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Sample records for kondo semiconductor cerhas

  1. Magnetostriction and thermal expansion of the Kondo semiconductor Ce{sub 3}Bi{sub 4}Pt{sub 3}

    SciTech Connect

    Hundley, M.F.; Neumeier, J.J.; Thompson, J.D.; Lacerda, A.; Canfield, P.C.

    1995-05-01

    We report dilatometric thermal expansion ({alpha}) and magnetostriction ({lambda}) measurements on the Kondo semiconductor Ce{sub 3}Bi{sub 4}Pt{sub 3} and its non-magnetic analog La{sub 3}Bi{sub 4}Pt{sub 3} in fields to 100 kOe. The magnetic contribution to the thermal expansion of Ce{sub 3}Bi{sub 4}Pt{sub 3} displays a broad maximum centered at 50 K, close to the temperature where the 4f specific heat is a maximum. The linear magnetostriction is anomalously large in Ce{sub 3}Bi{sub 4}Pt{sub 3}, with values that are characteristic of mixed-valent compounds ({lambda}{sub {perpendicular}} = 3.26x10{sup {minus}5}, {lambda}{sub {parallel}} = -6.24x10{sup {minus}5} in 100 kOe at 4 K). The volume magnetostriction is positive and a factor of ten smaller than the linear coefficients ({lambda}{sub V} = 2.75x10{sup {minus}6} in 100 kOe at 4 K). The volume magnetostriction is temperature-dependent, and peaks at 50 K. The data are considered in terms of a Grueneisen analysis that links the temperature-dependent magnetic susceptibility, thermal expansion, magnetostriction, bulk modulus, and specific heat of Ce{sub 3}Bi{sub 4}Pt{sub 3} via temperature-dependent electronic and magnetic scaling parameters.

  2. Cubic topological Kondo insulators.

    PubMed

    Alexandrov, Victor; Dzero, Maxim; Coleman, Piers

    2013-11-27

    Current theories of Kondo insulators employ the interaction of conduction electrons with localized Kramers doublets originating from a tetragonal crystalline environment, yet all Kondo insulators are cubic. Here we develop a theory of cubic topological Kondo insulators involving the interaction of Γ(8) spin quartets with a conduction sea. The spin quartets greatly increase the potential for strong topological insulators, entirely eliminating the weak topological phases from the diagram. We show that the relevant topological behavior in cubic Kondo insulators can only reside at the lower symmetry X or M points in the Brillouin zone, leading to three Dirac cones with heavy quasiparticles.

  3. Closing the spin gap in the Kondo insulator Ce3Bi4Pt3 at high magnetic fields

    PubMed

    Jaime; Movshovich; Stewart; Beyermann; Berisso; Hundley; Canfield; Sarrao

    2000-05-11

    Kondo insulator materials--such as CeRhAs, CeRhSb, YbB12, Ce3Bi4Pt3 and SmB6--are 3d, 4f and 5f intermetallic compounds that have attracted considerable interest in recent years. At high temperatures, they behave like metals. But as temperature is reduced, an energy gap opens in the conduction band at the Fermi energy and the materials become insulating. This contrasts with other f-electron compounds, which are metallic at all temperatures. The formation of the gap in Kondo insulators has been proposed to be a consequence of hybridization between the conduction band and the f-electron levels, giving a 'spin' gap. If this is indeed the case, metallic behaviour should be recovered when the gap is closed by changing external parameters, such as magnetic field or pressure. Some experimental evidence suggests that the gap can be closed in SmB6 (refs 5, 8) and YbB12 (ref. 9). Here we present specific-heat measurements of Ce3Bi4Pt3 in d.c. and pulsed magnetic fields up to 60 tesla. Numerical results and the analysis of our data using the Coqblin-Schrieffer model demonstrate unambiguously a field-induced insulator-to-metal transition. PMID:10821266

  4. Two-channel Kondo effect and renormalization flow with macroscopic quantum charge states.

    PubMed

    Iftikhar, Z; Jezouin, S; Anthore, A; Gennser, U; Parmentier, F D; Cavanna, A; Pierre, F

    2015-10-01

    Many-body correlations and macroscopic quantum behaviours are fascinating condensed matter problems. A powerful test-bed for the many-body concepts and methods is the Kondo effect, which entails the coupling of a quantum impurity to a continuum of states. It is central in highly correlated systems and can be explored with tunable nanostructures. Although Kondo physics is usually associated with the hybridization of itinerant electrons with microscopic magnetic moments, theory predicts that it can arise whenever degenerate quantum states are coupled to a continuum. Here we demonstrate the previously elusive 'charge' Kondo effect in a hybrid metal-semiconductor implementation of a single-electron transistor, with a quantum pseudospin of 1/2 constituted by two degenerate macroscopic charge states of a metallic island. In contrast to other Kondo nanostructures, each conduction channel connecting the island to an electrode constitutes a distinct and fully tunable Kondo channel, thereby providing unprecedented access to the two-channel Kondo effect and a clear path to multi-channel Kondo physics. Using a weakly coupled probe, we find the renormalization flow, as temperature is reduced, of two Kondo channels competing to screen the charge pseudospin. This provides a direct view of how the predicted quantum phase transition develops across the symmetric quantum critical point. Detuning the pseudospin away from degeneracy, we demonstrate, on a fully characterized device, quantitative agreement with the predictions for the finite-temperature crossover from quantum criticality.

  5. Topological Kondo Insulators

    NASA Astrophysics Data System (ADS)

    Dzero, Maxim; Xia, Jing; Galitski, Victor; Coleman, Piers

    2016-03-01

    This article reviews recent theoretical and experimental work on a new class of topological material -- topological Kondo insulators, which develop through the interplay of strong correlations and spin-orbit interactions. The history of Kondo insulators is reviewed along with the theoretical models used to describe these heavy fermion compounds. The Fu-Kane method of topological classification of insulators is used to show that hybridization between the conduction electrons and localized f electrons in these systems gives rise to interaction-induced topological insulating behavior. Finally, some recent experimental results are discussed, which appear to confirm the theoretical prediction of the topological insulating behavior in samarium hexaboride, where the long-standing puzzle of the residual low-temperature conductivity has been shown to originate from robust surface states.

  6. Lateral manipulation and interplay of local Kondo resonances in a two-impurity Kondo system

    NASA Astrophysics Data System (ADS)

    Ren, Jindong; Wu, Xu; Guo, Haiming; Pan, Jinbo; Du, Shixuan; Luo, Hong-Gang; Gao, Hong-Jun

    2015-08-01

    The atomic-scale spatial relationship of a two-impurity Kondo system has been determined at varying lateral distance by scanning tunneling microscopy (STM) and spectroscopy. The localized spins of two cobalt magnetic adatoms that are placed on different electrodes of an STM form two individual Kondo singlet states, each showing quite different Kondo coupling, i.e., the tip-Kondo with low Kondo temperature and the sample-Kondo with high Kondo temperature. The differential conductance dI/dV spectra show the continuous changes of the resonance peak feature when approaching the Kondo tip laterally to the local sample-Kondo impurity on the surface. The result indicates a notable interplay between these two Kondo systems. We propose a convolution model based on the q factor of the sample-Kondo (qs) and tip-Kondo (qt) to interpret the change of various tunneling channels and the evolution of the experimental spectra.

  7. Lateral manipulation and interplay of local Kondo resonances in a two-impurity Kondo system

    SciTech Connect

    Ren, Jindong; Wu, Xu; Guo, Haiming Pan, Jinbo; Du, Shixuan; Gao, Hong-Jun; Luo, Hong-Gang

    2015-08-17

    The atomic-scale spatial relationship of a two-impurity Kondo system has been determined at varying lateral distance by scanning tunneling microscopy (STM) and spectroscopy. The localized spins of two cobalt magnetic adatoms that are placed on different electrodes of an STM form two individual Kondo singlet states, each showing quite different Kondo coupling, i.e., the tip-Kondo with low Kondo temperature and the sample-Kondo with high Kondo temperature. The differential conductance dI/dV spectra show the continuous changes of the resonance peak feature when approaching the Kondo tip laterally to the local sample-Kondo impurity on the surface. The result indicates a notable interplay between these two Kondo systems. We propose a convolution model based on the q factor of the sample-Kondo (q{sub s}) and tip-Kondo (q{sub t}) to interpret the change of various tunneling channels and the evolution of the experimental spectra.

  8. Quantum quench of Kondo correlations in optical absorption

    NASA Astrophysics Data System (ADS)

    Weichselbaum, Andreas

    2013-03-01

    Absorption spectra of individual semiconductor quantum dots tunnel-coupled to a degenerate electron gas in the Kondo regime have recently become accessible to the experiment. The absorption of a single photon leads to an abrupt change in the system Hamiltonian, which can be tailored such that it results in a quantum quench of the Kondo correlations. This is accompanied by a clear signature in the form of an Anderson orthogonality catastrophe, induced by a vanishing overlap between initial and final many-body wave functions and with power-law exponents that can be tuned by an applied magnetic field. We have modeled the experiment in terms of an Anderson impurity model undergoing an optically induced quench, and studied this Kondo exciton in detail using both analytical methods and the Numerical Renormalization Group (NRG). Our NRG results reproduce the measured absorption line shapes very well, showing that NRG is ideally suited for the study of Kondo excitons. In summary, the experiments demonstrate that optical measurements on single artificial atoms offer new perspectives on many-body phenomena previously studied using transport spectroscopy only. Co-authors: Andreas Weichselbaum, Markus Hanl, and Jan von Delft, Ludwig Maximilians University.

  9. From Kondo lattices to Kondo superlattices.

    PubMed

    Shimozawa, Masaaki; Goh, Swee K; Shibauchi, Takasada; Matsuda, Yuji

    2016-07-01

    block layer. In addition, recent experiments involving CeCoIn5/YbCoIn5 superlattices have shown that the degree of the inversion symmetry breaking and, in turn, the Rashba splitting are controllable, offering the prospect of achieving even more fascinating superconducting states. Thus, these Kondo superlattices pave the way for the exploration of unconventional metallic and superconducting states. PMID:27275757

  10. From Kondo lattices to Kondo superlattices

    NASA Astrophysics Data System (ADS)

    Shimozawa, Masaaki; Goh, Swee K.; Shibauchi, Takasada; Matsuda, Yuji

    2016-07-01

    block layer. In addition, recent experiments involving CeCoIn5/YbCoIn5 superlattices have shown that the degree of the inversion symmetry breaking and, in turn, the Rashba splitting are controllable, offering the prospect of achieving even more fascinating superconducting states. Thus, these Kondo superlattices pave the way for the exploration of unconventional metallic and superconducting states.

  11. Observation of the two-channel Kondo effect

    NASA Astrophysics Data System (ADS)

    Potok, R. M.; Rau, I. G.; Shtrikman, Hadas; Oreg, Yuval; Goldhaber-Gordon, D.

    2007-03-01

    Some of the most intriguing problems in solid-state physics arise when the motion of one electron dramatically affects the motion of surrounding electrons. Traditionally, such highly correlated electron systems have been studied mainly in materials with complex transition metal chemistry. Over the past decade, researchers have learned to confine one or a few electrons within a nanometre-scale semiconductor `artificial atom', and to understand and control this simple system in detail3. Here we combine artificial atoms to create a highly correlated electron system within a nano-engineered semiconductor structure. We tune the system in situ through a quantum phase transition between two distinct states, each a version of the Kondo state, in which a bound electron interacts with surrounding mobile electrons. The boundary between these competing Kondo states is a quantum critical point-namely, the exotic and previously elusive two-channel Kondo state, in which electrons in two reservoirs are entangled through their interaction with a single localized spin.

  12. Spin polarization of the split Kondo state.

    PubMed

    von Bergmann, Kirsten; Ternes, Markus; Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

    2015-02-20

    Spin-resolved scanning tunneling microscopy is employed to quantitatively determine the spin polarization of the magnetic field-split Kondo state. Tunneling conductance spectra of a Kondo-screened magnetic atom are evaluated within a simple model taking into account inelastic tunneling due to spin excitations and two Kondo peaks positioned symmetrically around the Fermi energy. We fit the spin state of the Kondo-screened atom with a spin Hamiltonian independent of the Kondo effect and account for Zeeman splitting of the Kondo peak in the magnetic field. We find that the width and the height of the Kondo peaks scales with the Zeeman energy. Our observations are consistent with full spin polarization of the Kondo peaks, i.e., a majority spin peak below the Fermi energy and a minority spin peak above. PMID:25763966

  13. Magnetically induced QCD Kondo effect

    NASA Astrophysics Data System (ADS)

    Ozaki, Sho; Itakura, Kazunori; Kuramoto, Yoshio

    2016-10-01

    The "QCD Kondo effect" stems from the color exchange interaction in QCD with non-Abelian property, and can be realized in a high-density quark matter containing heavy-quark impurities. We propose a novel type of the QCD Kondo effect induced by a strong magnetic field. In addition to the fact that the magnetic field does not affect the color degrees of freedom, two properties caused by the Landau quantization in a strong magnetic field are essential for the "magnetically induced QCD Kondo effect"; (1) dimensional reduction to 1 +1 -dimensions, and (2) finiteness of the density of states for lowest energy quarks. We demonstrate that, in a strong magnetic field B , the scattering amplitude of a massless quark off a heavy quark impurity indeed shows a characteristic behavior of the Kondo effect. The resulting Kondo scale is estimated as ΛK≃√{eqB }αs1 /3exp {-4 π /Ncαslog (4 π /αs)} where αs and Nc are the fine structure constant of strong interaction and the number of colors in QCD, and eq is the electric charge of light quarks.

  14. A Maximally Supersymmetric Kondo Model

    SciTech Connect

    Harrison, Sarah; Kachru, Shamit; Torroba, Gonzalo; /Stanford U., Phys. Dept. /SLAC

    2012-02-17

    We study the maximally supersymmetric Kondo model obtained by adding a fermionic impurity to N = 4 supersymmetric Yang-Mills theory. While the original Kondo problem describes a defect interacting with a free Fermi liquid of itinerant electrons, here the ambient theory is an interacting CFT, and this introduces qualitatively new features into the system. The model arises in string theory by considering the intersection of a stack of M D5-branes with a stack of N D3-branes, at a point in the D3 worldvolume. We analyze the theory holographically, and propose a dictionary between the Kondo problem and antisymmetric Wilson loops in N = 4 SYM. We perform an explicit calculation of the D5 fluctuations in the D3 geometry and determine the spectrum of defect operators. This establishes the stability of the Kondo fixed point together with its basic thermodynamic properties. Known supergravity solutions for Wilson loops allow us to go beyond the probe approximation: the D5s disappear and are replaced by three-form flux piercing a new topologically non-trivial S3 in the corrected geometry. This describes the Kondo model in terms of a geometric transition. A dual matrix model reflects the basic properties of the corrected gravity solution in its eigenvalue distribution.

  15. Kondo spin screening cloud in two-dimensional electron gas with spin-orbit couplings.

    PubMed

    Feng, Xiao-Yong; Zhang, Fu-Chun

    2011-03-16

    A spin-1/2 Anderson impurity in a semiconductor quantum well with Rashba and Dresselhaus spin-orbit couplings is studied by using a variational wavefunction method. The local magnetic moment is found to be quenched at low temperatures. The spin-spin correlations of the impurity and the conduction electron density show anisotropy in both spatial and spin spaces, which interpolates the Kondo spin screenings of a conventional metal and of a surface of three-dimensional topological insulators.

  16. Mapping itinerant electrons around Kondo impurities.

    PubMed

    Prüser, H; Wenderoth, M; Weismann, A; Ulbrich, R G

    2012-04-20

    We investigate single Fe and Co atoms buried below a Cu(100) surface using low temperature scanning tunneling spectroscopy. By mapping the local density of states of the itinerant electrons at the surface, the Kondo resonance near the Fermi energy is analyzed. Probing bulk impurities in this well-defined scattering geometry allows separating the physics of the Kondo system and the measuring process. The line shape of the Kondo signature shows an oscillatory behavior as a function of depth of the impurity as well as a function of lateral distance. The oscillation period along the different directions reveals that the spectral function of the itinerant electrons is anisotropic. PMID:22680744

  17. Magnetic susceptibility of nanoscale Kondo systems

    NASA Astrophysics Data System (ADS)

    Skomski, R.; Zhang, R.; Kharel, P.; Enders, A.; Liou, S.-H.; Sellmyer, D. J.

    2010-05-01

    The mesoscopic Kondo effect in metallic nanoparticles containing a magnetic impurity is investigated by model calculations. A Maxwell-Garnett approach is used to approximately determine the resistivity of doped nanoparticles in a matrix, and the magnetic susceptibility is estimated from the confinement of the conduction electrons. Conductivity measurements of nanoparticles embedded in a matrix are difficult to realize, because metallic matrices distort the Kondo cloud, whereas insulating or semiconducting matrices yield a very weak signal. By comparison, susceptibility measurements do not suffer from these shortcomings. The Kondo effect survives in nanoparticles even if the cluster size is much smaller than the Kondo screening cloud, but the effective Curie constant becomes constant below a particle-size dependent transition temperature and the temperature dependence of the susceptibility is no longer universal.

  18. Spin versus charge noise from Kondo traps

    NASA Astrophysics Data System (ADS)

    da Silva, Luis G. G. V. Dias; de Sousa, Rogério

    2015-08-01

    Magnetic and charge noise have a common microscopic origin in solid-state devices, as described by a universal electron trap model. In spite of this common origin, magnetic (spin) and charge noise spectral densities display remarkably different behaviors when many-particle correlations are taken into account, leading to the emergence of the Kondo effect. We derive exact frequency sum rules for trap noise and perform numerical renormalization-group calculations to show that while spin noise is a universal function of the Kondo temperature, charge noise remains well described by single-particle theory even when the trap is deep in the Kondo regime. We obtain simple analytical expressions for charge and spin noise that account for Kondo screening in all frequency and temperature regimes, enabling the study of the impact of disorder and the emergence of magnetic 1 /f noise from Kondo traps. We conclude that the difference between charge and spin noise survives even in the presence of disorder, showing that noise can be more manageable in devices that are sensitive to magnetic (rather than charge) fluctuations and that the signature of the Kondo effect can be observed in spin noise spectroscopy experiments.

  19. Kondo peak splitting and Kondo dip induced by a local moment

    PubMed Central

    Niu, Pengbin; Shi, Yun-Long; Sun, Zhu; Nie, Yi-Hang; Luo, Hong-Gang

    2015-01-01

    Many features like spin-orbit coupling, bias and magnetic fields applied, and so on, can strongly influence the Kondo effect. One of the consequences is Kondo peak splitting. However, Kondo peak splitting led by a local moment has not been investigated systematically. In this research we study theoretically electronic transport through a single-level quantum dot exchange coupled to a local magnetic moment in the Kondo regime. We focus on the Kondo peak splitting induced by an anisotropic exchange coupling between the quantum dot and the local moment, which shows rich splitting behavior. We consider the cases of a local moment with S = 1/2 and S = 1. The longitudinal (z-component) coupling plays a role of multivalued magnetic fields and the transverse (x, y-components) coupling lifts the degeneracy of the quantum dot, both of which account for the fine Kondo peak splitting structures. The inter-level or intra-level transition processes are identified in detail. Moreover, we find a Kondo dip at the Fermi level under the proper parameters. The possible experimental observations of these theoretical results should deepen our understanding of Kondo physics. PMID:26658128

  20. The Kondo effect in ferromagnetic atomic contacts.

    PubMed

    Calvo, M Reyes; Fernández-Rossier, Joaquín; Palacios, Juan José; Jacob, David; Natelson, Douglas; Untiedt, Carlos

    2009-04-30

    Iron, cobalt and nickel are archetypal ferromagnetic metals. In bulk, electronic conduction in these materials takes place mainly through the s and p electrons, whereas the magnetic moments are mostly in the narrow d-electron bands, where they tend to align. This general picture may change at the nanoscale because electrons at the surfaces of materials experience interactions that differ from those in the bulk. Here we show direct evidence for such changes: electronic transport in atomic-scale contacts of pure ferromagnets (iron, cobalt and nickel), despite their strong bulk ferromagnetism, unexpectedly reveal Kondo physics, that is, the screening of local magnetic moments by the conduction electrons below a characteristic temperature. The Kondo effect creates a sharp resonance at the Fermi energy, affecting the electrical properties of the system; this appears as a Fano-Kondo resonance in the conductance characteristics as observed in other artificial nanostructures. The study of hundreds of contacts shows material-dependent log-normal distributions of the resonance width that arise naturally from Kondo theory. These resonances broaden and disappear with increasing temperature, also as in standard Kondo systems. Our observations, supported by calculations, imply that coordination changes can significantly modify magnetism at the nanoscale. Therefore, in addition to standard micromagnetic physics, strong electronic correlations along with atomic-scale geometry need to be considered when investigating the magnetic properties of magnetic nanostructures. PMID:19407797

  1. Effect of anisotropy in the S=1 underscreened Kondo lattice

    NASA Astrophysics Data System (ADS)

    Thomas, Christopher; da Rosa Simões, Acirete S.; Lacroix, Claudine; Iglesias, José Roberto; Coqblin, Bernard

    2014-12-01

    We study the effect of crystal field anisotropy in the underscreened S=1 Kondo lattice model. Starting from the two orbital Anderson lattice model and including a local anisotropy term, we show, through Schrieffer-Wolff transformation, that local anisotropy is equivalent to an anisotropic Kondo interaction (J∥≠J⊥). The competition and coexistence between ferromagnetism and Kondo effect in this effective model is studied within a generalized mean-field approximation. Several regimes are obtained, depending on the parameters, exhibiting or not coexistence of magnetic order and Kondo effect. Particularly, we show that a re-entrant Kondo phase at low temperature can be obtained. We are also able to describe phases where the Kondo temperature is smaller than the Curie temperature (TKKondo effect and ferromagnetism can be understood within this model.

  2. Kondo tunneling through real and artificial molecules.

    PubMed

    Kikoin, K; Avishai, Y

    2001-03-01

    When an asymmetric double dot is hybridized with itinerant electrons, its singlet ground state and lowly excited triplet state cross, leading to a competition between the Zhang-Rice mechanism of singlet-triplet splitting in a confined cluster and the Kondo effect (which accompanies the tunneling through quantum dot under a Coulomb blockade restriction). The rich physics of an underscreened S = 1 Kondo impurity in the presence of low-lying triplet-singlet excitations is exposed and estimates of the magnetic susceptibility and the electric conductance are presented, together with applications for molecule chemisorption on metallic substrates.

  3. Voltage Quench Dynamics of a Kondo System.

    PubMed

    Antipov, Andrey E; Dong, Qiaoyuan; Gull, Emanuel

    2016-01-22

    We examine the dynamics of a correlated quantum dot in the mixed valence regime. We perform numerically exact calculations of the current after a quantum quench from equilibrium by rapidly applying a bias voltage in a wide range of initial temperatures. The current exhibits short equilibration times and saturates upon the decrease of temperature at all times, indicating Kondo behavior both in the transient regime and in the steady state. The time-dependent current saturation temperature connects the equilibrium Kondo temperature to a substantially increased value at voltages outside of the linear response. These signatures are directly observable by experiments in the time domain. PMID:26849606

  4. The physics of Kondo impurities in graphene.

    PubMed

    Fritz, Lars; Vojta, Matthias

    2013-03-01

    This article summarizes our understanding of the Kondo effect in graphene, primarily from a theoretical perspective. We shall describe different ways to create magnetic moments in graphene, either by adatom deposition or via defects. For dilute moments, the theoretical description is in terms of effective Anderson or Kondo impurity models coupled to graphene's Dirac electrons. We shall discuss in detail the physics of these models, including their quantum phase transitions and the effect of carrier doping, and confront this with existing experimental data. Finally, we will point out connections to other quantum impurity problems, e.g., in unconventional superconductors, topological insulators, and quantum spin liquids.

  5. Transport across two interacting quantum dots: Bulk Kondo, Kondo box, and molecular regimes

    NASA Astrophysics Data System (ADS)

    Costa Ribeiro, Laercio; Hamad, Ignacio; Chiappe, Guillermo; Victoriano Anda, Enrique

    2015-03-01

    We analyze the transport properties of a double quantum dot device with both dots coupled to perfect conducting leads and to a finite chain of N noninteracting sites connecting both of them. The interdot chain strongly influences the transport across the system and the local density of states of the dots. We study the case of a small number of sites, so that Kondo box effects are present, varying the coupling between the dots and the chain. For odd N and small coupling between the interdot chain and the dots, a state with two coexisting Kondo regimes develops: the bulk Kondo due to the quantum dots connected to leads and the one produced by the screening of the quantum dot spins by the spin in the finite chain at the Fermi level. As the coupling to the interdot chain increases, there is a crossover to a molecular Kondo effect, due to the screening of the molecule (formed by the finite chain and the quantum dots) spin by the leads. For even N the two Kondo temperatures regime does not develop and the physics is dominated by the usual competition between Kondo and antiferromagnetism between the quantum dots. We acknowledge financial support from the Brazilian agencies FAPERJ and CNPq.

  6. Many-body breakdown of indirect gap in topological Kondo insulators

    NASA Astrophysics Data System (ADS)

    Wysokiński, Marcin M.; Fabrizio, Michele

    2016-09-01

    We show that the inclusion of nonlocal correlation effects in a variational wave function for the ground state of a topological Anderson lattice Hamiltonian is capable of describing both topologically trivial insulating phases and nontrivial ones characterized by an indirect gap, as well as its closure at the transition into a metallic phase. The method, though applied to an oversimplified model, thus captures the metallic and insulating states that are indeed observed in a variety of Kondo semiconductors, while accounting for topologically nontrivial band structures.

  7. The Kondo tip decorated by the Co atom

    NASA Astrophysics Data System (ADS)

    Feng, Wei; Liu, Qin; Lai, Xinchun; Zhao, Aidi

    2016-11-01

    The Kondo effect of single Co adatoms on Ru(0001) is detected with two different kinds of co-decorated tip (Kondo tip) by using low temperature scanning tunneling microscopy and scanning tunneling spectroscopy. We call the relatively separated two magnetic impurities in the tunneling region ‘two Kondo system’ to distinguish it from the ‘two-impurity Kondo system’. We find that the artificially constructed Kondo tips can be generally categorized into two types of Kondo resonances, which have distinct Fano line shapes with quantum interference factor |q| ≫ 1 and |q| ∼ 1, respectively. The tunneling spectra of six constructed two Kondo systems can be well fitted by summing the two Fano resonances of the two subsystems and a linear background. More interestingly, by extracting the amplitudes of the two Fano resonances in the spectra, we find that the electron transmission of such a two Kondo system in the tunneling region is dominated by the quantum interference of the Kondo tip, which is directly related to the geometric configuration of the adsorbed Kondo atom on the tip.

  8. Dynamical symmetries in Kondo tunneling through complex quantum dots.

    PubMed

    Kuzmenko, T; Kikoin, K; Avishai, Y

    2002-10-01

    Kondo tunneling reveals hidden SO(n) dynamical symmetries of evenly occupied quantum dots. As is exemplified for an experimentally realizable triple quantum dot in parallel geometry, the possible values n=3,4,5,7 can be easily tuned by gate voltages. Following construction of the corresponding o(n) algebras, scaling equations are derived and Kondo temperatures are calculated. The symmetry group for a magnetic field induced anisotropic Kondo tunneling is SU(2) or SO(4).

  9. Kondo force in shuttling devices: dynamical probe for a Kondo cloud.

    PubMed

    Kiselev, M N; Kikoin, K A; Gorelik, L Y; Shekhter, R I

    2013-02-01

    We consider the electromechanical properties of a single-electronic device consisting of a movable quantum dot attached to a vibrating cantilever, forming a tunnel contact with a nonmovable source electrode. We show that the resonance Kondo tunneling of electrons amplifies exponentially the strength of nanoelectromechanical (NEM) coupling in such a device and make the latter insensitive to mesoscopic fluctuations of electronic levels in a nanodot. It is also shown that the study of a Kondo-NEM phenomenon provides additional (as compared with standard conductance measurements in a nonmechanical device) information on retardation effects in the formation of a many-particle cloud accompanying the Kondo tunneling. A possibility for superhigh tunability of mechanical dissipation as well as supersensitive detection of mechanical displacement is demonstrated.

  10. Nuclear magnetic resonance in Kondo lattice systems.

    PubMed

    Curro, Nicholas J

    2016-06-01

    Nuclear magnetic resonance has emerged as a vital tool to explore the fundamental physics of Kondo lattice systems. Because nuclear spins experience two different hyperfine couplings to the itinerant conduction electrons and to the local f moments, the Knight shift can probe multiple types of spin correlations that are not accessible via other techniques. The Knight shift provides direct information about the onset of heavy electron coherence and the emergence of the heavy electron fluid.

  11. Kondo Effect at a Quantum Critical Point

    NASA Astrophysics Data System (ADS)

    Ramazashvili, Revaz; Coleman, Piers

    1998-03-01

    The Kondo effect in a metal on the verge of a zero-temperature magnetic instability provides a fascinating example of interference between local and long-range correlations. (A. I. Larkin and V. I. Mel'nikov, Sov. Phys. JETP 34, 656 (1972)) (P. Coleman and A. M. Tsvelik, cond-mat/9707003) (A. Sengupta, cond-mat/9707316) We discuss possible consequences of this interference, including the breakdown of the Fermi liquid state.

  12. Kondo effects in triangular triple quantum dots

    NASA Astrophysics Data System (ADS)

    Oguri, Akira; Numata, Takahide; Nisikawa, Yunori; Hewson, A. C.

    2009-03-01

    We study the conductance through a triangular triple quantum dot, which is connected to two noninteracting leads, using the numerical renormalization group (NRG). It is found that the system shows a variety of Kondo effects depending on the filling of the triangle. The SU(4) Kondo effect occurs at half-filling, and a sharp conductance dip due to a phase lapse appears in the gate-voltage dependence. Furthermore, when four electrons occupy the three sites on average, a local S=1 moment, which is caused by the Nagaoka mechanism, is induced along the triangle. The temperature dependence of the entropy and spin susceptibility of the triangle shows that this moment is screened by the conduction electrons via two separate stages at different temperatures. The two-terminal and four-terminal conductances show a clear difference at the gate voltages, where the SU(4) or the S=1 Kondo effects occur[1]. We will also discuss effects of deformations of the triangular configuration, caused by the inhomogeneity in the inter-dot couplings and in the gate voltages. [4pt] [1] T.Numata, Y.Nisikawa, A.Oguri, and A.C.Hewson: arXiv:0808.3496.

  13. Magnetic frustration in itinerant systems: the Kondo polaron problem

    NASA Astrophysics Data System (ADS)

    Isaev, Leonid; Batista, Cristian; Vekhter, Ilya

    2013-03-01

    We study the interplay between magnetic frustration and Kondo screening in Kondo lattices by analyzing the J1-J2 antiferromagnetic chain coupled to a conduction band. The system is tuned to the Majumdar-Ghosh point J2 =J1 / 2 which stabilizes a dimer valence-bond solid at weak Kondo coupling JK. We use an effective low-energy theory to demonstrate that sufficiently large JK results in a proliferation of ``Kondo polarons'', i.e. Kondo-screened domain-wall excitations of the dimer state, and collapse of the dimer order via a 2nd order quantum phase transition. At the quantum critical point, JK =JKc , these polarons become gapless, and we argue that the transition itself belongs to a 2D Ising universality class. For JK >JKc increasing concentration of the polarons leads to a continuous growth of the electron Fermi momentum until all spins are absorbed by the Fermi sea.

  14. Application of the underscreened Kondo lattice model to neptunium compounds

    NASA Astrophysics Data System (ADS)

    Thomas, Christopher; da Rosa Simoes, Acirete S.; Iglesias, J. R.; Lacroix, C.; Coqublin, B.

    2012-12-01

    The coexistence of Kondo effect and ferromagnetic order has been observed in many uranium and neptunium compounds such as UTe or Np2PdGa3. This coexistence can be described within the underscreened Anderson lattice model with two f-electrons and S = 1 spins on each site. After performing the Schrieffer-Wolff transformation on this model, we have obtained an effective Hamiltonian with a f-band term in addition to the Kondo interaction for S = 1 spins. The results indicate a coexistence of Kondo effect and ferromagnetic order, with different relative values of the Kondo TK and Curie TC temperatures. We emphasize here especially the case TK < TC where there is a Kondo behavior below TC and a clear decrease of the magnetization below TK. Such a behavior has been observed in the magnetization curves of NpNiSi2 at low temperatures.

  15. Kondo Effect in a Single Electron Transistor

    NASA Astrophysics Data System (ADS)

    Goldhaber-Gordon, David

    1998-03-01

    When a field-effect transistor is made very small, and electrons in the channel are separated from those in the leads by tunnel junctions, the transistor turns on and off every time an extra electron is added to the channel. The droplet of electrons confined in the channel of such a single-electron transistor (SET) interacts with electrons in the leads. This is in close analogy to an impurity atom interacting with the delocalized electrons in a metal, the traditional system for studying the Kondo effect.(Y. Meir, N.S. Wingreen, and P.A. Lee. PRL) 70, 2601 (1993) I will discuss measurements on a new generation of SETs that display all the aspects of the Kondo effect:(D. Goldhaber-Gordon, Hadas Shtrikman, D. Mahalu, D. Abusch-Magder, U. Meirav, and M.A. Kastner. To be published in Nature). a spin singlet forms between a localized electron in the channel and delocalized electrons in the leads, causing an enhancement of the zero-bias conductance, when the number of electrons on the artificial atom is odd but not when it is even. The system can be studied out of equilibrium by applying a voltage between the two leads, an impossible procedure in bulk Kondo systems. The spin singlet is altered by applying such a voltage or a magnetic field or by increasing the temperature, all in ways that agree with predictions. In addition, the tunability of an SET allows study of the system over a range of parameters not easily accessible to previous calculations or experiments.

  16. Numerical analysis of the spatial range of the Kondo effect

    SciTech Connect

    Busser, C. A.; Martins, G. B.; Ribeiro, L. Costa; Vernek, E.; Anda, E. V.; Dagotto, Elbio R

    2010-01-01

    The spatial length of the Kondo screening is still a controversial issue related to Kondo physics. While renormalization-group and Bethe-Ansatz solutions have provided detailed information about the thermodynamics of magnetic impurities, they are insufficient to study the effect on the surrounding electrons, i.e., the spatial range of the correlations created by the Kondo effect between the localized magnetic moment and the conduction electrons. The objective of this work is to present a quantitative way of measuring the extension of these correlations by studying their effect directly on the local density of states (LDOS) at arbitrary distances from the impurity. The numerical techniques used, the embedded cluster approximation, the finite-U slave bosons, and numerical renormalization group, calculate the Green s functions in real space. With this information, one can calculate how the local density of states away from the impurity is modified by its presence, below and above the Kondo temperature, and then estimate the range of the disturbances in the noninteracting Fermi sea due to the Kondo effect, and how it changes with the Kondo temperature TK. The results obtained agree with results obtained through spin-spin correlations, showing that the LDOS captures the phenomenology of the Kondo cloud as well.

  17. Competing Kondo Effects in Non-Kramers Doublet Systems

    NASA Astrophysics Data System (ADS)

    Kusunose, Hiroaki

    2016-06-01

    In non-Kramers Kondo systems with quadrupolar degrees of freedom, an ordinary magnetic Kondo effect can compete with the quadrupolar Kondo effect. We discuss such competition keeping PrT2Zn20 (T = Ir, Rh) and PrT2Al20 (T = V, Ti) in mind, where the Γ3 non-Kramers crystalline-electric-field (CEF) doublet ground state is realized in a Pr3+ ion with a (4f)2 configuration under cubic symmetry. The quadrupolar Kondo effect can be described by the two-channel Kondo model, which leads to the local non-Fermi-liquid (NFL) ground state, while the magnetic Kondo effect favors the ordinary local Fermi-liquid (FL) ground state. On the basis of the minimal extended two-channel Kondo model including the magnetic Kondo coupling as well, we investigate the competition and resulting thermodynamics, and orbital/magnetic and single-particle excitation spectra by Wilson's numerical renormalization group (NRG) method. There is a first-order transition between the NFL and FL ground states. In addition to these two states, the alternative FL state accompanied by a free magnetic spin appears in the intermediate temperature range, which eventually reaches the true NFL ground state, as a consequence of the stronger competition between the magnetic and quadrupolar Kondo effects. In this peculiar state, the magnetic susceptibility shows a Curie-like behavior, while the orbital fluctuation exhibits the FL behavior. Moreover, the single-particle spectra yield a more singular behavior. Implications to the Pr 1-2-20 systems are briefly discussed.

  18. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  19. Kondo effect and non-Fermi-liquid behavior in Dirac and Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Principi, Alessandro; Vignale, Giovanni; Rossi, E.

    2015-07-01

    We study the Kondo effect in three-dimensional (3D) Dirac materials and Weyl semimetals. We find the scaling of the Kondo temperature with respect to the doping n and the coupling J between the moment of the magnetic impurity and the carriers of the semimetal. We consider the interplay of long-range scalar disorder and Kondo screening and find that it causes the Kondo effect to be characterized not by a Kondo temperature, but by a distribution of Kondo temperatures with features that cause the appearance of strong non-Fermi-liquid behavior. We then consider the effect of Kondo screening, and of the interplay of Kondo screening and long-range scalar disorder, on the transport properties of Weyl semimetals. Finally, we compare the properties of the Kondo effect in 3D and 2D Dirac materials such as graphene and topological insulators.

  20. Is the black phase of SmS a topological Kondo insulator?

    NASA Astrophysics Data System (ADS)

    Bauer, Eric; Ghimire, N. J.; Ronning, F.; Batista, C.; Byler, D.; Thompson, J. D.; Rahmanisisan, A.; Fisk, Z.

    2015-03-01

    SmS is a prototypical Kondo insulator where electronic correlations drive a system insulating that would otherwise be metallic. Whether or not such a system is also a topological insulator that hosts a protected metallic surface state, depends on the parity of the wavefunction of the occupied states. However, unlike weakly correlated materials, it is unclear whether state-of-the-art electronic structure calculations accurately predict the parity of the occupied wavefunctions of correlated insulators. Nevertheless, Dzero and collaborators suggest that Kondo insulators such as SmB6 can be topological. Like SmB6, Cubic SmS is a non-magnetic semiconductor with an insulating behavior at ambient pressure and low temperatures driven by hybridization with the Sm f-electrons. At 6 kbar, SmS undergoes a phase transition into a valance fluctuating phase accompanied by a visible color change from black to gold. It then undergoes a second phase transition at about 20 kbar to an antiferromagnetic order at low temperatures. We will discuss whether electronic structure calculations indicate a topological state of SmS at P =0. We will also discuss whether or not the magnetic, thermal and transport properties of the black phase of SmS are consistent with the existence of a topological protected surface state.

  1. Coexistence of Kondo effect and ferromagnetism in the Underscreened Kondo Lattice model

    NASA Astrophysics Data System (ADS)

    Thomas, C.; Simões, A. S. R.; Iglesias, J. R.; Lacroix, C.; Perkins, N. B.; Coqblin, B.

    2011-12-01

    In this work we use a Schrieffer-Wolff transformation in a two-fold degenerate periodic Anderson lattice to describe the coexistence of Kondo effect and ferromagnetism in some uranium and neptunium compounds. We show that the inclusion of a bandwidth for the f electrons can account for a weak delocalization of 5f electrons. Using a mean field approximation, we show that a maximum of TC versus JK can be found when the bandwidth is proportional to JK.

  2. Competition between Kondo Screening and Quantum Hall Edge Reconstruction.

    PubMed

    Heine, A W; Tutuc, D; Zwicknagl, G; Haug, R J

    2016-03-01

    We report on a Kondo correlated quantum dot connected to two-dimensional leads where we demonstrate the renormalization of the g factor in the pure Zeeman case. i.e., for magnetic fields parallel to the plane of the quantum dot. For the same system, we study the influence of orbital effects by investigating the quantum Hall regime; i.e., a perpendicular magnetic field is applied. In this case an unusual behavior of the suppression of the Kondo effect and of the split zero-bias anomaly is observed. The splitting decreases with magnetic field and shows discontinuous changes that are attributed to the intricate interplay between Kondo screening and the quantum Hall edge structure originating from electrostatic screening. This edge structure, made up of compressible and incompressible stripes, strongly affects the Kondo temperature of the quantum dot and thereby influences the renormalized g factor. PMID:26991192

  3. Competition between Kondo Screening and Quantum Hall Edge Reconstruction

    NASA Astrophysics Data System (ADS)

    Heine, A. W.; Tutuc, D.; Zwicknagl, G.; Haug, R. J.

    2016-03-01

    We report on a Kondo correlated quantum dot connected to two-dimensional leads where we demonstrate the renormalization of the g factor in the pure Zeeman case. i.e., for magnetic fields parallel to the plane of the quantum dot. For the same system, we study the influence of orbital effects by investigating the quantum Hall regime; i.e., a perpendicular magnetic field is applied. In this case an unusual behavior of the suppression of the Kondo effect and of the split zero-bias anomaly is observed. The splitting decreases with magnetic field and shows discontinuous changes that are attributed to the intricate interplay between Kondo screening and the quantum Hall edge structure originating from electrostatic screening. This edge structure, made up of compressible and incompressible stripes, strongly affects the Kondo temperature of the quantum dot and thereby influences the renormalized g factor.

  4. Tunable unconventional Kondo effect on topological insulator surfaces

    NASA Astrophysics Data System (ADS)

    Isaev, L.; Ortiz, G.; Vekhter, I.

    2015-11-01

    We study Kondo physics of a spin-1/2 impurity in electronic matter with strong spin-orbit interaction, which can be realized by depositing magnetic adatoms on the surface of a three-dimensional topological insulator. We show that magnetic properties of topological surface states and the very existence of Kondo screening strongly depend on details of the bulk material, and specifics of surface preparation encoded in time-reversal preserving boundary conditions for electronic wavefunctions. When this tunable Kondo effect occurs, the impurity spin is screened by purely orbital motion of surface electrons. This mechanism gives rise to a transverse magnetic response of the surface metal, and to spin textures that can be used to experimentally probe signatures of a Kondo resonance. Our predictions are particularly relevant for STM measurements in Pb Te -class crystalline topological insulators, but we also discuss implications for other classes of topological materials.

  5. Schwinger boson approach to the fully screened Kondo model.

    PubMed

    Rech, J; Coleman, P; Zarand, G; Parcollet, O

    2006-01-13

    We apply the Schwinger boson scheme to the fully screened Kondo model and generalize the method to include antiferromagnetic interactions between ions. Our approach captures the Kondo crossover from local moment behavior to a Fermi liquid with a nontrivial Wilson ratio. When applied to the two-impurity model, the mean-field theory describes the "Varma-Jones" quantum phase transition between a valence bond state and a heavy Fermi liquid.

  6. Multichannel Kondo impurity dynamics in a Majorana device.

    PubMed

    Altland, A; Béri, B; Egger, R; Tsvelik, A M

    2014-08-15

    We study the multichannel Kondo impurity dynamics realized in a mesoscopic superconducting island connected to metallic leads. The effective "impurity spin" is nonlocally realized by Majorana bound states and strongly coupled to lead electrons by non-Fermi liquid correlations. We explore the spin dynamics and its observable ramifications near the low-temperature fixed point. The topological protection of the system raises the perspective to observe multichannel Kondo impurity dynamics in experimentally realistic environments.

  7. Vibration-mediated Kondo transport in molecular junctions: conductance evolution during mechanical stretching

    PubMed Central

    Rakhmilevitch, David

    2015-01-01

    Summary The vibration-mediated Kondo effect attracted considerable theoretical interest during the last decade. However, due to lack of extensive experimental demonstrations, the fine details of the phenomenon were not addressed. Here, we analyze the evolution of vibration-mediated Kondo effect in molecular junctions during mechanical stretching. The described analysis reveals the different contributions of Kondo and inelastic transport. PMID:26734532

  8. Enhancement of Kondo effect through Rashba spin-orbit interactions

    NASA Astrophysics Data System (ADS)

    Sandler, Nancy; Zarea, Mehdi; Ulloa, Sergio

    2011-03-01

    The role of Rashba spin-orbit (RSO) interactions on the Kondo regime has been a topic of debate since resistivity measurements on Pt doped Cu:Mn compounds were interpreted as evidence for suppression of the Kondo effect by SO scattering. Subsequent theoretical and experimental activity has yielded conflicting results. Thus, the question: what is the role of SO interactions in the Kondo regime? remains open. To provide a definite answer we obtain an exact solution of an Anderson magnetic impurity model in a two-dimensional metallic host with RSO interactions. We show that the Hamiltonian reduces to an effective two-band Anderson model coupled to a S=1/2 impurity. An appropriate Schrieffer-Wolff transformation produces an effective 2-channel Kondo model plus a Dzyaloshiinski-Moriya (DM) interaction term. The exact solution reveals that the impurity couples to the bath with ferro- and antiferromagnetic couplings. DM interactions, that vanish at half-filling and at the Hubbard U-infinity limits, introduce an exponential increase in the value of the Kondo temperature. Supported by NSF-PIRE and MWN/CIAM.

  9. Kondo phase transitions of magnetic impurities in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Fang, Tie-Feng; Sun, Qing-feng

    2013-02-01

    We propose carbon nanotubes (CNTs) with magnetic impurities as a versatile platform to achieve exciting Kondo physics, where the CNT bath is gapped by the spin-orbit interaction and renormalized by interference effects. While the strong-coupling phase is inaccessible for the special case of half-filled impurities in neutral armchair CNTs, the system in general can undergo quantum phase transitions to the Kondo ground state. The resultant position-specific phase diagrams are investigated upon variation of the CNT radius, chirality, and carrier doping, revealing several striking features, e.g., the existence of a maximal radius for nonarmchair CNTs to realize phase transitions, and an interference-induced suppression of the Kondo screening. We show that by tuning the Fermi energy via electrostatic gating, the quantum critical region can be experimentally accessed.

  10. Surface Kondo Impurities in the Slave-Boson Approach

    NASA Astrophysics Data System (ADS)

    Anda, Enrique; Vernek, Edson

    2005-03-01

    Transport properties of magnetic impurities on surfaces have captured a great deal of attention lately. Atom manipulation and topographic imaging techniques using scanning tunneling microscope have confirmed some theoretical predictions on Kondo physics and at the same time revealed other interesting behavior in these systems. For example, experiments have reported unexpectedly high Kondo temperatures for multi-impurity and molecular structures on metallic surfaces. Motivated by these experimental results we apply slave boson techniques for finite Coulomb interaction (finite U) to study the transport properties of magnetic impurities on a metallic surface in the Kondo regime. We report here on our studies of the role of fluctuations on the slave boson number for the case of one impurity on metallic surfaces. We compare our results to other theoretical approaches and to experimental results. Supported by CAPES-Brazil and NSF-IMC and NSF-NIRT.

  11. Real-space imaging of Kondo screening in a two-dimensional O₂ lattice.

    PubMed

    Jiang, Ying; Zhang, Y N; Cao, J X; Wu, R Q; Ho, W

    2011-07-15

    Kondo lattice systems can exhibit unusual many-body behaviors that result from the interplay between onsite Kondo screening and intersite coupling. We used scanning tunneling microscopy to image the Kondo resonance in a nonconventional Kondo lattice formed by self-assembled oxygen (O(2)) molecules, which are paramagnetic, on the gold reconstructed surface [Au(110)-1×2]. The interplay between the intermolecular coupling for molecules adsorbed along chains and the onsite Kondo effect leads to the coexistence of both local and nonlocal Kondo screening at the atomic level. The latter provides evidence for collective deconfinement of magnetization induced in Au, whereas the former shows local "hybridization" between the Kondo clouds of nearest-neighbor O(2) molecules.

  12. Quadrupolar Kondo effect in uranium heavy-electron materials?

    NASA Technical Reports Server (NTRS)

    Cox, D. L.

    1987-01-01

    The possibility of an electric quadrupole Kondo effect for a non-Kramers doublet on a uranium (U) ion is a cubic metallic host is demonstrated by model calculations showing a Kondo upturn in the resistivity, universal quenching of the quadrupolar moment, and a heavy-electron anomaly in the electronic specific heat. With inclusion of excited crystal-field levels, some of the unusual magnetic-response data in the heavy-electron superconductor UBe13 may be understood. Structural phase transitions at unprecedented low temperatures may occur in U-based heavy-electron materials.

  13. The entanglement structure of the Kondo singlet in energy space

    NASA Astrophysics Data System (ADS)

    Yang, Chun; Feiguin, Adrian

    We unveil the entanglement structure of the Kondo singlet in energy space by studying the contribution of each individual free electron eigenstate. This is a problem of two spins coupled to a bath, where the bath is formed by the remaining conduction electrons. Being a mixed state, we resort to the ''concurrence'' as a good measure of entanglement. Using the density matrix renormalization group and analytical variational calculations with the Yoshida wave-function, and slave bosons, we find a distinct transition between weak and strong coupling regimes characterized by very different entanglement distributions. We discuss implications to the theory of the Kondo cloud.

  14. Inelastic transport through Aharonov-Bohm interferometer in Kondo regime

    SciTech Connect

    Yoshii, Ryosuke; Eto, Mikio; Sakano, Rui; Affleck, Ian

    2013-12-04

    We formulate elastic and inelastic parts of linear conductance through an Aharonov-Bohm (AB) ring with an embedded quantum dot in the Kondo regime. The inelastic part G{sub inel} is proportional to T{sup 2} when the temperature T is much smaller than the Kondo temperature T{sub K}, whereas it is negligibly small compared with elastic part G{sub el} when T ≫ T{sub K}. G{sub inel} weakly depends on the magnetic flux penetrating the AB ring, which disturbs the precise detection of G{sub el}/(G{sub el}+G{sub inel}) by the visibility of AB oscillation.

  15. Phase coherence of conduction electrons below the Kondo temperature

    NASA Astrophysics Data System (ADS)

    Alzoubi, Gassem M.; Birge, Norman O.

    2007-03-01

    The scattering of conduction electrons by magnetic impurities is known as the Kondo effect. This effect has been the subject of theoretical and experimental investigations for several decades. Until very recently [1, 2], however, there was no theoretical expression for the temperature dependence of the inelastic scattering rate valid for temperatures T not too far below the Kondo temperature, TK. We present experimental measurements of the phase decoherence rate, τφ-1, of conduction electrons in disordered dilute AgFe Kondo wires [3]. We compare the temperature dependence of the magnetic scattering rate, γm, with a recent theory of dephasing by Kondo impurities [2]. A good agreement with theory is obtained for T/TK > 0.1. At lower T, γm deviates from theory with a flatter T-dependence. [1] G. Zarand, L. Borda, J. von Delft, and N. Andrei, Phys.Rev. Lett. 93, 107204 (2004). [2] T. Micklitz, A. Altland, T. A. Costi, A. Rosch, Phys.Rev. Lett. 96, 226601 (2006). [3] G.M. Alzoubi and N.O. Birge, Phys.Rev. Lett. in press (2006).

  16. Manifestation of the Kondo effect in nonlinear optical absorption

    NASA Astrophysics Data System (ADS)

    Shahbazyan, T. V.; Perakis, I. E.; Raikh, M. E.

    2000-03-01

    We study the nonlinear optical absorption due to transitions from a deep impurity to states above a Fermi sea. Previous calculations(See, e.g., S. Mukamel, Principles of Nonlinear Optical Spectroscopy), (Oxford University Press, 1995). of \\chi^(3) included contributions from virtual processes involving doubly occupied impurity state. This indicates the necessity of incorporating the Hubbard repulsion of electrons at the impurity in calculation of nonlinear optical properties. Detailed calculations are performed for pump-probe spectrum. We demonstrate that Hubbard-repulsion-induced suppression of two-electron states leads to the divergency in \\chi^(3) near the absorption threshold. The origin of this divergency lies in the Kondo-physics;(See, e.g., A. C. Hewson, The Kondo Problem to Heavy Fermions), (Cambridge University Press, 1993). a monochromatic optical field induces the coupling between the impurity and conduction band states that is similar to the hybridization terms in the Anderson model.^3 Remarkably, for light-induced Kondo-absorption, the Kondo temperature can be tuned by the intensity and frequency of the pump field.

  17. Kondo effect in coupled quantum dots: A noncrossing approximation study

    NASA Astrophysics Data System (ADS)

    Aguado, Ramón; Langreth, David C.

    2003-06-01

    The out-of-equilibrium transport properties of a double quantum dot system in the Kondo regime are studied theoretically by means of a two-impurity Anderson Hamiltonian with interimpurity hopping. The Hamiltonian, formulated in slave-boson language, is solved by means of a generalization of the noncrossing approximation (NCA) to the present problem. We provide benchmark calculations of the predictions of the NCA for the linear and nonlinear transport properties of coupled quantum dots in the Kondo regime. We give a series of predictions that can be observed experimentally in linear and nonlinear transport measurements through coupled quantum dots. Importantly, it is demonstrated that measurements of the differential conductance G=dI/dV, for the appropriate values of voltages and interdot tunneling couplings, can give a direct observation of the coherent superposition between the many-body Kondo states of each dot. This coherence can be also detected in the linear transport through the system: the curve linear conductance vs temperature is nonmonotonic, with a maximum at a temperature T* characterizing quantum coherence between both the Kondo states.

  18. Simple Description of the Two-Channel Kondo Problem

    NASA Astrophysics Data System (ADS)

    Coleman, Piers

    1996-03-01

    The physics of the two channel Kondo model provides an example of a new universality class of non-Fermi liquid behavior. Its spin physics provides one of the few concrete examples of true marginal Fermi liquid behavior. Two channel Kondo physics may also provide one of basic engines for non Fermi liquid behavior in heavy fermion systems. For these reasons, a simple description of the underlying physics in this model is highly desirable. Conventionally, this model had yielded only to the most sophisticated and specialized mathematical techniques. I shall explain (P.Coleman, L. Ioffe and A. M. Tsvelik, Phys. Rev. B), 52, 6611 (1995). (P. Coleman and A. Schofield, Phys. Rev. Lett), 75, 2184, (1995) how we have been able to circumvent the problems encountered by earlier attempts to develop a simple picture by reformulating the two-channel Kondo model to explicitly remove the unscattered charge degrees of freedom from the outset. This procedure moves the non-Fermi liquid fixed point to infinite coupling where simple back-of-the envelope methods reveals the secret workings of its marginal Fermi liquid fixed point. I shall carefully explain how marginal spin-physics of the two-channel Kondo model results from the formation of a neutral three-body bound state at the Fermi energy. This new physics may prove to be very important as a guide to our general understanding of marginal Fermi liquid behavior.

  19. Antiferromagnetism and Kondo screening on a honeycomb lattice

    NASA Astrophysics Data System (ADS)

    Lin, Heng-Fu; Hong-Shuai, Tao; Guo, Wen-Xiang; Liu, Wu-Ming

    2015-05-01

    Magnetic adatoms in the honeycomb lattice have received tremendous attention due to the interplay between Ruderman-Kittel-Kasuya-Yosida interaction and Kondo coupling leading to very rich physics. Here we study the competition between the antiferromagnetism and Kondo screening of local moments by the conduction electrons on the honeycomb lattice using the determinant quantum Monte Carlo method. While changing the interband hybridization V, we systematically investigate the antiferromagnetic-order state and the Kondo singlet state transition, which is characterized by the behavior of the local moment, antiferromagnetic structure factor, and the short range spin-spin correlation. The evolution of the single particle spectrum are also calculated as a function of hybridization V, we find that the system presents a small gap in the antiferromagnetic-order region and a large gap in the Kondo singlet region in the Fermi level. We also find that the localized and itinerant electrons coupling leads to the midgap states in the conduction band in the Fermi level at very small V. Moreover, the formation of antiferromagnetic order and Kondo singlet are studied as on-site interaction U or temperature T increasing, we have derived the phase diagrams at on-site interaction U (or temperature T) and hybridization V plane. Project supported by the National Key Basic Research Special Foundation of China (Grants Nos. 2011CB921502 and 2012CB821305), the National Natural Science Foundation of China (Grants Nos. 61227902, 61378017, and 11434015), the State Key Laboratory for Quantum Optics and Quantum Optical Devices, China (Grant No. KF201403).

  20. Surface Kondo effect and non-trivial metallic state of the Kondo insulator YbB12.

    PubMed

    Hagiwara, Kenta; Ohtsubo, Yoshiyuki; Matsunami, Masaharu; Ideta, Shin-Ichiro; Tanaka, Kiyohisa; Miyazaki, Hidetoshi; Rault, Julien E; Fèvre, Patrick Le; Bertran, François; Taleb-Ibrahimi, Amina; Yukawa, Ryu; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Sumida, Kazuki; Okuda, Taichi; Iga, Fumitoshi; Kimura, Shin-Ichi

    2016-01-01

    A synergistic effect between strong electron correlation and spin-orbit interaction has been theoretically predicted to realize new topological states of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6 has been actively discussed. Here, we show a metallic SS on the clean surface of another TKI candidate YbB12(001) using angle-resolved photoelectron spectroscopy. The SS shows temperature-dependent reconstruction corresponding to the Kondo effect observed for bulk states. Despite the low-temperature insulating bulk, the reconstructed SS with c-f hybridization is metallic, forming a closed Fermi contour surrounding on the surface Brillouin zone and agreeing with the theoretically expected behaviour for SS on TKIs. These results demonstrate the temperature-dependent holistic reconstruction of two-dimensional states localized on KIs surface driven by the Kondo effect. PMID:27576449

  1. Surface Kondo effect and non-trivial metallic state of the Kondo insulator YbB12

    NASA Astrophysics Data System (ADS)

    Hagiwara, Kenta; Ohtsubo, Yoshiyuki; Matsunami, Masaharu; Ideta, Shin-Ichiro; Tanaka, Kiyohisa; Miyazaki, Hidetoshi; Rault, Julien E.; Fèvre, Patrick Le; Bertran, François; Taleb-Ibrahimi, Amina; Yukawa, Ryu; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Sumida, Kazuki; Okuda, Taichi; Iga, Fumitoshi; Kimura, Shin-Ichi

    2016-08-01

    A synergistic effect between strong electron correlation and spin-orbit interaction has been theoretically predicted to realize new topological states of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6 has been actively discussed. Here, we show a metallic SS on the clean surface of another TKI candidate YbB12(001) using angle-resolved photoelectron spectroscopy. The SS shows temperature-dependent reconstruction corresponding to the Kondo effect observed for bulk states. Despite the low-temperature insulating bulk, the reconstructed SS with c-f hybridization is metallic, forming a closed Fermi contour surrounding on the surface Brillouin zone and agreeing with the theoretically expected behaviour for SS on TKIs. These results demonstrate the temperature-dependent holistic reconstruction of two-dimensional states localized on KIs surface driven by the Kondo effect.

  2. Kondo effect in magnetic tunnel junctions with an AlOx tunnel barrier

    NASA Astrophysics Data System (ADS)

    Zheng, Chao; Shull, Robert D.; Chen, P. J.; Pong, Philip W. T.

    2016-06-01

    The influence of the magnetization configuration on the Kondo effect in a magnetic tunnel junction is investigated. In the parallel configuration, an additional resistance contribution (R*) below 40 K exhibits a logarithmic temperature dependence, indicating the presence of the Kondo effect. However, in the anti-parallel configuration, the Kondo-effect-associated spin-flip scattering has a nontrivial contribution to the tunneling current, which compensates the reduction of the current directly caused by Kondo scattering, making R* disappear. These results indicate that suppression and restoration of the Kondo effect can be experimentally achieved by altering the magnetization configuration, enhancing our understanding of the role of the Kondo effect in spin-dependent transport.

  3. Laser-Induced Kondo Effect in Ultracold Alkaline-Earth Fermions.

    PubMed

    Nakagawa, Masaya; Kawakami, Norio

    2015-10-16

    We demonstrate that laser excitations can coherently induce a novel Kondo effect in ultracold atoms in optical lattices. Using a model of alkaline-earth fermions with two orbitals, it is shown that the optically coupled two internal states are dynamically entangled to form the Kondo-singlet state, overcoming the heating effect due to the irradiation. Furthermore, a lack of SU(N) symmetry in the optical coupling provides a peculiar feature in the Kondo effect, which results in spin-selective renormalization of effective masses. We also discuss the effects of interorbital exchange interactions, and reveal that they induce novel crossover or reentrant behavior of the Kondo effect owing to control of the coupling anisotropy. The laser-induced Kondo effect is highly controllable by tuning the laser strength and the frequency, and thus offers a versatile platform to study the Kondo physics using ultracold atoms.

  4. Direct evidence for suppression of the Kondo effect due to pure spin current

    NASA Astrophysics Data System (ADS)

    Hamaya, K.; Kurokawa, T.; Oki, S.; Yamada, S.; Kanashima, T.; Taniyama, T.

    2016-10-01

    We study the effect of a pure spin current on the Kondo singlet in a diluted magnetic alloy using nonlocal lateral spin valve structures with highly spin polarized Co2FeSi electrodes. Temperature dependence of the nonlocal spin signals shows a sharp reduction with decreasing temperature, followed by a plateau corresponding to the low temperature Fermi liquid regime below the Kondo temperature (TK). The spin diffusion length of the Kondo alloy is found to increase with increasing spin accumulation. The results are in agreement with the intuitive description that the Kondo singlet cannot survive any more in sufficiently large spin accumulation even below TK.

  5. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  6. Kondo effect goes anisotropic in vanadate oxide superlattices

    NASA Astrophysics Data System (ADS)

    Rotella, H.; Pautrat, A.; Copie, O.; Boullay, P.; David, A.; Mercey, B.; Morales, M.; Prellier, W.

    2015-11-01

    We study the transport properties in SrVO3/LaVO3 (SVO/LVO) superlattices deposited on SrTiO3 (STO) substrates. We show that the electronic conduction occurs in the metallic LVO layers with a galvanomagnetism typical of a 2D Fermi surface. In addition, a Kondo-like component appears in both the thermal variation of resistivity and the magnetoresistance. Surprisingly, in this system where the STO interface does not contribute to the measured conduction, the Kondo correction is strongly anisotropic. We show that the growth temperature allows a direct control of this contribution. Finally, the key role of vanadium mixed valency stabilized by oxygen vacancies is enlightened.

  7. The Spin Glass-Kondo Competition in Disordered Cerium Systems

    NASA Astrophysics Data System (ADS)

    Magalhaes, S. G.; Zimmer, F.; Coqblin, B.

    2013-10-01

    We discuss the competition between the Kondo effect, the spin glass state and a magnetic order observed in disordered Cerium systems. We present firstly the experimental situation of disordered alloys such as CeNi1 - xCux and then the different theoretical approaches based on the Kondo lattice model, with different descriptions of the intersite exchange interaction for the spin glass. After the gaussian approach of the Sherrington-Kirkpatrick model, we discuss the Mattis and the van Hemmen models. Then, we present simple cluster calculations in order to describe the percolative evolution of the clusters from the cluster spin glass to the inhomogeneous ferromagnetic order recently observed in CeNi1 - xCux disordered alloys and finally we discuss the effect of random and transverse magnetic field.

  8. Macroscopic quantum entanglement of a Kondo cloud at finite temperature.

    PubMed

    Lee, S-S B; Park, Jinhong; Sim, H-S

    2015-02-01

    We propose a variational approach for computing the macroscopic entanglement in a many-body mixed state, based on entanglement witness operators, and compute the entanglement of formation (EoF), a mixed-state generalization of the entanglement entropy, in single- and two-channel Kondo systems at finite temperature. The thermal suppression of the EoF obeys power-law scaling at low temperature. The scaling exponent is halved from the single- to the two-channel system, which is attributed, using a bosonization method, to the non-Fermi liquid behavior of a Majorana fermion, a "half" of a complex fermion, emerging in the two-channel system. Moreover, the EoF characterizes the size and power-law tail of the Kondo screening cloud of the single-channel system.

  9. Characterization of a correlated topological Kondo insulator in one dimension

    NASA Astrophysics Data System (ADS)

    Hagymási, I.; Legeza, Ö.

    2016-04-01

    We investigate the ground state of a p -wave Kondo-Heisenberg model introduced by Alexandrov and Coleman with an Ising-type anisotropy in the Kondo interaction and correlated conduction electrons. Our aim is to understand how they affect the stability of the Haldane state obtained in the SU(2)-symmetric case without the Hubbard interaction. By applying the density-matrix renormalization group algorithm and calculating the entanglement entropy we show that in the anisotropic case a phase transition occurs and a Néel state emerges above a critical value of the Coulomb interaction. These findings are also corroborated by the examination of the entanglement spectrum and the spin profile of the system which clarify the structure of each phase.

  10. Kondo and Majorana doublet interactions in quantum dots

    NASA Astrophysics Data System (ADS)

    Kim, Younghyun; Liu, Dong E.; Gaidamauskas, Erikas; Paaske, Jens; Flensberg, Karsten; Lutchyn, Roman

    We study the properties of a quantum dot coupled to a normal lead and a time-reversal topological superconductor with Majorana Kramers pair at the end. We explore the phase diagram of the system as a function of Kondo and Majorana-induced coupling strengths using perturbative renormalization group study and slave-boson mean-field theory. We find that, in the presence of coupling between a quantum dot and a Majorana doublet, the system flows to a new fixed point controlled by the Majorana doublet, rather than the Kondo coupling, which is characterized by correlations between a localized spin and the fermion parity of each spin sector of the topological superconductor. We find that this fixed point is stable with respect to Gaussian fluctuations. We also investigate the effect of spin-spin interaction between a quantum dot and Majorana doublet and compare the result with a case where a normal lead is directly coupled to Majorana doublet.

  11. Multiorbital Kondo physics of Co in Cu hosts

    NASA Astrophysics Data System (ADS)

    Surer, Brigitte; Troyer, Matthias; Werner, Philipp; Wehling, Tim O.; Läuchli, Andreas M.; Wilhelm, Aljoscha; Lichtenstein, Alexander I.

    2012-02-01

    We investigate the electronic structure of cobalt atoms on a copper surface and in a copper host by combining density-functional calculations with a numerically exact continuous-time quantum Monte Carlo treatment of the five-orbital impurity problem. In both cases we find low energy resonances in the density of states of all five Co d orbitals. The corresponding self-energies indicate the formation of a Fermi liquid state at low temperatures. Our calculations yield the characteristic energy scale—the Kondo temperature—for both systems in good agreement with experiments. We quantify the charge fluctuations in both geometries and suggest that Co in Cu must be described by an Anderson impurity model rather than by a model assuming frozen impurity valency at low energies. We show that fluctuations of the orbital degrees of freedom are crucial for explaining the Kondo temperatures obtained in our calculations and measured in experiments.

  12. Multi-orbital Kondo physics of Co in Cu hosts

    NASA Astrophysics Data System (ADS)

    Lichtenstein, Alexander; Wehling, Tim Oliver; Wilhelm, Aljoscha; Surer, Brigitte; Troyer, Matthias; Werner, Philipp; Läuchli, Andreas

    2012-02-01

    We investigate the electronic structure of cobalt atoms on a copper surface and in a copper host by combining density functional calculations with a numerically exact continuous-time quantum Monte Carlo treatment of the five-orbital impurity problem. In both cases we find low energy resonances in the density of states of all five Co d-orbitals. The corresponding self-energies indicate the formation of a Fermi liquid state at low temperatures. Our calculations yield the characteristic energy scale -- the Kondo temperature -- for both systems in good agreement with experiments. We quantify the charge fluctuations in both geometries and suggest that Co in Cu must be described by an Anderson impurity model rather than by a model assuming frozen impurity valency at low energies. We show that fluctuations of the orbital degrees of freedom are crucial for explaining the Kondo temperatures obtained in our calculations and measured in experiments.

  13. Neutron scattering from the Kondo Insulator SmB6

    NASA Astrophysics Data System (ADS)

    Broholm, Collin

    A review of neutron scattering work probing the Kondo insulator SmB6 is presented with special emphasis on assessing the topology of the underlying strongly renormalized band structure. A 14 meV excition dominates the spectrum and is evidence of strong electron correlations [1]. Though the data generally supports the proposal that SmB6 is a topological Kondo insulator, specific heat and high-resolution neutron scattering data show a continuum of states well below the bulk transport gap, which enrich the problem and may connect to the recent surprising de Haas van Alpen results. ``Interaction Driven Subgap Spin Exciton in the Kondo Insulator SmB6,'' W. T. Fuhrman, J. Leiner, P. Nikolic, G. E. Granroth, M. B. Stone, M. D. Lumsden, L. DeBeer-Schmitt, P. A. Alekseev, J.-M. Mignot, S. M. Koohpayeh, P. Cottingham, W. Adam Phelan, L. Schoop, T. M. McQueen, and C. Broholm, Phys. Rev. Lett. 114, 036401 (2015). Supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Material Sciences and Engineering, under Grant No. DEFG02-08ER46544 and the Gordon and Betty Moore Foundation.

  14. Conductance fingerprint of Majorana fermions in the topological Kondo effect

    NASA Astrophysics Data System (ADS)

    Galpin, Martin R.; Mitchell, Andrew K.; Temaismithi, Jesada; Logan, David E.; Béri, Benjamin; Cooper, Nigel R.

    2014-01-01

    We consider an interacting nanowire/superconductor heterostructure attached to metallic leads. The device is described by an unusual low-energy model involving spin-1 conduction electrons coupled to a nonlocal spin-1/2 Kondo impurity built from Majorana fermions. The topological origin of the resulting Kondo effect is manifest in distinctive non-Fermi-liquid (NFL) behavior, and the existence of Majorana fermions in the device is demonstrated unambiguously by distinctive conductance line shapes. We study the physics of the model in detail, using the numerical renormalization group, perturbative scaling, and Abelian bosonization. In particular, we calculate the full scaling curves for the differential conductance in ac and dc fields, onto which experimental data should collapse. Scattering t matrices and thermodynamic quantities are also calculated, recovering asymptotes from conformal field theory. We show that the NFL physics is robust to asymmetric Majorana-lead couplings, and here we uncover a duality between strong and weak coupling. The NFL behavior is understood physically in terms of competing Kondo effects. The resulting frustration is relieved by inter-Majorana coupling which generates a second crossover to a regular Fermi liquid.

  15. Kondo physics from quasiparticle poisoning in Majorana devices

    NASA Astrophysics Data System (ADS)

    Plugge, S.; Zazunov, A.; Eriksson, E.; Tsvelik, A. M.; Egger, R.

    2016-03-01

    We present a theoretical analysis of quasiparticle poisoning in Coulomb-blockaded Majorana fermion systems tunnel-coupled to normal-conducting leads. Taking into account finite-energy quasiparticles, we derive the effective low-energy theory and present a renormalization group analysis. We find qualitatively new effects when a quasiparticle state with very low energy is localized near a tunnel contact. For M =2 attached leads, such "dangerous" quasiparticle poisoning processes cause a spin S =1 /2 single-channel Kondo effect, which can be detected through a characteristic zero-bias anomaly conductance peak in all Coulomb blockade valleys. For more than two attached leads, the topological Kondo effect of the unpoisoned system becomes unstable. A strong-coupling bosonization analysis indicates that at low energy the poisoned lead is effectively decoupled and hence, for M >3 , the topological Kondo fixed point re-emerges, though now it involves only M -1 leads. As a consequence, for M =3 , the low-energy fixed point becomes trivial corresponding to decoupled leads.

  16. Kondo physics from quasiparticle poisoning in Majorana devices

    DOE PAGES

    Plugge, S.; Tsvelik, A. M.; Zazunov, A.; Eriksson, E.; Egger, R.

    2016-03-24

    Here, we present a theoretical analysis of quasiparticle poisoning in Coulomb-blockaded Majorana fermion systems tunnel-coupled to normal-conducting leads. Taking into account finite-energy quasiparticles, we derive the effective low-energy theory and present a renormalization group analysis. We find qualitatively new effects when a quasiparticle state with very low energy is localized near a tunnel contact. For M = 2 attached leads, such “dangerous” quasiparticle poisoning processes cause a spin S = 1/2 single-channel Kondo effect, which can be detected through a characteristic zero-bias anomaly conductance peak in all Coulomb blockade valleys. For more than two attached leads, the topological Kondo effectmore » of the unpoisoned system becomes unstable. A strong-coupling bosonization analysis indicates that at low energy the poisoned lead is effectively decoupled and hence, for M > 3, the topological Kondo fixed point re-emerges, though now it involves only M–1 leads. As a consequence, for M = 3, the low-energy fixed point becomes trivial corresponding to decoupled leads.« less

  17. Optical Study of Interactions in a d-Electron Kondo Lattice with Ferromagnetism

    SciTech Connect

    Burch, K. S.; Schafgans, A.; Butch, N. P.; Sayles, T. A.; Maple, M. B.; Sales, Brian C; Mandrus, David; Basov, D. N.

    2005-01-01

    We report on a comprehensive optical, transport, and thermodynamic study of the Zintl compound Yb{sub 14}MnSb{sub 11}, demonstrating that it is the first ferromagnetic Kondo lattice compound in the underscreened limit. We propose a scenario whereby the combination of Kondo and Jahn-Teller effects provides a consistent explanation of both transport and optical data.

  18. Quantum phase transitions and anomalous Hall effect in a pyrochlore Kondo lattice

    NASA Astrophysics Data System (ADS)

    Grefe, Sarah; Ding, Wenxin; Si, Qimiao

    The metallic variant of the pyrochlore iridates Pr2Ir2O7 has shown characteristics of a possible chiral spin liquid state [PRL 96 087204 (2006), PRL 98, 057203 (2007), Nature 463, 210 (2010)] and quantum criticality [Nat. Mater. 13, 356 (2014)]. An important question surrounding the significant anomalous Hall response observed in Pr2Ir2O7 is the nature of the f-electron local moments, including their Kondo coupling with the conduction d-electrons. The heavy effective mass and related thermodynamic characteristics indicate the involvement of the Kondo effect in this system's electronic properties. In this work, we study the effects of Kondo coupling on candidate time-reversal-symmetry-breaking spin liquid states on the pyrochlore lattice. Representing the f-moments as slave fermions Kondo-coupled to conduction electrons, we study the competition between Kondo-singlet formation and chiral spin correlations and determine the zero-temperature phase diagram. We derive an effective chiral interaction between the local moments and the conduction electrons and calculate the anomalous Hall response across the quantum phase transition from the Kondo destroyed phase to the Kondo screened phase. We discuss our results' implications for Pr2Ir2O7 and related frustrated Kondo-lattice systems.

  19. Valley blockade and multielectron spin-valley Kondo effect in silicon

    NASA Astrophysics Data System (ADS)

    Crippa, A.; Tagliaferri, M. L. V.; Rotta, D.; De Michielis, M.; Mazzeo, G.; Fanciulli, M.; Wacquez, R.; Vinet, M.; Prati, E.

    2015-07-01

    We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nanofield effect device. According to the spin-valley nature of tunneling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect at occupation N =1 ,2 ,3 has the periodicity 4 of the electron filling sequence typical of silicon. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced with no need of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.

  20. Scanning tunneling spectroscopy of a magnetic atom on graphene in the Kondo regime

    DOE PAGES

    Zhuang, Huai -Bin; Sun, Qing -feng; Xie, X. C.

    2009-06-23

    In this study, the Kondo effect in the system consisting of a magnetic adatom on the graphene is studied. By using the non-equilibrium Green function method with the slave-boson mean field approximation, the local density of state (LDOS) and the conductance are calculated. For a doped graphene, the Kondo phase is present at all time. Surprisingly, two kinds of Kondo regimes are revealed. But for the undoped graphene, the Kondo phase only exists if the adatom’s energy level is beyond a critical value. The conductance is similar to the LDOS, thus, the Kondo peak in the LDOS can be observedmore » with the scanning tunneling spectroscopy. In addition, in the presence of a direct coupling between the STM tip and the graphene, the conductance may be dramatically enhanced, depending on the coupling site.« less

  1. Scanning tunneling spectroscopy of a magnetic atom on graphene in the Kondo regime

    SciTech Connect

    Zhuang, Huai -Bin; Sun, Qing -feng; Xie, X. C.

    2009-06-23

    In this study, the Kondo effect in the system consisting of a magnetic adatom on the graphene is studied. By using the non-equilibrium Green function method with the slave-boson mean field approximation, the local density of state (LDOS) and the conductance are calculated. For a doped graphene, the Kondo phase is present at all time. Surprisingly, two kinds of Kondo regimes are revealed. But for the undoped graphene, the Kondo phase only exists if the adatom’s energy level is beyond a critical value. The conductance is similar to the LDOS, thus, the Kondo peak in the LDOS can be observed with the scanning tunneling spectroscopy. In addition, in the presence of a direct coupling between the STM tip and the graphene, the conductance may be dramatically enhanced, depending on the coupling site.

  2. Strong suppression of superconductivity by divalent ytterbium Kondo holes in CeCoIn5

    NASA Astrophysics Data System (ADS)

    Shimozawa, M.; Watashige, T.; Yasumoto, S.; Mizukami, Y.; Nakamura, M.; Shishido, H.; Goh, S. K.; Terashima, T.; Shibauchi, T.; Matsuda, Y.

    2012-10-01

    To study the nature of partially substituted Yb ions in a Ce-based Kondo lattice, we fabricated high quality Ce1-xYbxCoIn5 epitaxial thin films using molecular beam epitaxy. We find that the Yb substitution leads to a linear decrease of the unit cell volume—indicating that Yb ions are divalent, forming Kondo holes in Ce1-xYbxCoIn5—and leads to a strong suppression of the superconductivity and Kondo coherence. These results, combined with measurements of the Hall effect, indicate that Yb ions act as nonmagnetic impurity scatterers in the coherent Kondo lattice without serious suppression of the antiferromagnetic fluctuations. These results are in stark contrast to previous studies performed using bulk single crystals, which claim the importance of valence fluctuations of Yb ions. The present work also highlights the suitability of epitaxial films in the study of the impurity effect on the Kondo lattice.

  3. From four- to two-channel Kondo effect in junctions of XY spin chains

    NASA Astrophysics Data System (ADS)

    Giuliano, Domenico; Sodano, Pasquale; Tagliacozzo, Arturo; Trombettoni, Andrea

    2016-08-01

    We consider the Kondo effect in Y-junctions of anisotropic XY models in an applied magnetic field along the critical lines characterized by a gapless excitation spectrum. We find that, while the boundary interaction Hamiltonian describing the junction can be recasted in the form of a four-channel, spin-1/2 antiferromagnetic Kondo Hamiltonian, the number of channels effectively participating in the Kondo effect depends on the chain parameters, as well as on the boundary couplings at the junction. The system evolves from an effective four-channel topological Kondo effect for a junction of XX-chains with symmetric boundary couplings into a two-channel one at a junction of three quantum critical Ising chains. The effective number of Kondo channels depends on the properties of the boundary and of the bulk. The XX-line is a "critical" line, where a four-channel topological Kondo effect can be recovered by fine-tuning the boundary parameter, while along the line in parameter space connecting the XX-line and the critical Ising point the junction is effectively equivalent to a two-channel topological Kondo Hamiltonian. Using a renormalization group approach, we determine the flow of the boundary couplings, which allows us to define and estimate the critical couplings and Kondo temperatures of the different Kondo (pair) channels. Finally, we study the local transverse magnetization in the center of the Y-junction, eventually arguing that it provides an effective tool to monitor the onset of the two-channel Kondo effect.

  4. Thermal Signatures of The Kondo Volume Collapse in Cerium

    SciTech Connect

    Lipp, M; Jackson, D; Cynn, H; Aracne, C; Evans, W; McMahan, A

    2008-05-23

    X-ray diffraction measurements of cerium in the vicinity of the isostructural {gamma}-{alpha} transition have been performed with high precision and accuracy from room temperature to almost 800 K. The disputed location of the critical point has been found to occur at 1.5 {+-} 0.1 GPa and 480 {+-} 10 K. The data is well fit by the Kondo volume collapse model plus a quasiharmonic representation of the phonons. The resultant free energy is validated against data for the thermodynamic Grueneisen parameter, and beyond the dominant spin fluctuation contribution, indicates a dramatic change in the lattice Grueneisen parameter across the transition.

  5. Beam Kondo effect? — Possible anomalous penning deexcitation spectrum

    NASA Astrophysics Data System (ADS)

    Yoshimori, A.; Makoshi, K.

    1990-05-01

    It is shown that the Penning deexcitation spectrum of the triplet 2s excited helium atom beam at metal surfaces can have a threshold anomaly, which is the Kondo effect. The time-dependent Newns-Anderson model is used to analyze the transition rate of the deexcitation in the quasi-static approximation. The effect is due to the spin as well as potential scattering of conduction electrons by the He atom in the triplet excited state as the initial state interaction. Line shape of the Penning deexcitation spectrum is discussed, and clean surfaces of alkali metals are pointed out to be possible candidates to observe this many body effect.

  6. Application of the S=1 underscreened Anderson lattice model to Kondo uranium and neptunium compounds

    NASA Astrophysics Data System (ADS)

    Thomas, Christopher; da Rosa Simões, Acirete S.; Iglesias, J. R.; Lacroix, C.; Perkins, N. B.; Coqblin, B.

    2011-01-01

    Magnetic properties of uranium and neptunium compounds showing the coexistence of the Kondo screening effect and ferromagnetic order are investigated within the Anderson lattice Hamiltonian with a two-fold degenerate f level in each site, corresponding to 5f2 electronic configuration with S=1 spins. A derivation of the Schrieffer-Wolff transformation is presented and the resulting Hamiltonian has an effective f-band term, in addition to the regular exchange Kondo interaction between the S=1 f spins and the s=1/2 spins of the conduction electrons. The resulting effective Kondo lattice model can describe both the Kondo regime and a weak delocalization of the 5f electrons. Within this model we compute the Kondo and Curie temperatures as a function of model parameters, namely the Kondo exchange interaction constant JK, the magnetic intersite exchange interaction JH, and the effective f bandwidth. We deduce, therefore, a phase diagram of the model which yields the coexistence of the Kondo effect and ferromagnetic ordering and also accounts for the pressure dependence of the Curie temperature of uranium compounds such as UTe.

  7. Kondo effect with diverging hybridization: Possible realization in graphene with vacancies

    NASA Astrophysics Data System (ADS)

    Mitchell, Andrew K.; Fritz, Lars

    2013-08-01

    We investigate Kondo physics in a host with a strongly diverging density of states. This study is motivated by a recent work on vacancies in the graphene honeycomb lattice, whose density of states is enhanced at low energies due to potential scattering. The generalized quantum impurity model describing the vacancy is shown to support a spin-(1)/(2) (doublet) Kondo phase. The special role played by a diverging host density of states is examined in detail, with distinctive signatures associated with the power law Kondo effect shown to appear in thermodynamic quantities and the scattering t matrix, with a strongly enhanced Kondo temperature. Although the effective Kondo model supports a stable phase characterized by strong renormalized particle-hole asymmetry, we find that this phase cannot in fact be accessed in the full Anderson model. In the more realistic case, where the divergence in the host density of states is cut off at low energies, a crossover is generated between pristine power law Kondo physics and a regular Kondo strong coupling state.

  8. Kondo physics in a rare earth ion with well localized 4f electrons.

    PubMed

    Stankiewicz, Jolanta; Evangelisti, Marco; Fisk, Zachary; Schlottmann, Pedro; Gor'kov, Lev P

    2012-06-22

    Dilute Nd in simple cubic LaB(6) shows electrical resistance and specific heat features at low temperature consistent with a Kondo scale of T(K) Kondo coupled to the conduction electrons in LaB(6). We conjecture that the unexpected Kondo effect arises via participation of 4f quadrupolar degrees of freedom of the Nd crystal-field, ground-state quartet.

  9. Kondo Resonance of a Co Atom Exchange Coupled to a Ferromagnetic Tip

    NASA Astrophysics Data System (ADS)

    Choi, D.-J.; Guissart, S.; Ormaza, M.; Bachellier, N.; Bengone, O.; Simon, P.; Limot, L.

    2016-10-01

    The Kondo effect of a Co atom on Cu(100) was investigated with a low-temperature scanning tunneling microscope using a monoatomically sharp nickel tip. Upon a tip-Co contact, the differential conductance spectra exhibit a spin-split asymmetric Kondo resonance. The computed ab initio value of the exchange coupling is too small to suppress the Kondo effect, but sufficiently large to produce the splitting observed. A quantitative analysis of the line shape using the numerical renormalization group technique indicates that the junction spin polarization is weak.

  10. Tunable Pseudogap Kondo Effect and Quantum Phase Transitions in Aharonov-Bohm Interferometers

    SciTech Connect

    Dias Da Silva, Luis G; Sandler, Nancy; Simon, Pascal; Ingersent, Kevin; Ulloa, Sergio E

    2009-01-01

    We study two quantum dots embedded in the arms of an Aharonov-Bohm ring threaded by a magnetic flux. This system can be described by an effective one-impurity Anderson model with an energy- and flux- dependent density of states. For specific values of the flux, this density of states vanishes at the Fermi energy, yielding a controlled realization of the pseudogap Kondo effect. The conductance and trans- mission phase shifts reflect a nontrivial interplay between wave interference and interactions, providing clear signatures of quantum phase transitions between Kondo and non-Kondo ground states.

  11. Spin fluctations and heavy fermions in the Kondo lattice

    SciTech Connect

    Khaliullin, G.G.

    1994-09-01

    This paper studies the spectrum of the spin and electronic excitations of the Kondo lattice at low temperatures. To avoid unphysical states, the Mattis {open_quotes}drone{close_quotes}-fermion representation for localized spins is employed. First, the known Fermi liquid properties of a single impurity are examined. The behavior of the correlator between a localized spin and the electron spin density at large distances shows that the effective interaction between electrons on the Fermi level and low-energy localized spin fluctuations scales as {rho}{sup {minus}1}, where {rho} is the band-state density. This fact is developed into a renormalization of the band spectrum in a periodic lattice. If the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between localized spins is much smaller than the Kondo fluctuation frequency {omega}{sub k}, the temperature of the crossover to the single-parameter Fermi liquid mode is determined by {omega}{sub k}. When the RKKY interaction becomes of order {omega}{sub k}, there is a new scale {omega}{sub sf}, the energy of the (antiferromagnetic) paramagnon mode, with {omega}{sub sf}{much_lt}{omega}{sub k}. Here the coherent Fermi liquid regime is realized only below a temperature T{sub coh} of order {omega}{sub sf}, while above T{sub coh} quasiparticle damping exhibits a linear temperature dependence. Finally, the nuclear-spin relaxation rate is calculated. 42 refs.

  12. Kondo bahavior in antiferromagnetic NpPdSn

    NASA Astrophysics Data System (ADS)

    Shrestha, K.; Prokes, K.; Griveau, J.-C.; Jardin, R.; Colineau, E.; Caciuffo, R.; Eloirdi, R.; Gofryk, K.

    Actinide-based intermetallics show a large variety of exotic physical phenomena mainly coming from 5f hybridization with both on-site and neighboring ligand states. Depending on the strength of these process unusual behaviors such as long-range magnetic order, Kondo effect, heavy-fermion ground state, valence fluctuations, and/or superconductivity have been observed. Here we report results of our extensive studies on NpPdSn. The compound crystalizes in hexagonal ZrNiAl-type of crystal structure and is studied by means of x-ray and neutron diffraction, magnetization, heat capacity, electrical resistivity, and thermoelectric power measurements, performed over a wide range of temperatures and applied magnetic fields. All the results revealed Kondo lattice behavior and antiferromagnetic ordering below 19 K. NpPdSn can be classified as a moderately enhanced heavy-fermion system, one of very few known amidst Np-based intermetallics. Work at Idaho National Laboratory was supported by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences, and Engineering Division.

  13. Holographic optical traps for atom-based topological Kondo devices

    NASA Astrophysics Data System (ADS)

    Buccheri, F.; Bruce, G. D.; Trombettoni, A.; Cassettari, D.; Babujian, H.; Korepin, V. E.; Sodano, P.

    2016-07-01

    The topological Kondo (TK) model has been proposed in solid-state quantum devices as a way to realize non-Fermi liquid behaviors in a controllable setting. Another motivation behind the TK model proposal is the demand to demonstrate the quantum dynamical properties of Majorana fermions, which are at the heart of their potential use in topological quantum computation. Here we consider a junction of crossed Tonks-Girardeau gases arranged in a star-geometry (forming a Y-junction), and we perform a theoretical analysis of this system showing that it provides a physical realization of the TK model in the realm of cold atom systems. Using computer-generated holography, we experimentally implement a Y-junction suitable for atom trapping, with controllable and independent parameters. The junction and the transverse size of the atom waveguides are of the order of 5 μm, leading to favorable estimates for the Kondo temperature and for the coupling across the junction. Since our results show that all the required theoretical and experimental ingredients are available, this provides the demonstration of an ultracold atom device that may in principle exhibit the TK effect.

  14. Quantum phase transitions in the Kondo-necklace model

    NASA Astrophysics Data System (ADS)

    Ghassemi, Nader; Hemmatiyan, Shayan; Rahimi Movassagh, Mahsa; Kargarian, Mahdi; Rezakhani, Ali T.; Langari, Abdollah

    2015-03-01

    Kondo-necklace model can describe the magnetic low-energy limit of strongly correlated heavy fermion materials. There exist multiple energy scales in this model corresponding to each phase of the system. Here, we study quantum phase transitions between these different phases, and show the effect of anisotropies in terms of quantum information properties and vanishing energy gap. We employ the perturbative unitary transformations to calculate the energy gap and spin-spin correlations for the model one, two, and three spatial dimensions as well as for the spin ladders. In particular, we show that the method, although being perturbative, can predict the expected quantum critical point by imposing the spontaneous symmetry breaking, which is in good agreement with the results of numerical and Green's function analyses. We also use concurrence, a bipartite entanglement measure, to study the criticality of the model. Absence of singularities in the derivative of the concurrence in 2d and 3d in Kondo-necklace model shows this model has multipartite entanglement. We also discuss the crossover from the one-dimensional to the two-dimensional model via the ladder structure. Sharif University of Technology.

  15. Phase diagram of the bosonic Kondo-Hubbard model

    SciTech Connect

    Foss-Feig, Michael; Rey, Ana Maria

    2011-11-15

    We study a bosonic version of the Kondo lattice model with an onsite repulsion in the conduction band, implemented with alkali-metal atoms in two bands of an optical lattice. Using both weak- and strong-coupling perturbation theory, we find that at unit filling of the conduction bosons the superfluid-to-Mott-insulator transition should be accompanied by a magnetic transition from a ferromagnet (in the superfluid) to a paramagnet (in the Mott insulator). Furthermore, an analytic treatment of Gutzwiller mean-field theory reveals that quantum spin fluctuations induced by the Kondo exchange cause the otherwise continuous superfluid-to-Mott-insulator phase transition to be first order. We show that lattice separability imposes a serious constraint on proposals to exploit excited bands for quantum simulations, and discuss a way to overcome this constraint in the context of our model by using an experimentally realized nonseparable lattice. A method to probe the first-order nature of the transition based on collapses and revivals of the matter-wave field is also discussed.

  16. Kondo route to spin inhomogeneities in the honeycomb Kitaev model

    NASA Astrophysics Data System (ADS)

    Das, S. D.; Dhochak, K.; Tripathi, V.

    2016-07-01

    Paramagnetic impurities in a quantum spin liquid give rise to Kondo effects with highly unusual properties. We have studied the effect of locally coupling a paramagnetic impurity with the spin-1/2 honeycomb Kitaev model in its gapless spin-liquid phase. The (impurity) scaling equations are found to be insensitive to the sign of the coupling. The weak and strong coupling fixed points are stable, with the latter corresponding to a noninteracting vacancy and an interacting, spin-1 defect for the antiferromagnetic and ferromagnetic cases, respectively. The ground state in the strong coupling limit in both cases has a nontrivial topology associated with a finite Z2 flux at the impurity site. For the antiferromagnetic case, this result has been obtained straightforwardly owing to the integrability of the Kitaev model with a vacancy. The strong-coupling limit of the ferromagnetic case is, however, nonintegrable, and we address this problem through exact-diagonalization calculations with finite Kitaev fragments. Our exact diagonalization calculations indicate that the weak-to-strong coupling transition and the topological phase transition occur rather close to each other and are possibly coincident. We also find an intriguing similarity between the magnetic response of the defect and the impurity susceptibility in the two-channel Kondo problem.

  17. Holographic optical traps for atom-based topological Kondo devices

    NASA Astrophysics Data System (ADS)

    Buccheri, F.; Bruce, G. D.; Trombettoni, A.; Cassettari, D.; Babujian, H.; Korepin, V. E.; Sodano, P.

    2016-07-01

    The topological Kondo (TK) model has been proposed in solid-state quantum devices as a way to realize non-Fermi liquid behaviors in a controllable setting. Another motivation behind the TK model proposal is the demand to demonstrate the quantum dynamical properties of Majorana fermions, which are at the heart of their potential use in topological quantum computation. Here we consider a junction of crossed Tonks–Girardeau gases arranged in a star-geometry (forming a Y-junction), and we perform a theoretical analysis of this system showing that it provides a physical realization of the TK model in the realm of cold atom systems. Using computer-generated holography, we experimentally implement a Y-junction suitable for atom trapping, with controllable and independent parameters. The junction and the transverse size of the atom waveguides are of the order of 5 μm, leading to favorable estimates for the Kondo temperature and for the coupling across the junction. Since our results show that all the required theoretical and experimental ingredients are available, this provides the demonstration of an ultracold atom device that may in principle exhibit the TK effect.

  18. Magnetic-field-modulated Kondo effect in a single-magnetic-ion molecule

    NASA Astrophysics Data System (ADS)

    Romero, Javier I.; Vernek, E.; Martins, G. B.; Mucciolo, E. R.

    2014-11-01

    We study numerically the low-temperature electronic transport properties of a single-ion magnet with uniaxial and transverse spin anisotropies. We find clear signatures of a Kondo effect caused by the presence of a transverse (zero-field) anisotropy in the molecule. This Kondo effect has an SU(2) pseudospin character, associated with a doublet ground state of the isolated molecule, which results from the transverse anisotropy. Upon applying a transverse magnetic field to the single-ion magnet, we observe oscillations of the Kondo effect due to the presence of diabolical points (degeneracies) of the energy spectrum of the molecule caused by geometrical phase interference effects, similar to those observed in the quantum tunneling of multi-ion molecular nanomagnets. The field-induced lifting of the ground-state degeneracy competes with the interference modulation, resulting in some cases in a suppression of the Kondo peak.

  19. Blocking transport resonances via Kondo many-body entanglement in quantum dots

    NASA Astrophysics Data System (ADS)

    Niklas, Michael; Smirnov, Sergey; Mantelli, Davide; Margańska, Magdalena; Nguyen, Ngoc-Viet; Wernsdorfer, Wolfgang; Cleuziou, Jean-Pierre; Grifoni, Milena

    2016-08-01

    Many-body entanglement is at the heart of the Kondo effect, which has its hallmark in quantum dots as a zero-bias conductance peak at low temperatures. It signals the emergence of a conducting singlet state formed by a localized dot degree of freedom and conduction electrons. Carbon nanotubes offer the possibility to study the emergence of the Kondo entanglement by tuning many-body correlations with a gate voltage. Here we show another side of Kondo correlations, which counterintuitively tend to block conduction channels: inelastic co-tunnelling lines in the magnetospectrum of a carbon nanotube strikingly disappear when tuning the gate voltage. Considering the global SU(2) \\xotime SU(2) symmetry of a nanotube coupled to leads, we find that only resonances involving flips of the Kramers pseudospins, associated to this symmetry, are observed at temperatures and voltages below the corresponding Kondo scale. Our results demonstrate the robust formation of entangled many-body states with no net pseudospin.

  20. Surface-State Spin Textures and Mirror Chern Numbers in Topological Kondo Insulators.

    PubMed

    Legner, Markus; Rüegg, Andreas; Sigrist, Manfred

    2015-10-01

    The recent discovery of topological Kondo insulators has triggered renewed interest in the well-known Kondo insulator samarium hexaboride, which is hypothesized to belong to this family. In this Letter, we study the spin texture of the topologically protected surface states in such a topological Kondo insulator. In particular, we derive close relationships between (i) the form of the hybridization matrix at certain high-symmetry points, (ii) the mirror Chern numbers of the system, and (iii) the observable spin texture of the topological surface states. In this way, a robust classification of topological Kondo insulators and their surface-state spin texture is achieved. We underpin our findings with numerical calculations of several simplified and realistic models for systems like samarium hexaboride.

  1. Measurement of Valley Kondo Effect in a Si/SiGe Quantum Dot

    NASA Astrophysics Data System (ADS)

    Yuan, Mingyun; Yang, Zhen; Tang, Chunyang; Rimberg, A. J.; Joynt, R.; Savage, D. E.; Lagally, M. G.; Eriksson, M. A.

    2013-03-01

    The Kondo effect in Si/SiGe QDs can be enriched by the valley degree of freedom in Si. We have observed resonances showing temperature dependence characteristic of the Kondo effect in two consecutive Coulomb diamonds. These resonances exhibit unusual magnetic field dependence that we interpret as arising from Kondo screening of the valley degree of freedom. In one diamond two Kondo peaks due to screening of the valley index exist at zero magnetic field, revealing a zero-field valley splitting of Δ ~ 0.28 meV. In a non-zero magnetic field the peaks broaden and coalesce due to Zeeman splitting. In the other diamond, a single resonance at zero bias persists without Zeeman splitting for non-zero magnetic field, a phenomenon characteristic of valley non-conservation in tunneling. This research is supported by the NSA and ARO.

  2. Maximized orbital and spin Kondo effect in a single electron box

    NASA Astrophysics Data System (ADS)

    Le Hur, Karyn

    2004-03-01

    We investigate the charge fluctuations of a metallic grain (large dot) coupled to a bank of electrons via a smaller dot in the Kondo regime. The most interesting aspect of this problem resides in the interplay between "spin" Kondo physics stemming from the screening of the spin of the small dot, and "orbital" Kondo effect emerging when charging states of the grain with (charge) Q=0 and Q=e are almost degenerate. We emphasize that for symmetric or slightly asymmetric tunneling barriers, the strong entanglement of charge and spin flips results in a fascinating Kondo liquid with SU(4) symmetry. This considerably smears out the Coulomb staircase behavior of the grain's charge already in the weak tunneling regime. Different crossovers and experimental consequences will be addressed. Refs: K. Le Hur and P. Simon, PRB 67, R201308 (2003); K. Le Hur, P. Simon, and L. Borda, cond-mat/0306186 (to appear in PRB)

  3. The Kondo temperature of a two-dimensional electron gas with Rashba spin-orbit coupling.

    PubMed

    Chen, Liang; Sun, Jinhua; Tang, Ho-Kin; Lin, Hai-Qing

    2016-10-01

    We use the Hirsch-Fye quantum Monte Carlo method to study the single magnetic impurity problem in a two-dimensional electron gas with Rashba spin-orbit coupling. We calculate the spin susceptibility for various values of spin-orbit coupling, Hubbard interaction, and chemical potential. The Kondo temperatures for different parameters are estimated by fitting the universal curves of spin susceptibility. We find that the Kondo temperature is almost a linear function of Rashba spin-orbit energy when the chemical potential is close to the edge of the conduction band. When the chemical potential is far away from the band edge, the Kondo temperature is independent of the spin-orbit coupling. These results demonstrate that, for single impurity problems in this system, the most important reason to change the Kondo temperature is the divergence of density of states near the band edge, and the divergence is induced by the Rashba spin-orbit coupling.

  4. Blocking transport resonances via Kondo many-body entanglement in quantum dots

    NASA Astrophysics Data System (ADS)

    Niklas, Michael; Smirnov, Sergey; Mantelli, Davide; Margańska, Magdalena; Nguyen, Ngoc-Viet; Wernsdorfer, Wolfgang; Cleuziou, Jean-Pierre; Grifoni, Milena

    2016-08-01

    Many-body entanglement is at the heart of the Kondo effect, which has its hallmark in quantum dots as a zero-bias conductance peak at low temperatures. It signals the emergence of a conducting singlet state formed by a localized dot degree of freedom and conduction electrons. Carbon nanotubes offer the possibility to study the emergence of the Kondo entanglement by tuning many-body correlations with a gate voltage. Here we show another side of Kondo correlations, which counterintuitively tend to block conduction channels: inelastic co-tunnelling lines in the magnetospectrum of a carbon nanotube strikingly disappear when tuning the gate voltage. Considering the global SU(2) ⨂ SU(2) symmetry of a nanotube coupled to leads, we find that only resonances involving flips of the Kramers pseudospins, associated to this symmetry, are observed at temperatures and voltages below the corresponding Kondo scale. Our results demonstrate the robust formation of entangled many-body states with no net pseudospin.

  5. Self-sustained oscillations in nanoelectromechanical systems induced by Kondo resonance

    NASA Astrophysics Data System (ADS)

    Song, Taegeun; Kiselev, Mikhail N.; Kikoin, Konstantin; Shekhter, Robert I.; Gorelik, Leonid Y.

    2014-03-01

    We investigate the instability and dynamical properties of nanoelectromechanical systems represented by a single-electron device containing movable quantum dots attached to a vibrating cantilever via asymmetric tunnel contacts. The Kondo resonance in electron tunneling between the source and shuttle facilitates self-sustained oscillations originating from the strong coupling of mechanical and electronic/spin degrees of freedom. We analyze a stability diagram for the two-channel Kondo shuttling regime due to limitations given by the electromotive force acting on a moving shuttle, and find that the saturation oscillation amplitude is associated with the retardation effect of the Kondo cloud. The results shed light on possible ways to experimentally realize the Kondo-cloud dynamical probe by using high mechanical dissipation tunability as well as supersensitive detection of mechanical displacement.

  6. Emergence of a Fermionic Finite-Temperature Critical Point in a Kondo Lattice.

    PubMed

    Chou, Po-Hao; Zhai, Liang-Jun; Chung, Chung-Hou; Mou, Chung-Yu; Lee, Ting-Kuo

    2016-04-29

    The underlying Dirac point is central to the profound physics manifested in a wide class of materials. However, it is often difficult to drive a system with Dirac points across the massless fermionic critical point. Here by exploiting screening of local moments under spin-orbit interactions in a Kondo lattice, we show that below the Kondo temperature, the Kondo lattice undergoes a topological transition from a strong topological insulator to a weak topological insulator at a finite temperature T_{D}. At T_{D}, massless Dirac points emerge and the Kondo lattice becomes a Dirac semimetal. Our analysis indicates that the emergent relativistic symmetry dictates nontrivial thermal responses over large parameter and temperature regimes. In particular, it yields critical scaling behaviors both in magnetic and transport responses near T_{D}.

  7. Emergence of a Fermionic Finite-Temperature Critical Point in a Kondo Lattice

    NASA Astrophysics Data System (ADS)

    Chou, Po-Hao; Zhai, Liang-Jun; Chung, Chung-Hou; Mou, Chung-Yu; Lee, Ting-Kuo

    2016-04-01

    The underlying Dirac point is central to the profound physics manifested in a wide class of materials. However, it is often difficult to drive a system with Dirac points across the massless fermionic critical point. Here by exploiting screening of local moments under spin-orbit interactions in a Kondo lattice, we show that below the Kondo temperature, the Kondo lattice undergoes a topological transition from a strong topological insulator to a weak topological insulator at a finite temperature TD. At TD, massless Dirac points emerge and the Kondo lattice becomes a Dirac semimetal. Our analysis indicates that the emergent relativistic symmetry dictates nontrivial thermal responses over large parameter and temperature regimes. In particular, it yields critical scaling behaviors both in magnetic and transport responses near TD.

  8. Probing the Kondo lattice model with alkaline-earth-metal atoms

    SciTech Connect

    Foss-Feig, Michael; Hermele, Michael; Rey, Ana Maria

    2010-05-15

    We study transport properties of alkaline-earth-metal atoms governed by the Kondo lattice Hamiltonian plus a harmonic confining potential, and suggest simple dynamical probes of several different regimes of the phase diagram that can be implemented with current experimental techniques. In particular, we show how Kondo physics at strong coupling, at low density, and in the heavy fermion phase is manifest in the dipole oscillations of the conduction band upon displacement of the trap center.

  9. Fractionalized Fermi liquid on the surface of a topological Kondo insulator

    NASA Astrophysics Data System (ADS)

    Thomson, Alex; Sachdev, Subir

    2016-03-01

    We argue that topological Kondo insulators can also have "intrinsic" topological order associated with fractionalized excitations on their surfaces. The hybridization between the local moments and conduction electrons can weaken near the surface, and this enables the local moments to form spin liquids. This coexists with the conduction electron surface states, realizing a surface fractionalized Fermi liquid. We present mean-field solutions of a Kondo-Heisenberg model in two spatial dimensions which display such surfaces.

  10. Kondo effect in a quantum dot side-coupled to a topological superconductor

    NASA Astrophysics Data System (ADS)

    Lee, Minchul; Lim, Jong Soo; López, Rosa

    2013-06-01

    We investigate the dynamical and transport features of a Kondo dot side coupled to a topological superconductor (TS). The Majorana fermion states (MFSs) formed at the ends of the TS are found to be able to alter the Kondo physics profoundly: For an infinitely long wire where the MFSs do not overlap (ɛm=0) a finite dot-MFS coupling (Γm) reduces the unitary-limit value of the linear conductance by exactly a factor 3/4 in the weak-coupling regime (ΓmKondo temperature. In the strong-coupling regime (Γm>TK), on the other hand, the spin-split Kondo resonance takes place due to the MFS-induced Zeeman splitting, which is a genuine many-body effect of the strong Coulomb interaction and the topological superconductivity. We find that the original Kondo resonance is fully restored once the MFSs are strongly hybridized (ɛm>Γm). This unusual interaction between the Kondo effect and the MFS can thus serve to detect the Majorana fermions unambiguously and quantify the degree of overlap between the MFSs in the TS.

  11. Local susceptibility and Kondo scaling in the presence of finite bandwidth

    NASA Astrophysics Data System (ADS)

    Hanl, Markus; Weichselbaum, Andreas

    2014-02-01

    The Kondo scale TK for impurity systems is expected to guarantee universal scaling of physical quantities. However, in practice, not every definition of TK necessarily supports this notion away from the strict scaling limit. Specifically, this paper addresses the role of finite bandwidth D in the strongly correlated Kondo regime. For this, various theoretical definitions of TK are analyzed based on the inverse magnetic impurity susceptibility at zero temperature. While conventional definitions in that respect quickly fail to ensure universal Kondo scaling for a large range of D, this paper proposes an altered definition of TKsc that allows universal scaling of dynamical or thermal quantities for a given fixed Hamiltonian. If the scaling is performed with respect to an external parameter that directly enters the Hamiltonian, such as magnetic field, the corresponding TKsc,B for universal scaling differs, yet becomes equivalent to TKsc in the scaling limit. The only requirement for universal scaling in the full Kondo parameter regime with a residual error of less than 1% is a well-defined isolated Kondo feature with TK≲0.01D irrespective of specific other impurity parameter settings. By varying D over a wide range relative to the bare energies of the impurity, for example, this allows a smooth transition from the Anderson to the Kondo model.

  12. Controlling orbital-selective Kondo effects in a single molecule through coordination chemistry

    SciTech Connect

    Tsukahara, Noriyuki; Kawai, Maki; Takagi, Noriaki; Minamitani, Emi; Kim, Yousoo

    2014-08-07

    Iron(II) phthalocyanine (FePc) molecule causes novel Kondo effects derived from the unique electronic structure of multi-spins and multi-orbitals when attached to Au(111). Two unpaired electrons in the d{sub z}{sup 2} and the degenerate dπ orbitals are screened stepwise, resulting in spin and spin+orbital Kondo effects, respectively. We investigated the impact on the Kondo effects of the coordination of CO and NO molecules to the Fe{sup 2+} ion as chemical stimuli by using scanning tunneling microscopy (STM) and density functional theory calculations. The impacts of the two diatomic molecules are different from each other as a result of the different electronic configurations. The coordination of CO converts the spin state from triplet to singlet, and then the Kondo effects completely disappear. In contrast, an unpaired electron survives in the molecular orbital composed of Fe d{sub z}{sup 2} and NO 5σ and 2π* orbitals for the coordination of NO, causing a sharp Kondo resonance. The isotropic magnetic response of the peak indicates the origin is the spin Kondo effect. The diatomic molecules attached to the Fe{sup 2+} ion were easily detached by applying a pulsed voltage at the STM junction. These results demonstrate that the single molecule chemistry enables us to switch and control the spin and the many-body quantum states reversibly.

  13. One-dimensional Kondo lattice model at quarter filling

    NASA Astrophysics Data System (ADS)

    Xavier, J. C.; Miranda, E.

    2008-10-01

    We revisit the problem of the quarter-filled one-dimensional Kondo lattice model, for which the existence of a dimerized phase and a nonzero charge gap had been reported by Xavier [Phys. Rev. Lett. 90, 247204 (2003)]. Recently, some objections were raised claiming that the system is neither dimerized nor has a charge gap. In the interest of clarifying this important issue, we show that these objections are based on results obtained under conditions in which the dimer order is artificially suppressed. We use the incontrovertible dimerized phase of the Majumdar-Ghosh point of the J1-J2 Heisenberg model as a paradigm with which to illustrate this artificial suppression. Finally, by means of extremely accurate density-matrix renormalization-group calculations, we show that the charge gap is indeed nonzero in the dimerized phase.

  14. Anomalous Hall effect on the surface of topological Kondo insulators

    NASA Astrophysics Data System (ADS)

    König, E. J.; Ostrovsky, P. M.; Dzero, M.; Levchenko, A.

    2016-07-01

    We calculate the anomalous Hall conductivity σx y of the surface states in cubic topological Kondo insulators. We consider a generic model for the surface states with three Dirac cones on the (001) surface. The Fermi velocity, the Fermi momentum, and the Zeeman energy in different Dirac pockets may be unequal. The microscopic impurity potential mediates mixed intra- and interband extrinsic scattering processes. Our calculation of σx y is based on the Kubo-Streda diagrammatic approach. It includes diffractive skew scattering contributions originating from the rare two-impurity complexes. Remarkably, these contributions yield anomalous Hall conductivity that is independent of impurity concentration, and thus is of the same order as other known extrinsic side jump and skew scattering terms. We discuss various special cases of our results and the experimental relevance of our study in the context of the recent hysteretic magnetotransport data in SmB6 samples.

  15. Fractionalized Fermi liquid in a Kondo-Heisenberg model

    NASA Astrophysics Data System (ADS)

    Tsvelik, A. M.

    2016-10-01

    The Kondo-Heisenberg model is used as a controllable tool to demonstrate the existence of a peculiar metallic state with unbroken translational symmetry where the Fermi surface volume is not controlled by the total electron density. I use a nonperturbative approach where the strongest interactions are taken into account by means of exact solution, and corrections are controllable. In agreement with the general requirements formulated by T. Senthil et al. [Phys. Rev. Lett. 90, 216403 (2003), 10.1103/PhysRevLett.90.216403], the resulting metallic state represents a fractionalized Fermi liquid where well defined quasiparticles coexist with gapped fractionalized collective excitations. The system undergoes a phase transition to an ordered phase (charge density wave or superconducting), at the transition temperature which is parametrically small in comparison to the quasiparticle Fermi energy.

  16. Kondo effect and STM spectroscopy of Dirac electrons in graphene

    NASA Astrophysics Data System (ADS)

    Sengupta, Krishnendu

    2011-03-01

    We show that graphene, whose low-energy quasiparticles display Dirac like behavior, may exhibit a two-channel Kondo effect in the presence of magnetic impurities. We present a large N analysis for a generic spin S local moment coupled to Dirac electrons in graphene and demonstrate that the corresponding Kondo temperature can be tuned by an experimentally controllable applied gate voltage. We also study the STM spectra of these Dirac electrons in the presence of such impurities and demonstrate that such spectra depend qualitatively on the position of the impurity atom in the graphene matrix. More specifically, for impurity atoms atop the hexagon center, the zero-bias tunneling conductance, as measured by a STM, shows a peak; for those atop a graphene site, it shows a dip. We provide a qualitative theoretical explanation of this phenomenon and show that this unconventional behavior is a consequence of conservation/breaking of pseudospin symmetry of the Dirac quasiparticles by the impurity. We also predict that tuning the Fermi energy to zero by a gate voltage would not lead to qualitative change in the shape of the conductance spectra when the impurity is atop the hexagon center. A similar tuning of the Fermi energy for the impurity atop a site, however, would lead to a change in the tunneling conductance from a dip to a peak via an antiresonance. We discuss some recent experiments on a doped graphene sample that seem to have qualitative agreement with our theory and suggest further experiments to test our predictions. DST, India.

  17. Exploring the phase diagram of the two-impurity Kondo problem

    PubMed Central

    Spinelli, A.; Gerrits, M.; Toskovic, R.; Bryant, B.; Ternes, M.; Otte, A. F.

    2015-01-01

    A system of two exchange-coupled Kondo impurities in a magnetic field gives rise to a rich phase space hosting a multitude of correlated phenomena. Magnetic atoms on surfaces probed through scanning tunnelling microscopy provide an excellent platform to investigate coupled impurities, but typical high Kondo temperatures prevent field-dependent studies from being performed, rendering large parts of the phase space inaccessible. We present a study of pairs of Co atoms on insulating Cu2N/Cu(100), which each have a Kondo temperature of only 2.6 K. The pairs are designed to have interaction strengths similar to the Kondo temperature. By applying a sufficiently strong magnetic field, we are able to access a new phase in which the two coupled impurities are simultaneously screened. Comparison of differential conductance spectra taken on the atoms to simulated curves, calculated using a third-order transport model, allows us to independently determine the degree of Kondo screening in each phase. PMID:26616044

  18. Study of ultrasonic attenuation for the Kondo and magnetic effects in heavy fermion systems

    NASA Astrophysics Data System (ADS)

    Baral, Purna Chandra; Rout, Govind Chandra

    2013-05-01

    The heavy fermion (HF) systems draw considerable attention due to their cooperative phenomena and anomalous properties arising out of the huge effective mass. A heavy fermion system is described by a model Hamiltonian consisting of the Kondo lattice model in addition to the Heisenberg-type spin-spin interaction among the localised electrons. The Hamiltonian is treated in the mean-field approximation to find the Kondo singlet parameter λ and the short-ranged f-electron correlation parameter Γ. In order to investigate ultrasonic absorption in the system, we consider the phonon interaction with the bare f-electrons, and the phonon coupling to the Kondo singlets. Further, the phonon Hamiltonian is considered in the harmonic approximation. The phonon Green's function is calculated in closed form. The imaginary part of the phonon self-energy describes the ultrasonic attenuation for the HF systems. The calculated ultrasonic attenuation clearly displays the f-electron correlation region separated by the Kondo singlet state at low temperatures. The correlation transition temperature and the Kondo temperature are located at dips in the temperature-dependent ultrasonic attenuation. The parameter dependence of the attenuation is investigated by varying the physical parameters of the HF systems and the wave frequency, and the experimental observations are explained on the basis of the model calculations.

  19. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    DOE PAGES

    Zhu, L. J.; Nie, S. H.; Xiong, P.; Schlottmann, P.; Zhao, J. H.

    2016-02-24

    The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic- tomore » square-root temperature dependence and deviation from it in three distinct temperature regimes. Lastly, our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons.« less

  20. Replica symmetry breaking in a quantum spin glass-antiferromagnetic Kondo lattice

    NASA Astrophysics Data System (ADS)

    Magalhaes, S. G.; Zimmer, F. M.; Coqblin, B.

    2008-04-01

    The competition between the Kondo effect and the glassy magnetic order has been studied in a theoretical model of a Kondo lattice with an intrasite Kondo interaction. The spin glass (SG) and the antiferromagnetic (AF) orderings are described by two Kondo sublattices with infinite-range Ising SG interactions among localized spins and the disordered interactions can occur with spins of same sublattices and between spins of distinct sublattices. A transverse field Γ is introduced in the effective model as a quantum mechanism to produce spin flipping. The problem is formulated in a Grassmann path integral formalism. The disorder is treated within the replica trick in one-step replica symmetry breaking (1S-RSB). The static ansatz is adopted to get a mean-field expression for the free energy and order parameters. Results show a transition from the AF order to an RSB region with a finite staggered magnetization (mixed phase) when temperature T decreases for low values of the Kondo interaction. The SG phase is not observed below the mixed phase for 1S-RSB solution, in contrast with previous replica symmetry (RS) results. The Γ field suppresses the Neel temperature leading it to a quantum critical point.

  1. Ferromagnetism in the Kondo-lattice compound CePd2P2.

    PubMed

    Tran, Vinh Hung; Bukowski, Zbigniew

    2014-06-25

    We report physical properties of CePd2P2 crystallizing in the tetragonal ThCr2Si2-type structure (space group I4/mmm). Dc-magnetic susceptibility, magnetization, specific heat, electrical resistivity and magnetoresistance measurements establish a ferromagnetic ordering below the Curie temperature TC = 28.4 ± 0.2 K. Critical analysis of isothermal and isofield magnetization yields critical exponents of β = 0.405 ± 0.005, γ = 1.11 ± 0.05 and δ = 3.74 ± 0.04. The ordered state is characterized by saturation moment Ms ∼ 0.98μB and magnon energy gap Δ/kB ∼25–35 K. The studied properties reflect a competing influence of the Kondo and crystalline electric field (CEF) interactions. The strength of the Kondo effect is assigned by a low-temperature Kondo scale TK ∼19 ± 10 K and a high-temperature Kondo scale TK ~ H 117 } 10 K. A model of the inelastic scattering of the conduction electrons with an exchanged CEF energy ΔCEF was applied to the magnetic resistivity. An average value ΔCEF = 260 ± 30 K is consistent in the relationships with TK and TK H. We argue that the CePd2P2 compound appears to be a new ferromagnetic Kondo-lattice among the Ce-based intermetallics.

  2. Low-temperature behavior of transmission phase shift across a Kondo correlated quantum dot

    NASA Astrophysics Data System (ADS)

    Takada, S.; Yamamoto, M.; Bäuerle, C.; Alex, A.; von Delft, J.; Ludwig, A.; Wieck, A. D.; Tarucha, S.

    2016-08-01

    We study the transmission phase shift across a Kondo correlated quantum dot in a GaAs heterostructure at temperatures below the Kondo temperature (T Kondo singlet ground state. Our device is tuned such that the ratio Γ /U of level width Γ to charging energy U is quite large (≲0.5 rather than ≪1 ). This situation is commonly used in GaAs quantum dots to ensure Kondo temperatures large enough (≃ 100 mK here) to be experimentally accessible; however, it also implies that charge fluctuations are more pronounced than typically assumed in theoretical studies focusing on the regime Γ /U ≪1 needed to ensure a well-defined local moment. Our measured phase evolves monotonically by π across the two Coulomb peaks, but without being locked at π /2 in the Kondo valley for T ≪TK , due to a significant influence of large Γ /U . Only when Γ /U is reduced sufficiently does the phase start to be locked around π /2 and develops into a plateau at π /2 . Our observations are consistent with numerical renormalization group calculations, and can be understood as a direct consequence of the Friedel sum rule that relates the transmission phase shift to the local occupancy of the dot, and thermal average of a transmission coefficient through a resonance level near the Fermi energy.

  3. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    PubMed Central

    Zhu, L. J.; Nie, S. H.; Xiong, P.; Schlottmann, P.; Zhao, J. H.

    2016-01-01

    The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic- to square-root temperature dependence and deviation from it in three distinct temperature regimes. Our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons. PMID:26905518

  4. SU(4) Kondo effect in coupled quantum dots in parallel: Evidence of marginal fixed point

    NASA Astrophysics Data System (ADS)

    Eto, Mikio

    2008-03-01

    We theoretically study the Kondo effect in coupled quantum dots in parallel, using the scaling and NRG methods. The double quantum dots are capacitively coupled to each other, whereas they are attached to separate leads.ootnotetextA. Huebel, J. Weis and K.von Klitzing, 17th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS, 2007). The SU(4) Kondo effect is realized when the energy levels are matched between the quantum dots. We show that (i) the Kondo temperature TK decreases with increasing |δ|, where δ is the level separation between the dots, obeying a power law [crossover from SU(4) to SU(2) Kondo effect]. (ii) The exponent of the power law is not a universal value in general.ootnotetextM. Eto, J. Phys. Soc. Jpn.74, 95 (2005). This is an evidence of the marginal fixed point of SU(4) Kondo effect.ootnotetextL. Borda et al., Phys. Rev. Lett. 90, 026602 (2003) (iii) The conductance through one of the quantum dots may show a non-monotonic behavior as a function of temperature T although the total conductance is a universal function of T/TK.

  5. Proposal to directly observe the Kondo effect through enhanced photoinduced scattering of cold fermionic and bosonic atoms

    NASA Astrophysics Data System (ADS)

    Sundar, Bhuvanesh; Mueller, Erich J.

    2016-02-01

    We propose an experimental protocol to directly observe the Kondo effect by scattering ultracold atoms. We propose using an optical Feshbach resonance to engineer Kondo-type spin-dependent interactions in a system with ultracold 6Li and 87Rb gases. We calculate the momentum transferred from the 87Rb gas to the 6Li gas in a scattering experiment and show that it has a logarithmically enhanced temperature dependence, characteristic of the Kondo effect, and analogous to the resistivity of alloys with magnetic impurities. Experimentally detecting this enhancement will give a different perspective on the Kondo effect, and allow us to explore a rich variety of problems such as the Kondo lattice problem and heavy-fermion systems.

  6. Phonon-assisted tunneling and two-channel Kondo physics in molecular junctions

    SciTech Connect

    Dias Da Silva, Luis G; Dagotto, Elbio R

    2009-01-01

    The interplay between vibrational modes and Kondo physics is a fundamental aspect of transport properties of correlated molecular conductors. We present theoretical results for a single molecule in the Kondo regime connected to left and right metallic leads, creating the usual coupling to a conduction channel with left-right parity even. A center-of-mass vibrational mode introduces an additional phonon-assisted tunneling through the antisymmetric odd channel. A non-Fermi-liquid fixed point, reminiscent of the two-channel Kondo effect, appears at a critical value of the phonon-mediated coupling strength. Our numerical renormalization-group calculations for this system reveal non-Fermi-liquid behavior at low temperatures over lines of critical points. Signatures of this strongly correlated state are prominent in the thermodynamic properties and in the linear conductance.

  7. Broken SU(4) symmetry in a Kondo-correlated carbon nanotube

    NASA Astrophysics Data System (ADS)

    Schmid, Daniel R.; Smirnov, Sergey; Margańska, Magdalena; Dirnaichner, Alois; Stiller, Peter L.; Grifoni, Milena; Hüttel, Andreas K.; Strunk, Christoph

    2015-04-01

    Understanding the interplay between many-body phenomena and nonequilibrium in systems with entangled spin and orbital degrees of freedom is a central objective in nanoelectronics. We demonstrate that the combination of Coulomb interaction, spin-orbit coupling, and valley mixing results in a particular selection of the inelastic virtual processes contributing to the Kondo resonance in carbon nanotubes at low temperatures. This effect is dictated by conjugation properties of the underlying carbon nanotube spectrum at zero and finite magnetic field. Our measurements on a clean carbon nanotube are complemented by calculations based on a field-theoretical Keldysh approach to the nonequilibrium Kondo problem which well reproduces the rich experimental observations in Kondo transport.

  8. Two-channel orbital Kondo effect in a quantum dot with SO(n) symmetry

    NASA Astrophysics Data System (ADS)

    Kuzmenko, T.; Kikoin, K.; Avishai, Y.

    2013-09-01

    A scenario for the formation of non-Fermi-liquid (NFL) Kondo effect (KE) with spin variable enumerating Kondo channels is suggested and worked out. In a doubly occupied symmetric triple quantum dot within parallel geometry, the NFL low-energy regime arises provided the device possesses both source-drain and left-right parity. Kondo screening follows a multistage renormalization group mechanism: reduction of the energy scale is accompanied by the change of the relevant symmetry group from SO(8) to SO(5). At low energy, three phases compete: (1) an underscreening spin-triplet (conventional) KE, (2) a spin-singlet potential scattering, and (3) a NFL phase where the roles of spin and orbital degrees of freedom are swapped.

  9. Quantum dots with even number of electrons: kondo effect in a finite magnetic field

    PubMed

    Pustilnik; Avishai; Kikoin

    2000-02-21

    We show that the Kondo effect can be induced by an external magnetic field in quantum dots with an even number of electrons. If the Zeeman energy B is close to the single-particle level spacing Delta in the dot, the scattering of the conduction electrons from the dot is dominated by an anisotropic exchange interaction. A Kondo resonance then occurs despite the fact that B exceeds by far the Kondo temperature T(K). As a result, at low temperatures T

  10. Spin- and angle-resolved photoemission on the topological Kondo insulator candidate: SmB6.

    PubMed

    Xu, Nan; Ding, Hong; Shi, Ming

    2016-09-14

    Topological Kondo insulators are a new class of topological insulators in which metallic surface states protected by topological invariants reside in the bulk band gap at low temperatures. Unlike other 3D topological insulators, a truly insulating bulk state, which is critical for potential applications in next-generation electronic devices, is guaranteed by many-body effects in the topological Kondo insulator. Furthermore, the system has strong electron correlations that can serve as a testbed for interacting topological theories. This topical review focuses on recent advances in the study of SmB6, the most promising candidate for a topological Kondo insulator, from the perspective of spin- and angle-resolved photoemission spectroscopy with highlights of some important transport results.

  11. Universality of the Kondo effect in quantum dots with ferromagnetic leads.

    PubMed

    Gaass, M; Hüttel, A K; Kang, K; Weymann, I; von Delft, J; Strunk, Ch

    2011-10-21

    We investigate quantum dots in clean single-wall carbon nanotubes with ferromagnetic PdNi-leads in the Kondo regime. Most of the Kondo resonances exhibit a splitting, which depends on the tunnel coupling to the leads and an external magnetic field B, but only weakly on the gate voltage. Using numerical renormalization group calculations, we demonstrate that all salient features of the data can be understood using a simple model for the magnetic properties of the leads. The magnetoconductance at zero bias and low temperature depends in a universal way on gμ(B)(B-B(c))/k(B)T(K), where T(K) is the Kondo temperature and B(c) the external field compensating the splitting. PMID:22107560

  12. Kondo interactions from band reconstruction in YbInCu4

    DOE PAGES

    Jarrige, I.; Kotani, A.; Yamaoka, H.; Tsujii, N.; Ishii, K.; Upton, M.; Casa, D.; Kim, J.; Gog, T.; Hancock, J. N.

    2015-03-27

    We combine resonant inelastic X-ray scattering (RIXS) and model calculations in the Kondo lattice compound YbInCu₄, a system characterized by a dramatic increase in Kondo temperature and associated valence fluctuations below a first-order valence transition at T≃42 K. In this study, the bulk-sensitive, element-specific, and valence-projected charge excitation spectra reveal an unusual quasi-gap in the Yb-derived state density which drives an instability of the electronic structure and renormalizes the low-energy effective Hamiltonian at the transition. Our results provide long-sought experimental evidence for a link between temperature-driven changes in the low-energy Kondo scale and the higher-energy electronic structure of this system.

  13. Kondo interactions from band reconstruction in YbInCu(4).

    PubMed

    Jarrige, I; Kotani, A; Yamaoka, H; Tsujii, N; Ishii, K; Upton, M; Casa, D; Kim, J; Gog, T; Hancock, J N

    2015-03-27

    We combine resonant inelastic x-ray scattering and model calculations in the Kondo lattice compound YbInCu_{4}, a system characterized by a dramatic increase in Kondo temperature and associated valence fluctuations below a first-order valence transition at T≃42  K. The bulk-sensitive, element-specific, and valence-projected charge excitation spectra reveal an unusual quasigap in the Yb-derived state density which drives an instability of the electronic structure and renormalizes the low-energy effective Hamiltonian at the transition. Our results provide long-sought experimental evidence for a link between temperature-driven changes in the low-energy Kondo scale and the higher-energy electronic structure of this system. PMID:25860761

  14. Kondo effects in a triangular triple quantum dot II: ground-state properties for deformed configurations

    NASA Astrophysics Data System (ADS)

    Oguri, Akira; Amaha, Shinichi; Nisikawa, Yunori; Hewson, A. C.; Tarucha, Seigo; Numata, Takahide

    2010-03-01

    We study transport through a triangular triple quantum dot (TTQD) connected to two noninteracting leads, using the numerical renormalization group. The system has been theoretically revealed to show a variety of Kondo effects depending on the electron filling of the triangle [1]. For instance, the SU(4) Kondo effect takes place at three-electron filling, and a two-stage Kondo screening of a high-spin S=1 Nagaoka state takes place at four-electron filling. Because of the enhanced freedom in the configurations, however, the large parameter space of the TTQD still has not been fully explored, especially for large deformations. We report the effects of the inhomogeneity in the inter-dot couplings and the level positions in a wide region of the filling. [1] T. Numata, Y. Nisikawa, A. Oguri, and A. C. Hewson: PRB 80, 155330 (2009).

  15. Kondo physics in the single-electron transistor with ac driving

    SciTech Connect

    Nordlander, Peter; Wingreen, Ned S.; Meir, Yigal; Langreth, David C.

    2000-01-15

    Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At low frequencies a sufficiently strong ac potential produces sidebands of the Kondo peak in the spectral density of the dot, and a slow, roughly logarithmic decrease in conductance over several decades of frequency. At intermediate frequencies, the conductance of the dot displays an oscillatory behavior due to the appearance of Kondo resonances of the satellites of the dot level. At high frequencies, the conductance of the dot can vary rapidly due to the interplay between photon-assisted tunneling and the Kondo resonance. (c) 2000 The American Physical Society.

  16. Spin- and angle-resolved photoemission on the topological Kondo insulator candidate: SmB6

    NASA Astrophysics Data System (ADS)

    Xu, Nan; Ding, Hong; Shi, Ming

    2016-09-01

    Topological Kondo insulators are a new class of topological insulators in which metallic surface states protected by topological invariants reside in the bulk band gap at low temperatures. Unlike other 3D topological insulators, a truly insulating bulk state, which is critical for potential applications in next-generation electronic devices, is guaranteed by many-body effects in the topological Kondo insulator. Furthermore, the system has strong electron correlations that can serve as a testbed for interacting topological theories. This topical review focuses on recent advances in the study of SmB6, the most promising candidate for a topological Kondo insulator, from the perspective of spin- and angle-resolved photoemission spectroscopy with highlights of some important transport results.

  17. Kondo-type transport through a quantum dot under magnetic fields

    SciTech Connect

    Dong, Bing; Lei, X. L.

    2001-06-15

    In this paper, we investigate the Kondo correlation effects on linear and nonlinear transport in a quantum dot connected to reservoirs under finite magnetic fields, using the slave-boson mean field approach suggested by Kotliar and Ruckenstein [Phys. Rev. Lett. >57, 1362 (1986)]. A brief comparison between the present formulation and other slave-boson formulation is presented to justify this approach. The numerical results show that the linear conductance near electron-hole symmetry is suppressed by the application of the magnetic fields, but an anomalous enhancement is predicted in the nonsymmetry regime. The effect of external magnetic fields on the nonlinear differential conductances is discussed for the Kondo system. A significant reduction of the peak splitting is observed due to the strong Kondo correlation, which agrees well with experimental data.

  18. Kondo hole route to incoherence in the periodic Anderson model

    NASA Astrophysics Data System (ADS)

    Kumar, Pramod; Vidhyadhiraja, N. S.

    2013-03-01

    The interplay of disorder and interactions in strongly correlated electronic systems is a subject of perennial interest. In this work, we have investigated the effect of Kondo-hole type disorder on the dynamics and transport properties of heavy fermion systems. We employ the periodic Anderson model within the framework of coherent potential approximation and dynamical mean field theory. The crossover from lattice coherent behaviour to an incoherent single-impurity behaviour is reflected in all aspects: a highly frequency (ω)-dependent hybridization becomes almost flat, the coherence peak in resistivity (per impurity) gives way to a Hammann form that saturates at low temperature (T); the Drude peak and the mid-infrared peak in the optical conductivity vanish almost completely. The zero temperature resistivity can be captured in a closed form expression, and we show how the Nordheim's rule gets strongly modified in these systems. The thermopower exhibits a characteristic peak, which changes sign with increasing disorder, and its location is shown to correspond to the low energy scale of the system (ωL). In fact, the thermopower appears to be much more sensitive to disorder variations than the resistivity. A comparison to experiments yields quantitative agreement. JNCASR and CSIR

  19. Spin dynamics and Kondo physics in optical tweezers

    NASA Astrophysics Data System (ADS)

    Lin, Yiheng; Lester, Brian J.; Brown, Mark O.; Kaufman, Adam M.; Long, Junling; Ball, Randall J.; Isaev, Leonid; Wall, Michael L.; Rey, Ana Maria; Regal, Cindy A.

    2016-05-01

    We propose to use optical tweezers as a toolset for direct observation of the interplay between quantum statistics, kinetic energy and interactions, and thus implement minimum instances of the Kondo lattice model in systems with few bosonic rubidium atoms. By taking advantage of strong local exchange interactions, our ability to tune the spin-dependent potential shifts between the two wells and complete control over spin and motional degrees of freedom, we design an adiabatic tunneling scheme that efficiently creates a spin-singlet state in one well starting from two initially separated atoms (one atom per tweezer) in opposite spin state. For three atoms in a double-well, two localized in the lowest vibrational mode of each tweezer and one atom in an excited delocalized state, we plan to use similar techniques and observe resonant transfer of two-atom singlet-triplet states between the wells in the regime when the exchange coupling exceeds the mobile atom hopping. Moreover, we argue that such three-atom double-tweezers could potentially be used for quantum computation by encoding logical qubits in collective spin and motional degrees of freedom. Current address: Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.

  20. Visualizing heavy fermions emerging in a quantum critical Kondo lattice

    NASA Astrophysics Data System (ADS)

    Aynajian, Pegor

    2013-03-01

    In solids containing elements with f orbitals, the interaction between f-electron spins and those of itinerant electrons leads to the development of low-energy fermionic excitations with a heavy effective mass. These excitations are fundamental to the appearance of unconventional superconductivity and non-Fermi-liquid behavior observed in actinide- and lanthanide-based compounds. We use spectroscopic mapping with the scanning tunneling microscope to detect the emergence of heavy excitations with lowering of temperature in a prototypical family of cerium-based heavy-fermion compounds. We demonstrate the sensitivity of the tunneling process to the composite nature of these heavy quasiparticles, which arises from quantum entanglement of itinerant conduction and f electrons. Scattering and interference of the composite quasiparticles is used to resolve their energy-momentum structure and to extract their mass enhancement, which develops with decreasing temperature. The lifetime of the emergent heavy quasiparticles reveals signatures of enhanced scattering and their spectral lineshape shows evidence of energy-temperature scaling. These findings demonstrate that proximity to a quantum critical point results in critical damping of the emergent heavy excitation of our Kondo lattice system. This work is funded by a DOE-BES grant. Partial support for instrumentation is provided by NSF-DMR, Keck Foundation, and NSF-MRSEC. PA also acknowledges support of a fellowship through the PCCM funded by NSF MERSEC.

  1. Fano-Andreev effect in Quantum Dots in Kondo regime

    NASA Astrophysics Data System (ADS)

    Orellana, Pedro; Calle, Ana Maria; Pacheco, Monica; Apel, Victor

    In the present work, we investigate the transport through a T-shaped double quantum dot system coupled to two normal leads and to a superconducting lead. We study the role of the superconducting lead in the quantum interferometric features of the double quantum dot and by means of a slave boson mean field approximation at low temperature regime. We inquire into the influence of intradot interactions in the electronic properties of the system as well. Our results show that Fano resonances due to Andreev bound states are exhibited in the transmission from normal to normal lead as a consequence of quantum interference and proximity effect. This Fano effect produced by Andreev bound states in a side quantum dot was called Fano-Andreev effect, which remains valid even if the electron-electron interaction are taken into account, that is, the Fano-Andreev effect is robust against e-e interactions even in Kondo regime. We acknowledge the financial support from FONDECYT program Grants No. 3140053 and 11400571.

  2. Charge Kondo anomalies in PbTe doped with Tl impurities.

    PubMed

    Costi, T A; Zlatić, V

    2012-01-20

    We investigate the properties of PbTe doped with a small concentration x of Tl impurities acting as acceptors and described by Anderson impurities with negative onsite correlation energy. We use the numerical renormalization group method to show that the resulting charge Kondo effect naturally accounts for the unusual low temperature and doping dependence of normal state properties, including the self-compensation effect in the carrier density and the nonmagnetic Kondo anomaly in the resistivity. These are found to be in good qualitative agreement with experiment. Our results for the Tl s-electron spectral function provide a new interpretation of point contact data.

  3. Magnetoresistance in the Spin-Orbit Kondo State of Elemental Bismuth

    PubMed Central

    Craco, Luis; Leoni, Stefano

    2015-01-01

    Materials with strong spin-orbit coupling, which competes with other particle-particle interactions and external perturbations, offer a promising route to explore novel phases of quantum matter. Using LDA + DMFT we reveal the complex interplay between local, multi-orbital Coulomb and spin-orbit interaction in elemental bismuth. Our theory quantifies the role played by collective dynamical fluctuations in the spin-orbit Kondo state. The correlated electronic structure we derive is promising in the sense that it leads to results that might explain why moderate magnetic fields can generate Dirac valleys and directional-selective magnetoresistance responses within spin-orbit Kondo metals. PMID:26358556

  4. Observation of the Kondo effect in a spin-3/2 hole quantum dot

    SciTech Connect

    Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Trunov, K.; Reuter, D.; Wieck, A. D.

    2013-12-04

    We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.

  5. Competition between Quadrupole and Magnetic Kondo Effects in Non-Kramers Doublet Systems

    NASA Astrophysics Data System (ADS)

    Kusunose, Hiroaki; Onimaru, Takahiro

    2015-03-01

    We discuss possible competition between magnetic and quadrupole Kondo effects in non-Kramers doublet systems in cubic symmetry. The quadrupole Kondo effect leads to non-Fermi-liquid (NFL) ground state, while the magnetic one favors ordinary Fermi-liquid (FL) ground state. In terms of the j-j coupling scheme, we argue that the orbital fluctuation must develop in the vicinity of the NFL-FL boundary. A change of temperature dependence of the f-electron entropy in both the FL and NFL regimes is demonstrated by the Wilson's numerical renormalization-group (NRG) method on the basis of the extended two-channel Kondo exchange model. We present implications to PrT2X20 (T=Ti, V, Ir; X=Al, Zn) systems which exhibit both quadrupole ordering and peculiar superconductivity. We discuss how the magnetic field lifts the non-Kramers degeneracy. Our model also represents the alternative FL state accompanied by a free magnetic spin, as a consequence of stronger competition between the magnetic and the quadrupole Kondo effects.

  6. Blocking transport resonances via Kondo many-body entanglement in quantum dots.

    PubMed

    Niklas, Michael; Smirnov, Sergey; Mantelli, Davide; Margańska, Magdalena; Nguyen, Ngoc-Viet; Wernsdorfer, Wolfgang; Cleuziou, Jean-Pierre; Grifoni, Milena

    2016-01-01

    Many-body entanglement is at the heart of the Kondo effect, which has its hallmark in quantum dots as a zero-bias conductance peak at low temperatures. It signals the emergence of a conducting singlet state formed by a localized dot degree of freedom and conduction electrons. Carbon nanotubes offer the possibility to study the emergence of the Kondo entanglement by tuning many-body correlations with a gate voltage. Here we show another side of Kondo correlations, which counterintuitively tend to block conduction channels: inelastic co-tunnelling lines in the magnetospectrum of a carbon nanotube strikingly disappear when tuning the gate voltage. Considering the global SU(2) ⊗ SU(2) symmetry of a nanotube coupled to leads, we find that only resonances involving flips of the Kramers pseudospins, associated to this symmetry, are observed at temperatures and voltages below the corresponding Kondo scale. Our results demonstrate the robust formation of entangled many-body states with no net pseudospin. PMID:27526870

  7. Quantum phase transitions, frustration, and the Fermi surface in the Kondo lattice model

    NASA Astrophysics Data System (ADS)

    Eidelstein, Eitan; Moukouri, S.; Schiller, Avraham

    2011-07-01

    The quantum phase transition from a spin-Peierls phase with a small Fermi surface to a paramagnetic Luttinger-liquid phase with a large Fermi surface is studied in the framework of a one-dimensional Kondo-Heisenberg model that consists of an electron gas away from half filling, coupled to a spin-1/2 chain by Kondo interactions. The Kondo spins are further coupled to each other with isotropic nearest-neighbor and next-nearest-neighbor antiferromagnetic Heisenberg interactions which are tuned to the Majumdar-Ghosh point. Focusing on three-eighths filling and using the density-matrix renormalization-group (DMRG) method, we show that the zero-temperature transition between the phases with small and large Fermi momenta appears continuous, and involves a new intermediate phase where the Fermi surface is not well defined. The intermediate phase is spin gapped and has Kondo-spin correlations that show incommensurate modulations. Our results appear incompatible with the local picture for the quantum phase transition in heavy fermion compounds, which predicts an abrupt change in the size of the Fermi momentum.

  8. Sub-molecular modulation of a 4f driven Kondo resonance by surface-induced asymmetry

    PubMed Central

    Warner, Ben; El Hallak, Fadi; Atodiresei, Nicolae; Seibt, Philipp; Prüser, Henning; Caciuc, Vasile; Waters, Michael; Fisher, Andrew J.; Blügel, Stefan; van Slageren, Joris; Hirjibehedin, Cyrus F.

    2016-01-01

    Coupling between a magnetic impurity and an external bath can give rise to many-body quantum phenomena, including Kondo and Hund's impurity states in metals, and Yu-Shiba-Rusinov states in superconductors. While advances have been made in probing the magnetic properties of d-shell impurities on surfaces, the confinement of f orbitals makes them difficult to access directly. Here we show that a 4f driven Kondo resonance can be modulated spatially by asymmetric coupling between a metallic surface and a molecule containing a 4f-like moment. Strong hybridization of dysprosium double-decker phthalocyanine with Cu(001) induces Kondo screening of the central magnetic moment. Misalignment between the symmetry axes of the molecule and the surface induces asymmetry in the molecule's electronic structure, spatially mediating electronic access to the magnetic moment through the Kondo resonance. This work demonstrates the important role that molecular ligands have in mediating electronic and magnetic coupling and in accessing many-body quantum states. PMID:27666413

  9. State identification and tunable Kondo effect of MnPc on Ag(001)

    NASA Astrophysics Data System (ADS)

    Kügel, Jens; Karolak, Michael; Krönlein, Andreas; Senkpiel, Jacob; Hsu, Pin-Jui; Sangiovanni, Giorgio; Bode, Matthias

    2015-06-01

    We present a detailed investigation of spectroscopic features located at the central metal ion of MnPc (where Pc represents phthalocyanine) on Ag(001) by means of scanning tunneling spectroscopy (STS) and first-principles theory. STS data taken close to the Fermi level reveal an asymmetric feature that cannot be fitted with a single Fano function representing a one-channel Kondo effect. Instead, our data indicate the existence of a second superimposed feature. Two potential physical origins, a second Kondo channel related to the dx z /y z orbitals, and a spectral feature of the dz2 orbital itself, are discussed. A systematic experimental and theoretical comparison of MnPc with CoPc and FePc indicates that the second feature observed on MnPc is caused by the dz2 orbital. This conclusion is corroborated by STM-induced dehydrogenation experiments on FePc and MnPc which in both cases result in a gradual shift towards more positive binding energies and a narrowing of the Kondo resonance. Theoretical analysis reveals that the latter is caused by the reduced hybridization between the d orbital and the substrate. Spatially resolved differential conductivity maps taken close to the respective peak positions show that the intensity of both features is highest over the central Mn ion, thereby providing further evidence against a second Kondo channel originating from the dx z /y z orbital of the central Mn ion.

  10. Electrostatic control over polarized currents through the spin-orbital Kondo effect

    NASA Astrophysics Data System (ADS)

    Büsser, C. A.; Feiguin, A. E.; Martins, G. B.

    2012-06-01

    Numerical calculations indicate that by suitably controlling the individual gate voltages of a capacitively coupled parallel double quantum dot, with each quantum dot coupled to one of two independent nonmagnetic channels, this system can be set into a spin-orbital Kondo state by applying a magnetic field. This Kondo regime, closely related to the SU(4) Kondo, flips spin from 1 to 0 through cotunneling processes that generate almost totally spin-polarized currents with opposite spin orientation along the two channels. Moreover, by appropriately changing the gate voltages of both quantum dots, one can simultaneously flip the spin polarization of the currents in each channel. As a similar zero magnetic field Kondo effect has been recently observed by Okazaki [Phys. Rev. BPLRBAQ1098-012110.1103/PhysRevB.84.161305 84, 161305(R) (2011)], we analyze a range of magnetic field values where this polarization effect seems robust, suggesting that the setup may be used as an efficient bipolar spin filter, which can generate electrostatically reversible spatially separated spin currents with opposite polarizations.

  11. Kondo effect in coupled quantum dots: a Non-crossing approximation study

    NASA Astrophysics Data System (ADS)

    Aguado, Ramon; Langreth, David

    2003-03-01

    The out-of-equilibrium transport properties of a double quantum dot system in the Kondo regime are studied theoretically by means of a two-impurity Anderson Hamiltonian with inter-impurity hopping. The Hamiltonian, formulated in slave-boson language, is solved by means of a generalization of the non-crossing approximation (NCA) to the present problem. We provide benchmark calculations of the predictions of the NCA for the linear and nonlinear transport properties of coupled quantum dots in the Kondo regime. We give a series of predictions that can be observed experimentally in linear and nonlinear transport measurements through coupled quantum dots. Importantly, it is demonstrated that measurements of the differential conductance G=dI/dV, for the appropriate values of voltages and inter-dot tunneling couplings, can give a direct observation of the coherent superposition between the many-body Kondo states of each dot. This coherence can be also detected in the linear transport through the system: the curve linear conductance vs temperature is non-monotonic, with a maximum at a temperature T characterizing quantum coherence between both Kondo states.

  12. Sub-molecular modulation of a 4f driven Kondo resonance by surface-induced asymmetry

    NASA Astrophysics Data System (ADS)

    Warner, Ben; El Hallak, Fadi; Atodiresei, Nicolae; Seibt, Philipp; Pruser, Henning; Caciuc, Vasile; Waters, Michael; Fisher, Andrew J.; Blugel, Stefan; van Slageren, Joris; Hirjibehedin, Cyrus F.

    Coupling between a magnetic impurity and an external bath can give rise to many-body quantum phenomena, including Kondo and Hund's Impurity states in metals, and Yu-Shiba-Rusinov states in superconductors. While advances have been made in probing the magnetic properties of d-shell impurities on surfaces, the confinement of f orbitals makes them much more difficult to access directly. Here we show that a 4f driven Kondo resonance can be modulated spatially by asymmetric coupling between a metallic surface and a molecule containing a 4f-like moment. Strong hybridisation of dysprosium double-decker phthalocyanine (DyPc2) with Cu(001) induces Kondo screening of the central magnetic moment. Misalignment between the symmetry axes of the molecule and the surface induces asymmetry in the molecule's electronic structure, spatially mediating electronic access to the magnetic moment through the Kondo resonance. This work demonstrates the important role that molecular ligands play in mediating electronic and magnetic coupling and in accessing many-body quantum states.

  13. Blocking transport resonances via Kondo many-body entanglement in quantum dots

    PubMed Central

    Niklas, Michael; Smirnov, Sergey; Mantelli, Davide; Margańska, Magdalena; Nguyen, Ngoc-Viet; Wernsdorfer, Wolfgang; Cleuziou, Jean-Pierre; Grifoni, Milena

    2016-01-01

    Many-body entanglement is at the heart of the Kondo effect, which has its hallmark in quantum dots as a zero-bias conductance peak at low temperatures. It signals the emergence of a conducting singlet state formed by a localized dot degree of freedom and conduction electrons. Carbon nanotubes offer the possibility to study the emergence of the Kondo entanglement by tuning many-body correlations with a gate voltage. Here we show another side of Kondo correlations, which counterintuitively tend to block conduction channels: inelastic co-tunnelling lines in the magnetospectrum of a carbon nanotube strikingly disappear when tuning the gate voltage. Considering the global SU(2) ⊗ SU(2) symmetry of a nanotube coupled to leads, we find that only resonances involving flips of the Kramers pseudospins, associated to this symmetry, are observed at temperatures and voltages below the corresponding Kondo scale. Our results demonstrate the robust formation of entangled many-body states with no net pseudospin. PMID:27526870

  14. Environment-modulated Kondo phenomena in FePc/Au(111) adsorption systems

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Zheng, Xiao; Yang, Jinlong

    2016-03-01

    Recent scanning tunneling microscopy experiments on electron transport through iron(II) phthalocyanine (FePc) molecules adsorbed on the Au(111) surface have revealed that the measured Kondo conductance signature depends strongly on the specific adsorption site. To understand the physical origin of experimental observations, particularly the variation of Kondo features with the molecular adsorption site, we employ a combined density functional theory (DFT) and hierarchical equations of motion (HEOM) approach to investigate the electronic structure and Kondo correlation in FePc/Au(111) composite systems. The calculation results indicate that, for the on-top adsorption configuration, the two degenerate spin-unpaired dπ orbitals on the Fe center are coupled indirectly through substrate band states, leading to the Fano-like antiresonance line shape in the d I /d V spectra, while for the bridge adsorption configuration, the environment-induced couplings are largely suppressed because of the two different spin-unpaired d orbitals. Therefore, our work suggests that the environment-induced coupling as an essential physical factor could greatly influence the Fano-Kondo features in magnetic molecule/metal composites, and the crucial role of local orbital degeneracy and symmetry is discovered. These findings provide important insights into the electron correlation effects in complex solid-state systems. The usefulness and practicality of the combined DFT+HEOM method is also highlighted.

  15. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  16. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  17. Maximized orbital and spin Kondo effects in a single-electron transistor

    NASA Astrophysics Data System (ADS)

    Le Hur, Karyn; Simon, Pascal; Borda, László

    2004-01-01

    We investigate the charge fluctuations of a single-electron box (metallic grain) coupled to a lead via a smaller quantum dot in the Kondo regime. The most interesting aspect of this problem resides in the interplay between spin Kondo physics stemming from the screening of the spin of the small dot and orbital Kondo physics emerging when charging states of the grain with (charge) Q=0 and Q=e are almost degenerate. Combining Wilson’s numerical renormalization-group method with perturbative scaling approaches we push forward our previous work [K. Le Hur and P. Simon, Phys. Rev. B 67, 201308R (2003)]. We emphasize that, for symmetric and slightly asymmetric barriers, the strong entanglement of charge and spin flip events in this setup inevitably results in a nontrivial stable SU(4) Kondo fixed point near the degeneracy points of the grain. By analogy with a small dot sandwiched between two leads, the ground state is Fermi-liquid-like, which considerably smears out the Coulomb staircase behavior and prevents the Matveev logarithmic singularity from arising. Most notably, the associated Kondo temperature TSU(4)K might be raised compared to that in conductance experiments through a small quantum dot (˜1 K), which makes the observation of our predictions a priori accessible. We discuss the robustness of the SU(4) correlated state against the inclusion of an external magnetic field, a deviation from the degeneracy points, particle-hole symmetry in the small dot, and asymmetric tunnel junctions and comment on the different crossovers.

  18. Kondo effects in a triangular triple quantum dot with lower symmetries

    NASA Astrophysics Data System (ADS)

    Oguri, A.; Amaha, S.; Nishikawa, Y.; Numata, T.; Shimamoto, M.; Hewson, A. C.; Tarucha, S.

    2011-05-01

    We study the low-energy properties and characteristic Kondo energy scale of a triangular triple quantum dot, connected to two non-interacting leads, in a wide parameter range of a gate voltage and distortions which lower the symmetry of an equilateral structure, using the numerical renormalization group approach. For large Coulomb interactions, the ground states with different characters can be classified according to the plateaus of Θ≡(δe-δo)(2/π), where δe and δo are the phase shifts for the even and odd partial waves. At these plateaus of Θ, both Θ and the occupation number Ntot≡(δe+δo)(2/π) take values close to integers, and thus the ground states can be characterized by these two integers. The Kondo effect with a local moment with total spin S=1 due to a Nagaoka mechanism appears on the plateau, which can be identified by Θ≃2.0 and Ntot≃4.0. For large distortions, however, the high-spin moment disappears through a singlet-triplet transition occurring within the four-electron region. It happens at a crossover to the adjacent plateaus for Θ≃0.0 and Θ≃4.0, and the two-terminal conductance has a peak in the transient regions. For weak distortions, the SU(4) Kondo effect also takes place for Ntot≃3.0. It appears as a sharp conductance valley between the S=1/2 Kondo ridges on both sides. We also find that the characteristic energy scale T* reflect these varieties of the Kondo effect. Particularly, T* is sensitive to the distribution of the charge and spin in the triangular triple dot.

  19. Direct observation of the spin texture in SmB6 as evidence of the topological Kondo insulator.

    PubMed

    Xu, N; Biswas, P K; Dil, J H; Dhaka, R S; Landolt, G; Muff, S; Matt, C E; Shi, X; Plumb, N C; Radović, M; Pomjakushina, E; Conder, K; Amato, A; Borisenko, S V; Yu, R; Weng, H-M; Fang, Z; Dai, X; Mesot, J; Ding, H; Shi, M

    2014-07-30

    Topological Kondo insulators have been proposed as a new class of topological insulators in which non-trivial surface states reside in the bulk Kondo band gap at low temperature due to strong spin-orbit coupling. In contrast to other three-dimensional topological insulators, a topological Kondo insulator is truly bulk insulating. Furthermore, strong electron correlations are present in the system, which may interact with the novel topological phase. By applying spin- and angle-resolved photoemission spectroscopy, here we show that the surface states of SmB6 are spin polarized. The spin is locked to the crystal momentum, fulfilling time reversal and crystal symmetries. Our results provide strong evidence that SmB6 can host topological surface states in a bulk insulating gap stemming from the Kondo effect, which can serve as an ideal platform for investigating of the interplay between novel topological quantum states with emergent effects and competing orders induced by strongly correlated electrons.

  20. Cyclotron dynamics of a Kondo singlet in a spin-orbit-coupled alkaline-earth-metal atomic gas

    NASA Astrophysics Data System (ADS)

    Jiang, Bo-Nan; Lv, Hao; Wang, Wen-Li; Du, Juan; Qian, Jun; Wang, Yu-Zhu

    2014-11-01

    We propose a scheme to investigate the interplay between the Kondo-exchange interaction and the quantum spin Hall effect with ultracold fermionic alkaline-earth-metal atoms trapped in two-dimensional optical lattices using ultracold collision and laser-assisted tunneling. In the strong Kondo-coupling regime, although the loop trajectory of the mobile atom disappears, collective dynamics of an atom pair in two clock states can exhibit an unexpected spin-dependent cyclotron orbit in a plaquette, realizing the quantum spin Hall effect of the Kondo singlet. We demonstrate that the collective cyclotron dynamics of the spin-zero Kondo singlet is governed by an effective Harper-Hofstadter model in addition to second-order diagonal tunneling.

  1. Electron-vibration interaction in the presence of a switchable Kondo resonance realized in a molecular junction.

    PubMed

    Rakhmilevitch, D; Korytár, R; Bagrets, A; Evers, F; Tal, O

    2014-12-01

    The interaction of individual electrons with vibrations has been extensively studied. However, the nature of electron-vibration interaction in the presence of many-body electron correlations such as a Kondo state has not been fully investigated. Here, we present transport measurements on a Copper-phthalocyanine molecule, suspended between two silver electrodes in a break-junction setup. Our measurements reveal both zero bias and satellite conductance peaks, which are identified as Kondo resonances with a similar Kondo temperature. The relation of the satellite peaks to electron-vibration interaction is corroborated using several independent spectroscopic indications, as well as ab initio calculations. Further analysis reveals that the contribution of vibration-induced inelastic current is significant in the presence of a Kondo resonance. PMID:25526145

  2. Genome sequence of Frateuria aurantia type strain (Kondo 67(T)), a xanthomonade isolated from Lilium auratium Lindl.

    SciTech Connect

    Anderson, Iain; Teshima, Hazuki; Nolan, Matt; Lapidus, Alla L.; Tice, Hope; Glavina Del Rio, Tijana; Cheng, Jan-Fang; Han, Cliff; Tapia, Roxanne; Goodwin, Lynne A.; Pitluck, Sam; Liolios, Konstantinos; Mavromatis, K; Pagani, Ioanna; Ivanova, N; Mikhailova, Natalia; Pati, Amrita; Chen, Amy; Palaniappan, Krishna; Land, Miriam L; Rohde, Manfred; Lang, Elke; Detter, J. Chris; Goker, Markus; Woyke, Tanja; Bristow, James; Eisen, Jonathan; Markowitz, Victor; Hugenholtz, Philip; Kyrpides, Nikos C; Klenk, Hans-Peter

    2013-01-01

    rateuria aurantia (ex Kondo and Ameyama 1958) Swings et al. 1980 is a member of the bispecific genus Frateuria in the family Xanthomonadaceae, which is already heavily targeted for non-type strain genome sequencing. Strain Kondo 67(T) was initially (1958) identified as a member of 'Acetobacter aurantius', a name that was not considered for the approved list. Kondo 67(T) was therefore later designated as the type strain of the newly proposed acetogenic species Frateuria aurantia. The strain is of interest because of its triterpenoids (hopane family). F. aurantia Kondo 67(T) is the first member of the genus Frateura whose genome sequence has been deciphered, and here we describe the features of this organism, together with the complete genome sequence and annotation. The 3,603,458-bp long chromosome with its 3,200 protein-coding and 88 RNA genes is a part of the Genomic Encyclopedia of Bacteria and Archaea project.

  3. Introducing the Hyper Hadrons, Hyper Mesons, Heavy Leptons and Massive Neutrinos of Kazuo Kondo's Mass Quantum Cascade

    NASA Astrophysics Data System (ADS)

    Croll, Grenville J.

    The late Professor Kazuo Kondo (Department of Mathematics, Tokyo University, Japan) l a hitherto unknown a priori particle theory which provides predictions of massive particles which may be detected by the Large Hadron Collider (LHC) and related apparatus. This article briefly introduces Kondo's work and documents the derivation and masses of his expected hyper-mesons, hyper-hadrons, heavy leptons and massive neutrinos. Several particles in these classes may have already been detected.

  4. Pressure-tuned quantum criticality in the antiferromagnetic Kondo semimetal CeNi2-δAs2.

    PubMed

    Luo, Yongkang; Ronning, F; Wakeham, N; Lu, Xin; Park, Tuson; Xu, Z-A; Thompson, J D

    2015-11-01

    The easily tuned balance among competing interactions in Kondo-lattice metals allows access to a zero-temperature, continuous transition between magnetically ordered and disordered phases, a quantum-critical point (QCP). Indeed, these highly correlated electron materials are prototypes for discovering and exploring quantum-critical states. Theoretical models proposed to account for the strange thermodynamic and electrical transport properties that emerge around the QCP of a Kondo lattice assume the presence of an indefinitely large number of itinerant charge carriers. Here, we report a systematic transport and thermodynamic investigation of the Kondo-lattice system CeNi2-δAs2 (δ ≈ 0.28) as its antiferromagnetic order is tuned by pressure and magnetic field to zero-temperature boundaries. These experiments show that the very small but finite carrier density of ~0.032 E-/formular unit in CeNi2-δAs2 leads to unexpected transport signatures of quantum criticality and the delayed development of a fully coherent Kondo-lattice state with decreasing temperature. The small carrier density and associated semimetallicity of this Kondo-lattice material favor an unconventional, local-moment type of quantum criticality and raises the specter of the Nozières exhaustion idea that an insufficient number of conduction-electron spins to separately screen local moments requires collective Kondo screening. PMID:26483465

  5. Pressure-tuned quantum criticality in the antiferromagnetic Kondo semimetal CeNi2−δAs2

    PubMed Central

    Luo, Yongkang; Ronning, F.; Wakeham, N.; Lu, Xin; Park, Tuson; Xu, Z.-A.; Thompson, J. D.

    2015-01-01

    The easily tuned balance among competing interactions in Kondo-lattice metals allows access to a zero-temperature, continuous transition between magnetically ordered and disordered phases, a quantum-critical point (QCP). Indeed, these highly correlated electron materials are prototypes for discovering and exploring quantum-critical states. Theoretical models proposed to account for the strange thermodynamic and electrical transport properties that emerge around the QCP of a Kondo lattice assume the presence of an indefinitely large number of itinerant charge carriers. Here, we report a systematic transport and thermodynamic investigation of the Kondo-lattice system CeNi2−δAs2 (δ ≈ 0.28) as its antiferromagnetic order is tuned by pressure and magnetic field to zero-temperature boundaries. These experiments show that the very small but finite carrier density of ∼0.032 e−/formular unit in CeNi2−δAs2 leads to unexpected transport signatures of quantum criticality and the delayed development of a fully coherent Kondo-lattice state with decreasing temperature. The small carrier density and associated semimetallicity of this Kondo-lattice material favor an unconventional, local-moment type of quantum criticality and raises the specter of the Nozières exhaustion idea that an insufficient number of conduction-electron spins to separately screen local moments requires collective Kondo screening. PMID:26483465

  6. Pressure-tuned quantum criticality in the antiferromagnetic Kondo semimetal CeNi2–δAs2

    DOE PAGES

    Luo, Yongkang; Ronning, F.; Wakeham, N.; Lu, Xin; Park, Tuson; Xu, Z. -A.; Thompson, J. D.

    2015-10-19

    The easily tuned balance among competing interactions in Kondo-lattice metals allows access to a zero-temperature, continuous transition between magnetically ordered and disordered phases, a quantum-critical point (QCP). Indeed, these highly correlated electron materials are prototypes for discovering and exploring quantum-critical states. Theoretical models proposed to account for the strange thermodynamic and electrical transport properties that emerge around the QCP of a Kondo lattice assume the presence of an indefinitely large number of itinerant charge carriers. Here, we report a systematic transport and thermodynamic investigation of the Kondo-lattice system CeNi2–δAs2 (δ ≈ 0.28) as its antiferromagnetic order is tuned by pressuremore » and magnetic field to zero-temperature boundaries. These experiments show that the very small but finite carrier density of ~0.032 e–/formular unit in CeNi2–δAs2 leads to unexpected transport signatures of quantum criticality and the delayed development of a fully coherent Kondo-lattice state with decreasing temperature. Here, the small carrier density and associated semimetallicity of this Kondo-lattice material favor an unconventional, local-moment type of quantum criticality and raises the specter of the Nozières exhaustion idea that an insufficient number of conduction-electron spins to separately screen local moments requires collective Kondo screening.« less

  7. Gate-tunable Kondo resistivity and dephasing rate in graphene studied by numerical renormalization group calculations

    NASA Astrophysics Data System (ADS)

    Lo, Po-Wei; Guo, Guang-Yu; Anders, Frithjof B.

    2014-05-01

    Motivated by the recent observation of the Kondo effect in graphene in transport experiments, we investigate the resistivity and dephasing rate in the Kondo regime due to magnetic impurities in graphene with different chemical potentials (μ). The Kondo effect due to either carbon vacancies or magnetic adatoms in graphene is described by the single-orbital pseudogap asymmetric Anderson impurity model which is solved by the accurate numerical renormalization group method. We find that although the Anderson impurity model considered here is a mixed-valence system, it can be driven into either the Kondo [μ >μc (critical value) >0], mixed-valency (μ ≈μc), or empty-orbital (μ <μc) regime by a gate voltage, giving rise to characteristic features in resistivity and dephasing rate in each regime. Specifically, in the case of μ <μc, the shapes of the resistivity (dephasing rate) curves for different μ are nearly identical. However, as temperature decreases, they start to increase to their maxima at a lower T /TK, but more rapidly [as (TK/T)3/2] than in normal metals [here, T (TK) denotes the (Kondo) temperature]. As T further decreases, after reaching the maximum, the dephasing rate drops more quickly than in normal metals, behaving as (T/TK)3 instead of (T/TK)2. Furthermore, the resistivity has a distinct peak above the saturation value near TK. In the case of μ >μc, in contrast, the resistivity curve has an additional broad shoulder above 10TK and the dephasing rate exhibits an interesting shoulder-peak shape. In the narrow boundary region (μ ≈μc), both the resistivity and dephasing rate curves are similar to the corresponding ones in normal metals. This explains the conventional Kondo-like resistivity from recent experiments on graphene with defects, although the distinct features in the resistivity in the other cases (μ <μc or μ >μc) were not seen in the experiments. The interesting features in the resistivity and dephasing rate are analyzed in

  8. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Zygmunt (Inventor); Kressel, Henry (Inventor)

    1977-01-01

    A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

  9. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  10. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  11. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  12. Superconductivity of composite particles in a two-channel Kondo lattice.

    PubMed

    Hoshino, Shintaro; Kuramoto, Yoshio

    2014-04-25

    Emergence of odd-frequency s-wave superconductivity is demonstrated in the two-channel Kondo lattice by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. Around half filling of the conduction bands, divergence of an odd-frequency pairing susceptibility is found, which signals instability toward the superconductivity. The corresponding order parameter is equivalent to a staggered composite-pair amplitude with even frequencies, which involves both localized spins and conduction electrons. A model wave function is constructed for the composite order with the use of symmetry operations such as charge conjugation and channel rotations. Given a certain asymmetry of the conduction bands, another s-wave superconductivity is found that has a uniform order parameter. The Kondo effect in the presence of two channels is essential for both types of unconventional superconductivity.

  13. Quantum critical Mott transitions in a bilayer Kondo insulator-metal model system

    NASA Astrophysics Data System (ADS)

    Sen, Sudeshna; Vidhyadhiraja, N. S.

    2016-04-01

    A bilayer system comprising a Kondo insulator coupled to a simple metal (KI-M) is considered. Employing the framework of dynamical mean-field theory, the model system is shown to exhibit a surface of quantum critical points (QCPs) that separates a Kondo screened, Fermi liquid phase from a local moment, Mott insulating phase. The quantum critical nature of these Mott transitions is characterized by the vanishing of (a) the coherence scale on the Fermi liquid side, and (b) the Mott gap on the MI side. In contrast to the usual "large-to-small" Fermi surface (FS) QCPs in heavy-fermion systems, the bilayer KI-M system exhibits a complete FS destruction.

  14. Magnetic ordering and non-Fermi-liquid behavior in the multichannel Kondo-lattice model

    NASA Astrophysics Data System (ADS)

    Irkhin, Valentin Yu.

    2016-05-01

    Scaling equations for the Kondo lattice in the paramagnetic and magnetically ordered phases are derived to next-leading order with account of spin dynamics. The results are applied to describe various mechanisms of the non-Fermi-liquid (NFL) behavior in the multichannel Kondo-lattice model where a fixed point occurs in the weak-coupling region. The corresponding temperature dependences of electronic and magnetic properties are discussed. The model describes naturally formation of a magnetic state with soft boson mode and small moment value. An important role of Van Hove singularities in the magnon spectral function is demonstrated. The results are rather sensitive to the type of magnetic ordering and space dimensionality, the conditions for NFL behavior being more favorable in the antiferromagnetic and 2D cases.

  15. Nonequilibrium transport through a Kondo dot in a magnetic field: perturbation theory and poor man's scaling.

    PubMed

    Rosch, A; Paaske, J; Kroha, J; Wölfle, P

    2003-02-21

    We consider electron transport through a quantum dot described by the Kondo model in the regime of large transport voltage V in the presence of a magnetic field B with max((V,B)>T(K). The electric current I and the local magnetization M are found to be universal functions of V/T(K) and B/T(K), where T(K) is the equilibrium Kondo temperature. We present a generalization of the perturbative renormali-zation group to frequency dependent coupling functions, as necessitated by the structure of bare perturbation theory. We calculate I and M within a poor man's scaling approach and find excellent agreement with experiment. PMID:12633260

  16. Bohm-Aharonov and Kondo effects on tunneling currents in a mesoscopic ring

    SciTech Connect

    Davidovich, M.A.; Anda, E.V.; Chiappe, G.

    1997-03-01

    We present an analysis of the Kondo effect on the Bohm-Aharonov oscillations of the tunneling currents in a mesoscopic ring with a quantum dot inserted in one of its arms. The system is described by an Anderson-impurity tight-binding Hamiltonian where the electron-electron interaction is restricted to the dot. The currents are obtained using nonequilibrium Green functions calculated through a cumulant diagrammatic expansion in the chain approximation. It is shown that at low temperature, even with the system out of resonance, the Kondo peak provides a channel for the electron to tunnel through the dot, giving rise to the Bohm-Aharonov oscillations of the current. At high temperature these oscillations are important only if the dot level is aligned to the Fermi level, when the resonance condition is satisfied. {copyright} {ital 1997} {ital The American Physical Society}

  17. Kondo lattice on the edge of a 2D topological insulator

    NASA Astrophysics Data System (ADS)

    Maciejko, Joseph

    2012-02-01

    Much attention has been devoted recently to the experimental and theoretical study of the effect of magnetic impurities on the stability of the gapless boundary modes of topological insulators. When the quantum dynamics of the impurities is considered, those boundary modes constitute novel types of fermionic baths which may affect the nature of possible impurity phases and phase transitions. We study a regular one-dimensional array of quantum magnetic impurities interacting with the helical edge liquid of a two-dimensional time-reversal invariant topological insulator. Exact solutions at the special Toulouse and Luther-Emery points as well as a renormalization group analysis àla Anderson-Yuval allow us to construct a phase diagram in the space of Kondo coupling, electron-electron interaction strength, and electron density. We point out similarities and differences with the Kondo lattice in a ordinary one-dimensional electron gas.

  18. Non-Kondo zero-bias anomaly in disordered quantum wires

    SciTech Connect

    Wen, Chong-Shian; Hsiao, J. H.; Chen, Jeng-Chung

    2014-02-14

    We investigated the behavior of the zero-bias anomaly in quantum wires that were embedded with impurities. The linear conductance G can exhibit cusp features that evolve with the positions of the impurities, and these features can be continuously changed using a combination of spit-gate and top-gate voltages. ZBA is observed regardless of the presence of impurity. Kondo model is inadequate for describing the behaviors of both G and ZBA. Despite the presence of impurity scattering, various ZBA behaviors that resemble those reported in clean quantum wires can be observed. Our results suggest that ZBA is an intrinsic phenomenon in a quantum wire, and its temperature and magnetic field dependence does not pertain to the Kondo correlations in quantum dot.

  19. Mass-Imbalanced Superconductivity in Effective Two-Channel Kondo Lattice

    NASA Astrophysics Data System (ADS)

    Kusunose, Hiroaki

    2016-11-01

    We propose that mass-imbalanced superconductivity is realized in an effective two-channel Kondo lattice, and its characteristic property appears in electromagnetic responses such as the Meissner effect. Starting from an effective two-channel Kondo lattice model as a low-energy effective theory, and approximating it with two mean-field order parameter components in a self-consistent fashion, it is shown that the balance of the two components is sensitively reflected in the magnitude of the Meissner kernel, while thermodynamic properties are little affected by the balance. This remarkable behavior is understood by the localized character of one partner in the Cooper pair, namely, the effect of the mass imbalance. We briefly mention the relevance to the huge enhancement of the upper critical field under pressure observed in Pr 1-2-20 systems.

  20. A molecular approach to the Kondo problem in Carbon based systems

    NASA Astrophysics Data System (ADS)

    Soriano, Maria; Jacob, David; Palacios, Juan Jose

    2014-03-01

    There has been a great effort in recent years to understand the emerging Kondo-like resonances in different magnetic molecules such as MnPc. Theoretical approaches based on atomic models have proven to be very useful for the study of this phenomenon when the magnetic moment is essentially localized on a magnetic atom. Nevertheless the Kondo effect can arise in pure carbon-based systems as has been demonstrated experimentally in fullerenes and carbon nanotubes. In this communication we present a multiorbital Anderson model where the orbitals are not atomic but molecular orbitals. This model is fully obtained from Density Functional Theory calculation in combination with Green's functions methodologies. Standard impurity solver techniques are used to solve the model which is applied to fullerenes and other nanographene structures.

  1. A fully first-principles approach to the Molecular Kondo problem

    NASA Astrophysics Data System (ADS)

    Soriano, Maria; Jacob, David; Palacios, Juan José; Atomelix Team

    2015-03-01

    There has been a great effort in recent years to understand the emerging Kondo-like resonances in different magnetic molecules such as MnPc. Theoretical approaches based on atomic models have proven to be very useful for the study of this phenomenon when the magnetic moment is essentially localized on a magnetic atom. Nevertheless the Kondo effect can arise in pure carbon-based systems as has been demonstrated experimentally in fullerenes and carbon nanotubes. In this communication we present a multiorbital Anderson model where the orbitals are not atomic but molecular orbitals. This model is fully obtained from Density Functional Theory calculation in combination with Green's functions methodologies. Standard impurity solver techniques are used to solve the model which is applied to fullerenes and other nanographene structures.

  2. Evidence for charge Kondo effect in superconducting Tl-doped PbTe

    SciTech Connect

    Fisher, I

    2010-01-11

    We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude with the Tl concentration. The temperature and field dependence of this upturn are consistent with a charge Kondo effect involving degenerate Tl valence states differing by two electrons, with a characteristic Kondo temperature T{sub K} {approx} 6 K. The observation of such an effect supports an electronic pairing mechanism for superconductivity in this material and may account for the anomalously high T{sub c} values.

  3. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    PubMed Central

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-01-01

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin. PMID:26911258

  4. Theory of Fano Resonances in Graphene: The Kondo effect probed by STM

    SciTech Connect

    Wehling, T.O.

    2010-06-02

    We consider the theory of Kondo effect and Fano factor energy dependence for magnetic impurity (Co) on graphene. We have performed a first principles calculation and find that the two dimensional E{sub 1} representation made of d{sub xz}, d{sub yz} orbitals is likely to be responsible for the hybridization and ultimately Kondo screening for cobalt on graphene. There are few high symmetry sites where magnetic impurity atom can be adsorbed. For the case of Co atom in the middle of hexagon of carbon lattice we find anomalously large Fano q-factor, q {approx} 80 and strongly suppressed coupling to conduction band. This anomaly is a striking example of quantum mechanical interference related to the Berry phase inherent to graphene band structure.

  5. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    DOE PAGES

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-02-25

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. As a result, we characterize the zero-bias peaks and discuss their origin.

  6. Emergence of anisotropic heavy fermions in antiferromagnetic Kondo lattice CeIn3 revealed by photoemission

    NASA Astrophysics Data System (ADS)

    Zhang, Yun; Lu, Haiyan; Zhu, Xiegang; Tan, Shiyong; Chen, Qiuyun; Feng, Wei; Xie, Donghua; Luo, Lizhu; Zhang, Wen; Lai, Xinchun; Donglai Feng Team; Huiqiu Yuan Team

    One basic concept in heavy fermions systems is the entanglement of localized spin state and itinerant electron state. It can be tuned by two competitive intrinsic mechanisms, Kondo effect and Ruderman-Kittel-Kasuya-Yosida interaction, with external disturbances. The key issue regarding heavy fermions properties is how the two mechanisms work in the same phase region. To investigate the relation of the two mechanisms, the cubic antiferromagnetic heavy fermions compound CeIn3 was investigated by soft x-ray angle resolved photoemission spectroscopy. The hybridization between f electrons and conduction bands in the paramagnetic state was observed directly, providing compelling evidence for Kondo screening scenario and coexistence of two mechanisms. The hybridization strength shows slight and regular anisotropy in K space, implying that the two mechanisms are competitive and anisotropic. This work illuminates the concomitant and competitive relation between the two mechanisms and supplies some evidences for the anisotropic superconductivity of CeIn3

  7. Interplay between the Kondo effect and the Ruderman-Kittel-Kasuya-Yosida interaction.

    PubMed

    Prüser, Henning; Dargel, Piet E; Bouhassoune, Mohammed; Ulbrich, Rainer G; Pruschke, Thomas; Lounis, Samir; Wenderoth, Martin

    2014-11-11

    The interplay between the Ruderman-Kittel-Kasuya-Yosida interaction and the Kondo effect is expected to provide the driving force for the emergence of many phenomena in strongly correlated electron materials. Two magnetic impurities in a metal are the smallest possible system containing all these ingredients and define a bottom-up approach towards a long-term understanding of concentrated/dense systems. Here we report on the experimental and theoretical investigation of iron dimers buried below a Cu(100) surface by means of low-temperature scanning tunnelling spectroscopy combined with density functional theory and numerical renormalization group calculations. The Kondo effect, in particular the width of the Abrikosov-Suhl resonance, is strongly altered or even suppressed due to magnetic coupling between the impurities. It oscillates as a function of dimer separation revealing that it is related to indirect exchange interactions mediated by the conduction electrons.

  8. Intramolecularly resolved Kondo resonance of high-spin Fe (II ) -porphyrin adsorbed on Au ( 111 )

    NASA Astrophysics Data System (ADS)

    Wang, Weihua; Pang, Rui; Kuang, Guowen; Shi, Xingqiang; Shang, Xuesong; Liu, Pei Nian; Lin, Nian

    2015-01-01

    Using cryogenic scanning tunneling microscopy, we measured the electronic states and Kondo resonance of single Fe (II ) -porphyrin molecules adsorbed on a Au ( 111 ) surface with intramolecular resolution. We found that the Fe (II ) ion introduces a spin-polarized molecular state near the Fermi level. Tunneling spectroscopy revealed that this state gives rise to Kondo resonance exhibiting characteristics different from those of the Fe (II ) spin state. Spin-polarized density functional theory calculations revealed that the molecule was weakly adsorbed on the surface, yet still switches its spin configuration from S =1 to2 . The spin switching was found to be driven by three effects: a structural distortion of the macrocyclic ring from planar to saddle shaped, a weak chemical bonding between the Fe and the Au surface atom underneath, and weakened Fe-N bonds due to Au ( 111 ) -molecule charge transfer.

  9. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    NASA Astrophysics Data System (ADS)

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-02-01

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.

  10. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire.

    PubMed

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A; Gu, Genda; Mason, Nadya

    2016-02-25

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires--for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi(1.33)Sb(0.67))Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.

  11. Competition between Kondo and RKKY correlations in the presence of strong randomness.

    PubMed

    Tran, Minh-Tien; Kim, Ki-Seok

    2011-10-26

    We propose that competition between Kondo and magnetic correlations results in a novel universality class for heavy fermion quantum criticality in the presence of strong randomness. Starting from an Anderson lattice model with disorder, we derive an effective local field theory in the dynamical mean-field theory approximation, where randomness is introduced into both hybridization and Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions. Performing the saddle-point analysis in the U(1) slave-boson representation, we reveal its phase diagram which shows a quantum phase transition from a spin liquid state to a local Fermi liquid phase. In contrast with the clean limit case of the Anderson lattice model, the effective hybridization given by holon condensation turns out to vanish, resulting from the zero mean value of the hybridization coupling constant. However, we show that the holon density becomes finite when the variance of the hybridization is sufficiently larger than that of the RKKY coupling, giving rise to the Kondo effect. On the other hand, when the variance of the hybridization becomes smaller than that of the RKKY coupling, the Kondo effect disappears, resulting in a fully symmetric paramagnetic state, adiabatically connected to the spin liquid state of the disordered Heisenberg model. We investigate the quantum critical point beyond the mean-field approximation. Introducing quantum corrections fully self-consistently in the non-crossing approximation, we prove that the local charge susceptibility has exactly the same critical exponent as the local spin susceptibility, suggesting an enhanced symmetry at the local quantum critical point. This leads us to propose novel duality between the Kondo singlet phase and the critical local moment state beyond the Landau-Ginzburg-Wilson paradigm. The Landau-Ginzburg-Wilson forbidden duality serves the mechanism of electron fractionalization in critical impurity dynamics, where such fractionalized excitations are

  12. Localization at the edge of a 2D topological insulator by Kondo impurities with random anisotropies.

    PubMed

    Altshuler, B L; Aleiner, I L; Yudson, V I

    2013-08-23

    We consider chiral electrons moving along the one-dimensional helical edge of a two-dimensional topological insulator and interacting with a disordered chain of Kondo impurities. Assuming the electron-spin couplings of random anisotropies, we map this system to the problem of the pinning of the charge density wave by the disordered potential. This mapping proves that arbitrary weak anisotropic disorder in coupling of chiral electrons with spin impurities leads to the Anderson localization of the edge states.

  13. Spin fluctuations in the anisotropic Kondo insulator CeRu4 Sn6

    NASA Astrophysics Data System (ADS)

    Fuhrman, Wesley T.; Haenel, J.; Rodriguez, J.; Paschen, S.; Broholm, C. L.

    We report and model anisotropic quasi-elastic magnetic neutron scattering from single crystalline CeRu4Sn6. For T ~ 2 K the magnetic neutron scattering is broad in momentum (Q) with a persistent 1 / ℏω spectrum throughout the Brillouin zone. This indicates a lack of spatial coherence and no characteristic energy scale beyond the 0.2 meV resolution of the measurement. We find the Q-dependence of the scattering can be modeled by a Kondo-Heisenberg Hamiltonian that describes residual carriers and incompletely compensated localized electrons. These findings support the interpretation of tetragonal CeRu4Sn6 as an anisotropic or nodal Kondo insulator, markedly different from typical cubic Kondo insulators. We further discuss potential topological implications. Work at IQM was supported by the U.S. Department of Energy, office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-FG02-08ER4654. W.T.F. thanks the ARCS foundation and Lockheed Martin for additional support.

  14. Anisotropy induced Kondo splitting in a mechanically stretched molecular junction: A first-principles based study.

    PubMed

    Wang, Xiaoli; Hou, Dong; Zheng, Xiao; Yan, YiJing

    2016-01-21

    The magnetic anisotropy and Kondo phenomena in a mechanically stretched magnetic molecular junction are investigated by combining the density functional theory (DFT) and hierarchical equations of motion (HEOM) approach. The system is comprised of a magnetic complex Co(tpy-SH)2 sandwiched between adjacent gold electrodes, which is mechanically stretched in experiments done by Parks et al. [Science 328, 1370 (2010)]. The electronic structure and mechanical property of the stretched system are investigated via the DFT calculations. The HEOM approach is then employed to characterize the Kondo resonance features, based on the Anderson impurity model parameterized from the DFT results. It is confirmed that the ground state prefers the S = 1 local spin state. The structural properties, the magnetic anisotropy, and corresponding Kondo peak splitting in the axial stretching process are systematically evaluated. The results reveal that the strong electron correlations and the local magnetic properties of the molecule magnet are very sensitive to structural distortion. This work demonstrates that the combined DFT+HEOM approach could be useful in understanding and designing mechanically controlled molecular junctions.

  15. Two-channel Kondo effect and phonon-assisted transport in single-molecular junctions

    NASA Astrophysics Data System (ADS)

    Dias da Silva, Luis; Dagotto, Elbio

    2009-03-01

    The interplay between vibrational modes and Kondo physics is a fundamental aspect of transport properties of correlated molecular conductors. In this theoretical work, we study such interplay in a system consisting of a single molecule in a metallic break junction tuned (by gate voltages) to be in an ``odd-N'' coulomb blockade valley (Kondo-prone). The connection to left and right metallic leads creates the usual coupling to a conduction channel with left-right symmetry (the ``even"-parity channel). A center-of-mass vibrational mode introduces an additional, phonon-assisted tunneling through the asymmetric (``odd''-parity channel). Our numerical renormalization-group calculations reveal that the phonon-mediated coupling to the odd channel leads to the appearance of a two-channel Kondo (2chK) effect, characterized by a non-Fermi-liquid (NFL) fixed point. The ground-state has NFL properties for a critical value of the phonon-mediated coupling strength and critical lines are present for wide range of parameters, including the regime away from particle-hole symmetry. Signatures of this 2chK non-Fermi-liquid behavior are prominent in the thermodynamic properties as well as in the linear conductance.

  16. Interplay between Kondo screening and local singlets in SU (N) -symmetric cold atoms

    NASA Astrophysics Data System (ADS)

    Isaev, Leonid; Rey, Ana Maria

    2015-03-01

    We study collective phenomena in strongly interacting fermionic alkaline-earth atoms (AEAs) loaded in an optical lattice. Owing to the strong decoupling between electronic orbital and nuclear-spin degrees of freedom, AEAs prepared in the two lowest electronic states are predicted to obey an accurate SU (N > 2 I + 1) symmetry in their two-body collisions (I is the nuclear spin). The SU (N) symmetric models offer a great opportunity to generate exotic many-body behavior emerging from the increased degeneracy and strict conservation laws. We focus on a parameter regime that realizes an SU (N > 2) (Coqblin-Schrieffer) generalization of the usual Kondo lattice model, and show that for band fillings above one atom per site, the system exhibits a peculiar interplay between Kondo screening and formation of singlets between localized atoms. In the limit of large Kondo coupling, we derive an effective Hamiltonian and determine its phase diagram. Our results can be tested in experiments with ultracold 173 Yb or 87 Sr atoms and are relevant for the physics of heavy-fermion materials with magnetic frustration. Supported by AFOSR, MURI-AFOSR and NSF.

  17. Natural orbitals renormalization group approach to the two-impurity Kondo critical point

    NASA Astrophysics Data System (ADS)

    He, Rong-Qiang; Dai, Jianhui; Lu, Zhong-Yi

    2015-04-01

    The problem of two magnetic impurities in a normal metal exposes the two opposite tendencies in the formation of a singlet ground state, driven respectively by the single-ion Kondo effect with conduction electrons to screen impurity spins or the Ruderman-Kittel-Kasuya-Yosida interaction between the two impurities to directly form impurity spin singlet. However, whether the competition between these two tendencies can lead to a quantum critical point has been debated over more than two decades. Here, we study this problem by applying the newly proposed natural orbitals renormalization group method to a lattice version of the two-impurity Kondo model with a direct exchange K between the two impurity spins. The method allows for unbiased access to the ground state wave functions and low-lying excitations for sufficiently large system sizes. We demonstrate the existence of a quantum critical point, characterized by the power-law divergence of impurity staggered susceptibility with critical exponent γ =0.60 (1 ) , on the antiferromagnetic side of K when the interimpurity distance R is even lattice spacing, while a crossover behavior is recovered when R is odd lattice spacing. These results have ultimately resolved the long-standing discrepancy between the numerical renormalization group and quantum Monte Carlo studies, confirming a link of this two-impurity Kondo critical point to a hidden particle-hole symmetry predicted by the local Fermi liquid theory.

  18. Photoemission and the electronic properties of heavy fermions -- limitations of the Kondo model

    SciTech Connect

    Joyce, J.J.; Arko, A.J.; Andrews, A.B.

    1993-09-01

    The electronic properties of Yb-based heavy fermions have been investigated by means of high resolution synchrotron radiation photoemission and compared with predictions of the Kondo model. The Yb heavy fermion photoemission spectra show massive disagreement with the Kondo model predictions (as calculated within the Gunnarsson-Schonhammer computational method). Moreover, the Yb heavy fermion photoemission spectra give very strong indications of core-like characteristics and compare favorable to purely divalent Yb metal and core-like Lu 4f levels. The heavy fermions YbCu{sub 2}Si{sub 2}, YbAgCu{sub 4} and YbAl{sub 3} were measured and shown to have lineshapes much broader and deeper in binding energy than predicted by the Kondo model. The lineshape of the bulk component of the 4f emission for these three heavy fermion materials was compared with that from Yb metal and the Lu 4f levels in LuAl{sub 3}, the heavy fermion materials show no substantive spectroscopic differences from simple 4f levels observed in Yb metal and LuAl{sub 3}. Also, the variation with temperature of the 4f fineshape was measured for Yb metal and clearly demonstrates that phonon broadening plays a major role in 4f level lineshape analysis and must be accounted for before considerations of correlated electron resonance effects are presumed to be at work.

  19. Robust topological surface state in Kondo insulator SmB{sub 6} thin films

    SciTech Connect

    Yong, Jie Jiang, Yeping; Zhang, Xiaohang; Greene, Richard L.; Usanmaz, Demet; Curtarolo, Stefano; Li, Linze; Pan, Xiaoqing; Shin, Jongmoon; Takeuchi, Ichiro

    2014-12-01

    Fabrication of smooth thin films of topological insulators with true insulating bulk are extremely important for utilizing their novel properties in quantum and spintronic devices. Here, we report the growth of crystalline thin films of SmB{sub 6}, a topological Kondo insulator with true insulating bulk, by co-sputtering both SmB{sub 6} and B targets. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy indicate films that are polycrystalline with a (001) preferred orientation. When cooling down, resistivity ρ shows an increase around 50 K and saturation below 10 K, consistent with the opening of the hybridization gap and surface dominated transport, respectively. The ratio ρ{sub 2K}/ρ{sub 300K} is only about two, much smaller than that of bulk, which indicates a much larger surface-to-bulk ratio. Point contact spectroscopy using a superconductor tip on SmB{sub 6} films shows both a Kondo Fano resonance and Andeev reflection, indicating an insulating Kondo lattice with metallic surface states.

  20. Analysis of the Kane-Mele-Kondo lattice at finite temperatures

    NASA Astrophysics Data System (ADS)

    Yoshida, Tsuneya; Peters, Robert; Kawakami, Norio

    Recently, correlation effects on topological insulators are extensively studied because the interplay of topological properties and electron correlations is expected to induce exotic phenomena. A promising candidate for a topological insulator in heavy-fermion systems is ∖mathrmSmB6 where the Kondo effects play an essential role. In this article, we study the Kane-Mele-Kondo lattice at finite temperatures. By using the dynamical mean-field theory, we obtain a temperature vs. interaction phase diagram (a Doniach phase diagram). Furthermore, we have observed an intriguing crossover behavior induced by the interplay of electron correlations and topologically nontrivial properties. In the bulk system, the spin-Hall conductivity which is proportional to the spin Chern number is zero at low temperatures while the conductivity rapidly increases with increasing temperature. Correspondingly, gapless modes are restored by temperature effects at the edge sites, which are destroyed by the Kondo effect at low temperature. This work is partly supported by KAKENHI (No. 25400366, and 15H05855). The numerical calculations were performed at the ISSP in the University of Tokyo and on the SR16000 at YITP in Kyoto University.

  1. Transport in a hybrid normal metal/topological superconductor Kondo model

    NASA Astrophysics Data System (ADS)

    Chirla, Razvan; Dinu, I. V.; Moldoveanu, V.; Moca, Cǎtǎlin Paşcu

    2014-11-01

    We investigate the equilibrium and nonequilibrium transport through a quantum dot in the Kondo regime, embedded between a normal metal and a topological superconductor supporting Majorana bound states at its end points. We find that the Kondo physics is significantly modified by the presence of the Majorana modes. When the Majorana modes are coupled, aside from the Kondo scale TK, a new energy scale T*≪TK emerges, that controls the low-energy physics of the system. At low temperatures, the ac conductance is suppressed for frequencies below T*, while the noise spectrum acquires a ˜ω3 dependence. At high temperatures, T ≫TK , the regular logarithmic dependence in the differential conductance is also affected. Under nonequilibrium conditions, and in particular in the {T ,B }→0 limit, the differential conductance becomes negative. These findings indicate that the changes in transport may serve as clues for detecting the Majorana bound states in such systems. In terms of methods used, we characterize the transport by using a combination of perturbative and renormalization-group approaches.

  2. Controlling Kondo-like Scattering at the SrTiO3-based Interfaces

    PubMed Central

    Han, K.; Palina, N.; Zeng, S. W.; Huang, Z.; Li, C. J.; Zhou, W. X.; Wan, D.-Y.; Zhang, L. C.; Chi, X.; Guo, R.; Chen, J. S.; Venkatesan, T.; Rusydi, A.; Ariando, A

    2016-01-01

    The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti3+ ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti3+ ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface. PMID:27147407

  3. Controlling Kondo-like Scattering at the SrTiO3-based Interfaces.

    PubMed

    Han, K; Palina, N; Zeng, S W; Huang, Z; Li, C J; Zhou, W X; Wan, D-Y; Zhang, L C; Chi, X; Guo, R; Chen, J S; Venkatesan, T; Rusydi, A; Ariando

    2016-05-05

    The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti(3+) ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti(3+) ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface.

  4. Synthesis of semiconductor nanoparticles.

    PubMed

    Chen, Xianfeng; Dobson, Peter J

    2012-01-01

    Here, we describe typical methods and provide detailed experimental protocols for synthesizing and processing various semiconductor nanoparticles which have potential application in biology and medicine. These include synthesis of binary semiconductor nanoparticles; core@shell nanoparticles and alloyed nanoparticles; size-selective precipitation to obtain monodisperse nanoparticles; and strategies for phase transfer of nanoparticles from organic solution to aqueous media. PMID:22791427

  5. Evolution of the Coherent State and the Electronic Structure in the Kondo Insulator SmB6

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaohang; Butch, N. P.; Syers, P.; Ziemak, S.; Greene, R. L.; Paglione, J.

    2013-03-01

    As an exemplary Kondo insulator, SmB6 has been studied for several decades; however, direct evidence for the development of the Kondo coherent state and the evolution of the electronic structure in the material has not been obtained due to the rather complicated electronic and thermal transport behavior. Recently, these open questions attracted increasing attention as the emergence of a time-reversal invariant topological surface state in the Kondo insulator has been suggested. Here, we use the quasiparticle tunneling spectroscopy technique to directly investigate the temperature dependence of the electronic states in SmB6. As a signature of the Kondo screening effect in the material, a Fano-like resonance line shape is observed in the tunneling spectroscopy at temperatures below ~ 100 K. We further demonstrate that inter-ion correlation has to be taken into account in order to precisely describe the observed asymmetric tunneling conductance at low temperatures. Our quasiparticle tunneling spectroscopy results also provide important implications for the predicted nontrivial topology in the Kondo insulator. This work is supported by the NSF under Grant No. DMR-1104256.

  6. Unexpected observation of spatially separated Kondo scattering and ferromagnetism in Ta alloyed anatase TiO2 thin films

    PubMed Central

    Sarkar, T. P.; Gopinadhan, K.; Motapothula, M.; Saha, S.; Huang, Z.; Dhar, S.; Patra, A.; Lu, W. M.; Telesio, F.; Pallecchi, I.; Ariando; Marré, D.; Venkatesan, T.

    2015-01-01

    We report the observation of spatially separated Kondo scattering and ferromagnetism in anatase Ta0.06Ti0.94O2 thin films as a function of thickness (10–200 nm). The Kondo behavior observed in thicker films is suppressed on decreasing thickness and vanishes below ~25 nm. In 200 nm film, transport data could be fitted to a renormalization group theory for Kondo scattering though the carrier density in this system is lower by two orders of magnitude, the magnetic entity concentration is larger by a similar magnitude and there is strong electronic correlation compared to a conventional system such as Cu with magnetic impurities. However, ferromagnetism is observed at all thicknesses with magnetic moment per unit thickness decreasing beyond 10 nm film thickness. The simultaneous presence of Kondo and ferromagnetism is explained by the spatial variation of defects from the interface to surface which results in a dominantly ferromagnetic region closer to substrate-film interface while the Kondo scattering is dominant near the surface and decreasing towards the interface. This material system enables us to study the effect of neighboring presence of two competing magnetic phenomena and the possibility for tuning them. PMID:26265554

  7. On the zero-bias anomaly and Kondo physics in quantum point contacts near pinch-off.

    PubMed

    Xiang, S; Xiao, S; Fuji, K; Shibuya, K; Endo, T; Yumoto, N; Morimoto, T; Aoki, N; Bird, J P; Ochiai, Y

    2014-03-26

    We investigate the linear and non-linear conductance of quantum point contacts (QPCs), in the region near pinch-off where Kondo physics has previously been connected to the appearance of the 0.7 feature. In studies of seven different QPCs, fabricated in the same high-mobility GaAs/AlGaAs heterojunction, the linear conductance is widely found to show the presence of the 0.7 feature. The differential conductance, on the other hand, does not generally exhibit the zero-bias anomaly (ZBA) that has been proposed to indicate the Kondo effect. Indeed, even in the small subset of QPCs found to exhibit such an anomaly, the linear conductance does not always follow the universal temperature-dependent scaling behavior expected for the Kondo effect. Taken collectively, our observations demonstrate that, unlike the 0.7 feature, the ZBA is not a generic feature of low-temperature QPC conduction. We furthermore conclude that the mere observation of the ZBA alone is insufficient evidence for concluding that Kondo physics is active. While we do not rule out the possibility that the Kondo effect may occur in QPCs, our results appear to indicate that its observation requires a very strict set of conditions to be satisfied. This should be contrasted with the case of the 0.7 feature, which has been apparent since the earliest experimental investigations of QPC transport.

  8. Finite temperature topological phase transitions and emergence of Dirac semi-metallic phases in a Kondo lattice

    NASA Astrophysics Data System (ADS)

    Chou, Po-Hao; Zhai, Liang-Jun; Chung, Chung-Hou; Lee, Ting-Kuo; Mou, Chung-Yu

    The energy gap in Dirac materials controls the topology and critical behaviors of the quantum phase transition associated with the critical point when the gap vanishes. However, it is often difficult to access the critical point as it requires tunablity of electronic structures. Here by exploiting the many-body screening interaction of localized spins and conduction electrons in a Kondo lattice, we demonstrate that the electronic band structures in a Kondo lattice are tunable in temperature. When spin-orbit interactions are included, we find that below the Kondo temperature, the Kondo lattice is a strong topological insulator at low temperature and undergoes a topological transition to a weak topological insulator at a higher temperature TD. At TD, Dirac points emerge and the Kondo lattice becomes a Dirac semimetal. Our results indicate that the topological phase transition though a Dirac semi-metallic phase at finite temperatures also manifests profound physics and results in critical-like behavior both in magnetic and transport properties near TD. We acknowledge support from NCTS and Ministry of Science and Technology (MoST), Taiwan.

  9. Photoemission and magnetic circular dichroism studies of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Fujimori, Atsushi

    2005-03-01

    Recently, a series of novel ferromagnetic semiconductors have been synthesized using MBE and related techniques and have attracted much attention because of unknown mechanisms of carrier-induced ferromagnetism and potential applications as "spin electronics" devices. Some new materials show ferromagnetism even well above room temperature. Photoemission spectroscopy has been used to study the d orbitals of the dilute transition-metal atoms, mostly Mn, and their hybridization with the host band states [1]. Soft x-ray absorption spectroscopy (XAS) and magnetic circular dichroism (MCD) at the transition-metal 2p-3d absorption edges are useful techniques to study the valence and spin states of the transition-metal atoms. Furthermore, since MCD has different sensitivities to the ferromagnetic and paramagnetic components at different temperatures and magnetic fileds, if the sample is a mixture of ferromagnetic and non-ferromagnetic transition- metal atoms, it can be used to separate the two components and to study their electronic structures. In this talk, results are presented for the prototypical diluted ferromagnetic semiconductor Ga1-xMnxAs [2] and the room-temperature ferromagnets Zn1-xCoxO and Ti1-xCoxO2.I acknowledge collaboration with Y. Ishida, J.-I. Hwang, M. Kobayashi, Y. Takeda, Y. Saitoh, J. Okamoto, T. Okane, Y. Muramatsu, K. Mamiya, T. Koide, A. Tanaka, M. Tanaka, Hayashi, S. Ohya, T. Kondo, H. Munekata, H. Saeki, H. Tabata, T. Kawai, Y. Matsumoto, H. Koinuma, T. Fukumura and M. Kawasaki. This work was supported by a Grant-in-Aid for Scientific Research in Priority Area "Semiconductor nano-spintronics" (14076209) from MEXT, Japan.1. J. Okabayashi et al., Phys. Rev. B 64, 125304 (2001).2. A. Fujimori et al., J. Electron Spectrosc. Relat. Phenom., in press.

  10. Semiconductor active plasmonics

    NASA Astrophysics Data System (ADS)

    Mendach, Stefan; Nötzel, Richard

    2013-12-01

    Plasmonics is a research area in nanophotonics attracting increasing interest due to the potential applications in sensing and detecting, sub-wavelength confinement of light, integrated circuits, and many others. In particular, when plasmonic structures such as metal nanostructures or highly doped semiconductor particles are combined with active semiconductor materials and nanostructures, novel exciting physics and applications arise. This special section on semiconductor active plasmonics covers several of the most important and complementary directions in the field. First is the modification of the optical properties of a semiconductor nanostructure due to the close proximity of a metallic film or nanostructure. These arise from the formation hybrid plasmon/exciton states and may lead to enhanced spontaneous emission rates, directional far field emission patterns, strong coupling phenomena, and many more. Second is the realization of sub-wavelength scale nanolasers by coupling a semiconductor gain medium with a plasmonic metallic cavity. Particular emphasis is given on the major technical challenges in the fabrication of these nanolasers, such as device patterning, surface passivation, and metal deposition. While the above topics address mainly active structures and devices operating in the visible or near-infrared wavelength region, in the third, the enhanced THz extinction by periodic arrays of semiconductor particles is discussed. This is based on the build-up of surface plasmon resonances in the doped semiconductor particles which can be resonantly coupled and widely tuned by the carrier density in the semiconductor. We believe these highly diverse aspects give insight into the wide variety of new physics and applications that semiconductor active plasmonics is offering. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support, and we would also like to thank the contributors for their efforts and participation

  11. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  12. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  13. Fano Antiresonance and Kondo Resonance for Electronic Transport Through a Laterally Coupled Carbon-Nanotube Quantum-Dot System

    NASA Astrophysics Data System (ADS)

    Huo, Dong-Ming

    2015-10-01

    We present nonequilibrium Green function calculations for electronic transport through a laterally coupled carbon-nanotube quantum-dot system. In this system, a one-dimensional double carbon nanotube quantum dot attached to polarised electrodes forms a main channel for electronic tunnelling. Each carbon nanotube quantum dot in the main channel couples to a dangling carbon nanotube quantum dot. Then, the conductance spectrum is calculated. The insulating band and resonance peak in this spectrum, due to Fano antiresonance and Kondo resonance, are discussed. The intradot electron's Coulomb interaction effect on the insulating band is also investigated. By controlling the coupling coefficient between the quantum dots, we can realise mutual transformation between Kondo resonance and Fano antiresonance at the Fermi level. The spin-orbit coupling and magnetic field's influence on the Kondo resonance peak are discussed in detail. Finally, spin magnetic moment and orbital magnetic moment of electrons in the quantum dot by applying parallel magnetic field are also predicted.

  14. Kondo Impurities in the Kitaev Spin Liquid: Numerical Renormalization Group Solution and Gauge-Flux-Driven Screening.

    PubMed

    Vojta, Matthias; Mitchell, Andrew K; Zschocke, Fabian

    2016-07-15

    Kitaev's honeycomb-lattice compass model describes a spin liquid with emergent fractionalized excitations. Here, we study the physics of isolated magnetic impurities coupled to the Kitaev spin-liquid host. We reformulate this Kondo-type problem in terms of a many-state quantum impurity coupled to a multichannel bath of Majorana fermions and present the numerically exact solution using Wilson's numerical renormalization group technique. Quantum phase transitions occur as a function of Kondo coupling and locally applied field. At zero field, the impurity moment is partially screened only when it binds an emergent gauge flux, while otherwise it becomes free at low temperatures. We show how Majorana degrees of freedom determine the fixed-point properties, make contact with Kondo screening in pseudogap Fermi systems, and discuss effects away from the dilute limit. PMID:27472132

  15. Kondo Impurities in the Kitaev Spin Liquid: Numerical Renormalization Group Solution and Gauge-Flux-Driven Screening

    NASA Astrophysics Data System (ADS)

    Vojta, Matthias; Mitchell, Andrew K.; Zschocke, Fabian

    2016-07-01

    Kitaev's honeycomb-lattice compass model describes a spin liquid with emergent fractionalized excitations. Here, we study the physics of isolated magnetic impurities coupled to the Kitaev spin-liquid host. We reformulate this Kondo-type problem in terms of a many-state quantum impurity coupled to a multichannel bath of Majorana fermions and present the numerically exact solution using Wilson's numerical renormalization group technique. Quantum phase transitions occur as a function of Kondo coupling and locally applied field. At zero field, the impurity moment is partially screened only when it binds an emergent gauge flux, while otherwise it becomes free at low temperatures. We show how Majorana degrees of freedom determine the fixed-point properties, make contact with Kondo screening in pseudogap Fermi systems, and discuss effects away from the dilute limit.

  16. Non-Kondo-like electronic structure in the correlated rare-earth hexaboride YbB(6).

    PubMed

    Neupane, Madhab; Xu, Su-Yang; Alidoust, Nasser; Bian, Guang; Kim, D J; Liu, Chang; Belopolski, I; Chang, T-R; Jeng, H-T; Durakiewicz, T; Lin, H; Bansil, A; Fisk, Z; Hasan, M Z

    2015-01-01

    We present angle-resolved photoemission studies on the rare-earth-hexaboride YbB(6), which has recently been predicted to be a topological Kondo insulator. Our data do not agree with the prediction and instead show that YbB(6) exhibits a novel topological insulator state in the absence of a Kondo mechanism. We find that the Fermi level electronic structure of YbB(6) has three 2D Dirac cone like surface states enclosing the Kramers's points, while the f orbital that would be relevant for the Kondo mechanism is ∼1  eV below the Fermi level. Our first-principles calculation shows that the topological state that we observe in YbB(6) is due to an inversion between Yb d and B p bands. These experimental and theoretical results provide a new approach for realizing novel correlated topological insulator states in rare-earth materials.

  17. SLM based semiconductor maskwriter

    NASA Astrophysics Data System (ADS)

    Diez, Steffen; Jehle, Achim

    2015-09-01

    The high-end semiconductor mask fabrication is dominated by e-beam technology. But still more than 50% of all semiconductor masks are produced by laser writers. The current laser writers are based on the same technology that was used 25 years ago. They are reliable and fast but not very economical. Heidelberg Instruments has developed a new economical and fast laser writer based on the latest technologies.

  18. Strained-bond semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1994-05-01

    Theories of strained-bond semiconductors and superconductors have been developed that promise to have significant impact on future electronic devices of interest to the Air Force. These include: (1) development of a theory of high-temperature superconductivity based on the idea of strained-layer superlattices, (2) elucidation of the physics of doping in Type-2 semiconductor superlattices, which is now central to the development of high-speed field-effect transistors, (3) a theory of dimerization and reconstruction on (001) semiconductor surfaces, (4) theory of Mobius transforms as applied to physics and remote sensing, (5) new understanding of how defects affect the vibrational properties of semiconductors, (6) new methods of efficiently computing the trajectories of atoms in semiconductors by a priori molecular dynamics, (7) elucidation of the criteria affecting quantum-well luminescence from Si, (8) models of the effects of vacancies in large-gap Al(x)Ga(1-x)N alloys, (9) physics of rare-earth-doped silicon, (10) models of Co adsorption to silicon surfaces, (11) theories of how defects affect the properties of large band-gap superlattices, and (12) models of the effects of electronic structure on the properties of semiconductors.

  19. Extraordinary Hall effect in Kondo-type systems: Contributions from anomalous velocity

    NASA Astrophysics Data System (ADS)

    Levy, P. M.

    1988-10-01

    Kondo systems exhibit a relatively large extraordinary Hall effect which is due to asymmetric resonant scattering of conduction electrons. Theories based on the skew scattering mechanism account for data at high temperatures T>TK (the Kondo temperature) but are unable to explain the very-low-temperature variation of the Hall constant observed in heavy-fermion compounds. Aside from the ordinary Hall effect, caused by the Lorentz force and skew scattering (which makes the scattering probability antisymmetric with respect to interchange of scattering vectors), there exists an additional contribution to the Hall effect known as the anomalous-velocity contribution. This contribution is due to a change in the expression for the current operator in the presence of spin-orbit forces. We derive an expression for the anomalous velocity in terms of the T matrices describing conduction-electron scattering; it is not limited to weak spin-orbit scattering as were previous results. We use the Anderson model of local moments in metals to write this scattering in terms of the mixing interaction between local and conduction electrons, and the local state's Green's function. The transverse Hall current due to anomalous velocity is determined and evaluated in two limits. At high temperature, we use the weak-coupling form of the local state's Green's function; at T=0 K a phase-shift analysis is used, and we rely on the Friedel-Langreth sum rule to give us the phase shift at the Fermi surface. At high temperatures we find that the contribution from anomalous velocity to the Hall constant is quite small compared to that from skew scattering. On the contrary, at low temperatures the anomalous velocity makes the dominant contribution to the Hall constant in Kondo systems.

  20. Local Kondo screening and spatial coherence in YbRh2Si2

    NASA Astrophysics Data System (ADS)

    Wirth, Steffen

    2012-02-01

    Heavy fermion metals are often characterized by a variety of relevant energy scales and competing interactions which may result in such fascinating phenomena as quantum criticality and unconventional superconductivity. Therefore, these materials have advanced to suitable model systems by means of which electronic interactions can be studied in detail. This will be discussed for the interplay of localized and itinerant electronic states in Kondo lattice systems in which heavy charge carriers are generated. We investigate the generic Kondo lattice system YbRh2Si2, one of the heaviest heavy fermion metals, by utilizing atomically resolved Scanning Tunneling Spectroscopy (STS) [1]. An analysis of the topography allows for a determination of the terminating surface as well as a comparison to results from chemical analysis. Importantly, the crystal field excitations are unambiguously reflected by our STS measurements, clearly relating STS to bulk properties. The hybridization of conduction and 4f electrons results in a gap-like feature in the tunneling conductance. In addition, a strongly temperature dependent peak in the tunneling conductance is attributed to a resonance resulting from the Kondo lattice. The experimental data are discussed in relation to results obtained within the non-crossing approximation (NCA) and renormalized band structure calculation. In a brief outlook we discuss further investigations by STS, e.g. with respect to the quantum critical phenomena observed in YbRh2Si2 [2], to substitutions-induced changes of the relevant energy scales [3], or on heavy fermion superconductors. [4pt] [1] S. Ernst et al., Nature 474 (2011) 362.[0pt] [2] S. Friedemann et al., Proc. Natl. Acad. Sci. USA 107 (2010) 14547.[0pt] [3] S. Friedemann et al., Nature Phys. 5 (2009) 465.

  1. Magnetically tunable Kondo-Aharonov-Bohm effect in a triangular quantum dot.

    PubMed

    Kuzmenko, T; Kikoin, K; Avishai, Y

    2006-02-01

    The role of discrete orbital symmetry in mesoscopic physics is manifested in a system consisting of three identical quantum dots forming an equilateral triangle. Under a perpendicular magnetic field, this system demonstrates a unique combination of Kondo and Aharonov-Bohm features due to an interplay between continuous [spin-rotation SU(2)] and discrete (permutation C3v) symmetries, as well as U(1) gauge invariance. The conductance as a function of magnetic flux displays sharp enhancement or complete suppression depending on contact setups.

  2. Vibration-induced Kondo tunneling through metal-organic complexes with even electron occupation number.

    PubMed

    Kikoin, K; Kiselev, M N; Wegewijs, M R

    2006-05-01

    We investigate transport through a mononuclear transition-metal complex with strong tunnel coupling to two electrodes. The ground state of this molecule is a singlet, while the first excited state is a triplet. We show that a modulation of the tunnel-barrier due to a molecular distortion which couples to the tunneling induces a Kondo-effect, provided the discrete vibrational energy compensates the singlet-triplet gap. We discuss the single-phonon and two-phonon-assisted cotunneling and possible experimental realization of the theory.

  3. {ital Ab Initio} Calculation of Crystalline Electric Fields and Kondo Temperatures in Ce Compounds

    SciTech Connect

    Han, J.; Alouani, M.; Cox, D.; Han, J.; Cox, D.; Alouani, M.

    1997-02-01

    We have calculated the band-f hybridizations for Ce{sub x}La{sub 1-x}M{sub 3} compounds (x=1 and x{r_arrow}0; M=Pb,In,Sn,Pd) within the local density approximation and fed this into a noncrossing approximation for the Anderson impurity model applied to both dilute and concentrated limits. Our calculations produce crystalline electric field splittings and Kondo temperatures with trends in good agreement with experiment and demonstrate the need for detailed electronic structure information on hybridization to describe the diverse behaviors of these Ce compounds. {copyright} {ital 1997} {ital The American Physical Society}

  4. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  5. Photoinduced superconductivity in semiconductors

    NASA Astrophysics Data System (ADS)

    Goldstein, Garry; Aron, Camille; Chamon, Claudio

    2015-02-01

    We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More realistically, we also show that superconductivity can be induced in a two-band semiconductor interacting with a broad-spectrum light source. We furthermore discuss the case of a three-band model in which the middle band replaces the broad-band reservoirs as the source of dissipation. In all three cases, we derive the simple conditions on the band structure, electron-electron interaction, and hybridization to the reservoirs that enable superconductivity. We compute the finite superconducting pairing and argue that the mechanism can be induced through both attractive and repulsive interactions and is robust to high temperatures.

  6. Kondo effect in a carbon nanotube with spin-orbit interaction and valley mixing: A DM-NRG study

    NASA Astrophysics Data System (ADS)

    Mantelli, Davide; Paşcu Moca, Cătălin; Zaránd, Gergely; Grifoni, Milena

    2016-03-01

    We investigate the effects of spin-orbit interaction (SOI) and valley mixing on the transport and dynamical properties of a carbon nanotube (CNT) quantum dot in the Kondo regime. As these perturbations break the pseudo-spin symmetry in the CNT spectrum but preserve time-reversal symmetry, they induce a finite splitting Δ between formerly degenerate Kramers pairs. Correspondingly, a crossover from the SU(4) to the SU(2)-Kondo effect occurs as the strength of these symmetry breaking parameters is varied. Clear signatures of the crossover are discussed both at the level of the spectral function as well as of the conductance. In particular, we demonstrate numerically and support with scaling arguments that the Kondo temperature scales inversely with the splitting Δ in the crossover regime. In presence of a finite magnetic field, time reversal symmetry is also broken. We investigate the effects of both parallel and perpendicular fields (with respect to the tube's axis) and discuss the conditions under which Kondo revivals may be achieved.

  7. Interplay between crystal field splitting and Kondo effect in CeNi9Ge(4-x)Si(x).

    PubMed

    Gold, C; Gross, P; Peyker, L; Eickerling, G; Simeoni, G G; Stockert, O; Kampert, E; Wolff-Fabris, F; Michor, H; Scheidt, E-W

    2012-09-01

    The pseudo-ternary solid solution CeNi(9)Ge(4-x)Si(x) (0 ≤ x ≤ 4) has been investigated by means of x-ray diffraction, magnetic susceptibility, specific heat, electrical resistivity, thermopower and inelastic neutron scattering studies. The isoelectronic substitution of germanium by silicon atoms causes a dramatic change of the relative strength of competing Kondo, RKKY and crystal field (CF) energy scales. The strongest effect is the continuous elevation of the Kondo temperature T(K) from approximately 3.5 K for CeNi(9)Ge(4) to about 70 K for CeNi(9)Si(4). This increase of the Kondo temperature is attended by a change of the CF level scheme of the Ce ions. The interplay of the different energy scales results in an incipient reduction of the ground state degeneracy from an effectively fourfold degenerate non-magnetic Kondo ground state with unusual non-Fermi-liquid features of CeNi(9)Ge(4) to a lower one, followed by an increase towards a sixfold, fully degenerate ground state multiplet in CeNi(9)Si(4) (T(K) ∼ Δ(CF)).

  8. Kondo Effect in CeXc (Xc = S, Se, Te) Studied by Electrical Resistivity Measurements under High Pressure

    NASA Astrophysics Data System (ADS)

    Hayashi, Yuya; Takai, Shun; Matsumura, Takeshi; Tanida, Hiroshi; Sera, Masafumi; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Ochiai, Akira

    2016-03-01

    We have measured the electrical resistivity of cerium monochalcogenides, CeS, CeSe, and CeTe, under high pressures of up to 8 GPa. The pressure dependences of the antiferromagnetic ordering temperature TN, crystal field splitting, and the ln T anomaly of the Kondo effect have been studied to cover the entire region from the magnetic ordering regime at low pressure to the Fermi liquid regime at high pressure. TN initially increases with increasing pressure, and starts to decrease at high pressure as expected from Doniach’s diagram. Simultaneously, the ln T behavior in the resistivity is enhanced, indicating the enhancement of the Kondo effect by pressure. It is also characteristic of CeXc that the crystal field splitting rapidly decreases at a common rate of -12.2 K/GPa. This leads to the increase in the degeneracy of the f state and the further enhancement of the Kondo effect. It is shown that the pressure-dependent degeneracy of the f state is a key factor for understanding the pressure dependence of TN, the Kondo effect, magnetoresistance, and the peak structure in the temperature dependence of resistivity.

  9. Pressure Dependence Transport Studies of the Possible Charge Kondo Effect in Tl-doped PbTe

    NASA Astrophysics Data System (ADS)

    Kurosaki, Yosuke; Shinagawa, Jun; Matsushita, Yana; Geballe, Ted; Fisher, Ian; Brown, Stuart

    2006-03-01

    Pb1-xTlxTe is noteworthy for a high superconducting transition temperature relative to carrier concentration, as well as normal state properties consistent with a charge-Kondo effect. Recent experiments also demonstrate that the onset of an observable superconducting Tc with Tl concentration at x˜0.3% coincides with features characteristic of charge Kondo [1], including dρ/dT<0 at low temperatures and an unusual linear variation of the resistivity ρ(T)=ρ0+AT at higher temperatures. Together, these observations are consistent with an association between the two phenomena [2]. We report the effect of applied pressures up to P˜1.5GPa on ρ(T), Tc, and the Hall number pH≡RH-1 for x= 0.3%, 0.8%, and 1.3%. Tc is reduced sharply with pressure, dTc/dP=400-500mK/GPa as the low temperature Kondo- like upturn in ρ(T) is weakened. Also, dA/dP<0 and dpH/dP>0. These observations are discussed in the context of the proposed charge-Kondo model for Pb1-xTlxTe. [1] Y. Matsushita, H. Bluhm, T.H. Geballe and I.R. Fisher, Phys.Rev.Lett. 94, 157002(2005).[2] M. Dzero and J. Schmalian, Phys.Rev.Lett. 94, 157003 (2005). This work is supported by NSF frant DMR-0520552.

  10. Superconductivity in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Bustarret, E.

    2015-07-01

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  11. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  12. Semiconductor laser diode

    SciTech Connect

    Amann, M.C.

    1982-09-28

    A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

  13. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  14. Breakdown of the Kondo insulating state in SmB6 by introducing Sm vacancies

    NASA Astrophysics Data System (ADS)

    Valentine, Michael E.; Koohpayeh, Seyed; Phelan, W. Adam; McQueen, Tyrel M.; Rosa, Priscila F. S.; Fisk, Zachary; Drichko, Natalia

    2016-08-01

    We explore the stability of the hybridization gap in SmB6 to the presence of a small number of Sm vacancies typical for this material, and demonstrate the extreme fragility of the Kondo insulating state. For the most stoichiometric sample we detect the hybridization gap which appears below 50 K as a depressed electronic Raman intensity below about 30 meV. The spectral weight that shifts to higher frequencies on the opening of the hybridization gap forms two electronic maxima at 100 and 41 meV. We assign these maxima to the excitations between hybridized 4 f -5 d bands using recent band structure calculations. Below 30 K, in-gap exciton modes with long lifetimes protected by the hybridization gap develop at 16-18 meV. With the increase of the number of Sm vacancies the exciton features broaden, evidencing a decrease in the lifetime due to the presence of electronic states in the gap. At a concentration of Sm vacancies of only about 1% the in-gap exciton is completely quenched, and the hybridization gap is not fully opened. We suggest that only the most stoichiometric SmB6 samples possess a bulk gap necessary for the topological Kondo insulator state.

  15. Formation of metallic magnetic clusters in a Kondo-lattice metal: Evidence from an optical study

    PubMed Central

    Kovaleva, N. N.; Kugel, K. I.; Bazhenov, A. V.; Fursova, T. N.; Löser, W.; Xu, Y.; Behr, G.; Kusmartsev, F. V.

    2012-01-01

    Magnetic materials are usually divided into two classes: those with localised magnetic moments, and those with itinerant charge carriers. We present a comprehensive experimental (spectroscopic ellipsomerty) and theoretical study to demonstrate that these two types of magnetism do not only coexist but complement each other in the Kondo-lattice metal, Tb2PdSi3. In this material the itinerant charge carriers interact with large localised magnetic moments of Tb(4f) states, forming complex magnetic lattices at low temperatures, which we associate with self-organisation of magnetic clusters. The formation of magnetic clusters results in low-energy optical spectral weight shifts, which correspond to opening of the pseudogap in the conduction band of the itinerant charge carriers and development of the low- and high-spin intersite electronic transitions. This phenomenon, driven by self-trapping of electrons by magnetic fluctuations, could be common in correlated metals, including besides Kondo-lattice metals, Fe-based and cuprate superconductors. PMID:23189239

  16. Dissipative phases in the one-dimensional Kondo-Heisenberg model

    NASA Astrophysics Data System (ADS)

    Lobos, Alejandro; Cazalilla, Miguel A.; Chudzinski, Piotr

    2012-02-01

    Atomic-sized magnetic structures built on clean metallic surfaces are currently under intense investigation [1]. Besides their potential uses in quantum information storage and processing, these systems allow to ask fundamental questions in condensed matter physics. In particular, the interplay between the Kondo effect (i.e., the screening of the atomic magnetic moment by conduction electrons) and Heisenberg exchange interactions between magnetic impurities has been recently investigated with scanning tunneling microscopy (STM) [2]. Inspired by the above developments, we study an one-dimensional chain of S=1/2 Kondo impurities coupled by anisotropic Heisenberg-Ising exchange and embedded in a two-dimensional metallic substrate. Remarkably, in the case of easy-plane exchange, we find a novel quantum phase exhibiting long-range order at zero temperature. We discuss implications of the existence of this phase for possible experiments. References: [1] R. Wiesendanger, RMP 81, 1495 (2009). [2] P. Wahl et al, PRL 98, 056601 (2007) and references therein.

  17. First-principles Calculation of the Single Impurity Surface Kondo Resonance

    NASA Astrophysics Data System (ADS)

    Lin, Chiung-Yuan; Castro Neto, Antonio; Jones, Barbara

    2007-03-01

    We have performed first-principles calculation of the surface and bulk wavefunctions of the Cu(111) surface and their hybridization energies to a Co adatom, including the potential scattering from the Co [1]. By analyzing the calculated hybridization energies, we have calculated the Kondo temperature to remarkable accuracy. We find the bulk states dominate the contribution to the Kondo temperature, in agreement with a recent experiment [2]. Furthermore, we also calculate the tunneling conductance of a scanning tunneling microscope on this system and compare our results with recent experiments of Co impurities in the Cu(111) surface. Good quantitative agreement is found at short parallel impurity-tip distances (< 6 angstroms). Our results indicate the need for a new formulation of the problem at larger distances. [1] C.-Y. Lin, A. H. Castro Neto, and B. A. Jones, Phys. Rev. Lett. 97, 156102 (2006). [2] N. Knorr, M. A. Schneider, L. Diekhoner, P. Wahl, and K. Kern, Phys. Rev. Lett. 88, 096804 (2002).

  18. Magnetic impurities in Cu nanocontacts: Kondo effect and conductance from first principles

    NASA Astrophysics Data System (ADS)

    Jacob, David; Haule, Kristjan; Kotliar, Gabriel

    2009-03-01

    We present ab initio calculations of the electronic structure and coherent transport properties of Cu nanocontacts hosting a single magnetic impurity (Fe,Co or Ni) in the contact region. The strong electron correlations of the impurity 3d-electrons are fully taken into account by combining density functional calculations with a dynamical treatment of the impurity 3d-shell in the so called one-crossing approximation. We find that for all three impurities the strong electron correlations give rise to Kondo resonances at the Fermi level which in turn lead to Fano lineshapes in the coherent transport characteristics of the nanocontact. The exact shape of the Kondo and Fano lineshapes, however, depends strongly on the impurity type and the geometry of the contact. This is in agreement with recent experiments measuring the conductance of magnetic impurities on noble metal surfaces [1-4]. [1] P. Wahl et al., Phys. Rev. Lett. 93, 176603 (2004). [2] N. N'eel et al., Phys. Rev. Lett. 98, 016801 (2007). [3] L. Vitali et al., Phys. Rev. Lett. 101, 216802 (2008). [4] N. N'eel et al., arXiv:0810.0236 (2008).

  19. Magnetic phenomena, ferro and antiferro Kondo, and transport in transition metal break junction nanocontacts

    NASA Astrophysics Data System (ADS)

    Tosatti, Erio

    2009-03-01

    Transport in transition metal break junctions is of particular interest in connection with magnetism, which may be present either in the leads, and/or in bridging magnetic impurities, or else which may emerge spontaneously at the nanocontact, as expected in pristine Pt or Pd.[1] The standard Landauer ballistic conductance across the locally magnetic atomic contact is modified by Kondo phenomena that are predicted using ab initio electronic structure as a starting point, and the numerical renormalization group as a tool. The case of a magnetic impurity in a nonmagnetic contact[2] is shown to illustrate the competition between antiferro and ferro Kondo screening[3] and its effects on conductance. *) Work in collaboration with A. Smogunov, A. Dal Corso, L. De Leo, P. Gentile, M. Fabrizio, P. Lucignano, and R. Mazzarello. [1] A. Delin, et al., Phys. Rev. Lett. 92, 057201 (2004); A. Smogunov et al., Phys. Rev. B78, 014423 (2008). [2] R. Mazzarello, P. Lucignano, A. Smogunov, M. Fabrizio, and E. Tosatti, in preparation [3] P. Gentile, L. De Leo, M. Fabrizio, and E. Tosatti, in preparation

  20. Heavy fermion and Kondo lattice behavior in the itinerant ferromagnet CeCrGe3.

    PubMed

    Das, Debarchan; Gruner, T; Pfau, H; Paramanik, U B; Burkhardt, U; Geibel, C; Hossain, Z

    2014-03-12

    Physical properties of polycrystalline CeCrGe3 and LaCrGe3 have been investigated by x-ray absorption spectroscopy, magnetic susceptibility χ(T), isothermal magnetization M(H), electrical resistivity ρ(T), specific heat C(T) and thermoelectric power S(T) measurements. These compounds are found to crystallize in the hexagonal perovskite structure (space group P63/mmc), as previously reported. The ρ(T), χ(T) and C(T) data confirm the bulk ferromagnetic ordering of itinerant Cr moments in LaCrGe3 and CeCrGe3 with TC = 90 K and 70 K respectively. In addition, a weak anomaly is also observed near 3 K in the C(T) data of CeCrGe3. The T dependences of ρ and finite values of Sommerfeld coefficient γ obtained from the specific heat measurements confirm that both the compounds are of metallic character. Further, the T dependence of ρ of CeCrGe3 reflects a Kondo lattice behavior. An enhanced γ of 130 mJ mol(-1) K(-2) together with the Kondo lattice behavior inferred from the ρ(T) establish CeCrGe3 as a moderate heavy fermion compound with a quasi-particle mass renormalization factor of ∼45. PMID:24553355

  1. Kondo effect in a neutral and stable all organic radical single molecule break junction

    NASA Astrophysics Data System (ADS)

    Burzuri, Enrique; Gaudenzi, Rocco; Frisenda, Riccardo; Franco, Carlos; Mas-Torrent, Marta; Rovira, Concepcio; Veciana, Jaume; Alcon, Isaac; Bromley, Stefan T.; van der Zant, Herre S. J.

    Organic radicals are neutral, purely organic molecules exhibiting an intrinsic magnetic moment due to the presence of an unpaired electron in the molecule in its ground state. This property, added to the low spin-orbit coupling makes organic radicals good candidates for molecular spintronics insofar as the radical character is stable in solid state electronic devices. We show that the paramagnetism of the PTM radical molecule, in the shape of a Kondo anomaly is preserved in two- and three-terminal solid-state devices, regardless of mechanical and electrostatic changes. Indeed, our results demonstrate that the Kondo anomaly is robust under electrodes displacement and changes of the electrostatic environment, pointing to a localized orbital in the radical as the source of magnetism. Strong support to this picture is provided by density functional calculations and measurements of the corresponding nonradical specie. We further study polyradical systems, where several unpaired spins interact in the same molecule. This work was supported by the EU FP7 program through project 618082 ACMOL and ERC grant advanced Mols@Mols. It was also supported by the Dutch funding organization NWO (VENI).

  2. Visualizing the formation of the Kondo lattice and the hidden order in URu2Si2

    PubMed Central

    Aynajian, Pegor; da Silva Neto, Eduardo H.; Parker, Colin V.; Huang, Yingkai; Pasupathy, Abhay; Mydosh, John; Yazdani, Ali

    2010-01-01

    Heavy electronic states originating from the f atomic orbitals underlie a rich variety of quantum phases of matter. We use atomic scale imaging and spectroscopy with the scanning tunneling microscope to examine the novel electronic states that emerge from the uranium f states in URu2Si2. We find that, as the temperature is lowered, partial screening of the f electrons’ spins gives rise to a spatially modulated Kondo–Fano resonance that is maximal between the surface U atoms. At T = 17.5 K, URu2Si2 is known to undergo a second-order phase transition from the Kondo lattice state into a phase with a hidden order parameter. From tunneling spectroscopy, we identify a spatially modulated, bias-asymmetric energy gap with a mean-field temperature dependence that develops in the hidden order state. Spectroscopic imaging further reveals a spatial correlation between the hidden order gap and the Kondo resonance, suggesting that the two phenomena involve the same electronic states. PMID:20498090

  3. Influence of Rashba spin-orbit coupling on the Kondo effect

    NASA Astrophysics Data System (ADS)

    Wong, Arturo; Ulloa, Sergio E.; Sandler, Nancy; Ingersent, Kevin

    2016-02-01

    An Anderson model for a magnetic impurity in a two-dimensional electron gas with bulk Rashba spin-orbit interaction is solved using the numerical renormalization group under two different experimental scenarios. For a fixed Fermi energy, the Kondo temperature TK varies weakly with Rashba coupling λR, as reported previously. If instead the band filling is low and held constant, increasing λR can drive the system into a helical regime with exponential enhancement of TK. Under either scenario, thermodynamic properties at low temperatures T exhibit the same dependencies on T /TK as are found for λR=0 . Unlike the conventional Kondo effect, however, the impurity exhibits static spin correlations with conduction electrons of nonzero orbital angular momentum about the impurity site. We also consider a magnetic field that Zeeman splits the conduction band but not the impurity level, an effective picture that arises under a proposed route to access the helical regime in a driven system. The impurity contribution to the system's ground-state angular momentum is found to be a universal function of the ratio of the Zeeman energy to a temperature scale that is not TK (as would be the case in a magnetic field that couples directly to the impurity spin), but rather is proportional to TK divided by the impurity hybridization width. This universal scaling is explained via a perturbative treatment of field-induced changes in the electronic density of states.

  4. Magnetotransport in (Ce1-xNdx)Cu6 Kondo alloys

    NASA Astrophysics Data System (ADS)

    Strydom, André M.; du Plessis, Paul de V.

    1999-03-01

    The results of electrical resistivity ρ(T) and magnetoresistivity MR(T, B) for $1.5 \\le T \\le 580$Kondo lattice is characterized through coherence effects in ρ(T) at low temperatures. The ρ(T) data above room temperature are used to resolve the electron-phonon scattering, and it is indicated that the single-ion Kondo interaction dominates both ρ(T) and MR(B) for a wide range of intermediate Ce concentrations. Based on this, the MR(B) data for different isotherms and alloy compositions are analysed according to the Bethe- ansatz description. We also discuss the observed deviations of our data from the preceding theoretical description due to the onset of magnetic order in alloys with high Nd content, and to phase coherence at low temperatures.

  5. Heavy-fermion quantum criticality and destruction of the Kondo effect in a nickel oxypnictide.

    PubMed

    Luo, Yongkang; Pourovskii, Leonid; Rowley, S E; Li, Yuke; Feng, Chunmu; Georges, Antoine; Dai, Jianhui; Cao, Guanghan; Xu, Zhu'an; Si, Qimiao; Ong, N P

    2014-08-01

    A quantum critical point arises at a continuous transformation between distinct phases of matter at zero temperature. Studies in antiferromagnetic heavy-fermion materials have revealed that quantum criticality has several classes, with an unconventional type that involves a critical destruction of the Kondo entanglement. To understand such varieties, it is important to extend the materials basis beyond the usual setting of intermetallic compounds. Here we show that a nickel oxypnictide, CeNiAsO, exhibits a heavy-fermion antiferromagnetic quantum critical point as a function of either pressure or P/As substitution. At the quantum critical point, non-Fermi-liquid behaviour appears, which is accompanied by a divergent effective carrier mass. Across the quantum critical point, the low-temperature Hall coefficient undergoes a rapid sign change, suggesting a sudden jump of the Fermi surface and a destruction of the Kondo effect. Our results imply that the enormous materials basis for the oxypnictides, which has been so crucial in the search for high-temperature superconductivity, will also play a vital role in the effort to establish the universality classes of quantum criticality in strongly correlated electron systems. PMID:24859644

  6. Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy.

    PubMed

    Brun, B; Martins, F; Faniel, S; Hackens, B; Bachelier, G; Cavanna, A; Ulysse, C; Ouerghi, A; Gennser, U; Mailly, D; Huant, S; Bayot, V; Sanquer, M; Sellier, H

    2014-06-30

    Quantum point contacts exhibit mysterious conductance anomalies in addition to well-known conductance plateaus at multiples of 2e(2)/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position.

  7. Critical-field theory of the Kondo lattice model in two dimensions

    SciTech Connect

    Kim, Ki-Seok

    2005-05-15

    In the context of the U(1) slave-boson theory we derive a critical-field theory near the quantum-critical point of the Kondo lattice model in two spatial dimensions. First, we argue that strong gauge fluctuations in the U(1) slave-boson theory give rise to confinement between spinons and holons, thus causing 'neutralized' spinons in association with the slave-boson U(1) gauge field. Second, we show that critical fluctuations of Kondo singlets near the quantum-critical point result in a new U(1) gauge field. This emergent gauge field has nothing to do with the slave-boson U(1) gauge field. Third, we find that the slave-boson U(1) gauge field can be exactly integrated out in the low-energy limit. As a result we find a critical-field theory in terms of renormalized conduction electrons and neutralized spinons interacting via the new emergent U(1) gauge field. Based on this critical-field theory we obtain the temperature dependence of the specific heat and the imaginary part of the self-energy of the renormalized electrons. These quantities display non-Fermi-liquid behavior near the quantum-critical point.

  8. Universal spatial correlations in the anisotropic Kondo screening cloud: Analytical insights and numerically exact results from a coherent state expansion

    NASA Astrophysics Data System (ADS)

    Florens, Serge; Snyman, Izak

    2015-11-01

    We analyze the spatial correlation structure of the spin density of an electron gas in the vicinity of an antiferromagnetically coupled Kondo impurity. Our analysis extends to the regime of spin-anisotropic couplings, where there are no quantitative results for spatial correlations in the literature. We use an original and numerically exact method, based on a systematic coherent-state expansion of the ground state of the underlying spin-boson Hamiltonian. It has not yet been applied to the computation of observables that are specific to the fermionic Kondo model. We also present an important technical improvement to the method that obviates the need to discretize modes of the Fermi sea, and allows one to tackle the problem in the thermodynamic limit. As a result, one can obtain excellent spatial resolution over arbitrary length scales, for a relatively low computational cost, a feature that gives the method an advantage over popular techniques such as the numerical and density-matrix renormalization groups. We find that the anisotropic Kondo model shows rich universal scaling behavior in the spatial structure of the entanglement cloud. First, SU(2) spin-symmetry is dynamically restored in a finite domain in the parameter space in the vicinity of the isotropic line, as expected from poor man's scaling. More surprisingly, we are able to obtain in closed analytical form a set of different, yet universal, scaling curves for strong exchange asymmetry, which are parametrized by the longitudinal exchange coupling. Deep inside the cloud, i.e., for distances smaller than the Kondo length, the correlation between the electron spin density and the impurity spin oscillates between ferromagnetic and antiferromagnetic values at the scale of the Fermi wavelength, an effect that is drastically enhanced at strongly anisotropic couplings. Our results also provide further numerical checks and alternative analytical approximations for the Kondo overlaps that were recently computed by

  9. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  10. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  11. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  12. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  13. Pressure-tuned quantum criticality in the antiferromagnetic Kondo semimetal CeNi2–δAs2

    SciTech Connect

    Luo, Yongkang; Ronning, F.; Wakeham, N.; Lu, Xin; Park, Tuson; Xu, Z. -A.; Thompson, J. D.

    2015-10-19

    The easily tuned balance among competing interactions in Kondo-lattice metals allows access to a zero-temperature, continuous transition between magnetically ordered and disordered phases, a quantum-critical point (QCP). Indeed, these highly correlated electron materials are prototypes for discovering and exploring quantum-critical states. Theoretical models proposed to account for the strange thermodynamic and electrical transport properties that emerge around the QCP of a Kondo lattice assume the presence of an indefinitely large number of itinerant charge carriers. Here, we report a systematic transport and thermodynamic investigation of the Kondo-lattice system CeNi2–δAs2 (δ ≈ 0.28) as its antiferromagnetic order is tuned by pressure and magnetic field to zero-temperature boundaries. These experiments show that the very small but finite carrier density of ~0.032 e/formular unit in CeNi2–δAs2 leads to unexpected transport signatures of quantum criticality and the delayed development of a fully coherent Kondo-lattice state with decreasing temperature. Here, the small carrier density and associated semimetallicity of this Kondo-lattice material favor an unconventional, local-moment type of quantum criticality and raises the specter of the Nozières exhaustion idea that an insufficient number of conduction-electron spins to separately screen local moments requires collective Kondo screening.

  14. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  15. Semiconductor eutectic solar cell

    NASA Astrophysics Data System (ADS)

    Yue, A. S.; Yu, J. G.

    1986-12-01

    Two-phase semiconducting eutectics are potential device-materials. Of these, the SnSe-SnSe2 eutectic was chosen for studies in detail because it consists of multi-p/n-layers of SnSe and SnSe2 semiconductors. Since plasma frequency has not been detected in its infrared reflectance spectrum up to 40 micrometers of wavelength, it suggests that the SnSe-SnSe2 eutectic is a nondegenerate semiconductor. As-grown SnSe2 single crystals have hexagonal crystallographic structure and show n-type conductivity. Polycrystalline SnSe and SnSe2 films have been successfully prepared in vacuum using a close-space-vapor transport technique.

  16. Light amplification using semiconductors

    SciTech Connect

    Dupuis, R.D.

    1987-06-01

    During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

  17. Majorana modes and Kondo effect in a quantum dot attached to a topological superconducting wire (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Vernek, Edson; Ruiz-Tijerina, David; da Silva, Luis D.; Egues, José Carlos

    2015-09-01

    Quantum dot attached to topological wires has become an interesting setup to study Majorana bound state in condensed matter[1]. One of the major advantage of using a quantum dot for this purpose is that it provides a suitable manner to study the interplay between Majorana bound states and the Kondo effect. Recently we have shown that a non-interacting quantum dot side-connected to a 1D topological superconductor and to metallic normal leads can sustain a Majorana mode even when the dot is empty. This is due to the Majorana bound state of the wire leaking into the quantum dot. Now we investigate the system for the case in which the quantum dot is interacting[3]. We explore the signatures of a Majorana zero-mode leaking into the quantum dot, using a recursive Green's function approach. We then study the Kondo regime using numerical renormalization group calculations. In this regime, we show that a "0.5" contribution to the conductance appears in system due to the presence of the Majorana mode, and that it persists for a wide range of the dot parameters. In the particle-hole symmetric point, in which the Kondo effect is more robust, the total conductance reaches 3e^2/2h, clearly indicating the coexistence of a Majorana mode and the Kondo resonance in the dot. However, the Kondo effect is suppressed by a gate voltage that detunes the dot from its particle-hole symmetric point as well as by a Zeeman field. The Majorana mode, on the other hand, is almost insensitive to both of them. We show that the zero-bias conductance as a function of the magnetic field follows a well-known universal curve. This can be observed experimentally, and we propose that this universality followed by a persistent conductance of 0.5,e^2/h are evidence for the presence of Majorana-Kondo physics. This work is supported by the Brazilians agencies FAPESP, CNPq and FAPEMIG. [1] A. Y. Kitaev, Ann.Phys. {bf 303}, 2 (2003). [2] E. Vernek, P.H. Penteado, A. C. Seridonio, J. C. Egues, Phys. Rev. B {bf

  18. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  19. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  20. Interference effects and Fano resonance in transport across a two dot system in the Kondo regime

    NASA Astrophysics Data System (ADS)

    Sztenkiel, D.; Swirkowicz, R.

    2007-09-01

    Transport across a double dot system of a special geometry with two channels accessible for tunneling electrons is theoretically studied in a region of low temperatures corresponding to the Kondo regime, and interference effects are analyzed. The spectral function and the linear conductance are calculated using the Green function formalism based on the equation of motion method. It is shown that interference processes strongly influence the spectral function. Moreover, due to interference effects the conductance, which is close to zero in a low energy region, shows at higher gate voltages a well defined Fano resonance. A development of the Fano peak as the system undergoes a gradual transition from the serial configuration to the geometry with two dots partially connected to both electrodes is demonstrated. The position and intensity of the Fano resonance strongly depend on the inter-dot tunneling rate. The influence of temperature on the resonance is also discussed.

  1. Tunneling and Josephson effects in odd-frequency superconductor junctions: A study on multichannel Kondo chain

    NASA Astrophysics Data System (ADS)

    Hoshino, Shintaro; Yada, Keiji; Tanaka, Yukio

    2016-06-01

    Junction systems of odd-frequency (OF) superconductors are investigated based on a mean-field Hamiltonian formalism. One-dimensional two-channel Kondo lattice (TCKL) is taken as a concrete example of OF superconductors. Properties of normal and Andreev reflections are examined in a normal metal/superconductor junction. Unlike conventional superconductors, normal reflection is always present due to the normal self energy that necessarily appears in the present OF pairing state. The conductance reflects the difference between repulsive and attractive potentials located at the interface, which is in contrast with the preexisting superconducting junctions. Josephson junction is also constructed by connecting TCKL with the other types of superconductors. The results can be understood from symmetry of the induced Cooper pairs at the edge in the presence of spin/orbital symmetry breaking. It has also been demonstrated that the symmetry argument for Cooper pairs is useful in explaining Meissner response in bulk.

  2. Quantum Phase Transition and Protected Ideal Transport in a Kondo Chain.

    PubMed

    Tsvelik, A M; Yevtushenko, O M

    2015-11-20

    We study the low energy physics of a Kondo chain where electrons from a one-dimensional band interact with magnetic moments via an anisotropic exchange interaction. It is demonstrated that the anisotropy gives rise to two different phases which are separated by a quantum phase transition. In the phase with easy plane anisotropy, Z_{2} symmetry between sectors with different helicity of the electrons is broken. As a result, localization effects are suppressed and the dc transport acquires (partial) symmetry protection. This effect is similar to the protection of the edge transport in time-reversal invariant topological insulators. The phase with easy axis anisotropy corresponds to the Tomonaga-Luttinger liquid with a pronounced spin-charge separation. The slow charge density wave modes have no protection against localization.

  3. Universal low-temperature crossover in two-channel Kondo models

    NASA Astrophysics Data System (ADS)

    Mitchell, Andrew K.; Sela, Eran

    2012-06-01

    An exact expression is derived for the electron Green function in two-channel Kondo models with one and two impurities, describing the crossover from non-Fermi liquid (NFL) behavior at intermediate temperatures to standard Fermi liquid (FL) physics at low temperatures. Symmetry-breaking perturbations generically present in experiment ensure the standard low-energy FL description, but the full crossover is wholly characteristic of the unstable NFL state. Distinctive conductance lineshapes in quantum dot devices should result. We exploit a connection between this crossover and one occurring in a classical boundary Ising model to calculate real-space electron densities at finite temperature. The single universal finite-temperature Green function is then extracted by inverting the integral transformation relating these Friedel oscillations to the t matrix. Excellent agreement is demonstrated between exact results and full numerical renormalization group calculations.

  4. Low energy properties of the Kondo chain in the RKKY regime

    DOE PAGES

    D. H. Schimmel; Tsvelik, A. M.; Yevtushenko, O. M.

    2016-05-03

    We study the Kondo chain in the regime of high spin concentration where the low energy physics is dominated by the Ruderman–Kittel–Kasuya–Yosida interaction. As has been recently shown (Tsvelik and Yevtushenko 2015 Phys. Rev. Lett. 115 216402), this model has two phases with drastically different transport properties depending on the anisotropy of the exchange interaction. In particular, the helical symmetry of the fermions is spontaneously broken when the anisotropy is of the easy plane type. This leads to a parametrical suppression of the localization effects. In the present paper we substantially extend the previous theory, in particular, by analyzing amore » competition of forward- and backward- scattering, including into the theory short range electron interactions and calculating spin correlation functions. In conclusion, we discuss applicability of our theory and possible experiments which could support the theoretical findings.« less

  5. Kondo effect in the helical edge liquid of the quantum spin Hall state.

    PubMed

    Maciejko, Joseph; Liu, Chaoxing; Oreg, Yuval; Qi, Xiao-Liang; Wu, Congjun; Zhang, Shou-Cheng

    2009-06-26

    Following the recent observation of the quantum spin Hall (QSH) effect in HgTe quantum wells, an important issue is to understand the effect of impurities on transport in the QSH regime. Using linear response and renormalization group methods, we calculate the edge conductance of a QSH insulator as a function of temperature in the presence of a magnetic impurity. At high temperatures, Kondo and/or two-particle scattering give rise to a logarithmic temperature dependence. At low temperatures, for weak Coulomb interactions in the edge liquid, the conductance is restored to unitarity with unusual power laws characteristic of a "local helical liquid," while for strong interactions, transport proceeds by weak tunneling through the impurity where only half an electron charge is transferred in each tunneling event. PMID:19659109

  6. Quantum phase transition and protected ideal transport in a Kondo chain

    SciTech Connect

    Tsvelik, A. M.; Yevtushenko, O. M.

    2015-11-30

    We study the low energy physics of a Kondo chain where electrons from a one-dimensional band interact with magnetic moments via an anisotropic exchange interaction. It is demonstrated that the anisotropy gives rise to two different phases which are separated by a quantum phase transition. In the phase with easy plane anisotropy, Z2 symmetry between sectors with different helicity of the electrons is broken. As a result, localization effects are suppressed and the dc transport acquires (partial) symmetry protection. This effect is similar to the protection of the edge transport in time-reversal invariant topological insulators. The phase with easy axis anisotropy corresponds to the Tomonaga-Luttinger liquid with a pronounced spin-charge separation. The slow charge density wave modes have no protection against localizatioin.

  7. Constructive influence of the induced electron pairing on the Kondo state

    PubMed Central

    Domański, T.; Weymann, I.; Barańska, M.; Górski, G.

    2016-01-01

    Superconducting order and magnetic impurities are usually detrimental to each other. We show, however, that in nanoscopic objects the induced electron pairing can have constructive influence on the Kondo effect originating from the effective screening interactions. Such situation is possible at low temperatures in the quantum dots placed between the conducting and superconducting reservoirs, where the proximity induced electron pairing cooperates with the correlations amplifying the spin-exchange potential. The emerging Abrikosov-Suhl resonance, which is observable in the Andreev conductance, can be significantly enhanced by increasing the coupling to superconducting lead. We explain this intriguing tendency within the Anderson impurity model using: the generalized Schrieffer-Wolff canonical transformation, the second order perturbative treatment of the Coulomb repulsion, and the nonperturbative numerical renormalization group calculations. We also provide hints for experimental observability of this phenomenon. PMID:27009681

  8. Low energy properties of the Kondo chain in the RKKY regime

    NASA Astrophysics Data System (ADS)

    Schimmel, D. H.; Tsvelik, A. M.; Yevtushenko, O. M.

    2016-05-01

    We study the Kondo chain in the regime of high spin concentration where the low energy physics is dominated by the Ruderman-Kittel-Kasuya-Yosida interaction. As has been recently shown (Tsvelik and Yevtushenko 2015 Phys. Rev. Lett. 115 216402), this model has two phases with drastically different transport properties depending on the anisotropy of the exchange interaction. In particular, the helical symmetry of the fermions is spontaneously broken when the anisotropy is of the easy plane type. This leads to a parametrical suppression of the localization effects. In the present paper we substantially extend the previous theory, in particular, by analyzing a competition of forward- and backward- scattering, including into the theory short range electron interactions and calculating spin correlation functions. We discuss applicability of our theory and possible experiments which could support the theoretical findings.

  9. Two-dimensional Fermi surfaces in Kondo insulator SmB₆.

    PubMed

    Li, G; Xiang, Z; Yu, F; Asaba, T; Lawson, B; Cai, P; Tinsman, C; Berkley, A; Wolgast, S; Eo, Y S; Kim, Dae-Jeong; Kurdak, C; Allen, J W; Sun, K; Chen, X H; Wang, Y Y; Fisk, Z; Li, Lu

    2014-12-01

    In the Kondo insulator samarium hexaboride (SmB6), strong correlation and band hybridization lead to an insulating gap and a diverging resistance at low temperature. The resistance divergence ends at about 3 kelvin, a behavior that may arise from surface conductance. We used torque magnetometry to resolve the Fermi surface topology in this material. The observed oscillation patterns reveal two Fermi surfaces on the (100) surface plane and one Fermi surface on the (101) surface plane. The measured Fermi surface cross sections scale as the inverse cosine function of the magnetic field tilt angles, which demonstrates the two-dimensional nature of the conducting electronic states of SmB6. PMID:25477456

  10. Quantum phase transition and protected ideal transport in a Kondo chain

    DOE PAGES

    Tsvelik, A. M.; Yevtushenko, O. M.

    2015-11-30

    We study the low energy physics of a Kondo chain where electrons from a one-dimensional band interact with magnetic moments via an anisotropic exchange interaction. It is demonstrated that the anisotropy gives rise to two different phases which are separated by a quantum phase transition. In the phase with easy plane anisotropy, Z2 symmetry between sectors with different helicity of the electrons is broken. As a result, localization effects are suppressed and the dc transport acquires (partial) symmetry protection. This effect is similar to the protection of the edge transport in time-reversal invariant topological insulators. The phase with easy axismore » anisotropy corresponds to the Tomonaga-Luttinger liquid with a pronounced spin-charge separation. The slow charge density wave modes have no protection against localizatioin.« less

  11. Kondo effect and thermoelectric transport in CePd3Be x.

    PubMed

    Gumeniuk, Roman; Schnelle, Walter; Kvashnina, Kristina O; Leithe-Jasper, Andreas

    2016-04-27

    The physical properties of the series CePd3Be(x) (0 ≤ x ≤ 0.47) have been studied. Introducing Be into CePd3 results in a drastic reduction of the Seebeck coefficient from 100 μV K(-1) at 300 K to  -2 μV K(-1), respectively. Paramagnetism of Ce(3+) free ions and metallic conduction dominate the physical properties. A structural transition at x  =  0.25 is accompanied by a significant lowering of the Kondo temperature and leads to a successive suppression of the thermoelectric performance of CePd3Be(x) with increasing x. PMID:27009024

  12. Interaction Driven Subgap Spin Exciton in the Kondo Insulator SmB6

    SciTech Connect

    Fuhrman, W. T.; Leiner, Jonathan C.; Nikolić, P.; Granroth, Garrett E.; Stone, Matthew B.; Lumsden, Mark D.; DeBeer-Schmitt, Lisa M.; Alekseev, Pavel A.; Mignot, Jean-Michel; Koohpayeh, S. M.; Cottingham, P.; Phelan, William Adam; Schoop, L.; McQueen, T. M.; Broholm, C.

    2015-01-21

    In this paper, using inelastic neutron scattering, we map a 14 meV coherent resonant mode in the topological Kondo insulator SmB6 and describe its relation to the low energy insulating band structure. The resonant intensity is confined to the X and R high symmetry points, repeating outside the first Brillouin zone and dispersing less than 2 meV, with a 5d-like magnetic form factor. We present a slave-boson treatment of the Anderson Hamiltonian with a third neighbor dominated hybridized band structure. This approach produces a spin exciton below the charge gap with features that are consistent with the observed neutron scattering. Finally, we find that maxima in the wave vector dependence of the inelastic neutron scattering indicate band inversion.

  13. Spin-orbital and spin Kondo effects in parallel coupled quantum dots

    NASA Astrophysics Data System (ADS)

    Krychowski, D.; Lipiński, S.

    2016-02-01

    Strong electron correlations and interference effects are discussed in parallel-coupled single-level or orbitally doubly degenerate quantum dots. The finite-U mean-field slave boson approach is used to study many-body effects. The analysis is carried out in a wide range of parameter space including both atomic-like and molecular-like Kondo regimes and taking into account various perturbations, like interdot tunneling, interdot interaction, mixing of the electrode channels, and exchange interaction. We also discuss the influence of singularities of electronic structure and the impact of polarization of electrodes. Special attention is paid to potential spintronic applications of these systems showing how current polarization can be controlled by adjusting interference conditions and correlations by gate voltage. Simple proposals of double dot spin valve and bipolar electrically tunable spin filter are presented.

  14. Interaction Driven Subgap Spin Exciton in the Kondo Insulator SmB6

    DOE PAGES

    Fuhrman, W. T.; Leiner, Jonathan C.; Nikolić, P.; Granroth, Garrett E.; Stone, Matthew B.; Lumsden, Mark D.; DeBeer-Schmitt, Lisa M.; Alekseev, Pavel A.; Mignot, Jean-Michel; Koohpayeh, S. M.; et al

    2015-01-21

    In this paper, using inelastic neutron scattering, we map a 14 meV coherent resonant mode in the topological Kondo insulator SmB6 and describe its relation to the low energy insulating band structure. The resonant intensity is confined to the X and R high symmetry points, repeating outside the first Brillouin zone and dispersing less than 2 meV, with a 5d-like magnetic form factor. We present a slave-boson treatment of the Anderson Hamiltonian with a third neighbor dominated hybridized band structure. This approach produces a spin exciton below the charge gap with features that are consistent with the observed neutron scattering.more » Finally, we find that maxima in the wave vector dependence of the inelastic neutron scattering indicate band inversion.« less

  15. Proximity effect induced by Kondo interaction in a network composed of YBCO and spin density wave

    NASA Astrophysics Data System (ADS)

    Maity, S.; Ghosh, Ajay Kumar

    2015-10-01

    The possibility of the proximity effect mediated by Kondo interaction in YBCO embedded in system of diluted magnetic spin ordering has been studied. An YBCO sample is selected in which both metal to insulator transition and superconducting state exist in the different ranges of temperature. The intergranular network of the bulk Y-123 has been modified by the inclusion of YMnO3 which has a well defined magnetic structure depending on temperature. The current-voltage measurements have been carried out in pure Y-123 at several temperatures. At the same set of temperatures the current-voltage curves in presence of YMnO3 have been studied. The role of the diluted spin magnetic ordering in tuning proximity effect and conduction property in binary systems is associated with reduced coherence length in the normal region.

  16. Non-universal weak antilocalization effect in cubic topological Kondo insulators

    NASA Astrophysics Data System (ADS)

    Dzero, Maxim; Vavilov, Maxim; Kechedzhi, Kostyantin; Galitski, Victor

    In this talk we present the results of our study of the quantum correction to conductivity on the surface of cubic topological Kondo insulators with multiple Dirac bands. We considered the model of time-reversal invariant disorder which induces the scattering of the electrons within the Dirac bands as well as between the bands. When only intraband scattering is present we found three long-range diffusion modes leading to weak antilocalization correction to conductivity which remains independent of the microscopic details such as Fermi velocities and relaxation times. Interband scattering gaps out two diffusion modes leaving only one long-range mode. Depending on the value of the phase coherence time, either three or only one long-range diffusion modes contribute to weak localization correction rendering the quantum correction to conductivity non-universal.

  17. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  18. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  19. Synchronous semiconductor memory device

    SciTech Connect

    Onno, C.; Hirata, M.

    1989-11-21

    This patent describes a synchronous semiconductor memory device. It comprises: first latch means for latching a write command in synchronism with clock signal; second latch means for latching a write data in synchronism with the clock signal and for outputting two write process signals based on the write data latched thereby; pulse generating means for generating an internal write pulse signal based on the write command latched by the first latch means. The internal write pulse signal having a semiconductor memory device; write control means supplied with the internal write pulse signal and the write process signals for controlling write and read operations of the synchronous semiconductor memory device; memory means for storing the write data latched by the second latch means; and noise preventing means coupled to the second latch means and the write control means for supplying the write process signals to the write control means only in the write mode responsive to the internal write pulse signal and for setting the write process signals to fixed potentials during a time other than the write mode.

  20. Foundations of heavy-fermion superconductivity: lattice Kondo effect and Mott physics.

    PubMed

    Steglich, Frank; Wirth, Steffen

    2016-08-01

    This article overviews the development of heavy-fermion superconductivity, notably in such rare-earth-based intermetallic compounds which behave as Kondo-lattice systems. Heavy-fermion superconductivity is of unconventional nature in the sense that it is not mediated by electron-phonon coupling. Rather, in most cases the attractive interaction between charge carriers is apparently magnetic in origin. Fluctuations associated with an antiferromagnetic (AF) quantum critical point (QCP) play a major role. The first heavy-fermion superconductor CeCu2Si2 turned out to be the prototype of a larger group of materials for which the underlying, often pressure-induced, AF QCP is likely to be of a three-dimensional (3D) spin-density-wave (SDW) variety. For UBe13, the second heavy-fermion superconductor, a magnetic-field-induced 3D SDW QCP inside the superconducting phase can be conjectured. Such a 'conventional', itinerant QCP can be well understood within Landau's paradigm of order-parameter fluctuations. In contrast, the low-temperature normal-state properties of a few heavy-fermion superconductors are at odds with the Landau framework. They are characterized by an 'unconventional', local QCP which may be considered a zero-temperature 4 f-orbital selective Mott transition. Here, as concluded for YbRh2Si2, the breakdown of the Kondo effect concurring with the AF instability gives rise to an abrupt change of the Fermi surface. Very recently, superconductivity was discovered for this compound at ultra-low temperatures. Therefore, YbRh2Si2 along with CeRhIn5 under pressure provide a natural link between the large group of about fifty low-temperature heavy-fermion superconductors and other families of unconventional superconductors with substantially higher T c, e.g. the doped Mott insulators of the perovskite-type cuprates and the organic charge-transfer salts.

  1. Foundations of heavy-fermion superconductivity: lattice Kondo effect and Mott physics

    NASA Astrophysics Data System (ADS)

    Steglich, Frank; Wirth, Steffen

    2016-08-01

    This article overviews the development of heavy-fermion superconductivity, notably in such rare-earth-based intermetallic compounds which behave as Kondo-lattice systems. Heavy-fermion superconductivity is of unconventional nature in the sense that it is not mediated by electron-phonon coupling. Rather, in most cases the attractive interaction between charge carriers is apparently magnetic in origin. Fluctuations associated with an antiferromagnetic (AF) quantum critical point (QCP) play a major role. The first heavy-fermion superconductor CeCu2Si2 turned out to be the prototype of a larger group of materials for which the underlying, often pressure-induced, AF QCP is likely to be of a three-dimensional (3D) spin-density-wave (SDW) variety. For UBe13, the second heavy-fermion superconductor, a magnetic-field-induced 3D SDW QCP inside the superconducting phase can be conjectured. Such a ‘conventional’, itinerant QCP can be well understood within Landau’s paradigm of order-parameter fluctuations. In contrast, the low-temperature normal-state properties of a few heavy-fermion superconductors are at odds with the Landau framework. They are characterized by an ‘unconventional’, local QCP which may be considered a zero-temperature 4 f-orbital selective Mott transition. Here, as concluded for YbRh2Si2, the breakdown of the Kondo effect concurring with the AF instability gives rise to an abrupt change of the Fermi surface. Very recently, superconductivity was discovered for this compound at ultra-low temperatures. Therefore, YbRh2Si2 along with CeRhIn5 under pressure provide a natural link between the large group of about fifty low-temperature heavy-fermion superconductors and other families of unconventional superconductors with substantially higher T c, e.g. the doped Mott insulators of the perovskite-type cuprates and the organic charge-transfer salts.

  2. Fermionology in the Kondo-Heisenberg model: the case of CeCoIn5

    NASA Astrophysics Data System (ADS)

    Zhong, Yin; Zhang, Lan; Lu, Han-Tao; Luo, Hong-Gang

    2015-09-01

    The Fermi surface of heavy electron systems plays a fundamental role in understanding their variety of puzzling phenomena, for example, quantum criticality, strange metal behavior, unconventional superconductivity and even enigmatic phases with yet unknown order parameters. The spectroscopy measurement of the typical heavy fermion superconductor CeCoIn5 has demonstrated multi-Fermi surface structure, which has not been studied in detail theoretically in a model system like the Kondo-Heisenberg model. In this work, we take a step toward such a theoretical model by revisiting the Kondo-Heisenberg model. It is found that the usual self-consistent calculation cannot reproduce the fermionology of the experimental observation of the system due to the sign binding between the hopping of the conduction electrons and the mean-field valence-bond order. To overcome such inconsistency, the mean-field valence-bond order is considered as a free/fitting parameter to correlate them with real-life experiments as performed in recent experiments [M.P. Allan, F. Massee, D.K. Morr, J. Van Dyke, A.W. Rost, A.P. Mackenzie, C. Petrovic, J.C. Davis, Nat. Phys. 9, 468 (2013); J. Van Dyke, F. Massee, M.P. Allan, J.C. Davis, C. Petrovic, D.K. Morr, Proc. Natl. Acad. Sci. 111, 11663 (2014)], which also explicitly reflects the intrinsic dispersion of local electrons observed in experimental measurements. Given the fermionology, the calculated effective mass enhancement, entropy, superfluid density and Knight shift are all in qualitative agreement with the experimental results of CeCoIn5, which confirms our assumption. Our result supports a d_{x^2 - y^2 }-wave pairing structure in the heavy fermion material CeCoIn5.

  3. STEM in Kondo Lattices: a new window on correlated electron materials

    NASA Astrophysics Data System (ADS)

    Coleman, Piers

    2012-02-01

    The tremendous developments in scanning tunneling electron spectroscopy over the past decade, applied with tremendous success to the cuprate superconductors, are now beginning to be applied to other strongly correlated electron systems. One area where they offer tremendous potential, is in the context of heavy fermion materials. In the last few years, it has become possible to start probing the physics of the Kondo lattice using STEM methods. In this talk I will review this field, discussing the physics of tunneling into the Kondo lattice, showing how tunneling involves a co-operative process of electron transfer and spin-flip, called ``cotunnelling'' [1,2]. I will provide an overview of latest results in this field, especially URu2Si2 [3,4], YbRh2Si2 [5] and CeCoIn5 [6], discussing how STEM can be used to probe various new theoretical proposals [7,8] for the exotic order and critical behavior. [4pt] [1] M. Maltseva, M. Dzero, and P. Coleman, Phys. Rev. Lett. 103, 206402 (2009).[0pt] [2] J. Figgins and D. Morr, Phys. Rev. Lett. 104, 187202 (2010).[0pt] [3] A. R. Schmidt et al, Nature 465, 570-576 (2010).[0pt] [4] P. Aynajian et al., Proc. Natl. Acad. Sci. U.S.A. 107, 10383 (2010).[0pt] [5] S. Ernst et al, Nature (2011).[0pt] [6] S. Ernst et al, Physica Status Solidi 247, 624 (2010).[0pt] [7] Y. Dubi and A.V. Balatsky, Phys. Rev. Lett. 106, 196407 (2011).[0pt] [8] P. Chandra, P. Coleman and R. Flint, to be published (2012).

  4. Foundations of heavy-fermion superconductivity: lattice Kondo effect and Mott physics.

    PubMed

    Steglich, Frank; Wirth, Steffen

    2016-08-01

    This article overviews the development of heavy-fermion superconductivity, notably in such rare-earth-based intermetallic compounds which behave as Kondo-lattice systems. Heavy-fermion superconductivity is of unconventional nature in the sense that it is not mediated by electron-phonon coupling. Rather, in most cases the attractive interaction between charge carriers is apparently magnetic in origin. Fluctuations associated with an antiferromagnetic (AF) quantum critical point (QCP) play a major role. The first heavy-fermion superconductor CeCu2Si2 turned out to be the prototype of a larger group of materials for which the underlying, often pressure-induced, AF QCP is likely to be of a three-dimensional (3D) spin-density-wave (SDW) variety. For UBe13, the second heavy-fermion superconductor, a magnetic-field-induced 3D SDW QCP inside the superconducting phase can be conjectured. Such a 'conventional', itinerant QCP can be well understood within Landau's paradigm of order-parameter fluctuations. In contrast, the low-temperature normal-state properties of a few heavy-fermion superconductors are at odds with the Landau framework. They are characterized by an 'unconventional', local QCP which may be considered a zero-temperature 4 f-orbital selective Mott transition. Here, as concluded for YbRh2Si2, the breakdown of the Kondo effect concurring with the AF instability gives rise to an abrupt change of the Fermi surface. Very recently, superconductivity was discovered for this compound at ultra-low temperatures. Therefore, YbRh2Si2 along with CeRhIn5 under pressure provide a natural link between the large group of about fifty low-temperature heavy-fermion superconductors and other families of unconventional superconductors with substantially higher T c, e.g. the doped Mott insulators of the perovskite-type cuprates and the organic charge-transfer salts. PMID:27376190

  5. Lattice disorder and size-induced Kondo behavior in CeAl2 andCePt2+x

    SciTech Connect

    Han, S.-W.; Booth, C.H.; Bauer, E.D.; Huang P.H.; Chen, Y.Y.; Lawrence, J.M.

    2006-03-14

    When the particle size of CeAl{sub 2} and CePt{sub 2+x} samples is reduced to the nanometer scale, antiferromagnetism is suppressed and Kondo behavior dominates. We find that the Kondo temperature T{sub K} can either decrease (CeAl{sub 2}) or increase (CePt{sub 2+x}) in the nanoparticles relative to the bulk. Extended x-ray absorption fine-structure data show that the Ce-Al and Ce-Pt environments are significantly distorted in the nanoparticles. While such distortions should strongly affect magnetic and electronic properties, we find they cannot explain the observed changes in T{sub K}. Changes in the conduction density of states or other parameters must, therefore, play a significant role.

  6. Consistent bosonization-debosonization. II. The two-lead Kondo problem and the fate of its nonequilibrium Toulouse point

    NASA Astrophysics Data System (ADS)

    Bolech, C. J.; Shah, Nayana

    2016-02-01

    Following the development of a scheme to bosonize and debosonize consistently [N. Shah and C. J. Bolech, Phys. Rev. B 93, 085440 (2016), 10.1103/PhysRevB.93.085440], we present in detail the Toulouse-point analytic solution of the two-lead Kondo junction model. The existence and location of the solvable point is not modified, but the calculational methodology and the final expressions for observable quantities change markedly as compared to the existent results. This solvable point is one of the remarkably few exact results for nonequilibrium transport in correlated systems. It yields relatively simple analytical expressions for the current in the full range of temperature, magnetic field, and voltage. It also shows precisely, within the limitations of the Toulouse fine-tuning, how the transport evolves depending on the relative strengths of interlead and intralead Kondo exchange couplings ranging from weak to strong. Thus its improved understanding is an important stepping stone for future research.

  7. Observation of orbital two-channel Kondo effect in a ferromagnetic L10-MnGa film

    NASA Astrophysics Data System (ADS)

    Zhu, Lijun; Woltersdorf, Georg; Zhao, Jianhua

    2016-09-01

    The experimental existence and stability of the fixed point of the two-channel Kondo (2CK) effect displaying exotic non-Fermi liquid physics have been buried in persistent confusion despite the intensive theoretical and experimental efforts in past three decades. Here we report an experimental realization of the two-level system resonant scattering-induced orbital 2CK effect in a ferromagnetic L10-MnGa film, which is signified by a magnetic field-independent resistivity upturn that has a logarithmic and a square-root temperature dependence beyond and below the Kondo temperature of ~14.5 K, respectively. Our results not only evidence the robust existence of orbital 2CK effect even in the presence of strong magnetic fields and long-range ferromagnetic ordering, but also extend the scope of 2CK host materials from nonmagnetic nanoscale point contacts to diffusive conductors of disordered alloys.

  8. Observation of orbital two-channel Kondo effect in a ferromagnetic L10-MnGa film

    PubMed Central

    Zhu, Lijun; Woltersdorf, Georg; Zhao, Jianhua

    2016-01-01

    The experimental existence and stability of the fixed point of the two-channel Kondo (2CK) effect displaying exotic non-Fermi liquid physics have been buried in persistent confusion despite the intensive theoretical and experimental efforts in past three decades. Here we report an experimental realization of the two-level system resonant scattering-induced orbital 2CK effect in a ferromagnetic L10-MnGa film, which is signified by a magnetic field-independent resistivity upturn that has a logarithmic and a square-root temperature dependence beyond and below the Kondo temperature of ~14.5 K, respectively. Our results not only evidence the robust existence of orbital 2CK effect even in the presence of strong magnetic fields and long-range ferromagnetic ordering, but also extend the scope of 2CK host materials from nonmagnetic nanoscale point contacts to diffusive conductors of disordered alloys. PMID:27686323

  9. Kondo Resonance in a Mesoscopic Ring Coupled to a Quantum Dot: Exact Results for the Aharonov-Bohm-Casher Effects

    SciTech Connect

    Eckle, H.-P.; Johannesson, H.; Stafford, C. A.

    2001-07-02

    We study the persistent currents induced by both the Aharonov-Bohm and Aharonov-Casher effects in a one-dimensional mesoscopic ring coupled to a sidebranch quantum dot at Kondo resonance. For privileged values of the Aharonov-Bohm-Casher fluxes, the problem can be mapped onto an integrable model, exactly solvable by a Bethe ansatz. In the case of a pure magnetic Aharonov-Bohm flux, we find that the presence of the quantum dot has no effect on the persistent current. In contrast, the Kondo resonance interferes with the spin-dependent Aharonov-Casher effect to induce a current which, in the strong-coupling limit, is independent of the number of electrons in the ring.

  10. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  11. Integrated devices including cleaved semiconductor lasers

    SciTech Connect

    Chen, C.Y.

    1987-11-17

    A process for fabricating a semiconductor device is described comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.

  12. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  13. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  14. The spin glass-antiferromagnetism competition in Kondo-lattice systems in the presence of a transverse applied magnetic field

    NASA Astrophysics Data System (ADS)

    Magalhaes, S. G.; Zimmer, F. M.; Coqblin, B.

    2006-05-01

    A theory is proposed to describe the competition among antiferromagnetism (AF), spin glass (SG) and Kondo effect. The model describes two Kondo sublattices with an intrasite Kondo interaction strength JK and a random Gaussian interlattice interaction in the presence of a transverse field Γ. The Γ field is introduced as a quantum mechanism to produce spin flipping and the random coupling has average -2J0/N and variance 32J2/N. The path integral formalism with Grassmann fields is used to study this fermionic problem, in which the disorder is treated within the framework of the replica trick. The free energy and the order parameters are obtained using the static ansatz. In this many parameters problem, we choose J0/J≈(JK/J)2 and Γ/J≈(JK/J)2 to allow a better comparison with the experimental findings. The obtained phase diagram has not only the same sequence as the experimental one for Ce2Au1-xCoxSi3, but mainly, it also shows a qualitative agreement concerning the behavior of the freezing temperature and the Neel temperature which decreases until a quantum critical point (QCP).

  15. Transport properties and Kondo correlations in nanostructures: Time-dependent DMRG method applied to quantum dots coupled to Wilson chains

    SciTech Connect

    Dias Da Silva, Luis G; Heidrich-Meisner, Fabian; Feiguin, Adrian E; Busser, C. A.; Martins, G. B.; Anda, E. V.; Dagotto, Elbio R

    2008-01-01

    We apply the adaptive time-dependent density-matrix renormalization-group method tDMRG to the study of transport properties of quantum-dot systems connected to metallic leads. Finite-size effects make the usual tDMRG description of the Kondo regime a numerically demanding task. We show that such effects can be attenuated by describing the leads by Wilson chains, in which the hopping matrix elements decay exponentially away from the impurity tn n/2. For a given system size and in the linear-response regime, results for 1 show several improvements over the undamped =1 case: perfect conductance is obtained deeper in the strongly interacting regime and current plateaus remain well defined for longer time scales. Similar improvements were obtained in the finite-bias regime up to bias voltages of the order of the Kondo temperature. These results show that with the proposed modification, the tDMRG characterization of Kondo correlations in the transport properties can be substantially improved, while it turns out to be sufficient to work with much smaller system sizes. We discuss the numerical cost of this approach with respect to the necessary system sizes and the entanglement growth during the time evolution.

  16. Non-Kondo-like electronic structure in the correlated rare-earth hexaboride YbB6

    DOE PAGES

    Neupane, Madhab; Xu, Su -Yang; Alidoust, Nasser; Bian, Guang; Kim, D. J.; Liu, Chang; Belopolski, I.; Chang, T. -R.; Jeng, H. -T.; Durakiewicz, T.; et al

    2015-01-07

    Here, we present angle-resolved photoemission studies on the rare-earth-hexaboride YbB6, which has recently been predicted to be a topological Kondo insulator. Our data do not agree with the prediction and instead show that YbB6 exhibits a novel topological insulator state in the absence of a Kondo mechanism. We find that the Fermi level electronic structure of YbB6 has three 2D Dirac cone like surface states enclosing the Kramers’s points, while the f orbital that would be relevant for the Kondo mechanism is ~1 eV below the Fermi level. Our first-principles calculation shows that the topological state that we observe inmore » YbB6 is due to an inversion between Yb d and B p bands. These experimental and theoretical results provide a new approach for realizing novel correlated topological insulator states in rare-earth materials.« less

  17. Revealing the Atomic Site-Dependent g Factor within a Single Magnetic Molecule via the Extended Kondo Effect

    NASA Astrophysics Data System (ADS)

    Du, Shixuan

    Control over charge and spin states at the single molecule level is crucial not only for a fundamental understanding of charge and spin interactions but also represents a prerequisite for development of molecular electronics and spintronics. In this talk, I will talk about the extended spin distribution in space beyond the central Mn ion, and onto the non-magnetic constituent atoms of the MnPc molecule. This extended spin distribution results in an extended Kondo effect, which can be explained by spin polarization induced by symmetry breaking of the molecular framework, as confirmed by DFT calculations. Measuring the evolution of the Kondo splitting with applied magnetic fields at different atomic sites, we find a spatial variation of the g-factor within a single molecule for the first time. The existence of atomic site-dependent g-factors can be attributed to specific molecular orbitals distributed over the entire molecule. This work not only open up a new opportunity for quantum information recording, but also provide a new route to explore the internal electronic and spin structure of complex molecules, hard to achieve otherwise. (L. W. Liu et al., Phys. Rev. Lett. 2015, 114, 126601. In collaboration with Liwei Liu, Kai Yang, Yuhang Jiang, Li Gao, Qi Liu, Boqun Song, Wende Xiao, Haitao Zhou, Hongjun Gao in CAS, Min Ouyang in MU, and A.H. Castro Neto in SNU.) Revealing the Atomic Site-Dependent g Factor within a Single Magnetic Molecule via the Extended Kondo Effect.

  18. ARPES view on surface and bulk hybridization phenomena in the antiferromagnetic Kondo lattice CeRh2Si2.

    PubMed

    Patil, S; Generalov, A; Güttler, M; Kushwaha, P; Chikina, A; Kummer, K; Rödel, T C; Santander-Syro, A F; Caroca-Canales, N; Geibel, C; Danzenbächer, S; Kucherenko, Yu; Laubschat, C; Allen, J W; Vyalikh, D V

    2016-01-01

    The hybridization between localized 4f electrons and itinerant electrons in rare-earth-based materials gives rise to their exotic properties like valence fluctuations, Kondo behaviour, heavy-fermions, or unconventional superconductivity. Here we present an angle-resolved photoemission spectroscopy (ARPES) study of the Kondo lattice antiferromagnet CeRh2Si2, where the surface and bulk Ce-4f spectral responses were clearly resolved. The pronounced 4f (0) peak seen for the Ce terminated surface gets strongly suppressed in the bulk Ce-4f spectra taken from a Si-terminated crystal due to much larger f-d hybridization. Most interestingly, the bulk Ce-4f spectra reveal a fine structure near the Fermi edge reflecting the crystal electric field splitting of the bulk magnetic 4f (1)5/2 state. This structure presents a clear dispersion upon crossing valence states, providing direct evidence of f-d hybridization. Our findings give precise insight into f-d hybridization penomena and highlight their importance in the antiferromagnetic phases of Kondo lattices. PMID:26987899

  19. ARPES view on surface and bulk hybridization phenomena in the antiferromagnetic Kondo lattice CeRh2Si2

    PubMed Central

    Patil, S.; Generalov, A.; Güttler, M.; Kushwaha, P.; Chikina, A.; Kummer, K.; Rödel, T. C.; Santander-Syro, A. F.; Caroca-Canales, N.; Geibel, C.; Danzenbächer, S.; Kucherenko, Yu.; Laubschat, C.; Allen, J. W.; Vyalikh, D. V.

    2016-01-01

    The hybridization between localized 4f electrons and itinerant electrons in rare-earth-based materials gives rise to their exotic properties like valence fluctuations, Kondo behaviour, heavy-fermions, or unconventional superconductivity. Here we present an angle-resolved photoemission spectroscopy (ARPES) study of the Kondo lattice antiferromagnet CeRh2Si2, where the surface and bulk Ce-4f spectral responses were clearly resolved. The pronounced 4f 0 peak seen for the Ce terminated surface gets strongly suppressed in the bulk Ce-4f spectra taken from a Si-terminated crystal due to much larger f-d hybridization. Most interestingly, the bulk Ce-4f spectra reveal a fine structure near the Fermi edge reflecting the crystal electric field splitting of the bulk magnetic 4f 15/2 state. This structure presents a clear dispersion upon crossing valence states, providing direct evidence of f-d hybridization. Our findings give precise insight into f-d hybridization penomena and highlight their importance in the antiferromagnetic phases of Kondo lattices. PMID:26987899

  20. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  1. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  2. Deep levels in semiconductors

    NASA Astrophysics Data System (ADS)

    Watkins, George D.

    1983-03-01

    The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction with the lattice vacancy, into which the impurity is placed. This interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy.

  3. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  4. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2001-12-21

    Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

  5. Semiconductor nanorod liquid crystals

    SciTech Connect

    Li, Liang-shi; Walda, Joost; Manna, Liberato; Alivisatos, A. Paul

    2002-01-28

    Rodlike molecules form liquid crystalline phases with orientational order and positional disorder. The great majority of materials in which liquid crystalline phases have been observed are comprised of organic molecules or polymers, even though there has been continuing and growing interest in inorganic liquid crystals. Recent advances in the control of the sizes and shapes of inorganic nanocrystals allow for the formation of a broad class of new inorganic liquid crystals. Here we show the formation of liquid crystalline phases of CdSe semiconductor nanorods. These new liquid crystalline phases may have great importance for both application and fundamental study.

  6. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  7. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  8. Aqueous Based Semiconductor Nanocrystals.

    PubMed

    Jing, Lihong; Kershaw, Stephen V; Li, Yilin; Huang, Xiaodan; Li, Yingying; Rogach, Andrey L; Gao, Mingyuan

    2016-09-28

    This review summarizes traditional and recent nonconventional, bioinspired, methods for the aqueous synthesis of colloidal semiconductor quantum dots (QDs). The basic chemistry concepts are critically emphasized at the very beginning as these are strongly correlated with the selection of ligands and the optimal formation of aqueous QDs and their more sophisticated structures. The synergies of biomimetic and biosynthetic methods that can combine biospecific reactivity with the robust and strong optical responses of QDs have also resulted in new approaches to the synthesis of the nanoparticles themselves. A related new avenue is the recent extension of QD synthesis to form nanoparticles endowed with chiral optical properties. The optical characteristics of QD materials and their advanced forms such as core/shell heterostructures, alloys, and doped QDs are discussed: from the design considerations of optical band gap tuning, the control and reduction of the impact of surface traps, the consideration of charge carrier processes that affect emission and energy and charge transfer, to the impact and influence of lattice strain. We also describe the considerable progress in some selected QD applications such as in bioimaging and theranostics. The review concludes with future strategies and identification of key challenges that still need to be resolved in reaching very attractive, scalable, yet versatile aqueous syntheses that may widen the scope of commercial applications for semiconductor nanocrystals. PMID:27586892

  9. Isotopically engineered semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1995-04-01

    Scientific interest, technological promise, and increased availability of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This review of mostly recent activities begins with an introduction to some past classical experiments which have been performed on isotopically controlled semiconductors. A review of the natural isotopic composition of the relevant elements follows. Some materials aspects resulting in part from the high costs of enriched isotopes are discussed next. Raman spectroscopy studies with a number of isotopically pure and deliberately mixed Ge bulk crystals show that the Brillouin-zone-center optical phonons are not localized. Their lifetime is almost independent of isotopic disorder, leading to homogeneous Raman line broadening. Studies with short period isotope superlattices consisting of alternating layers of n atomic planes of 70Ge and 74Ge reveal a host of zone-center phonons due to Brillouin-zone folding. At n≳40 one observes two phonon lines at frequencies corresponding to the bulk values of the two isotopes. In natural diamond, isotope scattering of the low-energy phonons, which are responsible for the thermal conductivity, is very strongly affected by small isotope disorder. Isotopically pure 12C diamond crystals exhibit thermal conductivities as high as 410 W cm-1 K-1 at 104 K, leading to projected values of over 2000 W cm-1 K-1 near 80 K. The changes in phonon properties with isotopic composition also weakly affect the electronic band structures and the lattice constants. The latter isotope dependence is most relevant for future standards of length based on crystal lattice constants. Capture of thermal neutrons by isotope nuclei followed by nuclear decay produces new elements, resulting in a very large number of possibilities for isotope selective doping of semiconductors. This neutron transmutation of isotope nuclei, already used

  10. Kondo effect at low electron density and high particle-hole asymmetry in 1D, 2D, and 3D

    NASA Astrophysics Data System (ADS)

    Žitko, Rok; Horvat, Alen

    2016-09-01

    Using the perturbative scaling equations and the numerical renormalization group, we study the characteristic energy scales in the Kondo impurity problem as a function of the exchange coupling constant J and the conduction-band electron density. We discuss the relation between the energy gain (impurity binding energy) Δ E and the Kondo temperature TK. We find that the two are proportional only for large values of J , whereas in the weak-coupling limit the energy gain is quadratic in J , while the Kondo temperature is exponentially small. The exact relation between the two quantities depends on the detailed form of the density of states of the band. In the limit of low electron density the Kondo screening is affected by the strong particle-hole asymmetry due to the presence of the band-edge van Hove singularities. We consider the cases of one- (1D), two- (2D), and three-dimensional (3D) tight-binding lattices (linear chain, square lattice, cubic lattice) with inverse-square-root, step-function, and square-root onsets of the density of states that are characteristic of the respective dimensionalities. We always find two different regimes depending on whether TK is higher or lower than μ , the chemical potential measured from the bottom of the band. For 2D and 3D, we find a sigmoidal crossover between the large-J and small-J asymptotics in Δ E and a clear separation between Δ E and TK for TK<μ . For 1D, there is, in addition, a sizable intermediate-J regime where the Kondo temperature is quadratic in J due to the diverging density of states at the band edge. Furthermore, we find that in 1D the particle-hole asymmetry leads to a large decrease of TK compared to the standard result obtained by approximating the density of states to be constant (flat-band approximation), while in 3D the opposite is the case; this is due to the nontrivial interplay of the exchange and potential scattering renormalization in the presence of particle-hole asymmetry. The 2D square

  11. Progress in semiconductor drift detectors

    SciTech Connect

    Rehak, P.; Walton, J.; Gatti, E.; Longoni, A.; Sanpietro, M.; Kemmer, J.; Dietl, H.; Holl, P.; Klanner, R.; Lutz, G.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements.

  12. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  13. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  14. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  15. Stripline mount for semiconductor lasers

    SciTech Connect

    Dietrich, N.R.; Holbrook, W.R.; Johnson, A.F. Jr.; Zacharias, A.

    1988-08-02

    An arrangement for coupling a semiconductor optical device to a signal source, is described, the arrangement comprising a stripline transmission path having a predetermined characteristic impedance Z/sub 0/; and resistance means connected in series with the stripline transmission path, chosen to provide impedance matching between the stripline transmission path and an associated semiconductor optical device.

  16. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  17. Kondo Physics at Interfaces in Metallic Non-Local Spin Transport Devices

    NASA Astrophysics Data System (ADS)

    Leighton, Chris

    2015-03-01

    Despite the maturity of metallic spintronics there remain large gaps in our understanding of spin transport in metals, particularly with injection of spins across ferromagnetic/non-magnetic (FM/NM) interfaces, and their subsequent diffusion and relaxation. Unresolved issues include the limits of applicability of Elliott-Yafet spin relaxation, quantification of the influence of defects, surfaces, and interfaces on spin relaxation at nanoscopic dimensions, and the importance of magnetic and spin-orbit scattering. The non-local spin-valve is an enabling device in this context as, in addition to offering potentially disruptive applications, it allows for the separation of charge and spin currents. One particularly perplexing issue in metallic non-local spin valves is the widely observed non-monotonicity in the T-dependent spin accumulation, where the spin signal actually decreases at low T, in contrast to simple expectations. In this work, by studying an expanded range of FM/NM combinations (encompassing Ni80Fe20, Ni, Fe, Co, Cu, and Al), we demonstrate that this effect is not a property of a given FM or NM, but rather of the FM/NM pair. The non-monotonicity is in fact strongly correlated with the ability of the FM to form a dilute local magnetic moment in the NM. We show that local moments, resulting in this case from the ppm-level tail of the FM/NM interdiffusion profile, suppress the injected spin polarization and diffusion length via a novel manifestation of the Kondo effect, explaining all observations associated with the low T downturn in spin accumulation. We further show: (a) that this effect can be promoted by thermal annealing, at which point the conventional charge transport Kondo effect is simultaneously detected in the NM, and (b) that this suppression in spin accumulation can be quenched, even at interfaces that are highly susceptible to the effect, by insertion of a thin non-moment-supporting interlayer. Important implications for room temperature

  18. Diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Anderson, James R.

    1990-03-01

    Growth and physical properties of diluted magnetic semiconductors (DMS) were investigated. Growth included Bridgman, solid state recrystallization, and liquid phase epitaxy of Mercury(1-x)Manganese(x)Telluride and Mercury(1-x-y)Manganese(x)Cadmium(y)Telluride. Very uniform crystals were produced by solid state recrystallization. Physical properties studied included magnetization, optical response, and magnetotransport. From magnetization, the exchange interactions among magnetic ions have been deduced. Modulated spectroscopy gave details of the electronic structure of DMS and the quality of the material was indicated by the line widths. Magnetotransport, carried out in some cases to 30 T, showed a large negative magnetoresistance and subsequent increase. The Hg(1-x-y)Mn(x)Cd(y)Te has considerable promise for avalanche photodiodes between 1.2 and 1.8 micrometers.

  19. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  20. Kondo interactions from band reconstruction in YbInCu4

    SciTech Connect

    Jarrige, I.; Kotani, A.; Yamaoka, H.; Tsujii, N.; Ishii, K.; Upton, M.; Casa, D.; Kim, J.; Gog, T.; Hancock, J. N.

    2015-03-27

    We combine resonant inelastic X-ray scattering (RIXS) and model calculations in the Kondo lattice compound YbInCu₄, a system characterized by a dramatic increase in Kondo temperature and associated valence fluctuations below a first-order valence transition at T≃42 K. In this study, the bulk-sensitive, element-specific, and valence-projected charge excitation spectra reveal an unusual quasi-gap in the Yb-derived state density which drives an instability of the electronic structure and renormalizes the low-energy effective Hamiltonian at the transition. Our results provide long-sought experimental evidence for a link between temperature-driven changes in the low-energy Kondo scale and the higher-energy electronic structure of this system.

  1. Substitutional effects on the electronic transport of the Kondo insulator Ce{sub 3}Bi{sub 4}Pt{sub 3}

    SciTech Connect

    Hundley, M.F.; Canfield, P.C.; Thompson, J.D.; Fisk, Z.

    1994-04-01

    The resistivity {rho} and thermoelectric power S of the doped Kondo insulator (Ce{sub 1-x}La{sub x}){sub 3}Bi{sub 4}Pt{sub 3} are examined to determine the effects of doping on the narrow gap exhibited by this compound. With increasing La concentration the energy gap progressively disappears in both {rho} and S and band-like transport develops below 25 K. The T-0 transport energy gap as determined from either {rho} or S scales with the single-impurity Kondo energy scale T{sub K} as determined from magnetic susceptibility measurements, independently of x for x {le} 0.25. This result strongly suggests that the gap arises from band hybridization that is driven by Kondo-like many-body correlations rather than from single-electronic interactions.

  2. Magnetic doping and kondo effect in bi(2)se(3) nanoribbons.

    PubMed

    Cha, Judy J; Williams, James R; Kong, Desheng; Meister, Stefan; Peng, Hailin; Bestwick, Andrew J; Gallagher, Patrick; Goldhaber-Gordon, David; Cui, Yi

    2010-03-10

    A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically doped Bi2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than approximately 2%, low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics.

  3. Tuning bulk and surface conduction in the proposed topological Kondo insulator SmB(6).

    PubMed

    Syers, Paul; Kim, Dohun; Fuhrer, Michael S; Paglione, Johnpierre

    2015-03-01

    Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo-insulator compound SmB_{6} are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single (100) surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100  e^{2}/h, exhibits a field-effect mobility of 133  cm^{2}/Vs and a large carrier density of ∼2×10^{14}  cm^{-2}, in good agreement with recent photoemission results. With the ability to gate modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.

  4. Transport properties of the topological Kondo insulator SmB6 under the irradiation of light

    NASA Astrophysics Data System (ADS)

    Zhu, Guo-Bao; Yang, Hui-Min

    2016-10-01

    In this paper, we study transport properties of the X point in the Brillouin zone of the topological Kondo insulator SmB6 under the application of a circularly polarized light. The transport properties at high-frequency regime and low-frequency regime as a function of the ratio (κ) of the Dresselhaus-like and Rashba-like spin-orbit parameter are studied based on the Floquet theory and Boltzmann equation respectively. The sign of Hall conductivity at high-frequency regime can be reversed by the ratio κ and the amplitude of the light. The amplitude of the current can be enhanced by the ratio κ. Our findings provide a way to control the transport properties of the Dirac materials at low-frequency regime. Project supported by the National Natural Science Foundation of China (Grant Nos. 11504095 and 11447145), the Foundation of Heze University (Grant Nos. XY14B002 and XYPY01), and the Project funded by the Higher Educational Science and Technology Program of Shandong Province, China (Grant No. J15LJ55).

  5. Strongly correlated plexcitonics: evolution of the Fano resonance in the presence of Kondo correlations.

    PubMed

    Goker, A

    2015-05-01

    We study the optical absorption of a system consisting of a diatomic molecule that exhibits strong electron correlations coupled to metal nanoparticles possessing plasmon resonances by invoking the time-dependent non-crossing approximation. We investigate the evolution of the Fano resonance arising from the plasmon-exciton coupling when both atoms are Coulomb blockaded. We found that the Fano resonance rapidly dwindles as the ambient temperature exceeds the Kondo temperature of the singly occupied discrete state with higher energy and vanishes entirely at elevated temperatures. Our results show that even boosting the plasmon-exciton coupling above this temperature scale fails to revive the Fano resonance. We propose a microscopic model that accounts for these results. We suggest that a possible remedy for observation of the Fano resonance at high ambient temperatures is to position the singly occupied discrete state with the higher energy as close as possible to the Fermi level of the contacts while keeping the emitter resonance constant to prevent the merger of the Fano and plasmon resonances. PMID:25858207

  6. Collective excitations from composite orders in Kondo lattice with non-Kramers doublets

    NASA Astrophysics Data System (ADS)

    Hoshino, S.; Kuramoto, Y.

    2015-03-01

    Goldstone modes emerge associated with spontaneous breakdown of the continuous symmetry in the two-channel Kondo lattice, which describes strongly correlated f-electron systems with a non-Kramers doublet at each site. This paper derives the spectra of these collective modes by the equation of motion method together with the random phase approximation. The diagonal composite order breaks the SU(2) channel symmetry, and the symmetry-restoring collective mode couples with magnetic field. On the other hand, the off-diagonal or superconducting composite order breaks the gauge symmetry of conduction electrons, and the collective mode couples with charge excitations near the zone boundary. At half-filling of the conduction bands, the spectra of these two modes become identical by a shift of the momentum, owing to the SO(5) symmetry of the system. The velocity of each Goldstone mode involves not only the Fermi velocity of conduction electrons but amplitude of the mean field as a multiplying factor. Detection of the Goldstone mode should provide a way to identify the composite order parameter.

  7. Fano Profiles in STM Spectroscopy of Single and Corraled Kondo Adsorbates

    NASA Astrophysics Data System (ADS)

    Gadzuk, J. W.; Plihal, M.

    2001-03-01

    Resonance tunneling STM studies of transition metal atoms adsorbed on noble metal surfaces have produced spatially-dependent differential conductance versus voltage spectra, frequently observed to be asymmetric Fano lineshapes. The basic ideas behind the Fano profile of isolated atoms have been adapted to a theory of STM spectroscopy of atoms adsorbed on surfaces. The state of the tunneling electron within an STM tip biased with respect to the surface is regarded as the initially excited state. The atom on the surface plays the role of Fano’s discrete state embedded in the continuum. The normalized differential conductivity associated with the resonance, the STM equivalent of a spectral lineshape, is described by an expression that is related to, but more complicated than the Fano formula. It also contains more information, particularly that which is relevant to electron surface transport and scattering from artificially-synthesized surface nanostructures such as quantum corrals. Theoretical temperature and tip-position-dependent tunneling characteristics for Kondo systems such as single and “corraled” Co or Ce adsorbed on Au(111) will be presented and discussed.

  8. Fano resonance and hybridization gap in the Kondo lattice URu2Si2^*

    NASA Astrophysics Data System (ADS)

    Park, Wan Kyu; Tobash, P. H.; Ronning, F.; Bauer, E. D.; Sarrao, J. L.; Thompson, J. D.; Greene, L. H.

    2012-02-01

    The nature of the `hidden' order transition in URu2Si2 remains puzzling despite intensive research over the past two and half decades. A key question under debate is whether a hybridization gap between the renormalized bands can be identified as the long-sought hidden order parameter. We report on the measurement of a hybridization gap in URu2Si2 employing a spectroscopic technique based on quasiparticle scattering across a ballistic metallic junction [1]. The differential conductance data exhibit an asymmetric double-peak structure, a signature for a Fano resonance in a Kondo lattice [2]. The extracted hybridization gap opens well above the hidden order transition temperature, indicating that it is not the order parameter for the hidden order phase. Our results place constraints on the origin of the hidden order transition in URu2Si2.[4pt] [1] W. K. Park et al., arXiv:1110.5541.[0pt] [2] M. Maltseva, M. Dzero, P. Coleman, PRL 103, 206402 (2009).

  9. Topological surface states in Kondo insulator SmB6 via planar tunneling spectroscopy*

    NASA Astrophysics Data System (ADS)

    Park, Wan Kyu; Sun, Lunan; Noddings, Alex; Greene, Laura; Kim, Dae-Jeong; Fisk, Zachary

    Samarium hexaboride (SmB6) belongs to a class of materials called Kondo insulators in which the hybridization between itinerant electrons and local moments leads to an emergent state of matter. With inherently large spin-orbit coupling along with strong correlation, SmB6 has been recently predicted to be topological meaning that topologically robust conducting states should exist at its surfaces. Although extensive investigations have provided growing evidence for the existence of such states, corroborative spectroscopic evidences are still lacking unlike in the weakly correlated counterparts. We adopt planar tunneling spectroscopy to unveil their detailed nature and behavior utilizing its inherently high energy resolution. Measurements of tunneling conductance on two different crystal surfaces (001) and (011) reveal the expected linear density of states for two and one Dirac cones, respectively. Moreover, it is found that these topological states cease to be protected well before they merge into the bulk states at the gap edges. Microscopic modeling of the tunneling processes accounting for the interaction with spin excitons as predicted by a recent theory provide consistent explanations for all the observed features, corroborating the proposed picture on the incompletely protected surface states in SmB6

  10. One-dimensional edge state transport in a topological Kondo insulator

    NASA Astrophysics Data System (ADS)

    Nakajima, Yasuyuki; Syers, Paul; Wang, Xiangfeng; Wang, Renxiong; Paglione, Johnpierre

    2016-03-01

    Topological insulators, with metallic boundary states protected against time-reversal-invariant perturbations, are a promising avenue for realizing exotic quantum states of matter, including various excitations of collective modes predicted in particle physics, such as Majorana fermions and axions. According to theoretical predictions, a topological insulating state can emerge from not only a weakly interacting system with strong spin-orbit coupling, but also in insulators driven by strong electron correlations. The Kondo insulator compound SmB6 is an ideal candidate for realizing this exotic state of matter, with hybridization between itinerant conduction electrons and localized f-electrons driving an insulating gap and metallic surface states at low temperatures. Here we exploit the existence of surface ferromagnetism in SmB6 to investigate the topological nature of metallic surface states by studying magnetotransport properties at very low temperatures. We find evidence of one-dimensional surface transport with a quantized conductance value of e2/h originating from the chiral edge channels of ferromagnetic domain walls, providing strong evidence that topologically non-trivial surface states exist in SmB6.

  11. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  12. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  13. State of the art in semiconductor detectors

    SciTech Connect

    Rehak, P. ); Gatti, E. )

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs.

  14. Signal processing for semiconductor detectors

    SciTech Connect

    Goulding, F.S.; Landis, D.A.

    1982-02-01

    A balanced perspective is provided on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed.

  15. Artificial atoms on semiconductor surfaces

    PubMed Central

    Tisdale, W. A.; Zhu, X.-Y.

    2011-01-01

    Semiconductor nanocrystals are called artificial atoms because of their atom-like discrete electronic structure resulting from quantum confinement. Artificial atoms can also be assembled into artificial molecules or solids, thus, extending the toolbox for material design. We address the interaction of artificial atoms with bulk semiconductor surfaces. These interfaces are model systems for understanding the coupling between localized and delocalized electronic structures. In many perceived applications, such as nanoelectronics, optoelectronics, and solar energy conversion, interfacing semiconductor nanocrystals to bulk materials is a key ingredient. Here, we apply the well established theories of chemisorption and interfacial electron transfer as conceptual frameworks for understanding the adsorption of semiconductor nanocrystals on surfaces, paying particular attention to instances when the nonadiabatic Marcus picture breaks down. We illustrate these issues using recent examples from our laboratory. PMID:21097704

  16. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  17. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  18. Medical applications of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Mancha, Sylvia D.; Keipert, Andreas; Prairie, Michael W.

    1994-06-01

    The High Power Semiconductor Laser Technology (HPSLT) program is currently developing, in-house, a belt pack medical laser. This compact semiconductor laser device provides the field paramedic or physician a unique portable laser capability. The pack consists of a completely self-contained laser system that fits inside a belt pack. Several other medical applications being investigated by the HPSLT program include urological applications, photodynamic therapy, and ophthalmic applications.

  19. Dye Sensitization of Semiconductor Particles

    SciTech Connect

    Hartland, G. V.

    2003-01-13

    In this project electron transfer at semiconductor liquid interfaces was examined by ultrafast time-resolved and steady-state optical techniques. The experiments primarily yielded information about the electron transfer from titanium dioxide semiconductor particles to absorbed molecules. The results show that the rate of electron transfer depends on the structure of the molecule, and the crystalline phase of the particle. These results can be qualitatively explained by Marcus theory for electron transfer.

  20. Semiconductor crystal high resolution imager

    NASA Technical Reports Server (NTRS)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  1. Survey of cryogenic semiconductor devices

    SciTech Connect

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  2. Simulating nanoscale semiconductor devices.

    SciTech Connect

    Salinger, Andrew Gerhard; Zhao, P.; Woolard, D. L.; Kelley, C. Tim; Lasater, Matthew S.

    2005-03-01

    The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

  3. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  4. Tunneling spectroscopy of a single quantum dot coupled to a superconductor: From Kondo ridge to Andreev bound states

    NASA Astrophysics Data System (ADS)

    Pillet, J.-D.; Joyez, P.; Žitko, Rok; Goffman, M. F.

    2013-07-01

    We performed tunneling spectroscopy of a carbon nanotube quantum dot (QD) coupled to a metallic reservoir either in the normal or in the superconducting state. We explore how the Kondo resonance, observed when the QD's occupancy is odd and the reservoir is normal, evolves towards Andreev bound states (ABS) in the superconducting state. Within this regime, the ABS spectrum observed is consistent with a quantum phase transition from a singlet to a degenerate magnetic doublet ground state, in quantitative agreement with a single-level Anderson model with superconducting leads.

  5. Field dependence of the magnon dispersion in the Kondo lattice CeCu2 up to 12 T

    NASA Astrophysics Data System (ADS)

    Schedler, R.; Witte, U.; Rotter, M.; Loewenhaupt, M.; Schmidt, W.

    2005-05-01

    CeCu2 can be classified as a Kondo lattice which shows antiferromagnetic (AF) order below TN=3.5K [R. Trump et al., J. Appl. Phys. 69, 4699 (1991)]. The orthorhombic crystal and the simple AF magnetic structure with two magnetic moments in the primitive unit cell requires two magnon modes which are observed in zero and low magnetic fields and well described by spin wave theory. However, at higher fields, at and above 3T, an unexpected, additional magnetic excitation is observed. In contrast to the two low-energy magnon modes, it exhibits a steeper (factor 2) field dependence and a flat dispersion. Its origin is unclear.

  6. Transport Spectroscopy of Coupled Quantum Dots in Conditions of the Kondo Effect

    NASA Astrophysics Data System (ADS)

    Glazman, Leonid

    2005-03-01

    We develop electron transport theory for novel devices [1,2], which are interesting in the context of correlated electrons physics. The device proposed in Ref. [1] is designed for an observation of a non-Fermi-liquid behavior of itinerant electrons. The device measured in Ref. [2] may serve a similar purpose, and also may become important for quantum computing.In the case of Ref. [1], our theory [3] provides a strategy for tuning to the non-Fermi-liquid fixed point -- a quantum critical point in the space of device parameters. We explore the corresponding quantum phase transition, and make explicit predictions for the behavior of differential conductance in the vicinity of the quantum critical point. Motivated by the measurements [2], we developed a theory of conductance of Kondo quantum dots coupled by the RKKY interaction [4]. Investigation of the differential conductance at fixed interaction strength may allow one to distinguish between the possible ground states of the system. Transition between the ground states is achieved by tuning the interaction strength; the nature of the transition (which includes a possibility of a non-Fermi-liquid point) can be extracted from the temperature dependence of the linear conductance.This research is supported by NSF grants DMR02-37296 and EIA02- 10736.1. Y. Oreg and D. Goldhaber-Gordon, Phys. Rev. Lett. 90, p. 136602 (2003). 2. N.J. Craig J.M. Taylor, E.A. Lester, C.M. Marcus, M.P. Hanson, and A.C. Gossard, Science 304, 565 (2004).3. M.G. Vavilov and L.I. Glazman, preprint cond-mat/0404366.4. M. Pustilnik, L. Borda, L.I. Glazman, and J. von Delft, Phys. Rev. B 69, 115316 (2004).

  7. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  8. Spin-glass freezing above the ordering temperature for the Kondo ferromagnet CeNi{sub 0.4}Cu{sub 0.6}

    SciTech Connect

    Gomez Sal, J.C.; Garcia Soldevilla, J.; Blanco, J.A.; Espeso, J.I.; Rodriguez Fernandez, J.; Luis, F.; Bartolome, F.; Bartolome, J.

    1997-11-01

    The low-temperature magnetic and transport properties of the orthorhombic CeNi{sub 0.4}Cu{sub 0.6} compound have been determined from the analysis of specific heat, ac magnetic susceptibility, electrical resistivity, elastic and inelastic neutron scattering. These measurements present intriguing experimental results that could not be explained within the usual phenomenology of Ce-based compounds. C{sub p} and {chi}{sub ac} present anomalies around 1 K corresponding to ferromagnetic order as confirmed by neutron diffraction. The magnetic structure is collinear with very reduced moments, 0.6{mu}{sub B}/Ce lying in the b direction. Additionally, a clear Kondo behavior is observed with a Kondo temperature T{sub K}=1.9K estimated from quasielastic neutron scattering. Above the ordering temperature, further anomalies are observed in C{sub p} and {chi}{sub ac} that could not be explained as originating from crystal electric field or Kondo effects. From the frequency and field dependence of the {chi}{sub ac}, above T{sub c}, a spin-glass state with a freezing temperature T{sub f}=2K is proposed for this compound. This unusual magnetic behavior is discussed in terms of mixed (positive and negative) Ruderman-Kittel-Kasuya-Yosida interactions, randomness (structural disorder), large hybridization (Kondo effect), and strong magnetocrystalline anisotropy (crystal electric field effects). {copyright} {ital 1997} {ital The American Physical Society}

  9. Reprint of : Kondo effect in a carbon nanotube with spin-orbit interaction and valley mixing: A DM-NRG study

    NASA Astrophysics Data System (ADS)

    Mantelli, Davide; Paşcu Moca, Cătălin; Zaránd, Gergely; Grifoni, Milena

    2016-08-01

    We investigate the effects of spin-orbit interaction (SOI) and valley mixing on the transport and dynamical properties of a carbon nanotube (CNT) quantum dot in the Kondo regime. As these perturbations break the pseudo-spin symmetry in the CNT spectrum but preserve time-reversal symmetry, they induce a finite splitting Δ between formerly degenerate Kramers pairs. Correspondingly, a crossover from the SU(4) to the SU(2)-Kondo effect occurs as the strength of these symmetry breaking parameters is varied. Clear signatures of the crossover are discussed both at the level of the spectral function as well as of the conductance. In particular, we demonstrate numerically and support with scaling arguments that the Kondo temperature scales inversely with the splitting Δ in the crossover regime. In presence of a finite magnetic field, time reversal symmetry is also broken. We investigate the effects of both parallel and perpendicular fields (with respect to the tube's axis) and discuss the conditions under which Kondo revivals may be achieved.

  10. Antiferromagnetic Kondo lattice in the layered compounds Re2NiGa9Ge2 (Re =Ce, Pr, Sm)

    NASA Astrophysics Data System (ADS)

    Zhu, Yanglin; Liu, Jinyu; Hu, Jin; Adams, Daniel; Spinu, Leonard; Mao, Zhiqiang

    Intermetallic compounds containing rare-earth/actinide elements with 4f/5f electrons have formed a special family of strongly correlated materials, i.e. heavy fermion systems. We have recently found a new layered rare earth intermetallic system showing moderate heavy fermion behavior: Re2NiGa9Ge2 (Re =Ce, Sm, Pr). The Re =Ce and Sm members were previously synthesized, while their electronic properties have not been reported. We have recently grown single crystals of Re2NiGa9Ge2 (Re =Ce, Sm, Pr) and characterized their electronic and magnetic properties. We find all these materials are antiferromagnetic, with TN = 2.5 K, 5 K, 3.4 K respectively for Re =Ce, Pr and Sm. Moreover, they also exhibit large values of electronic specific coefficient: γ ~ 101 mJ mol-Ce-1 K-2 for Re =Ce, 368 mJ mol-Pr-1 K-2 for Re =Pr, and 196.4 mJ mol-Sm-1 K-2 for Re =Sm, indicating enhanced Kondo effect and the presence of AFM Kondo lattice. Our findings suggest that Re2NiGa9Ge2 (Re =Ce, Pr, Sm) could be interesting candidate materials for exploring novel exotic properties of correlated electrons through external parameter tuning such as chemical substitution and pressure.

  11. Light induced suppression of Kondo effect at amorphous LaAlO3/SrTiO3 interface

    NASA Astrophysics Data System (ADS)

    Liu, G. Z.; Qiu, J.; Jiang, Y. C.; Zhao, R.; Yao, J. L.; Zhao, M.; Feng, Y.; Gao, J.

    2016-07-01

    We report photoelectric properties of two-dimensional electron gas (2DEG) at an amorphous LaAlO3/SrTiO3 interface. Under visible light illumination (650 nm), an enhancement of electric conductivity is observed over the temperature range from 2 to 300 K. Particularly, a resistance upturn appearing below 25 K, which is further proved to from the Kondo effect, is suppressed by the 650 nm visible light. From the results of light-assisted Hall measurements, light irradiation increases the carrier mobility rather than carrier density in the Kondo regime. It is suggested that light induces the decoherence effect of localized spin states, hence the electron scattering is weakened and the carrier mobility is improved accordingly. Moreover, the enhancement of electrical conductivity by visible light verifies that in-gap states located in the SrTiO3 side of the interface play an important role in the electrical transport of the amorphous SrTiO3-based oxide 2DEG system. Our results provide deeper insight into the photoinduced effects in the 2DEG system, paving the way for the design of optoelectronic devices based on oxides.

  12. Competition between Kondo screening and Magnetism in the LaAlO3 /SrTiO3 Interface

    NASA Astrophysics Data System (ADS)

    Ruhman, Jonathan; Joshua, Arjun; Ilani, Shahal; Altman, Ehud

    2014-03-01

    We present a theory of magnetic phenomena at LaAlO3/SrTiO3 interfaces, which includes coupling between the conduction bands and local magnetic moments originating from charge traps at the interface. Tuning the itinerant electron density drives transitions between a heavy Fermi liquid phase with screened moments and various magnetic states. The dependence of the magnetic phenomena on the electron density stems from competing magnetic interactions between the local moments and the different conduction bands. At low densities only the lowest conduction band, composed of the dxy orbitals of Ti, is occupied. Its antiferromagnetic interaction with the local moments leads to screening of the moments at a Kondo scale that increases with density. However, above a critical density the dxz /dyz bands begin to populate. Their ferromagnetic interaction with the local moments competes with the antiferromagnetic interaction of the dxy band leading to eventual reduction of the Kondo scale with density. We explain the distinct magneto transport regimes seen in experiments as manifestations of the magnetic phase diagram computed from the model. We also present interpretation of previously unpublished data supporting the theoretical model.

  13. Competition between Kondo screening and magnetism at the LaAlO3/SrTiO3 interface

    NASA Astrophysics Data System (ADS)

    Ruhman, Jonathan; Joshua, Arjun; Ilani, Shahal; Altman, Ehud

    2014-09-01

    We present a theory of magnetic and magnetotransport phenomena at LaAlO3/SrTiO3 interfaces, which as a central ingredient includes coupling between the conduction bands and local magnetic moments originating from charge traps at the interface. Tuning the itinerant electron density in the model drives transitions between a heavy Fermi liquid phase with screened moments and various magnetic states. The dependence of the magnetic phenomena on the electron density or gate voltage stems from competing magnetic interactions between the local moments and the different conduction bands. At low densities only the lowest conduction band, composed of the dxy orbitals of Ti, is occupied. Its antiferromagnetic interaction with the local moments leads to screening of the moments at a Kondo scale that increases with density. However, above a critical density, measured in experiments to be nc≈1.7×1013cm-2, the dxz and dyz bands begin to populate. Their ferromagnetic interaction with the local moments competes with the antiferromagnetic interaction of the dxy band leading to eventual reduction of the Kondo scale with density. We explain the distinct magnetotransport regimes seen in experiments as manifestations of the magnetic phase diagram computed from the model. We present data showing a relation between the anomalous Hall effect and the resistivity in the system. The data strongly suggest that the concentration of local magnetic moments affecting the transport in the system is much lower than the carrier density, in accord with the theoretical model.

  14. Kondo versus indirect exchange: the role of the lattice and the actual range of RKKY interactions in real materials

    NASA Astrophysics Data System (ADS)

    Allerdt, Andrew; Feiguin, Adrian; Busser, Carlos; Martins, George

    2015-03-01

    Magnetic impurities embedded in a metal interact via an effective Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling mediated by the conduction electrons, which is commonly assumed to be long ranged, with an algebraic decay in the inter-impurity distance. However, they can also form a Kondo screened state that is oblivious to the presence of other impurities. We study the competition mechanisms between both effects on the square and cubic lattices by introducing an exact mapping onto an effective one-dimensional problem that we can solve with the density matrix renormalization group method (DMRG). We show a dramatic departure from the conventional RKKY theory, that can be attributed to the dimensionality and different densities of states, as well as the quantum nature of the magnetic moments. In particular, for dimension d > 1 , Kondo physics dominates even at short distances, while the ferromagnetic RKKY state is energetically unfavorable. Our findings can have clear implications in the interpretation of experiments and for tailoring the magnetic properties of surfaces.

  15. Competition between Kondo and indirect exchange at the edges and bulk of graphene, and 2D materials

    NASA Astrophysics Data System (ADS)

    Allerdt, Andrew; Martins, George; Feiguin, Adrian

    We study the problem of two magnetic impurities at the surface of graphene, BN, MoS2, phosphorene, silicene and germanene using exact numerical methods. We map the band structure of these materials onto one dimensional tight-binding chains in the same spirit as Wilson's numerical renormalization group. We use the density matrix renormalization group to solve the problem exactly, keeping all the information about the underlying lattice. Competition between Kondo and Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions is non-trivial, due to strong non-perturbative effects. Depending on the presence of a pseudogap, or gap, we identify an important directionality and position dependence of the correlations. We present scenarios and regimes where impurities prefer to form their own Kondo clouds instead of an RKKY singlet state, or remain as uncoupled local moments. In the particular case of graphene, ferromagnetism is only stable at half-filling. In addition, we study the effects of spin-orbit coupling, and the presence of edge states.

  16. Ultrafast terahertz spectroscopy study of Kondo insulating thin film SmB6: evidence for an emergent surface state

    NASA Astrophysics Data System (ADS)

    Zhang, Jingdi; Yong, Jie; Takeuchi, Ichiro; Greene, Richard; Averitt, Richard

    We utilize terahertz time domain spectroscopy to investigate thin films of the heavy fermion compound SmB6, a prototype Kondo insulator. Temperature dependent terahertz (THz) conductivity measurements reveal a rapid decrease in the Drude weight and carrier scattering rate at ~T* =20 K, well below the hybridization gap onset temperature (100 K). Moreover, a low-temperature conductivity plateau (below 20K) indicates the emergence of a surface state with an effective electron mass of 0.1me. Conductivity dynamics following optical excitation are also measured and interpreted using Rothwarf-Taylor (R-T) phenomenology, yielding a hybridization gap energy of 17 meV. However, R-T modeling of the conductivity dynamics reveals a deviation from the expected thermally excited quasiparticle density at temperatures below 20K, indicative of another channel opening up in the low energy electrodynamics. Taken together, these results suggest the onset of a surface state well below the crossover temperature (100K) after long-range coherence of the f-electron Kondo lattice is established. JZ and RDA acknowledge support from DOE - Basic Energy Sciences under Grant No. DE-FG02-09ER46643, under which the THz measurements and data analysis were performed. JY, IT and RLG acknowledge support from ONR N00014-13-1-0635 and NSF DMR 1410665.

  17. Kondo-type behavior of the Ru4 + lattice in LaCu3Ru4O12

    NASA Astrophysics Data System (ADS)

    Riegg, S.; Widmann, S.; Meir, B.; Sterz, S.; Günther, A.; Büttgen, N.; Ebbinghaus, S. G.; Reller, A.; von Nidda, H.-A. Krug; Loidl, A.

    2016-03-01

    Rare d -electron-derived heavy-fermion properties of the solid-solution series LaCu3RuxTi4 -xO12 were studied for 1 ≤x ≤4 by resistivity, susceptibility, specific-heat measurements, and magnetic-resonance techniques. Our results suggest the existence of a coherent Kondo lattice formed by localized Ru 4 d electrons leading to strongly enhanced effective electron masses. Pure ruthenate (x =4 ) is a heavy-fermion metal characterized by a resistivity proportional to T2 at low temperatures T . By increasing titanium substitution the coherent Fermi-liquid state is disturbed, yielding single-ion Kondo-type properties as in the paradigm 4 f -based heavy-fermion compound CexLa1 -xCu2.05Si2 [M. Ocko et al., Phys. Rev. B 64, 195106 (2001), 10.1103/PhysRevB.64.195106]. In LaCu3RuxTi4 -xO12 the heavy-fermion behavior finally breaks down upon crossing the metal-to-insulator transition close to x =2 .

  18. Closing photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Hjalmarson, H.P.; O'Malley, M.W.

    1989-01-01

    One of the most important limitations of Photoconductive Semiconductor Switches (PCSS) for pulsed power applications is the high laser powers required to activate the switches. In this paper, we discuss recent developments on two different aspects of GaAs PCSS that result in reductions in laser power by a factor of nearly 1000. The advantages of using GaAs over Si are many. First of all, the resistivity of GaAs can be orders of magnitude higher than that of the highest resistivity Si material, thus allowing GaAs switches to withstand dc voltages without thermal runaway. Secondly, GaAs has a higher carrier mobility than Si and, thus, is more efficient (per carrier). Finally, GaAs switches can have naturally fast (ns) opening times at room temperature and low fields, microsecond opening times at liquid nitrogen temperature of 77 K, or, on demand, closing and opening at high fields and room temperature by a mechanism called lock-on (see Ref. 1). By contrast, Si switches typically opening times of milliseconds. The amount of laser light required to trigger GaAs for lock-on, or at 77 K, is about three orders of magnitude lower than at room temperature. In this paper we describe the study of lock-on in GaAs and InP, as well as switching of GaAs at 77 K. We shall show that when GaAs is switched at 77 K, the carrier lifetime is about three orders of magnitude longer than it is at room temperature. We shall explain the change in lifetime in terms of the change in electron capture cross section of the deep levels in GaAs (these are defect or impurity levels in the band gap). In the second section, we describe the lock-on effect, now seen in GaAs and InP, and at fields as high as 70 kV/cm. We show how lock-on can be tailored by changing the GaAs temperature or by neutron bombardment. In the third section, we discuss possible lock-on mechanisms. 5 refs., 5 figs.

  19. High mobility emissive organic semiconductor

    PubMed Central

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  20. High mobility emissive organic semiconductor

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-12-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V-1 s-1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m-2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  1. High mobility emissive organic semiconductor.

    PubMed

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm(2) V(-1) s(-1). Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m(-2) and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  2. Organic Semiconductors and its Applications

    NASA Astrophysics Data System (ADS)

    Kamalasanan, M. N.

    2011-10-01

    Organic semiconductors in the form of evaporated or spin coated thin films have many optoelectronic applications in the present electronic industry. They are frequently used in many type of displays, photo detectors, photoconductors for photocopiers and photovoltaic cells. But many p-conjugated molecules and polymer based devices do not provide satisfactory device performance and operational stability. Most of these problems are related to the interfaces they make with other organic materials and electrodes and the low conductivity of the organic layers. The study of organic-metal and organic—organic interfaces as well as electrical doping of organic semiconductors are very important areas of research at present. In this talk, I will be discussing some of the recent advances in this field as well as some of our own results in the area of interface modification and electrical doping of organic semiconductors.

  3. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  4. A brief history of ... semiconductors

    NASA Astrophysics Data System (ADS)

    Jenkins, Tudor

    2005-09-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival of this successful quantum theory of solids, together with a concentration on the growth of pure silicon and germanium and an understanding of their properties, saw an explosion in activity in semiconductor studies that has continued to this day.

  5. Wide band gap semiconductor templates

    DOEpatents

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  6. The processing of semiconductor materials

    NASA Technical Reports Server (NTRS)

    1979-01-01

    Five experiments involving the processing of semiconductor materials were performed during the Skylab mission. After discussions on semiconductors and their unique electronic properties, and techniques of crystal growth, these five experiments are presented. Four melt growth experiments were attempted: (1) steady state growth and segregation under zero gravity (InSb); (2) seeded, containerless solidification of InSb; (3) influence of gravity-free solidification on microsegregation; and (4) directional solidification of InSb-GaSb alloys. One vapor growth experiment, crystal growth by vapor transport, was attempted.

  7. Method of preparing nitrogen containing semiconductor material

    DOEpatents

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  8. Method and structure for passivating semiconductor material

    DOEpatents

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  9. Semiconductor Reliability--Another Field for Physicists.

    ERIC Educational Resources Information Center

    Derman, Samuel; Anderson, Wallace T.

    1994-01-01

    Stresses that an important industrial area is product reliability, especially for semiconductors. Suggests that physics students would benefit from training in semiconductors: the many modes of failure, radiation effects, and electrical contact problems. (MVL)

  10. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  11. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, A.J.

    1985-02-19

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  12. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  13. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  14. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  15. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  16. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  17. Semiconductor films on flexible iridium substrates

    DOEpatents

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  18. A Brief History of ... Semiconductors

    ERIC Educational Resources Information Center

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  19. Hydroplane polishing of semiconductor crystals

    NASA Astrophysics Data System (ADS)

    Gormley, J. V.; Manfra, M. J.; Calawa, A. R.

    1981-08-01

    A new technique for obtaining optically flat, damage-free surfaces on semiconductor crystals has been developed. The polishing is very fast, being capable of removing over 30 μm of materials per minute in the case of GaAs and InP. Initial results indicate that the technique can also be used in the polishing of HgCdTe.

  20. 2010 Defects in Semiconductors GRC

    SciTech Connect

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  1. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  2. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, P.T.

    1985-03-05

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  3. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, Peter T.

    1985-01-01

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  4. Semiconductor ac static power switch

    NASA Technical Reports Server (NTRS)

    Vrancik, J.

    1968-01-01

    Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.

  5. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  6. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  7. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  8. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  9. High-speed semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sze, S. M.

    An introduction to the physical principles and operational characteristics of high-speed semiconductor devices is presented. Consideration is given to materials and technologies for high-speed devices, device building blocks, the submicron MOSFET, homogeneous field-effect transistors, and heterostructure field-effect transistors. Also considered are quantum-effect devices, microwave diodes, and high-speed photonic devices.

  10. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  11. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  12. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  13. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  14. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  15. Kondo effect in Co{sub x}Cu{sub 1-x} granular alloys prepared by chemical reduction method

    SciTech Connect

    Dhara, Susmita Chowdhury, Rajeswari Roy; Bandyopadhyay, Bilwadal

    2015-06-24

    Nanostructured CoCu granular alloys Co{sub x}Cu{sub 1-x} (x ≤ 0.3) have been prepared by chemical reduction method using NaBH{sub 4} as a reducing agent. Electronic transport properties are studied in the temperature range 4-300 K. Resistance exhibits a metallic behavior below room temperature and draws a minimum near 20 K in all the samples except in Co{sub 0.3}Cu{sub 0.7}. This low temperature resistivity minimum diminishes with applied magnetic field. There is also a logarithmic temperature dependence of resistivity at temperatures below 20 K. This phenomenon indicates a Kondo-like scattering mechanism involving magnetic Co impurity spin clusters in Cu host.

  16. Emergent Kondo Lattice Behavior in Iron-Based Superconductors A Fe2As2 (A =K , Rb, Cs)

    NASA Astrophysics Data System (ADS)

    Wu, Y. P.; Zhao, D.; Wang, A. F.; Wang, N. Z.; Xiang, Z. J.; Luo, X. G.; Wu, T.; Chen, X. H.

    2016-04-01

    Here, we experimentally study the origin of d -electron heavy fermion (HF) behavior in iron-based superconductors (FeSCs) A Fe2As2 (A =K , Rb, Cs). Nuclear magnetic resonance on 75As reveals a universal coherent-incoherent crossover with a characteristic temperature T*. Below T*, a so-called "Knight shift anomaly" is first observed in FeSCs, which exhibits a scaling behavior similar to f -electron HF materials. Furthermore, the scaling rule also regulates the manifestation of magnetic fluctuation. These results undoubtedly support an emergent Kondo lattice scenario for the d -electron HF behavior, which qualifies the A Fe2As2 (A =K , Rb, Cs) as d -electron HF superconductors.

  17. Tuning the ground state of the Kondo lattice in UT Bi2 (T = Ag, Au) single crystals

    NASA Astrophysics Data System (ADS)

    Rosa, Priscila; Luo, Yongkang; Pagliuso, Pascoal; Bauer, Eric; Thompson, Joe; Fisk, Zachary

    2015-03-01

    Motivated by the interesting magnetic anisotropy found in the Ce-based heavy fermion family Ce TX2 (T = transition metal, X = pnictogen), here we study the novel U-based parent compounds U TBi2 (T = Ag, Au) by combining magnetization, electrical resistivity, and heat-capacity measurements. The single crystals, synthesized by the self-flux method, also crystallize in the tetragonal HfCuSi2-type structure (space group P4/nmm). Interestingly, although UAgBi2 is a low- γ antiferromagnet below TN = 181 K, UAuBi2 is a moderately heavy uniaxial ferromagnet below Tc = 22 K. Nevertheless, both compounds display the easy-magnetization direction along the c-axis and a large magnetocrystalline anisotropy. Our results point out to an incoherent Kondo behaviour in the paramagnetic state and an intricate competition between crystal field effects and two anisotropic exchange interactions, which lead to the remarkable difference in the observed ground states.

  18. Heavy surface state in a possible topological Kondo insulator: Magnetothermoelectric transport on the (011) plane of SmB6

    DOE PAGES

    Luo, Yongkang; Chen, Hua; Dai, Jianhui; Xu, Zhu -an; Thompson, J. D.

    2015-02-25

    Motivated by the high sensitivity to Fermi surface topology and scattering mechanisms in magnetothermoelectric transport, we have measured the thermopower and Nernst effect on the (011) plane of the proposed topological Kondo insulator SmB6. These experiments, together with electrical resistivity and Hall effect measurements, suggest that the (011) plane also harbors a metallic surface with an effective mass on the order of 10–102 m0. The surface and bulk conductances are well distinguished in these measurements and are categorized into metallic and nondegenerate semiconducting regimes, respectively. As a result, electronic correlations play an important role in enhancing scattering and also contributemore » to the heavy surface state.« less

  19. Emergent Kondo Lattice Behavior in Iron-Based Superconductors AFe_{2}As_{2} (A=K, Rb, Cs).

    PubMed

    Wu, Y P; Zhao, D; Wang, A F; Wang, N Z; Xiang, Z J; Luo, X G; Wu, T; Chen, X H

    2016-04-01

    Here, we experimentally study the origin of d-electron heavy fermion (HF) behavior in iron-based superconductors (FeSCs) AFe_{2}As_{2} (A=K, Rb, Cs). Nuclear magnetic resonance on ^{75}As reveals a universal coherent-incoherent crossover with a characteristic temperature T^{*}. Below T^{*}, a so-called "Knight shift anomaly" is first observed in FeSCs, which exhibits a scaling behavior similar to f-electron HF materials. Furthermore, the scaling rule also regulates the manifestation of magnetic fluctuation. These results undoubtedly support an emergent Kondo lattice scenario for the d-electron HF behavior, which qualifies the AFe_{2}As_{2} (A=K, Rb, Cs) as d-electron HF superconductors. PMID:27104721

  20. Semiconductor detectors in nuclear and particle physics

    SciTech Connect

    Rehak, P.; Gatti, E.

    1992-12-31

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported.

  1. Back-side readout semiconductor photomultiplier

    DOEpatents

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  2. Crystal-field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3

    NASA Astrophysics Data System (ADS)

    Anand, V. K.; Adroja, D. T.; Britz, D.; Strydom, A. M.; Taylor, J. W.; Kockelmann, W.

    2016-07-01

    Inelastic neutron scattering experiments have been carried out to determine the crystal-field states of the Kondo lattice heavy fermions CeRuSn3 and CeRhSn3. Both the compounds crystallize in LaRuSn3-type cubic structure (space group P m 3 ¯n ) in which the Ce atoms occupy two distinct crystallographic sites with cubic (m 3 ¯ ) and tetragonal (4 ¯m .2 ) point symmetries. The INS data of CeRuSn3 reveal the presence of a broad excitation centered around 6-8 meV, which is accounted by a model based on crystal electric field (CEF) excitations. On the other hand, the INS data of isostructural CeRhSn3 reveal three CEF excitations around 7.0, 12.2, and 37.2 meV. The neutron intensity sum rule indicates that the Ce ions at both cubic and tetragonal Ce sites are in Ce3 + state in both CeRuSn3 and CeRhSn3. The CEF level schemes for both the compounds are deduced. We estimate the Kondo temperature TK=3.1 (2 ) K for CeRuSn3 from neutron quasielastic linewidth in excellent agreement with that determined from the scaling of magnetoresistance which gives TK=3.2 (1 ) K. For CeRhSn3, the neutron quasielastic linewidth gives TK≈4.6 K. For both CeRuSn3 and CeRhSn3, the ground state of Ce3 + turns out to be a quartet for the cubic site and a doublet for the tetragonal site.

  3. Dimensional crossover in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-08-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5-10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies.

  4. Dimensional crossover in semiconductor nanostructures

    PubMed Central

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-01-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5–10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies. PMID:27577091

  5. Hypersonic modes in nanophononic semiconductors.

    PubMed

    Hepplestone, S P; Srivastava, G P

    2008-09-01

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  6. Radiation Effects on Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Liu, Guangyu

    In order to observe and analyze the behavior of semiconductor devices under radiation exposure, a real time measurement system has been built so that investigations can be carried out before, during, and after radiation exposure. The system consists of an IBM personal computer with IEEE488 I/O interface board and various Hewlett-Packard instruments. Real time measurement and device parameter characterization programs have been written to accommodate the study. Such a system provides the ability to do not only direct and dynamic measurements, but also comprehensive parameter analyses for semiconductor devices. It is well known that MOS devices are vulnerable to radiation produced ionization. Many MOS device parameters are radiation sensitive. Based on real time measurement results and the mathematical model of a CMOS inverter, a radiation hardening design method has been developed. With the example of noise margin optimization, the concept of desensitizing device parameters is expected to minimize radiation damage to MOS integrated circuits.

  7. Dimensional crossover in semiconductor nanostructures.

    PubMed

    McDonald, Matthew P; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-01-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5-10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies. PMID:27577091

  8. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  9. Selective Etching of Semiconductor Glassivation

    NASA Technical Reports Server (NTRS)

    Casper, N.

    1982-01-01

    Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

  10. Acoustoelectric effect in semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Mensah, S. Y.; Allotey, F. K. A.; Adjepong, S. K.

    1993-10-01

    Acoustoelectric effect in semiconductor superlattice has been studied for acoustic wave whose wavelength lambda = 2pi/q is smaller than the mean free path of the electrons l (where ql approaches 1). Unlike the homogeneous bulk material where Weinreich relation is independent of the wave number q in the superlattice we observe a dependence on q i.e. spatial dispersion. In the presence of applied constant field E a threshold value was obtained where the acoustoelectric current changes direction.

  11. Cooling and mounting power semiconductors

    NASA Astrophysics Data System (ADS)

    Wetzel, P.

    1980-04-01

    The article examines the process of heat dissipation from power semiconductors. It is shown that for the relationship between temperature loading and dissipation it is possible to take an 'Ohm's law of heat abduction' to define the thermal impedance. The computation of the optimal size for a heatsink is demonstrated in detail. Discussion covers the types of heat dissipation such as heat radiation, heat conduction, and convection. Finally, some factors to consider during installation are examined.

  12. Evolution from a non-Fermi liquid Kondo lattice to intermediate valence behaviour in CeRhSn(1-x)In(x).

    PubMed

    Ślebarski, A; Fijałkowski, M; Goraus, J

    2012-03-28

    We present investigations of the magnetic and electric transport properties, specific heat, and electronic structure of the intermetallic and strongly correlated system of CeRhSn(1-x)In(x) compounds. The main goal of this paper is to determine the hybridization energy between the f electron and conduction electron states, V(cf), and its influence on the ground state properties of the system. The complementary experimental data are discussed on the basis of the Anderson model for a periodic Kondo lattice. CeRhSn is known as a non-Fermi liquid, while CeRhIn is a valence fluctuating system. We discuss the ground state properties of CeRhSn(1-x)In(x) and compare the results with those obtained for the doped Ce-based Kondo insulators.

  13. Evolution from a non-Fermi liquid Kondo lattice to intermediate valence behaviour in CeRhSn(1-x)In(x).

    PubMed

    Ślebarski, A; Fijałkowski, M; Goraus, J

    2012-03-28

    We present investigations of the magnetic and electric transport properties, specific heat, and electronic structure of the intermetallic and strongly correlated system of CeRhSn(1-x)In(x) compounds. The main goal of this paper is to determine the hybridization energy between the f electron and conduction electron states, V(cf), and its influence on the ground state properties of the system. The complementary experimental data are discussed on the basis of the Anderson model for a periodic Kondo lattice. CeRhSn is known as a non-Fermi liquid, while CeRhIn is a valence fluctuating system. We discuss the ground state properties of CeRhSn(1-x)In(x) and compare the results with those obtained for the doped Ce-based Kondo insulators. PMID:22369764

  14. Upper critical field and Kondo effects in Fe(Te0.9Se0.1) thin films by pulsed field measurements

    DOE PAGES

    Salamon, Myron B.; Cornell, Nicholas; Jaime, Marcelo; Balakirev, Fedor F.; Zakhidov, Anvar; Huang, Jijie; Wang, Haiyan

    2016-02-10

    The transition temperatures of epitaxial films of Fe(Te0:9Se0:1) are remarkably insensitive to applied magnetic field, leading to predictions of upper critical fields Bc2(T = 0) in excess of 100 T. Using pulsed magnetic fields, we find Bc2(0) to be on the order of 45 T, similar to values in bulk material and still in excess of the paramagnetic limit. The same films show strong magnetoresistance in fields above Bc2(T), consistent with the observed Kondo minimum seen above Tc. Fits to the temperature dependence in the context of the WHH model, using the experimental value of the Maki parameter, require anmore » effective spin-orbit relaxation parameter of order unity. Lastly, we suggest that Kondo localization plays a similar role to spin-orbit pair breaking in making WHH fits to the data.« less

  15. Technology Roadmaps for Compound Semiconductors

    PubMed Central

    Bennett, Herbert S.

    2000-01-01

    The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615

  16. Kondo screening and spin excitation in few-layer CoPc molecular assembly stacking on Pb(111) surface: A DFT+HEOM study

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Zheng, Xiao; Yang, Jinlong

    2016-10-01

    Transition metal phthalocyanine molecules adsorbed on a metal substrate exhibit rich spin-related phenomena such as magnetic anisotropy, spin excitation, and Kondo effect. In this work, we investigate theoretically few-layer cobalt phthalocyanine (CoPc) molecular assembly stacking on Pb(111) surface with the use of a combined density functional theory (DFT) and hierarchical equations of motion (HEOM) approach. Calculation results indicate that the local spin properties of CoPc/Pb(111) composites depend critically on the number of adsorption layers. The first layer of CoPc on the Pb(111) surface serves as a spin-insulating buffer, while the CoPc molecules in the second layer exhibit spin-1/2 Kondo effect with a Kondo temperature of about 22 K. In a triple-layer CoPc assembly stacking on Pb(111), the antiferromagnetic coupling between the second and third layers leads to local spin-flip excitations under finite bias voltages, which gives rise to characteristic signatures in the differential conductance spectra. The DFT+HEOM approach thus provides a practical means for investigating the local electronic and spin properties of two-dimensional molecular assemblies adsorbed on the metal surface. The insights obtained from the first-principles based simulations could be useful for experimental manipulation or design of magnetic composite systems.

  17. Handbook of Semiconductor Technology, 2 Volume Set

    NASA Astrophysics Data System (ADS)

    Jackson, Kenneth A.; Schröter, Wolfgang

    2000-09-01

    Semiconductor technology is the basis of today's microelectronics industry with its many impacts on our modern life, i.e. computer and communication technology. This two-volume handbook covers the basics of semiconductor processing technology, which are as essential for the design of new microelectronic devices as the fundamental physics. Volume 1 'Electronic Structure and Properties' covers the structure and properties of semiconductors, with particular emphasis on concepts relevant to semiconductor technology. Volume 2 'Processing of Semiconductors' deals with the enabling materials technology for the electronics industry. World-renowned authors have contributed to this unique treatment of the processing of semiconductors and related technologies. Of interest to physicists and engineers in research and in the electronics industry, this is a valuable reference source and state-of-the-art review by the world's top authors.

  18. Moving liquids with light: Photoelectrowetting on semiconductors

    NASA Astrophysics Data System (ADS)

    Arscott, Steve

    2011-12-01

    By linking semiconductor physics and wetting phenomena a brand new effect termed ``photoelectrowetting-on-semiconductors'' is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014-8×1018 cm-3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics.

  19. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Register on November 17, 2009 (74 FR 59249). At the request of the petitioners, the Department reviewed the... Employment and Training Administration Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical Information Center, Woburn, MA; Amended Certification...

  20. Stretchable semiconductor elements and stretchable electrical circuits

    DOEpatents

    Rogers, John A.; Khang, Dahl-Young; Menard, Etienne

    2009-07-07

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  1. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  2. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  3. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  4. Reflection technique for thermal mapping of semiconductors

    DOEpatents

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  5. Surface morphologies, electronic structures, and Kondo effect of lanthanide(III)-phthalocyanine molecules on Au(111) by using STM, STS and FET properties for next generation devices.

    PubMed

    Katoh, Keiichi; Komeda, Tadahiro; Yamashita, Masahiro

    2010-05-28

    The crystal structures of double-decker single-molecule magnets (SMMs) LnPc(2) (Ln = Tb(III) and Dy(III); Pc = phthalocyanine) and non-SMM YPc(2) were determined by using single crystal X-ray diffraction analysis. The compounds are isomorphous to each other. The compounds have metal-centers (M(3+) = Tb, Dy, and Y) sandwiched by two Pc ligands via eight isoindole-nitrogen atoms in a square-antiprism fashion. The twist angle between the two Pc ligands is 41.4 degrees. Scanning tunneling microscopy (STM) was used to investigate the compounds adsorbed on a Au(111) surface, deposited by using thermal evaporation in ultra-high vacuum. Both MPc(2) with eight-lobes and MPc with four-lobes, which has lost one Pc ligand, were observed. In the scanning tunneling spectroscopy (STS) images of TbPc molecules at 4.8 K, a Kondo peak with a Kondo temperature (T(K)) of approximately 250 K was observed near the Fermi level (V = 0 V). On the other hand, DyPc, YPc and MPc(2) exhibited no Kondo peak. In order to understand the observed Kondo effect, the energy splitting of sublevels in a crystal field should be taken into consideration. As the next step in our studies on the SMM/Kondo effect in Tb-Pc derivatives, we investigated the electronic transport properties of Ln-Pc molecules as the active layer in top- and bottom-contact thin-film organic field effect transistor (OFETs) devices. Tb-Pc molecule devices exhibit p-type semiconducting properties with a hole mobility (mu(H)) of approximately 10(-4) cm(2) V(-1) s(-1). Interestingly, the Dy-Pc based devices exhibited ambipolar semiconducting properties with an electron mobility (mu(e)) of approximately 10(-5) and a hole mobility (mu(H)) of approximately 10(-4) cm(2) V(-1) s(-1). This behavior has important implications for the electronic structure of the molecules. PMID:20396817

  6. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1979-01-01

    The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

  7. HERO resistant semiconductor bridge igniter

    NASA Astrophysics Data System (ADS)

    Bickes, R. W., Jr.; Greenway, D.; Grubelich, M. C.; Meyer, W. J.; Hartman, J. K.; McCampbell, C. B.

    1992-10-01

    The problem of accidental ignition of explosive components when exposed to radio frequency (RF) environments or radiation from other electromagnetic sources is commonly referred to as Hazards of Electromagnetic Radiation to Ordnance (HERO). One illustration of such a HERO problem is the MK 149 Phalanx ammunition, which is sensitive to RF energy over a broad range of frequencies. We have demonstrated that a potential solution to the Phalanx HERO problem consists of a semiconductor bridge (SCB) igniter that incorporates microcircuitry to protect the SCB from the RF environment. Direct RF injection and ground plane tests have demonstrated the resistance of our designs to severe RF environments.

  8. High gain photoconductive semiconductor switching

    SciTech Connect

    Zutavern, F.J.; Loubriel, G.M.; O'Malley, M.W.; Helgeson, W.D.; McLaughlin, D.L.

    1991-01-01

    Switching properties are reported for high gain photoconductive semiconductor switches (PCSS). A 200 ps pulse width laser was used in tests to examine the relations between electric field, rise time, delay, and minimum optical trigger energy for switches which reached 80 kV in a 50 {Omega} transmission line with rise times as short as 600 ps. Infrared photoluminescence was imaged during high gain switching providing direct evidence for current filamentation. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. 16 refs., 10 figs.

  9. Processing of insulators and semiconductors

    SciTech Connect

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  10. Semiconductor foundry, lithography, and partners

    NASA Astrophysics Data System (ADS)

    Lin, Burn J.

    2002-07-01

    The semiconductor foundry took off in 1990 with an annual capacity of less than 0.1M 8-inch-equivalent wafers at the 2-mm node. In 2000, the annual capacity rose to more than 10M. Initially, the technology practiced at foundries was 1 to 2 generations behind that at integrated device manufacturers (IDMs). Presently, the progress in 0.13-mm manufacturing goes hand-in-hand with any of the IDMs. There is a two-order of magnitude rise in output and the progress of technology development outpaces IDMs. What are the reasons of the success? Is it possible to sustain the pace? This paper shows the quick rise of foundries in capacity, sales, and market share. It discusses the their uniqueness which gives rise to advantages in conjunction with challenges. It also shows the role foundries take with their customer partners and supplier partners, their mutual dependencies, as well as expectations. What role then does lithography play in the foundries? What are the lithographic challenges to sustain the pace of technology? The experience of technology development and transfer, at one of the major foundries, is used to illustrate the difficulties and progresses made. Looking into the future, as semiconductor manufacturing will become even more expensive and capital investment more prohibitive, we will make an attempt to suggest possible solutions.

  11. Novel room temperature ferromagnetic semiconductors

    SciTech Connect

    Gupta, Amita

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting

  12. Hybrid anode for semiconductor radiation detectors

    DOEpatents

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  13. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  14. Energetics of the Semiconductor-Electrolyte Interface.

    ERIC Educational Resources Information Center

    Turner, John A.

    1983-01-01

    The use of semiconductors as electrodes for electrochemistry requires an understanding of both solid-state physics and electrochemistry, since phenomena associated with both disciplines are seen in semiconductor/electrolyte systems. The interfacial energetics of these systems are discussed. (JN)

  15. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

    1998-01-27

    A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  16. Preparation of a semiconductor thin film

    DOEpatents

    Pehnt, Martin; Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

    1998-01-01

    A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  17. Silicon carbide, a high temperature semiconductor

    NASA Technical Reports Server (NTRS)

    Powell, J. A.

    1983-01-01

    Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

  18. Stable surface passivation process for compound semiconductors

    DOEpatents

    Ashby, Carol I. H.

    2001-01-01

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  19. Photoelectroconversion by Semiconductors: A Physical Chemistry Experiment.

    ERIC Educational Resources Information Center

    Fan, Qinbai; And Others

    1995-01-01

    Presents an experiment designed to give students some experience with photochemistry, electrochemistry, and basic theories about semiconductors. Uses a liquid-junction solar cell and illustrates some fundamental physical and chemical principles related to light and electricity interconversion as well as the properties of semiconductors. (JRH)

  20. Moving liquids with light: Photoelectrowetting on semiconductors

    PubMed Central

    Arscott, Steve

    2011-01-01

    By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014−8×1018 cm−3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics. PMID:22355699

  1. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  2. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  3. Semiconductor switch geometry with electric field shaping

    DOEpatents

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  4. Creating semiconductor metafilms with designer absorption spectra.

    PubMed

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L

    2015-01-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells. PMID:26184335

  5. Creating semiconductor metafilms with designer absorption spectra

    PubMed Central

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2015-01-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells. PMID:26184335

  6. Semiconductor technology trend and requirements for masks

    NASA Astrophysics Data System (ADS)

    Komiya, Hiroyoshi

    1999-08-01

    The fabrication cost of the semiconductor device is increasing because the fabrication cost per wafer unit area and the mask cost are increasing rapidly with the design rule decreased. The rapid increase in the mask cost will influence the semiconductor industry growth. The progress in the lithography, including the mask, is the key issue for the progress in the entire semiconductor technology beyond 180 nm design rule, because the mask is indispensable for any types of lithography, and is regarded as one of the most critical technologies, both in resolution and productivity. To continue the progress in the entire semiconductor technology and the growth of the semiconductor business, it is indispensable to make challenges in the low cost and high precision mask technology under the cooperation with related industries and academia. It is especially important to develop the cost optimum solution for the total lithography technology including masks.

  7. Manipulating semiconductor colloidal stability through doping.

    PubMed

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  8. Creating semiconductor metafilms with designer absorption spectra

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2015-07-01

    The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells.

  9. Non-Fermi liquid behavior and the undersceened Kondo effect in Fe1-yCoySi

    NASA Astrophysics Data System (ADS)

    Wu, Yan; Fulfer, Brad; Chan, Julia; Young, David; Ditusa, John

    2015-03-01

    Mn or Co substitutions into the narrow band-gap insulator FeSi introduce charge carriers, either holes or electrons, accompanied by an equal density of more localized magnetic moments resulting in an interesting insulator-to-metal transition (IMT). Mn doping of FeSi exhibits an IMT where the nascent metal displays intriguing field sensitive non-Fermi-Liquid (NFL) behavior due to the undercompensation of S = 1 impurity moments by the spin-1/2 hole carriers. Here, we present the results of an investigation of Fe1-yCoySi (0 <= y <= 0.1). Our magnetization and susceptibility measurements indicate that for y<0.03 Co-impurities alsointroduce a S = 1 magnetic moment that have a tendency to form singlets whereas for larger ya ferromagnetic interaction that grows with y. We have discovered a NFLbehavior for y<0.03 that evolves into the standard disordered Fermi-liquid form either by applying a magnetic field or by increasing y. The results of specific heat measurements on Fe1-yCoySi,performed to explore the underlying underscreened Kondo mechanism, to investigate its variation with field and composition,and to compare with our Fe1-xMnxSi data will be presented.

  10. Kondo Lattice and Antiferromagnetic Behavior in Quaternary CeTAl4Si2 (T = Rh, Ir) Single Crystals

    NASA Astrophysics Data System (ADS)

    Maurya, Arvind; Kulkarni, Ruta; Thamizhavel, Arumugam; Paudyal, Durga; Dhar, Sudesh Kumar

    2016-03-01

    We have explored in detail the anisotropic magnetic properties of CeRhAl4Si2 and CeIrAl4Si2, which undergo two antiferromagnetic transitions, at TN1 = 12.6 and 15.5 K, followed by a second transition at TN2 = 9.4 and 13.8 K, respectively, with the [001]-axis as the relatively easy axis of magnetization. The electrical resistivity at ambient and applied pressure provides evidence of Kondo interaction in both compounds, further supported by a reduced value of the entropy associated with the magnetic ordering. The Sommerfeld coefficient γ is inferred to be 195.6 and 49.4 mJ/(mol K2) for CeRhAl4Si2 and CeIrAl4Si2, respectively, classifying these materials as moderate heavy-fermion compounds. The crystal electric field energy levels are derived from the peak seen in the Schottky heat capacity. Furthermore, we have also performed electronic structure calculations by using the local spin density approximation + U [LSDA+U] approach, which provide physical insights on the observed magnetic behavior of these two compounds.

  11. Unusual Kondo-hole effect and crystal-field frustration in Nd-doped CeRhIn5

    NASA Astrophysics Data System (ADS)

    Rosa, P. F. S.; Oostra, A.; Thompson, J. D.; Pagliuso, P. G.; Fisk, Z.

    2016-07-01

    We investigate single crystals of Ce1 -xNdxRhIn5 by means of x-ray-diffraction, microprobe, magnetic susceptibility, heat capacity, and electrical resistivity measurements. Our data reveal that the antiferromagnetic transition of CeRhIn5, at TNCe=3.8 K, is linearly suppressed with xNd. We associate this effect with the presence of a "Kondo hole" created by Nd substitution. The extrapolation of TNCe to zero temperature, however, occurs at xc˜0.3 , which is below the two-dimensional percolation limit found in Ce1 -xLaxRhIn5 . This result strongly suggests the presence of a crystal-field induced magnetic frustration. Near xNd˜0.2 , the Ising antiferromagnetic order from Nd3 + ions is stabilized and TNNd increases up to 11 K in NdRhIn5. Our results shed light on the effects of magnetic doping in heavy-fermion antiferromagnets and stimulate the study of such systems under applied pressure.

  12. Three-dimensional bulk electronic structure of the Kondo lattice CeIn3 revealed by photoemission

    PubMed Central

    Zhang, Yun; Lu, Haiyan; Zhu, Xiegang; Tan, Shiyong; Liu, Qin; Chen, Qiuyun; Feng, Wei; Xie, Donghua; Luo, Lizhu; Liu, Yu; Song, Haifeng; Zhang, Zhengjun; Lai, Xinchun

    2016-01-01

    We show the three-dimensional electronic structure of the Kondo lattice CeIn3 using soft x-ray angle resolved photoemission spectroscopy in the paramagnetic state. For the first time, we have directly observed the three-dimensional topology of the Fermi surface of CeIn3 by photoemission. The Fermi surface has a complicated hole pocket centred at the Γ-Z line and an elliptical electron pocket centred at the R point of the Brillouin zone. Polarization and photon-energy dependent photoemission results both indicate the nearly localized nature of the 4f electrons in CeIn3, consistent with the theoretical prediction by means of the combination of density functional theory and single-site dynamical mean-field theory. Those results illustrate that the f electrons of CeIn3, which is the parent material of CeMIn5 compounds, are closer to the localized description than the layered CeMIn5 compounds. PMID:27641364

  13. Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

    NASA Astrophysics Data System (ADS)

    García-Hemme, E.; Montero, D.; García-Hernansanz, R.; Olea, J.; Mártil, I.; González-Díaz, G.

    2016-07-01

    We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10 K to 300 K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1  ×  1020 and 1.3  ×  1021 cm-3. Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wavefunction localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.

  14. First-principles study of the Kondo physics of a single Pu impurity in a Th host

    DOE PAGES

    Zhu, Jian -Xin; Albers, R. C.; Haule, K.; Wills, J. M.

    2015-04-23

    Based on its condensed-matter properties, crystal structure, and metallurgy, which includes a phase diagram with six allotropic phases, plutonium is one of the most complicated pure elements in its solid state. Its anomalous properties, which are indicative of a very strongly correlated state, are related to its special position in the periodic table, which is at the boundary between the light actinides that have itinerant 5f electrons and the heavy actinides that have localized 5f electrons. As a foundational study to probe the role of local electronic correlations in Pu, we use the local-density approximation together with a continuous-time quantummore » Monte Carlo simulation to investigate the electronic structure of a single Pu atom that is either substitutionally embedded in the bulk and or adsorbed on the surface of a Th host. This is a simpler case than the solid phases of Pu metal. With the Pu impurity atom we have found a Kondo resonance peak, which is an important signature of electronic correlations, in the local density of states around the Fermi energy. We show that the peak width of this resonance is narrower for Pu atoms at the surface of Th than for those in the bulk due to a weakened Pu - 5f hybridization with the ligands at the surface.« less

  15. First-principles study of the Kondo physics of a single Pu impurity in a Th host

    SciTech Connect

    Zhu, Jian -Xin; Albers, R. C.; Haule, K.; Wills, J. M.

    2015-04-23

    Based on its condensed-matter properties, crystal structure, and metallurgy, which includes a phase diagram with six allotropic phases, plutonium is one of the most complicated pure elements in its solid state. Its anomalous properties, which are indicative of a very strongly correlated state, are related to its special position in the periodic table, which is at the boundary between the light actinides that have itinerant 5f electrons and the heavy actinides that have localized 5f electrons. As a foundational study to probe the role of local electronic correlations in Pu, we use the local-density approximation together with a continuous-time quantum Monte Carlo simulation to investigate the electronic structure of a single Pu atom that is either substitutionally embedded in the bulk and or adsorbed on the surface of a Th host. This is a simpler case than the solid phases of Pu metal. With the Pu impurity atom we have found a Kondo resonance peak, which is an important signature of electronic correlations, in the local density of states around the Fermi energy. We show that the peak width of this resonance is narrower for Pu atoms at the surface of Th than for those in the bulk due to a weakened Pu - 5f hybridization with the ligands at the surface.

  16. Kondo lattice and antiferromagnetic behavior in quaternary CeTAl4Si2 (T = Rh, Ir) single crystals

    DOE PAGES

    Maurya, Arvind; Kulkarni, Ruta; Thamizhavel, Arumugam; Paudyal, Durga; Dhar, Sudesh Kumar

    2016-02-26

    Here, we have explored in detail the anisotropic magnetic properties of CeRhAl4Si2 and CeIrAl4Si2, which undergo two antiferromagnetic transitions, at TN1 = 12.6 and 15.5 K, followed by a second transition at TN2 = 9.4 and 13.8 K, respectively, with the [001]-axis as the relatively easy axis of magnetization. The electrical resistivity at ambient and applied pressure provides evidence of Kondo interaction in both compounds, further supported by a reduced value of the entropy associated with the magnetic ordering. The Sommerfeld coefficient γ is inferred to be 195.6 and 49.4 mJ/(mol K2) for CeRhAl4Si2 and CeIrAl4Si2, respectively, classifying these materialsmore » as moderate heavy-fermion compounds. The crystal electric field energy levels are derived from the peak seen in the Schottky heat capacity. Furthermore, we have also performed electronic structure calculations by using the local spin density approximation + U [LSDA+U] approach, which provide physical insights on the observed magnetic behavior of these two compounds.« less

  17. Interplay of atomic randomness and Kondo effect in disordered metallic conductor La2NiSi3.

    PubMed

    Gnida, Daniel; Szlawska, Maria; Swatek, Przemysław; Kaczorowski, Dariusz

    2016-11-01

    A polycrystalline sample of La2NiSi3 was investigated by means of heat capacity, magnetic susceptibility, magnetization, electrical resistivity and magnetoresistivity measurements. The compound was basically characterized as a Pauli paramagnet with metallic-like electrical conductivity, notably reduced in magnitude and weakly temperature dependent, as is usually observed for atomically disordered systems. Furthermore, the experimental data revealed the presence of a small amount of paramagnetic impurities. As a result, the low-temperature electrical resistivity in La2NiSi3 was found to be governed by both quantum corrections due to electron-electron interactions ([Formula: see text] contribution) and spin-flip Kondo scattering ([Formula: see text] contribution). The presence of paramagnetic impurities led to an increase in s-electron spin splitting due to the s-d interactions, manifested by a B (1/2) dependence of the magnetoresistivity, anomalously observed in the present study for thermal energy being larger than the Zeeman splitting energy [Formula: see text]. PMID:27603776

  18. First-principles study of the Kondo physics of a single Pu impurity in a Th host

    NASA Astrophysics Data System (ADS)

    Zhu, Jian-Xin; Albers, R. C.; Haule, K.; Wills, J. M.

    2015-04-01

    Based on its condensed-matter properties, crystal structure, and metallurgy, which includes a phase diagram with six allotropic phases, plutonium is one of the most complicated pure elements in its solid state. Its anomalous properties, which are indicative of a very strongly correlated state, are related to its special position in the periodic table, which is at the boundary between the light actinides that have itinerant 5 f electrons and the heavy actinides that have localized 5 f electrons. As a foundational study to probe the role of local electronic correlations in Pu, we use the local-density approximation together with a continuous-time quantum Monte Carlo simulation to investigate the electronic structure of a single Pu atom that is either substitutionally embedded in the bulk and or adsorbed on the surface of a Th host. This is a simpler case than the solid phases of Pu metal. For the Pu impurity atom we have found a Kondo resonance peak, which is an important signature of electronic correlations, in the local density of states around the Fermi energy. Furthermore, we show that the peak width of this resonance is narrower for Pu atoms at the surface of Th than for those in the bulk due to a weakened Pu -5 f hybridization with the ligands at the surface.

  19. Interplay of atomic randomness and Kondo effect in disordered metallic conductor La2NiSi3

    NASA Astrophysics Data System (ADS)

    Gnida, Daniel; Szlawska, Maria; Swatek, Przemysław; Kaczorowski, Dariusz

    2016-11-01

    A polycrystalline sample of La2NiSi3 was investigated by means of heat capacity, magnetic susceptibility, magnetization, electrical resistivity and magnetoresistivity measurements. The compound was basically characterized as a Pauli paramagnet with metallic-like electrical conductivity, notably reduced in magnitude and weakly temperature dependent, as is usually observed for atomically disordered systems. Furthermore, the experimental data revealed the presence of a small amount of paramagnetic impurities. As a result, the low-temperature electrical resistivity in La2NiSi3 was found to be governed by both quantum corrections due to electron-electron interactions (ρ ˜ {{T}1/2} contribution) and spin-flip Kondo scattering (ρ ˜ log T contribution). The presence of paramagnetic impurities led to an increase in s-electron spin splitting due to the s-d interactions, manifested by a B 1/2 dependence of the magnetoresistivity, anomalously observed in the present study for thermal energy being larger than the Zeeman splitting energy {{k}\\text{B}}T>g{μ\\text{B}}B .

  20. Three-dimensional bulk electronic structure of the Kondo lattice CeIn3 revealed by photoemission.

    PubMed

    Zhang, Yun; Lu, Haiyan; Zhu, Xiegang; Tan, Shiyong; Liu, Qin; Chen, Qiuyun; Feng, Wei; Xie, Donghua; Luo, Lizhu; Liu, Yu; Song, Haifeng; Zhang, Zhengjun; Lai, Xinchun

    2016-01-01

    We show the three-dimensional electronic structure of the Kondo lattice CeIn3 using soft x-ray angle resolved photoemission spectroscopy in the paramagnetic state. For the first time, we have directly observed the three-dimensional topology of the Fermi surface of CeIn3 by photoemission. The Fermi surface has a complicated hole pocket centred at the Γ-Z line and an elliptical electron pocket centred at the R point of the Brillouin zone. Polarization and photon-energy dependent photoemission results both indicate the nearly localized nature of the 4f electrons in CeIn3, consistent with the theoretical prediction by means of the combination of density functional theory and single-site dynamical mean-field theory. Those results illustrate that the f electrons of CeIn3, which is the parent material of CeMIn5 compounds, are closer to the localized description than the layered CeMIn5 compounds. PMID:27641364

  1. Three-dimensional bulk electronic structure of the Kondo lattice CeIn3 revealed by photoemission

    NASA Astrophysics Data System (ADS)

    Zhang, Yun; Lu, Haiyan; Zhu, Xiegang; Tan, Shiyong; Liu, Qin; Chen, Qiuyun; Feng, Wei; Xie, Donghua; Luo, Lizhu; Liu, Yu; Song, Haifeng; Zhang, Zhengjun; Lai, Xinchun

    2016-09-01

    We show the three-dimensional electronic structure of the Kondo lattice CeIn3 using soft x-ray angle resolved photoemission spectroscopy in the paramagnetic state. For the first time, we have directly observed the three-dimensional topology of the Fermi surface of CeIn3 by photoemission. The Fermi surface has a complicated hole pocket centred at the Γ-Z line and an elliptical electron pocket centred at the R point of the Brillouin zone. Polarization and photon-energy dependent photoemission results both indicate the nearly localized nature of the 4f electrons in CeIn3, consistent with the theoretical prediction by means of the combination of density functional theory and single-site dynamical mean-field theory. Those results illustrate that the f electrons of CeIn3, which is the parent material of CeMIn5 compounds, are closer to the localized description than the layered CeMIn5 compounds.

  2. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials. PMID:23884341

  3. Semiconductor processing with excimer lasers

    SciTech Connect

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.

  4. Heating device for semiconductor wafers

    DOEpatents

    Vosen, S.R.

    1999-07-27

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

  5. Heating device for semiconductor wafers

    DOEpatents

    Vosen, Steven R.

    1999-01-01

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

  6. Space station power semiconductor package

    NASA Technical Reports Server (NTRS)

    Balodis, Vilnis; Berman, Albert; Devance, Darrell; Ludlow, Gerry; Wagner, Lee

    1987-01-01

    A package of high-power switching semiconductors for the space station have been designed and fabricated. The package includes a high-voltage (600 volts) high current (50 amps) NPN Fast Switching Power Transistor and a high-voltage (1200 volts), high-current (50 amps) Fast Recovery Diode. The package features an isolated collector for the transistors and an isolated anode for the diode. Beryllia is used as the isolation material resulting in a thermal resistance for both devices of .2 degrees per watt. Additional features include a hermetical seal for long life -- greater than 10 years in a space environment. Also, the package design resulted in a low electrical energy loss with the reduction of eddy currents, stray inductances, circuit inductance, and capacitance. The required package design and device parameters have been achieved. Test results for the transistor and diode utilizing the space station package is given.

  7. Electrolysis of a molten semiconductor.

    PubMed

    Yin, Huayi; Chung, Brice; Sadoway, Donald R

    2016-08-24

    Metals cannot be extracted by electrolysis of transition-metal sulfides because as liquids they are semiconductors, which exhibit high levels of electronic conduction and metal dissolution. Herein by introduction of a distinct secondary electrolyte, we reveal a high-throughput electro-desulfurization process that directly converts semiconducting molten stibnite (Sb2S3) into pure (99.9%) liquid antimony and sulfur vapour. At the bottom of the cell liquid antimony pools beneath cathodically polarized molten stibnite. At the top of the cell sulfur issues from a carbon anode immersed in an immiscible secondary molten salt electrolyte disposed above molten stibnite, thereby blocking electronic shorting across the cell. As opposed to conventional extraction practices, direct sulfide electrolysis completely avoids generation of problematic fugitive emissions (CO2, CO and SO2), significantly reduces energy consumption, increases productivity in a single-step process (lower capital and operating costs) and is broadly applicable to a host of electronically conductive transition-metal chalcogenides.

  8. Electrolysis of a molten semiconductor

    NASA Astrophysics Data System (ADS)

    Yin, Huayi; Chung, Brice; Sadoway, Donald R.

    2016-08-01

    Metals cannot be extracted by electrolysis of transition-metal sulfides because as liquids they are semiconductors, which exhibit high levels of electronic conduction and metal dissolution. Herein by introduction of a distinct secondary electrolyte, we reveal a high-throughput electro-desulfurization process that directly converts semiconducting molten stibnite (Sb2S3) into pure (99.9%) liquid antimony and sulfur vapour. At the bottom of the cell liquid antimony pools beneath cathodically polarized molten stibnite. At the top of the cell sulfur issues from a carbon anode immersed in an immiscible secondary molten salt electrolyte disposed above molten stibnite, thereby blocking electronic shorting across the cell. As opposed to conventional extraction practices, direct sulfide electrolysis completely avoids generation of problematic fugitive emissions (CO2, CO and SO2), significantly reduces energy consumption, increases productivity in a single-step process (lower capital and operating costs) and is broadly applicable to a host of electronically conductive transition-metal chalcogenides.

  9. Boron doping a semiconductor particle

    SciTech Connect

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  10. Boron doping a semiconductor particle

    SciTech Connect

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  11. Semiconductor electrochemistry of coal pyrite

    SciTech Connect

    Osseo-Asare, K.

    1992-05-01

    This project seeks to advance the fundamental understanding of the physicochemical processes occurring at the pyrite/aqueous interface, in the context of coal cleaning, coal desulfurization, and acid mine drainage. A novel approach to the study of pyrite aqueous electrochemistry is proposed, based on the use of both synthetic and natural (i.e. coal-derived) pyrite specimens, the utilization of pyrite both in the form of micro (i.e. colloidal and subcolloidal) and macro (i.e. rotating ring disk)-electrodes, and the application of in-situ direct electroanalytical and spectroelectrochemical characterization techniques. Central to this research is the recognition that pyrite is a semiconductor material. (Photo)electrochemical experiments will be conducted to unravel the mechanisms of anodic and cathodic processes such as those associated with pyrite decomposition and the reduction of oxidants such as molecular oxygen and the ferric ion.

  12. Phosphorus doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  13. Phosphorous doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  14. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials.

  15. Size-dependent properties of semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Kwak, Hyun Wook

    Doping is crucial to many potential applications of nanometer-sized semiconductors. Since their properties are strongly affected by both doping and quantum size effect, it is important to understand how dopants will influence its media under strong quantum confinement. In this dissertation, we will discuss the role of quantum confinement in the properties of nanometer-sized semiconductors doped with impurities. It is well-known that electronic and optical properties of nanometer-sized semiconductors can vary with size. We present size-dependent properties of lithium doped silicon and zinc oxide nanocrystals as examples. With the help of first-principles methods based on real space approach, we find that not only the size itself but also the chemical nature of the impurity is important to determine the properties of nanometer-sized semiconductors. We will also discuss size-induced magnetism in semiconductor nanostructures doped with non-magnetic impurities. From recent studies, it has been proposed that magnetic semiconductors can be designed by using non-magnetic defects, e.g., through the introduction of an extrinsic impurity atom that does not exhibit magnetism by itself. We examine this idea with silicon and zinc oxide nanostructures doped with impurities. We find that quantum size effect may induce magnetism in doped nanostructures. The evidence of the size-dependent magnetic properties offers a new perspective for the design of semiconductor-based spintronic materials.

  16. Universal transport signatures in two-electron molecular quantum dots: gate-tunable Hund's rule, underscreened Kondo effect and quantum phase transitions

    NASA Astrophysics Data System (ADS)

    Florens, Serge; Freyn, Axel; Roch, Nicolas; Wernsdorfer, Wolfgang; Balestro, Franck; Roura-Bas, Pablo; Aligia, A. A.

    2011-06-01

    We review here some universal aspects of the physics of two-electron molecular transistors in the absence of strong spin-orbit effects. Several recent quantum dot experiments have shown that an electrostatic backgate could be used to control the energy dispersion of magnetic levels. We discuss how the generally asymmetric coupling of the metallic contacts to two different molecular orbitals can indeed lead to a gate-tunable Hund's rule in the presence of singlet and triplet states in the quantum dot. For gate voltages such that the singlet constitutes the (non-magnetic) ground state, one generally observes a suppression of low voltage transport, which can yet be restored in the form of enhanced cotunneling features at finite bias. More interestingly, when the gate voltage is controlled to obtain the triplet configuration, spin S = 1 Kondo anomalies appear at zero bias, with non-Fermi liquid features related to the underscreening of a spin larger than 1/2. Finally, the small bare singlet-triplet splitting in our device allows fine-tuning with the gate between these two magnetic configurations, leading to an unscreening quantum phase transition. This transition occurs between the non-magnetic singlet phase, where a two-stage Kondo effect occurs, and the triplet phase, where the partially compensated (underscreened) moment is akin to a magnetically 'ordered' state. These observations are put theoretically into a consistent global picture by using new numerical renormalization group simulations, tailored to capture sharp finite-voltage cotunneling features within the Coulomb diamonds, together with complementary out-of-equilibrium diagrammatic calculations on the two-orbital Anderson model. This work should shed further light on the complicated puzzle still raised by multi-orbital extensions of the classic Kondo problem.

  17. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  18. OPENING ADDRESS: Heterostructures in Semiconductors

    NASA Astrophysics Data System (ADS)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  19. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  20. Controlling the stoichiometry and doping of semiconductor materials

    DOEpatents

    Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

    2016-08-16

    Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

  1. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  2. High throughput combinatorial screening of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Mao, Samuel S.

    2011-11-01

    This article provides an overview of an advanced combinatorial material discovery platform developed recently for screening semiconductor materials with properties that may have applications ranging from radiation detectors to solar cells. Semiconductor thin-film libraries, each consisting of 256 materials of different composition arranged into a 16×16 matrix, were fabricated using laser-assisted evaporation process along with a combinatorial mechanism to achieve variations. The composition and microstructure of individual materials on each thin-film library were characterized with an integrated scanning micro-beam x-ray fluorescence and diffraction system, while the band gaps were determined by scanning optical reflection and transmission of the libraries. An ultrafast ultraviolet photon-induced charge probe was devised to measure the mobility and lifetime of individual thin-film materials on semiconductor libraries. Selected results on the discovery of semiconductors with desired band gaps and transport properties are illustrated.

  3. Library Analog Semiconductor Devices SPICE Simulators

    SciTech Connect

    Deveney, Michael F.; Archer, Wendel; Bogdan, Carolyn W.

    1996-07-23

    SPICE-SANDIA.LIB is a library of parameter sets and macromodels of semiconductor devices. They are used with Spice-based (SPICE is a program for electronic circuit analysis) simulators to simulate electronic circuits.

  4. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  5. Thermovoltaic semiconductor device including a plasma filter

    DOEpatents

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  6. Boundary Condition for Modeling Semiconductor Nanostructures

    NASA Technical Reports Server (NTRS)

    Lee, Seungwon; Oyafuso, Fabiano; von Allmen, Paul; Klimeck, Gerhard

    2006-01-01

    A recently proposed boundary condition for atomistic computational modeling of semiconductor nanostructures (particularly, quantum dots) is an improved alternative to two prior such boundary conditions. As explained, this boundary condition helps to reduce the amount of computation while maintaining accuracy.

  7. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  8. Amorphous Semiconductor Thin Films, an Introduction

    SciTech Connect

    Martin, Peter M.

    2003-12-01

    The field of amorphous semiconductors is so large that I cannot do it justice, but I hope this short column gives you some insight into the properties and materials available, and the issues involved.

  9. Hall effect anomaly and low-temperature metamagnetism in the Kondo compound CeAgBi2

    NASA Astrophysics Data System (ADS)

    Thomas, S. M.; Rosa, P. F. S.; Lee, S. B.; Parameswaran, S. A.; Fisk, Z.; Xia, J.

    2016-02-01

    Heavy fermion (HF) materials exhibit a rich array of phenomena due to the strong Kondo coupling between their localized moments and itinerant electrons. A central question in their study is to understand the interplay between magnetic order and charge transport, and its role in stabilizing new quantum phases of matter. Particularly promising in this regard is a family of tetragonal intermetallic compounds Ce T X2 (where T denotes transition metal and X denotes pnictogen), which includes a variety of HF compounds showing T -linear electronic specific heat Ce˜γ T , with γ ˜20 -500 mJ mol-1K-2 , reflecting an effective-mass enhancement ranging from small to modest. Here, we study the low-temperature field-tuned phase diagram of high-quality CeAgBi2 using magnetometry and transport measurements. We find an antiferromagnetic transition at TN=6.4 K with weak magnetic anisotropy and the easy axis along the c axis, similar to previous reports (TN=6.1 K ). This scenario, along with the presence of two anisotropic Ruderman-Kittel-Kasuya-Yosida interactions, leads to a rich field-tuned magnetic phase diagram, consisting of five metamagnetic transitions of both first and second order. In addition, we unveil an anomalous Hall contribution for fields H <54 kOe , which is drastically altered when H is tuned through a trio of transitions at 57, 78, and 84 kOe, suggesting that the Fermi surface is reconstructed in a subset of the metamagnetic transitions.

  10. Investigation of semiconductor clad optical waveguides

    NASA Technical Reports Server (NTRS)

    Batchman, T. E.; Carson, R. F.

    1985-01-01

    A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

  11. A Semiconductor Microlaser for Intracavity Flow Cytometry

    SciTech Connect

    Akhil, O.; Copeland, G.C.; Dunne, J.L.; Gourley, P.L.; Hendricks, J.K.; McDonald, A.E.

    1999-01-20

    Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

  12. Textured semiconductors for enhanced photoconductive terahertz emission

    NASA Astrophysics Data System (ADS)

    Collier, Christopher M.; Krupa, Jeffrey D. A.; Hristovski, Ilija R.; Stirling, Trevor J.; Bergen, Mark H.; Holzman, Jonathan F.

    2016-02-01

    There are severe limitations that photoconductive (PC) terahertz (THz) antennas experience due to Joule heating and ohmic losses, which cause premature device breakdown through thermal runaway. In response, this work introduces PC THz antennas utilizing textured InP semiconductors. These textured InP semiconductors exhibit high surface recombination properties and have shortened carrier lifetimes which limit residual photocurrents in the picoseconds following THz pulse emission—ultimately reducing Joule heating and ohmic losses. Fine- and coarse-textured InP semiconductors are studied and compared to a smooth-textured InP semiconductor, which provides a baseline. The surface area ratio (measuring roughness) of the smooth-, fine-, and coarse-textured InP semiconductors is resolved through a computational analysis of SEM images and found as 1.0 +/- 0.1, 2.9 +/- 0.4, and 4.3 +/- 0.6, respectively. The carrier lifetimes of the smooth-, fine-, and coarse-textured InP semiconductors are found as respective values of 200 +/- 6, 100 +/- 10, and 20 +/- 3 ps when measured with a pump-probe experimental system. The emitted THz electric fields and corresponding consumption of photocurrent are measured with a THz experimental setup. The temporal and spectral responses of PC THz antennas made with each of the textured InP semiconductors are found to be similar; however, the consumption of photocurrent (relating to Joule heating and ohmic losses) is greatly diminished for the semiconductors that are textured. The findings of this work can assist in engineering of small-scale PC THz antennas for high-power operation, where they are extremely vulnerable to premature device breakdown through thermal runaway.

  13. Approximate Analysis of Semiconductor Laser Arrays

    NASA Technical Reports Server (NTRS)

    Marshall, William K.; Katz, Joseph

    1987-01-01

    Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

  14. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  15. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  16. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1995-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  17. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  18. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1996-08-20

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  19. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1998-06-30

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  20. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1998-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.