High-efficiency VCSEL arrays for illumination and sensing in consumer applications

NASA Astrophysics Data System (ADS)

Seurin, Jean-Francois; Zhou, Delai; Xu, Guoyang; Miglo, Alexander; Li, Daizong; Chen, Tong; Guo, Baiming; Ghosh, Chuni

2016-03-01

There has been increased interest in vertical-cavity surface-emitting lasers (VCSELs) for illumination and sensing in the consumer market, especially for 3D sensing ("gesture recognition") and 3D image capture. For these applications, the typical wavelength range of interest is 830~950nm and power levels vary from a few milli-Watts to several Watts. The devices are operated in short pulse mode (a few nano-seconds) with fast rise and fall times for time-of-flight applications (ToF), or in CW/quasi-CW for structured light applications. In VCSELs, the narrow spectrum and its low temperature dependence allows the use of narrower filters and therefore better signal-to-noise performance, especially for outdoor applications. In portable devices (mobile devices, wearable devices, laptops etc.) the size of the illumination module (VCSEL and optics) is a primary consideration. VCSELs offer a unique benefit compared to other laser sources in that they are "surface-mountable" and can be easily integrated along with other electronics components on a printed circuit board (PCB). A critical concern is the power-conversion efficiency (PCE) of the illumination source operating at high temperatures (>50 deg C). We report on various VCSEL based devices and diffuser-integrated modules with high efficiency at high temperatures. Over 40% PCE was achieved in broad temperature range of 0-70 °C for either low power single devices or high power VCSEL arrays, with sub- nano-second rise and fall time. These high power VCSEL arrays show excellent reliability, with extracted mean-time-to-failure (MTTF) of over 500 years at 60 °C ambient temperature and 8W peak output.

Vertical-cavity surface-emitting laser sources for gigahertz-bandwidth, multiwavelength frequency-domain photon migration

NASA Astrophysics Data System (ADS)

O'Sullivan, Thomas D.; No, Keunsik; Matlock, Alex; Warren, Robert V.; Hill, Brian; Cerussi, Albert E.; Tromberg, Bruce J.

2017-10-01

Frequency-domain photon migration (FDPM) uses modulated laser light to measure the bulk optical properties of turbid media and is increasingly applied for noninvasive functional medical imaging in the near-infrared. Although semiconductor edge-emitting laser diodes have been traditionally used as miniature light sources for this application, we show that vertical-cavity surface-emitting lasers (VCSELs) exhibit output power and modulation performance characteristics suitable for FDPM measurements of tissue optical properties at modulation frequencies exceeding 1 GHz. We also show that an array of multiple VCSEL devices can be coherently modulated at frequencies suitable for FDPM and can improve optical power. In addition, their small size and simple packaging make them an attractive choice as components in wearable sensors and clinical FDPM-based optical spectroscopy systems. We demonstrate the benefits of VCSEL technology by fabricating and testing a unique, compact VCSEL-based optical probe with an integrated avalanche photodiode. We demonstrate sensitivity of the VCSEL-based probe to subcutaneous tissue hemodynamics that was induced during an arterial cuff occlusion of the upper arm in a human subject.

32 x 16 CMOS smart pixel array for optical interconnects

NASA Astrophysics Data System (ADS)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

VCSEL End-Pumped Passively Q-Switched Nd:YAG Laser with Adjustable Pulse Energy

DTIC Science & Technology

2011-02-28

entire VCSEL array. Neglecting lens aberrations, the focused spot diameter is given by focal length of the lens times the full divergence angle of the...pump intensity distribution generated by a pump-light-focusing lens . ©2011 Optical Society of America OCIS codes: (140.3530) Lasers Neodymium...Passive Q-Switch and Brewster Plate in a Pulsed Nd: YAG Laser,” IEEE J. Quantum Electron. 31(10), 1738–1741 (1995). 6. G. Xiao, and M. Bass, “A

Toward more efficient fabrication of high-density 2-D VCSEL arrays for spatial redundancy and/or multi-level signal communication

NASA Astrophysics Data System (ADS)

Roscher, Hendrik; Gerlach, Philipp; Khan, Faisal Nadeem; Kroner, Andrea; Stach, Martin; Weigl, Alexander; Michalzik, Rainer

2006-04-01

We present flip-chip attached high-speed VCSELs in 2-D arrays with record-high intra-cell packing densities. The advances of VCSEL array technology toward improved thermal performance and more efficient fabrication are reviewed, and the introduction of self-aligned features to these devices is pointed out. The structure of close-spaced wedge-shaped VCSELs is discussed and their static and dynamic characteristics are presented including an examination of the modal structure by near-field measurements. The lasers flip-chip bonded to a silicon-based test platform exhibit 3-dB and 10-dB bandwidths of 7.7 GHz and 9.8 GHz, respectively. Open 12.5 Gbit/s two-level eye patterns are demonstrated. We discuss the uses of high packing densities for the increase of the total amount of data throughput an array can deliver in the course of its life. One such approach is to provide up to two backup VCSELs per fiber channel that can extend the lifetimes of parallel transmitters through redundancy of light sources. Another is to increase the information density by using multiple VCSELs per 50 μm core diameter multimode fiber to generate more complex signals. A novel scheme using three butt-coupled VCSELs per fiber for the generation of four-level signals in the optical domain is proposed. First experiments are demonstrated using two VCSELs butt-coupled to the same standard glass fiber, each modulated with two-level signals to produce four-level signals at the photoreceiver. A four-level direct modulation of one VCSEL within a triple of devices produced first 20.6 Gbit/s (10.3 Gsymbols/s) four-level eyes, leaving two VCSELs as backup sources.

Non-Hermitian engineering of single mode two dimensional laser arrays

PubMed Central

Teimourpour, Mohammad H.; Ge, Li; Christodoulides, Demetrios N.; El-Ganainy, Ramy

2016-01-01

A new scheme for building two dimensional laser arrays that operate in the single supermode regime is proposed. This is done by introducing an optical coupling between the laser array and lossy pseudo-isospectral chains of photonic resonators. The spectrum of this discrete reservoir is tailored to suppress all the supermodes of the main array except the fundamental one. This spectral engineering is facilitated by employing the Householder transformation in conjunction with discrete supersymmetry. The proposed scheme is general and can in principle be used in different platforms such as VCSEL arrays and photonic crystal laser arrays. PMID:27698355

Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

NASA Astrophysics Data System (ADS)

King, Roger; Michalzik, Rainer; Jung, Christian; Grabherr, Martin; Eberhard, Franz; Jaeger, Roland; Schnitzer, Peter; Ebeling, Karl J.

1998-04-01

We have designed and fabricated 4 X 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of 2D, high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metallization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 micrometers are quite homogeneous. Arrays with 3 micrometers , 6 micrometers and 10 micrometers active diameter lasers have been investigated. The small devices show threshold currents of 600 (mu) A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz and transmitted pseudo random data at 8 Gbit/s channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of 1 X 2 mm2 footprint area.

VCSEL-based sensors for distance and velocity

NASA Astrophysics Data System (ADS)

Moench, Holger; Carpaij, Mark; Gerlach, Philipp; Gronenborn, Stephan; Gudde, Ralph; Hellmig, Jochen; Kolb, Johanna; van der Lee, Alexander

2016-03-01

VCSEL based sensors can measure distance and velocity in three dimensional space and are already produced in high quantities for professional and consumer applications. Several physical principles are used: VCSELs are applied as infrared illumination for surveillance cameras. High power arrays combined with imaging optics provide a uniform illumination of scenes up to a distance of several hundred meters. Time-of-flight methods use a pulsed VCSEL as light source, either with strong single pulses at low duty cycle or with pulse trains. Because of the sensitivity to background light and the strong decrease of the signal with distance several Watts of laser power are needed at a distance of up to 100m. VCSEL arrays enable power scaling and can provide very short pulses at higher power density. Applications range from extended functions in a smartphone over industrial sensors up to automotive LIDAR for driver assistance and autonomous driving. Self-mixing interference works with coherent laser photons scattered back into the cavity. It is therefore insensitive to environmental light. The method is used to measure target velocity and distance with very high accuracy at distances up to one meter. Single-mode VCSELs with integrated photodiode and grating stabilized polarization enable very compact and cost effective products. Besides the well know application as computer input device new applications with even higher accuracy or for speed over ground measurement in automobiles and up to 250km/h are investigated. All measurement methods exploit the known VCSEL properties like robustness, stability over temperature and the potential for packages with integrated optics and electronics. This makes VCSEL sensors ideally suited for new mass applications in consumer and automotive markets.

Trade-offs between lens complexity and real estate utilization in a free-space multichip global interconnection module.

PubMed

Milojkovic, Predrag; Christensen, Marc P; Haney, Michael W

2006-07-01

The FAST-Net (Free-space Accelerator for Switching Terabit Networks) concept uses an array of wide-field-of-view imaging lenses to realize a high-density shuffle interconnect pattern across an array of smart-pixel integrated circuits. To simplify the optics we evaluated the efficiency gained in replacing spherical surfaces with aspherical surfaces by exploiting the large disparity between narrow vertical cavity surface emitting laser (VCSEL) beams and the wide field of view of the imaging optics. We then analyzed trade-offs between lens complexity and chip real estate utilization and determined that there exists an optimal numerical aperture for VCSELs that maximizes their area density. The results provide a general framework for the design of wide-field-of-view free-space interconnection systems that incorporate high-density VCSEL arrays.

Compactly packaged monolithic four-wavelength VCSEL array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport.

PubMed

Lee, Eun-Gu; Mun, Sil-Gu; Lee, Sang Soo; Lee, Jyung Chan; Lee, Jong Hyun

2015-01-12

We report a cost-effective transmitter optical sub-assembly using a monolithic four-wavelength vertical-cavity surface-emitting laser (VCSEL) array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport using the data rate of common public radio interface option 6. The wavelength spacing is achieved using selectively etched cavity control layers and fine current adjustment. The differences in operating current and output power for maintaining the wavelength spacing of four VCSELs are <1.4 mA and <1 dB, respectively. Stable operation performance without mode hopping is observed, and error-free transmission under direct modulation is demonstrated over a 20-km single-mode fiber without any dispersion-compensation techniques.

Ultra-wideband WDM VCSEL arrays by lateral heterogeneous integration

NASA Astrophysics Data System (ADS)

Geske, Jon

Advancements in heterogeneous integration are a driving factor in the development of evermore sophisticated and functional electronic and photonic devices. Such advancements will merge the optical and electronic capabilities of different material systems onto a common integrated device platform. This thesis presents a new lateral heterogeneous integration technology called nonplanar wafer bonding. The technique is capable of integrating multiple dissimilar semiconductor device structures on the surface of a substrate in a single wafer bond step, leaving different integrated device structures adjacent to each other on the wafer surface. Material characterization and numerical simulations confirm that the material quality is not compromised during the process. Nonplanar wafer bonding is used to fabricate ultra-wideband wavelength division multiplexed (WDM) vertical-cavity surface-emitting laser (VCSEL) arrays. The optically-pumped VCSEL arrays span 140 nm from 1470 to 1610 nm, a record wavelength span for devices operating in this wavelength range. The array uses eight wavelength channels to span the 140 nm with all channels separated by precisely 20 nm. All channels in the array operate single mode to at least 65°C with output power uniformity of +/- 1 dB. The ultra-wideband WDM VCSEL arrays are a significant first step toward the development of a single-chip source for optical networks based on coarse WDM (CWDM), a low-cost alternative to traditional dense WDM. The CWDM VCSEL arrays make use of fully-oxidized distributed Bragg reflectors (DBRs) to provide the wideband reflectivity required for optical feedback and lasing across 140 rim. In addition, a novel optically-pumped active region design is presented. It is demonstrated, with an analytical model and experimental results, that the new active-region design significantly improves the carrier uniformity in the quantum wells and results in a 50% lasing threshold reduction and a 20°C improvement in the peak operating temperature of the devices. This thesis investigates the integration and fabrication technologies required to fabricate ultra-wideband WDM VCSEL arrays. The complete device design and fabrication process is presented along with actual device results from completed CWDM VCSEL arrays. Future recommendations for improvements are presented, along with a roadmap toward a final electrically-pumped single-chip source for CWDM applications.

Reliability of 1.3 micron VCSELs for metro area networks

NASA Astrophysics Data System (ADS)

Prakash, Simon R.; Chirovsky, Leo M. F.; Naone, Ryan L.; Galt, David; Kisker, Dave W.; Jackson, Andrew W.

2003-06-01

Vertical Cavity Surface Emitting Lasers (VCSELs) have been widely adopted in the 850nm data communications markets with great success. Using this technology as a basis, we have developed a 1.3 μm InGaAsN VCSEL and VCSEL Array technology for telecommunications applications. Since the reliability requirement of this market is less than 150 FITs over 20 years, we focused a great deal of development time on the reliability of the device, and so far have been able to predict an MTTF of over 13 million hours or 71 FITs. This report provides a brief summary of the characteristics of the VCSEL in various stress conditions and the methodology used to measure both the wear-out and random failure rates of the devices.

VCSEL transmission at 10 Gb/s for 20 km single mode fiber WDM-PON without dispersion compensation or injection locking

NASA Astrophysics Data System (ADS)

Gibbon, T. B.; Prince, K.; Pham, T. T.; Tatarczak, A.; Neumeyr, C.; Rönneberg, E.; Ortsiefer, M.; Monroy, I. Tafur

2011-01-01

Vertical Cavity Surface Emitting Lasers (VCSELs) are extremely cost effective, energy efficient optical sources ideal for passive optical access networks. However, wavelength chirp and chromatic dispersion severely limit VCSEL performance at bit rates of 10 Gb/s and above. We experimentally show how off-center wavelength filtering of the VCSEL spectrum at an array waveguide grating can be used to mitigate the effect of chirp and the dispersion penalty. Transmission at 10 Gb/s VCSEL over 23.6 km of single mode fiber is experimentally demonstrated, with a dispersion penalty of only 2.9 dB. Simulated results are also presented which show that off-center wavelength filtering can extend the 10 Gb/s network reach from 11.7 km to 25.8 km for a 4 dB dispersion penalty. This allows for cheap and simple dispersion mitigation in next generation VCSEL-based optical access networks.

A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Zhiyao; Sun, Kexu; Wang, Guanhua

This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/smore » operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting.« less

A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

DOE PAGES

Zeng, Zhiyao; Sun, Kexu; Wang, Guanhua; ...

2017-05-08

This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/smore » operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting.« less

Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

NASA Astrophysics Data System (ADS)

Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

2018-04-01

Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

Communication using VCSEL laser array

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

2008-01-01

Ultrafast directional beam switching, using coupled vertical cavity surface emitting lasers (VCSELs) is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and directional beam switching with angular differences of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches. A Mach-Zehnder interferometer, a Fabry-Perot etalon, or a semiconductor-based electro-absorption transmission channel, among others, can be used as a light modulator.

Lithographic VCSEL array multimode and single mode sources for sensing and 3D imaging

NASA Astrophysics Data System (ADS)

Leshin, J.; Li, M.; Beadsworth, J.; Yang, X.; Zhang, Y.; Tucker, F.; Eifert, L.; Deppe, D. G.

2016-05-01

Sensing applications along with free space data links can benefit from advanced laser sources that produce novel radiation patterns and tight spectral control for optical filtering. Vertical-cavity surface-emitting lasers (VCSELs) are being developed for these applications. While oxide VCSELs are being produced by most companies, a new type of oxide-free VCSEL is demonstrating many advantages in beam pattern, spectral control, and reliability. These lithographic VCSELs offer increased power density from a given aperture size, and enable dense integration of high efficiency and single mode elements that improve beam pattern. In this paper we present results for lithographic VCSELs and describes integration into military systems for very low cost pulsed applications, as well as continuouswave applications in novel sensing applications. The VCSELs are being developed for U.S. Army for soldier weapon engagement simulation training to improve beam pattern and spectral control. Wavelengths in the 904 nm to 990 nm ranges are being developed with the spectral control designed to eliminate unwanted water absorption bands from the data links. Multiple beams and radiation patterns based on highly compact packages are being investigated for improved target sensing and transmission fidelity in free space data links. These novel features based on the new VCSEL sources are also expected to find applications in 3-D imaging, proximity sensing and motion control, as well as single mode sensors such as atomic clocks and high speed data transmission.

High-power VCSEL systems and applications

NASA Astrophysics Data System (ADS)

Moench, Holger; Conrads, Ralf; Deppe, Carsten; Derra, Guenther; Gronenborn, Stephan; Gu, Xi; Heusler, Gero; Kolb, Johanna; Miller, Michael; Pekarski, Pavel; Pollmann-Retsch, Jens; Pruijmboom, Armand; Weichmann, Ulrich

2015-03-01

Easy system design, compactness and a uniform power distribution define the basic advantages of high power VCSEL systems. Full addressability in space and time add new dimensions for optimization and enable "digital photonic production". Many thermal processes benefit from the improved control i.e. heat is applied exactly where and when it is needed. The compact VCSEL systems can be integrated into most manufacturing equipment, replacing batch processes using large furnaces and reducing energy consumption. This paper will present how recent technological development of high power VCSEL systems will extend efficiency and flexibility of thermal processes and replace not only laser systems, lamps and furnaces but enable new ways of production. High power VCSEL systems are made from many VCSEL chips, each comprising thousands of low power VCSELs. Systems scalable in power from watts to multiple ten kilowatts and with various form factors utilize a common modular building block concept. Designs for reliable high power VCSEL arrays and systems can be developed and tested on each building block level and benefit from the low power density and excellent reliability of the VCSELs. Furthermore advanced assembly concepts aim to reduce the number of individual processes and components and make the whole system even more simple and reliable.

New VCSEL technology with scalability for single mode operation and densely integrated arrays

NASA Astrophysics Data System (ADS)

Zhao, Guowei; Demir, Abdullah; Freisem, Sabine; Zhang, Yu; Liu, Xiaohang; Deppe, Dennis G.

2011-06-01

Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm. The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of 142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D arrays and low power sensors.

780nm-range VCSEL array for laser printer system and other applications at Ricoh

NASA Astrophysics Data System (ADS)

Jikutani, Naoto; Itoh, Akihiro; Harasaka, Kazuhiro; Sasaki, Toshihide; Sato, Shunichi

2016-03-01

A 780 nm-range 40 channels vertical-cavity surface-emitting laser (VCSEL) array was developed as a writing light source for printers. A 15° off missoriented GaAs substrate, an aluminum-free GaInAsP/GaInP compressively-strained multiple quantum well and an anisotropic-shape transverse-mode filter were employed to control polarization characteristics. The anisotropic-shape transverse-mode filter also suppressed higher transverse-mode and enabled high-power single-mode operation. Thus, orthogonal-polarization suppression-ratio (OPSR) of over 22 dB and side-mode suppression-ratio (SMSR) of 30 dB were obtained at operation power of 3mW at same time for wide oxide-aperture range below 50 μm2. Moreover, a thermal resistance was reduced for 38% by increasing a thickness of high thermal conductivity layer (3λ/4-AlAs layer) near a cavity. By this structure, a peak-power increased to 1.3 times. Moreover, a power-fall caused by self-heating at pulse-rise was decreased to 10% and the one caused by a thermal-crosstalk between channels was decreased to 46%. The VCSEL array was mounted in a ceramic package with a tilted seal glass to prevent optical-crosstalk caused by other channels. Thus, we achieved stable-output and high-quality beam characteristics for long-duration pulse drive.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Near Field and Far Field Effects in the Taguchi-Optimized Design of AN InP/GaAs-BASED Double Wafer-Fused Mqw Long-Wavelength Vertical-Cavity Surface-Emitting Laser

NASA Astrophysics Data System (ADS)

Menon, P. S.; Kandiah, K.; Mandeep, J. S.; Shaari, S.; Apte, P. R.

Long-wavelength VCSELs (LW-VCSEL) operating in the 1.55 μm wavelength regime offer the advantages of low dispersion and optical loss in fiber optic transmission systems which are crucial in increasing data transmission speed and reducing implementation cost of fiber-to-the-home (FTTH) access networks. LW-VCSELs are attractive light sources because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication for two-dimensional arrays. This paper compares the near field and far field effects of the numerically investigated LW-VCSEL for various design parameters of the device. The optical intensity profile far from the device surface, in the Fraunhofer region, is important for the optical coupling of the laser with other optical components. The near field pattern is obtained from the structure output whereas the far-field pattern is essentially a two-dimensional fast Fourier Transform (FFT) of the near-field pattern. Design parameters such as the number of wells in the multi-quantum-well (MQW) region, the thickness of the MQW and the effect of using Taguchi's orthogonal array method to optimize the device design parameters on the near/far field patterns are evaluated in this paper. We have successfully increased the peak lasing power from an initial 4.84 mW to 12.38 mW at a bias voltage of 2 V and optical wavelength of 1.55 μm using Taguchi's orthogonal array. As a result of the Taguchi optimization and fine tuning, the device threshold current is found to increase along with a slight decrease in the modulation speed due to increased device widths.

VCSELs in short-pulse operation for time-of-flight applications

NASA Astrophysics Data System (ADS)

Moench, Holger; Gronenborn, Stephan; Gu, Xi; Gudde, Ralph; Herper, Markus; Kolb, Johanna; Miller, Michael; Smeets, Michael; Weigl, Alexander

2018-02-01

VCSEL arrays are the ideal light source for 3D imaging applications. The narrow emission spectrum and the ability for short pulses make them superior to LEDs. Combined with fast photodiodes or special camera chips spatial information can be obtained which is needed in diverse applications like camera autofocus, indoor navigation, 3D-object recognition, augmented reality or autonomously driving vehicles. Pulse operation at the ns scale and at low duty cycle can work with significantly higher current than traditionally used for VCSELs in continuous wave operation. With reduced thermal limitations at low average heat dissipation very high currents become feasible and tens of Watts output power have been realized with small VCSEL chips. The optical emission pattern of VCSELs can be tailored to the desired field of view using beam shaping elements. Such optical elements also enable laser safe class 1 products. A detailed analysis of the complete system and the operation mode is required to calculate the maximum permitted power for a safe system. The good VCSEL properties like robustness, stability over temperature and the potential for integrated solutions open a huge potential for VCSELs in new mass applications in the consumer and automotive markets.

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Iliadis, Agisilaos A.; Christou, Aristos

2003-07-01

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates

NASA Astrophysics Data System (ADS)

Kamath, K.; Bhattacharya, P.; Singh, J.

1997-05-01

Multispectral semiconductor laser arrays on single chip is demonstrated by molecular beam epitaxial (MBE) growth of {In0.2Ga0.8As}/{GaAs} quantum well lasers on GaAs (1 0 0) substrates patterned by dry etching. No regrowth is needed for simple edge emitting lasers. It was observed that the laser characteristics are not degraded by the patterned growth. The shift in the emission wavelength obtained by this method can be controlled by varying the width of the pre-patterned ridges as well as by selecting the regions with different number of vertical sidewalls on both sides. We have also shown that multispectral vertical cavity surface emitting laser (VCSEL) arrays can be made by this technique with a single regrowth.

Semiconductor Laser Joint Study Program with Rome Laboratory

DTIC Science & Technology

1994-09-01

VCSELs 3.3 Laser Wafer Growth by Molecular Beam Epitaxy 8 The VCSEL structures were grown by molecular beam ...cavity surface emittimg lasers ( VCSEL ), Optical 40 interconnects, Moelcular beam epitaxy It CECOOE 17. SECURfTY CLASWICATION SECURFlY CLASSIFICATION 1 Q...7 3.3 Laser Wafer Growth by Molecular Beam Epitax. ............ 8 3.4 VCSEL Fabrication Process ................................................

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Optical levitation and translation of a microscopic particle by use of multiple beams generated by vertical-cavity surface-emitting laser array sources.

PubMed

Ogura, Yusuke; Shirai, Nobuhiro; Tanida, Jun

2002-09-20

An optical levitation and translation method for a microscopic particle by use of the resultant force induced by multiple light beams is studied. We show dependence of the radiation pressure force on the illuminating distribution by numerical calculation, and we find that the strongest axial force is obtained by a specific spacing period of illuminating beams. Extending the optical manipulation technique by means of vertical-cavity surface-emitting laser (VCSEL) array sources [Appl. Opt. 40, 5430 (2001)], we are the first, to our knowledge, to demonstrate levitation of a particle and its translation while levitated by using a VCSEL array. The vertical position of the target particle can be controlled in a range of a few tens of micrometers with an accuracy of 2 microm or less. The analytical and experimental results suggest that use of multiple beams is an effective method to levitate a particle with low total illumination power. Some issues on the manipulation method that uses multiple beams are discussed.

A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Di; Liu, Chonghan; Chen, Jinghong

This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. As a result, themore » optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps.« less

A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

DOE PAGES

Guo, Di; Liu, Chonghan; Chen, Jinghong; ...

2016-03-21

This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. As a result, themore » optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps.« less

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

NASA Astrophysics Data System (ADS)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Electrically-Tunable Group Delays Using Quantum Wells in a Distributed Bragg Reflector

NASA Technical Reports Server (NTRS)

Nelson, Thomas R., Jr.; Loehr, John P.; Fork, Richard L.; Cole, Spencer; Jones, Darryl K.; Keys, Andrew

1999-01-01

There is a growing interest in the fabrication of semiconductor optical group delay lines for the development of phased arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs). We present a novel structure incorporating In(x)GA(1-x)As quantum wells in the GaAs quarter-wave layers of a GaAs/AlAs distributed Bragg reflector (DBR). Application of an electric field across the quantum wells leads to red shifting and peak broadening of the el-hhl exciton peak via the quantum-confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. We discuss the tradeoffs between the maximum amount of change in group delay versus absorption losses for such a device. We also compare a simple theoretical model to experimental results, and discuss both angle and position tuning of the BDR band edge resonance relative to the exciton absorption peak. The advantages of such monolithically grown devices for phased-array VCSEL applications will be detailed.

Modelling of the modulation properties of arsenide and nitride VCSELs

NASA Astrophysics Data System (ADS)

Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

2017-02-01

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

VCSEL proliferation

NASA Astrophysics Data System (ADS)

Tatum, Jim

2007-02-01

Since the commercialization of Vertical Cavity Surface Emitting Lasers (VCSELs) in 1996, Finisar's Advanced Optical Components Division has shipped well over 50 Million VCSELs. The vast majority of these were shipped into the data communications industry, which was essentially the only volume application until 2005. The driver for VCSEL manufacturing might well shift to the increasingly popular laser based optical mouse. The advantages of the laser based mouse over traditional LED mice include operation on a wider range of surfaces, higher resolution, and increased battery lifetime. What is the next application that will drive growth in VCSELs? This paper will offer a historical perspective on the emergence of VCSELs from the laboratory to reality, and the companies that have played key roles in VCSEL commercialization. Furthermore, a perspective on the market needs of future VCSEL development and applications is described.

Recent Advances of VCSEL Photonics

NASA Astrophysics Data System (ADS)

Koyama, Fumio

2006-12-01

A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years, and they are now key devices in local area networks using multimode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength extension of single-mode VCSELs and their wavelength integration/control. Also, this paper explores the potential and challenges for new functions of VCSELs toward optical signal processing.

Characterization of Nonlinear Effects in Optically Pumped Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-12-01

Vertical Cavity Surface Emitting Lasers ( VCSELs ) are an exciting...lines A-3 X AFIT/GEOiENP/93 D-01 Abstract The nonlinear characteristics of optically pumped Vertical Cavity Surface Emitting Lasers ( VCSELs ) are...uniformity of the VCSEL fabrication. xi Characterization of Nonlinear Effects in Optically Pumped Vertical Cavity Surface Emitting Lasers

Semi-automatic characterization and simulation of VCSEL devices for high speed VSR communications

NASA Astrophysics Data System (ADS)

Pellevrault, S.; Toffano, Z.; Destrez, A.; Pez, M.; Quentel, F.

2006-04-01

Very short range (VSR) high bit rate optical fiber communications are an emerging market dedicated to local area networks, digital displays or board to board interconnects within real time calculators. In this technology, a very fast way to exchange data with high noise immunity and low-cost is needed. Optical multimode graded index fibers are used here because they have electrical noise immunity and are easier to handle than monomode fibers. 850 nm VCSEL are used in VSR communications because of their low cost, direct on-wafer tests, and the possibility of manufacturing VCSEL arrays very easily compared to classical optical transceivers using edge-emitting laser diodes. Although much research has been carried out in temperature modeling on VCSEL emitters, few studies have been devoted to characterizations over a very broad range of temperatures. Nowadays, VCSEL VSR communications tend to be used in severe environments such as space, avionics and military equipments. Therefore, a simple way to characterize VCSEL emitters over a broad range of temperature is required. In this paper, we propose a complete characterization of the emitter part of 2.5 Gb/s opto-electrical transceiver modules operating from -40°C to +120°C using 850 nm VCSELs. Our method uses simple and semi-automatic measurements of a given set of chosen device parameters in order to make fast and efficient simulations.

VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

DTIC Science & Technology

2017-03-01

need of high efficiency with high temperature operation eliminates essentially all laser diode technologies except VCSELs. Therefore scaling of the...CW laser diode and separate modulator. Lower diagram circuitry shows the case for a DML VCSEL. The small gain volume and high speed modulation...speed of the modulator. However the CW laser that is needed for the modulator appears to create a technological roadblock for laser diode platforms

Optoelectronic Materials Center

DTIC Science & Technology

1991-06-11

surface - emitting GaAs/AIGaAs vertical - cavity laser (TJ- VCSEL ) incorporating wavelength-resonant...multi-quantum well, vertical cavity surface - emitted laser . This structure consists entirely of undoped epilayers, thus simplifying the problems of... cavity surface - emitting lasers ( VCSELs ) for doubling and for parallel optical data processing. Progress - GaAIAs/GaAs and InGaAs/GaAs RPG- VCSEL

Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

DTIC Science & Technology

2011-12-01

communication links using VCSEL arrays [1, 2], medical imaging using super luminescent diodes [3], and tunable lasers capable of remotely sensing...increase the efficiency of solar cells [6, 7, 8], vastly improve photo detector sensitivity [9], and provide optical memory storage densities predicted...semiconductor lasers” Applied Physics B: Lasers and Optics, Volume 90, Number 2, 2008, Pages 339-343. 6. Nozik, A.J. “Quantum dot solar cells

Experimental Investigation and Computer Modeling of Optical Switching in Distributed Bragg Reflector and Vertical Cavity Surface Emitting Laser Structures.

DTIC Science & Technology

1995-12-01

of a Molecular Beam Epitaxy (MBE) system prior to growing a Vertical Cavity Surface Emitting Laser ( VCSEL ). VCSEL bistability is discussed later in...addition, optical bistability 1 in the reflectivity of a DBR, as well as in the lasing power, wavelength, and beam divergence of a lasing VCSEL are...Spectral Reflectivity of AlGaAs/AlAs VCSEL Top DBR Mirror Cavity Bottom DBR Mirror Substrate Output Beam Resonance Pump Minimum Stop Band Figure 2. VCSEL

High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Shang, C. Y.; Feng, Y.; Yan, C. L.; Zhao, Y. J.; Wang, Y. X.; Wang, X. H.; Liu, G. J.

2011-02-01

The carrier conglomeration effect has been one of the main problems in developing electrically pumped high power vertical cavity surface emitting laser (VCSEL) with large aperture. We demonstrate a high power 808 nm VCSEL with multi-ring-shaped-aperture (MRSA) to weaken the carrier conglomeration effect. Compared with typical VCSEL with single large aperture (SLA), the 300-μm-diameter VCSEL with MRSA has more uniform near field and far field patterns. Moreover, MRSA laser exhibits maximal CW light output power 0.3 W which is about 3 times that of SLA laser. And the maximal wall-plug efficiency of 17.4% is achieved, higher than that of SLA laser by 10%.

Ultra-High Aggregate Bandwidth Two-Dimensional Multiple-Wavelength Diode Laser Arrays

DTIC Science & Technology

1993-12-09

during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate... molecular beam epitaxy (MBE) crystal growth, the GaAs growth rate is highly sensitive to the substrate temperature above 650"C (2], a GaAs/AIGaAs... epitaxial growth technique to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer

Self-Sustained Ultrafast Pulsation in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng

2001-01-01

High frequency, narrow-band self-pulsating operation is demonstrated in two coupled vertical-cavity surface-emitting lasers (VCSELs). The coupled VCSELs provide an ideal source for high-repetition rate (over 40 GHz), sinusoidal-like modulated laser source with Gaussian-like near- and far-field profiles. We also show that the frequency of the modulation can be tuned by the inter-VCSEL separation or by DC-bias level.

MBE growth of VCSELs for high volume applications

NASA Astrophysics Data System (ADS)

Jäger, Roland; Riedl, Michael C.

2011-05-01

Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

Efficient Heat Dissipation of Uncooled 400-Gbps (16×25-Gbps) Optical Transceiver Employing Multimode VCSEL and PD Arrays

NASA Astrophysics Data System (ADS)

Shih, Tien-Tsorng; Chi, Yu-Chieh; Wang, Ruei-Nian; Wu, Chao-Hsin; Huang, Jian-Jang; Jou, Jau-Ji; Lee, Tai-Cheng; Kuo, Hao-Chung; Lin, Gong-Ru; Cheng, Wood-Hi

2017-04-01

An effective heat dissipation of uncooled 400-Gbps (16×25-Gbps) form-factor pluggable (CDFP) optical transceiver module employing chip-on-board multimode 25-Gbps vertical-surface-emitting-laser (VCSEL) and 25-Gbps photodiode (PD) arrays mounted on a brass metal core embedded within a printed circuit board (PCB) is proposed and demonstrated. This new scheme of the hollow PCB filling with thermally-dissipated brass metal core was simulated and used for high temperature and long term stability operation of the proposed 400-Gbps CDFP transceiver. During one-hour testing, a red-shift of central wavelength by 0.4-nm corresponding temperature increment of 6.7 °C was observed with the brass core assisted cooler module. Such a temperature change was significantly lower than that of 28.3 °C for the optical transceiver driven with conventional circuit board. After 100-m distance transmission over a multimode fiber (OM4), the 400-Gbps CDFP transceiver exhibited dispersion penalty of 2.6-dB, power budget of ≧ 3-dB, link loss of ≦ 0.63-dB, mask margin of 20%, and bit error rate (BER) of <10-12 with maintained stability more than one hour. The developed 400-Gbps CDFP transceiver module employing low-power consumption VCSEL and PD arrays, effective coupling lens arrays, and well thermal-dissipation brass metal core is suitable for use in the low-cost and high-performance data center applications.

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

NASA Astrophysics Data System (ADS)

Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

2009-02-01

We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin

2011-09-01

Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth:more » (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.« less

Experimental demonstration of the optical multi-mesh hypercube: scaleable interconnection network for multiprocessors and multicomputers.

PubMed

Louri, A; Furlonge, S; Neocleous, C

1996-12-10

A prototype of a novel topology for scaleable optical interconnection networks called the optical multi-mesh hypercube (OMMH) is experimentally demonstrated to as high as a 150-Mbit/s data rate (2(7) - 1 nonreturn-to-zero pseudo-random data pattern) at a bit error rate of 10(-13)/link by the use of commercially available devices. OMMH is a scaleable network [Appl. Opt. 33, 7558 (1994); J. Lightwave Technol. 12, 704 (1994)] architecture that combines the positive features of the hypercube (small diameter, connectivity, symmetry, simple routing, and fault tolerance) and the mesh (constant node degree and size scaleability). The optical implementation method is divided into two levels: high-density local connections for the hypercube modules, and high-bit-rate, low-density, long connections for the mesh links connecting the hypercube modules. Free-space imaging systems utilizing vertical-cavity surface-emitting laser (VCSEL) arrays, lenslet arrays, space-invariant holographic techniques, and photodiode arrays are demonstrated for the local connections. Optobus fiber interconnects from Motorola are used for the long-distance connections. The OMMH was optimized to operate at the data rate of Motorola's Optobus (10-bit-wide, VCSEL-based bidirectional data interconnects at 150 Mbits/s). Difficulties encountered included the varying fan-out efficiencies of the different orders of the hologram, misalignment sensitivity of the free-space links, low power (1 mW) of the individual VCSEL's, and noise.

A fundamental mode Nd:GdVO4 laser pumped by a large aperture 808 nm VCSEL

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Ma, J. L.; Yan, C. L.; Liu, G. J.; Ma, X. H.; Gong, J. F.; Feng, Y.; Wei, Z. P.; Wang, Y. X.; Zhao, Y. J.

2013-05-01

A fundamental mode Nd:GdVO4 laser pumped by a vertical cavity surface emitting laser (VCSEL) is experimentally demonstrated. The VCSEL has a circular output-beam which makes it easier for it to be directly coupled to a Nd:GdVO4 microcrystal. In our research, a large aperture 808 nm VCSEL, with a multi-ring-shaped aperture (MRSA) and an almost Gaussian-shaped far-field profile, is used as the pumping source. Experimental results for the Nd:GdVO4 laser pumped by the VCSEL are presented. The maximum output peak power of 0.754 W is obtained under a pump peak power of 1.3 W, and the corresponding opto-optic conversion efficiency is 58.1%. The average slope efficiency is 65.8% from the threshold pump power of 0.2 W to the pump power of 1.3 W. The laser beam quality factors are measured to be {M}x2=1.2 0 and {M}y2=1.1 5.

Progress and challenges in electrically pumped GaN-based VCSELs

NASA Astrophysics Data System (ADS)

Haglund, A.; Hashemi, E.; Bengtsson, J.; Gustavsson, J.; Stattin, M.; Calciati, M.; Goano, M.

2016-04-01

ABSTRACT The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm2. The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

1310nm VCSELs in 1-10Gb/s commercial applications

NASA Astrophysics Data System (ADS)

Jewell, Jack; Graham, Luke; Crom, Max; Maranowski, Kevin; Smith, Joseph; Fanning, Tom

2006-02-01

Beginning with 4 Gigabit/sec Fibre-Channel, 1310nm vertical-cavity surface-emitting lasers (VCSELs) are now entering the marketplace. Such VCSELs perform like distributed feedback lasers but have drive currents and heat dissipation like 850nm VCSELs, making them ideal for today's high-performance interconnects and the only choice for the next step in increased interconnection density. Transceiver performances at 4 and 10 Gigabits/sec over fiber lengths 10-40km are presented. The active material is extremely robust, resulting in excellent reliability.

Optical Characterization of IV-VI Mid-Infrared VCSEL

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting laser ( VCSEL ). A power...il quantum well (QW) devices [5], there has little progress until recently in developing mid-IR vertical cavity surface emitting laser ( VCSEL ). This...structures and PbSrSe thin films were grown on Bat; (111) substrates by molecular beam epitaxy ( MBE ) and characterized by Fourier transform infi-ared

Bit Error Ratio Test Equipment for High Speed Vertical Cavity Transistor Laser and MicroCavity VCSEL and Photo Receiver

DTIC Science & Technology

2015-08-31

Ratio Test Equipment for High Speed Vertical Cavity Transistor Laser & MicroCavity VCSEL and Photo Receiver The views, opinions and/or findings...suggesstions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis...for High Speed Vertical Cavity Transistor Laser & MicroCavity VCSEL and Photo Receiver Report Title In the previous DURIP award (W911NF-13-1-0287

Laser tweezer actuated microphotonic array devices for high resolution imaging and analysis in chip-based biosystems

NASA Astrophysics Data System (ADS)

Birkbeck, Aaron L.

A new technology is developed that functionally integrates arrays of lasers and micro-optics into microfluidic systems for the purpose of imaging, analyzing, and manipulating objects and biological cells. In general, the devices and technologies emerging from this area either lack functionality through the reliance on mechanical systems or provide a serial-based, time consuming approach. As compared to the current state of art, our all-optical design methodology has several distinguishing features, such as parallelism, high efficiency, low power, auto-alignment, and high yield fabrication methods, which all contribute to minimizing the cost of the integration process. The potential use of vertical cavity surface emitting lasers (VCSELs) for the creation of two-dimensional arrays of laser optical tweezers that perform independently controlled, parallel capture, and transport of large numbers of individual objects and biological cells is investigated. One of the primary biological applications for which VCSEL array sourced laser optical tweezers are considered is the formation of engineered tissues through the manipulation and spatial arrangement of different types of cells in a co-culture. Creating devices that combine laser optical tweezers with select micro-optical components permits optical imaging and analysis functions to take place inside the microfluidic channel. One such device is a micro-optical spatial filter whose motion and alignment is controlled using a laser optical tweezer. Unlike conventional spatial filter systems, our device utilizes a refractive optical element that is directly incorporated onto the lithographically patterned spatial filter. This allows the micro-optical spatial filter to automatically align itself in three-dimensions to the focal point of the microscope objective, where it then filters out the higher frequency additive noise components present in the laser beam. As a means of performing high resolution imaging in the microfluidic channel, we developed a novel technique that integrates the capacity of a laser tweezer to optically trap and manipulate objects in three-dimensions with the resolution-enhanced imaging capabilities of a solid immersion lens (SIL). In our design, the SIL is a free-floating device whose imaging beam, motion control and alignment is provided by a laser optical tweezer, which allows the microfluidic SIL to image in areas that are inaccessible to traditional solid immersion microscopes.

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers.

PubMed

Germann, Tim David; Hofmann, Werner; Nadtochiy, Alexey M; Schulze, Jan-Hindrik; Mutig, Alex; Strittmatter, André; Bimberg, Dieter

2012-02-27

Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow for a detailed physical understanding of this complex compound cavity laser system. The EOM VCSEL light output is investigated to identify optimal working points. An electro-optic resonance feature triggered by the quantum confined Stark effect is used to modulate individual VCSEL modes by more than 20 dB with an extremely small EOM voltage change of less than 100 mV. Spectral mode analysis reveals modulation of higher order modes and very low wavelength chirp of < 0.5 nm. Dynamic experiments and simulation predict an intrinsic bandwidth of the EOM VCSEL exceeding 50 GHz.

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

Studying the VCSEL to VCSEL injection locking for enhanced chromatic dispersion compensation

NASA Astrophysics Data System (ADS)

Li, Linfu

2010-11-01

In order to supply a theoretical guide for digital chaotic telecommunication, the technique of Optical injection locking (OIL) of semiconductor lasers on the chaotic communication have been investigated based on the theoretical models used to describe the dynamics of solitary VCSEL subjected to the external optical injection and signal transmission in fiber. The numerical simulation results show that, the frequency chirp and time-resolved chirp are reduced in magnitude, using a VCSEL laser as master and another VCSEL as slave, it leads to a no-penalty transmission over 50 km of uncompensated in SSMF at 10Gb/s, and it could be higher rate and more remote if there were appropriate compensation.

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-08-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ˜3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ˜550 μW, compared to ˜80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Li, Chung-Yi; Tsai, Wen-Shing

2018-02-01

This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

Single frequency stable VCSEL as a compact source for interferometry and vibrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dudzik, Grzegorz; Rzepka, Janusz

2010-05-28

Developing an innovative PS-DAVLL (Polarization Switching DAVLL) method of frequency stabilization, which used a ferroelectric liquid crystal cell as quarter wave plate, rubidium cell and developed ultra-stable current source, allowed to obtain a frequency stability of 10{sup -9}(frequency reproducibility of 1,2centre dot10{sup -8}) and reductions in external dimensions of laser source. The total power consumption is only 1,5 Watt. Because stabilization method used in the frequency standard is insensitive to vibration, the semiconductor laser interferometer was built for measuring range over one meter, which can also be used in industry for the accurate measurement of displacements with an accuracy ofmore » 1[mum/m]. Measurements of the VCSEL laser parameters are important from the standpoint of its use in laser interferometry or vibrometry, like narrow emission line DELTAnu{sub FWHM} = 70[MHz] equivalent of this laser type and stability of linear polarization of VCSEL laser. The undoubted advantage of the constructed laser source is the lack of mode-hopping effect during continuous work of VCSEL.« less

Development of GaInNAs-based 1.3-μm VCSEL

NASA Astrophysics Data System (ADS)

Ramakrishnan, Arun; Ebbinghaus, G.; Lima, A.; Supper, D.; Kristen, Guenter; Popp, M.; Degen, C.; Althaus, H.-L.; Killer, T.; Scholz, R.; Melinde, M.; Sauter, M.; Weigert, M.; Riechert, Henning; Steinle, Gunther

2003-12-01

In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.

VCSEL optical subassembly for avionics fiber optic modules

NASA Astrophysics Data System (ADS)

Hager, Harold E.; Chan, Eric Y.; Beranek, Mark W.; Hong, Chi-Shain

1996-04-01

With the growing maturation of vertical cavity surface emitting laser (VCSEL) technology as a source of commercial off-the-shelf components, the question of VCSEL suitability for use in avionics-qualifiable fiber-optic systems naturally follows. This paper addresses avionics suitability from two perspectives. First, measured performance and burn-in reliability results, determined from characterization of Honeywell VCSELs, are compared with application-based military and commercial avionics environmental requirements. Second, design guidelines for developing a cost-effective VCSEL optical subassembly (VCSEL/OSA) are outlined.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

VCSEL Applications and Simulation

NASA Technical Reports Server (NTRS)

Cheung, Samson; Goorjian, Peter; Ning, Cun-Zheng; Li, Jian-Zhong

2000-01-01

This viewgraph presentation gives an overview of Vertical Cavity Surface Emitting Laser (VCSEL) simulation and its applications. Details are given on the optical interconnection in information technology of VCSEL, the formulation of the simulation, its numeric algorithm, and the computational results.

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.

2015-08-31

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing inmore » the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.« less

VCSELs for datacom applications

NASA Astrophysics Data System (ADS)

Wipiejewski, Torsten; Wolf, Hans-Dieter; Korte, Lutz; Huber, Wolfgang; Kristen, Guenter; Hoyler, Charlotte; Hedrich, Harald; Kleinbub, Oliver; Albrecht, Tony; Mueller, Juergen; Orth, Andreas; Spika, Zeljko; Lutgen, Stephan; Pflaeging, Hartwig; Harrasser, Joerg; Droegemueller, Karsten; Plickert, Volker; Kuhl, Detlef; Blank, Juergen; Pietsch, Doris; Stange, Herwig; Karstensen, Holger

1999-04-01

The use of oxide confined VCSELs in datacom applications is demonstrated. The devices exhibit low threshold currents of approximately 3 mA and low electrical series resistance of about 50 (Omega) . The emission wavelength is in the 850 nm range. Life times of the devices are several million hours under normal operating conditions. VCSEL arrays are employed in a high performance parallel optical link called PAROLITM. This optical ink provides 12 parallel channels with a total bandwidth exceeding 12 Gbit/s. The VCSELs optimized for the parallel optical link show excellent threshold current uniformity between channels of < 50 (mu) A. The array life time drops compared to a single device, but is still larger than 1 million hours.

Study on VCSEL laser heating chip in nuclear magnetic resonance gyroscope

NASA Astrophysics Data System (ADS)

Liang, Xiaoyang; Zhou, Binquan; Wu, Wenfeng; Jia, Yuchen; Wang, Jing

2017-10-01

In recent years, atomic gyroscope has become an important direction of inertial navigation. Nuclear magnetic resonance gyroscope has a stronger advantage in the miniaturization of the size. In atomic gyroscope, the lasers are indispensable devices which has an important effect on the improvement of the gyroscope performance. The frequency stability of the VCSEL lasers requires high precision control of temperature. However, the heating current of the laser will definitely bring in the magnetic field, and the sensitive device, alkali vapor cell, is very sensitive to the magnetic field, so that the metal pattern of the heating chip should be designed ingeniously to eliminate the magnetic field introduced by the heating current. In this paper, a heating chip was fabricated by MEMS process, i.e. depositing platinum on semiconductor substrates. Platinum has long been considered as a good resistance material used for measuring temperature The VCSEL laser chip is fixed in the center of the heating chip. The thermometer resistor measures the temperature of the heating chip, which can be considered as the same temperature of the VCSEL laser chip, by turning the temperature signal into voltage signal. The FPGA chip is used as a micro controller, and combined with PID control algorithm constitute a closed loop control circuit. The voltage applied to the heating resistor wire is modified to achieve the temperature control of the VCSEL laser. In this way, the laser frequency can be controlled stably and easily. Ultimately, the temperature stability can be achieved better than 100mK.

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

NASA Astrophysics Data System (ADS)

Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

2018-01-01

Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

Semiconductor laser joint study program with Rome Laboratory

NASA Astrophysics Data System (ADS)

Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

1994-09-01

A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

Spatial Light Modulators with Arbitrary Quantum Well Profiles

DTIC Science & Technology

1991-01-14

vertical cavity surface emitting lasers ( VCSEL ) is also...aDlications stemming from the research effort. An application of the MBE compositional grading technique to vertical cavity surface emitting lasers was described in section 2e. G. Other statements ... cavity surface emitting laser ( VCSEL ). This uses compositionally graded Bragg reflectors to reduce the electrical resistance of the mirrors

Photonic generation of polarization-resolved wideband chaos with time-delay concealment in three-cascaded vertical-cavity surface-emitting lasers.

PubMed

Liu, Huijie; Li, Nianqiang; Zhao, Qingchun

2015-05-10

Optical chaos generated by chaotic lasers has been widely used in several important applications, such as chaos-based communications and high-speed random-number generators. However, these applications are susceptible to degradation by the presence of time-delay (TD) signature identified from the chaotic output. Here we propose to achieve the concealment of TD signature, along with the enhancement of chaos bandwidth, in three-cascaded vertical-cavity surface-emitting lasers (VCSELs). The cascaded system is composed of an external-cavity master VCSEL, a solitary intermediate VCSEL, and a solitary slave VCSEL. Through mapping the evolutions of TD signature and chaos bandwidth in the parameter space of the injection strength and frequency detuning, photonic generation of polarization-resolved wideband chaos with TD concealment is numerically demonstrated for wide regions of the injection parameters.

Compact multiwavelength transmitter module for multimode fiber optic ribbon cable

DOEpatents

Deri, Robert J.; Pocha, Michael D.; Larson, Michael C.; Garrett, Henry E.

2002-01-01

A compact multiwavelength transmitter module for multimode fiber optic ribbon cable, which couples light from an M.times.N array of emitters onto N fibers, where the M wavelength may be distributed across two or more vertical-cavity surface-emitting laser (VCSEL) chips, and combining emitters and multiplexer into a compact package that is compatible with placement on a printed circuit board. A key feature is bringing together two emitter arrays fabricated on different substrates--each array designed for a different wavelength--into close physical proximity. Another key feature is to compactly and efficiently combine the light from two or more clusters of optical emitters, each in a different wavelength band, into a fiber ribbon.

WDM Nanoscale Laser Diodes for Si Photonic Interconnects

DTIC Science & Technology

2016-07-25

mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects

NASA Astrophysics Data System (ADS)

Mutig, Alex; Lott, James A.; Blokhin, Sergey A.; Moser, Philip; Wolf, Philip; Hofmann, Werner; Nadtochiy, Alexey M.; Bimberg, Dieter

2011-03-01

The progressive penetration of optical communication links into traditional copper interconnect markets greatly expands the applications of vertical cavity surface emitting lasers (VCSELs) for the next-generation of board-to-board, moduleto- module, chip-to-chip, and on-chip optical interconnects. Stability of the VCSEL parameters at high temperatures is indispensable for such applications, since these lasers typically reside directly on or near integrated circuit chips. Here we present 980 nm oxide-confined VCSELs operating error-free at bit rates up to 25 Gbit/s at temperatures as high as 85 °C without adjustment of the drive current and peak-to-peak modulation voltage. The driver design is therefore simplified and the power consumption of the driver electronics is lowered, reducing the production and operational costs. Small and large signal modulation experiments at various temperatures from 20 up to 85 °C for lasers with different oxide aperture diameters are presented in order to analyze the physical processes controlling the performance of the VCSELs. Temperature insensitive maximum -3 dB bandwidths of around 13-15 GHz for VCSELs with aperture diameters of 10 μm and corresponding parasitic cut-off frequencies exceeding 22 GHz are observed. Presented results demonstrate the suitability of our VCSELs for practical high speed and high temperature stable short-reach optical links.

Red vertical cavity surface emitting lasers (VCSELs) for consumer applications

NASA Astrophysics Data System (ADS)

Duggan, Geoffrey; Barrow, David A.; Calvert, Tim; Maute, Markus; Hung, Vincent; McGarvey, Brian; Lambkin, John D.; Wipiejewski, Torsten

2008-02-01

There are many potential applications of visible, red (650nm - 690nm) vertical cavity surface emitting lasers (VCSELs) including high speed (Gb) communications using plastic optical fiber (POF), laser mouse sensors, metrology, position sensing. Uncertainty regarding the reliability of red VCSELs has long been perceived as the most significant roadblock to their commercialization. In this paper we will present data on red VCSELs optimized for performance and reliability that will allow exploitation of this class of VCSEL in a wide range of high volume consumer, communication and medical applications. VCSELs operating at ~665nm have been fabricated on 4" GaAs substrates using MOCVD as the growth process and using standard VCSEL processing technology. The active region is AlGaInP-based and the DBR mirrors are made from AlGaAs. Threshold currents are typically less than 2mA, the devices operate up to >60C and the light output is polarized in a stable, linear characteristic over all normal operating conditions. The 3dB modulation bandwidth of the devices is in excess of 3GHz and we have demonstrated the operation of a transceiver module operating at 1.25Gb/s over both SI-POF and GI-POF. Ageing experiments carried out using a matrix of current and temperature stress conditions allows us to estimate that the time to failure of 1% of devices (TT1%F) is over 200,000h for reasonable use conditions - making these red VCSELs ready for commercial exploitation in a variety of consumer-type applications. Experiments using appropriate pulsed driving conditions have resulted in operation of 665nm VCSELs at a temperature of 85°C whilst still offering powers useable for eye-safe free space and POF communications.

Flip-chip integration of tilted VCSELs onto a silicon photonic integrated circuit.

PubMed

Lu, Huihui; Lee, Jun Su; Zhao, Yan; Scarcella, Carmelo; Cardile, Paolo; Daly, Aidan; Ortsiefer, Markus; Carroll, Lee; O'Brien, Peter

2016-07-25

In this article we describe a cost-effective approach for hybrid laser integration, in which vertical cavity surface emitting lasers (VCSELs) are passively-aligned and flip-chip bonded to a Si photonic integrated circuit (PIC), with a tilt-angle optimized for optical-insertion into standard grating-couplers. A tilt-angle of 10° is achieved by controlling the reflow of the solder ball deposition used for the electrical-contacting and mechanical-bonding of the VCSEL to the PIC. After flip-chip integration, the VCSEL-to-PIC insertion loss is -11.8 dB, indicating an excess coupling penalty of -5.9 dB, compared to Fibre-to-PIC coupling. Finite difference time domain simulations indicate that the penalty arises from the relatively poor match between the VCSEL mode and the grating-coupler.

Optically Programmable Field Programmable Gate Arrays (FPGA) Systems

DTIC Science & Technology

2004-01-01

VCSEL requires placing the array far enough as to overlap the entire footprint of the signal beam in order to record the hologram. Therefore, these...hologram that self-focuses, due to phase -conjugation, on the array of detectors in the chip. VC A 10 m m 10 mm 18mm 16mm SEL RRAY OPTICAL MEMORY LOGIC...the VCSEL array , the chip and the optical material, and the requirements they have to meet for their use in the OPGA system. Section

Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.

2018-02-01

VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array

DOE PAGES

Zeng, Z.; Zhang, T.; Wang, G.; ...

2017-02-28

Here, a High-speed and low-power VCSEL driver is an important component of the Versatile Link for the high-luminosity LHC (HL-LHC) experiments. A compact low-power radiation-hard 4 × 10 Gb/s VCSEL driver array (LDQ10) has been developed in 65 nm CMOS technology. Each channel in LDQ10 can provide a modulation current up to 8 mA and bias current up to 12 mA. Edge pre-emphasis is employed to compensate for the bandwidth limitations due to parasitic and the turn-on delay of VCSEL devices. LDQ10 occupies a chip area of 1900 μm × 1700 μm and consumes 130 mW power for typical currentmore » settings. The modulation amplitude degrades less than 5% after 300 Mrad total ionizing dose. LDQ10 can be directly wire-bonded to the VCSEL array and it is a suitable candidate for the Versatile Link.« less

Three-Dimensional Waveguide Arrays for Coupling Between Fiber-Optic Connectors and Surface-Mounted Optoelectronic Devices

NASA Astrophysics Data System (ADS)

Hiramatsu, Seiki; Kinoshita, Masao

2005-09-01

This paper describes the fabrication of novel surface-mountable waveguide connectors and presents test results for them. To ensure more highly integrated and low-cost fabrication, we propose new three-dimensional (3-D) waveguide arrays that feature two-dimensionally integrated optical inputs/outputs and optical path redirection. A wafer-level stack and lamination process was used to fabricate the waveguide arrays. Vertical-cavity surface-emitting lasers (VCSELs) and photodiodes were directly mounted on the arrays and combined with mechanical transferable ferrule using active alignment. With the help of a flip-chip bonder, the waveguide connectors were mounted on a printed circuit board by solder bumps. Using mechanical transferable connectors, which can easily plug into the waveguide connectors, we obtained multi-gigabits-per-second transmission performance.

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-06-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-03-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

Investigation of vertical cavity surface emitting laser dynamics for neuromorphic photonic systems

NASA Astrophysics Data System (ADS)

Hurtado, A.; Schires, K.; Henning, I. D.; Adams, M. J.

2012-03-01

We report an approach based upon vertical cavity surface emitting lasers (VCSELs) to reproduce optically different behaviors exhibited by biological neurons but on a much faster timescale. The technique proposed is based on the polarization switching and nonlinear dynamics induced in a single VCSEL under polarized optical injection. The particular attributes of VCSELs and the simple experimental configuration used in this work offer prospects of fast, reconfigurable processing elements with excellent fan-out and scaling potentials for use in future computational paradigms and artificial neural networks.

Method for accurate growth of vertical-cavity surface-emitting lasers

DOEpatents

Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

1995-01-01

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.

Tunable vertical cavity surface emitting lasers for use in the near infrared biological window

NASA Astrophysics Data System (ADS)

Kitsmiller, Vincent J.; Dummer, Matthew; Johnson, Klein; O'Sullivan, Thomas D.

2018-02-01

We present a near-infrared tunable vertical cavity surface emitting laser (VCSEL) based upon a unique electrothermally tunable microelectromechanical systems (MEMS) topside mirror designed for tissue imaging and sensing. At room temperature, the laser is tunable from 769-782nm with single mode CW output and a peak output power of 1.3mW. We show that the tunable VCSEL is suitable for use in frequency domain diffuse optical spectroscopy by measuring the optical properties of a tissue-simulating phantom over the tunable range. These results indicate that tunable VCSELs may be an attractive choice to enable high spectral resolution optical sensing in a wearable format.

Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process

DTIC Science & Technology

1994-03-01

Epitaxial structure of vertical cavity surface - emitting laser ( VCSEL ...diameter (75 tum < d< 150 prm) vertical - cavity surface - emitting lasers fabricated from an epitaxial structure containing a single In0 .2Ga 8.,As quantum...development of vertical - cavity surface - emitting lasers ( VCSELs ) [1] has enabled III-V semiconductor technology to be applied to cer- tain optical

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, C.; Margalith, T.; Ng, T. K.; DenBaars, S. P.; Ooi, B. S.; Speck, J. S.; Nakamura, S.

2016-02-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 μm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 μW with a threshold current density of ~3.5 kA/cm2, while the ITO VCSELs show peak powers of ~80 μW and threshold current densities of ~7 kA/cm2.

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Xia, Jinan; Hoan O, Beom; Gol Lee, Seung; Hang Lee, El

2005-03-01

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.

4 channel × 10 Gb/s bidirectional optical subassembly using silicon optical bench with precise passive optical alignment.

PubMed

Kang, Eun Kyu; Lee, Yong Woo; Ravindran, Sooraj; Lee, Jun Ki; Choi, Hee Ju; Ju, Gun Wu; Min, Jung Wook; Song, Young Min; Sohn, Ik-Bu; Lee, Yong Tak

2016-05-16

We demonstrate an advanced structure for optical interconnect consisting of 4 channel × 10 Gb/s bidirectional optical subassembly (BOSA) formed using silicon optical bench (SiOB) with tapered fiber guiding holes (TFGHs) for precise and passive optical alignment of vertical-cavity surface-emitting laser (VCSEL)-to-multi mode fiber (MMF) and MMF-to-photodiode (PD). The co-planar waveguide (CPW) transmission line (Tline) was formed on the backside of silicon substrate to reduce the insertion loss of electrical data signal. The 4 channel VCSEL and PD array are attached at the end of CPW Tline using a flip-chip bonder and solder pad. The 12-channel ribbon fiber is simply inserted into the TFGHs of SiOB and is passively aligned to the VCSEL and PD in which no additional coupling optics are required. The fabricated BOSA shows high coupling efficiency and good performance with the clearly open eye patterns and a very low bit error rate of less than 10^-12 order at a data rate of 10 Gb/s with a PRBS pattern of 2³¹-1.

Design and Characterization of Optically Pumped Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1992-12-01

technology to make VCSELs (e.g. Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD)) motivated the research in this area over the...Resistances for Current Injected VCSELs 3-14 4.1. Equipment Configuration used for Output Beam Characterization . . . 4-1 4.2. Optical Pump Beam and Focusing...pursued over the past few years because VCSELs have ad- ditional inherent advantages. The VCSEL design exhibits better exit beam quality, is of smaller

Optical displacement sensor

DOEpatents

Carr, Dustin W [Albuquerque, NM

2008-04-08

An optical displacement sensor is disclosed which uses a vertical-cavity surface-emitting laser (VCSEL) coupled to an optical cavity formed by a moveable membrane and an output mirror of the VCSEL. This arrangement renders the lasing characteristics of the VCSEL sensitive to any movement of the membrane produced by sound, vibrations, pressure changes, acceleration, etc. Some embodiments of the optical displacement sensor can further include a light-reflective diffractive lens located on the membrane or adjacent to the VCSEL to control the amount of lasing light coupled back into the VCSEL. A photodetector detects a portion of the lasing light from the VCSEL to provide an electrical output signal for the optical displacement sensor which varies with the movement of the membrane.

Time-delay signature of chaos in 1550 nm VCSELs with variable-polarization FBG feedback.

PubMed

Li, Yan; Wu, Zheng-Mao; Zhong, Zhu-Qiang; Yang, Xian-Jie; Mao, Song; Xia, Guang-Qiong

2014-08-11

Based on the framework of spin-flip model (SFM), the output characteristics of a 1550 nm vertical-cavity surface-emitting laser (VCSEL) subject to variable-polarization fiber Bragg grating (FBG) feedback (VPFBGF) have been investigated. With the aid of the self-correlation function (SF) and the permutation entropy (PE) function, the time-delay signature (TDS) of chaos in the VPFBGF-VCSEL is evaluated, and then the influences of the operation parameters on the TDS of chaos are analyzed. The results show that the TDS of chaos can be suppressed efficiently through selecting suitable coupling coefficient and feedback rate of the FBG, and is weaker than that of chaos generated by traditional variable-polarization mirror feedback VCSELs (VPMF-VCSELs) or polarization-preserved FBG feedback VCSELs (PPFBGF-VCSELs).

Ultrafast Directional Beam Switching in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast directional beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 microns in diameter placed about 1 micron apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degrees.

Method for accurate growth of vertical-cavity surface-emitting lasers

DOEpatents

Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

1995-03-14

The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.

MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

NASA Astrophysics Data System (ADS)

Wu, C. Z.; Tsou, Y.; Tsai, C. M.

1999-05-01

Evaluation of producing a vertical-cavity surface-emitting laser (VCSEL) epitaxial structure by molecular beam epitaxy (MBE) without resorting to any real-time monitoring technique is reported. Continuous grading of Al xGa 1- xAs between x=0.12 to x=0.92 was simply achieved by changing the Al and Ga cell temperatures in no more than three steps per DBR period. Highly uniform DBR and VCSEL structures were demonstrated with a multi-wafer MBE system. Run-to-run standard deviation of reflectance spectrum center wavelength was 0.5% and 1.4% for VCSEL etalon wavelength.

Far-field emission characteristics and linewidth measurements of surface micro-machined MEMS tunable VCSELs

NASA Astrophysics Data System (ADS)

Paul, Sujoy; Gierl, Christian; Gründl, Tobias; Zogal, Karolina; Meissner, Peter; Amann, Markus-Christian; Küppers, Franko

2013-03-01

In this paper, we demonstrate for the first time the far-field experimental results and the linewidth characteris- tics for widely tunable surface-micromachined micro-electro-mechanical system (MEMS) vertical-cavity surface- emitting lasers (VCSELs) operating at 1550 nm. The fundamental Gaussian mode emission is confirmed by optimizing the radius of curvature of top distributed Bragg reflector (DBR) membrane and by choosing an ap- propriate diameter of circular buried tunnel junctions (BTJs) so that only the fundamental Gaussian mode can sustain. For these VCSELs, a mode-hop free continuous tuning over 100 nm has already been demonstrated, which is achieved by electro-thermal tuning of the MEMS mirror. The fiber-coupled optical power of 2mW over the entire tuning range has been reported. The singlemode laser emission has more than 40 dB of side-mode suppression ratio (SMSR). The smallest linewidth achieved with these of MEMS tunable VCSELs is 98MHz which is one order of magnitude higher than that of fixed-wavelength VCSELs.

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saarinen, Mika J.; Xiang, Ning; Dumitrescu, Mihail M.; Vilokkinen, Ville; Melanen, Petri; Orsila, Seppo; Uusimaa, Petteri; Savolainen, Pekka; Pessa, Markus

2001-05-01

Visible vertical-cavity surface-emitting lasers (VCSELs) are potential light sources for polymer optical fibre (POF) data transmission systems. Minimum attenuation of light in standard PMMA-POFs occurs at about 650 nm. For POFs of a few tens of meters in length VCSELs at slightly longer wavelengths (670 - 690 nm) are also acceptable. So far, the visible VCSELs have been grown by metal organic chemical vapour deposition (MOCVD). They may also be grown by a novel variant of molecular beam epitaxy (MBE), a so-called all-solid-source MBE or SSMBE. In this paper, we describe growth of the first visible-light VCSELs by SSMBE and present the main results obtained. In particular, we have achieved lasing action at a sub-milliamp cw drive current for a VCSEL having the emission window of 8um in diameter, while a 10um device exhibited an external quantum efficiency of 6.65% in CW operation at room temperature. The lasing action up to temperature of 45°C has been demonstrated.

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

NASA Astrophysics Data System (ADS)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

GHz Modulation of GaAs-Based Bipolar Cascade VCSELs (Preprint)

DTIC Science & Technology

2006-11-01

VCSELs were grown on n+ GaAs substrates by molecular beam epitaxy . The laser cavities consist of 1-, 2-, or 3-stage 52λ microcavi- ties, each containing...AFRL-SN-WP-TP-2006-128 GHz MODULATION OF GaAs-BASED BIPOLAR CASCADE VCSELs (PREPRINT) W.J. Siskaninetz, R.G. Bedford, T.R. Nelson, Jr., J.E...TITLE AND SUBTITLE GHz MODULATION OF GaAs-BASED BIPOLAR CASCADE VCSELs (PREPRINT) 5c. PROGRAM ELEMENT NUMBER 69199F 5d. PROJECT NUMBER 2002 5e

Modal loss mechanism of micro-structured VCSELs studied using full vector FDTD method.

PubMed

Jo, Du-Ho; Vu, Ngoc Hai; Kim, Jin-Tae; Hwang, In-Kag

2011-09-12

Modal properties of vertical cavity surface-emitting lasers (VCSELs) with holey structures are studied using a finite difference time domain (FDTD) method. We investigate loss behavior with respect to the variation of structural parameters, and explain the loss mechanism of VCSELs. We also propose an effective method to estimate the modal loss based on mode profiles obtained using FDTD simulation. Our results could provide an important guideline for optimization of the microstructures of high-power single-mode VCSELs.

Vertical-cavity surface-emitting lasers: present and future

NASA Astrophysics Data System (ADS)

Morgan, Robert A.

1997-04-01

This manuscript reviews the present status of 'commercial- grade,' state-of-the-art planar, batch-fabricable, vertical- cavity surface-emitting lasers (VCSELs). Commercial-grade performance on all fronts for high-speed data communications is clearly established. In discussing the 'present,' we focus on the entrenched proton-implanted AlGaAs-based (emitting near 850 nm) technology. Renditions of this VCSEL design exist in commercial products and have enabled numerous application demonstrations. Our designs more than adequately meet producibility, performance, and robustness stipulations. Producibility milestones include greater than 99% device yield across 3-in-dia metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across greater than 100-nm range. Progress in performance includes the elimination of the excessive voltage-drop that plagued VCSELs as recently as 2 to 3 years ago. Threshold voltages as low as Vth equals 1.53 V (and routinely less than 1.6 V) are now commonplace. Submilliamp threshold currents (Ith equals 0.68 mA) have even been demonstrated with this planar structure. Moreover, continuous wave (cw) power Pcw greater than 59 mW and respectable wall-plug efficiencies ((eta) wp equals 28%) have been demonstrated. VCSEL robustness is evidenced by maximum cw lasing temperature T equals 200 degrees Celsius and temperature ranges of 10 K to 400 K and minus 55 degrees Celsius to 155 degrees Celsius on a single VCSEL. These characteristics should enable great advances in VCSEL-based technologies and beckon the notion that 'commercial-grade' VCSELs are viable in cryogenic and avionics/military environments. We also discuss what the future may hold in extensions of this platform to different wavelengths, increased integration, and advanced structures. This includes low-threshold, high- speed, single-mode VCSELs, hybrid VCSEL transceivers, and self-pulsating VCSELs.

Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

NASA Astrophysics Data System (ADS)

Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

2004-10-01

Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

Applications of Gunn lasers

NASA Astrophysics Data System (ADS)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x < 0.45) is used the active layer, making them candidates for light sources in plastic optical fibre (POF) based short-distance data communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

Ultrafast Laser Beam Switching and Pulse Train Generation by Using Coupled Vertical-Cavity, Surface-Emitting Lasers (VCSELS)

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor); Ning, Cun-Zheng (Inventor)

2005-01-01

Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.

Electrical birefringence tuning of VCSELs

NASA Astrophysics Data System (ADS)

Pusch, Tobias; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.; Michalzik, Rainer

2018-02-01

The birefringence splitting B, which is the frequency difference between the two fundamental linear polarization modes in vertical-cavity surface-emitting lasers (VCSELs), is the key parameter determining the polarization dynamics of spin-VCSELs that can be much faster than the intensity dynamics. For easy handling and control, electrical tuning of B is favored. This was realized in an integrated chip by thermally induced strain via asymmetric heating with a birefringence tuning range of 45 GHz. In this paper we present our work on VCSEL structures mounted on piezoelectric transducers for strain generation. Furthermore we show a combination of both techniques, namely VCSELs with piezo-thermal birefringence tunability.

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Ultrafast Beam Switching Using Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The strategy is demonstrated by numerical simulation, showing a beam switching of 10 deg at 42 GHz.

Widely tunable telecom MEMS-VCSEL for terahertz photomixing.

PubMed

Haidar, Mohammad Tanvir; Preu, Sascha; Paul, Sujoy; Gierl, Christian; Cesar, Julijan; Emsia, Ali; Küppers, Franko

2015-10-01

We report frequency-tunable terahertz (THz) generation with a photomixer driven by an ultra-broadband tunable micro-electro-mechanical system vertical-cavity surface-emitting laser (MEMS-VCSEL) and a fixed-wavelength VCSEL, as well as a tunable MEMS-VCSEL mixed with a distributed feedback (DFB) diode. A total frequency span of 3.4 THz is covered in direct detection mode and 3.23 THz in the homodyne mode. The tuning range is solely limited by the dynamic range of the photomixers and the Schottky diode/photoconductor used in the experiment.

Optical power of VCSELs stabilized to 35 ppm/°C without a TEC

NASA Astrophysics Data System (ADS)

Downing, John

2015-03-01

This paper reports a method and system comprising a light source, an electronic method, and a calibration procedure for stabilizing the optical power of vertical-cavity surface-emitting lasers (VCSELs) and laser diodes (LDs) without the use thermoelectric coolers (TECs). The system eliminates the needs for custom interference coatings, polarization adjustments, and the exact alignment required by the optical method reported in 2013 [1]. It can precisely compensate for the effects of temperature and wavelength drift on photodiode responsivity as well as changes in VCSEL beam quality and polarization angle over a 50°C temperature range. Data obtained from light sources built with single-mode polarization-locked VCSELs demonstrate that 30 ppm/°C stability can be readily obtained. The system has advantages over TECstabilized laser modules that include: 1) 90% lower relative RMS optical power and temperature sensitivity, 2) a five-fold enhancement of wall-plug efficiency, 3) less component testing and sorting, 4) lower manufacturing costs, and 5) automated calibration in batches at time of manufacture is practical. The system is ideally suited for battery-powered environmental and in-home medical monitoring applications.

Molecular beam epitaxy of lead salt-based vertical cavity surface emitting lasers for the 4-6 μm spectral region

NASA Astrophysics Data System (ADS)

Springholz, G.; Schwarzl, T.; Heiß, W.; Aigle, M.; Pascher, H.

2001-07-01

IV-VI semiconductor vertical cavity surface emitting quantum well lasers (VCSELs) for the 4-6 μm spectral region were grown by molecular beam epitaxy on BaF 2 (1 1 1) substrates. The VCSEL structures consist of two Bragg mirrors with an active cavity region consisting of PbTe quantum wells inserted into Pb 1- xEu xTe as barrier material. For the Bragg mirrors, two different layer structures were investigated, namely, (A) the use of nearly lattice-matched ternary Pb 1- xEu xTe layers with Eu contents alternating between 1% and 6%, and (B) the use of EuTe and Pb 1- xEu xTe ( x=6%) as bilayer combination. The latter yields a much higher refractive index contrast but features a lattice-mismatch of about 2%. VCSEL structures of each Bragg mirror type were fabricated and optically pumped laser emission was obtained at 6.07 μm for VCSELs of type A and at 4.8 μm for that of type B with a maximum operation temperature of 85 K.

Demonstration of Raman-based, dispersion-managed VCSEL technology for fibre-to-the-hut application

NASA Astrophysics Data System (ADS)

Rotich Kipnoo, E. K.; Kiboi Boiyo, D.; Isoe, G. M.; Chabata, T. V.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-03-01

For the first time, we experimentally investigate the use of vertical cavity surface emitting lasers (VCSELs) in the fibre-to-the-home (FTTH) flavour for Africa, known as fibre-to-the-hut. Fibre-to-the-hut is a VCSEL based passive optical network technology designed and optimized for African continent. VCSELs have attracted attention in optical communication due to its vast advantages; low power consumption, relatively cheap costs among others. A 4.25 Gb/s uncooled VCSEL is used in a dispersion managed, Raman assisted network achieving beyond 100 km of error free transmission suited for FTTHut scenario. Energy-efficient high performance VCSEL is modulated using a 27-1 PRBS pattern and the signal transmitted on a G.655 fibre utilizing the minimum attenuation window.

Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

PubMed

Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

2012-09-01

In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

Long-wavelength vertical-cavity laser research at Gore

NASA Astrophysics Data System (ADS)

Jayaraman, Vijaysekhar; Geske, J. C.; MacDougal, Michael H.; Peters, Frank H.; Lowes, Ted D.; Char, T. T.; Van Deusen, Dale R.; Goodnough, T.; Donhowe, Mark N.; Kilcoyne, Sean P.; Welch, David J.

1999-04-01

Vertical cavity surface emitting lasers (VCSELs) operating near 1310 or 1550 nm have been the subject of intensive research by multiple groups for several years. In the past year at Gore, we have demonstrated the first 1300 nm VCSELs which operate with useful power, high modulation rate, and low voltage over the commercial temperature range of 0 - 70 degree(s)C. These results have been achieved using a new structure in which an 850 nm VCSEL optical pump is integrated with the 1300 nm VCSEL. Electrical drive is applied to the 850 nm pump, and 1300 nm light is emitted from the integrated structure. This approach has resulted in over a milliwatt of single transverse mode power at room temperature, and several hundred microwatts of single transverse mode power at 70 degree(s)C. In addition, these devices demonstrate multi-gigabit modulation and excellent coupling efficiency to single-mode fiber.

High-wafer-yield, high-performance vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Li, Gabriel S.; Yuen, Wupen; Lim, Sui F.; Chang-Hasnain, Constance J.

1996-04-01

Vertical cavity surface emitting lasers (VCSELs) with very low threshold current and voltage of 340 (mu) A and 1.5 V is achieved. The molecular beam epitaxially grown wafers are grown with a highly accurate, low cost and versatile pre-growth calibration technique. One- hundred percent VCSEL wafer yield is obtained. Low threshold current is achieved with a native oxide confined structure with excellent current confinement. Single transverse mode with stable, predetermined polarization direction up to 18 times threshold is also achieved, due to stable index guiding provided by the structure. This is the highest value reported to data for VCSELs. We have established that p-contact annealing in these devices is crucial for low voltage operation, contrary to the general belief. Uniform doping in the mirrors also appears not to be inferior to complicated doping engineering. With these design rules, very low threshold voltage VCSELs are achieved with very simple growth and fabrication steps.

Integrated bio-fluorescence sensor.

PubMed

Thrush, Evan; Levi, Ofer; Ha, Wonill; Wang, Ke; Smith, Stephen J; Harris, James S

2003-09-26

Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

Wavelength-agile diode-laser sensing strategies for monitoring gas properties in optically harsh flows: application in cesium-seeded pulse detonation

NASA Astrophysics Data System (ADS)

Sanders, Scott Thomas; Mattison, Daniel W.; Ma, Lin; Jeffries, Jay B.; Hanson, Ronald K.

2002-06-01

The rapid, broad wavelength scanning capabilities of advanced diode lasers allow extension of traditional diode-laser absorption techniques to high pressure, transient, and generally hostile environments. Here, we demonstrate this extension by applying a vertical cavity surface-emitting laser (VCSEL) to monitor gas temperature and pressure in a pulse detonation engine (PDE). Using aggressive injection current modulation, the VCSEL is scanned through a 10 cm-1 spectral window at megahertz rates roughly 10 times the scanning range and 1000 times the scanning rate of a conventional diode laser. The VCSEL probes absorption lineshapes of the ~ 852 nm D2 transition of atomic Cs, seeded at ~ 5 ppm into the feedstock gases of a PDE. Using these lineshapes, detonated-gas temperature and pressure histories, spanning 2000 4000 K and 0.5 30 atm, respectively, are recorded with microsecond time response. The increasing availability of wavelength-agile diode lasers should support the development of similar sensors for other harsh flows, using other absorbers such as native H2O.

Progress and prospects of GaN-based VCSEL from near UV to green emission

NASA Astrophysics Data System (ADS)

Yu, Hsin-chieh; Zheng, Zhi-wei; Mei, Yang; Xu, Rong-bin; Liu, Jian-ping; Yang, Hui; Zhang, Bao-ping; Lu, Tien-chang; Kuo, Hao-chung

2018-01-01

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.

VCSEL-based optical transceiver module for high-speed short-reach interconnect

NASA Astrophysics Data System (ADS)

Yagisawa, Takatoshi; Oku, Hideki; Mori, Tatsuhiro; Tsudome, Rie; Tanaka, Kazuhiro; Daikuhara, Osamu; Komiyama, Takeshi; Ide, Satoshi

2017-02-01

Interconnects have been more important in high-performance computing systems and high-end servers beside its improvements in computing capability. Recently, active optical cables (AOCs) have started being used for this purpose instead of conventionally used copper cables. The AOC enables to extend the transmission distance of the high-speed signals dramatically by its broadband characteristics, however, it tend to increase the cost. In this paper, we report our developed quad small form-factor pluggable (QSFP) AOC utilizing cost-effective optical-module technologies. These are a unique structure using generally used flexible printed circuit (FPC) in combination with an optical waveguide that enables low-cost high-precision assembly with passive alignment, a lens-integrated ferrule that improves productivity by eliminating a polishing process for physical contact of standard PMT connector for the optical waveguide, and an overdrive technology that enables 100 Gb/s (25 Gb/s × 4-channel) operation with low-cost 14 Gb/s vertical-cavity surfaceemitting laser (VCSEL) array. The QSFP AOC demonstrated clear eye opening and error-free operation at 100 Gb/s with high yield rate even though the 14 Gb/s VCSEL was used thanks to the low-coupling loss resulting from the highprecision alignment of optical devices and the over-drive technology.

Coupled-cavity surface-emitting lasers: spectral and polarization threshold characteristics and electrooptic switching.

PubMed

Panajotov, Krassimir P; Zujewski, Mateusz; Thienpont, Hugo

2010-12-20

We study spectral and polarization threshold characteristics of coupled-cavity Vertical-Surface-Emitting Lasers (CC-VCSEL) on the base of a simple matrix approach. We show that strong wavelength discrimination can be achieved in CC-VCSELs by slightly detuning the cavities. However, polarization discrimination is not provided by the coupled-cavity design. We also consider the case of reverse-biasing one of the cavities, i.e. using it as a modulator via linear and/or quadratic electrooptic effect. Such a CC-VCSEL can act as a voltage-controlled polarization or wavelength switching device that is decoupled from the laser design and can be optimized for high modulation speed. We also show that using QD stack instead of quantum wells in the top cavity would lead to significant reduction of the driving electrical field.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELs

NASA Astrophysics Data System (ADS)

Almuneau, G.; Laaroussi, Y.; Chevallier, C.; Genty, F.; Fressengeas, N. s.; Cerutti, L.; Gauthier-Lafaye, Olivier

2015-02-01

Mid-infrared Vertical cavity surface emitting lasers (MIR-VCSEL) are very attractive compact sources for spectroscopic measurements above 2μm, relevant for molecules sensing in various application domains. A long-standing issue for long wavelength VCSEL is the large structure thickness affecting the laser properties, added for the MIR to the tricky technological implementation of the antimonide alloys system. In this paper, we propose a new geometry for MIR-VCSEL including both a lateral confinement by an oxide aperture, and a high-contrast sub-wavelength grating mirror (HCG mirror) formed by the high contrast combination AIOx/GaAs in place of GaSb/A|AsSb top Bragg reflector. In addition to drastically simplifying the vertical stack, HCG mirror allows to control through its design the beam properties. The robust design of the HCG has been ensured by an original method of optimization based on particle swarm optimization algorithm combined with an anti-optimization one, thus allowing large error tolerance for the nano-fabrication. Oxide-based electro-optical confinement has been adapted to mid-infrared lasers, byusing a metamorphic approach with (Al) GaAs layer directly epitaxially grown on the GaSb-based VCSEL bottom structure. This approach combines the advantages of the will-controlled oxidation of AlAs layer and the efficient gain media of Sb-based for mid-infrared emission. We finally present the results obtained on electrically pumped mid-IR-VCSELs structures, for which we included oxide aperturing for lateral confinement and HCG as high reflectivity output mirrors, both based on AlxOy/GaAs heterostructures.

Visible Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-01-01

circular output beams are easily coupled into optical fibers, or focused or collimated with microlenslets. The VCSELs can be tested individually at the wafer...semiconductor visible VCSEL . Also shown is the DBR reflectance and reflectivity phase , as seen from the optical cavity, and the electric field intensity ...76 xv Figure page 2.32 Calculated electric field intensity for the example IR and visible VCSELs shown in Fig. 2.31 ........................... 79

Long-wavelength VCSELs: Power-efficient answer

NASA Astrophysics Data System (ADS)

Kapon, Eli; Sirbu, Alexei

2009-01-01

The commercialization of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) is gaining new momentum as the telecoms market shifts from long-haul applications to local and access networks. These small, power-efficient devices offer several advantages over traditional edge-emitters.

1W frequency-doubled VCSEL-pumped blue laser with high pulse energy

NASA Astrophysics Data System (ADS)

Van Leeuwen, Robert; Chen, Tong; Watkins, Laurence; Xu, Guoyang; Seurin, Jean-Francois; Wang, Qing; Zhou, Delai; Ghosh, Chuni

2015-02-01

We report on a Q-switched VCSEL side-pumped 946 nm Nd:YAG laser that produces high average power blue light with high pulse energy after frequency doubling in BBO. The gain medium was water cooled and symmetrically pumped by three 1 kW 808 nm VCSEL pump modules. More than 1 W blue output was achieved at 210 Hz with 4.9 mJ pulse energy and at 340 Hz with 3.2 mJ pulse energy, with 42% and 36% second harmonic conversion efficiency respectively. Higher pulse energy was obtained at lower repetition frequencies, up to 9.3 mJ at 70 Hz with 52% conversion efficiency.

1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

NASA Astrophysics Data System (ADS)

Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

2003-04-01

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

PubMed

Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

2016-01-11

Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

Photopumped infrared vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Hadji, E.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

1996-04-01

The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K.

Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Geels, Randall Scott

The theory, design, fabrication, and testing of vertical-cavity surface-emitting lasers (VCSELs) is explored in depth. The design of the distributed Bragg reflector (DBR) mirrors is thoroughly treated and both analytic and numerical approaches for computing the reflectivity are covered. The electrical properties of the DBR mirrors are also considered and graded interfaces are found to be critical in reducing the series voltage drop in the mirrors. Thickness variations due to growth rate uncertainties are considered and the permissible thickness inaccuracies are discussed. Layer thickness variations of several percent can be tolerated without large changes in the threshold current. The growth of VCSELs by molecular beam epitaxy (MBE) is described in detail as is the device processing technology for broad area as well as small area devices. Results from numerous devices are reported. Broad area in-plane lasers were used to characterize the material and determine the internal parameters. Broad area VCSELs were fabricated to determine the characteristics of the VCSEL cavity. Small area VCSELs were fabricated and extensively tested. Measured and derived parameters from small area devices include: threshold current (~0.7 mA), peak output power (>3 mW), maximum operation temperature (>110^ circC), output power at 100^ circC (~0.4 mW), and linewidth (85 MHz). The near field, far field, and polarization characteristics were also measured.

Novel hybrid laser modes in composite VCSEL-DFB microcavities (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mischok, Andreas; Wagner, Tim; Sudzius, Markas; Brückner, Robert; Fröb, Hartmut; Lyssenko, Vadim G.; Leo, Karl

2017-02-01

Two of the most successful microcresonator concepts are the vertical cavity surface emitting laser (VCSEL), where light is confined between distributed Bragg reflectors (DBRs), and the distributed feedback (DFB) laser, where a periodic grating provides positive optical feedback to selected modes in an active waveguide (WG) layer. Our work concerns the combination of both into a composite device, facilitating coherent interaction between both regimes and giving rise to novel laser modes in the system. In a first realization, a full VCSEL stack with an organic active layer is evaporated on top of a diffraction grating with a large period (approximately 1 micron), leading to diffraction of waveguided modes into the surface emission of the device. Here, the coherent interaction between VCSEL and WG modes, as observed in an anticrossing of the dispersion lines, facilitates novel hybrid lasing modes with macroscopic in-plane coherence [1]. In further studies, we decrease the grating period of such devices to realise DFB conditions in a second-order Bragg grating which strongly couples photons via first-order light diffraction to the VCSEL. This efficient coupling can be compared to more classical cascade-coupled cavities and is successfully described by a coupled oscillator model [2]. When both resonators are non-degenerate, they are able to function as independent structures without substantial diffraction losses. The realization of such novel devices provides a promising platform for photonic circuits based on organic microlasers. [1] A. Mischok et al., Adv. Opt. Mater., early online, DOI: 10.1002/adom.201600282, (2016) [2] T. Wagner et al., Appl. Phys. Lett., accepted, in production, (2016)

Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission

DTIC Science & Technology

2000-06-23

when Nitrogen concentration is increased [91. In molecular beam epitaxy (MBE) one of the reasons of this is the surface quality degradation due to the...cavity surface emitting laser ( VCSEL ) emitting at 1.18 /tm was also reported [7 1. The main problem in the InGaAsN epitaxy is a large difference in the...vertical cavity surface emitting lasers ( VCSELs ). This stimulates attempts to fabricate high quality 1.3 /tm lasers on GaAs substrates. The best results

Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication

NASA Astrophysics Data System (ADS)

Tansu, Nelson

The thesis covers the development of novel active regions for high-performance edge-emitting lasers (EEL) and vertical cavity surface-emitting lasers (VCSELs) in optical communication. Three main themes of the thesis cover the design, fabrication, and physics of the novel and alternative active regions for GaAs-based VCSELs for the three optical communications windows at wavelength regimes of 850-nm, 1300-nm, and 1500-nm, with the emphases on the 1300-nm InGaAsN QW GaAs-based active regions and on the novel design of 1500-nm GaAs-based active regions. The studies include the utilization of compressively-strained InGaAsP quantum well (QW) active regions for the 850-nm VCSELs. The research on the long-wavelength lasers covers the design, growth, temperature analysis, carrier transport, and gain analysis of the InGaAsN (lambda = 1.3 mum) quantum well lasers. The novel and original design of the GaAsSb-(In)GaAsN type-II QWs to achieve 1500--3000 nm GaAs-based active regions is discussed in detail.

Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

NASA Astrophysics Data System (ADS)

Wang, Y. H.; Hasnain, G.; Tai, K.; Wynn, J. D.; Weir, B. E.; Choquette, K. D.; Cho, A. Y.

1991-12-01

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 Å) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two Al cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Scalable electro-photonic integration concept based on polymer waveguides

NASA Astrophysics Data System (ADS)

Bosman, E.; Van Steenberge, G.; Boersma, A.; Wiegersma, S.; Harmsma, P.; Karppinen, M.; Korhonen, T.; Offrein, B. J.; Dangel, R.; Daly, A.; Ortsiefer, M.; Justice, J.; Corbett, B.; Dorrestein, S.; Duis, J.

2016-03-01

A novel method for fabricating a single mode optical interconnection platform is presented. The method comprises the miniaturized assembly of optoelectronic single dies, the scalable fabrication of polymer single mode waveguides and the coupling to glass fiber arrays providing the I/O's. The low cost approach for the polymer waveguide fabrication is based on the nano-imprinting of a spin-coated waveguide core layer. The assembly of VCSELs and photodiodes is performed before waveguide layers are applied. By embedding these components in deep reactive ion etched pockets in the silicon substrate, the planarity of the substrate for subsequent layer processing is guaranteed and the thermal path of chip-to-substrate is minimized. Optical coupling of the embedded devices to the nano-imprinted waveguides is performed by laser ablating 45 degree trenches which act as optical mirror for 90 degree deviation of the light from VCSEL to waveguide. Laser ablation is also implemented for removing parts of the polymer stack in order to mount a custom fabricated connector containing glass fiber arrays. A demonstration device was built to show the proof of principle of the novel fabrication, packaging and optical coupling principles as described above, combined with a set of sub-demonstrators showing the functionality of the different techniques separately. The paper represents a significant part of the electro-photonic integration accomplishments in the European 7th Framework project "Firefly" and not only discusses the development of the different assembly processes described above, but the efforts on the complete integration of all process approaches into the single device demonstrator.

Electro-thermo-optical simulation of vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Smagley, Vladimir Anatolievich

Three-dimensional electro-thermal simulator based on the double-layer approximation for the active region was coupled to optical gain and optical field numerical simulators to provide a self-consistent steady-state solution of VCSEL current-voltage and current-output power characteristics. Methodology of VCSEL modeling had been established and applied to model a standard 850-nm VCSEL based on GaAs-active region and a novel intracavity-contacted 400-nm GaN-based VCSEL. Results of GaAs VCSEL simulation were in a good agreement with experiment. Correlations between current injection and radiative mode profiles have been observed. Physical sub-models of transport, optical gain and cavity optical field were developed. Carrier transport through DBRs was studied. Problem of optical fields in VCSEL cavity was treated numerically by the effective frequency method. All the sub-models were connected through spatially inhomogeneous rate equation system. It was shown that the conventional uncoupled analysis of every separate physical phenomenon would be insufficient to describe VCSEL operation.

Real-time multi-target ranging based on chaotic polarization laser radars in the drive-response VCSELs.

PubMed

Zhong, Dongzhou; Xu, Geliang; Luo, Wei; Xiao, Zhenzhen

2017-09-04

According to the principle of complete chaos synchronization and the theory of Hilbert phase transformation, we propose a novel real-time multi-target ranging scheme by using chaotic polarization laser radar in the drive-response vertical-cavity surface-emitting lasers (VCSELs). In the scheme, to ensure each polarization component (PC) of the master VCSEL (MVCSEL) to be synchronized steadily with that of the slave VCSEL, the output x-PC and y-PC from the MVCSEL in the drive system and those in the response system are modulated by the linear electro-optic effect simultaneously. Under this condition, by simulating the influences of some key parameters of the system on the synchronization quality and the relative errors of the two-target ranging, related operating parameters can be optimized. The x-PC and the y-PC, as two chaotic radar sources, are used to implement the real-time ranging for two targets. It is found that the measured distances of the two targets at arbitrary position exhibit strong real-time stability and only slight jitter. Their resolutions are up to millimeters, and their relative errors are very small and less than 2.7%.

Epitaxial approaches to long-wavelength vertical-cavity lasers

NASA Astrophysics Data System (ADS)

Hall, Eric Michael

The success of short-wavelength (850 nm) vertical-cavity surface-emitting lasers (VCSELs) as low-cost components in fiber optic networks has created a strong demand for similar low-cost devices at longer wavelengths (1.3--1.55mum), which are even more important in telecommunications systems. Extending the success of VCSELs to these longer wavelengths, however, has been slowed by the absence of a mature technology that incorporates all of the necessary components on one substrate without sacrificing the inexpensive and manufacturable nature of VCSELs. Although InAlGaAs active regions on InP substrates have been developed extensively, the other components of vertical-cavity lasers, especially epitaxially-grown distributed Bragg reflectors (DBRs), are less mature on these substrates. This thesis examines the materials and technologies that enable long-wavelength VCSELs to be grown in a single, epitaxial, lattice-matched step on InP substrates. The advantages and shortcomings of each material system are identified and the impact on devices examined. Additionally, processing technologies that rely on the properties of these materials are developed. From these studies, a InP-based, lattice-matched VCSEL design is presented that utilizes AlGaAsSb for high reflectivity DBRs, InAlGaAs for high quality active regions, InP for heat and current spreading, and a materials selective etch for electrical and optical confinement. In short, the design avoids the shortcomings of each material system while emphasizing the advantages. The resulting devices, showing low threshold currents, high efficiencies and powers, and high operating temperatures, not only validate this approach but demonstrate that such lattice-matched, InP-based devices may be a low-cost, manufacturable answer to this long-wavelength VCSEL demand.

Commercialized VCSEL components fabricated at TrueLight Corporation

NASA Astrophysics Data System (ADS)

Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Chang, C. H.; Wu, Jack; Lee, Bor-Lin; Chuang, Y. H.; Tu, S. L.; Wu, Calvin; Huang, Kai-Feng

2001-05-01

TrueLight Corporation was found in 1997 and it is the pioneer of VCSEL components supplier in Taiwan. We specialize in the production and distribution of VCSEL (Vertical Cavity Surface Emitting Laser) and other high-speed PIN-detector devices and components. Our core technology is developed to meet blooming demand of fiber optic transmission. Our intention is to diverse the device application into data communication, telecommunication and industrial markets. One mission is to provide the high performance, highly reliable and low-cost VCSEL components for data communication and sensing applications. For the past three years, TrueLight Corporation has entered successfully into the Gigabit Ethernet and the Fiber Channel data communication area. In this paper, we will focus on the fabrication of VCSEL components. We will present you the evolution of implanted and oxide-confined VCSEL process, device characterization, also performance in Gigabit data communication and the most important reliability issue

Room temperature continuous wave mid-infrared VCSEL operating at 3.35 μm

NASA Astrophysics Data System (ADS)

Jayaraman, V.; Segal, S.; Lascola, K.; Burgner, C.; Towner, F.; Cazabat, A.; Cole, G. D.; Follman, D.; Heu, P.; Deutsch, C.

2018-02-01

Tunable vertical cavity surface emitting lasers (VCSELs) offer a potentially low cost tunable optical source in the 3-5 μm range that will enable commercial spectroscopic sensing of numerous environmentally and industrially important gases including methane, ethane, nitrous oxide, and carbon monoxide. Thus far, achieving room temperature continuous wave (RTCW) VCSEL operation at wavelengths beyond 3 μm has remained an elusive goal. In this paper, we introduce a new device structure that has enabled RTCW VCSEL operation near the methane absorption lines at 3.35 μm. This device structure employs two GaAs/AlGaAs mirrors wafer-bonded to an optically pumped active region comprising compressively strained type-I InGaAsSb quantum wells grown on a GaSb substrate. This substrate is removed in processing, as is one of the GaAs mirror substrates. The VCSEL structure is optically pumped at room temperature with a CW 1550 nm laser through the GaAs substrate, while the emitted 3.3 μm light is captured out of the top of the device. Power and spectrum shape measured as a function of pump power exhibit clear threshold behavior and robust singlemode spectra.

Demonstrating ultrafast polarization dynamics in spin-VCSELs

NASA Astrophysics Data System (ADS)

Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Gerhardt, Nils C.; Hofmann, Martin R.

2018-02-01

Vertical-cavity surface-emitting lasers (VCSELs) are used for short-haul optical data transmission with increasing bit rates. The optimization involves both enhanced device designs and the use of higher-order modulation formats. In order to improve the modulation bandwidth substantially, the presented work employs spin-pumped VCSELs (spin-VCSELs) and their polarization dynamics instead of relying on intensity-modulated devices. In spin-VCSELs, the polarization state of the emitted light is controllable via spin injection. By optical spin pumping a single-mode VCSEL is forced to emit light composed of both orthogonal linearly polarized fundamental modes. The frequencies of these two modes differ slightly by a value determined by the cavity birefringence. As a result, the circular polarization degree oscillates with their beat frequency, i.e., with the birefringence-induced mode splitting. We used this phenomenon to show so-called polarization oscillations, which are generated by pulsed spin injection. Their frequency represents the polarization dynamics resonance frequency and can be tuned over a wide range via the birefringence, nearly independent from any other laser parameter. In previous work we demonstrated a maximum birefringence-induced mode splitting of more than 250 GHz. In this work, compared to previous publications, we show an almost doubled polarization oscillation frequency of more than 80 GHz. Furthermore, we discuss concepts to achieve even higher values far above 100 GHz.

Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Nazaruk, D. E.; Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Vasil'ev, A. P.; Gladyshev, A. G.; Pavlov, M. M.; Blokhin, A. A.; Kulagina, M. M.; Vashanova, K. A.; Zadiranov, Yu M.; Fefelov, A. G.; Ustinov, V. M.

2014-12-01

A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, W.W.; Choquette, K.D.; Gourley, P.L.

1998-01-27

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof are disclosed. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n {>=} 2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n {>=} 2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum. 12 figs.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, Weng W.; Choquette, Kent D.; Gourley, Paul L.

1998-01-01

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.

High-speed 850 nm VCSELs with 28 GHz modulation bandwidth for short reach communication

NASA Astrophysics Data System (ADS)

Westbergh, Petter; Safaisini, Rashid; Haglund, Erik; Gustavsson, Johan S.; Larsson, Anders; Joel, Andrew

2013-03-01

We present results from our new generation of high performance 850 nm oxide confined vertical cavity surface-emitting lasers (VCSELs). With devices optimized for high-speed operation under direct modulation, we achieve record high 3dB modulation bandwidths of 28 GHz for ~4 μm oxide aperture diameter VCSELs, and 27 GHz for devices with a ~7 μm oxide aperture diameter. Combined with a high-speed photoreceiver, the ~7 μm VCSEL enables error-free transmission at data rates up to 47 Gbit/s at room temperature, and up to 40 Gbit/s at 85°C.

Joint Services Electronics Program. Basic Research in Electronics (JSEP)

DTIC Science & Technology

1992-08-01

DBRs). Our DBR work allows us to develop improved vertical cavity surface-emitting lasers ( VCSELs ) and also to examine details of optical phenomena... in short-cavity lasers. We have used MBE regrowth techniques to provide current tunnelling into the device active region of the VCSEL . We use an AlAs... optical detector structures. We have already developed significant capability in the low temperature (2506C - 3000C) growth of undoped GaAs and AIo.3Gao

High-contrast gratings for long-wavelength laser integration on silicon

NASA Astrophysics Data System (ADS)

Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

2014-02-01

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Growth of 1.5-1.55 micron gallium indium nitrogen arsenic antimonide lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bae, Hopil

With the advent of new Internet services for exchaging not only texts and pictures but also home-made videos and high-definition movies, the appetite for more internet bandwidth is still growing at a fast pace. Satisfying these demands require extending the high-speed fiber optical networks all the way to the end users. This approach will require high-performance lasers, detectors, and modulators that are also very inexpensive and power-efficient. VCSELs are ideal light sources for this application due to their low power consumption, easier fiber coupling, ease of fabrication, and the possibility of dense 2-D integration. A new GaAs-based gain material, GaInNAsSb, can be an enabling technology for VCSELs in the 1.3-1.6mum wavelength range appropriate for optical communications. It can also enable high-power lasers for pumping Raman amplifiers, which can significantly increase the usable bandwidth of optical fibers. Growth of GaInNAsSb by molecular beam epitaxy has been very challenging, but various improvements in growth and annealing conditions lead to very low-threshold 1.55mum edge-emitting lasers and the first GaAs-based pulsed-mode 1.534mum VCSELs. Improving their temperature stability and achieving room-temperature continuous-wave(CW) VCSELs was the main objective of this thesis work. This thesis first discusses additional improvements in annealing and growth conditions, which led to a factor of 4 increase in the peak pholuminescence intensity. Edge-emitting lasers employing different numbers and structures of GaInNasSb QWs were compared, and the carrier leakage to the GaNAs barriers has been identified to be the dominant source of carrier recombination, by measurements using segmented contacts. Using the same triple QW structures and carefully designed AlGaAs/GaAs DBR mirrors, the first-ever all-epitaxial near-room-temperature CW VCSELs at 1528nm are realized on GaAs substrates.

Long-wavelength photonic integrated circuits and avalanche photodetectors

NASA Astrophysics Data System (ADS)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve InGaAs/Si APDs with much greater potential than the traditional InGaAs/InP APDs. Preliminary results on their performance will be presented.

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Nishi, Kenichi; Ogura, Ichiro; Sugou, Shigeo; Sugimoto, Yoshimasa

1996-11-01

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots.

2.49 GHz low phase-noise optoelectronic oscillator using 1.55μm VCSEL for avionics and aerospace applications

NASA Astrophysics Data System (ADS)

Hayat, Ahmad; Bacou, Alexandre; Rissons, Angelique; Mollier, Jean-Claude

2009-02-01

We present here a 1.55 μm single mode Vertical-Cavity Surface-Emitting Laser (VCSEL) based low phasenoise ring optoelectronic (OEO) oscillator operating at 2.49 GHz for aerospace, avionics and embedded systems applications. Experiments using optical fibers of different lengths have been carried out to obtain optimal results. A phase-noise measurement of -107 dBc/Hz at an offset of 10 kHz from the carrier is obtained. A 3-dB linewidth of 16 Hz for this oscillator signal has been measured. An analysis of lateral mode spacing or Free Spectral Range (FSR) as a function of fiber length has been carried out. A parametric comparison with DFB Laser-based and multimode VCSEL-based opto-electronic oscillators is also presented.

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in futuremore » optical systems.« less

Design and analysis of control system for VCSEL of atomic interference magnetometer

NASA Astrophysics Data System (ADS)

Zhang, Xiao-nan; Sun, Xiao-jie; Kou, Jun; Yang, Feng; Li, Jie; Ren, Zhang; Wei, Zong-kang

2016-11-01

Magnetic field detection is an important means of deep space environment exploration. Benefit from simple structure and low power consumption, atomic interference magnetometer become one of the most potential detector payloads. Vertical Cavity Surface Emitting Laser (VCSEL) is usually used as a light source in atomic interference magnetometer and its frequency stability directly affects the stability and sensitivity of magnetometer. In this paper, closed-loop control strategy of VCSEL was designed and analysis, the controller parameters were selected and the feedback error algorithm was optimized as well. According to the results of experiments that were performed on the hardware-in-the-loop simulation platform, the designed closed-loop control system is reasonable and it is able to effectively improve the laser frequency stability during the actual work of the magnetometer.

Temperature stable oxide-confined 850-nm VCSELs operating at bit rates up to 25 Gbit/s at 150°C

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Agustin, M.; Kropp, J.-R.; Shchukin, V. A.; Kalosha, V. P.; Chi, K. L.; Khan, Z.; Shi, J. W.; Ledentsov, N. N.

2018-02-01

New applications in industrial, automotive and datacom applications require vertical-cavity surface-emitting lasers (VCSELs) operating at very high ambient temperatures at ultrahigh speed. We discuss issues related to high temperature performance of the VCSELs including temperature response and spectral properties. The influence of the gain-to-cavity wavelength detuning on temperature performance and spectral width of the VCSELs is discussed. Performance of the oxide-confined 850 nm VCSELs with increased temperature stability capable of operating at bit rates up to 25 Gbit/s at heat sink temperature of 150°C and 35Gbit/s at 130°C. Furthermore, opposite to previous studies of VCSELs with large gain-to-cavity detuning, which demonstrated strongly increased spectral width and a strong redistribution of the mode intensities upon current increase. VCSELs demonstrated in this work show good reproducibility of a narrow spectrum in a wide range of currents and temperatures. Such performance strongly improves the transmission distance over multi-mode fiber and can reduce mode partition noise during high speed operation.

Development of a compact optical MEMS scanner with integrated VCSEL light source and diffractive optics

NASA Astrophysics Data System (ADS)

Krygowski, Thomas W.; Reyes, David; Rodgers, M. Steven; Smith, James H.; Warren, Mial E.; Sweatt, William C.; Blum-Spahn, Olga; Wendt, Joel R.; Asbill, Randolph E.

1999-09-01

In this work the design and initial fabrication results are reported for the components of a compact optical-MEMS laser scanning system. This system integrates a silicon MEMS laser scanner, a Vertical Cavity Surface Emitting Laser (VCSEL) and passive optical components. The MEMS scanner and VCSEL are mounted onto a fused silica substrate which serves as an optical interconnect between the devices. Two Diffractive Optical Elements (DOE's) are etched into the fused silica substrate to focus the VCSEL beam and increase the scan range. The silicon MEMS scanner consists of an actuator that continuously scans the position of a large polysilicon gold- coated shuttle containing a third DOE. Interferometric measurements show that the residual stress in the 50 micrometer X 1000 micrometer shuttle is extremely low, with a maximum deflection of only 0.18 micrometer over an 800 micrometer span for an unmetallized case and a deflection of 0.56 micrometer for the metallized case. A conservative estimate for the scan range is approximately plus or minus 4 degrees, with a spot size of about 0.5 mm, producing 50 resolvable spots. The basic system architecture, optical and MEMS design is reported in this paper, with an emphasis on the design and fabrication of the silicon MEMS scanner portion of the system.

Diode-Laser Absorption Sensor for Line-of-Sight Gas Temperature Distributions

NASA Astrophysics Data System (ADS)

Sanders, Scott T.; Wang, Jian; Jeffries, Jay B.; Hanson, Ronald K.

2001-08-01

Line-of-sight diode-laser absorption techniques have been extended to enable temperature measurements in nonuniform-property flows. The sensing strategy for such flows exploits the broad wavelength-scanning abilities ( >1.7 nm ~ 30 cm-1 ) of a vertical cavity surface-emitting laser (VCSEL) to interrogate multiple absorption transitions along a single line of sight. To demonstrate the strategy, a VCSEL-based sensor for oxygen gas temperature distributions was developed. A VCSEL beam was directed through paths containing atmospheric-pressure air with known (and relatively simple) temperature distributions in the 200 -700 K range. The VCSEL was scanned over ten transitions in the R branch of the oxygen A band near 760 nm and optionally over six transitions in the P branch. Temperature distribution information can be inferred from these scans because the line strength of each probed transition has a unique temperature dependence; the measurement accuracy and resolution depend on the details of this temperature dependence and on the total number of lines scanned. The performance of the sensing strategy can be optimized and predicted theoretically. Because the sensor exhibits a fast time response ( ~30 ms) and can be adapted to probe a variety of species over a range of temperatures and pressures, it shows promise for industrial application.

Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

NASA Astrophysics Data System (ADS)

Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

2015-03-01

Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

NASA Astrophysics Data System (ADS)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jason (Jyehong); Yang, Ying-Jay

2015-03-01

High-speed and "green" ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) and high-power (~7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 km×28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, >40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (<10kA/cm2) has been successfully demonstrated.

Theory of the mode stabilization mechanism in concave-micromirror-capped vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Park, Si-Hyun; Park, Yeonsang; Jeon, Heonsu

2003-08-01

We have investigated theoretically the transverse mode stabilization mechanism in oxide-confined concave-micromirror-capped vertical-cavity surface-emitting lasers (CMC-VCSELs) as reported by Park et al. [Appl. Phys. Lett. 80, 183 (2002)]. From detailed numerical calculations on a model CMC-VCSEL structure, we found that mode discrimination factors appear to be periodic in the micromirror layer thickness with a periodicity of λ/2. We also found that there are two possible concave micromirror structures for the fundamental transverse mode laser operation. These structures can be grouped according to the thickness of the concave micromirror layer: whether it is an integer or a half-integer multiple of λ/2. The optimal micromirror curvature radius differs accordingly for each case. In an optimally designed CMC-VCSEL model structure, the fundamental transverse mode can be favored as much as 4, 8, and 13 times more strongly than the first, second, and third excited modes, respectively.

Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Burger, S.; Schmidt, F.; Ledentsov, N. N.

2016-03-01

Oxide-confined apertures in vertical cavity surface emitting laser (VCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the VCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical VCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky VCSELs produced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5μm with side mode suppression ratio >20dB at the current density of 10kA/cm2; and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in- plane coupling of VCSELs, VCSELs and p-i-n photodiodes, VCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

Optical Injection Locking of a VCSEL in an OEO

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Matsko, Andrey; Savchenkov, Anatoliy; Yu, Nan; Maleki, Lute

2009-01-01

Optical injection locking has been demonstrated to be effective as a means of stabilizing the wavelength of light emitted by a vertical-cavity surface- emitting laser (VCSEL) that is an active element in the frequency-control loop of an opto-electronic oscillator (OEO) designed to implement an atomic clock based on an electromagnetically- induced-transparency resonance. This particular optical-injection- locking scheme is expected to enable the development of small, low-power, high-stability atomic clocks that would be suitable for use in applications involving precise navigation and/or communication. In one essential aspect of operation of an OEO of the type described above, a microwave modulation signal is coupled into the VCSEL. Heretofore, it has been well known that the wavelength of light emitted by a VCSEL depends on its temperature and drive current, necessitating thorough stabilization of these operational parameters. Recently, it was discovered that the wavelength also depends on the microwave power coupled into the VCSEL. Inasmuch as the microwave power circulating in the frequency-control loop is a dynamic frequency-control variable (and, hence, cannot be stabilized), there arises a need for another means of stabilizing the wavelength. The present optical-injection-locking scheme satisfies the need for a means to stabilize the wavelength against microwave- power fluctuations. It is also expected to afford stabilization against temperature and current fluctuations. In an experiment performed to demonstrate this scheme, wavelength locking was observed when about 200 W of the output power of a commercial tunable diode laser was injected into a commercial VCSEL, designed to operate in the wavelength range of 795+/-3 nm, that was generating about 200 microW of optical power. (The use of relatively high injection power levels is a usual practice in injection locking of VCSELs.)

A sensor-type application of a self-oscillating dynamic system with a fiber optic feedback line, including chemical sensors and biosensors

NASA Astrophysics Data System (ADS)

Rabinovich, Emmanuel M.

2004-05-01

We present an overview of research, conducted and published by the author and colleagues during the preceding decade, with self-oscillating dynamic systems. Special attention has been addressed to sensor type applications that allow one to design a new type of sensors of different physical parameters as well as using system for chemical and biosensors. Many detection methods exploit self-oscillating systems, such as lasers and RF or microwave oscillators, and use changes introduced into a feedback mechanism (for instance laser inter-cavity spectroscopy) for evaluation of different physical parameters such as refractive indices or absorption coefficients. Typically, that approach is very efficient, is easy to implement, and gives high sensitivity. We have demonstrated that a similar method can be used in the case of an RF optoelectronic self-oscillating system (OSOS) with a fiber-optic feedback line. Using fiber as an element of a positive feedback line allows one to design a new family of fiber-optic sensors each of which can be integrated into a fiber-optic feedback line. Changes introduced into the feedback line of an OSOS typically cause an RF frequency shift that can be measured very precisely with an RF frequency counter or spectrum analyzer. For some types of sensors an OSOS can easily incorporate and utilize advantages of well-developed modern inexpensive light sources (VCSELs, LEDs) and opto-electronic components that have been designed for communication purposes. A single closed loop OSOS can be easily duplicated for sensor array measurement via the use of parallel fiber-optics (for example VCSEL arrays and fiber ribbon cables) that have been well developed for telecommunication systems.

Demonstration of enhanced side-mode suppression in metal-filled photonic crystal vertical cavity lasers.

PubMed

Griffin, Benjamin G; Arbabi, Amir; Peun Tan, Meng; Kasten, Ansas M; Choquette, Kent D; Goddard, Lynford L

2013-06-01

Previously reported simulations have suggested that depositing thin layers of metal over the surface of a single-mode, etched air hole photonic crystal (PhC) vertical-cavity surface-emitting laser (VCSEL) could potentially improve the laser's side-mode suppression ratio by introducing additional losses to the higher-order modes. This work demonstrates the concept by presenting the results of a 30 nm thin film of Cr deposited on the surface of an implant-confined PhC VCSEL. Both experimental measurements and simulation results are in agreement showing that the single-mode operation is improved at the same injection current ratio relative to threshold.

Wideband Electrically-Pumped 1050 nm MEMS-Tunable VCSEL for Ophthalmic Imaging.

PubMed

John, Demis D; Burgner, Christopher B; Potsaid, Benjamin; Robertson, Martin E; Lee, Byung Kun; Choi, Woo Jhon; Cable, Alex E; Fujimoto, James G; Jayaraman, Vijaysekhar

2015-08-15

In this paper, we present a 1050 nm electrically-pumped micro-electro-mechanically-tunable vertical-cavity-surface-emitting-laser (MEMS-VCSEL) with a record dynamic tuning bandwidth of 63.8 nm, suitable for swept source optical coherence tomography (SS-OCT) imaging. These devices provide reduced cost & complexity relative to previously demonstrated optically pumped devices by obviating the need for a pump laser and associated hardware. We demonstrate ophthalmic SS-OCT imaging with the electrically-pumped MEMS-VCSEL at a 400 kHz axial scan rate for wide field imaging of the in vivo human retina over a 12 mm × 12 mm field and for OCT angiography of the macula over 6 mm × 6 mm & 3 mm × 3 mm fields to show retinal vasculature and capillary structure near the fovea. These results demonstrate the feasibility of electrically pumped MEMS-VCSELs in ophthalmic instrumentation, the largest clinical application of OCT. In addition, we estimate that the 3 dB coherence length in air is 225 meters ± 51 meters, far greater than required for ophthalmic SS-OCT and suggestive of other distance ranging applications.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

PubMed

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-01

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

Vertical-cavity surface-emitting lasers come of age

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.

1996-04-01

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, andmore » limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.« less

Comparison between high- and zero-contrast gratings as VCSEL mirrors

NASA Astrophysics Data System (ADS)

Liu, Anjin; Zheng, Wanhua; Bimberg, Dieter

2017-04-01

This study presents a comparison between high-contrast gratings (HCGs) and zero-contrast gratings (ZCGs) for high-speed vertical-cavity surface-emitting lasers (VCSELs). Both types of gratings exhibit high reflectivities beyond 99.5% due to the destructive interference at the output plane, but the HCG has a broader high reflectivity band. The HCG has a lower reflection delay time and smaller energy penetration length than the ZCG. The HCG has poorer mode selectivity for the VCSEL than the ZCG. The fabrication of the ZCG is less complex but with tight fabrication tolerances.

Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE-Grown InGaAs/GaAs RC LED and VCSEL Structures

DTIC Science & Technology

2002-06-03

resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers ( VCSELs )] fabricated from molecular beam epitaxy (MBE)-grown...grown 8470-631. by molecular beam epitaxy (MBE) using a Riber 32P E-mail address: muszal@ite.waw.pl (0. Muszalski). reactor. Details of the growth can be... molecular beams hit the center of a rotating sion features of RC LED and VCSEL structures, as well sample. However, due to the transversal distribution of as

Long-distance multi-channel bidirectional chaos communication based on synchronized VCSELs subject to chaotic signal injection

NASA Astrophysics Data System (ADS)

Xie, Yi-Yuan; Li, Jia-Chao; He, Chao; Zhang, Zhen-Dong; Song, Ting-Ting; Xu, Chang-Jun; Wang, Gui-Jin

2016-10-01

A novel long-distance multi-channel bidirectional chaos communication system over multiple paths based on two synchronized 1550 nm vertical-cavity surface-emitting lasers (VCSELs) is proposed and studied theoretically. These two responding VCSELs (R-VCSELs) can output similar chaotic signals served as chaotic carrier in two linear polarization (LP) modes with identical signal injection from a driving VCSEL (D-VCSEL), which is subject to optical feedback and optical injection, simultaneously. Through the numerical simulations, high quality chaos synchronization between the two R-VCSELs can be obtained. Besides, the effects of varied qualities of chaos synchronization on communication performances in 20 km single mode fiber (SMF) channels are investigated by regulating different internal parameters mismatch after adopting chaos masking (CMS) technique. With the decrease of the maximum cross correlation coefficient (Max-C) between the two R-VCSELs, the bit error rate (BER) of decoded message increase. Meanwhile, the BER can still be less than 10-9 when the Max-C degrades to 0.982. Based on high quality synchronization, when the dispersion compensating fiber (DCF) links are introduced, 4n messages of 10 Gbit/s can transmit in 180 km SMF channels over n coupling paths, bidirectionally and simultaneously. Thorough tests are carried out with detailed analysis, demonstrating long-distance, multi-channel, bidirectional chaos communication based on VCSELs with chaotic signal injection.

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Close to 100 Gbps discrete multitone transmission over 100m of multimode fiber using a single transverse mode 850nm VCSEL

NASA Astrophysics Data System (ADS)

Wu, Bo; Zhou, Xian; Ma, Yanan; Luo, Jun; Zhong, Kangping; Qiu, Shaofeng; Feng, Zhiyong; Luo, Yazhi; Agustin, Mikel; Ledentsov, Nikolay; Kropp, Joerg; Shchukin, Vitaly; Ledentsov, Nikolay N.; Eddie, Iain; Chao, Lu

2016-03-01

Discrete Multitone Transmission (DMT) transmission over standard multimode fiber (MMF) using high-speed single (SM) and multimode (MM) Vertical-Cavity Surface-Emitting Lasers (VCSELs) is studied. Transmission speed in the range of 72Gbps to 82Gbps over 300m -100m distances of OM4 fiber is realized, respectively, at Bit-Error-Ratio (BER) <5e-3 and the received optical power of only -5dBm. Such BER condition requires only 7% overhead for the conversion to error-free operation using single Bose-Chaudhuri-Hocquenghem forward error correction (BCH-FEC) coding and decoding. SM VCSEL is demonstrated to provide a much higher data transmission capacity over MMF. For 100m MMF transmission SM VCSEL allows 82Gbps as compared to MM VCSEL resulting in only 34Gbps at the same power (-5dBm). Furthermore, MM VCSEL link at 0dBm is still restricted at 100m distance by 63Gbps while SM VCSEL can exceed 100Gbps at such power levels. We believe that with further improvement in SM VCSELs and fiber coupling >100Gbps data transmission over >300m MMF distances at the BER levels matching the industry standards will become possible.

InP-based three-dimensional photonic integrated circuits

NASA Astrophysics Data System (ADS)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure. This additional beam routing flexibility allows significant size reduction and process simplification without sacrificing device performance. This innovative 3-D PIC technology platform can be easily extended to create surface-emitting lasers integrated with power monitoring detectors, micro-lenses, external modulators, amplifiers, and other passive and active components. Such added functionality can produce cost--effective solutions for the highest-end laser transmitters required for datacom and short range telecom networks, as well as fiber channels and other cost and performance sensitive applications. We present results for 1310 nm photonic IC surface-emitting laser transmitters operating at 2.5 Gbps without active thermal electric cooling.

IV-VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Shi, Z.; Xu, G.; McCann, P. J.; Fang, X. M.; Dai, N.; Felix, C. L.; Bewley, W. W.; Vurgaftman, I.; Meyer, J. R.

2000-06-01

Midinfrared broadband high-reflectivity Pb1-xSrxSe/BaF2 distributed Bragg reflectors and vertical-cavity surface-emitting lasers (VCSELs) with PbSe as the active material were grown by molecular-beam epitaxy. Because of an extremely high index contrast, mirrors with only three quarter-wave layer pairs had reflectivities exceeding 99%. For pulsed optical pumping, a lead salt VCSEL emitting at the cavity wavelength of 4.5-4.6 μm operated nearly to room temperature (289 K).

VCSEL based, wearable, continuously monitoring pulse oximeter.

PubMed

Kollmann, Daniel; Hogan, William K; Steidl, Charles; Hibbs-Brenner, Mary K; Hedin, Daniel S; Lichter, Patrick A

2013-01-01

We present the development of a novel pulse oximeter based on low power, low cost, Vertical Cavity Surface Emitting Laser (VCSEL) technology. This new design will help address a need to perform regular measurements of pulse oximetry for patients with chronic obstructive pulmonary disease. VCSELs with wavelengths suitable for pulse oximetry were developed and packaged in a PLCC package for a low cost solution that is easy to integrate into a pulse oximeter design. The VCSELs were integrated into a prototype pulse oximeter that is unobtrusive and suitable for long term wearable use. The prototype achieved good performance compared the Nonin Onyx II pulse oximeter at less than one fifth the weight in a design that can be worn behind the ear like a hearing aid.

Development of a Compact Optical-MEMS Scanner with Integrated VCSEL Light Source and Diffractive Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krygowski, Thomas W.; Reyes, David; Rodgers, M. Steven

1999-06-30

In this work the design and initial fabrication results are reported for the components of a compact optical-MEMS laser scanning system. This system integrates a silicon MEMS laser scanner, a Vertical Cavity Surface Emitting Laser (VCSEL) and passive optical components. The MEMS scanner and VCSEL are mounted onto a fused silica substrate which serves as an optical interconnect between the devices. Two Diffractive Optical Elements (DOEs) are etched into the fused silica substrate to focus the VCSEL beam and increase the scan range. The silicon MEMS scanner consists of an actuator that continuously scans the position of a large polysiliconmore » gold-coated shuttle containing a third DOE. Interferometric measurements show that the residual stress in the 500 {micro}m x 1000 {micro}m shuttle is extremely low, with a maximum deflection of only 0.18{micro}m over an 800 {micro}m span for an unmetallized case and a deflection of 0.56{micro}m for the metallized case. A conservative estimate for the scan range is {approximately}{+-}4{degree}, with a spot size of about 0.5 mm, producing 50 resolvable spots. The basic system architecture, optical and MEMS design is reported in this paper, with an emphasis on the design and fabrication of the silicon MEMS scanner portion of the system.« less

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

NASA Technical Reports Server (NTRS)

Savich, Gregory R.; Simons, Rainee N.

2006-01-01

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Monolithic subwavelength high refractive-index-contrast grating VCSELs

NASA Astrophysics Data System (ADS)

Gebski, Marcin; Dems, Maciej; Lott, James A.; Czyszanowski, Tomasz

2016-03-01

In this paper we present optical design and simulation results of vertical-cavity surface-emitting lasers (VCSELs) that incorporate monolithic subwavelength high refractive-index-contrast grating (MHCG) mirrors - a new variety of HCG mirror that is composed of high index material surrounded only on one side by low index material. We show the impact of an MHCG mirror on the performance of 980 nm VCSELs designed for high bit rate and energy-efficient optical data communications. In our design, all or part of the all-semiconductor top coupling distributed Bragg reflector mirror is replaced by an undoped gallium-arsenide MHCG. We show how the optical field intensity distribution of the VCSEL's fundamental mode is controlled by the combination of the number of residual distributed Bragg reflector (DBR) mirror periods and the physical design of the topmost gallium-arsenide MHCG. Additionally, we numerically investigate the confinement factors of our VCSELs and show that this parameter for the MHCG DBR VCSELs may only be properly determined in two or three dimensions due to the periodic nature of the grating mirror.

Simultaneous 10 Gbps data and polarization-based pulse-per-second clock transmission using a single VCSEL for high-speed optical fibre access networks

NASA Astrophysics Data System (ADS)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-01-01

Access networks based on vertical cavity surface emitting laser (VCSEL) transmitters offer alternative solution in delivering different high bandwidth, cost effective services to the customer premises. Clock and reference frequency distribution is critical for applications such as Coordinated Universal Time (UTC), GPS, banking and big data science projects. Simultaneous distribution of both data and timing signals over shared infrastructure is thus desirable. In this paper, we propose and experimentally demonstrate a novel, cost-effective technique for multi-signal modulation on a single VCSEL transmitter. Two signal types, an intensity modulated 10 Gbps data signal and a polarization-based pulse per second (PPS) clock signal are directly modulated onto a single VCSEL carrier at 1310 nm. Spectral efficiency is maximized by exploiting inherent orthogonal polarization switching of the VCSEL with changing bias in transmission of the PPS signal. A 10 Gbps VCSEL transmission with PPS over 11 km of G.652 fibre introduced a transmission penalty of 0.52 dB. The contribution of PPS to this penalty was found to be 0.08 dB.

850-nm implanted and oxide VCSELs in multigigabit data communication application

NASA Astrophysics Data System (ADS)

Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Lai, Horng-Ching; Wu, Chang-Cherng; Huang, Kai-Feng

2001-10-01

In this paper, we will present the results of the 850nm implanted and oxide-confined vertical cavity surface emitting lasers in multi-Gigabit application. In TrueLight, we have a lot of experience in manufacturing VCSEL with ion-implantation and wet-oxidation technologies for single device Gigabit data transmission application. The ion-implanted VCSEL is reliable with the Mean Time To Failure (MTTF) up to 108 hours at room temperature operation. For the gigabit Ethernet data communication, it provides a very promising solution in short haul application. In transmission experiment we demonstrated the devices could be modulated up to 2.5Gbps and 3.2Gbps data rate. For oxide-confined VCSEL devices, we use wet oxidation technology to approach the device processing and get very good result to achieve the mutli-gigabit data communication application in single device form. The VCSEL device with oxide aperture around 12um could be modulated up to 2.5Gbps and 3.2Gbps. A data of employing VCSEL in high data rate POF transmission is also presented.

A HWIL test facility of infrared imaging laser radar using direct signal injection

NASA Astrophysics Data System (ADS)

Wang, Qian; Lu, Wei; Wang, Chunhui; Wang, Qi

2005-01-01

Laser radar has been widely used these years and the hardware-in-the-loop (HWIL) testing of laser radar become important because of its low cost and high fidelity compare with On-the-Fly testing and whole digital simulation separately. Scene generation and projection two key technologies of hardware-in-the-loop testing of laser radar and is a complicated problem because the 3D images result from time delay. The scene generation process begins with the definition of the target geometry and reflectivity and range. The real-time 3D scene generation computer is a PC based hardware and the 3D target models were modeled using 3dsMAX. The scene generation software was written in C and OpenGL and is executed to extract the Z-buffer from the bit planes to main memory as range image. These pixels contain each target position x, y, z and its respective intensity and range value. Expensive optical injection technologies of scene projection such as LDP array, VCSEL array, DMD and associated scene generation is ongoing. But the optical scene projection is complicated and always unaffordable. In this paper a cheaper test facility was described that uses direct electronic injection to provide rang images for laser radar testing. The electronic delay and pulse shaping circuits inject the scenes directly into the seeker's signal processing unit.

Low power laser driver design in 28nm CMOS for on-chip and chip-to-chip optical interconnect

NASA Astrophysics Data System (ADS)

Belfiore, Guido; Szilagyi, Laszlo; Henker, Ronny; Ellinger, Frank

2015-09-01

This paper discusses the challenges and the trade-offs in the design of laser drivers for very-short distance optical communications. A prototype integrated circuit is designed and fabricated in 28 nm super-low-power CMOS technology. The power consumption of the transmitter is 17.2 mW excluding the VCSEL that in our test has a DC power consumption of 10 mW. The active area of the driver is only 0.0045 mm2. The driver can achieve an error-free (BER < 10 -12) electrical data-rate of 25 Gbit/s using a pseudo random bit sequence of 27 -1. When the driver is connected to the VCSEL module an open optical eye is reported at 15 Gbit/s. In the tested bias point the VCSEL module has a measured bandwidth of 10.7 GHz.

Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

NASA Astrophysics Data System (ADS)

Choi, Woo June; Wang, Ruikang K.

2015-10-01

We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

10 m/25 Gbps LiFi transmission system based on a two-stage injection-locked 680 nm VCSEL transmitter.

PubMed

Lu, Hai-Han; Li, Chung-Yi; Chu, Chien-An; Lu, Ting-Chien; Chen, Bo-Rui; Wu, Chang-Jen; Lin, Dai-Hua

2015-10-01

A 10  m/25  Gbps light-based WiFi (LiFi) transmission system based on a two-stage injection-locked 680 nm vertical-cavity surface-emitting laser (VCSEL) transmitter is proposed. A LiFi transmission system with a data rate of 25 Gbps is experimentally demonstrated over a 10 m free-space link. To the best of our knowledge, it is the first time a two-stage injection-locked 680 nm VCSEL transmitter in a 10  m/25  Gbps LiFi transmission system has been employed. Impressive bit error rate performance and a clear eye diagram are achieved in the proposed systems. Such a 10  m/25  Gbps LiFi transmission system provides the advantage of a communication link for higher data rates that could accelerate the deployment of visible laser light communication.

Lasing from active optomechanical resonators

PubMed Central

Czerniuk, T.; Brüggemann, C.; Tepper, J.; Brodbeck, S.; Schneider, C.; Kamp, M.; Höfling, S.; Glavin, B. A.; Yakovlev, D. R.; Akimov, A. V.; Bayer, M.

2014-01-01

Planar microcavities with distributed Bragg reflectors (DBRs) host, besides confined optical modes, also mechanical resonances due to stop bands in the phonon dispersion relation of the DBRs. These resonances have frequencies in the 10- to 100-GHz range, depending on the resonator’s optical wavelength, with quality factors exceeding 1,000. The interaction of photons and phonons in such optomechanical systems can be drastically enhanced, opening a new route towards the manipulation of light. Here we implemented active semiconducting layers into the microcavity to obtain a vertical-cavity surface-emitting laser (VCSEL). Thereby, three resonant excitations—photons, phonons and electrons—can interact strongly with each other providing modulation of the VCSEL laser emission: a picosecond strain pulse injected into the VCSEL excites long-living mechanical resonances therein. As a result, modulation of the lasing intensity at frequencies up to 40 GHz is observed. From these findings, prospective applications of active optomechanical resonators integrated into nanophotonic circuits may emerge. PMID:25008784

Theory and Simulation of Self- and Mutual-Diffusion of Carrier Density and Temperature in Semiconductor Lasers

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.

2001-01-01

Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

Phase noise analysis of a 10-GHz optical injection-locked vertical-cavity surface-emitting laser-based optoelectronic oscillator

NASA Astrophysics Data System (ADS)

Coronel, Juan; Varón, Margarita; Rissons, Angélique

2016-09-01

The optical injection locking (OIL) technique is proposed to reduce the phase noise of a carrier generated for a vertical-cavity surface-emitting laser (VCSEL)-based optoelectronic oscillator. The OIL technique permits the enhancement of the VCSEL direct modulation bandwidth as well as the stabilization of the optical noise of the laser. A 2-km delay line, 10-GHz optical injection-locked VCSEL-based optoelectronic oscillator (OILVBO) was implemented. The internal noise sources of the optoelectronic oscillator components were characterized and analyzed to understand the noise conversion of the system into phase noise in the oscillator carrier. The implemented OILVBO phase noise was -105.7 dBc/Hz at 10 kHz from the carrier; this value agrees well with the performed simulated analysis. From the computed and measured phase noise curves, it is possible to infer the noise processes that take place inside the OILVBO. As a second measurement of the oscillation quality, a time-domain analysis was done through the Allan's standard deviation measurement, reported for first time for an optoelectronic oscillator using the OIL technique.

>100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP

NASA Astrophysics Data System (ADS)

Wang, C. S.; Koda, R.; Huntington, A. S.; Gossard, A. C.; Coldren, L. A.

2005-04-01

High-quality InAlGaAs digital-alloy active regions using submonolayer superlattices were developed and employed in a 3-stage bipolar cascade multiple-active-region vertical cavity surface emitting laser (VCSEL) design. The photoluminescence intensity and linewidth of these active regions were optimized by varying the substrate temperature and digitization period. These active regions exhibit considerable improvement over previously developed digital-alloy active regions and are comparable to analog-alloy active regions. Multiple-active-region VCSELs, grown all-epitaxially by MBE on InP, demonstrate greater than 100% output differential efficiency at 1.55-μm emission. A record high 104% output differential efficiency was achieved for a 3-stage long-wavelength VCSEL.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-15

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θ{sub p}. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θ{sub p}. The maximum value of the cross-correlation coefficient achievedmore » is −0.99 with a zero time delay over a wide range of θ{sub p} beyond 65° with a poor synchronization dynamic at θ{sub p} less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θ{sub p}. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.« less

Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Forman, Charles A.; Lee, SeungGeun; Young, Erin C.; Kearns, Jared A.; Cohen, Daniel A.; Leonard, John T.; Margalith, Tal; DenBaars, Steven P.; Nakamura, Shuji

2018-03-01

We have achieved continuous-wave (CW) operation of an optically polarized m-plane GaN-based vertical-cavity surface-emitting laser (VCSEL) with an ion implanted current aperture, a tunnel junction intracavity contact, and a dual dielectric distributed Bragg reflector design. The reported VCSEL has 2 quantum wells, with a 14 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 23 λ total cavity thickness. The thermal performance was improved by increasing the cavity length and using Au-In solid-liquid interdiffusion bonding, which led to lasing under CW operation for over 20 min. Lasing wavelengths under pulsed operation were observed at 406 nm, 412 nm, and 419 nm. Only the latter two modes appeared under CW operation due to the redshifted gain at higher temperatures. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 140 μW and 700 μW, respectively. The fundamental transverse mode was observed without the presence of filamentary lasing. The thermal impedance was estimated to be ˜1400 °C/W for a 6 μm aperture 23 λ VCSEL.

Semiconductor light sources for near- and mid-infrared spectral ranges

NASA Astrophysics Data System (ADS)

Karachinsky, L. Ya; Babichev, A. V.; Gladyshev, A. G.; Denisov, D. V.; Filimonov, A. V.; Novikov, I. I.; Egorov, A. Yu

2017-11-01

1550 nm band wafer-fused vertical-cavity surface-emitting lasers (VCSELs) and 5-10 μm band multi-stages quantum-cascade lasers (QCL) grown by molecular beam epitaxy (MBE) were fabricated and studied. VCSELs show high output optical power up to 6 mW in single-mode regime (SMSR > 40 dB) and open-eye diagrams at 30 Gbps of standard NRZ at 20°C. QCL heterostructures show high structural quality (fluctuations of composition and thickness < 1%). 20-μm-stripe width QCLs mounted on copper heatsinks show lasing at ∼ 6, 7.5 and 9 μm.

Molecular beam epitaxy growth method for vertical-cavity surface-emitting laser resonators based on substrate thermal emission

NASA Astrophysics Data System (ADS)

Talghader, J. J.; Hadley, M. A.; Smith, J. S.

1995-12-01

A molecular beam epitaxy growth monitoring method is developed for distributed Bragg reflectors and vertical-cavity surface-emitting laser (VCSEL) resonators. The wavelength of the substrate thermal emission that corresponds to the optical cavity resonant wavelength is selected by a monochromator and monitored during growth. This method allows VCSEL cavities of arbitrary design wavelength to be grown with a single control program. This letter also presents a theoretical model for the technique which is based on transmission matrices and simple thermal emission properties. Demonstrated reproducibility of the method is well within 0.1%.

Polarization and dynamical properties of VCSELs-based photonic neuron subject to optical pulse injection

NASA Astrophysics Data System (ADS)

Xiang, Shuiying; Wen, Aijun; Zhang, Hao; Li, Jiafu; Guo, Xingxing; Shang, Lei; Lin, Lin

2016-11-01

The polarization-resolved nonlinear dynamics of vertical-cavity surface-emitting lasers (VCSELs) subject to orthogonally polarized optical pulse injection are investigated numerically based on the spin flip model. By extensive numerical bifurcation analysis, the responses dynamics of photonic neuron based on VCSELs under the arrival of external stimuli of orthogonally polarized optical pulse injection are mainly discussed. It is found that, several neuron-like dynamics, such as phasic spiking of a single abrupt large amplitude pulse followed with or without subthreshold oscillation, and tonic spiking with multiple periodic pulses, are successfully reproduced in the numerical model of VCSELs. Besides, the effects of stimuli strength, pump current, frequency detuning, as well as the linewidth enhancement factor on the neuron-like response dynamics are examined carefully. The operating parameters ranges corresponding to different neuron-like dynamics are further identified. Thus, the numerical model and simulation results are very useful and interesting for the ultrafast brain-inspired neuromorphic photonics systems based on VCSELs.

Fabrication and performance of tuneable single-mode VCSELs emitting in the 750- to 1000-nm range

NASA Astrophysics Data System (ADS)

Grabherr, Martin; Wiedenmann, Dieter; Jaeger, Roland; King, Roger

2005-03-01

The growing demand on low cost high spectral purity laser sources at specific wavelengths for applications like tuneable diode laser absorption spectroscopy (TDLAS) and optical pumping of atomic clocks can be met by sophisticated single-mode VCSELs in the 760 to 980 nm wavelength range. Equipped with micro thermo electrical cooler (TEC) and thermistor inside a small standard TO46 package, the resulting wavelength tuning range is larger than +/- 2.5 nm. U-L-M photonics presents manufacturing aspects, device performance and reliability data on tuneable single-mode VCSELs at 760, 780, 794, 852, and 948 nm lately introduced to the market. According applications are O2 sensing, Rb pumping, Cs pumping, and moisture sensing, respectively. The first part of the paper dealing with manufacturing aspects focuses on control of resonance wavelength during epitaxial growth and process control during selective oxidation for current confinement. Acceptable resonance wavelength tolerance is as small as +/- 1nm and typical aperture size of oxide confined single-mode VCSELs is 3 &mum with only few hundred nm tolerance. Both of these major production steps significantly contribute to yield on wafer values. Key performance data for the presented single-mode VCSELs are: >0.5 mW of optical output power, >30 dB side mode suppression ratio, and extrapolated 10E7 h MTTF at room temperature based on several millions of real test hours. Finally, appropriate fiber coupling solutions will be presented and discussed.

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

NASA Astrophysics Data System (ADS)

Grenouillet, L.; Duvaut, P.; Olivier, N.; Gilet, P.; Grosse, P.; Poncet, S.; Philippe, P.; Pougeoise, E.; Fulbert, L.; Chelnokov, A.

2006-07-01

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

Integrated MEMS-tunable VCSELs for reconfigurable optical interconnects

NASA Astrophysics Data System (ADS)

Kögel, Benjamin; Debernardi, Pierluigi; Westbergh, Petter; Gustavsson, Johan S.; Haglund, Åsa; Haglund, Erik; Bengtsson, Jörgen; Larsson, Anders

2012-03-01

A simple and low-cost technology for tunable vertical-cavity surface-emitting lasers (VCSELs) with curved movable micromirror is presented. The micro-electro-mechanical system (MEMS) is integrated with the active optical component (so-called half-VCSEL) by means of surface-micromachining using a reflown photoresist droplet as sacrificial layer. The technology is demonstrated for electrically pumped, short-wavelength (850 nm) tunable VCSELs. Fabricated devices with 10 μm oxide aperture are singlemode with sidemode suppression >35 dB, tunable over 24 nm with output power up to 0.5mW, and have a beam divergence angle <6 °. An improved high-speed design with reduced parasitic capacitance enables direct modulation with 3dB-bandwidths up to 6GHz and error-free data transmission at 5Gbit/s. The modulation response of the MEMS under electrothermal actuation has a bandwidth of 400 Hz corresponding to switching times of about 10ms. The thermal crosstalk between MEMS and half-VCSEL is negligible and not degrading the device performance. With these characteristics the integrated MEMS-tunable VCSELs are basically suitable for use in reconfigurable optical interconnects and ready for test in a prototype system. Schemes for improving output power, tuning speed, and modulation bandwidth are briefly discussed.

A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures

NASA Astrophysics Data System (ADS)

Mei, Yang; Xu, Rong-Bin; Xu, Huan; Ying, Lei-Ying; Zheng, Zhi-Wei; Zhang, Bao-Ping; Li, Mo; Zhang, Jian

2018-01-01

Thermal characteristics of GaN-based vertical cavity surface emitting lasers (VCSELs) with three typical structures were investigated both theoretically and experimentally. The simulation results based on a steady state quasi three-dimensional cylindrical model show that the thermal resistance (R th) is affected by cavity length, mesa size, as well as the bottom distributed Bragg reflector (DBR) size, and the detail further depends on different structures. Among different devices, GaN VCSEL with a hybrid cavity formed by one nitride bottom DBR and another dielectric top DBR is featured with lower R th, which is meanwhile affected strongly by the materials of the epitaxial bottom DBR. The main issues affecting the thermal dissipation in VCSELs with double dielectric DBRs are the bottom dielectric DBR and the dielectric current-confinement layer. To validate the simulation results, GaN-based VCSEL bonded on a copper plate was fabricated. R th of this device was measured and the results agreed well with the simulation. This work provides a better understanding of the thermal characteristics of GaN-based VCSELs and is useful in optimizing the structure design and improving the device performance.

Microgroove fabrication with excimer laser ablation techniques for optical fiber array alignment purposes

NASA Astrophysics Data System (ADS)

Naessens, Kris; Van Hove, An; Coosemans, Thierry; Verstuyft, Steven; Vanwassenhove, Luc; Van Daele, Peter; Baets, Roel G.

2000-11-01

Currently, an ever increasing need for bandwidth, compactness and efficiency characterizes the world of interconnect and data communication. This tendency has already led to serial links being gradually replaced by parallel optical interconnect solutions. However, as the maximum capacity for the latter will be reached in the near future, new approaches are required to meet demand. One possible option is to switch to 2D parallel implementations of fiber arrays. In this paper we present the fabrication of a 2D connector for coupling a 4x8 array of plastic optical fibers to RCLED or VCSEL arrays. The connector consists primarily of dedicated PMMA plates in which arrays of 8 precisely dimensioned grooves at a pitch of 250 micrometers are introduced. The trenches are each 127 micrometers deep and their width is optimized to allow fixation of plastic optical fibers. We used excimer laser ablation for prototype fabrication of these alignment microstructures. In a later stage, the plates can be replicated using standard molding techniques. The laser ablation technique is extremely well suited for rapid prototyping and proves to be a versatile process yielding high accuracy dimensioning and repeatability of features in a wide diversity of materials. The dependency of the performance in terms of quality of the trenches (bottom roughness) and wall angle on various parameters (wavelength, energy density, pulse frequency and substrate material) is discussed. The fabricated polymer sheets with grooves are used to hold optical fibers by means of a UV-curable adhesive. In a final phase, the plates are stacked and glued in order to realize the 2D-connector of plastic optical fibers for short distance optical interconnects.

Novel electro-optical coupling technique for magnetic resonance-compatible positron emission tomography detectors.

PubMed

Olcott, Peter D; Peng, Hao; Levin, Craig S

2009-01-01

A new magnetic resonance imaging (MRI)-compatible positron emission tomography (PET) detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL) diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

Polarization mode control of long-wavelength VCSELs by intracavity patterning

DOE PAGES

Long, Christopher Michael; Mickovic, Zlatko; Dwir, Benjamin; ...

2016-04-26

Polarization mode control is enhanced in wafer-fused vertical-cavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces birefringence and dichroism, which discriminates between the two polarization states of the fundamental transverse modes. We find that the cavity modifications define the polarization angle at threshold with respect to the crystal axes, and increase the gain anisotropy and birefringence on average, leading to an increase in the polarization switching current. As a result, experimental measurements are explained using the spin-flip model of VCSEL polarization dynamics.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

NASA Astrophysics Data System (ADS)

Lai, Fang-I.; Chang, Ya-Hsien; Laih, Li-Hong; Kuo, Hao-chung; Wang, S. C.

2004-06-01

Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ~3 mA, and the slope efficiencies ~ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

Polarization-resolved time-delay signatures of chaos induced by FBG-feedback in VCSEL.

PubMed

Zhong, Zhu-Qiang; Li, Song-Sui; Chan, Sze-Chun; Xia, Guang-Qiong; Wu, Zheng-Mao

2015-06-15

Polarization-resolved chaotic emission intensities from a vertical-cavity surface-emitting laser (VCSEL) subject to feedback from a fiber Bragg grating (FBG) are numerically investigated. Time-delay (TD) signatures of the feedback are examined through various means including self-correlations of intensity time-series of individual polarizations, cross-correlation of intensities time-series between both polarizations, and permutation entropies calculated for the individual polarizations. The results show that the TD signatures can be clearly suppressed by selecting suitable operation parameters such as the feedback strength, FBG bandwidth, and Bragg frequency. Also, in the operational parameter space, numerical maps of TD signatures and effective bandwidths are obtained, which show regions of chaotic signals with both wide bandwidths and weak TD signatures. Finally, by comparing with a VCSEL subject to feedback from a mirror, the VCSEL subject to feedback from the FBG generally shows better concealment of the TD signatures with similar, or even wider, bandwidths.

VCSELs for optical communication at Fuji Xerox

NASA Astrophysics Data System (ADS)

Kondo, Takashi; Hayakawa, Junichiro; Jogan, Naoki; Murakami, Akemi; Sakurai, Jun; Gu, Xiaodong; Koyama, Fumio

2017-02-01

We introduce the characteristics of vertical-cavity surface-emitting lasers (VCSELs) for use in optical communications. In the field of optical interconnections and networks, 850 nm VCSELs are key optical transmitters due to their high-speed modulation and low power consumption. One promising candidate for achieving high-speed modulations exceeding 50 Gbps is the transverse-coupled-cavity (TCC) VCSEL. In this talk, we demonstrate the characteristics of 850 nm transverse-coupled-cavity VCSELs, which helped us achieve a high 3dB modulation bandwidth (30 GHz) at 0 °C and realize eye-opening at the large-signal modulation rate of 48 Gbps. The VCSEL's epilayer structure was grown by MOCVD. The active region consists of three strained InGaAs QWs surrounded by AlGaAs barriers. The n-type and p-type DBRs are composed of AlGaAs/AlGaAs, respectively. A line-shaped H+ ion was implanted at the center of the bowtie-shaped post, dividing it into two cavities. The threshold current of the TCC VCSEL with an oxide aperture of 3.6 μm is 0.33 mA. Only the left-side cavity is pumped, while the right cavity is unpumped. The effect of modulation bandwidth enhancement was observed over a wide temperature range of 120K thanks to an optical feedback in the coupled cavities. These results show the possibility of achieving high-speed VCSELs without any temperature or bias control. We also demonstrate an ultra-compact photodetector-integrated VCSEL with two laterally-coupled cavities. An output power and a photocurrent exhibit similar tendencies under a wide range of temperature changes. This device could be also used for monitoring output power without a conventional photodetector mounted separately.

Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

NASA Astrophysics Data System (ADS)

Mokhtari, Merwan; Pagnod-Rossiaux, Philippe; Laruelle, Francois; Landesman, Jean-Pierre; Moreac, Alain; Levallois, Christophe; Cassidy, Daniel T.

2018-03-01

In-plane micro-photoluminescence (μ-PL) and micro-reflectivity measurements have been performed at room temperature by optical excitation perpendicular to the surface of two different structures: a complete vertical surface-emitting laser (VCSEL) structure and a VCSEL without the upper p-type distributed Bragg reflector (P-DBR). The two structures were both laterally oxidized and measurements were made on the top of oxidized and unoxidized regions. We show that, since the photoluminescence (PL) spectra consist of the cumulative effect of InGaAs/AlGaAs multi-quantum wells (MQWs) luminescence and interferences in the DBR, the presence or not of the P-DBR and oxide layers can significantly modify the spectrum. μ-PL mapping performed on full VCSEL structures clearly shows oxidized and unoxidized regions that are not resolved with visible light optical microscopy. Finally, preliminary measurements of the degree of polarization (DOP) of the PL have been made on a complete VCSEL structure before and after an oxidation process. We obtain an image of DOP measured by polarization-resolved μ-PL. These measurements allow us to evaluate the main components of strain.

Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

NASA Astrophysics Data System (ADS)

Parekh, Devang

With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance frequency enhancement was exploited for millimeter-wave radio over fiber communications. Experimental demonstration of 4 Gb/s data transmission over 20 km of fiber and 3 m of wireless transmission at a 60 GHz carrier frequency was achieved. Additionally, optical injection of multi-transverse mode (MM) VCSELs was investigated showing record resonance frequency enhancement of > 54 GHz and 3-dB bandwidth of 38 GHz. Besides these applications, a number of other intriguing applications are also discussed, including an optoelectronic oscillator (OEO) and wavelength-division multiplexed passive optical networks (WDM-PON). Finally, the future of optical injection locking and its direction going forward will be discussed.

Hybrid integration of VCSELs onto a silicon photonic platform for biosensing application

NASA Astrophysics Data System (ADS)

Lu, Huihui; Lee, Jun Su; Zhao, Yan; Cardile, Paolo; Daly, Aidan; Carroll, Lee; O'Brien, Peter

2017-02-01

This paper presents a technology of hybrid integration vertical cavity surface emitting lasers (VCSELs) directly on silicon photonics chip. By controlling the reflow of the solder balls used for electrical and mechanical bonding, the VCSELs were bonded at 10 degree to achieve the optimum angle-of-incidence to the planar grating coupler through vision based flip-chip techniques. The 1 dB discrepancy between optical loss values of flip-chip passive assembly and active alignment confirmed that the general purpose of the flip-chip design concept is achieved. This hybrid approach of integrating a miniaturized light source on chip opens the possibly of highly compact sensor system, which enable future portable and wearable diagnostics devices.

DBR, Sub-wavelength grating, and Photonic crystal slab Fabry-Perot cavity design using phase analysis by FDTD.

PubMed

Kim, Jae Hwan Eric; Chrostowski, Lukas; Bisaillon, Eric; Plant, David V

2007-08-06

We demonstrate a Finite-Difference Time-Domain (FDTD) phase methodology to estimate resonant wavelengths in Fabry-Perot (FP) cavity structures. We validate the phase method in a conventional Vertical-Cavity Surface-Emitting Laser (VCSEL) structure using a transfer-matrix method, and compare results with a FDTD reflectance method. We extend this approach to a Sub-Wavelength Grating (SWG) and a Photonic Crystal (Phc) slab, either of which may replace one of the Distributed Bragg Reflectors (DBRs) in the VCSEL, and predict resonant conditions with varying lithographic parameters. Finally, we compare the resonant tunabilities of three different VCSEL structures, taking quality factors into account.

Oxygen measurements at high pressures with vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Wang, J.; Sanders, S. T.; Jeffries, J. B.; Hanson, R. K.

Measurements of oxygen concentration at high pressures (to 10.9 bar) were made using diode-laser absorption of oxygen A-band transitions near 760 nm. The wide current-tuning frequency range (>30 cm-1) of vertical cavity surface-emitting lasers (VCSELs) was exploited to enable the first scanned-wavelength demonstration of diode-laser absorption at high pressures; this strategy is more robust than fixed-wavelength strategies, particularly in hostile environments. The wide tuning range and rapid frequency response of the current tuning were further exploited to demonstrate wavelength-modulation absorption spectroscopy in a high-pressure environment. The minimum detectable absorbance demonstrated, 1×10-4, corresponds to 800 ppm-m oxygen detectivity at room temperature and is limited by etalon noise. The rapid- and wide-frequency tunability of VCSELs should significantly expand the application domain of absorption-based sensors limited in the past by the small current-tuning frequency range (typically <2 cm-1) of conventional edge-emitting diode lasers.

Reconfigurable high-speed optical fibre networks: Optical wavelength conversion and switching using VCSELs to eliminate channel collisions

NASA Astrophysics Data System (ADS)

Boiyo, Duncan Kiboi; Chabata, T. V.; Kipnoo, E. K. Rotich; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-01-01

We experimentally provide an alternative solution to channel collisions through up-wavelength conversion and switching by using vertical cavity surface-emitting lasers (VCSELs). This has been achieved by utilizing purely optical wavelength conversion on VCSELs at the low attenuation, 1550 nm transmission window. The corresponding transmission and bit error-rate (BER) performance evaluation is also presented. In this paper, two 1550 nm VCSELs with 50-150 GHz channel spacing are modulated with a 10 Gb/s NRZ PRBS 27-1 data and their interferences investigated. A channel interference penalty range of 0.15-1.63 dB is incurred for 150-50 GHz channel spacing without transmission. To avoid channel collisions and to minimize high interference penalties, the transmitting VCSEL with data is injected into the side-mode of a slave VCSEL to obtain a new up converted wavelength. A 16 dB extinction ratio of the incoming wavelength is achieved when a 15 dBm transmitting beam is injected into the side-mode of a -4.5 dBm slave VCSEL. At 8.5 Gb/s, a 1.1 dB conversion and a 0.5 dB transmission penalties are realized when the converted wavelength is transmitted over a 24.7 km G.655 fibre. This work offers a low-cost, effective wavelength conversion and channel switching to reduce channel collision probability by reconfiguring channels at the node of networks.

Thermally stable surface-emitting tilted wave laser

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Kalosha, V. P.; Ledentsov, N.; Agustin, M.; Kropp, J. R.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu; Kulagina, M. M.; Zhukov, A. E.

2018-02-01

Novel lasing modes in a vertical-cavity surface-emitting laser (VCSEL)-type structure based on an antiwaveguding cavity are studied. Such a VCSEL cavity has an effective refractive index in the cavity region lower than the average index of the distributed Bragg reflectors (DBRs). Such device in a stripe geometry does not support in-plane waveguiding mode, and all modes with a high Q-factor are exclusively VCSEL-like modes with similar near field profile in the vertical direction. A GaAlAs-based VCSEL structure studied contains a resonant cavity with multiple GaInAs quantum wells as an active region. The VCSEL structure is processed as an edge-emitting laser with cleaved facets and top contact representing a non-alloyed metal grid. Rectangular-shaped 400x400 µm pieces are cleaved with perpendicular facets. The contact grid region has a total width of 70 μm. 7 μm-wide metal stripes serve as non-alloyed metal contact and form periodic rectangular openings having a size of 10x40 μm. Surface emission through the windows on top of the chip is measured at temperatures from 90 to 380 K. Three different types of modes are observed. The longest wavelength mode (mode A) is a VCSEL-like mode at 854 nm emitting normal to the surface with a full width at half maximum (FWHM) of the far field 10°. Accordingly the lasing wavelength demonstrates a thermal shift of the wavelength of 0.06 nm/K. Mode B is at shorter wavelengths of 840 nm at room temperature, emitting light at two symmetric lobes at tilt angles 40° with respect to the normal to the surface in the directions parallel to the stripe. The emission wavelength of this mode shifts at a rate 0.22 nm/K according to the GaAs bandgap shift. The angle of mode B with respect to the normal reduces as the wavelength approaches the vertical cavity etalon wavelength and this mode finally merges with the VCSEL mode. Mode B hops between different lateral modes of the VCSEL forming a dense spectrum due to significant longitudinal cavity length, and the thermal shift of its wavelength is governed by the shift of the gain spectrum. The most interesting observation is Mode C, which shifts at a rate 0.06 nm/K and has a spectral width of 1 nm. Mode C matches the wavelength of the critical angle for total internal reflection for light impinging from semiconductor chip on semiconductor/air interface and propagates essentially as an in-plane mode. According to modeling data we conclude that the lasing mode represents a coupled state between the TM-polarized surface-trapped optical mode and the VCSEL cavity mode. The resulting mode has an extended near field zone and low propagation losses. The intensity of the mode drastically enhances once is appears at resonance with Mode B. A clear threshold is revealed in the L-I curves of all modes and there is a strong competition of the lasing mechanisms once the gain maximum is scanned over the related wavelength range by temperature change.

Simulation of Optical Resonators for Vertical-Cavity Surface-Emitting Lasers (vcsel)

NASA Astrophysics Data System (ADS)

Mansour, Mohy S.; Hassen, Mahmoud F. M.; El-Nozahey, Adel M.; Hafez, Alaa S.; Metry, Samer F.

2010-04-01

Simulation and modeling of the reflectivity and transmissivity of the multilayer DBR of VCSEL, as well as inside the active region quantum well are analyzed using the characteristic matrix method. The electric field intensity distributions inside such vertical-cavity structure are calculated. A software program under MATLAB environment is constructed for the simulation. This study was performed for two specific Bragg wavelengths 980 nm and 370 nm for achieving a resonant periodic gain (RPG)

Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

NASA Astrophysics Data System (ADS)

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

2018-03-01

We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

Investigations of Optical Properties of Active Regions in Vertical Cavity Surface Emitting Lasers Grown by MBE

DTIC Science & Technology

2002-06-03

Molecular beam epitaxy ; Planar microcavities; Vertical cavity surface emitting lasers 1... Vertical Cavity Surface Emitting Lasers Grown by MBE DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the...S-581 83 Linkiping, Sweden Abstract The design of the vertical cavity surface emitting lasers ( VCSELs ) needs proper tuning of many

Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

NASA Astrophysics Data System (ADS)

Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

2018-03-01

We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

NASA Astrophysics Data System (ADS)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

2008-04-01

As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

NASA Astrophysics Data System (ADS)

Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

2018-02-01

We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

/III-V semiconductor broadband distributed Bragg reflectors for long-wavelength VCSEL and SESAM devices

NASA Astrophysics Data System (ADS)

Koeninger, Anna; Boehm, Gerhard; Meyer, Ralf; Amann, Markus-Christian

2014-12-01

Semiconductor devices such as vertical-cavity surface-emitting lasers (VCSELs) or semiconductor-saturable absorber mirrors (SESAMs) require high-reflection mirrors. Moreover, in VCSELs, it is beneficial to have a crystalline mirror, which is as thin as possible in order to ensure a high thermal conductivity for efficient heat-sinking of the laser. On the other hand, the wavelength tuning range of a SESAM is limited by the reflection bandwidth of its distributed Bragg reflector (DBR). Thus, broadband mirrors are preferable here. This paper reports a three-pair DBR grown by molecular beam epitaxy (MBE) using BaCaF2 and GaAs on a GaAs (100) substrate. Due to the high ratio in refractive indices of GaAs and the group-IIa-fluorides, high-reflectivity mirrors and wide bandwidths can be obtained with low total thicknesses. We also investigated growth and stability of the material BaCaF2, as well as its thermal conductivity both as single layer and Bragg reflector. Observed peeling of the layers could be avoided by implementing a fluorine treatment previous to the BaCaF2 growth.

MBE growth of highly reproducible VCSELs

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.

1997-05-01

Advances in the design of heterojunction devices have placed stringent demands on the epitaxial material technologies required to fabricate these structures. The increased demand for more stringent tolerance and complex device structures have resulted in a situation where acceptable growth yields will be realized only if epitaxial growth is directly monitored and controlled in real time. We report the growth of 980- and 850-nm vertical cavity surface emitting lasers (VCSEL's) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in situ monitoring and feedback control of layer thickness to obtain the highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained. The run-to-run variation of the Fabry-Perot wavelength of VCSEL structures is < ± 0.4%. Using this technique, the group III fluxes can also be calibrated and corrected for flux drifts, thus we are able to control the gain peak of the active region with a run-to-run variation of less than 0.3%. Surface emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 5 mA are measured at room temperature for 980- and 850-nm lasers, respectively. Output powers higher than 25 mW for 980-nm and 12 mW for 850-nm devices are obtained.

VCSEL-based optical transceiver module operating at 25 Gb/s and using a single CMOS IC

NASA Astrophysics Data System (ADS)

Afriat, Gil; Horwitz, Lior; Lazar, Dror; Issachar, Assaf; Pogrebinsky, Alexander; Ran, Adee; Shoor, Ehud; Bar, Roi; Saba, Rushdy

2012-01-01

We present here a low cost, small form factor, optical transceiver module composed of a CMOS IC transceiver, 850 nm emission wavelength VCSEL modulated at 25 Gb/s, and an InGaAs/InP PIN Photo Diode (PD). The transceiver IC is fabricated in a standard 28 nm CMOS process and integrates the analog circuits interfacing the VCSEL and PD, namely the VCSEL driver and Transimpedance Amplifier (TIA), as well as all other required transmitter and receiver circuits like Phase Locked Loop (PLL), Post Amplifier and Clock & Data Recovery (CDR). The transceiver module couples into a 62.5/125 um multi-mode (OM1) TX/RX fiber pair via a low cost plastic cover realizing the transmitter and receiver lens systems and demonstrates BER < 10-12 at the 25 Gb/s data rate over a distance of 3 meters. Using a 50/125 um laser optimized multi-mode fiber (OM3), the same performance was achieved over a distance of 30 meters.

Active implant for optoacoustic natural sound enhancement

NASA Astrophysics Data System (ADS)

Mohrdiek, S.; Fretz, M.; Jose James, R.; Spinola Durante, G.; Burch, T.; Kral, A.; Rettenmaier, A.; Milani, R.; Putkonen, M.; Noell, W.; Ortsiefer, M.; Daly, A.; Vinciguerra, V.; Garnham, C.; Shah, D.

2017-02-01

This paper summarizes the results of an EU project called ACTION: ACTive Implant for Optoacoustic Natural sound enhancement. The project is based on a recent discovery that relatively low levels of pulsed infrared laser light are capable of triggering activity in hair cells of the partially hearing (hearing impaired) cochlea and vestibule. The aim here is the development of a self-contained, smart, highly miniaturized system to provide optoacoustic stimuli directly from an array of miniature light sources in the cochlea. Optoacoustic compound action potentials (oaCAP) are generated by the light source fully inserted into the unmodified cochlea. Previously, the same could only be achieved with external light sources connected to a fiber optic light guide. This feat is achieved by integrating custom made VCSEL arrays at a wavelength of about 1550 nm onto small flexible substrates. The laser light is collimated by a specially designed silicon-based ultra-thin lens (165 um thick) to get the energy density required for the generation of oaCAP signals. A dramatic miniaturization of the packaging technology is also required. A long term biocompatible and hermetic sapphire housing with a size of less than a 1 cubic millimeter and miniature Pt/PtIr feedthroughs is developed, using a low temperature laser assisted process for sealing. A biofouling thin film protection layer is developed to avoid fibrinogen and cell growth on the system.

Low-frequency fluctuations in vertical cavity lasers: Experiments versus Lang-Kobayashi dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torcini, Alessandro; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, via Sansone 1, 50019 Sesto Fiorentino; Barland, Stephane

2006-12-15

The limits of applicability of the Lang-Kobayashi (LK) model for a semiconductor laser with optical feedback are analyzed. The model equations, equipped with realistic values of the parameters, are investigated below the solitary laser threshold where low-frequency fluctuations (LFF's) are usually observed. The numerical findings are compared with experimental data obtained for the selected polarization mode from a vertical cavity surface emitting laser (VCSEL) subject to polarization selective external feedback. The comparison reveals the bounds within which the dynamics of the LK model can be considered as realistic. In particular, it clearly demonstrates that the deterministic LK model, for realisticmore » values of the linewidth enhancement factor {alpha}, reproduces the LFF's only as a transient dynamics towards one of the stationary modes with maximal gain. A reasonable reproduction of real data from VCSEL's can be obtained only by considering the noisy LK or alternatively deterministic LK model for extremely high {alpha} values.« less

Fast Optoelectronic Switching Processes in Surface-Emitting Semiconductor Lasers and Nonlinear Etalons

DTIC Science & Technology

1992-05-01

molecular beam epitaxy (MWE). The crystal growers have been persuaded of the importance of this work, and several substrate rotation arrangements and In...RPG VCSELS for optical pumping at 800 wm GaAs/GaAlAs RPA etalons without epitaxial reflectors. The first three wafers were destined for above- and below...of MOCVD-grown GaAs/GaAIAs RPO- VCSEL samples with 20 quantum wells and epitaXial multilayer high-reflectivity stacks with R=3.995 and 0.999 was pumped

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hurtado, Antonio, E-mail: antonio.hurtado@strath.ac.uk; Javaloyes, Julien

Multiple controllable spiking patterns are achieved in a 1310 nm Vertical-Cavity Surface Emitting Laser (VCSEL) in response to induced perturbations and for two different cases of polarized optical injection, namely, parallel and orthogonal. Furthermore, reproducible spiking responses are demonstrated experimentally at sub-nanosecond speed resolution and with a controlled number of spikes fired. This work opens therefore exciting research avenues for the use of VCSELs in ultrafast neuromorphic photonic systems for non-traditional computing applications, such as all-optical binary-to-spiking format conversion and spiking information encoding.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

760 nm high-performance VCSEL growth and characterization

NASA Astrophysics Data System (ADS)

Rinaldi, Fernando; Ostermann, Johannes M.; Kroner, Andrea; Riedl, Michael C.; Michalzik, Rainer

2006-04-01

High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.

High-speed wavelength switching of tunable MEMS vertical cavity surface emitting laser by ringing suppression

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Nishimura, Shun; Nakahama, Masanori; Matsutani, Akihiro; Sakaguchi, Takahiro; Koyama, Fumio

2018-04-01

For use in wavelength division multiplexing (WDM) with high-speed wavelength routing functions, the fast wavelength switching of tunable lasers is a key function. A tunable MEMS vertical cavity surface emitting laser (VCSEL) is a good candidate as a light source for this purpose. The cantilever in MEMS VCSELs has a high mechanical resonance frequency thanks to its small size, but the switching time is limited by the ringing of the cantilever structure. In this paper, we analyzed the mechanical behavior of a cantilever MEMS mirror and demonstrated ringing-free operation with an engineered voltage signal. The applied voltage waveform was optimized in a two-step format and we experimentally obtained ringing free wavelength switching. We measured the transient response of the wavelength by inserting a tunable filter, exhibiting the settling time of less than 2.5 µs, which corresponds to a half period of the cantilever resonance frequency.

Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor

NASA Astrophysics Data System (ADS)

Mizutani, Mitsuhiro; Teramae, Fumiharu; Takeuchi, Kazutaka; Murase, Tatsunori; Naritsuka, Shigeya; Maruyama, Takahiro

2006-04-01

A vertical-cavity surface-emitting laser (VCSEL) was fabricated using a in situ reflectance monitor by molecular beam epitaxy (MBE). Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. However, these wavelengths shifted with decreasing substrate temperature after the growth, which could be reasonably explained by the temperature dependence of refractive index. Therefore, it is necessary to set a target wavelength at a growth temperature, considering the change. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Since it can directly measure the optical properties of the grown layers, the reflectance monitor greatly helps in the fabrication of a structure with the designed optical performance.

An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

NASA Astrophysics Data System (ADS)

Chuang, Hsueh-Hua

The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total result of the drift current and the diffusion current is less significant than the Ohmic current, especially in the cavity region. This simple iterative model is applied to commercially available oxide-confined VCSELs. The simulation results show excellent agreement with experimentally measured voltage-current curves (within 3.7% for a 10 mum and within 4% for a 5 mum diameter VCSEL) and light-current curves (within 2% for a 10 mum and within 9% for a 5 mum diameter VCSEL) curves and provides insight into the detailed distributions of current and voltage within a VCSEL. This difference between the theoretically calculated results and the measured results is less than the variation shown in the data sheets for production VCSELs.

Transverse Mode Dynamics and Ultrafast Modulation of Vertical-Cavity Surface-Emitting Lasers

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

2002-01-01

We show that multiple transverse mode dynamics of VCSELs (Vertical-Cavity Surface-Emitting Lasers) can be utilized to generate ultrafast intensity modulation at a frequency over 100 GHz, much higher than the relaxation oscillation frequency. Such multimode beating can be greatly enhanced by taking laser output from part of the output facet.

VCSELs for exascale computing, computer farms, and green photonics

NASA Astrophysics Data System (ADS)

Hofmann, Werner; Moser, Philip; Wolf, Philip; Larisch, Gunter; Li, Hui; Li, Wei; Lott, James; Bimberg, Dieter

2012-11-01

The bandwidth-induced communication bottleneck due to the intrinsic limitations of metal interconnects is inhibiting the performance and environmental friendliness of todaýs supercomputers, data centers, and in fact all other modern electrically interconnected and interoperable networks such as data farms and "cloud" fabrics. The same is true for systems of optical interconnects (OIs), where even when the metal interconnects are replaced with OIs the systems remain limited by bandwidth, physical size, and most critically the power consumption and lifecycle operating costs. Vertical-cavity surface-emitting lasers (VCSELs) are ideally suited to solve this dilemma. Global communication providers like Google Inc., Intel Inc., HP Inc., and IBM Inc. are now producing optical interconnects based on VCSELs. The optimal bandwidth per link may be analyzed by by using Amdahĺs Law and depends on the architecture of the data center and the performance of the servers within the data center. According to Google Inc., a bandwidth of 40 Gb/s has to be accommodated in the future. IBM Inc. demands 80 Tbps interconnects between solitary server chips in 2020. We recently realized ultrahigh bit rate VCSELs up to 49 Gb/s suited for such optical interconnects emitting at 980 nm. These devices show error-free transmission at temperatures up to 155°C and operate beyond 200°C. Single channel data-rates of 40 Gb/s were achieved up to 75°C. Record high energy efficiencies close to 50 fJ/bit were demonstrated for VCSELs emitting at 850 nm. Our devices are fabricated using a full three-inch wafer process, and the apertures were formed by in-situ controlled selective wet oxidation using stainless steel-based vacuum equipment of our own design. assembly, and operation. All device data are measured, recorded, and evaluated by our proprietary fully automated wafer mapping probe station. The bandwidth density of our present devices is expected to be scalable from about 100 Gbps/mm² to a physical limit of roughly 15 Tbps/mm² based on the current 12.5 Gb/s VCSEL technology. Still more energy-efficient and smaller volume laser diode devices dissipating less heat are mandatory for further up scaling of the bandwidth. Novel metal-clad VCSELs enable a reduction of the device's footprint for potentially ultrashort range interconnects by 1 to 2 orders of magnitude compared to conventional VCSELs thus enabling a similar increase of device density and bandwidth.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1.31mum: 1.46mum. These techniques offer the promise of inexpensive, high speed fiber networking.

Double high refractive-index contrast grating VCSEL

NASA Astrophysics Data System (ADS)

Gebski, Marcin; Dems, Maciej; Wasiak, Michał; Sarzała, Robert P.; Lott, J. A.; Czyszanowski, Tomasz

2015-03-01

Distributed Bragg reflectors (DBRs) are typically used as the highly reflecting mirrors of vertical-cavity surface-emitting lasers (VCSELs). In order to provide optical field confinement, oxide apertures are often incorporated in the process of the selective wet oxidation of high aluminum-content DBR layers. This technology has some potential drawbacks such as difficulty in controlling the uniformity of the oxide aperture diameters across a large-diameter (≥ 6 inch) production wafers, high DBR series resistance especially for small diameters below about 5 μm despite elaborate grading and doping schemes, free carrier absorption at longer emission wavelengths in the p-doped DBRs, reduced reliability for oxide apertures placed close to the quantum wells, and low thermal conductivity for transporting heat away from the active region. A prospective alternative mirror is a high refractive index contrast grating (HCG) monolithically integrated with the VCSEL cavity. Two HCG mirrors potentially offer a very compact and simplified VCSEL design although the problems of resistance, heat dissipation, and reliability are not completely solved. We present an analysis of a double HCG 980 nm GaAs-based ultra-thin VCSEL. We analyze the optical confinement of such a structure with a total optical thickness is ~1.0λ including the optical cavity and the two opposing and parallel HCG mirrors.

A compact, portable and low cost generic interrogation strain sensor system using an embedded VCSEL, detector and fibre Bragg grating

NASA Astrophysics Data System (ADS)

Lee, Graham C. B.; Van Hoe, Bram; Yan, Zhijun; Maskery, Oliver; Sugden, Kate; Webb, David; Van Steenberge, Geert

2012-03-01

We present a compact, portable and low cost generic interrogation strain sensor system using a fibre Bragg grating configured in transmission mode with a vertical-cavity surface-emitting laser (VCSEL) light source and a GaAs photodetector embedded in a polymer skin. The photocurrent value is read and stored by a microcontroller. In addition, the photocurrent data is sent via Bluetooth to a computer or tablet device that can present the live data in a real time graph. With a matched grating and VCSEL, the system is able to automatically scan and lock the VCSEL to the most sensitive edge of the grating. Commercially available VCSEL and photodetector chips are thinned down to 20 μm and integrated in an ultra-thin flexible optical foil using several thin film deposition steps. A dedicated micro mirror plug is fabricated to couple the driving optoelectronics to the fibre sensors. The resulting optoelectronic package can be embedded in a thin, planar sensing sheet and the host material for this sheet is a flexible and stretchable polymer. The result is a fully embedded fibre sensing system - a photonic skin. Further investigations are currently being carried out to determine the stability and robustness of the embedded optoelectronic components.

Progress and issues for high-speed vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lear, Kevin L.; Al-Omari, Ahmad N.

2007-02-01

Extrinsic electrical, thermal, and optical issues rather than intrinsic factors currently constrain the maximum bandwidth of directly modulated vertical cavity surface emitting lasers (VCSELs). Intrinsic limits based on resonance frequency, damping, and K-factor analysis are summarized. Previous reports are used to compare parasitic circuit values and electrical 3dB bandwidths and thermal resistances. A correlation between multimode operation and junction heating with bandwidth saturation is presented. The extrinsic factors motivate modified bottom-emitting structures with no electrical pads, small mesas, copper plated heatsinks, and uniform current injection. Selected results on high speed quantum well and quantum dot VCSELs at 850 nm, 980 nm, and 1070 nm are reviewed including small-signal 3dB frequencies up to 21.5 GHz and bit rates up to 30 Gb/s.

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters

NASA Astrophysics Data System (ADS)

Kesler, Benjamin; O'Brien, Thomas; Dallesasse, John M.

2017-02-01

A novel method for controlling the transverse lasing modes in both proton implanted and oxide-confined vertical- cavity surface-emitting lasers (VCSELs) with a multi-layer, patterned, dielectric anti-phase (DAP) filter is pre- sented. Using a simple photolithographic liftoff process, dielectric layers are deposited and patterned on individual VCSELs to modify (increase or decrease) the mirror reflectivity across the emission aperture via anti-phase reflections, creating spatially-dependent threshold material gain. The shape of the dielectric pattern can be tailored to overlap with specific transverse VCSEL modes or subsets of transverse modes to either facilitate or inhibit lasing by decreasing or increasing, respectively, the threshold modal gain. A silicon dioxide (SiO2) and titanium dioxide (TiO2) anti-phase filter is used to achieve a single-fundamental-mode, continuous-wave output power greater than 4.0 mW in an oxide-confined VCSEL at a lasing wavelength of 850 nm. A filter consisting of SiO2 and TiO2 is used to facilitate injection-current-insensitive fundamental mode and lower order mode lasing in proton implanted VCSELs at a lasing wavelength of 850 nm. Higher refractive index dielectric materials such as amorphous silicon (a-Si) can be used to increase the effectiveness of the anti-phase filter on proton implanted devices by reducing the threshold modal gain of any spatially overlapping modes. This additive, non-destructive method allows for mode selection at any lasing wavelength and for any VCSEL layer structure without the need for semiconductor etching or epitaxial regrowth. It also offers the capability of designing a filter based upon available optical coating materials.

Capacity upgrade in short-reach optical fibre networks: simultaneous 4-PAM 20 Gbps data and polarization-modulated PPS clock signal using a single VCSEL carrier

NASA Astrophysics Data System (ADS)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-11-01

In this work, a four-level pulse amplitude modulation (4-PAM) format with a polarization-modulated pulse per second (PPS) clock signal using a single vertical cavity surface emitting laser (VCSEL) carrier is for the first time experimentally demonstrated. We propose uncomplex alternative technique for increasing capacity and flexibility in short-reach optical communication links through multi-signal modulation onto a single VCSEL carrier. A 20 Gbps 4-PAM data signal is directly modulated onto a single mode 10 GHz bandwidth VCSEL carrier at 1310 nm, therefore, doubling the network bit rate. Carrier spectral efficiency is further maximized by exploiting the inherent orthogonal polarization switching of the VCSEL carrier with changing bias in transmission of a PPS clock signal. We, therefore, simultaneously transmit a 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal using a single VCSEL carrier. It is the first time a signal VCSEL carrier is reported to simultaneously transmit a directly modulated 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal. We further demonstrate on the design of a software-defined digital signal processing (DSP)-assisted receiver as an alternative to costly receiver hardware. Experimental results show that a 3.21 km fibre transmission with simultaneous 20 Gbps 4-PAM data signal and polarization-based PPS clock signal introduced a penalty of 3.76 dB. The contribution of polarization-based PPS clock signal to this penalty was found out to be 0.41 dB. Simultaneous distribution of data and timing clock signals over shared network infrastructure significantly increases the aggregated data rate at different optical network units (ONUs), without costly investment.

Development of integrated semiconductor optical sensors for functional brain imaging

NASA Astrophysics Data System (ADS)

Lee, Thomas T.

Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

Transverse Mode Dynamics of VCSELs Undergoing Current Modulation

NASA Technical Reports Server (NTRS)

Goorjian, Peter M.; Ning, C. Z.; Agrawal, Govind

2000-01-01

Transverse mode dynamics of a 20-micron-diameter vertical-cavity surface-emitting laser (VCSEL) undergoing gain switching by deep current modulation is studied numerically. The direct current (dc) level is set slightly below threshold and is modulated by a large alternating current (ac). The resulting optical pulse train and transverse-mode patterns are obtained numerically. The ac frequency is varied from 2.5 GHz to 10 GHz, and the ac amplitude is varied from one-half to four times that of the dc level. At high modulation frequencies, a regular pulse train is not generated unless the ac amplitude is large enough. At all modulation frequencies, the transverse spatial profile switches from single-mode to multiple-mode pattern as the ac pumping level is increased. Optical pulse widths vary in the range 5-30 ps. with the pulse width decreasing when either the frequency is increased or the ac amplitude is decreased. The numerical modeling uses an approximation form of the semiconductor Maxwell-Bloch equations. Temporal evolution of the spatial profiles of the laser (and of carrier density) is determined without any assumptions about the type or number of modes. Keywords: VCSELs, current modulation, gain switching, transverse mode dynamics, computational modeling

Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications

NASA Astrophysics Data System (ADS)

Kumari, Sulakshna; Gustavsson, Johan S.; Wang, Ruijun; Haglund, Emanuel P.; Westbergh, Petter; Sanchez, Dorian; Haglund, Erik; Haglund, Åsa; Bengtsson, Jörgen; Le Thomas, Nicolas; Roelkens, Gunther; Larsson, Anders; Baets, Roel

2015-02-01

We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (<99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG's influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm-1).

Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs

NASA Astrophysics Data System (ADS)

Hatakeyama, H.; Anan, T.; Akagawa, T.; Fukatsu, K.; Suzuki, N.; Tokutome, K.; Tsuji, M.

2009-02-01

In this paper, we describe high temperature operation of high speed 1.1μm-range oxide-confined vertical-cavity surfaceemitting lasers (VCSELs) for optical interconnection applications. For achieving high speed of over 25 Gbit/s under a high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs via accelerated life tests. The result showed extremely long MTTF lifetime of about 10 thousand hours under an ambient temperature of 150°C and a bias current of about 19 kA/cm2, a reliability that either equals or surpasses that of conventional 850-nm VCSELs with 10 Gbit/s. Moreover, we revealed a typical failure mode of the device; the result of analysis indicated that the failure was caused by <110> dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.

Free-Space Optical Interconnect Employing VCSEL Diodes

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

2009-01-01

Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

VCSEL fault location apparatus and method

DOEpatents

Keeler, Gordon A [Albuquerque, NM; Serkland, Darwin K [Albuquerque, NM

2007-05-15

An apparatus for locating a fault within an optical fiber is disclosed. The apparatus, which can be formed as a part of a fiber-optic transmitter or as a stand-alone instrument, utilizes a vertical-cavity surface-emitting laser (VCSEL) to generate a test pulse of light which is coupled into an optical fiber under test. The VCSEL is subsequently reconfigured by changing a bias voltage thereto and is used as a resonant-cavity photodetector (RCPD) to detect a portion of the test light pulse which is reflected or scattered from any fault within the optical fiber. A time interval .DELTA.t between an instant in time when the test light pulse is generated and the time the reflected or scattered portion is detected can then be used to determine the location of the fault within the optical fiber.

Oxide-apertured VCSEL with short period superlattice

NASA Astrophysics Data System (ADS)

Li, Lin; Zhong, Jingchang; Zhang, Yongming; Su, Wei; Zhao, Yingjie; Yan, Changling; Hao, Yongqin; Jiang, Xiaoguang

2004-12-01

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al_(0.9)Ga_(0.1)As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2 deg. off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 (Celsius degree) and the threshold current increased slowly with the increase of temperature.

Bistable Vertical-Cavity Surface-Emitting Laser. Structures on GaAs and Si Substrates

DTIC Science & Technology

1994-06-01

vertical - cavity surface - emitting lasers ( VCSELs ) [1,5,6 of publications below], fabrication processes to realize low...May 91 through 1 June 94 R&T Number: Contract / Grant Number: N00014-91-J-1952 Contract / Grant Title: Bistable Vertical - Cavity Surface - Emitting Laser ...T.J. Rogers, B.G. Streetman, S.C. Smith, and R.D. Burnham, "Cascadabity of an Optically Iathing Vertical - Cavity Surface - Emitting Laser

InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices

DTIC Science & Technology

2000-06-23

vertical cavity surface emitting lasers ( VCSELs ) on GaAs is expected to be possible by... molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can...work with GaAs/AlAs DBR-mirrors is expected to lead to novel vertical cavity lasers for optical fiber communication systems. Acknowledgement

Multi-longitudinal-mode micro-laser model

NASA Astrophysics Data System (ADS)

Staliunas, Kestutis

2017-10-01

We derive a convenient model for broad aperture micro-lasers, such as microchip lasers, broad area semiconductor lasers, or VCSELs, taking into account several longitudinal mode families. We provide linear stability analysis, and show characteristic spatio-temporal dynamics in such multi-longitudinal mode laser models. Moreover, we derive the coupled mode model in the presence of intracavity refraction index modulation (intracavity photonic crystal). Contribution to the Topical Issue "Theory and Applications of the Lugiato-Lefever Equation", edited by Yanne K. Chembo, Damia Gomila, Mustapha Tlidi, Curtis R. Menyuk.

Chip-to-chip optical link by using optical wiring method

NASA Astrophysics Data System (ADS)

Cho, In-Kui; Ahn, Seoung Ho; Jeong, Myung-Yung; Rho, Byung Sup; Park, Hyo Hoon

2008-01-01

A practical optical link system was prepared with a transmitter (Tx) and receiver (Rx). The optical TRx module consisted of a metal optical bench, a module printed circuit board (PCB), a driver/receiver IC, a VCSEL/PD array, and an optical link block composed of plastic optical fiber (POF). For the optical interconnection between the light-sources and detectors, an optical wiring method has been proposed to enable easy assembly. This paper provides a method for optical interconnection between an optical Tx and an optical Rx, comprising the following steps: (a) forming a light source device, an optical detection device, and an optical transmission unit on a substrate (metal optical bench (MOB)); (b) preparing a flexible optical transmission-connection medium (optical wiring link) to optically connect the light source device formed on the substrate with the optical detection device; and (c) directly connecting one end of the surface-finished optical transmission connection medium with the light source device and the other end with the optical detection device. A chip-to-chip optical link system constructed with TRx modules was fabricated and the optical characteristics were measured. The results clearly demonstrate that the use of an optical wiring method can provide robust and cost-effective assembly for vertical-cavity surface-emitting lasers (VCSELs) and photodiodes (PDs). We successfully achieved a 5 Gb/s data transmission rate with this optical link.

Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources

NASA Astrophysics Data System (ADS)

Sze, Theresa; Mahbobzadeh, A. M.; Cheng, Julian; Hersee, Stephen D.; Osinski, Marek; Brueck, Steven R. J.; Malloy, Kevin J.

1993-06-01

We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.

Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

PubMed

Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

2013-06-01

Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

Delay feedback induces a spontaneous motion of two-dimensional cavity solitons in driven semiconductor microcavities

NASA Astrophysics Data System (ADS)

Tlidi, M.; Averlant, E.; Vladimirov, A.; Panajotov, K.

2012-09-01

We consider a broad area vertical-cavity surface-emitting laser (VCSEL) operating below the lasing threshold and subject to optical injection and time-delayed feedback. We derive a generalized delayed Swift-Hohenberg equation for the VCSEL system, which is valid close to the nascent optical bistability. We first characterize the stationary-cavity solitons by constructing their snaking bifurcation diagram and by showing clustering behavior within the pinning region of parameters. Then, we show that the delayed feedback induces a spontaneous motion of two-dimensional (2D) cavity solitons in an arbitrary direction in the transverse plane. We characterize moving cavity solitons by estimating their threshold and calculating their velocity. Numerical 2D solutions of the governing semiconductor laser equations are in close agreement with those obtained from the delayed generalized Swift-Hohenberg equation.

Dynamic Self-Locking of an OEO Containing a VCSEL

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Matsko, Andrey; Yu, Nan; Savchenkov, Anatoliy; Maleki, Lute

2009-01-01

A method of dynamic self-locking has been demonstrated to be effective as a means of stabilizing the wavelength of light emitted by a vertical-cavity surface-emitting laser (VCSEL) that is an active element in the frequency-control loop of an optoelectronic oscillator (OEO) designed to implement an atomic clock based on an electromagnetically- induced-transparency (EIT) resonance. This scheme can be considered an alternative to the one described in Optical Injection Locking of a VCSEL in an OEO (NPO-43454), NASA Tech Briefs, Vol. 33, No. 7 (July 2009), page 33. Both schemes are expected to enable the development of small, low-power, high-stability atomic clocks that would be suitable for use in applications involving precise navigation and/or communication. To recapitulate from the cited prior article: In one essential aspect of operation of an OEO of the type described above, a microwave modulation signal is coupled into the VCSEL. Heretofore, it has been well known that the wavelength of light emitted by a VCSEL depends on its temperature and drive current, necessitating thorough stabilization of these operational parameters. Recently, it was discovered that the wavelength also depends on the microwave power coupled into the VCSEL. This concludes the background information. From the perspective that led to the conception of the optical injection-locking scheme described in the cited prior article, the variation of the VCSEL wavelength with the microwave power circulating in the frequency-control loop is regarded as a disadvantage and optical injection locking is a solution of the problem of stabilizing the wavelength in the presence of uncontrolled fluctuations in the microwave power. The present scheme for dynamic self-locking emerges from a different perspective, in which the dependence of VCSEL wavelength on microwave power is regarded as an advantageous phenomenon that can be exploited as a means of controlling the wavelength. The figure schematically depicts an atomic-clock OEO of the type in question, wherein (1) the light from the VCSEL is used to excite an EIT resonance in selected atoms in a gas cell (e.g., 87Rb atoms in a low-pressure mixture of Ar and Ne) and (2) the power supplied to the VCSEL is modulated by a microwave signal that includes components at beat frequencies among the VCSEL wavelength and modulation sidebands. As the VCSEL wavelength changes, it moves closer to or farther from a nearby absorption spectral line, and the optical power transmitted through the cell (and thus the loop gain) changes accordingly. A change in the loop gain causes a change in the microwave power and, thus, in the VCSEL wavelength. It is possible to choose a set of design and operational parameters (most importantly, the electronic part of the loop gain) such that the OEO stabilizes itself in the sense that an increase in circulating microwave power causes the VCSEL wavelength to change in a direction that results in an increase in optical absorption and thus a decrease in circulating microwave power. Typically, such an appropriate choice of operational parameters involves setting the nominal VCSEL wavelength to a point on the shorter-wavelength wing of an absorption spectral line.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

VCSEL-based fiber optic link for avionics: implementation and performance analyses

NASA Astrophysics Data System (ADS)

Shi, Jieqin; Zhang, Chunxi; Duan, Jingyuan; Wen, Huaitao

2006-11-01

A Gb/s fiber optic link with built-in test capability (BIT) basing on vertical-cavity surface-emitting laser (VCSEL) sources for military avionics bus for next generation has been presented in this paper. To accurately predict link performance, statistical methods and Bit Error Rate (BER) measurements have been examined. The results show that the 1Gb/s fiber optic link meets the BER requirement and values for link margin can reach up to 13dB. Analysis shows that the suggested photonic network may provide high performance and low cost interconnections alternative for future military avionics.

Traveling wave electrode design of electro-optically modulated coupled-cavity surface-emitting lasers.

PubMed

Zujewski, Mateusz; Thienpont, Hugo; Panajotov, Krassimir

2012-11-19

We present a novel design of an electro-optically modulated coupled-cavity vertical-cavity surface-emitting laser (CC-VCSEL) with traveling wave electrodes of the modulator cavity, which allows to overcome the RC time constant of a traditional lumped electrode structures. The CC-VCSEL optical design is based on longitudinal mode switching which has recently experimentally demonstrated a record modulation speed. We carry out segmented transmission line electrical design of the modulator cavity in order to compensate for the low impedance of the modulator section and to match the 50 Ω electrical network. We have optimized two types of highly efficient modulator structures reaching -3 dB electrical cut-off frequency of f(cut-off) = 330 GHz with maximum reflection of -22 dB in the range from f(LF) = 100 MHz to f(cut-off) and 77 - 89% modulation efficiency.

Integrated photodiodes complement the VCSEL platform

NASA Astrophysics Data System (ADS)

Grabherr, Martin; Gerlach, Philipp; King, Roger; Jäger, Roland

2009-02-01

Many VCSEL based applications require optical feedback of the emitted light. E.g. light output monitor functions in transceivers are used to compensate for thermally induced power variation, power degradation, or even breakdown of pixels if logic for redundancy is available. In this case integrated photodiodes offer less complex assembly compared to widely used hybrid solutions, e.g. known in LC-TOSA assemblies. Especially for chip-on-board (COB) assembly and array configurations, integrated monitor diodes offer a simple and compact power monitoring possibility. For 850 nm VCSELs the integrated photodiodes can be placed between substrate and bottom-DBR, on top of the top-DBR, or inbetween the layer sequence of one DBR. Integrated intra-cavity photodiodes offer superior characteristics in terms of reduced sensitivity for spontaneously emitted light [1] and thus are very well suited for power monitoring or even endof- life (EOL) detection. We present an advanced device design for an intra-cavity photodiode and according performance data in comparison with competing approaches.

50 Gb/s NRZ and 4-PAM data transmission over OM5 fiber in the SWDM wavelength range

NASA Astrophysics Data System (ADS)

Agustin, M.; Ledentsov, N.; Kropp, J.-R.; Shchukin, V. A.; Kalosha, V. P.; Chi, K. L.; Khan, Z.; Shi, J. W.; Ledentsov, N. N.

2018-02-01

The development of advanced OM5 wideband multimode fiber (WBMMF) allowing high modal bandwidth in the spectral range 840-950 nm motivates research in vertical-cavity-surface-emitting-lasers (VCSELs) at wavelengths beyond the previously accepted for short reach communications. Thus, short wavelength division multiplexing (SWDM) solutions can be implemented as a strategy to satisfy the increasing demand of data rate in datacenter environments. As an alternative solution to 850 nm parallel links, four wavelengths with 30 nm separation between 850 nm and 940 nm can be multiplexed on a single OM5-MMF, so the number of fibers deployed is reduced by a factor of four. In this paper high speed transmission is studied for VCSELs in the 850 nm - 950 nm range. The devices had a modulating bandwidth of 26-28 GHz. 50 Gb/s non-return-to-zero (NRZ) operation is demonstrated at each wavelength without preemphasis and equalization, with bit-error-rate (BER) below 7% forward error correction (FEC) threshold. Furthermore, the use of single-mode VCSELs (SM-VCSELs) as a way to mitigate the effects of chromatic dispersions in order to extend the maximum transmission distance over OM5 is explored. Analysis of loss as a function of wavelength in OM5 fiber is also performed. Significant decrease is observed, from 2.2 dB/km to less than 1.7 dB/km at 910 nm wavelength of the VCSEL.

Polymeric waveguide array with 45 degree slopes fabricated by bottom side tilted exposure

NASA Astrophysics Data System (ADS)

Lin, Xiaohui; Dou, Xinyuan; Wang, Alan X.; Chen, Ray T.

2011-01-01

This paper demonstrated a practical fabrication process of polymeric waveguide array (12 channels) with 50μm(W)×50μm(H)×23mm(L) dimension and mirror embedded 45° degree slopes for vertical coupling purpose. The entire process contained three main parts: a SU8 pre-mold with 45° slope, a PDMS mold and the final waveguide array device. The key step of fabricating the pre-mold included a bottom side tilted exposure of SU8 photo resist. By placing the sample upside down, tilting by 58.7° and immersing into DI water, the ultraviolet (UV) beam that shined vertically was directed to go through from the bottom of the glass substrate into top side SU8 resist with 45° angle to form the surface. This method was able to guarantee no-gap contact between the mask pattern and the photo resist when exposing. By comparing the process complexity and achieved structure of the top and bottom side exposure, the later was proved to be a promising method for making high quality tilted structure without any tailing effect. The reversed PDMS mold was then fabricated on the SU8 pre-mold. The PDMS mold was used to imprint the cladding layer of the waveguide array. After metal deposition, core filling and top cladding layer coating, the final polymeric waveguide array device was achieved. For performance evaluation, 850nm laser beam from VCSEL was modulated to 10Gbps signals and vertically coupled into the waveguide array. The eye diagrams revealed high Q factor when transmitting signals along these waveguide array.

Hard and flexible optical printed circuit board

NASA Astrophysics Data System (ADS)

Lee, El-Hang; Lee, Hyun Sik; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.

2007-02-01

We report on the design and fabrication of hard and flexible optical printed circuit boards (O-PCBs). The objective is to realize generic and application-specific O-PCBs, either in hard form or flexible form, that are compact, light-weight, low-energy, high-speed, intelligent, and environmentally friendly, for low-cost and high-volume universal applications. The O-PCBs consist of 2-dimensional planar arrays of micro/nano-scale optical wires, circuits and devices that are interconnected and integrated to perform the functions of sensing, storing, transporting, processing, switching, routing and distributing optical signals on flat modular boards. For fabrication, the polymer and organic optical wires and waveguides are first fabricated on a board and are used to interconnect and integrate micro/nano-scale photonic devices. The micro/nano-optical functional devices include lasers, detectors, switches, sensors, directional couplers, multi-mode interference devices, ring-resonators, photonic crystal devices, plasmonic devices, and quantum devices. For flexible boards, the optical waveguide arrays are fabricated on flexible poly-ethylen terephthalate (PET) substrates by UV embossing. Electrical layer carrying VCSEL and PD array is laminated with the optical layer carrying waveguide arrays. Both hard and flexible electrical lines are replaced with high speed optical interconnection between chips over four waveguide channels up to 10Gbps on each. We discuss uses of hard or flexible O-PCBs for telecommunication systems, computer systems, transportation systems, space/avionic systems, and bio-sensor systems.

Optical interconnects based on VCSELs and low-loss silicon photonics

NASA Astrophysics Data System (ADS)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Control of Polarization of Vertical-Cavity Surface - Lasers

NASA Astrophysics Data System (ADS)

Sun, Decai

1995-01-01

To date, most vertical-cavity surface-emitting lasers (VCSELs) have been fabricated from structures grown on GaAs (InP) substrates oriented in the (001) crystallographic axis. For the most part, these devices have exhibited linear, but random polarization states with no definite relationship to the in-plane crystallographic axes. The control of the polarization states of these devices is important for polarization-sensitive applications. Such applications include magneto-optic disk recording and coherent detection in advanced communication systems. In this thesis, a novel approach for controlling the polarization eigen-states of VCSELs is investigated. The approach utilizes anisotropic optical properties found in quantum wells (QW) oriented in directions other than the (001) to stabilize their polarization states. Specifically, the (110) direction is chosen for this work. An analysis of the in-plane optical matrix element connected with the gain coefficient of (In,Ga)As/GaAs QW structures grown on (110) GaAs substrates is conducted. It is found that the in-plane gain distribution is elliptically anisotropic--with a maximum directed along the (110) - (110) crystallographic axis. The design and growth of (In,Ga)As/GaAs QW VCSEL structures is studied in this work. The transition wavelengths of the (001) - and (110) -oriented (In,Ga)As/GaAs QW structures are calculated using a finite QW model. Distributed Bragg reflector mirrors consisting of GaAs/AlAs quarter wave layers are modeled using a characteristic matrix method. Threshold gain, internal and differential quantum efficiencies are analyzed. The growth of III-V compounds on (110) GaAs substrates by molecular beam epitaxy is investigated. High quality materials are successfully grown on the misoriented (110) GaAs substrates tilted by 6^circ toward the (111)B surface. (In,Ga)As/GaAs QW VCSEL structures are grown on (001) and (110) GaAs substrates. (In,Ga)As/GaAs QW VCSELs are fabricated from structures grown on the (001) and (110) surfaces. Experimental characterization shows that the devices fabricated from the (110) surface exhibit stable, well-defined polarization states at room temperature; this is in contrast to the random polarization characteristics observed from the VCSELs fabricated from the (001) surface. This stability is believed to be a consequence of the predicted anisotropic gain distribution on the (110) surface. Of the two orthogonal eigen-polarizations observed, the one with the higher optical intensity is found to be aligned along the (110) - (110) crystallographic axis; this is in agreement with theoretical predictions.

Mega-pixel PQR laser chips for interconnect, display ITS, and biocell-tweezers OEIC

NASA Astrophysics Data System (ADS)

Kwon, O'Dae; Yoon, J. H.; Kim, D. K.; Kim, Y. C.; Lee, S. E.; Kim, S. S.

2008-02-01

We describe a photonic quantum ring (PQR) laser device of three dimensional toroidal whispering gallery cavity. We have succeeded in fabricating the first genuine mega-pixel laser chips via regular semiconductor technology. This has been realized since the present injection laser emitting surface-normal dominant 3D whispering gallery modes (WGMs) can be operated CW with extremely low operating currents (μA-nA per pixel), together with the lasing temperature stabilities well above 140 deg C with minimal redshifts, which solves the well-known integration problems facing the conventional VCSEL. Such properties unusual for quantum well lasers become usual because the active region, involving vertically confining DBR structure in addition to the 2D concave WGM geometry, induces a 'photonic quantum ring (PQR)-like' carrier distribution through a photonic quantum corral effect. A few applications of such mega-pixel PQR chips are explained as follows: (A) Next-generation 3D semiconductor technologies demand a strategy on the inter-chip and intra-chip optical interconnect schemes with a key to the high-density emitter array. (B) Due to mounting traffic problems and fatalities ITS technology today is looking for a revolutionary change in the technology. We will thus outline how 'SLEEP-ITS' can emerge with the PQR's position-sensing capability. (C) We describe a recent PQR 'hole' laser of convex WGM: Mega-pixel PQR 'hole' laser chips are even easier to fabricate than PQR 'mesa' lasers. Genuine Laguerre-Gaussian (LG) beam patterns of PQR holes are very promising for biocell manipulations like sorting mouse myeloid leukemia (M1s) cells. (D) Energy saving and 3D speckle-free POR laser can outdo LEDs in view of red GaAs and blue GaN devices fabricated recently.

High-frequency polarization dynamics in spin-lasers: pushing the limits

NASA Astrophysics Data System (ADS)

Gerhardt, Nils C.; Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Hofmann, Martin R.

2017-09-01

While the high-frequency performance of conventional lasers is limited by the coupled carrier-photon dynamics, spin-polarized lasers have a high potential to overcome this limitation and to push the direct modulation bandwidth beyond 100 GHz. The key is to utilize the ultrafast polarization dynamics in spin-polarized vertical cavity surface-emitting lasers (spin-VCSELs) which is decoupled from the intensity dynamics and its fundamental limitations. The polarization dynamics in such devices, characterized by the polarization oscillation resonance frequency, is mainly determined by the amount of birefringence in the cavity. Using an approach for manipulating the birefringence via mechanical strain we were able to increase the polarization dynamics to resonance frequencies of more than 40 GHz. Up to now these values are only limited by the setup to induce birefringence and do not reflect any fundamental limitations. Taking our record results for the birefringence-induced mode splitting of more than 250 GHz into account, the concept has the potential to provide polarization modulation in spin-VCSELs with modulation frequencies far beyond 100 GHz. This makes them ideal devices for next-generation fast optical interconnects. In this paper we present experimental results for ultrafast polarization dynamics up to 50 GHz and compare them to numerical simulations.

Polarization-dependent coupling between a polarization-independent high-index-contrast subwavelength grating and waveguides

NASA Astrophysics Data System (ADS)

Katayama, Takeo; Ito, Jun; Kawaguchi, Hitoshi

2016-07-01

We investigated the optical coupling between a polarization-independent high-index-contrast subwavelength grating (HCG) and two orthogonal in-plane waveguides. We fabricated the HCG with waveguides on a silicon-on-insulator substrate and demonstrated that a waveguide with a strong output is switched by changing the polarization of light injected into the HCG. The light coupled more strongly to the waveguide in the direction perpendicular to the polarization of the incident light than to that in the parallel direction. If this waveguide-coupled HCG is incorporated into a polarization bistable vertical-cavity surface-emitting laser (VCSEL), the output waveguide can be switched by changing the lasing polarization of the VCSEL.

Mode suppression in metal filled photonic crystal vertical cavity lasers

NASA Astrophysics Data System (ADS)

Griffin, Benjamin G.; Arbabi, Amir; Goddard, Lynford L.

2012-03-01

Simulation results for an etched air hole photonic crystal (PhC) vertical cavity surface emitting laser (VCSEL) structure with various thicknesses of metal deposited inside the holes are presented. The higher-order modes of the structure are more spread out than the fundamental mode, and penetrate into the metal-filled holes. Due to the lossy nature of the metal, these higher-order modes experience a greater loss than the fundamental mode, resulting in an enhanced side mode suppression ratio (SMSR). A figure of merit for determining which metals would have the greatest impact on the SMSR is derived and validated using a transmission matrix method calculation. A full three-dimensional simulation of the PhC VCSEL structure is performed using the plane wave admittance method, and SMSRs are calculated for increasing metal thicknesses. Of the metals simulated, chromium provided the greatest SMSR enhancement with more than a 4 dB improvement with 500 nm of metal for an operating current of 12 times threshold.

Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woo June Choi; Wang, R K

2014-08-31

We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity.more » 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)« less

Performance of a fire detector based on a compact laser spectroscopic carbon monoxide sensor.

PubMed

Hangauer, A; Chen, J; Strzoda, R; Fleischer, M; Amann, M-C

2014-06-02

In this paper we show the suitability of a miniaturized tunable diode laser spectroscopy (TDLS)-based carbon-monoxide (CO) sensor for fire detection applications. The sensor utilizes a vertical-cavity surface-emitting laser (VCSEL) and inherent calibration scheme with reference gas filled in the photodetector housing. The fire-detection experiments are carried out under realistic conditions as described in the European standard EN54. The CO generation of all class C fires (according to EN54) could be well resolved. The cross-sensitivity to other substances was found to be very low: the maximum CO false response from cigarette smoke, hairspray and general aerosols reaches a low value of a few μL/L and only if the substance is directly applied into the sensor gas inlet. Therefore this sensor overcomes the disadvantage of high false alarm rate given by smoke detectors and is also in small size which is suitable for household and industrial applications. Hence, the VCSEL-based TDLS sensor is shown to have sufficient performance for fire-detection. It has advantages such as capability for fail-safe operation and, low cross-sensitivities as compared to existing point fire detector technology which is presently limited by these factors.

Development of a high-speed VCSEL OCT system for real-time imaging of conscious patients larynx using a hand-held probe (Conference Presentation)

NASA Astrophysics Data System (ADS)

Rangarajan, Swathi; Chou, Li-Dek; Coughlan, Carolyn; Sharma, Giriraj; Wong, Brian J. F.; Ramalingam, Tirunelveli S.

2016-02-01

Fourier domain optical coherence tomography (FD-OCT) is a noninvasive imaging modality that has previously been used to image the human larynx. However, differences in anatomical geometry and short imaging range of conventional OCT limits its application in a clinical setting. In order to address this issue, we have developed a gradient-index (GRIN) lens rod-based hand-held probe in conjunction with a long imaging range 200 kHz Vertical-Cavity Surface Emitting Lasers (VCSEL) swept-source optical coherence tomography (SS-OCT) system for high speed real-time imaging of the human larynx in an office setting. This hand-held probe is designed to have a long and dynamically tunable working distance to accommodate the differences in anatomical geometry of human test subjects. A nominal working distance (~6 cm) of the probe is selected to have a lateral resolution <100 um within a depth of focus of 6.4 mm, which covers more than half of the 12 mm imaging range of the VCSEL laser. The maximum lateral scanning range of the probe at 6 cm working distance is approximately 8.4 mm, and imaging an area of 8.5 mm by 8.5 mm is accomplished within a second. Using the above system, we will demonstrate real-time cross-sectional OCT imaging of larynx during phonation in vivo in human and ex-vivo in pig vocal folds.

Vertical-Cavity Surface-Emitting Laser Diodes: Design, Growth, Mode Control and Integration by Fluidic Self-Assembly

NASA Astrophysics Data System (ADS)

Hadley, Mark Alfred

Some important problems to overcome in the design and fabrication of vertical-cavity surface-emitting laser diodes (VCSELs) are: narrow design tolerances, molecular beam epitaxy growth control and multiple transverse modes. This dissertation addresses each of these problems. First, optical, electrical and thermal design issues are discussed in detail. Second, a new growth method using the thermal emission from the substrate during growth is described which is used to accurately control the growth of multilayer structures. The third problem addressed is that of multiple transverse modes. For many applications it is desirable for a VCSEL to lase in the lowest-order transverse mode. In most structures, this only occurs at low powers. It is shown that an external cavity can be used to force a VCSEL to lase in a single transverse mode at all power levels. A new type of VCSEL, grown on a p-doped substrate in order to increase injection uniformity, is designed specifically for use in an external cavity. There are two types of external cavities used to control modes: a long external "macro-cavity" and a short external "micro-cavity." These external cavities have been used to obtain peak powers of over 100 mW while remaining in the fundamental mode under pulsed operation. Finally, a more general topic is researched. This topic, called fluidic self-assembly (FSA), is a new integration technique that can be used not only to integrate VCSELs on a separate substrate, but to integrate many different material systems and devices together on the same substrate. The basic concept of FSA is to make a large number of objects of a particular shape. On a separate substrate, holes that match the shape of the objects are also fabricated. By placing the substrate in an inert fluid containing the objects, and recirculating the fluid and the objects over the substrate, it is possible to fill the holes with correctly oriented objects. Results of a FSA study are reported in which 100% fill factors are obtained. Specifically, FSA was used to assemble two different sizes of silicon blocks into holes in a silicon substrate. Fabrication techniques as well as FSA results are included.

Applications of 1.55 μm optically injection-locked VCSELs in wavelength division multiplexed passive optical networks

NASA Astrophysics Data System (ADS)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.; Hofmann, Werner; Amann, Marcus C.

2007-11-01

In this paper, we will discuss the utilization of optically injection-locked (OIL) 1.55 μm vertical-cavity surface-emitting lasers (VCSELs) for operation as low-cost, stable, directly modulated, and potentially uncooled transmitters, whereby the injection-locking master source is furnished by modulated downstream signals. Such a transmitter will find useful application in wavelength division multiplexed passive optical networks (WDM-PONs) which is actively being developed to meet the ever-increasing bandwidth demands of end users. Our scheme eliminates the need for external injection locking optical sources, external modulators, and wavelength stabilization circuitry. We show through experiments that the injection-locked VCSEL favors low injection powers and responds only strongly to the carrier but not the modulated data of the downstream signal. Further, we will discuss results from experimental studies performed on the dependence of OIL-VCSELs in bidirectional networks on the degree of Rayleigh backscattered signal and extinction ratio. We show that error-free upstream performance can be achieved when the upstream signal to Rayleigh backscattering ratio is greater than 13.4 dB, and with minimal dependence on the downstream extinction ratio. We will also review a fault monitoring and localization scheme based on a highly-sensitive yet low-cost monitor comprising a low output power broadband source and low bandwidth detectors. The proposed scheme benefits from the high reflectivity top distributed Bragg reflector mirror of the OIL-VCSEL, incurring only a minimal penalty on the upstream transmissions of the existing infrastructure. Such a scheme provides fault monitoring without having to further invest in the upgrade of customer premises.

Time skewing and amplitude nonlinearity mitigation by feedback equalization for 56 Gbps VCSEL-based PAM-4 links

NASA Astrophysics Data System (ADS)

You, Yue; Zhang, Wenjia; Sun, Lin; Du, Jiangbing; Liang, Chenyu; Yang, Fan; He, Zuyuan

2018-03-01

The vertical cavity surface emitting laser (VCSEL)-based multimode optical transceivers enabled by pulse amplitude modulation (PAM)-4 will be commercialized in near future to meet the 400-Gbps standard short reach optical interconnects. It is still challenging to achieve over 56/112-Gbps with the multilevel signaling as the multimode property of the device and link would introduce the nonlinear temporal response for the different levels. In this work, we scrutinize the distortions that relates to the multilevel feature of PAM-4 modulation, and propose an effective feedback equalization scheme for 56-Gbps VCSEL-based PAM-4 optical interconnects system to mitigate the distortions caused by eye timing-skew and nonlinear power-dependent noise. Level redistribution at Tx side is theoretically modeled and constructed to achieve equivalent symbol error ratios (SERs) of four levels and improved BER performance. The cause of the eye skewing and the mitigation approach are also simulated at 100-Gbps and experimentally investigated at 56-Gbps. The results indicate more than 2-dB power penalty improvement has been achieved by using such a distortion aware equalizer.

Impact of Data Transmission over 10 Gbps on High-Density and Low-Cost Optoelectronic Module with Polynorbornene Waveguides

NASA Astrophysics Data System (ADS)

Ito, Yuka; Terada, Shinsuke; Arai, Shinya; Fujiwara, Makoto; Mori, Tetsuya; Choki, Koji; Fukushima, Takafumi; Koyanagi, Mitsumasa

2012-04-01

We proposed a rigid/flex optoelectronic (O/E) module with 48-channel polymeric waveguides for short-distance board-level optical interconnection. A flexible O/E test module was fabricated in the following two steps by using standard packaging processes. First, two vertical cavity surface emitting laser diodes (VCSELs) and one VCSEL driver (VD) were flip-chip bonded to a completed flexible printed circuit board (PCB), and two photodiodes (PDs) and one transimpedance amplifier/limiting amplifier (TIA/LA) to another flexible PCB. Second, the two flexible PCBs were attached with a polynorbornene (PNB) sheet in which high-density PNB waveguides were formed by UV exposure. Active areas of VCSELs and PDs on the flexible PCBs were aligned to micromirrors of the waveguides with -6 µm offset toward the signal propagation direction. We successfully demonstrated data transmission over 10 Gbps and low inter-channel crosstalk of less than -20 dB was achieved in the flexible O/E test module with 120-mm-long and 62.5-µm-pitch waveguides.

Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology.

PubMed

Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J S; Kraus, Martin F; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E; Fujimoto, James G

2013-07-01

We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated.

Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology

PubMed Central

Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J. S.; Kraus, Martin F.; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E.; Fujimoto, James G.

2013-01-01

We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated. PMID:23847737

A full-duplex working integrated optoelectronic device for optical interconnect

NASA Astrophysics Data System (ADS)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

Optical Breath Gas Sensor for Extravehicular Activity Application

NASA Technical Reports Server (NTRS)

Wood, William R.; Casias, Miguel E.; Vakhtin, Andrei B.; Pilgrim, Jeffrey S> ; Chullen, Cinda; Falconi, Eric A.

2012-01-01

The function of the infrared gas transducer used during extravehicular activity (EVA) in the current space suit is to measure and report the concentration of carbon dioxide (CO2) in the ventilation loop. The next generation Portable Life Support System (PLSS) requires next generation CO2 sensing technology with performance beyond that presently in use on the Shuttle/International Space Station extravehicular mobility unit (EMU). Accommodation within space suits demands that optical sensors meet stringent size, weight, and power requirements. A laser diode (LD) spectrometer based on wavelength modulation spectroscopy (WMS) is being developed for this purpose by Vista Photonics, Inc. Two prototype devices were delivered to NASA Johnson Space Center (JSC) in September 2011. The sensors incorporate a laser diode based CO2 channel that also includes an incidental water vapor (humidity) measurement and a separate oxygen (O2) channel using a vertical cavity surface emitting laser (VCSEL). Both prototypes are controlled digitally with a field-programmable gate array (FPGA)/microcontroller architecture. Based on the results of the initial instrument development, further prototype development and testing of instruments leveraging the lessons learned were desired. The present development extends and upgrades the earlier hardware to the Advanced PLSS 2.0 test article being constructed and tested at JSC. Various improvements to the electronics and gas sampling are being advanced by this project. The combination of low power electronics with the performance of a long wavelength laser spectrometer enables multi-gas sensors with significantly increased performance over that presently offered in the EMU. .

NASA Tech Briefs, July 2004

NASA Technical Reports Server (NTRS)

2004-01-01

Topics: Optoelectronic Sensor System for Guidance in Docking; Hybrid Piezoelectric/Fiber-Optic Sensor Sheets; Multisensor Arrays for Greater Reliability and Accuracy; Integrated-Optic Oxygen Sensors; Ka-Band Autonomous Formation Flying Sensor; CMOS VLSI Active-Pixel Sensor for Tracking; Lightweight, Self-Deploying Foam Antenna Structures; Electrically Small Microstrip Quarter-Wave Monopole Antennas; A 2-to-28-MHz Phase-Locked Loop; Portable Electromyograph; Open-Source Software for Modeling of Nanoelectronic Devices; Software for Generating Strip Maps from SAR Data; Calibration Software for use with Jurassicprok; Software for Probabilistic Risk Reduction; Software Processes SAR Motion-Measurement Data; Improved Method of Purifying Carbon Nanotubes; Patterned Growth of Carbon Nanotubes or Nanofibers; Lightweight, Rack-Mountable Composite Cold Plate/Shelves; SiC-Based Miniature High-Temperature Cantilever Anemometer; Inlet Housing for a Partial-Admission Turbine; Lightweight Thermoformed Structural Components and Optics; Growing High-Quality InAs Quantum Dots for Infrared Lasers; Selected Papers on Protoplanetary Disks; Module for Oxygenating Water without Generating Bubbles; Coastal Research Imaging Spectrometer; Rapid Switching and Modulation by use of Coupled VCSELs; Laser-Induced-Fluorescence Photogrammetry and Videogrammetry; Laboratory Apparatus Generates Dual-Species Cold Atomic Beam; Laser Ablation of Materials for Propulsion of Spacecraft; Small Active Radiation Monitor; Hybrid Image-Plane/Stereo Manipulation; Partitioning a Gridded Rectangle into Smaller Rectangles; Digital Radar-Signal Processors Implemented in FPGAs; Part 1 of a Computational Study of a Drop-Laden Mixing Layer; and Some Improvements in Signal-Conditioning Circuits.

Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures

NASA Astrophysics Data System (ADS)

Chen, G.; Tien, C. L.; Wu, X.; Smith, J. S.

1994-05-01

This work develops a new measurement technique that determines the thermal diffusivity of thin films in both parallel and perpendicular directions, and presents experimental results on the thermal diffusivity of GaAs/AlGaAs-based thin-film structures. In the experiment, a modulated laser source heats up the sample and a fast-response temperature sensor patterned directly on the sample picks up the thermal response. From the phase delay between the heating source and the temperature sensor, the thermal diffusivity in either the parallel or perpendicular direction is obtained depending on the experimental configuration. The experiment is performed on a molecular-beam-epitaxy grown vertical-cavity surface-emitting laser (VCSEL) structure. The substrates of the samples are etched away to eliminate the effects of the interface between the film and the substrate. The results show that the thermal diffusivity of the VCSEL structure is 5-7 times smaller than that of its corresponding bulk media. The experiments also provide evidence on the anisotropy of thermal diffusivity caused solely by the effects of interfaces and boundaries of thin films.

Reliability and commercialization of oxidized VCSEL

NASA Astrophysics Data System (ADS)

Li, Alice; Pan, Jin-Shan; Lai, Horng-Ching; Lee, Bor-Lin; Wu, Jack; Lin, Yung-Sen; Huo, Tai-Chan; Wu, Calvin; Huang, Kai-Feng

2003-06-01

The reliability of oxidized VCSEL has similar result to implanted VCSEL. This paper presents our work on reliability data of oxidized VCSEL device and also the comparison with implanted VCSEL. The MTTF of oxidized VCSEL is 2.73 x 106 hrs at 55°C, 6 mA and failure rate ~ 1 FITs for the first 2 years operation. The reliability data of oxidized VCSEL includes activation energy, MTTF (mean-time-to failure), failure rate prediction, and 85°C / 85% humidity test will be presented below. Commercialization of oxidized VCSEL is demonstrated such as VCSEL structure, manufacturing facility, and packaging. A cost effective approach is key to its success in applications such as Datacomm.

Principles of VCSEL designing

NASA Astrophysics Data System (ADS)

Nakwaski, W.

2008-03-01

Comprehensive computer simulations are currently the most efficient and cheap methods in designing and optimisation of semiconductor device structures. Seemingly they should be as exact as possible, but in practice it is well known that the most exact approaches are also the most involved and the most time-consuming ones and need powerful computers. In some cases, cheaper somewhat simplified modelling simulations are sufficiently accurate. Therefore, an appropriate modelling approach should be chosen taking into account a compromise between our needs and our possibilities. Modelling of operation and designing of structures of vertical-cavity surface-emitting diode lasers (VCSELs) requires appropriate mathematical description of physical processes crucial for devices operation, i.e., various optical, electrical, thermal, recombination and sometimes also mechanical phenomena taking place within their volumes. Equally important are mutual interactions between above individual processes, usually strongly non-linear and creating a real network of various inter-relations. Chain is as strong as its weakest link. Analogously, model is as exact as its less exact part. Therefore it is useless to improve exactness of its more accurate parts and not to care about less exact ones. All model parts should exhibit similar accuracy. In any individual case, a reasonable compromise should be reached between high modelling fidelity and its practical convenience depending on a main modelling goal, importance and urgency of expected results, available equipment and also financial possibilities. In the present paper, some simplifications used in VCSEL modelling are discussed and their impact on exactness of VCSEL designing is analysed.

Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-10-01

We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be <1 nm to minimize scattering losses in VCSELs. Motivated by this requirement, we investigated the surface morphology and optoelectronic properties of electron-beam (e-beam) evaporated ITO films, as a function of substrate temperature and oxygen flow and pressure. The transparency and conductivity were seen to increase with increasing temperature. Decreasing the oxygen flow and pressure resulted in an increase in the transparency and resistivity. Neither the temperature, nor oxygen flow and pressure series on single-layer ITO films resulted in highly transparent and conductive films with <1 nm RMS roughness. To achieve <1 nm RMS roughness with good optoelectronic properties, a multi-layer ITO film was developed, utilizing a two-step temperature scheme. The optimized multi-layer ITO films had an RMS roughness of <1 nm, along with a high transparency (˜90% at 405 nm) and low resistivity (˜2 × 10-4 Ω-cm). This multi-layer ITO e-beam deposition technique is expected to prevent p-GaN plasma damage, typically observed in sputtered ITO films on p-GaN, while simultaneously reducing the threshold current density and increasing the differential efficiency of III-nitride VCSELs.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

High Luminescence Efficiency from GaAsN Layers Grown by MBE with RF Nitrogen Plasma Source

DTIC Science & Technology

2002-01-01

is the goal for applications in fiber optic communication systems. 1.3 micron edge- emitting lasers and VCSELs have been recently demonstrated by...GaAsN layers. CONCLUSIONS Molecular beam epitaxial growth of GaAsj_,N, layers has been studied as a function of nitrogen content and growth regimes. We...obtained are important for further improving the characteristics of InGaAsN lasers emitting at 1.3 micron. INTRODUCTION Group-Ill nitride semiconductors

Evaluation of laser speckle contrast imaging as an intrinsic method to monitor blood brain barrier integrity

PubMed Central

Dufour, Suzie; Atchia, Yaaseen; Gad, Raanan; Ringuette, Dene; Sigal, Iliya; Levi, Ofer

2013-01-01

The integrity of the blood brain barrier (BBB) can contribute to the development of many brain disorders. We evaluate laser speckle contrast imaging (LSCI) as an intrinsic modality for monitoring BBB disruptions through simultaneous fluorescence and LSCI with vertical cavity surface emitting lasers (VCSELs). We demonstrated that drug-induced BBB opening was associated with a relative change of the arterial and venous blood velocities. Cross-sectional flow velocity ratio (veins/arteries) decreased significantly in rats treated with BBB-opening drugs, ≤0.81 of initial values. PMID:24156049

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Matrix laser IR-visible image converter

NASA Astrophysics Data System (ADS)

Lipatov, N. I.; Biryukov, A. S.

2006-04-01

A new type of a focal matrix IR-visible image converter is proposed. The pixel IR detectors of the matrix are tunable microcavities of VCSEL (vertical-cavity surface emitting laser) semiconductor microstructures. The image conversion is performed due to the displacements of highly reflecting cavity mirrors caused by thermoelastic stresses in their microsuspensions appearing upon absorption of IR radiation. Analysis of the possibilities of the converter shows that its sensitivity is 10-3-10-2 K and the time response is 10-4-10-3 s. These characteristics determine the practical application of the converter.

Multi-scale reflection modulator-based optical interconnects

NASA Astrophysics Data System (ADS)

Nair, Rohit

This dissertation describes the design, analysis, and experimental validation of micro- and macro-optical components for implementing optical interconnects at multiple scales for varied applications. Three distance scales are explored: millimeter, centimeter, and meter-scales. At the millimeter-scale, we propose the use of optical interconnects at the intra-chip level. With the rapid scaling down of CMOS critical dimensions in accordance to Moore's law, the bandwidth requirements of global interconnects in microprocessors has exceeded the capabilities of metal links. These are the wires that connect the most remote parts of the chip and are disproportionately problematic in terms of chip area and power consumption. Consequently, in the mid-2000s, we saw a shift in the chip architecture: a move towards multicore designs. However, this only delays the inevitable communication bottleneck between cores. To satisfy this bandwidth, we propose to replace the global metal interconnects with optical interconnects. We propose to use the hybrid integration of silicon with GaAs/AlAs-based multiple quantum well devices as optical modulators and photodetectors along with polymeric waveguides to transport the light. We use grayscale lithography to fabricate curved facets into the waveguides to couple light into the modulators and photodetectors. Next, at the chip-to-chip level in high-performance multiprocessor computing systems, communication distances vary from a few centimeters to tens of centimeters. An optical design for coupling light from off-chip lasers to on-chip surface-normal modulators is proposed in order to implement chip-to-chip free-space optical interconnects. The method uses a dual-prism module constructed from prisms made of two different glasses. The various alignment tolerances of the proposed system are investigated and found to be well within pick-and-place accuracies. For the off-chip lasers, vertical cavity surface emitting lasers (VCSELs) are proposed. The rationale behind using on-chip modulators rather than VCSELs is to avoid VCSEL thermal loads on chip, and because of higher reliability of modulators than VCSELs. Particularly above 10Gbps, an empirical model developed shows the rapid decrease of VCSEL median time to failure vs. data rate. Thus the proposed interconnect scheme which utilizes continuous wave VCSELs that are externally modulated by on-chip multiple quantum well modulators is applicable for chip-to-chip optical interconnects at 20Gbps and higher line data rates. Finally, for applications such as remote telemetry, where the interrogation distances can vary from a few meters to tens or even hundreds of meters we demonstrate a modulated retroreflector that utilizes InGaAs/InAlAs-based large-area multiple quantum well modulators on all three faces of a retroreflector. The large-area devices, fabricated by metalorganic chemical vapor deposition, are characterized in terms of the yield and leakage currents. A yield higher than that achieved previously using devices fabricated by molecular beam epitaxy is observed. The retroreflector module is constructed using standard FR4 printed circuit boards, thereby simplifying the wiring issue. A high optical contrast ratio of 8.23dB is observed for a drive of 20V. A free-standing PCB retroreflector is explored and found to have insufficient angular tolerances (+/-0.5 degrees). We show that the angular errors in the corner-cube construction can be corrected for using off-the-shelf optical components as opposed to mounting the PCBs on a precision corner cube, as has been done previously.

Intra-Chip Free-Space Optical Interconnect: System, Device, Integration and Prototyping

NASA Astrophysics Data System (ADS)

Ciftcioglu, Berkehan

Currently, on-chip optical interconnect schemes already proposed utilize circuit switching using wavelength division multiplexing (WDM) or all-optical packet switching, all based on planar optical waveguides and related photonic devices such as microrings. These proposed approaches pose significant challenges in latency, energy efficiency, integration, and scalability. This thesis presents a new alternative approach by utilizing free-space optics. This 3-D integrated intra-chip free-space optical interconnect (FSOI) leverages mature photonic devices such as integrated lasers, photodiodes, microlenses and mirrors. It takes full advantages of the latest developments in 3-D integration technologies. This interconnect system provides point-to-point free-space optical links between any two communication nodes to construct an all-to-all intra-chip communication network with little or no arbitration. Therefore, it has significant networking advantages over conventional electrical and waveguide-based optical interconnects. An FSOI system is evaluated based on the real device parameters, predictive technology models and International Roadmap of Semiconductor's predictions. A single FSOI link achieves 10-Gbps data rate with 0.5-pJ/bit energy efficiency and less than 10--12 bit-error-rate (BER). A system using this individual link can provide scalability up to 36 nodes, providing 10-Tbps aggregate bandwidth. A comparison analysis performed between a WDM-based waveguide interconnect system and the proposed FSOI system shows that FSOI achieves better energy efficiency than the WDM one as the technology scales. Similarly, network simulation on a 16-core microprocessor using the proposed FSOI system instead of mesh networks has been shown to speed up the system by 12% and reduce the energy consumption by 33%. As a part of the development of a 3-D integrated FSOI system, operating at 850 nm with a 10-Gbps data rate per optical link, the photonics devices and optical components are individually designed and fabricated. The photodiodes (PDs) are designed to have large area for efficient light coupling and low capacitance to achieve large bandwidth, while achieving reasonably high responsivity. A metal-semiconductor-metal (MSM) structure is chosen over p-i-n ones to reduce parasitic capacitance per area, to allow less stringent microlens-to-PD alignment for efficient light coupling with a large bandwidth. A novel MSM germanium PD is implemented using an amorphous silicon (a-Si) layer on top of the undoped germanium substrate, serving as a barrier enhancement layer, mitigating the low Schottky barrier height for holes due to fermi level pinning and a surface passivation layer, preventing charge accumulation and image force lowering of the barrier. Therefore, the dark current is reduced and low-frequency gain is eliminated. The PDs achieve a 13-GHz bandwidth with a 0.315-A/W responsivity and a 1.7-nAmum² dark current density. The microlenses are fabricated on a fused silica substrate based on the photoresist melt-and-reflow technique, followed by dry etching into fused silica substrate. The measured focal length of a 220-mum aperture size microlens is 350-mum away from the backside of the substrate. The vertical-cavity surface-emitting lasers (VCSELs) are fabricated on a commercial molecular beam epitaxially (MBE) grown GaAs wafer. The fabricated 8-mum aperture size VCSEL can achieve 0.65-mW optical power at a 1.5-mA forward bias current with a threshold current of 0.48 mA and a 0.67-A/W slope efficiency. Three prototypes are implemented via integrating the individually fabricated components using non-conductive epoxy and wirebonding. The first prototype, built on a printed circuit board (PCB) using commercial VCSEL arrays, achieves a 5-dB transmission loss and less than -30-dB crosstalk at 1-cm distance with a small-signal bandwidth of 10 GHz, limited by the VCSEL. The second board-level prototype uses all fabricated components integrated on a PCB. The prototype achieves a 9-dB transmission loss at 3-cm distance and a 4.4-GHz bandwidth. The chip-level prototype is built on a germanium carrier with integrated MSM Ge PDs, microlenses on fused silica and VCSEL chip on GaAs substrates. The prototype achieves 4-dB transmission loss at 1 cm and 3.3-GHz bandwidth, limited by commercial VCSEL bandwidth. (Abstract shortened by UMI.)

An optically passive method that doubles the rate of 2-Ghz timing fiducials

NASA Astrophysics Data System (ADS)

Boni, R.; Kendrick, J.; Sorce, C.

2017-08-01

Solid-state optical comb-pulse generators provide a convenient and accurate method to include timing fiducials in a streak camera image for time base correction. Commercially available vertical-cavity surface-emitting lasers (VCSEL's) emitting in the visible currently in use can be modulated up to 2 GHz. An optically passive method is presented to interleave a time-delayed path of the 2-GHz comb with itself, producing a 4-GHz comb. This technique can be applied to VCSEL's with higher modulation rates. A fiber-delivered, randomly polarized 2-GHz VCSEL comb is polarization split into s-polarization and p-polarization paths. One path is time delayed relative to the other by twice the 2-GHz rate with +/-1-ps accuracy; the two paths then recombine at the fiber-coupled output. High throughput (>=90%) is achieved by carefully using polarization beam-splitting cubes, a total internal reflection beam-path-steering prism, and antireflection coatings. The glass path-length delay block and turning prism are optically contacted together. The beam polarizer cubes that split and recombine the paths are precision aligned and permanently cemented into place. We expect the palm-sized, inline fiber-coupled, comb-rate-doubling device to maintain its internal alignment indefinitely.

Biwavelength transceiver module for parallel simultaneous bidirectional optical interconnections

NASA Astrophysics Data System (ADS)

Nguyen, Nga T. H.; Ukaegbu, Ikechi A.; Sangirov, Jamshid; Cho, Mu-Hee; Lee, Tae-Woo; Park, Hyo-Hoon

2013-12-01

The design of a biwavelength transceiver (TRx) module for parallel simultaneous bidirectional optical interconnects is described. The TRx module has been implemented using two different wavelengths, 850 and 1060 nm, to send and receive signals simultaneously through a common optical interface while optimizing cost and performance. Filtering mirrors are formed in the optical fibers which are embedded on a V-grooved silicon substrate for reflecting and filtering optical signals from/to vertical-cavity surface-emitting laser (VCSEL)/photodiode (PD). The VCSEL and PD are flip-chip bonded on individual silicon optical benches, which are attached on the silicon substrate for optical signal coupling from the VCSEL to fiber and from fiber to the PD. A high-speed and low-loss ceramic printed circuit board, which has a compact size of 0.033 cc, has been designed to carry transmitter and receiver chips for easy packaging of the TRx module. Applied for quad small form-factor pluggable applications at 40-Gbps operation, the four-channel biwavelength TRx module showed clear eye diagrams with a bit error rate (BER) of 10-12 at input powers of -5 and -5.8 dBm for 1060 and 850 nm operation modes, respectively.

Highly accurate pulse-per-second timing distribution over optical fibre network using VCSEL side-mode injection

NASA Astrophysics Data System (ADS)

Wassin, Shukree; Isoe, George M.; Gamatham, Romeo R. G.; Leitch, Andrew W. R.; Gibbon, Tim B.

2017-01-01

Precise and accurate timing signals distributed between a centralized location and several end-users are widely used in both metro-access and speciality networks for Coordinated Universal Time (UTC), GPS satellite systems, banking, very long baseline interferometry and science projects such as SKA radio telescope. Such systems utilize time and frequency technology to ensure phase coherence among data signals distributed across an optical fibre network. For accurate timing requirements, precise time intervals should be measured between successive pulses. In this paper we describe a novel, all optical method for quantifying one-way propagation times and phase perturbations in the fibre length, using pulse-persecond (PPS) signals. The approach utilizes side mode injection of a 1550nm 10Gbps vertical cavity surface emitting laser (VCSEL) at the remote end. A 125 μs one-way time of flight was accurately measured for 25 km G655 fibre. Since the approach is all-optical, it avoids measurement inaccuracies introduced by electro-optical conversion phase delays. Furthermore, the implementation uses cost effective VCSEL technology and suited to a flexible range of network architectures, supporting a number of end-users conducting measurements at the remote end.

High Bandwidth-Efficiency Resonant Cavity Enhanced Schottky Photodiodes for 800-850 nm Wavelength Operation

DTIC Science & Technology

1998-05-25

at least 50 nm wide centered around 830 nm wavelength. The layers are grown by molecular beam epitaxy on a semi- insulating GaAs substrate. The...limited by the material properties. With the advent of GaAs vertical-cavity surface-emitting lasers ~ VCSEL !,2 the 800–850 nm wavelength range has recently

Calibration and Field Deployment of the NSF G-V VCSEL Hygrometer

NASA Astrophysics Data System (ADS)

DiGangi, J. P.; O'Brien, A.; Diao, M.; Hamm, C.; Zhang, Q.; Beaton, S. P.; Zondlo, M. A.

2012-12-01

Cloud formation and dynamics have a significant influence on the Earth's radiative forcing budget, which illustrates the importance of clouds with respect to global climate. Therefore, an accurate understanding of the microscale processes dictating cloud formation is crucial for accurate computer modeling of global climate change. A critical tool for understanding these processes from an airborne platform is an instrument capable of measuring water vapor with both high accuracy and time, thus spatial, resolution. Our work focuses on an open-path, compact, vertical-cavity surface-emitting laser (VCSEL) absorption-based hygrometer, capable of 25 Hz temporal resolution, deployed on the NSF/NCAR Gulfstream-V aircraft platform. The open path nature of our instrument also helps to minimize sampling artifacts. We will discuss our efforts toward achieving within 5% accuracy over 5 orders of magnitude of water vapor concentrations. This involves an intercomparison of five independent calibration methods: ice surface saturators using an oil temperature bath, solvent slush baths (e.g. chloroform/LN2, water/ice), a research-grade frost point hygrometer, static pressure experiments, and Pt catalyzed hydrogen gas. This wide variety of available tools allows us to accurately constrain the calibrant water vapor concentrations both before and after the VCSEL hygrometer sampling chamber. For example, the mixing ratio as measured by research-grade frost point hygrometer after the VCSEL hygrometer agreed within 2% of the mixing ration expected from the water/ice bubbler source before the VCSEL over the temperature range -50°C to 20°C. Finally, due to the compact nature of our instrument, we are able to perform these calibrations simultaneously at the same temperatures (-80°C to 30°C) and pressures (150 mbar to 760 mbar) as sampled ambient air during a flight. This higher accuracy can significantly influence the science utilizing this data, which we will illustrate using preliminary data from our most recent field deployment, the NSF Deep Convective Clouds and Chemistry Experiment in May-June 2012

Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor

PubMed Central

O’Sullivan, Thomas D.; Heitz, Roxana T.; Parashurama, Natesh; Barkin, David B.; Wooley, Bruce A.; Gambhir, Sanjiv S.; Harris, James S.; Levi, Ofer

2013-01-01

Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm3 and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant. PMID:24009996

In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures

NASA Astrophysics Data System (ADS)

Breiland, William G.; Hou, Hong Q.; Chui, Herman C.; Hammons, Burrel E.

1997-04-01

In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial metal organic chemical vapor deposition reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of reflection high-energy electron diffraction in molecular beam epitaxy as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than 1 h. Working VCSEL devices are obtained on the first try after calibration. Repeated runs have yielded ±0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 runs.

Electron-beam pumped laser structures based on MBE grown {ZnCdSe}/{ZnSe} superlattices

NASA Astrophysics Data System (ADS)

Kozlovsky, V. I.; Shcherbakov, E. A.; Dianov, E. M.; Krysa, A. B.; Nasibov, A. S.; Trubenko, P. A.

1996-02-01

Cathodoluminescence (CL), photoreflection (PR), phototransmission (PT) of single and multiquantum wells (MQWs) and strain layer {ZnCdSe}/{ZnSe} superlattices (SLs) grown by molecular beam epitaxy (MBE) were studied. An increase of the Stokes shift with the number of quantum wells (QWs) and the appearance of new lines in CL and PT spectra were observed. Room temperature (RT) vertical-cavity surface-emitting laser (VCSEL) operation was achieved by using the SL structures. Output power up to 2.2 W in single longitudinal mode with λ = 493 nm was obtained. Cut facet laser wavelength of the same SL structure was 502 nm.

InGaAs focal plane arrays for low-light-level SWIR imaging

NASA Astrophysics Data System (ADS)

MacDougal, Michael; Hood, Andrew; Geske, Jon; Wang, Jim; Patel, Falgun; Follman, David; Manzo, Juan; Getty, Jonathan

2011-06-01

Aerius Photonics will present their latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. Aerius will present imaging in both 1280x1024 and 640x512 formats. Aerius will present characterization of the FPA including dark current measurements. Aerius will also show the results of development of SWIR FPAs for high temperaures, including imagery and dark current data. Finally, Aerius will show results of using the SWIR camera with Aerius' SWIR illuminators using VCSEL technology.

Misalignment corrections in optical interconnects

NASA Astrophysics Data System (ADS)

Song, Deqiang

Optical interconnects are considered a promising solution for long distance and high bitrate data transmissions, outperforming electrical interconnects in terms of loss and dispersion. Due to the bandwidth and distance advantage of optical interconnects, longer links have been implemented with optics. Recent studies show that optical interconnects have clear advantages even at very short distances---intra system interconnects. The biggest challenge for such optical interconnects is the alignment tolerance. Many free space optical components require very precise assembly and installation, and therefore the overall cost could be increased. This thesis studied the misalignment tolerance and possible alignment correction solutions for optical interconnects at backplane or board level. First the alignment tolerance for free space couplers was simulated and the result indicated the most critical alignments occur between the VCSEL, waveguide and microlens arrays. An in-situ microlens array fabrication method was designed and experimentally demonstrated, with no observable misalignment with the waveguide array. At the receiver side, conical lens arrays were proposed to replace simple microlens arrays for a larger angular alignment tolerance. Multilayer simulation models in CodeV were built to optimized the refractive index and shape profiles of the conical lens arrays. Conical lenses fabricated with micro injection molding machine and fiber etching were characterized. Active component VCSOA was used to correct misalignment in optical connectors between the board and backplane. The alignment correction capability were characterized for both DC and AC (1GHz) optical signal. The speed and bandwidth of the VCSOA was measured and compared with a same structure VCSEL. Based on the optical inverter being studied in our lab, an all-optical flip-flop was demonstrated using a pair of VCSOAs. This memory cell with random access ability can store one bit optical signal with set or reset beam. The operating conditions were studied to generate two stable states between the VCSOA pair. The entire functionality test was implemented with free space optical components.

Single-Mode VCSELs

NASA Astrophysics Data System (ADS)

Larsson, Anders; Gustavsson, Johan S.

The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for single-mode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified.

VCSEL based Faraday rotation spectroscopy at 762nm for battery powered trace molecular oxygen detection

NASA Astrophysics Data System (ADS)

So, Stephen; Wysocki, Gerard

2010-02-01

Faraday Rotation Spectroscopy (FRS) is a polarization based spectroscopic technique which can provide higher sensitivity concentration measurements of paramagnetic gases and free radicals than direct absorption spectroscopic techniques. We have developed sensor systems which require only 0.2W to perform TDLAS (tunable diode laser absorption spectroscopy), and can additionally be quickly duty cycled, enabling operation in wireless sensor networks of laser-based trace gas sensors We adapted our integrated TDLAS electronics to perform FRS in a compact and more sensitive system for quantification of molecular oxygen (O2) using a 762.3nm VCSEL in the A band. Using an AC magnetic field, we demonstrate detector noise dominated performance, achieving 2.1×10-6/Hz1/2 equivalent detectable fractional absorption and a minimum detection limit of 462 ppmv O2 in 1 second in a 15cm path. At longer paths and integration times, such a sensor will enable oxygen measurements at biotic respiration levels (<1ppmv) to measure CO2 - O2 exchange for mapping natural exchange of greenhouse gases. Potential improvement of detection limits by increasing various system performance parameters is described.

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

High power VCSEL devices for atomic clock applications

NASA Astrophysics Data System (ADS)

Watkins, L. S.; Ghosh, C.; Seurin, J.-F.; Zhou, D.; Xu, G.; Xu, B.; Miglo, A.

2015-09-01

We are developing VCSEL technology producing >100mW in single frequency at wavelengths 780nm, 795nm and 850nm. Small aperture VCSELs with few mW output have found major applications in atomic clock experiments. Using an external cavity three-mirror configuration we have been able to operate larger aperture VCSELs and obtain >70mW power in single frequency operation. The VCSEL has been mounted in a fiber pigtailed package with the external mirror mounted on a shear piezo. The package incorporates a miniature Rb cell locker to lock the VCSEL wavelength. This VCSEL operates in single frequency and is tuned by a combination of piezo actuator, temperature and current. Mode-hop free tuning over >30GHz frequency span is obtained. The VCSEL has been locked to the Rb D2 line and feedback control used to obtain line-widths of <100kHz.

Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission

NASA Astrophysics Data System (ADS)

Genty, Frédéric; Almuneau, Guilhem; Chusseau, Laurent; Wilk, Arnaud; Gaillard, Serge; Boissier, Guilhem; Grech, Pierre; Jacquet, Joel

1999-05-01

With the aim of fabricating vertical cavity semiconductor lasers (VCSEL), the molecular beam epitaxy growth of GaAsSb using two different element-V precursor sets has been first evaluated. Alloy compositions as well as ease of achieving lattice-matching are compared with both (As 2-Sb 4) or (As 2-Sb 2). Change in the growth mode process that depends on the precursor couple is presumed to influence strongly As and Sb incorporation rates thereby causing difficulties in reaching lattice-matching with Sb 4. The above study has allowed the fabrication of a fully doped 3 λ/2 monolithic Sb-based VCSEL on InP. The main devices performing at 77 K are a 200 nm wide stopband centered at 1.5 μm and a clear cavity resonance at 1.53 μm from which electroluminescence has been observed.

Ultra-low loss fully-etched grating couplers for perfectly vertical coupling compatible with DUV lithography tools

NASA Astrophysics Data System (ADS)

Dabos, G.; Pleros, N.; Tsiokos, D.

2016-03-01

Hybrid integration of VCSELs onto silicon-on-insulator (SOI) substrates has emerged as an attractive approach for bridging the gap between cost-effective and energy-efficient directly modulated laser sources and silicon-based PICs by leveraging flip-chip (FC) bonding techniques and silicon grating couplers (GCs). In this context, silicon GCs, should comply with the process requirements imposed by the complimentary-metal-oxide-semiconductor manufacturing tools addressing in parallel the challenges originating from the perfectly vertical incidence. Firstly, fully etched GCs compatible with deep-ultraviolet lithography tools offering high coupling efficiencies are imperatively needed to maintain low fabrication cost. Secondly, GC's tolerance to VCSEL bonding misalignment errors is a prerequisite for practical deployment. Finally, a major challenge originating from the perfectly vertical coupling scheme is the minimization of the direct back-reflection to the VCSEL's outgoing facet which may destabilize its operation. Motivated from the above challenges, we used numerical simulation tools to design an ultra-low loss, bidirectional VCSEL-to-SOI optical coupling scheme for either TE or TM polarization, based on low-cost fully etched GCs with a Si-layer of 340 nm without employing bottom reflectors or optimizing the buried-oxide layer. Comprehensive 2D Finite-Difference-Time- Domain simulations have been performed. The reported GC layout remains fully compatible with the back-end-of-line (BEOL) stack associated with the 3D integration technology exploiting all the inter-metal-dielectric (IMD) layers of the CMOS fab. Simulation results predicted for the first time in fully etched structures a coupling efficiency of as low as -0.87 dB at 1548 nm and -1.47 dB at 1560 nm with a minimum direct back-reflection of -27.4 dB and -14.2 dB for TE and TM polarization, respectively.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Biosensors based on Si3N4 asymmetric Mach-Zehnder interferometers

NASA Astrophysics Data System (ADS)

Chalyan, Tatevik; Pasquardini, Laura; Falke, Floris; Zanetti, Manuela; Guider, Romain; Gandolfi, Davide; Schreuder, Eric; Pederzolli, Cecilia; Heideman, René G.; Pavesi, Lorenzo

2016-04-01

In this work, we present a study on photonic biosensors based on Si3N4 asymmetric Mach-Zehnder Interferometers (aMZI) for Aflatoxin M1 (AFM1) detection. AFM1 is an hepatotoxic and a carcinogenic toxin present in milk. The biosensor is based on an array of four Si3N4 aMZI that are optimized for 850nm wavelength. We measure the bulk Sensitivity (S) and the Limit of Detection (LOD) of our devices. In the array, three devices are exposed and have very similar sensitivities. The fourth aMZI, which is covered by SiO2, is used as an internal reference for laser (a VCSEL) and temperature fluctuations. We measured a phase sensitivity of 14300+/-400 rad/RIU. To characterize the LOD of the sensors, we measure the uncertainty of the experimental readout system. From the measurements on three aMZI, we observe the same value of LOD, which is ≍ 4.5×10-7 RIU. After the sensor characterization on homogeneous sensing, we test the surface sensing performances by flowing specific Aflatoxin M1 and non-specific Ochratoxin in 50 mM MES pH 6.6 buffer on the top of the sensors functionalized with Antigen-Recognising Fragments (Fab'). The difference between specific and non-specific signals shows the specificity of our sensors. A moderate regeneration of the sensors is obtained by using glycine solution.

Transverse junction vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Schaus, C. F.; Torres, A. J.; Cheng, Julian; Sun, S.; Hains, C.

1991-04-01

An all-epitaxial, transverse-junction GaAs/AlGaAs vertical-cavity surface-emitting laser (TJ-VCSEL) incorporating wavelength-resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p(+)-p-n(+) transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room-temperature threshold of 48 mA (pulsed) and a resolution-limited spectral width of 0.11 nm at an 855.8-nm lasing wavelength.

A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications

DOE PAGES

Zhang, T.; Tavernier, F.; Moreira, P.; ...

2015-02-19

The GigaBit Laser Driver (GBLD) is a key on-detector component of the GigaBit Transceiver (GBT) system at the transmitter side. We have developed a 10 Gb/s GBLD (GBLD10) in a 130 nm CMOS technology, as part of the design efforts towards the upgrade of the electrical components of the LHC experiments. The GBLD10 is based on the distributed-amplifier (DA) architecture and achieves data rates up to 10 Gb/s. It is capable of driving VCSELs with modulation currents up to 12 mA. Furthermore, a pre-emphasis function has been included in the proposed laser driver in order to compensate for the capacitivemore » load and channel losses.« less

Scanned-wavelength diode laser sensors for harsh environments

NASA Astrophysics Data System (ADS)

Jeffries, Jay B.; Sanders, Scott T.; Zhou, Xin; Ma, Lin; Mattison, Daniel W.; Hanson, Ronald K.

2002-09-01

Diode laser absorption offers the possibility of high-speed, robust, and rugged sensors for a wide variety of practical applications. Pressure broadening complicates absorption measurements of gas temperature and species concentrations in high-pressure, high-temperature practical environments. More agile wavelength scanning can enable measurements of temperature and species concentrations in flames and engines as demonstrated by example measurements using wavelength scanning of a single DFB in laboratory flames or a vertical cavity surface emitting laser (VCSEL) in a pulse detonation engine environment. Although the blending of multiple transitions by pressure broadening complicates the atmospheric pressure spectrum of C2H4 fuel, a scanned wavelength strategy enables quantitative measurement of fuel/oxidizer stoichiometry. Wavelength-agile scanning techniques enable high-speed measurements in these harsh environments.

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

NASA Astrophysics Data System (ADS)

Perez, J.-P.; Laurain, A.; Cerutti, L.; Sagnes, I.; Garnache, A.

2010-04-01

In this paper, for the first time to our knowledge, we report and demonstrate the technological steps dedicated to thermal management of antimonide-based surface emitting laser devices grown by molecular beam epitaxy. Key points of the technological process are firstly the bonding of the structure on the SiC host substrate and secondly the GaSb substrate removal to leave the Sb-based membrane. The structure design (etch stop layer, metallic mirror, etc), bonding process (metallic bonding via solid-liquid interdiffusion) and GaSb substrate removal process (selective wet-chemical etchants, etc) are presented. Optical characterizations together with external-cavity VCSEL laser emission at 2.3 µm at room temperature in continuous wave are presented.

Parallel interconnect for a novel system approach to short distance high information transfer data links

NASA Astrophysics Data System (ADS)

Raskin, Glenn; Lebby, Michael S.; Carney, F.; Kazakia, M.; Schwartz, Daniel B.; Gaw, Craig A.

1997-04-01

The OPTOBUSTM family of products provides for high performance parallel interconnection utilizing optical links in a 10-bit wide bi-directional configuration. The link is architected to be 'transparent' in that it is totally asynchronous and dc coupled so that it can be treated as a perfect cable with extremely low skew and no losses. An optical link consists of two identical transceiver modules and a pair of connectorized 62.5 micrometer multi mode fiber ribbon cables. The OPTOBUSTM I link provides bi- directional functionality at 4 Gbps (400 Mbps per channel), while the OPTOBUSTM II link will offer the same capability at 8 Gbps (800 Mbps per channel). The transparent structure of the OPTOBUSTM links allow for an arbitrary data stream regardless of its structure. Both the OPTOBUSTM I and OPTOBUSTM II transceiver modules are packaged as partially populated 14 by 14 pin grid arrays (PGA) with optical receptacles on one side of the module. The modules themselves are composed of several elements; including passives, integrated circuits optoelectronic devices and optical interface units (OIUs) (which consist of polymer waveguides and a specially designed lead frame). The initial offering of the modules electrical interface utilizes differential CML. The CML line driver sinks 5 mA of current into one of two pins. When terminated with 50 ohm pull-up resistors tied to a voltage between VCC and VCC-2, the result is a differential swing of plus or minus 250 mV, capable of driving standard PECL I/Os. Future offerings of the OPTOBUSTM links will incorporate LVDS and PECL interfaces as well as CML. The integrated circuits are silicon based. For OPTOBUSTM I links, a 1.5 micrometer drawn emitter NPN bipolar process is used for the receiver and an enhanced 0.8 micrometer CMOS process for the laser driver. For OPTOBUSTM II links, a 0.8 micrometer drawn emitter NPN bipolar process is used for the receiver and the driver IC utilizes 0.8 micrometer BiCMOS technology. The OPTOBUSTM architecture uses AlGaAs vertical cavity surface emitting lasers (VCSELs) at 850 nm in conjunction with unique opto-electronic packaging concepts. Most laser based transmitter subsystems are incapable of carrying an arbitrary NRZ data stream at high data rates. The receiver subsystem utilizes a conventional GaAs PIN photo-detector. In parallel interconnect systems. The design must take into account the simultaneous switching noise from the neighboring systems. If not well controlled, the high density of the multiple interconnects can limit the sensitivity and therefore the performance of the system. The packaging approach of the VCSEL and PIN arrays allow for high bandwidths and provide the coupling mechanisms necessary to interface to the 62.5 micrometer multi mode fiber. To allow for extremely high electrical signals the OPTOBUSTM package utilizes a multilayer tape automated bonded (TAB) lead frame. The lead frame contains separate signal and ground layers. The ground layer successfully provides for a pseudo-coaxial environment (low inductance and effective signal coupling to the ground plane).

Laser optomechanics

NASA Astrophysics Data System (ADS)

Yang, Weijian; Adair Gerke, Stephen; Wei Ng, Kar; Rao, Yi; Chase, Christopher; Chang-Hasnain, Connie J.

2015-09-01

Cavity optomechanics explores the interaction between optical field and mechanical motion. So far, this interaction has relied on the detuning between a passive optical resonator and an external pump laser. Here, we report a new scheme with mutual coupling between a mechanical oscillator supporting the mirror of a laser and the optical field generated by the laser itself. The optically active cavity greatly enhances the light-matter energy transfer. In this work, we use an electrically-pumped vertical-cavity surface-emitting laser (VCSEL) with an ultra-light-weight (130 pg) high-contrast-grating (HCG) mirror, whose reflectivity spectrum is designed to facilitate strong optomechanical coupling, to demonstrate optomechanically-induced regenerative oscillation of the laser optomechanical cavity. We observe >550 nm self-oscillation amplitude of the micromechanical oscillator, two to three orders of magnitude larger than typical, and correspondingly a 23 nm laser wavelength sweep. In addition to its immediate applications as a high-speed wavelength-swept source, this scheme also offers a new approach for integrated on-chip sensors.

Optical glucose monitoring using vertical cavity surface emitting lasers (VCSELs)

NASA Astrophysics Data System (ADS)

Talebi Fard, Sahba; Hofmann, Werner; Talebi Fard, Pouria; Kwok, Ezra; Amann, Markus-Christian; Chrostowski, Lukas

2009-08-01

Diabetes Mellitus is a common chronic disease that has become a public health issue. Continuous glucose monitoring improves patient health by stabilizing the glucose levels. Optical methods are one of the painless and promising methods that can be used for blood glucose predictions. However, having accuracies lower than what is acceptable clinically has been a major concern. Using lasers along with multivariate techniques such as Partial Least Square (PLS) can improve glucose predictions. This research involves investigations for developing a novel optical system for accurate glucose predictions, which leads to the development of a small, low power, implantable optical sensor for diabetes patients.

Quantum dots for GaAs-based surface emitting lasers at 1300 nm

NASA Astrophysics Data System (ADS)

Grundmann, M.; Ledentsov, N. N.; Hopfer, F.; Heinrichsdorff, F.; Guffarth, F.; Bimberg, D.; Ustinov, V. M.; Zhukov, A. E.; Kovsh, A. R.; Maximov, M. V.; Musikhin, Yu. G.; Alferov, Zh. I.; Lott, J. A.; Zhakharov, N. D.; Werner, P.

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported.

The Effects of Optical Feedback on Polarization of Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-12-01

Beam Mode TEMN Dichroic Beam Splitters (2) Manufacturer CVI Maximum Reflectance 375 mrn, 950 un Maximum Transmission 830 rnm, 910 mn Design Angle 5... beam splitter (DBS). The DBS reflects the majority of the light at the VCSEL wavelength (and passes most of the pump wavelength). A normal beamsplitter...degrees Beam Splitters Manufacturer Melles Griot Reflectancetrransnittance -50/50 Filters (2) Manufacturer Ealing Center Wavelength 880 urn, 940 mun

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting lasers ( VCSELs ) [1, 2, 3]. They are also being... molecular beam epitaxy ( MBE ) [5, 6] or metal organic chemical vapor deposition (MOCVD) [7, 8]. The MBE -grown A1GaAs layers are sometimes pseudo or digital...Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGal_xAs layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not

Opportunities to Enhance Multimode Fiber Links by Application of Overfilled Launch

NASA Astrophysics Data System (ADS)

Onlagic, Denis

2005-11-01

This paper investigates possibilities for the practical design of high-performance multimode fibers (MMFs) that can provide bandwidths in excess of 10 GHz ...km in an overfilled regime of operation. Analysis of standard MMF in an overfilled launch demonstrates that the theoretical bandwidth limitations arise from the influence of cladding on the propagation of the highest order modes. Practical MMF profile designs that overcome this problem are investigated. The standard 50-and 62.5- μm fiber profiles are redesigned first to allow for the performance in an overfilled launch with the differential mode delays (DMDs) below 0.055 and 0.250 ns/km, respectively. It is shown that such fibers can exhibit the same or better theoretical bandwidth in an overfilled launch when compared to standard fiber under restricted launch. Elimination of the need for the restricted mode launch in high-performance multimode transmission systems can improve reliability issues and can relax the range of tolerance requirements imposed on terminal equipment, optical components, and link installation. Furthermore, MMFs that can be operated in an overfilled launched are compatible with emerging vertical cavity surface emitting laser (VCSEL) wavelength division multiplexing (WDM) array technologies. A successfully controlled higher order mode DMD also allows for the reduction of MMF core size and mit Delta that can be beneficial for low-cost high-performance single-channel links. It is demonstrated that properly designed reduced core fibers can achieve theoretical DMDs in the range of 0.005-0.02 ns/km. The bend loss properties of redesigned fibers are investigated in detail, showing that the proposed modifications do not lead to significant degradation of bend loss performance. Moreover, they can be manufactured at considerably lower cost while utilizing commercially readily available low-cost VCSELs. Even where the theoretical limit is not achieved by practical fiber making, the reduced core size and mit Delta MMF can provide higher production yield, lower cost, and higher average bandwidth.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

Ultrafast Narrow Band Modulation of VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

2002-01-01

Multimode beating was greatly enhanced by taking output from part (e.g., half) of the output facet. Simpler sources of microwaves and millimeter waves of various frequencies were generated by varying the VCSEL diameter in a single multimode VCSEL our coupling of a few VCSELs. Breathing frequency in multi-mode operations affects modulation response and bandwidth. Optimizing RO frequency and mode beating frequency could potentially expand bandwidths suitable for wide band digital communications.

A plot twist: the continuing story of VCSELs at AOC

NASA Astrophysics Data System (ADS)

Guenter, James K.; Tatum, Jim A.; Hawthorne, Robert A., III; Johnson, Ralph H.; Mathes, David T.; Hawkins, Bobby M.

2005-03-01

During a year of substantial consolidation in the VCSEL industry, Honeywell sold their VCSEL Optical Products Division, which has now officially changed its name to Advanced Optical Components (AOC). Both manufacture and applied research continue, however. Some of the developments of the past year are discussed in this paper. They include advances in the understanding of VCSEL degradation physics, substantial improvements in long-wavelength VCSEL performance, and continuing progress in manufacturing technology. In addition, higher speed serial communications products, at 10 gigabits and particularly at 4 gigabits per second, have shown faster than predicted growth. We place these technologies and AOC's approach to them in a market perspective, along with other emerging applications.

Reliability and degradation of oxide VCSELs due to reaction to atmospheric water vapor

NASA Astrophysics Data System (ADS)

Dafinca, Alexandru; Weidberg, Anthony R.; McMahon, Steven J.; Grillo, Alexander A.; Farthouat, Philippe; Ziolkowski, Michael; Herrick, Robert W.

2013-03-01

850nm oxide-aperture VCSELs are susceptible to premature failure if operated while exposed to atmospheric water vapor, and not protected by hermetic packaging. The ATLAS detector in CERN's Large Hadron Collider (LHC) has had approximately 6000 channels of Parallel Optic VCSELs fielded under well-documented ambient conditions. Exact time-to-failure data has been collected on this large sample, providing for the first time actual failure data at use conditions. In addition, the same VCSELs were tested under a variety of accelerated conditions to allow us to construct a more accurate acceleration model. Failure analysis information will also be presented to show what we believe causes corrosion-related failure for such VCSELs.

Wavelength tunable MEMS VCSELs for OCT imaging

NASA Astrophysics Data System (ADS)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa; Semenova, Elizaveta; Hansen, Ole; Yvind, Kresten

2018-02-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.

Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Karachinsky, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Agustin, M.; Ledentsov, N. N.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.

2017-02-01

We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current < 2.5 mA and output optical power > 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value-reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)1/2. Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

50Gb/s PAM-4 oxide VCSEL development progress at Broadcom

NASA Astrophysics Data System (ADS)

Wang, Jingyi; Murty, M. V. Ramana; Wang, Charlie; Hui, David; Lehman Harren, Ann; Chang, Hsu-Hao; Feng, Zheng-Wen; Fanning, Thomas R.; Sridhara, Aaditya; Taslim, Sumitro-Joyo; Cai, Xinle; Chu, Jason; Giovane, Laura M.

2017-02-01

This paper will review the device design and performance of Broadcom's 50Gb/s PAM-4 VCSEL to enable the next generation of transceivers using a PAM-4 advanced modulation scheme at 25-28 GBd. The VCSEL has been optimized to minimize noise and improve dynamic performance for cleaner eyes. Preliminary wear out lifetime studies indicate that the time to 1% failure exceeds 10 years, making the VCSELs suitable for data communication applications.

Heterogeneously-integrated VCSEL using high-contrast grating on silicon

NASA Astrophysics Data System (ADS)

Ferrara, James; Zhu, Li; Yang, Weijian; Qiao, Pengfei; Chang-Hasnain, Connie J.

2015-02-01

We present a unique heterogeneous integration approach for VCSELs on silicon using eutectic bonding. An electrically pumped III-V - silicon heterogeneous VCSEL is demonstrated using a high-contrast grating (HCG) reflector on silicon. CW output power >1.5 mW, thermal resistance of 1.46 K/mW, and 5 Gb/s direct modulation is demonstrated. We also explore the possibility of an all-HCG VCSEL structure that would benefit from stronger thermal performance, larger tuning efficiency, and higher direct modulation speeds.

Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980 nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550 nm Cavity on the Top

PubMed Central

Islam, Samiha Ishrat; Islam, Arnob; Islam, Saiful

2014-01-01

In this work, an integrated single chip dual cavity VCSEL has been designed which comprises an electrically pumped 980 nm bottom VCSEL section fabricated using GaInAs/AlGaAs MQW active region and a 1550 nm top VCSEL section constructed using GaInAs/AlGaInAs MQW active region but optically pumped using half of the produced 980 nm light entering into it from the electrically pumped bottom cavity. In this design, the active region of the intracavity structure 980 nm VCSEL consists of 3 quantum wells (QWs) using Ga0.847In0.153As, 2 barriers using Al0.03Ga0.97As, and 2 separate confinement heterostructures (SCH) using the same material as the barrier. The active region of the top emitting 1550 nm VCSEL consists of 3 QWs using Ga0.47In0.52As, 2 barriers using Al0.3Ga0.17In0.53As, and 2 SCHs using the same material as the barrier. The top DBR and the bottom DBR mirror systems of the 1550 nm VCSEL section plus the top and bottom DBR mirror systems of the 980 nm VCSEL section have been formed using GaAs/Al0.8Ga0.2As. Computations show that the VCSEL is capable of producing 8.5 mW of power at 980 nm from the bottom side and 2 mW of power at the 1550 nm from top side. PMID:27379335

Higher speed VCSELs by photon lifetime reduction

NASA Astrophysics Data System (ADS)

Westbergh, Petter; Gustavsson, Johan S.; Kögel, Benjamin; Haglund, Åsa; Larsson, Anders; Joel, Andrew

2011-03-01

The impedance characteristics and the effects of photon lifetime reduction on the performance of high-speed 850 nm VCSELs are investigated. Through S11 measurements and equivalent circuit modeling we show that the parasitic mesa capacitance can be significantly reduced by using multiple oxide layers. By performing a shallow surface etch (25 - 55 nm) on the fabricated VCSELs, we are able to reduce the photon lifetime by up to 80% and thereby significantly improve both static and dynamic properties of the VCSELs. By optimizing the photon lifetime we are able to enhance the 3dB modulation bandwidth of 7 μm oxide aperture VCSELs from 15 GHz to 23 GHz and finally demonstrate errorfree transmission at up to 40 Gbit/s.

20-Gbps optical LiFi transport system.

PubMed

Ying, Cheng-Ling; Lu, Hai-Han; Li, Chung-Yi; Cheng, Chun-Jen; Peng, Peng-Chun; Ho, Wen-Jeng

2015-07-15

A 20-Gbps optical light-based WiFi (LiFi) transport system employing vertical-cavity surface-emitting laser (VCSEL) and external light injection technique with 16-quadrature amplitude modulation (QAM)-orthogonal frequency-division multiplexing (OFDM) modulating signal is proposed. Good bit error rate (BER) performance and clear constellation map are achieved in our proposed optical LiFi transport systems. An optical LiFi transport system, delivering 16-QAM-OFDM signal over a 6-m free-space link, with a data rate of 20 Gbps, is successfully demonstrated. Such a 20-Gbps optical LiFi transport system provides the advantage of a free-space communication link for high data rates, which can accelerate the visible laser light communication (VLLC) deployment.

A low-threshold high-index-contrast grating (HCG)-based organic VCSEL

NASA Astrophysics Data System (ADS)

Shayesteh, Mohammad Reza; Darvish, Ghafar; Ahmadi, Vahid

2015-12-01

We propose a low-threshold high-index-contrast grating (HCG)-based organic vertical-cavity surface-emitting laser (OVCSEL). The device has the feasibility to apply both electrical and optical excitation. The microcavity of the laser is a hybrid photonic crystal (HPC) in which the top distributed Bragg reflector (DBR) is replaced by a sub-wavelength high-contrast-grating layer, and provides a high-quality factor. The simulated quality factor of the microcavity is shown to be as high as 282,000. We also investigate the threshold behavior and the dynamics of the OVCSEL optically pumped with sub-picosecond pulses. Results from numerical simulation show that lasing threshold is 75 nJ/cm2.

Quantum Optoelectronics. Postconference Edition. Organization of the 1993 Photonics Science Topical Meetings Held in Palm Springs, California on March 17 - 19, 1993. Technical Digest Series, Volume 8

DTIC Science & Technology

1993-03-19

Experiments lasing thresholds in sub-half- noises and amplitude squeezing, R. F. Nabiev, E. L. Ginzton micron diameter microcavity VCSELs imply very low...phase noise characteristics of internal and output light of semiconductor laser with dispersive loss element inside the 9:00 am resonator is presented...subsequent emission events, resulting in a remarkable expansion of frequency range for the suppression of photon- number fluctuation noise beyond the inverse

Fibre Optic Connections And Method For Using Same

DOEpatents

Chan, Benson; Cohen, Mitchell S.; Fortier, Paul F.; Freitag, Ladd W.; Hall, Richard R.; Johnson, Glen W.; Lin, How Tzu; Sherman, John H.

2004-03-30

A package is described that couples a twelve channel wide fiber optic cable to a twelve channel Vertical Cavity Surface Emitting Laser (VCSEL) transmitter and a multiple channel Perpendicularly Aligned Integrated Die (PAID) receiver. The package allows for reduction in the height of the assembly package by vertically orienting certain dies parallel to the fiber optic cable and horizontally orienting certain other dies. The assembly allows the vertically oriented optoelectronic dies to be perpendicularly attached to the horizontally oriented laminate via a flexible circuit.

Polarization switching detection method using a ferroelectric liquid crystal for dichroic atomic vapor laser lock frequency stabilization techniques.

PubMed

Dudzik, Grzegorz; Rzepka, Janusz; Abramski, Krzysztof M

2015-04-01

We present a concept of the polarization switching detection method implemented for frequency-stabilized lasers, called the polarization switching dichroic atomic vapor laser lock (PSDAVLL) technique. It is a combination of the well-known dichroic atomic vapor laser lock method for laser frequency stabilization with a synchronous detection system based on the surface-stabilized ferroelectric liquid crystal (SSFLC).The SSFLC is a polarization switch and quarter wave-plate component. This technique provides a 9.6 dB better dynamic range ratio (DNR) than the well-known two-photodiode detection configuration known as the balanced polarimeter. This paper describes the proposed method used practically in the VCSEL laser frequency stabilization system. The applied PSDAVLL method has allowed us to obtain a frequency stability of 2.7×10⁻⁹ and a reproducibility of 1.2×10⁻⁸, with a DNR of detected signals of around 81 dB. It has been shown that PSDAVLL might be successfully used as a method for spectra-stable laser sources.

Highly angular dependent high-contrast grating mirror and its application for transverse-mode control of VCSELs

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Kashino, Junichi; Matsutani, Akihiro; Ohtsuki, Hideo; Miyashita, Takahiro; Koyama, Fumio

2014-09-01

We report on the design and fabrication of a highly angular dependent high contrast grating (HCG) mirror. The modeling and experiment on amorphous-Si/SiO2 HCG clearly show the large angular dependence of reflectivity, which enables single transverse-mode operations of large-area VCSELs. We fabricate 980 nm VCSELs with the angular dependent HCG functioning as a spatial frequency filter. We obtained the single transverse mode operation of the fabricated device in contrast to conventional VCSELs with semiconductor multilayer mirrors.

Cascade laser applications: trends and challenges

NASA Astrophysics Data System (ADS)

d'Humières, B.; Margoto, Éric; Fazilleau, Yves

2016-03-01

When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

3D optimization of a polymer MOEMS for active focusing of VCSEL beam

NASA Astrophysics Data System (ADS)

Abada, S.; Camps, T.; Reig, B.; Doucet, JB; Daran, E.; Bardinal, V.

2014-05-01

We report on the optimized design of a polymer-based actuator that can be directly integrated on a VCSEL for vertical beam scanning. Its operation principle is based on the vertical displacement of a SU-8 membrane including a polymer microlens. Under an applied thermal gradient, the membrane is shifted vertically due to thermal expansion in the actuation arms induced by Joule effect. This leads to a modification of microlens position and thus to a vertical scan of the laser beam. Membrane vertical displacements as high as 8μm for only 3V applied were recently experimentally obtained. To explain these performances, we developed a comprehensive tri-dimensional thermo-mechanical model that takes into account SU-8 material properties and precise MOEMS geometry. Out-of-plane mechanical coefficients and thermal conductivity were thus integrated in our 3D model (COMSOL Multiphysics). Vertical displacements extracted from these data for different actuation powers were successfully compared to experimental values, validating this modelling tool. Thereby, it was exploited to increase MOEMS electrothermal performance by a factor higher than 5.

Single-mode 850-nm vertical-cavity surface-emitting lasers with Zn-diffusion and oxide-relief apertures for > 50 Gbit/sec OOK and 4-PAM transmission

NASA Astrophysics Data System (ADS)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jyehong; Ledentsov, N. N.; Yang, Ying-Jay

2017-02-01

Vertical-cavity surface-emitting lasers (VCSELs) has become the most important light source in the booming market of short-reach (< 300 meters) optical interconnect (OI). The next generation OI has been targeted at 56 Gbit/sec data rate per channel (CEI-56G) with the total data rate up to 400 Gbit/sec. However, the serious modal dispersion of multi-mode fiber (MMF), limited speed of VCSEL, and its high resistance (> 150 Ω) seriously limits the >50 Gbit/sec linking distance (< 10 m) by using only on-off keying (OOK) modulation scheme without any signal processing techniques. In contrast to OOK, 4-PAM modulation format is attractive for >50 Gbit/sec transmission due to that it can save one-half of the required bandwidth. Nevertheless, a 4.7 dB optical power penalty and the linearity of transmitter would become issues in the 4-PAM linking performance. Besides, in the modern OI system, the optics transreceiver module must be packaged as close as possible with the integrated circuits (ICs). The heat generated from ICs will become an issue in speed of VSCEL. Here, we review our recent work about 850 nm VCSEL, which has unique Zn-diffusion/oxide-relief apertures and special p- doping active layer with strong wavelength detuning to further enhance its modulation speed and high-temperature (85°C) performances. Single-mode (SM) devices with high-speed ( 26 GHz), reasonable resistance ( 70 Ω) and moderate output power ( 1.5 mW) can be achieved. Error-free 54 Gbit/sec OOK transmission through 1km MMF has been realized by using such SM device with signal processing techniques. Besides, the volterra nonlinear equalizer has been applied in our 4-PAM 64 Gbit/sec transmission through 2-km OM4 MMF, which significantly enhance the linearity of device and outperforms fed forward equalization (FFE) technique. Record high bit-rate distance product of 128.km is confirmed for optical-interconnect applications.

VCSEL-based oxygen spectroscopy for structural analysis of pharmaceutical solids

NASA Astrophysics Data System (ADS)

Svensson, T.; Andersson, M.; Rippe, L.; Svanberg, S.; Andersson-Engels, S.; Johansson, J.; Folestad, S.

2008-02-01

We present a minimalistic and flexible single-beam instrumentation based on sensitive tunable diode laser absorption spectroscopy (TDLAS) and its use in structural analysis of highly scattering pharmaceutical solids. By utilising a vertical cavity surface emitting laser (VCSEL) for sensing of molecular oxygen dispersed in tablets, we address structural properties such as porosity. Experiments involve working with unknown path lengths, severe backscattering and diffuse light. These unusual experimental conditions has led to the use of the term gas in scattering media absorption spectroscopy (GASMAS). By employing fully digital wavelength modulation spectroscopy and coherent sampling, system sensitivity in ambient air experiments reaches the 10-7 range. Oxygen absorption exhibited by our tablets, being influenced by both sample porosity and scattering, was in the range 8×10-5 to 2×10-3, and corresponds to 2-50 mm of path length through ambient air (Leq). The day-to-day reproducibility was on average 1.8% (0.3 mm Leq), being limited by mechanical positioning. This is the first time sub-millimetre sensitivity is reached in GASMAS. We also demonstrate measurements on gas transport on a 1-s time scale. By employing pulsed illumination and time-correlated single-photon counting, we reveal that GASMAS exhibits excellent correlation with time-domain photon migration. In addition, we introduce an optical measure of porosity by relating oxygen absorption to average photon time-of-flight. Finally, the simplicity, robustness and low cost of this novel TDLAS instrumentation provide industrial potential.

Roughness sensor based on a compact optoelectronic emitter-receiver modules

NASA Astrophysics Data System (ADS)

Will, Matthias; Brodersen, Olaf; Steinke, Arndt

2012-04-01

In construction and manufacturing the surface roughness and their control plays a major role. The mechanical test probes are used in many applications, because the advantage of the higher resolution of optical systems often plays no role. But in all cases the measurement systems were uses outside of fabrication processes due to the complex and expensive equipment. To overcome these we developed a roughness sensor suitable for an automated control of machined surfaces. The sensor is able to handle high throughput and parallel systems is due to the low cost available. Our solution is compact stand-alone sensors that can be simple integrated in existing systems like machine tools or transport systems. The sensor is based on a diode laser, focusing optics and a special silicon photo diode array in a stable housing. The single-mode VCSEL at 670 nm emission wavelength is focused on the surface of the sample at distance of 5mm. The light was reflected from the test surface and detected with an 8-channel photodiode array. The position of the main reflex allows an optimization of the sensor distance to the surface. During the movement of the sample with a known velocity roughness depended signals over time were recorded at 8 cannels. This allows a detection of the angular distribution of the scattered light in combination of position dependent refection. It was shown here that we be able to achieve resolution below the spot diameter (30μm FWHM). We verify the sensor capabilities for real world applications on drilled samples with typical roughness variations in micro meter range.

Epitaxy of spin injectors and their application toward spin-polarized lasers

NASA Astrophysics Data System (ADS)

Holub, Michael A.

Spintronics is an emerging; multidisciplinary field which examines the role of electron and nuclear spin in solid-state physics. Recent experiments suggest that the spin degree of freedom may be exploited to enhance the functionality of conventional semi conductor devices. Such endeavors require methods for efficient spin injection; spin transport, and spin detection in semiconductor heterostructures. This dissertation investigates the molecular-beam epitaxial growth and properties of ferromagnetic materials for electrical spin injection. Spin-injecting contacts are incorporated into prototype spintronic devices and their performance is examined. Two classes of materials may be used for spin injection into semiconductors: dilute magnetic semiconductor and ferromagnetic metals. The low-temperature growth and properties of (Al)Gal4nAs and In(Ga)MnAs epilayers and nanostructures are investigated, and a technique for the self-organized growth of Mn-doped InAs quantum dots is developed. The epitaxial growth of (Fe,MnAs)/(Al)GaAs Schottky tunnel barriers for electron spin injection is also investigated. The spin-injection efficiency of these contacts is assessed using a spin-valve or spin-polarized light-emitting diode. Lateral MnAs/GaAs spin-valves where Schottky tunnel barriers enable all-electrical spin injection and detection are grown, fabricated, and characterized. The Rowell criteria confirm that tunneling is the dominant, transport mechanism for the Schottky tunnel contacts. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K are observed for a 0.5 pin channel length spin-valve. Measurements using non-local spin-valves and other control devices verify that spurious contributions from anisotropic magnetoresistance and local Hall effects are negligible. Spin-polarized lasers offer inherent polarization control, reduced chirp, and lower threshold currents and are expected to outperform their charge-based counterparts. Initial efforts to realize a spin-VCSEL utilize (Ga,Mn)As spin aligners for hole spin injection. The polarization of the laser emission is dominated by dichroic absorption in the ferromagnetic (Ga,Mn)As spin-aligner layer, which greatly complicates the verification of spin injection. Significant spin-dependent effects are observed in a spin-VCSEL utilizing epitaxially regrown Fe/AlGaAs Schottky tunnel barriers. A maximum degree of circular polarization of 23% and corresponding threshold current reduction of 11% are measured for a 15 mum Fe spin-VCSEL at 50 K. A cavity spin polarization of 16.8% is estimated from rate equation analysis.

Wavelength-scale Microlasers based on VCSEL-Photonic Crystal Architecture

DTIC Science & Technology

2015-01-20

molecular beam epitaxy , MBE). We will also assume the triangular lattice of air...Abbreviations, and Acronyms InP: indium phosphide InGaAsP: indium gallium arsenide phosphide MBE: molecular beam epiitaxy VCSEL : vertical cavity...substrates and were grown by MBE. Electron beam lithography and reactive ion etching was used to deep‐etch the holes of the PhC‐ VCSELS ,

Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Optical Multi-Gas Monitor Technology Demonstration on the International Space Station

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey S.; Wood, William R.; Casias, Miguel E.; Vakhtin, Andrei B.; Johnson, Michael D.; Mudgett, Paul D.

2014-01-01

The International Space Station (ISS) employs a suite of portable and permanently located gas monitors to insure crew health and safety. These sensors are tasked with functions ranging from fixed mass spectrometer based major constituents analysis to portable electrochemical sensor based combustion product monitoring. An all optical multigas sensor is being developed that can provide the specificity of a mass spectrometer with the portability of an electrochemical cell. The technology, developed under the Small Business Innovation Research program, allows for an architecture that is rugged, compact and low power. A four gas version called the Multi-Gas Monitor was launched to ISS in November 2013 aboard Soyuz and activated in February 2014. The portable instrument is comprised of a major constituents analyzer (water vapor, carbon dioxide, oxygen) and high dynamic range real-time ammonia sensor. All species are sensed inside the same enhanced path length optical cell with a separate vertical cavity surface emitting laser (VCSEL) targeted at each species. The prototype is controlled digitally with a field-programmable gate array/microcontroller architecture. The optical and electronic approaches are designed for scalability and future versions could add three important acid gases and carbon monoxide combustion product gases to the four species already sensed. Results obtained to date from the technology demonstration on ISS are presented and discussed.

Wavelength shifting of intra-cavity photons: Adiabatic wavelength tuning in rapidly wavelength-swept lasers

PubMed Central

Jirauschek, Christian; Huber, Robert

2015-01-01

We analyze the physics behind the newest generation of rapidly wavelength tunable sources for optical coherence tomography (OCT), retaining a single longitudinal cavity mode during operation without repeated build up of lasing. In this context, we theoretically investigate the currently existing concepts of rapidly wavelength-swept lasers based on tuning of the cavity length or refractive index, leading to an altered optical path length inside the resonator. Specifically, we consider vertical-cavity surface-emitting lasers (VCSELs) with microelectromechanical system (MEMS) mirrors as well as Fourier domain mode-locked (FDML) and Vernier-tuned distributed Bragg reflector (VT-DBR) lasers. Based on heuristic arguments and exact analytical solutions of Maxwell’s equations for a fundamental laser resonator model, we show that adiabatic wavelength tuning is achieved, i.e., hopping between cavity modes associated with a repeated build up of lasing is avoided, and the photon number is conserved. As a consequence, no fundamental limit exists for the wavelength tuning speed, in principle enabling wide-range wavelength sweeps at arbitrary tuning speeds with narrow instantaneous linewidth. PMID:26203373

Effects of laser source parameters on the generation of narrow band and directed laser ultrasound

NASA Technical Reports Server (NTRS)

Spicer, James B.; Deaton, John B., Jr.; Wagner, James W.

1992-01-01

Predictive and prescriptive modeling of laser arrays is performed to demonstrate the effects of the extension of array elements on laser array performance. For a repetitively pulsed laser source (the temporal laser array), efficient frequency compression is best achieved by detecting longitudinal waves off-epicenter in plates where the source size and shape directly influence the longitudinal wave shape and duration; the longitudinal array may be tailored for a given repetition frequency to yield efficient overtone energy compression into the fundamental frequency band. For phased arrays, apparent array directivity is heavily influenced by array element size.

Trimethylamine alane for low-pressure MOVPE growth of AlGaAs-based materials and device structures

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Bryan, R. P.; Jones, E. D.; Biefield, R. M.; Olbright, G. R.

The use of trimethylamine alane (TMAA1) as an alternative to trimethylaluminum (TMA1) for low-pressure metalorganic vapor-phase epitaxy (MOVPE) of AlGaAs thin films as well as complex optoelectronic device structures has been studied in detail. AlGaAs layers were grown in a horizontal reaction chamber at 20 - 110 mbar with growth temperatures in the range 650 C less than or equal to T(sub G) less than or equal to 750 C. Wafer thickness uniformity is strongly dependent on growth pressure, and is acceptable only for the highest linear flow velocities. The 12 K photoluminescence (PL) spectra of AlGaAs layers grown using TMAA1 and TEGa exhibit uniformly intense and narrow bound-exciton emission throughout the growth temperature range investigated. To assess the viability of this new source for the low-pressure OMVPE growth of advanced optoelectronic devices, several optically-pumped vertical-cavity surface-emitting laser (VCSEL) structures were grown using TMAA1 extensively. Room temperature lasing at 850 nm was reproducibly obtained from the VCSEL structures, with a threshold pumping power comparable to similar structures grown by molecular beam epitaxy in our laboratories.

Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

NASA Astrophysics Data System (ADS)

Goddard, Lynford

2005-12-01

Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

High-Speed High-Efficiency Large-Area Resonant Cavity Enhanced p-i-n Photodiodes for Multimode Fiber Communications

DTIC Science & Technology

2001-12-01

850 nm. The layers are grown by molecular beam epitaxy . The AlGaAs–GaAs inter- faces are alloy-graded for 30 nm to eliminate charge trapping that may... beam of the VCSELs allow for easy coupling of light into the MMF, it is also desirable to have photodetectors with large active windows compatible with... VCSEL )emitting at 850 nm [1] have become the preferred source for high-speed short-wavelength communication systems. These VCSELs are particularly

A Comparative Study of QD and Nitrogen-Based 1.3 mu m VCSELs

DTIC Science & Technology

2001-06-01

molecular beam epitaxy (MBE) proposed as promising candidates for 1.3 /tm emitters. Among them InGaAsN quantum well (QW) and InGaAs quantum dots (QD... VCSELs DISTRIBUTION: Approved for public release, distribution unlimited Availability: Hard copy only. This paper is part of the following report: TITLE...and Technology" LOED.02 St Petersburg, Russia, June 18-22, 2001 ©0 2001 loffe Institute A comparative study of QD and nitrogen-based 1.3 /tm VCSELs A. P

Multigigabit optical transceivers for high-data rate military applications

NASA Astrophysics Data System (ADS)

Catanzaro, Brian E.; Kuznia, Charlie

2012-01-01

Avionics has experienced an ever increasing demand for processing power and communication bandwidth. Currently deployed avionics systems require gigabit communication using opto-electronic transceivers connected with parallel optical fiber. Ultra Communications has developed a series of transceiver solutions combining ASIC technology with flip-chip bonding and advanced opto-mechanical molded optics. Ultra Communications custom high speed ASIC chips are developed using an SoS (silicon on sapphire) process. These circuits are flip chip bonded with sources (VCSEL arrays) and detectors (PIN diodes) to create an Opto-Electronic Integrated Circuit (OEIC). These have been combined with micro-optics assemblies to create transceivers with interfaces to standard fiber array (MT) cabling technology. We present an overview of the demands for transceivers in military applications and how new generation transceivers leverage both previous generation military optical transceivers as well as commercial high performance computing optical transceivers.

4 Gbps impulse radio (IR) ultra-wideband (UWB) transmission over 100 meters multi mode fiber with 4 meters wireless transmission.

PubMed

Jensen, Jesper Bevensee; Rodes, Roberto; Caballero, Antonio; Yu, Xianbin; Gibbon, Timothy Braidwood; Monroy, Idelfonso Tafur

2009-09-14

We present experimental demonstrations of in-building impulse radio (IR) ultra-wideband (UWB) link consisting of 100 m multi mode fiber (MMF) and 4 m wireless transmission at a record 4 Gbps, and a record 8 m wireless transmission at 2.5 Gbps. A directly modulated vertical cavity surface emitting laser (VCSEL) was used for the generation of the optical signal. 8 m at 2.5 Gbps corresponds to a bit rate--distance product of 20; the highest yet reported for wireless IR-UWB transmission.

Vertical electro-absorption modulator design and its integration in a VCSEL

NASA Astrophysics Data System (ADS)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.

2018-04-01

Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

Fast physical-random number generation using laser diode's frequency noise: influence of frequency discriminator

NASA Astrophysics Data System (ADS)

Matsumoto, Kouhei; Kasuya, Yuki; Yumoto, Mitsuki; Arai, Hideaki; Sato, Takashi; Sakamoto, Shuichi; Ohkawa, Masashi; Ohdaira, Yasuo

2018-02-01

Not so long ago, pseudo random numbers generated by numerical formulae were considered to be adequate for encrypting important data-files, because of the time needed to decode them. With today's ultra high-speed processors, however, this is no longer true. So, in order to thwart ever-more advanced attempts to breach our system's protections, cryptologists have devised a method that is considered to be virtually impossible to decode, and uses what is a limitless number of physical random numbers. This research describes a method, whereby laser diode's frequency noise generate a large quantities of physical random numbers. Using two types of photo detectors (APD and PIN-PD), we tested the abilities of two types of lasers (FP-LD and VCSEL) to generate random numbers. In all instances, an etalon served as frequency discriminator, the examination pass rates were determined using NIST FIPS140-2 test at each bit, and the Random Number Generation (RNG) speed was noted.

Optical Properties of A GaInNAs Multi-Quantum Well Semiconductor

NASA Astrophysics Data System (ADS)

Hughes, Timothy S.; Ren, Shang-Fen; Jiang, De-Sheng; Xiaogan, Liang

2002-03-01

Optoelectronic devices used today depend on lasers that have wavelengths in the optical fiber transmission window of 1.3 to 1.55 micrometers. When using GaAs substrate semiconductor lasers, we typically see this range of light emission. Quaternary materials, such as GaInNAs grown on this substrate, not only allow us to control the output wavelength, but it also allows us to manipulate the lattice constant. Further research has potential to produce low-costing highly efficient Vertical Cavity Surface Emitting Lasers (VCSEL). Using a Fourier-Transform Spectrometer, a method of using a Michelson Interferometer to measure the interference between two coherent beams, we measured and analyzed the photoluminescence spectra of a GaInNAs multi-quantum well semiconductor, grown using the Molecular Beam Epitaxy (MBE) growth technique. The experiments of this research were carried out in an undergraduate international research experience at the Chinese Semiconductor Institute supported by the Division of International Programs of NSF.

The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

2018-02-01

In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Behavioral modeling of VCSELs for high-speed optical interconnects

NASA Astrophysics Data System (ADS)

Szczerba, Krzysztof; Kocot, Chris

2018-02-01

Transition from on-off keying to 4-level pulse amplitude modulation (PAM) in VCSEL based optical interconnects allows for an increase of data rates, at the cost of 4.8 dB sensitivity penalty. The resulting strained link budget creates a need for accurate VCSEL models for driver integrated circuit (IC) design and system level simulations. Rate equation based equivalent circuit models are convenient for the IC design, but system level analysis requires computationally efficient closed form behavioral models based Volterra series and neural networks. In this paper we present and compare these models.

Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter.

PubMed

Lin, Chia-Chi; Kuo, Hao-Chung; Peng, Peng-Chun; Lin, Gong-Ru

2008-03-31

Optically injection-locked single-wavelength gain-switching VCSEL based all-optical converter is demonstrated to generate RZ data at 2.5 Gbit/s with bit-error-rate of 10(-9) under receiving power of -29.3 dBm. A modified rate equation model is established to elucidate the optical injection induced gain-switching and NRZ-to-RZ data conversion in the VCSEL. The peak-to-peak frequency chirp of the VCSEL based NRZ-to-RZ is 4.5 GHz associated with a reduced frequency chirp rate of 178 MHz/ps at input optical NRZ power of -21 dBm, which is almost decreasing by a factor of 1/3 comparing with chirp on the SOA based NRZ-to-RZ converter reported previously. The power penalty of the BER measured back-to-back is about 2 dB from 1 Gbit/s to 2.5 Gbit/s.

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

NASA Astrophysics Data System (ADS)

Kovsh, Alexey R.; Ledentsov, Nikolai N.; Mikhrin, Sergei S.; Zhukov, Alexey E.; Livshits, Daniil A.; Maleev, Nikolay A.; Maximov, Mikhail V.; Ustinov, Victor M.; Gubenko, Alexey E.; Gadjiev, Igor M.; Portnoi, Efim L.; Wang, Jyh Shyang; Chi, Jim Y.; Ouyang, Donald N.; Bimberg, Dieter; Lott, James A.

2004-06-01

The molecular beam epitaxy of self-assembled quantum dots (QDs) has reached a level such that the principal advantages of QD lasers can now be fully realized. We overview the most important recent results achieved to date including excellent device performance of 1.3 μm broad area and ridge waveguide lasers (Jth<150A/cm2, Ith=1.4 mA, differential efficiency above 70%, CW 300 mW single lateral mode operation), suppression of non-linearity of QD lasers, which results to improved beam quality, reduced wavelength chirp and sensitivity to optical feedback. Effect of suppression of side wall recombination in QD lasers is also described. These effects give a possibility to further improve and simplify processing and fabrication of laser modules targeting their cost reduction. Recent realization of 2 mW single mode CW operation of QD VCSEL with all-semiconductor DBR is also presented. Long-wavelength QD lasers are promising candidate for mode-locking lasers for optical computer application. Very recently 1.7-ps-wide pulses at repetition rate of 20 GHz were obtained on mode-locked QD lasers with clear indication of possible shortening of pulse width upon processing optimization. First step of unification of laser technology for telecom range with QD-lasers grown on GaAs has been done. Lasing at 1.5 μm is achieved with threshold current density of 0.8 kA/cm2 and pulsed output power 7W.

Qualification of Laser Diode Arrays for Mercury Laser Altimeter

NASA Technical Reports Server (NTRS)

Stephen, Mark; Vasilyev, Aleksey; Schafer, John; Allan, Graham R.

2004-01-01

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance of Quasi-CW, High-power, laser diode arrays under extended use is presented. We report the optical power over several hundred million pulse operation and the effect of power cycling and temperature cycling of the laser diode arrays. Data on the initial characterization of the devices is also presented.

Numerical study of the properties of optical vortex array laser tweezers.

PubMed

Kuo, Chun-Fu; Chu, Shu-Chun

2013-11-04

Chu et al. constructed a kind of Ince-Gaussian modes (IGM)-based vortex array laser beams consisting of p x p embedded optical vortexes from Ince-Gaussian modes, IG(e)(p,p) modes [Opt. Express 16, 19934 (2008)]. Such an IGM-based vortex array laser beams maintains its vortex array profile during both propagation and focusing, and is applicable to optical tweezers. This study uses the discrete dipole approximation (DDA) method to study the properties of the IGM-based vortex array laser tweezers while it traps dielectric particles. This study calculates the resultant force exerted on the spherical dielectric particles of different sizes situated at the IGM-based vortex array laser beam waist. Numerical results show that the number of trapping spots of a structure light (i.e. IGM-based vortex laser beam), is depended on the relation between the trapped particle size and the structure light beam size. While the trapped particle is small comparing to the beam size of the IGM-based vortex array laser beams, the IGM-based vortex array laser beams tweezers are suitable for multiple traps. Conversely, the tweezers is suitable for single traps. The results of this study is useful to the future development of the vortex array laser tweezers applications.

In situ optical time-domain reflectometry (OTDR) for VCSEL-based communication systems

NASA Astrophysics Data System (ADS)

Keeler, Gordon A.; Serkland, Darwin K.; Geib, Kent M.; Klem, John F.; Peake, Gregory M.

2006-02-01

Optical time-domain reflectometry (OTDR) is an effective technique for locating faults in fiber communication links. The fact that most OTDR measurements are performed manually is a significant drawback, because it makes them too costly for use in many short-distance networks and too slow for use in military avionic platforms. Here we describe and demonstrate an automated, low-cost, real-time approach to fault monitoring that can be achieved by integrating OTDR functionality directly into VCSEL-based transceivers. This built-in test capability is straightforward to implement and relevant to both multimode and single mode networks. In-situ OTDR uses the transmitter VCSEL already present in data transceivers. Fault monitoring is performed by emitting a brief optical pulse into the fiber and then turning the VCSEL off. If a fault exists, a portion of the optical pulse returns to the transceiver after a time equal to the round-trip delay through the fiber. In multimode OTDR, the signal is detected by an integrated photodetector, while in single mode OTDR the VCSEL itself can be used as a detector. Modified driver electronics perform the measurement and analysis. We demonstrate that VCSEL-based OTDR has sufficient sensitivity to determine the location of most faults commonly seen in short-haul networks (i.e., the Fresnel reflections from improperly terminated fibers and scattering from raggedly-broken fibers). Results are described for single mode and multimode experiments, at both 850 nm and 1.3 μm. We discuss the resolution and sensitivity that have been achieved, as well as expected limitations for this novel approach to network monitoring.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1991-01-01

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

Swept source optical coherence microscopy using a 1310 nm VCSEL light source

PubMed Central

Ahsen, Osman O.; Tao, Yuankai K.; Potsaid, Benjamin M.; Sheikine, Yuri; Jiang, James; Grulkowski, Ireneusz; Tsai, Tsung-Han; Jayaraman, Vijaysekhar; Kraus, Martin F.; Connolly, James L.; Hornegger, Joachim; Cable, Alex; Fujimoto, James G.

2013-01-01

We demonstrate high speed, swept source optical coherence microscopy (OCM) using a MEMS tunable vertical cavity surface-emitting laser (VCSEL) light source. The light source had a sweep rate of 280 kHz, providing a bidirectional axial scan rate of 560 kHz. The sweep bandwidth was 117 nm centered at 1310 nm, corresponding to an axial resolution of 13.1 µm in air, corresponding to 8.1 µm (9.6 µm spectrally shaped) in tissue. Dispersion mismatch from different objectives was compensated numerically, enabling magnification and field of view to be easily changed. OCM images were acquired with transverse resolutions between 0.86 µm - 3.42 µm using interchangeable 40X, 20X and 10X objectives with ~600 µm x 600 µm, ~1 mm x 1 mm and ~2 mm x 2 mm field-of-view (FOV), respectively. Parasitic variations in path length with beam scanning were corrected numerically. These features enable swept source OCM to be integrated with a wide range of existing scanning microscopes. Large FOV mosaics were generated by serially acquiring adjacent overlapping microscopic fields and combining them in post-processing. Fresh human colon, thyroid and kidney specimens were imaged ex vivo and compared to matching histology sections, demonstrating the ability of OCM to image tissue specimens. PMID:23938673

Phase and Frequency Control of Laser Arrays for Pulse Synthesis

DTIC Science & Technology

2015-01-02

with the laser array to understand the phase noise of elements on a common heat sink, and the relationship between linewidth and feedback speed...spatial brightness operation of a phase-locked stripe -array diode laser,” Laser Phys. 22, 160 (2012). [2] J. R. Leger, “Lateral mode control of an AlGaAs...Jechow, D. Skoczowsky, and R. Menzel, “Multi-wavelength, high spatial brightness operation of a phase-locked stripe -array diode laser,” Laser Phys. 22

Single-element optical injection locking of diode-laser arrays

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1988-01-01

By optically injecting a single end-element of a semiconductor laser array, both the spatial and spectral emission characteristics of the entire laser array is controlled. With the output of the array locked, the far-field emission angle of the array is continuously scanned over several degrees by varying the injection frequency.

Ultra Small Integrated Optical Fiber Sensing System

PubMed Central

Van Hoe, Bram; Lee, Graham; Bosman, Erwin; Missinne, Jeroen; Kalathimekkad, Sandeep; Maskery, Oliver; Webb, David J.; Sugden, Kate; Van Daele, Peter; Van Steenberge, Geert

2012-01-01

This paper introduces a revolutionary way to interrogate optical fiber sensors based on fiber Bragg gratings (FBGs) and to integrate the necessary driving optoelectronic components with the sensor elements. Low-cost optoelectronic chips are used to interrogate the optical fibers, creating a portable dynamic sensing system as an alternative for the traditionally bulky and expensive fiber sensor interrogation units. The possibility to embed these laser and detector chips is demonstrated resulting in an ultra thin flexible optoelectronic package of only 40 μm, provided with an integrated planar fiber pigtail. The result is a fully embedded flexible sensing system with a thickness of only 1 mm, based on a single Vertical-Cavity Surface-Emitting Laser (VCSEL), fiber sensor and photodetector chip. Temperature, strain and electrodynamic shaking tests have been performed on our system, not limited to static read-out measurements but dynamically reconstructing full spectral information datasets.

GaSb/AlGaSb VCSEL structures and microcavities in the 1.5 μm wavelength range

NASA Astrophysics Data System (ADS)

Koeth, J.; Dietrich, R.; Reithmaier, J. P.; Forchel, A.

Vertical cavity surface emitting laser structures for 1.5 μm wavelength applications were realized by growing AlSb/AlGaSb Bragg mirrors on GaAs substrates with solid source molecular beam epitaxy. Due to the high refractive index contrast between GaSb and AlSb high quality resonators can be made by only 15 layer pairs for each Bragg mirror. Laser operation could be demonstrated by optical pumping with threshold excitation densities of about 500 W/cm2. In laterally deeply etched microcavities with diameters of 5 μm a clear discretization of the optical modes was observed. The lateral confinement effects are compared with results of AlAs/GaAs microcavities designed for 0.9 μm emission wavelength. Due to the longer wavelength a stronger confinement effect can be achieved in AlSb/AlGaSb microcavities for the same lateral dimensions.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1991-02-19

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

DFB laser array driver circuit controlled by adjustable signal

NASA Astrophysics Data System (ADS)

Du, Weikang; Du, Yinchao; Guo, Yu; Li, Wei; Wang, Hao

2018-01-01

In order to achieve the intelligent controlling of DFB laser array, this paper presents the design of an intelligence and high precision numerical controlling electric circuit. The system takes MCU and FPGA as the main control chip, with compact, high-efficiency, no impact, switching protection characteristics. The output of the DFB laser array can be determined by an external adjustable signal. The system transforms the analog control model into a digital control model, which improves the performance of the driver. The system can monitor the temperature and current of DFB laser array in real time. The output precision of the current can reach ± 0.1mA, which ensures the stable and reliable operation of the DFB laser array. Such a driver can benefit the flexible usage of the DFB laser array.

A high capacity data centre network: simultaneous 4-PAM data at 20 Gbps and 2 GHz phase modulated RF clock signal over a single VCSEL carrier

NASA Astrophysics Data System (ADS)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-11-01

Optical fibre communication technologies are playing important roles in data centre networks (DCNs). Techniques for increasing capacity and flexibility for the inter-rack/pod communications in data centres have drawn remarkable attention in recent years. In this work, we propose a low complexity, reliable, alternative technique for increasing DCN capacity and flexibility through multi-signal modulation onto a single mode VCSEL carrier. A 20 Gbps 4-PAM data signal is directly modulated on a single mode 10 GHz bandwidth VCSEL carrier at 1310 nm, therefore, doubling the network bit rate. Carrier spectral efficiency is further maximized by modulating its phase attribute with a 2 GHz reference frequency (RF) clock signal. We, therefore, simultaneously transmit a 20 Gbps 4-PAM data signal and a phase modulated 2 GHz RF signal using a single mode 10 GHz bandwidth VCSEL carrier. It is the first time a single mode 10 GHz bandwidth VCSEL carrier is reported to simultaneously transmit a directly modulated 4-PAM data signal and a phase modulated RF clock signal. A receiver sensitivity of -10. 52 dBm was attained for a 20 Gbps 4-PAM VCSEL transmission. The 2 GHz phase modulated RF clock signal introduced a power budget penalty of 0.21 dB. Simultaneous distribution of both data and timing signals over shared infrastructure significantly increases the aggregated data rate at different optical network units within the DCN, without expensive optics investment. We further demonstrate on the design of a software-defined digital signal processing assisted receiver to efficiently recover the transmitted signal without employing costly receiver hardware.

Characterization of High-power Quasi-cw Laser Diode Arrays

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

Novel Ruggedized Packaging Technology for VCSELs

DTIC Science & Technology

2017-03-01

Novel Ruggedized Packaging Technology for VCSELs Charlie Kuznia ckuznia@ultracomm-inc.com Ultra Communications, Inc. Vista, CA, USA, 92081...n ac hieve l ow-power, E MI-immune links within hi gh-performance m ilitary computing an d sensor systems. Figure 1. Chip-scale-packaging of

PAM-4 Signaling over VCSELs with 0.13µm CMOS Chip Technology

NASA Astrophysics Data System (ADS)

Cunningham, J. E.; Beckman, D.; Zheng, Xuezhe; Huang, Dawei; Sze, T.; Krishnamoorthy, A. V.

2006-12-01

We present results for VCSEL based links operating PAM-4 signaling using a commercial 0.13µm CMOS technology. We perform a complete link analysis of the Bit Error Rate, Q factor, random and deterministic jitter by measuring waterfall curves versus margins in time and amplitude. We demonstrate that VCSEL based PAM 4 can match or even improve performance over binary signaling under conditions of a bandwidth limited, 100meter multi-mode optical link at 5Gbps. We present the first sensitivity measurements for optical PAM-4 and compare it with binary signaling. Measured benefits are reconciled with information theory predictions.

PAM-4 Signaling over VCSELs with 0.13microm CMOS Chip Technology.

PubMed

Cunningham, J E; Beckman, D; Zheng, Xuezhe; Huang, Dawei; Sze, T; Krishnamoorthy, A V

2006-12-11

We present results for VCSEL based links operating PAM-4 signaling using a commercial 0.13microm CMOS technology. We perform a complete link analysis of the Bit Error Rate, Q factor, random and deterministic jitter by measuring waterfall curves versus margins in time and amplitude. We demonstrate that VCSEL based PAM-4 can match or even improve performance over binary signaling under conditions of a bandwidth limited, 100meter multi-mode optical link at 5Gbps. We present the first sensitivity measurements for optical PAM-4 and compare it with binary signaling. Measured benefits are reconciled with information theory predictions.

GBLD10+: a compact low-power 10 Gb/s VCSEL driver

DOE PAGES

Zhang, T.; Kulis, S.; Gui, P.; ...

2016-01-13

We report the design and implementation of the GBLD10+, a low-power 10 Gb/s VCSEL driver for High Energy Physics (HEP) applications. With new circuit techniques, the driver consumes only 31 mW and occupies a small area of 400 μm × 1750 μm including the IO PADs and sealrings. These characteristics allow for multiple GBLD10+ ICs to be assembled side by side in a compact module, with each one directly wire bonded to one VCSEL diode. Finally, this makes the GBLD10+ a suitable candidate for the Versatile Link PLUS (VL +) project, offering flexibility in configuring multiple transmitters and receivers.

Study of phase-locked diode laser array and DFB/DBR surface emitting laser diode

NASA Astrophysics Data System (ADS)

Hsin, Wei

New types of phased-array and surface-emitting lasers are designed. The importance and approaches (or structures) of different phased array and surface emitting laser diodes are reviewed. The following are described: (1) a large optical cavity channel substrate planar laser array with layer thickness chirping; (2) a vertical cavity surface emitter with distributed feedback (DFB) optical cavity and a transverse junction buried heterostructure; (3) a microcavity distributed Bragg reflector (DBR) surface emitter; and (4) two surface emitting laser structures which utilized lateral current injection schemes to overcome the problems occurring in the vertical injection scheme.

Quantum Cascade Laser Tuning by Digital Micromirror Array-controlled External Cavity

DTIC Science & Technology

2014-01-01

P. Vujkovic-Cvijin, B. Gregor, A. C. Samuels, E. S. Roese, Quantum cascade laser tuning by digital micromirror array-controlled external cavity...REPORT TYPE 3. DATES COVERED 00-00-2014 to 00-00-2014 4. TITLE AND SUBTITLE Quantum cascade laser tuning by digital micromirror array-controlled...dimensional digital micromirror array (DMA) is described. The laser is tuned by modulating the reflectivity of DMA micromirror pixels under computer

Thin planar package for cooling an array of edge-emitting laser diodes

DOEpatents

Mundinger, David C.; Benett, William J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar assemblies and active cooling of each assembly. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar assembly having the laser diode bar located proximate to one edge. In an array, a number of such thin planar assemblies are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink proximate to the laser diode bar to absorb heat generated by laser operation. To provide the coolant to the microchannels, each thin planar assembly comprises passageways that connect the microchannels to inlet and outlet corridors. Each inlet passageway may comprise a narrow slot that directs coolant into the microchannels and increases the velocity of flow therethrough. The corridors comprises holes extending through each of the assemblies in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has applications as an optical pump for high power solid state lasers, or by mating the diodes with fiber optic lenses. Further, the arrays can be useful in applications having space constraints and energy limitations, and in military and space applications. The arrays can be incorporated in equipment such as communications devices and active sensors.

Experimental demonstration of a multi-wavelength distributed feedback semiconductor laser array with an equivalent chirped grating profile based on the equivalent chirp technology.

PubMed

Li, Wangzhe; Zhang, Xia; Yao, Jianping

2013-08-26

We report, to the best of our knowledge, the first realization of a multi-wavelength distributed feedback (DFB) semiconductor laser array with an equivalent chirped grating profile based on equivalent chirp technology. All the lasers in the laser array have an identical grating period with an equivalent chirped grating structure, which are realized by nonuniform sampling of the gratings. Different wavelengths are achieved by changing the sampling functions. A multi-wavelength DFB semiconductor laser array is fabricated and the lasing performance is evaluated. The results show that the equivalent chirp technology is an effective solution for monolithic integration of a multi-wavelength laser array with potential for large volume fabrication.

Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

NASA Astrophysics Data System (ADS)

O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

2017-02-01

Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

Imaging System With Confocally Self-Detecting Laser.

DOEpatents

Webb, Robert H.; Rogomentich, Fran J.

1996-10-08

The invention relates to a confocal laser imaging system and method. The system includes a laser source, a beam splitter, focusing elements, and a photosensitive detector. The laser source projects a laser beam along a first optical path at an object to be imaged, and modulates the intensity of the projected laser beam in response to light reflected from the object. A beam splitter directs a portion of the projected laser beam onto a photodetector. The photodetector monitors the intensity of laser output. The laser source can be an electrically scannable array, with a lens or objective assembly for focusing light generated by the array onto the object of interest. As the array is energized, its laser beams scan over the object, and light reflected at each point is returned by the lens to the element of the array from which it originated. A single photosensitive detector element can generate an intensity-representative signal for all lasers of the array. The intensity-representative signal from the photosensitive detector can be processed to provide an image of the object of interest.

Modular package for cooling a laser diode array

DOEpatents

Mundinger, David C.; Benett, William J.; Beach, Raymond J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar packages and active cooling. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar package having the laser diode bar located proximate to one edge. In an array, a number of such thin planar packages are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink that is attached proximate to the laser bar so that it absorbs heat generated by laser operation. To provide the coolant to the microchannels, each thin planar package comprises a thin inlet manifold and a thin outlet manifold connected to an inlet corridor and an outlet corridor. The inlet corridor comprises a hole extending through each of the packages in the array, and the outlet corridor comprises a hole extending through each of the packages in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has application as an optical pump for high power solid state lasers. Further, it can be incorporated in equipment such as communications devices and active sensors, and in military and space applications, and it can be useful in applications having space constraints and energy limitations.

Reliability of High Power Laser Diode Arrays Operating in Long Pulse Mode

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

2006-01-01

Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime.

V-shaped resonators for addition of broad-area laser diode arrays

DOEpatents

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

High density pixel array and laser micro-milling method for fabricating array

NASA Technical Reports Server (NTRS)

McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)

2003-01-01

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Ruggedized microchannel-cooled laser diode array with self-aligned microlens

DOEpatents

Freitas, Barry L.; Skidmore, Jay A.

2003-11-11

A microchannel-cooled, optically corrected, laser diode array is fabricated by mounting laser diode bars onto Si surfaces. This approach allows for the highest thermal impedance, in a ruggedized, low-cost assembly that includes passive microlens attachment without the need for lens frames. The microlensed laser diode array is usable in all solid-state laser systems that require efficient, directional, narrow bandwidth, high optical power density pump sources.

A new three-dimensional nonscanning laser imaging system based on the illumination pattern of a point-light-source array

NASA Astrophysics Data System (ADS)

Xia, Wenze; Ma, Yayun; Han, Shaokun; Wang, Yulin; Liu, Fei; Zhai, Yu

2018-06-01

One of the most important goals of research on three-dimensional nonscanning laser imaging systems is the improvement of the illumination system. In this paper, a new three-dimensional nonscanning laser imaging system based on the illumination pattern of a point-light-source array is proposed. This array is obtained using a fiber array connected to a laser array with each unit laser having independent control circuits. This system uses a point-to-point imaging process, which is realized using the exact corresponding optical relationship between the point-light-source array and a linear-mode avalanche photodiode array detector. The complete working process of this system is explained in detail, and the mathematical model of this system containing four equations is established. A simulated contrast experiment and two real contrast experiments which use the simplified setup without a laser array are performed. The final results demonstrate that unlike a conventional three-dimensional nonscanning laser imaging system, the proposed system meets all the requirements of an eligible illumination system. Finally, the imaging performance of this system is analyzed under defocusing situations, and analytical results show that the system has good defocusing robustness and can be easily adjusted in real applications.

3-D integrated heterogeneous intra-chip free-space optical interconnect.

PubMed

Ciftcioglu, Berkehan; Berman, Rebecca; Wang, Shang; Hu, Jianyun; Savidis, Ioannis; Jain, Manish; Moore, Duncan; Huang, Michael; Friedman, Eby G; Wicks, Gary; Wu, Hui

2012-02-13

This paper presents the first chip-scale demonstration of an intra-chip free-space optical interconnect (FSOI) we recently proposed. This interconnect system provides point-to-point free-space optical links between any two communication nodes, and hence constructs an all-to-all intra-chip communication fabric, which can be extended for inter-chip communications as well. Unlike electrical and other waveguide-based optical interconnects, FSOI exhibits low latency, high energy efficiency, and large bandwidth density, and hence can significantly improve the performance of future many-core chips. In this paper, we evaluate the performance of the proposed FSOI interconnect, and compare it to a waveguide-based optical interconnect with wavelength division multiplexing (WDM). It shows that the FSOI system can achieve significantly lower loss and higher energy efficiency than the WDM system, even with optimistic assumptions for the latter. A 1×1-cm2 chip prototype is fabricated on a germanium substrate with integrated photodetectors. Commercial 850-nm GaAs vertical-cavity-surface-emitting-lasers (VCSELs) and fabricated fused silica microlenses are 3-D integrated on top of the substrate. At 1.4-cm distance, the measured optical transmission loss is 5 dB, the crosstalk is less than -20 dB, and the electrical-to-electrical bandwidth is 3.3 GHz. The latter is mainly limited by the 5-GHz VCSEL.

Power-efficient dual-rate optical transceiver.

PubMed

Zuo, Yongrong; Kiamiley, Fouad E; Wang, Xiaoqing; Gui, Ping; Ekman, Jeremy; Wang, Xingle; McFadden, Michael J; Haney, Michael W

2005-11-20

A dual-rate (2 Gbit/s and 100 Mbit/s) optical transceiver designed for power-efficient connections within and between modern high-speed digital systems is described. The transceiver can dynamically adjust its data rate according to performance requirements, allowing for power-on-demand operation. Dynamic power management permits energy saving and lowers device operating temperatures, improving the reliability and lifetime of optoelectronic-devices such as vertical-cavity surface-emitting lasers (VCSELs). To implement dual-rate functionality, we include in the transmitter and receiver circuits separate high-speed and low-power data path modules. The high-speed module is designed for gigabit operation to achieve high bandwidth. A simpler low-power module is designed for megabit data transmission with low power consumption. The transceiver is fabricated in a 0.5 microm silicon-on-sapphire complementary metal-oxide semiconductor. The VCSEL and photodetector devices are attached to the transceiver's integrated circuit by flip-chip bonding. A free-space optical link system is constructed to demonstrate correct dual-rate functionality. Experimental results show reliable link operation at 2 Gbit/s and 100 Mbit/s data transfer rates with approximately 104 and approximately 9 mW power consumption, respectively. The transceiver's switching time between these two data rates is demonstrated as 10 micros, which is limited by on-chip register reconfiguration time. Improvement of this switching time can be obtained by use of dedicated input-output pads for dual-rate control signals.

Compact intra-cavity frequency doubled line beam green laser by a laser diode array pumped

NASA Astrophysics Data System (ADS)

Yan, Boxia; Qi, Yan; Wang, Yanwei

2016-10-01

Compact, high power, and low-cost green laser light sources are needed in projection-related applications such as digital cinema, rear-projection television, simulators, and command and control stations. We report a LD array directly pumped intracavity SHG Nd:YVO4/PPMgLN laser without lens or waveguide in this letter. A compact 3.12 W green laser was demonstrated by intra-cavity frequency doubled using a PPMgLN bulk crystal by a 19-emitter LD array pumped(single bar), the conversion efficiency from input LD array was 9.2%. A line-beam output suitable for laser projectors was generated, which has the potential to be scalable to small volumes and low costs for laser projection displays.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Algebraic expressions for the polarisation response of spin-VCSELs

NASA Astrophysics Data System (ADS)

Adams, Mike; Li, Nianqiang; Cemlyn, Ben; Susanto, Hadi; Henning, Ian

2018-06-01

Closed-form expressions are derived for the relationship between the polarisation of the output and that of the pump for spin-polarised vertical-cavity surface-emitting lasers. These expressions are based on the spin-flip model (SFM) combined with the condition that the carrier recombination time is much greater than both the spin relaxation time and the photon lifetime. Allowance is also included for misalignment between the principal axes of birefringence and dichroism. These expressions yield results that are in excellent agreement both with previously published numerical calculations and with further tests for a wide range of parameters. Trends with key parameters of the SFM are easily deduced from these expressions.

VCSEL technologies and applications

NASA Astrophysics Data System (ADS)

Steinle, Gunther; Ramakrishnan, A.; Supper, D.; Kristen, Guenter; Pfeiffer, J.; Degen, Ch.; Riechert, Henning; Ebbinghaus, G.; Wolf, H. D.

2002-07-01

VCSEL devices for 850nm and 1300nm emission wavelength are presented, suitable for operation in single-channel interconnects as well as parallel optical links. Necessary properties for applications such as 10 Gigabit Ethernet and actual limits for the use of VCSELs are discussed in some detail. Recent progress is demonstrated in developing devices with production-friendly diameters larger than 5´m for 10Gbit/s operation. Also devices with a temperature insensitive monolithically integrated monitordiode are presented and discussed. In order to reach the emission wavelength of 1300nm with a GaAs-based monolithic VCSEL-structure, we use GaInNxAs1-x quantum-wells with a small nitrogen concentration x between one and two percent. We have two different growth approaches, such as solid source MBE with a rf-plasma source to produce reactive nitrogen from nitrogen gas N2 and MOCVD with unsymmetrical di-methylhydrazine as a precursor for nitrogen. The long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. Bitrates up to 10Gbit/s per channel can be achieved within both wavelength regimes.

EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

NASA Astrophysics Data System (ADS)

Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei

2017-06-01

We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.

Interface module for transverse energy input to dye laser modules

DOEpatents

English, R.E. Jr.; Johnson, S.A.

1994-10-11

An interface module for transverse energy input to dye laser modules is provided particularly for the purpose of delivering enhancing transverse energy beams in the form of illumination bar to the lasing zone of a dye laser device, in particular to a dye laser amplifier. The preferred interface module includes an optical fiber array having a plurality of optical fibers arrayed in a co-planar fashion with their distal ends receiving coherent laser energy from an enhancing laser source, and their proximal ends delivered into a relay structure. The proximal ends of the optical fibers are arrayed so as to be coplanar and to be aimed generally at a common point. The transverse energy beam array delivered from the optical fiber array is acted upon by an optical element array to produce an illumination bar which has a cross section in the form of a elongated rectangle at the position of the lasing window. The illumination bar is selected to have substantially uniform intensity throughout. 5 figs.

Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation.

PubMed

Shao, Haifeng; Keyvaninia, Shahram; Vanwolleghem, Mathias; Ducournau, Guillaume; Jiang, Xiaoqing; Morthier, Geert; Lampin, Jean-Francois; Roelkens, Gunther

2014-11-15

We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature.

Phase-locked, high power, mid-infrared quantum cascade laser arrays

NASA Astrophysics Data System (ADS)

Zhou, W.; Slivken, S.; Razeghi, M.

2018-04-01

We demonstrate phase-locked, high power quantum cascade laser arrays, which are combined using a monolithic, tree array multimode interferometer, with emission wavelengths around 4.8 μm. A maximum output power of 15 W was achieved from an eight-element laser array, which has only a slightly higher threshold current density and a similar slope efficiency compared to a Fabry-Perot laser of the same length. Calculated multimode interferometer splitting loss is on the order of 0.27 dB for the in-phase supermode. In-phase supermode operation with nearly ideal behavior is demonstrated over the working current range of the array.

A ten-element array of individually addressable channeled-substrate-planar AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Carlin, D. B.; Goldstein, B.; Bednarz, J. P.; Harvey, M. G.; Dinkel, N. A.

1987-01-01

The fabrication of arrays of channeled-substrate-planar (CSP) AlGaAs diode lasers which emit up to 150 mW CW in a single spatial mode and are applicable to mulitchannel optical recording systems is described. The CSP diode lasers are incorporated in ten-array geometry, and each array is 1.95 nm in width and 100 microns in thickness and is cleaved to have a cavity length of 200 microns and coated to produce 90-percent reflectivity on the back facet and 10-percent reflectivity on the front facet. The array is attached to a thermoelectrically cooled submount. The optical output power versus input current characteristics for the array are evaluated, and the lateral far-field intensity profiles for each of the lasers (at 30 mW CW) and CW spectra of the lasers are analyzed.

Nine-channel wavelength tunable single mode laser array based on slots.

PubMed

Guo, Wei-Hua; Lu, Qiaoyin; Nawrocka, Marta; Abdullaev, Azat; O'Callaghan, James; Donegan, John F

2013-04-22

A 9-channel wavelength tunable single-mode laser array based on slots is presented. The fabricated laser array demonstrated a threshold current in a range of 19~21 mA with the SOA unbiased at 20°C under continuous wave condition. Stable single mode performances have been observed with side-mode suppression-ratio (SMSR) > 50 dB. The output power higher than 37 mW was obtained at the SOA injected current of 70 mA for all the 9 channels within the laser array. A wavelength quasi-continuous tuning range of about 27 nm has been achieved for the laser array with the temperature variations from 10°C to 45°C. This array platform is of a single growth and monolithically integrable. It can be easily fabricated by standard photolithography. In addition, it potentially removes the yield problem due to the uncertainty of the facet cleaving.

Qualification Testing of Laser Diode Pump Arrays for a Space-Based 2-micron Coherent Doppler Lidar

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Singh, Upendra N.; Kavaya, Michael J.

2007-01-01

The 2-micron thulium and holmium-based lasers being considered as the transmitter source for space-based coherent Doppler lidar require high power laser diode pump arrays operating in a long pulse regime of about 1 msec. Operating laser diode arrays over such long pulses drastically impact their useful lifetime due to the excessive localized heating and substantial pulse-to-pulse thermal cycling of their active regions. This paper describes the long pulse performance of laser diode arrays and their critical thermal characteristics. A viable approach is then offered that allows for determining the optimum operational parameters leading to the maximum attainable lifetime.

Laser photovoltaic power system synergy for SEI applications

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Hickman, J. M.

1991-01-01

Solar arrays can provide reliable space power, but do not operate when there is no solar energy. Photovoltaic arrays can also convert laser energy with high efficiency. One proposal to reduce the required mass of energy storage required is to illuminate the photovoltaic arrays by a ground laser system. It is proposed to locate large lasers on cloud-free sites at one or more ground locations, and use large lenses or mirrors with adaptive optical correction to reduce the beam spread due to diffraction or atmospheric turbulence. During the eclipse periods or lunar night, the lasers illuminate the solar arrays to a level sufficient to provide operating power.

Fiber Laser Arrays

DTIC Science & Technology

2006-05-03

AFRL-DE-PS- AFRL-DE-PS- TR-2006-1059 TR-2006-1059 FIBER LASER ARRAYS Thomas B. Simpson L-3 Communications-Jaycor 3394...LEANNE J HENRY, Lt Col, USAF L. BRUCE SIMPSON, SES Chief, High Power Solid State Laser Branch Director, Directed Energy Directorate...SUBTITLE Fiber Laser Arrays 5c. PROGRAM ELEMENT NUMBER 62605F 5d. PROJECT NUMBER 4866 5e. TASK NUMBER LR 6. AUTHOR(S) Thomas B. Simpson

Phase-locked laser array through global antenna mutual coupling

DOE PAGES

Kao, Tsung -Yu; Reno, John L.; Hu, Qing

2016-01-01

Here, phase locking of an array of lasers is a highly effective way in beam shaping, to increase the output power, and to reduce lasing threshold. In this work, we present a novel phase-locking mechanism based on "antenna mutual coupling" wherein laser elements interact through far-field radiations with definite phase relations. This allows long-range global coupling among array elements to achieve robust 2-dimensional phase-locked laser array. The new scheme is ideal for lasers with deep sub-wavelength confined cavity such as nanolasers, where the divergent beam pattern could be used to form strong coupling among elements in the array. We experimentallymore » demonstrated such a scheme using sub-wavelength short-cavity surface-emitting lasers at terahertz frequency. More than 37 laser elements are phase-locked to each other, delivering up to 6.5 mW single-mode radiations at ~3 terahertz, with maximum 450-mW/A slope efficiency and near diffraction limit beam divergence.« less

Recent progress in 1.3- and 1.5-μm waveband wafer-fused VCSELs

NASA Astrophysics Data System (ADS)

Mereuta, A.; Caliman, A.; Sirbu, A.; Iakovlev, V.; Ellafi, D.; Rudra, A.; Wolf, P.; Bimberg, D.; Kapon, E.

2016-11-01

The progress of 1.3- and 1.5-μm waveband wafer-fused VCSELs is reported. The emission of single mode power of 6 - 8 mW at room temperature and up to 3 mW at 80°C were demonstrated. 10-Gb/s full wavelength-set VCSEL devices for CWDM systems with high yield and Telcordia-reliability were industrially manufactured. By increasing the compressive strain in the QWs and reducing the cavity photon life time the modulation bandwidth was increased to 11.5 GHz, and large-signal data transmission experiments show error-free operation and open eye diagrams from 25 to 35 Gb/s in both B2B and after 10-km, respectively.

Generation of high-order Hermite-Gaussian modes in end-pumped solid-state lasers for square vortex array laser beam generation.

PubMed

Chu, Shu-Chun; Chen, Yun-Ting; Tsai, Ko-Fan; Otsuka, Kenju

2012-03-26

This study reports the first systematic approach to the excitation of all high-order Hermite-Gaussian modes (HGMs) in end-pumped solid-state lasers. This study uses a metal-wire-inserted laser resonator accompanied with the "off axis pumping" approach. This study presents numerical analysis of the excitation of HGMs in end-pumped solid-state lasers and experimentally generated HGM patterns. This study also experimentally demonstrates the generation of an square vortex array laser beams by passing specific high-order HGMs (HGn,n + 1 or HGn + 1,n modes) through a Dove prism-embedded unbalanced Mach-Zehnder interferometer [Optics Express 16, 19934-19949]. The resulting square vortex array laser beams with embedded vortexes aligned in a square array can be applied to multi-spot dark optical traps in the future.

Subwavelength micropillar array terahertz lasers.

PubMed

Krall, Michael; Brandstetter, Martin; Deutsch, Christoph; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried; Unterrainer, Karl

2014-01-13

We report on micropillar-based terahertz lasers with active pillars that are much smaller than the emission wavelength. These micropillar array lasers correspond to scaled-down band-edge photonic crystal lasers forming an active photonic metamaterial. In contrast to photonic crystal lasers which use significantly larger pillar structures, lasing emission is not observed close to high-symmetry points in the photonic band diagram, but in the effective medium regime. We measure stimulated emission at 4 THz for micropillar array lasers with pillar diameters of 5 µm. Our results not only demonstrate the integration of active subwavelength optics in a terahertz laser, but are also an important step towards the realization of nanowire-based terahertz lasers.

Improved semi-conductor laser device, operating, at room temperature, with an array of three lasers in the spatially coherent, free running mode

NASA Technical Reports Server (NTRS)

Rutz, E. M.

1975-01-01

The peak pulse power was increased by operating an array of three homostructure Ga As lasers in the laser device. A spatial filter in the laser device selects the spatially coherent, free running, mode. The optical peak power is 5 watts, which is three times the peak power of a single laser in the array. The far-field distribution of the three laser array is a single Gaussian beam of spatial coherence without sidelobes or grating lobes. The length of the optical pulses of spatial coherence was increased to 200 ns by improved heat transfer from the p-n junctions of the lasers to the metal housing of the pulse transformer, and by doubling the core area and increasing the turns of the primary windings of the pulse transformer. The mechanical stability of the laser device was improved and the transition from mechanical alignment to electro-mechanical alignment control, was facilitated.

Interface module for transverse energy input to dye laser modules

DOEpatents

English, Jr., Ronald E.; Johnson, Steve A.

1994-01-01

An interface module (10) for transverse energy input to dye laser modules is provided particularly for the purpose of delivering enhancing transverse energy beams (36) in the form of illumination bar (54) to the lasing zone (18) of a dye laser device, in particular to a dye laser amplifier (12). The preferred interface module (10) includes an optical fiber array (30) having a plurality of optical fibers (38) arrayed in a co-planar fashion with their distal ends (44) receiving coherent laser energy from an enhancing laser source (46), and their proximal ends (4) delivered into a relay structure (3). The proximal ends (42) of the optical fibers (38) are arrayed so as to be coplanar and to be aimed generally at a common point. The transverse energy beam array (36) delivered from the optical fiber array (30) is acted upon by an optical element array (34) to produce an illumination bar (54) which has a cross section in the form of a elongated rectangle at the position of the lasing window (18). The illumination bar (54) is selected to have substantially uniform intensity throughout.

Theoretical analysis of phase locking in an array of globally coupled lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vysotskii, D V; Elkin, N N; Napartovich, A P

2013-09-30

A model of an array of globally coupled fibre lasers, with the same fraction of the total output beam power injected into each laser, is considered. Phase self-locking of the laser array makes it possible to increase the brightness of the total output beam without any devices for controlling the phases of output beams, which significantly complicate the laser system. The spread of the laser optical lengths is several hundreds of wavelengths (or even more); within the theory of hollow cavities, this spread should lead to a fast decrease in the total power with an increase in the number ofmore » lasers. The presence of the active medium may reduce this drop to a great extent due to the self-tuning of the laser array radiation wavelength to a value providing a maximum gain for the array lasing mode. The optical length of each element is assumed to be random. The increase in the phase-locking efficiency due to the gain saturation is explained based on the probabilistic approach. An iterative procedure is developed to find the array output power in the presence of steady-state phase locking. Calculations for different values of small-signal gain and the output-power fraction spent on global coupling are performed. It is shown that, when this fraction amounts to ∼20 % – 30 %, phase locking of up to 20 fibre lasers can be implemented with an efficiency as high as 70 %. (control of laser radiation parameters)« less

High-speed electronic beam steering using injection locking of a laser-diode array

NASA Astrophysics Data System (ADS)

Swanson, E. A.; Abbas, G. L.; Yang, S.; Chan, V. W. S.; Fujimoto, J. G.

1987-01-01

High-speed electronic steering of the output beam of a 10-stripe laser-diode array is reported. The array was injection locked to a single-frequency laser diode. High-speed steering of the locked 0.5-deg-wide far-field lobe is demonstrated either by modulating the injection current of the array or by modulating the frequency of the master laser. Closed-loop tracking bandwidths of 70 kHz and 3 MHz, respectively, were obtained. The beam-steering bandwidths are limited by the FM responses of the modulated devices for both techniques.

Prelaunch testing of the GEOS-3 laser reflector array

NASA Technical Reports Server (NTRS)

Minott, P. O.; Fitzmaurice, M. W.; Abshire, J. B.; Rowe, H. E.

1978-01-01

The prelaunch testing performed on the Geos-3 laser reflector array before launch was used to determine the lidar cross section of the array and the distance of the center of gravity of the satellite from the center of gravity of reflected laser pulses as a function of incidence angle. Experimental data are compared to computed results.

Efficient generation and transportation of energetic electrons in a carbon nanotube array target

NASA Astrophysics Data System (ADS)

Ji, Yanling; Jiang, Gang; Wu, Weidong; Wang, Chaoyang; Gu, Yuqiu; Tang, Yongjian

2010-01-01

Laser-driven energetic electron propagation in a carbon nanotube-array target is investigated using two-dimensional particle-in-cell simulations. Energetic electrons are efficiently generated when the array is irradiated by a short intense laser pulse. Confined and guided transportation of energetic electrons in the array is achieved by exploiting strong transient electromagnetic fields created at the wall surfaces of nanotubes. The underlying mechanisms are discussed in detail. Our investigation shows that the laser energy can be transferred more effectively to the target electrons in the array than that of in the flat foil due to the hole structures in the array.

High density pixel array

NASA Technical Reports Server (NTRS)

McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)

2004-01-01

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J. R.

1989-01-01

Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

Investigation of the Static and Dynamic Characteristics for a Wafer-Fused C-band VCSEL in the Mode of the Optical-Electric Converter

NASA Astrophysics Data System (ADS)

Belkin, M. E.

2018-01-01

The results of an experimental study for a long wavelength vertical cavity surface-emitting laser of a wafer-fused construction as an effective resonant cavity enhanced photodetector of analog optical signals are described. The device is of interest for a number of promising microwave photonics applications and for creation of a low-cost photoreceiver in a high-speed fiber optics telecommunication system with dense wavelength division multiplexing. The schematic of the testbed, the original technique allowing to calculate the passband of the built-in optical cavity, and the results of measuring dark current, current responsivity, amplitude- and phase-frequency characteristics during the process of photo-detection are demonstrated.

Sealed symmetric multilayered microelectronic device package with integral windows

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the windows being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic devices can be flip-chip bonded and oriented so that the light-sensitive sides are optically accessible through the windows. The result is a compact, low-profile, sealed symmetric package, having integral windows that can be hermetically-sealed.

Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

JSEP fellowship

NASA Astrophysics Data System (ADS)

Goodman, Alvin M.; Powers, Edward J.

1993-06-01

In this dissertation, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSEL's) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.

Low-cost laser diode array

DOEpatents

Freitas, B.L.; Skidmore, J.A.

1999-06-01

A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost. 19 figs.

Low-cost laser diode array

DOEpatents

Freitas, Barry L.; Skidmore, Jay A.

1999-01-01

A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost.

High-Reliability Pump Module for Non-Planar Ring Oscillator Laser

NASA Technical Reports Server (NTRS)

Liu, Duncan T.; Qiu, Yueming; Wilson, Daniel W.; Dubovitsky, Serge; Forouhar, Siamak

2007-01-01

We propose and have demonstrated a prototype high-reliability pump module for pumping a Non-Planar Ring Oscillator (NPRO) laser suitable for space missions. The pump module consists of multiple fiber-coupled single-mode laser diodes and a fiber array micro-lens array based fiber combiner. The reported Single-Mode laser diode combiner laser pump module (LPM) provides a higher normalized brightness at the combined beam than multimode laser diode based LPMs. A higher brightness from the pump source is essential for efficient NPRO laser pumping and leads to higher reliability because higher efficiency requires a lower operating power for the laser diodes, which in turn increases the reliability and lifetime of the laser diodes. Single-mode laser diodes with Fiber Bragg Grating (FBG) stabilized wavelength permit the pump module to be operated without a thermal electric cooler (TEC) and this further improves the overall reliability of the pump module. The single-mode laser diode LPM is scalable in terms of the number of pump diodes and is capable of combining hundreds of fiber-coupled laser diodes. In the proof-of-concept demonstration, an e-beam written diffractive micro lens array, a custom fiber array, commercial 808nm single mode laser diodes, and a custom NPRO laser head are used. The reliability of the proposed LPM is discussed.

Laser-phased-array beam steering based on crystal fiber

NASA Astrophysics Data System (ADS)

Yang, Deng-cai; Zhao, Si-si; Wang, Da-yong; Wang, Zhi-yong; Zhang, Xiao-fei

2011-06-01

Laser-phased-array system provides an elegant means for achieving the inertial-free, high-resolution, rapid and random beam steering. In laser-phased-array system, phase controlling is the most important factor that impacts the system performance. A novel scheme is provided in this paper, the beam steering is accomplished by using crystal fiber array, the difference length between adjacent fiber is fixed. The phase difference between adjacent fiber decides the direction of the output beam. When the wavelength of the input fiber laser is tuned, the phase difference between the adjacent elements has changed. Therefore, the laser beam direction has changed and the beam steering has been accomplished. In this article, based on the proposed scheme, the steering angle of the laser beam is calculated and analyzed theoretically. Moreover, the far-field steering beam quality is discussed.

Single laser beam of spatial coherence from an array of GaAs lasers - Free-running mode

NASA Technical Reports Server (NTRS)

Philipp-Rutz, E. M.

1975-01-01

Spatially coherent radiation from a monolithic array of three GaAs lasers in a free-running mode is reported. The lasers, with their mirror faces antireflection coated, are operated in an external optical cavity built of spherical lenses and plane mirrors. The spatially coherent-beam formation makes use of the Fourier-transformation property of the internal lenses. Transverse mode control is accomplished by a spatial filter. The optical cavity is similar to that used for the phase-controlled mode of spatially coherent-beam formation; only the spatial filters are different. In the far field (when restored by an external lens), the intensities of the lasers in the array are concentrated in a single laser beam of spatial coherence, without any grating lobes. The far-field distribution of the laser array in the free-running mode differs significantly from the interference pattern of the phase-controlled mode. The modulation characteristics of the optical waveforms of the two modes are also quite different because modulation is related to the interaction of the spatial filter with the longitudinal modes of the laser array within the optical cavity. The modulation of the optical waveform of the free-running mode is nonperiodic, confirming that the fluctuations of the optical fields of the lasers are random.

Qualification of Laser Diode Arrays for Mercury Laser Altimeter Mission

NASA Technical Reports Server (NTRS)

Stephen, Mark; Vasilyev, Aleksey; Schafer, John; Allan, Graham R.

2004-01-01

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. The MESSENGER mission is flying the Mercury Laser Altimeter (MLA) which is a diode-pumped Nd:YAG laser instrument designed to map the topography of Mercury. The environment imposed on the instrument by the orbital dynamics places special requirements on the laser diode arrays. In order to limit the radiative heating of the satellite from the surface of Mercury, the satellite is designed to have a highly elliptical orbit. The satellite will heat near perigee and cool near apogee. The laser power is cycled during these orbits so that the laser is on for only 30 minutes (perigee) in a 12 hour orbit. The laser heats 10 C while powered up and cools while powered down. In order to simulate these operational conditions, we designed a test to measure the LDA performance while being temperature and power cycled. Though the mission requirements are specific to NASA and performance requirements are derived from unique operating conditions, the results are general and widely applicable. We present results on the performance of twelve LDAs operating for several hundred million pulses. The arrays are 100 watt, quasi-CW, conductively-cooled, 808 nm devices. Prior to testing, we fully characterize each device to establish a baseline for individual array performance and status. Details of this characterization can be found in reference. Arrays are divided into four groups and subjected to the temperature and power cycling matrix are shown.

In-phased second harmonic wave array generation with intra-Talbot-cavity frequency-doubling.

PubMed

Hirosawa, Kenichi; Shohda, Fumio; Yanagisawa, Takayuki; Kannari, Fumihiko

2015-03-23

The Talbot cavity is one promising method to synchronize the phase of a laser array. However, it does not achieve the lowest array mode with the same phase but the highest array mode with the anti-phase between every two adjacent lasers, which is called out-phase locking. Consequently, their far-field images exhibit 2-peak profiles. We propose intra-Talbot-cavity frequency-doubling. By placing a nonlinear crystal in a Talbot cavity, the Talbot cavity generates an out-phased fundamental wave array, which is converted into an in-phase-locked second harmonic wave array at the nonlinear crystal. We demonstrate numerical calculations and experiments on intra-Talbot-cavity frequency-doubling and obtain an in-phase-locked second harmonic wave array for a Nd:YVO₄ array laser.

Ultrahigh speed endoscopic swept source optical coherence tomography using a VCSEL light source and micromotor catheter

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Han; Ahsen, Osman O.; Lee, Hsiang-Chieh; Liang, Kaicheng; Giacomelli, Michael G.; Potsaid, Benjamin M.; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Kraus, Martin F.; Hornegger, Joachim; Figueiredo, Marisa; Huang, Qin; Mashimo, Hiroshi; Cable, Alex E.; Fujimoto, James G.

2014-03-01

We developed an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor based imaging catheter, which provided an imaging speed of 600 kHz axial scan rate and 8 μm axial resolution in tissue. The micromotor catheter was 3.2 mm in diameter and could be introduced through the 3.7 mm accessory port of an endoscope. Imaging was performed at 400 frames per second with an 8 μm spot size using a pullback to generate volumetric data over 16 mm with a pixel spacing of 5 μm in the longitudinal direction. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing standard upper and lower endoscopy at the Veterans Affairs Boston Healthcare System (VABHS). Patients with Barrett's esophagus, dysplasia, and inflammatory bowel disease were imaged. The use of distally actuated imaging catheters allowed OCT imaging with more flexibility such as volumetric imaging in the terminal ileum and the assessment of the hiatal hernia using retroflex imaging. The high rotational stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face and cross-sectional imaging. The ability to perform 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies to investigate the ability of OCT to detect pathology as well as assess treatment response.

High duty cycle hard soldered kilowatt laser diode arrays

NASA Astrophysics Data System (ADS)

Klumel, Genady; Karni, Yoram; Oppenheim, Jacob; Berk, Yuri; Shamay, Moshe; Tessler, Renana; Cohen, Shalom

2010-02-01

High-brightness laser diode arrays operating at a duty cycle of 10% - 20% are in ever-increasing demand for the optical pumping of solid state lasers and directed energy applications. Under high duty-cycle operation at 10% - 20%, passive (conductive) cooling is of limited use, while micro-coolers using de-ionized cooling water can considerably degrade device reliability. When designing and developing actively-cooled collimated laser diode arrays for high duty cycle operation, three main problems should be carefully addressed: an effective local and total heat removal, a minimization of packaging-induced and operational stresses, and high-precision fast axis collimation. In this paper, we present a novel laser diode array incorporating a built-in tap water cooling system, all-hard-solder bonded assembly, facet-passivated high-power 940 nm laser bars and tight fast axis collimation. By employing an appropriate layout of water cooling channels, careful choice of packaging materials, proper design of critical parts, and active optics alignment, we have demonstrated actively-cooled collimated laser diode arrays with extended lifetime and reliability, without compromising their efficiency, optical power density, brightness or compactness. Among the key performance benchmarks achieved are: 150 W/bar optical peak power at 10% duty cycle, >50% wallplug efficiency and <1° collimated fast axis divergence. A lifetime of >0.5 Ghots with <2% degradation has been experimentally proven. The laser diode arrays have also been successfully tested under harsh environmental conditions, including thermal cycling between -20°C and 40°C and mechanical shocks at 500g acceleration. The results of both performance and reliability testing bear out the effectiveness and robustness of the manufacturing technology for high duty-cycle laser arrays.

Calculation of the force acting on a micro-sized particle with optical vortex array laser beam tweezers

NASA Astrophysics Data System (ADS)

Kuo, Chun-Fu; Chu, Shu-Chun

2013-03-01

Optical vortices possess several special properties, including carrying optical angular momentum (OAM) and exhibiting zero intensity. Vortex array laser beams have attracts many interests due to its special mesh field distributions, which show great potential in the application of multiple optical traps and dark optical traps. Previously study developed an Ince-Gaussian Mode (IGM)-based vortex array laser beam1. This study develops a simulation model based on the discrete dipole approximation (DDA) method for calculating the resultant force acting on a micro-sized spherical dielectric particle that situated at the beam waist of the IGM-based vortex array laser beams1.

Stretched Lens Array (SLA) for Collection and Conversion of Infrared Laser Light: 45% Efficiency Demonstrated for Near-Term 800 W/kg Space Power System

NASA Technical Reports Server (NTRS)

O'Neill, Mark; Howell, Joe; Fikes, John; Fork, Richard; Phillips, Dane; Aiken, Dan; McDanal, A. J.

2006-01-01

For the past 2% years, our team has been developing a unique photovoltaic concentrator array for collection and conversion of infrared laser light. This laser-receiving array has evolved from the solar-receiving Stretched Lens Array (SLA). The laser-receiving version of SLA is being developed for space power applications when or where sunlight is not available (e.g., the eternally dark lunar polar craters). The laser-receiving SLA can efficiently collect and convert beamed laser power from orbiting spacecraft or other sources (e.g., solar-powered lasers on the permanently illuminated ridges of lunar polar craters). A dual-use version of SLA can produce power from sunlight during sunlit portions of the mission, and from beamed laser light during dark portions of the mission. SLA minimizes the cost and mass of photovoltaic cells by using gossamer-like Fresnel lenses to capture and focus incoming light (solar or laser) by a factor of 8.5X, thereby providing a cost-effective, ultra-light space power system.

Improving Lifetime of Quasi-CW Laser Diode Arrays for Pumping 2-Micron Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Singh, Upendra N.; Kavaya, Michael J.

2007-01-01

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data on the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

Laser-assisted simultaneous transfer and patterning of vertically aligned carbon nanotube arrays on polymer substrates for flexible devices.

PubMed

In, Jung Bin; Lee, Daeho; Fornasiero, Francesco; Noy, Aleksandr; Grigoropoulos, Costas P

2012-09-25

We demonstrate a laser-assisted dry transfer technique for assembling patterns of vertically aligned carbon nanotube arrays on a flexible polymeric substrate. A laser beam is applied to the interface of a nanotube array and a polycarbonate sheet in contact with one another. The absorbed laser heat promotes nanotube adhesion to the polymer in the irradiated regions and enables selective pattern transfer. A combination of the thermal transfer mechanism with rapid direct writing capability of focused laser beam irradiation allows us to achieve simultaneous material transfer and direct micropatterning in a single processing step. Furthermore, we demonstrate that malleability of the nanotube arrays transferred onto a flexible substrate enables post-transfer tailoring of electric conductance by collapsing the aligned nanotubes in different directions. This work suggests that the laser-assisted transfer technique provides an efficient route to using vertically aligned nanotubes as conductive elements in flexible device applications.

Laser beam shaping design based on micromirror array

NASA Astrophysics Data System (ADS)

Fang, Han; Su, Bida; Liu, Jiaguo; Fan, Xiaoli; Jing, Wang

2017-10-01

In the practical application of the laser, it is necessary to use the laser beam shaping technology to shape the output beam of laser device to the uniform light intensity distribution. The shaping divergent optical system of compound eye integrator way is composed of beam expanding mirror group and lens array. Its working principle is to expand the output laser to a certain size of caliber, and then divide the beam with lens array into multiple sub beam, where the lens unit of lens array can control the divergence angle of sub beam through the design of focal length, with mutual superposition of the sub beam in far field, to make up for the nonuniformity of beam, so that the radiant exitance on the radiated surface may become uniform. In this paper, we use a reflective microlens array to realize the laser beam shaping. By through of the practical optical path model established, the ray tracing is carried out and the simulation results for single-mode Gaussian beam with noise circumstance is provided. The analysis results show that the laser beam shaping under different inputs can be effectively realized by use of microlens array. All the energy is within the signal window, with a high energy efficiency of more than 90%; The measured surface has a better uniformity, and the uniformity is better than 99.5% at 150m.

Effect of interface layer on the performance of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

2015-02-01

Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, Barry L.

1998-01-01

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver>4kW/cm2 of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources.

Coupled-mode analysis of gain and wavelength oscillation characteristics of diode laser phased arrays

NASA Technical Reports Server (NTRS)

Butler, J. K.; Ettenberg, M.; Ackley, D. E.

1985-01-01

The lasing wavelengths and gain characteristics of the modes of phase-locked arrays of channel-substrate-planar (CSP) lasers are presented. The gain values for the array modes are determined from complex coupling coefficients calculated using the fields of neighboring elements of the array. The computations show that, for index guided lasers which have nearly planar phase fronts, the highest order array mode will be preferred. The 'in-phase' or fundamental mode, which produces only one major lobe in the far-field radiation pattern, has the lowest modal gain of all array modes. The modal gain differential between the highest order and fundamental modes is less than 10/cm for weak coupling between the elements.

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, B.L.

1998-10-27

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver > 4kW/cm{sup 2} of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources. 13 figs.

Generation and use of high power 213 nm and 266 nm laser radiation and tunable 210-400 nm laser radiation with BBO crystal matrix array

DOEpatents

Gruen, Dieter M.

2000-01-01

A 213 nm laser beam is capable of single photon ablative photodecomposition for the removal of a polymer or biological material substrate. Breaking the molecular bonds and displacing the molecules away from the substrate in a very short time period results in most of the laser photon energy being carried away by the displaced molecules, thus minimizing thermal damage to the substrate. The incident laser beam may be unfocussed and is preferably produced by quintupling the 1064 nm radiation from a Nd:YAG solid state laser, i.e., at 213 nm. In one application, the 213 nm laser beam is expanded in cross section and directed through a plurality of small beta barium borate (BBO) crystals for increasing the energy per photon of the laser radiation directed onto the substrate. The BBO crystals are arranged in a crystal matrix array to provide a large laser beam transmission area capable of accommodating high energy laser radiation without damaging the BBO crystals. The BBO crystal matrix array may also be used with 266 nm laser radiation for carrying out single or multi photon ablative photodecomposition. The BBO crystal matrix array may also be used in an optical parametric oscillator mode to generate high power tunable laser radiation in the range of 210-400 nm.

Tailored nanopost arrays (NAPA) for laser desorption ionization in mass spectrometry

DOEpatents

Vertes, Akos; Walker, Bennett N.; Stolee, Jessica A.; Retterer, Scott T.

2016-11-08

The production and use of semiconducting nanopost arrays made by nanofabrication is described herein. These nanopost arrays (NAPA) provide improved laser ionization yields and controllable fragmentation with switching or modulation capabilities for mass spectrometric detection and identification of samples deposited on them.

Multilayered Microelectronic Device Package With An Integral Window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-10-26

A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

Ultrafast FADC multiplexer

NASA Astrophysics Data System (ADS)

Mirzoyan, R.; Cortina, J.; Lorenz, E.; Martinez, M.; Ostankov, A.; Paneque, D.

2002-10-01

Ultrafast Flash amplitude-to-digital converters (FADCs) are still very expensive. Here we propose a multiplexing scheme allowing one in common trigger mode to read out multiple signal sources by using a single FADC channel. Usual coaxial cables can be used in the multiplexer as analog signal delay elements. The limited bandwidth of the coaxial cable, depending on its type and length will set an upper limit to the number of multiplexed channels. Better bandwidth and the correspondingly higher number of multiplexed channels one can obtain when using the technique of transmission of analog signals via optical fibers. Low-cost vertical cavity surface emitting laser (VCSEL) diodes can be used as converters of fast electrical signals into near infrared light. Multiplexing can be an economically priced solution when one needs ultrafast digitization of hundreds of fast signal channels.

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

NASA Astrophysics Data System (ADS)

Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

2014-11-01

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.

Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers.

PubMed

Cao, J R; Lee, Po-Tsung; Choi, Sang-Jun; O'Brien, John D; Dapkus, P Daniel

2002-01-01

Lithographic tuning of operating wavelengths in a photonic crystal laser array is demonstrated. The photonic crystal lattice constant is varied by 2 nm between elements of the array, and a wavelength spacing of approximately 4 nm is achieved.

3D imaging LADAR with linear array devices: laser, detector and ROIC

NASA Astrophysics Data System (ADS)

Kameyama, Shumpei; Imaki, Masaharu; Tamagawa, Yasuhisa; Akino, Yosuke; Hirai, Akihito; Ishimura, Eitaro; Hirano, Yoshihito

2009-07-01

This paper introduces the recent development of 3D imaging LADAR (LAser Detection And Ranging) in Mitsubishi Electric Corporation. The system consists of in-house-made key devices which are linear array: the laser, the detector and the ROIC (Read-Out Integrated Circuit). The laser transmitter is the high power and compact planar waveguide array laser at the wavelength of 1.5 micron. The detector array consists of the low excess noise Avalanche Photo Diode (APD) using the InAlAs multiplication layer. The analog ROIC array, which is fabricated in the SiGe- BiCMOS process, includes the Trans-Impedance Amplifiers (TIA), the peak intensity detectors, the Time-Of-Flight (TOF) detectors, and the multiplexers for read-out. This device has the feature in its detection ability for the small signal by optimizing the peak intensity detection circuit. By combining these devices with the one dimensional fast scanner, the real-time 3D range image can be obtained. After the explanations about the key devices, some 3D imaging results are demonstrated using the single element key devices. The imaging using the developed array devices is planned in the near future.

Active hyperspectral imaging using a quantum cascade laser (QCL) array and digital-pixel focal plane array (DFPA) camera.

PubMed

Goyal, Anish; Myers, Travis; Wang, Christine A; Kelly, Michael; Tyrrell, Brian; Gokden, B; Sanchez, Antonio; Turner, George; Capasso, Federico

2014-06-16

We demonstrate active hyperspectral imaging using a quantum-cascade laser (QCL) array as the illumination source and a digital-pixel focal-plane-array (DFPA) camera as the receiver. The multi-wavelength QCL array used in this work comprises 15 individually addressable QCLs in which the beams from all lasers are spatially overlapped using wavelength beam combining (WBC). The DFPA camera was configured to integrate the laser light reflected from the sample and to perform on-chip subtraction of the passive thermal background. A 27-frame hyperspectral image was acquired of a liquid contaminant on a diffuse gold surface at a range of 5 meters. The measured spectral reflectance closely matches the calculated reflectance. Furthermore, the high-speed capabilities of the system were demonstrated by capturing differential reflectance images of sand and KClO₃ particles that were moving at speeds of up to 10 m/s.

1D array of dark spot traps formed by counter-propagating nested Gaussian laser beams for trapping and moving atomic qubits

NASA Astrophysics Data System (ADS)

Gillen-Christandl, Katharina; Frazer, Travis D.

2017-04-01

The standing wave of two identical counter-propagating Gaussian laser beams constitutes a 1D array of bright spots that can serve as traps for single neutral atoms for quantum information operations. Detuning the frequency of one of the beams causes the array to start moving, effectively forming a conveyor belt for the qubits. Using a pair of nested Gaussian laser beams with different beam waists, however, forms a standing wave with a 1D array of dark spot traps confined in all dimensions. We have computationally explored the trap properties and limitations of this configuration and, trading off trap depth and frequencies with the number of traps and trap photon scattering rates, we determined the laser powers and beam waists needed for useful 1D arrays of dark spot traps for trapping and transporting atomic qubits in neutral atom quantum computing platforms.

Numerical simulation of evaluation of surface breaking cracks by array-lasers generated narrow-band SAW

NASA Astrophysics Data System (ADS)

Dong, Li-Ming; Ni, Chen-Yin; Shen, Zhong-Hua; Ni, Xiao-Wu

2011-09-01

Most of the factors limiting the extensive application of laser-based ultrasonic for nondestructive evaluation of surface breaking crack are its poor sensitivity, low efficiency relative to conventional contact ultrasonic methods and limit on the dimension of the cracks. For this reason, a new technique that multiplepulse narrow-band ultrasound generated by laser arrays has been proposed. It is found that crack detection dependent on spectrum of narrow-band ultrasound generated by laser arrays can be operated with low amplitude requirements. In this paper, the narrow-band ultrasound generated by pulse laser arrays interacting with surface breaking cracks has been simulated in detail by the finite element method (FEM) according to the thermoelastic theory. The pulsed array lasers were assumed to be transient heat source, and the surface acoustic wave (SAW) which propagating on the top of the plate was computed based on thermoelastic theory. Then the frequency spectrums of both reflected waves by crack and transmission ones through crack were compared with the direct waves. Results demonstrate that multiple-frequency components of the narrow-band ultrasound were varied with change of the depth of surface breaking cracks significantly, which provides the possibility for precise evaluation of surface breaking cracks.

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator.

PubMed

Kim, Hyunseok; Lee, Wook-Jae; Farrell, Alan C; Balgarkashi, Akshay; Huffaker, Diana L

2017-09-13

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Advanced Fire Detector for Space Applications

NASA Technical Reports Server (NTRS)

Kutzner, Joerg

2012-01-01

A document discusses an optical carbon monoxide sensor for early fire detection. During the sensor development, a concept was implemented to allow reliable carbon monoxide detection in the presence of interfering absorption signals. Methane interference is present in the operating wavelength range of the developed prototype sensor for carbon monoxide detection. The operating parameters of the prototype sensor have been optimized so that interference with methane is minimized. In addition, simultaneous measurement of methane is implemented, and the instrument automatically corrects the carbon monoxide signal at high methane concentrations. This is possible because VCSELs (vertical cavity surface emitting lasers) with extended current tuning capabilities are implemented in the optical device. The tuning capabilities of these new laser sources are sufficient to cover the wavelength range of several absorption lines. The delivered carbon monoxide sensor (COMA 1) reliably measures low carbon monoxide levels even in the presence of high methane signals. The signal bleed-over is determined during system calibration and is then accounted for in the system parameters. The sensor reports carbon monoxide concentrations reliably for (interfering) methane concentrations up to several thousand parts per million.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

2006-01-01

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

Phased laser array with tailored spectral and coherence properties

DOEpatents

Messerly, Michael J [Danville, CA; Dawson, Jay W [Livermore, CA; Beach, Raymond J [Livermore, CA

2011-03-29

Architectures for coherently combining an array of fiber-based lasers are provided. By matching their lengths to within a few integer multiples of a wavelength, the spatial and temporal properties of a single large laser are replicated, while extending the average or peak pulsed power limit.

Phased laser array with tailored spectral and coherence properties

DOEpatents

Messerly, Michael J; Dawson, Jay W; Beach, Raymond J

2014-05-20

Architectures for coherently combining an array of fiber-based lasers are provided. By matching their lengths to within a few integer multiples of a wavelength, the spatial and temporal properties of a single large laser are replicated, while extending the average or peak pulsed power limit.

Optical transfer function of NTS-1 retroreflector array

NASA Technical Reports Server (NTRS)

Arnold, D. A.

1974-01-01

An optical transfer function was computed for the retroreflector array carried by the NTS-1 satellite. Range corrections are presented for extrapolating laser range measurements to the center of mass of the satellite. The gain function of the array was computed for use in estimating laser-echo signal strengths.

Quantitative measurement of oxygen in microgravity combustion

NASA Technical Reports Server (NTRS)

Silver, Joel A.

1995-01-01

This research combines two innovations in an experimental system which should result in a new capability for quantitative, nonintrusive measurement of major combustion species. Using a newly available vertical cavity surface-emitting diode laser (VCSEL) and an improved spatial scanning method, we plan to measure the temporal and spatial profiles of the concentrations and temperatures of molecular oxygen in a candle flame and in a solid fuel (cellulose sheet) system. The required sensitivity for detecting oxygen is achieved by the use of high frequency wavelength modulation spectroscopy (WMS). Measurements will be performed in the NASA Lewis 2.2-second Drop Tower Facility. The objective of this research is twofold. First, we want to develop a better understanding of the relative roles of diffusion and reaction of oxygen in microgravity combustion. As the primary oxidizer species, oxygen plays a major role in controlling the observed properties of flames, including flame front speed (in solid or liquid flames), extinguishment characteristics, flame size, and flame temperature. The second objective is to develop better diagnostics based on diode laser absorption which can be of real value in microgravity combustion research. We will also demonstrate diode lasers' potential usefulness for compact, intrinsically-safe monitoring sensors aboard spacecraft. Such sensors could be used to monitor any of the major cabin gases as well as important pollutants.

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

NASA Technical Reports Server (NTRS)

Savich, Gregory R.

2004-01-01

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Design of a patterned nanostructure array using a nanosecond pulsed laser

NASA Astrophysics Data System (ADS)

Yoshida, Yutaka; Ohnishi, Ko; Matsuo, Yasutaka; Watanabe, Seiichi

2018-04-01

For design the patterned nanostructure array (PNSA) on material surface using a nanosecond pulsed laser, we investigated the influence of phase shift between scattered lights on silicon (Si) substrate using 30-nm-wide gold lines (GLs) spacings. At a spacing of 5,871 nm, ten nanodot (ND) arrays were formed at intervals of 533 nm by nanosecond pulsed laser. The results show that the formation of the PNSA was affected by the resonance of scattered light. We conclude that ND arrays were formed with a spacing of Λ = nλ. And we have designed PNSA comprising two ND arrays on the substrate. The PNSA with dimensions of 1,600 nm × 1,600 nm was prepared using GLs.

Thermal Management of Quantum Cascade Lasers in an individually Addressable Array Architecture

DTIC Science & Technology

2016-02-08

Thermal Management of Quantum Cascade Lasers in an Individually Addressable Monolithic Array Architecture Leo Missaggia, Christine Wang, Michael...power laser systems in the mid-to-long-infrared wavelength range. By virtue of their demonstrated watt-level performance and wavelength diversity...quantum cascade laser (QCL) and amplifier devices are an excellent choice of emitter for those applications. To realize the power levels of interest

Generation of vortex array laser beams with Dove prism embedded unbalanced Mach-Zehnder interferometer

NASA Astrophysics Data System (ADS)

Chu, Shu-Chun

2009-02-01

This paper introduces a scheme for generation of vortex laser beams from a solid-state laser with off-axis laser-diode pumping. The proposed system consists of a Dove prism embedded in an unbalanced Mach-Zehnder interferometer configuration. This configuration allows controlled construction of p × p vortex array beams from Ince-Gaussian modes, IGep,p modes. An incident IGe p,p laser beam of variety order p can easily be generated from an end-pumped solid-state laser with an off-axis pumping mechanism. This study simulates this type of vortex array laser beam generation and discusses beam propagation effects. The formation of ordered transverse emission patterns have applications in a variety of areas such as optical data storage, distribution, and processing that exploit the robustness of soliton and vortex fields and optical manipulations of small particles and atoms in the featured intensity distribution.

Position and orientation tracking system

DOEpatents

Burks, Barry L.; DePiero, Fred W.; Armstrong, Gary A.; Jansen, John F.; Muller, Richard C.; Gee, Timothy F.

1998-01-01

A position and orientation tracking system presents a laser scanning appaus having two measurement pods, a control station, and a detector array. The measurement pods can be mounted in the dome of a radioactive waste storage silo. Each measurement pod includes dual orthogonal laser scanner subsystems. The first laser scanner subsystem is oriented to emit a first line laser in the pan direction. The second laser scanner is oriented to emit a second line laser in the tilt direction. Both emitted line lasers scan planes across the radioactive waste surface to encounter the detector array mounted on a target robotic vehicle. The angles of incidence of the planes with the detector array are recorded by the control station. Combining measurements describing each of the four planes provides data for a closed form solution of the algebraic transform describing the position and orientation of the target robotic vehicle.

Position and orientation tracking system

DOEpatents

Burks, B.L.; DePiero, F.W.; Armstrong, G.A.; Jansen, J.F.; Muller, R.C.; Gee, T.F.

1998-05-05

A position and orientation tracking system presents a laser scanning apparatus having two measurement pods, a control station, and a detector array. The measurement pods can be mounted in the dome of a radioactive waste storage silo. Each measurement pod includes dual orthogonal laser scanner subsystems. The first laser scanner subsystem is oriented to emit a first line laser in the pan direction. The second laser scanner is oriented to emit a second line laser in the tilt direction. Both emitted line lasers scan planes across the radioactive waste surface to encounter the detector array mounted on a target robotic vehicle. The angles of incidence of the planes with the detector array are recorded by the control station. Combining measurements describing each of the four planes provides data for a closed form solution of the algebraic transform describing the position and orientation of the target robotic vehicle. 14 figs.

Spectrally resolved modal characteristics of leaky-wave-coupled quantum cascade phase-locked laser arrays

NASA Astrophysics Data System (ADS)

Sigler, Chris; Gibson, Ricky; Boyle, Colin; Kirch, Jeremy D.; Lindberg, Donald; Earles, Thomas; Botez, Dan; Mawst, Luke J.; Bedford, Robert

2018-01-01

The modal characteristics of nonresonant five-element phase-locked arrays of 4.7-μm emitting quantum cascade lasers (QCLs) have been studied using spectrally resolved near- and far-field measurements and correlated with results of device simulation. Devices are fabricated by a two-step metal-organic chemical vapor deposition process and operate predominantly in an in-phase array mode near threshold, although become multimode at higher drive levels. The wide spectral bandwidth of the QCL's core region is found to be a factor in promoting multispatial-mode operation at high drive levels above threshold. An optimized resonant-array design is identified to allow sole in-phase array-mode operation to high drive levels above threshold, and indicates that for phase-locked laser arrays full spatial coherence to high output powers does not require full temporal coherence.

Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

DTIC Science & Technology

1987-09-01

laser diode arrays are intended to be used as an optical pump for solid state yttrium aluminum garnet (YAG) lasers. In particular, linear uniform...corresponds to about . , 8080A. Such thin layer structures, while difficult to grow by such conventional growth methods as liquid phase epitaxy ( LPE ...lower yet than for DH lasers grown by LPE . , - Conventional self-aligned stripe laser This structure is formed by growing (on an n-type GaAs substrate

Flexible crossbar-structured resistive memory arrays on plastic substrates via inorganic-based laser lift-off.

PubMed

Kim, Seungjun; Son, Jung Hwan; Lee, Seung Hyun; You, Byoung Kuk; Park, Kwi-Il; Lee, Hwan Keon; Byun, Myunghwan; Lee, Keon Jae

2014-11-26

Crossbar-structured memory comprising 32 × 32 arrays with one selector-one resistor (1S-1R) components are initially fabricated on a rigid substrate. They are transferred without mechanical damage via an inorganic-based laser lift-off (ILLO) process as a result of laser-material interaction. Addressing tests of the transferred memory arrays are successfully performed to verify mitigation of cross-talk on a plastic substrate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photonic heterostructure High Contrast Grating as a novel polarization control and light confinement system in HCG VCSEL

NASA Astrophysics Data System (ADS)

Gebski, M.; Dems, M.; Chen, J.; Qijie, W.; Dao Hua, Z.; Czyszanowski, T.

2014-05-01

In this paper we present results of computer optical simulations of VCSEL with modified high refractive index contrast grating (HCG) as a top mirror. We consider the HCG of two different designs which determine the lateral aperture. Such HCG mirror provides selective guiding effect. We show that proper design of aperture of HCG results in almost sixfold increase in cavity Q-factor for zero order mode and a discrimination of higher order modes.

Optoelectronic Materials Center, A Collaborative Program Including University of New Mexico, Stanford University and California Institute of Technology

DTIC Science & Technology

1993-05-04

a highly coherent output beam that can be focused’. MOCVD is used to fabricate the unstble resonator waveguide in these devices and to ensure a high...investigated. Single-mode VCSELs with excellent electrical characteristics were fabricated with a threshold voltage below 2V and an operating voltage of...resulting eye diagram shows that large-signal electrical modulation at 1-2 GB/s is possible. These VCSELs are therefore suitable for multi-GB/s optical

The Use of a Microcomputer Based Array Processor for Real Time Laser Velocimeter Data Processing

NASA Technical Reports Server (NTRS)

Meyers, James F.

1990-01-01

The application of an array processor to laser velocimeter data processing is presented. The hardware is described along with the method of parallel programming required by the array processor. A portion of the data processing program is described in detail. The increase in computational speed of a microcomputer equipped with an array processor is illustrated by comparative testing with a minicomputer.

Crosstalk analyse of DFB fiber laser hydrophone array based on time division multiplexing

NASA Astrophysics Data System (ADS)

Li, Yu; Huang, Junbin; Gu, Hongcan; Tang, Bo; Wu, Jing

2014-12-01

In this paper, the crosstalk of a time division multiplexed (TDM) system of distributed feedback (DFB) fiber laser (FL)hydrophones based on optical switch using Phase Generated Carrier (PGC) method was quantitatively analyzed. After mathematical deduction, the relationship among crosstalk, multiplexing scale and extinction ratio of optical switch was given. The simulation results show that to realize a TDM system of DFB fiber laser hydrophones with crosstalk lower than -40dB, the average extinction ratio should be higher than 24.78dB for a 4- channel system, while higher than 28.45dB for an 8- channel system. Two experiments to analyze the array crosstalk to a certain channel in an 8- channel array were conducted in this paper. Firstly, by testing the powers of leak laser to a certain channel from others, the array crosstalk to this channel was obtained according to the equation mathematically deduced in this paper. The result shows the array crosstalk to a certain channel of the 8-channel array was -7.6dB. An experiment of underwater acoustic detection was carried out finally to get the real array crosstalk to this certain channel, and the experimental result shows that the array crosstalk to this channel is -8.8dB, which is close to the calculated result.

Segmented amplifier configurations for laser amplifier

DOEpatents

Hagen, Wilhelm F.

1979-01-01

An amplifier system for high power lasers, the system comprising a compact array of segments which (1) preserves high, large signal gain with improved pumping efficiency and (2) allows the total amplifier length to be shortened by as much as one order of magnitude. The system uses a three dimensional array of segments, with the plane of each segment being oriented at substantially the amplifier medium Brewster angle relative to the incident laser beam and with one or more linear arrays of flashlamps positioned between adjacent rows of amplifier segments, with the plane of the linear array of flashlamps being substantially parallel to the beam propagation direction.

Optical transfer function of Starlette retroreflector array

NASA Technical Reports Server (NTRS)

Arnold, D. A.

1975-01-01

An optical transfer function was computed for the retroreflector array carried by the Starlette satellite (1975 10A). The range correction is given for extrapolating laser range measurements to the center of mass of the satellite. The gain function and active reflecting area of the array are computed for estimating laser-echo signal strengths.

Novel optical interconnect devices applying mask-transfer self-written method

NASA Astrophysics Data System (ADS)

Ishizawa, Nobuhiko; Matsuzawa, Yusuke; Tokiwa, Yu; Nakama, Kenichi; Mikami, Osamu

2012-01-01

The introduction of optical interconnect technology is expected to solve problems of conventional electric wiring. One of the promising technologies realizing optical interconnect is the self-written waveguide (SWW) technology with lightcurable resin. We have developed a new technology of the "Mask-Transfer Self-Written (MTSW)" method. This new method enables fabrication of arrayed M x N optical channels at one shot of UV-light. Using this technology, several new optical interconnect devices and connection technologies have been proposed and investigated. In this paper, first, we introduce MTSW method briefly. Next, we show plug-in alignment approach using optical waveguide plugs (OWP) and a micro-hole array (MHA) which are made of the light-curable resin. Easy and high efficiency plug-in alignment between fibers and an optoelectronic-printed wiring board (OE-PWB), between a fiber and a VCSEL, so on will be feasible. Then, we propose a new three-dimensional (3D) branch waveguide. By controlling the irradiating angle through the photomask aperture, it will be possible to fabricate 2-branch and 4-branch waveguides with a certain branch angle. The 3D branch waveguide will be very promising in the future optical interconnects and coupler devices of the multicore optical fiber.

Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays

DOEpatents

Vertes, Akos [Reston, VA; Chen, Yong [San Diego, CA

2011-12-27

The present invention provides a method of producing a laser-patterned silicon surface, especially silicon wafers for use in laser desorption ionization (LDI-MS) (including MALDI-MS and SELDI-MS), devices containing the same, and methods of testing samples employing the same. The surface is prepared by subjecting a silicon substrate to multiple laser shots from a high-power picosecond or femtosecond laser while in a processing environment, e.g., underwater, and generates a remarkable homogenous microcolumn array capable of providing an improved substrate for LDI-MS.

A simple laser locking system based on a field-programmable gate array.

PubMed

Jørgensen, N B; Birkmose, D; Trelborg, K; Wacker, L; Winter, N; Hilliard, A J; Bason, M G; Arlt, J J

2016-07-01

Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The locking system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.

A simple laser locking system based on a field-programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jørgensen, N. B.; Birkmose, D.; Trelborg, K.

Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The lockingmore » system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.« less

High-power laser diodes at various wavelengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emanuel, M.A.

High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at {approx}730 nm are presented.

Study on the near-field non-linearity (SMILE) of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

2018-02-01

High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

Low Power Ground-Based Laser Illumination for Electric Propulsion Applications

NASA Technical Reports Server (NTRS)

Lapointe, Michael R.; Oleson, Steven R.

1994-01-01

A preliminary evaluation of low power, ground-based laser powered electric propulsion systems is presented. A review of available and near-term laser, photovoltaic, and adaptive optic systems indicates that approximately 5-kW of ground-based laser power can be delivered at an equivalent one-sun intensity to an orbit of approximately 2000 km. Laser illumination at the proper wavelength can double photovoltaic array conversion efficiencies compared to efficiencies obtained with solar illumination at the same intensity, allowing a reduction in array mass. The reduced array mass allows extra propellant to be carried with no penalty in total spacecraft mass. The extra propellant mass can extend the satellite life in orbit, allowing additional revenue to be generated. A trade study using realistic cost estimates and conservative ground station viewing capability was performed to estimate the number of communication satellites which must be illuminated to make a proliferated system of laser ground stations economically attractive. The required number of satellites is typically below that of proposed communication satellite constellations, indicating that low power ground-based laser beaming may be commercially viable. However, near-term advances in low specific mass solar arrays and high energy density batteries for LEO applications would render the ground-based laser system impracticable.