Ocular hazards of Q-switched near-infrared lasers

NASA Astrophysics Data System (ADS)

Lund, David J.; Edsall, Peter R.; Stuck, Bruce E.

2003-06-01

The threshold for laser-induced retinal damage in the rhesus eye was determined for wavelengths between 900 nm and 1300 nm. The laser source was a tunable Optical Parametric Oscillator (OPO) pumped by the 3rd harmonic of a Nd:YAG laser. The laser pulse duration was 3.5 ns. The wavelength dependence of the injury threshold is consistent with the prediction of a model based on the transmission of the preretinal ocular media, absorption in the retinal pigment epithelium, and variation of irradiance diameter resulting from chromatic aberration of the eye optics for wavelengths shorter than 1150 nm but was less consistent for longer wavelengths. The threshold for 24-hour observation was slightly lower than the threshold for 1-hour observation. These data form a basis for reexamination of the currently defined MPEs for wavelengths longer than 1100 nm.

InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm{sup 2} at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dallner, Matthias; Hau, Florian; Kamp, Martin

2015-01-26

Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm{sup 2} are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm{sup 2} at a record wavelength of 7 μm for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, amore » further reduction of the threshold current density to 800 A/cm{sup 2} was achieved for a 30 stage device.« less

Precision Laser Annealing of Focal Plane Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bender, Daniel A.; DeRose, Christopher; Starbuck, Andrew Lea

2015-09-01

We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing windowmore » over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.« less

Analysis of lasers as a solution to efficiency droop in solid-state lighting

DOE PAGES

Chow, Weng W.; Crawford, Mary H.

2015-10-06

This letter analyzes the proposal to mitigate the efficiency droop in solid-state light emitters by replacing InGaN light-emitting diodes (LEDs) with lasers. The argument in favor of this approach is that carrier-population clamping after the onset of lasing limits carrier loss to that at threshold, while stimulated emission continues to grow with injection current. A fully quantized (carriers and light) theory that is applicable to LEDs and lasers (above and below threshold) is used to obtain a quantitative evaluation. The results confirm the potential advantage of higher laser output power and efficiency above lasing threshold, while also indicating disadvantages includingmore » low efficiency prior to lasing onset, sensitivity of lasing threshold to temperature, and the effects of catastrophic laser failure. As a result, a solution to some of these concerns is suggested that takes advantage of recent developments in nanolasers.« less

Low threshold interband cascade lasers operating above room temperature

NASA Technical Reports Server (NTRS)

Hill, C. J.; Yang, B.; Yang, R. Q.

2003-01-01

Mid-IR type-II interband cascade lasers were demonstrated in pulsed mode at temperatures up to 325 K and in continuous mode up to 200 K. At 80 K, the threshold current density was 8.9 A/cm2 and a cw outpout power of 140 mW/facet was obtained.

Wavelength dependence of laser-induced retinal injury

NASA Astrophysics Data System (ADS)

Lund, David J.; Edsall, Peter; Stuck, Bruce E.

2005-04-01

The threshold for laser-induced retinal damage is dependent primarily upon the laser wavelength and the exposure duration. The study of the wavelength dependence of the retinal damage threshold has been greatly enhanced by the availability of tunable lasers. The Optical Parametric Oscillator (OPO), capable of providing useful pulse energy throughout a tuning range from 400 nm to 2200 nm, made it possible to determine the wavelength dependence of laser-induced retinal damage thresholds for q-switched pulses throughout the visible and NIR spectrum. Studies using the a tunable TI:Saph laser and several fixed-wavelength lasers yielded threshold values for 0.1 s exposures from 440 nm to 1060 nm. Laser-induced retinal damage for these exposure durations results from thermal conversion of the incident laser irradiation and an action spectrum for thermal retinal damage was developed based on the wavelength dependent transmission and absorption of ocular tissue and chromatic aberration of the eye optics. Long (1-1000s) duration exposures to visible laser demonstrated the existence of non-thermal laser-induced retinal damage mechanisms having a different action spectrum. This paper will present the available data for the wavelength dependence of laser-induced thermal retinal damage and compare this data to the maximum permissible exposure levels (MPEs) provided by the current guidelines for the safe use of lasers.

High-wafer-yield, high-performance vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Li, Gabriel S.; Yuen, Wupen; Lim, Sui F.; Chang-Hasnain, Constance J.

1996-04-01

Vertical cavity surface emitting lasers (VCSELs) with very low threshold current and voltage of 340 (mu) A and 1.5 V is achieved. The molecular beam epitaxially grown wafers are grown with a highly accurate, low cost and versatile pre-growth calibration technique. One- hundred percent VCSEL wafer yield is obtained. Low threshold current is achieved with a native oxide confined structure with excellent current confinement. Single transverse mode with stable, predetermined polarization direction up to 18 times threshold is also achieved, due to stable index guiding provided by the structure. This is the highest value reported to data for VCSELs. We have established that p-contact annealing in these devices is crucial for low voltage operation, contrary to the general belief. Uniform doping in the mirrors also appears not to be inferior to complicated doping engineering. With these design rules, very low threshold voltage VCSELs are achieved with very simple growth and fabrication steps.

Red-emitting Ga/As,P///In,Ga/P heterojunction lasers

NASA Technical Reports Server (NTRS)

Kressel, H.; Nuese, C. J.; Olsen, G. H.

1978-01-01

The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.

Algorithm for measuring the internal quantum efficiency of individual injection lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sommers, H.S. Jr.

1978-05-01

A new algorithm permits determination of the internal quantum efficiency eta/sub i/ of individual lasers. Above threshold, the current is partitioned into a ''coherent'' component driving the lasing modes and the ''noncoherent'' remainder. Below threshold the current is known to grow as exp(qV/n/sub 0/KT); the algorithm proposes that extrapolation of this equation into the lasing region measures the noncoherent remainder, enabling deduction of the coherent component and of its current derivative eta/sub i/. Measurements on five (AlGa)As double-heterojunction lasers cut from one wafer demonstrate the power of the new method. Comparison with band calculations of Stern shows that n/sub 0/more » originates in carrier degeneracy.« less

Visible GaAs/0.7/P/0.3/ CW heterojunction lasers

NASA Technical Reports Server (NTRS)

Kressel, H.; Olsen, G. H.; Nuese, C. J.

1977-01-01

The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).

Saturable nonlinear dielectric waveguide with applications to broad-area semiconductor lasers.

PubMed

Mehuys, D; Mittelstein, M; Salzman, J; Yariv, A

1987-11-01

Self-focusing in a passive dielectric waveguide with a saturable nonlinearity is studied. The eigensolutions constitute a good approximation to the lateral modes of broad-area semiconductor lasers under low-duty-cycle pulsed conditions. The laser modes are predicted to consist of adjacent filaments coupled in phase, leading to a single-lobed far field, and to be stable with increased current injection above saturation intensity. The ultimate filament spacing is inversely proportional to the threshold gain, and thus wider filaments are expected in low-threshold broad-area lasers.

Pulsed operation of (Al,Ga,In)N blue laser diodes

NASA Astrophysics Data System (ADS)

Abare, Amber C.; Mack, Michael P.; Hansen, Mark W.; Sink, R. K.; Kozodoy, Peter; Keller, Sarah L.; Hu, Evelyn L.; Speck, James S.; Bowers, John E.; Mishra, Umesh K.; Coldren, Larry A.; DenBaars, Steven P.

1998-04-01

Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. A combination of atmospheric and low pressure metal organic chemical vapor deposition (MOCVD) using a modified two-flow horizontal reactor was employed. The emission is strongly TE polarized and has a sharp transition in the far field pattern above threshold. Threshold current densities as low as 12.6 kA/cm2 were observed for 10 X 1200 micrometer lasers with uncoated reactive ion etched (RIE) facets on c-plane sapphire. Cleaved facet lasers were also demonstrated with similar performance on a-plane sapphire. Differential efficiencies as high as 7% and output powers up to 77 mW were observed. Laser diodes tested under pulsed conditions operated up to 6 hours at room temperature. Performance was limited by resistive heating during the electrical pulses. Lasing was achieved up to 95 degrees Celsius and up to a 150 ns pulse length (RT). Threshold current increased with temperature with a characteristic temperature, T0, of 125 K.

Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study

DOE PAGES

Michael, Stephan; Chow, Weng; Schneider, Hans

2016-05-01

In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density canmore » compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.« less

Infrared laser damage thresholds in corneal tissue phantoms using femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Boretsky, Adam R.; Clary, Joseph E.; Noojin, Gary D.; Rockwell, Benjamin A.

2018-02-01

Ultrafast lasers have become a fixture in many biomedical, industrial, telecommunications, and defense applications in recent years. These sources are capable of generating extremely high peak power that can cause laser-induced tissue breakdown through the formation of a plasma upon exposure. Despite the increasing prevalence of such lasers, current safety standards (ANSI Z136.1-2014) do not include maximum permissible exposure (MPE) values for the cornea with pulse durations less than one nanosecond. This study was designed to measure damage thresholds in corneal tissue phantoms in the near-infrared and mid-infrared to identify the wavelength dependence of laser damage thresholds from 1200-2500 nm. A high-energy regenerative amplifier and optical parametric amplifier outputting 100 femtosecond pulses with pulse energies up to 2 mJ were used to perform exposures and determine damage thresholds in transparent collagen gel tissue phantoms. Three-dimensional imaging, primarily optical coherence tomography, was used to evaluate tissue phantoms following exposure to determine ablation characteristics at the surface and within the bulk material. The determination of laser damage thresholds in the near-IR and mid-IR for ultrafast lasers will help to guide safety standards and establish the appropriate MPE levels for exposure sensitive ocular tissue such as the cornea. These data will help promote the safe use of ultrafast lasers for a wide range of applications.

Room-Temperature Spin Polariton Diode Laser

NASA Astrophysics Data System (ADS)

Bhattacharya, Aniruddha; Baten, Md Zunaid; Iorsh, Ivan; Frost, Thomas; Kavokin, Alexey; Bhattacharya, Pallab

2017-08-01

A spin-polarized laser offers inherent control of the output circular polarization. We have investigated the output polarization characteristics of a bulk GaN-based microcavity polariton diode laser at room temperature with electrical injection of spin-polarized electrons via a FeCo /MgO spin injector. Polariton laser operation with a spin-polarized current is characterized by a threshold of ˜69 A / cm2 in the light-current characteristics, a significant reduction of the electroluminescence linewidth and blueshift of the emission peak. A degree of output circular polarization of ˜25 % is recorded under remanent magnetization. A second threshold, due to conventional photon lasing, is observed at an injection of ˜7.2 kA /cm2 . The variation of output circular and linear polarization with spin-polarized injection current has been analyzed with the carrier and exciton rate equations and the Gross-Pitaevskii equations for the condensate and there is good agreement between measured and calculated data.

Infrared skin damage thresholds from 1319-nm continuous-wave laser exposures

NASA Astrophysics Data System (ADS)

Oliver, Jeffrey W.; Vincelette, Rebecca; Noojin, Gary D.; Clark, Clifton D.; Harbert, Corey A.; Schuster, Kurt J.; Shingledecker, Aurora D.; Kumru, Semih S.; Maughan, Justin; Kitzis, Naomi; Buffington, Gavin D.; Stolarski, David J.; Thomas, Robert J.

2013-12-01

A series of experiments were conducted in vivo using Yucatan miniature pigs (Sus scrofa domestica) to determine thermal damage thresholds to the skin from 1319-nm continuous-wave Nd:YAG laser irradiation. Experiments employed exposure durations of 0.25, 1.0, 2.5, and 10 s and beam diameters of ˜0.6 and 1 cm. Thermal imagery data provided a time-dependent surface temperature response from the laser. A damage endpoint of fifty percent probability of a minimally visible effect was used to determine threshold for damage at 1 and 24 h postexposure. Predicted thermal response and damage thresholds are compared with a numerical model of optical-thermal interaction. Resultant trends with respect to exposure duration and beam diameter are compared with current standardized exposure limits for laser safety. Mathematical modeling agreed well with experimental data, predicting that though laser safety standards are sufficient for exposures <10 s, they may become less safe for very long exposures.

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

NASA Technical Reports Server (NTRS)

Bar-Chaim, N.; Harder, CH.; Margalit, S.; Yariv, A.; Katz, J.; Ury, I.

1982-01-01

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

Laser-induced retinal injury thresholds: variation with retinal irradiated area

NASA Astrophysics Data System (ADS)

Lund, David J.; Schulmeister, Karl; Seiser, Bernhard; Edthofer, Florian

2005-04-01

The retinal injury threshold for exposure to a laser source varies as a function of the irradiated area on the retina. Currently accepted guidelines for the safe use of lasers provide that the MPE will increase as the diameter of the irradiated area for retinal diameters between 25 mm and 1700 mm, based on the ED50 data available in the late 1970s. Recent studies by Zuclich and Lund produced data showing that the ED50 for ns-duration exposures at 532 nm and ms duration exposures at 590 nm varied as the square of the diameter of the irradiated area on the retina. This paper will discuss efforts to resolve the disagreement between the new data and the earlier data though an analysis of all accessible data relating the retinal injury threshold to the diameter of the incident beam on the retina and through simulations using computer models of laser-induced injury. The results show that the retinal radiant exposure required to produce retinal injury is a function of both exposure duration and retinal irradiance diameter and that the current guidelines for irradiance diameter dependence do not accurately reflect the variation of the threshold data.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Extraction-controlled terahertz frequency quantum cascade lasers with a diagonal LO-phonon extraction and injection stage.

PubMed

Han, Y J; Li, L H; Grier, A; Chen, L; Valavanis, A; Zhu, J; Freeman, J R; Isac, N; Colombelli, R; Dean, P; Davies, A G; Linfield, E H

2016-12-12

We report an extraction-controlled terahertz (THz)-frequency quantum cascade laser design in which a diagonal LO-phonon scattering process is used to achieve efficient current injection into the upper laser level of each period and simultaneously extract electrons from the adjacent period. The effects of the diagonality of the radiative transition are investigated, and a design with a scaled oscillator strength of 0.45 is shown experimentally to provide the highest temperature performance. A 3.3 THz device processed into a double-metal waveguide configuration operated up to 123 K in pulsed mode, with a threshold current density of 1.3 kA/cm² at 10 K. The QCL structures are modeled using an extended density matrix approach, and the large threshold current is attributed to parasitic current paths associated with the upper laser levels. The simplicity of this design makes it an ideal platform to investigate the scattering injection process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michael, Stephan; Chow, Weng; Schneider, Hans

In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density canmore » compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.« less

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-frequency impedance and spontaneous carrier lifetime in narrow-stripe semiconductor injection lasers

NASA Astrophysics Data System (ADS)

Hoernlein, W.

1988-11-01

Measurements were made of the complex reflection coefficient of hf (10-400 MHz) signals from semiconductor injection lasers supplied with a direct bias current ranging from several milliamperes up to the threshold value or higher. The hf impedance was calculated. The parameters of the equivalent electrical circuit made it possible to predict the modulation characteristics. The impedance corresponding to currents below the lasing threshold was used to find the differential carrier lifetime from the RC constant of the p-n junction of a laser diode. A description of the apparatus is supplemented by an account of the method used in calculation of the electrical parameters and carrier lifetimes. The first results obtained using this apparatus and method are reported.

Laser diodes using InAlGaAs multiple quantum wells intermixed to varying extent

NASA Astrophysics Data System (ADS)

Alahmadi, Yousef; LiKam Wa, Patrick

2018-02-01

Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-free disordering technique. Varying degrees of disordering are achieved by rapidly annealing silicon nitride-capped samples at temperatures ranging from 730°C to 830°C for 20 s. The lasing wavelength shift resulting from the intermixing, ranges between 28.2 nm and 147.2 nm. As the annealing temperature is increased, the lasing threshold currents of the fabricated waveguide lasers increase from 25mA to 45mA, while the slope efficiency decrease from 0.101 W/A to 0.068 W/A, compared to a threshold current of 27.8 mA and a slope efficiency of 0.121 W/A for an as-grown laser diode.

Power scaling of ultrafast laser inscribed waveguide lasers in chromium and iron doped zinc selenide.

PubMed

McDaniel, Sean A; Lancaster, Adam; Evans, Jonathan W; Kar, Ajoy K; Cook, Gary

2016-02-22

We report demonstration of Watt level waveguide lasers fabricated using Ultrafast Laser Inscription (ULI). The waveguides were fabricated in bulk chromium and iron doped zinc selenide crystals with a chirped pulse Yb fiber laser. The depressed cladding structure in Fe:ZnSe produced output powers of 1 W with a threshold of 50 mW and a slope efficiency of 58%, while a similar structure produced 5.1 W of output in Cr:ZnSe with a laser threshold of 350 mW and a slope efficiency of 41%. These results represent the current state-of-the-art for ULI waveguides in zinc based chalcogenides.

All-MOCVD-grown BH laser on P-InP substrates

NASA Astrophysics Data System (ADS)

Nishimura, Tadashi; Ishimura, E.; Nakajima, Yasuo; Tada, Hitoshi; Kimura, T.; Ohkura, Y.; Goto, Katsuhiko; Omura, Etsuji; Aiga, Masao

1993-07-01

A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Kucharska, A.I.; Foxon, C.T.

1989-09-18

Using quantum well laser devices with a window in the {ital p}-type contact, we have measured the relative change of spontaneous emission intensity at threshold with temperature for 58-A-wide GaAs wells. Over the range 250--340 K the data are in good agreement with the linear relation obtained from a gain-current calculation which includes transition broadening. This linear behavior contrasts with the stronger temperature dependence of the total measured threshold current of the same devices which includes nonradiative barrier recombination processes.

Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Babichev, A. V.; Karachinsky, L. Ya.

2015-11-15

The lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping are demonstrated. The quantum-cascade laser heterostructure is grown by molecular-beam epitaxy technique. Despite the relatively short laser cavity length and high level of external loss the laser shows the lasing in the temperature range of 80–220 K. The threshold current density below 4 kA/cm{sup 2} at 220 K with the characteristic temperature T{sub 0} = 123 K was demonstrated.

Iodine-stabilized single-frequency green InGaN diode laser.

PubMed

Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-01-01

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirch, J. D.; Chang, C.-C.; Boyle, C.

2015-04-13

By stepwise tapering, both the barrier heights and quantum-well depths in the active regions of 8.7–8.8 μm-emitting quantum-cascade-laser (QCL) structures, virtually complete carrier-leakage suppression is achieved. Such step-taper active-region-type QCLs possess, for 3 mm-long devices with high-reflectivity-coated back facets, threshold-current characteristic temperature coefficients, T{sub 0}, as high as 283 K and slope-efficiency characteristic temperature coefficients, T{sub 1}, as high as 561 K, over the 20–60 °C heatsink-temperature range. These high T{sub 0} and T{sub 1} values reflect at least a factor of four reduction in carrier-leakage current compared to conventional 8–9 μm-emitting QCLs. Room temperature, pulsed, threshold-current densities are 1.58 kA/cm{sup 2}; values comparable to those formore » 35-period conventional QCLs of similar injector-region doping level. Superlinear behavior of the light-current curves is shown to be the result of the onset of resonant extraction from the lower laser level at a drive level of ∼1.3× threshold. Maximum room-temperature slope efficiencies are 1.23 W/A; that is, slope efficiency per period values of 35 mW/A, which are 37%–40% higher than for same-geometry conventional 8–9 μm-emitting QCLs. Since the waveguide-loss coefficients are very similar, we estimate that the internal differential efficiency is at least 30% higher than in conventional QCLs. Such high internal differential efficiency values reflect the combined effect of nearly complete carrier-leakage suppression and high differential efficiency of the laser transition (∼90%), due to resonant extraction from the lower laser level.« less

Characterization and modeling of 1.3 micron indium arsenide quantum dot lasers

NASA Astrophysics Data System (ADS)

Dikshit, Amit A.

2006-12-01

Quantum-dot (QD) lasers have the potential to offer superior characteristics compared to currently used QW lasers in optical fiber communications. In this work we have performed modeling and characterization of QD lasers with an aim to understand the physics in order to design better lasers in the future. A comprehensive analytical model is built which explains the observed temperature sensitivity of threshold current in QD lasers. The model shows that the ratio of excitons and free carriers is important to accurately model the carrier distribution and hence temperature performance of QD lasers. To understand the recombination mechanisms in QD lasers, carrier lifetime measurements were performed along with advanced numerical rate equation modeling. The carrier lifetime measurements were performed using the small-signal optical response and impedance technique. The rate equation models were then used to extract the recombination coefficients in QD lasers which represent the strength of various recombination mechanisms. Using these measurements and the rate equation models it is shown that Auger recombination is the dominant contribution to current and comprises approximately 80% of current at threshold. Further, we investigated the origin of the low injection efficiencies observed in QD lasers using a rate equation model that included the effect of inhomogeneous broadening. It is shown that the observed low injection efficiencies are likely a consequence of the cavity length vs. slope efficiency measurement technique, and therefore do not represent the intrinsic or true injection efficiencies in QD lasers. The limitation of this commonly used technique arises from the carrier occupation of non-lasing states in the inhomogeneously broadened QD ensemble.

Monolayer semiconductor nanocavity lasers with ultralow thresholds.

PubMed

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

2015-04-02

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Monolayer semiconductor nanocavity lasers with ultralow thresholds

NASA Astrophysics Data System (ADS)

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

2015-04-01

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Precluding nonlinear ISI in direct detection long-haul fiber optic systems

NASA Technical Reports Server (NTRS)

Swenson, Norman L.; Shoop, Barry L.; Cioffi, John M.

1991-01-01

Long-distance, high-rate fiber optic systems employing directly modulated 1.55-micron single-mode lasers and conventional single-mode fiber suffer severe intersymbol interference (ISI) with a large nonlinear component. A method of reducing the nonlinearity of the ISI, thereby making linear equalization more viable, is investigated. It is shown that the degree of nonlinearity is highly dependent on the choice of laser bias current, and that in some cases the ISI nonlinearity can be significantly reduced by biasing the laser substantially above threshold. Simulation results predict that an increase in signal-to-nonlinear-distortion ratio as high as 25 dB can be achieved for synchronously spaced samples at an optimal sampling phase by increasing the bias current from 1.2 times threshold to 3.5 times threshold. The high SDR indicates that a linear tapped delay line equalizer could be used to mitigate ISI. Furthermore, the shape of the pulse response suggests that partial response precoding and digital feedback equalization would be particularly effective for this channel.

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

NASA Technical Reports Server (NTRS)

Kim, Jae-Hoon; Larsson, Anders; Lee, Luke P.

1991-01-01

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Damage resistant optics for a mega-joule solid-state laser

NASA Astrophysics Data System (ADS)

Campbell, J. H.; Rainer, F.; Kozlowski, M. R.; Wolfe, C. R.; Thomas, I.; Milanovich, F.

1990-12-01

Research on Inertial Confinement Fusion (ICF) has progressed rapidly in the past several years. As a consequence, LLNL is developing plans to upgrade the current 120 kJ solid state (Nd3+ phosphate glass) Nova laser to a 1.5 to 2 megajoule system with the goal of achieving fusion ignition. The design of the planned Nova Upgrade is briefly discussed. Because of recent improvements in the damage resistance of optical materials it is now technically and economically feasible to build a megajoule-class solid state laser. Specifically, the damage threshold of Nd(+3)-doped phosphate laser glass, multilayer dielectric coatings, and non-linear optical crystals (e.g., KDP) have been dramatically improved. These materials now meet the fluence requirements for a 1.5 to 2 MJ Nd(+3)-glass laser operating at 1054 and 351 nm and at a pulse length of 3 ns. The recent improvements in damage thresholds are reviewed; threshold data at both 1064 and 355 nm and the measured pulse length scaling are presented.

Damage resistant optics for a megajoule solid state laser

NASA Astrophysics Data System (ADS)

Campbell, Jack H.; Rainer, Frank; Kozlowski, Mark R.; Wolfe, C. Robert; Thomas, Ian M.; Milanovich, Fred P.

1991-06-01

Research on Inertial Confinement Fusion (ICF) has progressed rapidly in the past several years. As a consequence LLNL is developing plans to upgrade the current 120 kJ solid state (Nd3-phosphate glass) Nova laser to a 1 . 5 to 2 megajoule system with the goal of achieving fusion ignition. The design of the planned Nova Upgrade is briefly discussed. Because of recent improvements in the damage resistance of optical materials it is now technically and economically feasible to build a megajoule-class solid state laser. Specifically the damage threshold of Nd3- doped phosphate laser glass muliilayer dielectric coatings and non-linear optical crystals (e. g. KDP) have been dramatically improved. These materials now meet the fluence requirements for a 1. 5-2 MJ Nd3-glass laser operating at 1054 and 351 nm and at a pulse length of 3 ns. The recent improvements in damage thresholds are reviewed threshold data at both 1064 and 355 nm and the measured pulse length scaling are presented. 1.

Improving the Fabrication of Semiconductor Bragg Lasers

NASA Astrophysics Data System (ADS)

Chen, Eric Ping Chun

Fabrication process developments for Bragg reflection lasers have been optimized in this thesis using resources available to the group. New e-beam lithography and oxide etch recipes have been developed to minimize sidewall roughness and residues. E-beam evaporated metal contacts for semiconductor diode laser utilizing oblique angle deposition have also been developed in-house for the first time. Furthermore, improvement in micro-loading effect of DFB laser etching has been demonstrated where the ratio of tapered portion of the sidewall to total etch depth is reduced by half, from 33% to 15%. Electrical, optical and thermal performance of the fabricated lasers are characterized. Comparing the results to previous generation lasers, average dynamic resistance is decreased drastically from 14 Ohms to 7 Ohms and threshold current density also reduced from 1705A/cm2 to 1383A/ cm2. Improvement in laser performance is result of reduced loss from optimized fabrication processes. BRL bow-tie tapered lasers is then fabricated for the first time and output power of 18mW at 200mA input is measured. Benefiting from the increased effective area and better carrier utilization, reduction in threshold current density from 1383A/cm 2 to 712A/cm2 is observed.

BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jijun; Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology; Akimoto, Ryoichi, E-mail: r-akimoto@aist.go.jp

2015-10-19

Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 Vmore » are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.« less

Circular lasers for telecommunications and rf/photonics applications

NASA Astrophysics Data System (ADS)

Griffel, Giora

2000-04-01

Following a review of ring resonator research in the past decade we shall report a novel bi-level etching technique that permits the use of standard photolithography for coupling to deeply-etched ring resonator structures. The technique is employed to demonstrate InGaAsP laterally- coupled racetrack ring resonators laser with record low threshold currents of 66 mA. The racetrack laser have curved sections of 150 micrometers radius with negligible bending loss. The lasers operate CW single mode up to nearly twice threshold with a 26 dB side-mode-suppression ratio. We shall also present a transfer matrix formalism for the analysis of ring resonator arrays and indicate application examples for flat band filter synthesis.

Temperature-insensitive long-wavelength (λ ≈14 µm) Quantum Cascade lasers with low threshold.

PubMed

Huang, Xue; Charles, William O; Gmachl, Claire

2011-04-25

We demonstrate high-performance, long-wavelength (λ ≈14 µm) Quantum Cascade (QC) lasers based on a diagonal optical transition and a "two-phonon-continuum" depletion scheme in which the lower laser level is depopulated by resonant longitudinal optical phonon scattering followed by scattering to a lower energy level continuum. A 2.8 mm long QC laser shows a low threshold current density of 2.0 kA/cm2, a peak output power of ~336 mW, and a slope efficiency of 375 mW/A, all at 300 K, with a high characteristic temperature T0 ~310 K over a wide temperature range from 240 K to 390 K.

2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit.

PubMed

Wang, Ruijun; Sprengel, Stephan; Boehm, Gerhard; Muneeb, Muhammad; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

2016-09-05

Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm² and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm² in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe

2015-12-28

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridgemore » of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.« less

2 Micrometers InAsSb Quantum-dot Lasers

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Uhl, David; Keo, Sam

2004-01-01

InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.

Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes

NASA Technical Reports Server (NTRS)

Kressel, H.; Ettenberg, M.; Ladany, I.

1978-01-01

Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease

Probing longitudinal modes evolution of a InGaN green laser diode

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsi; Lin, Wei-Chen; Chen, Hong-Zui; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-06-01

This study aims to investigate the longitudinal mode evolution of a InGaN green laser diode. A spectrometer with a 3-pm resolution was employed to obtain the emission spectra of a green laser diode, at a wavelength of around 520 nm, as a function of applied current and temperature. The spectral behavior of the laser modes with applied current was investigated. Right above the lasing threshold, the green diode laser emitted single longitudinal mode output. With increasing applied current, the number of the longitudinal modes increased. Up to ten lasing modes oscillated within the entire gain profile when the applied currents were tuned to 2.2Ith. Subsequently, a multi-Lorentzian profile model was adopted to analyze the spectra and observe how the modes evolved with temperature and applied current.

Two-step narrow ridge cascade diode lasers emitting near $$2~\\mu$$ m

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-01-02

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Alphonse, G. A.; Carlin, D. B.; Ettenberg, M.

1991-01-01

The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

Optimizing fluence and debridement effects on cutaneous resurfacing carbon dioxide laser surgery.

PubMed

Weisberg, N K; Kuo, T; Torkian, B; Reinisch, L; Ellis, D L

1998-10-01

To develop methods to compare carbon dioxide (CO2) resurfacing lasers, fluence, and debridement effects on tissue shrinkage and histological thermal denaturation. In vitro human or in vivo porcine skin samples received up to 5 passes with scanner or short-pulsed CO2 resurfacing lasers. Fluences ranging from 2.19 to 17.58 J/cm2 (scanner) and 1.11 to 5.56 J/cm2 (short pulsed) were used to determine each laser's threshold energy for clinical effect. Variable amounts of debridement were also studied. Tissue shrinkage was evaluated by using digital photography to measure linear distance change of the treated tissue. Tissue histological studies were evaluated using quantitative computer image analysis. Fluence-independent in vitro tissue shrinkage was seen with the scanned and short-pulsed lasers above threshold fluence levels of 5.9 and 2.5 J/cm2, respectively. Histologically, fluence-independent thermal depths of damage of 77 microns (scanner) and 25 microns (pulsed) were observed. Aggressive debridement of the tissue increased the shrinkage per pass of the laser, and decreased the fluence required for the threshold effect. In vivo experiments confirmed the in vitro results, although the in vivo threshold fluence level was slightly higher and the shrinkage obtained was slightly lower per pass. Our methods allow comparison of different resurfacing lasers' acute effects. We found equivalent laser tissue effects using lower fluences than those currently accepted clinically. This suggests that the morbidity associated with CO2 laser resurfacing may be minimized by lowering levels of tissue input energy and controlling for tissue debridement.

Intracavity widely-tunable quantum cascade laser spectrometer.

PubMed

Brownsword, Richard A; Weidmann, Damien

2013-01-28

A grating-tuned extended-cavity quantum cascade laser (EC-QCL) operating around 7.6 µm was assembled to provide a tuning range of ~80 cm⁻¹ with output power of up to 30 mW. The EC-QCL output power was shown to be sensitive to the presence of a broadband absorbing gas mixture contained in a 2-cm cell introduced inside the extended laser cavity. In this arrangement, enhanced absorption relative to single path linear absorption was observed. To describe observations, in the QCL rate-equation model was included the effect of intracavity absorption. The model qualitatively reproduced the absorption behavior observed. In addition, it allowed quantitative measurements of mixing ratio of dimethyl carbonate, which was used as a test broadband absorber. A number of alternative data acquisition and reduction methods were identified. As the intracavity absorber modifies the laser threshold current, phase-sensitive detection of the laser threshold current was found to be the most attractive way to determine the mixing ratio of the absorber. The dimethyl carbonate detection limit was estimated to be 1.4 ppmv for 10 second integration. Limitations and possible ways of improvements were also identified.

Nitride-based stacked laser diodes with a tunnel junction

NASA Astrophysics Data System (ADS)

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu; Takagi, Yasufumi; Maeda, Junya; Yoshida, Harumasa

2018-01-01

We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.

Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser.

PubMed

Kéfélian, Fabien; O'Donoghue, Shane; Todaro, Maria Teresa; McInerney, John; Huyet, Guillaume

2009-04-13

We report experimental investigations on a two-section 16-GHz repetition rate InAs/GaAs quantum dot passively mode-locked laser. Near the threshold current, pseudo-periodic Q-switching with complex dynamics is exhibited. Mode-locking operation regimes characterized by different repetition rates and timing jitter levels are encountered up to twice the threshold current. Evolution of the RF spectrum and optical spectrum with current is compared. The different mode-locked regimes are shown to be associated with different spectral and temporal shapes, ranging from 1.3 to 6 ps. This point is discussed by introducing the existence of two different supermodes. Repetition rate evolution and timing jitter increase is attributed to the coupling between the dominant and the secondary supermodes.

InGaN laser diode with metal-free laser ridge using n+-GaN contact layers

NASA Astrophysics Data System (ADS)

Malinverni, Marco; Tardy, Camille; Rossetti, Marco; Castiglia, Antonino; Duelk, Marcus; Vélez, Christian; Martin, Denis; Grandjean, Nicolas

2016-06-01

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n+-type GaN layer deposited on top of the structure. The low sheet resistance of the n+-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n+-GaN top layer and the p++-GaN layer. Continuous-wave lasing at 400 nm with an output power of 100 mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA·cm-2.

GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

PubMed

Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

2011-01-31

We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

Wavelength dependence of ocular damage thresholds in the near-ir to far-ir transition region: proposed revisions to MPES.

PubMed

Zuclich, Joseph A; Lund, David J; Stuck, Bruce E

2007-01-01

This report summarizes the results of a series of infrared (IR) laser-induced ocular damage studies conducted over the past decade. The studies examined retinal, lens, and corneal effects of laser exposures in the near-IR to far-IR transition region (wavelengths from 1.3-1.4 mum with exposure durations ranging from Q-switched to continuous wave). The corneal and retinal damage thresholds are tabulated for all pulsewidth regimes, and the wavelength dependence of the IR thresholds is discussed and contrasted to laser safety standard maximum permissible exposure limits. The analysis suggests that the current maximum permissible exposure limits could be beneficially revised to (1) relax the IR limits over wavelength ranges where unusually high safety margins may unintentionally hinder applications of recently developed military and telecommunications laser systems; (2) replace step-function discontinuities in the IR limits by continuously varying analytical functions of wavelength and pulsewidth which more closely follow the trends of the experimental retinal (for point-source laser exposures) and corneal ED50 threshold data; and (3) result in an overall simplification of the permissible exposure limits over the wavelength range from 1.2-2.6 mum. A specific proposal for amending the IR maximum permissible exposure limits over this wavelength range is presented.

Observation of LPI Thresholds for the Nike Laser

NASA Astrophysics Data System (ADS)

Weaver, J. L.; Oh, J.; Afeyan, B.; Charbonneau-Lefort, M.; Phillips, L.; Seely, J.; Kehne, D.; Brown, C.; Obenschain, S.; Schmitt, A. J.; Feldman, U.; Holland, G.; Lehmberg, R. H.; McLean, E.; Manka, C.

2008-11-01

The Nike laser is being used to study thresholds for laser plasma instabilities (LPI) at intensities (10^15-10^16 W/cm^2) relevant to advanced implosion designs for direct drive inertial confinement fusion. The combination of short wavelength (248 nm), large bandwidth (1-2 THz), and beam smoothing by induced spatial incoherence available with this krypton-fluoride laser make these experiments unique among current facilities. This talk will present an overview of results with an emphasis on the two-plasmon decay instability (2φp). Measurements of x-rays and emission near ^1/2φo and ^3/2 φo harmonics of the laser wavelength have been collected over a wide range of intensities for both solid and foam targets. Data indicate collective multiple-angle driven excitation compatible with previous observations using solid planar targets.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Computer model for quasioptic waveguide lasers

NASA Astrophysics Data System (ADS)

Wenzel, H.; Wünsche, H. J.

1988-11-01

A description is given of a numerical model of a semiconductor laser with a quasioptic waveguide (index guide). This model can be used on a personal computer. The model can be used to find the radiation field distributions in the vertical and lateral directions, the pump currents at the threshold, and also to solve dynamic rate equations.

Initial evaluation of commercially available InGaAsP DFB laser diodes for use in high-speed digital fiber optic transceivers

NASA Technical Reports Server (NTRS)

Cook, Anthony L.; Hendricks, Herbert D.

1990-01-01

NASA has been pursuing the development of high-speed fiber-optic transceivers for use in a number of space data system applications. Current efforts are directed toward a high-performance all-integrated-circuit transceiver operating up to the 3-5 Gb/s range. Details of the evaluation and selection of candidate high-speed optical sources to be used in the space-qualified high-performance transceiver are presented. Data on the performance of commercially available DFB (distributed feedback) lasers are presented, and their performance relative to each other and to their structural design with regard to their use in high-performance fiber-optic transceivers is discussed. The DFB lasers were obtained from seven commercial manufacturers. The data taken on each laser included threshold current, differential quantum efficiency, CW side mode suppression radio, wavelength temperature coefficient, threshold temperature coefficient, natural linewidth, and far field pattern. It was found that laser diodes with buried heterostructures and first-order gratings had, in general, the best CW operating characteristics. The modulated characteristics of the DFB laser diodes are emphasized. Modulated linewidth, modulated side mode suppression ratio, and frequency response are discussed.

InGaAsP/InP buried-heterostructure lasers /lambda = 1.5 microns/ with chemically etched mirrors

NASA Astrophysics Data System (ADS)

Adachi, S.; Kawaguchi, H.; Takahei, K.; Noguchi, Y.

1981-09-01

The monolithic fabrication of buried heterostructure InGaAsP/InP lasers operating at a wavelength of 1.5 microns with chemically etched mirrors is reported. The buried heterostructure lasers were prepared from InGaAsP/InP DH wafers reverse-mesa etched with a Br2:CH3OH solution, with the reverse-mesa walls buried by subsequent LPE growth. To fabricate the etched mirror laser, Au-Zn metal was evaporated onto the epitaxial-layer side of the wafer and an Au-Zn contact was defined by photolithography; photolithographic techniques were used to define a SiO2 mask directly over the Au-Zn contact for etched mirror definition using either 0.3 vol % Br2:CH3OH or HCl:CH3COOH:H2O2 1:2:1 solutions. A threshold current of 50 mA is obtained from lasers thus produced, which is nearly the same as that of conventionally fabricated cleaved-mirror lasers. The procedure presented thus allows low threshold-current devices to be obtained with a much greater flexibility in design and fabrication than previously attained.

Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

NASA Astrophysics Data System (ADS)

Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

2017-07-01

Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gu, Y.; Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn; Ma, Y. J.

This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In{sub 0.8}Al{sub 0.2}As template layers. The continuous-wave threshold current density is 797 A/cm{sup 2} and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm{sup 2} per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.

Supra-threshold epidermis injury from near-infrared laser radiation prior to ablation onset

NASA Astrophysics Data System (ADS)

DeLisi, Michael P.; Peterson, Amanda M.; Lile, Lily A.; Noojin, Gary D.; Shingledecker, Aurora D.; Stolarski, David J.; Zohner, Justin J.; Kumru, Semih S.; Thomas, Robert J.

2017-02-01

With continued advancement of solid-state laser technology, high-energy lasers operating in the near-infrared (NIR) band are being applied in an increasing number of manufacturing techniques and medical treatments. Safety-related investigations of potentially harmful laser interaction with skin are commonplace, consisting of establishing the maximum permissible exposure (MPE) thresholds under various conditions, often utilizing the minimally-visible lesion (MVL) metric as an indication of damage. Likewise, characterization of ablation onset and velocity is of interest for therapeutic and surgical use, and concerns exceptionally high irradiance levels. However, skin injury response between these two exposure ranges is not well understood. This study utilized a 1070-nm Yb-doped, diode-pumped fiber laser to explore the response of excised porcine skin tissue to high-energy exposures within the supra-threshold injury region without inducing ablation. Concurrent high-speed videography was employed to assess the effect on the epidermis, with a dichotomous response determination given for three progressive damage event categories: observable permanent distortion on the surface, formation of an epidermal bubble due to bounded intra-cutaneous water vaporization, and rupture of said bubble during laser exposure. ED50 values were calculated for these categories under various pulse configurations and beam diameters, and logistic regression models predicted injury events with approximately 90% accuracy. The distinction of skin response into categories of increasing degrees of damage expands the current understanding of high-energy laser safety while also underlining the unique biophysical effects during induced water phase change in tissue. These observations could prove useful in augmenting biothermomechanical models of laser exposure in the supra-threshold region.

Visible lesion thresholds with pulse duration, spot size dependency, and model predictions for 1.54-microm, near-infrared laser pulses penetrating porcine skin.

PubMed

Cain, Clarence P; Schuster, Kurt J; Zohner, Justin J; Stockton, Kevin L; Stolarski, David J; Thomas, Robert J; Rockwell, Benjamin A; Roach, William P

2006-01-01

Er:glass lasers have been in operation with both long pulses (hundreds of microseconds) and Q-switched pulses (50 to 100 ns) for more than 35 yr. The ocular hazards of this laser were reported early, and it was determined that damage to the eye from the 1.54-microm wavelength occurred mainly in the cornea where light from this wavelength is highly absorbed. Research on skin hazards has been reported only in the past few years because of limited pulse energies from these lasers. Currently, however, with pulse energies in the hundreds of joules, these lasers may be hazardous to the skin in addition to being eye hazards. We report our minimum visible lesion (MVL) threshold measurements for two different pulse durations and three different spot sizes for the 1.54-microm wavelength using porcine skin as an in vivo model. We also compare our measurements to results from our model, based on the heat transfer equation and the rate process equation. Our MVL-ED50 thresholds for the long pulse (600 micros) at 24 h postexposure were measured to be 20, 8.1, and 7.4 J cm(-2) for spot diameters of 0.7, 1.0, and 5 mm, respectively. Q-switched laser pulses of 31 ns had lower ED50 (estimated dose for a 50% probability of laser-induced damage) thresholds of 6.1 J cm(-2) for a 5-mm-diam, top-hat spatial profile laser pulse.

Distributed-feedback Terahertz Quantum-cascade Lasers with Laterally Corrugated Metal Waveguides

NASA Technical Reports Server (NTRS)

Williams, Benjamin S.; Kumar, Sushil; Hu, Qing; Reno, John L.

2005-01-01

We report the demonstration of distributed-feedback terahertz quantum-cascade lasers based on a first-order grating fabricated via a lateral corrugation in a double-sided metal ridge waveguide. The phase of the facet reflection was precisely set by lithographically defined facets by dry etching. Single-mode emission was observed at low to moderate injection currents, although multimode emission was observed far beyond threshold owing to spatial hole burning. Finite-element simulations were used to calculate the modal and threshold characteristics for these devices, with results in good agreement with experiments.

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

NASA Astrophysics Data System (ADS)

Mack, M. P.; Abare, A. C.; Hansen, M.; Kozodoy, P.; Keller, S.; Mishra, U.; Coldren, L. A.; DenBaars, S. P.

1998-06-01

Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In 0.21Ga 0.79N (2.5 nm)/In 0.07Ga 0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm 2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6 h at room temperature.

1.55 um aluminum gallium indium arsenide strained MQW laser diodes

NASA Astrophysics Data System (ADS)

Yang, Chi

At the 1.55 mum eye-safe, telecommunications operating wavelength, semiconductor diode lasers must have low threshold currents and operate at high temperatures without thermoelectric coolers. Existing diode lasers in this wavelength range based on the GaInAsP/InP materials system are very sensitive to operating temperature. To obtain high temperature, high power 1.55 mum semiconductor diode lasers, the AlGaInAs/InP materials system with strained quantum well (QW) active regions was investigated with the goal of improving temperature performance. A set of lasers with active regions consisting of different numbers of QWs (2 to 4) and different QW strains (1.2% and 1.6%) were designed taking into account the quaternary alloy bandgap of AlGaInAs, the effect of strain on the bandgap, and the quantum size effects within the QW. The active region growth temperature was optimized using photoluminescence intensity. The wafers were first processed into broad-area lasers and measured under pulsed injection. The characteristic threshold current temperature, T0, for all AlGaInAs lasers was higher (60-70 K) than for GaInAsP lasers. No strong dependence of temperature parameters on strain was observed, while properties varied significantly with the number of QWs. With more QWs, both internal efficiency and T0 increases, but internal loss increases, reducing the characteristic temperature of the differential efficiency T1. The results show that uncooled laser operation at 1.55 mum is very promising with strained AlGaInAs QWs. Ridge waveguide devices demonstrated low threshold and high output power as well as good temperature performance under continuous wave operation. Devices with different ridge heights were fabricated from one wafer and their performance was compared. It was found that current spreading was significant in these devices and a simple current density-versus-applied voltage analysis was developed to determine the spreading factor. The analysis shows that the current spreading was not effectively limited until etching went below the doped cladding layer. A recombination coefficient analysis was performed to investigate the effect of strain on Auger recombination predicted by theory. An indirect method to infer both the nonradiative recombination coefficient and the Auger recombination coefficient was initially used. The measured values of the recombination coefficients were consistent with theoretical predictions and measurements based on other material systems. The Auger recombination was lower than expected, indicating that Auger recombination is reduced in these strained QWs. To understand the carrier dynamics, impedance measurements were carried out for the first time in AlGaInAs strained QW lasers. A small-signal, sub-threshold equivalent circuit model was derived from the laser rate equations to model the measured laser impedance. Several characteristic carrier lifetimes were obtained directly from these electrical impedance measurements. From the temperature dependence of the QW escape time, it was found that hole rather than electron leakage is dominant in the AlGaInAs system due to the relatively low valence band offset. This may explain why the improvement of T0 in AlGaInAs QW 1.55 mum active regions is limited.

High-resolution investigation of longitudinal modes of a GaN-based blue laser diode

NASA Astrophysics Data System (ADS)

Al-Basheer, Watheq; Aljalal, Abdulaziz; Gasmi, Khaled; Adigun, Taofeek O.

2017-05-01

Typical emission spectra of GaN-based blue laser diodes are known to have irregular shapes. Hence, well-resolved study of their spectra may help in understanding the origin of their spectral shapes irregularity. In this paper, the spectra of a commercial GaN-based blue laser diode are studied as a function of injection current and temperature using a spectrometer with highresolution of 0.003-nm over the spectral region 440 - 450 nm. The obtained laser spectra are used to track the longitudinal modes evolution as a function of operating currents and temperatures as well as to precisely map single mode operation. In addition, yielded laser spectra will be utilized to evaluate few parameters related to the laser diode, such as mode spacing, optical gain, slope efficiency and threshold current at certain temperature.

Self-localized structures in vertical-cavity surface-emitting lasers with external feedback.

PubMed

Paulau, P V; Gomila, D; Ackemann, T; Loiko, N A; Firth, W J

2008-07-01

In this paper, we analyze a model of broad area vertical-cavity surface-emitting lasers subjected to frequency-selective optical feedback. In particular, we analyze the spatio-temporal regimes arising above threshold and the existence and dynamical properties of cavity solitons. We build the bifurcation diagram of stationary self-localized states, finding that branches of cavity solitons emerge from the degenerate Hopf bifurcations marking the homogeneous solutions with maximal and minimal gain. These branches collide in a saddle-node bifurcation, defining a maximum pump current for soliton existence that lies below the threshold of the laser without feedback. The properties of these cavity solitons are in good agreement with those observed in recent experiments.

Strained-layer indium gallium arsenide-gallium arsenide- aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Osowski, Mark Louis

With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.

Threshold for electron self-injection in a nonlinear laser-plasma accelerator

NASA Astrophysics Data System (ADS)

Benedetti, Carlo; Schroeder, Carl; Esarey, Eric; Leemans, Wim

2012-10-01

The process of electron self-injection in the nonlinear bubble-wake generated by a short and intense laser pulse propagating in an uniform underdense plasma is investigated. A detailed analysis of particle orbit in the wakefield is performed by using reduced analytical models and numerical simulations carried out with the 2D cylindrical, envelope, ponderomotive, hybrid PIC/fluid code INF&RNO. In particular, we consider a wake generated by a frozen (non-evolving) laser driver traveling with a prescribed velocity, which then sets the properties of the wake, so the injection dynamics is decoupled from driver evolution but a realistic structure for the wakefield is retained. We investigate the dependence of the injection threshold on laser intensity, plasma temperature and wake velocity for a range of parameters of interest for current and future laser plasma accelerators. The phase-space properties of the injected particle bunch will also be discussed.

Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process

DTIC Science & Technology

1994-03-01

Epitaxial structure of vertical cavity surface - emitting laser ( VCSEL ...diameter (75 tum < d< 150 prm) vertical - cavity surface - emitting lasers fabricated from an epitaxial structure containing a single In0 .2Ga 8.,As quantum...development of vertical - cavity surface - emitting lasers ( VCSELs ) [1] has enabled III-V semiconductor technology to be applied to cer- tain optical

Impact of different cleaning processes on the laser damage threshold of antireflection coatings for Z-Backlighter optics at Sandia National Laboratories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Field, Ella; Bellum, John; Kletecka, Damon

We have examined how different cleaning processes affect the laser-induced damage threshold of antireflection coatings for large dimension, Z-Backlighter laser optics at Sandia National Laboratories. Laser damage thresholds were measured after the coatings were created, and again 4 months later to determine which cleaning processes were most effective. There is a nearly twofold increase in laser-induced damage threshold between the antireflection coatings that were cleaned and those that were not cleaned. Aging of the coatings after 4 months resulted in even higher laser-induced damage thresholds. Also, the laser-induced damage threshold results revealed that every antireflection coating had a high defectmore » density, despite the cleaning process used, which indicates that improvements to either the cleaning or deposition processes should provide even higher laser-induced damage thresholds.« less

Impact of different cleaning processes on the laser damage threshold of antireflection coatings for Z-Backlighter optics at Sandia National Laboratories

DOE PAGES

Field, Ella; Bellum, John; Kletecka, Damon

2014-11-06

We have examined how different cleaning processes affect the laser-induced damage threshold of antireflection coatings for large dimension, Z-Backlighter laser optics at Sandia National Laboratories. Laser damage thresholds were measured after the coatings were created, and again 4 months later to determine which cleaning processes were most effective. There is a nearly twofold increase in laser-induced damage threshold between the antireflection coatings that were cleaned and those that were not cleaned. Aging of the coatings after 4 months resulted in even higher laser-induced damage thresholds. Also, the laser-induced damage threshold results revealed that every antireflection coating had a high defectmore » density, despite the cleaning process used, which indicates that improvements to either the cleaning or deposition processes should provide even higher laser-induced damage thresholds.« less

Phase-locked, high power, mid-infrared quantum cascade laser arrays

NASA Astrophysics Data System (ADS)

Zhou, W.; Slivken, S.; Razeghi, M.

2018-04-01

We demonstrate phase-locked, high power quantum cascade laser arrays, which are combined using a monolithic, tree array multimode interferometer, with emission wavelengths around 4.8 μm. A maximum output power of 15 W was achieved from an eight-element laser array, which has only a slightly higher threshold current density and a similar slope efficiency compared to a Fabry-Perot laser of the same length. Calculated multimode interferometer splitting loss is on the order of 0.27 dB for the in-phase supermode. In-phase supermode operation with nearly ideal behavior is demonstrated over the working current range of the array.

Link between mechanical strength and laser damage threshold for antireflective coating made by sol-gel

NASA Astrophysics Data System (ADS)

Avice, J.; Piombini, H.; Boscher, C.; Belleville, P.; Vaudel, G.; Brotons, G.; Ruello, P.; Gusev, V.

2017-11-01

The MegaJoule Laser (LMJ) for inertial confinement fusion experiments is currently in operation at CEA-CESTA in France. All the lenses are coated by an antireflective (AR) layer to optimize the light power transmission. This AR layer is manufactured by sol-gel process, a soft chemical process, associated with a liquid phase coating technique to realize thin film of metal oxide. These optical components are hardened into ammoniac vapors in order to mechanically reinforce the AR coating and to make them more handling. This hardening induces a thickness reduction of the layer so an increase of the stiffness and sometimes a crazing of the layer. As these optical components undergo a high-power laser beam, so, it is important to verify if the AR properties (optical and mechanical) influence the value of the threshold laser damage. A series of coated samples have been manufactured having variable elastic moduli to discuss this point. In that purpose, a homemade Laser Induced Damage Threshold (LIDT) setup has been developed to test the layers under laser flux. We describe the used methods and different results are given. Preliminary results obtained on several coated samples with variable elastic moduli are presented. We show that whatever are the elastic stiffness of the AR coating, an overall decrease of the threshold appears with no noticeable effect of the mechanical properties of the AR coatings. Some possible explanations are given.

Continuous-wave operation of InAsSb/InP quantum - dot lasers near 2 (mu)m at room temperature

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Uhl, David; Keo, Sam

2004-01-01

InAsSb quantum-dot lasers near 2 pm were demonstrated in cw operation at room temperature with a threshold current density of below 1 kA/cm, output power of 3 mW/facet and a differential quantum efficiency of 13%.

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

NASA Astrophysics Data System (ADS)

Su, Y. K.; Chen, W. C.; Wan, C. T.; Yu, H. C.; Chuang, R. W.; Tsai, M. C.; Cheng, K. Y.; Hu, C.; Tsau, Seth

2008-07-01

In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In 0.39Ga 0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm 2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm 2. The fitted characteristic temperature ( T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In 0.42Ga 0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response

NASA Astrophysics Data System (ADS)

Iorsh, Ivan; Glauser, Marlene; Rossbach, Georg; Levrat, Jacques; Cobet, Munise; Butté, Raphaël; Grandjean, Nicolas; Kaliteevski, Mikhail A.; Abram, Richard A.; Kavokin, Alexey V.

2012-09-01

The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set of semiclassical Boltzmann equations for the exciton polaritons that are coupled to the rate equation describing the electron-hole plasma population. Two experimentally relevant pumping geometries are considered, namely the direct injection of electrons and holes into the strongly coupled microcavity region and intracavity optical pumping via an embedded light-emitting diode. The theoretical framework allows the determination of the minimum threshold current density Jthr,min as a function of lattice temperature and exciton-cavity photon detuning for the two pumping schemes. A Jthr,min value of 5 and 6 A cm-2 is derived for the direct injection scheme and for the intracavity optical pumping one, respectively, at room temperature at the optimum detuning. Then an approximate quasianalytical model is introduced to derive solutions for both the steady-state and high-speed current modulation. This analysis makes it possible to show that the exciton population, which acts as a reservoir for the stimulated relaxation process, gets clamped once the condensation threshold is crossed, a behavior analogous to what happens in conventional laser diodes with the carrier density above threshold. Finally, the modulation transfer function is calculated for both pumping geometries and the corresponding cutoff frequency is determined.

Vertically Emitting Indium Phosphide Nanowire Lasers.

PubMed

Xu, Wei-Zong; Ren, Fang-Fang; Jevtics, Dimitars; Hurtado, Antonio; Li, Li; Gao, Qian; Ye, Jiandong; Wang, Fan; Guilhabert, Benoit; Fu, Lan; Lu, Hai; Zhang, Rong; Tan, Hark Hoe; Dawson, Martin D; Jagadish, Chennupati

2018-06-13

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.

Monolithic all-fiber repetition-rate tunable gain-switched single-frequency Yb-doped fiber laser.

PubMed

Hou, Yubin; Zhang, Qian; Qi, Shuxian; Feng, Xian; Wang, Pu

2016-12-12

We report a monolithic gain-switched single-frequency Yb-doped fiber laser with widely tunable repetition rate. The single-frequency laser operation is realized by using an Yb-doped distributed Bragg reflection (DBR) fiber cavity, which is pumped by a commercial-available laser diode (LD) at 974 nm. The LD is electronically modulated by the driving current and the diode output contains both continuous wave (CW) and pulsed components. The CW component is set just below the threshold of the single-frequency fiber laser for reducing the requirement of the pump pulse energy. Above the threshold, the gain-switched oscillation is trigged by the pulsed component of the diode. Single-frequency pulsed laser output is achieved at 1.063 μm with a pulse duration of ~150 ns and a linewidth of 14 MHz. The repetition rate of the laser output can be tuned between 10 kHz and 400 kHz by tuning the electronic trigger signal. This kind of lasers shows potential for the applications in the area of coherent LIDAR etc.

First-principles simulation for strong and ultra-short laser pulse propagation in dielectrics

NASA Astrophysics Data System (ADS)

Yabana, K.

2016-05-01

We develop a computational approach for interaction between strong laser pulse and dielectrics based on time-dependent density functional theory (TDDFT). In this approach, a key ingredient is a solver to simulate electron dynamics in a unit cell of solids under a time-varying electric field that is a time-dependent extension of the static band calculation. This calculation can be regarded as a constitutive relation, providing macroscopic electric current for a given electric field applied to the medium. Combining the solver with Maxwell equations for electromagnetic fields of the laser pulse, we describe propagation of laser pulses in dielectrics without any empirical parameters. An important output from the coupled Maxwell+TDDFT simulation is the energy transfer from the laser pulse to electrons in the medium. We have found an abrupt increase of the energy transfer at certain laser intensity close to damage threshold. We also estimate damage threshold by comparing the transferred energy with melting and cohesive energies. It shows reasonable agreement with measurements.

Estimation of risks by chemicals produced during laser pyrolysis of tissues

NASA Astrophysics Data System (ADS)

Weber, Lothar W.; Spleiss, Martin

1995-01-01

Use of laser systems in minimal invasive surgery results in formation of laser aerosol with volatile organic compounds of possible health risk. By use of currently identified chemical substances an overview on possibly associated risks to human health is given. The class of the different identified alkylnitriles seem to be a laser specific toxicological problem. Other groups of chemicals belong to the Maillard reaction type, the fatty acid pyrolysis type, or even the thermally activated chemolysis. In relation to the available different threshold limit values the possible exposure ranges of identified substances are discussed. A rough estimation results in an exposure range of less than 1/100 for almost all substances with given human threshold limit values without regard of possible interactions. For most identified alkylnitriles, alkenes, and heterocycles no threshold limit values are given for lack of, until now, practical purposes. Pyrolysis of anaesthetized organs with isoflurane gave no hints for additional pyrolysis products by fragment interactions with resulting VOCs. Measurements of pyrolysis gases resulted in detection of small amounts of NO additionally with NO2 formation at plasma status.

The effect of laser ablation parameters on optical limiting properties of silver nanoparticles

NASA Astrophysics Data System (ADS)

Gursoy, Irmak; Yaglioglu, Halime Gul

2017-09-01

This paper presents the effect of laser ablation parameters on optical limiting properties of silver nanoparticles. The current applications of lasers such as range finding, guidance, detection, illumination and designation have increased the potential of damaging optical imaging systems or eyes temporary or permanently. The applications of lasers introduce risks for sensors or eyes, when laser power is higher than damage threshold of the detection system. There are some ways to protect these systems such as neutral density (nd) filters, shutters, etc. However, these limiters reduce the total amount of light that gets into the system. Also, response time of these limiters may not be fast enough to prevent damage and cause precipitation in performance due to deprivation of transmission or contrast. Therefore, optical limiting filters are needed that is transparent for low laser intensities and limit or block the high laser intensities. Metal nanoparticles are good candidates for such optical limiting filters for ns pulsed lasers or CW lasers due to their high damage thresholds. In this study we investigated the optical limiting performances of silver nanoparticles produced by laser ablation technique. A high purity silver target immersed in pure water was ablated with a Nd:YAG nanosecond laser at 532 nm. The effect of altering laser power and ablation time on laser ablation efficiency of nanoparticles was investigated experimentally and optimum values were specified. Open aperture Zscan experiment was used to investigate the effect of laser ablation parameters on the optical limiting performances of silver nanoparticles in pure water. It was found that longer ablation time decreases the optical limiting threshold. These results are useful for silver nanoparticles solutions to obtain high performance optical limiters.

Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu. M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

Low threshold current density (<400 A/cm2) injection lasing in (AlxGa1-x)0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm) is obtained. The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at preventing escape of the injected nonequilibrium electrons from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15o for (611)A substrates. The lasing at 569 nm is realized at 85 K. In the orange-red laser diode structure low threshold current density (200 A/cm2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrate room temperature lasing at 628 nm at 2 kA/cm2 and a total power above 3W. The red laser diodes grown on (211)A substrates demonstrate vertically multimode lasing far field pattern indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However the temperature stability of the threshold current and the wavelength stability are significantly higher for (211)A-grown structures in agreement with the conduction band modeling data.

Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Y.J.; Dziura, T.G.; Wang, S.C.

1990-05-07

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

NASA Astrophysics Data System (ADS)

Yang, Ying Jay; Dziura, Thaddeus G.; Wang, S. C.; Hsin, Wei; Wang, Shyh

1990-05-01

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2-0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2-4 μm diameter active region formed by chemical selective etching, and sandwiched between two Al0.05Ga0.95 As/ Al0.53Ga0.47 As distributed Bragg reflectors of very high reflectivity (98-99%) grown by metalorganic chemical vapor deposition.

Modulation doping of quantum dot laser active area and its impact on lasing performance

NASA Astrophysics Data System (ADS)

Konoplev, S. S.; Savelyev, A. V.; Korenev, V. V.; Maximov, M. V.; Zhukov, A. E.

2015-11-01

We present a theoretical study of modulation doping of active region in the quantum dot (QD) laser and corresponding issues of QD charge neutrality violation, a band diagram of the laser and charge carriers distribution in the structure. Modulation doping is discussed as a possible technique to control laser output characteristics. It was shown that modulation doping leads to an increase of threshold current of lasing through excited QD optical transition together with power emission from QD ground state.

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nekorkin, S. M.; Zvonkov, B. N.; Baidus, N. V.

2017-01-15

The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.

Emission wavelength of AlGaAs-GaAs multiple quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Hulyer, P.J.

1986-04-28

We have recorded spontaneous emission spectra from multiple quantum well lasers grown by molecular beam epitaxy with 25-A-wide GaAs wells by opening a window in the top contact stripe. These spectra have a low-energy tail and consequently the gain spectra derived from them show that laser emission occurs at a lower photon energy than the lowest energy confined particle transition. The observed laser wavelength and threshold current are consistent with the position of the peak in the gain spectrum.

Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers.

PubMed

Abdollahinia, A; Banyoudeh, S; Rippien, A; Schnabel, F; Eyal, O; Cestier, I; Kalifa, I; Mentovich, E; Eisenstein, G; Reithmaier, J P

2018-03-05

Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit improved temperature stability and record-high modulation characteristics. Detailed results are shown for the temperature dependence of static properties including threshold current, voltage-current characteristics, external differential efficiency and emission wavelength. Similarly, small and large signal modulations were found to have only minor dependences on temperature. Moreover, we show the impact of the active region design and the cavity length on the temperature stability. Measurements were performed in pulsed and continuous wave operation. High characteristic temperatures for the threshold current were obtained with T 0 values of 144 K (15 - 60 °C), 101 K (60 - 110 °C) and 70 K up to 180 °C for a 900-µm-long RWG laser comprising 8 QD layers. The slope efficiency in these lasers is nearly independent of temperature showing a T 1 value of more than 900 K up to 110 °C. Due to the high modal gain, lasers with a cavity length of 340 µm reached new record modulation bandwidths of 17.5 GHz at 20 °C and 9 GHz at 80 °C, respectively. These lasers were modulated at 26 GBit/s in the non-return to zero format at 80 °C and at 25 GBaud using a four-level pulse amplitude format at 21 °C.

Matrix addressable vertical cavity surface emitting laser array

NASA Astrophysics Data System (ADS)

Orenstein, M.; von Lehmen, A. C.; Chang-Hasnain, C.; Stoffel, N. G.; Harbison, J. P.

1991-02-01

The design, fabrication and characterization of 1024-element matrix-addressable vertical-cavity surface-emitting laser (VCSEL) arrays are described. A strained InGaAs quantum-well VCSEL structure was grown by MBE, and an array of 32 x 32 lasers was defined using a proton implantation process. A matrix addressing architecture was employed, which enables the individual addressing of each of the 1024 lasers using only 64 electrical contacts. All the lasers in the array, measured after the laser definition step, were operating with fairly homogeneous characteristics; threshold current of 6.8 mA and output quantum differential efficiency of about 8 percent.

Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Foxon, C.T.

1988-07-25

We have used short-period all-binary (AlAs)(GaAs) superlattices with layers as thin as three monolayers to synthesize the barrier and cladding regions of GaAs quantum well lasers grown by molecular beam epitaxy. By studying the threshold current of single- and double-well devices as a function of cavity length and temperature, we conclude that the optical scattering losses are very low, that the gain-current characteristics are similar to alloy barrier devices, and that there is evidence for current leakage by recombination in the barriers.

Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers

NASA Astrophysics Data System (ADS)

Bou Sanayeh, Marwan

2017-05-01

The increasing importance of extracting high optical power out of semiconductor lasers motivated several studies in catastrophic optical damage (COD) level improvement. In this study, the influence of the resonator length in high-power broad-area (BA) AlGaInP lasers on COD is presented. For the analyses, several 638 nm AlGaInP 60 μm BA lasers from the same wafer were used. Resonator lengths of 900, 1200, 1500, and 1800 μm were compared. In order to independently examine the effect of the resonator length on the maximum power reached by the lasers before COD (PCOD), the lasers used are uncoated and unmounted, and PCOD under pulsed mode was determined. It was found that higher output powers and eventually higher PCOD can be achieved using longer resonators; however, it was also found that this is mainly useful when working at high output powers far away from the laser threshold, since the threshold current and slope efficiency worsen when the resonator length increases.

The effect of dynamical Bloch oscillations on optical-field-induced current in a wide-gap dielectric

NASA Astrophysics Data System (ADS)

Földi, P.; Benedict, M. G.; Yakovlev, V. S.

2013-06-01

We consider the motion of charge carriers in a bulk wide-gap dielectric interacting with a few-cycle laser pulse. A semiclassical model based on Bloch equations is applied to describe the emerging time-dependent macroscopic currents for laser intensities close to the damage threshold. At such laser intensities, electrons can reach edges of the first Brillouin zone even for electron-phonon scattering rates as high as those known for SiO2. We find that, whenever this happens, Bragg-like reflections of electron waves, also known as Bloch oscillations, affect the dependence of the charge displaced by the laser pulse on its carrier-envelope phase.

Gamma irradiation of Fabry–Perot interband cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myers, Tanya L.; Cannon, Bret D.; Brauer, Carolyn S.

Two Fabry-Perot interband cascade lasers (ICLs) were exposed to Cobalt-60 gamma rays for a dosage of 500 krad(Si) each, which is higher than is typically encountered in space applications. The ICLs do not show any significant changes in threshold current or slope efficiency, suggesting the suitability of ICLs for use in radiation environments.

Red-light-emitting laser diodes operating CW at room temperature

NASA Technical Reports Server (NTRS)

Kressel, H.; Hawrylo, F. Z.

1976-01-01

Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200-8000-A spectral range. These devices operate continuously with simple oxide-isolated stripe contacts to 7400 A, which extends CW operation into the visible (red) portion of the spectrum.

Porcine skin damage thresholds for pulsed nanosecond-scale laser exposure at 1064-nm

NASA Astrophysics Data System (ADS)

DeLisi, Michael P.; Peterson, Amanda M.; Noojin, Gary D.; Shingledecker, Aurora D.; Tijerina, Amanda J.; Boretsky, Adam R.; Schmidt, Morgan S.; Kumru, Semih S.; Thomas, Robert J.

2018-02-01

Pulsed high-energy lasers operating in the near-infrared (NIR) band are increasingly being used in medical, industrial, and military applications, but there are little available experimental data to characterize their hazardous effects on skin tissue. The current American National Standard for the Safe Use of Lasers (ANSI Z136.1-2014) defines the maximum permissible exposure (MPE) on the skin as either a single-pulse or total exposure time limit. This study determined the minimum visible lesion (MVL) damage thresholds in Yucatan miniature pig skin for the single-pulse case and several multiple-pulse cases over a wide range of pulse repetition frequencies (PRFs) (10, 125, 2,000, and 10,000 Hz) utilizing nanosecond-scale pulses (10 or 60 ns). The thresholds are expressed in terms of the median effective dose (ED50) based on varying individual pulse energy with other laser parameters held constant. The results confirm a decrease in MVL threshold as PRF increases for exposures with a constant number of pulses, while also noting a PRF-dependent change in the threshold as a function of the number of pulses. Furthermore, this study highlights a change in damage mechanism to the skin from melanin-mediated photomechanical events at high irradiance levels and few numbers of pulses to bulk tissue photothermal additivity at lower irradiance levels and greater numbers of pulses. The observed trends exceeded the existing exposure limits by an average factor of 9.1 in the photothermally-damaged cases and 3.6 in the photomechanicallydamaged cases.

Carbon dioxide laser polishing of fused silica surfaces for increased laser-damage resistance at 1064 nm.

PubMed

Temple, P A; Lowdermilk, W H; Milam, D

1982-09-15

Mechanically polished fused silica surfaces were heated with continuous-wave CO(2) laser radiation. Laser-damage thresholds of the surfaces were measured with 1064-nm 9-nsec pulses focused to small spots and with large-spot, 1064-nm, 1-nsec irradiation. A sharp transition from laser-damage-prone to highly laser-damage-resistant took place over a small range in CO(2) laser power. The transition to high damage resistance occurred at a silica surface temperature where material softening began to take place as evidenced by the onset of residual strain in the CO(2) laser-processed part. The small-spot damage measurements show that some CO(2) laser-treated surfaces have a local damage threshold as high as the bulk damage threshold of SiO(2). On some CO(2) laser-treated surfaces, large-spot damage thresholds were increased by a factor of 3-4 over thresholds of the original mechanically polished surface. These treated parts show no obvious change in surface appearance as seen in bright-field, Nomarski, or total internal reflection microscopy. They also show little change in transmissive figure. Further, antireflection films deposited on CO(2) laser-treated surfaces have thresholds greater than the thresholds of antireflection films on mechanically polished surfaces.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Qualification and Selection of Flight Diode Lasers for Space Applications

NASA Technical Reports Server (NTRS)

Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

2010-01-01

The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode traceablity.

Light intensity-voltage correlations and leakage-current excess noise in a single-mode semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurin, I.; Bramati, A.; Giacobino, E.

2005-09-15

Semiconductor lasers are particularly well suited for the implementation of pump-noise suppression, yielding a reduction of the intensity noise in the laser. In this simple picture, the maximal amount of squeezing is equal to the quantum efficiency. However, experimental results on intensity noise reduction by pump-noise suppression are usually above this limit. This discrepancy suggests that additional noise sources must be involved. Here we successful y interpret the full noise behavior of a single-mode laser diode far above threshold by considering two excess noise sources: the leakage current fluctuations across the laser and the Petermann excess noise. We have estimatedmore » the contribution of each noise source using the results of the correlations between the laser output intensity noise and the voltage fluctuations across the laser diode (light-voltage correlations) and obtained good agreement between our theory and experimental results.« less

Bibliography of Soviet Laser Developments, Number 67, September-October 1983.

DTIC Science & Technology

1984-12-05

5 g. Pb(l-x)Sn(x)Te .................. 5 iv V.--",7 4. Glass a. Mdscellaneous.................... 6- c., Er...the threshold current in injection lasers based on Pbl-xSnxTe semiconductors. FTPPA, no. 9v 1983, 1631-1634. 4. Glass a. Miscellaneous b. Nd 45...Shcherbakov, A.A.; Mak, A.A.; Sklizkov, G.V. (FIAN). Limit efficiency of neodymium glass lasers. KRSFA, no. 9, 1983, 8-12. c . Er 46. Lunter, S.G.; Murzin

LPI Thresholds in Longer Scale Length Plasmas Driven by the Nike Laser*

NASA Astrophysics Data System (ADS)

Weaver, J.; Oh, J.; Phillips, L.; Afeyan, B.; Seely, J.; Kehne, D.; Brown, C.; Obenschain, S.; Serlin, V.; Schmitt, A. J.; Feldman, U.; Holland, G.; Lehmberg, R. H.; McLean, E.; Manka, C.

2010-11-01

The Krypton-Fluoride (KrF) laser is an attractive driver for inertial confinement fusion due to its short wavelength (248nm), large bandwidth (1-3 THz), and beam smoothing by induced spatial incoherence. Experiments with the Nike KrF laser have demonstrated intensity thresholds for laser plasma instabilities (LPI) higher than reported for other high power lasers operating at longer wavelengths (>=351 nm). The previous Nike experiments used short pulses (350 ps FWHM) and small spots (<260 μm FWHM) that created short density scale length plasmas (Ln˜50-70 μm) from planar CH targets and demonstrated the onset of two-plasmon decay (2φp) at laser intensities ˜2x10^15 W/cm^2. This talk will present an overview of the current campaign that uses longer pulses (0.5-4.0 ns) to achieve greater density scale lengths (Ln˜100-200 μm). X-rays, emission near ^1/2φo and ^3/2φo harmonics, and reflected laser light have been monitored for onset of 2φp. The longer density scale lengths will allow better comparison to results from other laser facilities. *Work supported by DoE/NNSA and ONR.

High-laser-damage-threshold HfO2/SiO2 mirrors manufactured by sputtering process

NASA Astrophysics Data System (ADS)

Fornier, Anne; Bernardino, D.; Lam, Odile; Neauport, Jerome; Dufour, Francois; Schmitt, Bernard R.; Mackowski, Jean-Marie

1999-07-01

A major preoccupation for the design of the LMJ laser is the mirrors laser damage threshold. SAGEM SA, in collaboration with the CEA, has conducted a study in order to improve the laser induced damage threshold under operational conditions.

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

1995-01-01

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers

DTIC Science & Technology

2016-03-01

resistance 20 mΩ Ith Threshold current 350 mA Using this partial Taylor expansion in (32), the solution for the doping magnitude is C ≈ √ (2/L) I qAV0...2014. [3] M. Kanskar, T. Earles , T. Goodnough, E. Stiers, D. Botez, and L. J. Mawst, “High power conversion efficiency Al-free diode lasers for pumping

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

We report on low threshold current density (<400 A cm-2) injection lasing in (Al x Ga1-x )0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15° for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm-2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ˜2 kA cm-2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211)A-grown structures.

High-performance 1.3-μm laser diode by LP-MOVPE

NASA Astrophysics Data System (ADS)

Li, TongNing; Ji, Jin-yan; Yan, Xin-min; Liu, Tao; Ning, Zhou; Liu, Jiang; Liu, Zi-li; Huang, Ge-fan

1996-09-01

The progress in 1.3 micrometers wavelength InGaAsP/InP lasers for optic fiber communication and subscriber loop applications is reviewed. By using LP-MOVPE/LPE epitaxy techniques, the performance of commercial optical devices is considerably improved. The bandwidth of the 1.3 micrometers uncooled MQW-LD module could be high to 1.6GHz, threshold current Ith < 15mA, maximum fiber output power Pf >= 20mW while uniformity, reproducible, high yield are achieved. Further by growing active layer with compressive strained structure the lowest threshold current Ith equals 3.8mA was achieved with high reflection coating and the temperature performance of the SL-MQW-LD has been greatly improved, the change of slop efficiency at 25 degrees C and 85 degrees C is less than 1 dB. Using the holographic technique a high power 1.31 micrometers InGaAsP/InP multiquantum well distributed feedback laser has also been developed. The fiber output power of butterfly packaged module with optic isolator Pf > 10mW, threshold current Ith < 18mA, slop efficiency Es > 22 percent and side mode suppression ratio SMSR > 40dB. The composite triple beat CTB < -66dBc and the composite second order CSO < -56dBc by test frequencies equals 55.25 to approximately 289.25MHz with 40 NCTA channels, the carrier to noise ration CNR > 50 dB and the relative intensity noise RIN < -160dB/Hz.

Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy.

PubMed

Fujita, Kazuue; Yamanishi, Masamichi; Furuta, Shinichi; Tanaka, Kazunori; Edamura, Tadataka; Kubis, Tillmann; Klimeck, Gerhard

2012-08-27

Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum operating temperature of Tmax ~100 K. The observed roll-over of output intensities in current ranges below maximum currents and limitation of Tmax are discussed with a model for electron-gas heating in injectors. Possible ways toward elevation of Tmax are suggested.

Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Karachinskii, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Blokhin, S. A.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Voropaev, K. O.; Ionov, A. S.; Agustin, M.; Ledentsov, N. N.; Egorov, A. Yu.

2018-01-01

The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In0.74Ga0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40-45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

Corneal thermal damage threshold dependence on the exposure duration for near-infrared laser radiation at 1319 nm

NASA Astrophysics Data System (ADS)

Wang, Jiarui; Jiao, Luguang; Chen, Hongxia; Yang, Zaifu; Hu, Xiangjun

2016-01-01

The corneal damage effects induced by 1319-nm transitional near-infrared laser have been investigated for years. However, the damage threshold dependence on exposure duration has not been revealed. The in vivo corneal damage thresholds (ED50s) were determined in New Zealand rabbits for 1319-nm laser radiation for exposure durations from 75 ms to 10 s. An additional corneal ED50 was determined at 1338 nm for a 5-ms exposure. The incident corneal irradiance diameter was fixed at 2 mm for all exposure conditions to avoid the influence of spot size on threshold. The ED50s given in terms of the corneal radiant exposure for exposure durations of 5 ms, 75 ms, 0.35 s, 2 s, and 10 s were 39.4, 51.5, 87.2, 156.3, and 311.1 J/cm2, respectively. The 39.4 J/cm2 was derived from the ED50 for 1338 nm (27.0 J/cm2). The ED50s for exposure durations of 75 ms to 10 s were correlated by a power law equation, ED50=128.9t0.36 in J/cm2, where t was the input in the unit of second, with correlation coefficient (R) of 0.997. Enough safe margins existed between the ED50s and the maximum permitted exposures from current laser safety standard.

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

PubMed

Palit, Sabarni; Kirch, Jeremy; Huang, Mengyuan; Mawst, Luke; Jokerst, Nan Marie

2010-10-15

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers

NASA Astrophysics Data System (ADS)

Wu, C. H.; Zory, P. S.; Emanuel, M. A.

1994-12-01

Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated. Due to reduced contact reflectivity, the Ni contact lasers have significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 nm are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths. The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory.

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

1995-12-05

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

Variability of argon laser-induced sensory and pain thresholds on human oral mucosa and skin.

PubMed Central

Svensson, P.; Bjerring, P.; Arendt-Nielsen, L.; Kaaber, S.

1991-01-01

The variability of laser-induced pain perception on human oral mucosa and hairy skin was investigated in order to establish a new method for evaluation of pain in the orofacial region. A high-energy argon laser was used for experimental pain stimulation, and sensory and pain thresholds were determined. The intra-individual coefficients of variation for oral thresholds were comparable to cutaneous thresholds. However, inter-individual variation was smaller for oral thresholds, which could be due to larger variation in cutaneous optical properties. The short-term and 24-hr changes in thresholds on both surfaces were less than 9%. The results indicate that habituation to laser thresholds may account for part of the intra-individual variation observed. However, the subjective ratings of the intensity of the laser stimuli were constant. Thus, oral thresholds may, like cutaneous thresholds, be used for assessment and quantification of analgesic efficacies and to investigate various pain conditions. PMID:1814248

Electrically controllable liquid crystal random lasers below the Fréedericksz transition threshold.

PubMed

Lee, Chia-Rong; Lin, Jia-De; Huang, Bo-Yuang; Lin, Shih-Hung; Mo, Ting-Shan; Huang, Shuan-Yu; Kuo, Chie-Tong; Yeh, Hui-Chen

2011-01-31

This investigation elucidates for the first time electrically controllable random lasers below the threshold voltage in dye-doped liquid crystal (DDLC) cells with and without adding an azo-dye. Experimental results show that the lasing intensities and the energy thresholds of the random lasers can be decreased and increased, respectively, by increasing the applied voltage below the Fréedericksz transition threshold. The below-threshold-electric-controllability of the random lasers is attributable to the effective decrease of the spatial fluctuation of the orientational order and thus of the dielectric tensor of LCs by increasing the electric-field-aligned order of LCs below the threshold, thereby increasing the diffusion constant and decreasing the scattering strength of the fluorescence photons in their recurrent multiple scattering. This can result in the decrease in the lasing intensity of the random lasers and the increase in their energy thresholds. Furthermore, the addition of an azo-dye in DDLC cell can induce the range of the working voltage below the threshold for the control of the random laser to reduce.

Effect of GaAs Laser at 904 nm in the Pain Threshold in Tibia and Tolerance in Deltoid Evaluated by Pressure Algometry

NASA Astrophysics Data System (ADS)

Soares, Luiz G. P.; Sato, Sidney K.; Silveira, Landulfo; Aimbire, Flávio; Moreira, Leonardo M.; Pinheiro, Antônio L. B.

2011-08-01

The use of LLLT in pain relief is a controversial issue in Physiotherapy, with the efficacy of LLLT associated to pain relief still requiring significant study. Objective. This work focuses on the evaluation of the effect of low power GaAs laser at 904 nm in pressure pain threshold and tolerance in tibia and deltoid muscle, respectively. A total of 17 subjects were divided in two groups: active and sham laser. Measurements were taken before and after laser irradiation in healthy individuals using a pressure algometry, first verifying the viability of algometry to evaluate the pain threshold and tolerance inter individuals and comparing the differences of right and left sides in the same patients, and finally evaluating the pain threshold and tolerance before and after a single laser application. Laser energy density was of 4.0 J/cm2 with power density of 137 mW/cm2. Comparing algometry values of active laser group and the sham group, the pain tolerance in the deltoid muscle did not change among groups after laser irradiation, while it was also encountered a statistically significant difference in the pain threshold in tibia when comparing the laser active and sham laser (p<0.05). It was found that the active laser was effective in maintaining the pain threshold in tibia. The effective laser action in raising the pain threshold in tibia upon healthy individuals can suggest that the laser could be applied not only as curative but also with preventive purpose.

Microdisk Injection Lasers for the 1.27-μm Spectral Range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryzhanovskaya, N. V.; Maximov, M. V.; Blokhin, S. A.

2016-03-15

Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 μm at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 × 10–3 °C cm{sup 2}/W.

High-speed directly modulated widely tunable two-section InGaAlAs DBR lasers.

PubMed

Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Zhu, Hongliang; Wang, Wei

2017-02-06

We report widely tunable two-section distributed Bragg reflector (DBR) lasers, which have InGaAlAs multiple quantum wells (MQWs) as the gain material. By butt-jointing InGaAsP, which has a photoluminescence wavelength of 1.4 μm as the material of the DBR section, a wavelength tuning range of 12 nm can be obtained by current injection into the DBR section. The direct modulation bandwidth of the lasers is greater than 10 GHz over the entire wavelength tuning range up to 40°C. Compared with InGaAsP DBR lasers having the same structure, the InGaAlAs lasers have smaller variations in both the threshold current and slope efficiency with the temperature because of the better electron confinement in the InGaAlAs MQWs. Moreover, the DBR-current-induced decreases in the modulation bandwidth and side mode suppression ratio (SMSR) of the optical spectra are notably smaller for the InGaAlAs lasers than for the InGaAsP lasers.

Multiple wavelength tunable surface-emitting laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie J.; Harbison, J. P.; Zah, Chung-En; Maeda, M. W.; Florez, L. T.; Stoffel, N. G.; Lee, Tien-Pei

1991-06-01

Techniques to achieve wavelength multiplexing and tuning capabilities in vertical-cavity surface-emitting lasers (VCSELs) are described, and experimental results are given. The authors obtained 140 unique, uniformly separated, single-mode wavelength emissions from a 7 x 20 VCSEL array. Large total wavelength span (about 430 A) and small wavelength separation (about 3 A) are obtained simultaneously with uncompromised laser performance. All 140 lasers have nearly the same threshold currents, voltages, and resistances. Wavelength tuning is obtained by using a three-mirror coupled-cavity configuration. The three-mirror laser is a two-terminal device and requires only one top contact. Discrete tuning with a range as large as 61 A is achieved with a small change in drive current of only 10.5 mA. The VCSEL output power variation is within 5 dB throughout the entire tuning range.

Stability and Tolerance to Optical Feedback of Quantum Dot Lasers

DTIC Science & Technology

2012-01-01

Libre de Bruxelles Optique Nonlineaire Theorique Campus Plaine, C.P. 213 Bruxelles, Belgium 1050 EOARD GRANT 09-3068 Report Date...Universite Libre de Bruxelles Optique Nonlineaire Theorique Campus Plaine, C.P. 213 Bruxelles, Belgium 1050 8. PERFORMING ORGANIZATION...Universite Libre de Bruxelles as follows: Quantum dot (QD) lasers have attracted a lot of attention because of their low threshold currents, low line

Development of long wavelength semiconductor diode lasers near 28 microns for use in infrared heterodyne spectrometers

NASA Technical Reports Server (NTRS)

Linden, K. J.

1984-01-01

The development of tunable diode lasers operating in the 28 micrometers spectral region for use in infrared heterodyne spectrometers is reported. A process capable of yielding lasers emitting 500 micron W of multimode power, 112 micron W in a true single mode and true single mode operation at laser currents of up to 35% above threshold was developed. Results were obtained from narrow mesastripe (20 micrometer wide) short cavity (120 micrometer length) laser configurations. Six stripe geometry lasers, with a variety of cavity widths and lengths were delivered. The techniques to fabricate such devices was obtained and the long term reliability of such lasers by reproducible electrical and optical output characteristics fabrication from lasers are demonstrated.

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

NASA Astrophysics Data System (ADS)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Intensity fluctuations in bimodal micropillar lasers enhanced by quantum-dot gain competition

NASA Astrophysics Data System (ADS)

Leymann, H. A. M.; Hopfmann, C.; Albert, F.; Foerster, A.; Khanbekyan, M.; Schneider, C.; Höfling, S.; Forchel, A.; Kamp, M.; Wiersig, J.; Reitzenstein, S.

2013-05-01

We investigate correlations between orthogonally polarized cavity modes of a bimodal micropillar laser with a single layer of self-assembled quantum dots in the active region. While one emission mode of the microlaser demonstrates a characteristic S-shaped input-output curve, the output intensity of the second mode saturates and even decreases with increasing injection current above threshold. Measuring the photon autocorrelation function g(2)(τ) of the light emission confirms the onset of lasing in the first mode with g(2)(0) approaching unity above threshold. In contrast, strong photon bunching associated with superthermal values of g(2)(0) is detected for the other mode for currents above threshold. This behavior is attributed to gain competition of the two modes induced by the common gain material, which is confirmed by photon cross-correlation measurements revealing a clear anticorrelation between emission events of the two modes. The experimental studies are in qualitative agreement with theoretical studies based on a microscopic semiconductor theory, which we extend to the case of two modes interacting with the common gain medium. Moreover, we treat the problem by a phenomenological birth-death model extended to two interacting modes, which reveals that the photon probability distribution of each mode has a double-peak structure, indicating switching behavior of the modes for pump rates around threshold.

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Iliadis, Agisilaos A.; Christou, Aristos

2003-07-01

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Phase-locked array of quantum cascade lasers with an integrated Talbot cavity.

PubMed

Wang, Lei; Zhang, Jinchuan; Jia, Zhiwei; Zhao, Yue; Liu, Chuanwei; Liu, Yinghui; Zhai, Shenqiang; Ning, Zhuo; Xu, Xiangang; Liu, Fengqi

2016-12-26

We show a phase-locked array of three quantum cascade lasers with an integrated Talbot cavity at one side of the laser array. The coupling scheme is called diffraction coupling. By controlling the length of Talbot to be a quarter of Talbot distance (Z_t/4), in-phase mode operation can be selected. The in-phase operation shows great modal stability under different injection currents, from the threshold current to the full power current. The far-field radiation pattern of the in-phase operation contains three lobes, one central maximum lobe and two side lobes. The interval between adjacent lobes is about 10.5°. The output power is about 1.5 times that of a single-ridge laser. Further studies should be taken to achieve better beam performance and reduce optical losses brought by the integrated Talbot cavity.

Saturation of the junction voltage in GaN-based laser diodes

NASA Astrophysics Data System (ADS)

Feng, M. X.; Liu, J. P.; Zhang, S. M.; Liu, Z. S.; Jiang, D. S.; Li, Z. C.; Wang, F.; Li, D. Y.; Zhang, L. Q.; Wang, H.; Yang, H.

2013-05-01

Saturation of the junction voltage in GaN-based laser diodes (LDs) is studied. It is found that there is a bump above the lasing transition in the I(dV/dI)-I curve, instead of a dip as that for GaAs-based LDs. The bump in I(dV/dI)-I curve moves to higher currents along with the lasing threshold. A model considering ambipolar conduction and electron overflow into p-AlGaN cladding layer due to poor carrier confinement in active region is used to explain the anomaly. The characteristic temperature of GaN-based LD is obtained by fitting threshold currents determined from I(dV/dI)-I curves. Moreover, it is found that GaN-based LDs show characteristics with a nonlinear series resistance, which may be due to the electron overflow into p-AlGaN cladding layer and the enhanced activation of Mg acceptors.

Thermal annealing of lattice-matched InGaAs/InAlAs Quantum-Cascade Lasers

NASA Astrophysics Data System (ADS)

Mathonnière, Sylvain; Semtsiv, M. P.; Ted Masselink, W.

2017-11-01

We describe the evolution of optical power, threshold current, and emission wavelength of a lattice-matched InGaAs/InAlAs Quantum-Cascade Laser (QCL) emitting at 13 μm grown by gas-source molecular-beam epitaxy under thermal annealing. Pieces from the same 2-in wafer were annealed at 600 °C, 650 °C, or 700 °C for 1 h; one control piece remained unannealed. No change in threshold current and emission wavelength was observed. The slope efficiency and maximum emission power increase for the 600 °C anneal, but higher annealing temperatures resulted in degraded performance. This result stands in contrast with the observation that strain-compensated structures cannot withstand annealing temperature of 600 °C. Useful information for post-growth processing steps and the role of interface roughness in QCL performance are obtained.

The solid state detector technology for picosecond laser ranging

NASA Technical Reports Server (NTRS)

Prochazka, Ivan

1993-01-01

We developed an all solid state laser ranging detector technology, which makes the goal of millimeter accuracy achievable. Our design and construction philosophy is to combine the techniques of single photon ranging, ultrashort laser pulses, and fast fixed threshold discrimination while avoiding any analog signal processing within the laser ranging chain. The all solid state laser ranging detector package consists of the START detector and the STOP solid state photon counting module. Both the detectors are working in an optically triggered avalanche switching regime. The optical signal is triggering an avalanche current buildup which results in the generation of a uniform, fast risetime output pulse.

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

Nanosecond pulse lasers for retinal applications.

PubMed

Wood, John P M; Plunkett, Malcolm; Previn, Victor; Chidlow, Glyn; Casson, Robert J

2011-08-01

Thermal lasers are routinely used to treat certain retinal disorders although they cause collateral damage to photoreceptors. The current study evaluated a confined, non-conductive thermal, 3-nanosecond pulse laser in order to determine how to produce the greatest therapeutic range without causing collateral damage. Data were compared with that obtained from a standard thermal laser. Porcine ocular explants were used; apposed neuroretina was also in place for actual laser treatment. After treatment, the retina was removed and a calcein-AM assay was used to assess retinal pigmented epithelium (RPE) cell viability in the explants. Histological methods were also employed to examine lased transverse explant sections. Three nanoseconds pulse lasers with either speckle- or gaussian-beam profile were employed in the study. Comparisons were made with a 100 milliseconds continuous wave (CW) 532 nm laser. The therapeutic energy range ratio was defined as the minimum visible effect threshold (VET) versus the minimum detectable RPE kill threshold. The 3-nanosecond lasers produced markedly lower minimum RPE kill threshold levels than the CW laser (e.g., 36 mJ/cm(2) for speckle-beam and 89 mJ/cm(2) for gaussian-beam profile nanosecond lasers vs. 7,958 mJ/cm(2) for CW laser). VET values were also correspondingly lower for the nanosecond lasers (130 mJ/cm(2) for 3 nanoseconds speckle-beam and 219 mJ/cm(2) for gaussian-beam profile vs. 1,0346 mJ/cm(2) for CW laser). Thus, the therapeutic range ratios obtained with the nanosecond lasers were much more favorable than that obtained by the CW laser: 3.6:1 for the speckle-beam and 2.5:1 for the gaussian-beam profile 3-nanosecond lasers versus 1.3:1 for the CW laser. Nanosecond lasers, particularly with a speckle-beam profile, provide a much wider therapeutic range of energies over which RPE treatment can be performed, without damage to the apposed retina, as compared with conventional CW lasers. These results may have important implications for the treatment of retinal disease. Copyright © 2011 Wiley-Liss, Inc.

Ultralow-threshold Yb(3+):SiO(2) glass laser fabricated by the solgel process.

PubMed

Ostby, Eric P; Yang, Lan; Vahala, Kerry J

2007-09-15

A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q micro-toroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 microW absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. The effect of Yb(3+) concentration on laser threshold is experimentally quantified.

Semipolar III-nitride laser diodes with zinc oxide cladding.

PubMed

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

Oxide-apertured VCSEL with short period superlattice

NASA Astrophysics Data System (ADS)

Li, Lin; Zhong, Jingchang; Zhang, Yongming; Su, Wei; Zhao, Yingjie; Yan, Changling; Hao, Yongqin; Jiang, Xiaoguang

2004-12-01

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al_(0.9)Ga_(0.1)As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2 deg. off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 (Celsius degree) and the threshold current increased slowly with the increase of temperature.

Simulation and optimization of deep violet InGaN double quantum well laser

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Ghazai, A. J.; Rahmani, R.; Mahmodi, H.; Hassan, Z.

2012-03-01

The performance characteristics of a deep violet InGaN double quantum well laser diode (LD) such as threshold current ( Ith), external differential quantum efficiency (DQE) and output power have been investigated using the Integrated System Engineering Technical Computer Aided Design (ISE-TCAD) software. As well as its operating parameters such as internal quantum efficiency ( ηi), internal loss ( αi) and transparency threshold current density ( J0) have been studied. Since, we are interested to investigate the mentioned characteristics and parameters independent of well and barrier thickness, therefore to reach a desired output wavelength, the indium mole fraction of wells and barriers has been varied consequently. The indium mole fractions of well and barrier layers have been considered 0.08 and 0.0, respectively. Some important parameters such as Al mole fraction of the electronic blocking layer (EBL) and cavity length which affect performance characteristics were also investigated. The optimum values of the Al mole fraction and cavity length in this study are 0.15 and 400 μm, respectively. The lowest threshold current, the highest DQE and output power which obtained at the emission wavelength of 391.5 nm are 43.199 mA, 44.99% and 10.334 mW, respectively.

Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers

NASA Astrophysics Data System (ADS)

Takeda, Koji; Sato, Tomonari; Shinya, Akihiko; Nozaki, Kengo; Kobayashi, Wataru; Taniyama, Hideaki; Notomi, Masaya; Hasebe, Koichi; Kakitsuka, Takaaki; Matsuo, Shinji

2013-07-01

A low operating energy is needed for nanocavity lasers designed for on-chip photonic network applications. On-chip nanocavity lasers must be driven by current because they act as light sources driven by electronic circuits. Here, we report the high-speed direct modulation of a lambda-scale embedded active region photonic-crystal (LEAP) laser that holds three records for any type of laser operated at room temperature: a low threshold current of 4.8 µA, a modulation current efficiency of 2.0 GHz µA-0.5 and an operating energy of 4.4 fJ bit-1. Five major technologies make this performance possible: a compact buried heterostructure, a photonic-crystal nanocavity, a lateral p-n junction realized by ion implantation and thermal diffusion, an InAlAs sacrificial layer and current-blocking trenches. We believe that an output power of 2.17 µW and an operating energy of 4.4 fJ bit-1 will enable us to realize on-chip photonic networks in combination with the recently developed highly sensitive receivers.

Applications of Gunn lasers

NASA Astrophysics Data System (ADS)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x < 0.45) is used the active layer, making them candidates for light sources in plastic optical fibre (POF) based short-distance data communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE PAGES

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff; ...

2017-02-10

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

PubMed

Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

2012-06-18

By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate <10(-10) is -25.6 dBm, and the power penalty added after 25-km transmission is less than 2 dB for all 16 channels.

Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Gutowski, P.; Hałdaś, G.; Kolek, A.; Sankowska, I.; Grzonka, J.; Mizera, J.; Pierściński, K.; Bugajski, M.

2018-03-01

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.

Development of high damage threshold laser-machined apodizers and gain filters for laser applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rambo, Patrick; Schwarz, Jens; Kimmel, Mark

We have developed high damage threshold filters to modify the spatial profile of a high energy laser beam. The filters are formed by laser ablation of a transmissive window. The ablation sites constitute scattering centers which can be filtered in a subsequent spatial filter. Finally, by creating the filters in dielectric materials, we see an increased laser-induced damage threshold from previous filters created using ‘metal on glass’ lithography.

Development of high damage threshold laser-machined apodizers and gain filters for laser applications

DOE PAGES

Rambo, Patrick; Schwarz, Jens; Kimmel, Mark; ...

2016-09-27

We have developed high damage threshold filters to modify the spatial profile of a high energy laser beam. The filters are formed by laser ablation of a transmissive window. The ablation sites constitute scattering centers which can be filtered in a subsequent spatial filter. Finally, by creating the filters in dielectric materials, we see an increased laser-induced damage threshold from previous filters created using ‘metal on glass’ lithography.

Threshold analysis of pulsed lasers with application to a room-temperature Co:MgF2 laser

NASA Technical Reports Server (NTRS)

Harrison, James; Welford, David; Moulton, Peter F.

1989-01-01

Rate-equation calculations are used to model accurately the near-threshold behavior of a Co:MgF2 laser operating at room temperature. The results demonstrate the limitations of the conventional threshold analysis in cases of practical interest. This conclusion is applicable to pulsed solid-state lasers in general. The calculations, together with experimental data, are used to determine emission cross sections for the Co:MgF2 laser.

Efficiency and threshold pump intensity of CW solar-pumped solid-state lasers

NASA Technical Reports Server (NTRS)

Hwang, In H.; Lee, Ja H.

1991-01-01

The authors consider the relation between the threshold pumping intensity, the material properties, the resonator parameters, and the ultimate slope efficiencies of various solid-state laser materials for solar pumping. They clarify the relation between the threshold pump intensity and the material parameters and the relation between the ultimate slope efficiency and the laser resonator parameters such that a design criterion for the solar-pumped solid-state laser can be established. Among the laser materials evaluated, alexandrite has the highest slope efficiency of about 12.6 percent; however, it does not seem to be practical for a solar-pumped laser application because of its high threshold pump intensity. Cr:Nd:GSGG is the most promising for solar-pumped lasing. Its threshold pump intensity is about 100 air-mass-zero (AM0) solar constants and its slope efficiency is about 12 percent when thermal deformation is completely prevented.

Robust optimization of the laser induced damage threshold of dielectric mirrors for high power lasers.

PubMed

Chorel, Marine; Lanternier, Thomas; Lavastre, Éric; Bonod, Nicolas; Bousquet, Bruno; Néauport, Jérôme

2018-04-30

We report on a numerical optimization of the laser induced damage threshold of multi-dielectric high reflection mirrors in the sub-picosecond regime. We highlight the interplay between the electric field distribution, refractive index and intrinsic laser induced damage threshold of the materials on the overall laser induced damage threshold (LIDT) of the multilayer. We describe an optimization method of the multilayer that minimizes the field enhancement in high refractive index materials while preserving a near perfect reflectivity. This method yields a significant improvement of the damage resistance since a maximum increase of 40% can be achieved on the overall LIDT of the multilayer.

Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Klochkov, A. N.

The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of themore » laser ridge stripe with an n{sup +}-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.« less

Two-Color Coherent Control of Femtosecond Above-Threshold Photoemission from a Tungsten Nanotip.

PubMed

Förster, Michael; Paschen, Timo; Krüger, Michael; Lemell, Christoph; Wachter, Georg; Libisch, Florian; Madlener, Thomas; Burgdörfer, Joachim; Hommelhoff, Peter

2016-11-18

We demonstrate coherent control of multiphoton and above-threshold photoemission from a single solid-state nanoemitter driven by a fundamental and a weak second harmonic laser pulse. Depending on the relative phase of the two pulses, electron emission is modulated with a contrast of the oscillating current signal of up to 94%. Electron spectra reveal that all observed photon orders are affected simultaneously and similarly. We confirm that photoemission takes place within 10 fs. Accompanying simulations indicate that the current modulation with its large contrast results from two interfering quantum pathways leading to electron emission.

The method of pulsed x-ray detection with a diode laser.

PubMed

Liu, Jun; Ouyang, Xiaoping; Zhang, Zhongbing; Sheng, Liang; Chen, Liang; Tan, Xinjian; Weng, Xiufeng

2016-12-01

A new class of pulsed X-ray detection methods by sensing carrier changes in a diode laser cavity has been presented and demonstrated. The proof-of-principle experiments on detecting pulsed X-ray temporal profile have been done through the diode laser with a multiple quantum well active layer. The result shows that our method can achieve the aim of detecting the temporal profile of a pulsed X-ray source. We predict that there is a minimum value for the pre-bias current of the diode laser by analyzing the carrier rate equation, which exists near the threshold current of the diode laser chip in experiments. This behaviour generally agrees with the characterizations of theoretical analysis. The relative sensitivity is estimated at about 3.3 × 10 -17 C ⋅ cm 2 . We have analyzed the time scale of about 10 ps response with both rate equation and Monte Carlo methods.

Nine-channel wavelength tunable single mode laser array based on slots.

PubMed

Guo, Wei-Hua; Lu, Qiaoyin; Nawrocka, Marta; Abdullaev, Azat; O'Callaghan, James; Donegan, John F

2013-04-22

A 9-channel wavelength tunable single-mode laser array based on slots is presented. The fabricated laser array demonstrated a threshold current in a range of 19~21 mA with the SOA unbiased at 20°C under continuous wave condition. Stable single mode performances have been observed with side-mode suppression-ratio (SMSR) > 50 dB. The output power higher than 37 mW was obtained at the SOA injected current of 70 mA for all the 9 channels within the laser array. A wavelength quasi-continuous tuning range of about 27 nm has been achieved for the laser array with the temperature variations from 10°C to 45°C. This array platform is of a single growth and monolithically integrable. It can be easily fabricated by standard photolithography. In addition, it potentially removes the yield problem due to the uncertainty of the facet cleaving.

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Xia, Jinan; Hoan O, Beom; Gol Lee, Seung; Hang Lee, El

2005-03-01

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.

Neodymium: YAG laser damage threshold. A comparison of injection-molded and lathe-cut polymethylmethacrylate intraocular lenses.

PubMed

Wilson, S E; Brubaker, R F

1987-01-01

The possibility that injection-molded intraocular lenses (IOLs) with imperfections called iridescent clefts could have a decreased threshold to neodymium: YAG (Nd:YAG) laser-induced damage was investigated. Thresholds for Nd:YAG laser-induced damage were determined for injection-molded and lathe-cut polymethylmethacrylate lenses. When aimed at a membrane in contact with a posterior convex surface, the average thresholds were 0.96 +/- 0.18 mJ (Standard deviation [SD]) and 1.80 +/- 0.55 mJ, respectively. The difference was significant at P = 0.001. When injection-molding polymethylmethacrylate was used to make lathe-cut IOLs, very few iridescent clefts were present, and the threshold to Nd:YAG laser-induced damage was 0.94 +/- 0.25 mJ. Iridescent clefts are therefore produced during the injection-molding process but they do not lower the threshold to Nd:YAG laser-induced damage. Rather, the reduced threshold in injection-molded lenses is most probably a result of the polymethylmethacrylate used in their manufacture. Clinically, iridescent clefts in a lens suggest that it has been manufactured by an injection-molding process and that Nd:YAG laser posterior capsulotomy must be performed at the lowest possible energy level to avoid damage.

Interaction thresholds in Er:YAG laser ablation of organic tissue

NASA Astrophysics Data System (ADS)

Lukac, Matjaz; Marincek, Marko; Poberaj, Gorazd; Grad, Ladislav; Mozina, Janez I.; Sustercic, Dusan; Funduk, Nenad; Skaleric, Uros

1996-01-01

Because of their unique properties with regard to the absorption in organic tissue, pulsed Er:YAG lasers are of interest for various applications in medicine, such as dentistry, dermatology, and cosmetic surgery. The relatively low thermal side effects, and surgical precision of erbium medical lasers have been attributed to the micro-explosive nature of their interaction with organic tissue. In this paper, we report on preliminary results of our study of the thresholds for tissue ablation, using an opto-acoustic technique. Two laser energy thresholds for the interaction are observed. The lower energy threshold is attributed to surface water vaporization, and the higher energy threshold to explosive ablation of thin tissue layers.

Probability of growth of small damage sites on the exit surface of fused silica optics.

PubMed

Negres, Raluca A; Abdulla, Ghaleb M; Cross, David A; Liao, Zhi M; Carr, Christopher W

2012-06-04

Growth of laser damage on fused silica optical components depends on several key parameters including laser fluence, wavelength, pulse duration, and site size. Here we investigate the growth behavior of small damage sites on the exit surface of SiO₂ optics under exposure to tightly controlled laser pulses. Results demonstrate that the onset of damage growth is not governed by a threshold, but is probabilistic in nature and depends both on the current size of a damage site and the laser fluence to which it is exposed. We also develop models for use in growth prediction. In addition, we show that laser exposure history also influences the behavior of individual sites.

Broad-gain (Δλ/λ0

PubMed

Fujita, Kazuue; Furuta, Shinichi; Dougakiuchi, Tatsuo; Sugiyama, Atsushi; Edamura, Tadataka; Yamanishi, Masamichi

2011-01-31

Broad-gain operation of λ~8.7 μm quantum cascade lasers based on dual-upper-state to multiple-lower-state transition design is reported. The devices exhibit surprisingly wide (~500 cm(-1)) electroluminescence spectra which are very insensitive to voltage and temperature changes above room temperature. With recourse to the temperature-insensitivity of electroluminescence spectra, the lasers demonstrate an extremely-weak temperature-dependence of laser performances: T0-value of 510 K, associated with a room temperature threshold current density of 2.6 kA/cm2. In addition, despite such wide gain spectra, room temperature, continuous wave operation of the laser with buried hetero structure is achieved.

On-chip optical phase locking of single growth monolithically integrated Slotted Fabry Perot lasers.

PubMed

Morrissey, P E; Cotter, W; Goulding, D; Kelleher, B; Osborne, S; Yang, H; O'Callaghan, J; Roycroft, B; Corbett, B; Peters, F H

2013-07-15

This work investigates the optical phase locking performance of Slotted Fabry Perot (SFP) lasers and develops an integrated variable phase locked system on chip for the first time to our knowledge using these lasers. Stable phase locking is demonstrated between two SFP lasers coupled on chip via a variable gain waveguide section. The two lasers are biased differently, one just above the threshold current of the device with the other at three times this value. The coupling between the lasers can be controlled using the variable gain section which can act as a variable optical attenuator or amplifier depending on bias. Using this, the width of the stable phase locking region on chip is shown to be variable.

Integration of hybrid silicon lasers and electroabsorption modulators.

PubMed

Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

2008-08-18

We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Plasmonic distributed feedback lasers at telecommunications wavelengths.

PubMed

Marell, Milan J H; Smalbrugge, Barry; Geluk, Erik Jan; van Veldhoven, Peter J; Barcones, Beatrix; Koopmans, Bert; Nötzel, Richard; Smit, Meint K; Hill, Martin T

2011-08-01

We investigate electrically pumped, distributed feedback (DFB) lasers, based on gap-plasmon mode metallic waveguides. The waveguides have nano-scale widths below the diffraction limit and incorporate vertical groove Bragg gratings. These metallic Bragg gratings provide a broad bandwidth stop band (~500 nm) with grating coupling coefficients of over 5000/cm. A strong suppression of spontaneous emission occurs in these Bragg grating cavities, over the stop band frequencies. This strong suppression manifests itself in our experimental results as a near absence of spontaneous emission and significantly reduced lasing thresholds when compared to similar length Fabry-Pérot waveguide cavities. Furthermore, the reduced threshold pumping requirements permits us to show strong line narrowing and super linear light current curves for these plasmon mode devices even at room temperature.

Terahertz GaAs/AlAs quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrottke, L., E-mail: lutz@pdi-berlin.de; Lü, X.; Rozas, G.

2016-03-07

We have realized GaAs/AlAs quantum-cascade lasers operating at 4.75 THz exhibiting more than three times higher wall plug efficiencies than GaAs/Al{sub 0.25}Ga{sub 0.75}As lasers with an almost identical design. At the same time, the threshold current density at 10 K is reduced from about 350 A/cm{sup 2} for the GaAs/Al{sub 0.25}Ga{sub 0.75}As laser to about 120 A/cm{sup 2} for the GaAs/AlAs laser. Substituting AlAs for Al{sub 0.25}Ga{sub 0.75}As barriers leads to a larger energy separation between the subbands reducing the probability for leakage currents through parasitic states and for reabsorption of the laser light. The higher barriers allow for a shift of themore » quasi-continuum of states to much higher energies. The use of a binary barrier material may also reduce detrimental effects due to the expected composition fluctuations in ternary alloys.« less

Experimental demonstration of monolithically integrated 16 channel DFB laser array fabricated by nanoimprint lithography with AWG multiplexer and SOA for WDM-PON application

NASA Astrophysics Data System (ADS)

Zhao, Jianyi; Chen, Xin; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen

2015-03-01

A 16-channel monolithically integrated distributed feedback (DFB) laser array with arrayed waveguide gratings (AWGs) multiplexer and semiconductor optical amplifier (SOA) has been fabricated using nanoimprint technology. Selective lasing wavelength with 200 GHz frequency space has been obtained. The typical threshold current is between 20 mA and 30 mA. The output power is higher than 1 mW with 350 mA current in SOA. The side mode suppression ratio (SMSR) of the spectrum is better than 40 dB.

A 16-Channel Distributed-Feedback Laser Array with a Monolithic Integrated Arrayed Waveguide Grating Multiplexer for a Wavelength Division Multiplex-Passive Optical Network System Network

NASA Astrophysics Data System (ADS)

Zhao, Jian-Yi; Chen, Xin; Zhou, Ning; Huang, Xiao-Dong; Cao, Ming-De; Liu, Wen

2014-07-01

A 16-channel distributed-feedback (DFB) laser array with a monolithic integrated arrayed waveguide grating multiplexer for a wavelength division multiplex-passive optical network system is fabricated by using the butt-joint metal organic chemical vapor deposition technology and nanoimpirnt technology. The results show that the threshold current is about 20-30 mA at 25°C. The DFB laser side output power is about 16 mW with a 150 mA injection current. The lasing wavelength is from 1550 nm to 1575 nm covering a more than 25 nm range with 200 GHz channel space. A more than 55 dB sidemode suppression ratio is obtained.

Beyond the random phase approximation: Stimulated Brillouin backscatter for finite laser coherence times

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korotkevich, Alexander O.; Lushnikov, Pavel M., E-mail: plushnik@math.unm.edu; Landau Institute for Theoretical Physics, 2 Kosygin Str., Moscow 119334

2015-01-15

We developed a linear theory of backward stimulated Brillouin scatter (BSBS) of a spatially and temporally random laser beam relevant for laser fusion. Our analysis reveals a new collective regime of BSBS (CBSBS). Its intensity threshold is controlled by diffraction, once cT{sub c} exceeds a laser speckle length, with T{sub c} the laser coherence time. The BSBS spatial gain rate is approximately the sum of that due to CBSBS, and a part which is independent of diffraction and varies linearly with T{sub c}. The CBSBS spatial gain rate may be reduced significantly by the temporal bandwidth of KrF-based laser systemsmore » compared to the bandwidth currently available to temporally smoothed glass-based laser systems.« less

Radiation Effects in Nanostructures: Comparison of Proton Irradiation Induced Changes on Quantum Dots and Quantum Wells

NASA Technical Reports Server (NTRS)

Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.

2000-01-01

Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.

Continuous-wave operation of a room-temperature, diode-laser-pumped, 946-nm Nd:YAG laser

NASA Technical Reports Server (NTRS)

Fan, T. Y.; Byer, Robert L.

1987-01-01

Single-stripe diode-laser-pumped operation of a continuous-wave 946-nm Nd:YAG laser with less than 10-mW threshold has been demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Low threshold and high efficiency solar-pumped laser with Fresnel lens and a grooved Nd:YAG rod

NASA Astrophysics Data System (ADS)

Guan, Zhe; Zhao, Changming; Yang, Suhui; Wang, Yu; Ke, Jieyao; Gao, Fengbin; Zhang, Haiyang

2016-11-01

Sunlight is considered as a new efficient source for direct optical-pumped solid state lasers. High-efficiency solar pumped lasers with low threshold power would be more promising than semiconductor lasers with large solar panel in space laser communication. Here we report a significant advance in solar-pumped laser threshold by pumping Nd:YAG rod with a grooved sidewall. Two-solar pumped laser setups are devised. In both cases, a Fresnel lens is used as the primary sunlight concentrator. Gold-plated conical cavity with a liquid light-guide lens is used as the secondary concentrator to further increase the solar energy concentration. In the first setup, solar pumping a 6mm diameter Nd:YAG rod, maximum laser power of 31.0W/m2 cw at 1064nm is produced, which is higher than the reported record, and the slope efficiency is 4.98% with the threshold power on the surface of Fresnel lens is 200 W. In the second setup, a 5 mm diameter laser rod output power is 29.8W/m2 with a slope efficiency of 4.3%. The threshold power of 102W is obtained, which is 49% lower than the former. Meanwhile, the theoretical calculating of the threshold power and slope efficiency of the solar-pumped laser has been established based on the rate-equation of a four-level system. The results of the finite element analysis by simulation software are verified in experiment. The optimization of the conical cavity by TraceProsoftware and the optimization of the laser resonator by LASCADare useful for the design of a miniaturization solar- pumped laser.

Computer-Assisted Experiments with a Laser Diode

ERIC Educational Resources Information Center

Kraftmakher, Yaakov

2011-01-01

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The "h/e" ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a…

Laser-Induced Damage Threshold and Certification Procedures for Optical Materials

NASA Technical Reports Server (NTRS)

1997-01-01

This document provides instructions for performing laser-induced-damage-threshold tests and pass-fail certification tests on optical materials used in pulsed-laser systems. The optical materials to which these procedures apply include coated and uncoated optical substrates, laser crystals, Q-switches, polarizers, and other optical components employed in pulsed-laser systems.

Nonlinear threshold effect in the Z-scan method of characterizing limiters for high-intensity laser light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tereshchenko, S. A., E-mail: tsa@miee.ru; Savelyev, M. S.; Podgaetsky, V. M.

A threshold model is described which permits one to determine the properties of limiters for high-powered laser light. It takes into account the threshold characteristics of the nonlinear optical interaction between the laser beam and the limiter working material. The traditional non-threshold model is a particular case of the threshold model when the limiting threshold is zero. The nonlinear characteristics of carbon nanotubes in liquid and solid media are obtained from experimental Z-scan data. Specifically, the nonlinear threshold effect was observed for aqueous dispersions of nanotubes, but not for nanotubes in solid polymethylmethacrylate. The threshold model fits the experimental Z-scanmore » data better than the non-threshold model. Output characteristics were obtained that integrally describe the nonlinear properties of the optical limiters.« less

LONG-TERM SD-OCT/SLO IMAGING OF NEURORETINA AND RETINAL PIGMENT EPITHELIUM AFTER SUB-THRESHOLD INFRARED LASER TREATMENT OF DRUSEN

PubMed Central

MOJANA, FRANCESCA; BRAR, MANPREET; CHENG, LINGYUN; BARTSCH, DIRK-UWE G.; FREEMAN, WILLIAM R.

2012-01-01

PURPOSE To determine the long-term effect of sub-threshold diode laser treatment for drusen in patients with non-exudative age-related macular degeneration (AMD) with spectral domain optical coherence tomography combined with simultaneous scanning laser ophthalmoscope (SD-OCT/SLO). METHODS 8 eyes of 4 consecutive AMD patients with bilateral drusen previously treated with sub-threshold diode laser were imaged with SD-OCT/SLO. Abnormalities in the outer retina layers reflectivity as seen with SD-OCT/SLO were retrospectively analyzed and compared with color fundus pictures and autofluorescence images (AF) acquired immediately before and after the laser treatment. RESULTS A focal discrete disruptions in the reflectivity of the outer retinal layers was noted in 29% of the laser lesions. The junction in between the inner and outer segment of the photoreceptor was more frequently affected, with associated focal damage of the outer nuclear layer. Defects of the RPE were occasionally detected. These changes did not correspond to threshold burns on color fundus photography, but corresponded to focal areas of increased AF in the majority of the cases. CONCLUSIONS Sub-threshold diode laser treatment causes long-term disruption of the retinal photoreceptor layer as analyzed by SD-OCT/SLO. The concept that sub-threshold laser treatment can achieve a selected RPE effect without damage to rods and cones may be flawed. PMID:21157398

Quantitative measurement of electron number in nanosecond and picosecond laser-induced air breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yue; Sawyer, Jordan C.; Su, Liu

2016-05-07

Here we present quantitative measurements of total electron numbers in laser-induced air breakdown at pressures ranging from atmospheric to 40 bar{sub g} by 10 ns and 100 ps laser pulses. A quantifiable definition for the laser-induced breakdown threshold is identified by a sharp increase in the measurable total electron numbers via dielectric-calibrated coherent microwave scattering. For the 10 ns laser pulse, the threshold of laser-induced breakdown in atmospheric air is defined as the total electron number of ∼10{sup 6}. This breakdown threshold decreases with an increase of pressure and laser photon energy (shorter wavelength), which is consistent with the theory of initialmore » multiphoton ionization and subsequent avalanche processes. For the 100 ps laser pulse cases, a clear threshold is not present and only marginal pressure effects can be observed, which is due to the short pulse duration leading to stronger multiphoton ionization and minimal collisional avalanche ionization.« less

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

PubMed

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

2013-11-18

Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

The 1.1 micrometer and visible emission semiconductor diode lasers. [(AlGa)As lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Nuese, C. J.; Kressel, H.

1978-01-01

In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

Cutaneous pain effects induced by Nd:YAG and CO2 laser stimuli

NASA Astrophysics Data System (ADS)

Wang, Jia-Rui; Yu, Guang-Yuan; Yang, Zai-Fu; Chen, Hong-Xia; Hu, Dong-Dong; Zou, Xian-Biao

2012-12-01

The near infrared laser technique can activate cutaneous nociceptors with high specificity and reproducibility and be used in anti-riot equipment. This study aimed to explore cutaneous pain effect and determine the threshold induced by Nd:YAG and CO2 laser stimuli. The corresponding wavelength was 1.32μm and 10.6μm. The pain effect was assessed in three healthy subjects (1 woman and 2 men) on the skin of dorsum of both hands. The energy of each pulse and whether the subjects felt a painful sensation after each stimulus were recorded. A simplified Bliss Method was used to calculate the pain threshold which were determined under three pulse durations for Nd:YAG laser and one pulse duration for CO2 laser. As a result the pain thresholds were determined to be 5.6J/cm2, 5.4J/cm2 and 5.0J/cm2 respectively when using Nd:YAG laser, 4.0mm beam diameter, 8ms, 0.1s and 1s pulse duration. The pain threshold was 1.0J/cm2 when using CO2 laser, 4.0mm beam diameter and 0.1s pulse duration. We concluded that the threshold of cutaneous pain elicited by 1.32μm laser was independent upon the pulse duration when the exposure time ranged from 8ms to 1s. Under the same exposure condition, the threshold of cutaneous pain elicited by 1.32μm laser was higher than that elicited by 10.6μm laser.

Threshold pump power of a solar-pumped dye laser

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Kim, Kyung C.; Kim, Kyong H.

1988-01-01

Threshold solar power for dye laser pumping has been determined by measuring the gain of a rhodamine 6G dye laser amplifier at various solar-simulated irradiances on an amplifier cell. The measured threshold was 20,000 solar constants (2.7 kW/sq cm) for the dye volume of 2 x 5 x 40 cu mm and the optimum dye concentration of 0.001 M. The threshold is about one-third of that achievable with a high-intensity solar concentrator.

Ultrafast Passive Shields for Laser and Ballistic Protection

DTIC Science & Technology

1991-07-15

chemically polymerized P(DPA)) as a binder, and these were tested for ablation (i.e. laser damage threshold ) limits. Table IV below summarizes these results...50, 100, 250 and 500 AJ/pulse o 1.G, 2.5, 5.0 mJ/pulse. The following energies were used for the preliminary laser damage threshold tests: o 2.5, 5.0...these were tested for ablation (i.e. laser damage threshold ) limits. Table VI summarizes these results which are all for tests in the absence of an iris

An in vitro Corneal Model with a Laser Damage Threshold at 2 Micrometers That is Similar to That in the Rabbit

DTIC Science & Technology

2007-11-01

Proceedings 3. DATES COVERED (From - To) June 2007- November 2007 4. TITLE AND SUBTITLE An In Vitro Corneal Model with a Laser Damage Threshold at 2...2-µm wavelength output of a thulium fiber laser with 4 mm beam diameter for 0.25 seconds in a thermally controlled environment and then assayed for...data in the literature. 15. SUBJECT TERMS corneal organotypic culture, laser , threshold, thermography, Probit 16. SECURITY CLASSIFICATION OF

The ablation threshold of Er;Cr:YSGG laser radiation in bone tissue

NASA Astrophysics Data System (ADS)

Benetti, Carolina; Zezell, Denise Maria

2015-06-01

In laser cut clinical applications, the use of energy densities lower than the ablation threshold causes increase of temperature of the irradiated tissue, which might result in an irreversible thermal damage. Hence, knowing the ablation threshold is crucial for insuring the safety of these procedures. The aim of this study was to determine the ablation threshold of the Er,Cr:YSGG laser in bone tissue. Bone pieces from jaws of New Zealand rabbits were cut as blocks of 5 mm × 8 mm and polished with sandpaper. The Er,Cr:YSGG laser used in this study had wavelength of 2780 nm, 20 Hz of frequency, and the irradiation condition was chosen so as to simulate the irradiation during a surgical procedure. The laser irradiation was performed with 12 different values of laser energy densities, between 3 J/cm2 and 42 J/cm2, during 3 seconds, resulting in the overlap of 60 pulses. This process was repeated in each sample, for all laser energy densities. After irradiation, the samples were analyzed by scanning electron microscope (SEM), and it was measured the crater diameter for each energy density. By fitting a curve that related the ablation threshold with the energy density and the corresponding diameter of ablation crater, it was possible to determine the ablation threshold. The results showed that the ablation threshold of the Er,Cr:YSGG in bone tissue was 1.95+/-0.42 J/cm2.

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

NASA Technical Reports Server (NTRS)

Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

1989-01-01

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Exciton recombination in lasing contributing an opposite abrupt change of the electrical behavior near threshold between GaN- and GaAs- multi-quantum-well laser diodes

NASA Astrophysics Data System (ADS)

Feng, Liefeng; Wang, Shupeng; Li, Yang; Li, Ding; Wang, Cunda

2018-03-01

The opposite sudden change of electrical characteristics between narrow and wide bang-gap multi-quantum-well (MQW) laser diodes (LDs) in the threshold region (which is defined as a current region between two kinks of IdV/dI-I curve) shows an interesting phenomenon that the slope changes of IdV/dI-I or V j -I curve between two adjacent regions (‘below’ and ‘in’, or ‘in’ and ‘above’ threshold region) display an approximate e-exponential relationship with the wavelengths of LDs. After comparing the exciton binding energy in different MQW LDs, and analyzing the temperature dependence of V j -I and IdV/dI-I of GaN MQW LDs, we suggested that the fraction of exciton recombination into lasing is a reason causing the relationship of sudden changes of the electrical characteristics with wavelengths of LDs.

Potential of solar-simulator-pumped alexandrite lasers

NASA Technical Reports Server (NTRS)

Deyoung, Russell J.

1990-01-01

An attempt was made to pump an alexandrite laser rod using a Tamarak solar simulator and also a tungsten-halogen lamp. A very low optical laser cavity was used to achieve the threshold minimum pumping-power requirement. Lasing was not achieved. The laser threshold optical-power requirement was calculated to be approximately 626 W/sq cm for a gain length of 7.6 cm, whereas the Tamarak simulator produces 1150 W/sq cm over a gain length of 3.3 cm, which is less than the 1442 W/sq cm required to reach laser threshold. The rod was optically pulsed with 200 msec pulses, which allowed the alexandrite rod to operate at near room temperature. The optical intensity-gain-length product to achieve laser threshold should be approximately 35,244 solar constants-cm. In the present setup, this product was 28,111 solar constants-cm.

Epoxy-paint stripping using TEA CO2 laser: Determination of threshold fluence and the process parameters

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Bhargava, P.; Biswas, A. K.; Sahu, Shasikiran; Mandloi, V.; Ittoop, M. O.; Khattak, B. Q.; Tiwari, M. K.; Kukreja, L. M.

2013-03-01

It is shown that the threshold fluence for laser paint stripping can be accurately estimated from the heat of gasification and the absorption coefficient of the epoxy-paint. The threshold fluence determined experimentally by stripping of the epoxy-paint on a substrate using a TEA CO2 laser matches closely with the calculated value. The calculated threshold fluence and the measured absorption coefficient of the paint allowed us to determine the epoxy paint thickness that would be removed per pulse at a given laser fluence even without experimental trials. This was used to predict the optimum scan speed required to strip the epoxy-paint of a given thickness using a high average power TEA CO2 laser. Energy Dispersive X-Ray Fluorescence (EDXRF) studies were also carried out on laser paint-stripped concrete substrate to show high efficacy of this modality.

Experimental and theoretical characterization of deep penetration welding threshold induced by 1-μm laser

NASA Astrophysics Data System (ADS)

Zou, J. L.; He, Y.; Wu, S. K.; Huang, T.; Xiao, R. S.

2015-12-01

The deep penetration-welding threshold (DPWT) is the critical value that describes the welding mode transition from the thermal conduction to the deep penetration. The objective of this research is to clarify the DPWT induced by the lasers with wavelength of 1 μm (1-μm laser), based on experimental observation and theoretical analysis. The experimental results indicated that the DPWT was the ratio between laser power and laser spot diameter (P/d) rather than laser power density (P/S). The evaporation threshold was smaller than the DPWT, while the jump threshold of the evaporated mass flux in the molten pool surface was consistent with the DPWT. Based on the force balance between the evaporation recoil pressure and the surface tension pressure at the gas-liquid interface of the molten pool as well as the temperature field, we developed a self-focusing model, which further confirmed the experimental results.

Static and Dynamic Effects of Lateral Carrier Diffusion in Semiconductor Lasers

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

2002-01-01

Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.

Ideal laser-beam propagation through high-temperature ignition Hohlraum plasmas.

PubMed

Froula, D H; Divol, L; Meezan, N B; Dixit, S; Moody, J D; Neumayer, P; Pollock, B B; Ross, J S; Glenzer, S H

2007-02-23

We demonstrate that a blue (3omega, 351 nm) laser beam with an intensity of 2 x 10(15) W cm(-2) propagates nearly within the original beam cone through a millimeter scale, T(e)=3.5 keV high density (n(e)=5 x 10(20) cm(-3)) plasma. The beam produced less than 1% total backscatter at these high temperatures and densities; the resulting transmission is greater than 90%. Scaling of the electron temperature in the plasma shows that the plasma becomes transparent for uniform electron temperatures above 3 keV. These results are consistent with linear theory thresholds for both filamentation and backscatter instabilities inferred from detailed hydrodynamic simulations. This provides a strong justification for current inertial confinement fusion designs to remain below these thresholds.

Improved laser damage threshold for chalcogenide glasses through surface microstructuring

NASA Astrophysics Data System (ADS)

Florea, Catalin; Sanghera, Jasbinder; Busse, Lynda; Shaw, Brandon; Aggarwal, Ishwar

2011-03-01

We demonstrate improved laser damage threshold of chalcogenide glasses with microstructured surfaces as compared to chalcogenide glasses provided with traditional antireflection coatings. The surface microstructuring is used to reduce Fresnel losses over large bandwidths in As2S3 glasses and fibers. The treated surfaces show almost a factor of two of improvement in the laser damage threshold when compared with untreated surfaces.

Laser damage threshold of gelatin and a copper phthalocyanine doped gelatin optical limiter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brant, M.C.; McLean, D.G.; Sutherland, R.L.

1996-12-31

The authors demonstrate optical limiting in a unique guest-host system which uses neither the typical liquid or solid host. Instead, they dope a gelatin gel host with a water soluble Copper (II) phthalocyaninetetrasulfonic acid, tetrasodium salt (CuPcTs). They report on the gelatin`s viscoelasticity, laser damage threshold, and self healing of this damage. The viscoelastic gelatin has mechanical properties quite different than a liquid or solid. The authors` laser measurements demonstrate that the single shot damage threshold of the undoped gelatin host increases with decreasing gelatin concentration. The gelatin also has a much higher laser damage threshold than a stiff acrylic.more » Unlike brittle solids, the soft gelatin self heals from laser induced damage. Optical limiting test also show the utility of a gelatin host doped with CuPcTs. The CuPcTs/gelatin matrix is not damaged at incident laser energies 5 times the single shot damage threshold of the gelatin host. However, at this high laser energy the CuPcTs is photo bleached at the beam waist. The authors repair photo bleached sites by annealing the CuPcTs/gelatin matrix.« less

Feedback effects in optical communication systems: characteristic curve for single-mode InGaAsP lasers.

PubMed

Brivio, F; Reverdito, C; Sacchi, G; Chiaretti, G; Milani, M

1992-08-20

An experimental analysis of InGaAsP injection lasers shows an unexpected decrease of the differential quantum efficiency as a function of injected current when optical power is fed back into the active cavity of a diode inserted into a long transmission line. To investigate the response of laser diodes to optical feedback, we base our analysis on a microscopic model, resulting in a set of coupled equations that include the microscopic parameters that characterize the material and the device. This description takes into account the nonlinear dependence of the interband carrier lifetime on the level of optical feedback. Good agreement between the analytical description and experimental data is obtained for threshold current and differential quantum efficiency as functions of the feedback ratio.

Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

PubMed

Tanabe, Katsuaki; Guimard, Denis; Bordel, Damien; Iwamoto, Satoshi; Arakawa, Yasuhiko

2010-05-10

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2). (c) 2010 Optical Society of America.

Ocular dynamics and visual tracking performance after Q-switched laser exposure

NASA Astrophysics Data System (ADS)

Zwick, Harry; Stuck, Bruce E.; Lund, David J.; Nawim, Maqsood

2001-05-01

In previous investigations of q-switched laser retinal exposure in awake task oriented non-human primates (NHPs), the threshold for retinal damage occurred well below that of the threshold for permanent visual function loss. Visual function measures used in these studies involved measures of visual acuity and contrast sensitivity. In the present study, we examine the same relationship for q-switched laser exposure using a visual performance task, where task dependency involves more parafoveal than foveal retina. NHPs were trained on a visual pursuit motor tracking performance task that required maintaining a small HeNe laser spot (0.3 degrees) centered in a slowly moving (0.5deg/sec) annulus. When NHPs reliably produced visual target tracking efficiencies > 80%, single q-switched laser exposures (7 nsec) were made coaxially with the line of sight of the moving target. An infrared camera imaged the pupil during exposure to obtain the pupillary response to the laser flash. Retinal images were obtained with a scanning laser ophthalmoscope 3 days post exposure under ketamine and nembutol anesthesia. Q-switched visible laser exposures at twice the damage threshold produced small (about 50mm) retinal lesions temporal to the fovea; deficits in NHP visual pursuit tracking were transient, demonstrating full recovery to baseline within a single tracking session. Post exposure analysis of the pupillary response demonstrated that the exposure flash entered the pupil, followed by 90 msec refractory period and than a 12 % pupillary contraction within 1.5 sec from the onset of laser exposure. At 6 times the morphological threshold damage level for 532 nm q-switched exposure, longer term losses in NHP pursuit tracking performance were observed. In summary, q-switched laser exposure appears to have a higher threshold for permanent visual performance loss than the corresponding threshold to produce retinal threshold injury. Mechanisms of neural plasticity within the retina and at higher visual brain centers may mediat

Effects of polarization and absorption on laser induced optical breakdown threshold for skin rejuvenation

NASA Astrophysics Data System (ADS)

Varghese, Babu; Bonito, Valentina; Turco, Simona; Verhagen, Rieko

2016-03-01

Laser induced optical breakdown (LIOB) is a non-linear absorption process leading to plasma formation at locations where the threshold irradiance for breakdown is surpassed. In this paper we experimentally demonstrate the influence of polarization and absorption on laser induced breakdown threshold in transparent, absorbing and scattering phantoms made from water suspensions of polystyrene microspheres. We demonstrate that radially polarized light yields a lower irradiance threshold for creating optical breakdown compared to linearly polarized light. We also demonstrate that the thermal initiation pathway used for generating seed electrons results in a lower irradiance threshold compared to multiphoton initiation pathway used for optical breakdown.

Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range

NASA Technical Reports Server (NTRS)

Hsieh, H.-H.; Fonstad, C. G.

1980-01-01

Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.

Diode-Pumped Organo-Lead Halide Perovskite Lasing in a Metal-Clad Distributed Feedback Resonator.

PubMed

Jia, Yufei; Kerner, Ross A; Grede, Alex J; Brigeman, Alyssa N; Rand, Barry P; Giebink, Noel C

2016-07-13

Organic-inorganic lead halide perovskite semiconductors have recently reignited the prospect of a tunable, solution-processed diode laser, which has the potential to impact a wide range of optoelectronic applications. Here, we demonstrate a metal-clad, second-order distributed feedback methylammonium lead iodide perovskite laser that marks a significant step toward this goal. Optically pumping this device with an InGaN diode laser at low temperature, we achieve lasing above a threshold pump intensity of 5 kW/cm(2) for durations up to ∼25 ns at repetition rates exceeding 2 MHz. We show that the lasing duration is not limited by thermal runaway and propose instead that lasing ceases under continuous pumping due to a photoinduced structural change in the perovskite that reduces the gain on a submicrosecond time scale. Our results indicate that the architecture demonstrated here could provide the foundation for electrically pumped lasing with a threshold current density Jth < 5 kA/cm(2) under sub-20 ns pulsed drive.

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

PubMed

Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

2013-04-08

In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Development of Advanced Laser Diode Sources

NASA Technical Reports Server (NTRS)

Coleman, J. J.; Papen, G. C.

1998-01-01

The design and operation of InGaAs-GaAs-AlGaAs asymmetric cladding ridge waveguide distributed Bragg reflector lasers is presented. Targeted for the remote sensing of water vapor with absorption lines in the lambda approximately 930 nm region, these devices operate CW with threshold currents as low as 11 MA and slope efficiencies as high as 0.37 W/A. Tbey also operate with over 30-dB side-mode suppression, and the typical CW characteristic temperature, T(sub o), is 95 K.

Low-threshold, CW, all-solid-state Ti:Al2O3 laser

NASA Technical Reports Server (NTRS)

Harrison, James; Finch, Andrew; Rines, David M.; Rines, Glen A.; Moulton, Peter F.

1991-01-01

A CW Ti:Al2O3 ring laser with a threshold power of 119 mW is demonstrated. It provides a tunable source of single-frequency, diffraction-limited radiation that is suitable for injection seeding. The Ti:Al2O3 laser is operated with a diode-laser-pumped, frequency-doubled, Nd:YAG laser as the sole pump source.

Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

PubMed

Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-06-17

Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

NASA Astrophysics Data System (ADS)

Eshghi, M. J.; Majdabadi, A.; Koohian, A.

2017-01-01

In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

Design and development of 24 times high-power laser beam expander

NASA Astrophysics Data System (ADS)

Lin, Zhao-heng; Gong, Xiu-ming; Wu, Shi-bin; Tan, Yi; Jing, Hong-wei; Wei, Zhong-wei

2013-09-01

As currently, laser calibration, laser radar, laser ranging and the relative field raised up the demand for high magnification laser beam expander. This article intends to introduce a high-energy laser beam expander research and design, large- diameter, wide-band, high-magnification and small obscuration ratio are the main features. By using Cassegrain reflective optical system, this laser beam expander achieves 24 times beam expand, and outgoing effective limiting aperture is Φ600 mm, band scope between 0.45μm to 5μm, single-pulse laser damage threshold greater than 1J/cm2, continuous-wave laser damage threshold greater than 200W/cm2 and obscuration ratio 1:10. Primary mirror underside support uses 9 points float supporting, lateral support mainly depends on mercury belt support and assists by mandrel ball head positioning support. An analyzing base on finite element analysis software ANSYS, and primary mirror deformation status analysis with debug mode and operativemode, when inputs four groups of Angle 170°, 180°, 210° and 240° , mercury belt under each group of angle load-bearing is 65%, 75% , 85% and 100% respectively, totally 16 workingcondition analyze results. At last, the best way to support primary mirror is finalized. Through design of secondary mirror to achieve a five-dimensional precision fine-tune. By assembling and debugging laser beam expander, Zygo interferometer detection system proof image quality (RMS) is 0.043λ (λ=632.8nm), stability (RMS) is 0.007λ (λ=632.8nm), and effective transmission hit 94%, meets the requirements of practical application completely.

Mode control in photonic crystal surface emitting lasers (PCSELs) through in-plane feedback (Conference Presentation)

NASA Astrophysics Data System (ADS)

Taylor, Richard J. E.; Li, Guangrui; Ivanov, Pavlo; Childs, David T. D.; Stevens, Ben J.; Babazadeh, Nasser; Ignatova, Olesya; Hogg, Richard A.

2017-02-01

All-semiconductor photonic crystal surface-emitting lasers (PCSELs) operating in CW mode at room temperature and coherently coupled arrays of these lasers are reviewed. These PCSELs are grown via MOVPE on GaAs substrates and include QW active elements and GaAs/InGaP photonic crystal (PC) layer situated above this active zone. Atoms of triangular shapes have been shown to increase optical power from the PCSEL but are also shown to result in a competition between lasing modes. Simulation shows that the energy splitting of lasing modes is smaller for triangular atoms, than for circles making high power single-mode devices difficult to achieve. In this work we experimentally investigate the effect of lateral optical feedback introduced by a facet cleave along one or two perpendicular PCSEL edges. This cleavage plane is misaligned to the PC resulting in a periodic variation of facet phase along the side of the device. Results confirm that a single cleave selects the lowest threshold 2D lasing mode, resulting in a 20% reduction in threshold current and favours single-mode emission. The addition of a second cleave at right-angles to the first has no significant effect upon threshold current. The virgin device is shown to have a symmetric far-field (1 degree) whilst a single cleave produces a 1 degree divergence perpendicular to cleave and 5 degree parallel to cleave. The second orthogonal cleave results in the far field becoming symmetric again but with a divergence angle of 1 degree indicating that single-mode lasing is supported over a wider area.

Determination of sensation threshold from small pulse trains of 2.01μm laser light

NASA Astrophysics Data System (ADS)

Dugan, Daniel C.; Johnson, Thomas E.

2009-02-01

The determination of sensation thresholds has applications ranging from uses in the medical community such as neural pathway mapping and for the diagnosis of diabetic neuropathy, to potential uses in determining safety standards. This study sought to determine the sensation threshold, and the distribution of sensation probabilities, for pulse trains ranging from two 10 ms pulses to nine 10 ms pulses from 2.01 μm laser light incident on a human forearm and chest. Threshold was defined as the energy density that would elicit sensation 50% of the time (ED50). A method of levels approach was used in conjunction with a monovariate binary response model to determine the ED50. We determined the ED50 and also a distribution of threshold probabilities. Threshold was found to be largely dependant on total energy deposited for smaller pulse trains, and thus independent of the number of pulses. Total energy becomes less important as the number of pulses increases however, and a decrease in threshold was measured for a nine pulse train as compared to one through four pulse trains. Thus we have demonstrated that this method is a useful and easy way for determining sensation thresholds from a 2.01 μm laser for possible clinical use. We have also demonstrated that lower power lasers when pulsed can elicit sensation at comparable levels to higher power single pulse lasers.

Femtosecond laser corneal surgery with in situ determination of the laser attenuation and ablation threshold by second harmonic generation

NASA Astrophysics Data System (ADS)

Plamann, Karsten; Nuzzo, Valeria; Albert, Olivier; Mourou, Gérard A.; Savoldelli, Michèle; Dagonet, Françoise; Donate, David; Legeais, Jean-Marc

2007-02-01

Femtosecond lasers start to be routinely used in refractive eye surgery. Current research focuses on their application to glaucoma and cataract surgery as well as cornea transplant procedures. To avoid unwanted tissue damage during the surgical intervention it is of utmost importance to maintain a working energy just above the ablation threshold and maintain the laser energy at this working point independently of the local and global tissue properties. To quantify the attenuation of the laser power density in the tissue by absorption, scattering and modification of the point spread function we monitor the second harmonic radiation generated in the collagen matrix of the cornea when exposed to ultrashort laser pulses. We use a CPA system with a regenerative amplifier delivering pulses at a wavelength of 1.06 μm, pulse durations of 400 fs and a maximum energy of 60 μJ. The repetition rate is adjustable from single shot up to 10 kHz. The experiments are performed on human corneas provided by the French Eye bank. To capture the SHG radiation we use a photomultiplier tube connected to a lockin amplifier tuned to the laser repetition rate. The measured data indicates an exponential decay of the laser beam intensity in the volume of the sample and allows for the quantification of the attenuation coefficient and its correlation with the optical properties of the cornea. Complementary analyses were performed on the samples by ultrastructural histology.

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE PAGES

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit; ...

2017-06-01

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Nanosecond laser pulses for mimicking thermal effects on nanostructured tungsten-based materials

NASA Astrophysics Data System (ADS)

Besozzi, E.; Maffini, A.; Dellasega, D.; Russo, V.; Facibeni, A.; Pazzaglia, A.; Beghi, M. G.; Passoni, M.

2018-03-01

In this work, we exploit nanosecond laser irradiation as a compact solution for investigating the thermomechanical behavior of tungsten materials under extreme thermal loads at the laboratory scale. Heat flux factor thresholds for various thermal effects, such as melting, cracking and recrystallization, are determined under both single and multishot experiments. The use of nanosecond lasers for mimicking thermal effects induced on W by fusion-relevant thermal loads is thus validated by direct comparison of the thresholds obtained in this work and the ones reported in the literature for electron beams and millisecond laser irradiation. Numerical simulations of temperature and thermal stress performed on a 2D thermomechanical code are used to predict the heat flux factor thresholds of the different thermal effects. We also investigate the thermal effect thresholds of various nanostructured W coatings. These coatings are produced by pulsed laser deposition, mimicking W coatings in tokamaks and W redeposited layers. All the coatings show lower damage thresholds with respect to bulk W. In general, thresholds decrease as the porosity degree of the materials increases. We thus propose a model to predict these thresholds for coatings with various morphologies, simply based on their porosity degree, which can be directly estimated by measuring the variation of the coating mass density with respect to that of the bulk.

CORRELATIONS IN LIGHT FROM A LASER AT THRESHOLD,

DTIC Science & Technology

Temporal correlations in the electromagnetic field radiated by a laser in the threshold region of oscillation (from one tenth of threshold intensity...to ten times threshold ) were measured by photoelectron counting techniques. The experimental results were compared with theoretical predictions based...shows that the intensity fluctuations at about one tenth threshold are nearly those of a Gaussian field and continuously approach those of a constant amplitude field as the intensity is increased. (Author)

Qualification of quantum cascade lasers for space environments

NASA Astrophysics Data System (ADS)

Myers, Tanya L.; Cannon, Bret D.; Brauer, Carolyn S.; Crowther, Blake G.; Hansen, Stewart

2014-06-01

Laser-based instruments are enabling a new generation of scientific instruments for space environments such as those used in the exploration of Mars. The lasers must be robust and able to withstand the harsh environment of space, including radiation exposure. Quantum cascade lasers (QCLs), which are semiconductor lasers that emit in the infrared spectral region, offer the potential for the development of novel laser-based instruments for space applications. The performance of QCLs after radiation exposure, however, has not been reported. We report on work to quantify the performance of QCLs after exposure to two different radiation sources, 64 MeV protons and Cobalt-60 gamma rays, at radiation levels likely to be encountered during a typical space flight mission. No significant degradation in threshold current or slope efficiency is observed for any of the seven Fabry-Perot QCLs that are tested.

Degenerate band edge laser

NASA Astrophysics Data System (ADS)

Veysi, Mehdi; Othman, Mohamed A. K.; Figotin, Alexander; Capolino, Filippo

2018-05-01

We propose a class of lasers based on a fourth-order exceptional point of degeneracy (EPD) referred to as the degenerate band edge (DBE). EPDs have been found in parity-time-symmetric photonic structures that require loss and/or gain; here we show that the DBE is a different kind of EPD since it occurs in periodic structures that are lossless and gainless. Because of this property, a small level of gain is sufficient to induce single-frequency lasing based on a synchronous operation of four degenerate Floquet-Bloch eigenwaves. This lasing scheme constitutes a light-matter interaction mechanism that leads also to a unique scaling law of the laser threshold with the inverse of the fifth power of the laser-cavity length. The DBE laser has the lowest lasing threshold in comparison to a regular band edge laser and to a conventional laser in cavities with the same loaded quality (Q ) factor and length. In particular, even without mirror reflectors the DBE laser exhibits a lasing threshold which is an order of magnitude lower than that of a uniform cavity laser of the same length and with very high mirror reflectivity. Importantly, this novel DBE lasing regime enforces mode selectivity and coherent single-frequency operation even for pumping rates well beyond the lasing threshold, in contrast to the multifrequency nature of conventional uniform cavity lasers.

CO2 laser stapedotomy safety: influence of laser energy and time on bone-conduction hearing levels.

PubMed

Schönfeld, Uwe; Weiming, Hu; Hofmann, Veit M; Jovanovic, Sergije; Albers, Andreas E

2017-12-01

Total laser energy in CO 2 stapedotomy depends on the laser settings and the amount of applications. It is unclear if the amount of total laser energy affects bone-conduction hearing thresholds and if possible effects are temporary or permanent. Alterations of bone-conduction hearing thresholds after single or multiple-shot CO 2 laser stapedotomy were analyzed between 1 and 3 weeks and 1.5-6 months after primary (n = 501) or revision surgeries (n = 153) and correlated to time, laser energy, frequency, surgical technique, and pathology encountered in revision stapedotomy. In both time periods, most patients showed a lower bone-conduction threshold in the four-tone puretone average (PTA) at frequencies of 0.5, 1, 2, and 3 kHz that further improved over time. Between 1 and 3 weeks, the improvement was significant in subgroups with cumulative energies lower 1 J and successful one-shot technique or in revisions without laser application. The remaining subgroups with higher total energies showed significant improvements between 1.5 and 6 months. At 4 and 8 kHz, significant improvements were found during 1.5-6 months after primary and revision surgery independent of the used energy. Repeated CO 2 laser applications showed no impairment in bone-conduction thresholds and can thus be considered as safe. In most patients, significant, yet unexplained, improvements in bone-conduction hearing thresholds were noticed in a time- and energy-related pattern.

Optical Thin Film Coating Having High Damage Resistance in Near-Stoichiometric MgO-Doped LiTaO3

NASA Astrophysics Data System (ADS)

Tateno, Ryo; Kashiwagi, Kunihiro

2008-08-01

Currently, High power and compact red, green, and blue (RGB) lasers are being considered for use in large screen laser televisions and reception-lobby projectors. Among these three laser sources, green semiconductor lasers are expensive and exhibit inferior performance in terms of the semiconductor material used, making it difficult to achieve a high output. In this study, we examined the use of our coating on MgO-doped LiTaO3, using a mirror coated with a multilayer film. Over a substrate, a Ta2O5 film was used to coat a high-refractive-index film layer, and a SiO2 film was used to coat a low-refractive-index film layer. To improve reflectivity, we designed the peak of the electric field intensity to be in the film layer with the low refractive index. As a result, the film endurance of 100 J/cm2 was obtained by one-on-one testing. With the nonlinear crystal material, the mirror without our coating exhibited a damage threshold of 33 J/cm2; however, after coating, this mirror demonstrated a higher damage threshold of 47 J/cm2. Thus, the film we fabricated using this technique is useful for improving the strength and durability of laser mirrors.

Investigation of ultrashort pulse laser ablation of the cornea and hydrogels for eye microsurgery

NASA Astrophysics Data System (ADS)

Girard, Guillaume; Zhou, Sheng; Bigaouette, Nicolas; Brunette, Isabelle; Chaker, Mohamed; Germain, Lucie; Lavertu, Pierre-Luc; Martin, François; Olivié, Gilles; Ozaki, Tsuneyuki; Parent, Mireille; Vidal, François; Kieffer, Jean-Claude

2004-10-01

The Femtosecond laser is a very promising tool for performing accurate dissection in various cornea layers. Clearly, the development of this application requires basic knowledge about laser-tissue interaction. One of the most significant parameter in laser applications is the ablation threshold, defined as the minimal laser energy per unit surface required for ablation. This paper investigates the ablation threshold as a function of the laser pulse duration for two corneal layers (endothelium and epithelium) as well as for hydrogel with different hydration degrees. The measured ablation thresholds prove to behave very differently as a function of the pulse duration for the various materials investigated, although the values obtained for the shortest laser pulses are quite similar. Our experimental results are fitted with a simple model for laser-matter interaction in order to determine some intrinsic physical parameters characterizing each target.

Estimation of ultrashort laser irradiation effect over thin transparent biopolymer films morphology

NASA Astrophysics Data System (ADS)

Daskalova, A.; Nathala, C.; Bliznakova, I.; Slavov, D.; Husinsky, W.

2015-01-01

The collagen - elastin biopolymer thin films treated by CPA Ti:Sapphire laser (Femtopower - Compact Pro) at 800nm central wavelength with 30fs and 1kHz repetition rate are investigated. A process of surface modifications and microporous scaffold creation after ultrashort laser irradiation has been observed. The single-shot (N=1) and multi-shot (N<1) ablation threshold values were estimated by studying the linear relationship between the square of the crater diameter D2 and the logarithm of the laser fluence F for determination of the threshold fluences for N=1, 2, 5, 10, 15 and 30 number of laser pulses. The incubation analysis by calculation of the incubation coefficient ξ for multi - shot fluence threshold for selected materials by power - law relationship form Fth(N)=Fth(1)Nξ-1 was also obtained. In this paper, we have also shown another consideration of the multi - shot ablation threshold calculation by logarithmic dependence of the ablation rate d on the laser fluence. The morphological surface changes of the modified regions were characterized by scanning electron microscopy to estimate the generated variations after the laser treatment.

Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Botez, D.

1982-01-01

Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

Demonstration of enhanced side-mode suppression in metal-filled photonic crystal vertical cavity lasers.

PubMed

Griffin, Benjamin G; Arbabi, Amir; Peun Tan, Meng; Kasten, Ansas M; Choquette, Kent D; Goddard, Lynford L

2013-06-01

Previously reported simulations have suggested that depositing thin layers of metal over the surface of a single-mode, etched air hole photonic crystal (PhC) vertical-cavity surface-emitting laser (VCSEL) could potentially improve the laser's side-mode suppression ratio by introducing additional losses to the higher-order modes. This work demonstrates the concept by presenting the results of a 30 nm thin film of Cr deposited on the surface of an implant-confined PhC VCSEL. Both experimental measurements and simulation results are in agreement showing that the single-mode operation is improved at the same injection current ratio relative to threshold.

Spoof plasmon waveguide enabled ultrathin room temperature THz GaN quantum cascade laser: a feasibility study.

PubMed

Sun, Greg; Khurgin, Jacob B; Tsai, Din Ping

2013-11-18

We propose and study the feasibility of a THz GaN/AlGaN quantum cascade laser (QCL) consisting of only five periods with confinement provided by a spoof surface plasmon (SSP) waveguide for room temperature operation. The QCL design takes advantages of the large optical phonon energy and the ultrafast phonon scattering in GaN that allow for engineering favorable laser state lifetimes. Our analysis has shown that the waveguide loss is sufficiently low for the QCL to reach its threshold at the injection current density around 6 kA/cm2 at room temperature.

Molecular-beam epitaxy of 7-8 μm range quantum-cascade laser heterostructures

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Denisov, D. V.; Filimonov, A. V.; Nevedomsky, V. N.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Sokolovskii, G. S.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu

2017-11-01

The method of molecular beam epitaxy demonstrates the possibility to create high quality heterostructures of quantum cascade lasers in a spectral range of 7-8 μm containing 50 quantum cascades in an active region. Design based on the principle of two-phonon resonant scattering is used. X-ray diffraction and transmission electron microscopy experiments confirm high structural properties of the created heterostructures, e.g. the identity of the composition and thickness of epitaxial layers in all 50 cascades. Edge-emitting lasers based on the grown heterostructure demonstrate lasing with threshold current density of 2.8 kA/cm2 at a temperature of 78 K.

Modelling single shot damage thresholds of multilayer optics for high-intensity short-wavelength radiation sources.

PubMed

Loch, R A; Sobierajski, R; Louis, E; Bosgra, J; Bijkerk, F

2012-12-17

The single shot damage thresholds of multilayer optics for high-intensity short-wavelength radiation sources are theoretically investigated, using a model developed on the basis of experimental data obtained at the FLASH and LCLS free electron lasers. We compare the radiation hardness of commonly used multilayer optics and propose new material combinations selected for a high damage threshold. Our study demonstrates that the damage thresholds of multilayer optics can vary over a large range of incidence fluences and can be as high as several hundreds of mJ/cm(2). This strongly suggests that multilayer mirrors are serious candidates for damage resistant optics. Especially, multilayer optics based on Li(2)O spacers are very promising for use in current and future short-wavelength radiation sources.

Image intensifier gain uniformity improvements in sealed tubes by selective scrubbing

DOEpatents

Thomas, S.W.

1995-04-18

The gain uniformity of sealed microchannel plate image intensifiers (MCPIs) is improved by selectively scrubbing the high gain sections with a controlled bright light source. Using the premise that ions returning to the cathode from the microchannel plate (MCP) damage the cathode and reduce its sensitivity, a HeNe laser beam light source is raster scanned across the cathode of a microchannel plate image intensifier (MCPI) tube. Cathode current is monitored and when it exceeds a preset threshold, the sweep rate is decreased 1000 times, giving 1000 times the exposure to cathode areas with sensitivity greater than the threshold. The threshold is set at the cathode current corresponding to the lowest sensitivity in the active cathode area so that sensitivity of the entire cathode is reduced to this level. This process reduces tube gain by between 10% and 30% in the high gain areas while gain reduction in low gain areas is negligible. 4 figs.

Image intensifier gain uniformity improvements in sealed tubes by selective scrubbing

DOEpatents

Thomas, Stanley W.

1995-01-01

The gain uniformity of sealed microchannel plate image intensifiers (MCPIs) is improved by selectively scrubbing the high gain sections with a controlled bright light source. Using the premise that ions returning to the cathode from the microchannel plate (MCP) damage the cathode and reduce its sensitivity, a HeNe laser beam light source is raster scanned across the cathode of a microchannel plate image intensifier (MCPI) tube. Cathode current is monitored and when it exceeds a preset threshold, the sweep rate is decreased 1000 times, giving 1000 times the exposure to cathode areas with sensitivity greater than the threshold. The threshold is set at the cathode current corresponding to the lowest sensitivity in the active cathode area so that sensitivity of the entire cathode is reduced to this level. This process reduces tube gain by between 10% and 30% in the high gain areas while gain reduction in low gain areas is negligible.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

NASA Astrophysics Data System (ADS)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Spatial Distribution of the Threshold Beam Spots of Laser Weapons Simulators

DTIC Science & Technology

1993-09-08

This paper was based on the transmission theory of elliptical Gaussian beam fluxes in deriving some transmission equations for the threshold beam...spots of laser weapon simulators, in order to revise and expand the expressions for the threshold beam spots, their maximum range, the extinction

Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment

DOEpatents

Swain, J.E.; Stokowski, S.E.; Milam, D.; Kennedy, G.C.; Rainer, F.

1982-07-07

The bulk optical damage threshold fluence of potassium dihydrogen phosphate (KDP) crystals is increased by irradiating the crystals with laser pulses of duration 1 to 20 nanoseconds of increasing fluence, below the optical damage threshold fluence for untreated crystals, or by baking the crystals for times of the order of 24 hours at temperatures of 110 to 165/sup 0/C, or by a combination of laser irradiation and baking.

Retinal injury from simultaneous exposure to 532-nm and 860-nm laser irradiation

NASA Astrophysics Data System (ADS)

Schuster, Kurt; Roach, William P.; Polhamus, Garrett; Notabartolo, John; DiCarlo, Cheryl; Stockton, Kevin; Stolarski, David; Carothers, Val; Rockwell, Benjamin A.; Cain, Clarence

2004-07-01

To properly assess the retinal hazards from several lasers using multiple wavelengths, the retinal effects of 10-second laser irradiation from 532 and 860 nm were determined in non-human primates for several different power combinations of these wavelengths. A total of 12 eyes were exposed using four different ratios of power levels to determine the contribution to the damage levels from each wavelength. The data are compared to the calculations resulting from use of the currently accepted method of predicting hazards from simultaneous laser. The ANSI-Z136 - 2000 standard was used to calculate the combined maximum permissible exposure (MPE) and for comparison with the measured visible lesion thresholds, i.e., ED50s.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Liquid phase epitaxial growth of GaInAsP/InP laser structures

NASA Astrophysics Data System (ADS)

Nohavica, D.; Têminová, J.; Berková, D.; Zagrádková, M.; Kortan, I.; Zelinka, I.; Walachová, I.; Malina, V.

1988-11-01

A modified single-phase liquid phase epitaxy method was developed on the basis of a novel variant of the growth boat. The method was used to grow GaInAsP/InP double heterostructures for lasers emitting at 1.3 and 1.55 μm. The main properties of wide-contact diodes (radiation power and threshold current density) were adopted as the characteristics of the quality of heterostructures characterized by different configurations of active and guiding layers. The quality of the structure was confirmed by the fabrication of laser diodes of the following types: stripe with oxide insulation, clad-ridge waveguide, and double-channel planar buried.

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

NASA Astrophysics Data System (ADS)

Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

2018-04-01

In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

1.9 THz Quantum-cascade Lasers with One-well Injector

NASA Technical Reports Server (NTRS)

Kumar, Sushil; Williams, Benjamin S.; Hu, Qing; Reno, John L.

2006-01-01

We report terahertz quantum-cascade lasers operating predominantly at 1.90 THz with side modes as low as 1.86 THz (lambda approx. equal to 161 micrometers, planck's constant omega approx. equal to 7.7 meV). This is the longest wavelength to date of any solid-state laser that operates without assistance of a magnetic field. Carriers are injected into the upper radiative state by using a single quantum-well injector, which resulted in a significant reduction of free-carrier losses. The laser operated up to a heat-sink temperature of 110 K in pulsed mode, 95 K in continuous wave (cw) mode, and the threshold current density at 5 K was approx. 140 A per square centimeters.

Low threshold CW Nc laser oscillator at 1060 nm study

NASA Technical Reports Server (NTRS)

Birnbaum, M.; Deshazer, L. G.

1976-01-01

A broad range of characteristics of neodymium/yag lasers were investigated. With Nd:YVO4 crystals, CW 1.06 mu lasers were operated with thresholds a factor of 2 lower than Nd:YAG and with greater slope efficiencies. Thus, the first step in the development of new oscillators suitable for application in high data rate laser communication systems which surpass the present performance of the Nd:YAG laser has been successfully demonstrated.

Ridge-width dependence of the threshold of long wavelength (λ ≈ 14 µm) Quantum Cascade lasers with sloped and vertical sidewalls.

PubMed

Huang, Xue; Chiu, Yenting; Charles, William O; Gmachl, Claire

2012-01-30

We investigate the ridge-width dependence of the threshold of Quantum Cascade lasers fabricated by wet and dry etching, respectively. The sloped sidewalls resulting from wet etching affect the threshold in two ways as the ridge gets narrower. First, the transverse modes are deeper in the substrate, hence reducing the optical confinement factor. Second, more important, a non-negligible field exists in the lossy SiO2 insulation layer, as a result of transverse magnetic mode coupling to the surface plamon mode at the insulator/metal surface, which increases the waveguide loss. By contrast, dry etching is anisotropic and leads to waveguides with vertical sidewalls, which avoids the shift of the modes to the substrate layer and coupling to the surface plasmons, resulting in improved threshold compared with wet-etched lasers, e.g., for narrow ridge widths below 20 µm, the threshold of a 14 µm wide λ ≈ 14 µm laser by dry etching is ~60% lower than that of a wet-etched laser of the same width, at 80 K.

R-on-1 automatic mapping: A new tool for laser damage testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hue, J.; Garrec, P.; Dijon, J.

1996-12-31

Laser damage threshold measurement is statistical in nature. For a commercial qualification or for a user, the threshold determined by the weakest point is a satisfactory characterization. When a new coating is designed, threshold mapping is very useful. It enables the technology to be improved and followed more accurately. Different statistical parameters such as the minimum, maximum, average, and standard deviation of the damage threshold as well as spatial parameters such as the threshold uniformity of the coating can be determined. Therefore, in order to achieve a mapping, all the tested sites should give data. This is the major interestmore » of the R-on-1 test in spite of the fact that the laser damage threshold obtained by this method may be different from the 1-on-1 test (smaller or greater). Moreover, on the damage laser test facility, the beam size is smaller (diameters of a few hundred micrometers) than the characteristic sizes of the components in use (diameters of several centimeters up to one meter). Hence, a laser damage threshold mapping appears very interesting, especially for applications linked to large optical components like the Megajoule project or the National Ignition Facility (N.I.F). On the test bench used, damage detection with a Nomarski microscope and scattered light measurement are almost equivalent. Therefore, it becomes possible to automatically detect on line the first defects induced by YAG irradiation. Scattered light mappings and laser damage threshold mappings can therefore be achieved using a X-Y automatic stage (where the test sample is located). The major difficulties due to the automatic capabilities are shown. These characterizations are illustrated at 355 nm. The numerous experiments performed show different kinds of scattering curves, which are discussed in relation with the damage mechanisms.« less

Surface ablation of aluminum and silicon by ultrashort laser pulses of variable width

NASA Astrophysics Data System (ADS)

Zayarny, D. A.; Ionin, A. A.; Kudryashov, S. I.; Makarov, S. V.; Kuchmizhak, A. A.; Vitrik, O. B.; Kulchin, Yu. N.

2016-06-01

Single-shot thresholds of surface ablation of aluminum and silicon via spallative ablation by infrared (IR) and visible ultrashort laser pulses of variable width τlas (0.2-12 ps) have been measured by optical microscopy. For increasing laser pulse width τlas < 3 ps, a drastic (threefold) drop of the ablation threshold of aluminum has been observed for visible pulses compared to an almost negligible threshold variation for IR pulses. In contrast, the ablation threshold in silicon increases threefold with increasing τlas for IR pulses, while the corresponding thresholds for visible pulses remained almost constant. In aluminum, such a width-dependent decrease in ablation thresholds has been related to strongly diminished temperature gradients for pulse widths exceeding the characteristic electron-phonon thermalization time. In silicon, the observed increase in ablation thresholds has been ascribed to two-photon IR excitation, while in the visible range linear absorption of the material results in almost constant thresholds.

Dopamine sensing and measurement using threshold and spectral measurements in random lasers.

PubMed

Wan Ismail, Wan Zakiah; Liu, Guozhen; Zhang, Kai; Goldys, Ewa M; Dawes, Judith M

2016-01-25

We developed a novel dopamine sensing and measurement technique based on aggregation of gold nanoparticles in random lasers. Dopamine combined with copper ions triggers the aggregation of gold nanoparticles and thus affects the performance of random lasers. Dopamine sensing can be achieved using four parameters which are sensitive to the presence of dopamine, that is emission peak shift, emission linewidth, signal-to-noise ratio (peak emission intensity / noise) and random lasing threshold. The dopamine is most sensitively detected by a change in the emission linewidth with a limit of detection of 1 × 10(-7) M, as well as by an increase in the lasing threshold. The dopamine concentration from 1 × 10(-7) M to 1 × 10(-2) M can be determined by calibrating with the laser threshold.

Determination of Cross-Sectional Area of Focused Picosecond Gaussian Laser Beam

NASA Technical Reports Server (NTRS)

Ledesma, Rodolfo; Fitz-Gerald, James; Palmieri, Frank; Connell, John

2018-01-01

Measurement of the waist diameter of a focused Gaussian-beam at the 1/e(sup 2) intensity, also referred to as spot size, is key to determining the fluence in laser processing experiments. Spot size measurements are also helpful to calculate the threshold energy and threshold fluence of a given material. This work reports an application of a conventional method, by analyzing single laser ablated spots for different laser pulse energies, to determine the cross-sectional area of a focused Gaussian-beam, which has a nominal pulse width of approx. 10 ps. Polished tungsten was used as the target material, due to its low surface roughness and low ablation threshold, to measure the beam waist diameter. From the ablative spot measurements, the ablation threshold fluence of the tungsten substrate was also calculated.

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

NASA Astrophysics Data System (ADS)

Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

2018-02-01

The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u}more » is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.« less

Effect of QW thickness and numbers on performance characteristics of deep violet InGaN MQW lasers

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Amirhoseiny, M.; Hassan, Z.

2015-03-01

The performance characteristics of deep violet indium gallium nitride (InGaN) multiquantum well (MQW) laser diodes (LDs) with an emission wavelength of around 390 nm have been investigated using the integrated system engineering technical computer aided design (ISE-TCAD) software. A comparative study on the effect of quantum well (QW) thickness and number on electrical and optical performance of deep violet In0.082Ga0.918N/GaN MQW LDs have been carried out. The simulation results showed that the highest slope efficiency and external differential quantum efficiency (DQE), as well as the lowest threshold current are obtained when the number of wells is two. The different QW thickness values of 2.2, 2.5, 2.8, 3 and 3.2 nm were compared and the best results were achieved for 2.5 nm QW thickness. The radiative recombination rate decreases with increasing QW thickness because of decreasing electron and hole carrier densities in wells. By increasing QW thickness, output power decreases and threshold current increases.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kafka, Kyle R. P.; Hoffman, Brittany N.; Papernov, Semyon

The laser-induced damage threshold of fused-silica samples processed via magnetorheological finishing is investigated for polishing compounds depending on the type of abrasive material and the post-polishing surface roughness. The effectiveness of laser conditioning is examined using a ramped pre-exposure with the same 351-nm, 3-ns Gaussian pulses. Lastly, we examine chemical etching of the surface and correlate the resulting damage threshold to the etching protocol. A combination of etching and laser conditioning is found to improve the damage threshold by a factor of ~3, while maintaining <1-nm surface roughness.

Thermal bistability-based method for real-time optimization of ultralow-threshold whispering gallery mode microlasers.

PubMed

Lin, Guoping; Candela, Y; Tillement, O; Cai, Zhiping; Lefèvre-Seguin, V; Hare, J

2012-12-15

A method based on thermal bistability for ultralow-threshold microlaser optimization is demonstrated. When sweeping the pump laser frequency across a pump resonance, the dynamic thermal bistability slows down the power variation. The resulting line shape modification enables a real-time monitoring of the laser characteristic. We demonstrate this method for a functionalized microsphere exhibiting a submicrowatt laser threshold. This approach is confirmed by comparing the results with a step-by-step recording in quasi-static thermal conditions.

Vertical-cavity surface-emitting lasers come of age

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.

1996-04-01

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Low amplified spontaneous emission threshold and suppression of electroluminescence efficiency roll-off in layers doped with ter(9,9'-spirobifluorene)

NASA Astrophysics Data System (ADS)

Inoue, Munetomo; Matsushima, Toshinori; Adachi, Chihaya

2016-03-01

We demonstrate that ter(9,9'-spirobifluorene) (TSBF) doped in a host matrix layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) shows a low amplified spontaneous emission (ASE) threshold (Eth = 1.0 μJ cm-2) and suppressed electroluminescence efficiency roll-off at high current densities (no roll-off up to 100 mA cm-2). One origin of the low ASE threshold is that the TSBF-doped CBP layer possesses a very large radiative decay constant (kr = 1.1 × 109 s-1). Singlet-triplet annihilation is almost suppressed in the TSBF-doped CBP layer, which can be ascribed to the small overlap between the emission and triplet absorption of TSBF. Also, the small energy level difference between TSBF and CBP minimizes carrier trapping in TSBF, leading to the suppression of singlet-polaron annihilation. TSBF showed one of the lowest Eth and the most suppressed efficiency roll-off among organic laser dyes investigated in this study and, therefore, is believed to be a promising candidate to realize electrically pumped organic semiconductor laser diodes in the future.

Qualification of quantum cascade lasers for space environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myers, Tanya L.; Cannon, Bret D.; Brauer, Carolyn S.

2014-06-11

Laser-based instruments are enabling a new generation of scientific instruments for space environments such as those used in the exploration of Mars. The lasers must be robust and able to withstand the harsh environment of space, including radiation exposure. Quantum cascade lasers (QCLs), which are semiconductor lasers that emit in the infrared spectral region, offer the potential for the development of novel laser-based instruments for space applications. The performance of QCLs after radiation exposure, however, has not been reported. We report on work to quantify the performance of QCLs after exposure to two different radiation sources, 64 MeV protons andmore » Cobalt-60 gamma rays, at radiation levels likely to be encountered during a typical space flight mission. No significant degradation in threshold current or slope efficiency is observed for any of the seven Fabry-Perot QCLs that are tested.« less

Reliability improvements in tunable Pb1-xSnxSe diode lasers

NASA Technical Reports Server (NTRS)

Linden, K. J.; Butler, J. F.; Nill, K. W.; Reeder, R. E.

1980-01-01

Recent developments in the technology of Pb-salt diode lasers which have led to significant improvements in reliability and lifetime, and to improved operation at very long wavelengths are described. A combination of packaging and contacting-metallurgy improvements has led to diode lasers that are stable both in terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 77 K and 300 K have exhibited no measurable changes in either electrical contact resistance or threshold current. Utilizing metallurgical contacting process, both lasers and experimental n-type and p-type bulk materials are shown to have electrical contact resistance values that are stable for shelf storage periods well in excess of one year. Problems and experiments which have led to devices with improved performance stability are discussed. Stable device configurations achieved for material compositions yielding lasers which operate continuously at wavelengths as long as 30.3 micrometers are described.

Tunable femtosecond lasers with low pump thresholds

NASA Astrophysics Data System (ADS)

Oppo, Karen

The work in this thesis is concerned with the development of tunable, femtosecond laser systems, exhibiting low pump threshold powers. The main motive for this work was the development of a low threshold, self-modelocked Ti:Al2O3 laser in order to replace the conventional large-frame argon-ion pump laser with a more compact and efficient all-solid-state alternative. Results are also presented for an all-solid-state, self-modelocked Cr:LiSAF laser, however most of this work is concerned with self-modelocked Ti:Al2O3 laser systems. In chapter 2, the operation of a regeneratively-initiated, and a hard-aperture self- modelocked Ti:Al2O3 laser, pumped by an argon-ion laser, is discussed. Continuous- wave oscillation thresholds as low as 160mW have been demonstrated, along with self-modelocked threshold powers as low as 500mW. The measurement and suppression of phase noise on modelocked lasers is discussed in chapter 3. This is followed by a comparison of the phase noise characteristics of the regeneratively-initiated, and hard-aperture self-modelocked Ti:Al2O3 lasers. The use of a synchronously-operating, high resolution electron-optical streak camera in the evaluation of timing jitter is also presented. In chapter 4, the construction and self-modelocked operation of an all-solid-state Ti:Al2O3 laser is described. The all-solid-state alternative to the conventional argon-ion pump laser was a continuous-wave, intracavity-frequency doubled, diode-laser pumped Nd:YLF ring laser. At a total diode-laser pump power of 10W, this minilaser was capable of producing a single frequency output of 1W, at 523.5nm in a TEM00 beam. The remainder of this thesis looks at the operation of a self-modelocked Ti:Al2O3 laser generating ultrashort pulses at wavelengths as long as 1053nm. The motive for this work was the development of an all-solid-state, self- modelocked Ti:Al2O3 laser operating at 1053nm, for use as a master oscillator in a Nd:glass power chain.

Influence of pre-annealing of printed silver electrodes on ultrafast laser ablation of short thin-film transistor channels on flexible substrates

NASA Astrophysics Data System (ADS)

Wiig, M. S.; You, C. C.; Brox-Nilsen, C.; Foss, S. E.

2018-02-01

The cutoff frequency and current from an organic thin-film transistor (OTFT) are strongly dependent on the length and to some extent on the uniformity of the transistor channel. Reducing the channel length can improve the OTFT performance with the increase in the current and frequency. Picosecond laser ablation of the printed Ag electrodes, compatible with roll-to-roll fabrication, has been investigated. The ablation threshold was found to be similar for the laser wavelengths tested: 515 nm and 1030 nm. Short transistor channels could be opened both after light annealing at 70 °C and after annealing at 140 °C. The channels in the lightly cured films had a significantly less scale formation, which is critical for avoiding shunts in the device. By moving from bottom electrodes fully defined by printing to the bottom electrodes where the transistor channel is opened by the laser, the channel length could be reduced from 40 μm to less than 5 μm.

Photoemission experiments of a large area scandate dispenser cathode

NASA Astrophysics Data System (ADS)

Zhang, Huang; Liu, Xing-guang; Chen, Yi; Chen, De-biao; Jiang, Xiao-guo; Yang, An-min; Xia, Lian-sheng; Zhang, Kai-zhi; Shi, Jin-shui; Zhang, Lin-wen

2010-09-01

A 100-mm-diameter scandate dispenser cathode was tested as a photocathode with a 10 ns Nd:YAG laser (266 nm) on an injector test stand for linear induction accelerators. This thermionic dispenser cathode worked at temperatures ranging from room temperature to 930 °C (below or near the thermionic emission threshold) while the vacuum was better than 4×10 -7 Torr. The laser pulse was synchronized with a 120 ns diode voltage pulse stably and they were in single pulse mode. Emission currents were measured by a Faraday cup. The maximum peak current collected at the anode was about 100 A. The maximum quantum efficiency measured at low laser power was 2.4×10 -4. Poisoning effect due to residual gas was obvious and uninterrupted heating was needed to keep cathode's emission capability. The cathode was exposed to air one time between experiments and recovered after being reconditioned. Photoemission uniformity of the cathode was also explored by changing the laser spot's position.

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.

2015-02-16

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injectedmore » photons.« less

Ultralow-threshold Kerr-lens mode-locked Ti:Al(2)O(3) laser.

PubMed

Kowalevicz, A M; Schibli, T R; Kärtner, F X; Fujimoto, J G

2002-11-15

An ultralow-threshold Kerr-lens mode-locked Ti:Al(2)O(3) laser achieved by use of an extended cavity design is demonstrated. Mode-locking thresholds as low as 156 mW are achieved. Pulses with durations as short as 14 fs and bandwidths of >100 nm with output powers of ~15 mW at 50-MHz repetition rates are generated by only 200 mW of pump power. Reducing the pump power requirements to a factor of 10x less than required by most conventional Kerr-lens mode-locked lasers permits inexpensive, low-power pump lasers to be used. This will facilitate the development of low-cost, high-performance femtosecond Ti:Al(2)O(3) laser technology.

Laser antisepsis of Phorphyromonas gingivalis in vitro with dental lasers

NASA Astrophysics Data System (ADS)

Harris, David M.

2004-05-01

It has been shown that both pulsed Nd:YAG (1064nm) and continuous diode (810nm) dental lasers kill pathogenic bacteria (laser antisepsis), but a quantitative method for determining clinical dosimetry does not exist. The purpose of this study was to develop a method to quantify the efficacy of ablation of Porphyromonas gingivalis (Pg) in vitro for two different lasers. The ablation thresholds for the two lasers were compared in the following manner. The energy density was measured as a function of distance from the output of the fiber-optic delivery system. Pg cultures were grown on blood agar plates under standard anaerobic conditions. Blood agar provides an approximation of gingival tissue for the wavelengths tested in having hemoglobin as a primary absorber. Single pulses (Nd:YAG: 100- Œs diode: 100-msec) of laser energy were delivered to Pg colonies and the energy density was increased until the appearance of a small plume was observed coincident with a laser pulse. The energy density at this point defines the ablation threshold. Ablation thresholds to a single pulse were determined for both Pg and for blood agar alone. The large difference in ablation thresholds between the pigmented pathogen and the host matrix for pulsed-Nd:YAG represented a significant therapeutic ratio and Pg was ablated without visible effect on the blood agar. Near threshold the 810-nm diode laser destroyed both the pathogen and the gel. Clinically, the pulsed Nd:YAG may selectively destroy pigmented pathogens leaving the surrounding tissue intact. The 810-nm diode laser may not demonstrate this selectivity due to its longer pulse length and greater absorption by hemoglobin.

Properties of the surface generation-recombination noise in 1.94 μm GaSb-based laser diodes

NASA Astrophysics Data System (ADS)

Glemža, Justinas; Palenskis, Vilius; Pralgauskaitė, Sandra; Vyšniauskas, Juozas; Matukas, Jonas

2018-06-01

A detail investigation of generation-recombination (g-r) noise in 1.94 μm GaSb-based type-I ridge waveguide laser diodes (LDs) has been performed in a temperature range (230-295) K. Lorentzian-type noise spectra have been observed in the current range below the threshold at the forward and reverse biases of the LDs with the same characteristic time (3.7 μs) and activation energy (≈0.37 eV) of charge carriers transitions associated with the g-r processes. An equivalent electrical circuit possessing the voltage noise source is presented, which allows the description of both the current-voltage characteristic and the voltage fluctuation spectral density of the laser diode. Results indicate that the origin of the g-r noise in the investigated samples is the surface recombination caused by the surface leakage current channel between n+GaSb and p+GaSb contacts, which is practically independent from the applied bias polarity.

Laser materials for the 0.67-microns to 2.5-microns range

NASA Technical Reports Server (NTRS)

Toda, Minoru; Zamerowski, Thomas J.; Ladany, Ivan; Martinelli, Ramon U.

1987-01-01

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

A very sensitive ion collection device for plasma-laser characterization.

PubMed

Cavallaro, S; Torrisi, L; Cutroneo, M; Amato, A; Sarta, F; Wen, L

2012-06-01

In this paper a very sensitive ion collection device, for diagnostic of laser ablated-target plasma, is described. It allows for reducing down to few microvolts the signal threshold at digital scope input. A standard ion collector is coupled to a transimpedance amplifier, specially designed, which increases data acquisition sensitivity by a gain ≈1100 and does not introduce any significant distortion of input signal. By time integration of current intensity, an amount of charge as small as 2.7 × 10(-2) pC can be detected for photopeak events.

THz quantum cascade lasers with wafer bonded active regions.

PubMed

Brandstetter, M; Deutsch, C; Benz, A; Cole, G D; Detz, H; Andrews, A M; Schrenk, W; Strasser, G; Unterrainer, K

2012-10-08

We demonstrate terahertz quantum-cascade lasers with a 30 μm thick double-metal waveguide, which are fabricated by stacking two 15 μm thick active regions using a wafer bonding process. By increasing the active region thickness more optical power is generated inside the cavity, the waveguide losses are decreased and the far-field is improved due to a larger facet aperture. In this way the output power is increased by significantly more than a factor of 2 without reducing the maximum operating temperature and without increasing the threshold current.

Proton and gamma irradiation of Fabry-Perot quantum cascade lasers for space qualification

DOE PAGES

Myers, Tanya L.; Cannon, Bret D.; Brauer, Carolyn S.; ...

2015-01-20

Fabry-Perot quantum cascade lasers (QCLs) were characterized following irradiation by high energy (64 MeV) protons and Cobalt-60 gamma rays. Seven QCLs were exposed to radiation dosages that are typical for a space mission in which the total accumulated dosages from both radiation sources varied from 20 krad(Si) to 46.3 krad(Si). In conclusion, the QCLs did not show any measurable changes in threshold current or slope efficiency suggesting the suitability of QCLs for use in space-based missions.

EFFECTS OF LASER RADIATION ON MATTER: Influence of fluctuations of the size and number of surface microdefects on the thresholds of laser plasma formation

NASA Astrophysics Data System (ADS)

Borets-Pervak, I. Yu; Vorob'ev, V. S.

1990-08-01

An analysis is made of the influence of the statistical scatter of the size of thermally insulated microdefects and of their number in the focusing spot on the threshold energies of plasma formation by microsecond laser pulses interacting with metal surfaces. The coordinates of the laser pulse intensity and the surface density of the laser energy are used in constructing plasma formation regions corresponding to different numbers of microdefects within the focusing spot area; the same coordinates are used to represent laser pulses. Various threshold and nonthreshold plasma formation mechanisms are discussed. The sizes of microdefects and their statistical characteristics deduced from limited experimental data provide a consistent description of the characteristics of plasma formation near polished and nonpolished surfaces.

Pilot study about dose-effect relationship of ocular injury in argon laser photocoagulation

NASA Astrophysics Data System (ADS)

Chen, P.; Zhang, C. P.; Fu, X. B.; Zhang, T. M.; Wang, C. Z.; Qian, H. W.; San, Q.

2011-03-01

The aim of this article was to study the injury effect of either convergent or parallel argon laser beam on rabbit retina, get the dose-effect relationship for the two types of laser beams, and calculate the damage threshold of argon laser for human retinas. An argon laser therapeutic instrument for ophthalmology was used in this study. A total of 80 rabbit eyes were irradiated for 600 lesions, half of which were treated by convergent laser and the other half were done with parallel laser beam. After irradiation, slit lamp microscope and fundus photography were used to observe the lesions, change and the incidence of injury was processed statistically to get the damage threshold of rabbit retina. Based on results from the experiments on animals and the data from clinical cases of laser treatment, the photocoagulation damage thresholds of human retinas for convergent and parallel argon laser were calculated to be 0.464 and 0.285 mJ respectively. These data provided biological reference for safely operation when employing laser photocoagulation in clinical practice and other fields.

Porcine skin visible lesion thresholds for near-infrared lasers including modeling at two pulse durations and spot sizes.

PubMed

Cain, C P; Polhamus, G D; Roach, W P; Stolarski, D J; Schuster, K J; Stockton, K L; Rockwell, B A; Chen, Bo; Welch, A J

2006-01-01

With the advent of such systems as the airborne laser and advanced tactical laser, high-energy lasers that use 1315-nm wavelengths in the near-infrared band will soon present a new laser safety challenge to armed forces and civilian populations. Experiments in nonhuman primates using this wavelength have demonstrated a range of ocular injuries, including corneal, lenticular, and retinal lesions as a function of pulse duration. American National Standards Institute (ANSI) laser safety standards have traditionally been based on experimental data, and there is scant data for this wavelength. We are reporting minimum visible lesion (MVL) threshold measurements using a porcine skin model for two different pulse durations and spot sizes for this wavelength. We also compare our measurements to results from our model based on the heat transfer equation and rate process equation, together with actual temperature measurements on the skin surface using a high-speed infrared camera. Our MVL-ED50 thresholds for long pulses (350 micros) at 24-h postexposure are measured to be 99 and 83 J cm(-2) for spot sizes of 0.7 and 1.3 mm diam, respectively. Q-switched laser pulses of 50 ns have a lower threshold of 11 J cm(-2) for a 5-mm-diam top-hat laser pulse.

Fractal dendrite-based electrically conductive composites for laser-scribed flexible circuits

PubMed Central

Yang, Cheng; Cui, Xiaoya; Zhang, Zhexu; Chiang, Sum Wai; Lin, Wei; Duan, Huan; Li, Jia; Kang, Feiyu; Wong, Ching-Ping

2015-01-01

Fractal metallic dendrites have been drawing more attentions recently, yet they have rarely been explored in electronic printing or packaging applications because of the great challenges in large-scale synthesis and limited understanding in such applications. Here we demonstrate a controllable synthesis of fractal Ag micro-dendrites at the hundred-gram scale. When used as the fillers for isotropically electrically conductive composites (ECCs), the unique three-dimensional fractal geometrical configuration and low-temperature sintering characteristic render the Ag micro dendrites with an ultra-low electrical percolation threshold of 0.97 vol% (8 wt%). The ultra-low percolation threshold and self-limited fusing ability may address some critical challenges in current interconnect technology for microelectronics. For example, only half of the laser-scribe energy is needed to pattern fine circuit lines printed using the present ECCs, showing great potential for wiring ultrathin circuits for high performance flexible electronics. PMID:26333352

Electroluminescence of ZnO-based semiconductor heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya

2011-01-31

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

Laser pulse transmission and damage threshold of silica fibers with antireflective coatings

NASA Astrophysics Data System (ADS)

Meister, Stefan; Wosniok, Alexander; Riesbeck, Thomas; Scharfenorth, Chris; Eichler, Hans J.

2005-03-01

Standard 200 μm multimode fibers with Ta2O5/SiO2 antireflective coatings reach a transmission of more than 99.5% below the threshold of stimulated Brillouin scattering. The laser-induced damage threshold measured at 1064 nm and 24 ns pulse duration was about half than the LIDT of uncoated fibers.

Study of gain-coupled distributed feedback laser based on high order surface gain-coupled gratings

NASA Astrophysics Data System (ADS)

Gao, Feng; Qin, Li; Chen, Yongyi; Jia, Peng; Chen, Chao; Cheng, LiWen; Chen, Hong; Liang, Lei; Zeng, Yugang; Zhang, Xing; Wu, Hao; Ning, Yongqiang; Wang, Lijun

2018-03-01

Single-longitudinal-mode, gain-coupled distributed feedback (DFB) lasers based on high order surface gain-coupled gratings are achieved. Periodic surface metal p-contacts with insulated grooves realize gain-coupled mechanism. To enhance gain contrast in the quantum wells without the introduction of effective index-coupled effect, groove length and depth were well designed. Our devices provided a single longitudinal mode with the maximum CW output power up to 48.8 mW/facet at 971.31 nm at 250 mA without facet coating, 3dB linewidth (<3.2 pm) and SMSR (>39 dB). Optical bistable characteristic was observed with a threshold current difference. Experimentally, devices with different cavity lengths were contrasted on power-current and spectrum characteristics. Due to easy fabrication technique and stable performance, it provides a method of fabricating practical gain-coupled distributed feedback lasers for commercial applications.

1.55 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme.

PubMed

Cheng, Yuanbing; Wang, Qi Jie; Pan, Jiaoqing

2014-12-15

We demonstrate a cost-effective 1.55 µm low chirp 4 × 25 Gbit/s electroabsorption modulated laser (EML) array with 0.8 nm channel spacing by varying ridge width of the lasers and using selective area growth (SAG) integration scheme. The devices for all the 4 channels within the EML array show uniform threshold currents around 18 mA and high SMSRs over 45 dB. The output optical power of each channel is about 9 mW at an injection current of 100 mA. The typical chirp value of single EML measured by a fiber resonance method varied from 2.2 to -4 as the bias voltage was increased from 0 V to 2.5 V. These results show that the EML array is a suitable light source for 100 Gbit/s optical transmissions.

Watt-level widely tunable single-mode emission by injection-locking of a multimode Fabry-Perot quantum cascade laser

NASA Astrophysics Data System (ADS)

Chevalier, Paul; Piccardo, Marco; Anand, Sajant; Mejia, Enrique A.; Wang, Yongrui; Mansuripur, Tobias S.; Xie, Feng; Lascola, Kevin; Belyanin, Alexey; Capasso, Federico

2018-02-01

Free-running Fabry-Perot lasers normally operate in a single-mode regime until the pumping current is increased beyond the single-mode instability threshold, above which they evolve into a multimode state. As a result of this instability, the single-mode operation of these lasers is typically constrained to few percents of their output power range, this being an undesired limitation in spectroscopy applications. In order to expand the span of single-mode operation, we use an optical injection seed generated by an external-cavity single-mode laser source to force the Fabry-Perot quantum cascade laser into a single-mode state in the high current range, where it would otherwise operate in a multimode regime. Utilizing this approach, we achieve single-mode emission at room temperature with a tuning range of 36 cm-1 and stable continuous-wave output power exceeding 1 W at 4.5 μm. Far-field measurements show that a single transverse mode is emitted up to the highest optical power, indicating that the beam properties of the seeded Fabry-Perot laser remain unchanged as compared to free-running operation.

Red laser based on intra-cavity Nd:YAG/CH4 frequency doubled Raman lasers

NASA Astrophysics Data System (ADS)

Wang, Yanchao; Wang, Pengyuan; Liu, Jinbo; Liu, Wanfa; Guo, Jingwei

2017-01-01

Stimulated Raman scattering (SRS) is a powerful tool for the extension of the spectral range of lasers. To obtain efficient Raman conversion in SRS, many researchers have studied different types of Raman laser configurations. Among these configurations, the intra-cavity type is particularly attractive. Intra-cavity SRS has the advantages of high intra-cavity laser intensity, low-SRS threshold, and high Raman conversion efficiency. In this paper, An Q-switched intra-cavity Nd: YAG/CH4 frequency-doubled Raman lasers is reported. A negative branch confocal resonator with M= 1.25 is used for the frequency-doubling of Nd: YAG laser. The consequent 532nm light is confined in intra- cavity SRS with travelling wave resonator, and the focal of one mirror of cavity is overlap with the center of the other mirror of the cavity. We found this design is especially efficient to reduce the threshold of SRS, and increase conversion efficiency. The threshold is measured to be 0.62 MW, and at the pump energy of 16.1 mJ, the conversion efficiency is 34%. With the smaller magnification M, the threshold could further decrease, and the conversion efficiency could be improved further. This is a successful try to extend the spectral range of a laser to the shorter wavelength by SRS, and this design may play an important role in the fulfillment of high power red lasers.

Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohtani, K.; Fujita, K.; Ohno, H.

2005-11-21

We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 {mu}m. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm{sup 2}, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.

Optical power equalization for upstream traffic with injection-locked Fabry-Perot lasers in TDM-PON

NASA Astrophysics Data System (ADS)

Huang, Ting-Tsan; Sheu, Lih-Gen; Chi, Sien

2010-10-01

An optical power equalization of upstream traffic in time-division-multiplexed passive optical network (TDM-PON) based on injection-locked Fabry-Perot lasers has been experimentally investigated. The upstream transmitters with stable spectrum are achieved by using an external injection light source in the optical line terminal (OLT). The different upstream powers can be equalized by injection locking a Fabry-Perot laser diode (FP-LD) biased below threshold current in OLT. The dynamic upstream power range from - 8.5 to - 19.5 db m is reduced to a 1.6 dB maximal power variation, when the uplink signal is directly modulated at 1.25 Gb/s.

Surface-plasmon distributed-feedback quantum cascade lasers operating pulsed, room temperature

NASA Astrophysics Data System (ADS)

Bousseksou, A.; Chassagneux, Y.; Coudevylle, J. R.; Colombelli, R.; Sirtori, C.; Patriarche, G.; Beaudoin, G.; Sagnes, I.

2009-08-01

We report distributed-feedback surface-plasmon quantum cascade lasers operating at λ ≈7.6μm. The distributed feedback is obtained by the sole patterning of the top metal contact on a surface plasmon waveguide. Single mode operation with more than 30dB side mode suppression ratio is obtained in pulsed mode and at room temperature. A careful experimental study confirms that by varying the grating duty cycle, one can reduce the waveguide losses with respect to standard, unpatterned surface-plasmon devices. This allows one to reduce the laser threshold current of more than a factor of 2 in the 200-300K temperature range. This approach may lead to a fabrication technology for midinfrared distributed-feedback lasers based on a very simple processing.

Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

NASA Astrophysics Data System (ADS)

Castellano, A.; Cerutti, L.; Rodriguez, J. B.; Narcy, G.; Garreau, A.; Lelarge, F.; Tournié, E.

2017-06-01

We report on electrically pumped GaSb-based laser diodes monolithically grown on Si and operating in a continuous wave (cw) in the telecom wavelength range. The laser structures were grown by molecular-beam epitaxy on 6°-off (001) substrates. The devices were processed in coplanar contact geometry. 100 μm × 1 mm laser diodes exhibited a threshold current density of 1 kA/cm-2 measured under pulsed operation at 20 °C. CW operation was achieved up to 35 °C with 10 μm × 1 mm diodes. The output power at 20 °C was around 3 mW/uncoated facet, and the cw emission wavelength 1.59 μm, in the C/L-band of telecom systems.

Effect of Repetition Rate on Femtosecond Laser-Induced Homogenous Microstructures

PubMed Central

Biswas, Sanchari; Karthikeyan, Adya; Kietzig, Anne-Marie

2016-01-01

We report on the effect of repetition rate on the formation and surface texture of the laser induced homogenous microstructures. Different microstructures were micromachined on copper (Cu) and titanium (Ti) using femtosecond pulses at 1 and 10 kHz. We studied the effect of the repetition rate on structure formation by comparing the threshold accumulated pulse (FΣpulse) values and the effect on the surface texture through lacunarity analysis. Machining both metals at low FΣpulse resulted in microstructures with higher lacunarity at 10 kHz compared to 1 kHz. On increasing FΣpulse, the microstructures showed higher lacunarity at 1 kHz. The effect of the repetition rate on the threshold FΣpulse values were, however, considerably different on the two metals. With an increase in repetition rate, we observed a decrease in the threshold FΣpulse on Cu, while on Ti we observed an increase. These differences were successfully allied to the respective material characteristics and the resulting melt dynamics. While machining Ti at 10 kHz, the melt layer induced by one laser pulse persists until the next pulse arrives, acting as a dielectric for the subsequent pulse, thereby increasing FΣpulse. However, on Cu, the melt layer quickly resolidifies and no such dielectric like phase is observed. Our study contributes to the current knowledge on the effect of the repetition rate as an irradiation parameter. PMID:28774143

Measurement of ablation threshold of oxide-film-coated aluminium nanoparticles irradiated by femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chefonov, O V; Ovchinnikov, A V; Il'ina, I V

We report the results of experiments on estimation of femtosecond laser threshold intensity at which nanoparticles are removed from the substrate surface. The studies are performed with nanoparticles obtained by femtosecond laser ablation of pure aluminium in distilled water. The attenuation (or extinction, i.e. absorption and scattering) spectra of nanoparticles are measured at room temperature in the UV and optical wavelength ranges. The size of nanoparticles is determined using atomic force microscopy. A new method of scanning photoluminescence is proposed to evaluate the threshold of nanoparticle removal from the surface of a glass substrate exposed to IR femtosecond laser pulsesmore » with intensities 10{sup 11} – 10{sup 13} W cm{sup -2}. (interaction of laser radiation with matter)« less

Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Geels, Randall Scott

The theory, design, fabrication, and testing of vertical-cavity surface-emitting lasers (VCSELs) is explored in depth. The design of the distributed Bragg reflector (DBR) mirrors is thoroughly treated and both analytic and numerical approaches for computing the reflectivity are covered. The electrical properties of the DBR mirrors are also considered and graded interfaces are found to be critical in reducing the series voltage drop in the mirrors. Thickness variations due to growth rate uncertainties are considered and the permissible thickness inaccuracies are discussed. Layer thickness variations of several percent can be tolerated without large changes in the threshold current. The growth of VCSELs by molecular beam epitaxy (MBE) is described in detail as is the device processing technology for broad area as well as small area devices. Results from numerous devices are reported. Broad area in-plane lasers were used to characterize the material and determine the internal parameters. Broad area VCSELs were fabricated to determine the characteristics of the VCSEL cavity. Small area VCSELs were fabricated and extensively tested. Measured and derived parameters from small area devices include: threshold current (~0.7 mA), peak output power (>3 mW), maximum operation temperature (>110^ circC), output power at 100^ circC (~0.4 mW), and linewidth (85 MHz). The near field, far field, and polarization characteristics were also measured.

Statistical study of the reliability of oxide-defined stripe cw lasers of (AlGa)As

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ettenberg, M.

1979-03-01

In this report, we describe a statistical study of the reliability of oxide-defined stripe-contact cw injection lasers of (AlGa)As. These devices have one facet coated with Al/sub 2/O/sub 3/ and one facet coated with an Al/sub 2/O/sub 3//Si dichroic reflector; the lasers are optimized for cw low-threshold currents at room temperature, with values typically about 50 mA. Lifetests were carried out at 70 /sup 0/C ambient, in the cw mode of operation with about 5 mW output. Previous lifetests showed that the degradation rate followed a 0.95-eV activation energy so the 70 /sup 0/C environment provides a degradation acceleration factormore » of 190 over that at room temperature. We have found that the device failures follow a log-normal distribution, characterized by a mean time before failure of 4200 h and a standard deviation of 1.3. This corresponds to a mean time to failure (MTTF) of 10/sup 6/ h at room temperature. Failure is defined here as the inability of the device to emit 1 mW of stimulated cw output at 70 /sup 0/C, and assumes that optical feedback will be employed to adjust the laser current during operation. If a constant-current drive is envisioned, the failures for a 3-dB drop in light output also follow a log-normal distribution with a similar slope (standard deviation=1.1) and a MTTF of 2000 h at 70 /sup 0/C (500 000 h at room temperature). The failures were found to be mainly due to bulk gradual degradation and not facet or contact failure. Careful study of lasers before and after lifetest showed a significant increase in contact thermal resistance. However, this increase accounts for only a small portion of the nearly 70% increase in room-temperature cw threshold after failure at 70 /sup 0/C. After failure at 70 /sup 0/C, we also noted a degradation in the near-field and associated far-field pattern of the laser.« less

Laser-induced retinal damage thresholds for annular retinal beam profiles

NASA Astrophysics Data System (ADS)

Kennedy, Paul K.; Zuclich, Joseph A.; Lund, David J.; Edsall, Peter R.; Till, Stephen; Stuck, Bruce E.; Hollins, Richard C.

2004-07-01

The dependence of retinal damage thresholds on laser spot size, for annular retinal beam profiles, was measured in vivo for 3 μs, 590 nm pulses from a flashlamp-pumped dye laser. Minimum Visible Lesion (MVL)ED50 thresholds in rhesus were measured for annular retinal beam profiles covering 5, 10, and 20 mrad of visual field; which correspond to outer beam diameters of roughly 70, 160, and 300 μm, respectively, on the primate retina. Annular beam profiles at the retinal plane were achieved using a telescopic imaging system, with the focal properties of the eye represented as an equivalent thin lens, and all annular beam profiles had a 37% central obscuration. As a check on experimental data, theoretical MVL-ED50 thresholds for annular beam exposures were calculated using the Thompson-Gerstman granular model of laser-induced thermal damage to the retina. Threshold calculations were performed for the three experimental beam diameters and for an intermediate case with an outer beam diameter of 230 μm. Results indicate that the threshold vs. spot size trends, for annular beams, are similar to the trends for top hat beams determined in a previous study; i.e., the threshold dose varies with the retinal image area for larger image sizes. The model correctly predicts the threshold vs. spot size trends seen in the biological data, for both annular and top hat retinal beam profiles.

Damage Threshold of In Vivo Rabbit Cornea by 2 micron Laser Irradiation

DTIC Science & Technology

2007-01-01

in laser injury experiments? Implications for human exposure limits. Health Phys 2002; 82(3):335-347. 11. Siegman AE, Sasnett MW, Johnston TF. Choice... Laser Irradiation DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the following report: TITLE: Conference on...part numbers comprise the compilation report: ADP023676 thru ADP023710 UNCLASSIFIED Damage Threshold of In Vivo Rabbit Cornea by 2 gm Laser Irradiation

Understanding the Femtosecond Laser-Solid Interaction Near and Beyond the Material Damage Threshold

DTIC Science & Technology

2016-05-23

study of the fundamentals of femtosecond laser damage as a function of various parameters, laser wavelength, pulsewidth, pulse number, experimental ... experimental observation without any free parameters. The brand new FSD Lab constructed under the BRI grant in the Physics Research Building at the Ohio... studied across a range of band-gaps for s- and p-polarized light and it is found that conventional theoretical prediction on laser damage threshold

Unique capabilities for ICF and HEDP research with the KrF laser

NASA Astrophysics Data System (ADS)

Obenschain, Stephen; Bates, Jason; Chan, Lop-Yung; Karasik, Max; Kehne, David; Sethian, John; Serlin, Victor; Weaver, James; Oh, Jaechul; Jenkins, Bruce; Lehmberg, Robert; Hegeler, Frank; Terrell, Stephen; Aglitskiy, Yefim; Schmitt, Andrew

2014-10-01

The krypton-fluoride (KrF) laser provides the shortest wavelength, broadest bandwidth and most uniform target illumination of all developed high-energy lasers. For directly driven targets these characteristics result in higher and more uniform ablation pressures as well as higher intensity thresholds for laser-plasma instability. The ISI beam smoothing scheme implemented on the NRL Nike KrF facility allows easy implementation of focal zooming where the laser radial profile is varied during the laser pulse. The capability for near continuous zooming with KrF would be valuable towards minimizing the effects of cross beam energy transport (CBET) in directly driven capsule implosions. The broad bandwidth ISI beam smoothing that is utilized with the Nike KrF facility may further inhibit certain laser plasma instability. In this presentation we will summarize our current understanding of laser target interaction with the KrF laser and the benefits it provides for ICF and certain HEDP experiments. Status and progress in high-energy KrF laser technology will also be discussed. Work supported by the Deparment of Energy, NNSA.

Laser damage of free-standing nanometer membranes

NASA Astrophysics Data System (ADS)

Morimoto, Yuya; Roland, Iännis; Rennesson, Stéphanie; Semond, Fabrice; Boucaud, Philippe; Baum, Peter

2017-12-01

Many high-field/attosecond and ultrafast electron diffraction/microscopy experiments on condensed matter require samples in the form of free-standing membranes with nanometer thickness. Here, we report the measurement of the laser-induced damage threshold of 11 different free-standing nanometer-thin membranes of metallic, semiconducting, and insulating materials for 1-ps, 1030-nm laser pulses at 50 kHz repetition rate. We find a laser damage threshold that is very similar to each corresponding bulk material. The measurements also reveal a band gap dependence of the damage threshold as a consequence of different ionization rates. These results establish the suitability of free-standing nanometer membranes for high-field pump-probe experiments.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zubov, F. I.; Kryzhanovskaya, N. V.; Moiseev, E. I.

The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold current density is 0.58 kA/cm{sup 2}, the subthreshold linewidth of the whispering-gallery mode is 50 pm at a wavelength lying in the range of 1.26–1.27 μm. The total power emitted into free space reaches ~0.1 mW in the cw mode, whereas the radiation power of the whispering-gallery modes is ~2.8%.

[Analysis and experimental verification of sensitivity and SNR of laser warning receiver].

PubMed

Zhang, Ji-Long; Wang, Ming; Tian, Er-Ming; Li, Xiao; Wang, Zhi-Bin; Zhang, Yue

2009-01-01

In order to countermeasure increasingly serious threat from hostile laser in modern war, it is urgent to do research on laser warning technology and system, and the sensitivity and signal to noise ratio (SNR) are two important performance parameters in laser warning system. In the present paper, based on the signal statistical detection theory, a method for calculation of the sensitivity and SNR in coherent detection laser warning receiver (LWR) has been proposed. Firstly, the probabilities of the laser signal and receiver noise were analyzed. Secondly, based on the threshold detection theory and Neyman-Pearson criteria, the signal current equation was established by introducing detection probability factor and false alarm rate factor, then, the mathematical expressions of sensitivity and SNR were deduced. Finally, by using method, the sensitivity and SNR of the sinusoidal grating laser warning receiver developed by our group were analyzed, and the theoretic calculation and experimental results indicate that the SNR analysis method is feasible, and can be used in performance analysis of LWR.

Electronic properties of solids excited with intermediate laser power densities

NASA Astrophysics Data System (ADS)

Sirotti, Fausto; Tempo Beamline Team

Intermediate laser power density up to about 100 GW/cm2 is below the surface damage threshold is currently used to induce modification in the physical properties on short time scales. The absorption of a short laser pulse induces non-equilibrium electronic distributions followed by lattice-mediated equilibrium taking place only in the picosecond range. The role of the hot electrons is particularly important in several domains as for example fast magnetization and demagnetization processes, laser induced phase transitions, charge density waves. Angular resolved photoelectron spectroscopy measuring directly energy and momentum of electrons is the most adapted tool to study the electronic excitations at short time scales during and after fast laser excitations. The main technical problem is the space charge created by the pumping laser pulse. I will present angular resolved multiphoton photoemission results obtained with 800 nm laser pulses showing how space charge electrons emitted during fast demagnetization processes can be measured. Unable enter Affiliation: CNRS-SOLEIL Synchrotron L'Orme des Merisiers , Saint Aubin 91192 Gif sur Yvette France.

Lowered threshold energy for femtosecond laser induced optical breakdown in a water based eye model by aberration correction with adaptive optics.

PubMed

Hansen, Anja; Géneaux, Romain; Günther, Axel; Krüger, Alexander; Ripken, Tammo

2013-06-01

In femtosecond laser ophthalmic surgery tissue dissection is achieved by photodisruption based on laser induced optical breakdown. In order to minimize collateral damage to the eye laser surgery systems should be optimized towards the lowest possible energy threshold for photodisruption. However, optical aberrations of the eye and the laser system distort the irradiance distribution from an ideal profile which causes a rise in breakdown threshold energy even if great care is taken to minimize the aberrations of the system during design and alignment. In this study we used a water chamber with an achromatic focusing lens and a scattering sample as eye model and determined breakdown threshold in single pulse plasma transmission loss measurements. Due to aberrations, the precise lower limit for breakdown threshold irradiance in water is still unknown. Here we show that the threshold energy can be substantially reduced when using adaptive optics to improve the irradiance distribution by spatial beam shaping. We found that for initial aberrations with a root-mean-square wave front error of only one third of the wavelength the threshold energy can still be reduced by a factor of three if the aberrations are corrected to the diffraction limit by adaptive optics. The transmitted pulse energy is reduced by 17% at twice the threshold. Furthermore, the gas bubble motions after breakdown for pulse trains at 5 kilohertz repetition rate show a more transverse direction in the corrected case compared to the more spherical distribution without correction. Our results demonstrate how both applied and transmitted pulse energy could be reduced during ophthalmic surgery when correcting for aberrations. As a consequence, the risk of retinal damage by transmitted energy and the extent of collateral damage to the focal volume could be minimized accordingly when using adaptive optics in fs-laser surgery.

Lowered threshold energy for femtosecond laser induced optical breakdown in a water based eye model by aberration correction with adaptive optics

PubMed Central

Hansen, Anja; Géneaux, Romain; Günther, Axel; Krüger, Alexander; Ripken, Tammo

2013-01-01

In femtosecond laser ophthalmic surgery tissue dissection is achieved by photodisruption based on laser induced optical breakdown. In order to minimize collateral damage to the eye laser surgery systems should be optimized towards the lowest possible energy threshold for photodisruption. However, optical aberrations of the eye and the laser system distort the irradiance distribution from an ideal profile which causes a rise in breakdown threshold energy even if great care is taken to minimize the aberrations of the system during design and alignment. In this study we used a water chamber with an achromatic focusing lens and a scattering sample as eye model and determined breakdown threshold in single pulse plasma transmission loss measurements. Due to aberrations, the precise lower limit for breakdown threshold irradiance in water is still unknown. Here we show that the threshold energy can be substantially reduced when using adaptive optics to improve the irradiance distribution by spatial beam shaping. We found that for initial aberrations with a root-mean-square wave front error of only one third of the wavelength the threshold energy can still be reduced by a factor of three if the aberrations are corrected to the diffraction limit by adaptive optics. The transmitted pulse energy is reduced by 17% at twice the threshold. Furthermore, the gas bubble motions after breakdown for pulse trains at 5 kilohertz repetition rate show a more transverse direction in the corrected case compared to the more spherical distribution without correction. Our results demonstrate how both applied and transmitted pulse energy could be reduced during ophthalmic surgery when correcting for aberrations. As a consequence, the risk of retinal damage by transmitted energy and the extent of collateral damage to the focal volume could be minimized accordingly when using adaptive optics in fs-laser surgery. PMID:23761849

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Skierbiszewski, Czeslaw; Muziol, Grzegorz; Nowakowski-Szkudlarek, Krzesimir; Turski, Henryk; Siekacz, Marcin; Feduniewicz-Zmuda, Anna; Nowakowska-Szkudlarek, Anna; Sawicka, Marta; Perlin, Piotr

2018-03-01

We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm2 and the slope efficiency is 0.5 W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm2 is below 10-4 Ω·cm2.

Laser induced damage thresholds and laser safety levels. Do the units of measurement matter?

NASA Astrophysics Data System (ADS)

Wood, R. M.

1998-04-01

The commonly used units of measurement for laser induced damage are those of peak energy or power density. However, the laser induced damage thresholds, LIDT, of all materials are well known to be absorption, wavelength, spot size and pulse length dependent. As workers using these values become divorced from the theory it becomes increasingly important to use the correct units and to understand the correct scaling factors. This paper summarizes the theory and highlights the danger of using the wrong LIDT units in the context of potentially hazardous materials, laser safety eyewear and laser safety screens.

Pump polarization insensitive and efficient laser-diode pumped Yb:KYW ultrafast oscillator.

PubMed

Wang, Sha; Wang, Yan-Biao; Feng, Guo-Ying; Zhou, Shou-Huan

2016-02-01

We theoretically and experimentally report and evaluate a novel split laser-diode (LD) double-end pumped Yb:KYW ultrafast oscillator aimed at improving the performance of an ultrafast laser. Compared to a conventional unpolarized single-LD end-pumped ultrafast laser system, we improve the laser performance such as absorption efficiency, slope efficiency, cw mode-locking threshold, and output power by this new structure LD-pumped Yb:KYW ultrafast laser. Experiments were carried out with a 1 W output fiber-coupled LD. Experimental results show that the absorption increases from 38.7% to 48.4%, laser slope efficiency increases from 18.3% to 24.2%, cw mode-locking threshold decreases 12.7% from 630 to 550 mW in cw mode-locking threshold, and maximum output-power increases 28.5% from 158.4 to 221.5 mW when we switch the pump scheme from an unpolarized single-end pumping structure to a split LD double-end pumping structure.

Laser heating and ablation at high repetition rate in thermal confinement regime

NASA Astrophysics Data System (ADS)

Brygo, François; Semerok, A.; Oltra, R.; Weulersse, J.-M.; Fomichev, S.

2006-09-01

Laser heating and ablation of materials with low absorption and thermal conductivity (paint and cement) were under experimental and theoretical investigations. The experiments were made with a high repetition rate Q-switched Nd:YAG laser (10 kHz, 90 ns pulse duration and λ = 532 nm). High repetition rate laser heating resulted in pulse per pulse heat accumulation. A theoretical model of laser heating was developed and demonstrated a good agreement between the experimental temperatures measured with the infrared pyrometer and the calculated ones. With the fixed wavelength and laser pulse duration, the ablation threshold fluence of paint was found to depend on the repetition rate and the number of applied pulses. With a high repetition rate, the threshold fluence decreased significantly when the number of applied pulses was increasing. The experimentally obtained thresholds were well described by the developed theoretical model. Some specific features of paint heating and ablation with high repetition rate lasers are discussed.

Effect of LFTSD on underwater laser induced breakdown spectroscopy with different laser energies

NASA Astrophysics Data System (ADS)

Song, Jiaojian; Guo, Jinjia; Tian, Ye; Lu, Yuan; Zheng, Ronger

2017-10-01

With the hope of applying LIBS to solid target detection in deep-sea, the influences of laser focus to sample distance (LFTSD) on the plasma characteristics were investigated using spectra-image approach with the laser energies at sub- and super- threshold irradiance of solution. The experimental results show that LFTSD is a critical parameter which can directly influence the plasma shapes, by changing the laser fluence on sample surface. The plasma is divided into two parts under pre-focus condition, while the plasma only forms at the surface of Cu target under de-focus condition. Moreover, the "seed electron" generated from Cu sample can reduce the breakdown threshold of the solution. By comparing the laser energy, it seems to be inefficient by using super-threshold energy due to the plasma shielding effect of the liquid. High quality spectra can be observed by using lower laser energy and longer gate delay (25 mJ and 1000 ns, in this work).

Intensity dynamics in a waveguide array laser

NASA Astrophysics Data System (ADS)

Feng, Mingming; Williams, Matthew O.; Kutz, J. Nathan; Silverman, Kevin L.; Mirin, Richard P.; Cundiff, Steven T.

2011-02-01

We consider experimentally and theoretically the optical field dynamics of a five-emitter laser array subject to a ramped injection current. We have achieved experimentally an array that produces a robust oscillatory power output with a nearly constant π phase shift between the oscillations from each waveguide. The output power also decreases linearly as a function of waveguide number. Those behaviors persisted for pump currents varying between 380 and 500 mA with only a slight change in phase. Of note is the fact that the fundamental frequency of oscillation increases with injection current, and higher harmonics are produced above a threshold current of approximately 380 mA. Experimental observations and theoretical predictions are in agreement. A low dimensional model was also developed and the impact of the nonuniform injection current studied. A nonuniform injection current is capable of shifting the bifurcations of the waveguide array providing a valuable method of array tuning without additional gain or structural alterations to the array.

Efficient prediction of terahertz quantum cascade laser dynamics from steady-state simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnew, G.; Lim, Y. L.; Nikolić, M.

2015-04-20

Terahertz-frequency quantum cascade lasers (THz QCLs) based on bound-to-continuum active regions are difficult to model owing to their large number of quantum states. We present a computationally efficient reduced rate equation (RE) model that reproduces the experimentally observed variation of THz power with respect to drive current and heat-sink temperature. We also present dynamic (time-domain) simulations under a range of drive currents and predict an increase in modulation bandwidth as the current approaches the peak of the light–current curve, as observed experimentally in mid-infrared QCLs. We account for temperature and bias dependence of the carrier lifetimes, gain, and injection efficiency,more » calculated from a full rate equation model. The temperature dependence of the simulated threshold current, emitted power, and cut-off current are thus all reproduced accurately with only one fitting parameter, the interface roughness, in the full REs. We propose that the model could therefore be used for rapid dynamical simulation of QCL designs.« less

Photodiode-based cutting interruption sensor for near-infrared lasers.

PubMed

Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

2016-03-01

We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babichev, A. V.; Bousseksou, A.; Pikhtin, N. A.

2016-10-15

The room-temperature generation of multiperiod quantum-cascade lasers (QCL) at a wavelength of 5.8 μm in the pulsed mode is demonstrated. The heterostructure of a quantum-cascade laser based on a heterojunction of InGaAs/InAlAs alloys is grown by molecular-beam epitaxy and incorporates 60 identical cascades. The threshold current density of the stripe laser 1.4 mm long and 22 μm wide is ~4.8 kA/cm{sup 2} at a temperature of 303 K. The maximum power of the optical-radiation output from one QCL face, recorded by a detector, is 88 mW. The actual optical-power output from one QCL face is no less than 150 mW.more » The results obtained and possible ways of optimizing the structure of the developed quantum-cascade lasers are discussed.« less

Laser-induced damage threshold tests of ultrafast multilayer dielectric coatings in various environmental conditions relevant for operation of ELI beamlines laser systems

NASA Astrophysics Data System (ADS)

Ďurák, Michal; Velpula, Praveen Kumar; Kramer, Daniel; Cupal, Josef; Medřík, Tomáš; Hřebíček, Jan; Golasowski, Jiří; Peceli, Davorin; Kozlová, Michaela; Rus, Bedřich

2017-01-01

Increasing the laser-induced damage resistance of optical components is one of the major challenges in the development of Peta-watt (PW) class laser systems. The extreme light infrastructure (ELI) beamlines project will provide ultrafast laser systems with peak powers up to 10 PW available every minute and PW class beams at 10 Hz complemented by a 5-TW, 1-kHz beamline. Sustainable performance of PW class laser systems relies on the durability of the employed optical components. As part of an effort to evaluate the damage resistance of components utilized in ELI beamlines systems, damage thresholds of several optical multilayer dielectric coatings were measured with different laser parameters and in different environments. Three coatings were tested with 10 Hz and 1 kHz pulse repetition rates, and the effect of a cleaning treatment on their damage resistance was examined. To explore the damage threshold behavior at different vacuum levels, one coating was subject to tests at various residual gas pressures. No change of damage threshold in a high vacuum with respect to ambient pressure was recorded. The effect of the cleaning treatment was found to be inconsistent, suggesting that development of the optimal cleaning treatment for a given coating requires consideration of its specific properties.

Low threshold L-band mode-locked ultrafast fiber laser assisted by microfiber-based carbon nanotube saturable absorber

NASA Astrophysics Data System (ADS)

Lau, K. Y.; Ng, E. K.; Abu Bakar, M. H.; Abas, A. F.; Alresheedi, M. T.; Yusoff, Z.; Mahdi, M. A.

2018-04-01

We demonstrate a passively mode-locked erbium-doped fiber laser in L-band wavelength region with low mode-locking threshold employing a 1425 nm pump wavelength. The mode-locking regime is generated by microfiber-based saturable absorber using carbon nanotube-polymer composite in a ring cavity. This carbon nanotube saturable absorber shows saturation intensity of 9 MW/cm2. In this work, mode-locking laser threshold is observed at 36.4 mW pump power. At the maximum pump power of 107.6 mW, we obtain pulse duration at full-width half-maximum point of 490 fs and time bandwidth product of 0.33, which corresponds to 3-dB spectral bandwidth of 5.8 nm. The pulse repetition rate remains constant throughout the experiment at 5.8 MHz due to fixed cavity length of 35.5 m. Average output power and pulse energy of 10.8 mW and 1.92 nJ are attained respectively through a 30% laser output extracted from the mode-locked cavity. This work highlights the feasibility of attaining a low threshold mode-locked laser source to be employed as seed laser in L-band wavelength region.

Design and comparison of laser windows for high-power lasers

NASA Astrophysics Data System (ADS)

Niu, Yanxiong; Liu, Wenwen; Liu, Haixia; Wang, Caili; Niu, Haisha; Man, Da

2014-11-01

High-power laser systems are getting more and more widely used in industry and military affairs. It is necessary to develop a high-power laser system which can operate over long periods of time without appreciable degradation in performance. When a high-energy laser beam transmits through a laser window, it is possible that the permanent damage is caused to the window because of the energy absorption by window materials. So, when we design a high-power laser system, a suitable laser window material must be selected and the laser damage threshold of the window must be known. In this paper, a thermal analysis model of high-power laser window is established, and the relationship between the laser intensity and the thermal-stress field distribution is studied by deducing the formulas through utilizing the integral-transform method. The influence of window radius, thickness and laser intensity on the temperature and stress field distributions is analyzed. Then, the performance of K9 glass and the fused silica glass is compared, and the laser-induced damage mechanism is analyzed. Finally, the damage thresholds of laser windows are calculated. The results show that compared with K9 glass, the fused silica glass has a higher damage threshold due to its good thermodynamic properties. The presented theoretical analysis and simulation results are helpful for the design and selection of high-power laser windows.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slipchenko, S. O., E-mail: serghpl@mail.ioffe.ru; Podoskin, A. A.; Pikhtin, N. A.

Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied atmore » a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.« less

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

NASA Astrophysics Data System (ADS)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Ultrashort Laser Retinal Damage Threshold Mechanisms

DTIC Science & Technology

2010-01-15

epithelium . Below one nanosecond both stress-confinement in melanosomes and self-focusing reduce the threshold for damage as measured in corneal radiant... epithelium (RPE). Below 1 ns, both stress confinement in melanosomes and self-focusing reduce the threshold for damage as measured in corneal radiant...collimated laser light is focused to a very small spot on the retina. The retinal pigment epithelium (RPE) contains melanosomes, which are the primary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michel, D. T.; Maximov, A. V.; Short, R. W.

The fraction of laser energy converted into hot electrons by the two-plasmon-decay instability is found to have different overlapped intensity thresholds for various configurations on the Omega Laser Facility [T. R. Boehly et al., Opt. Commun. 133, 495 (1997); J. H. Kelly et al., J. Phys. IV 133, 75 (2006)]. A factor-of-2 difference in the overlapped intensity threshold is observed between two- and four-beam configurations. The overlapped intensity threshold increases by a factor of 2 between the 4- and 18-beam configurations and by a factor of 3 between the 4- and 60-beam configurations. This is explained by a linear common-wavemore » model where multiple laser beams drive a common electron-plasma wave in a wavevector region that bisects the laser beams (resonant common-wave region in k-space). These experimental results indicate that the hot-electron threshold depends on the hydrodynamic parameters at the quarter-critical density surface, the configuration of the laser beams, and the sum of the intensity of the beams that share the same angle with the common-wave vector.« less

Laser damage of HR, AR-coatings, monolayers and bare surfaces at 1064 nm

NASA Technical Reports Server (NTRS)

Garnov, S. V.; Klimentov, S. M.; Said, A. A.; Soileau, M. J.

1993-01-01

Laser induced damage thresholds and morphologies were investigated in a variety of uncoated and coated surfaces, including monolayers and multi-layers of different chemical compositions. Both antireflective (AR) and highly reflective (HR) were tested. Testing was done at 1064 nm with 25 picosecond and 8 nanosecond YAG/Nd laser single pulses. Spot diameter in the experiments varied from 0.09 to 0.22 mm. The laser damage measurement procedure consisted of 1-on-1 (single laser pulse in the selected site) and N-on-1 experiments including repeated irradiation by pulses of the same fluence and subsequently raised from pulse to pulse fluence until damage occurred. The highest picosecond damage thresholds of commercially available coatings averaged 12 - 14 J/sq cm, 50 percent less than thresholds obtained in bare fused silica. Some coatings and bare surfaces revealed a palpable preconditioning effect (an increase in threshold of 1.2 to 1.8 times). Picosecond and nanosecond data were compared to draw conclusions about pulse width dependence. An attempt was made to classify damage morphologies according to the type of coating, class of irradiating, and damage level.

Methods for improving the damage performance of fused silica polished by magnetorheological finishing

DOE PAGES

Kafka, Kyle R. P.; Hoffman, Brittany N.; Papernov, Semyon; ...

2017-12-11

The laser-induced damage threshold of fused-silica samples processed via magnetorheological finishing is investigated for polishing compounds depending on the type of abrasive material and the post-polishing surface roughness. The effectiveness of laser conditioning is examined using a ramped pre-exposure with the same 351-nm, 3-ns Gaussian pulses. Lastly, we examine chemical etching of the surface and correlate the resulting damage threshold to the etching protocol. A combination of etching and laser conditioning is found to improve the damage threshold by a factor of ~3, while maintaining <1-nm surface roughness.

Methods for improving the damage performance of fused silica polished by magnetorheological finishing

NASA Astrophysics Data System (ADS)

Kafka, K. R. P.; Hoffman, B.; Papernov, S.; DeMarco, M. A.; Hall, C.; Marshall, K. L.; Demos, S. G.

2017-12-01

The laser-induced damage threshold of fused-silica samples processed via magnetorheological finishing is investigated for polishing compounds depending on the type of abrasive material and the post-polishing surface roughness. The effectiveness of laser conditioning is examined using a ramped pre-exposure with the same 351-nm, 3-ns Gaussian pulses. Finally, we examine chemical etching of the surface and correlate the resulting damage threshold to the etching protocol. A combination of etching and laser conditioning is found to improve the damage threshold by a factor of 3, while maintaining <1-nm surface roughness.

Analytical expression for Risken-Nummedal-Graham-Haken instability threshold in quantum cascade lasers.

PubMed

Vukovic, N; Radovanovic, J; Milanovic, V; Boiko, D L

2016-11-14

We have obtained a closed-form expression for the threshold of Risken-Nummedal-Graham-Haken (RNGH) multimode instability in a Fabry-Pérot (FP) cavity quantum cascade laser (QCL). This simple analytical expression is a versatile tool that can easily be applied in practical situations which require analysis of QCL dynamic behavior and estimation of its RNGH multimode instability threshold. Our model for a FP cavity laser accounts for the carrier coherence grating and carrier population grating as well as their relaxation due to carrier diffusion. In the model, the RNGH instability threshold is analyzed using a second-order bi-orthogonal perturbation theory and we confirm our analytical solution by a comparison with the numerical simulations. In particular, the model predicts a low RNGH instability threshold in QCLs. This agrees very well with experimental data available in the literature.

On the dynamic readout characteristic of nonlinear super-resolution optical storage

NASA Astrophysics Data System (ADS)

Wei, Jingsong

2013-03-01

Researchers have developed nonlinear super-resolution optical storage for the past twenty years. However, several concerns remain, including (1) the presence of readout threshold power; (2) the increase of threshold power with the reduction of the mark size, and (3) the increase of the carrier-to-noise ratio (CNR) at the initial stage and then decrease with the increase of readout laser power or laser irradiation time. The present work calculates and analyzes the super-resolution spot formed by the thin film masks and the readout threshold power characteristic according to the derived formula and based on the nonlinear saturable absorption characteristic and threshold of structural change. The obtained theoretical calculation and experimental data answer the concerns regarding the dynamic readout threshold characteristic and CNR dependence on laser power and irradiation time. The near-field optical spot scanning experiment further verifies the super-resolution spot formation produced through the nonlinear thin film masks.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Two-stage liquid phase epitaxy for fabrication of buried InGaAsP/InP heterostructures

NASA Astrophysics Data System (ADS)

Procházková, O.; Novotný, J.; Šrobár, F.

1988-11-01

The technology of growth of buried heterojunction lasers emitting at 1.3 μm and some of their physical properties are described. Mesa stripes 8-μm wide were formed on heteroepitaxial wafers grown by liquid phase epitaxy at 630°C. They were buried by a second process at a lower temperature (590°C). The threshold current was about 100 mA and the temperature sensitivity was characterized by a parameter amounting to about 60 K. Single-mode lasing was observed occasionally.

Recombination processes in quantum well lasers with superlattice barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Foxon, C.T.

1989-12-04

Spontaneous emission spectra from GaAs quantum well lasers grown by molecular beam epitaxy show that the radiative recombination rate in (AlAs)(GaAs) superlattice barriers is greater than in alloy barriers of the same average composition ({ital x}=0.25) due to reduction in effective gap by superlattice effects. Measurements of emission spectra as functions of temperature show that these radiative processes account for a significant part of the temperature variation of the threshold current and we estimate that the nonradiative lifetime in the superlattice barriers is an order of magnitude longer than in alloy barriers grown under similar conditions.

808nm high-power high-efficiency GaAsP/GaInP laser bars

NASA Astrophysics Data System (ADS)

Wang, Ye; Yang, Ye; Qin, Li; Wang, Chao; Yao, Di; Liu, Yun; Wang, Lijun

2008-11-01

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

2000W high beam quality diode laser for direct materials processing

NASA Astrophysics Data System (ADS)

Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

2011-11-01

This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

Model of the final borehole geometry for helical laser drilling

NASA Astrophysics Data System (ADS)

Kroschel, Alexander; Michalowski, Andreas; Graf, Thomas

2018-05-01

A model for predicting the borehole geometry for laser drilling is presented based on the calculation of a surface of constant absorbed fluence. It is applicable to helical drilling of through-holes with ultrashort laser pulses. The threshold fluence describing the borehole surface is fitted for best agreement with experimental data in the form of cross-sections of through-holes of different shapes and sizes in stainless steel samples. The fitted value is similar to ablation threshold fluence values reported for laser ablation models.

Predicting threshold and location of laser damage on optical surfaces

DOEpatents

Siekhaus, Wigbert

1987-01-01

An apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities comprising, a focused and pulsed laser, an photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

Studies in Above- and Below-Threshold Harmonics in Argon with an Infrared Femtosecond Laser

NASA Astrophysics Data System (ADS)

Chew, Andrew; Yin, Yanchun; Li, Jie; Ren, Xiaoming; Cunningham, Eric; Wu, Yi; Chang, Zenghu

2016-05-01

We investigate and compare the above- and below-threshold harmonics in Argon gas using our recently-developed 1 kHz, two-cycle (11.4 fs), 3mJ, and carrier-envelope-phase(CEP)-stable laser at 1.6 μm. Such ultraviolet pulses can serve as pump or probe for studying dynamics in atoms and molecules. Unlike high harmonics with photon energy well above the ionization potential, the mechanism for generating harmonics near the ionization threshold is still under intense investigation. Previous work by Chini et al. on below-threshold harmonics was done using a 0.8 μm few-cycle Ti:Sapphire spectrally-broadened source with energy up to 300 μJ. It has been predicted by theory that free-free transitions dominate the below threshold harmonic generation as the laser wavelength increase from near infrared to mid-infrared. We are therefore interested in investigating how using a longer wavelength laser might lead to changes to the behavior of below-threshold harmonics when we vary various parameters. We report the π-periodity CEP dependence and ellipticity dependence of the above- and below-threshold harmonics. This material was based on work supported by National Science Foundation (1068604), Army Research Office (W911NF-14-1-0383), Air Force Office of Scientific Research (FA9550-15-1-0037) and the DARPA PULSE program by a Grant from AMRDEC (W31P4Q1310017).

Mirrorless Optical Parametric Oscillation with Tunable Threshold in Cold Atoms.

PubMed

Mei, Yefeng; Guo, Xianxin; Zhao, Luwei; Du, Shengwang

2017-10-13

We report the demonstration of a mirrorless optical parametric oscillator with a tunable threshold in laser-cooled atoms with four-wave mixing (FWM) using electromagnetically induced transparency. Driven by two classical laser beams, the generated Stokes and anti-Stokes fields counterpropagate and build up efficient intrinsic feedback through the nonlinear FWM process. This feedback does not involve any cavity or spatially distributed microstructures. We observe the transition of photon correlation properties from the biphoton quantum regime (below the threshold) to the oscillation regime (above the threshold). The pump threshold can be tuned by varying the operating parameters. We achieve the oscillation with a threshold as low as 15  μW.

Measurements of the linewidth enhancement factor of mid-infrared quantum cascade lasers by different optical feedback techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jumpertz, L., E-mail: louise.jumpertz@telecom-paristech.fr; MirSense, 8 avenue de la Vauve, F-91120 Palaiseau; Michel, F.

2016-01-15

Precise knowledge of the linewidth enhancement factor of a semiconductor laser under actual operating conditions is of prime importance since this parameter dictates various phenomena such as linewidth broadening or optical nonlinearities enhancement. The above-threshold linewidth enhancement factor of a mid-infrared quantum cascade laser structure operated at 10{sup ∘}C is determined experimentally using two different methods based on optical feedback. Both Fabry-Perot and distributed feedback quantum cascade lasers based on the same active area design are studied, the former by following the wavelength shift as a function of the feedback strength and the latter by self-mixing interferometry. The results aremore » consistent and unveil a clear pump current dependence of the linewidth enhancement factor, with values ranging from 0.8 to about 3.« less

A new and efficient theoretical model to analyze chirped grating distributed feedback lasers

NASA Astrophysics Data System (ADS)

Arif, Muhammad

Threshold conditions of a distributed feedback (DFB) laser with a linearly chirped grating are investigated using a new and efficient method. DFB laser with chirped grating is found to have significant effects on the lasing characteristics. The coupled wave equations for these lasers are derived and solved using a power series method to obtain the threshold condition. A Newton- Raphson routine is used to solve the threshold conditions numerically to obtain threshold gain and lasing wavelengths. To prove the validity of this model, it is applied to both conventional index-coupled and complex- coupled DFB lasers. The threshold gain margins are calculated as functions of the ratio of the gain coupling to index coupling (|κg|/|κ n|), and the phase difference between the index and gain gratings. It was found that for coupling coefficient |κ|l < 0.9, the laser shows a mode degeneracy at particular values of the ratio |κ g|/|κn|, for cleaved facets. We found that at phase differences π/2 and 3π/2, between the gain and index grating, for an AR-coated complex-coupled laser, the laser becomes multimode and a different mode starts to lase. We also studied the effect of the facet reflectivity (both magnitude and phase) on the gain margin of a complex- coupled DFB laser. Although, the gain margin varies slowly with the magnitude of the facet reflectivity, it shows large variations as a function of the phase. Spatial hole burning was found to be minimum at phase difference nπ, n = 0, 1, ... and maximum at phase differences π/2 and 3π/2. The single mode gain margin of an index-coupled linearly chirped CG-DFB is calculated for different chirping factors and coupling constants. We found that there is clearly an optimum chirping for which the single mode gain margin is maximum. The gain margins were calculated also for different positions of the cavity center. The effect of the facet reflectivities and their phases on the gain margin was investigated. We found the gain margin is maximum and the Spatial Hole Burning (SHB) is minimum for the cavity center at the middle of the laser cavity. Effect of chirping on the threshold gain, gain margin and spatial hole burning (SHB) for different parameters, such as the coupling coefficients, facet reflectivities, etc., of these lasers are studied. Single mode yield of these lasers are calculated and compared with that of a uniform grating DFB laser.

Towards the control of the modal energy transfer in transverse mode instabilities

NASA Astrophysics Data System (ADS)

Stihler, Christoph; Jauregui, Cesar; Tünnermann, Andreas; Limpert, Jens

2018-02-01

Thermally-induced refractive index gratings (RIG) in high-power fiber laser systems lead to transverse mode instabilities (TMI) above a certain average power threshold. The effect of TMI is currently the main limitation for the further average power scaling of fiber lasers and amplifiers with nearly diffraction-limited beam quality. In this work we experimentally investigate, for the first time, the growth of the RIG strength by introducing a phase-shift between the RIG and the modal interference pattern in a fiber amplifier. The experiments reveal that the RIG is strong enough to couple energy between different transverse modes even at powers significantly below the TMI threshold, provided that the introduced phase-shift is high enough. This indicates that, as the strength of the RIG further increases with increasing average output power, the RIG becomes more and more sensitive to even small noise-induced phase-shifts, which ultimately trigger TMI. Furthermore, it is shown that a beam cleaning also occurs when a positive phase-shift is introduced, even above the TMI threshold. This finding will pave the way for the development of a new class of mitigation strategies for TMI, which key feature is the control of the introduced phase-shift.

Active polarisation control of a quantum cascade laser using tuneable birefringence in waveguides.

PubMed

Dhirhe, D; Slight, T J; Holmes, B M; Ironside, C N

2013-10-07

We discuss the design, modelling, fabrication and characterisation of an integrated tuneable birefringent waveguide for quantum cascade lasers. We have fabricated quantum cascade lasers operating at wavelengths around 4450 nm that include polarisation mode converters and a differential phase shift section. We employed below laser threshold electroluminescence to investigate the single pass operation of the integrated device. We use a theory based on the electro-optic properties of birefringence in quantum cascade laser waveguides combined with a Jones matrix based description to gain an understanding of the electroluminescence results. With the quantum cascade lasers operating above threshold we demonstrated polarisation control of the output.

Updated LPI Thresholds for the Nike Laser*

NASA Astrophysics Data System (ADS)

Weaver, J. L.; Oh, J.; Afeyan, B.; Phillips, L.; Seely, J.; Kehne, D.; Brown, C.; Obenschain, S. P.; Serlin, V.; Schmitt, A. J.; Feldman, U.; Holland, G.; Manka, C.; Lehmberg, R. H.; McLean, E.

2009-11-01

Advanced implosion designs for direct drive inertial confinement fusion use high laser intensities (10^15-10^16 W/cm^2) to achieve gain (g>100) with a reduction in total laser energy (E<1 MJ). Krypton-fluoride lasers such as the Nike laser at NRL are an attractive choice due to their combination of short wavelength (248 nm), large bandwidth (1-2 THz), and beam smoothing by induced spatial incoherence but the potential threat from laser-plasma instabilities (LPI) needs to be assessed. The 2008 LPI campaign at Nike yielded threshold intensities above 10^15 W/cm^2 for the two-plasmon instability, a value higher than reported for 351 nm glass lasers. The experiments used a planar geometry, solid polystyrene targets, and a subset of beams (E<200 J) with a reduced focal spot (d<125 μm). The 2009 campaign extended the shot parameters to higher laser energies (E<1 kJ) and larger spot sizes (d<300 μm). Spectrally-resolved and time-resolved measurements of x-rays and emission near ^1/2φo and ^3/2φo harmonics of the laser wavelength show threshold intensities consistent with the 2008 results. *Work supported by DoE/NNSA

Myocardium tissue ablation with high-peak-power nanosecond 1,064- and 532-nm pulsed lasers: influence of laser-induced plasma.

PubMed

Ogura, Makoto; Sato, Shunichi; Ishihara, Miya; Kawauchi, Satoko; Arai, Tunenori; Matsui, Takemi; Kurita, Akira; Kikuchi, Makoto; Ashida, Hiroshi; Obara, Minoru

2002-01-01

We investigated the mechanism and characteristics of porcine myocardium tissue ablation in vitro with nanosecond 1,064- and 532-nm pulsed lasers at laser intensities up to approximately 5.0 GW/cm(2). Particular attention was paid to study the influence of the laser-induced plasma on the ablation characteristics. The applicability of these two lasers to transmyocardial laser revascularization (TMLR) was discussed. Porcine myocardium tissue samples were irradiated with 1,064- and 532-nm, Q-switched Nd:YAG laser pulses, and the ablation depths were measured. The temporal profiles of the laser-induced optical emissions were measured with a biplanar phototube. For the ablated tissue samples, histological analysis was performed with an optical microscope and a polarization microscope. The ablation efficiency at 1,064 nm was higher than that at 532 nm. The ablation threshold at 1,064 nm (approximately 0.8 GW/cm(2)) was lower than that at 532 nm (approximately 1.6 GW/cm(2)), in spite of the lower absorption coefficient being expected at 1,064 nm. For the 1,064-nm laser-ablated tissues, thermal damage was very limited, while damage presumably caused by the mechanical effect was observed in most of the cases. For the 1,064-nm laser ablation, the ablation threshold was equal to the threshold of the laser-induced optical emission (approximately 0.8 GW/cm(2)), while for the 532-nm laser ablation, the optical emission threshold ( approximately 2.4 GW/cm(2)) was higher than the ablation threshold. We considered that for the 1,064-nm laser ablation, the tissue removal was achieved through a photodisruption process at laser intensities of > approximately 0.8 GW/cm(2). At laser intensities of > 3.0 GW/cm(2), however, the ablation efficiency decreased; this can be attributed to the absorption of incoming laser pulses by the plasma. For the 532-nm laser ablation, the tissue removal was achieved through a photothermal process at laser intensities of > approximately 1.6 GW/cm(2). At laser intensities of > 2.4 GW/cm(2), a photodisruption process may also contribute to the tissue removal, in addition to a photothermal process. With regard to the ablation rates, the 1,064-nm laser was more suitable for TMLR than the 532-nm laser. We concluded that the 1,064-nm Q-switched Nd:YAG laser would be a potential candidate for a laser source for TMLR because of possible fiber-based beam delivery, its compact structure, cost effectiveness, and easy maintenance. Animal trials, however, have to be carried out to evaluate the influence of the tissue damage. Copyright 2002 Wiley-Liss, Inc.

InAs(PSb)-based ``W'' quantum well laser diodes emitting near 3.3 μm

NASA Astrophysics Data System (ADS)

Joullié, A.; Skouri, E. M.; Garcia, M.; Grech, P.; Wilk, A.; Christol, P.; Baranov, A. N.; Behres, A.; Kluth, J.; Stein, A.; Heime, K.; Heuken, M.; Rushworth, S.; Hulicius, E.; Simecek, T.

2000-05-01

Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical structures having n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 μm, with a lowest threshold current density of 120 A/cm2 at 90 K, and an output power efficiency of 31 mW/facet/A. The characteristic temperature was 35 K.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

NASA Technical Reports Server (NTRS)

Larsson, Anders; Cody, Jeffrey; Lang, Robert J.

1989-01-01

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Self-generation of optical frequency comb in single section quantum dot Fabry-Perot lasers: a theoretical study.

PubMed

Bardella, Paolo; Columbo, Lorenzo Luigi; Gioannini, Mariangela

2017-10-16

Optical Frequency Comb (OFC) generated by semiconductor lasers are currently widely used in the extremely timely field of high capacity optical interconnects and high precision spectroscopy. In the last decade, several experimental evidences of spontaneous OFC generation have been reported in single section Quantum Dot (QD) lasers. Here we provide a physical understanding of these self-organization phenomena by simulating the multi-mode dynamics of a single section Fabry-Perot (FP) QD laser using a Time-Domain Traveling-Wave (TDTW) model that properly accounts for coherent radiation-matter interaction in the semiconductor active medium and includes the carrier grating generated by the optical standing wave pattern in the laser cavity. We show that the latter is the fundamental physical effect at the origin of the multi-mode spectrum appearing just above threshold. A self-mode-locking regime associated with the emission of OFC is achieved for higher bias currents and ascribed to nonlinear phase sensitive effects as Four Wave Mixing (FWM). Our results explain in detail the behaviour observed experimentally by different research groups and in different QD and Quantum Dash (QDash) devices.

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption.

PubMed

Vurgaftman, I; Bewley, W W; Canedy, C L; Kim, C S; Kim, M; Merritt, C D; Abell, J; Lindle, J R; Meyer, J R

2011-12-13

The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 μm to beyond 6 μm.

Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers.

PubMed

Wang, Ruijun; Malik, Aditya; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Roelkens, Gunther

2016-12-12

2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm from 2.01 to 2.07 µm is demonstrated. In the silicon photonic integrated circuit, laser feedback is realized by using a silicon Bragg grating and continuous tuning is realized by using two thermally tuned silicon microring resonators (MRRs) and a phase section. The uncooled laser has maximum output power of 7.5 mW and threshold current density of 0.8 kA/cm². The effect of the coupling gap of the MRRs on tunable laser performance is experimentally assessed. A side mode suppression ratio better than 52 dB over the full tuning range and in the optimum operation point of more than 60 dB is achieved for the laser with weakly coupled MRRs.

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

NASA Astrophysics Data System (ADS)

Sun, Yi; Zhou, Kun; Sun, Qian; Liu, Jianping; Feng, Meixin; Li, Zengcheng; Zhou, Yu; Zhang, Liqun; Li, Deyao; Zhang, Shuming; Ikeda, Masao; Liu, Sheng; Yang, Hui

2016-09-01

Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature. To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si. Here, we report the demonstration of a blue-violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm-2. The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AlN/AlGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue-violet InGaN-based laser on Si.

Advantages of III-nitride laser diodes in solid-state lighting: Advantages of III-nitride laser diodes in solid-state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jonathan J.; Tsao, Jeffrey Y.

2015-01-14

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging formore » both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.« less

Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Colak, S.; Kucharska, A.I.

1988-08-01

The authors have calculated gain spectra and gain-current relations for GaAs-AlGaAs quantum well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transmission broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum well layers. Using reasonable values of the parameters describing these effects, the model predicts correctly the observed lengthening of the laser emission wavelength with respect tomore » the absorption edge and correctly describes the variation of this wavelength, which they have observed for a set of devices with different numbers of quantum wells and the same well width. For a single GaAs quantum well laser 25 A wide, with the same parameters, the model predicts an increase in threshold current by a factor of 2.5 compared to an ideal quantum well without these effects.« less

First-principles simulation of the optical response of bulk and thin-film α-quartz irradiated with an ultrashort intense laser pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyung-Min; Min Kim, Chul; Moon Jeong, Tae, E-mail: jeongtm@gist.ac.kr

A computational method based on a first-principles multiscale simulation has been used for calculating the optical response and the ablation threshold of an optical material irradiated with an ultrashort intense laser pulse. The method employs Maxwell's equations to describe laser pulse propagation and time-dependent density functional theory to describe the generation of conduction band electrons in an optical medium. Optical properties, such as reflectance and absorption, were investigated for laser intensities in the range 10{sup 10} W/cm{sup 2} to 2 × 10{sup 15} W/cm{sup 2} based on the theory of generation and spatial distribution of the conduction band electrons. The method was applied tomore » investigate the changes in the optical reflectance of α-quartz bulk, half-wavelength thin-film, and quarter-wavelength thin-film and to estimate their ablation thresholds. Despite the adiabatic local density approximation used in calculating the exchange–correlation potential, the reflectance and the ablation threshold obtained from our method agree well with the previous theoretical and experimental results. The method can be applied to estimate the ablation thresholds for optical materials, in general. The ablation threshold data can be used to design ultra-broadband high-damage-threshold coating structures.« less

Distributed Feedback Laser Based on Single Crystal Perovskite

NASA Astrophysics Data System (ADS)

Sun, Shang; Xiao, Shumin; Song, Qinghai

2017-06-01

We demonstrate a single crystal perovskite based, with grating-structured photoresist on top, highly polarized distributed feedback laser. A lower laser threshold than the Fabry-Perot mode lasers from the same single crystal CH3NH3PbBr3 microplate was obtained. Single crystal CH3NH3PbBr3 microplates was synthesized with one-step solution processed precipitation method. Once the photoresist on top of the microplate was patterned with electron beam, the device was realized. This one-step fabrication process utilized the advantage of single crystal to the greatest extend. The ultra-low defect density in single crystalline microplate offer an opportunity for lower threshold lasing action compare with poly-crystal perovskite films. In the experiment, the lasing action based on the distributed feedback grating design was found with lower threshold and higher intensity than the Fabry-Perot mode lasers supported by the flat facets of the same microplate.

Turbulence hierarchy in a random fibre laser

PubMed Central

González, Iván R. Roa; Lima, Bismarck C.; Pincheira, Pablo I. R.; Brum, Arthur A.; Macêdo, Antônio M. S.; Vasconcelos, Giovani L.; de S. Menezes, Leonardo; Raposo, Ernesto P.; Gomes, Anderson S. L.; Kashyap, Raman

2017-01-01

Turbulence is a challenging feature common to a wide range of complex phenomena. Random fibre lasers are a special class of lasers in which the feedback arises from multiple scattering in a one-dimensional disordered cavity-less medium. Here we report on statistical signatures of turbulence in the distribution of intensity fluctuations in a continuous-wave-pumped erbium-based random fibre laser, with random Bragg grating scatterers. The distribution of intensity fluctuations in an extensive data set exhibits three qualitatively distinct behaviours: a Gaussian regime below threshold, a mixture of two distributions with exponentially decaying tails near the threshold and a mixture of distributions with stretched-exponential tails above threshold. All distributions are well described by a hierarchical stochastic model that incorporates Kolmogorov’s theory of turbulence, which includes energy cascade and the intermittence phenomenon. Our findings have implications for explaining the remarkably challenging turbulent behaviour in photonics, using a random fibre laser as the experimental platform. PMID:28561064

Measuring single-shot, picosecond optical damage threshold in Ge, Si, and sapphire with a 5.1-μm laser

DOE PAGES

Agustsson, R.; Pogorelsky, I.; Arab, E.; ...

2015-11-18

Optical photonic structures driven by picosecond, GW-class lasers are emerging as promising novel sources of electron beams and high quality X-rays. Due to quadratic dependence on wavelength of the laser ponderomotive potential, the performance of such sources scales very favorably towards longer drive laser wavelengths. However, to take full advantage of photonic structures at mid-IR spectral region, it is important to determine optical breakdown limits of common optical materials. To this end, an experimental study was carried out at a wavelength of 5 µm, using a frequency-doubled CO 2 laser source, with 5 ps pulse length. Single-shot optical breakdowns weremore » detected and characterized at different laser intensities, and damage threshold values of 0.2, 0.3, and 7.0 J/cm 2, were established for Ge, Si, and sapphire, respectively. As a result, the measured damage threshold values were stable and repeatable within individual data sets, and across varying experimental conditions.« less

Measuring single-shot, picosecond optical damage threshold in Ge, Si, and sapphire with a 5.1-μm laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agustsson, R.; Pogorelsky, I.; Arab, E.

Optical photonic structures driven by picosecond, GW-class lasers are emerging as promising novel sources of electron beams and high quality X-rays. Due to quadratic dependence on wavelength of the laser ponderomotive potential, the performance of such sources scales very favorably towards longer drive laser wavelengths. However, to take full advantage of photonic structures at mid-IR spectral region, it is important to determine optical breakdown limits of common optical materials. To this end, an experimental study was carried out at a wavelength of 5 µm, using a frequency-doubled CO 2 laser source, with 5 ps pulse length. Single-shot optical breakdowns weremore » detected and characterized at different laser intensities, and damage threshold values of 0.2, 0.3, and 7.0 J/cm 2, were established for Ge, Si, and sapphire, respectively. As a result, the measured damage threshold values were stable and repeatable within individual data sets, and across varying experimental conditions.« less

Ultralow-threshold laser and blue shift cooperative luminescence in a Yb{sup 3+} doped silica microsphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yantang, E-mail: g@fzu.edu.cn; Huang, Yu; Zhang, Peijin

2014-02-15

An experimental investigation on ultralow threshold laser and blue shift cooperative luminescence (CL) in a Yb{sup 3+} doped silica microsphere (YDSM) with continuous-wave 976 nm laser diode pumping is reported. The experimental results show that the YDSM emits laser oscillation with ultralow threshold of 2.62 μW, and the laser spectrum is modulated by the microsphere morphology characteristics. In addition, blue emission of YDSM is also observed with the increase of pump power, which is supposed to be generated by CL of excited Yb ion-pairs with the absorption of 976 nm photons and Si-O vibration phonons, and the process is explainedmore » with an energy level diagram. This property of the blue shift CL with phonons absorption in the Yb{sup 3+}doped microcavity makes it attractive for the application of laser cooling based on anti-Stokes fluorescence emission, if the Yb{sup 3+}doped microcavity made from with low phonon energy host materials.« less

Femtosecond laser melting of silver nanoparticles: comparison of model simulations and experimental results

NASA Astrophysics Data System (ADS)

Cheng, Chung-Wei; Chang, Chin-Lun; Chen, Jinn-Kuen; Wang, Ben

2018-05-01

Ultrafast laser-induced melting of silver nanoparticles (NPs) using a femtosecond laser pulse is investigated both theoretically and experimentally. The sintered Ag structure fabricated from printed Ag NP ink using femtosecond laser (1064 nm, 300 fs) irradiation is experimentally studied. A two-temperature model with dynamic optical properties and particle size effects on the melting temperature of Ag NPs is considered. The rapid phase change model is incorporated to simulate the Ag NPs' ultrafast laser-induced melting process, and a multi-shot melting threshold fluence predicted from the simulated single-shot melting threshold is developed.

Coherent random lasing from liquid waveguide gain channels with biological scatters

NASA Astrophysics Data System (ADS)

Zhang, Hong; Feng, Guoying; Wang, Shutong; Yang, Chao; Yin, Jiajia; Zhou, Shouhuan

2014-12-01

A unidirectional coherent random laser based on liquid waveguide gain channels with biological scatters is demonstrated. The optical feedback of the random laser is provided by both light scattering and waveguide confinement. This waveguide-scattering-feedback scheme not only reduces the pump threshold but also makes the output of random laser directional. The threshold of our random laser is about 11 μJ. The emission spectra can be sensitively tuned by changing pump position due to the micro/nano-scale randomness of butterfly wings. It shows the potential applications of optofluidic random lasers for bio-chemical sensors on-chip.

Polarization properties of below-threshold harmonics from aligned molecules H2+ in linearly polarized laser fields.

PubMed

Dong, Fulong; Tian, Yiqun; Yu, Shujuan; Wang, Shang; Yang, Shiping; Chen, Yanjun

2015-07-13

We investigate the polarization properties of below-threshold harmonics from aligned molecules in linearly polarized laser fields numerically and analytically. We focus on lower-order harmonics (LOHs). Our simulations show that the ellipticity of below-threshold LOHs depends strongly on the orientation angle and differs significantly for different harmonic orders. Our analysis reveals that this LOH ellipticity is closely associated with resonance effects and the axis symmetry of the molecule. These results shed light on the complex generation mechanism of below-threshold harmonics from aligned molecules.

Effect of Proximity of Features on the Damage Threshold During Submicron Additive Manufacturing Via Two-Photon Polymerization

DOE PAGES

Saha, Sourabh K.; Divin, Chuck; Cuadra, Jefferson A.; ...

2017-05-12

Two-photon polymerization (TPP) is a laser writing process that enables fabrication of millimeter scale three-dimensional (3D) structures with submicron features. In TPP, writing is achieved via nonlinear two-photon absorption that occurs at high laser intensities. Thus, it is essential to carefully select the incident power to prevent laser damage during polymerization. Currently, the feasible range of laser power is identified by writing small test patterns at varying power levels. Here in this paper, we demonstrate that the results of these tests cannot be generalized, because the damage threshold power depends on the proximity of features and reduces by as muchmore » as 47% for overlapping features. We have identified that this reduction occurs primarily due to an increase in the single-photon absorptivity of the resin after curing. We have captured the damage from proximity effects via X-ray 3D computed tomography (CT) images of a non-homogenous part that has varying feature density. Part damage manifests as internal spherical voids that arise due to boiling of the resist. We have empirically quantified this proximity effect by identifying the damage threshold power at different writing speeds and feature overlap spacings. In addition, we present a first-order analytical model that captures the scaling of this proximity effect. Based on this model and the experiments, we have identified that the proximity effect is more significant at high writing speeds; therefore, it adversely affects the scalability of manufacturing. The scaling laws and the empirical data generated here can be used to select the appropriate TPP writing parameters.« less

Effect of Proximity of Features on the Damage Threshold During Submicron Additive Manufacturing Via Two-Photon Polymerization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Sourabh K.; Divin, Chuck; Cuadra, Jefferson A.

Two-photon polymerization (TPP) is a laser writing process that enables fabrication of millimeter scale three-dimensional (3D) structures with submicron features. In TPP, writing is achieved via nonlinear two-photon absorption that occurs at high laser intensities. Thus, it is essential to carefully select the incident power to prevent laser damage during polymerization. Currently, the feasible range of laser power is identified by writing small test patterns at varying power levels. Here in this paper, we demonstrate that the results of these tests cannot be generalized, because the damage threshold power depends on the proximity of features and reduces by as muchmore » as 47% for overlapping features. We have identified that this reduction occurs primarily due to an increase in the single-photon absorptivity of the resin after curing. We have captured the damage from proximity effects via X-ray 3D computed tomography (CT) images of a non-homogenous part that has varying feature density. Part damage manifests as internal spherical voids that arise due to boiling of the resist. We have empirically quantified this proximity effect by identifying the damage threshold power at different writing speeds and feature overlap spacings. In addition, we present a first-order analytical model that captures the scaling of this proximity effect. Based on this model and the experiments, we have identified that the proximity effect is more significant at high writing speeds; therefore, it adversely affects the scalability of manufacturing. The scaling laws and the empirical data generated here can be used to select the appropriate TPP writing parameters.« less

A new understanding of multiple-pulsed laser-induced retinal injury thresholds.

PubMed

Lund, David J; Sliney, David H

2014-04-01

Laser safety standards committees have struggled for years to formulate adequately a sound method for treating repetitive-pulse laser exposures. Safety standards for lamps and LEDs have ignored this issue because averaged irradiance appeared to treat the issue adequately for large retinal image sizes and skin exposures. Several authors have recently questioned the current approach of three test conditions (i.e., limiting single-pulse exposure, average irradiance, and a single-pulse-reduction factor) as still insufficient to treat pulses of unequal energies or certain pulse groupings. Schulmeister et al. employed thermal modeling to show that a total-on-time pulse (TOTP) rule was conservative. Lund further developed the approach of probability summation proposed by Menendez et al. to explain pulse-additivity, whereby additivity is the result of an increasing probability of detecting injury with multiple pulse exposures. This latter argument relates the increase in detection probability to the slope of the probit curve for the threshold studies. Since the uncertainty in the threshold for producing an ophthalmoscopically detectable minimal visible lesion (MVL) is large for retinal exposure to a collimated laser beam, safety committees traditionally applied large risk reduction factors ("safety factors") of one order of magnitude when deriving intrabeam, "point-source" exposure limits. This reduction factor took into account the probability of visually detecting the low-contrast lesion among other factors. The reduction factor is smaller for large spot sizes where these difficulties are quite reduced. Thus the N⁻⁰·²⁵ reduction factor may result from the difficulties in detecting the lesion. Recent studies on repetitive pulse exposures in both animal and in vitro (retinal explant) models support this interpretation of the available data.

Threshold effect under nonlinear limitation of the intensity of high-power light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tereshchenko, S A; Podgaetskii, V M; Gerasimenko, A Yu

2015-04-30

A model is proposed to describe the properties of limiters of high-power laser radiation, which takes into account the threshold character of nonlinear interaction of radiation with the working medium of the limiter. The generally accepted non-threshold model is a particular case of the threshold model if the threshold radiation intensity is zero. Experimental z-scan data are used to determine the nonlinear optical characteristics of media with carbon nanotubes, polymethine and pyran dyes, zinc selenide, porphyrin-graphene and fullerene-graphene. A threshold effect of nonlinear interaction between laser radiation and some of investigated working media of limiters is revealed. It is shownmore » that the threshold model more adequately describes experimental z-scan data. (nonlinear optical phenomena)« less

Pulsed DF chain-laser breakdown induced by maritime aerosols

NASA Astrophysics Data System (ADS)

Amimoto, S. T.; Whittier, J. S.; Ronkowski, F. G.; Valenzuela, P. R.; Harper, G.

1982-08-01

Thresholds for breakdown induced by liquid and solid aerosols in room air have been measured for a 1 microsec-duration pulsed D2-F2 laser of 3.58 -4.78 micron bandwidth. The DF laser beam was directed into an aerosol chamber that simulated maritime atmospheres on the open sea. Both focus and collimated beams were studied. For a focused beam in which the largest encountered aerosol particles were of 1 to 4 micron diameter, pulsed DF breakdown thresholds were measured to lie in the range 0.6 to 1.8 GW/sq cm. Salt-water aerosol breakdown thresholds for micron-size particles were found to be 15 to 30% higher than the corresponding thresholds for fresh-water particles. For a collimated beam that encountered particle diameters as large as 100 microns, breakdown could not be induced using 0.5- microsec (FWHM) pulses at peak intensities of 59 MW/sq cm. Image converter camera measurements of the radial plasma growth rate of 1.3 cm/microsec (at 1.4 GW/sq cm) were consistent with measurements of the cutoff rate of the transmitted laser beam. Pulsed DF breakdown thresholds of 32 MW/sq cm for 30- micron diameter Al2O3 particles were also measured to permit comparison with the earlier pulsed-HF breakdown results of Lencioni, et al.; the solid-particle threshold measurements agree with the Lencioni data if one assumes that the thresholds for microsecond-duration pulses scales is 1/lambda. An approximate theoretical model of the water particle breakdown process is presented that permits the scaling of the present results to other laser pulse durations, aerosol distributions, and transmission path lengths.

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Estimation of Al2O3 critical temperature using a Langmuir probe in laser ablation

NASA Astrophysics Data System (ADS)

Yahiaoui, K.; Abdelli-Messaci, S.; Messaoud Aberkane, S.; Kellou, A.

2016-11-01

Pulsed laser deposition (PLD) has demonstrated its capacity in thin films growing under the moderate laser intensity. But when the laser intensity increases, the presence of droplets on the thin film limits the PLD efficiency such that the process needs an optimization study. In this way, an experimental study has been conducted in order to correlate between the appearance of those droplets and the laser fluence. The comprehension of the physical mechanism during ablation and the control of the deposition parameters allowed to get a safe process. Our experiment consists in measuring the amount of ejected matter from polycrystalline alumina target as a function of the laser fluence when irradiated by a KrF laser. According to laser fluence, several kinds of ablation regimes have been identified. Below a threshold value found as 12 J/cm2, the mechanism of ablation was assigned to normal evaporation, desorption and nonthermal processes. While above this threshold value, the mechanism of ablation was assigned to phase explosion phenomenon which is responsible of droplets formation when the surface temperature approaches the critical temperature T tc. A negative charge collector was used to collect the positive ions in the plume. Their times of flight (TOF) signal were used to estimate the appropriate T tc for alumina target. Ions yield, current as well as kinetic energy were deduced from the TOF signal. Their evolutions show the occurrence of an optical breakdown in the vapor plume which is well correlated with the onset of the phase explosion phenomenon. At 10 J/cm2, the ions velocities collected by the probe have been compared to those obtained from optical emission spectroscopy diagnostic and were discussed. To prove the occurrence of phase explosion by the appearance of droplets, several thin films were elaborated on Si (100) substrate at different laser fluence into vacuum. They have been characterized by scanning electron microscope. The results were well correlated with those obtained with mass measurements as function of laser fluence.

Spectral singularities, threshold gain, and output intensity for a slab laser with mirrors

NASA Astrophysics Data System (ADS)

Doğan, Keremcan; Mostafazadeh, Ali; Sarısaman, Mustafa

2018-05-01

We explore the consequences of the emergence of linear and nonlinear spectral singularities in TE modes of a homogeneous slab of active optical material that is placed between two mirrors. We use the results together with two basic postulates regarding the behavior of laser light emission to derive explicit expressions for the laser threshold condition and output intensity for these modes of the slab and discuss their physical implications. In particular, we reveal the details of the dependence of the threshold gain and output intensity on the position and properties of the mirrors and on the real part of the refractive index of the gain material.

Laser pulse power transmission limits of silica fibers with antireflective coating

NASA Astrophysics Data System (ADS)

Meister, St.; Wosniok, A.; Seewald, G.; Scharfenorth, Ch.; Eichler, H. J.

2005-04-01

Multimode optical fibers are used for the transmission of high power laser pulses and as phase conjugated mirrors by stimulated Brillouin scattering. Both applications are enhanced by antireflection coatings on the fiber end-faces. Fiber transmissions reach more than 99.5% for pulse energies below the threshold of stimulated Brillouin scattering. Laser-induced damage thresholds of the fibers coated with Ta2O5 / SiO2 were measured at 1064 nm and 24 ns pulse duration. A damage threshold of up to 101 J/cm2 could be achieved. The damage morphology was investigated using atomic force microscopy and scanning electron microscopy.

Ultracompact low-threshold organic laser.

PubMed

Deotare, Parag B; Mahony, Thomas S; Bulović, Vladimir

2014-11-25

We report an ultracompact low-threshold laser with an Alq3:DCM host:guest molecular organic thin film gain layer. The device uses a photonic crystal nanobeam cavity which provides a high quality factor to mode volume (Q/V) ratio and increased spontaneous emission factor along with a small footprint. Lasing is observed with a threshold of 4.2 μJ/cm(2) when pumped by femtosecond pulses of λ = 400 nm wavelength light. We also model the dynamics of the laser and show good agreement with the experimental data. The inherent waveguide geometry of the structure enables easy on-chip integration with potential applications in biochemical sensing, inertial sensors, and data communication.

Multimodal backside imaging of a microcontroller using confocal laser scanning and optical-beam-induced current imaging

NASA Astrophysics Data System (ADS)

Finkeldey, Markus; Göring, Lena; Schellenberg, Falk; Brenner, Carsten; Gerhardt, Nils C.; Hofmann, Martin

2017-02-01

Microscopy imaging with a single technology is usually restricted to a single contrast mechanism. Multimodal imaging is a promising technique to improve the structural information that could be obtained about a device under test (DUT). Due to the different contrast mechanisms of laser scanning microscopy (LSM), confocal laser scanning microscopy (CLSM) and optical beam induced current microscopy (OBICM), a combination could improve the detection of structures in integrated circuits (ICs) and helps to reveal their layout. While OBIC imaging is sensitive to the changes between differently doped areas and to semiconductor-metal transitions, CLSM imaging is mostly sensitive to changes in absorption and reflection. In this work we present the implementation of OBIC imaging into a CLSM. We show first results using industry standard Atmel microcontrollers (MCUs) with a feature size of about 250nm as DUTs. Analyzing these types of microcontrollers helps to improve in the field of side-channel attacks to find hardware Trojans, possible spots for laser fault attacks and for reverse engineering. For the experimental results the DUT is placed on a custom circuit board that allows us to measure the current while imaging it in our in-house built stage scanning microscope using a near infrared (NIR) laser diode as light source. The DUT is thinned and polished, allowing backside imaging through the Si-substrate. We demonstrate the possibilities using this optical setup by evaluating OBIC, LSM and CLSM images above and below the threshold of the laser source.

Compact intra-cavity pumped low-threshold passively Q-switched Ho:Sc2SiO5 laser by a LD-pumped Tm:YAP laser at room temperature

NASA Astrophysics Data System (ADS)

Yang, Xiao-tao; Xie, Wen-qiang; Liu, Long; Li, Lin-jun

2017-08-01

A compact intra-cavity pumped low-threshold passively Q-switched (PQS) Ho:Sc2SiO5 (Ho:SSO) laser is reported for the first time. The Tm:YAlO3 (Tm:YAP) crystal and the Ho:SSO crystal are placed in the same laser cavity. A laser diode with a central wavelength of 793 nm is used to realize the output of the Ho:SSO laser. Both the continuous wave (CW) and PQS operation are investigated. A Cr2+:ZnSe is used as the saturable absorber in the PQS Ho:SSO laser. For the CW mode, the laser threshold is only 750 mW, which is 980 mW in the PQS mode. A maximum pulse energy of 699 µJ is primarily obtained, corresponding to the pulse width of 96 ns. The maximum repetition frequency is 1.46 kHz. The maximum pulse peak power can be calculated to be 7.28 kW. The beam quality factor M 2 is calculated to be 1.4 with the maximum output power.

The threshold of vapor channel formation in water induced by pulsed CO2 laser

NASA Astrophysics Data System (ADS)

Guo, Wenqing; Zhang, Xianzeng; Zhan, Zhenlin; Xie, Shusen

2012-12-01

Water plays an important role in laser ablation. There are two main interpretations of laser-water interaction: hydrokinetic effect and vapor phenomenon. The two explanations are reasonable in some way, but they can't explain the mechanism of laser-water interaction completely. In this study, the dynamic process of vapor channel formation induced by pulsed CO2 laser in static water layer was monitored by high-speed camera. The wavelength of pulsed CO2 laser is 10.64 um, and pulse repetition rate is 60 Hz. The laser power ranged from 1 to 7 W with a step of 0.5 W. The frame rate of high-speed camera used in the experiment was 80025 fps. Based on high-speed camera pictures, the dynamic process of vapor channel formation was examined, and the threshold of vapor channel formation, pulsation period, the volume, the maximum depth and corresponding width of vapor channel were determined. The results showed that the threshold of vapor channel formation was about 2.5 W. Moreover, pulsation period, the maximum depth and corresponding width of vapor channel increased with the increasing of the laser power.

LASER PLASMA: Experimental confirmation of the erosion origin of pulsed low-threshold surface optical breakdown of air

NASA Astrophysics Data System (ADS)

Min'ko, L. Ya; Chumakou, A. N.; Chivel', Yu A.

1988-08-01

Nanosecond kinetic spectroscopy techniques were used to identify the erosion origin of pulsed low-threshold surface optical breakdown of air as a result of interaction of microsecond neodymium and CO2 laser pulses with some metals (indium, lead).

Novel core-shell (TiO2@Silica) nanoparticles for scattering medium in a random laser: higher efficiency, lower laser threshold and lower photodegradation.

PubMed

Jimenez-Villar, Ernesto; Mestre, Valdeci; de Oliveira, Paulo C; de Sá, Gilberto F

2013-12-21

There has been growing interest in scattering media in recent years, due to their potential applications as solar collectors, photocatalyzers, random lasers and other novel optical devices. Here, we have introduced a novel core-shell scattering medium for a random laser composed of TiO2@Silica nanoparticles. Higher efficiency, lower laser threshold and long photobleaching lifetime in random lasers were demonstrated. This has introduced a new method or parameter (fraction of absorbed pumping), which opens a new avenue to characterize and study the scattering media. Optical chemical and colloidal stabilities were combined by coating a suitable silica shell onto TiO2 nanoparticles.

Effect of the three-dimensional structure of laser emission on the dynamics of low-threshold optical breakdown plasmas

NASA Astrophysics Data System (ADS)

Anisimov, V. N.; Arutiunian, R. V.; Bol'Shov, L. A.; Derkach, O. N.; Kanevskii, M. F.

1989-03-01

The effect of the transverse structure of pulsed CO2 laser emission on the dynamics of laser-induced detonation waves propagating from a metal surface and on plasma transparency recovery is investigated theoretically and experimentally. Particular attention is given to breakdown initiation near the surface. It is suggested that the inclusion of refraction in the plasma into a self-consistent numerical mode is essential for the adequate quantitative description of experimental data on the interaction of laser emission with low-threshold optical breakdown plasmas.

Predicting threshold and location of laser damage on optical surfaces

DOEpatents

Siekhaus, W.

1985-02-04

Disclosed is an apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities. The apparatus comprises a focused and pulsed laser, a photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Li, E-mail: lil@cust.edu.cn, E-mail: wangz@cust.edu.cn, E-mail: kq-peng@bnu.edu.cn; Zhang, Ziang; Yu, Miao

2015-09-28

Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arraysmore » with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ{sub 0} = 1064 nm. The minimal feature size is only several nanometers (sub λ{sub 0}/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser.« less

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers.

PubMed

Chen, X; Bhola, B; Huang, Y; Ho, S T

2010-08-02

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

Investigation of numerical simulation on all-optical flip-flop stability maps of 1550nm vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Li, Jun; Xia, Qing; Wang, Xiaofa

2017-10-01

Based on the extended spin-flip model, the all-optical flip-flop stability maps of the 1550nm vertical-cavity surface-emitting laser have been studied. Theoretical results show that excellent agreement is found between theoretical and the reported experimental results in polarization switching point current which is equal to 1.95 times threshold. Furthermore, the polarization bistable region is wide which is from 1.05 to 1.95 times threshold. A new method is presented that uses power difference between two linear polarization modes as the judging criterion of trigger degree and stability maps of all-optical flip-flop operation under different injection parameters are obtained. By alternately injecting set and reset pulse with appropriate parameters, the mutual conversion switching between two polarization modes is realized, the feasibility of all-optical flip-flop operation is checked theoretically. The results show certain guiding significance on the experimental study on all optical buffer technology.

High Efficiency, Low Power-Consumption DFB Quantum Cascade Lasers Without Lateral Regrowth

NASA Astrophysics Data System (ADS)

Jia, Zhi-Wei; Wang, Li-Jun; Zhang, Jin-Chuan; Liu, Feng-Qi; Zhou, Yu-Hong; Wang, Dong-Bo; Jia, Xue-Feng; Zhuo, Ning; Liu, Jun-Qi; Zhai, Shen-Qiang; Wang, Zhan-Guo

2017-04-01

Very low power-consumption distributed feedback (DFB) quantum cascade lasers (QCLs) at the wavelength around 4.9 μm were fabricated by conventional process without lateral regrowth of InP:Fe or using sidewall grating. Benefitted from the optimized materials and low waveguide loss, very low threshold current density of 0.5 kA/cm2 was obtained for a device with cavity length of 2 mm. Combined with the partial-high-reflection coating, the 1-mm-long DFB QCL achieved low power-consumption continuous wave (CW) operation up to 105 °C. The CW threshold power-consumptions were 0.72 and 0.78 W at 15 and 25 °C, respectively. The maximum CW output power was over 110 mW at 15 °C and still more than 35 mW at 105 °C. At 15 °C, wall-plug efficiency of 5.5% and slope efficiency of 1.8 W/A were deduced, which were very high for low power-consumption DFB QCLs.

Theoretical model predictions and experimental results for a wavelength switchable Tm:YAG laser.

PubMed

Niu, Yanxiong; Wang, Caili; Liu, Wenwen; Niu, Haisha; Xu, Bing; Man, Da

2014-07-01

We present a theoretical model study of a quasi-three-level laser with particular attention given to the Tm:YAG laser. The oscillating conditions of this laser were theoretically analyzed from the point of the pump threshold while taking into account reabsorption loss. The laser oscillation at 2.02 μm with large stimulated emission sections was suppressed by selecting the appropriate coating for the cavity mirrors, then an efficient laser-diode side-pumped continuous-wave Tm:YAG crystal laser operating at 2.07 μm was realized. Experiments with the Tm:YAG laser confirmed the accuracy of the model, and the model was able to accurately predict that the high Stark sub-level within the H3₆ ground state manifold has a low laser threshold and long laser wavelength, which was achieved by decreasing the transmission of the output coupler.

Finesse of transparent tissue cutting by ultrafast lasers at various wavelengths.

PubMed

Wang, Jenny; Schuele, Georg; Palanker, Daniel

2015-01-01

Transparent ocular tissues, such as the cornea and crystalline lens, can be ablated or dissected using short-pulse lasers. In refractive and cataract surgeries, the cornea, lens, and lens capsule can be cut by producing dielectric breakdown in the focus of a near-infrared (IR) femtosecond laser, which results in explosive vaporization of the interstitial water, causing mechanical rupture of the surrounding tissue. Here, we compare the texture of edges of lens capsule cut by femtosecond lasers with IR and ultraviolet (UV) wavelengths and explore differences in interactions of these lasers with biological molecules. Scanning electron microscopy indicates that a 400-nm laser is capable of producing very smooth cut edges compared to 800 or 1030 nm at a similar focusing angle. Using gel electrophoresis and liquid chromatography/mass spectrometry, we observe laser-induced nonlinear breakdown of proteins and polypeptides by 400-nm femtosecond pulses above and below the dielectric breakdown threshold. On the other hand, 800-nm femtosecond lasers do not produce significant dissociation even above the threshold of dielectric breakdown. However, despite this additional interaction of UV femtosecond laser with proteins, we determine that efficient cutting requires plasma-mediated bubble formation and that remarkably smooth edges are the result of reduced thresholds and smaller focal volume.

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirch, J. D.; Chang, C.-C.; Boyle, C.

2015-02-09

Five, 8.36 μm-emitting quantum-cascade lasers (QCLs) have been monolithically phase-locked in the in-phase array mode via resonant leaky-wave coupling. The structure is fabricated by etch and regrowth which provides large index steps (Δn = 0.10) between antiguided-array elements and interelement regions. Such high index contrast photonic-crystal (PC) lasers have more than an order of magnitude higher index contrast than PC-distributed feedback lasers previously used for coherent beam combining in QCLs. Absorption loss to metal layers inserted in the interelement regions provides a wide (∼1.0 μm) range in interelement width over which the resonant in-phase mode is strongly favored to lase. Room-temperature, in-phase-mode operation withmore » ∼2.2 kA/cm{sup 2} threshold-current density is obtained from 105 μm-wide aperture devices. The far-field beam pattern has lobewidths 1.65× diffraction limit (D.L.) and 82% of the light in the main lobe, up to 1.8× threshold. Peak pulsed near-D.L. power of 5.5 W is obtained, with 4.5 W emitted in the main lobe. Means of how to increase the device internal efficiency are discussed.« less

Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm

NASA Astrophysics Data System (ADS)

Saidi, Hosni; Msahli, Melek; Ben Dhafer, Rania; Ridene, Said

2017-12-01

Band structure and optical gain properties of [111]-oriented AlGaInAs/AlGaInAs-delta-InGaAs multi-quantum wells, subjected to piezoelectric field, for the near-infrared lasers diodes applications was proposed and investigated in this paper. By using genetic algorithm based on optimization technique we demonstrate that the structural parameters can be conveniently optimized to achieve high-efficiency laser diode performance at room temperature. In this work, significant optical gain for the wished emission wavelength at 1.55 μm and low threshold injection current are the optimization target. The end result of this optimization is a laser diode based on InP substrate using quaternary compound material of AlGaInAs in both quantum wells and barriers with different composition. It has been shown that the transverse electric polarized optical gain which reaches 3500 cm-1 may be acquired for λ = 1.55 μm with a threshold carrier density Nth≈1.31018cm-3, which is very promising to serve as an alternative active region for high-efficiency near-infrared lasers. Finally, from the design presented here, we show that it is possible to apply this technique to a different III-V compound semiconductors and wavelength ranging from deep-ultra-violet to far infrared.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bachman, D., E-mail: bachman@ualberta.ca; Fedosejevs, R.; Tsui, Y. Y.

An optical damage threshold for crystalline silicon from single femtosecond laser pulses was determined by detecting a permanent change in the refractive index of the material. This index change could be detected with unprecedented sensitivity by measuring the resonant wavelength shift of silicon integrated optics microring resonators irradiated with femtosecond laser pulses at 400 nm and 800 nm wavelengths. The threshold for permanent index change at 400 nm wavelength was determined to be 0.053 ± 0.007 J/cm{sup 2}, which agrees with previously reported threshold values for femtosecond laser modification of crystalline silicon. However, the threshold for index change at 800 nm wavelength was found to be 0.044 ± 0.005 J/cm{supmore » 2}, which is five times lower than the previously reported threshold values for visual change on the silicon surface. The discrepancy is attributed to possible modification of the crystallinity of silicon below the melting temperature that has not been detected before.« less

A Search for Laser Emission with Megawatt Thresholds from 5600 FGKM Stars

NASA Astrophysics Data System (ADS)

Tellis, Nathaniel K.; Marcy, Geoffrey W.

2017-06-01

We searched high-resolution spectra of 5600 nearby stars for emission lines that are both inconsistent with a natural origin and unresolved spatially, as would be expected from extraterrestrial optical lasers. The spectra were obtained with the Keck 10 m telescope, including light coming from within 0.5 arcsec of the star, corresponding typically to within a few to tens of astronomical units of the star, and covering nearly the entire visible wavelength range from 3640 to 7890 Å. We establish detection thresholds by injecting synthetic laser emission lines into our spectra and blindly analyzing them for detections. We compute flux density detection thresholds for all wavelengths and spectral types sampled. Our detection thresholds for the power of the lasers themselves range from 3 kW to 13 MW, independent of distance to the star but dependent on the competing “glare” of the spectral energy distribution of the star and on the wavelength of the laser light, launched from a benchmark, diffraction-limited 10 m class telescope. We found no such laser emission coming from the planetary region around any of the 5600 stars. Because they contain roughly 2000 lukewarm, Earth-size planets, we rule out models of the Milky Way in which over 0.1% of warm, Earth-size planets harbor technological civilizations that, intentionally or not, are beaming optical lasers toward us. A next-generation spectroscopic laser search will be done by the Breakthrough Listen initiative, targeting more stars, especially stellar types overlooked here including spectral types O, B, A, early F, late M, and brown dwarfs, and astrophysical exotica.

Discharge stabilization studies of CO laser gas mixtures in quasi-steady supersonic flow

NASA Technical Reports Server (NTRS)

Srinivasan, G.; Smith, J. A.

1976-01-01

Experiments were conducted to study the applicability of a double discharge stabilization scheme in conditions appropriate for high energy CO lasers in supersonic flows. A Ludwieg tube impulse flow facility and a ballasted capacitor bank provided essentially steady flow and discharge conditions (d.c.) for times longer than ten electrode length-flow transit times. Steady, arc-free, volume discharges were produced in a Mach 3 test cavity using an auxiliary discharge to stabilize the main discharge in N2 and He/CO mixture. A signigicant result is the lack of observed plasma E/N changes in response to auxiliary discharge current changes. Also, where glow discharges were obtained, the energy loading achieved was very much less than the threshold level required for laser operation.

Monolithically integrated distributed feedback laser array wavelength-selectable light sources for WDM-PON application

NASA Astrophysics Data System (ADS)

Chen, Xin; Zhao, Jianyi; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen

2015-01-01

The monolithic integration of 1.5-μm four channels phase shift distributed feedback lasers array (DFB-LD array) with 4×1 multi-mode interference (MMI) optical combiner is demonstrated. A home developed process mainly consists of butt-joint regrowth (BJR) and simultaneous thermal and ultraviolet nanoimprint lithography (STU-NIL) is implemented to fabricate gratings and integrated devices. The threshold currents of the lasers are less than 10 mA and the side mode suppression ratios (SMSR) are better than 40 dB for all channels. Quasi-continuous tuning is realized over 7.5 nm wavelength region with the 30 °C temperature variation. The results indicate that the integration device we proposed can be used in wavelength division multiplexing passive optical networks (WDM-PON).

Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

NASA Technical Reports Server (NTRS)

Qui, Y.; Uhl, D.; Keo, S.

2003-01-01

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Polarization mode control of long-wavelength VCSELs by intracavity patterning

DOE PAGES

Long, Christopher Michael; Mickovic, Zlatko; Dwir, Benjamin; ...

2016-04-26

Polarization mode control is enhanced in wafer-fused vertical-cavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces birefringence and dichroism, which discriminates between the two polarization states of the fundamental transverse modes. We find that the cavity modifications define the polarization angle at threshold with respect to the crystal axes, and increase the gain anisotropy and birefringence on average, leading to an increase in the polarization switching current. As a result, experimental measurements are explained using the spin-flip model of VCSEL polarization dynamics.

Epidermal protection with cryogen spray cooling during high fluence pulsed dye laser irradiation: an ex vivo study.

PubMed

Tunnell, J W; Nelson, J S; Torres, J H; Anvari, B

2000-01-01

Higher laser fluences than currently used in therapy (5-10 J/cm(2)) are expected to result in more effective treatment of port wine stain (PWS) birthmarks. However, higher incident fluences increase the risk of epidermal damage caused by absorption of light by melanin. Cryogen spray cooling offers an effective method to reduce epidermal injury during laser irradiation. The objective of this study was to determine whether high laser incident fluences (15-30 J/cm(2)) could be used while still protecting the epidermis in ex vivo human skin samples. Non-PWS skin from a human cadaver was irradiated with a Candela ScleroPlus Laser (lambda = 585 nm; pulse duration = 1.5 msec) by using various incident fluences (8-30 J/cm(2)) without and with cryogen spray cooling (refrigerant R-134a; spurt durations: 40-250 msec). Assessment of epidermal damage was based on histologic analysis. Relatively short spurt durations (40-100 msec) protected the epidermis for laser incident fluences comparable to current therapeutic levels (8-10 J/cm(2)). However, longer spurt durations (100-250 msec) increased the fluence threshold for epidermal damage by a factor of three (up to 30 J/cm(2)) in these ex vivo samples. Results of this ex vivo study show that epidermal protection from high laser incident fluences can be achieved by increasing the cryogen spurt duration immediately before pulsed laser exposure. Copyright 2000 Wiley-Liss, Inc.

Nano-material size dependent laser-plasma thresholds

NASA Astrophysics Data System (ADS)

EL Sherbini, Ashraf M.; Parigger, Christian G.

2016-10-01

The reduction of laser fluence for initiation of plasma was measured for zinc monoxide nanoparticles of diameters in the range of 100 to 20 nm. In a previous work by EL Sherbini and Parigger [Wavelength Dependency and Threshold Measurements for Nanoparticle-enhanced Laser-induced Breakdown Spectroscopy, Spectrochim. Acta Part B 116 (2016) 8-15], the hypothesis of threshold dependence on particle size leads to the interpretation of the experiments for varying excitation wavelengths with fixed, 30 nm nanomaterial. The experimental results presented in this work were obtained with 1064 nm Nd:YAG radiation and confirm and validate the suspected reduction due to quenching of the thermal conduction length to the respective sizes of the nanoparticles.

Toward power scaling in an acetylene mid-infrared hollow-core optical fiber gas laser: effects of pressure, fiber length, and pump power

NASA Astrophysics Data System (ADS)

Weerasinghe, H. W. Kushan; Dadashzadeh, Neda; Thirugnanasambandam, Manasadevi P.; Debord, Benoît.; Chafer, Matthieu; Gérôme, Frédéric; Benabid, Fetah; Corwin, Kristan L.; Washburn, Brian R.

2018-02-01

The effect of gas pressure, fiber length, and optical pump power on an acetylene mid-infrared hollow-core optical fiber gas laser (HOFGLAS) is experimentally determined in order to scale the laser to higher powers. The absorbed optical power and threshold power are measured for different pressures providing an optimum pressure for a given fiber length. We observe a linear dependence of both absorbed pump energy and lasing threshold for the acetylene HOFGLAS, while maintaining a good mode quality with an M-squared of 1.15. The threshold and mode behavior are encouraging for scaling to higher pressures and pump powers.

Threshold ionization spectroscopic investigation of supersonic jet-cooled, laser-desorbed Tryptophan

NASA Astrophysics Data System (ADS)

Taherkhani, Mehran; Armentano, Antonio; Černý, Jiří; Müller-Dethlefs, Klaus

2016-07-01

Tryptophan (Trp) was studied by two-colour Photoionization Efficiency (PIE) and Mass Analysed Threshold Ionization (MATI) spectroscopy using a laser desorption apparatus. Conformer A of Trp was excited into the S1 state (34,878 cm-1) and the second laser was scanned around the D0 cation ground and the D1 excited state. No ionization signal into the D0 state could be found, but a clear threshold was observed for the D1 state with an ionization energy of 66,704 ± 3 cm-1 (8.27 eV). This observation is explained in terms of the electronic configurations of the S1 and cationic states.

Bubble formation during pulsed laser ablation: mechanism and implications

NASA Astrophysics Data System (ADS)

van Leeuwen, Ton G. J. M.; Jansen, E. Duco; Motamedi, Massoud; Welch, Ashley J.; Borst, Cornelius

1993-07-01

Holmium ((lambda) equals 2.09 micrometers ) and excimer ((lambda) equals 308 nm) lasers are used for ablation of tissue. In a previous study it was demonstrated that both excimer and holmium laser pulses produce fast expanding and collapsing vapor bubbles. To investigate whether the excimer induced bubble is caused by vaporization of water, the threshold fluence for bubble formation at a bare fiber tip in water was compared between the excimer laser (pulse length 115 ns) and the Q-switched and free-running holmium lasers (pulse length 1 microsecond(s) to 250 microsecond(s) , respectively). To induce bubble formation by excimer laser light in water, the absorber oxybuprocaine-hydrochloride (OBP-HCl) was added to the water. Fast flash photography was used to measure the threshold fluence as a function of the water temperature (6 - 90 degree(s)C) at environmental pressure. The ultraviolet excimer laser light is strongly absorbed by blood. Therefore, to document the implications of bubble formation at fluences above the tissue ablation threshold, excimer laser pulses were delivered in vitro in hemoglobin solution and in vivo in the femoral artery of the rabbit. We conclude that the principal content of the fast bubble induced by a 308 nm excimer laser pulse is water vapor. Therefore, delivery of excimer laser pulses in a water or blood environment will cause fast expanding water vapor bubbles, which may induce mechanical damage to adjacent tissue.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

NASA Astrophysics Data System (ADS)

Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2015-01-01

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

Theory and simulation of multi-channel interference (MCI) widely tunable lasers.

PubMed

Chen, Quanan; Lu, Qiaoyin; Guo, Weihua

2015-07-13

A novel design of an InP-based monolithic widely tunable laser, multi-channel interference (MCI) laser, is proposed and presented for the first time. The device is comprised of a gain section, a common phase section and a multi-channel interference section. The multi-channel interference section contains a 1x8 splitter based on cascaded 1 × 2 multi-mode interferometers (MMIs) and eight arms with unequal length difference. The rear part of each arm is integrated with a one-port multi-mode interference reflector (MIR). Mode selection of the MCI laser is realized by the constructive interference of the lights reflected back by the eight arms. Through optimizing the arm length difference, a tuning range of more than 40 nm covering the whole C band, a threshold current around 11.5 mA and an side-mode-suppression-ratio (SMSR) up to 48 dB have been predicted for this widely tunable laser. Detailed design principle and numerical simulation results are presented.

Type-I interband cascade lasers near 3.2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Yuchao; Li, Lu; Yang, Rui Q., E-mail: Rui.Q.Yang@ou.edu

2015-01-26

Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasersmore » were around 300 A/cm{sup 2} at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed.« less

Damage Thresholds for Exposure to NIR and Blue Lasers in an In Vitro RPE Cell System

DTIC Science & Technology

2006-07-01

damage , and to identify antioxidants capable of protecting these cells from laser-in- duced cell death. MATERIALS AND METHODS The human RPE cell...melanosomes in blue laser-induced damage in vitro, which confirms the view that melanin plays an important role in photochemical damage mechanisms in...community has only a validating role in the animal ED50 damage threshold data used by safety committees. Systems of in vitro analysis must be

Hollow fiber optics with improved durability for high-peak-power pulses of Q-switched Nd:YAG lasers.

PubMed

Matsuura, Yuji; Tsuchiuchi, Akio; Noguchi, Hiroshi; Miyagi, Mitsunobu

2007-03-10

To improve the damage threshold of hollow optical waveguides for transmitting Q-switched Nd:YAG laser pulses, we optimize the metallization processes for the inner coating of fibers. For silver-coated hollow fiber as the base, second, and third Nd:YAG lasers, drying silver films at a moderate temperature and with inert gas flow is found to be effective. By using this drying process, the resistance to high-peak-power optical pulse radiation is drastically improved for fibers fabricated with and without the sensitizing process. The maximum peak power transmitted in the fiber is greater than 20 MW. To improve the energy threshold of aluminum-coated hollow fibers for the fourth and fifth harmonics of Nd:YAG lasers, a thin silver film is added between the aluminum film and the glass substrate to increase adhesion of the aluminum coating. By using this primer layer, the power threshold improves to 3 MW for the fourth harmonics of a Q-switched Nd:YAG laser light.

Repetition rate dependency of low-density plasma effects during femtosecond-laser-based surgery of biological tissue

NASA Astrophysics Data System (ADS)

Kuetemeyer, K.; Baumgart, J.; Lubatschowski, H.; Heisterkamp, A.

2009-11-01

Femtosecond laser based nanosurgery of biological tissue is usually done in two different regimes. Depending on the application, low kHz repetition rates above the optical breakdown threshold or high MHz repetition rates in the low-density plasma regime are used. In contrast to the well understood optical breakdown, mechanisms leading to dissection below this threshold are not well known due to the complexity of chemical effects with high numbers of interacting molecules. Furthermore, the laser repetition rate may influence their efficiency. In this paper, we present our study on low-density plasma effects in biological tissue depending on repetition rate by static exposure of porcine corneal stroma to femtosecond pulses. We observed a continuous increase of the laser-induced damage with decreasing repetition rate over two orders of magnitude at constant numbers of applied laser pulses or constant laser pulse energies. Therefore, low repetition rates in the kHz regime are advantageous to minimize the total delivered energy to biological tissue during femtosecond laser irradiation. However, due to frequent excessive damage in this regime directly above the threshold, MHz repetition rates are preferable to create nanometer-sized cuts in the low-density plasma regime.

Generation, and applications of stable, 100-500-MeV, dark-current-free beams, from a laser-wakefield accelerator

NASA Astrophysics Data System (ADS)

Banerjee, Sudeep

2011-10-01

This talk will report the production of high energy, quasi-monoenergetic electron bunches without the low-energy electron background that is typically detected from self-injected laser-wakefield accelerators. These electron bunches are produced when the accelerator is operated in the blowout regime, and the laser and plasma parameters are optimized. High-contrast, high power (30-60 TW) and ultra-short-duration (30 fs) laser pulses are focused onto He-gas-jet targets. The high energy (300-400 MeV) monoenergetic (energy spread < 10%) beams are characterized by 1-4-mrad divergence, pointing stability of 1-2 mrad, and a few-percent shot-to-shot fluctuation of peak energy. The results are scalable: the beam energy can be tuned by appropriate choice of acceleration length, laser power and plasma density. Three-dimensional particle-in-cell simulations show that these electron beams are generated when the accelerator is operated near the self-injection threshold, which suppresses dark current (continuous injection in the first bucket). Suppression of dark current is required to minimize noise, improve the quality of secondary radiation sources, and minimize shielding requirements for high repetition-rate operation. Also reported, is the application of this novel electron-beam source to radiography of dense objects with sub-millimeter spatial resolution. In this case, the energetic electron beam is incident on a 2''-thick steel target with embedded voids, which are detected with image plates. Current progress on the generation of GeV energy electron beams with petawatt peak power laser pulses, from the upgraded DIOCLES laser system, will also be discussed. Work supported by U. S. DOE grants DEFG02-05ER15663, DE-FG02-08ER55000; DARPA grant FA9550-09-1-0009; DTRA grant HDTRA1-11-C-0001 and, DHS grant 2007-DN-007-ER0007-02. The laser is supported by AFOSR contracts FA 9550-08-1-0232, FA9550-07-1-0521.

Development of high damage threshold multilayer thin film beam combiner for laser application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nand, Mangla, E-mail: mnand@rrcat.gov.in; Babita,; Jena, S.

2016-05-23

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm{sup 2} at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Development of high damage threshold multilayer thin film beam combiner for laser application

NASA Astrophysics Data System (ADS)

Nand, Mangla; Babita, Jena, S.; Tokas, R. B.; Rajput, P.; Mukharjee, C.; Thakur, S.; Jha, S. N.; Sahoo, N. K.

2016-05-01

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm2 at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

A low-threshold, high-efficiency microfluidic waveguide laser.

PubMed

Vezenov, Dmitri V; Mayers, Brian T; Conroy, Richard S; Whitesides, George M; Snee, Preston T; Chan, Yinthai; Nocera, Daniel G; Bawendi, Moungi G

2005-06-29

This communication describes a long (1 cm), laser-pumped, liquid core-liquid cladding (L2) waveguide laser. This device provides a simple, high intensity, tunable light source for microfludic applications. Using a core solution of 2 mM rhodamine 640 perchlorate, optically pumped by a frequency-doubled Nd:YAG laser, we found that the threshold for lasing was as low as 22 muJ (16-ns pulse length) and had a slope efficiency up to 20%. The output wavelength was tunable over a 20-nm range by changing the ratio of solvent components (dimethyl sulfoxide and methanol) in the liquid core.

Plasma ignition thresholds in UV laser ablation plumes

NASA Astrophysics Data System (ADS)

Clarke, P.; Dyer, P. E.; Key, P. H.; Snelling, H. V.

Ultraviolet (UV) laser thresholds for plasma ignition on solid targets predicted from electron-neutral collisional heating are generally much higher than those observed experimentally. This inconsistency was reconciled by Rosen, et al. [2], who showed that excited-state photoionization played a key role in long-pulse UV laser breakdown. Here we develop a related model but with emphasis on pulses of 10 ns duration. Experimental results are also reported for titanium, copper, silicon, and ferulic acid targets in vacuum, irradiated with combinations of the XeF, KrF, and ArF lasers for comparison with predictions.

Visible lesion thresholds and model predictions for Q-switched 1318-nm and 1540-nm laser exposures to porcine skin

NASA Astrophysics Data System (ADS)

Zohner, Justin J.; Schuster, Kurt J.; Chavey, Lucas J.; Stolarski, David J.; Kumru, Semih S.; Rockwell, Benjamin A.; Thomas, Robert J.; Cain, Clarence P.

2006-02-01

Skin damage thresholds were measured and compared with theoretical predictions using a skin thermal model for near-IR laser pulses at 1318 nm and 1540 nm. For the 1318-nm data, a Q-switched, 50-ns pulse with a spot size of 5 mm was applied to porcine skin and the damage thresholds were determined at 1 hour and 24 hours postexposure using Probit analysis. The same analysis was conducted for a Q-switched, 30-ns pulse at 1540 nm with a spot size of 5 mm. The Yucatan mini-pig was used as the skin model for human skin due to its similarity to pigmented human skin. The ED 50 for these skin exposures at 24 hours postexposure was 10.5 J/cm2 for the 1318-nm exposures, and 6.1 J/cm2 for the 1540-nm exposures. These results were compared to thermal model predictions. We show that the thermal model fails to account for the ED 50 values observed. A brief discussion of the possible causes of this discrepancy is presented. These thresholds are also compared with previously published skin minimum visible lesion (MVL) thresholds and with the ANSI Standard's MPE for 1318-nm lasers at 50 ns and 1540-nm lasers at 30 ns.

Retinal injury thresholds for 532, 578, and 630 nm lasers in connection to photodynamic therapy for choroidal neovascularization.

PubMed

Chen, Hongxia; Yang, Zaifu; Zou, Xianbiao; Wang, Jiarui; Zhu, Jianguo; Gu, Ying

2014-01-01

The purpose of this study was to explore the retinal injury thresholds in rabbits and evaluate the influence of retinal pigmentation on threshold irradiance at laser wavelengths of 532, 578, and 630 nm which might be involved in hypocrellin B (HB) and hematoporphyrin monomethyl ether (HMME) photodynamic therapy (PDT) for choroidal neovascularization (CNV). The eyes of pigmented and non-pigmented rabbits were exposed to 532, 578, and 630 nm lasers coupled to a slit lamp biological microscope. The exposure duration was 100 seconds and the retinal spot size was 2 mm throughout the experiment. The minimum visible lesions were detected by funduscopy at 1 and 24 hours post exposure. Bliss probit analysis was performed to determine the ED50 thresholds, fiducial limits and probit slope. In pigmented rabbits, the 24-hour retinal threshold irradiances at 532, 578, and 630 nm were 1,003, 1,475, and 1,720 mW/cm(2) , respectively. In non-pigmented rabbits, the 24-hour threshold irradiances were 1,657, 1,865, and 15,360 mW/cm(2) , respectively. The ED50 for 24-hour observation differed very little from the ED50 for 1-hour observation. The non-pigmented rabbits required a ninefold increase in threshold irradiance at 630 nm comparing to the pigmented rabbits. This study will contribute to the knowledge base for the limits of laser irradiance in application of HB or HMME PDT for CNV. © 2013 Wiley Periodicals, Inc.

Laser Wakefield Acceleration Experiments Using HERCULES Laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsuoka, T.; McGuffey, C.; Dollar, F.

2009-07-25

Laser wakefield acceleration (LWFA) in a supersonic gas-jet using a self-guided laser pulse was studied by changing laser power and plasma electron density. The recently upgraded HERCULES laser facility equipped with wavefront correction enables a peak intensity of 6.1x10{sup 19} W/cm{sup 2} at laser power of 80 TW to be delivered to the gas-jet using F/10 focusing optics. We found that electron beam charge was increased significantly with an increase of laser power from 30 TW to 80 TW and showed density threshold behavior at a fixed laser power. We also studied the influence of laser focusing conditions by changingmore » the f-number of the optics to F/15 and found an increase in density threshold for electron production compared to the F/10 configuration. The analysis of different phenomena such as betatron motion of electrons, side scattering of the laser pulse for different focusing conditions, the influence of plasma density down ramp on LWFA are shown.« less

Exploring the Mechanisms of Exercise-Induced Hypoalgesia Using Somatosensory and Laser Evoked Potentials.

PubMed

Jones, Matthew D; Taylor, Janet L; Booth, John; Barry, Benjamin K

2016-01-01

Exercise-induced hypoalgesia is well described, but the underlying mechanisms are unclear. The aim of this study was to examine the effect of exercise on somatosensory evoked potentials, laser evoked potentials, pressure pain thresholds and heat pain thresholds. These were recorded before and after 3-min of isometric elbow flexion exercise at 40% of the participant's maximal voluntary force, or an equivalent period of rest. Exercise-induced hypoalgesia was confirmed in two experiments (Experiment 1-SEPs; Experiment 2-LEPs) by increased pressure pain thresholds at biceps brachii (24.3 and 20.6% increase in Experiment 1 and 2, respectively; both d > 0.84 and p < 0.001) and first dorsal interosseous (18.8 and 21.5% increase in Experiment 1 and 2, respectively; both d > 0.57 and p < 0.001). In contrast, heat pain thresholds were not significantly different after exercise (forearm: 10.8% increase, d = 0.35, p = 0.10; hand: 3.6% increase, d = 0.06, p = 0.74). Contrasting effects of exercise on the amplitude of laser evoked potentials (14.6% decrease, d = -0.42, p = 0.004) and somatosensory evoked potentials (10.9% increase, d = -0.02, p = 1) were also observed, while an equivalent period of rest showed similar habituation (laser evoked potential: 7.3% decrease, d = -0.25, p = 0.14; somatosensory evoked potential: 20.7% decrease, d = -0.32, p = 0.006). The differential response of pressure pain thresholds and heat pain thresholds to exercise is consistent with relative insensitivity of thermal nociception to the acute hypoalgesic effects of exercise. Conflicting effects of exercise on somatosensory evoked potentials and laser evoked potentials were observed. This may reflect non-nociceptive contributions to the somatosensory evoked potential, but could also indicate that peripheral nociceptors contribute to exercise-induced hypoalgesia.

Lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Arakawa, Yasuhiko

2017-02-01

Nanowire (NW) lasers have recently attracted increasing attention as ultra-small, highly-efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of single NW lasers utilizing bulk materials, it is crucial to incorporate lower-dimensional quantum nanostructures into the NW in order to achieve superior device performance with respect to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot (QD) is a useful and essential nanostructure that can meet these requirements. In this presentation, we will talk about our recent research activity regarding room temperature lasing of a single GaAs NW containing 50-stacked In0.2Ga0.8As/GaAs QDs. The NW cavities consist of multiple In0.2Ga0.8As/GaAs heterostructures acting as a QD active material, which are grown on shallow (<45 nm) GaAs core NWs and followed by GaAs/Al0.1Ga0.9As/GaAs core/shell/cap structures. Lasing oscillation is achieved at the emission wavelength of 900 nm by properly designing the NW cavity and tailoring the emission energy of each QD to enhance the optical gain. Obtained threshold pump pulse fluence is 179 μJ/cm2 at room temperature and the characteristics temperature is 133K which is higher than that of conventional bulk NW lasers. Our demonstration paves the way toward ultra-small lasers with extremely low-power consumption for integrated photonic systems. Furthermore, we will discuss our recent results on the demonstration of several types of NWQD lasers in order to improve the device performance of the NWQD lasers.

Low amplified spontaneous emission threshold and suppression of electroluminescence efficiency roll-off in layers doped with ter(9,9′-spirobifluorene)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inoue, Munetomo; Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395; Matsushima, Toshinori

2016-03-28

We demonstrate that ter(9,9′-spirobifluorene) (TSBF) doped in a host matrix layer of 4,4′-bis(carbazol-9-yl)biphenyl (CBP) shows a low amplified spontaneous emission (ASE) threshold (E{sub th} = 1.0 μJ cm{sup −2}) and suppressed electroluminescence efficiency roll-off at high current densities (no roll-off up to 100 mA cm{sup −2}). One origin of the low ASE threshold is that the TSBF-doped CBP layer possesses a very large radiative decay constant (k{sub r} = 1.1 × 10{sup 9 }s{sup −1}). Singlet–triplet annihilation is almost suppressed in the TSBF-doped CBP layer, which can be ascribed to the small overlap between the emission and triplet absorption of TSBF. Also, the small energy level difference between TSBF and CBPmore » minimizes carrier trapping in TSBF, leading to the suppression of singlet–polaron annihilation. TSBF showed one of the lowest E{sub th} and the most suppressed efficiency roll-off among organic laser dyes investigated in this study and, therefore, is believed to be a promising candidate to realize electrically pumped organic semiconductor laser diodes in the future.« less

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-08-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ˜3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ˜550 μW, compared to ˜80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

Ultraprecise medical applications with ultrafast lasers: corneal surgery with femtosecond lasers

NASA Astrophysics Data System (ADS)

Loesel, Frieder H.; Kurtz, Ron M.; Horvath, Christopher; Sayegh, Samir I.; Mourou, Gerard A.; Bille, Josef F.; Juhasz, Tibor

1999-02-01

We investigated refractive corneal surgery in vivo and in vitro by intrastromal photodisruption using a compact ultrafast femtosecond laser system. Ultrashort-pulsed lasers operating in the femtosecond time regime are associated with significantly smaller and deterministic threshold energies for photodisruption, as well as reduced shock waves and smaller cavitation bubbles than the nanosecond or picosecond lasers. Our reliable all-solid-state laser system was specifically designed for real world medical applications. By scanning the 5 micron focus spot of the laser below the corneal surface, the overlapping small ablation volumes of single pulses resulted in contiguous tissue cutting and vaporization. Pulse energies were typically in the order of a few microjoules. Combination of different scanning patterns enabled us to perform corneal flap cutting, femtosecond-LASIK, and femtosecond intrastromal keratectomy in porcine, rabbit, and primate eyes. The cuts proved to be highly precise and possessed superior dissection and surface quality. Preliminary studies show consistent refractive changes in the in vivo studies. We conclude that the technology is capable to perform a variety of corneal refractive procedures at high precision, offering advantages over current mechanical and laser devices and enabling entirely new approaches for refractive surgery.

Investigation of single lateral mode for 852nm diode lasers with ridge waveguide design

NASA Astrophysics Data System (ADS)

Liu, Chu; Guan, Baolu; Mi, Guoxin; Liao, Yiru; Liu, Zhenyang; Li, Jianjun; Xu, Chen

2016-11-01

852nm Narrow linewidth lasers can be widely used in the field of ultra-fine spectrum measurement, Cs atomic clock control, satellite and optical fiber communication and so on. Furthermore, the stability of the single lateral mode is a very important condition to guarantee the narrow linewidth lasers. Here we investigate experimentally the influence of the narrow ridge structure and asymmetrical waveguide design on the stability single lateral mode of an 852nm diode laser. According to the waveguide theoretical analysis, ridge mesa etch depth (Δη , related to the refractive index difference of parallel to the junction) and ridge mesa width (the narrower the more control force to low order mode) are the main elements for lateral modes. In this paper, we designed different structures to investigate and verify major factors for lateral mode by experiment, and to confirm our thought. Finally, the 5μm mesa ridge laser, 800nm etch depth, with groove structure obtains excellent steady single lateral mode output by 150mA operating current and 30°C temperature. The optical spectrum FWHM is 0.5nm and side mode suppression ratio is 27dBm with uncoated. The laser with 1mm cavity length showed the threshold current of 50mA, a lasing wavelength of λ = 852.6nm, slope efficiency of above 0.7mW/mA. We accomplished single lateral mode of ridge waveguide edge-emitting lasers which can also be used as a laser source in the ultra-narrow linewidth external cavity laser system.

Current role of cryotherapy in retinopathy of prematurity: a report by the American Academy of Ophthalmology.

PubMed

Simpson, Jennifer L; Melia, Michele; Yang, Michael B; Buffenn, Angela N; Chiang, Michael F; Lambert, Scott R

2012-04-01

To evaluate the role of cryotherapy in the current treatment of retinopathy of prematurity (ROP). Literature searches of PubMed and the Cochrane Library were conducted on December 2, 2009, for articles published after 1984. The searches included all languages and retrieved 187 relevant citations. Thirteen articles were deemed relevant to the assessment question and were rated according to the strength of evidence. Four articles reported results from 2 large multicenter randomized clinical trials, and the remaining 9 articles reported results of 3 small randomized trials that directly compared cryotherapy and laser. Neither of the multicenter randomized clinical trials was a direct comparison of cryotherapy with laser. These studies were used to evaluate the comparative trials based on treatment criteria, study populations, and clinical results. Higher percentages of poor structural and functional outcomes generally were seen in eyes treated with cryotherapy compared with eyes undergoing laser treatment. Higher rates of systemic complications and myopia also were identified after treatment with cryotherapy. Despite a relative paucity of level I evidence directly comparing cryotherapy and laser treatment for threshold ROP, the literature suggests that neonatal facilities should gain access to laser technology and laser-trained ophthalmic staff to achieve better outcomes for treatment of the disease. Copyright © 2012 American Academy of Ophthalmology. Published by Elsevier Inc. All rights reserved.

Laser-induced damage thresholds of gold, silver and their alloys in air and water

NASA Astrophysics Data System (ADS)

Starinskiy, Sergey V.; Shukhov, Yuri G.; Bulgakov, Alexander V.

2017-02-01

The nanosecond-laser-induced damage thresholds of gold, silver and gold-silver alloys of various compositions in air and water have been measured for single-shot irradiation conditions. The experimental results are analyzed theoretically by solving the heat flow equation for the samples irradiated in air and in water taking into account vapor nucleation at the solid-water interface. The damage thresholds of Au-Ag alloys are systematically lower than those for pure metals, both in air and water that is explained by lower thermal conductivities of the alloys. The thresholds measured in air agree well with the calculated melting thresholds for all samples. The damage thresholds in water are found to be considerably higher, by a factor of ∼1.5, than the corresponding thresholds in air. This cannot be explained, in the framework of the used model, neither by the conductive heat transfer to water nor by the vapor pressure effect. Possible reasons for the high damage thresholds in water such as scattering of the incident laser light by the vapor-liquid interface and the critical opalescence in the superheated water are suggested. Optical pump-probe measurements have been performed to study the reflectance dynamics of the surface irradiated in air and water. Comparison of the transient reflectance signal with the calculated nucleation dynamics provides evidence that the both suggested scattering mechanisms are likely to occur during metal ablation in water.

New method for measuring the laser-induced damage threshold of optical thin film

NASA Astrophysics Data System (ADS)

Su, Jun-hong; Wang, Hong; Xi, Ying-xue

2012-10-01

The laser-induced damage threshold (LIDT) of thin film means that the thin film can withstand a maximum intensity of laser radiation. The film will be damaged when the irradiation under high laser intensity is greater than the value of LIDT. In this paper, an experimental platform with measurement operator interfaces and control procedures in the VB circumstance is built according to ISO11254-1. In order to obtain more accurate results than that with manual measurement, in the software system, a hardware device can be controlled by control widget on the operator interfaces. According to the sample characteristic, critical parameters of the LIDT measurement system such as spot diameter, damage threshold region, and critical damage pixel number are set up on the man-machine conversation interface, which could realize intelligent measurements of the LIDT. According to experimental data, the LIDT is obtained by fitting damage curve automatically.

Data Fitting to Study Ablated Hard Dental Tissues by Nanosecond Laser Irradiation.

PubMed

Al-Hadeethi, Y; Al-Jedani, S; Razvi, M A N; Saeed, A; Abdel-Daiem, A M; Ansari, M Shahnawaze; Babkair, Saeed S; Salah, Numan A; Al-Mujtaba, A

2016-01-01

Laser ablation of dental hard tissues is one of the most important laser applications in dentistry. Many works have reported the interaction of laser radiations with tooth material to optimize laser parameters such as wavelength, energy density, etc. This work has focused on determining the relationship between energy density and ablation thresholds using pulsed, 5 nanosecond, neodymium-doped yttrium aluminum garnet; Nd:Y3Al5O12 (Nd:YAG) laser at 1064 nanometer. For enamel and dentin tissues, the ablations have been performed using laser-induced breakdown spectroscopy (LIBS) technique. The ablation thresholds and relationship between energy densities and peak areas of calcium lines, which appeared in LIBS, were determined using data fitting. Furthermore, the morphological changes were studied using Scanning Electron Microscope (SEM). Moreover, the chemical stability of the tooth material after ablation has been studied using Energy-Dispersive X-Ray Spectroscopy (EDX). The differences between carbon atomic % of non-irradiated and irradiated samples were tested using statistical t-test. Results revealed that the best fitting between energy densities and peak areas of calcium lines were exponential and linear for enamel and dentin, respectively. In addition, the ablation threshold of Nd:YAG lasers in enamel was higher than that of dentin. The morphology of the surrounded ablated region of enamel showed thermal damages. For enamel, the EDX quantitative analysis showed that the atomic % of carbon increased significantly when laser energy density increased.

Surface-emitting mid-infrared quantum cascade lasers with high-contrast photonic crystal resonators.

PubMed

Xu, Gangyi; Colombelli, Raffaele; Braive, Remy; Beaudoin, Gregoire; Le Gratiet, Luc; Talneau, Anne; Ferlazzo, Laurence; Sagnes, Isabelle

2010-05-24

We have developed surface-emitting single-mode quantum cascade lasers which employ high-contrast photonic-crystal resonators. The devices operate on band-edge states of the photonic band-structure. The mode profile and polarization characteristics of the band-edge modes are calculated by three-dimensional finite-difference time-domain simulation. Experimentally, the spectral properties, the far-field patterns, and the polarization characteristics of the lasers are determined and compared with simulations. The good agreement between the simulations and the experiments confirms that the hexapolar mode at the Gamma-point band-edge gives rise to lasing. By using a novel and advanced fabrication method, deep and vertical PhC holes are fabricated with no metal redeposition on the sidewalls, which improves the laser performance with respect to the current status. The angular of the output beam is approximately 15 masculine, and the side mode suppression ratio of the single mode emission is about 25 dB. The threshold current density at 78 K and the maximum operation temperature are 7.6 kA/cm2 and 220 K, respectively. The performance is mainly limited by the loss induced by surface plasmon waveguide, which can be overcome by using an optimized dielectric waveguide structure.

Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers

NASA Astrophysics Data System (ADS)

Chen, J. X.; Li, A. Z.; Chen, Y. Q.; Guo, F. M.; Lin, C.; Zhang, Y. G.; Qi, M.

2001-07-01

Lasers with emission wavelength of 1.8-2.1 μm offer many important applications to laser spectroscopy, eye-safe medical care and trace chemical detection. Strained InGaAs/InGaAsP structures on InP substrates have been reported as an alternative approach for the development of semiconductor laser diodes in the spectral range 1.8-2.1 μm due to the superior InP substrate quality and mature processing technology. In this paper we report the fabrication and performances of InGaAs/InGaAsP/InP strained quantum well lasers grown by gas source molecular beam epitaxy. The diodes show good I- V characteristics, and the typical turn-on voltage at room temperature is around 0.4-0.5 V. A threshold current of about 120 mA is achieved for a chip with 500 μm cavity length and 4.5 μm stripe width. The maximum output power with 10% duty cycle is 18 mW. The main peak of the laser spectrum is located at 1.84 μm.

The Influence of Geometrical Structure of AlInGaN Double Quantum Well (DQWs) UV Diode Laser on Its Performance and Operating Parameters

NASA Astrophysics Data System (ADS)

Ghazai, A. J.; Thahab, S. M.; Hassan, H. Abu; Hassan, Z.

2010-07-01

The development of efficient MQWs active regions of quaternary InAlGaN in the ultraviolet (UV) region is an engaging challenge by itself. Demonstrating lasers at such low wavelength will require resolving a number of materials, growth and device design issues. However, the quaternary AlInGaN represents a more versatile material since the bandgap and lattice constant can be independently varied. We report a quaternary AlInGaN double-quantum wells (DQWs) UV laser diode (LDs) study by using the simulation program of Integrated System Engineering-Technical Computer Aided Design (ISE TCAD). Advanced physical models of semiconductor properties were used. In this paper, the enhancement in the performance of AlInGaN laser diode can be achieved by optimizing the laser structure geometry design. The AlInGaN laser diodes operating parameters such as internal quantum efficiency ηi, internal loss αi and transparency threshold current density show effective improvements that contribute to a better performance.

A Search for Laser Emission with Megawatt Thresholds from 5600 FGKM Stars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tellis, Nathaniel K.; Marcy, Geoffrey W., E-mail: Nate.tellis@gmail.com

We searched high-resolution spectra of 5600 nearby stars for emission lines that are both inconsistent with a natural origin and unresolved spatially, as would be expected from extraterrestrial optical lasers. The spectra were obtained with the Keck 10 m telescope, including light coming from within 0.5 arcsec of the star, corresponding typically to within a few to tens of astronomical units of the star, and covering nearly the entire visible wavelength range from 3640 to 7890 Å. We establish detection thresholds by injecting synthetic laser emission lines into our spectra and blindly analyzing them for detections. We compute flux density detectionmore » thresholds for all wavelengths and spectral types sampled. Our detection thresholds for the power of the lasers themselves range from 3 kW to 13 MW, independent of distance to the star but dependent on the competing “glare” of the spectral energy distribution of the star and on the wavelength of the laser light, launched from a benchmark, diffraction-limited 10 m class telescope. We found no such laser emission coming from the planetary region around any of the 5600 stars. Because they contain roughly 2000 lukewarm, Earth-size planets, we rule out models of the Milky Way in which over 0.1% of warm, Earth-size planets harbor technological civilizations that, intentionally or not, are beaming optical lasers toward us. A next-generation spectroscopic laser search will be done by the Breakthrough Listen initiative, targeting more stars, especially stellar types overlooked here including spectral types O, B, A, early F, late M, and brown dwarfs, and astrophysical exotica.« less

Astigmatism and biometric optic components of diode laser-treated threshold retinopathy of prematurity at 9 years of age

PubMed Central

Yang, C-S; Wang, A-G; Shih, Y-F; Hsu, W-M

2013-01-01

Purpose To assess the prevalence of astigmatism and its relationship with biometric optic components in preterm school children with diode laser-treated threshold retinopathy of prematurity (ROP). Methods A prospective, cross-sectional study in which cycloplegic keratometry, refraction, and ultrasound biometric measurement of optic components were performed on 24 consecutive preterm children with diode laser-treated threshold ROP at the age of 9 years. The study results were compared with data on 1021 age-matched full-term control children from a national survey. Results The laser-treated eyes had a mean astigmatism of 3.47 D, with a mean spherical equivalent of −4.49 D. Of the 46 eyes studied, 98% of eyes showed astigmatism ≥0.5 D and 50% had high astigmatism (>3.0 D). Most astigmatic eyes (97.7%) showed with-the-rule astigmatism, with the mean plus cylinder axis at 89.30o. Further correlation analysis showed the astigmatism in refraction was highly correlated with the corneal astigmatism (r=0.921, P<0.001) and the vertical corneal curvature (r=0.405, P=0.005). There was significantly steeper vertical corneal curvature (P=0.003) and flatter horizontal corneal curvature (P=0.031) in eyes with laser-treated ROP when compared with age-matched full-term controls. The eyes with laser-treated ROP also show significantly thicker lens (3.93 mm) and shallower anterior chamber depth (ACD; 2.92 mm) than full-term controls (P<0.001). Conclusions There is significantly higher prevalence and greater magnitude of astigmatism in eyes with laser-treated threshold ROP compared with full-term controls. The steeper vertical corneal curvature component contributes to the increased astigmatism in eyes with laser-treated ROP. PMID:23222565

Effect of oscillator strength and intermediate resonance on the performance of resonant phonon-based terahertz quantum cascade lasers

NASA Astrophysics Data System (ADS)

Fathololoumi, S.; Dupont, E.; Wasilewski, Z. R.; Chan, C. W. I.; Razavipour, S. G.; Laframboise, S. R.; Huang, Shengxi; Hu, Q.; Ban, D.; Liu, H. C.

2013-03-01

We experimentally investigated the effect of oscillator strength (radiative transition diagonality) on the performance of resonant phonon-based terahertz quantum cascade lasers that have been optimized using a simplified density matrix formalism. Our results show that the maximum lasing temperature (Tmax) is roughly independent of laser transition diagonality within the lasing frequency range of the devices under test (3.2-3.7 THz) when cavity loss is kept low. Furthermore, the threshold current can be lowered by employing more diagonal transition designs, which can effectively suppress parasitic leakage caused by intermediate resonance between the injection and the downstream extraction levels. Nevertheless, the current carrying capacity through the designed lasing channel in more diagonal designs may sacrifice even more, leading to electrical instability and, potentially, complete inhibition of the device's lasing operation. We propose a hypothesis based on electric-field domain formation and competition/switching of different current-carrying channels to explain observed electrical instability in devices with lower oscillator strengths. The study indicates that not only should designers maximize Tmax during device optimization but also they should always consider the risk of electrical instability in device operation.

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Interference-threshold storage of optical data

NASA Astrophysics Data System (ADS)

Efimkov, V. F.; Zubarev, I. G.; Kolobrodov, V. V.; Sobolev, V. B.

1989-08-01

A method for the determination of the spatial characteristics of a laser beam is proposed and implemented. This method is based on the interaction of an interference field of two laser beams, which are spatially similar to the one being investigated, with a light-sensitive material characterized by a sensitivity threshold.

Examination of Laser Microprobe Vacuum Ultraviolet Ionization Mass Spectrometry with Application to Mapping Mars Returned Samples

NASA Astrophysics Data System (ADS)

Burton, A. S.; Berger, E. L.; Locke, D. R.; Lewis, E. K.; Moore, J. F.

2018-04-01

Laser microprobe of surfaces utilizing a two laser setup whereby the desorption laser threshold is lowered below ionization, and the resulting neutral plume is examined using 157nm Vacuum Ultraviolet laser light for mass spec surface mapping.

Glancing-angle-deposited magnesium oxide films for high-fluence applications

DOE PAGES

Oliver, J. B.; Smith, C.; Spaulding, J.; ...

2016-06-15

Here, Birefringent magnesium oxide thin films are formed by glancing angle deposition to perform as quarter-wave plates at a wavelength of 351 nm. These films are being developed to fabricate a large aperture distributed-polarization rotator for use in vacuum, with an ultimate laser-damage–threshold goal of up to 12 J/cm 2 for a 5-ns flat-in-time pulse. The laser-damage threshold, ease of deposition, and optical film properties are evaluated. While the measured large-area laser-damage threshold is limited to ~4 J/cm 2 in vacuum, initial results based on small-spot testing in air (>20 J/cm 2) suggest MgO may be suitable with further processmore » development.« less

Low-threshold photonic-band-edge laser using iron-nail-shaped rod array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jae-Hyuck; No, You-Shin; Hwang, Min-Soo

2014-03-03

We report the experimental demonstration of an optically pumped rod-type photonic-crystal band-edge laser. The structure consists of a 20 × 20 square lattice array of InGaAsP iron-nail-shaped rods. A single-mode lasing action is observed with a low threshold of ∼90 μW and a peak wavelength of 1451.5 nm at room temperature. Measurements of the polarization-resolved mode images and lasing wavelengths agree well with numerical simulations, which confirm that the observed lasing mode originates from the first Γ-point transverse-electric-like band-edge mode. We believe that this low-threshold band-edge laser will be useful for the practical implementation of nanolasers.

Low threshold linear cavity mode-locked fiber laser using microfiber-based carbon nanotube saturable absorber

NASA Astrophysics Data System (ADS)

Lau, K. Y.; Ng, E. K.; Abu Bakar, M. H.; Abas, A. F.; Alresheedi, M. T.; Yusoff, Z.; Mahdi, M. A.

2018-06-01

In this work, we demonstrate a linear cavity mode-locked erbium-doped fiber laser in C-band wavelength region. The passive mode-locking is achieved using a microfiber-based carbon nanotube saturable absorber. The carbon nanotube saturable absorber has low saturation fluence of 0.98 μJ/cm2. Together with the linear cavity architecture, the fiber laser starts to produce soliton pulses at low pump power of 22.6 mW. The proposed fiber laser generates fundamental soliton pulses with a center wavelength, pulse width, and repetition rate of 1557.1 nm, 820 fs, and 5.41 MHz, respectively. This mode-locked laser scheme presents a viable option in the development of low threshold ultrashort pulse system for deployment as a seed laser.

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

NASA Astrophysics Data System (ADS)

Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

2014-12-01

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

Semiconductor diode laser material and devices with emission in visible region of the spectrum

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.

1975-01-01

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Lowering threshold energy for femtosecond laser pulse photodisruption through turbid media using adaptive optics

NASA Astrophysics Data System (ADS)

Hansen, A.; Ripken, Tammo; Krueger, Ronald R.; Lubatschowski, Holger

2011-03-01

Focussed femtosecond laser pulses are applied in ophthalmic tissues to create an optical breakdown and therefore a tissue dissection through photodisruption. The threshold irradiance for the optical breakdown depends on the photon density in the focal volume which can be influenced by the pulse energy, the size of the irradiated area (focus), and the irradiation time. For an application in the posterior eye segment the aberrations of the anterior eye elements cause a distortion of the wavefront and therefore an increased focal volume which reduces the photon density and thus raises the required energy for surpassing the threshold irradiance. The influence of adaptive optics on lowering the pulse energy required for photodisruption by refining a distorted focus was investigated. A reduction of the threshold energy can be shown when using adaptive optics. The spatial confinement with adaptive optics furthermore raises the irradiance at constant pulse energy. The lowered threshold energy allows for tissue dissection with reduced peripheral damage. This offers the possibility for moving femtosecond laser surgery from corneal or lental applications in the anterior eye to vitreal or retinal applications in the posterior eye.

Extended performance gas Cherenkov detector for gamma-ray detection in high-energy density experiments.

PubMed

Herrmann, H W; Kim, Y H; Young, C S; Fatherley, V E; Lopez, F E; Oertel, J A; Malone, R M; Rubery, M S; Horsfield, C J; Stoeffl, W; Zylstra, A B; Shmayda, W T; Batha, S H

2014-11-01

A new Gas Cherenkov Detector (GCD) with low-energy threshold and high sensitivity, currently known as Super GCD (or GCD-3 at OMEGA), is being developed for use at the OMEGA Laser Facility and the National Ignition Facility (NIF). Super GCD is designed to be pressurized to ≤400 psi (absolute) and uses all metal seals to allow the use of fluorinated gases inside the target chamber. This will allow the gamma energy threshold to be run as low at 1.8 MeV with 400 psi (absolute) of C2F6, opening up a new portion of the gamma ray spectrum. Super GCD operating at 20 cm from TCC will be ∼400 × more efficient at detecting DT fusion gammas at 16.7 MeV than the Gamma Reaction History diagnostic at NIF (GRH-6m) when operated at their minimum thresholds.

Cold Multiphoton Matrix Assisted Laser Desorption/Ionization (MALDI)

NASA Astrophysics Data System (ADS)

Harris, Peter; Cooke, William; Tracy, Eugene

2008-05-01

We present evidence of a cold multiphoton MALDI process occurring at a Room Temperature Ionic Liquid (RTIL)/metal interface. Our RTIL, 1-Butyl-3-methylimidazolium hexafluorophosphate, remains a stable liquid at room temperatures, even at pressures lower than 10-9 torr. We focus the 2^nd harmonic of a pulsed (2ns pulse length) Nd:YAG laser onto a gold grid coated with RTIL to generate a cold (narrow velocity spread) ion source with temporal resolution comparable to current MALDI ion sources. Unlike conventional MALDI, we believe multiphoton MALDI does not rely on collisional ionization within the ejection plume, and thus produces large signals at laser intensities just above threshold. Removing the collisional ionization process allow us to eject material from smaller regions of a sample, enhancing the suitability of multiphoton MALDI as an ion imaging technique.

GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating

NASA Technical Reports Server (NTRS)

Wu, M. C.; Boenke, M. M.; Wang, S.; Clark, W. M., Jr.; Stevens, E. H.

1988-01-01

The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time. Stripes of Si(2+) with a period of 2300 A and a dose about 10 to the 14th/sq cm are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 C are obtained. The wavelength tuning rate with temperature is 0.8 A/C. The coupling coefficient is estimated to be 15/cm. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.

Single-mode interband cascade laser multiemitter structure for two-wavelength absorption spectroscopy

NASA Astrophysics Data System (ADS)

Scheuermann, Julian; Weih, Robert; Becker, Steffen; Fischer, Marc; Koeth, Johannes; Höfling, Sven

2018-01-01

An interband cascade laser multiemitter with single-mode distributed feedback (DFB) emission at two wavelengths is presented. Continuous-wave laser operation is measured from 0°C to 40°C with threshold currents of around 25 mA and output powers of around 9 mW at 20°C. The ridge waveguide DFB structures are monolithically integrated with a spacing of 70 μm and each is provided with an individual metal DFB grating to select specific single-mode wavelengths of interest for absorption spectroscopy. The emission windows at 3.92 and 4.01 μm are targeting hydrogen sulfide and sulfur dioxide, which are of importance for industrial applications since both gases are reagents of the Claus process in sulfur recovery units, recovering elemental sulfur from gaseous hydrogen sulfide.

Heterostructures for quantum-cascade lasers of the wavelength range of 7-8 μm

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Gladyshev, A. G.; Filimonov, A. V.; Nevedomskii, V. N.; Kurochkin, A. S.; Kolodeznyi, E. S.; Sokolovskii, G. S.; Bugrov, V. E.; Karachinsky, L. Ya.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu.

2017-07-01

It is shown that molecular-beam-epitaxy technology can be used to fabricate heterostructures for quantum-cascade lasers of the wavelength range of 7-8 μm with an active region comprising 50 cascades based on a heterojunction of In0.53Ga0.47As/Al0.48In0.52As solid solutions. The optical emission is obtained using a quantum-cascade design operating on the principle of two-phonon resonance scattering. The properties of heterostructures were studied by the methods of X-ray diffraction and transmission electron microscopy, which showed their high quality with respect to the identical compositions and thicknesses of all 50 cascades. Stripe-geometry lasers made of these heterostructures exhibited lasing with a threshold current density below 1.6 kA/cm2 at a temperature of 78 K.

Numerical simulation and experimental investigation of Ti-6Al-4V melted by CW fiber laser at different pressures

NASA Astrophysics Data System (ADS)

Tabassum, Aasma; Zhou, Jie; Han, Bing; Ni, Xiao-wu; Sardar, Maryam

2017-07-01

The interaction of continuous wave (CW) fiber laser with Ti-6Al-4V alloy is investigated numerically and experimentally at different laser fluence values and ambient pressures of N2 atmosphere to determine the melting time threshold of Ti-6Al-4V alloy. A 2D-axisymmetric numerical model considering heat transfer and laminar flow is established to describe the melting process. The simulation results indicate that material melts earlier at lower pressure (8.0 Pa) than at higher pressure (8.8×104 Pa) in several milliseconds with the same laser fluence. The experimental results demonstrate that the melting time threshold at high laser fluence (above 1.89×108 W/m2) is shorter for lower pressure (vacuum), which is consistent with the simulation. While the melting time threshold at low laser fluence (below 1.89×108 W/m2) is shorter for higher pressure. The possible aspects which can affect the melting process include the increased heat loss induced by the heat conduction between the metal surface and the ambient gas with the increased pressure, and the absorption variation of the coarse surface resulted from the chemical reaction.

Examination of nanosecond laser melting thresholds in refractory metals by shear wave acoustics

NASA Astrophysics Data System (ADS)

Abdullaev, A.; Muminov, B.; Rakhymzhanov, A.; Mynbayev, N.; Utegulov, Z. N.

2017-07-01

Nanosecond laser pulse-induced melting thresholds in refractory (Nb, Mo, Ta and W) metals are measured using detected laser-generated acoustic shear waves. Obtained melting threshold values were found to be scaled with corresponding melting point temperatures of investigated materials displaying dissimilar shearing behavior. The experiments were conducted with motorized control of the incident laser pulse energies with small and uniform energy increments to reach high measurement accuracy and real-time monitoring of the epicentral acoustic waveforms from the opposite side of irradiated sample plates. Measured results were found to be in good agreement with numerical finite element model solving coupled elastodynamic and thermal conduction governing equations on structured quadrilateral mesh. Solid-melt phase transition was handled by means of apparent heat capacity method. The onset of melting was attributed to vanished shear modulus and rapid radial molten pool propagation within laser-heated metal leading to preferential generation of transverse acoustic waves from sources surrounding the molten mass resulting in the delay of shear wave transit times. Developed laser-based technique aims for applications involving remote examination of rapid melting processes of materials present in harsh environment (e.g. spent nuclear fuels) with high spatio-temporal resolution.

Ellipticity dependence of the near-threshold harmonics of H2 in an elliptical strong laser field.

PubMed

Yang, Hua; Liu, Peng; Li, Ruxin; Xu, Zhizhan

2013-11-18

We study the ellipticity dependence of the near-threshold (NT) harmonics of pre-aligned H2 molecules using the time-dependent density functional theory. The anomalous maximum appearing at a non-zero ellipticity for the generated NT harmonics can be attributed to multiphoton effects of the orthogonally polarized component of the elliptical driving laser field. Our calculation also shows that the structure of the bound-state, such as molecular alignment and bond length, can be sensitively reflected on the ellipticity dependence of the near-threshold harmonics.

Nanosecond-pulsed Q-switched Nd:YAG laser at 1064 nm with a gold nanotriangle saturable absorber

NASA Astrophysics Data System (ADS)

Chen, Xiaohan; Li, Ping; Dun, Yangyang; Song, Teng; Ma, Baomin

2018-06-01

Gold nanotriangles (GNTs) were successfully employed as a saturable absorber (SA) to achieve passively Q-switched lasers for the first time. The performance of the Q-switched Nd:YAG laser at 1064 nm has been systematically investigated. The corresponding shortest pulsewidth, the threshold pump power and the maximum Q-switched average output power were 275.5 ns, 1.37 W, and 171 mW, respectively. To our knowledge, this is the shortest pulsewidth and the lowest threshold in a passively Q-switched laser at approximately 1.1 µm based on a gold nanoparticle SA (GNPs-SA). Our experimental results proved that the GNTs-SA can be used as a promising saturable absorber for nanosecond-pulsed lasers.

Ignition study of a petrol/CNG single cylinder engine

NASA Astrophysics Data System (ADS)

Khan, N.; Saleem, Z.; Mirza, A. A.

2005-11-01

Benefits of laser ignition over the electrical ignition system for Compressed Natural Gas (CNG) engines have fuelled automobile industry and led to an extensive research on basic characteristics to switch over to the emerging technologies. This study was undertaken to determine the electrical and physical characteristics of the electric spark ignition of single cylinder petrol/CNG engine to determine minimum ignition requirements and timeline of ignition events to use in subsequent laser ignition study. This communication briefly reviews the ongoing research activities and reports the results of this experimental study. The premixed petrol and CNG mixtures were tested for variation of current and voltage characteristics of the spark with speed of engine. The current magnitude of discharge circuit was found to vary linearly over a wide range of speed but the stroke to stroke fire time was found to vary nonlinearly. The DC voltage profiles were observed to fluctuate randomly during ignition process and staying constant in rest of the combustion cycle. Fire to fire peaks of current amplitudes fluctuated up to 10% of the peak values at constant speed but increased almost linearly with increase in speed. Technical barriers of laser ignition related to threshold minimum ignition energy, inter-pulse durations and firing sequence are discussed. Present findings provide a basic initiative and background information for designing suitable timeline algorithms for laser ignited leaner direct injected CNG engines.

A comparison of free autologous breast reconstruction with and without the use of laser-assisted indocyanine green angiography: a cost-effectiveness analysis.

PubMed

Chatterjee, Abhishek; Krishnan, Naveen M; Van Vliet, Michael M; Powell, Stephen G; Rosen, Joseph M; Ridgway, Emily B

2013-05-01

Laser-assisted indocyanine green angiography is a U.S. Food and Drug Administration-approved technology used to assess tissue viability and perfusion. Its use in plastic and reconstructive surgery to assess flap perfusion in autologous breast reconstruction is relatively new. There have been no previous studies evaluating the cost-effectiveness of this new technology compared with the current practice of clinical judgment in evaluating tissue perfusion and viability in free autologous breast reconstruction in patients who have undergone mastectomy. A comprehensive literature review was performed to identify the complication rate of the most common complications with and without laser-assisted indocyanine green angiography in free autologous breast reconstruction after mastectomy. These probabilities were combined with Medicare Current Procedural Terminology provider reimbursement codes (cost) and utility estimates for common complications from a survey of 10 plastic surgeons to fit into a decision model to evaluate the cost-effectiveness of laser-assisted indocyanine green angiography. The decision model revealed a baseline cost difference of $773.66 and a 0.22 difference in the quality-adjusted life-years, yielding an incremental cost-utility ratio of $3516.64 per quality-adjusted life year favoring laser-assisted indocyanine green angiography. Sensitivity analysis showed that using laser-assisted indocyanine green angiography was more cost-effective when the complication rate without using laser-assisted indocyanine green angiography (clinical judgment alone) was 4 percent or higher. The authors' study demonstrates that laser-assisted indocyanine green angiography is a cost-effective technology under the most stringent acceptable thresholds when used in immediate free autologous breast reconstruction.

Comparison of retina damage thresholds simulating the femtosecond-laser in situ keratomileusis (fs-LASIK) process with two laser systems in the CW- and fs-regime

NASA Astrophysics Data System (ADS)

Sander, M.; Minet, O.; Zabarylo, U.; Müller, M.; Tetz, M. R.

2012-04-01

The femtosecond-laser in situ keratomileusis procedure affords the opportunity to correct ametropia by cutting transparent corneal tissue with ultra-short laser pulses. Thereby the tissue cut is generated by a laser-induced optical breakdown in the cornea with ultra-short laser pulses in the near-infrared range. Compared to standard procedures such as photorefractive keratectomy and laser in-situ keratomileusis with the excimer laser, where the risk potential for the eye is low due to the complete absorption of ultraviolet irradiation from corneal tissue, only a certain amount of the pulse energy is deposited in the cornea during the fs-LASIK process. The remaining energy propagates through the eye and interacts with the retina and the strong absorbing tissue layers behind. The objective of the presented study was to determine and compare the retina damage thresholds during the fs-LASIK process simulated with two various laser systems in the CW- and fs-regime.

Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications

NASA Astrophysics Data System (ADS)

Xue, Bin; Liu, Zhe; Yang, Jie; Feng, Liangsen; Zhang, Ning; Wang, Junxi; Li, Jinmin

2018-03-01

An off-the-shelf green laser diode (LD) was measured to investigate its temperature dependent characteristics. Performance of the device was severely restricted by rising temperature in terms of increasing threshold current and decreasing modulation bandwidth. The observation reveals that dynamic characteristics of the LD is sensitive to temperature. Influence of light attenuation on the modulation bandwidth of the green LD was also studied. The impact of light attenuation on the modulation bandwidth of the LD in short and low turbid water channel was not obvious while slight difference in modulation bandwidth under same injection level was observed between water channel and free space even at short range.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

NASA Astrophysics Data System (ADS)

Baryshev, V. I.; Golikova, E. G.; Duraev, V. P.; Kuchinskiĭ, V. I.; Kizhaev, K. Yu; Kuksenkov, D. V.; Portnoĭ, E. L.; Smirnitskiĭ, V. B.

1988-11-01

A study was made of stimulated emission from mesa-stripe distributed-feedback lasers in the form of double heterostructures with separate electron and optical confinement. A diffraction grating with a period Λ = 0.46 μm, formed on the surface of the upper waveguide layer by holographic lithography, ensured distributed feedback in the second order. The threshold current for cw operation at room temperature was 35-70 mA, the shift of the emission wavelength with temperature was ~ 0.08 nm/K, and the feedback coefficient deduced from the width of a "Bragg gap" was 110-150 cm- 1.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-performance 1.3-μm InGaAsP/InP heterostructures formed by two-phase liquid epitaxy

NASA Astrophysics Data System (ADS)

Novotný, J.; Procházková, O.; Šrobár, F.; Zelinka, J.

1988-11-01

A description is given of a two-phase liquid epitaxy method used to grow InGaAsP/InP heterostructures intended for injection lasers emitting in the 1.3-μm range. A study was made of heterostructures of three types: double, with an additional quaternary layer (λ approx 1.1 μm) adjoining the active layer; with two quaternary layers between the active layer and the InP confining layers. The configuration with two flanking quaternary layers was found to be the best from the point of view of the threshold current density, optical output power, and reproducibility.

Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si

NASA Astrophysics Data System (ADS)

Palit, Sabarni; Kirch, Jeremy; Mawst, Luke; Kuech, Thomas; Jokerst, Nan Marie

2010-02-01

We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.

High-power terahertz quantum cascade lasers with ∼0.23 W in continuous wave mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xuemin; Shen, Changle; Jiang, Tao

2016-07-15

Terahertz quantum cascade lasers with a record output power up to ∼0.23 W in continuous wave mode were obtained. We show that the optimal 2.9-mm-long device operating at 3.11 THz has a low threshold current density of 270 A/cm{sup 2} at ∼15 K. The maximum operating temperature arrived at ∼65 K in continuous wave mode and the internal quantum efficiencies decreased from 0.53 to 0.19 for the devices with different cavity lengths. By using one convex lens with the effective focal length of 13 mm, the beam profile was collimated to be a quasi Gaussian distribution.

Intense ionizing radiation from laser-induced processes in ultra-dense deuterium D(-1)

NASA Astrophysics Data System (ADS)

Olofson, Frans; Holmlid, Leif

2014-09-01

Nuclear fusion in ultra-dense deuterium D(-1) has been reported from our laboratory in a few studies using pulsed lasers with energy < 0.2 J. The direct observation of massive particles with energy 1-20 MeV u-1 is conclusive proof for fusion processes, either as a cause or as a result. Continuing the step-wise approach necessary for untangling a complex problem, the high-energy photons from the laser-induced plasma are now studied. The focus is here on the photoelectrons formed. The photons penetrating a copper foil have energy > 80 keV. The total charge created is up to 2 μC or 1 × 1013 photoelectrons per laser shot at 0.13 J pulse energy, assuming isotropic photon emission. The variation of the photoelectron current with laser intensity is faster than linear for some systems, which indicates rapid approach to volume ignition. On a permanent magnet at approximately 1 T, a laser pulse-energy threshold exists for the laser-induced processes probably due to the floating of most clusters of D(-1) in the magnetic field. This Meissner effect was reported previously.

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, Kwang S.; Hwang, In Heon; Kim, Khong Hon; Stock, Larry V.

1988-01-01

A XeCl laser pumped iodine laser oscillator was developed which will be incorporated into the Master Oscillator Power Amplifier (MOPA) system. The developed XeCl laser produces output energy of about 60 mJ per pulse. The pulse duration was about 10 nsec. The kinetic model for the solar-pumped laser was refined and the algorithm for the calculation of a set of rate equations was improved to increase the accuracy and the efficiency of the calculation. The improved algorithm was applied to explain the existing experimental data taken from a flashlamp pumped iodine laser for three kinds of lasants, i-C3F7I, n-C4F9I, and t-C4F9I. Various solid laser materials were evaluated for solar-pumping. The materials studied were Nd:YAG, Nd:YLF, and Cr:Nd:GSGG crystals. The slope efficiency of 0.17 percent was measured for the Nd:YLF near the threshold pump intensity which was 211 solar constants (29W/sq cm). The threshold pump intensity of the Nd:YAG was measured to be 236 solar constants (32W/sq cm) and the near-threshold slope efficiency was 0.12 percent. True CW laser operation of Cr:Nd:GSGG was possible only at pump intensities less than or equal to 1,500 solar constants (203 W/sq cm). This fact was attributed to the high thermal focusing effect of the Cr:Nd:GSGG rod.

Cryogenic Tm:YAP microchip laser

NASA Astrophysics Data System (ADS)

Hubka, Zbyněk.; Å ulc, Jan; Jelínková, Helena; Nejezchleb, Karel; Å koda, Václav

2016-04-01

The spectral characteristics of laser active media, and thus those of the laser output, are temperature dependent. Specifically, in almost every crystal host, cooling to low temperatures leads to better heat removal, a higher efficiency and output power, and a reduced lasing threshold. Tm-ion doped lasers have an emission wavelength around 2 μm and are important in medicine for soft tissue cutting and hemostasis, as well as in LIDAR or atmosphere sensing technology. This paper presents the performance-temperature dependency of a 4 at. % doped Tm:YAP microchip. During the experiment the Tm:YAP crystal was placed inside an evacuated liquid nitrogen cryostat on a cooling finger. As its temperature was varied from 80 K to 340 K, changes were observed in the absorption spectrum, ranging from 750 nm to 2000 nm and in the fluorescence spectrum from 1600 nm to 2050 nm. Fluorescence lifetime was seen to rise and fall with decreasing temperature. The laser was pumped by a 792 nm laser diode and at 80 K the maximum output peak power of the laser was 4.6 W with 23 % slope efficiency and 0.6 W threshold, compared to 2.4 W output peak power, 13 % slope efficiency and 3.3 W threshold when at 340 K. The laser emission wavelength changed from 1883 nm to 1993 nm for 80 K and 300 K, respectively.

Dual-wavelength, mode-locked erbium-doped fiber laser employing a graphene/polymethyl-methacrylate saturable absorber.

PubMed

Lau, K Y; Abu Bakar, M H; Muhammad, F D; Latif, A A; Omar, M F; Yusoff, Z; Mahdi, M A

2018-05-14

Mode-locked fiber laser incorporating a saturable absorber is an attractive configuration due to its stability and simple structure. In this work, we demonstrate a dual-wavelength passively mode-locked erbium-doped fiber laser employing a graphene/polymethyl-methacrylate saturable absorber. A laser resonator is developed based on dual cavity architecture with unidirectional signal oscillation, which is connected by a fiber branch sharing a common gain medium and saturable absorber. Dual wavelength mode-locked fiber lasers are observed at approximately 1530 and 1560 nm with 22.6 mW pump power threshold. Soliton pulse circulates in the laser cavity with pulse duration of 900 and 940 fs at shorter and longer wavelengths, respectively. This work presents a viable option in developing a low threshold mode-locked laser source with closely spaced dual wavelength femtosecond pulses in the C-band wavelength region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myers, Tanya L.; Cannon, Bret D.; Brauer, Carolyn S.

Fabry-Perot quantum cascade lasers (QCLs) were characterized following irradiation by high energy (64 MeV) protons and Cobalt-60 gamma rays. Seven QCLs were exposed to radiation dosages that are typical for a space mission in which the total accumulated dosages from both radiation sources varied from 20 krad(Si) to 46.3 krad(Si). In conclusion, the QCLs did not show any measurable changes in threshold current or slope efficiency suggesting the suitability of QCLs for use in space-based missions.

Electrically Tunable Mid-Infrared Single-Mode High-Speed Semiconductor Laser

DTIC Science & Technology

2010-11-01

effective and the net tunnel rate may decrease in spite of progressing carrier density buildup in the accumulation well. Enforcing the bias current at...In te ns ity , a .u . E, eV Regular ICL Figure 4 The dependence of the electroluminescence (EL) quantum energy on the bias voltage for a...spectral maximum energy increases linearly with the bias voltage. Since the dependence is measured in the sub-threshold pumping region, the linear

Collective stimulated Brillouin backscatter

NASA Astrophysics Data System (ADS)

Lushnikov, Pavel; Rose, Harvey

2007-11-01

We develop the statistical theory of linear collective stimulated Brillouin backscatter (CBSBS) in spatially and temporally incoherent laser beam. Instability is collective because it does not depend on the dynamics of isolated hot spots (speckles) of laser intensity, but rather depends on averaged laser beam intensity, optic f/#, and laser coherence time, Tc. CBSBS has a much larger threshold than a classical coherent beam's in long-scale-length high temperature plasma. It is a novel regime in which Tc is too large for applicability of well-known statistical theories (RPA) but Tc must be small enough to suppress single speckle processes such as self-focusing. Even if laser Tc is too large for a priori applicability of our theory, collective forward SBS^1, perhaps enhanced by high Z dopant, and its resultant self-induced Tc reduction, may regain the CBSBS regime. We identified convective and absolute CBSBS regimes. The threshold of convective instability is inside the typical parameter region of NIF designs. Well above incoherent threshold, the coherent instability growth rate is recovered. ^1 P.M. Lushnikov and H.A. Rose, Plasma Physics and Controlled Fusion, 48, 1501 (2006).

Reconfigurable Solid-state Dye-doped Polymer Ring Resonator Lasers

NASA Astrophysics Data System (ADS)

Chandrahalim, Hengky; Fan, Xudong

2015-12-01

This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3‧-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G), and 3,3‧-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm2 per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm2 per pulse was also demonstrated through the Vernier effect. The renewability of the dye-doped polymer was examined by removing and redepositing the dye-doped polymer on the same resonator hosts for multiple cycles. We recorded consistent emissions from the devices for all trials, suggesting the feasibility of employing this technology for numerous photonic and biochemical sensing applications that entail for sustainable, reconfigurable, and low lasing threshold coherent light sources on a chip.

Reconfigurable Solid-state Dye-doped Polymer Ring Resonator Lasers

PubMed Central

Chandrahalim, Hengky; Fan, Xudong

2015-01-01

This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3′-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G), and 3,3′-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm2 per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm2 per pulse was also demonstrated through the Vernier effect. The renewability of the dye-doped polymer was examined by removing and redepositing the dye-doped polymer on the same resonator hosts for multiple cycles. We recorded consistent emissions from the devices for all trials, suggesting the feasibility of employing this technology for numerous photonic and biochemical sensing applications that entail for sustainable, reconfigurable, and low lasing threshold coherent light sources on a chip. PMID:26674508

Reconfigurable Solid-state Dye-doped Polymer Ring Resonator Lasers.

PubMed

Chandrahalim, Hengky; Fan, Xudong

2015-12-17

This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3'-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G), and 3,3'-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm(2) per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm(2) per pulse was also demonstrated through the Vernier effect. The renewability of the dye-doped polymer was examined by removing and redepositing the dye-doped polymer on the same resonator hosts for multiple cycles. We recorded consistent emissions from the devices for all trials, suggesting the feasibility of employing this technology for numerous photonic and biochemical sensing applications that entail for sustainable, reconfigurable, and low lasing threshold coherent light sources on a chip.

A low-threshold high-index-contrast grating (HCG)-based organic VCSEL

NASA Astrophysics Data System (ADS)

Shayesteh, Mohammad Reza; Darvish, Ghafar; Ahmadi, Vahid

2015-12-01

We propose a low-threshold high-index-contrast grating (HCG)-based organic vertical-cavity surface-emitting laser (OVCSEL). The device has the feasibility to apply both electrical and optical excitation. The microcavity of the laser is a hybrid photonic crystal (HPC) in which the top distributed Bragg reflector (DBR) is replaced by a sub-wavelength high-contrast-grating layer, and provides a high-quality factor. The simulated quality factor of the microcavity is shown to be as high as 282,000. We also investigate the threshold behavior and the dynamics of the OVCSEL optically pumped with sub-picosecond pulses. Results from numerical simulation show that lasing threshold is 75 nJ/cm2.

Experimental research on femto-second laser damaging array CCD cameras

NASA Astrophysics Data System (ADS)

Shao, Junfeng; Guo, Jin; Wang, Ting-feng; Wang, Ming

2013-05-01

Charged Coupled Devices (CCD) are widely used in military and security applications, such as airborne and ship based surveillance, satellite reconnaissance and so on. Homeland security requires effective means to negate these advanced overseeing systems. Researches show that CCD based EO systems can be significantly dazzled or even damaged by high-repetition rate pulsed lasers. Here, we report femto - second laser interaction with CCD camera, which is probable of great importance in future. Femto - second laser is quite fresh new lasers, which has unique characteristics, such as extremely short pulse width (1 fs = 10-15 s), extremely high peak power (1 TW = 1012W), and especially its unique features when interacting with matters. Researches in femto second laser interaction with materials (metals, dielectrics) clearly indicate non-thermal effect dominates the process, which is of vast difference from that of long pulses interaction with matters. Firstly, the damage threshold test are performed with femto second laser acting on the CCD camera. An 800nm, 500μJ, 100fs laser pulse is used to irradiate interline CCD solid-state image sensor in the experiment. In order to focus laser energy onto tiny CCD active cells, an optical system of F/5.6 is used. A Sony production CCDs are chose as typical targets. The damage threshold is evaluated with multiple test data. Point damage, line damage and full array damage were observed when the irradiated pulse energy continuously increase during the experiment. The point damage threshold is found 151.2 mJ/cm2.The line damage threshold is found 508.2 mJ/cm2.The full-array damage threshold is found to be 5.91 J/cm2. Although the phenomenon is almost the same as that of nano laser interaction with CCD, these damage thresholds are substantially lower than that of data obtained from nano second laser interaction with CCD. Then at the same time, the electric features after different degrees of damage are tested with electronic multi meter. The resistance values between clock signal lines are measured. Contrasting the resistance values of the CCD before and after damage, it is found that the resistances decrease significantly between the vertical transfer clock signal lines values. The same results are found between the vertical transfer clock signal line and the earth electrode (ground).At last, the damage position and the damage mechanism were analyzed with above results and SEM morphological experiments. The point damage results in the laser destroying material, which shows no macro electro influence. The line damage is quite different from that of point damage, which shows deeper material corroding effect. More importantly, short circuits are found between vertical clock lines. The full array damage is even more severe than that of line damage starring with SEM, while no obvious different electrical features than that of line damage are found. Further researches are anticipated in femto second laser caused CCD damage mechanism with more advanced tools. This research is valuable in EO countermeasure and/or laser shielding applications.

Linear laser diode arrays for improvement in optical disk recording

NASA Technical Reports Server (NTRS)

Alphonse, G. A.; Carlin, D. B.; Connolly, J. C.

1990-01-01

The development of individually addressable laser diode arrays for multitrack magneto-optic recorders for space stations is discussed. Three multi-element channeled substrate planar (CSP) arrays with output power greater than 30 mW with linear light vs current characteristics and stable single mode spectra were delivered to NASA. These devices have been used to demonstrate for the first time the simultaneous recording of eight data tracks on a 14-inch magneto-optic erasable disk. The yield of these devices is low, mainly due to non-uniformities inherent to the LPE growth that was used to fabricate them. The authors have recently developed the inverted CSP, based on the much more uniform MOCVD growth techniques, and have made low threshold quantum well arrays requiring about three times less current than the CSP to deliver 30 mW CW in a single spatial mode. The inverted CSP is very promising for use in space flight recorder applications.

Electron rescattering in above-threshold photodetachment of negative ions.

PubMed

Gazibegović-Busuladzić, A; Milosević, D B; Becker, W; Bergues, B; Hultgren, H; Kiyan, I Yu

2010-03-12

We present experimental and theoretical results on photodetachment of Br(-) and F(-) in a strong infrared laser field. The observed photoelectron spectra of Br(-) exhibit a high-energy plateau along the laser polarization direction, which is identified as being due to the rescattering effect. The shape and the extension of the plateau is found to be influenced by the depletion of negative ions during the interaction with the laser pulse. Our findings represent the first observation of electron rescattering in above-threshold photodetachment of an atomic system with a short-range potential.

Data Fitting to Study Ablated Hard Dental Tissues by Nanosecond Laser Irradiation

PubMed Central

Abdel-Daiem, A. M.; Ansari, M. Shahnawaze; Babkair, Saeed S.; Salah, Numan A.; Al-Mujtaba, A.

2016-01-01

Laser ablation of dental hard tissues is one of the most important laser applications in dentistry. Many works have reported the interaction of laser radiations with tooth material to optimize laser parameters such as wavelength, energy density, etc. This work has focused on determining the relationship between energy density and ablation thresholds using pulsed, 5 nanosecond, neodymium-doped yttrium aluminum garnet; Nd:Y3Al5O12 (Nd:YAG) laser at 1064 nanometer. For enamel and dentin tissues, the ablations have been performed using laser-induced breakdown spectroscopy (LIBS) technique. The ablation thresholds and relationship between energy densities and peak areas of calcium lines, which appeared in LIBS, were determined using data fitting. Furthermore, the morphological changes were studied using Scanning Electron Microscope (SEM). Moreover, the chemical stability of the tooth material after ablation has been studied using Energy-Dispersive X-Ray Spectroscopy (EDX). The differences between carbon atomic % of non-irradiated and irradiated samples were tested using statistical t-test. Results revealed that the best fitting between energy densities and peak areas of calcium lines were exponential and linear for enamel and dentin, respectively. In addition, the ablation threshold of Nd:YAG lasers in enamel was higher than that of dentin. The morphology of the surrounded ablated region of enamel showed thermal damages. For enamel, the EDX quantitative analysis showed that the atomic % of carbon increased significantly when laser energy density increased. PMID:27228169

The threshold effects of Nd and Ho: YAG laser-induced surface modification on demineralization of dentin surfaces.

PubMed

Kinney, J H; Haupt, D L; Balooch, M; White, J M; Bell, W L; Marshall, S J; Marshall, G W

1996-06-01

Laser irradiation alters the structure of dentin and produces surface layers that give the appearance of being more enamel-like. The laser-modified surface may be more resistant to demineralization; hence, many investigators are proposing continued development of the laser as a possible preventive treatment for caries. The purpose of this study was to explore the morphological changes that occur in dentin when treated at threshold illuminance with two clinically interesting laser wavelengths, and to evaluate the effectiveness of the laser-treated surface at resisting demineralization in an acid-gel solution. The Nd: YAG laser (wavelength 1060 nm) produced significant recrystallization and grain growth of the apatite, without the formation of second phases such as beta-tricalcium phosphate. This recrystallized surface layer showed resistance to demineralization; however, the layer did not provide protection of the underlying dentin from demineralization because of cracks and macroscopic voids that allowed for penetration of the demineralizing gel. The Ho: YAG laser-treated surface (wavelength 2100 nm) did not show significant evidence of recrystallization and grain growth, and only a trace amount of an acid-resistant layer was observed with demineralization. It is speculated that the Ho:YAG laser is coupling with absorbed water, and that the heat transfer from the water to the mineral phase is inefficient. For the purposes of creating a demineralization-resistant layer, threshold illuminance with both Nd: YAG and Ho: YAG was ineffective.

High Efficiency, Low Power-Consumption DFB Quantum Cascade Lasers Without Lateral Regrowth.

PubMed

Jia, Zhi-Wei; Wang, Li-Jun; Zhang, Jin-Chuan; Liu, Feng-Qi; Zhou, Yu-Hong; Wang, Dong-Bo; Jia, Xue-Feng; Zhuo, Ning; Liu, Jun-Qi; Zhai, Shen-Qiang; Wang, Zhan-Guo

2017-12-01

Very low power-consumption distributed feedback (DFB) quantum cascade lasers (QCLs) at the wavelength around 4.9 μm were fabricated by conventional process without lateral regrowth of InP:Fe or using sidewall grating. Benefitted from the optimized materials and low waveguide loss, very low threshold current density of 0.5 kA/cm 2 was obtained for a device with cavity length of 2 mm. Combined with the partial-high-reflection coating, the 1-mm-long DFB QCL achieved low power-consumption continuous wave (CW) operation up to 105 °C. The CW threshold power-consumptions were 0.72 and 0.78 W at 15 and 25 °C, respectively. The maximum CW output power was over 110 mW at 15 °C and still more than 35 mW at 105 °C. At 15 °C, wall-plug efficiency of 5.5% and slope efficiency of 1.8 W/A were deduced, which were very high for low power-consumption DFB QCLs.

Dynamical origin of near- and below-threshold harmonic generation of Cs in an intense mid-infrared laser field.

PubMed

Li, Peng-Cheng; Sheu, Yae-Lin; Laughlin, Cecil; Chu, Shih-I

2015-05-20

Near- and below-threshold harmonic generation provides a potential approach to generate vacuum-ultraviolet frequency comb. However, the dynamical origin of in these lower harmonics is less understood and largely unexplored. Here we perform an ab initio quantum study of the near- and below-threshold harmonic generation of caesium (Cs) atoms in an intense 3,600-nm mid-infrared laser field. Combining with a synchrosqueezing transform of the quantum time-frequency spectrum and an extended semiclassical analysis, the roles of multiphoton and multiple rescattering trajectories on the near- and below-threshold harmonic generation processes are clarified. We find that the multiphoton-dominated trajectories only involve the electrons scattered off the higher part of the combined atom-field potential followed by the absorption of many photons in near- and below-threshold regime. Furthermore, only the near-resonant below-threshold harmonic is exclusive to exhibit phase locked features. Our results shed light on the dynamic origin of the near- and below-threshold harmonic generation.

Ablation experiment and threshold calculation of titanium alloy irradiated by ultra-fast pulse laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Buxiang; Jiang, Gedong; Wang, Wenjun, E-mail: wenjunwang@mail.xjtu.edu.cn

The interaction between an ultra-fast pulse laser and a material's surface has become a research hotspot in recent years. Micromachining of titanium alloy with an ultra-fast pulse laser is a very important research direction, and it has very important theoretical significance and application value in investigating the ablation threshold of titanium alloy irradiated by ultra-fast pulse lasers. Irradiated by a picosecond pulse laser with wavelengths of 1064 nm and 532 nm, the surface morphology and feature sizes, including ablation crater width (i.e. diameter), ablation depth, ablation area, ablation volume, single pulse ablation rate, and so forth, of the titanium alloymore » were studied, and their ablation distributions were obtained. The experimental results show that titanium alloy irradiated by a picosecond pulse infrared laser with a 1064 nm wavelength has better ablation morphology than that of the green picosecond pulse laser with a 532 nm wavelength. The feature sizes are approximately linearly dependent on the laser pulse energy density at low energy density and the monotonic increase in laser pulse energy density. With the increase in energy density, the ablation feature sizes are increased. The rate of increase in the feature sizes slows down gradually once the energy density reaches a certain value, and gradually saturated trends occur at a relatively high energy density. Based on the linear relation between the laser pulse energy density and the crater area of the titanium alloy surface, and the Gaussian distribution of the laser intensity on the cross section, the ablation threshold of titanium alloy irradiated by an ultra-fast pulse laser was calculated to be about 0.109 J/cm{sup 2}.« less

Caracterisation electrique et vieillissement de resistances de silicium polycristallin modifiees par laser

NASA Astrophysics Data System (ADS)

Fantoni, Julie

2011-12-01

Several classes of integrated microelectronic circuits require highly precise and stable analog components that cannot be obtained directly through standard CMOS fabrication processes. Those components must thus be calibrated either by a modification of the fabrication process or by the application of a post-fabrication tuning procedure. Many successful post-fabrication tuning processes have been introduced in the field of resistor calibration, including resistor laser trimming which is the core subject of this thesis. In this thesis, trimmed components are standard CMOS 180nm technology polysilicon resistors, integrated in circuits specially designed to allow laser intervention on their surface. The laser used is a nanosecond pulsed laser for which the fluence is set below the melting threshold of polysilicon in order to prevent damage to the material structure. This novel low-power highly localized procedure reduces the risk of damaging sensitive surrounding circuits and requires no additional fabrication step, allowing smaller dies areas and reduced costs. Precise, reliable and reproducible devices have been tuned using this technique with a precision below 500 ppm. The main objective of this research is to study and analyze the effect of the laser parameters variation on the trimmed component properties and to optimize those parameters in regard of the desired precision and stability of the final product. Raman spectroscopic measurements are performed to observe and characterize structural modifications of the polysilicon material following laser irradiation as precise resistance measurements and standardized in-oven aging tests allow the complete characterization of the device in regard of precision and stability. It is shown that for a given precision, this novel low-power trimming technique produces devices with a stability comparable to those obtained with another trimming technology such as the pulsed current method. An electrical model is also developed to predict the resistance modification with the laser fluence, the number of pulses as well as the duration of those pulses. The model is shown to be 1 500 ppm accurate when laser fluence is set accordingly to the melting threshold of polysilicon. Concerning stability, results show that, following a 300 h, 150 °C aging procedure, laser trimmed components present a 1.2% resistance drift from their initial resistance value whereas a 0.7% drift is observed on untrimmed samples. Those results are comparable to those obtained with the pulsed current trimming technique which produces trimmed component with a 1% resistance drift following a 200 h 162 °C aging procedure. Recommendations are given in the conclusion as to which laser parameters to modify and how to modify them in order to produce the desired trimmed devices with the best performance possible.

Thermal Detection Thresholds of Aδ- and C-Fibre Afferents Activated by Brief CO2 Laser Pulses Applied onto the Human Hairy Skin

PubMed Central

Churyukanov, Maxim; Plaghki, Léon; Legrain, Valéry; Mouraux, André

2012-01-01

Brief high-power laser pulses applied onto the hairy skin of the distal end of a limb generate a double sensation related to the activation of Aδ- and C-fibres, referred to as first and second pain. However, neurophysiological and behavioural responses related to the activation of C-fibres can be studied reliably only if the concomitant activation of Aδ-fibres is avoided. Here, using a novel CO2 laser stimulator able to deliver constant-temperature heat pulses through a feedback regulation of laser power by an online measurement of skin temperature at target site, combined with an adaptive staircase algorithm using reaction-time to distinguish between responses triggered by Aδ- and C-fibre input, we show that it is possible to estimate robustly and independently the thermal detection thresholds of Aδ-fibres (46.9±1.7°C) and C-fibres (39.8±1.7°C). Furthermore, we show that both thresholds are dependent on the skin temperature preceding and/or surrounding the test stimulus, indicating that the Aδ- and C-fibre afferents triggering the behavioural responses to brief laser pulses behave, at least partially, as detectors of a change in skin temperature rather than as pure level detectors. Most importantly, our results show that the difference in threshold between Aδ- and C-fibre afferents activated by brief laser pulses can be exploited to activate C-fibres selectively and reliably, provided that the rise in skin temperature generated by the laser stimulator is well-controlled. Our approach could constitute a tool to explore, in humans, the physiological and pathophysiological mechanisms involved in processing C- and Aδ-fibre input, respectively. PMID:22558230

Dispersion, spatial growth rate, and start current of a Cherenkov free-electron laser with negative-index material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuanyuan; Wei, Yanyu; Jiang, Xuebing

We present an analysis of a Cherenkov free-electron laser based on a single slab made from negative-index materials. In this system, a flat electron beam with finite thickness travelling close to the surface of the slab interacts with the copropagating electromagnetic surface mode. The dispersion equation for a finitely thick slab is worked out and solved numerically to study the dispersion relation of surface modes supported by negative-index materials, and the calculations are in good agreement with the simulation results from a finite difference time domain code. We find that under suitable conditions there is inherent feedback in such amore » scheme due to the characteristics of negative-index materials, which means that the system can oscillate without external reflectors when the beam current exceeds a threshold value, i.e., start current. Using the hydrodynamic approach, we setup coupled equations for this system, and solve these equations analytically in the small signal regime to obtain formulas for the spatial growth rate and start current.« less

Terahertz radiation driven by two-color laser pulses at near-relativistic intensities: Competition between photoionization and wakefield effects.

PubMed

González de Alaiza Martínez, P; Davoine, X; Debayle, A; Gremillet, L; Bergé, L

2016-06-03

We numerically investigate terahertz (THz) pulse generation by linearly-polarized, two-color femtosecond laser pulses in highly-ionized argon. Major processes consist of tunneling photoionization and ponderomotive forces associated with transverse and longitudinal field excitations. By means of two-dimensional particle-in-cell (PIC) simulations, we reveal the importance of photocurrent mechanisms besides transverse and longitudinal plasma waves for laser intensities >10(15) W/cm(2). We demonstrate the following. (i) With two-color pulses, photoionization prevails in the generation of GV/m THz fields up to 10(17) W/cm(2) laser intensities and suddenly loses efficiency near the relativistic threshold, as the outermost electron shell of ionized Ar atoms has been fully depleted. (ii) PIC results can be explained by a one-dimensional Maxwell-fluid model and its semi-analytical solutions, offering the first unified description of the main THz sources created in plasmas. (iii) The THz power emitted outside the plasma channel mostly originates from the transverse currents.

The potential of ill-nitride laser diodes for solid-state lighting [Advantages of III-Nitride Laser Diodes in Solid-State Lighting

DOE PAGES

Wierer, Jonathan; Tsao, Jeffrey Y.

2014-09-01

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for bothmore » LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.« less

Terahertz radiation driven by two-color laser pulses at near-relativistic intensities: Competition between photoionization and wakefield effects

PubMed Central

González de Alaiza Martínez, P.; Davoine, X.; Debayle, A.; Gremillet, L.; Bergé, L.

2016-01-01

We numerically investigate terahertz (THz) pulse generation by linearly-polarized, two-color femtosecond laser pulses in highly-ionized argon. Major processes consist of tunneling photoionization and ponderomotive forces associated with transverse and longitudinal field excitations. By means of two-dimensional particle-in-cell (PIC) simulations, we reveal the importance of photocurrent mechanisms besides transverse and longitudinal plasma waves for laser intensities >1015 W/cm2. We demonstrate the following. (i) With two-color pulses, photoionization prevails in the generation of GV/m THz fields up to 1017 W/cm2 laser intensities and suddenly loses efficiency near the relativistic threshold, as the outermost electron shell of ionized Ar atoms has been fully depleted. (ii) PIC results can be explained by a one-dimensional Maxwell-fluid model and its semi-analytical solutions, offering the first unified description of the main THz sources created in plasmas. (iii) The THz power emitted outside the plasma channel mostly originates from the transverse currents. PMID:27255689

Study of LPE methods for growth of InGaAsP/InP CW lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Hawrylo, F. Z.; Smith, R. T.; Levin, E. R.

1980-01-01

Two methods for liquid phase growth of InGaAsP/InP lasers were studied. Single phase growth, based on saturated melts and 5 C supercooling, was compared to two phase growth excess InP and 20 C nominal supercooling. Substrates cut on the (100) plane were used, and morphology in both cases was excellent and comparable to that obtainable in AlGaAs materials. A high degree of reproducibility was obtained in the materials grown by the two phased method, which is therefore presently preferred for the preparation of laser material. A refractive index step of 0.28 and an index n = 3.46 were obtained for In.81Ga.19As,5P5 lasing at 1.3 microns. Oxide-stripe lasers with typical room temperature cw threshold currents of 180 mA were obtained and some of them showed single mode behavior without lateral cavity modifications. COntinuous operation of 800 h at room temperature was obtained without noticeable degradation.

Amplified spontaneous emission in solar-pumped iodine laser

NASA Technical Reports Server (NTRS)

Cho, Yong S.; Hwang, In H.; Han, Kwang S.; Lee, Ja H.

1992-01-01

The amplified spontaneous emission (ASE) from a long pulse, solar-simulating radiation pumped iodine laser amplifier is studied. The ASE threshold pump intensity is almost proportional to the inverse of the laser gain length when the gas pressure is constant in the laser tube.

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE PAGES

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; ...

2017-03-24

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Mesoscopic modeling of the response of human dental enamel to mid-infrared radiation

NASA Astrophysics Data System (ADS)

Vila Verde, Ana; Ramos, Marta; Stoneham, A. M.

2006-03-01

Ablation of human dental enamel, a composite biomaterial with water pores, is of significant importance in minimally invasive laser dentistry but progress in the area is hampered by the lack of optimal laser parameters. We use mesoscopic finite element models of this material to study its response to mid-infrared radiation. Our results indicate that the cost-effective, off-the-shelf CO2 laser at λ = 10.6 μm may in fact ablate enamel precisely, reproducibly and with limited unwanted side effects such as cracking or heating, provided that a pulse duration of 10 μs is used. Furthermore, our results also indicate that the Er:YAG laser (λ = 2.94 μm), currently popular for laser dentistry, may in fact cause unwanted deep cracking in the enamel when regions with unusually high water content are irradiated, and also provide an explanation for the large range of ablation threshold values observed for this material. The model may be easily adapted to study the response of any composite material to infrared radiation and thus may be useful for the scientific community.

Room-temperature-operation visible-emission semiconductor diode lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.; Nuese, C. J.

1977-01-01

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} atmore » 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.« less

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voronenkov, V. V.; Virko, M. V.; Kogotkov, V. S.

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A verticalmore » Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.« less

Lasing in strongly scattering dielectric microstructures

NASA Astrophysics Data System (ADS)

Florescu, Lucia

In the first part of this thesis, a detailed analysis of lasing in random multiple-light-scattering media with gain is presented. Random laser emission is analyzed using a time-dependent diffusion model for light propagating in the medium containing active atoms. We demonstrate the effects of scatterers to narrow the emission spectral linewidth and to shorten the emitted pulse duration at a specific threshold pump intensity. This threshold pump intensity decreases with scatterer density and excitation spot diameter, in excellent agreement with experimental results. The coherence properties of the random laser are studied using a generalized master equation. The random laser medium is treated as a collection of low quality-factor cavities, coupled by random photon diffusion. Laser-like coherence, on average, is demonstrated above a specific pumping threshold. We demonstrate that with stronger scattering, the pumping threshold for the transition from chaotic to isotropic coherent light emission decreases and enhanced optical coherence for the emitted light is achieved above threshold. The second part of this thesis presents a study of lasing in photonic crystals (PCs). The emission from an incoherently pumped atomic system in interaction with the electro-magnetic reservoir of a PC is analyzed using a set of generalized semiclassical Maxwell-Bloch equations. We demonstrate that the photonic band edge facilitates the enhancement of stimulated emission and the reduction of internal losses, leading to an important lowering of the laser threshold. In addition, an increase of the laser output at a photonic band edge is demonstrated. We next develop a detailed quantum theory of a coherently pumped two-level atom in a photonic band gap material, coupled to both a multi-mode wave-guide channel and a high-quality micro-cavity embedded within the PC. The cavity field characteristics are highly distinct from that of a corresponding high-Q cavity in ordinary vacuum. We demonstrate enhanced, inversionless, and nearly coherent light generation when the photon density of states (DOS) jump between the Mollow spectral components of atomic resonance fluorescence is large. In the case of a vanishing photon DOS on the lower Mollow sideband and no dipolar dephasing, the emitted photon statistics is Poissonian and the cavity field exhibits quadrature coherence.

End-pumped continuous-wave intracavity yellow Raman laser at 590 nm with SrWO4 Raman crystal

NASA Astrophysics Data System (ADS)

Yang, F. G.; You, Z. Y.; Zhu, Z. J.; Wang, Y.; Li, J. F.; Tu, C. Y.

2010-01-01

We present an end-pumped continuous-wave intra-cavity yellow Raman laser at 590 nm with a 60 mm long pure crystal SrWO4 and an intra-cavity LiB3O5 frequency doubling crystal. The highest output power of yellow laser at 590 nm was 230 mW and the output power and threshold were found to be correlative with the polarized directions of pure single crystal SrWO4 deeply. Along different directions, the minimum and maximum thresholds of yellow Raman laser at 590 nm were measured to be 2.8 W and 14.3 W with respect to 808 nm LD pump power, respectively.

A Solid State Ultraviolet Lasers Based on Cerium-Doped LiCaAIF(sub 6) Crystal Resonator

NASA Technical Reports Server (NTRS)

Yu, Nan; Le, Thanh; Schowalter, Steven J.; Rellergert, Wade; Jeet, Justin; Lin, Guoping; Hudson, Eric

2012-01-01

We report the first demonstration of a UV laser using a high-Q whispering gallery mode (WGM) resonator of Ce+: LiCaAlF6. We show that WGM resonators from LiCaAlF6 can achieve a Q of 2.6 x 10(sup 7) at UV. We demonstrated a UV laser at 290 nm with a pulsed pump laser at 266 nm. The experiments showed the low pump threshold intensity of 7.5 x 10(sup 9) W/m(sup 2) and slope efficiency of 25%. We have also observed lasing delay dynamics. These results are consistent with our modeling and theoretical estimates, and pave the way for a low threshold cw UV laser using WGM resonator cavity.

Laser-induced desorption of atomic and molecular fragments from a tin dioxide surface modified by a thin organic covering of copper phthalocyanine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Komolov, A. S., E-mail: akomolov07@ya.ru; Komolov, S. A.; Lazneva, E. F.

2012-01-15

The systematic features of laser-induced desorption from an SnO{sub 2} surface exposed to 10-ns pulsed neodymium laser radiation are studied at the photon energy 2.34 eV, in the range of pulse energy densities 1 to 50 mJ/cm{sup 2}. As the threshold pulse energy 28 mJ/cm{sup 2} is achieved, molecular oxygen O{sub 2} is detected in the desorption mass spectra from the SnO{sub 2} surface; as the threshold pulse energy 42 mJ/cm{sup 2} is reached, tin Sn, and SnO and (SnO){sub 2} particle desorption is observed. The laser desorption mass spectra from the SnO{sub 2} surface coated with an organic coppermore » phthalocyanine (CuPc) film 50 nm thick are measured. It is shown that laser irradiation causes the fragmentation of CuPc molecules and the desorption of molecular fragments in the laser pulse energy density range 6 to 10 mJ/cm{sup 2}. Along with the desorption of molecular fragments, a weak desorption signal of the substrate components O{sub 2}, Sn, SnO, and (SnO){sub 2} is observed in the same energy range. Desorption energy thresholds of substrate atomic components from the organic film surface are approximately five times lower than thresholds of their desorption from the atomically clean SnO{sub 2} surface, which indicates the diffusion of atomic components of the SnO{sub 2} substrate to the bulk of the deposited organic film.« less

[Flexible Guidance of Ultra-Short Laser Pulses in Ophthalmic Therapy Systems].

PubMed

Blum, J; Blum, M; Rill, M S; Haueisen, J

2017-01-01

In the last 20 years, the role of ultrashort pulsed lasers in ophthalmology has become increasingly important. However, it is still impossible to guide ultra-short laser pulses with standard glass fibres. The highly energetic femtosecond pulses would destroy the fibre material, and non-linear dispersion effects would significantly change beam parameters. In contrast, photonic crystal fibres mainly guide the laser pulses in air, so that absorption and dispersive pulse broadening have essentially no effect. This article compares classical beam guidance with mirrors, lenses and prisms with photonic crystal fibres and describes the underlying concepts and the current state of technology. A classical mirror arm possesses more variable optical properties, while the HCF (Hollow-Core Photonic Crystal Fibre) must be matched in terms of the laser energy and the laser spectrum. In contrast, the HCF has more advantages in respect of handling, system integration and costs. For applications based on photodisruptive laser-tissue interaction, the relatively low damage threshold of photonic crystal fibres compared to classic beam guiding systems is unacceptable. If, however, pulsed laser radiation has a sufficiently low peak intensity, e.g. as used for plasma-induced ablation, photonic crystal fibres can definitely be considered as an alternative solution to classic beam guidance. Georg Thieme Verlag KG Stuttgart · New York.

Application of laser spot cutting on spring contact probe for semiconductor package inspection

NASA Astrophysics Data System (ADS)

Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

2017-12-01

A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

Exploring the Mechanisms of Exercise-Induced Hypoalgesia Using Somatosensory and Laser Evoked Potentials

PubMed Central

Jones, Matthew D.; Taylor, Janet L.; Booth, John; Barry, Benjamin K.

2016-01-01

Exercise-induced hypoalgesia is well described, but the underlying mechanisms are unclear. The aim of this study was to examine the effect of exercise on somatosensory evoked potentials, laser evoked potentials, pressure pain thresholds and heat pain thresholds. These were recorded before and after 3-min of isometric elbow flexion exercise at 40% of the participant's maximal voluntary force, or an equivalent period of rest. Exercise-induced hypoalgesia was confirmed in two experiments (Experiment 1–SEPs; Experiment 2–LEPs) by increased pressure pain thresholds at biceps brachii (24.3 and 20.6% increase in Experiment 1 and 2, respectively; both d > 0.84 and p < 0.001) and first dorsal interosseous (18.8 and 21.5% increase in Experiment 1 and 2, respectively; both d > 0.57 and p < 0.001). In contrast, heat pain thresholds were not significantly different after exercise (forearm: 10.8% increase, d = 0.35, p = 0.10; hand: 3.6% increase, d = 0.06, p = 0.74). Contrasting effects of exercise on the amplitude of laser evoked potentials (14.6% decrease, d = −0.42, p = 0.004) and somatosensory evoked potentials (10.9% increase, d = −0.02, p = 1) were also observed, while an equivalent period of rest showed similar habituation (laser evoked potential: 7.3% decrease, d = −0.25, p = 0.14; somatosensory evoked potential: 20.7% decrease, d = −0.32, p = 0.006). The differential response of pressure pain thresholds and heat pain thresholds to exercise is consistent with relative insensitivity of thermal nociception to the acute hypoalgesic effects of exercise. Conflicting effects of exercise on somatosensory evoked potentials and laser evoked potentials were observed. This may reflect non-nociceptive contributions to the somatosensory evoked potential, but could also indicate that peripheral nociceptors contribute to exercise-induced hypoalgesia. PMID:27965587

Calculation of femtosecond pulse laser induced damage threshold for broadband antireflective microstructure arrays.

PubMed

Jing, Xufeng; Shao, Jianda; Zhang, Junchao; Jin, Yunxia; He, Hongbo; Fan, Zhengxiu

2009-12-21

In order to more exactly predict femtosecond pulse laser induced damage threshold, an accurate theoretical model taking into account photoionization, avalanche ionization and decay of electrons is proposed by comparing respectively several combined ionization models with the published experimental measurements. In addition, the transmittance property and the near-field distribution of the 'moth eye' broadband antireflective microstructure directly patterned into the substrate material as a function of the surface structure period and groove depth are performed by a rigorous Fourier model method. It is found that the near-field distribution is strongly dependent on the periodicity of surface structure for TE polarization, but for TM wave it is insensitive to the period. What's more, the femtosecond pulse laser damage threshold of the surface microstructure on the pulse duration taking into account the local maximum electric field enhancement was calculated using the proposed relatively accurate theoretical ionization model. For the longer incident wavelength of 1064 nm, the weak linear damage threshold on the pulse duration is shown, but there is a surprising oscillation peak of breakdown threshold as a function of the pulse duration for the shorter incident wavelength of 532 nm.

Irradiance enhancement and increased laser damage threshold in As₂S₃ moth-eye antireflective structures.

PubMed

Weiblen, R Joseph; Florea, Catalin M; Busse, Lynda E; Shaw, L Brandon; Menyuk, Curtis R; Aggarwal, Ishwar D; Sanghera, Jasbinder S

2015-10-15

It has been experimentally observed that moth-eye antireflective microstructures at the end of As2S3 fibers have an increased laser damage threshold relative to thin-film antireflective coatings. In this work, we computationally study the irradiance enhancement in As2S3 moth-eye antireflective microstructures in order to explain the increased damage threshold. We show that the irradiance enhancement occurs mostly on the air side of the interfaces and is minimal in the As2S3 material. We give a physical explanation for this behavior.

High duty cycle far-infrared germanium lasers

NASA Astrophysics Data System (ADS)

Chamberlin, Danielle Russell

The effects of crystal geometry, heat transport, and optics on high duty cycle germanium hole population inversion lasers are investigated. Currently the laser's low duty cycle limits its utility for many applications. This low duty cycle is a result of the combination of the large electrical input power necessary and insufficient heat extraction. In order to achieve a continuous-wave device, the input power must be decreased and the cooling power increased. In order to improve laser efficiency and lower the input power, the effect of laser crystal geometry on the electric field uniformity is considered. Geometries with d/L>>1 or <<1 are shown to have improved electric field uniformity, where d is the distance between electrical contacts and L is the length in the direction of the Hall electric field. A geometry with d/L>>1 is shown to decrease the threshold voltage for lasing. Laser crystals with the traditional contact geometry have been compared to a new, planar contact design with both electrical contacts on the same side of the laser crystal. This new geometry provides a large d/L ratio while also allowing effective heat sinking. A pure, single-crystal silicon heat sink is developed for planar contact design lasers, which improves the duty cycle tenfold. For the traditional contact design, copper heat sinks are developed that demonstrate cooling powers up to 10 Watts. The effects of thermal conductivity, surface area, and interfacial thermal resistance on the heat transport are compared. To improve the cavity quality, thereby allowing for smaller crystal volumes, new optical designs are investigated. A vertical cavity structure is demonstrated for the planar contact structure using strontium titanate single crystals as mirrors. A mode-selecting cavity is implemented for the traditional contact design. The spectra of small-volume, near-threshold lasers are measured. In contrast to the emission of larger lasers, these lasers emit within narrow frequency peaks that do not shift smoothly with magnetic field. The details of the emission are shown to strongly depend on the optical cavity. A record duty cycle of 5% is achieved using a laser of dimensions 0.80 x 3 x 11 mm3 with the traditional contact geometry, improved copper heat sinks, and carefully etched crystal surfaces.

Influence of a pulsed CO2 laser operating at 9.4 μm on the surface morphology, reflectivity, and acid resistance of dental enamel below the threshold for melting

NASA Astrophysics Data System (ADS)

Kim, Jin Wan; Lee, Raymond; Chan, Kenneth H.; Jew, Jamison M.; Fried, Daniel

2017-02-01

Below the threshold for laser ablation, the mineral phase of enamel is converted into a purer phase hydroxyapatite with increased acid resistance. Studies suggest the possibility of achieving the conversion without visible surface alteration. In this study, changes in the surface morphology, reflectivity, and acid resistance were monitored with varying irradiation intensity. Bovine enamel specimens were irradiated using a CO2 laser operating at 9.4 μm with a Gaussian spatial beam profile-1.6 to 3.1 mm in diameter. After laser treatment, samples were subjected to demineralization to simulate the acidic intraoral conditions of dental decay. The resulting demineralization and erosion were assessed using polarization-sensitive optical coherence tomography, three-dimensional digital microscopy, and polarized light microscopy. Distinct changes in the surface morphology and the degree of inhibition were found within the laser-treated area in accordance with the laser intensity profile. Subtle visual changes were noted below the melting point for enamel that appear to correspond to thresholds for denaturation of the organic phase and thermal decomposition of the mineral phase. There was significant protection from laser irradiation in areas in which the reflectivity was not increased significantly, suggesting that aesthetically sensitive areas of the tooth can be treated for caries prevention.

CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode

NASA Technical Reports Server (NTRS)

Martin, R. D.; Forouhar, S.; Keo, S.; Lang, R. J.; Hunsperger, R. G.; Tiberio, R. C.; Chapman, P. F.

1995-01-01

Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etehed along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8/cm was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.

Electrically Injected UV-Visible Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, George T.; Li, Changyi; Li, Qiming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasersmore » emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.« less

Interband cascade lasers with >40% continuous-wave wallplug efficiency at cryogenic temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Canedy, C. L.; Kim, C. S.; Merritt, C. D.

2015-09-21

Broad-area 10-stage interband cascade lasers (ICLs) emitting at λ = 3.0–3.2 μm are shown to maintain continuous-wave (cw) wallplug efficiencies exceeding 40% at temperatures up to 125 K, despite having a design optimized for operation at ambient and above. The cw threshold current density at 80 K is only 11 A/cm{sup 2} for a 2 mm cavity with anti-reflection/high-reflection coatings on the two facets. The external differential quantum efficiency for a 1-mm-long cavity with the same coatings is 70% per stage at 80 K, and still above 65% at 150 K. The results demonstrate that at cryogenic temperatures, where free carrier absorption losses are minimized, ICLs can convert electricalmore » to optical energy nearly as efficiently as the best specially designed intersubband-based quantum cascade lasers.« less

Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3  μm.

PubMed

Kryzhanovskaya, Natalia; Moiseev, Eduard; Polubavkina, Yulia; Maximov, Mikhail; Kulagina, Marina; Troshkov, Sergey; Zadiranov, Yury; Guseva, Yulia; Lipovskii, Andrey; Tang, Mingchu; Liao, Mengya; Wu, Jiang; Chen, Siming; Liu, Huiyun; Zhukov, Alexey

2017-09-01

High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600  A/cm 2 (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality MD lasers on GaAs substrates. Microlasers on silicon emit in the wavelength range of 1320-1350 nm via the ground state transition of InAs/InGaAs/GaAs quantum dots. The high stability of the lasing wavelength (dλ/dI=0.1  nm/mA) and the low specific thermal resistance of 4×10 -3 °C×cm 2 /W are demonstrated.

High-power AlGaInN lasers for Blu-ray disc system

NASA Astrophysics Data System (ADS)

Takeya, Motonubu; Ikeda, Shinroh; Sasaki, Tomomi; Fujimoto, Tsuyoshi; Ohfuji, Yoshio; Mizuno, Takashi; Oikawa, Kenji; Yabuki, Yoshifumi; Uchida, Shiro; Ikeda, Masao

2003-07-01

This paper describes an improved laser structure for AlGaInN based blue-violet lasers (BV-LDs). The design realizes a small beam divergence angle perpendicular to the junction plane and high characteristic temperature wihtout significant increase in threshold current density (Jth) by optimizing the position of the Mg-doped layer and introducing an undoped AlGaN layer between the active layer and the Mg-doped electron-blocking layer. The mean time to failure (MTTF) of devices based on this design was found to be closely related to the dislocation density of ELO-GaN basal layer. Under 50 mW CW operation at 70°C, a MTTF of over 5000 h was realized whenthe dark spot density (indicative of dislocation density) is less than ~5×106 cm-2. Power consumption under 50mW CW operation at 70°C was approximately 0.33 W, independent of the dislocation density.

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.