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Sample records for junction solar cell

  1. Three-junction solar cell

    DOEpatents

    Ludowise, Michael J.

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  2. Improved Solar-Cell Tunnel Junction

    NASA Technical Reports Server (NTRS)

    Daud, T.; Kachare, A.

    1986-01-01

    Efficiency of multiple-junction silicon solar cells increased by inclusion of p+/n+ tunnel junctions of highly doped GaP between component cells. Relatively low recombination velocity at GaP junction principal reason for recommending this material. Relatively wide band gap also helps increase efficiency by reducing optical losses.

  3. Solar Cells With Multiple Small Junctions

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1985-01-01

    Concept for improving efficiency of photovoltaic solar cells based on decreasing p/n junction area in relation to total surface area of cell. Because of reduced junction area, surface leakage drops and saturation current density decreases. Surface passivation helps to ensure short-circuit current remains at high value and response of cells to blue light increases.

  4. Multi-junction solar cell device

    DOEpatents

    Friedman, Daniel J.; Geisz, John F.

    2007-12-18

    A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

  5. Plasmon Enhanced Hetero-Junction Solar Cell

    NASA Astrophysics Data System (ADS)

    Long, Gen; Ching, Levine; Sadoqi, Mostafa; Xu, Huizhong

    2015-03-01

    Here we report a systematic study of plasmon-enhanced hetero-junction solar cells made of colloidal quantum dots (PbS) and nanowires (ZnO), with/without metal nanoparticles (Au). The structure of solar cell devices was characterized by AFM, SEM and profilometer, etc. The power conversion efficiencies of solar cell devices were characterized by solar simulator (OAI TriSOL, AM1.5G Class AAA). The enhancement in the photocurrent due to introduction of metal nanoparticles was obvious. We believe this is due to the plasmonic effect from the metal nanoparticles. The correlation between surface roughness, film uniformity and device performance was also studied.

  6. Electron irradiation of tandem junction solar cells

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.; Miyahira, T. F.; Scott-Monck, J. A.

    1979-01-01

    The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.

  7. Tandem junction amorphous silicon solar cells

    DOEpatents

    Hanak, Joseph J.

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  8. The multiple junction edge illuminated solar cell

    NASA Technical Reports Server (NTRS)

    Sater, B. I.; Brandhorst, H. W., Jr.; Riley, T. J.; Hart, R. E., Jr.

    1973-01-01

    The multiple junction edge illuminated solar cell was devised for high voltage low current applications. Devices to be flight tested in early 1974 with 96 series connected PNN+ junctions in a 2 cm X 2.3 cm size deliver 36 volts at 1 milliampere. Test data of M-J cells fabricated with resistivities of 10, 50, 100, 200, 450, and 1000 ohm cm silicon are presented and problem areas are discussed. An additional potential application of the M-J cell lies in ultilization of its high intensity performance that has been demonstrated at levels in excess of 100 AMO suns.

  9. Studies of silicon PN junction solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1975-01-01

    Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

  10. Solar-Cell-Junction Processing System

    NASA Technical Reports Server (NTRS)

    Bunker, S. N.; Armini, A. J.

    1986-01-01

    System under development reduces equipment costs. Processing system will produce solar-cell junctions on 4 in. (10.2 cm) round silicon wafers at rate of 10 to seventh power per year. System includes non-mass-analyzed ion implanter, microcomputer-controlled, pulsed-electron-beam annealer, and wafertransport system with vacuum interlock. These features eliminate large, expensive magnet and plates, circuitry, and power source otherwise needed for scanning.

  11. Studies of silicon pn junction solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.

    1977-01-01

    Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

  12. Triple junction polymer solar cells for photoelectrochemical water splitting.

    PubMed

    Esiner, Serkan; van Eersel, Harm; Wienk, Martijn M; Janssen, René A J

    2013-06-01

    A triple junction polymer solar cell in a novel 1 + 2 type configuration provides photoelectrochemical water splitting in its maximum power point at V ≈ 1.70 V with an estimated solar to hydrogen energy conversion efficiency of 3.1%. The triple junction cell consists of a wide bandgap front cell and two identical small bandgap middle and back cells.

  13. Vertical-junction solar cells. Final report

    SciTech Connect

    Not Available

    1985-12-20

    The goal of this program was to develop and evaluate an acceptable coversliding technology for vertical-junction solar cells. The technical program was divided into the following sub-tasks: 1.0. to fabricate 80 vertical junction cells of most recent configuration for evaluation as individual samples and for test-module assembly. 2.1. to develop a satisfactory method for coversliding V.J. cells to withstand deep thermal cycle in space. 2.2. to establish welding parameters for V.J. cells and evaluate their weldability. 3.0. Using techniques from 2.1 and 2.2 four modules (4 cell each) to be fabricated and thermal cycled in dry nitrogen (115 c to +125 c 25 cycles) and thermal vacuum tested at 135 c. 4.0. based on results of tasks 2 and 3, two six cell modules to be designed: 1 soldered, 1 welded, and design to be discussed with COTR prior to finalization and 5.0. final design to be fabricated subjected to a thermal vacuum test at +135 c, thermal cycled -115 c to + 125 c, and characterized by I-V measurements and delivered to NRL for testing and evaluation.

  14. Studies of silicon p-n junction solar cells

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  15. Improved High/Low Junction Silicon Solar Cell

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

    1986-01-01

    Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

  16. Limiting process in shallow junction solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, A.; Rittner, E.

    1979-01-01

    In extending the violet and nonreflective cell technology to lower resistivities, several processes limiting output power were encountered. The most important was the dark diffusion current due to recombination at the front grid contacts. After removal of this problem by reduction of the silicon metal contact area (to 0.14 percent of the total area), the electric field enhanced junction recombination current J sub r was the main limitation. Alteration of the diffusion profile to reduce the junction field is shown to be an effective means of influencing J sub r. The remaining problems are the bulk recombination in the n+ layer and the surface recombination at the oxide-silicon interface; both of these problems are aggravated by band-narrowing resulting from heavy doping in the diffused layer. Experimental evidence for the main limitations is shown, where increased diffusion temperature is seen to reduce both the influence of the front grid contacts and the junction electric field by increasing the junction depth. The potential for further significant improvement in efficiency appears to be high.

  17. Development and fabrication of a solar cell junction processing system

    NASA Technical Reports Server (NTRS)

    1984-01-01

    A processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing was developed and constructed. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10(7) wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.

  18. Tunnel junctions for InP-on-Si solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, C.; Vernon, S.; Haven, V.

    1991-01-01

    Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

  19. 40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

    SciTech Connect

    Geisz, J. F.; Friedman, D. J.; Ward, J. S.; Duda, A.; Olavarria, W. J.; Moriarty, T. E.; Kiehl, J. T.; Romero, M. J.; Norman, A. G.; Jones, K. M.

    2008-01-01

    A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga{sub .51}In{sub .49}P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In{sub .04}Ga{sub .96}As middle junction, and a metamorphic 0.89 eV In{sub .37}Ga{sub .63}As bottom junction. The two metamorphic junctions contained approximately 1 x 10{sup 5} cm{sup -2} and 2-3 x 10{sup 6} cm{sup -2} threading dislocations, respectively.

  20. Efficient tandem and triple-junction polymer solar cells.

    PubMed

    Li, Weiwei; Furlan, Alice; Hendriks, Koen H; Wienk, Martijn M; Janssen, René A J

    2013-04-17

    We demonstrate tandem and triple-junction polymer solar cells with power conversion efficiencies of 8.9% and 9.6% that use a newly designed, high molecular weight, small band gap semiconducting polymer and a matching wide band gap polymer.

  1. Efficient tandem and triple-junction polymer solar cells.

    PubMed

    Li, Weiwei; Furlan, Alice; Hendriks, Koen H; Wienk, Martijn M; Janssen, René A J

    2013-04-17

    We demonstrate tandem and triple-junction polymer solar cells with power conversion efficiencies of 8.9% and 9.6% that use a newly designed, high molecular weight, small band gap semiconducting polymer and a matching wide band gap polymer. PMID:23544881

  2. Development and fabrication of a solar cell junction processing system

    NASA Technical Reports Server (NTRS)

    Bunker, S.

    1981-01-01

    A solar cell junction processing system was developed and fabricated. A pulsed electron beam for the four inch wafers is being assembled and tested, wafers were successfully pulsed, and solar cells fabricated. Assembly of the transport locks is completed. The transport was operated successfully but not with sufficient reproducibility. An experiment test facility to examine potential scaleup problems associated with the proposed ion implanter design was constructed and operated. Cells were implanted and found to have efficiency identical to the normal Spire implant process.

  3. Research on gallium arsenide diffused junction solar cells

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandi, S. K.

    1984-01-01

    The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.

  4. Low-high junction theory applied to solar cells

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

    1973-01-01

    Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

  5. Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

    NASA Astrophysics Data System (ADS)

    Johnson, Forrest

    Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

  6. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  7. Low-high junction theory applied to solar cells

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

    1974-01-01

    Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

  8. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  9. Mesoporous junctions and nanocrystalline solar cells

    NASA Astrophysics Data System (ADS)

    Graetzel, Michael

    2000-03-01

    Learning from the concepts used by green plants, we have developed a molecular photovoltaic system based on the sensitization of nanocrystalline TiO2 films. In analogy to photosyntesis, light is absorbed by a monolayer of dye attached to the surface of a wide-band-gap oxide. The mesoporous morphology of the layer provides a substrate characterized by a very large surface area. The roughness factor of a 10-micron thick film reaches easily 1000. Light penetrating the dye loaded TiO2 nanocrystals is therefore collected in an efficient manner, similar to the thylakoid vesicles in green leafs which are stacked in order to enhance solar light harvesting. The excited dye injects an electron in the conduction band of the oxide resulting in efficient and very rapid charge separation. Nearly quantitative conversion of photons in electric current have been achieved with these devices over the whole visible and near-IR range of the spectrum. The overall AM 1.5 solar-to electric power conversion efficiency has reached already 11unravel the dynamics of interfacial charge transfer reactions at these dye- sensitized heterojunctions.

  10. Development of thin wraparound junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Ho, F.; Iles, P. A.

    1981-01-01

    The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

  11. Preliminary Low Temperature Electron Irradiation of Triple Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

    2007-01-01

    For many years extending solar power missions far from the sun has been a challenge not only due to the rapid falloff in solar intensity (intensity varies as inverse square of solar distance) but also because some of the solar cells in an array may exhibit a LILT (low intensity low temperature) degradation that reduces array performance. Recent LILT tests performed on commercial triple junction solar cells have shown that high performance can be obtained at solar distances as great as approx. 5 AU1. As a result, their use for missions going far from the sun has become very attractive. One additional question that remains is whether the radiation damage experienced by solar cells under low temperature conditions will be more severe than when measured during room temperature radiation tests where thermal annealing may take place. This is especially pertinent to missions such as the New Frontiers mission Juno, which will experience cell irradiation from the trapped electron environment at Jupiter. Recent testing2 has shown that low temperature proton irradiation (10 MeV) produces cell degradation results similar to room temperature irradiations and that thermal annealing does not play a factor. Although it is suggestive to propose the same would be observed for low temperature electron irradiations, this has not been verified. JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature. A fluence of 1E15 1MeV electrons was

  12. Sinterless contacts to shallow junction InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.

    1992-01-01

    In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering.

  13. Simulation of the Mars Surface Solar Spectra for Optimized Performance of Triple-Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, RIchard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

    2007-01-01

    The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five. This provides confidence in future longer-term solar powered missions on the surface of Mars. However, the solar cells used on the rovers are not optimized for the Mars surface solar spectrum, which is attenuated at shorter wavelengths due to scattering by the dusty atmosphere. The difference between the Mars surface spectrum and the AM0 spectrum increases with solar zenith angle and optical depth. The recent results of a program between JPL and Spectrolab to optimize GaInP/GaAs/Ge solar cells for Mars are presented. Initial characterization focuses on the solar spectrum at 60-degrees zenith angle at an optical depth of 0.5. The 60-degree spectrum is reduced to 1/6 of the AM0 intensity and is further reduced in the blue portion of the spectrum. JPL has modeled the Mars surface solar spectra, modified an X-25 solar simulator, and completed testing of Mars-optimized solar cells previously developed by Spectrolab with the modified X-25 solar simulator. Spectrolab has focused on the optimization of the higher efficiency Ultra Triple-Junction (UTJ) solar cell for Mars. The attenuated blue portion of the spectrum requires the modification of the top sub-cell in the GaInP/GaAs/Ge solar cell for improved current balancing in the triple-junction cell. Initial characterization confirms the predicted increase in power and current matched operation for the Mars surface 60-degree zenith angle solar spectrum.

  14. High efficiency triple-junction amorphous solar cells

    NASA Astrophysics Data System (ADS)

    Ishihara, T.; Terazono, S.; Sasaki, H.; Kawabata, K.; Itagaki, T.

    A fabrication technique for high-efficiency triple-junction a-SiGe:H and a-Si:H pin solar cells is described. The interfacial characteristics of the a-SiGe:H pin cell, which is used for the bottom cell, have been improved by inserting graded bandgap layers at both p/i and n/i interfaces. The photoconductivity of the a-SiGe:H film, prepared by diluting the silane and germane discharge with a large amount of H2 gas, has also been improved. For the a-Si:H pin cell, Vocs as high as 0.99 V have been achieved by optimizing deposition conditions for the microc-Si:H p-layer and a-Si:H i-layer. Thickness of each layer in the triple-junction cell has been adjusted to get maximum output current. A cell with conversion efficiency of 10.6 percent has been obtained for a cell size of 100 sq cm.

  15. Mechanically Stacked Four-Junction Concentrator Solar Cells

    SciTech Connect

    Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; Garcia, Ivan; Friedman, Daniel J.; King, Richard R.; Chiu, Philip T.; France, Ryan M.; Duda, Anna; Olavarria, Waldo J.; Young, Michelle; Kurtz, Sarah R.

    2015-06-14

    Multijunction solar cells can be fabricated by bonding together component cells that are grown separately. Because the component cells are each grown lattice-matched to suitable substrates, this technique allows alloys of different lattice constants to be combined without the structural defects introduced when using metamorphic buffers. Here we present results on the fabrication and performance of four-junction mechanical stacks composed of GaInP/GaAs and GaInAsP/GaInAs tandems, grown on GaAs and InP substrates, respectively. The two tandems were bonded together with a low-index, transparent epoxy that acts as an omni-directional reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the sub-bandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and thus higher subcell voltage, compared with GaAs subcells without enhanced internal optics; all four subcells exhibit excellent material quality. The device was fabricated with four contact terminals so that each tandem can be operated at its maximum power point, which raises the cumulative efficiency and decreases spectral sensitivity. Efficiencies exceeding 38% at one-sun have been demonstrated. Eliminating the series resistance is the key challenge for the concentrator cells. We will discuss the performance of one-sun and concentrator versions of the device, and compare the results to recently fabricated monolithic four-junction cells.

  16. Studies of silicon p-n junction solar cells. [open circuit photovoltage

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1976-01-01

    Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

  17. Induced junction solar cell and method of fabrication

    NASA Technical Reports Server (NTRS)

    Maserjian, J.; Chern, S. S.; Li, S. P. (Inventor)

    1978-01-01

    An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

  18. Simulation of the Mars surface solar spectra for optimized performance of triple junction solar cells

    NASA Technical Reports Server (NTRS)

    Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, Richard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

    2005-01-01

    The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five.

  19. Theoretical performance of multi-junction solar cells combining III-V and Si materials.

    PubMed

    Mathews, Ian; O'Mahony, Donagh; Corbett, Brian; Morrison, Alan P

    2012-09-10

    A route to improving the overall efficiency of multi-junction solar cells employing conventional III-V and Si photovoltaic junctions is presented here. A simulation model was developed to consider the performance of several multi-junction solar cell structures in various multi-terminal configurations. For series connected, 2-terminal triple-junction solar cells, incorporating an AlGaAs top junction, a GaAs middle junction and either a Si or InGaAs bottom junction, it was found that the configuration with a Si bottom junction yielded a marginally higher one sun efficiency of 41.5% versus 41.3% for an InGaAs bottom junction. A significant efficiency gain of 1.8% over the two-terminal device can be achieved by providing an additional terminal to the Si bottom junction in a 3-junction mechanically stacked configuration. It is shown that the optimum performance can be achieved by employing a four-junction series-connected mechanically stacked device incorporating a Si subcell between top AlGaAs/GaAs and bottom In0.53Ga0.47As cells.

  20. Comparative performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.; Parat, K. K.

    1987-01-01

    A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

  1. Improvement of conversion efficiency for multi-junction solar cells by incorporation of Au nanoclusters.

    PubMed

    Yang, M D; Liu, Y K; Shen, J L; Wu, C H; Lin, C A; Chang, W H; Wang, H H; Yeh, H I; Chan, W H; Parak, W J

    2008-09-29

    We studied the photoluminescence (PL) and photovoltaic current-voltage characteristics of the three-junction InGaP/InGaAs/Ge solar cells by depositing Au nanoclusters on the cell surface. The increases of the PL intensity and short-circuit current after incorporation of Au nanoclusters are evident. An increase of 15.3% in energy conversion efficiency (from 19.6 to 22.6%) is obtained for the three-junction solar cells in which Au nanoclusters have been incorporated. We suggest that the increased light trapping due to radiative scattering from Au nanoclusters is responsible for improving the performance of the three-junction solar cells.

  2. Investigation of multi-junction solar cells using electrostatic force microscopy methods.

    PubMed

    Moczała, M; Sosa, N; Topol, A; Gotszalk, T

    2014-06-01

    Multi-junction III-V solar cells are designed to have a much broader absorption of the solar spectrum than Si-based or single junctions, thus yield the highest conversion. The conversion efficiency can be further scaled with sun concentration. The ability of high conversion efficiencies makes multi-junction prime candidates for fine-tuning explorations aimed at getting closer to the theoretical efficiencies. In this paper, we report on electrostatic force microscopy (EFM) measurements of the built-in potential of multi-junction III-V semiconductor-based solar cells. Kelvin probe force microscopy (KPFM) was employed to qualitatively study the width and electrical properties of individual junctions, i.e., built-in potential, activity, and thickness of the p-n junctions. In addition, the voltage drops across individual solar cell p-n junctions were measured using Kelvin probe microscopy under various operation conditions: dark; illuminated; short-circuit; and biased. We present a method which enables the measurement of a working structure, while focusing on the electrical characteristics of an individual junction by virtue of selecting the spectral range of the illumination used. We show that these pragmatic studies can provide a feedback to improve photovoltaic device design, particularly of operation under a current mismatched situation. This new analysis technique offers additional insights into behavior of the multi-junction solar cell and shows promise for further progress in this field.

  3. Recent Progress and Spectral Robustness Study for Mechanically Stacked Multi-junction Solar Cells

    NASA Astrophysics Data System (ADS)

    Zhao, Lu; Flamand, Giovanni; Poortmans, Jef

    2010-10-01

    Multi-terminal mechanically stacked multi-junction solar cells are an attractive candidate for terrestrial concentrator photovoltaics applications. Unlike monolithically integrated multi-junction solar cells which require current matching, all the available photon currents can be fully extracted from each junction of a mechanically stacked solar cell. Therefore, it has a high performance potential, and more importantly is less sensitive to spectrum variations. Lower losses due to current mismatch translate into a higher annual energy output for the mechanical stack. This paper presents the baseline processing developed at imec for the mechanical stacking process, and the most recent cell results by means of this technology. A GaAs-Ge dual-junction mechanically stacked multi-junction solar cell is demonstrated, with 24.7% plus 2.52% under AM1.5g, and 27.7% plus 4.42% under 30Suns concentration. In addition, spectral sensitivity is studied for both monolithically stacked and mechanically stacked solar cells, to learn the influence of spectrum variations on multi-junction solar cell performance. SMARTS model is used to predict the spectral irradiances, with solar radiation and meteorological elements from typical meteorological year 3 (TMY3) data set. The generated spectra are then fed into TCAD numerical simulation tool, to simulate the device performance. The simulation results show a reduced spectral sensitivity for mechanically stacked cell, and there is a 6% relative gain in annual energy production for the site studied (Las Vegas), compared with the monolithic stack.

  4. Analysis of a four lamp flash system for calibrating multi-junction solar cells under concentrated light

    SciTech Connect

    Schachtner, Michael Prado, Marcelo Loyo; Reichmuth, S. Kasimir; Siefer, Gerald; Bett, Andreas W.

    2015-09-28

    It has been known for a long time that the precise characterization of multi-junction solar cells demands spectrally tunable solar simulators. The calibration of innovative multi-junction solar cells for CPV applications now requires tunable solar simulators which provide high irradiation levels. This paper describes the commissioning and calibration of a flash-based four-lamp simulator to be used for the measurement of multi-junction solar cells with up to four subcells under concentrated light.

  5. Experimental determination of series resistance of p-n junction diodes and solar cells

    NASA Technical Reports Server (NTRS)

    Chen, P. J.; Pao, S. C.; Neugroschel, A.; Lindholm, F. A.

    1978-01-01

    Various methods for determining the series resistance of p-n junction diodes and solar cells are described and compared. New methods involving the measurement of the ac admittance are shown to have certain advantages over methods proposed earlier.

  6. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOEpatents

    Wanlass, Mark W.

    1994-01-01

    A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

  7. Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell.

    PubMed

    Wang, Y; Zhang, Y; Zhang, D; He, S; Li, X

    2015-12-01

    In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.

  8. Design considerations for the Tandem Junction Solar Cell

    NASA Technical Reports Server (NTRS)

    Matzen, W. T.; Carbajal, B. G.; Hardy, R. W.

    1979-01-01

    Structure and operation of the tandem junction cell (TJC) are described. The impact of using only back contacts is discussed. A model is presented which explains operation of the TJC in terms of transistor action. The model is applied to predict TJC performance as a function of physical parameters.

  9. Recovery of shallow junction GaAs solar cells damaged by electron irradiation

    NASA Technical Reports Server (NTRS)

    Walker, G. H.; Conway, E. J.

    1978-01-01

    Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

  10. An efficient triple-junction polymer solar cell having a power conversion efficiency exceeding 11%.

    PubMed

    Chen, Chun-Chao; Chang, Wei-Hsuan; Yoshimura, Ken; Ohya, Kenichiro; You, Jingbi; Gao, Jing; Hong, Zirou; Yang, Yang

    2014-08-27

    Tandem solar cells have the potential to improve photon conversion efficiencies (PCEs) beyond the limits of single-junction devices. In this study, a triple-junction tandem design is demonstrated by employing three distinct organic donor materials having bandgap energies ranging from 1.4 to 1.9 eV. Through optical modeling, balanced photon absorption rates are achieved and, thereby, the photo-currents are matched among the three subcells. Accordingly, an efficient triple-junction tandem organic solar cell can exhibit a record-high PCE of 11.5%.

  11. An efficient triple-junction polymer solar cell having a power conversion efficiency exceeding 11%.

    PubMed

    Chen, Chun-Chao; Chang, Wei-Hsuan; Yoshimura, Ken; Ohya, Kenichiro; You, Jingbi; Gao, Jing; Hong, Zirou; Yang, Yang

    2014-08-27

    Tandem solar cells have the potential to improve photon conversion efficiencies (PCEs) beyond the limits of single-junction devices. In this study, a triple-junction tandem design is demonstrated by employing three distinct organic donor materials having bandgap energies ranging from 1.4 to 1.9 eV. Through optical modeling, balanced photon absorption rates are achieved and, thereby, the photo-currents are matched among the three subcells. Accordingly, an efficient triple-junction tandem organic solar cell can exhibit a record-high PCE of 11.5%. PMID:25043698

  12. Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy

    NASA Astrophysics Data System (ADS)

    Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

    2015-02-01

    An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

  13. Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

    PubMed

    Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

    2015-01-01

    An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

  14. A device model for the tandem junction solar cell

    NASA Technical Reports Server (NTRS)

    Matzen, W. T.; Chiang, S. Y.; Carbajal, B. G.

    1979-01-01

    A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.

  15. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell

    SciTech Connect

    2016-01-01

    Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

  16. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

    SciTech Connect

    Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J.; García, Iván

    2014-09-26

    Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

  17. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    PubMed Central

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  18. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    NASA Astrophysics Data System (ADS)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  19. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    PubMed

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-20

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  20. Light-splitting photovoltaic system utilizing two dual-junction solar cells

    SciTech Connect

    Xiong, Kanglin; Yang, Hui; Lu, Shulong; Dong, Jianrong; Zhou, Taofei; Wang, Rongxin; Jiang, Desheng

    2010-12-15

    There are many difficulties limiting the further development of monolithic multi-junction solar cells, such as the growth of lattice-mismatched material and the current matching constraint. As an alternative approach, the light-splitting photovoltaic system is investigated intensively in different aspects, including the energy loss mechanism and the choice of energy bandgaps of solar cells. Based on the investigation, a two-dual junction system has been implemented employing lattice-matched GaInP/GaAs and InGaAsP/InGaAs cells grown epitaxially on GaAs and InP substrates, respectively. (author)

  1. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

    1990-01-01

    Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

  2. Investigation of the Carbon Arc Source as an AM0 Solar Simulator for Use in Characterizing Multi-Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Xu, Jianzeng; Woodyward, James R.

    2005-01-01

    The operation of multi-junction solar cells used for production of space power is critically dependent on the spectral irradiance of the illuminating light source. Unlike single-junction cells where the spectral irradiance of the simulator and computational techniques may be used to optimized cell designs, optimization of multi-junction solar cell designs requires a solar simulator with a spectral irradiance that closely matches AM0.

  3. The Environmental Performance at Low Intensity, Low Temperature (LILT) of High Efficiency Triple Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Stella, Paul M.; Mueller, Robert; Davis, Gregory; Distefano, Salvador

    2004-01-01

    A number of JPL missions, either active or in the p l d g stages, require the accurate LILT flew intensity - low temperate) climate of triple-junction solar. Although triple ignition LILT performance was reported as recently as 2002, there has been an evolutionary advance in cell technology by both U.S. space cell manufacturers that, for mission design purposes, effectively obsoletes the earlier data. As a result, JPL initiated a program to develop a database for the LILT performance of the new high performance triple junction solar cells. JPL obtained Emcore Advanced triple Juntion CIC assemblies and Spectrolab Ultra Triple Junction CIC assemblies. These cells were tested at temperature-intensity ranges designed to cover applications between 1 and 5.18 AU solar distances. 1 MeV electron irradiation from 25 E14 to 1 El5 w were performed on the cells to evaluate the combined effect of particulate radiation and LILT conditions. The effect of LILT conditions was observed to incur an increase in the variation of cell performances such that at simulted 5.18 AU conditions the average performance was approximately 30% with the best cells measuring between 32 and 34% efficiency. The 30% average efficiency compares with approximately 25% average efficiency measured on earlier technology triple junction solar cells.

  4. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOEpatents

    Wanlass, M.W.

    1994-12-27

    A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

  5. Preliminary low temperature electron irradiation of triple junction solar cells

    NASA Technical Reports Server (NTRS)

    Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

    2005-01-01

    JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature.

  6. Highly efficient organic multi-junction solar cells with a thiophene based donor material

    SciTech Connect

    Meerheim, Rico Körner, Christian; Leo, Karl

    2014-08-11

    The efficiency of organic solar cells can be increased by serial stacked subcells even upon using the same absorber material. For the multi-junction devices presented here, we use the small molecule donor material DCV5T-Me. The subcell currents were matched by optical transfer matrix simulation, allowing an efficiency increase from 8.3% for a single junction up to 9.7% for a triple junction cell. The external quantum efficiency of the subcells, measured under appropriate light bias illumination, is spectrally shifted due to the microcavity of the complete stack, resulting in a broadband response and an increased cell current. The increase of the power conversion efficiency upon device stacking is even stronger for large area cells due to higher influence of the resistance of the indium tin oxide anode, emphasizing the advantage of multi-junction devices for large-area applications.

  7. Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1995-01-01

    Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell

  8. Solar energy conversion through the interaction of plasmons with tunnel junctions. Part A: Solar cell analysis. Part B: Photoconductor analysis

    NASA Technical Reports Server (NTRS)

    Welsh, P. E.; Schwartz, R. J.

    1988-01-01

    A solar cell utilizing guided optical waves and tunnel junctions was analyzed to determine its feasibility. From this analysis, it appears that the limits imposed upon conventional multiple cell systems also limit this solar cell. Due to this limitation, it appears that the relative simplicity of the conventional multiple cell systems over the solar cell make the conventional multiple cell systems the more promising candidate for improvement. It was discovered that some superlattice structures studied could be incorporated into an infrared photodetector. This photoconductor appears to be promising as a high speed, sensitive (high D sup star sub BLIP) detector in the wavelength range from 15 to over 100 micrometers.

  9. Comparison of Ge, InGaAs p-n junction solar cell

    NASA Astrophysics Data System (ADS)

    Korun, M.; Navruz, T. S.

    2016-04-01

    In this paper, the effect of material parameters on the efficiency of Ge and InGaAs p-n junction solar cells which are most commonly used as the sub-cell of multi-junction solar cells are investigated and the results due to these two cells are compared. The efficiency of Ge (EG =0.67 eV) solar cell which is easy to manufacture and inexpensive in cost, is compared with the efficiency of InGaAs (EG =0.74 eV) solar cell which is coming with drawback of high production difficulties and cost. The theoretical efficiency limit of Ge and InGaAs solar cells with optimum thickness were determined by using detailed balance model under one sun AM1.5 illumination. Since the band gap values of two cells are close to each other, approximate detailed balance efficiency limits of 16% for InGaAs and 14% for Ge are obtained. When drift-diffusion model is used and the thicknesses and doping concentrations are optimized, the maximum efficiency values are calculated as 13% for InGaAs and 9% for Ge solar cell. For each solar cell external quantum efficiency curves due to wavelength are also sketched and compared.

  10. Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells

    NASA Astrophysics Data System (ADS)

    Vismara, R.; Isabella, O.; Zeman, M.

    2016-04-01

    Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%.

  11. The photoelectric characteristics of a few-layer graphene/Si Schottky junction solar cell

    NASA Astrophysics Data System (ADS)

    Ma, Xiying; Gu, Weixia

    2015-10-01

    We present a study of the photovoltaic effects of a graphene/n- Si Schottky junction solar cell. The graphene/Si solar cell was prepared by means of rapid chemical vapor deposition, while the graphene films were grown with a CH4/Ar mixed gas under a constant flow at 950°C and then annealed at 1000°C. It was found that the junction between the graphene film and the n-Si structure played an important role in determining the device performance. An energy conversion efficiency of 2.1% was achieved under an optical illumination of 100 mW. The strong photovoltaic effects of the cell were due to device junction's ability to efficiently generate and separate electron-hole pairs.

  12. Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater

  13. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect

    Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-03

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  14. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    NASA Astrophysics Data System (ADS)

    Liu, X.; Zhang, X. W.; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-01

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  15. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  16. Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint

    SciTech Connect

    Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

    2008-05-01

    We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

  17. Tandem and triple-junction polymer:nanocrystal hybrid solar cells consisting of identical subcells.

    PubMed

    Lu, Haipeng; Bartynski, Andrew N; Greaney, Matthew J; Thompson, Mark E; Brutchey, Richard L

    2014-10-22

    Tandem and triple-junction polymer:nanocrystal hybrid solar cells with identical subcells based on P3HT:CdSe nanocrystal bulk heterojunctions (BHJs) are reported for the first time showing 2-fold and 3-fold increases of open-circuit voltage (VOC), respectively, relative to the single-junction cell. A combination of nanocrystalline ZnO and pH-neutral PEDOT:PSS is used as the interconnecting layer, and the thicknesses of subcells are optimized with the guidance of optical simulations. As a result, the average power conversion efficiency (PCE) exhibits a significant increase from 2.0% (VOC = 0.57 V) in single-junction devices to 2.7% (champion 3.1%, VOC = 1.28 V) in tandem devices and 2.3% (VOC = 1.98 V) in triple-junction devices.

  18. Tandem and triple-junction polymer:nanocrystal hybrid solar cells consisting of identical subcells.

    PubMed

    Lu, Haipeng; Bartynski, Andrew N; Greaney, Matthew J; Thompson, Mark E; Brutchey, Richard L

    2014-10-22

    Tandem and triple-junction polymer:nanocrystal hybrid solar cells with identical subcells based on P3HT:CdSe nanocrystal bulk heterojunctions (BHJs) are reported for the first time showing 2-fold and 3-fold increases of open-circuit voltage (VOC), respectively, relative to the single-junction cell. A combination of nanocrystalline ZnO and pH-neutral PEDOT:PSS is used as the interconnecting layer, and the thicknesses of subcells are optimized with the guidance of optical simulations. As a result, the average power conversion efficiency (PCE) exhibits a significant increase from 2.0% (VOC = 0.57 V) in single-junction devices to 2.7% (champion 3.1%, VOC = 1.28 V) in tandem devices and 2.3% (VOC = 1.98 V) in triple-junction devices. PMID:25233268

  19. Enhancing light absorption within the carrier transport length in quantum junction solar cells.

    PubMed

    Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

    2015-09-10

    Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells. PMID:26368966

  20. Enhancing light absorption within the carrier transport length in quantum junction solar cells.

    PubMed

    Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

    2015-09-10

    Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.

  1. Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

    PubMed Central

    Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-01-01

    World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

  2. Investigations To Characterize Multi-Junction Solar Cells In The Stratosphere Using Low-Cost Balloon And Communication Technologies

    NASA Technical Reports Server (NTRS)

    Bowe, Glenroy A.; Wang, Qianghua; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

    2005-01-01

    The use of current balloon, control and communication technologies to test multi-junction solar sell in the stratosphere to achieve near AMO conditions have been investigated. The design criteria for the technologies are that they be reliable, low cost and readily available. Progress is reported on a program to design, launch, fly and retrieve payloads dedicated to testing multi-junction solar cells.

  3. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    SciTech Connect

    Gaddy, E.M.

    1995-10-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty.

  4. Solar cell efficiency enhancement by junction etching and conductive AR coating processes

    NASA Astrophysics Data System (ADS)

    Mardesich, N.

    Discussions on some injectable processes for enhancing the response of low cost terrestrial solar cells are presented. The procedure consists of (1) reduction of junction depth and removal of diffusion damage and defects by suitable etching processes after application of front contact and (2) reduction of light reflection and an increase in sheet conductivity by sputtering a conductive ITO AR coat on the etch front surface. By combining the two processes of plasma etching and ITO AR coating, a 43% total increase in short circuit current is expected for a cell with initial 3000 A junction depth.

  5. Investigation of modified p-n junctions in crystalline silicon on glass solar cells

    NASA Astrophysics Data System (ADS)

    Lausch, D.; Werner, M.; Naumann, V.; Schneider, J.; Hagendorf, C.

    2011-04-01

    In this paper various methods for studying p-n junctions in thin film solar cells are applied with the aim to localize and investigate defects on a microscopic scale. Different electron and ion beam characterization methods are introduced to determine the p-n junction position using two different examples from crystalline silicon on glass thin film technology. In a first example, planview and cross section electron beam induced current measurements revealed that oxygen rich columnar growth at textured substrates strongly disturbs the p-n junction. In a second example, diffusion from glass substrate is identified by ToF-SIMS to influence the electrical and structural characteristics of the thin Si layer resulting in a modified p-n junction. A model describing the formation of both defect structures is introduced.

  6. Design optimization of thin-film/wafer-based tandem junction solar cells using analytical modeling

    NASA Astrophysics Data System (ADS)

    Davidson, Lauren; Toor, Fatima

    2016-03-01

    Several research groups are developing solar cells of varying designs and materials that are high efficiency as well as cost competitive with the single junction silicon (Si) solar cells commercially produced today. One of these solar cell designs is a tandem junction solar cell comprised of perovskite (CH3NH3PbI3) and silicon (Si). Loper et al.1 was able to create a 13.4% efficient tandem cell using a perovskite top cell and a Si bottom cell, and researchers are confident that the perovskite/Si tandem cell can be optimized in order to reach higher efficiencies without introducing expensive manufacturing processes. However, there are currently no commercially available software capable of modeling a tandem cell that is based on a thin-film based bottom cell and a wafer-based top cell. While PC1D2 and SCAPS3 are able to model tandem cells comprised solely of thin-film absorbers or solely of wafer-based absorbers, they result in convergence errors if a thin-film/wafer-based tandem cell, such as the perovskite/ Si cell, is modeled. The Matlab-based analytical model presented in this work is capable of modeling a thin-film/wafer-based tandem solar cell. The model allows a user to adjust the top and bottom cell parameters, such as reflectivity, material bandgaps, donor and acceptor densities, and material thicknesses, in order to optimize the short circuit current, open circuit voltage, and quantum efficiency of the tandem solar cell. Using the Matlab-based analytical model, we were able optimize a perovskite/Si tandem cell with an efficiency greater than 30%.

  7. An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

    NASA Astrophysics Data System (ADS)

    Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

    2016-07-01

    Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

  8. MIS and PN junction solar cells on thin-film polycrystalline silicon

    SciTech Connect

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  9. Theoretical consideration of III-V nanowire/Si triple-junction solar cells.

    PubMed

    Wen, Long; Li, Xinhua; Zhao, Zhifei; Bu, Shaojiang; Zeng, XueSong; Huang, Jin-hua; Wang, Yuqi

    2012-12-21

    In this paper, we report theoretical consideration and simulation of a proposed III-V nanowire (NW)/Si triple-junction solar cell. The cell consists of two axially connected III-V NW subcells that are grown and electrically integrated on an active Si substrate. The optical properties of the cell are thoroughly analyzed by using the finite-difference time-domain method. It is found that NW subcells with optimized geometry have high absorption throughout their absorption region. Meanwhile, beyond the absorption edge of the top and middle NW subcells, the NWs act as an efficient antireflection coating for the bottom Si subcell due to the formation of an optical cavity within the NW layer. The physics responsible for the enhanced light harvesting process is qualitatively explained through modal analysis. In addition, we have shown that the condition of current matching in a III-V NW/Si multi-junction can be fulfilled by adjusting the diameter of the NWs. In order to study the current-voltage characteristics of the proposed cell, the optical generation profiles under AM1.5G illumination are incorporated into an electrical modeling. Our optoelectrical simulations indicate that, with an excellent current matching between subcells, the performance of the proposed structure is comparable with state-of-the-art multi-junction cells. The results presented here indicate that semiconductor NWs may provide a promising route toward high efficiency multi-junction solar cells.

  10. 1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

    NASA Technical Reports Server (NTRS)

    Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

    1990-01-01

    A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

  11. Fabrication of p(+)-n junction GaAs solar cells by a novel method

    NASA Technical Reports Server (NTRS)

    Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

    1984-01-01

    A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

  12. Morphology, properties, and performance of electrodeposited n-CdSe in liquid junction solar cells

    SciTech Connect

    Tomkiewicz, M.; Ling, I.; Parsons, W.S.

    1982-09-01

    The authors describe the mechanisms for galvanostatic electrodeposition of CdSe in terms of competition between chemical reactions that lead to Se formation and electrochemical reduction of Se as polyselenide, at the interfaces between selenium and selenide. This mechanism leads to a cauliflower morphology for the resulting film. This morphology is ideal for a photoanode in the liquid junction solar cell configuration, and the authors describe the performance of such an electrode. In spite of the unique morphology, solid-state properties of the film can be evaluated and the methodology for these evaluations is presented. The performance of the liquid junction solar cells is limited by the dark current and the dielectric properties of the material. The authors also describe the effects of metal ions such as Zn/sup +2/, Ru/sup +3/, and Ga/sup +3/ on the various electrode properties.

  13. Triple-junction hybrid tandem solar cells with amorphous silicon and polymer-fullerene blends.

    PubMed

    Kim, Taehee; Kim, Hyeok; Park, Jinjoo; Kim, Hyungchae; Yoon, Youngwoon; Kim, Sung-Min; Shin, Chonghoon; Jung, Heesuk; Kim, Inho; Jeong, Doo Seok; Kim, Honggon; Kim, Jin Young; Kim, BongSoo; Ko, Min Jae; Son, Hae Jung; Kim, Changsoon; Yi, Junsin; Han, Seunghee; Lee, Doh-Kwon

    2014-11-21

    Organic-inorganic hybrid tandem solar cells attract a considerable amount of attention due to their potential for realizing high efficiency photovoltaic devices at a low cost. Here, highly efficient triple-junction (TJ) hybrid tandem solar cells consisting of a double-junction (DJ) amorphous silicon (a-Si) cell and an organic photovoltaic (OPV) rear cell were developed. In order to design the TJ device in a logical manner, a simulation was carried out based on optical absorption and internal quantum efficiency. In the TJ architecture, the high-energy photons were utilized in a more efficient way than in the previously reported a-Si/OPV DJ devices, leading to a significant improvement in the overall efficiency by means of a voltage gain. The interface engineering such as tin-doped In2O3 deposition as an interlayer and its UV-ozone treatment resulted in the further improvement in the performance of the TJ solar cells. As a result, a power conversion efficiency of 7.81% was achieved with an open-circuit voltage of 2.35 V. The wavelength-resolved absorption profile provides deeper insight into the detailed optical response of the TJ hybrid solar cells.

  14. Triple-Junction Hybrid Tandem Solar Cells with Amorphous Silicon and Polymer-Fullerene Blends

    PubMed Central

    Kim, Taehee; Kim, Hyeok; Park, Jinjoo; Kim, Hyungchae; Yoon, Youngwoon; Kim, Sung-Min; Shin, Chonghoon; Jung, Heesuk; Kim, Inho; Jeong, Doo Seok; Kim, Honggon; Kim, Jin Young; Kim, BongSoo; Ko, Min Jae; Son, Hae Jung; Kim, Changsoon; Yi, Junsin; Han, Seunghee; Lee, Doh-Kwon

    2014-01-01

    Organic-inorganic hybrid tandem solar cells attract a considerable amount of attention due to their potential for realizing high efficiency photovoltaic devices at a low cost. Here, highly efficient triple-junction (TJ) hybrid tandem solar cells consisting of a double-junction (DJ) amorphous silicon (a-Si) cell and an organic photovoltaic (OPV) rear cell were developed. In order to design the TJ device in a logical manner, a simulation was carried out based on optical absorption and internal quantum efficiency. In the TJ architecture, the high-energy photons were utilized in a more efficient way than in the previously reported a-Si/OPV DJ devices, leading to a significant improvement in the overall efficiency by means of a voltage gain. The interface engineering such as tin-doped In2O3 deposition as an interlayer and its UV-ozone treatment resulted in the further improvement in the performance of the TJ solar cells. As a result, a power conversion efficiency of 7.81% was achieved with an open-circuit voltage of 2.35 V. The wavelength-resolved absorption profile provides deeper insight into the detailed optical response of the TJ hybrid solar cells. PMID:25412648

  15. Triple-junction hybrid tandem solar cells with amorphous silicon and polymer-fullerene blends.

    PubMed

    Kim, Taehee; Kim, Hyeok; Park, Jinjoo; Kim, Hyungchae; Yoon, Youngwoon; Kim, Sung-Min; Shin, Chonghoon; Jung, Heesuk; Kim, Inho; Jeong, Doo Seok; Kim, Honggon; Kim, Jin Young; Kim, BongSoo; Ko, Min Jae; Son, Hae Jung; Kim, Changsoon; Yi, Junsin; Han, Seunghee; Lee, Doh-Kwon

    2014-01-01

    Organic-inorganic hybrid tandem solar cells attract a considerable amount of attention due to their potential for realizing high efficiency photovoltaic devices at a low cost. Here, highly efficient triple-junction (TJ) hybrid tandem solar cells consisting of a double-junction (DJ) amorphous silicon (a-Si) cell and an organic photovoltaic (OPV) rear cell were developed. In order to design the TJ device in a logical manner, a simulation was carried out based on optical absorption and internal quantum efficiency. In the TJ architecture, the high-energy photons were utilized in a more efficient way than in the previously reported a-Si/OPV DJ devices, leading to a significant improvement in the overall efficiency by means of a voltage gain. The interface engineering such as tin-doped In2O3 deposition as an interlayer and its UV-ozone treatment resulted in the further improvement in the performance of the TJ solar cells. As a result, a power conversion efficiency of 7.81% was achieved with an open-circuit voltage of 2.35 V. The wavelength-resolved absorption profile provides deeper insight into the detailed optical response of the TJ hybrid solar cells. PMID:25412648

  16. Single-junction polymer solar cells exceeding 10% power conversion efficiency.

    PubMed

    Chen, Jing-De; Cui, Chaohua; Li, Yan-Qing; Zhou, Lei; Ou, Qing-Dong; Li, Chi; Li, Yongfang; Tang, Jian-Xin

    2015-02-01

    A single-junction polymer solar cell with an efficiency of 10.1% is demonstrated by using deterministic aperiodic nanostructures for broadband light harvesting with optimum charge extraction. The performance enhancement is ascribed to the self-enhanced absorption due to collective effects, including pattern-induced anti-reflection and light scattering, as well as surface plasmonic resonance, together with a minimized recombination probability.

  17. An optimized efficient dual junction InGaN/CIGS solar cell: A numerical simulation

    NASA Astrophysics Data System (ADS)

    Farhadi, Bita; Naseri, Mosayeb

    2016-08-01

    The photovoltaic performance of an efficient double junction InGaN/CIGS solar cell including a CdS antireflector top cover layer is studied using Silvaco ATLAS software. In this study, to gain a desired structure, the different design parameters, including the CIGS various band gaps, the doping concentration and the thickness of CdS layer are optimized. The simulation indicates that under current matching condition, an optimum efficiency of 40.42% is achieved.

  18. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures

    NASA Astrophysics Data System (ADS)

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-07-01

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells.We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the

  19. Power generation of series and series/parallel triple junction tandem solar cells derived from measured spectra in Japan

    NASA Astrophysics Data System (ADS)

    Naito, Shunya; Okada, Yoshitaka

    2013-09-01

    A limiting efficiency of a solar cell changes according to the incident solar spectrum. With respect to a two-terminal triple junction tandem solar cell and interconnection of individual cells within it, the variation of limiting efficiency of a modified triple-tandem solar cell, in which two series-connected bottom cells are connected in parallel to the top cell, is lower than that of a conventional fully series-connected tandem cell. We calculate limiting efficiency of these two structures using measured solar spectra and meteorological condition at four different locations in Japan. It is shown that a triple junction tandem cell in a combination of series and parallel connections generates 7% larger amount of power than a series-connected cell does in average if these cells are optimized at airmass (AM) 1.5.

  20. Development and fabrication of a solar cell junction processing system. Quarterly report No. 2, July 1980

    SciTech Connect

    Siesling, R.

    1980-07-01

    The basic objectives of the program are the following: (1) to design, develop, construct and deliver a junction processing system which will be capable of producing solar cell junctions by means of ion implantation followed by pulsed electron beam annealing; (2) to include in the system a wafer transport mechanism capable of transferring 4-inch-diameter wafers into and out of the vacuum chamber where the ion implantation and pulsed electron beam annealing processes take place; (3) to integrate, test and demonstrate the system prior to its delivery to JPL along with detailed operating and maintenance manuals; and (4) to estimate component lifetimes and costs, as necessary for the contract, for the performance of comprehensive analyses in accordance with the Solar Array Manufacturing Industry Costing Standards (SAMICS). Under this contract the automated junction formation equipment to be developed involves a new system design incorporating a modified, government-owned, JPL-controlled ion implanter into a Spire-developed pulsed electron beam annealer and wafer transport system. When modified, the ion implanter will deliver a 16 mA beam of /sup 31/P/sup +/ ions with a fluence of 2.5 x 10/sup 15/ ions per square centimeter at an energy of 10 keV. The throughput design goal rate for the junction processor is 10/sup 7/ four-inch-diameter wafers per year.

  1. Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

    1987-01-01

    Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

  2. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and

  3. Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

    NASA Technical Reports Server (NTRS)

    Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

    1984-01-01

    The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

  4. New implantation techniques for improved solar cell junctions

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Bunker, S. N.

    1982-01-01

    Ion implantation techniques offering improved cell performance and reduced cost have been studied. These techniques include non-mass-analyzed phosphorus implantation, argon implantation gettering, and low temperature boron annealing. It is found that cells produced by non-mass-analyzed implantation perform as well as mass-analyzed controls, and that the cell performance is largely independent of process parameters. A study of argon implantation gettering shows no improvement over non-gettered controls. Results of low temperature boron annealing experiments are presented.

  5. High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

    NASA Technical Reports Server (NTRS)

    Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

    1986-01-01

    A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

  6. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    NASA Astrophysics Data System (ADS)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  7. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    SciTech Connect

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  8. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    DOE PAGESBeta

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  9. Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip; Scheiman, Chris; Goodbody, Chris; Baur, Carsten; Sharps, Paul; Imaizumi, Mitsuru; Yoo, Henry; Sahlstrom, Ted; Walters, Robert; Lorentzen, Justin; Nocerino, John; Khan, Osman; Cravens, Robert; Valles, Juan; Toporow, Chantal; Gomez, Trinidad,; Bazan, Loreto Pazos; Bailey, Sheila

    2006-01-01

    This paper reports the results of an international measurement round robin of monolithic, triple-junction, GaInP/GaAs/Ge space solar cells. Eight laboratories representing national labs, solar cell vendors and space solar cell consumers, measured cells using in-house reference cells and compared those results to measurements made where each lab used the same set of reference cells. The results show that most of the discrepancy between laboratories is likely due to the quality of the standard cells rather than the measurement system or solar simulator used.

  10. Stability of single and tandem junction a-Si:H solar cells grown using the ECR process

    SciTech Connect

    Dalal, V.L.; Maxson, T.; Girvan, R.; Haroon, S.

    1997-07-01

    The authors report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/A-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). They show that devices with high fill factors can be made using the H-ECR process. They also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.

  11. Reduction of solar cell efficiency by bulk defects across the back-surface-field junction

    NASA Technical Reports Server (NTRS)

    Sah, C. T.; Yamakawa, K. A.; Lutwack, R.

    1982-01-01

    The degradation of solar cell performance due to bulk defects distributed across the back-surface field junction is analyzed in terms of a three-region developed-perimeter model. Families of curves are computed and their physical significance is discussed in detail with reference to three parameters used to characterize the defects: defect area, defect density, and defect surface recombination velocity. A reduction in the open-circuit voltage due to the presence of a defect is expressed as a function of the defect area, density, cell thickness, and defect surface recombination velocity. Numerical examples are presented to illustrate the importance of the particular defect parameters.

  12. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires.

    PubMed

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Roca i Cabarrocas, Pere

    2012-05-17

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  13. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures.

    PubMed

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-08-14

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm(2) exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm(-2) because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells. PMID:27405387

  14. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures.

    PubMed

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-08-14

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm(2) exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm(-2) because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells.

  15. Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

    PubMed

    Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

    2016-04-01

    Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

  16. Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

    PubMed

    Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

    2016-04-01

    Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects. PMID:26971560

  17. Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter

    NASA Astrophysics Data System (ADS)

    Bock, Robert; Mau, Susanne; Schmidt, Jan; Brendel, Rolf

    2010-06-01

    We introduce an n-type Si back-junction back-contact solar cell based on an Al-doped p+ rear emitter fabricated by means of screen-printing and firing instead of the commonly applied high-temperature boron diffusion. In order to demonstrate the applicability of this easy-to-fabricate p+ emitter to a back-junction back-contact solar cell we present experimental results showing 19.0% cell efficiency. The structuring of the cell is performed by laser processing omitting any photolithography. Using two-dimensional device simulation we determine a realistic efficiency limit of 21.6% for this cell type.

  18. Development of a High Efficiency UVR/IRR Coverglass for Triple Junction Solar Cells

    NASA Technical Reports Server (NTRS)

    Russell, John; Jones, Glenn; Hall, James

    2007-01-01

    Cover glasses have been a necessary and integral part of space solar arrays since their inception. The main function of the cover glass is to protect the underlying solar cell from the harsh radiation environment of space. They are formed either from fused silica or specially formulated ceria doped glass types that are resistant to radiation damage, for example Pilkington's CMX, CMG, CMO. Solar cells have steadily increased in performance over the past years, from Silicon cells through textured Silicon cells to GaAs cells and the multijunction cells of today. The optimum coverglass solution for each of these cells has been different. The glass itself has also evolved. In some cases it has had its expansion coefficient matched to the cell substrate material, and in addition, added value has been derived from the application of thin film optical coatings to the coverglass. In the majority of cases this has taken the form of a single layer of MgF2 which acts as an antireflection coating. There are also conductive coatings to address electrostatic discharge issues (ESD) and Ultra Violet Reflective (UVR) and Infrared Reflective (IRR) coatings designed for thermal enhancement. Each type of coating can be applied singly or in combination. This paper describes a new type of UVR/IRR (or blue red reflector BRR) specifically designed for triple junction solar cells. For space applications, where radiation is the principal mechanism for removing heat from the satellite, it is the emittance and solar absorptance that primarily determine the temperature of the array. It is therefore essential that any coatings designed to have an effect on the temperature by reducing the solar absorption have a minimal effect on the overall emittance.

  19. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

    NASA Astrophysics Data System (ADS)

    Jäckle, Sara; Mattiza, Matthias; Liebhaber, Martin; Brönstrup, Gerald; Rommel, Mathias; Lips, Klaus; Christiansen, Silke

    2015-08-01

    We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.

  20. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

    PubMed Central

    Jäckle, Sara; Mattiza, Matthias; Liebhaber, Martin; Brönstrup, Gerald; Rommel, Mathias; Lips, Klaus; Christiansen, Silke

    2015-01-01

    We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction. PMID:26278010

  1. Unravelling the working junction of aqueous-processed polymer-nanocrystal solar cells towards improved performance.

    PubMed

    Chen, Zhaolai; Du, Xiaohang; Jin, Gan; Zeng, Qingsen; Liu, Fangyuan; Yang, Bai

    2016-06-21

    Hybrid solar cells (HSCs) based on aqueous polymers and nanocrystals are attractive due to their environmental friendliness and cost effectiveness. In this study, HSCs are fabricated from a series of water-soluble polymers with different highest occupied molecular orbital (HOMO) levels and nanocrystals with different Fermi levels. We demonstrate that the working principle of the aqueous-processed HSCs follows a p-n junction instead of a type-II heterojunction. The function of the polymer is to provide an interface dipole which can improve the build-in potential of the HSCs. Subsequently, the aqueous-processed HSCs are optimized following a p-n junction and an improved PCE of 5.41% is achieved, which is the highest for aqueous-processed HSCs. This study will provide instructive guidelines for the development of aqueous-processed HSCs. PMID:27229447

  2. Record high efficiency single-walled carbon nanotube/silicon p-n junction solar cells.

    PubMed

    Jung, Yeonwoong; Li, Xiaokai; Rajan, Nitin K; Taylor, André D; Reed, Mark A

    2013-01-01

    Carrier transport characteristics in high-efficiency single-walled carbon nanotubes (SWNTs)/silicon (Si) hybrid solar cells are presented. The solar cells were fabricated by depositing intrinsic p-type SWNT thin-films on n-type Si wafers without involving any high-temperature process for p-n junction formation. The optimized cells showed a device ideality factor close to unity and a record-high power-conversion-efficiency of >11%. By investigating the dark forward current density characteristics with varying temperature, we have identified that the temperature-dependent current rectification originates from the thermally activated band-to-band transition of carriers in Si, and the role of the SWNT thin films is to establish a built-in potential for carrier separation/collection. We have also established that the dominant carrier transport mechanism is diffusion, with minimal interface recombination. This is further supported by the observation of a long minority carrier lifetime of ~34 μs, determined by the transient recovery method. This study suggests that these hybrid solar cells operate in the same manner as single crystalline p-n homojunction Si solar cells.

  3. Physical model of back line-contact front-junction solar cells

    NASA Astrophysics Data System (ADS)

    Cuevas, Andres

    2013-04-01

    The analysis of advanced front-junction solar cells where the metal contact to the base region is locally formed on the back surface in the shape of lines usually requires numerical simulations. Here, we describe an approach based on a geometric formulation of carrier crowding towards the localized contact, in conjunction with a partition of the device in two distinct regions. This permits a one dimensional analysis of carrier flow, both in the region immediately adjacent to the contact and in the peripheral region surrounding it. The resulting model is simple enough to provide insight into the physics of device operation and reasonably accurate in cases of practical interest. By applying it to different cases, we identify unexpected anomalies and explain them in terms of the peculiar interplay between carrier transport and recombination that takes place in this type of solar cell.

  4. Study of novel chemical surface passivation techniques on GaAs pn junction solar cells

    SciTech Connect

    Mauk, M.G.; Xu, S.; Arent, D.J.; Mertens, R.P.; Borghs, G.

    1989-01-16

    Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na/sub 2/S, KOH, RuCl/sub 3/, and K/sub 2/Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority-carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5 x 10/sup 6/ cm/s (untreated surface) to 10/sup 3/ cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open-circuit voltage, and junction ''dark'' current.

  5. Laser annealing of ion implanted CZ silicon for solar cell junction formation

    NASA Technical Reports Server (NTRS)

    Katzeff, J. S.

    1981-01-01

    The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

  6. Understanding Light Harvesting in Radial Junction Amorphous Silicon Thin Film Solar Cells

    PubMed Central

    Yu, Linwei; Misra, Soumyadeep; Wang, Junzhuan; Qian, Shengyi; Foldyna, Martin; Xu, Jun; Shi, Yi; Johnson, Erik; Cabarrocas, Pere Roca i

    2014-01-01

    The radial junction (RJ) architecture has proven beneficial for the design of a new generation of high performance thin film photovoltaics. We herein carry out a comprehensive modeling of the light in-coupling, propagation and absorption profile within RJ thin film cells based on an accurate set of material properties extracted from spectroscopic ellipsometry measurements. This has enabled us to understand and evaluate the impact of varying several key parameters on the light harvesting in radially formed thin film solar cells. We found that the resonance mode absorption and antenna-like light in-coupling behavior in the RJ cell cavity can lead to a unique absorption distribution in the absorber that is very different from the situation expected in a planar thin film cell, and that has to be taken into account in the design of high performance RJ thin film solar cells. When compared to the experimental EQE response of real RJ solar cells, this modeling also provides an insightful and powerful tool to resolve the wavelength-dependent contributions arising from individual RJ units and/or from strong light trapping due to the presence of the RJ cell array. PMID:24619197

  7. Understanding light harvesting in radial junction amorphous silicon thin film solar cells.

    PubMed

    Yu, Linwei; Misra, Soumyadeep; Wang, Junzhuan; Qian, Shengyi; Foldyna, Martin; Xu, Jun; Shi, Yi; Johnson, Erik; Cabarrocas, Pere Roca I

    2014-03-12

    The radial junction (RJ) architecture has proven beneficial for the design of a new generation of high performance thin film photovoltaics. We herein carry out a comprehensive modeling of the light in-coupling, propagation and absorption profile within RJ thin film cells based on an accurate set of material properties extracted from spectroscopic ellipsometry measurements. This has enabled us to understand and evaluate the impact of varying several key parameters on the light harvesting in radially formed thin film solar cells. We found that the resonance mode absorption and antenna-like light in-coupling behavior in the RJ cell cavity can lead to a unique absorption distribution in the absorber that is very different from the situation expected in a planar thin film cell, and that has to be taken into account in the design of high performance RJ thin film solar cells. When compared to the experimental EQE response of real RJ solar cells, this modeling also provides an insightful and powerful tool to resolve the wavelength-dependent contributions arising from individual RJ units and/or from strong light trapping due to the presence of the RJ cell array.

  8. High voltage series connected tandem junction solar battery

    DOEpatents

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  9. Aluminum oxide passivated radial junction sub-micrometre pillar array textured silicon solar cells

    NASA Astrophysics Data System (ADS)

    Pudasaini, Pushpa Raj; Elam, David; Ayon, Arturo A.

    2013-06-01

    We report radial, p-n junction, sub-micrometre, pillar array textured solar cells, fabricated on an n-type Czochralski silicon wafer. Relatively simple processing schemes such as metal-assisted chemical etching and spin on dopant techniques were employed for the fabrication of the proposed solar cells. Atomic layer deposition (ALD) grown aluminum oxide (Al2O3) was employed as a surface passivation layer on the B-doped emitter surface. In spite of the fact that the sub-micrometre pillar array textured surface has a relatively high surface-to-volume ratio, we observed an open circuit voltage (VOC) and a short circuit current density (JSC) as high as 572 mV and 29.9 mA cm-2, respectively, which leads to a power conversion efficiency in excess of 11.30%, for the optimized structure of the solar cell described herein. Broadband omnidirectional antireflection effects along with the light trapping property of the sub-micrometre, pillar array textured surface and the excellent passivation quality of the ALD-grown Al2O3 on the B-doped emitter surface were responsible for the enhanced electrical performance of the proposed solar cells.

  10. Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Haase, F.; Eidelloth, S.; Horbelt, R.; Bothe, K.; Garralaga Rojas, E.; Brendel, R.

    2011-12-01

    We investigate power losses in back-contact back-junction monocrystalline thin-film silicon solar cells fabricated using the porous silicon layer transfer process. Our loss analysis combines two-dimensional finite element modeling and resistance network simulations. The input parameters of the finite element modeling are determined experimentally by measuring saturation current densities and sheet resistances on test samples prepared identically to the solar cells. Characteristic solar cell parameters such as short circuit current, open circuit voltage, fill factor, and efficiency of measured and network simulated current voltage characteristics investigated in this study match within an uncertainty of 5%. Free energy loss analysis serves as comparison of all losses in units of power per area at the maximum power point. The largest loss is bulk recombination due to a carrier lifetime of 2 μs in the epitaxial Si layer. Further significant losses result from recombination at the base contacts characterized by a diode saturation current density of 50 000 fA cm-2 as well as resistive losses due to lateral majority carrier current flows within the solar cell base and contact resistance losses.

  11. Gap/silicon Tandem Solar Cell with Extended Temperature Range

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A. (Inventor)

    2006-01-01

    A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

  12. Method for forming p-n junctions and solar-cells by laser-beam processing

    DOEpatents

    Narayan, Jagdish; Young, Rosa T.

    1979-01-01

    This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

  13. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    NASA Astrophysics Data System (ADS)

    Shen, Haoting

    The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and

  14. Progress in GaAs/CuInSe2 tandem junction solar cells

    NASA Technical Reports Server (NTRS)

    Kim, N. P.; Burgess, R. M.; Mickelsen, R. A.; Stanbery, B. J.; Mcclelland, R. W.; King, B. D.; Gale, R. P.

    1991-01-01

    Much more power is required for spacecraft of the future than current vehicles. To meet this increased demand for power while simultaneously meeting other requirements for launch, deployment, and maneuverability, the development of higher-efficiency, lighter-weight, and more radiation resistant photovoltaic cells is essential. Mechanically stacked tandem junction solar cells based on (AlGaAs)GaAs thin film CLEFT (Cleavage of Lateral Epitaxial Film for Transfer) top cells and CuInSe2(CIS) thin film bottom cells are being developed to meet these power needs. The mechanically stacked tandem configuration is chosen due to its interconnect flexibility allowing more efficient array level performance. It also eliminates cell fabrication processing constraints associated with monolithically integrated multi-junction approaches, thus producing higher cell fabrication yields. The GaAs cell is used as the top cell due to its demonstrated high efficiency, and good radiation resistance. Furthermore, it offers a future potential for bandgap tuning using AlGaAs as the absorber to maximize cell performance. The CuInSe2 cell is used as the bottom cell due to superb radiation resistance, stability, and optimal bandgap value in combination with an AlGaAs top cell. Since both cells are incorporated as thin films, this approach provides a potential for very high specific power. This high specific power (W/kg), combined with high power density (W/sq m) resulting from the high efficiency of this approach, makes these cells ideally suited for various space applications.

  15. High performance anti-reflection coatings for broadband multi-junction solar cells

    SciTech Connect

    AIKEN,DANIEL J.

    2000-02-23

    The success of bandgap engineering has made high efficiency broadband multi-junction solar cells possible with photo-response out to the band edge of Ge. Modeling has been conducted which suggests that current double layer anti-reflection coating technology is not adequate for these devices in certain cases. Approaches for the development of higher performance anti-reflection coatings are examined. A new AR coating structure based on the use of Herpin equivalent layers is presented. Optical modeling suggests a decrease in the solar weighted reflectance of over 2.5{percent} absolute as a result. This structure requires no additional optical material development and characterization because no new optical materials are necessary. Experimental results and a sensitivity analysis are presented.

  16. Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.

    1981-01-01

    New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

  17. Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

    SciTech Connect

    Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

    2012-06-01

    We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. We found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.

  18. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

    SciTech Connect

    Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T.; Romero, M. J.; Norman, A. G.; Jones, K. M.

    2008-05-01

    We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

  19. Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping.

    PubMed

    Dong, Gangqiang; Liu, Fengzhen; Liu, Jing; Zhang, Hailong; Zhu, Meifang

    2013-01-01

    A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm-3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.

  20. Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

    PubMed Central

    2013-01-01

    A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm−3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells. PMID:24369781

  1. "Direct" measurement of sheet resistance in inter-subcell layers of multi-junction solar cells

    NASA Astrophysics Data System (ADS)

    Rumyantsev, Valery D.; Larionov, Valery R.; Pokrovskiy, Pavel V.

    2015-09-01

    The multi-junction cells are sensitive to chromatic aberrations inherent to the lens-type concentrators. At spectrally and spatially inhomogeneous distribution of incident light, considerable lateral currents flow along the inter-subcell layers causing a voltage drop across corresponding sheet resistance and, consequently, a decrease in the cell conversion efficiency. The sheet resistance unit is Ohm-per-square that corresponds to the resistance between two bar-type electrodes on the opposite sides of a thin conductive square. A method of "direct" measurement of this parameter is proposed using lasers for local illumination of the strip-in-shape parts of a rectangular-in-form tested cell. These illuminated parts play a role of electrodes for a lateral current induced by photoexitation. Wavelengths of the lasers have to be chosen to generate photocurrents independently in the neighboring subcells, as well as locally in the upper and lower ones. SPICE model of the method is analyzed and experimental results on the InGaP/InGaAs/Ge triple-junction solar cells are presented.

  2. Use of amorphous silicon tandem junction solar cells for hydrogen production in a photoelectrochemical cell

    NASA Astrophysics Data System (ADS)

    Stavrides, Alex; Kunrath, Augusto; Hu, Jian; Treglio, Richard; Feldman, Ari; Marsen, Bjorn; Cole, Brian; Miller, Eric; Madan, Arun

    2006-08-01

    We report the use of amorphous silicon (a-Si) tandem junctions as part of an integral "hybrid" photoelectrochemical (PEC) cell to produce hydrogen directly from water using sunlight. The device configuration consists of stainless steel (SS)/ni IIpni Ip/ZnO/WO 3. When the device is immersed in an electrolyte and illuminated, O II is evolved at the WO 3/electrolyte interface and H II is produced at the counter electrode. A voltage >1.23V is required to split water; typically 1.6-1.8V are needed, taking account of losses in a practical water-splitting system. We use a-Si tandem cells, deposited by plasma-enhanced chemical vapor deposition, to supply this voltage. Current matching in the two a-Si subcells is achieved by altering the thicknesses of the two layers (i I and i II) while keeping their band gaps at ~1.75eV, which results in a device with an open circuit voltage >1.6V, short circuit current density (J sc) >6mA/cm2 (on SS substrates), and a fill factor >0.6. Deposition on a textured SnO II coated glass has resulted in J sc >9mA/cm2. Photoactive WO 3 films, deposited using the RF sputtering technique, have achieved photocurrents >3mA/cm2 at 1.6V vs. saturated calomel electrode (SCE). The PEC device operates at the point at which the WO 3 photocurrent IV curve and the a-Si (filtered by WO 3) light IV curve cross, leading to operating currents of 2.5mA/cm2 and solar-to-hydrogen (STH) conversion efficiency of >3%.

  3. An induced junction photovoltaic cell

    NASA Technical Reports Server (NTRS)

    Call, R. L.

    1974-01-01

    Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

  4. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  5. Synthesis and characterization of tin disulfide nanocrystals for hybrid bulk hetero-junction solar cell applications

    NASA Astrophysics Data System (ADS)

    Truong, Nguyen Tam Nguyen; Park, Chinho

    2016-03-01

    SnS2 nanoparticles (NPs) were synthesized using a modified hot injection method, and the morphological, structural, optical properties and chemical composition of the SnS2 NPs were characterized using a range of analysis techniques. Transmission electron microscopy (TEM) revealed distorted-hexagonal shape and particle size of the assynthesized nanoparticles. X-ray diffraction (XRD) showed that the SnS2 NPs had high crystallinity with hexagonal structure. Ultravioletvisible (UV-vis) absorption spectrum revealed an absorption band at 440nm due to SnS2 nanoparticles. Solar cell devices based on the blending of a conjugated polymer as a donor material and SnS2 (NPs) as an acceptor material were fabricated, and the device performance was tested. The solar cell efficiency was improved by optimizing the thickness of active layer containing the well-controlled SnS2 NPs, and increasing the light harvesting using a low band gap polymer. The results indicate that the SnS2 NPs can be good candidate materials for bulk hetero-junction (BHJ) solar cells. [Figure not available: see fulltext.

  6. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    NASA Technical Reports Server (NTRS)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  7. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  8. Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Li, S. S.; Sah, C. T.

    1975-01-01

    Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

  9. Characterizing the effects of silver alloying in chalcopyrite CIGS solar cells with junction capacitance methods

    SciTech Connect

    Erslev, Peter T.; Hanket, Gregory M.; Shafarman, William N.; Cohen, J. David

    2009-04-01

    A variety of junction capacitance-based characterization methods were used to investigate alloys of Ag into Cu(In1-xGax)Se2 photovoltaic solar cells over a broad range of compositions. These alloys show encouraging trends of increasing VOC with increasing Ag content, opening the possibility of wide-gap cells for use in tandem device applications. Drive level capacitance profiling (DLCP) has shown very low free carrier concentrations for all Ag-alloyed devices, in some cases less than 1014 cm-3, which is roughly an order of magnitude lower than that of CIGS devices. Transient photocapacitance spectroscopy has revealed very steep Urbach edges, with energies between 10 meV and 20 meV, in the Ag-alloyed samples. This is in general lower than the Urbach edges measured for standard CIGS samples and suggests a significantly lower degree of structural disorder.

  10. Comparison of Theoretical Efficiencies of Multi-junction Concentrator Solar Cells

    SciTech Connect

    Kurtz, S.; Myers, D.; McMahon, W. E.; Geisz, J.; Steiner, M.

    2008-01-01

    Champion concentrator cell efficiencies have surpassed 40% and now many are asking whether the efficiencies will surpass 50%. Theoretical efficiencies of >60% are described for many approaches, but there is often confusion about the theoretical efficiency for a specific structure. The detailed balance approach to calculating theoretical efficiency gives an upper bound that can be independent of material parameters and device design. Other models predict efficiencies that are closer to those that have been achieved. Changing reference spectra and the choice of concentration further complicate comparison of theoretical efficiencies. This paper provides a side-by-side comparison of theoretical efficiencies of multi-junction solar cells calculated with the detailed balance approach and a common one-dimensional-transport model for different spectral and irradiance conditions. Also, historical experimental champion efficiencies are compared with the theoretical efficiencies.

  11. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.; Mcneely, J. B.; Barnett, A. M.

    1991-01-01

    The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-developed bottom solar cell for improved system performance. This is an approach to improve the performance and scale of space photovoltaic power systems. Mechanically stacked tandem solar cell concentrator systems based on the AlGaAs top concentrator solar cell can provide near term efficiencies of 36 percent (AMO, 100x). Possible tandem stack efficiencies greater than 38 percent (100x, AMO) are feasible with a careful selection of materials. In a three solar cell stack, system efficiencies exceed 41 percent (100x, AMO). These device results demonstrate a practical solution for a state-of-the-art top solar cell for attachment to an existing, well-developed solar cell.

  12. Can plasmonic Al nanoparticles improve absorption in triple junction solar cells?

    PubMed

    Yang, L; Pillai, S; Green, M A

    2015-07-03

    Plasmonic nanoparticles located on the illuminated surface of a solar cell can perform the function of an antireflection layer, as well as a scattering layer, facilitating light-trapping. Al nanoparticles have recently been proposed to aid photocurrent enhancements in GaAs photodiodes in the wavelength region of 400-900 nm by mitigating any parasitic absorption losses. Because this spectral region corresponds to the top and middle sub-cell of a typical GaInP/GaInAs/Ge triple junction solar cell, in this work, we investigated the potential of similar periodic Al nanoparticles placed on top of a thin SiO2 spacer layer that can also serve as an antireflection coating at larger thicknesses. The particle period, diameter and the thickness of the oxide layers were optimised for the sub-cells using simulations to achieve the lowest reflection and maximum external quantum efficiencies. Our results highlight the importance of proper reference comparison, and unlike previously published results, raise doubts regarding the effectiveness of Al plasmonic nanoparticles as a suitable front-side scattering medium for broadband efficiency enhancements when compared to standard single-layer antireflection coatings. However, by embedding the nanoparticles within the dielectric layer, they have the potential to perform better than an antireflection layer and provide enhanced response from both the sub-cells.

  13. Numerical study of metal oxide hetero-junction solar cells with defects and interface states

    NASA Astrophysics Data System (ADS)

    Zhu, Le; Shao, Guosheng; Luo, J. K.

    2013-05-01

    Further to our previous work on ideal metal oxide (MO) hetero-junction solar cells, a systematic simulation has been carried out to investigate the effects of defects and interface states on the cells. Two structures of the window/absorber (WA) and window/absorber/voltage-enhancer (WAV) were modelled with defect concentration, defect energy level, interface state (ISt) density and ISt energy level as parameters. The simulation showed that the defects in the window layer and the voltage-enhancer layer have very limited effects on the performance of the cells, but those in the absorption layer have profound effects on the cell performance. The interface states at the W/A interface have a limited effect on the performance even for a density up to 1013 cm-2, while those at the A/V interface cause the solar cell to deteriorate severely even at a low density of lower than 1 × 1011 cm-2. It also showed that the back surface field (BSF) induced by band gap off-set in the WAV structure loses its function when defects with a modest concentration exist in the absorption layer and does not improve the open voltage at all.

  14. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    SciTech Connect

    Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Brewer, J.A.; Catalano, A.W.; D'Aiello, R.V.; Dickson, C.R.; Fortmann, C.M.; Newton, J.L.; O'Dowd, J.G.; Oswald, R.S.; Wiedeman, S. . Thin Film Div.)

    1989-09-01

    This report present results of the third phase of research in high-efficiency, single-junction, monolithic, thin-film, a-Si solar cells. Six glow-discharge deposition systems, including an in-line multichamber system, were used to grow both doped and undoped a-Si films. In single load-lock system, a-Si was deposited over 1000- cm{sup 2} substrates with less then a 1% variation in thickness and low oxygen impurity levels. The system produced 1000-cm{sup 2} submodules with active-area efficiencies of 8.7%. A model was developed for light scattering in textured tin oxide that predicts scattered transmission through the air/glass/tin oxide/air configuration to within a few percent. Textured tin oxide films were grown by chemical vapor deposition using tin tetrachloride. Solar-cell efficiencies of about 11% were obtained in small-area p-i-n cells with reflective back contacts of Ti/Ag that exhibit external quantum efficiencies as high as 58.7% at 700 nm; other cells with ITO/Ag back contacts have had quantum efficiencies as high as 64% at 700 nm. High-performance cells were fabricated by employing dopant and carbon concentration gradients near the p/i interface. Total-area efficiencies around 8% were obtained for submodules in which the patterning was done by laser scribing. 11 refs., 35 figs., 18 tabs.

  15. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  16. Tandem photovoltaic solar cell with III-V diffused junction booster cell

    SciTech Connect

    Fraas, L.M.; Avery, J.E.; Girard, G.R.

    1992-02-25

    This patent describes a GaAs/GaSb tandem solar cell having improved conversion efficiency. It comprises: a GaAs upper cell having a predetermined bandgap selected for optimal performance of the tandem solar cell; a GaSb booster cell positioned beneath the GaAs upper cell to receive light transmitted through the GaAs upper cell and responsive to such light; and light conditioning means associated with the upper cell and the booster cell for achieving and energy conversion efficiency of at least 31% AMO. This patent also describes the cell as defined in claim 2, wherein the light conditioning means includes a prismatic coverglass for optically eliminating grid line obscuration losses on at least the upper cell and a concentrating lens for focusing solar energy onto an upper surface of the upper cell.

  17. Status of Diffused Junction p(+)n InP Solar Cells for Space Applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Goradia, C.; Fatemi, N. S.; Jenkins, P. P.; Wilt, D. M.; Bailey, S.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  18. Status of diffused junction p+n InP solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Goradia, C.; Faur, Maria; Fatemi, N. S.; Jenkins, P. P.; Flood, D. J.; Brinker, D. J.; Wilt, D. M.; Bailey, S.; Goradia, M.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  19. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  20. Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

    NASA Technical Reports Server (NTRS)

    Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

    2002-01-01

    Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

  1. Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model

    NASA Technical Reports Server (NTRS)

    Goradia, C.; Vaughn, J.; Baraona, C. R.

    1980-01-01

    A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).

  2. Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated by protons

    NASA Astrophysics Data System (ADS)

    Maximenko, S. I.; Lumb, M. P.; Messenger, S. R.; Hoheisel, R.; Affouda, C.; Scheiman, D.; Gonzalez, M.; Lorentzen, J.; Jenkins, P. P.; Walters, R. J.

    2014-03-01

    Experimental results on triple-junction solar cells irradiated by 3 MeV proton irradiation to very high damage levels are presented. The minority carrier transport properties were obtained through quantum efficiency and EBIC measurements and an analytical drift-diffusion solver was used in understanding the results for different degradation levels where multiple damage mechanisms are evident.

  3. Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

    PubMed

    Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2012-08-01

    Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells. PMID:22822909

  4. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

    NASA Astrophysics Data System (ADS)

    Mariani, Giacomo

    transparent electrode. The second design delves into an in-situ InGaP passivation shell to alleviate the deleterious recombination effects caused by surface states. The efficiency improvement is over six-fold, up to 6.63%, compared to unpassivated devices. Lastly, a p-i-n radial junction nanopillar solar cell highlights external quantum efficiencies in great agreement with numerical simulations. In such framework, the dome morphology of the top transparent contact is found to concentrate and intensify the optical field within the nanopillar active volume, resulting into resonance peaks in the quantum yield measurements, at 7.43% efficiency. These findings confirm the potential of 3D nanopillar solar cells as a cost-effective platform with respect to canonical thin-film photovoltaics.

  5. High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures

    NASA Astrophysics Data System (ADS)

    Stan, M.; Aiken, D.; Cho, B.; Cornfeld, A.; Ley, V.; Patel, P.; Sharps, P.; Varghese, T.

    2010-04-01

    We have produced a monolithically grown, two-terminal, series connected, quadruple junction III-V solar cell with a 1 sun AM0 conversion efficiency of 33.6%. The device epitaxial layers were grown using organometallic vapor phase epitaxy in an inverted order with a 1.91 eV GaInP subcell grown lattice-matched to a GaAs substrate followed by the growth of a lattice-matched 1.42 eV GaAs subcell, a metamorphic 1.02 eV GaInAs subcell, and a metamorphic 0.7 eV GaInAs subcell. This combination of bandgap energies is nearly ideal in that the current generation in each of the four subcells is nearly identical with absorption limited subcell thicknesses. We will discuss the motivation and development for a particular embodiment of the quadruple junction as well as the outlook for future improvements.

  6. High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions

    NASA Astrophysics Data System (ADS)

    Wang, Liang-Xing; Zhou, Zhi-Quan; Zhang, Tian-Ning; Chen, Xin; Lu, Ming

    2016-10-01

    Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely connected to the PN one, and when its barrier height/ e is close to the open-circuit voltage of the solar cell, very high FF is obtainable. In this work, although the open-circuit voltage (<580 mV) is not high here, the efficiency of c-Si solar cell still reaches the state-of-the-art value (>20 %) due to the high FF achieved.

  7. Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate

    NASA Astrophysics Data System (ADS)

    Kudryashov, D. A.; Gudovskikh, A. S.; Mozharov, A. M.; Bol'shakov, A. D.; Mukhin, I. S.; Alferov, Zh. I.

    2015-12-01

    Design and operation modes of double-junction monolithic lattice-matched solar cells based on the ZnSiP2/Si system of materials have been calculated. The effect of the photoactive region thickness and minority carrier lifetime in ZnSiP2 layers on the efficiency of conversion of the incident solar light energy into electrical power was determined. It is shown that solar cells based on ZnSiP2/Si heterostructures can provide efficiencies of 28.8% at AM1.5D, 100 mW/cm2, and 33.3% at AM1.5D, 200 W/cm2.

  8. Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage.

    PubMed

    Venkatesan, Swaminathan; Ngo, Evan C; Chen, Qiliang; Dubey, Ashish; Mohammad, Lal; Adhikari, Nirmal; Mitul, Abu Farzan; Qiao, Qiquan

    2014-06-21

    Single and double junction solar cells with high open circuit voltage were fabricated using poly{thiophene-2,5-diyl-alt-[5,6-bis(dodecyloxy)benzo[c][1,2,5]thiadiazole]-4,7-diyl} (PBT-T1) blended with fullerene derivatives in different weight ratios. The role of fullerene loading on structural and morphological changes was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). The XRD and AFM measurements showed that a higher fullerene mixing ratio led to breaking of inter-chain packing and hence resulted in smaller disordered polymer domains. When the PBT-T1:PC60BM weight ratio was 1 : 1, the polymer retained its structural order; however, large aggregated domains formed, leading to poor device performance due to low fill factor and short circuit current density. When the ratio was increased to 1 : 2 and then 1 : 3, smaller amorphous domains were observed, which improved photovoltaic performance. The 1 : 2 blending ratio was optimal due to adequate charge transport pathways giving rise to moderate short circuit current density and fill factor. Adding 1,8-diiodooctane (DIO) additive into the 1 : 2 blend films further improved both the short circuit current density and fill factor, leading to an increased efficiency to 4.5% with PC60BM and 5.65% with PC70BM. These single junction solar cells exhibited a high open circuit voltage at ∼ 0.9 V. Photo-charge extraction by linearly increasing voltage (Photo-CELIV) measurements showed the highest charge carrier mobility in the 1 : 2 film among the three ratios, which was further enhanced by introducing the DIO. The Photo-CELIV measurements with varying delay times showed significantly higher extracted charge carrier density for cells processed with DIO. Tandem devices using P3HT:IC60BA as bottom cell and PBT-T1:PC60BM as top cell exhibited a high open circuit voltage of 1.62 V with 5.2% power conversion efficiency. PMID:24844939

  9. Optical losses in multi-junction a-Si:H based solar cells and modules

    NASA Astrophysics Data System (ADS)

    Wiedeman, S.; Morris, J.; Yang, L.

    A comprehensive optical model is described which is applicable to glass/textured CTO/a-Si:H/a-SiGe:H-based multijunction cells and allows the calculation of optical absorption in each layer of the solar cell. The major optical losses which limit the output current density of tandem cells using 1.72-eV/1.50-eV bandgap a-Si:H/a-SiGe:H and an ITO/Ag rear contact to about 20.8 mA/sq cm (sum of both junctions) are identified and discussed. It is shown that improvements in the reflectivity and scattering properties of the rear contact may be expected to result in current densities of 22.3 mA/sq cm in this type of cell using intrinsic layers of limited thickness. The use of low-cost materials, such as soda-lime glass and the aluminum rear contacts typically employed in the manufacture of large-area modules, should reduce the total current density available to 18.5 mA/sq cm.

  10. Investigation of InGaP/(In)AlGaAs/GaAs triple-junction top cells for smart stacked multijunction solar cells grown using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sugaya, Takeyoshi; Mochizuki, Toru; Makita, Kikuo; Oshima, Ryuji; Matsubara, Koji; Okano, Yoshinobu; Niki, Shigeru

    2015-08-01

    We report high-quality InGaP/(In)AlGaAs/GaAs triple-junction solar cells fabricated using solid-source molecular beam epitaxy (MBE) for the first time. The triple-junction cells can be used as top cells for smart stacked multijunction solar cells. A growth temperature of 480 °C was found to be suitable for an (In)AlGaAs second cell to obtain high-quality tunnel junctions. The properties of AlGaAs solar cells were better than those of InAlGaAs solar cells when a second cell was grown at 480 °C. The high-quality InGaP/AlGaAs/GaAs solar cell had an impressive open-circuit voltage of 3.1 V. This result indicates that high-performance InGaP/AlGaAs/GaAs triple-junction solar cells can be fabricated using solid-source MBE.

  11. Very thin and stable thin-film silicon alloy triple junction solar cells by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Veldhuizen, L. W.; Schropp, R. E. I.

    2016-08-01

    We present a silicon-based triple junction solar cell that requires a deposition time of less than 15 min for all photoactive layers. As a low-bandgap material, we used thin layers of hydrogenated amorphous silicon germanium with lower band gap than commonly used, which is possible due to the application of hot wire chemical vapor deposition. The triple junction cell shows an initial energy conversion efficiency exceeding 10%, and with a relative performance stability within 6%, the cell shows a high tolerance to light-induced degradation. With these results, we help to demonstrate that hot wire chemical vapor deposition is a viable deposition method for the fabrication of low-cost solar cells.

  12. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    NASA Astrophysics Data System (ADS)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  13. InP tunnel junction for InGaAs/InP tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  14. Preparation of nano-patterned Si structures for hetero-junction solar cells

    NASA Astrophysics Data System (ADS)

    Lu, Peng; Xu, Jun; Cao, Yunqing; Lai, Jingwei; Xu, Ling; Chen, Kunji

    2015-04-01

    The 220 nm and 300 nm periodically nano-patterned Si structures with low aspect ratio were fabricated by nano-sphere lithography technique. A good anti-reflection properties in a broadband spectral range (300-1200 nm) was exhibited due to the gradually changing refractive index of the formed Si nanostructures. After deposition of the intrinsic and phosphorous-doped (P-doped) amorphous Si (a-Si) film, the weighted mean reflection of the 220 nm and 300 nm periodic nanostructures was further reduced to 3.30% and 2.96%, respectively. Due to the enhanced light absorption, both the IQE and EQE of the nano-patterned cells were improved in a wide spectral range. For the 300 nm periodically nano-patterned prototype hetero-junction solar cell, the short circuit current density was increased to 34.5 mA/cm2, which was obviously improved compared with 26.8 mA/cm2 for the flat cell.

  15. Self-deposition of Pt nanoparticles on graphene woven fabrics for enhanced hybrid Schottky junctions and photoelectrochemical solar cells.

    PubMed

    Kang, Zhe; Tan, Xinyu; Li, Xiao; Xiao, Ting; Zhang, Li; Lao, Junchao; Li, Xinming; Cheng, Shan; Xie, Dan; Zhu, Hongwei

    2016-01-21

    In this study, we demonstrated a self-deposition method to deposit Pt nanoparticles (NPs) on graphene woven fabrics (GWF) to improve the performance of graphene-on-silicon solar cells. The deposition of Pt NPs increased the work function of GWF and reduced the sheet resistance of GWF, thereby improving the power conversion efficiency (PCE) of graphene-on-silicon solar cells. The PCE (>10%) was further enhanced via solid electrolyte coating of the hybrid Schottky junction in the photoelectrochemical solar cells. These results suggest that the combination of self-deposition of Pt NPs and solid-state electrolyte coating of graphene-on-silicon is a promising way to produce high performance graphene-on-semiconductor solar cells. PMID:26686903

  16. InGaAs axial-junction nanowire-array solar cells

    NASA Astrophysics Data System (ADS)

    Nakai, Eiji; Chen, Muyi; Yoshimura, Masatoshi; Tomioka, Katsuhiro; Fukui, Takashi

    2015-01-01

    Axial p-i-n junction nanowire (NW) solar cells (SCs) with a position-controlled GaAs-based NW array were fabricated by selective-area metal organic vapor phase epitaxy (SA-MOVPE). The measured electron-beam-induced current (EBIC) signals showed the formation of an axial p-i-n junction, which confirms power generation under sunlight illumination. The series resistance of the NW SCs is much higher than that of conventional planar SCs based on Si or other III-V compound semiconductors. The main difficulty concerning the fabrication of these NW SCs is the degradation of series resistance between the GaAs-based NWs and the indium-tin oxide (ITO) deposited as a transparent electrode. The series resistance of the fabricated GaAs-based NW SCs was reduced by introducing a tin doping contact layer between the ITO and the NW array, which is formed by pulse doping. As a result of this improved structure, the fabricated SCs exhibited an open-circuit voltage of 0.544 V, a short-circuit current of 18.2 mA/cm2, and a fill factor of 0.721 for an overall conversion efficiency of 7.14% under AM1.5G illumination. The series resistance of the SCs could be decreased to 0.132 Ω·cm2, which is one order of magnitude lower than that of the SC without a highly doped contact layer. This reduced series resistance indicates that nanostructure SCs with transparent electrodes and multijunction NW SCs with high efficiencies can be fabricated on a commercial basis in the near future.

  17. Light Induced Junction Modification in Copper Indium-Diselenide and Other Thin-Film Solar Cells.

    NASA Astrophysics Data System (ADS)

    Potter, Richard Robert

    The current-voltage characteristics of many illuminated heterostructure diodes are shifted to lower voltages than those expected from the superposition principle. The practical result is often a low open circuit voltage. The voltage shift for CdS/CuInSe(,2) solar cells is as much as 100 mV at room temperature. These cells are studied in detail and a heterojunction model proposed for both dark and light conditions. Dependence of the shift on light intensity, wavelength, temperature, and time after the light is blocked is investigated. Thermal heating of the junction by the light is discounted in favor of optical excitation of interfacial states. The states trap charge under illumination and modify the effective barrier to carrier transport. Unipolar or dipolar electric charge densities near the interface the order of 10('12) cm('-2) are sufficient to explain the observed shift of 100 mV. The shift increases with light intensity until near 100 mW/cm('2) where the charging of states approach saturation. The charging effect is due to a mixture of states in the CuInSe(,2) bandgap which dominate the shift and states in the CdS which result in a second order spectral dependence. The relaxation to the equilibrium dark condition indicates that many states with long time constants are involved.

  18. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells.

    PubMed

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, JunHo; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-07-01

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells. PMID:26061271

  19. Organic/inorganic hybrid pn-junction between copper phthalocyanine and CdSe quantum dot layers as solar cells

    NASA Astrophysics Data System (ADS)

    Saha, Sudip K.; Guchhait, Asim; Pal, Amlan J.

    2012-08-01

    We have introduced an organic/inorganic hybrid pn-junction for solar cell applications. Layers of II-VI quantum dots and a metal-phthalocyanine in sequence have been used as n- and p-type materials, respectively, to form a junction. The film of quantum dots has been formed through a layer-by-layer process by replacing the long-chain ligands of the nanoparticles in each ultrathin layer or a monolayer with short-chain ones so that interparticle distance becomes small leading to a decrease in resistance of the quantum dot layer. With indium tin oxide and Au as electrodes, we have formed an inverted sandwiched structure. These electrodes formed ohmic contacts with the neighboring materials. From the current-voltage characteristics of the hybrid heterostructure, we have inferred formation of a depletion region at the pn-junction that played a key role in charge separation and correspondingly a photocurrent in the external circuit. For comparison, we have also formed and characterized Schottky devices based on components of the pn-junction keeping the electrode combination same. From capacitance-voltage characteristics, we have observed that the depletion region of the hybrid pn-junction was much wider as compared to that in Schottky devices based on components of the junction.

  20. Palladium nanoparticle array-mediated semiconductor bonding that enables high-efficiency multi-junction solar cells

    NASA Astrophysics Data System (ADS)

    Mizuno, Hidenori; Makita, Kikuo; Sugaya, Takeyoshi; Oshima, Ryuji; Hozumi, Yasuo; Takato, Hidetaka; Matsubara, Koji

    2016-02-01

    A detailed study on the application of Pd nanoparticle arrays, produced by self-assembled block copolymer templates, in bonding of III-V-based solar cell materials was carried out. The Pd nanoparticle array-mediated bonding (mechanical stacking) of GaAs-based thin-films (cells) was readily performed on the surface of GaAs or InP-based substrates (cells) to form multi-junction device architectures. Using the optimized Pd NP array, a 30.4%-efficiency four-junction two-terminal cell, consisting of an InGaP/GaAs top cell and an InGaAsP/InGaAs bottom cell, was achieved owing to the excellent electrical and optical bonding properties (bonding resistance, 1.81 Ω cm2; optical loss, 2.9%). Together with the verification of the long-term reliability of the Pd nanoparticle array-mediated bonding, our approach would become practically attractive for producing high-efficiency multi-junction solar cells.

  1. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOEpatents

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

  2. Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1981-01-01

    The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

  3. Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

    NASA Technical Reports Server (NTRS)

    Vonroos, O. H. (Inventor)

    1978-01-01

    Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

  4. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  5. High Efficiency Amorphous and Microcrystalline Silicon Based Double-Junction Solar Cells made with Very-High-Frequency Glow Discharge

    SciTech Connect

    Banerjee, Arindam

    2004-10-20

    We have achieved a total-area initial efficiency of 11.47% (active-area efficiency of 12.33%) on a-Si:H/μc-Si:H double-junction structure, where the intrinsic layer bottom cell was made in 50 minutes. On another device in which the bottom cell was made in 30 min, we achieved initial total-area efficiency of 10.58% (active-efficiency of 11.35%). We have shown that the phenomenon of ambient degradation of both μc-Si:H single-junction and a-Si:H/μc-Si:H double-junction cells can be attributed to impurity diffusion after deposition. Optimization of the plasma parameters led to alleviation of the ambient degradation. Appropriate current matching between the top and bottom component cells has resulted in a stable total-area efficiency of 9.7% (active-area efficiency of 10.42%) on an a-Si:H/μc-Si:H double-junction solar cell in which the deposition time for the μc-Si:H intrinsic layer deposition was of 30 min.

  6. Junction studies on electrochemically fabricated p-n Cu(2)O homojunction solar cells for efficiency enhancement.

    PubMed

    McShane, Colleen M; Choi, Kyoung-Shin

    2012-05-01

    p-n Cu(2)O homojunction solar cells were electrochemically fabricated by consecutively depositing an n-Cu(2)O layer on a p-Cu(2)O layer. In order to better understand the Fermi levels of the electrochemically grown polycrystalline p- and n-Cu(2)O layers and maximize the overall cell performance, the back and front contacts of the Cu(2)O homojunction cells were systematically changed and the I-V characteristics of the resulting cells were examined. The result shows that the intrinsic doping levels of the electrochemically prepared p-Cu(2)O and n-Cu(2)O layers are very low and they made almost Ohmic junctions with Cu metal with which previously studied p-Cu(2)O layers prepared by thermal oxidation of Cu foils are known to form Schottky junctions. The best cell performance (an η of 1.06%, a V(OC) of 0.621 V, an I(SC) of 4.07 mA cm(-2), and a fill factor (ff) of 42%) was obtained when the p-Cu(2)O layer was deposited on a commercially available ITO substrate as the back contact and a sputter deposited ITO layer was used as the front contact on the n-Cu(2)O layer. The unique features of the p-n Cu(2)O homojunction solar cell are discussed in comparison with other Cu(2)O-based heterojunction solar cells.

  7. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  8. High efficiency Schottky junction solar cells by co-doping of graphene with gold nanoparticles and nitric acid

    NASA Astrophysics Data System (ADS)

    Liu, X.; Zhang, X. W.; Meng, J. H.; Yin, Z. G.; Zhang, L. Q.; Wang, H. L.; Wu, J. L.

    2015-06-01

    We have reported an effective method to enhance the efficiency of graphene-on-Si (Gr/Si) Schottky junction solar cells by co-doping of graphene with Au nanoparticles (NPs) and HNO3. Both Au NPs decoration and HNO3 treatment lead to p-type doping of graphene, and their combination is confirmed to be a more effective approach for achieving the higher work function and enhanced electrical conductivity of graphene. Consequently, the power conversion efficiency of Gr/Si solar cells is increased by 2.6 times, with a maximum value of 10.20%. This work suggests that the co-doping might be a promising way to realize high performance Gr/Si solar cells.

  9. Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

    PubMed

    Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

    2015-09-16

    The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

  10. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    NASA Technical Reports Server (NTRS)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  11. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  12. Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Sah, C. T.

    1977-01-01

    The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

  13. Realizing high-efficiency omnidirectional n-type Si solar cells via the hierarchical architecture concept with radial junctions.

    PubMed

    Wang, Hsin-Ping; Lin, Tzu-Yin; Hsu, Chia-Wei; Tsai, Meng-Lin; Huang, Chih-Hsiung; Wei, Wan-Rou; Huang, Ming-Yi; Chien, Yi-Jiunn; Yang, Po-Chuan; Liu, Chee-Wee; Chou, Li-Jen; He, Jr-Hau

    2013-10-22

    Hierarchical structures combining micropyramids and nanowires with appropriate control of surface carrier recombination represent a class of architectures for radial p-n junction solar cells that synergizes the advantageous features including excellent broad-band, omnidirectional light-harvesting and efficient separation/collection of photoexcited carriers. The heterojunction solar cells fabricated with hierarchical structures exhibit the efficiency of 15.14% using cost-effective as-cut Czochralski n-type Si substrates, which is the highest reported efficiency among all n-type Si nanostructured solar cells. We also demonstrate the omnidirectional solar cell that exhibits the daily generated power enhancement of 44.2% by using hierarchical structures, as compared to conventional micropyramid control cells. The concurrent improvement in optical and electrical properties for realizing high-efficiency omnidirectional solar cells using as-cut Czochralski n-type Si substrates demonstrated here makes a hierarchical architecture concept promising for large-area and cost-effective mass production.

  14. Improved optical transmission and current matching of a triple-junction solar cell utilizing sub-wavelength structures.

    PubMed

    Chiu, M-Y; Chang, C-H; Tsai, M-A; Chang, F-Y; Yu, Peichen

    2010-09-13

    Sub-wavelength antireflective structures are fabricated on a silicon nitride passivation layer of a Ga₀.₅In₀.₅P/GaAs/Ge triple-junction solar cell using polystyrene nanosphere lithography followed by anisotropic etching. The fabricated structures enhance optical transmission in the ultraviolet wavelength range, compared to a conventional single-layer antireflective coating (ARC). The transmission improvement contributes to an enhanced photocurrent, which is also verified by the external quantum efficiency characterization of the fabricated solar cells. Under one-sun illumination, the short-circuit current of a cell with sub-wavelength structures is enhanced by 46.1% and 3.4% due to much improved optical transmission and current matching, compared to cells without an ARC and with a conventional SiN(x) ARC, respectively. Further optimizations of the sub-wavelength structures including the periodicity and etching depth are conducted by performing comprehensive calculations based on a rigorous couple-wave analysis method.

  15. In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

    NASA Technical Reports Server (NTRS)

    Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

    2008-01-01

    The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

  16. Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

    NASA Technical Reports Server (NTRS)

    Luke, K. L.; Cheng, L.-J.

    1986-01-01

    Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

  17. Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

    2002-01-01

    Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

  18. Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

    NASA Technical Reports Server (NTRS)

    Lindholm, Fredrik A.; Liou, Juin J.; Neugroschel, Arnost; Jung, Taewon W.

    1987-01-01

    The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

  19. Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

    NASA Astrophysics Data System (ADS)

    Thomas, T.; Mellor, A.; Hylton, N. P.; Führer, M.; Alonso-Álvarez, D.; Braun, A.; Ekins-Daukes, N. J.; David, J. P. R.; Sweeney, S. J.

    2015-09-01

    Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps (typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be improved by introducing a 1 eV absorber into the stack, either replacing Ge in a triple-junction configuration or on top of Ge in a quad-junction configuration. GaAs0.94Bi0.06 yields a direct-gap at 1 eV with only 0.7% strain on GaAs and the feasibility of the material has been demonstrated from GaAsBi photodetector devices. The relatively high absorption coefficient of GaAsBi suggests sufficient current can be generated to match the sub-cell photocurrent from the other sub-cells of a standard multi-junction solar cell. However, minority carrier transport and background doping levels place constraints on both p/n and p-i-n diode configurations. In the possible case of short minority carrier diffusion lengths we recommend the use of a p-i-n diode, and predict the material parameters that are necessary to achieve high efficiencies in a GaInP/GaAs/GaAsBi/Ge quad-junction cell.

  20. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-01

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  1. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-01

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells. PMID:24452695

  2. Horizontal Silicon Nanowires with Radial p-n Junctions: A Platform for Unconventional Solar Cells.

    PubMed

    Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; Celano, Thomas A; Cahoon, James F

    2013-06-20

    The silicon p-n junction is the most successful solar energy technology to date, yet it accounts for a marginal percentage of worldwide energy production. To change the status quo, a disruptive technological breakthrough is needed. In this Perspective, we discuss the potential for complex silicon nanowires to serve as a platform for next-generation photovoltaic devices. We review the synthesis, electrical characteristics, and optical properties of core/shell silicon nanowires that are subwavelength in diameter and contain radial p-n junctions. We highlight the unique features of these nanowires, such as optical antenna effects that concentrate light and intense built-in electric fields that enable ultrafast charge-carrier separation. We advocate a paradigm in which nanowires are arranged in periodic horizontal arrays to form ultrathin devices. Unlike conventional planar silicon, nanowire structures provide the flexibility to incorporate multiple semiconductor, dielectric, and metallic materials in a single system, providing the foundation for a disruptive, unconventional solar energy technology.

  3. Horizontal Silicon Nanowires with Radial p-n Junctions: A Platform for Unconventional Solar Cells.

    PubMed

    Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; Celano, Thomas A; Cahoon, James F

    2013-06-20

    The silicon p-n junction is the most successful solar energy technology to date, yet it accounts for a marginal percentage of worldwide energy production. To change the status quo, a disruptive technological breakthrough is needed. In this Perspective, we discuss the potential for complex silicon nanowires to serve as a platform for next-generation photovoltaic devices. We review the synthesis, electrical characteristics, and optical properties of core/shell silicon nanowires that are subwavelength in diameter and contain radial p-n junctions. We highlight the unique features of these nanowires, such as optical antenna effects that concentrate light and intense built-in electric fields that enable ultrafast charge-carrier separation. We advocate a paradigm in which nanowires are arranged in periodic horizontal arrays to form ultrathin devices. Unlike conventional planar silicon, nanowire structures provide the flexibility to incorporate multiple semiconductor, dielectric, and metallic materials in a single system, providing the foundation for a disruptive, unconventional solar energy technology. PMID:26283243

  4. Combinatorial solar cell libraries for the investigation of different metal back contacts for TiO2-Cu2O hetero-junction solar cells.

    PubMed

    Rühle, S; Barad, H N; Bouhadana, Y; Keller, D A; Ginsburg, A; Shimanovich, K; Majhi, K; Lovrincic, R; Anderson, A Y; Zaban, A

    2014-04-21

    Here we present a comprehensive investigation of TiO2-Cu2O hetero-junction solar cells with different back contacts (Au, ITO, Cu or Ag). Combinatorial hetero-junction libraries consisting of a linear TiO2 thickness gradient produced by spray pyrolysis and a bell shaped Cu2O profile synthesized by pulsed laser deposition were chosen to investigate the impact of the two metal oxide layer thicknesses. The back contacts were deposited as round patches onto a grid of 13 × 13 points, 169 contacts for each contact material, forming a library containing 4 × 13 × 13 = 676 back contacts. Each back contact represented a solar cell with an individual TiO2 and Cu2O thickness. I-V measurements show that all four materials provide an ohmic contact and that the open circuit voltage of ∼300 mV is rather independent of both layer thicknesses and contact material. The size of the Cu2O crystals drastically decreases with distance from the center of deposition, which leads to a drastic increase of series resistance when the crystal size is <50 nm. PMID:24615619

  5. Combinatorial solar cell libraries for the investigation of different metal back contacts for TiO2-Cu2O hetero-junction solar cells.

    PubMed

    Rühle, S; Barad, H N; Bouhadana, Y; Keller, D A; Ginsburg, A; Shimanovich, K; Majhi, K; Lovrincic, R; Anderson, A Y; Zaban, A

    2014-04-21

    Here we present a comprehensive investigation of TiO2-Cu2O hetero-junction solar cells with different back contacts (Au, ITO, Cu or Ag). Combinatorial hetero-junction libraries consisting of a linear TiO2 thickness gradient produced by spray pyrolysis and a bell shaped Cu2O profile synthesized by pulsed laser deposition were chosen to investigate the impact of the two metal oxide layer thicknesses. The back contacts were deposited as round patches onto a grid of 13 × 13 points, 169 contacts for each contact material, forming a library containing 4 × 13 × 13 = 676 back contacts. Each back contact represented a solar cell with an individual TiO2 and Cu2O thickness. I-V measurements show that all four materials provide an ohmic contact and that the open circuit voltage of ∼300 mV is rather independent of both layer thicknesses and contact material. The size of the Cu2O crystals drastically decreases with distance from the center of deposition, which leads to a drastic increase of series resistance when the crystal size is <50 nm.

  6. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

    SciTech Connect

    Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

    2011-07-01

    Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

  7. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography.

    PubMed

    Hernández-Saz, J; Herrera, M; Delgado, F J; Duguay, S; Philippe, T; Gonzalez, M; Abell, J; Walters, R J; Molina, S I

    2016-07-29

    The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

  8. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

    NASA Astrophysics Data System (ADS)

    Hernández-Saz, J.; Herrera, M.; Delgado, F. J.; Duguay, S.; Philippe, T.; Gonzalez, M.; Abell, J.; Walters, R. J.; Molina, S. I.

    2016-07-01

    The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

  9. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography.

    PubMed

    Hernández-Saz, J; Herrera, M; Delgado, F J; Duguay, S; Philippe, T; Gonzalez, M; Abell, J; Walters, R J; Molina, S I

    2016-07-29

    The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs. PMID:27306098

  10. Effect of annealing and semiconductor nanoparticle incorporation on the performance of hybrid bulk hetero-junction solar cells

    NASA Astrophysics Data System (ADS)

    Truong, Nguyen Tam Nguyen; Park, Chinho; Jung, Jae Hak; Truong, Vu Luan Nguyen; Baik, Sung Sun

    2013-03-01

    Hybrid bulk hetero-junction solar cells were fabricated by blending [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and conjugate poly(3-hexyl thiophene) (P3HT) polymer. The effects of annealing and the incorporation of CdSe nanoparticles (NPs) on the device performance were investigated. Annealing and CdSe NP incorporation increased the charge carrier separation at the PCBM/polymer interface by increasing the short circuit current and efficiency. Thermal annealing of the fabricated cell structure at 140 °C for 5 min was found to be optimal for the device performance, resulting in a maximum power conversion efficiency of 4.2% under AM1.5G simulated solar irradiation.

  11. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.

  12. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    NASA Astrophysics Data System (ADS)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Landini, Barbara; Campman, Ken; Zhang, Yong-Hang

    2014-05-01

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al0.52In0.48P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF2/ZnS anti-reflective coating demonstrated open-circuit voltages (Voc) up to 1.00 V, short-circuit current densities (Jsc) up to 24.5 mA/cm2, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated Jsc and conversion efficiency of these devices are expected to reach 26.6 mA/cm2 and 20.7%, respectively.

  13. A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Sah, C.-T.; Godlewski, M. P.; Brandhorst, H. W., Jr.

    1977-01-01

    An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.

  14. Contorted hexabenzocoronene derivatives enable fullerene-free, semi-transparent solar cells with record-breaking single-junction photovoltage

    NASA Astrophysics Data System (ADS)

    Davy, Nicholas; Sezen, Melda; Loo, Yueh-Lin

    Recent work on tuning the chemical structure of contorted hexabenzocoronene (cHBC) in our group has yielded derivatives with a spectrum of energy levels and absorption profiles, greatly improving the utility of these materials as donor and/or acceptor constituents in organic solar cells. Here, we report planar-heterojunction solar cells comprising an extended heterocyclic cHBC donor and a halogenated cHBC acceptor. By harvesting primarily near-UV light, these devices exhibit a record open-circuit voltage of 1.5 V; this value is higher than any previously reported value for a single-junction organic solar cell. Our active layers are molecularly smooth and pinhole-free; these devices should be scalable to large areas without incurring substantial loss to performance. With a transmittance of 79% across the visible, our devices can be vertically integrated to directly drive the switching of electrochromic windows, where existing prototypes depend on tandem solar cells having near-infrared absorbers.

  15. How tilting and cavity-mode-resonant absorption contribute to light harvesting in 3D radial junction solar cells.

    PubMed

    Lu, Jiawen; Qian, Shengyi; Yu, Zhongwei; Misra, Soumyadeep; Yu, Linwei; Xu, Jun; Shi, Yi; Roca i Cabarrocas, Pere; Chen, Kunji

    2015-09-21

    Radial junction (RJ) architecture has proven beneficial in boosting light harvesting and fast carrier separation in thin film solar cells. While a comprehensive understanding of the detailed absorption distribution and light incoupling mechanism within such a 3D RJ configuration remains largely unexplored. Taking hydrogenated amorphous Si (a-Si:H) RJ solar cells as an example, we here address in both experimental and theoretical manners the impacts of tilting and spacing configuration on the light absorption and external quantum efficiency (EQE) responses. A nice agreement between the calculated and experimental EQE responses indicates that the light harvesting realized within RJ thin film solar cells is quite robust against geometric variations and shadowing effects. Following the concepts of optical fiber injection, we have been able to single out the contribution arising solely from a resonant-mode-incoupling into the RJ cavities against a sidewall scattering incidence scenario. These results provide insightful viewpoints as well as practical guides in developing a new generation of high performance RJ thin film solar cells.

  16. Development of high stable-efficiency, triple-junction a-Si alloy solar cells. Annual subcontract report, July 18, 1994--July 17, 1995

    SciTech Connect

    Deng, X.

    1996-02-01

    This report describes work performed by Energy Conversion Devices, Inc. (ECD) under a 3-year, cost-shared amorphous silicon (a-Si) research program to develop advanced technologies and to demonstrate stable 14%-efficient, triple-junction a-Si alloy solar cells. The technologies developed under the program will then be incorporated into ECD`s continuous roll-to-roll deposition process to further enhance ECD`s photovoltaic manufacturing technology. In ECD`s solar cell design, triple-junction a-Si alloy solar cells are deposited onto stainless-steel substrates coated with Ag/ZnO back-reflector layers. This type of cell design enabled ECD to use a continuous roll- to-roll deposition process to manufacture a-Si PV materials in high volume at low cost. Using this cell design, ECD previously achieved 13.7% initial solar cell efficiency using the following features: (1) a triple-junction, two-band-gap, spectrum-splitting solar cell design; (2) a microcrystalline silicon p-layer; (3) a band-gap-profiled a- SiGe alloy as the bottom cell i-layer; (4) a high-performance AgZnO back-reflector; and (5) a high-performance tunnel junction between component cells. ECD also applied the technology into its 2-MW/yr a- Si production line and achieved the manufacturing of 4-ft{sup 2} PV modules with 8% stable efficiency. During this program, ECD is also further advancing its existing PV technology toward the goal of 14% stable solar cells by performing the following four tasks: (1) improving the stability of the intrinsic a-Si alloy materials; (2) improving the quality of low-band-gap a-SiGe alloy; (3) improving p{sup +} window layers, and (4) developing high stable-efficiency triple-junction a-Si alloy solar cells.

  17. Porous Silicon Modified Photovoltaic Junctions: An Approach to High-Efficiency Solar Cells

    NASA Astrophysics Data System (ADS)

    Badawy, Waheed A.

    2007-02-01

    The solution of the energy problems of our universe is based on the use of the ultimate source of energy, THE SUN, as the main source of useable energy. The trials to obtain solar cells of appropriate efficiency and suitable price represent one of the main tasks of different research groups over the whole world. In this respect silicon represent the main absorber of sun light that could be converted to electricity, photovoltaic cells, or to high energy chemical products, photoelectrochemical cells. Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H2O/C2H5OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide. The oxide films were prepared by the spray/pyrolysis technique which enables the incorporation of foreign atoms like In, Ru or Sb in the oxide film matrix during the spray process/. The incorporation of foreign atoms improves the surface characteristics of the oxide film which leads to the improvement of the fill factor and higher solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (Isc) compared to our improved silicon single crystal solar cells /6/, due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (Voc) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of

  18. Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain

    NASA Astrophysics Data System (ADS)

    Sahin, Gökhan

    The influence of the illumination wavelength on the electrical parameters of a vertical parallel junction silicon solar cell by its rear side is theoretically analyzed. Based on the excess minority carrier's density, the photocurrent density and photovoltage across the junction were determined. From both photocurrent and the photovoltage, the series and shunt resistance expressions are deduced and the solar cell associated capacitance and conversion efficiency are calculated. The aim of this study is to show the influence of the illumination wavelength on the electrical parameters of the cell and the behavior of both parasitic resistances and capacitance versus operating point.

  19. The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

    1979-01-01

    Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

  20. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    SciTech Connect

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  1. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    NASA Astrophysics Data System (ADS)

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Misra, Soumyadeep; Yu, Linwei; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-10-01

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  2. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report

    SciTech Connect

    Deng, X.; Jones, S.J.; Liu, T.; Izu, M.

    1998-04-01

    This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives of establishing a wider process window for the deposition of high-quality p{sup +} materials and further enhancing their performance of a-Si solar cells by improving its p-layers. ECD optimized the deposition of the intrinsic a-Si layer and the boron-doped {mu}c-Si p{sup +} layer to improve the V{sub oc}. Researchers deposited wide-bandgap a-Si films using high hydrogen dilution; investigated the deposition of the ZnO layer (for use in back-reflector) using a sputter deposition process involving metal Zn targets; and obtained a baseline fabrication for single-junction a-Si n-i-p devices with 10.6% initial efficiency and a baseline fabrication for triple-junction a-Si devices with 11.2% initial efficiency. ECD researchers also optimized the deposition parameters for a-SiGe with high Ge content; designed a novel structure for the p-n tunnel junction (recombination layer) in a multiple-junction solar cell; and demonstrated, in n-i-p solar cells, the improved stability of a-Si:H:F materials when deposited using a new fluorine precursor. Researchers investigated the use of c-Si(n{sup +})/a-Si alloy/Pd Schottky barrier device as a tool for the effective evaluation of photovoltaic performance on a-Si alloy materials. Through alterations in the deposition conditions and system hardware, researchers improved their understanding for the deposition of uniform and high-quality a-Si and a-SiGe films over large areas. ECD researchers also performed extensive research to optimize the deposition process of the newly constructed 5-MW back-reflector deposition machine.

  3. Titanium dioxide/zinc indium sulfide hetero-junction: An efficient photoanode for the dye-sensitized solar cell

    NASA Astrophysics Data System (ADS)

    Hou, Wenjing; Xiao, Yaoming; Han, Gaoyi; Zhang, Ying; Chang, Yunzhen

    2016-10-01

    A facile strategy is developed for the fabrication of titanium dioxide/zinc indium sulfide (TiO2/ZnIn2S4) hetero-junction photoanode with an adjustable ZnIn2S4 doping content and application in the dye-sensitized solar cell (DSSC). Comparing to the pure TiO2, TiO2/ZnIn2S4 hetero-junction materials demonstrate an enhanced light utilizing efficiency, a reduced recombination rate of electron-hole pairs, and an accelerated migration process of photoinduced electrons. Due to above merits, DSSC based on TiO2/ZnIn2S4 hetero-junction photoanode achieves a greatly enhanced short-circuit current density, leading to an improved photoelectric conversion efficiency of 8.09% under full sunlight illumination (100 mW cm-2, AM 1.5 G), which is almost 14.43% higher than that of the pure TiO2-based DSSC (7.07%).

  4. An integrated approach to realizing high-performance liquid-junction quantum dot sensitized solar cells

    PubMed Central

    McDaniel, Hunter; Fuke, Nobuhiro; Makarov, Nikolay S.; Pietryga, Jeffrey M.; Klimov, Victor I.

    2013-01-01

    Solution-processed semiconductor quantum dot solar cells offer a path towards both reduced fabrication cost and higher efficiency enabled by novel processes such as hot-electron extraction and carrier multiplication. Here we use a new class of low-cost, low-toxicity CuInSexS2−x quantum dots to demonstrate sensitized solar cells with certified efficiencies exceeding 5%. Among other material and device design improvements studied, use of a methanol-based polysulfide electrolyte results in a particularly dramatic enhancement in photocurrent and reduced series resistance. Despite the high vapour pressure of methanol, the solar cells are stable for months under ambient conditions, which is much longer than any previously reported quantum dot sensitized solar cell. This study demonstrates the large potential of CuInSexS2−x quantum dots as active materials for the realization of low-cost, robust and efficient photovoltaics as well as a platform for investigating various advanced concepts derived from the unique physics of the nanoscale size regime. PMID:24322379

  5. Solar cell

    SciTech Connect

    Frank, R.I.; Kaplow, R.

    1980-08-26

    An improved solar cell designed for optimum efficiency is comprised of a plurality of series connected unit solar cells formed from a common substrate of semiconductor material. Each unit solar cell has spaced elongate sidewalls, and a ''dead space'' area between adjoining sidewalls of adjacent units is made substantially smaller than an active, light receiving area, extending between the opposite sidewalls of each individual unit. In addition, the width of the active area is concisely limited to ensure that radiation incident on the active area is incident at a point which is spaced from the p-n junction of each unit by no more than a predetermined optimum distance. Reducing the ''dead space'' area while concisely limiting the width of the active area provides improved solar cell performance without requiring focusing lenses.

  6. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    SciTech Connect

    Ayra, R.R.; Bennett, M.S.; Dickson, C.R.; Fieselmann, B.; Fortmann, C.; Goldstein, B.; Morris, J.; O'Dowd, J.G.; Oswald, R.S.; Wiedeman, S.; Yang, L. . Thin Film Div.)

    1989-10-01

    This document describes efforts to improve the quality of candidate photovoltaic materials used in amorphous wide- and narrow-band-gap materials, namely, a-Si{sub 1-x}C{sub x} and a-Si{sub 1-x}Ge{sub x}. Although these alloys show a decrease in mobility-lifetime product as the fraction of silicon decreases, their optical properties show marked differences. Microcrystalline p-layer films containing carbon were prepared to evaluate their importance for achieving high open-circuit voltages. Silicon-germanium cells were studied to optimize their performance in multijunction, stacked cell structures. The best cells fabricated from the silicon-germanium alloys yielded a conversion efficiency of 10.1% with a band gap of 1.55 eV. Several alloy-based stacked cells had conversion efficiencies of more than 10%: an a-SiC/a-SiGe cell yielded 10.5% and an a-SiC:H/a-Si:H structure yielded 10.2%. Stacked-junction cells showed far less susceptibility to light-induced degradation.

  7. Reduction of solar cell efficiency by edge defects across the back-surface-field junction - A developed perimeter model

    NASA Technical Reports Server (NTRS)

    Sah, C. T.; Yamakawa, K. A.; Lutwack, R.

    1982-01-01

    Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.

  8. Current-matched, high-efficiency, multi-junction monolithic solar cells

    SciTech Connect

    Olson, J.M.; Kurtz, S.R.

    1991-02-11

    In this invention, the efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga{sub 0.52}In{sub 0.48}P and GaAs. Additional lattice-matched systems to which the invention pertains include Al{sub x}Ga{sub l-x}/GaAs (x=0.3 {minus} 0.4), GaAs/Ge and Ga{sub y}In{sub 1-y}P/Ga{sub y+0.5}In{sub 0.5-{sub Y}} As (O

  9. Comparative Analysis Of Radiation Degradation Of Triple-Junction Solar Cells Using Two Different Approaches

    NASA Astrophysics Data System (ADS)

    Taylor, S.; Chanteperdrix, G.; Evans, H.; Heynderickx, D.; DeDonder, E.; Guillaume, L.; Theroude, C.; Baur, C.

    2011-10-01

    Radiation degradation of solar cells has historically been analysed on the basis of 'relative damage coefficients' using the EQFLUX code developed by NASA/JPL. In recent years, efforts have been made to improve the possibilities for this kind analysis using methods which are more closely similar to the analysis performed on other components. In this paper, we discuss the status of the available tools in the context of the user requirements and expectations.

  10. Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

    NASA Astrophysics Data System (ADS)

    Abolmasov, Sergey; Cabarrocas, Pere Roca i.; Chatterjee, Parsathi

    2016-01-01

    We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μc-SiOx:H layers and a MgF2 ARC.

  11. Charge separation in subcells of triple-junction solar cells revealed by time-resolved photoluminescence spectroscopy.

    PubMed

    Tex, David M; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-11-30

    We measure the excitation-wavelength and power dependence of time-resolved photoluminescence (PL) from the top InGaP subcell in a InGaP/GaAs/Ge triple-junction solar cell. The wavelength-dependent data reveals that the PL decays are governed by charge separation. A fast single-exponential PL decay is observed at low excitation power densities, which is the charge separation under short-circuit condition. Under strong excitation a bi-exponential PL decay is observed. Its slow component appears at early times, followed by a faster component at late times. The slow decay is the carrier recombination of the subcell. The following fast component is the charge separation process under reduced built-in potential near the operating point. The subcells electrical conversion efficiency close to the operating point is evaluated using this decay time constant.

  12. A simulation study of the micro-grooved electrode structure for back-contact back-junction silicon solar cell

    NASA Astrophysics Data System (ADS)

    Zhang, Bo; Yang, Jianfeng

    2015-01-01

    A micro-grooved electrode structure is investigated to illustrate its advantages when applied to the back-contact back-junction (BC-BJ) silicon solar cell. The finite element analysis shows that the micro-grooved electrodes enhances the photo-carrier collection and weakens the dependence of collection ability on pitch distance. The geometries of micro-groove are found to have little impact on the cell performance. These advantages open possibilities for the implementation of low cost fabrication methods. As a demonstration, a process involving laser doping and screen printing techniques are proposed and analyzed. The simulation results show that the laser induced lattice damage causes negligible deterioration of device electrical properties and the presence of parasitic metal insulator semiconductor structure near the screen printed electrodes actually leads to a performance improvement rather than degradation. Our preliminary results indicate that the micro-grooved electrode structure is promising for fabricating low cost high efficiency BC-BJ silicon solar cells.

  13. Finite mobility effects on the radiative efficiency limit of pn -junction solar cells

    NASA Astrophysics Data System (ADS)

    Mattheis, Julian; Werner, Jürgen H.; Rau, Uwe

    2008-02-01

    The maximum power conversion efficiency of a solar cell as defined by the Shockley-Queisser (SQ) radiative recombination limit relies on the assumption that the collection probability for all photogenerated electron/hole pairs is unity. This assumption implies a virtually infinite mobility μn of the photogenerated charge carriers. In order to compute the radiative efficiency limit with finite mobilities, we solve the continuity equation for minority carrier transport including an additional photon recycling term that accounts for emission of photons by radiative recombination and their subsequent reabsorption. This approach quantitatively connects the SQ approach with the classical diode theory. Even when assuming radiative recombination as the only loss mechanism, the maximum efficiency achievable within our model is reduced drastically when μn drops below a critical value. This critical value depends on the absorption coefficient, the doping density of the absorber material, as well as on the thickness and the light trapping scheme of the solar cell. Thus, these material and device parameters gain a fundamental importance as soon as finite carrier mobility is considered. Our theory yields a criterion that has to be fulfilled by any photovoltaic material in order to guarantee charge separation even in an otherwise most ideal case. Exemplary application of our model to three real photovoltaic materials, crystalline silicon (c-Si) , amorphous silicon (a-Si:H) , as well as Cu(In,Ga)Se2 (CIGS), shows that mobilities of c-Si and CIGS are three, respectively, 1 order of magnitude above this critical limit whereas the effective hole mobilities in a-Si:H are scattered around the critical value. A comparison between solar cells and light-emitting diodes with finite mobility and finite nonradiative lifetime reveals that materials for these complementary devices have to fulfill different requirements.

  14. Forward-bias capacitance and current measurements for determining lifetimes and band narrowing in p-n junction solar cells

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Chen, P. J.; Pao, S. C.; Lindholm, F. A.

    1978-01-01

    A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.

  15. Development of 1.25 eV InGaAsN for triple junction solar cells

    SciTech Connect

    LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

  16. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

    SciTech Connect

    Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

    2013-12-21

    We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15 wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15 wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3 nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

  17. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect

    Takamoto, T.; Ikeda, E.; Agui, T.

    1997-12-31

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  18. Systematic investigation of benzodithiophene- and diketopyrrolopyrrole-based low-bandgap polymers designed for single junction and tandem polymer solar cells.

    PubMed

    Dou, Letian; Gao, Jing; Richard, Eric; You, Jingbi; Chen, Chun-Chao; Cha, Kitty C; He, Youjun; Li, Gang; Yang, Yang

    2012-06-20

    The tandem solar cell architecture is an effective way to harvest a broader part of the solar spectrum and make better use of the photonic energy than the single junction cell. Here, we present the design, synthesis, and characterization of a series of new low bandgap polymers specifically for tandem polymer solar cells. These polymers have a backbone based on the benzodithiophene (BDT) and diketopyrrolopyrrole (DPP) units. Alkylthienyl and alkylphenyl moieties were incorporated onto the BDT unit to form BDTT and BDTP units, respectively; a furan moiety was incorporated onto the DPP unit in place of thiophene to form the FDPP unit. Low bandgap polymers (bandgap = 1.4-1.5 eV) were prepared using BDTT, BDTP, FDPP, and DPP units via Stille-coupling polymerization. These structural modifications lead to polymers with different optical, electrochemical, and electronic properties. Single junction solar cells were fabricated, and the polymer:PC(71)BM active layer morphology was optimized by adding 1,8-diiodooctane (DIO) as an additive. In the single-layer photovoltaic device, they showed power conversion efficiencies (PCEs) of 3-6%. When the polymers were applied in tandem solar cells, PCEs over 8% were reached, demonstrating their great potential for high efficiency tandem polymer solar cells. PMID:22640170

  19. Preparation of triple junction a-Si:H nip based solar cells at deposition rates of 10{angstrom}/s using a very high frequency technique

    SciTech Connect

    Jones, S.J.; Deng, X.; Liu, T.; Izu, M.

    1999-07-01

    In an effort to find an alternative deposition method to the standard low deposition rate 13.56 MHz PECVD technique, the feasibility of using a 70 MHz rf plasma frequency to prepare a-Si:H based i-layer materials at high rates for nip based triple-junction solar cells has been tested. As a prelude to multi-junction cell fabrication, the deposition conditions used to make single-junction a-Si:H and a-SiGe:H cells using this Very High Frequency (VHF) method have been varied to optimize the material quality and the cell efficiencies. It was found that the efficiencies and the light stability for both a-Si:H and a-SiGe:H single-junction cells remain relatively constant as the i-layer deposition rate is varied from 1 to 10 {angstrom}/s. Also these stable efficiencies are similar to those for cells made at low deposition rates (1 {angstrom}/s) using the standard 13.56 MHz PECVD technique and the same deposition equipment. Using the knowledge obtained in the fabrication of the single-junction devices, a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cells have been fabricated with all of the i-layers prepared using the VHF technique and deposition rates near 10 {angstrom}/s. Thin doped layers for these devices were prepared using the standard 13.56 MHz rf frequency and deposition rates near 1 {angstrom}/s. Pre-light soaked efficiencies of greater than 10% have been obtained for these cells prepared at the high rates. In addition, after 600 hrs. of light soaking under white light conditions, the cell efficiencies degraded by only 10--13%, values similar to the degree of degradation for high efficiency triple-junction cells made by the standard 13.56 MHz method using i-layer deposition rates near 1 {angstrom}/s. Thus, use of this VHF method in the production of large area a-Si:H based multi-junction solar modules will allow for higher i-layer deposition rates, higher module throughput and reduced module cost.

  20. Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

    SciTech Connect

    Bennett, Mitchell F.; Bittner, Zachary S.; Forbes, David V.; Hubbard, Seth M.; Rao Tatavarti, Sudersena; Wibowo, Andree; Pan, Noren; Chern, Kevin; Phillip Ahrenkiel, S.

    2013-11-18

    InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm{sup 2}.

  1. InP tunnel junctions for InP/InGaAs tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

    1996-01-01

    We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

  2. InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Medelci, N.; Bensaoula, A.; Freundlich, A.; Renaud, P.

    1995-01-01

    We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

  3. Double junction photoelectrochemical solar cells based on Cu2ZnSnS4/Cu2ZnSnSe4 thin film as composite photocathode

    NASA Astrophysics Data System (ADS)

    Zhu, L.; Qiang, Y. H.; Zhao, Y. L.; Gu, X. Q.

    2014-02-01

    A solvothermal method was used to synthesize Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) nanoparticles. CZTS/CZTSe bilayer films have been fabricated via a layer-by-layer blade coating process on the fluorine dope tin oxide (FTO) substrates. We converted conventional dye-sensitized solar cells (DSSCs) into double junction photoelectrochemical solar cells with the replacement of the Pt-coated counter electrode with the as-prepared films as composite photocathodes. Compared with conventional DSSCs, the cells show an increased short circuit current and power conversion efficiency.

  4. Broad spectrum solar cell

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao; Schaff, William J.

    2007-05-15

    An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

  5. Doping evaluation of InP nanowires for tandem junction solar cells

    NASA Astrophysics Data System (ADS)

    Lindelöw, F.; Heurlin, M.; Otnes, G.; Dagytė, V.; Lindgren, D.; Hultin, O.; Storm, K.; Samuelson, L.; Borgström, M.

    2016-02-01

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 1016 cm-3. By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 1019 cm-3, where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  6. Doping evaluation of InP nanowires for tandem junction solar cells.

    PubMed

    Lindelöw, F; Heurlin, M; Otnes, G; Dagytė, V; Lindgren, D; Hultin, O; Storm, K; Samuelson, L; Borgström, M

    2016-02-12

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 10(16) cm(-3). By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 10(19) cm(-3), where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy. PMID:26762762

  7. Low-cost process for P-N junction-type solar cell

    SciTech Connect

    Mooney, J.B.; Cubicciotti, D.D.; Bates, C.W. Jr.

    1980-03-01

    Spray pyrolysis of CuInS/sub 2/ was studied. The concentrations of copper and sulfur in the spray solutions were increased so as to increase the copper content of the films to the stoichiometric level. Although Auger analysis indicates that this was successful, x ray microanalysis has identified the growth of copper-rich crystals on the surfaces of the deposit. Heat treatment in H/sub 2/S did not improve the stoichiometry. The copper-rich crystals were also found on a sample sprayed from a solution with no excess copper. Heterojunctions of glass/SnO/sub 2/(Sb)/CdS/CdTe/carbon(Cu)/Ag-In were prepared with a number of methods used to restrict the junction. The various devices failed to exhibit a diode characteristic or a photo-response. Work on this project is being directed toward understanding the type of junction and how it is formed.

  8. Hole diffusion at the recombination junction of thin film tandem solar cells and its effect on the illuminated current-voltage characteristic

    NASA Astrophysics Data System (ADS)

    Palit, N.; Dasgupta, A.; Ray, S.; Chatterjee, P.

    2000-09-01

    Computer simulation of experimental current density-voltage (J-V) and quantum efficiency characteristics of thin film p1-i1-n1-p2 structures and of double junction solar cells (p1-i1-n1-p2-i2-n2), has been used to understand the hole transport mechanisms near the np "tunnel" junction between two subcells of a multijunction structure. Two different types of p layers at the junction have been studied: (i) hydrogenated microcrystalline silicon (μc-Si:H) and (ii) hydrogenated amorphous silicon carbide (a-SiC:H). There is a striking difference between the experimental J-V characteristics for the p1-i1-n1-p2 structures, with case (i) having a fairly high fill factor (FF) and conversion efficiency (η), as against a very low FF and η in case (ii). Although the difference is much smaller for double junction cells employing these two types of materials as the p layer at the junction, the fill factor of the cell employing μc-Si:H is about 8% higher. Analysis of transport properties as a function of position by computer modeling reveals that the main difference in behavior between the two cases is due to the much higher free hole population in the p layer at the junction when it is microcrystalline; which in turn, is a direct consequence of the lower activation energy for this case. We also learn that not only tunneling and the electric field in the bottom subcell, but also diffusion, plays a major role in pushing the holes produced in it by the incident light towards the recombination layer at the junction; and thereby helps improve cell performance, especially its fill factor. We conclude that the p layer at the junction should have a high free hole density (low activation energy in the device), to attain an overall high fill factor and conversion efficiency. Another interesting inference is the fact that tunneling as transport mechanism for holes towards the junction is more important when the p layer at the junction is a-SiC:H than when it is microcrystalline, while

  9. A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals.

    PubMed

    Liu, Chin-Yi; Kortshagen, Uwe R

    2010-05-20

    Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V.

  10. Cooperative Research between NREL and Solar Junction Corp: Cooperative Research and Development Final Report, CRADA Number CRD-08-306

    SciTech Connect

    Friedman, D.

    2015-03-01

    NREL and Solar Junction Corp. will perform cooperative research on materials and devices that are alternatives to standard approaches with the goal of improving solar cell efficiency while lowering cost. The general purpose of this work is to model the performance of a multi-junction concentrator cell of Solar Junction, Inc. design under normal concentrator operating conditions.

  11. Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

    NASA Astrophysics Data System (ADS)

    Alhomoudi, Ibrahim A.

    2016-06-01

    Metalorganic chemical vapor deposition (MOCVD) has been used for development of photovoltaic (PV) structures that enable enhanced efficiency for triple-junction solar cell (TJSC) devices. The in-plane strain, lattice match, surface defects, surface morphology, compositional uniformity, threading dislocations (TDs), and depth profile of each layer of the TJSC structure have been examined. The heteroepitaxial layers were found to be near lattice matched to the substrate with excellent coherence between the layers. The analysis explained that the indium gallium phosphide (InGaP) and indium gallium arsenide (InGaAs) layers on germanium (Ge) substrate are a strained structure with purely tetragonal crystalline phase, which indicates that the TJSC structural layers could maintain high crystalline quality. The biaxial in-plane strain in each layer of the TJSC structure is compressive and varies in magnitude for each layer in the structure, being strongly influenced by the Ge substrate and the multiple epilayers of the PV structure. Transmission electron microscopy (TEM) results show no TDs observed over a region with area of 500 nm2, with surface defect density less than 1 × 108 cm-2. No evidence of stacking faults and no visible defects of antiphase domains (APDs) at interfaces were observed, indicating adequate nucleation of epitaxial layers on the substrate and on subsequent growth layers. Furthermore, secondary-ion mass spectrometry (SIMS) analysis showed no significant Ge diffusion from the substrate into the TJSC structure.

  12. Conversion efficiency limits and bandgap designs for multi-junction solar cells with internal radiative efficiencies below unity.

    PubMed

    Zhu, Lin; Mochizuki, Toshimitsu; Yoshita, Masahiro; Chen, Shaoqiang; Kim, Changsu; Akiyama, Hidefumi; Kanemitsu, Yoshihiko

    2016-05-16

    We calculated the conversion-efficiency limit ηsc and the optimized subcell bandgap energies of 1 to 5 junction solar cells without and with intermediate reflectors under 1-sun AM1.5G and 1000-sun AM1.5D irradiations, particularly including the impact of internal radiative efficiency (ηint) below unity for realistic subcell materials on the basis of an extended detailed-balance theory. We found that the conversion-efficiency limit ηsc significantly drops when the geometric mean ηint* of all subcell ηint in the stack reduces from 1 to 0.1, and that ηsc degrades linearly to logηint* for ηint* below 0.1. For ηint*<0.1 differences in ηsc due to additional intermediate reflectors became very small if all subcells are optically thick for sun light. We obtained characteristic optimized bandgap energies, which reflect both ηint* decrease and AM1.5 spectral gaps. These results provide realistic efficiency targets and design principles.

  13. Conversion efficiency limits and bandgap designs for multi-junction solar cells with internal radiative efficiencies below unity.

    PubMed

    Zhu, Lin; Mochizuki, Toshimitsu; Yoshita, Masahiro; Chen, Shaoqiang; Kim, Changsu; Akiyama, Hidefumi; Kanemitsu, Yoshihiko

    2016-05-16

    We calculated the conversion-efficiency limit ηsc and the optimized subcell bandgap energies of 1 to 5 junction solar cells without and with intermediate reflectors under 1-sun AM1.5G and 1000-sun AM1.5D irradiations, particularly including the impact of internal radiative efficiency (ηint) below unity for realistic subcell materials on the basis of an extended detailed-balance theory. We found that the conversion-efficiency limit ηsc significantly drops when the geometric mean ηint* of all subcell ηint in the stack reduces from 1 to 0.1, and that ηsc degrades linearly to logηint* for ηint* below 0.1. For ηint*<0.1 differences in ηsc due to additional intermediate reflectors became very small if all subcells are optically thick for sun light. We obtained characteristic optimized bandgap energies, which reflect both ηint* decrease and AM1.5 spectral gaps. These results provide realistic efficiency targets and design principles. PMID:27409948

  14. Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

    NASA Astrophysics Data System (ADS)

    Alhomoudi, Ibrahim A.

    2016-10-01

    Metalorganic chemical vapor deposition (MOCVD) has been used for development of photovoltaic (PV) structures that enable enhanced efficiency for triple-junction solar cell (TJSC) devices. The in-plane strain, lattice match, surface defects, surface morphology, compositional uniformity, threading dislocations (TDs), and depth profile of each layer of the TJSC structure have been examined. The heteroepitaxial layers were found to be near lattice matched to the substrate with excellent coherence between the layers. The analysis explained that the indium gallium phosphide (InGaP) and indium gallium arsenide (InGaAs) layers on germanium (Ge) substrate are a strained structure with purely tetragonal crystalline phase, which indicates that the TJSC structural layers could maintain high crystalline quality. The biaxial in-plane strain in each layer of the TJSC structure is compressive and varies in magnitude for each layer in the structure, being strongly influenced by the Ge substrate and the multiple epilayers of the PV structure. Transmission electron microscopy (TEM) results show no TDs observed over a region with area of 500 nm2, with surface defect density less than 1 × 108 cm-2. No evidence of stacking faults and no visible defects of antiphase domains (APDs) at interfaces were observed, indicating adequate nucleation of epitaxial layers on the substrate and on subsequent growth layers. Furthermore, secondary-ion mass spectrometry (SIMS) analysis showed no significant Ge diffusion from the substrate into the TJSC structure.

  15. ITO@Cu2S tunnel junction nanowire arrays as efficient counter electrode for quantum-dot-sensitized solar cells.

    PubMed

    Jiang, Yan; Zhang, Xing; Ge, Qian-Qing; Yu, Bin-Bin; Zou, Yu-Gang; Jiang, Wen-Jie; Song, Wei-Guo; Wan, Li-Jun; Hu, Jin-Song

    2014-01-01

    Quantum-dot-sensitized solar cell (QDSSC) has been considered as an alternative to new generation photovoltaics, but it still presents very low power conversion efficiency. Besides the continuous effort on improving photoanodes and electrolytes, the focused investigation on charge transfer at interfaces and the rational design for counter electrodes (CEs) are recently receiving much attention. Herein, core-shell nanowire arrays with tin-doped indium oxide (ITO) nanowire core and Cu2S nanocrystal shell (ITO@Cu2S) were dedicatedly designed and fabricated as new efficient CEs for QDSSCs in order to improve charge collection and transport and to avoid the intrinsic issue of copper dissolution in popular and most efficient Cu/Cu2S CEs. The high-quality tunnel junctions formed between n-type ITO nanowires and p-type Cu2S nanocrystals led to the considerable decrease in sheet resistance and charge transfer resistance and thus facilitated the electron transport during the operation of QDSSCs. The three-dimensional structure of nanowire arrays provided high surface area for more active catalytic sites and easy accessibility for an electrolyte. As a result, the power conversion efficiency of QDSSCs with the designed ITO@Cu2S CEs increased by 84.5 and 33.5% compared to that with planar Au and Cu2S CEs, respectively.

  16. A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1991-01-01

    An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3 which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

  17. A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1991-01-01

    An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

  18. On-Orbit Demonstration Of Thin-Film Multi-Junction Solar Cells And Lithium-Ion Capacitors As Bus Components

    NASA Astrophysics Data System (ADS)

    Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Toyota, Hiroyuki; Imaizumi, Mitsuru; Kobayashi, Yuki; Takamoto, Tatsuya; Uno, Masatoshi; Shimada, Takanobu

    2011-10-01

    This paper describes an on-orbit demonstration plan for a lightweight solar panel using thin-film multi-junction (MJ) solar cells and aluminum-laminated lithium-ion capacitors (LICs). Thin-film MJ solar cells such as inverted metamorphic InGaP/GaAs/InGaAs 3J cells have flexibility as well as conversion efficiencies superior to conventional rigid 3J solar cells. A substantial reduction of satellite mass is achieved by the combination of thin-film MJ solar cells and light flexible paddles. An LIC is a hybrid-type capacitor that uses activated carbon as the cathode and carbon material pre-doped with lithium ion as the anode. LICs can be rapidly charged and discharged, and can operate in a wide temperature range for long periods. LICs are therefore suitable for long-term missions such as planetary explorations. Although these devices are very promising, so far there has been no opportunity to demonstrate their use in orbit. A lightweight thin solar panel with thin-film MJ solar cells will be installed on the Small Scientific Satellite Platform for Rapid Investigation and Test-A (SPRINT-A) satellite, which will be launched on the Epsilon launch vehicle in 2013. Utilizing the capacitor-like voltage behavior of LICs, we will employ a simple constant-power charging circuit without feedback control.

  19. Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.

    PubMed

    Shu, G W; Lin, J Y; Jian, H T; Shen, J L; Wang, S C; Chou, C L; Chou, W C; Wu, C H; Chiu, C H; Kuo, H C

    2013-01-14

    Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

  20. Diffused junction p(+)-n solar cells in bulk GaAs. I Fabrication and cell performance

    NASA Technical Reports Server (NTRS)

    Bhat, I.; Bhat, K. N.; Mathur, G.; Borrego, J. M.; Ghandhi, S. K.

    1984-01-01

    This paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.

  1. Commercialization of New Lattice-Matched Multi-Junction Solar Cells Based on Dilute Nitrides: July 8, 2010 - March 7, 2012

    SciTech Connect

    Herb, J.

    2012-04-01

    Final Technical Progress Report for PV Incubator subcontract NAT-0-99013-03. The overall objective of this Incubator subcontract was to complete the work necessary to make commercial ready solar cells using the dilute nitride technology. The specific objectives of this program were aimed at completing the development of a triple-junction solar cell that incorporates a GaInNAs {approx}1eV subcell to the point of commercial readiness, and determining the cell reliability and, if necessary, identifying and eliminating process or material related issues that lead to early-life cell failures. There were three major objectives for Phase 1, each of which focuses on a key element of the solar cell that determines its performance in a commercial CPV system. One objective was to optimize the quality and performance of the key individual components making up the solar cell structure and then to optimize the integration of these components into a complete triple-junction cell. A second objective was to design and test anti-reflective coating that maximizes the light coupled into a 3J cell with a {approx}1 eV bottom cell bandgap. The third objective was to develop Highly Accelerated Life Tests (HALT) protocols and tools for identifying and correcting potential reliability problems. The Phase 2 objectives were a continuation of the work begun in Phase 1 but aimed at optimizing cell performance for commercial requirements. Phase 2 had four primary objectives: (1) develop a glass-matched anti-reflective coating (ARC) and optimize the cell/ARC to give good performance at 60C operating temperature, (2) optimize the cell for good operation at 60C and high concentration, and (3) complete the light biased HALT system and use it to determine what, if any, failures are observed, and (4) determine the reliability limits of the optimized cell.

  2. Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

    2002-01-01

    The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

  3. Thermally stable, low resistance contact systems for use with shallow junction p(+) nn(+) and n(+)pp(+) InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Hoffman, R. W.

    1995-01-01

    Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.

  4. Annealed single-crystal cadmium selenide electrodes in liquid junction solar cells

    NASA Astrophysics Data System (ADS)

    Wessel, S.; Mackintosh, A.; Colbow, K.

    1984-12-01

    I-V characteristics, voltage dependence of the quantum efficiency, and spectral response were compared for annealed single-crystal CdSe photoanodes. Annealing in cadmium atmosphere improved the overall solar response considerably, while annealing under vacuum revealed a poor response for photon energies larger than 1.8 eV and a high quantum efficiency for near-bandgap energies. This behavior may be attributed to electron-hole pair generation from interbandgap states and a large density of minority carrier recombination centers near the crystal surface, owing to a high nonstoichiometry and a selenium layer at the surface. Annealing in selenium atmosphere resulted in very poor solar response caused by compensation. Simultaneous illumination of the electrodes with a He-Ne laser strongly enhanced the quantum efficiency for vacuum-annealed crystals for near-bandgap photons. We attribute this to electron trapping in the selenium-rich surface, with a resulting increase in depletion-layer width in the cadmium selenide.

  5. The distance temperature map as method to analyze the optical properties of Fresnel lenses and their interaction with multi-junction solar cells

    NASA Astrophysics Data System (ADS)

    Hornung, Thorsten; Kiefel, Peter; Nitz, Peter

    2015-09-01

    The optical efficiency of Fresnel lens based solar concentrators varies with the temperature of the Fresnel lens. The dependency of any quantity of interest (e.g. optical efficiency) on Fresnel lens temperature can be visualized by 2d color plots that simultaneously show it as a function of the distance between solar cell and Fresnel lens and as a function of Fresnel lens temperature. This visualization, which is called DTmap, strongly facilitates the analysis of the thermal behavior of a Fresnel lens and the optimization of module height. Based on DTmaps we reveal and discuss serveral details of the thermal behavior of silicone on glass (SOG) Fresnel lenses. In addition, the DTmap is shown for the efficiency of a system consisting of a Fresnel lens and a lattice matched three-junction and a four-junction solar cell. The results demonstrate that the interaction of the concentrator optics and the solar cell is not trivial and may also be studied using DTmaps.

  6. The effect of the optical system on the electrical performance of III-V concentrator triple junction solar cells

    NASA Astrophysics Data System (ADS)

    Schultz, R. D.; van Dyk, E. E.; Vorster, F. J.

    2016-01-01

    High Concentrated Photovoltaic (H-CPV) technologies utilize relatively inexpensive reflective and refractive optical components for concentration to achieve high energy yield. The electrical performance of H-CPV systems is, however, dependent on the properties and configuration of the optical components. The focus of this paper is to summarize the effect of the properties of the optical system on the electrical performance of a Concentrator Triple Junction (CTJ) InGaP/InGaAs/Ge cell. Utilizing carefully designed experiments that include spectral measurements and intensity profiles in the optical plane of the CTJ cell, the influence of photon absorption, Fresnel lens properties and chromatic aberration created by the optical system on the electrical performance of a CTJ cell is shown. From the results obtained, it is concluded that good characterization and understanding of the optical system's properties may add to improved design of future multi-junction devices.

  7. Compound biomimetic structures for efficiency enhancement of Ga(0.5)In(0.5)P/GaAs/Ge triple-junction solar cells.

    PubMed

    Hung, Mu-Min; Han, Hau-Vei; Hong, Chung-Yu; Hong, Kuo-Hsuan; Yang, Tung-Ting; Yu, Peichen; Wu, Yu-Rue; Yeh, Hong-Yih; Huang, Hong-Cheng

    2014-03-10

    Biomimetic nanostructures have shown to enhance the optical absorption of Ga(0.5)In(0.5)P/GaAs/Ge triple junction solar cells due to excellent antireflective (AR) properties that, however, are highly dependent on their geometric dimensions. In practice, it is challenging to control fabrication conditions which produce nanostructures in ideal periodic arrangements and with tapered side-wall profiles, leading to sacrificed AR properties and solar cell performance. In this work, we introduce compound biomimetic nanostructures created by depositing a layer of silicon dioxide (SiO(2)) on top of titanium dioxide (TiO(2)) nanostructures for triple junction solar cells. The device exhibits photogenerated current and power conversion efficiency that are enhanced by ~8.9% and ~6.4%, respectively, after deposition due to their improved antireflection characteristics. We further investigate and verify the optical properties of compound structures via a rigorous coupled wave analysis model. The additional SiO(2) layer not only improves the geometric profile, but also serves as a double-layer dielectric coating. It is concluded that the compound biomimetic nanostructures exhibit superior AR properties that are relatively insensitive to fabrication constraints. Therefore, the compound approach can be widely adopted for versatile optoelectronic devices and applications.

  8. Compound biomimetic structures for efficiency enhancement of Ga₀.₅In₀.₅P/GaAs/Ge triple-junction solar cells.

    PubMed

    Hung, Mu-Min; Han, Hau-Vei; Hong, Chung-Yu; Hong, Kuo-Hsuan; Yang, Tung-Ting; Yu, Peichen; Wu, Yu-Rue; Yeh, Hong-Yih; Huang, Hong-Cheng

    2014-03-10

    Biomimetic nanostructures have shown to enhance the optical absorption of Ga₀.₅In₀.₅P/GaAs/Ge triple junction solar cells due to excellent antireflective (AR) properties that, however, are highly dependent on their geometric dimensions. In practice, it is challenging to control fabrication conditions which produce nanostructures in ideal periodic arrangements and with tapered side-wall profiles, leading to sacrificed AR properties and solar cell performance. In this work, we introduce compound biomimetic nanostructures created by depositing a layer of silicon dioxide (SiO₂) on top of titanium dioxide (TiO₂) nanostructures for triple junction solar cells. The device exhibits photogenerated current and power conversion efficiency that are enhanced by ~8.9% and ~6.4%, respectively, after deposition due to their improved antireflection characteristics. We further investigate and verify the optical properties of compound structures via a rigorous coupled wave analysis model. The additional SiO₂ layer not only improves the geometric profile, but also serves as a double-layer dielectric coating. It is concluded that the compound biomimetic nanostructures exhibit superior AR properties that are relatively insensitive to fabrication constraints. Therefore, the compound approach can be widely adopted for versatile optoelectronic devices and applications.

  9. The behavior of series resistance of a p-n junction: the diode and the solar cell cases

    NASA Astrophysics Data System (ADS)

    Bueno, Poliana H.; Costa, Diogo F.; Eick, Alexander; Carvalho, André; Monteiro, Davies W. L.

    2016-03-01

    This paper presents a comparison of the impact of the internal parasitic series resistance of a p-n junction, as seen from the microelectronics and photovoltaic communities. The elusive thermal behavior of the aforementioned resistance gave this work its origin. Each community uses a different approach to interpret the operational current-voltage behavior of a p-n junction, which might lead to confusion, since scientists and engineers of these two realms seldom interact. An improvement in the understanding of the different approaches will help one to better model the performance of devices based on p-n junctions and therefore it will favor the performance predictions of photovoltaic cells. For diodes, series resistance is usually determined from a specific forward-bias region of the I-V curve on a semi-logarithmic scale. However, in Photovoltaics this region is not commonly reported and therefore other methods to determine Rs are employed. We mathematically modeled an experimentally obtained I-V curve with various pairs of the ideality factor and Rs and found that more than one pair accurately synthesizes the measured curve. We can conclude that the reported series resistance not only depends on physical parameters, e.g. temperature or irradiance, but also on fitting parameters, i.e. the ideality factor. Generally the behavior of a p-n junction depends on its operating conditions and electrical modeling.

  10. Investigation of Junction Properties in CdS/CdTe Solar Cells and Their Correlation to Device Properties: Preprint

    SciTech Connect

    Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

    2008-05-01

    Secondary-ion mass spectrometry analysis of the CdS/CdTe interface shows that S diffusion in CdTe increases with substrate temperature and CdCl2 heat treatment. There is also an accumulation of Cl at the interface for CdCl2-treated samples. Modulated photo-reflectance studies shows that devices with CdCl2 heat treatment and open-circuit voltage (Voc) of 835 mV have a distinct high electric-field region in the layer with bandgap of 1.45 eV. Electron-beam induced current measurements reveal a one-sided junction for high Voc devices. The nature of the junction changes with processing. For heterojunction devices, the depletion region includes the highly defective CdS/CdTe interface, which would increase the recombination current and consequently the dark current, leading to lower Voc. In the case of CdCl2-treated cells, the n+-p junction and its high electric-field results in the junction between structurally compatible CdTe and the Te-rich CdSTe alloy, and thus, in higher Voc.

  11. Investigation of the radiation resistance of triple-junction a-Si:H alloy solar cells irradiated with 1.00 MeV protons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth R., II; Walters, Michael R.; Woodyard, James R.

    1993-01-01

    The effect of 1.00 MeV proton irradiation on hydrogenated amorphous silicon alloy triple-junction solar cells is reported for the first time. The cells were designed for radiation resistance studies and included 0.35 cm(sup 2) active areas on 1.0 by 2.0 cm(sup 2) glass superstrates. Three cells were irradiated through the bottom contact at each of six fluences between 5.10E12 and 1.46E15 cm(sup -2). The effect of the irradiations was determined with light current-voltage measurements. Proton irradiation degraded the cell power densities from 8.0 to 98 percent for the fluences investigated. Annealing irradiated cells at 200 C for two hours restored the power densities to better than 90 percent. The cells exhibited radiation resistances which are superior to cells reported in the literature for fluences less than 1E14 cm(sup -2).

  12. Electrochemically synthesized broadband antireflective and hydrophobic GaOOH nanopillars for III-V InGaP/GaAs/Ge triple-junction solar cell applications.

    PubMed

    Leem, Jung Woo; Lee, Hee Kwan; Jun, Dong-Hwan; Heo, Jonggon; Park, Won-Kyu; Park, Jin-Hong; Yu, Jae Su

    2014-03-10

    We report the efficiency enhancement of III-V InGaP/GaAs/ Ge triple-junction (TJ) solar cells using a novel structure, i.e., vertically-oriented gallium oxide hydroxide (GaOOH) nanopillars (NPs), as an antireflection coating. The optical reflectance properties of rhombus-shaped GaOOH NPs, which were synthesized by a simple, low-cost, and large-scalable electrochemical deposition method, were investigated, together with a theoretical analysis using the rigorous coupled-wave analysis method. For the GaOOH NPs, the solar weighted reflectance of ~8.5% was obtained over a wide wavelength range of 300-1800 nm and their surfaces exhibited a high water contact angle of ~130° (i.e., hydrophobicity). To simply demonstrate the feasibility of device applications, the GaOOH NPs were incorporated into a test-grown InGaP/GaAs/Ge TJ solar cell structure. For the InGaP/GaAs/Ge TJ solar cell with broadband antireflective GaOOH NPs, the conversion efficiency (η) of ~16.47% was obtained, indicating an increased efficiency by 3.47% compared to the bare solar cell (i.e., η~13%).

  13. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    NASA Technical Reports Server (NTRS)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  14. Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

    NASA Technical Reports Server (NTRS)

    Mueller, Robert L.; Anspaugh, Bruce E.

    1993-01-01

    A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

  15. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

    SciTech Connect

    Müller, Ralph Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin

    2014-09-08

    The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

  16. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

    NASA Astrophysics Data System (ADS)

    Müller, Ralph; Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin

    2014-09-01

    The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

  17. Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

    NASA Technical Reports Server (NTRS)

    Li, S. S.; Teng, K. W.; Schoenfeld, D. W.; Rahilly, W. P.

    1982-01-01

    Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

  18. Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell

    NASA Astrophysics Data System (ADS)

    Haixiao, Wang; Xinhe, Zheng; Xingyuan, Gan; Naiming, Wang; Hui, Yang

    2016-01-01

    A reasonably-thick GaNAs/GaInAs superlattice could be an option as a roughly 1 eV subcell to achieve high-efficiency multi-junction solar cells on a lattice-matched Ge substrate. A detailed consideration of a high-efficiency design for a GaInP/GaAs/1 eV/Ge device is presented. Calculations have been done for this structure to obtain the confined energies of the electrons and holes by utilizing the Kronig-Penney model, as well as the absorption coefficient and thereby the external quantum efficiency. The effect of well layers, GaNAs or GaInAs, on the absorption and photocurrent density under the AM 1.5 condition is discussed in order to realize a requirement of current matching in the four-junction solar cells. The management of these considerations implies the feasibility of the GaNAs/GaInAs superlattice subcell design to improve the overall conversion efficiency of lattice matched GaInP/GaAs/1 eV/Ge cells. Project supported by the National Natural Science Foundation of China (No. 61274134) and the International Cooperation Program of Suzhou, China (No. SH201215).

  19. Photovoltaic solar cell

    SciTech Connect

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2015-09-08

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  20. Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx

    NASA Astrophysics Data System (ADS)

    Chung, Chen-Chen; Lo, Hsiao-Chieh; Lin, Yen-Ku; Yu, Hung-Wei; Tinh Tran, Binh; Lin, Kung-Liang; Chen, Yung Chang; Quan, Nguyen-Hong; Chang, Edward Yi; Tseng, Yuan-Chieh

    2015-05-01

    This work reports a fabrication strategy to improve the antireflective ability of a InGaP/GaAs/Ge triple-junction solar cell, by combining a nano-templating technique and a chemical-synthesis approach. SiH4 and N2 were used as ammonia-free reaction gases in a plasma-enhanced chemical vapor deposition (PECVD) to prepare Si3N4 as an original antireflective coating (ARC) layer with better chemical stability. Composition-graded SiNx was successfully integrated with sub-wavelength structure by modulating SiH4/N2 ratio during PECVD deposition, and followed by a controllable gold-nanoparticle masking technique on top of the solar cell. Finite-difference time-domain solution was employed to simulate and optimize the aspect-ratio of the ARC, under the condition of variable refractive index over a broad wavelength window, and followed by the masking technique to obtain the desired ARC dimension. This enabled a low light reflectance (<10%) over a broad spectral bandwidth (300-1800 nm) for the solar cell with excellent stability, because of the triple advantages of structural optimization, better chemical stability and graded refractive index of the ARC. The solar cell’s performance was tested and showed great competitiveness to those of forefront studies, suggesting the feasibility of the proposed technology.

  1. The electronic structure of metal oxide/organo metal halide perovskite junctions in perovskite based solar cells

    PubMed Central

    Dymshits, Alex; Henning, Alex; Segev, Gideon; Rosenwaks, Yossi; Etgar, Lioz

    2015-01-01

    Cross-sections of a hole-conductor-free CH3NH3PbI3 perovskite solar cell were characterized with Kelvin probe force microscopy. A depletion region width of about 45 nm was determined from the measured potential profiles at the interface between CH3NH3PbI3 and nanocrystalline TiO2, whereas a negligible depletion was measured at the CH3NH3PbI3/Al2O3 interface. A complete solar cell can be realized with the CH3NH3PbI3 that functions both as light harvester and hole conductor in combination with a metal oxide. The band diagrams were estimated from the measured potential profile at the interfaces, and are critical findings for a better understanding and further improvement of perovskite based solar cells. PMID:25731963

  2. Nanorainforest solar cells based on multi-junction hierarchical p-Si/n-CdS/n-ZnO nanoheterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Zhao, Qing; Laurent, Kevin; Leprince-Wang, Y.; Liao, Zhi-Min; Yu, Dapeng

    2011-12-01

    Solar cells based on one-dimensional nanostructures have recently emerged as one of the most promising candidates to achieve high-efficiency solar energy conversion due to their reduced optical reflection, enhanced light absorption, and enhanced carrier collection. In nature, the rainforest, consisting of several stereo layers of vegetation, is the highest solar-energy-using ecosystem. Herein, we gave an imitation of the rainforest configuration in nanostructure-based solar cell design. Novel multi-layer nanorainforest solar cells based on p-Si nanopillar array/n-CdS nanoparticles/n-ZnO nanowire array heterostructures were achieved via a highly accessible, reproducible and controllable fabrication process. By choosing materials with appropriate bandgaps, an efficient light absorption and enhanced light harvesting were achieved due to the wide range of the solar spectrum covered. Si nanopillar arrays were introduced as direct conduction pathways for photon-generated charges' efficient collection and transport. The unique strategy using PMMA as a void-filling material to obtain a continuous, uniform and low resistance front electrode has significantly improved the overall light conversion efficiency by two orders of magnitude. These results demonstrate that nanorainforest solar cells, along with wafer-scale, low-cost and easily controlled processing, open up substantial opportunities for nanostructure photovoltaic devices.Solar cells based on one-dimensional nanostructures have recently emerged as one of the most promising candidates to achieve high-efficiency solar energy conversion due to their reduced optical reflection, enhanced light absorption, and enhanced carrier collection. In nature, the rainforest, consisting of several stereo layers of vegetation, is the highest solar-energy-using ecosystem. Herein, we gave an imitation of the rainforest configuration in nanostructure-based solar cell design. Novel multi-layer nanorainforest solar cells based on p

  3. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

    2014-05-20

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  4. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  5. Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations

    SciTech Connect

    Zhai, Xiongfei; Cao, Guoyang; Wu, Shaolong E-mail: xfli@suda.edu.cn; Shang, Aixue; Li, Xiaofeng E-mail: xfli@suda.edu.cn

    2015-11-02

    Detailed balance calculations are presented for a-Si:H/μc-Si:H-based single- and tandem-junction single-nanowire solar cells (S- and T-SNSCs). Our study is based on three-dimensional finite-element electromagnetic simulation and thermodynamic balanced analysis, which includes radiative and Auger recombinations simultaneously. We quantify and compare the limiting short-circuit current densities, open-circuit voltages, and light-conversion efficiencies of these highly compact photovoltaic cells, addressing especially the effect of Auger recombination on the open-circuit voltages of SNSCs. Results show that tandem design leads to much higher light-conversion capability than μc-Si:H S-SNSCs, but exhibits superior performance than a-Si:H S-SNSCs only for cells with large radii.

  6. Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations

    NASA Astrophysics Data System (ADS)

    Zhai, Xiongfei; Cao, Guoyang; Wu, Shaolong; Shang, Aixue; Li, Xiaofeng

    2015-11-01

    Detailed balance calculations are presented for a-Si:H/μc-Si:H-based single- and tandem-junction single-nanowire solar cells (S- and T-SNSCs). Our study is based on three-dimensional finite-element electromagnetic simulation and thermodynamic balanced analysis, which includes radiative and Auger recombinations simultaneously. We quantify and compare the limiting short-circuit current densities, open-circuit voltages, and light-conversion efficiencies of these highly compact photovoltaic cells, addressing especially the effect of Auger recombination on the open-circuit voltages of SNSCs. Results show that tandem design leads to much higher light-conversion capability than μc-Si:H S-SNSCs, but exhibits superior performance than a-Si:H S-SNSCs only for cells with large radii.

  7. Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Pallarès, J.; Schropp, R. E. I.

    2000-07-01

    We fabricated pn and pin a-SiC:H/c-Si heterojunction solar cells following two different processes. In the first approach, wafers were subjected to an extra atomic hydrogen (produced by hot wire chemical vapor deposition) prior to the deposition of the amorphous layer. A reduction in the open-circuit voltage was observed for the passivated cells due to their higher leakage current. In the second process, pin solar cells with two different quality intrinsic a-Si:H buffer layers were fabricated using plasma enhanced chemical vapor deposition. The cells with a device quality buffer layer (deposited at higher temperature) showed better performance than those with a buffer layer with high hydrogen content and higher defect density (deposited at lower temperatures).

  8. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  9. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect

    Masuda, T; Tomasulo, S; Lang, JR; Lee, ML

    2015-03-07

    We have investigated similar to 2.0 eV (AlxGa1-x)(0.51)In0.49P and similar to 1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (AlxGa1-x)(0.51)In0.49P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V-oc) ranging from 1.29 to 1.30 V for Ga0.51In0.49P cells, and 1.35-1.37 V for (AlxGa1-x)(0.51)In0.49P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W-oc = E-g/q - V-oc) of Ga0.51In0.49P cells to decrease from similar to 575 mV to similar to 565 mV, while that of (AlxGa1-x)(0.51)In0.49P cells remained nearly constant at 620 mV. The constant Woc as a function of substrate offcut for (AlxGa1-x)(0.51)In0.49P implies greater losses from non-radiative recombination compared with the Ga0.51In0.49P devices. In addition to larger Woc values, the (AlxGa1-x)(0.51)In0.49P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga0.51In0.49P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (AlxGa1-x)(0.51)In0.49P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells. (C) 2015 AIP Publishing LLC.

  10. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

    SciTech Connect

    Atwater, H. A.

    2008-11-01

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

  11. Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)

    SciTech Connect

    Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

    2008-05-01

    The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

  12. Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

    NASA Astrophysics Data System (ADS)

    Kewei, Cao; Tong, Liu; Jingming, Liu; Hui, Xie; Dongyan, Tao; Youwen, Zhao; Zhiyuan, Dong; Feng, Hui

    2016-06-01

    Low dislocation density Ge wafers grown by a vertical gradient freeze (VGF) method used for the fabrication of multi-junction photovoltaic cells (MJC) have been studied by a whole wafer scale measurement of the lattice parameter, X-ray rocking curves, etch pit density (EPD), impurities concentration, minority carrier lifetime and residual stress. Impurity content in the VGF-Ge wafers, including that of B, is quite low although B2O3 encapsulation is used in the growth process. An obvious difference exists across the whole wafer regarding the distribution of etch pit density, lattice parameter, full width at half maximum (FWHM) of the X-ray rocking curve and residual stress measured by Raman spectra. These are in contrast to a reference Ge substrate wafer grown by the Cz method. The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters. Project supported by the National Natural Science Foundation of China (No. 61474104).

  13. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    NASA Technical Reports Server (NTRS)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  14. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

    NASA Astrophysics Data System (ADS)

    Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

    2010-10-01

    The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

  15. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

    SciTech Connect

    Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

    2010-10-14

    The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

  16. Cadmium-free junction fabrication process for CuInSe{sub 2} thin film solar cells

    SciTech Connect

    Ramanathan, K.V.; Contreras, M.A.; Bhattacharya, R.N.; Keane, J.; Noufi, R.

    1999-09-07

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  17. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

    DOEpatents

    Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

    1999-01-01

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  18. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.

    1993-01-01

    Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

  19. Superstrate sub-cell voltage-matched multijunction solar cells

    DOEpatents

    Mascarenhas, Angelo; Alberi, Kirstin

    2016-03-15

    Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

  20. Thin, Lightweight Solar Cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  1. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986

    SciTech Connect

    Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

    1988-09-01

    This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

  2. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect

    Masuda, Taizo Tomasulo, Stephanie; Lang, Jordan R.; Lee, Minjoo Larry

    2015-03-07

    We have investigated ∼2.0 eV (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P and ∼1.9 eV Ga{sub 0.51}In{sub 0.49}P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V{sub oc}) ranging from 1.29 to 1.30 V for Ga{sub 0.51}In{sub 0.49}P cells, and 1.35–1.37 V for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W{sub oc} = E{sub g}/q − V{sub oc}) of Ga{sub 0.51}In{sub 0.49}P cells to decrease from ∼575 mV to ∼565 mV, while that of (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells remained nearly constant at 620 mV. The constant W{sub oc} as a function of substrate offcut for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P implies greater losses from non-radiative recombination compared with the Ga{sub 0.51}In{sub 0.49}P devices. In addition to larger W{sub oc} values, the (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga{sub 0.51}In{sub 0.49}P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells.

  3. Theory of back-surface-field solar cells

    NASA Technical Reports Server (NTRS)

    Vonroos, O.

    1979-01-01

    Report describes simple concise theory of back-surface-field (BSF) solar cells (npp + junctions) based on Shockley's depletion-layer approximation and cites superiority of two-junction devices over conventional unijunction cells.

  4. InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

    NASA Technical Reports Server (NTRS)

    Wanlaas, M. W.; Gessert, T. A.; Horner, G. S.; Emery, K. A.; Coutts, T. J.

    1991-01-01

    The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed.

  5. Development and characterization of high-efficiency Ga{sub 0.5}In{sub 0.5}P/GaAs/Ge dual- and triple-junction solar cells

    SciTech Connect

    Karam, N.H.; King, R.R.; Cavicchi, B.T.

    1999-10-01

    This paper describes recent progress in the characterization, analysis, and development of high-efficiency, radiation-resistant Ga{sub 0.5}In{sub 0.5}P/GaAs/Ge dual-junction (DJ) and triple-junction (TJ) solar cells. DJ cells have rapidly transitioned from the laboratory to full-scale (325 kW/year) production at Spectrolab. Performance data for over 470,000 large-area (26.94 cm{sup 2}), thin (140 {micro}m) DJ solar cells grown on low-cost, high-strength Ge substrates are shown. Advances in next-generation triple-junction Ga{sub 0.5}In{sub 0.5}P/GaAs/Ge cells with an active Ge component cell are discussed, giving efficiencies up to 26.7% (21.65-cm{sup 2} area), AM0, at 28 C. Final-to-final power ratios P/P{sub 0} of 0.83 were measured for these n-on-p DJ and TJ cells after irradiation with 10{sup 15} 1-MeV electrons/cm{sup 2}. Time-resolved photoluminescence measurements are applied to double heterostructures grown with semiconductor layers and interfaces relevant to these multifunction solar cells, to characterize surface and bulk recombination and guide further device improvements. Dual-and triple-junction Ga{sub 0.5}In{sub 0.5}P/GaAs/Ge cells are compared to competing space photovoltaic technologies, and found to offer 60--75% more end-of-life power than high-efficiency Si cells at a nominal array temperature of 60 C.

  6. Dependence of photovoltages of spray-deposited indium tin oxide/silicon oxide/silicon junction solar cells on spray solvents

    NASA Astrophysics Data System (ADS)

    Ishida, T.; Kouno, H.; Kobayashi, H.; Nakato, Y.

    1994-05-01

    The photovoltages of spray-deposited indium tin oxide/silicon oxide/n-Si junction solar cells are found to depend strongly on the spray solvents such as methanol, ethanol, ethyl acetate, water, etc. It is also found that the work function of the indium tin oxide (ITO) films is dependent on the spray solvents, and the higher the work function of the ITO films, the larger the photovoltage. X-ray photoelectron spectroscopy (XPS) measurements indicate that an In-OH species, probably formed by reactions of the ITO film with the spray solvents, is present in the deposited film in cases where its work function is high. The resistivity of the ITO films produced using the organic spray solvents is in the range of 2 approx. 4 x 10(sup -4) Omega cm, leading to high fill factors of the solar cells, while that of the films deposited using water as a spray solvent is as high as 1.2 x 10(sup -3) Omega cm, resulting in low fill factors. On the basis of the XPS measurements, the high resistivity of the latter ITO films is attributed to a small amount of tin ions in the films. X-raydiffraction measurements show that the crystal orientation of the ITO films also depends on the spray solvents, indicating that the film formation mechanism varies with the spray solvents. By use of a mixed solvent of methanol:ethyl acetate:water = 5:5:1, the photovoltage becomes the highest, and the conversion efficiency of 14% is achieved.

  7. Solar Cells

    NASA Technical Reports Server (NTRS)

    1983-01-01

    The Heat Exchanger Method (HEM) produces high efficiency crystal ingots in an automated well-insulated furnace offering low equipment, labor and energy costs. The "grown" silicon crystals are used to make solar cells, or photovoltaic cells which convert sunlight directly into electricity. The HEM method is used by Crystal Systems, Inc. and was developed under a NASA/Jet Propulsion Laboratory contract. The square wafers which are the result of the process are sold to companies manufacturing solar panels.

  8. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    NASA Technical Reports Server (NTRS)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  9. Report on Project to Characterize Multi-Junction Solar Cells in the Stratosphere using Low-Cost Balloon and Communication Technologies

    NASA Astrophysics Data System (ADS)

    Mirza, Ali; Sant, David; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

    2002-10-01

    Balloon, control and communication technologies are under development in our laboratory for testing multi-junction solar cells in the stratosphere to achieve near AM0 conditions. One flight, Suntracker I, has been carried out reported earlier. We report on our efforts in preparation for a second flight, Suntracker II, that was aborted due to hardware problems. The package for Suntracker I system has been modified to include separate electronics and battery packs for the 70 centimeter and 2 meter systems. The collimator control system and motor gearboxes have been redesigned to address problems with the virtual stops and backlash. Surface mount technology on a printed circuit board was used in place of the through-hole prototype circuit in efforts to reduce weight and size, and improve reliability. A mobile base station has been constructed that includes a 35' tower with a two axis rotator and multi-element yagi antennas. Modifications in Suntracker I and the factors that lead to aborting Suntracker II are discussed.

  10. Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

    NASA Technical Reports Server (NTRS)

    Lord, Kenneth; Woodyard, James R.

    2002-01-01

    The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

  11. Report on Project to Characterize Multi-Junction Solar Cells in the Stratosphere using Low-Cost Balloon and Communication Technologies

    NASA Technical Reports Server (NTRS)

    Mirza, Ali; Sant, David; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

    2002-01-01

    Balloon, control and communication technologies are under development in our laboratory for testing multi-junction solar cells in the stratosphere to achieve near AM0 conditions. One flight, Suntracker I, has been carried out reported earlier. We report on our efforts in preparation for a second flight, Suntracker II, that was aborted due to hardware problems. The package for Suntracker I system has been modified to include separate electronics and battery packs for the 70 centimeter and 2 meter systems. The collimator control system and motor gearboxes have been redesigned to address problems with the virtual stops and backlash. Surface mount technology on a printed circuit board was used in place of the through-hole prototype circuit in efforts to reduce weight and size, and improve reliability. A mobile base station has been constructed that includes a 35' tower with a two axis rotator and multi-element yagi antennas. Modifications in Suntracker I and the factors that lead to aborting Suntracker II are discussed.

  12. Cadmium sulfide solar cells

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.

    1975-01-01

    Development, fabrication and applications of CdS solar cells are reviewed in detail. The suitability of CdS cells for large solar panels and microcircuitry, and their low cost, are emphasized. Developments are reviewed by manufacturer-developer. Vapor phase deposition of thin-film solar cells, doping and co-evaporation, sputtering, chemical spray, and sintered layers are reviewed, in addition to spray deposition, monograin layer structures, and silk screening. Formation of junctions by electroplating, evaporation, brushing, CuCl dip, and chemiplating are discussed, along with counterelectrode fabrication, VPD film structures, the Cu2S barrier layer, and various photovoltaic effects (contact photovoltage, light intensity variation, optical enhancement), and various other CdS topics.

  13. Design of periodic nano- and macro-scale textures for high-performance thin-film multi-junction solar cells

    NASA Astrophysics Data System (ADS)

    Krc, J.; Sever, M.; Kovacic, M.; Moulin, E.; Campa, A.; Lipovsek, B.; Steltenpool, M.; van Erven, A. J. M.; Haug, F.-J.; Ballif, C.; Topic, M.

    2016-06-01

    Surface textures in thin-film silicon multi-junction solar cells play an important role in gaining the photocurrent of the devices. In this paper, a design of the textures is carried out for the case of amorphous silicon/micro-crystalline silicon (a-Si:H/μc-Si:H) solar cells, employing advanced modelling to determine the textures for defect-free silicon layer growth and to increase the photocurrent. A model of non-conformal layer growth and a hybrid optical modelling approach are used to perform realistic 3D simulations of the structures. The hybrid optical modelling includes rigorous modelling based on the finite element method and geometrical optics models. This enables us to examine the surface texture scaling from nano- to macro-sized (several tens or hundreds of micrometers) texturisation features. First, selected random and periodic nanotextures are examined with respect to critical positions of defect-region formation in Si layers. We show that despite careful selection of a well-suited semi-ellipsoidal periodic texture for defect-free layer growth, defective regions in Si layers of a-Si:H/μc-Si:H cell cannot be avoided if the lateral and vertical dimensions of the nano features are optimised only for high gain in photocurrent. Macro features are favourable for defect-free layer growth, but do not render the photocurrent gains as achieved with light-scattering properties of the optimised nanotextures. Simulation results show that from the optical point of view the semi-ellipsoidal periodic nanotextures with lateral features smaller than 0.4 μm and vertical peak-to-peak heights around or above 0.3 μm are required to achieve a gain in short-circuit current of the top cell with respect to the state-of-the-art random texture (>16% increase), whereas lateral dimensions around 0.8 μm and heights around 0.6 μm lead to a >6% gain in short-circuit current of the bottom cell.

  14. Module level solutions to solar cell polarization

    DOEpatents

    Xavier, Grace , Li; Bo

    2012-05-29

    A solar cell module includes interconnected solar cells, a transparent cover over the front sides of the solar cells, and a backsheet on the backsides of the solar cells. The solar cell module includes an electrical insulator between the transparent cover and the front sides of the solar cells. An encapsulant protectively packages the solar cells. To prevent polarization, the insulator has resistance suitable to prevent charge from leaking from the front sides of the solar cells to other portions of the solar cell module by way of the transparent cover. The insulator may be attached (e.g., by coating) directly on an underside of the transparent cover or be a separate layer formed between layers of the encapsulant. The solar cells may be back junction solar cells.

  15. Solar cell circuit and method for manufacturing solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, Nick (Inventor)

    2010-01-01

    The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

  16. Epitaxial solar cells fabrication

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1975-01-01

    Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

  17. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase 2 Semiannual subcontract report, 1 February 1985--31 July 1985

    SciTech Connect

    Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.W.; D'Aiello, R.V.; Dickson, C.R.; Newton, J.L.; O'Dowd, J.G.; Oswald, R.S.

    1988-09-01

    This report presents results of the second phase of research in high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. Strong correlations were found between the breakdown voltage, the deposition rate, and the diffusion length for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition using either tetramethyl tine (TMT) or tin tetrachloride (TTC). The best films were grown with TMT, but those grown with TTC had a more controlled texture for light trapping and provided a better contact to the p-layer. Tests indicated that Ti/Al provides a stable, low-resistance back metal contact. Efficiencies of more than 10% were obtained with a p-i-n structure in which a thin, undoped a-Si:C:H layer is first deposited on the tin-oxide-coated glass. The stability of a-Si:H cells was improved by light doping of the i-layer, but the doping also caused a loss in initial performance. A new baseline submodule was designed and an active-area (350 cmS) efficiency of 6.7% was obtained. An active-area (82.5 cmS) efficiency of 6.7% was also obtained with laser scribing techniques. 7 refs., 31 figs., 7 tabs.

  18. Downregulation of gap junctions in cancer cells.

    PubMed

    Leithe, Edward; Sirnes, Solveig; Omori, Yasufumi; Rivedal, Edgar

    2006-12-01

    Gap junctions are intercellular plasma membrane domains enriched in channels that allow direct exchange of ions and small molecules between adjacent cells. Gap junction channels are composed of a family of transmembrane proteins called connexin. Connexins play important roles in the regulation of cell growth and differentiation. Cancer cells usually have downregulated levels of gap junctions, and several lines of evidence suggest that loss of gap junctional intercellular communication is an important step in carcinogenesis. In support of this hypothesis are studies showing that reexpression of connexins in cancer cells causes normalization of cell growth control and reduced tumor growth. To gain a more detailed understanding of the role of connexins as tumor suppressors, a clearer picture of the mechanisms involved in loss of gap junctions in cancer cells is needed. Furthermore, defining the mechanisms involved in downregulation of connexins in carcinogenesis will be an important step toward utilizing the potential of connexins as targets in cancer prevention and therapy. Various mechanisms are involved in the loss of gap junctions in cancer cells, ranging from loss of connexin gene transcription to aberrant trafficking of connexin proteins. This review will discuss our current knowledge on the molecular mechanisms involved in the downregulation of gap junctions in cancer cells. PMID:17425504

  19. Nighttime solar cell

    SciTech Connect

    Parise, R.J.

    1998-07-01

    Currently photovoltaic (PV) cells convert solar energy into electrical energy at an efficiency of about 18%, with the maximum conversion rate taking place around noon on a cloudless day. In many applications, the PV cells are utilized to recharge a stand-by battery pack that provides electrical energy at night or on cloudy days. Increasing the utilization of the panel array area by producing electrical power at night will reduce the amount of required electrical energy storage for a given array size and increase system reliability. Thermoelectric generators (TEG) are solid state devices that convert thermal energy into electrical energy. Using the nighttime sky, or deep space, with an effective temperature of 3.5 K as a cold sink, the TEG presented here can produce electrical power at night. The hot junction is supplied energy by the ambient air temperature or some other warm temperature source. The cold junction of the TEG is insulated from the surroundings by a vacuum cell, improving its overall effectiveness. Combining the TEG with the PV cell, a unique solid state device is developed that converts electromagnetic radiant energy into usable electrical energy. The thermoelectric-photovoltaic (TEPV) cell, or the Nighttime Solar Cell, is a direct energy conversion device that produces electrical energy both at night and during the day.

  20. High efficiency solar cell research for space applications

    NASA Technical Reports Server (NTRS)

    Flood, D. J.

    1985-01-01

    A review is given of NASA photovoltaic research with emphasis on the activities of the Lewis Research Center. High efficiency solar cell research is discussed, as well as solar arrays, multi-junction cell bandgaps, and plasmon coupling.

  1. Solar cells

    NASA Astrophysics Data System (ADS)

    Treble, F. C.

    1980-11-01

    The history, state of the art, and future prospects of solar cells are reviewed. Solar cells are already competitive in a wide range of low-power applications, and during the 1980's they are expected to become cheaper to run than diesel or gasoline generators, the present mainstay of isolated communities. At this stage they will become attractive for water pumping, irrigation, and rural electrification, particularly in developing countries. With further cost reduction, they may be used to augment grid supplies in domestic, commercial, institutional, and industrial premises. Cost reduction to the stage where photovoltaics becomes economic for large-scale power generation in central stations depends on a technological breakthrough in the development of thin-film cells. DOE aims to reach this goal by 1990, so that by the end of the century about 20% of the estimated annual additions to their electrical generating capacity will be photovoltaic.

  2. Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

    DOEpatents

    Yang, Liyou; Chen, Liangfan

    1998-03-24

    Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

  3. Energy level alignment in polymer organic solar cells at donor-acceptor planar junction formed by electrospray vacuum deposition

    SciTech Connect

    Kim, Ji-Hoon; Hong, Jong-Am; Kwon, Dae-Gyeon; Seo, Jaewon; Park, Yongsup

    2014-04-21

    Using ultraviolet photoelectron spectroscopy (UPS), we have measured the energy level offset at the planar interface between poly(3-hexylthiophene) (P3HT) and C{sub 61}-butyric acid methylester (PCBM). Gradual deposition of PCBM onto spin-coated P3HT in high vacuum was made possible by using electrospray vacuum deposition (EVD). The UPS measurement of EVD-prepared planar interface resulted in the energy level offset of 0.91 eV between P3HT HOMO and PCBM LUMO, which is considered as the upper limit of V{sub oc} of the organic photovoltaic cells.

  4. Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

    NASA Astrophysics Data System (ADS)

    Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

    2016-07-01

    We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

  5. Screen printed interdigitated back contact solar cell

    NASA Astrophysics Data System (ADS)

    Baraona, C. R.; Mazaris, G. A.; Chai, A. T.

    1984-10-01

    Interdigitated back contact solar cells are made by screen printing dopant materials onto the back surface of a semiconductor substrate in a pair of interdigitated patterns. These dopant materials are then diffused into the substrate to form junctions having configurations corresponding to these patterns. Contacts having configurations which match the patterns are then applied over the junctions.

  6. Screen printed interdigitated back contact solar cell

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.; Mazaris, G. A.; Chai, A. T. (Inventor)

    1984-01-01

    Interdigitated back contact solar cells are made by screen printing dopant materials onto the back surface of a semiconductor substrate in a pair of interdigitated patterns. These dopant materials are then diffused into the substrate to form junctions having configurations corresponding to these patterns. Contacts having configurations which match the patterns are then applied over the junctions.

  7. Multiple Exciton Generation Solar Cells

    SciTech Connect

    Luther, J. M.; Semonin, O. E.; Beard, M. C.; Gao, J.; Nozik, A. J.

    2012-01-01

    Heat loss is the major factor limiting traditional single junction solar cells to a theoretical efficiency of 32%. Multiple Exciton Generation (MEG) enables efficient use of the solar spectrum yielding a theoretical power conversion efficiency of 44% in solar cells under 1-sun conditions. Quantum-confined semiconductors have demonstrated the ability to generate multiple carriers but present-day materials deliver efficiencies far below the SQ limit of 32%. Semiconductor quantum dots of PbSe and PbS provide an active testbed for developing high-efficiency, inexpensive solar cells benefitting from quantum confinement effects. Here, we will present recent work of solar cells employing MEG to yield external quantum efficiencies exceeding 100%.

  8. Silicon solar cell fabrication technology

    NASA Technical Reports Server (NTRS)

    Stafsudd, O. M.

    1979-01-01

    The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied.

  9. Silicon MINP solar cells

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.; Addis, F. W.; Miller, W. A.

    1985-01-01

    The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

  10. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1992-01-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  11. New high-efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Daud, T.; Crotty, G. T.

    1985-01-01

    A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

  12. A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

    NASA Astrophysics Data System (ADS)

    Halim, Mohammad Abdul; Islam, Muhammad Monirul; Luo, Xianjia; Sakurai, Takeaki; Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki; Tampo, Hitoshi; Shibata, Hajime; Niki, Shigeru; Akimoto, Katsuhiro

    2016-03-01

    A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  13. Optimization of Phase-Engineered a-Si:H-Based Multi-Junction Solar Cells: Final Technical Report, October 2001-July 2005

    SciTech Connect

    Wronski, C. R.; Collins, R. W.; Podraza, N. J.; Vlahos, V.; Pearce, J. M.; Deng, J.; Albert, M.; Ferreira, G. M.; Chen, C.

    2006-08-01

    The scope of the work under this subcontract has involved investigating engineered improvements in the performance and stability of solar cells in a systematic way, which included the following four tasks: (1) Materials research and device development; (2) Process improvement directed by real time diagnostics; (3) Device loss mechanisms; and (4) Characterization strategies for advanced materials Our work has resulted in new and important insights into the deposition of a-Si:H-based materials, as well as into the nature of the Staebler-Wronski Effect (SWE). Presumably, many of these insights will be used by industrial partners to develop more systematic approaches in optimizing solar cells for higher performance and stability. This effort also cleared up several serious misconceptions about the nature of the p-layer in cells and the SWE in materials and cells. Finally, the subcontract identified future directions that should be pursued for greater understanding and improvement.

  14. Solar cell with a gallium nitride electrode

    DOEpatents

    Pankove, Jacques I.

    1979-01-01

    A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

  15. Developments toward an 18% efficient silicon solar cell

    NASA Technical Reports Server (NTRS)

    Meulenberg, A., Jr.

    1983-01-01

    Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

  16. High-efficiency solar cell and method for fabrication

    DOEpatents

    Hou, Hong Q.; Reinhardt, Kitt C.

    1999-01-01

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

  17. High-efficiency solar cell and method for fabrication

    DOEpatents

    Hou, H.Q.; Reinhardt, K.C.

    1999-08-31

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

  18. High Radiation Resistance IMM Solar Cell

    NASA Technical Reports Server (NTRS)

    Pan, Noren

    2015-01-01

    Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

  19. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

    SciTech Connect

    Sogabe, Tomah Ogura, Akio; Okada, Yoshitaka

    2014-02-21

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

  20. Optimization of Phase-Engineered a-Si:H-Based Multi-Junction Solar Cells: Second Annual Technical Status Report, January 2003--January 2004

    SciTech Connect

    Wronski, C. R.; Collins, R. W.; Vlahos, V.; Pearce, J. M.; Deng, J.; Albert, M.; Ferreira, G. M.; Chen, C.

    2004-08-01

    This subcontract report entails investigation of engineering improvements in the performance and stability of solar cells in a systematic way. It consists of the following four tasks: Task 1-Materials research and device development; Task 2-Process improvement directed by real-time diagnostics; Task 3-Device loss mechanisms; and Task 4-Characterization strategies for advanced materials. The real-time spectroscopic ellipsometry (RTSE) multichamber is near completion, and trial depositions with a-Si:H will begin shortly. Construction of the new dual beam photoconductivity (DBP) apparatus has been completed, and the new capabilities are being used in studies on a-Si:H thin films. A new apparatus is being constructed for in-depth studies on the mechanisms limiting the performance of a-Si:H solar cells and the two track studies (cells and films) of the Staebler-Wronski Effect. The capabilities include the ability to integrate the cell characteristics including the quantum efficiency, at different temperatures on both p-i-n and n-i-p solar cells.

  1. The Performance of Advanced III-V Solar Cells

    NASA Technical Reports Server (NTRS)

    Mueller, Robert L.; Gaddy, Edward; Day, John H. (Technical Monitor)

    2002-01-01

    Test results show triple junction solar cells with efficiencies as high as 27% at 28C and 136.7 mw/sq cm. Triple junction cells also achieve up to 27.5% at -120 C and 5 mw/sq cm, conditions applicable to missions to Jupiter. Some triple junction cells show practically no degradation as a result of Low Intensity Low Temperature (LILT) effects, while others show some; this degradation can be overcome with minor changes to the cell design.

  2. A Liquid Junction Photoelectrochemical Solar Cell Based on p-Type MeNH3PbI3 Perovskite with 1.05 V Open-Circuit Photovoltage.

    PubMed

    Hsu, Hsien-Yi; Ji, Li; Ahn, Hyun S; Zhao, Ji; Yu, Edward T; Bard, Allen J

    2015-11-25

    A liquid junction photoelectrochemical (PEC) solar cell based on p-type methylammonium lead iodide (p-MeNH3PbI3) perovskite with a large open-circuit voltage is developed. MeNH3PbI3 perovskite is readily soluble or decomposed in many common solvents. However, the solvent dichloromethane (CH2Cl2) can be employed to form stable liquid junctions. These were characterized with photoelectrochemical cells with several redox couples, including I3(-)/I(-), Fc/Fc(+), DMFc/DMFc(+), and BQ/BQ(•-) (where Fc is ferrocene, DMFc is decamethylferrocene, BQ is benzoquinone) in CH2Cl2. The solution-processed MeNH3PbI3 shows cathodic photocurrents and hence p-type behavior. The difference between the photocurrent onset potential and the standard potential for BQ/BQ(•-) is 1.25 V, which is especially large for a semiconductor with a band gap of 1.55 eV. A PEC photovoltaic cell, with a configuration of p-MeNH3PbI3/CH2Cl2, BQ (2 mM), BQ(•-) (2 mM)/carbon, shows an open-circuit photovoltage of 1.05 V and a short-circuit current density of 7.8 mA/cm(2) under 100 mW/cm(2) irradiation. The overall optical-to-electrical energy conversion efficiency is 6.1%. The PEC solar cell shows good stability for 5 h under irradiation.

  3. Organic Tandem Solar Cells: Design and Formation

    NASA Astrophysics Data System (ADS)

    Chen, Chun-Chao

    In the past decade, research on organic solar cells has gone through an important development stage leading to major enhancements in power conversion efficiency, from 4% to 9% in single-junction devices. During this period, there are many novel processing techniques and device designs that have been proposed and adapted in organic solar-cell devices. One well-known device architecture that helps maximize the solar cell efficiency is the multi-junction tandem solar-cell design. Given this design, multiple photoactive absorbers as subcells are stacked in a monolithic fashion and assembled via series connection into one complete device, known as the tandem solar cell. Since multiple absorbers with different optical energy bandgaps are being applied in one tandem solar-cell device, the corresponding solar cell efficiency is maximized through expanded absorption spectrum and reduced carrier thermalization loss. In Chapter 3, the architecture of solution-processible, visibly transparent solar cells is introduced. Unlike conventional organic solar-cell devices with opaque electrodes (such as silver, aluminum, gold and etc.), the semi-transparent solar cells rely on highly transparent electrodes and visibly transparent photoactive absorbers. Given these two criteria, we first demonstrated the visibly transparent single-junction solar cells via the polymer absorber with near-infrared absorption and the top electrode based on solution-processible silver nanowire conductor. The highest visible transparency (400 ˜ 700 nm) of 65% was achieved for the complete device structure. More importantly, power conversion efficiency of 4% was also demonstrated. In Chapter 4, we stacked two semi-transparent photoactive absorbers in the tandem architecture in order to realize the semi-transparent tandem solar cells. A noticeable performance improvement from 4% to 7% was observed. More importantly, we modified the interconnecting layers with the incorporation of a thin conjugated

  4. Time-resolved photoluminescence measurements for determining voltage-dependent charge-separation efficiencies of subcells in triple-junction solar cells

    SciTech Connect

    Tex, David M.; Ihara, Toshiyuki; Kanemitsu, Yoshihiko; Akiyama, Hidefumi; Imaizumi, Mitsuru

    2015-01-05

    Conventional external quantum-efficiency measurement of solar cells provides charge-collection efficiency for approximate short-circuit conditions. Because this differs from actual operating voltages, the optimization of high-quality tandem solar cells is especially complicated. Here, we propose a contactless method, which allows for the determination of the voltage dependence of charge-collection efficiency for each subcell independently. By investigating the power dependence of photoluminescence decays, charge-separation and recombination-loss time constants are obtained. The upper limit of the charge-collection efficiencies at the operating points is then obtained by applying the uniform field model. This technique may complement electrical characterization of the voltage dependence of charge collection, since subcells are directly accessible.

  5. Method for processing silicon solar cells

    DOEpatents

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  6. Method for processing silicon solar cells

    DOEpatents

    Tsuo, Y. Simon; Landry, Marc D.; Pitts, John R.

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  7. Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

    2005-01-01

    NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

  8. Development of gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface recombination, junction space-charge recombination, and built-in fields produced by nonuniform doping of the surface region. The fabrication technology is summarized. Electrical and optical measurements on samples of solar cells are included.

  9. STUDIES ON AN EPITHELIAL (GLAND) CELL JUNCTION

    PubMed Central

    Loewenstein, Werner R.; Kanno, Yoshinobu

    1964-01-01

    Membrane permeability of an epithelial cell junction (Drosophila salivary gland) was examined with intracellular microelectrodes and with fluorescent tracers. In contrast to the non-junctional cell membrane surface, which has a low permeability to ions (10-4 mho/cm2), the junctional membrane surface is highly permeable. In fact, it introduces no substantial restriction to ion flow beyond that in the cytoplasm; the resistance through a chain of cells (150 Ω cm) is only slightly greater than in extruded cytoplasm (100 Ω cm). The diffusion resistance along the intercellular space to the exterior, on the other hand, is very high. Here, there exists an ion barrier of, at least, 104Ω cm2. As a result, small ions and fluorescein move rather freely from one cell to the next, but do not leak appreciably through the intercellular space to the exterior. The organ here, rather than the single cell, appears to be the unit of ion environment. The possible underlying structural aspects are discussed. PMID:14206423

  10. Thin foil silicon solar cells with coplanar back contacts

    NASA Technical Reports Server (NTRS)

    Ho, F.; Iles, P. A.; Baraona, C. R.

    1981-01-01

    To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

  11. A theoretical analysis of the current-voltage characteristics of solar cells

    NASA Technical Reports Server (NTRS)

    Fang, R. C. Y.; Hauser, J. R.

    1979-01-01

    The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

  12. Light-Induced Increase of Electron Diffusion Length in a p-n Junction Type CH3NH3PbBr3 Perovskite Solar Cell.

    PubMed

    Kedem, Nir; Brenner, Thomas M; Kulbak, Michael; Schaefer, Norbert; Levcenko, Sergiu; Levine, Igal; Abou-Ras, Daniel; Hodes, Gary; Cahen, David

    2015-07-01

    High band gap, high open-circuit voltage solar cells with methylammonium lead tribromide (MAPbBr3) perovskite absorbers are of interest for spectral splitting and photoelectrochemical applications, because of their good performance and ease of processing. The physical origin of high performance in these and similar perovskite-based devices remains only partially understood. Using cross-sectional electron-beam-induced current (EBIC) measurements, we find an increase in carrier diffusion length in MAPbBr3(Cl)-based solar cells upon low intensity (a few percent of 1 sun intensity) blue laser illumination. Comparing dark and illuminated conditions, the minority carrier (electron) diffusion length increases about 3.5 times from Ln = 100 ± 50 nm to 360 ± 22 nm. The EBIC cross section profile indicates a p-n structure between the n-FTO/TiO2 and p-perovskite, rather than the p-i-n structure, reported for the iodide derivative. On the basis of the variation in space-charge region width with varying bias, measured by EBIC and capacitance-voltage measurements, we estimate the net-doping concentration in MAPbBr3(Cl) to be 3-6 × 10(17) cm(-3).

  13. Fabrication of nanostructured CIGS solar cells

    NASA Astrophysics Data System (ADS)

    Zhang, Hongwang; Wang, Fang; Parry, James; Perera, Samanthe; Zeng, Hao

    2012-02-01

    We present the work on Cu(In,Ga)(Se,S)2 based nanostructured solar cells based on nanowire arrays. CIGS as the light absorber for thin-film solar cells has been widely studied recently, due to its high absorption coefficient, long-term stability, and low-cost of fabrication. Recently, solution phase processed CIGS thin film solar cells attracted great attention due to their extremely low fabrication cost. However, the performance is lower than vacuum based thin films possibly due to higher density of defects and lower carrier mobility. On the other hand, one dimensional ordered nanostructures such as nanowires and nanorods can be used to make redial junction solar cells, where the orthogonality between light absorption and charge carrier separation can lead to enhanced PV performance. Since the charge carriers only need to traverse a short distance in the radial direction before they are separated at the heterojunction interface, the radial junction scheme can be more defect tolerant than their planar junction scheme. In this work, a wide band gap nanowire or nanotube array such as TiO2 is used as a scaffold where CIGS is conformally coated using solution phase to obtain a radial heterojunction solar cell. Their performance is compared that of the planar thin film solar cells fabricated with the same materials.

  14. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John

    2012-07-17

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  15. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John

    2014-11-04

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  16. NREL Studies Carrier Separation and Transport in Perovskite Solar Cells

    SciTech Connect

    2016-01-01

    NREL scientists studied charge separation and transport in perovskite solar cells by determining the junction structure across the solar device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates a p-n junction structure at the interface between titanium dioxide and perovskite. In addition, minority-carrier transport within the devices operates under diffusion/drift. Clarifying the fundamental junction structure provides significant guidance for future research and development. This NREL study points to the fact that improving carrier mobility is a critical factor for continued efficiency gains in perovskite solar cells.

  17. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

    PubMed

    Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2015-07-16

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  18. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

    2015-07-01

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  19. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

    PubMed Central

    Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

    2015-01-01

    The multi-junction concept is the most relevant approach to overcome the Shockley–Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies. PMID:26177808

  20. Indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving

    1991-01-01

    The direction for InP solar cell research; reduction of cell cost; increase of cell efficiency; measurements needed to better understand cell performance; n/p versus p/n; radiation effects; major problems in cell contacting; and whether the present level of InP solar cell research in the USA should be maintained, decreased, or increased were considered.

  1. Solar Photovoltaic Cells.

    ERIC Educational Resources Information Center

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  2. Electron irradiation of modern solar cells

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.; Miyahira, T. F.

    1977-01-01

    A number of modern solar cell types representing 1976 technology (as well as some older types) were irradiated with 1 MeV electrons (and a limited number with 2 MeV electrons and 10 MeV protons). After irradiation, the cells were annealed, with I-V curves measured under AMO at 30 C. The purpose was to provide data to be incorporated in the revision of the solar cell radiation handbook. Cell resistivities ranged from 2 to 20 ohm-cm, and cell thickness from 0.05 to 0.46 mm. Cell types examined were conventional, shallow junction, back surface field (BSF), textured, and textured with BSF.

  3. MIS silicon solar cells: potential advantages

    SciTech Connect

    Cheek, G.; Mertens, R.

    1981-05-01

    Recent progress with silicon solar cells based on the MIS or SIS structure is reviewed. To be competitive with pn junction technology in the near term, these cells must be much cheaper or have a higher efficiency in a production environment. Apparently, the minority carrier MIS cells have the greatest potential for large-scale applications. The data currently indicate that all types of MIS/SIS cells have some inherent instability problems.

  4. Plastic Schottky-barrier solar cells

    DOEpatents

    Waldrop, J.R.; Cohen, M.J.

    1981-12-30

    A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

  5. Presence of functional gap junctions in human embryonic stem cells.

    PubMed

    Wong, Raymond C B; Pébay, Alice; Nguyen, Linh T V; Koh, Karen L L; Pera, Martin F

    2004-01-01

    Gap junctions are intercellular channels that allow both chemical and electrical signaling between two adjacent cells. Gap junction intercellular communication has been implicated in the regulation of various cellular processes, including cell migration, cell proliferation, cell differentiation, and cell apoptosis. This study aimed to determine the presence and functionality of gap junctions in human embryonic stem cells (hESCs). Using reverse transcription--polymerase chain reaction and immunocytochemistry, we demonstrate that human ES cells express two gap junction proteins, connexin 43 and connexin 45. Western blot analysis revealed the presence of three phosphorylated forms (nonphosphorylated [NP], P1, and P2) of connexin 43, NP being prominent. Moreover, scrape loading/dye transfer assay indicates that human ES cells are coupled through functional gap junctions that are inhibited by protein kinase C activation and extracellular signal-regulated kinase inhibition.

  6. Role of autophagy in the regulation of epithelial cell junctions.

    PubMed

    Nighot, Prashant; Ma, Thomas

    2016-01-01

    Autophagy is a cell survival mechanism by which bulk cytoplasmic material, including soluble macromolecules and organelles, is targeted for lysosomal degradation. The role of autophagy in diverse cellular processes such as metabolic stress, neurodegeneration, cancer, aging, immunity, and inflammatory diseases is being increasingly recognized. Epithelial cell junctions play an integral role in the cell homeostasis via physical binding, regulating paracellular pathways, integrating extracellular cues into intracellular signaling, and cell-cell communication. Recent data indicates that cell junction composition is very dynamic. The junctional protein complexes are actively regulated in response to various intra- and extra-cellular clues by intracellular trafficking and degradation pathways. This review discusses the recent and emerging information on how autophagy regulates various epithelial cell junctions. The knowledge of autophagy regulation of epithelial junctions will provide further rationale for targeting autophagy in a wide variety of human disease conditions. PMID:27583189

  7. The junctions that don't fit the scheme: special symmetrical cell-cell junctions of their own kind.

    PubMed

    Franke, Werner W; Rickelt, Steffen; Barth, Mareike; Pieperhoff, Sebastian

    2009-10-01

    Immunocytochemical, electron-, and immunoelectron-microscopical studies have revealed that, in addition to the four major "textbook categories" of cell-cell junctions (gap junctions, tight junctions, adherens junctions, and desmosomes), a broad range of other junctions exists, such as the tiny puncta adhaerentia minima, the taproot junctions (manubria adhaerentia), the plakophilin-2-containing adherens junctions of mesenchymal or mesenchymally derived cell types including malignantly transformed cells, the composite junctions (areae compositae) of the mature mammalian myocardium, the cortex adhaerens of the eye lens, the interdesmosomal "sandwich" or "stud" junctions in the subapical layers of stratified epithelia and the tumors derived therefrom, and the complexus adhaerentes of the endothelial and virgultar cells of the lymph node sinus. On the basis of their sizes and shapes, other morphological criteria, and their specific molecular ensembles, these junctions and the genes that encode them cannot be subsumed under one of the major categories mentioned above but represent special structures in their own right, appear to serve special functions, and can give rise to specific pathological disorders. PMID:19680692

  8. Theoretical efficiency limit for a two-terminal multi-junction "step-cell" using detailed balance method

    NASA Astrophysics Data System (ADS)

    Abdul Hadi, Sabina; Fitzgerald, Eugene A.; Nayfeh, Ammar

    2016-02-01

    Here we present detailed balance efficiency limit for a novel two-terminal dual and triple junction "step-cell" under AM 1.5G and AM 0 incident spectrums. The step-cell is a multi-junction (MJ) solar cell in which part of the top cell is removed, exposing some of the bottom cell area to unfiltered incident light, thus increasing bottom cell's photogenerated current. Optical generation of the bottom cell is modeled in two parts: step part, limited by the bottom cell bandgap, and conventional part, additionally limited by the top cell absorption. Our results show that conventionally designed MJ cell with optimized bandgap combination of 1.64 eV/0.96 eV for dual junction and 1.91 eV/1.37 eV/0.93 eV for triple junction has the highest theoretical efficiency limit. However, the step-cell design provides significant efficiency improvement for cells with non-optimum bandgap values. For example, for 1.41 eV ( ˜GaAs)/Si dual junction under AM 1.5G, efficiency limit increases from ˜21% in a conventional design to 38.7% for optimized step-cell. Similar benefits are observed for three-junction step-cell and for AM 0 spectrum studied here. Step-cell relaxes bandgap requirements for efficient MJ solar cells, providing an opportunity for a wider selection of materials and cost reduction.

  9. Ouabain modulates epithelial cell tight junction

    PubMed Central

    Larre, Isabel; Lazaro, Amparo; Contreras, Ruben G.; Balda, Maria S.; Matter, Karl; Flores-Maldonado, Catalina; Ponce, Arturo; Flores-Benitez, David; Rincon-Heredia, Ruth; Padilla-Benavides, Teresita; Castillo, Aída; Shoshani, Liora; Cereijido, Marcelino

    2010-01-01

    Epithelial cells treated with high concentrations of ouabain (e.g., 1 μM) retrieve molecules involved in cell contacts from the plasma membrane and detach from one another and their substrates. On the basis of this observation, we suggested that ouabain might also modulate cell contacts at low, nontoxic levels (10 or 50 nM). To test this possibility, we analyzed its effect on a particular type of cell–cell contact: the tight junction (TJ). We demonstrate that at concentrations that neither inhibit K+ pumping nor disturb the K+ balance of the cell, ouabain modulates the degree of sealing of the TJ as measured by transepithelial electrical resistance (TER) and the flux of neutral 3 kDa dextran (JDEX). This modulation is accompanied by changes in the levels and distribution patterns of claudins 1, 2, and 4. Interestingly, changes in TER, JDEX, and claudins behavior are mediated through signal pathways containing ERK1/2 and c-Src, which have distinct effects on each physiological parameter and claudin type. These observations support the theory that at low concentrations, ouabain acts as a modulator of cell–cell contacts. PMID:20534449

  10. Solar cell encapsulation

    NASA Technical Reports Server (NTRS)

    Gupta, Amitava (Inventor); Ingham, John D. (Inventor); Yavrouian, Andre H. (Inventor)

    1983-01-01

    A polymer syrup for encapsulating solar cell assemblies. The syrup includes uncrosslinked poly(n-butyl)acrylate dissolved in n-butyl acrylate monomer. Preparation of the poly(n-butyl)acrylate and preparation of the polymer syrup is disclosed. Methods for applying the polymer syrup to solar cell assemblies as an encapsulating pottant are described. Also included is a method for solar cell construction utilizing the polymer syrup as a dual purpose adhesive and encapsulating material.

  11. Heterojunction solar cell

    DOEpatents

    Olson, J.M.

    1994-08-30

    A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

  12. Heterojunction solar cell

    DOEpatents

    Olson, Jerry M.

    1994-01-01

    A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

  13. Solar cell device

    SciTech Connect

    Nishiura, M.; Haruki, H.; Miyagi, M.; Sakai, H.; Uchida, Y.

    1984-06-26

    A solar cell array is equipped with serially or parallel connected reverse polarity diodes formed simultaneously with the array. The diodes are constituted by one or more solar cells of the array which may be shaded to prevent photoelectric conversion, and which are electrically connected in reverse polarity with respect to the remaining cells.

  14. Behavior of interdigitated back-contact solar cells

    NASA Technical Reports Server (NTRS)

    Cheng, L. J.; Leung, D. C.

    1980-01-01

    This paper presents experimental data concerning operation mechanisms of two versions of interdigitated back-contact solar cells: the tandem junction cell and the front-surface field cell. It is shown that a photogenerated forward bias at the front junction of a tandem junction cell is a critical parameter for cell performance which not only causes photogenerated carriers to migrate to the back junction, but also eliminates the reduction in photoresponse over back p(+) metallization regions. However, no similar light effects are observed in the performance of front-surface field cells. Finally, a discussion on mechanisms concerning the performance of front-surface field and tandem junction cells along with their merits is given.

  15. Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell.

    PubMed

    Li, Senlin; Bi, Jingfeng; Li, Mingyang; Yang, Meijia; Song, Minghui; Liu, Guanzhou; Xiong, Weiping; Li, Yang; Fang, Yanyan; Chen, Changqing; Lin, Guijiang; Chen, Wenjun; Wu, Chaoyu; Wang, Duxiang

    2015-01-01

    The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

  16. Hydrogenated Amorphous Silicon Germanium Active Layer for Top Cell of a Multi Junction Cell Structure.

    PubMed

    Cho, Jaehyun; Iftiquar, S M; Kim, Minbum; Park, Jinjoo; Jung, Junhee; Kim, Jiwoong; Yi, Junsin

    2016-05-01

    Intrinsic hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy is generally used in the bottom cell because of its low band gap. The a-SiGe:H has a higher photo conductivity in comparison to the a-Si:H; thus, it is expected that the a-SiGe:H can show better short circuit current density than that of the a-Si:H based solar cell. Therefore, we optimized a-SiGe:H active layer that can be a suitable choice for the front cell of a multi junction.solar cell. Furthermore, we carried out a comparative study of the solar cells that have a-SiGe:H and a-Si:H as respective active layers. The a-SiGe:H based solar cells show higher short circuit current density, while the a-Si:H based cells show higheropen circuit voltage. The current-voltage characteristics of these cells are as follows: (a) V(oc) = 770 mV, J(sc) = 15.0 mA/cm2, FF = 64.5%, and η = 7.47% for a-SiGe:H based cell; and (b) V(oc) = 826 mV, J(sc) = 13.63 mA/cm2, FF = 72.0%, and η = 8.1% for a-Si:H based cell.

  17. Organization of multiprotein complexes at cell–cell junctions

    PubMed Central

    2008-01-01

    The formation of stable cell–cell contacts is required for the generation of barrier-forming sheets of epithelial and endothelial cells. During various physiological processes like tissue development, wound healing or tumorigenesis, cellular junctions are reorganized to allow the release or the incorporation of individual cells. Cell–cell contact formation is regulated by multiprotein complexes which are localized at specific structures along the lateral cell junctions like the tight junctions and adherens junctions and which are targeted to these site through their association with cell adhesion molecules. Recent evidence indicates that several major protein complexes exist which have distinct functions during junction formation. However, this evidence also indicates that their composition is dynamic and subject to changes depending on the state of junction maturation. Thus, cell–cell contact formation and integrity is regulated by a complex network of protein complexes. Imbalancing this network by oncogenic proteins or pathogens results in barrier breakdown and eventually in cancer. Here, I will review the molecular organization of the major multiprotein complexes at junctions of epithelial cells and discuss their function in cell–cell contact formation and maintenance. PMID:18365233

  18. Gap Junctions between Photoreceptor Cells in the Vertebrate Retina

    PubMed Central

    Raviola, Elio; Gilula, Norton B.

    1973-01-01

    In the outer plexiform layer of the retina the synaptic endings of cone cells make specialized junctions with each other and with the endings of rod cells. The ultrastructure of these interreceptor junctions is described in retinas of monkeys, rabbits, and turtles, in thin sections of embedded specimens and by the freeze-fracturing technique. Cone-to-rod junctions are ribbon-like areas of close membrane approximation. On either side of the narrowing of the intercellular space, the junctional membranes contain a row of particles located on the fracture face A (cytoplasmic leaflet), while the complementary element, a row of single depressions, is located on fracture face B. The particle rows are surrounded by a membrane region that is devoid of particulate inclusions and bears an adherent layer of dense cytoplasmic material. Cone-to-cone junctions in some places are identical to cone-to-rod junctions, while in other places they closely resemble typical gap junctions (nexus). Interreceptor junctions, therefore, represent a morphological variant of the gap junction, and probably mediate electrotonic coupling between neighboring photoreceptor cells. Images PMID:4198274

  19. Nanoparticle scattering for multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Mellor, A.; Hylton, N. P.; Höhn, O.; Wellens, C.; Hauser, H.; Thomas, T.; Al-Saleh, Y.; Tucher, N.; Oliva, E.; Bläsi, B.; Ekins-Daukes, N. J.; Maier, S. A.

    2016-04-01

    We investigate the integration of Al nanoparticle arrays into the anti-reflection coatings (ARCs) of commercial triple-junction GaInP/ In0.01GaAs /Ge space solar cells, and study their effect on the radiation-hardness. It is postulated that the presence of nanoparticle arrays can improve the radiation-hardness of space solar cells by scattering incident photons obliquely into the device, causing charger carriers to be photogenerated closer to the junction, and hence improving the carrier collection efficiency in the irradiation-damaged subcells. The Al nanoparticle arrays were successfully embedded in the ARCs, over large areas, using nanoimprint lithography: a replication technique with the potential for high throughput and low cost. Irradiation testing showed that the presence of the nanoparticles did not improve the radiation-hardness of the solar cells, so the investigated structure has proven not to be ideal in this context. Nonetheless, this paper reports on the details and results of the nanofabrication to inform about future integration of alternative light-scattering structures into multi-junction solar cells or other optoelectronic devices.

  20. Solar cell shingle

    NASA Technical Reports Server (NTRS)

    Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G. (Inventor)

    1977-01-01

    A solar cell shingle was made of an array of solar cells on a lower portion of a substantially rectangular shingle substrate made of fiberglass cloth or the like. The solar cells may be encapsulated in flourinated ethylene propylene or some other weatherproof translucent or transparent encapsulant to form a combined electrical module and a roof shingle. The interconnected solar cells were connected to connectors at the edge of the substrate through a connection to a common electrical bus or busses. An overlap area was arranged to receive the overlap of a cooperating similar shingle so that the cell portion of the cooperating shingle may overlie the overlap area of the roof shingle. Accordingly, the same shingle serves the double function of an ordinary roof shingle which may be applied in the usual way and an array of cooperating solar cells from which electrical energy may be collected.

  1. Method of making a back contacted solar cell

    DOEpatents

    Gee, J.M.

    1995-11-21

    A back-contacted solar cell is described having laser-drilled vias connecting the front-surface carrier-collector junction to an electrode grid on the back surface. The structure may also include a rear surface carrier-collector junction connected to the same grid. The substrate is connected to a second grid which is interdigitated with the first. Both grids are configured for easy series connection with neighboring cells. Several processes are disclosed to produce the cell. 2 figs.

  2. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

    PubMed

    Martí, A; Luque, A

    2015-01-01

    Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

  3. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

    PubMed Central

    Martí, A.; Luque, A.

    2015-01-01

    Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

  4. Electrostatic Discharge Test of Multi-Junction Solar Array Coupons After Combined Space Environmental Exposures

    NASA Technical Reports Server (NTRS)

    Wright, Kenneth H.; Schneider, Todd; Vaughn, Jason; Hoang, Bao; Funderburk, Victor V.; Wong, Frankie; Gardiner, George

    2010-01-01

    A set of multi-junction GaAs/Ge solar array test coupons were subjected to a sequence of 5-year increments of combined environmental exposure tests. The test coupons capture an integrated design intended for use in a geosynchronous (GEO) space environment. A key component of this test campaign is conducting electrostatic discharge (ESD) tests in the inverted gradient mode. The protocol of the ESD tests is based on the ISO/CD 11221, the ISO standard for ESD testing on solar array panels. This standard is currently in its final review with expected approval in 2010. The test schematic in the ISO reference has been modified with Space System/Loral designed circuitry to better simulate the on-orbit operational conditions of its solar array design. Part of the modified circuitry is to simulate a solar array panel coverglass flashover discharge. All solar array coupons used in the test campaign consist of 4 cells. The ESD tests are performed at the beginning of life (BOL) and at each 5-year environment exposure point. The environmental exposure sequence consists of UV radiation, electron/proton particle radiation, thermal cycling, and ion thruster plume. This paper discusses the coverglass flashover simulation, ESD test setup, and the importance of the electrical test design in simulating the on-orbit operational conditions. Results from 5th-year testing are compared to the baseline ESD characteristics determined at the BOL condition.

  5. Heavily doped polysilicon-contact solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Arienzo, M.; Iles, P. A.

    1985-01-01

    The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

  6. Development of cell junctions in sea-urchin embryos.

    PubMed

    Spiegel, E; Howard, L

    1983-07-01

    The development of cell junctions in sea-urchin embryos has been investigated using thin sections, lanthanum-tracer and freeze-fracture techniques. Three types of desmosomes are present: belt desmosomes and spot desmosomes, which attach cells to each other, and hemi-desmosomes, which attach cells to the basement membrane. Two types of septate junctions are present: the straight, unbranched, double-septum septate, which is present in epithelial cells throughout embryogenesis, and the pleated, anastomosing, single-septum septate. The latter is formed only on cells that have invaginated to the interior of the embryo to form the digestive tract. The pleated junctions are shown to replace the straight junctions that were originally present before the cells migrated to the interior. It is suggested that these pleated septates may be specialized for digestive processes, since they are developed just prior to feeding and are retained in the adult intestine. Tricellular junctions, which join the bicellular junctions of three adjoining cells, have been identified in the embryo and in the adult intestine. Evidence for the presence of gap junctions was not obtained, but there are indications of their presence.

  7. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  8. Single junction inverted polymer solar cell reaching power conversion efficiency 10.31% by employing dual-doped zinc oxide nano-film as cathode interlayer.

    PubMed

    Liao, Sih-Hao; Jhuo, Hong-Jyun; Yeh, Po-Nan; Cheng, Yu-Shan; Li, Yi-Lun; Lee, Yu-Hsuan; Sharma, Sunil; Chen, Show-An

    2014-01-01

    We present high efficiency and stable inverted PSCs (i-PSC) by employing sol-gel processed simultaneously doped ZnO by Indium and fullerene derivative (BisNPC60-OH) (denoted as InZnO-BisC60) film as cathode interlayer and PTB7-Th:PC71BM as the active layer (where PTB7-Th is a low bandgap polymer we proposed previously). This dual-doped ZnO, InZnO-BisC60, film shows dual and opposite gradient dopant concentration profiles, being rich in fullerene derivative at the cathode surface in contact with active layer and rich in In at the cathode surface in contact with the ITO surface. Such doping in ZnO not only gives improved surface conductivity by a factor of 270 (from 0.015 to 4.06 S cm(-1)) but also provides enhanced electron mobility by a factor of 132 (from 8.25*10(-5) to 1.09*10(-2) cm(2) V(-1) s(-1)). The resulting i-PSC exhibits the improved PCE 10.31% relative to that with ZnO without doping 8.25%. This PCE 10.31% is the best result among the reported values so far for single junction PSC. PMID:25351472

  9. Single Junction Inverted Polymer Solar Cell Reaching Power Conversion Efficiency 10.31% by Employing Dual-Doped Zinc Oxide Nano-Film as Cathode Interlayer

    NASA Astrophysics Data System (ADS)

    Liao, Sih-Hao; Jhuo, Hong-Jyun; Yeh, Po-Nan; Cheng, Yu-Shan; Li, Yi-Lun; Lee, Yu-Hsuan; Sharma, Sunil; Chen, Show-An

    2014-10-01

    We present high efficiency and stable inverted PSCs (i-PSC) by employing sol-gel processed simultaneously doped ZnO by Indium and fullerene derivative (BisNPC60-OH) (denoted as InZnO-BisC60) film as cathode interlayer and PTB7-Th:PC71BM as the active layer (where PTB7-Th is a low bandgap polymer we proposed previously). This dual-doped ZnO, InZnO-BisC60, film shows dual and opposite gradient dopant concentration profiles, being rich in fullerene derivative at the cathode surface in contact with active layer and rich in In at the cathode surface in contact with the ITO surface. Such doping in ZnO not only gives improved surface conductivity by a factor of 270 (from 0.015 to 4.06 S cm-1) but also provides enhanced electron mobility by a factor of 132 (from 8.25*10-5 to 1.09*10-2 cm2 V-1 s-1). The resulting i-PSC exhibits the improved PCE 10.31% relative to that with ZnO without doping 8.25%. This PCE 10.31% is the best result among the reported values so far for single junction PSC.

  10. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Tada, H. Y.; Carter, J. R., Jr.

    1977-01-01

    Solar cell theory cells are manufactured, and how they are modeled mathematically is reviewed. The interaction of energetic charged particle radiation with solar cells is discussed in detail and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Finally, an extensive body of data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence is presented.

  11. Monolithic DSSC/CIGS tandem solar cell fabricated by a solution process

    PubMed Central

    Moon, Sung Hwan; Park, Se Jin; Kim, Sang Hoon; Lee, Min Woo; Han, Jisu; Kim, Jin Young; Kim, Honggon; Hwang, Yun Jeong; Lee, Doh-Kwon; Min, Byoung Koun

    2015-01-01

    Tandem architecture between organic (dye-sensitized solar cell, DSSC) and inorganic (CuInGaSe2 thin film solar cell, CIGS) single-junction solar cells was constructed particularly based on a solution process. Arc-plasma deposition was employed for the Pt interfacial layer to minimize the damage to the layers of the CIGS bottom cell. Solar cell efficiency of 13% was achieved, which is significant progress from individual single-junction solar cells (e.g., 7.25 and 6.2% for DSSC and CIGS, respectively). PMID:25759191

  12. Nanocrystalline silicon based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  13. Gallium arsenide phosphide top solar cell

    SciTech Connect

    McNeely, J.B.; Barnett, A.M.

    1986-04-15

    This patent describes a tandem solar cell having a silicon solar cell for a low energy gap bottom cell and a high energy gap top cell. The improvement which a gallium arsenide phosphide top solar cell which described here is a. a transparent gallium phosphide substrate; b. a first active semiconductor layer of GaAs/sub 1-Y/P/sub Y/ and of a first conductivity type overlying the substrate; c. a second active semiconductor layer of GaAs/sub 1-X/P/sub X/ and of a second conductivity type opposite the first conductivity type overlying and forming a photovoltaic junction therewith; d. a transparent first electrical contact in ohmic contact with the substrate; and e. a transparent second electrical contact in ohmic contact with the second active semiconductor layer.

  14. Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

    NASA Technical Reports Server (NTRS)

    Meier, D. L.; Szedon, J. R.; Bartko, J.; Chung, M. A.

    1989-01-01

    A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

  15. Lateral superlattice solar cells

    SciTech Connect

    Mascarenhas, A.; Zhang, Y.; Millunchick, J.M.; Twesten, R.D.; Jones, E.D.

    1997-10-01

    A novel structure which comprises of a lateral superlattice as the active layer of a solar cell is proposed. If the alternating regions A and B of a lateral superlattice ABABAB... are chosen to have a Type-II band offset, it is shown that the performance of the active absorbing region of the solar cell is optimized. In essence, the Type-II lateral superlattice region can satisfy the material requirements for an ideal solar cells active absorbing region, i.e. simultaneously having a very high transition probability for photogeneration and a very long minority carrier recombination lifetime.

  16. Dye sensitized solar cells.

    PubMed

    Wei, Di

    2010-01-01

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO(2), ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed. PMID:20480003

  17. Dye Sensitized Solar Cells

    PubMed Central

    Wei, Di

    2010-01-01

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed. PMID:20480003

  18. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  19. JPL lithium doped solar cell development program

    NASA Technical Reports Server (NTRS)

    Berman, P. A.

    1972-01-01

    One of the most significant problems encountered in the use of silicon solar cells in space is the sensitivity of the device to electron and proton radiation exposure. The p-diffused-into-n-base solar cells were replaced with the more radiation tolerant n-diffused-into-p-base solar cells. Another advancement in achieving greater radiation tolerance was the discovery that the addition of lithium to n-base silicon resulted in what appeared to be annealing of radiation-induced defects. This phenomenon is being exploited to develop a high efficiency radiation resistant lithium-doped solar cell. Lithium-doped solar cells fabricated from oxygen-lean and oxygen-rich silicon were obtained with average initial efficiencies of 11.9% at air mass zero and 28 C, as compared to state-of-the-art n-p cells fabricated from 10 ohm cm silicon with average efficiencies of 11.3% under similar conditions. Lithium-doped cells demonstrated the ability to withstand three to five times the fluence of 1-MeV electrons before degrading to a power equivalent to state-of-the-art solar cells. The principal investigations are discussed with respect to fabrication of high efficiency radiation resistant lithium-doped cells, including starting material, p-n junction diffusion, lithium source introduction, and lithium diffusion.

  20. Gallium arsenide solar cell radiation damage study

    NASA Technical Reports Server (NTRS)

    Maurer, R. H.; Herbert, G. A.; Kinnison, J. D.; Meulenberg, A.

    1989-01-01

    A thorough analysis has been made of electron- and proton- damaged GaAs solar cells suitable for use in space. It is found that, although some electrical parametric data and spectral response data are quite similar, the type of damage due to the two types of radiation is different. An I-V analysis model shows that electrons damage the bulk of the cell and its currents relatively more, while protons damage the junction of the cell and its voltages more. It is suggested that multiple defects due to protons in a strong field region such as a p/n junction cause the greater degradation in cell voltage, whereas the individual point defects in the quasi-neutral minority-carrier-diffusion regions due to electrons cause the greater degradation in cell current and spectral response.

  1. Gap Junctions and Biophysical Regulation of Bone Cells

    PubMed Central

    Lloyd, Shane A. J.

    2013-01-01

    Communication between osteoblasts, osteoclasts, and osteocytes is integral to their ability to build and maintain the skeletal system and respond to physical signals. Various physiological mechanisms, including nerve communication, hormones, and cytokines, play an important role in this process. More recently, the important role of direct, cell–cell communication via gap junctions has been established. In this review, we demonstrate the integral role of gap junctional intercellular communication (GJIC) in skeletal physiology and bone cell mechanosensing. PMID:23762015

  2. High Current ESD Test of Advanced Triple Junction Solar Array Coupon

    NASA Technical Reports Server (NTRS)

    Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

    2014-01-01

    Testing was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by Space Systems Loral, LLC (SSL). The ATJ coupon was a small, 4-cell, two-string configuration of flight-type design that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge (ESD) testing at two string voltages (100 V, 150 V) and four string currents (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micro-seconds to 2.75 milli-seconds. All TSAs occurred at a string voltage of 150 V. Post-ESD functional testing showed that no degradation occurred due to the TSA events. These test results point to a robust design for application to a high-current, high-power mission.

  3. (Gallium arsenide solar cells)

    SciTech Connect

    Not Available

    1985-01-01

    A transient liquid phase epitaxial growth system is described, including the growth procedure. Also discussed are the antireflection coating of a gallium arsenide solar cell, the metal contact pattern, and current-voltage characteristics. (LEW)

  4. Solar cell array interconnects

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    1995-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  5. Solar cell array interconnects

    DOEpatents

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  6. Nanocrystal Solar Cells

    SciTech Connect

    Gur, Ilan

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  7. Lightweight solar cell

    SciTech Connect

    Hotaling, S.P.

    1993-06-22

    A lightweight solar cell is described comprising: (a) an LD aerogel substrate having a density of between 10-1,000 mg/cc, the surface of the substrate being polished (b) a dielectric planarization layer being applied to the polished surface, and (c) at least one layer of PV material deposited thereon. The solar cell having a plurality of PV layers deposited on the planarization layer.

  8. Thin silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hall, R. B.; Bacon, C.; Direda, V.; Ford, D. H.; Ingram, A. E.; Cotter, J.; Hughes-Lampros, T.; Rand, J. A.; Ruffins, T. R.; Barnett, A. M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (less than 50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  9. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  10. High Current ESD Test of Advanced Triple Junction Solar Array Coupon

    NASA Technical Reports Server (NTRS)

    Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

    2015-01-01

    A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micros to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

  11. High Current ESD Test of Advanced Triple Junction Solar Array Coupon

    NASA Technical Reports Server (NTRS)

    Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

    2014-01-01

    Testing was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by Space Systems/Loral, LLC (SSL). The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge (ESD) testing at two string voltages (100 V, 150 V) and four array currents (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micro-seconds to 2.75 milli-seconds. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission.

  12. High Current ESD Test of Advanced Triple Junction Solar Array Coupon

    NASA Technical Reports Server (NTRS)

    Wright, K. H.; Schneider, T. A.; Vaughn, J. A.; Hoang, B.; Wong, F.

    2014-01-01

    A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 µs to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

  13. Photoelectrochemical Solar Cells.

    ERIC Educational Resources Information Center

    McDevitt, John T.

    1984-01-01

    This introduction to photoelectrochemical (PEC) cells reviews topics pertaining to solar energy conversion and demonstrates the ease with which a working PEC cell can be prepared with n-type silicon as the photoanode and a platinum counter electrode (both immersed in ethanolic ferrocene/ferricenium solutions). Experiments using the cell are…

  14. Screening of solar cells

    SciTech Connect

    Appelbaum, J.; Chait, A.; Thompson, D.A.

    1993-07-01

    Because solar cells in a production batch are not identical, screening is performed to obtain similar cells for aggregation into arrays. A common technique for screening is based on a single operating point of the I-V characteristic of the cell, usually the maximum power point. As a result, inferior cell matching may occur at the actual operating points. Screening solar cells based on the entire I-V characteristic will inherently result in more similar cells in the array. An array consisting of more similar cells is likely to have better overall characteristics and more predictable performance. Solar cell screening methods and cell ranking are discussed. The concept of a mean cell is defined as a cell 'best' representing all the cells in the production batch. The screening and ranking of all cells are performed with respect to the mean cell. The comparative results of different screening methods are illustrated on a batch of 50 silicon cells of the Space Station Freedom.

  15. Screening of solar cells

    NASA Technical Reports Server (NTRS)

    Appelbaum, J.; Chait, A.; Thompson, D. A.

    1993-01-01

    Because solar cells in a production batch are not identical, screening is performed to obtain similar cells for aggregation into arrays. A common technique for screening is based on a single operating point of the I-V characteristic of the cell, usually the maximum power point. As a result, inferior cell matching may occur at the actual operating points. Screening solar cells based on the entire I-V characteristic will inherently result in more similar cells in the array. An array consisting of more similar cells is likely to have better overall characteristics and more predictable performance. Solar cell screening methods and cell ranking are discussed. The concept of a mean cell is defined as a cell 'best' representing all the cells in the production batch. The screening and ranking of all cells are performed with respect to the mean cell. The comparative results of different screening methods are illustrated on a batch of 50 silicon cells of the Space Station Freedom.

  16. Welded solar cell interconnection

    NASA Technical Reports Server (NTRS)

    Stofel, E. J.; Browne, E. R.; Meese, R. A.; Vendura, G. J.

    1982-01-01

    The efficiency of the welding of solar-cell interconnects is compared with the efficiency of soldering such interconnects, and the cases in which welding may be superior are examined. Emphasis is placed on ultrasonic welding; attention is given to the solar-cell welding machine, the application of the welding process to different solar-cell configurations, producibility, and long-life performance of welded interconnects. Much of the present work has been directed toward providing increased confidence in the reliability of welding using conditions approximating those that would occur with large-scale array production. It is concluded that there is as yet insufficient data to determine which of three methods (soldering, parallel gap welding, and ultrasonic welding) provides the longest-duration solar panel life.

  17. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

    DOEpatents

    Gonzalez, Franklin N.; Neugroschel, Arnost

    1984-02-14

    A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

  18. Solution-processed small-molecule solar cells: breaking the 10% power conversion efficiency.

    PubMed

    Liu, Yongsheng; Chen, Chun-Chao; Hong, Ziruo; Gao, Jing; Yang, Yang Michael; Zhou, Huanping; Dou, Letian; Li, Gang; Yang, Yang

    2013-11-28

    A two-dimensional conjugated small molecule (SMPV1) was designed and synthesized for high performance solution-processed organic solar cells. This study explores the photovoltaic properties of this molecule as a donor, with a fullerene derivative as an acceptor, using solution processing in single junction and double junction tandem solar cells. The single junction solar cells based on SMPV1 exhibited a certified power conversion efficiency of 8.02% under AM 1.5 G irradiation (100 mW cm(-2)). A homo-tandem solar cell based on SMPV1 was constructed with a novel interlayer (or tunnel junction) consisting of bilayer conjugated polyelectrolyte, demonstrating an unprecedented PCE of 10.1%. These results strongly suggest solution-processed small molecular materials are excellent candidates for organic solar cells.

  19. Solution-processed small-molecule solar cells: breaking the 10% power conversion efficiency

    PubMed Central

    Liu, Yongsheng; Chen, Chun-Chao; Hong, Ziruo; Gao, Jing; (Michael) Yang, Yang; Zhou, Huanping; Dou, Letian; Li, Gang; Yang, Yang

    2013-01-01

    A two-dimensional conjugated small molecule (SMPV1) was designed and synthesized for high performance solution-processed organic solar cells. This study explores the photovoltaic properties of this molecule as a donor, with a fullerene derivative as an acceptor, using solution processing in single junction and double junction tandem solar cells. The single junction solar cells based on SMPV1 exhibited a certified power conversion efficiency of 8.02% under AM 1.5 G irradiation (100 mW cm−2). A homo-tandem solar cell based on SMPV1 was constructed with a novel interlayer (or tunnel junction) consisting of bilayer conjugated polyelectrolyte, demonstrating an unprecedented PCE of 10.1%. These results strongly suggest solution-processed small molecular materials are excellent candidates for organic solar cells. PMID:24285006

  20. THE CELL JUNCTION IN A LAMELLIBRANCH GILL CILIATED EPITHELIUM

    PubMed Central

    Satir, P.; Gilula, N. B.

    1970-01-01

    The junctional complex in the gill epithelium of the freshwater mussel (Elliptio complanatus) consists of an intermediary junction followed by a 2–3 µ long septate junction. Homologous and heterologous cell pairs are connected by this junction. After fixation with 1% OsO4 containing 1% potassium pyroantimonate, electron microscopy of the gill reveals deposits of electron-opaque precipitate, specifically and consistently localized along cellular membranes. In both junctional and nonjunctional membrane regions, the precipitate usefully outlines the convolutions without obliterating the 150 A intercellular space, which suggests the rarity or absence of either vertebrate-type gap or tight junctions along the entire cell border. The precipitate appears on the cytoplasmic side of the limiting unit membranes of frontal (F), laterofrontal (LF), intermediate (I), lateral (L), and postlateral (PL) cells. The membrane surfaces of certain vesicles of the smooth endoplasmic reticulum, of multivesicular bodies, and of mitochondrial cristae contain precipitate, as does the nucleolus. In other portions of the cell, precipitate is largely absent. The amount of over-all deposition is variable and depends on the treatment of the tissue prior to fixation. Deposition is usually enhanced by pretreatment with 40 mM NaCl as opposed to 40 mM KCl, which suggests that the precipitate is in part sodium pyroantimonate. Treatment with 0.2 mM ouabain does not enhance deposition. Regional differentiation of cell membranes with respect to their ability to precipitate pyroantimonate is found in at least three instances: (a) between the ciliary membranes and other portions of the cell membrane: the precipitate terminates abruptly at the ciliary base, (b) between the LF and I cell borders: the precipitate is asymmetric, favoring the LF side of the junction, and (c) between the septate junctional membrane and adjacent membrane: the precipitate occurs periodically throughout the septate junction

  1. Use of very-high-frequency plasmas to prepare a-Si:H-based triple-junction solar cells at high deposition rates: Annual technical status report, 11 March 1998--11 March 1999

    SciTech Connect

    Jones, S.J.; Liu, T.; Tsu, D.; Izu, M.

    1999-10-25

    This report describes work performed by Energy Conversion Devices, Inc. (ECD) during this phase of this subcontract. ECD researchers have made significant progress in advancing the very high frequency (VHF), high-rate technology. They demonstrated that 8.0% stable efficiencies can be achieved for a-Si:H cells whose i-layers are prepared at rates near 10 {angstrom}/s using the VHF technique. Presently, there is not a great difference in the performance of a-Si:H cells made using the VHF technique and i-layer deposition rates near 10 {angstrom}/s and that for cells made using the standard 13.56 MHz technique and rates near 1 {angstrom}/s in the same deposition system. In terms of the a-SiGe:H cells, researchers have completed a number of studies of devices with properties appropriate for middle-junction cells-that is, cells without Ag/ZnO back-reflectors having Voc values near 0.75V and Jsc values near 8.0 mA/cm{sup 2} when measured using AM1.5 light filtered using a 530-nm, low-band-pass filter. The stabilized proper ties for these cells prepared at i-layer rates near 10 {angstrom}/s are again similar to a-SiGe:H cells made using the same deposition hardware and the low-rate 13.56 MHz method. Establishing an initial 10.5% for a triple-junction cell whose i-layers are prepared at the high rates sets the baseline for ECD's future studies. The triple-junction cell degradation (10%--13%) with prolonged light soaking is similar to that regularly obtained for cells prepared at low i-layer deposition rates (1 {angstrom}/s). This is important because the use of high-rate methods to prepare i-layers typically leads to less-stable materials and cells. Increasing the buffer-layer deposition rate to 6 {angstrom}/s leads to nearly a 15-min decrease in the total deposition time, whereas the increase in the n-layer and p-layer deposition rates both decrease the total time by 5 and 5.8 min, respectively. Thus, besides the i-layer growth rates, increasing the buffer layer growth

  2. Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells

    SciTech Connect

    Geisz, John F.; Steiner, Myles A.; Garcia, Ivan; France, Ryan M.; McMahon, William E.; Osterwald, Carl R.; Friedman, Daniel J.

    2015-10-02

    The emission of light from each junction in a series-connected multijunction solar cell, we found, both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs of the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Furthermore, our techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements.

  3. Effect of copper impurity on polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1978-01-01

    The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

  4. Functionally Active Gap Junctions between Connexin 43-Positive Mesenchymal Stem Cells and Glioma Cells.

    PubMed

    Gabashvili, A N; Baklaushev, V P; Grinenko, N F; Levinskii, A B; Mel'nikov, P A; Cherepanov, S A; Chekhonin, V P

    2015-05-01

    The formation of functional gap junctions between mesenchymal stem cells and cells of low-grade rat glioma C6 cells was studied in in vitro experiments. Immunocytochemical analysis with antibodies to connexin 43 extracellular loop 2 showed that mesenchymal stem cells as well as C6 glioma cells express the main astroglial gap junction protein connexin 43. Analysis of migration activity showed that mesenchymal stem cells actively migrate towards C6 glioma cells. During co-culturing, mesenchymal stem cells and glioma C6 form functionally active gap junctions mediating the transport of cytoplasmic dye from glioma cells to mesenchymal stem cells in the opposite direction. Fluorometry showed that the intensity of transport of low-molecular substances through heterologous gap junctions between mesenchymal stem cells and glioma cells is similar to that through homologous gap junctions between glioma cells. This phenomenon can be used for the development of new methods of cell therapy of high-grade gliomas.

  5. Multijunction high voltage concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

    1981-01-01

    The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

  6. Solar cell power scanner

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.

    1971-01-01

    System locates high- and low-output regions in cadmium sulfide thin film photovoltaic cells. High resolution photograph shows conversion efficiency of each scanned area. X-Y recorder fed by amplified signal from solar cell also produces power contour map. Photo and map reveal high- and low-conversion-efficiency regions.

  7. Enhancing Solar Cell Efficiencies through 1-D Nanostructures

    PubMed Central

    2009-01-01

    The current global energy problem can be attributed to insufficient fossil fuel supplies and excessive greenhouse gas emissions resulting from increasing fossil fuel consumption. The huge demand for clean energy potentially can be met by solar-to-electricity conversions. The large-scale use of solar energy is not occurring due to the high cost and inadequate efficiencies of existing solar cells. Nanostructured materials have offered new opportunities to design more efficient solar cells, particularly one-dimensional (1-D) nanomaterials for enhancing solar cell efficiencies. These 1-D nanostructures, including nanotubes, nanowires, and nanorods, offer significant opportunities to improve efficiencies of solar cells by facilitating photon absorption, electron transport, and electron collection; however, tremendous challenges must be conquered before the large-scale commercialization of such cells. This review specifically focuses on the use of 1-D nanostructures for enhancing solar cell efficiencies. Other nanostructured solar cells or solar cells based on bulk materials are not covered in this review. Major topics addressed include dye-sensitized solar cells, quantum-dot-sensitized solar cells, and p-n junction solar cells.

  8. Parameterization of solar cells

    NASA Astrophysics Data System (ADS)

    Appelbaum, J.; Chait, A.; Thompson, D.

    1992-10-01

    The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

  9. Parameterization of solar cells

    NASA Technical Reports Server (NTRS)

    Appelbaum, J.; Chait, A.; Thompson, D.

    1992-01-01

    The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

  10. InP concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Ward, J. S.; Wanlass, M. W.; Coutts, T. J.; Emery, K. A.; Osterwald, C. R.

    1991-01-01

    The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy. A preliminary assessment of the effects of grid-collection distance and emitter-sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4 percent AM0 (24.3 percent direct) at 25 C are fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.

  11. Liquid junction schottky barrier solar cell

    DOEpatents

    Williams, Richard

    1980-01-01

    A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.

  12. Advanced Solar Cells for Satellite Power Systems

    NASA Technical Reports Server (NTRS)

    Flood, Dennis J.; Weinberg, Irving

    1994-01-01

    The multiple natures of today's space missions with regard to operational lifetime, orbital environment, cost and size of spacecraft, to name just a few, present such a broad range of performance requirements to be met by the solar array that no single design can suffice to meet them all. The result is a demand for development of specialized solar cell types that help to optimize overall satellite performance within a specified cost range for any given space mission. Historically, space solar array performance has been optimized for a given mission by tailoring the features of silicon solar cells to account for the orbital environment and average operating conditions expected during the mission. It has become necessary to turn to entirely new photovoltaic materials and device designs to meet the requirements of future missions, both in the near and far term. This paper will outline some of the mission drivers and resulting performance requirements that must be met by advanced solar cells, and provide an overview of some of the advanced cell technologies under development to meet them. The discussion will include high efficiency, radiation hard single junction cells; monolithic and mechanically stacked multiple bandgap cells; and thin film cells.

  13. A simple theory of back surface field /BSF/ solar cells

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1978-01-01

    A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

  14. Progress towards a 30% efficient GaInP/Si tandem solar cells

    SciTech Connect

    Essig, Stephanie; Ward, Scott; Steiner, Myles A.; Friedman, Daniel J.; Geisz, John F.; Stradins, Paul; Young, David L.

    2015-08-28

    The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.

  15. Progress towards a 30% efficient GaInP/Si tandem solar cells

    DOE PAGESBeta

    Essig, Stephanie; Ward, Scott; Steiner, Myles A.; Friedman, Daniel J.; Geisz, John F.; Stradins, Paul; Young, David L.

    2015-08-28

    The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved bymore » using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.« less

  16. Device Modeling and Characterization for CIGS Solar Cells

    NASA Astrophysics Data System (ADS)

    Song, Sang Ho

    We studied the way to achieve high efficiency and low cost of CuIn1-xGaxSe2 (CIGS) solar cells. The Fowler-Nordheim (F-N) tunneling currents at low bias decreased the shunt resistances and degraded the fill factor and efficiency. The activation energies of majority traps were directly related with F-N tunneling currents by the energy barriers. Air anneals decreased the efficiency from 7.74% to 5.18% after a 150 °C, 1000 hour anneal. The decrease of shunt resistance due to F-N tunneling and the increase of series resistance degrade the efficiencies of solar cells. Air anneal reduces the free carrier densities by the newly generated Cu interstitial defects (Cui). Mobile Cui defects induce the metastability in CIGS solar cell. Since oxygen atoms are preferred to passivate the Se vacancies thus Cu interstitial defects explains well metastability of CIGS solar cells. Lattice mismatch and misfit stress between layers in CIGS solar cells can explain the particular effects of CIGS solar cells. The misfits of 35.08° rotated (220/204) CIGS to r-plane (102) MoSe2 layers are 1% ˜ -4% lower than other orientation and the lattice constants of two layers in short direction are matched at Ga composition x=0.35. This explains well the preferred orientation and the maximum efficiency of Ga composition effects. Misfit between CIGS and CdS generated the dislocations in CdS layer as the interface traps. Thermionic emission currents due to interface traps limit the open circuit voltage at high Ga composition. The trap densities were calculated by critical thickness and dislocation spacing and the numerical device simulation results were well matched with the experimental results. A metal oxide broken-gap p-n heterojunction is suggested for tunnel junction for multi-junction polycrystalline solar cells and we examined the characteristics of broken-gap tunnel junction by numerical simulation. Ballistic transport mechanism explains well I-V characteristics of broken-gap junction. P

  17. Solar Cells and Photovoltaics

    NASA Astrophysics Data System (ADS)

    Irvine, Stuart

    Photovoltaic solar cells are gaining wide acceptance for producing clean, renewable electricity. This has been based on more than 40 years of research that has benefited from the revolution in silicon electronics and compound semiconductors in optoelectronics. This chapter gives an introduction into the basic science of photovoltaic solar cells and the challenge of extracting the maximum amount of electrical energy from the available solar energy. In addition to the constraints of the basic physics of these devices, there are considerable challenges in materials synthesis. The latter has become more prominent with the need to reduce the cost of solar module manufacture as it enters mainstream energy production. The chapter is divided into sections dealing with the fundamentals of solar cells and then considering five very different materials systems, from crystalline silicon through to polycrystalline thin films. These materials have been chosen because they are all in production, although some are only in the early stages of production. Many more materials are being considered in research and some of the more exciting, polymer and dye-sensitised cells are mentioned in the conclusions. However, there is insufficient space to give these very active areas of research the justice they deserve. I hope the reader will feel sufficiently inspired by this topic to read further and explore one of the most exciting areas of semiconductor science. The need for high-volume production at low cost has taken the researcher along paths not normally considered in semiconductor devices and it is this that provides an exciting challenge.

  18. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  19. Flexible Solar Cells

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Solar cell "modules" are plastic strips coated with thin films of photovoltaic silicon that collect solar energy for instant conversion into electricity. Lasers divide the thin film coating into smaller cells to build up voltage. Developed by Iowa Thin Film Technologies under NASA and DOE grants, the modules are used as electrical supply for advertising displays, battery rechargers for recreational vehicles, and to power model airplanes. The company is planning other applications both in consumer goods and as a power source in underdeveloped countries.

  20. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Carter, J. R., Jr.; Tada, H. Y.

    1973-01-01

    A method is presented for predicting the degradation of a solar array in a space radiation environment. Solar cell technology which emphasizes the cell parameters that degrade in a radiation environment, is discussed along with the experimental techniques used in the evaluation of radiation effects. Other topics discussed include: theoretical aspects of radiation damage, methods for developing relative damage coefficients, nature of the space radiation environment, method of calculating equivalent fluence from electron and proton energy spectrums and relative damage coefficients, and comparison of flight data with estimated degradation.

  1. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  2. Determination of series resistance of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving

    1991-01-01

    The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

  3. Making Ultrathin Solar Cells

    NASA Technical Reports Server (NTRS)

    Cogan, George W.; Christel, Lee A.; Merchant, J. Thomas; Gibbons, James F.

    1991-01-01

    Process produces extremely thin silicon solar cells - only 50 micrometers or less in thickness. Electrons and holes have less opportunity to recombine before collected at cell surfaces. Efficiency higher and because volume of silicon small, less chance of radiation damage in new cells. Initial steps carried out at normal thickness to reduce breakage and avoid extra cost of special handling. Cells then thinned mechanically and chemically. Final cell includes reflective layer on back surface. Layer bounces unabsorbed light back into bulk silicon so it absorbs and produces useful electrical output.

  4. Treponema pallidum Invades Intercellular Junctions of Endothelial Cell Monolayers

    NASA Astrophysics Data System (ADS)

    Thomas, D. Denee; Navab, Mahamad; Haake, David A.; Fogelman, Alan M.; Miller, James N.; Lovett, Michael A.

    1988-05-01

    The pathogenesis of syphilis reflects invasive properties of Treponema pallidum, but the actual mode of tissue invasion is unknown. We have found two in vitro parallels of treponemal invasiveness. We tested whether motile T. pallidum could invade host cells by determining the fate of radiolabeled motile organisms added to a HeLa cell monolayer; 26% of treponemes associated with the monolayer in a trypsin-resistant niche, presumably between the monolayer and the surface to which it adhered, but did not attain intracellularity. Attachment of T. pallidum to cultured human and rabbit aortic and human umbilical vein endothelial cells was 2-fold greater than to HeLa cells. We added T. pallidum to aortic endothelial cells grown on membrane filters under conditions in which tight intercellular junctions had formed. T. pallidum was able to pass through the endothelial cell monolayers without altering tight junctions, as measured by electrical resistance. In contrast, heat-killed T. pallidum and the nonpathogen Treponema phagedenis biotype Reiter failed to penetrate the monolayer. Transmission electron micrographs of sections of the monolayer showed T. pallidum in intercellular junctions. Our in vitro observations suggest that these highly motile spirochetes may leave the circulation by invading the junctions between endothelial cells.

  5. Hot electron plasmon-protected solar cell.

    PubMed

    Kong, J; Rose, A H; Yang, C; Wu, X; Merlo, J M; Burns, M J; Naughton, M J; Kempa, K

    2015-09-21

    A solar cell based on a hot electron plasmon protection effect is proposed and made plausible by simulations, non-local modeling of the response, and quantum mechanical calculations. In this cell, a thin-film, plasmonic metamaterial structure acts as both an efficient photon absorber in the visible frequency range and a plasmonic resonator in the IR range, the latter of which absorbs and protects against phonon emission the free energy of the hot electrons in an adjacent semiconductor junction. We show that in this structure, electron-plasmon scattering is much more efficient than electron-phonon scattering in cooling-off hot electrons, and the plasmon-stored energy is recoverable as an additional cell voltage. The proposed structure could become a prototype of a new generation of high efficiency solar cells. PMID:26406739

  6. New approaches for high-efficiency solar cells. Final report

    SciTech Connect

    Bedair, S M; El-Masry, N A

    1997-12-01

    This report summarizes the activities carried out in this subcontract. These activities cover, first the atomic layer epitaxy (ALE) growth of GaAs, AlGaAs and InGaP at fairly low growth temperatures. This was followed by using ALE to achieve high levels of doping both n-type and p-type required for tunnel junctions (Tj) in the cascade solar cell structures. Then the authors studied the properties of AlGaAs/InGaP and AlGaAs/GaAs tunnel junctions and their performances at different growth conditions. This is followed by the use of these tunnel junctions in stacked solar cell structures. The effect of these tunnel junctions on the performance of stacked solar cells was studied at different temperatures and different solar fluences. Finally, the authors studied the effect of different types of black surface fields (BSF), both p/n and n/p GaInP solar cell structures, and their potential for window layer applications. Parts of these activities were carried in close cooperation with Dr. Mike Timmons of the Research Triangle Institute.

  7. Energy yield determination of concentrator solar cells using laboratory measurements

    NASA Astrophysics Data System (ADS)

    Geisz, John F.; García, Iván; McMahon, William E.; Steiner, Myles A.; Ochoa, Mario; France, Ryan M.; Habte, Aron; Friedman, Daniel J.

    2015-09-01

    The annual energy conversion efficiency is calculated for a four junction inverted metamorphic solar cell that has been completely characterized in the laboratory at room temperature using measurements fit to a comprehensive optoelectronic model of the multijunction solar cells. A simple model of the temperature dependence is used predict the performance of the solar cell under varying temperature and spectra characteristic of Golden, CO for an entire year. The annual energy conversion efficiency is calculated by integrating the predicted cell performance over the entire year. The effects of geometric concentration, CPV system thermal characteristics, and luminescent coupling are highlighted.

  8. Inversion layer solar cell fabrication and evaluation. [measurement of response of inversion layer solar cell to light of different wavelengths

    NASA Technical Reports Server (NTRS)

    Call, R. L.

    1973-01-01

    Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) applying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

  9. V-grooved silicon solar cells

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.; Brandhorst, H. W.

    1975-01-01

    Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces have been made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80% of those collected in the valleys.

  10. V-grooved silicon solar cells

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.; Brandhorst, H. W., Jr.

    1975-01-01

    Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces were made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80 percent of those collected in the valleys.

  11. Metamorphic III–V Solar Cells: Recent Progress and Potential

    SciTech Connect

    Garcia, Ivan; France, Ryan M.; Geisz, John F.; McMahon, William E.; Steiner, Myles A.; Johnston, Steve; Friedman, Daniel J.

    2016-01-01

    Inverted metamorphic multijunction solar cells have been demonstrated to be a pathway to achieve the highest photovoltaic (PV) conversion efficiencies. Attaining high-quality lattice-mismatched (metamorphic) semiconductor devices is challenging. However, recent improvements to compositionally graded buffer epitaxy and junction structures have led to the achievement of high-quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. For this high material quality, photon recycling is significant, and therefore, the optical environment of the solar cell becomes important. In this paper, we first present recent progress and performance results for 1- and 0.7-eV GaInAs solar cells grown on GaAs substrates. Then, an electrooptical model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that the quality of 1-eV subcells is such that further improving its electronic quality does not produce significant Voc increases in the four-junction inverted metamorphic subcells, unless a back reflector is used to enhance photon recycling, which would significantly complicate the structure. Conversely, improving the electronic quality of the 0.7-eV subcell would lead to significant Voc boosts, driving the progress of four-junction inverted metamorphic solar cells.

  12. Solution-processed anthradithiophene-PCBM p-n junction photovoltaic cells fabricated by using the photoprecursor method.

    PubMed

    Yamada, Hiroko; Yamaguchi, Yuji; Katoh, Ryuta; Motoyama, Takao; Aotake, Tatsuya; Kuzuhara, Daiki; Suzuki, Mitsuharu; Okujima, Tetsuo; Uno, Hidemitsu; Aratani, Naoki; Nakayama, Ken-ichi

    2013-12-25

    P-n junction solar cells based on anthradithiophene (ADT) as a p-type semiconductor were fabricated by using the photoprecursor method in which an α-diketone-type precursor was spin-coated and then transformed to ADT in situ by photoirradiation. Combination with PC71BM as an n-layer material led to 1.54% photoconversion efficiency.

  13. NASA Facts, Solar Cells.

    ERIC Educational Resources Information Center

    National Aeronautics and Space Administration, Washington, DC.

    The design and function of solar cells as a source of electrical power for unmanned space vehicles is described in this pamphlet written for high school physical science students. The pamphlet is one of the NASA Facts Science Series (each of which consists of four pages) and is designed to fit in the standard size three-ring notebook. Review…

  14. VEGF and Angiopoietin-1 exert opposing effects on cell junctions by regulating the Rho GEF Syx

    PubMed Central

    Ngok, Siu P.; Geyer, Rory; Liu, Miaoliang; Kourtidis, Antonis; Agrawal, Sudesh; Wu, Chuanshen; Seerapu, Himabindu Reddy; Lewis-Tuffin, Laura J.; Moodie, Karen L.; Huveldt, Deborah; Marx, Ruth; Baraban, Jay M.; Storz, Peter

    2012-01-01

    Vascular endothelial growth factor (VEGF) and Ang1 (Angiopoietin-1) have opposing effects on vascular permeability, but the molecular basis of these effects is not fully known. We report in this paper that VEGF and Ang1 regulate endothelial cell (EC) junctions by determining the localization of the RhoA-specific guanine nucleotide exchange factor Syx. Syx was recruited to junctions by members of the Crumbs polarity complex and promoted junction integrity by activating Diaphanous. VEGF caused translocation of Syx from cell junctions, promoting junction disassembly, whereas Ang1 maintained Syx at the junctions, inducing junction stabilization. The VEGF-induced translocation of Syx from EC junctions was caused by PKD1 (protein kinase D1)-mediated phosphorylation of Syx at Ser806, which reduced Syx association to its junctional anchors. In support of the pivotal role of Syx in regulating EC junctions, syx−/− mice had defective junctions, resulting in vascular leakiness, edema, and impaired heart function. PMID:23253477

  15. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  16. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

  17. Testicular cell junction: a novel target for male contraception.

    PubMed

    Lee, Nikki P Y; Wong, Elissa W P; Mruk, Dolores D; Cheng, C Yan

    2009-01-01

    Even though various contraceptive methods are widely available, the number of unwanted pregnancies is still on the rise in developing countries, pressurizing the already resource limited nations. One of the major underlying reasons is the lack of effective, low cost, and safe contraceptives for couples. During the past decade, some studies were performed using animal models to decipher if the Sertoli-germ cell junction in the testis is a target for male fertility regulation. Some of these study models were based on the use of hormones and/or chemicals to disrupt the hypothalamic-pituitary-testicular axis (e.g., androgen-based implants or pills) and others utilized a panel of chemical entities or synthetic peptides to perturb spermatogenesis either reversibly or non-reversibly. Among them, adjudin, a potential male contraceptive, is one of the compounds exerting its action on the unique adherens junctions, known as ectoplasmic specializations, in the testis. Since the testis is equipped with inter-connected cell junctions, an initial targeting of one junction type may affect the others and these accumulative effects could lead to spermatogenic arrest. This review attempts to cover an innovative theme on how male infertility can be achieved by inducing junction instability and defects in the testis, opening a new window of research for male contraceptive development. While it will still take much time and effort of intensive investigation before a product can reach the consumable market, these findings have provided hope for better family planning involving men.

  18. Space solar cell technology development - A perspective

    NASA Technical Reports Server (NTRS)

    Scott-Monck, J.

    1982-01-01

    The developmental history of photovoltaics is examined as a basis for predicting further advances to the year 2000. Transistor technology was the precursor of solar cell development. Terrestrial cells were modified for space through changes in geometry and size, as well as the use of Ag-Ti contacts and manufacture of a p-type base. The violet cell was produced for Comsat, and involved shallow junctions, new contacts, and an enhanced antireflection coating for better radiation tolerance. The driving force was the desire by private companies to reduce cost and weight for commercial satellite power supplies. Liquid phase epitaxial (LPE) GaAs cells are the latest advancement, having a 4 sq cm area and increased efficiency. GaAs cells are expected to be flight ready in the 1980s. Testing is still necessary to verify production techniques and the resistance to electron and photon damage. Research will continue in CVD cell technology, new panel technology, and ultrathin Si cells.

  19. Integral diode solar cells

    SciTech Connect

    Mardesich, W.; Gillanders, M.S.

    1984-05-01

    To achieve high power at minimum weight, innovative array designs are needed. In the case where shadows fall across a series element in a simple circuit, the effective power will be reduced or eliminated. The conventional method of eliminating this loss is the introduction of bypass diodes. This method increases cost and weight and reduces available surface area. An alternative solution to the shadowing problem is to use integral diode solar cells. The integral diode cell has a built-in diode on the back that protects the adjacent cell and passes the current if it is shadowed. This paper will describe the effort to produce the integral diode cells in a production facility with a minimum cost impact. The electrical characterization of the cell as well as the diode will be presented. These cells can be readily manufactured in a production facility using photoresist defined contacting process.

  20. Iron-copper metallization for flexible solar/cell arrays

    NASA Technical Reports Server (NTRS)

    Lavendel, H. W.

    1983-01-01

    The feasibility of a copper-base metallization for shallow-junction cells applied in flexible solar arrays in space is discussed. This type of metallization will reduce usage of precious metals (such as silver), increase case of bonding (by welding or by soldering) and eliminate heavy high Z interconnects (such as molybdenum). The main points of concern are stability against thermally induced diffusion of copper into silicon which causes degradation of shallow cell junctions, and low series resistance of the contact with semiconductor which promotes cell efficiency.

  1. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    SciTech Connect

    Uzu, Hisashi E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi; Nakano, Kunihiro; Meguro, Tomomi; Yamamoto, Kenji; Hernández, José Luis; Kim, Hui-Seon; Park, Nam-Gyu E-mail: npark@skku.edu

    2015-01-05

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cell or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.

  2. Tricellulin deficiency affects tight junction architecture and cochlear hair cells

    PubMed Central

    Nayak, Gowri; Lee, Sue I.; Yousaf, Rizwan; Edelmann, Stephanie E.; Trincot, Claire; Van Itallie, Christina M.; Sinha, Ghanshyam P.; Rafeeq, Maria; Jones, Sherri M.; Belyantseva, Inna A.; Anderson, James M.; Forge, Andrew; Frolenkov, Gregory I.; Riazuddin, Saima

    2013-01-01

    The two compositionally distinct extracellular cochlear fluids, endolymph and perilymph, are separated by tight junctions that outline the scala media and reticular lamina. Mutations in TRIC (also known as MARVELD2), which encodes a tricellular tight junction protein known as tricellulin, lead to nonsyndromic hearing loss (DFNB49). We generated a knockin mouse that carries a mutation orthologous to the TRIC coding mutation linked to DFNB49 hearing loss in humans. Tricellulin was absent from the tricellular junctions in the inner ear epithelia of the mutant animals, which developed rapidly progressing hearing loss accompanied by loss of mechanosensory cochlear hair cells, while the endocochlear potential and paracellular permeability of a biotin-based tracer in the stria vascularis were unaltered. Freeze-fracture electron microscopy revealed disruption of the strands of intramembrane particles connecting bicellular and tricellular junctions in the inner ear epithelia of tricellulin-deficient mice. These ultrastructural changes may selectively affect the paracellular permeability of ions or small molecules, resulting in a toxic microenvironment for cochlear hair cells. Consistent with this hypothesis, hair cell loss was rescued in tricellulin-deficient mice when generation of normal endolymph was inhibited by a concomitant deletion of the transcription factor, Pou3f4. Finally, comprehensive phenotypic screening showed a broader pathological phenotype in the mutant mice, which highlights the non-redundant roles played by tricellulin. PMID:23979167

  3. Single P-N junction tandem photovoltaic device

    DOEpatents

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2012-03-06

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  4. Single P-N junction tandem photovoltaic device

    DOEpatents

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  5. Phthalimide Copolymer Solar Cells

    NASA Astrophysics Data System (ADS)

    Xin, Hao; Guo, Xugang; Ren, Guoqiang; Kim, Felix; Watson, Mark; Jenekhe, Samson

    2010-03-01

    Photovoltaic properties of bulk heterojunction solar cells based on phthalimide donor-acceptor copolymers have been investigated. Due to the strong π-π stacking of the polymers, the state-of-the-art thermal annealing approach resulted in micro-scale phase separation and thus negligible photocurrent. To achieve ideal bicontinuous morphology, different strategies including quickly film drying and mixed solvent for film processing have been explored. In these films, nano-sale phase separation was achieved and a power conversion efficiency of 3.0% was obtained. Absorption and space-charge limited current mobility measurements reveal similar light harvesting and hole mobilities in all the films, indicating that the morphology is the dominant factor determining the photovoltaic performance. Our results demonstrate that for highly crystalline and/or low-solubility polymers, finding a way to prevent polymer aggregation and large scale phase separation is critical to realizing high performance solar cells.

  6. Nanowire Solar Cells

    NASA Astrophysics Data System (ADS)

    Garnett, Erik C.; Brongersma, Mark L.; Cui, Yi; McGehee, Michael D.

    2011-08-01

    The nanowire geometry provides potential advantages over planar wafer-based or thin-film solar cells in every step of the photoconversion process. These advantages include reduced reflection, extreme light trapping, improved band gap tuning, facile strain relaxation, and increased defect tolerance. These benefits are not expected to increase the maximum efficiency above standard limits; instead, they reduce the quantity and quality of material necessary to approach those limits, allowing for substantial cost reductions. Additionally, nanowires provide opportunities to fabricate complex single-crystalline semiconductor devices directly on low-cost substrates and electrodes such as aluminum foil, stainless steel, and conductive glass, addressing another major cost in current photovoltaic technology. This review describes nanowire solar cell synthesis and fabrication, important characterization techniques unique to nanowire systems, and advantages of the nanowire geometry.

  7. Quantum Dot Solar Cells

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  8. AlGaAs-GaAs cascade solar cell

    NASA Technical Reports Server (NTRS)

    Lamorte, M. F.; Abbott, D. H.

    1980-01-01

    Computer modeling studies are reported for a monolithic, two junction, cascade solar cell using the AlGaAs GaAs materials combination. An optimum design was obtained through a serial optimization procedure by which conversion efficiency is maximized for operation at 300 K, AM 0, and unity solar concentration. Under these conditions the upper limit on efficiency was shown to be in excess of 29 percent, provided surface recombination velocity did not exceed 10,000 cm/sec.

  9. Tandem junction amorphous semiconductor photovoltaic cell

    DOEpatents

    Dalal, V.L.

    1983-06-07

    A photovoltaic stack comprising at least two p[sup +]i n[sup +] cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p[sup +]i n[sup +] cells. 3 figs.

  10. Tandem junction amorphous semiconductor photovoltaic cell

    DOEpatents

    Dalal, Vikram L.

    1983-01-01

    A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

  11. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  12. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  13. Solar cell grid patterns

    NASA Technical Reports Server (NTRS)

    Yasui, R. K.; Berman, P. A. (Inventor)

    1976-01-01

    A grid pattern is described for a solar cell of the type which includes a semiconductive layer doped to a first polarity and a top counter-doped layer. The grid pattern comprises a plurality of concentric conductive grids of selected geometric shapes which are centered about the center of the exposed active surface of the counter-doped layer. Connected to the grids is one or more conductors which extend to the cell's periphery. For the pattern area, the grids and conductors are arranged in the pattern to minimize the maximum distance which any injected majority carriers have to travel to reach any of the grids or conductors. The pattern has a multiaxes symmetry with respect to the cell center to minimize the maximum temperature differentials between points on the cell surface and to provide a more uniform temperature distribution across the cell face.

  14. Solar-cell defect analyzer

    NASA Technical Reports Server (NTRS)

    Gauthier, M. K.; Miller, E. L.; Shumka, A.

    1980-01-01

    Laser-Scanning System pinpoints imperfections in solar cells. Entire solar panels containing large numbers of cells can be scanned. Although technique is similar to use of scanning electron microscope (SEM) to locate microscopic imperfections, it differs in that large areas may be examined, including entire solar panels, and it is not necessary to remove cover glass or encapsulants.

  15. High Performance Tandem Perovskite/Polymer Solar Cells

    NASA Astrophysics Data System (ADS)

    Liu, Yao; Bag, Monojit; Page, Zachariah; Renna, Lawrence; Kim, Paul; Choi, Jaewon; Emrick, Todd; Venkataraman, D.; Russell, Thomas

    Combining perovskites with other inorganic materials, such as copper indium gallium diselenide (CIGS) or silicon, is enabling significant improvement in solar cell device performance. Here, we demonstrate a highly efficient hybrid tandem solar cell fabricated through a facile solution deposition approach to give a perovskite front sub-cell and a polymer:fullerene blend back sub-cell. This methodology eliminates the adverse effects of thermal annealing during perovskite fabrication on polymer solar cells. The record tandem solar cell efficiency of 15.96% is 40% greater than the corresponding perovskite-based single junction device and 65% greater than the polymer-based single junction device, while mitigating deleterious hysteresis effects often associated with perovskite solar cells. The hybrid tandem devices demonstrate the synergistic effects arising from the combination of perovskite and polymer-based materials for solar cells. This work was supported by the Department of Energy-supported Energy Frontier Research Center at the University of Massachusetts (DE-SC0001087). The authors acknowledge the W.M. Keck Electron Microscopy.

  16. Solar-Cell String Conveyor

    NASA Technical Reports Server (NTRS)

    Frasch, W.; Ciavola, S.

    1982-01-01

    String-conveyor portion of solar-array assembly line holds silicon solar cells while assembled into strings and tested. Cells are transported collector-side-down, while uniform cell spacing and registration are maintained. Microprocessor on machine controls indexing of cells.

  17. A theoretical analysis of the current-voltage characteristics of solar cells

    NASA Technical Reports Server (NTRS)

    Hauser, J. R.; Dunbar, P. M.

    1974-01-01

    The current-voltage characteristics and efficiencies of solar cells are discussed. For one solar cell structure detailed curves are presented which include carrier densities, current densities, potential, and quasi-Fermi levels at different voltage levels both with and without optically generated carriers (AMO conditions). In addition some results are presented concerning the influence of various parameter variations such as lifetime, cell thickness, and high-low junction width on solar cell performance.

  18. Plastic Schottky barrier solar cells

    DOEpatents

    Waldrop, James R.; Cohen, Marshall J.

    1984-01-24

    A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

  19. Berkeley Lab Sheds Light on Improving Solar Cell Efficiency

    SciTech Connect

    Lawrence Berkeley National Laboratory

    2007-07-20

    Typical manufacturing methods produce solar cells with an efficiency of 12-15%; and 14% efficiency is the bare minimum for achieving a profit. In work performed at the Ernest Orlando Lawrence Berkeley National Laboratory (Berkeley, CA, 5 10-486-577 1)--a US Department of Energy national laboratory that conducts unclassified scientific research and is managed by the University of California--scientist Scott McHugo has obtained keen insights into the impaired performance of solar cells manufactured from polycrystalline silicon. The solar cell market is potentially vast, according to Berkeley Lab. Lightweight solar panels are highly beneficial for providing electrical power to remote locations in developing nations, since there is no need to build transmission lines or truck-in generator fuel. Moreover, industrial nations confronted with diminishing resources have active programs aimed at producing improved, less expensive solar cells. 'In a solar cell, there is a junction between p-type silicon and an n-type layer, such as diffused-in phosphorous', explained McHugo, who is now with Berkeley Lab's Accelerator and Fusion Research Division. 'When sunlight is absorbed, it frees electrons, which start migrating in a random-walk fashion toward that junction. If the electrons make it to the junction; they contribute to the cell's output of electric current. Often, however, before they reach the junction, they recombine at specific sites in the crystal' (and, therefore, cannot contribute to current output). McHugo scrutinized a map of a silicon wafer in which sites of high recombination appeared as dark regions. Previously, researchers had shown that such phenomena occurred not primarily at grain boundaries in the polycrystalline material, as might be expected, but more often at dislocations in the crystal. However, the dislocations themselves were not the problem. Using a unique heat treatment technique, McHugo performed electrical measurements to investigate the material

  20. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    NASA Technical Reports Server (NTRS)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  1. MIS and SIS solar cells on polycrystalline silicon

    SciTech Connect

    Cheek, G.; Mertens, R.

    1980-02-01

    MIS and SIS structured solar cells are receiving much attention in the photovoltaic community. Seemingly, these cells could be a viable alternative to thermally diffused p-n junctions for use on thin-film polycrystalline silicon substrates. This review describes MIS/SIS structured solar cells and the possible advantages of these structures for use with thin-film polycrystalline silicon. The results of efficiency calculations are presented. Also addressed are lifetime stability and fabrication techniques amenable to large scale production. Finally, the relative advantages and disadvantages of these cells and the results obtained are presented.

  2. Electron Radiation Damage of (alga) As-gaas Solar Cells

    NASA Technical Reports Server (NTRS)

    Loo, R.; Kamath, G. S.; Knechtli, R.

    1979-01-01

    Solar cells (2 cm by 2 cm (AlGa) As-GaAs cells) were fabricated and then subjected to irradiation at normal incidence by electrons. The influence of junction depth and n-type buffer layer doping level on the cell's resistance to radiation damage was investigated. The study shows that (1) a 0.3 micrometer deep junction results in lower damage to the cells than does a 0.5 micrometer junction, and (2) lowering the n buffer layer doping density does not improve the radiation resistance of the cell. Rather, lowering the doping density decreases the solar cell's open circuit voltage. Some preliminary thermal annealing experiments in vacuum were performed on the (AlGa)As-GaAs solar cells damaged by 1-MeV electron irradiation. The results show that cell performance can be expected to partially recover at 200 C with more rapid and complete recovery occurring at higher temperature. For a 0.5hr anneal at 400 C, 90% of the initial power is recovered. The characteristics of the (AlGa)As-GaAs cells both before and after irradiation are described.

  3. Modeling of thin, back-wall silicon solar cells

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.

    1979-01-01

    The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

  4. Vacuum Pickup for Solar Cells

    NASA Technical Reports Server (NTRS)

    Frasch, W.

    1982-01-01

    Flexible vacuum cups that handle solar cells conform to shape or cell back surfaces. Cups lift vertically, without tilt that might cause stress on interconnections, inaccurate placement, or damage to cells. Vacuum source is venturi valve mounted on air manifold.

  5. CHLORAL HYDRATE DECREASES GAP JUNCTION COMMUNICATION IN RAT LIVER EPITHELIAL CELLS

    EPA Science Inventory

    Chloral hydrate decreases gap junction communication in rat liver epithelial cells

    Gap junction communication (GJC) is involved in controlling cell proliferation and differentiation. Connexins (Cx) that make up these junctions are composed of a closely related group of m...

  6. Quantum-Tuned Multijunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Koleilat, Ghada I.

    Multijunction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. In this dissertation, we first report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device's collecting electrodes---the heterointerface with electron accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact---for maximum efficiency. Room-temperature processing enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low thermal-budget larger-bandgap front cell. We report an electrode strategy that enables a depleted heterojunction CQD PV device to be fabricated entirely at room temperature. We develop a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells suitable for use as the back junction in tandem solar cells. We further report in this work the first efficient CQD tandem solar cells. We use a graded recombination layer (GRL) to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell. The recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We conclude our dissertation by presenting the generalized conditions for design of efficient graded recombination layer solar devices. We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the

  7. Diffused P+-N solar cells in bulk GaAs

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1982-01-01

    Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.

  8. Recent progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, D. J.; Jain, R. K.; Swartz, C. K.

    1991-01-01

    Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap component. Concentrator cells include the three terminal multibandgap cell and n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n + p InP and ITO/InP cells in space on board the LIPS 3 satellite.

  9. Recent progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brinker, D. J.; Jain, R. K.; Swartz, C. K.

    1991-01-01

    Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap, component. Concentrator cells include the three terminal multibandgap cell and an n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n+p InP and ITO/InP cells in space on board the LIPS 3 satellite.

  10. Solar cell module lamination process

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Aceves, Randy C.

    2002-01-01

    A solar cell module lamination process using fluoropolymers to provide protection from adverse environmental conditions and thus enable more extended use of solar cells, particularly in space applications. A laminate of fluoropolymer material provides a hermetically sealed solar cell module structure that is flexible and very durable. The laminate is virtually chemically inert, highly transmissive in the visible spectrum, dimensionally stable at temperatures up to about 200.degree. C. highly abrasion resistant, and exhibits very little ultra-violet degradation.

  11. Photoelectric solar cell array

    SciTech Connect

    Lidorenko, N.S.; Afian, V.V.; Martirosian, R.G.; Ryabikov, S.V.; Strebkov, D.S.; Vartanian, A.V.

    1983-11-29

    A photoelectric solar cell device comprises a dispersing element exposed to the sun's radiation and followed in the optical path by photocells having different spectral sensitivities. Each photocell has its working surface so oriented that the light beam with the wavelength corresponding to the maximum spectral sensitivity of that photocell impinges on its working surface. The dispersing element is a hologram representing light sources with different wavelengths. The photocells are positioned in the image planes of the light sources producing the light beams of the corresponding wavelengths.

  12. Floating emitter solar cell

    NASA Technical Reports Server (NTRS)

    Chih, Sah (Inventor); Cheng, Li-Jen (Inventor)

    1987-01-01

    A front surface contact floating emitter solar cell transistor is provided in a semiconductor body (n-type), in which floating emitter sections (p-type) are diffused or implanted in the front surface. Between the emitter sections, a further section is diffused or implanted in the front surface, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n+, or as a collector for the adjacent emitter sections.

  13. Intercellular junctions between palisade nerve endings and outer root sheath cells of rat vellus hairs.

    PubMed

    Kaidoh, T; Inoué, T

    2000-05-15

    Hair follicles have a longitudinal set of sensory nerve endings called palisade nerve endings (PN). We examined the junctional structures between the PN and outer root sheath (ORS) cells of hair follicles in the rat external ear. Transmission electron microscopy of serial thin sections showed that the processes of the ORS cells penetrated the basal lamina of the hair follicle, forming intercellular junctions with the PN (PN-ORS junctions). Two types of junctions were found: junctions between nerve endings and ORS cells (N-ORS junctions) and those between Schwann cell processes and ORS cells (S-ORS junctions). The N-ORS junctions had two subtypes: 1) a short process or small eminence of the ORS cell was attached to the nerve ending (type I); or 2) a process of the ORS cell was invaginated into the nerve ending (type II). The S-ORS junctions also had two subtypes: 1) a short process or small eminence of the ORS cell was abutted on the Schwann cell process (type I); or 2) a process of the ORS cell was invaginated into the Schwann cell process (type II). Vesicles, coated pits, coated vesicles, and endosomes were sometimes seen in nerve endings, Schwann cells, and ORS cells near the junctions. Computer-aided reconstruction of the serial thin sections displayed the three-dimensional structure of these junctions. These results suggested that the PN-ORS junctions provided direct relationships between the PN and ORS in at least four different patterns. The discovery of these junctions shows the PN-ORS relationship to be closer than previously realized. We speculate that these junctions may have roles in attachment of the PN to the ORS, contributing to increases in the sensitivity of the PN, and in chemical signaling between the PN and ORS.

  14. "Pelled-film" solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1980-01-01

    Cells are lighter and less expensive than conventional cells. GaAs cells are deposited on GaAs substrate coated with thin etchable layer that allows completed cell film to be peeled away from substrate. At estimated conversion of 18 percent, array of cells delivers about 1 kW of electricity per kilogram of cell material. Blanket of cells delivers energy at power-to-weight ratio about 4 times that of conventional 2-mil (0.5-mm) silicon solar cells. GaAs solar cells have better radiation resistance than silicon cells.

  15. Cell membrane and cell junctions in differentiation of preimplanted mouse embryos.

    PubMed

    Izquierdo, L; Fernández, S; López, T

    1976-12-01

    Cell membrane and cell junctions in differentiation of preimplanted mouse embryos, (membrana celular y uniones celulares en la diferenciación del embrión de ratón antes de la implantación). Arch. Biol. Med. Exper. 10: 130-134, 1976. The development of cell junctions that seal the peripheral blastomeres could be a decisive step in the differentiation of morulae into blastocysts. The appearance of these junctions is studied by electron microscopy of late morulae and initial blastocysts. Zonulae occludentes as well as impermeability to lanthanum emulsion precedes the appearance of the blastocel and hence might be considered as one of its necessary causes.

  16. Coplanar back contacts for thin silicon solar cells

    NASA Technical Reports Server (NTRS)

    Storti, G.; Scheinine, A.; Whitehouse, D.; Wohlgemuth, J.; Wrigley, C.; Giuliano, M.

    1981-01-01

    The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.

  17. The Pd2Si - /Pd/ - Ni - solder plated metallization system for silicon solar cells

    NASA Technical Reports Server (NTRS)

    Coleman, M. G.; Pryor, R. A.; Sparks, T. G.

    1978-01-01

    The rationale and application of a plated metal system, Pd2Si Pd - Ni - solder, is presented. This metallization system is particularly useful on shallow p-n junction solar cells. The advantages of such plated solar cell contacts are discussed. A process sequence for applying the metallization system is outlined. A specific example is presented, including chemical plating solution formulations and detailed process step descriptions. Electrical test data for solar cells metallized with the palladium-nickel-solder system are provided.

  18. Development of an all-metal thick film cost affective metallization system for solar cells

    NASA Technical Reports Server (NTRS)

    Ross, B.

    1981-01-01

    An economical thick film solar cell contact for high volume production of low cost silicon solar array modules was investigated. All metal screenable pastes using base metals were studied. Solar cells with junction depths varying by a factor of 3.3, with and without a deposited oxide coating were used. Cells were screened and fired by a two step firing process. Adhesion and metallurgical results are unsatisfactory. No electrical information is obtained due to inadequate contact adhesion.

  19. Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M. (Inventor)

    1981-01-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

  20. Schottky barrier solar cell

    SciTech Connect

    Stirn, R.J.; Yeh, Y.C.M.

    1981-07-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. Official Gazette of the U.S. Patent and Trademark Office