Sample records for la-ca-mn-o thin films

  1. Single orthorhombic b axis orientation and antiferromagnetic ordering type in multiferroic CaMnO3 thin film with La0.67Ca0.33MnO3 buffer layer

    NASA Astrophysics Data System (ADS)

    Wang, F.; Dong, B. J.; Zhang, Y. Q.; Liu, W.; Zhang, H. R.; Bai, Y.; Li, S. K.; Yang, T.; Sun, J. R.; Wang, Z. J.; Zhang, Z. D.

    2017-09-01

    The detailed crystal structure and antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the antiferromagnetic ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the antiferromagnetic ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33MnO3/CaMnO3 interface, which arises from a competition between the double-exchange ferromagnetic La0.67Ca0.33MnO3 and super-exchange antiferromagnetic CaMnO3 below the spin glass freezing temperature.

  2. Influence of Oxygen Stoichiometry Variations on the Properties of CaMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Goehringer, Tyler; Yong, Grace; Otouloumougoye, Brenda; Keshavarz, Camron; Sharma, Prahash; Tanyi, E. Kevin; Schaefer, David; Kolagani, Rajeswari

    2013-03-01

    The family of alkaline-earth doped rare earth manganese oxides RE1-xAExMnO3 exhibit a rich variety of electronic phases depending on the cation stoichiometry. In thin films of these materials, the oxygen stoichiometry is also a variable, and together with cation stoichiometry is known to play a key role in determining the equilibrium phase. The cation and oxygen stoichiometry variations influence electrical and magnetic properties through changes in the mixed valence state of Mn, i.e. the ratio of Mn3+ to Mn4+ ions. CaMnO3 is one of the end members of this family with x =1. Stoichiometric CaMnO3 is a canted antiferromagnetic insulator with the Mn ion in the Mn4+ valence state. We will present our results on the effects of oxygen content variation on the structural, electrical, and magnetoresistive properties CaMnO3 thin films grown by Pulsed Laser Deposition. These results will be compared to the effects of oxygen stoichiometry variation in thin films of its doped counter-part La1-xCaxMnO3. We will also discuss surface morphology changes associated with variation in oxygen stoichiometry which may be associated with different surface terminations. We acknowledge support from the NSF grant ECCS 1128586 at Towson University.

  3. Phase separation enhanced magneto-electric coupling in La0.7Ca0.3MnO3/BaTiO3 ultra-thin films

    PubMed Central

    Alberca, A.; Munuera, C.; Azpeitia, J.; Kirby, B.; Nemes, N. M.; Perez-Muñoz, A. M.; Tornos, J.; Mompean, F. J.; Leon, C.; Santamaria, J.; Garcia-Hernandez, M.

    2015-01-01

    We study the origin of the magnetoelectric coupling in manganite films on ferroelectric substrates. We find large magnetoelectric coupling in La0.7Ca0.3MnO3/BaTiO3 ultra-thin films in experiments based on the converse magnetoelectric effect. The magnetization changes by around 30–40% upon applying electric fields on the order of 1 kV/cm to the BaTiO3 substrate, corresponding to magnetoelectric coupling constants on the order of α = (2–5)·10−7 s/m. Magnetic anisotropy is also affected by the electric field induced strain, resulting in a considerable reduction of coercive fields. We compare the magnetoelectric effect in pre-poled and unpoled BaTiO3 substrates. Polarized neutron reflectometry reveals a two-layer behavior with a depressed magnetic layer of around 30 Å at the interface. Magnetic force microscopy (MFM) shows a granular magnetic structure of the La0.7Ca0.3MnO3. The magnetic granularity of the La0.7Ca0.3MnO3 film and the robust magnetoelastic coupling at the La0.7Ca0.3MnO3/BaTiO3 interface are at the origin of the large magnetoelectric coupling, which is enhanced by phase separation in the manganite. PMID:26648002

  4. Perpendicular magnetic anisotropy of La0.67Sr0.33MnO3 thin films grown on CaMnO3 buffered SrTiO3

    NASA Astrophysics Data System (ADS)

    Wang, Zhi-Hong; Cristiani, G.; Habermeier, H.-U.; Zhang, Zhen-Rong; Han, Bao-Shan

    2003-10-01

    La0.67Sr0.33MnO3(LSMO) thin films were grown onto CaMnO3(CMO) buffered SrTiO3(100) by pulsed laser deposition. Because of the in-plane compressive strain induced by the lattice mismatch between CMO and LSMO, a perpendicular magnetic anisotropy (PMA) was obtained in the overlayer LSMO. Using the magnetic force microscopy, stripe magnetic domains in association with the PMA were observed at room temperature. Furthermore, the magnetoresistance with in-plane magnetic field parallel and vertical to the measuring current was studied at 5 and 300 K, and its correlation with the magnetic anisotropy has been discussed.

  5. Strain-Engineered Oxygen Vacancies in CaMnO3 Thin Films.

    PubMed

    Chandrasena, Ravini U; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario U; Wijesekara, Kanishka D; Golalikhani, Maryam; Davidson, Bruce A; Arenholz, Elke; Kobayashi, Keisuke; Kobata, Masaaki; de Groot, Frank M F; Aschauer, Ulrich; Spaldin, Nicola A; Xi, Xiaoxing; Gray, Alexander X

    2017-02-08

    We demonstrate a novel pathway to control and stabilize oxygen vacancies in complex transition-metal oxide thin films. Using atomic layer-by-layer pulsed laser deposition (PLD) from two separate targets, we synthesize high-quality single-crystalline CaMnO 3 films with systematically varying oxygen vacancy defect formation energies as controlled by coherent tensile strain. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft X-ray absorption spectroscopy (XAS) in conjunction with bulk-sensitive hard X-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core-hole multiplet calculations with holistic fitting. Our findings open up a promising avenue for designing and controlling new ionically active properties and functionalities of complex transition-metal oxides via strain-induced oxygen-vacancy formation and ordering.

  6. Effects of substrate-induced-strain on the electrical properties and laser induced voltages of tilted La0.67Ca0.33MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang

    2013-07-01

    La0.67Ca0.33MnO3 thin films have been prepared on vicinal cut LaAlO3, (LaAlO3)0.3-(SrAlTaO6)0.7, and SrTiO3 (001) substrates by pulsed laser deposition. The influence of the substrate on the electrical transport properties and laser induced voltage (LIV) effect of the films was investigated. The high insulator to metal transition temperature Tp (263.6 K) and large peak voltage of LIV signal (2.328 V) were observed in the film grown on LaAlO3 substrate. The compressive strain and large Seebeck coefficient anisotropy ΔS (3.62 μV/K) induced by LaAlO3 are thought to be responsible for this result.

  7. Ion-beam-induced ferromagnetism in Ca-doped LaMnO3 thin films grown on Si (100)

    NASA Astrophysics Data System (ADS)

    Sultan, Khalid; Aarif ul Islam, Shah; Habib, Zubida; Ikram, M.; Asokan, K.

    2018-04-01

    The ion-bean-induced room temperature ferromagnetic ordering in pulsed laser deposited Ca-doped LaMnO3 thin films grown on Si (100) are presented in the present study. In addition to this, changes bought by the ion beam in structural, morphological and electrical properties are presented. Dense electronic excitation produced by high energy 120 MeV Ag9+ ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ion irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. It is observed that the irradiated films show higher resistance than unirradiated films for all the compositions.

  8. Electrical Transport and Magnetoresistance Properties of Tensile-Strained CaMnO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Ullery, Dustin; Lawson, Bridget; Zimmerman, William; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Yong, Grace; Smolyaninova, Vera; Kolagani, Rajeswari

    We will present our studies of the electrical transport and magnetoresistance properties of tensile strained CaMnO3 thin films. We observe that the resistivity decreases significantly as the film thickness decreases which is opposite to what is observed in thin films of hole doped manganites. The decrease in resistivity is more pronounced in the films on (100) SrTiO3, with resistivity of the thinnest films being about 3 orders of magnitude lower than that of bulk CaMnO3. Structural changes accompanying resistivity changes cannot be fully explained as due to tensile strain, and indicate the presence of oxygen vacancies. These results also suggest a coupling between tensile strain and oxygen deficiency, consistent with predictions from models based on density functional theory calculations. We observe a change in resistance under the application of moderate magnetic field. Experiments are underway to understand the origin of the magnetoresistance and its possible relation to the tensile strain effects. We acknowledge support from: Towson Office of University Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grants from the Fisher College of Science and Mathematics, and Seed Funding Grant from the School of Emerging technologies.

  9. Influence of the growth parameters on the electronic and magnetic properties of La0.67Sr0.33MnO3 epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Annese, E.; Mori, T. J. A.; Schio, P.; Rache Salles, B.; Cezar, J. C.

    2018-04-01

    The implementation of La0.67Sr0.33MnO3 thin films in multilayered structures in organic and inorganic spintronics devices requires the optimization of their electronic and magnetic properties. In this work we report the structural, morphological, electronic and magnetic characterizations of La0.67Sr0.33MnO3 epitaxial thin films on SrTiO3 substrates, grown by pulsed laser deposition under different growing conditions. We show that the fluence of laser shots and in situ post-annealing conditions are important parameters to control the tetragonality (c/a) of the thin films. The distortion of the structure has a remarkable impact on both surface and bulk magnetism, allowing the tunability of the materials properties for use in different applications.

  10. Current-voltage characteristics and electroresistance in LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 thin film composites.

    PubMed

    Gadani, Keval; Keshvani, M J; Rajyaguru, Bhargav; Dhruv, Davit; Kataria, B R; Joshi, A D; Asokan, K; Shah, N A; Solanki, P S

    2017-11-08

    In this communication, we report results of the electrical transport properties across the interface of composites consisting of n-type LaMnO 3-δ (LMO) and p-type La 0.7 Ca 0.3 MnO 3 (LCMO) manganites grown on LaAlO 3 (LAO) single crystalline substrates using low cost wet chemical solution deposition (CSD) and sophisticated, well-controlled dry chemical vapor deposition (CVD) chemical techniques. The XRD ϕ-scan studies reveal the single crystalline nature of both bilayered composites, with parallel epitaxial growth of LMO and LCMO layers onto the LAO substrate. The valence states of Mn ions in both layers of both composites were identified by performing X-ray photoelectron spectroscopy (XPS). The I-V characteristics of the LMO/LCMO interfaces show strong backward diode-like behavior at higher applied voltages well above the crossover voltage (V NB ). Below V NB , the interfaces demonstrate normal diode-like characteristics throughout the studied temperature range. The electric field-induced modulation of the LMO/LCMO junction resistance of the interfaces has been observed. Electric field-dependent electroresistance (ER) modifications at different temperatures have also been studied. The electrical transport properties have been discussed in the context of various mechanisms, such as charge injection, tunneling, depletion region modification and thermal processes across the interface. The effects of structurally and chemically developed sharp interfaces between the LMO and LCMO layers on the transport properties of the presently studied bilayered thin film composites have been discussed on the basis of correlation between the physicochemical characterization and charge transport behavior. A comparison of different aspects of the transport properties has been presented in the context of the structural strain and crystallinity of the composites grown using both wet and dry chemical techniques.

  11. Characterization of CaMn2O4 By X-Ray Magnetic Linear Dichroism

    NASA Astrophysics Data System (ADS)

    Holroyd, Johnathon; Bhatkar, Harshawardhan; Arenholz, Elke; White, Ben; Neumeier, John; Idzerda, Yves

    2008-05-01

    Perovskite manganite such as LaxCa(1-x)MnO3 (LCMO) have recently drawn attention for their useful electronic and magnetic properties such as Colossal Magnetoresistance. It has been shown that under stress, LCMO thin films show changes in La and Ca concentrations near the interface. One potential impurity under La depleted conditions is antiferromagnetic CaMn2O4. In order to better understand the range of properties available within LCMO systems, it is important to be able to identify and characterize CaMn2O4 within LCMO thin films. X-ray absorption spectroscopy (XAS) and X-ray magnetic linear dichroism (XMLD) are well suited to this task due to their element specificity, sensitivity, and ability to characterize the measure the magnetic properties of antiferromagnetic systems. XAS and XMLD were measured on high quality single crystals of CaMn2O4. These spectra are distinguished from CaMnO3 and demonstrate antiferromagnetic structure.

  12. Strong influence of polaron-polaron interaction on the magnetoresistance effect in La0.7A0.3MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Haijuan; Wang, Kuidong; Zhang, Yuanyuan; Dong, Wenxia; Chen, Long; Tang, Xiaodong; Chen, Jie

    2017-11-01

    The colossal magnetoresistance effect endows La0.7A0.3MnO3 manganites distinctive fascination. Both theoretical and experimental studies demonstrated that the interplay among polarons could significantly influence magnetoresistance. However, the underlying microscopic mechanism of the influence remains elusive due to the lack of experimental evidences. Utilizing ultrafast optical spectroscopy to track the polaron dynamics around Curie temperatures, we observed a diverse two-step recovery process in three sibling manganite thin films with various magnetoresistance effects and Curie temperatures, while the slow step was proposed to be the formation evolution of correlated polarons through the polaron-polaron interaction. Polarons in La0.7Ca0.3MnO3 equilibrate much faster than those in La0.7(Ca0.58Sr0.42)0.3MnO3 and La0.7Sr0.3MnO3, indicating a comparatively tighter interaction between polarons and subsequently a stronger magnetoresistance effect.

  13. Temperature controlled evolution of monoclinic to super-tetragonal phase of epitaxial BiFeO3 thin films on La0.67Sr0.33MnO3 buffered SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Singh, Anar; Kaifeng, Dong; Chen, Jing-Sheng

    2018-03-01

    Epitaxial BiFeO3 thin films of 130nm were deposited by pulsed laser deposition (PLD) technique on La0.67Sr0.33MnO3 buffered SrTiO3 (001) substrate at various temperatures under different ambient oxygen pressures. Reciprocal space mapping reveals that, with decreasing temperature and oxygen pressure, the broadly reported monoclinic phase (MA) of BiFeO3 thin film initially transforms to a tetragonal phase (T1) with c/a =1.05 (1) in a narrow girth of deposition condition and then to a super-tetragonal phase (T2) with giant c/a = 1.24 (1), as confirmed by reciprocal space mapping using high resolution x-ray diffraction. The surface morphology of the films reveals the island growth of the BiFeO3 films deposited at low temperatures. We propose that the transformation from monoclinic to the super-tetragonal phase is essentially due to the manifestation of excess local strain as a result of the island growth. This study offers a recipe to grow the super-tetragonal phase of BiFeO3, with giant c/a =1.24 (1) which exhibits exceptionally large ferroelectric polarization, on ferromagnetic layer La0.67Sr0.33MnO3. This phase of BiFeO3 can be utilized for the ferroelectric control of magnetism at the interface of BiFeO3 and La0.67Sr0.33MnO3.

  14. Phase stability and B-site ordering in La{sub 2}NiMnO{sub 6} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jin, Xiao-Wei; Lu, Lu; Liu, Ming

    2016-07-18

    Thin films of multiferroic double-perovskite La{sub 2}NiMnO{sub 6} are prepared on (001)-oriented SrTiO{sub 3}, (La{sub 0.289}Sr{sub 0.712})(Al{sub 0.633}Ta{sub 0.356})O{sub 3}, and LaSrAlO{sub 4} substrates by pulsed laser deposition. Microstructure investigation by advanced electron microscopy shows that the La{sub 2}NiMnO{sub 6} films have a monoclinic structure on the SrTiO{sub 3} substrates and a rhombohedral structure on the (La{sub 0.289}Sr{sub 0.712})(Al{sub 0.633}Ta{sub 0.356})O{sub 3} and LaSrAlO{sub 4} substrates. Atomic-scale elemental maps of the monoclinic and rhombohedral phases reveal a short-range and/or partial ordering of the B-sites. In addition, domains and columnar grains are found in the films. Our results demonstrate that themore » phase and microstructure of the La{sub 2}NiMnO{sub 6} films can be tuned by epitaxial strains induced by different substrates.« less

  15. Formation of self-organized Mn3O4 nanoinclusions in LaMnO3 films

    NASA Astrophysics Data System (ADS)

    Pomar, Alberto; Konstantinović, Zorica; Bagués, Nuria; Roqueta, Jaume; López-Mir, Laura; Balcells, Lluis; Frontera, Carlos; Mestres, Narcis; Gutiérrez-Llorente, Araceli; Šćepanović, Maja; Lazarević, Nenad; Popović, Zoran; Sandiumenge, Felip; Martínez, Benjamín; Santiso, José

    2016-09-01

    We present a single-step route to generate ordered nanocomposite thin films of secondary phase inclusions (Mn3O4) in a pristine perovskite matrix (LaMnO3) by taking advantage of the complex phase diagram of manganese oxides. We observed that in samples grown under vacuum growth conditions from a single LaMnO3 stoichiometric target by Pulsed Laser Deposition, the most favourable mechanism to accommodate Mn2+ cations is the spontaneous segregation of self-assembled wedge-like Mn3O4 ferrimagnetic inclusions inside a LaMnO3 matrix that still preserves its orthorhombic structure and its antiferromagnetic bulk-like behaviour. A detailed analysis on the formation of the self-assembled nanocomposite films evidences that Mn3O4 inclusions exhibit an epitaxial relationship with the surrounding matrix that it may be explained in terms of a distorted cubic spinel with slight ( 9º) c-axis tilting. Furthermore, a Ruddlesden-Popper La2MnO4 phase, helping to the stoichiometry balance, has been identified close to the interface with the substrate. We show that ferrimagnetic Mn3O4 columns influence the magnetic and transport properties of the nanocomposite by increasing its coercive field and by creating local areas with enhanced conductivity in the vicinity of the inclusions.

  16. Strain-controlled electronic properties and magnetorelaxor behaviors in electron-doped CaMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Xiang, P.-H.; Yamada, H.; Sawa, A.; Akoh, H.

    2009-02-01

    We have fabricated epitaxial thin films of electron-doped manganite Ca1-xCexMnO3 (CCMO) with 0≤x≤0.08. The transport properties of CCMO films are very sensitive to substrate-controlled epitaxial strain. For the CCMO(x =0.05) film, the metallic transport characteristic is observed only on a nearly lattice-matched NdAlO3 (NAO) substrate, while tensilely and compressively stressed films are insulating. The CCMO(x =0.06) film on the NAO substrate shows a large magnetoresistance characteristic of a magnetorelaxor. This behavior can be explained in terms of the phase separation and the irreversible growth of the metallic domain in antiferromagnetic insulating matrix.

  17. Structural and morphological studies on Bi{sub 1-x}Ca{sub x}MnO{sub 3} thin films grown by RF magnetron sputtering

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pugazhvadivu, K. S.; Santhiya, M.; Tamilarasan, K., E-mail: dr.k.tamilarasan@gmail.com

    2016-05-23

    Bi{sub 1-x}Ca{sub x}MnO{sub 3} (0 ≤ X ≤ 0.4) thin films are deposited on n–type Si (100) substrate at 800 °C by RF magnetron sputtering. X-ray diffraction pattern shows that the films are crystallized in monoclinic structure with C2 space group. The crystallite size and induced strain in the prepared films are measured by W-H plot. The cell parameters and texture coefficient of the films are calculated. The surface morphology of the films is examined by atomic force microscope. The study confirms the optimum level of calcium doping is 20 at. % in Bi site of BiMnO{sub 3} film, thesemore » findings pave the way for further research in the Ca modified BiMnO{sub 3} films towards device fabrication.« less

  18. Colossal magnetoresistance accompanied with magnetorelaxor behavior in phase-separated Ca1-xCexMnO3 thin films and CaMnO3/Ca0.92Ce0.08MnO3 superlattices

    NASA Astrophysics Data System (ADS)

    Xiang, P.-H.; Yamada, H.; Sawa, A.; Akoh, H.

    2010-03-01

    We report on the transport properties of electron-doped manganite Ca1-xCexMnO3 (CCMO, 0≤x≤0.08) films and superlattices composed of insulating layers CaMnO3 (CMO) and Ca0.92Ce0.08MnO3 (CCMO8), deposited on nearly lattice-matched NdAlO3 substrates. The CCMO (x =0.06 and 0.07) films show colossal magnetoresistance (CMR) accompanied with magnetorelaxor behavior, which can be ascribed to the phase separation of canted G-type antiferromagnetic metal and C-type antiferromagnetic insulator. The (CMO)m/(CCMO8)n superlattices with 4≤m, n ≤8 (unit cells) resemble the solid-solution CCMO (x =0.06 and 0.07) films in CMR and magnetorelaxor behavior, suggesting that the phase separation takes place in the superlattices. The CMR and magnetorelaxor behavior of the (CMO)m/(CCMO8)n superlattices strongly depend on the thicknesses of constituent CMO and CCMO8 layers. The origin of the phase separation in the superlattices is discussed in terms of the charge transfer and the phase competition at the interfaces.

  19. Fabrication and Properties of Cr2O3 and La0.7Sr0.3MnO3 Thin Film Heterostructures Integrated on Si(001)

    NASA Astrophysics Data System (ADS)

    Punugupati, Sandhyarani

    Spintronics that utilizes both the spin and charge degrees of freedom of an electron is emerged as an alternate memory technology to conventional CMOS electronics. Many proposed spintronic devices require multifunctional properties in a single material. The oxides Cr2O3 and La0.7Sr0.3MnO3 are such materials which exhibit unique physical properties at room temperature. The Cr2O3 is an antiferromagnetic and magnetoelectric material below its Neel temperature 307K. The La0.7Sr0.3MnO3 is a ferromagnetic half metal with a Curie temperature of 360K and exhibits colossal magnetoresistance. However, the reach of this spintronic technology into more device applications is possible only when these materials in epitaxial thin film form are integrated with Si(001) which is the mainstay substrate in semiconductor industry. The primary objective of this dissertation was to integrate epitaxial Cr2O3, La0.7Sr0.3MnO3 and Cr2O3/La0.7Sr0.3MnO3 thin film heterostructure on Si(001) and, study their physical properties to investigate structure-processing-property relationship in these heterostructures. The epitaxial integration of Cr2O3 thin films on Si(001) was done using epitaxial cubic yttria stabilized zirconia (c-YSZ) buffer layer by pulsed laser deposition. Detailed structural characterizations XRD (2theta and phi) and TEM confirm the epitaxial nature of the films. Though bulk Cr2O3 is antiferromagnetic along the c-axis, the in-plane magnetization measurements on Cr2O3(0001) thin films showed ferromagnetic behavior up to 400K. The thickness dependent magnetization together with oxygen annealing results suggested that the in-plane ferromagnetism in Cr2O3 was due to the oxygen related defects whose concentration is controlled by strain in the films. The out-of-plane magnetic measurements on Cr2O3(0001) films showed magnetic behavior indicative of antiferromagnetic nature. To verify whether ferromagnetism can be induced by strain in Cr 2O3 thin films with orientation other than (0001

  20. Multivalent Mn-doped TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Lin, C. Y. W.; Channei, D.; Koshy, P.; Nakaruk, A.; Sorrell, C. C.

    2012-07-01

    Thin films of TiO2 doped with Mn were deposited on F-doped SnO2-coated glass using spin coating. The concentration of the dopant was in the range 0-7 wt% Mn (metal basis). The films were examined in terms of the structural, chemical, and optical properties. Glancing angle X-ray diffraction data show that the films consisted of the anatase polymorph of TiO2, without any contaminant phases. The X-ray photoelectron spectroscopy data indicate the presence of Mn3+ and Mn4+ in the doped films as well as atomic disorder and associated structural distortion. Ultraviolet-visible spectrophotometry data show that the optical indirect band gap of the films decreased significantly with increasing manganese doping, from 3.32 eV for the undoped composition to 2.90 eV for that doped with 7 wt% Mn.

  1. Growth and electrical transport properties of La 0.7 Sr 0.3 MnO 3 thin films on Sr 2 IrO 4 single crystals

    DOE PAGES

    Moon, E. J.; May, A. F.; Shafer, P.; ...

    2017-04-20

    Here, we report the physical properties of La 0.7 Sr 0.3 MnO 3 thin films on Sr 2 IrO 4 single crystals. We also deposited the manganite films using oxide molecular beam epitaxy on flux-grown (001)-oriented iridate crystals. Temperature-dependent magnetotransport and x-ray magnetic circular dichroism measurements reveal the presence of a ferromagnetic metallic ground state in the films, consistent with films grown on SrTiO 3 and La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 . A parallel resistance model is used to separate conduction effects within the Sr 2 IrO 4 substrate and the La 0.7 Sr 0.3more » MnO 3 thin films, revealing that the measured resistance maximum does not correspond to the manganite Curie temperature but results from a convolution of properties of the near-insulating substrate and metallic film. Furthermore, the ability to grow and characterize epitaxial perovskites on Sr 2 IrO 4 crystals enables a new route for studying magnetism at oxide interfaces in the presence of strong spin-orbit interactions.« less

  2. Ultra-sharp oscillatory magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Boos, R.

    Our investigations of magneto-transport properties of La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} manganite thin films of reduced dimensions revealed dramatic changes in R(θ), the dependence of resistivity on the angle between the magnetic field direction and the current direction, and consequently in the anisotropic magneto-resistance. A regular oscillatory  sin{sup 2}θ form of R(θ) is replaced by a very sharp rectangular-shaped ones when the dimensions of the system become comparable to the size of the intrinsic electronic domains. We discuss possible mechanisms that could be responsible for these changes.

  3. Preparation of epitaxial TlBa2Ca2Cu3O9 high Tc thin films on LaAlO3 (100) substrates

    NASA Astrophysics Data System (ADS)

    Piehler, A.; Reschauer, N.; Spreitzer, U.; Ströbel, J. P.; Schönberger, R.; Renk, K. F.; Saemann-Ischenko, G.

    1994-09-01

    Epitaxial TlBa2Ca2Cu3O9 high Tc thin films were prepared on LaAlO3 (100) substrates by a combination of laser ablation and thermal evaporation of thallium oxide. X-ray diffraction patterns of θ-2θ scans showed that the films consisted of highly c axis oriented TlBa2Ca2Cu3O9. φ scan measurements revealed an epitaxial growth of the TlBa2Ca2Cu3O9 thin films on the LaAlO3 (100) substrates. Ac inductive measurements indicated the onset of superconductivity at 110 K. At 6 K, the critical current density was 4×106 A/cm2 in zero magnetic field and 6×105 A/cm2 at a magnetic field of 3 T parallel to the c axis.

  4. Structural, magnetic and electronic properties of pulsed-laser-deposition grown SrFeO3-δ thin films and SrFeO3-δ /La2/3Ca1/3MnO3 multilayers

    NASA Astrophysics Data System (ADS)

    Perret, E.; Sen, K.; Khmaladze, J.; Mallett, B. P. P.; Yazdi-Rizi, M.; Marsik, P.; Das, S.; Marozau, I.; Uribe-Laverde, M. A.; de Andrés Prada, R.; Strempfer, J.; Döbeli, M.; Biškup, N.; Varela, M.; Mathis, Y.-L.; Bernhard, C.

    2017-12-01

    We studied the structural, magnetic and electronic properties of SrFeO3-δ (SFO) thin films and SrFeO3-δ /La2/3 Ca1/3 MnO3 (LCMO) superlattices that have been grown with pulsed laser deposition (PLD) on La0.3 Sr0.7 Al0.65 Ta0.35 O3 (LSAT) substrates. X-ray reflectometry and scanning transmission electron microscopy (STEM) confirm the high structural quality of the films and flat and atomically sharp interfaces of the superlattices. The STEM data also reveal a difference in the interfacial layer stacking with a SrO layer at the LCMO/SFO and a LaO layer at the SFO/LCMO interfaces along the PLD growth direction. The x-ray diffraction (XRD) data suggest that the as grown SFO films and SFO/LCMO superlattices have an oxygen-deficient SrFeO3-δ structure with I4/ mmm space group symmetry (δ≤slant 0.2 ). Subsequent ozone annealed SFO films are consistent with an almost oxygen stoichiometric structure (δ ≈ 0 ). The electronic and magnetic properties of these SFO films are similar to the ones of corresponding single crystals. In particular, the as grown SrFeO3-δ films are insulating whereas the ozone annealed films are metallic. The magneto-resistance effects of the as grown SFO films have a similar magnitude as in the single crystals, but extend over a much wider temperature range. Last but not least, for the SFO/LCMO superlattices we observe a rather large exchange bias effect that varies as a function of the cooling field.

  5. Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

    NASA Technical Reports Server (NTRS)

    Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

    1993-01-01

    A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

  6. Magnetic and electronic properties of SrMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Mandal, Arup Kumar; Panchal, Gyanendra; Choudhary, R. J.; Phase, D. M.

    2018-05-01

    Single phase hexagonal bulk SrMnO3 (SMO) was prepared by solid state route and it was used for depositing thin films by pulsed laser deposition (PLD) technique on single crystalline (100) oriented SrTiO3 (STO) substrate. X-ray diffraction shows that the thin film is deposited in cubic SrMnO3 phase. From X-ray absorption at the Mn L edge we observed the mixed valency of Mn (Mn3+& Mn4+) due to strain induced by the lattice mismatching between SMO and STO. Due to this mixed valency of Mn ion in SMO film, the ferromagnetic nature is observed at lower temperature because of double exchange. After post annealing with very low oxygen partial pressure, magnetic and electronic property of SMO films are effectively modified.

  7. Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Keating, S.

    2016-04-14

    We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution ofmore » electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.« less

  8. Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

    NASA Astrophysics Data System (ADS)

    Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

    2007-02-01

    Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

  9. Effect of oxygen concentration on the magnetic properties of La2CoMnO6 thin films

    NASA Astrophysics Data System (ADS)

    Guo, H. Z.; Gupta, A.; Zhang, Jiandi; Varela, M.; Pennycook, S. J.

    2007-11-01

    The dependence of the magnetic properties on oxygen concentration in epitaxial La2CoMnO6 thin films deposited on (100)-oriented SrTiO3 substrates has been investigated by varying the oxygen background pressure during growth using pulsed laser deposition. Two distinct ferromagnetic (FM) phases are revealed, and the relative fraction varies with the oxygen concentration. The existence of oxygen vacancies induces the local vibronic Mn3+-O -Co3+ superexchange interactions in direct competition with the static FM Mn4+-O-Co2+ interactions. This results in the appearance of a new low temperature FM phase and suppression of the high-temperature FM phase, creating two distinct magnetic phase transitions.

  10. Resistance switching mechanism of La0.8Sr0.2MnO3-δ thin films

    NASA Astrophysics Data System (ADS)

    Luo, X. D.; Gao, R. L.; Fu, C. L.; Cai, W.; Chen, G.; Deng, X. L.; Zhang, H. R.; Sun, J. R.

    2016-02-01

    Effects of oxygen vacancies on the electrical transport properties of oxygen stoichiometric La0.8Sr0.2MnO3 and oxygen-deficient La0.8Sr0.2MnO3-δ films have been investigated. The result presents that the oxygen-deficient films annealed in vacuum show obvious increase of resistance and lattice parameter. With the sweeping voltage or temperature increasing, the resistance exhibits obvious bipolar switching effect, no forming process was needed. Oxygen deficiency in the annealed film leads to the formation of a structural disorder in the Mn-O-Mn conduction channel due to the accumulation of oxygen vacancies under high external electric field or temperatures and hence is believed to be responsible for the bipolar resistance switching effect and the enhanced resistivity compared with oxygen stoichiometric La0.8Sr0.2MnO3 film. These results may be important for practical applications in photoelectric or storage devices and point to a useful direction for other oxidizing materials.

  11. Effects of lattice deformation on magnetic properties of electron-doped La0.8Hf0.2MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Wu, Z. P.; Jiang, Y. C.; Gao, J.

    2013-05-01

    The lattice deformation effects on electric and magnetic properties of electron-doped La0.8Hf0.2MnO3 (LHMO) thin films have been systematically investigated. LHMO films with various thicknesses (15 nm, 40 nm, and 80 nm) were grown on (001) SrTiO3 and (001) LaAlO3 substrates, which induces in-plane tensile and compressive biaxial stress, respectively. The metal-insulator phase transition temperature (TP) and magnetoresistance (MR) effect show a strong dependence on film thickness. TP increases with a decrease in thickness and is enhanced as the lattice strain rises, regardless of whether it is tensile or compressive. The maximum MR ratio is suppressed by reduction of the film thickness. These anomalous phenomena may be attributed to the competition between the strain induced modification of the Mn-O bond length and the eg orbital stability.

  12. Effect of oxygen deposition pressure and temperature on the structure and properties of pulsed laser-deposited La0.67Ca0.33Mnfilms

    NASA Astrophysics Data System (ADS)

    Horwitz, James S.; Dorsey, Paul C.; Koon, N. C.; Rubinstein, M.; Byers, J. M.; Gillespie, D. J.; Osofsky, Michael S.; Harris, V. G.; Grabowski, K. S.; Knies, D. L.; Donovan, Edward P.; Treece, Randolph E.; Chrisey, Douglas B.

    1996-04-01

    The effect of substrate temperature and oxygen deposition pressure on the structure and properties of thin films of LaxCa1-xMnO(delta ) has been investigated. Thin films (approximately 1000 angstroms) of La0.67Ca0.33MnO(delta ) were deposited onto LaAlO3 (100) substrates by pulsed laser deposition at a substrate temperature of 600 and 700 degree(s)C. A series of films were grown on different oxygen pressures, between 15 and 400 mTorr, which systematically changed the oxygen concentrations in the films. As-deposited films exhibited an oriented orthorhombic structure. At low oxygen deposition pressures films were preferentially (202) oriented. At high pressures deposited films had a (040) preferred orientation. A 900 degree(s)C anneal in flowing oxygen of a film deposited at low oxygen pressure resulted in a decrease in the a lattice parameter and a change in the preferred orientation from (202) to (040). Vacuum annealing at 550 degree(s)C resulted in an increase in the a lattice parameter. The resistivity as a function of temperature showed a significant variation as a function of growth conditions. The peak in the resistivity curve (Tm) varied between 73 and 150 K depending upon the growth conditions. The activation energy associated with the semiconducting phase was approximately the same for all films (approximately 100 meV).

  13. Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T

    NASA Astrophysics Data System (ADS)

    Niu, Wei; Wang, Xuefeng; Gao, Ming; Xia, Zhengcai; Du, Jun; Nie, Yuefeng; Song, Fengqi; Xu, Yongbing; Zhang, Rong

    2017-05-01

    We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial La0.7Sr0.3MnO3 thin films were deposited by laser molecular beam epitaxy. High magnetic field magnetoresistance curves were fitted by the Brillouin function, which indicated the existence of magnetically polarized regions and the underlying hopping mechanism. The unsaturated magnetoconductance was the most striking finding observed in pulsed magnetic fields up to 60 T. These observations can deepen the fundamental understanding of the colossal magnetoresistance in manganites with strong correlation of transport properties and magnetic ordering.

  14. Tuning the Curie temperature of epitaxial Nd0.6Sr0.4MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Bhat, Shwetha G.; Kumar, P. S. Anil

    2018-02-01

    NdxSr1-xMnO3 (0.2 ≤ x ≤ 0.5) systems are widely studied in magnetism, popular for high colossal magnetoresistance and are ferromagnetic oxides with TC ranging from 200 K to 300 K. Recently, many of such compounds are re-visited for exploring the correlation of spin, charge and lattice degrees of freedom. Although, manganite thin films are the ideal candidates for studying the electron-correlation effects, the puzzle of obtaining a high quality epitaxial thin films of NdxSr1-xMnO3 are still unsolved contrary to its sister compound LaxSr1-xMnO3. Hence, in this study, we demonstrate the growth of best quality of Nd0.6Sr0.4MnO3 (NSMO) epitaxial thin films. This is evident from the TC and a sharp insulator-to-metal transition (IMT) coinciding at as high as ∼255 K against the bulk TC (∼270 K). It is the highest reported TC in Nd0.6Sr0.4MnO3 thin films to date. Moreover, as-deposited films with in situ oxygen annealing are not enough to relax the lattice of NSMO films due to the significant Jahn-Teller distortion in the film. With ex situ annealing processes alongside the various deposition and in situ annealing conditions, we have extensively studied the growth of epitaxial NSMO thin films on LaAlO3 (0 0 1) and SrTiO3 (0 0 1) to investigate the evolution of lattice and its one-to-one correspondence with the magnetism and the electrical properties of thin films. Accordingly, the enhanced magnetization, reduced resistivity and the higher TC and IMT of the NSMO films obtained from our extensive growth analysis looks promising for the future applications across the TC and IMT.

  15. Magnetotransport parameters of La0.67Ca0.33MnO3 films grown on neodymium gallate substrates

    NASA Astrophysics Data System (ADS)

    Boikov, Yu. A.; Volkov, M. P.

    2013-01-01

    Weakly mechanically stressed 40-nm-thick La0.67Ca0.33MnO3 films have been grown coherently on a (001)NdGaO3 substrate by laser evaporation. The electrical resistivity ρ of the La0.67Ca0.33MnO3 film reaches a maximum at a temperature T C ≈ 255 K. At temperatures below 0.6 T C, the temperature dependences of ρ are well approximated by the relation ρ = ρdef + C 1 T 2 + C 2 T 4.5, in which the first term on the right-hand side accounts for the contribution of structural defects to electrical resistivity, and the second and third terms stand for those of the electron-electron and electron-magnon interactions, respectively. The parameters ρdef ≈ 1 x 10-4 Ω cm and C 1 ≈ 7.7 × 10-9 Ω cm K-2 do not depend on temperature and magnetic field H. The coefficient C 2 decreases with increasing H to reach about 4.9 × 10-15 Ω cm K-4.5 at μ0 H = 14 T.

  16. Monodomain to polydomain transition in ferroelectric PbTiO3 thin films with La0.67Sr0.33MnO3 electrodes

    NASA Astrophysics Data System (ADS)

    Lichtensteiger, Céline; Dawber, Matthew; Stucki, Nicolas; Triscone, Jean-Marc; Hoffman, Jason; Yau, Jeng-Bang; Ahn, Charles H.; Despont, Laurent; Aebi, Philipp

    2007-01-01

    Finite size effects in ferroelectric thin films have been probed in a series of epitaxial perovskite c-axis oriented PbTiO3 films grown on thin La0.67Sr0.33MnO3 epitaxial electrodes. The film thickness ranges from 480 down to 28Å (seven unit cells). The evolution of the film tetragonality c /a, studied using high resolution x-ray diffraction measurements, shows first a decrease of c /a with decreasing film thickness followed by a recovery of c /a at small thicknesses. This recovery is accompanied by a change from a monodomain to a polydomain configuration of the polarization, as directly demonstrated by piezoresponse atomic force microscopy measurements.

  17. Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

    NASA Technical Reports Server (NTRS)

    Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

    1992-01-01

    The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

  18. Interfacial Ferromagnetism in LaNiO3/CaMnO3 Superlattices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Grutter, Alexander J.; Yang, Hao; Kirby, B. J.

    2013-08-01

    We observe interfacial ferromagnetism in superlattices of the paramagnetic metal LaNiO3 and the antiferromagnetic insulator CaMnO3. LaNiO3 exhibits a thickness dependent metal-insulator transition and we find the emergence of ferromagnetism to be coincident with the conducting state of LaNiO3. That is, only superlattices in which the LaNiO3 layers are metallic exhibit ferromagnetism. Using several magnetic probes, we have determined that the ferromagnetism arises in a single unit cell of CaMnO3 at the interface. Together these results suggest that ferromagnetism can be attributed to a double exchange interaction among Mn ions mediated by the adjacent itinerant metal.

  19. Fabrication and performance of a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O thin film detector

    NASA Astrophysics Data System (ADS)

    Zhou, Wei; Yin, Yiming; Yao, Niangjuan; Jiang, Lin; Qu, Yue; Wu, Jing; Gao, Y. Q.; Huang, Jingguo; Huang, Zhiming

    2018-01-01

    A thermal sensitive infrared and THz detector was fabricated by a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films. The Mn-Co-Ni-O material, as one type of transition metal oxides, has long been used as a candidate for thermal sensors or infrared detectors. The resistivity of a most important Mn-Co-Ni-O thin film, Mn1. 96Co0.96Ni0.48O4(MCN) , is about 200 Ω·cm at room temperature, which ranges about 2 orders larger than that of VOx detectors. Therefore, the thickness of a typical squared Mn-Co-Ni-O IR detector should be about 10 μm, which is too large for focal plane arrays applications. To reduce the resistivity of Mn-Co-Ni-O thin film, 1/6 of Co element was replaced by Cu. Meanwhile, a cover layer of MCN film was deposited onto the Mn-Co-Ni-Cu-O film to improve the long term stability. The detector fabricated by the double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films showed large response to blackbody and 170 GHz radiation. The NEP of the detector was estimated to be the order of 10-8 W/Hz0. 5. By applying thermal isolation structure and additional absorption materials, the detection performance can be largely improved by 1-2 orders according to numerical estimation. The double layered Mn-Co-Ni-O film detector shows great potentials in applications in large scale IR detection arrays, and broad-band imaging.

  20. Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

    NASA Astrophysics Data System (ADS)

    Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

    2016-08-01

    We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

  1. SHI irradiation effect on pure and Mn doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Khawal, H. A.; Raskar, N. D.; Dole, B. N.

    2017-05-01

    Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

  2. Room temperature optical anisotropy of a LaMnO 3 thin-film induced by ultra-short pulse laser

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Munkhbaatar, Purevdorj; Marton, Zsolt; Tsermaa, Bataarchuluun

    Ultra-short laser pulse induced optical anisotropy of LaMnO 3 thin films grown on SrTiO 3 substrates were observed by irradiation with a femto-second laser pulse with the fluence of less than 0.1 mJ/cm 2 at room temperature. The transmittance and reflectance showed different intensities for different polarization states of the probe pulse after pump pulse irradiation. The theoretical optical transmittance and re ectance that assumed an orbital ordering of the 3d eg electrons in Mn 3+ ions resulted in an anisotropic time dependent changes similar to those obtained from the experimental results, suggesting that the photo-induced optical anisotropy of LaMnOmore » 3 is a result of photo-induced symmetry breaking of the orbital ordering for an optically excited state.« less

  3. Dislocations Accelerate Oxygen Ion Diffusion in La 0.8Sr 0.2MnO 3 Epitaxial Thin Films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Navickas, Edvinas; Chen, Yan; Lu, Qiyang

    Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO 3 (LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO 3 and SrTiO 3 substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced bymore » dislocations, especially in the LSM films on LaAlO 3. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO 3. In conclusion, the diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk.« less

  4. Dislocations Accelerate Oxygen Ion Diffusion in La0.8Sr0.2MnO3 Epitaxial Thin Films

    PubMed Central

    2017-01-01

    Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO3 (LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO3 and SrTiO3 substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced by dislocations, especially in the LSM films on LaAlO3. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO3. The diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk. PMID:28981249

  5. Dislocations Accelerate Oxygen Ion Diffusion in La 0.8Sr 0.2MnO 3 Epitaxial Thin Films

    DOE PAGES

    Navickas, Edvinas; Chen, Yan; Lu, Qiyang; ...

    2017-10-05

    Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO 3 (LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO 3 and SrTiO 3 substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced bymore » dislocations, especially in the LSM films on LaAlO 3. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO 3. In conclusion, the diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk.« less

  6. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  7. Modulation of ultrafast laser-induced magnetization precession in BiFeO3-coated La0.67Sr0.33MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Wan, Qian; Jin, KuiJuan; Wang, JieSu; Yao, HongBao; Gu, JunXing; Guo, HaiZhong; Xu, XiuLai; Yang, GuoZhen

    2017-04-01

    The ultrafast laser-excited magnetization dynamics of ferromagnetic (FM) La0.67Sr0.33MnO3 (LSMO) thin films with BiFeO3 (BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique. Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect. The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films, which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.

  8. Phase shift of oscillatory magnetoresistance in a double-cross thin film structure of La0.3Pr0.4Ca0.3MnO3 via strain-engineered elongation of electronic domains

    NASA Astrophysics Data System (ADS)

    Alagoz, H. S.; Prasad, B.; Jeon, J.; Blamire, M. G.; Chow, K. H.; Jung, J.

    2018-02-01

    The subtle balance between the competing electronic phases in manganites due to complex interplay between spin, charge, and orbital degrees of freedom could allow one to modify the properties of electronically phase separated systems. In this paper, we show that the phase shift in the oscillatory magnetoresistance ρ (θ ) can be modified by engineering strain driven elongation of electronic domains in La0.3Pr0.4Ca0.3MnO3 (LPCMO) thin films. Strain-driven elongation of magnetic domains can produce different percolation paths and hence different anisotropic magnetoresistance responses. This tunability provides a unique control that is unattainable in conventional 3 d ferromagnetic metals and alloys.

  9. First-principles Studies of Ferroelectricity in BiMnO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Wang, Yun-Peng; Cheng, Hai-Ping

    The ferroelectricity in BiMnO3 thin films is a long-standing problem. We employed a first-principles density functional theory with inclusion of the local Hubbard Coulomb (U) and exchange (J) terms. The parameters U and J are optimized to reproduce the atomic structure and the energy gap of bulk C2/c BiMnO3. With these optimal U and J parameters, the calculated ferromagnetic Curie temperature and lattice dynamics properties agree with experiments. We then studied the ferroelectricity in few-layer BiMnO3 thin films on SrTiO3(001) substrates. Our calculations identified ferroelectricity in monolayer, bilayer and trilayer BiMnO3 thin films. We find that the energy barrier for 90° rotation of electric polarization is about 3 - 4 times larger than that of conventional ferroelectric materials. This work was supported by the US Department of Energy (DOE), Office of Basic Energy Sciences (BES), under Contract No. DE-FG02-02ER45995. Computations were done using the utilities of the National Energy Research Scientific Computing Center (NERSC).

  10. Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp; Yamaguchi, Akihiro; Sakuda, Atsushi

    2014-05-01

    Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueousmore » solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.« less

  11. Thin films of the Bi2Sr2Ca2Cu3O(x) superconductor

    NASA Technical Reports Server (NTRS)

    Mei, YU; Luo, H. L.; Hu, Roger

    1990-01-01

    Using RF sputtering technique, thin films of near single phase Bi2Sr2Ca2Cu3O(x) were successfully prepared on SrTiO3(100), MgO(100), and LaAlO3(012) substrates. Zero resistance of these films occurred in the range of 90-105 K.

  12. Probing non-collinear magnetism in Ca1-xSrxMn7O12 films by neutron scattering

    NASA Astrophysics Data System (ADS)

    Huon, Amanda; Grutter, Alexander; Kirby, Brian; Disseler, Steven; Borchers, Julie; Liu, Yaohua; Tian, Wei; Herklotz, Andreas; Lee, Ho Nyung; Fitzsimmons, Michael; May, Steven

    CaMn7O12 has been reported to be a single-phase multiferroic quadruple manganite that exhibits both ferroelectricity and helical magnetism below 90 K, but presently no experimental data from bulk or thin films have demonstrated coupling between these two ordering types. Herein, we synthesized epitaxial Ca1-xSrxMn7O12 thin films grown by oxide molecular beam epitaxy and pulsed laser deposition. We utilized neutrons to map out the non-collinear magnetic wavevectors as a function of temperature. To verify whether this coupling is present in our thin films we performed both magnetic and electric field studies. The results highlight the scientific opportunities in using chemical pressure and strain to modify non-collinear magnetism and better understand the link between ferroelectricity and helical magnetism. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Workforce Development for Teachers and Scientists, Office of Science Graduate Student Research (SCGSR) program. The SCGSR program is administered by the Oak Ridge Institute for Science and Education for the DOE under Contract Number DE-SC0014664.

  13. Effect of chemical pressure on the electronic phase transition in Ca 1-x Sr x Mn 7 O 12 films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huon, A.; Lee, D.; Herklotz, A.

    Here, we demonstrate how chemical pressure affects the structural and electronic phase transitions of the quadruple perovskite CaMn 7O 12 by Sr doping, a compound that exhibits a charge-ordering transition above room temperature making it a candidate for oxide electronics. We also have synthesized Ca 1-xSr xMn 7O 12 (0 ≤ x ≤ 0.6) thin films by oxide molecular beam epitaxy on (LaAlO 3) 0.3(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) substrates. The substitution of Sr for Ca results in a linear expansion of the lattice, as revealed by X-ray diffraction. Temperature-dependent resistivity and X-ray diffraction measurements are used to demonstratemore » that the coupled charge-ordering and structural phase transitions can be tuned with Sr doping. An increase in Sr concentration acts to decrease the phase transition temperature (T*) from 426 K at x = 0 to 385 K at x = 0.6. Furthemore, the presence of a tunable electronic phase transition, above room temperature, points to the potential applicability of Ca 1-xSr xMn 7O 12 in sensors or oxide electronics, for example, via charge doping.« less

  14. Effect of chemical pressure on the electronic phase transition in Ca 1-x Sr x Mn 7 O 12 films

    DOE PAGES

    Huon, A.; Lee, D.; Herklotz, A.; ...

    2017-09-18

    Here, we demonstrate how chemical pressure affects the structural and electronic phase transitions of the quadruple perovskite CaMn 7O 12 by Sr doping, a compound that exhibits a charge-ordering transition above room temperature making it a candidate for oxide electronics. We also have synthesized Ca 1-xSr xMn 7O 12 (0 ≤ x ≤ 0.6) thin films by oxide molecular beam epitaxy on (LaAlO 3) 0.3(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) substrates. The substitution of Sr for Ca results in a linear expansion of the lattice, as revealed by X-ray diffraction. Temperature-dependent resistivity and X-ray diffraction measurements are used to demonstratemore » that the coupled charge-ordering and structural phase transitions can be tuned with Sr doping. An increase in Sr concentration acts to decrease the phase transition temperature (T*) from 426 K at x = 0 to 385 K at x = 0.6. Furthemore, the presence of a tunable electronic phase transition, above room temperature, points to the potential applicability of Ca 1-xSr xMn 7O 12 in sensors or oxide electronics, for example, via charge doping.« less

  15. Synthesis and characterization of Ca-doped LaMnAsO

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Yong; Straszheim, Warren E.; Das, Pinaki

    Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La 3+ site by Ca 2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La 1–xCa x)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(x nom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of bothmore » the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, T N = 355 ± 5 K.« less

  16. Synthesis and characterization of Ca-doped LaMnAsO

    DOE PAGES

    Liu, Yong; Straszheim, Warren E.; Das, Pinaki; ...

    2018-05-18

    Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La 3+ site by Ca 2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La 1–xCa x)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(x nom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of bothmore » the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, T N = 355 ± 5 K.« less

  17. Influence of an O2 background gas on the composition and kinetic energies of species in laser induced La0.4Ca0.6MnO3 plasmas

    NASA Astrophysics Data System (ADS)

    Chen, Jikun; Stender, Dieter; Bator, Matthias; Schneider, Christof W.; Lippert, Thomas; Wokaun, Alexander

    2013-08-01

    Oxygen is one of the most commonly used background gases for pulsed laser deposition of oxide thin films. In this work the properties of a 308 nm laser-induced La0.4Ca0.6MnO3 plasma were analyzed using a quadrupole mass spectrometer combined with an energy analyzer, to investigate the interaction between the various plasma species and the background gas. The composition and kinetic energies of the plasma species were compared in vacuum and an O2 background gas at different pressures. It has been observed that the O2 background gas decreases the kinetic energy of the positively charged atomic plasma species. In addition, the interaction with the O2 background gas causes the generation of positive diatomic oxide species of LaO+, CaO+ and MnO+. The amount of negatively charged diatomic or tri-atomic oxide species decreases in the O2 background compared to vacuum, while the amount of O2- increases strongly.

  18. Preferential orientation relationships in Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lacotte, M.; David, A.; Prellier, W., E-mail: wilfrid.prellier@ensicaen.fr

    2015-07-28

    A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr{sub 2}TiO{sub 4} substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001]{sub film} ∥ [100][001]{sub substrate}, or OR1) accounted formore » approximately 30% of each film. The OR that accounted for 60% of each film ([100][001]{sub film} ∥ [100][010]{sub substrate}, or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth.« less

  19. Room temperature multiferroic properties of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Raghavan, C.M.; Kim, H.J.; Kim, J.W.

    2013-11-15

    Graphical abstract: - Highlights: • Chemical solution deposition of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}–NiFe{sub 2}O{sub 4} double layered thin film. • Studies on structural, electrical and multiferroic properties. • NiFe{sub 2}O{sub 4} acts as both resistive buffer layer and magnetic source. - Abstract: (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film was prepared on a Pt(111)/Ti/SiO{sub 2}/Si(100) substrate by a chemical solution deposition method. X-ray diffraction and Raman scattering spectroscopy studies confirmed the formation of the distorted rhombohedral perovskite and the inverse spinel cubic structures for the (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4}more » double layered thin film. The (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film exhibited well saturated ferromagnetic (2 M{sub r} of 18.1 emu/cm{sup 3} and 2H{sub c} of 0.32 kOe at 20 kOe) and ferroelectric (2P{sub r} of 60 μC/cm{sup 2} and 2E{sub c} of 813 kV/cm at 866 kV/cm) hysteresis loops with low order of leakage current density (4.5 × 10{sup −6} A/cm{sup 2} at an applied electric field of 100 kV/cm), which suggest the ferroelectric and ferromagnetic multi-layers applications in real devices.« less

  20. Possible origin of photoconductivity in La0.7Ca0.3MnO3

    NASA Astrophysics Data System (ADS)

    Sagdeo, P. R.; Choudhary, R. J.; Phase, D. M.

    2010-01-01

    The effect of photon energy on the density of states near Fermi level of pulsed laser deposited La0.7Ca0.3MnO3 thin film has been studied to investigate the possible origin of change in the conductivity of these manganites upon photon exposure. For this purpose the photoelectron spectroscopy measurements were carried out using CSR beamline (BL-2) on Indus-1 synchrotron radiation source. The valance band spectra were measured at room temperature with photon energy ranging from 40 to 60 eV. We could see huge change in the density of states near Fermi level and this change is observed to be highest at 56 eV which is due to the resonance between Mn 3p to Mn 3d level. Our results suggest that the probability of electron transfer from deep Mn 3p level to Mn 3d-eg level is higher than that of Mn 3d-t2g level. It appears that this transfer of electron from deep Mn level to Mn 3d-eg level not only modifies the density of state near Fermi level but also changes the mobility of electrons by modifying the electron lattice coupling due to presence of Mn+3 Jahn-Teller ion.

  1. Plasmon Enhancement of Photoinduced Resistivity Changes in Bi1-xCaxMnO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Smolyaninova, Vera; Talanova, E.; Kolagani, Rajeswari; Yong, G.; Kennedy, R.; Steger, M.; Wall, K.

    2007-03-01

    Doped rare-earth manganese oxides (manganites) exhibit a wide variety of physical phenomena due to complex interplay of electronic, magnetic, orbital, and structural degrees of freedom and their sensitivity to external fields. A photoinduced insulator to conductor transition in charge-ordered manganites is especially interesting from the point of view of creating photonic devices. Thin films of Bi0.4Ca0.6MnO3 exhibit large photoinduced resistivity changes associated with melting of the charge ordering by visible light [1]. We have found a considerable increase of the photoinduced resistivity changes in the Bi0.4Ca0.6MnO3 thin film after depositing metal nanoparticles on the surface. This increase can be explained by enhancement of local electromagnetic field in the vicinity of the gold nanoparticle due to the plasmon resonance. The changes in lifetime of the photoinduced state will be reported, and the possible origin of these effects will be discussed. [1] V. N. Smolyaninova at al., Appl. Phys. Lett. 86, 071922 (2005).

  2. Hydrothermal synthesis of MnO2 thin film for supercapacitor application

    NASA Astrophysics Data System (ADS)

    Tarwate, Soni B.; Wahule, Swati S.; Gattu, Ketan P.; Ghule, Anil V.; Sharma, Ramphal

    2018-05-01

    MnO2 thin films were directly grown on stainless steel mesh via a facile hydrothermal method. The structural properties revealed the formation of delta MnO2. The capacitive performance of the as-obtained MnO2 electrode was evaluated by cyclic voltammetry (CV) and galvanostatic charge-discharge measurements. The synthesized electrode showed a high specific capacitance of 321 F g-1 at 5 A g-1. The excellent electrochemical performance identifies the MnO2 as a promising electrode material for next-generation energy storage devices.

  3. Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

    NASA Astrophysics Data System (ADS)

    Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

    2018-05-01

    Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

  4. Synthesis and characterization of Ca-doped LaMnAsO

    NASA Astrophysics Data System (ADS)

    Liu, Yong; Straszheim, Warren E.; Das, Pinaki; Islam, Farhan; Heitmann, Thomas W.; McQueeney, Robert J.; Vaknin, David

    2018-05-01

    We report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3 + site by Ca2 +. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1 -xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤0.01 . Magnetic susceptibility of the parent and the x =0.002 (xnom=0.04 ) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P 4 /n m m ) structure upon doping and the antiferromagnetic ordering temperature, TN=355 ±5 K.

  5. Synthesis and characterization of electron doped La{sub 0.85}Te{sub 0.15}MnO{sub 3} thin film grown on LaAlO{sub 3} substrate by pulsed laser deposition technique

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bhat, Irshad, E-mail: bhat.amu85@gmail.com; Husain, Shahid; Patil, S. I.

    2015-06-24

    We report the structural, morphological and magneto-transport properties of electron doped La{sub 0.85}Te{sub 0.15}MnO{sub 3} (LTMO) thin film grown on (001) LaAlO{sub 3} single crystal substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) results confirm that the film has good crystalline quality, single phase, and c-axis orientation. The atomic force microscopy (AFM) results have revealed that the film consists of grains with the average size in a range of 20–30 nm and root-mean square (rms) roughness of 0.27nm. The resistivity versus temperature measurement exhibits an insulator to metal transition (MIT). We have noticed a huge value of magnetoresistance (∼93%)more » close to MIT in presence of 8T field. X-ray photoemission spectroscopy confirms the electron doping and suggests that Te ions could be in the Te{sup 4+} state, while the Mn ions stay in the Mn{sup 2+} and Mn{sup 3+} valence state.« less

  6. Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

    NASA Astrophysics Data System (ADS)

    Belkhedkar, M. R.; Ubale, A. U.

    2018-05-01

    Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

  7. Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

    NASA Astrophysics Data System (ADS)

    Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

    2017-08-01

    In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

  8. Different magnetic origins of (Mn, Fe)-codoped ZnO powders and thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fan, Jiuping; Jiang, Fengxian; Quan, Zhiyong

    2012-11-15

    Graphical abstract: The effects of the sample forms, fabricated methods, and process conditions on the structural and magnetic properties of (Mn, Fe)-codoped ZnO powders and films were systematically studied. The origins of ferromagnetism in the vacuum-annealed powder and PLD-deposited film are different. The former originates from the impurities of magnetic clusters, whereas the latter comes from the almost homogenous phase. Highlights: ► The magnetic natures of Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powders and thin films come from different origins. ► The ferromagnetism of the powder is mainly from the contribution of magnetic clusters. ► Whereas the ferromagnetic behavior of the filmmore » comes from the almost homogenous phase. -- Abstract: The structural and magnetic properties of (Mn, Fe)-codoped ZnO powders as well as thin films were investigated. The X-ray diffraction and magnetic measurements indicated that the higher sintering temperature facilitates more Mn and Fe incorporation into ZnO. Magnetic measurements indicated that the powder sintered in air at 800 °C showed paramagnetic, but it exhibited obvious room temperature ferromagnetism after vacuum annealing at 600 °C. The results revealed that magnetic clusters were the major contributors to the observed ferromagnetism in vacuum-annealed Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powder. Interestingly, the room temperature ferromagnetism was also observed in the Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O film deposited via pulsed laser deposition from the air-sintered paramagnetic target, but the secondary phases in the film were not detected from X-ray diffraction, transmission electron microscopy, and zero-field cooling and field cooling. Apparently, the magnetic natures of powders and films come from different origins.« less

  9. Spray deposited MnFe2O4 thin films for detection of ethanol and acetone vapors

    NASA Astrophysics Data System (ADS)

    Nagarajan, V.; Thayumanavan, A.

    2018-01-01

    Spinel MnFe2O4 films were synthesized with the help of spray pyrolysis technique. The morphology study shows fine crushed sand grain morphology of the film. The structural investigation verifies the polycrystalline nature of prepared MnFe2O4 films, which possess the spinel structure. Crystalline size is found to be around 23.5 nm-37.4 nm morphology analyses. Energy dispersive spectroscopy validates the presence of oxygen, iron and manganese in MnFe2O4 film. The prepared MnFe2O4 film is extremely sensitive towards ethanol molecules at 300 K. The electrical resistance of MnFe2O4 thin film decreases quickly when ethanol and acetone vapor molecules are adsorbed on base material. The synthesized MnFe2O4 film is also highly sensitive towards acetone molecules at ambient temperature. The selectivity, sensing response, stability and recovery time of MnFe2O4 film towards acetone and ethanol detection are analyzed in the present work.

  10. Interplay between current driven ferromagnetism in charge ordered antiferromagnetic Pr0.5Ca0.5MnO3 and superconducting YBa2Cu3O7-δ thin film multilayer

    NASA Astrophysics Data System (ADS)

    Baisnab, Dipak Kumar; Sardar, Manas; Amaladass, E. P.; Vaidhyanathan, L. S.; Baskaran, R.

    2018-07-01

    Thin film multilayer heterostructure of alternate YBa2Cu3O7-δ (YBCO) and Pr0.5Ca0.5MnO3 (PCMO) with thickness of each layer ∼60 nm has been deposited on (100) oriented SrTiO3 substrate by Pulsed Laser Deposition technique. A half portion of the base YBCO layer was masked in situ using mechanical shadow mask and in the remaining half portion, five alternate layers of PCMO and YBCO thin films were deposited. Magnetoresistance measurements were carried out under externally applied magnetic field and injection current. A noticeable damped oscillation of the superconducting transition temperature (TC) of this multilayer with respect to magnetic field is seen. Curiously, the field at which the first minimum in TC occurs, decreases as an injection current is driven perpendicular/parallel to the multilayers. Both these phenomena indicate that ferromagnetic correlation can be induced in antiferromagnetic PCMO thin films by (1) external magnetic field, or (2) injection current. While (1) is well researched, our study indicates that ferromagnetism can be induced by small amount of current in PCMO thin films. This unusual behavior points towards the strongly correlated nature of electrons in PCMO.

  11. The Influence of Layer Thickness-Ratio on Magnetoresistance in La2/3Ca1/3MnO3/La1/3Ca2/3MnO3 Exchange Biased System

    NASA Astrophysics Data System (ADS)

    Gomez, Maria Elena; Milena Diez, Sandra; Cuartas, Lina Maria; Marin, Lorena; Prieto, Pedro

    2012-02-01

    Isothermal magnetic field dependence of the resistance in La2/3Ca1/3MnO3 (F-LCMO)/ La1/3Ca2/3MnO3(AF-LCMO) bilayer and AF-LCMO/F-LCMO/AF-LCMO trilayer at temperatures below N'eel temperature of the antiferromagnetic layer were carried out to study the thickness layers influence on magneto transport properties. We grew multilayers using a high oxygen pressure sputtering technique. We systematically varied the thickness of the F-LCMO layer, tF, maintaining constant the thickness of the AF-LCMO layer, tAF. We studied the influence of the thickness ratio tF/tAF on the ZFC and FC magnetoresistance (MR) loops. HFC was varied from 100 Oe to 400 Oe. We found that MR has hysteretic behavior as observed in [La2/3Ca1/3MnO3/La1/3Ca2/3MnO3]N superlattices, where MR increases with the increasing field from H=0 to a maximum and then it decreases continuously. The position and magnitude of the maximum is not symmetric with respect to the axis H=0 for both FC and ZFC loops. We found that magnetoresistance behavior of the bilayer and trilayer is thickness-ratio dependent for both ZFC and FC loops.

  12. Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology.

    PubMed

    Lo Nigro, Raffaella; Malandrino, Graziella; Toro, Roberta G; Losurdo, Maria; Bruno, Giovanni; Fragalà, Ignazio L

    2005-10-12

    CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM, and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (epsilon2). Looking at the epsilon2 curves, it can be seen that by increasing the film structural order, a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films.

  13. Substrate effect on the magnetic microstructure of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films studied by magnetic force microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Desfeux, R.; Bailleul, S.; Da Costa, A.

    2001-06-04

    Colossal magnetoresistive La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films have been grown under tensile strains on (100)-SrTiO{sub 3} substrates and compressive strains on (100)-LaAlO{sub 3} and (110)-NdGaO{sub 3} substrates by pulsed laser deposition. Using magnetic force microscopy (MFM), a {open_quotes}feather-like{close_quotes} magnetic pattern, characteristic of films with an in-plane magnetization, is observed for films deposited on both SrTiO{sub 3} and NdGaO{sub 3} while a {open_quotes}bubble{close_quotes} magnetic pattern, typical of films with an out-of-plane magnetization, is recorded for LaAlO{sub 3}. We show that the shape of the magnetic pattern imaged by MFM is fully correlated to the easy direction of the magnetization inmore » the film. {copyright} 2001 American Institute of Physics.« less

  14. Strain-Induced Ferromagnetism in Antiferromagnetic LuMnO3 Thin Films

    NASA Astrophysics Data System (ADS)

    White, J. S.; Bator, M.; Hu, Y.; Luetkens, H.; Stahn, J.; Capelli, S.; Das, S.; Döbeli, M.; Lippert, Th.; Malik, V. K.; Martynczuk, J.; Wokaun, A.; Kenzelmann, M.; Niedermayer, Ch.; Schneider, C. W.

    2013-07-01

    Single phase and strained LuMnO3 thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1μB), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic order are coupled via an exchange field, therefore demonstrating strained rare-earth manganite thin films as promising candidate systems for new multifunctional devices.

  15. Role of polar compensation in interfacial ferromagnetism of LaNiO3/CaMnO3 superlattices

    NASA Astrophysics Data System (ADS)

    Flint, C. L.; Jang, H.; Lee, J.-S.; N'Diaye, A. T.; Shafer, P.; Arenholz, E.; Suzuki, Y.

    2017-07-01

    Polar compensation can play an important role in the determination of interfacial electronic and magnetic properties in oxide heterostructures. Using x-ray absorption spectroscopy, x-ray magnetic circular dichroism, bulk magnetometry, and transport measurements, we find that interfacial charge redistribution via polar compensation is essential for explaining the evolution of interfacial ferromagnetism in LaNiO3/CaMnO3 superlattices as a function of LaNiO3 layer thickness. In insulating superlattices (four unit cells or less of LaNiO3), magnetism is dominated by Ni-Mn superexchange, while itinerant electron-based Mn-Mn double exchange plays a role in thicker metallic superlattices. X-ray magnetic circular dichroism and resonant x-ray scattering show that Ni-Mn superexchange contributes to the magnetization even in metallic superlattices. This Ni-Mn superexchange interaction can be explained in terms of polar compensation at the LaNiO3-CaMnO3 interface. These results highlight the different mechanisms responsible for interfacial ferromagnetism and the importance of understanding compensation due to polar mismatch at oxide-based interfaces when engineering magnetic properties.

  16. Restoring the magnetism of ultrathin LaMn O3 films by surface symmetry engineering

    NASA Astrophysics Data System (ADS)

    Peng, J. J.; Song, C.; Li, F.; Gu, Y. D.; Wang, G. Y.; Pan, F.

    2016-12-01

    The frustration of magnetization and conductivity properties of ultrathin manganite is detrimental to their device performance, preventing their scaling down process. Here we demonstrate that the magnetism of ultrathin LaMn O3 films can be restored by a SrTi O3 capping layer, which engineers the surface from a symmetry breaking induced out-of-plane orbital occupancy to the recovered in-plane orbital occupancy. The stabilized in-plane orbital occupancy would strengthen the intralayer double exchange and thus recovers the robust magnetism. This method is proved to be effective for films as thin as 2 unit cells, greatly shrinking the critical thickness of 6 unit cells for ferromagnetic LaMn O3 as demonstrated previously [Wang et al., Science 349, 716 (2015), 10.1126/science.aaa5198]. The achievement made in this work opens up new perspectives to an active control of surface states and thereby tailors the surface functional properties of transition metal oxides.

  17. Growth and magnetic properties of multiferroic LaxBi1-xMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Gajek, M.; Bibes, M.; Wyczisk, F.; Varela, M.; Fontcuberta, J.; Barthélémy, A.

    2007-05-01

    A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

  18. Nanoporous Ca3Co4O9 Thin Films for Transferable Thermoelectrics

    PubMed Central

    2018-01-01

    The development of high-performance and transferable thin-film thermoelectric materials is important for low-power applications, e.g., to power wearable electronics, and for on-chip cooling. Nanoporous films offer an opportunity to improve thermoelectric performance by selectively scattering phonons without affecting electronic transport. Here, we report the growth of nanoporous Ca3Co4O9 thin films by a sequential sputtering-annealing method. Ca3Co4O9 is promising for its high Seebeck coefficient and good electrical conductivity and important for its nontoxicity, low cost, and abundance of its constituent raw materials. To grow nanoporous films, multilayered CaO/CoO films were deposited on sapphire and mica substrates by rf-magnetron reactive sputtering from elemental Ca and Co targets, followed by annealing at 700 °C to form the final phase of Ca3Co4O9. This phase transformation is accompanied by a volume contraction causing formation of nanopores in the film. The thermoelectric propoperties of the nanoporous Ca3Co4O9 films can be altered by controlling the porosity. The lowest electrical resistivity is ∼7 mΩ cm, yielding a power factor of 2.32 × 10–4 Wm–1K–2 near room temperature. Furthermore, the films are transferable from the primary mica substrates to other arbitrary polymer platforms by simple dry transfer, which opens an opportunity of low-temperature use these materials. PMID:29905306

  19. Perovskite-based heterostructures integrating ferromagnetic-insulating La0.1Bi0.9MnO3

    NASA Astrophysics Data System (ADS)

    Gajek, M.; Bibes, M.; Barthélémy, A.; Varela, M.; Fontcuberta, J.

    2005-05-01

    We report on the growth of thin films and heterostructures of the ferromagnetic-insulating perovskite La0.1Bi0.9MnO3. We show that the La0.1Bi0.9MnO3 perovskite grows single phased, epitaxially, and with a single out-of-plane orientation either on SrTiO3 substrates or onto strained La2/3Sr1/3MnO3 and SrRuO3 ferromagnetic-metallic buffer layers. We discuss the magnetic properties of the La0.1Bi0.9MnO3 films and heterostructures in view of their possible potential as magnetoelectric or spin-dependent tunneling devices.

  20. Magnetocaloric effect study of Pr0.67Ca0.33MnO3-La0.67Sr0.33MnO3 nanocomposite

    NASA Astrophysics Data System (ADS)

    Das, Kalipada; Roy Chowdhury, R.; Midda, S.; Sen, Pintu; Das, I.

    2018-03-01

    The present study involves investigaton of magnetocaloric effect of Pr0.67Ca0.33MnO3-La0.67Sr0.33MnO3 nanocomposite materials above room temperature. From application point of view in magnetic refrigeration our study highlights the enhancement of operating temperature region compared to the well known La0.67Sr0.33MnO3 refrigerant material above room temperature. Comparison has also been made with the magnetocaloric properties of La0.67Sr0.33MnO3 nanomaterials. The modification of the magnetocaloric entropy changes (broadening of the temperature dependent magnetic entropy change) is addressed due to the effect of the gradual melting of antiferromagnetic charge ordered state of the Pr0.67Ca0.33MnO3 nanoparticles in such nanocomposite materials.

  1. The structure and magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film

    NASA Astrophysics Data System (ADS)

    Huang, Yuanqi; Chen, Zhengwei; Zhang, Xiao; Wang, Xiaolong; Zhi, Yusong; Wu, Zhenping; Tang, Weihua

    2018-05-01

    High quality epitaxial single phase (Ga0.96Mn0.04)2O3 and Ga2O3 thin films have been prepared on sapphire substrates by using laser molecular beam epitaxy (L-MBE). X-ray diffraction results indicate that the thin films have the monoclinic structure with a ≤ft( {\\bar 201} \\right) preferable orientation. Room temperature (RT) ferromagnetism appears and the magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film are enhanced compared with our previous works. Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films. The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films. Project supported by the National Natural Science Foundation of China (Nos. 11404029, 51572033, 51172208) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT).

  2. Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

    NASA Technical Reports Server (NTRS)

    Grabow, B. E.; Sova, R. M.; Boone, B. G.; Moorjani, K.; Kim, B. F.; Bohandy, J.; Adrian, F.; Green, W. J.

    1990-01-01

    Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation, and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

  3. Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

    NASA Technical Reports Server (NTRS)

    Grabow, B. E.; Sova, R. M.; Boone, B. G.; Moorjani, K.; Kim, B. F.; Bohandy, J.; Adrian, F.; Green, W. J.

    1991-01-01

    Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching, and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation; and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

  4. Temperature dependent infrared nano-imaging of La0.67Sr0.33MnO3 thin film

    NASA Astrophysics Data System (ADS)

    Xu, Peng; Huffman, T. J.; Hae Kwak, In; Biswas, Amlan; Qazilbash, M. M.

    2018-01-01

    We investigate the temperature dependence of infrared properties at nanometer length scales in La0.67Sr0.33MnO3 (LSMO) thin film with a thickness of 47 unit cells grown on SrTiO3 substrate. The infrared nano-imaging experiments were performed using a near-field optical microscope in conjunction with a variable temperature heating stage. The near-field infrared data is consistent with the bulk of the LSMO film undergoing the thermally-driven non-percolative second-order transition from a metallic, ferromagnetic phase to an insulating, paramagnetic phase. We find persistent infrared contrast on the nanoscale that is independent of temperature and which we attribute to two novel phases with different conductivities coexisting in the vicinity of the film-substrate interface. These two coexisting phases at the film-substrate interface do not undergo the metal-insulator transition (MIT) and hence are different from the metallic, ferromagnetic and insulating, paramagnetic phases in the bulk of the film. At temperatures approaching the nominal MIT temperature, repeated scans of the same microscopic area at constant temperature reveal bimodal fluctuation of the near-field infrared amplitude. We interpret this phenomenon as slow, critical fluctuations of the conductivity in the bulk of the LSMO film.

  5. Nanostructural Tailoring to Induce Flexibility in Thermoelectric Ca3Co4O9 Thin Films

    PubMed Central

    2017-01-01

    Because of their inherent rigidity and brittleness, inorganic materials have seen limited use in flexible thermoelectric applications. On the other hand, for high output power density and stability, the use of inorganic materials is required. Here, we demonstrate a concept of fully inorganic flexible thermoelectric thin films with Ca3Co4O9-on-mica. Ca3Co4O9 is promising not only because of its high Seebeck coefficient and good electrical conductivity but also because of the abundance, low cost, and nontoxicity of its constituent raw materials. We show a promising nanostructural tailoring approach to induce flexibility in inorganic thin-film materials, achieving flexibility in nanostructured Ca3Co4O9 thin films. The films were grown by thermally induced phase transformation from CaO–CoO thin films deposited by reactive rf-magnetron cosputtering from metallic targets of Ca and Co to the final phase of Ca3Co4O9 on a mica substrate. The pattern of nanostructural evolution during the solid-state phase transformation is determined by the surface energy and strain energy contributions, whereas different distributions of CaO and CoO phases in the as-deposited films promote different nanostructuring during the phase transformation. Another interesting fact is that the Ca3Co4O9 film is transferable onto an arbitrary flexible platform from the parent mica substrate by etch-free dry transfer. The highest thermoelectric power factor obtained is above 1 × 10–4 W m–1 K–2 in a wide temperature range, thus showing low-temperature applicability of this class of materials. PMID:28699345

  6. Thouless length and valley degeneracy factor of ZnMnO thin films with anisotropic, highly conductive surface layers

    NASA Astrophysics Data System (ADS)

    Vegesna, Sahitya V.; Bürger, Danilo; Patra, Rajkumar; Abendroth, Barbara; Skorupa, Ilona; Schmidt, Oliver G.; Schmidt, Heidemarie

    2017-06-01

    Isothermal magnetoresistance (MR) of n-type conducting Zn1-xMnxO thin films on a sapphire substrate with a Mn content of 5 at. % has been studied in in-plane and out-of-plane magnetic fields up to 6 T in the temperature range of 5 K to 300 K. During pulsed laser deposition of the ZnMnO thin films, we controlled the thickness and roughness of a highly conductive ZnMnO surface layer. The measured MR has been modeled with constant s-d exchange (0.2 eV in ZnMnO) and electron spin (S = 5/2 for Mn2+) for samples with a single two dimensional (2D) ZnMnO layer, a single three dimensional (3D) ZnMnO layer, or a 2D and 3D (2D + 3D) ZnMnO layer in parallel. The temperature dependence of modeled Thouless length LTh (LTh ˜ T-0.5) is in good agreement with the theory [Andrearczyk et al., Phys. Rev. B 72, 121309(R) (2005)]. The superimposed positive and negative MR model for ZnCoO thin films [Xu et al., Phys. Rev. B 76, 134417 (2007)] has been extended in order to account for the increase in the density of states close to the Fermi level of n-ZnMnO due to substitutional Mn2+ ions and their effect on the negative MR in ZnMnO.

  7. Lattice structure and magnetization of LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Rata, A. D.; Herklotz, A.; Schultz, L.; Dörr, K.

    2010-07-01

    We investigate the structure and magnetic properties of thin films of the LaCoO3 compound. Thin films are deposited by pulsed laser deposition on various substrates in order to tune the strain from compressive to tensile. Single-phase (001) oriented LaCoO3 layers were grown on all substrates despite large misfits. The tetragonal distortion of the films covers a wide range from -2% to 2.8%. Our LaCoO3 films are ferromagnetic with Curie temperature around 85 K, contrary to the bulk. The total magnetic moment is below 1 μ B /Co3+, a value relatively small for an exited spin-state of the Co3+ ions, but comparable to values reported in literature. A correlation of strain states and magnetic moment of Co3+ ions in LaCoO3 thin films is observed.

  8. Temperature dependent dielectric behavior of sol-gel grown Y0.95Ca0.05MnO3/Si junction

    NASA Astrophysics Data System (ADS)

    Dhruv, Davit; Joshi, Zalak; Solanki, Sapana; Sagapariya, Khushal; Makwana, Pratima; Kansara, S. B.; Joshi, A. D.; Pandya, D. D.; Solanki, P. S.; Shah, N. A.

    2017-05-01

    We have successfully fabricated divalent doped Y0.95Ca0.05MnO3 film on (100) single crystalline n-type Si substrate by spin coating assisted chemical solution deposition technique. The X-ray diffraction (XRD) pattern of thin film depicts that the film has (h00) directional growth on substrate. Thin film possesses -1.4% compressive strain at the interface level and thin film thickness is found to be ˜ 78nm. Dielectric property of film has been studied by Agilent LCR meter from 100Hz to 2MHz applied field frequency at temperatures 150 to 300K. Real dielectric permittivity decreases and imaginary dielectric permittivity increases with increasing applied frequency. Furthermore, at low temperatures, higher dielectric is observed in all the frequency range studied and it decreases with increasing temperature due to thermal excitation induced increased charge carrier movements across the film lattice. The relaxation mechanism of Y0.95Ca0.05MnO3 film has been understood through cole-cole plots.

  9. Interfacial magnetism in CaRuO3/CaMnO3 superlattices grown on (001) SrTiO3

    NASA Astrophysics Data System (ADS)

    He, C.; Zhai, X.; Mehta, V. V.; Wong, F. J.; Suzuki, Y.

    2011-04-01

    We have studied epitaxially grown superlattices of CaRuO3/CaMnO3 as well as an alloy film of CaMn0.5Ru0.5O3 on (001) SrTiO3 substrates. In contrast to previous experiments, we have studied CRO/CMO superlattices with a constant CRO thickness and variable CMO thickness. All superlattices exhibit Curie temperatures (TC) of 110 K. The saturated magnetization per interfacial Mn cation has been found to be 1.1 μB/Mn ion. The TC's of the superlattices are much lower than the TC of the alloy film while the saturated magnetization values are larger than that of the alloy film. These observations suggest that interdiffusion alone cannot account for ferromagnetism in the superlattices and that double exchange induced FM must play a role at the interfaces.

  10. Perpendicular magnetic anisotropy in Mn2CoAl thin film

    NASA Astrophysics Data System (ADS)

    Sun, N. Y.; Zhang, Y. Q.; Fu, H. R.; Che, W. R.; You, C. Y.; Shan, R.

    2016-01-01

    Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.

  11. Strained enabled Ferroelectricity in CaTiO3 Thin Films Probed by Nonlinear Optics and Scanning Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Vlahos, Eftihia; Kumar, Amit; Denev, Sava; Brooks, Charles; Schlom, Darrell; Eklund, Carl-Johan; Rabe, Karin M.; Fennie, Craig J.; Gopalan, Venkatraman

    2009-03-01

    Calcium titanate, CaTiO3 is not a ferroelectric in its bulk form. However, first principles calculations predict that biaxially tensile strained CaTiO3 thin films should become ferroelectric. Here, we indeed confirm that strained CaTiO3 films become ferroelectric with a Curie temperature of ˜125K. Optical second harmonic generation (SHG) measurements, polarization studies, and in-situ electric-field measurements for a number of films with different strain values will be presented: CaTiO3/DyScO3(110), CaTiO3/SrTiO3 (100),CaTiO3/GdScO3/NdGaO3(110), CaTiO3/LaSrAlO3(001) as well as for a single crystal CaTiO3. From these studies, we conclude that strained CaTiO3 films are ferroelectric with a point group symmetry of mm2, and show reversible domain switching characteristics under an electric field. We also present results of variable temperature piezoelectric force microscopy for imaging the polar domains in the ferroelectric phase. These results suggest that strain is a valuable tool for inducing polar, long range ferroelectric order in even non-polar ceramic materials such as CaTiO3.

  12. Strain dependence of the electronic properties of LaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Moon, S. J.; Kim, Y. S.

    2014-11-01

    We report on the transport and the core-level X-ray photoemission spectroscopy data of fully-strained LaTiO3 thin films grown on GdScO3 and SrTiO3 substrates. We observed that LaTiO3 thin film grown on GdScO3 showed insulating behavior but that grown on SrTiO3 exhibited a metallic character. We found that while the La 4 d photoemission spectra of the two films were nearly the same, their Ti 2 p and O 1 s data revealed a difference. Our results suggest that strain-induced changes in the Ti-O bonding play an important role in the electronic properties of LaTiO3 thin films.

  13. Controlling the preferential orientation in sol-gel prepared CaCu3Ti4O12 thin films by LaAlO3 and NdGaO3 substrates

    NASA Astrophysics Data System (ADS)

    Pongpaiboonkul, Suriyong; Kasa, Yumairah; Phokharatkul, Ditsayut; Putasaeng, Bundit; Hodak, Jose H.; Wisitsoraat, Anurat; Hodak, Satreerat K.

    2016-11-01

    Researchers have paid considerable attention to CaCu3Ti4O12 (CCTO) due to the colossal dielectric constant over a wide range of frequency and temperature. Despite of the growing number of works dealing with CCTO, there have been few studies of the role played by the substrate in inducing structural and dielectric effects of this material. In this work, highly-oriented CCTO thin films have been deposited on LaAlO3(100), NdGaO3(100) and NdGaO3(110) substrates using a sol-gel method. These single crystal substrates were chosen in terms of small lattice mismatch between CCTO and the substrate. The X-ray diffraction patterns showed that the CCTO film layers grow with different orientations depending upon the substrate used. We show that the preferred orientation of CCTO thin films can be manipulated to a high degree by growing it on specific crystal planes of the substrates without the use of buffer layers. Colossal dielectric constants are observed in our films which appear to correlate with the film crystallinity and preferred orientation.

  14. Growth of Ca{sub 2}MnO{sub 4} Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lacotte, M.; David, A.; Pravarthana, D.

    2014-12-28

    The local epitaxial growth of pulsed laser deposited Ca{sub 2}MnO{sub 4} films on polycrystalline spark plasma sintered Sr{sub 2}TiO{sub 4} substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 °C and 800 °C) was found to be 750 °C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew inmore » a grain-over-grain pattern such that each Ca{sub 2}MnO{sub 4} grain had a single OR with the Sr{sub 2}TiO{sub 4} grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001]{sub film}||[100][001]{sub sub}. The other two ORs were essentially rotated from the first by 90°, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90°). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides.« less

  15. Crystallization, fluoridation and some properties of apatite thin films prepared through rf-sputtering from CaO-P2O5 glasses.

    PubMed

    Yamashita, K; Matsuda, M; Arashi, T; Umegaki, T

    1998-07-01

    Using calcium phosphate glass targets with the CaO/P2O5 molar ratios of 1.50-0.50, much lower than the stoichiometric value of 3.3 for hydroxyapatite, thin films of stoichiometric hydroxy-, nonstoichiometric oxyhydroxy- and Ca-deficient oxyhydroxy-apatites were prepared on alumina ceramic substrates by rf-sputtering followed by post-annealing. Based on the present results, a phase diagram for CaO-P2O5 at low temperatures in the ambience of air was depicted for thin films. The ambient H2O vapor had an influence on the phase diagram: Tricalcium phosphate was changed to apatite in the presence of H2O vapor. Dense fluorohydroxyapatite thin films were prepared by fluoridation of those apatite thin films at a low temperature such as 200 degrees C. In the present report, some functional properties of thin films thus prepared were also shown.

  16. Strain localization in thin films of Bi(Fe,Mn)O 3 due to the formation of stepped Mn 4+-rich antiphase boundaries

    DOE PAGES

    MacLaren, I.; Sala, B.; Andersson, S. M. L.; ...

    2015-10-17

    Here, the atomic structure and chemistry of thin films of Bi(Fe,Mn)O 3 (BFMO) films with a target composition of Bi 2FeMnO 6 on SrTiO 3 are studied using scanning transmission electron microscopy imaging and electron energy loss spectroscopy. It is shown that Mn4+-rich antiphase boundaries are locally nucleated right at the film substrate and then form stepped structures that are approximately pyramidal in three dimensions. These have the effect of confining the material below the pyramids in a highly strained state with an out-of-plane lattice parameter close to 4.1 Å. Outside the area enclosed by the antiphase boundaries, the out-of-planemore » lattice parameter is much closer to bulk values for BFMO. This suggests that to improve the crystallographic perfection of the films whilst retaining the strain state through as much of the film as possible, ways need to be found to prevent nucleation of the antiphase boundaries. Since the antiphase boundaries seem to form from the interaction of Mn with the Ti in the substrate, one route to perform this would be to grow a thin buffer layer of pure BiFeO 3 on the SrTiO 3 substrate to minimise any Mn-Ti interactions.« less

  17. Coexistence of non-volatile bi-polar resistive switching and tunneling magnetoresistance in spatially confined La0.3Pr0.4Ca0.3MnO3 films

    NASA Astrophysics Data System (ADS)

    Jeon, J.; Jung, J.; Chow, K. H.

    2017-12-01

    We report the coexistence of non-volatile bi-polar resistive switching (RS) and tunneling magnetoresistance (TMR) in spatially confined La0.3Pr0.4Ca0.3MnO3 films grown on LaAlO3 substrates. At certain temperatures, the arrangement of electronic phase domains in these narrow systems mimics those found in heterostructured metal-insulator-metal devices. The relative spin orientations between adjacent ferromagnetic metallic phase domains enable the TMR effect, while the creation/annihilation of conduction filaments between the metallic phase domains produces the RS effect.

  18. Perpendicular magnetic anisotropy in Mn{sub 2}CoAl thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sun, N. Y.; Zhang, Y. Q.; Che, W. R.

    Heusler compound Mn{sub 2}CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn{sub 2}CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn{sub 2}CoAl films resulting from Mn-O and Co-O bonding at Mn{sub 2}CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could leadmore » to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.« less

  19. An innovative concept of use of redox-active electrolyte in asymmetric capacitor based on MWCNTs/MnO2 and Fe2O3 thin films

    PubMed Central

    Chodankar, Nilesh R.; Dubal, Deepak P.; Lokhande, Abhishek C.; Patil, Amar M.; Kim, Jin H.; Lokhande, Chandrakant D.

    2016-01-01

    In present investigation, we have prepared a nanocomposites of highly porous MnO2 spongy balls and multi-walled carbon nanotubes (MWCNTs) in thin film form and tested in novel redox-active electrolyte (K3[Fe(CN)6] doped aqueous Na2SO4) for supercapacitor application. Briefly, MWCNTs were deposited on stainless steel substrate by “dip and dry” method followed by electrodeposition of MnO2 spongy balls. Further, the supercapacitive properties of these hybrid thin films were evaluated in hybrid electrolyte ((K3[Fe(CN)6 doped aqueous Na2SO4). Thus, this is the first proof-of-design where redox-active electrolyte is applied to MWCNTs/MnO2 hybrid thin films. Impressively, the MWCNTs/MnO2 hybrid film showed a significant improvement in electrochemical performance with maximum specific capacitance of 1012 Fg−1 at 2 mA cm−2 current density in redox-active electrolyte, which is 1.5-fold higher than that of conventional electrolyte (Na2SO4). Further, asymmetric capacitor based on MWCNTs/MnO2 hybrid film as positive and Fe2O3 thin film as negative electrode was fabricated and tested in redox-active electrolytes. Strikingly, MWCNTs/MnO2//Fe2O3 asymmetric cell showed an excellent supercapacitive performance with maximum specific capacitance of 226 Fg−1 and specific energy of 54.39 Wh kg−1 at specific power of 667 Wkg−1. Strikingly, actual practical demonstration shows lightning of 567 red LEDs suggesting “ready-to sell” product for industries. PMID:27982087

  20. An innovative concept of use of redox-active electrolyte in asymmetric capacitor based on MWCNTs/MnO2 and Fe2O3 thin films.

    PubMed

    Chodankar, Nilesh R; Dubal, Deepak P; Lokhande, Abhishek C; Patil, Amar M; Kim, Jin H; Lokhande, Chandrakant D

    2016-12-16

    In present investigation, we have prepared a nanocomposites of highly porous MnO 2 spongy balls and multi-walled carbon nanotubes (MWCNTs) in thin film form and tested in novel redox-active electrolyte (K 3 [Fe(CN) 6 ] doped aqueous Na 2 SO 4 ) for supercapacitor application. Briefly, MWCNTs were deposited on stainless steel substrate by "dip and dry" method followed by electrodeposition of MnO 2 spongy balls. Further, the supercapacitive properties of these hybrid thin films were evaluated in hybrid electrolyte ((K 3 [Fe(CN) 6 doped aqueous Na 2 SO 4 ). Thus, this is the first proof-of-design where redox-active electrolyte is applied to MWCNTs/MnO 2 hybrid thin films. Impressively, the MWCNTs/MnO 2 hybrid film showed a significant improvement in electrochemical performance with maximum specific capacitance of 1012 Fg -1 at 2 mA cm -2 current density in redox-active electrolyte, which is 1.5-fold higher than that of conventional electrolyte (Na 2 SO 4 ). Further, asymmetric capacitor based on MWCNTs/MnO 2 hybrid film as positive and Fe 2 O 3 thin film as negative electrode was fabricated and tested in redox-active electrolytes. Strikingly, MWCNTs/MnO 2 //Fe 2 O 3 asymmetric cell showed an excellent supercapacitive performance with maximum specific capacitance of 226 Fg -1 and specific energy of 54.39 Wh kg -1 at specific power of 667 Wkg -1 . Strikingly, actual practical demonstration shows lightning of 567 red LEDs suggesting "ready-to sell" product for industries.

  1. Increased Curie Temperature Induced by Orbital Ordering in La0.67Sr0.33MnO3/BaTiO3 Superlattices.

    PubMed

    Zhang, Fei; Wu, Biao; Zhou, Guowei; Quan, Zhi-Yong; Xu, Xiao-Hong

    2018-01-17

    Recent theoretical studies indicated that the Curie temperature of perovskite manganite thin films can be increased by more than an order of magnitude by applying appropriate interfacial strain to control orbital ordering. In this work, we demonstrate that the regular intercalation of BaTiO 3 layers between La 0.67 Sr 0.33 MnO 3 layers effectively enhances ferromagnetic order and increases the Curie temperature of La 0.67 Sr 0.33 MnO 3 /BaTiO 3 superlattices. The preferential orbital occupancy of e g (x 2 -y 2 ) in La 0.67 Sr 0.33 MnO 3 layers induced by the tensile strain of BaTiO 3 layers is identified by X-ray linear dichroism measurements. Our results reveal that controlling orbital ordering can effectively improve the Curie temperature of La 0.67 Sr 0.33 MnO 3 films and that in-plane orbital occupancy is beneficial to the double exchange ferromagnetic coupling of thin-film samples. These findings create new opportunities for the design and control of magnetism in artificial structures and pave the way to a variety of novel magnetoelectronic applications that operate far above room temperature.

  2. Strain driven anisotropic magnetoresistance in antiferromagnetic La0.4Sr0.6MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Ward, T. Zac; Wong, A. T.; Takamura, Yayoi; Herklotz, Andreas

    2015-03-01

    Antiferromagnets (AFM) are a promising alternative to ferromagnets (FM) in spintronic applications. The reason stems from the fact that at high data storage densities stray fields could destroy FM set states while AFMs would be relatively insensitive to this data corruption. This work presents the first ever example of antiferromagnetic La0.4Sr0.6MnO3 thin films stabilized in different strain states. Strain is found to drive different types of AFM ordering, and these variations in ordering type are shown to have a profound impact on both the magnitude and character of the materials' resistive response to magnetic field direction, or anisotropic magnetoresistance (AMR) behavior (one standard of spintronic suitability). The compressively strained film shows the highest recorded AMR response in an ohmic AFM device of 63%, while the tensile strained film shows a typical AFM AMR of 0.6%. These findings demonstrate the necessity of understanding electron ordering in AFM spintronic applications and provide a new benchmark for AMR response. This work was supported by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division.

  3. Interface ferromagnetism in oxide superlattices of CaMnO3/CaRuO3

    NASA Astrophysics Data System (ADS)

    Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

    2001-08-01

    Oxide superlattices composed of antiferromagnetic insulator layers of CaMnO3 (10 unit cells) and paramagnetic metal layers of CaRuO3 (N unit cells) were fabricated on LaAlO3 substrates by pulsed-laser deposition. All the superlattices show ferromagnetic transitions at an almost identical temperature (TC˜95 K) and negative magnetoresistance below TC. Each magnetization and magnetoconductance of the whole superlattice at 5 K is constant and independent of CaRuO3 layer thickness when normalized by the number of the interfaces between CaMnO3 and CaRuO3. These results indicate that the ferromagnetism shows up only at the interface and is responsible for the magnetoresistance.

  4. Stress-induced surface magnetization of (La{sub 0.7}Sr{sub 0.3})MnO{sub 3} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kwon, C.; Lofland, S.E.; Bhagat, S.M.

    1997-09-01

    The role of stress on magnetic properties of epitaxial (La{sub 0.7}Sr{sub 0.3}) MnO{sub 3} (LSMO) films has been studied. The authors have investigated 1,100 {angstrom} thick LSMO films deposited on LaAlO{sub 3} (Sample L, under a compressive stress) and SrTiO{sub 3} (Sample S, under a tensile stress) using the magnetic force microscopy (MFM), DC hysteresis loop, ferromagnetic resonance (FMR) measurements. The magnetic force microscope image of Sample L shows a maze-like pattern indicating a sizable out-of-plane magnetization, while the magnetic image of Sample S shows a feather-like pattern indicative of an in-plane magnetization. The hysteresis loop and ferromagnetic resonance measurementsmore » give quantitative evidence for the role of the lattice mismatch between the film and the substrate in the magnetic anisotropy of the two films. The systematic examination of various thickness LSMO films on LaAlO{sub 3} reveals that the maze pattern is exhibited only between 500 {angstrom} and 1,700 {angstrom} thick films. Despite of larger anisotropy, no maze pattern is observed in films thinner than 360 {angstrom}.« less

  5. Thickness and angular dependent magnetic anisotropy of La0.67Sr0.33MnO3 thin films by Vectorial Magneto Optical Kerr Magnetometry

    NASA Astrophysics Data System (ADS)

    Chaluvadi, S. K.; Perna, P.; Ajejas, F.; Camarero, J.; Pautrat, A.; Flament, S.; Méchin, L.

    2017-10-01

    We investigate the in-plane magnetic anisotropy in La0.67Sr0.33MnO3 thin films grown on SrTiO3 (001) substrate using angular dependent room temperature Vectorial Magneto-Optical Kerr Magnetometry. The experimental data reveals that the magnetic anisotropy symmetry landscape significantly changes depending upon the strain and thickness. At low film thickness (12 and 25 nm) the dominant uniaxial anisotropy is due to interface effects, step edges due to mis-cut angle of SrTiO3 substrate. At intermediate thickness, the magnetic anisotropy presents a competition between magnetocrystalline (biaxial) and substrate step induced (uniaxial) anisotropy. Depending upon their relative strengths, a profound biaxial or uniaxial or mixed anisotropy is favoured. Above the critical thickness, magnetocrystalline anisotropy dominates all other effects and shows a biaxial anisotropy.

  6. Local structure in LaMnO3 and CaMnO3 perovskites: A quantitative structural refinement of Mn K -edge XANES data

    NASA Astrophysics Data System (ADS)

    Monesi, C.; Meneghini, C.; Bardelli, F.; Benfatto, M.; Mobilio, S.; Manju, U.; Sarma, D. D.

    2005-11-01

    Hole-doped perovskites such as La1-xCaxMnO3 present special magnetic and magnetotransport properties, and it is commonly accepted that the local atomic structure around Mn ions plays a crucial role in determining these peculiar features. Therefore experimental techniques directly probing the local atomic structure, like x-ray absorption spectroscopy (XAS), have been widely exploited to deeply understand the physics of these compounds. Quantitative XAS analysis usually concerns the extended region [extended x-ray absorption fine structure (EXAFS)] of the absorption spectra. The near-edge region [x-ray absorption near-edge spectroscopy (XANES)] of XAS spectra can provide detailed complementary information on the electronic structure and local atomic topology around the absorber. However, the complexity of the XANES analysis usually prevents a quantitative understanding of the data. This work exploits the recently developed MXAN code to achieve a quantitative structural refinement of the Mn K -edge XANES of LaMnO3 and CaMnO3 compounds; they are the end compounds of the doped manganite series LaxCa1-xMnO3 . The results derived from the EXAFS and XANES analyses are in good agreement, demonstrating that a quantitative picture of the local structure can be obtained from XANES in these crystalline compounds. Moreover, the quantitative XANES analysis provides topological information not directly achievable from EXAFS data analysis. This work demonstrates that combining the analysis of extended and near-edge regions of Mn K -edge XAS spectra could provide a complete and accurate description of Mn local atomic environment in these compounds.

  7. Two-dimensional La2/3Sr4/3MnO4 Manganite Films Probed by Epitaxial Strain and Cation Ordering

    NASA Astrophysics Data System (ADS)

    Nelson-Cheeseman, Brittany; Santos, Tiffany; Bhattacharya, Anand

    2010-03-01

    Dimensionality is known to play a central role in the properties of strongly correlated systems. Here we investigate magnetism and transport in thin films of the Ruddlesden-Popper n=1 phase, La1-xSr1+xMnO4. Within this material, the MnO6-octahedra form two-dimensional perovskite sheets separated by an extra rocksalt layer. By fabricating high quality thin films with ozone-assisted molecular beam epitaxy, we study how the effects of epitaxial strain and intentional cation ordering, known as digital synthesis, influence the properties of this 2-dimensional manganite. For example, at the same Mn^3+:Mn^4+ ratio (2:1) as its fully spin-polarized 3D manganite counterpart, this two dimensional analog at x=1/3 only displays a spin glass phase below 20K in bulk. This is believed to result from a competition between superexchange and double exchange, as well as disordered Jahn-Teller distortions. However, in our films we find weak ferromagnetic order up to much higher temperatures in addition to a low temperature spin glass phase. We will discuss how strain and cation order effect the presence of this weak ferromagnetism.

  8. Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

    NASA Astrophysics Data System (ADS)

    Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

    2018-04-01

    In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

  9. Effect of substrate on the atomic structure and physical properties of thermoelectric Ca3Co4O9 thin films

    NASA Astrophysics Data System (ADS)

    Qiao, Q.; Gulec, A.; Paulauskas, T.; Kolesnik, S.; Dabrowski, B.; Ozdemir, M.; Boyraz, C.; Mazumdar, D.; Gupta, A.; Klie, R. F.

    2011-08-01

    The incommensurately layered cobalt oxide Ca3Co4O9 exhibits an unusually high Seebeck coefficient as a polycrystalline bulk material, making it ideally suited for many high temperature thermoelectric applications. In this paper, we investigate properties of Ca3Co4O9 thin films grown on cubic perovskite SrTiO3, LaAlO3, and (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates and on hexagonal Al2O3 (sapphire) substrates using the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy analysis indicate strain-free growth of films, irrespective of the substrate. However, depending on the lattice and symmetry mismatch, defect-free growth of the hexagonal CoO2 layer is stabilized only after a critical thickness and, in general, we observe the formation of a stable Ca2CoO3 buffer layer near the substrate-film interface. Beyond this critical thickness, a large concentration of CoO2 stacking faults is observed, possibly due to weak interlayer interaction in this layered material. We propose that these stacking faults have a significant impact on the Seebeck coefficient and we report higher values in thinner Ca3Co4O9 films due to additional phonon scattering sites, necessary for improved thermoelectric properties.

  10. The structural and electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites

    NASA Astrophysics Data System (ADS)

    Ruli, F.; Kurniawan, B.; Imaduddin, A.

    2018-04-01

    In this paper, the authors report the electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites synthesized using sol-gel method. The X-ray diffraction (XRD) patterns of polycrystalline La0.8Ca0.17Ag0.03MnO3 samples reveal an orthorhombic perovskite structure with Pnma space group. Analysis using energy dispersive X-ray (EDX) confirms that the sample contains all expected chemical elements without any additional impurity. The measurement of resistivity versus temperature using cryogenic magnetometer was performed to investigate the electrical properties. The results show that the electrical resistivity of polycrystalline La0.8Ca0.17Ag0.03MnO3 exhibits metalic behavior below 244 K. The temperature dependence of electrical resistivity dominantly emanates from electron-electron scattering and the grain/domain boundary play a important role in conduction mechanism in polycrystalline La0.8Ca0.17Ag0.03MnO3.

  11. Origin of colossal dielectric response of CaCu3Ti4O12 studied by using CaTiO3/CaCu3Ti4O12/CaTiO3 multilayer thin films

    NASA Astrophysics Data System (ADS)

    Mitsugi, Masakazu; Asanuma, Shutaro; Uesu, Yoshiaki; Fukunaga, Mamoru; Kobayashi, Wataru; Terasaki, Ichiro

    2007-06-01

    To elucidate the origin of the colossal dielectric response (CDR) of CaCu3Ti4O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTiO3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.

  12. Oxygen K- and Mn L-Edges of La_xMn_yO_3-d Films

    NASA Astrophysics Data System (ADS)

    Deleon, Michael; Tyson, Trevor; Qian, Q.; Dubourdieu, C.; Senateur, J. P.; Bosak, A.; Arena, D. A.

    2003-03-01

    The La_xMn_yO_3-d system holds much interest due to it's wide range of magnetic and transport properties with varying compositions. Oxygen defects and lanthanum deficiencies in the parent compound LaMnO3 induce a mixture of valences at the Mn site which enables transitions to a ferromagnetic metallic state through double exchange [1-5]. We have measured the oxygen K-edges and Mn L-edges for La_xMn_yO_3-d films of varying x deposited on (100) SrTiO3 and x=0.8 on varying thickness deposited on (001) LaAlO_3. These results are interpreted by multiplet structure computations. In addition, band structure results will be used to track changes in unoccupied levels on the Mn and O sites. This work is supported by NSF Career Grant DMR-9733862 and DMR-0209243. [1]A. Gupta, T.R. McGuire, P.R. Duncombe, M. Rupp, J. Z. Sun, W. J. Gallagher, G. Xiao. Appl. Phys. Let. 67, 3494 (1995) [2]P. S. I. P. N. de Silva, F.M. Richards, L. F. Cohen, J. A. Alonso, M. J. Martinez-Lope, M. T. Casais, K. A. Thomas, J. L. MacManus-Driscoll. J. A. Phys. 83, 3394(1998) [3] C. Chen, A. de Lozanne. A. Phys. Let. 73, 3950(1998) [4] S. J. Kim, C. S. Kim, S. Park, B. W. Lee. J. A. Phys. 89, 7416 (2001) [5] J. Topfer, J. B. Goodenough. Sol. St. Ionics 101, 1215 (1997)

  13. Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

    PubMed

    Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

    2012-01-01

    In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

  14. Ferromagnetism in tetragonally distorted LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Mehta, Virat Vasav; Liberati, Marco; Wong, Franklin J.; Chopdekar, Rajesh Vilas; Arenholz, Elke; Suzuki, Yuri

    2009-04-01

    Thin films of epitaxial LaCoO3 were synthesized on SrTiO3 and (La ,Sr)(Al,Ta)O3 substrates, varying the oxygen background pressure in order to evaluate the impact of epitaxial growth as well as oxygen vacancies on the long range magnetic order. The epitaxial constraints from the substrate impose a tetragonal distortion compared to the bulk form. X-ray absorption and x-ray magnetic circular dichroism measurements confirmed that the ferromagnetism arises from the Co ions and persists through the entire thickness of the film. It was found that for the thin films to show ferromagnetic order they have to be grown under the higher oxygen pressures. A correlation of the structure and magnetism suggests that the tetragonal distortions induce the ferromagnetism.

  15. Strain and Ni substitution induced ferromagnetism in LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Ashok; Kumar, Vinod; Kumar, Rajesh; Kumar, Ravi

    2018-05-01

    We have grown epitaxial strained films of LaCoO3 and LaCo0.7Ni0.3O3 on LaAlO3 (100) substrate via pulsed laser deposition. Superconducting quantum interference device magnetization measurements show that, unlike its bulk counterpart, the ground state of the strained LaCoO3 on LAO is ferromagnetic. The saturation magnetization has been found increase strongly from a value of 118 emu/cm3 to 350 emu/ cm3 for Ni substituted thin film. Present study reveals that strain can stabilize FM order in these thin films down to low temperature, which can further be tuned to higher saturation magnetization with the Ni substitution.

  16. Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ghonge, S.G.; Goo, E.; Ramesh, R.

    1994-12-31

    TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

  17. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    PubMed Central

    2011-01-01

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated. PMID:21711646

  18. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

    2011-12-01

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

  19. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

    PubMed

    Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

    2011-02-04

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

  20. Anisotropic spin-density distribution and magnetic anisotropy of strained La1-xSrxMnO3 thin films: angle-dependent x-ray magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Shibata, Goro; Kitamura, Miho; Minohara, Makoto; Yoshimatsu, Kohei; Kadono, Toshiharu; Ishigami, Keisuke; Harano, Takayuki; Takahashi, Yukio; Sakamoto, Shoya; Nonaka, Yosuke; Ikeda, Keisuke; Chi, Zhendong; Furuse, Mitsuho; Fuchino, Shuichiro; Okano, Makoto; Fujihira, Jun-ichi; Uchida, Akira; Watanabe, Kazunori; Fujihira, Hideyuki; Fujihira, Seiichi; Tanaka, Arata; Kumigashira, Hiroshi; Koide, Tsuneharu; Fujimori, Atsushi

    2018-01-01

    Magnetic anisotropies of ferromagnetic thin films are induced by epitaxial strain from the substrate via strain-induced anisotropy in the orbital magnetic moment and that in the spatial distribution of spin-polarized electrons. However, the preferential orbital occupation in ferromagnetic metallic La1-xSrxMnO3 (LSMO) thin films studied by x-ray linear dichroism (XLD) has always been found out-of-plane for both tensile and compressive epitaxial strain and hence irrespective of the magnetic anisotropy. In order to resolve this mystery, we directly probed the preferential orbital occupation of spin-polarized electrons in LSMO thin films under strain by angle-dependent x-ray magnetic circular dichroism (XMCD). Anisotropy of the spin-density distribution was found to be in-plane for the tensile strain and out-of-plane for the compressive strain, consistent with the observed magnetic anisotropy. The ubiquitous out-of-plane preferential orbital occupation seen by XLD is attributed to the occupation of both spin-up and spin-down out-of-plane orbitals in the surface magnetic dead layer.

  1. Tuning the magnetocaloric properties of La0.7Ca0.3MnO3 manganites through Ni-doping

    NASA Astrophysics Data System (ADS)

    Gómez, A.; Chavarriaga, E.; Supelano, I.; Parra, C. A.; Morán, O.

    2018-04-01

    The effect of Ni2+ doping on the magnetic and magnetocaloric properties of La0.7Ca0.3MnO3 manganites synthesized via the auto-combustion method is reported. The aim of studying Ni2+-substituted La0.7Ca0.3Mn1 - xNixO3 (x = 0 , 0.02 , 0.07, and 0.1) manganites was to explore the possibility of increasing the operating temperature range for the magnetocaloric effect through tuning of the magnetic transition temperature. X-ray diffraction analysis confirmed the phase purity of the synthesized samples. The substitution of Mn3+ ions by Ni2+ ions in the La0.7Ca0.3MnO3 lattice was also corroborated through this technique. The dependence of the magnetization on the temperature reveals that all the compositions exhibit a well-defined ferromagnetic to paramagnetic transition near the Curie temperature. A systematic decrease in the values of the Curie temperature is clearly observed upon Ni2+ doping. Probably the replacement of Mn3+ by Ni2+ ions in the La0.7Ca0.3MnO3 lattice weakens the Mn3+-O-Mn4+ double exchange interaction, which leads to a decrease in the transition temperature and the magnetic moment in the samples. By using Arrott plots, it was found that the phase transition from ferromagnetic to paramagnetic is second order. The maximum magnetic entropy changes observed for the x = 0 , 0.02 , 0.07, and 0.1 composites was 0.85, 0.77, 0.63, and 0.59 J/kg K, respectively, under a magnetic field of 1.5 T. In general, it was verified that the magnetic entropy change achieved for La0.7Ca0.3Mn1 - xNixO3 manganites synthesized via the auto-combustion method is higher than those reported for other manganites with comparable Ni2+-doping levels synthesized via standard solid state reaction. The addition of Ni2+ increases the value of the relative cooling power as compared to that of the parent compound. The highest value of this parameter (∼60 J/kg) is found for a Ni-doping level of 2% around 230 K in a field of 1.5 T.

  2. Understanding the Origin of Ferromagnetism in Strained LaCoO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Ma, J. X.; Shi, J.; Freeland, J. W.

    2009-03-01

    Using strain to control the behavior of strongly correlated materials offers new opportunities to control fundamental properties. For the case of magnetism, LaCoO3 offers the ability to use strain through thin film growth to manipulate directly the spin-state of Co in this system. Here we present the results of a detailed polarized x-ray spectroscopy study of LaCoO3 thin films grown on SrTiO3(001) and LaAlO3 (001) substrates. X-ray diffraction from 25 nm thin films confirm the films are fully strained in both cases and, for films under tensile strain, total moment magnetometry shows a clear transition to ferromagnetic state at ˜80K. X-ray absorption shows that the films grown from a LaCoO3 target are slightly hole doped due to non-stoichiometry generated during growth (effective doping ˜ 0.1 holes per unit cell), which in the bulk is sufficient to destroy the low-spin state. However, even though the films are slightly hole doped, the films under tensile strain show long range ferromagnetic order unlike the bulk system. Since the films are insulating, these results are consistent with a ferromagnetic insulating state arising due to superexchange. Work at UCR is supported by ONR/DMEA under award H94003-08-2-0803.

  3. Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

    NASA Astrophysics Data System (ADS)

    Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

    2018-01-01

    The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

  4. Band diagram and rate analysis of thin film spinel LiMn 2O 4 formed by electrochemical conversion of ALD-grown MnO

    DOE PAGES

    Young, Matthias J.; Schnabel, Hans-Dieter; Holder, Aaron M.; ...

    2016-09-22

    Nanoscale spinel lithium manganese oxide is of interest as a high-rate cathode material for advanced battery technologies among other electrochemical applications. In this work, the synthesis of ultrathin films of spinel lithium manganese oxide (LiMn 2O 4) between 20 and 200 nm in thickness by room-temperature electrochemical conversion of MnO grown by atomic layer deposition (ALD) is demonstrated. The charge storage properties of LiMn 2O 4 thin films in electrolytes containing Li +, Na +, K +, and Mg 2+ are investigated. A unified electrochemical band-diagram (UEB) analysis of LiMn 2O 4 informed by screened hybrid density functional theory calculationsmore » is also employed to expand on existing understanding of the underpinnings of charge storage and stability in LiMn 2O 4. It is shown that the incorporation of Li + or other cations into the host manganese dioxide spinel structure (λ-MnO 2) stabilizes electronic states from the conduction band which align with the known redox potentials of LiMn 2O 4. Furthermore, the cyclic voltammetry experiments demonstrate that up to 30% of the capacity of LiMn 2O 4 arises from bulk electronic charge-switching which does not require compensating cation mass transport. As a result, the hybrid ALD-electrochemical synthesis, UEB analysis, and unique charge storage mechanism described here provide a fundamental framework to guide the development of future nanoscale electrode materials for ion-incorporation charge storage.« less

  5. Composition gradient optimization and electrical characterization of (Pb, Ca)TiO3 thin films

    NASA Astrophysics Data System (ADS)

    Bao, Dinghua; Mizutani, Nobuyasu; Zhang, Liangying; Yao, Xi

    2001-01-01

    Compositionally graded (Pb, Ca)TiO3 thin films were prepared by a monoethanolamine-modified sol-gel technique on platinum-coated silicon substrates at the annealing temperature of 600 °C. The composition gradient of the films was greatly improved by a modified annealing method. The dielectric constants, for up-graded and down-graded films annealed at 600 °C for 60 min, were found to be 469 and 355, respectively. Both were larger than those reported for conventional (Pb, Ca)TiO3 thin films. The compositionally graded films had large polarization offsets in hysteresis loops when excited by an alternating electric field. The more smooth the composition gradient of the graded film, the larger the polarization offset. This was consistent with a theoretical model reported previously by Mantese and coworkers [Appl. Phys. Lett. 71, 2047 (1997)]. The magnitude of polarization offset displayed a power-law dependence on the electric field, and the direction of the offset depended on the direction of the composition gradient with respect to the substrate. Both up-graded and down-graded films had good leakage current characteristics.

  6. Cation Valence Control in La0.7Sr0.3Co0.5Mn0.5O3 Thin Films and Bilayers

    NASA Astrophysics Data System (ADS)

    Kane, Alex; Chopdekar, Rajesh; Arenholz, Elke; Mehta, Apurva; Takamura, Yayoi

    The unique interplay between spin, orbital, charge, and lattice degrees of freedom at interfaces in perovskite oxides makes them model systems to probe and exert magnetic control at the nanoscale. Previous work revealed exchange coupling in bilayers composed of a hard ferromagnetic (FM) La0.7Sr0.3CoO3 (LSCO) layer and a soft FM La0.7Sr0.3MnO3 (LSMO) layer, coincident with charge transfer across the LSCO/LSMO interface. An interfacial Co2+-rich LSCO layer produced a FM superexchange interaction with Mn4+ ions in the adjacent LSMO layer, mimicking the behavior of ordered Co2+/Mn4 + ions in the double perovskite La2CoMnO6. In an attempt to manipulate the extent of charge transfer in this system, La0.7Sr0.3Co0.5Mn0.5O3 (LSCMO)/LSMO and LSCMO/LSCO bilayers were deposited by pulsed laser deposition. Bulk magnetometry and soft x-ray magnetic spectroscopy were used to investigate the Mn/Co magnetic and electronic structures, comparing the surface/interface dominant effects vs. the film average. The LSCMO/LSMO bilayer enhanced the magnetically soft Co2+ population at the interface, while the LSCMO/LSCO bilayers strongly suppressed the Co2+ state in the LSCMO layer.

  7. Thickness dependent properties of CMR Manganite thin films on lattice mismatched substrates: Distinguishing Strain and Interface Effects

    NASA Astrophysics Data System (ADS)

    Davidson, Anthony, III; Kolagani, Rajeswari; Bacharova, Ellisaveta; Yong, Grace; Smolyaninova, Vera; Schaefer, David; Mundle, Rajeh

    2007-03-01

    Epitaxial thin films of CMR manganite materials have been known to show thickness dependent electrical and magnetic properties on lattice mismatched substrates. Below a critical thickness, insulator-metal transition is suppressed. These effects have been largely attributed to the role of bi-axial lattice mismatch strain. Our recent results of epitaxial thin films of La0.67Ca0.33MnO3 (LCMO) on two substrates with varying degrees of compressive lattice mismatch indicate that, in addition to the effect of lattice mismatch strain, the thickness dependence of the properties are influenced by other factors possibly related to the nature of the film substrate interface and defects such as twin boundaries. We have compared the properties of LCMO films on (100) oriented LaAlO3 and (001) oriented NdCaAlO4 both of which induce compressive bi-axial strain. Interestingly, the suppression of the insulator-metal transition is less in films on NCAO which has a larger lattice mismatch. We will present results correlating the electrical and magneto transport properties with the structure and morphology of the films.

  8. Direct Correlations of Grain Boundary Potentials to Chemical States and Dielectric Properties of Doped CaCu3Ti4O12 Thin Films.

    PubMed

    Cho, Ahra; Han, Chan Su; Kang, Meenjoo; Choi, Wooseok; Lee, Jihwan; Jeon, Jaecheol; Yu, Sujae; Jung, Ye Seul; Cho, Yong Soo

    2018-05-09

    Colossal dielectric constant CaCu 3 Ti 4 O 12 has been recognized as one of the rare materials having intrinsic interfacial polarization and thus unusual dielectric characteristics, in which the electrical state of the grain boundary is critical. Here, the direct correlation between the grain boundary potential and relative permittivity is proposed for the CaCu 3 Ti 4 O 12 thin films doped with Zn, Ga, Mn, and Ag as characterized by Kelvin probe force microscopy. The dopants are intended to provide the examples of variable grain boundary potentials that are driven by chemical states including Cu + , Ti 3+ , and oxygen vacancy. Grain boundary potential is nearly linearly proportional to the dielectric constant. This effect is attributed to the increased charge accumulation near the grain boundary, depending on the choice of the dopant. As an example, 1 mol % Ag-doped CaCu 3 Ti 4 O 12 thin films demonstrate the best relative permittivity as associated with a higher grain boundary potential of 120.3 mV compared with 82.6 mV for the reference film. The chemical states across grain boundaries were further verified by using spherical aberration-corrected scanning transmission electron microscopy with the simultaneous electron energy loss spectroscopy.

  9. Facile synthesis of hierarchical mesoporous weirds-like morphological MnO2 thin films on carbon cloth for high performance supercapacitor application.

    PubMed

    Shinde, Pragati A; Lokhande, Vaibhav C; Ji, Taeksoo; Lokhande, Chandrakant D

    2017-07-15

    The mesoporous nanostructured metal oxides have a lot of capabilities to upsurge the energy storing capacity of the supercapacitor. In present work, different nanostructured morphologies of MnO 2 have been successfully fabricated on flexible carbon cloth by simple but capable hydrothermal method at different deposition temperatures. The deposition temperature has strong influence on reaction kinetics, which subsequently alters the morphology and electrochemical performance. Among different nanostructured MnO 2 thin films, the mesoporous weirds composed thin film obtained at temperature of 453K exhibits excellent physical and electrochemical features for supercapacitor application. The weirds composed MnO 2 thin film exhibits specific surface area of 109m 2 g -1 , high specific capacitance of 595Fg -1 with areal capacitance of 4.16Fcm -2 at a scan rate of 5mVs -1 and high specific energy of 56.32Whkg -1 . In addition to this, MnO 2 weirds attain capacity retention of 87 % over 2000 CV cycles, representing better cycling stability. The enhanced electrochemical performance could be ascribed to direct growth of highly porous MnO 2 weirds on carbon cloth which provide more pathways for easy diffusion of electrolyte into the interior of electroactive material. The as-fabricated electrode with improved performance could be ascribed as a potential electrode material for energy storage devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Fabrication and chemical composition of RF magnetron sputtered Tl-Ca-Ba-Cu-O high Tc superconducting thin films

    NASA Technical Reports Server (NTRS)

    Subramanyam, G.; Radpour, F.; Kapoor, V. J.; Lemon, G. H.

    1990-01-01

    The preparation of TlCaBaCuO superconducting thin films on (100) SrTiO3 substrates is described, and the results of their characterization are presented. Sintering and annealing the thin films in a Tl-rich ambient yielded superconductivity with a Tc of 107 K. The results of an XPS study support two possible mechanisms for the creation of holes in the TlCaBaCuO compound: (1) partial substitution of Ca(2+) for Tl(3+), resulting in hole creation, and (2) charge transfer from Tl(3+) to the CuO layers, resulting in a Tl valence between +3 and +1.

  11. Structural, transport and thermoelectric properties of Nb-doped CaLaMnO perovskite

    NASA Astrophysics Data System (ADS)

    Villa, J. I.; Rodríguez, J. E.

    2014-12-01

    Poly-crystalline perovskite-type (CaLaMnO) Ca0.95La0.05Mn1-xNbxO3 (0.0 ≤ x ≤ 0.10) was synthesized using the conventional solid-state reaction method. Structural and morphological properties were studied by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM), respectively. Their transport and thermoelectric properties were studied from electrical resistivity ρ(T) and Seebeck coefficient S(T) measurements as a function of temperature and niobium content. The Rietveld analysis revealed a compound with orthorhombic structure, where their lattice parameters increase with the niobium content which is given by a distortion in octahedra MnO6. Electrical resistivity exhibits a semiconducting-like behavior, for low niobium contents (Nb ≤ 0.03) the magnitude of the electrical resistivity decreases, reaching minimum values close to 0.1 Ω - cm. Seebeck coefficient is negative in all studied temperature range. The temperature behavior of S(T) is interpreted in terms of variable range hopping (VRH) and Heikes model. From ρ(T) and S(T) measurements it was possible to calculate the thermoelectric power factor (PF), which reaches maximum values around 0.4 μW /K2 -cm. These values make these ceramics promising electronic thermoelectric materials.

  12. Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

    PubMed Central

    Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

    2016-01-01

    Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications. PMID:27703253

  13. Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

    NASA Astrophysics Data System (ADS)

    Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

    2016-10-01

    Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

  14. Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates.

    PubMed

    Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y B; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

    2016-10-05

    Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO 3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu 3 Ti 4 O 12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

  15. Electric Field Control of the Ferromagnetic CaRuO3 /CaMnO3 Interface

    NASA Astrophysics Data System (ADS)

    Grutter, Alexander; Kirby, Brian; Gray, Matthew; Flint, Charles; Suzuki, Yuri; Borchers, Julie

    2015-03-01

    Electric field control of magnetism has been recognized as one of the most important goals in nanoscale magnetics research. The most popular routes towards achieving magnetoelectric (ME) coupling have focused on heterostructures incorporating multiferroics or ferroelectrics. Such studies often rely on voltage induced distortion to induce strain in the magnetic film and alter the magnetic properties. However, successful attempts to induce ME coupling without multiferroicity or magnetoelasticity remain relatively rare. The ferromagnetic interface between the antiferromagnetic insulator CaMnO3 and the paramagnetic metal CaRuO3 is a promising candidate for direct magnetization control. This interfacial ferroagnetism is stabilized through the competition between interfacial double exchange and antiferromagnetic superexchange between adjacent Mn4+ so that the system is expected to be very sensitive to small changes in interfacial carrier density. Using polarized neutron reflectometry, we have probed the electric field dependence of the interfacial magnetization of CaRuO3/CaMnO3 bilayers deposited on SrTiO3. We find that electric fields of +/-8 kV/m are sufficient to switch the interfaces from largely ferromagnetic to completely antiferromagnetic.

  16. Multi-functional properties of CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

    2012-09-01

    In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

  17. Room-Temperature Multiferroics and Thermal Conductivity of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 Epitaxial Thin Films (x = 0.1 and 0.2).

    PubMed

    Zhang, Ji; Sun, Wei; Zhao, Jiangtao; Sun, Lei; Li, Lei; Yan, Xue-Jun; Wang, Ke; Gu, Zheng-Bin; Luo, Zhen-Lin; Chen, Yanbin; Yuan, Guo-Liang; Lu, Ming-Hui; Zhang, Shan-Tao

    2017-08-02

    Thin films of 0.85BiFe 1-2x Ti x Mg x O 3 -0.15CaTiO 3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO 3 substrate with and without a conductive La 0.7 Sr 0.3 MnO 3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the thin films with very high growth quality. Both the C-1 and C-2 thin films show well-shaped magnetization-magnetic field hysteresis at room temperature, with enhanced switchable magnetization values of 145.3 and 42.5 emu/cm 3 , respectively. The polarization-electric loops and piezoresponse force microscopy measurements confirm the room-temperature ferroelectric nature of both films. However, the C-1 films illustrate a relatively weak ferroelectric behavior and the poled states are easy to relax, whereas the C-2 films show a relatively better ferroelectric behavior with stable poled states. More interestingly, the room-temperature thermal conductivity of C-1 and C-2 films are measured to be 1.10 and 0.77 W/(m·K), respectively. These self-consistent multiferroic properties and thermal conductivities are discussed by considering the composition-dependent content and migration of Fe-induced electrons and/or charged point defects. This study not only provides multifunctional materials with excellent room-temperature magnetic, ferroelectric, and thermal conductivity properties but may also stimulate further work to develop BiFeO 3 -based materials with unusual multifunctional properties.

  18. Engineering helimagnetism in MnSi thin films

    NASA Astrophysics Data System (ADS)

    Zhang, S. L.; Chalasani, R.; Baker, A. A.; Steinke, N.-J.; Figueroa, A. I.; Kohn, A.; van der Laan, G.; Hesjedal, T.

    2016-01-01

    Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ˜18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  19. Effect of external magnetic field on the crystal growth of nano-structured Zn xMn 1- x+ yZr yFe 2-2 yO 4 thin films

    NASA Astrophysics Data System (ADS)

    Anjum, Safia; Rafique, M. S.; Khaleeq-ur-Rahaman, M.; Siraj, K.; Usman, Arslan; Ahsan, A.; Naseem, S.; Khan, K.

    2011-06-01

    Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 and Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films with different concentrations of Mn and Zr have been deposited on single crystal n-Si (400) at room temperature (RT) by pulse laser deposition technique (PLD). The films have been deposited under two conditions: (i) with the applied external magnetic field across the propagation of the plume (ii) without applied external magnetic field ( B=0). XRD results show the films have spinel cubic structure when deposited in the presence of magnetic field. SEM and AFM observations clearly show the effect of external applied magnetic field on the growth of films in terms of small particle size, improved uniformity and lower r.m.s. roughness. Thin films deposited under the influence of external magnetic field exhibit higher magnetization as measured by the VSM. The optical band gap energy Eg, refractive index n, reflection, absorption and the thickness of the thin films were measured by spectroscopy ellipsometer. The reflection of Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films is higher than Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 thin films due to the greater concentration of Zr. The thicknesses of the thin films under the influence of external magnetic field are larger than the films grown without field for both samples. The optical band gap energy Eg decreases with increasing film thickness. The films with external magnetic field are found highly absorbing in nature due to the larger film thickness.

  20. Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity

    NASA Astrophysics Data System (ADS)

    Fiorenza, P.; Lo Nigro, R.; Sciuto, A.; Delugas, P.; Raineri, V.; Toro, R. G.; Catalano, M. R.; Malandrino, G.

    2009-03-01

    The physical properties of CaCu3Ti4O12 (CCTO) thin films grown by metal organic chemical vapor deposition on LaAlO3 substrates have been investigated. The structural, compositional, and optical characteristics have been evaluated, and all the collected data demonstrated that in the obtained (001) epitaxial CCTO thin films, a low defect density is present. The electrical behavior of the deposited thin films has been studied from both micro- and nanoscopic points of view and compared with the properties reported in the literature. The electrical measurements on large area capacitors indicated that in the investigated work frequency range (102-106 Hz), the CCTO films possess dielectric constants close to the theoretically predicted "intrinsic" value and almost independent of the frequency. The nanoscopic dielectric investigation demonstrated that the deposited CCTO films possess n-type semiconducting nature and that a colossal extrinsic behavior can be locally achieved.

  1. High-temperature thermoelectric properties of Ca0.92La0.04RE0.04MnO3 (RE = Sm, Dy and Yb) prepared by coprecipitation

    NASA Astrophysics Data System (ADS)

    Li, Cuiqin; Chen, Qianlin; Yan, Yunan; Li, Yanan; Zhao, Ying

    2018-02-01

    A series of Ca0.92La0.04RE0.04MnO3 (RE = Sm, Dy and Yb) compounds are synthesized via a coprecipitation technique. The influence of La/RE dual doping on the phase structure, microstructure and thermoelectric properties of the CaMnO3 system is investigated. Increased material density with grain sizes of 1-2 μm and a homogeneous microstructure is realized. Dual doping decreases the electrical resistivity due to an increase in the carrier concentration and also decreases the thermal conductivity due to increased grain scattering, damping of local vibrations by heavier La/RE ions compared to Ca and lattice distortion. The Ca0.92La0.04Yb0.04MnO3 shows the highest power factor of 3.49 × 10-4 W m-1 K-2 and the highest dimensionless figure of merit ZT of 0.25 at 770 K, which is approximately 3 times larger than that obtained for the undoped CaMnO3 and significantly larger than that of single-doped CaMnO3 prepared by solid-state reaction. This work provides a basic foundation for the industrial application of this thermoelectric material.

  2. Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction

    NASA Astrophysics Data System (ADS)

    Minamizawa, Yuto; Kitazawa, Tomohiro; Hidaka, Shiro; Toyota, Hideyuki; Nakamura, Shin-ichi; Uchitomi, Naotaka

    2018-04-01

    The conduction type in (Zn,Sn,Mn)As2 thin films grown by molecular beam epitaxy (MBE) on InP substrates was found to be controllable from p-type to n-type as a function of Mn content. n-type (Zn,Sn,Mn)As2 thin films were obtained by Mn doping of more than approximately 11 cat.%. It is likely that Mn interstitials (MnI) incorporated by excess Mn doping are located at tetrahedral hollow spaces surrounded by Zn and Sn cation atoms and four As atoms, which are expected to act as donors in (Zn,Sn,Mn)As2, resulting in n-type conduction. The effect of annealing on the structural, electrical and magnetic properties of n-type (Zn,Sn,Mn)As2 thin films was investigated as functions of annealing temperature and time. It was revealed that even if the annealing temperature is considerably higher than the growth temperature of 320 °C, the magnetic properties of the thin films remain stable. This suggests that a MnI complex surrounded by Zn and Sn atoms is thermally stable during high-temperature annealing. The n-type (Zn,Sn,Mn)As2 thin films may be suitable for application as n-type spin-polarized injectors.

  3. Interfacial Ferromagnetism and Exchange Bias in CaRuO3/CaMnO3 Superlattices

    NASA Astrophysics Data System (ADS)

    He, C.; Grutter, A. J.; Gu, M.; Browning, N. D.; Takamura, Y.; Kirby, B. J.; Borchers, J. A.; Kim, J. W.; Fitzsimmons, M. R.; Zhai, X.; Mehta, V. V.; Wong, F. J.; Suzuki, Y.

    2012-11-01

    We have found ferromagnetism in epitaxially grown superlattices of CaRuO3/CaMnO3 that arises in one unit cell at the interface. Scanning transmission electron microscopy and electron energy loss spectroscopy indicate that the difference in magnitude of the Mn valence states between the center of the CaMnO3 layer and the interface region is consistent with double exchange interaction among the Mn ions at the interface. Polarized neutron reflectivity and the CaMnO3 thickness dependence of the exchange bias field together indicate that the interfacial ferromagnetism is only limited to one unit cell of CaMnO3 at each interface. The interfacial moment alternates between the 1μB/interface Mn ion for even CaMnO3 layers and the 0.5μB/interface Mn ion for odd CaMnO3 layers. This modulation, combined with the exchange bias, suggests the presence of a modulating interlayer coupling between neighboring ferromagnetic interfaces via the antiferromagnetic CaMnO3 layers.

  4. Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Riascos, H.; Duque, J. S.; Orozco, S.

    2017-01-01

    ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

  5. Tensile Strain Effects on the Magneto-transport in Calcium Manganese Oxide Thin Films: Comparison with its Hole-doped Counterpart

    NASA Astrophysics Data System (ADS)

    Lawson, Bridget; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Ferrone, Natalie; Houston, David; Yong, Grace; Kolagani, Rajeswari

    Magnetoresistance properties of the epitaxial thin films of doped rare earth manganites are known to be influenced by the effect of bi-axial strain induced by lattice mismatch with the substrate. In hole-doped manganites, the effect of both compressive and tensile strain is qualitatively consistent with the expected changes in unit cell symmetry from cubic to tetragonal, leading to Jahn-Teller strain fields that affect the energy levels of Mn3 + energy levels. Recent work in our laboratory on CaMnO3 thin films has pointed out that tetragonal distortions introduced by tensile lattice mismatch strain may also have the effect of modulating the oxygen content of the films in agreement with theoretical models that propose such coupling between strain and oxygen content. Our research focuses on comparing the magneto-transport properties of hole-doped manganite LaCaMnO3 thin films with that of its electron doped counter parts, in an effort to delineate the effects of oxygen stoichiometry changes on magneto-transport from the effects of Jahn-Teller type strain. Towson University Office of Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grant from the Fisher College of Science and Mathematics, Seed Funding Grant from the School of Emerging technologies and the NSF Grant ECCS 112856.

  6. Tunneling Evidence of Half-Metallic Ferromagnetism in La(0.7)Ca(0.3)MnO(3)

    NASA Technical Reports Server (NTRS)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1997-01-01

    Direct experimental evidence of half-metallic density of states (DOS) is observed by scanning tunneling spectroscopy on ferromagnetic La(0.7)Ca(0.3)MnO(3) which exhibits colossal magnetoresistance (SMR).

  7. Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-δ thin films

    NASA Astrophysics Data System (ADS)

    Gauquelin, Nicolas; Zhang, Hao; Zhu, Guozhen; Wei, John Y. T.; Botton, Gianluigi A.

    2018-05-01

    We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-δ (YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity.

  8. Colossal Terahertz Magnetoresistance at Room Temperature in Epitaxial La0.7Sr0.3MnO3 Nanocomposites and Single-Phase Thin Films.

    PubMed

    Lloyd-Hughes, J; Mosley, C D W; Jones, S P P; Lees, M R; Chen, A; Jia, Q X; Choi, E-M; MacManus-Driscoll, J L

    2017-04-12

    Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7 Sr 0.3 MnO 3 . At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. The VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.

  9. Tuning Magnetic Order in Transition Metal Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Grutter, Alexander John

    growth on (110) and (111) oriented substrates we explore the effects of different distortion symmetries on SrRuO3 and demonstrate the first reported strain induced transition to a high-spin state of Ru 4+. Finally, we examine the effects of strain on SrRuO3 thin films and demonstrate a completely reversible universal out-of-plane magnetic easy axis on films grown on different substrate orientations. Having demonstrated the ability to tune nearly every magnetic parameter of SrRuO 3 through strain, we turn to magnetic properties at interfaces. We study the emergent interfacial ferromagnetism in superlattices of the paramagnetic metal CaRuO3 and the antiferromagnetic insulator CaMnO3 and demonstrate that the interfacial ferromagnetic layer in this system is confined to a single unit cell of CaMnO3 at the interface. We discuss the remarkable oscillatory dependence of the saturated magnetic moment on the thickness of the CaMnO3 layers and explore mechanisms by which this oscillation may be stabilized. We find long range coherence of the antiferromagnetism of the CaMnO3 layers across intervening layers of paramagnetic CaRuO3. Finally, we utilize the system of LaNiO3/CaMnO3 to separate the effects of intermixing and interfacial electronic reconstruction and conclusively demonstrate intrinsic interfacial ferromagnetism at the interface between a paramagnetic metal and an antiferromagnetic insulator. We find that the emergent ferromagnetism is stabilized through interfacial double exchange and that the leakage of conduction electrons from the paramagnetic metal to the antiferromagnetic insulator is critical to establishing the ferromagnetic ground state.

  10. Magneto-transport and magneto-optical studies on SnO2 transparent semiconducting thin films alloyed with Mn over a wide range of concentration

    NASA Astrophysics Data System (ADS)

    Bagheri Mohagheghi, M. M.; Tabatabai Yazdi, Sh.; Mousavi, M.

    2018-03-01

    In this work, Mn-alloyed tin oxide transparent thin films with different Mn concentrations up to 60 at% were prepared via the spray pyrolysis method, and their structural, magneto-optical, and magneto-transport properties were studied. The results show that all the deposited films are polycrystalline with the tetragonal rutile structure. The unit cell volume of Sn1- x Mn x O2 films was found to be minimum at the Mn concentration of x = 0.15 indicating to two different mechanisms for Mn addition in the crystal lattice of tin oxide. For the films with Mn concentrations less than 15%, substitutional doping is the working mechanism, while for more Mn concentrations, interstitial one is predominant. A critical Mn concentration about that observed for the structural properties of the films (i.e., x = 0.15) was revealed for their magnetoresistance and magneto-optical properties, as well. This suggests a correlation between the structural and magnetic behaviors of the deposited SnO2:Mn films.

  11. Thin film nano-photocatalyts with low band gap energy for gas phase degradation of p-xylene: TiO2 doped Cr, UiO66-NH2 and LaBO3 (B  =  Fe, Mn, and Co)

    NASA Astrophysics Data System (ADS)

    Loc Luu, Cam; Thuy Van Nguyen, Thi; Nguyen, Tri; Nguyen, Phung Anh; Hoang, Tien Cuong; Ha, Cam Anh

    2018-03-01

    By dip-coating technique the thin films of nano-photocatalysts TiO2, Cr-doped TiO2, LaBO3 perovskites (B  =  Fe, Mn, and Co) prepared by sol-gel method, and UiO66-NH2 prepared by a solvothermal were obtained and employed for gas phase degradation of p-xylene. Physicochemical characteristics of the catalysts were examined by the methods of BET, SEM, TEM, XRD, FT-IR, TGA, Raman and UV-vis spectroscopies. The thickness of film was determined by a Veeco-American Dektek 6M instrument. The activity of catalysts was evaluated in deep photooxidation of p-xylene in a microflow reactor at room temperature with the radiation sources of a UV (λ  =  365 nm) and LED lamps (λ  =  400-510 nm). The obtained results showed that TiO2 and TiO2 doped Cr thin films was featured by an anatase phase with nanoparticles of 10-100 nm. Doping TiO2 with 0.1%mol Cr2O3 led to reduce band gap energy from 3.01 down to 1.99 eV and extend the spectrum of photon absorption to the visible region (λ  =  622 nm). LaBO3 perovkite thin films were also featured by a crystal phase with average particle nanosize of 8-40 nm, a BET surface area of 17.6-32.7 m2 g-1 and band gap energy of 1.87-2.20 eV. UiO66-NH2 was obtained in the ball shape of 100-200 nm, a BET surface area of 576 m2 g-1 and a band gap energy of 2.83 eV. The low band gap energy nano-photocatalysts based on Cr-doped TiO2 and LaBO3 perovskites exhibited highly stable and active for photo-degradation of p-xylene in the gas phase under radiation of UV-vis light. Perovskite LaFeO3 and Cr-TiO2 thin films were the best photocatalysts with a decomposition yield being reached up to 1.70 g p-xylene/g cat.

  12. Enhanced Thermoelectric Response of Ca0.96Dy0.02Re0.02MnO3 Ceramics (Re = La, Nd, Sm) at High Temperature

    NASA Astrophysics Data System (ADS)

    Zhu, Yuanhu; Wang, Chunlei; Su, Wenbin; Liu, Jian; Li, Jichao; Du, Yanling; Zhang, Xinhua; Qin, Yalin; Mei, Liangmo

    2015-01-01

    Perovskite-type Ca0.98Dy0.02MnO3, Ca0.96Dy0.04MnO3, and Ca0.96Dy0.02 Re0.02MnO3 (Re = La, Nd, Sm) were prepared by solid-state reaction, and their thermoelectric properties were evaluated between 300 and 1000 K. All were single-phase, with an orthorhombic structure, and had metal-like temperature dependence of resistivity and Seebeck coefficient. The second doping element, Re = La, Nd, or Sm, introduced a larger carrier concentration, leading to a decrease in both resistivity and Seebeck coefficient. This contributed to lower thermal conductivity by introducing a second element into the system. The highest figure of merit, 0.20, was obtained for Re = La at 973 K; this was an increase of almost 100% compared with Ca0.98Dy0.02MnO3 at the same temperature.

  13. Tuning the magnetic properties of LaCoO3 thin films by epitaxial strain

    NASA Astrophysics Data System (ADS)

    Fuchs, D.; Arac, E.; Pinta, C.; Schuppler, S.; Schneider, R.; v. Löhneysen, H.

    2008-01-01

    Ferromagnetic order can be induced in LaCoO3 (LCO) thin films by epitaxial strain. Here, we show that the magnetic properties can be “tuned” by epitaxial strain imposed on LCO thin films by the epitaxial growth on various substrate materials, i.e., (001) oriented SrLaAlO4 , LaAlO3 , SrLaGaO4 , (LaAlO3)0.3(Sr2AlTaO6)0.7 , and SrTiO3 . The lattice mismatch at room temperature of the in-plane lattice parameters between the substrate, as , and bulk LCO, ab , ranges from -1.31% to +2.63% . Single-phase, ⟨001⟩ oriented LCO thin films were grown by pulsed laser deposition on all these substrates. Due to the difference of the thermal-expansion coefficients between LCO and the substrates, the films experience an additional tensile strain of about +0.3% during the cooling process after the deposition at Ts=650°C . The film lattice parameters display an elastic behavior, i.e., an increase of the in-plane film lattice parameter with increasing as . From the ratio between the out-of-plane and in-plane strain, we obtain a Poisson ratio of ν≈1/3 . All films show a ferromagnetic transition as determined from magnetization measurements. The magnetization increases strongly with increasing tensile strain, whereas the transition temperature TC after a rapid initial rise appears to saturate at TC≈85K above a=3.86Å . The effective magnetic moment μeff in the paramagnetic state increases almost linearly as a function of the mean lattice parameter ⟨a⟩ , indicating an enhanced population of higher spin states, i.e., intermediate- or high-spin states. The experimental results are discussed in terms of a decrease of the octahedral-site rotation with increasing tensile strain.

  14. Magnetic order and polaron formation in hole-doped LaMnO_3

    NASA Astrophysics Data System (ADS)

    Terashita, Hirotoshi; Neumeier, John J.; Mitchell, J. F.

    2003-03-01

    We report the magnetic properties of hole-doped La_1-xCa_xMnO3 (0 <= x <= 0.14). A ferromagnetic saturation moment M_sat develops linearly with Mn^4+ concentration. The slope of M_sat versus Mn^4+ concentration is 27 μ_B/(Mn-ion) per substututed Mn^4+, which is about 3 times larger in magnitude than that of electron-doped CaMnO3 [1]. This result suggests differences in the formation of magnetic polarons of the A-type antiferromagnet LaMnO3 versus that of the G-type antiferromagnet CaMnO_3. Supported by NSF Grant DMR9982834 and the USDOE under contract W-31-109-ENG-38. [1] J. J. Neumeier and J. L. Cohn, Phys. Rev. B 61, 14319 (2000).

  15. Effect of substrate temperature on magnetic properties of MnFe2O4 thin films

    NASA Astrophysics Data System (ADS)

    Rajagiri, Prabhu; Sahu, B. N.; Venkataramani, N.; Prasad, Shiva; Krishnan, R.

    2018-05-01

    MnFe2O4 thin films were pulsed laser deposited on to quartz substrate from room temperature (RT) to 650 °C in a pure argon environment. Temperature dependence of spontaneous magnetization (4πMS) was measured on these films from 10 K to 350 K using a vibrating sample magnetometer. Ferromagnetic resonance (FMR) study was also carried out at 300 K. The exchange stiffness constant (D) values were obtained by fitting the 4πMS data to the Bloch's equation. The D values of the films thus found decreases while the 4πMS value increases, though non-monotonically, with the increase in TS and tend to reach bulk values at TS = 650 °C. The variation in D and 4πMS values of the films are explained based on the degree of inversion and oxidation state of cations in thin films.

  16. Optimisation of growth of epitaxial Tl 2Ba 2Ca 1Cu 2O 8 superconducting thin films for electronic device applications

    NASA Astrophysics Data System (ADS)

    Michael, Peter C.; Johansson, L.-G.; Bengtsson, L.; Claeson, T.; Ivanov, Z. G.; Olsson, E.; Berastegui, P.; Stepantsov, E.

    1994-12-01

    Epitaxial thin films of Tl 2Ba 2Ca 1Cu 2O 8 (Tl-2212) superconductor have been grown on single crystal (100) lanthanum aluminate (LaAlO 3) substrates by a two stage process: laser ablation of a BaCaCuO (0212) sintered target and post-deposition anneal ex-situ in a thallium environment. The films are c-axis oriented with in-plane epitaxy as determined by x-ray diffraction (XRD θ-2θ and φ-scans). Superconducting transition temperatures as high as 105.5K have been obtained both from four-probe resistance and a.c. magnetic susceptibility measurements. Film morphology and chemical composition have been assessed by scanning electron microscopy (SEM) and energy dispersive x-ray analysis (EDX). Sensitivity of the precursor film to environmental exposure has proven to be a determining factor in the reproducibility of film growth characteristics. The effect of oxygen partial pressure and substrate temperature used in the precursor film synthesis, as well as the thallium annealing temperature and duration, on the growth of Tl-2212 thin films is reported.

  17. Size-driven magnetic transitions in La1/3Ca2/3MnO3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Markovich, V.; Fita, I.; Wisniewski, A.; Mogilyansky, D.; Puzniak, R.; Titelman, L.; Gorodetsky, G.

    2010-09-01

    Magnetic properties of electron-doped La1/3Ca2/3MnO3 manganite nanoparticles with average particle size ranging from 12 to 42 nm, prepared by the glycine-nitrate method, have been investigated in temperature range 5-300 K and in magnetic fields up to 90 kOe. Reduction in the particle size suppresses antiferromagnetism and decreases the Néel temperature. In contrast to bulk crystals, the charge ordering does not occur in all studied nanoparticles, while a weak ferromagnetism appears above 200 K. Low temperature magnetic hysteresis loops indicate upon exchange bias effect displayed by horizontal and vertical shifts in field cooled processes. The spontaneous and remanent magnetization at low temperature shows a relatively complex variation with particle size. The size-induced structural/magnetic disorder drives the La1/3Ca2/3MnO3 nanoparticles to a pronounced glassy behavior for the smallest 12 nm particles, as evidenced by large difference between zero field cooled and field cooled magnetization, frequency dependent ac-susceptibility, as well as characteristic slowing down in the spin dynamics. Time evolution of magnetization recorded in magnetic fields after field cooling to low temperatures exhibits pronounced relaxation and a very noisy behavior that may be caused by formation of some collective states. Magnetic properties of the nanoparticle samples are compared with those of La0.2Ca0.8MnO3 nanoparticles. These results shed some light on the coupling between charges and spin degrees of freedom in antiferromagnetic manganite nanoparticles.

  18. Intrinsic and extrinsic dielectric responses of CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Rubinger, C. P. L.; Moreira, R. L.; Ribeiro, G. M.; Matinaga, F. M.; Autier Laurent, S.; Mercey, B.; Lobo, R. P. S. M.

    2011-10-01

    CaCu3Ti4O12 thin films were epitaxially grown on (001) LaAlO3 substrates by pulsed laser deposition under optimized growth conditions. The crystal structure and sample morphology were characterized by x-ray diffraction, AFM, TEM, ellipsometry, and Raman spectroscopy. The dielectric responses of the films were investigated in a large temperature range (5 to 375 K) by infrared reflectivity and impedance spectroscopies. The films exhibited a colossal dielectric response, with the dielectric permittivity reaching 104 at 100 Hz. The results obtained in a broad frequency range allowed us to investigate the behavior of intrinsic and extrinsic dielectric responses of this material. The room temperature centrosymmetrical cubic structure remains stable down to 5 K, though softening of the lower frequency infrared phonon modes indicates an incipient ferroelectric character. The radio frequency dielectric response reveals two relaxations of extrinsic origin, a primary higher frequency relaxation responsible for the colossal dielectric behavior and a secondary one of lower frequency. The activation energies of these processes are compatible with the presence of shallow defect levels created by oxygen vacancies.

  19. Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

    NASA Astrophysics Data System (ADS)

    Abazari, M.; Safari, A.

    2010-12-01

    Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

  20. Effect of composition and strain on the electrical properties of LaNiO3 thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Mingwei; Komissinskiy, Philipp; Radetinac, Aldin; Vafaee, Mehran; Wang, Zhanjie; Alff, Lambert

    2013-09-01

    The Ni content of LaNi1-xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.

  1. Mn-doped Ge self-assembled quantum dots via dewetting of thin films

    NASA Astrophysics Data System (ADS)

    Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Karaman, Ibrahim; Lee, Jeong Yong

    2017-03-01

    In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

  2. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    He, Junfeng; Shafer, Padraic; Mion, Thomas R.

    Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

  3. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

    DOE PAGES

    He, Junfeng; Shafer, Padraic; Mion, Thomas R.; ...

    2016-03-01

    Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

  4. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    DOE PAGES

    Venkatesh, S.; Baras, A.; Lee, J. -S.; ...

    2016-03-24

    Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetismmore » in doped/un-doped ZnO.« less

  5. Effects of Nb doping level on the electronic transport, photoelectric effect and magnetoresistance across La0.5Ca0.5MnO3/Nb:SrTiO3 junctions

    NASA Astrophysics Data System (ADS)

    Wang, J. F.; Jiang, Y. C.; Chen, M. G.; Gao, J.

    2013-12-01

    Heterojunctions composed of La0.5Ca0.5MnO3 and Nb doped SrTiO3 were fabricated, and the effects of the Nb doping level on their electronic transport, photoelectric effect, and magnetoresistance were investigated. A lower doping concentration of Nb led to better rectifying properties and higher open circuit voltages. The I-V curves for La0.5Ca0.5MnO3/0.7 wt. % Nb-SrTiO3 showed a negligible response to magnetic fields for all temperatures, whereas La0.5Ca0.5MnO3/0.05 wt. % Nb-SrTiO3 exhibited distinct magnetoresistance, which depended on both the bias voltage and temperature. These results are discussed with the assistance of conventional semiconductor theories.

  6. Charge ordered ferromagnetic phase in La_0.5Ca_0.5MnO_3

    NASA Astrophysics Data System (ADS)

    Mathur, Neil

    2003-03-01

    Charge order and ferromagnetism should be mutually exclusive in the manganites, because ferromagnetism in these materials is normally promoted by delocalised electrons. Surprisingly, a phase that is both strongly charge ordered and fully ferromagnetic is observed [1] at 90 K in La_0.5Ca_0.5MnO_3, using Fresnel imaging, dark-field TEM and electron holography. This new phase coexists with the two low temperature phases that were already known to coexist in La_0.5Ca_0.5MnO_3. (One of these expected phases is ferromagnetic but not charge-ordered, the other is charge-ordered but not ferromagnetic.) Strain fields could be responsible for the novel microscopic texture presented here - perhaps creating conditions in which nearest neighbour hopping is sufficient to promote ferromagnetism. Similarly, strain fields are believed to cause sub-micron phase separation in the manganites. It therefore seems that the manganites can adapt to their environments over a wide range of length scales [2]. [1] http://xxx.lanl.gov/abs/cond-mat/0209436 [2] Neil Mathur and Peter Littlewood, Physics Today, early 2003.

  7. Spin Wave Resonances in La_0.67Ba_0.33MnO_3

    NASA Astrophysics Data System (ADS)

    Lofland, S. E.; Dominguez, M.; Tyagi, S. D.; Bhagat, S. M.; Kwon, C.; Robson, M. C.; Sharma, R. P.; Ramesh, R.; Venkatesan, T.

    1996-03-01

    Thin ( ~ 110 nm thick) films of La_0.67Ba_0.33MnO3 (LBMO) were prepared by pulsed laser deposition on LaAlO3 substrates. Some films were grown directly onto LaAlO3 while other films were made by first creating a ~ 80 nm thick buffer layer of SrTiO3 (STO) and then capped with a 20 nm thick layer of STO. X-ray and RBS measurements showed the films to be of high crystalline quality. Film thickness was determined by RBS. Spin wave resonance (SWR) measurements were performed at both 10 and 36 GHz. In both types of films Portis (equally spaced) modes were observed. This indicated a non-uniform magnetization which has a parabolic spatial distribution. However, certain tri-layer films showed Kittel modes which follow the n^2 dependence of the mode number n on the resonance field. From the mode separation and the thickness, we calculate the spin stiffness D(0) to be 47 ± 10 meVÅWith this value of D and the magnetization M, we estimate a spatial variation of the magnetization of ~ 20% for those films which showed Portis modes.

  8. Colossal terahertz magnetoresistance at room temperature in epitaxial La 0.7Sr 0.3MnO 3 nanocomposites and single-phase thin films

    DOE PAGES

    Lloyd-Hughes, James; Mosley, C. D. W.; Jones, S. P. P.; ...

    2017-03-13

    Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7Sr 0.3MnO 3. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: themore » mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. As a result, the VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.« less

  9. Angular distribution of species in pulsed laser deposition of LaxCa1-xMnO3

    NASA Astrophysics Data System (ADS)

    Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

    2015-05-01

    The angular distribution of species from a La0.4Ca0.6MnO3 target irradiated with a 248 nm nanosecond pulsed laser was investigated by Rutherford backscattering spectrometry for four different Ar pressures. The film thickness angular distribution was also analyzed using profilometry. Depending on the background gas pressure, the target to substrate distance, and the angular location the film thickness and composition varies considerably. In particular the film composition could vary by up to 17% with respect to the composition of the target material.

  10. Effect of strain on structure and charge order transitions in epitaxial Bi0.4Ca0.6MnO3 films on perovskite (001) and (011) substrates

    NASA Astrophysics Data System (ADS)

    Kim, Dae Ho; Christen, Hans M.; Varela, Maria; Lee, Ho Nyung; Lowndes, Douglas H.

    2006-05-01

    The effect of epitaxial strain on the charge order (CO) transition in Bi0.4Ca0.6MnO3 films was studied by varying the strain's strength and symmetry via the use of SrTiO3 and LaAlO3 substrates having different crystallographic orientations. The film on pseudocubic (001) LaAlO3, under symmetric compressive strain, exhibits a clear CO transition. In the film on a (001) SrTiO3 substrate, under symmetric tensile strain, highly segregated line-shaped features in the Bi distribution are seen in Z-contrast scanning transmission microscopy, accompanied by a strongly broadened CO transition. The asymmetric tensile stress on (011) SrTiO3 results in an apparent compressive strain state with a deviation from tetragonality (i.e., γ ≠90°), accompanied by the sharpest CO transition. These comparisons illustrate the importance of considering both the strength and symmetry of epitaxial strain.

  11. Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain

    NASA Astrophysics Data System (ADS)

    Lee, Hyeon Jun; Guo, Er-Jia; Kwak, Jeong Hun; Hwang, Seung Hyun; Dörr, Kathrin; Lee, Jun Hee; Young Jo, Ji

    2017-01-01

    The tetragonality (c/a) of a PbZr0.2Ti0.8O3 (PZT) thin film on La0.7Sr0.3MnO3/ 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Our results demonstrate that the tetragonality of the PZT thin film plays a critical role in determining d33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.

  12. Chemically synthesis and characterization of MnS thin films by SILAR method

    NASA Astrophysics Data System (ADS)

    Yıldırım, M. Ali; Yıldırım, Sümeyra Tuna; Cavanmirza, İlke; Ateş, Aytunç

    2016-03-01

    MnS thin films were synthesized on glass substrates using SILAR method. The film thickness effect on structural, morphological, optical and electrical properties of the films was investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with β-MnS structure and were covered well on glass substrates. The bandgap and resistivity values of the films decreased from 3.39 eV to 2.92 eV and from 11.84 × 106 to 2.21 × 105 Ω-cm as the film thickness increased from 180 to 350 nm, respectively. The refractive index (n) and dielectric constants (ɛo, ɛ∞) values were calculated.

  13. The synthesis of multifunctional porous honey comb-like La2O3 thin film for supercapacitor and gas sensor applications.

    PubMed

    Yadav, A A; Lokhande, A C; Pujari, R B; Kim, J H; Lokhande, C D

    2016-12-15

    The porous honey comb-like La 2 O 3 thin films have been synthesized using one step spray pyrolysis method. The influence of sprayed solution quantity on properties of La 2 O 3 thin films is studied using X-ray diffraction, Fourier transform spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, optical absorption and Brunauer-Emmett-Teller techniques. Morphology of La 2 O 3 electrode is controlled with sprayed solution quantity. The supercapacitive properties of La 2 O 3 thin film electrode are investigated using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance techniques. The La 2 O 3 film electrode exhibited the specific capacitance of the 166Fg -1 with 85% stability for the 3000 cycles. The La 2 O 3 film electrode exhibited sensitivity of 68 at 523K for 500ppm CO 2 gas concentration. The possible CO 2 sensing mechanism is discussed. Copyright © 2016 Elsevier Inc. All rights reserved.

  14. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  15. Magnetic and Magnetocaloric Properties of Ca0.97La0.03MnO3 Manganites

    NASA Astrophysics Data System (ADS)

    Gong, G. D.; Hu, P. F.; Li, Y.; Kim, D. H.; Liu, C. L.; Phan, T. L.; Ho, T. A.; Yu, S. C.; Telegin, A.; Naumov, S. V.

    2016-07-01

    In spite of many previous studies on electron-doped CaMnO3 perovskite manganites, detailed investigations into the influence of low-doping concentrations on their magnetic and magnetocaloric (MC) properties have not been carried out yet. Additionally, there is still the lack of the comparison between single-crystal (SC) and polycrystalline (PC) materials. Dealing with these problems, we prepared orthorhombic Ca0.97La0.03MnO3 SC and PC samples. Magnetization measurements versus the temperature and magnetic field revealed remarkable differences in the magnetic property, particularly around the antiferromagnetic/ferromagnetic-paramagnetic phase-transition region. The analyses of the magnetization versus magnetic field, M( H), data indicated a weak MC effect with magnetic-entropy changes less than 0.1 J kg-1 K-1 for an applied field interval H = 10 kOe because ferromagnetic interactions between Mn3+ and Mn4+ ions are insignificant. The differences in the magnetic and MC properties of the SC and PC samples are ascribed to the effects of grain boundary, magnetic anisotropy, and nonstoichiometry in oxygen.

  16. Fermi Level shifting, Charge Transfer and Induced Magnetic Coupling at La0.7Ca0.3MnO3/LaNiO3 Interface

    PubMed Central

    Ning, Xingkun; Wang, Zhanjie; Zhang, Zhidong

    2015-01-01

    A large magnetic coupling has been observed at the La0.7Ca0.3MnO3/LaNiO3 (LCMO/LNO) interface. The x-ray photoelectron spectroscopy (XPS) study results show that Fermi level continuously shifted across the LCMO/LNO interface in the interface region. In addition, the charge transfer between Mn and Ni ions of the type Mn3+ − Ni3+ → Mn4+ − Ni2+ with the oxygen vacancies are observed in the interface region. The intrinsic interfacial charge transfer can give rise to itinerant electrons, which results in a “shoulder feature” observed at the low binding energy in the Mn 2p core level spectra. Meanwhile, the orbital reconstruction can be mapped according to the Fermi level position and the charge transfer mode. It can be considered that the ferromagnetic interaction between Ni2+ and Mn4+ gives rise to magnetic regions that pin the ferromagnetic LCMO and cause magnetic coupling at the LCMO/LNO interface. PMID:25676088

  17. Interfacial Ferromagnetism and Exchange Bias in CaRuO3/CaMnO3 Superlattices

    DTIC Science & Technology

    2012-11-07

    microscopy and electron energy loss spectroscopy indicate that the difference in magnitude of the Mn valence states between the center of the CaMnO3 layer...CaMnO3 thickness dependence of the exchange bias field together indicate that the interfacial 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13...superlattices of CaRuO3/CaMnO3 that arises in one unit cell at the interface. Scanning transmission electron microscopy and electron energy loss

  18. Operando investigation of Au-MnO x thin films with improved activity for the oxygen evolution reaction

    DOE PAGES

    Frydendal, Rasmus; Seitz, Linsey C.; Sokaras, Dimosthenis; ...

    2017-01-20

    The electrochemical splitting of water holds great potential as a method for producing clean fuels by storing electricity from intermittent energy sources. The efficiency of such a process would be greatly facilitated by incorporating more active catalysts based on abundant materials for the oxygen evolution reaction. Manganese oxides are promising as catalysts for this reaction. Recent reports show that their activity can be drastically enhanced when modified with gold. Herein, we investigate highly active mixed Au-MnO x thin films for the oxygen evolution reaction, which exhibit more than five times improvement over pure MnO x. These films are characterized withmore » operando X-ray Absorption Spectroscopy, which reveal that Mn assumes a higher oxidation state under reaction conditions when Au is present. As a result, the magnitude of the enhancement is correlated to the size of the Au domains, where larger domains are the more beneficial.« less

  19. Multiferroic magnetoelectric coupling effect of bilayer La1.2Sr1.8Mn2O7/PbZr0.3Ti0.7O3 complex thin film

    NASA Astrophysics Data System (ADS)

    Liang, K.; Zhou, P.; Ma, Z. J.; Qi, Y. J.; Mei, Z. H.; Zhang, T. J.

    2017-05-01

    Magnetoelectric (ME) coupling effect of 2-2-type ferromagnetic/ferroelectric bi-layer multiferroic epitaxial thin film (La1.2Sr1.8Mn2O7/PbZr0.3Ti0.7O3, LSMO/PZT) on SrRuO3 (SRO) substrate is investigated systematically by using Landau-Ginzburg-Devonshire (LGD) thermodynamic theory and modified constitutive equations. The calculating results clarify the detail relationships between ME coupling response and the residual strain, the volume fraction of constituent phases, the interface coupling coefficients, the magnetic field and the temperature. It also shows that improved ME coupling response can be modulated by these parameters. External magnetic fields (H1) induced ME coupling effect could be enhanced around Curie Temperature (Tc) of ferromagnetic phase and ME voltage coefficient (αE31) approaches a maximum at H1 ∼ 4.5 kOe near Tc. The remarkable variations of ME coupling response can be used to provide useful guidelines on the design of multifunctional devices.

  20. Magnetocaloric effect and its modulation by electric field in La0.325Pr0.3Ca0.375MnO3 films grown on (0 1 1)-PMN-PT substrates

    NASA Astrophysics Data System (ADS)

    Qiao, K. M.; Li, J.; Liu, Y.; Kuang, H.; Wang, J.; Hu, F. X.; Sun, J. R.; Shen, B. G.

    2018-06-01

    In this paper, we have investigated the magnetocaloric effect (MCE) and its modulation by electric field in La0.325Pr0.3Ca0.375MnO3 (LPCMO) films grown on (0 1 1)-oriented PMN-PT substrates. As a typical perovskite manganite with phase separation, the LPCMO bulk shows a considerable MCE, but the MCE of the LPCMO films has never been investigated. We found that the LPCMO films exhibit a MCE over a wide temperature range. A modulation of magnetization by electric field has been observed in the temperature dependent (M-T) and magnetic field dependent (M-H) curves. As a result, enhanced magnetic entropy change and refrigeration capacity by about 4% under an electric field of +6 kV/cm has been demonstrated.

  1. Controlling Spatial Confinement Effects in La0.3Pr0.4Ca0.3MnO3 Microbridges via Post Ar and Air Annealing

    NASA Astrophysics Data System (ADS)

    Jeon, Jaechun; Jung, Jan; Chow, Kim H.

    2017-08-01

    We report the effects of post Ar and air annealing of La0.3Pr0.4Ca0.3MnO3 microbridges which do not initially show spatial confinement effects. The removal or addition of oxygen via the post annealing changes the sizes and distribution of the metallic and insulating phase domains within these films and can create spatial confinement effects such as percolation induced resistance jumps and tunneling magnetoresistance.

  2. Strain-tuned enhancement of ferromagnetic TC to 176 K in Sm-doped BiMnO3 thin films and determination of magnetic phase diagram.

    PubMed

    Choi, Eun-Mi; Kleibeuker, Josée E; MacManus-Driscoll, Judith L

    2017-03-03

    BiMnO 3 is a promising multiferroic material but it's ferromagnetic T C is well below room temperature and the magnetic phase diagram is unknown. In this work, the relationship between magnetic transition temperature (T C ) and the substrate induced (pseudo-) tetragonal distortion (ratio of out-of-plane to in-plane lattice parameters, c/a) in BiMnO 3 thin films, lightly doped to optimize lattice dimensions, was determined. For c/a > 0.99, hidden antiferromagnetism was revealed and the magnetisation versus temperature curves showed a tail behaviour, whereas for c/a < 0.99 clear ferromagnetism was observed. A peak T C of up to 176 K, more than 70 K higher than for bulk BiMnO 3 , was achieved through precise strain tuning. The T C was maximised for strong tensile in-plane strain which produced weak octahedral rotations in the out-of-plane direction, an orthorhombic-like structure, and strong ferromagnetic coupling.

  3. Synthesis and microstructural TEM investigation of CaCu 3Ru 4O 12 ceramic and thin film

    NASA Astrophysics Data System (ADS)

    Brizé, Virginie; Autret-Lambert, Cécile; Wolfman, Jérôme; Gervais, Monique; Gervais, François

    2011-10-01

    CaCu 3Ru 4O 12 (CCRO) is a conductive oxide having the same structure as CaCu 3Ti 4O 12 (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO 4 substrate. Structural and physical properties of bulk CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation.

  4. Critical current density of TlBa 2Ca 2Cu 3O 9 thin films on MgO (100) in magnetic fields

    NASA Astrophysics Data System (ADS)

    Piehler, A.; Ströbel, J. P.; Reschauer, N.; Löw, R.; Schönberger, R.; Renk, K. F.; Kraus, M.; Daniel, J.; Saemann-Ischenko, G.

    1994-04-01

    We report on the critical current density of TlBa 2Ca 2Cu 3O 9 thin films on (100) MgO substrates in magnetic fields. Single- phase and highly c-axis oriented thin films were prepared by laser ablation in combination with thermal evaporation of Tl 2O 3. Scanning electron microscope investigations indicated a flat plate-like microstructure and DC magnetization measurements showed the onset of superconductivity at ∼ 115 K. The critical current density jc was determined from magnetization cycles. Typical values of jc were 9 × 10 5 A/cm 2 at 6 K and 2.5 × 10 5 A/cm 2 at 77 K. In a magnetic field to 1 T applied parallel to the c-axis the critical current densities were 3 × 10 5 A/cm 2 at 6 K and 3 × 10 3 A/cm 2 at 77 K. The decrease of jc at higher magnetic fields is discussed and attributed to the microstructure of the TlBa 2Ca 2Cu 3O 9 thin films.

  5. Evidence of martensitic phase transitions in magnetic Ni-Mn-In thin films

    NASA Astrophysics Data System (ADS)

    Sokolov, A.; Zhang, Le; Dubenko, I.; Samanta, T.; Stadler, S.; Ali, N.

    2013-02-01

    Ni50Mn35In15 Heusler alloy thin films (with thicknesses of about 10 nm) have been grown on single crystal MgO and SrTiO3 (STO) (100) substrates using a laser-assisted molecular beam epitaxy method. Films of mixed austenitic and martensitic phases and of pure martensitic phase have been detected for those grown on MgO and STO substrates, respectively. Thermomagnetic curves were measured using a SQUID magnetometer and are consistent with those of off-stoichiometric In-based bulk Heusler alloys, including a martensitic transition at T = 315 K for films grown on MgO. The differences in the properties of the films grown on MgO and STO are discussed.

  6. Interfacial Control of Ferromagnetism in Ultrathin La0.67Ca0.33MnO3 Sandwiched between CaRu1-xTixO3 (x = 0-0.8) Epilayers.

    PubMed

    Chen, Binbin; Chen, Pingfan; Xu, Haoran; Jin, Feng; Guo, Zhuang; Lan, Da; Wan, Siyuan; Gao, Guanyin; Chen, Feng; Wu, Wenbin

    2016-12-21

    Controlling functionalities in oxide heterostructures remains challenging for the rather complex interfacial interactions. Here, by modifying the interface properties with chemical doping, we achieve a nontrivial control over the ferromagnetism in ultrathin La 0.67 Ca 0.33 MnO 3 (LCMO) layer sandwiched between CaRu 1-x Ti x O 3 [CRTO(x)] epilayers. The Ti doping suppresses the interfacial electron transfer from CRTO(x) to LCMO side; as a result, a steadily decreased Curie temperature with increasing x, from 262 K at x = 0 to 186 K at x = 0.8, is observed for the structures with LCMO fixed at 3.2 nm. Moreover, for more insulating CRTO(x ≥ 0.5), the electron confinement induces an interfacial Mn-e g (x 2 -y 2 ) orbital order in LCMO which further attenuates the ferromagnetism. Also, in order to characterize the heterointerfaces, for the first time the doping- and thickness-dependent metal-insulator transitions in CRTO(x) films are examined. Our results demonstrate that the LCMO/CRTO(x) heterostructure could be a model system for investigating the interfacial multiple interactions in correlated oxides.

  7. Superconductivity of Rock-Salt Structure LaO Epitaxial Thin Film.

    PubMed

    Kaminaga, Kenichi; Oka, Daichi; Hasegawa, Tetsuya; Fukumura, Tomoteru

    2018-06-06

    We report a superconducting transition in a LaO epitaxial thin film with the superconducting transition onset temperature ( T c ) at around 5 K. This T c is higher than those of other lanthanum monochalcogenides and opposite to their chemical trend: T c = 0.84, 1.02, and 1.48 K for LaX (X = S, Se, Te), respectively. The carrier control resulted in a dome-shaped T c as a function of electron carrier density. In addition, the T c was significantly sensitive to epitaxial strain in spite of the highly symmetric crystal structure. This rock-salt superconducting LaO could be a building block to design novel superlattice superconductors.

  8. Synthesis and microstructural TEM investigation of CaCu{sub 3}Ru{sub 4}O{sub 12} ceramic and thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brize, Virginie; STMicroelectronics, 16 rue P and M Curie, 37001 Tours; Autret-Lambert, Cecile, E-mail: cecile.autret-lambert@univ-tours.fr

    2011-10-15

    CaCu{sub 3}Ru{sub 4}O{sub 12} (CCRO) is a conductive oxide having the same structure as CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO{sub 4} substrate. Structural and physical properties of bulkmore » CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation. - Graphical Abstract: Structure of CaCu{sub 3}Ru{sub 4}O{sub 12} showing the RuO{sub 6} octahedra and the square planar environment for Cu{sup 2+}. Highlights: > In this study, we investigate the structural properties and microstructure of ceramics CaCu{sub 3}Ru{sub 4}O{sub 12}. > We study the conduction properties of polycrystalline material. > Then we synthesize the conductive thin film which is deposited on a high K material with the same structure (CaCu{sub 3}Ti{sub 4}O{sub 12}).« less

  9. Synthesis and structural studies on cerium substituted La0.4Ca0.6MnO3 as solid oxide fuel cell electrode material

    NASA Astrophysics Data System (ADS)

    Singh, Monika; Kumar, Dinesh; Singh, Akhilesh Kumar

    2018-04-01

    For solid oxide fuel cell electrode material, calcium doped lanthanum manganite La0.4Ca0.6MnO3 (LCMO) and cerium-incorporated on Ca-site with composition La0.40Ca0.55Ce0.05MnO3 (LCCMO) were synthesized using most feasible and efficient glycine-nitrate method. The formation of crystalline single phase was confirmed by x-ray diffraction (XRD). The Rietveld analysis reveals that both systems crystallize into orthorhombic crystal structure with Pnma space group. Additionally, 8 mole % Y2O3 stabilized ZrO2 (8YSZ) solid electrolyte was also synthesized using high energy ball mill to check the reaction with electrode materials. It was found that the substitution of Ce+4 cations in LCMO perovskite suppressed formation of undesired insulating CaZrO3 phase.

  10. Direct measurement of ferromagnetic ordering in biaxially strained LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Klie, R. F.; Yuan, T.; Tanase, M.; Yang, G.; Ramasse, Q.

    2010-02-01

    LaCoO3 undergoes a transition from a nonmagnetic to a paramagnetic semiconductor at 80 K, associated with a spin-state transition of the Co3+ ions. It was proposed that the temperature of the spin-state transition depends strongly on the LaCoO3 lattice parameter, suggesting that strain can stabilize different spin states at different temperatures. By combining atomic-resolution Z-contrast imaging, electron diffraction, and angular-resolved electron energy-loss spectroscopy (EELS) with in situ cooling experiments, we show that epitaxially strained LaCoO3 (001) thin films grown on LaAlO3 (001) do not undergo a low temperature spin-state transition. Our EELS study explores the origins of the ferromagnetic ordering in strained LaCoO3 films.

  11. Estimation of dc transport dynamics in strongly correlated (La,Pr,Ca)MnO{sub 3} film using an insulator-metal composite model for terahertz conductivity

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nguyen, T. V. A.; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531; Hattori, A. N.

    2014-07-14

    Temperature-dependent conductivities at dc and terahertz (THz) frequency region (σ{sub THz}(ω,T)) were obtained for a strongly correlated (La{sub 0.275}Pr{sub 0.35}Ca{sub 0.375})MnO{sub 3} (LPCMO) film using THz time domain spectroscopy. A composite model that describes σ{sub THz}(ω,T) for LPCMO through the insulator-metal transition (IMT) was established by incorporating Austin-Mott model characterizing the hopping of localized electrons and Drude model explaining the behavior of free electrons. This model enables us to reliably investigate the dc transport dynamics from THz conductivity measurement, i.e., simultaneously evaluate the dc conductivity and the competing composition of metal and insulator phases through the IMT, reflecting the changesmore » in microscopic conductivity of these phases.« less

  12. Investigation of noble metal substrates and buffer layers for BiSrCaCuO thin films

    NASA Astrophysics Data System (ADS)

    Matthiesen, M. M.; Rubin, L. M.; Williams, K. E.; Rudman, D. A.

    Noble metal buffer layers and substrates for Bi2Sr2CaCu2O8 (BSCCO) films were investigated using bulk ceramic processing and thin-film techniques. Highly oriented, superconducting BSCCO films were fabricated on polycrystalline Ag substrates and on Ag/MgO and Ag/YSZ structures. Such films could not be produced on Au or Pt substrates under any annealing conditions. In addition, superconducting BSCCO films could not be produced on Ag/Al2O3, Ag/SiO2/Si, or Ag/(Haynes 230 alloy) structures using high annealing temperatures (870 C). However, oriented although poorly connected, superconducting BSCCO films were fabricated on Ag/Al2O3 structures by using lower annealing temperatures (820 C). Once lower processing temperatures are optimized, Ag may be usable as a buffer layer for BSCCO films.

  13. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr; Gumus, Cebrail

    2016-03-25

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized inmore » the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.« less

  14. Thermoelectric Properties and Microstructure of Ca3 Co 4 O 9 thin films on SrTiO3 and Al2 O 3 Substrates

    NASA Astrophysics Data System (ADS)

    Paulauskas, T.; Qiao, Q.; Gulec, A.; Klie, R. F.; Ozdemir, M.; Boyraz, C.; Mazumdar, D.; Gupta, A.

    2011-03-01

    Ca 3 Co 4 O9 (CCO), a misfit layered structure exhibiting large Seebeck coefficient at temperatures up to 1000K has attracted increasing attention as a novel high-temperature thermoelectric material. In this work, we investigate CCO thin films grown on SrTi O3 (001) and Al 2 O3 (0001) using pulsed laser deposition. Quality of the thin films was examined using high-resolution transmission electron microscopy and thermoelectric transport measurements. HRTEM images show incommensurate stacks of Cd I2 -type Co O2 layer alternating with rock-salt-type Ca 2 Co O3 layer along the c-axis. Perovskite buffer layer about 10nm thick was found present between CCO and SrTi O3 accompanied by higher density of stacking faults. The CCO grown on Al 2 O3 exhibited numerous misoriented grains and presence of Ca x Co O2 phase. Seebeck coefficient measurements yield an improvement for both samples compared to the bulk value. We suggest that thermoelectric properties of CCO increase due to additional phonon scattering at the stacking faults as well as at the film surfaces/interfaces. This research was supported by the US Army Research Office (W911NF-10-1-0147) and the Sivananthan Undergraduate Research Fellowship.

  15. Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

    2016-08-28

    Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

  16. Langmuir probe measurements and mass spectrometry of plasma plumes generated by laser ablation of La0.4Ca0.6MnO3

    NASA Astrophysics Data System (ADS)

    Chen, Jikun; Lunney, James G.; Lippert, Thomas; Ojeda-G-P, Alejandro; Stender, Dieter; Schneider, Christof W.; Wokaun, Alexander

    2014-08-01

    The plasma formed in vacuum by UV nanosecond laser ablation of La0.4Ca0.6MnO3 in the fluence range of 0.8 to 1.9 J cm-2 using both Langmuir probe analysis and energy-resolved mass spectrometry has been studied. Mass spectrometry shows that the main positive ion species are Ca+, Mn+, La+, and LaO+. The Ca+ and Mn+ energy distributions are quite broad and lie in the 0-100 eV region, with the average energies increasing with laser fluence. In contrast, the La+ and LaO+ distributions are strongly peaked around 10 eV. The net time-of-arrival signal derived from the measured positive ion energy distributions is broadly consistent with the positive ion signal measured by the Langmuir probe. We also detected a significant number of O- ions with energies in the range of 0 to 10 eV. The Langmuir probe was also used to measure the temporal variation of the electron density and temperature at 6 cm from the ablation target. In the period when O- ions are found at this position, the plasma conditions are consistent with those required for significant negative oxygen ion formation, as revealed by studies on radio frequency excited oxygen plasma.

  17. Size effect on the structural, magnetic, and magnetotransport properties of electron doped manganite La0.15Ca0.85MnO3

    NASA Astrophysics Data System (ADS)

    Thomas, Rini; Das, Gangadhar; Mondal, Rajib; Pradheesh, R.; Mahato, R. N.; Geetha Kumary, T.; Nirmala, R.; Morozkin, A. V.; Lamsal, J.; Yelon, W. B.; Nigam, A. K.; Malik, S. K.

    2012-04-01

    Nanocrystalline La0.15Ca0.85MnO3 samples of various grain sizes ranging from ˜17 to 42 nm have been prepared by sol-gel technique. Phase purity and composition were verified by room temperature x-ray diffraction and SEM-EDAX analysis. The bulk La0.15Ca0.85MnO3 is known to order antiferromagnetically around 170 K and to undergo a simultaneous crystal structural transition. DC magnetization measurements on 17 nm size La0.15Ca0.85MnO3 show a peak at ˜130 K (TN) in zero-field-cooled (ZFC) state. Field-cooled magnetization bifurcates from ZFC data around 200 K hinting a weak ferromagnetic component near room temperature due to surface moments of the nanoparticle sample. Low temperature powder neutron diffraction experiments reveal that the incomplete structural transition from room temperature orthorhombic to low temperature orthorhombic-monoclinic state also occurs in the nanoparticle sample as in the bulk. Magnetization in the ordered state decreases as particle size increases, thus indicating the reduction of the competing ferromagnetic surface moments.

  18. Growth of Highly c-axis Oriented and/or Epitaxial Single-Domain b-axis Oriented La5Ca9Cu24O41 Thin Films by Pulsed Laser Deposition

    DTIC Science & Technology

    2016-04-01

    project attempted to grow La5Ca9Cu24O41 (LCCO) films on important substrates with the high- thermal -conductivity direction parallel or perpendicular...to the surface of the substrate, counting success as demonstration of b-axis or c-axis oriented LCCO films along with measurement of bulk thermal ...deposition, LCCO, La5Ca9Cu24O41, thermal conductivity, epitaxy 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER OF PAGES 24

  19. Femtosecond optical reflectivity measurements of lattice-mediated spin repulsions in photoexcited LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Bielecki, J.; Rata, A. D.; Börjesson, L.

    2014-01-01

    We present results on the temperature dependence of ultrafast electron and lattice dynamics, measured with pump-probe transient reflectivity experiments, of an epitaxially grown LaCoO3 thin film under tensile strain. Probing spin-polarized transitions into the antibonding eg band provides a measure of the low-spin fraction, both as a function of temperature and time after photoexcitation. It is observed that femtosecond laser pulses destabilize the constant low-spin fraction (˜63%-64%) in equilibrium into a thermally activated state, driven by a subpicosecond change in spin gap Δ. From the time evolution of the low-spin fraction, it is possible to disentangle the thermal and lattice contributions to the spin state. A lattice mediated spin repulsion, identified as the governing factor determining the equilibrium spin state in thin-film LaCoO3, is observed. These results suggests that time-resolved spectroscopy is a sensitive probe of the spin state in LaCoO3 thin films, with the potential to bring forward quantitative insight into the complicated interplay between structure and spin state in LaCoO3.

  20. Controllable piezoelectricity of Pb(Zr 0.2Ti 0.8)O 3 film via in situ misfit strain

    DOE PAGES

    Lee, Hyeon Jun; Guo, Er-Jia; Martin Luther Univ. of Halle-Wittenberg, Halle; ...

    2017-01-18

    In this paper, the tetragonality (c/a) of a PbZr 0.2Ti 0.8O 3 (PZT) thin film on La 0.7Sr 0.3MnO 3/0.72Pb(Mg 1/3Nb 2/3)O 3-0.28PbTiO 3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d 33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Finally, our results demonstrate that the tetragonality of the PZT thin film plays a critical role inmore » determining d 33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.« less

  1. Controllable piezoelectricity of Pb(Zr 0.2Ti 0.8)O 3 film via in situ misfit strain

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, Hyeon Jun; Guo, Er-Jia; Martin Luther Univ. of Halle-Wittenberg, Halle

    In this paper, the tetragonality (c/a) of a PbZr 0.2Ti 0.8O 3 (PZT) thin film on La 0.7Sr 0.3MnO 3/0.72Pb(Mg 1/3Nb 2/3)O 3-0.28PbTiO 3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d 33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Finally, our results demonstrate that the tetragonality of the PZT thin film plays a critical role inmore » determining d 33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.« less

  2. Plasma interactions determine the composition in pulsed laser deposited thin films

    NASA Astrophysics Data System (ADS)

    Chen, Jikun; Döbeli, Max; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas

    2014-09-01

    Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La0.6Sr0.4MnO3, we demonstrate for as grown La0.6Sr0.4MnO3-δ films that a congruent transfer of metallic species is achieved in two pressure windows: ˜10-3 mbar and ˜2 × 10-1 mbar. In the intermediate pressure range, La0.6Sr0.4MnO3-δ becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

  3. Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr ,Ti)O3 thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tang, X. G.; Tian, H. Y.; Wang, J.; Wong, K. H.; Chan, H. L. W.

    2006-10-01

    Ba(Zr0.2Ti0.8)O3 (BZT) thin films on Pt(111)/Ti /SiO2/Si(100) substrates without and with CaRuO3 (CRO) buffer layer were fabricated at 650°C in situ by pulsed laser deposition. The BZT thin films showed a dense morphology, many clusters are found on the surface images of BZT/Pt films, which are composed by nanosized grains of 25-35nm; the average grain size of BZT/CRO films is about 80nm, which lager than that of BZT/Pt thin film. The dielectric constants and dissipation factors of BZT/Pt and BZT/CRO thin films were 392 and 0.019 and 479 and 0.021 at 1MHz, respectively. The dielectric constant of BZT/Pt and BZT/CRO thin films changes significantly with applied dc bias field and has high tunabilities and figures of merit of ˜70% and 37 and 75% and 36, respectively, under an applied field of 400kV /cm. The possible microstructural background responsible for the high dielectric constant and tunability was discussed.

  4. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, Hwachol; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu

    2015-07-20

    Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. Thesemore » findings suggest that MnGaN is a promising PMA layer for future spintronics devices.« less

  5. Mn-Site Doped CaMnO 3: Creation of the CMR Effect

    NASA Astrophysics Data System (ADS)

    Raveau, B.; Zhao, Y. M.; Martin, C.; Hervieu, M.; Maignan, A.

    2000-01-01

    The doping of CaMnO3-δ at Mn sites with pentavalent and hexavalent d0 elements - Nb, Ta, W, Mo - modifies the resistivity behavior of this phase, extending the insulating domain and increasing significantly the resistivity at low temperature as the doping element content increases. The higher valency of the doping element introduces electrons; i.e., Mn3+ species are formed in the Mn4+ matrix. Double exchange phenomena then allow ferromagnetic interactions, by application of external magnetic fields which are similar to those observed for electron-doped manganites Ca1-xLnxMnO3 (x≤0.15), but with smaller magnetic moments. Consequently, this Mn site doping induces CMR properties with resistivity ratios considerably larger than those for CaMnO3-δ.

  6. Electrodeposition synthesis and electrochemical properties of nanostructured γ-MnO 2 films

    NASA Astrophysics Data System (ADS)

    Chou, Shulei; Cheng, Fangyi; Chen, Jun

    The thin films of carambola-like γ-MnO 2 nanoflakes with about 20 nm in thickness and at least 200 nm in width were prepared on nickel sheets by combination of potentiostatic and cyclic voltammetric electrodeposition techniques. The as-prepared MnO 2 nanomaterials, which were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), were used as the active material of the positive electrode for primary alkaline Zn/MnO 2 batteries and electrochemical supercapacitors. Electrochemical measurements showed that the MnO 2 nanoflake films displayed high potential plateau (around 1.0 V versus Zn) in primary Zn/MnO 2 batteries at the discharge current density of 500 mA g -1 and high specific capacitance of 240 F g -1 at the current density of 1 mA cm -2. This indicated the potential application of carambola-like γ-MnO 2 nanoflakes in high-power batteries and electrochemical supercapacitors. The growth process for the one- and three-dimensional nanostructured MnO 2 was discussed on the basis of potentiostatic and cyclic voltammetric techniques. The present synthesis method can be extended to the preparation of other nanostructured metal-oxide films.

  7. Tuning interfacial ferromagnetism in LaNiO 3 / CaMnO 3 superlattices by stabilizing nonequilibrium crystal symmetry

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Flint, C. L.; Vailionis, A.; Zhou, H.

    Perovskite oxide heterostructures offer an important path forward for stabilizing and controlling low-dimensional magnetism. One of the guiding design principles for these materials systems is octahedral connectivity. In superlattices composed of perovskites with different crystal symmetries, variation of the relative ratio of the constituent layers and the individual layer thicknesses gives rise to nonequilibrium crystal symmetries that, in turn, lead to unprecedented control of interfacial ferromagnetism. We have found that in superlattices of CaMnO 3 (CMO) and LaNiO 3 (LNO), interfacial ferromagnetism can be modulated by a factor of 3 depending on LNO and CMO layer thicknesses as well asmore » their relative ratio. Such an effect is only possible due to the nonequilibrium crystal symmetries at the interfaces and can be understood in terms of the anisotropy of the exchange interactions and modifications in the interfacial Ni-O-Mn and Mn-O-Mn bond angles and lengths with increasing LNO layer thickness. Here, these results demonstrate the potential of engineering nonequilibrium crystal symmetries in designing ferromagnetism.« less

  8. Tuning interfacial ferromagnetism in LaNiO 3 / CaMnO 3 superlattices by stabilizing nonequilibrium crystal symmetry

    DOE PAGES

    Flint, C. L.; Vailionis, A.; Zhou, H.; ...

    2017-10-31

    Perovskite oxide heterostructures offer an important path forward for stabilizing and controlling low-dimensional magnetism. One of the guiding design principles for these materials systems is octahedral connectivity. In superlattices composed of perovskites with different crystal symmetries, variation of the relative ratio of the constituent layers and the individual layer thicknesses gives rise to nonequilibrium crystal symmetries that, in turn, lead to unprecedented control of interfacial ferromagnetism. We have found that in superlattices of CaMnO 3 (CMO) and LaNiO 3 (LNO), interfacial ferromagnetism can be modulated by a factor of 3 depending on LNO and CMO layer thicknesses as well asmore » their relative ratio. Such an effect is only possible due to the nonequilibrium crystal symmetries at the interfaces and can be understood in terms of the anisotropy of the exchange interactions and modifications in the interfacial Ni-O-Mn and Mn-O-Mn bond angles and lengths with increasing LNO layer thickness. Here, these results demonstrate the potential of engineering nonequilibrium crystal symmetries in designing ferromagnetism.« less

  9. Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Paul, T.; Ghosh, A.

    2017-04-01

    We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

  10. Manganese Recovery by Silicothermic Reduction of MnO in BaO-MnO-MgO-CaF2 (-SiO2) Slags

    NASA Astrophysics Data System (ADS)

    Heo, Jung Ho; Park, Joo Hyun

    2018-04-01

    The effects of reducing agent, CaF2 content, and reaction temperature upon the silicothermic reduction of MnO in the BaO-MnO-MgO-CaF2 (-SiO2) slags were investigated. Mn recovery was proportional to Si activity in the molten alloy. Moreover, 90 pct yield of Mn recovery was obtained under 5 mass pct CaF2 content and 1873 K (1600 °C) reaction temperature. Increasing CaF2 content above 5 pct yielded little or no further increase in Mn recovery, because it was accompanied by increased slag viscosity owing to the precipitation of high melting point compounds such as Ba2SiO4.

  11. Microfabrication of SrRuO3 thin films on various oxide substrates using LaAlO3/BaOx sacrificial bilayers

    NASA Astrophysics Data System (ADS)

    Harada, Takayuki; Tsukazaki, Atsushi

    2018-02-01

    Oxides provide various fascinating physical properties that could find use in future device applications. However, the physical properties of oxides are often affected by formation of oxygen vacancies during device fabrication processes. In this study, to develop a damage-free patterning process for oxides, we focus on a lift-off process using a sacrificial template layer, by which we can pattern oxide thin films without severe chemical treatment or plasma bombardment. As oxides need high thin-film growth temperature, a sacrificial template needs to be made of thermally stable and easily etchable materials. To meet these requirements, we develop a sacrificial template with a carefully designed bilayer structure. Combining a thermally and chemically stable LaAlO3 and a water-soluble BaOx, we fabricated a LaAlO3/BaOx sacrificial bilayer. The patterned LaAlO3/BaOx sacrificial bilayers were prepared on oxide substrates by room-temperature pulsed laser deposition and standard photolithography process. The structure of the sacrificial bilayer can be maintained even in rather tough conditions needed for oxide thin film growth: several hundred degrees Celsius under high oxygen pressure. Indeed, the LaAlO3/BaOx bilayer is easily removable by sonication in water. We applied the lift-off method using the LaAlO3/BaOx sacrificial bilayer to a representative oxide conductor SrRuO3 and fabricated micron-scale Hall-bar devices. The SrRuO3 channels with the narrowest line width of 5 μm exhibit an almost identical transport property to that of the pristine film, evidencing that the developed process is beneficial for patterning oxides. We show that the LaAlO3/BaOx lift-off process is applicable to various oxide substrates: SrTiO3, MgO, and Al2O3. The new versatile patterning process will expand the range of application of oxide thin films in electronic and photonic devices.

  12. A Simple Way to Pattern Mn_12-acetate Thin Films

    NASA Astrophysics Data System (ADS)

    Kim, K.; Seo, D. M.; Means, J.; Viswanathan, M.; Teizer, W.

    2004-03-01

    We have observed that Mn_12-acetate ([Mn_12O_12(CH_3COO)_16(H_2O)_4]ot2CH_3COOHot4H_2O) molecules, dissolved in organic solvents, can be self-assembled along the edge of the Mn_12 solution droplet on a Si/SiO2 substrate as the solvent is evaporated. This phenomenon may be related to the well known "coffee-stain effect"”, which leads to a dense particulate deposit along the edge of a drying droplet of coffee on a solid surface. In our study, we have observed such a deposit of Mn_12-acetate at the perimeter of a droplet, after a dilute solution in various organic solvents has been dried. We investigated how the deposits depend on the evaporation rate. Also, we controlled the concentration of the solution to find its relation to the resulting pattern deposit. By patterning the surface with resist and performing a lift-off we created what are, to our knowledge, the first artificial patterns of Mn_12-acetate. This may allow for convenient thin film devices of Mn_12-acetate and work in this direction is ongoing. This work was supported by the Texas Higher Education Coordinating Board and Texas A University.

  13. An enhancement of photoluminescence property of Ag doped La2O3 thin films at room temperature

    NASA Astrophysics Data System (ADS)

    Jbeli, R.; Boukhachem, A.; Ben Jemaa, I.; Mahdhi, N.; Saadallah, F.; Elhouichet, H.; Alleg, S.; Amlouk, M.; Ezzaouïa, H.

    2017-09-01

    Metal transition doped oxide thin films or nanocomposites have recently emerged at the forefront of potentials research. With the focus mainly on efficiency, the aspect of stability against optical irradiation of such materials has so far not been thoroughly addressed. This work covers the synthesis of silver doped lanthanum oxide thin films (La2O3:Ag) which have been prepared by the spray pyrolysis technique on glass substrates at 460 °C. Then, Ag thin films were grown on lanthanum oxide thin films by thermal evaporation. The present work aims to reach the synthesis of La2O3:Ag thin films using both the spray pyrolysis and thermal evaporation techniques. First, X-ray diffraction analysis shows that undoped and Ag doped films crystallize in a mixture of hexagonal and cubic phase with crystallites oriented along (001) direction. Raman spectroscopy shows the bands positions corresponding to hexagonal and cubic phases. On the other hand, an attempt regarding their optical properties has been carried out by means of photoluminescence measurements. Second, from electrical conductivity measurements, the activation energy decreases from 1.42 to 1.09 eV with the increase of annealing time and the charge carriers are following the CBH model as dominant charge transport mechanism. Finally, the annealing time influences the surface wettability property and transforms La2O3 character from hydrophobic (θ > 90°) to hydrophilic (θ < 90°).

  14. An enhancement of photoluminescence property of Ag doped La2O3 thin films at room temperature.

    PubMed

    Jbeli, R; Boukhachem, A; Ben Jemaa, I; Mahdhi, N; Saadallah, F; Elhouichet, H; Alleg, S; Amlouk, M; Ezzaouïa, H

    2017-09-05

    Metal transition doped oxide thin films or nanocomposites have recently emerged at the forefront of potentials research. With the focus mainly on efficiency, the aspect of stability against optical irradiation of such materials has so far not been thoroughly addressed. This work covers the synthesis of silver doped lanthanum oxide thin films (La 2 O 3 :Ag) which have been prepared by the spray pyrolysis technique on glass substrates at 460°C. Then, Ag thin films were grown on lanthanum oxide thin films by thermal evaporation. The present work aims to reach the synthesis of La 2 O 3 :Ag thin films using both the spray pyrolysis and thermal evaporation techniques. First, X-ray diffraction analysis shows that undoped and Ag doped films crystallize in a mixture of hexagonal and cubic phase with crystallites oriented along (001) direction. Raman spectroscopy shows the bands positions corresponding to hexagonal and cubic phases. On the other hand, an attempt regarding their optical properties has been carried out by means of photoluminescence measurements. Second, from electrical conductivity measurements, the activation energy decreases from 1.42 to 1.09eV with the increase of annealing time and the charge carriers are following the CBH model as dominant charge transport mechanism. Finally, the annealing time influences the surface wettability property and transforms La 2 O 3 character from hydrophobic (θ>90°) to hydrophilic (θ<90°). Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Observation of long phase-coherence length in epitaxial La-doped CdO thin films

    NASA Astrophysics Data System (ADS)

    Yun, Yu; Ma, Yang; Tao, Songsheng; Xing, Wenyu; Chen, Yangyang; Su, Tang; Yuan, Wei; Wei, Jian; Lin, Xi; Niu, Qian; Xie, X. C.; Han, Wei

    2017-12-01

    The search for long electron phase-coherence length, which is the length that an electron can keep its quantum wavelike properties, has attracted considerable interest in the last several decades. Here, we report the long phase-coherence length of ˜3.7 μm in La-doped CdO thin films at 2 K. Systematical investigations of the La doping and the temperature dependences of the electron mobility and the electron phase-coherence length reveal contrasting scattering mechanisms for these two physical properties. Furthermore, these results show that the oxygen vacancies could be the dominant scatters in CdO thin films that break the electron phase coherence, which would shed light on further investigation of phase-coherence properties in oxide materials.

  16. Antisite disorder induced spin glass and exchange bias effect in Nd2NiMnO6 epitaxial thin film

    NASA Astrophysics Data System (ADS)

    Singh, Amit Kumar; Chauhan, Samta; Chandra, Ramesh

    2017-03-01

    We report the observation of the exchange bias effect and spin glass behaviour at low temperature in a ferromagnetic Nd2NiMnO6 epitaxial thin film. Along with the ferromagnetic transition at ˜194 K, an additional transition is observed at lower temperature (˜55 K) as seen from M-T curves of the sample. A shift in the ac susceptibility peak with frequency has been observed at low temperature, which is a signature of a glassy phase within the sample. The detailed investigation of the memory effect and time dependent magnetic relaxation measurements reveals the presence of a spin glass phase in the Nd2NiMnO6 thin film. The exchange bias effect observed at low temperature in the sample has been associated with an antisite disorder induced spin glass phase, which results in a ferromagnetic/spin glass interface at low temperature. The exchange bias behaviour has been further confirmed by performing cooling field and temperature dependence of exchange bias along with training effect measurements.

  17. Large magnetoresistance in antiferromagnetic CaMnO3-δ

    NASA Astrophysics Data System (ADS)

    Zeng, Z.; Greenblatt, M.; Croft, M.

    1999-04-01

    CaMnO3-δ with δ=0, 0.06, and 0.11 was prepared by the Pechini citrate gel process at 1100 °C. Oxygen defects were created by quenching the sample from high temperature. Chemical analysis and x-ray absorption show that the formal valence of Mn in CaMnO3 is close to 4+, and that Mn(III) is created in the quenched samples. Moreover the x-ray absorption near-edge spectra results support the creation of two Mn(III) five coordinate sites for each O vacancy. CaMnO3-δ (δ=0-0.11) are n-type semiconductors and order antiferromagnatically with Néel temperatures close to 125 K. The activation energy decreases with increasing δ. A relatively large (~40%) negative magnetoresistance (MR) is observed for CaMnO2.89. This result shows that a substantial MR can occur in these G-type antiferromagnetic materials.

  18. La2/3Sr1/3MnO3-La0.1Bi0.9MnO3 heterostructures for spin filtering

    NASA Astrophysics Data System (ADS)

    Gajek, M.; Bibes, M.; Varela, M.; Fontcuberta, J.; Herranz, G.; Fusil, S.; Bouzehouane, K.; Barthélémy, A.; Fert, A.

    2006-04-01

    We have grown heterostructures associating half-metallic La2/3Sr1/3MnO3 (LSMO) bottom electrodes and ferromagnetic La0.1Bi0.9MnO3 (LBMO) tunnel barriers. The layers in the heterostructures have good structural properties and top LBMO films (4 nm thick) have a very low roughness when deposited onto LSMO/SrTiO3(1.6 nm) templates. The LBMO films show an insulating behavior and a ferromagnetic character that are both preserved down to very low thicknesses. They are thus suitable for being used as tunnel barriers. Spin-dependent transport measurements performed on tunnel junctions defined from LSMO/SrTiO3/LBMO/Au samples show a magnetoresistance of up to ~90% at low temperature and bias. This evidences a spin-filtering effect by the LBMO layer, with a spin-filtering efficiency of ~35%.

  19. Ab-initio calculations of the Ruddlesden Popper phases CaMnO3, CaO(CaMnO3) and CaO(CaMnO3)2

    NASA Astrophysics Data System (ADS)

    Cardoso, C.; Borges, R. P.; Gasche, T.; Godinho, M.

    2008-01-01

    The present work reports ab-initio density functional theory calculations for the Ruddlesden-Popper phase CaO(CaMnO3)n compounds. In order to study the evolution of the properties with the number of perovskite layers, a detailed analysis of the densities of states calculated for each compound and for several magnetic configurations was performed. The effect of distortions of the crystal structure on the magnetic ground state is also analysed and the exchange constants and transition temperatures are calculated for the three compounds using a mean field model. The calculated magnetic ground state structures and magnetic moments are in good agreement with experimental results and previous calculations.

  20. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  1. Microscopic evidence of a strain-enhanced ferromagnetic state in LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Park, S.; Ryan, P.; Karapetrova, E.; Kim, J. W.; Ma, J. X.; Shi, J.; Freeland, J. W.; Wu, Weida

    2009-08-01

    Strain-induced modification of magnetic properties of lightly hole doped epitaxial LaCoO3 thin films on different substrates were studied with variable temperature magnetic force microscopy (MFM). Real space observation at 10 K reveals the formation of the local magnetic clusters on a relaxed film grown on LaAlO3 (001). In contrast, a ferromagnetic ground state has been confirmed for tensile-strained film on SrTiO3 (001), indicating that strain is an important factor in creating the ferromagnetic state. Simultaneous atomic force microscopy and MFM measurements reveal nanoscale defect lines for the tensile-strained films, where the structural defects have a large impact on the local magnetic properties.

  2. The magnetic, electrical transport and magnetoresistance properties of epitaxial La0.7Sr0.3Mn1- xFexO3 (x = 0-0.20) thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Q.; Li, Z. W.; Li, J.; Ong, C. K.

    2001-05-01

    High-quality epitaxial La0.7Sr0.3Mn1- xFexO3 (LSMFO) thin films have been successfully prepared on SrTiO3 single-crystal substrates by pulsed laser deposition. No structural changes were observed for x≤0.12. For x = 0.2, an elongation in the a-axis direction was identified. An antiferromagnetic arrangement of Fe and Mn ions over the whole Fe-doping region and a canted spin structure at x≥0.12 were observed. Unlike the case for the bulks, only one resistivity peak was observed for the epitaxial films. This shows that one of the two resistivity peaks for polycrystalline LSMFO bulks has its origin in grain boundaries. The effect of Fe doping can be attributed to a combination of doping disorder, Fe-Mn superexchange interactions and a site-percolation mechanism, which suppress the metallic conduction and ferromagnetism. In epitaxial LSMFO thin films, extrinsic magnetoresistance (MR) related to grain boundary effects was excluded. The intrinsic MR is gradually enhanced with increasing Fe concentration. For the film with x = 0.12, a fairly large MR = 12% was observed in a small field of 4 kOe at 145 K. For those films, the resistivity above Tc (the ferromagnetic Curie temperature) follows the Emin-Holstein model for small polarons. The polaron activation energy is enhanced due to weakening of the local double-exchange ferromagnetism by Fe doping. The fitting results indicate that the lattice polarons are magnetic in nature and that non-nearest-neighbour polaron hopping exists. The resistivity below Tp (the resistivity peak temperature) follows an empirical relation, ρ(T,H) = ρ0 + ρ2(H)T2 + ρ7.5(H)T7.5. It is found that the MR arises mainly from the suppression of T7.5-terms. The enhanced MR can be attributed to the suppression of the enhanced magnetic scattering and polaron scattering under an external field.

  3. Optical magnetoelectric effect at CaRuO3-CaMnO3 interfaces as a polar ferromagnet

    NASA Astrophysics Data System (ADS)

    Yamada, Hiroyuki; Sato, H.; Akoh, H.; Kida, N.; Arima, T.; Kawasaki, M.; Tokura, Y.

    2008-02-01

    A correlated electron interface between paramagnetic CaRuO3 and antiferromagnetic CaMnO3 has been characterized with optical magnetoelectric (OME) effect as an interface-selective probe for spin and charge states. To detect the OME effect, i.e., nonreciprocal directional dichroism for visible or near-infrared light, we have constructed a "tricolor" superlattice with artificially broken inversion symmetry by stacking CaRuO3, CaMnO3, and CaTiO3, and patterned a grating structure with 4μm period on the superlattice. The observed intensity modulation (0.3% at 50K) in the Bragg diffraction verifies a charge transfer and concomitant ferromagnetism at the CaRuO3-CaMnO3 interface.

  4. La 1-x Ca x MnO 3 semiconducting nanostructures: morphology and thermoelectric properties.

    PubMed

    Culebras, Mario; Torán, Raquel; Gómez, Clara M; Cantarero, Andrés

    2014-01-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1-x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

  5. Noteworthy performance of La(1-x)Ca(x)MnO3 perovskites in generating H2 and CO by the thermochemical splitting of H2O and CO2.

    PubMed

    Dey, Sunita; Naidu, B S; Govindaraj, A; Rao, C N R

    2015-01-07

    Perovskite oxides of the composition La1-xCaxMnO3 (LCM) have been investigated for the thermochemical splitting of H2O and CO2 to produce H2 and CO, respectively. The study was carried out in comparison with La1-xSrxMnO3, CeO2 and other oxides. The LCM system exhibits superior characteristics in high-temperature evolution of oxygen, and in reducing CO2 to CO and H2O to H2. The best results were obtained with La0.5Ca0.5MnO3 whose performance is noteworthy compared to that of other oxides including ceria. The orthorhombic structure of LCM seems to be a crucial factor.

  6. Far-infrared and dc magnetotransport of CaMnO3-CaRuO3 superlattices

    NASA Astrophysics Data System (ADS)

    Yordanov, P.; Boris, A. V.; Freeland, J. W.; Kavich, J. J.; Chakhalian, J.; Lee, H. N.; Keimer, B.

    2011-07-01

    We report temperature- and magnetic-field-dependent measurements of the dc resistivity and the far-infrared reflectivity (FIR) (photon energies ℏω=50-700 cm-1) of superlattices comprising ten consecutive unit cells of the antiferromagnetic insulator CaMnO3, and four to ten unit cells of the correlated paramagnetic metal CaRuO3. Below the Néel temperature of CaMnO3, the dc resistivity exhibits a logarithmic divergence upon cooling, which is associated with a large negative, isotropic magnetoresistance. The ω→0 extrapolation of the resistivity extracted from the FIR reflectivity, on the other hand, shows a much weaker temperature and field dependence. We attribute this behavior to scattering of itinerant charge carriers in CaRuO3 from sparse, spatially isolated magnetic defects at the CaMnO3-CaRuO3 interfaces. This field-tunable “transport bottleneck” effect may prove useful for functional metal-oxide devices.

  7. Local atomic and electronic structures of epitaxial strained LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Sterbinsky, G. E.; Ryan, P. J.; Kim, J.-W.; Karapetrova, E.; Ma, J. X.; Shi, J.; Woicik, J. C.

    2012-01-01

    We have examined the atomic and electronic structures of perovskite lanthanum cobaltite (LaCoO3) thin films using Co K-edge x-ray absorption fine structure (XAFS) spectroscopy. Extended XAFS (EXAFS) demonstrates that a large difference between in-plane and out-of-plane Co-O bond lengths results from tetragonal distortion in highly strained films. The structural distortions are strongly coupled to the hybridization between atomic orbitals of the Co and O atoms, as shown by x-ray absorption near edge spectroscopy (XANES). Our results indicate that increased hybridization is not the cause of ferromagnetism in strained LaCoO3 films. Instead, we suggest that the strain-induced distortions of the oxygen octahedra increase the population of eg electrons and concurrently depopulate t2g electrons beyond a stabilization threshold for ferromagnetic order.

  8. Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

    1988-03-01

    High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

  9. Magnetic-field-dependent dielectric constant in La2/3Ca1/3MnO3

    NASA Astrophysics Data System (ADS)

    Rivas, J.; Mira, J.; Rivas-Murias, B.; Fondado, A.; Dec, J.; Kleemann, W.; Señarís-Rodríguez, M. A.

    2006-06-01

    We report a rather high dependence of the dielectric permittivity on the magnetic field in La2/3Ca1/3MnO3. The variation is maximum at around 270K, little above the Curie temperature TC, and it reaches a 35% under only 0.5T. We attribute this phenomenon to the space-charge or interfacial polarization produced between the insulator and the metallic regions segregated intrinsically in the material above TC.

  10. Examining the Magnetic Properties of LaCoO3 Thin Films Using Magnetic Force Microscopy

    NASA Astrophysics Data System (ADS)

    Berg, Morgann; Posadas, Agham; de Lozanne, Alex; Demkov, Alexander

    2011-03-01

    In contrast to the non-magnetic ground state of bulk LaCo O3 (LCO) at low temperatures, ferromagnetism has been observed in elastically strained thin film specimens. The origins of ferromagnetism in strained LCO thin films have been obscured by conflicting experimental results. Pulsed laser deposition (PLD) is the current standard of preparation techniques used to grow thin films of LCO, but results from thin film LCO samples prepared by PLD have been questioned on the basis of chemical inhomogeneity and film defects. Using magnetic force microscopy, we investigate the microscale magnetic properties of strained thin films of LCO prepared by molecular beam epitaxy and deposited on lanthanum aluminate and strontium titanate substrates. We observe these properties across a temperature range surrounding the Curie temperature (Tc ~ 80 K) and compare our results to global magnetic characteristics of these films as measured by a SQUID magnetometer. Supported by NSF-DMR and NSF-IGERT.

  11. Effect of lattice mismatch on the magnetic properties of nanometer-thick La0.9Ba0.1MnO3 (LBM) films and LBM/BaTiO3/LBM heterostructures

    NASA Astrophysics Data System (ADS)

    Mirzadeh Vaghefi, P.; Baghizadeh, A.; Willinger, M.; Lourenço, A. A. C. S.; Amaral, V. S.

    2017-12-01

    Oxide multiferroic thin films and heterostructures offer a wide range of properties originated from intrinsic coupling between lattice strain and nanoscale magnetic/electronic ordering. La0.9Ba0.1MnO3 (LBM) thin-films and LBM/BaTiO3/LBM (LBMBT) heterostructures were grown on single crystalline [100] silicon and [0001] Al2O3 using RF magnetron sputtering to study the effect of crystallinity and induced lattice mismatch in the film on magnetic properties of deposited films and heterostructures. The thicknesses of the films on Al2O3 and Si are 70 and 145 nm, respectively, and for heterostructures are 40/30/40 nm on both substrates. The microstructure of the films, state of strain and growth orientations was studied by XRD and microscopy techniques. Interplay of microstructure, strain and magnetic properties is further investigated. It is known that the crystal structure of substrates and imposed tensile strain affect the physical properties; i.e. magnetic behavior of the film. The thin layer grown on Al2O3 substrate shows out-of-plane compressive strain, while Si substrate induces tensile strain on the deposited film. The magnetic transition temperatures (Tc) of the LBM film on the Si and Al2O3 substrates are found to be 195 K and 203 K, respectively, slightly higher than the bulk form, 185 K. The LBMBT heterostructure on Si substrate shows drastic decrease in magnetization due to produced defects created by diffusion of Ti ions into magnetic layer. Meanwhile, the Tc in LBMBTs increases in respect to other studied single layers and heterostructure, because of higher tensile strain induced at the interfaces.

  12. Molten Salt Assisted Self-Assembly: Synthesis of Mesoporous LiCoO2 and LiMn2 O4 Thin Films and Investigation of Electrocatalytic Water Oxidation Performance of Lithium Cobaltate.

    PubMed

    Saat, Gülbahar; Balci, Fadime Mert; Alsaç, Elif Pınar; Karadas, Ferdi; Dag, Ömer

    2018-01-01

    Mesoporous thin films of transition metal lithiates (TML) belong to an important group of materials for the advancement of electrochemical systems. This study demonstrates a simple one pot method to synthesize the first examples of mesoporous LiCoO 2 and LiMn 2 O 4 thin films. Molten salt assisted self-assembly can be used to establish an easy route to produce mesoporous TML thin films. The salts (LiNO 3 and [Co(H 2 O) 6 ](NO 3 ) 2 or [Mn(H 2 O) 4 ](NO 3 ) 2 ) and two surfactants (10-lauryl ether and cethyltrimethylammonium bromide (CTAB) or cethyltrimethylammonium nitrate (CTAN)) form stable liquid crystalline mesophases. The charged surfactant is needed for the assembly of the necessary amount of salt in the hydrophilic domains of the mesophase, which produces stable metal lithiate pore-walls upon calcination. The films have a large pore size with a high surface area that can be increased up to 82 m 2 g -1 . The method described can be adopted to synthesize other metal oxides and metal lithiates. The mesoporous thin films of LiCoO 2 show promising performance as water oxidation catalysts under pH 7 and 14 conditions. The electrodes, prepared using CTAN as the cosurfactant, display the lowest overpotentials in the literature among other LiCoO 2 systems, as low as 376 mV at 10 mA cm -2 and 282 mV at 1 mA cm -2 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Microwave Absorption Properties of La0.8Ca0.2-xAgxMnO3 (x=0.05; x=0.15) Synthesized by Sol-Gel Method

    NASA Astrophysics Data System (ADS)

    Kurniawan, B.; Laksmi, W.; Sahara, N. A.

    2018-04-01

    Microwave absorption properties of La0.8Ca0.2-xAgxMnO3 (x= 0.05; 0.15) is reported in this paper. Lanthanum manganite materials was reported as a potential absorber material [1][2][3]. In this paper, the material was synthesized by sol-gel method, calcined at 550°C, and sintered at 900°C. The material was characterized by X-Ray Diffractometer (XRD), and we found that the materials were single phased. Through SEM-EDS characterization it is found that the materials have compositional purity. The resistivity of the materials is obtained by four point probe method, and it is shown that Ag doped decreases the resistivity of the materials. Reflection loss of La0.8Ca0.15Ag0.05MnO3 reaches -4.470 dB and La0.8Ca0.05Ag0.15MnO3 reaches - 7.953 dB.

  14. Effect of La substitution on structural and electrical properties of BiFeO3 thin film

    NASA Astrophysics Data System (ADS)

    Das, S. R.; Bhattacharya, P.; Choudhary, R. N. P.; Katiyar, R. S.

    2006-03-01

    The effect of La substitution on the structural and electrical properties of multiferroic BiFeO3 thin films grown on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition has been reported. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all of the secondary phases. The dielectric constant of the films was systematically increased from 165 to ~350 and the films showed excellent dielectric loss behavior. We observed a gradual increase in the remnant polarization (2Pr) with lanthanum substitution obtaining a maximum value of ~42 μC/cm2 at 20 mol % La incorporation. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current decreased from 10-4 to 10-7 A/cm2 for La-substituted films at a field strength of 50 kV/cm. The reduction of dc leakage current of La-substituted films is explained on the basis of relative phase stability and improved microstructure of the material.

  15. Magnetism and electronic structure at the interface of a metal CaRuO3 and Mott insulator CaMnO3.

    NASA Astrophysics Data System (ADS)

    Boris, Alexander; Freeland, John; Kavich, Jerald; Lee, Ho Nyung; Yordanov, Petar; Khaliullin, Giniyat; Keimer, Bernhard; Chakhalian, Jak

    2007-03-01

    Recent advances in fabrication of ultra-thin complex oxide heterostructures have opened new opportunities to investigate possible novel quantum states at the correlated interfaces. With this aim we fabricated ultra-thin superlattices of CaMnO3(CMO)/CaRuO3(CRO) with the thickness of CRO layers from 1 to 12 unit cells by laser MBE. Electronic properties of CRO/CMO were investigated by soft x-ray spectroscopies at the L-edges of Mn and Ru. SQUID and optical reflectivity revealed a ferromagnetic thickness-independent transition at Tc 100K and CRO thickness-dependent negative magnetoresistance. This behavior is in marked contrast to the individual layers. At the interface we found a clear sign of net magnetic moment on Mn, which saturates only at magnetic field of 5T. Unlike CMO, similar measurements at the Ru L3-edge showed no detectable magnetism in the field up to 5T. Comparison with Ru references confirmed Ru(IV) oxidation state. These findings are in the sharp contrast with previously suggested models involving Ru(IV-V) valency exchange and thus reveal intricate nature of the interface between a metal and Mott insulator.

  16. Understanding Metal-Insulator transitions in ultra-thin films of LaNiO3

    NASA Astrophysics Data System (ADS)

    Ravichandran, Jayakanth; King, Philip D. C.; Schlom, Darrell G.; Shen, Kyle M.; Kim, Philip

    2014-03-01

    LaNiO3 (LNO) is a bulk paramagnetic metal and a member of the family of RENiO3 Nickelates (RE = Rare Earth Metals), which is on the verge of the metal-insulator transition. Ultra-thin films of LNO has been studied extensively in the past and due to its sensitivity to disorder, the true nature of the metal-insulator transition in these films have been hard to decipher. We grow high quality ultra-thin films of LNO using reactive molecular beam epitaxy (MBE) and use a combination of ionic liquid gating and magneto-transport measurements to understand the nature and tunability of metal-insulator transition as a function of thickness for LNO. The underlying mechanisms for the transition are discussed in the framework of standard transport models. These results are discussed in the light of other Mott insulators such as Sr2IrO4, where we have performed similar measurements around the insulating state.

  17. Formation of the 110-K superconducting phase in Pb-doped Bi-Sr-Ca-Cu-O thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kula, W.; Sobolewski, R.; Gorecka, J.

    1991-09-15

    Investigation of the 110-K Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub {ital x}} phase formation in superconducting thin films of Bi-based cuprates is reported. The films were dc magnetron sputtered from single Bi(Pb)-Sr-Ca-Cu-O targets of various stoichiometries, and subsequently annealed in air at high temperatures. The influence of the initial Pb content, annealing conditions, as well as the substrate material on the growth of the 110-K phase was investigated. We found that the films, fully superconducting above 100 K could be reproducibly fabricated on various dielectric substrates from Pb-rich targets by optimizing annealing conditions for each initial Pb/Bi ratio. Heavy Pb dopingmore » considerably accelerated formation of the 110-K phase, reducing the film annealing time to less than 1 h. Films containing, according to the x-ray measurement, more than 90% of the 110-K phase were obtained on MgO substrates, after sputtering from the Bi{sub 2}Pb{sub 2.5}Sr{sub 2}Ca{sub 2.15}Cu{sub 3.3}O{sub {ital x}} target and annealing in air for 1 h at 870 {degree}C. The films were {ital c}-axis oriented, with 4.5-K-wide superconducting transition, and zero resistivity at 106 K. Their critical current density was 2 {times} 10{sup 2} A/cm{sup 2} at 90 K, and above 10{sup 4} A/cm{sup 2} below 60 K. The growth of the 110-K phase on epitaxial substrates, such as CaNdAlO{sub 4} and SrTiO{sub 3}, was considerably deteriorated, and the presence of the 80- and 10-K phases was detected. Nevertheless, the best films deposited on these substrates were fully superconducting at 104 K and exhibited critical current densities above 2 {times} 10{sup 5} A/cm{sup 2} below 60 K{minus}one order of magnitude greater than the films deposited on MgO.« less

  18. Multiferroic RMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Fontcuberta, Josep

    2015-03-01

    Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress, providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO3 epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments. En ce qui concerne les applications, le développement de films minces de matériaux multiferroïques a aussi énormément progressé, et de nos jours des films minces de manganites avec des propriétés similaires à celles des matériaux massifs existent. Nous passons en revue ici les résultats obtenus dans le domaine de la croissance de couches minces épitaxiés de RMnO3 hexagonal et orthorhombique et de la caractérisation de leurs propriétés magnétiques et ferroélectriques. Nous discutons certains enjeux et proposons quelques idées pour des recherches et développements futurs.

  19. Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan

    2016-11-10

    Growth of unexpected phases from a composite target of BiFeO 3:BiMnO 3 and/or BiFeO 3:BiCrO 3 has been explored using pulsed laser deposition. The Bi 2FeMnO 6 tetragonal phase can be grown directly on SrTiO 3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO 3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO 2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO 3:BiCrO 3 target. Puremore » X2 phase can be obtained on CeO 2-buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO 3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO 2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.« less

  20. Evaluation of the magnetocaloric response of nano-sized La0.7Ca0.3Mn1-xNixO3 manganites synthesized by auto-combustion method

    NASA Astrophysics Data System (ADS)

    Gómez, Adrián; Chavarriaga, Edgar; Supelano, Iván; Parra, Carlos Arturo; Morán, Oswaldo

    2018-05-01

    A systematic study of the dependence of the magnetization on the magnetic field around the ferromagnetic-paramagnetic phase transition temperature is carried out on La0.7Ca0.3Mn1-xNixO3 (x=0, 0.02, 0.07, and 1) samples synthesized by auto-combustion method. The successful substitution of Mn3+ ions by Ni2+ ions in the La0.7Ca0.3MnO3 lattice is corroborated by X-ray diffraction technique. Banerjees criteria, Arrott plots, and the scaling hypothesis are used to analyze the experimental data. It is verified that the Ni-doping increases the operating temperature range for magnetocaloric effect through tuning of the magnetic transition temperature. Probably, the replacement of Mn3+ by Ni2+ ions in the La0.7Ca0.3MnO3 lattice weakens the Mn3+-O-Mn4+ double exchange interaction, which leads to a decrease in the transition temperature and magnetic moment in the samples. The Arrott plots suggest that the phase transition from ferromagnetic to paramagnetic in the nano-sized manganite is of second order. The analysis of the magnetization results show that the maximum magnetic entropy changes observed for x=0, 0.02, 0.07, and 0.1 compositions are 0.85, 0.77, 0.63, and 0.59 J/kg K, under a magnetic field of 1.5 T. These values indicate that the magnetic entropy change achieved for La0.7Ca0.3Mn1-xNixO3 manganites synthesized by auto-combustion method is higher than those reported for other manganites with comparable Ni-doping levels but synthesized by standard solid state reaction. It is also observed that the addition of Ni2+ increases the value of the relative cooling power as compared to that of the parent compound. The highest value of this parameter (˜60 J/kg) is found for a Ni-doping level of 2 % around 230 K in a field of 1.5 T.

  1. Electronic and optical properties of La-doped S r3I r2O7 epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Souri, M.; Terzic, J.; Johnson, J. M.; Connell, J. G.; Gruenewald, J. H.; Thompson, J.; Brill, J. W.; Hwang, J.; Cao, G.; Seo, A.

    2018-02-01

    We have investigated structural, transport, and optical properties of tensile strained (Sr1-xL ax ) 3I r2O7 (x =0 , 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped S r3I r2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.

  2. Noncollinear antiferromagnetic Mn3Sn films

    NASA Astrophysics Data System (ADS)

    Markou, A.; Taylor, J. M.; Kalache, A.; Werner, P.; Parkin, S. S. P.; Felser, C.

    2018-05-01

    Noncollinear hexagonal antiferromagnets with almost zero net magnetization were recently shown to demonstrate giant anomalous Hall effect. Here, we present the structural and magnetic properties of noncollinear antiferromagnetic Mn3Sn thin films heteroepitaxially grown on Y:ZrO2 (111) substrates with a Ru underlayer. The Mn3Sn films were crystallized in the hexagonal D 019 structure with c -axis preferred (0001) crystal orientation. The Mn3Sn films are discontinuous, forming large islands of approximately 400 nm in width, but are chemical homogeneous and characterized by near perfect heteroepitaxy. Furthermore, the thin films show weak ferromagnetism with an in-plane uncompensated magnetization of M =34 kA/m and coercivity of μ0Hc=4.0 mT at room temperature. Additionally, the exchange bias effect was studied in Mn3Sn /Py bilayers. Exchange bias fields up to μ0HEB=12.6 mT can be achieved at 5 K. These results show Mn3Sn films to be an attractive material for applications in antiferromagnetic spintronics.

  3. Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

    NASA Astrophysics Data System (ADS)

    Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

    2012-03-01

    We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

  4. Selective interlayer ferromagnetic coupling between the Cu spins in YBa2Cu3O7−x grown on top of La0.7Ca0.3MnO3

    PubMed Central

    Huang, S. W.; Wray, L. Andrew; Jeng, Horng-Tay; Tra, V. T.; Lee, J. M.; Langner, M. C.; Chen, J. M.; Roy, S.; Chu, Y. H.; Schoenlein, R. W.; Chuang, Y.-D.; Lin, J.-Y.

    2015-01-01

    Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa2Cu3O7−x (YBCO) superconductor when it is grown on top of ferromagnetic La0.7Ca0.3MnO3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO2 but not with La0.7Ca0.3O interfacial termination. Such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO2 plane at the La0.7Ca0.3O and MnO2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems. PMID:26573394

  5. Methanol adsorption and dissociation on LaMnO 3 and Sr doped LaMnO 3 (001) surfaces

    DOE PAGES

    Beste, Ariana

    2017-06-20

    Using density functional theory, we investigate in this paper methanol adsorption and dissociation on the MnO 2- and LaO-terminated LaMnO 3 (001) surface as a function of Sr dopant enrichment in and near the surface. In response to bulk cleavage, we find electron depletion of the negatively charged MnO 2 surface layer that is enhanced by Sr doping in the subsurface. In contrast, we observe electron accumulation in the positively charged LaO surface layer that is reduced by Sr doping in the surface layer. Methanol adsorbs dissociatively on the LaO termination of the LaMnO 3 (001) surface. Methanol adsorption onmore » the LaO termination is strongly preferred over adsorption on the MnO 2 termination. While moderate doping has a small influence on methanol adsorption and dissociation, when 100% of La is replaced by Sr in the surface or subsurface, the adsorption preference of methanol is reversed. Finally, if the surface is highly dopant enriched, methanol favours dissociative adsorption on the MnO 2-terminated surface.« less

  6. Methanol adsorption and dissociation on LaMnO 3 and Sr doped LaMnO 3 (001) surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Beste, Ariana

    Using density functional theory, we investigate in this paper methanol adsorption and dissociation on the MnO 2- and LaO-terminated LaMnO 3 (001) surface as a function of Sr dopant enrichment in and near the surface. In response to bulk cleavage, we find electron depletion of the negatively charged MnO 2 surface layer that is enhanced by Sr doping in the subsurface. In contrast, we observe electron accumulation in the positively charged LaO surface layer that is reduced by Sr doping in the surface layer. Methanol adsorbs dissociatively on the LaO termination of the LaMnO 3 (001) surface. Methanol adsorption onmore » the LaO termination is strongly preferred over adsorption on the MnO 2 termination. While moderate doping has a small influence on methanol adsorption and dissociation, when 100% of La is replaced by Sr in the surface or subsurface, the adsorption preference of methanol is reversed. Finally, if the surface is highly dopant enriched, methanol favours dissociative adsorption on the MnO 2-terminated surface.« less

  7. Magnetic properties of LCMO deposited films

    NASA Astrophysics Data System (ADS)

    Park, Seung-Iel; Jeong, Kwang Ho; Cho, Young Suk; Kim, Chul Sung

    2002-04-01

    La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO 3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La 0.89Ca 0.11MnO 3, respectively, while the film prepared by sol-gel spin coating was cubic with La 0.7Ca 0.3MnO 3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

  8. La 1−x Ca x MnO3 semiconducting nanostructures: morphology and thermoelectric properties

    PubMed Central

    2014-01-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1−x Ca x MnO3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content. PMID:25206315

  9. Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films

    NASA Astrophysics Data System (ADS)

    Miao, J.; Yuan, J.; Wu, H.; Yang, S. B.; Xu, B.; Cao, L. X.; Zhao, B. R.

    2007-01-01

    Epitaxial Ba0.15Zr0.85TiO3 (BZT) ferroelectric thin films with (001), (011), and (111) orientations were, respectively, grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrates by pulsed laser deposition method. The dc electric-field dependence of permittivity and dielectric loss of (001)-, (011)-, and (111)-oriented BZT/LSMO heterostructures obeys the Johnson formula, and the ac electric-field dependence of that obeys the Rayleigh law under the subswitching field region. The anisotropic dielectric properties are attributed to the higher mobility of the charge carriers, the concentration of mobile interfacial domain walls, and boundaries in the (111)-oriental films than in the (110)- and (100)-oriented films.

  10. Ferromagnetic spin-correlations in strained LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Ma, J. X.; Shi, J.

    2008-11-01

    We present an element-resolved study of the valence and magnetic properties of LaCoO3 thin films grown via pulsed laser deposition. The Co L edge x-ray absorption shows that ferromagnetic (FM) order arises from a slight hole doping of the system presumably due to nonstoichiometry, which in the bulk system disrupts the low-spin state. However, even though the films are hole doped, the magnetic moments under tensile strain are much larger than the bulk system indicating that the strain can greatly increase the FM fraction observed in the spin-glass regime at low doping.

  11. Influence of Fe doped on the magnetocaloric behavior of La_{{2}/{3}} Ca_{{1}/{3}} Mn1-x Fe x O3 compounds: a Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Alzate-Cardona, J. D.; Barco-Rios, H.; Restrepo-Parra, E.

    2018-02-01

    The magnetocaloric behavior of La{2/{3}} Ca{1/{3}} Mn1-x Fe x O3 for x  =  0.00, 0.02, 0.03, 0.05, 0.07, 0.08 and 0.10 under the influence of an external magnetic field was simulated and analyzed. Simulations were carried out using the Monte Carlo method and the classical Heisenberg model under the Metropolis algorithm. These mixed valence manganites are characterized by having three types of magnetic ions corresponding to Mn4+≤ft(S=\\frac{3}{2}\\right) , which are bonded with Ca2+ , and Mneg3+ and Mneg\\prime3+ (S=2) , related to La3+ . The Fe ions were randomly included, replacing Mn ions. With this model, the magnetic entropy change, Δ S , in an isothermal process was determined. -Δ Sm showed maximum peaks around the paramagnetic-ferromagnetic transition temperature, which depends on Fe doping. Relative cooling power was computed for different Fe concentrations varying the magnetic applied field. Our model and results show that the Fe doping decreases the magnetocaloric effect in the La{2/{3}} Ca{1/{3}} Mn1-x Fe x O3, making this a bad candidate for magnetic refrigeration. The strong dependence of the magnetocaloric behavior on Fe doping and the external magnetic field in La{2/{3}} Ca{1/{3}} Mn1-x Fe x O3 can boost these materials for the future technological applications.

  12. Unusual ferromagnetism enhancement in ferromagnetically optimal manganite La0.7−yCa0.3+yMn1−yRuyO3 (0≤y<0.3): the role of Mn-Ru t2g super-exchange

    PubMed Central

    Liu, M. F.; Du, Z. Z.; Xie, Y. L.; Li, X.; Yan, Z. B.; Liu, J. –M.

    2015-01-01

    The eg-orbital double-exchange mechanism as the core of physics of colossal magnetoresistance (CMR) manganites is well known, which usually covers up the role of super-exchange at the t2g-orbitals. The role of the double-exchange mechanism is maximized in La0.7Ca0.3MnO3, leading to the concurrent metal-insulator transition and ferromagnetic transition as well as CMR effect. In this work, by a set of synchronous Ru-substitution and Ca-substitution experiments on La0.7–yCa0.3+yMn1–yRuyO3, we demonstrate that the optimal ferromagnetism in La0.7Ca0.3MnO3 can be further enhanced. It is also found that the metal-insulator transition and magnetic transition can be separately modulated. By well-designed experimental schemes with which the Mn3+-Mn4+ double-exchange is damaged as weakly as possible, it is revealed that this ferromagnetism enhancement is attributed to the Mn-Ru t2g ferromagnetic super-exchange. The present work allows a platform on which the electro-transport and magnetism of rare-earth manganites can be controlled by means of the t2g-orbital physics of strongly correlated transition metal oxides. PMID:25909460

  13. Weak ferromagnetism and short range polar order in NaMnF3 thin films

    NASA Astrophysics Data System (ADS)

    KC, Amit; Borisov, Pavel; Shvartsman, Vladimir V.; Lederman, David

    2017-02-01

    The orthorhombically distorted perovskite NaMnF3 has been predicted to become ferroelectric if an a = c distortion of the bulk Pnma structure is imposed. In order to test this prediction, NaMnF3 thin films were grown on SrTiO3 (001) single crystal substrates via molecular beam epitaxy. The best films were smooth and single phase with four different twin domains. In-plane magnetization measurements revealed the presence of antiferromagnetic ordering with weak ferromagnetism below the Néel temperature TN = 66 K. For the dielectric studies, NaMnF3 films were grown on a 30 nm SrRuO3 (001) layer used as a bottom electrode grown via pulsed laser deposition. The complex permittivity as a function of frequency indicated a strong Debye-like relaxation contribution characterized by a distribution of relaxation times. A power-law divergence of the characteristic relaxation time revealed an order-disorder phase transition at 8 K. The slow relaxation dynamics indicated the formation of super-dipoles (superparaelectric moments) that extend over several unit cells, similar to polar nanoregions of relaxor ferroelectrics.

  14. Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

    NASA Astrophysics Data System (ADS)

    Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

    2018-05-01

    D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

  15. Biocorrosion investigation of two shape memory nickel based alloys: Ni-Mn-Ga and thin film NiTi.

    PubMed

    Stepan, L L; Levi, D S; Gans, E; Mohanchandra, K P; Ujihara, M; Carman, G P

    2007-09-01

    Thin film nitinol and single crystal Ni-Mn-Ga represent two new shape memory materials with potential to be used as percutaneously placed implant devices. However, the biocompatibility of these materials has not been adequately assessed. Immersion tests were conducted on both thin film nitinol and single crystal Ni-Mn-Ga in Hank's balanced salt solution at 37 degrees C and pH 7.4. After 12 h, large pits were found on the Ni-Mn-Ga samples while thin film nitinol displayed no signs of corrosion. Further electrochemical tests on thin film nitinol samples revealed breakdown potentials superior to a mechanically polished nitinol disc. These results suggest that passivation or electropolishing of thin film nitinol maybe unnecessary to promote corrosion resistance.

  16. Emergent Interfacial Ferromagnetism in CaMnO3-based Superlattices

    NASA Astrophysics Data System (ADS)

    Grutter, Alexander

    2014-03-01

    Interfaces of complex oxide materials provide a rich playground not only for the exploration of properties not found in the bulk constituents but also for the development of functional interfaces to be incorporated in spintronic applications. Emergent interfacial magnetic phenomena have been of great interest but surprisingly there have been few examples of emergent interfacial ferromagnetism. In this talk, I will describe our recent work on the stabilization of ferromagnetism in CaMnO3-based superlattices. We have demonstrated ferromagnetism at the interface between the antiferromagnetic insulator CaMnO3 and a paramagnetic metallic layer, including CaRuO3 and LaNiO3. Theoretically the ferromagnetism has been attributed to an interfacial double exchange interaction among the interfacial Mn ions that is mediated by itinerant electrons from the paramagnetic metallic layer. Through polarized neutron reflectivity and observation of exchange bias, we have demonstrated that the ferromagnetism comes from Mn ions in a single unit cell at the interfaces just as theory has predicted. We have also demonstrated that the metallicity of the paramagnetic layer is critical in stabilizing ferromagnetism at the interface and that the interfacial ferromagnetism can be suppressed by suppressing the metallicity of the paramagnetic layer. Despite the agreement with theory, there remain open questions as to the magnetic interactions among the interfacial ferromagnetic layers. For example, the saturated magnetic moment modulates as a function of the thickness of both the CaMnO3 and paramagnetic metal layers. The origins of this oscillation are not well understood and may stem from either structural effects or long-range oscillatory magnetic coupling interactions reminiscent of RKKY interactions. Evidence of the doubling of the unit cell and long range antiferromagnetic correlations support these speculations. This work was supported by the U.S. Department of Energy, Office of Science

  17. Nano CaCO₃ imprinted starch hybrid polyethylhexylacrylate\\polyvinylalcohol nanocomposite thin films.

    PubMed

    Prusty, Kalyani; Swain, Sarat K

    2016-03-30

    Starch hybrid polyethylhexylacrylate (PEHA)/polyvinylalcohol (PVA) nanocomposite thin films are prepared by different composition of nano CaCO3 in aqueous medium. The chemical interaction of nano CaCO3 with PEHA in presence of starch and PVA is investigated by Fourier transforms infrared spectroscopy (FTIR). X-ray diffraction (XRD) is used in order to study the change in crystallite size and d-spacing during the formation of nanocomposite thin film. The surface morphology of nanofilms is studied by scanning electron microscope (SEM). The topology and surface roughness of the films is noticed by atomic force microscope (AFM). The tensile strength, thermal stability and thermal conductivity of films are increased with increase in concentrations of CaCO3 nanopowder. The chemical resistance and biodegradable properties of the nanocomposite thin films are also investigated. The growth of bacteria and fungi in starch hybrid PEHA film is reduced substantially with imprint of nano CaCO3. Copyright © 2015 Elsevier Ltd. All rights reserved.

  18. Effect of natural homointerfaces on the magnetic properties of pseudomorphic La0.7Sr0.3MnO3 thin film: Phase separation vs split domain structure

    NASA Astrophysics Data System (ADS)

    Congiu, Francesco; Sanna, Carla; Maritato, Luigi; Orgiani, Pasquale; Geddo Lehmann, Alessandra

    2016-12-01

    We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La0.7Sr0.3MnO3 deposited by molecular beam epitaxy on ferroelastic LaAlO3(001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La0.7Sr0.3MnO3. In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization Ms = 3.2 μB/Mn, slightly reduced with respect to the fully polarized value of 3.7 μB/Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled MFC(T) branch and a two peak structure in the zero field cooled MZFC(T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike TC = 370 K, is separated by a twin boundary with lower Curie point TC = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

  19. Deposition and composition-control of Mn-doped ZnO thin films by combinatorial pulsed laser deposition using two delayed plasma plumes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sanchez-Ake, C.; Camacho, R.; Moreno, L.

    2012-08-15

    Thin films of ZnO doped with manganese were deposited by double-beam, combinatorial pulsed laser deposition. The laser-induced plasmas were studied by means of fast photography and using a Langmuir probe, whereas the films were analyzed by x-ray-diffraction and energy-dispersive x-ray spectroscopy. The effect of the relative delay between plasma plumes on the characteristics of the films was analyzed. It was found that using this parameter, it is possible to control the dopant content keeping the oriented wurtzite structure of the films. The minimum content of Mn was found for plume delays between 0 and 10 {mu}s as the interaction betweenmore » plasmas scatters the dopant species away from the substrate, thus reducing the incorporation of Mn into the films. Results suggest that for delays shorter than {approx}100 {mu}s, the expansion of the second plume through the region behind the first plume affects the composition of the film.« less

  20. Synthesis, characterization and optical properties of ATiO{sub 3}–Pr thin films prepared by a photochemical method (where A = Ba and Ca)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cabello, G., E-mail: gerardocabelloguzman@hotmail.com; Lillo, L.; Caro, C.

    2015-10-15

    Highlights: • A method of photochemical deposition has been used to the preparation of (Ba,Ca)TiO{sub 3} thin films doped Pr(III). • The (Ba,Ca)TiO{sub 3}/Pr(III) films under 375 nm excitation shows emissions attributable to {sup 1}D{sub 2} → {sup 3}H{sub 4} transition of Pr ion. • These PL signals decreased above 10 mol% of Pr(III). • Analysis suggests the presence of intermediate energy levels in the band gap influences in the PL processes. - Abstract: This article reports the characterization and optical properties of (Ba,Ca)TiO{sub 3} thin films doped with Pr at different proportions (0–15 mol%). The films were deposited onmore » Si (1 0 0) and quartz substrates using a photochemical method and post-annealed at 900 °C. The evaluation of photo-reactivity of the precursor complexes was monitored by UV–vis and FT-IR spectroscopy. The obtained films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The results indicate that Ba, Ca, Ti, O and Pr are present in the form of perovskite. Under UV light excitation (375 nm) the (Ba,Ca)TiO{sub 3}–Pr films show the characteristic emissions ascribed to {sup 1}D{sub 2} → {sup 3}H{sub 4} transition of Pr{sup 3+} ion. The optical measurements show the presence of intermediate energy levels in the band gap which influence the emission processes.« less

  1. Selective interlayer ferromagnetic coupling between the Cu spins in YBa 2Cu 3O 7–x grown on top of La 0.7Ca 0.3MnO 3

    DOE PAGES

    Huang, S. W.; Wray, L. Andrew; Jeng, Horng -Tay; ...

    2015-11-17

    Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa 2Cu 3O 7–x (YBCO) superconductor when it is grown on top of ferromagnetic La 0.7Ca 0.3MnO 3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO 2 but not withmore » La 0.7Ca 0.3O interfacial termination. Thus, such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO 2 plane at the La 0.7Ca 0.3O and MnO 2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems.« less

  2. Superconducting thin films of Bi-Sr-Ca-Cu-O by laser ablation

    NASA Astrophysics Data System (ADS)

    Bedekar, M. M.; Safari, A.; Wilber, W.

    1992-11-01

    Superconducting thin films of Bi-Sr-Ca-Cu-O have been deposited by KrF excimer laser ablation. The best in situ films showed a Tc onset of 110 K and a Tc(0) of 76 K. A study of the laser plume revealed the presence of two distinct regimes. The forward directed component increased with fluence and the film composition was stoichiometric in this region. This is in agreement with the results on the 123 system by Venkatesan et al. [1]. The film properties were found to be critically dependent on the substrate temperature and temperatures close to melting gave rise to 2212 and 2223 phases. At lower temperatures, 2201 and amorphous phases were obtained. The film morphology and superconducting properties were a function of the target to substrate distance and the oxygen pressure during deposition and cooling. An increase in the target to substrate distance led to a deterioration of the properties due to the energy consideration for the formation of 2212 and 2223 phases. The best films were obtained using cooling pressures of 700 Torr. The microwave surface resistance of the films measured at 35 GHz dropped below that of copper at 30 K. Film growth was studied using X-ray diffraction and STM/AFM. This work is a discussion of the role of the different variables on the film properties.

  3. Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures.

    PubMed

    Gray, B A; Middey, S; Conti, G; Gray, A X; Kuo, C-T; Kaiser, A M; Ueda, S; Kobayashi, K; Meyers, D; Kareev, M; Tung, I C; Liu, Jian; Fadley, C S; Chakhalian, J; Freeland, J W

    2016-09-15

    The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa2Cu3O7 (YBCO) and colossal magnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.

  4. Strain-induced oxygen vacancies in ultrathin epitaxial CaMnO3 films

    NASA Astrophysics Data System (ADS)

    Chandrasena, Ravini; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario; de Groot, Frank; Arenholz, Elke; Kobayashi, Keisuke; Aschauer, Ulrich; Spaldin, Nicola; Xi, Xiaoxing; Gray, Alexander

    Dynamic control of strain-induced ionic defects in transition-metal oxides is considered to be an exciting new avenue towards creating materials with novel electronic, magnetic and structural properties. Here we use atomic layer-by-layer laser molecular beam epitaxy to synthesize high-quality ultrathin single-crystalline CaMnO3 films with systematically varying coherent tensile strain. We then utilize a combination of high-resolution soft x-ray absorption spectroscopy and bulk-sensitive hard x-ray photoemission spectroscopy in conjunction with first-principles theory and core-hole multiplet calculations to establish a direct link between the coherent in-plane strain and the oxygen-vacancy content. We show that the oxygen vacancies are highly mobile, which necessitates an in-situ-grown capping layer in order to preserve the original strain-induced oxygen-vacancy content. Our findings open the door for designing and controlling new ionically active properties in strongly-correlated transition-metal oxides.

  5. Synthesis and Analysis of MnTiO3 Thin Films on ITO Coated Glass Substrates

    NASA Astrophysics Data System (ADS)

    Martin, Emerick; Sahiner, Mehmet-Alper

    Perovskites like Manganese Titanium Oxide have interesting chemical properties that may be advantageous to the development of p-n junction photovoltaic cells. Due to the limited understanding behind the compound, it is essential to know the characteristics of it when it is deposited in thin film form. The cells were created using pulsed laser deposition method for two separate mediums (first layers after ITO). ZnO was deposited onto ITO glass for the first sample. For the second sample, a layer of pure Molybdenum was deposited onto the ITO glass. The MnTiO3 was then deposited onto both samples. There was a target thickness of 1000 Angstroms, but ellipsometry shows that, for the Mo based sample, that film thickness was around 1500 Angstroms. There were inconclusive results for the ZnO based sample. The concentration of active carriers was measured using a Hall Effect apparatus for the Mo based sample. The XRD analyses were used to confirm the perovskite structure of the films. Measurements for photoelectric conversion efficiency were taken using a Keathley 2602 ScourceMeter indicated low values for efficiency. The structural information that is correlated with the low electrical performance of this sample will be discussed. SHU-NJSGC Summer 2015 Fellowship.

  6. Conductor-backed coplanar waveguide resonators of Y-Ba-Cu-O and Tl-Ba-Ca-Cu-O on LaAlO3

    NASA Technical Reports Server (NTRS)

    Miranda, F. A.; Bhasin, K. B.; Stan, M. A.; Kong, K. S.; Itoh, T.

    1992-01-01

    Conductor-backed coplanar waveguide (CBCPW) resonators operating at 10.8 GHz have been fabricated from Tl-Ba-Ca-O (TBCCO) and Y-Ba-Cu-O (YBCO) thin films on LaAlO3. The resonators consist of a coplanar waveguide (CPW) patterned on the superconducting film side of the LaAlO3 substrate with a gold ground plane coated on the opposite side. These resonators were tested in the temperature range from 14 to 106 K. At 77 K, the best of our TBCCO and YBCO resonators have an unloaded quality factor (Qo) 7 and 4 times, respectively, larger than that of a similar all-gold resonator. In this study, the Qo's of the TBCCO resonators were larger than those of their YBCO counterparts throughout the aforementioned temperature range.

  7. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    PubMed

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  8. Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

    NASA Technical Reports Server (NTRS)

    VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Canedy, C. L.; Aggarwal, S.; Venkatesan, T.; Ramesh, R.; Horwitz, S.; Chang, W.

    1999-01-01

    We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

  9. Size effect on the magnetic properties of antiferromagnetic La0.2Ca0.8MnO3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Markovich, V.; Fita, I.; Wisniewski, A.; Mogilyansky, D.; Puzniak, R.; Titelman, L.; Martin, C.; Gorodetsky, G.

    2010-03-01

    Magnetic properties of electron-doped La0.2Ca0.8MnO3 manganite nanoparticles with average particle size ranging from 15 to 37 nm, prepared by the glycine-nitrate method, have been investigated in temperature range 5-300 K and in magnetic fields up to 90 kOe. A monotonous enhancement of weak ferromagnetism linked to the reduction in the particle size was observed for all nanoparticles. Magnetic hysteresis loops also indicate size-dependent exchange bias effect displayed by horizontal and vertical shifts in field-cooled processes. The magnetization data reveal two ferromagnetic components: first one appears at T˜200K and may be attributed to surface magnetization and second one appears as a result of spin canting of antiferromagnetic core or is developed at some interfaces inside nanoparticles. Time evolution of magnetization recorded in magnetic fields after the field cooling to low temperatures exhibits a very noisy behavior that may be caused by formation of collective state of nanoparticles with no clear tendency to reach equilibrium state. Magnetic properties of the nanoparticle samples are compared with those of the bulk La0.2Ca0.8MnO3 .

  10. Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Deng, Guochu; He, Zhangbin; Muralt, Paul

    2009-04-01

    The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 (CCTO) thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor defect at a level ˜90 meV higher than valence band. Two contact types, metal-semiconductor and metal-insulator-semiconductor junctions, were observed and their barrier heights, and impurity concentrations were theoretically calculated. Accordingly, the Schottky barrier height of metal-semiconductor contact is about 0.8 eV, and the diffusion barrier height of metal-insulator-semiconductor contact is about 0.4-0.7 eV. The defect concentrations of both samples are quite similar, of the magnitude of 1019 cm-3, indicating an inherent feature of high defect concentration.

  11. Non-linear optical probing of strain-enabled ferroelectricity in CaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Vlahos, Eftihia; Brooks, Charles; Ecklund, Carl Johan; Biegalski, Mike; Rabe, Karin; Schlom, Darrell; Gopalan, Venkatraman

    2010-03-01

    First principles calculations predict CaTiO3, under tensile strain, to become ferroelectric with a spontaneous polarization of up to 0.5 C/m^2. Comparative second harmonic generation (SHG) studies of a series of strained CaTiO3 thin films were undertaken in order to determine their transition temperature and point group symmetry. The epitaxial strain ranged from -1.7% to 3.3%. Symmetry analysis of the SHG polar plots confirms that for the samples under tensile strain, the polarization is along the <110>p directions and the point group of the ferroelectric phase is mm2. SHG ``hysteresis'' loops were also obtained; these show clear switching. The experimental results are in excellent agreement with the first principles calculations predictions, and low temperature dielectric measurements that were performed on the same samples.

  12. Ferromagnetic order in epitaxially strained LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Fuchs, D.; Pinta, C.; Schwarz, T.; Schweiss, P.; Nagel, P.; Schuppler, S.; Schneider, R.; Merz, M.; Roth, G.; v. Löhneysen, H.

    2007-04-01

    LaCoO3 films grown epitaxially on ⟨001⟩ oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates by pulsed laser deposition exhibit ferromagnetic ordering below a critical temperature, Tc , of 85K . Polycrystalline films of LaCoO3 prepared in the same way did not show ferromagnetic order down to T≈5K , and their temperature dependent susceptibility was identical to that of bulk LaCoO3 . The ferromagnetism in epitaxial films is not simply a property of the surface region, rather it extends over the complete film thickness, as shown by the linear increase of the saturated magnetic moment with increasing film thickness. We discuss this surprising result in terms of epitaxial tensile strain via the properly chosen substrate inducing ferromagnetic order.

  13. Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Jha, Pankaj; Sands, Timothy D.; Cassels, Laura; Jackson, Philip; Favaloro, Tela; Kirk, Benjamin; Zide, Joshua; Xu, Xianfan; Shakouri, Ali

    2012-09-01

    Lanthanum strontium manganate (La0.67Sr0.33MnO3, i.e., LSMO)/lanthanum manganate (LaMnO3, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated as a potential p-type thermoelectric material. Growth was performed using pulsed laser deposition to achieve epitaxial LSMO (metal)/LMO (p-type semiconductor) superlattices on (100)-strontium titanate (STO) substrates. The magnitude of the in-plane Seebeck coefficient of LSMO thin films (<20 μV/K) is consistent with metallic behavior, while LMO thin films were p-type with a room temperature Seebeck coefficient of 140 μV/K. Thermal conductivity measurements via the photo-acoustic (PA) technique showed that LSMO/LMO superlattices exhibit a room temperature cross-plane thermal conductivity (0.89 W/m.K) that is significantly lower than the thermal conductivity of individual thin films of either LSMO (1.60 W/m.K) or LMO (1.29 W/m.K). The lower thermal conductivity of LSMO/LMO superlattices may help overcome one of the major limitations of oxides as thermoelectrics. In addition to a low cross-plane thermal conductivity, a high ZT requires a high power factor (S2σ). Cross-plane electrical transport measurements were carried out on cylindrical pillars etched in LSMO/LMO superlattices via inductively coupled plasma reactive ion etching. Cross-plane electrical resistivity data for LSMO/LMO superlattices showed a magnetic phase transition temperature (TP) or metal-semiconductor transition at ˜330 K, which is ˜80 K higher than the TP observed for in-plane resistivity of LSMO, LMO, or LSMO/LMO thin films. The room temperature cross-plane resistivity (ρc) was found to be greater than the in-plane resistivity by about three orders of magnitude. The magnitude and temperature dependence of the cross-plane conductivity of LSMO/LMO superlattices suggests the presence of a barrier with the effective barrier height of ˜300 meV. Although the magnitude of the cross-plane power factor is too low for thermoelectric

  14. Interfacial coupling in multiferroic BiFeO3 and ferromagnetic La2/3Sr1/3MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Dominguez, C.; E Ordoñez, J.; E Gomez, M.

    2017-12-01

    Antiferromagnetic/Ferromagnetic coupling mechanics have been studying by growing successfully BiFeO3/La2/3Sr1/3MnO3 bilayers on SrTiO3 single crystals by using rf and dc sputtering technique at pure oxygen pressures. We have investigated the magnetic behaviour of this samples, field cooling loops evidence interfacial coupling effect when antiferromagnetic ferroelectric BiFeO3 is placed in contact with ferromagnetic La2/3Sr1/3MnO3 indicate by the shift of the magnetization loop to negative values of the applied magnetic field. Our samples exhibited an exchange bias of 76Oe at 5K after field cooling the sample under 5000Oe. Temperature dependence of the exchange bias field showed exponential decay. The BFO/LSMO bilayer exhibits excellent ferroelectric behaviour (Ps=65μC/cm2 at 4V and 100Hz). Coexistence of ferroelectric and ferromagnetic properties in the BFO/LSMO bilayer make it a promising candidate system for applications where the magnetoelectric behaviour is required.

  15. Polar phase transitions in heteroepitaxial stabilized La0.5Y0.5AlO3 thin films

    NASA Astrophysics Data System (ADS)

    Liu, Shenghua; Zhang, Chunfeng; Zhu, Mengya; He, Qian; Chakhalian, Jak; Liu, Xiaoran; Borisevich, Albina; Wang, Xiaoyong; Xiao, Min

    2017-10-01

    We report on the fabrication of epitaxial La0.5Y0.5AlO3 ultrathin films on (001) LaAlO3 substrates. Structural characterizations by scanning transmission electron microscopy and x-ray diffraction confirm the high quality of the film with a - b + c - AlO6 octahedral tilt pattern. Unlike either of the nonpolar parent compound, LaAlO3 and YAlO3, second harmonic generation measurements on the thin films suggest a nonpolar-polar phase transition at T c near 500 K, and a polar-polar phase transition at T a near 160 K. By fitting the angular dependence of the second harmonic intensities, we further propose that the two polar structures can be assigned to the Pmc2 1 and Pmn2 1 space group, while the high temperature nonpolar structure belongs to the Pbnm space group.

  16. Raman study of transition-metal oxides with perovskite-like structure

    NASA Astrophysics Data System (ADS)

    Kolev, Nikolay Iliev

    Perovskite-like oxides exhibit a rich variety of properties of fundamental scientific interest and potential application value. The motivation for this work is to contribute to our knowledge of perovskite-like systems and strongly correlated systems in general. The polarized Raman spectra of single crystal and thin film CaCu3Ti4O12, single crystal and thin film CaRuO3, microcrystals of La0.5Ca 0.5MnO3, and ceramic and thin film CaMnO3 have been investigated. In close comparison to results from lattice dynamics calculations most of the Raman lines in the CaCu3Ti4O12, CaRuO3, La0.5Ca0.5MnO3 and CaMnO 3 spectra, have been assigned to definite phonon modes. The validity of the model for twin orientation in the Pnma structure for CaRuO3 and La0.5Ca0.5MnO3 is confirmed. The analysis of the CaMnO3 spectra contributed to the development of a model, based on four basic distortions of the (distorted) perovskite structure. The temperature behavior of the CaCu3Ti4O 12 spectra shows that there is no evidence for structural phase transition in the temperature range 20--600 K, so such a transition cannot be responsible for the sharp drop in the dielectric constant below 100 K. The Raman spectra indirectly support the mechanism of formation of barrier layer capacitances in CaCu3Ti4O12.The observation of additional Raman mode of nominal Ag symmetry is discussed in terms of coexistence of domains of different atomic arrangement, or alternatively of non-stoichiometry (Cu deficiency). In the case of the thin film, the tetragonal distortions could be responsible for the greater separation of the additional Ag line. No anomalies in the temperature behavior of the Raman lines of CaRuO3 is observed, which is an indirect evidence for its lack of long-range magnetic ordering at low temperatures (depending on whether this ordering would be observable by Raman spectroscopy through spin-phonon coupling). In La0.5Ca0.5MnO 3 the appearance of several Raman lines below TN is analyzed in terms of

  17. Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Jong, Chao-An; Gan, Jon-Yiew

    2000-02-01

    Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.

  18. Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Behler, Anna; Department of Physics, Institute for Solid State Physics, Dresden University of Technology, 01062 Dresden; Teichert, Niclas

    2013-12-15

    A thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni{sub 50}Mn{sub 32}Sn{sub 18} thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.

  19. Thin film growth of CaFe2As2 by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  20. Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo 2O 5.5+δ Thin Films

    DOE PAGES

    Cheng, Sheng; Lu, Jiangbo; Han, Dong; ...

    2016-11-23

    Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo 2O 5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo 2O 5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo 2O 5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo 2O 6 (δ = 0.5). The discrepancy of energymore » band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Thus, LaBaCo 2O 5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere.« less

  1. Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films.

    PubMed

    Cheng, Sheng; Lu, Jiangbo; Han, Dong; Liu, Ming; Lu, Xiaoli; Ma, Chunrui; Zhang, Shengbai; Chen, Chonglin

    2016-11-23

    Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo 2 O 5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo 2 O 5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo 2 O 5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo 2 O 6 (δ = 0.5). The discrepancy of energy band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Hence, LaBaCo 2 O 5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere.

  2. Switchable Schottky diode characteristics induced by electroforming process in Mn-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Nam, Yoonseung; Hwang, Inrok; Oh, Sungtaek; Lee, Sangik; Lee, Keundong; Hong, Sahwan; Kim, Jinsoo; Choi, Taekjib; Ho Park, Bae

    2013-04-01

    We investigated the asymmetric current-voltage (I-V) characteristics and accompanying unipolar resistive switching of pure ZnO and Mn(1%)-doped ZnO (Mn:ZnO) films sandwiched between Pt electrodes. After electroforming, a high resistance state of the Mn:ZnO capacitor revealed switchable diode characteristics whose forward direction was determined by the polarity of the electroforming voltage. Linear fitting of the I-V curves highlighted that the rectifying behavior was influenced by a Schottky barrier at the Pt/Mn:ZnO interface. Our results suggest that formation of conducting filaments from the cathode during the electroforming process resulted in a collapse of the Schottky barrier (near the cathode), and rectifying behaviors dominated by a remnant Schottky barrier near the anode.

  3. Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

    NASA Astrophysics Data System (ADS)

    Abbas, Haider; Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Kang, Tae Su; Yoon, Tae-Sik; Kang, Chi Jung

    2018-06-01

    Improved resistive switching characteristics are demonstrated in a hybrid device with Pt/Ti/MnO (thin film)/MnO (nanoparticle)/Pt structure. The hybrid devices of MnO thin film and nanoparticle assembly were fabricated. MnO nanoparticles with an average diameter of ∼30 nm were chemically synthesized and assembled as a monolayer on a Pt bottom electrode. A MnO thin film of ∼40 nm thickness was deposited on the nanoparticle assembly to form the hybrid structure. Resistive switching could be induced by the formation and rupture of conducting filaments in the hybrid oxide layers. The hybrid device exhibited very stable unipolar switching with good endurance and retention characteristics. It showed a larger and stable memory window with a uniform distribution of SET and RESET voltages. Moreover, the conduction mechanisms of ohmic conduction, space-charge-limited conduction, Schottky emission, and Poole–Frenkel emission have been investigated as possible conduction mechanisms for the switching of the devices. Using MnO nanoparticles in the thin film and nanoparticle heterostructures enabled the appropriate control of resistive random access memory (RRAM) devices and markedly improved their memory characteristics.

  4. BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

    NASA Astrophysics Data System (ADS)

    Won, Sung Sik; Kawahara, Masami; Kuhn, Lindsay; Venugopal, Vineeth; Kwak, Jiyeon; Kim, Ill Won; Kingon, Angus I.; Kim, Seung-Hyun

    2017-04-01

    Environmentally benign lead-free ferroelectric (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 (KNMN) thin film capacitors with a small concentration of a BiFeO3 (BF) dopant were prepared by a cost effective chemical solution deposition method for high energy density storage device applications. 6 mol. % BF-doped KNMN thin films showed very slim hysteresis loops with high maximum and near-zero remanent polarization values due to a phase transition from the orthorhombic structure to the pseudo-cubic structure. Increasing the electric field up to 2 MV/cm, the total energy storage density (Jtotal), the effective recoverable energy density (Jeff), and the energy conversion efficiency (η) of lead-free KNMN-BF thin film capacitors were 31.0 J/cm3, 28.0 J/cm3, and 90.3%, respectively. In addition, these thin film capacitors exhibited a fast discharge time of a few μs and a high temperature stability up to 200 °C, proving their strong potential for high energy density storage and conversion applications.

  5. Detailed study of the magnetic behaviour at low scale in La2/3Sr1/3MnO3

    NASA Astrophysics Data System (ADS)

    Arango, I. C.; E Ordoñez, J.; Dominguez, C.; Arango, C.; E Gomez, M.

    2017-12-01

    The La2/3Sr1/3MnO3 (LSMO) with Curie temperature above room temperature is the leading compound of the manganite perovskite family. Therefore, the physical properties are desirable for practical applications as magnetic sensors. However, when the dimensions are reduced the ferromagnetic properties of material are weakened. In this research, we have grown La2/3Sr1/3MnO3/SrTiO3 thin films by sputtering DC at high oxygen pressure at 830°C. X-Ray Diffraction (XRD) analysis reveals that only (0 0 2) LSMO peak are present, indicating a textured growth. The samples morphology was characterized by Atomic Force Microscopy (AFM). Additionally, LSMO microwires were patterned by UV lithography; the devices are a well-defined channel with current and voltage leads enabling four points resistance measurements. Resistivity versus temperature curves displays typical manganite behaviour with metal-insulator transition ∼350K. We study the electric and magnetotransport properties in LSMO film and in wire channel and their dependence with size (width and length) for potential applications like magnetic sensors.

  6. Concurrent ionic migration and electronic effects at the memristive TiO x /La1/3Ca2/3MnO3-x interface

    NASA Astrophysics Data System (ADS)

    Román Acevedo, W.; Ferreyra, C.; Sánchez, M. J.; Acha, C.; Gay, R.; Rubi, D.

    2018-03-01

    The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiO x /La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiO x and La1/3Ca2/3MnO3-x , respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.

  7. Double MITs and magnetoresistance: an intrinsic feature of Ru substituted La0.67Ca0.33MnO3

    NASA Astrophysics Data System (ADS)

    Seetha Lakshmi, L.; Sridharan, V.; Sukumar, A. A.; Kamruddin, M.; Sastry, V. S.; Raju, V. S.

    2006-05-01

    In this paper, we examine the possible influence of extrinsic factors on the electrical and magnetotransport of La0.67Ca0.33Mn1-xRuxO3 (x<=0.10). Ru substitution results in double metal-insulator transitions (MITs) at TMI1 and TMI2, both exhibiting magnetoresistance (MR). No additional magnetic signal corresponding to a second low-temperature maximum (LTM) at TMI2 could be observed, either in ac susceptibility (χ') or in specific heat (Cp). Typical grain sizes of ~18 000-20 000 nm, as estimated from the scanning electron microscope (SEM) micrographs, are not so small as to warrant an LTM. The absence of additional peaks in the high statistics powder x-ray diffraction (XRD), a linear systematic increase of the unit cell parameters, close matching of the transition temperatures in resistivity, χ' and Cp and their linear systematic decrease with x, and an homogeneous distribution of Mn, Ru and O at arbitrarily selected regions within and across the grains exclude chemical inhomogeneity in the samples. The insensitivity of grain boundary MR at 5 K to Ru composition indicates that the grain boundary is not altered to result in an LTM. Oxygen stoichiometry of all the compounds is close to the nominal value of 3. These results not only exclude the extrinsic factors, but also establish that double MITs, both exhibiting MR, are intrinsic to Ru substituted La0.67Ca0.33MnO3.

  8. Tuning the magnetic phase transition and the magnetocaloric properties of La0.7Ca0.3MnO3 compounds through Sm-doping

    NASA Astrophysics Data System (ADS)

    Thanh, Tran Dang; Dung, Nguyen Thi; Van Dang, Nguyen; Bau, Le Viet; Piao, Hong-Guang; Phan, The Long; Huyen Yen, Pham Duc; Hau, Kieu Xuan; Kim, Dong-Hyun; Yu, Seong-Cho

    2018-05-01

    In this work, we point out that the width and the nature of the magnetic phase transition, TC value, and as well as magnetocaloric effect in La0.7-xSmxCa0.3MnO3 compounds can be easily modified through Sm-doped into La-site. With an increasing Sm concentration, a systematic decrease in the magnetization, TC, and magnetic entropy change (ΔSm) are observed. The Arrott-plot proveds that the samples with x = 0 and 0.1 undergoing a first-order phase transition. Meanwhile, sample x = 0.2 undergoes a second-order phase transition, which exhibits a high value of the relative cooling power (81.5 J/kg at ΔH = 10 kOe). An analysis of the critical behavior based on the modified Arrott plots method has been done for sample x = 0.2. The results proved a coexistence of the long- and short-range interactions in La0.5Sm0.2Ca0.3MnO3 compound.

  9. Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

    DOE PAGES

    Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin; ...

    2017-05-01

    Pyrochlore-structure oxides, A 2B 2O 7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. In this paper, the mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La 2Zr 2O 7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr + at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopymore » (STEM). At lower doses, the surface of the La 2Zr 2O 7 film amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La 2Zr 2O 7, the bandgap of a thick La 2Zr 2O 7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.« less

  10. Ferroelectricity in CaTiO3 Single Crystal Surfaces and Thin Films and Probed by Nonlinear Optics and Raman Spectroscopy

    NASA Astrophysics Data System (ADS)

    Vlahos, Eftihia; Lummen, Tom; Haislmaier, Ryan; Denev, Sava; Brooks, Charles; Biegalski, Michael; Schlom, Darrell; Eklund, Carl-Johan; Rabe, Karin; Fennie, Craig; Gopalan, Venkatraman

    2011-03-01

    Bulk CaTi O3 has a centrosymmetric point group and is not polar or ferroelectric. However, we present surprising results that show highly regular polar domains in single crystals of CaTi O3 . Confocal Second Harmonic Generation (SHG) and Raman imaging studies were carried out on perovskite CaTi O3 crystal surfaces. They reveal large, crystallographic polar domains at room temperature, with in-plane polarization components delineated by twin walls. SHG analysis indicates that the highest symmetry of the polar surface is m (space group P c) with polarization in the m plane. In addition, we present results of the polar domain structure imaged before and after the application of an external electric field. Finally, we present the SHG studies of CaTi O3 thin films grown using reactive Molecular Beam Epitaxy (MBE); these films are predicted by theory to be ferroelectric and are shown experimentally, both with SHG and in-plane dielectric measurements, to be ferroelectric for temperatures less than ~ 150 K with group symmetry mm2.

  11. Crystallographic and magnetic properties of sol-gel synthesized T xCo 1-xFe 2O 4 (T=Mn and Cr) thin films

    NASA Astrophysics Data System (ADS)

    Kim, Kwang Joo; Kyung Kim, Hee; Ran Park, Young; Choi, Seung-li; Eun Kim, Sung; Jung Lee, Hee; Yun Park, Jae; Jin Kim, Sam

    Effects of Mn and Cr substitution for Co on crystallographic and magnetic properties of inverse-spinel CoFe 2O 4 thin films were investigated. The crystal structure of the samples remain cubic for x<1 with the lattice constant ( a0) increasing with x for Mn doping and remaining constant for Cr doping. Tetrahedral Fe 2+ ions were detected in Cr xCo 1-xFe 2O 4 by Mössbauer spectroscopy while no such ions existed in Mn xCo 1-xFe 2O 4. The appearance of the tetrahedral Fe 2+ ions can be explained in terms of the Cr 3+ substitution for the octahedral Co 2+ sites with the resultant charge imbalance being compensated by a reduction of the tetrahedral Fe 3+ into Fe 2+. The observed variation in a0 and magnetic properties can be partly explained in terms of Mn 2+ and Cr 3+ substitution of octahedral sites in Mn xCo 1-xFe 2O 4 and Cr xCo 1-xFe 2O 4, respectively.

  12. Dielectric response and structure of in-plane tensile strained BaTiO3 thin films grown on the LaNiO3 buffered Si substrate

    NASA Astrophysics Data System (ADS)

    Qiao, Liang; Bi, Xiaofang

    2008-02-01

    Highly (001)-textured BaTiO3 films were grown epitaxially on the LaNiO3 buffered Si substrate. A strong in-plane tensile strain has been revealed by using x-ray diffraction and high resolution transmission electron microscopy. The BaTiO3 film has exhibited a small remnant polarization, indicating the presence of ca1/ca2/ca1/ca2 polydomain state in the film. Temperature dependent dielectric permittivity has demonstrated that two phase transitions occurred at respective temperatures of 170 and 30°C. The result was discussed in detail based on the misfit strain-temperature phase diagrams theory.

  13. Spectroscopic Study of Deep Level Emissions from Acceptor Defects in ZnO Thin Films with Oxygen Rich Stoichiometry

    NASA Astrophysics Data System (ADS)

    Ilyas, Usman; Rawat, R. S.; Tan, T. L.

    2013-10-01

    This paper reports the tailoring of acceptor defects in oxygen rich ZnO thin films at different post-deposition annealing temperatures (500-800°C) and Mn doping concentrations. The XRD spectra exhibited the nanocrystalline nature of ZnO thin films along with inconsistent variation in lattice parameters suggesting the temperature-dependent activation of structural defects. Photoluminescence emission spectra revealed the temperature dependent variation in deep level emissions (DLE) with the presence of acceptors as dominating defects. The concentration of native defects was estimated to be increased with temperature while a reverse trend was observed for those with increasing doping concentration. A consistent decrease in DLE spectra, with increasing Mn content, revealed the quenching of structural defects in the optical band gap of ZnO favorable for good quality thin films with enhanced optical transparency.

  14. Appearance and disappearance of ferromagnetism in ultrathin LaMnO3 on SrTiO3 substrate: A viewpoint from first principles

    NASA Astrophysics Data System (ADS)

    An, Ming; Weng, Yakui; Zhang, Huimin; Zhang, Jun-Jie; Zhang, Yang; Dong, Shuai

    2017-12-01

    The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultrathin LaMnO3 films on the most commonly used SrTiO3 substrate is a long-existing question under debate. Either strain effect or nonstoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [X. R. Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, and H. Hilgenkamp, Science 349, 716 (2015), 10.1126/science.aaa5198], one more mechanism, namely, the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultrathin LaMnO3 films as well as superlattices. Starting from the very precise descriptions of both LaMnO3 and SrTiO3, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO3 layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO3/SrTiO3 heterostructures. Our paper not only explains the long-term puzzle regarding the magnetism of ultrathin LaMnO3 films but also sheds light on how to overcome the notorious magnetic dead layer in ultrathin manganites.

  15. Study of electronic sputtering of CaF2 thin films

    NASA Astrophysics Data System (ADS)

    Pandey, Ratnesh K.; Kumar, Manvendra; Khan, Saif A.; Kumar, Tanuj; Tripathi, Ambuj; Avasthi, D. K.; Pandey, Avinash C.

    2014-01-01

    In the present work thin films of CaF2 deposited on Si substrate by electron beam evaporation have been investigated for swift heavy ions induced sputtering and surface modifications. Glancing angle X-ray Diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was performed to determine the sputter yield of CaF2 and a decrease in sputter yield has been observed with increase in film thickness. Thermal spike model has been applied to explain this. The confinement of energy in the grains having size smaller than the electron mean free path (λ) results in a higher sputtering yield. Atomic force microscopy (AFM) studies of irradiated CaF2 thin films show formation of cracks on film surface at a fluence of 5 × 1012 ions/cm2. Also RBS results confirm the removal of film from the surface and more exposure of substrate with increasing dose of ions.

  16. Superconductor to Mott insulator transition in YBa 2Cu 3O 7/LaCaMnO 3 heterostructures

    DOE PAGES

    Gray, B. A.; Middey, S.; Conti, G.; ...

    2016-09-15

    The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In this paper, in pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa 2Cu 3O 7 (YBCO) and colossal magnetoresistance ferromagnet La 0.67Ca 0.33MnO 3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping inmore » cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Finally, such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.« less

  17. Electric Field Control of Interfacial Ferromagnetism in CaMnO3/CaRuO3 Heterostructures

    NASA Astrophysics Data System (ADS)

    Grutter, A. J.; Kirby, B. J.; Gray, M. T.; Flint, C. L.; Alaan, U. S.; Suzuki, Y.; Borchers, J. A.

    2015-07-01

    New mechanisms for achieving direct electric field control of ferromagnetism are highly desirable in the development of functional magnetic interfaces. To that end, we have probed the electric field dependence of the emergent ferromagnetic layer at CaRuO3/CaMnO3 interfaces in bilayers fabricated on SrTiO3. Using polarized neutron reflectometry, we are able to detect the ferromagnetic signal arising from a single atomic monolayer of CaMnO3, manifested as a spin asymmetry in the reflectivity. We find that the application of an electric field of 600 kV /m across the bilayer induces a significant increase in this spin asymmetry. Modeling of the reflectivity suggests that this increase corresponds to a transition from canted antiferromagnetism to full ferromagnetic alignment of the Mn4 + ions at the interface. This increase from 1 μB to 2.5 - 3.0 μB per Mn is indicative of a strong magnetoelectric coupling effect, and such direct electric field control of the magnetization at an interface has significant potential for spintronic applications.

  18. Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

    NASA Astrophysics Data System (ADS)

    Katiyar, R. K.; Sharma, Y.; Barrionuevo, D.; Kooriyattil, S.; Pavunny, S. P.; Young, J. S.; Morell, G.; Weiner, B. R.; Katiyar, R. S.; Scott, J. F.

    2015-02-01

    Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ˜0.20 V and ˜1.35 mA/cm2, respectively. The band gap of the films was determined to be ˜2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PV properties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

  19. Preparation and Ferroelectric Property of (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 Thin Film on Pt/Ti/SiO2/Si Substrate

    NASA Astrophysics Data System (ADS)

    Fan, Suhua; Che, Quande; Zhang, Fengqing

    The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

  20. Chemical disorder influence on magnetic state of optimally-doped La0.7Ca0.3MnO3

    NASA Astrophysics Data System (ADS)

    Rozenberg, E.; Auslender, M.; Shames, A. I.; Jung, G.; Felner, I.; Tsindlekht, M. I.; Mogilyansky, D.; Sominski, E.; Gedanken, A.; Mukovskii, Ya. M.; Gorodetsky, G.

    2011-10-01

    X-band electron magnetic resonance and dc/ac magnetic measurements have been employed to study the effects of chemical disorder on magnetic ordering in bulk and nanometer-sized single crystals and bulk ceramics of optimally-doped La0.7Ca0.3MnO3 manganite. The magnetic ground state of bulk samples appeared to be ferromagnetic with the lower Curie temperature and higher magnetic homogeneity in the vicinity of the ferromagnetic-paramagnetic phase transition in the crystal, as compared with those characteristics in the ceramics. The influence of technological driven "macroscopic" fluctuations of Ca-dopant level in crystal and "mesoscopic" disorder within grain boundary regions in ceramics was proposed to be responsible for these effects. Surface spin disorder together with pronounced inter-particle interactions within agglomerated nano-sample results in well defined core/shell spin configuration in La0.7Ca0.3MnO3 nano-crystals. The analysis of the electron paramagnetic resonance data enlightened the reasons for the observed difference in the magnetic order. Lattice effects dominate the first-order nature of magnetic phase transition in bulk samples. However, mesoscale chemical disorder seems to be responsible for the appearance of small ferromagnetic polarons in the paramagnetic state of bulk ceramics. The experimental results and their analysis indicate that a chemical/magnetic disorder has a strong impact on the magnetic state even in the case of mostly stable optimally hole-doped manganites.

  1. Checkerboard deposition of lithium manganese oxide spinel (LiMn2O4) by RF magnetron sputtering on a stainless steel in all-solid-state thin film battery

    NASA Astrophysics Data System (ADS)

    Hsueh, T. H.; Yu, Y. Q.; Jan, D. J.; Su, C. H.; Chang, S. M.

    2018-03-01

    All-solid-state thin film lithium batteries (TFLBs) are the most competitive low-power sources to be applied in various kinds of micro-electro-mechanical systems and have been draw a lot of attention in academic research. In this paper, the checkerboard deposition of all-solid-state TFLB was composed of thin film lithium metal anode, lithium phosphorus oxynitride (LiPON) solid electrolyte, and checkerboard deposition of lithium manganese oxide spinel (LiMn2O4) cathode. The LiPON and LiMn2O4 were deposited by a radio frequency magnetron sputtering system, and the lithium metal was deposited by a thermal evaporation coater. The electrochemical characterization of this lithium battery showed the first discharge capacity of 107.8 μAh and the capacity retention was achieved 95.5% after 150 charge-discharge cycles between 4.3V and 3V at a current density of 11 μA/cm2 (0.5C). Obviously, the checkerboard of thin film increased the charge exchange rate; also this lithium battery exhibited high C-rate performance, with better capacity retention of 82% at 220 μA/cm2 (10C).

  2. Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films

    PubMed Central

    Cheng, Sheng; Lu, Jiangbo; Han, Dong; Liu, Ming; Lu, Xiaoli; Ma, Chunrui; Zhang, Shengbai; Chen, Chonglin

    2016-01-01

    Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo2O5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo2O5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo2O5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo2O6 (δ = 0.5). The discrepancy of energy band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Hence, LaBaCo2O5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere. PMID:27876830

  3. Chemically prepared La2Se3 nanocubes thin film for supercapacitor application.

    PubMed

    Patil, S J; Lokhande, V C; Chodankar, N R; Lokhande, C D

    2016-05-01

    Lanthanum selenide (La2Se3) nanocubes thin film is prepared via successive ionic layer adsorption and reaction (SILAR) method and utilized for energy storage application. The prepared La2Se3 thin film is characterized by X-ray diffraction, field emission scanning electron microscopy and contact angle measurement techniques for structural, surface morphological and wettability studies, respectively. Energy dispersive X-ray microanalysis (EDAX) is performed in order to obtain the elemental composition of the thin film. The La2Se3 film electrode shows a maximum specific capacitance of 363 F g(-1) in a 0.8 M LiClO4/PC electrolyte at a scan rate of 5 mV s(-1) within 1.3 V/SCE potential range. The specific capacitive retention of 83 % of La2Se3 film electrode is obtained over 1000 cyclic voltammetry cycles. The predominant performance, such as high energy (80 Wh kg(-1)) and power density (2.5 kW kg(-1)), indicates that La2Se3 film electrode facilitates fast ion diffusion during redox processes. Copyright © 2016 Elsevier Inc. All rights reserved.

  4. Structural Diversities in Heterometallic Mn-Ca Cluster Chemistry from the Use of Salicylhydroxamic Acid: {MnIII4Ca2}, {MnII/III6Ca2}, {MnIII/IV8Ca}, and {MnIII8Ca2} Complexes with Relevance to Both High- and Low-Valent States of the Oxygen-Evolving Complex.

    PubMed

    Alaimo, Alysha A; Koumousi, Evangelia S; Cunha-Silva, Luís; McCormick, Laura J; Teat, Simon J; Psycharis, Vassilis; Raptopoulou, Catherine P; Mukherjee, Shreya; Li, Chaoran; Gupta, Sayak Das; Escuer, Albert; Christou, George; Stamatatos, Theocharis C

    2017-09-05

    One-pot reactions between the [Mn 3 O(O 2 CPh) 6 (py) x ] +/0 triangular precursors and either CaBr 2 ·xH 2 O or CaCl 2 ·6H 2 O, in the presence of salicylhydroxamic acid (shaH 2 ), have afforded the heterometallic complexes [Mn III 4 Ca 2 (O 2 CPh) 4 (shi) 4 (H 2 O) 3 (Me 2 CO)] (1) and (pyH)[Mn II 2 Mn III 4 Ca 2 Cl 2 (O 2 CPh) 7 (shi) 4 (py) 4 ] (2), respectively, in good yields. Further reactions but using a more flexible synthetic scheme comprising the Mn(NO 3 ) 2 ·4H 2 O/Ca(NO 3 ) 2 ·4H 2 O and Mn(O 2 CPh) 2 ·2H 2 O/Ca(ClO 4 ) 2 ·4H 2 O "metal blends" and shaH 2 , in the presence of external base NEt 3 , led to the new complexes (NHEt 3 ) 2 [Mn III 4 Mn IV 4 Ca(OEt) 2 (shi) 10 (EtOH) 2 ] (3) and (NHEt 3 ) 4 [Mn III 8 Ca 2 (CO 3 ) 4 (shi) 8 ] (4), respectively. In all reported compounds, the anion of the tetradentate (N,O,O,O)-chelating/bridging ligand salicylhydroxime (shi 3- ), resulting from the in situ metal-ion-assisted amide-iminol tautomerism of shaH 2 , was found to bridge both Mn and Ca atoms. Complexes 1-4 exhibit a variety of different structures, metal stoichiometries, and Mn oxidation-state descriptions; 1 possesses an overall octahedral metal arrangement, 2 can be described as a Mn 4 Ca 2 octahedron bound to an additional Mn 2 unit, 3 consists of a Mn 8 "ring" surrounding a Ca II atom, and 4 adopts a rectangular cuboidal motif of eight Mn atoms accommodating two Ca II atoms. Solid-state direct-current magnetic susceptibility studies revealed the presence of predominant antiferromagnetic exchange interactions between the Mn centers, leading to S = 0 spin ground-state values for all complexes. From a bioinorganic chemistry perspective, the reported compounds may demonstrate some relevance to both high-valent scheme (3) and lower-oxidation-level species (1, 2, and 4) of the catalytic cycle of the oxygen-evolving complex.

  5. Perrierite-(La), (La,Ce,Ca)4(Fe2+,Mn)(Ti,Fe3+,Al)4(Si2O7)2O8, a new mineral species from the Eifel volcanic district, Germany

    NASA Astrophysics Data System (ADS)

    Chukanov, N. V.; Blass, G.; Pekov, I. V.; Belakovskiy, D. I.; Van, K. V.; Rastsvetaeva, R. K.; Aksenov, S. M.

    2012-12-01

    Non-metamict perrierite-(La) discovered in the Dellen pumice quarry, near Mendig, in the Eifel volcanic district, Rheinland-Pfalz, Germany has been approved as a new mineral species (IMA no. 2010-089). The mineral was found in the late assemblage of sanidine, phlogopite, pyrophanite, zirconolite, members of the jacobsite-magnetite series, fluorcalciopyrochlore, and zircon. Perrierite-(La) occurs as isolated prismatic crystals up to 0.5 × 1 mm in size within cavities in sanidinite. The new mineral is black with brown streak; it is brittle, with the Mohs hardness of 6 and distinct cleavage parallel to (001). The calculated density is 4.791 g/cm3. The IR spectrum does not contain absorption bands that correspond to H2O and OH groups. Perrierite-(La) is biaxial (-), α = 1.94(1), β = 2.020(15), γ = 2.040(15), 2 V meas = 50(10)°, 2 V calc = 51°. The chemical composition (electron microprobe, average of seven point analyses, the Fe2+/Fe3+ ratio determined from the X-ray structural data, wt %) is as follows: 3.26 CaO, 22.92 La2O3, 19.64 Ce2O3, 0.83 Pr2O2, 2.09 Nd2O3, 0.25 MgO, 2.25 MnO, 3.16 FeO, 5.28 Fe2O3, 2.59 Al2O3, 16.13 TiO2, 0.75 Nb2O5, and 20.06 SiO2, total is 99.21. The empirical formula is (La1.70Ce1.45Nd0.15Pr0.06Ca0.70)Σ4.06(Fe{0.53/2+}Mn0.38Mg0.08)Σ0.99(Ti2.44Fe{0.80/3+}Al0.62Nb0.07)Σ3.93Si4.04O22. The simplified formula is (La,Ce,Ca)4(Fe2+,Mn)(Ti,Fe3+,Al)4(Si2O7)2O8. The crystal structure was determined by a single crystal. Perrierite-(La) is monoclinic, space group P21/ a, and the unit-cell dimensions are as follows: a =13.668(1), b = 5.6601(6), c = 11.743(1) Å, β = 113.64(1)°; V = 832.2(2) Å3, Z = 2. The strong reflections in the X-ray powder diffraction pattern are [ d, Å ( I, %) ( hkl)]: 5.19 (40) (110), 3.53 (40) (overline 3 11), 2.96 (100) (overline 3 13, 311), 2.80 (50) (020), 2.14 (50) (overline 4 22, overline 3 15, 313), 1.947 (50) (024, 223), 1.657 (40) (overline 4 07, overline 4 33, 331). The holotype specimen of perrierite-(La) is

  6. Weak ferromagnetism and short range polar order in NaMnF3 thin films

    NASA Astrophysics Data System (ADS)

    Kc, Amit; Borisov, Pavel; Shvartsman, Vladimir; Lederman, David

    The orthorhombically distorted perovskite NaMnF3 has been predicted to become ferroelectric if an a = c distortion of the bulk Pnma structure is imposed. In order to test this prediction, NaMnF3 thin films were grown on SrTiO3 (100) single crystal substrates via molecular beam epitaxy. The best films were smooth and single phase with four different twin domains. In-plane magnetization measurements revealed the presence of antiferromagnetic ordering with weak ferromagnetism below the Néel temperature TN = 66 K. For the dielectric studies, NaMnF3 films were grown on a 30 nm SrRuO3 (100) layer used as a bottom electrode grown via pulsed laser deposition. The complex permittivity as a function of frequency indicated a strong Debye-like relaxation contribution characterized by a distribution of relaxation times. A power-law divergence of the characteristic relaxation time revealed an order-disorder phase transition at 8 K. The slow relaxation dynamics indicated the formation of super-dipoles (superparaelectric moments) that extend over several unit cells, similar to polar nanoregions of relaxor ferroelectrics. This work was supported by the National Science Foundation (Grant 1434897) and the WVU Shared Research Facilities at West Virginia University.

  7. Lattice distortion and strain relaxation in epitaxial thin films of multiferroic TbMnO3 probed by X-ray diffractometry and micro-Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Hu, Y.; Stender, D.; Medarde, M.; Lippert, T.; Wokaun, A.; Schneider, C. W.

    2013-08-01

    A detailed structural XRD analysis of (1 1 0)-oriented TbMnO3 thin films grown on (1 1 0)-YAlO3 substrates shows the co-existence of a strained and relaxed "sublayer" within the films due to strain relaxation during epitaxial growth by pulsed laser deposition. The substrate-film lattice mismatch yields a compressive strain anisotropy along the two in-plane directions, i.e. [1 -1 0] and [0 0 1] and a monoclinic distortion. A further manifestation of the growth-induced strain is the hardening of Raman active modes as a result of changed atomic motions along the [1 -1 0] and [0 0 1] directions.

  8. Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin

    2017-05-01

    Pyrochlore-structure oxides, A2B2O7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. The mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La2Zr2O7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr+ at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopy (STEM). At lower doses, the surface of the La2Zr2O7 filmmore » amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La2Zr2O7, the bandgap of a thick La2Zr2O7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.« less

  9. Double MITs and magnetoresistance: an intrinsic feature of Ru substituted La(0.67)Ca(0.33)MnO(3).

    PubMed

    Seetha Lakshmi, L; Sridharan, V; Sukumar, A A; Kamruddin, M; Sastry, V S; Raju, V S

    2006-05-03

    In this paper, we examine the possible influence of extrinsic factors on the electrical and magnetotransport of La(0.67)Ca(0.33)Mn(1-x)Ru(x)O(3) (x≤0.10). Ru substitution results in double metal-insulator transitions (MITs) at T(MI1) and T(MI2), both exhibiting magnetoresistance (MR). No additional magnetic signal corresponding to a second low-temperature maximum (LTM) at T(MI2) could be observed, either in ac susceptibility (χ(')) or in specific heat (C(p)). Typical grain sizes of ∼18 000-20 000 nm, as estimated from the scanning electron microscope (SEM) micrographs, are not so small as to warrant an LTM. The absence of additional peaks in the high statistics powder x-ray diffraction (XRD), a linear systematic increase of the unit cell parameters, close matching of the transition temperatures in resistivity, χ(') and C(p) and their linear systematic decrease with x, and an homogeneous distribution of Mn, Ru and O at arbitrarily selected regions within and across the grains exclude chemical inhomogeneity in the samples. The insensitivity of grain boundary MR at 5 K to Ru composition indicates that the grain boundary is not altered to result in an LTM. Oxygen stoichiometry of all the compounds is close to the nominal value of 3. These results not only exclude the extrinsic factors, but also establish that double MITs, both exhibiting MR, are intrinsic to Ru substituted La(0.67)Ca(0.33)MnO(3).

  10. Rectifying and photovoltaic properties of the heterojunction composed of CaMnO3 and Nb-doped SrTiO3

    NASA Astrophysics Data System (ADS)

    Sun, J. R.; Zhang, S. Y.; Shen, B. G.; Wong, H. K.

    2005-01-01

    A heterojunction composed of CaMnO3 (CMO) and Nb-doped SrTiO3 (STON) was fabricated and its properties were studied and compared with La0.67Ca0.33MnO3/STON and LaMnO3+δ/STON p-n, junctions. This CMO/STON junction exhibits an asymmetric current-voltage relation similar to a p-n junction. The most remarkable discovery is that the magnetic state of the manganites has a strong impact on the rectifying behaviors. The diffusion voltage, which is the critical voltage for the current rush, shows a tendency to decrease/increase with the establishment of the antiferromagnetic/ferromagnetic order in the manganites of the junction. Similar to other manganite p-n junctions, CMO/STON also exhibits a significant photovoltaic effect, and the maximum photovoltage is ˜2.2mV under the illumination of ˜7mW light (λ=460nm). A qualitative explanation is given based on an analysis on the band diagram of the junctions.

  11. Room temperature ferromagnetism in BiFe1-xMnxO3 thin film induced by spin-structure manipulation

    NASA Astrophysics Data System (ADS)

    Shigematsu, Kei; Asakura, Takeshi; Yamamoto, Hajime; Shimizu, Keisuke; Katsumata, Marin; Shimizu, Haruki; Sakai, Yuki; Hojo, Hajime; Mibu, Ko; Azuma, Masaki

    2018-05-01

    The evolution of crystal structure, spin structure, and macroscopic magnetization of manganese-substituted BiFeO3 (BiFe1-xMnxO3), a candidate for multiferroic materials, were investigated on bulk and epitaxial thin-film. Mn substitution for Fe induced collinear antiferromagnetic spin structure around room temperature by destabilizing the cycloidal spin modulation which prohibited the appearance of net magnetization generated by Dzyaloshinskii-Moriya interaction. For the bulk samples, however, no significant signal of ferromagnetism was observed because the direction of the ordered spins was close to parallel to the electric polarization so that spin-canting did not occur. On the contrary, BiFe1-xMnxO3 thin film on SrTiO3 (001) had a collinear spin structure with the spin direction perpendicular to the electric polarization at room temperature, where the appearance of spontaneous magnetization was expected. Indeed, ferromagnetic hysteresis behavior was observed for BiFe0.9Mn0.1O3 thin film.

  12. Morphology-dependent photo-induced polarization recovery in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.

    2017-08-01

    We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.

  13. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La 1-xCa xMnO 3

    DOE PAGES

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; ...

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO 3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO 6 octahedra across the OR transition at T S~720 K.more » The study utilized explicit two-phase PDF structural modeling, revealing that away from T MI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO 3. The results hence do not support the percolative scenario for the MI transition in La 1–xCa xMnO 3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO 3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  14. Tuning the dead-layer behavior of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} via interfacial engineering

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Peng, R.; Xu, H. C.; Xia, M.

    The dead-layer behavior, deterioration of the bulk properties in near-interface layers, restricts the applications of many oxide heterostructures. We present the systematic study of the dead-layer in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} grown by ozone-assisted molecular beam epitaxy. Dead-layer behavior is systematically tuned by varying the interfacial doping, while unchanged with varied doping at any other atomic layers. In situ photoemission and low energy electron diffraction measurements suggest intrinsic oxygen vacancies at the surface of ultra-thin La{sub 0.67}Sr{sub 0.33}MnO{sub 3}, which are more concentrated in thinner films. Our results show correlation between interfacial doping, oxygen vacancies, and the dead-layer, whichmore » can be explained by a simplified electrostatic model.« less

  15. Template assisted strain tuning and phase stabilization in epitaxial BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Saj Mohan M., M.; Ramadurai, Ranjith

    2018-04-01

    Strain engineering is a key to develop novel properties in functional materials. We report a strain mediated phase stabilization and epitaxial growth of bismuth ferrite(BiFeO3) thin films on LaAlO3 (LAO) substrates. The strain in the epitaxial layer is controlled by controlling the thickness of bottom electrode where the thickness of the BFO is kept constant. The thickness of La0.7Sr0.3MnO3(LSMO) template layer was optimized to grow completely strained tetragonal, tetragonal/rhombohedral mixed phase and fully relaxed rhombohedral phase of BFO layers. The results were confirmed with coupled-θ-2θ scan, and small area reciprocal space mapping. The piezoelectric d33 (˜ 45-48 pm/V) coefficient of the mixed phase was relatively larger than the strained tetragonal and relaxed rhombohedral phase for a given thickness.

  16. Electric-field control of electronic transport properties and enhanced magnetoresistance in La0.7Sr0.3MnO3/0.5BaZr0.2Ti0.8O3-0.5Ba0.7Ca0.3TiO3 lead-free multiferroic structures

    NASA Astrophysics Data System (ADS)

    Yan, Jian-Min; Gao, Guan-Yin; Liu, Yu-Kuai; Wang, Fei-Fei; Zheng, Ren-Kui

    2017-10-01

    We report the fabrication of lead-free multiferroic structures by depositing ferromagnetic La0.7Sr0.3MnO3 (LSMO) polycrystalline films on polished 0.5BaZr0.2Ti0.8O3-0.5Ba0.7Ca0.3TiO3 (BZT-BCT) piezoelectric ceramic substrates. By applying electric fields to the BZT-BCT along the thickness direction, the resistivity of LSMO films can be effectively manipulated via the piezoelectric strain of the BZT-BCT. Moreover, the LSMO polycrystalline films exhibit almost temperature independent and significantly enhanced magnetoresistance (MR) below TC. At T = 2 K and H = 8 T, the MR of polycrystalline films is approximately two orders of magnitude higher than that of LSMO epitaxial films grown on (LaAlO3)0.3(SrAl1/2Ta1/2O3)0.7 single-crystal substrates. The enhanced MR mainly results from the spin-polarized tunneling of charge carriers across grain boundaries. The LSMO/BZT-BCT structures with electric-field controllable modulation of resistivity and enhanced MR effect may have potential applications in low-energy consumption and environmentally friendly electronic devices.

  17. Magnetic and magnetotransport properties of the orthorhombic perovskites (Lu,Ca)MnO3

    NASA Astrophysics Data System (ADS)

    Imamura, N.; Karppinen, M.; Motohashi, T.; Yamauchi, H.

    2008-01-01

    Here we extend the research of the (R,Ca)MnO3 perovskites to the smallest- R end member (Lu,Ca)MnO3 . Magnetic and magnetotransport properties of the (Lu1-xCax)MnO3 system are systematically investigated in regard to carrier doping. It is found that hole doping into the antiferromagnetic x=0.0 phase, LuMnO3 , causes a spin-glass-like magnetic competition in the wide doping range of 0.1≤x≤0.6 , whereas electron doping into the antiferromagnetic x=1.0 phase, CaMnO3 , induces a large magnetoresistance effect for 0.8≤x≤0.95 .

  18. Reversible control of magnetism in La 0.67Sr 0.33MnO 3 through chemically-induced oxygen migration

    DOE PAGES

    Grutter, A. J.; Gilbert, D. A.; Alaan, U. S.; ...

    2016-02-22

    We demonstrate reversible control of magnetization and anisotropy in La 0.67Sr 0.33MnO 3 films through interfacial oxygen migration. Gd metal capping layers deposited onto La 0.67Sr 0.33MnO 3 leach oxygen from the film through a solid-state redox reaction to form porous Gd 2O 3. X-ray absorption and polarized neutron reflectometry measurements show Mn valence alterations consistent with high oxygen vacancy concentrations, resulting in suppressed magnetization and increased coercive fields. Effects of the oxygen migration are observed both at the interface and also throughout the majority of a 40 nm thick film, suggesting extensive diffusion of oxygen vacancies. After Gd-capped Lamore » 0.67Sr 0.33MnO 3 is exposed to atmospheric oxygen for a prolonged period of time, oxygen diffuses through the Gd 2O 3 layer and the magnetization of the La 0.67Sr 0.33MnO 3 returns to the uncapped value. In conclusion, these findings showcase perovskite heterostructures as ideal candidates for developing functional interfaces through chemically-induced oxygen migration.« less

  19. Electrical contacts to thin layers of Bi2Sr2CaCu2O8+δ

    NASA Astrophysics Data System (ADS)

    Suzuki, Shota; Taniguchi, Hiroki; Kawakami, Tsukasa; Cosset-Cheneau, Maxen; Arakawa, Tomonori; Miyasaka, Shigeki; Tajima, Setsuko; Niimi, Yasuhiro; Kobayashi, Kensuke

    2018-05-01

    Thin layers of Bi2Sr2CaCu2O8+δ (Bi2212) were fabricated using the mechanical exfoliation technique. Good electrical contacts to the thin Bi2212 films with low contact resistance were realized by depositing Ag and Au electrodes onto the Bi2212 films and annealing them with an oxygen flow at 350 °C for 30 min. We observed cross-section images of the Bi2212 thin film device using a transmission electron microscope to characterize the diffusion of Ag and Au atoms into the Bi2212 thin film.

  20. Magnetodielectric behaviour in La0.53Ca0.47MnO3

    NASA Astrophysics Data System (ADS)

    Pandey, Suchita; Kumar, Jitender; Awasthi, A. M.

    2014-10-01

    We explore magneto-dielectricity in La0.53Ca0.47MnO3 across its paramagnetic (PMI) to ferromagnetic (FMM) isostructural transition at TC ˜ 253 K, by magnetic (M), caloric (W), dielectric (ɛ‧), magnetoresistive (MR), and magnetocapacitance (MC) investigations. A skew-broadened first-order transition character is confirmed via heating/cooling hystereses in M(T) and W(T), with a superheating temperature T** next to TC and supercooling temperature T* exhibiting kinetics. Above TC, linearly related MC and MR reflect purely a magnetoresistance effect. Near TC, the high-frequency MC (5 Tesla (T)), far exceeds the magneto-losses, and is uncorrelated with dc MR (5 T) in the FM-ordered state. The intrinsic magneto-dielectricity manifest below TC and above ˜kHz is traced to an intra-granular Maxwell-Wagner-type effect at the interface region of PMI-FMM phase coexistence.

  1. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  2. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    PubMed

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Investigation on the growth of CaCu 3Ti 4O 12 thin film and the origins of its dielectric relaxations

    NASA Astrophysics Data System (ADS)

    Yuan, Wen-Xiang; Hark, S. K.; Xu, H. Y.; Mei, W. N.

    2012-01-01

    Using the radio frequency magnetron sputtering, CaCu 3Ti 4O 12 (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ˜10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.

  4. Study of the electronic structure and half-metallicity of CaMnO3/BaTiO3 superlattice

    NASA Astrophysics Data System (ADS)

    Wang, Kai; Jiang, Wei; Chen, Jun-Nan; Huang, Jian-Qi

    2016-09-01

    In this paper, the electronic structure, magnetic properties and half-metallicity of the CaMnO3/BaTiO3 superlattice are investigated by employing the first-principle calculation based on density functional theory within the GGA or GGA + U exchange-correlation functional. The CaMnO3/BaTiO3 superlattice is constructed by the cubic CaMnO3 and the tetragonal ferroelectric BaTiO3 growing alternately along (0 0 1) direction. The cubic CaMnO3 presents a robust half-metallicity and a metastable ferromagnetic phase. Its magnetic moment is an integral number of 3.000 μB per unit cell. However, the CaMnO3/BaTiO3 superlattice has a stable ferromagnetic phase, for which the magnetic moment is 12.000 μB per unit cell. It also retains the robust half-metallicity which mainly results from the strong hybridization between Mn and O atoms. The results show that the constructed CaMnO3/BaTiO3 superlattice exhibits superior magnetoelectric properties. It may provide a theoretical reference for the design and preparation of new multiferroic materials.

  5. Ferroelectric Sm-Doped BiMnO3 Thin Films with Ferromagnetic Transition Temperature Enhanced to 140 K

    PubMed Central

    2014-01-01

    A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO3 (BSMO) films on SrTiO3 single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO3 (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d33 = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window. The work represents a very effective way to independently control strain in-plane and out-of-plane, which is important not just for BMO but for controlling the properties of many other strongly correlated oxides. PMID:25141031

  6. Above room temperature ferromagnetism in Si:Mn and TiO(2-delta)Co.

    PubMed

    Granovsky, A; Orlov, A; Perov, N; Gan'shina, E; Semisalova, A; Balagurov, L; Kulemanov, I; Sapelkin, A; Rogalev, A; Smekhova, A

    2012-09-01

    We present recent experimental results on the structural, electrical, magnetic, and magneto-optical properties of Mn-implanted Si and Co-doped TiO(2-delta) magnetic oxides. Si wafers, both n- and p-type, with high and low resistivity, were used as the starting materials for implantation with Mn ions at the fluencies up to 5 x 10(16) cm(-2). The saturation magnetization was found to show the lack of any regular dependence on the Si conductivity type, type of impurity and the short post-implantation annealing. According to XMCD Mn impurity in Si does not bear any appreciable magnetic moment at room temperature. The obtained results indicate that above room temperature ferromagnetism in Mn-implanted Si originates not from Mn impurity but rather from structural defects in Si. The TiO(2-delta):Co thin films were deposited on LaAlO3 (001) substrates by magnetron sputtering in the argon-oxygen atmosphere at oxygen partial pressure of 2 x 10(-6)-2 x 10(-4) Torr. The obtained transverse Kerr effect spectra at the visible and XMCD spectra indicate on intrinsic room temperature ferromagnetism in TiO(2-delta):Co thin films at low (< 1%) volume fraction of Co.

  7. Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

    NASA Astrophysics Data System (ADS)

    Pereira, M. J.; Lourenço, A. A. C. S.; Amaral, V. S.

    2014-07-01

    Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

  8. Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2

    NASA Astrophysics Data System (ADS)

    Wang, R.; Huang, Z. X.; Zhao, G. Q.; Yu, S.; Deng, Z.; Jin, C. Q.; Jia, Q. J.; Chen, Y.; Yang, T. Y.; Jiang, X. M.; Cao, L. X.

    2017-04-01

    Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.

  9. Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

    NASA Astrophysics Data System (ADS)

    Schleicher, B.; Niemann, R.; Diestel, A.; Hühne, R.; Schultz, L.; Fähler, S.

    2015-08-01

    Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

  10. Martensitic transformation in as-grown and annealed near-stoichiometric epitaxial Ni2MnGa thin films

    NASA Astrophysics Data System (ADS)

    Machain, P.; Condó, A. M.; Domenichini, P.; Pozo López, G.; Sirena, M.; Correa, V. F.; Haberkorn, N.

    2015-08-01

    Magnetic shape memory nanostructures have a great potential in the field of the nanoactuators. The relationship between dimensionality, microstructure and magnetism characterizes the materials performance. Here, we study the martensitic transformation in supported and free-standing epitaxial Ni47Mn24Ga29 films grown by sputtering on (0 0 1) MgO using a stoichiometric Ni2MnGa target. The films have a Curie temperature of ~390 K and a martensitic transition temperature of ~120 K. Similar transition temperatures have been observed in films with thicknesses of 1, 3 and 4 μm. Thicker films (with longer deposition time) present a wider martensitic transformation range that can be associated with small gradients in their chemical concentration due to the high vapour pressure of Mn and Ga. The magnetic anisotropy of the films shows a strong change below the martensitic transformation temperature. No features associated with variant reorientation induced by magnetic field have been observed. Annealed films in the presence of a Ni2MnGa bulk reference change their chemical composition to Ni49Mn26Ga25. The change in the chemical composition increases the martensitic transformation temperature, being closer to the stoichiometric compound, and reduces the transformation hysteresis. In addition, sharper transformations are obtained, which indicate that chemical inhomogeneities and defects are removed. Our results indicate that the properties of Ni-Mn-Ga thin films grown by sputtering can be optimized (fixing the chemical concentration and removing crystalline defects) by the annealing process, which is promising for the development of micromagnetic shape memory devices.

  11. 90° switching of polarization in La3+-doped SrBi2Ta2O9 thin films

    NASA Astrophysics Data System (ADS)

    Liu, J. S.; Zhang, S. R.; Zeng, H. Z.; Fei, W. D.; Du, S. Y.

    2006-05-01

    The crystal structure and polarization switching behavior of SrBi1.4La0.6Ta2O9 (SBLT) thin films have been studied by x-ray diffraction and piezoresponse force microscopy (PFM), respectively. Compared with SrBi2Ta2O9 (SBT), SBLT thin films show a reduced orthorhombic distortion. The polarization rotation of SBLT thin film, which is driven by negative and positive direct current (dc) biases, has been investigated by a combination of vertical and lateral PFM (VPFM and LPFM, respectively). After dc bias applications, the VPFM image is hardly changed, whereas the LPFM image experiences an obvious variation. It is believed that such difference is caused by 90° polarization switching. However, this kind of switching can be only realized by the exchange of a axis and b axis. By virtue of the reduced orthorhombic distortion, the a-b exchange in SBLT is easier than that in SBT. Unfortunately, stress is created due to the 90° polarization switching in SBLT thin films. The internal stress is found to increase with the repeated switching cycles, and so the polarization reorientation in SBLT is constrained. Thus, the fatigue resistance of SBLT thin films is not thought to be as good as that of SBT.

  12. Competition between coexisting phases in (La,Pr)CaMnO3 manganites

    NASA Astrophysics Data System (ADS)

    Masunaga, S. H.; Jardim, R. F.

    2007-10-01

    Polycrystalline La5/8-yPryCa3/8MnO3, 0⩽y⩽0.625, samples were synthesized by the solid-state reaction method and studied using x-ray powder diffraction, magnetic susceptibility [χ(T)], and magnetoresistivity [ρ(T,H)] measurements. Some features such as an appreciable thermal hysteresis observed in both ρ(T ) and χ(T ) curves indicated a competing scenario due to the coexistence of different phases. We have also found that there is a critical region in the phase diagram, for the Pr concentration ranging from ˜0.30 to 0.40, where the magnitude of the insulator to metal transition temperature (TMI), the Curie temperature (TC), the magnetoresistance, and the residual resistivity (ρ0) are characterized by abrupt changes with little increase in y. Our data also indicate that the physical properties of these manganites in this critical region are dominated by a strong competition between coexisting ferromagnetic metallic and charge-ordered insulating phases.

  13. Surface control of epitaxial manganite films via oxygen pressure

    DOE PAGES

    Tselev, Alexander; Vasudevan, Rama K.; Gianfrancesco, Anthony G.; ...

    2015-03-11

    The trend to reduce device dimensions demands increasing attention to atomic-scale details of structure of thin films as well as to pathways to control it. We found that this is of special importance in the systems with multiple competing interactions. We have used in situ scanning tunneling microscopy to image surfaces of La 5/8Ca 3/8MnO 3 films grown by pulsed laser deposition. The atomically resolved imaging was combined with in situ angle-resolved X-ray photoelectron spectroscopy. We find a strong effect of the background oxygen pressure during deposition on structural and chemical features of the film surface. Deposition at 50 mTorrmore » of O 2 leads to mixed-terminated film surfaces, with B-site (MnO 2) termination being structurally imperfect at the atomic scale. Moreover, a relatively small reduction of the oxygen pressure to 20 mTorr results in a dramatic change of the surface structure leading to a nearly perfectly ordered B-site terminated surface with only a small fraction of A-site (La,Ca)O termination. This is accompanied, however, by surface roughening at a mesoscopic length scale. The results suggest that oxygen has a strong link to the adatom mobility during growth. The effect of the oxygen pressure on dopant surface segregation is also pronounced: Ca surface segregation is decreased with oxygen pressure reduction.« less

  14. Improper origin of polar displacements at CaTiO3 and CaMnO3 twin walls

    NASA Astrophysics Data System (ADS)

    Barone, Paolo; Di Sante, Domenico; Picozzi, Silvia

    2014-04-01

    Recent interest in novel functionalities arising at domain walls of ferroic materials naturally calls for a microscopic understanding. To this end, first-principles calculations have been performed in order to provide solid evidence of polar distortions in the twin walls of nonpolar CaTiO3 and magnetic CaMnO3. We show that such polar displacements arise from rotation and/or tilting octahedral distortions—cooperatively acting at the twin wall in both considered systems—rather than from a proper secondary ferroelectric instability, as often believed. Our results are in excellent agreement with experimental observations of domain walls in CaTiO3. In addition, we show that magnetic properties at the twin wall in CaMnO3 are also modified, thus suggesting an unexplored route to achieve and detect multiferroic ordering in a single-phase material.

  15. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

    NASA Technical Reports Server (NTRS)

    Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

    2001-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  16. Substrate-dependent structural and CO sensing properties of LaCoO3 epitaxial films

    NASA Astrophysics Data System (ADS)

    Liu, Haifeng; Sun, Hongjuan; Xie, Ruishi; Zhang, Xingquan; Zheng, Kui; Peng, Tongjiang; Wu, Xiaoyu; Zhang, Yanping

    2018-06-01

    LaCoO3 thin films were grown on different (0 0 1) oriented LaAlO3, SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 by the polymer assisted deposition method, respectively. All the LaCoO3 thin films are in epitaxial growth on these substrates, with tetragonal distortion of CoO6 octahedrons. Due to different in-plane lattice mismatch, the LaCoO3 film on LaAlO3 has the largest tetragonal distortion of CoO6 octahedrons while the film grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 has the smallest tetragonal distortion. The relative contents of the surface absorbed oxygen species are found to increase for the LaCoO3 epitaxial films grown on (0 0 1) oriented (LaAlO3)0.3(Sr2AlTaO6)0.7, SrTiO3 and LaAlO3 substrates, sequentially. The film sensors exhibit good CO sensing properties at 150 °C, and the LaCoO3 film on LaAlO3 shows the highest response but the film on (LaAlO3)0.3(Sr2AlTaO6)0.7 shows the lowest. It reveals that the larger degree of Jahn-Teller-like tetragonal distortion of CoO6 octahedrons may greatly improve the surface absorbing and catalytic abilities, corresponding to more excellent CO sensing performance. The present study suggests that the formation of epitaxial films is an efficient methodology for controlling the octahedral distortion and thereby improving the gas sensing performance of perovskite transition metal oxides.

  17. Vertically porous nickel thin film supported Mn3O4 for enhanced energy storage performance.

    PubMed

    Li, Xiao-Jun; Song, Zhi-Wei; Zhao, Yong; Wang, Yue; Zhao, Xiu-Chen; Liang, Minghui; Chu, Wei-Guo; Jiang, Peng; Liu, Ying

    2016-12-01

    Three-dimensionally porous metal materials are often used as the current collectors and support for the active materials of supercapacitors. However, the applications of vertically porous metal materials in supercapacitors are rarely reported, and the effect of vertically porous metal materials on the energy storage performance of supported metal oxides is not explored. To this end, the Mn3O4-vertically porous nickel (VPN) electrodes are fabricated via a template-free method. The Mn3O4-VPN electrode shows much higher volumetric specific capacitances than that of flat nickel film supported Mn3O4 with the same loading under the same measurement conditions. The volumetric specific capacitance of the vertically porous nickel supported Mn3O4 electrode can reach 533Fcm(-3) at the scan rate of 2mVs(-1). The fabricated flexible all-solid microsupercapacitor based on the interdigital Mn3O4-VPN electrode has a volumetric specific capacitance of 110Fcm(-3) at the current density of 20μAcm(-2). The capacitance retention rate of this microsupercapacitor reaches 95% after 5000 cycles under the current density of 20μAcm(-2). The vertical pores in the nickel electrode not only fit the micro/nanofabrication process of the Mn3O4-VPN electrode, but also play an important role in enhancing the capacitive performances of supported Mn3O4 particles. Copyright © 2016 Elsevier Inc. All rights reserved.

  18. The magnetic Curie temperature and exchange coupling between cations in tetragonal spinel oxide Mn2.5M0.5O4 (M = Co, Ni, Mn, Cr, and Mg) films

    NASA Astrophysics Data System (ADS)

    Kuo, K.; Cheng, C. W.; Chern, G.

    2012-04-01

    Mn3O4 is a Jahn-Taller tetragonal ferrite that has a relatively low Curie temperature (Tc) of ˜43 K due to weak coupling between the canting spins. In this study, we fabricated a series of 100-nm-thick Mn2.5M0.5O4 (M = Co, Ni, Mn, Cr, and Mg) films via oxygen-plasma-assisted molecular beam epitaxy and measured the structural and magnetic properties of these films. These films show single phase quality, and the c-axis lattice parameter of pure Mn3O4 is 0.944 nm, with a c/a ratio ˜1.16, consistent with the bulk values. The replacement of Mn by M (M = Co, Ni, Cr, and Mg) changes the lattice parameters, and the c/a ratio varies between 1.16 and 1.06 depending upon the cation distribution of the films. The magnetic Curie temperatures of these films also vary in the range of 25-66 K in that Ni and Co enhance the Tc whereas Mg reduces the Tc (Cr shows no effect on the Tc). These changes to the Tc are related to both the element electronic state and the cation distributions in these compounds. As a non-collinear spin configuration can induce electrical polarization, the present study provides a systematic way to enhance the magnetic transition temperature in tetragonal spinel ferrites.

  19. Synthesis, structure and magnetic properties of nanostructured La1-xAxFe0.5Mn0.5O3 (A = Ca, Sr and Pb; x = 0 & 0.25) perovskites

    NASA Astrophysics Data System (ADS)

    Hossain, Aslam; Ghosh, Debamalya; Dutta, Uma; Walke, Pravin S.; Mordvinova, Natalia E.; Lebedev, Oleg I.; Sinha, Bhavesh; Pal, Kamalesh; Gayen, Arup; Kundu, Asish K.; Seikh, Md. Motin

    2017-12-01

    The effect of hole doping on magnetic properties of LaFe0.5Mn0.5O3 have been investigated. All the ceramics samples La1-xAxFe0.5Mn0.5O3 (A = Ca, Sr and Pb; x = 0 & 0.25) were synthesized at 500 °C by sol-gel method and the particles size were found to be in nanodimension. The samples were characterized by X-ray and electron diffraction, HRTEM and both dc and ac-magnetization measurements. The X-ray and electron diffraction patterns were indexed by cubic Pm-3m space group. The particle size of the LaFe0.5Mn0.5O3 is ∼100 nm, whereas the Pb-doped sample is ∼50 nm and for Ca or Sr doped samples the size is ∼10-30 nm. Both dc and ac-susceptibility measurements suggest that the effect of hole doping and A-site cationic radius in LaFe0.5Mn0.5O3 have no significant role on magnetic properties. However, the particle size plays an important role on magnetic property due to the development of surface ferromagnetic cluster at nanoscale. The competing interactions lead to magnetic phase separation where local ferromagnetic clusters coexist within the antiferromagentic matrix in all the samples.

  20. Electrical and optical properties of sol-gel derived La modified PbTiO 3 thin films

    NASA Astrophysics Data System (ADS)

    Chopra, Sonalee; Sharma, Seema; Goel, T. C.; Mendiratta, R. G.

    2004-09-01

    Lanthanum modified lead titanate (Pb 1- xLa xTi 1- x/4 O 3) PLT x ( x=0.08 i.e. PLT8) sol-gel derived thin films have been prepared on indium tin oxide (ITO) coated glass and quartz substrates using lead acetate trihydrate, lanthanum acetate hydrate and titanium isopropoxide as precursors along with 2-methoxyethanol as solvent and acetic acid as catalyst by spin coating method. The microstructure and surface morphology of the films annealed at 650 °C have been studied by X-ray diffraction technique and atomic force microscope (AFM). XRD has shown a single phase with tetragonal structure and AFM images have confirmed a smooth and crack-free surface with low surface roughness. The dependence of leakage current on applied voltage show ohmic behavior at low field region with a space charge conduction mechanism at high fields. The wavelength dispersion curve of thin films obtained from the transmission spectrum of thin films show that the films have high optical transparency in the visible region.

  1. Effect of Gallium Substitution on Lithium-Ion Conductivity and Phase Evolution in Sputtered Li7-3 xGa xLa3Zr2O12 Thin Films.

    PubMed

    Rawlence, M; Filippin, A N; Wäckerlin, A; Lin, T-Y; Cuervo-Reyes, E; Remhof, A; Battaglia, C; Rupp, J L M; Buecheler, S

    2018-04-25

    Replacing the liquid electrolyte in conventional lithium-ion batteries with thin-film solid-state lithium-ion conductors is a promising approach for increasing energy density, lifetime, and safety. In particular, Li 7 La 3 Zr 2 O 12 is appealing due to its high lithium-ion conductivity and wide electrochemical stability window. Further insights into thin-film processing of this material are required for its successful integration into solid-state batteries. In this work, we investigate the phase evolution of Li 7-3 x Ga x La 3 Zr 2 O 12 in thin films with various amounts of Li and Ga for stabilizing the cubic phase. Through this work, we gain valuable insights into the crystallization processes unique to thin films and are able to form dense Li 7-3 x Ga x La 3 Zr 2 O 12 layers stabilized in the cubic phase with high in-plane lithium-ion conductivities of up to 1.6 × 10 -5 S cm -1 at 30 °C. We also note the formation of cubic Li 7 La 3 Zr 2 O 12 at the relatively low temperature of 500 °C.

  2. Study of defects in an electroresistive Au/La2/3Sr1/3MnO3/SrTiO3(001) heterostructure by positron annihilation

    NASA Astrophysics Data System (ADS)

    Ferragut, R.; Dupaquier, A.; Brivio, S.; Bertacco, R.; Egger, W.

    2011-09-01

    Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 (Au/LSMO/STO) heterostructure displaying electroresistive behavior were studied using variable energy positron annihilation spectroscopy. Vacancy-like defects were found to be the dominant positron traps in the LSMO and STO thin perovskite oxides with a number density >1017 cm-3 and 2 × 1017 cm-3 in the STO substrate. High defect density was revealed by strong positron trapping at the Au/LSMO interface. Oxygen deficiency in LSMO would be the main source of these traps. Besides, a low density of sub-nano voids of ˜6 Å was found in the substrate and in the thin LSMO/STO films.

  3. Correlating melting and collapse of charge ordering with magnetic transitions in La{sub 0.5-x}Pr{sub x}Ca{sub 0.5}MnO{sub 3}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nadeem, M., E-mail: mnadeemsb@gmail.com; Iqbal, M. Javid; Farhan, M. Arshad

    2016-08-15

    Highlights: • Concept of normalized magnetization is introduced to explain relative magnetic transitions. • Coexistence of two magnetic modes is correlated with the magnetic transitions and MIT. • Field induced melting and collapse of charge ordered antiferromagnetic (CO-AFM) state into ferromagnetic (FM) state is conferred. - Abstract: The magnetic properties of polycrystalline La{sub 0.5-x}Pr{sub x}Ca{sub 0.5}MnO{sub 3} material are investigated at different temperatures. The existence of magnetically diverse phases associated with various relaxation modes and their modulation with temperature and doping is analyzed. La{sub 0.5}Ca{sub 0.5}MnO{sub 3} exhibited field induced melting and collapse of charge ordered antiferromagnetic (CO-AFM) phase intomore » ferromagnetic (FM) state. This phenomenon results in lowering of Neel’s temperature (T{sub N}) along with changes in the slope of magnetic moment with temperature. Using normalized M(T) curves, the variation and interplay of charge ordered temperature (T{sub CO}), Curie temperature (T{sub C}) and T{sub N} is conferred. The coexistence of two magnetic modes is explained as major ingredient for the magnetic transitions as well as metal to insulator transition (MIT); where melting and collapse of charge ordering is conversed as basic feature in these Praseodymium (Pr) doped La{sub 0.5}Ca{sub 0.5}MnO{sub 3} materials.« less

  4. MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

    NASA Astrophysics Data System (ADS)

    Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

    2018-06-01

    We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

  5. Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

    NASA Astrophysics Data System (ADS)

    Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

    2006-08-01

    Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

  6. Atomic moments in Mn 2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE PAGES

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; ...

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn 2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  7. Nanoporous structures on ZnO thin films

    NASA Astrophysics Data System (ADS)

    Gür, Emre; Kılıç, Bayram; Coşkun, C.; Tüzemen, S.; Bayrakçeken, Fatma

    2010-01-01

    Porous structures were formed on ZnO thin films which were grown by an electrochemical deposition (ECD) method. The growth processes were carried out in a solution of dimethylsulfoxide (DMSO) zinc perchlorate, Zn(ClO 4) 2, at 120 ∘C on indium tin oxide (ITO) substrates. Optical and structural characterizations of electrochemically grown ZnO thin films have shown that the films possess high (0002) c-axis orientation, high nucleation, high intensity and low FWHM of UV emission at the band edge region and a sharp UV absorption edge. Nanoporous structures were formed via self-assembled monolayers (SAMs) of hexanethiol (C 6SH) and dodecanethiol (C 12SH). Scanning electron microscope (SEM) measurements showed that while a nanoporous structure (pore radius 20 nm) is formed on the ZnO thin films by hexanathiol solution, a macroporous structure (pore radius 360 nm) is formed by dodecanethiol solution. No significant variation is observed in X-ray diffraction (XRD) measurements on the ZnO thin films after pore formation. However, photoluminescence (PL) measurements showed that green emission is observed as the dominant emission for the macroporous structures, while no variation is observed for the thin film nanoporous ZnO sample.

  8. Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

    NASA Astrophysics Data System (ADS)

    Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

    2017-12-01

    This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

  9. Electronic structure at transition metal phthalocyanine-transition metal oxide interfaces: Cobalt phthalocyanine on epitaxial MnO films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Glaser, Mathias; Peisert, Heiko, E-mail: heiko.peisert@uni-tuebingen.de; Adler, Hilmar

    2015-03-14

    The electronic structure of the interface between cobalt phthalocyanine (CoPc) and epitaxially grown manganese oxide (MnO) thin films is studied by means of photoemission (PES) and X-ray absorption spectroscopy (XAS). Our results reveal a flat-lying adsorption geometry of the molecules on the oxide surface which allows a maximal interaction between the π-system and the substrate. A charge transfer from MnO, in particular, to the central metal atom of CoPc is observed by both PES and XAS. The change of the shape of N-K XAS spectra at the interface points, however, to the involvement of the Pc macrocycle in the chargemore » transfer process. As a consequence of the charge transfer, energetic shifts of MnO related core levels were observed, which are discussed in terms of a Fermi level shift in the semiconducting MnO films due to interface charge redistribution.« less

  10. Research in LPE of Doped LiNbO3 and LiTaO3 Thin Films.

    DTIC Science & Technology

    1981-06-01

    garnet films grown on single crystal garnet substrates by the LPE technique for magnetic bubble applica- tions. The choice of substrate and film are...AD-Al07 686 ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS -EUTC F/G 2RESEARCH IN LPE OF DOPED LINBO3 AND LITA03 THIN FILMS .(U JUN Al R R NEUR...Research in LPE of Doped LiNbO3 and LiTa03 Final Report Thin Films 04/01/77 through 03/31/81 6. PERFORMING ORG. REPORT NUM9ER ERC41004.11FR 7. AUTNOR

  11. Onset of phase separation in the double perovskite oxide La2MnNiO6

    NASA Astrophysics Data System (ADS)

    Spurgeon, Steven R.; Sushko, Peter V.; Devaraj, Arun; Du, Yingge; Droubay, Timothy; Chambers, Scott A.

    2018-04-01

    Identification of kinetic and thermodynamic factors that control crystal nucleation and growth represents a central challenge in materials synthesis. Here we report that apparently defect-free growth of La2MnNiO6 (LMNO) thin films supported on SrTiO3 (STO) proceeds up to 1-5 nm, after which it is disrupted by precipitation of NiO phases. Local geometric phase analysis and ensemble-averaged x-ray reciprocal space mapping show no change in the film strain away from the interface, indicating that mechanisms other than strain relaxation induce the formation of the NiO phases. Ab initio simulations suggest that the electrostatic potential build-up associated with the polarity mismatch at the film-substrate interface promotes the formation of oxygen vacancies with increasing thickness. In turn, oxygen deficiency promotes the formation of Ni-rich regions, which points to the built-in potential as an additional factor that contributes to the NiO precipitation mechanisms. These results suggest that the precipitate-free region could be extended further by either incorporating dopants that suppress the built-in potential or by increasing the oxygen fugacity in order to suppress the formation of oxygen vacancies.

  12. Comment on papers ``Effect of Ag substitution on the transport property and magnetoresistance of LaMnO3'' [J. Magn. Magn. Mater. 248 (2002) 26] and ``Possible magnetic phase separation in Ru-doped La0.67Ca0.33O3'' [J. Magn. Magn. Mater. 257 (2003) 195

    NASA Astrophysics Data System (ADS)

    Rozenberg, E.

    2004-03-01

    In recent papers Ye et al. (J. Magn. Magn. Mater. 248 (2002) 26) and Lakshmi et al. (J. Magn. Magn. Mater. 257 (2003) 195) reported the characteristic features of electrical resistivity ( ρ) versus temperature ( T) dependences of polycrystalline-doped manganites La 1- xAg xMnO 3 and La 0.67Ca 0.33Mn 1- xRu xO 3. Infact, two peaks on ρ( T) curve coexist: broad one at some Tmax below the Curie points ( TC) of these compounds and a sharp peak near TC. Authors interpreted such coexistence as an evidence of electronic/magnetic phase separation in the above-noted systems below its TC. It is shown in this comment that such an interpretation is obviously invalid for La 1- xAg xMnO 3 system and is very questionable for La 0.67Ca 0.33Mn 1- xRu xO 3. The simplest and natural reason for the appearance of considered features on ρ( T) dependences of polycrystalline manganites is the well-known grain-boundary effects.

  13. Low-Frequency Dielectric Responses of Barium Strontium Titanate Thin Films with Conducting Perovskite LaNiO3 Electrode

    NASA Astrophysics Data System (ADS)

    Lee, Su-Jae; Moon, Seung-Eon; Ryu, Han-Cheol; Kwak, Min-Hwan; Kim, Young-Tae

    2002-07-01

    Highly (h00)-oriented (Ba,Sr)TiO3 [BST] thin films were deposited by pulsed laser depositi on on the perovskite LaNiO3 metallic oxide layer as a bottom electrode. The LaNiO3 films were deposited on SiO2/Si substrates by the rf-magnetron sputtering method. The crystal line phases of the BST film were characterized by X-ray θ-2θ, ω-rocking curve and Φ-scan diffraction measurements. The surface microstructure observed by scanning electron mi croscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxations in the measured frequency region. The origins of these low-frequency dielectric relaxations are attributed to ionized space charge carriers such as the oxygen vacancies and defects in the BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We also studied the capacitance-voltage characteristics of BST films.

  14. Phase control of Mn-based spinel films via pulsed laser deposition

    DOE PAGES

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.; ...

    2016-07-06

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn 2O 4 and fully charged cathode Mn 2O 4. The tetragonal MgMn 2O 4 (MMO) phase is obtained on MgAl 2O 4 substrates, whilemore » the cubic MMO phase is obtained on MgO substrates. Similarly, growth of the empty Mn 2O 4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn 2O 4, for x = 0, 1). As a result, this capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.« less

  15. Phase control of Mn-based spinel films via pulsed laser deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Feng, Zhenxing; Chen, Xiao; Fister, Timothy T.

    Phase transformations in battery cathode materials during electrochemical-insertion reactions lead to capacity fading and low cycle life. One solution is to keep the same phase of cathode materials during cation insertion-extraction processes. Here, we demonstrate a novel strategy to control the phase and composition of Mn-based spinel oxides for magnesium-ion battery applications through the growth of thin films on lattice-matched substrates using pulsed laser deposition. Materials at two extreme conditions are considered: fully discharged cathode MgMn 2O 4 and fully charged cathode Mn 2O 4. The tetragonal MgMn 2O 4 (MMO) phase is obtained on MgAl 2O 4 substrates, whilemore » the cubic MMO phase is obtained on MgO substrates. Similarly, growth of the empty Mn 2O 4 spinel in the cubic phase is obtained on an MgO substrate. These results demonstrate the ability to control separately the phase of spinel thin films (e.g., tetragonal vs. cubic MMO) at nominally fixed composition, and to maintain a fixed (cubic) phase while varying its composition (MgxMn 2O 4, for x = 0, 1). As a result, this capability provides a novel route to gain insights into the operation of battery electrodes for energy storage applications.« less

  16. Solid-State Thin-Film Supercapacitors with Ultrafast Charge/Discharge Based on N-Doped-Carbon-Tubes/Au-Nanoparticles-Doped-MnO2 Nanocomposites.

    PubMed

    Lv, Qiying; Wang, Shang; Sun, Hongyu; Luo, Jun; Xiao, Jian; Xiao, JunWu; Xiao, Fei; Wang, Shuai

    2016-01-13

    Although carbonaceous materials possess long cycle stability and high power density, their low-energy density greatly limits their applications. On the contrary, metal oxides are promising pseudocapacitive electrode materials for supercapacitors due to their high-energy density. Nevertheless, poor electrical conductivity of metal oxides constitutes a primary challenge that significantly limits their energy storage capacity. Here, an advanced integrated electrode for high-performance pseudocapacitors has been designed by growing N-doped-carbon-tubes/Au-nanoparticles-doped-MnO2 (NCTs/ANPDM) nanocomposite on carbon fabric. The excellent electrical conductivity and well-ordered tunnels of NCTs together with Au nanoparticles of the electrode cause low internal resistance, good ionic contact, and thus enhance redox reactions for high specific capacitance of pure MnO2 in aqueous electrolyte, even at high scan rates. A prototype solid-state thin-film symmetric supercapacitor (SSC) device based on NCTs/ANPDM exhibits large energy density (51 Wh/kg) and superior cycling performance (93% after 5000 cycles). In addition, the asymmetric supercapacitor (ASC) device assembled from NCTs/ANPDM and Fe2O3 nanorods demonstrates ultrafast charge/discharge (10 V/s), which is among the best reported for solid-state thin-film supercapacitors with both electrodes made of metal oxide electroactive materials. Moreover, its superior charge/discharge behavior is comparable to electrical double layer type supercapacitors. The ASC device also shows superior cycling performance (97% after 5000 cycles). The NCTs/ANPDM nanomaterial demonstrates great potential as a power source for energy storage devices.

  17. Ferrimagnetism and disorder of epitaxial Mn2-xCoxVAl Heusler compound thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Meinert, Markus; Schmalhorst, Jan-Michael; Reiss, Gunter

    The quaternary full Heusler compound Mn{sub 2-x}Co{sub x}VAl with x = 1 is predicted to be a half-metallic antiferromagnet. Thin films of the quaternary compounds with x = 0-2 were prepared by dc and RF magnetron co-sputtering on heated MgO (0 0 1) substrates. The magnetic structure was examined by x-ray magnetic circular dichroism and the chemical disorder was characterized by x-ray diffraction. Ferrimagnetic coupling of V to Mn was observed for Mn{sub 2}VAl (x = 0). For x = 0.5, we also found ferrimagnetic order with V and Co antiparallel to Mn. The observed reduced magnetic moments are interpretedmore » with the help of band structure calculations in the coherent potential approximation. Mn{sub 2}VAl is very sensitive to disorder involving Mn, because nearest-neighbour Mn atoms couple antiferromagnetically. Co{sub 2}VAl has B2 order and has reduced magnetization. In the cases with x {ge} 0.9 conventional ferromagnetism was observed, closely related to the atomic disorder in these compounds.« less

  18. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    NASA Astrophysics Data System (ADS)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  19. Internal residual stress studies and enhanced dielectric properties in La0.7Sr0.3CoO3 buffered (Ba,Sr)TiO3 thin films

    NASA Astrophysics Data System (ADS)

    Lu, Shengbo; Xu, Zhengkui

    2009-09-01

    Ba0.6Sr0.4TiO3 (BST) thin films were deposited on La0.7Sr0.3CoO3 (LSCO) buffered and unbuffered Pt (111)/Ti/SiO2/Si substrates by pulsed laser deposition. The former exhibits a (100) preferred orientation and the latter a random orientation, respectively. Grazing incident x-ray diffraction study revealed that the tensile residual stress observed in the latter is markedly reduced in the former. As a result, the dielectric property of the LSCO buffered BST thin film is greatly improved, which shows a larger dielectric constant and tunability, smaller loss tangent, and lower leakage current than those of the unbuffered BST thin film. The relaxation of the larger tensile residual stress is attributed to the larger grain size in the buffered BST thin film and to a closer match of thermal expansion coefficient between the BST and the LSCO buffer layer.

  20. The structural and magnetic investigation of ( x) BiFe0.95Co0.05O3: (1- x) La0.7Ca0.3MnO3 composites

    NASA Astrophysics Data System (ADS)

    Zhang, Hongguang; Fu, Dexiang; Wang, Yang; Xie, Liang; Li, Yongtao; Chen, Wei

    2017-12-01

    The structural and magnetic behaviors are studied in the composites ( x) BiFe0.95Co0.05O3: (1- x) La0.7Ca0.3MnO3. An influence on the lattice parameters and magnetic states of BiFe0.95Co0.05O3 (BFCO) to the La0.7Ca0.3MnO3 (LCMO) are investigated. Although the variation of the relative X-ray intensity of LCMO to BFCO with composition ( x) in XRD patterns and the randomly distributed small nanoparticle of LCMO ( 200 nm) mixed in the large nanoparticle of BFCO ( 900 nm) given by SEM images indicate an almost immiscibility of BFCO and LCMO in composites obtained by solid solution method, an obvious change of lattice parameters indicates their mutual influence on lattice structure. A detail magnetic investigation of the composites shows that the Griffiths phase is increased with increase of composition x due to the incorporation of ferromagnetism of BFCO to the paramagnetic phase of LCMO. An approximate magnetic phase diagram for the composites is established, which would be helpful for understanding the magnetic singularity of the composites with colossal magnetoresistance and multiferroics.

  1. Search for d0-Magnetism in Amorphous MB6 (M = Ca, Sr, Ba) Thin Films

    NASA Astrophysics Data System (ADS)

    Suter, Andreas; Ackland, Karl; Stilp, Evelyn; Prokscha, Thomas; Salman, Zaher; Coey, Michael

    In the past decade there have been various reports on insulating or semi-conducting compounds showing weak ferromagnetic-like properties, even though none of their constituent have partially occupied d or f shells. Among them are HfO2 [1], highly oriented pyrolytic graphite [2], CaB2C2 [3], CaB6 [4,5], and ZnO2 [6]. From the very beginning it has been speculated that lattice defects might play a significant role. These effects can potentially be amplified when these materials are grown in thin film form, due to strain and interface effects. With low-energy μSR (LE-μSR) we studied various amorphous thin films of alkaline earth hexaborides MB6 (M = Ca, Sr, Ba) grown on Al2O3. Furthermore, we studied the starting materials which were used for the pulsed laser deposition (PLD) targets for the films with bulk μSR to ensure the quality of these powders. Similar to the results in Ref. [5] we find an increased second moment of the static width (ZF/LF dynamic Kubo-Toyabe function) compared to the nuclear width which suggest a very weak magnetic contribution which must originate from the electronic system (defect polarization, grain boundary effects, etc.). Two complications arise from the fact that a strong quadrupolar level crossing resonance is found in the hexaborides at rather low field values, and muon diffusion sets in at rather low temperature. The thin film results demonstrate a strong suppression of the muon diffusion which makes it more suitable to search for weak magnetic signatures. Indeed we find essentially a temperature independent second moment equal to the low temperature value found in the starting powders. This indicates that the weak magnetic state is stabilized up to much higher temperatures.

  2. Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

    NASA Technical Reports Server (NTRS)

    Warner, Joseph D.; Bhasin, Kul B.; Miranda, Felix A.

    1991-01-01

    Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.

  3. Structure and properties of CaMnO3/SrMnO3/BaMnO3 superlattices from first principles

    NASA Astrophysics Data System (ADS)

    Li, Shen; Oh, Seongshik; Rabe, Karin

    2008-03-01

    Previous theoretical and experimental studies have shown that three-component, or ``tri-color'' superlattices can exhibit intrinsic electric polarization due to inversion-symmetry breaking in the layer sequence. In ferromagnetic inversion-symmetry-breaking superlattices, controlled symmetry lowering is similarly expected to lead to interesting new and tunable properties. Here, we present results of first-principles density-functional-theory calculations for short-period CaMnO3/SrMnO3/BaMnO3 superlattices, using VASP. The ground state structure, magnetic ordering, polarization and dielectric response will be presented. The role of epitaxial strain in the individual layers and the role of layer sequence will be explored. Connections to experimental studies and prospects for future work will be discussed.

  4. Influence of the K+ ions and the superstoichiometric manganese on structure defects, magneto-transport and dielectric properties of magnetoresistive La0.7Ca0.3-xKxMn1+xO3-δ ceramic

    NASA Astrophysics Data System (ADS)

    Liedienov, N. A.; Pashchenko, A. V.; Pashchenko, V. P.; Prokopenko, V. K.; Tatarchuk, D. D.; Revenko, Yu. F.; Turchenko, V. A.; Burchovetskii, V. V.; Sycheva, V. Ya.; Sil'cheva, A. G.; Didenko, Yu. V.; Levchenko, G. G.

    2017-09-01

    The structure, its defects, nanostructural clustering and functional properties of the La0.7Ca0.3-xKxMn1+xO3-δ ceramic with x = 0-0.3 have been investigated by x-ray diffraction, thermogravimetric, SEM, resistance, magnetic, magnetoresistance and dielectric spectroscopy methods. We establish that the lattice parameter of the cubic structure increases when the Ca2+ ions are substituted with ions of K+. We show that the real perovskite structure contains different valence states of manganese MnA2 +,MnB3 + and MnB4 + in A- and B-positions, as well as vacancy type point defects, in the form of anionic V(a) and cationic V(c) vacancies. The increase in the content of the superstoichiometric manganese is connected to the nanostructured clustering process. We find that K+ and superstoichiometric manganese cause the increase in relative permittivity ɛ' and dielectric loss tangent angle tg δ. The experimental phase diagram of the magnetic state has been constructed and allows determining the composition of the magnetoresistant La0.7Ca0.3-xKxMn1+xO3-δ ceramics with set magnetotransport properties. The optimal La0.7Ca0.3-xKxMn1+xO3-δ composition showing the highest magnetoresistance effect at room temperature has been determined by comparing the functional properties of lanthanum-calcium, lanthanum-strontium and lanthanum-calcium-potassium manganites.

  5. Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

    NASA Astrophysics Data System (ADS)

    Pontes, F. M.; Pontes, D. S. L.; Leite, E. R.; Longo, E.; Chiquito, A. J.; Pizani, P. S.; Varela, J. A.

    2003-12-01

    We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV.

  6. Evolution of magnetooptical and transport properties of La1- x Ag x MnO3 films depending on silver concentration

    NASA Astrophysics Data System (ADS)

    Sukhorukov, Yu. P.; Gan'shina, E. A.; Loshkareva, N. N.; Kaul, A. R.; Gorbenko, O. Yu.; Telegin, A. V.; Tugushev, S. N.; Mel'Nikov, O. V.; Vinogradov, A. N.

    2007-04-01

    Evolution of optical, magnetooptical, and transport properties of La1- x Ag x MnO3/SrTiO3 epitaxial films depending on the silver concentration ( x = 0.05, 0.10, 0.15, and 0.25) is studied. The highest values of the Curie temperature ( T C ≈ 317 K), magnetoresistance (˜16%), magnetotransmission (˜8%), and transverse Kerr effect (δ ˜ 20 × 10-3) are attained for a concentration x = 0.10 of Ag+ ions. Comparison of the temperature dependences of the transmission of IR radiation, resistivity, magnetotransmission, magnetoresistance, and Kerr effect indicates electronic and magnetic inhomogeneity of the films in spite of saturation of films with silver. This feature of the film state is explained using the concepts of epitaxial stresses and metastable point defects.

  7. Method of forming a dielectric thin film having low loss composition of Ba.sub.x Sr.sub.y Ca.sub.1-x-y TiO.sub.3 : Ba.sub.0.12-0.25 Sr.sub.0.35-0.47 Ca.sub.0.32-0.53 TiO.sub.3

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Takeuchi, Ichiro

    2000-01-01

    A dielectric thin-film material for microwave applications, including use as a capacitor, the thin-film comprising a composition of barium strontium calcium and titanium of perovskite type (Ba.sub.x Sr.sub.y Ca.sub.1-x-y)TiO.sub.3. Also provided is a method for making a dielectric thin film of that formula over a wide compositional range through a single deposition process.

  8. Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schleicher, B., E-mail: b.schleicher@ifw-dresden.de; Niemann, R.; Schultz, L.

    2015-08-07

    Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth andmore » martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.« less

  9. Cathode limited charge transport and performance of thin-film rechargeable lithium batteries

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bates, J.B.; Hart, F.X.; Lubben, D.

    1994-11-01

    Several types of thin-film rechargeable batteries based on lithium metal anodes and amorphous V{sub 2}O{sub 5} (aV{sub 2}O{sub 5}), LiMn{sub 2}O{sub 4}, and LiCoO{sub 2} cathodes have been investigated in this laboratory. In all cases, the current density of these cells is limited by lithium ion transport in the cathodes. This paper, discusses sources of this impedance in Li-aV{sub 2}O{sub 5} and Li-LiMn{sub 2}O{sub 4} thin-film cells and their effect on cell performance.

  10. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

    2017-10-01

    Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

  11. Anion Order and Spontaneous Polarization in LaTiO2N Oxynitride Thin Films

    NASA Astrophysics Data System (ADS)

    Vonrüti, Nathalie; Aschauer, Ulrich

    2018-01-01

    The perovskite oxynitride LaTiO2N is a promising material for photocatalytic water splitting under visible light. One of the obstacles towards higher efficiencies of this and similar materials stems from charge-carrier recombination, which could be suppressed by the surface charges resulting from the dipolar field in polar materials. In this study, we investigate the spontaneous polarization in epitaxially strained LaTiO2N thin films via density functional theory calculations. The effect of epitaxial strain on the anion order, resulting out-of-plane polarization, energy barriers for polarization reversal, and corresponding coercive fields are studied. We find that for compressive strains larger than 4% the thermodynamically stable anion order is polar along the out-of-plane direction and has a coercive field comparable to other switchable ferroelectrics. Our results show that strained LaTiO2N could indeed suppress carrier recombination and lead to enhanced photocatalytic activities.

  12. Thin-film rechargeable lithium batteries

    NASA Astrophysics Data System (ADS)

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1994-11-01

    Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxynitride electrolyte, Li metal anode, and Li(1-x)Mn2O4 as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100 C or by enhancing the lithium ion transport rate in the cathode material.

  13. Tailoring transport properties of phase-separated manganite films with ordered magnetic nanostructures

    DOE PAGES

    Vlaminck, V.; Yanez, W.; Hoffman, J.; ...

    2016-08-02

    Here, the magnetotransport properties of thin manganite films (La 0.7Ca 0.3MnO 3) coupled with arrays of permalloy (Py) nanodots deposited on the surface of the film are studied as a function of temperature, magnetic field, and the size of the dots. In the presence of the magnetic dots, a reduction of the electrical resistivity is observed, especially at the insulator-to-metal transition, as well as a shift of the transition peak towards higher temperatures. This indicates that, due to local interface exchange coupling, highly conductive ferromagnetic domains are nucleated in the manganite film underneath the Py nanodots. The use of amore » simplified resistor network model allows us to estimate the size of the metallic regions induced by exchange coupling. At low temperatures, these regions extend ~70 nm beyond the edge of the nanodots, a length scale comparable to the correlation length of the ferromagnetic clusters in the phase-separated state of La 0.7Ca 0.3MnO 3.« less

  14. Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

    NASA Astrophysics Data System (ADS)

    Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

    2018-05-01

    Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

  15. Radiation damage effects in far-ultraviolet filters, thin films, and substrates.

    PubMed

    Keffer, C E; Torr, M R; Zukic, M; Spann, J F; Torr, D G; Kim, J

    1994-09-01

    Advances in vacuum ultraviolet thin-film filter technology have been made through the use of filter designs with multilayers of materials such as Al(2)O(3), BaF(2), CaF(2), HfO(2), LaF(3), MgF(2), and SiO(2). Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 × 9 R(E) orbit will expose the instrument to approximately 250 krad of radiation. Because to our knowledge no previous studies have been made on the potential radiation damage of these materials in the thin-film format, we report on such an assessment here. Transmittances and reflectances of BaF(2), CaF(2), HfO(2), MgF(2), and SiO(2) thin films on MgF(2) substrates, Al(2)O(3) thin films on fused-silica substrates, uncoated fused silica and MgF(2), and four multilayer filters made from these materials were measured from 120 to 180 nm beforeand after irradiation by 250 krad from a (60)Co gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 to 300 nm indicates 2-5% radiation-induced absorption near 260 nm in some of the samples with MgF(2) substrates. From these measurements we conclude that far-ultraviolet filters made from the materials tested should experience less than 5% change from exposure to up to 250 krad of high-energy radiation in space applications.

  16. Multifield Control of Domains in a Room-Temperature Multiferroic 0.85BiTi0.1Fe0.8Mg0.1O3-0.15CaTiO3 Thin Film.

    PubMed

    Jia, Tingting; Fan, Ziran; Yao, Junxiang; Liu, Cong; Li, Yuhao; Yu, Junxi; Fu, Bi; Zhao, Hongyang; Osada, Minoru; Esfahani, Ehsan Nasr; Yang, Yaodong; Wang, Yuanxu; Li, Jiang-Yu; Kimura, Hideo; Cheng, Zhenxiang

    2018-06-20

    Single-phase materials that combine electric polarization and magnetization are promising for applications in multifunctional sensors, information storage, spintronic devices, etc. Following the idea of a percolating network of magnetic ions (e.g., Fe) with strong superexchange interactions within a structural scaffold with a polar lattice, a solid solution thin film with perovskite structure at a morphotropic phase boundary with a high level of Fe atoms on the B site of perovskite structure is deposited to combine both ferroelectric and ferromagnetic ordering at room temperature with magnetoelectric coupling. In this work, a 0.85BiTi 0.1 Fe 0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film has been deposited by pulsed laser deposition (PLD). Both the ferroelectricity and the magnetism were characterized at room temperature. Large polarization and a large piezoelectric effective coefficient d 33 were obtained. Multifield coupling of the thin film has been characterized by scanning force microscopy. Ferroelectric domains and magnetic domains could be switched by magnetic field ( H), electric field ( E), mechanical force ( F), and, indicating that complex cross-coupling exists among the electric polarization, magnetic ordering and elastic deformation in 0.85BiTi 0.1 F e0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film at room temperature. This work also shows the possibility of writing information with electric field, magnetic field, and mechanical force and then reading data by magnetic field. We expect that this work will benefit information applications.

  17. A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

    NASA Technical Reports Server (NTRS)

    Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

    2004-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  18. Highly oriented Bi-based thin films with zero resistance at 106 K

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kula, W.; Sobolewski, R.; Gorecka, J.

    1991-03-01

    This paper reports on fabrication and characterization of nearly single-phase superconducting Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x} thin films. The films were dc magnetron sputtered from heavily Pb-doped (Pb/Bi molar ratios up to 1.25), sintered targets on unheated MgO, SrTiO{sub 3}, CaNdAlO{sub 4}, and SrLaAlO{sub 4} single crystals. For the films grown on the (100) oriented MgO substrate, less than 1 hour of annealing in air at 870{degrees} C was sufficient to obtain more than 90% of the 110-K-phase material, with highly c-axis oriented crystalline structure and zero resistivity at 106 K. The films fabricated on the other substrates alsomore » exhibited a narrow superconducting transition and were fully superconducting above 100 K, but they consisted of a mixed-phase material with a large percentage of the 80 K phase.« less

  19. Na-doped La0.7Ca0.3MnO3 compounds exhibiting a large magnetocaloric effect near room temperature

    NASA Astrophysics Data System (ADS)

    Chi Linh, Dinh; Thi Ha, Nguyen; Huu Duc, Nguyen; Giang Nam, Le Huu; Bau, Le Viet; Manh An, Nguyen; Yu, Seong-Cho; Dang Thanh, Tran

    2018-03-01

    In this work, we have investigated the magnetic properties and the magnetocaloric effect of La0.7-xNaxCa0.3MnO3 compounds, which were prepared by a conventional solid-state reaction technique. The Rietveld refinement results suggested that the samples are single phase belonging to an orthorhombic structure (space group Pnma). Analyzing temperature dependence of magnetization M(T) revealed that the Curie temperature (TC) increases with increasing Na content (x). Their TC value is found to be 260-298 K for x=0.0-0.1, respectively. Base on M(T) data measured at different applied magnetic fields (H), temperature dependence of magnetic entropy change ΔSm(T) data for all the samples was calculated by using a phenomenological model. In the vicinity of TC, -ΔSm(T) curve reaches a maximum value (denoted as |ΔSmax|), which gradually increases with increasing H. Under 12 kOe, the value of |ΔSmax| is in a range of 1.47-5.19 J/kg K corresponding to the relative cooling power RCP=57.12-75.88 J/kg. Applied the universal master curve method for the magnetic entropy change, we concluded that Na-doped in La0.7-xNaxCa0.3MnO3 compounds leads to modification the nature of the magnetic phase transition from the first- to the second-order.

  20. Magnetic interactions in BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices

    NASA Astrophysics Data System (ADS)

    Xu, Qingyu; Sheng, Yan; Khalid, M.; Cao, Yanqiang; Wang, Yutian; Qiu, Xiangbiao; Zhang, Wen; He, Maocheng; Wang, Shuangbao; Zhou, Shengqiang; Li, Qi; Wu, Di; Zhai, Ya; Liu, Wenqing; Wang, Peng; Xu, Y. B.; Du, Jun

    2015-03-01

    The clear understanding of exchange interactions between magnetic ions in substituted BiFeO3 is the prerequisite for the comprehensive studies on magnetic properties. BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices have been fabricated by pulsed laser deposition on (001) SrTiO3 substrates. Using piezoresponse force microscopy (PFM), the ferroelectricity at room temperature has been inferred from the observation of PFM hysteresis loops and electrical writing of ferroelectric domains for both samples. Spin glass behavior has been observed in both samples by temperature dependent magnetization curves and decay of thermo-remnant magnetization with time. The magnetic ordering has been studied by X-ray magnetic circular dichroism measurements, and Fe-O-Mn interaction has been confirmed to be antiferromagnetic (AF). The observed spin glass in BiFe0.5Mn0.5O3 films has been attributed to cluster spin glass due to Mn-rich ferromagnetic (FM) clusters in AF matrix, while spin glass in BiFeO3/BiMnO3 superlattices is due to competition between AF Fe-O-Fe, AF Fe-O-Mn and FM Mn-O-Mn interactions in the well ordered square lattice with two Fe ions in BiFeO3 layer and two Mn ions in BiMnO3 layer at interfaces.

  1. Transport Properties and Magnetoresistance of La0.8Ca0.13Ag0.07MnO3 Perovskite Manganite Synthesized by Sol-Gel Method

    NASA Astrophysics Data System (ADS)

    Kurniawan, B.; Ruli, F.; Imaduddin, A.; Kamila, R.

    2018-05-01

    In this paper, we investigate the transport properties and magnetoresistance effect of La0.8Ca0.13Ag0.07MnO3 perovskite manganite synthesized by sol-gel method. The XRD pattern of the sample shows a rhombohedral perovskite structure with space group R3¯c. The EDX analysis confirms that the sample contains all expected chemical elements without any additional impurity. The temperature dependence of electrical resistivity was measured using a cryogenic magnetometer. The results show a metal-insulator transition temperature (TM-I ) at 280 K. The resistivity of the sample increases with an increase of temperature below TM-I . Theoretical analyses of the temperature dependence of resistivity suggest that the resistivity due to electron-electron scattering is predominant below TI-M. The resistivity of the sample decreases when applied magnetic field 1 T at a temperature range of 10 K to 300 K. The magnetoresistance of La0.8Ca0.13Ag0.07MnO3 emanates from spin-polarized tunneling process at the grain boundary.

  2. Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3 thin films via field-assisted oxygen vacancy modulation

    NASA Astrophysics Data System (ADS)

    Wong, Hon Fai; Ng, Sheung Mei; Cheng, Wang Fai; Liu, Yukuai; Chen, Xinxin; von Nordheim, Danny; Mak, Chee Leung; Dai, Jiyan; Ploss, Bernd; Leung, Chi Wah

    2017-12-01

    We investigated the tunability of the transport and magnetic properties in 7.5 nm La0.7Sr0.3MnO3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TC of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TC by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

  3. Low-cost flexible supercapacitors with high-energy density based on nanostructured MnO2 and Fe2O3 thin films directly fabricated onto stainless steel.

    PubMed

    Gund, Girish S; Dubal, Deepak P; Chodankar, Nilesh R; Cho, Jun Y; Gomez-Romero, Pedro; Park, Chan; Lokhande, Chandrakant D

    2015-07-24

    The facile and economical electrochemical and successive ionic layer adsorption and reaction (SILAR) methods have been employed in order to prepare manganese oxide (MnO2) and iron oxide (Fe2O3) thin films, respectively with the fine optimized nanostructures on highly flexible stainless steel sheet. The symmetric and asymmetric flexible-solid-state supercapacitors (FSS-SCs) of nanostructured (nanosheets for MnO2 and nanoparticles for Fe2O3) electrodes with Na2SO4/Carboxymethyl cellulose (CMC) gel as a separator and electrolyte were assembled. MnO2 as positive and negative electrodes were used to fabricate symmetric SC, while the asymmetric SC was assembled by employing MnO2 as positive and Fe2O3 as negative electrode. Furthermore, the electrochemical features of symmetric and asymmetric SCs are systematically investigated. The results verify that the fabricated symmetric and asymmetric FSS-SCs present excellent reversibility (within the voltage window of 0-1 V and 0-2 V, respectively) and good cycling stability (83 and 91%, respectively for 3000 of CV cycles). Additionally, the asymmetric SC shows maximum specific capacitance of 92 Fg(-1), about 2-fold of higher energy density (41.8 Wh kg(-1)) than symmetric SC and excellent mechanical flexibility. Furthermore, the "real-life" demonstration of fabricated SCs to the panel of SUK confirms that asymmetric SC has 2-fold higher energy density compare to symmetric SC.

  4. Low-cost flexible supercapacitors with high-energy density based on nanostructured MnO2 and Fe2O3 thin films directly fabricated onto stainless steel

    PubMed Central

    Gund, Girish S.; Dubal, Deepak P.; Chodankar, Nilesh R.; Cho, Jun Y.; Gomez-Romero, Pedro; Park, Chan; Lokhande, Chandrakant D.

    2015-01-01

    The facile and economical electrochemical and successive ionic layer adsorption and reaction (SILAR) methods have been employed in order to prepare manganese oxide (MnO2) and iron oxide (Fe2O3) thin films, respectively with the fine optimized nanostructures on highly flexible stainless steel sheet. The symmetric and asymmetric flexible-solid-state supercapacitors (FSS-SCs) of nanostructured (nanosheets for MnO2 and nanoparticles for Fe2O3) electrodes with Na2SO4/Carboxymethyl cellulose (CMC) gel as a separator and electrolyte were assembled. MnO2 as positive and negative electrodes were used to fabricate symmetric SC, while the asymmetric SC was assembled by employing MnO2 as positive and Fe2O3 as negative electrode. Furthermore, the electrochemical features of symmetric and asymmetric SCs are systematically investigated. The results verify that the fabricated symmetric and asymmetric FSS-SCs present excellent reversibility (within the voltage window of 0–1 V and 0–2 V, respectively) and good cycling stability (83 and 91%, respectively for 3000 of CV cycles). Additionally, the asymmetric SC shows maximum specific capacitance of 92 Fg−1, about 2-fold of higher energy density (41.8 Wh kg−1) than symmetric SC and excellent mechanical flexibility. Furthermore, the “real-life” demonstration of fabricated SCs to the panel of SUK confirms that asymmetric SC has 2-fold higher energy density compare to symmetric SC. PMID:26208144

  5. Low-cost flexible supercapacitors with high-energy density based on nanostructured MnO2 and Fe2O3 thin films directly fabricated onto stainless steel

    NASA Astrophysics Data System (ADS)

    Gund, Girish S.; Dubal, Deepak P.; Chodankar, Nilesh R.; Cho, Jun Y.; Gomez-Romero, Pedro; Park, Chan; Lokhande, Chandrakant D.

    2015-07-01

    The facile and economical electrochemical and successive ionic layer adsorption and reaction (SILAR) methods have been employed in order to prepare manganese oxide (MnO2) and iron oxide (Fe2O3) thin films, respectively with the fine optimized nanostructures on highly flexible stainless steel sheet. The symmetric and asymmetric flexible-solid-state supercapacitors (FSS-SCs) of nanostructured (nanosheets for MnO2 and nanoparticles for Fe2O3) electrodes with Na2SO4/Carboxymethyl cellulose (CMC) gel as a separator and electrolyte were assembled. MnO2 as positive and negative electrodes were used to fabricate symmetric SC, while the asymmetric SC was assembled by employing MnO2 as positive and Fe2O3 as negative electrode. Furthermore, the electrochemical features of symmetric and asymmetric SCs are systematically investigated. The results verify that the fabricated symmetric and asymmetric FSS-SCs present excellent reversibility (within the voltage window of 0-1 V and 0-2 V, respectively) and good cycling stability (83 and 91%, respectively for 3000 of CV cycles). Additionally, the asymmetric SC shows maximum specific capacitance of 92 Fg-1, about 2-fold of higher energy density (41.8 Wh kg-1) than symmetric SC and excellent mechanical flexibility. Furthermore, the “real-life” demonstration of fabricated SCs to the panel of SUK confirms that asymmetric SC has 2-fold higher energy density compare to symmetric SC.

  6. RF sputter deposition of SrS:Eu and ZnS:Mn thin film electroluminescent phosphors

    NASA Astrophysics Data System (ADS)

    Droes, Steven Roy

    1998-09-01

    The radio-frequency (rf) sputter deposition of thin film electroluminescent (TFEL) materials was studied. Thin films of strontium sulfide doped with europium (SrS:Eu) and zinc sulfide doped with manganese (ZnS:Mn) were RF sputter deposited at different conditions. Photoluminescent and electroluminescent behaviors of these films were examined. Photoluminescent active, crystalline films of SrS:Eu were deposited at temperatures from 300o C to 650o C. The best temperature was 400o C, where a PL efficiency of 35% was achieved. Films were deposited at two power levels (90 and 120 watts) and five H2S concentrations (0.6%, 1.3%, 2.4%, 4.0% and 5.3%). The H2S concentration affected the crystallinity of the films and the PL performance. Lower H2S concentrations resulted in films with smaller crystallite sizes and poorer PL performance. Increased H2S concentrations increased the PL intensity and the overall spectra resembled that of an efficient SrS:Eu powder. Although there was a correlation between crystallinity and PL performance other factors such as europium concentration, distribution, and local environment also influence PL performance. Analytical results suggested that, although a film may be crystalline and have the correct europium concentration, unless the europium is in the correct localized environment, optimum PL response will not be achieved. Increased H2S concentrations produced films with europium located in optimum locations. Contrary to vacuum or chemical vapor deposited films, the sputter deposited films showed no trailing edge emission during electroluminescence. A suggested reason for this lack of a trailing edge emission in these films is that the sputter deposition process produces phosphor- insulator interfaces without shallow trap states. A statistical design of experiments approach was implemented for the sputter deposition of ZnS:Mn. The effects of four factors (substrate temperature, chamber pressure, power to the target, and H2S concentration) on

  7. Independent Control of the Magnetization in Ferromagnetic La2/3Sr1/3MnO3/SrTiO3/LaCoO3 Heterostructures Achieved by Epitaxial Lattice Mismatch.

    PubMed

    Rivas-Murias, Beatriz; Lucas, Irene; Jiménez-Cavero, Pilar; Magén, César; Morellón, Luis; Rivadulla, Francisco

    2016-03-09

    We report the effect of interface symmetry-mismatch on the magnetic properties of LaCoO3 (LCO) thin films. Growing epitaxial LCO under tensile strain on top of cubic SrTiO3 (STO) produces a contraction along the c axis and a characteristic ferromagnetic response. However, we report here that ferromagnetism in LCO is completely suppressed when grown on top of a buffer layer of rhombohedral La2/3Sr1/3MnO3 (LSMO), in spite of identical in-plane and out-of-plane lattice deformation. This confirms that it is the lattice symmetry mismatch and not just the total strain, which determines the magnetism of LCO. On the basis of this control over the magnetic properties of LCO, we designed a multilayered structure to achieve independent rotation of the magnetization in ferromagnetic insulating LCO and half-metallic ferromagnet LSMO. This is an important step forward for the design of spin-filtering tunnel barriers based on LCO.

  8. Coral Cd/Ca and Mn/Ca records of El Niño variability in the Gulf of California

    NASA Astrophysics Data System (ADS)

    Carriquiry, J. D.; Villaescusa, J. A.

    2010-02-01

    We analyzed the trace element ratios Cd/Ca and Mn/Ca in three coral colonies (Pavona gigantea, Pavona clivosa and Porites panamensis) from Cabo Pulmo reef, Southern Gulf of California, Mexico, to assess the oceanographic changes caused by El Niño - Southern Oscillation (ENSO) events in the Eastern Tropical North Pacific (ETNP). The interannual variations in the coral Cd/Ca and Mn/Ca ratios show clear evidence that incorporation of Cd and Mn in the coral skeleton are influenced by ENSO conditions, but the response for each metal is controlled by different process. The Mn/Ca ratios were significantly higher during ENSO years (p<0.05) relative to non-ENSO years for the three species of coral. In contrast, the Cd/Ca was systematically lower during ENSO years, but it was significant (p<0.05) only in P. gigantea. The decrease in the incorporation of Cd, and the marked increase in Mn during the mature phase of El Niño indicate strongly reduced vertical mixing in the Gulf of California. The oceanic warming during El Niño events produces a relaxation of upwelling and a stabilization of the thermocline which acts as a physical barrier limiting the transport of Cd from deeper waters into the surface layer. In turn, this oceanic condition can increase the residence time of particulate-Mn in surface waters, which in turn increases the photo-reduction of particulate-Mn and the release of the available Mn into the dissolved phase. These results provide validation for using Mn/Ca and Cd/Ca in biogenic carbonates as tracers of changes in ocean stratification and trade wind weakening and/or collapse in the ETNP during ENSO episodes.

  9. Method of forming superconducting Tl-Ba-Ca-Cu-O films

    DOEpatents

    Wessels, Bruce W.; Marks, Tobin J.; Richeson, Darrin S.; Tonge, Lauren M.; Zhang, Jiming

    1993-01-01

    A method of forming a superconducting Tl-Ba-Ca-Cu-O film is disclosed, which comprises depositing a Ba-Ca-Cu-O film on a substrate by MOCVD, annealing the deposited film and heat-treating the annealed film in a closed circular vessel with TlBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x and cooling to form said superconducting film of TlO.sub.m Ba.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.2n+2, wherein m=1,2 and n=1,2,3.

  10. Structural Variation of LaMnO3+δ by Oxygen Nonstoichiometry

    NASA Astrophysics Data System (ADS)

    Niwa, Eiki; Maeda, Hiroki; Hashimoto, Takuya; Mizusaki, Junichiro

    2013-07-01

    The relationship between oxygen content and crystal structure of LaMnO3+δ, which is mother phase of cathode material for solid oxide fuel cells, has been investigated by X-ray diffraction, thermogravimetry and iodometric titration. It was confirmed that LaMnO3+δ with different oxygen content can be prepared by controlling sintering temperature in static air. Crystal system of LaMnO3.17±0.02 and LaMnO3.13±0.01 at room temperature was rhombohedral with space group of Rbar {3}c, whereas crystal structure of LaMnO3.08±0.01 was orthorhombic whose space group was proposed to be Pmna (No. 53). With increase of oxygen content in LaMnO3+δ, molar volume decreased and higher crystal symmetry was obtained.

  11. Onset of phase separation in the double perovskite oxide La 2 MnNiO 6

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Spurgeon, Steven R.; Sushko, Peter V.; Devaraj, Arun

    2018-04-01

    Identification of kinetic and thermodynamic factors that control crystal nucleation and growth represents a central challenge in materials synthesis. Here we report that apparently defect-free growth of La2MnNiO6 (LMNO) thin films supported on SrTiO3 (STO) proceeds up to 1–5 nm, after which it is disrupted by precipitation of NiO phases. Local geometric phase analysis and ensemble-averaged x-ray reciprocal space mapping show no change in the film strain away from the interface, indicating that mechanisms other than strain relaxation induce the formation of the NiO phases. Ab initio simulations suggest that the electrostatic potential build-up associated with the polarity mismatch atmore » the film-substrate interface promotes the formation of oxygen vacancies with increasing thickness. In turn, oxygen deficiency promotes the formation of Ni-rich regions, which points to the built-in potential as an additional factor that contributes to the NiO precipitation mechanisms. These results suggest that the precipitate-free region could be extended further by either incorporating dopants that suppress the built-in potential or by increasing the oxygen fugacity in order to suppress the formation of oxygen vacancies.« less

  12. Magnetic nonuniformity and thermal hysteresis of magnetism in a manganite thin film.

    PubMed

    Singh, Surendra; Fitzsimmons, M R; Lookman, T; Thompson, J D; Jeen, H; Biswas, A; Roldan, M A; Varela, M

    2012-02-17

    We measured the chemical and magnetic depth profiles of a single crystalline (La(1-x)Pr(x))(1-y)Ca(y)MnO(3-δ) (x=0.52±0.05, y=0.23±0.04, δ=0.14±0.10) film grown on a NdGaO(3) substrate using x-ray reflectometry, electron microscopy, electron energy-loss spectroscopy, and polarized neutron reflectometry. Our data indicate that the film exhibits coexistence of different magnetic phases as a function of depth. The magnetic depth profile is correlated with a variation of chemical composition with depth. The thermal hysteresis of ferromagnetic order in the film suggests a first-order ferromagnetic transition at low temperatures.

  13. Nanostructure and strain effects in active thin films for novel electronic device applications

    NASA Astrophysics Data System (ADS)

    Yuan, Zheng

    2007-12-01

    There are many potential applications of ferroelectric thin films that take advantage of their unique dielectric and piezoelectric properties, such as tunable microwave devices and thin-film active sensors for structural health monitoring (SHM). However, many technical issues still restrict practical applications of ferroelectric thin films, including high insertion loss, limited figure of merit, soft mode effect, large temperature coefficients, and others. The main theme of this thesis is the advanced technique developments, and the new ferroelectric thin films syntheses and investigations for novel device applications. A novel method of additional doping has been adopted to (Ba,Sr)TiO 3 (BSTO) thin films on MgO. By introducing 2% Mn into the stoichiometric BSTO, Mn:BSTO thin films have shown a greatly enhanced dielectric tunability and a reduced insertion loss at high frequencies (10-30 GHz). A new record of a large tunability of 80% with a high dielectric constant of 3800 and an extra low dielectric loss of 0.001 at 1 MHz at room-temperature was achieved. Meanwhile, the new highly epitaxial ferroelectric (Pb,Sr)TiO3 (PSTO) thin films have been synthesized on (001) MgO substrates. PSTO films demonstrated excellent high frequency dielectric properties with high dielectric constants above 1420 and large dielectric tunabilities above 34% at room-temperature up to 20 GHz. In addition, a smaller temperature coefficient from 80 K to 300 K was observed in PSTO films compared to BSTO films. These results indicate that the Mn:BSTO and PSTO films are both good candidates for developing room-temperature tunable microwave devices. Furthermore, crystalline ferroelectric BaTiO3 (BTO) thin films have been deposited directly on metal substrate Ni through a unique in-situ substrate pre-oxidation treatment. The highly oriented nanopillar structural BTO films were grown on the buffered layers created by the pre-oxidation treatment. No interdiffusion or reaction was observed at the

  14. High-T sub c thin films on low microwave loss alkaline-rare-earth-aluminate crystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sobolewski, R.; Gierlowski, P.; Kula, W.

    1991-03-01

    This paper reports on the alkaline-rare-earth aluminates (K{sub 2}NiF{sub 4}-type perovskites) which are an excellent choice as the substrate material for the growth of high-T{sub c} thin films suitable for microwave and far-infrared applications. The CaNdAlO{sub 4}, and SrLaAlO{sub 4} single crystals have been grown by Czochralski pulling and fabricated into the form of (001) oriented wafers. The Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O films deposited on these substrates by a single-target magnetron sputtering exhibited very good superconducting and structural properties.

  15. Comment on “A case study on the scaling of 1/f noise: La{sub 2∕3}Sr{sub 1∕3}MnO{sub 3} thin films” [J. Appl. Phys. 113, 094901 (2013)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Barone, C., E-mail: cbarone@unisa.it; Pagano, S., E-mail: spagano@unisa.it; Méchin, L.

    2014-03-21

    The problem of non-standard scaling of the 1/f noise in thin manganite films was revisited in the above paper, suggesting the quantum theory of fundamental flicker noise for the interpretation of the unusual dependence of the normalized Hooge parameter on the sample volume. Experimental evidence has been reported, showing that in these materials such volume dependence is, instead, an artifact of extrinsic noise sources, e.g., contact noise. Moreover, the proposed theoretical model implies a linear temperature dependence of the Hooge parameter, which is against the experimental data reported here. Based on these arguments, it is possible to conclude that themore » quantum theory of fundamental flicker noise cannot be applied to the case of La{sub 2∕3}Sr{sub 1∕3}MnO{sub 3} thin films.« less

  16. Fabrication and electrochemical properties of hemisphere structured 3D Li(Li0.2Mn0.54Co0.13Ni0.13)O2 cathode thin film for all-solid-state lithium battery.

    PubMed

    Yim, H; Kong, W Y; Yoon, S J; Kim, Y C; Choi, J W

    2013-05-01

    The Li[Li0.2Mn0.54Ni0.13Co0.13]O2 cathode thin films were deposited on planar, hemisphere, linked hemisphere, and isolated hemisphere structured Pt current collector thin films to investigate the effect of 3-dimensional (3-D) structure for the electrochemical properties of active cathode thin films. The films of linked hemisphere structure shows the highest initial discharge capacity of 140 microA h/cm2-microm which is better than those of planar (62 microA h/cm2-microm), hemisphere (94.6 microA h/cm2-microm), and isolated hemisphere (135 microA h/cm2-microm) films due to increase of surface area for cathode thin films. Linked hemisphere shows the biggest capacity and the best retention rate because 6 nanobridges of each hemisphere bring strong connection.

  17. Doped SnO₂ transparent conductive multilayer thin films explored by continuous composition spread.

    PubMed

    Lee, Jin Ju; Ha, Jong-Yoon; Choi, Won-Kook; Cho, Yong Soo; Choi, Ji-Won

    2015-04-13

    Mn-doped SnO₂ thin films were fabricated by a continuous composition spread (CCS) method on a glass substrate at room temperature to find optimized compositions. The fabricated materials were found to have a lower resistivity than pure SnO₂ thin films because of oxygen vacancies generated by Mn doping. As Mn content was increased, resistivity was found to decrease for limited doping concentrations. The minimum thin film resistivity was 0.29 Ω-cm for a composition of 2.59 wt % Mn-doped SnO₂. The Sn-O vibrational stretching frequency in FT-IR showed a blue shift, consistent with oxygen deficiency. Mn-doped SnO₂/Ag/Mn-doped SnO₂ multilayer structures were fabricated using this optimized composition deposited by an on-axis radio frequency (RF) sputter. The multilayer transparent conducting oxide film had a resistivity of 7.35 × 10⁻⁵ Ω-cm and an average transmittance above 86% in the 550 nm wavelength region.

  18. Charge transport and magnetization profile at the interface between the correlated metal CaRuO3 and the antiferromagnetic insulator CaMnO3

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Chakhalian, J.; Boris, A. V.; Tonnerre, J.-M.; Kavich, J. J.; Yordanov, P.; Grenier, S.; Zschack, P.; Karapetrova, E.; Popovich, P.; Lee, H. N.; Keimer, B.

    2010-03-01

    A combination of spectroscopic probes was used to develop a detailed experimental description of the transport and magnetic properties of superlattices composed of the paramagnetic metal CaRuO3 and the antiferromagnetic insulator CaMnO3 . The charge-carrier density and Ru valence state in the superlattices are not significantly different from those of bulk CaRuO3 . The small charge transfer across the interface implied by these observations confirms predictions derived from density-functional calculations. However, a ferromagnetic polarization due to canted Mn spins penetrates 3-4 unit cells into CaMnO3 , far exceeding the corresponding predictions. The discrepancy may indicate the formation of magnetic polarons at the interface.

  19. Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Abazari, M.; Safari, A.

    2009-05-01

    We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

  20. Strain effect on the magnetic and transport properties of LaCoO3 thin films

    NASA Astrophysics Data System (ADS)

    Li, Y.; Peng, S. J.; Wang, D. J.; Wu, K. M.; Wang, S. H.

    2018-05-01

    LaCoO3 (LCO) has attracted much attention due to the unique magnetic transition and spin transition of Co3+ ions. Epitaxial LCO film exhibits an unexpected ferromagnetism, in contrast to the non-magnetism of bulk LCO. An in-depth study on the property of strained LCO film is of great importance. We have fabricated 30 nm LCO films on various substrates and studied the magnetic and transport properties of films in different strain states (compressed strain for LCO/LaAlO3, tensile strain for LCO/(LaAlO3)0.3(Sr2TaAlO6)0.35, SrTiO3). The in-plane tensiled LCO films exhibit ferromagnetic ground state at 5K and magnetic transition with TC around 85K, while compressed LCO/LaAlO3 film has a negligibly small moment signal. Our results reveal that in-plane tensile strain and tetragonal distortion are much more favorable for stabilizing the FM order in LCO films.

  1. Magnetic and exchange bias properties of YCo thin films and IrMn/YCo bilayers

    NASA Astrophysics Data System (ADS)

    Venkat Narayana, M.; Manivel Raja, M.; Jammalamadaka, S. Narayana

    2018-02-01

    We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 Å/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 Å/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

  2. Functionalization of biomass carbonaceous aerogels: selective preparation of MnO2@CA composites for supercapacitors.

    PubMed

    Ren, Yumei; Xu, Qun; Zhang, Jianmin; Yang, Hongxia; Wang, Bo; Yang, Daoyuan; Hu, Junhua; Liu, Zhimin

    2014-06-25

    Functionalized porous carbon materials with hierarchical structure and developed porosity coming from natural and renewable biomass have been attracting tremendous attention recently. In this work, we present a facile and scalable method to synthesize MnO2 loaded carbonaceous aerogel (MnO2@CA) composites via the hydrothermal carbonaceous (HTC) process. We employ two reaction systems of the mixed metal ion precursors to study the optimal selective adsorption and further reaction of MnO2 precursor on CA. Our experimental results show that the system containing KMnO4 and Na2S2O3·5H2O exhibits better electrochemical properties compared with the reaction system of MnSO4·H2O and (NH4)2S2O8. For the former, the obtained MnO2@CA displays the specific capacitance of 123.5 F·g(-1). The enhanced supercapacitance of MnO2@CA nanocomposites could be ascribed to both electrochemical contributions of the loaded MnO2 nanoparticles and the porous structure of three-dimensional carbonaceous aerogels. This study not only indicates that it is vital for the reaction systems to match with porous carbonaceous materials, but also offers a new fabrication strategy to prepare lightweight and high-performance materials that can be used in energy storage devices.

  3. Exchange bias induced by the fully strained La{sub 2/3}Ca{sub 1/3}MnO{sub 3} dead layers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xie, Q. Y.; College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046; Wu, X. S., E-mail: xswu@nju.edu.cn

    A pure compressively strained La{sub 2/3}Ca{sub 1/3}MnO{sub 3} (LCMO) dead layer grown on (001)-oriented LaAlO{sub 3} substrate can show all the rich phenomenon of large bias field shift, coercive field enhancement, and high blocking temperature. The obtained exchange bias field (∼350 Oe) and the enhanced coercivity of about 1160 Oe at 5 K under 500 Oe cooling field are superior to that have been reported in LCMO-based ferromagnetic/antiferromagnetic superlattices or nanoscale systems. Our results clearly demonstrate that the inhomogeneous magnetic dead layer of LCMO can induce a strong exchange bias effect, which may be exploited as a very simple structure for spin-valve device application.

  4. Local atomic and electronic structure of LaCoO3 /SrTiO3 thin films by HAADF STEM and EELS

    NASA Astrophysics Data System (ADS)

    Borisevich, Albina; Hyuck Jang, Jae; Kim, Young-Min; Qiao, Liang; Biegalski, Michael

    2013-03-01

    For perovskite films with several competing functionalities, magnetic and electronic properties can be affected both by structural order parameters and chemical factors. For example, in LaCoO3 (LCO) thin films, magnetic and transport properties are strongly dependent on strain state and oxygen content. For this study, LCO thin films were deposited by pulsed laser deposition method with different thicknesses (2, 5, 15 unit cell and 20 nm thickness) on SrTiO3 substrate. X-ray photoelectron spectroscopy studies of the grown films have demonstrated that Co 3p edges shift up to 2 eV for 15 u.c. and 20 nm films, indicating possible presence of 2D electron gas. The structure of the 5 u.c and 15 u.c LCO films was examined. Atomic position mapping from STEM HAADF and BF images can reveal lattice parameter and octahedral tilt behavior with atomic resolution. BF STEM imaging showed that octahedral tilts were active in the 15 u.c. film but not in the 5 u.c. film. A complex pattern of O K fine structure evolution at the interface was observed; results of the deconvolution of different contributions to this behavior using advanced simulations, as well as data on oxygen vacancy mapping, will be presented. Research supported by the US DOE-BES, Materials Sciences and Engineering Division, and through a user project supported by ORNL's ShaRE User Program.

  5. Orientation-dependent structural and photocatalytic properties of LaCoO3 epitaxial nano-thin films

    PubMed Central

    Zhang, Yan-ping; Hu, Hai-long; Xie, Rui-shi; Ma, Guo-hua; Huo, Ji-chuan; Wang, Hai-bin

    2018-01-01

    LaCoO3 epitaxial films were grown on (100), (110) and (111) oriented LaAlO3 substrates by the polymer-assisted deposition method. Crystal structure measurement and cross-section observation indicate that all the LaCoO3 films are epitaxially grown in accordance with the orientation of LaAlO3 substrates, with biaxial compressive strain in the ab plane. Owing to the different strain directions of CoO6 octahedron, the mean Co–O bond length increases by different amounts in (100), (110) and (111) oriented films compared with that of bulk LaCoO3, and the (100) oriented LaCoO3 has the largest increase. Photocatalytic degradation of methyl orange indicates that the order of photocatalytic activity of the three oriented films is (100) > (111) > (110). Combined with analysis of electronic nature and band structure for LaCoO3 films, it is found that the change of the photocatalytic activity is closely related to the crystal field splitting energy of Co3+ and Co–O binding energy. The increase in the mean Co–O bond length will decrease the crystal field splitting energy of Co3+ and Co–O binding energy and further reduce the value of band gap energy, thus improving the photocatalytic activity. This may also provide a clue for expanding the visible-light-induced photocatalytic application of LaCoO3. PMID:29515854

  6. Orientation-dependent structural and photocatalytic properties of LaCoO3 epitaxial nano-thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Yan-ping; Liu, Hai-feng; Hu, Hai-long; Xie, Rui-shi; Ma, Guo-hua; Huo, Ji-chuan; Wang, Hai-bin

    2018-02-01

    LaCoO3 epitaxial films were grown on (100), (110) and (111) oriented LaAlO3 substrates by the polymer-assisted deposition method. Crystal structure measurement and cross-section observation indicate that all the LaCoO3 films are epitaxially grown in accordance with the orientation of LaAlO3 substrates, with biaxial compressive strain in the ab plane. Owing to the different strain directions of CoO6 octahedron, the mean Co-O bond length increases by different amounts in (100), (110) and (111) oriented films compared with that of bulk LaCoO3, and the (100) oriented LaCoO3 has the largest increase. Photocatalytic degradation of methyl orange indicates that the order of photocatalytic activity of the three oriented films is (100) > (111) > (110). Combined with analysis of electronic nature and band structure for LaCoO3 films, it is found that the change of the photocatalytic activity is closely related to the crystal field splitting energy of Co3+ and Co-O binding energy. The increase in the mean Co-O bond length will decrease the crystal field splitting energy of Co3+ and Co-O binding energy and further reduce the value of band gap energy, thus improving the photocatalytic activity. This may also provide a clue for expanding the visible-light-induced photocatalytic application of LaCoO3.

  7. Orientation-dependent structural and photocatalytic properties of LaCoO3 epitaxial nano-thin films.

    PubMed

    Zhang, Yan-Ping; Liu, Hai-Feng; Hu, Hai-Long; Xie, Rui-Shi; Ma, Guo-Hua; Huo, Ji-Chuan; Wang, Hai-Bin

    2018-02-01

    LaCoO 3 epitaxial films were grown on (100), (110) and (111) oriented LaAlO 3 substrates by the polymer-assisted deposition method. Crystal structure measurement and cross-section observation indicate that all the LaCoO 3 films are epitaxially grown in accordance with the orientation of LaAlO 3 substrates, with biaxial compressive strain in the ab plane. Owing to the different strain directions of CoO 6 octahedron, the mean Co-O bond length increases by different amounts in (100), (110) and (111) oriented films compared with that of bulk LaCoO 3 , and the (100) oriented LaCoO 3 has the largest increase. Photocatalytic degradation of methyl orange indicates that the order of photocatalytic activity of the three oriented films is (100) > (111) > (110). Combined with analysis of electronic nature and band structure for LaCoO 3 films, it is found that the change of the photocatalytic activity is closely related to the crystal field splitting energy of Co 3+ and Co-O binding energy. The increase in the mean Co-O bond length will decrease the crystal field splitting energy of Co 3+ and Co-O binding energy and further reduce the value of band gap energy, thus improving the photocatalytic activity. This may also provide a clue for expanding the visible-light-induced photocatalytic application of LaCoO 3 .

  8. Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

    PubMed

    Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

    2018-03-05

    The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

  9. Charge transport and magnetization profile at the interface between the correlated metal CaRuO3 and the antiferromagnetic insulator CaMnO3

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Freeland, J. W.; Chakhalian, J.; Boris, A. V.

    2010-01-01

    A combination of spectroscopic probes was used to develop a detailed experimental description of the transport and magnetic properties of superlattices composed of the paramagnetic metal CaRuO3 and the antiferromagnetic insulator CaMnO3. The charge carrier density and Ru valence state in the superlattices are not significantly different from those of bulk CaRuO3. The small charge transfer across the interface implied by these observations confirms predictions derived from density functional calculations. However, a ferromagnetic polarization due to canted Mn spins penetrates 3-4 unit cells into CaMnO3, far exceeding the corresponding predictions. The discrepancy may indicate the formation of magnetic polarons atmore » the interface.« less

  10. Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Lee, Hong-Sub; Park, Chang-Sun; Park, Hyung-Ho

    2014-05-01

    This study demonstrated that the resistive switching voltage of perovskite manganite material could be controlled by A-site cation substitution in "A" MnO3 perovskite manganite structure. A partial substitution of La3+ in La0.7Sr0.3MnO3 with smaller cation Gd3+ induced A-site vacancy of the largest Sr2+ cation with surface segregation of SrOy due to ionic size mismatch, and the induced vacancies reduced migration energy barrier. The operating voltage decreased from 3.5 V to 2.5 V due to a favorable condition for electrochemical migration and redox of oxygen ions. Moreover, surface-segregated SrOy was enhanced with Gd-substitution and the SrOy reduced Schottky-like barrier height and resistive switching ratio from the potential drop and screening effect. The relationship between A-site vacancy generation resulting in surface segregation of SrOy and resistive switching behavior was also investigated by energy resolved x-ray photoelectron spectroscopy, O 1s near edge x-ray absorption spectroscopy, and current voltage measurement.

  11. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

    NASA Astrophysics Data System (ADS)

    Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

    2018-04-01

    The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

  12. Design and fabrication of highly hydrophobic Mn nano-sculptured thin films and evaluation of surface properties on hydrophobicity

    NASA Astrophysics Data System (ADS)

    Hosseini, Somaye; Savaloni, Hadi; Gholipour-Shahraki, Mehran

    2017-03-01

    The wettability of solid surfaces is important from the aspects of both science and technology. The Mn nano-sculptured thin films were designed and fabricated by oblique angle deposition of Mn on glass substrates at room temperature. The obtained structure was characterized by field emission scanning electron microscopy and atomic force microscopy. The wettability of thin films samples was investigated by water contact angle (WCA). The 4-pointed helical star-shaped structure exhibits hydrophobicity with static WCAs of more than 133° for a 10-mg distilled water droplet. This sample also shows the rose petal effect with the additional property of high adhesion. The Mn nano-sculptured thin films also act as a sticky surface which is confirmed by hysteresis of the contact angle obtained from advancing and receding contact angles measurements. Physicochemical property of liquid phase could effectively change the contact angle, and polar solvents in contact with hydrophobic solid surfaces do not necessarily show high contact angle value.

  13. Local Magnetoelectric Effect in La-Doped BiFeO3 Multiferroic Thin Films Revealed by Magnetic-Field-Assisted Scanning Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Pan, Dan-Feng; Zhou, Ming-Xiu; Lu, Zeng-Xing; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-06-01

    Multiferroic La-doped BiFeO3 thin films have been prepared by a sol-gel plus spin-coating process, and the local magnetoelectric coupling effect has been investigated by the magnetic-field-assisted scanning probe microscopy connected with a ferroelectric analyzer. The local ferroelectric polarization response to external magnetic fields is observed and a so-called optimized magnetic field of ~40 Oe is obtained, at which the ferroelectric polarization reaches the maximum. Moreover, we carry out the magnetic-field-dependent surface conductivity measurements and illustrate the origin of local magnetoresistance in the La-doped BiFeO3 thin films, which is closely related to the local ferroelectric polarization response to external magnetic fields. This work not only provides a useful technique to characterize the local magnetoelectric coupling for a wide range of multiferroic materials but also is significant for deeply understanding the local multiferroic behaviors in the BiFeO3-based systems.

  14. Spectral Weight Redistribution in ( LaNiO 3 ) n / ( LaMnO 3 ) 2 Superlattices from Optical Spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Di Pietro, P.; Hoffman, J.; Bhattacharya, A.

    2015-04-01

    We have studied the optical properties of four (LaNiO3)(n)/(LaMnO3)(2) superlattices (SL) (n = 2, 3, 4, 5) on SrTiO3 substrates. We have measured the reflectivity at temperatures from 20 to 400 K, and extracted the optical conductivity through a fitting procedure based on a Kramers-Kronig consistent Lorentz-Drude model. With increasing LaNiO3 thickness, the SLs undergo an insulator-to-metal transition (IMT) that is accompanied by the transfer of spectral weight from high to low frequency. The presence of a broad midinfrared band, however, shows that the optical conductivity of the (LaNiO3)(n)/(LaMnO3)(2) SLs is not a linear combination of the LaMnO3 and LaNiO3more » conductivities. Our observations suggest that interfacial charge transfer leads to an IMT due to a change in valence at the Mn and Ni sites.« less

  15. Synthesis of Mn-doped ZnS thin films by chemical bath deposition: Optical properties in the visible region

    NASA Astrophysics Data System (ADS)

    Erken, Ozge; Gunes, Mustafa; Gumus, Cebrail

    2017-04-01

    Transparent ZnS:Mn thin films were produced by chemical bath deposition (CBD) technique at 80 °C for 4h, 6h and 8h durations. The optical properties such as optical transmittance (T %), reflectance (R %), extinction coefficient (k) and refractive index (n) were deeply investigated in terms of contribution ratio, wavelength and film thickness. The optical properties of ZnS:Mn thin films were determined by UV/vis spectrophotometer transmittance measurements in the range of λ=300-1100 nm. Optical transmittances of the films were found from 12% to 92% in the visible region. The refractive index (n) values for visible region were calculated as 1.34-5.09. However, film thicknesses were calculated between 50 and 901 nm by gravimetric analysis.

  16. Crystal growth and characterization of the CMR compound La 1.2(Sr,Ca) 1.8Mn 2O 7

    NASA Astrophysics Data System (ADS)

    Velázquez, M.; Haut, C.; Hennion, B.; Revcolevschi, A.

    2000-12-01

    High-quality centimeter-sized single crystals of La 1.2Sr 1.8- yCa yMn 2O 7 (0.0⩽ y⩽0.2) were successfully grown using a floating zone method associated with an image furnace. We present the growth conditions together with a characterization of the single crystals by means of optical and electron microscopy, EDX and ICP⧸AES analysis, DTA-TGA measurements and redox titration, X-ray powder diffraction, Laue X-ray back-reflection and neutron diffraction. We also stress the main aspects of the complex thermodynamical and kinetic behaviors of these compounds.

  17. Exciting transition metal doped dilute magnetic thin films: MgO:Er and ZnO:Er

    NASA Astrophysics Data System (ADS)

    Ćakıcı, T.; Sarıtaş, S.; Muǧlu, G. Merhan; Yıldırım, M.

    2017-02-01

    Erbium doped MgO and doped ZnO thin films have reasonably important properties applications in spintronic devices. These films were synthesized on glass substrates by Chemical Spray Pyrolysis (CSP) method. In the literature there has been almost no report on preparation of MgO:Er dilute magnetic thin films by means of CSP. Because doped thin films show different magnetic behaviors, depending upon the type of magnetic material ions, concentration of them, synthesis route and experimental conditions, synthesized MgO:Er and ZnO:Er films were compared to thin film properties. Optical analyses of the synthesized thin films were examined spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Structural analysis of the thin films was examined by using XRD, Raman Analysis, FE-SEM, EDX and AFM techniques. Also, magnetic properties of the MgO:Er and ZnO:Er films were investigated by vibrating sample magnetometer (VSM) which show that diamagnetic behavior of the MgO:Er thin film and ferromagnetic (FM) behavior of the ZnO:Er film were is formed.

  18. TI--CR--AL--O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  19. Temperature- and Bias-Dependence of Magnetoresistance in Doped Manganite Thin Film Trilayer Junctions

    NASA Astrophysics Data System (ADS)

    Sun, J. Z.; Xiao, Gang

    1998-03-01

    Large low-field magnetoresistance, up to a factor of five change in resistance, was observed in trilayer junctions formed by epitaxial thin films of La_0.67Sr_0.33 MnO3 - SrTiO3 - La_0.67Sr_0.33MnO3 at 4.2K and 100 Oe. Such magnetoresistance decreases with increasing sample temperature, and disappears for temperatures above 150K. The magnetoresistance also decreases upon increasing bias voltage across the junction. We present systematic experimental studies of both temperature and bias-dependence. These results in manganite trilayer junctions at low temperatures are similar to what has been observed in metallic trilayer magnetic tunneling valves, and are qualitatively consistent with the interface magnon excitation model proposed by Zhang et al.(S. Zhang, P. M. Levy, A. C. Marley and S. S. P. Parkin, Phys. Rev. Lett. 79), 3744 (1997).

  20. Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Rohrer, N. J.; Warner, J. D.; Bhasin, K. B.

    1989-01-01

    The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

  1. Interrelation between domain structures and polarization switching in hybrid improper ferroelectric Ca3(Mn,Ti)2O7

    NASA Astrophysics Data System (ADS)

    Gao, Bin; Huang, Fei-Ting; Wang, Yazhong; Kim, Jae-Wook; Wang, Lihai; Lim, Seong-Joon; Cheong, Sang-Wook

    2017-05-01

    Ca3Mn2O7 and Ca3Ti2O7 have been proposed as the prototypical hybrid improper ferroelectrics (HIFs), and a significant magnetoelectric (ME) coupling in magnetic Ca3Mn2O7 is, in fact, reported theoretically and experimentally. Although the switchability of polarization is confirmed in Ca3Ti2O7 and other non-magnetic HIFs, there is no report of switchable polarization in the isostructural Ca3Mn2O7. We constructed the phase diagram of Ca3Mn2-xTixO7 through our systematic study of a series of single crystalline Ca3Mn2-xTixO7 (x = 0, 0.1, 1, 1.5, and 2). Using transmission electron microscopy, we have unveiled the unique domain structure of Ca3Mn2O7: the high-density 90° stacking of a- and b-domains along the c-axis due to the phase transition through an intermediate Acca phase and the in-plane irregular wavy ferroelastic twin domains. The interrelation between domain structures and physical properties is unprecedented: the stacking along the c-axis prevents the switching of polarization and causes the irregular in-plane ferroelastic domain pattern. In addition, we have determined the magnetic phase diagram and found complex magnetism of Ca3Mn2O7 with isotropic canted moments. These results lead to negligible observable ME coupling in Ca3Mn2O7 and guide us to explore multiferroics with large ME coupling.

  2. Element-specific study of the temperature dependent magnetization of Co-Mn-Sb thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schmalhorst, J.; Ebke, D.; Meinert, M.

    Magnetron sputtered thin Co-Mn-Sb films were investigated with respect to their element-specific magnetic properties. Stoichiometric Co{sub 1}Mn{sub 1}Sb{sub 1} crystallized in the C1{sub b} structure has been predicted to be half-metallic and is therefore of interest for spintronics applications. It should show a characteristic antiferromagnetic coupling of the Mn and Co magnetic moments and a transition temperature T{sub C} of about 480K. Although the observed transition temperature of our 20nm thick Co{sub 32.4}Mn{sub 33.7}Sb{sub 33.8}, Co{sub 37.7}Mn{sub 34.1}Sb{sub 28.2} and Co{sub 43.2}Mn{sub 32.6}Sb{sub 24.2} films is in quite good agreement with the expected value, we found a ferromagnetic coupling ofmore » the Mn and Co magnetic moments which indicates that the films do not crystallize in the C1{sub b} structure and are probably not fully spin-polarized. The ratio of the Co and Mn moments does not change up to the transition temperature and the temperature dependence of the magnetic moments can be well described by the mean field theory.« less

  3. Disappearance of Ising nature in Ca3ZnMnO6 studied by high-field ESR.

    PubMed

    Ruan, M Y; Ouyang, Z W; Guo, Y M; Cheng, J J; Sun, Y C; Xia, Z C; Rao, G H; Okubo, S; Ohta, H

    2014-06-11

    High-field electron spin resonance measurements of an antiferromagnet Ca3ZnMnO6 isostructure, with the Ising-chain multiferroic Ca3CoMnO6, have been carried out. Two distinct resonance modes were observed below TN = 25 K, which is well explained by conventional antiferromagnetic resonance theory with easy-plane anisotropy. The zero-field spin gap is derived to be about 166 GHz, originating from the easy-plane anisotropy and exchange interaction. Our result suggests that the Dzyaloshinsky-Moriya interaction, which may induce spin canting, is absent. Disappearance of Ising anisotropy in Ca3ZnMnO6 suggests that the Co(4+) ion, as well as the Co-Mn superexchange, plays an important role for the Ising nature in Ca3CoMnO6.

  4. Epitaxial structure and transport in LaTiO3+x films on (001) SrTiO3

    NASA Astrophysics Data System (ADS)

    Kim, K. H.; Norton, D. P.; Budai, J. D.; Chisholm, M. F.; Sales, B. C.; Christen, D. K.; Cantoni, C.

    2003-12-01

    The structure and transport properties of LaTiO3+x epitaxial thin films grown on (001) SrTiO3 by pulsed-laser deposition is examined. Four-circle X-ray diffraction indicates that the films possess the defect perovskite LaTiO3 structure when deposited in vacuum, with the higher X compounds forming at moderate oxygen pressures. The crystal structure of the LaTiO3 films is tetragonal in the epitaxial films, in contrast to the orthorhombic structure observed in bulk materials. A domain structure is observed in the films, consisting of LaTiO3 oriented either with the [110] or [001] directions perpendicular to the substrate surface. Z-contrast scanning transmission electron microscopy reveals that this domain structure is not present in the first few unit cells of the film, but emerges approximately 2-3 nm from the SrTiO3/LaTiO3 interface. Upon increasing the oxygen pressure during growth, a shift in the lattice d-spacing parallel to the substrate surface is observed, and is consistent with the growth of the La2Ti2O7 phase. However, van der Pauw measurements show that the films with the larger d-spacing remain conductive, albeit with a resistivity that is significantly higher than that for the perovskite LaTiO3 films. The transport behavior suggests that the films grown at higher oxygen pressures are LaTiO3+x with 0.4 < x < 0.5. (

  5. Bulk magnetic properties of La1-xCaxMnO3 (0⩽x⩽0.14) : Signatures of local ferromagnetic order

    NASA Astrophysics Data System (ADS)

    Terashita, Hirotoshi; Neumeier, J. J.

    2005-04-01

    We report the bulk magnetic properties of hole-doped La1-xCaxMnO3 (0⩽x⩽0.14) in the paramagnetic and antiferromagnetic regions; the Mn4+ concentration was determined with chemical analysis. Significant enhancement of the effective paramagnetic moment illustrates the existence of ferromagnetic clusters (polarons). The data reveal a distinct crossover in the paramagnetic region, signifying competition between ferromagnetic clusters and antiferromagnetic correlations associated with the low-temperature magnetically ordered state. The results suggest similarity in the magnetic properties at low temperatures between hole-doped LaMnO3 and electron-doped CaMnO3 .

  6. Transport properties and c/a ratio of V{sub 2}O{sub 3} thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sakai, Joe; Limelette, Patrice; Funakubo, Hiroshi

    2015-12-14

    We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratiosmore » were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.« less

  7. Effect of substrate on the atomic structure and physical properties of thermoelectric Ca₃Co₄O₉ thin films.

    PubMed

    Qiao, Q; Gulec, A; Paulauskas, T; Kolesnik, S; Dabrowski, B; Ozdemir, M; Boyraz, C; Mazumdar, D; Gupta, A; Klie, R F

    2011-08-03

    The incommensurately layered cobalt oxide Ca(3)Co(4)O(9) exhibits an unusually high Seebeck coefficient as a polycrystalline bulk material, making it ideally suited for many high temperature thermoelectric applications. In this paper, we investigate properties of Ca(3)Co(4)O(9) thin films grown on cubic perovskite SrTiO(3), LaAlO(3), and (La(0.3)Sr(0.7))(Al(0.65)Ta(0.35))O(3) substrates and on hexagonal Al(2)O(3) (sapphire) substrates using the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy analysis indicate strain-free growth of films, irrespective of the substrate. However, depending on the lattice and symmetry mismatch, defect-free growth of the hexagonal CoO(2) layer is stabilized only after a critical thickness and, in general, we observe the formation of a stable Ca(2)CoO(3) buffer layer near the substrate-film interface. Beyond this critical thickness, a large concentration of CoO(2) stacking faults is observed, possibly due to weak interlayer interaction in this layered material. We propose that these stacking faults have a significant impact on the Seebeck coefficient and we report higher values in thinner Ca(3)Co(4)O(9) films due to additional phonon scattering sites, necessary for improved thermoelectric properties.

  8. Preparation of TlBa2Ca2Cu3O9±δ high Tc thin films by laser ablation in combination with thermal evaporation of thallium oxide

    NASA Astrophysics Data System (ADS)

    Piehler, A.; Löw, R.; Betz, J.; Schönberger, R.; Renk, K. F.

    1993-11-01

    TlBa2Ca2Cu3O9±δ high Tc thin films were prepared on MgO <100> surfaces by a combination of laser ablation from a stoichiometric Ba2Ca2Cu3Ox target and the thermal evaporation of thallium oxide. X-ray diffraction measurements showed that the films consisted of predominantly c axis oriented TlBa2Ca2Cu3O9±δ, and scanning electron microscopy revealed that the surfaces had a flat, platelike morphology. The ac inductive measurements indicated that the onset of superconductivity occurred at 117 K with a transition width (10%-90%) of ˜3 K. Zero resistivity was reached at 120 K. The critical current density was ˜3×104 A/cm2 at 110 K.

  9. Channelling study of La1-xSrxCoO3 films on different substrates

    NASA Astrophysics Data System (ADS)

    Szilágyi, E.; Kótai, E.; Rata, D.; Németh, Z.; Vankó, G.

    2014-08-01

    The cobalt oxide system LaCoO3 and its Sr-doped child compounds have been intensively studied for decades due to their intriguing magnetic and electronic properties. Preparing thin La1-xSrxCoO3 (LSCO) films on different substrates allows for studies with a new type of perturbation, as the films are subject to substrate-dependent epitaxial strain. By choosing a proper substrate for a thin film grow, not only compressing but also tensile strain can be applied. The consequences for the fundamental physical properties are dramatic: while compressed films are metallic, as the bulk material, films under tensile strain become insulating. The goal of this work is to determine the strain tensor in LSCO films prepared on LaAlO3 and SrTiO3 substrates by pulsed laser deposition using RBS/channelling methods. Apart from the composition and defect structure of the samples, the depth dependence of the strain tensor, the cell parameters, and the volume of the unit cell are also determined. Asymmetric behaviour of the strained cell parameters is found on both substrates. This asymmetry is rather weak in the case of LSCO film grown on LaAlO3, while stronger on SrTiO3 substrate. The strain is more effective at the interface, some relaxation can be observed near to the surface.

  10. thin film capacitors

    NASA Astrophysics Data System (ADS)

    Bodeux, Romain; Gervais, Monique; Wolfman, Jérôme; Gervais, François

    2014-09-01

    CaCu3Ti4O12 (CCTO) thin films were grown by pulsed laser deposition on Pt and La0.9Sr1.1NiO4 (LSNO) bottom electrodes. The electrical characteristics of the CCTO/Pt and CCTO/LSNO Schottky junctions have been analyzed by impedance spectroscopy, capacitance-voltage (C-V) and current-voltage (I-V) measurements as a function of frequency (40 Hz-1 MHz) and temperature (300-475 K). Similar results were obtained for the two Schottky diodes. The conduction mechanism through the Schottky junctions was described using a thermionic emission model and the electrical parameters were determined. The strong deviation from the ideal I-V characteristics and the increase in capacitance at low frequency for -0.5 V bias are in agreement with the presence of traps near the interfaces. Results point toward the important effect of defects generated at the interface by deposition of CCTO.

  11. Structural and mechanical properties of lanthanide doped La1/3Nb0.8Ta0.2O3 thin films prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Brunckova, Helena; Medvecky, Lubomir; Kovalcikova, Alexandra; Fides, Martin; Mudra, Erika; Durisin, Juraj; Skvarla, Jiri; Kanuchova, Maria

    2017-04-01

    Transparent Eu and Nd doped lanthanum niobate tantalate La1/3Nb0.8Ta0.2O3 (LNT) thin films (˜150 nm) were prepared by sol-gel/spin-coating process on Pt/SiO2/Si substrates and annealing at 1100 °C. The x-ray diffraction analysis of films confirmed formation of the perovskite La1/3NbO3 and La1/3TaO3 phases with traces of pyrochlore LaNbO4. Eu and Nd doped LNT films were smoother with roughness 17.1 and 25.4 nm in comparison with LNT (43.3 nm). In all films was observed heterogeneous microstructure with the perovskite spherical and pyrochlore needle-like particles. The mechanical properties of films were characterized for the first time by conventional and continuous stiffness (CSM) nanoindentation. The Eu and Nd doped LNT film modulus (E) and hardness (H) were higher than LNT (˜99.8 and 4.4 GPa) determined by conventional nanoindentation. It was measured the significant effect of substrate on properties of Eu or Nd films (H ˜ 5.9 or 4.9 GPa and E ˜ 107.3 or 104.1 GPa) by CSM nanoindentation.

  12. Transmission and reflection studies of thin films in the vacuum ultraviolet

    NASA Technical Reports Server (NTRS)

    Peterson, Lennart R.

    1989-01-01

    Both the transmittance and reflectance of 2 mm thick MgF2 substrates and of thin films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on these substrates were measured for the wavelength range 120 nm to 230 nm. Results for BaF2, LaF2 and MgF2 show promise as being good materials from which interference filters can be made. The software and related hardware needed to take large amounts of data automatically in future measurements of the transmittance and reflectance was developed.

  13. Sol gel synthesis and characterization studies of Cupromanganite CaCu3Mn4O12

    NASA Astrophysics Data System (ADS)

    Nurulhuda, A.; Warikh, A. R. M.; Hafizzal, Y.

    2017-08-01

    A single-phase CaCu3Mn4O12 electroceramic had been prepared via sol gel method and fairly well densified at relative low temperature under atmospheric condition where the crystallization of CaCu3Mn4O12 occurred due to amorphous polymeric mixture. The precursor was prepared by mixing the solutions with 0.6 M citric acid (C6H8O7) as a chelating reagent with the mol ratio 1:2. The precursor gel formed was calcined and sintered at range 400 °C to 800°C by varying dwell time. Material formations under the reported conditions have been confirmed by X-ray diffraction (XRD). The results show that the formation of CaCu3Mn4O12 started at 500 ° C and was formed completely at 700 ° C for 18 hours. The microstructure of all CaCu3Mn4O12 was analysed using field emission scanning electron microscopy (FESEM). A smaller particle size with higher grain boundary was obtained at sintering 700°C to 800°C. FESEM results show the significant influence of calcinations and sintering parameter on the microstructure behaviour of CaCu2Mn4O12.

  14. Estimation of the magnetic entropy change by means of Landau theory and phenomenological model in La0.6Ca0.2 Sr0.2MnO3/Sb2O3 ceramic composites

    NASA Astrophysics Data System (ADS)

    Nasri, M.; Dhahri, E.; Hlil, E. K.

    2018-06-01

    In this paper, magnetocaloric properties of La0.6Ca0.2Sr0.2MnO3/Sb2O3 oxides have been investigated. The composite samples were prepared using the conventional solid-state reaction method. The second-order phase transition can be testified with the positive slope in Arrott plots. An excellent agreement has been found between the -ΔSM values estimated by Landau theory and those obtained using the classical Maxwell relation. The field dependence of the magnetic entropy change analysis shows a power law dependence,|ΔSM|≈Hn , with n(TC) = 0.65. Moreover, the scaling analysis of magnetic entropy change exhibits that ΔSM(T) curves collapse into a single universal curve, indicating that the observed paramagnetic to ferromagnetic phase transition is an authentic second-order phase transition. The maximum value of magnetic entropy change of composites is found to decrease slightly with the further increasing of Sb2O3 concentration. A phenomenological model was used to predict magnetocaloric properties of La0.6Ca0.2Sr0.2MnO3/Sb2O3 composites. The theoretical calculations are compared with the available experimental data.

  15. Hybrid density functional study of structural, bonding, and electronic properties of the manganite series La1-xCaxMnO3 (x =0,1/4,1)

    NASA Astrophysics Data System (ADS)

    Korotana, R.; Mallia, G.; Gercsi, Z.; Liborio, L.; Harrison, N. M.

    2014-05-01

    Hybrid-exchange density functional theory calculations are carried out to determine the effects of A-site doping on the electronic and magnetic properties of the manganite series La1-xCaxMnO3. This study focuses on the ground state of an ordered Ca occupancy in a periodic structure. It is shown that the hybrid-exchange functional, Becke three-parameter Lee-Yang-Parr (B3LYP), provides an accurate and consistent description of the electronic structure for LaMnO3, CaMnO3, and La0.75Ca0.25MnO3. We have quantified the relevant structural, magnetic, and electronic energy contributions to the stability of the doped compound. An insight into the exchange coupling mechanism for the low hole density region of the phase diagram, where a polaron (anti-Jahn-Teller) forms, is also provided. This study completes a microscopic description of the lightly doped insulator with an antiferromagnetic-to-ferromagnetic and metal-to-insulator transition.

  16. Prediction of possible CaMnO3 modifications using an ab initio minimization data-mining approach.

    PubMed

    Zagorac, Jelena; Zagorac, Dejan; Zarubica, Aleksandra; Schön, J Christian; Djuris, Katarina; Matovic, Branko

    2014-10-01

    We have performed a crystal structure prediction study of CaMnO3 focusing on structures generated by octahedral tilting according to group-subgroup relations from the ideal perovskite type (Pm\\overline 3 m), which is the aristotype of the experimentally known CaMnO3 compound in the Pnma space group. Furthermore, additional structure candidates have been obtained using data mining. For each of the structure candidates, a local optimization on the ab initio level using density-functional theory (LDA, hybrid B3LYP) and the Hartree--Fock (HF) method was performed, and we find that several of the modifications may be experimentally accessible. In the high-pressure regime, we identify a post-perovskite phase in the CaIrO3 type, not previously observed in CaMnO3. Similarly, calculations at effective negative pressure predict a phase transition from the orthorhombic perovskite to an ilmenite-type (FeTiO3) modification of CaMnO3.

  17. Thermoelectric properties of Ca0.8Dy0.2MnO3 synthesized by solution combustion process

    NASA Astrophysics Data System (ADS)

    Park, Kyeongsoon; Lee, Ga Won

    2011-10-01

    High-quality Ca0.8Dy0.2MnO3 nano-powders were synthesized by the solution combustion process. The size of the synthesized Ca0.8Dy0.2MnO3 powders was approximately 23 nm. The green pellets were sintered at 1150-1300°C at a step size of 50°C. Sintered Ca0.8Dy0.2MnO3 bodies crystallized in the perovskite structure with an orthorhombic symmetry. The sintering temperature did not affect the Seebeck coefficient, but significantly affected the electrical conductivity. The electrical conductivity of Ca0.8Dy0.2MnO3 increased with increasing temperature, indicating a semiconducting behavior. The absolute value of the Seebeck coefficient gradually increased with an increase in temperature. The highest power factor (3.7 × 10-5 Wm-1 K-2 at 800°C) was obtained for Ca0.8Dy0.2MnO3 sintered at 1,250°C. In this study, we investigated the microstructure and thermoelectric properties of Ca0.8Dy0.2MnO3, depending on sintering temperature.

  18. Thermoelectric properties of Ca0.8Dy0.2MnO3 synthesized by solution combustion process

    PubMed Central

    2011-01-01

    High-quality Ca0.8Dy0.2MnO3 nano-powders were synthesized by the solution combustion process. The size of the synthesized Ca0.8Dy0.2MnO3 powders was approximately 23 nm. The green pellets were sintered at 1150-1300°C at a step size of 50°C. Sintered Ca0.8Dy0.2MnO3 bodies crystallized in the perovskite structure with an orthorhombic symmetry. The sintering temperature did not affect the Seebeck coefficient, but significantly affected the electrical conductivity. The electrical conductivity of Ca0.8Dy0.2MnO3 increased with increasing temperature, indicating a semiconducting behavior. The absolute value of the Seebeck coefficient gradually increased with an increase in temperature. The highest power factor (3.7 × 10-5 Wm-1 K-2 at 800°C) was obtained for Ca0.8Dy0.2MnO3 sintered at 1,250°C. In this study, we investigated the microstructure and thermoelectric properties of Ca0.8Dy0.2MnO3, depending on sintering temperature. PMID:21974984

  19. Thermoelectric properties of Ca0.8Dy0.2MnO3 synthesized by solution combustion process.

    PubMed

    Park, Kyeongsoon; Lee, Ga Won

    2011-10-05

    High-quality Ca0.8Dy0.2MnO3 nano-powders were synthesized by the solution combustion process. The size of the synthesized Ca0.8Dy0.2MnO3 powders was approximately 23 nm. The green pellets were sintered at 1150-1300°C at a step size of 50°C. Sintered Ca0.8Dy0.2MnO3 bodies crystallized in the perovskite structure with an orthorhombic symmetry. The sintering temperature did not affect the Seebeck coefficient, but significantly affected the electrical conductivity. The electrical conductivity of Ca0.8Dy0.2MnO3 increased with increasing temperature, indicating a semiconducting behavior. The absolute value of the Seebeck coefficient gradually increased with an increase in temperature. The highest power factor (3.7 × 10-5 Wm-1 K-2 at 800°C) was obtained for Ca0.8Dy0.2MnO3 sintered at 1,250°C. In this study, we investigated the microstructure and thermoelectric properties of Ca0.8Dy0.2MnO3, depending on sintering temperature.

  20. LaAlO3:Mn4+ as Near-Infrared Emitting Persistent Luminescence Phosphor for Medical Imaging: A Charge Compensation Study

    PubMed Central

    De Clercq, Olivier Q.; Korthout, Katleen

    2017-01-01

    Mn4+-activated phosphors are emerging as a novel class of deep red/near-infrared emitting persistent luminescence materials for medical imaging as a promising alternative to Cr3+-doped nanomaterials. Currently, it remains a challenge to improve the afterglow and photoluminescence properties of these phosphors through a traditional high-temperature solid-state reaction method in air. Herein we propose a charge compensation strategy for enhancing the photoluminescence and afterglow performance of Mn4+-activated LaAlO3 phosphors. LaAlO3:Mn4+ (LAO:Mn4+) was synthesized by high-temperature solid-state reaction in air. The charge compensation strategies for LaAlO3:Mn4+ phosphors were systematically discussed. Interestingly, Cl−/Na+/Ca2+/Sr2+/Ba2+/Ge4+ co-dopants were all found to be beneficial for enhancing LaAlO3:Mn4+ luminescence and afterglow intensity. This strategy shows great promise and opens up new avenues for the exploration of more promising near-infrared emitting long persistent phosphors for medical imaging. PMID:29231901

  1. In Situ Stress Evolution in Li 1+x Mn 2 O 4 Thin Films during Electrochemical Cycling in Li-Ion Cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sheth, Jay; Karan, Naba K.; Abraham, Daniel P.

    2016-01-01

    Real time monitoring of stress evolution in electrodes during electrochemical cycling can help quantify the driving forces that dictate their mechanical degradation. In the present work, in-situ stress evolution in thin films of spinel Li 1+x Mn 2 O 4 (LMO) was measured by monitoring the change in the elastic substrate curvature during electrochemical cycling in a specially designed beaker cell in the 3.5–4.3 V (vs. Li/Li+) voltage range. The LMO thin films were prepared using a solution deposition technique and their structures and morphologies were characterized by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The stressmore » evolution in the early part of the first delithiation cycle (<4.05 V) was consistent with the XRD data. However, stress evolution during later stages of the first delithiation cycle (>4.05 V) was not consistent with the XRD results, and showed irreversible behavior, suggesting irreversible changes in the electrode. Beyond the first delithiation cycle, the stress evolution was reversible, with a steady buildup of compressive and tensile stress during lithium insertion and extraction, respectively. Measurements on LMO films of varying thicknesses suggest that the first cycle irreversibility in stress response arises primarily from the electrode bulk.« less

  2. Magnetoelectric coupling in oxygen deficient La0.67Sr0.33MnO3-δ/BaTiO3 composite film

    NASA Astrophysics Data System (ADS)

    Wang, Jianyuan; Han, Zhuokun; Bai, Jianying; Luo, Bingcheng; Chen, Changle

    2018-04-01

    The effect of magnetic field on the polarization and dielectric properties in oxygen deficient La0.67Sr0.33MnO3-δ/BaTiO3 composite film are investigated. A temperature dependent polarization variation induced by the magnetic field is observed. Under a magnetic fields of 0.8 T, the enhancement of saturation polarization is remarkable at low temperature region with a maximum changing rate 66.5% occurring at 70 K, whereas it is indistinctive at high temperature. The composite film also exhibits significant magnetodielectric property. The positive changing rate of dielectric constant ηε induced by 0.8 T magnetic field reaches the maximum of 80% and 57% at 80 K with the frequency of 1 kHz and 100 kHz, respectively, and the corresponding changing rate of dielectric loss get the negative peak of -27% and -22%. The magneto-induced polarization and dielectric change may result from the charge-based coupling as well as the Maxwell-Wagner effect in this heterojunction.

  3. Low temperature specific heat of charge ordered Pr_1-xCa_xMnO_3

    NASA Astrophysics Data System (ADS)

    Smolyaninova, V. N.; Biswas, Amlan; Zhang, X.; Greene, R. L.

    2000-03-01

    Mixed-valent perovskite manganese oxides at certain doping levels develope a real space ordering of Mn^3+ and Mn^4+ at low temperatures^1, which can be destroyed (``melted'') by the application of a modest magnetic field.^2 To better understand the low-temperature ground state and the physics of the ``melted'' charge-ordered state, the specific heat, resistivity and magnetization of charge-ordered Pr_1-xCa_xMnO3 were measured with and without magnetic field for single crystal and ceramic samples of different x. A large excess specific heat of nonmagnetic origin was found, similar to that found in La_0.5Ca_0.5MnO3 ^3. Significant changes in the specific heat associated with the ``melting'' of the charge ordering were observed in applied magnetic fields up to 9 T. Possible explanations for this anomalous specific heat and its magnetic field dependence will be discussed . ^*This work is supported in part by NSF MRSEC Grant at the University of Maryland. ^1S. Mori, C. H. Chen and S-W. Cheong, Nature 392, 473 (1998). ^2Y. Tomioka et al., Phys. Rev. Lett. 74, 5108 (1995). ^3V. N. Smolyaninova, K. Ghosh and R. L. Greene, Phys. Rev. B 58, R14 725 (1998).

  4. Synthesis and magnetic properties of the thin film exchange spring system of MnBi/FeCo

    NASA Astrophysics Data System (ADS)

    Sabet, S.; Hildebrandt, E.; Alff, L.

    2017-10-01

    Manganese bismuth thin films with a nominal thickness of ∼40 nm were grown at room temperature onto quartz glass substrate in a DC magnetron sputtering unit. In contrast to the usual multilayer approach, the MnBi films were deposited using a single sputtering target with a stoichiometry of Mn55Bi45 (at. %). A subsequent in-situ annealing step was performed in vacuum in order to form the ferromagnetic LTP of MnBi. X-ray diffraction confirmed the formation of a textured LTP MnBi hard phase after annealing at 330 °C. This film shows a maximum saturation magnetization of 530 emu/cm3, high out-of-plane coercivity of 15 kOe induced by unreacted bismuth. The exchange coupling effect was investigated by deposition of a second layer of FeCo with 1 nm and 2 nm thickness onto the LTP MnBi films. The MnBi/FeCo double layer showed as expected higher saturation magnetization with increasing thickness of the FeCo layer while the coercive field remained constant. The fabrication of the MnBi/FeCo double layer for an exchange spring magnet was facilitated by deposition from a single stoichiometric target.

  5. Memory switches based on metal oxide thin films

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

    1990-01-01

    MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

  6. Electronic transport properties of nanostructured MnSi-films

    NASA Astrophysics Data System (ADS)

    Schroeter, D.; Steinki, N.; Scarioni, A. Fernández; Schumacher, H. W.; Süllow, S.; Menzel, D.

    2018-05-01

    MnSi, which crystallizes in the cubic B20 structure, shows intriguing magnetic properties involving the existence of skyrmions in the magnetic phase diagram. Bulk MnSi has been intensively investigated and thoroughly characterized, in contrast to MnSi thin film, which exhibits widely varying properties in particular with respect to electronic transport. In this situation, we have set out to reinvestigate the transport properties in MnSi thin films by means of studying nanostructure samples. In particular, Hall geometry nanostructures were produced to determine the intrinsic transport properties.

  7. A -Site Ordered Double Perovskite CaMnTi 2 O 6 as a Multifunctional Piezoelectric and Ferroelectric–Photovoltaic Material

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gou, Gaoyang; Charles, Nenian; Shi, Jing

    2017-09-11

    The double perovskite CaMnTi2O6, is a rare A site ordered perovskite oxide that exhibits a sizable ferroelectric polarization and relatively high Curie temperature. Using first-principles calculations combined with detailed symmetry analyses, we identify the origin of the ferroelectricity in CaMnTi2O6. We further explore the material properties of CaMnTi2O6, including its ferroelectric polarization, dielectric and piezoelectric responses, magnetic order, electronic structure, and optical absorption coefficient. It is found that CaMnTi2O6 exhibits room-temperature-stable ferroelectricity and moderate piezoelectric responses. Moreover, CaMnTi2O6 is predicted to have a semiconducting energy band gap similar to that of BiFeO3, and its band gap can further be tuned-viamore » distortions of the planar Mn-O bond lengths. CaMnTi2O6 exemplifies a new class of single-phase semiconducting ferroelectric perovskites for potential applications in ferroelectric photovoltaic solar cells.« less

  8. Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

    NASA Astrophysics Data System (ADS)

    Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

    2017-05-01

    In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

  9. Soft X-ray absorption spectroscopy investigations of Bi{sub 6}FeCoTi{sub 3}O{sub 18} and LaBi{sub 5}FeCoTi{sub 3}O{sub 18} epitaxial thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cui, Zhangzhang; Huang, Haoliang; Fu, Zhengping

    High-quality single-crystalline Bi{sub 6}FeCoTi{sub 3}O{sub 18} and LaBi{sub 5}FeCoTi{sub 3}O{sub 18} thin films were prepared by pulsed laser deposition. X-ray diffraction characterizations indicate a more disordered lattice structure of the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film. The magnetic measurement results demonstrated significantly enhanced ferromagnetism in the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film. The modulation of oxidation and hybridization states caused by substituting Bi with La was studied using the soft X-ray absorption spectroscopy. The spectroscopic results revealed the reduced concentration of oxygen vacancies and the more distorted lattice structure in the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film, which explained the enhanced ferromagnetism.

  10. Continuous Magnetoelectric Control in Multiferroic DyMnO3 Films with Twin-like Domains

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Deniz, Hakan; Li, Xiang; Liu, Jun-Ming; Cheong, Sang-Wook

    2016-02-01

    The magnetic control of ferroelectric polarization is currently a central topic in the multiferroic researches, owing to the related gigantic magnetoelectric coupling and fascinating physics. Although a bunch of novel magnetoelectric effect have been discovered in multiferroics of magnetic origin, the manipulation of polarization was found to be fundamentally determined by the microscopic origin in a certain multiferroic phase, hindering the development of unusual magnetoelectric control. Here, we report emergent magnetoelectric control in DyMnO3/Nb:SrTiO3 (001) films showing twin-like domain structure. Our results demonstrate interesting magnetically induced partial switch of polarization due to the coexistence of polarizations along both the a-axis and c-axis enabled by the twin-like domain structure in DyMnO3 films, despite the polarization-switch was conventionally believed to be a one-step event in the bulk counterpart. Moreover, a continuous and periodic control of macroscopic polarization by an in-plane rotating magnetic field is evidenced in the thin films. This distinctive magnetic manipulation of polarization is the consequence of the cooperative action of the twin-like domains and the dual magnetic origin of polarization, which promises additional applications using the magnetic control of ferroelectricity.

  11. Thermoelectric properties of Ca(1-x-y)Dy(x)CeyMnO3 for power generation.

    PubMed

    Park, K; Lee, G W; Jung, J; Kim, S-J; Lim, Y-S; Choi, S-M; Seo, W-S

    2011-08-01

    The sintered Ca(1-x-y)Dy(x)CeyMnO3 bodies were a single phase with a perovskite structure without any impurity phases. The calculated crystallite sizes of the Ca(1-x-y)Dy(x)CeyMnO3 were in the range of 43.3 to 63.3 nm. The composition significantly affected their microstructural and thermoelectric characteristics. The doped Dy led to both an increase in the electrical conductivity as well as the absolute value of the Seebeck coefficient, resulting in an enhanced power factor. The highest power factor (5.1 x 10(-4) Wm(-1) K(-2)) was obtained for Ca(0.8)Dy(0.2)MnO3 at 800 degrees C. In this study, we systematically discussed the thermoelectric properties of the Ca(1-x-y)Dy(x)CeyMnO3, with respect to the substitution of Dy and/or Ce for Ca.

  12. A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

    NASA Technical Reports Server (NTRS)

    VanKeuls, F. W.; Mueller, C. H.; Romanofsky, R. R.; Warner, J. D.; Miranda, F. A.; Jiang, H.

    2002-01-01

    Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

  13. Composition dependence of charge and magnetic length scales in mixed valence manganite thin films

    PubMed Central

    Singh, Surendra; Freeland, J. W.; Fitzsimmons, M. R.; Jeen, H.; Biswas, A.

    2016-01-01

    Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1−yPry)1−xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1−xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties. PMID:27461993

  14. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

    PubMed

    Plassmeyer, Paul N; Archila, Kevin; Wager, John F; Page, Catherine J

    2015-01-28

    Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Annealing temperatures ≥500 °C result in thin films with low leakage-current densities (∼1 × 10(-8) A·cm(-2)) and dielectric constants ranging from 11.0 to 11.5. When incorporated as the gate dielectric layer in a-IGZO thin-film transistors (TFTs), LaAlO3 thin films annealed at 600 °C in air yielded TFTs with relatively low average mobilities (∼4.5 cm(2)·V(-1)·s(-1)) and high turn-on voltages (∼26 V). Interestingly, reannealing the LaAlO3 in 5%H2/95%N2 at 300 °C before deposition of a-IGZO channel layers resulted in TFTs with increased average mobilities (11.1 cm(2)·V(-1)·s(-1)) and lower turn-on voltages (∼6 V).

  15. Synthesis and characterization of ZnO thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Anilkumar, T. S., E-mail: anil24march@gmail.com; Girija, M. L., E-mail: girija.ml.grt1@gmail.com; Venkatesh, J., E-mail: phph9502@yahoo.com

    2016-05-06

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivitymore » of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.« less

  16. Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shiraishi, Takahisa; Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577; Katayama, Kiliha

    2016-06-27

    To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films were deposited on (111)Pt-coated SiO{sub 2}, Si, and CaF{sub 2} substrates with thermal expansion coefficients of 0.47, 4.5, and 22 × 10{sup −6}/ °C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films deposited on SiO{sub 2} and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF{sub 2} substrates were under in-plane compressive strain, and their volume fraction of monoclinic phasemore » was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 μC/cm{sup 2} was observed for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}, while ferroelectricity was barely observable for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}/CaF{sub 2}. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films.« less

  17. Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Beekman, C.; Siemons, W.; Chi, M.

    2016-05-23

    Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO 3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO 3 (R' and T') in thin films grown on LaAlO 3 substrates with slightly different La 0.3Sr 0.7MnO 3 buffer layers. Our study shows that the polarizationmore » state formed during the growth acts as “imprint” on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. We observed reduction of the monoclinic domain size and found that it was largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below T c). Finally, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains.« less

  18. Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

    NASA Astrophysics Data System (ADS)

    Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

    2016-12-01

    Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

  19. Misfit layered Ca{sub 3}Co{sub 4}O{sub 9} as a high figure of merit p-type transparent conducting oxide film through solution processing

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aksit, M.; Kolli, S. K.; Slauch, I. M.

    Ca{sub 3}Co{sub 4}O{sub 9} thin films synthesized through solution processing are shown to be high-performing, p-type transparent conducting oxides (TCOs). The synthesis method is a cost-effective and scalable process that consists of sol-gel chemistry, spin coating, and heat treatments. The process parameters can be varied to produce TCO thin films with sheet resistance as low as 5.7 kΩ/sq (ρ ≈ 57 mΩ cm) or with average visible range transparency as high as 67%. The most conductive Ca{sub 3}Co{sub 4}O{sub 9} TCO thin film has near infrared region optical transmission as high as 85%. The figure of merit (FOM) for the top-performing Ca{sub 3}Co{submore » 4}O{sub 9} thin film (151 MΩ{sup −1}) is higher than FOM values reported in the literature for all other solution processed, p-type TCO thin films and higher than most others prepared by physical vapor deposition and chemical vapor deposition. Transparent conductivity in misfit layered oxides presents new opportunities for TCO compositions.« less

  20. Cr:SnO2 thin films-synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Varghese, Anitta Rose; B. Bhadrapriya, C.; Amarendra, G.; Hussain, Shamima

    2018-04-01

    Thin films of pure and Chromium doped SnO2 were synthesized using sol-gel method by spin coating technique. XRD studies confirmed the formation of tetragonal structure for SnO2 thin films. Variations in peak width and position were identified with doping. The optical band gap of the undoped films was found to be 3.8eV and varied with doping. Raman spectrum gave signature peaks of Sn-O and Cr-O bonds for undoped and doped films. The uniformity of the samples and formation of aggregates were observed from FESEM analysis.

  1. Synthesis and annealing study of RF sputtered ZnO thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

    2016-05-23

    In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

  2. Electrical conduction mechanism and dielectric characterization of MnTPPCl thin films

    NASA Astrophysics Data System (ADS)

    Meikhail, M. S.; Oraby, A. H.; El-Nahass, M. M.; Zeyada, H. M.; Al-Muntaser, A. A.

    2018-06-01

    The AC conductivity and dielectric properties of MnTPPCl sandwich structure as Au/MnTPPCl/Au were studied. The conductivity of the MnTPPCl thin films have been interpreted by the correlated barrier hopping (CBH) model. The dominant conduction process have found to be the single polaron hopping conduction. The values of the hopping distance, Rω, barrier height, W, and the localized-state density, N, are estimated at different frequencies. The behavior of dielectric constant and dielectric loss was discussed as a function of temperature and frequency. The dielectric constant was described in terms of polarization mechanism in materials. The spectral behavior of dielectric loss is interpreted on the basis of the Giuntini et al. model [1]. The value of WM is obtained as 0.32 eV. A non-Debye relaxation phenomenon was observed from the dielectric relaxation mechanism.

  3. Ultrafast photo-induced hidden phases in strained manganite thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Jingdi; McLeod, A. S.; Zhang, Gu-Feng; Stoica, Vladimir; Jin, Feng; Gu, Mingqiang; Gopalan, Venkatraman; Freeland, John W.; Wu, Wenbin; Rondinelli, James; Wen, Haidan; Basov, D. N.; Averitt, R. D.

    Correlated transition metal oxides (TMOs) are particularly sensitive to external control because of energy degeneracy in a complex energy landscape that promote a plethora of metastable states. However, it remains a grand challenge to actively control and fully explore the rich landscape of TMOs. Dynamic control with pulsed photons can overcome energetic barriers, enabling access to transient or metastable states that are not thermally accessible. In the past, we have demonstrated that mode-selective single-laser-pulse excitation of a strained manganite thin film La2/3Ca1/3MnO3 initiates a persistent phase transition from an emergent antiferromagnetic insulating ground state to a ferromagnetic metallic metastable state. Beyond the photo-induced insulator to metal transition, we recently discovered a new peculiar photo-induced hidden phase, identified by an experimental approach that combines ultrafast pump-probe spectroscopy, THz spectroscopy, X-ray diffraction, cryogenic near-field spectroscopy and SHG probe. This work is funded by the DOE, Office of Science, Office of Basic Energy Science under Award Numbers DE-SC0012375 and DE-SC0012592.

  4. Room temperature ferrimagnetism and ferroelectricity in strained, thin films of BiFe 0.5Mn 0.5O 3

    DOE PAGES

    Choi, Eun -Mi; Fix, Thomas; Kursumovic, Ahmed; ...

    2014-10-14

    In this study, highly strained films of BiFe 0.5Mn 0.5O 3 (BFMO) grown at very low rates by pulsed laser deposition were demonstrated to exhibit both ferrimagnetism and ferroelectricity at room temperature and above. Magnetization measurements demonstrated ferrimagnetism (T C ~ 600K), with a room temperature saturation moment (M S) of up to 90 emu/cc (~0.58μ B/f.u) on high quality (001) SrTiO 3. X-ray magnetic circular dichroism showed that the ferrimagnetism arose from antiferromagnetically coupled Fe 3+ and Mn 3+ . While scanning transmission electron microscope studies showed there was no long range ordering of Fe and Mn, the magneticmore » properties were found to be strongly dependent on the strain state in the films. The magnetism is explained to arise from one of three possible mechanisms with Bi polarization playing a key role. A signature of room temperature ferroelectricity in the films was measured by piezoresponse force microscopy and was confirmed using angular dark field scanning transmission electron microscopy. The demonstration of strain induced, high temperature multiferroism is a promising development for future spintronic and memory applications at room temperature and above.« less

  5. Thin-film nano-thermogravimetry applied to praseodymium-cerium oxide films at high temperatures

    NASA Astrophysics Data System (ADS)

    Schröder, Sebastian; Fritze, Holger; Bishop, Sean; Chen, Di; Tuller, Harry L.

    2018-05-01

    High precision measurements of oxygen nonstoichiometry δ in thin film metal oxides MaOb±δ at elevated temperatures and controlled oxygen partial pressures pO2 are reported with the aid of resonant microbalances. The resonant microbalances applied here consisted of y-cut langasite (La3Ga5SiO14) and CTGS (Ca3TaGa3Si2O14) piezoelectric resonators, operated in the thickness shear mode at ˜5 MHz. Measurements of variations in δ of Pr0.1Ce0.9O2-δ (PCO) films are reported for the oxygen partial pressure range from 10-8 bar to 0.2 bar at 700 °C, and these results were found to be in good agreement with previously reported oxygen nonstoichiometry δ data derived from chemical capacitance studies. The PCO thin-films were deposited via pulsed laser deposition on both sides of the resonators, whose series resonance frequency was tracked, converted into mass changes and, finally, into nonstoichiometry. The nonstoichiometry was observed to reach a plateau as the oxygen partial pressure dropped below about 10-5 bar, the behavior being attributed to the full reduction of Pr to the trivalent state. These resonators enable stable operation up to temperatures above 1000 °C, thereby maintaining high mass resolution suitable for determining oxygen nonstoichiometry variations in thin films deposited on such resonators. For the given experimental conditions, a mass resolution of ˜50 ng was achieved at 700 °C with the CTGS resonator.

  6. All-Ceramic Thin Film Battery

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    BOYLE, TIMOTHY J.; INGERSOLL, DAVID; CYGAN, RANDALL T.

    2002-11-01

    We have undertaken the synthesis of a thin film ''All Ceramic Battery'' (ACB) using solution route processes. Based on the literature and experimental results, we selected SnO{sub 2}, LiCoO{sub 2}, and LiLaTiO{sub 3} (LLT) as the anode, cathode, and electrolyte, respectively. Strain induced by lattice mismatch between the cathode and bottom electrode, as estimated by computational calculations, indicate that thin film orientations for batteries when thicknesses are as low as 500 {angstrom} are strongly controlled by surface energies. Therefore, we chose platinized silicon as the basal platform based on our previous experience with this material. The anode thin films weremore » generated by standard spin-cast methods and processing using a solution of [Sn(ONep)]{sub 8} and HOAc which was found to form Sn{sub 6}(O){sub 4}(ONep){sub 4}. Electrochemical evaluation showed that the SnO{sub 2} was converted to Sn{sup o} during the first cycle. The cathode was also prepared by spin coating using the novel [Li(ONep)]{sub 8} and Co(OAc){sub 2}. The films could be electrochemically cycled (i.e., charged/discharged), with all of the associated structural changes being observable by XRD. Computational models indicated that the LLT electrolyte would be the best available ceramic material for use as the electrolyte. The LLT was synthesized from [Li(ONep)]{sub 8}, [Ti(ONep){sub 4}]{sub 2}, and La(DIP){sub 3}(py){sub 3} with RTP processing at 900 C being necessary to form the perovskite phase. Alternatively, a novel route to thin films of the block co-polymer ORMOLYTE was developed. The integration of these components was undertaken with each part of the assembly being identifiably by XRD analysis (this will allow us to follow the progress of the charge/discharge cycles of the battery during use). SEM investigations revealed the films were continuous with minimal mixing. All initial testing of the thin-film cathode/electrolyte/anode ACB devices revealed electrical shorting

  7. L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM Applications

    NASA Astrophysics Data System (ADS)

    Huang, Efrem Yuan-Fu

    The objective of the research conducted herein was to develop L10-ordered materials and thin film stack structures with high perpendicular magnetic anisotropy (PMA) for spin-transfertorque magnetoresistive random access memory (STT-MRAM) applications. A systematic approach was taken in this dissertation, culminating in exchange coupled L1 0-FePt and L10- MnAl heterogeneous structures showing great promise for developing perpendicular magnetic tunnel junctions (pMTJs) with both high thermal stability and low critical switching current. First, using MgO underlayers on Si substrates, sputtered MnAl films were systematically optimized, ultimately producing a Si substrate/MgO (20 nm)/MnAl (30)/Ta (5) film stack with a high degree of ordering and large PMA. Next, noting the incompatibility of insulating MgO underlayers with industrial-scale CMOS processes, attention was turned to using conductive underlayers. TiN was found to excel at promoting growth of L10-MnAl, with optimized films showing improved magnetic properties over those fabricated on MgO underlayers. The use of different post-annealing processes was then studied as an alternative to in situ annealing. Rapid thermal annealing (RTA) was found to produce PMA in films at lower annealing temperatures than tube furnace annealing, but tube furnace annealing produced films with higher maximum PMA than RTA. While annealed samples had lower surface roughness than those ordered by high in situ deposition temperatures, relying solely on annealing to achieve L10-ordering resulted drastically reduced PMA. Finally, heterogeneous L10-ordered FePt/MgO/MnAl film stacks were explored for pMTJs. Film stacks with MgO barrier layers thinner than 2 nm showed significant interdiffusion between the FePt and MnAl, while film stacks with thicker MgO barrier layers exhibited good ordering and high PMA in both the FePt and MnAl films. It is believed that this limitation is caused by the roughness of the underlying FePt, which was thicker

  8. Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films

    DOE PAGES

    Singh, Surendra; Freeland, J. W.; Fitzsimmons, Michael R.; ...

    2016-07-27

    Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La 1-yPr y) 1-xCaxMnO 3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La 0.4Pr 0.6) 1-xCaxMnO3 films with x = 0.33 and 0.375, across themore » MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.« less

  9. Nanoscale modulations in (KLa)(CaW)O-6 and (NaLa)(CaW)O-6

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Licurse, Mark; Borisevich, Albina Y; Davies, Peter

    2012-01-01

    Complex nanoscale modulations are identified in two new A-site ordered perovskites, (KLa)(CaW)O{sub 6} and (NaLa)(CaW)O{sub 6}. In (KLa)(CaW)O{sub 6}, selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM) show an incommensurate nanocheckerboard modulation with {approx}9.4 x 9.4 a{sub p} periodicity (a{sub p} {approx} 4 {angstrom} for the cubic perovskite aristotype). For (NaLa)(CaW)O{sub 6} a one-dimensional modulation is observed with a {approx}16(1 1 0)a{sub p} repeat; the <1 1 0> orientation of the nanostripes is different from the <1 0 0> stripes observed in other mixed A-site systems. Studies using high temperature x-ray diffraction suggest the formation of the complexmore » modulations is associated with small deviations from the ideal 1:1:1:1 stoichiometry of the (A{sup +}La{sup 3+})(CaW)O{sub 6} phases. Z-contrast images acquired on an aberration-corrected microscope provide evidence for deviations from stoichiometry with a {approx}1:15 periodic arrangement of La{sub 4/3}(CaW)O{sub 6}:(NaLa)(CaW)O{sub 6} nano-phases.« less

  10. Ferromagnetism enhanced by structural relaxation of biaxially compressed LaCoO3 films

    NASA Astrophysics Data System (ADS)

    Mehta, Virat; Suzuki, Yuri

    2011-04-01

    Epitaxial LaCoO3 films were synthesized on LaAlO3 substrates to explore the role of epitaxial strain and structure on the ferromagnetism observed in these biaxially compressed films. Coherent strain and tetragonal structure were only achieved in thin film samples grown using higher energy densities. The strain relaxed with increasing thickness and was accompanied by increasing mosaic spread. Higher magnetization values were consistently seen in fully relaxed films grown using lower laser energy density. These results suggest that epitaxial strain is not the only factor determining the ferromagnetism and that the microstructure and defects may play a significant role.

  11. One-pot electrospinning and gas-sensing properties of LaMnO3 perovskite/SnO2 heterojunction nanofibers

    NASA Astrophysics Data System (ADS)

    Chen, Dongdong; Yi, Jianxin

    2018-03-01

    Using nanostructured composite materials is an effective way to obtain high-performance gas sensors. This work used p-type LaMnO3 perovskite-structured semiconductor as a novel promoter for SnO2 nanofibers and studied the gas-sensing characteristics. Nanofibers of 0-2.5-mol% LaMnO3/SnO2 were synthesized via one-pot electrospinning. Compared with pristine SnO2, LaMnO3/SnO2 composite nanofibers exhibited smaller particle size (10-30 nm) and higher BET surface area. XPS revealed that oxygen surface absorption decreased with increasing LaMnO3 content. 0.3-mol% LaMnO3/SnO2 exhibited significantly enhanced ethanol sensitivity relative to pristine SnO2. A response of 20 was obtained at the optimum temperature of 260 °C for 100-ppm ethanol. Higher LaMnO3 loading led to decrease of the ethanol response. The impact of LaMnO3 loading on the sensing behavior of SnO2 nanofibers was discussed in terms of p-n heterojunction formation and changes in the microstructure and catalytic properties.

  12. Sb:SnO2 thin films-synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

    2018-04-01

    Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

  13. Nanoscale Mechanical Properties of Nanoindented Ni48.8Mn27.2Ga24 Ferromagnetic Shape Memory Thin Film

    PubMed Central

    Fu, Xiaofei; Li, Xianli; Lv, Jingwei; Wang, Famei; Wang, Liying

    2017-01-01

    The structure and nanoscale mechanical properties of Ni48.8Mn27.2Ga24 thin film fabricated by DC magnetron sputtering are investigated systematically. The thin film has the austenite state at room temperature with the L21 Hesuler structure. During nanoindentation, stress-induced martensitic transformation occurs on the nanoscale for the film annealed at 823 K for 1 hour and the shape recovery ratio is up to 85.3%. The associated mechanism is discussed. PMID:29109812

  14. Electronic band structure of LaCoO3/Y/Mn compounds

    NASA Astrophysics Data System (ADS)

    Rahnamaye Aliabad, H. A.; Hesam, V.; Ahmad, Iftikhar; Khan, Imad

    2013-02-01

    Spin polarization effects on electronic properties of pure LaCoO3 and doped compounds (La0.5Y0.5CoO3, LaCo0.5Mn0.5O3) in the rhombohedral phase have been studied. We have employed the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA+U) under density functional theory (DFT). The calculated band structures along with total as well as partial densities of states reveal that Y and Mn impurities have a significant effect on the structural and electronic properties of LaCoO3. It is found that Mn alters insulating behavior of this compound to the half metallic for spin up state. Obtained results show that the magnetic moment for the Co-3d state is near 3.12μB in LaCoO3 compound which increases and decreases with addition of Y and Mn dopants respectively.

  15. Strain tuning of electronic structure in Bi 4Ti 3O 12-LaCoO 3 epitaxial thin films

    DOE PAGES

    Choi, Woo Seok; Lee, Ho Nyung

    2015-05-08

    In this study, we investigated the crystal and electronic structures of ferroelectric Bi 4Ti 3O 12 single-crystalline thin films site-specifically substituted with LaCoO 3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO 3 and SrTiO 3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3dmore » states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t 2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.« less

  16. Nanoscale control of stripe-ordered magnetic domain walls by vertical spin transfer torque in La0.67Sr0.33MnO3 film

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing

    2018-02-01

    Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.

  17. Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders

    DOEpatents

    Boyle, Timothy J.

    1999-01-01

    A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

  18. Enhanced ultraviolet photo-response in Dy doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

    2018-02-01

    In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

  19. Electrochemical and physical properties of electroplated CuO thin films.

    PubMed

    Dhanasekaran, V; Mahalingam, T

    2013-01-01

    Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

  20. Thermoelectric Properties of Al-Doped ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

    2014-06-01

    We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

  1. Temperature dependence of superfluid density in YBa 2Cu 3O 7- δ and Y 0.7Ca 0.3Ba 2Cu 3O 7- δ thin films: A doping dependence study of the linear slope

    NASA Astrophysics Data System (ADS)

    Lai, L. S.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.

    2005-11-01

    By using a microstrip ring resonator to measure the temperature dependence of the in-plane magnetic penetration depth λ(T) in YBa2Cu3O7-δ (YBCO) and Y0.7Ca0.3Ba2Cu3O7-δ (Ca-YBCO) epitaxially grown thin films, the linear temperature dependence of the superfluid density ρs/m∗ ≡ 1/λ2(T) was observed from the under- to the overdoped regime at the temperatures below T/Tc ≈ 0.3 . For the underdoped regime of YBCO and Ca-YBCO thin films, the magnitude of the slope d(1/λ2(T))/dT is insensitive to doping, and it can be treated in the framework of projected d-density-wave model. Combining these slope values with the thermal conductivity measurements, the Fermi-liquid correction factor α2 from the Fermi-liquid model, suggested by Wen and Lee, was revealed here with various doping levels.

  2. Temperature-Dependent Lithium-Ion Diffusion and Activation Energy of Li1.2Co0.13Ni0.13Mn0.54O2 Thin-Film Cathode at Nanoscale by Using Electrochemical Strain Microscopy.

    PubMed

    Yang, Shan; Yan, Binggong; Wu, Jiaxiong; Lu, Li; Zeng, Kaiyang

    2017-04-26

    This paper presents the in situ mapping of temperature-dependent lithium-ion diffusion at the nanometer level in thin film Li 1.2 Co 0.13 Ni 0.13 Mn 0.54 O 2 cathode using electrochemical strain microscopy. The thin-film Li 1.2 Co 0.13 Ni 0.13 Mn 0.54 O 2 cathode exhibits higher lithium-ion diffusivities with increasing temperature, which explains the higher capacity observed in the lithium-ion batteries with a Li-rich cathode at elevated temperature. In addition, the activation energy for lithium-ion diffusion can be extracted in an Arrhenius-type plot at the level of grain structure with the assumption that the ionic movement is diffusion controlled. Compared with the grain interiors, the grain boundaries show relatively lower activation energy; hence, it is the preferred diffusion path for lithium ions. This study has bridged the gap between atomistic calculations and traditional macroscopic experiments, showing direct evidence as well as mechanisms for ionic diffusion for Li-rich cathode material.

  3. Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

    NASA Astrophysics Data System (ADS)

    Hannachi, Amira; Maghraoui-Meherzi, Hager

    2017-03-01

    Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like.

  4. Mendigite, Mn2Mn2MnCa(Si3O9)2, a new mineral species of the bustamite group from the Eifel volcanic region, Germany

    NASA Astrophysics Data System (ADS)

    Chukanov, N. V.; Aksenov, S. M.; Rastsvetaeva, R. K.; Van, K. V.; Belakovskiy, D. I.; Pekov, I. V.; Gurzhiy, V. V.; Schüller, W.; Ternes, B.

    2015-12-01

    A new mineral, mendigite (IMA no. 2014-007), isostructural with bustamite, has been found in the In den Dellen pumice quarry near Mendig, Laacher Lake area, Eifel Mountains, Rhineland-Palatinate (Rheinland-Pfalz), Germany. Associated minerals are sanidine, nosean, rhodonite, tephroite, magnetite, and a pyrochlore-group mineral. Mendigite occurs as clusters of long-prismatic crystals (up to 0.1 × 0.2 × 2.5 mm in size) in cavities within sanidinite. The color is dark brown with a brown streak. Perfect cleavage is parallel to (001). D calc = 3.56 g/cm3. The IR spectrum shows the absence of H2O and OH groups. Mendigite is biaxial (-), α = 1.722 (calc), β = 1.782(5), γ = 1.796(5), 2 V meas = 50(10)°. The chemical composition (electron microprobe, mean of 4 point analyses, the Mn2+/Mn3+ ratio determined from structural data and charge-balance constraints) is as follows (wt %): 0.36 MgO, 10.78 CaO, 37.47 MnO, 2.91 Mn2O3, 4.42 Fe2O3, 1.08 Al2O3, 43.80 SiO2, total 100.82. The empirical formula is Mn2.00(Mn1.33Ca0.67) (Mn0.50 2+ Mn0.28 3+ Fe0.15 3+ Mg0.07)(Ca0.80 (Mn0.20 2+)(Si5.57 Fe0.27 3+ Al0.16O18). The idealized formula is Mn2Mn2MnCa(Si3O9)2. The crystal structure has been refined for a single crystal. Mendigite is triclinic, space group Pbar 1; the unit-cell parameters are a = 7.0993(4), b = 7.6370(5), c = 7.7037(4) Å, α = 79.58(1)°, β = 62.62(1)°, γ = 76.47(1)°; V = 359.29(4) Å3, Z = 1. The strongest reflections on the X-ray powder diffraction pattern [ d, Å ( I, %) ( hkl)] are: 3.72 (32) (020), 3.40 (20) (002, 021), 3.199 (25) (012), 3.000 (26), (01bar 2, 1bar 20), 2.885 (100) (221, 2bar 11, 1bar 21), 2.691 (21) (222, 2bar 10), 2.397 (21) (02bar 2, 21bar 1, 203, 031), 1.774 (37) (412, 3bar 21). The type specimen is deposited in the Fersman Mineralogical Museum, Russian Academy of Sciences, Moscow, registration number 4420/1.

  5. Composition spread studies of Nd1-xLaxNiO3 combinatorial thin films

    NASA Astrophysics Data System (ADS)

    Suchoski, Richard; Jin, Kui; Yasui, Shintaro; Greene, Richard; Takeuchi, Ichiro

    2013-03-01

    Rare earth nickelates have attracted a great deal of attention in recent years due to a host of interesting features, one being a transition from paramagnetic metal to antiferromagnetic insulator through distortions from the ideal perovskite unit cell. This metal-to-insulator transition (MIT) can be manipulated by modifying variables such as temperature, rare earth ion size, oxygen content, or stress from lattice-mismatched epitaxial thin film growth. Research on this family has been extensive, though there still exists an absence of thin film studies focusing on intermediate compositions. We have fabricated epitaxial thin film composition spreads of Nd1-xLaxNiO3 grown via combinatorial PLD to investigate these transitional compositions. While our films exhibit a smooth composition progression, we observe a composition threshold where orthorhombic NdNiO3 transforms to rhombohedral LaNiO3, correlating with disappearance of the MIT, and displays a non-Vegard evolution of the film's in-plane lattice constant in HRXRD and Raman scattering data of the A1g rotational mode. This work was performed at the Center for Nanophysics and Advanced Materials (CNAM) at UMD, and supported by AFO SR MURI Grant #FA95500910603.

  6. Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com

    2016-05-23

    Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively.more » At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.« less

  7. Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

    NASA Astrophysics Data System (ADS)

    Kumar, S. Vinodh; Raja, M. Manivel; Pandi, R. Senthur; Pandyan, R. Kodi; Mahendran, M.

    2016-05-01

    Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L12 cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

  8. Influence of Oxygen Content in Oriented LaCoO3-δ Thin Films: Probed by X-ray diffraction and Raman Spectroscopy

    NASA Astrophysics Data System (ADS)

    Mishra, D. K.; Ahlawat, Anju; Sathe, V. G.

    2011-07-01

    Nonstoichiometric oriented thin films of LaCoO3-δ of equal thickness and varying oxygen content has been deposited on STO (001) substrate by pulsed laser deposition. X-ray diffraction results show that all films are single phase and c-axis oriented in the (001) direction with in plane tensile strain. In these films strain reduces with increasing oxygen content and Raman study also support this result. Low temperature Raman study shows no change in spin state of Co3+ in temperature range from 300 K to down to 80 K.

  9. Investigations on rectifying behavior of Y{sub 0.95}Ca{sub 0.05}MnO{sub 3}/Si junction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dhruv, Davit; V.V.P. Engineering College, Gujarat Technological University, Rajkot – 360 005; Joshi, Zalak

    2016-05-06

    In this communication, we report the rectifying properties observed across the junction, consists of Ca{sup +2} doped hexagonal YMnO{sub 3} manganite film, grown on n-type (100) Si single crystalline substrate. The junction was grown using cost effective chemical solution deposition (CSD) technique by employing spin coating method. Surface morphology of Y{sub 0.9}5Ca{sub 0.05}MnO{sub 3}/Si (YCMO/Si) film was carried out by atomic force microscopy and magnetic response of film was studied by magnetic force microscopy. Current – voltage characteristics of the junction was carried out by using Keithley source meter in current perpendicular to plane (CPP) mode at different temperatures. Rectificationmore » in I – V behavior has been observed for the junction at all the temperatures studied. With increase in temperature, rectification ratio, in the range of 10{sup 4}, increases across the junction. Results have been discussed in the context of thermal effects.« less

  10. Apparent volume dependence of 1/f noise in thin film structures: role of contacts.

    PubMed

    Barone, C; Pagano, S; Méchin, L; Routoure, J-M; Orgiani, P; Maritato, L

    2008-05-01

    The experimental investigation of low-frequency noise properties in new materials is very useful for the understanding of the involved physical transport mechanisms. In this paper it is shown that, when contact noise is present, the experimental values of the normalized Hooge parameter show a fictitious linear dependence on the volume of the analyzed samples. Experimental data on noise measurements of La0.7Sr0.3MnO3 thin films are reported to demonstrate the validity of the analysis performed.

  11. Narrow-band tunable terahertz emission from ferrimagnetic Mn{sub 3-x}Ga thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Awari, N.; University of Groningen, 9747 AG Groningen; Kovalev, S., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie

    2016-07-18

    Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn{sub 3-x}Ga Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

  12. Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

    NASA Astrophysics Data System (ADS)

    Yuan, Feifei; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina; Hühne, Ruben; Schultz, Ludwig; Shi, Zhixiang

    2015-06-01

    FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc(θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc(θ) peaks for H||c were observed in films on CaF2 and LaAlO3. Jc(θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau approach with appropriate anisotropy ratio γJ. The scaling parameter γJ is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates.

  13. Electronic and magnetic ordering induced by Mo- and Ru doping of the Mn site in CaMnO3 perovskite: EMR probing

    NASA Astrophysics Data System (ADS)

    Shames, A. I.; Auslender, M.; Rozenberg, E.; Gorodetsky, G.; Martin, C.; Maignan, A.

    2005-05-01

    X-band electron magnetic-resonance (EMR) measurements of polycrystalline CaMn1-yMoyO3 (0⩽y ⩽0.14) samples were performed at 120K⩽T⩽540K. The data obtained are compared with those of another electron-doped manganite system, CaMn1-xRuxO3 (0⩽x ⩽0.40). The observed anomalies of the EMR parameters correlate pretty well with the temperatures of antiferro-, ferromagneticlike, and orbital/charge-ordering transitions in these systems. However, a strong difference is observed between the resonant properties of Mo- and Ru doped series at both paramagnetic (PM) and magnetically ordered states. To describe such a difference, the energy-band diagrams, which comprise the deep impurity t2g-like states +eg-like conductive band for CaMn1-xRuxO3 and shallow impurity states+conductive band, both having eg-like symmetry, for CaMn1-yMoyO3, are proposed. Specific electrons' contribution to the EMR linewidth at PM temperatures is introduced for the considered systems.

  14. Impact of nanostructured thin ZnO film in ultraviolet protection.

    PubMed

    Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

    2017-01-01

    Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field.

  15. Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 thin films derived at low temperature

    NASA Astrophysics Data System (ADS)

    Zhu, Hanfei; Ma, Hongfang; Zhao, Yuyao

    2018-05-01

    Highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.15, y = 0.05; x = 0.1, y = 0.1; x = 0.05, y = 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450 °C via a sol-gel route. It was found that all the (Pb1-x-yLaxCay)Ti1-x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.1, y = 0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan ⁡ δ < 0.08) and leakage current (J ∼ 4.6 ×10-5 A/cm2), a high recoverable energy density (Wre ∼ 15 J/cm3), as well as a large pyroelectric coefficient (p ∼ 190 μC/m2K) and figure of merit (Fd‧∼ 77 μC /m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.

  16. Transparent Al+3 doped MgO thin films for functional applications

    NASA Astrophysics Data System (ADS)

    Maiti, Payel; Sekhar Das, Pradip; Bhattacharya, Manjima; Mukherjee, Smita; Saha, Biswajit; Mullick, Awadesh Kumar; Mukhopadhyay, Anoop Kumar

    2017-08-01

    The present work reports the utilization of a relatively simple, cost effective sol-gel technique based route to synthesize highly transparent, spin coated 4.1 at% Al+3 doped MgO thin films on quartz substrates. The films were characterized by XRD, XPS, Raman spectroscopy, and SIMS techniques. The microstructures were characterized by FESEM and TEM while the nanomechanical properties were assessed by the nanoindentation technique. Finally the optical transmittance was measured by UV-vis technique. The x-ray diffraction (XRD) study suggests the crystal facet (2 0 0) of MgO lattice to be distorted after incorporation of Al+3 into MgO lattice. From FESEM the doped films were found to have a dense microstructure with a crystallite size of about 20 nm as revealed by the TEM studies. Nanoindentation measurements indicated drastic increase of elastic modulus for the Al+3 doped MgO thin films by ~73% compared to that of the pristine MgO thin films along with retaining the nanohardness at ~8 GPa. The transmittance of Al+3 doped MgO thin films in the visible range was significantly higher (~99%) than that of pristine MgO (~90%) thin films. The films also had a relatively higher refractive index of about 1.45 as evaluated from the optical properties. The enhanced transmittance as well as the improved elastic modulus of Al+3 doped MgO thin films suggest its promising candidature in magnetic memory devices and as buffer layers of solar cells.

  17. Cross-plane thermoelectric transport in p-type La0.67Sr0.33MnO3/LaMnO3 oxide metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Jha, Pankaj; Sands, Timothy D.; Jackson, Philip; Bomberger, Cory; Favaloro, Tela; Hodson, Stephen; Zide, Joshua; Xu, Xianfan; Shakouri, Ali

    2013-05-01

    The cross-plane thermoelectric transport properties of La0.67Sr0.33MnO3 (LSMO)/LaMnO3 (LMO) oxide metal/semiconductor superlattices were investigated. The LSMO and LMO thin-film depositions were performed using pulsed laser deposition to achieve low resistivity constituent materials for LSMO/LMO superlattice heterostructures on (100)-strontium titanate substrates. X-ray diffraction and high-resolution reciprocal space mapping indicate that the superlattices are epitaxial and pseudomorphic. Cross-plane devices were fabricated by etching cylindrical pillar structures in superlattices using inductively, this coupled-plasma reactive-ion etching. The cross-plane electrical conductivity data for LSMO/LMO superlattices reveal a lowering of the effective barrier height to 223 meV as well as an increase in cross-plane conductivity by an order of magnitude compared to high resistivity superlattices. These results suggest that controlling the oxygen deficiency in the constituent materials enables modification of the effective barrier height and increases the cross-plane conductivity in oxide superlattices. The cross-plane LSMO/LMO superlattices showed a giant Seebeck coefficient of 2560 μV/K at 300 K that increases to 16 640 μV/K at 360 K. The giant increase in the Seebeck coefficient with temperature may include a collective contribution from the interplay of charge, spin current, and phonon drag. The low resistance oxide superlattices exhibited a room temperature cross-plane thermal conductivity of 0.92 W/m K, this indicating that the suppression of thermal conductivities due to the interfaces is preserved in both low and high resistivity superlattices. The high Seebeck coefficient, the order of magnitude improvement in cross-plane conductivity, and the low thermal conductivity in LSMO/LMO superlattices resulted in a two order of magnitude increase in cross-plane power factor and thermoelectric figure of merit (ZT), compared to the properties of superlattices with higher

  18. Magnetic dynamic properties of electron-doped La(0.23)Ca(0.77)MnO3 nanoparticles.

    PubMed

    Dolgin, B; Puzniak, R; Mogilyansky, D; Wisniewski, A; Markovich, V; Jung, G

    2013-02-20

    Magnetic properties of basically antiferromagnetic La(0.23)Ca(0.77)MnO(3) particles with average sizes of 12 and 60 nm have been investigated in a wide range of magnetic fields and temperature. Particular attention has been paid to magnetization dynamics through measurements of the temperature dependence of ac-susceptibility at various frequencies, the temperature and field dependence of thermoremanent and isothermoremanent magnetization originating from nanoparticles shells, and the time decay of the remanent magnetization. Experimental results and their analysis reveal the major role in magnetic behaviour of investigated antiferromagnetic nanoparticles played by the glassy component, associated mainly with the formation of the collective state formed by ferromagnetic clusters in frustrated coordination at the surfaces of interacting antiferromagnetic nanoparticles. Magnetic behaviour of nanoparticles has been ascribed to a core-shell scenario. Magnetic transitions have been found to play an important role in determining the dynamic properties of the phase separated state of coexisting different magnetic phases.

  19. Engineering Electronic Properties of Strongly Correlated Metal Thin Films

    NASA Astrophysics Data System (ADS)

    Eaton, Craig

    residual resistivity ration complex vanadate thin films have been demonstrated. Methods for growing minimally strained SrVO3 films on (LaAlO 3)0.3(Sr2AlTaO6)0.7 substrates (0.7% tensile) were expanded to other substrates with different lattice mismatches, namely SrTiO3 (1.8% tensile) and LaAlO3 (1.3% compressive). Varying strain modifies bond angles or overlap, and can give rise to an insulating ground state. Changes in the film surface morphology derived from atomic force microscopy (AFM) was used to discriminate optimal growth conditions on each substrate. Films grown at each strain state remain strongly metallic at 10 nm thickness. Low temperature resistivity measurements, which demonstrates a marked increase in low temperature resistivity with respect to those films grown at optimized growth parameters, were found to be substrate dependent. The thickness of films grown on SrTiO3 are optimized for maximum thickness without cracking. Use of epitaxial strain as a mechanism for enabling a Mott transition was not demonstrated at strains and conditions attempted within this study. The experimental support of this hypothesis could not be experimentally confirmed within the range of strains studied here. Finally, high quality epitaxial SrTiO3-SrVO3-SrTiO 3 heterostructures are grown on (LaAlO3)0.3(Sr 2AlTaO6)0.7 substrates by hybrid MBE. RHEED, XRD, and TEM showed that these structures are of high structural quality, with atomically and chemically abrupt interfaces. By fixing the thickness of the SrTiO3 confinement layers to be 15 nm and decreasing the thickness of the SrVO3 from 50 nm down to 1.2 nm, it has been demonstrated that the system transitions from a strongly-correlated metal to an insulating state, as shown by temperature dependent resistivity and carrier concentration measurements. For films with thickness larger than 1.2 nm, the resistivity versus temperature is described by Fermi liquid behavior. Below this critical thickness the material undergoes an electronic

  20. Synthesis of nanocrystalline ZnO thin films by electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Kondkar, V.; Rukade, D.; Bhattacharyya, V.

    2018-05-01

    Nanocrystalline ZnO thin films have potential for applications in variety of optoelectronic devices. In the present study, nanocrystalline thin films of ZnO are grown on fused silica substrate using electron beam (e-beam) evaporation technique. Phase identification is carried out using Glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy. Ultraviolet-Visible (UV-Vis) spectroscopic analysis is carried out to calculate energy band gap of the ZnO film. Surface morphology of the film is investigated using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). Highly quality nanocrystalline thin films of hexagonal wurtzite ZnO are synthesized using e-beam evaporation technique.