Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, P.; Yu, G. Q.; Wei, H. X.

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E {sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process,more » opening an additional conductance channel and thus enhancing the total conductance.« less

Chemical nature of the barrier in Pb/YBa2Cu3O(7-x) tunneling structures

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Foote, M. C.; Hunt, B. D.; Bajuk, L.

1991-01-01

Several reports of reproducible tunneling measurements on YBa2Cu3O(7-x) thin films or single crystals with a Pb counterelectrode have recently appeared. The nature of the tunnel barrier, formed by air exposure, in these structures has been unknown. In the present work, the chemical nature of the tunnel barrier is studied with X-ray photoelectron spectroscopy (XPS). Laser-ablated films grown on LaAlO3 which have been chemically etched and heated in air are found to form nonsuperconducting surface Ba species, evident in an increase of the high binding energy Ba 3d and O 1s signals. A deposited Pb film about 10 A thick is found to be oxidized, and Cu(+2) is partially reduced to Cu(+1). The tunneling barrier thus appears to consist of species resulting from a combination of the air exposure and a reaction between the superconductor and the deposited Pb counterelectrode.

Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation

NASA Astrophysics Data System (ADS)

Kukita, Kentaro; Uechi, Tadayoshi; Shimokawa, Junji; Goto, Masakazu; Yokota, Yoshinori; Kawanaka, Shigeru; Tanamoto, Tetsufumi; Tanimoto, Hiroyoshi; Takagi, Shinichi

2018-04-01

Planar single-gate (SG) silicon (Si) tunnel field effect transistors (TFETs) are attracting interest for ultra-low voltage operation and CMOS applications. For the achievement of subthreshold swing (S.S.) less than thermal limit of Si MOSFETs (S.S. = 60 mV/decade at 300 K), previous studies have proposed the formation of a pocket region, which needs very difficult implantation process. In this work, a planar SG Si TFET without pocket was proposed by using the technology computer-aided design (TCAD) simulations. An average S.S. of less than 60 mV/decade for 0.3 V (= V gs = V ds) operation was obtained. It is found that both low average S.S. (= 27.8 mV/decade) and high on-current I on (= 3.8 µA/µm) are achieved without pocket doping by scaling the equivalent oxide thickness (EOT) and increasing the gate-to-source overlap length L ov.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

NASA Astrophysics Data System (ADS)

Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-05-01

In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

Verification and Validation of KBS with Neural Network Components

NASA Technical Reports Server (NTRS)

Wen, Wu; Callahan, John

1996-01-01

Artificial Neural Network (ANN) play an important role in developing robust Knowledge Based Systems (KBS). The ANN based components used in these systems learn to give appropriate predictions through training with correct input-output data patterns. Unlike traditional KBS that depends on a rule database and a production engine, the ANN based system mimics the decisions of an expert without specifically formulating the if-than type of rules. In fact, the ANNs demonstrate their superiority when such if-then type of rules are hard to generate by human expert. Verification of traditional knowledge based system is based on the proof of consistency and completeness of the rule knowledge base and correctness of the production engine.These techniques, however, can not be directly applied to ANN based components.In this position paper, we propose a verification and validation procedure for KBS with ANN based components. The essence of the procedure is to obtain an accurate system specification through incremental modification of the specifications using an ANN rule extraction algorithm.

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

NASA Astrophysics Data System (ADS)

Alimardani, N.; Conley, J. F.

2013-09-01

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

NASA Astrophysics Data System (ADS)

Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

2016-03-01

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhusan Singh, Braj; Chaudhary, Sujeet, E-mail: sujeetc@physics.iitd.ac.in

The effect of annealing on the changes in the inelastic tunneling contributions in tunneling conductance of ion beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions (MTJs) is investigated. The inelastic contributions are evaluated using hopping conduction model of Glazman and Matveev in the temperature range of 25–300 K. The hopping through number of series of localized states present in the barrier due to structural defects increases from 9 (in as deposited MTJ) to 18 after annealing (at 200 °C/1 h); although no changes in the interface roughness of CoFe-MgO and MgO-NiFe interfaces are observed as revealed by the x-ray reflectance studies on planar MTJs. Themore » bias dependence of tunneling magnetoresistance (TMR) at 25 K is found to get improved after annealing as revealed by the value V{sub 1/2} (the bias value at which the TMR reaches to half of its value at nearly zero bias); which is 78 mV (in MTJ annealed at 200 °C/1 h) 2.5 times the value of 33 mV (in as deposited MTJ). At 25 K the inelastic tunneling spectra revealed the presence of zero bias anomaly and magnon excitations in the range of 10–15 mV. While the barrier height exhibited a strong temperature dependence with nearly 100% increase from the value at 300 K to 25 K, the temperature dependence of TMR becomes steep after annealing.« less

Quantum Tunneling of Magnetization in Ultrasmall Half-Metallic V3O4 Quantum Dots: Displaying Quantum Superparamagnetic State

PubMed Central

Xiao, Chong; Zhang, Jiajia; Xu, Jie; Tong, Wei; Cao, Boxiao; Li, Kun; Pan, Bicai; Su, Haibin; Xie, Yi

2012-01-01

Quantum tunneling of magnetization (QTMs), stemming from their importance for understanding materials with unconventional properties, has continued to attract widespread theoretical and experimental attention. However, the observation of QTMs in the most promising candidates of molecular magnets and few iron-based compounds is limited to very low temperature. Herein, we first highlight a simple system, ultrasmall half-metallic V3O4 quantum dots, as a promising candidate for the investigation of QTMs at high temperature. The quantum superparamagnetic state (QSP) as a high temperature signature of QTMs is observed at 16 K, which is beyond absolute zero temperature and much higher than that of conventional iron-based compounds due to the stronger spin-orbital coupling of V3+ ions bringing high anisotropy energy. It is undoubtedly that this ultrasmall quantum dots, V3O4, offers not only a promising candidate for theoretical understanding of QTMs but also a very exciting possibility for computers using mesoscopic magnets. PMID:23091695

Comparison of wind tunnel and field experiments to measure potential deposition of fenpropimorph following volatilisation from treated crops.

PubMed

Hassink, Jan; Platz, Klaus; Stadler, Reinhold; Zangmeister, Werner; Fent, Gunnar; Möndel, Martin; Kubiak, Roland

2007-02-01

The potential for short-range transport via air, i.e. volatilisation from the area of application and subsequent deposition on adjacent non-target areas, was investigated for the fungicide fenpropimorph in a wind tunnel system and under outdoor conditions in a higher-tier field study. Fenpropimorph 750 g L(-1) EC was applied post-emergence to cereal along with a reference standard lindane EC. Stainless steel containers of water were placed at different distances downwind of the application area to trap volatile residues during a study period of 24 h following application. Meteorological conditions in the wind tunnel as well as on the field were constantly monitored during the study period. The wind tunnel system was a partly standardised system on a semi-field scale, i.e. wind direction and wind speed (2 m s(-1)) were constant, but temperature and humidity varied according to the conditions outside. In the field experiment, the average wind speed over the 24 h study period was 3 m s(-1) and no rainfall occurred. Three different measuring lines were installed on the non-target area beside the treated field to cover potential variations in the wind direction. However, no significant differences were observed since the wind direction was generally constant. Fenpropimorph was detected in minor amounts of 0.01-0.05% of the applied material in the wind tunnel experiment. Even at a distance of 1 m beside the treated field, no significant deposition occurred (0.04% of applied material after 24 h). In the field, less than 0.1% of the applied fenpropimorph was detected at 0 m directly beside the treated field. At 5 m distance the deposition values were below 0.04%, and at 20 m distance about 0.01%. In general, the amounts of deposited fenpropimorph detected in the partly standardised wind tunnel system and the higher-tier field study were in good agreement.

Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition

NASA Astrophysics Data System (ADS)

Nair, Hari P.; Crook, Adam M.; Bank, Seth R.

2010-05-01

We report ErAs nanoparticle-enhanced tunnel junctions grown on GaAs with low specific resistances (<2×10-4 Ω cm-2), approximately tenfold lower than previous reports. A reduction in specific resistance was achieved by modifying the ErAs nanoparticle morphology through the molecular beam epitaxial growth conditions, particularly lower growth temperatures. A further investigation of the variation in tunnel junction resistance with the amount of ErAs deposited and growth temperature shows that nanoparticle surface coverage may not be the only factor determining tunnel junction resistance.

Subsoil denitrification experiments at KBS MSU

NASA Astrophysics Data System (ADS)

Shcherbak, I.; Robertson, G. P.

2011-12-01

Denitrification is a major soil process that produces nitrous oxide (N2O), a potent greenhouse gas. Most research on denitrification has, for various reasons, concentrated on the top soil layer, ignoring depths below 10-20 cm. Although denitrification is considered to be the most active in top soil, this layer usually accounts for only 10% of the total volume of the soil profile. Our research addresses the questions: How significant is denitrification at depth in the soil profile and how does it vary with land-use? We have two field experiments at the W. K. Kellogg Biological Station (KBS) in southwest Michigan: 1) tilled versus no-tillage rainfed fertilized corn and 2) rainfed versus irrigated corn at six fertilizer levels, with N2O concentrations measured at 10 depths (3, 7, 15, 20, 25, 50, 55, 70, 75, 125 cm) and 5 depths (10, 20, 30, 50, 75 cm), respectively , along with N2O fluxes to the atmosphere in both. Soil environment data (texture, water content, temperature and nitrate content) represent a combination of measured values and simulated values using the SALUS (System Approach to Land Use Sustainability) model. We used diffusion and water balance equations that incorporated carbon dioxide concentrations and flux data collected simultaneously with N2O to determine diffusivity as a function of water content and soil temperature. We used the same diffusivity to obtain N2O production as function of moisture, temperature, and nitrate availability. Further validation of the production function was performed with data collected from the KBS Long-Term Ecological Research (LTER) site , where we also measured belowground concentrations during the 2011 growing season.

Helicopter noise research at the Langley V/STOL tunnel

NASA Technical Reports Server (NTRS)

Hoad, D. R.; Green, G. C.

1978-01-01

The noise generated from a 1/4-scale AH-1G helicopter configuration was investigated in the Langley V/STOL tunnel. Microphones were installed in positions scaled to those for which flight test data were available. Model and tunnel conditions were carefully set to properly scaled flight conditions. Data presented indicate a high degree of similarity between model and flight test results. It was found that the pressure time history waveforms are very much alike in shape and amplitude. Blade slap when it occurred seemed to be generated in about the same location in the rotor disk as on the flight vehicle. If model and tunnel conditions were properly matched, including inflow turbulence characteristics, the intensity of the blade-slap impulse seemed to correlate well with flight.

An experimental study of several wind tunnel wall configurations using two V/STOL model configurations. [low speed wind tunnels

NASA Technical Reports Server (NTRS)

Binion, T. W., Jr.

1975-01-01

Experiments were conducted in the low speed wind tunnel using two V/STOL models, a jet-flap and a jet-in-fuselage configuration, to search for a wind tunnel wall configuration to minimize wall interference on V/STOL models. Data were also obtained on the jet-flap model with a uniform slotted wall configuration to provide comparisons between theoretical and experimental wall interference. A test section configuration was found which provided some data in reasonable agreement with interference-free results over a wide range of momentum coefficients.

Atomic layer deposition of Al2O3 on V2O5 xerogel film for enhanced lithium-ion intercalation stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Dawei; Liu, Yanyi; Candelaria, Stephanie L.

V2O5 xerogel films were fabricated by casting V2O5 sols onto fluorine-doped tin oxide glass substrates at room temperature. Five, ten and twenty atomic layers of Al2O3 were grown onto as-fabricated films respectively. The bare film and Al2O3-deposited films all exhibited hydrous V2O5 phase only. Electrochemical impedance spectroscopy study revealed increased surface charge-transfer resistance of V2O5 films as more Al2O3 atomic layers were deposited. Lithium-ion intercalation tests at 600 mAg_1 showed that bare V2O5 xerogel film possessed high initial discharge capacity of 219 mAhg_1 but suffered from severe capacity degradation, i.e., having only 136 mAhg_1 after 50 cycles. After deposition ofmore » ten atomic layers of Al2O3, the initial discharge capacity was 195 mAhg_1 but increased over cycles before stabilizing; after 50 cycles, the discharge capacity was as high as 225 mAhg_1. The noticeably improved cyclic stability of Al2O3-deposited V2O5 xerogel film could be attributed to the improved surface chemistry and enhanced mechanical strength. During repeated lithium-ion intercalation/de-intercalation, atomic layers of Al2O3 which were coated onto V2O5 surface could prevent V2O5 electrode dissolution into electrolyte by reducing direct contact between active electrode and electrolyte while at the same time acting as binder to maintain good mechanical contact between nanoparticles inside the film. VC 2012 American Vacuum Society.« less

Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

2018-01-01

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10-5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

PubMed

Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

2017-06-27

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

NASA Technical Reports Server (NTRS)

Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

1986-01-01

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Philip M., E-mail: philip.campbell@gatech.edu; Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332; Tarasov, Alexey

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs),more » separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.« less

Genome Sequence of the Soil Bacterium Janthinobacterium sp. KBS0711

PubMed Central

Shoemaker, William R.; Muscarella, Mario E.

2015-01-01

We present a draft genome of Janthinobacterium sp. KBS0711 that was isolated from agricultural soil. The genome provides insight into the ecological strategies of this bacterium in free-living and host-associated environments. PMID:26089434

Boeing CST-100 Starliner/ULA Atlas V Wind Tunnel Demonstration

NASA Image and Video Library

2016-10-13

An engineer works with a model of a United Launch Alliance Atlas V rocket with a Boeing CST-100 Starliner capsule inside a wind tunnel at NASA's Ames Research Center in California. The Starliner/Atlas V system is under development by Boeing and ULA in partnership with NASA's Commercial Crew Program to launch astronauts to the International Space Station.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Wind tunnel experiments: influence of erosion and deposition on wind-packing of new snow

NASA Astrophysics Data System (ADS)

Sommer, Christian G.; Lehning, Michael; Fierz, Charles

2018-01-01

Wind sometimes creates a hard, wind-packed layer at the surface of a snowpack. The formation of such wind crusts was observed during wind tunnel experiments with combined SnowMicroPen and Microsoft Kinect sensors. The former provides the hardness of new and wind-packed snow and the latter spatial snow depth data in the test section. Previous experiments showed that saltation is necessary but not sufficient for wind-packing. The combination of hardness and snow depth data now allows to study the case with saltation in more detail. The Kinect data requires complex processing but with the appropriate corrections, snow depth changes can be measured with an accuracy of about 1 mm. The Kinect is therefore well suited to quantify erosion and deposition. We found that no hardening occurred during erosion and that a wind crust may or may not form when snow is deposited. Deposition is more efficient at hardening snow in wind-exposed than in wind-sheltered areas. The snow hardness increased more on the windward side of artificial obstacles placed in the wind tunnel. Similarly, the snow was harder in positions with a low Sx parameter. Sx describes how wind-sheltered (high Sx) or wind-exposed (low Sx) a position is and was calculated based on the Kinect data. The correlation between Sx and snow hardness was -0.63. We also found a negative correlation of -0.4 between the snow hardness and the deposition rate. Slowly deposited snow is harder than a rapidly growing accumulation. Sx and the deposition rate together explain about half of the observed variability of snow hardness.

Piezo-tunnel effect in Al/Al2O3/Al junctions elaborated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Rafael, R.; Puyoo, E.; Malhaire, C.

2017-11-01

In this work, the electrical transport in Al/Al2O3/Al junctions under mechanical stress is investigated in the perspective to use them as strain sensors. The metal/insulator/metal junctions are elaborated with a low temperature process (≤200 °C) fully compatible with CMOS back-end-of-line. The conduction mechanism in the structure is found to be Fowler-Nordheim tunneling, and efforts are made to extract the relevant physical parameters. Gauge factors up to -32.5 were found in the fabricated devices under tensile stress. Finally, theoretical mechanical considerations give strong evidence that strain sensitivity in Al/Al2O3/Al structures originates not only from geometrical deformations but also from the variation of interface barrier height and/or effective electronic mass in the tunneling oxide layer.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

PubMed Central

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-01-01

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

PubMed

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-09-10

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

NASA Astrophysics Data System (ADS)

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-04-01

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10-9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions

NASA Astrophysics Data System (ADS)

Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang

2018-06-01

Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.

Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

NASA Astrophysics Data System (ADS)

Karbasian, Golnaz

The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

Scanning tunneling microscopy studies of pulse deposition of dinuclear organometallic molecules on Au(111)

NASA Astrophysics Data System (ADS)

Guo, Song; Alex Kandel, S.

2008-01-01

Ultrahigh-vacuum scanning tunneling microscopy (STM) was used to study trans-[Cl(dppe)2Ru(CC)6Ru(dppe)2Cl] [abbreviated as Ru2, diphenylphosphinoethane (dppe)] on Au(111). This large organometallic molecule was pulse deposited onto the Au(111) surface under ultrahigh-vacuum (UHV) conditions. UHV STM studies on the prepared sample were carried out at room temperature and 77K in order to probe molecular adsorption and to characterize the surface produced by the pulse deposition process. Isolated Ru2 molecules were successfully imaged by STM at room temperature; however, STM images were degraded by mobile toluene solvent molecules that remain on the surface after the deposition. Cooling the sample to 77K allows the solvent molecules to be observed directly using STM, and under these conditions, toluene forms organized striped domains with regular domain boundaries and a lattice characterized by 5.3 and 2.7Å intermolecular distances. When methylene chloride is used as the solvent, it forms analogous domains on the surface at 77K. Mild annealing under vacuum causes most toluene molecules to desorb from the surface; however, this annealing process may lead to thermal degradation of Ru2 molecules. Although pulse deposition is an effective way to deposit molecules on surfaces, the presence of solvent on the surface after pulse deposition is unavoidable without thermal annealing, and this annealing may cause undesired chemical changes in the adsorbates under study. Preparation of samples using pulse deposition must take into account the characteristics of sample molecules, solvent, and surfaces.

Low operation voltage and high thermal stability of a WSi2 nanocrystal memory device using an Al2O3/HfO2/Al2O3 tunnel layer

NASA Astrophysics Data System (ADS)

Uk Lee, Dong; Jun Lee, Hyo; Kyu Kim, Eun; You, Hee-Wook; Cho, Won-Ju

2012-02-01

A WSi2 nanocrystal nonvolatile memory device was fabricated with an Al2O3/HfO2/Al2O3 (AHA) tunnel layer and its electrical characteristics were evaluated at 25, 50, 70, 100, and 125 °C. The program/erase (P/E) speed at 125 °C was approximately 500 μs under threshold voltage shifts of 1 V during voltage sweeping of 8 V/-8 V. When the applied pulse voltage was ±9 V for 1 s for the P/E conditions, the memory window at 125 °C was approximately 1.25 V after 105 s. The activation energies for the charge losses of 5%, 10%, 15%, 20%, 25%, 30%, and 35% were approximately 0.05, 0.11, 0.17, 0.21, 0.23, 0.23, and 0.23 eV, respectively. The charge loss mechanisms were direct tunneling and Pool-Frenkel emission between the WSi2 nanocrystals and the AHA barrier engineered tunneling layer. The WSi2 nanocrystal memory device with multi-stacked high-K tunnel layers showed strong potential for applications in nonvolatile memory devices.

Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun

Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gatemore » bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.« less

Characterization of pulsed laser deposition grown V2O3 converted VO2

NASA Astrophysics Data System (ADS)

Majid, Suhail; Shukla, D. K.; Rahman, F.; Gautam, Kamini; Sathe, V. G.; Choudhary, R. J.; Phase, D. M.

2016-10-01

Controllable tuning of Metal-insulator transition in VxOy thin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2 phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3 thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2 phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Wind Tunnel Experiments: Influence of Erosion and Deposition on Wind-Packing of New Snow

NASA Astrophysics Data System (ADS)

Sommer, C.; Fierz, C. G.; Lehning, M.

2017-12-01

We observed the formation of wind crusts in wind tunnel experiments. A SnowMicroPen was used to measure the hardness profile of the snow and a Microsoft Kinect provided distributed snow depth data. Earlier experiments showed that no crust forms without saltation and that the dynamics of erosion and deposition may be a key factor to explain wind-packing. The Kinect data could be used to quantify spatial erosion and deposition patterns and the combination with the SnowMicroPen data allowed to study the effect of erosion and deposition on wind-hardening. We found that erosion had no hardening effect on fresh snow and that deposition is a necessary but not sufficient condition for wind crust formation. Deposited snow was only hardened in wind-exposed areas. The Kinect data was used to calculate the wind-exposure parameter Sx. We observed no significant hardening for Sx>0.25. The variability of resulting wind crust hardnesses at Sx<0.25 was still large, however.

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers.

PubMed

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-12-01

GaN-based metal-oxide-semiconductor capacitors with ZrO 2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10 -9  A/cm 2 at 1 V was obtained when O 3 was used for the growth of ZrO 2 . Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

Tunneling transport of mono- and few-layers magnetic van der Waals MnPS3

NASA Astrophysics Data System (ADS)

Lee, Sungmin; Choi, Ki-Young; Lee, Sangik; Park, Bae Ho; Park, Je-Geun; Emergent Phenomena Group Team; Department of Physics, Konkuk University Collaboration

We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm. The work at the IBS CCES was supported by the research program of Institute for Basic Science. S.L. and B.H.P were supported by the National Research Foundation of Korea (NRF) Grants funded by the Korea government (MSIP).

Silicon, germanium, and III-V-based tunneling devices for low-power applications

NASA Astrophysics Data System (ADS)

Smith, Joshua T.

While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

Feasibility of making sound power measurements in the NASA Langley V/STOL tunnel test section

NASA Technical Reports Server (NTRS)

Brooks, T. F.; Scheiman, J.; Silcox, R. J.

1976-01-01

Based on exploratory acoustic measurements in Langley's V/STOL wind tunnel, recommendations are made on the methodology for making sound power measurements of aircraft components in the closed tunnel test section. During airflow, tunnel self-noise and microphone flow-induced noise place restrictions on the amplitude and spectrum of the sound source to be measured. Models of aircraft components with high sound level sources, such as thrust engines and powered lift systems, seem likely candidates for acoustic testing.

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers

NASA Astrophysics Data System (ADS)

Lee, Hyo Jun; Lee, Dong Uk; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju

2011-06-01

Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When ΔVFB is about 1 V after applying voltage at ±8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 µs, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 104 cycles.

BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.

Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface ofmore » the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.« less

Whole-Genome Sequence of the Soil Bacterium Micrococcus sp. KBS0714.

PubMed

Kuo, V; Shoemaker, W R; Muscarella, M E; Lennon, J T

2017-08-10

We present here a draft genome assembly of Micrococcus sp. KBS0714, which was isolated from agricultural soil. The genome provides insight into the strategies that Micrococcus spp. use to contend with environmental stressors such as desiccation and starvation in environmental and host-associated ecosystems. Copyright © 2017 Kuo et al.

Molecular series-tunneling junctions.

PubMed

Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

2015-05-13

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

Tunneling studies of compositionally modulated PB/Fe films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wawro, A.; Witek, A.; Majewski, J.

1988-01-01

Preliminary results of preparation and investigation of compositionally modulated Pb/Fe films are reported. These films have been used as electrodes in Al/Al/sub 2/O/sub 3//{kappa}(Pb/Fe) tunnel junctions and the tunnelling characteristics I-V, dV/dI and d/sup 2/V/d/I/sup 2/ vs V have been studied in dependence on the modulation period.

Magnetic tunnel junctions utilizing diamond-like carbon tunnel barriers

NASA Astrophysics Data System (ADS)

Cadieu, F. J.; Chen, Li; Li, Biao

2002-05-01

We have devised a method whereby thin particulate-free diamond-like carbon films can be made with good adhesion onto even room-temperature substrates. The method employs a filtered ionized carbon beam created by the vacuum impact of a high-energy, approximately 1 J per pulse, 248 nm excimer laser onto a carbon target. The resultant deposition beam can be steered and deflected by magnetic and electric fields to paint a specific substrate area. An important aspect of this deposition method is that the resultant films are particulate free and formed only as the result of atomic species impact. The vast majority of magnetic tunnel junctions utilizing thin metallic magnetic films have employed a thin oxidized layer of aluminum to form the tunnel barrier. This has presented reproducibility problems because the indicated optimal barrier thickness is only approximately 13 Å thick. Magnetic tunnel junctions utilizing Co and permalloy films made by evaporation and sputtering have been fabricated with an intervening diamond-like carbon tunnel barrier. The diamond-like carbon thickness profile has been tapered so that seven junctions with different barrier thickness can be formed at once. Magnetoresistive (MR) measurements made between successive permalloy strip ends include contributions from two junctions and from the permalloy and Co strips that act as current leads to the junctions. Magnetic tunnel junctions with thicker carbon barriers exhibit MR effects that are dominated by that of the permalloy strips. Since these tunnel barriers are formed without the need for oxygen, complete tunnel junctions can be formed with all high-vacuum processing.

View of Flume Tunnel #3 through Purple Mountain, showing flume ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of Flume Tunnel #3 through Purple Mountain, showing flume entering into the tunnel. Looking south - Childs-Irving Hydroelectric Project, Childs System, Flume Tunnel No. 3, Forest Service Road 708/502, Camp Verde, Yavapai County, AZ

Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices

NASA Astrophysics Data System (ADS)

Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

2018-02-01

In the current work, a tunneling barrier device made of 20 nm thick Sb2Te3 layer deposited onto 500 nm thick CdS is designed and characterized. The design included a Yb metallic substrate and Ag point contact of area of 10-3 cm2. The heterojunction properties are investigated by means of x-ray diffraction and impedance spectroscopy techniques. It is observed that the coating of the Sb2Te3 onto the surface of CdS causes a further deformation to the already strained structure of hexagonal CdS. The designed energy band diagram for the CdS/Sb2Te3 suggests a straddling type of heterojunction with an estimated conduction and valence band offsets of 0.35 and 1.74 eV, respectively. In addition, the analysis of the capacitance-voltage characteristic curve revealed a depletion region width of 14 nm. On the other hand, the capacitance and conductivity spectra which are analyzed in the frequency domain of 0.001-1.80 GHz indicated that the conduction in the device is dominated by the quantum mechanical tunneling in the region below 0.26 GHz and by the correlated barrier hopping in the remaining region. While the modeling of the conductivity spectra allowed investigation of the density of states near Fermi levels and an average scattering time of 1.0 ns, the capacitance spectra exhibited resonance at 0.26 GHz followed by negative differential capacitance effect in the frequency domain of 0.26-1.8 GHz. Furthermore, the evaluation of the impedance and reflection coefficient spectra indicated the usability of these devices as wide range low pass filters with ideal values of voltage standing wave ratios.

Use of 3D Printing for Custom Wind Tunnel Fabrication

NASA Astrophysics Data System (ADS)

Gagorik, Paul; Bates, Zachary; Issakhanian, Emin

2016-11-01

Small-scale wind tunnels for the most part are fairly simple to produce with standard building equipment. However, the intricate bell housing and inlet shape of an Eiffel type wind tunnel, as well as the transition from diffuser to fan in a rectangular tunnel can present design and construction obstacles. With the help of 3D printing, these shapes can be custom designed in CAD models and printed in the lab at very low cost. The undergraduate team at Loyola Marymount University has built a custom benchtop tunnel for gas turbine film cooling experiments. 3D printing is combined with conventional construction methods to build the tunnel. 3D printing is also used to build the custom tunnel floor and interchangeable experimental pieces for various experimental shapes. This simple and low-cost tunnel is a custom solution for specific engineering experiments for gas turbine technology research.

Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes.

PubMed

Darbandi, A; Kavanagh, K L; Watkins, S P

2015-08-12

GaAs core-shell p-n junction tunnel diodes were demonstrated by combining vapor-liquid-solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core-shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm(2) point the way to applications in core-shell photovoltaics and tunnel field effect transistors.

Correlation of low speed wind tunnel and flight test data for V/STOL aircraft

NASA Technical Reports Server (NTRS)

Cook, W. L.; Hickey, D. H.

1975-01-01

The XV-5B fan-in-wing aircraft and the Y0V-10 RCF rotating cylinder flap aircraft were subjected to wind tunnel tests. These tests were conducted specifically to provide for correlation between wind tunnel and inflight aerodynamics and noise test data. Correlation between aerodynamic and noise data are presented and testing techniques that are related to the accuracy of the data, or that might affect the correlations, are discussed.

Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

NASA Astrophysics Data System (ADS)

Narimani, K.; Glass, S.; Bernardy, P.; von den Driesch, N.; Zhao, Q. T.; Mantl, S.

2018-05-01

In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10-7 A/μm at Vds = Von = Vgs - Voff = -0.5 V for an Ioff = 1 nA/μm and an average SS of 55 mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency gm/Id beats the MOSFET performance at low currents.

1. East portal of Tunnel 3, view to west, 135mm ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

1. East portal of Tunnel 3, view to west, 135mm lens. This tunnel was photographed to provide context, because even though somewhat enlarged, it illustrates the nature of the unlined hard rock tunnels typical of the original Central Pacific construction in 1868. - Central Pacific Transcontinental Railroad, Tunnel No. 3, Milepost 180.65, Cisco, Placer County, CA

Phase 2 and 3 wind tunnel tests of the J-97 powered, external augmentor V/STOL model. [at Ames 40 by 80 wind tunnel

NASA Technical Reports Server (NTRS)

Garland, D. B.; Harris, J. L.

1980-01-01

Static and forward speed tests were made in a 40 multiplied by 80 foot wind tunnel of a large-scale, ejector-powered V/STOL aircraft model. Modifications were made to the model following earlier tests primarily to improve longitudinal acceleration capability during transition from hovering to wingborne flight. A rearward deflection of the fuselage augmentor thrust vector was shown to be beneficial in this regard. Other augmentor modifications were tested, notably the removal of both endplates, which improved acceleration performance at the higher transition speeds. The model tests again demonstrated minimal interference of the fuselage augmentor on aerodynamic lift. A flapped canard surface also showed negligible influence on the performance of the wing and of the fuselage augmentor.

Titanium deposition from ionic liquids - appropriate choice of electrolyte and precursor.

PubMed

Berger, Claudia A; Arkhipova, Maria; Farkas, Attila; Maas, Gerhard; Jacob, Timo

2016-02-14

In this study titanium isopropoxide was dissolved in 1-butyl-3-methyl-imidazolium bis(trifluoromethylsulfonyl)imide (BMITFSI) and further in a custom-made guanidinium-based ionic liquid (N11N11NpipGuaTFSI). Electrochemical investigations were carried out by means of cyclic voltammetry (CV) and the initial stages of metal deposition were followed by in situ scanning tunneling microscopy (STM). For BMITFSI we found one large cathodic reduction peak at a potential of -1.2 V vs. Pt, corresponding to the growth of monoatomic high islands. The obtained deposit was identified as elemental titanium by Auger Electron Spectroscopy (AES). Furthermore, we found a corresponding anodic peak at -0.3 V vs. Pt, which is associated with the dissolution of the islands. This observation leads to the assumption that titanium deposition from the imidazolium-based room-temperature ionic liquid (RTIL) proceeds in a one-step electron transfer. In contrast, for the guanidinium-based RTIL we found several peaks during titanium reduction and oxidation, which indicates a multi-step electron transfer in this alternative electrolyte.

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Navarro, H., E-mail: henrynavarro@cab.cnea.gov.ar; Sirena, M.; Haberkorn, N.

2015-07-28

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the appliedmore » voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)« less

Development of a good-quality speech coder for transmission over noisy channels at 2.4 kb/s

NASA Astrophysics Data System (ADS)

Viswanathan, V. R.; Berouti, M.; Higgins, A.; Russell, W.

1982-03-01

This report describes the development, study, and experimental results of a 2.4 kb/s speech coder called harmonic deviations (HDV) vocoder, which transmits good-quality speech over noisy channels with bit-error rates of up to 1%. The HDV coder is based on the linear predictive coding (LPC) vocoder, and it transmits additional information over and above the data transmitted by the LPC vocoder, in the form of deviations between the speech spectrum and the LPC all-pole model spectrum at a selected set of frequencies. At the receiver, the spectral deviations are used to generate the excitation signal for the all-pole synthesis filter. The report describes and compares several methods for extracting the spectral deviations from the speech signal and for encoding them. To limit the bit-rate of the HDV coder to 2.4 kb/s the report discusses several methods including orthogonal transformation and minimum-mean-square-error scalar quantization of log area ratios, two-stage vector-scalar quantization, and variable frame rate transmission. The report also presents the results of speech-quality optimization of the HDV coder at 2.4 kb/s.

Tunneling barrier in nanoparticle junctions of La2/3(Ca,Sr)1/3MnO3: Nonlinear current-voltage characteristics

NASA Astrophysics Data System (ADS)

Niebieskikwiat, D.; Sánchez, R. D.; Lamas, D. G.; Caneiro, A.; Hueso, L. E.; Rivas, J.

2003-05-01

We study the nonlinear current-voltage (I-V) characteristics and analyze the voltage-dependent tunneling conductance in nanoparticles of La2/3A1/3MnO3 (A=Ca, Sr). The powders were prepared by different wet-chemical routes and low calcination temperatures were used to obtain an average particle size D≈30 nm. The data are comprehensively explained in terms of the tunneling picture, which allows one to estimate the height of the grain boundary insulating barrier (φ) for each sample. For constant D, our results show that the sample preparation route is mainly responsible for the value of φ in nanoparticles, while the Coulomb gap in the Coulomb blockade regime is ˜3 times higher for Sr- than for Ca-doping. We also show that a small fraction of the barriers contribute to the nonlinear transport, and the current is mainly carried through low-resistive percolated paths. In addition, despite the different barrier strengths, the low-field magnetoresistance (LFMR) is similar for all samples, implying that φ is not the fundamental parameter determining the LFMR.

105. VIEW NORTH FROM SLC3W CABLE TUNNEL INTO CABLE VAULT ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

105. VIEW NORTH FROM SLC-3W CABLE TUNNEL INTO CABLE VAULT AND SLC-3E CABLE TUNNEL. NOTE WOODEN PLANKING ON FLOOR OF TUNNEL AND CABLE TRAYS LINING TUNNEL WALLS. STAIRS ON EAST WALL OF CABLE VAULT LEAD INTO LANDLINE INSTRUMENTATION ROOM. - Vandenberg Air Force Base, Space Launch Complex 3, Launch Operations Building, Napa & Alden Roads, Lompoc, Santa Barbara County, CA

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

NASA Astrophysics Data System (ADS)

Thomas, Paul M.

Understanding of quantum tunneling phenomenon in semiconductor systems is increasingly important as CMOS replacement technologies are investigated. This work studies a variety of heterojunction materials and types to increase tunnel currents to CMOS competitive levels and to understand how integration onto Si substrates affects performance. Esaki tunnel diodes were grown by Molecular Beam Epitaxy (MBE) on Si substrates via a graded buffer and control Esaki tunnel diodes grown on lattice matched substrates for this work. Peak current density for each diode is extracted and benchmarked to build an empirical data set for predicting diode performance. Additionally, statistics are used as tool to show peak to valley ratio for the III-V on Si sample and the control perform similarly below a threshold area. This work has applications beyond logic, as multijunction solar cell, heterojunction bipolar transistor, and light emitting diode designs all benefit from better tunnel contact design.

3. East portal of Tunnel 39, view to west with ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. East portal of Tunnel 39, view to west with east portal of Tunnel 38 (HAER CA-211) visible in distance, 135mm lens with electronic flash fill. - Central Pacific Transcontinental Railroad, Tunnel No. 39, Milepost 180.95, Cisco, Placer County, CA

Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode

NASA Astrophysics Data System (ADS)

Sattari-Esfahlan, S. M.; Fouladi-Oskuei, J.; Shojaei, S.

2017-04-01

Here, we study the negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice (PGSL) and investigate the transport characteristics by adopted transfer matrix method within Landauer-Buttiker formalism. Our model device is based on one-dimensional Kronig-Penney type electrostatic potential in monolayer graphene deposited on a substrate, where the bias voltage is applied by two electrodes in the left and right. At Low bias voltages, we found that NDR appears due to breaking of minibands to Wannier-Stark ladders (WSLs). At the critical bias voltage, delocalization appeared by WS states leads to tunneling peak current in current-voltage (I-V) characteristics. With increasing bias voltage, crossing of rungs from various WSL results in multi-peak NDR. The results demonstrate that the structure parameters like barrier/well thickness and barrier height have remarkable effect on I-V characteristics of PGSL. In addition, Dirac gap enhances peak to valley (PVR) value due to suppressing Klein tunneling. Our results show that the tunable PVR in PGSL resonant tunneling diode can be achievable by structure parameters engineering. NDR at ultra-low bias voltages, such as 100 mV, with giant PVR of 20 is obtained. In our device, the multiple same NDR peaks with ultra-low bias voltage provide promising prospect for multi-valued memories and the low power nanoelectronic tunneling devices.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

All NbN tunnel junction fabrication

NASA Technical Reports Server (NTRS)

Leduc, H. G.; Khanna, S. K.; Stern, J. A.

1987-01-01

The development of SIS tunnel junctions based on NbN for mixer applications in the submillimeter range is reported. The unique technological challenges inherent in the development of all refractory-compound superconductor-based tunnel junctions are highlighted. Current deposition and fabrication techniques are discussed, and the current status of all-NbN tunnel junctions is reported.

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Jin, Qiao; Zheng, Chunyan; Zhang, Yongcheng; Lu, Chaojing; Li, Qiang; Li, Shandong; Dai, Jiyan; Wen, Zheng

2017-09-01

Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3 barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3 device exhibits a giant ROFF/RON resistance ratio of ˜3 × 105 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ˜0.93 eV and room-temperature retention time of ˜70 years can be extracted.

Fixed-Gap Tunnel Junction for Reading DNA Nucleotides

PubMed Central

2015-01-01

Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events. PMID:25380505

3. East portal of Tunnel 25, contextual view to southwest ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. East portal of Tunnel 25, contextual view to southwest from atop Tunnel 26 (HAER CA-202), with the original Central Pacific Transcontinental line passing above the new line, 135mm lens. - Central Pacific Transcontinental Railroad, Tunnel No. 25, Milepost 133.09, Applegate, Placer County, CA

Measurement of emission and deposition patterns of ammonia from urine in grass swards

NASA Astrophysics Data System (ADS)

Ross, C. A.; Jarvis, S. C.

Currently, legislation is being considered to reduce NH3 emissions in the UK. The major sources of NH3 and their relative contributions are well known, however, the processes that control the rates of emission are still poorly defined. A series of wind-tunnel experiments has been carried out to determine the effects of various management practices on NH3 losses. The tunnels were modified to enable NH3 emission and subsequent deposition to the adjacent swards in the field to be measured. The wind-tunnels were used to examine the effects of herbage length, cutting and N status on rates of NH3 fluxes, which together with the prevailing environmental conditions affected the rates of NH3 emission and deposition. Results showed that between 20 and 60% of the NH3 emitted was deposited within 2 m. Compensation points of between 1.0 and 2.3 μg m-3 were calculated for the grass sward.

1. West portal of Tunnel 3, contextual view to north ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

1. West portal of Tunnel 3, contextual view to north from milepost 537.6, 210mm lens. The single-lens searchlight-type block signals are Southern Pacific Common Standard signals, a type in use since the 1920s. Many of these have been replaced system-wide as a result of various mergers since the 1980s. Located in the Diamond Peak Wilderness of Willamette National Forest, Tunnel 3 passes beneath Pengra Pass. - Southern Pacific Railroad Natron Cutoff, Tunnel 3, Milepost 537.77, Odell Lake, Klamath County, OR

Influence of solution deposition rate on properties of V2O5 thin films deposited by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M.

2016-07-01

Vanadium oxide (V2O5) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl3 in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films' crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V2O5 film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Jian-Qing, E-mail: djqkust@sina.com

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing tomore » the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.« less

Design of 3 GeV booster ring lattice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Etisken, O., E-mail: ozgur.etisken@cern.ch; Ciftci, A. K., E-mail: abbas.kenan.ciftci@cern.ch

2016-03-25

The aim of this study is to design of a 3 GeV booster ring for the 3 GeV storage ring. Electrons are needed to be accelerated to 3.0 GeV from 0.15 GeV energy. In this frame, we studied on two options for booster ring; a compact booster and the booster that shares the same tunnel with the storage ring. The lattice type has been chosen FODO for both options, lattice parameters are calculated, sextupole magnets are used to decrease dynamic aperture problem and dynamic aperture calculations are also made with considering of the necessary conditions. After designing and calculating ofmore » the parameters, these designs have been compared with each other. In addition to this comparison, these booster design parameters have been compared with some world centers design parameters and the reliability of the booster design is seen. Beam optics, OPA and Elegant simulation programs have been used in the study calculations.« less

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

PubMed Central

Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

2016-01-01

The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

3. VIEW OF ESCAPE TUNNEL IN NORTH FACE OF LAUNCH ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. VIEW OF ESCAPE TUNNEL IN NORTH FACE OF LAUNCH OPERATIONS BUILDING. BUNKER PERISCOPE VISIBLE ABOVE RIGHT CORNER OF TUNNEL. - Vandenberg Air Force Base, Space Launch Complex 3, Launch Operations Building, Napa & Alden Roads, Lompoc, Santa Barbara County, CA

Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

PubMed

Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2016-08-23

Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

High P/V ratio of GaInAs/InP resonant tunneling diode grown by OMVPE

NASA Astrophysics Data System (ADS)

Sekiguchi, Tomonori; Miyamoto, Yasuyuki; Furuya, Kazuhito

1992-11-01

This paper reports higher peak-to-valley current (P/V) ratio in GaInAs/InP resonant tunneling diode (RTD) than ever. In organomettalic vapor phase epitaxy, the P/V ratio depends strongly on the partial pressure of the group V gas. The obtained P/V ratios are 9.7 and 7.4 at 4 and 77 K, respectively. The width of the resonance level is 11 meV at 4 K.

Polarization and Fowler-Nordheim tunneling in anodized Al-Al2O3-Au diodes

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2000-06-01

Polarization in anodic Al2O3 films is measured by using quasi-dc current-voltage (I-V) curves of Al-Al2O3-Au diodes. A reproducible polarization state is established by applying a negative voltage to the Au electrode of a rectifying Al-Al2O3-Au diode. The difference between subsequent I-V curves with Au positive is a measure of polarization in the sample. The magnitude of polarization charge in Al2O3 depends on the anodizing electrolyte. Al2O3 films formed in H2O-based electrolytes have approximately ten times the polarization charge of Al2O3 films formed in ethylene glycol-based electrolyte. Anodizing conditions that produce greater polarizing charge in anodic Al2O3 result in voltage-time curves during anodization under galvanostatic conditions that are nonlinear. Anodic films with greater polarizing charge also have a greater apparent interface capacitance which is independent of Al2O3 thickness. I-V curves of Al-Al2O3-Au diodes for increasing voltage are dominated by polarization. I-V curves for decreasing voltage are reproducible and parallel but depend on the maximum current and voltage reached during the measurement. There is no single current corresponding to a given voltage. I-V curves for decreasing voltage are analyzed assuming that the conduction mechanism is Fowler-Nordheim (FN) tunneling. There is a qualitative difference between the FN tunneling parameters for Al2O3 films formed in H2O-based electrolytes and those formed in ethylene glycol-based electrolyte. For the former the value of the exponential term in the FN analysis increases as the value of maximum voltage and current in an I-V characteristic increases, while the value of the pre-exponential term is nearly constant. For the latter, the exponential term is nearly constant as maximum voltage and current increase, but the pre-exponential term decreases by about 5 decades. Thus polarization charge incorporated during formation of anodized Al2O3 strongly affects the formation of the insulating

Technology and application of 3D tunnel information monitoring

NASA Astrophysics Data System (ADS)

Li, Changqing; Deng, Hongliang; Chen, Ge; Wang, Simiao; Guo, Yang; Wu, Shenglin

2015-12-01

It is very necessary that Implement information monitoring and dynamic construction because of Complex geological environment and lack of basic information in the process of tunnel construction. The monitoring results show that 3 d laser scanning technology and information management system has important theoretical significance and application value to ensure the safety of tunnel construction, rich construction theory and technology. It can be known in real time the deformation information and the construction information in near tunnel workplace and the whole tunnel section in real time. In the meantime, it can be known the deformation regularity in the tunnel excavation process and the early warning and forecasting in the form of graphic and data. In order to determine the reasonable time and provide basis for supporting parameters and lining.

Problems of interaction longitudinal shear waves with V-shape tunnels defect

NASA Astrophysics Data System (ADS)

Popov, V. G.

2018-04-01

The problem of determining the two-dimensional dynamic stress state near a tunnel defect of V-shaped cross-section is solved. The defect is located in an infinite elastic medium, where harmonic longitudinal shear waves are propagating. The initial problem is reduced to a system of two singular integral or integro-differential equations with fixed singularities. A numerical method for solving these systems with regard to the true asymptotics of the unknown functions is developed.

Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

NASA Astrophysics Data System (ADS)

Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Kevin J.

2017-12-01

Remote N2 plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS2. The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm2·V-1·s-1. The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 µA/µm. The contact resistance reduction can be attributed to the alleviated metal-MoS2 interface reaction and the preserved conductivity of MoS2 below the source/drain metal contact.

Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karbasian, Golnaz, E-mail: Golnaz.Karbasian.1@nd.edu; McConnell, Michael S.; Orlov, Alexei O.

The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layersmore » of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.« less

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Lee, Edwin W.; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D.; Johnson, Jared M.; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

2016-10-01

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

The 16 August 1997 Novaya Zemlya seismic event as viewed from GSN stations KEV and KBS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartse, H.E.

1997-11-01

Using current and historic seismic records from Global Seismic Network stations KEV and KBS, the authors find that S minus P arrival time comparisons between nuclear explosions and the 16 August 1997 seismic event (m{sub b} {approx} 3.6) from near Novaya Zemlya clearly indicate that (relative to KEV) the 16 August event occurred at least 80 km east of the Russian test site. Including S minus P arrival times from KBS constrains the location to beneath the Kara Sea and in good agreement with previously reported locations, over 100 km southeast of the test site. From an analysis of P{submore » n}/S{sub n} waveform ratios at frequencies above 4 Hz, they find that the 16 August event falls within the population of regional earthquakes and is distinctly separated from Novaya Zemlya and other northern Eurasian nuclear explosion populations. Thus, given its location and waveform characteristics, they conclude the 16 August event was an earthquake. The 16 August event was not detected at teleseismic distances, and thus, this event provides a good example of the regional detection, location, and identification efforts that will be required to monitor the Comprehensive Test Ban Treaty below m{sub b} {approx} 4.« less

Well-Ordered In Adatoms at the In 2 O 3 ( 111 ) Surface Created by Fe Deposition

DOE PAGES

Wagner, Margareta; Lackner, Peter; Seiler, Steffen; ...

2016-11-11

Metal deposition on oxide surfaces usually results in adatoms, clusters, or islands of the deposited material, where defects in the surface often act as nucleation centers. An alternate configuration is reported. Afterwards the vapor deposition of Fe on the In 2O 3(111) surface at room temperature, ordered adatoms are observed with scanning tunneling microscopy (STM). These are identical to the In adatoms that form when the sample is reduced by heating in ultrahigh vacuum. Our density functional theory (DFT) calculations confirm that Fe interchanges with In in the topmost layer, pushing the excess In atoms to the surface where theymore » arrange as a well-ordered adatom array.« less

Counting statistics of tunneling current

NASA Astrophysics Data System (ADS)

Levitov, L. S.; Reznikov, M.

2004-09-01

The form of electron counting statistics of the tunneling current noise in a generic many-body interacting electron system is obtained and universal relations between its different moments are derived. A generalized fluctuation-dissipation theorem providing a relation between current and noise at arbitrary bias-to-temperature ratio eV/kBT is established in the tunneling Hamiltonian approximation. The third correlator of current fluctuations S3 (the skewness of the charge counting distribution) has a universal Schottky-type relation with the current and quasiparticle charge that holds in a wide bias voltage range, both at large and small eV/kBT . The insensitivity of S3 to the Nyquist-Schottky crossover represents an advantage compared to the Schottky formula for the noise power. We discuss the possibility of using the correlator S3 for detecting quasiparticle charge at high temperatures.

3. VIEW SOUTHEAST OF TRANSONIC WIND TUNNEL BUILDING TO SUBSONIC ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. VIEW SOUTHEAST OF TRANSONIC WIND TUNNEL BUILDING TO SUBSONIC WIND TUNNEL BUILDING - Naval Surface Warfare Center, Bounded by Clara Barton Parkway & McArthur Boulevard, Silver Spring, Montgomery County, MD

Wind tunnel studies on spray deposition on leaves of tree species used for windbreaks and exposure of honey bees.

PubMed

Ucar, Tamer; Hall, Franklin R; Tew, James E; Hacker, James K

2003-03-01

A wind tunnel study was conducted to determine pesticide deposition on commonly used windbreak tree species used as spray drift barriers and associated exposure of honey bees. Although it has been known that windbreaks are effective in reducing chemical drift from agricultural applications, there is still an enormous information and data gap on details of the dependence of the mechanism on the biological materials of the barriers and on standardization of relevant assessment methods. Beneficial arthropods like honey bees are adversely affected by airborne drift of pesticides. A study was initiated by first establishing a wind tunnel to create a controlled environment for capture efficiency work. Suitable spray parameters were determined after a preliminary study to construct and develop a wind tunnel protocol. A tracer dye solution was sprayed onto the windbreak samples and honey bees located in the wind tunnel at various simulated wind speeds. Analysis of data from this work has shown that needle-like foliage of windbreak trees captures two to four times more spray than broad-leaves. In addition, it was determined that, at lower wind speeds, flying bees tend to capture slightly more spray than bees at rest.

Assessing 3D tunnel position in ACL reconstruction using a novel single image 3D-2D registration

NASA Astrophysics Data System (ADS)

Kang, X.; Yau, W. P.; Otake, Y.; Cheung, P. Y. S.; Hu, Y.; Taylor, R. H.

2012-02-01

The routinely used procedure for evaluating tunnel positions following anterior cruciate ligament (ACL) reconstructions based on standard X-ray images is known to pose difficulties in terms of obtaining accurate measures, especially in providing three-dimensional tunnel positions. This is largely due to the variability in individual knee joint pose relative to X-ray plates. Accurate results were reported using postoperative CT. However, its extensive usage in clinical routine is hampered by its major requirement of having CT scans of individual patients, which is not available for most ACL reconstructions. These difficulties are addressed through the proposed method, which aligns a knee model to X-ray images using our novel single-image 3D-2D registration method and then estimates the 3D tunnel position. In the proposed method, the alignment is achieved by using a novel contour-based 3D-2D registration method wherein image contours are treated as a set of oriented points. However, instead of using some form of orientation weighting function and multiplying it with a distance function, we formulate the 3D-2D registration as a probability density estimation using a mixture of von Mises-Fisher-Gaussian (vMFG) distributions and solve it through an expectation maximization (EM) algorithm. Compared with the ground-truth established from postoperative CT, our registration method in an experiment using a plastic phantom showed accurate results with errors of (-0.43°+/-1.19°, 0.45°+/-2.17°, 0.23°+/-1.05°) and (0.03+/-0.55, -0.03+/-0.54, -2.73+/-1.64) mm. As for the entry point of the ACL tunnel, one of the key measurements, it was obtained with high accuracy of 0.53+/-0.30 mm distance errors.

Wind-tunnel results of the aerodynamic characteristics of a 1/8-scale model of a twin engine short-haul transport. [in Langley V/STOL tunnel

NASA Technical Reports Server (NTRS)

Paulson, J. W., Jr.

1977-01-01

A wind tunnel test was conducted in the Langley V/STOL tunnel to define the aerodynamic characteristics of a 1/8-scale twin-engine short haul transport. The model was tested in both the cruise and approach configurations with various control surfaces deflected. Data were obtained out of ground effect for the cruise configuration and both in and out of ground effect for the approach configuration. These data are intended to be a reference point to begin the analysis of the flight characteristics of the NASA terminal configured vehicle (TCV) and are presented without analysis.

Wind tunnel studies of Martian aeolian processes

NASA Technical Reports Server (NTRS)

Greeley, R.; Iversen, J. D.; Pollack, J. B.; Udovich, N.; White, B.

1973-01-01

Preliminary results are reported of an investigation which involves wind tunnel simulations, geologic field studies, theoretical model studies, and analyses of Mariner 9 imagery. Threshold speed experiments were conducted for particles ranging in specific gravity from 1.3 to 11.35 and diameter from 10.2 micron to 1290 micron to verify and better define Bagnold's (1941) expressions for grain movement, particularly for low particle Reynolds numbers and to study the effects of aerodynamic lift and surface roughness. Wind tunnel simulations were conducted to determine the flow field over raised rim craters and associated zones of deposition and erosion. A horseshoe vortex forms around the crater, resulting in two axial velocity maxima in the lee of the crater which cause a zone of preferential erosion in the wake of the crater. Reverse flow direction occurs on the floor of the crater. The result is a distinct pattern of erosion and deposition which is similar to some martian craters and which indicates that some dark zones around Martian craters are erosional and some light zones are depositional.

Thermodynamics of superconducting Nb3Al, Nb3Ge, Nb3Sn, and V3Ga

NASA Astrophysics Data System (ADS)

Mitrović, B.; Schachinger, E.; Carbotte, J. P.

1984-06-01

We have calculated the superconducting thermodynamic properties for several high-transition-temperature A15 compounds: Nb-Al, Nb-Ge, Nb-Sn, and V-Ga. In our calculations we have used the tunneling electron-phonon-coupling spectra α2F for all four systems considered, and in the case of Nb-Al and Nb-Ge we have also used α2F=CG, where G is the measured generalized phonon density of states and C is a constant. We find that all Nb-based A15 compounds display similar thermodynamic properties, which do not depend explicitly on the band density of states: 2Δ0κBTc≅4.6, ΔCγTc≅2.5-2.6,-Tc[dHc(T)dT]TcHc(0)≅2.1, γ[TcHc(0)]2≅0.134, and positive D(t)'s with the maximum value around 0.02. For Nb3Sn we find good agreement between the calculated properties and the old specific-heat experimental results (γ≅52 mJ/mol K2). The same applies to V3Ga, where the theoretical results have been compared with the experiments of Junod et al. However, we do not find good agreement between calculated ΔCγTc, - Tc[dHc(T)dT]TcHc(0), γ[TcHc(0)]2, and experimental values for Nb3Al and Nb3Ge, presumably due to broadened transitions. It is argued that the tunneling experiments underestimate the value of the gap which should be associated with the inverted α2F.

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy.

PubMed

Zou, Zhi-Qiang; Sun, Li-Min; Shi, Gao-Ming; Liu, Xiao-Yong; Li, Xu

2013-12-05

The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2p peaks of the film exhibit a lower spin-orbit splitting (-0.3 eV) and the Fe 2p3/2 level has a smaller full-width at half maximum (-0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the c (4 × 8) phase is in the FeSi2 stoichiometry regime. The c (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers.

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

PubMed Central

2013-01-01

The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2p peaks of the film exhibit a lower spin-orbit splitting (−0.3 eV) and the Fe 2p3/2 level has a smaller full-width at half maximum (−0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the c (4 × 8) phase is in the FeSi2 stoichiometry regime. The c (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers. PMID:24305438

In situ manufacture of magnetic tunnel junctions by a direct-write process

NASA Astrophysics Data System (ADS)

Costanzi, Barry N.; Riazanova, Anastasia V.; Dan Dahlberg, E.; Belova, Lyubov M.

2014-06-01

In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Long, Pengyu; Huang, Jun Z.; Povolotskyi, Michael; Sarangapani, Prasad; Valencia-Zapata, Gustavo A.; Kubis, Tillmann; Rodwell, Mark J. W.; Klimeck, Gerhard

2018-05-01

Tunnel Field Effect Transistors (FETs) have the potential to achieve steep Subthreshold Swing (S.S.) below 60 mV/dec, but their S.S. could be limited by trap-assisted tunneling (TAT) due to interface traps. In this paper, the effect of trap energy and location on OFF-current (IOFF) of tunnel FETs is evaluated systematically using an atomistic trap level representation in a full quantum transport simulation. Trap energy levels close to band edges cause the highest leakage. Wave function penetration into the surrounding oxide increases the TAT current. To estimate the effects of multiple traps, we assume that the traps themselves do not interact with each other and as a whole do not modify the electrostatic potential dramatically. Within that model limitation, this numerical metrology study points to the critical importance of TAT in the IOFF in tunnel FETs. The model shows that for Dit higher than 1012/(cm2 eV) IO F F is critically increased with a degraded IO N/IO F F ratio of the tunnel FET. In order to have an IO N/IO F F ratio higher than 104, the acceptable Dit near Ev should be controlled to no larger than 1012/(cm2 eV) .

3. East portal of Tunnel 34, view to southsouthwest, 135mm ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. East portal of Tunnel 34, view to south-southwest, 135mm lens with electronic flash fill. Note the shift, in these later tunnels east of Colfax, to concrete portal faces with granite masonry voussoirs and coping. - Central Pacific Transcontinental Railroad, Tunnel No. 34, Milepost 145.4, Colfax, Placer County, CA

Wind tunnel wall interference in V/STOL and high lift testing: A selected, annotated bibliography

NASA Technical Reports Server (NTRS)

Tuttle, M. H.; Mineck, R. E.; Cole, K. L.

1986-01-01

This bibliography, with abstracts, consists of 260 citations of interest to persons involved in correcting aerodynamic data, from high lift or V/STOL type configurations, for the interference arising from the wind tunnel test section walls. It provides references which may be useful in correcting high lift data from wind tunnel to free air conditions. References are included which deal with the simulation of ground effect, since it could be viewed as having interference from three tunnel walls. The references could be used to design tests from the standpoint of model size and ground effect simulation, or to determine the available testing envelope with consideration of the problem of flow breakdown. The arrangement of the citations is chronological by date of publication in the case of reports or books, and by date of presentation in the case of papers. Included are some documents of historical interest in the development of high lift testing techniques and wall interference correction methods. Subject, corporate source, and author indices, by citation numbers, have been provided to assist the users. The appendix includes citations of some books and documents which may not deal directly with high lift or V/STOL wall interference, but include additional information which may be helpful.

Predissociation of tif by tunneling

NASA Astrophysics Data System (ADS)

Wolf, U.; Tiemann, E.

1987-01-01

The UV spectra of the B 3Π 1-X 1Σ + transition in TIF were recorded applying frequency-doubled laser radiation and fluorescence or direct absorption detection. The observed J' -dependent predissociation in the upper levels v' = 2 and v' = 3 is explained quantitatively by invoking tunneling through a potential hump. The line positions and widths are fitted to a potential curve of the B 3Π 1 state using the semiclassical approximation for bound and quasibound levels.

3. East portal of Tunnel 27, view to northeast from ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. East portal of Tunnel 27, view to northeast from atop cut bank, 210mm lens. This view shows to good effect the original construction of the Harriman period tunnels, which were concreted fifty feet in from the portals with the balance being timber lined. In 1965 the east end of the tunnel collapsed, with the result that approximately 115 feet of the east end was 'daylighted' and the original east portal and concreted end were left in place, free-standing as seen here. - Central Pacific Transcontinental Railroad, Tunnel No. 27, Milepost 133.9, Applegate, Placer County, CA

Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, H. W.; Yang, J.; Li, Y. H.

2015-03-02

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Deposition of dual-layer coating on Ti6Al4V

NASA Astrophysics Data System (ADS)

Hussain Din, Sajad; Shah, M. A.; Sheikh, N. A.

2017-03-01

Dual-layer diamond coatings were deposited on titanium alloy (Ti6Al4V) using a hot filament chemical vapour deposition technique with the anticipation of studying the structural and morphology properties of the alloy. The coated diamond films were characterized using scanning electron microscope, x-ray diffraction (XRD), and Raman spectroscopy. The XRD studies reveal that the deposited films are highly crystalline in nature, whereas morphological studies show that the films have a cauliflower structure. XRD analysis was used to calculate the structural parameters of the Ti6Al4V and CVD-coated Ti6Al4V. Raman spectroscopy was used to determine the nature and magnitude of the residual stress of the coatings.

Surface atomic structure of alloyed Mn 5Ge 3(0 0 0 1) by scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Kim, Howon; Jung, Goo-Eun; Yoon, Jong Keon; Chung, Kyung Hoon; Kahng, Se-Jong

Surface atomic structure of Mn 5Ge 3(0 0 0 1) is studied by scanning tunneling microscopy. Hexagonal honeycomb ordering is observed at high energy levels, ∣ E - EF∣ ˜ 1.2 eV, on the flat regions of three-dimensional Mn 5Ge 3 islands. At low energy levels, ∣ E - EF∣ ˜ 0.5 eV, however, atomic images exhibit dot-array and ring-array structures, which show complete and partial contrast inversion, compared to the honeycomb ordering. Experimental observations are discussed on the basis of possible atomic models.

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

NASA Astrophysics Data System (ADS)

Talbo, V.; Mateos, J.; González, T.; Lechaux, Y.; Wichmann, N.; Bollaert, S.; Vasallo, B. G.

2015-10-01

Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I- MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design.

4. FIGUEROA STREET TUNNEL NO. 3, SOUTH PORTAL. SOLANO AVENUE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

4. FIGUEROA STREET TUNNEL NO. 3, SOUTH PORTAL. SOLANO AVENUE ENTRANCE LANE ON RIGHT. LOOKING 20°N. - Figueroa Street Tunnels, Mileposts 24.90, 25.14, 25.28, & 25.37 on Arroyo Seco Parkway, Los Angeles, Los Angeles County, CA

3. VIEW OF WIND TUNNEL, LOOKING NORTHWEST (1991). WrightPatterson ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. VIEW OF WIND TUNNEL, LOOKING NORTHWEST (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

DTIC Science & Technology

2006-12-01

single layer Si0 2 with similar EOT [19]. In Fig. 2, the solid symbols represent the typical I-V characteristics of an AI/(HfON-Si3N4)/Si structure. The...black curve (with open symbols ) is a simulated I-V curve for theoretical Si0 2 with the same EOT. It can be seen clearly that it takes only 3 volts for...R. Wasser , B. Reichenberg, and S. Tiedke, "Resistive switching mechanism of TiO 2 thin films grown by atomic-layer deposition", J. App/. Phys., vol

Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

PubMed Central

Sharma, Saumya; Khawaja, Mohamad; Ram, Manoj K; Goswami, D Yogi

2014-01-01

Summary The characterization of Langmuir–Blodgett thin films of 10,12-pentacosadiynoic acid (PDA) and their use in metal–insulator–metal (MIM) devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension–area isotherms of polymeric and monomeric PDA. Langmuir–Blodgett (LB, vertical deposition) and Langmuir–Schaefer (LS, horizontal deposition) techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass). The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current–voltage characteristics (I–V), and UV–vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures. PMID:25551052

Characterization of 10,12-pentacosadiynoic acid Langmuir-Blodgett monolayers and their use in metal-insulator-metal tunnel devices.

PubMed

Sharma, Saumya; Khawaja, Mohamad; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2014-01-01

The characterization of Langmuir-Blodgett thin films of 10,12-pentacosadiynoic acid (PDA) and their use in metal-insulator-metal (MIM) devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension-area isotherms of polymeric and monomeric PDA. Langmuir-Blodgett (LB, vertical deposition) and Langmuir-Schaefer (LS, horizontal deposition) techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass). The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current-voltage characteristics (I-V), and UV-vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current-voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni-PDA LB film-Ni structures.

26 CFR 3.3 - Nontaxability of deposits.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 26 Internal Revenue 14 2014-04-01 2013-04-01 true Nontaxability of deposits. 3.3 Section 3.3...) CAPITAL CONSTRUCTION FUND § 3.3 Nontaxability of deposits. (a) In general. Section 607(d) of the Act sets... section 607(b) and § 3.2. The specific treatment of deposits with respect to each of the subceilings is...

26 CFR 3.3 - Nontaxability of deposits.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 26 Internal Revenue 14 2011-04-01 2010-04-01 true Nontaxability of deposits. 3.3 Section 3.3...) CAPITAL CONSTRUCTION FUND § 3.3 Nontaxability of deposits. (a) In general. Section 607(d) of the Act sets... section 607(b) and § 3.2. The specific treatment of deposits with respect to each of the subceilings is...

26 CFR 3.3 - Nontaxability of deposits.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 26 Internal Revenue 14 2010-04-01 2010-04-01 false Nontaxability of deposits. 3.3 Section 3.3...) CAPITAL CONSTRUCTION FUND § 3.3 Nontaxability of deposits. (a) In general. Section 607(d) of the Act sets... section 607(b) and § 3.2. The specific treatment of deposits with respect to each of the subceilings is...

26 CFR 3.3 - Nontaxability of deposits.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 26 Internal Revenue 14 2012-04-01 2012-04-01 false Nontaxability of deposits. 3.3 Section 3.3...) CAPITAL CONSTRUCTION FUND § 3.3 Nontaxability of deposits. (a) In general. Section 607(d) of the Act sets... section 607(b) and § 3.2. The specific treatment of deposits with respect to each of the subceilings is...

26 CFR 3.3 - Nontaxability of deposits.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 26 Internal Revenue 14 2013-04-01 2013-04-01 false Nontaxability of deposits. 3.3 Section 3.3...) CAPITAL CONSTRUCTION FUND § 3.3 Nontaxability of deposits. (a) In general. Section 607(d) of the Act sets... section 607(b) and § 3.2. The specific treatment of deposits with respect to each of the subceilings is...

Knowledge-based system verification and validation

NASA Technical Reports Server (NTRS)

Johnson, Sally C.

1990-01-01

The objective of this task is to develop and evaluate a methodology for verification and validation (V&V) of knowledge-based systems (KBS) for space station applications with high reliability requirements. The approach consists of three interrelated tasks. The first task is to evaluate the effectiveness of various validation methods for space station applications. The second task is to recommend requirements for KBS V&V for Space Station Freedom (SSF). The third task is to recommend modifications to the SSF to support the development of KBS using effectiveness software engineering and validation techniques. To accomplish the first task, three complementary techniques will be evaluated: (1) Sensitivity Analysis (Worchester Polytechnic Institute); (2) Formal Verification of Safety Properties (SRI International); and (3) Consistency and Completeness Checking (Lockheed AI Center). During FY89 and FY90, each contractor will independently demonstrate the user of his technique on the fault detection, isolation, and reconfiguration (FDIR) KBS or the manned maneuvering unit (MMU), a rule-based system implemented in LISP. During FY91, the application of each of the techniques to other knowledge representations and KBS architectures will be addressed. After evaluation of the results of the first task and examination of Space Station Freedom V&V requirements for conventional software, a comprehensive KBS V&V methodology will be developed and documented. Development of highly reliable KBS's cannot be accomplished without effective software engineering methods. Using the results of current in-house research to develop and assess software engineering methods for KBS's as well as assessment of techniques being developed elsewhere, an effective software engineering methodology for space station KBS's will be developed, and modification of the SSF to support these tools and methods will be addressed.

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

PubMed Central

Ambrosio, Antonio; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

2015-01-01

Summary A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise. PMID:25821710

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube-silicon heterojunction.

PubMed

Aramo, Carla; Ambrosio, Antonio; Ambrosio, Michelangelo; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

2015-01-01

A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.

Electromagnetic receiver with capacitive electrodes and triaxial induction coil for tunnel exploration

NASA Astrophysics Data System (ADS)

Kai, Chen; Sheng, Jin; Wang, Shun

2017-09-01

A new type of electromagnetic (EM) receiver has been developed by integrating four capacitive electrodes and a triaxial induction coil with an advanced data logger for tunnel exploration. The new EM receiver can conduct EM observations in tunnels, which is one of the principal goals of surface-tunnel-borehole EM detection for deep ore deposit mapping. The use of capacitive electrodes enables us to record the electrical field (E-field) signals from hard rock surfaces, which are high-resistance terrains. A compact triaxial induction coil integrates three independent induction coils for narrow-tunnel exploration applications. A low-time-drift-error clock source is developed for tunnel applications where GPS signals are unavailable. The three main components of our tunnel EM receiver are: (1) four capacitive electrodes for measuring the E-field signal without digging in hard rock regions; (2) a triaxial induction coil sensor for audio-frequency magnetotelluric and controlled-source audio-frequency magnetotelluric signal measurements; and (3) a data logger that allows us to record five-component MT signals with low noise levels, low time-drift-error for the clock source, and high dynamic range. The proposed tunnel EM receiver was successfully deployed in a mine that exhibited with typical noise characteristics. [Figure not available: see fulltext. Caption: The new EM receiver can conduct EM observations in tunnels, which is one of the principal goals of the surface-tunnel-borehole EM (STBEM) detection for deep ore deposit mapping. The use of a capacitive electrode enables us to record the electrical field (E-field) signals from hard rock surfaces. A compact triaxial induction coil integrated three induction coils, for narrow-tunnel applications.

2. West portal of Tunnel 3, oblique view to northnorthwest, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. West portal of Tunnel 3, oblique view to north-northwest, 135mm lens. Note the simple concrete portal face and wingwalls, characteristic of the later (1923-27) period of construction on the Natron Cutoff. Note also the extreme surface spalling of the concrete, evidence of the severe freeze-thaw cycle at this elevation. - Southern Pacific Railroad Natron Cutoff, Tunnel 3, Milepost 537.77, Odell Lake, Klamath County, OR

Acoustic Survey of a 3/8-Scale Automotive Wind Tunnel

NASA Technical Reports Server (NTRS)

Booth, Earl R., Jr.; Romberg, Gary; Hansen, Larry; Lutz, Ron

1996-01-01

An acoustic survey that consists of insertion loss and flow noise measurements was conducted at key locations around the circuit of a 3/8-scale automotive acoustic wind tunnel. Descriptions of the test, the instrumentation, and the wind tunnel facility are included in the current report, along with data obtained in the test in the form of 1/3-octave-band insertion loss and narrowband flow noise spectral data.

Influence of solution deposition rate on properties of V{sub 2}O{sub 5} thin films deposited by spray pyrolysis technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abd–Alghafour, N. M., E-mail: na2013bil@gmail.com; Ahmed, Naser M.; Hassan, Zai

Vanadium oxide (V{sub 2}O{sub 5}) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl{sub 3} in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in themore » macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V{sub 2}O{sub 5} film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).« less

Nucleation and growth of dielectric films on III-V semiconductors during atomic layer deposition

NASA Astrophysics Data System (ADS)

Granados Alpizar, Bernal

In order to continue with metal-oxide-semiconductors (CMOS) transistor scaling and to reduce the power density, the channel should be replaced with a material having a higher electron mobility, such as a III-V semiconductor. However, the integration of III-V's is a challenge because these materials oxidize rapidly when exposed to air and the native oxide produced is characterized by a high density of defects. Deposition of high-k materials on III-V semiconductors using Atomic Layer Deposition (ALD) reduces the thickness of these oxides, improving the semiconductor/oxide interface quality and the transistor electrical characteristics. In this work, ALD is used to deposit two dielectrics, Al 2O3 and TiO2, on two III-V materials, GaAs and InGaAs, and in-situ X-ray photoelectron spectroscopy (XPS) and in-situ thermal programmed desorption (TPD) are used for interface characterization. Hydrofluoric acid (HF) etching of GaAs(100) and brief reoxidation in air produces a 9.0 ±1.6 Å-thick oxide overlayer containing 86% As oxides. The oxides are removed by 1 s pulses of trimethylaluminum (TMA) or TiCl4. TMA removes the oxide overlayer while depositing a 7.5 ± 1.6 Å thick aluminum oxide. The reaction follows a ligand exchange mechanism producing nonvolatile Al-O species that remain on the surface. TiCl4 exposure removes the oxide overlayer in the temperature range 89°C to 300°C, depositing approximately 0.04 monolayer of titanium oxide for deposition temperatures from 89°C to 135°C, but no titanium oxide is present from 170 °C to 230 °C. TiCl4 forms a volatile oxychloride product and removes O from the surface while leaving Cl atoms adsorbed to an elemental As layer, chemically passivating the surface. The native oxide of In0.53Ga0.47As(100) is removed using liquid HF and gas phase HF before deposition of Al2O3 using TMA and H2O at 170 °C. An aluminium oxide film with a thickness of 7.2 ± 1.2 Å and 7.3 ± 1.2 Å is deposited during the first pulse of TMA on

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

NASA Astrophysics Data System (ADS)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

2017-05-01

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.

CORRECTION FACTORS FOR COVARIANCE BETWEEN CONCENTRATION AND DEPOSITION VELOCITY ON CASTNET HNO3 DEPOSITION ESTIMATES

EPA Science Inventory

The covariance between hourly concentration (C) and deposition velocity (V) for various atmospheric; species may act to bias the, deposition (D) computed from the product of the weekly average C and 'V. This is a potential problem for the CASTNet filter pack (FP) species, nitric...

3. West portal of Tunnel 23, view to north, 135mm ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. West portal of Tunnel 23, view to north, 135mm lens. Concrete foundation in right foreground was from 'telltale,' a simple post-and-beam frame that spanned the tracks with lengths of rope suspended from the beam. In the days when brakemen were required to be on, and walk along, the tops of freight cars to set brakes, the 'telltale' ropes would strike the unwary to warn of the tunnel ahead, allowing them to lie flat and avoid being struck by the tunnel portal. - Central Pacific Transcontinental Railroad, Tunnel No. 23, Milepost 132.69, Applegate, Placer County, CA

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Lee, Gwan-Hyoung; Yu, Young-Jun; Lee, Changgu; Dean, Cory; Shepard, Kenneth L.; Kim, Philip; Hone, James

2011-12-01

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO2.

The aeolian wind tunnel

NASA Technical Reports Server (NTRS)

Iversen, J. D.

1991-01-01

The aeolian wind tunnel is a special case of a larger subset of the wind tunnel family which is designed to simulate the atmospheric surface layer winds to small scale (a member of this larger subset is usually called an atmospheric boundary layer wind tunnel or environmental wind tunnel). The atmospheric boundary layer wind tunnel is designed to simulate, as closely as possible, the mean velocity and turbulence that occur naturally in the atmospheric boundary layer (defined as the lowest portion of the atmosphere, of the order of 500 m, in which the winds are most greatly affected by surface roughness and topography). The aeolian wind tunnel is used for two purposes: to simulate the physics of the saltation process and to model at small scale the erosional and depositional processes associated with topographic surface features. For purposes of studying aeolian effects on the surface of Mars and Venus as well as on Earth, the aeolian wind tunnel continues to prove to be a useful tool for estimating wind speeds necessary to move small particles on the three planets as well as to determine the effects of topography on the evolution of aeolian features such as wind streaks and dune patterns.

3. West portal of Tunnel 26, view to northeast, 135mm ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. West portal of Tunnel 26, view to northeast, 135mm lens. Note use of granite voussoirs and coping on this otherwise all-reinforced concrete structure. - Central Pacific Transcontinental Railroad, Tunnel No. 26, Milepost 133.29, Applegate, Placer County, CA

Hydrodynamic Tunneling of 440 GeV SPS protons in Solid Material: Production of Warm Dense Matter at CERN HiRadMat Facility

NASA Astrophysics Data System (ADS)

Tahir, Naeem Ahmad; Blanco Sancho, Juan; Schmidt, Ruediger; Shutov, Alaxander; Burkart, Florian; Wollmann, Daniel; Piriz, Antonio Roberto

2013-10-01

Numerical simulations have shown that the range of 7 TeV LHC protons in solid matter will be significantly increased due to hydrodynamic tunneling. For example, in solid copper and solid carbon, these protons and the shower can penetrate up to 35 m and 25 m, respectively. However, their corresponding static range in the two materials is 1 m and 3 m, respectively. This will have important implications on machine protection design. In order to validate these simulation results, experiments have been performed at the CERN HiRadMat facility using the 440 GeV SPS proton beam irradiating solid copper cylindrical target. The phenomenon of hydrodynamic tunneling has been experimentally confirmed and good agreement has been found between the simulations and the experimental results. A very interesting outcome of this work is that the HiRadMat facility can be used to generate High Energy Density matter including Warm Dense Matter and strongly coupled plasmas in the laboratory.

Giant tunneling magnetoresistance and tunneling spin polarization in magnetic tunnel junctions with MgO (100) tunnel barriers

NASA Astrophysics Data System (ADS)

Parkin, Stuart

2006-03-01

Recent advances in generating, manipulating and detecting spin-polarized electrons and electrical current make possible new classes of spin based sensor, memory and logic devices [1]. One key component of many such devices is the magnetic tunneling junction (MTJ) - a sandwich of thin layers of metallic ferromagnetic electrodes separated by a tunneling barrier, typically an oxide material only a few atoms thick. The magnitude of the tunneling current passing through the barrier can be adjusted by varying the relative magnetic orientation of the adjacent ferromagnetic layers. As a result, MTJs can be used to sense the magnitude of magnetic fields or to store information. The electronic structure of the ferromagnet together with that of the insulator determines the spin polarization of the current through an MTJ -- the ratio of 'up' to 'down' spin electrons. Using conventional amorphous alumina tunnel barriers tunneling spin polarization (TSP) values of up to ˜55% are found for conventional 3d ferromagnets, such as CoFe, but using highly textured crystalline MgO tunnel barriers TSP values of more than 90% can be achieved for otherwise the same ferromagnet [2]. Such TSP values rival those previously observed only with half-metallic ferromagnets. Corresponding giant values of tunneling magnetoresistance (TMR) are found, exceeding 350% at room temperature and nearly 600% at 3K. Perhaps surprisingly the MgO tunnel barrier can be quite rough: its thickness depends on the local crystalline texture of the barrier, which itself is influenced by structural defects in the underlayer. We show that the magnitude and the sign of the TMR is strongly influenced by defects in the tunnel barrier and by the detailed structure of the barrier/ferromagnet interfaces. The observation of Kondo-assisted tunneling phenomena will be discussed as well as the detailed dependence of TMR on chemical bonding at the interfaces [3]. [1] .S.S.P. Parkin, X. Jiang, C. Kaiser, et al., Proc. IEEE 91, 661

Electron Tunneling in Junctions Doped with Semiconductors and Metals.

NASA Astrophysics Data System (ADS)

Bell, Lloyd Douglas, II

In this study, tunnel junctions incorporating thin layers of semiconductors and metals have been analyzed. Inelastic electron tunneling spectroscopy (IETS) was employed to yield high-resolution vibrational spectra of surface species deposited at the oxide-M_2 interface of M_1-M_1O _{rm x}-M _2 tunneling samples. Analysis was also performed on the elastic component of the tunneling current, yielding information on the tunnel barrier shape. The samples in this research exhibit a wide range of behavior. The IETS for Si, SiO_2, and Ge doped samples show direct evidence of SiH _{rm x} and GeH_ {rm x} formation. The particular species formed is shown to depend on the form of the evaporated dopant. Samples were also made with organic dopants deposited over the evaporated dopants. Many such samples show marked effects of the evaporated dopants on the inelastic peak intensities of the organic dopants. These alterations are correlated with the changed reactivity of the oxide surface coupled with a change in the OH dipole layer density on the oxide. Thicker organic dopant layers cause large changes in the elastic tunneling barrier due to OH layer alterations or the low barrier attributes of the evaporated dopant. In the cases of the thicker layers an extra current-carrying mechanism is shown to be contributing. Electron ejection from charge traps is proposed as an explanation for this extra current. The trend of barrier shape with dopant thickness is examined. Many of these dopants also produce a voltage-induced shift in the barrier shape which is stable at low temperature but relaxes at high temperature. This effect is similar to that produced by certain organic dopants and is explained by metastable bond formation between the surface OH and dopant. Other dopants, such as Al, Mg, and Fe, produce different effects. These dopants cause large I-V nonlinearity at low voltages. This nonlinearity is modeled as a giant zero-bias anomaly (ZBA) and fits are presented which show good

Superconducting phonon spectroscopy using a low-temperature scanning tunneling microscope

NASA Technical Reports Server (NTRS)

Leduc, H. G.; Kaiser, W. J.; Hunt, B. D.; Bell, L. D.; Jaklevic, R. C.

1989-01-01

The low-temperature scanning tunneling microscope (STM) system described by LeDuc et al. (1987) was used to observe the phonon density of states effects in a superconductor. Using techniques based on those employed in macroscopic tunneling spectroscopy, electron tunneling current-voltage (I-V) spectra were measured for NbN and Pb, and dI/dV vs V spectra were measured using standard analog derivative techniques. I-V measurements on NbN and Pb samples under typical STM conditions showed no evidence for multiparticle tunneling effects.

Spin filtering through ferromagnetic BiMn O3 tunnel barriers

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

2005-07-01

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Phonon-Mediated Tunneling into Graphene

NASA Astrophysics Data System (ADS)

Wehling, T. O.; Grigorenko, I.; Lichtenstein, A. I.; Balatsky, A. V.

2008-11-01

Recent scanning tunneling spectroscopy experiments on graphene reported an unexpected gap of about ±60meV around the Fermi level [V. W. Brar , Appl. Phys. Lett.APPLAB0003-6951 91, 122102 (2007); 10.1063/1.2771084Y. Zhang , Nature Phys.NPAHAX1745-2481 4, 627 (2008)10.1038/nphys1022]. Here we give a theoretical investigation explaining the experimentally observed spectra and confirming the phonon-mediated tunneling as the reason for the gap: We study the real space properties of the wave functions involved in the tunneling process by means of ab initio theory and present a model for the electron-phonon interaction, which couples the graphene’s Dirac electrons with quasifree-electron states at the Brillouin zone center. The self-energy associated with this electron-phonon interaction is calculated, and its effects on tunneling into graphene are discussed. Good agreement of the tunneling density of states within our model and the experimental dI/dU spectra is found.

Phonon mediated tunneling into graphene

NASA Astrophysics Data System (ADS)

Wehling, Tim; Grigorenko, Ilya; Lichtenstein, Alexander; Balatsky, Alexander

2009-03-01

Recent scanning tunneling spectroscopy experiments [V. W. Brar et al., Appl. Phys. Lett. 91, 122102 (2007); Y. Zhang et al., Nature Phys. 4, 627 (2008)] on graphene reported an unexpected gap of about ±60,eV around the Fermi level. Here, we give a theoretical investigation explaining the experimentally observed spectra and confirming the phonon mediated tunneling as the reason for the gap: We study the real space properties of the wave functions involved in the tunneling process by means of ab-initio theory and present a model for the electron-phonon interaction, which couples the graphene's Dirac electrons with quasi free electron states at the Brillouin zone center. The self-energy associated with this electron-phonon interaction is calculated and its effects on tunneling into graphene are discussed. In particular, good agreement of the tunneling density of states within our model and the experimental dI/dU spectra is found.

Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

NASA Astrophysics Data System (ADS)

Du, H. W.; Yang, J.; Li, Y. H.; Xu, F.; Xu, J.; Ma, Z. Q.

2015-03-01

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (Vbi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Santos, R.; Loureiro, J.; Nogueira, A.; Elangovan, E.; Pinto, J. V.; Veiga, J. P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I.

2013-10-01

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of -218 μV/K and electrical conductivity of 5.5 (Ω m)-1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Microcomputer based controller for the Langley 0.3-meter Transonic Cryogenic Tunnel

NASA Technical Reports Server (NTRS)

Balakrishna, S.; Kilgore, W. Allen

1989-01-01

Flow control of the Langley 0.3-meter Transonic Cryogenic Tunnel (TCT) is a multivariable nonlinear control problem. Globally stable control laws were generated to hold tunnel conditions in the presence of geometrical disturbances in the test section and precisely control the tunnel states for small and large set point changes. The control laws are mechanized as four inner control loops for tunnel pressure, temperature, fan speed, and liquid nitrogen supply pressure, and two outer loops for Mach number and Reynolds number. These integrated control laws have been mechanized on a 16-bit microcomputer working on DOS. This document details the model of the 0.3-m TCT, control laws, microcomputer realization, and its performance. The tunnel closed loop responses to small and large set point changes were presented. The controller incorporates safe thermal management of the tunnel cooldown based on thermal restrictions. The controller was shown to provide control of temperature to + or - 0.2K, pressure to + or - 0.07 psia, and Mach number to + or - 0.002 of a given set point during aerodynamic data acquisition in the presence of intrusive geometrical changes like flexwall movement, angle-of-attack changes, and drag rake traverse. The controller also provides a new feature of Reynolds number control. The controller provides a safe, reliable, and economical control of the 0.3-m TCT.

Aerodynamic characteristics of a 1/4 scale powered helicopter model with a V-type empennage. [conducted in the Langley V/STOL wind tunnel

NASA Technical Reports Server (NTRS)

Freeman, C. E.; Phelps, A. E., III; Mineck, R. E.

1978-01-01

An investigation was made in the Langley V/STOL tunnel to determine rotor induced effects on a 1/4-scale helicopter model with a conventional empennage and also a V-type empennage with dihedral angles of 45 deg, 50 deg, 55 deg, and 60 deg. Static longitudinal and lateral directional stability data are presented for rotor advance ratios of 0.057, 0.102, and 0.192 in level flight and climb attitudes. The data are presented without analysis or discussion.

Electrical characteristics of SiO2/ZrO2 hybrid tunnel barrier for charge trap flash memory

NASA Astrophysics Data System (ADS)

Choi, Jaeho; Bae, Juhyun; Ahn, Jaeyoung; Hwang, Kihyun; Chung, Ilsub

2017-08-01

In this paper, we investigate the electrical characteristics of SiO2/ZrO2 hybrid tunnel oxide in metal-Al2O3-SiO2-Si3N4-SiO2-silicon (MAONOS) structure in an effort to improve program and erase speed as well as retention characteristics. Inserting ZrO2 into the conventional MAONOS structure increased the programmed V th variation to 6.8 V, and increased the erased V th variation to -3.7 V at 17 MV/cm. The results can be understood in terms of reducing the Fowler-Nordheim (F/N) tunneling barrier due to high-k ZrO2 in the tunneling oxide. In addition, Zr diffusion in SiO2 caused the formation of Zr x Si1- x O2 at the interface region, which reduced the energy band gap of SiO2. The retention property of the hybrid tunnel oxide varied depending on the thickness of SiO2. For thin SiO2 less than 30 Å, the retention properties of the tunneling oxides were poor compared with those of the SiO2 only tunneling oxides. However, the hybrid tunneling oxides with SiO2 thickness thicker than 40 Å yielded improved retention behavior compared with those of the SiO2-only tunneling oxides. The detailed analysis in charge density of ZrO2 was carried out by ISPP test. The obtained charge density was quite small compared to that of the total charge density, which indicates that the inserted ZrO2 layer serves as a tunneling material rather than charge storage dielectric.

Computational Analysis of the Transonic Dynamics Tunnel Using FUN3D

NASA Technical Reports Server (NTRS)

Chwalowski, Pawel; Quon, Eliot; Brynildsen, Scott E.

2016-01-01

This paper presents results from an exploratory two-year effort of applying Computational Fluid Dynamics (CFD) to analyze the empty-tunnel flow in the NASA Langley Research Center Transonic Dynamics Tunnel (TDT). The TDT is a continuous-flow, closed circuit, 16- x 16-foot slotted-test-section wind tunnel, with capabilities to use air or heavy gas as a working fluid. In this study, experimental data acquired in the empty tunnel using the R-134a test medium was used to calibrate the computational data. The experimental calibration data includes wall pressures, boundary-layer profiles, and the tunnel centerline Mach number profiles. Subsonic and supersonic flow regimes were considered, focusing on Mach 0.5, 0.7 and Mach 1.1 in the TDT test section. This study discusses the computational domain, boundary conditions, and initial conditions selected and the resulting steady-state analyses using NASA's FUN3D CFD software.

Silicon-based hot electron emitting substrate with double tunneling

NASA Astrophysics Data System (ADS)

Chen, Fei; Zhan, Xinghua; Salcic, Zoran; Wong, Chee Cheong; Gao, Wei

2017-07-01

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the I-V characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler-Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

Simulating Small-Scale Experiments of In-Tunnel Airblast Using STUN and ALE3D

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neuscamman, Stephanie; Glenn, Lewis; Schebler, Gregory

2011-09-12

This report details continuing validation efforts for the Sphere and Tunnel (STUN) and ALE3D codes. STUN has been validated previously for blast propagation through tunnels using several sets of experimental data with varying charge sizes and tunnel configurations, including the MARVEL nuclear driven shock tube experiment (Glenn, 2001). The DHS-funded STUNTool version is compared to experimental data and the LLNL ALE3D hydrocode. In this particular study, we compare the performance of the STUN and ALE3D codes in modeling an in-tunnel airblast to experimental results obtained by Lunderman and Ohrt in a series of small-scale high explosive experiments (1997).

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

NASA Astrophysics Data System (ADS)

Zhu, H. X.; Zhang, T.; Wang, R. X.; Zhang, Y. Y.; Li, L. T.; Qiu, X. Y.

2016-05-01

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

16 CFR 3.33 - Depositions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Depositions. 3.33 Section 3.33 Commercial... ADJUDICATIVE PROCEEDINGS Discovery; Compulsory Process § 3.33 Depositions. (a) In general. Any party may take a deposition of any named person or of a person or persons described with reasonable particularity, provided...

16 CFR 3.33 - Depositions.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 16 Commercial Practices 1 2011-01-01 2011-01-01 false Depositions. 3.33 Section 3.33 Commercial... ADJUDICATIVE PROCEEDINGS Discovery; Compulsory Process § 3.33 Depositions. (a) In general. Any party may take a deposition of any named person or of a person or persons described with reasonable particularity, provided...

The role of sediment supply in esker formation and ice tunnel evolution

NASA Astrophysics Data System (ADS)

Burke, Matthew J.; Brennand, Tracy A.; Sjogren, Darren B.

2015-05-01

is less than the rate of thermo-mechanical ice tunnel growth. Here the ice tunnel enlarges faster than it fills with sediment and its evolution is independent of sedimentation, resulting in more uniform ice tunnel geometry. In these cases esker architecture is dominated by extensive vertical accretion of tabular units and ridge geometry is more uniform. 3) Where sediment is truly supply-limited the sedimentation rate is negligible regardless of water supply and, like scenario 2, ice tunnel growth is independent of sediment deposition, forming a relatively uniform ice tunnel (or eroding the bed). Because meltwater flows transport few gravel clasts the ice tunnel is not completely filled with gravel and, instead, saturated and pressurized diamicton or bedrock (if deformable) from beneath the surrounding ice is "squeezed" into the relatively low pressure ice tunnel during waning flow (or after ice tunnel shutdown), resulting in deformation of limited gravels deposited within the ice tunnel and a landform cored with diamicton or deformed bedrock, and with a relatively uniform ridge geometry. Our data demonstrate that an esker map is a minimum map of ice-walled channel location and that continued detailed investigation of morpho-sedimentary relationships is essential to gaining a complete picture of esker forming processes. Validating the morpho-sedimentary relationships identified in south-western Alberta (and other areas) with a larger data set may allow improved remote predictive esker mapping over larger areas and inferences to be made about spatial and temporal variations in esker depositional environments and ice tunnel evolution.

Resonance tunneling electron-vibrational spectroscopy of polyoxometalates.

PubMed

Dalidchik, F I; Kovalevskii, S A; Balashov, E M

2017-05-21

The tunneling spectra of the ordered monolayer films of decamolybdodicobaltate (DMDC) compounds deposited from aqueous solutions on HOPG were measured by scanning tunnel microscopy in air. The DMDC spectra, as well as the tunneling spectra of other polyoxometalates (POMs), exhibit well-defined negative differential resistances (NDRs). The mechanism of formation of these spectral features was established from the collection of revealed NDR dependences on the external varying parameters and found to be common to all systems exhibiting Wannier-Stark localization. A model of biresonance tunneling was developed to provide an explanation for the totality of experimental data, both the literature and original, on the tunneling POM probing. A variant of the tunneling electron-vibrational POM spectroscopy was proposed allowing the determination of the three basic energy parameters-energy gaps between the occupied and unoccupied states, frequencies of the vibrational transitions accompanying biresonance electron-tunneling processes, and electron-vibrational interaction constants on the monomolecular level.

Resonance tunneling electron-vibrational spectroscopy of polyoxometalates

PubMed Central

Dalidchik, F. I.; Kovalevskii, S. A.

2017-01-01

The tunneling spectra of the ordered monolayer films of decamolybdodicobaltate (DMDC) compounds deposited from aqueous solutions on HOPG were measured by scanning tunnel microscopy in air. The DMDC spectra, as well as the tunneling spectra of other polyoxometalates (POMs), exhibit well-defined negative differential resistances (NDRs). The mechanism of formation of these spectral features was established from the collection of revealed NDR dependences on the external varying parameters and found to be common to all systems exhibiting Wannier–Stark localization. A model of biresonance tunneling was developed to provide an explanation for the totality of experimental data, both the literature and original, on the tunneling POM probing. A variant of the tunneling electron-vibrational POM spectroscopy was proposed allowing the determination of the three basic energy parameters—energy gaps between the occupied and unoccupied states, frequencies of the vibrational transitions accompanying biresonance electron-tunneling processes, and electron-vibrational interaction constants on the monomolecular level. PMID:28527451

Dynamic 3d Modeling of a Canal-Tunnel Using Photogrammetric and Bathymetric Data

NASA Astrophysics Data System (ADS)

Moisan, E.; Heinkele, C.; Charbonnier, P.; Foucher, P.; Grussenmeyer, P.; Guillemin, S.; Koehl, M.

2017-02-01

This contribution introduces an original method for dynamically surveying the vault and underwater parts of a canal-tunnel for 3D modeling. The recording system, embedded on a barge, is composed of cameras that provide images of the above-water part of the tunnel, and a sonar that acquires underwater 3D profiles. In this contribution we propose to fully exploit the capacities of photogrammetry to deal with the issue of geo-referencing data in the absence of global positioning system (GPS) data. More specifically, we use it both for reconstructing the vault and side walls of the tunnel in 3D and for estimating the trajectory of the boat, which is necessary to rearrange sonar profiles to form the 3D model of the canal. We report on a first experimentation carried out inside a canal-tunnel and show promising preliminary results that illustrate the potentialities of the proposed approach.

3D-Printed Patient-Specific ACL Femoral Tunnel Guide from MRI.

PubMed

Rankin, Iain; Rehman, Haroon; Frame, Mark

2018-01-01

Traditional ACL reconstruction with non-anatomic techniques can demonstrate unsatisfactory long-term outcomes with regards instability and the degenerative knee changes observed with these results. Anatomic ACL reconstruction attempts to closely reproduce the patient's individual anatomic characteristics with the aim of restoring knee kinematics, in order to improve patient short and long-term outcomes. We designed an arthroscopic, patient-specific, ACL femoral tunnel guide to aid anatomical placement of the ACL graft within the femoral tunnel. The guide design was based on MRI scan of the subject's uninjured contralateral knee, identifying the femoral footprint and its anatomical position relative to the borders of the femoral articular cartilage. Image processing software was used to create a 3D computer aided design which was subsequently exported to a 3D-printing service. Transparent acrylic based photopolymer, PA220 plastic and 316L stainless steel patient-specific ACL femoral tunnel guides were created; the models produced were accurate with no statistical difference in size and positioning of the center of the ACL femoral footprint guide to MRI ( p =0.344, p =0.189, p =0.233 respectively). The guides aim to provide accurate marking of the starting point of the femoral tunnel in arthroscopic ACL reconstruction. This study serves as a proof of concept for the accurate creation of 3D-printed patient-specific guides for the anatomical placement of the femoral tunnel during ACL reconstruction.

Computational Analysis of the Transonic Dynamics Tunnel Using FUN3D

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chwalowski, Pawel; Quon, Eliot; Brynildsen, Scott E.

This paper presents results from an explanatory two-year effort of applying Computational Fluid Dynamics (CFD) to analyze the empty-tunnel flow in the NASA Langley Research Center Transonic Dynamics Tunnel (TDT). The TDT is a continuous-flow, closed circuit, 16- x 16-foot slotted-test-section wind tunnel, with capabilities to use air or heavy gas as a working fluid. In this study, experimental data acquired in the empty tunnel using the R-134a test medium was used to calibrate the computational data. The experimental calibration data includes wall pressures, boundary-layer profiles, and the tunnel centerline Mach number profiles. Subsonic and supersonic flow regimes were considered,more » focusing on Mach 0.5, 0.7 and Mach 1.1 in the TDT test section. This study discusses the computational domain, boundary conditions, and initial conditions selected in the resulting steady-state analyses using NASA's FUN3D CFD software.« less

Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

NASA Astrophysics Data System (ADS)

Kubo, Toshiharu; Freedsman, Joseph J.; Iwata, Yasuhiro; Egawa, Takashi

2014-04-01

Al2O3 deposited by atomic layer deposition (ALD) was used as an insulator in metal-insulator-semiconductor (MIS) structures for GaN-based MIS-devices. As the oxygen precursors for the ALD process, water (H2O), ozone (O3), and both H2O and O3 were used. The chemical characteristics of the ALD-Al2O3 surfaces were investigated by x-ray photoelectron spectroscopy. After fabrication of MIS-diodes and MIS-high-electron-mobility transistors (MIS-HEMTs) with the ALD-Al2O3, their electrical properties were evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The threshold voltage of the C-V curves for MIS-diodes indicated that the fixed charge in the Al2O3 layer is decreased when using both H2O and O3 as the oxygen precursors. Furthermore, MIS-HEMTs with the H2O + O3-based Al2O3 showed good dc I-V characteristics without post-deposition annealing of the ALD-Al2O3, and the drain leakage current in the off-state region was suppressed by seven orders of magnitude.

3. East portal of Tunnel 18, view to westsouthwest from ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. East portal of Tunnel 18, view to west-southwest from milepost 410.5, 210mm lens. The single-lens searchlight-type block signals are Southern Pacific Common Standard signals, a type in use since the 1920s. Many of these have been replaced system-wide as a result of various mergers since the 1980s. - Southern Pacific Railroad Natron Cutoff, Tunnel No. 18, Milepost 410, Dorris, Siskiyou County, CA

Hybrid tunnel junction contacts to III-nitride light-emitting diodes

NASA Astrophysics Data System (ADS)

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-02-01

In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Engineering Nanoscale Multiferroic Composites for Memory Applications with Atomic Layer Deposition of Pb(ZrxTi1-x)O3 Thin Films

NASA Astrophysics Data System (ADS)

Chien, Diana

This work focuses on the development of atomic layer deposition (ALD) for lead zirconate titanate, Pb(ZrxTi1-x)O 3 (PZT). Leveraging the surface-reaction controlled process based on alternating self-limiting surface reactions, PZT can be synthesized not only with elemental precision to realize the desired composition (Zr/Ti = 52/48) but also with outstanding conformality. The latter enables the integration of PZT with a ferromagnetic phase to realize multiferroism (MF) and magnetoelectric (ME) effect. Since PZT is one of the best known ferroelectric and piezoelectric materials due the large displacements of the Pb ions at the morphotropic phase boundary, PZT based MF composites could lead to stronger ME coupling through strain coupling at the interface. Specifically, ALD PZT thin films were synthesized by using beta-diketonate metalorganic precursors Pb(TMHD)2, Zr(TMHD)4, and Ti(O.i-Pr) 2(TMHD)2 and H2O. The number of local cycles and global cycles were regulated to achieve the desired stoichiometry and thickness, respectively. ALD of PZT was studied to obtain (100) textured PZT on Pt (111) oriented platinized silicon substrates. In order to attain a highly oriented PZT thin film, a (100) textured PbTiO3 seed layer was required because PZT orientation is governed by nucleation. MF nanocomposites were engineered using ALD PZT thin films to achieve controlled complex nanoscale structures, enabling porosity to be studied as a new additional parameter for nanocomposite architectures to enhance ME effect. Specifically, 3--6 nm-thick ALD PZT thin films were deposited to uniformly coat the walls of mesoporous cobalt ferrite (CFO) template. The PZT/CFO nanocomposites were electrically poled ex-situ and the change in magnetic moment was measured. The inverse magnetoelectric coupling coefficient, a, was determined to be 85.6 Oe-cm/mV. The in-plane results show no significant change in magnetization (1--4%) as a function of electric field, which was expected due to the effect

Tunneling study of SRF cavity-grade niobium.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Proslier, T.; Zasadzinski, J.; Cooley, L.

Niobium, with its very high H{sub C1}, has been used in superconducting radio frequency (SRF) cavities for accelerator systems for 40 years with continual improvement. The quality factor of cavities (Q) is governed by the surface impedance R{sub BCS}, which depends on the quasiparticle gap, delta, and the superfluid density. Both of these parameters are seriously affected by surface imperfections (metallic phases, dissolved oxygen, magnetic impurities). Loss mechanism and surface treatments of Nb cavities found to improve the Q factor are still unsolved mysteries. We present here an overview of the capabilities of the point contact tunneling spectroscopy and Atomicmore » layer deposition methods and how they can help understanding the High field Q-drop and the mild baking effect. Tunneling spectroscopy was performed on Nb pieces from the same processed material used to fabricate SRF cavities. Air exposed, electropolished Nb exhibited a surface superconducting gap Delta = 1.55 meV, characteristic of clean, bulk Nb, however the tunneling density of states (DOS) was broadened significantly. Nb pieces treated with the same mild baking used to improve the Q-slope in SRF cavities revealed a much sharper DOS. Good fits to the DOS are obtained using Shiba theory suggesting that magnetic scattering of quasiparticles is the origin of the degraded surface superconductivity and the Q-slope problem of Nb SRF cavities.« less

V2O5 thin film deposition for application in organic solar cells

NASA Astrophysics Data System (ADS)

Arbab, Elhadi A. A.; Mola, Genene Tessema

2016-04-01

Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

GABA action in immature neocortical neurons directly depends on the availability of ketone bodies.

PubMed

Rheims, Sylvain; Holmgren, Carl D; Chazal, Genevieve; Mulder, Jan; Harkany, Tibor; Zilberter, Tanya; Zilberter, Yuri

2009-08-01

In the early postnatal period, energy metabolism in the suckling rodent brain relies to a large extent on metabolic pathways alternate to glucose such as the utilization of ketone bodies (KBs). However, how KBs affect neuronal excitability is not known. Using recordings of single NMDA and GABA-activated channels in neocortical pyramidal cells we studied the effects of KBs on the resting membrane potential (E(m)) and reversal potential of GABA-induced anionic currents (E(GABA)), respectively. We show that during postnatal development (P3-P19) if neocortical brain slices are adequately supplied with KBs, E(m) and E(GABA) are both maintained at negative levels of about -83 and -80 mV, respectively. Conversely, a KB deficiency causes a significant depolarization of both E(m) (>5 mV) and E(GABA) (>15 mV). The KB-mediated shift in E(GABA) is largely determined by the interaction of the NKCC1 cotransporter and Cl(-)/HCO3 transporter(s). Therefore, by inducing a hyperpolarizing shift in E(m) and modulating GABA signaling mode, KBs can efficiently control the excitability of neonatal cortical neurons.

Knowledge based system verification and validation as related to automation of space station subsystems: Rationale for a knowledge based system lifecycle

NASA Technical Reports Server (NTRS)

Richardson, Keith; Wong, Carla

1988-01-01

The role of verification and validation (V and V) in software has been to support and strengthen the software lifecycle and to ensure that the resultant code meets the standards of the requirements documents. Knowledge Based System (KBS) V and V should serve the same role, but the KBS lifecycle is ill-defined. The rationale of a simple form of the KBS lifecycle is presented, including accommodation to certain critical KBS differences from software development.

Quantum electron tunneling in respiratory complex I.

PubMed

Hayashi, Tomoyuki; Stuchebrukhov, Alexei A

2011-05-12

We have simulated the atomistic details of electronic wiring of all Fe/S clusters in complex I, a key enzyme in the respiratory electron transport chain. The tunneling current theory of many-electron systems is applied to the broken-symmetry (BS) states of the protein at the ZINDO level. While the one-electron tunneling approximation is found to hold in electron tunneling between the antiferromagnetic binuclear and tetranuclear Fe/S clusters without major orbital or spin rearrangement of the core electrons, induced polarization of the core electrons contributes significantly to decrease the electron transfer rates to 19-56 %. Calculated tunneling energy is about 3 eV higher than Fermi level in the band gap of the protein, which supports that the mechanism of electron transfer is quantum mechanical tunneling, as in the rest of the electron transport chain. Resulting electron tunneling pathways consist of up to three key contributing protein residues between neighboring Fe/S clusters. A signature of the wave properties of electrons is observed as distinct quantum interferences when multiple tunneling pathways exist. In N6a-N6b, electron tunnels along different pathways depending on the involved BS states, suggesting possible fluctuations of the tunneling pathways driven by the local protein environment. The calculated distance dependence of the electron transfer rates with internal water molecules included is in good agreement with a reported phenomenological relation.

Highly doped layer for tunnel junctions in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

3. REAR OF NORTH PORTAL TUNNEL NO.4. PART 1 OF ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. REAR OF NORTH PORTAL TUNNEL NO.4. PART 1 OF 2 PART PANORAMA WITH PHOTOGRAPH CA-265-G-2-b. NOTE CONSTRUCTION MATERIALS FOR FREEWAY WIDENING OF HILL STREET EXIT. LOOKING 2°N. - Figueroa Street Tunnels, Mileposts 24.90, 25.14, 25.28, & 25.37 on Arroyo Seco Parkway, Los Angeles, Los Angeles County, CA

3. West portal of Tunnel 18, view to northeast, 135mm ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. West portal of Tunnel 18, view to northeast, 135mm lens. Note the use of concrete face and wingwalls, with dressed stone voussoirs, wingwall coping, parapet with stone belt course and coping, and coursed stone masonry slope protection flanking the portal. - Southern Pacific Railroad Natron Cutoff, Tunnel No. 17, Milepost 408, Dorris, Siskiyou County, CA

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

NASA Astrophysics Data System (ADS)

Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Jammaal Buatis, Kitz; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf

2017-08-01

Passivated contacts for solar cells can be realized using a variety of differently formed ultra-thin tunnel oxide layers. Assessing their interface properties is important for optimization purposes. In this work, we demonstrate the ability to measure the interface defect density distribution D it(E) and the fixed interface charge density Q f for ultra-thin passivation layers operating within the tunnel regime (<2 nm). Various promising tunnel layer candidates [i.e., wet chemically formed SiO x , UV photo-oxidized SiO x , and atomic layer deposited (ALD) AlO x ] are investigated for their potential application forming electron or hole selective tunnel layer passivated contacts. In particular, ALD AlO x is identified as a promising tunnel layer candidate for hole-extracting passivated contact formation, stemming from its high (negative) fixed interface charge density in the order of -6 × 1012 cm-2. This is an order of magnitude higher compared to wet chemically or UV photo-oxidized formed silicon oxide tunnel layers, while keeping the density of interface defect states D it at a similar level (in the order of ˜2 × 1012 cm-2 eV-1). This leads to additional field effect passivation and therefore to significantly higher measured effective carrier lifetimes (˜2 orders of magnitude). A surface recombination velocity of ˜40 cm/s has been achieved for a 1.5 nm thin ALD AlO x tunnel layer prior to capping by an additional hole transport material, like p-doped poly-Si or PEDOT:PSS.

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

PubMed Central

Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

2014-01-01

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

Improved ferroelectric polarization of V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films prepared by a chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, D. P.; University of Science and Technology of China, Hefei 230026; Yang, J., E-mail: jyang@issp.ac.cn

We prepared V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films on Pt/Ti/SiO{sub 2}/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films. The Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2P{sub r}) over 30 μC/cm{sup 2} in Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film compared with 10 μC/cm{sup 2} in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin film. It ismore » demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n = 5 Aurivillius thin films.« less

Quantum Electron Tunneling in Respiratory Complex I1

PubMed Central

Hayashi, Tomoyuki; Stuchebrukhov, Alexei A.

2014-01-01

We have simulated the atomistic details of electronic wiring of all Fe/S clusters in complex I, a key enzyme in the respiratory electron transport chain. The tunneling current theory of many-electron systems is applied to the broken-symmetry (BS) states of the protein at the ZINDO level. One-electron tunneling approximation is found to hold in electron tunneling between the anti-ferromagnetic binuclear and tetranuclear Fe/S clusters with moderate induced polarization of the core electrons. Calculated tunneling energy is about 3 eV higher than Fermi level in the band gap of the protein, which supports that the mechanism of electron transfer is quantum mechanical tunneling, as in the rest of electron transport chain. Resulting electron tunneling pathways consist of up to three key contributing protein residues between neighboring Fe/S clusters. A distinct signature of the wave properties of electrons is observed as quantum interferences when multiple tunneling pathways exist. In N6a-N6b, electron tunnels along different pathways depending on the involved BS states, suggesting possible fluctuations of the tunneling pathways driven by the local protein environment. The calculated distance dependence of the electron transfer rates with internal water molecules included are in good agreement with a reported phenomenological relation. PMID:21495666

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Tunneling measurement of quantum spin oscillations

NASA Astrophysics Data System (ADS)

Bulaevskii, L. N.; Hruška, M.; Ortiz, G.

2003-09-01

We consider the problem of tunneling between two leads via a localized spin 1/2 or any other microscopic system (e.g., a quantum dot) which can be modeled by a two-level Hamiltonian. We assume that a constant magnetic field B0 acts on the spin, that electrons in the leads are in a voltage driven thermal equilibrium, and that the tunneling electrons are coupled to the spin through exchange and spin-orbit interactions. Using the nonequilibrium Keldysh formalism we find the dependence of the spin-spin and current-current correlation functions on the applied voltage between leads V, temperature T, B0, and on the degree and orientation mα of spin polarization of the electrons in the right (α=R) and left (α=L) leads. We show the following (a) The spin-spin correlation function exhibits a peak at the Larmor frequency, ωL, corresponding to the effective magnetic field B acting upon the spin as determined by B0 and the exchange field induced by tunneling of spin-polarized electrons. (b) If the mα’s are not parallel to B the second-order derivative of the average tunneling current I(V) with respect to V is proportional to the spectral density of the spin-spin correlation function, i.e., exhibits a peak at the voltage V=ħωL/e. (c) In the same situation when V>B the current-current correlation function exhibits a peak at the same frequency. (d) The signal-to-noise (shot-noise) ratio R for this peak reaches a maximum value of order unity, R⩽4, at large V when the spin is decoupled from the environment and the electrons in both leads are fully polarized in the direction perpendicular to B. (e) R≪1 if the electrons are weakly polarized, or if they are polarized in a direction close to B0, or if the spin interacts with the environment stronger than with the tunneling electrons. Our results of a full quantum-mechanical treatment of the tunneling-via-spin model when V≫B are in agreement with those previously obtained in the quasiclassical approach. We discuss also the

8 CFR 341.3 - Depositions.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 8 Aliens and Nationality 1 2011-01-01 2011-01-01 false Depositions. 341.3 Section 341.3 Aliens and... Depositions. If satisfied that a witness whose testimony is essential is not available for examination in the United States, the assigned officer may authorize the taking of a deposition abroad by written...

8 CFR 341.3 - Depositions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 8 Aliens and Nationality 1 2010-01-01 2010-01-01 false Depositions. 341.3 Section 341.3 Aliens and... Depositions. If satisfied that a witness whose testimony is essential is not available for examination in the United States, the assigned officer may authorize the taking of a deposition abroad by written...

Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Buchanan, J. D. R.; Hase, T. P. A.; Tanner, B. K.; Hughes, N. D.; Hicken, R. J.

2002-07-01

The barrier thickness in magnetic spin-dependent tunnel junctions with Al2O3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al2O3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness.

Quasi-particle properties from tunneling in the v = 5/2 fractional quantum Hall state.

PubMed

Radu, Iuliana P; Miller, J B; Marcus, C M; Kastner, M A; Pfeiffer, L N; West, K W

2008-05-16

Quasi-particles with fractional charge and statistics, as well as modified Coulomb interactions, exist in a two-dimensional electron system in the fractional quantum Hall (FQH) regime. Theoretical models of the FQH state at filling fraction v = 5/2 make the further prediction that the wave function can encode the interchange of two quasi-particles, making this state relevant for topological quantum computing. We show that bias-dependent tunneling across a narrow constriction at v = 5/2 exhibits temperature scaling and, from fits to the theoretical scaling form, extract values for the effective charge and the interaction parameter of the quasi-particles. Ranges of values obtained are consistent with those predicted by certain models of the 5/2 state.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Room-temperature resonant quantum tunneling transport of macroscopic systems.

PubMed

Xiong, Zhengwei; Wang, Xuemin; Yan, Dawei; Wu, Weidong; Peng, Liping; Li, Weihua; Zhao, Yan; Wang, Xinmin; An, Xinyou; Xiao, Tingting; Zhan, Zhiqiang; Wang, Zhuo; Chen, Xiangrong

2014-11-21

A self-assembled quantum dots array (QDA) is a low dimensional electron system applied to various quantum devices. This QDA, if embedded in a single crystal matrix, could be advantageous for quantum information science and technology. However, the quantum tunneling effect has been difficult to observe around room temperature thus far, because it occurs in a microcosmic and low temperature condition. Herein, we show a designed a quasi-periodic Ni QDA embedded in a single crystal BaTiO3 matrix and demonstrate novel quantum resonant tunneling transport properties around room-temperature according to theoretical calculation and experiments. The quantum tunneling process could be effectively modulated by changing the Ni QDA concentration. The major reason was that an applied weak electric field (∼10(2) V cm(-1)) could be enhanced by three orders of magnitude (∼10(5) V cm(-1)) between the Ni QDA because of the higher permittivity of BaTiO3 and the 'hot spots' of the Ni QDA. Compared with the pure BaTiO3 films, the samples with embedded Ni QDA displayed a stepped conductivity and temperature (σ-T curves) construction.

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE PAGES

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.; ...

2017-10-18

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Review of design and operational characteristics of the 0.3-meter transonic cryogenic tunnel

NASA Technical Reports Server (NTRS)

Ray, E. J.; Ladson, C. L.; Adcock, J. B.; Lawing, P. L.; Hall, R. M.

1979-01-01

The fundamentals of cryogenic testing are validated both analytically and experimentally employing the 0.3-m transonic cryogenic tunnel. The tunnel with its unique Reynolds number capability has been used for a wide variety of aerodynamic tests. Techniques regarding real-gas effects have been developed and cryogenic tunnel conditions are set and maintained accurately. It is shown that cryogenic cooling, by injecting nitrogen directly into the tunnel circuit, imposes no problems with temperature distribution or dynamic response characteristics.

Resonant tunneling across a ferroelectric domain wall

NASA Astrophysics Data System (ADS)

Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

2018-04-01

Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

Transport properties and c/a ratio of V{sub 2}O{sub 3} thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Joe; Limelette, Patrice; Funakubo, Hiroshi

2015-12-14

We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratiosmore » were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.« less

Electron Trap Energy Distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 Layers on Silicon

NASA Astrophysics Data System (ADS)

Wang, W. C.; Badylevich, M.; Adelmann, C.; Swerts, J.; Kittl, J. A.; Afanas'ev, V. V.

2012-12-01

The energy distribution of electron trap density in atomic layer deposited Al2O3, LaAl4Ox and GdyAl2-yO3 insulating layers was studied by using the exhaustive photodepopulation spectroscopy. Upon filling the traps by electron tunneling from Si substrate, a broad energy distribution of trap levels in the energy range 2-4 eV is found in all studied insulators with trap densities in the range of 1012 cm-2eV-1. The incorporation of La and Gd cations reduces the trap density in aluminate layers as compared to Al2O3. Crystallization of the insulator by the post-deposition annealing is found to increase the trap density while the energy distribution remains unchanged. The similar trap spectra in the Al2O3 and La or Gd aluminate layers suggest the common nature of the traps, probably originating from imperfections in the AlOx sub-network.

Klein tunneling in the α -T3 model

NASA Astrophysics Data System (ADS)

Illes, E.; Nicol, E. J.

2017-06-01

We investigate Klein tunneling for the α -T3 model, which interpolates between graphene and the dice lattice via parameter α . We study transmission across two types of electrostatic interfaces: sharp potential steps and sharp potential barriers. We find both interfaces to be perfectly transparent for normal incidence for the full range of the parameter α for both interfaces. For other angles of incidence, we find that transmission is enhanced with increasing α . For the dice lattice, we find perfect, all-angle transmission across a potential step for incoming electrons with energy equal to half of the height of the potential step. This is analogous to the "super", all-angle transmission reported for the dice lattice for Klein tunneling across a potential barrier.

Studies on annealed ZnO:V thin films deposited by nebulised spray pyrolysis method

NASA Astrophysics Data System (ADS)

Malini, D. Rachel

2018-04-01

Structural, optical and photoluminescence properties of annealed ZnO:V thin films deposited by nebulized spray pyrolysis technique by varying vanadium concentration are studied. Thickness of thin films varies from 1.52µm to 7.78µm. V2O5, VO2 and ZnO peaks are observed in XRD patterns deposited with high vanadium concentration and the intensity of peaks corresponding to ZnO decreases in those samples. Morphological properties were studied by analysing SEM images and annealed thin films deposited at ZnO:V = 50:50 possess dumb bell shape grains. Emission peaks corresponding to both Augur transition and deep level transition are observed in the PL spectra of the samples.

Aerosol deposition on plant leaves

Treesearch

James B. Wedding; Roger W. Carlson; James J. Stukel; Fakhri A. Bazzaz

1976-01-01

An aerosol generator and wind tunnel system designed for use in aerosol deposition is described. Gross deposition on rough pubescent leaves was nearly 7 times greater than on smooth, waxy leaves. Results suggest that aerosol deposition, on a per unit area basis, for single horizontal streamlining leaves is similar to that for arrays of leaves under similar flow...

High sensitivity of tunneling spin polarization to chemical bonding of transition metal ferromagnetic alloys at interface with insulating barrier

NASA Astrophysics Data System (ADS)

Yang, See-Hun; Yang, Hyunsoo; Kaiser, Christian; Parkin, Stuart

2006-03-01

We report that the tunneling spin polarization (TSP) is found to be strongly influenced by the amount of oxygen used in the deposition of the tunnel barrier itself that chemical bonding at the interface between Al2O3 and ferromagnetic Co and Co-Pt alloys. For reactive sputter (RS) deposition of alumina using an argon-oxygen gas mixture with a low concentration of oxygen (˜0.1 mTorr), much lower TSP values are found than when the alumina barrier is formed by post-plasma oxidation (PO) with ˜100mTorr oxygen of Al layers. X-ray absorption spectroscopy (XAS) has been used to characterize the chemical bonding at the Co or Co-Pt/Al2O3 interface. These studies show that Co-O bonds are much more formed for the barrier fromed by PO of Al than for that formed by RS deposition. We attribute the changes in TSP to changes in the relative tunneling probabilities from Co and Pt which are strongly influenced by oxygen bond formation.^1 ^1C. Kaiser, S. van Dijken, S.-H. Yang, H. Yang, and S. S. P. Parkin, Phys. Rev. Lett. 94, 247203 (2005).

InP tunnel junction for InGaAs/InP tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

PubMed

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons

NASA Astrophysics Data System (ADS)

Kyser, David F.; Eib, Nicholas K.; Ritchie, Nicholas W. M.

2016-07-01

The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to calculate the energy density as a function of the incident aerial flux (EUV: mJ/cm2, EB: μC/cm2). Monte Carlo calculations for electron exposure are utilized, and a Lambert-Beer model for EUV absorption. The ratio of electron flux to photon flux which results in equivalent energy density is calculated for a typical organic chemically amplified resist film and a typical inorganic metal-oxide film. This ratio can be used to screen EUV resist materials with EB measurements and accelerate advances in EUV resist systems.

Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film

NASA Astrophysics Data System (ADS)

Sun, Guangyao; Cao, Xun; Gao, Xiang; Long, Shiwei; Liang, Mengshi; Jin, Ping

2016-10-01

For VO2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. Here, the thermochromic films of VO2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V2O3 interlayer. V2O3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO2 film. The VO2/V2O3 films display high solar modulating ability and narrow hysteresis loop. Our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

Tunneling spin polarization in planar tunnel junctions: measurements using NbN superconducting electrodes and evidence for Kondo-assisted tunneling

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo

2006-03-01

The fundamental origin of tunneling magnetoresistance in magnetic tunnel junctions (MTJs) is the spin-polarized tunneling current, which can be measured directly using superconducting tunneling spectroscopy (STS). The STS technique was first developed by Meservey and Tedrow using aluminum superconducting electrodes. Al has been widely used because of its low spin orbit scattering. However, measurements must be made at low temperatures (<0.4 K) because of the low superconducting transition temperature of Al. Here, we demonstrate that superconducting electrodes formed from NbN can be used to measure tunneling spin polarization (TSP) at higher temperatures up to ˜1.2K. The tunneling magnetoresistance and polarization of the tunneling current in MTJs is highly sensitive to the detailed structure of the tunneling barrier. Using MgO tunnel barriers we find TSP values as high as 90% at 0.25K. The TMR is, however, depressed by insertion of ultra thin layers of both non-magnetic and magnetic metals in the middle of the MgO barrier. For ultra-thin, discontinuous magnetic layers of CoFe, we find evidence of Kondo assisted tunneling, from increased conductance at low temperatures (<50K) and bias voltage (<20 mV). Over the same temperature and bias voltage regimes the tunneling magnetoresistance is strongly depressed. We present other evidence of Kondo resonance including the logarithmic temperature dependence of the zero bias conductance peak. We infer the Kondo temperature from both the spectra width of this conductance peak as well as the temperature dependence of the TMR depression. The Kondo temperature is sensitive to the thickness of the inserted CoFe layer and decreases with increased CoFe thickness. * performed in collaboration with S-H. Yang, C. Kaiser, and S. Parkin.

5. SANDBOX BETWEEN TUNNELS 12. SANTA ANA NO. 3, EXHIBIT ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. SANDBOX BETWEEN TUNNELS 1-2. SANTA ANA NO. 3, EXHIBIT L, JAN. 25, 1956. SCE drawing no. 541727 (sheet 2; for filing with Federal Power Commission). - Santa Ana River Hydroelectric System, Sandbox, SAR-3 Flowline, Redlands, San Bernardino County, CA

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

Reliability of a semi-automated 3D-CT measuring method for tunnel diameters after anterior cruciate ligament reconstruction: A comparison between soft-tissue single-bundle allograft vs. autograft.

PubMed

Robbrecht, Cedric; Claes, Steven; Cromheecke, Michiel; Mahieu, Peter; Kakavelakis, Kyriakos; Victor, Jan; Bellemans, Johan; Verdonk, Peter

2014-10-01

Post-operative widening of tibial and/or femoral bone tunnels is a common observation after ACL reconstruction, especially with soft-tissue grafts. There are no studies comparing tunnel widening in hamstring autografts versus tibialis anterior allografts. The goal of this study was to observe the difference in tunnel widening after the use of allograft vs. autograft for ACL reconstruction, by measuring it with a novel 3-D computed tomography based method. Thirty-five ACL-deficient subjects were included, underwent anatomic single-bundle ACL reconstruction and were evaluated at one year after surgery with the use of 3-D CT imaging. Three independent observers semi-automatically delineated femoral and tibial tunnel outlines, after which a best-fit cylinder was derived and the tunnel diameter was determined. Finally, intra- and inter-observer reliability of this novel measurement protocol was defined. In femoral tunnels, the intra-observer ICC was 0.973 (95% CI: 0.922-0.991) and the inter-observer ICC was 0.992 (95% CI: 0.982-0.996). In tibial tunnels, the intra-observer ICC was 0.955 (95% CI: 0.875-0.985). The combined inter-observer ICC was 0.970 (95% CI: 0.987-0.917). Tunnel widening was significantly higher in allografts compared to autografts, in the tibial tunnels (p=0.013) as well as in the femoral tunnels (p=0.007). To our knowledge, this novel, semi-automated 3D-computed tomography image processing method has shown to yield highly reproducible results for the measurement of bone tunnel diameter and area. This series showed a significantly higher amount of tunnel widening observed in the allograft group at one-year follow-up. Level II, Prospective comparative study. Copyright © 2014 Elsevier B.V. All rights reserved.

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Greenaway, Ann; Boucher, Jason

2016-02-10

epitaxial ternary GaAsxP 1-x and In 0.5Ga 0.5P alloys, with composition set by the ratio of GaAs/GaP or InP/GaP mixed as the source powder. GaAs 0.3P 0.7 has the appropriate bandgap to serve as a top cell on Si and In 0.5Ga 0.5P is near the composition used as a surface passivation layer on GaAs pn junction photovoltaics. In the final task we demonstrated III-V selective area epitaxy using CSVT as a first step toward the growth of III-V micro- or nanostructures for an integrated tandem solar cell on Si. We also found that direct epitaxial growth on Si appears to be impossible in the current H 2O-CSVT reactor design, likely due to the formation of SiO x. This work sets the stage for targeted development of an improved CSVT process and for the scale up of the proof-of-concept work from a research to manufacturing-relevant platform. Replacing H 2O as a transport agent with HCl would provide the ability to deposit directly on Si by avoiding oxide formation and to allow for the deposition of Al-containing alloys that would otherwise oxidize. Improved engineering design and implementation of an in-line multi-station CSVT would allow for direct deposition of device structures in a single system.« less

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing.

PubMed

Song, Gwang Yeom; Oh, Chadol; Sinha, Soumyadeep; Son, Junwoo; Heo, Jaeyeong

2017-07-19

Atomic layer deposition was adopted to deposit VO x thin films using vanadyl tri-isopropoxide {VO[O(C 3 H 7 )] 3 , VTIP} and water (H 2 O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO x . The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO 2 and V 2 O 5 phases, respectively. The possible band structures of the crystalline VO 2 and V 2 O 5 thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V 2 O 5 and VO 2 films, respectively.

View down tank tunnel (tunnel no. 2) showing pipes and ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View down tank tunnel (tunnel no. 2) showing pipes and walkway of metal grating, side tunnel to tank 3 is on the left - U.S. Naval Base, Pearl Harbor, Diesel Purification Plant, North Road near Pierce Street, Pearl City, Honolulu County, HI

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Boeckl, John J.; Brown, Jeff L.; Tetlak, Stephen E.; Green, Andrew J.; Moser, Neil A.; Crespo, Antonio; Thomson, Darren B.; Fitch, Robert C.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-07-01

Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (20 1 ¯ ) orientation. An average conductivity of 732 S cm-1 with a mobility of 26.5 cm2 V-1 s-1 and a carrier concentration of 1.74 × 1020 cm-3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.

STM-electroluminescence from clustered C3N4 nanodomains synthesized via green chemistry process.

PubMed

Andrade, E P; Costa, B B A; Chaves, C R; de Paula, A M; Cury, L A; Malachias, A; Safar, G A M

2018-01-01

A Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and synchrotron X-ray diffraction study on clustered C 3 N 4 nanoparticles (nanoflakes) is conducted on green-chemistry synthesized samples obtained from chitosan through high power sonication. Morphological aspects and the electronic characteristics are investigated. The observed bandgap of the nanoflakes reveals the presence of different phases in the material. Combining STM morphology, STS spectra and X-ray diffraction (XRD) results one finds that the most abundant phase is graphitic C 3 N 4 . A high density of defects is inferred from the XRD measurements. Additionally, STM-electroluminescence (STMEL) is detected in C 3 N 4 nanoflakes deposited on a gold substrate. The tunneling current creates photons that are three times more energetic than the tunneling electrons of the STM sample. We ponder about the two most probable models to explain the observed photon emission energy: either a nonlinear optical phenomenon or a localized state emission. Copyright © 2017 Elsevier B.V. All rights reserved.

3. EAST SIDE FROM ATOP TUNNEL, SHOWING BLAST SHIELDED WINDOWS ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. EAST SIDE FROM ATOP TUNNEL, SHOWING BLAST SHIELDED WINDOWS AND PERISCOPE FACING TO TEST STAND 1-3. - Edwards Air Force Base, Air Force Rocket Propulsion Laboratory, Instrumentation & Control Building, Test Area 1-115, northwest end of Saturn Boulevard, Boron, Kern County, CA

11. INTAKE FLUME AND TUNNEL SECTIONS, SANTA ANA NO. 3, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

11. INTAKE FLUME AND TUNNEL SECTIONS, SANTA ANA NO. 3, EXHIBIT L, JAN. 25, 1956. SCE drawing no. 541728 (sheet 1; for filing with Federal Power Commission). - Santa Ana River Hydroelectric System, Warm Springs Canyon-SAR-3 Flumes, Redlands, San Bernardino County, CA

Pressure distribution on a vectored-thrust V/STOL fighter in the transition-speed range. [wind tunnel tests to measure pressure distribution on body and wing

NASA Technical Reports Server (NTRS)

Mineck, R. E.; Margason, R. J.

1974-01-01

A wind-tunnel investigation has been conducted in the Langley V/STOL tunnel with a vectored-thrust V/STOL fighter configuration to obtain detailed pressure measurements on the body and on the wing in the transition-speed range. The vectored-thrust jet exhaust induced a region of negative pressure coefficients on the lower surface of the wing and on the bottom of the fuselage. The location of the jet exhaust relative to the wing was a major factor in determining the extent of the region of negative pressure coefficients.

Structure and enhanced thermochromic performance of low-temperature fabricated VO 2/V 2O 3 thin film

DOE PAGES

Sun, Guangyao; Cao, Xun; Gao, Xiang; ...

2016-10-06

For VO 2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. In this paper, the thermochromic films of VO 2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V 2O 3 interlayer. V 2O 3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO 2 film. The VO 2/V 2O 3 films display high solar modulating ability and narrow hysteresis loop. Finally, our data can serve as a promising point formore » industrial production with high degree of crystallinity at a low temperature.« less

Scanning tunneling microscopy study of graphene on Au(111): Growth mechanisms and substrate interactions

NASA Astrophysics Data System (ADS)

Nie, Shu; Bartelt, Norman C.; Wofford, Joseph M.; Dubon, Oscar D.; McCarty, Kevin F.; Thürmer, Konrad

2012-05-01

We use scanning tunneling microscopy to study the structure of graphene islands on Au(111) grown by deposition of elemental carbon at 950 °C. Consistent with low-energy electron microscopic observations, we find that the graphene islands have dendritic shapes. The islands tend to cover depressed regions of the Au surface, suggesting that Au is displaced as the graphene grows. If small tunneling currents are used, it is possible to image simultaneously the graphene/Au moiré and the Au herringbone reconstruction, which forms underneath the graphene on cooling from the growth temperature. The delicate herringbone structure and its periodicity remain unchanged from the bare Au surface. Using a Frenkel-Kontorova model, we deduce that this striking observation is consistent with an attraction between graphene and Au of less than 13 meV per C atom. Raman spectroscopy supports this weak interaction. However, at the tunneling currents necessary for atomic-resolution imaging of graphene, the Au reconstruction is altered, implying influential tip-sample interactions and a mobile Au surface beneath the graphene.

Railway Tunnel Clearance Inspection Method Based on 3D Point Cloud from Mobile Laser Scanning

PubMed Central

Zhou, Yuhui; Wang, Shaohua; Mei, Xi; Yin, Wangling; Lin, Chunfeng; Mao, Qingzhou

2017-01-01

Railway tunnel clearance is directly related to the safe operation of trains and upgrading of freight capacity. As more and more railway are put into operation and the operation is continuously becoming faster, the railway tunnel clearance inspection should be more precise and efficient. In view of the problems existing in traditional tunnel clearance inspection methods, such as low density, slow speed and a lot of manual operations, this paper proposes a tunnel clearance inspection approach based on 3D point clouds obtained by a mobile laser scanning system (MLS). First, a dynamic coordinate system for railway tunnel clearance inspection has been proposed. A rail line extraction algorithm based on 3D linear fitting is implemented from the segmented point cloud to establish a dynamic clearance coordinate system. Second, a method to seamlessly connect all rail segments based on the railway clearance restrictions, and a seamless rail alignment is formed sequentially from the middle tunnel section to both ends. Finally, based on the rail alignment and the track clearance coordinate system, different types of clearance frames are introduced for intrusion operation with the tunnel section to realize the tunnel clearance inspection. By taking the Shuanghekou Tunnel of the Chengdu–Kunming Railway as an example, when the clearance inspection is carried out by the method mentioned herein, its precision can reach 0.03 m, and difference types of clearances can be effectively calculated. This method has a wide application prospects. PMID:28880232

Review of design and operational characteristics of the 0.3-meter transonic cryogenic tunnel

NASA Technical Reports Server (NTRS)

Ray, E. J.; Ladson, C. L.; Adcock, J. B.; Lawing, P. L.; Hall, R. M.

1979-01-01

The past 6 years of operation with the NASA Langley 0.3 m transonic cryogenic tunnel (TCT) show that there are no insurmountable problems associated with cryogenic testing with gaseous nitrogen at transonic Mach numbers. The fundamentals of the concept were validated both analytically and experimentally and the 0.3 m TCT, with its unique Reynolds number capability, was used for a wide variety of aerodynamic tests. Techniques regarding real-gas effects were developed and cryogenic tunnel conditions can be set and maintained accurately. Cryogenic cooling by injecting liquid nitrogen directly into the tunnel circuit imposes no problems with temperature distribution or dynamic response characteristics. Experience with the 0.3 m TCT, indicates that there is a significant learning process associated with cryogenic, high Reynolds number testing. Many of the questions have already been answered; however, factors such as tunnel control, run logic, economics, instrumentation, and model technology present many new and challenging problems.

Biocompatibility of Mg Ion Doped Hydroxyapatite Films on Ti-6Al-4V Surface by Electrochemical Deposition.

PubMed

Lee, Kang; Choe, Han-Cheol

2016-02-01

In this study, we prepared magnesium (Mg) doped nano-phase hydroxyapatite (HAp) films on the TiO2 nano-network surface using electrochemical deposition method. Ti-6Al-4V ELI surface was anodized in 5 M NaOH solution at 0.3 A for 10 min. Nano-network TiO2 surface were formed by these anodization steps which acted as templates and anchorage for growth of the Mg doped HAp during subsequent pulsed electrochemical deposition process at 85 degrees C. The phase and morphologies of HAp deposits were influenced by the Mg ion concentration.

Tunneling Spectra of a Quasifreestanding Graphene Monolayer

NASA Astrophysics Data System (ADS)

Li, Si-Yu; Bai, Ke-Ke; Zuo, Wei-Jie; Liu, Yi-Wen; Fu, Zhong-Qiu; Wang, Wen-Xiao; Zhang, Yu; Yin, Long-Jing; Qiao, Jia-Bin; He, Lin

2018-05-01

Considering the great success of scanning-tunneling-microscopy (STM) studies of graphene in the past ten years, it is quite surprising to notice that there is still a fundamental contradiction in the reported tunneling spectra of the quasifreestanding graphene monolayer. Many groups observed "V -shaped" spectra with linearly vanishing density of states at the Dirac point, whereas others reported spectra with a gap of ±60 meV pinned to the Fermi level in the quasifreestanding graphene monolayer. Here, we systematically study the two contradicting tunneling spectra of the quasifreestanding graphene monolayer on various substrates in the presence of different magnetic fields and demonstrate that both spectra are the "correct" spectra. However, the V -shaped spectrum exhibits only the contribution of the low-energy Dirac fermions, whereas the gapped spectrum is contributed by both the low-energy Dirac fermions and the high-energy nearly free-electron states due to the existence of the inelastic tunneling process. Our results indicate that interaction with substrates plays a vital role in affecting the spectra of graphene. We also show that it is possible to switch the tunneling spectra between the two distinct features at the nanoscale through voltage pulses applied to the STM tip.

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor); Leduc, Henry G. (Inventor)

1992-01-01

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Growth of different V2O5 nanostructures as a function of deposition duration

NASA Astrophysics Data System (ADS)

Saini, Sujit K.; Sharma, Rabindar K.; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

2018-05-01

Vanadium pentoxide nanostructured thin films are synthesized using plasma assisted sublimation process (PASP). The effect of deposition duration on the growth of V2O5 nanostructured thin films (NSTs) is studied in present paper. Raman and XRD results depict that all films exhibited only orthorhombic crystalline phase of vanadium oxide (i.e. V2O5). As duration increases the growth of V2O5 nanostructures preferentially aligned along (101) crystallographic plane. Scanning electron micrographs show that different morphologies are obtained with different duration of deposition. For low durations (i.e. 30 and 40 min.) the 1D nanostructures with random alignments are obtained, whereas for prolonged durations of deposition (50 and 60 min) the embedded nanopillers having vertical alignments with uniform distribution on entire substrate are found. The occurrence of remarkable increase in visible radiation from 8% to 13% on increasing duration again implies that the crystallinity and alignments of V2O5 nanostructures is getting improved with duration.

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akushichi, T., E-mail: taiju.aku7@isl.titech.ac.jp; Shuto, Y.; Sugahara, S., E-mail: sugahara@isl.titech.ac.jp

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accuratelymore » fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.« less

Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

NASA Astrophysics Data System (ADS)

Sylvia, Somaia Sarwat

The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling current because of their small direct bandgap. Our simulation results show that although they require highly degenerate source doping to support the high electric fields in the tunnel region, the devices achieve minimum inverse subthreshold slopes of 30 mV/dec. In subthreshold, these devices experience both regimes of voltage-controlled tunneling and cold-carrier injection. Numerical results based on a discretized 8-band k.p model are compared to analytical WKB theory. For both regular FETs and TFETs, direct channel tunneling dominates the leakage current when the physical gate length is reduced to 5 nm. Therefore, a survey of materials is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The tunneling effective mass gives the best indication of the relative size of the tunnel currents. Si gives the lowest overall tunnel current for both the conduction and valence band and, therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. Our numerical simulation shows that the finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire (NW) TFET affect both the mean value and the variance of the drive current and the inverse subthreshold slope. The discrete doping model gives an average drive current and an inverse subthreshold slope that are less than those predicted from the homogeneous doping model. The doping density required to achieve a target drive current is

Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane

NASA Astrophysics Data System (ADS)

Yoshimura, Satoru; Sugimoto, Satoshi; Takeuchi, Takae; Murai, Kensuke; Kiuchi, Masato

2018-04-01

We mass-selected SiC3H9+ ions from various fragments produced through the decomposition of hexamethyldisilane, and finally produced low-energy SiC3H9+ ion beams. The ion beams were injected into Si(1 0 0) substrates and the dependence of deposited films on injected ion energy was then investigated. Injected ion energies were 20, 100, or 200 eV. Films obtained were investigated with X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. X-ray diffraction and X-ray photoelectron spectroscopy of the substrates obtained following the injection of 20 eV ions demonstrated the occurrence of silicon carbide film (3C-SiC) deposition. On the other hand, Raman spectroscopy showed that the films deposited by the injection of 100 or 200 eV ions included 3C-SiC plus diamond-like carbon. Ion beam deposition using hexamethyldisilane-derived 20 eV SiC3H9+ ions is an efficient technique for 3C-SiC film formation on Si substrates.

Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions.

PubMed

Zhang, Peng

2015-05-19

When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics.

Effect of Annealing Temperature on Flowerlike Cu3BiS3 Thin Films Grown by Chemical Bath Deposition

NASA Astrophysics Data System (ADS)

Deshmukh, S. G.; Patel, S. J.; Patel, K. K.; Panchal, A. K.; Kheraj, Vipul

2017-10-01

For widespread application of thin-film photovoltaic solar cells, synthesis of inexpensive absorber material is essential. In this work, deposition of ternary Cu3BiS3 absorber material, which contains abundant and environmentally benign elements, was carried out on glass substrate. Flowerlike Cu3BiS3 thin films with nanoflakes as building block were formed on glass substrate by chemical bath deposition. These films were annealed at 573 K and 673 K in sulfur ambient for structural improvement. Their structure was characterized using Raman spectroscopy, as well as their surface morphological and optical properties. The x-ray diffraction profile of as-deposited Cu3BiS3 thin film revealed amorphous structure, which transformed to orthorhombic phase after annealing. The Raman spectrum exhibited a characteristic peak at 290 cm-1. Scanning electron microscopy of as-deposited Cu3BiS3 film confirmed formation of nanoflowers with diameter of around 1052 nm. Wettability testing of as-deposited Cu3BiS3 thin film demonstrated hydrophobic nature, which became hydrophilic after annealing. The measured ultraviolet-visible (UV-Vis) absorption spectra of the Cu3BiS3 thin films gave an absorption coefficient of 105 cm-1 and direct optical bandgap of about 1.42 eV after annealing treatment. Based on all these results, such Cu3BiS3 material may have potential applications in the photovoltaic field as an absorber layer.

Pinhole mediated electrical transport across LaTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide hetero-structures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Toutam, Vijaykumar

2013-11-01

Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

Effect of deposition parameters and heat-treatment on the microstructure, mechanical and electrochemical properties of hydroxyapatite/titanium coating deposited on Ti6Al4V by RF-magnetron sputtering

NASA Astrophysics Data System (ADS)

Qi, Jianwei; Chen, Zhangbo; Han, Wenjun; He, Danfeng; Yang, Yiming; Wang, Qingliang

2017-09-01

Functionally graded HA/Ti coatings were deposited on silicon and Ti6Al4V substrate by radio-frequency (RF) magnetron sputtering. The effect of RF-power, negative bias and heat-treatment on the microstructure, mechanical and electrochemical properties of the coatings were characterized by SEM, XRD, FTIR, AFM Nanoindentation and electrochemical workstation. The obtained results showed that the as-deposited HA/Ti coatings were characteristic of amorphous structure, which transformed into a crystal structure after heat-treatment, and reformed O-H peak. The content of crystallization was increasing with the increase of negative bias. A dense, homogenous, smooth and featured surface, and columnar cross-section structure was observed in SEM observation. AFM results showed that the surface roughness became higher after heat-treatment, and increased with increasing RF-power. The mechanical test indicated that the coating had a higher nanohardness (9.1 GPa) in the case of  -100 V and 250 W than that of Ti6Al4V substrate, and a critical load as high as 17  ±  3.5 N. The electrochemical test confirmed the HA/Ti coating served as a stable protecting barrier in improving the corrosion resistance, which the corrosion current density was 1.3% of Ti6Al4V, but it was significantly influenced by RF-power and negative bias. The contact angle test demonstrated that all the coatings exhibited favorable hydrophilic properties, and it decreased by 20-25% compared to that untreated samples. Thus all results indicated that magnetron sputtering is a promising way for fabricating a better biocompatible ceramic coating by adjusting deposition parameters and post-deposition heat treatments.

Calculation of Dose Deposition in 3D Voxels by Heavy Ions

NASA Technical Reports Server (NTRS)

Plante, Ianik; Cucinotta, Francis A.

2010-01-01

The biological response to high-LET radiation is very different from low-LET radiation, and can be partly attributed to the energy deposition by the radiation. Several experiments, notably detection of gamma-H2AX foci by immunofluorescence, has revealed important differences in the nature and in the spatial distribution of double-strand breaks (DSB) induced by low- and high-LET radiations. Many calculations, most of which are based on amorphous track models with radial dose, have been combined with chromosome models to calculate the number and distribution of DSB within nuclei and chromosome aberrations. In this work, the Monte-Carlo track structure simulation code RITRACKS have been used to calculate directly the energy deposition in voxels (3D pixels). A cubic volume of 5 micrometers of side was irradiated by 1) 450 (1)H+ ions of 300 MeV (LET is approximately 0.3 keV/micrometer) and 2) by 1 (56)Fe26+ ion of 1 GeV/amu (LET is approximately 150 keV/micrometer). In both cases, the dose deposited in the volume is approximately 1 Gy. All energy deposition events are recorded and dose is calculated in voxels of 20 micrometers of side. The voxels are then visualized in 3D by using a color scale to represent the intensity of the dose in a voxel. This simple approach has revealed several important points which may help understand experimental observations. In both simulations, voxels which receive low dose are the most numerous, and those corresponding to electron track ends received a dose which is in the higher range. The dose voxels are distributed randomly and scattered uniformly within the volume irradiated by low-LET radiation. The distribution of the voxels shows major differences for the (56)Fe26+ ion. The track structure can still be seen, and voxels with much higher dose are found in the region corresponding to the track "core". These high-dose voxels are not found in the low-LET irradiation simulation and may be responsible for DSB that are more difficult to

Propulsion and airframe aerodynamic interactions of supersonic V/STOL configurations. Volume 1: Wind tunnel test pressure data report

NASA Technical Reports Server (NTRS)

Zilz, D. E.; Devereaux, P. A.

1985-01-01

A wind tunnel model of a supersonic V/STOL fighter configuration has been tested to measure the aerodynamic interaction effects which can result from geometrically close-coupled propulsion system/airframe components. The approach was to configure the model to represent two different test techniques. One was a conventional test technique composed of two test modes. In the Flow-Through mode, absolute configuration aerodynamics are measured, including inlet/airframe interactions. In the Jet-Effects mode, incremental nozzle/airframe interactions are measured. The other test technique is a propulsion simulator approach, where a sub-scale, externally powered engine is mounted in the model. This allows proper measurement of inlet/airframe and nozzle/airframe interactions simultaneously. This is Volume 1 of 2: Wind Tunnel Test Pressure Data Report.

Tunneling Evidence of Half-Metallic Ferromagnetism in La(0.7)Ca(0.3)MnO(3)

NASA Technical Reports Server (NTRS)

Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

1997-01-01

Direct experimental evidence of half-metallic density of states (DOS) is observed by scanning tunneling spectroscopy on ferromagnetic La(0.7)Ca(0.3)MnO(3) which exhibits colossal magnetoresistance (SMR).

A Complete Reporting of MCNP6 Validation Results for Electron Energy Deposition in Single-Layer Extended Media for Source Energies <= 1-MeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dixon, David A.; Hughes, Henry Grady

In this paper, we expand on previous validation work by Dixon and Hughes. That is, we present a more complete suite of validation results with respect to to the well-known Lockwood energy deposition experiment. Lockwood et al. measured energy deposition in materials including beryllium, carbon, aluminum, iron, copper, molybdenum, tantalum, and uranium, for both single- and multi-layer 1-D geometries. Source configurations included mono-energetic, mono-directional electron beams with energies of 0.05-MeV, 0.1-MeV, 0.3- MeV, 0.5-MeV, and 1-MeV, in both normal and off-normal angles of incidence. These experiments are particularly valuable for validating electron transport codes, because they are closely represented bymore » simulating pencil beams incident on 1-D semi-infinite slabs with and without material interfaces. Herein, we include total energy deposition and energy deposition profiles for the single-layer experiments reported by Lockwood et al. (a more complete multi-layer validation will follow in another report).« less

PREFACE: Time-resolved scanning tunnelling microscopy Time-resolved scanning tunnelling microscopy

NASA Astrophysics Data System (ADS)

Zandvliet, Harold J. W.; Lin, Nian

2010-07-01

out the potential landscape of the system (often a molecule or an atom) under study [4, 5]. However, the dynamical processes might also be induced by the tunnelling process itself [6, 7]. In the field of molecular science, excited single molecule experiments have been especially performed [8]. As a nice example, we refer to the work of Sykes' group [9] on thioether molecular rotors. In addition, several groups explore the possibility of combining time-resolved scanning tunnelling microscopy with optical techniques [10, 11]. Although the majority of studies that have been performed so far focus on rather simple systems under nearly ideal and well-defined conditions, we anticipate that time-resolved scanning tunnelling microscopy can also be applied in other research areas, such as biology and soft condensed matter, where the experimental conditions are often less ideal. We hope that readers will enjoy this collection of papers and that it will trigger them to further explore the possibilities of this simple, but powerful technique. References [1] Besenbacher F, Laegsgaard E and Stengaard I 2005 Mater. Today 8 26 [2] van Houselt A and Zandvliet H J W 2010 Rev. Mod. Phys. 82 1593 [3] Tringides M C and Hupalo M 2010 J. Phys.: Condens. Matter 22 264002 [4] Ronci F, Colonna S, Cricenti A and Le Lay G 2010 J. Phys.: Condens. Matter 22 264003 [5] van Houselt A, Poelsema B and Zandvliet H J W 2010 J. Phys.: Condens. Matter 22 264004 [6] Sprodowski C, Mehlhorn M and Morgenstern K 2010 J. Phys.: Condens. Matter 22 264005 [7] Saedi A, Poelsema B and Zandvliet H J W 2010 J. Phys.: Condens. Matter 22 264007 [8] Sloan P A 2010 J. Phys.: Condens. Matter 22 264001 [9] Jewell A D, Tierney H L, Baber A E, Iski E V, Laha M M and Sykes E C H 2010 J. Phys.: Condens. Matter 22 264006 [10] Riedel D 2010 J. Phys.: Condens. Matter 22 264009 [11] Terada Y, Yoshida S, Takeuchi O and Shigekawa H 2010 J. Phys.: Condens. Matter 22 264008

Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com; Panchal, A.K.

2016-05-06

First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the ordermore » of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.« less

Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

DTIC Science & Technology

2016-03-30

have recently implemented Josephson junction superconducting devices into qubits [1-6]. Before a multi -qubit quantum computer is realized, however...Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier* S Oh1,2, K Cicak1, R McDermott3, K B Cooper3, K D Osborn1, R W...growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are

Lead-free piezoelectrics: V3+ to V5+ ion conversion promoting the performances of V-doped Zinc Oxide.

PubMed

Laurenti, M; Castellino, M; Perrone, D; Asvarov, A; Canavese, G; Chiolerio, A

2017-02-06

Vanadium doped ZnO (VZO) thin films were grown by RF magnetron sputtering, starting from a ZnO:V ceramic target. The crystal structure, chemical composition, electric and piezoelectric properties of the films were investigated either on the as-grown thin films or after a post-deposition rapid thermal annealing (RTA) treatment performed at 600 °C for different lengths of time (1 and 5 min) in an oxygen atmosphere. Substitutional doping of Zn 2+ with V 3+ and V 5+ ions strongly deteriorated the hexagonal wurtzite ZnO structure of the as-grown thin films due to lattice distortion. The resulting slight amorphization led to a poor piezoelectric response and higher resistivity. After the RTA treatment, strong c-axis oriented VZO thin films were obtained, together with a partial conversion of the starting V 3+ ions into V 5+ . The improvement of the crystal structure and the stronger polarity of both V 3+ - O and V 5+ - O chemical bonds, together with the corresponding easier rotation under the application of an external electric field, positively affected the piezoelectric response and increased conductivity. This was confirmed by closed-loop butterfly piezoelectric curves, by a maximum d 33 piezoelectric coefficient of 85 pm·V -1 , and also by ferroelectric switching domains with a well-defined polarization hysteresis curve, featuring a residual polarization of 12.5 μC∙cm -2 .

120 MeV Ag ion induced effects in Au/HfO2/Si MOSCAPs

NASA Astrophysics Data System (ADS)

Manikanthababu, N.; Prajna, K.; Pathak, A. P.; Rao, S. V. S. Nageswara

2018-05-01

HfO2/Si thinfilms were deposited by RF sputtering technique. 120 MeV Ag ion irradiation has been used to study the electrical properties of Au/HfO2/Si MOSCAPs. SHI (120 MeV Ag) induced annealing, defects creation and intermixing effects on the electrical properties of these systems have been studied. Here, we have observed that the high electronic excitation can cause a significant reduction of leakage currents in these MOSCAP devices. Various quantum mechanical tunneling phenomenon has been observed from the I-V characteristics.

3. FLAME DEFLECTOR AT CENTER, CONNECTING TUNNEL AT CENTER RIGHT, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. FLAME DEFLECTOR AT CENTER, CONNECTING TUNNEL AT CENTER RIGHT, VIEW TOWARDS SOUTHWEST. - Glenn L. Martin Company, Titan Missile Test Facilities, Captive Test Stand D-1, Waterton Canyon Road & Colorado Highway 121, Lakewood, Jefferson County, CO

Conceptual design for an electron-beam heated hypersonic wind tunnel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lipinski, R.J.; Kensek, R.P.

1997-07-01

There is a need for hypersonic wind-tunnel testing at about mach 10 and above using natural air and simulating temperatures and pressures which are prototypic of flight at 50 km altitude or below. With traditional wind-tunnel techniques, gas cooling during expansion results in exit temperatures which are too low. Miles, et al., have proposed overcoming this difficulty by heating the air with a laser beam as it expands in the wind-tunnel nozzle. This report discusses an alternative option of using a high-power electron beam to heat the air as it expands. In the e-beam heating concept, the electron beam ismore » injected into the wind-tunnel nozzle near the exit and then is guided upstream toward the nozzle throat by a strong axial magnetic field. The beam deposits most of its power in the dense air near the throat where the expansion rate is greatest. A conceptual design is presented for a large-scale system which achieves Mach 14 for 0.1 seconds with an exit diameter of 2.8 meters. It requires 450 MW of electron beam power (5 MeV at 90 A). The guiding field is 500 G for most of the transport length and increases to 100 kG near the throat to converge the beam to a 1.0-cm diameter. The beam generator is a DC accelerator using a Marx bank (of capacitors) and a diode stack with a hot cathode. 14 refs. 38 figs., 9 tabs.« less

Emission factors of volatile organic compounds (VOCs) based on the detailed vehicle classification in a tunnel study.

PubMed

Zhang, Qijun; Wu, Lin; Fang, Xiaozhen; Liu, Mingyue; Zhang, Jing; Shao, Min; Lu, Sihua; Mao, Hongjun

2018-05-15

In order to obtain VOCs emission characteristics and emission factors from vehicle, a tunnel experiment was conducted in the Fu Gui Mountain Tunnel in Nanjing, China. The tunnel is located in the middle of city, with total length of 480m and speed limit of 50km/h. The studied vehicle fleet was composed of 87% light duty vehicles and 13% heavy duty vehicles (liquefied natural gas bus, LNGB). The emerging radio frequency identification (RFID) technology was used to divide fine vehicles type including China I, China II, China III, China IV, China V and LNGB. Ambient air samples (4-h averages) were collected inside the tunnel using 3.2L stainless-steel canisters. Samples collected in the canisters were analyzed for 97 individual VOCs using high-resolution GC-MS in the laboratory. The average tunnel emission factor for the collective light-duty vehicles was 160.79±65.94mg/(km∗veh), and for the China I, China II, China III, China IV and China V vehicles, it was 632.07±259.44, 450.35±184.85, 205.42±84.32, 118.51±48.65, and 110.61±45.4mg/(km∗veh), respectively. The average emission factor for heavy-duty vehicles was 358.02±124.86mg/(km∗veh). Ethane, isopentane, propane, ethylene, toluene, propylene and 2,3-dimethylbutane were the most common VOC species in vehicle emissions. The total O 3 formation potential was 373.88mg∗O 3 /(km∗veh) in the tunnel. Ethylene, propylene, m/p-xylene, toluene, and isopentane were the largest contributors to O 3 production. Compared with previous studies, fuel quality increased from China II-FQ to China IV-FQ levels, while the BTEX emission levels exhibited a decreasing trend. Copyright © 2017 Elsevier B.V. All rights reserved.

CsPbBr 3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition

DOE PAGES

Hoffman, Jacob B.; Zaiats, Gary; Wappes, Isaac; ...

2017-10-25

All inorganic cesium lead bromide (CsPbBr 3) perovskite is a more stable alternative to methylammonium lead bromide (MAPbBr 3) for designing high open-circuit voltage solar cells and display devices. Poor solubility of CsBr in organic solvents makes typical solution deposition methods difficult to adapt for constructing CsPbBr 3 devices. Our layer-by-layer methodology, which makes use of CsPbBr 3 quantum dot (QD) deposition followed by annealing, provides a convenient way to cast stable films of desired thickness. The transformation from QDs into bulk during thermal annealing arises from the resumption of nanoparticle growth and not from sintering as generally assumed. Additionally,more » a large loss of organic material during the annealing process is mainly from 1-octadecene left during the QD synthesis. Utilizing this deposition approach for perovskite photovoltaics is examined using typical planar architecture devices. Devices optimized to both QD spin-casting concentration and overall CsPbBr 3 thickness produce champion devices that reach power conversion efficiencies of 5.5% with a V oc value of 1.4 V. Finally, the layered QD deposition demonstrates a controlled perovskite film architecture for developing efficient, high open-circuit photovoltaic devices.« less

CsPbBr 3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoffman, Jacob B.; Zaiats, Gary; Wappes, Isaac

All inorganic cesium lead bromide (CsPbBr 3) perovskite is a more stable alternative to methylammonium lead bromide (MAPbBr 3) for designing high open-circuit voltage solar cells and display devices. Poor solubility of CsBr in organic solvents makes typical solution deposition methods difficult to adapt for constructing CsPbBr 3 devices. Our layer-by-layer methodology, which makes use of CsPbBr 3 quantum dot (QD) deposition followed by annealing, provides a convenient way to cast stable films of desired thickness. The transformation from QDs into bulk during thermal annealing arises from the resumption of nanoparticle growth and not from sintering as generally assumed. Additionally,more » a large loss of organic material during the annealing process is mainly from 1-octadecene left during the QD synthesis. Utilizing this deposition approach for perovskite photovoltaics is examined using typical planar architecture devices. Devices optimized to both QD spin-casting concentration and overall CsPbBr 3 thickness produce champion devices that reach power conversion efficiencies of 5.5% with a V oc value of 1.4 V. Finally, the layered QD deposition demonstrates a controlled perovskite film architecture for developing efficient, high open-circuit photovoltaic devices.« less

La2/3Sr1/3MnO3-La0.1Bi0.9MnO3 heterostructures for spin filtering

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Varela, M.; Fontcuberta, J.; Herranz, G.; Fusil, S.; Bouzehouane, K.; Barthélémy, A.; Fert, A.

2006-04-01

We have grown heterostructures associating half-metallic La2/3Sr1/3MnO3 (LSMO) bottom electrodes and ferromagnetic La0.1Bi0.9MnO3 (LBMO) tunnel barriers. The layers in the heterostructures have good structural properties and top LBMO films (4 nm thick) have a very low roughness when deposited onto LSMO/SrTiO3(1.6 nm) templates. The LBMO films show an insulating behavior and a ferromagnetic character that are both preserved down to very low thicknesses. They are thus suitable for being used as tunnel barriers. Spin-dependent transport measurements performed on tunnel junctions defined from LSMO/SrTiO3/LBMO/Au samples show a magnetoresistance of up to ~90% at low temperature and bias. This evidences a spin-filtering effect by the LBMO layer, with a spin-filtering efficiency of ~35%.

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

2014-07-01

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

The NASA Langley Research Center 0.3-meter transonic cryogenic tunnel T-P/Re-M controller manual

NASA Technical Reports Server (NTRS)

Balakrishna, S.; Kilgore, W. Allen

1989-01-01

A new microcomputer based controller for the 0.3-m Transonic Cryogenic Tunnel (TCT) has been commissioned in 1988 and has reliably operated for more than a year. The tunnel stagnation pressure, gas stagnation temperature, tunnel wall structural temperature and flow Mach number are precisely controlled by the new controller in a stable manner. The tunnel control hardware, software, and the flow chart to assist in calibration of the sensors, actuators, and the controller real time functions are described. The software installation details are also presented. The report serves as the maintenance and trouble shooting manual for the 0.3-m TCT controller.

Lead-free piezoelectrics: V3+ to V5+ ion conversion promoting the performances of V-doped Zinc Oxide

PubMed Central

Laurenti, M.; Castellino, M.; Perrone, D.; Asvarov, A.; Canavese, G.; Chiolerio, A.

2017-01-01

Vanadium doped ZnO (VZO) thin films were grown by RF magnetron sputtering, starting from a ZnO:V ceramic target. The crystal structure, chemical composition, electric and piezoelectric properties of the films were investigated either on the as-grown thin films or after a post-deposition rapid thermal annealing (RTA) treatment performed at 600 °C for different lengths of time (1 and 5 min) in an oxygen atmosphere. Substitutional doping of Zn2+ with V3+ and V5+ ions strongly deteriorated the hexagonal wurtzite ZnO structure of the as-grown thin films due to lattice distortion. The resulting slight amorphization led to a poor piezoelectric response and higher resistivity. After the RTA treatment, strong c-axis oriented VZO thin films were obtained, together with a partial conversion of the starting V3+ ions into V5+. The improvement of the crystal structure and the stronger polarity of both V3+ – O and V5+ – O chemical bonds, together with the corresponding easier rotation under the application of an external electric field, positively affected the piezoelectric response and increased conductivity. This was confirmed by closed-loop butterfly piezoelectric curves, by a maximum d33 piezoelectric coefficient of 85 pm·V−1, and also by ferroelectric switching domains with a well-defined polarization hysteresis curve, featuring a residual polarization of 12.5 μC∙cm−2. PMID:28165040

Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions

PubMed Central

Zhang, Peng

2015-01-01

When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons’ formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics. PMID:25988951

Evanescent Modes and Tunnelling Instantaneously Act at a Distance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nimtz, Guenter; Stahlhofen, Alfons A.

Photonic tunnelling experiments have shown that i) the Einstein energy relation is violated, ii) the tunnelling process is non-local, iii) the signal velocity is faster than light, i.e. superluminal, iv) the tunnelling signal is not observable, since photonic tunnelling is described by virtual photons, and v) according to the experimental results the signal velocity is infinite inside the barriers, implying that tunnelling instantaneously acts at a distance. We think these properties are not compatible with the claims of many text books on Special Relativity.

Method for rubblizing an oil shale deposit for in situ retorting

DOEpatents

Lewis, Arthur E.

1977-01-01

A method for rubblizing an oil shale deposit that has been formed in alternate horizontal layers of rich and lean shale, including the steps of driving a horizontal tunnel along the lower edge of a rich shale layer of the deposit, sublevel caving by fan drilling and blasting of both rich and lean overlying shale layers at the distal end of the tunnel to rubblize the layers, removing a substantial amount of the accessible rubblized rich shale to permit the overlying rubblized lean shale to drop to tunnel floor level to form a column of lean shale, performing additional sublevel caving of rich and lean shale towards the proximate end of the tunnel, removal of a substantial amount of the additionally rubblized rich shale to allow the overlying rubblized lean shale to drop to tunnel floor level to form another column of rubblized lean shale, similarly performing additional steps of sublevel caving and removal of rich rubble to form additional columns of lean shale rubble in the rich shale rubble in the tunnel, and driving additional horizontal tunnels in the deposit and similarly rubblizing the overlying layers of rich and lean shale and forming columns of rubblized lean shale in the rich, thereby forming an in situ oil shale retort having zones of lean shale that remain permeable to hot retorting fluids in the presence of high rubble pile pressures and high retorting temperatures.

Laser velocimetry technique applied to the Langley 0.3 meter transonic cryogenic tunnel

NASA Technical Reports Server (NTRS)

Gartrell, L. R.; Gooderum, P. B.; Hunter, W. W., Jr.; Meyers, J. F.

1981-01-01

A low power laser velocimeter operating in the forward scatter mode was used to measure free stream mean velocities in the Langley 0.3 Meter Transonic Cryogenic Tunnel. Velocity ranging from 51 to 235 m/s was measured. Measurements were obtained for a variety of nominal tunnel conditions: Mach numbers from 0.20 to 0.77, total temperatures from 100 to 250 K, and pressures from 101 to 152 kPa. Particles were not injected to augment the existing Mie scattering materials. Liquid nitrogen droplets were the existing liqht scattering material. Tunnel vibrations and thermal effects had no detrimental effects on the optical system.

The NASA Langley Research Center 0.3-meter transonic cryogenic tunnel microcomputer controller source code

NASA Technical Reports Server (NTRS)

Kilgore, W. Allen; Balakrishna, S.

1991-01-01

The 0.3 m Transonic Cryogenic Tunnel (TCT) microcomputer based controller has been operating for several thousand hours in a safe and efficient manner. A complete listing is provided of the source codes for the tunnel controller and tunnel simulator. Included also is a listing of all the variables used in these programs. Several changes made to the controller are described. These changes are to improve the controller ease of use and safety.

Extreme sub-threshold swing in tunnelling relays

NASA Astrophysics Data System (ADS)

AbdelGhany, M.; Szkopek, T.

2014-01-01

We propose and analyze the theory of the tunnelling relay, a nanoscale active device in which tunnelling current is modulated by electromechanical actuation of a suspended membrane above a fixed electrode. The tunnelling current is modulated exponentially with vacuum gap length, permitting an extreme sub-threshold swing of ˜10 mV/decade breaking the thermionic limit. The predicted performance suggests that a significant reduction in dynamic energy consumption over conventional field effect transistors is physically achievable.

3. CONNECTING TUNNEL AT BOTTOM CENTER TO CENTER, CONTROL BUILDING ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. CONNECTING TUNNEL AT BOTTOM CENTER TO CENTER, CONTROL BUILDING B AT CENTER, WATER TANK TO UPPER LEFT, VIEW TOWARDS WEST. - Glenn L. Martin Company, Titan Missile Test Facilities, Control Building B, Waterton Canyon Road & Colorado Highway 121, Lakewood, Jefferson County, CO

An ancient underground water tunnel as a proxy for environmental change

NASA Astrophysics Data System (ADS)

Sabri, Raghid; Merkel, Broder

2014-05-01

Carbonate samples taken from a Roman water tunnel in Nablus, Palestine, were investigated with respect to geochemistry and mineralogy. This tunnel runs under the Roman Cardo of Neapolis and dates back to the 2nd century. Carbonate deposits samples were taken from the sidewall of the tunnel. Thin sections of the deposits were made along the growth axis and were analyzed using optical microscope and scanning electron microscope (SEM) and showed alternated lamination with dark and light zones. The microstructures of the deposits show a range of change of crystal formation change. It is also obvious that at one layer the crystals are pure with columnar fabric while the next layer has many impurities with mosaic fabric. This means, that the columnar layer had a sufficient time to grow, where the mosaic layer had only limited time. On the other hand, thirty seven points in the carbonate deposits around 40mm along the growth axis were measured using SEM. The measurement showed that C, Ca and O value fluctuates between each two measurement points. Si, Cl and Mg values also fluctuate but with reduced intensity and unpredicted pattern. The high fluctuation can be referred to seasonal change of the water quantity and quality. On the other hand, the low fluctuation values are referred to extreme events.

On the Feasibility of a Pulsed 14 TeV C.M.E. Muon Collider in the LHC Tunnel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiltsev, Vladimir; Neuffer, D.

We discuss the technical feasibility, key machine pa-rameters and major challenges of a 14 TeV c.m.e. muon-muon collider in the LHC tunnel [1]. The luminosity of the collider is evaluated for three alternative muon sources – the PS synchrotron, one of a type developed by the US Muon Accelerator Program (MAP) and a low-emittance option based on resonant μ-pair production.

RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

NASA Astrophysics Data System (ADS)

Chopade, S. S.; Barve, S. A.; Thulasi Raman, K. H.; Chand, N.; Deo, M. N.; Biswas, A.; Rai, Sanjay; Lodha, G. S.; Rao, G. M.; Patil, D. S.

2013-11-01

Yttrium oxide (Y2O3) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 °C. The films have been deposited under influence of varying RF self-bias (-50 V to -175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2O3 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y2O3. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y2O3 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y2O3 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness.

XPS studies of MgO based magnetic tunnel junction structures

NASA Astrophysics Data System (ADS)

Read, John; Mather, Phil; Tan, Eileen; Buhrman, Robert

2006-03-01

The very high tunneling magnetoresistance (TMR) obtained in MgO magnetic tunnel junctions (MTJ)^(1,2) motivates the investigation of the electronic properties of the MgO barrier layer and the study of the ferromagnetic metal - MgO interface chemistry. Such large TMR values are predicted by theory due to the high degree of order apparent in the barrier and electrode materials. However, as grown ultra-thin MgO films generally contain defects that can influence electron transport properties through the creation of low energy states within the bulk MgO band-gap. We will report the results of x-ray photoelectron spectroscopy (XPS) studies of (001) textured ultra-thin MgO layers that are prepared by RF magnetron sputtering and electron beam evaporation on ordered ferromagnetic electrodes and in ordered MTJ structures with and without post growth vacuum annealing. XPS spectra for both MgO deposition techniques clearly indicate a surface oxygen species that is likely bound by defects in the oxide^(3) in half-formed junctions and improvements in MgO quality after counter electrode deposition. We will discuss our results regarding the chemical properties of the oxide and its interfaces directed towards possibly providing guidance to engineer improved MgO MTJ devices. [1] S.S.P. Parkin et. al., Nature Materials, 3, 862 (2004). [2] S. Yuasa et. al., Nature Materials, 3, 868 (2004). [3] E. Tan et. al. , Phys. Rev. B. , 71, 161401 (2005).

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-05-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

PubMed Central

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-01-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories. PMID:28513590

Octonary resistance states in La 0.7Sr 0.3MnO 3/BaTiO 3/La 0.7Sr 0.3MnO 3 multiferroic tunnel junctions

DOE PAGES

Yue -Wei Yin; Tao, Jing; Huang, Wei -Chuan; ...

2015-10-06

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La 0.7Sr 0.3MnO 3/BaTiO 3/La 0.7Sr 0.3MnO 3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ showsmore » at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO 3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.« less

Harmonic multiplication using resonant tunneling

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. G.; Brown, E. R.; Goodhue, W. D.; Correa, C. A.

1988-01-01

This paper demonstrates the use of resonant-tunneling diodes as varistors for harmonic multiplication. It is shown that efficient odd-harmonic conversion is possible and that even harmonics do not appear because of the antisymmetry of the current-voltage (I-V) curve. It is also shown that, with the proper choice of resonant-tunneling structure and pump amplitude, most of the harmonic output power can be confined to a single odd-harmonic frequency. Fifth-harmonic multiplication was demonstrated with an output at 21.75 GHz and a power conversion efficiency of 0.5 percent, and a fifth-harmonic efficiency of 2.7 percent was achieved in a circuit simulation using an improved I-V curve.

Point-contact electron tunneling into the high-Tc superconductor Y-Ba-Cu-O

NASA Astrophysics Data System (ADS)

Kirk, M. D.; Smith, D. P. E.; Mitzi, D. B.; Sun, J. Z.; Webb, D. J.

1987-06-01

Results are reported from a study of electron tunneling into bulk samples of the new high-Tc superconductor Y-Ba-Cu-O using point-contact tunneling. Based on a superconductive tunneling interpretation, the results show exceptionally large energy gaps in these materials (roughly 2Delta = 100 MeV), implying 2Delta/kBTc = about 13. Similar values were found for La-Sr-Cu-O. The structure in the I-V curves is also similar to that seen in La-Sr-Cu-O. From the asymmetries observed in the I-V characteristics, it is inferred that the natural tunneling barrier on this material is of the Schottky type.

Deposition and characterization of stoichiometric films of V2O5 on Pd(111)

NASA Astrophysics Data System (ADS)

Feng, Xu; Abdel-Rahman, Mohammed K.; Kruppe, Christopher M.; Trenary, Michael

2017-10-01

A simple and efficient method has been used to grow V2O5 thin films on Pd(111) at a substrate temperature of 300 K through physical vapor deposition by heating a fine powder of V2O5 in a non-oxidative, UHV environment. X-ray photoelectron spectroscopy (XPS), reflection absorption infrared spectroscopy (RAIRS) and low energy electron diffraction (LEED) were used to characterize the thin films. When the as-grown films exceed a minimum thickness, characteristic features of V2O5 were revealed by XPS and RAIRS, which confirms the presence of stoichiometric V2O5. LEED indicates no long range order of the as-grown films at 300 K. Annealing to temperatures between 600 and 700 K causes a reduction of V2O5 to VO2 as identified by XPS and the formation of ordered structures as determined by LEED, and VO2 is predominant after annealing to 800 K. After further annealing to 1000 K, only an ordered form of V2O3 is present on Pd(111).

Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

NASA Astrophysics Data System (ADS)

Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

2016-10-01

The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts

NASA Astrophysics Data System (ADS)

Majumder, Sarmita; Hohertz, Donna; McNeil, James; SpringThorpe, Anthony; Kavanagh, Karen L.

2014-03-01

We report spin transport in electrodeposited Fe/n-GaAs tunnel diodes via three-terminal Hanle measurements. For temperatures between 20 K and 150 K, the spin resistance was up to 20 times higher than expected from theoretical calculations and 1000 times larger compared to a vacuum-deposited counterpart. This higher spin resistance was correlated with a higher contact resistance, and a higher concentration of oxygen impurities in the electrodeposited Fe film and interface, as detected via x-ray photoelectron and Auger spectroscopies, and inferred from Fe film nucleation rates. These results can be explained via a small effective tunnel-contact area of 5%, but extra spin filtering via interfacial states or magnetic oxide layers cannot be ruled out. The spin diffusion times (8.5 ± 0.4 ns to 1.8 ± 0.4 ns, for 20 K to 150 K) extracted from Lorentzian fits were in good agreement with values obtained from earlier 4-terminal Hanle measurements (7.8 ± 0.4 ns to 3.2 ± 0.4 ns, for 25 K to 77 K), both 10 times slower than reported vacuum-deposited contacts.

NIS tunnel junction as an x-ray photon sensor

NASA Astrophysics Data System (ADS)

Azgui, Fatma; Mears, Carl A.; Labov, Simon E.; Frank, Matthias A.; Sadoulet, Bernard; Brunet, E.; Hiller, Lawrence J.; Lindeman, Mark A.; Netel, Harrie

1995-09-01

This work presents the first results of our development of normal-insulating-superconducting tunnel junctions used as energy dispersive detectors for low energy particles. The device described here is a Ag/Al(subscript 2)O(subscript 3)/Al tunnel junction of area 1.5 multiplied by 10(superscript 4) micrometer squared with thicknesses of 200 nm for the normal Ag strip and 100 nm for the superconducting Al film. Two different high-speed SQUID systems manufactured by quantum magnetics and HYPRES, respectively, were used for the readout of this device. At 80 mK bath temperature we obtained an energy resolution DeltaE(subscript FWHM) equals 250 eV for 5.89 keV x rays absorbed directly in the normal metal. This energy resolution appears to be limited in large part by the observed strong position dependence of the device response.

Infrared spectra and tunneling dynamics of the N2-D2O and OC-D2O complexes in the v2 bend region of D2O.

PubMed

Zhu, Yu; Zheng, Rui; Li, Song; Yang, Yu; Duan, Chuanxi

2013-12-07

The rovibrational spectra of the N2-D2O and OC-D2O complexes in the v2 bend region of D2O have been measured in a supersonic slit jet expansion using a rapid-scan tunable diode laser spectrometer. Both a-type and b-type transitions were observed for these two complexes. All transitions are doubled, due to the heavy water tunneling within the complexes. Assuming the tunneling splittings are the same in K(a) = 0 and K(a) = 1, the band origins, all three rotational and several distortion constants of each tunneling state were determined for N2-D2O in the ground and excited vibrational states, and for OC-D2O in the excited vibrational state, respectively. The averaged band origin of OC-D2O is blueshifted by 2.241 cm(-1) from that of the v2 band of the D2O monomer, compared with 1.247 cm(-1) for N2-D2O. The tunneling splitting of N2-D2O in the ground state is 0.16359(28) cm(-1), which is about five times that of OC-D2O. The tunneling splittings decrease by about 26% for N2-D2O and 23% for OC-D2O, respectively, upon excitation of the D2O bending vibration, indicating an increase of the tunneling barrier in the excited vibrational state. The tunneling splittings are found to have a strong dependence on intramolecular vibrational excitation as well as a weak dependence on quantum number K(a).

View of entrance tunnel. Tunnel right to Control Center, left ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of entrance tunnel. Tunnel right to Control Center, left to Antenna Silos - Titan One Missile Complex 2A, .3 miles west of 129 Road and 1.5 miles north of County Line Road, Aurora, Adams County, CO

Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal-Hexagonal Boron Nitride-Graphene Junctions.

PubMed

Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

2016-12-14

Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling conductance, dI/dV, at low voltages is relatively weak, with a strong enhancement reproducibly observed to occur at around |V| ≈ 50 mV. While the weak tunneling at low energies is attributed to the absence of substantial overlap, in momentum space, of the metal and graphene Fermi surfaces, the enhancement at higher energies signals the onset of inelastic processes in which phonons in the heterostructure provide the momentum necessary to link the Fermi surfaces. Pronounced peaks in the second derivative of the tunnel current, d 2 I/dV 2 , are observed at voltages where known phonon modes in the tunnel junction have a high density of states. In addition, features in the tunneling conductance attributed to single electron charging of nanometer-scale defects in the boron nitride are also observed in these devices. The small electronic density of states of graphene allows the charging spectra of these defect states to be electrostatically tuned, leading to "Coulomb diamonds" in the tunneling conductance.

Photoelectrochemical (PEC) studies on Cu2SnS3 (CTS) thin films deposited by chemical bath deposition method.

PubMed

Shelke, H D; Lokhande, A C; Kim, J H; Lokhande, C D

2017-11-15

Cu 2 SnS 3 (CTS) thin films have been successfully deposited on a cost-effective stainless steel substrate by simple and inexpensive chemical bath deposition (CBD) method. The films are deliberated in provisos of their structural, morphological, optical and photoelectrochemical (PEC) properties before and after annealing treatment, using various physico-chemical techniques. The XRD studies showed the formation of triclinic phase of CTS films with nanocrystalline structure. Also, the crystallinity is enhanced with annealing and the secondary phase of Cu 2 S observed. Raman analysis confirmed the formation of CTS compound with secondary Cu 2 S phase. The SEM images also discovered mostly tiny spherical grains and significant progress in the size of grains after annealing. The films possess direct transitions with band gap energies of 1.35eV and 1.31eV before and after annealing, respectively. The improved photoconversion efficiency of CTS thin film based PEC cell is explained with the help of theoretical modeling of energy band diagram and correspondent circuit model of the impedance spectra. Copyright © 2017 Elsevier Inc. All rights reserved.

View of Water Storage Tank off entrance tunnel. Tunnel at ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of Water Storage Tank off entrance tunnel. Tunnel at left of image to Launch Silos - Titan One Missile Complex 2A, .3 miles west of 129 Road and 1.5 miles north of County Line Road, Aurora, Adams County, CO

The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

NASA Technical Reports Server (NTRS)

Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

2010-01-01

The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

A novel electron tunneling infrared detector

NASA Technical Reports Server (NTRS)

Kenny, T. W.; Waltman, S. B.; Reynolds, J. K.; Kaiser, W. J.

1990-01-01

The pneumatic infrared detector, originally developed by Golay in the late 1940s, uses the thermal expansion of one cm(exp 3) of xenon at room temperature to detect the heat deposited by infrared radiation. This detector was limited by thermal fluctuations within a 10 Hz bandwidth, but suffered from long thermal time constants and a fragile structure. Nevertheless, it represents the most sensitive room temperature detector currently available in the long wavelength infrared (LWIR). Fabrication of this type of detector on smaller scales has been limited by the lack of a suitably sensitive transducer. Researchers designed a detector based on this principle, but which is constructed entirely from micromachined silicon, and uses a vacuum tunneling transducer to detect the expansion of the trapped gas. Because this detector is fabricated using micromachining techniques, miniaturization and integration into one and two-dimensional arrays is feasible. The extreme sensitivity of vacuum tunneling to changes in electrode separation will allow a prototype of this detector to operate in the limit of thermal fluctuations over a 10 kHz bandwidth. A calculation of the predicted response and noise of the prototype is presented with the general formalism of thermal detectors. At present, most of the components of the prototype have been fabricated and tested independently. In particular, a characterization of the micromachined electron tunneling transducer has been carried out. The measured noise in the tunnel current is within a decade of the limit imposed by shot noise, and well below the requirements for the operation of an infrared detector with the predicted sensitivity. Assembly and characterization of the prototype infrared detector will be carried out promptly.

Studies on RF sputtered (WO3)1-x (V2O5)x thin films for smart window applications

NASA Astrophysics Data System (ADS)

Meenakshi, M.; Sivakumar, R.; Perumal, P.; Sanjeeviraja, C.

2016-05-01

V2O5 doped WO3 targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO3)1-x (V2O5)x were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important formore » understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.« less

Thermionic emission and tunneling at carbon nanotube-organic semiconductor interface.

PubMed

Sarker, Biddut K; Khondaker, Saiful I

2012-06-26

We study the charge carrier injection mechanism across the carbon nanotube (CNT)-organic semiconductor interface using a densely aligned carbon nanotube array as electrode and pentacene as organic semiconductor. The current density-voltage (J-V) characteristics measured at different temperatures show a transition from a thermal emission mechanism at high temperature (above 200 K) to a tunneling mechanism at low temperature (below 200 K). A barrier height of ∼0.16 eV is calculated from the thermal emission regime, which is much lower compared to the metal/pentacene devices. At low temperatures, the J-V curves exhibit a direct tunneling mechanism at low bias, corresponding to a trapezoidal barrier, while at high bias the mechanism is well described by Fowler-Nordheim tunneling, which corresponds to a triangular barrier. A transition from direct tunneling to Fowler-Nordheim tunneling further signifies a small injection barrier at the CNT/pentacene interface. Our results presented here are the first direct experimental evidence of low charge carrier injection barrier between CNT electrodes and an organic semiconductor and are a significant step forward in realizing the overall goal of using CNT electrodes in organic electronics.

Tuning metal-insulator transitions in epitaxial V2O3 thin films

NASA Astrophysics Data System (ADS)

Thorsteinsson, Einar B.; Shayestehaminzadeh, Seyedmohammad; Arnalds, Unnar B.

2018-04-01

We present a study of the synthesis of epitaxial V2O3 films on c-plane Al2O3 substrates by reactive dc-magnetron sputtering. The results reveal a temperature window, at substantially lower values than previously reported, wherein epitaxial films can be obtained when deposited on [0001] oriented surfaces. The films display a metal-insulator transition with a change in the resistance of up to four orders of magnitude, strongly dependent on the O2 partial pressure during deposition. While the electronic properties of the films show sensitivity to the amount of O2 present during deposition of the films, their crystallographic structure and surface morphology of atomically flat terraced structures with up to micrometer dimensions are maintained. The transition temperature, as well as the scale of the metal-insulator transition, is correlated with the stoichiometry and local strain in the films controllable by the deposition parameters.

Tunneling Spectroscopy of Chemically Treated Surfaces of GaAs(001)

NASA Astrophysics Data System (ADS)

Fan, Jia-Fa; Tokumoto, Hiroshi

1996-03-01

Effect of surface chemical treatment on the surface electronic properties of GaAs(001) was studied by tunneling spectroscopy. Samples of highly-Si-doped GaAs were first cleaned and etched using conventional processes, then soaked in aqueous solutions of (NH_4)_2Sx and/or NH_4F for few hours, and finally rinsed in ethanol. The constant separation spectroscopy was done under pure N2 ambient at room temperature (295K) with our scanning tunneling microscope (STM). As a result, the sulfide treament lead to electron tunnelings starting typically at the sample voltages of -0.50 V and 0.90 V at initial settings of 1.50 V and 0.20 nA. For etched-only surface, however, the starting voltages were -0.70 V and 0.70 V. Effects of heating, laser-irradiation, and the fluoride treatment will be presented. Also, the mechanism of the shift of the surface Fermi level will be discussed.

Electrically insulating films deposited on V-4%Cr-4%Ti by reactive CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, J.H.

1998-04-01

In the design of liquid-metal blankets for magnetic fusion reactors, corrosion resistance of structural materials and the magnetohydrodynamic forces and their influence on thermal hydraulics and corrosion are major concerns. Electrically insulating CaO films deposited on V-4%Cr-4%Ti exhibit high-ohmic insulator behavior even though a small amount of vanadium from the alloy become incorporated into the film. However, when vanadium concentration in the film is > 15 wt.%, the film becomes conductive. When the vanadium concentration is high in localized areas, a calcium vanadate phase that exhibits semiconductor behavior can form. The objective of this study is to evaluate electrically insulatingmore » films that were deposited on V-4%Cr-4%Ti by a reactive chemical vapor deposition (CVD) method. To this end, CaO and Ca-V-O coatings were produced on vanadium alloys by CVD and by a metallic-vapor process to investigate the electrical resistance of the coatings. The authors found that the Ca-V-O films exhibited insulator behavior when the ratio of calcium concentration to vanadium concentration R in the film > 0.9, and semiconductor or conductor behavior when R < 0.8. However, in some cases, semiconductor behavior was observed when CaO-coated samples with R > 0.98 were exposed in liquid lithium. Based on these studies, they conclude that semiconductor behavior occurs if a conductive calcium vanadate phase is present in localized regions in the CaO coating.« less

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

NASA Technical Reports Server (NTRS)

Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

2001-01-01

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

Parameter Calibration and Numerical Analysis of Twin Shallow Tunnels

NASA Astrophysics Data System (ADS)

Paternesi, Alessandra; Schweiger, Helmut F.; Scarpelli, Giuseppe

2017-05-01

Prediction of displacements and lining stresses in underground openings represents a challenging task. The main reason is primarily related to the complexity of this ground-structure interaction problem and secondly to the difficulties in obtaining a reliable geotechnical characterisation of the soil or the rock. In any case, especially when class A predictions fail in forecasting the system behaviour, performing class B or C predictions, which rely on a higher level of knowledge of the surrounding ground, can represent a useful resource for identifying and reducing model deficiencies. The case study presented in this paper deals with the construction works of twin-tube shallow tunnels excavated in a stiff and fine-grained deposit. The work initially focuses on the ground parameter calibration against experimental data, which together with the choice of an appropriate constitutive model plays a major role in the assessment of tunnelling-induced deformations. Since two-dimensional analyses imply initial assumptions to take into account the effect of the 3D excavation, three-dimensional finite element analyses were preferred. Comparisons between monitoring data and results of numerical simulations are provided. The available field data include displacements and deformation measurements regarding both the ground and tunnel lining.

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

NASA Astrophysics Data System (ADS)

Mitrovic, I. Z.; Weerakkody, A. D.; Sedghi, N.; Ralph, J. F.; Hall, S.; Dhanak, V. R.; Luo, Z.; Beeby, S.

2018-01-01

We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device.

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

PubMed

Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

2015-10-01

In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

High Reynolds number tests of the CAST 10-2/DOA 2 airfoil in the Langley 0.3-meter transonic cryogenic tunnel, phase 1

NASA Technical Reports Server (NTRS)

Dress, D. A.; Mcguire, P. D.; Stanewsky, E.; Ray, E. J.

1983-01-01

A wind tunnel investigation of an advanced technology airfoil, the CAST 10-2/DOA 2, was conducted in the Langley 0.3 meter Transonic Cryogenic Tunnel (0.3 m TCT). This was the first of a series of tests conducted in a cooperative National Aeronautics and Space Administration (NASA) and the Deutsche Forschungs- und Versuchsanstalt fur Luft- und Raumfahrt e. V. (DFVLR) airfoil research program. Test temperature was varied from 280 K to 100 K to pressures from slightly above 1 to 5.8 atmospheres. Mach number was varied from 0.60 to 0.80, and the Reynolds number (based on airfoil chord) was varied from 4 x 10 to the 8th power to 45 x 10 to the 6th power. This report presents the experimental aerodynamic data obtained for the airfoil and includes descriptions of the airfoil model, the 0.3 m TCT, the test instrumentation, and the testing procedures.

Dual-Enhanced Photocatalytic Activity of Fe-Deposited Titanate Nanotubes Used for Simultaneous Removal of As(III) and As(V).

PubMed

Liu, Wen; Zhao, Xiao; Borthwick, Alistair G L; Wang, Yanqi; Ni, Jinren

2015-09-09

Fe-deposited titanate nanotubes (Fe-TNTs) with high photocatalytic activity and adsorptive performance were synthesized through a one-step hydrothermal method. Initial As(III) oxidation followed by As(V) adsorption by Fe-TNTs could simultaneously remove these two toxic pollutants from aqueous solutions. The apparent rate constant value for photo-oxidation of As(III) under UV irradiation by Fe-TNTs was almost 250 times that of unmoidified TNTs. Under visible light, the Fe-TNTs also exhibited enhanced photocatalytic activity after Fe was deposited. Fe3+ located in the interlayers of TNTs acted as temporary electron- or hole-trapping sites, and attached α-Fe2O3 played the role of a charge carrier for electrons transferred from TNTs. These two effects inhibited electron-hole pair recombination thus promoting photocatalysis. Moreover, the As(V) adsorptive performance of Fe-TNTs also improved, owing to the presence of additional adsorption sites, α-Fe2O3, as well as increased pHPZC. Furthermore, Fe-TNTs exhibited good photocatalytic and adsorptive performace even after 5 reuse cycles. The present tests, concerning an initial As(III) photocatalysis and subsequent As(V) adsorption process, highlight the feasibility and importance of Fe used to modify TNTs. This study proposes a feasible method to simultaneously remove As(III) and As(V) from contaminated water using a novel Ti-based nanomaterial.

Propulsion and airframe aerodynamic interactions of supersonic V/STOL configurations. Volume 2: Wind tunnel test force and moment data report

NASA Technical Reports Server (NTRS)

Zilz, D. E.

1985-01-01

A wind tunnel model of a supersonic V/STOL fighter configuration has been tested to measure the aerodynamic interaction effects which can result from geometrically close-coupled propulsion system/airframe components. The approach was to configure the model to represent two different test techniques. One was a conventional test technique composed of two test modes. In the Flow-Through mode, absolute configuration aerodynamics are measured, including inlet/airframe interactions. In the Jet-Effects mode, incremental nozzle/airframe interactions are measured. The other test technique is a propulsion simulator approach, where a sub-scale, externally powered engine is mounted in the model. This allows proper measurement of inlet/airframe and nozzle/airframe interactions simultaneously. This is Volume 2 of 2: Wind Tunnel Test Force and Moment Data Report.

13. Groundwater in urban seashore sediments affected by tunnel constructions

NASA Astrophysics Data System (ADS)

Kitterød, Nils-Otto

2014-05-01

The purpose of this study was to examine the impact of a planned tunnel construction on the local groundwater level in the archeological deposits at the Old Wharf (Bryggen) of Bergen. The groundwater level is a function of infiltration rates, transmissivity, and boundary conditions. These variables were deduced from available data and supplemented by leakage measurements into the existing Railway tunnel located upstream of the Bryggen area. Previous studies have documented that the pore water in the deposits at Bryggen has different origin (viz fresh precipitation; leakage from drainage systems; infiltration of seawater; infiltration via the bedrock). The catchment of Bryggen is characterized by variable topography (from sea level to about 500 m a.m.s.l.) and steep gradients. Major parts of the catchment have very sparse sediment cover and can be considered as exposed bedrock. The major sediment volumes are deposited close to the sea front. In the upper part of the catchment, the groundwater level in the bedrock is close to the surface. Some observations indicate that boreholes located in lower part of the catchment have artesian pressure, which implies that there is a groundwater flux from the bedrock and into the sediments. Based on this conceptual model, a numerical model was constructed where the seawater was the boundary condition at one side and the groundwater divide on the other side. Transmissivities in the bedrock were deduced from pumping analysis, and steady state infiltration rates was calibrated to give simulated groundwater levels that were consistent to observations. Given these model simplifications, it was possible to calculate a groundwater level in the sediments at Bryggen were all water into the sediments came from the bedrock only. The simulated groundwater level captured roughly the observed groundwater levels. After simulation of the natural groundwater level (i.e. without any artificial extraction of water in the catchment), the impact of

Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

PubMed

Song, Young Jae; Erwin, Steven C; Rutter, Gregory M; First, Phillip N; Zhitenev, Nikolai B; Stroscio, Joseph A

2009-12-01

We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

View of entrance tunnel outside Portal elevator. Tunnel ahead to ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of entrance tunnel outside Portal elevator. Tunnel ahead to Control Center, right to Launchers, left to Antenna Silos - Titan One Missile Complex 2A, .3 miles west of 129 Road and 1.5 miles north of County Line Road, Aurora, Adams County, CO

Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

PubMed

Wang, Tuo; Vaxenburg, Roman; Liu, Wenyong; Rupich, Sara M; Lifshitz, Efrat; Efros, Alexander L; Talapin, Dmitri V; Sibener, S J

2015-01-27

The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

NASA Astrophysics Data System (ADS)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Jiang, Xiang-Wei

2017-06-01

The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green's function formalism with density functional theory. Aiming at performance improvement, two types of defect-induced transport behaviors are reported in this work. By examining the partial density of states of the system, we find the substitutional defect OAs that locates in the middle of tunneling region will introduce band-gap states, which can be used as stepping stones to increase the tunneling current nearly 3 times higher at large bias voltage (Vb≥0.3V). Another type of defects SeAs and VGa (Ga vacancy) create donor and acceptor states at the edge of conduction band (CB) and valence band (VB)respectively, which can change the band bending of the junction as well as increase the tunneling field obtaining a 1.5 times higher ON current. This provides an effective defect engineering approach for next generation TFET device design.

Review of hydrodynamic tunneling issues in high power particle accelerators

NASA Astrophysics Data System (ADS)

Tahir, N. A.; Burkart, F.; Schmidt, R.; Shutov, A.; Piriz, A. R.

2018-07-01

Full impact of one Large Hadron Collider (LHC) 7 TeV proton beam on solid targets made of different materials including copper and carbon, was simulated using an energy deposition code, FLUKA and a two-dimensional hydrodynamic code, BIG2, iteratively. These studies showed that the penetration depth of the entire beam comprised of 2808 proton bunches significantly increases due to a phenomenon named hydrodynamic tunneling of the protons and the shower. For example, the static range of a single 7 TeV proton and its shower is about 1 m in solid copper, but the full LHC beam will penetrate up to about 35 m in the target, if the hydrodynamic effects were included. Due to the potential implications of this result on the machine protection considerations, it was decided to have an experimental verification of the hydrodynamic tunneling effect. For this purpose, experiments were carried out at the CERN HiRadMat (High Radiation to Materials) facility in which extended solid copper cylindrical targets were irradiated with the 440 GeV proton beam generated by the Super Proton Synchrotron (SPS). Simulations of beam-target heating considering the same beam parameters that were used in the experiments, were also performed. These experiments not only confirmed the existence of the hydrodynamic tunneling, but the experimental measurements showed very good agreement with the experimental results as well. This provided confidence in the work on LHC related beam-matter heating simulations. Currently, a design study is being carried out by the international community (with CERN taking the leading role) for a post LHC collider named, the Future Circular Collider (FCC) which will accelerate two counter rotating proton beams up to a particle energy of 50 TeV. Simulations of the full impact of one FCC beam comprised of 10,600 proton bunches with a solid copper target have also been done. These simulations have shown that although the static range of a single 50 TeV proton and its shower

3. CABLE TUNNEL TO TEST STAND 1A, LOOKING SOUTH TO ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. CABLE TUNNEL TO TEST STAND 1-A, LOOKING SOUTH TO STAIRS LEADING UP TO CONTROL CENTER. - Edwards Air Force Base, Air Force Rocket Propulsion Laboratory, Control Center, Test Area 1-115, near Altair & Saturn Boulevards, Boron, Kern County, CA

Reproducible fabrication and applications of superconducting scanning tunneling microscope tips

NASA Astrophysics Data System (ADS)

Naaman, Ofer; Teizer, Winfried; Dynes, Robert C.

2001-03-01

We report on a method developed in our lab, for the fabrication of superconducting scanning tunneling microscope (STM) tips in a reproducible fashion. The fabrication process relies on sequential deposition of superconducting Pb and a proximity-coupled Ag capping layer onto a Pt/Ir tip. The tips were characterized by tunneling into both normal-metal and superconducting films, and the results confirm that the tips are superconducting with Tc and Δ close to that of bulk lead. The lead phonon structure in the tunneling density of states was observed, indicating a single step tunneling process. In an attempt to form STM Josephson junctions, we used our tips to form S/I/S junctions with R_NN ~50-100 kΩ. Results from spectroscopic measurements of these junctions at 2.0 K are discussed within the framework of the Ivanchenko and Zil'berman theory (Soviet Physics JETP, vol.28, 1272; 1969) of Josephson tunneling in the presence of strong phase fluctuations.

Predicition and Discovery of High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Crystalline Barriers

NASA Astrophysics Data System (ADS)

Butler, William

2005-03-01

Tunneling magnetoresistance in excess of 200% has recently been observed in magnetic tunnel junctions using bcc Fe or bcc CoFe electrodes with crystalline MgO tunnel barriers[1,2]. These results demonstrate that tunneling magnetoresistance depends on more than the ``electrode polarization''. This talk will describe the calculations that predicted high TMR in these and other systems[3,4,5]. These calculations helped us to understand certain principles that may lead to high TMR through coherent electron tunneling. They can be briefly summarized as follows: (1) If the symmetry of a Bloch state can be preserved as electrons cross the interfaces between the electrode and the tunnel barrier, this be used to advantage for spin filtering. (2) Evanescent states of different symmetries decay at different rates in the barrier. (3) Interfacial bonding can be very important in determining the probability that an electron can traverse the interface. (4) Electrons of disallowed symmetry cannot propagate in an electrode. Once these simple principles are understood, simple band codes can be used to screen and to develop heterostructures with the proper symmetries to obtain high TMR. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant AND S.-H. Yang, ``Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers,'' Nature Materials, Advance Online Publication [2] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, ``Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions,'' Nature Materials, Advance Online Publication [3] W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, ``Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches'' Phys. Rev. B 63, 054416 (2001) [4] J. Mathon, A. Umerski, ``Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction,'' Phys. Rev. B 63, 220403(R) (2001). [5] X.-G. Zhang, and W. H. Butler, ``Large magnetoresistance in

Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor); Leduc, Henry G. (Inventor)

1992-01-01

A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Emptying and filling a tunnel bronze

DOE PAGES

Marley, Peter M.; Abtew, Tesfaye A.; Farley, Katie E.; ...

2015-01-13

The classical orthorhombic layered phase of V 2O 5 has long been regarded as the thermodynamic sink for binary vanadium oxides and has found great practical utility as a result of its open framework and easily accessible redox states. Herein, we exploit a cation-exchange mechanism to synthesize a new stable tunnel-structured polymorph of V 2O 5 (ζ-V 2O 5) and demonstrate the subsequent ability of this framework to accommodate Li and Mg ions. The facile extraction and insertion of cations and stabilization of the novel tunnel framework is facilitated by the nanometer-sized dimensions of the materials, which leads to accommodationmore » of strain without amorphization. The topotactic approach demonstrated here indicates not just novel intercalation chemistry accessible at nanoscale dimensions but also suggests a facile synthetic route to ternary vanadium oxide bronzes (MxV 2O 5) exhibiting intriguing physical properties that range from electronic phase transitions to charge ordering and superconductivity.« less

Fabrication of Mg-X-O (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Yakushiji, K.; Kitagawa, E.; Ochiai, T.; Kubota, H.; Shimomura, N.; Ito, J.; Yoda, H.; Yuasa, S.

2018-05-01

We fabricated magnetic tunnel junctions with a 3d-transition material(X)-doped MgO (Mg-X-O) barrier, and evaluated the effect of the doping on magnetoresistance (MR) and microstructure. Among the variations of X (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn), X = Fe and Mn showed a high MR ratio of more than 100%, even at a low resistance-area product of 3 Ωμm2. The microstructure analysis revealed that (001) textured orientation formed for X = Fe and Mn despite substantial doping (about 10 at%). The elemental mappings indicated that Fe atoms in the Mg-Fe-O barrier were segregated at the interfaces, while Mn atoms were evenly involved in the Mg-Mn-O barrier. This suggests that MgO has high adaptability for Fe and Mn dopants in terms of high MR ratio.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Design features and operational characteristics of the Langley 0.3-meter transonic cryogenic tunnel

NASA Technical Reports Server (NTRS)

Kilgore, R. A.

1976-01-01

Experience with the Langley 0.3 meter transonic cryogenic tunnel, which is fan driven, indicated that such a tunnel presents no unusual design difficulties and is simple to operate. Purging, cooldown, and warmup times were acceptable and were predicted with good accuracy. Cooling with liquid nitrogen was practical over a wide range of operating conditions at power levels required for transonic testing, and good temperature distributions were obtained by using a simple liquid nitrogen injection system. To take full advantage of the unique Reynolds number capabilities of the 0.3 meter transonic tunnel, it was designed to accommodate test sections other than the original, octagonal, three dimensional test section. A 20- by 60-cm two dimensional test section was recently installed and is being calibrated. A two dimensional test section with self-streamlining walls and a test section incorporating a magnetic suspension and balance system are being considered.

Ultrahigh Vacuum Scanning Tunneling Microscopy and Spectroscopy of Single-Walled Carbon Nanotubes Interfaced with Silicon Surfaces

NASA Astrophysics Data System (ADS)

Albrecht, Peter; Lyding, Joseph

2008-03-01

The UHV-STM was used to examine SWNTs directly interfaced with hydrogen-passivated Si(100). Dry contact transfer (DCT) [1] enabled the UHV deposition of SWNTs with minimal disruption of the atomically flat Si(100)-2x1:H surface. Isolated, rather than bundled, SWNTs could be routinely located for atomically resolved imaging, tunneling I-V spectroscopy [2], lateral manipulation [3], and proximal substrate modification. Weakly adsorbed SWNTs initially unstable in the presence of the rastered STM tip could be stabilized by depassivating the underlying H-Si(100) surface via UHV-STM electron-stimulated H desorption [4], which in the case of one chiral semiconducting SWNT also promoted the local alignment of the zigzag symmetry direction on the underside of the tube with the clean Si dimer rows [5]. The growing body of first-principles simulations of the SWNT/Si(100) system [6] was drawn upon in our interpretation of such local perturbations. [1] APL 83, 5029 (2003). [2] Nanotechnology 18, 095204 (2007). [3] Small 3, 146 (2007). [4] Nanotechnology 18, 125302 (2007). [5] Small 3, 1402 (2007). [6] JAP 100, 124304 (2006).

As-Deposited (La1-xSrx)(Ga1-y-zMgyCoz)O3-(x+y+z)/2 Crystallized Thin Films Prepared by Pulsed Laser Deposition for Application to Solid Oxide Fuel Cell Electrolyte

NASA Astrophysics Data System (ADS)

Mitsugi, Fumiaki; Kanazawa, Seiji; Ohkubo, Toshikazu; Nomoto, Yukiharu; Ishihara, Tatsumi; Takita, Yusaku

2004-01-01

Doped lanthanum gallate (La1-xSrx)(Ga1-y-zMgyCoz)O3-(x+y+z)/2 (LSGMCO) perovskite oxide films were deposited on a quartz glass, LaAlO3 single-crystal substrate and porous anode electrode of a solid oxide fuel cell (SOFC) by pulsed laser deposition. It was necessary to increase the substrate temperature up to 800°C for a crystallization of the LSGMCO films. The film deposited on the LaAlO3 single-crystal substrate grew along the c-axis. The as-deposited LSGMCO thick film fabricated on the porous substrate at 800°C and at an oxygen pressure of 20Pa was formed from polycrystal columns and showed a high conductivity of 0.7S/cm at a measurement temperature of 800°C. The activation energies were 0.72 eV at 600-800°C and 1.05 eV at 400-600°C.

Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells.

PubMed

Zhang, Jinbao; Hultqvist, Adam; Zhang, Tian; Jiang, Liangcong; Ruan, Changqing; Yang, Li; Cheng, Yibing; Edoff, Marika; Johansson, Erik M J

2017-10-09

Perovskite solar cells, as an emergent technology for solar energy conversion, have attracted much attention in the solar cell community by demonstrating impressive enhancement in power conversion efficiencies. However, the high temperature and manually processed TiO 2 underlayer prepared by spray pyrolysis significantly limit the large-scale application and device reproducibility of perovskite solar cells. In this study, lowtemperature atomic layer deposition (ALD) is used to prepare a compact Al 2 O 3 underlayer for perovskite solar cells. The thickness of the Al 2 O 3 layer can be controlled well by adjusting the deposition cycles during the ALD process. An optimal Al 2 O 3 layer effectively blocks electron recombination at the perovskite/fluorine-doped tin oxide interface and sufficiently transports electrons through tunneling. Perovskite solar cells fabricated with an Al 2 O 3 layer demonstrated a highest efficiency of 16.2 % for the sample with 50 ALD cycles (ca. 5 nm), which is a significant improvement over underlayer-free PSCs, which have a maximum efficiency of 11.0 %. Detailed characterization confirms that the thickness of the Al 2 O 3 underlayer significantly influences the charge transfer resistance and electron recombination processes in the devices. Furthermore, this work shows the feasibility of using a high band-gap semiconductor such as Al 2 O 3 as the underlayer in perovskite solar cells and opens up pathways to use ALD Al 2 O 3 underlayers for flexible solar cells. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

X-ray diffraction study of the molecular propolis films deposited from an alcohol solution onto the cleavage surfaces of layered V2VI3 compounds

NASA Astrophysics Data System (ADS)

Drapak, S. I.; Gavrylyuk, S. V.; Kaminskii, V. M.; Kovalyuk, Z. D.

2008-09-01

The structures of the molecular propolis films deposited from an alcohol solution on the (0001) cleavage surface of layered bismuth selenide and telluride are studied by X-ray diffraction. Despite the chemical interaction between the semiconductor substrates and the organic-substance components, the molecular structural ordering of the propolis films is shown to be identical to that in the films of this substance on the surface of amorphous glass substrates. The chemical and deformation interaction between the organic substance and the layered V2VI3 compounds is found to result in the formation of an organic-inorganic sandwich nanostructure at a distance of ˜0.3 μm from the layered crystal-propolis film interface.

Validation of US3D for Capsule Aerodynamics using 05-CA Wind Tunnel Test Data

NASA Technical Reports Server (NTRS)

Schwing, Alan

2012-01-01

Several comparisons of computational fluid dynamics to wind tunnel test data are shown for the purpose of code validation. The wind tunnel test, 05-CA, uses a 7.66% model of NASA's Multi-Purpose Crew Vehicle in the 11-foot test section of the Ames Unitary Plan Wind tunnel. A variety of freestream conditions over four Mach numbers and three angles of attack are considered. Test data comparisons include time-averaged integrated forces and moments, time-averaged static pressure ports on the surface, and Strouhal Number. The applicability of the US3D code to subsonic and transonic flow over a bluff body is assessed on a comprehensive data set. With close comparison, this work validates US3D for highly separated flows similar to those examined here.

12 CFR 996.3 - Demand deposit accounts.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 12 Banks and Banking 7 2010-01-01 2010-01-01 false Demand deposit accounts. 996.3 Section 996.3 Banks and Banking FEDERAL HOUSING FINANCE BOARD NON-BANK SYSTEM ENTITIES AUTHORITY FOR BANK ASSISTANCE OF THE RESOLUTION FUNDING CORPORATION § 996.3 Demand deposit accounts. Each Bank shall allow any...

Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics

PubMed Central

Kim, Seongsu; Kim, Tae Yun; Lee, Kang Hyuck; Kim, Tae-Ho; Cimini, Francesco Arturo; Kim, Sung Kyun; Hinchet, Ronan; Kim, Sang-Woo; Falconi, Christian

2017-01-01

Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air–SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n+ and p/p+ junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand. PMID:28649986

Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics

NASA Astrophysics Data System (ADS)

Kim, Seongsu; Kim, Tae Yun; Lee, Kang Hyuck; Kim, Tae-Ho; Cimini, Francesco Arturo; Kim, Sung Kyun; Hinchet, Ronan; Kim, Sang-Woo; Falconi, Christian

2017-06-01

Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air-SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n+ and p/p+ junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand.

An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

NASA Astrophysics Data System (ADS)

Rohde, S.; Barnett, S. A.; Choi, C.-H.

1989-06-01

A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

Drift studies--comparison of field and wind tunnel experiments.

PubMed

Stadler, R; Regenauer, W

2005-01-01

Drift at pesticide application leads to a pollution of non-target crops, non-target species and surface water. Spray drift is influenced by many factors like environmental conditions, vegetation, technical conditions, and physical properties of the tank mixes and influenced by Chemicals. Field experiments to characterise spray drift effects with the risk of permanent changing weather conditions can be supported by wind tunnel experiments. Wind tunnel experiments do not lead to the same soil deposition curves like field experiments, but the ratio of drift reduction potential is comparable.

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

NASA Astrophysics Data System (ADS)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

Point-contact tunneling in monophasic and polyphasic Y-Ba-Cu-O samples: Experiment and model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gonnelli, R.S.; Andreone, D.; Lacquaniti, V.

1989-02-01

Tunneling experiments using large-area point-contact structures have been performed on several monophasic polycrystalline Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ samples and on polyphasic samples containing, mixed with the previous superconducting phase, also about 11% of the so-called green phase (BaY/sub 2/CuO/sub 5/). Both niobium and Y-Ba-Cu-O tips were used as counterelectrodes and measurements were made at 4.2 and 77 K. Results obtained at different experimental conditions show great reproducibility indicating the presence of the gap voltage at about 20 mV in the dynamic resistance curves. A phenomenological model was then developed to interpret in a quantitative way our data by meansmore » of a decomposition of the experimental conductance into a background component and a superconducting-tunneling component. The former results essentially in a parabolic contribution versus the bias voltage typical of a tunneling between normallike junction electrodes while the latter component is smeared out in voltage by a large amount of broadening. Using the model in a least-squares fit of the experimental data of Nb/Y-Ba-Cu-O junctions, values V/sub G/ = 21.3 +- 0.8 mV and V/sub G/ = 22.0 +- 0.6 mV for the voltage gaps at 4.2 K of monophasic and polyphasic materials, respectively, have been determined. These results have been well confirmed by measurements on Y-Ba-Cu-O/Y-Ba-Cu-O junctions while, at 77 K, there are no indications of a superconducting tunneling. We obtained also the parameters of the background conductance, which indicates the presence of a nonsuperconducting layer at the surface of the material.« less

Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz

This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperaturesmore » (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.« less

Plio-Pleistocene facies environments from the KBS Member, Koobi Fora Formation: implications for climate controls on the development of lake-margin hominin habitats in the northeast Turkana Basin (northwest Kenya).

PubMed

Lepre, Christopher J; Quinn, Rhonda L; Joordens, Josephine C A; Swisher, Carl C; Feibel, Craig S

2007-11-01

Climate change is hypothesized as a cause of major events of Plio-Pleistocene East African hominin evolution, but the vertically discontinuous and laterally confined nature of the relevant geological records has led to difficulties with assessing probable links between the two. High-resolution sedimentary sequences from lacustrine settings can provide comprehensive data of environmental changes and detailed correlations with well-established orbital and marine records of climate. Hominin-bearing deposits from Koobi Fora Ridge localities in the northeast Turkana Basin of Kenya are an archive of Plio-Pleistocene lake-margin sedimentation though significant developmental junctures of northern African climates, East African environments, and hominin evolution. This study examines alluvial channel and floodplain, nearshore lacustrine, and offshore lacustrine facies environments for the approximately 136-m-thick KBS Member (Koobi Fora Formation) exposed at the Koobi Fora Ridge. Aspects of the facies environments record information on the changing hydrosedimentary dynamics of the lake margin and give insights into potential climatic controls. Seasonal/yearly climate changes are represented by the varve-like laminations in offshore mudstones and the slickensides, dish-shaped fractures, and other paleosol features overprinted on floodplain strata. Vertical shifts between facies environments, however, are interpreted to indicate lake-level fluctuations deriving from longer-term, dry-wet periods in monsoonal rainfall. Recurrence periods for the inferred lake-level changes range from about 10,000 to 50,000 years, and several are consistent with the average estimated timescales of orbital precession ( approximately 20,000 years) and obliquity ( approximately 40,000 years). KBS Member facies environments from the Koobi Fora Ridge document the development of lake-margin hominin habitats in the northeast Turkana Basin. Environmental changes in these habitats may be a result of

Plasma assisted facile synthesis of vanadium oxide (V3O7) nanostructured thin films

NASA Astrophysics Data System (ADS)

Singh, Megha; Saini, Sujit K.; Kumar, Prabhat; Sharma, Rabindar K.; Reddy, G. B.

2018-05-01

Vanadium oxides nanostructured thin films are synthesized using plasma assisted sublimation process. The effect of temperatures on growth of V2O5 and V3O7 thin films is studied. Scanning electron micrographs shows different morphologies are obtained at different temperatures i.e. at 450 °C nano cubes-like structures are obtained, whereas at 550 °C and 650 °C nanorods are obtained. Sample deposited at 450 °C is entirely composed of V2O5 and sample at higher temperatures are composed of mixed phase of vanadium oxides i.e. V2O5 and V3O7. As temperature increased, so the content of V3O7 in the sample is increased as confirmed by XRD and Raman analyses.

Modeling and control study of the NASA 0.3-meter transonic cryogenic tunnel for use with sulfur hexafluoride medium

NASA Technical Reports Server (NTRS)

Balakrishna, S.; Kilgore, W. Allen

1992-01-01

The NASA Langley 0.3-m Transonic Cryogenic Tunnel is to be modified to operate with sulfur hexafluoride gas while retaining its present capability to operate with nitrogen. The modified tunnel will provide high Reynolds number flow on aerodynamic models with two different test gases. The document details a study of the SF6 tunnel performance boundaries, thermodynamic modeling of the tunnel process, nonlinear dynamical simulation of math model to yield tunnel responses, the closed loop control requirements, control laws, and mechanization of the control laws on the microprocessor based controller.

Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

PubMed

Wang, Liancheng; Cheng, Yan; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong

2016-01-20

Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial advanced physical models of semiconductor devices (APSYS), we found that low tunnel resistance can be achieved in the n(+)-GaN/u-InGaN/p(+)-GaN TJ, which has a lower tunneling barrier and an enhanced electric field due to the polarization effect. Graphene TCEs and hybrid graphene-TJ TCEs are then modeled. The designed hybrid TJ-graphene TCEs show sufficient current diffusion length (Ls), low introduced series resistance, and high transmittance. The assembled TJ LED with the triple-layer graphene (TLG) TCEs show comparable optoelectrical performance (3.99 V@20 mA, LOP = 10.8 mW) with the reference LED with ITO TCEs (3.36 V@20 mA, LOP = 12.6 mW). The experimental results further prove that the TJ-graphene structure can be successfully incorporated as TCEs for lateral nitride LEDs.

Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy.

PubMed

Timm, Rainer; Eisele, Holger; Lenz, Andrea; Ivanova, Lena; Vossebürger, Vivien; Warming, Till; Bimberg, Dieter; Farrer, Ian; Ritchie, David A; Dähne, Mario

2010-10-13

Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.

Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1−x}As/AlGaAs tunnel junction light-emitting transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Cheng-Han; Wu, Chao-Hsin, E-mail: chaohsinwu@ntu.edu.tw; Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In{sub x}Ga{sub 1−x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

2017-07-01

The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

Performance of the 0.3-meter transonic cryogenic tunnel with air, nitrogen, and sulfur hexafluoride media under closed loop automatic control

NASA Technical Reports Server (NTRS)

Balakrishna, S.; Kilgore, W. Allen

1995-01-01

The NASA Langley 0.3-m Transonic Cryogenic Tunnel was modified in 1994, to operate with any one of the three test gas media viz., air, cryogenic nitrogen gas, or sulfur hexafluoride gas. This document provides the initial test results with respect to the tunnel performance and tunnel control, as a part of the commissioning activities on the microcomputer based controller. The tunnel can provide precise and stable control of temperature to less than or equal to +/- 0.3 K in the range 80-320 K in cyro mode or 300-320 K in air/SF6 mode, pressure to +/- 0.01 psia in the range 15-88 psia and Mach number to +/- O.0015 in the range 0.150 to transonic Mach numbers up to 1.000. A new heat exchanger has been included in the tunnel circuit and is performing adequately. The tunnel airfoil testing benefits considerably by precise control of tunnel states and helps in generating high quality aerodynamic test data from the 0.3-m TCT.

Simulations of "tunnelling of the 3rd kind"

NASA Astrophysics Data System (ADS)

Mou, Zong-Gang; Saffin, Paul M.; Tognarelli, Paul; Tranberg, Anders

2017-07-01

We consider the phenomenon of "tunnelling of the 3rd kind" [1], whereby a magnetic field may traverse a classically impenetrable barrier by pair creation of unimpeded quantum fermions. These propagate through the barrier and generate a magnetic field on the other side. We study this numerically using quantum fermions coupled to a classical Higgs-gauge system, where we set up a magnetic field outside a box shielded by two superconducting barriers. We examine the magnitude of the internal magnetic field, and find agreement with existing perturbative results within a factor of two.

Primary thermometry with nanoscale tunnel junctions

NASA Astrophysics Data System (ADS)

Hirvi, K. P.; Kauppinen, J. P.; Paalanen, M. A.; Pekola, J. P.

1995-10-01

We have found current-voltage (I-V) and conductance (dI/dV) characteristics of arrays of nanoscale tunnel junctions between normal metal electrodes to exhibit suitable features for primary thermometry. The current through a uniform array depends on the ratio of the thermal energy kBT and the electrostatic charging energy E c of the islands between the junctions and is completely blocked by Coulomb repulsion at T = 0 and at small voltages eV/2 ≤ Ec. In the opposite limit, kBT ≫ Ec, the width of the conductance minimum scales linearly and universally with T and N, the number of tunnel junctions, and qualifies as a primary thermometer. The zero bias drop in the conductance is proportional to T-1 and can be used as a secondary thermometer. We will show with Monte Carlo simulations how background charge and nonuniformities of the array will affect the thermometer.

Building a 3d Reference Model for Canal Tunnel Surveying Using Sonar and Laser Scanning

NASA Astrophysics Data System (ADS)

Moisan, E.; Charbonnier, P.; Foucher, P.; Grussenmeyer, P.; Guillemin, S.; Koehl, M.

2015-04-01

Maintaining canal tunnels is not only a matter of cultural and historical preservation, but also a commercial necessity and a security issue. This contribution adresses the problem of building a full 3D reference model of a canal tunnel by merging SONAR (for underwater data recording) and LASER data (for the above-water parts). Although both scanning devices produce point clouds, their properties are rather different. In particular, SONAR data are very noisy and their processing raises several issues related to the device capacities, the acquisition setup and the tubular shape of the tunnel. The proposed methodology relies on a denoising step by meshing, followed by the registration of SONAR data with the geo-referenced LASER data. Since there is no overlap between point clouds, a 3-step procedure is proposed to robustly estimate the registration parameters. In this paper, we report a first experimental survey, which concerned the entrance of a canal tunnel. The obtained results are promising and the analysis of the method raises several improvement directions that will help obtaining more accurate models, in a more automated fashion, in the limits of the involved technology.

Preparation of polystyrene microspheres for laser velocimetry in wind tunnels

NASA Technical Reports Server (NTRS)

Nichols, Cecil E., Jr.

1987-01-01

Laser Velocimetry (L/V) had made great strides in replacing intrusive devices for wind tunnel flow measurements. The weakness of the L/V has not been the L/V itself, but proper size seeding particles having known drag characteristics. For many Langley Wind Tunnel applications commercial polystyrene latex microspheres suspended in ethanol, injected through a fluid nozzle provides excellent seeding but was not used due to the high cost. This paper provides the instructions, procedures, and formulations for producing polystyrene latex monodisperse microspheres of 0.6, 1.0, 1.7, 2.0, and 2.7 micron diameters. These are presently being used at Langley Research Center as L/V seeding particles.

Scanning Tunneling Spectroscopy of Potassium on Graphene

NASA Astrophysics Data System (ADS)

Cormode, Daniel; Leroy, Brian; Yankowitz, Matthew

2012-02-01

We investigate the effect of charged impurities on the electronic properties of large single crystal CVD grown graphene using scanning tunneling microscopy. Mono- and multilayer crystals were prepared by transferring graphene from copper onto exfoliated boron nitride flakes on 300 nm SiO2 substrates. The boron nitride provides an ultra flat surface for the graphene. Potassium atoms are controllably deposited on the graphene at low temperature by heating a nearby getter source. Scanning tunneling spectroscopy and transport measurements were performed in ultra high vacuum at 4.5 K. Transport measurements demonstrate the shifting of the Dirac point as the samples are doped, while STM measurements demonstrate the size, arrangement and local electronic influence of the potassium atoms.

To Tunnel or not to Tunnel, Proton Transfer is the Question.

NASA Astrophysics Data System (ADS)

Chew, Kathryn; Nemchick, Deacon; Vaccaro, Patrick

2014-06-01

The transduction of protons between donor and acceptor sites, as mediated by the action of adjoining hydrogen bonds, represents one of the most ubiquitous of chemical transformations. While the basic mechanisms underlying such phenomena often can be ascribed to simple acid-base chemistry, the putative roles of selective nuclear and electronic displacements should not be discounted, especially when the presence of a sizeable potential barrier impedes classical hydron-migration pathways. The vibrational and isotopic specificity of hindered intramolecular proton transfer taking place within the ground (˜{X1}{A}1) and the lowest-lying excited (˜{A1}B2 (π *π) electronic states of the prototypical tropolone (TrOH) system has been probed by implementing multiple-color variants of resonant four-wave mixing (RFWM) spectroscopy, with polarization-resolved detection allowing for the extraction of quantitative rotation-tunneling information. The marked dependence of unimolecular dynamics on the extent and the type of excitation deposited into TrOH internal degrees of freedom will be discussed. Experimentally observed trends and propensities for tunneling-mediated reactivity will be interpreted through use of accompanying quantum-chemical calculations.

Thin SOI lateral IGBT with band-to-band tunneling mechanism

NASA Astrophysics Data System (ADS)

Fu, Qiang; Tang, Zhaohuan; Tan, Kaizhou; Wang, Zhikuan; Mei, Yong

2017-06-01

In this paper, a novel 200V lateral IGBT on thin SOI layer with a band-to-band tunneling junction near the anode is proposed. The structure and the operating mechanism of the proposed IGBT are described and discussed. Its main feature is that the novel IGBT structure has a unique abrupt doped p++/n++ tunneling junction in the side of the anode. By utilizing the reverse bias characteristics of the tunneling junction, the proposed IGBT can achieve excellent reverse conducting performance. Numerical simulations suggest that a low reverse conduction voltage drop VR=-1.6V at a current density of 100A/cm2 and a soft factor S=0.63 of the build-in diode are achieved.

Induced Superconductivity and Engineered Josephson Tunneling Devices in Epitaxial (111)-Oriented Gold/Vanadium Heterostructures.

PubMed

Wei, Peng; Katmis, Ferhat; Chang, Cui-Zu; Moodera, Jagadeesh S

2016-04-13

We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultrahigh vacuum conditions, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with clean interface. We obtained atomically smooth Au thin films with thicknesses even down to below a nanometer showing near-ideal surface quality. The as-grown V/Au bilayer heterostructure exhibits superconducting transition at around 3.9 K. Clear Josephson tunneling and Andreev reflection are observed in S-I-S tunnel junctions fabricated from the epitaxial bilayers. The barrier thickness dependent tunneling and the associated subharmonic gap structures (SGS) confirmed the induced superconductivity in Au (111), paving the way for engineering thin film heterostructures based on p-wave superconductivity and nano devices exploiting Majorana Fermions for quantum computing.

Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cubukcu, M.; Laczkowski, P.; Vergnaud, C.

2015-02-28

We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (up to ∼2 Ω) is obtained with direct contacts, the signal is strongly enhanced (∼400 Ω) by inserting a tunnel barrier. In addition, we studied the resistance-area product (R.A) of a variety of contacts on CVD graphene. In particular, we compared the R.A products of alumina and magnesium oxide tunnel barriers grown by sputteringmore » deposition of aluminum or magnesium and subsequent natural oxidation under pure oxygen atmosphere or by plasma. When using an alumina tunnel barrier on CVD graphene, the R.A product is high and exhibits a large dispersion. This dispersion can be highly reduced by using a magnesium oxide tunnel barrier, as for the R.A value. This study gives insight in the material quest for reproducible and efficient spin injection in CVD graphene.« less

Ultra-senstitive magnesium oxide-based magnetic tunnel junctions for spintronic immunoassay

NASA Astrophysics Data System (ADS)

Shen, Weifeng

We systematically studied the spin-dependent tunnel properties of MgO-based magnetic tunnel junctions (MTJs). Utilizing the spin-coherent tunnel effects of the MgO (001) insulating layer, we have achieved large tunneling magnetoresistance (TMR) ratios (above 200%) at room temperature in optimized MTJ devices. We have shown that the MgO surface roughness, and therefore device magnetoresistance, depends strongly on the pressure of the Ar sputtering gas. We have investigated the characteristics of MgO-MTJs, including their dependence on barrier thickness and bias voltage, their thermal stability and resistance to electrostatic discharge (ESD). We have also fabricated MgO-MTJs with a synthetic antiferromagnetic (SAF) free layer, which exhibits a coherent, single-domain-like switching. Our data show that MgO-MTJs have superior properties for low-field magnetic field sensing applications as compared with conventional AlOx-based MTJs. Based on this giant TMR effect, we designed and developed ultra-sensitive magnetic tunnel junction (MTJ) sensors and sensor arrays for biomagnetic sensing applications. By integrating MTJ sensor arrays into microfluidic channels, we were able to detect the presence of moving, micron-size superparamagnetic beads in real time. We have obtained an average signal of 80 mV for a single Dynal M-280 bead, with a signal-to-noise ratio (SNR) of 24 dB. We also biologically treated the MTJ sensor array surfaces, and demonstrated the detection of 2.5 muM single strand target DNA labeled with 16-nm-diameter Fe3O 4 nanoparticles (NPs). Our measured signal of 72 muV indicates that the current system's detection limit for analyte DNA is better than 150 nM. We also demonstrated the detection of live HeLa cells labeled with Fe 3O4 nanoparticles, with an effective signal of 8 mV and a signal-to-noise ratio of 6 dB. These results represent an important milestone in the development of spintronics immunoassay technology: the detection of a single live cell

Nonlinear tunneling of optical soliton in 3 coupled NLS equation with symbolic computation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mani Rajan, M.S., E-mail: senthilmanirajanofc@gmail.com; Mahalingam, A.; Uthayakumar, A.

We investigated the soliton solution for N coupled nonlinear Schrödinger (CNLS) equations. These equations are coupled due to the cross-phase-modulation (CPM). Lax pair of this system is obtained via the Ablowitz–Kaup–Newell–Segur (AKNS) scheme and the corresponding Darboux transformation is constructed to derive the soliton solution. One and two soliton solutions are generated. Using two soliton solutions of 3 CNLS equation, nonlinear tunneling of soliton for both with and without exponential background has been discussed. Finally cascade compression of optical soliton through multi-nonlinear barrier has been discussed. The obtained results may have promising applications in all-optical devices based on optical solitons,more » study of soliton propagation in birefringence fiber systems and optical soliton with distributed dispersion and nonlinearity management. -- Highlights: •We consider the nonlinear tunneling of soliton in birefringence fiber. •3-coupled NLS (CNLS) equation with variable coefficients is considered. •Two soliton solutions are obtained via Darboux transformation using constructed Lax pair. •Soliton tunneling through dispersion barrier and well are investigated. •Finally, cascade compression of soliton has been achieved.« less

Luminescence behaviour and deposition of Sc2O3 thin films from scandium(III) acetylacetonate at ambient pressure

NASA Astrophysics Data System (ADS)

Dixon, Sebastian C.; Jiamprasertboon, Arreerat; Carmalt, Claire J.; Parkin, Ivan P.

2018-05-01

Scandium(III) oxide thin film deposition has been historically difficult to achieve without the use of vacuum-based or wet chemical systems due to precursor limitations of low vapour pressure or ambient instability. In this letter, the adoption of aerosol-assisted delivery of scandium(III) acetylacetonate has enabled the chemical vapour deposition of polycrystalline and amorphous Sc2O3 thin films at ambient pressure with high growth rates (ca. 500 nm h-1). The scandia films were intrinsically highly photoluminescent, exhibiting broad emission bands centred at 3.6 and 3.0 eV, which increased significantly in intensity upon aerobic annealing, accompanying a transition from amorphous to crystalline, while bands appearing at 2.1 and 2.3 eV seemed to occur only in the crystalline films. In addition, both amorphous and crystalline scandia films exhibited blue-green vibronic fine structure between 2.3 and 3.2 eV attributed to the electronic transition B→κ Σ+ 2 Σ+ in surface ⋯ O - ⋯ O - S c = O groups and split by a vibrational mode observed at 920 ± 60 cm - 1 by infrared spectroscopy. Band gaps of amorphous and crystalline Sc2O3 were determined to be 5.3 and 5.7 eV, respectively via diffuse reflectance. All films had high refractive indices, varying between 1.8 and 2.0 at 400 nm depending on film thickness and carrier gas used in the deposition; film thicknesses less than ca. 300 nm were observed to have a strong influence on the refractive index measured, while there was little variation for films thicker than this. The synthesis process itself is exceedingly low-cost and facile thus promising streamlined industrial scalability.

Space shuttle phase B wind tunnel model and test information. Volume 3: Launch configuration

NASA Technical Reports Server (NTRS)

Glynn, J. L.; Poucher, D. E.

1988-01-01

Archived wind tunnel data are available for flyback booster or other alternative recoverable configurations as well as reusable orbiters studied during initial development (Phase B) of the Space Shuttle. Considerable wind tunnel data was acquired by the competing contractors and the NASA Centers for an extensive variety of configurations with an array of wing and body planforms. All contractor and NASA wind tunnel data acquired in the Phase B development have been compiled into a data base and are available for application to current winged flyback or recoverable booster aerodynamic studies. The Space Shuttle Phase B Wind Tunnel Database is structured by vehicle component and configuration type. Basic components include booster, orbiter and launch vehicle. Booster configuration types include straight and delta wings, canard, cylindrical, retroglide and twin body. Orbital configuration types include straight and delta wings, lifting body, drop tanks and double delta wings. This is Volume 3 (Part 2) of the report -- Launch Configuration -- which includes booster and orbiter components in various stacked and tandem combinations.

Design consideration in constructing high performance embedded Knowledge-Based Systems (KBS)

NASA Technical Reports Server (NTRS)

Dalton, Shelly D.; Daley, Philip C.

1988-01-01

As the hardware trends for artificial intelligence (AI) involve more and more complexity, the process of optimizing the computer system design for a particular problem will also increase in complexity. Space applications of knowledge based systems (KBS) will often require an ability to perform both numerically intensive vector computations and real time symbolic computations. Although parallel machines can theoretically achieve the speeds necessary for most of these problems, if the application itself is not highly parallel, the machine's power cannot be utilized. A scheme is presented which will provide the computer systems engineer with a tool for analyzing machines with various configurations of array, symbolic, scaler, and multiprocessors. High speed networks and interconnections make customized, distributed, intelligent systems feasible for the application of AI in space. The method presented can be used to optimize such AI system configurations and to make comparisons between existing computer systems. It is an open question whether or not, for a given mission requirement, a suitable computer system design can be constructed for any amount of money.

Flow quality experiment in a tandem nozzle wind tunnel at Mach 3

NASA Astrophysics Data System (ADS)

Wu, Jie; Zamre, Pradip; Radespiel, Rolf

2015-01-01

In this study, the disturbance characterization and flow quality improvement of a newly designed Tandem Nozzle Mach 3 Wind Tunnel are presented. Firstly, a combined modal analysis is conducted to characterize the freestream disturbances with initial set-up of the settling chamber by using a Pitot probe and a hot-wire anemometry. Then, disturbance reduction in the supersonic wind tunnel is investigated by inserting various damping materials into the settling chamber, while a Pitot probe instrumented with Kulite sensor is employed to monitor the variation of the Pitot pressure fluctuation in the test section. Eventually, an optimized configuration of the settling chamber is determined by a combination of certain damping materials. Afterward, the freestream disturbances are re-characterized with the optimized set-up of the settling chamber, and the disturbance level is found to be significantly reduced. Through this study, valuable experience has been acquired for the disturbance reduction in tandem nozzle type supersonic wind tunnel for the first time, which enhances the feasibility of extending the operation range of conventional hypersonic Ludwieg tubes.

Carpal Tunnel Syndrome

PubMed Central

Zimmerman, Gregory R.

1994-01-01

Carpal tunnel syndrome is a neuropathy resulting from compression of the median nerve as it passes through a narrow tunnel in the wrist on its way to the hand. The lack of precise objective and clinical tests, along with symptoms that are synonymous with other syndromes in the upper extremity, cause carpal tunnel syndrome to appear to be a rare entity in athletics. However, it should not be ruled out as a possible etiology of upper extremity paralysis in the athlete. More typically, carpal tunnel syndrome is the most common peripheral entrapment neuropathy encountered in industry. Treatment may include rest and/or splinting of the involved wrist, ice application, galvanic stimulation, or iontophoresis to reduce inflammation, and then transition to heat modalities and therapeutic exercises for developing flexibility, strength, and endurance. In addition, an ergonomic assessment should be conducted, resulting in modifications to accommodate the carpal tunnel syndrome patient. ImagesFig 3.Fig 4.Fig 5.Fig 6.Fig 7. PMID:16558255

Tunneling in BP-MoS2 heterostructure

NASA Astrophysics Data System (ADS)

Liu, Xiaochi; Qu, Deshun; Kim, Changsik; Ahmed, Faisal; Yoo, Won Jong

Tunnel field effect transistor (TFET) is considered to be a leading option for achieving SS <60 mV/dec. In this work, black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunction devices are fabricated. We find that thin BP flake and MoS2 form normal p-n junctions, tunneling phenomena can be observed when BP thickness increases to certain level. PEO:CsClO4 is applied on the surface of the device together with a side gate electrode patterned together with source and drain electrodes. The Fermi level of MoS2 on top of BP layer can be modulated by the side gating, and this enables to vary the MoS2-BP tunnel diode property from off-state to on-state. Since tunneling is the working mechanism of MoS2-BP junction, and PEO:CsClO4\\ possesses ultra high dielectric constant and small equivalent oxide thickness (EOT), a low SS of 55 mV/dec is obtained from MoS2-BP TFET. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

NASA Astrophysics Data System (ADS)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-03-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.

PubMed

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-12-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N + pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g  = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Temperature dependence of a superconducting tunnel junction x-ray detector

NASA Astrophysics Data System (ADS)

Hiller, Lawrence J.; Labov, Simon E.; Mears, Carl A.; Barfknecht, Andrew T.; Frank, Matthias A.; Netel, Harrie; Lindeman, Mark A.

1995-09-01

Superconducting tunnel junctions can be used as part of a high-resolution, energy-dispersive x- ray detector. The energy of the absorbed x ray is used to break superconducting electron pairs, producing on the order of 10(superscript 6) excitations, called quasiparticles. The number of quasiparticles produced is proportional to the energy of the absorbed x ray. When a bias voltage is maintained across the barrier, these quasiparticles produce a net tunneling current. Either the peak tunneling current or the total tunneled charge may be measured to determine the energy of the absorbed x ray. The tunneling rate, and therefore the signal, is enhanced by the use of a quasiparticle trap near the tunnel barrier. The trapping efficiency is improved by decreasing the energy gap, though this reduces the maximum temperature at which the device may operate. In our niobium/aluminum configuration, we can very the energy gap in the trapping layer by varying its thickness. This paper examines the performance of two devices with 50 nm aluminum traps at temperatures ranging from 100 mK to 700 mK. We found that this device has a very good energy resolution of about 12 eV FWHM at 1 keV. This energy resolution is independent of temperature for much of this temperature range.

Preparation and electrical properties of Cr 2O 3 gate insulator embedded with Fe dot

NASA Astrophysics Data System (ADS)

Yokota, Takeshi; Kuribayashi, Takaaki; Murata, Shotaro; Gomi, Manabu

2008-09-01

We investigated the electrical properties of a metal (Au)/insulator (magneto-electric materials: Cr 2O 3)/magnetic materials (Fe)/tunnel layer (Cr 2O 3)/semiconductor (Si) capacitor. This capacitor shows the typical capacitance-voltage ( C- V) properties of an Si-MIS capacitor with hysteresis depending on the Fe dispersibility which is determined by the deposition condition. The C- V curve of the only sample having a 0.5 nm Fe layer was seen to have a hysteresis window with a clockwise trace, indicating that electrons have been injected into the ultra-thin Fe layer. The samples having Fe layers of other thicknesses show a counterclockwise trace, which indicates that the film has mobile ionic charges due to the dispersed Fe. These results indicated that the charge-injection site, which works as a memory, in the Cr 2O 3 can be prepared by Fe insertion, which is deposited using well-controlled conditions. The results also revealed the possibility of an MIS capacitor containing both ferromagnetic materials and an ME insulating layer in a single system.

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, N.; Osada, T.

2014-07-21

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap ofmore » less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.« less

A V(IV) Hydroxyhydrogenomonophosphate with an Intersecting Tunnel Structure: HK 4[V 10O 10(H 2O) 2(OH) 4(PO 4) 7]·9H 2O

NASA Astrophysics Data System (ADS)

Berrah, F.; Guesdon, A.; Leclaire, A.; Borel, M. M.; Provost, J.; Raveau, B.

1999-12-01

A V(IV) hydroxyhydrogenomonophosphate HK4[V10O10(H2O)2(OH)4(PO4)7]·9H2O has been obtained, using hydrothermal conditions. Its structure, closely related to that of (CH3)2NH2K4[V10O10(H2O)2(OH)4(PO4)7]·4H2O, differs from the latter by its I41/a space group (instead of P43). This difference corresponds to a "disordering" of the vanadium atoms, with respect to the dimethyl ammonium phase. It is shown that this disorder, which appears in the form of "V5O22" units distributed at random, does not affect the oxygen framework. The analysis of this complex structure shows that it can be described from the stacking along c of [V8P7O38(OH)4(H2O)2]∞ layers interconnected through layers of isolated VO6 octahedra. In this structure, built up of VO6, VO5OH, and VO4(OH)(H2O) octahedra, of VO4OH pyramids, and of PO4 tetrahedra, large "toffee" tunnels and smaller ones with a tulip-shape section are running along a (or b). The first ones are stuffed with H2O molecules forming aquo tubes, where protons are likely "delocalized," whereas the second ones are occupied by K+ cations.

Quantum tunneling with friction

NASA Astrophysics Data System (ADS)

Tokieda, M.; Hagino, K.

2017-05-01

Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.

Vapor-screen flow-visualization experiments in the NASA Langley 0.3-m transonic cryogenic tunnel

NASA Technical Reports Server (NTRS)

Selby, G. V.

1986-01-01

The vortical flow on the leeward side of a delta-wing model has been visualized at several different tunnel conditions in the NASA Langley 0.3-Meter Transonic Cryogenic Tunnel using a vapor-screen flow-visualization technique. Vapor-screen photographs of the subject flow field are presented and interpreted relative to phenomenological implications. Results indicate that the use of nitrogen fog in conjunction with the vapor-screen technique is feasibile.

Petrology and geochemistry of samples from bed-contact zones in Tunnel Bed 5, U12g-Tunnel, Nevada Test Site

DOE Office of Scientific and Technical Information (OSTI.GOV)

Connolly, J.R.; Keil, K.; Mansker, W.L.

1984-10-01

This report summarizes the detailed geologic characterization of samples of bed-contact zones and surrounding nonwelded bedded tuffs, both within Tunnel Bed 5, that are exposed in the G-Tunnel complex beneath Rainier Mesa on the Nevada Test Site (NTS). Original planning studies treated the bed-contact zones in Tunnel Bed 5 as simple planar surfaces of relatively high permeability. Detailed characterization, however, indicates that these zones have a finite thickness, are depositional in origin, vary considerably over short vertical and horizontal distances, and are internally complex. Fluid flow in a sequence of nonwelded zeolitized ash-flow or bedded tuffs and thin intervening reworkedmore » zones appears to be a porous-medium phenomenon, regardless of the presence of layering. There are no consistent differences in either bulk composition or detailed mineralogy between bedded tuffs and bed-contact zones in Tunnel Bed 5. Although the original bulk composition of Tunnel Bed 5 was probably peralkaline, extensive zeolitization has resulted in a present peraluminous bulk composition of both bedded tuffs and bed-contact zones. The major zeolite present, clinoptilolite, is intermediate (Ca:K:Na = 26:35:39) and effectively uniform in composition. This composition is similar to that of clinoptilolite from the tuffaceous beds of Calico Hills above the static water level in hole USW G-1, but somewhat different from that reported for zeolites from below the static water level in USW G-2. Tunnel Bed 5 also contains abundant hydrous manganese oxides. The similarity in composition of the clinoptilolites from Tunnel Bed 5 and those above the static water level at Yucca Mountain indicates that many of the results of nuclide-migration experiments in Tunnel Bed 5 would be transferrable to zeolitized nonwelded tuffs above the static water level at Yucca Mountain.« less

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

PubMed

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Dry deposition profile of small particles within a model spruce canopy.

PubMed

Ould-Dada, Zitouni

2002-03-08

Data on dry deposition of 0.82 microm MMAD uranium particles to a small scale, 'model' Norway spruce (Picea abies) canopy have been determined by means of wind tunnel experiments. These are presented for both the total canopy and for five horizontal layers within the canopy. The results show a complex pattern of deposition within the canopy. The highest deposition velocity Vg (0.19 cm s(-1)) was recorded for the topmost layer within the canopy (i.e. the layer in direct contact with the boundary layer) whereas the lowest Vg (0.02 cm s(-1)) occurred at the soil surface. Vertical penetration of depositing aerosol through the canopy was influenced by variations in biomass, wind velocity and turbulence within the canopy. A total canopy Vg of 0.5 cm s(-1) was obtained and this is in line with field measurements of Vg reported in literature for both anthropogenic and radionuclide aerosols of similar size ranges. Extrapolation of wind tunnel data to 'real' forest canopies is discussed. The information presented here is of importance in predicting the likely contribution of dry deposition of aerosols to pollutant inputs to forest ecosystems, particularly in the context of radioactive aerosol releases from nuclear installations. The application of the present data may also be appropriate for other pollutant aerosols such as SO4, NO3 and NH4, which are characterised by particle sizes in the range used in this study.

Conduction Mechanisms in Multiferroic Multilayer BaTiO3/NiFe2O4/BaTiO3 Memristors

NASA Astrophysics Data System (ADS)

Samardzic, N.; Bajac, B.; Srdic, V. V.; Stojanovic, G. M.

2017-10-01

Memristive devices and materials are extensively studied as they offer diverse properties and applications in digital, analog and bio-inspired circuits. In this paper, we present an important class of memristors, multiferroic memristors, which are composed of multiferroic multilayer BaTiO3/NiFe2O4/BaTiO3 thin films, fabricated by a spin-coating deposition technique on platinized Si wafers. This cost-effective device shows symmetric and reproducible current-voltage characteristics for the actuating voltage amplitude of ±10 V. The origin of the conduction mechanism was investigated by measuring the electrical response in different voltage and temperature conditions. The results indicate the existence of two mechanisms: thermionic emission and Fowler-Nordheim tunnelling, which alternate with actuating voltage amplitude and operating temperature.

Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

NASA Astrophysics Data System (ADS)

Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2017-06-01

We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap EG,eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced EG,eff. Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85Bi0.15/GaAs0.92N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher ION compared to InAs and In0.53Ga0.47As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET.

Experiences in improving the state of the practice in verification and validation of knowledge-based systems

NASA Technical Reports Server (NTRS)

Culbert, Chris; French, Scott W.; Hamilton, David

1994-01-01

Knowledge-based systems (KBS's) are in general use in a wide variety of domains, both commercial and government. As reliance on these types of systems grows, the need to assess their quality and validity reaches critical importance. As with any software, the reliability of a KBS can be directly attributed to the application of disciplined programming and testing practices throughout the development life-cycle. However, there are some essential differences between conventional software and KBSs, both in construction and use. The identification of these differences affect the verification and validation (V&V) process and the development of techniques to handle them. The recognition of these differences is the basis of considerable on-going research in this field. For the past three years IBM (Federal Systems Company - Houston) and the Software Technology Branch (STB) of NASA/Johnson Space Center have been working to improve the 'state of the practice' in V&V of Knowledge-based systems. This work was motivated by the need to maintain NASA's ability to produce high quality software while taking advantage of new KBS technology. To date, the primary accomplishment has been the development and teaching of a four-day workshop on KBS V&V. With the hope of improving the impact of these workshops, we also worked directly with NASA KBS projects to employ concepts taught in the workshop. This paper describes two projects that were part of this effort. In addition to describing each project, this paper describes problems encountered and solutions proposed in each case, with particular emphasis on implications for transferring KBS V&V technology beyond the NASA domain.

Introduction to cryogenic wind tunnels

NASA Technical Reports Server (NTRS)

Goodyer, M. J.

1985-01-01

The background to the evolution of the cryogenic wind tunnel is outlined, with particular reference to the late 60's/early 70's when efforts were begun to re-equip with larger wind tunnels. The problems of providing full scale Reynolds numbers in transonic testing were proving particularly intractible, when the notion of satisfying the needs with the cryogenic tunnel was proposed, and then adopted. The principles and advantages of the cryogenic tunnel are outlined, along with guidance on the coolant needs when this is liquid nitrogen, and with a note on energy recovery. Operational features of the tunnels are introduced with reference to a small low speed tunnel. Finally the outstanding contributions are highlighted of the 0.3-Meter Transonic Cryogenic Tunnel (TCT) at NASA Langley Research Center, and its personnel, to the furtherance of knowledge and confidence in the concept.

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

NASA Astrophysics Data System (ADS)

Akyol, Fatih; Zhang, Yuewei; Krishnamoorthy, Sriram; Rajan, Siddharth

2017-12-01

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm2 and a differential resistance of 6.51 × 10-5 Ω·cm2 at 3 kA/cm2 were obtained. The tunnel junction design with n++-GaN (Si: 5 × 1020 cm-3)/3 nm p++-In0.12Ga0.88N (Mg: 1.5 × 1020 cm-3)/p++-GaN (Mg: 5 × 1020 cm-3) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.

Scanning tunneling spectroscopy of molecular thin films and semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Gaan, Sandeep

Work presented in this thesis mostly deals with nano-scale study of electronic properties of organic semiconducting molecules using pentacene (Pn) as a model system and compared with various SiC surfaces to gain more insight into physical processes at nano-scale. In addition, InAs quantum dots (QDs) in a GaAs matrix are studied to probe electronic states of individual QDs. Scanning tunneling microscopy (STM) and spectroscopy (STS) are the primary experimental techniques used to probe local electronic properties on the nano-scale. Vacuum sublimated Pn thin films were deposited onto SiC substrates for STM/STS experiments. STM studies show high quality ordered Pn films. Atomic force microscopy (AFM) images reveal dendritic growth pattern of these films. Local density of states (LDOS) measurements using STS reveals a HOMO-LUMO bandgap. In order to study charge transport properties of Pn films, different amount of charge were injected into the sample by systematically changing the tip-sample separation. Saturation of the tunnel current was observed at positive sample voltages (LUMO states). This effect was attributed to a transport/space charge limitation in tunnel current by treating it as a situation analogous to charge injection into insulators which gives rise to space charge limited current (also previously observed in the case of organic semiconductors). Using a simple model we were able to derive a hopping rate that characterizes nano-scale transport in Pn films at least in the vicinity of the STM probe-tip. We have studied effect of transport limitation in the tunnel current for various semiconductor surfaces. In order to probe surfaces of varying conductivities, we have used Si-rich SiC surfaces such as 3x3 and 3x3 -R30° (both Mott-Hubbard insulators) as well as a highly conducting C-rich graphene surface, and compared those results with the data obtained from Pn. We observe variation of the decay constant kappa (which characterizes the tunneling process) on

I-V characteristics of graphene nanoribbon/h-BN heterojunctions and resonant tunneling.

PubMed

Wakai, Taiga; Sakamoto, Shoichi; Tomiya, Mitsuyoshi

2018-07-04

We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction (GS/h-BN) and 11-armchair graphene nanoribbon/h-BN heterojunction (11-AGNR/h-BN), which are carried out using the density functional theory (DFT) method and the non-equilibrium Green's function (NEGF) technique. Since 11-AGNR belongs to the conductive (3n-1)-family of AGNR, both are metallic nanomaterials with two transverse arrays of h-BN, which is a wide-gap semi-conductor. The two h-BN arrays act as double barriers. The transmission functions (TF) and I-[Formula: see text] characteristics of GS/h-BN and 11-AGNR/h-BN are calculated by DFT and NEGF, and they show that quantum double barrier tunneling occurs. The TF becomes very spiky in both materials, and it leads to step-wise I-[Formula: see text] characteristics rather than negative resistance, which is the typical behavior of double barriers in semiconductors. The results of our first principle calculations are also compared with 1D Dirac equation model for the double barrier system. The model explains most of the peaks of the transmission functions nearby the Fermi energy quite well. They are due to quantum tunneling.

Operating envelope charts for the Langley 0.3-meter transonic cryogenic wind tunnel

NASA Technical Reports Server (NTRS)

Rallo, R. A.; Dress, D. A.; Siegle, H. J. A.

1986-01-01

To take full advantage of the unique Reynolds number capabilities of the 0.3-meter Transonic Cryogenic Tunnel (0.3-m TCT) at the NASA Langley Research Center, it was designed to accommodate test sections other than the original, octagonal, three-dimensional test section. A 20- by 60-cm two-dimensional test section was installed in 1976 and was extensively used, primarily for airfoil testing, through the fall of 1984. The tunnel was inactive during 1985 so that a new test section and improved high speed diffuser could be installed in the tunnel circuit. The new test section has solid adaptive top and bottom walls to reduce or eliminate wall interference for two-dimensional testing. The test section is 33- by 33-cm in cross section at the entrance and is 142 cm long. In the planning and running of past airfoil tests in the 0.3-m TCT, the use of operating envelope charts have proven very useful. These charts give the variation of total temperature and pressure with Mach number and Reynolds number. The operating total temperature range of the 0.3-m TCT is from about 78 K to 327 K with total pressures ranging from about 17.5 psia to 88 psia. This report presents the operating envelope charts for the 0.3-m TCT with the adaptive wall tes t section installed. They were all generated based on a 1-foot chord model. The Mach numbers vary from 0.1 to 0.95.

Rudolf Hermann, wind tunnels and aerodynamics

NASA Astrophysics Data System (ADS)

Lundquist, Charles A.; Coleman, Anne M.

2008-04-01

Rudolf Hermann was born on December 15, 1904 in Leipzig, Germany. He studied at the University of Leipzig and at the Aachen Institute of Technology. His involvement with wind tunnels began in 1934 when Professor Carl Wieselsberger engaged him to work at Aachen on the development of a supersonic wind tunnel. On January 6, 1936, Dr. Wernher von Braun visited Dr. Hermann to arrange for use of the Aachen supersonic wind tunnel for Army problems. On April 1, 1937, Dr. Hermann became Director of the Supersonic Wind Tunnel at the Army installation at Peenemunde. Results from the Aachen and Peenemunde wind tunnels were crucial in achieving aerodynamic stability for the A-4 rocket, later designated as the V-2. Plans to build a Mach 10 'hypersonic' wind tunnel facility at Kochel were accelerated after the Allied air raid on Peenemunde on August 17, 1943. Dr. Hermann was director of the new facility. Ignoring destruction orders from Hitler as WWII approached an end in Europe, Dr. Hermann and his associates hid documents and preserved wind tunnel components that were acquired by the advancing American forces. Dr. Hermann became a consultant to the Air Force at its Wright Field in November 1945. In 1951, he was named professor of Aeronautical Engineering at the University of Minnesota. In 1962, Dr. Hermann became the first Director of the Research Institute at the University of Alabama in Huntsville (UAH), a position he held until he retired in 1970.

Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition

NASA Astrophysics Data System (ADS)

Wakabayashi, Ryo; Hattori, Mai; Yoshimatsu, Kohei; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

2018-06-01

High-quality β-(AlxGa1-x)2O3 (x = 0-0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1-x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band.

Volume and contact surface area analysis of bony tunnels in single and double bundle anterior cruciate ligament reconstruction using autograft tendons: in vivo three-dimensional imaging analysis.

PubMed

Yang, Jae-Hyuk; Chang, Minho; Kwak, Dai-Soon; Wang, Joon Ho

2014-09-01

Regarding reconstruction surgery of the anterior cruciate ligament (ACL), there is still a debate whether to perform a single bundle (SB) or double bundle (DB) reconstruction. The purpose of this study was to analyze and compare the volume and surface area of femoral and tibial tunnels during transtibial SB versus transportal DB ACL reconstruction. A consecutive series of 26 patients who underwent trantibial SB ACL reconstruction and 27 patients with transportal DB ACL reconstruction using hamstring autograft from January 2010 to October 2010 were included in this study. Three-dimensional computed tomography (3D-CT) was taken within one week after operation. The CT bone images were segmented with use of Mimics software v14.0. The obtained digital images were then imported in the commercial package Geomagic Studio v10.0 and SketchUp Pro v8.0 for processing. The femoral and tibial tunnel lengths, diameters, volumes and surface areas were evaluated. A comparison between the two groups was performed using the independent-samples t-test. A p-value less than the significance value of 5% (p < 0.05) was considered statistically significant. Regarding femur tunnels, a significant difference was not found between the tunnel volume for SB technique (1,496.51 ± 396.72 mm(3)) and the total tunnel volume for DB technique (1,593.81 ± 469.42 mm(3); p = 0.366). However, the total surface area for femoral tunnels was larger in DB technique (919.65 ± 201.79 mm(2)) compared to SB technique (810.02 ± 117.98 mm(2); p = 0.004). For tibia tunnels, there was a significant difference between tunnel volume for the SB technique (2,070.43 ± 565.07 mm(3)) and the total tunnel volume for the DB technique (2,681.93 ± 668.09 mm(3); p ≤ 0.001). The tibial tunnel surface area for the SB technique (958.84 ± 147.50 mm(2)) was smaller than the total tunnel surface area for the DB technique (1,493.31 ± 220.79 mm(2); p ≤ 0.001). Although the total femoral tunnel volume was similar between two

Pioneering Russian wind tunnels and first experimental investigations, 1871-1915

NASA Astrophysics Data System (ADS)

Gorbushin, A. R.

2017-11-01

A review of foreign and Russian sources is given mentioning the pioneering wind tunnels built in Russia at the turn of 19th and 20th centuries. The first wind tunnel in Russia was constructed by V.A. Pashkevich at the Mikhailovsky Artillery Academy in St. Petersburg in 1871. In total from 1871 through 1915, 18 wind tunnels were constructed in Russia: 11 in Moscow, 5 in St. Petersburg and 2 in Kaluga. An overview of the pioneering Russian wind tunnels built by V.A. Pashkevich, K.E. Tsiolkovsky, prof. N.E. Zhukovsky, D.P. Ryabushinsky and prof. K.P. Boklevsky is given. Schemes, photographs, formulas, description of the research and test results taken from the original papers published by the wind tunnel designers are given. Photographs from the N.E. Zhukovsky Scientific and Memorial Museum and the Archive of the Russian Academy of Sciences are used in the article. Methods of flow visualization and results of their application are presented. The Russian scientists and researchers' contribution to the development of techniques and methods of aerodynamic experiment is shown, including one of the most important aspects - the wall interference problem.

Use of versican variant V3 and versican antisense expression to engineer cultured human skin containing increased content of insoluble elastin.

PubMed

Merrilees, Mervyn J; Falk, Ben A; Zuo, Ning; Dickinson, Michelle E; May, Barnaby C H; Wight, Thomas N

2017-01-01

Skin substitutes for repair of dermal wounds are deficient in functional elastic fibres. We report that the content of insoluble elastin in the dermis of cultured human skin can be increased though the use of two approaches that enhance elastogenesis by dermal fibroblasts, forced expression of versican variant V3, which lacks glycosaminoglycan (GAG) chains, and forced expression of versican antisense to decrease levels of versican variant V1 with GAG chains. Human dermal fibroblasts transduced with V3 or anti-versican were cultured under standard conditions over a period of 4 weeks to produce dermal sheets, with growth enhanced though multiple seedings for the first 3 weeks. Human keratinocytes, cultured in supplemented media, were added to the 4-week dermal sheets and the skin layer cultured for a further week. At 5 weeks, keratinocytes were multilayered and differentiated, with desmosome junctions thoughout and keratin deposits in the upper squamous layers. The dermal layer was composed of layered fibroblasts surrounded by extracellular matrix of collagen bundles and, in control cultures, small scattered elastin deposits. Forced expression of V3 and versican antisense slowed growth, decreased versican V1 expression, increased tropoelastin expression and/or the deposition of large aggregates of insoluble elastin in the dermal layer, and increased tissue stiffness, as measured by nano-indentation. Skin sheets were also cultured on Endoform Dermal Template™, the biodegradable wound dressing made from the lamina propria of sheep foregut. Skin structure and the enhanced deposition of elastin by forced expression of V3 and anti-versican were preserved on this supportive substrate. Copyright © 2014 John Wiley & Sons, Ltd. Copyright © 2014 John Wiley & Sons, Ltd.

3D Tomography of a Mesa Using Cosmic Ray Muons Detected in an Underground Tunnel

NASA Astrophysics Data System (ADS)

Guardincerri, E.; Rowe, C. A.

2016-12-01

The LANL Mini Muon Tracker (MMT) is a muon tracking detector made of sealed aluminum drift tubes. The MMT was operated at four locations inside a tunnel under the Los Alamos town site mesa between November 2015 and February 2016 and it collected cosmic ray muons attenuated by the tunnel overburden. The data were analyzed and used to obtain a 3D tomographic image of the mesa and will be later combined with gravity data collected around the same location. We describe here the muon data taking and their analysis, and we show the resulting 3D image.

Post-operative 3D CT feedback improves accuracy and precision in the learning curve of anatomic ACL femoral tunnel placement.

PubMed

Sirleo, Luigi; Innocenti, Massimo; Innocenti, Matteo; Civinini, Roberto; Carulli, Christian; Matassi, Fabrizio

2018-02-01

To evaluate the feedback from post-operative three-dimensional computed tomography (3D-CT) on femoral tunnel placement in the learning process, to obtain an anatomic anterior cruciate ligament (ACL) reconstruction. A series of 60 consecutive patients undergoing primary ACL reconstruction using autologous hamstrings single-bundle outside-in technique were prospectively included in the study. ACL reconstructions were performed by the same trainee-surgeon during his learning phase of anatomic ACL femoral tunnel placement. A CT scan with dedicated tunnel study was performed in all patients within 48 h after surgery. The data obtained from the CT scan were processed into a three-dimensional surface model, and a true medial view of the lateral femoral condyle was used for the femoral tunnel placement analysis. Two independent examiners analysed the tunnel placements. The centre of femoral tunnel was measured using a quadrant method as described by Bernard and Hertel. The coordinates measured were compared with anatomic coordinates values described in the literature [deep-to-shallow distance (X-axis) 28.5%; high-to-low distance (Y-axis) 35.2%]. Tunnel placement was evaluated in terms of accuracy and precision. After each ACL reconstruction, results were shown to the surgeon to receive an instant feedback in order to achieve accurate correction and improve tunnel placement for the next surgery. Complications and arthroscopic time were also recorded. Results were divided into three consecutive series (1, 2, 3) of 20 patients each. A trend to placing femoral tunnel slightly shallow in deep-to-shallow distance and slightly high in high-to-low distance was observed in the first and the second series. A progressive improvement in tunnel position was recorded from the first to second series and from the second to the third series. Both accuracy (+52.4%) and precision (+55.7%) increased from the first to the third series (p < 0.001). Arthroscopic time decreased from a mean of

Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

PubMed Central

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

Resonant tunneling modulation in quasi-2D Cu(2)O/SnO(2) p-n horizontal-multi-layer heterostructure for room temperature H(2)S sensor application.

PubMed

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu(2)O/SnO(2) p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu(2)O and SnO(2) selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H(2)S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing.

Description of the insulation system for the Langley 0.3-Meter Transonic Cryogenic Tunnel

NASA Technical Reports Server (NTRS)

Lawing, P. L.; Dress, D. A.; Kilgore, R. A.

1985-01-01

The thermal insulation system of the Langley 0.3 Meter Transonic Cryogenic Tunnel is described. The insulation system is designed to operate from room temperature down to about 77.4 K, the temperature of liquid nitrogen at 1 atmosphere. A detailed description is given of the primary insulation sytem consists of glass fiber mats, a three part vapor barrier, and a dry positive pressure purge system. Also described are several secondary insulation systems required for the test section, actuators, and tunnel supports. An appendix briefly describes the original insulation system which is considered inferior to the one presently in place. The time required for opening and closing portions of the insulation system for modification or repair to the tunnel has been reduced, typically, from a few days for the original thermal insulating system to a few hours for the present system.

Electron tunneling and the energy gap in Bi2Sr2CaCu2Ox

NASA Astrophysics Data System (ADS)

Lee, Mark; Mitzi, D. B.; Kapitulnik, A.; Beasley, M. R.

1989-01-01

Results of electron tunneling on single crystals of the Bi2Sr2CaCu2Ox superconductor are reported. The junctions show a gap structure with Δ~=25 meV, whose temperature dependence exhibits a qualitatively Bardeen-Cooper-Schrieffer-like behavior with a gap-closing Tc~=81-85 K. Comparisons of these tunneling spectra to those obtained on YBa2Cu3O7-x are made. Evidence that 2Δ/kTc~7 for both Ba2Sr2CaCu2Ox and YBa2Cu3O7-x is also discussed.

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Martin, D.; Grandjean, N.

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10{sup 20 }cm{sup −3}, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10{sup −5} A cm{sup −2} at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm{sup −2} and 2000 A cm{sup −2}, respectively. The specific series resistance of the whole device ismore » 3.7 × 10{sup −4} Ω cm{sup 2}. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge.« less

Discrete random distribution of source dopants in nanowire tunnel transistors (TFETs)

NASA Astrophysics Data System (ADS)

Sylvia, Somaia; Abul Khayer, M.; Alam, Khairul; Park, Hong-Hyun; Klimeck, Gerhard; Lake, Roger

2013-03-01

InAs and InSb nanowire (NW) tunnel field effect transistors (TFETs) require highly degenerate source doping to support the high electric fields in the tunnel region. For a target on-current of 1 μA , the doping requirement may be as high as 1 . 5 ×1020cm-3 in a NW with diameter as low as 4 nm. The small size of these devices demand that the dopants near tunneling region be treated discretely. Therefore, the effects resulting from the random distribution of dopant atoms in the source of a TFET are studied for 30 test devices. Comparing with the transfer characteristics of the same device simulated with a continuum doping model, our results show (1) a spread of I - V toward the positive gate voltage axis, (2) the same average threshold voltage, (3) an average 62% reduction in the on current, and (4) a slight degradation of the subthreshold slope. Random fluctuations in both the number and placement of dopants will be discussed. Also, as the channel length is scaled down, direct tunneling through the channel starts limiting the device performance. Therefore, a comparison of materials is also performed, showing their ability to block direct tunneling for sub-10 nm channel FETs and TFETs. This work was supported in part by the Center on Functional Engineered Nano Architectonics and the Materials, Structures and Devices Focus Center, under the Focus Center Research Program, and by the National Science Foundation under Grant OCI-0749140

Torsion-inversion tunneling patterns in the CH-stretch vibrationally excited states of the G12 family of molecules including methylamine.

PubMed

Dawadi, Mahesh B; Bhatta, Ram S; Perry, David S

2013-12-19

Two torsion-inversion tunneling models (models I and II) are reported for the CH-stretch vibrationally excited states in the G12 family of molecules. The torsion and inversion tunneling parameters, h(2v) and h(3v), respectively, are combined with low-order coupling terms involving the CH-stretch vibrations. Model I is a group theoretical treatment starting from the symmetric rotor methyl CH-stretch vibrations; model II is an internal coordinate model including the local-local CH-stretch coupling. Each model yields predicted torsion-inversion tunneling patterns of the four symmetry species, A, B, E1, and E2, in the CH-stretch excited states. Although the predicted tunneling patterns for the symmetric CH-stretch excited state are the same as for the ground state, inverted tunneling patterns are predicted for the asymmetric CH-stretches. The qualitative tunneling patterns predicted are independent of the model type and of the particular coupling terms considered. In model I, the magnitudes of the tunneling splittings in the two asymmetric CH-stretch excited states are equal to half of that in the ground state, but in model II, they differ when the tunneling rate is fast. The model predictions are compared across the series of molecules methanol, methylamine, 2-methylmalonaldehyde, and 5-methyltropolone and to the available experimental data.

Heavy-Atom Tunneling Calculations in Thirteen Organic Reactions: Tunneling Contributions are Substantial, and Bell's Formula Closely Approximates Multidimensional Tunneling at ≥250 K.

PubMed

Doubleday, Charles; Armas, Randy; Walker, Dana; Cosgriff, Christopher V; Greer, Edyta M

2017-10-09

Multidimensional tunneling calculations are carried out for 13 reactions, to test the scope of heavy-atom tunneling in organic chemistry, and to check the accuracy of one-dimensional tunneling models. The reactions include pericyclic, cycloaromatization, radical cyclization and ring opening, and S N 2. When compared at the temperatures that give the same effective rate constant of 3×10 -5  s -1 , tunneling accounts for 25-95 % of the rate in 8 of the 13 reactions. Values of transmission coefficients predicted by Bell's formula, κ Bell  , agree well with multidimensional tunneling (canonical variational transition state theory with small curvature tunneling), κ SCT . Mean unsigned deviations of κ Bell vs. κ SCT are 0.08, 0.04, 0.02 at 250, 300 and 400 K. This suggests that κ Bell is a useful first choice for predicting transmission coefficients in heavy-atom tunnelling. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Study on the Rectification Property of Self-Assembled Viologen Single Molecules Using a Scanning Tunneling Microscopy.

PubMed

Lee, Nam-Suk; Shin, Hoon-Kyu; Kwon, Young-Soo

2015-02-01

An ultrahigh vacuum scanning tunneling microscopy (UHV-STM) and a scanning tunneling spectroscopy (STS) are used measure the rectification property of self-assembled viologen single molecules (VC8SH, VC10SH, HSC8VC8SH, and HSC10VC10SH) in the previous study. Using STM we observe viologen single molecules in the self-assembled octanethiol (OT) SAM matrix. In the OT matrix a mixed phase that includes a c(4 x 2) superlattice of high-density standing up-phase is observed. We indicate high peak current-like rectifications at + 1.68 V(VC8SH), + 1.56 V(VC10SH), + 1.14 V(HSC8VC8SH), and + 1.04 V(HSC10VC10SH) based on the experiment implemented in this study. In addition, transition voltages (Vtrans) from direct tunneling to the Fowler-Nordheim tunneling are presented at 1.08 V(VC8SH), 0.97 V(VC10SH), 0.99 V(HSC8VC8SH), and 0.89 V(HSC1VC1SH).

Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

PubMed

Bessire, Cedric D; Björk, Mikael T; Schmid, Heinz; Schenk, Andreas; Reuter, Kathleen B; Riel, Heike

2011-10-12

We report on the electrical characterization of one-sided p(+)-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process occurring in this highly lattice mismatched material system. The lattice mismatch gives rise to dislocations at the interface as confirmed by electron microscopy. Despite this, a negative differential resistance with peak-to-valley current ratios of up to 2.4 at room temperature and with large current densities is observed, attesting to the very abrupt and high-quality interface. The presence of dislocations and other defects that increase the excess current is evident in the first and second derivative of the I-V characteristics as distinct peaks arising from trap-and phonon-assisted tunneling via the corresponding defect levels. We observe this assisted tunneling mainly in the forward direction and at low reverse bias but not at higher reverse biases because the band-to-band generation rates are peaked in the InAs, which is also confirmed by modeling. This indicates that most of the peaks are due to dislocations and defects in the immediate vicinity of the interface. Finally, we also demonstrate that these devices are very sensitive to electrical stress, in particular at room temperature, because of the extremely high electrical fields obtained at the abrupt junction even at low bias. The electrical stress induces additional defect levels in the band gap, which reduce the peak-to-valley current ratios.

Synthesis and electrochemical sodium and lithium insertion properties of sodium titanium oxide with the tunnel type structure

NASA Astrophysics Data System (ADS)

Kataoka, Kunimitsu; Akimoto, Junji

2016-02-01

Polycrystalline sample of sodium titanium oxide Na2Ti4O9 with the tunnel-type structure was prepared by topotactic sodium extraction in air atmosphere from the as prepared Na3Ti4O9 sample. The starting Na3Ti4O9 compound was synthesized by solid state reaction at 1273 K in Ar atmosphere. The completeness of oxidation reaction from Na3Ti4O9 to Na2Ti4O9 was monitored by the change in color from dark blue to white, and was also confirmed by the Rietveld refinement using the powder X-ray diffraction data. The sodium deficient Na2Ti4O9 maintained the original Na2.08Ti4O9-type tunnel structure and had the monoclinic crystal system, space group C2/m, and the lattice parameters of a = 23.1698(3) Å, b = 2.9406(1) Å, c = 10.6038(2) Å, β = 102.422(3)°, and V = 705.57(2) Å3. The electrochemical measurements of thus obtained Na2Ti4O9 sample showed the reversible sodium insertion and extraction reactions at 1.1 V, 1.5 V, and 1.8 V vs. Na/Na+, and reversible lithium insertion and extraction reactions at around 1.4 V, 1.8 V, and 2.0 V vs. Li/Li+. The reversible capacity for the lithium cell was achieved to be 104 mAh g-1 at the 100th cycle.

Structural evolution of tunneling oxide passivating contact upon thermal annealing.

PubMed

Choi, Sungjin; Min, Kwan Hong; Jeong, Myeong Sang; Lee, Jeong In; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan; Kim, Ka-Hyun

2017-10-16

We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The evolution of doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by thermal annealing was accompanied with significant structural changes. Annealing at 600 °C for one minute introduced an increase in the implied open circuit voltage (V oc ) due to the hydrogen motion, but the implied V oc decreased again at 600 °C for five minutes. At annealing temperature above 800 °C, a-Si:H crystallized and formed poly-Si and thickness of tunneling oxide slightly decreased. The thickness of the interface tunneling oxide gradually decreased and the pinholes are formed through the tunneling oxide at a higher annealing temperature up to 1000 °C, which introduced the deteriorated carrier selectivity of the TOPCon structure. Our results indicate a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunneling oxide upon thermal annealing. Our result suggests that there is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm.

A compact sub-Kelvin ultrahigh vacuum scanning tunneling microscope with high energy resolution and high stability.

PubMed

Zhang, L; Miyamachi, T; Tomanić, T; Dehm, R; Wulfhekel, W

2011-10-01

We designed a scanning tunneling microscope working at sub-Kelvin temperatures in ultrahigh vacuum (UHV) in order to study the magnetic properties on the nanoscale. An entirely homebuilt three-stage cryostat is used to cool down the microscope head. The first stage is cooled with liquid nitrogen, the second stage with liquid (4)He. The third stage uses a closed-cycle Joule-Thomson refrigerator of a cooling power of 1 mW. A base temperature of 930 mK at the microscope head was achieved using expansion of (4)He, which can be reduced to ≈400 mK when using (3)He. The cryostat has a low liquid helium consumption of only 38 ml/h and standing times of up to 280 h. The fast cooling down of the samples (3 h) guarantees high sample throughput. Test experiments with a superconducting tip show a high energy resolution of 0.3 meV when performing scanning tunneling spectroscopy. The vertical stability of the tunnel junction is well below 1 pm (peak to peak) and the electric noise floor of tunneling current is about 6fA/√Hz. Atomic resolution with a tunneling current of 1 pA and 1 mV was achieved on Au(111). The lateral drift of the microscope at stable temperature is below 20 pm/h. A superconducting spilt-coil magnet allows to apply an out-of-plane magnetic field of up to 3 T at the sample surface. The flux vortices of a Nb(110) sample were clearly resolved in a map of differential conductance at 1.1 K and a magnetic field of 0.21 T. The setup is designed for in situ preparation of tip and samples under UHV condition.

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

NASA Astrophysics Data System (ADS)

Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

2018-01-01

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Femoral graft-tunnel angles in posterior cruciate ligament reconstruction: analysis with 3-dimensional models and cadaveric experiments.

PubMed

Kim, Sung-Jae; Chun, Yong-Min; Kim, Sung-Hwan; Moon, Hong-Kyo; Jang, Jae-Won

2013-07-01

The purpose of this study was to compare four graft-tunnel angles (GTA), the femoral GTA formed by three different femoral tunneling techniques (the outside-in, a modified inside-out technique in the posterior sag position with knee hyperflexion, and the conventional inside-out technique) and the tibia GTA in 3-dimensional (3D) knee flexion models, as well as to examine the influence of femoral tunneling techniques on the contact pressure between the intra-articular aperture of the femoral tunnel and the graft. Twelve cadaveric knees were tested. Computed tomography scans were performed at different knee flexion angles (0°, 45°, 90°, and 120°). Femoral and tibial GTAs were measured at different knee flexion angles on the 3D knee models. Using pressure sensitive films, stress on the graft of the angulation of the femoral tunnel aperture was measured in posterior cruciate ligament reconstructed cadaveric knees. Between 45° and 120° of knee flexion, there were no significant differences between the outside-in and modified inside-out techniques. However, the femoral GTA for the conventional inside-out technique was significantly less than that for the other two techniques (p<0.001). In cadaveric experiments using pressure-sensitive film, the maximum contact pressure for the modified inside-out and outside-in technique was significantly lower than that for the conventional inside-out technique (p=0.024 and p=0.017). The conventional inside-out technique results in a significantly lesser GTA and higher stress at the intra-articular aperture of the femoral tunnel than the outside-in technique. However, the results for the modified inside-out technique are similar to those for the outside-in technique.

Assessment of electrical resistivity imaging for pre-tunneling geological characterization - A case study of the Qingdao R3 metro line tunnel

NASA Astrophysics Data System (ADS)

Li, Shucai; Xu, Shan; Nie, Lichao; Liu, Bin; Liu, Rentai; Zhang, Qingsong; Zhao, Yan; Liu, Quanwei; Wang, Houtong; Liu, Haidong; Guo, Qin

2018-06-01

Water inrush during tunneling is a significant problem in the underground infrastructure construction. Electrical resistivity imaging (ERI) is a technique that can detect and characterize a water body in an open fracture or fault by exploiting the resistivity contrast that exists between the water body and the surrounding materials. ERI is an efficient method for pre-tunneling geological characterization. In this study, a case study is presented in which tunnel-face and borehole ERI (TBERI) is performed by using the probe hole to detect a water body during tunnel construction. The construction site is a metro line site, situated in the city of Qingdao, China. Unlike the traditional cross-hole observation mode, TBERI only use a single borehole. The installation of injection electrodes inside the probe hole and the installation of measuring electrodes on the tunnel face is proposed as the observation mode. Furthermore, a numerical simulation is carried out before the real field experiment, and the simulation results show that the TBERI is capable of detecting a deeply buried water body. In addition, the water body in the field case is also identified by TBERI. The water body appears as a strongly conductive anomaly relative to the background materials. This study highlights the respective strengths and weaknesses of the TBERI for pre-tunneling geological characterization. This method is a relatively rapid means of investigating the studied area. This study clearly demonstrates the suitability of TBERI in a tunneling scenario.

Accuracy Assessment of a Canal-Tunnel 3d Model by Comparing Photogrammetry and Laserscanning Recording Techniques

NASA Astrophysics Data System (ADS)

Charbonnier, P.; Chavant, P.; Foucher, P.; Muzet, V.; Prybyla, D.; Perrin, T.; Grussenmeyer, P.; Guillemin, S.

2013-07-01

With recent developments in the field of technology and computer science, conventional methods are being supplanted by laser scanning and digital photogrammetry. These two different surveying techniques generate 3-D models of real world objects or structures. In this paper, we consider the application of terrestrial Laser scanning (TLS) and photogrammetry to the surveying of canal tunnels. The inspection of such structures requires time, safe access, specific processing and professional operators. Therefore, a French partnership proposes to develop a dedicated equipment based on image processing for visual inspection of canal tunnels. A 3D model of the vault and side walls of the tunnel is constructed from images recorded onboard a boat moving inside the tunnel. To assess the accuracy of this photogrammetric model (PM), a reference model is build using static TLS. We here address the problem comparing the resulting point clouds. Difficulties arise because of the highly differentiated acquisition processes, which result in very different point densities. We propose a new tool, designed to compare differences between pairs of point cloud or surfaces (triangulated meshes). Moreover, dealing with huge datasets requires the implementation of appropriate structures and algorithms. Several techniques are presented : point-to-point, cloud-to-cloud and cloud-to-mesh. In addition farthest point resampling, octree structure and Hausdorff distance are adopted and described. Experimental results are shown for a 475 m long canal tunnel located in France.

12 CFR 965.3 - Liquidity reserves for deposits.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 12 Banks and Banking 7 2010-01-01 2010-01-01 false Liquidity reserves for deposits. 965.3 Section 965.3 Banks and Banking FEDERAL HOUSING FINANCE BOARD FEDERAL HOME LOAN BANK LIABILITIES SOURCE OF FUNDS § 965.3 Liquidity reserves for deposits. Each Bank shall at all times have at least an amount...

Resonant tunneling structures based on epitaxial graphene on SiC

NASA Astrophysics Data System (ADS)

Nguyen, V. Hung; Bournel, A.; Dollfus, P.

2011-12-01

Recently some experiments have suggested that graphene epitaxially grown on SiC can exhibit an energy bandgap of 260 meV, which enhances the potential of this material for electronic applications. On this basis, we propose to use spatial doping to generate graphene-on-SiC double-barrier structures. The non-equilibrium Green's function technique for solving the massive Dirac model is applied to highlight typical transport phenomena such as the electron confinement and the resonant tunneling effects. The I-V characteristics of graphene resonant tunneling diodes were then investigated and the effect of different device parameters was discussed. It is finally shown that this kind of double-barrier junction provides an efficient way to confine the charge carriers in graphene and to design graphene resonant tunneling structures.

Current-voltage characteristics and electroresistance in LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 thin film composites.

PubMed

Gadani, Keval; Keshvani, M J; Rajyaguru, Bhargav; Dhruv, Davit; Kataria, B R; Joshi, A D; Asokan, K; Shah, N A; Solanki, P S

2017-11-08

In this communication, we report results of the electrical transport properties across the interface of composites consisting of n-type LaMnO 3-δ (LMO) and p-type La 0.7 Ca 0.3 MnO 3 (LCMO) manganites grown on LaAlO 3 (LAO) single crystalline substrates using low cost wet chemical solution deposition (CSD) and sophisticated, well-controlled dry chemical vapor deposition (CVD) chemical techniques. The XRD ϕ-scan studies reveal the single crystalline nature of both bilayered composites, with parallel epitaxial growth of LMO and LCMO layers onto the LAO substrate. The valence states of Mn ions in both layers of both composites were identified by performing X-ray photoelectron spectroscopy (XPS). The I-V characteristics of the LMO/LCMO interfaces show strong backward diode-like behavior at higher applied voltages well above the crossover voltage (V NB ). Below V NB , the interfaces demonstrate normal diode-like characteristics throughout the studied temperature range. The electric field-induced modulation of the LMO/LCMO junction resistance of the interfaces has been observed. Electric field-dependent electroresistance (ER) modifications at different temperatures have also been studied. The electrical transport properties have been discussed in the context of various mechanisms, such as charge injection, tunneling, depletion region modification and thermal processes across the interface. The effects of structurally and chemically developed sharp interfaces between the LMO and LCMO layers on the transport properties of the presently studied bilayered thin film composites have been discussed on the basis of correlation between the physicochemical characterization and charge transport behavior. A comparison of different aspects of the transport properties has been presented in the context of the structural strain and crystallinity of the composites grown using both wet and dry chemical techniques.

Extreme Field Sensitivity of Magnetic Tunneling in Fe-Doped Li3 N

NASA Astrophysics Data System (ADS)

Fix, M.; Atkinson, J. H.; Canfield, P. C.; del Barco, E.; Jesche, A.

2018-04-01