Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Effect of interface layer on the performance of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

2015-02-01

Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-05-01

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100's of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwater.

Linear laser diode arrays for improvement in optical disk recording for space stations

NASA Technical Reports Server (NTRS)

Alphonse, G. A.; Carlin, D. B.; Connolly, J. C.

1990-01-01

The design and fabrication of individually addressable laser diode arrays for high performance magneto-optic recording systems are presented. Ten diode arrays with 30 mW cW light output, linear light vs. current characteristics and single longitudinal mode spectrum were fabricated using channel substrate planar (CSP) structures. Preliminary results on the inverse CSP structure, whose fabrication is less critically dependent on device parameters than the CSP, are also presented. The impact of systems parameters and requirements, in particular, the effect of feedback on laser design is assessed, and techniques to reduce feedback or minimize its effect on systems performance, including mode-stabilized structures, are evaluated.

Quasi-passive heat sink for high-power laser diodes

NASA Astrophysics Data System (ADS)

Vetrovec, John

2009-02-01

We report on a novel heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink uses a liquid coolant flowing at high speed in a miniature closed and sealed loop. Diode waste heat is received at high flux and transferred to environment, coolant fluid, heat pipe, or structure at a reduced flux. When pumping solid-state or alkali vapor lasers, diode wavelength can be electronically tuned to the absorption features of the laser gain medium. This paper presents the heat sink physics, engineering design, performance modeling, and configurations.

High-brightness tapered laser diodes with photonic crystal structures

NASA Astrophysics Data System (ADS)

Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

2018-02-01

Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

High power multiple wavelength diode laser stack for DPSSL application without temperature control

NASA Astrophysics Data System (ADS)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the semiconductor device group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. These efforts, in addition to yielding diodes with ns switching speeds, led to the development in early 1962 of diodes which emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the Semiconductor Device Group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. these efforts, in addition to yielding diodes which ns switching speeds, led to the development in early 1962 of diodes that emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Rapid Prototyping: State of the Art

DTIC Science & Technology

2003-10-23

Rapid Prototyping SCS Solid Creation System SLM Selective Laser Melting SLP Solid Laser diode Plotter SLS Selective Laser Sintering SOAR State of the...121,000, respectively. SLP stands for Sold Laser Diode Plotter. The machines are relatively slow and parts are small, so, to date, the products have been...Gigerenzer, H., “Directed Laser Welding of Metal Matrix Composite Structures for Space Based Applications,“ Triton Systems Inc., Chelmsford, MA., 1

The Influence of Geometrical Structure of AlInGaN Double Quantum Well (DQWs) UV Diode Laser on Its Performance and Operating Parameters

NASA Astrophysics Data System (ADS)

Ghazai, A. J.; Thahab, S. M.; Hassan, H. Abu; Hassan, Z.

2010-07-01

The development of efficient MQWs active regions of quaternary InAlGaN in the ultraviolet (UV) region is an engaging challenge by itself. Demonstrating lasers at such low wavelength will require resolving a number of materials, growth and device design issues. However, the quaternary AlInGaN represents a more versatile material since the bandgap and lattice constant can be independently varied. We report a quaternary AlInGaN double-quantum wells (DQWs) UV laser diode (LDs) study by using the simulation program of Integrated System Engineering-Technical Computer Aided Design (ISE TCAD). Advanced physical models of semiconductor properties were used. In this paper, the enhancement in the performance of AlInGaN laser diode can be achieved by optimizing the laser structure geometry design. The AlInGaN laser diodes operating parameters such as internal quantum efficiency ηi, internal loss αi and transparency threshold current density show effective improvements that contribute to a better performance.

Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

PubMed

Maeda, Y

1994-01-10

Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Large spot transpupillary thermotherapy: a quicker laser for treatment of high risk prethreshold retinopathy of prematurity - a randomized study.

PubMed

Shah, Parag K; Narendran, V; Kalpana, N

2011-01-01

To compare structural and functional outcome and time efficiency between standard spot sized conventional pulsed mode diode laser and continuous mode large spot transpupillary thermotherapy (LS TTT) for treatment of high risk prethreshold retinopathy of prematurity (ROP). Ten eyes of five preterm babies having bilateral symmetrical high risk prethreshold ROP were included in this study. One eye of each baby was randomized to get either standard spot sized conventional pulsed mode diode laser or continuous mode LS TTT. There was no significant difference between structural or functional outcome in either group. The mean time taken for conventional diode laser was 20.07 minutes, while that for LS TTT was 12.3 minutes. LS TTT was 40% more time efficient than the conventional laser. It may be better suited for the very small fragile premature infants as it is quicker than the conventional laser.

Analysis of High-Power Diode Laser Heating Effects on HY-80 Steel for Laser Assisted Friction Stir Welding Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiechec, Maxwell; Baker, Brad; McNelley, Terry

In this research, several conditions of high power diode laser heated HY-80 steel were characterized to determine the viability of using such lasers as a preheating source before friction stir welding in order to reduce frictional forces thereby reducing tool wear and increasing welding speeds. Differences in microstructures within heat affected zones were identified at specific laser powers and traverse speeds. Vickers hardness values were recorded and analyzed to validate the formation of additional martensite in diode laser heated regions of HY-80 steel. Conditions that produced little to no additional martensite were identified and relationships among high power diode lasermore » power, traverse speed, and martensite formation were determined. The development of heat affected zones, change in grain structure, and creation of additional martensite in HY-80 can be prevented through the optimization of laser amperage and transverse speed.« less

Antibacterial Effect of Diode Laser in Pulpectomy of Primary Teeth.

PubMed

Bahrololoomi, Zahra; Fekrazad, Reza; Zamaninejad, Shiva

2017-01-01

Introduction: Laser irradiation has been suggested as an adjunct to traditional methods of canal preparation but few studies are available on the antibacterial effect of diode laser in pulpectomy of primary teeth. The purpose of the present study is to investigate the antibacterial effect of diode laser in pulpectomy of primary teeth, in addition to define the optimal and harmless diode lasing conditions in the root canal. Methods: A total of 125 single rooted primary teeth were selected. After traditional canal cleaning, they were divided in 2 groups. Sixty-five specimens after culturing of Enterococcus faecalis into the canals, were divided in 3 groups: (1) traditional canal cleaning with 0.5% NaOCl irrigation, (2) method of group 1+ 1.5 W diode laser (980 nm, pulse), (3) without treatment (5 specimens). Then the specimens were cultured and after colony counting under light microscope, were statistically analyzed by Kruskal-Wallis and Mann-Whitney tests. For 60 specimens, temperature rise of apical and cervical parts of the external root surface were measured using 2 thermocouple type K, when radiating a 1.5 W diode laser into the canal. Results: In the first experiment, the diode laser group showed tmost reduction in bacterial count. And in the second experiment, the mean temperature rise of external root surface was less than the threshold of periodontal ligament (PDL) damage. Conclusion: Diode laser with a power output of 1.5 W, is effective in reduction of E. faecalis bacterial count without damaging periodontal structures.

Distributed feedback laser diode integrated with distributed Bragg reflector for continuous-wave terahertz generation.

PubMed

Kim, Namje; Han, Sang-Pil; Ryu, Han-Cheol; Ko, Hyunsung; Park, Jeong-Woo; Lee, Donghun; Jeon, Min Yong; Park, Kyung Hyun

2012-07-30

A widely tunable dual mode laser diode with a single cavity structure is demonstrated. This novel device consists of a distributed feedback (DFB) laser diode and distributed Bragg reflector (DBR). Micro-heaters are integrated on the top of each section for continuous and independent wavelength tuning of each mode. By using a single gain medium in the DFB section, an effective common optical cavity and common modes are realized. The laser diode shows a wide tunability of the optical beat frequency, from 0.48 THz to over 2.36 THz. Continuous wave THz radiation is also successfully generated with low-temperature grown InGaAs photomixers from 0.48 GHz to 1.5 THz.

Theoretical and experimental aspects of laser cutting with a direct diode laser

NASA Astrophysics Data System (ADS)

Costa Rodrigues, G.; Pencinovsky, J.; Cuypers, M.; Duflou, J. R.

2014-10-01

Recent developments in beam coupling techniques have made it possible to scale up the power of diode lasers with a laser beam quality suitable for laser cutting of metal sheets. In this paper a prototype of a Direct Diode Laser (DDL) source (BPP of 22 mm-mrad) is analyzed in terms of efficiency and cut performance and compared with two established technologies, CO2 and fiber lasers. An analytical model based on absorption calculations is used to predict the performance of the studied laser source with a good agreement with experimental results. Furthermore results of fusion cutting of stainless steel and aluminium alloys as well as oxygen cutting of structural steel are presented, demonstrating that industrial relevant cutting speeds with high cutting quality can now be achieved with DDL.

Numerical simulations of novel high-power high-brightness diode laser structures

NASA Astrophysics Data System (ADS)

Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

2001-07-01

One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

Optoelectronics Research Center

DTIC Science & Technology

1992-05-16

dot structures in Si and related materials. External cavity operation of diode lasers has provided a wealth of information on internal device physics...new class of optical information processing. A major feature of the AFOSR OERC has been interactions with the Air Force Phillips Laboratory and with...structures in Si and related materials. External cavity operation of diode lasers has provided a wealth of information on internal device physics and

Development and thermal management of 10 kW CW, direct diode laser source

NASA Astrophysics Data System (ADS)

Zhu, Hongbo; Hao, Mingming; Zhang, Jianwei; Ji, Wenyu; Lin, Xingchen; Zhang, Jinsheng; Ning, Yongqiang

2016-01-01

We report on the development of direct diode laser source with high-power and high reliability. The laser source was realized by the polarization and wavelength combination of four diode laser stacks. When at the operating current of 122 A, the source was capable of producing 10,120 W output while maintaining 46% electro-optical conversion efficiency. The maximum temperature on the lens was decreased from 442.2 K to 320 K by utilizing an efficient thermal dissipation structure, and the corresponding maximum von Mises stress was reduced from 75.4 MPa to 14 MPa. In addition, a reliability test demonstrated that our laser source was reliable and potential in the applications of laser cladding and heat treatment.

Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

NASA Astrophysics Data System (ADS)

Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Hennig, P.

2007-02-01

There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 μs, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.

CW 50W/M2 = 10.9 diode laser source by spectral beam combining based on a transmission grating.

PubMed

Zhang, Jun; Peng, Hangyu; Fu, Xihong; Liu, Yun; Qin, Li; Miao, Guoqing; Wang, Lijun

2013-02-11

An external cavity structure based on the -1st transmission grating is introduced to spectral beam combining a 970 nm diode laser bar. A CW output power of 50.8 W, an electro-optical conversion efficiency of 45%, a spectral beam combining efficiency of 90.2% and a holistic M(2) value of 10.9 are achieved. This shows a way for a diode laser source with several KW power and diffraction-limited beam quality at the same time.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

NASA Astrophysics Data System (ADS)

Xu, Yun; Zhu, Xiaopeng; Ye, Xiaojun; Kang, Xiangning; Cao, Qing; Guo, Liang; Chen, Lianghui

2004-05-01

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

Novel high-brightness fiber coupled diode laser device

NASA Astrophysics Data System (ADS)

Haag, Matthias; Köhler, Bernd; Biesenbach, Jens; Brand, Thomas

2007-02-01

High brightness becomes more and more important in diode laser applications for fiber laser pumping and materials processing. For OEM customers fiber coupled devices have great advantages over direct beam modules: the fiber exit is a standardized interface, beam guiding is easy with nearly unlimited flexibility. In addition to the transport function the fiber serves as homogenizer: the beam profile of the laser radiation emitted from a fiber is symmetrical with highly repeatable beam quality and pointing stability. However, efficient fiber coupling requires an adaption of the slow-axis beam quality to the fiber requirements. Diode laser systems based on standard 10mm bars usually employ beam transformation systems to rearrange the highly asymmetrical beam of the laser bar or laser stack. These beam transformation systems (prism arrays, lens arrays, fiber bundles etc.) are expensive and become inefficient with increasing complexity. This is especially true for high power devices with small fiber diameters. On the other hand, systems based on single emitters are claimed to have good potential in cost reduction. Brightness of the inevitable fiber bundles, though, is limited due to inherent fill-factor losses. At DILAS a novel diode laser device has been developed combining the advantages of diode bars and single emitters: high brightness at high reliability with single emitter cost structure. Heart of the device is a specially tailored laser bar (T-Bar), which epitaxial and lateral structure was designed such that only standard fast- and slow-axis collimator lenses are required to couple the beam into a 200μm fiber. Up to 30 of these T-Bars of one wavelength can be combined to reach a total of > 500W ex fiber in the first step. Going to a power level of today's single emitter diodes even 1kW ex 200μm fiber can be expected.

Diode laser prostatectomy (VLAP): initial canine evaluation

NASA Astrophysics Data System (ADS)

Kopchok, George E.; Verbin, Chris; Ayres, Bruce; Peng, Shi-Kaung; White, Rodney A.

1995-05-01

This study evaluated the acute and chronic effects of diode laser (960 nm) prostatectomy using a Prolase II fiber in a canine model (n equals 5). The laser fiber consists of a 1000 um quartz fiber which reflects a cone of laser energy, at 45 degree(s) to the axis of the fiber, into the prostatic urethra (Visual Laser Ablation of Prostate). Perineal access was used to guide a 15.5 Fr cystoscope to the level of the prostate. Under visual guidance and continual saline irrigation, 60 watts of laser power was delivered for 60 seconds at 3, 9, and 12 o'clock and 30 seconds at the 6 o'clock (posterior) positions for a total energy fluence of 12,600 J. One prostate received an additional 60 second exposure at 3 and 9 o'clock for a total fluence of 19,800 J. The prostates were evaluated at one day (n equals 1) and 8 weeks (n equals 4). The histopathology of laser effects at one day show areas of necrosis with loss of glandular structures and stromal edema. Surrounding this area was a zone of degenerative glandular structures extending up to 17.5 mm (cross sectional diameter). The histopathology of the 8 week laser treated animals demonstrated dilated prostatic urethras with maximum cross- sectional diameter of 23.4 mm (mean equals 18.5 +/- 3.9 mm). This study demonstrates the effectiveness of diode laser energy for prostatic tissue coagulation and eventual sloughing. The results also demonstrate the safety of diode laser energy, with similar tissue response as seen with Nd:YAG laser, for laser prostatectomy.

Stimulated emission in quantum well laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.

1989-07-03

We observe that stimulated emission from inhomogeneously pumped quantum well laser diodes is shifted down in energy compared with the subband transition energy. Measured spontaneous emission spectra show that this stimulated emission is due to band-to-band transitions shifted by renormalization at high injected carrier densities, and we suggest that this same mechanism explains reported observations of stimulated emission from inhomogeneously photopumped structures which previously have been interpreted as evidence for longitudinal optic (LO) phonon participation. We show that LO phonon participation cannot account for the photon energy of stimulated emission from conventional homogeneously pumped quantum well laser diodes.

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode.

PubMed

Hamada, Hiroki

2017-07-28

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1-11] and [11-1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

PubMed Central

Hamada, Hiroki

2017-01-01

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects. PMID:28773227

Modeling of structure and properties of thermo-optical converters for laser surgery

NASA Astrophysics Data System (ADS)

Belikov, Andrey V.; Skrypnik, Alexei V.; Kurnyshev, Vadim Y.

2016-04-01

Volumetric fiber-optic thermal converter (VFOTC) formed on the end of the quartz fiber as a result of two-stage conversion of quartz and carbon by medical diode laser radiation with a wavelength of 980 nm is investigated both experimentally and theoretically. The geometrical dimensions of the converter are defined and the internal structure of the converter is studied by optical microscopy. The dependence of VFOTC temperature on exposure time of diode laser radiation with a wavelength of 980 nm and power of 1.0+/-0.1 W is obtained experimentally. The structural, optical and thermal model of VFOTC is proposed. Good correlation between the experimental and modeling results of laser heating of the converter is demonstrated.

kW-class diode laser bars

NASA Astrophysics Data System (ADS)

Strohmaier, S. G.; Erbert, G.; Meissner-Schenk, A. H.; Lommel, M.; Schmidt, B.; Kaul, T.; Karow, M.; Crump, P.

2017-02-01

Progress will be presented on ongoing research into the development of ultra-high power and efficiency bars achieving significantly higher output power, conversion efficiency and brightness than currently commercially available. We combine advanced InAlGaAs/GaAs-based epitaxial structures and novel lateral designs, new materials and superior cooling architectures to enable improved performance. Specifically, we present progress in kilowatt-class 10-mm diode laser bars, where recent studies have demonstrated 880 W continuous wave output power from a 10 mm x 4 mm laser diode bar at 850 A of electrical current and 15°C water temperature. This laser achieves < 60% electro-optical efficiency at 880 W CW output power.

New PbSnTe heterojunction laser diode structures with improved performance

NASA Technical Reports Server (NTRS)

Fonstad, C. G.; Kasemset, D.; Hsieh, H. H.; Rotter, S.

1980-01-01

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

Micropulsed diode laser therapy: evolution and clinical applications.

PubMed

Sivaprasad, Sobha; Elagouz, Mohammed; McHugh, Dominic; Shona, Olajumoke; Dorin, Giorgio

2010-01-01

Many clinical trials have demonstrated the clinical efficacy of laser photocoagulation in the treatment of retinal vascular diseases, including diabetic retinopathy. There is, however, collateral iatrogenic retinal damage and functional loss after conventional laser treatment. Such side effects may occur even when the treatment is appropriately performed because of morphological damage caused by the visible endpoint, typically a whitening burn. The development of the diode laser with micropulsed emission has allowed subthreshold therapy without a visible burn endpoint. This greatly reduces the risk of structural and functional retinal damage, while retaining the therapeutic efficacy of conventional laser treatment. Studies using subthreshold micropulse laser protocols have reported successful outcomes for diabetic macular edema, central serous chorioretinopathy, macular edema secondary to retinal vein occlusion, and primary open angle glaucoma. The report includes the rationale and basic principles underlying micropulse diode laser therapy, together with a review of its current clinical applications. Copyright © 2010 Elsevier Inc. All rights reserved.

Shock isolator for operating a diode laser on a closed-cycle refrigerator

NASA Technical Reports Server (NTRS)

Jennings, D. E. (Inventor)

1979-01-01

A diode laser mounted within a helium refrigerator is mounted using a braided copper ground strap which provides good impact shock isolation from the refrigerator cold-tip while also providing a good thermal link to the cold-tip. The diode mount also contains a rigid stand-off assembly consisting of alternate sections of nylon and copper which serve as cold stations to improve thermal isolation from the vaccum housing mounting structure. Included in the mount is a Pb-In alloy wafer inserted between the cold-tip and the diode to damp temperature fluctuations occurring at the cold-tip.

Method and system for communicating with a laser power driver

DOEpatents

Telford, Steven

2017-07-18

A system for controlling a plurality of laser diodes includes an optical transmitter coupled to the laser diode driver for each laser diode. An optical signal including bi-phase encoded data is provided to each laser diode driver. The optical signal includes current level and pulse duration information at which each of the diodes is to be driven. Upon receiving a trigger signal, the laser diode drivers operate the laser diodes using the current level and pulse duration information to output a laser beam.

Qualification and Selection of Flight Diode Lasers for Space Applications

NASA Technical Reports Server (NTRS)

Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

2010-01-01

The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode traceablity.

A portable lidar using a diode-pumped YAG laser

NASA Technical Reports Server (NTRS)

Takeuchi, N.; Okumura, H.; Sugita, T.; Matsumoto, H.; Yamaguchi, S.

1992-01-01

A Mie lidar system is technically established and is used for monitoring air pollution, stratospheric and boundary layer aerosol distribution, plume dispersion, visibility, and the study of atmospheric structure and cloud physics. However, a lidar system is not widely used because of its cumbersome handling and unwieldy portability. Although the author developed a laser diode lidar system based on RM-CW technique, it has a limit of measurement distance. Here we report the development of an all solid Mie lidar system using a diode-pumped Nd:YAG laser and a Si-APD detector. This was constructed as a prototype of a handy lidar system.

Arrangement for damping the resonance in a laser diode

NASA Technical Reports Server (NTRS)

Katz, J.; Yariv, A.; Margalit, S. (Inventor)

1985-01-01

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector.

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

NASA Astrophysics Data System (ADS)

Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

2018-04-01

In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

Pump polarization insensitive and efficient laser-diode pumped Yb:KYW ultrafast oscillator.

PubMed

Wang, Sha; Wang, Yan-Biao; Feng, Guo-Ying; Zhou, Shou-Huan

2016-02-01

We theoretically and experimentally report and evaluate a novel split laser-diode (LD) double-end pumped Yb:KYW ultrafast oscillator aimed at improving the performance of an ultrafast laser. Compared to a conventional unpolarized single-LD end-pumped ultrafast laser system, we improve the laser performance such as absorption efficiency, slope efficiency, cw mode-locking threshold, and output power by this new structure LD-pumped Yb:KYW ultrafast laser. Experiments were carried out with a 1 W output fiber-coupled LD. Experimental results show that the absorption increases from 38.7% to 48.4%, laser slope efficiency increases from 18.3% to 24.2%, cw mode-locking threshold decreases 12.7% from 630 to 550 mW in cw mode-locking threshold, and maximum output-power increases 28.5% from 158.4 to 221.5 mW when we switch the pump scheme from an unpolarized single-end pumping structure to a split LD double-end pumping structure.

Contact diode laser application through a fiberoptic cutting tip.

PubMed

Peyman, G A; Cruz, S A; Ruiz-Lapuente, C

1991-01-01

We applied diode laser energy through a fiberoptic probe to cut ocular structures. The diameter of the probe's tip was 100 microns. The amount of energy used for cutting the lid, the cornea, or for perforation of the glove was 2.5 watts in the continuous mode. The incised border demonstrated coagulation into the healthy tissue ranging from 10 to 50 microns.

A new linear structured light module based on the MEMS micromirror

NASA Astrophysics Data System (ADS)

Zhou, Peng; Shen, Wenjiang; Yu, Huijun

2017-10-01

A new linear structured light module based on the Micro-Electro-Mechanical System (MEMS) two-dimensional scanning micromirror was designed and created. This module consists of a laser diode, a convex lens, and the MEMS micromirror. The laser diode generates the light and the convex lens control the laser beam to converge on a single point with large depth of focus. The fast scan in horizontal direction of the micromirror will turn the laser spot into a homogenous laser line. Meanwhile, the slow scan in vertical direction of the micromirror will move the laser line in the vertical direction. The width of the line generated by this module is 300μm and the length is 120mm and the moving distance is 100mm at 30cm away from the module. It will promote the development of industrial detection.

AlGaAs diode pumped tunable chromium lasers

DOEpatents

Krupke, William F.; Payne, Stephen A.

1992-01-01

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Visible light surface emitting semiconductor laser

DOEpatents

Olbright, Gregory R.; Jewell, Jack L.

1993-01-01

A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Room-temperature-operation visible-emission semiconductor diode lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.; Nuese, C. J.

1977-01-01

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Liquid phase epitaxial growth of GaInAsP/InP laser structures

NASA Astrophysics Data System (ADS)

Nohavica, D.; Têminová, J.; Berková, D.; Zagrádková, M.; Kortan, I.; Zelinka, I.; Walachová, I.; Malina, V.

1988-11-01

A modified single-phase liquid phase epitaxy method was developed on the basis of a novel variant of the growth boat. The method was used to grow GaInAsP/InP double heterostructures for lasers emitting at 1.3 and 1.55 μm. The main properties of wide-contact diodes (radiation power and threshold current density) were adopted as the characteristics of the quality of heterostructures characterized by different configurations of active and guiding layers. The quality of the structure was confirmed by the fabrication of laser diodes of the following types: stripe with oxide insulation, clad-ridge waveguide, and double-channel planar buried.

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Transient heat conduction in laser diodes

NASA Astrophysics Data System (ADS)

Enders, P.; Galley, J.

1988-11-01

The dynamics of heat transfer in stripe GaAlAs laser diodes is investigated by solving the linear diffusion equation for a quasitwo-dimensional multilayer structure. The calculations are rationalized drastically by the transfer matrix method and also using for the first time the asymptotes of the decay constants. Special attention is given to the convergence of the Fourier series. A comparison with experimental results reveals however that this is essentially the Stefan problem (with moving boundary conditions).

Model for Generation of Neutrons in a Compact Diode with Laser-Plasma Anode and Suppression of Electron Conduction Using a Permanent Cylindrical Magnet

NASA Astrophysics Data System (ADS)

Shikanov, A. E.; Vovchenko, E. D.; Kozlovskii, K. I.; Rashchikov, V. I.; Shatokhin, V. L.

2018-04-01

A model for acceleration of deuterons and generation of neutrons in a compact laser-plasma diode with electron isolation using magnetic field generated by a hollow cylindrical permanent magnet is presented. Experimental and computer-simulated neutron yields are compared for the diode structure under study. An accelerating neutron tube with a relatively high neutron generation efficiency can be constructed using suppression of electron conduction with the aid of a magnet placed in the vacuum volume.

Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

NASA Astrophysics Data System (ADS)

Castellano, A.; Cerutti, L.; Rodriguez, J. B.; Narcy, G.; Garreau, A.; Lelarge, F.; Tournié, E.

2017-06-01

We report on electrically pumped GaSb-based laser diodes monolithically grown on Si and operating in a continuous wave (cw) in the telecom wavelength range. The laser structures were grown by molecular-beam epitaxy on 6°-off (001) substrates. The devices were processed in coplanar contact geometry. 100 μm × 1 mm laser diodes exhibited a threshold current density of 1 kA/cm-2 measured under pulsed operation at 20 °C. CW operation was achieved up to 35 °C with 10 μm × 1 mm diodes. The output power at 20 °C was around 3 mW/uncoated facet, and the cw emission wavelength 1.59 μm, in the C/L-band of telecom systems.

The Beam Characteristics of High Power Diode Laser Stack

NASA Astrophysics Data System (ADS)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz

2012-03-01

TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.

Multi-photon microscopy with a low-cost and highly efficient Cr:LiCAF laser

PubMed Central

Sakadić, Sava; Demirbas, Umit; Mempel, Thorsten R.; Moore, Anna; Ruvinskaya, Svetlana; Boas, David A.; Sennaroglu, Alphan; Kartner, Franz X.; Fujimoto, James G.

2009-01-01

Multi-photon microscopy (MPM) is a powerful tool for biomedical imaging, enabling molecular contrast and integrated structural and functional imaging on the cellular and subcellular level. However, the cost and complexity of femtosecond laser sources that are required in MPM are significant hurdles to widespread adoption of this important imaging modality. In this work, we describe femtosecond diode pumped Cr:LiCAF laser technology as a low cost alternative to femtosecond Ti:Sapphire lasers for MPM. Using single mode pump diodes which cost only $150 each, a diode pumped Cr:LiCAF laser generates ~70-fs duration, 1.8-nJ pulses at ~800 nm wavelengths, with a repetition rate of 100 MHz and average output power of 180 mW. Representative examples of MPM imaging in neuroscience, immunology, endocrinology and cancer research using Cr:LiCAF laser technology are presented. These studies demonstrate the potential of this laser source for use in a broad range of MPM applications. PMID:19065223

Highly reliable contacts for lead-salt diode lasers

NASA Astrophysics Data System (ADS)

Lo, W.

1981-02-01

In order to improve the long term reliability of lead-salt diode lasers, ohmic contacts of multilayer, thin-film structures consisting of In plus Au, Pt, Ni, and Pd have been studied. Diode lasers of PbSnTe fabricated with a variety of contacts were tested during room-temperature storage and during accelerated aging tests. The results show that contact reliability can be improved when multiple overlapping films are used. After 4500 h of baking at 60 C, lasers with In-Au-Pd-Au contacts on both sides showed the least resistance increase (10%). For lasers with In-Au-Pt-Au contacts, 1 h of baking at 60 C is equivalent to 2 d storage at room temperature. Extrapolating these results, a 70% increase in contact resistance is expected for this type of laser after 9000 d of storage at room temperature. The data also suggests that a smaller increase in contact resistance can be expected for lasers fabricated with In-Au-Ni and In-Au-Pd-Au contacts.

Arbitrary waveform generator to improve laser diode driver performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Kao, Yu-Jui; Yang, Ya-Yu; Sheu, Jinn-Kong

2012-02-27

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

PubMed

Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

2017-07-01

We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

Modeling of a diode-pumped thin-disk cesium vapor laser

NASA Astrophysics Data System (ADS)

An, Guofei; Cai, He; Liu, Xiaoxu; Han, Juhong; Zhang, Wei; Wang, Hongyuan; Wang, You

2018-03-01

A diode pumped alkali laser (DPAL) provides a significant potential for construction of high-powered lasers. Until now, a series of models have been established to analyze the kinetic process and most of them are based on the end-pumped alkali laser system in which the vapor cell are usually cylindrical and cuboid. In this paper, a mathematic model is constructed to investigate the kinetic processes of a diode pumped thin-disk cesium vapor laser, in which the cesium vapor and the buffer gases are beforehand filled in a sealed glass cell with a thin-disk structure. We systemically study the influences of the cell temperature and cell thickness on the output features of a thin-disk DPAL. Further, we study the thin-disk DPAL with the W-shaped resonator and multiple-disk configuration. To the best of our knowledge, there have not been any similar reports so far.

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

High-Reliability Pump Module for Non-Planar Ring Oscillator Laser

NASA Technical Reports Server (NTRS)

Liu, Duncan T.; Qiu, Yueming; Wilson, Daniel W.; Dubovitsky, Serge; Forouhar, Siamak

2007-01-01

We propose and have demonstrated a prototype high-reliability pump module for pumping a Non-Planar Ring Oscillator (NPRO) laser suitable for space missions. The pump module consists of multiple fiber-coupled single-mode laser diodes and a fiber array micro-lens array based fiber combiner. The reported Single-Mode laser diode combiner laser pump module (LPM) provides a higher normalized brightness at the combined beam than multimode laser diode based LPMs. A higher brightness from the pump source is essential for efficient NPRO laser pumping and leads to higher reliability because higher efficiency requires a lower operating power for the laser diodes, which in turn increases the reliability and lifetime of the laser diodes. Single-mode laser diodes with Fiber Bragg Grating (FBG) stabilized wavelength permit the pump module to be operated without a thermal electric cooler (TEC) and this further improves the overall reliability of the pump module. The single-mode laser diode LPM is scalable in terms of the number of pump diodes and is capable of combining hundreds of fiber-coupled laser diodes. In the proof-of-concept demonstration, an e-beam written diffractive micro lens array, a custom fiber array, commercial 808nm single mode laser diodes, and a custom NPRO laser head are used. The reliability of the proposed LPM is discussed.

885-nm Pumped Ceramic Nd:YAG Master Oscillator Power Amplifier Laser System

NASA Technical Reports Server (NTRS)

Yu, Anthony

2012-01-01

The performance of a traditional diode pumped solid-state laser that is typically pumped with 808-nm laser diode array (LDA) and crystalline Nd:YAG was improved by using 885-nm LDAs and ceramic Nd:YAG. The advantage is lower quantum defect, which will improve the thermal loading on laser gain medium, resulting in a higher-performance laser. The use of ceramic Nd:YAG allows a higher Nd dopant level that will make up the lower absorption at the 885-nm wavelength on Nd:YAG. When compared to traditional 808-nm pump, 885-nm diodes will have 30% less thermal load (or wasted heat) and will thus see a similar percentage improvement in the overall laser efficiency. In order to provide a more efficient laser system for future flight missions that require the use of low-repetition- rate (1% Nd. To make certain that the absorption at 885 nm is on the same par as the 808-nm diode, the Nd:YAG material needs to be doped with higher concentration of Nd. Ceramic Nd:YAG is the only material that can be tailored to specific needs.

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR)more » range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.« less

Laser-induced nonlinear crystalline waveguide on glass fiber format and diode-pumped second harmonic generation

NASA Astrophysics Data System (ADS)

Shi, Jindan; Feng, Xian

2018-03-01

We report a diode pumped self-frequency-doubled nonlinear crystalline waveguide on glass fiber. A ribbon fiber has been drawn on the glass composition of 50GeO2-25B2O3-25(La,Yb)2O3. Surface channel waveguides have been written on the surface of the ribbon fiber, using space-selective laser heating method with the assistance of a 244 nm CW UV laser. The Raman spectrum of the written area indicates that the waveguide is composed of structure-deformed nonlinear (La,Yb)BGeO5 crystal. The laser-induced surface wavy cracks have also been observed and the forming mechanism of the wavy cracks has been discussed. Efficient second harmonic generation has been observed from the laser-induced crystalline waveguide, using a 976 nm diode pump. 13 μW of 488 nm output has been observed from a 17 mm long waveguide with 26.0 mW of launched diode pump power, corresponding to a normalized conversion efficiency of 4.4%W-1.

Speckle reduction in laser projection displays through angle and wavelength diversity.

PubMed

Tran, Trinh-Thi-Kim; Svensen, Øyvind; Chen, Xuyuan; Akram, Muhammad Nadeem

2016-02-20

Speckle is the main obstacle for the use of laser light sources in projection technology. This paper focuses on speckle suppression by the reduction of temporal coherence which is provided by the broadband laser light. The investigation of the effect of laser spectrum width and multiple lasers on speckle contrast is discussed. A broader spectrum width of the laser light is attained by the use of multiple semiconductor laser diodes of the broad area type. Measurements of speckle contrast with and without angle diversity are performed for two and four laser diodes. The measurement of speckle contrast for a single laser diode is also presented for comparison. The experimental results show that multiple laser diodes provide lower speckle contrast as compared to a single laser diode. In addition, it is also shown in this paper that the wavelength distribution of independent laser diodes has an effect on speckle contrast. Two different types of blue laser diodes, Nichia NUB802T and Nichia NUB801E, which have slightly different central wavelengths, were used for the measurements. Four laser diodes with a combination of two types of laser diodes offer better speckle contrast reduction than four laser diodes of the same type due to an effective broader spectrum. Additional speckle contrast reduction is achieved through the angle diversity by using a dynamic deformable mirror.

Simulations of Large-Area Electron Beam Diodes

NASA Astrophysics Data System (ADS)

Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.

1999-11-01

Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.

Diode lasers optimized in brightness for fiber laser pumping

NASA Astrophysics Data System (ADS)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Novel 755-nm diode laser vs. conventional 755-nm scanned alexandrite laser: Side-by-side comparison pilot study for thorax and axillary hair removal.

PubMed

Paasch, Uwe; Wagner, Justinus A; Paasch, Hartmut W

2015-01-01

Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) and non-conventional in-motion (SHR) modes with a conventional scanned alexandrite 755 nm laser for chest and axillary hair removal. A prospective, single-center, proof of principle study was designed to evaluate the safety, efficacy and handling of a 755 nm diode laser system in comparison to a standard alexandrite 755 nm scanning hair removal laser. The new 755 nm diode is suitable to be used in SHR and HR mode and has been tested for its safety, efficacy and handling in a volunteer with success. Overall, both systems showed a high efficacy in hair reduction (88.8% 755 nm diode laser vs. 77.7% 755 nm alexandrite laser). Also, during the study period, no severe adverse effects were reported. The new 755 nm diode laser is as effective and safe as the traditional 755 nm alexandrite laser. Additionally, treatment with the 755 nm diode laser with HR and SHR modes was found to be less painful.

Frequency stabilization of diode-laser-pumped solid state lasers

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1988-01-01

The goal of the NASA Sunlite program is to fly two diode-laser-pumped solid-state lasers on the space shuttle and while doing so to perform a measurement of their frequency stability and temporal coherence. These measurements will be made by combining the outputs of the two lasers on an optical radiation detector and spectrally analyzing the beat note. Diode-laser-pumped solid-state lasers have several characteristics that will make them useful in space borne experiments. First, this laser has high electrical efficiency. Second, it is of a technology that enables scaling to higher powers in the future. Third, the laser can be made extremely reliable, which is crucial for many space based applications. Fourth, they are frequency and amplitude stable and have high temporal coherence. Diode-laser-pumped solid-state lasers are inherently efficient. Recent results have shown 59 percent slope efficiency for a diode-laser-pumped solid-state laser. As for reliability, the laser proposed should be capable of continuous operation. This is possible because the diode lasers can be remote from the solid state gain medium by coupling through optical fibers. Diode lasers are constructed with optical detectors for monitoring their output power built into their mounting case. A computer can actively monitor the output of each diode laser. If it sees any variation in the output power that might indicate a problem, the computer can turn off that diode laser and turn on a backup diode laser. As for stability requirements, it is now generally believed that any laser can be stabilized if the laser has a frequency actuator capable of tuning the laser frequency as far as it is likely to drift in a measurement time.

Curved adjustable fibre-optic diode laser in microscopic cholesteatoma surgery: description of use and review of the relevant literature.

PubMed

McCaffer, C J; Pabla, L; Watson, C

2018-04-01

The use of lasers in cholesteatoma surgery is common and well accepted. The most commonly used laser fibres are straight and non-adjustable; these have several limitations. This paper describes the use of an alternative laser fibre. This 'How I Do It' paper describes and illustrates the use of an alternative curved adjustable fibre-optic diode laser in microscopic cholesteatoma surgery. The curved, adjustable laser fibre allows accurate and atraumatic disease removal when the use of a straight laser fibre may be less effective or accurate. It reduces potential damage to delicate structures without the need for extra drilling or bone removal. It is suggested that the curved adjustable laser fibre is superior to the traditional straight fibre for cholesteatoma surgery.

A simple photoionization scheme for characterizing electron and ion spectrometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wituschek, A.; Vangerow, J. von; Grzesiak, J.

We present a simple diode laser-based photoionization scheme for generating electrons and ions with well-defined spatial and energetic (≲2 eV) structures. This scheme can easily be implemented in ion or electron imaging spectrometers for the purpose of off-line characterization and calibration. The low laser power ∼1 mW needed from a passively stabilized diode laser and the low flux of potassium atoms in an effusive beam make our scheme a versatile source of ions and electrons for applications in research and education.

Laser Diode Ignition (LDI)

NASA Technical Reports Server (NTRS)

Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

1994-01-01

This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

High-power direct-diode laser successes

NASA Astrophysics Data System (ADS)

Haake, John M.; Zediker, Mark S.

2004-06-01

Direct diode laser will become much more prevalent in the solar system of manufacturing due to their high efficiency, small portable size, unique beam profiles, and low ownership costs. There has been many novel applications described for high power direct diode laser [HPDDL] systems but few have been implemented in extreme production environments due to diode and diode system reliability. We discuss several novel applications in which the HPDDL have been implemented and proven reliable and cost-effective in production environments. These applications are laser hardening/surface modification, laser wire feed welding and laser paint stripping. Each of these applications uniquely tests the direct diode laser systems capabilities and confirms their reliability in production environments. A comparison of the advantages direct diode laser versus traditional industrial lasers such as CO2 and Nd:YAG and non-laser technologies such a RF induction, and MIG welders for each of these production applications is presented.

Diode Laser Velocity Measurements by Modulated Filtered Rayleigh Scattering

NASA Technical Reports Server (NTRS)

Mach, J. J.; Varghese, P. L.; Jagodzinski, J. J.

1999-01-01

The ability of solid-state lasers to be tuned in operating frequency at MHz rates by input current modulation, while maintaining a relatively narrow line-width, has made them useful for spectroscopic measurements. Their other advantages include low cost, reliability, durability, compact size, and modest power requirements, making them a good choice for a laser source in micro-gravity experiments in drop-towers and in flight. For their size, they are also very bright. In a filtered Rayleigh scattering (FRS) experiment, a diode laser can be used to scan across an atomic or molecular absorption line, generating large changes in transmission at the resonances for very small changes in frequency. The hyperfine structure components of atomic lines of alkali metal vapors are closely spaced and very strong, which makes such atomic filters excellent candidates for sensitive Doppler shift detection and therefore for high-resolution velocimetry. In the work we describe here we use a Rubidium vapor filter, and work with the strong D(sub 2) transitions at 780 nm that are conveniently accessed by near infrared diode lasers. The low power output of infrared laser diodes is their primary drawback relative to other laser systems commonly used for velocimetry. However, the capability to modulate the laser frequency rapidly and continuously helps mitigate this. Using modulation spectroscopy and a heterodyne detection scheme with a lock-in amplifier, one can extract sub-microvolt signals occurring at a specific frequency from a background that is orders of magnitude stronger. The diode laser modulation is simply achieved by adding a small current modulation to the laser bias current. It may also be swept repetitively in wavelength using an additional lower frequency current ramp.

The synergistic effect on osteogenic differentiation of human mesenchymal stem cells by diode laser-treated stimulating human umbilical vein endothelial cells

NASA Astrophysics Data System (ADS)

Kao, Chia-Tze; Hsu, Tuan-Ti; Huang, Tsui-Hsien; Wu, Yu-Tin; Chen, Yi-Wen; Shie, Ming-You

2016-02-01

Angiogenesis plays an important role in determining the biostimulation of bone regeneration, in either new bone or blood vessel formation. Human umbilical cord cells (HUVECs) are important effector cells in angiogenesis and are indispensable for osteogenesis and for their heterogeneity and plasticity. However, there are very few studies about the effects of HUVECs on diode laser-stimulated/regulated osteogenesis. In this study, we used diode laser as a model biostimulation to examine the role of HUVECs on laser-stimulated osteogenesis. Several bone formation-related proteins were also significantly up-regulated by the diode laser stimulation, indicating that HUVECs may participate in diode laser-stimulated osteogenesis. Interestingly, when human mesenchymal stem cells (hMSCs) cultured with HUVECs were diode laser-treated, the osteogenesis differentiation of the hMSCs was significantly promoted, indicating the important role of HUVECs in diode laser-enhanced osteogenesis. Adequately activated HUVECs are vital for the success of diode laser-stimulated hard-tissue regeneration. These findings provided valuable insights into the mechanism of diode laser-stimulated osteogenic differentiation, and a strategy to optimize the evaluation system for the in vitro osteogenesis capacity of laser treatment in periodontal repair.

Digital control of diode laser for atmospheric spectroscopy

NASA Technical Reports Server (NTRS)

Menzies, R. T.; Rutledge, C. W. (Inventor)

1985-01-01

A system is described for remote absorption spectroscopy of trace species using a diode laser tunable over a useful spectral region of 50 to 200 cm(-1) by control of diode laser temperature over range from 15 K to 100 K, and tunable over a smaller region of typically 0.1 to 10 cm(-1) by control of the diode laser current over a range from 0 to 2 amps. Diode laser temperature and current set points are transmitted to the instrument in digital form and stored in memory for retrieval under control of a microprocessor during measurements. The laser diode current is determined by a digital to analog converter through a field effect transistor for a high degree of ambient temperature stability, while the laser diode temperature is determined by set points entered into a digital to analog converter under control of the microprocessor. Temperature of the laser diode is sensed by a sensor diode to provide negative feedback to the temperature control circuit that responds to the temperature control digital to analog converter.

Teradiode's high brightness semiconductor lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Diode laser soldering using a lead-free filler material for electronic packaging structures

NASA Astrophysics Data System (ADS)

Chaminade, C.; Fogarassy, E.; Boisselier, D.

2006-04-01

As of today, several lead-free soldering pastes have been qualified for currently used soldering process. Regarding the new potential of laser-assisted soldering processes, the behaviour of the SnAgCu soldering paste requires, however, new investigations. In the first part of this study, the specific temperature profile of a laser soldering process is investigated using a high power diode laser (HPDL). These experimental results are compared to a thermal simulation developed for this specific application. The second part of this work deals with the diffusion of the tin-based filler material through the nickel barrier using the information extracted from the temperature simulations.

Polarization effects associated with thermal processing of HY-80 structural steel using high-power laser diode array

NASA Astrophysics Data System (ADS)

Wu, Sheldon S. Q.; Baker, Bradford W.; Rotter, Mark D.; Rubenchik, Alexander M.; Wiechec, Maxwell E.; Brown, Zachary M.; Beach, Raymond J.; Matthews, Manyalibo J.

2017-12-01

Localized heating of roughened steel surfaces using highly divergent laser light emitted from high-power laser diode arrays was experimentally demonstrated and compared with theoretical predictions. Polarization dependence was analyzed using Fresnel coefficients to understand the laser-induced temperature rise of HY-80 steel plates under 383- to 612-W laser irradiation. Laser-induced, transient temperature distributions were directly measured using bulk thermocouple probes and thermal imaging. Finite-element analysis yielded quantitative assessment of energy deposition and heat transport in HY-80 steel using absorptivity as a tuning parameter. The extracted absorptivity values ranged from 0.62 to 0.75 for S-polarized and 0.63 to 0.85 for P-polarized light, in agreement with partially oxidized iron surfaces. Microstructural analysis using electron backscatter diffraction revealed a heat affected zone for the highest temperature conditions (612 W, P-polarized) as evidence of rapid quenching and an austenite to martensite transformation. The efficient use of diode arrays for laser-assisted advanced manufacturing technologies, such as hybrid friction stir welding, is discussed.

Optical coupling of bare optoelectronic components and flexographically printed polymer waveguides in planar optronic systems

NASA Astrophysics Data System (ADS)

Wang, Yixiao; Wolfer, Tim; Lange, Alex; Overmeyer, Ludger

2016-05-01

Large scale, planar optronic systems allowing spatially distributed functionalities can be well used in diverse sensor networks, such as for monitoring the environment by measuring various physical quantities in medicine or aeronautics. In these systems, mechanically flexible and optically transparent polymeric foils, e.g. polymethyl methacrylate (PMMA) and polyethylene terephthalate (PET), are employed as carrier materials. A benefit of using these materials is their low cost. The optical interconnections from light sources to light transmission structures in planar optronic systems occupy a pivotal position for the sensing functions. As light sources, we employ the optoelectronic components, such as edgeemitting laser diodes, in form of bare chips, since their extremely small structures facilitate a high integration compactness and ensure sufficient system flexibility. Flexographically printed polymer optical waveguides are deployed as light guiding structures for short-distance communication in planar optronic systems. Printing processes are utilized for this generation of waveguides to achieve a cost-efficient large scale and high-throughput production. In order to attain a high-functional optronic system for sensing applications, one of the most essential prerequisites is the high coupling efficiency between the light sources and the waveguides. Therefore, in this work, we focus on the multimode polymer waveguide with a parabolic cross-section and investigate its optical coupling with the bare laser diode. We establish the geometrical model of the alignment based on the previous works on the optodic bonding of bare laser diodes and the fabrication process of polymer waveguides with consideration of various parameters, such as the beam profile of the laser diode, the employed polymer properties of the waveguides as well as the carrier substrates etc. Accordingly, the optical coupling of the bare laser diodes and the polymer waveguides was simulated. Additionally, we demonstrate optical links by adopting the aforementioned processes used for defining the simulation. We verify the feasibility of the developed processes for planar optronic systems by using an active alignment and conduct discussions for further improvements of optical alignment.

Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J. R.

1989-01-01

Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

Monolithic microchannel heatsink

DOEpatents

Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

1996-08-20

A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

Monolithic microchannel heatsink

DOEpatents

Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

1996-01-01

A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

Coherent blue emission generated by Rb two-photon excitation using diode and femtosecond lasers

NASA Astrophysics Data System (ADS)

Lopez, Jesus P.; Moreno, Marco P.; de Miranda, Marcio H. G.; Vianna, Sandra S.

2017-04-01

The coherent blue light generated in rubidium vapor due to the combined action of an ultrashort pulse train and a continuous wave diode laser is investigated. Each step of the two-photon transition 5S-5P{}3/2-5D is excited by one of the lasers, and the induced coherence between the 5S and 6P{}3/2 states is responsible for generating the blue beam. Measurements of the excitation spectrum reveal the frequency comb structure and allow us to identify the resonant modes responsible for inducing the nonlinear process. Further, each resonant mode excites a different group of atoms, making the process selective in atomic velocity. The signal dependency on the atomic density is characterized by a sharp growth and a rapid saturation. We also show that for high intensity of the diode laser, the Stark shift at resonance causes the signal suppression observed at low atomic density.

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch

2014-04-07

We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of themore » top p-GaN layer and the active region, respectively.« less

Pump Diode Characterization for an Unstable Diode-Pumped Alkali Laser Resonator

DTIC Science & Technology

2013-03-01

2003. Petersen, A., and R. Lane, Second harmonic operation of diode-pumped Rb vapor lasers , Proc. of SPIE, 7005, 2008. Siegman , A. E., Lasers ...University Science Books, Sausalito, CA, 1986. Siegman , A. E., Defining, measuring and optimizing laser beam quality, Proc. of SPIE, 1868, 1993. Steck, D...PUMP DIODE CHARACTERIZATION FOR AN UNSTABLE DIODE-PUMPED ALKALI LASER RESONATOR THESIS Chad T. Taguba, Master Sergeant, USAF AFIT-ENP-13-M-33

Rectified diode response of a multimode quantum cascade laser integrated terahertz transceiver.

PubMed

Dyer, Gregory C; Norquist, Christopher D; Cich, Michael J; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

2013-02-25

We characterized the DC transport response of a diode embedded in a THz quantum cascade laser as the laser current was changed. The overall response is described by parallel contributions from the rectification of the laser field due to the non-linearity of the diode I-V and from thermally activated transport. Sudden jumps in the diode response when the laser changes from single mode to multi-mode operation, with no corresponding jumps in output power, suggest that the coupling between the diode and laser field depends on the spatial distribution of internal fields. The results demonstrate conclusively that the internal laser field couples directly to the integrated diode.

Visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals.

PubMed

Wang, Baoju; Zhan, Qiuqiang; Zhao, Yuxiang; Wu, Ruitao; Liu, Jing; He, Sailing

2016-01-25

Further development of multiphoton microscopic imaging is confronted with a number of limitations, including high-cost, high complexity and relatively low spatial resolution due to the long excitation wavelength. To overcome these problems, for the first time, we propose visible-to-visible four-photon ultrahigh resolution microscopic imaging by using a common cost-effective 730-nm laser diode to excite the prepared Nd(3+)-sensitized upconversion nanoparticles (Nd(3+)-UCNPs). An ordinary multiphoton scanning microscope system was built using a visible CW diode laser and the lateral imaging resolution as high as 161-nm was achieved via the four-photon upconversion process. The demonstrated large saturation excitation power for Nd(3+)-UCNPs would be more practical and facilitate the four-photon imaging in the application. A sample with fine structure was imaged to demonstrate the advantages of visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals. Combining the uniqueness of UCNPs, the proposed visible-to-visible four-photon imaging would be highly promising and attractive in the field of multiphoton imaging.

High-Power Broad-Area Diode Lasers and Laser Bars

NASA Astrophysics Data System (ADS)

Erbert, Goetz; Baerwolff, Arthur; Sebastian, Juergen; Tomm, Jens

This review presents the basic ideas and some examples of the chip technology of high-power diode lasers ( λ= 650,-1060,) in connection with the achievements of mounted single-stripe emitters in recent years.In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

S100a8/NF-κB signal pathway is involved in the 800-nm diode laser-induced skin collagen remodeling.

PubMed

Ren, Xiaolin; Ge, Minggai; Qin, Xiaofeng; Xu, Peng; Zhu, Pingya; Dang, Yongyan; Gu, Jun; Ye, Xiyun

2016-05-01

The 800-nm diode laser is widely used for hair removal and also promotes collagen synthesis, but the molecular mechanism by which dermis responses to the thermal damage induced by the 800-nm diode laser is still unclear. Ten 2-month-old mice were irradiated with the 800-nm diode laser at 20, 40, and 60 J/cm(2), respectively. Skin samples were taken for PCR, Western blot analysis, and histological study at day 3 or 30 after laser irradiation. The expression of S100a8 and its two receptors (advanced glycosylation end product-specific receptor, RAGE and toll-like receptor 4, TRL4) was upregulated at day 3 after laser treatments. P-p65 levels were also elevated, causing the increase of cytokine (tumor necrosis factor, TNF-α and interleukin 6, IL-6) and MMPs (MMP1a, MMP9). At day 30, PCR and Western blot analysis showed significant increase of type I and III procollagen in the dermis treated with laser. Importantly, skin structure was markedly improved in the laser-irradiated skin compared with the control. Thus, it seemed that S100a8 upregulation triggered NF-κB signal pathway through RAGE and TLR4, responding to laser-induced dermis wound healing. The involvement of the NF-κB pathway in MMP gene transcription promoted the turnover of collagen in the skin, accelerating new collagen synthesis.

Diode Laser for Laryngeal Surgery: a Systematic Review.

PubMed

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-04-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

Diode Laser for Laryngeal Surgery: a Systematic Review

PubMed Central

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-01-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. Conclusion: The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects. PMID:27096024

Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.

1980-01-01

Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.

Construction of a Visible Diode Laser Source for Free Radical Photochemistry and Spectroscopy Experiments

NASA Technical Reports Server (NTRS)

Newman, Bronjelyn; Halpern, Joshua B.

1997-01-01

Tunable diode lasers are reliable sources of narrow-band light and comparatively cheap. Optical feedback simplifies frequency tuning of the laser diodes. We are building an inexpensive diode laser system incorporating optical feedback from a diffraction grating. The external optical cavity can be used with lasers that emit between 2 and 100 mW, and will also work if they are pulsed, although this will significantly degrade the bandwidth. The diode laser output power and bandwidth are comparable to CW dye lasers used in kinetics and dynamics experiments. However, their cost and maintenance will be much less as will alignment time. We intend to use the diode lasers to investigate CN and C2 kinetics as well as to study dissociation dynamics of atmospherically important molecules.

GaSbBi/GaSb quantum well laser diodes

NASA Astrophysics Data System (ADS)

Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

2017-05-01

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

Microscopic analysis of structural changes in diode-laser-welded corneal stroma

NASA Astrophysics Data System (ADS)

Matteini, Paolo; Rossi, Francesca; Menabuoni, Luca; Pini, Roberto

2007-02-01

Diode laser welding of the cornea is a technique used to provide immediate sealing of corneal wounds: the cut is stained with a water solution of Indocyanine Green and is then irradiated with an 810 nm laser at low power densities (12-16 W/cm2), which induces a localized heating of the stroma in the range 55-66 °C range. In this study, we present a microscopic analysis aimed at evaluating the structural modifications induced in the stromal collagen of pig eyes during the laser welding of corneal wounds. Cornea samples obtained from twenty freshly-enucleated eyes were cut with a pre-calibrated knife and subjected to the laser welding procedure. Histological slices of the laser-welded stroma were examined by means of optical and transmission electron microscopy. These analyses indicated that bridges of lamellar structures crossed the wound edges with no presence of a coagulation effect. After laser welding, collagen fibrils appeared differently oriented among themselves in comparison with those of the control samples, but with similar mean fibril diameters. The laser-induced effect appeared to be confined to the ICG stained area of the cut walls, and no heat damage was observed at the operative power levels of laser corneal welding.

Laser-diode-pumped 1319-nm monolithic non-planar ring single-frequency laser

NASA Astrophysics Data System (ADS)

Wang, Qing; Gao, Chunqing; Zhao, Yan; Yang, Suhui; Wei, Guanghui; 2, Dongmei Hong

2003-10-01

Single-frequency 1319-nm laser was obtained by using a laser-diode-pumped monolithic Nd:YAG crystal with a non-planar ring oscillator (NPRO). When the NPRO laser was pumped by an 800-?m fiber coupled laser diode, the output power of the single-frequency 1319-nm laser was 220 mW, and the slope efficiency was 16%. With a 100-1m fiber coupled diode laser pumped, 99-mW single-frequency 1319-nm laser was obtained with a slope efficiency of 29%.

New Submount Requirement of Conductively Cooled Laser Diodes for Lidar Applications

NASA Technical Reports Server (NTRS)

Mo, S. Y.; Cutler, A. D.; Choi, S. H.; Lee, M. H.; Singh, U. N.

2000-01-01

New submount technology is essential for the development of conductively cooled high power diode laser. The simulation and experimental results indicate that thermal conductivity of submount for high power laser-diode must be at least 600 W/m/k or higher for stable operation. We have simulated several theoretical thermal model based on new submount designs and characterized high power diode lasers to determine temperature effects on the performances of laser diodes. The characterization system measures the beam power, output beam profile, temperature distribution, and spectroscopic property of high power diode laser. The characterization system is composed of four main parts: an infrared imaging camera, a CCD camera, a monochromator, and a power meter. Thermal characteristics of two commercial-grade CW 20-W diode laser bars with open heat-sink type were determined with respect to the line shift of emission spectra and beam power stability. The center wavelength of laser emission has a tendency to shift toward longer wavelength as the driving current and heat sink temperature are increased. The increase of heat sink temperature decreases the output power of the laser bar too. Such results lay the guidelines for the design of new submount for high power laser-diodes.

Diode lasers: From laboratory to industry

NASA Astrophysics Data System (ADS)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Resonantly diode-pumped eye-safe Er:YAG laser with fiber-shaped crystal

NASA Astrophysics Data System (ADS)

Němec, Michal; Šulc, Jan; Hlinomaz, Kryštof; Jelínková, Helena; Nejezchleb, Karel; Čech, Miroslav

2018-02-01

Solid-state eye-safe lasers are interesting sources for various applications, such as lidar, remote sensing, and ranging. A resonantly diode-pumped Er:YAG laser could be one of them allowing to reach a tunable laser emission in 1.6 μm spectral region. To overcome low pump absorption and poor pumping beam quality generated by commercially available laser diode, an active medium could be formed to long and thin laser rod guiding pumping radiation. Such an effective cooling during a high power pumping, which is a "crystal-fiber" benefit, may be useful for "standard" crystal active medium. The main goal of this work was to investigate the laser characteristics of new developed Er:YAG crystal with a special shape for diode-pumping. Er:YAG fiber-shape crystal with square cross-section (1x1mm) and 40mm in length was doped by 0.1% Er3+ ions. All sides of this crystal were polished and in addition the end-faces of it were antireflection coatings for the wavelength 1470 and 1645 nm. As a pump system, a fiber coupled laser diode (f = 10 Hz, t = 10 ms) emitting radiation at 1465 nm wavelength was used. Er:YAG fiber-shape crystal was placed onto a copper holder in the 85 mm long plan-concave resonator consisting of a pump flat mirror and output curved (r = 150 mm) coupler with a reflectivity of 96 % @ 1645 nm. The dependence of the output peak power on absorbed pump power was investigated and the maximum 0.8 W was obtained. The corresponding slope efficiency was 14.5 %. The emitting wavelength was equaled to 1645 nm (4 nm linewidth, FWHM). The spatial beam structure was close to the Gaussian mode.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE PAGES

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt; ...

2017-05-18

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

Quasi-CW Laser Diode Bar Life Tests

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu. M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

Low threshold current density (<400 A/cm2) injection lasing in (AlxGa1-x)0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm) is obtained. The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at preventing escape of the injected nonequilibrium electrons from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15o for (611)A substrates. The lasing at 569 nm is realized at 85 K. In the orange-red laser diode structure low threshold current density (200 A/cm2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrate room temperature lasing at 628 nm at 2 kA/cm2 and a total power above 3W. The red laser diodes grown on (211)A substrates demonstrate vertically multimode lasing far field pattern indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However the temperature stability of the threshold current and the wavelength stability are significantly higher for (211)A-grown structures in agreement with the conduction band modeling data.

Suppression of the Transit -Time Instability in Large-Area Electron Beam Diodes

NASA Astrophysics Data System (ADS)

Myers, Matthew C.; Friedman, Moshe; Swanekamp, Stephen B.; Chan, Lop-Yung; Ludeking, Larry; Sethian, John D.

2002-12-01

Experiment, theory, and simulation have shown that large-area electron-beam diodes are susceptible to the transit-time instability. The instability modulates the electron beam spatially and temporally, producing a wide spread in electron energy and momentum distributions. The result is gross inefficiency in beam generation and propagation. Simulations indicate that a periodic, slotted cathode structure that is loaded with resistive elements may be used to eliminate the instability. Such a cathode has been fielded on one of the two opposing 60 cm × 200 cm diodes on the NIKE KrF laser at the Naval Research Laboratory. These diodes typically deliver 600 kV, 500 kA, 250 ns electron beams to the laser cell in an external magnetic field of 0.2 T. We conclude that the slotted cathode suppressed the transit-time instability such that the RF power was reduced by a factor of 9 and that electron transmission efficiency into the laser gas was improved by more than 50%.

Dental enamel irradiated with infrared diode laser and photoabsorbing cream: Part 1 -- FT-Raman Study.

PubMed

de Sant'anna, Giselle Rodrigues; dos Santos, Edson Aparecido Pereira; Soares, Luís Eduardo Silva; do Espírito Santo, Ana Maria; Martin, Airton Abrahão; Duarte, Danilo Antônio; Pacheco-Soares, Cristina; Brugnera, Aldo

2009-06-01

The aim of this FT-Raman study was to investigate laser-induced compositional changes in enamel after therapy with a low-level infrared diode laser and a photoabsorbing cream, in order to intensify the superficial light absorption before and after cariogenic challenge. Dental caries remains the most prevalent disease during childhood and adolescence. Preventive modalities include the use of fluoride, reduction of dietary cariogenic refined carbohydrates, plaque removal and oral hygiene techniques, and antimicrobial prescriptions. A relatively simple and noninvasive caries preventive regimen is treating tooth enamel with laser irradiation, either alone or in combination with topical fluoride treatment, resulting in reduced enamel solubility and dissolution rates. Due to their high cost, high-powered lasers are still not widely employed in private practice in developing countries. Thus, low-power red and near-infrared lasers appear to be an appealing alternative. Twenty-four extracted or exfoliated caries-free deciduous molars were divided into six groups: control group (no treatment; n = 8); infrared laser treatment (L; n = 8) (810 nm at 100 mW/cm(2) for 90 sec); infrared diode laser irradiation (810 nm at 100 mW/cm(2) for 90 sec) and photoabsorbing cream (IVL; n = 8); photoabsorbing cream alone (IV; n = 8); infrared diode laser irradiation (810 nm at 100 mW/cm(2) for 90 sec) and fluorinated photoabsorbing agent (IVLF; n = 8); and fluorinated photoabsorbing agent alone (IVF; n = 8). Samples were analyzed using FT-Raman spectroscopy before and after pH cycling cariogenic challenge. There was a significant laser-induced reduction and possible modification of the organic matrix content in enamel treated with the low-level diode laser (the L, IVL, and IVFL groups). The FT-Raman technique may be suitable for detecting compositional and structural changes occurring in mineral phases and organic phases of lased enamel under cariogenic challenge.

Dynamical regimes and intracavity propagation delay in external cavity semiconductor diode lasers

NASA Astrophysics Data System (ADS)

Jayaprasath, E.; Sivaprakasam, S.

2017-11-01

Intracavity propagation delay, a delay introduced by a semiconductor diode laser, is found to significantly influence synchronization of multiple semiconductor diode lasers, operated either in stable or in chaotic regime. Two diode lasers coupled in unidirectional scheme is considered in this numerical study. A diode laser subjected to an optical feedback, also called an external cavity diode laser, acts as the transmitter laser (TL). A solitary diode laser acts as the receiver laser (RL). The optical output of the TL is coupled to the RL and laser operating parameters are optimized to achieve synchronization in their output intensities. The time-of-flight between the TL and RL introduces an intercavity time delay in the dynamics of RL. In addition to this, an intracavity propagation delay arises as the TL's field propagated within the RL. This intracavity propagation delay is evaluated by cross-correlation analysis between the output intensities of the lasers. The intracavity propagation delay is found to increase as the external cavity feedback rate of TL is increased, while an increment in the injection rate between the two lasers resulted in a reduction of intracavity propagation delay.

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

NASA Technical Reports Server (NTRS)

Yu, A. W.; Krainak, M. A.; Unger, G. L.

1993-01-01

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Diode laser application in soft tissue oral surgery.

PubMed

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. The diode laser can be used as a modality for oral soft tissue surgery.

Diode Laser Application in Soft Tissue Oral Surgery

PubMed Central

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

High-power direct diode laser output by spectral beam combining

NASA Astrophysics Data System (ADS)

Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

2018-03-01

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Constricted double-heterojunction AlGaAs diode lasers - Structures and electrooptical characteristics

NASA Technical Reports Server (NTRS)

Botez, D.

1981-01-01

Constricted double-heterojunction (CDH) diode lasers are presented as a class of nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various CDH structures are discussed while treating such topics as liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers with positive-index lateral mode confinement provides single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C, while exhibiting light-current characteristics with second-harmonic distortions as low as -57 dB below the fundamental level. Semileaky guide CDH lasers with an asymmetric leaky cavity provide single-mode operation to 15-20 mW/facet CW, and to 50 mW/facet at 50% duty cycle.

The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

PubMed

Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

2016-06-01

The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P < 0.05). Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Integrated RGB laser light module for autostereoscopic outdoor displays

NASA Astrophysics Data System (ADS)

Reitterer, Jörg; Fidler, Franz; Hambeck, Christian; Saint Julien-Wallsee, Ferdinand; Najda, Stephen; Perlin, Piotr; Stanczyk, Szymon; Czernecki, Robert; McDougall, Stewart D.; Meredith, Wyn; Vickers, Garrie; Landles, Kennedy; Schmid, Ulrich

2015-02-01

We have developed highly compact RGB laser light modules to be used as light sources in multi-view autostereoscopic outdoor displays and projection devices. Each light module consists of an AlGaInP red laser diode, a GaInN blue laser diode, a GaInN green laser diode, as well as a common cylindrical microlens. The plano-convex microlens is a so-called "fast axis collimator", which is widely used for collimating light beams emitted from high-power laser diode bars, and has been optimized for polychromatic RGB laser diodes. The three light beams emitted from the red, green, and blue laser diodes are collimated in only one transverse direction, the so-called "fast axis", and in the orthogonal direction, the so-called "slow axis", the beams pass the microlens uncollimated. In the far field of the integrated RGB light module this produces Gaussian beams with a large ellipticity which are required, e.g., for the application in autostereoscopic outdoor displays. For this application only very low optical output powers of a few milliwatts per laser diode are required and therefore we have developed tailored low-power laser diode chips with short cavity lengths of 250 μm for red and 300 μm for blue. Our RGB laser light module including the three laser diode chips, associated monitor photodiodes, the common microlens, as well as the hermetically sealed package has a total volume of only 0.45 cm³, which to our knowledge is the smallest RGB laser light source to date.

Qualification of Laser Diode Arrays for Mercury Laser Altimeter

NASA Technical Reports Server (NTRS)

Stephen, Mark; Vasilyev, Aleksey; Schafer, John; Allan, Graham R.

2004-01-01

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance of Quasi-CW, High-power, laser diode arrays under extended use is presented. We report the optical power over several hundred million pulse operation and the effect of power cycling and temperature cycling of the laser diode arrays. Data on the initial characterization of the devices is also presented.

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism.

PubMed

Puri, Neerja

2015-01-01

Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum - garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, <25% reduction in hair density. It was seen that the percentage of hair reduction after two sessions of treatment was maximum (40%) in the diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser.

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism

PubMed Central

Puri, Neerja

2015-01-01

Introduction: Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. Aims: To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum — garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Materials and Methods: Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, <25% reduction in hair density. Results: It was seen that the percentage of hair reduction after two sessions of treatment was maximum (40%) in the diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. Conclusions: To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser. PMID:26157309

Ruggedized microchannel-cooled laser diode array with self-aligned microlens

DOEpatents

Freitas, Barry L.; Skidmore, Jay A.

2003-11-11

A microchannel-cooled, optically corrected, laser diode array is fabricated by mounting laser diode bars onto Si surfaces. This approach allows for the highest thermal impedance, in a ruggedized, low-cost assembly that includes passive microlens attachment without the need for lens frames. The microlensed laser diode array is usable in all solid-state laser systems that require efficient, directional, narrow bandwidth, high optical power density pump sources.

Iodine-stabilized single-frequency green InGaN diode laser.

PubMed

Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-01-01

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-03-01

TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

The Adjunctive Soft-Tissue Diode Laser in Orthodontics.

PubMed

Borzabadi-Farahani, Ali

2017-04-01

Lasers are a relatively new addition to the orthodontist's armamentarium. This article reviews the fundamental basic science of available soft-tissue lasers, with an emphasis on diode lasers, and discusses various adjunct applications of the diode laser for soft-tissue orthodontic procedures. Diode lasers function by cutting with an initiated hot tip and produce minimal to no interaction with healthy dental hard tissue, making them suitable for soft-tissue procedures. The contact cutting mode provides enhanced bloodless site visibility and facility to perform delicate soft tissue procedures, which is important in areas with difficult access. Such adjunctive uses include laser gingivectomy to improve oral hygiene or bracket positioning, esthetic laser gingival recontouring, and laser exposure of superficially impacted teeth. Selected cases treated with a 940-nm indium-gallium-arsenide-phosphide (InGaAsP) diode laser will be presented.

High power diode and solid state lasers

NASA Astrophysics Data System (ADS)

Eichler, H. J.; Fritsche, H.; Lux, O.; Strohmaier, S. G.

2017-01-01

Diode lasers are now basic pump sources of crystal, glass fiber and other solid state lasers. Progress in the performance of all these lasers is related. Examples of recently developed diode pumped lasers and Raman frequency converters are described for applications in materials processing, Lidar and medical surgery.

Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

NASA Astrophysics Data System (ADS)

Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

2018-05-01

We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

V-shaped resonators for addition of broad-area laser diode arrays

DOEpatents

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Dual wavelength laser diode excitation source for 2D photoacoustic imaging.

NASA Astrophysics Data System (ADS)

Allen, Thomas J.; Beard, Paul C.

2007-02-01

Photoacoustic methods can be used to make spatially resolved spectroscopic measurements of blood oxygenation when using a multiwavelength excitation source, such as an OPO system. Since these excitation sources are usually expensive and bulky, an alternative is to use laser diodes. A fibre coupled laser diode excitation system has been developed, providing two wavelengths, 850 and 905nm, each composed of 6 high peak power pulsed laser diodes. The system provided variable pulse durations (65-500ns) and repetition rates of up to 5KHz. The pulse energies delivered by the excitation system at 905nm and 850nm were measured to be 120μJ and 80μJ respectively for a 200ns pulse duration. To demonstrate the utility of the system, the excitation source was combined with an ultrasound detector to form a probe for in vivo single point measurements of superficial blood vessels. Changes in blood oxygenation and volume in the finger tip were monitored while making venous and arterial occlusions. To demonstrate the imaging capability of the excitation system, 2D photoacoustic images of a physiologically realistic phantom were obtained for a range of pulse durations using a cylindrical scanning system. The phantom was composed of cylindrical absorbing elements (μa=1mm^{-1}) of 2.7mm diameter, immersed in a 1% intralipid solution (μs=1mm^{-1}). This study demonstrated the potential use of laser diodes as an excitation source for photoacoustic imaging of superficial vascular structures.

WDM Nanoscale Laser Diodes for Si Photonic Interconnects

DTIC Science & Technology

2016-07-25

mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

Direct-current polarization characteristics of various AlGaAs laser diodes

NASA Technical Reports Server (NTRS)

Fuhr, P. L.

1984-01-01

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Nonimaging concentrators for diode-pumped slab lasers

NASA Astrophysics Data System (ADS)

Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland

1991-10-01

Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.

Laser-assisted selective fusing of thermal sprayed Ni-based self-fluxing alloys by using high-power diode lasers

NASA Astrophysics Data System (ADS)

Chun, Eun-Joon; Kim, Min-Su; Nishikawa, Hiroshi; Park, Changkyoo; Suh, Jeong

2018-03-01

Fusing treatment of Ni-based self-fluxing alloys (Metco-16C and 1276F) was performed using high-power diode lasers to control the temperature of the substrate's surface in real time. The effects of the fusing treatment temperature on the microstructural change and hardness distribution were also investigated. For Metco-16C and 1276F, the macrostructural inhomogeneity (voids) within the thermal sprayed layer decreased considerably as the fusing temperature increased. For both self-fluxing alloys, the optimal temperature for fusing was approximately 1423 K (for Metco-16C) and 1373 K (for 1276F), both of which are within the solid state temperature range; these temperatures maximize the alloy hardness together with the macrostructural homogeneity. In this temperature range, the microstructure consists of a lamellar-structured matrix phase with fine (<5 μm) carbides and borides. Selective fusing for a thermal sprayed layer 0.2-0.5 mm in thickness could be successfully achieved in a high-power diode laser system.

Short range laser obstacle detector. [for surface vehicles using laser diode array

NASA Technical Reports Server (NTRS)

Kuriger, W. L. (Inventor)

1973-01-01

A short range obstacle detector for surface vehicles is described which utilizes an array of laser diodes. The diodes operate one at a time, with one diode for each adjacent azimuth sector. A vibrating mirror a short distance above the surface provides continuous scanning in elevation for all azimuth sectors. A diode laser is synchronized with the vibrating mirror to enable one diode laser to be fired, by pulses from a clock pulse source, a number of times during each elevation scan cycle. The time for a given pulse of light to be reflected from an obstacle and received is detected as a measure of range to the obstacle.

Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm

NASA Astrophysics Data System (ADS)

Saidi, Hosni; Msahli, Melek; Ben Dhafer, Rania; Ridene, Said

2017-12-01

Band structure and optical gain properties of [111]-oriented AlGaInAs/AlGaInAs-delta-InGaAs multi-quantum wells, subjected to piezoelectric field, for the near-infrared lasers diodes applications was proposed and investigated in this paper. By using genetic algorithm based on optimization technique we demonstrate that the structural parameters can be conveniently optimized to achieve high-efficiency laser diode performance at room temperature. In this work, significant optical gain for the wished emission wavelength at 1.55 μm and low threshold injection current are the optimization target. The end result of this optimization is a laser diode based on InP substrate using quaternary compound material of AlGaInAs in both quantum wells and barriers with different composition. It has been shown that the transverse electric polarized optical gain which reaches 3500 cm-1 may be acquired for λ = 1.55 μm with a threshold carrier density Nth≈1.31018cm-3, which is very promising to serve as an alternative active region for high-efficiency near-infrared lasers. Finally, from the design presented here, we show that it is possible to apply this technique to a different III-V compound semiconductors and wavelength ranging from deep-ultra-violet to far infrared.

Thin planar package for cooling an array of edge-emitting laser diodes

DOEpatents

Mundinger, David C.; Benett, William J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar assemblies and active cooling of each assembly. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar assembly having the laser diode bar located proximate to one edge. In an array, a number of such thin planar assemblies are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink proximate to the laser diode bar to absorb heat generated by laser operation. To provide the coolant to the microchannels, each thin planar assembly comprises passageways that connect the microchannels to inlet and outlet corridors. Each inlet passageway may comprise a narrow slot that directs coolant into the microchannels and increases the velocity of flow therethrough. The corridors comprises holes extending through each of the assemblies in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has applications as an optical pump for high power solid state lasers, or by mating the diodes with fiber optic lenses. Further, the arrays can be useful in applications having space constraints and energy limitations, and in military and space applications. The arrays can be incorporated in equipment such as communications devices and active sensors.

Direct diode lasers and their advantages for materials processing and other applications

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of <10μs and repetition rates can be adjusted continuously from several kHz up to cw mode while addressing power levels from 0-100%. By combining trigger signals with analog modulations nearly any kind of pulse form can be realized. Diode lasers also offer a wide, adaptable range of wavelengths, and wavelength stabilization. We report a line width of less than 0.1nm while the wavelength stability is in the range of MHz which is comparable to solid state lasers. In terms of applications, especially our (broad) wavelength combining technology for power scaling opens the window to new processes of cutting or welding and process control. Fast power modulation through direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but also spurs the development of a wide variety of new applications.

Diode Laser Ear Piercing: A Novel Technique.

PubMed

Suseela, Bibilash Babu; Babu, Preethitha; Chittoria, Ravi Kumar; Mohapatra, Devi Prasad

2016-01-01

Earlobe piercing is a common office room procedure done by a plastic surgeon. Various methods of ear piercing have been described. In this article, we describe a novel method of laser ear piercing using the diode laser. An 18-year-old female patient underwent an ear piercing using a diode laser with a power of 2.0 W in continuous mode after topical local anaesthetic and pre-cooling. The diode laser was fast, safe, easy to use and highly effective way of ear piercing. The advantages we noticed while using the diode laser over conventional methods were more precision, minimal trauma with less chances of hypertrophy and keloids, no bleeding with coagulation effect of laser, less time taken compared to conventional method and less chance of infection due to thermal heat effect of laser.

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Efficient, diode-laser-pumped, diode-laser-seeded, high-peak-power Nd:YLF regenerative amplifier.

PubMed

Selker, M D; Afzal, R S; Dallas, J L; Yu, A W

1994-04-15

Optical amplification of 11 orders of magnitude in a microlens-collimated, diode-laser-pumped regenerative amplifier has been demonstrated. The amplifier was seeded with 20-ps pulses from an FM mode-locked oscillator and with 0.9-ns pulses from a modulated diode laser. Seed pulses from both sources were amplified to energies exceeding 2.5 mJ. With the thermoelectric coolers and the Pockels cell electronics neglected, the diode-seeded system exhibited an electrical-to-optical efficiency of 2.2%.

Compact 2100 nm laser diode module for next-generation DIRCM

NASA Astrophysics Data System (ADS)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

PubMed

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

InGaN laser diode with metal-free laser ridge using n+-GaN contact layers

NASA Astrophysics Data System (ADS)

Malinverni, Marco; Tardy, Camille; Rossetti, Marco; Castiglia, Antonino; Duelk, Marcus; Vélez, Christian; Martin, Denis; Grandjean, Nicolas

2016-06-01

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n+-type GaN layer deposited on top of the structure. The low sheet resistance of the n+-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n+-GaN top layer and the p++-GaN layer. Continuous-wave lasing at 400 nm with an output power of 100 mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA·cm-2.

Synergistic skin heat shock protein expression in response to combined laser treatment with a diode laser and ablative fractional lasers.

PubMed

Paasch, Uwe; Sonja, Grunewald; Haedersdal, Merete

2014-06-01

Diode laser-based skin heating has been shown to minimise scars by interfering with wound healing responses through the induction of heat shock proteins (HSP). HSP are also induced after ablative fractional laser (AFXL) wound healing. AFXL itself is highly recommended for scar treatment. Therefore, the sequential combination of both modalities may produce superior outcomes. The aim of this study was to examine the pretreatment effects of a diode laser before AFXL on wound healing responses in terms of HSP up-regulation in an in vitro model. Immediate responses and responses on days 1, 3 or 6 post-procedure were studied in an in vitro porcine skin model (n = 240). Untreated samples served as control. Immunohistochemical investigation (Hsp70) was performed in all untreated controls, diode laser-, AFXL-, and in diode laser + AFXL-treated samples. Hsp70 was shown to be up-regulated by all interventions between days 1 and 6 after interventions. The largest effect was caused by the combination of a diode laser and an AFXL procedure. Diode laser exposure induces a skin HSP response that can be further enhanced by sequential AFXL treatment. Clinical studies are necessary to investigate the dose response of HSP on scar formation and refine suitable laser exposure settings.

Geologic fracturing method and resulting fractured geologic structure

DOEpatents

Mace, Jonathan L.; Bradley, Christopher R.; Greening, Doran R.; Steedman, David W.

2016-11-08

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Schlieren with a laser diode source

NASA Technical Reports Server (NTRS)

Burner, A. W.; Franke, J. M.

1981-01-01

The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

Laser diode technology for coherent communications

NASA Technical Reports Server (NTRS)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Generation of 369.4 nm Radiation by Efficient Doubling of a Diode Laser

NASA Technical Reports Server (NTRS)

Williams, A.; Seidel, D. J.; Maleki, J.

1993-01-01

A resonant cavity second harmonic generation system has been developed to produce 369.4 nm radiation from a 738.8 nm diode laser with 10 mW nominal output power. This system utilizes a polarization technique to lock the cavity to the laser frequency. In this paper we report on an evaluation of the system using a Titanium:Sapphire laser as the input source, and preliminary results with a diode laser source. To our knowledge, this is the deepest uv light ever produced by frequency-doubling a diode laser.

A digital optical phase-locked loop for diode lasers based on field programmable gate array.

PubMed

Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

2012-09-01

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382∕MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad(2) and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

A digital optical phase-locked loop for diode lasers based on field programmable gate array

NASA Astrophysics Data System (ADS)

Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

2012-09-01

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad2 and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

We report on low threshold current density (<400 A cm-2) injection lasing in (Al x Ga1-x )0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15° for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm-2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ˜2 kA cm-2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211)A-grown structures.

Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

PubMed

Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

2014-08-01

The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation following laser surgery as assessed clinically on endonasal endoscopy was significantly reduced on 1,470 nm treated site compared to 940 nm diode laser treated site. Diode laser system (1,470 nm) induces efficient tissue effects compared to 940 nm diode laser system as shown in the tissue model experiment. From the clinical point of view, the healing process following non-contact diode laser application revealed to be improved using 1,470 nm diode laser compared to our standard diode laser practise with 940 nm. © 2014 Wiley Periodicals, Inc.

Initial evaluation of commercially available InGaAsP DFB laser diodes for use in high-speed digital fiber optic transceivers

NASA Technical Reports Server (NTRS)

Cook, Anthony L.; Hendricks, Herbert D.

1990-01-01

NASA has been pursuing the development of high-speed fiber-optic transceivers for use in a number of space data system applications. Current efforts are directed toward a high-performance all-integrated-circuit transceiver operating up to the 3-5 Gb/s range. Details of the evaluation and selection of candidate high-speed optical sources to be used in the space-qualified high-performance transceiver are presented. Data on the performance of commercially available DFB (distributed feedback) lasers are presented, and their performance relative to each other and to their structural design with regard to their use in high-performance fiber-optic transceivers is discussed. The DFB lasers were obtained from seven commercial manufacturers. The data taken on each laser included threshold current, differential quantum efficiency, CW side mode suppression radio, wavelength temperature coefficient, threshold temperature coefficient, natural linewidth, and far field pattern. It was found that laser diodes with buried heterostructures and first-order gratings had, in general, the best CW operating characteristics. The modulated characteristics of the DFB laser diodes are emphasized. Modulated linewidth, modulated side mode suppression ratio, and frequency response are discussed.

Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donin, V I; Yakovin, D V; Gribanov, A V

2015-12-31

The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the lasermore » field while the train contains single picosecond pulses. (control of laser radiation parameters)« less

Characterization of High-power Quasi-cw Laser Diode Arrays

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

Quasi-CW 110 kW AlGaAs Laser Diode Array Module for Inertial Fusion Energy Laser Driver

NASA Astrophysics Data System (ADS)

Kawashima, Toshiyuki; Kanzaki, Takeshi; Matsui, Ken; Kato, Yoshinori; Matsui, Hiroki; Kanabe, Tadashi; Yamanaka, Masanobu; Nakatsuka, Masahiro; Izawa, Yasukazu; Nakai, Sadao; Miyamoto, Masahiro; Kan, Hirofumi; Hiruma, Teruo

2001-12-01

We have successfully demonstrated a large aperture 803 nm AlGaAs diode laser module as a pump source for a 1053 nm, 10 J output Nd:glass slab laser amplifier for diode-pumped solid-state laser (DPSSL) fusion driver. Detailed performance results of the laser diode module are presented, including bar package and stack configuration, and their thermal design and analysis. A sufficiently low thermal impedance of the stack was realized by combining backplane liquid cooling configuration with modular bar package architecture. Total peak power of 110 kW and electrical to optical conversion efficiency of 46% were obtained from the module consisting of a total of 1000 laser diode bars. A peak intensity of 2.6 kW/cm2 was accomplished across an emitting area of 418 mm× 10 mm. Currently, this laser diode array module with a large two-dimensional aperture is, to our knowledge, the only operational pump source for the high output energy DPSSL.

Wavelength stabilized multi-kW diode laser systems

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery

PubMed Central

Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

2018-01-01

Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser. PMID:29619098

Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery.

PubMed

Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

2018-04-01

Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser.

New alternatives for laser vaporization of the prostate: experimental evaluation of a 980-, 1,318- and 1,470-nm diode laser device.

PubMed

Wezel, Felix; Wendt-Nordahl, Gunnar; Huck, Nina; Bach, Thorsten; Weiss, Christel; Michel, Maurice Stephan; Häcker, Axel

2010-04-01

Several diode laser systems were introduced in recent years for the minimal-invasive surgical therapy of benign prostate enlargement. We investigated the ablation capacities, hemostatic properties and extend of tissue necrosis of different diode lasers at wavelengths of 980, 1,318 and 1,470 nm and compared the results to the 120 W GreenLight HPS laser. The laser devices were evaluated in an ex vivo model using isolated porcine kidneys. The weight difference of the porcine kidneys after 10 min of laser vaporization defined the amount of ablated tissue. Blood loss was measured in blood-perfused kidneys following laser vaporization. Histological examination was performed to assess the tissue effects. The side-firing 980 and 1,470 nm diode lasers displayed similar ablative capacities compared to the GreenLight HPS laser (n.s.). The 1,318-nm laser, equipped with a bare-ended fiber, reached a higher ablation rate compared to the other laser devices (each P < 0.05). A calculated 'output power efficiency per watt' revealed that the 1,318-nm laser with a bare-ended fiber reached the highest rate compared to the side-firing devices (each P < 0.0001). All three diode lasers showed superior hemostatic properties compared to the GreenLight HPS laser (each P < 0.01). The extend of morphological tissue necrosis was 4.62 mm (1,318 nm), 1.30 mm (1,470 nm), 4.18 mm (980 nm) and 0.84 mm (GreenLight HPS laser), respectively. The diode lasers offered similar ablative capacities and improved hemostatic properties compared to the 120 W GreenLight HPS laser in this experimental ex vivo setting. The higher tissue penetration of the diode lasers compared to the GreenLight HPS laser may explain improved hemostasis.

Diode laser spectroscopy of the MnD radical ( 7Σ) and the determination of mass-independent parameters

NASA Astrophysics Data System (ADS)

Urban, Rolf-Dieter; Jones, Harold

1991-03-01

The infrared spectrum of the manganese deuteride radical has been observed in its ground electronic state ( 7Σ) using a diode-laser spectrometer. The hyperfine structure of a number of infrared transitions in the bands ν=1←0, ν=2←1 and ν=3←2 were measured with a nominal accuracy of ±0.001 cm -1. In all cases, the complete structure was easily resolved. Dunham parameters, spin—rotation and spin—spin coupling parameters were determined from the MnD data. A simultaneous fit of these data with those determined previously for MnH was carried out to determine mass-independent parameters and mass-scaling coefficients.

Innovative Facet Passivation for High-Brightness Laser Diodes

DTIC Science & Technology

2016-02-05

and anti-reflection (AR) coatings are deposited after cleaving. Edge- emitting laser diodes emit very high optical powers from small emission areas, as...SECURITY CLASSIFICATION OF: The objective of this effort is to increase the power of low fill-factor (20%) laser diode (LD) bars from the present...2012 16-Nov-2015 Approved for Public Release; Distribution Unlimited Final Report: Innovative Facet Passivation for High-Brightness Laser Diodes The

Comparison of the effect of diode laser versus intense pulsed light in axillary hair removal.

PubMed

Ormiga, Patricia; Ishida, Cleide Eiko; Boechat, Alvaro; Ramos-E-Silva, Marcia

2014-10-01

Devices such as diode laser and intense pulsed light (IPL) are in constant development aiming at permanent hair removal, but there are few comparative studies between these technologies. The objective was to comparatively assess axillary hair removal performed by diode laser and IPL and to obtain parameters of referred pain and evolution response for each method. A comparative prospective, double-blind, and randomized study of axillary hair removal performed by the diode laser and IPL was conducted in 21 females. Six sessions were held with application of the diode laser in one axilla and the IPL in the other, with intervals of 30 days and follow-up of 6 months after the last session. Clinical photographs and digital dermoscopy for hair counts in predefined and fixed fields of the treated areas were performed before, 2 weeks after the sixth session, and 6 months after the end of treatment. A questionnaire to assess the pain was applied. The number of hair shafts was significantly reduced with the diode laser and IPL. The diode laser was more effective, although more painful than the IPL. No serious, adverse, or permanent effects were observed with both technologies. Both diode laser and the IPL are effective, safe, and able to produce lasting results in axillary hair removal.

120W, NA_0.15 fiber coupled LD module with 125-μm clad/NA 0.22 fiber by spatial coupling method

NASA Astrophysics Data System (ADS)

Ishige, Yuta; Kaji, Eisaku; Katayama, Etsuji; Ohki, Yutaka; Gajdátsy, Gábor; Cserteg, András.

2018-02-01

We have fabricated a fiber coupled semiconductor laser diode module by means of spatial beam combining of single emitter broad area semiconductor laser diode chips in the 9xx nm band. In the spatial beam multiplexing method, the numerical aperture of the output light from the optical fiber increases by increasing the number of laser diodes coupled into the fiber. To reduce it, we have tried the approach to improving assembly process technology. As a result, we could fabricate laser diode modules having a light output power of 120W or more and 95% power within NA of 0.15 or less from a single optical fiber with 125-μm cladding diameter. Furthermore, we have obtained that the laser diode module maintaining high coupling efficiency can be realized even around the fill factor of 0.95. This has been achieved by improving the optical alignment method regarding the fast axis stack pitch of the laser diodes in the laser diode module. Therefore, without using techniques such as polarization combining and wavelength combining, high output power was realized while keeping small numerical aperture. This contributes to a reduction in unit price per light output power of the pumping laser diode module.

Comparison of the ablation ability of nucleus pulposus after 1,064 nm Nd:YAG laser and 980 nm diode laser radiation.

PubMed

Yin, Jian; Han, Zhengfeng; Guo, Baofeng; Guo, Han; Zhang, Tongtong; Zeng, Yanjun; Ren, Longxi

2015-07-01

To compare the ablation ability of nucleus pulposus after 1,064 nm Nd:YAG laser and 980 nm diode laser radiation. Goat spine specimen (GSS) was radiated using Nd:YAG laser and 980 nm diode laser and then divided into five groups based on the final energy--200, 400, 600, 800 and 1,000 J groups. The ablation quality of nucleus pulposus after radiation was recorded. The ablation quality of GSS was greater at higher radiation energies in both lasers. When compared at the same energy level, the ablation quality of GSS was greater in 980 nm diode laser than in 1,064 nm Nd:YAG laser. Statistical significance was observed in 200 and 400 J groups (P < 0.05) and in 600, 800 and 1,000 J groups (P < 0.01). Radiation with 980 nm diode laser showed better ablation ability than 1,064 nm Nd:YAG laser.

Diode Laser and Periodontal Regeneration-Assisted Management of Implant Complications in Anterior Maxilla.

PubMed

Salaria, Sanjeev Kumar; Sharma, Isha; Brar, Navjot Kaur; Kaur, Satwant

2018-01-01

Dental implant is being considered successful if the patient is pleased with both of its functional and esthetic outcome. As implant complications (such as peri-implantitis, inappropriate implant position, wrong angulation, and implant location too close to anatomical structures) have been frequently encountered in dental practice, therefore, thorough knowledge to manage such complications is the key prerequisite to prevent the failure of implant. The present case report discussed the etiology, diagnosis of early peri-implantitis, and periodontal abscess with their successful management through periodontal regeneration and diode laser-assisted therapy.

Beam control of high-power broad-area photonic crystal lasers using ladderlike groove structure

NASA Astrophysics Data System (ADS)

Wang, Tao; Wang, Lijie; Shu, Shili; Tian, Sicong; Lu, Zefeng; Hou, Guanyu; Lu, Huanyu; Tong, Cunzhu; Wang, Lijun

2017-06-01

The high-power broad-area (BA) photonic bandgap crystal (PBC) diode laser is promising as a high-brightness laser source, however, it suffers from poor lateral beam quality owing to the intrinsic drawback of BA lasers. In this paper, a ladderlike groove structure (LLGS) was proposed to improve both the lateral beam quality and emission power of BA PBC lasers. An approximately 15.4% improvement in output power and 25.2% decrease in the lateral beam parameter product (BPP) were realized and the underlying mechanism was discussed. On the basis of the one-dimensional PBC epitaxial structure, a stable vertical far field was demonstrated.

Perovskite Materials for Light-Emitting Diodes and Lasers.

PubMed

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Role of diode lasers (800-980 nm) as adjuncts to scaling and root planing in the treatment of chronic periodontitis: a systematic review.

PubMed

Qadri, Talat; Javed, Fawad; Johannsen, Gunnar; Gustafsson, Anders

2015-11-01

The purpose of this study was to systematically review currently available evidence regarding the role of diode lasers (810-980 nm) as adjuncts to scaling and root planing (SRP) in the treatment of chronic periodontitis (CP). Mechanical instrumentation of periodontal tissues followed by diode laser application leads to complete removal of pocket epithelium compared with conventional SRP. To address the focused question "Is SRP with adjunct diode lasers (810-980 nm) therapy more effective in the treatment of CP than when CP is treated by SRP alone?" databases were searched using the following key words: chronic periodontitis, diode laser, surgical, AND scaling and root planing, periodontal diseases, periodontal therapy, AND periodontal treatment. Original studies were included. Letters to the editor, case reports, commentaries, and reviews were excluded. Ten clinical studies were included. In all studies, patients were systemically healthy, and cigarette smokers were included in two studies. In five studies, SRP plus diode laser application was more effective in the treatment of CP than SRP, and three studies showed no difference. In two studies, there was a moderate reduction in periodontal inflammation using SRP plus diode laser. The diameter of optic fiber, laser wavelengths, power, pulse repetition rate, and duration of laser exposure ranged between 300 μm and 2 mm, 810-980 nm, 0.8-2.5 W, 10-60 Hz, and 10-100 ms, respectively. In CP patients with probing depths ≤5 mm, diode lasers, SRP plus diode laser (800-980 nm) is more effective in the treatment of CP than when SRP is used alone.

Holographic injection locking of a broad area laser diode via a photorefractive thin-film device.

PubMed

van Voorst, P D; de Wit, M R; Offerhaus, H L; Tay, S; Thomas, J; Peyghambarian, N; Boller, K-J

2007-12-24

We demonstrate locking of a high power broad area laser diode to a single frequency using holographic feedback from a photorefractive polymer thin-film device for the first time. A four-wave mixing setup is used to generate feedback for the broad area diode at the wavelength of the single frequency source (Ti:Sapphire laser) while the spatial distribution adapts to the preferred profile of the broad area diode. The result is an injection-locked broad area diode emitting with a linewidth comparable to the Ti:Sapphire laser.

High temperature semiconductor diode laser pumps for high energy laser applications

NASA Astrophysics Data System (ADS)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Efficacy of Diode Laser for the Management of Potentially Malignant Disorders.

PubMed

Reddy Kundoor, Vinay Kumar; Patimeedi, Ashwini; Roohi, Shameena; Maloth, Kotya Naik; Kesidi, Sunitha; Masabattula, Geetha Kumari

2015-01-01

Laser dentistry is a one of the upcoming advanced treatment modality for oral mucosal lesions. Diode laser is a soft tissue laser that has found much acceptance in all branches of dentistry. Available compact size and feasibility has render diode laser an enhanced tool for today's clinical practice. The aim of this study is to determine the efficacy and safety of diode laser for the management of white lesions such as oral leukoplakia (OL) and oral lichen planus (OLP). The study was conducted by using diode laser 980 nm on 10 patients with white lesions (5 OL and 5 OLP) aged between 35 to 65 years. Of the 10 patients (5 OL and 5 OLP), 3 patients (30%) complained of moderate pain and 7 patients (70%) complained of mild pain, for first 3 days after laser irradiation, and pain disappeared at end of first week. There was no recurrence of the lesion during the 6-month follow up. Diode lasers provide acceptable clinical improvement of potentially malignant lesions with minimal side effects. It can be considered one of the best alternative treatment modality for oral mucosal lesions.

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

NASA Astrophysics Data System (ADS)

Barletta, M.; Rubino, G.; Gisario, A.

2011-02-01

The use of a continuous wave-high power diode laser for removing surface Co-binder from Co-cemented tungsten carbide (WC-Co (5.8 wt%.)) hardmetal slabs was investigated. Combined scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction analyses were performed in order to study the phase transformations and micro-structural modifications of the WC-Co substrates occurring during and after laser irradiation. The micro-structure of the WC-Co progressively transforms as energy density increased, exhibiting stronger removal of Co and WC grain growth. At very high energy density, local melting of the WC grains with the formation of big agglomerates of interlaced grains is observed, and the crystalline structure of the irradiated substrate shows the presence of a brittle ternary eutectic phase of W, Co and C (often referred to as the η-phase). The latter can be detrimental to the mechanical properties of WC-Co. Therefore, the proper adjustment of the laser processing parameters plays a crucial role in surface treatments of WC-Co substrates prior to post-processing like diamond deposition.

The effect of bleaching gel and (940 nm and 980 nm) diode lasers photoactivation on intrapulpal temperature and teeth whitening efficiency.

PubMed

Al-Karadaghi, Tamara S; Al-Saedi, Asmaa A; Al-Maliky, Mohammed A; Mahmood, Ali S

2016-12-01

This in vitro study aimed to investigate the whitening efficacy of 940 nm and 980 nm diode laser photoactivation in tooth bleaching by analysing pulp chamber temperature, as well as the change in tooth colour. Root canals of thirty extracted human lower premolars were prepared. Laserwhite* 20 bleaching agent containing 38% of hydrogen peroxide was photoactivated with 7 W output power of 940 nm and 980 nm diode lasers for 120 s. Bleaching gel reduced 27-29% of the temperature from reaching the pulp chamber. For shade assessment, only the groups photoactivated using diode lasers showed statistically significant differences from control group P < 0.001. Within the studied parameters, both 940 nm and 980 nm diode lasers produced a safe pulp temperature increase. Diode laser photoactivation of bleaching gel resulted in more efficient teeth whitening. Photoactivation with 940 nm diode laser yielded the highest change in colour with only minor increase in pulp chamber temperature. © 2016 Australian Society of Endodontology Inc.

Promoting Robust Design of Diode Lasers for Space: A National Initiative

NASA Technical Reports Server (NTRS)

Tratt, David M.; Amzajerdian, Farzin; Kashem, Nasir B.; Shapiro, Andrew A.; Mense, Allan T.

2007-01-01

The Diode-laser Array Working Group (DAWG) is a national-level consumer/provider forum for discussion of engineering and manufacturing issues which influence the reliability and survivability of high-power broad-area laser diode devices in space, with an emphasis on laser diode arrays (LDAs) for optical pumping of solid-state laser media. The goals of the group are to formulate and validate standardized test and qualification protocols, operational control recommendations, and consensus manufacturing and certification standards. The group is using reliability and lifetime data collected by laser diode manufacturers and the user community to develop a set of standardized guidelines for specifying and qualifying laser diodes for long-duration operation in space, the ultimate goal being to promote an informed U.S. Government investment and procurement strategy for assuring the availability and durability of space-qualified LDAs. The group is also working to establish effective implementation of statistical design techniques at the supplier design, development, and manufacturing levels to help reduce product performance variability and improve product reliability for diodes employed in space applications

Far field beam pattern of one MW combined beam of laser diode array amplifiers for space power transmission

NASA Technical Reports Server (NTRS)

Kwon, Jin H.; Lee, Ja H.

1989-01-01

The far-field beam pattern and the power-collection efficiency are calculated for a multistage laser-diode-array amplifier consisting of about 200,000 5-W laser diode arrays with random distributions of phase and orientation errors and random diode failures. From the numerical calculation it is found that the far-field beam pattern is little affected by random failures of up to 20 percent of the laser diodes with reference of 80 percent receiving efficiency in the center spot. The random differences in phases among laser diodes due to probable manufacturing errors is allowed to about 0.2 times the wavelength. The maximum allowable orientation error is about 20 percent of the diffraction angle of a single laser diode aperture (about 1 cm). The preliminary results indicate that the amplifier could be used for space beam-power transmission with an efficiency of about 80 percent for a moderate-size (3-m-diameter) receiver placed at a distance of less than 50,000 km.

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

NASA Astrophysics Data System (ADS)

Souto, Jorge; Pura, José Luis; Jiménez, Juan

2017-06-01

In this work we study the catastrophic optical damage (COD) of graded-index separate confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The emphasis is placed on the impact that the nanoscale physical properties have on the operation and degradation of the active layers of these devices. When these laser diodes run in continuous-wave mode with high internal optical power densities, the QW and guide layers can experiment very intense local heating phenomena that lead to device failure. A thermo-mechanical model has been set up to study the mechanism of degradation. This model has been solved by applying finite element methods. A variety of physical factors related to the materials properties, which play a paramount role in the laser degradation process, have been considered. Among these, the reduced thicknesses of the QW and the guides lead to thermal conductivities smaller than the bulk figures, which are further reduced as extended defects develop in these layers. This results in a progressively deteriorating thermal management in the device. To the best of our knowledge, this model for laser diodes is the first one to have taken into account low scale mechanical effects that result in enhanced strengths in the structural layers. Moreover, the consequences of these conflicting size-dependent properties on the thermo-mechanical behaviour on the route to COD are examined. Subsequently, this approach opens the possibility of taking advantage of these properties in order to design robust diode lasers (or other types of power devices) in a controlled manner.

Comparative evaluation of photoablative efficacy of erbium: yttrium-aluminium-garnet and diode laser for the treatment of gingival hyperpigmentation. A randomized split-mouth clinical trial.

PubMed

Giannelli, Marco; Formigli, Lucia; Bani, Daniele

2014-04-01

The use of lasers in periodontology is a matter of debate, mainly because of the lack of consensual therapeutic protocols. In this randomized, split-mouth trial, the clinical efficacy of two different photoablative dental lasers, erbium:yttrium-aluminum-garnet (Er:YAG) and diode, for the treatment of gingival hyperpigmentation is compared. Twenty-one patients requiring treatment for mild-to-severe gingival hyperpigmentation were enrolled. Maxillary or mandibular left or right quadrants were randomly subjected to photoablative deepithelialization with either Er:YAG or diode laser. Masked clinical assessments of each laser quadrant were made at admission and days 7, 30, and 180 postoperatively by an independent observer. Histologic examination was performed before and soon after treatment and 6 months after irradiation. Patients also compiled a subjective evaluation questionnaire. Both diode and Er:YAG lasers gave excellent results in gingival hyperpigmentation. However, Er:YAG laser induced deeper gingival tissue injury than diode laser, as judged by bleeding at surgery, delayed healing, and histopathologic analysis. The use of diode laser showed additional advantages compared to Er:YAG in terms of less postoperative discomfort and pain. This study highlights the efficacy of diode laser for photoablative deepithelialization of hyperpigmented gingiva. It is suggested that this laser can represent an effective and safe therapeutic option for gingival photoablation.

Fully utilizing high power diode lasers by synergizing diode laser light sources and beam shaping micro-optics

NASA Astrophysics Data System (ADS)

Fan, Yingmin; Wang, Jingwei; Cai, Lei; Mitra, Thomas; Hauschild, Dirk; Zah, Chung-En; Liu, Xingsheng

2018-02-01

High power diode lasers (HPDLs) offer the highest wall-plug efficiency, highest specific power (power-to-weight ratio), arguably the lowest cost and highest reliability among all laser types. However, the poor beam quality of commercially HPDLs is the main bottleneck limiting their direct applications requiring high brightness at least in one dimension. In order to expand the applications of HPDLs, beam shaping and optical design are essential. In this work, we report the recent progresses on maximizing applications of HPDLs by synergizing diode laser light source and beam shaping micro-optics. Successful examples of matching of diode laser light sources and beam shaping micro-optics driving new applications are presented.

Spatial Combining of Laser-Diode Beams for Pumping an NPRO

NASA Technical Reports Server (NTRS)

Gelsinger, Paul; Liu, Duncan; Mulder, Jerry; Aguayo, Francisco

2008-01-01

A free-space optical beam combiner now undergoing development makes it possible to use the outputs of multiple multimode laser diodes to pump a neodymium-doped yttrium aluminum garnet (Nd:YAG) non-planar ring oscillator (NPRO) laser while ensuring that the laser operates at only a single desired frequency. Heretofore, a Nd:YAG NPRO like the present one has been pumped by a single multimode laser-diode beam delivered via an optical fiber. It would be desirable to use multiple pump laser diodes to increase reliability beyond that obtainable from a single pump laser diode. However, as explained in this article, simplistically coupling multiple multimode laser-diode beams through a fiber-optic combiner would entail a significant reduction in coupling efficiency, and lasing would occur at one or more other frequencies in addition to the single desired frequency. To minimize coupling loss, one must ensure that the NA (approximately equal to 0.3) of the combined laser-diode beams is less than the NA of the fiber. The A(Omega) of the laser-diode beam in the slow-axis plane is 1/1.3 as large as that of the fiber. This A(Omega) is small enough to enable efficient coupling of light into the optical fiber, but too large for combining of beams in the slow-axis plane. Therefore, a pair of cylindrical lenses is used to cancel the slow-axis plane magnification introduced by the on-cylindrical lenses used to effect magnification in the fast-axis plane.

Disruptive laser diode source for embedded LIDAR sensors

NASA Astrophysics Data System (ADS)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources will be given. Future work leads will be discussed for miniaturization of the laser diode and drastic cost reduction.

Dental Enamel Irradiated with Infrared Diode Laser and Photoabsorbing Cream: Part 1—FT-Raman Study

PubMed Central

Dos Santos, Edson Aparecido Pereira; Soares, Luís Eduardo Silva; Do Espírito Santo, Ana Maria; Martin, Airton Abrahão; Duarte, Danilo Antônio; Pacheco-Soares, Cristina; Brugnera, Aldo

2009-01-01

Abstract Objective: The aim of this FT-Raman study was to investigate laser-induced compositional changes in enamel after therapy with a low-level infrared diode laser and a photoabsorbing cream, in order to intensify the superficial light absorption before and after cariogenic challenge. Background Data: Dental caries remains the most prevalent disease during childhood and adolescence. Preventive modalities include the use of fluoride, reduction of dietary cariogenic refined carbohydrates, plaque removal and oral hygiene techniques, and antimicrobial prescriptions. A relatively simple and noninvasive caries preventive regimen is treating tooth enamel with laser irradiation, either alone or in combination with topical fluoride treatment, resulting in reduced enamel solubility and dissolution rates. Due to their high cost, high-powered lasers are still not widely employed in private practice in developing countries. Thus, low-power red and near-infrared lasers appear to be an appealing alternative. Materials and Methods: Twenty-four extracted or exfoliated caries-free deciduous molars were divided into six groups: control group (no treatment; n = 8); infrared laser treatment (L; n = 8) (810 nm at 100 mW/cm2 for 90 sec); infrared diode laser irradiation (810 nm at 100 mW/cm2 for 90 sec) and photoabsorbing cream (IVL; n = 8); photoabsorbing cream alone (IV; n = 8); infrared diode laser irradiation (810 nm at 100 mW/cm2 for 90 sec) and fluorinated photoabsorbing agent (IVLF; n = 8); and fluorinated photoabsorbing agent alone (IVF; n = 8). Samples were analyzed using FT-Raman spectroscopy before and after pH cycling cariogenic challenge. Results: There was a significant laser-induced reduction and possible modification of the organic matrix content in enamel treated with the low-level diode laser (the L, IVL, and IVFL groups). Conclusion: The FT-Raman technique may be suitable for detecting compositional and structural changes occurring in mineral phases and organic phases of lased enamel under cariogenic challenge. PMID:19415988

Reliability of High Power Laser Diode Arrays Operating in Long Pulse Mode

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

2006-01-01

Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime.

Narrowband diode laser pump module for pumping alkali vapors.

PubMed

Rotondaro, M D; Zhdanov, B V; Shaffer, M K; Knize, R J

2018-04-16

We describe a method of line narrowing and frequency-locking a diode laser stack to an alkali atomic line for use as a pump module for Diode Pumped Alkali Lasers. The pump module consists of a 600 W antireflection coated diode laser stack configured to lase using an external cavity. The line narrowing and frequency locking is accomplished by introducing a narrowband polarization filter based on magneto-optical Faraday effect into the external cavity, which selectively transmits only the frequencies that are in resonance with the 6 2 S 1/2 → 6 2 P 3/2 transition of Cs atoms. The resulting pump module has demonstrated that a diode laser stack, which lases with a line width of 3 THz without narrowbanding, can be narrowed to 10 GHz. The line narrowed pump module produced 518 Watts that is 80% of the power generated by the original broadband diode laser stack.

Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers

NASA Astrophysics Data System (ADS)

Werner, Nils; Wegemund, Jan; Gerke, Sebastian; Feise, David; Bugge, Frank; Paschke, Katrin; Tränkle, Günther

2018-02-01

Diode lasers with ridge waveguide structures and wavelength stabilization by a distributed Bragg-reflector (DBR) are key components for many different applications. These lasers provide diffraction limited laser emission in a single spectral mode, while an arbitrary emission wavelength can be chosen as long as the semiconductor allows for amplification. Furthermore, the DBR grating can be fabricated during the lateral structuring of the device which makes them well suited for mass production. A variety of different concepts can be used for the actual realization of the laser. While standard DBR ridge waveguide lasers (DBR-RWL) with a DBR as reflection grating provide up to 1W optical output power, the DBR can be also used as transmission grating for improved efficiency. Furthermore, more complex structures like monolithic master oscillator power amplifiers (MOPA), which show less spectral mode hops than DBR-RWLs, have been fabricated. The wide range of possible applications have different requirements on the emission characteristic of the used lasers. While the lasers can fulfill the requirements on the emission spectrum and the optical output power, the effects due to optical feedback from optical elements of the setup may limit their practical use in the respective application. Thus, it is of high importance to analyze the emission behavior of the different laser designs at various operation conditions with and without optical feedback. Here, the detailed investigation of the emission characteristics of lasers at an exemplary emission wavelength of 1120 nm is be presented.

Sialolith removal in the submandibular region using surgical diode laser: report of two cases and literature review.

PubMed

Haas, Orion Luiz; Scolari, Neimar; da Silva Meirelles, Lucas; Favoretto, André Xavier; de Oliveira, Rogério Belle

2018-03-01

Sialolithiasis is defined as the presence of one or more calcified structures within the duct of a major or minor salivary gland. It occurs as a result of deposition of calcium salts around an accumulation of organic debris in the duct lumen. The main signs and symptoms are edema and bacterial infection with abscess formation. This study aimed to report two cases of submandibular sialolithiasis treated surgically with diode laser and conduct a review of the literature by means of a systematic search. In the two cases, the calculi were located in the distal part of the submandibular duct and could be palpated intraorally. Surgery was performed in an outpatient setting under local anesthesia. A linear incision was made in the floor of the mouth, in the region of the opening of Wharton's duct, to expose and remove the calculi. Laser cutting was performed using a diode laser module coupled to a 400-μm optical fiber emitting at a wavelength of 980 nm (infrared), 2.5 W output power, and in continuous pulse mode. The use of diode laser is a safe and minimally invasive option for this type of procedure. Offering advantages such as enhanced coagulation properties and high-quality incision, absence of bleeding, low risk of nerve damage, and few comorbidities.

Green high-power tunable external-cavity GaN diode laser at 515  nm.

PubMed

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-09-15

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode laser system.

Safety and efficacy of low fluence, high repetition rate versus high fluence, low repetition rate 810-nm diode laser for axillary hair removal in Chinese women.

PubMed

Li, Wenhai; Liu, Chengyi; Chen, Zhou; Cai, Lin; Zhou, Cheng; Xu, Qianxi; Li, Houmin; Zhang, Jianzhong

2016-11-01

High-fluence diode lasers with contact cooling have emerged as the gold standard to remove unwanted hair. Lowering the energy should result in less pain and could theoretically affect the efficacy of the therapy. To compare the safety and efficacy of a low fluence high repetition rate 810-nm diode laser to those of a high fluence, low repetition rate diode laser for permanent axillary hair removal in Chinese women. Ninety-two Chinese women received four axillae laser hair removal treatments at 4-week intervals using the low fluence, high repetition rate 810-nm diode laser in super hair removal (SHR) mode on one side and the high fluence, low repetition rate diode laser in hair removal (HR) mode on the other side. Hair counts were done at each follow-up visit and 6-month follow-up after the final laser treatment using a "Hi Quality Hair Analysis Program System"; the immediate pain score after each treatment session was recorded by a visual analog scale. The overall median reduction of hair was 90.2% with the 810-nm diode laser in SHR mode and 87% with the same laser in HR mode at 6-month follow-up. The median pain scores in SHR mode and in HR mode were 2.75 and 6.75, respectively. Low fluence, high repetition rate diode laser can efficiently remove unwanted hair but also significantly improve tolerability and reduce adverse events during the course of treatment.

GreenLight laser vs diode laser vaporization of the prostate: 3-year results of a prospective nonrandomized study.

PubMed

Guo, Sanwei; Müller, Georg; Bonkat, Gernot; Püschel, Heike; Gasser, Thomas; Bachmann, Alexander; Rieken, Malte

2015-04-01

Laser vaporization of the prostate is one of the alternatives to transurethral resection of the prostate. Short-term studies report a comparable outcome after laser vaporization with the 532 nm 120-W GreenLight high-performance system (HPS) laser and the 980 nm 200 W high-intensity diode (diode) laser. In this study, we analyzed the intermediate-term results of both techniques. From January 2007 to January 2008, 112 consecutive patients with symptomatic benign prostate enlargement were nonrandomly assigned to treatment with the GreenLight laser or the diode laser. Perioperative parameters, postoperative functional outcome, complications, and the reoperation rate at 3 years were analyzed. Improvement of voiding symptoms (International Prostate Symptom Score, quality-of-life) and micturition parameters (maximum flow rate, postvoid residual volume) showed no significant difference between the HPS group and the diode group. A significantly higher reoperation rate was observed in the diode group in comparison to the HPS group (37.5% vs 8.9%, p=0.0003) due to obstructive necrotic tissue (16.1% vs 0%, p=0.0018), bladder neck stricture (16.1% vs 1.8%, p=0.008), and persisting or recurrent adenoma (5.4% vs 7.1%, p=0.70), respectively. Both lasers lead to comparable improvement of voiding parameters and micturition symptoms. Treatment with the 200 W diode laser led to a significantly higher reoperation rate, which might be attributed to a higher degree of coagulation necrosis. Thus, a careful clinical application of this diode laser type is warranted.

Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics

NASA Astrophysics Data System (ADS)

Hongqi, Jing; Li, Zhong; Yuxi, Ni; Junjie, Zhang; Suping, Liu; Xiaoyu, Ma

2015-10-01

A novel high-efficiency cooling mini-channel heat-sink structure has been designed to meet the package technology demands of high power density laser diode array stacks. Thermal and water flowing characteristics have been simulated using the Ansys-Fluent software. Owing to the increased effective cooling area, this mini-channel heat-sink structure has a better cooling effect when compared with the traditional macro-channel heat-sinks. Owing to the lower flow velocity in this novel high efficient cooling structure, the chillers' water-pressure requirement is reduced. Meanwhile, the machining process of this high-efficiency cooling mini-channel heat-sink structure is simple and the cost is relatively low, it also has advantages in terms of high durability and long lifetime. This heat-sink is an ideal choice for the package of high power density laser diode array stacks. Project supported by the Defense Industrial Technology Development Program (No. B1320133033).

Self-tuning method for monitoring the density of a gas vapor component using a tunable laser

DOEpatents

Hagans, Karla; Berzins, Leon; Galkowski, Joseph; Seng, Rita

1996-01-01

The present invention relates to a vapor density monitor and laser atomic absorption spectroscopy method for highly accurate, continuous monitoring of vapor densities, composition, flow velocity, internal and kinetic temperatures and constituent distributions. The vapor density monitor employs a diode laser, preferably of an external cavity design. By using a diode laser, the vapor density monitor is significantly less expensive and more reliable than prior art vapor density monitoring devices. In addition, the compact size of diode lasers enables the vapor density monitor to be portable. According to the method of the present invention, the density of a component of a gas vapor is calculated by tuning the diode laser to a frequency at which the amount of light absorbed by the component is at a minimum or a maximum within about 50 MHz of that frequency. Laser light from the diode laser is then transmitted at the determined frequency across a predetermined pathlength of the gas vapor. By comparing the amount of light transmitted by the diode laser to the amount of light transmitted after the laser light passes through the gas vapor, the density of the component can be determined using Beer's law.

Self-tuning method for monitoring the density of a gas vapor component using a tunable laser

DOEpatents

Hagans, K.; Berzins, L.; Galkowski, J.; Seng, R.

1996-08-27

The present invention relates to a vapor density monitor and laser atomic absorption spectroscopy method for highly accurate, continuous monitoring of vapor densities, composition, flow velocity, internal and kinetic temperatures and constituent distributions. The vapor density monitor employs a diode laser, preferably of an external cavity design. By using a diode laser, the vapor density monitor is significantly less expensive and more reliable than prior art vapor density monitoring devices. In addition, the compact size of diode lasers enables the vapor density monitor to be portable. According to the method of the present invention, the density of a component of a gas vapor is calculated by tuning the diode laser to a frequency at which the amount of light absorbed by the component is at a minimum or a maximum within about 50 MHz of that frequency. Laser light from the diode laser is then transmitted at the determined frequency across a predetermined pathlength of the gas vapor. By comparing the amount of light transmitted by the diode laser to the amount of light transmitted after the laser light passes through the gas vapor, the density of the component can be determined using Beer`s law. 6 figs.

Active mode-locked operation of a diode pumped colour-centre laser

NASA Astrophysics Data System (ADS)

Mazighi, K.; Doualan, J. L.; Hamel, J.; Margerie, J.; Mounier, D.; Ostrovsky, A.

1991-09-01

The cw laser diode pumping of an (F +2) ∗ colour centre laser has been recently demonstrated in our laboratory. The intensity of the pumping diode can easily be hf modulated. We present here the first experiments in which the colour centre laser is synchronously pumped at the mode spacing frequency, resulting in the emission of clean, regularly spaced pulses. The opto-electronic feedback is a very promising method of obtaining such a pulsed operation of a diode pumped colour centre laser without the use of an external hf oscillator.

Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, Raymond J.; Benett, William J.; Mills, Steven T.

1997-01-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

Two-beam combined 3.36  J, 100  Hz diode-pumped high beam quality Nd:YAG laser system.

PubMed

Qiu, J S; Tang, X X; Fan, Z W; Wang, H C; Liu, H

2016-07-20

In this paper, we develop a diode-pumped all-solid-state high-energy and high beam quality Nd:YAG laser system. A master oscillator power amplifier structure is used to provide a high pulse energy laser output with a high repetition rate. In order to decrease the amplifier working current so as to reduce the impact of the thermal effect on the beam quality, a beam splitting-amplifying-combining scheme is adopted. The energy extraction efficiency of the laser system is 50.68%. We achieve 3.36 J pulse energy at a 100 Hz repetition rate with a pulse duration of 7.1 ns, a far-field beam spot 1.71 times the diffraction limit, and 1.07% energy stability (RMS).

Evaluation of the Diode laser (810nm, 980 nm) on color change of teeth after external bleaching

PubMed Central

Kiomars, Nazanin; Azarpour, Pouneh; Mirzaei, Mansooreh; Hashemi kamangar, Sedighe Sadat; Kharazifard, Mohammad Javad

2016-01-01

Subject and aim: The aim of this study was to evaluate the efficiency of diode laser-activated bleaching systems for color change of teeth. Materials & Methods: 40 premolars with intact enamel surfaces were selected for five external bleaching protocols (n=8). Two different wavelengths of diode laser (810 and 980 nm) with two different hydrogen peroxide concentrations (30% and 46%) were selected for laser bleaching. Group 1 received bleaching (Heydent- Germany) with a 810 nm diode laser; Group 2 received bleaching (Heydent- Germany) with a 980 nm diode laser; Group 3 received bleaching (laser white*20- Biolase) with a 810 nm diode laser; Group 4 received bleaching (laser white*20- Biolase) with a 980 nm diode laser, with an output power of 1.5 W, in continuous wave (cw) mode for each irradiation. Group 5 as control group received 40% hydrogen peroxide (Opalescence Boost, Ultradent-USA) with no light activation. The color of teeth was scored at baseline and 1 week after bleaching with spectrophotometer. Color change data on the CIEL*a*b* system were analyzed statistically by the one-way ANOVA and Tukey's HSD test. Results: All the bleaching techniques resulted in shade change. According to ΔE values, all techniques were effective to bleach the teeth (ΔE ≥ 3). Statistically significant differences were detected among bleaching protocols (p=0.06). Regarding shade change values expressed as ΔL*, Δa*, Δb*, ΔE*, laser bleached groups were no statistically different with each other (p>0.05). Conclusion: Bleaching with different wavelengths of diode laser resulted in the same results. PMID:28765671

Evaluation of the Diode laser (810nm, 980 nm) on color change of teeth after external bleaching.

PubMed

Kiomars, Nazanin; Azarpour, Pouneh; Mirzaei, Mansooreh; Hashemi Kamangar, Sedighe Sadat; Kharazifard, Mohammad Javad; Chiniforush, Nasim

2016-12-30

Subject and aim: The aim of this study was to evaluate the efficiency of diode laser-activated bleaching systems for color change of teeth. Materials & Methods: 40 premolars with intact enamel surfaces were selected for five external bleaching protocols (n=8). Two different wavelengths of diode laser (810 and 980 nm) with two different hydrogen peroxide concentrations (30% and 46%) were selected for laser bleaching. Group 1 received bleaching (Heydent- Germany) with a 810 nm diode laser; Group 2 received bleaching (Heydent- Germany) with a 980 nm diode laser; Group 3 received bleaching (laser white*20- Biolase) with a 810 nm diode laser; Group 4 received bleaching (laser white*20- Biolase) with a 980 nm diode laser, with an output power of 1.5 W, in continuous wave (cw) mode for each irradiation. Group 5 as control group received 40% hydrogen peroxide (Opalescence Boost, Ultradent-USA) with no light activation. The color of teeth was scored at baseline and 1 week after bleaching with spectrophotometer. Color change data on the CIEL*a*b* system were analyzed statistically by the one-way ANOVA and Tukey's HSD test. Results: All the bleaching techniques resulted in shade change. According to ΔE values, all techniques were effective to bleach the teeth (ΔE ≥ 3). Statistically significant differences were detected among bleaching protocols (p=0.06). Regarding shade change values expressed as ΔL*, Δa*, Δb*, ΔE*, laser bleached groups were no statistically different with each other (p>0.05). Conclusion: Bleaching with different wavelengths of diode laser resulted in the same results.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE PAGES

Liu, Bo; Braiman, Yehuda

2018-02-06

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

NASA Astrophysics Data System (ADS)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Research and Development of Laser Diode Based Instruments for Applications in Space

NASA Technical Reports Server (NTRS)

Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg

1999-01-01

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

High brightness laser-diode device emitting 160 watts from a 100 μm/NA 0.22 fiber.

PubMed

Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

2015-11-10

A practical method of achieving a high-brightness and high-power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by a beam transformation system, free-space beam combining, and polarization beam combining based on a mini-bar laser-diode chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 100 μm core diameter and 0.22 numerical aperture (NA) could reach 174 W, with equalizing brightness of 14.2  MW/(cm2·sr). By this method, much wider applications of fiber-coupled laser-diodes are anticipated.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bo; Braiman, Yehuda

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Transurethral vaporesection of prostate: diode laser or thulium laser?

PubMed

Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

2018-05-01

This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p < 0.05). Each group had dramatic improvements in IPSS, QoL, Q max , AFR, and PVR compared with the preoperative values (p < 0.05), although there were no significant differences between the two groups. Use of both diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

Modular package for cooling a laser diode array

DOEpatents

Mundinger, David C.; Benett, William J.; Beach, Raymond J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar packages and active cooling. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar package having the laser diode bar located proximate to one edge. In an array, a number of such thin planar packages are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink that is attached proximate to the laser bar so that it absorbs heat generated by laser operation. To provide the coolant to the microchannels, each thin planar package comprises a thin inlet manifold and a thin outlet manifold connected to an inlet corridor and an outlet corridor. The inlet corridor comprises a hole extending through each of the packages in the array, and the outlet corridor comprises a hole extending through each of the packages in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has application as an optical pump for high power solid state lasers. Further, it can be incorporated in equipment such as communications devices and active sensors, and in military and space applications, and it can be useful in applications having space constraints and energy limitations.

Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

2017-03-01

Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

Diode Laser Measurements of Concentration and Temperature in Microgravity Combustion

NASA Technical Reports Server (NTRS)

Silver, Joel A.; Kane, Daniel J.

1999-01-01

Diode laser absorption spectroscopy provides a direct method of determinating species concentration and local gas temperature in combustion flames. Under microgravity conditions, diode lasers are particularly suitable, given their compact size, low mass and low power requirements. The development of diode laser-based sensors for gas detection in microgravity is presented, detailing measurements of molecular oxygen. Current progress of this work and future application possibilities for these methods on the International Space Station are discussed.

A randomised controlled trial of coblation, diode laser and cold dissection in paediatric tonsillectomy.

PubMed

Elbadawey, M R; Hegazy, H M; Eltahan, A E; Powell, J

2015-11-01

This study aimed to compare the efficacy of diode laser, coblation and cold dissection tonsillectomy in paediatric patients. A total of 120 patients aged 10-15 years with recurrent tonsillitis were recruited. Participants were prospectively randomised to diode laser, coblation or cold dissection tonsillectomy. Operative time and blood loss were recorded. Pain was recorded on a Wong-Baker FACES(®) pain scale. The operative time (10 ± 0.99 minutes), blood loss (20 ± 0.85 ml) and pain were significantly lower with coblation tonsillectomy than with cold dissection tonsillectomy (20 ± 1.0 minutes and 30 ± 1.0 ml; p = 0.0001) and diode laser tonsillectomy (15 ± 0.83 minutes and 25 ± 0.83 ml; p = 0.0001). Diode laser tonsillectomy had a shorter operative time (p = 0.0001) and less blood loss (p = 0.001) compared with cold dissection tonsillectomy. However, at post-operative day seven, the diode laser tonsillectomy group had significantly higher pain scores compared with the cold dissection (p = 0.042) and coblation (p = 0.04) tonsillectomy groups. Both coblation and diode laser tonsillectomy are associated with significantly reduced blood loss and shorter operative times compared with cold dissection tonsillectomy. However, we advocate coblation tonsillectomy because of the lower post-operative pain scores compared with diode laser and cold dissection tonsillectomy.

Active stabilization of a diode laser injection lock.

PubMed

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-06-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure

NASA Astrophysics Data System (ADS)

Onishi, Toshikazu; Imafuji, Osamu; Fukuhisa, Toshiya; Mochida, Atsunori; Kobayashi, Yasuhiro; Yuri, Masaaki; Itoh, Kunio; Shimizu, Hirokazu

2001-11-01

Monolithically integrated 780-nm-band and 650-nm-band self-sustained pulsating (SSP) lasers, which are desirable for simplified optical pickups in digital versatile disk (DVD) systems, have been developed for the first time. The real refractive index guided self-aligned (RISA) waveguide structure is adapted to reduce absorption loss in the current blocking layers. In order to obtain stable SSP, a saturable absorber formed in the active layer outside the current stripe, and a saturable absorbing layer above the active layer are utilized for the 780-nm-band and 650-nm-band laser diodes (LDs), respectively. Relative intensity noise less than -130 dB/Hz is maintained at temperatures of up to 80°C at an output power of 7 mW for the 650 nm band and 10 mW for the 780 nm band, which suggests that stable SSP operations have been realized.

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, Barry L.

1998-01-01

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver>4kW/cm2 of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources.

Indocyanine green-augmented diode laser therapy of telangiectatic leg veins: a randomized controlled proof-of-concept trial.

PubMed

Klein, Annette; Bäumler, Wolfgang; Koller, Michael; Shafirstein, Gal; Kohl, Elisabeth A; Landthaler, Michael; Babilas, Philipp

2012-07-01

Telangiectatic leg veins, which affect about 40-50% of adults, represent a frequent cosmetic rather than a medical problem. Besides sclerotherapy, various laser devices are common treatment options. However, complete clearance rates can only be achieved in a small number of patients. In this proof-of-concept study, the safety and efficacy of indocyanine green (ICG)-augmented diode laser therapy (808 nm) was evaluated for the treatment of telangiectatic leg veins. ICG (2 mg/kg body weight) was intravenously administered in 15 female patients (skin type II to III) with telangiectatic leg veins (measuring between 0.25 and 3 mm in diameter). Immediately after ICG injection, diode laser pulses with different radiant exposures (50-110 J/cm(2)) were applied as one single treatment. Safety and efficacy were assessed 1 and 3 months after treatment by a blinded investigator and the patient. Treatments with the pulsed dye laser (PDL) and the diode laser without ICG served as reference therapies. The safety of ICG application and diode laser treatment was excellent in all patients with no persisting side effects. Vessel clearance was dose-dependent. Diode laser treatment at radiant exposures between 100 and 110 J/cm(2) resulted in good vessel clearance, which even improved to excellent after the application of double pulses. Diode laser therapy without ICG and PDL treatment induced poor to moderate clearance of telangiectatic leg veins. ICG-augmented diode laser therapy has proved to be a safe and effective treatment option for telangiectatic leg veins. Copyright © 2012 Wiley Periodicals, Inc.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Degradation phenomena in laser diodes

NASA Astrophysics Data System (ADS)

Beister, G.; Krispin, P.; Maege, J.; Richter, G.; Weber, H.; Rechenberg, I.

1988-11-01

Accelerated tests on GaAlAs/GaAs double heterostructure laser diodes showed, in agreement with earlier results on light-emitting diodes, that ageing appeared in three distinct forms: initial and slow degradation stages, both obeying a logarithmic time dependence, and a superimposed "gradation" (enhancement of the output power). Measurements made by the method of deep level transient spectroscopy during the accelerated tests on these lasers, operated as light-emitting diodes, revealed the appearance right from the beginning of B levels attributed to the antisite GaAs defects. The B levels appeared again in diodes tested in the lasing mode. In the case of a group of 21 laser diodes the mean time-to-failure was 9000 h at 70°C for 5 mW (in accordance with the Weibull statistics of degradation rates).

Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoya, Toshiyuki; Miranda, Martin; Inoue, Ryotaro

2015-07-15

We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources formore » laser cooling experiments including transportable optical lattice clocks.« less

High power diode lasers emitting from 639 nm to 690 nm

NASA Astrophysics Data System (ADS)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

SrMoO4:Er3+-Yb3+ upconverting phosphor for photonic and forensic applications

NASA Astrophysics Data System (ADS)

Soni, Abhishek Kumar; Rai, Vineet Kumar

2016-08-01

The Er3+-Yb3+ codoped strontium molybdate (SrMoO4) phosphors have been synthesized via chemical co-precipitation method by adding ammonium hydroxide as a base reagent. The phase, crystal structure and formation of spindle-like particles present in the prepared phosphors have been recognized by using the X-ray powder diffraction (XRPD) and Field emission scanning electron microscopy (FE-SEM) techniques. The Fourier transform infrared (FTIR) spectroscopy of the developed phosphors has been analyzed to mark the different functional groups present in synthesized phosphors. The multicolour upconversion emissions observed upon excitation with 980 nm and 808 nm laser diode have been explained on the basis of dopants ions concentration, pump power dependence, energy level structure and decay curve analysis. The colour co-ordinate study confirmed that the codoped phosphor emits non-tunable green colour when excited with the 980 nm laser diode, whereas it shows the colour tunability from yellow to green region upon excitation with the 808 nm laser diode. The applicability of non-tunable green colour emission has been demonstrated in the security ink and latent finger print detection. This shows the utility of the developed phosphors in the photonic and forensic applications.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

NASA Astrophysics Data System (ADS)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Diode laser (980nm) cartilage reshaping

NASA Astrophysics Data System (ADS)

El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

2011-03-01

Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

Ablation of dentin by irradiation of violet diode laser

NASA Astrophysics Data System (ADS)

Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

2006-02-01

Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

Photonic Breast Tomography and Tumor Aggressiveness Assessment

DTIC Science & Technology

2012-07-01

c) Raw Image 11 The entrance face of the slab sample (source plane) was illuminated by a 100-mW 790-nm diode laser beam. The multi-source...schematically shown in Figure 6. A 10mW 785 nm diode laser beam was used to illuminate the first sample, while a 100mW 785 nm diode laser beam was used for the...signal transmitting narrow-band filter; TS = translation stage; CCD = charge cou- pled device; and PC = computer. Continuous wave 790-nm diode laser

Investigation of Diode Pumped Alkali Laser Atmospheric Transmission Using Tunable Diode Laser Absorption Spectroscopy

DTIC Science & Technology

2012-09-01

atmosphere”. Applied Physics B: Lasers and Optics, 82(1):133–140, 2006. 11. Barrass, S., Y. Grard, R.J. Holdsworth, and P.A. Martin . “Near-infrared tun...15. Brown, M. S., S. Williams, C. D. Lindstrom , and D. L. Barone. Progress in Applying Tunable Diode Laser Absorption Spectroscopy to Scramjet

700 W blue fiber-coupled diode-laser emitting at 450 nm

NASA Astrophysics Data System (ADS)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

Endoluminal laser delivery mode and wavelength effects on varicose veins in an ex vivo model.

PubMed

Massaki, Ane B M N; Kiripolsky, Monika G; Detwiler, Susan P; Goldman, Mitchel P

2013-02-01

Endovenous laser ablation (EVLA) has been shown to be effective for the elimination of saphenous veins and associated reflux. Mechanism is known to be heat related, but precise way in which heat causes vein ablation is not completely known. This study aimed to determine the effects of various endovenous laser wavelengths and delivery modes on ex vivo human vein both macroscopically and microscopically. We also evaluated whether protected-tip fibers, consisting of prototype silica fibers with a metal tube over the distal end, reduced vein wall perforations compared with non-protected-tip fibers. An ex vivo EVLA model with human veins harvested during ambulatory phlebectomy procedures was used. Six laser fiber combinations were tested: 810 nm continuous wave (CW) diode laser with a flat tip fiber, 810 CW diode laser with a protected tip fiber, 1,320 nm pulsed Nd:YAG laser, 1,310 nm CW diode laser, 1,470 nm CW diode laser, and 2,100 nm pulsed Ho:YAG laser. Perforation or full thickness necrosis of a portion of the vein wall was observed in 5/11 (45%), 0/11 (0%), 3/22 (14%), 7/11 (64%), 4/6 (67%), and 5/10 (50%) of cross-sections of veins treated with the 810 nm CW diode laser with a flat tip fiber, the 810 CW diode laser with a protected tip fiber, the 1,320 nm pulsed Nd:YAG laser, the 1,310 nm CW diode laser, the 1,470 nm CW diode laser, and the 2,100 nm pulsed Ho:YAG laser, respectively. Our results have shown that the delivery mode, pulsed Nd:YAG versus CW, may be just as important as the wavelength. Therefore, the 1,310 nm CW laser may not be equivalent to the 1,320 nm pulsed laser. In addition, protected 810 nm fibers may be less likely to yield wall perforations than their non-protected counterparts. Copyright © 2012 Wiley Periodicals, Inc.

Three Hundred Patients Treated with Ultrapulsed 980 nm Diode Laser for Skin Disorders

PubMed Central

Wollina, Uwe

2016-01-01

The use of lasers in skin diseases is quite common. In contrast to other laser types, medical literature about 980 nm ultrapulsed diode laser is sparse in dermatology. Herein, we report the use of ultrapulsed diode 980 nm laser in 300 patients with vascular lesions, cysts and pseudocysts, infectious disease, and malignant tumors. This laser is a versatile tool with excellent safety and efficacy in the hands of the experienced user. PMID:27688445

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, B.L.

1998-10-27

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver > 4kW/cm{sup 2} of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources. 13 figs.

Enhanced vbasis laser diode package

DOEpatents

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy

NASA Astrophysics Data System (ADS)

Ankudinov, A.; Titkov, A. N.; Evtikhiev, Vadim P.; Kotelnikov, Eugeny Y.; Bazhenov, N.; Zegrya, Georgy G.; Huhtinen, H.; Laiho, R.

2003-06-01

One of the important factors that restricts the power limit of semiconductor lasers is a catastrophic optical mirror damage. This process is significantly suppressed through decreasing the optical power density due to its redistribution over the broad transverse waveguide (BW). Recently it was shown that record-breaking values of the quasicontinuous and continuous-wave (QWC and CW) output power for 100-μm-wide-aperture devices can be achieved by incorporating a broad transverse waveguide into 0.97 μm emitting Al-free InGaAs(P)/InGaP/GaAs and Al-containing InGaAs/AlGaAs/GaAs separate confinement heterostructure quantum-well lasers (SCH-QWL). Another important factor limiting the CW output power is the Joule overheating of a laser diode due to an extra serial resistance. Traditionally, a decrease in the resistance is achieved by development of the contacts, whereas a voltage distribution across the device structure is not analyzed properly. At high operating currents the applied voltage can drop not only across the n-p-junction, but also at certain additional regions of the laser structure depending on a particular design of the device. Electrostatic force microscopy (EFM) provides a very promising method to study the voltage distribution across an operating device with a nanometer space resolution. An application of EFM for diagnostics of III-V laser diodes without and under applied biases have been recently demonstrated. However, the most interesting range of the biases, the lazing regime, has not been studied yet.

Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, R.J.; Benett, W.J.; Mills, S.T.

1997-04-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-05-01

The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications such as underwater communications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

The advances and characteristics of high-power diode laser materials processing

NASA Astrophysics Data System (ADS)

Li, Lin

2000-10-01

This paper presents a review of the direct applications of high-power diode lasers for materials processing including soldering, surface modification (hardening, cladding, glazing and wetting modifications), welding, scribing, sheet metal bending, marking, engraving, paint stripping, powder sintering, synthesis, brazing and machining. The specific advantages and disadvantages of diode laser materials processing are compared with CO 2, Nd:YAG and excimer lasers. An effort is made to identify the fundamental differences in their beam/material interaction characteristics and materials behaviour. Also an appraisal of the future prospects of the high-power diode lasers for materials processing is given.

Influence of high power 405 nm multi-mode and single-mode diode laser light on the long-term stability of fused silica fibers

NASA Astrophysics Data System (ADS)

Gonschior, C. P.; Klein, K.-F.; Sun, T.; Grattan, K. T. V.

2012-04-01

As the demand for high power fiber-coupled violet laser systems increases existing problems remain. The typical power of commercially available diode lasers around 400 nm is in the order of 100 to 300 mW, depending on the type of laser. But in combination with the small core of single-mode fibers reduced spot sizes are needed for good coupling efficiencies, leading to power densities in the MW/cm2 range. We investigated the influence of 405 nm laser light irradiation on different fused silica fibers and differently treated end-faces. The effect of glued-and-polished, cleaved-and-clamped and of cleaved-and-fusion-arc-treated fiber end-faces on the damage rate and behavior are presented. In addition, effects in the deep ultra-violet were determined spectrally using newest spectrometer technology, allowing the measurement of color centers around 200 nm in small core fibers. Periodic surface structures were found on the proximal end-faces and were investigated concerning generation control parameters and composition. The used fiber types range from low-mode fiber to single-mode and polarization-maintaining fiber. For this investigation 405 nm single-mode or multi-mode diode lasers with 150 mW or 300 mW, respectively, were employed.

Passive Optical Locking Techniques for Diode Lasers

NASA Astrophysics Data System (ADS)

Zhang, Quan

1995-01-01

Most current diode-based nonlinear frequency converters utilize electronic frequency locking techniques. However, this type of locking technique typically involves very complex electronics, and suffers the 'power-drop' problem. This dissertation is devoted to the development of an all-optical passive locking technique that locks the diode laser frequency to the external cavity resonance stably without using any kind of electronic servo. The amplitude noise problem associated with the strong optical locking has been studied. Single-mode operation of a passively locked single-stripe diode with an amplitude stability better than 1% has been achieved. This passive optical locking technique applies to broad-area diodes as well as single-stripe diodes, and can be easily used to generate blue light. A schematic of a milliwatt level blue laser based on the single-stripe diode locking technique has been proposed. A 120 mW 467 nm blue laser has been built using the tapered amplifier locking technique. In addition to diode-based blue lasers, this passive locking technique has applications in nonlinear frequency conversions, resonant spectroscopy, particle counter devices, telecommunications, and medical devices.

VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

DTIC Science & Technology

2017-03-01

need of high efficiency with high temperature operation eliminates essentially all laser diode technologies except VCSELs. Therefore scaling of the...CW laser diode and separate modulator. Lower diagram circuitry shows the case for a DML VCSEL. The small gain volume and high speed modulation...speed of the modulator. However the CW laser that is needed for the modulator appears to create a technological roadblock for laser diode platforms

A comparative evaluation: Oral leukoplakia surgical management using diode laser, CO2 laser, and cryosurgery.

PubMed

Natekar, Madhukar; Raghuveer, Hosahallli-Puttaiah; Rayapati, Dilip-Kumar; Shobha, Eshwara-Singh; Prashanth, Nagesh-Tavane; Rangan, Vinod; Panicker, Archana G

2017-06-01

The comparatively evaluate the three surgical treatment modalities namely cryosurgery, diode and CO2 laser surgery in terms of healing outcomes on the day of surgery, first and second week post operatively and recurrence at the end of 18 months was assessed. Thirty selected patients were divided randomly into three groups. Each group comprising of ten patients were subjected to one of the three modalities of treatment namely cryosurgery, diode laser or CO2 laser surgery for ablation of OL. Obtained data was analyzed using mainly using Chi-square and Anova tests. Study showed statistical significant differences (p > 0.05) for evaluation parameters like pain, edema and scar. The parameters like infection, recurrence, bleeding showed no statistical significance. Pain was significantly higher in CO2 laser surgery group as compared with diode laser group. There was no recurrence observed at the end of the 6 months follow up period in all the three study groups. Observations from the study highlights that all three surgical modalities used in this study were effective for treatment of OL, and the overall summation of the results of the study showed that laser therapy (CO2 and Diode) seems to offer better clinically significant results than cryotherapy. Key words: Oral premalignant lesion, leukoplakia, cryosurgery, CO2 laser surgery, diode laser surgery.

Near-field phase-change recording using a GaN laser diode

NASA Astrophysics Data System (ADS)

Kishima, Koichiro; Ichimura, Isao; Yamamoto, Kenji; Osato, Kiyoshi; Kuroda, Yuji; Iida, Atsushi; Saito, Kimihiro

2000-09-01

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

High-speed non-contact measuring apparatus for gauging the thickness of moving sheet material

DOEpatents

Grann, Eric B.; Holcomb, David E.

2000-01-01

An optical measurement apparatus is provided for measuring the thickness of a moving sheet material (18). The apparatus has a pair of optical measurement systems (21, 31) attached to opposing surfaces (14, 16) of a rigid support structure (10). A pair of high-power laser diodes (20,30) and a pair of photodetector arrays (22,32) are attached to the opposing surfaces. Light emitted from the laser diodes is reflected off of the sheet material surfaces (17, 19) and received by the respective photodetector arrays. An associated method for implementing the apparatus is also provided.

Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers

NASA Astrophysics Data System (ADS)

Rieprich, J.; Winterfeldt, M.; Tomm, J.; Kernke, R.; Crump, P.

2017-02-01

The lateral beam parameter product, BPPlat, and resulting lateral brightness of GaAs-based high-power broad-area diode lasers is strongly influenced by the thermal lens profile. We present latest progress in efforts using FEM simulation to interpret how variation in chip construction influences the thermal lens profile, itself determined experimentally using thermography (thermal camera). Important factors are shown to include the vertical (epitaxial) structure, the properties of the submount and the transition between chip and submount, whose behavior is shown to be consistent with the presence of a significant thermal barrier.

Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

NASA Astrophysics Data System (ADS)

Reinl, S.

Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

Diode laser operating on an atomic transition limited by an isotope ⁸⁷Rb Faraday filter at 780 nm.

PubMed

Tao, Zhiming; Hong, Yelong; Luo, Bin; Chen, Jingbiao; Guo, Hong

2015-09-15

We demonstrate an extended cavity Faraday laser system using an antireflection-coated laser diode as the gain medium and the isotope (87)Rb Faraday anomalous dispersion optical filter (FADOF) as the frequency selective device. Using this method, the laser wavelength works stably at the highest transmission peak of the isotope (87)Rb FADOF over the laser diode current from 55 to 140 mA and the temperature from 15°C to 35°C. Neither the current nor the temperature of the laser diode has significant influence on the output frequency. Compared with previous extended cavity laser systems operating at frequencies irrelevant to spectacular atomic transition lines, the laser system realized here provides a stable laser source with the frequency operating on atomic transitions for many practical applications.

One joule per Q-switched pulse diode-pumped laser

NASA Technical Reports Server (NTRS)

Holder, Lonnie E.; Kennedy, Chandler; Long, Larry; Dube, George

1992-01-01

Q-switched 1-J output has been achieved from diode-pumped zig-zag Nd:YAG slabs in an oscillator-amplifier configuration. The oscillator was single transverse and longitudinal model. This laser set records for Q-switched energy per pulse, and for average power from a diode-pumped laser. The laser was constructed in a rugged configuration suitable for routine laboratory use.

Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

NASA Astrophysics Data System (ADS)

Talla Mbé, Jimmi Hervé; Woafo, Paul

2018-03-01

We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

Wavelength-Agile External-Cavity Diode Laser for DWDM

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey S.; Bomse, David S.

2006-01-01

A prototype external-cavity diode laser (ECDL) has been developed for communication systems utilizing dense wavelength- division multiplexing (DWDM). This ECDL is an updated version of the ECDL reported in Wavelength-Agile External- Cavity Diode Laser (LEW-17090), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 14a. To recapitulate: The wavelength-agile ECDL combines the stability of an external-cavity laser with the wavelength agility of a diode laser. Wavelength is modulated by modulating the injection current of the diode-laser gain element. The external cavity is a Littman-Metcalf resonator, in which the zeroth-order output from a diffraction grating is used as the laser output and the first-order-diffracted light is retro-reflected by a cavity feedback mirror, which establishes one end of the resonator. The other end of the resonator is the output surface of a Fabry-Perot resonator that constitutes the diode-laser gain element. Wavelength is selected by choosing the angle of the diffracted return beam, as determined by position of the feedback mirror. The present wavelength-agile ECDL is distinguished by design details that enable coverage of all 60 channels, separated by 100-GHz frequency intervals, that are specified in DWDM standards.

QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

EPA Science Inventory

A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

Comparison between sequentional treatment with diode and alexandrite lasers versus alexandrite laser alone in the treatment of hirsutism.

PubMed

Nilforoushzadeh, Mohammad Ali; Naieni, Farahnaz Fatemi; Siadat, Amir Hossein; Rad, Leila

2011-11-01

Laser systems that are commonly used for the treatment of hirsutism include the ruby laser (694 nm), the diode laser (800 nm), the alexandrite laser (755 nm) and the Nd:YAG laser (1084 nm). The diode laser and alexandrite laser are considered effective in treatment of hirsutism in dark-skinned patients. The response of hairs to these laser systems is variable and not complete. In this study, we compared the efficacy of these two laser systems for permanent hair removal. This was a randomized, controlled clinical trial that was performed with women of the age range 15-45 years old. After obtaining informed consent, the samples were randomized into two groups using random allocation software. The first group was treated with alexandrite laser alone (four sessions, two months apart). The second group was treated sequentially with diode laser for the first two sessions and alexandrite laser for the next two sessions. Overall, 111 patients (57 patients in the alexandrite laser group and 54 patients in the sequential diode-alexandrite laser group) were evaluated. There was no significant difference regarding mean of hair reduction between the two groups during the courses of treatment. Except for the first session, there was no significant difference regarding percent of patient satisfaction between the two groups (P value >0.05). Comparison between the two groups showed no significant difference one month, three months and six months after the last treatment (P value >0.05). Regarding the results of our study, there is no significant difference between sequential treatment with diode and alexandrite lasers versus alexandrite laser alone in the treatment of hirsutism. We suggest that in further studies, the efficacy of sequential treatment with other laser systems is evaluated against single treatment methods.

303 nm continuous wave ultraviolet laser generated by intracavity frequency-doubling of diode-pumped Pr3+:LiYF4 laser

NASA Astrophysics Data System (ADS)

Zhu, Pengfei; Zhang, Chaomin; Zhu, Kun; Ping, Yunxia; Song, Pei; Sun, Xiaohui; Wang, Fuxin; Yao, Yi

2018-03-01

We demonstrate an efficient and compact ultraviolet laser at 303 nm generated by intracavity frequency doubling of a continuous wave (CW) laser diode-pumped Pr3+:YLiF4 laser at 607 nm. A cesium lithium borate (CLBO) crystal, cut for critical type I phase matching at room temperature, is used for second-harmonic generation (SHG) of the fundamental laser. By using an InGaN laser diode array emitting at 444.3 nm with a maximum incident power of 10 W, as high as 68 mW of CW output power at 303 nm is achieved. The output power stability in 4 h is better than 2.85%. To the best of our knowledge, this is high efficient UV laser generated by frequency doubling of an InGaN laser diode array pumped Pr3+:YLiF4 laser.

Stackable air-cooled heatsinks for diode lasers

NASA Astrophysics Data System (ADS)

Crum, T. R.; Harrison, J.; Srinivasan, R.; Miller, R. L.

2007-02-01

Micro-channel heatsink assemblies made from bonding multi-layered etched metal sheets are commercially available and are often used for removing the high waste heat loads generated by the operation of diode-laser bars. Typically, a diode-laser bar is bonded onto a micro-channel (also known as mini-channel) heatsink then stacked in an array to create compact high power diode-laser sources for a multitude of applications. Under normal operation, the diode-laser waste heat is removed by passing coolant (typically de-ionized water) through the channels of the heatsink. Because of this, the heatsink internal structure, including path length and overall channel size, is dictated by the liquid coolant properties. Due to the material characteristics of these conductive heatsinks, and the necessary electrically serial stacking geometry, there are several restrictions imparted on the coolant liquid to maintain performance and lifetime. Such systems require carefully monitored and conductive limited de-ionized water, as well as require stable pH levels, and suitable particle filtration. These required coolant systems are either stand alone, or heat exchangers are typically costly and heavy restricting certain applications where minimal weight to power ratios are desired. In this paper, we will baseline the existing water cooled Spectra-Physics Monsoon TM heatsink technology utilizing compressed air, and demonstrate a novel modular stackable heatsink concept for use with gaseous fluids that, in some applications may replace the existing commercially available water-cooled heatsink technology. We will explain the various benefits of utilizing air while maintaining mechanical form factors and packing densities. We will also show thermal-fluid modeling results and predictions as well as operational performance curves for efficiency and power and compare these data to the existing commercially available technology.

A digital optical phase-locked loop for diode lasers based on field programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu Zhouxiang; Zhang Xian; Huang Kaikai

2012-09-15

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat notemore » line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.« less

Diode-Pumped Organo-Lead Halide Perovskite Lasing in a Metal-Clad Distributed Feedback Resonator.

PubMed

Jia, Yufei; Kerner, Ross A; Grede, Alex J; Brigeman, Alyssa N; Rand, Barry P; Giebink, Noel C

2016-07-13

Organic-inorganic lead halide perovskite semiconductors have recently reignited the prospect of a tunable, solution-processed diode laser, which has the potential to impact a wide range of optoelectronic applications. Here, we demonstrate a metal-clad, second-order distributed feedback methylammonium lead iodide perovskite laser that marks a significant step toward this goal. Optically pumping this device with an InGaN diode laser at low temperature, we achieve lasing above a threshold pump intensity of 5 kW/cm(2) for durations up to ∼25 ns at repetition rates exceeding 2 MHz. We show that the lasing duration is not limited by thermal runaway and propose instead that lasing ceases under continuous pumping due to a photoinduced structural change in the perovskite that reduces the gain on a submicrosecond time scale. Our results indicate that the architecture demonstrated here could provide the foundation for electrically pumped lasing with a threshold current density Jth < 5 kA/cm(2) under sub-20 ns pulsed drive.

Internal optical losses in very thin CW heterojunction laser diodes

NASA Technical Reports Server (NTRS)

Butler, J. K.; Kressel, H.; Ladany, I.

1975-01-01

Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

InAs(PSb)-based ``W'' quantum well laser diodes emitting near 3.3 μm

NASA Astrophysics Data System (ADS)

Joullié, A.; Skouri, E. M.; Garcia, M.; Grech, P.; Wilk, A.; Christol, P.; Baranov, A. N.; Behres, A.; Kluth, J.; Stein, A.; Heime, K.; Heuken, M.; Rushworth, S.; Hulicius, E.; Simecek, T.

2000-05-01

Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical structures having n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 μm, with a lowest threshold current density of 120 A/cm2 at 90 K, and an output power efficiency of 31 mW/facet/A. The characteristic temperature was 35 K.

CO2 and diode laser for excisional biopsies of oral mucosal lesions. A pilot study evaluating clinical and histopathological parameters.

PubMed

Suter, Valérie G A; Altermatt, Hans Jörg; Sendi, Pedram; Mettraux, Gérald; Bornstein, Michael M

2010-01-01

The present pilot study evaluates the histopathological characteristics and suitability of CO2 and diode lasers for performing excisional biopsies in the buccal mucosa with special emphasis on the extent of the thermal damage zone created. 15 patients agreed to undergo surgical removal of their fibrous hyperplasias with a laser. These patients were randomly assigned to one diode or two CO2 laser groups. The CO2 laser was used in a continuous wave mode (cw) with a power of 5 W (Watts), and in a pulsed char-free mode (cf). Power settings for the diode laser were 5.12 W in a pulsed mode. The thermal damage zone of the three lasers and intraoperative and postoperative complications were assessed and compared. The collateral thermal damage zone on the borders of the excisional biopsies was significantly smaller with the CO, laser for both settings tested compared to the diode laser regarding values in pm or histopathological index scores. The only intraoperative complication encountered was bleeding, which had to be controlled with electrocauterization. No postoperative complications occurred in any of the three groups. The CO2 laser seems to be appropriate for excisional biopsies of benign oral mucosal lesions. The CO2 laser offers clear advantages in terms of smaller thermal damage zones over the diode laser. More study participants are needed to demonstrate potential differences between the two different CO2 laser settings tested.

Unclassified Publications of Lincoln Laboratory, 1 January-31 December 1987. Volume 13

DTIC Science & Technology

1987-12-31

Visible-Laser Photochemical Etching of Cr , Mo, and W 5901 High-Speed Electronic Beam Steering Using Injection Locking of a Laser-Diode Array...of High- Power Broad-Area Diode Lasers High-Temperature Point-Contact Transistors and Schottky Diodes Formed on Synthetic Boron- Doped Diamond...SPEECHES MS No. 593IB C02 Laser Radar 6550B Recent Advances in Transition-Metal- Doped Lasers 6714D Radiation Damage in Dry

Diode-laser frequency stabilization based on the resonant Faraday effect

NASA Technical Reports Server (NTRS)

Wanninger, P.; Valdez, E. C.; Shay, T. M.

1992-01-01

The authors present the results of a method for frequency stabilizing laser diodes based on the resonant Faraday effects. A Faraday cell in conjunction with a polarizer crossed with respect to the polarization of the laser diode comprises the intracavity frequency selective element. In this arrangement, a laser pull-in range of 9 A was measured, and the laser operated at a single frequency with a linewidth less than 6 MHz.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1991-01-01

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

Transcanalicular Diode Laser-assisted Dacryocystorhinostomy for the Treatment of Primary Acquired Nasolacrimal Duct Obstruction.

PubMed

Mor, Joel M; Guo, Yongwei; Koch, Konrad R; Heindl, Ludwig M

2017-10-13

Today's gold standard in the treatment of infrasaccal primary acquired nasolacrimal duct obstruction (PANDO) is external dacryocystorhinostomy (DCR), a relatively invasive procedure that can be performed after failure of recanalizing treatments. However, with progress in the field of diode laser technology, new approaches have emerged. Laser-assisted transcanalicular DCR with subsequent bicanalicular silicon intubation is a new option showing great promise as a viable minimally invasive procedure. Under permanent endoscopic visual control from the nasal cavity, a diode laser fiber is inserted into the lacrimal sac and laser energy is applied to create a bony ostium between the lacrimal sac and the nasal cavity. Since no skin incision needs to be made, advantages of this method comprise the sparing of the skin as well as the medial palpebral structures and the physiological palpebral-canalicular pump mechanism. The duration of surgery as well as reconvalescence is generally shorter than with external DCR. Complications include silicon tube prolapse, mild swelling and, rarely, canalicular infection and thermal injury. One-year functional success rates, defined as complete resolution of symptoms and ostium patency, are high, yet still range behind those of external DCR. However, secondary external DCR after failure of laser-assisted DCR can be performed without difficulty. Thus, laser-assisted transcanalicular DCR is a valid option that should be considered as a second-step procedure after failure of recanalization procedures and before external DCR.

Interband Cascade Laser Photon Noise

DTIC Science & Technology

2009-09-01

bias , electrons that are injected into the InAs QW, undergo radiative or non-radiative interband transitions into the GaInSb QW, tunnel into the...to the QC laser photon noise is dominant and increases with bias current (18, 19). This is in contrast to interband diode lasers, where spontaneous...adjacent GaSb QW, and then enter the next injection region by interband tunneling . The laser structures were grown by molecular-beam- epitaxy and processed

Next generation diode lasers with enhanced brightness

NASA Astrophysics Data System (ADS)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

Low-Coherence light source design for ESPI in-plane displacement measurements

NASA Astrophysics Data System (ADS)

Heikkinen, J. J.; Schajer, G. S.

2018-01-01

The ESPI method for surface deformation measurements requires the use of a light source with high coherence length to accommodate the optical path length differences present in the apparatus. Such high-coherence lasers, however, are typically large, delicate and costly. Laser diodes, on the other hand, are compact, mechanically robust and inexpensive, but unfortunately they have short coherence length. The present work aims to enable the use of a laser diode as an illumination source by equalizing the path lengths within an ESPI interferometer. This is done by using a reflection type diffraction grating to compensate for the path length differences. The high optical power efficiency of such diffraction gratings allows the use of much lower optical power than in previous interferometer designs using transmission gratings. The proposed concept was experimentally investigated by doing in-plane ESPI measurements using a high-coherence single longitudinal mode (SLM) laser, a laser diode and then a laser diode with path length optimization. The results demonstrated the limitations of using an uncompensated laser diode. They then showed the effectiveness of adding a reflection type diffraction grating to equalize the interferometer path lengths. This addition enabled the laser diode to produce high measurement quality across the entire field of view, rivaling although not quite equaling the performance of a high-coherence SLM laser source.

Cylindrical microlens with an internally reflecting surface and a method of fabrication

DOEpatents

Beach, Raymond J.; Freitas, Barry L.

2004-03-23

A fast (high numerical aperture) cylindrical microlens, which includes an internally reflective surface, that functions to deviate the direction of the light that enters the lens from its original propagation direction is employed in optically conditioning laser diodes, laser diode arrays and laser diode bars.

A Cylindrical Microlens With An Internally Reflective Surface And A Method Of Fabrication

DOEpatents

Beach, Raymond J.; Freitas, Barry L.

2005-09-27

A fast (high numerical aperture) cylindrical microlens, which includes an internally reflective surface, that functions to deviate the direction of the light that enters the lens from its original propagation direction is employed in optically conditioning laser diodes, laser diode arrays and laser diode bars.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

970-nm ridge waveguide diode laser bars for high power DWBC systems

NASA Astrophysics Data System (ADS)

Wilkens, Martin; Erbert, Götz; Wenzel, Hans; Knigge, Andrea; Crump, Paul; Maaßdorf, Andre; Fricke, Jörg; Ressel, Peter; Strohmaier, Stephan; Schmidt, Berthold; Tränkle, Günther

2018-02-01

de lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.

Comparison of Refractive Error Changes in Retinopathy of Prematurity Patients Treated with Diode and Red Lasers.

PubMed

Roohipoor, Ramak; Karkhaneh, Reza; Riazi Esfahani, Mohammad; Alipour, Fateme; Haghighat, Mahtab; Ebrahimiadib, Nazanin; Zarei, Mohammad; Mehrdad, Ramin

2016-01-01

To compare refractive error changes in retinopathy of prematurity (ROP) patients treated with diode and red lasers. A randomized double-masked clinical trial was performed, and infants with threshold or prethreshold type 1 ROP were assigned to red or diode laser groups. Gestational age, birth weight, pretreatment cycloplegic refraction, time of treatment, disease stage, zone and disease severity were recorded. Patients received either red or diode laser treatment and were regularly followed up for retina assessment and refraction. The information at month 12 of corrected age was considered for comparison. One hundred and fifty eyes of 75 infants were enrolled in the study. Seventy-four eyes received diode and 76 red laser therapy. The mean gestational age and birth weight of the infants were 28.6 ± 3.2 weeks and 1,441 ± 491 g, respectively. The mean baseline refractive error was +2.3 ± 1.7 dpt. Posttreatment refraction showed a significant myopic shift (mean 2.6 ± 2.0 dpt) with significant difference between the two groups (p < 0.001). There was a greater myopic shift among children with zone I and diode laser treatment (mean 6.00 dpt) and a lesser shift among children with zone II and red laser treatment (mean 1.12 dpt). The linear regression model, using the generalized estimating equation method, showed that the type of laser used has a significant effect on myopic shift even after adjustment for other variables. Myopic shift in laser-treated ROP patients is related to the type of laser used and the involved zone. Red laser seems to cause less myopic shift than diode laser, and those with zone I involvement have a greater myopic shift than those with ROP in zone II. © 2016 S. Karger AG, Basel.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

NASA Astrophysics Data System (ADS)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of < 0.5 nm and a wavelength stability of better than 250 MHz over one hour. Dense spectral combination with dichroic mirrors and narrow channel spacing allows us to combine multiple wavelength channels, resulting in a 2 kW laser module with a BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

Qualification Testing of Laser Diode Pump Arrays for a Space-Based 2-micron Coherent Doppler Lidar

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Singh, Upendra N.; Kavaya, Michael J.

2007-01-01

The 2-micron thulium and holmium-based lasers being considered as the transmitter source for space-based coherent Doppler lidar require high power laser diode pump arrays operating in a long pulse regime of about 1 msec. Operating laser diode arrays over such long pulses drastically impact their useful lifetime due to the excessive localized heating and substantial pulse-to-pulse thermal cycling of their active regions. This paper describes the long pulse performance of laser diode arrays and their critical thermal characteristics. A viable approach is then offered that allows for determining the optimum operational parameters leading to the maximum attainable lifetime.

Nitride-based stacked laser diodes with a tunnel junction

NASA Astrophysics Data System (ADS)

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu; Takagi, Yasufumi; Maeda, Junya; Yoshida, Harumasa

2018-01-01

We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.

Single mode wavelength control of modulated AlGaAs lasers with external and internal etalon feedback

NASA Technical Reports Server (NTRS)

Maynard, William L.

1989-01-01

Single mode lasing without mode hops has been obtained for VSIS and CSP laser diodes with an external etalon attached to the laser's front facet for up to an 8 C range CW and a 4 C range pulsed, with .07 nm/C tuning. Tests of thin tapered-thickness (TTT) laser diodes show CW and pulsed single mode lasing over 10 C and 2 C ranges, respectively, with .08 nm/C tuning. An analysis of the TTT structure reveals the equivalent of an internal etalon. The time-resolved pulsed behavior for both types of lasers show single mode lasing within the proper temperature ranges with minor modes present only early in the optical pulse, if at all. The external etalon produces noticeable interference fringes in the farfield pattern, while those of the TTT lasers are smooth. Ongoing CW lifetest results indicate stability to within one longitudinal mode after a few hundred hours of operation, along with at least several thousand hours lifetime.

Effect of radiant heat on conventional glass ionomer cements during setting by using a blue light diode laser system (445 nm).

PubMed

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2017-04-01

The aim of this in vitro study was to evaluate the effect of radiant heat on surface hardness of three conventional glass ionomer cements (GICs) by using a blue diode laser system (445 nm) and a light-emitting diode (LED) unit. Additionally, the safety of the laser treatment was evaluated. Thirty disk-shaped specimens were prepared of each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: group 1 was the control group of the study; in group 2, the specimens were irradiated for 60 s at the top surface using a LED light-curing unit; and in group 3, the specimens were irradiated for 60 s at the top surface using a blue light diode laser system (445 nm). Statistical analysis was performed using one-way ANOVA and Tukey post-hoc tests at a level of significance of a = 0.05. Radiant heat treatments, with both laser and LED devices, increased surface hardness (p < 0.05) but in different extent. Blue diode laser treatment was seemed to be more effective compared to LED treatment. There were no alterations in surface morphology or chemical composition after laser treatment. The tested radiant heat treatment with a blue diode laser may be advantageous for the longevity of GIC restorations. The safety of the use of blue diode laser for this application was confirmed.

Comparing the 810nm diode laser with conventional surgery in orthodontic soft tissue procedures.

PubMed

Ize-Iyamu, I N; Saheeb, B D; Edetanlen, B E

2013-09-01

To compare the use of the 810nm diode laser with conventional surgery in the management of soft tissue mucogingival problems associated with orthodontic treatment. Orthodontic patients requiring different soft tissue surgical procedures were randomly assigned to receive conventional surgery or soft tissue diode laser, (wavelength 810 nm). Parameters documented include the type of anaesthesia used, intra and post operative pain, bleeding, the use of scalpel and sutures. The chi-squared test was used to test for significance at 95% confidence level. Probability values (p-values) less than 0.05 were regarded as significant. Only 2(16.7%) of the procedures carried out with the soft tissue laser required infiltration anaesthesia compared to 10 (90.9%) with conventional surgery and this was significant (P<0.001). Post operative pain was significantly reduced in all cases treated with the diode laser (P<0.001). There was also a significant difference (P<0.05) in post operative bleeding in all cases treated with the diode laser. No sutures were used in all soft tissue cases managed with the diode laser and this was significant (P<0.001). There was no statistically significant difference in treatment time in the use of the laser compared with conventional surgery. Orthodontic patients treated with the diode laser required less infiltration anaesthesia, had reduced bleeding during and after surgery, rapid postoperative haemostasis, elimination of the need for sutures and an improved postoperative comfort and healing.

Comparison of a novel high-power blue diode laser (λ=442 nm) with Ho:YAG (λ=2100 nm), Tm fiber (λ=1940 nm), and KTP (λ=532 nm) lasers for soft tissue ablation

NASA Astrophysics Data System (ADS)

Vinnichenko, Victoriya; Kovalenko, Anastasiya; Arkhipova, Valeriya; Yaroslavsky, Ilya; Altshuler, Gregory; Gapontsev, Valentin

2018-02-01

Three lasers were directly compared, including the Ho:YAG laser (λ = 2100 nm), Tm fiber laser (λ = 1940 nm) operating in 3 different modes (CW, regular pulse, and super pulse), and blue diode laser (λ = 442 nm) for vaporization and coagulation efficiency for treating blood-rich soft tissues, ex vivo, in a porcine kidney model at quasi-contact cutting in water. In addition, experimental results were compared with published data on performance of KTP laser (λ = 532 nm) at similar experimental settings (Power = 60 W and cutting speed = 2 mm/s). Tm fiber laser in pulsed mode and blue laser produced highest vaporization rates of 3.7 and 3.4 mm3/s, respectively. Tm fiber laser (in both CW and pulsed modes) also produced the largest coagulation zone among the laser sources tested. A carbonization zone was observed for Tm fiber laser in CW and pulsed modes, as well as for the blue diode laser. Tm fiber laser in super-pulse mode and Ho:YAG laser both resulted in irregular coagulation zones without carbonization. Comparison with known data for KTP laser revealed that tissue effects of the blue laser are similar to that of the KTP laser. These results suggest that the combination of the two lasers (Tm fiber and blue diode) in one system may achieve high cutting efficiency and optimal coagulation for hemostasis during surgical treatment. Ex vivo testing of the combined system revealed feasibility of this approach. The combination of the CW Tm fiber laser (120W) and the blue diode laser (60W) emitting through a combination tip were compared with CW 120 W Tm fiber laser alone and 120 W Ho:YAG laser. Vaporization rates measured 34, 28, and 6 mm3/s, and coagulation zones measured 0.6, 1.3, and 1.7 mm, respectively. A carbonization zone was only observed with CW Tm fiber laser. The vaporization rate of combined CW Tm fiber laser / blue diode laser was comparable to published data for KTP laser for equivalent total power. Thus, high-power blue diode laser, Tm fiber laser, and their combination may provide an alternative to conventional Ho:YAG and KTP lasers for applications in urology and other surgical fields.

Effect of laser irradiation on crystalline structure of enamel surface during whitening treatment with hydrogen peroxide.

PubMed

Son, Jung-Hyun; An, Ji-Hae; Kim, Byung-Kuk; Hwang, In-Nam; Park, Yeong-Joon; Song, Ho-Jun

2012-11-01

This study is to evaluate the effect of laser activation on the whitening and crystalline structure of enamel surface during whitening treatment with hydrogen peroxide. Bovine teeth were treated with whitening gel containing 35% hydrogen peroxide. A whitening gel was applied on the enamel surface for a period of 5 min, and then irradiated using a diode laser (740 nm) during whitening treatment for 0, 30, 60, 120 and 180s for the GL0-W, GL30-W, GL60-W, GL120-W and GL180-W groups, respectively. The total whitening application time was 30 min for all groups. Laser-irradiated enamel groups showed a similar lightness compared to the GL0-W group. The thickness of porous layer observed on the enamel surface of GL0-W group was decreased by increasing the laser irradiation time. While the Ca and P contents of the GL0-W group were lower than those of the non-whitening treated group (GL0-C), the Ca and P contents of the GL180-W group were similar to those of the GL180-C group. The enamel crystallinity was dramatically decreased by whitening treatment without laser irradiation. However, the decrease of crystallinity was protected by laser irradiation during whitening treatment. Raman measurement verified that laser irradiation could prevent the loss of mineral compositions on enamel and maintain its crystalline structure. The professional whitening treatment with hydrogen peroxide and diode laser activation improves not only the whitening effect but also protects the change of enamel structure compared to the treatment with only gel. Copyright © 2012 Elsevier Ltd. All rights reserved.

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry

PubMed Central

2017-01-01

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples. PMID:28632988

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

PubMed

Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

2017-07-18

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

Application of a 980-nanometer diode laser in neuroendoscopy: a case series.

PubMed

Reis, Rodolfo Casimiro; Teixeira, Manoel Jacobsen; Mancini, Marilia Wellichan; Almeida-Lopes, Luciana; de Oliveira, Matheus Fernandes; Pinto, Fernando Campos Gomes

2016-02-01

Ventricular neuroendoscopy represents an important advance in the treatment of hydrocephalus. High-power (surgical) Nd:YAG laser and low-level laser therapy (using 685-nm-wavelength diode laser) have been used in conjunction with neuroendoscopy with favorable results. This study evaluated the use of surgical 980-nm-wavelength diode laser for the neuroendoscopic treatment of ventricular diseases. Nine patients underwent a neuroendoscopic procedure with 980-nm diode laser. Complications and follow-up were recorded. Three in-hospital postoperative complications were recorded (1 intraventricular hemorrhage and 2 meningitis cases). The remaining 6 patients had symptom improvement after endoscopic surgery and were discharged from the hospital within 24-48 hours after surgery. Patients were followed for an average of 14 months: 1 patient developed meningitis and another died suddenly at home. The other patients did well and were asymptomatic until the last follow-up consultation. The 980-nm diode laser is considered an important therapeutic tool for endoscopic neurological surgeries. This study showed its application in different ventricular diseases.

Electronic safing of a diode laser arm-fire device

NASA Astrophysics Data System (ADS)

Willis, Kenneth E.; Chang, Suk T.

1993-06-01

The paper describes a rocket motor arm-fire device which uses a diode laser protected from unintentional function with a specially designed RF frequency attenuating coupler (RFAC). The RFAC transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit, and the pyrotechnic from all electromagnetic and electrostatic hazards. Diagrams of the diode laser arm-fire device are presented together with a diagram illustrating the RFAC principle of operation.

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser.

PubMed

Liu, Ying; Gao, Jie; Gao, Yan; Xu, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm(2); Group B: 2 W/CW (continuous mode), 166 J/cm(2); Group C: 3W/CW, 250 J/cm(2); and Group D: 4W/CW, 333 J/cm(2). Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm(2); and Group F: 2.0 W/CW, 166 J/cm(2). The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm(2)) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue.

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser

PubMed Central

Liu, Ying; Gao, Jie; Gao, Yan; XU, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

Introduction: To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Methods: Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm2; Group B: 2 W/CW (continuous mode), 166 J/cm2; Group C: 3W/CW, 250 J/cm2; and Group D: 4W/CW, 333 J/cm2. Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm2; and Group F: 2.0 W/CW, 166 J/cm2. The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. Results: The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Conclusions: Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm2) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue. PMID:25606318

Respiratory complications after diode-laser-assisted tonsillotomy.

PubMed

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p < 0.01, 95 % CI 1.4780-16.9152) or who suffered from relevant comorbidities (OR = 4.84, p < 0.01, 95 % CI 1.5202-15.4091). Moreover, a diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p < 0.01, 95 % CI 1.3924-8.5602). Postoperative respiratory complications should not be underestimated in children with sleep-disordered breathing (SDB). Therefore, children with SDB, children with comorbidities or children younger than 3 years should be considered "at risk" and children with confirmed moderate to severe OSAS should be referred to a PICU following diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

Theoretical study on the thermal and optical features of a diode side-pumped alkali laser

NASA Astrophysics Data System (ADS)

Han, Juhong; Liu, Xiaoxu; Wang, Hongyuan; Cai, He; An, Guofei; Zhang, Wei; Wang, You

2018-03-01

As one of the most hopeful candidates to achieve high power performances, a diode-pumped alkali laser (DPAL) has attracted a lot of attention in the last decade. Comparing with a diode end-pumped alkali laser (DEPAL), a diode side-pumped alkali laser (DSPAL) has great potentiality to realize an even-higher output of alkali lasers. However, there are few related researching studies concern DSPAL. In this paper, we introduce a theoretical model to investigate the physical features of a double-directions side-pumped alkali laser. The distributions of the population density, temperature, and absorption power at the cross section of a vapor cell are systematically studied. The analyses should be valuable for design of a steady high-powered DPAL.

Update on the use of diode laser in the management of benign prostate obstruction in 2014.

PubMed

Lusuardi, Lukas; Mitterberger, Michael; Hruby, Stephan; Kunit, Thomas; Kloss, Birgit; Engelhardt, Paul F; Sieberer, Manuela; Janetschek, Günter

2015-04-01

To determine the status quo in respect of various diode lasers and present the techniques in use, their results and complications. We assess how these compare with transurethral resection of the prostate and other types of laser in randomized controlled trials (RCTs). When adequate RCTs were not available, case studies and reports were evaluated. Laser for the treatment of benign prostatic hyperplasia (BPH) has aroused the interest and curiosity of urologists as well as patients. The patient associates the term laser with a successful and modern procedure. The journey that started with coagulative necrosis of prostatic adenoma based on neodymium: yttrium-aluminum-garnet (Nd:YAG) laser has culminated in endoscopic "enucleation" with holmium laser. Diode laser is being used in urology for about 10 years now. Various techniques have been employed to relieve bladder outlet obstruction due to BPH. The diode laser scenario is marked by a diversity of surgical techniques and wavelengths. We summarize the current published literature in respect of functional results and complications. More randomized controlled studies are needed to determine the position and the ideal technique of diode laser treatment for BPH.

Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

NASA Astrophysics Data System (ADS)

Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.

2018-02-01

Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

Investigation of single lateral mode for 852nm diode lasers with ridge waveguide design

NASA Astrophysics Data System (ADS)

Liu, Chu; Guan, Baolu; Mi, Guoxin; Liao, Yiru; Liu, Zhenyang; Li, Jianjun; Xu, Chen

2016-11-01

852nm Narrow linewidth lasers can be widely used in the field of ultra-fine spectrum measurement, Cs atomic clock control, satellite and optical fiber communication and so on. Furthermore, the stability of the single lateral mode is a very important condition to guarantee the narrow linewidth lasers. Here we investigate experimentally the influence of the narrow ridge structure and asymmetrical waveguide design on the stability single lateral mode of an 852nm diode laser. According to the waveguide theoretical analysis, ridge mesa etch depth (Δη , related to the refractive index difference of parallel to the junction) and ridge mesa width (the narrower the more control force to low order mode) are the main elements for lateral modes. In this paper, we designed different structures to investigate and verify major factors for lateral mode by experiment, and to confirm our thought. Finally, the 5μm mesa ridge laser, 800nm etch depth, with groove structure obtains excellent steady single lateral mode output by 150mA operating current and 30°C temperature. The optical spectrum FWHM is 0.5nm and side mode suppression ratio is 27dBm with uncoated. The laser with 1mm cavity length showed the threshold current of 50mA, a lasing wavelength of λ = 852.6nm, slope efficiency of above 0.7mW/mA. We accomplished single lateral mode of ridge waveguide edge-emitting lasers which can also be used as a laser source in the ultra-narrow linewidth external cavity laser system.

Tunable diode-laser heterodyne spectrometer for remote observations near 8 microns

NASA Technical Reports Server (NTRS)

Glenar, D.; Kostiuk, T.; Jennings, D. E.; Buhl, D.; Mumma, M. J.

1982-01-01

A diode-laser-based, ultrahigh resolution IR heterodyne spectrometer for laboratory and field use has been developed for operation between 7.5 and 8.5 microns. The local oscillator is a PbSe tunable diode laser kept continuously at operating temperatures of 12-60 K using a closed-cycle cooler. The laser output frequency is controlled and stabilized using a high-precision diode current supply, constant temperature controller, and a shock isolator mounted between the refrigerator cold tip and the diode mount. The system largely employs reflecting optics to minimize losses from internal reflection and absorption and to eliminate chromatic effects. Spectral analysis of the diode-laser output between 0 and 1 GHz reveals excess noise at many diode current settings, which limits the IR spectral regions over which useful heterodyne operation can be achieved. Observations have been made of atmospheric N2O, O3, and CH4 between 1170 and 1200/cm, using both a single-frequency swept IF channel and a 64-channel RF spectral line receiver with a total IF coverage of 1600 MHz.

CO.sub.2 optically pumped distributed feedback diode laser

DOEpatents

Rockwood, Stephen D.

1980-01-01

A diode laser optically pumped by a CO.sub.2 coherent source. Interference fringes generated by feeding the optical pumping beam against a second beam, periodically alter the reflectivity of the diode medium allowing frequency variation of the output signal by varying the impingent angle of the CO.sub.2 laser beams.

Development and performance of a laser heterodyne spectrometer using tunable semiconductor lasers as local oscillators

NASA Technical Reports Server (NTRS)

Glenar, D.; Kostiuk, T.; Jennings, D. E.; Mumma, M. J.

1980-01-01

A diode laser based IR heterodyne spectrometer for laboratory and field use was developed for high efficiency operation between 7.5 and 8.5 microns. The local oscillator is a PbSSe tunable diode laser kept continuously at operating temperatures of 12-60 K using a closed cycle cooler. The laser output frequency is controlled and stabilized using a high precision diode current supply, constant temperature controller, and a shock isolator mounted between the refrigerator cold tip and the diode mount. Single laser modes are selected by a grating placed in the local oscillator beam. The system employs reflecting optics throughout to minimize losses from internal reflection and absorption, and to eliminate chromatic effects. Spectral analysis of the diode laser output between 0 and 1 GHz reveals excess noise at many diode current settings, which limits the infrared spectral regions over which useful heterodyne operation can be achieved. System performance has been studied by making heterodyne measurements of etalon fringes and several Freon 13 (CF3Cl) absorption lines against a laboratory blackbody source. Preliminary field tests have also been performed using the Sun as a source.

In Vitro Comparison of the Effects of Diode Laser and CO2 Laser on Topical Fluoride Uptake in Primary Teeth

PubMed Central

Bahrololoomi, Zahra; Sorouri, Milad

2015-01-01

Objectives: Fluoride therapy is important for control and prevention of dental caries. Laser irradiation can increase fluoride uptake especially when combined with topical fluoride application. The objective of this study was to compare the effects of CO2 and diode lasers on enamel fluoride uptake in primary teeth. Materials and Methods: Forty human primary molars were randomly assigned to four groups (n=10). The roots were removed and the crowns were sectioned mesiodistally into buccal and lingual halves as the experimental and control groups. All samples were treated with 5% sodium fluoride (NaF) varnish. The experimental samples in the four groups were irradiated with 5 or 7W diode or 1 or 2W CO2 laser for 15 seconds and were compared with the controls in terms of fluoride uptake, which was determined using an ion selective electrode after acid dissolution of the specimens. Data were analyzed by SPSS version 16 using ANOVA treating the control measurements as covariates. Results: The estimated amount of fluoride uptake was 59.5± 16.31 ppm, 66.5± 14.9 ppm, 78.6± 12.43 ppm and 90.4± 11.51 ppm for 5W and 7 W diode and 1W and 2 W CO2 lasers, respectively, which were significantly greater than the values in the conventional topical fluoridation group (P<0.005). There were no significant differences between 7W diode laser and 1W CO2 laser, 5W and 7W diode laser, or 1W and 2W CO2 laser in this regard. Conclusion: The results showed that enamel surface irradiation by CO2 and diode lasers increases the fluoride uptake. PMID:27123018

In Vitro Comparison of the Effects of Diode Laser and CO2 Laser on Topical Fluoride Uptake in Primary Teeth.

PubMed

Bahrololoomi, Zahra; Fotuhi Ardakani, Faezeh; Sorouri, Milad

2015-08-01

Fluoride therapy is important for control and prevention of dental caries. Laser irradiation can increase fluoride uptake especially when combined with topical fluoride application. The objective of this study was to compare the effects of CO2 and diode lasers on enamel fluoride uptake in primary teeth. Forty human primary molars were randomly assigned to four groups (n=10). The roots were removed and the crowns were sectioned mesiodistally into buccal and lingual halves as the experimental and control groups. All samples were treated with 5% sodium fluoride (NaF) varnish. The experimental samples in the four groups were irradiated with 5 or 7W diode or 1 or 2W CO2 laser for 15 seconds and were compared with the controls in terms of fluoride uptake, which was determined using an ion selective electrode after acid dissolution of the specimens. Data were analyzed by SPSS version 16 using ANOVA treating the control measurements as covariates. The estimated amount of fluoride uptake was 59.5± 16.31 ppm, 66.5± 14.9 ppm, 78.6± 12.43 ppm and 90.4± 11.51 ppm for 5W and 7 W diode and 1W and 2 W CO2 lasers, respectively, which were significantly greater than the values in the conventional topical fluoridation group (P<0.005). There were no significant differences between 7W diode laser and 1W CO2 laser, 5W and 7W diode laser, or 1W and 2W CO2 laser in this regard. The results showed that enamel surface irradiation by CO2 and diode lasers increases the fluoride uptake.

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

NASA Technical Reports Server (NTRS)

Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

1989-01-01

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Aluminium surface treatment with ceramic phases using diode laser

NASA Astrophysics Data System (ADS)

Labisz, K.; Tański, T.; Brytan, Z.; Pakieła, W.; Wiśniowski, M.

2016-07-01

Ceramic particles powder feeding into surface layer of engineering metal alloy is a well-known and widely used technique. New approach into the topic is to obtain finely distributed nano-sized particles involved in the aluminium matrix using the traditional laser technology. In this paper are presented results of microstructure investigation of cast aluminium-silicon-copper alloys surface layer after heat treatment and alloying with ceramic carbides of WC and ZrO2 using high-power diode laser. The surface layer was specially prepared for the reason of reducing the reflectivity, which is the main problem in the up-to-date metal matrix composites production. With scanning electron microscopy, it was possible to determine the deformation process and distribution of WC and ZrO2 ceramic powder phase. Structure of the surface after laser treatment changes, revealing three zones—remelting zone, heat-affected zone and transition zone placed over the Al substrate. The structural changes of ceramic powder, its distribution and morphology as well as microstructure of the matrix material influence on functional properties, especially wear resistance and hardness of the achieved layer, were investigated.

Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser

NASA Technical Reports Server (NTRS)

Coyle, Donald B.

2008-01-01

A four-pass optical coupler affords increased (in comparison with related prior two-pass optical couplers) utilization of light generated by a laser diode in side pumping of a solid-state laser slab. The original application for which this coupler was conceived involves a neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal slab, which, when pumped by a row of laser diodes at a wavelength of 809 nm, lases at a wavelength of 1,064 nm. Heretofore, typically, a thin laser slab has been pumped in two passes, the second pass occurring by virtue of reflection of pump light from a highly reflective thin film on the side opposite the side through which the pump light enters. In two-pass pumping, a Nd:YAG slab having a thickness of 2 mm (which is typical) absorbs about 84 percent of the 809-nm pump light power, leaving about 16 percent of the pump light power to travel back toward the laser diodes. This unused power can cause localized heating of the laser diodes, thereby reducing their lifetimes. Moreover, if the slab is thinner than 2 mm, then even more unused power travels back toward the laser diodes. The four-pass optical coupler captures most of this unused pump light and sends it back to the laser slab for two more passes. As a result, the slab absorbs more pump light, as though it were twice as thick. The gain and laser cavity beam quality of a smaller laser slab in conjunction with this optical coupler can thus be made comparable to those of a larger two-pass-pumped laser slab.

Comparison of effects of diode laser and CO2 laser on human teeth and their usefulness in topical fluoridation.

PubMed

González-Rodríguez, Alberto; de Dios López-González, Juan; del Castillo, Juan de Dios Luna; Villalba-Moreno, Juan

2011-05-01

Various authors have reported more effective fluoridation from the use of lasers combined with topical fluoride than from conventional topical fluoridation. Besides the beneficial effect of lasers in reducing the acid solubility of an enamel surface, they can also increase the uptake of fluoride. The study objectives were to compare the action of CO(2) and GaAlAs diode lasers on dental enamel and their effects on pulp temperature and enamel fluoride uptake. Different groups of selected enamel surfaces were treated with amine fluoride and irradiated with CO(2) laser at an energy power of 1 or 2 W or with diode laser at 5 or 7 W for 15 s each and compared to enamel surfaces without treatment or topical fluoridated. Samples were examined by means of environmental scanning electron microscopy (ESEM). Surfaces of all enamel samples were then acid-etched, measuring the amount of fluoride deposited on the enamel by using a selective ion electrode. Other enamel surfaces selected under the same conditions were irradiated as described above, measuring the increase in pulp temperature with a thermocouple wire. Fluorination with CO(2) laser at 1 W and diode laser at 7 W produced a significantly greater fluoride uptake on enamel (89 ± 18 mg/l) and (77 ± 17 mg/l) versus topical fluoridation alone (58 ± 7 mg/l) and no treatment (20 ± 1 mg/l). Diode laser at 5 W produced a lesser alteration of the enamel surface compared to CO(2) laser at 1 W, but greater pulp safety was provided by CO(2) laser (ΔT° 1.60° ± 0.5) than by diode laser (ΔT° 3.16° ± 0.6). Diode laser at 7 W and CO(2) laser at 2 W both caused alterations on enamel surfaces, but great pulp safety was again obtained with CO(2) (ΔT° 4.44° ± 0.60) than with diode (ΔT° 5.25° ± 0.55). Our study demonstrates that CO(2) and diode laser irradiation of the enamel surface can both increase fluoride uptake; however, laser energy parameters must be carefully controlled in order to limit increases in pulpal temperature and alterations to the enamel surface.

Resonantly diode-pumped continuous-wave and Q-switched Er:YAG laser at 1645 nm.

PubMed

Chang, N W H; Simakov, N; Hosken, D J; Munch, J; Ottaway, D J; Veitch, P J

2010-06-21

We describe an efficient Er:YAG laser that is resonantly pumped using continuous-wave (CW) laser diodes at 1470 nm. For CW lasing, it emits 6.1 W at 1645 nm with a slope efficiency of 36%, the highest efficiency reported for an Er:YAG laser that is pumped in this manner. In Q-switched operation, the laser produces diffraction-limited pulses with an average power of 2.5 W at 2 kHz PRF. To our knowledge this is the first Q-switched Er:YAG laser resonantly pumped by CW laser diodes.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1991-02-19

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

Generation conditions of CW Diode Laser Sustained Plasma

NASA Astrophysics Data System (ADS)

Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

2016-09-01

Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

Characterization of diode-laser stacks for high-energy-class solid state lasers

NASA Astrophysics Data System (ADS)

Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas

2014-03-01

In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.

Laser Space Propulsion Overview (Postprint)

DTIC Science & Technology

2006-09-01

meet with currently fielded thruster technology. However, a laser-ablation propulsion engine using a set of diode-pumped glass fiber amplifiers with a...with Cm = 56µN/W and ηAB = 100%. These two units will be combined in a single device using low-mass diode-pumped glass fiber laser amplifiers to...advantage of extremely lightweight diode-pumped glass fiber lasers onboard the spacecraft to provide thrust with variable Isp and unmatched thrust

Temperature issues with white laser diodes, calculation and approach for new packages

NASA Astrophysics Data System (ADS)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

AlGaInN laser diode technology for free-space telecom applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.; Watson, M. A.; Blanchard, P.; White, H.

2015-03-01

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. We consider the suitability of AlGaInN laser diode technology for free space laser communication, both airborne links and underwater telecom applications, mainly for defense and oil and gas industries.

Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity

DTIC Science & Technology

1992-10-01

laser light is considered planar. In actuality, the HLP 1400 laser diode used in this experiment has a gaussian profile. This approximation is frequently...return beam is in phase with either the light transmitted through or reflected off the rear facet of the diode laser. In Fig. 3.2, E, is the light ...In the first case an anti-reflection coated laser diode was used. It emitted a broadband spectrum without the feedback. The PCM just lowered the

GreenLight HPS laser 120-W versus diode laser 200-W vaporization of the prostate: comparative clinical experience.

PubMed

Chiang, Po Hui; Chen, Chien Hsu; Kang, Chih Hsiung; Chuang, Yao Chi

2010-09-01

We present our clinical experiences of two recently introduced vaporization laser systems: the GreenLight High Performance System (HPS) laser (532 nm, 120 W) and the Diolas LFD diode laser (980 nm, 200 W). Two laser systems were evaluated to compare their clinical results for the treatment of benign prostatic hyperplasia (BPH). Patients were treated using either the GreenLight HPS laser (n = 84) or the diode laser (n = 55) in a prospective randomized study. The data of International Prostate Symptom Score (IPSS), maximum flow rate (Q(max)), post-void residual urine (PVR), and quality of life score (Qols) were recorded at baseline, 1-, 6-, and 12-month follow-ups. The prostate volume and prostate-specific antigen (PSA) level were assessed at baseline and 6-month follow-up. All complications were also recorded. There was a statistically significant difference in IPSS, Q(max), PVR, and QoLs in each laser group at the 1-, 6-, and 12-month follow-ups compared with baseline. There was no statistical significant difference in any of these parameters at any follow-up interval between each group. The diode laser demonstrates superior hemostatic properties compared with the GreenLight HPS laser. Postoperative incontinence and postoperative irritative symptoms are more pronounced (P < 0.05) after diode laser prostatectomy. Higher incidence of dysuria with sloughing tissues and epididymitis (P < 0.05) is noted after diode laser prostatectomy. Other complications were comparable for both procedures. Although both lasers can improve subjective and objective parameters of BPH, both can produce undesired effects. The search for the ideal vaporization laser to treat BPH still continues. 2010 Wiley-Liss, Inc.

Overview on new diode lasers for defense applications

NASA Astrophysics Data System (ADS)

Neukum, Joerg

2012-11-01

Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range < 1.0 μm • Scalable Mini-Bar concept for high brightness fiber coupled modules • The Light Weight Fiber Coupled module based on the Mini-Bar concept Overall, High Power Diode Lasers offer many ways to be used in new applications in the defense market.

Nd:GdVO4 ring laser pumped by laser diodes

NASA Astrophysics Data System (ADS)

Hao, E. J.; Li, T.; Wang, Z. D.; Zhang, Y.

2013-02-01

The design and operation of a laser diode-pumped Nd:GdVO4 ring laser is described. A composite crystal (Nd:GdVO4/YVO4) with undoped ends is single-end pumped by a fiber-coupled laser diode (LD) at 808 nm. A four-mirror ring cavity is designed to keep the laser operating unidirectionally, which eliminates spatial hole burning in the standing-wave cavity. This laser can operate either as continuous wave (CW) or Q-switched. The single-frequency power obtained was 9.1 W at 1063 nm. Q-switched operation produced 0.23 mJ/pulse at 20 kHz in the fundamental laser.

Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Megalini, Ludovico; Cabinian, Brian C.; Zhao, Hongwei; Oakley, Douglas C.; Bowers, John E.; Klamkin, Jonathan

2018-02-01

We employ a simple two-step growth technique to grow large-area 1550-nm laser structures by direct hetero-epitaxy of III-V compounds on patterned exact-oriented (001) silicon (Si) substrates by metal organic chemical vapor deposition. Densely-packed, highly uniform, flat and millimeter-long indium phosphide (InP) nanowires were grown from Si v-grooves separated by silicon dioxide (SiO2) stripes with various widths and pitches. Following removal of the SiO2 patterns, the InP nanowires were coalesced and, subsequently, 1550-nm laser structures were grown in a single overgrowth without performing any polishing for planarization. X-ray diffraction, photoluminescence, atomic force microscopy and transmission electron microscopy analyses were used to characterize the epitaxial material. PIN diodes were fabricated and diode-rectifying behavior was observed.

[Gas pipeline leak detection based on tunable diode laser absorption spectroscopy].

PubMed

Zhang, Qi-Xing; Wang, Jin-Jun; Liu, Bing-Hai; Cai, Ting-Li; Qiao, Li-Feng; Zhang, Yong-Ming

2009-08-01

The principle of tunable diode laser absorption spectroscopy and harmonic detection technique was introduced. An experimental device was developed by point sampling through small multi-reflection gas cell. A specific line near 1 653. 7 nm was targeted for methane measurement using a distributed feedback diode laser as tunable light source. The linearity between the intensity of second harmonic signal and the concentration of methane was determined. The background content of methane in air was measured. The results show that gas sensors using tunable diode lasers provide a high sensitivity and high selectivity method for city gas pipeline leak detection.

Design of a portable noninvasive photoacoustic glucose monitoring system integrated laser diode excitation with annular array detection

NASA Astrophysics Data System (ADS)

Zeng, Lvming; Liu, Guodong; Yang, Diwu; Ren, Zhong; Huang, Zhen

2008-12-01

A near-infrared photoacoustic glucose monitoring system, which is integrated dual-wavelength pulsed laser diode excitation with eight-element planar annular array detection technique, is designed and fabricated during this study. It has the characteristics of nonivasive, inexpensive, portable, accurate location, and high signal-to-noise ratio. In the system, the exciting source is based on two laser diodes with wavelengths of 905 nm and 1550 nm, respectively, with optical pulse energy of 20 μJ and 6 μJ. The laser beam is optically focused and jointly projected to a confocal point with a diameter of 0.7 mm approximately. A 7.5 MHz 8-element annular array transducer with a hollow structure is machined to capture photoacoustic signal in backward mode. The captured signals excitated from blood glucose are processed with a synthetic focusing algorithm to obtain high signal-to-noise ratio and accurate location over a range of axial detection depth. The custom-made transducer with equal area elements is coaxially collimated with the laser source to improve the photoacoustic excite/receive efficiency. In the paper, we introduce the photoacoustic theory, receive/process technique, and design method of the portable noninvasive photoacoustic glucose monitoring system, which can potentially be developed as a powerful diagnosis and treatment tool for diabetes mellitus.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

NASA Astrophysics Data System (ADS)

Hansen, Anders K.; Jensen, Ole B.; Sumpf, Bernd; Erbert, Götz; Unterhuber, Angelika; Drexler, Wolfgang; Andersen, Peter E.; Petersen, Paul Michael

2014-02-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re-focusing and dispersion compensating optics between the two nonlinear crystals. In the low-power limit, such a cascade of two crystals has the theoretical potential for generation of four times as much power as a single crystal without adding significantly to the complexity of the system. The experimentally achieved power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications, such as optical coherence tomography or multimodal imaging devices, e.g., FTCARS-OCT, based on a strongly pumped ultrafast Ti:Sapphire laser.

Development and optimization of a diode laser for photodynamic therapy.

PubMed

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Development and optimization of a diode laser for photodynamic therapy

PubMed Central

Lim, Hyun Soo

2011-01-01

Background and Aims: This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. Materials and Methods: We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. Results and Comments: The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. Conclusions: The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes. PMID:24155529

The application of diode laser in the treatment of oral soft tissues lesions. A literature review.

PubMed

Ortega-Concepción, Daniel; Cano-Durán, Jorge A; Peña-Cardelles, Juan-Francisco; Paredes-Rodríguez, Víctor-Manuel; González-Serrano, José; López-Quiles, Juan

2017-07-01

Since its appearance in the dental area, the laser has become a treatment of choice in the removal of lesions in the oral soft tissues, due to the numerous advantages they offer, being one of the most used currently the diode laser. The aim of this review was to determine the efficacy and predictability of diode laser as a treatment of soft tissue injuries compared to other surgical methods. A literature review of articles published in PubMed/MEDLINE, Scopus and the Cochrane Library databases between 2007 and 2017 was performed. "Diode laser", "soft tissue", "oral cavity" and "oral surgery" were employed for the search strategy. Only articles published English or Spanish were selected. The diode laser is a minimally invasive technology that offers great advantages, superior to those of the conventional scalpel, such as reduction of bleeding, inflammation and the lower probability of scars. Its effectiveness is comparable to that of other types of lasers, in addition to being an option of lower cost and greater ease of use. Its application in the soft tissues has been evaluated, being a safe and effective method for the excision of lesions like fibromas, epulis fissuratum and the accomplishment of frenectomies. The diode laser can be used with very good results for the removal of lesions in soft tissues, being used in small exophytic lesions due to their easy application, adequate coagulation, no need to suture and the slightest inflammation and pain. Key words: Diode laser, soft tissues, oral cavity, oral surgery.

Semiconductor diode laser material and devices with emission in visible region of the spectrum

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.

1975-01-01

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

DOE PAGES

Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

2015-10-30

We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al 0.32Ga 0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 10 8 cm –2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm 2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm 2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodesmore » into the deep UV.« less

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

PubMed

Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

2011-10-10

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

Comparing the effect of diode laser against acyclovir cream for the treatment of herpes labialis.

PubMed

Honarmand, Marieh; Farhadmollashahi, Leila; Vosoughirahbar, Ehsan

2017-06-01

Recently alternative therapies such as the use of diode laser therapy have been introduced for recurrent herpes labial infection. The aim of this study was to evaluate the effectiveness of diode laser for treatment of recurrent herpes labialis. This was single-blind randomized clinical trial to evaluate the efficacy of diode laser for the treatment of recurrent herpes labial. In total, 60 patients whit recurrent herpes simplex labialis were selected and randomly divided in to three groups. 20 patients received treatment whit diode laser (at a wavelength of 870 nm, energy density 4.5 j/cm2), 20 patients were treated with acyclovir cream 5%, 20 patients received treatment with laser-off (placebo). The end point was lesions crusting. Data analyzed by Tukey HSD Test and One-way ANOVA (at a significance level of 0.05) in SPSS-20 software. The mean length of recovery time (day) in the laser, off laser, and acyclovir groups was 2.20±0.41, 4.30±1.03, and 3.4±1.142, respectively. There is a significant difference between three groups in this regard ( P <0.0001). The mean duration of pain (day) was 1.35±0.74, 2.65±1.27, and 2.30±0.92 for laser, off laser, and acyclovir groups, respectively ( P <0.0001). Treatment with diode laser reduced the length of recovery time and pain severity faster than treatment with acyclovir cream. Key words: Recurrent herpes labial, Acyclovir, Low level laser therapy.

Holmium Doped Solid State Laser Resonantly Pumped and Q-Switched by Novel GaSb-Based Photonic Devices

DTIC Science & Technology

2011-08-31

increased overlap with p-cladding, presumably due to dominant role of inter valence band absorption [7]. Details of the conduction band structure of the...absorption to total loss. In the specific structures used here the n-cladding composition resulted into material with three valleys in conduction band to...materials. The beam properties of the high power 2 μm emitting GaSb -based diode lasers was improved by utilization of the waveguide structure with

Handheld probe integrating laser diode and ultrasound transducer array for ultrasound/photoacoustic dual modality imaging.

PubMed

Daoudi, K; van den Berg, P J; Rabot, O; Kohl, A; Tisserand, S; Brands, P; Steenbergen, W

2014-10-20

Ultrasound and photoacoustics can be utilized as complementary imaging techniques to improve clinical diagnoses. Photoacoustics provides optical contrast and functional information while ultrasound provides structural and anatomical information. As of yet, photoacoustic imaging uses large and expensive systems, which limits their clinical application and makes the combination costly and impracticable. In this work we present and evaluate a compact and ergonomically designed handheld probe, connected to a portable ultrasound system for inexpensive, real-time dual-modality ultrasound/photoacoustic imaging. The probe integrates an ultrasound transducer array and a highly efficient diode stack laser emitting 130 ns pulses at 805 nm wavelength and a pulse energy of 0.56 mJ, with a high pulse repetition frequency of up to 10 kHz. The diodes are driven by a customized laser driver, which can be triggered externally with a high temporal stability necessary to synchronize the ultrasound detection and laser pulsing. The emitted beam is collimated with cylindrical micro-lenses and shaped using a diffractive optical element, delivering a homogenized rectangular light intensity distribution. The system performance was tested in vitro and in vivo by imaging a human finger joint.

Injection-insensitive lateral divergence in broad-area diode lasers achieved by spatial current modulation

NASA Astrophysics Data System (ADS)

Wang, Tao; Tong, Cunzhu; Wang, Lijie; Zeng, Yugang; Tian, Sicong; Shu, Shili; Zhang, Jian; Wang, Lijun

2016-11-01

High-power broad-area (BA) diode lasers often suffer from low beam quality, broad linewidth, and a widened slow-axis far field with increasing current. In this paper, a two-dimensional current-modulated structure is proposed and it is demonstrated that it can reduce not only the far-field sensitivity to the injection current but also the linewidth of the lasing spectra. Injection-insensitive lateral divergence was realized, and the beam parameter product (BPP) was improved by 36.5%. At the same time, the linewidth was decreased by about 45% without significant degradations of emission power and conversion efficiency.

Mass modeling for electrically powered space-based Yb:YAG lasers

NASA Astrophysics Data System (ADS)

Fitzgerald, Kevin F.; Leshner, Richard B.; Winsor, Harry V.

2000-05-01

An estimate for the mass of a nominal high-energy laser system envisioned for space applications is presented. The approach features a diode pumped solid state Yb:YAG laser. The laser specifications are10 MW average output power, and periods of up to 100 seconds continuous, full-power operation without refueling. The system is powered by lithium ion batteries, which are recharged by a solar array. The power requirements for this system dominate over any fixed structural features, so the critical issues in scaling a DPSSL to high power are made transparent. When based on currently available space qualified batteries, the design mass is about 500 metric tons. Therefore, innovations are required before high power electrical lasers will be serious contenders for use in space systems. The necessary innovations must improve the rate at which lithium ion batteries can output power. Masses for systems based on batteries that should be available in the near future are presented. This analysis also finds that heating of the solid state lasing material, cooling of the diode pump lasers and duty cycle are critical issues. Features dominating the thermal control requirements are the heat capacity of garnet, the operational temperature range of the system, and the required cooling time between periods of full operation. The duty cycle is a critical factor in determining both the mass of the diode array needed, and the mass of the power supply system.

Shock isolator for diode laser operation on a closed-cycle refrigerator

NASA Technical Reports Server (NTRS)

Jennings, D. E.; Hillman, J. J.

1977-01-01

Closed-cycle helium refrigerators are widely used as coolers for semiconductor diode lasers. These refrigerators pose several difficulties including temperature oscillations due to varying refrigerator capacity during the Solvay cycle, and impact shocks delivered to the diode in the cycle's expansion phase. A shock isolator has been designed to isolate diode lasers from such impact shocks. Slow diode current scans have been made before installation of the shock isolator, with the isolator but no thermal damper, and with both devices. With the isolator and no damper, the diode output frequency oscillated at the refrigerator cycle rate, deviating by plus or minus 40 MHz. Using the isolator and the damper no frequency fluctuation was detected.

Novel Optical Methods for Identification, Imaging, and Preservation of the Cavernous Nerves Responsible for Penile Erections during Prostate Cancer Surgery

DTIC Science & Technology

2011-03-01

epartment of Physics and Optical Science harlotte, North Carolina 28223 homas P. Weldon niversity of North Carolina at Charlotte epartment of...Lens Glass Ferrule Visible Diode Laser IR Diode Laser 90% 10% Fiber Coupler 10/90 (SMF-28) Butterfly Diode Laser Mount 1420 1430 147014501440

High-power 0.87-micron channel substrate planar lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Stewart, T. R.; Gilbert, D. B.; Slavin, S. E.; Carlin, D. B.

1988-01-01

High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems. The CSP laser structure has been optimized for operation at an emission wavelength of 870 nm. Such devices have exhibited output powers in excess of 80 mW CW at an operating temperature of 80 C.

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-10-01

AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

Management of Chronic Periodontitis Using Chlorhexidine Chip and Diode Laser-A Clinical Study.

PubMed

Jose, Kachapilly Arun; Ambooken, Majo; Mathew, Jayan Jacob; Issac, Annie Valayil; Kunju, Ajithkumar Parachalil; Parameshwaran, Renjith Athirkandathil

2016-04-01

The use of adjuncts like chlorhexidine local delivery and diode laser decontamination have been found to improve the clinical outcomes of scaling and root planing in non-surgical periodontal therapy in patients with chronic periodontitis. To evaluate the effects of diode laser and chlorhexidine chip as adjuncts to scaling and root planing in the management of chronic periodontitis. The objective is to evaluate the outcome of chlorhexidine chip and diode laser as adjuncts to scaling and root planing on clinical parameters like Plaque Index, Gingival Index, probing pocket depth and clinical attachment level. Department of Periodontics. Randomized clinical trial with split mouth design. Fifteen chronic periodontitis patients having a probing pocket depth of 5mm-7mm on at least one interproximal site in each quadrant of the mouth were included in the study. After initial treatment, four sites in each patient were randomly subjected to scaling and root planing (control), chlorhexidine chip application (CHX chip group), diode laser (810 nm) decontamination (Diode laser group) or combination of both (Diode laser and chip group). Plaque Index (PI), Gingival Index (GI), probing pocket depth (PPD) and clinical attachment level (CAL) were assessed at baseline, one month and three months. Results were statistically analysed using paired T test, one-way ANOVA, Tukey's HSD test and repeated measure ANOVA. Post-treatment, the test and control sites showed a statistically significant reduction in PI, GI, PPD, and CAL. After three months, a mean PPD reduction of 1.47±0.52 mm in control group, 1.40±0.83 mm in diode laser group, 2.67±0.62 mm in CHX group, and 2.80± 0.77 mm in combination group was seen. The mean gain in CAL were 1.47±0.52 mm in the control group, 1.40±0.83 mm in diode laser group, 2.67± 0.49 mm in CHX group and 2.67± 0.82 mm in combination group respectively. The differences in PPD reduction and CAL gain between control group and CHX chip and combination groups were statistically significant (p<0.05) at three months, whereas, the diode laser group did not show any significant difference from the control group. Chlorhexidine local delivery alone or in combination with diode laser decontamination is effective in reducing probing pocket depth and improving clinical attachment levels when used as adjuncts to scaling and root planing in non-surgical periodontal therapy of patients with chronic periodontitis.

Management of Chronic Periodontitis Using Chlorhexidine Chip and Diode Laser-A Clinical Study

PubMed Central

Ambooken, Majo; Mathew, Jayan Jacob; Issac, Annie Valayil; Kunju, Ajithkumar Parachalil; Parameshwaran, Renjith Athirkandathil

2016-01-01

Introduction The use of adjuncts like chlorhexidine local delivery and diode laser decontamination have been found to improve the clinical outcomes of scaling and root planing in non-surgical periodontal therapy in patients with chronic periodontitis. Aim To evaluate the effects of diode laser and chlorhexidine chip as adjuncts to scaling and root planing in the management of chronic periodontitis. The objective is to evaluate the outcome of chlorhexidine chip and diode laser as adjuncts to scaling and root planing on clinical parameters like Plaque Index, Gingival Index, probing pocket depth and clinical attachment level. Study and Design Department of Periodontics. Randomized clinical trial with split mouth design. Materials and Methods Fifteen chronic periodontitis patients having a probing pocket depth of 5mm-7mm on at least one interproximal site in each quadrant of the mouth were included in the study. After initial treatment, four sites in each patient were randomly subjected to scaling and root planing (control), chlorhexidine chip application (CHX chip group), diode laser (810 nm) decontamination (Diode laser group) or combination of both (Diode laser and chip group). Plaque Index (PI), Gingival Index (GI), probing pocket depth (PPD) and clinical attachment level (CAL) were assessed at baseline, one month and three months. Statistical analysis Results were statistically analysed using paired T test, one-way ANOVA, Tukey’s HSD test and repeated measure ANOVA. Results Post-treatment, the test and control sites showed a statistically significant reduction in PI, GI, PPD, and CAL. After three months, a mean PPD reduction of 1.47±0.52 mm in control group, 1.40±0.83 mm in diode laser group, 2.67±0.62 mm in CHX group, and 2.80± 0.77 mm in combination group was seen. The mean gain in CAL were 1.47±0.52 mm in the control group, 1.40±0.83 mm in diode laser group, 2.67± 0.49 mm in CHX group and 2.67± 0.82 mm in combination group respectively. The differences in PPD reduction and CAL gain between control group and CHX chip and combination groups were statistically significant (p<0.05) at three months, whereas, the diode laser group did not show any significant difference from the control group. Conclusion Chlorhexidine local delivery alone or in combination with diode laser decontamination is effective in reducing probing pocket depth and improving clinical attachment levels when used as adjuncts to scaling and root planing in non-surgical periodontal therapy of patients with chronic periodontitis. PMID:27190958

A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

PubMed

Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

2012-06-18

By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate <10(-10) is -25.6 dBm, and the power penalty added after 25-km transmission is less than 2 dB for all 16 channels.

940nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K: analysis of remaining limits and path to higher efficiency and power at 200K and 300K

NASA Astrophysics Data System (ADS)

Frevert, C.; Bugge, F.; Knigge, S.; Ginolas, A.; Erbert, G.; Crump, P.

2016-03-01

Both high-energy-class laser facilities and commercial high-energy pulsed laser sources require reliable optical pumps with the highest pulse power and electro-optical efficiency. Although commercial quasi-continuous wave (QCW) diode laser bars reach output powers of 300…500 W further improvements are urgently sought to lower the cost per Watt, improve system performance and reduce overall system complexity. Diode laser bars operating at temperatures of around 200 K show significant advances in performance, and are particularly attractive in systems that use cryogenically cooled solid state lasers. We present the latest results on 940 nm, passively cooled, 4 mm long QCW diode bars which operate under pulse conditions of 1.2 ms, 10 Hz at an output power of 1 kW with efficiency of 70% at 203 K: a two-fold increase in power compared to 300 K, without compromising efficiency. We discuss how custom low-temperature design of the vertical layers can mitigate the limiting factors such as series resistance while sustaining high power levels. We then focus on the remaining obstacles to higher efficiency and power, and use a detailed study of multiple vertical structures to demonstrate that the properties of the active region are a major performance limit. Specifically, one key limit to series resistance is transport in the layers around the active region and the differential internal efficiency is closely correlated to the threshold current. Tailoring the barriers around the active region and reducing transparency current density thus promise bars with increased performance at temperatures of 200 K as well as 300 K.

Hysteroscopic metroplasty for the septate uterus with diode laser: a pilot study.

PubMed

Nappi, Luigi; Pontis, Alessandro; Sorrentino, Felice; Greco, Pantaleo; Angioni, Stefano

2016-11-01

To evaluate the feasibility and safety of office hysteroscopic metroplasty using a 980nm diode laser. 18 patients were treated for septate uterus between 2013 and 2016. The indications for hysteroscopic metroplasty were recurrent abortion in 11 of the women and primary infertility in the other seven. We used a 5mm-office hysteroscope with a diode laser fibre. After exploration of the cavity, the septum was divided with use of the laser fibre. Operating time was 13,16±1,33min. Intraoperative pain was 3,05±0,72. No intraoperative or postoperative complications were observed. Follow-up performed 2 months after the hysteroscopic metroplasty confirmed the complete removal of the septum and no evidence of intrauterine synechiae. Office hysteroscopic metroplasty with use of a diode laser is safe and feasible; we believe that vaporization of the septum with a diode laser could reduce the formation of adhesions and consequently reduce the occurrence of septum persistence. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

100W high-brightness multi-emitter laser pump

NASA Astrophysics Data System (ADS)

Duesterberg, Richard; Xu, Lei; Skidmore, Jay A.; Guo, James; Cheng, Jane; Du, Jihua; Johnson, Brad; Vecht, David L.; Guerin, Nicolas; Huang, Benlih; Yin, Dongliang; Cheng, Peter; Raju, Reddy; Lee, Kong Weng; Cai, Jason; Rossin, Victor; Zucker, Erik P.

2011-03-01

We report results of a spatially-multiplexed broad area laser diode platform designed for efficient pumping of fiber lasers or direct-diode systems. Optical output power in excess of 100W from a 105μm core, 0.15NA fiber is demonstrated with high coupling efficiency. The compact form factor and low thermal resistance enable tight packing densities needed for kW-class fiber laser systems. Broad area laser diodes have been optimized to reduce near- and far-field performance and prevent blooming without sacrificing other electro-optic parameters. With proper lens optimization this produces ~5% increase in coupling / wall plug efficiency for our design. In addition to performance characteristics, an update on long term reliability testing of 9XX nm broad area laser diode is provided that continues to show no wear out under high acceleration. Under nominal operating conditions of 12W ex-facet power at 25C, the diode mean time to failure (MTTF) is forecast to be ~ 480 kh.

Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

PubMed

Hippler, Michael

2015-08-04

We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

Dynamic response of a fiber-optic ring resonator: Analysis with influences of light-source parameters

NASA Astrophysics Data System (ADS)

Seraji, Faramarz E.

2009-03-01

In practice, dynamic behavior of fiber-optic ring resonator (FORR) appears as a detrimental factor to influence the transmission response of the FORR. This paper presents dynamic response analysis of the FORR by considering phase modulation of the FORR loop and sinewave modulation of input signal applied to the FORR from a laser diode. The analysis investigates the influences of modulation frequency and amplitude modulation index of laser diode, loop delay time of the FORR, phase angle between FM and AM response of laser diode, and laser diode line-width on dynamic response of the FORR. The analysis shows that the transient response of the FORR strongly depends on the product of modulation frequency and loop delay time, coupling and transmission coefficients of the FORR. The analyses presented here may have applications in optical systems employing an FORR with a laser diode source.

The method of pulsed x-ray detection with a diode laser.

PubMed

Liu, Jun; Ouyang, Xiaoping; Zhang, Zhongbing; Sheng, Liang; Chen, Liang; Tan, Xinjian; Weng, Xiufeng

2016-12-01

A new class of pulsed X-ray detection methods by sensing carrier changes in a diode laser cavity has been presented and demonstrated. The proof-of-principle experiments on detecting pulsed X-ray temporal profile have been done through the diode laser with a multiple quantum well active layer. The result shows that our method can achieve the aim of detecting the temporal profile of a pulsed X-ray source. We predict that there is a minimum value for the pre-bias current of the diode laser by analyzing the carrier rate equation, which exists near the threshold current of the diode laser chip in experiments. This behaviour generally agrees with the characterizations of theoretical analysis. The relative sensitivity is estimated at about 3.3 × 10 -17 C ⋅ cm 2 . We have analyzed the time scale of about 10 ps response with both rate equation and Monte Carlo methods.

Construction of an Extended Cavity Tunable Diode Laser

NASA Astrophysics Data System (ADS)

Deveney, Edward; Metcalf, Harold; Noe, John

2001-03-01

A diverse and vast amount of experiments at the forefront of experimental physics typically use diode lasers as an integral part of their arrangement. However, researchers who use unmodified commercially available diode lasers run into several complications. The laser diode that is purchased is often not of the same wavelength as is advertised; thus the researcher’s desired wavelength is not met. Because the semiconductor has such a short external cavity, it is very sensitive to the injection current, changes in room temperature, and has a large linewidth making it harder to tune. To obtain a finely tuned diode laser, temperature and current controlling of the diode laser are used in conjunction with an extended semiconductor cavity. This is achieved by mounting the hermetically sealed assembly atop a thermoelectric cooler, which uses the Peltier effect. Furthermore, the variation of the injection current may be used as an additional control for the wavelength output of the diode. The power range of 70 mW as controlled by the injection current adjusts the wavelength by a span of only 4 nanometers. The extended cavity consists of a diffraction grating adhered to a mirror mount and is used for grating feedback. That in turn is used to reduce the linewidth sufficiently enough in order to provide much better tunability. In the next three weeks, the tunable diode laser will be specifically applied to research in the areas of Second Harmonic Generation in a PPLN Crystal and Saturated Rubidium Spectroscopy. This study was supported in part by NSF grant PHY99-12312.

Role of diode lasers in oro-facial pain management.

PubMed

Javed, F; Kellesarian, S V; Romanos, G E

2017-01-01

With the increasing use of low level laser therapy (LLLT) in clinical dentistry, the aim of the present study was to assess the effectiveness of diode lasers in the management of orofacial pain. Indexed databases were searched without language and time restrictions up to and including July 2016 using different combinations of the following key words: oral, low level laser therapy, dental, pain, diode lasers, discomfort and analgesia. From the literature reviewed it is evident that LLLT is effective compared to traditional procedures in the management of oro-facial pain associated to soft tissue and hard tissue conditions such as premalignant lesions, gingival conditions and dental extractions. However, it remains to be determined which particular wavelength will produce the more favorable and predictable outcome in terms of pain reduction. It is highly recommended that further randomized control trials with well-defined control groups should be performed to determine the precise wavelengths of the diode lasers for the management of oro-facial pain. Within the limits of the present review, it is concluded that diode lasers therapy is more effective in the management of oro-facial pain compared to traditional procedures.

The Versatility of 980 nm Diode Laser in Dentistry: A Case Series

PubMed Central

Derikvand, Nahid; Chinipardaz, Zahra; Ghasemi, Sara; Chiniforush, Nasim

2016-01-01

Introduction: Laser surgery has been considered a popular alternative over conventional modalities in dentistry during the last few years. Among different types of lasers, diode lasers have gained special attention in oral soft tissue surgery. Case Reports: Five patients were referred to a private office. After careful evaluation of medical history and oral examination, oral diagnosis and treatment plan of each patient was established as follows: (1) A 21-year-old female with ankyloglossia (tongue-tie); (2) A 65-year-old female with a poor denture fit needing vestibuloplasty and frenectomy; (3) A 10-year-old male patient with pigmented gingiva in mandible and maxilla; (4) A 14-year-old female needing exposure of maxillary right canine for bracket bonding; and (5) A 25-year-old female patient who has a gingival maxillary frenum with a nodule. The treatment plan for all the patients was laser surgery with diode laser at 980 nm, in continuous mode. Results: All the patients experienced normal healing process with no postoperative complications. Favorable outcomes of laser surgery were observed on follow-up sessions. Conclusion: Considering the versatility of the 980 nm diode laser in oral soft tissue surgeries and the advantages of laser surgery, this study suggests the use of 980 nm diode laser in this regard. PMID:28144444

The Versatility of 980 nm Diode Laser in Dentistry: A Case Series.

PubMed

Derikvand, Nahid; Chinipardaz, Zahra; Ghasemi, Sara; Chiniforush, Nasim

2016-01-01

Introduction: Laser surgery has been considered a popular alternative over conventional modalities in dentistry during the last few years. Among different types of lasers, diode lasers have gained special attention in oral soft tissue surgery. Case Reports: Five patients were referred to a private office. After careful evaluation of medical history and oral examination, oral diagnosis and treatment plan of each patient was established as follows: (1) A 21-year-old female with ankyloglossia (tongue-tie); (2) A 65-year-old female with a poor denture fit needing vestibuloplasty and frenectomy; (3) A 10-year-old male patient with pigmented gingiva in mandible and maxilla; (4) A 14-year-old female needing exposure of maxillary right canine for bracket bonding; and (5) A 25-year-old female patient who has a gingival maxillary frenum with a nodule. The treatment plan for all the patients was laser surgery with diode laser at 980 nm, in continuous mode. Results: All the patients experienced normal healing process with no postoperative complications. Favorable outcomes of laser surgery were observed on follow-up sessions. Conclusion: Considering the versatility of the 980 nm diode laser in oral soft tissue surgeries and the advantages of laser surgery, this study suggests the use of 980 nm diode laser in this regard.

High-power diode lasers for optical communications applications

NASA Technical Reports Server (NTRS)

Carlin, D. B.; Goldstein, B.; Channin, D. J.

1985-01-01

High-power, single-mode, double-heterojunction AlGaAs diode lasers are being developed to meet source requirements for both fiber optic local area network and free space communications systems. An individual device, based on the channeled-substrate-planar (CSP) structure, has yielded single spatial and longitudinal mode outputs of up to 90 mW CW, and has maintained a single spatial mode to 150 mW CW. Phase-locked arrays of closely spaced index-guided lasers have been designed and fabricated with the aim of multiplying the outputs of the individual devices to even higher power levels in a stable, single-lobe, anastigmatic beam. The optical modes of the lasers in such arrays can couple together in such a way that they appear to be emanating from a single source, and can therefore be efficiently coupled into optical communications systems. This paper will review the state of high-power laser technology and discuss the communication system implications of these devices.

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

NASA Astrophysics Data System (ADS)

Zhang, Z. Y.; Oehler, A. E. H.; Resan, B.; Kurmulis, S.; Zhou, K. J.; Wang, Q.; Mangold, M.; Süedmeyer, T.; Keller, U.; Weingarten, K. J.; Hogg, R. A.

2012-06-01

High pulse repetition rate (>=10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ~2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

Evaluation of a satellite laser ranging technique using pseudonoise code modulated laser diodes

NASA Technical Reports Server (NTRS)

Ball, Carolyn Kay

1987-01-01

Several types of Satellite Laser Ranging systems exist, operating with pulsed, high-energy lasers. The distance between a ground point and an orbiting satellite can be determined to within a few centimeters. A new technique substitutes pseudonoise code modulated laser diodes, which are much more compact, reliable and less costly, for the lasers now used. Since laser diode technology is only now achieving sufficiently powerful lasers, the capabilities of the new technique are investigated. Also examined are the effects of using an avalanche photodiode detector instead of a photomultiplier tube. The influence of noise terms (including background radiation, detector dark and thermal noise and speckle) that limit the system range and performance is evaluated.

Effect of Diode Laser Irradiation Combined with Topical Fluoride on Enamel Microhardness of Primary Teeth.

PubMed

Bahrololoomi, Zahra; Lotfian, Malihe

2015-02-01

Laser irradiation has been suggested as an adjunct to traditional caries prevention methods. But little is known about the cariostatic effect of diode laser and most studies available are on permanent teeth.The purpose of the present study was to investigate the effect of diode laser irradiation combined with topical fluoride on enamel surface microhardness. Forty-five primary teeth were used in this in vitro study. The teeth were sectioned to produce 90 slabs. The baseline Vickers microhardness number of each enamel surface was determined. The samples were randomly divided into 3 groups. Group 1: 5% NaF varnish, group 2: NaF varnish+ diode laser at 5 W power and group 3: NaF varnish+ diode laser at 7 W power. Then, the final microhardness number of each surface was again determined. The data were statistically analyzed by repeated measures ANOVA at 0.05 level of significance. In all 3 groups, microhardness number increased significantly after surface treatment (P<0.05). However, Microhardness change after treatment was not significantly different among groups (P >0.05). The combined application of diode laser and topical fluoride varnish on enamel surface did not show any significant additional effect on enamel resistance to caries.

Comparative evaluation of diode laser ablation and surgical stripping technique for gingival depigmentation: A clinical and immunohistochemical study.

PubMed

Bakutra, Gaurav; Shankarapillai, Rajesh; Mathur, Lalit; Manohar, Balaji

2017-01-01

There are various treatment modalities to remove the black patches of melanin pigmentation. The aim of the study is to clinically compare the diode laser ablation and surgical stripping technique for gingival depigmentation and to evaluate their effect on the histological changes in melanocyte activity. A total of 40 sites of 20 patients with bilateral melanin hyperpigmentation were treated with the surgical stripping and diode laser ablation technique. Change in Hedin index score, change in area of pigmentation using image analyzing software, pain perception, patient preference of treatment were recorded. All 40 sites were selected for immunohistochemical analysis using HMB-45 immunohistochemical marker. At 12 months post-operative visit, in all sites, repigmentation was observed with different grades of Hedin index. Paired t -test, analysis of variance, and Chi-square tests were used for statistical analysis. Repigmentation in surgical stripping is significantly lesser compared to laser ablation. Lesser numbers of melanocytes were found on immunohistological examination at 12 months postoperatively. Comparison for patient preference and pain indices give statistically significant values for diode laser techniques. Gingival hyperpigmentation is effectively managed by diode laser ablation technique and surgical stripping method. In this study, surgical stripping technique found to be better compared to diode laser ablation.

Comparative evaluation of diode laser ablation and surgical stripping technique for gingival depigmentation: A clinical and immunohistochemical study

PubMed Central

Bakutra, Gaurav; Shankarapillai, Rajesh; Mathur, Lalit; Manohar, Balaji

2017-01-01

Introduction: There are various treatment modalities to remove the black patches of melanin pigmentation. The aim of the study is to clinically compare the diode laser ablation and surgical stripping technique for gingival depigmentation and to evaluate their effect on the histological changes in melanocyte activity. Materials and Methods: A total of 40 sites of 20 patients with bilateral melanin hyperpigmentation were treated with the surgical stripping and diode laser ablation technique. Change in Hedin index score, change in area of pigmentation using image analyzing software, pain perception, patient preference of treatment were recorded. All 40 sites were selected for immunohistochemical analysis using HMB-45 immunohistochemical marker. Results: At 12 months post-operative visit, in all sites, repigmentation was observed with different grades of Hedin index. Paired t-test, analysis of variance, and Chi-square tests were used for statistical analysis. Repigmentation in surgical stripping is significantly lesser compared to laser ablation. Lesser numbers of melanocytes were found on immunohistological examination at 12 months postoperatively. Comparison for patient preference and pain indices give statistically significant values for diode laser techniques. Conclusion: Gingival hyperpigmentation is effectively managed by diode laser ablation technique and surgical stripping method. In this study, surgical stripping technique found to be better compared to diode laser ablation. PMID:28539864

Design of a quasi-CW laser diode driver for space-based laser transmitter

NASA Astrophysics Data System (ADS)

Singh, Ravindra; Dangwal, Nishma; Chandraprakash, .; Agrawal, Lalita; Pal, Suranjan; Kamlakar, J. A.

2006-12-01

LASTEC Delhi in a joint collaborative activity with LEOS, Bangalore is developing a space qualified diode array pumped Nd:YAG laser transmitter delivering 30 mJ @ 10 pps of 10 ns duration. For space applications laser diodes are preferred because of their excellent reliability with lifetimes exceeding 100,000 hours. However, they are extremely sensitive to electro-static discharge, excessive current levels, and current spikes and transients. Small variations in bias voltage may produce large fluctuations in the current causing instability and damage to the device. Hence instead of the traditional power supplies a current controlled laser diode driver is required. This paper presents the design of a Q-CW laser diode driver based on closed loop current regulator, capable of driving 24 QCW laser diode bars each with 75W peak power at 70 A. The driver can generate up to 100 Amp peak current and 200μsec pulse width operating at 10 Hz. The current source design includes special circuits for low noise operation, slow turn-on and turn-off, circuits for over voltage and transient current protection; and good regulation. Space qualified and radiation hardened components are required to be used to sustain stringent space environment requirements during mission life of two years.

Diffractive Combiner of Single-Mode Pump Laser-Diode Beams

NASA Technical Reports Server (NTRS)

Liu, Duncan; Wilson, Daniel; Qiu, Yueming; Forouhar, Siamak

2007-01-01

An optical beam combiner now under development would make it possible to use the outputs of multiple single-mode laser diodes to pump a neodymium: yttrium aluminum garnet (Nd:YAG) nonplanar ring oscillator (NPRO) laser while ensuring that the laser operates at only a single desired frequency. Heretofore, an Nd:YAG NPRO like the present one has been pumped by a single multimode laser-diode beam delivered via an optical fiber. It would be desirable to use multiple pump laser diodes to increase reliability beyond that obtainable from a single pump laser diode. However, as explained below, simplistically coupling multiple multimode laser-diode beams through a fiber-optic combiner would entail a significant reduction in coupling efficiency, and lasing would occur at one or more other frequencies in addition to the single desired frequency. Figure 1 schematically illustrates the principle of operation of a laser-diode-pumped Nd:YAG NPRO. The laser beam path is confined in a Nd:YAG crystal by means of total internal reflections on the three back facets and a partial-reflection coating on the front facet. The wavelength of the pump beam - 808 nm - is the wavelength most strongly absorbed by the Nd:YAG crystal. The crystal can lase at a wavelength of either 1,064 nm or 1,319 nm - which one depending on the optical coating on the front facet. A thermal lens effect induced by the pump beam enables stable lasing in the lowest-order transverse electromagnetic mode (the TEM00 mode). The frequency of this laser is very stable because of the mechanical stability of the laser crystal and the unidirectional nature of the lasing. The unidirectionality is a result of the combined effects of (1) a Faraday rotation induced by an externally applied magnetic field and (2) polarization associated with non-normal incidence and reflection on the front facet.

Structure Optimization of 21,23-Core-Modified Porphyrins Absorbing Long-Wavelength Light as Potential Photosensitizers Against Breast Cancer Cells

DTIC Science & Technology

2006-04-01

recording singlet oxygen emission spectra. A diode -pumped solid-state laser (Millenia X, Spectra-Physics) at 532 nm was the excitation source. The sample...biological properties in vitro Youngjae You,a,* Scott L. Gibsonb and Michael R. Dettya aInstitute for Lasers , Photonics, and Biophotonics, Department...relative to the exciting laser beam. An additional long-pass filter (850LP) was used to attenuate the excitation laser and the fluorescence from the

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nekorkin, S. M.; Zvonkov, B. N.; Baidus, N. V.

2017-01-15

The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.

Transient behavior of an actively mode-locked semiconductor laser diode

NASA Technical Reports Server (NTRS)

Auyeung, J. C.; Bergman, L. A.; Johnston, A. R.

1982-01-01

Experimental investigation was carried out to study the transient regimes during the buildup and decay of the active mode-locked state in a laser diode. The mode locking was achieved through a sinusoidal modulation of the diode current with the laser in an external cavity. The pulse shape evolution and the time constants for the buildup and decay were determined.

Detection of gaseous oxygen using temperature tuned laser diodes

NASA Technical Reports Server (NTRS)

Fox, Curtis W.; Disimile, Peter J.

1990-01-01

The development of an optical differential absorption technique using laser diodes is discussed. The technique is being developed as a solution to overcome the difficulties imposed by conventional liquid rocket propulsion system leak detection such as damage to the engine, cumbersome equipment, and excessive amounts of time. The detection of O2 at atmospheric pressure and temperature using laser diodes is demonstrated. Also, it is shown that, by temperature tuning the laser diode, the wavelength was shifted to a level where the oxygen absorption peaks are found. The levels of transmission determined via experimental means and those calculated from spectral data are found to be in close agreement.

Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

NASA Technical Reports Server (NTRS)

Pilgrim, J. S.; Peterson, K. A.

2001-01-01

Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

Comparison of the Antibacterial Effect of 810 nm Diode Laser and Photodynamic Therapy in Reducing the Microbial Flora of Root Canal in Endodontic Retreatment in Patients With Periradicular Lesions.

PubMed

Asnaashari, Mohammad; Godiny, Mostafa; Azari-Marhabi, Saranaz; Tabatabaei, Fahimeh Sadat; Barati, Maryam

2016-01-01

The aim of this study was to compare the antibacterial efficacy of diode laser 810nm and photodynamic therapy (PDT) in reducing bacterial microflora in endodontic retreatment of teeth with periradicular lesion. In this in vivo clinical trial, 20 patients who needed endodontic retreatment were selected. After conventional chemo mechanical preparation of root canals, microbiological samples were taken with sterile paper point (PP), held in thioglycollate broth, and then were transferred to the microbiological lab. In the first group, PDT with methylene blue (MB) and diode laser (810 nm, 0.2 W, 40 seconds) was performed and in the second group diode laser (810 nm, 1.2 W, 30 seconds) was irradiated. Then second samples were taken from all canals. CFU/ml amounts showed statistically significant reduction in both groups (P < 0.001). CFU/ml amounts were compared between the two groups and there was no statistical difference. PDT and diode laser 810 nm irradiation are effective methods for root canal disinfection. PDT is a suitable alternative for diode laser 810 nm irradiation, because of lower thermal risk on root dentin.

Temperature evaluation of dental implant surface irradiated with high-power diode laser.

PubMed

Rios, F G; Viana, E R; Ribeiro, G M; González, J C; Abelenda, A; Peruzzo, D C

2016-09-01

The prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser.

2000W high beam quality diode laser for direct materials processing

NASA Astrophysics Data System (ADS)

Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

2011-11-01

This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Stabilized diode seed laser for flight and space-based remote lidar sensing applications

NASA Astrophysics Data System (ADS)

McNeil, Shirley; Pandit, Pushkar; Battle, Philip; Rudd, Joe; Hovis, Floyd

2017-08-01

AdvR, through support of the NASA SBIR program, has developed fiber-based components and sub-systems that are routinely used on NASA's airborne missions, and is now developing an environmentally hardened, diode-based, locked wavelength, seed laser for future space-based high spectral resolution lidar applications. The seed laser source utilizes a fiber-coupled diode laser, a fiber-coupled, calibrated iodine reference module to provide an absolute wavelength reference, and an integrated, dual-element, nonlinear optical waveguide component for second harmonic generation, spectral formatting and wavelength locking. The diode laser operates over a range close to 1064.5 nm, provides for stabilization of the seed to the desired iodine transition and allows for a highly-efficient, fully-integrated seed source that is well-suited for use in airborne and space-based environments. A summary of component level environmental testing and spectral purity measurements with a seeded Nd:YAG laser will be presented. A direct-diode, wavelength-locked seed laser will reduce the overall size weight and power (SWaP) requirements of the laser transmitter, thus directly addressing the need for developing compact, efficient, lidar component technologies for use in airborne and space-based environments.

Low-Cost, Single-Frequency Sources for Spectroscopy using Conventional Fabry-Perot Diode Lasers

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Commercial (uncoated) Fabry-Perot laser diodes are converted to single-frequency spectroscopy sources by passively locking the laser frequency to the band edge of a fiber Bragg grating, which phase-locks the laser oscillations through self-injection seeding.

Low-Cost, Single-Frequency Sources for Spectroscopy Using Conventional Fabry-Perot Diode Lasers

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Duerksen, Gary L.

1999-01-01

Commercial (uncoated) Fabry-Perot laser diodes are converted to single-frequency spectroscopy sources by passively locking the laser frequency to the band edge of a fiber Bragg grating, which phase-locks the laser oscillations through self-injection seeding.

Diode Lasers and Practical Trace Analysis.

ERIC Educational Resources Information Center

Imasaka, Totaro; Nobuhiko, Ishibashi

1990-01-01

Applications of lasers to molecular absorption spectrometry, molecular fluorescence spectrometry, visible semiconductor fluorometry, atomic absorption spectrometry, and atomic fluorescence spectrometry are discussed. Details of the use of the frequency-doubled diode laser are provided. (CW)

High-resolution investigation of longitudinal modes of a GaN-based blue laser diode

NASA Astrophysics Data System (ADS)

Al-Basheer, Watheq; Aljalal, Abdulaziz; Gasmi, Khaled; Adigun, Taofeek O.

2017-05-01

Typical emission spectra of GaN-based blue laser diodes are known to have irregular shapes. Hence, well-resolved study of their spectra may help in understanding the origin of their spectral shapes irregularity. In this paper, the spectra of a commercial GaN-based blue laser diode are studied as a function of injection current and temperature using a spectrometer with highresolution of 0.003-nm over the spectral region 440 - 450 nm. The obtained laser spectra are used to track the longitudinal modes evolution as a function of operating currents and temperatures as well as to precisely map single mode operation. In addition, yielded laser spectra will be utilized to evaluate few parameters related to the laser diode, such as mode spacing, optical gain, slope efficiency and threshold current at certain temperature.

[Pilot study on the use of diode laser therapy for treatment of dermatitis in koi carp (Cyprinus carpio)].

PubMed

Pees, Michael; Schmidt, V; Pees, K

2011-01-01

Therapy of dermatitis in koi using a diode laser technique. A diode laser with a wavelength of 980 nm and an energy density of 9 J/cm(2) was used to treat defined skin alterations in ten koi carp. The clinical situation after repeated laser application was recorded. In addition, the diode laser was used for surgical removal of proliferative skin alterations caused by Dermocystidium sp. in two koi ponds. An improvement of the clinical situation following laser therapy was seen in nine of the ten koi carp. Complete healing of the wound area occurred in four carp. A pronounced healing process was observed in four patients and a low healing tendency in one fish. Healing of the skin lesions following removal of the alterations caused by Dermocystidium sp. was unproblematic in one pond, whereas in the other collection a repeated treatment was necessary due to relapse of the alterations. Diode laser therapy for treatment of dermatitis in koi is a promising technique. An expedited wound healing process was seen in wound areas that were present for long periods and resistant to previous therapy attempts, including antibiotics. Wound healing was undisturbed following surgical use of the laser technique for the removal of skin proliferations. Therefore, the diode laser technique can be recommended for the treatment of dermatitis in koi, especially in cases of unsuccessful treatment using anti-infective drugs, and for the treatment of Dermocystidium infections.

Long-term efficacy of linear-scanning 808 nm diode laser for hair removal compared to a scanned alexandrite laser.

PubMed

Grunewald, Sonja; Bodendorf, Marc Oliver; Zygouris, Alexander; Simon, Jan Christoph; Paasch, Uwe

2014-01-01

Alexandrite and diode lasers are commonly used for hair removal. To date, the available spot sizes and repetition rates are defining factors in terms of penetration depth, treatment speed, and efficacy. Still, larger treatment areas and faster systems are desirable. To compare the efficacy, tolerability, and subject satisfaction of a continuously linear-scanning 808 nm diode laser with an alexandrite 755 nm laser for axillary hair removal. A total of 31 adults with skin types I-IV received 6 treatments at 4-week intervals with a 755 nm alexandrite laser (right axilla) and a continuously linear-scanning 808 nm diode laser (left axilla). Axillary hair density was assessed using a computerized hair detection system. There was a significant reduction in axillary hair after the 6th treatment (P < 0.05) on both sides (left, 808 nm: hair clearance of 72.16%; right, 755 nm: hair clearance of 71.30%). The difference in reduction between the two lasers was not significant, but both were persistant at 18 months follow-up (left: hair clearance of 73.71%; right: hair clearance of 71.90%). Erythema and perifollicular edema were more common after alexandrite laser treatment, but all side effects were transient. While 62.50% of patients reported more pain in response to treatment with the new diode laser, all patients rated treatment with either laser tolerable. Treatment with either the alexandrite or the linear-scanning diode laser results in significant, comparable, persistent (at least 18 months) axillary hair reduction among individuals with skin types I-IV. © 2013 Wiley Periodicals, Inc.

An in vitro antifungal efficacy of silver nanoparticles activated by diode laser to Candida albicans

NASA Astrophysics Data System (ADS)

Astuti, S. D.; Kharisma, D. H.; Kholimatussa'diah, S.; Zaidan, A. H.

2017-09-01

Microbial infectious diseases and increased resistance to antibiotics become urgent problems requiring immediate solutions. One promising alternative is the using of silver nanoparticles. The combination of the microbial inhibition characteristic of silver nanotechnology enhances the activity of antimicrobial effect. This study aims to determine effectiveness of antifungal silver nanoparticles with the activation of the diode laser on Candida albicans. The samples were culture of Candida albicans. Candida albicans cultures were incubated with silver nanoparticles (concentration 10-4 M) and treated with various exposure time of diode laser (15, 30, 45, 60, 75, 90)s. The suspension was planted on Sabouraud Dextrone Agar sterile media and incubated for 24 hours at temperature of 37oC. The number of colony-forming units per milliliter (CFU/ml) was determined after incubation. The results were log-transformed and analyzed by analysis of variance (ANOVA). In this analysis, P value ≤0.05 was considered to indicate a statistically significant difference. The result of this study showed the quantum yield of silver nanoparticles with diode laser 450 nm was 63,61%. Irradiating with diode laser 450 nm for 75 s resulted in the highest decreasing percentage of Candida albicans viability 65,03%. Irradiating with diode laser 450 nm 75 s with silver nanoparticles resulted in the higest decreasing percentage of Candida albicans viability 84,63%. Therefore, silver nanoparticles activated with diode laser irradiation of 450 nm resulted antifungal effect to Candida albicans viability.

Post-mortem characterization of fs laser-generated micro-pillars in Li(Ni1/3Mn1/3Co1/3)O2 electrodes by laser-induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

Smyrek, P.; Zheng, Y.; Seifert, H. J.; Pfleging, W.

2016-03-01

NMC thick films were prepared by tape-casting and subsequent ultrafast laser-structuring. The lithium distribution in electrochemically cycled and unstructured or fs laser-structured NMC cathodes was investigated by using Laser-Induced Breakdown Spectroscopy (LIBS). The main goal is to develop an optimized three dimensional cell architecture with improved electrochemical properties based on studies of the homogeneity of the local State-of-Charge. LIBS experiments were carried out using a LIBS workstation equipped with a mode-locked diode pumped solid state Nd:YAG laser operating at a wavelength of 1063 nm. The element distribution was investigated using two different techniques: element mapping and element depth-profiling of the unstructured / fs laser-structured electrode surface. Results achieved from post-mortem studies using LIBS will be presented.

Clinical Evaluation of Nd:YAG and 685-nm Diode Laser Therapy for Desensitization of Teeth with Gingival Recession

PubMed Central

Canakci, Varol; Ozdemir, Atilla; Kaya, Yavuz

2009-01-01

Abstract Objectives: The aim of this study was to evaluate the effectiveness of two types of lasers, the Nd:YAG laser and the 685-nm diode laser, as dentin desensitizers as well as both the immediate and late therapeutic effects on teeth with gingival recession. Materials and Methods: The study was conducted on 56 teeth in 14 patients with Miller's class 1 and 2 gingival recession with clinically elicitable dentin hypersensitivity (DH). The patients were divided into two groups: a Nd:YAG-laser-treated group and a 685-nm diode laser-treated group. DH was assessed by means of an air stimulus, and a visual analog scale (VAS) was used to measure DH. The selected teeth in the two groups received laser therapy for three sessions. Teeth subjected to Nd:YAG-laser treatment were irradiated at 1 W and 10 Hz for 60 sec at 1064 nm, and those receiving 685-nm diode laser treatment were irradiated at 25 mW and 9 Hz for 100 sec. Results: Significant reductions in DH occurred at all time points measured during the three treatment sessions in both treatment groups. Comparing the means of the responses in the three treatment sessions for the two groups revealed that the Nd:YAG laser group had a higher degree of desensitization compared to the other group (p < 0.01). The immediate and late therapeutic effects of the Nd:YAG laser were more evident than those of the 685-nm diode laser. Conclusions: Both of these lasers can be used to reduce DH without adverse effects. Desensitization of teeth with gingival recession with the Nd:YAG laser was more effective than with the diode laser. The Nd:YAG laser appears to be a promising new tool for successfully reducing DH. PMID:19281413

New laser materials for laser diode pumping

NASA Technical Reports Server (NTRS)

Jenssen, H. P.

1990-01-01

The potential advantages of laser diode pumped solid state lasers are many with high overall efficiency being the most important. In order to realize these advantages, the solid state laser material needs to be optimized for diode laser pumping and for the particular application. In the case of the Nd laser, materials with a longer upper level radiative lifetime are desirable. This is because the laser diode is fundamentally a cw source, and to obtain high energy storage, a long integration time is necessary. Fluoride crystals are investigated as host materials for the Nd laser and also for IR laser transitions in other rare earths, such as the 2 micron Ho laser and the 3 micron Er laser. The approach is to investigate both known crystals, such as BaY2F8, as well as new crystals such as NaYF8. Emphasis is on the growth and spectroscopy of BaY2F8. These two efforts are parallel efforts. The growth effort is aimed at establishing conditions for obtaining large, high quality boules for laser samples. This requires numerous experimental growth runs; however, from these runs, samples suitable for spectroscopy become available.

11-kW direct diode laser system with homogenized 55 × 20 mm2 Top-Hat intensity distribution

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Noeske, Axel; Kindervater, Tobias; Wessollek, Armin; Brand, Thomas; Biesenbach, Jens

2007-02-01

In comparison with other laser systems diode lasers are characterized by a unique overall efficiency, a small footprint and high reliability. However, one major drawback of direct diode laser systems is the inhomogeneous intensity distribution in the far field. Furthermore the output power of current commercially available systems is limited to about 6 kW. We report on a diode laser system with 11 kW output power at a single wavelength of 940 nm aiming for customer specific large area treatment. To the best of our knowledge this is the highest output power reported so far for a direct diode laser system. In addition to the high output power the intensity distribution of the laser beam is homogenized in both axes leading to a 55 x 20 mm2 Top-Hat intensity profile at a working distance of 400 mm. Homogeneity of the intensity distribution is better than 90%. The intensity in the focal plane is 1 kW/cm2. We will present a detailed characterization of the laser system, including measurements of power, power stability and intensity distribution of the homogenized laser beam. In addition we will compare the experimental data with the results of non-sequential raytracing simulations.

Systematic review of the adjunctive use of diode and Nd:YAG lasers for nonsurgical periodontal instrumentation.

PubMed

Roncati, Marisa; Gariffo, Annalisa

2014-04-01

The aims of this study were (1) to conduct a literature search and systematically evaluate the additional therapeutic effects of pulsed Nd:YAG or diode laser use in patients with periodontitis, (2) to assess evidence supporting the additional benefit of laser-mediated periodontal treatment in conjunction with scaling and root planning (SRP) (not as monotherapy), and (3) to interpret the evidence presented in retrieved publications. Opinions about the additional use of diode lasers in the nonsurgical treatment of plaque-induced periodontal lesions are conflicting. The April 2011 American Academy of Periodontology's "Statement on the Efficacy of Lasers in the Non-Surgical Treatment of Inflammatory Periodontal Disease" asserted that the use of a laser as monotherapy or in addition to nonsurgical periodontal instrumentation conveyed no advantage. After initial screening, 23/77 potentially relevant articles and abstracts identified through electronic and manual searches of the MEDLINE(®)/PubMed database and the Cochrane Central Register of Controlled Trials (1990-2012) were included in this review. A meta-analysis could be performed. The results indicate that Nd:YAG or diode laser, used in an adjunctive capacity to SRP, may provide some additional benefit, in 6 month studies, compared with mechanical debridement. The results show the adjunctive benefits that diode laser treatment can provide when it is used as an adjunct to nonsurgical periodontal treatment in adults with chronic periodontitis. Further long-term, well-designed, parallel randomized clinical trials are needed to assess the effectiveness of the adjunctive use of the diode laser, as well as the appropriate dosimetry and laser settings.

Computer-Assisted Experiments with a Laser Diode

ERIC Educational Resources Information Center

Kraftmakher, Yaakov

2011-01-01

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The "h/e" ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a…

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Novel diode laser-based sensors for gas sensing applications

NASA Technical Reports Server (NTRS)

Tittel, F. K.; Lancaster, D. G.; Richter, D.

2000-01-01

The development of compact spectroscopic gas sensors and their applications to environmental sensing will be described. These sensors employ mid-infrared difference-frequency generation (DFG) in periodically poled lithium niobate (PPLN) crystals pumped by two single-frequency solid state lasers such as diode lasers, diode-pumped solid state, and fiber lasers. Ultrasensitive, highly selective, and real-time measurements of several important atmospheric trace gases, including carbon monoxide, nitrous oxide, carbon dioxide, formaldehyde [correction of formaldehye], and methane, have been demonstrated.

Diode Lasers and Light Emitting Diodes Operating at Room Temperature with Wavelengths Above 3 Micrometers

DTIC Science & Technology

2011-11-29

as an active region of mid - infrared LEDs. It should be noted that active region based on interband transition is equally useful for both laser and...IR LED technology for infrared scene projectors”, Dr. E. Golden, Air Force Research Laboratory, Eglin Air Force Base .  “A stable mid -IR, GaSb...multimode lasers. Single spatial mode 3-3.2 J.lm diode lasers were developed. LEDs operate at wavelength above 4 J.lm at RT. Dual color mid - infrared

Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1998-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings (FBG) has been achieved by two methods: (1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element; (2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Computer Processing Of Tunable-Diode-Laser Spectra

NASA Technical Reports Server (NTRS)

May, Randy D.

1991-01-01

Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.

Advances in single mode and high power AlGaInN laser diode technology for systems applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Michal; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Smalc-Koziorowska, Julita; Stanczyk, Szymon; Watson, Scott; Kelly, Antony E.

2015-03-01

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

AlGaInN laser diode technology for systems applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bockowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-02-01

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.

Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers

NASA Astrophysics Data System (ADS)

Chen, J. X.; Li, A. Z.; Chen, Y. Q.; Guo, F. M.; Lin, C.; Zhang, Y. G.; Qi, M.

2001-07-01

Lasers with emission wavelength of 1.8-2.1 μm offer many important applications to laser spectroscopy, eye-safe medical care and trace chemical detection. Strained InGaAs/InGaAsP structures on InP substrates have been reported as an alternative approach for the development of semiconductor laser diodes in the spectral range 1.8-2.1 μm due to the superior InP substrate quality and mature processing technology. In this paper we report the fabrication and performances of InGaAs/InGaAsP/InP strained quantum well lasers grown by gas source molecular beam epitaxy. The diodes show good I- V characteristics, and the typical turn-on voltage at room temperature is around 0.4-0.5 V. A threshold current of about 120 mA is achieved for a chip with 500 μm cavity length and 4.5 μm stripe width. The maximum output power with 10% duty cycle is 18 mW. The main peak of the laser spectrum is located at 1.84 μm.

Use of high-power diode lasers for hardening and thermal conduction welding of metals

NASA Astrophysics Data System (ADS)

Klocke, Fritz; Demmer, Axel; Zaboklicki, A.

1997-08-01

CO2 and Nd:YAG high power lasers have become established as machining tools in industrial manufacturing over the last few years. The most important advantages compared to conventional processing techniques lie in the absence of forces introduced by the laser into the workpiece and in the simple arid highly accurate control in terms ofpositioning and timing making the laser a universally applicable, wear-free and extremely flexible tool /1,2/. The laser can be utilised costeffectively in numerous manufacturing processes but there are also further applications for the laser which produce excellent results from a technical point of view, but are not justified in terms of cost. The extensive use of lasers, particularly in small companies and workshops, is hindered by two main reasons: the complexity and size ofthe laser source and plant and the high investment costs /3/. A new generation of lasers, the high power diode lasers (HDL), combines high performance with a compact design, making the laser a cheap and easy to use tool with many applications /3,4,5,6/. In the diode laser, the laser beam is generated by a microelectronic diode which transforms electrical energy directly into laser energy. Diode lasers with low power outputs have, for some time, been making their mark in our everyday lives: they are used in CD players, laser printers and scanners at cash tills. Modern telecommunications would be impossible without these lasers which enable information to be transmitted in the form oflight impulses through optical fibres. They can also be found in compact precision measurement instrumentation - range fmders, interferometers and pollutant analysis devices /3,6/. In the field of material processing, the first applications ofthe laser, such as for soldering, inscribing, surface hardening and plastic or heat conduction welding, will exceed the limits ofthe relatively low performance output currently available. The diode laser has a shorter wavelength than the CO2 and Nd:YAG lasers making it more favourable in terms ofthe absorption behaviour ofthe laser beam - an advantage that will soon have a significant effect on the range of its applications.

Quantum Noise in Laser Diodes

NASA Technical Reports Server (NTRS)

Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

1996-01-01

We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

Clinical application of a new 0.63- to 0.65-μm pulse diode laser in treating ear, throat, and nose diseases in adults and children

NASA Astrophysics Data System (ADS)

Nasedkin, Alexy N.; Pletnev, A. S.

2001-04-01

An investigation was made of applying a pulsed diode laser emitting at the wavelengths of 0.63 to 0.65 micrometers to treat various otolaryngological diseases, such as rhinosinusitis, acute rhinitis, vasomotor rhinitis, allergic rhinitis, the illness of the lymphoid ring, adenoiditis, chronic tonsillitis, pharyngitis, and catarrhal and suppurative otitis. The therapeutic effect produced by the pulsed diode laser was compared with that of conventional therapeutic lasers. It was found that the pulsed low-intensity laser radiation in the red spectrum region offered a number of advantages over conventional laser therapeutic techniques.

Laser diode initiated detonators for space applications

NASA Technical Reports Server (NTRS)

Ewick, David W.; Graham, J. A.; Hawley, J. D.

1993-01-01

Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

Theoretical model for frequency locking a diode laser with a Faraday cell

NASA Technical Reports Server (NTRS)

Wanninger, P.; Shay, T. M.

1992-01-01

A new method was developed for frequency locking a diode lasers, called 'the Faraday anomalous dispersion optical transmitter (FADOT) laser locking', which is much simpler than other known locking schemes. The FADOT laser locking method uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. The FADOT method is vibration insensitive and exhibits minimal thermal expansion effects. The system has a frequency pull in the range of 443.2 GHz (9 A). The method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters.

Intraindividual comparison of 1,470 nm diode laser versus carbon dioxide laser for tonsillotomy: a prospective, randomized, double blind, controlled feasibility trial.

PubMed

Havel, Miriam; Sroka, Ronald; Englert, Elsa; Stelter, Klaus; Leunig, Andreas; Betz, Christian S

2012-09-01

The need for reduction of post-tonsillectomy hemorrhage has led to promotion of tonsillotomy techniques for tonsil tissue reduction in obstructive tonsillar hypertrophy. This trial compares ablative tissue effects using 1,470 nm diode laser and carbon dioxide laser for tonsillotomy in an intraindividual design. 21 children aged 3-13 years (mean age 6.3 years) underwent laser tonsillotomy for obstructive tonsillar hypertrophy in this double blind, prospective, randomized, clinical feasibility trial. In each of the blinded patients, tonsillotomy was performed using fiber guided 1,470 nm diode laser (contact mode, 15 W power) on the one side and carbon dioxide laser (12 W power) on the other side. An independent, blinded physician documented clinical presentation and patients' symptoms preoperatively and on Days 1, 3, 7, 14, and 21 post-operatively using standardized questionnaire including VAS for each side separately. The mean duration of operative treatment was 2.7 min using 1,470 nm laser and 4.9 min using carbon dioxide laser respectively. Intraoperative bleeding and the frequency of bipolar forceps use for intraoperative bleeding control was significantly less using 1,470 nm diode laser system. There was no difference in post-operative pain scores between the carbon dioxide laser treated and the 1,470 nm fiber guided diode laser treated side. No infections, hemorrhages or other complications occurred in the course of the 3 weeks post-operative period. A fiber-guided 1,470 nm diode laser system offers an efficient and safe method for tonsillotomy as treatment of obstructive tonsillar hypertrophy. Compared to our standard practice (carbon dioxide laser), 1,470 nm laser application provides comparable tissue ablation effects with less intraoperative bleeding and shorter operation time. Copyright © 2012 Wiley Periodicals, Inc.

High-efficiency high-brightness diode lasers at 1470 nm/1550 nm for medical and defense applications

NASA Astrophysics Data System (ADS)

Gallup, Kendra; Ungar, Jeff; Vaissie, Laurent; Lammert, Rob; Hu, Wentao

2012-03-01

Diode lasers in the 1400 nm to 1600 nm regime are used in a variety of applications including pumping Er:YAG lasers, range finding, materials processing, aesthetic medical treatments and surgery. In addition to the compact size, efficiency, and low cost advantages of traditional diode lasers, high power semiconductor lasers in the eye-safe regime are becoming widely used in an effort to minimize the unintended impact of potentially hazardous scattered optical radiation from the laser source, the optical delivery system, or the target itself. In this article we describe the performance of high efficiency high brightness InP laser bars at 1470nm and 1550nm developed at QPC Lasers for applications ranging from surgery to rangefinding.

A 1,470 nm diode laser in stapedotomy: Mechanical, thermal, and acoustic effects.

PubMed

Koenraads, Simone P C; de Boorder, Tjeerd; Grolman, Wilko; Kamalski, Digna M A

2017-08-01

Multiple laser systems have been investigated for their use in stapes surgery in patients with otosclerosis. The diode 1,470 nm laser used in this study is an attractive laser system because it is easily transported and relatively inexpensive in use. This wavelength has relative high absorption in water. This study aimed to investigate the mechanical, thermal, and acoustic effects of the diode 1,470 nm laser on a stapes in an inner ear model. Experiments were performed in an inner ear model including fresh frozen human stapes. High-speed imaging with frame rates up to 2,000 frames per second (f/s) was used to visualize the effects in the vestibule during fenestration of the footplate. A special high-speed color Schlieren technique was used to study thermal effects. The sound produced by perforation was recorded by a hydrophone. Single pulse settings of the diode 1,470 nm laser were 100 ms, 3 W. Diode 1,470 nm laser fenestration showed mechanical effects with small vapor bubbles and pressure waves pushed into the vestibule. Thermal imaging visualized an increase temperature underneath the stapes footplate. Acoustic effects were limited, but larger sounds levels were reached when vaporization bubbles arise and explode in the vestibule. The diode 1,470 nm laser highly absorbs in perilymph and is capable of forming a clear fenestration in the stapes. An overlapping laser pulse will increase the risk of vapor bubbles, pressure waves, and heating the vestibule. As long as we do not know the possible damage of these effects to the inner ear function, it seems advisable to use the laser with less potential harm. Lasers Surg. Med. 49:619-624, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Advanced optical manufacturing and testing; Proceedings of the Meeting, San Diego, CA, July 9-11, 1990

NASA Astrophysics Data System (ADS)

Sanger, Gregory M.; Reid, Paul B.; Baker, Lionel R.

1990-11-01

Consideration is given to advanced optical fabrication, profilometry and thin films, and metrology. Particular attention is given to automation for optics manufacturing, 3D contouring on a numerically controlled grinder, laser-scanning lens configurations, a noncontact precision measurement system, novel noncontact profiler design for measuring synchrotron radiation mirrors, laser-diode technologies for in-process metrology, measurements of X-ray reflectivities of Au-coatings at several energies, platinum coating of an X-ray mirror for SR lithography, a Hilbert transform algorithm for fringe-pattern analysis, structural error sources during fabrication of the AXAF optical elements, an in-process mirror figure qualification procedure for large deformable mirrors, interferometric evaluation of lenslet arrays for 2D phase-locked laser diode sources, and manufacturing and metrology tooling for the solar-A soft X-ray telescope.

Fragmentation of salivary stones with a 980nm diode laser.

PubMed

Luers, Jan Christoffer; Petry-Schmelzer, Jan Niklas; Hein, Wolfgang G; Gostian, Antoniu-Oreste; Hüttenbrink, Karl-Bernd; Beutner, Dirk

2014-02-01

Intraductal laser lithotripsy is a preferred method to fragment large, immobile intraglandular salivary stones. A number of different laser systems has been investigated for this purpose. It was our aim to study the effectiveness of a 980nm diode laser when fragmenting salivary stones in an experimental set up. In an experimental set up we used a 980nm diode laser for the lithotripsy of 9 salivary stones. The temperature circle around the laser fibre tip was measured and stone remnants were chemically analysed for their composition. The salivary stones had a mean diameter of 6.7mm×5.6mm×3.0mm. Laser fragmentation with the diode laser was successful at all stones. The temperature next to the salivary stone increased to around 30°C during the active lithotripsy with continuous rinsing (fluid temperature 21°C). At a distance of 2mm the temperature around the laser fibre's tip is reduced by already about 50%. The salivary stones mainly consisted of carbonate apatite, followed by β-calcium phosphate and other calcium phosphates. The fragmentation of salivary stones with a 980nm diode laser is possible in principle. Under a continuous irrigation with a positioning of the laser fibre's tip at the centre of the stone, no relevant temperature increase in the vicinity of the stone occurs. However, before the laser is used in humans, in vivo experiments on animal material seem to be advisable. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

SUBTHRESHOLD MICROPULSE DIODE LASER VERSUS CONVENTIONAL LASER PHOTOCOAGULATION FOR DIABETIC MACULAR EDEMA: A Meta-Analysis of Randomized Controlled Trials.

PubMed

Chen, Guohai; Tzekov, Radouil; Li, Wensheng; Jiang, Fangzheng; Mao, Sihong; Tong, Yuhua

2016-11-01

To evaluate the relative efficacy of subthreshold micropulse diode laser versus conventional laser photocoagulation for the treatment of diabetic macular edema. A comprehensive literature search was conducted to find relevant randomized controlled trials (RCTs). Efficacy estimates were determined by comparing weighted mean differences of the mean change of best-corrected visual acuity and central macular thickness from baseline. Six RCTs were selected for this meta-analysis, including 398 eyes (203 eyes in the subthreshold micropulse diode laser group and 195 eyes in the conventional laser group). Subthreshold micropulse diode laser was superior to conventional laser in terms of mean change of logMAR best-corrected visual acuity at 3, 9, and 12 months after treatment (P = 0.02; P = 0.04, and P = 0.03, respectively), and it showed a similar trend at 6 months (P = 0.05). Although, there was no significant difference in terms of mean change in central macular thickness from baseline to 3, 6, 9, or 12 months (P = 0.80; P = 0.20; P = 0.88, and P = 0.86, respectively). Subthreshold micropulse diode laser treatment resulted in better visual acuity compared with conventional laser, although the differences before 12 months are likely to be too small to be of clinical relevance and may be dependent on baseline best-corrected visual acuity. The two types of treatment seem to have similar anatomical outcome.

Effects of 980 diode laser treatment combined with scaling and root planing on periodontal pockets in chronic periodontitis patients

NASA Astrophysics Data System (ADS)

Fallah, Alireza

2010-02-01

Objective: This study compared the effect of 980 Diode laser + scaling and root planing (SRP) versus SRP alone in the treatment of chronic periodontitis. Method: 21 healthy patients with moderate periodontitis with a probing depth of at least 5mm were included in the study. A total of 42 sites were treated during 6weeks with a combination of 980 Diode laser and SRP (21 sites) or SRP alone (21 sites). The gingival index (GI), probing pocket depth (PPD) and bleeding on probing (BOP) were examined at the baseline and after 6 weeks after the start of treatment. Results: Both groups showed statistically significant improvements in GI, BOP and PPD after treatment. The results also showed significant improvement from laser+ SRP group to SRP alone group. Conclusion: The present data suggest that treatment of chronic periodontitis with either 980 Diode laser + SRP or SRP alone results in statistically significant improvements in the clinical parameters. The combination of 980 Diode laser irradiation in the gingival sulcus and SRP, was significantly better as compared to SRP alone.

Wavelength-agile diode-laser sensing strategies for monitoring gas properties in optically harsh flows: application in cesium-seeded pulse detonation

NASA Astrophysics Data System (ADS)

Sanders, Scott Thomas; Mattison, Daniel W.; Ma, Lin; Jeffries, Jay B.; Hanson, Ronald K.

2002-06-01

The rapid, broad wavelength scanning capabilities of advanced diode lasers allow extension of traditional diode-laser absorption techniques to high pressure, transient, and generally hostile environments. Here, we demonstrate this extension by applying a vertical cavity surface-emitting laser (VCSEL) to monitor gas temperature and pressure in a pulse detonation engine (PDE). Using aggressive injection current modulation, the VCSEL is scanned through a 10 cm-1 spectral window at megahertz rates roughly 10 times the scanning range and 1000 times the scanning rate of a conventional diode laser. The VCSEL probes absorption lineshapes of the ~ 852 nm D2 transition of atomic Cs, seeded at ~ 5 ppm into the feedstock gases of a PDE. Using these lineshapes, detonated-gas temperature and pressure histories, spanning 2000 4000 K and 0.5 30 atm, respectively, are recorded with microsecond time response. The increasing availability of wavelength-agile diode lasers should support the development of similar sensors for other harsh flows, using other absorbers such as native H2O.

Evaluation of temperature change during antimicrobial photodynamic therapy with two different photosensitizers in dental caries.

PubMed

Mirzaie, Mansoreh; Yassini, Esmael; Ashnagar, Sajjad; Hadadi, Azadeh; Chiniforush, Nasim

2016-06-01

Many attempts have been made in elimination of bacteria in infected and demineralized dentin to not only provide efficient bactericidal potential, but to have minimal damage for tooth structure. The aim of this study was to assess the temperature change during aPDT with ICG and TBO compared with conventional Diode laser irradiation. 48 premolar teeth which were selected for this study. A class I cavity was drilled in each teeth, with dimensions of 2mm width, 4mm length and depth of 2.5-3.5mm, providing a dentinal wall of approximately 0.5mm for pulp chamber. Then teeth were randomly allocated in 4 experimental groups (n=12); Group 1: TBO+LED, Group 2: ICG+Diode Laser, Group 3: Diode laser with output power of 0.5W, Group 4: Diode laser with output power of 1W. Thermocouple device was held by experimenter hand and the sensor was in pulp chamber of the teeth. Heat generated during irradiation was reported on LCD screen by NUX Plus software. Repeated measure ANOVA was used in order to compare the temperature before and after laser application. Tukey HSD was used to compare the results between groups. Temperature was risen for about 0.54±0.05°C for group 1, 1.67±0.14°C for group 2, 4.21±0.83°C for group 3, and 4. 50±0.32°C for group 4. The difference between group 1 & 2, 1 & 3 and 1 & 4 was significant (p<0.0001). According to results of this study, Diode (with or without photosensitizer- 0.5 and 1W) can be safely used as alternative approach for disinfection after caries removal in thermal point of view. Copyright © 2016. Published by Elsevier B.V.

Improving Lifetime of Quasi-CW Laser Diode Arrays for Pumping 2-Micron Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Singh, Upendra N.; Kavaya, Michael J.

2007-01-01

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data on the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

PubMed

Jackson, Stuart D

2009-08-01

A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

NASA Technical Reports Server (NTRS)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Four channel Laser Firing Unit using laser diodes

NASA Technical Reports Server (NTRS)

Rosner, David, Sr.; Spomer, Edwin, Sr.

1994-01-01

This paper describes the accomplishments and status of PS/EDD's (Pacific Scientific/Energy Dynamics Division) internal research and development effort to prototype and demonstrate a practical four channel laser firing unit (LFU) that uses laser diodes to initiate pyrotechnic events. The LFU individually initiates four ordnance devices using the energy from four diode lasers carried over the fiber optics. The LFU demonstrates end-to-end optical built in test (BIT) capabilities. Both Single Fiber Reflective BIT and Dual Fiber Reflective BIT approaches are discussed and reflection loss data is presented. This paper includes detailed discussions of the advantages and disadvantages of both BIT approaches, all-fire and no-fire levels, and BIT detection levels. The following topics are also addressed: electronic control and BIT circuits, fiber optic sizing and distribution, and an electromechanical shutter type safe/arm device. This paper shows the viability of laser diode initiation systems and single fiber BIT for typing military applications.

Blue laser diode (450 nm) systems for welding copper

NASA Astrophysics Data System (ADS)

Silva Sa, M.; Finuf, M.; Fritz, R.; Tucker, J.; Pelaprat, J.-M.; Zediker, M. S.

2018-02-01

This paper will discuss the development of high power blue laser systems for industrial applications. The key development enabling high power blue laser systems is the emergence of high power, high brightness laser diodes at 450 nm. These devices have a high individual brightness rivaling their IR counterparts and they have the potential to exceed their performance and price barriers. They also have a very high To resulting in a 0.04 nm/°C wavelength shift. They have a very stable lateral far-field profile which can be combined with other diodes to achieve a superior brightness. This paper will report on the characteristics of the blue laser diodes, their integration into a modular laser system suitable for scaling the output power to the 1 kW level and beyond. Test results will be presented for welding of copper with power levels ranging from 150 Watts to 600 Watts

[Laservaporization of the prostate: current status of the greenlight and diode laser].

PubMed

Rieken, M; Bachmann, A; Gratzke, C

2013-03-01

In the last decade laser vaporization of the prostate has emerged as a safe and effective alternative to transurethral resection of the prostate (TURP). This was facilitated in particular by the introduction of photoselective vaporization of the prostate (PVP) with a 532 nm 80 W KTP laser in 2002. Prospective randomized trials comparing PVP and TURP with a maximum follow-up of 3 years mostly demonstrated comparable functional results. Cohort studies showed a safe application of PVP in patients under oral anticoagulation and with large prostates. Systems from various manufacturers with different maximum power output and wavelengths are now available for diode laser vaporization of the prostate. Prospective randomized trials comparing diode lasers and TURP are not yet available. In cohort studies and comparative studies PVP diode lasers are characterized by excellent hemostatic properties but functional results vary greatly with some studies reporting high reoperation rates.

Fibre-coupled red diode-pumped Alexandrite TEM00 laser with single and double-pass end-pumping

NASA Astrophysics Data System (ADS)

Arbabzadah, E. A.; Damzen, M. J.

2016-06-01

We report the investigation of an Alexandrite laser end-pumped by a fibre-coupled red diode laser module. Power, efficiency, spatial, spectral, and wavelength tuning performance are studied as a function of pump and laser cavity parameters. It is the first demonstration, to our knowledge, of greater than 1 W power and also highest laser slope efficiency (44.2%) in a diode-pumped Alexandrite laser with diffraction-limited TEM00 mode operation. Spatial quality was excellent with beam propagation parameter M 2 ~ 1.05. Wavelength tuning from 737-796 nm was demonstrated using an intracavity birefringent tuning filter. Using a novel double pass end-pumping scheme to get efficient absorption of both polarisation states of the scrambled fibre-delivered diode pump, a total output coupled power of 1.66 W is produced in TEM00 mode with 40% slope efficiency.

Diode laser based resonance ionization mass spectrometric measurement of strontium-90

NASA Astrophysics Data System (ADS)

Bushaw, B. A.; Cannon, B. D.

1997-10-01

A diode laser based scheme for the isotopically selective excitation and ionization of strontium is presented. The double-resonance excitation 5s 21S 0→5s5p 3P 1→5s6s 3S 1 is followed by photoionization at 488 nm. The isotope shifts and hyperfine structure in the resonance transitions have been accurately measured for the stable isotopes and 90Sr, with the measurement of the 90Sr shifts using sub-pg samples. Analytical tests, using graphite crucible atomization, demonstrated 90Sr detection limits of 0.8 fg and overall (optical+mass spectrometer) isotopic selectivity of >10 10 against stable strontium.

3.1 W narrowband blue external cavity diode laser

NASA Astrophysics Data System (ADS)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

760nm: a new laser diode wavelength for hair removal modules

NASA Astrophysics Data System (ADS)

Wölz, Martin; Zorn, Martin; Pietrzak, Agnieszka; Kindsvater, Alex; Meusel, Jens; Hülsewede, Ralf; Sebastian, Jürgen

2015-02-01

A new high-power semiconductor laser diode module, emitting at 760 nm is introduced. This wavelength permits optimum treatment results for fair skin individuals, as demonstrated by the use of Alexandrite lasers in dermatology. Hair removal applications benefit from the industry-standard diode laser design utilizing highly efficient, portable and light-weight construction. We show the performance of a tap-water-cooled encapsulated laser diode stack with a window for use in dermatological hand-pieces. The stack design takes into account the pulse lengths required for selectivity in heating the hair follicle vs. the skin. Super-long pulse durations place the hair removal laser between industry-standard CW and QCW applications. The new 760 nm laser diode bars are 30% fill factor devices with 1.5 mm long resonator cavities. At CW operation, these units provide 40 W of optical power at 43 A with wall-plug-efficiency greater than 50%. The maximum output power before COMD is 90 W. Lifetime measurements starting at 40 W show an optical power loss of 20% after about 3000 h. The hair removal modules are available in 1x3, 1x8 and 2x8 bar configurations.

Diode pumped Nd:YAG laser development

NASA Technical Reports Server (NTRS)

Reno, C. W.; Herzog, D. G.

1976-01-01

A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

Narrow-linewidth tunable laser working at 633 nm suitable for industrial interferometry

NASA Astrophysics Data System (ADS)

Minh, Tuan Pham; Hucl, Václav; Čížek, Martin; Mikel, Břetislav; Hrabina, Jan; Řeřucha, Šimon; Číp, Ondřej; Lazar, Josef

2015-05-01

Semiconductor lasers found a foothold in many fields of human activities, mainly thanks to its small size, low cost and high energy efficiency. Recent methods for accurate distance measurement in industrial practice use principles of laser interferometry, which are based on lasers operating in the visible spectrum. When the laser beam is visible the alignment of the industrial interferometer makes the measuring process easier. Traditional lasers for these purposes for many decades - HeNe gas laser - have superb coherence properties but small tunable range. On the other hand laser diodes are very useful lasers but only if the active layer of the semiconductor equips with a passive selective element that will increase the quality of their own resonator and also prevents the structure of its higher longitudinal modes. The main aim of the work is a design of the laser source based on a new commercial available laser diode with Distributed Bragg Reflector structure, butterfly package and fibre coupled output. The ultra-low noise injection current source, stable temperature controller and supply electronic equipment were developed with us and experimentally tested with this laser for the best performances required of the industrial interferometry field. The work also performs a setup for frequency noise properties investigation with an unbalanced fibre based Mach-Zehnder interferometer and 10 m long fibre spool inserted in the reference arm. The work presents the way to developing the narrow-linewidth operation the DBR laser with the wide tunable range up to more than 1 nm of the operation wavelength at the same time. Both capabilities predetermine this complex setup for the industrial interferometry application as they are the long distance surveying or absolute scale interferometry.

High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks

NASA Technical Reports Server (NTRS)

Kim, Jae-Hoon; Lin, Steven H.

1991-01-01

High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.

Evaluation of antimicrobial and thermal effects of diode laser on root canal dentin.

PubMed

Kıvanc, B H; Arısu, H D; Sağlam, B C; Akça, G; Gürel, M A; Görgül, G

2017-12-01

The aim of this study was to evaluate the antimicrobial effects of diode laser and temperature rise on the root surface during application. Thirty-six teeth were chemomechanically prepared and irrigated with 2.5% sodium hypochlorite and 17% ethylenediaminetetraacetic acid, and then autoclaved and incubated with a suspension of Enterococcus faecalis. The specimens were randomly divided into three groups (n = 12): Group 1, irradiated by diode laser at 1.2 W; Group 2, irradiated by diode laser at 2 W; and Group 3, irradiated by diode laser at 3 W. The grown bacteria were counted and the mean numbers of the each test tube were determined. The temperature was measured on the external apical third of the root during laser application. The mean values of results for each group were compared using one-way analysis of variance and Tukey test. No significant difference was obtained among the test groups in terms of the colony counts (P > 0.05). According to the temperature changes, there was a significant difference between groups (P < 0.05). Temperature rises were 16.79°C, 10.20°C, and 6.25°C in Group 3, Group 2, and Group 1, respectively. Diode laser irradiation with 1.2 W demonstrated comparable performance with 2 W and 3 W power sets for elimination of E. faecalis from root canal with less temperature rise.

Comparative scanning electron microscope analysis of diode laser and desensitizing toothpastes for evaluation of efficacy of dentinal tubular occlusion.

PubMed

Reddy, Guntakala Vikram; Akula, Sushma; Malgikar, Suryakanth; Babu, Palaparthy Raja; Reddy, Gooty Jagadish; Josephin, Johnson Juliet

2017-01-01

The present study aims to evaluate the efficacy of diode laser alone and in combination with desensitizing toothpastes in occluding dentinal tubules (both partially occluded and completely occluded tubules) by scanning electron microscope (SEM). Fifty human teeth were extracted, cervical cavities were prepared and etched with 17% ethylenediaminetetraacetic acid, and smear layer was removed to expose the tubules. The teeth were divided into five groups: Group I - Application of NovaMin-formulated toothpaste, Group II - Application of Pro-Argin ™ -formulated toothpaste, Group III - Application of diode laser in noncontact mode, Group IV - NovaMin-formulated toothpaste followed by laser irradiation, and Group V - Pro-Argin ™ -formulated toothpaste followed by laser irradiation. After treatment, quantitative analysis of occluded dentinal tubules was done by SEM analysis. The mean values of percentages of total occlusion of dentinal tubules in Groups I, II, III, IV, and V were 92.73% ± 1.38, 90.67% ± 1.86, 96.57% ± 0.64, 97.3% ± 0.68, and 96.9% ± 6.08, respectively. Addition of diode laser (Groups III, IV, and V) yielded a significant occlusion of the dentinal tubules when compared to desensitizing toothpastes alone (Groups I and II). Diode laser (Group III) has shown more efficacy in occluding dentinal tubules when compared with desensitizing toothpastes which was statistically significant ( P < 0.05). Among the five groups, NovaMin + diode laser (Group IV) showed the highest percentage of occluded dentinal tubules.

Efficient generation of 509 nm light by sum-frequency mixing between two tapered diode lasers

NASA Astrophysics Data System (ADS)

Tawfieq, Mahmoud; Jensen, Ole Bjarlin; Hansen, Anders Kragh; Sumpf, Bernd; Paschke, Katrin; Andersen, Peter E.

2015-03-01

We demonstrate a concept for visible laser sources based on sum-frequency generation of beam combined tapered diode lasers. In this specific case, a 1.7 W sum-frequency generated green laser at 509 nm is obtained, by frequency adding of 6.17 W from a 978 nm tapered diode laser with 8.06 W from a 1063 nm tapered diode laser, inside a periodically poled MgO doped lithium niobate crystal. This corresponds to an optical to optical conversion efficiency of 12.1%. As an example of potential applications, the generated nearly diffraction-limited green light is used for pumping a Ti:sapphire laser, thus demonstrating good beam quality and power stability. The maximum output powers achieved when pumping the Ti:sapphire laser are 226 mW (CW) and 185 mW (mode-locked) at 1.7 W green pump power. The optical spectrum emitted by the mode-locked Ti:sapphire laser shows a spectral width of about 54 nm (FWHM), indicating less than 20 fs pulse width.

Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

PubMed

Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

2014-04-01

The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser. © 2013 The Authors. Australian Endodontic Journal © 2013 Australian Society of Endodontology.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andrew James

2016-05-03

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Treatment of keloid scars with a 1210-nm diode laser in an animal model.

PubMed

Philandrianos, Cécile; Bertrand, Baptiste; Andrac-Meyer, Lucile; Magalon, Guy; Casanova, Dominique; Kerfant, Nathalie; Mordon, Serge

2015-12-01

A temperature increase can improve wound healing by activation of heat shock protein 70 and stimulation of fibroblasts. Since keloids are a dysfunction of collagen fiber synthesis and organization, this study aimed to evaluate if a 1,210 nm diode laser could have effects in a new animal model of keloid scars. A total of 39 nude mice were used for this study. Phototypes IV and V human keloids were grafted into their backs and after 1 month of healing, the mice were divided into four groups: Control, Laser, Resection, Resection/Laser. In the Laser group, the keloids were treated with a 1,210-nm diode-laser with the following parameters: 4 W; 10 seconds; fluence: 51 J/cm(2) ; spot: 18.9 × 3.7 mm(2) . In the Resection group, surgical intra-lesional excision was performed. In the Resection/Laser group, keloids were treated with the 1,210-nm laser-diode after surgical intra-lesional excision. Temperature measurements were made during the laser treatment. Clinical examination and histological study were performed on the day of treatment and 1 month, 2 months, and 3 months later. Mean temperature measurement was of 44.8°C (42-48°) in the Laser groups. No healing complications or keloid proliferation was observed in any group. Keloid histologic characters were confirmed in all grafts. No histologic particularity was observed in the laser groups in comparison with the Control and Resection groups. First, this keloid animal model appears to be adapted for laser study. Secondly, the 1,210-nm diode laser does not induce keloid thermal damage in vivo. Further studies with different 1,210-nm laser diode parameters should be performed in order to observe significant effects on keloids. © 2015 Wiley Periodicals, Inc.

Laser diode ignition characteristics of Zirconium Potassium Perchlorate (ZPP)

NASA Technical Reports Server (NTRS)

Callaghan, Jerry D.; Tindol, Scot

1993-01-01

Hi-Shear Technology, Corp., (HSTC) has designed and built a Laser equivalent NASA Standard Initiator (LNSI). Langlie tests with a laser diode output initiating ZPP were conducted as a part of this effort. The test parameters include time to first pressure, laser power density requirements, and ignition time. The data from these laser tests on ZPP are presented.

Evaluation of Temperature Elevation During Root Canal Treatment with Dual Wavelength Laser: 2780 nm Er,Cr:YSGG and 940 nm Diode.

PubMed

Al-Karadaghi, Tamara Sardar; Gutknecht, Norbert; Jawad, Hussein A; Vanweersch, Leon; Franzen, Rene

2015-09-01

The purpose of this study was to evaluate the effects of dual wavelength (2780 nm Er,Cr:YSGG and 940 nm diode) laser with radial firing tip (RFT) on the external root surface and sub-surfaces, in terms of temperature changes during laser-assisted root canal treatment. A significant factor that may limit the use of lasers in endodontics is the possible thermal injury to tooth supporting structures. A total of 50 sound single-rooted extracted teeth were divided randomly into two groups (n = 25). Group A, irradiated with Er,Cr:YSGG laser at 1.06 W, 50 Hz, and 50 μs was a control group, and group B was irradiated with dual wavelength of Er,Cr:YSGG laser with the same settings as group A and a diode laser of 0.51 W at 4 ms and 10 ms pulse duration. K-type thermocouples were used to record temperature changes at the cervical, middle, and apical root thirds, on root surfaces and sub-surfaces, arising from delivery of laser energy through RFT. Temperature elevation in group B was significantly higher in the middle and apical thirds of the prepared samples than in group A (p < 0.0001). Group B presented a mean temperature elevation of 5.07°C on the apical surface region corresponding to a 1.48 mm dentin thickness, whereas a mean temperature increase of 7.72°C was recorded corresponding to dentin thickness of 0.95 mm. Within the studied parameters, the dual wavelength laser did not result in adverse thermal changes on the external root surface in vitro.

Carrier envelope offset frequency detection and stabilization of a diode-pumped mode-locked Ti:sapphire laser.

PubMed

Gürel, Kutan; Wittwer, Valentin J; Hakobyan, Sargis; Schilt, Stéphane; Südmeyer, Thomas

2017-03-15

We demonstrate the first diode-pumped Ti:sapphire laser frequency comb. It is pumped by two green laser diodes with a total pump power of 3 W. The Ti:sapphire laser generates 250 mW of average output power in 61-fs pulses at a repetition rate of 216 MHz. We generated an octave-spanning supercontinuum spectrum in a photonic-crystal fiber and detected the carrier envelope offset (CEO) frequency in a standard f-to-2f interferometer setup. We stabilized the CEO-frequency through direct current modulation of one of the green pump diodes with a feedback bandwidth of 55 kHz limited by the pump diode driver used in this experiment. We achieved a reduction of the CEO phase noise power spectral density by 140 dB at 1 Hz offset frequency. An advantage of diode pumping is the ability for high-bandwidth modulation of the pump power via direct current modulation. After this experiment, we studied the modulation capabilities and noise properties of green pump laser diodes with improved driver electronics. The current-to-output-power modulation transfer function shows a bandwidth larger than 1 MHz, which should be sufficient to fully exploit the modulation bandwidth of the Ti:sapphire gain for CEO stabilization in future experiments.

Coherent and noncoherent low-power diodes in clinical practice

NASA Astrophysics Data System (ADS)

Antipa, Ciprian; Pascu, Mihail-Lucian; Stanciulescu, Viorica; Vlaiculescu, Mihaela; Ionescu, Elena; Bordea, Daniel

1997-05-01

Clinical efficacy of the low power laser (LPL) in medical treatments is still not well established. In a double blind, placebo controlled study, we tried to find out first which type of LPL is more efficient, and second if coherence is an important character for clinical efficacy. We treated 1228 patients having different rheumatic diseases, with low power diode, used as follows: A group: IR coherent diode, continuous emission, 3 mW power; B group: IR coherent diode, pulsed emission, output power about 3 mW; C group: IR noncoherent diode continuous emission 9 mW power; D group: both IR diode lasers (continuous or pulsed) and HeNe laser, continuous emission, 2 mW power; E group: placebo laser as control group. The energy dose used for every group was the same, as well as the clinical protocols. The positive results were: 66.16% for A group; 64.06% for B group; 48.87% for C group; 76.66% for D group, and 39.07% for E group. Finally, we showed that LPL is really efficient in the treatment of some rheumatic diseases, especially when red and IR diode laser were used in combination. The type of emission (continuous or pulsed) is not important, but coherence is obviously necessary for clinical efficacy.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J

2011-01-03

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and productionmore » capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and increased reliability. The high-level requirements on the semiconductor lasers involve reliability, price points on a price-per-Watt basis, and a set of technical requirements. The technical requirements for the amplifier design in reference 1 are discussed in detail and are summarized in Table 1. These values are still subject to changes as the overall laser system continues to be optimized. Since pump costs can be a significant fraction of the overall laser system cost, it is important to achieve sufficiently low price points for these components. At this time, the price target for tenth-of-akind IFE plant is $0.007/Watt for packaged devices. At this target level, the pumps account for approximately one third of the laser cost. The pump lasers should last for the life of the power plant, leading to a target component lifetime requirement of roughly 14 Ghosts, corresponding to a 30 year plant life and 15 Hz repetition rate. An attractive path forward involes pump operation at high output power levels, on a Watts-per-bar (Watts/chip) basis. This reduces the cost of pump power (price-per-Watt), since to first order the unit price does not increase with power/bar. The industry has seen a continual improvement in power output, with current 1 cm-wide bars emitting up to 500 W QCW (quasi-continuous wave). Increased power/bar also facilitates achieving high irradiance in the array plane. On the other hand, increased power implies greater heat loads and (possibly) higher current drive, which will require increased attention to thermal management and parasitic series resistance. Diode chips containing multiple p-n junctions and quantum wells (also called nanostack structures) may provide an additional approach to reduce the peak current.« less

Equipment for an Inexpensive Introductory Optics Lab.

ERIC Educational Resources Information Center

Siefken, H. E.; Tomaschke, H. E.

1994-01-01

Provides an inexpensive method (less than $125) for performing experiments usually requiring a laser. Suggests building a laser diode light source, a device for producing multiple parallel beams, a light meter, a polar/analyzer, a laser light show apparatus, and a circuit to modulate the laser diode intensity. (MVL)

Improvement in reduced-mode (REM) diodes enable 315 W from 105-μm 0.15-NA fiber-coupled modules

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2018-02-01

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - and 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

United States Air Force Summer Faculty Research Program: Program Management Report

DTIC Science & Technology

1988-12-01

Laboratory 64 Realization of Sublayer Relative Dr. Lane Clark Shielding Order in Electromagnetic Topology 65 Diode Laser Probe of Vibrational Dr. David...given. In addition, all possible sublayer topologies with relative shielding order at most 5 are explicitly given. S863 Diode Laser Probe of...dioxide at 193 nm to prepare the SO radicals. High resolution diode laser absorption spectrometry will be used to obtain time-dependent concentrations

Diode Laser Sensor for Scramjet Inlet

DTIC Science & Technology

2010-05-11

This work presents the development of an oxygen -based diode laser absorption sensor designed to be used in a supersonic combustion ramjet engine inlet...ADFA Abstract This work presents development of an oxygen -based diode laser absorption sensor designed to be used in a supersonic combustion ramjet... sensor needs to use oxygen as the absorbing species, as this is the only option for absorption measurements in inlet air. Oxygen absorption lines

Novel High Power Type-I Quantum Well Cascade Diode Lasers

DTIC Science & Technology

2017-08-30

Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

Optimizing UV laser focus profiles for improved MALDI performance.

PubMed

Holle, Armin; Haase, Andreas; Kayser, Markus; Höhndorf, Jens

2006-06-01

Matrix assisted laser desorption/ionization (MALDI) applications, such as proteomics, genomics, clinical profiling and MALDI imaging, have created a growing demand for faster instrumentation. Since the commonly used nitrogen lasers have throughput and life span limitations, diode-pumped solid-state lasers are an alternative. Unfortunately this type of laser shows clear performance limitations in MALDI in terms of sensitivity, resolution and ease of use, for applications such as thin-layer sample preparations, acceptance of various matrices (e.g. DHB for glycopeptides) and MALDI imaging. While it is obvious that the MALDI process has some dependence on the characteristics of the laser used, it is unclear which features are the most critical in determining laser performance for MALDI. In this paper we show, for the first time, that a spatially structured laser beam profile in lieu of a Gaussian profile is of striking importance. This result enabled us to design diode-pumped Nd : YAG lasers that on various critical applications perform as well for MALDI as the nitrogen lasers and in some respects even better. The modulation of the beam profile appears to be a new parameter for optimizing the MALDI process. In addition, the results trigger new questions directing us to a better understanding of the MALDI process. Copyright (c) 2006 John Wiley & Sons, Ltd.

Comparison of the Antibacterial Effect of 810 nm Diode Laser and Photodynamic Therapy in Reducing the Microbial Flora of Root Canal in Endodontic Retreatment in Patients With Periradicular Lesions

PubMed Central

Asnaashari, Mohammad; Godiny, Mostafa; Azari-Marhabi, Saranaz; Tabatabaei, Fahimeh Sadat; Barati, Maryam

2016-01-01

Introduction: The aim of this study was to compare the antibacterial efficacy of diode laser 810nm and photodynamic therapy (PDT) in reducing bacterial microflora in endodontic retreatment of teeth with periradicular lesion. Methods: In this in vivo clinical trial, 20 patients who needed endodontic retreatment were selected. After conventional chemo mechanical preparation of root canals, microbiological samples were taken with sterile paper point (PP), held in thioglycollate broth, and then were transferred to the microbiological lab. In the first group, PDT with methylene blue (MB) and diode laser (810 nm, 0.2 W, 40 seconds) was performed and in the second group diode laser (810 nm, 1.2 W, 30 seconds) was irradiated. Then second samples were taken from all canals. Results: CFU/ml amounts showed statistically significant reduction in both groups (P < 0.001). CFU/ml amounts were compared between the two groups and there was no statistical difference. Conclusion: PDT and diode laser 810 nm irradiation are effective methods for root canal disinfection. PDT is a suitable alternative for diode laser 810 nm irradiation, because of lower thermal risk on root dentin. PMID:27330705

Prospective study of the 532 nm laser (KTP) versus diode laser 980 nm in the resection of hyperplastic lesions of the oral cavity

PubMed Central

Bargiela-Pérez, Patricia; González-Merchán, Jorge; Díaz-Sánchez, Rosa; Serrera-Figallo, Maria-Angeles; Volland, Gerd; Joergens, Martin; Gutiérrez-Pérez, Jose-Luis

2018-01-01

Background The aim of this study is to evaluate the resection of hyperplastic lesions on the buccal mucosa comparing the 532nm laser (KTP), versus diode 980nm laser, considering pain, scarring, inflammation and drug consumption that occurred postoperatively with each lasers. Material and Methods A prospective study of consecutive series of 20 patients in two groups that presents hyperplastic lesions on the buccal mucosa. The choice of the KTP laser or diode 980nm laser for the surgery was made randomly. The power used was 1.5W in both groups in a continuous wave mode with a 320 μm optical fiber. Parameters of pain, scarring, inflammation and consumption of drugs were recorded by a Numerical Rating Scale and evaluated postoperatively. These recordings were made the day of the surgery, 24 hours after, 14 and 28 days after. Results Pain and inflammation was light - moderate. The consumption of paracetamol was somewhat higher in the diode 980nm laser versus the KTP laser after 24 hours, although data was not statistically significant; significant differences were found after 28 days in regards to pain (p = 0.023) and inflammation (p = 0.023), but always in the absence parameter so we find no pain in both lasers. Scarring in the two types of laser showed no differences along the visits, with not detected scar retractable. Conclusions Although there is a slight histological difference regarding the KTP laser in the oral soft tissues for clinical use, both wavelengths are very suitable for excision of oral fibroma. Key words:Laser surgery, Laser therapy, oral surgery, soft tissue, 980 nm diode laser, 532 nm KTP laser. PMID:29274158

Little evidence for the use of diode lasers as an adjunct to non-surgical periodontal therapy.

PubMed

Dederich, Douglas N

2015-03-01

Medline, PubMed, the Cochrane Central Register of Controlled Trials (CENTRAL) and Embase databases. Randomised controlled trials (RCTs) using thermal diode lasers as an adjunct to non-surgical conventional periodontal initial therapy conducted in patients ≥18 years old written in English or Dutch were considered. Study assessment data extraction and quality assessment was carried out independently by two reviewers. The main outcome variables were probing pocket depth (PPD) and clinical attachment loss (CAL), but plaque scores (PS), bleeding scores (BS) and the Gingival Index (GI) were also considered. Meta-analysis was carried out using a random effects model. Nine studies involving 247 patients were included. Seven studies were of split mouth design and two were parallel group studies. The study designs showed considerable heterogeneity and follow up ranged from six weeks to six months. Meta-analysis found no significant effect on PPD, CAL and PS. There was however a significant effect for GI and BS favouring adjunctive use of the diode laser. The collective evidence regarding adjunctive use of the diode laser with SRP indicates that the combined treatment provides an effect comparable to that of SRP alone. With respect to BS the results showed a small but significant effect favouring the diode laser, however, the clinical relevance of this difference remains uncertainStandard . This systematic review questions the adjunctive use of diode laser with traditional mechanical modalities of periodontal therapy in patients with periodontitis. The strength of the recommendation for the adjunctive use of the diode laser is considered to be 'moderate' for changes in PPD and CAL.

A novel high-resolution chaotic lidar with optical injection to chaotic laser diode

NASA Astrophysics Data System (ADS)

Wang, Yun-cai; Wang, An-bang

2008-03-01

A novel chaotic lidar with high resolution is proposed and studied theoretically. In chaotic lidar system, the chaotic laser emitted from chaotic laser diode is split into two beams: the probe and the reference light. The ranging is achieved by correlating the reference waveform with the delayed probe waveform backscattered from the target. In chaotic lidar systems presented previously, the chaotic signal source is laser diode with optical feedback or with optical injection by another one. The ranging resolution is limited by the bandwidth of chaotic laser which determined by the configuration of chaotic signal source. We proposed a novel chaotic lidar which ranging resolution is enhanced significantly by external optical injected chaotic laser diode. With the bandwidth-enhanced chaotic laser, the range resolution of the chaotic lidar system with optical injection is roughly two times compared with that of without optical injection. The resolution increases with injection strength increasing in a certain frequency detuning range.

Laser diode and pumped Cr:Yag passively Q-switched yellow-green laser at 543 nm

NASA Astrophysics Data System (ADS)

Yao, Y.; Ling, Zhao; Li, B.; Qu, D. P.; Zhou, K.; Zhang, Y. B.; Zhao, Y.; Zheng, Q.

2013-03-01

Efficient and compact yellow green pulsed laser output at 543 nm is generated by frequency doubling of a passively Q-switched end diode-pumped Nd:YVO4 laser at 1086 nm under the condition of sup-pressing the higher gain transition near 1064 nm. With 15 W of diode pump power and the frequency doubling crystal LBO, as high as 1.58 W output power at 543 nm is achieved. The optical to optical conversion efficiency from the corresponding Q-switched fundamental output to the yellow green output is 49%. The peak power of the Q-switched yellow green pulse laser is up to 30 kW with 5 ns pulse duration. The output power stability over 8 hours is better than 2.56% at the maximum output power. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by frequency doubling of a passively Q-switched end diode pumped Nd:YVO4 laser at 1086 nm.

Capturing thermal, mechanical, and acoustic effects of the diode (980 nm) laser in stapedotomy.

PubMed

Kamalski, Digna M A; de Boorder, Tjeerd; Bittermann, Arnold J N; Wegner, Inge; Vincent, Robert; Grolman, Wilko

2014-07-01

The diode laser, with a wavelength of 980 nm, has promising characteristics for being used for the fenestration during stapedotomy. It is known that at this wavelength absorption in pigmented tissues is high, and absorption in water is relatively low compared with medical lasers in the infrared, making it theoretically an applicable laser for stapes surgery in patients with otosclerosis. Another important advantage is that, with respect to other lasers, this device is relatively inexpensive. Despite the potential advantages, the available literature only shows limited reports of this laser being used in stapes surgery. The present article evaluates the thermal, mechanical, and acoustic properties of the diode laser during stapes surgery. For the mechanical effects, high-speed imaging with a frame rate up to 4000 f/s (=250 μs resolution) was performed in an inner ear model. For thermal effects, the high-speed Schlieren technique was used. Acoustics were recorded by a hydrophone, incorporated in the model. Pulse settings were 100 ms, 3 W, which are the same settings used during stapes surgery. The application of the diode laser resulted in limited mechanical and thermal effects. Impulse noise was low with an average of 52 (SD, 7.8) dB (A). Before carbonization of the tip of the delivery laser, fiber enhances ablation of the footplate. The 980-nm diode laser is a useful tool for laser-assisted stapedotomy in patients with otosclerosis. Mechanical, thermal, and acoustic effects are limited and well within the safety limits.

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2016-03-15

In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of amore » LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.« less

INITIAL EXPERIENCE WITH TRANSPUPILLARY DIODE LASER PHOTOCOAGULATION FOR RETINAL DISEASES.

PubMed

Uhumwangho, O M; Iyiriaro, Iao

2014-01-01

Lasers are an invaluable treatment modality for the management of some retinovascular diseases. One of these lasers is the diode laser which is easy to procure and maintain. To review the outcomes of diode laser photocoagulation in patients with a variety of retinal conditions. A retrospective case series of all patients who had retinal laser photocoagulation between July 2012 and June 2014 with the semiconductor infrared diode laser was performed. Demographic and clinical data collected included age, sex, eye involved, visual acuity, diagnosis, associated systemic and ocular diseases, intra and post treatment findings, laser treatment parameters and follow up. A total of 22 eyes of 15 patients had diode laser treatment during the period under review comprising 8(53.3%) males and 7(46.7%) females with a mean age at presentation of 53.4±8.9 years. The indications for treatment were proliferative diabetic retinopathy in 18(81.8%) eyes of 11 patients, retinal vein occlusion in 2(9.1%) eyes of 2 patients and retinal breaks with lattice in 2(9.1%) eyes of 2 patients with fellow eye retinal detachment. Visual acuity in eyes with diabetic retinopathy improved in 9(50%) eyes, worsened in 3(16.7%) eyes and was unchanged/ stable in 6(33.3%) eyes. Regression of neovascularization was achieved in 2(100%) eyes with retinal vein occlusion. The retina of the 2(100%) eyes with breaks following retinopexy remained attached during the follow up period. The follow up period ranged from 2 days to 2 years with a mean duration of 13.5±15.8 months. The diode laser is an effective and beneficial treatment modality in the management of proliferative retinopathies and some retinal diseases.

A comparison of diode laser and Er:YAG lasers in the treatment of gingival melanin pigmentation.

PubMed

Simşek Kaya, Göksel; Yapici Yavuz, Günay; Sümbüllü, Muhammed A; Dayi, Ertunç

2012-03-01

This study compared the use of diode and Er:YAG lasers in treating gingival melanin pigmentation (GMP) in terms of gingival depigmentation, local anesthesia requirements, postoperative pain/discomfort, depigmentation effectiveness, and total treatment duration. Twenty patients (13 female, 7 male) referred with GMP were enrolled in the study. Patients were randomly divided into 2 groups. Group 1 was treated with a gallium aluminum arsenide diode laser with a continuous wavelength of 808 nm, and group 2 was treated with an Er:YAG laser with a continuous wavelength of 2,940 nm. Gingival depigmentation was performed by applying the laser at 1 W. Treatment was administered on a weekly basis until a normal pink gingival color was observable in clinical examination and photographs. In addition, patients were asked to evaluate the procedure by using a self-administered questionnaire. Procedures were carried out without the need for any topical or local anesthetic, and no unpleasant events occurred during the actual procedure or the healing period. The total length of treatment was significantly shorter with the diode laser (group 1) than with the Er:YAG laser (group 2; P < .05). No melanin recurrence was detected during any follow-up session. Diode and Er:YAG lasers administered at 1 W both result in satisfactory depigmentation of GMP. Copyright © 2012 Elsevier Inc. All rights reserved.

Prevention of pharyngocutaneous fistulas by means of laser-weld techniques.

PubMed

Shohet, J A; Reinisch, L; Ossoff, R H

1995-07-01

Although much has been written on methods of dealing with pharyngocutaneous fistulas once they have formed, there are few reports of methods of preventing fistula formation from occurring. We examined the use of laser-weld techniques with the neodymium:yttrium aluminum garnet (Nd:YAG) and diode lasers to seal pharyngotomy closures. Laser-weld techniques have been used successfully in many other tissues, but reports documenting use in the upper aerodigestive tract are minimal. Indocyanine-green dye-enhanced collagen and fibrinogen were studied as laser solder materials for the diode laser. Twenty-nine experimental animals were studied. Neither the Nd:YAG nor the diode laser was successful in preventing fistula formation. Tensiometric studies documented significant strength of the laser welds ex vivo, but this finding was not clinically significant.

Injection locking of a low cost high power laser diode at 461 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pagett, C. J. H.; Moriya, P. H., E-mail: paulohisao@ifsc.usp.br; Celistrino Teixeira, R.

2016-05-15

Stable laser sources at 461 nm are important for optical cooling of strontium atoms. In most existing experiments, this wavelength is obtained by frequency doubling infrared lasers, since blue laser diodes either have low power or large emission bandwidths. Here, we show that injecting less than 10 mW of monomode laser radiation into a blue multimode 500 mW high power laser diode is capable of slaving at least 50% of the power to the desired frequency. We verify the emission bandwidth reduction by saturation spectroscopy on a strontium gas cell and by direct beating of the slave with the mastermore » laser. We also demonstrate that the laser can efficiently be used within the Zeeman slower for optical cooling of a strontium atomic beam.« less

Narrow linewidth operation of a spectral beam combined diode laser bar.

PubMed

Zhu, Zhanda; Jiang, Menghua; Cheng, Siqi; Hui, Yongling; Lei, Hong; Li, Qiang

2016-04-20

Our experiment is expected to provide an approach for realizing ultranarrow linewidth for a spectral beam combined diode laser bar. The beams of a diode laser bar are combined in a fast axis after a beam transformation system. With the help of relay optics and a transform lens with a long focal length of 1.5 m, the whole wavelength of a spectral combined laser bar can be narrowed down to 0.48 nm from more than 10 nm. We have achieved 56.7 W cw from a 19-element single bar with an M² of 1.4  (in horizontal direction)×11.6  (in vertical direction). These parameters are good evidence that all the beams from the diode laser bar are combined together to increase the brightness.

Probing longitudinal modes evolution of a InGaN green laser diode

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsi; Lin, Wei-Chen; Chen, Hong-Zui; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-06-01

This study aims to investigate the longitudinal mode evolution of a InGaN green laser diode. A spectrometer with a 3-pm resolution was employed to obtain the emission spectra of a green laser diode, at a wavelength of around 520 nm, as a function of applied current and temperature. The spectral behavior of the laser modes with applied current was investigated. Right above the lasing threshold, the green diode laser emitted single longitudinal mode output. With increasing applied current, the number of the longitudinal modes increased. Up to ten lasing modes oscillated within the entire gain profile when the applied currents were tuned to 2.2Ith. Subsequently, a multi-Lorentzian profile model was adopted to analyze the spectra and observe how the modes evolved with temperature and applied current.

885-nm laser diode array pumped ceramic Nd:YAG master oscillator power amplifier system

NASA Astrophysics Data System (ADS)

Yu, Anthony W.; Li, Steven X.; Stephen, Mark A.; Seas, Antonios; Troupaki, Elisavet; Vasilyev, Aleksey; Conley, Heather; Filemyr, Tim; Kirchner, Cynthia; Rosanova, Alberto

2010-04-01

The objective of this effort is to develop more reliable, higher efficiency diode pumped Nd:YAG laser systems for space applications by leveraging technology investments from the DoD and other commercial industries. Our goal is to design, build, test and demonstrate the effectiveness of combining 885 nm laser pump diodes and the use of ceramic Nd:YAG for future flight missions. The significant reduction in thermal loading on the gain medium by the use of 885 nm pump lasers will improve system efficiency.

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

PubMed

Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

2012-04-15

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

NASA direct detection laser diode driver

NASA Technical Reports Server (NTRS)

Seery, B. D.; Hornbuckle, C. A.

1989-01-01

TRW has developed a prototype driver circuit for GaAs laser diodes as part of the NASA/Goddard Space Flight Center's Direct Detection Laser Transceiver (DDLT) program. The circuit is designed to drive the laser diode over a range of user-selectable data rates from 1.7 to 220 Mbps, Manchester-encoded, while ensuring compatibility with 8-bit and quaternary pulse position modulation (QPPM) formats for simulating deep space communications. The resulting hybrid circuit has demonstrated 10 to 90 percent rise and fall times of less than 300 ps at peak currents exceeding 100 mA.

Programmable, secondary frequency standard based infrared synthesizer using tunable lead-salt diode lasers

NASA Technical Reports Server (NTRS)

Freed, C.; Bielinski, J. W.; Lo, W.

1983-01-01

Quantum phase noise limited Lorentzian power spectral densities were achieved with tunable lead-salt diode lasers. Linewidths as narrow as 22 kHz were observed. A truly programmable infrared synthesizer was produced by frequency-offset-locking the tunable diode lasers to the combination of a stable CO2 (or CO) reference laser and a programmable microwave frequency synthesizer. Absolute frequency accuracy and reproducibility of about + or - 30 kHz (0.000001 kaysers) relative to the primary Cs frequency standard may now be obtained with this technique.

Bistable optical devices with laser diodes coupled to absorbers of narrow spectral bandwidth.

PubMed

Maeda, Y

1994-06-20

An optical signal inverter was demonstrated with a combination of the following two effects: One is the decrease of the transmission of an Er-doped YAG crystal with increasing red shift of a laser diode resulting from an increase in the injection current, and the other is a negative nonlinear absorption in which the transmission decreases inversely with increasing laser intensity. Because a hysteresis characteristic exists in the relationship between the wavelength and the injection current of the laser diode, an optical bistability was observed in this system.

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bóckowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.; Watson, M. A.; Blanchard, P.; White, H.

2016-03-01

Gallium Nitride laser diodes fabricated from the AlGaInN material system is an emerging technology for laser sources from the UV to visible and is a potential key enabler for new system applications such as free-space (underwater & air bourne links) and plastic optical fibre telecommunications. We measure visible light (free-space and underwater) communications at high frequency (up to 2.5 Gbit/s) and in plastic optical fibre (POF) using a directly modulated GaN laser diode.

Open-path atmospheric transmission for a diode-pumped cesium laser.

PubMed

Rice, Christopher A; Lott, Gordon E; Perram, Glen P

2012-12-01

A tunable diode laser absorption spectroscopy device was developed to study atmospheric propagation for emerging high-energy laser weapons. The cesium diode-pumped alkali laser operates near 895 nm in the vicinity of several water-vapor absorption lines. Temperature, pressure, and water vapor concentration were determined for 150 m and 1 km open paths with statistical errors of ∼0.2%. Comparison with meteorological instruments yields agreement for the 1 km path to within 0.6% for temperature, 3.7% for pressure, and 2.4% for concentration.

The HALNA project: Diode-pumped solid-state laser for inertial fusion energy

NASA Astrophysics Data System (ADS)

Kawashima, T.; Ikegawa, T.; Kawanaka, J.; Miyanaga, N.; Nakatsuka, M.; Izawa, Y.; Matsumoto, O.; Yasuhara, R.; Kurita, T.; Sekine, T.; Miyamoto, M.; Kan, H.; Furukawa, H.; Motokoshi, S.; Kanabe, T.

2006-06-01

High-enery, rep.-rated, diode-pumped solid-state laser (DPSSL) is one of leading candidates for inertial fusion energy driver (IFE) and related laser-driven high-field applications. The project for the development of IFE laser driver in Japan, HALNA (High Average-power Laser for Nuclear Fusion Application) at ILE, Osaka University, aims to demonstrate 100-J pulse energy at 10 Hz rep. rate with 5 times diffraction limited beam quality. In this article, the advanced solid-state laser technologies for one half scale of HALNA (50 J, 10 Hz) are presented including thermally managed slab amplifier of Nd:phosphate glass and zig-zag optical geometry, and uniform, large-area diode-pumping.

Space Operation of the MOLA Laser

NASA Technical Reports Server (NTRS)

Afzal, Robert S.

2000-01-01

Interest in lasers for space applications such as active remote sensing in Earth orbit, planetary science, and inter-satellite laser communications is growing. These instruments typically use diode-pumped solid state lasers for the laser transmitter. The mission specifications and constraints of space qualification, place strict requirements on the design and operation of the laser. Although a laser can be built in the laboratory to meet performance specifications relatively routinely, tile mission constraints demand unique options and compromises in the materials used, and design to ensure the success of the mission. Presently, the best laser architecture for a light weight, rugged, high peak power and efficient transmitter is a diode laser pumped ND:YAG laser. Diode lasers can often obviate the need for water cooling, reduce the size and weight of the laser, increase the electrical to optical efficiency, system reliability, and lifetime. This paper describes the in-space operation and performance of the Mars Orbiter Laser Altimeter (MOLA) laser transmitter, representing the current state-of-the-art in space-based solid- state lasers.

Single-frequency Ince-Gaussian mode operations of laser-diode-pumped microchip solid-state lasers.

PubMed

Ohtomo, Takayuki; Kamikariya, Koji; Otsuka, Kenju; Chu, Shu-Chun

2007-08-20

Various single-frequency Ince-Gaussian mode oscillations have been achieved in laser-diode-pumped microchip solid-state lasers, including LiNdP(4)O(12) (LNP) and Nd:GdVO(4), by adjusting the azimuthal symmetry of the short laser resonator. Ince-Gaussian modes formed by astigmatic pumping have been reproduced by numerical simulation.

Low-Loss Coupler For Microwave Laser-Diode Modulation

NASA Technical Reports Server (NTRS)

Toda, Minoru

1991-01-01

Elimination of series resistor reduces loss of radio-frequency power. Quarter-wavelength matching section connected to transmission line eliminates need for resistor near laser diode and extends frequency response of system. Concept significantly extends relatively flat frequency response of laser diode or similar component, while simplifying design of its package, increasing amplitude of output signal, and reducing dissipation of heat by eliminating resistance. Phase characteristics approximately linear and any digital information transmitted not significantly altered.

Laser Space Propulsion Overview (Preprint)

DTIC Science & Technology

2006-08-22

thruster technology. However, a laser-ablation propulsion engine using a set of diode-pumped glass fiber amplifiers with a total of 350-W optical power...achieved Isp = 3660s with Cm = 56µN/W and ηAB = 100%. These two units will be combined in a single device using low-mass diode-pumped glass fiber...diode-pumped glass fiber lasers onboard the spacecraft to provide thrust with variable Isp and unmatched thrust efficiency deriving from exothermic

Development and Application of Novel Diagnostics for Arc-Jet Characterization

NASA Technical Reports Server (NTRS)

Hanson, R. K.

2002-01-01

This NASA-Ames University Consortium Project has focused on the design and demonstration of optical absorption sensors using tunable diode laser to target atomic copper impurities from electrode erosion in thc arc-heater metastable electronic excited states of molecular nitrogen, atomic argon, aid atomic oxygen in the arcjet plume. Accomplishments during this project include: 1. Design, construction, and assembly of optical access to the arc-heater gas flow. 2. Design of diode laser sensor for copper impurities in the arc-heater flow. 3 . Diode laser sensor design and test in laboratory plasmas for metastable Ar(3P), O(5S), N(4P), and N2(A). 4. Diode laser sensor demonstration measurements in the test cell to monitor species in the arc-jet plume.

High-power fiber-coupled 100W visible spectrum diode lasers for display applications

NASA Astrophysics Data System (ADS)

Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

2013-02-01

Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

Structural and optical characterization of ZnO/Mg(x)Zn(1-x)O multiple quantum wells based random laser diodes.

PubMed

Jiang, Qike; Zheng, He; Wang, Jianbo; Long, Hao; Fang, Guojia

2012-12-01

Two kinds of laser diodes (LDs) comprised of ZnO/Mg(x)Zn(1-x)O (ZnO/MZO) multiple quantum wells (MQWs) grown on GaN (MQWs/GaN) and Si (MQWs/Si) substrates, respectively, have been constructed. The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that with MQWs/Si does not. In the MQWs/Si, ZnO/MZO MQWs consist of nanoscaled crystallites, and the MZO layers undergo a phase separation of cubic MgO and hexagonal ZnO. Moreover, the Mg atom predominantly locates in the MZO layers along with a significant aggregation at the ZnO/MZO interfaces; in sharp contrast, the ZnO/MZO MQWs in the MQWs/GaN show a well-crystallized structure with epitaxial relationships among GaN, MZO, and ZnO. Notably, Mg is observed to diffuse into the ZnO well layers. The structure-optical property relationship of these two LDs is further discussed.

High-power pulsed and CW diode-pumped mode-locked Nd:YAG lasers

NASA Technical Reports Server (NTRS)

Marshall, Larry R.; Hays, A. D.; Kaz, Alex; Kasinski, Jeff; Burnham, R. L.

1991-01-01

The operation of both pulsed and CW diode-pumped mode-locked Nd:YAG lasers are presented. The pulsed laser produced 1.0 mJ with pulsewidths of 90 psec at 20 Hz. The CW pumped laser produced 6 W output at 1.064 microns and 3 W output at 532 nm.

Multiple-Diode-Laser Gas-Detection Spectrometer

NASA Technical Reports Server (NTRS)

Webster, Christopher R.; Beer, Reinhard; Sander, Stanley P.

1988-01-01

Small concentrations of selected gases measured automatically. Proposed multiple-laser-diode spectrometer part of system for measuring automatically concentrations of selected gases at part-per-billion level. Array of laser/photodetector pairs measure infrared absorption spectrum of atmosphere along probing laser beams. Adaptable to terrestrial uses as monitoring pollution or control of industrial processes.

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

NASA Astrophysics Data System (ADS)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

Changes in type I collagen following laser welding.

PubMed

Bass, L S; Moazami, N; Pocsidio, J; Oz, M C; LoGerfo, P; Treat, M R

1992-01-01

Selection of ideal laser parameters for tissue welding is inhibited by poor understanding of the mechanism. We investigated structural changes in collagen molecules extracted from rat tail tendon (> 90% type I collagen) after tissue welding using an 808 nm diode laser and indocyanine green dye applied to the weld site. Mobility patterns on SDS-PAGE were identical in the lasered and untreated tendon extracts with urea or acetic acid. Pepsin incubation after acetic acid extraction revealed a reduction of collagen alpha and beta bands in lasered compared with untreated specimens. Circular dichroism studies of rat tail tendon showed absence of helical structure in collagen from lasered tendon. No evidence for covalent bonding was present in laser-treated tissues. Collagen molecules are denatured by the laser wavelength and parameters used in this study. No significant amount of helical structure is regenerated on cooling. We conclude that non-covalent interactions between denatured collagen molecules may be responsible for the creation of tissue welding.

Optical coherence tomography-guided laser microsurgery for blood coagulation with continuous-wave laser diode.

PubMed

Chang, Feng-Yu; Tsai, Meng-Tsan; Wang, Zu-Yi; Chi, Chun-Kai; Lee, Cheng-Kuang; Yang, Chih-Hsun; Chan, Ming-Che; Lee, Ya-Ju

2015-11-16

Blood coagulation is the clotting and subsequent dissolution of the clot following repair to the damaged tissue. However, inducing blood coagulation is difficult for some patients with homeostasis dysfunction or during surgery. In this study, we proposed a method to develop an integrated system that combines optical coherence tomography (OCT) and laser microsurgery for blood coagulation. Also, an algorithm for positioning of the treatment location from OCT images was developed. With OCT scanning, 2D/3D OCT images and angiography of tissue can be obtained simultaneously, enabling to noninvasively reconstruct the morphological and microvascular structures for real-time monitoring of changes in biological tissues during laser microsurgery. Instead of high-cost pulsed lasers, continuous-wave laser diodes (CW-LDs) with the central wavelengths of 450 nm and 532 nm are used for blood coagulation, corresponding to higher absorption coefficients of oxyhemoglobin and deoxyhemoglobin. Experimental results showed that the location of laser exposure can be accurately controlled with the proposed approach of imaging-based feedback positioning. Moreover, blood coagulation can be efficiently induced by CW-LDs and the coagulation process can be monitored in real-time with OCT. This technology enables to potentially provide accurate positioning for laser microsurgery and control the laser exposure to avoid extra damage by real-time OCT imaging.

Optical coherence tomography-guided laser microsurgery for blood coagulation with continuous-wave laser diode

NASA Astrophysics Data System (ADS)

Chang, Feng-Yu; Tsai, Meng-Tsan; Wang, Zu-Yi; Chi, Chun-Kai; Lee, Cheng-Kuang; Yang, Chih-Hsun; Chan, Ming-Che; Lee, Ya-Ju

2015-11-01

Blood coagulation is the clotting and subsequent dissolution of the clot following repair to the damaged tissue. However, inducing blood coagulation is difficult for some patients with homeostasis dysfunction or during surgery. In this study, we proposed a method to develop an integrated system that combines optical coherence tomography (OCT) and laser microsurgery for blood coagulation. Also, an algorithm for positioning of the treatment location from OCT images was developed. With OCT scanning, 2D/3D OCT images and angiography of tissue can be obtained simultaneously, enabling to noninvasively reconstruct the morphological and microvascular structures for real-time monitoring of changes in biological tissues during laser microsurgery. Instead of high-cost pulsed lasers, continuous-wave laser diodes (CW-LDs) with the central wavelengths of 450 nm and 532 nm are used for blood coagulation, corresponding to higher absorption coefficients of oxyhemoglobin and deoxyhemoglobin. Experimental results showed that the location of laser exposure can be accurately controlled with the proposed approach of imaging-based feedback positioning. Moreover, blood coagulation can be efficiently induced by CW-LDs and the coagulation process can be monitored in real-time with OCT. This technology enables to potentially provide accurate positioning for laser microsurgery and control the laser exposure to avoid extra damage by real-time OCT imaging.

Wurtzite Spin-Lasers

NASA Astrophysics Data System (ADS)

Xu, Gaofeng; Faria Junior, Paulo E.; Sipahi, Guilherme M.; Zutic, Igor

Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. While theoretical studies of such spin-lasers have focused on zinc-blende semiconductors as their active regions, the first electrically injected carriers at room temperature were recently demonstrated in GaN-based wurtzite semiconductors, recognized also for the key role as highly-efficient light emitting diodes. By focusing on a wurtzite quantum well-based spin-laser, we use accurate electronic structure calculations to develop a microscopic description for its lasing properties. We discuss important differences between wurtzite and zinc-blende spin-lasers.

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliseev, P G

2012-12-31

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

Route to broadband chaos in a chaotic laser diode subject to optical injection.

PubMed

Wang, An-Bang; Wang, Yun-Cai; Wang, Juan-Fen

2009-04-15

We experimentally and numerically demonstrate a route to bandwidth-enhanced chaos that is induced by an additional optical injection for a chaotic laser diode with optical feedback. The measured and calculated optical spectra consistently reveal that the mechanism of bandwidth enhancement is the interaction between the injection and chaotic laser field via beating. The bandwidth can be maximized only when the injected light is detuned into the edge of the optical spectrum of the chaotic laser field and the beating frequency exceeds the original bandwidth. The simulated dynamics maps indicate that 20 GHz broadband chaos can be obtained by commonly used laser diodes.

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

1988-01-01

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Frequency locking of compact laser-diode modules at 633 nm

NASA Astrophysics Data System (ADS)

Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

2018-02-01

This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

GaAs laser diode pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Conant, L. C.; Reno, C. W.

1974-01-01

A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.

Analysis of shade, temperature and hydrogen peroxide concentration during dental bleaching: in vitro study with the KTP and diode lasers.

PubMed

Fornaini, C; Lagori, G; Merigo, E; Meleti, M; Manfredi, M; Guidotti, R; Serraj, A; Vescovi, P

2013-01-01

Many dental bleaching techniques are now available, several of them using a laser source. However, the literature on the exact role of coherent light in the biochemical reaction of the whitening process is very discordant. The aims of this in vitro study were: (1) to compare two different laser sources, a KTP laser with a wavelength of 532 nm and a diode laser with a wavelength of 808 nm, during dental bleaching, and (2) to investigate the relationships among changes in gel temperature, tooth shade and hydrogen peroxide (HP) concentration during laser irradiation. Altogether, 116 bovine teeth were bleached using a 30% HP gel, some of them with gel only and others with gel plus one of the two lasers (532 or 808 nm) at two different powers (2 and 4 W). The KTP laser produced a significant shade variation with a minimal temperature increase. The diode laser led to a higher temperature increase with a greater reduction in HP concentration, but the change in shade was only statistically significant with a power of 4 W. At a power of 2 W, the KTP laser caused a greater change in shade than the diode laser. No significant correlations were found among temperature, HP concentration and shade variation. The KTP laser appears to provide better results with less dangerous thermal increases than the diode laser. This might call into question most of the literature affirming that the action of laser bleaching is by increasing the gel temperature and, consequently, the speed of the redox reaction. Further study is required to investigate the correlations between the parameters investigated and efficacy of the bleaching process.

High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

NASA Astrophysics Data System (ADS)

Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

2017-11-01

Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (<3cm -1 ), a high internal efficiency (94%) and a low transparency current density (100A/cm2). For an AR-HR coated ridge Fabry Perot laser, we obtain a power of 230mW with M2=1.3. An optical power of 150mW was obtained at 854nm wavelength, 20°C for AR-HR coated devices. We obtain a single spatial mode emission with M2=1.21 and a SMSR over 30dB, both at 150mW. DFB Lasers at 852.12nm, corresponding to the D2 caesium transition, were then realised with a power of 40mW, 37°C for uncoated devices. The SMSR is over 30dB and the M2=1.33 at 40mW. Furthermore, the preliminary results of the linewidth obtained with a Fabry Perot interferometer give a value of less than 2MHz.

Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts

PubMed Central

Choi, Eun-Jeong; Yim, Ju-Young; Koo, Ki-Tae; Seol, Yang-Jo; Lee, Yong-Moo; Ku, Young; Rhyu, In-Chul; Chung, Chong-Pyoung

2010-01-01

Purpose It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm2. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm2 (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm2 energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm2 energy fluency than in the control. Conclusions The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs. PMID:20607054

Comparative scanning electron microscope analysis of diode laser and desensitizing toothpastes for evaluation of efficacy of dentinal tubular occlusion

PubMed Central

Reddy, Guntakala Vikram; Akula, Sushma; Malgikar, Suryakanth; Babu, Palaparthy Raja; Reddy, Gooty Jagadish; Josephin, Johnson Juliet

2017-01-01

Background: The present study aims to evaluate the efficacy of diode laser alone and in combination with desensitizing toothpastes in occluding dentinal tubules (both partially occluded and completely occluded tubules) by scanning electron microscope (SEM). Materials and Methods: Fifty human teeth were extracted, cervical cavities were prepared and etched with 17% ethylenediaminetetraacetic acid, and smear layer was removed to expose the tubules. The teeth were divided into five groups: Group I – Application of NovaMin-formulated toothpaste, Group II – Application of Pro-Argin™-formulated toothpaste, Group III – Application of diode laser in noncontact mode, Group IV – NovaMin-formulated toothpaste followed by laser irradiation, and Group V – Pro-Argin™-formulated toothpaste followed by laser irradiation. After treatment, quantitative analysis of occluded dentinal tubules was done by SEM analysis. Results: The mean values of percentages of total occlusion of dentinal tubules in Groups I, II, III, IV, and V were 92.73% ± 1.38, 90.67% ± 1.86, 96.57% ± 0.64, 97.3% ± 0.68, and 96.9% ± 6.08, respectively. Addition of diode laser (Groups III, IV, and V) yielded a significant occlusion of the dentinal tubules when compared to desensitizing toothpastes alone (Groups I and II). Conclusion: Diode laser (Group III) has shown more efficacy in occluding dentinal tubules when compared with desensitizing toothpastes which was statistically significant (P < 0.05). Among the five groups, NovaMin + diode laser (Group IV) showed the highest percentage of occluded dentinal tubules. PMID:29398853

Comparative clinical evaluation of gallium-aluminum-arsenide diode laser and potassium nitrate in treating dentinal hypersensitivity.

PubMed

Tevatia, Siddharth; Khatri, Vivek; Sharma, Nikhil; Dodwad, Vidya

2017-01-01

Dentinal hypersensitivity (DH) is a chronic disorder in which patients report sharp and acute pain to a variety of stimuli. Till date, a standardized procedure to treat DH is missing, though several alternative treatment strategies have been designed, including laser therapies. The aim of the study was to treat DH with minimum chemical concentration and least laser energy level with longer follow-up period. One hundred and twenty patients were randomly divided into four groups: (i) Group 1-5% potassium nitrate (KNO 3 ); (ii) Group 2 - gallium-aluminum-arsenide diode laser (62.2 J/cm 2 , wavelength - 980 nm, noncontact pulse mode, and power wattage - 0.5 W); (iii) Group 3 - combined 5% KNO 3 and the diode laser; and (iv) Group 4 - placebo (control). The visual analog scale (VAS) scores were recorded, analyzed, and compared to tactile stimuli, cold water, and air blast tests at different intervals for 6 weeks. Synergistic use of 5% KNO 3 and diode laser (Group 3) significantly reduced the DH pain, which was almost negligible after 6 th week (97%-99% of the pain was reported to be relieved) and showed promising results than any other studied groups. Further, the diode laser (Group 2) showed better results than 5% KNO 3 (Group 1). One-way ANOVA and Bonferroni correction post hoc test revealed the combination of groups with significant differences in the mean VAS scores at the different interval of time ( P < 0.01). Convincingly, the combined application of 5% KNO 3 with the diode laser can be recommended for treating DH patients.

Laser Brazing of High Temperature Braze Alloy

NASA Technical Reports Server (NTRS)

Gao, Y. P.; Seaman, R. F.; McQuillan, T. J.; Martiens, R. F.

2000-01-01

The Space Shuttle Main Engine (SSME) consists of 1080 conical tubes, which are furnace brazed themselves, manifolds, and surrounding structural jacket making almost four miles of braze joints. Subsequent furnace braze cycles are performed due to localized braze voids between the coolant tubes. SSME nozzle experiences extremely high heat flux (180 mW/sq m) during hot fire. Braze voids between coolant tubes may result in hot combustion gas escape causing jacket bulges. The nozzle can be disqualified for flight or result in mission failure if the braze voids exceed the limits. Localized braze processes were considered to eliminate braze voids, however, damage to the parent materials often prohibited use of such process. Being the only manned flight reusable rocket engine, it has stringent requirement on the braze process. Poor braze quality or damage to the parent materials limits the nozzle service life. The objective of this study was to develop a laser brazing process to provide quality, localized braze joints without adverse affect on the parent materials. Gold (Au-Cu-Ni-Pd-Mn) based high temperature braze alloys were used in both powder and wire form. Thin section iron base superalloy A286 tube was used as substrate materials. Different Laser Systems including CO2 (10.6 micrometers, 1kW), ND:YAG (1.06 micrometers, 4kW). and direct diode laser (808nm. 150W) were investigated for brazing process. The laser process variables including wavelength. laser power, travel speed and angle of inclination were optimized according to bead geometry and braze alloy wetting at minimum heat input level, The properties of laser brazing were compared to that of furnace brazing. Microhardness profiles were used for braze joint property comparison between laser and furnace brazing. The cooling rate of laser brazing was compared to furnace brazing based on secondary dendritic arm spacing, Both optical and Scanning Electron Microscope (SEM) were used to evaluate the microstructures of the braze materials and tube substrate. Metallography of the laser braze joint was compared to the furnace braze. SEM Energy Disperse X-Ray Spectra (EDX) and back scattered imaging were used to analyze braze alloy segregation. Although all of the laser systems, CO2, ND:YAG, and direct diode laser produced good braze joint, the direct diode laser was selected for its system simplicity, compactness and portability. Excellent laser and braze alloy coupling is observed with powder alloy compared to braze alloy wire. Good wetting is found with different gold based braze alloys. The laser brazing process can be optimized so that the adverse affect on the parent materials can be eliminated. Metallography of the laser braze joint has shown that quality braze joint was produced with laser brazing process. Penetration of the laser braze to the substrate is at neglectable level. Zero penetration is observed. Microstructure examinations shown that no observable changes of the microstructure (grain structure and precipitation) in the HAZ area between laser braze and furnace braze. Wide gaps can be laser brazed with single pass for up to 0.024 inches. Finer dendritic structure is observed in laser brazing compared with equiaxial and coarser grain of the furnace brazing microstructure. Greater segregation is also found in the furnace braze. Higher hardness of the laser braze joint comparing to furnace braze is observed due to the fast cooling rate and Finer microstructure in the laser brazing. Laser braze joint properties meet or exceed the furnace joint properties. Direct diode laser for thin section tube brazing with high temperature braze alloys have been successfully demonstrated. The laser's high energy density and precise control has shown significant advantages in reducing process heat input to the substrates and provide high quality braze joints comparing to other localized braze process such as torch, TIG, and MPTA processes. Significant cost savings can be realized particularly with localized braze comparing to a full furnace braze cycle.

Experimental investigation of a diode-pumped powerful continuous-wave dual-wavelength Nd:YAG laser at 946 and 938.6 nm

NASA Astrophysics Data System (ADS)

Chen, F.; Yu, X.; Yan, R. P.; Li, X. D.; Li, D. J.; Yang, G. L.; Xie, J. J.; Guo, J.

2013-05-01

In this paper, a diode-pumped high-power continuous-wave (cw) dual-wavelength Nd:YAG laser at 946 and 938.6 nm is reported. By using an end-pumped structure, comparative experiments indicate that a 5 mm-length Nd:YAG crystal with a Nd3+-doping concentration of 0.3 at.% is favorable for high-power laser operation, and the optimal transmissivity of the output coupler is 9%. As a result, a maximum output power of 17.2 W for a dual-wavelength laser at 946 and 938.6 nm is obtained at an incident pump power of 75.9 W, corresponding to a slope efficiency of 26.5%. To the best of our knowledge, this is the highest output power of a quasi-three-level dual-wavelength laser using a conventional Nd:YAG crystal achieved to date. By using a traveling knife-edge method, the beam quality factor and far-field divergence angle at 17 W power level are estimated to be 4.0 and 6.13 mrad, respectively.

Clinical assessment of diode laser-assisted endoscopic intrasphenoidal vidian neurectomy in the treatment of refractory rhinitis.

PubMed

Lai, Wen-Sen; Cheng, Sheng-Yao; Lin, Yuan-Yung; Yang, Pei-Lin; Lin, Hung-Che; Cheng, Li-Hsiang; Yang, Jinn-Moon; Lee, Jih-Chin

2017-12-01

For chronic rhinitis that is refractory to medical therapy, surgical intervention such as endoscopic vidian neurectomy (VN) can be used to control the intractable symptoms. Lasers can contribute to minimizing the invasiveness of ENT surgery. The aim of this retrospective study is to compare in patients who underwent diode laser-assisted versus traditional VN in terms of operative time, surgical field, quality of life, and postoperative complications. All patients had refractory rhinitis with a poor treatment response to a 6-month trial of corticosteroid nasal sprays and underwent endoscopic VN between November 2006 and September 2015. They were non-randomly allocated into either a cold instrument group or a diode laser-assisted group. Vidian nerve was excised with a 940-nm continuous wave diode laser through a 600-μm silica optical fiber, utilizing a contact mode with the power set at 5 W. A visual analog scale (VAS) was used to grade the severity of the rhinitis symptoms for quality of life assessment before the surgery and 6 months after. Of the 118 patients enrolled in the study, 75 patients underwent cold instrument VN and 43 patients underwent diode laser-assisted VN. Patients in the laser-assisted group had a significantly lower surgical field score and a lower postoperative bleeding rate than those in the cold instrument group. Changes in the VAS were significant in preoperative and postoperative nasal symptoms in each group. The application of diode lasers for vidian nerve transection showed a better surgical field and a lower incidence of postoperative hemorrhage. Recent advancements in laser application and endoscopic technique has made VN safer and more effective. We recommend this surgical approach as a reliable and effective treatment for patients with refractory rhinitis.

High duty cycle hard soldered kilowatt laser diode arrays

NASA Astrophysics Data System (ADS)

Klumel, Genady; Karni, Yoram; Oppenheim, Jacob; Berk, Yuri; Shamay, Moshe; Tessler, Renana; Cohen, Shalom

2010-02-01

High-brightness laser diode arrays operating at a duty cycle of 10% - 20% are in ever-increasing demand for the optical pumping of solid state lasers and directed energy applications. Under high duty-cycle operation at 10% - 20%, passive (conductive) cooling is of limited use, while micro-coolers using de-ionized cooling water can considerably degrade device reliability. When designing and developing actively-cooled collimated laser diode arrays for high duty cycle operation, three main problems should be carefully addressed: an effective local and total heat removal, a minimization of packaging-induced and operational stresses, and high-precision fast axis collimation. In this paper, we present a novel laser diode array incorporating a built-in tap water cooling system, all-hard-solder bonded assembly, facet-passivated high-power 940 nm laser bars and tight fast axis collimation. By employing an appropriate layout of water cooling channels, careful choice of packaging materials, proper design of critical parts, and active optics alignment, we have demonstrated actively-cooled collimated laser diode arrays with extended lifetime and reliability, without compromising their efficiency, optical power density, brightness or compactness. Among the key performance benchmarks achieved are: 150 W/bar optical peak power at 10% duty cycle, >50% wallplug efficiency and <1° collimated fast axis divergence. A lifetime of >0.5 Ghots with <2% degradation has been experimentally proven. The laser diode arrays have also been successfully tested under harsh environmental conditions, including thermal cycling between -20°C and 40°C and mechanical shocks at 500g acceleration. The results of both performance and reliability testing bear out the effectiveness and robustness of the manufacturing technology for high duty-cycle laser arrays.

0.87-micron CSP diode lasers for spaceborne communications. [channeled-substrate-planar

NASA Technical Reports Server (NTRS)

Carlin, D. B.; Pultz, G. N.; Goldstein, B.

1987-01-01

Index-guided channeled-substrate-planar (CSP) AlGaAs diode lasers are being developed for reliable, high-power operation for use as sources in spaceborne optical communications systems. Although most work on this AlGaAs structure has been aimed at optimizing performance at output wavelengths less than 8400 A, emission in the 8700 A regime is also of interest. In particular, such wavelengths are required for use in the direct detection laser transceiver to be incorporated into NASA's advanced communications technology satellite, in order to avoid absorption of the light by the atmosphere when communicating with ground-based terminals. Lowest order spatial mode and substantially single longitudinal mode output has been observed in 0.87-micron CSP devices in excess of 50 mW cw and 100 mW 50 percent duty-cycle, with rms phase-front aberrations measured to be about lambda/40.

Efficacy of diode laser (810 and 940 nm) for facial skin tightening.

PubMed

Voravutinon, Nataya; Seawthaweesin, Kanikar; Bureethan, Apron; Srivipatana, Anchisa; Vejanurug, Patnapa

2015-12-01

Laser treatment has been introduced for facial skin tightening. However, no prior study has used a diode laser to treat facial skin laxity. To evaluate the efficacy and safety of a 810- and 940-nm diode laser (MeDioStarNeXT) for treating facial skin laxity. Thirty patients, with facial skin laxity grading scale II-IV, were enrolled in this study. Each patient underwent four sessions with a 810- and 940-nm diode laser (MeDioStarNeXT) treatment over 3-week intervals. Improvement in the laxity of facial skin was evaluated using a Cutometer MPA 580, spectrophotometer, and a grading scale. Significant improvement was observed with the Cutometer F3 and R7 parameters at 1 and 3 months after complete treatment, respectively. Physician assessment showed significant improvement in the laxity scale at 1 and 6 months after treatment. Approximately 10% of the patients reported mild pain or minor adverse events. Ninety-eight percent of the patients were satisfied with the treatments. Treatment with a diode laser (810 and 940 nm) is safe and may be effective for facial skin tightening. Maintenance treatment is necessary to sustain the effect of treatment. © 2015 Wiley Periodicals, Inc.

Subsurface optical stimulation of rat prostate cavernous nerves using a continuous wave, single mode, 1490 nm diode laser

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Stahl, Charlotte S. D.; Hutchens, Thomas C.; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2013-03-01

Successful identification of the cavernous nerves (CN's) during radical prostatectomy requires detection of the CN's through a thin layer of overlying fascia. This study explores the 1490 nm infrared (IR) diode laser wavelength for rapid and deep subsurface CN stimulation in a rat model, in vivo. A 150-mW, 1490-nm diode laser providing an optical penetration depth of 520 μm was used to stimulate the CN's in 8 rats through a single mode fiber optic probe with 1-mm-diameter spot and 15 s irradiation time. Successful ONS was judged by an intracavernous pressure response (ICP) in the rat penis. Subsurface ONS at 1490 nm was also compared with previous studies using 1455 and 1550 nm IR diode laser wavelengths. ONS was observed through fascia layers up to 380 μm thick using an incident laser power of 50 mW. ICP response times as short as 4.6 +/- 0.2 s were recorded using higher laser powers bust still below the nerve damage threshold. The 1490-nm diode laser represents a compact, low cost, high power, and high quality infrared light source for use in ONS. This wavelength provides deeper optical penetration than 1455 nm and more rapid and efficient nerve stimulation than 1550 nm.

Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

NASA Astrophysics Data System (ADS)

Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

2017-02-01

We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

High-power diode laser versus electrocautery surgery on human papillomavirus lesion treatment.

PubMed

Baeder, Fernando Martins; Santos, Maria Teresa Botti R; Pelino, Jose Eduardo Pelizon; Duarte, Danilo Antonio; Genovese, Walter Joao

2012-05-01

The use of high-power lasers has facilitated and improved human papillomavirus (HPV) treatment protocols and has also become very popular in recent years. This application has been more frequently used in hospitals, especially in gynecology. The present study aimed to evaluate the effects of high-power diode laser to remove oral lesions caused by HPV and the consequent effects on virus load following the wound tissue healing process compared with one of the most conventional surgical techniques involving electrocautery. Surgeries were performed on 5 patients who had 2 distinct lesions caused by HPV. All patients were submitted to both electrocautery and high-power diode laser. Following a 20-day period, when the area was healed, sample material was collected through curettage for virus load quantitative analysis.Observation verified the presence of virus in all the samples; however, surgeries performed with the laser also revealed a significant reduction in virus load per cell compared with those performed with electrocautery. The ease when handling the diode laser, because of the flexibility of its fibers and precision of its energy delivery system, provides high-accuracy surgery, which facilitates the treatment of large and/or multifocal lesions. The use of high-power diode laser is more effective in treatment protocols of lesions caused by HPV.

High power vertical stacked and horizontal arrayed diode laser bar development based on insulation micro-channel cooling (IMCC) and hard solder bonding technology

NASA Astrophysics Data System (ADS)

Wang, Boxue; Jia, Yangtao; Zhang, Haoyu; Jia, Shiyin; Liu, Jindou; Wang, Weifeng; Liu, Xingsheng

2018-02-01

An insulation micro-channel cooling (IMCC) has been developed for packaging high power bar-based vertical stack and horizontal array diode lasers, which eliminates many issues caused in its congener packaged by commercial copper formed micro-channel cooler(MCC), such as coefficient of thermal expansion (CTE) mismatch between cooler and diode laser bar, high coolant quality requirement (DI water) and channel corrosion and electro-corrosion induced by DI water if the DI-water quality is not well maintained The IMCC cooler separates water flow route and electrical route, which allows tap-water as coolant without electro-corrosion and therefore prolongs cooler lifetime dramatically and escalated the reliability of these diode lasers. The thickness of ceramic and copper in an IMCC cooler is well designed to minimize the CTE mismatch between laser bar and cooler, consequently, a very low "SMILE" of the laser bar can be achieved for small fast axis divergence after collimation. In additional, gold-tin hard solder bonding technology was also developed to minimize the risk of solder electromigration at high current density and thermal fatigue under hard-pulse operation mode. Testing results of IMCC packaged diode lasers are presented in this report.