescence recovery after photobleaching (FRAP) as a technique to accurately and robustly measure gap junction coupling in the islet. The cationic dye Rhodamine 123 was used with FRAP to quantify dye diffusion between islet β cells as a measure of Cx36 gap junction coupling. Measurements in islets with reduced Cx36 verified the accuracy of this technique in distinguishing between distinct levels of gap junction coupling. Analysis of individual cells revealed that the distribution of coupling across the islet is highly heterogeneous. Analysis of several modulators of gap junction coupling revealed glucose- and cAMP-dependent modulation of gap junction coupling in islets. Finally, FRAP was used to determine cell population specific coupling, where no functional gap junction coupling was observed between α cells and β cells in the islet. The results of this study show FRAP to be a robust technique which provides the cellular resolution to quantify the distribution and regulation of Cx36 gap junction coupling in specific cell populations within the islet. Future studies utilizing this technique may elucidate the role of gap junction coupling in the progression of diabetes and identify mechanisms of gap junction regulation for potential therapies. PMID:25172942

Fluorescence recovery after photobleaching reveals regulation and distribution of connexin36 gap junction coupling within mouse islets of Langerhans.

PubMed

Farnsworth, Nikki L; Hemmati, Alireza; Pozzoli, Marina; Benninger, Richard K P

2014-10-15

The pancreatic islets are central to the maintenance of glucose homeostasis through insulin secretion. Glucose‐stimulated insulin secretion is tightly linked to electrical activity in β cells within the islet. Gap junctions, composed of connexin36 (Cx36), form intercellular channels between β cells, synchronizing electrical activity and insulin secretion. Loss of gap junction coupling leads to altered insulin secretion dynamics and disrupted glucose homeostasis. Gap junction coupling is known to be disrupted in mouse models of pre‐diabetes. Although approaches to measure gap junction coupling have been devised, they either lack cell specificity, suitable quantification of coupling or spatial resolution, or are invasive. The purpose of this study was to develop fluorescence recovery after photobleaching (FRAP) as a technique to accurately and robustly measure gap junction coupling in the islet. The cationic dye Rhodamine 123 was used with FRAP to quantify dye diffusion between islet β cells as a measure of Cx36 gap junction coupling. Measurements in islets with reduced Cx36 verified the accuracy of this technique in distinguishing between distinct levels of gap junction coupling. Analysis of individual cells revealed that the distribution of coupling across the islet is highly heterogeneous. Analysis of several modulators of gap junction coupling revealed glucose‐ and cAMP‐dependent modulation of gap junction coupling in islets. Finally, FRAP was used to determine cell population specific coupling, where no functional gap junction coupling was observed between α cells and β cells in the islet. The results of this study show FRAP to be a robust technique which provides the cellular resolution to quantify the distribution and regulation of Cx36 gap junction coupling in specific cell populations within the islet. Future studies utilizing this technique may elucidate the role of gap junction coupling in the progression of diabetes and identify mechanisms of gap junction regulation for potential therapies.

Calcium Channels and Oxidative Stress Mediate a Synergistic Disruption of Tight Junctions by Ethanol and Acetaldehyde in Caco-2 Cell Monolayers.

PubMed

Samak, Geetha; Gangwar, Ruchika; Meena, Avtar S; Rao, Roshan G; Shukla, Pradeep K; Manda, Bhargavi; Narayanan, Damodaran; Jaggar, Jonathan H; Rao, RadhaKrishna

2016-12-13

Ethanol is metabolized into acetaldehyde in most tissues. In this study, we investigated the synergistic effect of ethanol and acetaldehyde on the tight junction integrity in Caco-2 cell monolayers. Expression of alcohol dehydrogenase sensitized Caco-2 cells to ethanol-induced tight junction disruption and barrier dysfunction, whereas aldehyde dehydrogenase attenuated acetaldehyde-induced tight junction disruption. Ethanol up to 150 mM did not affect tight junction integrity or barrier function, but it dose-dependently increased acetaldehyde-mediated tight junction disruption and barrier dysfunction. Src kinase and MLCK inhibitors blocked this synergistic effect of ethanol and acetaldehyde on tight junction. Ethanol and acetaldehyde caused a rapid and synergistic elevation of intracellular calcium. Calcium depletion by BAPTA or Ca 2+ -free medium blocked ethanol and acetaldehyde-induced barrier dysfunction and tight junction disruption. Diltiazem and selective knockdown of TRPV6 or Ca V 1.3 channels, by shRNA blocked ethanol and acetaldehyde-induced tight junction disruption and barrier dysfunction. Ethanol and acetaldehyde induced a rapid and synergistic increase in reactive oxygen species by a calcium-dependent mechanism. N-acetyl-L-cysteine and cyclosporine A, blocked ethanol and acetaldehyde-induced barrier dysfunction and tight junction disruption. These results demonstrate that ethanol and acetaldehyde synergistically disrupt tight junctions by a mechanism involving calcium, oxidative stress, Src kinase and MLCK.

Assembly of the Escherichia coli RuvABC resolvasome directs the orientation of Holliday junction resolution

PubMed Central

van Gool, Alain J.; Hajibagheri, Nasser M.A.; Stasiak, Andrzej; West, Stephen C.

1999-01-01

Genetic recombination can lead to the formation of intermediates in which DNA molecules are linked by Holliday junctions. Movement of a junction along DNA, by a process known as branch migration, leads to heteroduplex formation, whereas resolution of a junction completes the recombination process. Holliday junctions can be resolved in either of two ways, yielding products in which there has, or has not, been an exchange of flanking markers. The ratio of these products is thought to be determined by the frequency with which the two isomeric forms (conformers) of the Holliday junction are cleaved. Recent studies with enzymes that process Holliday junctions in Escherichia coli, the RuvABC proteins, however, indicate that protein binding causes the junction to adopt an open square-planar configuration. Within such a structure, DNA isomerization can have little role in determining the orientation of resolution. To determine the role that junction-specific protein assembly has in determining resolution bias, a defined in vitro system was developed in which we were able to direct the assembly of the RuvABC resolvasome. We found that the bias toward resolution in one orientation or the other was determined simply by the way in which the Ruv proteins were positioned on the junction. Additionally, we provide evidence that supports current models on RuvABC action in which Holliday junction resolution occurs as the resolvasome promotes branch migration. PMID:10421637

Models and methods for in vitro testing of hepatic gap junctional communication.

PubMed

Maes, Michaël; Yanguas, Sara Crespo; Willebrords, Joost; Vinken, Mathieu

2015-12-25

Inherent to their pivotal roles in controlling all aspects of the liver cell life cycle, hepatocellular gap junctions are frequently disrupted upon impairment of the homeostatic balance, as occurs during liver toxicity. Hepatic gap junctions, which are mainly built up by connexin32, are specifically targeted by tumor promoters and epigenetic carcinogens. This renders inhibition of gap junction functionality a suitable indicator for the in vitro detection of nongenotoxic hepatocarcinogenicity. The establishment of a reliable liver gap junction inhibition assay for routine in vitro testing purposes requires a cellular system in which gap junctions are expressed at an in vivo-like level as well as an appropriate technique to probe gap junction activity. Both these models and methods are discussed in the current paper, thereby focusing on connexin32-based gap junctions. Copyright © 2015 Elsevier B.V. All rights reserved.

Effect of inductive and capacitive coupling on the current–voltage characteristic and electromagnetic radiation from a system of Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahmonov, I. R., E-mail: rahmonov@theor.jinr.ru, E-mail: ilhom-tj@inbox.ru; Shukrinov, Yu. M.; Atanasova, P. Kh.

We have studied the current–voltage characteristic of a system of long Josephson junctions taking into account the inductive and capacitive coupling. The dependence of the average time derivative of the phase difference on the bias current and spatiotemporal dependences of the phase difference and magnetic field in each junction are considered. The possibility of branching of the current–voltage characteristic in the region of zero field step, which is associated with different numbers of fluxons in individual Josephson junctions, is demonstrated. The current–voltage characteristic of the system of Josephson junctions is compared with the case of a single junction, and itmore » is shown that the observed branching is due to coupling between the junctions. The intensity of electromagnetic radiation associated with motion of fluxons is calculated, and the effect of coupling between junctions on the radiation power is analyzed.« less

Varactor with integrated micro-discharge source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.; Manginell, Ronald P.; Moorman, Matthew W.

2016-10-18

An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of themore » np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO).« less

Extension of the ADC Charge-Collection Model to Include Multiple Junctions

NASA Technical Reports Server (NTRS)

Edmonds, Larry D.

2011-01-01

The ADC model is a charge-collection model derived for simple p-n junction silicon diodes having a single reverse-biased p-n junction at one end and an ideal substrate contact at the other end. The present paper extends the model to include multiple junctions, and the goal is to estimate how collected charge is shared by the different junctions.

Cell-specific expression of connexins and evidence of restricted gap junctional coupling between glial cells and between neurons.

PubMed

Rash, J E; Yasumura, T; Dudek, F E; Nagy, J I

2001-03-15

The transmembrane connexin proteins of gap junctions link extracellularly to form channels for cell-to-cell exchange of ions and small molecules. Two primary hypotheses of gap junction coupling in the CNS are the following: (1) generalized coupling occurs between neurons and glia, with some connexins expressed in both neurons and glia, and (2) intercellular junctional coupling is restricted to specific coupling partners, with different connexins expressed in each cell type. There is consensus that gap junctions link neurons to neurons and astrocytes to oligodendrocytes, ependymocytes, and other astrocytes. However, unresolved are the existence and degree to which gap junctions occur between oligodendrocytes, between oligodendrocytes and neurons, and between astrocytes and neurons. Using light microscopic immunocytochemistry and freeze-fracture replica immunogold labeling of adult rat CNS, we investigated whether four of the best-characterized CNS connexins are each present in one or more cell types, whether oligodendrocytes also share gap junctions with other oligodendrocytes or with neurons, and whether astrocytes share gap junctions with neurons. Connexin32 (Cx32) was found only in gap junctions of oligodendrocyte plasma membranes, Cx30 and Cx43 were found only in astrocyte membranes, and Cx36 was only in neurons. Oligodendrocytes shared intercellular gap junctions only with astrocytes, with each oligodendrocyte isolated from other oligodendrocytes except via astrocyte intermediaries. Finally, neurons shared gap junctions only with other neurons and not with glial cells. Thus, the different cell types of the CNS express different connexins, which define separate pathways for neuronal versus glial gap junctional communication.

Regulation of Gap Junction Dynamics by UNC-44/ankyrin and UNC-33/CRMP through VAB-8 in C. elegans Neurons

PubMed Central

Yan, Dong

2016-01-01

Gap junctions are present in both vertebrates and invertebrates from nematodes to mammals. Although the importance of gap junctions has been documented in many biological processes, the molecular mechanisms underlying gap junction dynamics remain unclear. Here, using the C. elegans PLM neurons as a model, we show that UNC-44/ankyrin acts upstream of UNC-33/CRMP in regulation of a potential kinesin VAB-8 to control gap junction dynamics, and loss-of-function in the UNC-44/UNC-33/VAB-8 pathway suppresses the turnover of gap junction channels. Therefore, we first show a signal pathway including ankyrin, CRMP, and kinesin in regulating gap junctions. PMID:27015090

Many-junction photovoltaic device performance under non-uniform high-concentration illumination

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

2017-09-01

A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; Tamboli, Adele C; Warren, Emily L

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

Controlling formation of single-molecule junctions by electrochemical reduction of diazonium terminal groups.

PubMed

Hines, Thomas; Díez-Pérez, Ismael; Nakamura, Hisao; Shimazaki, Tomomi; Asai, Yoshihiro; Tao, Nongjian

2013-03-06

We report controlling the formation of single-molecule junctions by means of electrochemically reducing two axialdiazonium terminal groups on a molecule, thereby producing direct Au-C covalent bonds in situ between the molecule and gold electrodes. We report a yield enhancement in molecular junction formation as the electrochemical potential of both junction electrodes approach the reduction potential of the diazonium terminal groups. Step length analysis shows that the molecular junction is significantly more stable, and can be pulled over a longer distance than a comparable junction created with amine anchoring bonds. The stability of the junction is explained by the calculated lower binding energy associated with the direct Au-C bond compared with the Au-N bond.

MLN0264 in Previously Treated Asian Participants With Advanced Gastrointestinal Carcinoma or Metastatic or Recurrent Gastric or Gastroesophageal Junction Adenocarcinoma Expressing Guanylyl Cyclase C

ClinicalTrials.gov

2017-02-08

Advanced Gastrointestinal Carcinoma; Gastroesophageal Junction Adenocarcinoma; Recurrent Gastric Adenocarcinoma; Recurrent Gastroesophageal Junction Adenocarcinoma; Metastatic Gastric Adenocarcinoma; Metastatic Gastroesophageal Junction Adenocarcinoma; Recurrent Gastrointestinal Carcinoma

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Tight junctions negatively regulate mechanical forces applied to adherens junctions in vertebrate epithelial tissue.

PubMed

Hatte, Guillaume; Prigent, Claude; Tassan, Jean-Pierre

2018-02-05

Epithelia are layers of polarised cells tightly bound to each other by adhesive contacts. Epithelia act as barriers between an organism and its external environment. Understanding how epithelia maintain their essential integrity while remaining sufficiently plastic to allow events such as cytokinesis to take place is a key biological problem. In vertebrates, the remodelling and reinforcement of adherens junctions maintains epithelial integrity during cytokinesis. The involvement of tight junctions in cell division, however, has remained unexplored. Here, we examine the role of tight junctions during cytokinesis in the epithelium of the Xenopus laevis embryo. Depletion of the tight junction-associated proteins ZO-1 and GEF-H1 leads to altered cytokinesis duration and contractile ring geometry. Using a tension biosensor, we show that cytokinesis defects originate from misregulation of tensile forces applied to adherens junctions. Our results reveal that tight junctions regulate mechanical tension applied to adherens junctions, which in turn impacts cytokinesis.This article has an associated First Person interview with the first author of the paper. © 2018. Published by The Company of Biologists Ltd.

Gap junction-mediated intercellular communication in the immune system.

PubMed

Neijssen, Joost; Pang, Baoxu; Neefjes, Jacques

2007-01-01

Immune cells are usually considered non-attached blood cells, which would exclude the formation of gap junctions. This is a misconception since many immune cells express connexin 43 (Cx43) and other connexins and are often residing in tissue. The role of gap junctions is largely ignored by immunologists as is the immune system in the field of gap junction research. Here, the current knowledge of the distribution of connexins and the function of gap junctions in the immune system is discussed. Gap junctions appear to play many roles in antibody productions and specific immune responses and may be important in sensing danger in tissue by the immune system. Gap junctions not only transfer electrical and metabolical but also immunological information in the form of peptides for a process called cross-presentation. This is essential for proper immune responses to viruses and possibly tumours. Until now only 40 research papers on gap junctions in the immune system appeared and this will almost certainly expand with the increased mutual interest between the fields of immunology and gap junction research.

76 FR 40293 - Proposed Amendment of Class D and Modification of Class E Airspace; Grand Junction, CO

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-08

... Junction, Walker Field. DATES: Comments must be received on or before August 22, 2011. ADDRESSES: Send... E airspace areas to update the airport name from Grand Junction, Walker Field, to Grand Junction...

76 FR 56966 - Amendment of Class D and Modification of Class E Airspace; Grand Junction, CO

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-15

... and Class E airspace to update the airport name from Grand Junction, Walker Field. DATES: Effective... airspace to update the airport name from Grand Junction, Walker Field, to Grand Junction Regional Airport...

Holographic s-wave and p-wave Josephson junction with backreaction

NASA Astrophysics Data System (ADS)

Wang, Yong-Qiang; Liu, Shuai

2016-11-01

In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

Tight junctions and the modulation of barrier function in disease

PubMed Central

2008-01-01

Tight junctions create a paracellular barrier in epithelial and endothelial cells protecting them from the external environment. Two different classes of integral membrane proteins constitute the tight junction strands in epithelial cells and endothelial cells, occludin and members of the claudin protein family. In addition, cytoplasmic scaffolding molecules associated with these junctions regulate diverse physiological processes like proliferation, cell polarity and regulated diffusion. In many diseases, disruption of this regulated barrier occurs. This review will briefly describe the molecular composition of the tight junctions and then present evidence of the link between tight junction dysfunction and disease. PMID:18415116

Multifluxon dynamics in driven Josephson junctions

NASA Astrophysics Data System (ADS)

Lawrence, Albert; Kim, Nung Soo; McDaniel, James; Jack, Michael

1985-06-01

The dynamics of fluxons in a long Josephson junction driven by time-varying nonuniform bias currents are described by a generalization of the sine-Gordon equation. This equation has solitary wave solutions which correspond to current vortices or quantized packets of magnetic flux in the junction. As with the sine-Gordon equation, multifluxon solutions may be demonstrated for the long Josephson junction. Our numerical calculations show that several fluxons may be launched or annihilated at the end of a junction. We also show multiple steady state conditions which correspond to one or more flux quanta trapped in the junction.

Garlic (Allium sativum) feeding impairs Sertoli cell junctional proteins in male Wistar rat testis: microscopy study.

PubMed

Hammami, I; Nahdi, A; Atig, F; El May, A; El May, M V

2016-12-01

Sertoli cell junctions, such as adhesion junction (AJ), gap junction (GJ) and tight junction (TJ), are important for maintaining spermatogenesis. In previous studies, we showed the inhibitory effect of crude garlic (Allium sativum, As) on spermatogenesis and steroidogenesis. The aim of this work was to complete our investigation on the impact of this plant, especially on Sertoli cell junctional proteins (SCJPs). During 1 month, 24 male rats were divided into groups: group control (0% of As) and treated groups fed 5%, 10% and 15% of As. Light and electron microscopy observations were performed to localise junctional proteins: connexin-43, Zona Occluding-1 and N-cadherin (immunohistochemistry) and to describe junctions. We showed that the specific cells involved in the localisation of the SCJP were similar in both control and treated groups, but with different immunoreactivity intensity between them. The electron microscopy observation focused on TJs between Sertoli cells, constituting the blood-testis barrier, showed ultrastructural changes such as fragmentation of TJs between adjacent Sertoli cell membranes and dilatation of rough endoplasmic reticulum saccules giving an aspect of scale to these junctions. We concluded that crude garlic consumption during 1 month induces perturbations on Sertoli cell junctions. These alterations can explain apoptosis in testicular germ cells previously showed. © 2016 Blackwell Verlag GmbH.

Neisseria gonorrhoeae breaches the apical junction of polarized epithelial cells for transmigration by activating EGFR

PubMed Central

Edwards, Vonetta L.; Wang, Liang-Chun; Dawson, Valerie; Stein, Daniel C.; Song, Wenxia

2017-01-01

Summary Neisseria gonorrhoeae initiates infection at the apical surface of columnar endocervical epithelial cells in the female reproductive tract. These cells provide a physical barrier against pathogens by forming continuous apical junctional complexes between neighbouring cells. This study examines the interaction of gonococci (GC) with polarized epithelial cells. We show that viable GC preferentially localize at the apical side of the cell–cell junction in polarized endometrial and colonic epithelial cells, HEC-1-B and T84. In GC-infected cells, continuous apical junctional complexes are disrupted, and the junction-associated protein β-catenin is redistributed from the apical junction to the cytoplasm and to GC adherent sites; however, overall cellular levels remain unchanged. This redistribution of junctional proteins is associated with a decrease in the ‘fence’ function of the apical junction but not its ‘gate’ function. Disruption of the apical junction by removing calcium increases GC transmigration across the epithelial monolayer. GC inoculation induces the phosphorylation of both epidermal growth factor receptor (EGFR) and β-catenin, while inhibition of EGFR kinase activity significantly reduces both GC-induced β-catenin redistribution and GC transmigration. Therefore, the gonococcus is capable of weakening the apical junction and polarity of epithelial cells by activating EGFR, which facilitates GC transmigration across the epithelium. PMID:23279089

Characterization of the column and autocellular junctions that define the vasculature of gill lamellae.

PubMed

Kato, Akira; Nakamura, Korefumi; Kudo, Hisayuki; Tran, Yen Ha; Yamamoto, Yoko; Doi, Hiroyuki; Hirose, Shigehisa

2007-09-01

Novel adhesion junctions have been characterized that are formed at the interface between pillar cells and collagen columns, both of which are essential constituents of the gill lamellae in fish. We termed these junctions the "column junction" and "autocellular junction" and determined their molecular compositions by immunofluorescence microscopy using pufferfish. We visualized collagen columns by concanavalin A staining and found that the components of integrin-mediated cell-matrix adhesion, such as talin, vinculin, paxillin, and fibronectin, were concentrated on plasma membranes surrounding collagen columns (column membranes). This connection is analogous to the focal adhesion of cultured mammalian cells, dense plaque of smooth muscle cells, and myotendinous junction of skeletal muscle cells. We named this connection the "column junction." In the cytoplasm near the column, actin fibers, actinin, and a phosphorylated myosin light chain of 20 kDa are densely located, suggesting the contractile nature of pillar cells. The membrane infoldings surrounding the collagen columns were found to be connected by the autocellular junction, whose components are highly tyrosine-phosphorylated and contain the tight junction protein ZO-1. This study represents the first molecular characterization and fluorescence visualization of the column and autocellular junctions involved in both maintaining structural integrity and the hemodynamics of the branchial lamellae.

Tight junctions and human diseases.

PubMed

Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

2003-09-01

Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

Synaptopodin couples epithelial contractility to α-actinin-4–dependent junction maturation

PubMed Central

Kannan, Nivetha

2015-01-01

The epithelial junction experiences mechanical force exerted by endogenous actomyosin activities and from interactions with neighboring cells. We hypothesize that tension generated at cell–cell adhesive contacts contributes to the maturation and assembly of the junctional complex. To test our hypothesis, we used a hydraulic apparatus that can apply mechanical force to intercellular junction in a confluent monolayer of cells. We found that mechanical force induces α-actinin-4 and actin accumulation at the cell junction in a time- and tension-dependent manner during junction development. Intercellular tension also induces α-actinin-4–dependent recruitment of vinculin to the cell junction. In addition, we have identified a tension-sensitive upstream regulator of α-actinin-4 as synaptopodin. Synaptopodin forms a complex containing α-actinin-4 and β-catenin and interacts with myosin II, indicating that it can physically link adhesion molecules to the cellular contractile apparatus. Synaptopodin depletion prevents junctional accumulation of α-actinin-4, vinculin, and actin. Knockdown of synaptopodin and α-actinin-4 decreases the strength of cell–cell adhesion, reduces the monolayer permeability barrier, and compromises cellular contractility. Our findings underscore the complexity of junction development and implicate a control process via tension-induced sequential incorporation of junctional components. PMID:26504173

Analyzing phorbol ester effects on gap junctional communication: a dramatic inhibition of assembly

PubMed Central

1994-01-01

The effect of 12-O-tetradeconylphorbol-13-acetate (TPA) on gap junction assembly between Novikoff hepatoma cells was examined. Cells were dissociated with EDTA to single cells and then reaggregated to form new junctions. When TPA (25 nM) was added to the cells at the onset of the 60-min reaggregation, dye transfer was detected at only 0.6% of the cell-cell interfaces compared to 72% for the untreated control and 74% for 4-alpha TPA, an inactive isomer of TPA. Freeze-fracture electron microscopy of reaggregated control cells showed interfaces containing an average of more than 600 aggregated intramembranous gap junction particles, while TPA-treated cells had no gap junctions. However, Lucifer yellow dye transfer between nondissociated cells via gap junctions was unaffected by 60 min of TPA treatment. Therefore, TPA dramatically inhibited gap junction assembly but did not alter channel gating nor enhance disassembly of preexisting gap junction structures. Short term TPA treatment (< 30 min) increased phosphorylation of the gap junction protein molecular weight of 43,000 (Cx43), but did not change the cellular level of Cx43. Cell surface biotinylation experiments suggested that TPA did not substantially reduce the plasma membrane concentration of Cx43. Therefore, the simple presence of Cx43 in the plasma membrane is not sufficient for gap junction assembly, and protein kinase C probably exerts an effect on assembly of gap junctions at the plasma membrane level. PMID:7806568

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

NASA Astrophysics Data System (ADS)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Shear zone junctions: Of zippers and freeways

NASA Astrophysics Data System (ADS)

Passchier, Cees W.; Platt, John P.

2017-02-01

Ductile shear zones are commonly treated as straight high-strain domains with uniform shear sense and characteristic curved foliation trails, bounded by non-deforming wall rock. Many shear zones, however, are branched, and if movement on such branches is contemporaneous, the resulting shape can be complicated and lead to unusual shear sense arrangement and foliation geometries in the wall rock. For Y-shaped shear zone triple junctions with three joining branches and transport direction at a high angle to the branchline, only eight basic types of junction are thought to be stable and to produce significant displacement. The simplest type, called freeway junctions, have similar shear sense in all three branches. The other types show joining or separating behaviour of shear zone branches similar to the action of a zipper. Such junctions may have shear zone branches that join to form a single branch (closing zipper junction), or a single shear zone that splits to form two branches, (opening zipper junction). All categories of shear zone junctions show characteristic foliation patterns and deflection of markers in the wall rock. Closing zipper junctions are unusual, since they form a non-active zone with opposite deflection of foliations in the wall rock known as an extraction fault or wake. Shear zipper junctions can form domains of overprinting shear sense along their flanks. A small and large field example are given from NE Spain and Eastern Anatolia. The geometry of more complex, 3D shear zone junctions with slip parallel and oblique to the branchline is briefly discussed.

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection.

PubMed

Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

2017-05-22

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10 -5 A cm -2 . The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection

NASA Astrophysics Data System (ADS)

Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

2017-07-01

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

Investigation of thermally evaporated high resistive B-doped amorphous selenium alloy films and metal contact studies

NASA Astrophysics Data System (ADS)

Oner, Cihan; Nguyen, Khai V.; Pak, Rahmi O.; Mannan, Mohammad A.; Mandal, Krishna C.

2015-08-01

Amorphous selenium (a-Se) alloy materials with arsenic, chlorine, boron, and lithium doping were synthesized for room temperature nuclear radiation detector applications using an optimized alloy composition for enhanced charge transport properties. A multi-step synthetic process has been implemented to first synthesize Se-As and Se-Cl master alloys from zone-refined Se (~ 7N), and then synthesized the final alloys for thermally evaporated large-area thin-film deposition on oxidized aluminum (Al/Al2O3) and indium tin oxide (ITO) coated glass substrates. Material purity, morphology, and compositional characteristics of the alloy materials and films were examined using glow discharge mass spectroscopy (GDMS), inductively coupled plasma mass spectroscopy (ICP-MS), differential scanning calorimetry (DSC), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive analysis by x-rays (EDAX). Current-Voltage (I-V) measurements were carried out to confirm very high resistivity of the alloy thin-films. We have further investigated the junction properties of the alloy films with a wide variety of metals with different work functions (Au, Ni, W, Pd, Cu, Mo, In, and Sn). The aim was to investigate whether the choice of metal can improve the performance of fabricated detectors by minimizing the dark leakage current. For various metal contacts, we have found significant dependencies of metal work functions on current transients by applying voltages from -800 V to +1000 V.

Spin-torque diode with tunable sensitivity and bandwidth by out-of-plane magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Zheng, C.; Pong, Philip W. T.

Spin-torque diodes based on nanosized magnetic tunnel junctions are novel microwave detectors with high sensitivity and wide frequency bandwidth. While previous reports mainly focus on improving the sensitivity, the approaches to extend the bandwidth are limited. This work experimentally demonstrates that through optimizing the orientation of the external magnetic field, wide bandwidth can be achieved while maintaining high sensitivity. The mechanism of the frequency- and sensitivity-tuning is investigated through analyzing the dependence of resonant frequency and DC voltage on the magnitude and the tilt angle of hard-plane magnetic field. The frequency dependence is qualitatively explicated by Kittel's ferromagnetic resonance model.more » The asymmetric resonant frequency at positive and negative magnetic field is verified by the numerical simulation considering the in-plane anisotropy. The DC voltage dependence is interpreted through evaluating the misalignment angle between the magnetization of the free layer and the reference layer. The tunability of the detector performance by the magnetic field angle is evaluated through characterizing the sensitivity and bandwidth under 3D magnetic field. The frequency bandwidth up to 9.8 GHz or maximum sensitivity up to 154 mV/mW (after impedance mismatch correction) can be achieved by tuning the angle of the applied magnetic field. The results show that the bandwidth and sensitivity can be controlled and adjusted through optimizing the orientation of the magnetic field for various applications and requirements.« less

Justification of Structural and Technological Solutions on Junction Perfecting on Permyakova and Shirotnaya Streets Intersection in Tyumen

NASA Astrophysics Data System (ADS)

Sannikov, S. P.; Timohovetz, V. D.; Kuzuek, A. Y.

2017-11-01

This article presents the justification of structurally-technological decisions on a junction perfecting on the intersection of Permyakova and Shirotnaya Streets in Tyumen. The authors made a comparative analysis of typical road junctions. Based on the comparison, the engineering decisions were made for an individual type of transport junctions. Several options of individual design were proposed and analyzed and three most suitable types for the road junctions were offered. On the basis of a multilateral studying and evaluation of the developed transport the article further proposed a transport junction with change-side traffic. The use of this type of intersection will increase the road junction capacity, reduce the number of accidents due to conflicting flows reduction which, in its turn, will increase the speed of cars.

Switching and Rectification in Carbon-Nanotube Junctions

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Andriotis, Antonis N.; Menon, Madhu; Chernozatonskii, Leonid

2003-01-01

Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.

Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

PubMed

Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

2012-07-01

Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewandowski, S.J.

1991-04-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-{ital T}{sub {ital c}} superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming amore » series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-{ital T}{sub {ital c}} materials are pointed out as a potential source of additional noise.« less

The prevalence of increased proximal junctional flexion following posterior instrumentation and arthrodesis for adolescent idiopathic scoliosis.

PubMed

Hollenbeck, S Matt; Glattes, R Christopher; Asher, Marc A; Lai, Sue Min; Burton, Douglas C

2008-07-01

Retrospective case series. To determine the prevalence of proximal junctional sagittal plane flexion increase after posterior instrumentation and arthrodesis. Increased flexion proximal to the junction of the instrumented and fused spinal region with the adjacent mobile spine seems to be a relatively recent observation, may be increasing, and is occasionally problematic. The proximal junctional sagittal angulation 2 motion segments above the upper end instrumentation levels was measured on lateral standing preoperative and follow-up radiographs. One hundred seventy-four of 208 consecutive patients (84%) at an average radiograph follow-up of 4.9 +/- 2.73 years had increased proximal junctional flexion in 9.2%. The preoperative junctional measurements were normal for both normal and increased flexion groups. At follow-up, proximal junctional flexion had increased significantly more in the increased flexion group (2.1 degrees vs. 14.1 degrees , P < 0.0001). None of the possible risk factors studied, including demographic comparisons, Lenke classification (including lumbar and sagittal modifiers), end-instrumented vertebrae, end vertebra anchor configurations, surgical sequence, additional anterior surgery, rib osteotomies, and instrumentation length, were significantly associated with increased proximal junctional flexion at follow-up. Lenke 6 curves were at marginal risk of increased proximal junctional flexion (P = 0.0108). There were no differences between the groups in total Scoliosis Research Society-22r scores at an average follow-up of 8.0 +/- 3.74 years. No patient had additional surgery related to increased proximal junctional flexion. The prevalence of increased proximal junctional flexion was 9.2%. No significant risk factors were identified. Total Scoliosis Research Society-22r scores were similar for groups with normal and increased proximal junctional flexion at follow-up.

High voltage series connected tandem junction solar battery

DOEpatents

Hanak, Joseph J.

1982-01-01

A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

CHLORAL HYDRATE DECREASES GAP JUNCTION COMMUNICATION IN RAT LIVER EPITHELIAL CELLS

EPA Science Inventory

Chloral hydrate decreases gap junction communication in rat liver epithelial cells

Gap junction communication (GJC) is involved in controlling cell proliferation and differentiation. Connexins (Cx) that make up these junctions are composed of a closely related group of m...

Monocytic cell junction proteins serve important roles in atherosclerosis via the endoglin pathway

PubMed Central

Chen, Lina; Chen, Zhongliang; Ge, Menghua; Tang, Oushan; Cheng, Yinhong; Zhou, Haoliang; Shen, Yu; Qin, Fengming

2017-01-01

The formation of atherosclerosis is recognized to be caused by multiple factors including pathogenesis in monocytes during inflammation. The current study provided evidence that monocytic junctions were significantly altered in patients with atherosclerosis, which suggested an association between cell junctions and atherosclerosis. Claudin-1, occludin-1 and ZO-1 were significantly enhanced in atherosclerosis, indicating that the tight junction pathway was activated during the pathogenesis of atherosclerosis. In addition, the gene expression of 5 connexin members involved in the gap junction pathway were quantified, indicating that connexin 43 and 46 were significantly up-regulated in atherosclerosis. Furthermore, inflammatory factors including endoglin and SMAD were observed, suggesting that immune regulative factors were down-regulated in this pathway. Silicon-based analysis additionally identified that connexins and tight junctions were altered in association with monocytic inflammation regulations, endoglin pathway. The results imply that reduced expression of the immune regulation pathway in monocytes is correlated with the generation of gap junctions and tight junctions which serve important roles in atherosclerosis. PMID:28901429

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

PubMed Central

Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

2015-01-01

The multi-junction concept is the most relevant approach to overcome the Shockley–Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies. PMID:26177808

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

PubMed

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

Direct analysis of Holliday junction resolving enzyme in a DNA origami nanostructure.

PubMed

Suzuki, Yuki; Endo, Masayuki; Cañas, Cristina; Ayora, Silvia; Alonso, Juan C; Sugiyama, Hiroshi; Takeyasu, Kunio

2014-06-01

Holliday junction (HJ) resolution is a fundamental step for completion of homologous recombination. HJ resolving enzymes (resolvases) distort the junction structure upon binding and prior cleavage, raising the possibility that the reactivity of the enzyme can be affected by a particular geometry and topology at the junction. Here, we employed a DNA origami nano-scaffold in which each arm of a HJ was tethered through the base-pair hybridization, allowing us to make the junction core either flexible or inflexible by adjusting the length of the DNA arms. Both flexible and inflexible junctions bound to Bacillus subtilis RecU HJ resolvase, while only the flexible junction was efficiently resolved into two duplexes by this enzyme. This result indicates the importance of the structural malleability of the junction core for the reaction to proceed. Moreover, cleavage preferences of RecU-mediated reaction were addressed by analyzing morphology of the reaction products. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Advance of Mechanically Controllable Break Junction for Molecular Electronics.

PubMed

Wang, Lu; Wang, Ling; Zhang, Lei; Xiang, Dong

2017-06-01

Molecular electronics stands for the ultimate size of functional elements, keeping up with an unstoppable trend over the past few decades. As a vital component of molecular electronics, single molecular junctions have attracted significant attention from research groups all over the world. Due to its pronounced superiority, the mechanically controllable break junctions (MCBJ) technique has been widely applied to characterize the dynamic performance of single molecular junctions. This review presents a system analysis for single-molecule junctions and offers an overview of four test-beds for single-molecule junctions, thus offering more insight into the mechanisms of electron transport. We mainly focus on the development of state-of-the-art mechanically controlled break junctions. The three-terminal gated MCBJ approaches are introduced to manipulate the electron transport of molecules, and MCBJs are combined with characterization techniques. Additionally, applications of MCBJs and remarkable properties of single molecules are addressed. Finally, the challenges and perspective for the mechanically controllable break junctions technique are provided.

Myosin-dependent remodeling of adherens junctions protects junctions from Snail-dependent disassembly

PubMed Central

Weng, Mo

2016-01-01

Although Snail is essential for disassembly of adherens junctions during epithelial–mesenchymal transitions (EMTs), loss of adherens junctions in Drosophila melanogaster gastrula is delayed until mesoderm is internalized, despite the early expression of Snail in that primordium. By combining live imaging and quantitative image analysis, we track the behavior of E-cadherin–rich junction clusters, demonstrating that in the early stages of gastrulation most subapical clusters in mesoderm not only persist, but move apically and enhance in density and total intensity. All three phenomena depend on myosin II and are temporally correlated with the pulses of actomyosin accumulation that drive initial cell shape changes during gastrulation. When contractile myosin is absent, the normal Snail expression in mesoderm, or ectopic Snail expression in ectoderm, is sufficient to drive early disassembly of junctions. In both cases, junctional disassembly can be blocked by simultaneous induction of myosin contractility. Our findings provide in vivo evidence for mechanosensitivity of cell–cell junctions and imply that myosin-mediated tension can prevent Snail-driven EMT. PMID:26754645

ER-plasma membrane junctions: Why and how do we study them?

PubMed

Chang, Chi-Lun; Chen, Yu-Ju; Liou, Jen

2017-09-01

Endoplasmic reticulum (ER)-plasma membrane (PM) junctions are membrane microdomains important for communication between the ER and the PM. ER-PM junctions were first reported in muscle cells in 1957, but mostly ignored in non-excitable cells due to their scarcity and lack of functional significance. In 2005, the discovery of stromal interaction molecule 1 (STIM1) mediating a universal Ca 2+ feedback mechanism at ER-PM junctions in mammalian cells led to a resurgence of research interests toward ER-PM junctions. In the past decade, several major advancements have been made in this emerging topic in cell biology, including the generation of tools for labeling ER-PM junctions and the unraveling of mechanisms underlying regulation and functions of ER-PM junctions. This review summarizes early studies, recently developed tools, and current advances in the characterization and understanding of ER-PM junctions. This article is part of a Special Issue entitled: Membrane Contact Sites edited by Christian Ungermann and Benoit Kornmann. Copyright © 2017 Elsevier B.V. All rights reserved.

Electronic and mechanical characteristics of stacked dimer molecular junctions.

PubMed

Magyarkuti, András; Adak, Olgun; Halbritter, Andras; Venkataraman, Latha

2018-02-15

Break-junction measurements are typically aimed at characterizing electronic properties of single molecules bound between two metal electrodes. Although these measurements have provided structure-function relationships for such devices, there is little work that studies the impact of molecule-molecule interactions on junction characteristics. Here, we use a scanning tunneling microscope based break-junction technique to study pi-stacked dimer junctions formed with two amine-terminated conjugated molecules. We show that the conductance, force and flicker noise of such dimers differ dramatically when compared with the corresponding monomer junctions and discuss the implications of these results on intra- and inter-molecular charge transport.

Experiments and 3D simulations of flow structures in junctions and their influence on location of flowmeters.

PubMed

Mignot, E; Bonakdari, H; Knothe, P; Lipeme Kouyi, G; Bessette, A; Rivière, N; Bertrand-Krajewski, J-L

2012-01-01

Open-channel junctions are common occurrences in sewer networks and flow rate measurement often occurs near these singularities. Local flow structures are 3D, impact on the representativeness of the local flow measurements and thus lead to deviations in the flow rate estimation. The present study aims (i) to measure and simulate the flow pattern in a junction flow, (ii) to analyse the impact of the junction on the velocity distribution according to the distance from the junction and thus (iii) to evaluate the typical error derived from the computation of the flow rate close to the junction.

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Junction detection and pathway selection

NASA Astrophysics Data System (ADS)

Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

1992-02-01

The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

NASA Astrophysics Data System (ADS)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

2017-09-01

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE PAGES

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius; ...

2017-08-14

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the recordmore » III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.« less

Precision measurement with an optical Josephson junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ng, H. T.; Burnett, K.; Dunningham, J. A.

2007-06-15

We present a theoretical study of a type of Josephson device, the so-called 'optical Josephson junction' [Y. Shin et al. Phys. Rev. Lett. 95, 170402 (2005).]. In this device, two condensates are optically coupled through a waveguide by a pair of Bragg beams. This optical Josephson junction differs from the usual Josephson junction where condensates are weakly coupled by tunneling through a barrier. We discuss the use of this optical Josephson junction, for making precision measurements.

Superconducting Quantum Interference Devices for the Detection of Magnetic Flux and Application to Airborne High Frequency Direction Finding

DTIC Science & Technology

2015-03-26

junction [29]. • The Resistively-Shunted- Junction (RSJ) Model • The Tunnel - Junction -Microscopic (TJM) Model • The Nonlinear...Resistive (RSJN) Model These circuit representations describe the junction using a parallel configuration of a resistor, noise current source, and a...solution for the Josephson junction IVP model equation for the noise -free case, in = 0. The thermal noise current is set to zero to exclude noise

Functional assessment of gap junctions in monolayer and three-dimensional cultures of human tendon cells using fluorescence recovery after photobleaching

PubMed Central

Kuzma-Kuzniarska, Maria; Yapp, Clarence; Pearson-Jones, Thomas W.; Jones, Andrew K.; Hulley, Philippa A.

2014-01-01

Abstract. Gap junction-mediated intercellular communication influences a variety of cellular activities. In tendons, gap junctions modulate collagen production, are involved in strain-induced cell death, and are involved in the response to mechanical stimulation. The aim of the present study was to investigate gap junction-mediated intercellular communication in healthy human tendon-derived cells using fluorescence recovery after photobleaching (FRAP). The FRAP is a noninvasive technique that allows quantitative measurement of gap junction function in living cells. It is based on diffusion-dependent redistribution of a gap junction-permeable fluorescent dye. Using FRAP, we showed that human tenocytes form functional gap junctions in monolayer and three-dimensional (3-D) collagen I culture. Fluorescently labeled tenocytes following photobleaching rapidly reacquired the fluorescent dye from neighboring cells, while HeLa cells, which do not communicate by gap junctions, remained bleached. Furthermore, both 18 β-glycyrrhetinic acid and carbenoxolone, standard inhibitors of gap junction activity, impaired fluorescence recovery in tendon cells. In both monolayer and 3-D cultures, intercellular communication in isolated cells was significantly decreased when compared with cells forming many cell-to-cell contacts. In this study, we used FRAP as a tool to quantify and experimentally manipulate the function of gap junctions in human tenocytes in both two-dimensional (2-D) and 3-D cultures. PMID:24390370

Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION registered Followed by Laser Thermal Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Sempere, Guillaume

In order to achieve the requirements for P+/N junctions for <45 nm ITRS nodes, ultra low energy and high dose implantations are needed. Classical beamline implantation is now limited in low energies, compared to Plasma Immersion Ion Implantation (PIII) which efficiency is no more to prove for the realization of Ultra-Shallow Junctions (USJ) in semiconductor applications : this technique allows to get ultimate shallow profiles (as implanted) due to no lower limitation of energy and high dose rate. Electrical activation is also a big issue since it has to afford high electrical activation rate with very low diffusion. Laser annealingmore » is one of the candidates for the 45 nm node. This paper presents electrical and physico-chemical characterizations of junctions realized with BF3 PIII followed by laser thermal processing with aim to obtain ultra-shallow junctions. Different implantation conditions (acceleration voltage/dose) and laser conditions (laser types, fluence/number of shots) are used for this study. Pre-amorphization is also used to confine the junction depth, and is shown to have a positive effect on junction depth but leads in higher junction leakage due to the remaining of EOR defects. The characterization is done using Optical characterization tool (SEMILAB) for sheet resistance and junction leakage measurements. SIMS is used for Boron profile and junction depth.« less

Transparent contacts for stacked compound photovoltaic cells

DOEpatents

Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

2016-11-29

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

Fabrication and characterization of graphene/molecule/graphene vertical junctions with aryl alkane monolayers

NASA Astrophysics Data System (ADS)

Jeong, Inho; Song, Hyunwook

2017-11-01

In this study, we fabricated and characterized graphene/molecule/graphene (GMG) vertical junctions with aryl alkane monolayers. The constituent molecules were chemically self-assembled via electrophilic diazonium reactions into a monolayer on the graphene bottom electrode, while the other end physically contacted the graphene top electrode. A full understanding of the transport properties of molecular junctions is a key step in the realization of molecular-scale electronic devices and requires detailed microscopic characterization of the junction's active region. Using a multiprobe approach combining a variety of transport techniques, we elucidated the transport mechanisms and electronic structure of the GMG junctions, including temperature- and length-variable transport measurements, and transition voltage spectroscopy. These results provide criteria to establish a valid molecular junction and to determine the most probable transport characteristics of the GMG junctions.

Breaking into the epithelial apical–junctional complex — news from pathogen hackers

PubMed Central

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2012-01-01

The epithelial apical–junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical–junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical–junctional complex of the Ig superfamily — junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor — are important regulators of junction structure and function and represent critical targets of microbial virulence gene products. PMID:15037310

Breaking into the epithelial apical-junctional complex--news from pathogen hackers.

PubMed

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2004-02-01

The epithelial apical-junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical-junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical-junctional complex of the Ig superfamily--junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor--are important regulators of junction structure and function and represent critical targets of microbial virulence gene products.

Evolutionary dynamics and sites of illegitimate recombination revealed in the interspersion and sequence junctions of two nonhomologous satellite DNAs in cactophilic Drosophila species.

PubMed

Kuhn, G C S; Teo, C H; Schwarzacher, T; Heslop-Harrison, J S

2009-05-01

Satellite DNA (satDNA) is a major component of genomes but relatively little is known about the fine-scale organization of unrelated satDNAs residing at the same chromosome location, and the sequence structure and dynamics of satDNA junctions. We studied the organization and sequence junctions of two nonhomologous satDNAs, pBuM and DBC-150, in three species from the neotropical Drosophila buzzatii cluster (repleta group). In situ hybridization to microchromosomes, interphase nuclei and extended DNA fibers showed frequent interspersion of the two satellites in D. gouveai, D. antonietae and, to a lesser extent, D. seriema. We isolated by PCR six pBuM x DBC-150 junctions: four are exclusive to D. gouveai and two are exclusive to D. antonietae. The six junction breakpoints occur at different positions within monomers, suggesting independent origin. Four junctions showed abrupt transitions between the two satellites, whereas two junctions showed a distinct 10 bp tandem duplication before the junction. Unlike pBuM, DBC-150 junction repeats are more variable than randomly cloned monomers and showed diagnostic features in common to a 3-monomer higher-order repeat seen in the sister species D. serido. The high levels of interspersion between pBuM and DBC-150 repeats suggest extensive rearrangements between the two satellites, maybe favored by specific features of the microchromosomes. Our interpretation is that the junctions evolved by multiples events of illegitimate recombination between nonhomologous satDNA repeats, with subsequent rounds of unequal crossing-over expanding the copy number of some of the junctions.

Interferon-gamma inhibits intestinal restitution by preventing gap junction communication between enterocytes.

PubMed

Leaphart, Cynthia L; Qureshi, Faisal; Cetin, Selma; Li, Jun; Dubowski, Theresa; Baty, Catherine; Batey, Catherine; Beer-Stolz, Donna; Guo, Fengli; Murray, Sandra A; Hackam, David J

2007-06-01

Necrotizing enterocolitis (NEC) is characterized by interferon-gamma (IFN-gamma) release and inadequate intestinal restitution. Because enterocytes migrate together, mucosal healing may require interenterocyte communication via connexin 43-mediated gap junctions. We hypothesize that enterocyte migration requires interenterocyte communication, that IFN impairs migration by impairing connexin 43, and that impaired healing during NEC is associated with reduced gap junctions. NEC was induced in Swiss-Webster or IFN(-/-) mice, and restitution was determined in the presence of the gap junction inhibitor oleamide, or via time-lapse microscopy of IEC-6 cells. Connexin 43 expression, trafficking, and localization were detected in cultured or primary enterocytes or mouse or human intestine by confocal microscopy and (35)S-labeling, and gap junction communication was assessed using live microscopy with oleamide or connexin 43 siRNA. Enterocytes expressed connexin 43 in vitro and in vivo, and exchanged fluorescent dye via gap junctions. Gap junction inhibition significantly reduced enterocyte migration in vitro and in vivo. NEC was associated with IFN release and loss of enterocyte connexin 43 expression. IFN inhibited enterocyte migration by reducing gap junction communication through the dephosphorylation and internalization of connexin 43. Gap junction inhibition significantly increased NEC severity, whereas reversal of the inhibitory effects of IFN on gap junction communication restored enterocyte migration after IFN exposure. Strikingly, IFN(-/-) mice were protected from the development of NEC, and showed restored connexin 43 expression and intestinal restitution. IFN inhibits enterocyte migration by preventing interenterocyte gap junction communication. Connexin 43 loss may provide insights into the development of NEC, in which restitution is impaired.

Regulation of tight junction assembly and epithelial morphogenesis by the heat shock protein Apg-2

PubMed Central

Aijaz, Saima; Sanchez-Heras, Elena; Balda, Maria S; Matter, Karl

2007-01-01

Background Tight junctions are required for epithelial barrier formation and participate in the regulation of signalling mechanisms that control proliferation and differentiation. ZO-1 is a tight junction-associated adaptor protein that regulates gene expression, junction assembly and epithelial morphogenesis. We have previously demonstrated that the heat shock protein Apg-2 binds ZO-1 and thereby regulates its role in cell proliferation. Here, we addressed the question whether Apg-2 is also important for junction formation and epithelial morphogenesis. Results We demonstrate that depletion of Apg-2 by RNAi in MDCK cells did not prevent formation of functional tight junctions. Similar to ZO-1, however, reduced expression of Apg-2 retarded de novo junction assembly if analysed in a Ca-switch model. Formation of functional junctions, as monitored by measuring transepithelial electrical resistance, and recruitment of tight and adherens junction markers were retarded. If cultured in three dimensional extracellular matrix gels, Apg-2 depleted cells, as previously shown for ZO-1 depleted cells, did not form hollow polarised cysts but poorly organised, irregular structures. Conclusion Our data indicate that Apg-2 regulates junction assembly and is required for normal epithelial morphogenesis in a three-dimensional culture system, suggesting that Apg-2 is an important regulator of epithelial differentiation. As the observed phenotypes are similar to those previously described for ZO-1 depleted cells and depletion of Apg-2 retards junctional recruitment of ZO-1, regulation of ZO-1 is likely to be an important functional role for Apg-2 during epithelial differentiation. PMID:18028534

Regulation of tight junction assembly and epithelial morphogenesis by the heat shock protein Apg-2.

PubMed

Aijaz, Saima; Sanchez-Heras, Elena; Balda, Maria S; Matter, Karl

2007-11-20

Tight junctions are required for epithelial barrier formation and participate in the regulation of signalling mechanisms that control proliferation and differentiation. ZO-1 is a tight junction-associated adaptor protein that regulates gene expression, junction assembly and epithelial morphogenesis. We have previously demonstrated that the heat shock protein Apg-2 binds ZO-1 and thereby regulates its role in cell proliferation. Here, we addressed the question whether Apg-2 is also important for junction formation and epithelial morphogenesis. We demonstrate that depletion of Apg-2 by RNAi in MDCK cells did not prevent formation of functional tight junctions. Similar to ZO-1, however, reduced expression of Apg-2 retarded de novo junction assembly if analysed in a Ca-switch model. Formation of functional junctions, as monitored by measuring transepithelial electrical resistance, and recruitment of tight and adherens junction markers were retarded. If cultured in three dimensional extracellular matrix gels, Apg-2 depleted cells, as previously shown for ZO-1 depleted cells, did not form hollow polarised cysts but poorly organised, irregular structures. Our data indicate that Apg-2 regulates junction assembly and is required for normal epithelial morphogenesis in a three-dimensional culture system, suggesting that Apg-2 is an important regulator of epithelial differentiation. As the observed phenotypes are similar to those previously described for ZO-1 depleted cells and depletion of Apg-2 retards junctional recruitment of ZO-1, regulation of ZO-1 is likely to be an important functional role for Apg-2 during epithelial differentiation.

30 CFR 75.602 - Trailing cable junctions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Trailing cable junctions. 75.602 Section 75.602... MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Trailing Cables § 75.602 Trailing cable junctions. [Statutory Provision] When two or more trailing cables junction to the same distribution center, means shall...

Public Health Nursing: Public Health Centers

Science.gov Websites

Locations Anchorage-based Itinerants Bethel Craig Delta Junction Dillingham Fairbanks Homer Juneau Kenai agencies with state grant assistance Frontier Region Delta Junction Dillingham Fairbanks Kodiak Nome Tok [back to top] Delta Junction Public Health Center 2857 Alaska Hwy, Room 210 Delta Junction, Alaska 99737

Amorphous semiconductor solar cell

DOEpatents

Dalal, Vikram L.

1981-01-01

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Model Building to Facilitate Understanding of Holliday Junction and Heteroduplex Formation, and Holliday Junction Resolution

ERIC Educational Resources Information Center

Selvarajah, Geeta; Selvarajah, Susila

2016-01-01

Students frequently expressed difficulty in understanding the molecular mechanisms involved in chromosomal recombination. Therefore, we explored alternative methods for presenting the two concepts of the double-strand break model: Holliday junction and heteroduplex formation, and Holliday junction resolution. In addition to a lecture and…

An induced junction photovoltaic cell

NASA Technical Reports Server (NTRS)

Call, R. L.

1974-01-01

Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

NASA Technical Reports Server (NTRS)

Chi, J.-Y.; Gatos, H. C.

1977-01-01

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

Zero energy states at a normal-metal/cuprate-superconductor interface probed by shot noise

NASA Astrophysics Data System (ADS)

Negri, O.; Zaberchik, M.; Drachuck, G.; Keren, A.; Reznikov, M.

2018-06-01

We report measurements of the current noise generated in the optimally doped, x =0.15 , Au-La2-xSrxCuO4 junctions. For high transmission junctions on a (110) surface, we observed a split zero-bias conductance peak (ZBCP), accompanied by enhanced shot noise. We observed no enhanced noise neither in low-transmission junctions on a (110) surface nor in any junction on a (100) surface. We attribute the enhanced noise to Cooper pair transport through the junctions.

Structure of junctions of multiwalled carbon nanotubes with tetragonal cross section and flattened nanotubes revealed by electron-beam tomography

NASA Astrophysics Data System (ADS)

Nagano, Yuta; Kohno, Hideo

2017-11-01

Multiwalled carbon nanotubes with tetragonal cross section frequently form junctions with flattened multi-walled carbon nanotubes, a kind of carbon nanoribbon. The three-dimensional structure of the junctions is revealed by transmission-electron-microscopy-based tomography. Two types of junction, parallel and diagonal, are found. The formation mechanism of these two types of junction is discussed in terms of the origami mechanism that was previously proposed to explain the formation of carbon nanoribbons and nanotetrahedra.

Transmembrane proteins of tight junctions.

PubMed

Chiba, Hideki; Osanai, Makoto; Murata, Masaki; Kojima, Takashi; Sawada, Norimasa

2008-03-01

Tight junctions contribute to the paracellular barrier, the fence dividing plasma membranes, and signal transduction, acting as a multifunctional complex in vertebrate epithelial and endothelial cells. The identification and characterization of the transmembrane proteins of tight junctions, claudins, junctional adhesion molecules (JAMs), occludin and tricellulin, have led to insights into the molecular nature of tight junctions. We provide an overview of recent progress in studies on these proteins and highlight their roles and regulation, as well as their functional significance in human diseases.

Overdamped Nb/Al-AlO{sub x}/Nb Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacquaniti, V.; Cagliero, C.; Maggi, S.

2005-01-24

We report the fabrication and characterization of overdamped Nb/Al-AlO{sub x}/Nb superconductor-insulator-superconductor Josephson junction whose fabrication process derives from that of the well-known hysteretic junctions. These junctions are an intermediate state between the superconductor-normal metal-superconductor and the superconductor-insulator-superconductor Josephson junctions. Stable and reproducible nonhysteretic current-voltage characteristics are obtained with a proper choice of the fabrication parameters. We have measured critical current densities J{sub C} from 10{sup 3} up to 2x10{sup 4} A/cm{sup 2}, with characteristic voltages from 80 to nearly 450 {mu}V. The junctions are stable against time and repeated thermal cycling.

Cleavage of transmembrane junction proteins and their role in regulating epithelial homeostasis

PubMed Central

Nava, Porfirio; Kamekura, Ryuta; Nusrat, Asma

2013-01-01

Epithelial tissues form a selective barrier that separates the external environment from the internal tissue milieu. Single epithelial cells are densely packed and associate via distinct intercellular junctions. Intercellular junction proteins not only control barrier properties of the epithelium but also play an important role in regulating epithelial homeostasis that encompasses cell proliferation, migration, differentiation and regulated shedding. Recent studies have revealed that several proteases target epithelial junction proteins during physiological maturation as well as in pathologic states such as inflammation and cancer. This review discusses mechanisms and biological consequences of transmembrane junction protein cleavage. The influence of junction protein cleavage products on pathogenesis of inflammation and cancer is discussed. PMID:24665393

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

PubMed

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

NASA Technical Reports Server (NTRS)

Mcgrath, W. R.; Leduc, H. G.; Stern, J. A.

1990-01-01

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Fabrication of Josephson Junction without shadow evaporation

NASA Astrophysics Data System (ADS)

Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

Overlap junctions for high coherence superconducting qubits

NASA Astrophysics Data System (ADS)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

Josephson parametric phase-locked oscillator and its application to dispersive readout of superconducting qubits

NASA Astrophysics Data System (ADS)

Lin, Z. R.; Inomata, K.; Koshino, K.; Oliver, W. D.; Nakamura, Y.; Tsai, J. S.; Yamamoto, T.

2014-07-01

The parametric phase-locked oscillator (PPLO) is a class of frequency-conversion device, originally based on a nonlinear element such as a ferrite ring, that served as a fundamental logic element for digital computers more than 50 years ago. Although it has long since been overtaken by the transistor, there have been numerous efforts more recently to realize PPLOs in different physical systems such as optical photons, trapped atoms, and electromechanical resonators. This renewed interest is based not only on the fundamental physics of nonlinear systems, but also on the realization of new, high-performance computing devices with unprecedented capabilities. Here we realize a PPLO with Josephson-junction circuitry and operate it as a sensitive phase detector. Using a PPLO, we demonstrate the demodulation of a weak binary phase-shift keying microwave signal of the order of a femtowatt. We apply PPLO to dispersive readout of a superconducting qubit, and achieved high-fidelity, single-shot and non-destructive readout with Rabi-oscillation contrast exceeding 90%.

Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Rosa, Alessandro; /CERN; Boscardin, M.

2012-04-04

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3)more » at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.« less

Complete information acquisition in scanning probe microscopy

DOE PAGES

Belianinov, Alex; Kalinin, Sergei V.; Jesse, Stephen

2015-03-13

In the last three decades, scanning probe microscopy (SPM) has emerged as a primary tool for exploring and controlling the nanoworld. A critical part of the SPM measurements is the information transfer from the tip-surface junction to a macroscopic measurement system. This process reduces the many degrees of freedom of a vibrating cantilever to relatively few parameters recorded as images. Similarly, the details of dynamic cantilever response at sub-microsecond time scales of transients, higher-order eigenmodes and harmonics are averaged out by transitioning to millisecond time scale of pixel acquisition. Hence, the amount of information available to the external observer ismore » severely limited, and its selection is biased by the chosen data processing method. Here, we report a fundamentally new approach for SPM imaging based on information theory-type analysis of the data stream from the detector. This approach allows full exploration of complex tip-surface interactions, spatial mapping of multidimensional variability of material s properties and their mutual interactions, and SPM imaging at the information channel capacity limit.« less

Thin semi-rigid coaxial cables for cryogenics applications

NASA Astrophysics Data System (ADS)

Kushino, Akihiro; Kasai, Soichi

2013-03-01

We have developed cryogenic coaxial cables for low temperature signal readout from sensitive devices, such as transition edge sensors, superconducting tunnel junctions, and kinetic inductance detectors. In order to reduce heat penetration into cryogenic stages, low thermal conductivity metals were chosen for both center and outer electrical conductors. Various types of coaxial cables, employing stainless-steel, cupro-nickel, brass, beryllium-copper, phosphor-bronze, niobium, and niobium-titanium, were manufactured using drawing dies. Thermal and electrical properties were investigated between 1 and 8 K. Coaxial cables made of copper alloys showed thermal conductance roughly consistent with literature, meanwhile Nb coaxial cable must be affected by the drawing process and thermal conductance was lowered. Attenuation of superconducting Nb and NbTi coaxial cables were observed to be adequately small up to above 10 GHz compared to those of normal conducting coaxial cables, which are subject to the Wiedemann-Franz law. We also measured normal conducting coaxial cables with silver-plated center conductors to improve high frequency performance.

Miniature High-Let Radiation Spectrometer for Space and Avionics Applications

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Stauffer, Craig A.; Brucker, G. J.

1998-01-01

This paper reports on the design and characterization of a small, low power, and low weight instrument, a High-LET Radiation Spectrometer (HiLRS), that measures energy deposited by heavy ions in microelectronic devices. The HILRS operates on pulse-height analysis principles and is designed for space and avionics applications. The detector component in the instrument is based on large scale arrays of p-n junctions. In this system, the pulse amplitude from a particle hit is directly proportional to the particle LET. A prototype flight unit has been fabricated and calibrated using several heavy ions with varying LETs and protons with several energies. The unit has been delivered to the Ballistic Missile Defense Organization (BMDO) c/o the Air Force Research Laboratory in Albuquerque, NM, for integration into the military Space Technology Research Vehicle (STRV), a US-UK cooperative mission. Another version of HILRS is being prepared for delivery in April to the Hubble Space Telescope (HST) project, to fly on the HST Orbital Systems Test (HOST) Platform on a shuttle mission.

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models

DOE PAGES

McLain, Michael Lee; McDonald, Joseph Kyle; Hembree, Charles E.; ...

2017-10-20

Here, the effect of a linear accelerator’s (LINAC’s) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are investigated. The data indicate that the photocurrent response of Si-based RF bipolar junction transistors and RF p-i-n diodes is considerably higher when taking into account the microstructure effects. Similarly, the response of diamond, SiO 2, and GaAs photoconductive detectors (standard radiation diagnostics) is higher when taking into account the microstructure. This has obvious hardness assurance implications when assessing the transient response of devices because the measured photocurrent and dose rate levels could be underestimated if microstructure effectsmore » are not captured. Indeed, the rate the energy is deposited in a material during the microstructure peaks is much higher than the filtered rate which is traditionally measured. In addition, photocurrent models developed with filtered LINAC data may be inherently inaccurate if a device is able to respond to the microstructure.« less

Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models

DOE Office of Scientific and Technical Information (OSTI.GOV)

McLain, Michael Lee; McDonald, Joseph Kyle; Hembree, Charles E.

Here, the effect of a linear accelerator’s (LINAC’s) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are investigated. The data indicate that the photocurrent response of Si-based RF bipolar junction transistors and RF p-i-n diodes is considerably higher when taking into account the microstructure effects. Similarly, the response of diamond, SiO 2, and GaAs photoconductive detectors (standard radiation diagnostics) is higher when taking into account the microstructure. This has obvious hardness assurance implications when assessing the transient response of devices because the measured photocurrent and dose rate levels could be underestimated if microstructure effectsmore » are not captured. Indeed, the rate the energy is deposited in a material during the microstructure peaks is much higher than the filtered rate which is traditionally measured. In addition, photocurrent models developed with filtered LINAC data may be inherently inaccurate if a device is able to respond to the microstructure.« less

Microfluidic devices connected to fused-silica capillaries with minimal dead volume.

PubMed

Bings, N H; Wang, C; Skinner, C D; Colyer, C L; Thibault, P; Harrison, D J

1999-08-01

Fused-silica capillaries have been connected to microfluidic devices for capillary electrophoresis by drilling into the edge of the device using 200-μm tungsten carbide drills. The standard pointed drill bits create a hole with a conical-shaped bottom that leads to a geometric dead volume of 0.7 nL at the junction, and significant band broadening when used with 0.2-nL sample plugs. The plate numbers obtained on the fused-silica capillary connected to the chip were about 16-25% of the predicted numbers. The conical area was removed with a flat-tipped drill bit and the band broadening was substantially eliminated (on average 98% of the predicted plate numbers were observed). All measurements were made while the device was operating with an electrospray from the end of the capillary. The effective dead volume of the flat-bottom connection is minimal and allows microfluidic devices to be connected to a wide variety of external detectors.

Experimental study of a SINIS detector response time at 350 GHz signal frequency

NASA Astrophysics Data System (ADS)

Lemzyakov, S.; Tarasov, M.; Mahashabde, S.; Yusupov, R.; Kuzmin, L.; Edelman, V.

2018-03-01

Response time constant of a SINIS bolometer integrated in an annular ring antenna was measured at a bath temperature of 100 mK. Samples comprising superconducting aluminium electrodes and normal-metal Al/Fe strip connected to electrodes via tunnel junctions were fabricated on oxidized Si substrate using shadow evaporation. The bolometer was illuminated by a fast black-body radiation source through a band-pass filter centered at 350 GHz with a passband of 7 GHz. Radiation source is a thin NiCr film on sapphire substrate. For rectangular 10÷100 μs current pulse the radiation front edge was rather sharp due to low thermal capacitance of NiCr film and low thermal conductivity of substrate at temperatures in the range 1-4 K. The rise time of the response was ~1-10 μs. This time presumably is limited by technical reasons: high dynamic resistance of series array of bolometers and capacitance of a long twisted pair wiring from SINIS bolometer to a room-temperature amplifier.

High operating temperature interband cascade focal plane arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Z.-B.; Godoy, S. E.; Kim, H. S.

2014-08-04

In this paper, we report the initial demonstration of mid-infrared interband cascade (IC) photodetector focal plane arrays with multiple-stage/junction design. The merits of IC photodetectors include low noise and efficient photocarrier extraction, even for zero-bias operation. By adopting enhanced electron barrier design and a total absorber thickness of 0.7 μm, the 5-stage IC detectors show very low dark current (1.10 × 10{sup −7} A/cm{sup 2} at −5 mV and 150 K). Even with un-optimized fabrication and standard commercial (mis-matched) read-out circuit technology, infrared images are obtained by the 320 × 256 IC focal plane array up to 180 K with f/2.3 optics. The minimum noise equivalent temperature differencemore » of 28 mK is obtained at 120 K. These initial results indicate great potential of IC photodetectors, particularly for high operating temperature applications.« less

Spin-motive Force Induced by Domain Wall Dynamics in the Antiferromagnetic Spin Valve

NASA Astrophysics Data System (ADS)

Sugano, Ryoko; Ichimura, Masahiko; Takahashi, Saburo; Maekawa, Sadamichi; Crest Collaboration

2014-03-01

In spite of no net magnetization in antiferromagnetic (AF) textures, the local magnetic properties (Neel magnetization) can be manipulated in a similar fashion to ferromagnetic (F) ones. It is expected that, even in AF metals, spin transfer torques (STTs) lead to the domain wall (DW) motion and that the DW motion induces spin-motive force (SMF). In order to study the Neel magnetization dynamics and the resultant SMF, we treat the nano-structured F1/AF/F2 junction. The F1 and F2 leads behave as a spin current injector and a detector, respectively. Each F lead is fixed in the different magnetization direction. Torsions (DW in AF) are introduced reflecting the fixed magnetization of two F leads. We simulated the STT-induced Neel magnetization dynamics with the injecting current from F1 to F2 and evaluate induced SMF. Based on the adiabatic electron dynamics in the AF texture, Langevin simulations are performed at finite temperature. This research was supported by JST, CREST, Japan.

Intestinal epithelial barrier function and tight junction proteins with heat and exercise

PubMed Central

Zuhl, Micah N.; Moseley, Pope L.

2015-01-01

A single layer of enterocytes and tight junctions (intercellular multiprotein complexes) form the intestinal epithelial barrier that controls transport of molecules through transcellular and paracellular pathways. A dysfunctional or “leaky” intestinal tight junction barrier allows augmented permeation of luminal antigens, endotoxins, and bacteria into the blood stream. Various substances and conditions have been shown to affect the maintenance of the intestinal epithelial tight junction barrier. The primary focus of the present review is to analyze the effects of exertional or nonexertional (passive hyperthermia) heat stress on tight junction barrier function in in vitro and in vivo (animals and humans) models. Our secondary focus is to review changes in tight junction proteins in response to exercise or hyperthermic conditions. Finally, we discuss some pharmacological or nutritional interventions that may affect the cellular mechanisms involved in maintaining homeostasis of the intestinal epithelial tight junction barrier during heat stress or exercise. PMID:26359485

Neogenin recruitment of the WAVE regulatory complex maintains adherens junction stability and tension

PubMed Central

Lee, Natalie K.; Fok, Ka Wai; White, Amanda; Wilson, Nicole H.; O'Leary, Conor J.; Cox, Hayley L.; Michael, Magdalene; Yap, Alpha S.; Cooper, Helen M.

2016-01-01

To maintain tissue integrity during epithelial morphogenesis, adherens junctions (AJs) must resist the mechanical stresses exerted by dynamic tissue movements. Junctional stability is dependent on actomyosin contractility within the actin ring. Here we describe a novel function for the axon guidance receptor, Neogenin, as a key component of the actin nucleation machinery governing junctional stability. Loss of Neogenin perturbs AJs and attenuates junctional tension. Neogenin promotes actin nucleation at AJs by recruiting the Wave regulatory complex (WRC) and Arp2/3. A direct interaction between the Neogenin WIRS domain and the WRC is crucial for the spatially restricted recruitment of the WRC to the junction. Thus, we provide the first example of a functional WIRS–WRC interaction in epithelia. We further show that Neogenin regulates cadherin recycling at the AJ. In summary, we identify Neogenin as a pivotal component of the AJ, where it influences both cadherin dynamics and junctional tension. PMID:27029596

Intestinal epithelial barrier function and tight junction proteins with heat and exercise.

PubMed

Dokladny, Karol; Zuhl, Micah N; Moseley, Pope L

2016-03-15

A single layer of enterocytes and tight junctions (intercellular multiprotein complexes) form the intestinal epithelial barrier that controls transport of molecules through transcellular and paracellular pathways. A dysfunctional or "leaky" intestinal tight junction barrier allows augmented permeation of luminal antigens, endotoxins, and bacteria into the blood stream. Various substances and conditions have been shown to affect the maintenance of the intestinal epithelial tight junction barrier. The primary focus of the present review is to analyze the effects of exertional or nonexertional (passive hyperthermia) heat stress on tight junction barrier function in in vitro and in vivo (animals and humans) models. Our secondary focus is to review changes in tight junction proteins in response to exercise or hyperthermic conditions. Finally, we discuss some pharmacological or nutritional interventions that may affect the cellular mechanisms involved in maintaining homeostasis of the intestinal epithelial tight junction barrier during heat stress or exercise. Copyright © 2016 the American Physiological Society.

Shot noise generated by graphene p–n junctions in the quantum Hall effect regime

PubMed Central

Kumada, N.; Parmentier, F. D.; Hibino, H.; Glattli, D. C.; Roulleau, P.

2015-01-01

Graphene offers a unique system to investigate transport of Dirac Fermions at p–n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p–n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p–n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p–n junction length. For short p–n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p–n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing. PMID:26337067

Single-contact tunneling thermometry

DOEpatents

Maksymovych, Petro

2016-02-23

A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

Single-molecule detection of dihydroazulene photo-thermal reaction using break junction technique

NASA Astrophysics Data System (ADS)

Huang, Cancan; Jevric, Martyn; Borges, Anders; Olsen, Stine T.; Hamill, Joseph M.; Zheng, Jue-Ting; Yang, Yang; Rudnev, Alexander; Baghernejad, Masoud; Broekmann, Peter; Petersen, Anne Ugleholdt; Wandlowski, Thomas; Mikkelsen, Kurt V.; Solomon, Gemma C.; Brøndsted Nielsen, Mogens; Hong, Wenjing

2017-05-01

Charge transport by tunnelling is one of the most ubiquitous elementary processes in nature. Small structural changes in a molecular junction can lead to significant difference in the single-molecule electronic properties, offering a tremendous opportunity to examine a reaction on the single-molecule scale by monitoring the conductance changes. Here, we explore the potential of the single-molecule break junction technique in the detection of photo-thermal reaction processes of a photochromic dihydroazulene/vinylheptafulvene system. Statistical analysis of the break junction experiments provides a quantitative approach for probing the reaction kinetics and reversibility, including the occurrence of isomerization during the reaction. The product ratios observed when switching the system in the junction does not follow those observed in solution studies (both experiment and theory), suggesting that the junction environment was perturbing the process significantly. This study opens the possibility of using nano-structured environments like molecular junctions to tailor product ratios in chemical reactions.

Properties of Josephson Junction Fabricated on Bicrystal Substrate with Different Misorientation Angles

NASA Astrophysics Data System (ADS)

Minotani, Tadashi; Kawakami, Satoru; Kuroki, Yukinori; Enpuku, Keiji

1998-06-01

In order to develop YBa2Cu3O7-δ bicrystal junctions suitable for high-performance superconducting quantum interference device (SQUID), the relationship between the junction properties and the misorientation angle of the bicrystal substrate is studied experimentally. Misorientation angles of 24°, 27°, 30°, 33° and 36.8° are used, and the angular dependencies of junction resistance Rs and critical current Io are investigated. It is shown that values of Rs and Io approximately follow the relation IoRs1.5=const. in these junctions. The obtained results are analyzed in terms of the direct and resonant tunneling mechanisms. It is also shown that values of Rs≈10 Ω and Io≈20 µA can be obtained rather reproducibly when we use the 30° junctions. The properties of this junction are very promising for the development of high-performance SQUID.

All NbN tunnel junction fabrication

NASA Technical Reports Server (NTRS)

Leduc, H. G.; Khanna, S. K.; Stern, J. A.

1987-01-01

The development of SIS tunnel junctions based on NbN for mixer applications in the submillimeter range is reported. The unique technological challenges inherent in the development of all refractory-compound superconductor-based tunnel junctions are highlighted. Current deposition and fabrication techniques are discussed, and the current status of all-NbN tunnel junctions is reported.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

Gap junction systems in the rat vestibular labyrinth: immunohistochemical and ultrastructural analysis.

PubMed

Kikuchi, T; Adams, J C; Paul, D L; Kimura, R S

1994-09-01

The distribution of gap junctions within the vestibular labyrinth was investigated using immunohistochemistry and transmission electron microscopy. Connexin26-like immunoreactivity was observed among supporting cells in each vestibular sensory epithelium. Reaction product was also present in the transitional epithelium of each vestibular endorgan and in the planum semilunatum of crista ampullaris. No connexin26-like immunoreactivity was observed among thin wall epithelial cells or among vestibular dark cells. In addition, fibrocytes within vestibular connective tissue were positively immunostained. Reaction product was also detected in the melanocyte area just beneath dark cells. Ultrastructural observations indicated that a gap junction network of vestibular supporting cells extends to the transitional epithelium and planum semilunatum and forms an isolated epithelial cell gap junction system in each vestibular endorgan. In contrast, no gap junctions were found among wall epithelial cells or among dark cells. Fibrocytes and melanocytes were coupled by gap junctions and belong to the connective tissue cell gap junction system, which is continuous throughout the vestibular system and the cochlea. The possible functional significance of these gap junction systems is discussed.

New high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Daud, T.; Crotty, G. T.

1985-01-01

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Electron optics with ballistic graphene junctions

NASA Astrophysics Data System (ADS)

Chen, Shaowen

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Valley dependent transport in graphene L junction

NASA Astrophysics Data System (ADS)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Metallic Junction Thermoelectric Device Simulations

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2017-01-01

Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

JAM-C regulates tight junctions and integrin-mediated cell adhesion and migration.

PubMed

Mandicourt, Guillaume; Iden, Sandra; Ebnet, Klaus; Aurrand-Lions, Michel; Imhof, Beat A

2007-01-19

Junctional Adhesion Molecules (JAMs) have been described as major components of tight junctions in endothelial and epithelial cells. Tight junctions are crucial for the establishment and maintenance of cell polarity. During tumor development, they are remodeled, enabling neoplastic cells to escape from constraints imposed by intercellular junctions and to adopt a migratory behavior. Using a carcinoma cell line we tested whether JAM-C could affect tight junctions and migratory properties of tumor cells. We show that transfection of JAM-C improves the tight junctional barrier in tumor cells devoid of JAM-C expression. This is dependent on serine 281 in the cytoplasmic tail of JAM-C because serine mutation into alanine abolishes the specific localization of JAM-C in tight junctions and establishment of cell polarity. More importantly, the same mutation stimulates integrin-mediated cell migration and adhesion via the modulation of beta1 and beta3 integrin activation. These results highlight an unexpected function for JAM-C in controlling epithelial cell conversion from a static, polarized state to a pro-migratory phenotype.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Innovative architecture design for high performance organic and hybrid multi-junction solar cells

NASA Astrophysics Data System (ADS)

Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

2017-08-01

The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

Ephaptic coupling rescues conduction failure in weakly coupled cardiac tissue with voltage-gated gap junctions

NASA Astrophysics Data System (ADS)

Weinberg, S. H.

2017-09-01

Electrical conduction in cardiac tissue is usually considered to be primarily facilitated by gap junctions, providing a pathway between the intracellular spaces of neighboring cells. However, recent studies have highlighted the role of coupling via extracellular electric fields, also known as ephaptic coupling, particularly in the setting of reduced gap junction expression. Further, in the setting of reduced gap junctional coupling, voltage-dependent gating of gap junctions, an oft-neglected biophysical property in computational studies, produces a positive feedback that promotes conduction failure. We hypothesized that ephaptic coupling can break the positive feedback loop and rescue conduction failure in weakly coupled cardiac tissue. In a computational tissue model incorporating voltage-gated gap junctions and ephaptic coupling, we demonstrate that ephaptic coupling can rescue conduction failure in weakly coupled tissue. Further, ephaptic coupling increased conduction velocity in weakly coupled tissue, and importantly, reduced the minimum gap junctional coupling necessary for conduction, most prominently at fast pacing rates. Finally, we find that, although neglecting gap junction voltage-gating results in negligible differences in well coupled tissue, more significant differences occur in weakly coupled tissue, greatly underestimating the minimal gap junctional coupling that can maintain conduction. Our study suggests that ephaptic coupling plays a conduction-preserving role, particularly at rapid heart rates.

Tuning of optical and electrical properties of wide band gap Fe:SnO2/Li:NiO p- n junctions using 80 MeV oxygen ion beam

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Avasthi, D. K.; Joshi, U. S.

2016-12-01

Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p- n junction diode have been investigated for advanced electronics application. Fe:SnO2/Li:NiO p- n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO2 and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p- n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p- n junction diode was irradiated to 80 MeV O+6 ions with 1 × 1012 ions/cm2 fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p- n junction diode, O+6 ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p- n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p- n junction diode.

Real-space microscopic electrical imaging of n+-p junction beneath front-side Ag contact of multicrystalline Si solar cells

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

2012-04-01

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

MoRe-based tunnel junctions and their characteristics

NASA Astrophysics Data System (ADS)

Shaternik, V.; Larkin, S.; Noskov, V.; Chubatyy, V.; Sizontov, V.; Miroshnikov, A.; Karmazin, A.

2008-02-01

Perspective Josephson Mo-Re alloy-oxide-Pb, Mo-Re alloy-normal metal-oxide-Pb and Mo-Re alloy-normal metal-oxide-normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin (~50-100 nm) MoRe superconducting films are deposited on Al2O3 substrates by using a dc magnetron sputtering of MoRe target. Normal metal (Sn, Al) thin films are deposited on the MoRe films surfaces by thermal evaporation of metals in vacuum and oxidized to fabricate junctions oxide barriers. Quasiparticle I-V curves of the fabricated junctions were measured in wide range of voltages. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies. The result of the comparison of experimental quasiparticle I-V curves and calculated ones is proposed and discussed. Also I-V curves of the fabricated junctions have been measured under microwave irradiation with 60 GHz frequency, clear Shapiro steps in the measured I-V curves were observed and discussed.

Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-04-15

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, whichmore » is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.« less

Effects of geometric configuration on droplet generation in Y-junctions and anti-Y-junctions microchannels

NASA Astrophysics Data System (ADS)

Liu, Zhao-Miao; Liu, Li-Kun; Shen, Feng

2015-10-01

Droplets generation in Y-junctions and anti-Y-junctions microchannels are experimentally studied using a high speed digital microscopic system and numerical simulation. Geometric configuration of a microchannel, such as Y-angle (90°, 135°, -90° and -135°), channel depth and other factors have been taken into consideration. It is found that droplets generated in anti-Y-junctions have a smaller size and a shorter generation cycle compared with those in Y-junctions under the same experimental conditions. Through observing the internal velocity field, the vortex appearing in continuous phase in anti-Y-junctions is one of the key factors for the difference of droplet size and generation cycle. It is found that droplet size is bigger and generation cycle is longer when the absolute angle value of the intersection between the continuous and the dispersed phases (i.e., the angle between the main channel and the continuous phase or the dispersed phase channel) increases. The droplet's size is influenced by the Y-angle, which varies with the channel depth in Y-junctions. The Y-angle has a positive effect on the droplet generation cycle, but a smaller height-width ratio will enhance the impact of a continuous and dispersed phase's intersection angle on the droplet generation cycle in Y-junctions microchannels.

Three-dimensional modeling and quantitative analysis of gap junction distributions in cardiac tissue.

PubMed

Lackey, Daniel P; Carruth, Eric D; Lasher, Richard A; Boenisch, Jan; Sachse, Frank B; Hitchcock, Robert W

2011-11-01

Gap junctions play a fundamental role in intercellular communication in cardiac tissue. Various types of heart disease including hypertrophy and ischemia are associated with alterations of the spatial arrangement of gap junctions. Previous studies applied two-dimensional optical and electron-microscopy to visualize gap junction arrangements. In normal cardiomyocytes, gap junctions were primarily found at cell ends, but can be found also in more central regions. In this study, we extended these approaches toward three-dimensional reconstruction of gap junction distributions based on high-resolution scanning confocal microscopy and image processing. We developed methods for quantitative characterization of gap junction distributions based on analysis of intensity profiles along the principal axes of myocytes. The analyses characterized gap junction polarization at cell ends and higher-order statistical image moments of intensity profiles. The methodology was tested in rat ventricular myocardium. Our analysis yielded novel quantitative data on gap junction distributions. In particular, the analysis demonstrated that the distributions exhibit significant variability with respect to polarization, skewness, and kurtosis. We suggest that this methodology provides a quantitative alternative to current approaches based on visual inspection, with applications in particular in characterization of engineered and diseased myocardium. Furthermore, we propose that these data provide improved input for computational modeling of cardiac conduction.

Structure and function of gap junction proteins: role of gap junction proteins in embryonic heart development.

PubMed

Ahir, Bhavesh K; Pratten, Margaret K

2014-01-01

Intercellular (cell-to-cell) communication is a crucial and complex mechanism during embryonic heart development. In the cardiovascular system, the beating of the heart is a dynamic and key regulatory process, which is functionally regulated by the coordinated spread of electrical activity through heart muscle cells. Heart tissues are composed of individual cells, each bearing specialized cell surface membrane structures called gap junctions that permit the intercellular exchange of ions and low molecular weight molecules. Gap junction channels are essential in normal heart function and they assist in the mediated spread of electrical impulses that stimulate synchronized contraction (via an electrical syncytium) of cardiac tissues. This present review describes the current knowledge of gap junction biology. In the first part, we summarise some relevant biochemical and physiological properties of gap junction proteins, including their structure and function. In the second part, we review the current evidence demonstrating the role of gap junction proteins in embryonic development with particular reference to those involved in embryonic heart development. Genetics and transgenic animal studies of gap junction protein function in embryonic heart development are considered and the alteration/disruption of gap junction intercellular communication which may lead to abnormal heart development is also discussed.

MarvelD3 couples tight junctions to the MEKK1–JNK pathway to regulate cell behavior and survival

PubMed Central

Steed, Emily; Elbediwy, Ahmed; Vacca, Barbara; Dupasquier, Sébastien; Hemkemeyer, Sandra A.; Suddason, Tesha; Costa, Ana C.; Beaudry, Jean-Bernard; Zihni, Ceniz; Gallagher, Ewen; Pierreux, Christophe E.

2014-01-01

MarvelD3 is a transmembrane component of tight junctions, but there is little evidence for a direct involvement in the junctional permeability barrier. Tight junctions also regulate signaling mechanisms that guide cell proliferation; however, the transmembrane components that link the junction to such signaling pathways are not well understood. In this paper, we show that MarvelD3 is a dynamic junctional regulator of the MEKK1–c-Jun NH2-terminal kinase (JNK) pathway. Loss of MarvelD3 expression in differentiating Caco-2 cells resulted in increased cell migration and proliferation, whereas reexpression in a metastatic tumor cell line inhibited migration, proliferation, and in vivo tumor formation. Expression levels of MarvelD3 inversely correlated with JNK activity, as MarvelD3 recruited MEKK1 to junctions, leading to down-regulation of JNK phosphorylation and inhibition of JNK-regulated transcriptional mechanisms. Interplay between MarvelD3 internalization and JNK activation tuned activation of MEKK1 during osmotic stress, leading to junction dissociation and cell death in MarvelD3-depleted cells. MarvelD3 thus couples tight junctions to the MEKK1–JNK pathway to regulate cell behavior and survival. PMID:24567356

Characterization of NbN films and tunnel junctions

NASA Technical Reports Server (NTRS)

Stern, J. A.; Leduc, H. G.

1991-01-01

Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.

The fallopian tube-peritoneal junction: a potential site of carcinogenesis.

PubMed

Seidman, Jeffrey D; Yemelyanova, Anna; Zaino, Richard J; Kurman, Robert J

2011-01-01

Junctions between different types of epithelia are hot spots for carcinogenesis, but the junction of the peritoneal mesothelium with the fallopian tubal epithelium, the tubal-peritoneal junction, has not been characterized earlier. A total of 613 junctional foci in 228 fallopian tube specimens from 182 patients who underwent surgery for a variety of indications, including 27 risk-reducing salpingo-oophorectomy specimens, were studied. Edema, congestion, and dilated lymphatic channels were commonly present. Transitional metaplasia was found at the junction in 20% of patients and mesothelial hyperplasia in 17%. Inflammation at the junction was seen predominantly in patients with salpingitis, torsion, or tubal pregnancy. Ovarian-type stroma was found at the junction in 5% of patients, and was found elsewhere in the tubal lamina propria in an additional 27% of patients. Findings in risk-reducing salpingo-oophorectomy specimens in women with BRCA mutations, a personal history of breast cancer, and/or a family history of breast/ovarian cancer were similar to those in controls. Transitional metaplasia specifically localizes to this junction, and is the probable source of Walthard cell nests. The recently highlighted significance of fimbrial tubal epithelium in the origin of serous ovarian carcinomas and a study suggesting that mucinous and Brenner tumors may arise from transitional-type epithelium in this location suggest that the tubal-peritoneal junction may play a role in the development of these tumors. This is the first comprehensive description of a hitherto unrecognized transitional zone in the adnexa.

Junction Potentials Bias Measurements of Ion Exchange Membrane Permselectivity.

PubMed

Kingsbury, Ryan S; Flotron, Sophie; Zhu, Shan; Call, Douglas F; Coronell, Orlando

2018-04-17

Ion exchange membranes (IEMs) are versatile materials relevant to a variety of water and waste treatment, energy production, and industrial separation processes. The defining characteristic of IEMs is their ability to selectively allow positive or negative ions to permeate, which is referred to as permselectivity. Measured values of permselectivity that equal unity (corresponding to a perfectly selective membrane) or exceed unity (theoretically impossible) have been reported for cation exchange membranes (CEMs). Such nonphysical results call into question our ability to correctly measure this crucial membrane property. Because weighing errors, temperature, and measurement uncertainty have been shown to not explain these anomalous permselectivity results, we hypothesized that a possible explanation are junction potentials that occur at the tips of reference electrodes. In this work, we tested this hypothesis by comparing permselectivity values obtained from bare Ag/AgCl wire electrodes (which have no junction) to values obtained from single-junction reference electrodes containing two different electrolytes. We show that permselectivity values obtained using reference electrodes with junctions were greater than unity for CEMs. In contrast, electrodes without junctions always produced permselectivities lower than unity. Electrodes with junctions also resulted in artificially low permselectivity values for AEMs compared to electrodes without junctions. Thus, we conclude that junctions in reference electrodes introduce two biases into results in the IEM literature: (i) permselectivity values larger than unity for CEMs and (ii) lower permselectivity values for AEMs compared to those for CEMs. These biases can be avoided by using electrodes without a junction.

Dielectric properties of biological tissues in which cells are connected by communicating junctions

NASA Astrophysics Data System (ADS)

Asami, Koji

2007-06-01

The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities Pj, the low-frequency (LF) relaxation curve became broader, especially at Pj of 0.2-0.5, and its intensity was proportional to Pj up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues.

The beneficial effects of cumulus cells and oocyte-cumulus cell gap junctions depends on oocyte maturation and fertilization methods in mice.

PubMed

Zhou, Cheng-Jie; Wu, Sha-Na; Shen, Jiang-Peng; Wang, Dong-Hui; Kong, Xiang-Wei; Lu, Angeleem; Li, Yan-Jiao; Zhou, Hong-Xia; Zhao, Yue-Fang; Liang, Cheng-Guang

2016-01-01

Cumulus cells are a group of closely associated granulosa cells that surround and nourish oocytes. Previous studies have shown that cumulus cells contribute to oocyte maturation and fertilization through gap junction communication. However, it is not known how this gap junction signaling affects in vivo versus in vitro maturation of oocytes, and their subsequent fertilization and embryonic development following insemination. Therefore, in our study, we performed mouse oocyte maturation and insemination using in vivo- or in vitro-matured oocyte-cumulus complexes (OCCs, which retain gap junctions between the cumulus cells and the oocytes), in vitro-matured, denuded oocytes co-cultured with cumulus cells (DCs, which lack gap junctions between the cumulus cells and the oocytes), and in vitro-matured, denuded oocytes without cumulus cells (DOs). Using these models, we were able to analyze the effects of gap junction signaling on oocyte maturation, fertilization, and early embryo development. We found that gap junctions were necessary for both in vivo and in vitro oocyte maturation. In addition, for oocytes matured in vivo, the presence of cumulus cells during insemination improved fertilization and blastocyst formation, and this improvement was strengthened by gap junctions. Moreover, for oocytes matured in vitro, the presence of cumulus cells during insemination improved fertilization, but not blastocyst formation, and this improvement was independent of gap junctions. Our results demonstrate, for the first time, that the beneficial effect of gap junction signaling from cumulus cells depends on oocyte maturation and fertilization methods.

Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.

In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

DOE PAGES

Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; ...

2014-12-17

In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

Increase of gap junction activities in SW480 human colorectal cancer cells.

PubMed

Bigelow, Kristina; Nguyen, Thu A

2014-07-09

Colorectal cancer is one of the most common cancers in the United States with an early detection rate of only 39%. Colorectal cancer cells along with other cancer cells exhibit many deficiencies in cell-to-cell communication, particularly gap junctional intercellular communication (GJIC). GJIC has been reported to diminish as cancer cells progress. Gap junctions are intercellular channels composed of connexin proteins, which mediate the direct passage of small molecules from one cell to the next. They are involved in the regulation of the cell cycle, cell differentiation, and cell signaling. Since the regulation of gap junctions is lost in colorectal cancer cells, the goal of this study is to determine the effect of GJIC restoration in colorectal cancer cells. Gap Junction Activity Assay and protein analysis were performed to evaluate the effects of overexpression of connexin 43 (Cx43) and treatment of PQ1, a small molecule, on GJIC. Overexpression of Cx43 in SW480 colorectal cancer cells causes a 6-fold increase of gap junction activity compared to control. This suggests that overexpressing Cx43 can restore GJIC. Furthermore, small molecule like PQ1 directly targeting gap junction channel was used to increase GJIC. Gap junction enhancers, PQ1, at 200 nM showed a 4-fold increase of gap junction activity in SW480 cells. A shift from the P0 to the P2 isoform of Cx43 was seen after 1 hour treatment with 200 nM PQ1. Overexpression of Cx43 and treatment of PQ1 can directly increase gap junction activity. The findings provide an important implication in which restoration of gap junction activity can be targeted for drug development.

Gap junctions in Malpighian tubules of Aedes aegypti.

PubMed

Weng, Xing-He; Piermarini, Peter M; Yamahiro, Atsuko; Yu, Ming-Jiun; Aneshansley, Daniel J; Beyenbach, Klaus W

2008-02-01

We present electrical, physiological and molecular evidence for substantial electrical coupling of epithelial cells in Malpighian tubules via gap junctions. Current was injected into one principal cell of the isolated Malpighian tubule and membrane voltage deflections were measured in that cell and in two neighboring principal cells. By short-circuiting the transepithelial voltage with the diuretic peptide leucokinin-VIII we largely eliminated electrical coupling of principal cells through the tubule lumen, thereby allowing coupling through gap junctions to be analyzed. The analysis of an equivalent electrical circuit of the tubule yielded an average gap-junction resistance (R(gj)) of 431 kOmega between two cells. This resistance would stem from 6190 open gap-junctional channels, assuming the high single gap-junction conductance of 375 pS found in vertebrate tissues. The addition of the calcium ionophore A23187 (2 micromol l(-1)) to the peritubular Ringer bath containing 1.7 mmol l(-1) Ca(2+) did not affect the gap-junction resistance, but metabolic inhibition of the tubule with dinitrophenol (0.5 mmol l(-1)) increased the gap-junction resistance 66-fold, suggesting the regulation of gap junctions by ATP. Lucifer Yellow injected into a principal cell did not appear in neighboring principal cells. Thus, gap junctions allow the passage of current but not Lucifer Yellow. Using RT-PCR we found evidence for the expression of innexins 1, 2, 3 and 7 (named after their homologues in Drosophila) in Malpighian tubules. The physiological demonstration of gap junctions and the molecular evidence for innexin in Malpighian tubules of Aedes aegypti call for the double cable model of the tubule, which will improve the measurement and the interpretation of electrophysiological data collected from Malpighian tubules.

A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hadley, Austin; Ding, George X., E-mail: george.ding@vanderbilt.edu

2014-01-01

Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fieldsmore » and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans.« less

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect smooth interface fails to explain such behavior, hence, we apply a modified emission theory with Gaussian distribution of Schottky barrier heights. The modified theory, applicable to inhomogeneous interfaces, explains the temperature dependent behavior of our Schottky junctions and gives a temperature independent mean barrier height. We attribute the inhomogeneous barrier height to the presence of graphene ripples and ridges in case of SiC and MoS2 while surface states and trapped charges at the interface is dominating in Si and GaAs. Additionally, we observe bias dependent current and barrier height in reverse bias regime also for all Schottky junctions. To explain such behavior, we consider two types of reverse bias conduction mechanisms; Poole-Frenkel and Schottky emission. We find that Poole-Frenkel emission explains the characteristics of graphene/SiC junctions very well. However, both the mechanism fails to interpret the behavior of graphene/Si and graphene/GaAs Schottky junctions. These findings provide insight into the fundamental physics at the interface of graphene/semiconductor junctions.

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany Maria

A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this complicated system, first, studies of junctions with only a single ferromagnetic junction were required to determine the 0-pi transition thickness of that material, the decay of the critical current through the junction with thickness, and the switching field of the material. The materials studied included NiFeMo, NiFe, Ni, and NiFeCo. Additionally, roughness studies of several different superconducting base electrodes and normal metal buffer and spacer layers were performed to determine the optimum junction layers. The ferromagnetic layers used were on the order of 1-2 nm thick, so a smooth growth template is imperative to maintain continuous films with in-plane magnetizations. Lastly, single junction spin-valve samples were studied. We are not equipped to measure the phase of a single junction, but series of samples where one ferromagnetic layer is systematically varied in thickness can inform the proper thicknesses needed for 0-pi switching based on relative critical current values between the parallel and antiparallel magnetic configurations. Utilizing this background information, two spin-valve samples were incorporated in a superconducting loop so that the relative phase of the two junctions could be investigated. Through this process, the first phase-controllable ferromagnetic Josephson junctions were experimentally demonstrated using phase-sensitive measurement techniques. This provided the proof of concept for the Josephson Magnetic Random Access Memory (JMRAM), a superconducting memory system in development at Northrop Grumman, with whom we collaborate on this work. Phase-controllable systems were successfully demonstrated using two different magnetic material stacks and verified with several analysis techniques.

75 FR 8990 - Notice of Public Meeting, Northwest Colorado Resource Advisory Council Subgroup for McInnis...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-26

... Land Management Grand Junction Field Office at 2815 H Road, Grand Junction, CO 81506. The meeting will... Conservation Area Manager, 2815 H Road, Grand Junction, CO; telephone 970-244-3049; or Erin Curtis, Public Affairs Specialist, 2815 H Road, Grand Junction, CO, telephone 970-244-3097. SUPPLEMENTARY INFORMATION...

The persistent current and energy spectrum on a driven mesoscopic LC-circuit with Josephson junction

NASA Astrophysics Data System (ADS)

Pahlavanias, Hassan

2018-03-01

The quantum theory for a mesoscopic electric circuit including a Josephson junction with charge discreteness is studied. By considering coupling energy of the mesoscopic capacitor in Josephson junction device, a Hamiltonian describing the dynamics of a quantum mesoscopic electric LC-circuit with charge discreteness is introduced. We first calculate the persistent current on a quantum driven ring including Josephson junction. Then we obtain the persistent current and energy spectrum of a quantum mesoscopic electrical circuit which includes capacitor, inductor, time-dependent external source and Josephson junction.

Series array of highly hysteretic Josephson junctions coupled to a microstrip resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costabile, G.; Andreone, D.; Lacquaniti, V.

1985-07-15

We have tested a new device based on a 12 junction array coupled to a resonator. We have explored the feasibility of the phase lock for all the junctions at the same biasing current, which yields voltage quantization across each junction, eliminating the need to individually bias the junctions. The whole rf structure has been realized by stripline technology. The resonator is fed by a 50-..cap omega.. line and is decoupled from the dc circuit by elliptical low-pass filters inserted in the bias leads.

Naturally formed graded junction for organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shao, Yan; Yang, Yang

2003-09-01

In this letter, we report naturally-formed graded junctions (NFGJ) for organic light-emitting diodes (OLEDs). These junctions are fabricated using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. Upon heating, materials sublimate sequentially according to their vaporizing temperatures forming the graded junction. Two kinds of graded structures, sharp and shallow graded junctions, can be formed based on the thermal properties of the selected materials. The NFGJ OLEDs have shown excellent performance in both brightness and lifetime compared with heterojunction devices.

Emergent central pattern generator behavior in gap-junction-coupled Hodgkin-Huxley style neuron model.

PubMed

Horn, Kyle G; Memelli, Heraldo; Solomon, Irene C

2012-01-01

Most models of central pattern generators (CPGs) involve two distinct nuclei mutually inhibiting one another via synapses. Here, we present a single-nucleus model of biologically realistic Hodgkin-Huxley neurons with random gap junction coupling. Despite no explicit division of neurons into two groups, we observe a spontaneous division of neurons into two distinct firing groups. In addition, we also demonstrate this phenomenon in a simplified version of the model, highlighting the importance of afterhyperpolarization currents (I(AHP)) to CPGs utilizing gap junction coupling. The properties of these CPGs also appear sensitive to gap junction conductance, probability of gap junction coupling between cells, topology of gap junction coupling, and, to a lesser extent, input current into our simulated nucleus.

Fabrication of superconductor-ferromagnet-insulator-superconductor Josephson junctions with critical current uniformity applicable to integrated circuits

NASA Astrophysics Data System (ADS)

Ito, Hiroshi; Taniguchi, Soya; Ishikawa, Kouta; Akaike, Hiroyuki; Fujimaki, Akira

2017-03-01

Nb Josephson junctions (JJs) were fabricated with a Pd89Ni11 ferromagnetic interlayer and an AlO x tunnel barrier layer for use in large-scale superconducting integrated circuits. The junctions had a small critical current (I c) spread, where the standard deviation 1σ was less than 2% at 4.2 K for junctions with the same designed size. It was observed that the electrical behavior of the junctions could be controlled by manipulating the film thickness of the PdNi interlayer. The junctions behaved as a π-JJ for thicknesses of 9 and 11 nm, showing 1σ in the I c spread of 1.2% for 9 nm.

Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-08-01

×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

Effect of intrinsic curvature and edge tension on the stability of binary mixed-membrane three-junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gardner, Jasmine M.; Abrams, Cameron F.; Deserno, Markus

We use a combination of coarse-grained molecular dynamics simulations and theoretical modeling to examine three-junctions in mixed lipid bilayer membranes. These junctions are localized defect lines in which three bilayers merge in such a way that each bilayer shares one monolayer with one of the other two bilayers. The resulting local morphology is non-lamellar, resembling the threefold symmetric defect lines in inverse hexagonal phases, but it regularly occurs during membrane fission and fusion events. We realize a system of junctions by setting up a honeycomb lattice, which in its primitive cell contains two hexagons and four three-line junctions, permitting usmore » to study their stability as well as their line tension. We specifically consider the effects of lipid composition and intrinsic curvature in binary mixtures, which contain a fraction of negatively curved lipids in a curvature-neutral background phase. Three-junction stability results from a competition between the junction and an open edge, which arises if one of the three bilayers detaches from the other two. We show that the stable phase is the one with the lower defect line tension. The strong and opposite monolayer curvatures present in junctions and edges enhance the mole fraction of negatively curved lipids in junctions and deplete it in edges. This lipid sorting affects the two line tensions and in turn the relative stability of the two phases. It also leads to a subtle entropic barrier for the transition between junction and edge that is absent in uniform membranes.« less

Experimental testing and modeling analysis of solute mixing at water distribution pipe junctions.

PubMed

Shao, Yu; Jeffrey Yang, Y; Jiang, Lijie; Yu, Tingchao; Shen, Cheng

2014-06-01

Flow dynamics at a pipe junction controls particle trajectories, solute mixing and concentrations in downstream pipes. The effect can lead to different outcomes of water quality modeling and, hence, drinking water management in a distribution network. Here we have investigated solute mixing behavior in pipe junctions of five hydraulic types, for which flow distribution factors and analytical equations for network modeling are proposed. First, based on experiments, the degree of mixing at a cross is found to be a function of flow momentum ratio that defines a junction flow distribution pattern and the degree of departure from complete mixing. Corresponding analytical solutions are also validated using computational-fluid-dynamics (CFD) simulations. Second, the analytical mixing model is further extended to double-Tee junctions. Correspondingly the flow distribution factor is modified to account for hydraulic departure from a cross configuration. For a double-Tee(A) junction, CFD simulations show that the solute mixing depends on flow momentum ratio and connection pipe length, whereas the mixing at double-Tee(B) is well represented by two independent single-Tee junctions with a potential water stagnation zone in between. Notably, double-Tee junctions differ significantly from a cross in solute mixing and transport. However, it is noted that these pipe connections are widely, but incorrectly, simplified as cross junctions of assumed complete solute mixing in network skeletonization and water quality modeling. For the studied pipe junction types, analytical solutions are proposed to characterize the incomplete mixing and hence may allow better water quality simulation in a distribution network. Published by Elsevier Ltd.

Low Level Pro-inflammatory Cytokines Decrease Connexin36 Gap Junction Coupling in Mouse and Human Islets through Nitric Oxide-mediated Protein Kinase Cδ*

PubMed Central

Farnsworth, Nikki L.; Walter, Rachelle L.; Hemmati, Alireza; Westacott, Matthew J.; Benninger, Richard K. P.

2016-01-01

Pro-inflammatory cytokines contribute to the decline in islet function during the development of diabetes. Cytokines can disrupt insulin secretion and calcium dynamics; however, the mechanisms underlying this are poorly understood. Connexin36 gap junctions coordinate glucose-induced calcium oscillations and pulsatile insulin secretion across the islet. Loss of gap junction coupling disrupts these dynamics, similar to that observed during the development of diabetes. This study investigates the mechanisms by which pro-inflammatory cytokines mediate gap junction coupling. Specifically, as cytokine-induced NO can activate PKCδ, we aimed to understand the role of PKCδ in modulating cytokine-induced changes in gap junction coupling. Isolated mouse and human islets were treated with varying levels of a cytokine mixture containing TNF-α, IL-1β, and IFN-γ. Islet dysfunction was measured by insulin secretion, calcium dynamics, and gap junction coupling. Modulators of PKCδ and NO were applied to determine their respective roles in modulating gap junction coupling. High levels of cytokines caused cell death and decreased insulin secretion. Low levels of cytokine treatment disrupted calcium dynamics and decreased gap junction coupling, in the absence of disruptions to insulin secretion. Decreases in gap junction coupling were dependent on NO-regulated PKCδ, and altered membrane organization of connexin36. This study defines several mechanisms underlying the disruption to gap junction coupling under conditions associated with the development of diabetes. These mechanisms will allow for greater understanding of islet dysfunction and suggest ways to ameliorate this dysfunction during the development of diabetes. PMID:26668311

Two Classes of Gap Junction Channels Mediate Soma-Germline Interactions Essential for Germline Proliferation and Gametogenesis in Caenorhabditis elegans

PubMed Central

Starich, Todd A.; Hall, David H.; Greenstein, David

2014-01-01

In all animals examined, somatic cells of the gonad control multiple biological processes essential for germline development. Gap junction channels, composed of connexins in vertebrates and innexins in invertebrates, permit direct intercellular communication between cells and frequently form between somatic gonadal cells and germ cells. Gap junctions comprise hexameric hemichannels in apposing cells that dock to form channels for the exchange of small molecules. Here we report essential roles for two classes of gap junction channels, composed of five innexin proteins, in supporting the proliferation of germline stem cells and gametogenesis in the nematode Caenorhabditis elegans. Transmission electron microscopy of freeze-fracture replicas and fluorescence microscopy show that gap junctions between somatic cells and germ cells are more extensive than previously appreciated and are found throughout the gonad. One class of gap junctions, composed of INX-8 and INX-9 in the soma and INX-14 and INX-21 in the germ line, is required for the proliferation and differentiation of germline stem cells. Genetic epistasis experiments establish a role for these gap junction channels in germline proliferation independent of the glp-1/Notch pathway. A second class of gap junctions, composed of somatic INX-8 and INX-9 and germline INX-14 and INX-22, is required for the negative regulation of oocyte meiotic maturation. Rescue of gap junction channel formation in the stem cell niche rescues germline proliferation and uncovers a later channel requirement for embryonic viability. This analysis reveals gap junctions as a central organizing feature of many soma–germline interactions in C. elegans. PMID:25195067

The adherens junction is lost during normal pregnancy but not during ovarian hyperstimulated pregnancy.

PubMed

Dowland, Samson N; Madawala, Romanthi J; Lindsay, Laura A; Murphy, Christopher R

2016-03-01

During early pregnancy in the rat, the luminal uterine epithelial cells (UECs) must transform to a receptive state to permit blastocyst attachment and implantation. The implantation process involves penetration of the epithelial barrier, so it is expected that the transformation of UECs includes alterations in the lateral junctional complex. Previous studies have demonstrated a deepening of the tight junction (zonula occludens) and a reduction in the number of desmosomes (macula adherens) in UECs at the time of implantation. However, the adherens junction (zonula adherens), which is primarily responsible for cell-cell adhesion, has been little studied during early pregnancy. This study investigated the adherens junction in rat UECs during the early stages of normal pregnancy and ovarian hyperstimulated (OH) pregnancy using transmission electron microscopy. The adherens junction is present in UECs at the time of fertilisation, but is lost at the time of blastocyst implantation during normal pregnancy. Interestingly, at the time of implantation after OH, adherens junctions are retained and may impede blastocyst penetration of the epithelium. The adherens junction anchors the actin-based terminal web, which is known to be disrupted in UECs during early pregnancy. However, artificial disruption of the terminal web, using cytochalasin D, did not cause removal of the adherens junction in UECs. This study revealed that adherens junction disassembly occurs during early pregnancy, but that this process does not occur during OH pregnancy. Such disassembly does not appear to depend on the disruption of the terminal web. Copyright © 2015 Elsevier GmbH. All rights reserved.

Structure activity relationship of synaptic and junctional neurotransmission.

PubMed

Goyal, Raj K; Chaudhury, Arun

2013-06-01

Chemical neurotransmission may include transmission to local or remote sites. Locally, contact between 'bare' portions of the bulbous nerve terminal termed a varicosity and the effector cell may be in the form of either synapse or non-synaptic contact. Traditionally, all local transmissions between nerves and effector cells are considered synaptic in nature. This is particularly true for communication between neurons. However, communication between nerves and other effectors such as smooth muscles has been described as nonsynaptic or junctional in nature. Nonsynaptic neurotransmission is now also increasingly recognized in the CNS. This review focuses on the relationship between structure and function that orchestrate synaptic and junctional neurotransmissions. A synapse is a specialized focal contact between the presynaptic active zone capable of ultrafast release of soluble transmitters and the postsynaptic density that cluster ionotropic receptors. The presynaptic and the postsynaptic areas are separated by the 'closed' synaptic cavity. The physiological hallmark of the synapse is ultrafast postsynaptic potentials lasting milliseconds. In contrast, junctions are juxtapositions of nerve terminals and the effector cells without clear synaptic specializations and the junctional space is 'open' to the extracellular space. Based on the nature of the transmitters, postjunctional receptors and their separation from the release sites, the junctions can be divided into 'close' and 'wide' junctions. Functionally, the 'close' and the 'wide' junctions can be distinguished by postjunctional potentials lasting ~1s and tens of seconds, respectively. Both synaptic and junctional communications are common between neurons; however, junctional transmission is the rule at many neuro-non-neural effectors. Published by Elsevier B.V.

Structure activity relationship of synaptic and junctional neurotransmission

PubMed Central

Goyal, Raj K; Chaudhury, Arun

2013-01-01

Chemical neurotransmission may include transmission to local or remote sites. Locally, contact between ‘bare’ portions of the bulbous nerve terminal termed a varicosity and the effector cell may be in the form of either synapse or non-synaptic contact. Traditionally, all local transmissions between nerves and effector cells are considered synaptic in nature. This is particularly true for communication between neurons. However, communication between nerves and other effectors such as smooth muscles has been described as nonsynaptic or junctional in nature. Nonsynaptic neurotransmission is now also increasing recognized in the CNS. This review focuses on the relationship between structure and function that orchestrate synaptic and junctional neurotransmissions. A synapse is a specialized focal contact between the presynaptic active zone capable for ultrafast release of soluble transmitters and the postsynaptic density that cluster ionotropic receptors. The presynaptic and the postsynaptic areas are separated by the ‘closed’ synaptic cavity. The physiological hallmark of the synapse is ultrafast postsynaptic potentials lasting in milliseconds. In contrast, junctions are juxtapositions of nerve terminals and the effector cells without clear synaptic specializations and the junctional space is ‘open’ to the extracellular space. Based on the nature of the transmitters, postjunctional receptors and their separation from the release sites, the junctions can be divided into ‘close’ and ‘wide’ junctions. Functionally, the ‘close’ and the ‘wide’ junctions can be distinguished by postjunctional potentials lasting ~1 second and 10s of seconds, respectively. Both synaptic and junctional communications are common between neurons; however, junctional transmission is the rule at many neuro-non-neural effectors. PMID:23535140

Activation of Akt, not connexin 43 protein ubiquitination, regulates gap junction stability.

PubMed

Dunn, Clarence A; Su, Vivian; Lau, Alan F; Lampe, Paul D

2012-01-20

The pore-forming gap junctional protein connexin 43 (Cx43) has a short (1-3 h) half-life in cells in tissue culture and in whole tissues. Although critical for cellular function in all tissues, the process of gap junction turnover is not well understood because treatment of cells with a proteasomal inhibitor results in larger gap junctions but little change in total Cx43 protein whereas lysosomal inhibitors increase total, mostly nonjunctional Cx43. To better understand turnover and identify potential sites of Cx43 ubiquitination, we prepared constructs of Cx43 with different lysines converted to arginines. However, when transfected into cells, a mutant version of Cx43 with all lysines converted to arginines behaved similarly to wild type in the presence of proteasomal and lysosomal inhibitors, indicating that ubiquitination of Cx43 did not appear to be playing a role in gap junction stability. Through the use of inhibitors and dominant negative constructs, we found that Akt (protein kinase B) activity controlled gap junction stability and was necessary to form larger stable gap junctions. Akt activation was increased upon proteasomal inhibition and resulted in phosphorylation of Cx43 at Akt phosphorylation consensus sites. Thus, we conclude that Cx43 ubiquitination is not necessary for the regulation of Cx43 turnover; rather, Akt activity, probably through direct phosphorylation of Cx43, controls gap junction stability. This linkage of a kinase involved in controlling cell survival and growth to gap junction stability may mechanistically explain how gap junctions and Akt play similar regulatory roles.

Gap junctional communication modulates gene transcription by altering the recruitment of Sp1 and Sp3 to connexin-response elements in osteoblast promoters

NASA Technical Reports Server (NTRS)

Stains, Joseph P.; Lecanda, Fernando; Screen, Joanne; Towler, Dwight A.; Civitelli, Roberto

2003-01-01

Loss-of-function mutations of gap junction proteins, connexins, represent a mechanism of disease in a variety of tissues. We have shown that recessive (gene deletion) or dominant (connexin45 overexpression) disruption of connexin43 function results in osteoblast dysfunction and abnormal expression of osteoblast genes, including down-regulation of osteocalcin transcription. To elucidate the molecular mechanisms of gap junction-sensitive transcriptional regulation, we systematically analyzed the rat osteocalcin promoter for sensitivity to gap junctional intercellular communication. We identified an Sp1/Sp3 containing complex that assembles on a minimal element in the -70 to -57 region of the osteocalcin promoter in a gap junction-dependent manner. This CT-rich connexin-response element is necessary and sufficient to confer gap junction sensitivity to the osteocalcin proximal promoter. Repression of osteocalcin transcription occurs as a result of displacement of the stimulatory Sp1 by the inhibitory Sp3 on the promoter when gap junctional communication is perturbed. Modulation of Sp1/Sp3 recruitment also occurs on the collagen Ialpha1 promoter and translates into gap junction-sensitive transcriptional control of collagen Ialpha1 gene expression. Thus, regulation of Sp1/Sp3 recruitment to the promoter may represent a potential general mechanism for transcriptional control of target genes by signals passing through gap junctions.

Mapping the Transmission Functions of Single-Molecule Junctions.

PubMed

Capozzi, Brian; Low, Jonathan Z; Xia, Jianlong; Liu, Zhen-Fei; Neaton, Jeffrey B; Campos, Luis M; Venkataraman, Latha

2016-06-08

Charge transport phenomena in single-molecule junctions are often dominated by tunneling, with a transmission function dictating the probability that electrons or holes tunnel through the junction. Here, we present a new and simple technique for measuring the transmission functions of molecular junctions in the coherent tunneling limit, over an energy range of 1.5 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different exposed areas, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junction Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction's transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed from first principles. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.

Thalamic modulation of cingulate seizure activity via the regulation of gap junctions in mice thalamocingulate slice.

PubMed

Chang, Wei-Pang; Wu, José Jiun-Shian; Shyu, Bai-Chuang

2013-01-01

The thalamus is an important target for deep brain stimulation in the treatment of seizures. However, whether the modulatory effect of thalamic inputs on cortical seizures occurs through the modulation of gap junctions has not been previously studied. Therefore, we tested the effects of different gap junction blockers and couplers in a drug-resistant seizure model and studied the role of gap junctions in the thalamic modulation on cortical seizures. Multielectrode array and calcium imaging were used to record the cortical seizures induced by 4-aminopyridine (250 µM) and bicuculline (5-50 µM) in a novel thalamocingulate slice preparation. Seizure-like activity was significantly attenuated by the pan-gap junction blockers carbenoxolone and octanol and specific neuronal gap junction blocker mefloquine. The gap junction coupler trimethylamine significantly enhanced seizure-like activity. Gap junction blockers did not influence the initial phase of seizure-like activity, but they significantly decreased the amplitude and duration of the maintenance phase. The development of seizures is regulated by extracellular potassium concentration. Carbenoxolone partially restored the amplitude and duration after removing the thalamic inputs. A two-dimensional current source density analysis showed that the sink and source signals shifted to deeper layers after removing the thalamic inputs during the clonic phase. These results indicate that the regulatory mechanism of deep brain stimulation in the thalamus occurs partially though gap junctions.

Spin-valve Josephson junctions for cryogenic memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Bertus, T. J.; Glick, Joseph A.; Loloee, R.; Pratt, W. P.; Birge, Norman O.

2018-01-01

Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be controllably toggled between zero and π by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the superconducting quantum interference device (SQUID) used for phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a "phase diagram" for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.

Thalamic Modulation of Cingulate Seizure Activity Via the Regulation of Gap Junctions in Mice Thalamocingulate Slice

PubMed Central

Chang, Wei-Pang; Wu, José Jiun-Shian; Shyu, Bai-Chuang

2013-01-01

The thalamus is an important target for deep brain stimulation in the treatment of seizures. However, whether the modulatory effect of thalamic inputs on cortical seizures occurs through the modulation of gap junctions has not been previously studied. Therefore, we tested the effects of different gap junction blockers and couplers in a drug-resistant seizure model and studied the role of gap junctions in the thalamic modulation on cortical seizures. Multielectrode array and calcium imaging were used to record the cortical seizures induced by 4-aminopyridine (250 µM) and bicuculline (5–50 µM) in a novel thalamocingulate slice preparation. Seizure-like activity was significantly attenuated by the pan-gap junction blockers carbenoxolone and octanol and specific neuronal gap junction blocker mefloquine. The gap junction coupler trimethylamine significantly enhanced seizure-like activity. Gap junction blockers did not influence the initial phase of seizure-like activity, but they significantly decreased the amplitude and duration of the maintenance phase. The development of seizures is regulated by extracellular potassium concentration. Carbenoxolone partially restored the amplitude and duration after removing the thalamic inputs. A two-dimensional current source density analysis showed that the sink and source signals shifted to deeper layers after removing the thalamic inputs during the clonic phase. These results indicate that the regulatory mechanism of deep brain stimulation in the thalamus occurs partially though gap junctions. PMID:23690968

Robustness effect of gap junctions between Golgi cells on cerebellar cortex oscillations

PubMed Central

2011-01-01

Background Previous one-dimensional network modeling of the cerebellar granular layer has been successfully linked with a range of cerebellar cortex oscillations observed in vivo. However, the recent discovery of gap junctions between Golgi cells (GoCs), which may cause oscillations by themselves, has raised the question of how gap-junction coupling affects GoC and granular-layer oscillations. To investigate this question, we developed a novel two-dimensional computational model of the GoC-granule cell (GC) circuit with and without gap junctions between GoCs. Results Isolated GoCs coupled by gap junctions had a strong tendency to generate spontaneous oscillations without affecting their mean firing frequencies in response to distributed mossy fiber input. Conversely, when GoCs were synaptically connected in the granular layer, gap junctions increased the power of the oscillations, but the oscillations were primarily driven by the synaptic feedback loop between GoCs and GCs, and the gap junctions did not change oscillation frequency or the mean firing rate of either GoCs or GCs. Conclusion Our modeling results suggest that gap junctions between GoCs increase the robustness of cerebellar cortex oscillations that are primarily driven by the feedback loop between GoCs and GCs. The robustness effect of gap junctions on synaptically driven oscillations observed in our model may be a general mechanism, also present in other regions of the brain. PMID:22330240

Smad ubiquitination regulatory factor-2 controls gap junction intercellular communication by modulating endocytosis and degradation of connexin43.

PubMed

Fykerud, Tone Aase; Kjenseth, Ane; Schink, Kay Oliver; Sirnes, Solveig; Bruun, Jarle; Omori, Yasufumi; Brech, Andreas; Rivedal, Edgar; Leithe, Edward

2012-09-01

Gap junctions consist of arrays of intercellular channels that enable adjacent cells to communicate both electrically and metabolically. Gap junction channels are made of a family of integral membrane proteins called connexins, of which the best-studied member is connexin43. Gap junctions are dynamic plasma membrane domains, and connexin43 has a high turnover rate in most tissue types. However, the mechanisms involved in the regulation of connexin43 endocytosis and transport to lysosomes are still poorly understood. Here, we demonstrate by live-cell imaging analysis that treatment of cells with 12-O-tetradecanoylphorbol 13-acetate (TPA) induces endocytosis of subdomains of connexin43 gap junctions. The internalized, connexin43-enriched vesicles were found to fuse with early endosomes, which was followed by transport of connexin43 to the lumen of early endosomes. The HECT E3 ubiquitin ligase smad ubiquitination regulatory factor-2 (Smurf2) was found to be recruited to connexin43 gap junctions in response to TPA treatment. Depletion of Smurf2 by small interfering RNA resulted in enhanced levels of connexin43 gap junctions between adjacent cells and increased gap junction intercellular communication. Smurf2 depletion also counteracted the TPA-induced endocytosis and degradation of connexin43. Collectively, these data identify Smurf2 as a novel regulator of connexin43 gap junctions.

Mixing Hot and Cold Water Streams at a T-Junction

ERIC Educational Resources Information Center

Sharp, David; Zhang, Mingqian; Xu, Zhenghe; Ryan, Jim; Wanke, Sieghard; Afacan, Artin

2008-01-01

A simple mixing of a hot- and cold-water stream at a T-junction was investigated. The main objective was to use mass and energy balance equations to predict mass low rates and the temperature of the mixed stream after the T-junction, and then compare these with the measured values. Furthermore, the thermocouple location after the T-junction and…

A Comment on the Dependence of LED's Efficiency on the Junction Ideality Factor

ERIC Educational Resources Information Center

Sethi, Anubhav; Gupta, Yashika; Arun, P.

2018-01-01

P-n junctions form the basic building blocks for any semiconductor device. Therefore, the complete understanding of the junction characteristics is very important. Although being a widely discussed topic in electronics, there are still some gaps such as finding the value and significance of the junction ideality factor, that needs to be addressed.…

String junction as a baryonic constituent

NASA Astrophysics Data System (ADS)

Kalashnikova, Yu. S.; Nefediev, A. V.

1996-02-01

We extend the model for QCD string with quarks to consider the Mercedes Benz string configuration describing the three-quark baryon. Under the assumption of adiabatic separation of quark and string junction motion we formulate and solve the classical equation of motion for the junction. We dare to quantize the motion of the junction, and discuss the impact of these modes on the baryon spectra.

Quantum shot noise in tunnel junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Mottola, E.; Schoen, G.

1983-01-01

The current and voltage fluctuations in a normal tunnel junction are calculated from microscopic theory. The power spectrum can deviate from the familiar Johnson-Nyquist form when the self-capacitance of the junction is small, at low temperatures permitting experimental verification. The deviation reflects the discrete nature of the charge transfer across the junction and should be present in a wide class of similar systems.

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE PAGES

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.; ...

2017-10-18

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Berberine potentizes apoptosis induced by X-rays irradiation probably through modulation of gap junctions.

PubMed

Liu, Bing; Wang, Qin; Yuan, Dong-dong; Hong, Xiao-ting; Tao, Liang

2011-04-01

Clinical combination of some traditional Chinese medical herbs, including berberine, with irradiation is demonstrated to improve efficacy of tumor radiotherapy, yet the mechanisms for such effect remain largely unknown. The present study investigated the effect of berberine on apoptosis induced by X-rays irradiation and the relation between this effect and gap junction intercellular communication (GJIC). The role of gap junctions in the modulation of X-rays irradiation-induced apoptosis was explored by manipulation of connexin (Cx) expression, and gap junction function, using oleamide, a GJIC inhibitor, and berberine. In transfected HeLa cells, Cx32 expression increased apoptosis induced by X-rays irradiation, while inhibition of gap junction by oleamide reduced the irradiation responses, indicating the dependence of X-rays irradiation-induced apoptosis on GJIC. Berberine, at the concentrations without cytotoxicity, enhanced apoptosis induced by irradiation only in the presence of functional gap junctions. These results suggest that berberine potentizes cell apoptosis induced by X-rays irradiation, probably through enhancement of gap junction activity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venkadesh, S.; Mandal, P.K.; Gautham, N., E-mail: n_gautham@hotmail.com

Highlights: {yields} This is the first crystal structure of a four-way junction with sticky ends. {yields} Four junction structures bind to each other and form a rhombic cavity. {yields} Each rhombus binds to others to form 'infinite' 2D tiles. {yields} This is an example of bottom-up fabrication of a DNA nano-lattice. -- Abstract: We report here the crystal structure of the partially self-complementary decameric sequence d(CGGCGGCCGC), which self assembles to form a four-way junction with sticky ends. Each junction binds to four others through Watson-Crick base pairing at the sticky ends to form a rhombic structure. The rhombuses bind tomore » each other and form two dimensional tiles. The tiles stack to form the crystal. The crystal diffracted in the space group P1 to a resolution of 2.5 A. The junction has the anti-parallel stacked-X conformation like other junction structures, though the formation of the rhombic net noticeably alters the details of the junction geometry.« less

Multi-junction solar cell device

DOEpatents

Friedman, Daniel J.; Geisz, John F.

2007-12-18

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Structure–property relationships in atomic-scale junctions: Histograms and beyond

DOE PAGES

Mark S. Hybertsen; Venkataraman, Latha

2016-03-03

Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less

Structure–property relationships in atomic-scale junctions: Histograms and beyond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mark S. Hybertsen; Venkataraman, Latha

Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less

Holliday Junction Thermodynamics and Structure: Coarse-Grained Simulations and Experiments

NASA Astrophysics Data System (ADS)

Wang, Wujie; Nocka, Laura M.; Wiemann, Brianne Z.; Hinckley, Daniel M.; Mukerji, Ishita; Starr, Francis W.

2016-03-01

Holliday junctions play a central role in genetic recombination, DNA repair and other cellular processes. We combine simulations and experiments to evaluate the ability of the 3SPN.2 model, a coarse-grained representation designed to mimic B-DNA, to predict the properties of DNA Holliday junctions. The model reproduces many experimentally determined aspects of junction structure and stability, including the temperature dependence of melting on salt concentration, the bias between open and stacked conformations, the relative populations of conformers at high salt concentration, and the inter-duplex angle (IDA) between arms. We also obtain a close correspondence between the junction structure evaluated by all-atom and coarse-grained simulations. We predict that, for salt concentrations at physiological and higher levels, the populations of the stacked conformers are independent of salt concentration, and directly observe proposed tetrahedral intermediate sub-states implicated in conformational transitions. Our findings demonstrate that the 3SPN.2 model captures junction properties that are inaccessible to all-atom studies, opening the possibility to simulate complex aspects of junction behavior.

Gap junction plasticity as a mechanism to regulate network-wide oscillations

PubMed Central

Nicola, Wilten; Clopath, Claudia

2018-01-01

Cortical oscillations are thought to be involved in many cognitive functions and processes. Several mechanisms have been proposed to regulate oscillations. One prominent but understudied mechanism is gap junction coupling. Gap junctions are ubiquitous in cortex between GABAergic interneurons. Moreover, recent experiments indicate their strength can be modified in an activity-dependent manner, similar to chemical synapses. We hypothesized that activity-dependent gap junction plasticity acts as a mechanism to regulate oscillations in the cortex. We developed a computational model of gap junction plasticity in a recurrent cortical network based on recent experimental findings. We showed that gap junction plasticity can serve as a homeostatic mechanism for oscillations by maintaining a tight balance between two network states: asynchronous irregular activity and synchronized oscillations. This homeostatic mechanism allows for robust communication between neuronal assemblies through two different mechanisms: transient oscillations and frequency modulation. This implies a direct functional role for gap junction plasticity in information transmission in cortex. PMID:29529034

On the self-association potential of transmembrane tight junction proteins.

PubMed

Blasig, I E; Winkler, L; Lassowski, B; Mueller, S L; Zuleger, N; Krause, E; Krause, G; Gast, K; Kolbe, M; Piontek, J

2006-02-01

Tight junctions seal intercellular clefts via membrane-related strands, hence, maintaining important organ functions. We investigated the self-association of strand-forming transmembrane tight junction proteins. The regulatory tight junction protein occludin was differently tagged and cotransfected in eucaryotic cells. These occludins colocalized within the plasma membrane of the same cell, coprecipitated and exhibited fluorescence resonance energy transfer. Differently tagged strand-forming claudin-5 also colocalized in the plasma membrane of the same cell and showed fluorescence resonance energy transfer. This demonstrates self-association in intact cells both of occludin and claudin-5 in one plasma membrane. In search of dimerizing regions of occludin, dimerization of its cytosolic C-terminal coiledcoil domain was identified. In claudin-5, the second extracellular loop was detected as a dimer. Since the transmembrane junctional adhesion molecule also is known to dimerize, the assumption that homodimerization of transmembrane tight junction proteins may serve as a common structural feature in tight junction assembly is supported.

Entropy Flow Through Near-Critical Quantum Junctions

NASA Astrophysics Data System (ADS)

Friedan, Daniel

2017-05-01

This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

The complex between a four-way DNA junction and T7 endonuclease I

PubMed Central

Déclais, Anne-Cécile; Fogg, Jonathan M.; Freeman, Alasdair D.J.; Coste, Franck; Hadden, Jonathan M.; Phillips, Simon E.V.; Lilley, David M.J.

2003-01-01

The junction-resolving enzyme endonuclease I is selective for the structure of the DNA four-way (Holliday) junction. The enzyme binds to a four-way junction in two possible orientations, with a 4:1 ratio, opening the DNA structure at the centre and changing the global structure into a 90° cross of approximately coaxial helices. The nuclease cleaves the continuous strands of the junction in each orientation. Binding leads to pronounced regions of protection of the DNA against hydroxyl radical attack. Using all this information together with the known structure of the enzyme and the structure of the BglI–DNA complex, we have constructed a model of the complex of endonuclease I and a DNA junction. This shows how the enzyme is selective for the structure of a four-way junction, such that both continuous strands can be accommodated into the two active sites so that a productive resolution event is possible. PMID:12628932

Ballistic Josephson junctions based on CVD graphene

NASA Astrophysics Data System (ADS)

Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

2018-04-01

Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

STIM proteins and the endoplasmic reticulum-plasma membrane junctions.

PubMed

Carrasco, Silvia; Meyer, Tobias

2011-01-01

Eukaryotic organelles can interact with each other through stable junctions where the two membranes are kept in close apposition. The junction that connects the endoplasmic reticulum to the plasma membrane (ER-PM junction) is unique in providing a direct communication link between the ER and the PM. In a recently discovered signaling process, STIM (stromal-interacting molecule) proteins sense a drop in ER Ca(2+) levels and directly activate Orai PM Ca(2+) channels across the junction space. In an inverse process, a voltage-gated PM Ca(2+) channel can directly open ER ryanodine-receptor Ca(2+) channels in striated-muscle cells. Although ER-PM junctions were first described 50 years ago, their broad importance in Ca(2+) signaling, as well as in the regulation of cholesterol and phosphatidylinositol lipid transfer, has only recently been realized. Here, we discuss research from different fields to provide a broad perspective on the structures and unique roles of ER-PM junctions in controlling signaling and metabolic processes.

What happens in Josephson junctions at high critical current densities

NASA Astrophysics Data System (ADS)

Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

2017-07-01

The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

PubMed

Lee, Woochul; Reddy, Pramod

2011-12-02

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

Variability metrics in Josephson Junction fabrication for Quantum Computing circuits

NASA Astrophysics Data System (ADS)

Rosenblatt, Sami; Hertzberg, Jared; Brink, Markus; Chow, Jerry; Gambetta, Jay; Leng, Zhaoqi; Houck, Andrew; Nelson, J. J.; Plourde, Britton; Wu, Xian; Lake, Russell; Shainline, Jeff; Pappas, David; Patel, Umeshkumar; McDermott, Robert

Multi-qubit gates depend on the relative frequencies of the qubits. To reliably build multi-qubit devices therefore requires careful fabrication of Josephson junctions in order to precisely set their critical currents. The Ambegaokar-Baratoff relation between tunnel conductance and critical current implies a correlation between qubit frequency spread and tunnel junction resistance spread. Here we discuss measurement of large numbers of tunnel junctions to assess these resistance spreads, which can exceed 5% of mean resistance. With the goal of minimizing these spreads, we investigate process parameters such as lithographic junction area, evaporation and masking scheme, oxidation conditions, and substrate choice, as well as test environment, design and setup. In addition, trends of junction resistance with temperature are compared with theoretical models for further insights into process and test variability.

Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.

PubMed

Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin

2017-06-01

With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding

NASA Astrophysics Data System (ADS)

Morita, Sho; Liang, Jianbo; Matsubara, Moeko; Dhamrin, Marwan; Nishio, Yoshitaka; Shigekawa, Naoteru

2018-02-01

We fabricate 17-µm-thick Al foil/n-4H-SiC Schottky junctions by surface-activated bonding. Their current-voltage and capacitance-voltage characteristics are compared with those of Schottky junctions fabricated by evaporating Al layers on n-4H-SiC epilayers. We find that the ideality factor of Al foil/SiC junctions is larger than that of conventional junctions, which is due to the irradiation of the fast atom beam (FAB) of Ar. The ideality factor of Al foil/SiC junctions is improved by annealing at 400 °C. We also find that the Schottky barrier height is increased by FAB irradiation, which is likely to be due to the negative charges formed at SiC surfaces.

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

NASA Technical Reports Server (NTRS)

Heinbockel, John H.; Walker, Gilbert H.

1988-01-01

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes

NASA Technical Reports Server (NTRS)

Garcia, Edouard; Jacobson, Brian R.; Hu, Qing

1993-01-01

We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.

Measurement of Single Channel Currents from Cardiac Gap Junctions

NASA Astrophysics Data System (ADS)

Veenstra, Richard D.; Dehaan, Robert L.

1986-08-01

Cardiac gap junctions consist of arrays of integral membrane proteins joined across the intercellular cleft at points of cell-to-cell contact. These junctional proteins are thought to form pores through which ions can diffuse from cytosol to cytosol. By monitoring whole-cell currents in pairs of embryonic heart cells with two independent patch-clamp circuits, the properties of single gap junction channels have been investigated. These channels had a conductance of about 165 picosiemens and underwent spontaneous openings and closings that were independent of voltage. Channel activity and macroscopic junctional conductance were both decreased by the uncoupling agent 1-octanol.

‘Gap Junctions and Cancer: Communicating for 50 Years’

PubMed Central

Aasen, Trond; Mesnil, Marc; Naus, Christian C.; Lampe, Paul D.; Laird, Dale W.

2017-01-01

Fifty years ago, tumour cells were found to lack electrical coupling, leading to the hypothesis that loss of direct intercellular communication is commonly associated with cancer onset and progression. Subsequent studies linked this phenomenon to gap junctions composed of connexin proteins. While many studies support the notion that connexins are tumour suppressors, recent evidence suggests that, in some tumour types, they may facilitate specific stages of tumour progression through both junctional and non-junctional signalling pathways. This Timeline article highlights the milestones connecting gap junctions to cancer, and underscores important unanswered questions, controversies and therapeutic opportunities in the field. PMID:27782134

AmeriFlux US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction

DOE Data Explorer

Randerson, James [University of California, Irvine

2016-01-01

This is the AmeriFlux version of the carbon flux data for the site US-Bn1 Bonanza Creek, 1920 Burn site near Delta Junction. Site Description - The Delta Junction 1920 Control site is located near Delta Junction, just to the north of the Alaska Range in interior Alaska. All three Delta Junction sites are within a 15-km radius of one another. Composed of a combination of alluvial outwashes, floodplains, and low terraces dissected by glacial streams originating in the nearby Alaska Range. In 2001, total aboveground biomass consisted almost entirely of black spruce (Picea mariana).

Statistical evidence of strain induced breaking of metallic point contacts

NASA Astrophysics Data System (ADS)

Alwan, Monzer; Candoni, Nadine; Dumas, Philippe; Klein, Hubert R.

2013-06-01

A scanning tunneling microscopy in break junction regime and a mechanically controllable break junction are used to acquire thousands of conductance-elongation curves by stretching until breaking and re-connecting Au junctions. From a robust statistical analysis performed on large sets of experiments, parameters such as lifetime, elongation and occurrence probabilities are extracted. The analysis of results obtained for different stretching speeds of the electrodes indicates that the breaking mechanism of di- and mono-atomic junction is identical, and that the junctions undergo atomic rearrangement during their stretching and at the moment of breaking.

Simulation and measurement of a Ka-band HTS MMIC Josephson junction mixer

NASA Astrophysics Data System (ADS)

Zhang, Ting; Pegrum, Colin; Du, Jia; Guo, Yingjie Jay

2017-01-01

We report modeling and simulation results for a Ka band high-temperature superconducting (HTS) monolithic microwave integrated circuit (MMIC) Josephson junction mixer. A Verilog-A model of a Josephson junction is established and imported into the system simulator to realize a full HTS MMIC circuit simulation containing the HTS passive circuit models. Impedance matching optimization between the junction and passive devices is investigated. Junction DC I-V characteristics, current and local oscillator bias conditions and mixing performance are simulated and compared with the experimental results. Good agreement is obtained between the simulation and measurement results.

Nature and electronic properties of Y-junctions in CNTs and N-doped CNTs obtained by the pyrolysis of organometallic precursors

NASA Astrophysics Data System (ADS)

Deepak, F. L.; John, Neena Susan; Govindaraj, A.; Kulkarni, G. U.; Rao, C. N. R.

2005-08-01

Carbon nanotubes (CNTs) and N-doped CNTs with Y-junctions have been prepared by the pyrolysis of nickelocene-thiophene and nickel phthalocyanine-thiophene mixtures, respectively, the latter being reported for the first time. The junctions are free from the presence of sulfur and contain only carbon or carbon and nitrogen. The electronic properties of the junction nanotubes have been investigated by scanning tunneling microscopy. Tunneling conductance measurements reveal rectifying behavior with regions of coulomb blockade, the effect being much larger in the N-doped junction nanotubes.

Adenosine receptors regulate gap junction coupling of the human cerebral microvascular endothelial cells hCMEC/D3 by Ca2+ influx through cyclic nucleotide‐gated channels

PubMed Central

Bader, Almke; Bintig, Willem; Begandt, Daniela; Klett, Anne; Siller, Ina G.; Gregor, Carola; Schaarschmidt, Frank; Weksler, Babette; Romero, Ignacio; Couraud, Pierre‐Olivier; Hell, Stefan W.

2017-01-01

Key points Gap junction channels are essential for the formation and regulation of physiological units in tissues by allowing the lateral cell‐to‐cell diffusion of ions, metabolites and second messengers.Stimulation of the adenosine receptor subtype A2B increases the gap junction coupling in the human blood–brain barrier endothelial cell line hCMEC/D3.Although the increased gap junction coupling is cAMP‐dependent, neither the protein kinase A nor the exchange protein directly activated by cAMP were involved in this increase.We found that cAMP activates cyclic nucleotide‐gated (CNG) channels and thereby induces a Ca2+ influx, which leads to the increase in gap junction coupling.The report identifies CNG channels as a possible physiological link between adenosine receptors and the regulation of gap junction channels in endothelial cells of the blood–brain barrier. Abstract The human cerebral microvascular endothelial cell line hCMEC/D3 was used to characterize the physiological link between adenosine receptors and the gap junction coupling in endothelial cells of the blood–brain barrier. Expressed adenosine receptor subtypes and connexin (Cx) isoforms were identified by RT‐PCR. Scrape loading/dye transfer was used to evaluate the impact of the A2A and A2B adenosine receptor subtype agonist 2‐phenylaminoadenosine (2‐PAA) on the gap junction coupling. We found that 2‐PAA stimulated cAMP synthesis and enhanced gap junction coupling in a concentration‐dependent manner. This enhancement was accompanied by an increase in gap junction plaques formed by Cx43. Inhibition of protein kinase A did not affect the 2‐PAA‐related enhancement of gap junction coupling. In contrast, the cyclic nucleotide‐gated (CNG) channel inhibitor l‐cis‐diltiazem, as well as the chelation of intracellular Ca2+ with BAPTA, or the absence of external Ca2+, suppressed the 2‐PAA‐related enhancement of gap junction coupling. Moreover, we observed a 2‐PAA‐dependent activation of CNG channels by a combination of electrophysiology and pharmacology. In conclusion, the stimulation of adenosine receptors in hCMEC/D3 cells induces a Ca2+ influx by opening CNG channels in a cAMP‐dependent manner. Ca2+ in turn induces the formation of new gap junction plaques and a consecutive sustained enhancement of gap junction coupling. The report identifies CNG channels as a physiological link that integrates gap junction coupling into the adenosine receptor‐dependent signalling of endothelial cells of the blood–brain barrier. PMID:28075020

Adenosine receptors regulate gap junction coupling of the human cerebral microvascular endothelial cells hCMEC/D3 by Ca2+ influx through cyclic nucleotide-gated channels.

PubMed

Bader, Almke; Bintig, Willem; Begandt, Daniela; Klett, Anne; Siller, Ina G; Gregor, Carola; Schaarschmidt, Frank; Weksler, Babette; Romero, Ignacio; Couraud, Pierre-Olivier; Hell, Stefan W; Ngezahayo, Anaclet

2017-04-15

Gap junction channels are essential for the formation and regulation of physiological units in tissues by allowing the lateral cell-to-cell diffusion of ions, metabolites and second messengers. Stimulation of the adenosine receptor subtype A 2B increases the gap junction coupling in the human blood-brain barrier endothelial cell line hCMEC/D3. Although the increased gap junction coupling is cAMP-dependent, neither the protein kinase A nor the exchange protein directly activated by cAMP were involved in this increase. We found that cAMP activates cyclic nucleotide-gated (CNG) channels and thereby induces a Ca 2+ influx, which leads to the increase in gap junction coupling. The report identifies CNG channels as a possible physiological link between adenosine receptors and the regulation of gap junction channels in endothelial cells of the blood-brain barrier. The human cerebral microvascular endothelial cell line hCMEC/D3 was used to characterize the physiological link between adenosine receptors and the gap junction coupling in endothelial cells of the blood-brain barrier. Expressed adenosine receptor subtypes and connexin (Cx) isoforms were identified by RT-PCR. Scrape loading/dye transfer was used to evaluate the impact of the A 2A and A 2B adenosine receptor subtype agonist 2-phenylaminoadenosine (2-PAA) on the gap junction coupling. We found that 2-PAA stimulated cAMP synthesis and enhanced gap junction coupling in a concentration-dependent manner. This enhancement was accompanied by an increase in gap junction plaques formed by Cx43. Inhibition of protein kinase A did not affect the 2-PAA-related enhancement of gap junction coupling. In contrast, the cyclic nucleotide-gated (CNG) channel inhibitor l-cis-diltiazem, as well as the chelation of intracellular Ca 2+ with BAPTA, or the absence of external Ca 2+ , suppressed the 2-PAA-related enhancement of gap junction coupling. Moreover, we observed a 2-PAA-dependent activation of CNG channels by a combination of electrophysiology and pharmacology. In conclusion, the stimulation of adenosine receptors in hCMEC/D3 cells induces a Ca 2+ influx by opening CNG channels in a cAMP-dependent manner. Ca 2+ in turn induces the formation of new gap junction plaques and a consecutive sustained enhancement of gap junction coupling. The report identifies CNG channels as a physiological link that integrates gap junction coupling into the adenosine receptor-dependent signalling of endothelial cells of the blood-brain barrier. © 2017 The Authors. The Journal of Physiology © 2017 The Physiological Society.

Possible microplate generation at RRR triple junctions due to the non-circular finite motion of plates relative to each other

NASA Astrophysics Data System (ADS)

Cronin, V. S.

2012-12-01

First generation ideas of the kinematic stability of triple junctions lead to the common belief that the geometry of ridge-ridge-ridge (RRR) triple junctions remains constant over time under conditions of symmetric spreading. Given constant relative motion between each plate pair -- that is, the pole of plate relative motion is fixed to both plates in each pair during finite motion, as assumed in many accounts of plate kinematics -- there would be no boundary mismatch at the triple junction and no apparent kinematic reason why a microplate might develop there. But if, in a given RRR triple junction, the finite motion of one plate as observed from the other plate is not circular (as is generally the case, given the three-plate problem of plate kinematics), the geometry of the ridges and the triple junction will vary with time (Cronin, 1992, Tectonophys 207, 287-301). To explore the possible consequences of non-circular finite motion between plates at an RRR triple junction, a simple model was coded based on the cycloid finite-motion model (e.g., Cronin, 1987, Geology 15, 1006-1009) using NNR-MORVEL56 velocities for individual plates (Argus et al., 2011, G3 12, doi: 10.1029/2011GC003751). Initial assumptions include a spherical Earth, symmetric spreading, and constant angular velocities during the modeled finite time interval. The assumed-constant angular velocity vectors constitute a reference frame for observing finite plate motion. Typical results are [1] that the triple junction migrates relative to a coordinate system fixed to the angular-velocity vectors, [2] ridge axes rotates relative to each other, and [3] a boundary mismatch develops at the synthetic triple junction that might result in microplate nucleation. In a model simulating the Galapagos triple junction between the Cocos, Nazca and Pacific plates whose initial state did not include the Galapagos microplate, the mismatch gap was as much as ~3.4 km during 3 Myr of model displacement (see figure). The centroid of the synthetic triple junction translates ~81 km toward azimuth ~352° in 3 Myr. Of course, the details will vary as different angular velocity vectors are used; however, modeling indicates that non-circular finite relative motion between adjacent plates generally results in boundary mismatches and rotation of ridge segments relative to each other at RRR triple junctions. Left: synthetic Galapagos triple junction at initial model time, without a microplate. Right: synthetic triple junction after 3 Myr displacement, illustrating the resulting boundary mismatch (gap) and rotated ridge axes.

Force and Conductance Spectroscopy of Single Molecule Junctions

NASA Astrophysics Data System (ADS)

Frei, Michael

Investigation of mechanical properties of single molecule junctions is crucial to develop an understanding and enable control of single molecular junctions. This work presents an experimental and analytical approach that enables the statistical evaluation of force and simultaneous conductance data of metallic atomic point contacts and molecular junctions. A conductive atomic force microscope based break junction technique is developed to form single molecular junctions and collect conductance and force data simultaneously. Improvements of the optical components have been achieved through the use of a super-luminescent diode, enabling tremendous increases in force resolution. An experimental procedure to collect data for various molecular junctions has been developed and includes deposition, calibration, and analysis methods. For the statistical analysis of force, novel approaches based on two dimensional histograms and a direct force identification method are presented. The two dimensional method allows for an unbiased evaluation of force events that are identified using corresponding conductance signatures. This is not always possible however, and in these situations, the force based identification of junction rearrangement events is an attractive alternative method. This combined experimental and analytical approach is then applied to three studies: First, the impact of molecular backbones to the mechanical behavior of single molecule junctions is investigated and it is found that junctions formed with identical linkers but different backbone structure result in junctions with varying breaking forces. All molecules used show a clear molecular signature and force data can be evaluated using the 2D method. Second, the effects of the linker group used to attach molecules to gold electrodes are investigated. A study of four alkane molecules with different linkers finds a drastic difference in the evolution of donor-acceptor and covalently bonded molecules respectively. In fact, the covalent bond is found to significantly distort the metal electrode rearrangement such that junction rearrangement events can no longer be identified with a clean and well defined conductance signature. For this case, the force based identification process is used. Third, results for break junction measurements with different metals are presented. It is found that silver and palladium junctions rupture with forces different from those of gold contacts. In the case of silver experiments in ambient conditions, we can also identify oxygen impurities in the silver contact formation process, leading to force and conductance measurements of silver-oxygen structures. For the future, this work provides an experimental and analytical foundation that will enable insights into single molecule systems not previously accessible.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

DTIC Science & Technology

2015-08-27

photodiodes with different cutoff wavelengths connected in series with tunnel diodes between adjacent photodiodes. The LEDs optically bias the inactive...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...during this project, including initial demonstrations of optical addressing, tunnel junction studies and multicolor device characterization

Unconventional Josephson effect in hybrid superconductor-topological insulator devices.

PubMed

Williams, J R; Bestwick, A J; Gallagher, P; Hong, Seung Sae; Cui, Y; Bleich, Andrew S; Analytis, J G; Fisher, I R; Goldhaber-Gordon, D

2012-08-03

We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.

The effector and scaffolding proteins AF6 and MUPP1 interact with connexin36 and localize at gap junctions that form electrical synapses in rodent brain.

PubMed

Li, X; Lynn, B D; Nagy, J I

2012-01-01

Electrical synapses formed by neuronal gap junctions composed of connexin36 (Cx36) occur in most major structures in the mammalian central nervous system. These synapses link ensembles of neurons and influence their network properties. Little is known about the macromolecular constituents of neuronal gap junctions or how transmission through electrical synapses is regulated at the level of channel conductance or gap junction assembly/disassembly. Such knowledge is a prerequisite to understanding the roles of gap junctions in neuronal circuitry. Gap junctions share similarities with tight and adhesion junctions in that all three reside at close plasma membrane appositions, and therefore may associate with similar structural and regulatory proteins. Previously, we reported that the tight junction-associated protein zonula occludens-1 (ZO-1) interacts with Cx36 and is localized at gap junctions. Here, we demonstrate that two proteins known to be associated with tight and adherens junctions, namely AF6 and MUPP1, are components of neuronal gap junctions in rodent brain. By immunofluorescence, AF6 and MUPP1 were co-localized with Cx36 in many brain areas. Co-immunoprecipitation and pull-down approaches revealed an association of Cx36 with AF6 and MUPP1, which required the C-terminus PDZ domain interaction motif of Cx36 for interaction with the single PDZ domain of AF6 and with the 10th PDZ domain of MUPP1. As AF6 is a target of the cAMP/Epac/Rap1 signalling pathway and MUPP1 is a scaffolding protein that interacts with CaMKII, the present results suggest that AF6 may be a target for cAMP/Epac/Rap1 signalling at electrical synapses, and that MUPP1 may contribute to anchoring CaMKII at these synapses. © 2011 The Authors. European Journal of Neuroscience © 2011 Federation of European Neuroscience Societies and Blackwell Publishing Ltd.

Toxicants target cell junctions in the testis: Insights from the indazole-carboxylic acid model

PubMed Central

Cheng, C Yan

2014-01-01

There are numerous types of junctions in the seminiferous epithelium which are integrated with, and critically dependent on the Sertoli cell cytoskeleton. These include the basal tight junctions between Sertoli cells that form the main component of the blood–testis barrier, the basal ectoplasmic specializations (basal ES) and basal tubulobulbar complexes (basal TBC) between Sertoli cells; as well as apical ES and apical TBC between Sertoli cells and the developing spermatids that orchestrate spermiogenesis and spermiation. These junctions, namely TJ, ES, and TBC interact with actin microfilament-based cytoskeleton, which together with the desmosomal junctions that interact with the intermediate filament-based cytoskeleton plus the highly polarized microtubule-based cytoskeleton are working in concert to move spermatocytes and spermatids between the basal and luminal aspect of the seminiferous epithelium. In short, these various junctions are structurally complexed with the actin- and microtubule-based cytoskeleton or intermediate filaments of the Sertoli cell. Studies have shown toxicants (e.g., cadmium, bisphenol A (BPA), perfluorooctanesulfonate (PFOS), phthalates, and glycerol), and some male contraceptives under development (e.g., adjudin, gamendazole), exert their effects, at least in part, by targeting cell junctions in the testis. The disruption of Sertoli–Sertoli cell and Sertoli–germ cell junctions, results in the loss of germ cells from the seminiferous epithelium. Adjudin, a potential male contraceptive under investigation in our laboratory, produces loss of spermatids from the seminiferous tubules through disruption of the Sertoli cell spermatid junctions and disruption of the Sertoli cell cytoskeleton. The molecular and structural changes associated with adjudin administration are described, to provide an example of the profile of changes caused by disturbance of Sertoli-germ cell and also Sertoli cell-cell junctions. PMID:26413399

Understanding the Conductance of Single-Molecule Junctions from First Principles

NASA Astrophysics Data System (ADS)

Quek, Su Ying

2008-03-01

Discovering the anatomy of single-molecule junctions, in order to exploit their transport behavior, poses fundamental challenges to nanoscience. First-principles calculations based on density-functional theory (DFT) can, together with experiment, provide detailed atomic-scale insights into the transport properties, and their relation to junction structure and electronic properties. Here, a DFT scattering state approach [1] is used to explore the single-molecule conductance of two prototypical junctions as a function of junction geometry, in the context of recent experiments. First, the computed conductance of 15 distinct benzene-diamine-Au junctions is compared to a large robust experimental data set [2]. The amine-gold bonding is shown to be highly selective, but flexible, resulting in a conductance that is insensitive to other details of the junction structure. The range of computed conductance corresponds well to the narrow distribution in experiment, although the average calculated conductance is approximately 7 times larger. This discrepancy is attributed to the absence of many-electron corrections in the DFT molecular orbital energies; a simple physically-motivated estimate for the self-energy corrections results in a conductance that is much closer to experiment [3]. Second, similar first-principles techniques are applied to a range of bipyridine-Au junctions. The extent to which Au-pyridine link bonding is affected by the constraints of forming bipyridine-Au junctions is investigated. In some contrast to the amine case, the computed conductance shows a strong sensitivity to the tilt of the bipyridine rings relative to the Au surfaces. Experiments probing the conductance of bipyridine-Au junctions are discussed in the context of these findings. [1] H. J. Choi et al, Phys Rev B, 76, 155420 (2007) [2] L. Venkataraman et al, Nano Lett 6, 458 (2006) [3] S. Y. Quek et al, Nano Lett. 7, 3477 (2007)

Optimal Normal Tissue Sparing in Craniospinal Axis Irradiation Using IMRT With Daily Intrafractionally Modulated Junction(s)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kusters, Johannes M.A.M.; Louwe, Rob J.W.; Kollenburg, Peter G.M. van

2011-12-01

Purpose: To develop a treatment technique for craniospinal irradiation using intensity-modulated radiotherapy (IMRT) with improved dose homogeneity at the field junction(s), increased target volume conformity, and minimized dose to the organs at risk (OARs). Methods and Materials: Five patients with high-risk medulloblastoma underwent CT simulation in supine position. For each patient, an IMRT plan with daily intrafractionally modulated junction(s) was generated, as well as a treatment plan based on conventional three-dimensional planning (3DCRT). A dose of 39.6 Gy in 22 daily fractions of 1.8 Gy was prescribed. Dose-volume parameters for target volumes and OARs were compared for the two techniques.more » Results: The maximum dose with IMRT was <107% in all patients. V{sub <95} and V{sub >107} were <1 cm{sup 3} for IMRT compared with 3-9 cm{sup 3} for the craniospinal and 26-43 cm{sup 3} for the spinal-spinal junction with 3DCRT. These observations corresponded with a lower homogeneity index and a higher conformity index for the spinal planning target volume with IMRT. IMRT provided considerable sparing of acute and late reacting tissues. V{sub 75} for the esophagus, gastroesophageal junction, and intestine was 81%, 81%, and 22% with 3DCRT versus 5%, 0%, and 1% with IMRT, respectively. V{sub 75} for the heart and thyroid was 42% and 32% vs. 0% with IMRT. Conclusion: IMRT with daily intrafractionally modulated junction results in a superior target coverage and junction homogeneity compared with 3DCRT. A significant dose reduction can be obtained for acute as well as late-reacting tissues.« less

Low Level Pro-inflammatory Cytokines Decrease Connexin36 Gap Junction Coupling in Mouse and Human Islets through Nitric Oxide-mediated Protein Kinase Cδ.

PubMed

Farnsworth, Nikki L; Walter, Rachelle L; Hemmati, Alireza; Westacott, Matthew J; Benninger, Richard K P

2016-02-12

Pro-inflammatory cytokines contribute to the decline in islet function during the development of diabetes. Cytokines can disrupt insulin secretion and calcium dynamics; however, the mechanisms underlying this are poorly understood. Connexin36 gap junctions coordinate glucose-induced calcium oscillations and pulsatile insulin secretion across the islet. Loss of gap junction coupling disrupts these dynamics, similar to that observed during the development of diabetes. This study investigates the mechanisms by which pro-inflammatory cytokines mediate gap junction coupling. Specifically, as cytokine-induced NO can activate PKCδ, we aimed to understand the role of PKCδ in modulating cytokine-induced changes in gap junction coupling. Isolated mouse and human islets were treated with varying levels of a cytokine mixture containing TNF-α, IL-1β, and IFN-γ. Islet dysfunction was measured by insulin secretion, calcium dynamics, and gap junction coupling. Modulators of PKCδ and NO were applied to determine their respective roles in modulating gap junction coupling. High levels of cytokines caused cell death and decreased insulin secretion. Low levels of cytokine treatment disrupted calcium dynamics and decreased gap junction coupling, in the absence of disruptions to insulin secretion. Decreases in gap junction coupling were dependent on NO-regulated PKCδ, and altered membrane organization of connexin36. This study defines several mechanisms underlying the disruption to gap junction coupling under conditions associated with the development of diabetes. These mechanisms will allow for greater understanding of islet dysfunction and suggest ways to ameliorate this dysfunction during the development of diabetes. © 2016 by The American Society for Biochemistry and Molecular Biology, Inc.

Heterotypic gap junctions at glutamatergic mixed synapses are abundant in goldfish brain

PubMed Central

Rash, John E.; Kamasawa, Naomi; Vanderpool, Kimberly G.; Yasumura, Thomas; O'Brien, John; Nannapaneni, Srikant; Pereda, Alberto E.; Nagy, James I.

2014-01-01

Gap junctions provide for direct intercellular electrical and metabolic coupling. The abundance of gap junctions at “large myelinated club ending” synapses on Mauthner cells of the teleost brain provided a convenient model to correlate anatomical and physiological properties of electrical synapses. There, presynaptic action potentials were found to evoke short-latency electrical “pre-potentials” immediately preceding their accompanying glutamate-induced depolarizations, making these the first unambiguously identified “mixed” (i.e., chemical plus electrical) synapses in the vertebrate CNS. We recently showed that gap junctions at these synapses exhibit asymmetric electrical resistance (i.e., electrical rectification), which we correlated with total molecular asymmetry of connexin composition in their apposing gap junction hemiplaques, with Cx35 restricted to axon terminal hemiplaques and Cx34.7 restricted to apposing Mauthner cell plasma membranes. We now show that similarly heterotypic neuronal gap junctions are abundant throughout goldfish brain, with labeling exclusively for Cx35 in presynaptic hemiplaques and exclusively for Cx34.7 in postsynaptic hemiplaques. Moreover, the vast majority of these asymmetric gap junctions occur at glutamatergic axon terminals. The widespread distribution of heterotypic gap junctions at glutamatergic mixed synapses throughout goldfish brain and spinal cord implies that pre- vs. postsynaptic asymmetry at electrical synapses evolved early in the chordate lineage. We propose that the advantages of the molecular and functional asymmetry of connexins at electrical synapses that are so prominently expressed in the teleost CNS are unlikely to have been abandoned in higher vertebrates. However, to create asymmetric coupling in mammals, where most gap junctions are composed of Cx36 on both sides, would require some other mechanism, such as differential phosphorylation of connexins on opposite sides of the same gap junction or on asymmetric differences in the complement of their scaffolding and regulatory proteins. PMID:25451276

Two classes of gap junction channels mediate soma-germline interactions essential for germline proliferation and gametogenesis in Caenorhabditis elegans.

PubMed

Starich, Todd A; Hall, David H; Greenstein, David

2014-11-01

In all animals examined, somatic cells of the gonad control multiple biological processes essential for germline development. Gap junction channels, composed of connexins in vertebrates and innexins in invertebrates, permit direct intercellular communication between cells and frequently form between somatic gonadal cells and germ cells. Gap junctions comprise hexameric hemichannels in apposing cells that dock to form channels for the exchange of small molecules. Here we report essential roles for two classes of gap junction channels, composed of five innexin proteins, in supporting the proliferation of germline stem cells and gametogenesis in the nematode Caenorhabditis elegans. Transmission electron microscopy of freeze-fracture replicas and fluorescence microscopy show that gap junctions between somatic cells and germ cells are more extensive than previously appreciated and are found throughout the gonad. One class of gap junctions, composed of INX-8 and INX-9 in the soma and INX-14 and INX-21 in the germ line, is required for the proliferation and differentiation of germline stem cells. Genetic epistasis experiments establish a role for these gap junction channels in germline proliferation independent of the glp-1/Notch pathway. A second class of gap junctions, composed of somatic INX-8 and INX-9 and germline INX-14 and INX-22, is required for the negative regulation of oocyte meiotic maturation. Rescue of gap junction channel formation in the stem cell niche rescues germline proliferation and uncovers a later channel requirement for embryonic viability. This analysis reveals gap junctions as a central organizing feature of many soma-germline interactions in C. elegans. Copyright © 2014 by the Genetics Society of America.

Abundance of gap junctions at glutamatergic mixed synapses in adult Mosquitofish spinal cord neurons

PubMed Central

Serrano-Velez, Jose L.; Rodriguez-Alvarado, Melanie; Torres-Vazquez, Irma I.; Fraser, Scott E.; Yasumura, Thomas; Vanderpool, Kimberly G.; Rash, John E.; Rosa-Molinar, Eduardo

2014-01-01

“Dye-coupling”, whole-mount immunohistochemistry for gap junction channel protein connexin 35 (Cx35), and freeze-fracture replica immunogold labeling (FRIL) reveal an abundance of electrical synapses/gap junctions at glutamatergic mixed synapses in the 14th spinal segment that innervates the adult male gonopodium of Western Mosquitofish, Gambusia affinis (Mosquitofish). To study gap junctions’ role in fast motor behavior, we used a minimally-invasive neural-tract-tracing technique to introduce gap junction-permeant or -impermeant dyes into deep muscles controlling the gonopodium of the adult male Mosquitofish, a teleost fish that rapidly transfers (complete in <20 mS) spermatozeugmata into the female reproductive tract. Dye-coupling in the 14th spinal segment controlling the gonopodium reveals coupling between motor neurons and a commissural primary ascending interneuron (CoPA IN) and shows that the 14th segment has an extensive and elaborate dendritic arbor and more gap junctions than do other segments. Whole-mount immunohistochemistry for Cx35 results confirm dye-coupling and show it occurs via gap junctions. Finally, FRIL shows that gap junctions are at mixed synapses and reveals that >50 of the 62 gap junctions at mixed synapses are in the 14th spinal segment. Our results support and extend studies showing gap junctions at mixed synapses in spinal cord segments involved in control of genital reflexes in rodents, and they suggest a link between mixed synapses and fast motor behavior. The findings provide a basis for studies of specific roles of spinal neurons in the generation/regulation of sex-specific behavior and for studies of gap junctions’ role in regulating fast motor behavior. Finally, the CoPA IN provides a novel candidate neuron for future studies of gap junctions and neural control of fast motor behaviors. PMID:25018700

Distal gap junctions and active dendrites can tune network dynamics.

PubMed

Saraga, Fernanda; Ng, Leo; Skinner, Frances K

2006-03-01

Gap junctions allow direct electrical communication between CNS neurons. From theoretical and modeling studies, it is well known that although gap junctions can act to synchronize network output, they can also give rise to many other dynamic patterns including antiphase and other phase-locked states. The particular network pattern that arises depends on cellular, intrinsic properties that affect firing frequencies as well as the strength and location of the gap junctions. Interneurons or GABAergic neurons in hippocampus are diverse in their cellular characteristics and have been shown to have active dendrites. Furthermore, parvalbumin-positive GABAergic neurons, also known as basket cells, can contact one another via gap junctions on their distal dendrites. Using two-cell network models, we explore how distal electrical connections affect network output. We build multi-compartment models of hippocampal basket cells using NEURON and endow them with varying amounts of active dendrites. Two-cell networks of these model cells as well as reduced versions are explored. The relationship between intrinsic frequency and the level of active dendrites allows us to define three regions based on what sort of network dynamics occur with distal gap junction coupling. Weak coupling theory is used to predict the delineation of these regions as well as examination of phase response curves and distal dendritic polarization levels. We find that a nonmonotonic dependence of network dynamic characteristics (phase lags) on gap junction conductance occurs. This suggests that distal electrical coupling and active dendrite levels can control how sensitive network dynamics are to gap junction modulation. With the extended geometry, gap junctions located at more distal locations must have larger conductances for pure synchrony to occur. Furthermore, based on simulations with heterogeneous networks, it may be that one requires active dendrites if phase-locking is to occur in networks formed with distal gap junctions.

MYONEURAL JUNCTIONS OF TWO ULTRASTRUCTURALLY DISTINCT TYPES IN EARTHWORM BODY WALL MUSCLE

PubMed Central

Rosenbluth, Jack

1972-01-01

The longitudinal muscle of the earthworm body wall is innervated by nerve bundles containing axons of two types which form two corresponding types of myoneural junction with the muscle fibers Type I junctions resemble cholinergic neuromuscular junctions of vertebrate skeletal muscle and are characterized by three features: (a) The nerve terminals contain large numbers of spherical, clear, ∼500 A vesicles plus a small number of larger dense-cored vesicles (b) The junctional gap is relatively wide (∼900 A), and it contains a basement membrane-like material, (c) The postjunctional membrane, although not folded, displays prominent specializations on both its external and internal surfaces The cytoplasmic surface is covered by a dense matrix ∼200 A thick which appears to be the site of insertion of fine obliquely oriented cytoplasmic filaments The external surface exhibits rows of projections ∼200 A long whose bases consist of hexagonally arrayed granules seated in the outer dense layer of the plasma membrane The concentration of these hexagonally disposed elements corresponds to the estimated concentration of both receptor sites and acetylcholinesterase sites at cholinergic junctions elsewhere. Type II junctions resemble the adrenergic junctions in vertebrate smooth muscle and exhibit the following structural characteristics: (a) The nerve fibers contain predominantly dense-cored vesicles ∼1000 A in diameter (b) The junctional gap is relatively narrow (∼150 A) and contains no basement membrane-like material, (c) Postjunctional membrane specialization is minimal. It is proposed that the structural differences between the two types of myoneural junction reflect differences in the respective transmitters and corresponding differences in the mechanisms of transmitter action and/or inactivation. PMID:5044759

Interaction of Ddc1 and RPA with single-stranded/double-stranded DNA junctions in yeast whole cell extracts: Proteolytic degradation of the large subunit of replication protein A in ddc1Δ strains.

PubMed

Sukhanova, Maria V; D'Herin, Claudine; Boiteux, Serge; Lavrik, Olga I

2014-10-01

To characterize proteins that interact with single-stranded/double-stranded (ss/ds) DNA junctions in whole cell free extracts of Saccharomyces cerevisiae, we used [(32)P]-labeled photoreactive partial DNA duplexes containing a 3'-ss/ds-junction (3'-junction) or a 5'-ss/ds-junction (5'-junction). Identification of labeled proteins was achieved by MALDI-TOF mass spectrometry peptide mass fingerprinting and genetic analysis. In wild-type extract, one of the components of the Ddc1-Rad17-Mec3 complex, Ddc1, was found to be preferentially photocrosslinked at a 3'-junction. On the other hand, RPAp70, the large subunit of the replication protein A (RPA), was the predominant crosslinking product at a 5'-junction. Interestingly, ddc1Δ extracts did not display photocrosslinking of RPAp70 at a 5'-junction. The results show that RPAp70 crosslinked to DNA with a 5'-junction is subject to limited proteolysis in ddc1Δ extracts, whereas it is stable in WT, rad17Δ, mec3Δ and mec1Δ extracts. The degradation of the RPAp70-DNA adduct in ddc1Δ extract is strongly reduced in the presence of the proteasome inhibitor MG 132. We also addressed the question of the stability of free RPA, using anti-RPA antibodies. The results show that RPAp70 is also subject to proteolysis without photocrosslinking to DNA upon incubation in ddc1Δ extract. The data point to a novel property of Ddc1, modulating the turnover of DNA binding proteins such as RPAp70 by the proteasome. Copyright © 2014 Elsevier B.V. All rights reserved.

46 CFR 111.81-1 - Outlet boxes and junction boxes; general.

Code of Federal Regulations, 2010 CFR

2010-10-01

... fixture, wiring device, or similar item, including each separately installed connection and junction box... used. (d) As appropriate, each outlet-box or junction-box installation must meet the following...

Interplay of Bias-Driven Charging and the Vibrational Stark Effect in Molecular Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yajing; Zolotavin, Pavlo; Doak, Peter

We observe large, reversible, bias driven changes in the vibrational energies of PCBM based on simultaneous transport and surface-enhanced Raman spectroscopy (SERS) measurements on PCBM-gold junctions. A combination of linear and quadratic shifts in vibrational energies with voltage is analyzed and compared with similar measurements involving C-60-gold junctions. A theoretical model based on density functional theory (DFT) calculations suggests that both a vibrational Stark effect and bias-induced charging of the junction contribute to the shifts in vibrational energies. In the PCBM case, a linear vibrational Stark effect is observed due to the permanent electric dipole moment of PCBM. The vibrationalmore » Stark shifts shown here for PCBM junctions are comparable to or larger than the charging effects that dominate in C-60 junctions.« less

Fixed-Gap Tunnel Junction for Reading DNA Nucleotides

PubMed Central

2015-01-01

Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events. PMID:25380505

Interplay of Bias-Driven Charging and the Vibrational Stark Effect in Molecular Junctions

DOE PAGES

Li, Yajing; Zolotavin, Pavlo; Doak, Peter; ...

2016-01-27

We observe large, reversible, bias driven changes in the vibrational energies of PCBM based on simultaneous transport and surface-enhanced Raman spectroscopy (SERS) measurements on PCBM-gold junctions. A combination of linear and quadratic shifts in vibrational energies with voltage is analyzed and compared with similar measurements involving C-60-gold junctions. A theoretical model based on density functional theory (DFT) calculations suggests that both a vibrational Stark effect and bias-induced charging of the junction contribute to the shifts in vibrational energies. In the PCBM case, a linear vibrational Stark effect is observed due to the permanent electric dipole moment of PCBM. The vibrationalmore » Stark shifts shown here for PCBM junctions are comparable to or larger than the charging effects that dominate in C-60 junctions.« less

Regulation of neuronal axon specification by glia-neuron gap junctions in C. elegans.

PubMed

Meng, Lingfeng; Zhang, Albert; Jin, Yishi; Yan, Dong

2016-10-21

Axon specification is a critical step in neuronal development, and the function of glial cells in this process is not fully understood. Here, we show that C. elegans GLR glial cells regulate axon specification of their nearby GABAergic RME neurons through GLR-RME gap junctions. Disruption of GLR-RME gap junctions causes misaccumulation of axonal markers in non-axonal neurites of RME neurons and converts microtubules in those neurites to form an axon-like assembly. We further uncover that GLR-RME gap junctions regulate RME axon specification through activation of the CDK-5 pathway in a calcium-dependent manner, involving a calpain clp-4 . Therefore, our study reveals the function of glia-neuron gap junctions in neuronal axon specification and shows that calcium originated from glial cells can regulate neuronal intracellular pathways through gap junctions.

GdN nanoisland-based GaN tunnel junctions.

PubMed

Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

2013-06-12

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

Arp2/3 promotes junction formation and maintenance in the Caenorhabditis elegans intestine by regulating membrane association of apical proteins

PubMed Central

Bernadskaya, Yelena Y.; Patel, Falshruti B.; Hsu, Hsiao-Ting; Soto, Martha C.

2011-01-01

It has been proposed that Arp2/3, which promotes nucleation of branched actin, is needed for epithelial junction initiation but is less important as junctions mature. We focus here on how Arp2/3 contributes to the Caenorhabditis elegans intestinal epithelium and find important roles for Arp2/3 in the maturation and maintenance of junctions in embryos and adults. Electron microscope studies show that embryos depleted of Arp2/3 form apical actin-rich microvilli and electron-dense apical junctions. However, whereas apical/basal polarity initiates, apical maturation is defective, including decreased apical F-actin enrichment, aberrant lumen morphology, and reduced accumulation of some apical junctional proteins, including DLG-1. Depletion of Arp2/3 in adult animals leads to similar intestinal defects. The DLG-1/AJM-1 apical junction proteins, and the ezrin–radixin–moesin homologue ERM-1, a protein that connects F-actin to membranes, are required along with Arp2/3 for apical F-actin enrichment in embryos, whereas cadherin junction proteins are not. Arp2/3 affects the subcellular distribution of DLG-1 and ERM-1. Loss of Arp2/3 shifts both ERM-1 and DLG-1 from pellet fractions to supernatant fractions, suggesting a role for Arp2/3 in the distribution of membrane-associated proteins. Thus, Arp2/3 is required as junctions mature to maintain apical proteins associated with the correct membranes. PMID:21697505

Role of gap junction intercellular communication in testicular leydig cell apoptosis induced by oxaliplatin via the mitochondrial pathway.

PubMed

Tong, Xuhui; Han, Xi; Yu, Binbin; Yu, Meiling; Jiang, Guojun; Ji, Jie; Dong, Shuying

2015-01-01

Platinum agents are widely used in the chemotherapy of testicular cancer. However, adverse reactions and resistance to such agents have limited their application in antineoplastic treatment. The aim of the present study was to determine the role of gap junction intercellular communication (GJIC) composed of Cx43 on oxaliplatin‑induced survival/apoptosis in mouse leydig normal and cancer cells using MTT, Annexin V/PI double staining assays and western blot analysis. The results showed that GJIC exerted opposite effects on the mouse leydig cancer (I-10) and normal (TM3) cell apoptosis induced by oxaliplatin. In leydig cancer cells, survival of cells exposed to oxaliplatin was substantially reduced when gap junctions formed as compared to no gap junctions. Pharmacological inhibition of gap junctions by oleamide and 18-α-glycyrrhetinic acid resulted in enhanced survival/decreased apoptosis while enhancement of gap junctions by retinoic acid led to decreased survival/increased apoptosis. These effects occurred only in high‑density cultures (gap junction formed), while the pharmacological modulations had no effects when there was no opportunity for gap junction formation. Notably, GJIC played an opposite (protective) role in normal leydig cells survival/apoptosis following exposure to oxaliplatin. Furthermore, this converse oxaliplatin‑inducing apoptosis exerted through the functional gap junction was correlated with the mitochondrial pathway‑related protein Bcl-2/Bax and caspase‑3/9. These results suggested that in testicular leydig normal/cancer cells, GJIC plays an opposite role in oxaliplatin‑induced apoptosis via the mitochondrial pathway.

Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-06-01

We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. Wemore » found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.« less