Synthesis and microstructural TEM investigation of CaCu{sub 3}Ru{sub 4}O{sub 12} ceramic and thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brize, Virginie; STMicroelectronics, 16 rue P and M Curie, 37001 Tours; Autret-Lambert, Cecile, E-mail: cecile.autret-lambert@univ-tours.fr

2011-10-15

CaCu{sub 3}Ru{sub 4}O{sub 12} (CCRO) is a conductive oxide having the same structure as CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO{sub 4} substrate. Structural and physical properties of bulkmore » CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation. - Graphical Abstract: Structure of CaCu{sub 3}Ru{sub 4}O{sub 12} showing the RuO{sub 6} octahedra and the square planar environment for Cu{sup 2+}. Highlights: > In this study, we investigate the structural properties and microstructure of ceramics CaCu{sub 3}Ru{sub 4}O{sub 12}. > We study the conduction properties of polycrystalline material. > Then we synthesize the conductive thin film which is deposited on a high K material with the same structure (CaCu{sub 3}Ti{sub 4}O{sub 12}).« less

Controlling the preferential orientation in sol-gel prepared CaCu3Ti4O12 thin films by LaAlO3 and NdGaO3 substrates

NASA Astrophysics Data System (ADS)

Pongpaiboonkul, Suriyong; Kasa, Yumairah; Phokharatkul, Ditsayut; Putasaeng, Bundit; Hodak, Jose H.; Wisitsoraat, Anurat; Hodak, Satreerat K.

2016-11-01

Researchers have paid considerable attention to CaCu3Ti4O12 (CCTO) due to the colossal dielectric constant over a wide range of frequency and temperature. Despite of the growing number of works dealing with CCTO, there have been few studies of the role played by the substrate in inducing structural and dielectric effects of this material. In this work, highly-oriented CCTO thin films have been deposited on LaAlO3(100), NdGaO3(100) and NdGaO3(110) substrates using a sol-gel method. These single crystal substrates were chosen in terms of small lattice mismatch between CCTO and the substrate. The X-ray diffraction patterns showed that the CCTO film layers grow with different orientations depending upon the substrate used. We show that the preferred orientation of CCTO thin films can be manipulated to a high degree by growing it on specific crystal planes of the substrates without the use of buffer layers. Colossal dielectric constants are observed in our films which appear to correlate with the film crystallinity and preferred orientation.

Formation of the 110-K superconducting phase in Pb-doped Bi-Sr-Ca-Cu-O thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kula, W.; Sobolewski, R.; Gorecka, J.

1991-09-15

Investigation of the 110-K Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub {ital x}} phase formation in superconducting thin films of Bi-based cuprates is reported. The films were dc magnetron sputtered from single Bi(Pb)-Sr-Ca-Cu-O targets of various stoichiometries, and subsequently annealed in air at high temperatures. The influence of the initial Pb content, annealing conditions, as well as the substrate material on the growth of the 110-K phase was investigated. We found that the films, fully superconducting above 100 K could be reproducibly fabricated on various dielectric substrates from Pb-rich targets by optimizing annealing conditions for each initial Pb/Bi ratio. Heavy Pb dopingmore » considerably accelerated formation of the 110-K phase, reducing the film annealing time to less than 1 h. Films containing, according to the x-ray measurement, more than 90% of the 110-K phase were obtained on MgO substrates, after sputtering from the Bi{sub 2}Pb{sub 2.5}Sr{sub 2}Ca{sub 2.15}Cu{sub 3.3}O{sub {ital x}} target and annealing in air for 1 h at 870 {degree}C. The films were {ital c}-axis oriented, with 4.5-K-wide superconducting transition, and zero resistivity at 106 K. Their critical current density was 2 {times} 10{sup 2} A/cm{sup 2} at 90 K, and above 10{sup 4} A/cm{sup 2} below 60 K. The growth of the 110-K phase on epitaxial substrates, such as CaNdAlO{sub 4} and SrTiO{sub 3}, was considerably deteriorated, and the presence of the 80- and 10-K phases was detected. Nevertheless, the best films deposited on these substrates were fully superconducting at 104 K and exhibited critical current densities above 2 {times} 10{sup 5} A/cm{sup 2} below 60 K{minus}one order of magnitude greater than the films deposited on MgO.« less

Multi-functional properties of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

2012-09-01

In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

Synthesis and microstructural TEM investigation of CaCu 3Ru 4O 12 ceramic and thin film

NASA Astrophysics Data System (ADS)

Brizé, Virginie; Autret-Lambert, Cécile; Wolfman, Jérôme; Gervais, Monique; Gervais, François

2011-10-01

CaCu 3Ru 4O 12 (CCRO) is a conductive oxide having the same structure as CaCu 3Ti 4O 12 (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO 4 substrate. Structural and physical properties of bulk CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

PubMed Central

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-01-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications. PMID:27703253

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

NASA Astrophysics Data System (ADS)

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates.

PubMed

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y B; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-05

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO 3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu 3 Ti 4 O 12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Optimisation of growth of epitaxial Tl 2Ba 2Ca 1Cu 2O 8 superconducting thin films for electronic device applications

NASA Astrophysics Data System (ADS)

Michael, Peter C.; Johansson, L.-G.; Bengtsson, L.; Claeson, T.; Ivanov, Z. G.; Olsson, E.; Berastegui, P.; Stepantsov, E.

1994-12-01

Epitaxial thin films of Tl 2Ba 2Ca 1Cu 2O 8 (Tl-2212) superconductor have been grown on single crystal (100) lanthanum aluminate (LaAlO 3) substrates by a two stage process: laser ablation of a BaCaCuO (0212) sintered target and post-deposition anneal ex-situ in a thallium environment. The films are c-axis oriented with in-plane epitaxy as determined by x-ray diffraction (XRD θ-2θ and φ-scans). Superconducting transition temperatures as high as 105.5K have been obtained both from four-probe resistance and a.c. magnetic susceptibility measurements. Film morphology and chemical composition have been assessed by scanning electron microscopy (SEM) and energy dispersive x-ray analysis (EDX). Sensitivity of the precursor film to environmental exposure has proven to be a determining factor in the reproducibility of film growth characteristics. The effect of oxygen partial pressure and substrate temperature used in the precursor film synthesis, as well as the thallium annealing temperature and duration, on the growth of Tl-2212 thin films is reported.

Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

NASA Astrophysics Data System (ADS)

Yao, Z. Q.; He, B.; Zhang, L.; Zhuang, C. Q.; Ng, T. W.; Liu, S. L.; Vogel, M.; Kumar, A.; Zhang, W. J.; Lee, C. S.; Lee, S. T.; Jiang, X.

2012-02-01

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (˜3.46-3.87 eV); Hall measurements verify the highest hole mobilities (˜11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ˜8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

Interplay between current driven ferromagnetism in charge ordered antiferromagnetic Pr0.5Ca0.5MnO3 and superconducting YBa2Cu3O7-δ thin film multilayer

NASA Astrophysics Data System (ADS)

Baisnab, Dipak Kumar; Sardar, Manas; Amaladass, E. P.; Vaidhyanathan, L. S.; Baskaran, R.

2018-07-01

Thin film multilayer heterostructure of alternate YBa2Cu3O7-δ (YBCO) and Pr0.5Ca0.5MnO3 (PCMO) with thickness of each layer ∼60 nm has been deposited on (100) oriented SrTiO3 substrate by Pulsed Laser Deposition technique. A half portion of the base YBCO layer was masked in situ using mechanical shadow mask and in the remaining half portion, five alternate layers of PCMO and YBCO thin films were deposited. Magnetoresistance measurements were carried out under externally applied magnetic field and injection current. A noticeable damped oscillation of the superconducting transition temperature (TC) of this multilayer with respect to magnetic field is seen. Curiously, the field at which the first minimum in TC occurs, decreases as an injection current is driven perpendicular/parallel to the multilayers. Both these phenomena indicate that ferromagnetic correlation can be induced in antiferromagnetic PCMO thin films by (1) external magnetic field, or (2) injection current. While (1) is well researched, our study indicates that ferromagnetism can be induced by small amount of current in PCMO thin films. This unusual behavior points towards the strongly correlated nature of electrons in PCMO.

Effect of substrate on the atomic structure and physical properties of thermoelectric Ca3Co4O9 thin films

NASA Astrophysics Data System (ADS)

Qiao, Q.; Gulec, A.; Paulauskas, T.; Kolesnik, S.; Dabrowski, B.; Ozdemir, M.; Boyraz, C.; Mazumdar, D.; Gupta, A.; Klie, R. F.

2011-08-01

The incommensurately layered cobalt oxide Ca3Co4O9 exhibits an unusually high Seebeck coefficient as a polycrystalline bulk material, making it ideally suited for many high temperature thermoelectric applications. In this paper, we investigate properties of Ca3Co4O9 thin films grown on cubic perovskite SrTiO3, LaAlO3, and (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates and on hexagonal Al2O3 (sapphire) substrates using the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy analysis indicate strain-free growth of films, irrespective of the substrate. However, depending on the lattice and symmetry mismatch, defect-free growth of the hexagonal CoO2 layer is stabilized only after a critical thickness and, in general, we observe the formation of a stable Ca2CoO3 buffer layer near the substrate-film interface. Beyond this critical thickness, a large concentration of CoO2 stacking faults is observed, possibly due to weak interlayer interaction in this layered material. We propose that these stacking faults have a significant impact on the Seebeck coefficient and we report higher values in thinner Ca3Co4O9 films due to additional phonon scattering sites, necessary for improved thermoelectric properties.

Method of forming superconducting Tl-Ba-Ca-Cu-O films

DOEpatents

Wessels, Bruce W.; Marks, Tobin J.; Richeson, Darrin S.; Tonge, Lauren M.; Zhang, Jiming

1993-01-01

A method of forming a superconducting Tl-Ba-Ca-Cu-O film is disclosed, which comprises depositing a Ba-Ca-Cu-O film on a substrate by MOCVD, annealing the deposited film and heat-treating the annealed film in a closed circular vessel with TlBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x and cooling to form said superconducting film of TlO.sub.m Ba.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.2n+2, wherein m=1,2 and n=1,2,3.

Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghonge, S.G.; Goo, E.; Ramesh, R.

1994-12-31

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity

NASA Astrophysics Data System (ADS)

Fiorenza, P.; Lo Nigro, R.; Sciuto, A.; Delugas, P.; Raineri, V.; Toro, R. G.; Catalano, M. R.; Malandrino, G.

2009-03-01

The physical properties of CaCu3Ti4O12 (CCTO) thin films grown by metal organic chemical vapor deposition on LaAlO3 substrates have been investigated. The structural, compositional, and optical characteristics have been evaluated, and all the collected data demonstrated that in the obtained (001) epitaxial CCTO thin films, a low defect density is present. The electrical behavior of the deposited thin films has been studied from both micro- and nanoscopic points of view and compared with the properties reported in the literature. The electrical measurements on large area capacitors indicated that in the investigated work frequency range (102-106 Hz), the CCTO films possess dielectric constants close to the theoretically predicted "intrinsic" value and almost independent of the frequency. The nanoscopic dielectric investigation demonstrated that the deposited CCTO films possess n-type semiconducting nature and that a colossal extrinsic behavior can be locally achieved.

Investigation of noble metal substrates and buffer layers for BiSrCaCuO thin films

NASA Astrophysics Data System (ADS)

Matthiesen, M. M.; Rubin, L. M.; Williams, K. E.; Rudman, D. A.

Noble metal buffer layers and substrates for Bi2Sr2CaCu2O8 (BSCCO) films were investigated using bulk ceramic processing and thin-film techniques. Highly oriented, superconducting BSCCO films were fabricated on polycrystalline Ag substrates and on Ag/MgO and Ag/YSZ structures. Such films could not be produced on Au or Pt substrates under any annealing conditions. In addition, superconducting BSCCO films could not be produced on Ag/Al2O3, Ag/SiO2/Si, or Ag/(Haynes 230 alloy) structures using high annealing temperatures (870 C). However, oriented although poorly connected, superconducting BSCCO films were fabricated on Ag/Al2O3 structures by using lower annealing temperatures (820 C). Once lower processing temperatures are optimized, Ag may be usable as a buffer layer for BSCCO films.

Conductor-backed coplanar waveguide resonators of Y-Ba-Cu-O and Tl-Ba-Ca-Cu-O on LaAlO3

NASA Technical Reports Server (NTRS)

Miranda, F. A.; Bhasin, K. B.; Stan, M. A.; Kong, K. S.; Itoh, T.

1992-01-01

Conductor-backed coplanar waveguide (CBCPW) resonators operating at 10.8 GHz have been fabricated from Tl-Ba-Ca-O (TBCCO) and Y-Ba-Cu-O (YBCO) thin films on LaAlO3. The resonators consist of a coplanar waveguide (CPW) patterned on the superconducting film side of the LaAlO3 substrate with a gold ground plane coated on the opposite side. These resonators were tested in the temperature range from 14 to 106 K. At 77 K, the best of our TBCCO and YBCO resonators have an unloaded quality factor (Qo) 7 and 4 times, respectively, larger than that of a similar all-gold resonator. In this study, the Qo's of the TBCCO resonators were larger than those of their YBCO counterparts throughout the aforementioned temperature range.

Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

NASA Astrophysics Data System (ADS)

Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

2018-03-01

It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

Crystallization, fluoridation and some properties of apatite thin films prepared through rf-sputtering from CaO-P2O5 glasses.

PubMed

Yamashita, K; Matsuda, M; Arashi, T; Umegaki, T

1998-07-01

Using calcium phosphate glass targets with the CaO/P2O5 molar ratios of 1.50-0.50, much lower than the stoichiometric value of 3.3 for hydroxyapatite, thin films of stoichiometric hydroxy-, nonstoichiometric oxyhydroxy- and Ca-deficient oxyhydroxy-apatites were prepared on alumina ceramic substrates by rf-sputtering followed by post-annealing. Based on the present results, a phase diagram for CaO-P2O5 at low temperatures in the ambience of air was depicted for thin films. The ambient H2O vapor had an influence on the phase diagram: Tricalcium phosphate was changed to apatite in the presence of H2O vapor. Dense fluorohydroxyapatite thin films were prepared by fluoridation of those apatite thin films at a low temperature such as 200 degrees C. In the present report, some functional properties of thin films thus prepared were also shown.

Influences of annealing temperature on sprayed CuFeO2 thin films

NASA Astrophysics Data System (ADS)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Synthesis of BiPbSrCaCuO superconductor

DOEpatents

Hults, W.L.; Kubat-Martin, K.A.; Salazar, K.V.; Phillips, D.S.; Peterson, D.E.

1994-04-05

A process and a precursor composition for preparing a lead-doped bismuth-strontium-calcium-copper oxide superconductor of the formula Bi[sub a]Pb[sub b]Sr[sub c]Ca[sub d]Cu[sub e]O[sub f] wherein a is from about 1.7 to about 1.9, b is from about 0.3 to about 0.45, c is from about 1.6 to about 2.2, d is from about 1.6 to about 2.2, e is from about 2.97 to about 3.2 and f is 10[+-]z by reacting a mixture of Bi[sub 4]Sr[sub 3]Ca[sub 3]Cu[sub 4]O[sub 16[+-]z], an alkaline earth metal cuprate, e.g., Sr[sub 9]Ca[sub 5]Cu[sub 24]O[sub 41], and an alkaline earth metal plumbate, e.g., Ca[sub 2[minus]x]Sr[sub x]PbO[sub 4] wherein x is about 0.5, is disclosed.

Synthesis of BiPbSrCaCuO superconductor

DOEpatents

Hults, William L.; Kubat-Martin, Kimberly A.; Salazar, Kenneth V.; Phillips, David S.; Peterson, Dean E.

1994-01-01

A process and a precursor composition for preparing a lead-doped bismuth-strontium-calcium-copper oxide superconductor of the formula Bi.sub.a Pb.sub.b Sr.sub.c Ca.sub.d Cu.sub.e O.sub.f wherein a is from about 1.7 to about 1.9, b is from about 0.3 to about 0.45, c is from about 1.6 to about 2.2, d is from about 1.6 to about 2.2, e is from about 2.97 to about 3.2 and f is 10.+-.z by reacting a mixture of Bi.sub.4 Sr.sub.3 Ca.sub.3 Cu.sub.4 O.sub.16.+-.z, an alkaline earth metal cuprate, e.g., Sr.sub.9 Ca.sub.5 Cu.sub.24 O.sub.41, and an alkaline earth metal plumbate, e.g., Ca.sub.2-x Sr.sub.x PbO.sub.4 wherein x is about 0.5, is disclosed.

Single orthorhombic b axis orientation and antiferromagnetic ordering type in multiferroic CaMnO3 thin film with La0.67Ca0.33MnO3 buffer layer

NASA Astrophysics Data System (ADS)

Wang, F.; Dong, B. J.; Zhang, Y. Q.; Liu, W.; Zhang, H. R.; Bai, Y.; Li, S. K.; Yang, T.; Sun, J. R.; Wang, Z. J.; Zhang, Z. D.

2017-09-01

The detailed crystal structure and antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the antiferromagnetic ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the antiferromagnetic ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33MnO3/CaMnO3 interface, which arises from a competition between the double-exchange ferromagnetic La0.67Ca0.33MnO3 and super-exchange antiferromagnetic CaMnO3 below the spin glass freezing temperature.

Bi-Sr-Ca-Cu-O and Pb-Bi-Sr-Ca-Cu-O superconductor films via an electrodeposition process

NASA Astrophysics Data System (ADS)

Maxfield, M.; Eckhardt, H.; Iqbal, Z.; Reidinger, F.; Baughman, R. H.

1989-05-01

A novel electrochemical process has been developed for the formation of superconducting films. Using this process, superconducting films of Bi2Sr2Ca1Cu2O8 and (Pb,Bi)2Sr2Ca1Cu2O8 have been formed. The process consists of simultaneously depositing the metallic constituents of the superconductor from a single electrolyte, and thermally oxidizing the resulting precursors film to form the superconducting phase. Application of -4 to -5 V vs Ag/Ag(+) to a conductive cathode substrate which is immersed in an electrolyte containing salts of all of the metals reduces the metal cations, causing then to deposit on the cathode as a metallic film precursor. Precursor films having desired stoichiometries were obtained by regulating the electrolyte bath composition.

Electrochemical and physical properties of electroplated CuO thin films.

PubMed

Dhanasekaran, V; Mahalingam, T

2013-01-01

Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

Direct Correlations of Grain Boundary Potentials to Chemical States and Dielectric Properties of Doped CaCu3Ti4O12 Thin Films.

PubMed

Cho, Ahra; Han, Chan Su; Kang, Meenjoo; Choi, Wooseok; Lee, Jihwan; Jeon, Jaecheol; Yu, Sujae; Jung, Ye Seul; Cho, Yong Soo

2018-05-09

Colossal dielectric constant CaCu 3 Ti 4 O 12 has been recognized as one of the rare materials having intrinsic interfacial polarization and thus unusual dielectric characteristics, in which the electrical state of the grain boundary is critical. Here, the direct correlation between the grain boundary potential and relative permittivity is proposed for the CaCu 3 Ti 4 O 12 thin films doped with Zn, Ga, Mn, and Ag as characterized by Kelvin probe force microscopy. The dopants are intended to provide the examples of variable grain boundary potentials that are driven by chemical states including Cu + , Ti 3+ , and oxygen vacancy. Grain boundary potential is nearly linearly proportional to the dielectric constant. This effect is attributed to the increased charge accumulation near the grain boundary, depending on the choice of the dopant. As an example, 1 mol % Ag-doped CaCu 3 Ti 4 O 12 thin films demonstrate the best relative permittivity as associated with a higher grain boundary potential of 120.3 mV compared with 82.6 mV for the reference film. The chemical states across grain boundaries were further verified by using spherical aberration-corrected scanning transmission electron microscopy with the simultaneous electron energy loss spectroscopy.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

Surface chirality of CuO thin films.

PubMed

Widmer, Roland; Haug, Franz-Josef; Ruffieux, Pascal; Gröning, Oliver; Bielmann, Michael; Gröning, Pierangelo; Fasel, Roman

2006-11-01

We present X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD) investigations of CuO thin films electrochemically deposited on an Au(001) single-crystal surface from a solution containing chiral tartaric acid (TA). The presence of enantiopure TA in the deposition process results in a homochiral CuO surface, as revealed by XPD. On the other hand, XPD patterns of films deposited with racemic tartaric acid or the "achiral" meso-tartaric acid are completely symmetric. A detailed analysis of the experimental data using single scattering cluster calculations reveals that the films grown with l(+)-TA exhibit a CuO(1) orientation, whereas growth in the presence of d(-)-TA results in a CuO(11) surface orientation. A simple bulk-truncated model structure with two terminating oxygen layers reproduces the experimental XPD data. Deposition with alternating enantiomers of tartaric acid leads to CuO films of alternating chirality. Enantiospecifity of the chiral CuO surfaces is demonstrated by further deposition of CuO from a solution containing racemic tartaric acid. The pre-deposited homochiral films exhibit selectivity toward the same enantiomeric deposition pathway.

Real-space localization and quantification of hole distribution in chain-ladder Sr3Ca11Cu24O41 superconductor.

PubMed

Bugnet, Matthieu; Löffler, Stefan; Hawthorn, David; Dabkowska, Hanna A; Luke, Graeme M; Schattschneider, Peter; Sawatzky, George A; Radtke, Guillaume; Botton, Gianluigi A

2016-03-01

Understanding the physical properties of the chain-ladder Sr3Ca11Cu24O41 hole-doped superconductor has been precluded by the unknown hole distribution among chains and ladders. We use electron energy-loss spectrometry (EELS) in a scanning transmission electron microscope (STEM) at atomic resolution to directly separate the contributions of chains and ladders and to unravel the hole distribution from the atomic scale variations of the O-K near-edge structures. The experimental data unambiguously demonstrate that most of the holes lie within the chain layers. A quantitative interpretation supported by inelastic scattering calculations shows that about two holes are located in the ladders, and about four holes in the chains, shedding light on the electronic structure of Sr3Ca11Cu24O41. Combined atomic resolution STEM-EELS and inelastic scattering calculations is demonstrated as a powerful approach toward a quantitative understanding of the electronic structure of cuprate superconductors, offering new possibilities for elucidating their physical properties.

Real-space localization and quantification of hole distribution in chain-ladder Sr3Ca11Cu24O41 superconductor

PubMed Central

Bugnet, Matthieu; Löffler, Stefan; Hawthorn, David; Dabkowska, Hanna A.; Luke, Graeme M.; Schattschneider, Peter; Sawatzky, George A.; Radtke, Guillaume; Botton, Gianluigi A.

2016-01-01

Understanding the physical properties of the chain-ladder Sr3Ca11Cu24O41 hole-doped superconductor has been precluded by the unknown hole distribution among chains and ladders. We use electron energy-loss spectrometry (EELS) in a scanning transmission electron microscope (STEM) at atomic resolution to directly separate the contributions of chains and ladders and to unravel the hole distribution from the atomic scale variations of the O-K near-edge structures. The experimental data unambiguously demonstrate that most of the holes lie within the chain layers. A quantitative interpretation supported by inelastic scattering calculations shows that about two holes are located in the ladders, and about four holes in the chains, shedding light on the electronic structure of Sr3Ca11Cu24O41. Combined atomic resolution STEM-EELS and inelastic scattering calculations is demonstrated as a powerful approach toward a quantitative understanding of the electronic structure of cuprate superconductors, offering new possibilities for elucidating their physical properties. PMID:27051872

Sol-gel deposited Cu2O and CuO thin films for photocatalytic water splitting.

PubMed

Lim, Yee-Fun; Chua, Chin Sheng; Lee, Coryl Jing Jun; Chi, Dongzhi

2014-12-21

Cu2O and CuO are attractive photocatalytic materials for water splitting due to their earth abundance and low cost. In this paper, we report the deposition of Cu2O and CuO thin films by a sol-gel spin-coating process. Sol-gel deposition has distinctive advantages such as low-cost solution processing and uniform film formation over large areas with a precise stoichiometry and thickness control. Pure-phase Cu2O and CuO films were obtained by thermal annealing at 500 °C in nitrogen and ambient air, respectively. The films were successfully incorporated as photocathodes in a photoelectrochemical (PEC) cell, achieving photocurrents of -0.28 mA cm(-2) and -0.35 mA cm(-2) (for Cu2O and CuO, respectively) at 0.05 V vs. a reversible hydrogen electrode (RHE). The Cu2O photocurrent was enhanced to -0.47 mA cm(-2) upon incorporation of a thin layer of a NiOx co-catalyst. Preliminary stability studies indicate that CuO may be more stable than Cu2O as a photocathode for PEC water-splitting.

Phase separation enhanced magneto-electric coupling in La0.7Ca0.3MnO3/BaTiO3 ultra-thin films

PubMed Central

Alberca, A.; Munuera, C.; Azpeitia, J.; Kirby, B.; Nemes, N. M.; Perez-Muñoz, A. M.; Tornos, J.; Mompean, F. J.; Leon, C.; Santamaria, J.; Garcia-Hernandez, M.

2015-01-01

We study the origin of the magnetoelectric coupling in manganite films on ferroelectric substrates. We find large magnetoelectric coupling in La0.7Ca0.3MnO3/BaTiO3 ultra-thin films in experiments based on the converse magnetoelectric effect. The magnetization changes by around 30–40% upon applying electric fields on the order of 1 kV/cm to the BaTiO3 substrate, corresponding to magnetoelectric coupling constants on the order of α = (2–5)·10−7 s/m. Magnetic anisotropy is also affected by the electric field induced strain, resulting in a considerable reduction of coercive fields. We compare the magnetoelectric effect in pre-poled and unpoled BaTiO3 substrates. Polarized neutron reflectometry reveals a two-layer behavior with a depressed magnetic layer of around 30 Å at the interface. Magnetic force microscopy (MFM) shows a granular magnetic structure of the La0.7Ca0.3MnO3. The magnetic granularity of the La0.7Ca0.3MnO3 film and the robust magnetoelastic coupling at the La0.7Ca0.3MnO3/BaTiO3 interface are at the origin of the large magnetoelectric coupling, which is enhanced by phase separation in the manganite. PMID:26648002

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Deng, Guochu; He, Zhangbin; Muralt, Paul

2009-04-01

The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 (CCTO) thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor defect at a level ˜90 meV higher than valence band. Two contact types, metal-semiconductor and metal-insulator-semiconductor junctions, were observed and their barrier heights, and impurity concentrations were theoretically calculated. Accordingly, the Schottky barrier height of metal-semiconductor contact is about 0.8 eV, and the diffusion barrier height of metal-insulator-semiconductor contact is about 0.4-0.7 eV. The defect concentrations of both samples are quite similar, of the magnitude of 1019 cm-3, indicating an inherent feature of high defect concentration.

Flux pinning enhancement in thin films of Y3 Ba5 Cu8O18.5 + d

NASA Astrophysics Data System (ADS)

Aghabagheri, S.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.

2018-06-01

YBa2Cu3O7 (Y123) and Y3Ba5Cu8O18 (Y358) thin films were deposited by pulsed laser deposition method. XRD analysis shows both films grow in c axis orientation. Resistivity versus temperature analysis shows superconducting transition temperature was about 91.2 K and 91.5 K and transition width for Y358 and Y123 films was about 0.6 K and 1.6 K, respectively. Analysis of the temperature dependence of the AC susceptibility near the transition temperature, employing Bean's critical state model, indicates that intergranular critical current density for Y358 films is more than twice of intergranular critical current density of Y123 films. Thus, flux pining is stronger in Y358 films. Weak links in the both samples is of superconductor-normal-superconductor (SNS) type irrespective of stoichiometry.

Superconducting thin films of Bi-Sr-Ca-Cu-O by laser ablation

NASA Astrophysics Data System (ADS)

Bedekar, M. M.; Safari, A.; Wilber, W.

1992-11-01

Superconducting thin films of Bi-Sr-Ca-Cu-O have been deposited by KrF excimer laser ablation. The best in situ films showed a Tc onset of 110 K and a Tc(0) of 76 K. A study of the laser plume revealed the presence of two distinct regimes. The forward directed component increased with fluence and the film composition was stoichiometric in this region. This is in agreement with the results on the 123 system by Venkatesan et al. [1]. The film properties were found to be critically dependent on the substrate temperature and temperatures close to melting gave rise to 2212 and 2223 phases. At lower temperatures, 2201 and amorphous phases were obtained. The film morphology and superconducting properties were a function of the target to substrate distance and the oxygen pressure during deposition and cooling. An increase in the target to substrate distance led to a deterioration of the properties due to the energy consideration for the formation of 2212 and 2223 phases. The best films were obtained using cooling pressures of 700 Torr. The microwave surface resistance of the films measured at 35 GHz dropped below that of copper at 30 K. Film growth was studied using X-ray diffraction and STM/AFM. This work is a discussion of the role of the different variables on the film properties.

Electrical contacts to thin layers of Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Suzuki, Shota; Taniguchi, Hiroki; Kawakami, Tsukasa; Cosset-Cheneau, Maxen; Arakawa, Tomonori; Miyasaka, Shigeki; Tajima, Setsuko; Niimi, Yasuhiro; Kobayashi, Kensuke

2018-05-01

Thin layers of Bi2Sr2CaCu2O8+δ (Bi2212) were fabricated using the mechanical exfoliation technique. Good electrical contacts to the thin Bi2212 films with low contact resistance were realized by depositing Ag and Au electrodes onto the Bi2212 films and annealing them with an oxygen flow at 350 °C for 30 min. We observed cross-section images of the Bi2212 thin film device using a transmission electron microscope to characterize the diffusion of Ag and Au atoms into the Bi2212 thin film.

Thermal conversion of Cu4O3 into CuO and Cu2O and the electrical properties of magnetron sputtered Cu4O3 thin films

NASA Astrophysics Data System (ADS)

Murali, Dhanya S.; Aryasomayajula, Subrahmanyam

2018-03-01

Among the three oxides of copper (CuO, Cu2O, and Cu4O3), Cu4O3 phase (paramelaconite is a natural, and very scarce mineral) is very difficult to synthesize. It contains copper in both + 1 and + 2 valence states, with an average composition Cu2 1+Cu2 2+O3. We have successfully synthesized Cu4O3 phase at room temperature (300 K) by reactive DC magnetron sputtering by controlling the oxygen flow rate (Murali and Subrahmanyam in J Phys D Appl Phys 49:375102, 2016). In the present communication, Cu4O3 thin films are converted to CuO phases by annealing in the air at 680 K and to Cu2O phase when annealed in argon at 720 K; these phase changes are confirmed by temperature-dependent Raman spectroscopy studies. Probably, this is the first report of the conversion of Cu4O3-CuO and Cu2O by thermal annealing. The temperature-dependent (300-200 K) electrical transport properties of Cu4O3 thin films show that the charge transport above 190 K follows Arrhenius-type behavior with activation energy of 0.14 eV. From photo-electron spectroscopy and electrical transport measurements of Cu4O3 thin films, a downward band bending is observed at the surface of the thin film, which shows its p-type semiconducting nature. The successful preparation of phase pure p-type semiconducting Cu4O3 could provide opportunities to further explore its potential applications.

Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-δ thin films

NASA Astrophysics Data System (ADS)

Gauquelin, Nicolas; Zhang, Hao; Zhu, Guozhen; Wei, John Y. T.; Botton, Gianluigi A.

2018-05-01

We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-δ (YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity.

Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems

NASA Astrophysics Data System (ADS)

Endo, Tamio; Horie, Munehiro; Hirate, Naoki; Itoh, Katsutoshi; Yamada, Satoshi; Tada, Masaki; Itoh, Ken-ichi; Sugiyama, Morihiro; Sano, Shinji; Watabe, Kinji

1998-07-01

Thin films of a-oriented YBa2Cu3Ox (YBCO), Ca-doped c-oriented Bi2(Sr,Ca)2CuOx and nondoped c-oriented Bi2Sr2CuOx (Bi2201) were prepared at low temperatures by ion beam sputtering with supply of oxygen molecules or plasma. The plasma enhances crystal growth of the a-YBCO and Ca-doped Bi2201 phases. This can be interpreted in terms of their higher surface energies. The growth and quality of nondoped Bi2201 are improved with the supply of oxygen molecules. This particular result could be interpreted by the collision process between the oxygen molecules and the sputtered particles.

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

NASA Astrophysics Data System (ADS)

Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

2017-12-01

A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Paul, T.; Ghosh, A.

2017-04-01

We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

Sequentially evaporated thin film YBa2Cu3O(7-x) superconducting microwave ring resonator

NASA Technical Reports Server (NTRS)

Rohrer, Norman J.; To, Hing Y.; Valco, George J.; Bhasin, Kul B.; Chorey, Chris; Warner, Joseph D.

1990-01-01

There is great interest in the application of thin film high temperature superconductors in high frequency electronic circuits. A ring resonator provides a good test vehicle for assessing the microwave losses in the superconductor and for comparing films made by different techniques. Ring resonators made of YBa2Cu3O(7-x) have been investigated on LaAlO3 substrates. The superconducting thin films were deposited by sequential electron beam evaporation of Cu, Y, and BaF2 with a post anneal. Patterning of the superconducting film was done using negative photolithography. A ring resonator was also fabricated from a thin gold film as a control. Both resonators had a gold ground plane on the backside of the substrate. The ring resonators' reflection coefficients were measured as a function of frequency from 33 to 37 GHz at temperatures ranging from 20 K to 68 K. The resonator exhibited two resonances which were at 34.5 and 35.7 GHz at 68 K. The resonant frequencies increased with decreasing temperature. The magnitude of the reflection coefficients was in the calculation of the unloaded Q-values. The performance of the evaporated and gold resonator are compared with the performance of a laser ablated YBa2Cu3O(7-x) resonator. The causes of the double resonance are discussed.

Superconducting YBa2Cu3O7- δ Thin Film Detectors for Picosecond THz Pulses

NASA Astrophysics Data System (ADS)

Probst, P.; Scheuring, A.; Hofherr, M.; Wünsch, S.; Il'in, K.; Semenov, A.; Hübers, H.-W.; Judin, V.; Müller, A.-S.; Hänisch, J.; Holzapfel, B.; Siegel, M.

2012-06-01

Ultra-fast THz detectors from superconducting YBa2Cu3O7- δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO2 and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm2) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.

Investigation on the growth of CaCu 3Ti 4O 12 thin film and the origins of its dielectric relaxations

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang; Hark, S. K.; Xu, H. Y.; Mei, W. N.

2012-01-01

Using the radio frequency magnetron sputtering, CaCu 3Ti 4O 12 (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ˜10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.

Structural and optical properties of ITO and Cu doped ITO thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Biopsy applications of Ti50Ni41Cu9 shape memory films for wireless capsule endoscope

NASA Astrophysics Data System (ADS)

Du, Hejun; Fu, Yongqing; Zhang, S.; Luo, Jack K.; Flewitt, Andrew J.; Milne, William I.

2004-02-01

Wireless capsule endoscopy (WCE) is a new technology to evaluate the patient with obscure gastrointestinal bleeding. However, there is still some deficiency existing in the current WCE, for example, lack of ability to biopsy and precisely locate the pathology. This study aimed to prepare and characterize TiNiCu shape memory alloy thin films for developing microgripper for biopsy (tissue sampling and tagging) applications. Ti50Ni41Cu9 thin films were prepared by co-sputtering of TiNi and Cu targets, and their transformation temperatures were slightly above that of human body. Results from differential scanning calorimetry, in-situ X-ray diffraction, curvature and electrical resistance measurement revealed clearly martensitic transformation of the deposited TiNiCu films upon heating and cooling. The biocompatibility of the TiNiCu films in the simulated gastric and intestinal solutions was also studied. Results showed the release of Ni and Cu ions is much less than the toxic level and the film did not lose shape memory effect even after 10-day immersion in the simulated solutions. TiNiCu/Si micro-cantilevers with and without electrodes were fabricated using the conventional micromachining methods and apparent shape memory effect upon heating and cooling was demonstrated.

A comparison study of Co and Cu doped MgO diluted magnetic thin films

NASA Astrophysics Data System (ADS)

Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

2017-02-01

Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

Temperature dependence of superfluid density in YBa 2Cu 3O 7- δ and Y 0.7Ca 0.3Ba 2Cu 3O 7- δ thin films: A doping dependence study of the linear slope

NASA Astrophysics Data System (ADS)

Lai, L. S.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.

2005-11-01

By using a microstrip ring resonator to measure the temperature dependence of the in-plane magnetic penetration depth λ(T) in YBa2Cu3O7-δ (YBCO) and Y0.7Ca0.3Ba2Cu3O7-δ (Ca-YBCO) epitaxially grown thin films, the linear temperature dependence of the superfluid density ρs/m∗ ≡ 1/λ2(T) was observed from the under- to the overdoped regime at the temperatures below T/Tc ≈ 0.3 . For the underdoped regime of YBCO and Ca-YBCO thin films, the magnitude of the slope d(1/λ2(T))/dT is insensitive to doping, and it can be treated in the framework of projected d-density-wave model. Combining these slope values with the thermal conductivity measurements, the Fermi-liquid correction factor α2 from the Fermi-liquid model, suggested by Wen and Lee, was revealed here with various doping levels.

Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo 2O 5.5+δ Thin Films

DOE PAGES

Cheng, Sheng; Lu, Jiangbo; Han, Dong; ...

2016-11-23

Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo 2O 5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo 2O 5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo 2O 5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo 2O 6 (δ = 0.5). The discrepancy of energymore » band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Thus, LaBaCo 2O 5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere.« less

Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films.

PubMed

Cheng, Sheng; Lu, Jiangbo; Han, Dong; Liu, Ming; Lu, Xiaoli; Ma, Chunrui; Zhang, Shengbai; Chen, Chonglin

2016-11-23

Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo 2 O 5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo 2 O 5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo 2 O 5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo 2 O 6 (δ = 0.5). The discrepancy of energy band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Hence, LaBaCo 2 O 5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere.

Ion-beam-induced ferromagnetism in Ca-doped LaMnO3 thin films grown on Si (100)

NASA Astrophysics Data System (ADS)

Sultan, Khalid; Aarif ul Islam, Shah; Habib, Zubida; Ikram, M.; Asokan, K.

2018-04-01

The ion-bean-induced room temperature ferromagnetic ordering in pulsed laser deposited Ca-doped LaMnO3 thin films grown on Si (100) are presented in the present study. In addition to this, changes bought by the ion beam in structural, morphological and electrical properties are presented. Dense electronic excitation produced by high energy 120 MeV Ag9+ ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ion irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. It is observed that the irradiated films show higher resistance than unirradiated films for all the compositions.

Thermoelectric Properties and Microstructure of Ca3 Co 4 O 9 thin films on SrTiO3 and Al2 O 3 Substrates

NASA Astrophysics Data System (ADS)

Paulauskas, T.; Qiao, Q.; Gulec, A.; Klie, R. F.; Ozdemir, M.; Boyraz, C.; Mazumdar, D.; Gupta, A.

2011-03-01

Ca 3 Co 4 O9 (CCO), a misfit layered structure exhibiting large Seebeck coefficient at temperatures up to 1000K has attracted increasing attention as a novel high-temperature thermoelectric material. In this work, we investigate CCO thin films grown on SrTi O3 (001) and Al 2 O3 (0001) using pulsed laser deposition. Quality of the thin films was examined using high-resolution transmission electron microscopy and thermoelectric transport measurements. HRTEM images show incommensurate stacks of Cd I2 -type Co O2 layer alternating with rock-salt-type Ca 2 Co O3 layer along the c-axis. Perovskite buffer layer about 10nm thick was found present between CCO and SrTi O3 accompanied by higher density of stacking faults. The CCO grown on Al 2 O3 exhibited numerous misoriented grains and presence of Ca x Co O2 phase. Seebeck coefficient measurements yield an improvement for both samples compared to the bulk value. We suggest that thermoelectric properties of CCO increase due to additional phonon scattering at the stacking faults as well as at the film surfaces/interfaces. This research was supported by the US Army Research Office (W911NF-10-1-0147) and the Sivananthan Undergraduate Research Fellowship.

Phase and electrical properties of PZT thin films embedded with CuO nano-particles by a hybrid sol-gel route

NASA Astrophysics Data System (ADS)

Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

2013-07-01

Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.

The series Bi2Sr2Ca(n-1) Cu(n)O(2n+4) (1 less than or equal to n less than or equal to 5): Phase stability and superconducting properties

NASA Technical Reports Server (NTRS)

Deguire, Mark R.; Bansal, Narottam P.; Farrell, David E.; Finan, Valerie; Kim, Cheol J.; Hills, Bethanie J.; Allen, Christopher J.

1989-01-01

Phase relations at 850 and 870 C, melting transitions in air, oxygen, and helium were studied for Bi(2.1)Sr(1.9) CuO6 and for the Bi2Sr2Ca(n-1) Cu(n)O(2n+4) for n = 1, 2, 3, 4, 5, and infinity (CaCuO2). Up to 870 C, the n = 2 composition resides in the compatibility tetrahedron bounded by Bi(2+x)(Sr,Ca)(3-y) Cu2O8, (Sr,Ca)14 Cu24O41, Ca2CuO3, and a Bi-Sr-Ca-O phase. The n is greater than or equal to 3 compositions reside in the compatibility tetrahedron Bi(2+x)(Sr,Ca)(3-y) Cu2O8 - (Sr,Ca)14 Cu24O41 - Ca2CuO3 - CuO up to 850 C. However, Bi(2+x)Sr(4-y) Cu3O10 forms for n is greater than or equal to 3 after extended heating at 870 C. Bi(2+x)Sr(2-y) CuO6 and Bi(2+x)(Sr,Ca)(3-y) Cu2O8 melt in air at 914 C and 895 C respectively. During melting, all of the compositions studied lose 1 to 2 percent by weight of oxygen from the reduction of copper. Bi(2+x)Sr(2-y) CuO6, Bi(2+n)(Sr,Ca)(3-y) Cu2O8, and Bi(2+x)(Sr,Ca)(4-y) Cu3O10 exhibit crystallographic alignment in a magnetic field, with the c-axes orienting parallel to the field.

n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

NASA Astrophysics Data System (ADS)

Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

2018-03-01

We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

Chemical nature of colossal dielectric constant of CaCu3Ti4O12 thin film by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Deng, Guochu; Xanthopoulos, Nicolas; Muralt, Paul

2008-04-01

Epitaxial CaCu3Ti4O12 thin films grown by pulsed laser deposition were studied in the as-deposited and oxygen annealed state. The first one exhibited the usual transition from dielectric to colossal dielectric behavior upon increasing the temperature to above 100K. This transition disappeared after annealing at 900°C in air. The two states significantly differ in their x-ray photoelectron spectra. The state of colossal dielectric constant corresponds to a bulk material with considerable amounts of Cu + and Ti3+, combined with Cu species enrichment at the surface. The annealed state exhibited a nearly stoichiometric composition with no Cu+ and Ti3+. The previously observed p-type conduction in the as-deposited state is thus related to oxygen vacancies compensated by the point defects of Cu+ and Ti3+.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films

PubMed Central

Cheng, Sheng; Lu, Jiangbo; Han, Dong; Liu, Ming; Lu, Xiaoli; Ma, Chunrui; Zhang, Shengbai; Chen, Chonglin

2016-01-01

Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo2O5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo2O5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo2O5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo2O6 (δ = 0.5). The discrepancy of energy band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Hence, LaBaCo2O5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere. PMID:27876830

Superconductivity above 100 K in Bi(Pb)-Ca-Sr-Cu-O films made by thermal decomposition of metal carboxylates

NASA Astrophysics Data System (ADS)

Klee, M.; de Vries, J. W. C.; Brand, W.

1988-11-01

Superconducting layers in the Bi(Pb)-Ca-Sr-Cu-O system are prepared by thermal decomposition of metal carboxylates. The films are deposited on MgO single crystal and ceramic substrates using a spin-coating and dip-coating process. The Bi-Ca-Sr-Cu-O films consist mainly of the low- Tc phase ( c-axis=3.073 nm), whereas partial substitution of Bi by Pb favours the formation of the high- Tc phase ( c-axis=3.707 nm). Films deposited on MgO (100) are strong c-axis preferentially oriented grown. While the Bi-Ca-Sr-Cu-O films show a step in the resistance versus temperature curve ( Tcf⋍80 K) due to the presence of the low- Tc and the high- Tc phase, the Bi(Pb)-Ca-Sr-Cu-O films have an onset at 110 K and are superconducting at 104 K. The temperature dependence of the critical current indicates that in the Bi-Ca-Sr-Cu-O system weak links of superconductor-isolator-superconductor type are present, while in the Bi(Pb)-Ca-Sr-Cu-O samples the contact is formed by normal-metal barriers. Using magnetic fields up to 5 T, the anisotropy of the resistive transition of the high- Tc phase was studied. In Bi(Pb)-Ca-Sr-Cu-O films the anisotropy ratio is about 18, and the corresponding coherence lengths are ξ ab(0)⋍3.6 nm and ξ c(0)⋍0.2 nm. These values are nearly the same as in the low- Tc phase.

Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

NASA Technical Reports Server (NTRS)

Warner, Joseph D.; Bhasin, Kul B.; Miranda, Felix A.

1991-01-01

Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.

Polar phase transitions in heteroepitaxial stabilized La0.5Y0.5AlO3 thin films

NASA Astrophysics Data System (ADS)

Liu, Shenghua; Zhang, Chunfeng; Zhu, Mengya; He, Qian; Chakhalian, Jak; Liu, Xiaoran; Borisevich, Albina; Wang, Xiaoyong; Xiao, Min

2017-10-01

We report on the fabrication of epitaxial La0.5Y0.5AlO3 ultrathin films on (001) LaAlO3 substrates. Structural characterizations by scanning transmission electron microscopy and x-ray diffraction confirm the high quality of the film with a - b + c - AlO6 octahedral tilt pattern. Unlike either of the nonpolar parent compound, LaAlO3 and YAlO3, second harmonic generation measurements on the thin films suggest a nonpolar-polar phase transition at T c near 500 K, and a polar-polar phase transition at T a near 160 K. By fitting the angular dependence of the second harmonic intensities, we further propose that the two polar structures can be assigned to the Pmc2 1 and Pmn2 1 space group, while the high temperature nonpolar structure belongs to the Pbnm space group.

Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiraishi, Takahisa; Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577; Katayama, Kiliha

2016-06-27

To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films were deposited on (111)Pt-coated SiO{sub 2}, Si, and CaF{sub 2} substrates with thermal expansion coefficients of 0.47, 4.5, and 22 × 10{sup −6}/ °C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films deposited on SiO{sub 2} and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF{sub 2} substrates were under in-plane compressive strain, and their volume fraction of monoclinic phasemore » was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 μC/cm{sup 2} was observed for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}, while ferroelectricity was barely observable for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}/CaF{sub 2}. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films.« less

Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering

NASA Astrophysics Data System (ADS)

Jong, Chao-An; Gan, Jon-Yiew

2000-02-01

Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.

Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

NASA Astrophysics Data System (ADS)

AlHammad, M. S.

2017-05-01

We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.

Sequentially evaporated thin Y-Ba-Cu-O superconductor films: Composition and processing effects

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.

Strain-relaxation and critical thickness of epitaxial La 1.85Sr 0.15CuO 4 films

DOE PAGES

Meyer, Tricia L; Jiang, Lu; Park, Sungkyun; ...

2015-12-08

We report the thickness-dependent strain-relaxation behavior and the associated impacts upon the superconductivity in epitaxial La 1.85Sr 0.15CuO 4 films grown on different substrates, which provide a range of strain. We have found that the critical thickness for the onset of superconductivity in La 1.85Sr 0.15CuO 4 films is associated with the finite thickness effect and epitaxial strain. In particular, thin films with tensile strain greater than ~0.25% revealed no superconductivity. We attribute this phenomenon to the inherent formation of oxygen vacancies that can be minimized via strain relaxation.

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

NASA Astrophysics Data System (ADS)

Pontes, F. M.; Pontes, D. S. L.; Leite, E. R.; Longo, E.; Chiquito, A. J.; Pizani, P. S.; Varela, J. A.

2003-12-01

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV.

CuAlO2 and CuAl2O4 thin films obtained by stacking Cu and Al films using physical vapor deposition

NASA Astrophysics Data System (ADS)

Castillo-Hernández, G.; Mayén-Hernández, S.; Castaño-Tostado, E.; DeMoure-Flores, F.; Campos-González, E.; Martínez-Alonso, C.; Santos-Cruz, J.

2018-06-01

CuAlO2 and CuAl2O4 thin films were synthesized by the deposition of the precursor metals using the physical vapor deposition technique and subsequent annealing. Annealing was carried out for 4-6 h in open and nitrogen atmospheres respectively at temperatures of 900-1000 °C with control of heating and cooling ramps. The band gap measurements ranged from 3.3 to 4.5 eV. Electrical properties were measured using the van der Pauw technique. The preferred orientations of CuAlO2 and CuAl2O4 were found to be along the (1 1 2) and (3 1 1) planes, respectively. The phase percentages were quantified using a Rietveld refinement simulation and the energy dispersive X-ray spectroscopy indicated that the composition is very close to the stoichiometry of CuAlO2 samples and with excess of aluminum and deficiency of copper for CuAl2O4 respectively. High resolution transmission electron microscopy identified the principal planes in CuAlO2 and in CuAl2O4. Higher purities were achieved in nitrogen atmosphere with the control of the cooling ramps.

Perpendicular magnetic anisotropy of La0.67Sr0.33MnO3 thin films grown on CaMnO3 buffered SrTiO3

NASA Astrophysics Data System (ADS)

Wang, Zhi-Hong; Cristiani, G.; Habermeier, H.-U.; Zhang, Zhen-Rong; Han, Bao-Shan

2003-10-01

La0.67Sr0.33MnO3(LSMO) thin films were grown onto CaMnO3(CMO) buffered SrTiO3(100) by pulsed laser deposition. Because of the in-plane compressive strain induced by the lattice mismatch between CMO and LSMO, a perpendicular magnetic anisotropy (PMA) was obtained in the overlayer LSMO. Using the magnetic force microscopy, stripe magnetic domains in association with the PMA were observed at room temperature. Furthermore, the magnetoresistance with in-plane magnetic field parallel and vertical to the measuring current was studied at 5 and 300 K, and its correlation with the magnetic anisotropy has been discussed.

Temperature controlled evolution of monoclinic to super-tetragonal phase of epitaxial BiFeO3 thin films on La0.67Sr0.33MnO3 buffered SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Singh, Anar; Kaifeng, Dong; Chen, Jing-Sheng

2018-03-01

Epitaxial BiFeO3 thin films of 130nm were deposited by pulsed laser deposition (PLD) technique on La0.67Sr0.33MnO3 buffered SrTiO3 (001) substrate at various temperatures under different ambient oxygen pressures. Reciprocal space mapping reveals that, with decreasing temperature and oxygen pressure, the broadly reported monoclinic phase (MA) of BiFeO3 thin film initially transforms to a tetragonal phase (T1) with c/a =1.05 (1) in a narrow girth of deposition condition and then to a super-tetragonal phase (T2) with giant c/a = 1.24 (1), as confirmed by reciprocal space mapping using high resolution x-ray diffraction. The surface morphology of the films reveals the island growth of the BiFeO3 films deposited at low temperatures. We propose that the transformation from monoclinic to the super-tetragonal phase is essentially due to the manifestation of excess local strain as a result of the island growth. This study offers a recipe to grow the super-tetragonal phase of BiFeO3, with giant c/a =1.24 (1) which exhibits exceptionally large ferroelectric polarization, on ferromagnetic layer La0.67Sr0.33MnO3. This phase of BiFeO3 can be utilized for the ferroelectric control of magnetism at the interface of BiFeO3 and La0.67Sr0.33MnO3.

Coaxial line configuration for microwave power transmission study of YBa2Cu3O(7-delta) thin films

NASA Technical Reports Server (NTRS)

Chorey, C. M.; Miranda, F. A.; Bhasin, K. B.

1991-01-01

Microwave transmission measurements through YBa2Cu3O(7-delta) (YBCO) high-transition-temperature superconducting thin films on lanthanum aluminate (LaAlO3) have been performed in a coaxial line at 10 GHz. LaAlO3 substrates were ultrasonically machined into washer-shaped discs, polished, and coated with laser-ablated YBCO. These samples were mounted in a 50-ohm coaxial air line to form a short circuit. The power transmitted through the films as a function of temperature was used to calculate the normal state conductivity and the magnetic penetration depth for the films.

Influence of Oxygen Stoichiometry Variations on the Properties of CaMnO3 thin films

NASA Astrophysics Data System (ADS)

Goehringer, Tyler; Yong, Grace; Otouloumougoye, Brenda; Keshavarz, Camron; Sharma, Prahash; Tanyi, E. Kevin; Schaefer, David; Kolagani, Rajeswari

2013-03-01

The family of alkaline-earth doped rare earth manganese oxides RE1-xAExMnO3 exhibit a rich variety of electronic phases depending on the cation stoichiometry. In thin films of these materials, the oxygen stoichiometry is also a variable, and together with cation stoichiometry is known to play a key role in determining the equilibrium phase. The cation and oxygen stoichiometry variations influence electrical and magnetic properties through changes in the mixed valence state of Mn, i.e. the ratio of Mn3+ to Mn4+ ions. CaMnO3 is one of the end members of this family with x =1. Stoichiometric CaMnO3 is a canted antiferromagnetic insulator with the Mn ion in the Mn4+ valence state. We will present our results on the effects of oxygen content variation on the structural, electrical, and magnetoresistive properties CaMnO3 thin films grown by Pulsed Laser Deposition. These results will be compared to the effects of oxygen stoichiometry variation in thin films of its doped counter-part La1-xCaxMnO3. We will also discuss surface morphology changes associated with variation in oxygen stoichiometry which may be associated with different surface terminations. We acknowledge support from the NSF grant ECCS 1128586 at Towson University.

thin film capacitors

NASA Astrophysics Data System (ADS)

Bodeux, Romain; Gervais, Monique; Wolfman, Jérôme; Gervais, François

2014-09-01

CaCu3Ti4O12 (CCTO) thin films were grown by pulsed laser deposition on Pt and La0.9Sr1.1NiO4 (LSNO) bottom electrodes. The electrical characteristics of the CCTO/Pt and CCTO/LSNO Schottky junctions have been analyzed by impedance spectroscopy, capacitance-voltage (C-V) and current-voltage (I-V) measurements as a function of frequency (40 Hz-1 MHz) and temperature (300-475 K). Similar results were obtained for the two Schottky diodes. The conduction mechanism through the Schottky junctions was described using a thermionic emission model and the electrical parameters were determined. The strong deviation from the ideal I-V characteristics and the increase in capacitance at low frequency for -0.5 V bias are in agreement with the presence of traps near the interfaces. Results point toward the important effect of defects generated at the interface by deposition of CCTO.

Effects of substrate-induced-strain on the electrical properties and laser induced voltages of tilted La0.67Ca0.33MnO3 thin films

NASA Astrophysics Data System (ADS)

Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang

2013-07-01

La0.67Ca0.33MnO3 thin films have been prepared on vicinal cut LaAlO3, (LaAlO3)0.3-(SrAlTaO6)0.7, and SrTiO3 (001) substrates by pulsed laser deposition. The influence of the substrate on the electrical transport properties and laser induced voltage (LIV) effect of the films was investigated. The high insulator to metal transition temperature Tp (263.6 K) and large peak voltage of LIV signal (2.328 V) were observed in the film grown on LaAlO3 substrate. The compressive strain and large Seebeck coefficient anisotropy ΔS (3.62 μV/K) induced by LaAlO3 are thought to be responsible for this result.

Structural and magnetic analysis of Cu, Co substituted NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Sharma, Hakikat; Bala, Kanchan; Negi, N. S.

2016-05-01

In the present work we prepared NiFe2O4, Ni0.95Cu0.05Fe2O4 and Ni0.94Cu0.05Co0.01 Fe2O4 thin films by metallo-organic decomposition method (MOD) using spin coating technique. The thin films were analyzed by X-ray diffractometer (XRD) and Atomic force microscope (AFM) for structural studies. The XRD patterns confirmed the ferrite phase of thin films. From AFM, we analyzed surface morphology, calculated grain size (GS) and root mean square roughness (RMSR). Room temperature magnetic properties were investigated by vibrating sample magnetometer (VSM).

90° switching of polarization in La3+-doped SrBi2Ta2O9 thin films

NASA Astrophysics Data System (ADS)

Liu, J. S.; Zhang, S. R.; Zeng, H. Z.; Fei, W. D.; Du, S. Y.

2006-05-01

The crystal structure and polarization switching behavior of SrBi1.4La0.6Ta2O9 (SBLT) thin films have been studied by x-ray diffraction and piezoresponse force microscopy (PFM), respectively. Compared with SrBi2Ta2O9 (SBT), SBLT thin films show a reduced orthorhombic distortion. The polarization rotation of SBLT thin film, which is driven by negative and positive direct current (dc) biases, has been investigated by a combination of vertical and lateral PFM (VPFM and LPFM, respectively). After dc bias applications, the VPFM image is hardly changed, whereas the LPFM image experiences an obvious variation. It is believed that such difference is caused by 90° polarization switching. However, this kind of switching can be only realized by the exchange of a axis and b axis. By virtue of the reduced orthorhombic distortion, the a-b exchange in SBLT is easier than that in SBT. Unfortunately, stress is created due to the 90° polarization switching in SBLT thin films. The internal stress is found to increase with the repeated switching cycles, and so the polarization reorientation in SBLT is constrained. Thus, the fatigue resistance of SBLT thin films is not thought to be as good as that of SBT.

Determination of structural, mechanical and corrosion properties of Nb2O5 and (NbyCu 1-y)Ox thin films deposited on Ti6Al4V alloy substrates for dental implant applications.

PubMed

Mazur, M; Kalisz, M; Wojcieszak, D; Grobelny, M; Mazur, P; Kaczmarek, D; Domaradzki, J

2015-02-01

In this paper comparative studies on the structural, mechanical and corrosion properties of Nb2O5/Ti and (NbyCu1-y)Ox/Ti alloy systems have been investigated. Pure layers of niobia and niobia with a copper addition were deposited on a Ti6Al4V titanium alloy surface using the magnetron sputtering method. The physicochemical properties of the prepared thin films were examined with the aid of XRD, XPS SEM and AFM measurements. The mechanical properties (i.e., nanohardness, Young's modulus and abrasion resistance) were performed using nanoindentation and a steel wool test. The corrosion properties of the coatings were determined by analysis of the voltammetric curves. The deposited coatings were crack free, exhibited good adherence to the substrate, no discontinuity of the thin film was observed and the surface morphology was homogeneous. The hardness of pure niobium pentoxide was ca. 8.64GPa. The obtained results showed that the addition of copper into pure niobia resulted in the preparation of a layer with a lower hardness of ca. 7.79 GPa (for niobia with 17 at.% Cu) and 7.75 GPa (for niobia with 25 at.% Cu). The corrosion properties of the tested thin films deposited on the surface of titanium alloy depended on the composition of the thin layer. The addition of copper (i.e. a noble metal) to Nb2O5 film increased the corrosion resistance followed by a significant decrease in the value of corrosion currents and, in case of the highest Cu content, the shift of corrosion potential towards the noble direction. The best corrosion properties were obtained from a sample of Ti6Al4V coated with (Nb0.75Cu0.25)Ox thin film. It seems that the tested materials could be used in the future as protection coatings for Ti alloys in biomedical applications such as implants. Copyright © 2014. Published by Elsevier B.V.

Formation of high-Tc YBa2Cu3O(7-delta) films on Y2BaCuO5 substrate

NASA Astrophysics Data System (ADS)

Wang, W. N.; Lu, H. B.; Lin, W. J.; Yao, P. C.; Hsu, H. E.

1988-07-01

High-Tc superconducting YBa2Cu3O(7-delta) films have been successfully prepared on green Y2BaCuO5 (2115) ceramic substrate. The films have been formed by RF sputtering and screen printing with post annealing at 925 C. Regarding superconducting features, the sharp resistivity drop with Tc onset around 95 K (midpoint 84 K) and 99 K (midpoint 89 K) has been observed for RF sputtered and printed films respectively. Both films show the excellent adhesion towards the 2115 substrate. Powder X-ray diffraction profiles indicate a majority of 1237 phase with preferred orientation for RF sputtered thin film.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

Lattice structure and magnetization of LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Rata, A. D.; Herklotz, A.; Schultz, L.; Dörr, K.

2010-07-01

We investigate the structure and magnetic properties of thin films of the LaCoO3 compound. Thin films are deposited by pulsed laser deposition on various substrates in order to tune the strain from compressive to tensile. Single-phase (001) oriented LaCoO3 layers were grown on all substrates despite large misfits. The tetragonal distortion of the films covers a wide range from -2% to 2.8%. Our LaCoO3 films are ferromagnetic with Curie temperature around 85 K, contrary to the bulk. The total magnetic moment is below 1 μ B /Co3+, a value relatively small for an exited spin-state of the Co3+ ions, but comparable to values reported in literature. A correlation of strain states and magnetic moment of Co3+ ions in LaCoO3 thin films is observed.

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

NASA Astrophysics Data System (ADS)

Warner, J. D.; Meola, J. E.; Jenkins, K. A.; Bhasin, K. B.

1990-04-01

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

NASA Astrophysics Data System (ADS)

Katiyar, R. K.; Sharma, Y.; Barrionuevo, D.; Kooriyattil, S.; Pavunny, S. P.; Young, J. S.; Morell, G.; Weiner, B. R.; Katiyar, R. S.; Scott, J. F.

2015-02-01

Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ˜0.20 V and ˜1.35 mA/cm2, respectively. The band gap of the films was determined to be ˜2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PV properties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

Pulsed Laser Deposition Growth of Delafossite (CuFeO2) thin films and multilayers

NASA Astrophysics Data System (ADS)

Joshi, Toyanath; Ferrari, Piero; Borisov, Pavel; Cabrera, Alejandro; Lederman, David

2014-03-01

Owing to its narrow band gap (<2 eV) and p-type conductivity delafossite CuFeO2 is attractive for applications in the field of solar energy conversion. Obtaining pure phase CuFeO2 thin films, however, is relatively difficult. It is necessary to maintain the lowest possible Cu valency (+1) in order to avoid forming the comparably stable spinel compound CuFe2O4. We present a systematic study of the pulsed laser deposition (PLD) growth conditions for epitaxial (00.1) oriented CuFeO2 thin films on Al2O3 (00.1) substrates. The secondary impurity phase, CuFe2O4, was removed completely by optimizing the growth conditions. RHEED, XRD and TEM showed that the pure phase delafossite films are highly epitaxial to the substrate. The chemical purity was verified by Raman and XPS. The indirect bandgap of 1.15 eV was measured using infrared reflectivity, and is in agreement with the CuFeO2 bulk value. Finally, we discuss the growth and structural characterization of delafossite multilayers, CuFeO2/CuGaO2. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the Microelectronics Advanced Research Corporation (Contract # 2013-MA-2382) at WVU.

Strained enabled Ferroelectricity in CaTiO3 Thin Films Probed by Nonlinear Optics and Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Vlahos, Eftihia; Kumar, Amit; Denev, Sava; Brooks, Charles; Schlom, Darrell; Eklund, Carl-Johan; Rabe, Karin M.; Fennie, Craig J.; Gopalan, Venkatraman

2009-03-01

Calcium titanate, CaTiO3 is not a ferroelectric in its bulk form. However, first principles calculations predict that biaxially tensile strained CaTiO3 thin films should become ferroelectric. Here, we indeed confirm that strained CaTiO3 films become ferroelectric with a Curie temperature of ˜125K. Optical second harmonic generation (SHG) measurements, polarization studies, and in-situ electric-field measurements for a number of films with different strain values will be presented: CaTiO3/DyScO3(110), CaTiO3/SrTiO3 (100),CaTiO3/GdScO3/NdGaO3(110), CaTiO3/LaSrAlO3(001) as well as for a single crystal CaTiO3. From these studies, we conclude that strained CaTiO3 films are ferroelectric with a point group symmetry of mm2, and show reversible domain switching characteristics under an electric field. We also present results of variable temperature piezoelectric force microscopy for imaging the polar domains in the ferroelectric phase. These results suggest that strain is a valuable tool for inducing polar, long range ferroelectric order in even non-polar ceramic materials such as CaTiO3.

Misfit layered Ca{sub 3}Co{sub 4}O{sub 9} as a high figure of merit p-type transparent conducting oxide film through solution processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aksit, M.; Kolli, S. K.; Slauch, I. M.

Ca{sub 3}Co{sub 4}O{sub 9} thin films synthesized through solution processing are shown to be high-performing, p-type transparent conducting oxides (TCOs). The synthesis method is a cost-effective and scalable process that consists of sol-gel chemistry, spin coating, and heat treatments. The process parameters can be varied to produce TCO thin films with sheet resistance as low as 5.7 kΩ/sq (ρ ≈ 57 mΩ cm) or with average visible range transparency as high as 67%. The most conductive Ca{sub 3}Co{sub 4}O{sub 9} TCO thin film has near infrared region optical transmission as high as 85%. The figure of merit (FOM) for the top-performing Ca{sub 3}Co{submore » 4}O{sub 9} thin film (151 MΩ{sup −1}) is higher than FOM values reported in the literature for all other solution processed, p-type TCO thin films and higher than most others prepared by physical vapor deposition and chemical vapor deposition. Transparent conductivity in misfit layered oxides presents new opportunities for TCO compositions.« less

Fabrication and performance of a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O thin film detector

NASA Astrophysics Data System (ADS)

Zhou, Wei; Yin, Yiming; Yao, Niangjuan; Jiang, Lin; Qu, Yue; Wu, Jing; Gao, Y. Q.; Huang, Jingguo; Huang, Zhiming

2018-01-01

A thermal sensitive infrared and THz detector was fabricated by a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films. The Mn-Co-Ni-O material, as one type of transition metal oxides, has long been used as a candidate for thermal sensors or infrared detectors. The resistivity of a most important Mn-Co-Ni-O thin film, Mn1. 96Co0.96Ni0.48O4(MCN) , is about 200 Ω·cm at room temperature, which ranges about 2 orders larger than that of VOx detectors. Therefore, the thickness of a typical squared Mn-Co-Ni-O IR detector should be about 10 μm, which is too large for focal plane arrays applications. To reduce the resistivity of Mn-Co-Ni-O thin film, 1/6 of Co element was replaced by Cu. Meanwhile, a cover layer of MCN film was deposited onto the Mn-Co-Ni-Cu-O film to improve the long term stability. The detector fabricated by the double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films showed large response to blackbody and 170 GHz radiation. The NEP of the detector was estimated to be the order of 10-8 W/Hz0. 5. By applying thermal isolation structure and additional absorption materials, the detection performance can be largely improved by 1-2 orders according to numerical estimation. The double layered Mn-Co-Ni-O film detector shows great potentials in applications in large scale IR detection arrays, and broad-band imaging.

Synthesis and photosensor study of as-grown CuZnO thin film by facile chemical bath deposition

NASA Astrophysics Data System (ADS)

Gubari, Ghamdan M. M.; Ibrahim Mohammed S., M.; Huse, Nanasaheb P.; Dive, Avinash S.; Sharma, Ramphal

2018-05-01

We have successfully deposited CuZnO thin film on a glass substrate by facile chemical bath deposition method at 85 °C for 1 hr. Structural, topographical, Optical and Electrical properties of the prepared Thin Films were investigated by XRD, Raman spectrum, AFM, UV-Visible Spectrophotometer and I-V Measurement System respectively. The X-ray diffraction (XRD) pattern confirmed the formation of the CuZnO composition when compared with standard JCPDS card (JCPDF # 75-0576 & # 36-1451). The Raman analysis shows a major peak at 458 cm-1 with E2 (High) vibrational mode. AFM images revealed uniform deposition over an entire glass substrate with 66.2 nm average roughness of the film. From the optical absorption spectrum, clear band edge around ˜407 nm was observed which results in a wide energy band gap of ˜3.04 eV. The electrical properties were measured at room temperature in the voltage range ±5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ˜99.9 % for 260 W.

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Determination of surface resistance and magnetic penetration depth of superconducting YBa2Cu3O(7-delta) thin films by microwave power transmission measurements

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Warner, J. D.; Miranda, F. A.; Gordon, W. L.; Newman, H. S.

1991-01-01

A novel waveguide power transmission measurement technique was developed to extract the complex conductivity of superconducting thin films at microwave frequencies. The microwave conductivity was taken of two laser ablated YBa2Cu3O(7-delta) thin films on LaAlO3 with transition temperatures of approximately 86.3 and 82 K, respectively, in the temperature range 25 to 300 K. From the conductivity values, the penetration depth was found to be approximately 0.54 and 0.43 micron, and the surface resistance (R sub s) to be approximately 24 and 36 micro-Ohms at 36 GHz and 76 K for the two films under consideration. The R sub s values were compared with those obtained from the change in the Q-factor of a 36 GHz Te sub 011-mode (OFHC) copper cavity by replacing one of its end walls with the superconducting sample. This technique allows noninvasive characterization of high transition superconducting thin films at microwave frequencies.

Determination of surface resistance and magnetic penetration depth of superconducting YBa2Cu3O(7-delta) thin films by microwave power transmission measurements

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Warner, J. D.; Miranda, F. A.; Gordon, W. L.; Newman, H. S.

1990-01-01

A novel waveguide power transmission measurement technique was developed to extract the complex conductivity of superconducting thin films at microwave frequencies. The microwave conductivity was taken of two laser ablated YBa2Cu3O(7-delta) thin films on LaAlO3 with transition temperatures of approx. 86.3 and 82 K, respectively, in the temperature range 25 to 300 K. From the conductivity values, the penetration depth was found to be approx. 0.54 and 0.43 micron, and the surface resistance (R sub s) to be approx. 24 and 36 micro-Ohms at 36 GHz and 76 K for the two films under consideration. The R sub s values were compared with those obtained from the change in the Q-factor of a 36 GHz Te sub 011-mode (OFHC) copper cavity by replacing one of its end walls with the superconducting sample. This technique allows noninvasive characterization of high transition temperature superconducting thin films at microwave frequencies.

Magnetic penetration depth of YBa2Cu3O(7-delta) thin films determined by the power transmission method

NASA Technical Reports Server (NTRS)

Heinen, Vernon O.; Miranda, Felix A.; Bhasin, Kul B.

1992-01-01

A power transmission measurement technique was used to determine the magnetic penetration depth (lambda) of YBa2Cu3O(7-delta) superconducting thin films on LaAlO3 within the 26.5 to 40.0 GHz frequency range, and at temperatures from 20 to 300 K. Values of lambda ranging from 1100 to 2500 A were obtained at low temperatures. The anisotropy of lambda was determined from measurements of c-axis and a-axis oriented films. An estimate of the intrinsic value of lambda of 90 +/- 30 nm was obtained from the dependence of lambda on film thickness. The advantage of this technique is that it allows lambda to be determined nondestructively.

Strain dependence of the electronic properties of LaTiO3 thin films

NASA Astrophysics Data System (ADS)

Moon, S. J.; Kim, Y. S.

2014-11-01

We report on the transport and the core-level X-ray photoemission spectroscopy data of fully-strained LaTiO3 thin films grown on GdScO3 and SrTiO3 substrates. We observed that LaTiO3 thin film grown on GdScO3 showed insulating behavior but that grown on SrTiO3 exhibited a metallic character. We found that while the La 4 d photoemission spectra of the two films were nearly the same, their Ti 2 p and O 1 s data revealed a difference. Our results suggest that strain-induced changes in the Ti-O bonding play an important role in the electronic properties of LaTiO3 thin films.

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Chien, Nguyen Viet; Van Duy, Nguyen; Vuong, Dang Duc; Lam, Nguyen Huu; Hoa, Nguyen Duc; Van Hieu, Nguyen; Chien, Nguyen Duc

2015-01-01

The detection of H2S, an important gaseous molecule that has been recently marked as a highly toxic environmental pollutant, has attracted increasing attention. We fabricate a wafer-scale SnO2 thin film sensitized with CuO islands using microelectronic technology for the improved detection of the highly toxic H2S gas. The SnO2-CuO island sensor exhibits significantly enhanced H2S gas response and reduced operating temperature. The thickness of CuO islands strongly influences H2S sensing characteristics, and the highest H2S gas response is observed with 20 nm-thick CuO islands. The response value (Ra/Rg) of the SnO2-CuO island sensor to 5 ppm H2S is as high as 128 at 200 °C and increases nearly 55-fold compared with that of the bare SnO2 thin film sensor. Meanwhile, the response of the SnO2-CuO island sensor to H2 (250 ppm), NH3 (250 ppm), CO (250 ppm), and LPG (1000 ppm) are low (1.3-2.5). The enhanced gas response and selectivity of the SnO2-CuO island sensor to H2S gas is explained by the sensitizing effect of CuO islands and the extension of electron depletion regions because of the formation of p-n junctions.

Sol-gel synthesis of mesoporous CaCu{sub 3}Ti{sub 4}O{sub 12} thin films and their gas sensing response

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parra, R., E-mail: rparra@fi.mdp.edu.a; Savu, R.; Ramajo, L.A.

2010-06-15

A new sol-gel synthesis procedure of stable calcium copper titanate (CaCu{sub 3}Ti{sub 4}O{sub 12}-CCTO) precursor sols for the fabrication of porous films was developed. The composition of the sol was selected in order to avoid the precipitation of undesired phases; ethanol was used as solvent, acetic acid as modifier and poly(ethyleneglycol) as a linker agent. Films deposited by spin-coating onto oxidized silicon substrates were annealed at 700 {sup o}C. The main phase present in the samples, as detected by X-ray diffraction and Raman spectroscopy, was CaCu{sub 3}Ti{sub 4}O{sub 12}. Scanning electron microscopy analysis showed that mesoporous structures, with thicknesses betweenmore » 200 and 400 nm, were developed as a result of the processing conditions. The films were tested regarding their sensibility towards oxygen and nitrogen at atmospheric pressure using working temperatures from 200 to 290 {sup o}C. The samples exhibited n-type conductivity, high sensitivity and short response times. These characteristics indicate that CCTO mesoporous structures obtained by sol-gel are suitable for application in gas sensing. - Graphical abstract: A sol-gel synthesis procedure toward stable CaCu{sub 3}Ti{sub 4}O{sub 12}-precursor sols avoiding the precipitation of undesired compounds is proposed. Films deposited by spin-coating onto oxidized silicon substrates were annealed at 700 {sup o}C. The thickness varied between 200 and 400 nm depending on sol composition. The films, tested as gas sensors for O{sub 2}, showed n-type conductivity, good sensitivity and short response times.« less

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, D.S.; Hietala, V.M.; Hohenwarter, G.K.G.; Martens, J.S.; Plut, T.A.; Tigges, C.P.; Vawter, G.A.; Zipperian, T.E.

1994-10-25

A process is disclosed for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO[sub 3] crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O[sub 3], followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry. 8 figs.

Optical properties of La{sub 2}CuO{sub 4} and La{sub 2-x}Ca{sub x}CuO{sub 4} crystallites in UV-vis-NIR region synthesized by sol-gel process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Yifeng; Huang Jianfeng, E-mail: hjfnpu@163.com; Cao Liyun

2012-02-15

La{sub 2}CuO{sub 4} and La{sub 2-x}Ca{sub x}CuO{sub 4} crystallites were prepared via a simple sol-gel process. The as-prepared La{sub 2}CuO{sub 4} and La{sub 2} {sub -x}Ca{sub x}CuO{sub 4} crystallites were characterized by X-ray diffraction, transmission electron microscope and UV-vis-NIR spectra. Results show that the grain size of La{sub 2}CuO{sub 4} crystallites increases with the increase of heat treatment temperature from 600 Degree-Sign C to 800 Degree-Sign C. Optical properties show that La{sub 2}CuO{sub 4} crystallites have broad absorption both in the UV-vis region and in the NIR region. The band gap of the as-prepared crystallites decreases from 1.367 eV tomore » 1.284 eV with the increase of calcination temperature from 600 Degree-Sign C to 800 Degree-Sign C. In the series of La{sub 2-x}Ca{sub x}CuO{sub 4} compounds (x = 0.05, 0.08, 0.10, 0.12, 0.15 and 0.20), all of the samples exhibit an orthogonal crystal structure and the solubility limit of Ca{sup 2+} in La{sub 2}CuO{sub 4} is within the range of x = 0.12-0.15. In the whole UV-vis-NIR region, La{sub 2-x}Ca{sub x}CuO{sub 4} crystallites exhibit a broad absorption and the corresponding band gap first increases and then decreases with increasing of Ca{sup 2+} content. - Highlights: Black-Right-Pointing-Pointer The optical band gap can be tuned by adjusting the grain size and Ca{sup 2+} content. Black-Right-Pointing-Pointer La{sub 2}CuO{sub 4} crystallites exhibit a broad absorption band both in the UV-vis region and in the NIR region. Black-Right-Pointing-Pointer The band gap increases from 1.284 eV to 1.319 eV with the decrease of heat treatment temperature. Black-Right-Pointing-Pointer In the whole UV-vis-NIR region, the La{sub 2-x}Ca{sub x}CuO{sub 4} crystallites displayed a broad absorption. Black-Right-Pointing-Pointer The band gap of La{sub 2-x}Ca{sub x}CuO{sub 4} increases linearly with doping level when 0 {<=} x {<=} 0.12.« less

Detection of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases in co-evaporated Cu2ZnSnSe4 thin-films

NASA Astrophysics Data System (ADS)

Schwarz, Torsten; Marques, Miguel A. L.; Botti, Silvana; Mousel, Marina; Redinger, Alex; Siebentritt, Susanne; Cojocaru-Mirédin, Oana; Raabe, Dierk; Choi, Pyuck-Pa

2015-10-01

Cu2ZnSnSe4 thin-films for photovoltaic applications are investigated using combined atom probe tomography and ab initio density functional theory. The atom probe studies reveal nano-sized grains of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 composition, which cannot be assigned to any known phase reported in the literature. Both phases are considered to be metastable, as density functional theory calculations yield positive energy differences with respect to the decomposition into Cu2ZnSnSe4 and ZnSe. Among the conceivable crystal structures for both phases, a distorted zinc-blende structure shows the lowest energy, which is a few tens of meV below the energy of a wurtzite structure. A band gap of 1.1 eV is calculated for both the Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases. Possible effects of these phases on solar cell performance are discussed.

Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

NASA Technical Reports Server (NTRS)

Valco, G. J.; Rohrer, N. J.; Warner, J. D.; Bhasin, K. B.

1989-01-01

The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

The effect of oxidant on resputtering of Bi from Bi-Sr-Ca-Cu-O films

NASA Astrophysics Data System (ADS)

Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

1991-09-01

The type and partial pressure of oxidant mixed with argon can affect the selective resputtering of Bi in composite-target, magnetron-sputtered Bi-Sr-Ca-Cu-O films. Comparative studies using oxygen and ozone show that ozone is a more potent oxidant, as well as a more potent source of resputterers, than is oxygen. Severe resputtering from ozone is significantly reduced by a -40 V potential on the sample block. We suggest that oxygen causes resputtering by forming O2(+)p , which interacts with the target to produce energetic O(-). In contrast, ozone may form lower-energy O(-) by electron impact in the dark space. Negative oxygen ions from the target itself may be responsible for a background resputtering effect. Our results and those found for Y-Ba-Cu-O by others are comparable. Bi in Bi-Sr-Ca-Cu-O behaves as Ba in Y-Ba-Cu-O, with regard to selective resputtering; furthermore, the response of Sr, Ca, and Cu to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for Cu in Y-Ba-Cu-O.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

High Tc superconducting IR detectors from Y-Ba-Cu-O thin films

NASA Technical Reports Server (NTRS)

Lindgren, M.; Ahlberg, H.; Danerud, M.; Larsson, A.; Eng, M.

1990-01-01

A thin-film high-Tc superconducting multielement optical detector made of Y-Ba-Cu-O has been designed and evaluated using optical pulses from a diode laser (830 nm) and a Q-switched CO2-laser (10.6 microns). Different thin films have been tested. A laser deposited film showed the strongest response amplitude for short pulses and responded to an ultrafast, 50 ps wide pulse. Comparisons between dR/dT and response as a function of temperature indicated, however, a bolometric response.

Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films.

PubMed

Liu, Suilin; Wu, Zhiheng; Zhang, Yake; Yao, Zhiqiang; Fan, Jiajie; Zhang, Yiqiang; Hu, Junhua; Zhang, Peng; Shao, Guosheng

2015-01-07

We report here a reliable and reproducible single-step (without post-annealing) fabrication of phase-pure p-type rhombohedral CuAlO2 (r-CuAlO2) thin films by reactive magnetron sputtering. The dependence of crystallinity and phase compositions of the films on the growth temperature was investigated, revealing that highly-crystallized r-CuAlO2 thin films could be in situ grown in a narrow temperature window of ∼940 °C. Optical and electrical property studies demonstrate that (i) the films are transparent in the visible light region, and the bandgaps of the films increased to ∼3.86 eV with the improvement of crystallinity; (ii) the conductance increased by four orders of magnitude as the film was evolved from the amorphous-like to crystalline structure. The predominant role of crystallinity in determining CuAlO2 film properties was demonstrated to be due to the heavy anisotropic characteristics of the O 2p-Cu 3d hybridized valence orbitals.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

Effect of annealing on structure, morphology and optoelectronic properties of nanocrystalline CuO thin films

NASA Astrophysics Data System (ADS)

Jundale, D. M.; Pawar, S. G.; Patil, S. L.; Chougule, M. A.; Godse, P. R.; Patil, V. B.

2011-10-01

The nanocrystalline CuO thin films were prepared on glass substrates by the sol-gel method. The structural, morphological, electrical and optical properties of CuO thin films, submitted to an annealing treatment in the 400-700 °C ranges are studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe Technique and UV-visible spectroscopic. XRD measurements show that all the films are crystallized in the monoclinic phase and present a random orientation. Four prominent peaks, corresponding to the (110) phase (2θ≈32.70°), (002) phase (2θ≈35.70°), (111) phase (2θ≈38.76°) and (202) phase (2θ≈49.06°) appear on the diffractograms. The crystallite size increases with increasing annealing temperature. These modifications influence the microstructure, electrical and optical properties. The optical band gap energy decreases with increasing annealing temperature. These mean that the optical quality of CuO films is improved by annealing.

Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

NASA Astrophysics Data System (ADS)

Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

1991-10-01

We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O+2, which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O.

Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition.

PubMed

Jiang, Xishun; Zhang, Miao; Shi, Shiwei; He, Gang; Song, Xueping; Sun, Zhaoqi

2014-01-01

Cuprous oxide (Cu2O) thin films were prepared by using electrodeposition technique at different applied potentials (-0.1, -0.3, -0.5, -0.7, and -0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV-vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

NASA Astrophysics Data System (ADS)

Yuan, Feifei; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina; Hühne, Ruben; Schultz, Ludwig; Shi, Zhixiang

2015-06-01

FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc(θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc(θ) peaks for H||c were observed in films on CaF2 and LaAlO3. Jc(θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau approach with appropriate anisotropy ratio γJ. The scaling parameter γJ is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates.

Millimeter wave transmission studies of YBa2Cu3O7-delta thin films in the 26.5 to 40.0 GHz frequency range

NASA Technical Reports Server (NTRS)

Miranda, F. A.; Gordon, W. L.; Bhasin, K. B.; Heinen, V. O.; Warner, J. D.; Valco, G. J.

1989-01-01

Millimeter wave transmission measurements through YBa2Cu3O(7-delta) thin films on MgO, ZrO2 and LaAlO3 substrates, are reported. The films (approx. 1 micron) were deposited by sequential evaporation and laser ablation techniques. Transition temperatures T sub c, ranging from 89.7 K for the Laser Ablated film on LaAlO3 to approximately 72 K for the sequentially evaporated film on MgO, were obtained. The values of the real and imaginary parts of the complex conductivity, sigma 1 and sigma 2, are obtained from the transmission data, assuming a two fluid model. The BCS approach is used to calculate values for an effective energy gap from the obtained values of sigma sub 1. A range of gap values from 2 DELTA o/K sub B T sub c = 4.19 to 4.35 was obtained. The magnetic penetration depth is evaluated from the deduced values of sigma 2. These results are discussed together with the frequency dependence of the normalized transmission amplitude, P/P sub c, below and above T sub c.

Structural and magnetic analysis of Cu, Co substituted NiFe{sub 2}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Hakikat; Bala, Kanchan; Negi, N. S.

2016-05-23

In the present work we prepared NiFe{sub 2}O{sub 4}, Ni{sub 0.95}Cu{sub 0.05}Fe{sub 2}O{sub 4} and Ni{sub 0.94}Cu{sub 0.05}Co{sub 0.01} Fe{sub 2}O{sub 4} thin films by metallo-organic decomposition method (MOD) using spin coating technique. The thin films were analyzed by X-ray diffractometer (XRD) and Atomic force microscope (AFM) for structural studies. The XRD patterns confirmed the ferrite phase of thin films. From AFM, we analyzed surface morphology, calculated grain size (GS) and root mean square roughness (RMSR). Room temperature magnetic properties were investigated by vibrating sample magnetometer (VSM).

Reduced anti-ferromagnetism promoted by Zn 3d 10 substitution at CuO 2 planar sites of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4O 12-δ superconductors

NASA Astrophysics Data System (ADS)

Mumtaz, M.; Khan, Nawazish A.

2009-11-01

The role of charge carriers in ZnO 2/CuO 2 planes of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4-yZn yO 12-δ material in bringing about superconductivity has been explained. Due to suppression of anti-ferromagnetic order with Zn 3d 10 ( S=0) substitution at Cu 3d 9(S={1}/{2}) sites in the inner CuO 2 planes of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4O 12-δ superconductor, the distribution of charge carriers becomes homogeneous and optimum, which is evident from the enhanced superconductivity parameters. The decreased c-axis length with the increase of Zn doping improves interlayer coupling and hence the three dimensional (3D) conductivity in the unit cell is enhanced. Also the softening of phonon modes with the increased Zn doping indicates that the electron-phonon interaction has an essential role in the mechanism of high- Tc superconductivity in these compounds.

High-T sub c thin films on low microwave loss alkaline-rare-earth-aluminate crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolewski, R.; Gierlowski, P.; Kula, W.

1991-03-01

This paper reports on the alkaline-rare-earth aluminates (K{sub 2}NiF{sub 4}-type perovskites) which are an excellent choice as the substrate material for the growth of high-T{sub c} thin films suitable for microwave and far-infrared applications. The CaNdAlO{sub 4}, and SrLaAlO{sub 4} single crystals have been grown by Czochralski pulling and fabricated into the form of (001) oriented wafers. The Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O films deposited on these substrates by a single-target magnetron sputtering exhibited very good superconducting and structural properties.

Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

NASA Astrophysics Data System (ADS)

Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

2017-08-01

In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

Detection of s-wave superconductivity on monolayer CuO2 films on Bi2Sr2CaCu2O8+δ.

NASA Astrophysics Data System (ADS)

Wang, Yang; Zhong, Yong; Han, Sha; Lv, Yanfeng; Wang, Wenlin; Zhang, Ding; Ding, Hao; Zhang, Yimin; Wang, Lili; He, Ke; Song, Canli; Ma, Xucun; Xue, Qikun

High temperature superconductivity emerges when the CuO2 layer touches the doped charge reservoir blocks. The redistributed charge carriers at these interfaces condense into coherent Cooper pairs, albeit the exact underlying mechanism is still highly controversial. Targeting at this, we have mimicked the CuO2/charge reservoir interface by depositing the monolayer CuO2 films on optimal doped Bi2Sr2CaCu2O8+δ substrates. Direct investigation on these superconducting CuO2 films, however, yields results in stark contrast with the common recognition. Despite of the well-known V shaped pseudogap, a U shaped gap is identified. This U shaped gap disappears at TC and is indifference to K, Cs and Ag adsorbates, in line with the traditional s-wave superconductivity. In view of these results, we propose that superconductivity in cuprates may indeed stem from the modulation doping induced two dimensional hole liquid, which is confined in the CuO2 layers. NSF and MOST of China.

Calcium copper-titanate thin film growth: tailoring of the operational conditions through nanocharacterization and substrate nature effects.

PubMed

Lo Nigro, Raffaella; Toro, Roberta G; Malandrino, Graziella; Fragalà, Ignazio L; Losurdo, Maria; Giangregorio, Michelaria M; Bruno, Giovanni; Raineri, Vito; Fiorenza, Patrick

2006-09-07

A novel approach based on a molten multicomponent precursor source has been applied for the MOCVD fabrication of high-quality CaCu(3)Ti(4)O(12) (CCTO) thin films on various substrates. The adopted in situ strategy involves a molten mixture consisting of Ca(hfa)(2).tetraglyme, Ti(tmhd)(2)(O-iPr)(2), and Cu(tmhd)(2) [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = 2,5,8,11,14-pentaoxapentadecane; Htmhd = 2,2,6,6-tetramethyl-3,5-heptandione; O-iPr = isopropoxide] precursors. Film structural and morphological characterizations have been carried out by several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)], and in particular the energy filtered TEM mapping and X-ray energy dispersive (EDX) analysis in TEM mode provided a suitable correlation between nanostructural properties of CCTO films and deposition conditions and/or the substrate nature. Correlation between the nanostructure and optical/dielectric properties has been investigated exploiting spectroscopic ellipsometry.

Compositional ratio effect on the surface characteristics of CuZn thin films

NASA Astrophysics Data System (ADS)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Ferromagnetism in tetragonally distorted LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Mehta, Virat Vasav; Liberati, Marco; Wong, Franklin J.; Chopdekar, Rajesh Vilas; Arenholz, Elke; Suzuki, Yuri

2009-04-01

Thin films of epitaxial LaCoO3 were synthesized on SrTiO3 and (La ,Sr)(Al,Ta)O3 substrates, varying the oxygen background pressure in order to evaluate the impact of epitaxial growth as well as oxygen vacancies on the long range magnetic order. The epitaxial constraints from the substrate impose a tetragonal distortion compared to the bulk form. X-ray absorption and x-ray magnetic circular dichroism measurements confirmed that the ferromagnetism arises from the Co ions and persists through the entire thickness of the film. It was found that for the thin films to show ferromagnetic order they have to be grown under the higher oxygen pressures. A correlation of the structure and magnetism suggests that the tetragonal distortions induce the ferromagnetism.

Physical Characterization of Cu-Ni-P Thin Films aiming at Cu/Cu-Ni-P Thermocouples

NASA Astrophysics Data System (ADS)

Tomachevski, F.; Sparvoli, M.; dos Santos Filho, S. G.

2015-03-01

Cu-Ni-P thin films have a high-thermoelectric power, which allows the fabrication of very sensitive heat-flux sensors based on planar technology. In this work, (100) silicon surfaces were pre-activated in a diluted hydrofluoric acid solution containing PdCl2. Following, Cu-Ni-P thin films were chemically deposited using an alkaline chemical bath containing 15 g/l NiSO4.6H2O; 0.2 g/l CuSO4.5H2O; 15 g/l Na2HPO2.H2O and 60 g/l Na3C6H5O7.2H2O at temperature of 80 °C where NH4OH was added until pH was 8.0. It was noteworthy that the stoichiometric percentages of Ni and Cu vary substantially for immersion times in the range of 1 to 3 min and they become almost stable at 50% and 35%, respectively, when the immersion time is higher than 3 min. In addition, the percentage of P remains almost constant around 1718 % for all the immersion times studied. On the other hand, the sheet resistance also varies substantially for immersion times in the range of 1 to 3 min. Based on the surface morphology, smaller grains with size in the range of 0.02 to 0.1 μm are initially grown on the silicon surface and exposed regions of silicon without deposits are also observed for immersion times in the range of 1 to 3min. Therefore, the discontinuities and non uniformities of the films are promoting, respectively, the observed behaviours of sheet resistance and stoichiometry.

YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

NASA Technical Reports Server (NTRS)

Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

1993-01-01

Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

2013-12-01

We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

NASA Astrophysics Data System (ADS)

Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

2016-12-01

TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

Strain and Ni substitution induced ferromagnetism in LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Ashok; Kumar, Vinod; Kumar, Rajesh; Kumar, Ravi

2018-05-01

We have grown epitaxial strained films of LaCoO3 and LaCo0.7Ni0.3O3 on LaAlO3 (100) substrate via pulsed laser deposition. Superconducting quantum interference device magnetization measurements show that, unlike its bulk counterpart, the ground state of the strained LaCoO3 on LAO is ferromagnetic. The saturation magnetization has been found increase strongly from a value of 118 emu/cm3 to 350 emu/ cm3 for Ni substituted thin film. Present study reveals that strain can stabilize FM order in these thin films down to low temperature, which can further be tuned to higher saturation magnetization with the Ni substitution.

Synthesis from separate oxide targets of high quality La2-xSrxCuO4 thin films and dependence with doping of their superconducting transition width

NASA Astrophysics Data System (ADS)

Cotón, N.; Mercey, B.; Mosqueira, J.; Ramallo, M. V.; Vidal, F.

2013-07-01

A series of superconducting La2-xSrxCuO4 thin films, with 0.09 ≲ x ≲ 0.22, is grown over (100)SrTiO3 substrates by means of a novel pulsed laser deposition method devised to increase the homogeneity and control of doping. We employ two separate parent oxide targets that receive ablation shots at arbitrary computer-controlled relative rates, instead of the conventional procedure that uses a single target whose doping determines the one of the film. We characterize the films both through conventional techniques (XRD, SEM, AFM and EDX) and by measuring their superconducting transition with a high-sensitivity SQUID magnetometer. The latter allows one to determine not only their average critical temperatures {\\bar {T}}_{{c}}(x) but also their dispersions due to inhomogeneities, ΔTc(x). For {\\bar {T}}_{{c}}(x) we obtain the conventional parabolic law centered at x = 0.16, plus a Gaussian depression near x = 1/8 with a {\\bar {T}}_{{c}}-height of about 5 K and x-width about 0.03. For ΔTc(x) we obtain, for all the dopings, values among the lowest reported up to now for La2-xSrxCuO4. The ΔTc(x) dependence can be explained in terms of the unavoidable randomness of the positioning of the Sr ions (the so-called intrinsic chemical inhomogeneity) and a separate residual Tc-inhomogeneity contribution of the order of 0.5 K, this last associated with the samples’ structural inhomogeneities and films’ substrate.

Coulomb-Gas scaling law for a superconducting Bi(2+y)Sr(2-x-y)La(x)CuO(6+delta) thin films in magnetic fields

PubMed

Zhang; Deltour; Zhao

2000-10-16

The electrical transport properties of epitaxial superconducting Bi(2+y)Sr(2-x-y)La(x)CuO(6+delta) thin films have been studied in magnetic fields. Using a modified Coulomb-gas scaling law, we can fit all the magnetic field dependent low resistance data with a universal scaling curve, which allows us to determine a relation between the activation energy of the thermally activated flux flow resistance and the characteristic temperature scaling parameters.

Effect of film thickness on NO2 gas sensing properties of sprayed orthorhombic nanocrystalline V2O5 thin films

NASA Astrophysics Data System (ADS)

Mane, A. A.; Moholkar, A. V.

2017-09-01

The nanocrystalline V2O5 thin films with different thicknesses have been grown onto the glass substrates using chemical spray pyrolysis (CSP) deposition method. The XRD study shows that the films exhibit an orthorhombic crystal structure. The narrow scan X-ray photoelectron spectrum of V-2p core level doublet gives the binding energy difference of 7.3 eV, indicating that the V5+ oxidation state of vanadium. The FE-SEM micrographs show the formation of nanorods-like morphology. The AFM micrographs show the high surface area to volume ratio of nanocrystalline V2O5 thin films. The optical study gives the band gap energy values of 2.41 eV, 2.44 eV, 2.47 eV and 2.38 eV for V2O5 thin films deposited with the thicknesses of 423 nm, 559 nm, 694 nm and 730 nm, respectively. The V2O5 film of thickness 559 nm shows the NO2 gas response of 41% for 100 ppm concentration at operating temperature of 200 °C with response and recovery times of 20 s and 150 s, respectively. Further, it shows the rapid response and reproducibility towards 10 ppm NO2 gas concentration at 200 °C. Finally, NO2 gas sensing mechanism based on chemisorption process is discussed.

Understanding the Origin of Ferromagnetism in Strained LaCoO3 Thin Films

NASA Astrophysics Data System (ADS)

Ma, J. X.; Shi, J.; Freeland, J. W.

2009-03-01

Using strain to control the behavior of strongly correlated materials offers new opportunities to control fundamental properties. For the case of magnetism, LaCoO3 offers the ability to use strain through thin film growth to manipulate directly the spin-state of Co in this system. Here we present the results of a detailed polarized x-ray spectroscopy study of LaCoO3 thin films grown on SrTiO3(001) and LaAlO3 (001) substrates. X-ray diffraction from 25 nm thin films confirm the films are fully strained in both cases and, for films under tensile strain, total moment magnetometry shows a clear transition to ferromagnetic state at ˜80K. X-ray absorption shows that the films grown from a LaCoO3 target are slightly hole doped due to non-stoichiometry generated during growth (effective doping ˜ 0.1 holes per unit cell), which in the bulk is sufficient to destroy the low-spin state. However, even though the films are slightly hole doped, the films under tensile strain show long range ferromagnetic order unlike the bulk system. Since the films are insulating, these results are consistent with a ferromagnetic insulating state arising due to superexchange. Work at UCR is supported by ONR/DMEA under award H94003-08-2-0803.

Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Junfeng; Shafer, Padraic; Mion, Thomas R.

Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

DOE PAGES

He, Junfeng; Shafer, Padraic; Mion, Thomas R.; ...

2016-03-01

Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

Ag- and Cu-doped multifunctional bioactive nanostructured TiCaPCON films

NASA Astrophysics Data System (ADS)

Shtansky, D. V.; Batenina, I. V.; Kiryukhantsev-Korneev, Ph. V.; Sheveyko, A. N.; Kuptsov, K. A.; Zhitnyak, I. Y.; Anisimova, N. Yu.; Gloushankova, N. A.

2013-11-01

A key property of multicomponent bioactive nanostructured Ti(C,N)-based films doped with Ca, P, and O (TiCaPCON) that can be improved further is their antibacterial effect that should be achieved without compromising the implant bioactivity and biocompatibility. The present work is focused on the study of structure, chemical, mechanical, tribological, and biological properties of Ag- and Cu-doped TiCaPCON films. The films with Ag (0.4-4 at.%) and Cu (13 at.%) contents were obtained by simultaneous sputtering of a TiC0.5-Ca3(PO4)2 target and either an Ag or a Cu target. The film structure was studied using X-ray diffraction, transmission and scanning electron microscopy, energy dispersive X-ray spectroscopy, glow discharge optical emission spectroscopy, and Raman-shift and IR spectroscopy. The films were characterized in terms of their hardness, elastic modulus, dynamic impact resistance, friction coefficient and wear rate (both in air and normal saline), surface wettability, electrochemical behavior and Ag or Cu ion release in normal saline. Particular attention was paid to the influence of inorganic bactericides (Ag and Cu ions) on the bactericidal activity against unicellular yeast fungus Saccharomyces cerevisiae and gram-positive bacteria Lactobacillus acidophilus, as well as on the attachment, spreading, actin cytoskeleton organization, focal adhesions, and early stages of osteoblastic cell differentiation. The obtained results show that the Ag-doped films are more suitable for the protection of metallic surfaces against bacterial infection compared with their Cu-doped counterpart. In particular, an excellent combination of mechanical, tribological, and biological properties makes Ag-doped TiCaPCON film with 1.2 at.% of Ag very attractive material for bioengineering and modification of load-bearing metal implant surfaces.

Synthesis and characterization of structural, morphological and photosensor properties of Cu0.1Zn0.9S thin film prepared by a facile chemical method

NASA Astrophysics Data System (ADS)

Gubari, Ghamdan M. M.; Ibrahim Mohammed S., M.; Huse, Nanasaheb P.; Dive, Avinash S.; Sharma, Ramphal

2018-05-01

The Cu0.1Zn0.9S thin film was grown by facile chemical bath deposition (CBD) method on glass substrates at 60°C. The structural, morphological, photosensor properties of the as-grown thin film has been investigated. The structural and phase confirmation of the as-grown thin film was carried out by X-ray diffraction (XRD) technique and Raman spectroscopy. The FE-SEM images showed that the thin films are well covered with material on an entire glass substrate. From the optical absorption spectrum, the direct band gap energy for the Cu0.1Zn0.9S thin film was found to be ˜3.16 eV at room temperature. The electrical properties were measured at room temperature in the voltage range ±2.5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ˜72 % for 260 W.

Heteroepitaxial Cu2O thin film solar cell on metallic substrates

PubMed Central

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

2015-01-01

Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40–60 cm2 V−1 s−1 and carrier concentration over 1016 cm−3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate. PMID:26541499

Microwave absorption studies on high-T sub c superconductors and related materials 7--ESR of DPPH coated on a thin BiSrCaCuO film fabricated on MgO(100) substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugawara, K.; Sugimoto, T.; Shiohara, Y.

1992-05-10

In this paper, ESR of DPPH coated on a Bi-Sr-Ca-Cu-O (BSCCO) film (350 {Angstrom} thick) fabricated on MgO(100) substrate by MOCVD is studied. Temperature dependence of the ESR peak-to-peak linewidth, {Delta}H{sub pp}, and the effect of applied magnetic field on {Delta}H{sub pp} are below about 100 K. The results are compared with those of ESR of DPPH coated on ceramic Y-Ba-Cu-O samples (powder and bulk) made by the MPMG method. The DPPH ESR for the BSCCO film reveals that {Delta}H{sub pp} was independent of applied magnetic field up to about 9 kG. In addition, no similarity between the temperature dependencemore » of the excess ESR linewidth of the DPPH and that of critical current density was found for the BSCCO film. These results for the BSCCO film are different from those for the MPMG YBCO samples.« less

Heteroepitaxial Cu 2O thin film solar cell on metallic substrates

DOE PAGES

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; ...

2015-11-06

Heteroepitaxial, single-crystal-like Cu 2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu 2O films on low cost, flexible, textured metallic substrates. Cu 2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu 2O phase without any trace of CuO phase is only formed in a limited deposition window of P(Omore » 2) - temperature. The (00l) single-oriented, highly textured, Cu 2O films deposited under optimum P(O 2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm 2 V -1 s -1 and carrier concentration over 10 16 cm -3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu 2O solar cell based on epitaxial Cu 2O film prepared on the textured metal substrate.« less

Comparative Dielectric and Ferroelectric Characteristics of Bi0.5Na0.5TiO3, CaCu3Ti4O12, and 0.5Bi0.5Na0.5TiO3-0.5CaCu3Ti4O12 Electroceramics

NASA Astrophysics Data System (ADS)

Singh, Laxman; Yadava, Shiva Sundar; Sin, Byung Cheol; Rai, Uma Shanker; Mandal, K. D.; Lee, Youngil

2016-06-01

The dielectric and ferroelectric characteristics of Bi0.5Na0.5TiO3 (BNT), CaCu3Ti4O12 (CCTO), and 0.5Bi0.5Na0.5TiO3-0.5CaCu3Ti4O12 (BNT/CCTO) ceramics are compared. X-ray diffraction patterns confirmed the formation of single phase of all the ceramics after sintering at 950°C for 15 h. Scanning electron microscopy images of the sintered ceramics reveal average grain sizes in the range from 200 nm to 2.5 μm. Energy-dispersive x-ray mapping and x-ray photoelectron spectroscopy show the presence of the elements Bi, Na, Ca, Cu, Ti, and O with uniform distribution in the ceramics. BNT/CCTO exhibits high dielectric constant ( ɛ r ˜ 6.9 × 104) compared with BNT ( ɛ r ˜ 0.13 × 104) and CCTO ( ɛ r ˜ 1.68 × 104) ceramics at 1 kHz and 503 K. The high dielectric constant of BNT/CCTO compared with BNT and CCTO is associated with a major contribution from grain boundaries, as confirmed by impedance and modulus analyses. The P- E hysteresis loop of all the ceramics measured at room temperature and 50°C exhibited typical ferroelectric nature. The remanent polarization ( P r) of BNT (1.58 μC/cm2) and CCTO (0.654 μC/cm2) ceramics are higher than that of BNT/CCTO (0.267 μC/cm2) ceramic.

Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

NASA Astrophysics Data System (ADS)

Akgul, Funda Aksoy; Akgul, Guvenc

2017-02-01

Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

Superconductivity of Rock-Salt Structure LaO Epitaxial Thin Film.

PubMed

Kaminaga, Kenichi; Oka, Daichi; Hasegawa, Tetsuya; Fukumura, Tomoteru

2018-06-06

We report a superconducting transition in a LaO epitaxial thin film with the superconducting transition onset temperature ( T c ) at around 5 K. This T c is higher than those of other lanthanum monochalcogenides and opposite to their chemical trend: T c = 0.84, 1.02, and 1.48 K for LaX (X = S, Se, Te), respectively. The carrier control resulted in a dome-shaped T c as a function of electron carrier density. In addition, the T c was significantly sensitive to epitaxial strain in spite of the highly symmetric crystal structure. This rock-salt superconducting LaO could be a building block to design novel superlattice superconductors.

Composition gradient optimization and electrical characterization of (Pb, Ca)TiO3 thin films

NASA Astrophysics Data System (ADS)

Bao, Dinghua; Mizutani, Nobuyasu; Zhang, Liangying; Yao, Xi

2001-01-01

Compositionally graded (Pb, Ca)TiO3 thin films were prepared by a monoethanolamine-modified sol-gel technique on platinum-coated silicon substrates at the annealing temperature of 600 °C. The composition gradient of the films was greatly improved by a modified annealing method. The dielectric constants, for up-graded and down-graded films annealed at 600 °C for 60 min, were found to be 469 and 355, respectively. Both were larger than those reported for conventional (Pb, Ca)TiO3 thin films. The compositionally graded films had large polarization offsets in hysteresis loops when excited by an alternating electric field. The more smooth the composition gradient of the graded film, the larger the polarization offset. This was consistent with a theoretical model reported previously by Mantese and coworkers [Appl. Phys. Lett. 71, 2047 (1997)]. The magnitude of polarization offset displayed a power-law dependence on the electric field, and the direction of the offset depended on the direction of the composition gradient with respect to the substrate. Both up-graded and down-graded films had good leakage current characteristics.

Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

NASA Astrophysics Data System (ADS)

Aamir Hassan, Muhammad; Mujahid, Mohammad; Woei, Leow Shin; Wong, Lydia Helena

2018-03-01

Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, Boyd W.; Paulikas, Arvydas; Balachandran, Uthamalingam; Zhong, Wei

1999-01-01

A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

1999-02-09

A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

Cation disorder and gas phase equilibrium in an YBa 2Cu 3O 7- x superconducting thin film

NASA Astrophysics Data System (ADS)

Shin, Dong Chan; Ki Park, Yong; Park, Jong-Chul; Kang, Suk-Joong L.; Yong Yoon, Duk

1997-02-01

YBa 2Cu 3O 7- x superconducting thin films have been grown by in situ off-axis rf sputtering with varying oxygen pressure, Ba/Y ratio in a target, and deposition temperature. With decreasing oxygen pressure, increasing Ba/Y ratio, increasing deposition temperature, the critical temperature of the thin films decreased and the c-axis length increased. The property change of films with the variation of deposition variables has been explained by a gas phase equilibrium of the oxidation reaction of Ba and Y. Applying Le Chatelier's principle to the oxidation reaction, we were able to predict the relation of deposition variables and the resultant properties of thin films; the prediction was in good agreement with the experimental results. From the relation between the three deposition variables and gas phase equilibrium, a 3-dimensional processing diagram was introduced. This diagram has shown that the optimum deposition condition of YBa 2Cu 3O 7- x thin films is not a fixed point but can be varied. The gas phase equilibrium can also be applied to the explanation of previous results that good quality films were obtained at low deposition temperature using active species, such as O, O 3, and O 2+.

Optical anisotropy of Bi2Sr2CaCu2O8

NASA Astrophysics Data System (ADS)

Kim, J. H.; Bozovic, I.; Mitzi, D. B.; Kapitulnik, A.; Harris, J. S., Jr.

1990-04-01

The optical anisotropy of Bi2Sr2CaCu2O8 in the 0.08-0.5-eV region is investigated by polarized reflectance measurements on single crystals. A very large anisotropy is found in this spectral region. The in-plane reflectance exhibits metallic behavior, while the c-axis reflectance exhibits insulatorlike behavior. This result is consistent with the large anisotropy found in the resistivity of Bi2Sr2CaCu2O8. Our spectroscopic data suggest that Bi2Sr2CaCu2O8 is a quasi-two-dimensional metal similar to La2-xSrxCuO4.

Microwave response of high transition temperature superconducting thin films

NASA Technical Reports Server (NTRS)

Miranda, Felix Antonio

1991-01-01

We have studied the microwave response of YBa2Cu3O(7 - delta), Bi-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O high transition temperature superconducting (HTS) thin films by performing power transmission measurements. These measurements were carried out in the temperature range of 300 K to 20 K and at frequencies within the range of 30 to 40 GHz. Through these measurements we have determined the magnetic penetration depth (lambda), the complex conductivity (sigma(sup *) = sigma(sub 1) - j sigma(sub 2)) and the surface resistance (R(sub s)). An estimate of the intrinsic penetration depth (lambda approx. 121 nm) for the YBa2Cu3O(7 - delta) HTS has been obtained from the film thickness dependence of lambda. This value compares favorably with the best values reported so far (approx. 140 nm) in single crystals and high quality c-axis oriented thin films. Furthermore, it was observed that our technique is sensitive to the intrinsic anisotropy of lambda in this superconductor. Values of lambda are also reported for Bi-based and Tl-based thin films. We observed that for the three types of superconductors, both sigma(sub 1) and sigma(sub 2) increased when cooling the films below their transition temperature. The measured R(sub s) are in good agreement with other R(sub S) values obtained using resonant activity techniques if we assume a quadratic frequency dependence. Our analysis shows that, of the three types of HTS films studied, the YBa2Cu3O(7 - delta) thin film, deposited by laser ablation and off-axis magnetron sputtering are the most promising for microwave applications.

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

The demise of superfluid density in overdoped La 2-xSr xCuO 4 films grown by molecular beam epitaxy

DOE PAGES

Bozovic, I.; He, X.; Wu, J.; ...

2016-09-30

Here, we synthesize La 2–xSr xCuO 4 thin films using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). The films are high-quality—singe crystal, atomically smooth, and very homogeneous. The critical temperature (T c) shows a very little (<1 K) variation within a film of 10×10 mm 2 area. The large statistics (over 2000 films) is crucial to discern intrinsic properties. We measured the absolute value of the magnetic penetration depth λ with the accuracy better than 1 % and mapped densely the entire overdoped side of the La 2–xSr xCuO 4 phase diagram. A new scaling law is established accurately for themore » dependence of T c on the superfluid density. The scaling we observe is incompatible with the standard Bardeen-Cooper-Schrieffer picture and points to local pairing.« less

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Lead zirconate titanate (PZT)-based thin film capacitors for embedded passive applications

NASA Astrophysics Data System (ADS)

Kim, Taeyun

Investigations on the key processing parameters and properties relationship for lead zirconate titanate (PZT, 52/48) based thin film capacitors for embedded passive capacitor application were performed using electroless Ni coated Cu foils as substrates. Undoped and Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil by chemical solution deposition. For PZT (52/48) thin film capacitors on electroless Ni coated Cu foil, voltage independent (zero tunability) capacitance behavior was observed. Dielectric constant reduced to more than half of the identical capacitor processed on Pt/SiO2/Si. Dielectric properties of the capacitors were mostly dependent on the crystallization temperature. Capacitance densities of almost 350 nF/cm2 and 0.02˜0.03 of loss tangent were routinely measured for capacitors crystallized at 575˜600°C. Leakage current showed dependence on film thickness and crystallization temperature. From a two-capacitor model, the existence of a low permittivity interface layer (permittivity ˜30) was suggested. For Ca-doped PZT (52/48) thin film capacitors prepared on Pt, typical ferroelectric and dielectric properties were measured up to 5 mol% Ca doping. When Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil, phase stability was influenced by Ca doping and phosphorous content. Dielectric properties showed dependence on the crystallization temperature and phosphorous content. Capacitance density of ˜400 nF/cm2 was achieved, which is an improvement by more than 30% compared to undoped composition. Ca doping also reduced the temperature coefficient of capacitance (TCC) less than 10%, all of them were consistent in satisfying the requirements of embedded passive capacitor. Leakage current density was not affected significantly by doping. To tailor the dielectric and reliability properties, ZrO2 was selected as buffer layer between PZT and electroless Ni. Only RF magnetron sputtering

Dilute electrodeposition of TiO2 and ZnO thin film memristors on Cu substrate

NASA Astrophysics Data System (ADS)

Fauzi, F. B.; Ani, M. H.; Herman, S. H.; Mohamed, M. A.

2018-03-01

Memristor has become one of the alternatives to replace the current memory technologies. Fabrication of titanium dioxide, TiO2 memristor has been extensively studied by using various deposition methods. However, recently more researches have been done to explore the compatibility of other transition metal oxide, TMO such as zinc oxide, ZnO to be used as the active layer of the memristor. This paper highlights the simple and easy-control electrodeposition to deposit titanium, Ti and zinc, Zn thin film at room temperature and subsequent thermal oxidation at 600 °C. Gold, Au was then sputtered as top electrode to create metal-insulator-metal, MIM sandwich of Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors. The structural, morphological and memristive properties were characterized using Field Emission Scanning Electron Microscopy, FESEM, X-Ray Diffraction, XRD and current-voltage, I-V measurement. Both Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristivity were identified by the pinched hysteresis loop with resistive ratio of 1.2 and 1.08 respectively. Empirical study on diffusivity of Ti4+, Zn2+ and O2‑ ions in both metal oxides show that the metal vacancies were formed, thus giving rise to its memristivity. The electrodeposited Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors demonstrate comparable performances to previous studies using other methods.

Strain-Engineered Oxygen Vacancies in CaMnO3 Thin Films.

PubMed

Chandrasena, Ravini U; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario U; Wijesekara, Kanishka D; Golalikhani, Maryam; Davidson, Bruce A; Arenholz, Elke; Kobayashi, Keisuke; Kobata, Masaaki; de Groot, Frank M F; Aschauer, Ulrich; Spaldin, Nicola A; Xi, Xiaoxing; Gray, Alexander X

2017-02-08

We demonstrate a novel pathway to control and stabilize oxygen vacancies in complex transition-metal oxide thin films. Using atomic layer-by-layer pulsed laser deposition (PLD) from two separate targets, we synthesize high-quality single-crystalline CaMnO 3 films with systematically varying oxygen vacancy defect formation energies as controlled by coherent tensile strain. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft X-ray absorption spectroscopy (XAS) in conjunction with bulk-sensitive hard X-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core-hole multiplet calculations with holistic fitting. Our findings open up a promising avenue for designing and controlling new ionically active properties and functionalities of complex transition-metal oxides via strain-induced oxygen-vacancy formation and ordering.

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

NASA Technical Reports Server (NTRS)

Nahra, J. J.; Bhasin, K. B.; Toncich, S. S.; Subramanyam, G.; Kapoor, V. J.

1992-01-01

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

NASA Astrophysics Data System (ADS)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

NASA Astrophysics Data System (ADS)

Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

2018-05-01

In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

Influence of the growth parameters on the electronic and magnetic properties of La0.67Sr0.33MnO3 epitaxial thin films

NASA Astrophysics Data System (ADS)

Annese, E.; Mori, T. J. A.; Schio, P.; Rache Salles, B.; Cezar, J. C.

2018-04-01

The implementation of La0.67Sr0.33MnO3 thin films in multilayered structures in organic and inorganic spintronics devices requires the optimization of their electronic and magnetic properties. In this work we report the structural, morphological, electronic and magnetic characterizations of La0.67Sr0.33MnO3 epitaxial thin films on SrTiO3 substrates, grown by pulsed laser deposition under different growing conditions. We show that the fluence of laser shots and in situ post-annealing conditions are important parameters to control the tetragonality (c/a) of the thin films. The distortion of the structure has a remarkable impact on both surface and bulk magnetism, allowing the tunability of the materials properties for use in different applications.

Electrical Transport and Magnetoresistance Properties of Tensile-Strained CaMnO3 Thin Films

NASA Astrophysics Data System (ADS)

Ullery, Dustin; Lawson, Bridget; Zimmerman, William; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Yong, Grace; Smolyaninova, Vera; Kolagani, Rajeswari

We will present our studies of the electrical transport and magnetoresistance properties of tensile strained CaMnO3 thin films. We observe that the resistivity decreases significantly as the film thickness decreases which is opposite to what is observed in thin films of hole doped manganites. The decrease in resistivity is more pronounced in the films on (100) SrTiO3, with resistivity of the thinnest films being about 3 orders of magnitude lower than that of bulk CaMnO3. Structural changes accompanying resistivity changes cannot be fully explained as due to tensile strain, and indicate the presence of oxygen vacancies. These results also suggest a coupling between tensile strain and oxygen deficiency, consistent with predictions from models based on density functional theory calculations. We observe a change in resistance under the application of moderate magnetic field. Experiments are underway to understand the origin of the magnetoresistance and its possible relation to the tensile strain effects. We acknowledge support from: Towson Office of University Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grants from the Fisher College of Science and Mathematics, and Seed Funding Grant from the School of Emerging technologies.

Microwave properties and characterization of co-evaporated BSCCO thin films

NASA Technical Reports Server (NTRS)

Miranda, F. A.; Chorey, C. M.; Stan, M. A.; Nordgren, C. E.; Kwor, R. Y.; Kalkur, T. S.

1993-01-01

An extensive characterization of Bi-Sr-Ca-Cu-O (BSCCO) thin films deposited by co-evaporation on LaAlO3 and SrTiO3 substrates was performed. The films had a T(sub c) (R = O) of approximately 78 K, and were predominantly c-axis oriented, with critical current densities (J(sub c)) at 4.5 K of 1.6 x 10(exp 6) and 1.1 x 10(exp 6) A cm(sup -2), for the samples on SrTiO3 and LaAlO3, respectively. The microwave properties of the films were examined by three techniques. The complex conductivity sigma(sub *) = sigma(sub 1) - j(sigma(sub 2)) and the magnetic penetration depth (A) were measured by power transmission at 30.6 GHz; the surface resistance (R(sub s)) was measured using a cavity resonator at 58.9 GHz, and the transmission line losses were determined by measuring the quality factor (Q) of a linear microstrip resonator at 10.4 and 20.2 GHz. The complex conductivity for the film on LaAlO3 was determined to be (2.0-j10) x 10(exp 5) S/m at 77 K. It was observed that in the superconducting state sigma(sub 1) deviates from both the Bardeen-Cooper-Schrieffer (BCS) theory and the two-fluid model. Values of lambda were found to be approximately 2.0 and 1.1 microns at 77 K and 20 K respectively, and were obtained for the film on LaAlO3. The value of lambda at 20 K was approximately three times larger than that of BSCCO single crystals. R(sub s) values of 865 and 1391 mOmega were obtained for the films on SrTiO3 and LaAlO3, respectively, at 77 K and 58.9 GHz. Unloaded Q factors at 20 K of approximately 1100 and 800 at 10.4 and 20.2 GHz respectively, were measured for the BSCCO resonator. Unloaded Q values of 290 and 405 at 20 K were obtained at 10.4 GHz and 20.2 GHz respectively, for an all gold (Au) resonator.

CVD growth of large-grain graphene on Cu(111) thin films

NASA Astrophysics Data System (ADS)

Miller, David L.; Diederichsen, Kyle M.; Keller, Mark W.

2013-03-01

Chemical vapor deposition of graphene on polycrystalline Cu foils has produced high quality films with carrier mobility approaching that of exfoliated graphene. Growth on single-crystal films of Cu has received less attention, despite its potential advantages for graphene quality and its importance for eventual applications. This is likely due to the difficulty of obtaining large (>= 1 mm) grains in Cu thin films, as well as dewetting and roughening of Cu films at temperatures near the Cu melting point (1084 C). We found that 450 nm of Cu(111), epitaxially grown by sputtering onto Al2O3(0001), formed > 1 mm grains when annealed at 1065 C for 40 minutes in 40 Torr of Ar and 2.5 mTorr of H2. After this annealing, adding 3 mTorr of CH4 for 8 minutes produced a monolayer graphene film covering > 99 % of the Cu surface. Stopping growth after 4 minutes produced dendritic graphene islands with 6-fold symmetry and diameter of 20 μm to 100 μm . After growth, the Cu film remained smooth except for thermal grooving at grain boundaries and a few holes of diameter ~ 10 μm where Cu dewetted completely (~ 10 holes on each 5 mm x 6 mm chip).

Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

PubMed Central

Sinnarasa, Inthuga; Thimont, Yohann; Presmanes, Lionel; Barnabé, Antoine; Tailhades, Philippe

2017-01-01

P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed. PMID:28654011

Magnetotransport parameters of La0.67Ca0.33MnO3 films grown on neodymium gallate substrates

NASA Astrophysics Data System (ADS)

Boikov, Yu. A.; Volkov, M. P.

2013-01-01

Weakly mechanically stressed 40-nm-thick La0.67Ca0.33MnO3 films have been grown coherently on a (001)NdGaO3 substrate by laser evaporation. The electrical resistivity ρ of the La0.67Ca0.33MnO3 film reaches a maximum at a temperature T C ≈ 255 K. At temperatures below 0.6 T C, the temperature dependences of ρ are well approximated by the relation ρ = ρdef + C 1 T 2 + C 2 T 4.5, in which the first term on the right-hand side accounts for the contribution of structural defects to electrical resistivity, and the second and third terms stand for those of the electron-electron and electron-magnon interactions, respectively. The parameters ρdef ≈ 1 x 10-4 Ω cm and C 1 ≈ 7.7 × 10-9 Ω cm K-2 do not depend on temperature and magnetic field H. The coefficient C 2 decreases with increasing H to reach about 4.9 × 10-15 Ω cm K-4.5 at μ0 H = 14 T.

Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

NASA Astrophysics Data System (ADS)

Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

1994-09-01

The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time

NASA Astrophysics Data System (ADS)

Sultana, Jenifar; Paul, Somdatta; Karmakar, Anupam; Yi, Ren; Dalapati, Goutam Kumar; Chattopadhyay, Sanatan

2017-10-01

Thin film of p-type cupric oxide (p-CuO) is grown on silicon (n-Si) substrate by using chemical bath deposition (CBD) technique and a precise control of thickness from 60 nm to 178 nm has been achieved. The structural properties and stoichiometric composition of the grown films are observed to depend significantly on the growth time. The chemical composition, optical properties, and structural quality are investigated in detail by employing XRD, ellipsometric measurements and SEM images. Also, the elemental composition and the oxidation states of Cu and O in the grown samples have been studied in detail by XPS measurements. Thin film of 110 nm thicknesses exhibited the best performance in terms of crystal quality, refractive index, dielectric constant, band-gap, and optical properties. The study suggests synthesis route for developing high quality CuO thin film using CBD method for electronic and optical applications.

Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109

NASA Astrophysics Data System (ADS)

Yang, Chang; Kneiß, Max; Schein, Friedrich-Leonhard; Lorenz, Michael; Grundmann, Marius

2016-02-01

CuI is a p-type transparent conductive semiconductor with unique optoelectronic properties, including wide band gap (3.1 eV), high hole mobility (>40 cm2 V-1 s-1 in bulk), and large room-temperature exciton binding energy (62 meV). The difficulty in epitaxy of CuI is the main obstacle for its application in advanced solid-state electronic devices. Herein, room-temperature heteroepitaxial growth of CuI on various substrates with well-defined in-plane epitaxial relations is realized by reactive sputtering technique. In such heteroepitaxial growth the formation of rotation domains is observed and hereby systematically investigated in accordance with existing theoretical study of domain-epitaxy. The controllable epitaxy of CuI thin films allows for the combination of p-type CuI with suitable n-type semiconductors with the purpose to fabricate epitaxial thin film heterojunctions. Such heterostructures have superior properties to structures without or with weakly ordered in-plane orientation. The obtained epitaxial thin film heterojunction of p-CuI(111)/n-ZnO(00.1) exhibits a high rectification up to 2 × 109 (±2 V), a 100-fold improvement compared to diodes with disordered interfaces. Also a low saturation current density down to 5 × 10-9 Acm-2 is formed. These results prove the great potential of epitaxial CuI as a promising p-type optoelectronic material.

Improvement of critical current density in thallium-based (Tl,Bi)Sr(1.6)Ba(0.4)Ca2Cu3O(x) superconductors

NASA Technical Reports Server (NTRS)

Ren, Z. F.; Wang, C. A.; Wang, J. H.; Miller, D. J.; Goretta, K. C.

1995-01-01

Epitaxial (Tl,Bi)Sr(1.6)Ba(0.4)Ca2Cu3O(x) ((Tl,Bi)-1223) thin films on (100) single crystal LaAlO3 substrates were synthesized by a two-step procedure. Phase development, microstructure, and relationships between film and substrate were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Resistance versus temperature, zero-field-cooled and field cooled magnetization, and transport critical current density (J(sub c)) were measured. The zero-resistance temperature was 105-111 K. J(sub c) at 77 K and zero field was greater than 2 x 10(exp 6) A/sq cm. The films exhibited good flux pinning properties.

Effectiveness of BaTiO 3 dielectric patches on YBa 2Cu 3O 7 thin films for MEM switches

DOE PAGES

Vargas, J.; Hijazi, Y.; Noel, J.; ...

2014-05-12

A micro-electro-mechanical (MEM) switch built on a superconducting microstrip filter will be utilized to investigate BaTiO 3 dielectric patches for functional switching points of contact. Actuation voltage resulting from the MEM switch provokes static friction between the bridge membrane and BaTiO 3 insulation layer. Furthermore, the dielectric patch crystal structure and roughness affect the ability of repetitively switching cycles and lifetime. We performed a series of experiments using different deposition methods and RF magnetron sputtering was found to be the best deposition process for the BaTiO 3 layer. The effect examination of surface morphology will be presented using characterization techniquesmore » as x-ray diffraction, SEM and AFM for an optimum switching device. The thin film is made of YBa 2Cu 3O 7 deposited on LaAlO 3 substrate by pulsed laser deposition. In our work, the dielectric material sputtering pressure is set at 9.5x10 -6 Torr. The argon gas is released through a mass-flow controller to purge the system prior to deposition. RF power is 85 W at a distance of 9 cm. The behavior of Au membranes built on ultimate BaTiO 3 patches will be shown as part of the results. These novel surface patterns will in turn be used in modelling other RF MEM switch devices such as distributed-satellite communication system operating at cryogenic temperatures.« less

Influence of calcium on transport properties, band spectrum and superconductivity of YBa2Cu3O(y) and YBa(1.5)La(0.5)Cu3O(y)

NASA Technical Reports Server (NTRS)

Gasumyants, V. E.; Vladimirskaya, E. V.; Patrina, I. B.

1995-01-01

The comparative investigation of transport phenomena in Y(1-x)Ca(x)Ba2Cu3O(y) (0 is less than x is less than 0.25; 6.96 is greater than y is greater than 6.87 and 6.73 is less than x is less than 6.53); Y(1-x)Ca(x)Ba(1.5)La(0.5)Cu3O(y) (0 is less than x is less than 0.5; 7.12 is greater than y is greater than 6.96) and YBa(2-x)La(x)Cu3O(y) (0 is less than x is less than 0.5; 6.95 is less than y is less than 7.21) systems have been carried out. The temperature dependencies of resistivity and thermopower have been measured. It was found that the S(T) dependencies take some additional features with Ca content increase. The results obtained have been analyzed on the basis of the phenomenological theory of electron transport in the case of the narrow conductive band. The main parameters of the band spectrum (the band filling with electrons degree and the total effective band width) have been determined. The dependencies of these from contents of substituting elements are discussed. Analyzing the results obtained simultaneously with the tendencies in oxygen content and critical temperature change we have confirmed the conclusion that the oxygen sublattice disordering has a determinant effect on band structure parameters and superconductive properties of YBa2Cu3O(y). The results obtained suggest that Ca gives rise to some peculiarities in band spectrum of this compound.

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

NASA Astrophysics Data System (ADS)

Li, Yi; Liu, Qi; Cai, Jing; Li, Yun; Shi, Yi; Wang, Xizhang; Hu, Zheng

2014-06-01

This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from -20.4 V to -0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

Electronic Structure of HgBa2CaCu2O(6+delta) Epitaxial films measured by x-ray Photoemission

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Rupp, M.; Gupta, A.; Tsuei, C. C.

1995-01-01

The electronic structure and chemical states of HgBa2CaCu20(sub 6 + delta), epitaxial films have been studied with x-ray photelectron spectroscopy. Signals from the superconducting phase dominate all the core-level spectra, and a clear Fermi edge is observed in the valence-band region. The Ba, Ca, Cu, and O core levels are similar to those of Tl2Ba2CaCu208(+)O(sub 6 + delta), but distinct differences are observed in the valence bands which are consistent with differences in the calculated densities of states.

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

NASA Astrophysics Data System (ADS)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Electrodeposited CuGa(Se,Te)2 thin-film prepared from sulfate bath

NASA Astrophysics Data System (ADS)

Oda, Yusuke; Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro

2006-09-01

CuGa(Se,Te)2 (CGST) thin films were prepared on a soda-lime glass substrate sputter coated with molybdenum by electrodeposition. The aqueous solution which contained CuSO4-5H2O, Ga2(SO4)3-19.3H2O, H2SeO3, H6TeO6, Li2SO4 and gelatin was adjusted to pH 2.6 with dilute H2SO4 and NaOH. It has been observed that (i) a crack-less and smooth CGST film with a composition close to the stoichiometric ratio was deposited at -600 mV (vs. Ag/AgCl) when Te was hardly included in the film and (ii) cracks and products on the surface increased with increasing Te content in the film. Annealing at 600 °C for 10 min improved the crystallinity of the as-deposited films.

Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

PubMed

Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

2016-12-21

To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu 2 ZnSnS 4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g -1 even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm 2 utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO 2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

Fluorescence X-ray absorption spectroscopy using a Ge pixel array detector: application to high-temperature superconducting thin-film single crystals.

PubMed

Oyanagi, H; Tsukada, A; Naito, M; Saini, N L; Lampert, M O; Gutknecht, D; Dressler, P; Ogawa, S; Kasai, K; Mohamed, S; Fukano, A

2006-07-01

A Ge pixel array detector with 100 segments was applied to fluorescence X-ray absorption spectroscopy, probing the local structure of high-temperature superconducting thin-film single crystals (100 nm in thickness). Independent monitoring of pixel signals allows real-time inspection of artifacts owing to substrate diffractions. By optimizing the grazing-incidence angle theta and adjusting the azimuthal angle phi, smooth extended X-ray absorption fine structure (EXAFS) oscillations were obtained for strained (La,Sr)2CuO4 thin-film single crystals grown by molecular beam epitaxy. The results of EXAFS data analysis show that the local structure (CuO6 octahedron) in (La,Sr)2CuO4 thin films grown on LaSrAlO4 and SrTiO3 substrates is uniaxially distorted changing the tetragonality by approximately 5 x 10(-3) in accordance with the crystallographic lattice mismatch. It is demonstrated that the local structure of thin-film single crystals can be probed with high accuracy at low temperature without interference from substrates.

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

NASA Technical Reports Server (NTRS)

Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

1989-01-01

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Characterization of Cu2ZnSnS4 thin films prepared by photo-chemical deposition

NASA Astrophysics Data System (ADS)

Moriya, Katsuhiko; Watabe, Jyunichi; Tanaka, Kunihiko; Uchiki, Hisao

2006-09-01

Cu2ZnSnS4 (CZTS) thin films were prepared by post-annealing films of metal sulfides of Cu2S, ZnS and SnS2 precursors deposited on soda-lime glass substrates by photo-chemical deposition (PCD) from aqueous solution containing CuSO4, ZnSO4, SnSO4 and Na2S2O3. In this study, sulfurization was employed to prepare high quality CZTS thin films. Deposited films of metal sulfides were annealed in a furnace in an atmosphere of N2 or N2+H2S(5%) at the temperature of 300°, 400° or 500 °C. The sulfured films showed X-ray diffraction peaks from (112), (220), and (312) planes of CZTS and the peaks became sharp by an increase in the sulfurization temperature. CZTS thin film annealed in atmosphere of N2 was S-poor. After annealing atmosphere was changed from N2 into N2+H2S(5%), the decrease of a composi- tional ratio of sulfur could be suppressed.

Effect of Substrates on the Photoelectrochemical Reduction of Water over Cathodically Electrodeposited p-Type Cu2O Thin Films.

PubMed

Shyamal, Sanjib; Hajra, Paramita; Mandal, Harahari; Singh, Jitendra Kumar; Satpati, Ashis Kumar; Pande, Surojit; Bhattacharya, Chinmoy

2015-08-26

In this study, we demonstrate development of p-Cu2O thin films through cathodic electrodeposition technique at constant current of 0.1 mA/cm(2) on Cu, Al, and indium tin oxide (ITO) substrates from basic CuSO4 solution containing Triton X-100 as the surfactant at 30-35 °C. The optical and morphological characterizations of the semiconductors have been carried out using UV-vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The band gap energy of ∼2.1 eV is recorded, whereas SEM reveals that the surface morphology is covered with Cu2O semiconductors. XRD analyses confirm that with change in substrate, the size of Cu2O "cubic" crystallites decreases from ITO to Al to Cu substrates. Photoelectrochemical characterizations under dark and illuminated conditions have been carried out through linear sweep voltammetry, chronoamperometry and electrochemical impedance spectroscopic analysis. The photoelectrochemical reduction of water (H2O → H2) in pH 4.9 aqueous solutions over the different substrates vary in the order of Cu > Al > ITO. The highest current of 4.6 mA/cm(2) has been recorded over the Cu substrate even at a low illumination of 35 mW/cm(2), which is significantly higher than the values (2.4 mA/cm(2) on Au coated FTO or 4.07 mA/cm(2) on Cu foil substrate at an illumination of 100 mW/cm(2)) reported in literature.

Characterization of (Ba(0.5)Sr(0.5)) TiO3 Thin Films for Ku-Band Phase Shifters

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; VanKeuls, Fredrick W.; Romanofsky, Robert R.; Miranda, Felix A.; Warner, Joseph D.; Canedy, Chadwick L.; Ramesh, Rammamoorthy

1999-01-01

The microstructural properties of (Ba(0.5)Sr(0.5)TiO3) (BSTO) thin films (300, 700, and 1400 nm thick) deposited on LaAlO3 (LAO) substrates were characterized using high-resolution x-ray diffractometry. Film crystallinity was the parameter that most directly influenced tunability, and we observed that a) the crystalline quality was highest in the thinnest film and progressively degraded with increasing film thickness; and b) strain at the film/substrate interface was completely relieved via dislocation formation. Paraelectric films such as BSTO offer an attractive means of incorporating low-cost phase shifter circuitry into beam-steerable reflectarray antennas.

Phonon and magnon dispersions of incommensurate spin ladder compound Sr14Cu24O41

NASA Astrophysics Data System (ADS)

Chen, Xi; Bansal, Dipanshu; Sullivan, Sean; Zhou, Jianshi; Delaire, Olivier; Shi, Li

There are a variety of compounds consisting of two or more interpenetrating sublattices with lattice periods incommensurate at least along one crystal axis. One example is spin ladder compound Sr14Cu24O41 consisting of incommensurate spin ladder and spin chain sublattices. It has been predicted that unique phonon modes occur in these compounds due to the relative motion of the sublattices. In the low-wavelength limit, there is only one longitudinal acoustic mode due to the rigid translation of both sublattices. In addition, one extra pseudo-acoustic mode is present due to relative sliding motions of the two sublattices. Although the theoretical aspects of the lattice dynamics of incommensurate compounds have been studied, there have been few experimental investigations on their phonon dynamics. In this work, single crystals of Sr14Cu24O41are grown by the traveling solvent floating zone method. The phonon dispersion of Sr14Cu24O41 is studied through inelastic neutron scattering measurements in order to better understand its phonon dynamics. In addition, its magnon dispersion is investigated and correlated to the large directional magnon thermal conductivity. The measurements reveal a wealth of intriguing features on phonons and magnons in the spin ladder compound. This work is supported by ARO MURI program under Award # W911NF-14-1-0016.

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

Influence of substrate temperature and post annealing of CuGaO{sub 2} thin films on optical and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie

A transparent p-type thin film CuGaO{sub 2} was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10{sup −2} Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. Themore » details of the results will be discussed in the conference.« less

Investigation on optical properties of Bi2.85La0.15TiNbO9 thin films by prism coupling technique

NASA Astrophysics Data System (ADS)

Zhang, Mingfu; Chen, Hengzhi; Yang, Bin; Cao, Wenwu

2009-12-01

Layered-perovskite ferroelectric Bi2.85La0.15TiNbO9 (LBTN) optical waveguiding thin films were grown on fused silica substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) revealed that the film is highly (00 l) textured. We observed sharp and distinct transverse electric (TE) and transverse magnetic (TM) multimodes and measured the refractive indices of LBTN thin films at 632.8 nm. The ordinary and extraordinary refractive indices were calculated to be n TE=2.358 and n TM=2.464, respectively. The film homogeneity and the film-substrate interface were analyzed using an improved version of the inverse Wentzel-Kramer-Brillouin (iWKB) method. The refractive index of the film remains constant at n 0 within the waveguiding layer. The average transmittance of the film is 70% in the wavelength range of 400-1400 nm and the optical waveguiding properties were evaluated by the optical prism coupling method. Our results showed that the LBTN films are very good electro-optical active material.

Nodeless pairing in superconducting copper-oxide monolayer films on Bi 2Sr 2CaCu 2O 8+δ

DOE PAGES

Zhong, Yong; Wang, Yang; Han, Sha; ...

2016-07-12

We report that the pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO 2 layers. Here, by growing CuO 2 monolayer films on Bi 2Sr 2CaCu 2O 8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherencemore » and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO 2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. In conclusion, our results support an s-wave superconductivity in Bi 2Sr 2CaCu 2O 8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO 2 layers.« less

Nodeless pairing in superconducting copper-oxide monolayer films on Bi 2Sr 2CaCu 2O 8+δ

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Yong; Wang, Yang; Han, Sha

We report that the pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO 2 layers. Here, by growing CuO 2 monolayer films on Bi 2Sr 2CaCu 2O 8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherencemore » and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO 2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. In conclusion, our results support an s-wave superconductivity in Bi 2Sr 2CaCu 2O 8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO 2 layers.« less

Nanodomain induced anomalous magnetic and electronic transport properties of LaBaCo{sub 2}O{sub 5.5+δ} highly epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruiz-Zepeda, F.; Ma, C.; Bahena Uribe, D.

2014-01-14

A giant magnetoresistance effect (∼46% at 20 K under 7 T) and anomalous magnetic properties were found in a highly epitaxial double perovskite LaBaCo{sub 2}O{sub 5.5+δ} (LBCO) thin film on (001) MgO. Aberration-corrected Electron Microscopy and related analytical techniques were employed to understand the nature of these unusual physical properties. The as-grown film is epitaxial with the c-axis of the LBCO structure lying in the film plane and with an interface relationship given by (100){sub LBCO} || (001){sub MgO} and [001]{sub LBCO} || [100]{sub MgO} or [010]{sub MgO}. Orderly oxygen vacancies were observed by line profile electron energy loss spectroscopy and bymore » atomic resolution imaging. Especially, oxygen vacancy and nanodomain structures were found to have a crucial effect on the electronic transport and magnetic properties.« less

Travelling-solvent floating-zone growth of the dilutely Co-doped spin-ladder compound Sr14(Cu, Co)24O41

NASA Astrophysics Data System (ADS)

Bag, Rabindranath; Karmakar, Koushik; Singh, Surjeet

2017-01-01

We present here crystal growth of dilutely Co-doped spin-ladder compounds Sr14(Cu 1-x, Cox)24O41 (x = 0, 0.01, 0.03, 0.05, 0.1) using the Travelling Solvent Floating Zone (TSFZ) technique associated with an image furnace. We carried out detailed microstructure and compositional analysis. The microstructure of the frozen-in FZ revealed two bands: a lower band consisting of well-aligned single-crystalline stripes of the phase Sr14(Cu, Co)24O41 embedded in the eutectic mixture of composition SrO 18% and (Cu, Co)O 82%; and an upper band consisting of a criss-crossed pattern of these stripes. These analyses were also employed to determine the distribution coefficient of the dopants in Sr14Cu24O41. The distribution coefficient turned out to be close to 1, different from Sr2CuO3 reported previously where Co tend to accumulate in the molten zone. Direct access to the composition of the frozen-in zone eliminated any previous ambiguities associated with the composition of the peritectic point of Sr14Cu24O41; and also the eutectic point in the binary SrO-CuO phase diagram. The lattice parameters show an anisotropic variation upon Co-doping with parameters a and b increasing, c decreasing; and with an overall decrease of the unit cell volume. Magnetic susceptibility measurements were carried out on the pristine and the Co-doped crystals along the principal crystallographic axes. The spin susceptibility of the x = 0.01 crystal exhibits a strong anisotropy, which is in stark contrast with the isotropic behaviour of the pristine crystal. This anisotropy seems to arise from the intradimer exchange interaction as inferred from the anisotropy of the dimer contribution to the susceptibility of the Co-doped crystal. The Curie-tail in the magnetic susceptibility of Sr14(Cu 1-x, Cox)24O41 (x = 0, 0.01, 0.03, 0.05, 0.1) crystals (field applied parallel to the ladder) was found to scale with Co-doping - the scaling is employed to confirm a homogeneous distribution of Co in a x = 0

Synthesis and electronic properties of Fe 2TiO 5 epitaxial thin films

DOE PAGES

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; ...

2018-05-02

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

NASA Astrophysics Data System (ADS)

Nandur, Abhishek; White, Bruce

2014-03-01

CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

Structural, magnetic and electronic properties of pulsed-laser-deposition grown SrFeO3-δ thin films and SrFeO3-δ /La2/3Ca1/3MnO3 multilayers

NASA Astrophysics Data System (ADS)

Perret, E.; Sen, K.; Khmaladze, J.; Mallett, B. P. P.; Yazdi-Rizi, M.; Marsik, P.; Das, S.; Marozau, I.; Uribe-Laverde, M. A.; de Andrés Prada, R.; Strempfer, J.; Döbeli, M.; Biškup, N.; Varela, M.; Mathis, Y.-L.; Bernhard, C.

2017-12-01

We studied the structural, magnetic and electronic properties of SrFeO3-δ (SFO) thin films and SrFeO3-δ /La2/3 Ca1/3 MnO3 (LCMO) superlattices that have been grown with pulsed laser deposition (PLD) on La0.3 Sr0.7 Al0.65 Ta0.35 O3 (LSAT) substrates. X-ray reflectometry and scanning transmission electron microscopy (STEM) confirm the high structural quality of the films and flat and atomically sharp interfaces of the superlattices. The STEM data also reveal a difference in the interfacial layer stacking with a SrO layer at the LCMO/SFO and a LaO layer at the SFO/LCMO interfaces along the PLD growth direction. The x-ray diffraction (XRD) data suggest that the as grown SFO films and SFO/LCMO superlattices have an oxygen-deficient SrFeO3-δ structure with I4/ mmm space group symmetry (δ≤slant 0.2 ). Subsequent ozone annealed SFO films are consistent with an almost oxygen stoichiometric structure (δ ≈ 0 ). The electronic and magnetic properties of these SFO films are similar to the ones of corresponding single crystals. In particular, the as grown SrFeO3-δ films are insulating whereas the ozone annealed films are metallic. The magneto-resistance effects of the as grown SFO films have a similar magnitude as in the single crystals, but extend over a much wider temperature range. Last but not least, for the SFO/LCMO superlattices we observe a rather large exchange bias effect that varies as a function of the cooling field.

Evidence for filamentary superconductivity up to 220 K in oriented multiphase Y-Ba-Cu-O thin films

NASA Astrophysics Data System (ADS)

Schönberger, R.; Otto, H. H.; Brunner, B.; Renk, K. F.

1991-02-01

We report on the observation of filamentary superconductivity up to 220 K in multiphase Y-Ba-Cu-O materials that are deposited as highly oriented thin films on (110)-SrTiO 3 substrates by laser ablation from ceramic targets. The high temperature zero resistivity states are reproducible after temperature cycling down to 80 K for samples treated by a special oxygenation and ozonization process at 340 K and measured in a pure oxygen atmosphere. Our results on thin films confirm former experiments of J.T. Chen and co-workers obtained on ceramic samples with preferred crystallite orientation. A close connection between superconductivity and structural instabilities of most likely ferroic nature, which are observed more often for YBa 2Cu 3O 7 in a narrow temperature range near 220 K, is suggested.

Growth and structural characterization of large superconducting crystals of La 2 - x Ca 1 + x Cu 2 O 6

DOE PAGES

Schneeloch, J. A.; Guguchia, Z.; Stone, M. B.; ...

2017-12-01

Lmore » arge crystals of a 2 - x Ca 1 + x Cu 2 O 6 (a-Ca-2126) with x = 0:10 and 0.15 have been grown and converted to bulk superconductors by high-pressure oxygen annealing. The superconducting transition temperature, T c, is as high as 55 K; this can be raised to 60 K by post-annealing in air. Here we present structural and magnetic characterizations of these crystals using neutron scattering and muon spin rotation techniques. While the as-grown, non-superconducting crystals are single phase, we nd that the superconducting crystals contain 3 phases forming coherent domains stacked along the c axis: the dominant a-Ca-2126 phase, very thin (1.5 unit-cell) intergrowths of a 2CuO 4, and an antiferromagnetic a 8Cu 8O 20 phase. We propose that the formation and segregation of the latter phases increases the Ca concentration of the a-Ca-2126, thus providing the hole-doping that supports superconductivity.« less

Growth and structural characterization of large superconducting crystals of La 2 - x Ca 1 + x Cu 2 O 6

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneeloch, J. A.; Guguchia, Z.; Stone, M. B.

Lmore » arge crystals of a 2 - x Ca 1 + x Cu 2 O 6 (a-Ca-2126) with x = 0:10 and 0.15 have been grown and converted to bulk superconductors by high-pressure oxygen annealing. The superconducting transition temperature, T c, is as high as 55 K; this can be raised to 60 K by post-annealing in air. Here we present structural and magnetic characterizations of these crystals using neutron scattering and muon spin rotation techniques. While the as-grown, non-superconducting crystals are single phase, we nd that the superconducting crystals contain 3 phases forming coherent domains stacked along the c axis: the dominant a-Ca-2126 phase, very thin (1.5 unit-cell) intergrowths of a 2CuO 4, and an antiferromagnetic a 8Cu 8O 20 phase. We propose that the formation and segregation of the latter phases increases the Ca concentration of the a-Ca-2126, thus providing the hole-doping that supports superconductivity.« less

Dielectric properties of (CuO, CaO2, and BaO)y/CuTl-1223 composites

NASA Astrophysics Data System (ADS)

Mumtaz, M.; Kamran, M.; Nadeem, K.; Jabbar, Abdul; Khan, Nawazish A.; Saleem, Abida; Tajammul Hussain, S.; Kamran, M.

2013-07-01

We synthesized (CuO, CaO2, and BaO)y/Cu0.5Tl0.5Ba2Ca2Cu3O10-δ (y = 0, 5%, 10%, 15%) composites by solid-state reaction and characterized them by x-ray diffraction, scanning electron microscopy, dc-resistivity, and Fourier transform infrared spectroscopy. Frequency and temperature dependent dielectric properties, such as real and imaginary parts of the dielectric constant, dielectric loss, and ac-conductivity of these composites were studied by capacitance and conductance measurements as a function of frequency (10 kHz to 10 MHz) and temperature (78 to 300 K). X-ray diffraction analysis reveals that the characteristic behavior of the superconductor phase and the structure of Cu0.5Tl0.5Ba2Ca2Cu3O10-δ are nearly undisturbed by doping with nanoparticles. Scanning electron microscopy images show the improvement in the intergranular linking between the superconducting grains occurring with increasing nanoparticle concentration. Microcracks are healed up with these nanoparticles, and superconducting volume fraction is also increased. Dielectric properties of these composites strongly depend on the frequency and temperature. Zero resistivity critical temperature and dielectric properties show opposite trends with the addition of nanoparticles to the Cu0.5Tl0.5Ba2Ca2Cu3O10-δ superconductor matrix.

Tuning the magnetic properties of LaCoO3 thin films by epitaxial strain

NASA Astrophysics Data System (ADS)

Fuchs, D.; Arac, E.; Pinta, C.; Schuppler, S.; Schneider, R.; v. Löhneysen, H.

2008-01-01

Ferromagnetic order can be induced in LaCoO3 (LCO) thin films by epitaxial strain. Here, we show that the magnetic properties can be “tuned” by epitaxial strain imposed on LCO thin films by the epitaxial growth on various substrate materials, i.e., (001) oriented SrLaAlO4 , LaAlO3 , SrLaGaO4 , (LaAlO3)0.3(Sr2AlTaO6)0.7 , and SrTiO3 . The lattice mismatch at room temperature of the in-plane lattice parameters between the substrate, as , and bulk LCO, ab , ranges from -1.31% to +2.63% . Single-phase, ⟨001⟩ oriented LCO thin films were grown by pulsed laser deposition on all these substrates. Due to the difference of the thermal-expansion coefficients between LCO and the substrates, the films experience an additional tensile strain of about +0.3% during the cooling process after the deposition at Ts=650°C . The film lattice parameters display an elastic behavior, i.e., an increase of the in-plane film lattice parameter with increasing as . From the ratio between the out-of-plane and in-plane strain, we obtain a Poisson ratio of ν≈1/3 . All films show a ferromagnetic transition as determined from magnetization measurements. The magnetization increases strongly with increasing tensile strain, whereas the transition temperature TC after a rapid initial rise appears to saturate at TC≈85K above a=3.86Å . The effective magnetic moment μeff in the paramagnetic state increases almost linearly as a function of the mean lattice parameter ⟨a⟩ , indicating an enhanced population of higher spin states, i.e., intermediate- or high-spin states. The experimental results are discussed in terms of a decrease of the octahedral-site rotation with increasing tensile strain.

Soft X-ray absorption spectroscopy investigations of Bi{sub 6}FeCoTi{sub 3}O{sub 18} and LaBi{sub 5}FeCoTi{sub 3}O{sub 18} epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Zhangzhang; Huang, Haoliang; Fu, Zhengping

High-quality single-crystalline Bi{sub 6}FeCoTi{sub 3}O{sub 18} and LaBi{sub 5}FeCoTi{sub 3}O{sub 18} thin films were prepared by pulsed laser deposition. X-ray diffraction characterizations indicate a more disordered lattice structure of the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film. The magnetic measurement results demonstrated significantly enhanced ferromagnetism in the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film. The modulation of oxidation and hybridization states caused by substituting Bi with La was studied using the soft X-ray absorption spectroscopy. The spectroscopic results revealed the reduced concentration of oxygen vacancies and the more distorted lattice structure in the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film, which explained the enhanced ferromagnetism.

Low-Temperature Atomic Layer Deposition of CuSbS2 for Thin-Film Photovoltaics.

PubMed

Riha, Shannon C; Koegel, Alexandra A; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

2017-02-08

Copper antimony sulfide (CuSbS 2 ) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10 4 cm -1 ), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm -1 , as well as a hole concentration of 10 15 cm -3 . Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2 /CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.

Low-temperature atomic layer deposition of CuSbS 2 for thin-film photovoltaics

DOE PAGES

Riha, Shannon C.; Koegel, Alexandra A.; Emery, Jonathan D.; ...

2017-01-24

Copper antimony sulfide (CuSbS 2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (~1.5 eV), large absorption coefficient (>10 4 cm –1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) post process anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm –1, as wellmore » as a hole concentration of 10 15 cm –3. Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2/CdS heterojunction PV devices. As a result, while far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.« less

Highly oriented Bi-based thin films with zero resistance at 106 K

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kula, W.; Sobolewski, R.; Gorecka, J.

1991-03-01

This paper reports on fabrication and characterization of nearly single-phase superconducting Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x} thin films. The films were dc magnetron sputtered from heavily Pb-doped (Pb/Bi molar ratios up to 1.25), sintered targets on unheated MgO, SrTiO{sub 3}, CaNdAlO{sub 4}, and SrLaAlO{sub 4} single crystals. For the films grown on the (100) oriented MgO substrate, less than 1 hour of annealing in air at 870{degrees} C was sufficient to obtain more than 90% of the 110-K-phase material, with highly c-axis oriented crystalline structure and zero resistivity at 106 K. The films fabricated on the other substrates alsomore » exhibited a narrow superconducting transition and were fully superconducting above 100 K, but they consisted of a mixed-phase material with a large percentage of the 80 K phase.« less

(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

NASA Astrophysics Data System (ADS)

Yamamichi, Shintaro; Yabuta, Hisato; Sakuma, Toshiyuki; Miyasaka, Yoichi

1994-03-01

(Ba0.5Sr0.5)TiO3 thin films were prepared by ion beam sputtering from powder targets with (Ba+Sr)/Ti ratios ranging from 0.80 to 1.50. All of the perovskite (Ba,Sr)TiO3 films were single phase except for the film with a (Ba+Sr)/Ti ratio of 1.41. The dielectric constant values notably depended on the (Ba+Sr)/Ti ratio for films thicker than 70 nm. The highest dielectric constant of 580 was achieved for the 5% (Ba+Sr) rich film. This (Ba+Sr)/Ti ratio dependence was diminished by the thickness dependence for thinner films. The grain sizes for the 9% (Ba+Sr) rich film and for the 6% (Ba+Sr) poor film ranged from 70 to 100 nm and from 30 to 60 nm, respectively. This grain size difference could explain why slightly A-site rich (Ba,Sr)TiO3 films have a larger dielectric constant than A-site poor films.

Mesure de la conductivité complexe et de la résistance de surface de films supraconducteurs YBaCuO

NASA Astrophysics Data System (ADS)

Mehri, F.; Lepercq, P.; Carru, J. C.; Playez, E.; Thivet, C.; Perrin, A.; Chambonnet, D.

1994-11-01

We describe in this paper 2 non destructive measurement methods in microwaves (18-26 GHz) well-suited to the characterization of conducting and superconducting thin films. From the experimental values we show that it is possible to infer, without any hypothesis, the following parameters : σ^*, R_s, X_s and λ between 20 K and 300 K. Some examples are given with metallic and superconducting samples from various origins. At 22 GHz and below 75 K, YBaCuO films deposited on MgO have a surface resistance inferior to bulk copper one. Dans cet article nous décrivons 2 méthodes de mesure non destructives adaptées à la caractérisation en microondes (18-26 GHz) de films minces conducteurs et supraconducteurs. A partir des valeurs expérimentales nous montrons qu'il est possible d'en déduire les grandeurs caractéristiques à savoir σ^*, R_s, X_s et λ entre 20 K et 300 K. Nous donnons des exemples de caractérisation de films métalliques et supraconducteurs provenant de différentes origines. A 22 GHz, en dessous de 75 K, les films YBaCuO déposés sur MgO ont une résistance de surface inférieure à celle du cuivre massif.

Thin Films

NASA Astrophysics Data System (ADS)

Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

2014-11-01

Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

Effect of copper doping on the photocatalytic activity of ZnO thin films prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Saidani, T.; Zaabat, M.; Aida, M. S.; Boudine, B.

2015-12-01

In the present work, we prepared undoped and copper doped ZnO thin films by the sol-gel dip coating method on glass substrates from zinc acetate dissolved in a solution of ethanol. The objective of our work is to study the effect of Cu doping with different concentrations on structural, morphological, optical properties and photocatalytic activity of ZnO thin films. For this purpose, we have used XRD to study the structural properties, and AFM to determine the morphology of the surface of the ZnO thin films. The optical properties and the photocatalytic degradation of the films were examined by UV-visibles spectrophotometer. The Tauc method was used to estimate the optical band gap. The XRD spectra indicated that the films have an hexagonal wurtzite structure, which gradually deteriorated with increasing Cu concentration. The results showed that the incorporation of Cu decreases the crystallite size. The AFM study showed that an increase of the concentration of Cu causes the decrease of the surface roughness, which passes from 20.2 for Un-doped ZnO to 12.16 nm for doped ZnO 5 wt% Cu. Optical measurements have shown that all the deposited films show good optical transmittance (77%-92%) in the visible region and increases the optical gap with increasing Cu concentration. The presence of copper from 1% to 5 wt% in the ZnO thin films is found to decelerate the photocatalytic process.

Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

PubMed

Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

2015-03-18

The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of the deposition conditions and structural characterization of Y1Ba2Cu3O(7-x) thin superconducting films

NASA Technical Reports Server (NTRS)

Chrzanowski, J.; Meng-Burany, S.; Xing, W. B.; Curzon, A. E.; Heinrich, B.; Irwin, J. C.; Cragg, R. A.; Zhou, H.; Habib, F.; Angus, V.

1995-01-01

Two series of Y1Ba2Cu3O(z) thin films deposited on (001) LaAl03 single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O2) and substrate temperature of the deposition process Th, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j(sub c) and T(sub c) exhibited T(sub c) greater than or equal to 91 K and j(sub c) greater than or equal to 4 x 106 A/sq cm, at 77 K. Close correlations between the structural quality of the film, the growth parameters (p(O2), T(sub h)) and j(sub c) and T(sub c) have been found.

Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin films

NASA Technical Reports Server (NTRS)

Wosik, J.; Robin, T.; Davis, M.; Wolfe, J. C.; Forster, K.; Deshmukh, S.; Bensaoula, A.; Sega, R.; Economou, D.; Ignatiev, A.

1990-01-01

Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.

Microfabrication of SrRuO3 thin films on various oxide substrates using LaAlO3/BaOx sacrificial bilayers

NASA Astrophysics Data System (ADS)

Harada, Takayuki; Tsukazaki, Atsushi

2018-02-01

Oxides provide various fascinating physical properties that could find use in future device applications. However, the physical properties of oxides are often affected by formation of oxygen vacancies during device fabrication processes. In this study, to develop a damage-free patterning process for oxides, we focus on a lift-off process using a sacrificial template layer, by which we can pattern oxide thin films without severe chemical treatment or plasma bombardment. As oxides need high thin-film growth temperature, a sacrificial template needs to be made of thermally stable and easily etchable materials. To meet these requirements, we develop a sacrificial template with a carefully designed bilayer structure. Combining a thermally and chemically stable LaAlO3 and a water-soluble BaOx, we fabricated a LaAlO3/BaOx sacrificial bilayer. The patterned LaAlO3/BaOx sacrificial bilayers were prepared on oxide substrates by room-temperature pulsed laser deposition and standard photolithography process. The structure of the sacrificial bilayer can be maintained even in rather tough conditions needed for oxide thin film growth: several hundred degrees Celsius under high oxygen pressure. Indeed, the LaAlO3/BaOx bilayer is easily removable by sonication in water. We applied the lift-off method using the LaAlO3/BaOx sacrificial bilayer to a representative oxide conductor SrRuO3 and fabricated micron-scale Hall-bar devices. The SrRuO3 channels with the narrowest line width of 5 μm exhibit an almost identical transport property to that of the pristine film, evidencing that the developed process is beneficial for patterning oxides. We show that the LaAlO3/BaOx lift-off process is applicable to various oxide substrates: SrTiO3, MgO, and Al2O3. The new versatile patterning process will expand the range of application of oxide thin films in electronic and photonic devices.

Influence of Cu-Ti thin film surface properties on antimicrobial activity and viability of living cells.

PubMed

Wojcieszak, Damian; Kaczmarek, Danuta; Antosiak, Aleksandra; Mazur, Michal; Rybak, Zbigniew; Rusak, Agnieszka; Osekowska, Malgorzata; Poniedzialek, Agata; Gamian, Andrzej; Szponar, Bogumila

2015-11-01

The paper describes properties of thin-film coatings based on copper and titanium. Thin films were prepared by co-sputtering of Cu and Ti targets in argon plasma. Deposited coatings consist of 90at.% of Cu and 10at.% of Ti. Characterization of the film was made on the basis of investigations of microstructure and physicochemical properties of the surface. Methods such as scanning electron microscopy, x-ray microanalysis, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, optical profilometry and wettability measurements were used to assess the properties of deposited thin films. An impact of Cu-Ti coating on the growth of selected bacteria and viability of the living cells (line L929, NCTC clone 929) was described in relation to the structure, surface state and wettability of the film. It was found that as-deposited films were amorphous. However, in such surroundings the nanocrystalline grains of 10-15nm and 25-35nm size were present. High surface active area with a roughness of 8.9nm, had an effect on receiving relatively high water contact angle value (74.1°). Such wettability may promote cell adhesion and result in an increase of the probability of copper ion transfer from the film surface into the cell. Thin films revealed bactericidal and fungicidal effects even in short term-contact. High activity of prepared films was directly related to high amount (ca. 51 %) of copper ions at 1+ state as x-ray photoelectron spectroscopy results have shown. Copyright © 2015 Elsevier B.V. All rights reserved.

Effect of composition and strain on the electrical properties of LaNiO3 thin films

NASA Astrophysics Data System (ADS)

Zhu, Mingwei; Komissinskiy, Philipp; Radetinac, Aldin; Vafaee, Mehran; Wang, Zhanjie; Alff, Lambert

2013-09-01

The Ni content of LaNi1-xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.

Stress and plasticity in Cu thin films

NASA Astrophysics Data System (ADS)

Weihnacht, Volker; Brückner, Winfried

1999-11-01

Aim of the work was to get more detailed knowledge about the processes of plasticity in thin Cu films. For this purpose, stress measurements and microstructural investigations have been done on 535nm thick Cu films on oxidized Si substrates. The film stress was measured by wafer-curvature technique using a home-made laser-optical apparatus. This apparatus allowed four-point bending experiments additionally to thermal cycling. It turned out that applied bending strains even higher than 0.5% did not leave significant plastic strains after relief of bending stress. It is concluded, that the elastic interaction of parallel dislocations at the film-substrate interface may play an important role in strain hardening even after small plastic strains.

Evidence for power-law frequency dependence of intrinsic dielectric response in the Ca Cu3 Ti4 O12

NASA Astrophysics Data System (ADS)

Tselev, Alexander; Brooks, Charles M.; Anlage, Steven M.; Zheng, Haimei; Salamanca-Riba, Lourdes; Ramesh, R.; Subramanian, M. A.

2004-10-01

We investigated the dielectric response of CaCu3Ti4O12 (CCTO) thin films grown epitaxially on LaAlO3 (001) substrates by pulsed laser deposition. The dielectric response of the films was found to be strongly dominated by a power law in frequency, typical of materials with localized hopping charge carriers, in contrast to the Debye-like response of the bulk material. The film conductivity decreases with annealing in oxygen, and it suggests that oxygen deficit is a cause of the relatively high film conductivity. With increase of the oxygen content, the room temperature frequency response of the CCTO thin films changes from the response indicating the presence of some relatively low conducting capacitive layers to purely power law, and then toward a frequency independent response with a relative dielectric constant ɛ'˜102 . The film conductance and dielectric response decrease upon decrease of the temperature, with dielectric response being dominated by the power-law frequency dependence. Below ˜80K , the dielectric response of the films is frequency independent with ɛ' close to 102 . The results provide another piece of evidence for an extrinsic, Maxwell-Wagner type, origin of the colossal dielectric response of the bulk CCTO material, connected with electrical inhomogeneity of the bulk material.

Gas-Sensing Performance of M-Doped CuO-Based Thin Films Working at Different Temperatures upon Exposure to Propane

PubMed Central

Rydosz, Artur; Szkudlarek, Aleksandra

2015-01-01

Cupric oxide (CuO) thin films are promising materials in gas sensor applications. The CuO-based gas sensors behaved as p-type semiconductors and can be used as part of an e-nose or smart sensor array for breath analysis. The authors present the investigation results on M-doped CuO-based (M = Ag, Au, Cr, Pd, Pt, Sb, Si) sensors working at various temperatures upon exposure to a low concentration of C3H8, which can be found in exhaled human breath, and it can be considered as a one of the biomarkers of several diseases. The films have been deposited in magnetron sputtering technology on low temperature cofired ceramics substrates. The results of the gas sensors’ response are also presented and discussed. The Cr:CuO-based structure, annealed at 400 °C for 4 h in air, showed the highest sensor response, of the order of 2.7 at an operation temperature of 250 °C. The response and recovery time(s) were 10 s and 24 s, respectively. The results show that the addition of M-dopants in the cupric oxide films effectively act as catalysts in propane sensors and improve the gas sensing properties. The films’ phase composition, microstructure and surface topography have been assessed by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) methods. PMID:26287204

Characterization of Y-Ba-Cu-O thin films and yttria-stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Reade, R. P.; Mao, X. L.; Russo, R. E.

1991-08-01

The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled-orientation yttria-stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ-coated substrates are primarily c-axis oriented and superconducting as deposited. The best YBaCuO films grow on (001)-oriented YSZ intermediate layers and have Tc (R = 0) = 86.0 K and Jc about 3000 A/sq cm at 77 K.

Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

PubMed Central

Gómez-Pozos, Heberto; Arredondo, Emma Julia Luna; Maldonado Álvarez, Arturo; Biswal, Rajesh; Kudriavtsev, Yuriy; Pérez, Jaime Vega; Casallas-Moreno, Yenny Lucero; Olvera Amador, María de la Luz

2016-01-01

A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM) and secondary ion mass spectroscopy (SIMS), respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas. PMID:28787885

Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere.

PubMed

Gómez-Pozos, Heberto; Arredondo, Emma Julia Luna; Maldonado Álvarez, Arturo; Biswal, Rajesh; Kudriavtsev, Yuriy; Pérez, Jaime Vega; Casallas-Moreno, Yenny Lucero; Olvera Amador, María de la Luz

2016-01-29

A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM) and secondary ion mass spectroscopy (SIMS), respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C₃H₈, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 10⁴, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C₃H₈ gas.

Radiation damage effects in far-ultraviolet filters, thin films, and substrates.

PubMed

Keffer, C E; Torr, M R; Zukic, M; Spann, J F; Torr, D G; Kim, J

1994-09-01

Advances in vacuum ultraviolet thin-film filter technology have been made through the use of filter designs with multilayers of materials such as Al(2)O(3), BaF(2), CaF(2), HfO(2), LaF(3), MgF(2), and SiO(2). Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 × 9 R(E) orbit will expose the instrument to approximately 250 krad of radiation. Because to our knowledge no previous studies have been made on the potential radiation damage of these materials in the thin-film format, we report on such an assessment here. Transmittances and reflectances of BaF(2), CaF(2), HfO(2), MgF(2), and SiO(2) thin films on MgF(2) substrates, Al(2)O(3) thin films on fused-silica substrates, uncoated fused silica and MgF(2), and four multilayer filters made from these materials were measured from 120 to 180 nm beforeand after irradiation by 250 krad from a (60)Co gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 to 300 nm indicates 2-5% radiation-induced absorption near 260 nm in some of the samples with MgF(2) substrates. From these measurements we conclude that far-ultraviolet filters made from the materials tested should experience less than 5% change from exposure to up to 250 krad of high-energy radiation in space applications.

Structural and mechanical properties of lanthanide doped La1/3Nb0.8Ta0.2O3 thin films prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Brunckova, Helena; Medvecky, Lubomir; Kovalcikova, Alexandra; Fides, Martin; Mudra, Erika; Durisin, Juraj; Skvarla, Jiri; Kanuchova, Maria

2017-04-01

Transparent Eu and Nd doped lanthanum niobate tantalate La1/3Nb0.8Ta0.2O3 (LNT) thin films (˜150 nm) were prepared by sol-gel/spin-coating process on Pt/SiO2/Si substrates and annealing at 1100 °C. The x-ray diffraction analysis of films confirmed formation of the perovskite La1/3NbO3 and La1/3TaO3 phases with traces of pyrochlore LaNbO4. Eu and Nd doped LNT films were smoother with roughness 17.1 and 25.4 nm in comparison with LNT (43.3 nm). In all films was observed heterogeneous microstructure with the perovskite spherical and pyrochlore needle-like particles. The mechanical properties of films were characterized for the first time by conventional and continuous stiffness (CSM) nanoindentation. The Eu and Nd doped LNT film modulus (E) and hardness (H) were higher than LNT (˜99.8 and 4.4 GPa) determined by conventional nanoindentation. It was measured the significant effect of substrate on properties of Eu or Nd films (H ˜ 5.9 or 4.9 GPa and E ˜ 107.3 or 104.1 GPa) by CSM nanoindentation.

Epitaxial thin films of Dirac semimetal antiperovskite Cu3PdN

NASA Astrophysics Data System (ADS)

Quintela, C. X.; Campbell, N.; Shao, D. F.; Irwin, J.; Harris, D. T.; Xie, L.; Anderson, T. J.; Reiser, N.; Pan, X. Q.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.

2017-09-01

The growth and study of materials showing novel topological states of matter is one of the frontiers in condensed matter physics. Among this class of materials, the nitride antiperovskite Cu3PdN has been proposed as a new three-dimensional Dirac semimetal. However, the experimental realization of Cu3PdN and the consequent study of its electronic properties have been hindered due to the difficulty of synthesizing this material. In this study, we report fabrication and both structural and transport characterization of epitaxial Cu3PdN thin films grown on (001)-oriented SrTiO3 substrates by reactive magnetron sputtering and post-annealed in NH3 atmosphere. The structural properties of the films, investigated by x-ray diffraction and scanning transmission electron microscopy, establish single phase Cu3PdN exhibiting cube-on-cube epitaxy (001)[100]Cu3PdN||(001)[100]SrTiO3. Electrical transport measurements of as-grown samples show metallic conduction with a small temperature coefficient of the resistivity of 1.5 × 10-4 K-1 and a positive Hall coefficient. Post-annealing in NH3 results in the reduction of the electrical resistivity accompanied by the Hall coefficient sign reversal. Using a combination of chemical composition analyses and ab initio band structure calculations, we discuss the interplay between nitrogen stoichiometry and magneto-transport results in the framework of the electronic band structure of Cu3PdN. Our successful growth of thin films of antiperovskite Cu3PdN opens the path to further investigate its physical properties and their dependence on dimensionality, strain engineering, and doping.

Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Çorlu, Tugba; Karaduman, Irmak; Yildirim, Memet Ali; Ateş, Aytunç; Acar, Selim

2017-07-01

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.

Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

NASA Astrophysics Data System (ADS)

Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

2018-05-01

Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

The synthesis of multifunctional porous honey comb-like La2O3 thin film for supercapacitor and gas sensor applications.

PubMed

Yadav, A A; Lokhande, A C; Pujari, R B; Kim, J H; Lokhande, C D

2016-12-15

The porous honey comb-like La 2 O 3 thin films have been synthesized using one step spray pyrolysis method. The influence of sprayed solution quantity on properties of La 2 O 3 thin films is studied using X-ray diffraction, Fourier transform spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, optical absorption and Brunauer-Emmett-Teller techniques. Morphology of La 2 O 3 electrode is controlled with sprayed solution quantity. The supercapacitive properties of La 2 O 3 thin film electrode are investigated using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance techniques. The La 2 O 3 film electrode exhibited the specific capacitance of the 166Fg -1 with 85% stability for the 3000 cycles. The La 2 O 3 film electrode exhibited sensitivity of 68 at 523K for 500ppm CO 2 gas concentration. The possible CO 2 sensing mechanism is discussed. Copyright © 2016 Elsevier Inc. All rights reserved.

High performance batch production of LREBa 2Cu 3O y using novel thin film Nd-123 seed

NASA Astrophysics Data System (ADS)

Muralidhar, M.; Suzuki, K.; Fukumoto, Y.; Ishihara, A.; Tomita, M.

2011-11-01

A batch production for fabrication of LREBa2Cu3Oy (LRE: Sm, Gd, NEG) "LRE-123" pellets are developed in air and Ar-1% O2 using a novel thin film Nd-123 seeds grown on MgO crystals. The SEM and XRD results conformed that the quality and orientation of the seed crystals are excellent. On the other hand, new seeds can withstand temperatures >1100 °C, as a result, the cold seeding process was applied even to grow Sm-123 material in Air. The trapped field observed in the best 45 mm single-grain puck of Gd-123 was in the range of 1.35 T and 0.35 T at 77.3 K and 87.3 K, respectively. The average trapped field at 77.3 K in the 24 mm diameter NEG-123 samples batch lies between 0.9 and 1 T. The maximum trapped field of 1.2 T was recorded at the sample surface. Further, the maximum trapped field of 0.23 T at 77 K was recorded in a sample with 16 mm diameter of Sm-123 with 3 mol% BaO2 addition. As a result we made more then 130 single grain pucks within a couple of months. Taking advantage of the single grain batch processed material, we constructed self-made chilled levitation disk, which was used on the open day of railway technical research Institute. More then 150 children stood on the levitation disk and revel the experience of levitation. The present results prove that a high-performance good-quality class of LREBa2Cu3Oy material can be made by using a novel thin film Nd-123 seeds.

Studies of anisotropic in-plane aligned a-axis oriented YBa(2)Cu(3)O(7-x) thin films

NASA Astrophysics Data System (ADS)

Trajanovic, Zoran

1997-12-01

Due to their layered planar structure, cuprate oxide superconductors possess remarkable anisotropic properties which may be related to their high transition temperatures. In-plane aligned a-axis YBa2Cu3O7 (YBCO) films are good candidates for such anisotropic studies. Furthermore, the full advantage of favorable material characteristics can be then utilized in applications such as vertical SNS junctions with the leads along the b-direction of YBCO and other novel junction configurations. High quality, smooth, in-plane aligned films are obtained on (100) LaSrGaO4. Form x-ray data, the films show complete b- and c-axes separation for the measured a-axis orientation. The anisotropic resistivity ratio (ρ c/ρ b), measured along the two crystallographic axes of single films gives ρ c/ρ b of ≈20 near the transition, with T cs near 90 K. In such films the grain boundary effects can be decoupled from the intrinsic anisotropic properties of YBCO. From oxygen annealing studies it was estimated that the CuO chains supply about 60% of the carriers. From J c measurements it is determined that the orientation of magnetic field with respect to the crystallographic film axes is the primary factor governing the J c values. The angular dependence of J c on the applied magnetic field is compared against various theoretical models showing the best agreement with the modified Ginzburg-Landau's anisotropic mass model (at T ≈ T c) and Tinkham's thin film model (at T < T c). By utilizing the Co-dopant, the coupling between CuO2 planes and the resulting enhancement of the intrinsic anisotropy of YBCO can be studied. Deposition and cooling conditions are shown to be the primary factor that influence the quality of dopant incorporation and the resulting oxygen ordering within the YBCO lattice. Various complex structures and devices utilizing in-plane aligned, a-axis films are presented. Other materials exhibiting in-plane alignment and a-axis growth are described. Optional substrates

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-05-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Investigation of the structural, surface, optical and electrical properties of the Indium doped CuxO thin films deposited by a thermionic vacuum arc

NASA Astrophysics Data System (ADS)

Musaoğlu, Caner; Pat, Suat; Özen, Soner; Korkmaz, Şadan; Mohammadigharehbagh, Reza

2018-03-01

In this study, investigation of some physical properties of In-doped CuxO thin films onto amorphous glass substrates were done. The thin films were depsoied by thermionic vacuum arc technique (TVA). TVA technique gives a thin film with lower precursor impurity according to the other chemical and physical depsoition methods. The microstructural properties of the produced thin films was determined by x-ray diffraction device (XRD). The thickness values were measured as to be 30 nm and 60 nm, respectively. The miller indices of the thin films’ crystalline planes were determined as to be Cu (111), CuO (\\bar{1} 12), CuInO2 (107) and Cu2O (200), Cu (111), CuO (\\bar{1} 12), CuO (\\bar{2} 02), CuInO2 (015) for sample C1 and C2, respectively. The produced In-doped CuO thin films are in polycrystalline structure. The surface properties of produced In doped CuO thin films were determined by using an atomic force microscope (AFM) and field emission scanning electron microscope (FESEM) tools. The optical properties of the In doped CuO thin films were determined by UV–vis spectrophotometer, interferometer, and photoluminescence devices. p-type semiconductor thin film was obtained by TVA depsoition.

Passive optical limiting studies of nanostructured Cu doped ZnO-PVA composite thin films

NASA Astrophysics Data System (ADS)

Tamgadge, Y. S.; Sunatkari, A. L.; Talwatkar, S. S.; Pahurkar, V. G.; Muley, G. G.

2016-01-01

We prepared undoped and Cu doped ZnO semiconducting nanoparticles (NPs) by chemical co-precipitation method and obtained Cu doped ZnO-polyvinyl alcohol (PVA) nanocomposite thin films by spin coating to investigate third order nonlinear optical and optical limiting properties under cw laser excitation. Powder samples of NPs were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy, transmission electron microscopy, ultraviolet-visible (UV-vis) and Fourier transform infrared spectroscopy. XRD pattern and FE-SEM micrograph revealed the presence of hexagonal wurtzite phase ZnO NPs having uniform morphology with average particle size of 20 nm. The presence of excitons and absorption peaks in the range 343-360 nm, revealed by UV-vis study, were attributed to excitons in n = 1 quantum state. Third order NLO properties of all composite thin films were investigated by He-Ne continuous wave (cw) laser of wavelength 632.8 nm using Z-scan technique. Thermally stimulated enhanced values of nonlinear refraction and absorption coefficients were obtained which may be attributed to self-defocusing effect, reverse saturable absorption, weak free carrier absorption and surface states properties originated from thermo optic effect. Optical limiting properties have been studied using cw diode laser of wavelength 808 nm and results are presented.

Investigation on V2O5 Thin Films Prepared by Spray Pyrolysis Technique

NASA Astrophysics Data System (ADS)

Anasthasiya, A. Nancy Anna; Gowtham, K.; Shruthi, R.; Pandeeswari, R.; Jeyaprakash, B. G.

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10mL to 50mL in steps of 10mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.

Studies on interface between In2O3 and CuInTe2 thin films

NASA Astrophysics Data System (ADS)

Ananthan, M. R.; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

2017-10-01

Interface between dc sputtered In2O3 and stepwise flash evaporated CuInTe2 films were studied by probing Si/In2O3/CuInTe2 and Si/CuInTe2/In2O3 structures with the help of glancing angle X-ray diffraction, Rutherford backscattering spectrometry and micro-Raman spectroscopy. The results showed that in Si/In2O3/CuInTe2 structure, a ∼20 nm thick interface consisting of In, Cu and O had formed between In2O3 and CuInTe2 and was attributed to the diffusion of Cu from CuInTe2 into In2O3 film. On the other hand, in Si/CuInTe2/In2O3 structure, homogeneity of the underlying CuInTe2 film was found lost completely. An estimate of the masses of the constituent elements showed that the damage was caused by loss of Te from CuInTe2 film during the growth of In2O3 film on Si/CuInTe2.

Electrochemical properties of thin films of V2O5 doped with TiO2

NASA Astrophysics Data System (ADS)

Moura, E. A.; Cholant, C. M.; Balboni, R. D. C.; Westphal, T. M.; Lemos, R. M. J.; Azevedo, C. F.; Gündel, A.; Flores, W. H.; Gomez, J. A.; Ely, F.; Pawlicka, A.; Avellaneda, C. O.

2018-08-01

The paper presents a systematic study of the electrochromic properties of thin films of V2O5:TiO2 for a possible utilization as counter-electrode in electrochromic devices. The V2O5:TiO2 thin films were prepared by the sol-gel process and deposited on a substrate of fluorine-tin oxide transparent electrode (FTO) using the dip coating technique and heat treatment at 350 °C for 30 min. The films were characterized by chronocoulometry, cyclic voltammetry (CV), UV-Vis, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), atomic force microscopy (AFM), profilometry, and X-ray diffraction (XRD). The best results were obtained for the film of V2O5 with 7.5 mol% of TiO2, which presented highest ion storage capacity of ∼106 mC cm-2 and redox reversibility of 1. The diffusion of the Li+ ions into the thin films was modeled by solving Fick equations with appropriate boundary conditions for a plane sheet geometry. Besides that, these films showed optical modulation of 35% at 633 nm after coloration and bleaching. The XRD patterns revealed that the films have an orthorhombic crystal structure; the AFM and the profilometry confirmed roughness and thickness of 16.76 and 617 nm, respectively.

Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

PubMed

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

Photoemission study of absorption mechanisms in Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+δ, BaBiO3, and Nd1.85Ce0.15CuO4

NASA Astrophysics Data System (ADS)

Lindberg, P. A. P.; Shen, Z.-X.; Wells, B. O.; Dessau, D. S.; Ellis, W. P.; Borg, A.; Kang, J.-S.; Mitzi, D. B.; Lindau, I.; Spicer, W. E.; Kapitulnik, A.

1989-11-01

Photoemission measurements in the constant-final-state (absorption) mode were performed on three different classes of high-temperature superconductors Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+δ, BaBiO3, and Nd1.85Ce0.15CuO4 using synchrotron radiation from 20 to 200 eV. Absorption signals from all elements but Ce are identified. The results firmly show that the Bi 6s electrons are more delocalized in BaBiO3 than in Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+δ, in agreement with the results of band-structure calculations. Differences in the absorption signals due to O and Bi excitations between BaBiO3 and Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+δ are discussed. Delayed absorption onsets attributed to giant resonances (Ba 4d-->4f, La 4d-->4f, and Nd 4d-->4f transitions) are also reported.

Selective interlayer ferromagnetic coupling between the Cu spins in YBa2Cu3O7−x grown on top of La0.7Ca0.3MnO3

PubMed Central

Huang, S. W.; Wray, L. Andrew; Jeng, Horng-Tay; Tra, V. T.; Lee, J. M.; Langner, M. C.; Chen, J. M.; Roy, S.; Chu, Y. H.; Schoenlein, R. W.; Chuang, Y.-D.; Lin, J.-Y.

2015-01-01

Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa2Cu3O7−x (YBCO) superconductor when it is grown on top of ferromagnetic La0.7Ca0.3MnO3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO2 but not with La0.7Ca0.3O interfacial termination. Such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO2 plane at the La0.7Ca0.3O and MnO2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems. PMID:26573394

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn

2015-08-24

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. Themore » Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.« less

Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

NASA Astrophysics Data System (ADS)

Ramesh, R.; Chan, W. K.; Wilkens, B.; Gilchrist, H.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

1992-09-01

Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Keating, S.

2016-04-14

We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution ofmore » electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.« less

Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com; Panchal, A.K.

2016-05-06

First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the ordermore » of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.« less

Current-voltage characteristics and electroresistance in LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 thin film composites.

PubMed

Gadani, Keval; Keshvani, M J; Rajyaguru, Bhargav; Dhruv, Davit; Kataria, B R; Joshi, A D; Asokan, K; Shah, N A; Solanki, P S

2017-11-08

In this communication, we report results of the electrical transport properties across the interface of composites consisting of n-type LaMnO 3-δ (LMO) and p-type La 0.7 Ca 0.3 MnO 3 (LCMO) manganites grown on LaAlO 3 (LAO) single crystalline substrates using low cost wet chemical solution deposition (CSD) and sophisticated, well-controlled dry chemical vapor deposition (CVD) chemical techniques. The XRD ϕ-scan studies reveal the single crystalline nature of both bilayered composites, with parallel epitaxial growth of LMO and LCMO layers onto the LAO substrate. The valence states of Mn ions in both layers of both composites were identified by performing X-ray photoelectron spectroscopy (XPS). The I-V characteristics of the LMO/LCMO interfaces show strong backward diode-like behavior at higher applied voltages well above the crossover voltage (V NB ). Below V NB , the interfaces demonstrate normal diode-like characteristics throughout the studied temperature range. The electric field-induced modulation of the LMO/LCMO junction resistance of the interfaces has been observed. Electric field-dependent electroresistance (ER) modifications at different temperatures have also been studied. The electrical transport properties have been discussed in the context of various mechanisms, such as charge injection, tunneling, depletion region modification and thermal processes across the interface. The effects of structurally and chemically developed sharp interfaces between the LMO and LCMO layers on the transport properties of the presently studied bilayered thin film composites have been discussed on the basis of correlation between the physicochemical characterization and charge transport behavior. A comparison of different aspects of the transport properties has been presented in the context of the structural strain and crystallinity of the composites grown using both wet and dry chemical techniques.

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

Critical current density of high-quality Bi2Sr2Ca2Cu3Ox thin films prepared by metalorganic chemical-vapor deposition

NASA Astrophysics Data System (ADS)

Yamasaki, H.; Endo, K.; Nakagawa, Y.; Umeda, M.; Kosaka, S.; Misawa, S.; Yoshida, S.; Kajimura, K.

1992-10-01

Critical current densities Jc were measured in as-deposited, c-axis-oriented Bi2Sr2Ca2Cu3Ox thin films with Tc values as high as 97 K, which were prepared by metalorganic chemical-vapor deposition. These films showed high Jc (≳109 A/m2) at 77.3 K in high magnetic fields (≥1 T, H∥a-b plane). The best values are 3.3×109 A/m2 at 1 T and 9.1×108 A/m2 at 8 T, which are the highest Jc for Bi-oxide thin films among those reported so far. There were no signs of weak links in the Jc(H) behavior, and the surface morphology examined by scanning electron microscopy showed no apparent grain boundaries. The values of Jc decreased sharply when the applied field deviated from the a-b plane, and went to zero at the angles where the field component in the c direction is nearly equal to the irreversibility field Hc2* parallel to the c axis. The angular dependence of Jc of these films is most reasonably explained by the theory of intrinsic pinning.

Direct measurement of ferromagnetic ordering in biaxially strained LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Klie, R. F.; Yuan, T.; Tanase, M.; Yang, G.; Ramasse, Q.

2010-02-01

LaCoO3 undergoes a transition from a nonmagnetic to a paramagnetic semiconductor at 80 K, associated with a spin-state transition of the Co3+ ions. It was proposed that the temperature of the spin-state transition depends strongly on the LaCoO3 lattice parameter, suggesting that strain can stabilize different spin states at different temperatures. By combining atomic-resolution Z-contrast imaging, electron diffraction, and angular-resolved electron energy-loss spectroscopy (EELS) with in situ cooling experiments, we show that epitaxially strained LaCoO3 (001) thin films grown on LaAlO3 (001) do not undergo a low temperature spin-state transition. Our EELS study explores the origins of the ferromagnetic ordering in strained LaCoO3 films.

Non-linear optical probing of strain-enabled ferroelectricity in CaTiO3 thin films

NASA Astrophysics Data System (ADS)

Vlahos, Eftihia; Brooks, Charles; Ecklund, Carl Johan; Biegalski, Mike; Rabe, Karin; Schlom, Darrell; Gopalan, Venkatraman

2010-03-01

First principles calculations predict CaTiO3, under tensile strain, to become ferroelectric with a spontaneous polarization of up to 0.5 C/m^2. Comparative second harmonic generation (SHG) studies of a series of strained CaTiO3 thin films were undertaken in order to determine their transition temperature and point group symmetry. The epitaxial strain ranged from -1.7% to 3.3%. Symmetry analysis of the SHG polar plots confirms that for the samples under tensile strain, the polarization is along the <110>p directions and the point group of the ferroelectric phase is mm2. SHG ``hysteresis'' loops were also obtained; these show clear switching. The experimental results are in excellent agreement with the first principles calculations predictions, and low temperature dielectric measurements that were performed on the same samples.

Chemical spray pyrolysis of Tl-Ba-Ca-Cu-O high-T(sub c) superconductors for high-field bitter magnets

NASA Technical Reports Server (NTRS)

Derochemont, L. Pierre; Zhang, John G.; Squillante, Michael R.; Hermann, A. M.; Duan, H. M.; Andrews, Robert J.; Kelliher, Warren C.

1991-01-01

The deposition of Tl-Ba-Ca-Cu-O thick films by spray pyrolyzing a Ba-Ca-Cu-O precursor film and diffusing thallium into the film to form the superconducting phase is examined. This approach was taken to reduce exposure to thallium and its health and safety hazards. The Tl-Ba-Ca-Cu-O system was selected because it has very attractive features which make it appealing to device and manufacturing engineering. Tl-Ba-Ca-Cu-O will accommodate a number of superconducting phases. This attribute makes it very forgiving to stoichiometric fluctuations in the bulk and film. It has excellent thermal and chemical stability, and appears to be relatively insensitive to chemical impurities. Oxygen is tightly bound into the systems, consequently there is no orthorhombic (conductor) to tetragonal (insulator) transition which would affect a component's lifetime. More significantly, the thallium based superconductors appear to have harder magnetic properties than the other high-Tc oxide ceramics. Estimates using magnetoresistance measurements indicate that at 77 K Tl2Ba2CaCu2O10 will have an upper critical field, H(sub c2) fo 26 Tesla for applied fields parallel to the c-axis and approximately 1000 Tesla for fields oriented in the a-b plane. Results to date have shown that superconducting films can be reproducibly deposited on 100 oriented MgO substrates. One film had a zero resistance temperature of 111.5 K. Furthermore, x ray diffraction analysis of the films showed preferential c-axis orientation parallel to the plane of the substrate. These results have now made it possible to consider the manufacture of a superconducting tape wire which can be configured into a topology useful for high-field magnet designs. The research which leads to the preparation of these films and plans for further development are reviewed.

Ferromagnetic order in epitaxially strained LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Fuchs, D.; Pinta, C.; Schwarz, T.; Schweiss, P.; Nagel, P.; Schuppler, S.; Schneider, R.; Merz, M.; Roth, G.; v. Löhneysen, H.

2007-04-01

LaCoO3 films grown epitaxially on ⟨001⟩ oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates by pulsed laser deposition exhibit ferromagnetic ordering below a critical temperature, Tc , of 85K . Polycrystalline films of LaCoO3 prepared in the same way did not show ferromagnetic order down to T≈5K , and their temperature dependent susceptibility was identical to that of bulk LaCoO3 . The ferromagnetism in epitaxial films is not simply a property of the surface region, rather it extends over the complete film thickness, as shown by the linear increase of the saturated magnetic moment with increasing film thickness. We discuss this surprising result in terms of epitaxial tensile strain via the properly chosen substrate inducing ferromagnetic order.

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Ishizawa, Mamoru; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

2018-02-01

We have grown Bi0.9Sr0.1CuSeO epitaxial thin films on MgO and SrTiO3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2/ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s, and Bi and Cu deficiencies in the films.

Combinatorial studies of (1-x)Na0.5Bi0.5TiO3-xBaTiO3 thin-film chips

NASA Astrophysics Data System (ADS)

Cheng, Hong-Wei; Zhang, Xue-Jin; Zhang, Shan-Tao; Feng, Yan; Chen, Yan-Feng; Liu, Zhi-Guo; Cheng, Guang-Xi

2004-09-01

Applying a combinatorial methodology, (1-x)Na0.5Bi0.5TiO3-xBaTiO3 (NBT-BT) thin-film chips were fabricated on (001)-LaAlO3 substrates by pulsed laser deposition with a few quaternary masks. A series of NBT-BT library with the composition of BT ranged from 0 to 44% was obtained with uniform composition and well crystallinity. The relation between the concentration of NBT-BT and their structural and dielectric properties were investigated by x-ray diffraction (XRD), evanescent microwave probe, atomic force microscopy, and Raman spectroscopy. An obvious morphotropic phase boundary (MPB) was established to be about 9% BT by XRD, Raman frequency shift, and dielectric anomaly, different from the well-known MPB of the materials. The result shows the high efficiency of combinatorial method in searching new relaxor ferroelectrics.

The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

NASA Astrophysics Data System (ADS)

Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

2016-04-01

Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

Artificially layered films of CuBa{sub 2} (Ca{sub 1{minus}x}Sr{sub x}){sub n{minus}1}Cu{sub n}O{sub y} grown using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aruta, C.; Balestrino, G.; Martellucci, S.

We have shown that the pulsed laser deposition technique (PLD) can be successfully used to grow artificially layered films of the CuBa{sub 2}(Ca{sub 1{minus}x}Sr{sub x}){sub n{minus}1}Cu{sub n}O{sub y} compound using only two targets having nominal composition BaCuO{sub y} and (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y}, respectively. n was varied between 2 and 5. We have demonstrated, by a kinematic analysis of the x-ray diffraction spectra that the average random discrete thickness fluctuations which affect both the BaCuO{sub y} and (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y} layers are much smaller than one atomic layer. Such features are confirmed by the appearance of sharp peaks evenmore » for the n=2 artificially layered structure where only one (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y} cell is deposited in the stacking sequence. These results show that truly new structures can be obtained by a layer by layer deposition technique with a low interfacial disorder and give strong support to the idea of synthesizing new artificial high T{sub c} structures by the PLD technique.{copyright} {ital 1997 American Institute of Physics.}« less

Influences of film thickness on the structural, electrical and optical properties of CuAlO2 thin films

NASA Astrophysics Data System (ADS)

Dong, Guobo; Zhang, Ming; Wang, Mei; Li, Yingzi; Gao, Fangyuan; Yan, Hui; Diao, Xungang

2014-07-01

CuAlO2 films with different thickness were prepared by the radio frequency magnetron sputtering technique. The structural, electrical and optical properties of CuAlO2 were studied by X-ray diffraction, atomic force microscope, UV-Vis double-beam spectrophotometer and Hall measurements. The results indicate that the single phase hexagonal CuAlO2 is formed and the average grain size of CuAlO2 films increases with increasing film thickness. The results also exhibit that the lowering of bandgap and the increase of electrical conductivity of CuAlO2 films with the increase of their thickness, which are attributed to the improvement of the grain size and the anisotropic electrical property. According to the electrical and optical properties, the biggest figure of merit is achieved for the CuAlO2 film with the appropriate thickness of 165 nm.

Electronic Structure of TlBa2CaCu2O(7-Delta)

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Novikov, D. L.; Freeman, A. J.; Siegal, M. P.

1997-01-01

The core levels of TlBa2CaCu2O(7-delta) (Tl-1212) epitaxial films have been measured with X-ray photoelectron spectroscopy (XPS). The valence electronic structure has been determined using the full-potential linear muffin-tin-orbital band-structure method and measured with XPS. The calculations show that a van Hove singularity (VHS) lies above the Fermi level (E(sub F)) for the stoichiometric compound (delta = 0.5), while for 50% oxygen vacancies in the Tl-O layer (delta = 0.5) E(sub F) is in close proximity to the VHS. Samples annealed in nitrogen (to reduce the hole overdoping by the removal of oxygen) exhibit higher core-level binding energies and a higher T(sub c), consistent with a shift of E(sub F) closer to the VHS. Comparisons are made to the core levels and valence bands of Tl2Ba2CaCu2O(8 + delta)(Tl-2212) and HgBa2CaCu2O)6 + delta) (Hg- 1212). The similarity of the Cu 2p(sub 3/2) spectra for Tl-1212 and Tl-2212 indicates that the number of Tl-O layers has little effect on the Cu-O bonding. However, the Tl-1212 and Hg-1212 Cu 2p(sub 3/2) signals exhibit differences which suggest that the replacement of T(sup 3+) with Hg(sup 2+) results in a decrease in the O 2p right arrow Cu 3d charge-transfer energy and differences in the probabilities of planar vs apical oxygen charge transfer and/or Zhang-Rice singlet-state formation. Differences between the Tl-1212 and the Tl-2212 and Hg-1212 measured valence bands are consistent with the calculated Cu 3d and (Tl,Hg) 6s/5d partial densities of states.

The chemisorption and reactions of formic acid on Cu films on ZnO (000 overline1)-O

NASA Astrophysics Data System (ADS)

Ludviksson, A.; Zhang, R.; Campbell, Charles T.; Griffiths, K.

1994-06-01

The adsorption and reactions of formic acid (HCOOD : HCOOH = 3:1) on the oxygen-terminated ZnO(0001¯)-O surface and on thin Cu films deposited on the ZnO(0001¯)-O surface have been studied with temperature programmed desorption (TPD) and XPS. Small amounts of formic acid dissociate at defect sites on clean ZnO(0001¯)-O to yield surface formate (HCOO). The acid D(H) from this dissociation does not reappear in TPD, and is lost to the ZnO bulk, as confirmed by nuclear reaction analysis. The surface HCOO decomposes to yield nearly simultaneous CO 2 (37%), CO (63%) and H 2 TPD peaks at 560 K. Substantial amounts of D (˜ 20%) are incorporated in this hydrogen TPD peak resulting from formate decomposition at ZnO defects, indicating that bulk D is readily accessible. Submonolayer and multilayer Cu films that are deposited at 130 K and partially cover the ZnO surface as 2D and 3D islands adsorb formic acid and decompose it into formate and hydrogen much like the Cu(110) surface. The surface formate from the Cu film decomposes at 470-500 K to give primarily CO 2 and H 2, also much like Cu(110), although atom-thin Cu islands also give ˜ 40% CO. Annealed Cu films give formate decomposition peaks at 25-50 K lower in temperature, attributed to thickening and ordering of the Cu islands to form Cu(111)-like sites. The acid D(H) atom from the formic acid is partially lost by hydrogen spillover from the Cu islands into the ZnO substrate, especially for thin Cu films. This effect partially desorbs and is enhanced upon preannealing the Cu layers, due to increased H diffusion rates across the annealed Cu islands, and/or the decrease in island size. Bulk D(H) is slowly removed as D 2, HD and H 2 above 400 K in diffusion-limited desorption, catalyzed by Cu.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

PubMed

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Research in LPE of Doped LiNbO3 and LiTaO3 Thin Films.

DTIC Science & Technology

1981-06-01

garnet films grown on single crystal garnet substrates by the LPE technique for magnetic bubble applica- tions. The choice of substrate and film are...AD-Al07 686 ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS -EUTC F/G 2RESEARCH IN LPE OF DOPED LINBO3 AND LITA03 THIN FILMS .(U JUN Al R R NEUR...Research in LPE of Doped LiNbO3 and LiTa03 Final Report Thin Films 04/01/77 through 03/31/81 6. PERFORMING ORG. REPORT NUM9ER ERC41004.11FR 7. AUTNOR

TlCaBaCuO high Tc superconducting microstrip ring resonators designed for 12 GHz

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1993-01-01

Microwave properties of sputtered Tl-Ca-Ba-Cu-O thin films were investigated by designing, fabricating, and testing microstrip ring resonators. Ring resonators designed for 12 GHz fundamental resonance frequency, were fabricated and tested. From the unloaded Q values for the resonators, the surface resistance was calculated by separating the conductor losses from the total losses. The penetration depth was obtained from the temperature dependence of resonance frequency, assuming that the shift in resonance frequency is mainly due to the temperature dependence of penetration depth. The effective surface resistance at 12 GHz and 77 K was determined to be between 1.5 and 2.75 mOmega, almost an order lower than Cu at the same temperature and frequency. The effective penetration depth at 0 K is approximately 7000 A.

Selective interlayer ferromagnetic coupling between the Cu spins in YBa 2Cu 3O 7–x grown on top of La 0.7Ca 0.3MnO 3

DOE PAGES

Huang, S. W.; Wray, L. Andrew; Jeng, Horng -Tay; ...

2015-11-17

Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa 2Cu 3O 7–x (YBCO) superconductor when it is grown on top of ferromagnetic La 0.7Ca 0.3MnO 3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO 2 but not withmore » La 0.7Ca 0.3O interfacial termination. Thus, such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO 2 plane at the La 0.7Ca 0.3O and MnO 2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems.« less

Photoexcited Carrier Dynamics of Cu 2S Thin Films

DOE PAGES

Riha, Shannon C.; Schaller, Richard D.; Gosztola, David J.; ...

2014-11-11

Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu 2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this paper, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu 2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deducedmore » from the spectral evolution from 300 fs to 300 μs. Finally, revealing the effects of grain morphology on the photophysical properties of Cu 2S is a crucial step toward reaching high efficiencies in operationally stable Cu 2S thin film photovoltaics.« less

Chemically prepared La2Se3 nanocubes thin film for supercapacitor application.

PubMed

Patil, S J; Lokhande, V C; Chodankar, N R; Lokhande, C D

2016-05-01

Lanthanum selenide (La2Se3) nanocubes thin film is prepared via successive ionic layer adsorption and reaction (SILAR) method and utilized for energy storage application. The prepared La2Se3 thin film is characterized by X-ray diffraction, field emission scanning electron microscopy and contact angle measurement techniques for structural, surface morphological and wettability studies, respectively. Energy dispersive X-ray microanalysis (EDAX) is performed in order to obtain the elemental composition of the thin film. The La2Se3 film electrode shows a maximum specific capacitance of 363 F g(-1) in a 0.8 M LiClO4/PC electrolyte at a scan rate of 5 mV s(-1) within 1.3 V/SCE potential range. The specific capacitive retention of 83 % of La2Se3 film electrode is obtained over 1000 cyclic voltammetry cycles. The predominant performance, such as high energy (80 Wh kg(-1)) and power density (2.5 kW kg(-1)), indicates that La2Se3 film electrode facilitates fast ion diffusion during redox processes. Copyright © 2016 Elsevier Inc. All rights reserved.