Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

PubMed

Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

2018-06-19

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.

PubMed

Nguyen, Linh-Nam; Lan, Yann-Wen; Chen, Jyun-Hong; Chang, Tay-Rong; Zhong, Yuan-Liang; Jeng, Horng-Tay; Li, Lain-Jong; Chen, Chii-Dong

2014-05-14

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

Real-time reconstruction of topside ionosphere scale height from coordinated GPS-TEC and ionosonde observations

NASA Astrophysics Data System (ADS)

Gulyaeva, Tamara; Poustovalova, Ljubov

The International Reference Ionosphere model extended to the plasmasphere, IRI-Plas, has been recently updated for assimilation of total electron content, TEC, derived from observations with Global Navigation Satellite System, GNSS. The ionosonde products of the F2 layer peak density (NmF2) and height (hmF2) ensure true electron density maximum at the F2 peak. The daily solar and magnetic indices used by IRI-Plas code are compiled in data files including the 3-hour ap and kp magnetic index from 1958 onward, 12-monthly smoothed sunspot number R12 and Global Electron Content GEC12, daily solar radio flux F10.7 and daily sunspot number Ri. The 3-h ap-index is available in Real Time, RT, mode from GFZ, Potsdam, Germany, daily update of F10.7 is provided by Space Weather Canada service, and daily estimated international sunspot number Ri is provided by Solar Influences Data Analysis Center, SIDC, Belgium. For IRI-Plas-RT operation in regime of the daily update and prediction of the F2 layer peak parameters, the proxy kp and ap forecast for 3 to 24 hours ahead based on data for preceding 12 hours is applied online at http://www.izmiran.ru/services/iweather/. The topside electron density profile of IRI-Plas code is expressed with complementary half-peak density anchor height above hmF2 which corresponds to transition O+/H+ height. The present investigation is focused on reconstruction of topside ionosphere scale height using vertical total electron content (TEC) data derived from the Global Positioning System GPS observations and the ionosonde derived F2 layer peak parameters from 25 observatories ingested into IRI-Plas model. GPS-TEC and ionosonde measurements at solar maximum (September, 2002, and October, 2003) for quiet, positively disturbed, and negatively disturbed days of the month are used to obtain the topside scale height, Htop, representing the range of altitudes from hmF2 to the height where NmF2 decay by e times occurs. Mapping of the F2 layer peak parameters and TEC allows interpolate these parameters at coordinated grid sites from independent GPS receivers and ionosondes data. Exponential scale height Htop exceeds scale height HT of the α-Chapman layer by 3 times - the latter refers to a narrow altitude range from hmF2 to the height of 1.2 times decay of NmF2. While typical quiet daytime value of the topside scale height is around 200 km, it can be enhanced by 2-3 times during the negative phase of the ionospheric storm as it is captured by IRI-Plas-RT model ingesting the F2 peak and TEC data. This study is supported by the joint grant of RFBR 13-02-91370-CT_a and TUBITAK 112E568.

Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2.

PubMed

Huang, Wen; Luo, Xin; Gan, Chee Kwan; Quek, Su Ying; Liang, Gengchiau

2014-06-14

Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) are prototypical layered two-dimensional transition metal dichalcogenide materials, with each layer consisting of three atomic planes. We refer to each layer as a trilayer (TL). We study the thermoelectric properties of 1-4TL MoS2 and WSe2 using a ballistic transport approach based on the electronic band structures and phonon dispersions obtained from first-principles calculations. Our results show that the thickness dependence of the thermoelectric properties is different under n-type and p-type doping conditions. Defining ZT1st peak as the first peak in the thermoelectric figure of merit ZT as doping levels increase from zero at 300 K, we found that ZT1st peak decreases as the number of layers increases for MoS2, with the exception of 2TL in n-type doping, which has a slightly higher value than 1TL. However, for WSe2, 2TL has the largest ZT1st peak in both n-type and p-type doping, with a ZT1st peak value larger than 1 for n-type WSe2. At high temperatures (T > 300 K), ZT1st peak dramatically increases when the temperature increases, especially for n-type doping. The ZT1st peak of n-type 1TL-MoS2 and 2TL-WSe2 can reach 1.6 and 2.1, respectively.

An observational study of the nightside ionospheres of Mars and Venus with radio occultation methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, M.H.G.; Luhmann, J.G.; Kliore, A.J.

1990-10-01

An analysis of Mars and Venus nightside electron density profiles obtained with radio occultation methods shows how the nightside ionospheres of both planets vary with solar zenith angle. From previous studies it is known that the dayside peak electron densities at Mars and Venus show a basic similarity in that they both exhibit Chapman layer-like behavior. In contrast, the peak altitudes at mars behave like an ideal Chapman layer on the dayside, whereas the altitude of the peak at Venus is fairly constant up to the terminator. The effect of major dust storms can also be seen in the peakmore » altitudes at Mars. All Venus nightside electron density profiles show a distinct main peak for both solar minimum and maximum, whereas many profiles from the nightside of Mars do not show any peak at all. This suggests that the electron density in the Mars nightside ionosphere is frequently too low to be detected by radio occultation. On the Pioneer Venus orbiter, disappearing ionospheres were observed near solar maximum in the in-situ data when the solar wind dynamic pressure was exceptionally high. This condition occurs because the high solar wind dynamic pressure decreases the altitude of the ionopause near the terminator below {approximately}250 km, thus reducing the normal nightward transport of dayside ionospheric plasma. On the basis of the Venus observations, one might predict that if a positive correlation of nightside peak density with dynamic pressure was found, it could mean that transport from the dayside is the only significant source for the nightside ionosphere of Mars. The lack of a correlation would imply that the precipitation source at Mars is quite variable.« less

Topside ionosphere of Mars: Variability, transient layers, and the role of crustal magnetic fields

NASA Astrophysics Data System (ADS)

Gopika, P. G.; Venkateswara Rao, N.

2018-04-01

The topside ionosphere of Mars is known to show variability and transient topside layers. In this study, we analyzed the electron density profiles measured by the radio occultation technique aboard the Mars Global Surveyor spacecraft to study the topside ionosphere of Mars. The electron density profiles that we used in the present study span between 1998 and 2005. All the measurements are done from the northern high latitudes, except 220 profiles which were measured in the southern hemisphere, where strong crustal magnetic fields are present. We binned the observations into six measurement periods: 1998, 1999-north, 1999-south, 2000-2001, 2002-2003, and 2004-2005. We found that the topside ionosphere in the southern high latitudes is more variable than that from the northern hemisphere. This feature is clearly seen with fluctuations of wavelengths less than 20 km. Some of the electron density profiles show a transient topside layer with a local maximum in electron density between 160 km and 210 km. The topside layer is more prone to occur in the southern hemispheric crustal magnetic field regions than in the other regions. In addition, the peak density of the topside layer is greater in regions of strong crustal magnetic fields than in other regions. The variability of the topside ionosphere and the peak density of the topside layer, however, do not show one-to-one correlation with the strength of the crustal magnetic fields and magnetic field inclination. The results of the present study are discussed in the light of current understanding on the topside ionosphere, transient topside layers, and the role of crustal magnetic fields on plasma motions.

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

PubMed

Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

2014-03-11

Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

The turbulent plasmasphere boundary layer and the outer radiation belt boundary

NASA Astrophysics Data System (ADS)

Mishin, Evgeny; Sotnikov, Vladimir

2017-12-01

We report on observations of enhanced plasma turbulence and hot particle distributions in the plasmasphere boundary layer formed by reconnection-injected hot plasma jets entering the plasmasphere. The data confirm that the electron pressure peak is formed just outward of the plasmapause in the premidnight sector. Free energy for plasma wave excitation comes from diamagnetic ion currents near the inner edge of the boundary layer due to the ion pressure gradient, electron diamagnetic currents in the entry layer near the electron plasma sheet boundary, and anisotropic (sometimes ring-like) ion distributions revealed inside, and further inward of, the inner boundary. We also show that nonlinear parametric coupling between lower oblique resonance and fast magnetosonic waves significantly contributes to the VLF whistler wave spectrum in the plasmasphere boundary layer. These emissions represent a distinctive subset of substorm/storm-related VLF activity in the region devoid of substorm injected tens keV electrons and could be responsible for the alteration of the outer radiation belt boundary during (sub)storms.

Effect of Photogenerated Carriers on Ferroelectric Polarization Reversal

NASA Astrophysics Data System (ADS)

Weis, Martin; Li, Jun; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-12-01

Three non-symmetric switching peaks were observed in current-voltage (J-V) characteristic of the pentacene/poly(vinylidene fluoride-trifluoroethylene) double-layer device. However, upon illumination only two symmetric switching peaks appeared during the same J-V measurement. The similar difference between dark and illumination were also obtained in capacitance-voltage characteristics. These results showed the strong influence of internal fields by photogenerated carriers, which modifies the polarization reversal process of ferroelectric layer. The gradual shift of the polarization reversal with increase of illumination intensity is assigned to the space-charge field of trapped electrons.

Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer

NASA Astrophysics Data System (ADS)

Singh, Bharti; Mehta, B. R.; Govind, Feng, X.; Müllen, Klaus

2011-11-01

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect.

Role of electron back action on photons in hybridizing double-layer graphene plasmons with localized photons.

PubMed

Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey

2018-05-23

In this paper, we deal with the electromagnetic coupling between an incident surface-plasmon-polariton wave and relativistic electrons in two graphene layers. Our previous investigation was limited to single-layer graphene (Iurov et al 2017 Phys. Rev. B 96 081408). However, the present work, is both an expanded and extended version of this previous Phys. Rev. B paper after having included very detailed theoretical formalisms and extensive comparisons of results from either one or two graphene layers embedded in a dielectric medium. The additional retarded Coulomb interaction between two graphene layers will compete with the coupling between the single graphene layer and the surface of a conductor. Consequently, some distinctive features, such as triply-hybridized absorption peaks and a new acoustic-like graphene plasmon mode within the anticrossing region, have been found for the double-layer graphene system. Physically, our theory is self-consistent, in comparison with a commonly adopted perturbative theory, for studying hybrid light-plasmon modes and the electron back action on photons. Instead of usual radiation or grating-deflection field coupling, a surface-plasmon-polariton localized field coupling is introduced with completely different dispersion relations for radiative (small wave numbers) and evanescent (large wave numbers) field modes. Technically, the exactly calculated effective scattering matrix for this theory can be employed to construct an effective-medium theory in order to improve the accuracy of the well-known finite-difference time-domain method for solving Maxwell's equations numerically. Practically, the predicted triply-hybridized absorption peaks can excite polaritons only, giving rise to a possible polariton-condensation based laser.

Role of electron back action on photons in hybridizing double-layer graphene plasmons with localized photons

NASA Astrophysics Data System (ADS)

Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey

2018-05-01

In this paper, we deal with the electromagnetic coupling between an incident surface-plasmon-polariton wave and relativistic electrons in two graphene layers. Our previous investigation was limited to single-layer graphene (Iurov et al 2017 Phys. Rev. B 96 081408). However, the present work, is both an expanded and extended version of this previous Phys. Rev. B paper after having included very detailed theoretical formalisms and extensive comparisons of results from either one or two graphene layers embedded in a dielectric medium. The additional retarded Coulomb interaction between two graphene layers will compete with the coupling between the single graphene layer and the surface of a conductor. Consequently, some distinctive features, such as triply-hybridized absorption peaks and a new acoustic-like graphene plasmon mode within the anticrossing region, have been found for the double-layer graphene system. Physically, our theory is self-consistent, in comparison with a commonly adopted perturbative theory, for studying hybrid light-plasmon modes and the electron back action on photons. Instead of usual radiation or grating-deflection field coupling, a surface-plasmon-polariton localized field coupling is introduced with completely different dispersion relations for radiative (small wave numbers) and evanescent (large wave numbers) field modes. Technically, the exactly calculated effective scattering matrix for this theory can be employed to construct an effective-medium theory in order to improve the accuracy of the well-known finite-difference time-domain method for solving Maxwell’s equations numerically. Practically, the predicted triply-hybridized absorption peaks can excite polaritons only, giving rise to a possible polariton-condensation based laser.

Boundary-layer electron profiles for entry of a blunts slender body at high altitude

NASA Technical Reports Server (NTRS)

Evans, J. S.; Schexnayder, C. J., Jr.; Huber, P. W.

1973-01-01

New calculations of boundary-layer electron concentration profiles for entry of a blunt-nosed slender body into the earth's atmosphere are compared with previous calculations in which ambipolar diffusion was neglected. The old and new results agree in those flight regimes where ambipolar diffusion is unimportant, but large differences are noted in both peak electron concentration and profile shape at the higher altitudes, where diffusion effects are greatest. The new results are also compared with flight-measured profiles and with calculated profiles for a viscous-shock-layer theory which was recently reported in the literature. The boundary-layer results and the data agree in most respects. Differences which occur between predicted results and the data in the outer parts of the profile are discussed in terms of the effects of aerodynamic heating of the probes.

Fast Faraday fading of long range satellite signals.

NASA Technical Reports Server (NTRS)

Heron, M. L.

1972-01-01

20 MHz radio signals have been received during the day from satellite Beacon-B when it was below the optical horizon by using a bank of narrow filters to improve the signal to noise ratio. The Faraday fading rate becomes constant, under these conditions, at a level determined by the plasma frequency just below the F-layer peak. Variations in the Faraday fading rate reveal fluctuations in the electron density near the peak, while the rate of attaining the constant level depends on the shape of the electron density profile.

Hybrid Dye-Sensitized Solar Cells Consisting of Double Titania Layers for Harvesting Light with Wide Range of Wavelengths

NASA Astrophysics Data System (ADS)

Sadamasu, Kengo; Inoue, Takafumi; Ogomi, Yuhei; Pandey, Shyam S.; Hayase, Shuzi

2011-02-01

We report a hybrid dye-sensitized solar cell consisting of double titania layers (top and bottom layers) stained with two dyes. A top layer fabricated on a glass was mechanically pressed with a bottom layer fabricated on a glass cloth. The glass cloth acts as a supporter of a porous titania layer as well as a holder of electrolyte. The incident photon to current efficiency (IPCE) curve had two peaks corresponding to those of the two dyes, which demonstrates that electrons are collected from both the top and bottom layers.

Scanning electron microscopy as an analytical tool for the study of calcified intrauterine contraceptive devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, S.R.; Wilkinson, E.J.

Within the endometrial cavity intrauterine contraceptive devices (IUDs) become encrusted with cellular, acellular, and fibrillar substances. Scanning electron microscopy was used to study the crust. Cellular material consisted mainly of blood cells and various types of bacteria. The fibrillar material appeared to be fibrin which was omnipresent in the crust and formed a thin layer immediately over the IUD surface. X-ray microanalysis of the acellular component of the crust revealed the presence of calcium. No other major peaks were identified. Near the IUD surface characteristic calcium phosphate crystals were present. Their microanalysis showed peaks for calcium and phosphorus. X-ray diffractionmore » of the crust however, showed it to contain only calcite. It is through the use of scanning electron microscopy that calcium phosphate has been detected in the IUD crust and a fibrillar layer has been visualized on the IUD surface. This study further demonstrates the effectiveness of SEM analytical techniques in the area of biomedical research.« less

Supporting Structure of the LSD Wave in an Energy Absorption Perspective

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukui, Akihiro; Hatai, Keigo; Cho, Shinatora

In Repetitively Pulsed (RP) Laser Propulsion, laser energy irradiated to a vehicle is converted to blast wave enthalpy during the Laser Supported Detonation (LSD) regime. Based on the measured post-LSD electron number density profiles by two-wavelength Mach Zehnder interferometer in a line-focusing optics, electron temperature and absorption coefficient were estimated assuming Local Thermal Equilibrium. A 10J/pulse CO{sub 2} laser was used. As a result, laser absorption was found completed in the layer between the shock wave and the electron density peak. Although the LSD-termination timing was not clear from the shock-front/ionization-front separation in the shadowgraph images, there observed drastic changesmore » in the absorption layer thickness from 0.2 mm to 0.5 mm and in the peak heating rate from 12-17x10{sup 13} kW/m{sup 3} to 5x10{sup 13} kW/m{sup 3} at the termination.« less

Growth of InN on Ge substrate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Doolittle, W. Alan; Liu, Rong; Mei, Jin; Ponce, Fernando; Cheung, Maurice; Chen, Fei; Furis, Madalina; Cartwright, Alexander

2005-06-01

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1) InN∥(1 1 1) Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Layered composites of PEDOT/PSS/nanoparticles and PEDOT/PSS/phthalocyanines as electron mediators for sensors and biosensors

PubMed Central

García-Hernández, Celia; García-Cabezón, Cristina; Martín-Pedrosa, Fernando; De Saja, José Antonio

2016-01-01

The sensing properties of electrodes chemically modified with PEDOT/PSS towards catechol and hydroquinone sensing have been successfully improved by combining layers of PEDOT/PSS with layers of a secondary electrocatalytic material such as gold nanoparticles (PEDOT/PSS/AuNPs), copper phthalocyanine (PEDOT/PSS/CuPc) or lutetium bisphthalocyanine (PEDOT/PSS/LuPc2). Layered composites exhibit synergistic effects that strongly enhance the electrocatalytic activity as indicated by the increase in intensity and the shift of the redox peaks to lower potentials. A remarkable improvement has been achieved using PEDOT/PSS/LuPc2, which exhibits excellent electrocatalytic activity towards the oxidation of catechol. The kinetic studies demonstrated diffusion-controlled processes at the electrode surfaces. The kinetic parameters such as Tafel slopes and charge transfer coefficient (α) confirm the improved electrocatalytic activity of the layered electron mediators. The peak currents increased linearly with concentration of catechol and hydroquinone over the range of 1.5 × 10−4 to 4.0 × 10−6 mol·L−1 with a limit of detection on the scale of μmol·L−1. The layered composite hybrid systems were also found to be excellent electron mediators in biosensors containing tyrosinase and laccase, and they combine the recognition and biocatalytic properties of biomolecules with the unique catalytic features of composite materials. The observed increase in the intensity of the responses allowed detection limits of 1 × 10−7 mol·L−1 to be attained. PMID:28144543

Investigation on transmission and reflection characteristics of plasma array to 6 GHz high-power microwave

NASA Astrophysics Data System (ADS)

Yang, Liu; Yang, Zhongcun; Wan, Jianing; Liu, Hao

2016-10-01

For the safety of electronic equipment, a double-layer barrier of cylindrical plasma array was designed, and its protective performance to high-power microwave (HPM) were analyzed and the protective performance experiment was conducted. Combining the density distribution characteristic of the discharge plasma, the shielding effectiveness of the double-layer plasma on 6GHz HPM pulse was studied. The experiment results indicate that the protective effectiveness of two layers plasma array is better than that of one layer. Two layers plasma array can make the peak electric field of transmission waveform less than interference threshold of electronic equipment to achieve better protection effectiveness. Transmission attenuation of one layer and two layers plasma array to HPM can reach -6.6066dB and -24.9357dB. The results also show that for the existence of multiple reflection, even the plasma electron density is not high enough, it can realize a strong attenuation. The experiment results in this paper are of great significance in protecting against HPM and electromagnetic pulse.

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

NASA Astrophysics Data System (ADS)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

The Empirical Canadian High Arctic Ionospheric Model (E-CHAIM): Bottomside Parameterization

NASA Astrophysics Data System (ADS)

Themens, D. R.; Jayachandran, P. T.

2017-12-01

It is well known that the International Reference Ionosphere (IRI) suffers reduced accuracy in its representation of monthly median ionospheric electron density at high latitudes. These inaccuracies are believed to stem, at least in part, from a historical lack of data from these regions. Now, roughly thirty and forty years after the development of the original URSI and CCIR foF2 maps, respectively, there exists a much larger dataset of high latitude observations of ionospheric electron density. These new measurements come in the form of new ionosonde deployments, such as those of the Canadian High Arctic Ionospheric Network, the CHAMP, GRACE, and COSMIC radio occultation missions, and the construction of the Poker Flat, Resolute, and EISCAT Incoherent Scatter Radar systems. These new datasets afford an opportunity to revise the IRI's representation of the high latitude ionosphere. Using a spherical cap harmonic expansion to represent horizontal and diurnal variability and a Fourier expansion in day of year to represent seasonal variations, we have developed a new model of the bottomside ionosphere's electron density for the high latitude ionosphere, above 50N geomagnetic latitude. For the peak heights of the E and F1 layers (hmE and hmF1, respectively), current standards use a constant value for hmE and either use a single-parameter model for hmF1 (IRI) or scale hmF1 with the F peak (NeQuick). For E-CHAIM, we have diverged from this convention to account for the greater variability seen in these characteristics at high latitudes, opting to use a full spherical harmonic model description for each of these characteristics. For the description of the bottomside vertical electron density profile, we present a single-layer model with altitude-varying scale height. The scale height function is taken as the sum three scale height layer functions anchored to the F2 peak, hmF1, and hmE. This parameterization successfully reproduces the structure of the various bottomside layers while ensuring that the resulting electron density profile is free of strong vertical gradient artifacts and is doubly differentiable.

Avalanche photodiode for measurement of low-energy electrons

NASA Astrophysics Data System (ADS)

Ogasawara, K.; Asamura, K.; Mukai, T.; Saito, Y.

2005-06-01

We report on the performance of an Avalanche Photodiode (APD) produced by Hamamatsu Photonics Co. Ltd. (Type Z7966-20) for measurements of low energy electrons. We have set up an electron gun, which can generate a 1-20 keV electron beam impinging onto the APD in a vacuum chamber. The result shows that the pulse height distribution (PHD) of the APD signal exhibits a significant peak for electrons with energies above 8 keV, and the variation of the PHD peak shows a good linearity with the energy of incident electrons. The energy resolution is quite good, though it slightly depends on the electron energy. In the case of low-energies (lower than 10 keV), the pulse height distribution has a characteristic tail on the low energy side, and the energy resolution becomes a little worse. The position of the peak appears on a slightly lower channel than is expected from data at higher energies (near 20 keV). Qualitatively, the low-energy tail is caused by the dead-layer on the surface of the device. The nonlinearity and the worse resolution of the peaks for higher energy electrons may have resulted from a space-charge effect due to created e-h pairs. For a quantitative understanding, we have made a Monte Carlo particle simulation of charge transport and collection inside the APD.

Effect of an Electrochemically Oxidized ZnO Seed Layer on ZnO Nanorods Grown by using Electrodeposition

NASA Astrophysics Data System (ADS)

Jeon, Woosung; Leem, Jae-Young

2018-05-01

ZnO nanorods were prepared on a Si substrate with and without a ZnO seed layer formed by electro-oxidation to investigate the effect of the seed layer on their growth. The ZnO nanorods grown on the ZnO seed layer had top surfaces that were flat whereas those grown without it had rough top surfaces, as observed in field-emission scanning electron microscopy images. In the Xray diffraction analysis, all ZnO nanorods showed preferential orientation with the (002) plane. In the case of ZnO nanorods prepared with a ZnO seed layer, the residual stress decreased, and the full width at half maximum of the ZnO (002) plane peak decreased. The photoluminescence spectra show a strong and narrow near-band-edge emission peak and high near-band-edge emission to deep-level emission peak ratio for the ZnO nanorods prepared with the seed layer. With respect to the photoresponse properties, the ZnO nanorods grown with the ZnO seed layer showed higher responsivity and faster rise/decay curves than those grown without it. Thus, the ZnO seed layer formed by electro-oxidation improves the structural, optical, and photoresponse properties of the ZnO nanorods formed on it. This method could serve as a new route for improving the properties of optoelectronic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

McNeill, Jason Douglas

Electronic states of a thin layer of material on a surface possess unique physical and chemical properties. Some of these properties arise from the reduced dimensionality of the thin layer with respect to the bulk or the properties of the electric field where two materials of differing dielectric constants meet at an interface. Other properties are related to the nature of the surface chemical bond. Here, the properties of excess electrons in thin layers of Xenon, Krypton, and alkali metals are investigated, and the bound state energies and effective masses of the excess electrons are determined using two-photon photoemission. Formore » Xenon, the dependence of bound state energy, effective mass, and lifetime on layer thickness from one to nine layers is examined. Not all quantities were measured at each coverage. The two photon photoemission spectra of thin layers of Xenon on a Ag(111) substrate exhibit a number of sharp, well-defined peaks. The binding energy of the excess electronic states of Xenon layers exhibited a pronounced dependence on coverage. A discrete energy shift was observed for each additional atomic layer. At low coverage, a series of states resembling a Rydberg series is observed. This series is similar to the image state series observed on clean metal surfaces. Deviations from image state energies can be described in terms of the dielectric constant of the overlayer material and its effect on the image potential. For thicker layers of Xe (beyond the first few atomic layers), the coverage dependence of the features begins to resemble that of quantum well states. Quantum well states are related to bulk band states. However, the finite thickness of the layer restricts the perpendicular wavevector to a discrete set of values. Therefore, the spectrum of quantum well states contains a series of peaks which correspond to the various allowed values of the perpendicular wavevector. Analysis of the quantum well spectrum yields electronic band structure information. In this case, the quantum well states examined are derived from the Xenon conduction band. Measurements of the energies as a function of coverage yield the dispersion along the axis perpendicular to the surface while angle-resolved two-photon photoemission measurements yield information about dispersion along the surface parallel. The relative importance of the image potential and the overlayer band structure also depends on the quantum number and energy of the state. Some members of the image series may have an energy which is in an energy gap of the layer material, therefore such states may tend to remain physically outside the layer and retain much of their image character even at higher coverages. This is the case for the n = 1 image state of the Xe/Ag(111) system. The energies of image states which are excluded from the layer have a complex dependence on the thickness of the layer and its dielectric constant. The population decay kinetics of excited electronic states of the layer were also determined. Lifetimes are reported for the first three excited states for 1-6 atomic layers of Xe on Ag(111). As the image states evolve into quantum well states with increasing coverage, the lifetimes undergo an oscillation which marks a change in the spatial extent of the state. For example, the n = 2 quantum well state decreases substantially at 3-5 layers as the electron probability density in the layer increases. The lifetime data are modeled by extending the two-band nearly-free-electron approximation to account for the insulating Xe layer.« less

Intervalley double resonance processes in MoS2

NASA Astrophysics Data System (ADS)

Wang, Yuanxi; Carvalho, Bruno; Malard, Leandro; Fantini, Cristiano; Crespi, Vincent; Pimenta, Marcos

Intervalley scattering plays a significant role in electronic energy dissipation in semiconductors. We investigate the intervalley scattering of monolayer and few-layer MoS2, by combining density functional theory calculations and resonant Raman spectroscopy probed by up to 20 laser excitation energies. We observe that two Raman peaks within 420-460 cm-1 are dispersive over a small range of laser energy, a clear signature of second-order processes involving intervalley scattering. Both modes involve LA and TA phonons at or near the K point. A third Raman peak at 466 cm-1 shows a strong intensity dependence on the layer number and is assigned 2LA(M). Our results invalidate previous Raman peak assignment proposals and open up a better understanding of double resonance processes in transition metal dichalcogenides.

Potassium-doped n-type bilayer graphene

NASA Astrophysics Data System (ADS)

Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

2018-01-01

Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

Nano-carbon coating layer prepared by the thermal evaporation of fullerene C60 for lithium metal anodes in rechargeable lithium batteries.

PubMed

Arie, Arenst Andreas; Lee, Joong Kee

2011-07-01

A nano carbon coating layer was prepared by the thermal evaporation of fullerene C60 on the surface of lithium metal anodes for rechargeable lithium batteries. The morphology and structure of the carbon layer was firstly investigated by Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effects of the nano-carbon coating layer on the electrochemical performance of the lithium electrode were then examined by charge-discharge tests and impedance spectroscopy. Raman spectra of carbon coating layer showed two main peaks (D and G peaks), indicating the amorphous structure of the film. A honey comb-like structure of carbon film was observed by TEM photographs, providing a transport path for the transport of lithium ions at the electrode/electrolyte interface. The carbon coated lithium electrodes exhibited a higher initial coulombic efficiency (91%) and higher specific capacity retention (88%) after the 30th cycle at 0.2 C-rate between 3.4 and 4.5 V. Impedance measurements showed that the charge transfer resistance was significantly reduced after cycle tests for the carbon coated electrodes, revealing that the more stable solid electrolyte (SEI) layer was established on their surface. Based on the experimental results, it suggested that the presence of the nano-carbon coating layer might suppress the dendritic growth on the surface of lithium metal electrodes, as confirmed by the observation of SEM images after cycle tests.

X-ray absorption spectroscopy to determine originating depth of electrons that form an inelastic background of Auger electron spectrum

NASA Astrophysics Data System (ADS)

Isomura, Noritake; Cui, Yi-Tao; Murai, Takaaki; Oji, Hiroshi; Kimoto, Yasuji

2017-07-01

In Auger electron spectroscopy (AES), the spectral background is mainly due to inelastic scattering of Auger electrons that lose their kinetic energy in a sample bulk. To investigate the spectral components within this background for SiO2(19.3 nm)/Si(100) with known layer thickness, X-ray absorption spectroscopy (XAS) was used in the partial-electron-yield (PEY) mode at several electron kinetic energies to probe the background of the Si KLL Auger peak. The Si K-edge PEY-XAS spectra constituted of both Si and SiO2 components at each kinetic energy, and their component fractions were approximately the same as those derived from the simulated AES background for the same sample structure. The contributions of Auger electrons originating from layers at different depths to the inelastic background could thus be identified experimentally.

Synthesis, crystal and electronic structures and optical properties of (HIm) 2 Hg 3Cl 8 and (HIm)HgI 3 (HIm = imidazolium)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nhalil, Hariharan; Whiteside, Vincent R.; Sellers, Ian R.

Here, we report synthesis, crystal and electronic structures, and optical properties of two new Hg-based zero-dimensional hybrid organic-inorganic halides (HIm)2Hg3Cl8 and (HIm)HgI3 (HIm = imidazolium). (HIm) 2Hg 3Cl 8 crystallizes in the triclinic P-1 space group with a pseudo-layered structure made of organic imidazolium cation layers and anionic inorganic layers containing [Hg 2Cl 6] 2- units and linear [HgCl 2] 0 molecules. (HIm)HgI 3 crystallizes in the monoclinic P2 1/c space group featuring anionic [HgI 3]- units that are surrounded by imidazolium cations. Based on density functional theory calculations, (HIm) 2Hg 3Cl 8 has an indirect band gap, whereas (HIm)HgImore » 3 has a direct band gap with the measured onsets of optical absorption at 3.43 and 2.63 eV, respectively. (HIm) 2Hg 3Cl 8 and (HIm)HgI 3 are broadband light emitters with broad photoluminescence peaks centered at 548 nm (2.26 eV) and 582 nm (2.13 eV), respectively. In conclusion, following the crystal and electronic structure considerations, the PL peaks are assigned to self-trapped excitons.« less

Collocated ionosonde and dense GPS/GLONASS network measurements of midlatitude MSTIDs

NASA Astrophysics Data System (ADS)

Sherstyukov, R. O.; Akchurin, A. D.; Sherstyukov, O. N.

2018-04-01

To analyze midlatitude medium-scale travelling ionospheric disturbances (MSTIDs) over Kazan (55.5°N, 49°E), Russia, the sufficiently dense network of GNSS receivers (more than 150 ground-based stations) were used. For the first time, daytime MSTIDs in the form of their main signature (band structure) on high-resolution two-dimensional maps of the total electron content perturbation (TEC maps) are compared with ionosonde data with a high temporal resolution. For a pair of events, a relationship between southwestward TEC perturbations and evolution of F2 layer traces was established. So F2 peak frequency varied in antiphase to TEC perturbations. The ionograms show that during the movement of plasma depletion band (overhead ionosonde) the F2 peak frequency is the highest, and vice versa, for the plasma enhancement band, the F2 peak frequency is the lowest. One possible explanation may be a greater inclination of the radio beam from the vertical during the placement of a plasma enhancement band above the ionosonde, as evidenced by the absence of multiple reflections and the increased occurrence rate of additional cusp trace. Another possible explanation may be the redistribution of the electron content in the topside ionosphere with a small decrease in the F peak concentration of the layer with a small increase in TEC along the line-of-sight. Analysis of F2 peak frequency variation shows that observed peak-to-peak values of TEC perturbation equal to 0.4 and 1 TECU correspond to the values of ΔN/N equal to 13% and 28%. The need for further research is evident.

Semiconductor detector with smoothly tunable effective thickness for the study of ionization loss by moderately relativistic electrons

NASA Astrophysics Data System (ADS)

Shchagin, A. V.; Shul'ga, N. F.; Trofymenko, S. V.; Nazhmudinov, R. M.; Kubankin, A. S.

2016-11-01

The possibility of measurement of electrons ionization loss in Si layer of smoothly tunable thickness is shown in the proof-of-principle experiment. The Si surface-barrier detector with the depleted layer thickness controlled by the value of high voltage power supply has been used. Ionization loss spectra for electrons emitted by radioactive source 207Bi are presented and discussed. Experimental results for the most probable ionization loss in the Landau spectral peak are compared with theoretical calculations. The possibility of research of evolution of electromagnetic field of ultra-relativistic particles traversing media interface with the use of detectors with smoothly tunable thickness is proposed.

Empirical model for the electron density peak height disturbance in response to solar wind conditions

NASA Astrophysics Data System (ADS)

Blanch, E.; Altadill, D.

2009-04-01

Geomagnetic storms disturb the quiet behaviour of the ionosphere, its electron density and the electron density peak height, hmF2. Many works have been done to predict the variations of the electron density but few efforts have been dedicated to predict the variations the hmF2 under disturbed helio-geomagnetic conditions. We present the results of the analyses of the F2 layer peak height disturbances occurred during intense geomagnetic storms for one solar cycle. The results systematically show a significant peak height increase about 2 hours after the beginning of the main phase of the geomagnetic storm, independently of both the local time position of the station at the onset of the storm and the intensity of the storm. An additional uplift is observed in the post sunset sector. The duration of the uplift and the height increase are dependent of the intensity of the geomagnetic storm, the season and the local time position of the station at the onset of the storm. An empirical model has been developed to predict the electron density peak height disturbances in response to solar wind conditions and local time which can be used for nowcasting and forecasting the hmF2 disturbances for the middle latitude ionosphere. This being an important output for EURIPOS project operational purposes.

Characterization of microbially Fe(III)-reduced nontronite: Environmental cell-transmission electron microscopy study

USGS Publications Warehouse

Kim, Jin-wook; Furukawa, Yoko; Daulton, Tyrone L.; Lavoie, Dawn L.; Newell, Steven W.

2003-01-01

Microstructural changes induced by the microbial reduction of Fe(III) in nontronite by Shewanella oneidensis were studied using environmental cell (EC)-transmission electron microscopy (TEM), conventional TEM, and X-ray powder diffraction (XRD). Direct observations of clays by EC-TEM in their hydrated state allowed for the first time an accurate and unambiguous TEM measurement of basal layer spacings and the contraction of layer spacing caused by microbial effects, most likely those of Fe(III) reduction. Non-reduced and Fe(III)-reduced nontronite, observed by EC-TEM, exhibited fringes with mean d001 spacings of 1.50 nm (standard deviation, σ = 0.08 nm) and 1.26 nm (σ = 0.10 nm), respectively. In comparison, the same samples embedded with Nanoplast resin, sectioned by microtome, and observed using conventional TEM, displayed layer spacings of 1.0–1.1 nm (non-reduced) and 1.0 nm (reduced). The results from Nanoplast-embedded samples are typical of conventional TEM studies, which have measured nearly identical layer spacings regardless of Fe oxidation state. Following Fe(III) reduction, both EC- and conventional TEM showed an increase in the order of nontronite selected area electron diffraction patterns while the images exhibited fewer wavy fringes and fewer layer terminations. An increase in stacking order in reduced nontronite was also suggested by XRD measurements. In particular, the ratio of the valley to peak intensity (v/p) of the 1.7 nm basal 001 peak of ethylene glycolated nontronite was measured at 0.65 (non-reduced) and 0.85 (microbially reduced).

Novel Processes for Modular Integration of Silicon-Germanium MEMS with CMOS Electronics

DTIC Science & Technology

2007-02-28

process limits the compatibility with further lithography steps. Using silicon as the MEMS structural material, most of the integration processes...structures are defined by lithography and deep reactive ion etching. A layer of gasket oxide is deposited as the sacrificial material between the...When the Bragg condition for constructive interference is obtained, a diffraction peak is produced and the relative peak height is proportional to

Process Produces Low-Secondary-Electron-Emission Surfaces

NASA Technical Reports Server (NTRS)

Curren, A. N.; Jensen, K. A.; Roman, R. F.

1986-01-01

Textured carbon layer applied to copper by sputtering. Carbon surface characterized by dense, random array of needle-like spires or peaks that extend perpendicularly from local copper surface. Spires approximately 7 micrometers in height and spaced approximately 3 micrometers apart, on average. Copper substrate essentially completely covered by carbon layer, is tenacious and not damaged by vibration loadings representative of multistage depressed collector (MDC) applications. Process developed primarily to provide extremely low-secondary-electron-emission surface for copper for use as highefficiency electrodes in MDC's for microwave amplifier traveling-wave tubes (TWT's). Tubes widely used in space communications, aircraft, and terrestrial applications.

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer

2018-01-01

High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.

Polarized micro Raman spectroscopy of bilayer graphene

NASA Astrophysics Data System (ADS)

Moon, Hyerim; Yoon, Duhee; Son, Young-Woo; Cheong, Hyeonsik

2009-03-01

The frequency of Raman 2D band of the graphite depends on the excitation laser energy. This phenomenon is explained with double resonance Raman process. In polarized micro-Raman spectroscopy of single layer graphene, Raman G band (˜1586 cm-1) is isotropic, and 2D band (˜2686 cm-1) strongly depends on relative polarizations of the incident and scattered photons. This strong polarization dependence originates from inhomogeneous optical absorption and emission mediated by resonant electron-phonon interaction. In bi-layer graphene, Raman 2D band can be decomposed into four Lorenztian peaks which can be interpreted in terms of the four transition paths in the double resonance Raman process. We investigated the polarization dependence of each Lorenztian peak in the Raman 2D band of bi-layer graphene for different excitation laser energies. Strong polarization dependence of the Raman 2D band, similar to the case of single layer graphene, is observed. The excitation energy dependence of the polarized Raman scattering is analyzed in terms of the band structure of bi-layer graphene.

Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rusnan, Fara Naila; Mohamad, Khairul Anuar; Seria, Dzul Fahmi Mohd Husin

3,16-bis triisopropylsilylethynyl (Pentacene) (TIPS-Pentacene) compactable interface property is important in order to have a good arrangement of molecular structure. Comparison for TIPS-Pentacene deposited between two different surface layers conducted. 0.1wt% TIPS-Pentacene diluted in chloroform were deposited onto poly(methylmeaclyrate) (PMMA) layered transparent substrates using slide coating method. X-ray diffraction (XRD) used to determine crystallinity of thin films. Series of (00l) diffraction peaks obtained with sharp first peaks (001) for TIPS-Pentacene deposited onto PMMA layer at 5.35° and separation of 16.3 Å. Morphology and surface roughness were carried out using scanning electron microscope (SEM) and surface profilemeter LS500, respectively.TIPS-Pentacene deposited onto PMMAmore » layer formed needled-like-shape grains with 10.26 nm surface roughness. These properties were related as thin film formed and its surface roughness plays important role towards good mobility devices.« less

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

PubMed

Oyedele, Akinola D; Yang, Shize; Liang, Liangbo; Puretzky, Alexander A; Wang, Kai; Zhang, Jingjie; Yu, Peng; Pudasaini, Pushpa R; Ghosh, Avik W; Liu, Zheng; Rouleau, Christopher M; Sumpter, Bobby G; Chisholm, Matthew F; Zhou, Wu; Rack, Philip D; Geohegan, David B; Xiao, Kai

2017-10-11

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2 exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from 0 (bulk) to 1.3 eV (monolayer). The Raman-active vibrational modes of PdSe 2 were identified using polarized Raman spectroscopy, and a strong interlayer interaction was revealed from large, thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron field-effect mobility of ∼158 cm 2 V -1 s -1 , indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.

The determination of ionospheric electron content and distribution from satellite observations. Part 2. Results of the analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garriott, O K

1960-04-01

The results of observations of the radio transmissions from Sputnik III (1958 δ 2) in an 8-month period are presented. The measurements of integrated electron density are made in two ways, described in part 1. The measurements reveal the diurnal variation of the total ionospheric electron content; and the ratio of the total content to the content of the lower ionosphere below the height of maximum density in the F layer is obtained. An estimate of the average electron-density profile above the F-layer peak is made possible by the slow variation in the height of the satellite due to rotationmore » of the perigee position. The gross effects of large magnetic storms on the electron content and distribution are found.« less

In-depth evolution of chemical states and sub-10-nm-resolution crystal orientation mapping of nanograins in Ti(5 nm)/Au(20 nm)/Cr(3 nm) tri-layer thin films

NASA Astrophysics Data System (ADS)

Zhu, Xiaoli; Todeschini, Matteo; Bastos da Silva Fanta, Alice; Liu, Lintao; Jensen, Flemming; Hübner, Jörg; Jansen, Henri; Han, Anpan; Shi, Peixiong; Ming, Anjie; Xie, Changqing

2018-09-01

The applications of Au thin films and their adhesion layers often suffer from a lack of sufficient information about the chemical states of adhesion layers and about the high-lateral-resolution crystallographic morphology of Au nanograins. Here, we demonstrate the in-depth evolution of the chemical states of adhesive layers at the interfaces and the crystal orientation mapping of gold nanograins with a lateral resolution of less than 10 nm in a Ti/Au/Cr tri-layer thin film system. Using transmission electron microscopy, the variation in the interdiffusion at Cr/Au and Ti/Au interfaces was confirmed. From X-ray photoelectron spectroscopy (XPS) depth profiling, the chemical states of Cr, Au and Ti were characterized layer by layer, suggesting the insufficient oxidation of the adhesive layers. At the interfaces the Au 4f peaks shift to higher binding energies and this behavior can be described by a proposed model based on electron reorganization and substrate-induced final-state neutralization in small Au clusters supported by the partially oxidized Ti layer. Utilizing transmission Kikuchi diffraction (TKD) in a scanning electron microscope, the crystal orientation of Au nanograins between two adhesion layers was non-destructively characterized with sub-10 nm spatial resolution. The results provide nanoscale insights into the Ti/Au/Cr thin film system and contribute to our understanding of its behavior in nano-optic and nano-electronic devices.

Artificial stimulation of auroral electron acceleration by intense field aligned currents

NASA Technical Reports Server (NTRS)

Holmgren, G.; Bostrom, R.; Kelley, M. C.; Kintner, P. M.; Lundin, R.; Bering, E. A.; Sheldon, W. R.; Fahleson, U. V.

1979-01-01

A cesium-doped high explosion was detonated at 165 km altitude in the auroral ionosphere during quiet conditions. An Alfven wave pulse with a 200-mV/m electric field was observed, with the peak occurring 135 ms after the explosion at a distance of about 1 km. The count rate of fixed energy 2-keV electron detectors abruptly increased at 140 ms, peaked at 415 ms, and indicated a downward field-aligned beam of accelerated electrons. An anomalously high-field aligned beam of backscattered electrons was also detected. The acceleration is interpreted as due to production of an electrostatic shock or double layer between 300 and 800 km altitude. The structure was probably formed by an instability of the intense field-aligned currents in the Alfven wave launched by the charge-separation electric field due to the explosion.

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

NASA Astrophysics Data System (ADS)

Que, Yande; Xiao, Wende; Chen, Hui; Wang, Dongfei; Du, Shixuan; Gao, Hong-Jun

2015-12-01

The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

Equilibrium structure of the plasma sheet boundary layer-lobe interface

NASA Technical Reports Server (NTRS)

Romero, H.; Ganguli, G.; Palmadesso, P.; Dusenbery, P. B.

1990-01-01

Observations are presented which show that plasma parameters vary on a scale length smaller than the ion gyroradius at the interface between the plasma sheet boundary layer and the lobe. The Vlasov equation is used to investigate the properties of such a boundary layer. The existence, at the interface, of a density gradient whose scale length is smaller than the ion gyroradius implies that an electrostatic potential is established in order to maintain quasi-neutrality. Strongly sheared (scale lengths smaller than the ion gyroradius) perpendicular and parallel (to the ambient magnetic field) electron flows develop whose peak velocities are on the order of the electron thermal speed and which carry a net current. The free energy of the sheared flows can give rise to a broadband spectrum of electrostatic instabilities starting near the electron plasma frequency and extending below the lower hybrid frequency.

Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

NASA Astrophysics Data System (ADS)

Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

2018-04-01

Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

Observation of room temperature negative differential resistance in multi-layer heterostructures of quantum dots and conducting polymers.

PubMed

Kannan, V; Kim, M R; Chae, Y S; Ramana, Ch V V; Rhee, J K

2011-01-14

Multi-layer heterostructure negative differential resistance devices based on poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV) conducting polymer and CdSe quantum dots is reported. The conducting polymer MEH-PPV acts as a barrier while CdSe quantum dots form the well layer. The devices exhibit negative differential resistance (NDR) at low voltages. For these devices, strong negative differential resistance is observed at room temperature. A maximum value of 51 for the peak-to-valley ratio of current is reported. Tunneling of electrons through the discrete quantum confined states in the CdSe quantum dots is believed to be responsible for the multiple peaks observed in the I-V measurement. Depending on the observed NDR signature, operating mechanisms are explored based on resonant tunneling and Coulomb blockade effects.

Study of thermal stability of spontaneously grown superlattice structures by metalorganic vapor phase epitaxy in AlxGa1-xAs/GaAs heterostructure

NASA Astrophysics Data System (ADS)

Pradhan, A.; Maitra, T.; Mukherjee, S.; Mukherjee, S.; Satpati, B.; Nayak, A.; Bhunia, S.

2018-04-01

Spontaneous superlattice ordering in a length scale larger than an atomic layer has been observed in AlxGa1-xAs layers grown on (100) GaAs substrates by metalorganic vapor phase epitaxy. Transmission electron microscopic image clearly revealed superlattice structures and the selected area electron diffraction showed closely spaced superlattice spots around the main diffraction pattern. High resolution x-ray diffraction showed distinct and sharp superlattice peaks symmetrically positioned around the central (004) Bragg peak and the similar measurement for (002) planes, which is quasi-forbidden for Bragg reflections showed only superlattice peaks. Thermal annealing studies showed the superlattice structure was stable up to 800 °C and disappeared after annealing at 900 °C retaining the crystallinity of the epilayer. Study of inter-diffusivitiesin such superlattice structures has been carried out using high temperaturex-ray diffraction results. Here we present (004) x-ray θ-2θ scans of the AlGaAs/GaAs (100) sample with annealing time for different temperatures. Conclusions regarding interdiffusion in such superlattice structures are drawn from high temperature X-ray measurements.

Insight into the wetting of a graphene-mica slit pore with a monolayer of water

NASA Astrophysics Data System (ADS)

Lin, Hu; Schilo, Andre; Kamoka, A. Rauf; Severin, Nikolai; Sokolov, Igor M.; Rabe, Jürgen P.

2017-05-01

Scanning force microscopy (SFM) and Raman spectroscopy allow the unraveling of charge doping and strain effects upon wetting and dewetting of a graphene-mica slit pore with water. SFM reveals a wetting monolayer of water, slightly thinner than a single layer of graphene. The Raman spectrum of the dry pore exhibits the D' peak of graphene, which practically disappears upon wetting, and recurs when the water layer dewets the pore. Based on the 2 D - and G -peak positions, the corresponding peak intensities, and the widths, we conclude that graphene on dry mica is charge-doped and variably strained. A monolayer of water in between graphene and mica removes the doping and reduces the strain. We attribute the D' peak to direct contact of the graphene with the ionic mica surface in dry conditions, and we conclude that a complete monolayer of water wetting the slit pore decouples the graphene from the mica substrate both mechanically and electronically.

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

PubMed

Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

2008-11-01

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain.

PubMed

Song, Chaoyu; Fan, Fengren; Xuan, Ningning; Huang, Shenyang; Zhang, Guowei; Wang, Chong; Sun, Zhengzong; Wu, Hua; Yan, Hugen

2018-01-31

Because of the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-dependent band gap, spanning the visible and near infrared regions, and thus recently has been drawing tremendous attention. As a two-dimensional material, the mechanical flexibility provides an additional tuning knob for the electronic structures. Here, for the first time, we engineer the band structures of few-layer and bulk-like InSe by uniaxial tensile strain and observe a salient shift of photoluminescence peaks. The shift rate of the optical gap is approximately 90-100 meV per 1% strain for four- to eight-layer samples, which is much larger than that for the widely studied MoS 2 monolayer. Density functional theory calculations well reproduce the observed layer-dependent band gaps and the strain effect and reveal that the shift rate decreases with the increasing layer number for few-layer InSe. Our study demonstrates that InSe is a very versatile two-dimensional electronic and optoelectronic material, which is suitable for tunable light emitters, photodetectors, and other optoelectronic devices.

Role of surface energy on the morphology and optical properties of GaP micro & nano structures grown on polar and non-polar substrates

NASA Astrophysics Data System (ADS)

Roychowdhury, R.; Kumar, Shailendra; Wadikar, A.; Mukherjee, C.; Rajiv, K.; Sharma, T. K.; Dixit, V. K.

2017-10-01

Role of surface energy on the morphology, crystalline quality, electronic structure and optical properties of GaP layer grown on Si (001), Si (111), Ge (111) and GaAs (001) is investigated. GaP layers are grown on four different substrates under identical growth kinetics by metal organic vapour phase epitaxy. The atomic force microscopy images show that GaP layer completely covers the surface of GaAs substrate. On the other hand, the surfaces of Si (001), Si (111), Ge (111) substrates are partially covered with crystallographically morphed GaP island type micro and nano-structures. Origin of these crystallographically morphed GaP island is explained by the theoretical calculation of surface energy of the layer and corresponding substrates respectively. The nature of GaP island type micro and nano-structures and layers are single crystalline with existence of rotational twins on Si and Ge (111) substrates which is confirmed by the phi, omega and omega/2theta scans of high resolution x-ray diffraction. The electronic valence band offsets between the GaP and substrates have been determined from the valence band spectra of ultraviolet photoelectron spectroscopy. The valence electron plasmon of GaP are investigated by studying the energy values of Ga (3d) core level along with loss peaks in the energy dependent photoelectron spectra. The peak observed within the range of 3-6 eV from the Ga (3d) core level in the photoelectron spectra are associated to inter band transitions as their energy values are estimated from the pseudo dielectric function by the spectroscopic ellipsometry.

Ion composition during the formation of a midlatitude E sub S layer

NASA Technical Reports Server (NTRS)

Aikin, A. C.; Goldberg, R. A.; Azcarraga, A.

1973-01-01

The positive ion composition within a midlatitude sporadic E layer has been measured with the aid of a rocket-borne ion mass spectrometer launched from El Arenosillo, Spain on July 3, 1972 at 0743 LMT. Ionograms taken before and during the rocket flight showed a developing sporadic E layer near 114 km. Rocket data showed peaks in electron density and metallic ions at this same height. Both the maximum and total content of the metals are observed to be greater on the downleg than the upleg measurement.

Patterning of graphene for flexible electronics with remote atmospheric-pressure plasma using dielectric barrier

NASA Astrophysics Data System (ADS)

Kim, Duk Jae; Park, Jeongwon; Geon Han, Jeon

2016-08-01

We show results of the patterning of graphene layers on poly(ethylene terephthalate) (PET) films through remote atmospheric-pressure dielectric barrier discharge plasma. The size of plasma discharge electrodes was adjusted for large-area and role-to-role-type substrates. Optical emission spectroscopy (OES) was used to analyze the characteristics of charge species in atmospheric-pressure plasma. The OES emission intensity of the O2* peaks (248.8 and 259.3 nm) shows the highest value at the ratio of \\text{N}2:\\text{clean dry air (CDA)} = 100:1 due to the highest plasma discharge. The PET surface roughness and hydrophilic behavior were controlled with CDA flow rate during the process. Although the atmospheric-pressure plasma treatment of the PET film led to an increase in the FT-IR intensity of C-O bonding at 1240 cm-1, the peak intensity at 1710 cm-1 (C=O bonding) decreased. The patterning of graphene layers was confirmed by scanning electron microscopy and Raman spectroscopy.

IRI STORM validation over Europe

NASA Astrophysics Data System (ADS)

Haralambous, Haris; Vryonides, Photos; Demetrescu, Crişan; Dobrică, Venera; Maris, Georgeta; Ionescu, Diana

2014-05-01

The International Reference Ionosphere (IRI) model includes an empirical Storm-Time Ionospheric Correction Model (STORM) extension to account for storm-time changes of the F layer peak electron density (NmF2) during increased geomagnetic activity. This model extension is driven by past history values of the geomagnetic index ap (The magnetic index applied is the integral of ap over the previous 33 hours with a weighting function deduced from physically based modeling) and it adjusts the quiet-time F layer peak electron density (NmF2) to account for storm-time changes in the ionosphere. In this investigation manually scaled hourly values of NmF2 measured during the main and recovery phases of selected storms for the maximum solar activity period of the current solar cycle are compared with the predicted IRI-2012 NmF2 over European ionospheric stations using the STORM model option. Based on the comparison a subsequent performance evaluation of the STORM option during this period is quantified.

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

PubMed

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

A new inversion algorithm for HF sky-wave backscatter ionograms

NASA Astrophysics Data System (ADS)

Feng, Jing; Ni, Binbin; Lou, Peng; Wei, Na; Yang, Longquan; Liu, Wen; Zhao, Zhengyu; Li, Xue

2018-05-01

HF sky-wave backscatter sounding system is capable of measuring the large-scale, two-dimensional (2-D) distributions of ionospheric electron density. The leading edge (LE) of a backscatter ionogram (BSI) is widely used for ionospheric inversion since it is hardly affected by any factors other than ionospheric electron density. Traditional BSI inversion methods have failed to distinguish LEs associated with different ionospheric layers, and simply utilize the minimum group path of each operating frequency, which generally corresponds to the LE associated with the F2 layer. Consequently, while the inversion results can provide accurate profiles of the F region below the F2 peak, the diagnostics may not be so effective for other ionospheric layers. In order to resolve this issue, we present a new BSI inversion method using LEs associated with different layers, which can further improve the accuracy of electron density distribution, especially the profile of the ionospheric layers below the F2 region. The efficiency of the algorithm is evaluated by computing the mean and the standard deviation of the differences between inverted parameter values and true values obtained from both vertical and oblique incidence sounding. Test results clearly manifest that the method we have developed outputs more accurate electron density profiles due to improvements to acquire the profiles of the layers below the F2 region. Our study can further improve the current BSI inversion methods on the reconstruction of 2-D electron density distribution in a vertical plane aligned with the direction of sounding.

PdSe 2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyedele, Akinola D.; Yang, Shize; Liang, Liangbo

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2, exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from ~0 (bulk) to ~1.3 eV (monolayer). The Raman active vibrational modes of PdSe 2 were identified using polarizedmore » Raman spectroscopy, and the strong interlayer interaction was revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron apparent field-effect mobility of ~158 cm 2V -1s -1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.« less

PdSe 2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

DOE PAGES

Oyedele, Akinola D.; Yang, Shize; Liang, Liangbo; ...

2017-09-05

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2, exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from ~0 (bulk) to ~1.3 eV (monolayer). The Raman active vibrational modes of PdSe 2 were identified using polarizedmore » Raman spectroscopy, and the strong interlayer interaction was revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron apparent field-effect mobility of ~158 cm 2V -1s -1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ostapenko, Marina G., E-mail: artifakt@ispms.tsc.ru; Meisner, Ludmila L., E-mail: llm@ispms.tsc.ru; Lotkov, Aleksandr I., E-mail: lotkov@ispms.tsc.ru, E-mail: egu@ispms.tsc.ru

In the work, we study the mechanisms of structural phase state formation in NiTi surface layers after low-energy pulsed electron beam irradiation depending on the electron beam energy density. It is revealed that after electron beam treatment of the NiTi specimens at energy densities E{sub 1} = 15 J/cm{sup 2}, E{sub 2} = 20 J/cm{sup 2}, and E{sub 3} = 30 J/cm{sup 2}, a series of effects is observed: the absence of the Ti2Ni phase and the presence of new peaks correspond to the B19′ martensite phase with monoclinic structure. Estimation of the relative volume content of the B2 andmore » B19′ phases from the total intensity of their peaks shows that the percentage of the martensite phase increases from ∼5 vol.% in the NiTi specimen irradiated at E{sub 1} = 15 J/cm{sup 2} to ∼80 vol.% in the NiTi specimen irradiated at E{sub 3} = 30 J/cm{sup 2}. It is found that in the NiTi specimens irradiated at E ≤ 20 J/cm{sup 2}, the layer that contains a martensite phase resides not on the surface but at some depth from it.« less

Effects of strain and thickness on the electronic and optical behaviors of two-dimensional hexagonal gallium nitride

NASA Astrophysics Data System (ADS)

Behzad, Somayeh

2017-06-01

The full potential linearized augmented plane wave (FP-LAPW) method within the framework of density functional theory has been used to study effects of strain and thickness on the electronic and optical properties of two-dimensional GaN. The band gap of monolayer and bilayer GaN under compressive in-plane strain change from indirect to direct with bond length shortening. Also, the semiconductor to semimetal transition occurs for monolayer and bilayer GaN under in-plane tensile strain with bond length elongation. It is found that the tensile and compressive strains cause the red and blue shifts in the optical spectra, respectively, for both monolayer and bilayer GaN. Applying the perpendicular strain on the bilayer GaN by decreasing the inter layer distance leads to the shift of valence band maximum towards the Γ point in the band structure and shift of peak positions and variation of peak intensities in ε2(ω) spectrum. The results show that the n-layer GaN has an indirect band gap for n < 16. The results suggest that monolayer and multilayer GaN are good candidates for application in optoelectronics and flexible electronics.

Experimental study of a free turbulent shear flow at Mach 19 with electron-beam and conventional probes. [flow measurement

NASA Technical Reports Server (NTRS)

Harvey, W. P.; Hunter, W. D., Jr.

1975-01-01

An experimental study of the initial development region of a hypersonic turbulent free mixing layer was made. Data were obtained at three stations downstream of a M = 19 nozzle over a Reynolds range of 1.3 million to 3.3 million per meter and at a total temperature of about 1670 K. In general, good agreement was obtained between electron-beam and conventional probe measurements of local mean flow parameters. Measurements of fluctuating density indicated that peak root-mean-square (rms) levels are higher in the turbulent free mixing layer than in boundary layers for Mach numbers less than 9. The intensity of rms density fluctuations in the free stream is similar in magnitude to pressure fluctuations in high Mach number flows. Spectrum analyses of the measured fluctuating density through the shear layer indicate significant fluctuation energy at the lower frequencies (0.2 to 5 kHZ) which correspond to large-scale disturbances in the high-velocity region of the shear layer.

Estimates of nonequilibrium radiation for Venus entry. [generated by chemical reactions in shock layers

NASA Technical Reports Server (NTRS)

Grose, W. L.; Nealy, J. E.

1975-01-01

The present investigation is an analysis of the radiation from the chemical nonequilibrium region in the shock layer about a vehicle during Venus entry. The radiation and the flow were assumed to be uncoupled. An inviscid, nonequilibrium flowfield was calculated and an effective electronic temperature was determined for the predominant radiating species. Species concentrations and electronic temperature were then input into a radiation transport code to calculate heating rates. The present results confirm earlier investigations which indicate that the radiation should be calculated using electronic temperatures for the radiating species. These temperatures are not related in a simple way to the local translational temperature. For the described mission, the nonequilibrium radiative heating rate is approximately twice the corresponding equilibrium value at peak heating.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Z-scan studies of the nonlinear optical properties of gold nanoparticles prepared by electron beam deposition.

PubMed

Mezher, M H; Nady, A; Penny, R; Chong, W Y; Zakaria, R

2015-11-20

This paper details the fabrication process for placing single-layer gold (Au) nanoparticles on a planar substrate, and investigation of the resulting optical properties that can be exploited for nonlinear optics applications. Preparation of Au nanoparticles on the substrate involved electron beam deposition and subsequent thermal dewetting. The obtained thin films of Au had a variation in thicknesses related to the controllable deposition time during the electron beam deposition process. These samples were then subjected to thermal annealing at 600°C to produce a randomly distributed layer of Au nanoparticles. Observation from field-effect scanning electron microscope (FESEM) images indicated the size of Au nanoparticles ranges from ∼13 to ∼48  nm. Details of the optical properties related to peak absorption of localized surface plasmon resonance (LSPR) of the nanoparticle were revealed by use of UV-Vis spectroscopy. The Z-scan technique was used to measure the nonlinear effects on the fabricated Au nanoparticle layers where it strongly relates LSPR and nonlinear optical properties.

Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

NASA Technical Reports Server (NTRS)

Ferrante, J.

1973-01-01

Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Que, Yande; Xiao, Wende, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn; Chen, Hui

The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- andmore » ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.« less

Reflection of Low Energy Positrons from the Surface of Highly Oriented Pyrolytic Graphite and Single Layer Graphene.

NASA Astrophysics Data System (ADS)

Imam, S. K.; Chirayath, V. A.; Chrysler, M. D.; Fairchild, A. J.; Gladen, R. W.; Koymen, A. R.; Weiss, A. H.; UT Arlington Positron Surface Laboratory Team

A time of flight positron annihilation induced Auger electron spectrometer (TOF-PAES) was utilized to measure the reflection of positrons as a function of incident positron energy (0 to 10 eV) from the surface of highly oriented pyrolytic graphite (HOPG) and from a single layer graphene (SLG) on a Cu foil. A NaI scintillation detector was used to measure the annihilation gamma from the reflected positrons as a function of incident positron kinetic energy. The annihilation of the positrons on HOPG and SLG were simultaneously measured using another NaI detector near the sample. The Auger electrons emitted as a result of the annihilation of positrons from the surface of the sample were also measured concurrently. As the positron kinetic energy was increased, the number of reflected positrons calculated from the intensity under the annihilation gamma peak showed a steady decrease. The positronium formation measured at the sample using the gamma spectrum showed a peak at 6 eV. The intensity of the carbon KVV Auger peak showed a dip at the same energy. The correlation of the three signals, intensity of reflected positrons, positrons annihilating at the sample and the Auger intensity are discussed for both samples. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

h -AlN-Mg(OH)2 van der Waals bilayer heterostructure: Tuning the excitonic characteristics

NASA Astrophysics Data System (ADS)

Bacaksiz, C.; Dominguez, A.; Rubio, A.; Senger, R. T.; Sahin, H.

2017-02-01

Motivated by recent studies that reported the successful synthesis of monolayer Mg (OH) 2 [Suslu et al., Sci. Rep. 6, 20525 (2016), 10.1038/srep20525] and hexagonal (h -)AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013), 10.1063/1.4851239], we investigate structural, electronic, and optical properties of vertically stacked h -AlN and Mg (OH) 2 , through ab initio density-functional theory (DFT), many-body quasiparticle calculations within the GW approximation and the Bethe-Salpeter equation (BSE). It is obtained that the bilayer heterostructure prefers the A B' stacking having direct band gap at the Γ with Type-II band alignment in which the valance band maximum and conduction band minimum originate from different layer. Regarding the optical properties, the imaginary part of the dielectric function of the individual layers and heterobilayer are investigated. The heterobilayer possesses excitonic peaks, which appear only after the construction of the heterobilayer. The lowest three exciton peaks are analyzed in detail by means of band decomposed charge density and the oscillator strength. Furthermore, the wave function calculation shows that the first peak of the heterobilayer originates from spatially indirect exciton where the electron and hole localized at h -AlN and Mg (OH) 2 , respectively, which is important for the light harvesting applications.

A statistical study on the F2 layer vertical variation during nighttime medium-scale traveling ionospheric disturbances

NASA Astrophysics Data System (ADS)

Ssessanga, Nicholas; Kim, Yong Ha; Jeong, Se-Heon

2017-03-01

A statistical study on the relationship between the perturbation component (ΔTEC (total electron content)) and the F2 layer peak height (hmF2) during nighttime medium-scale traveling ionospheric disturbances is presented. The results are obtained by using a time-dependent computerized ionospheric tomography (CIT) technique. This was realized by using slant total electron content observations from a dense Global Positioning System receiver network over Japan (with more than 1000 receivers), together with a multiplicative algebraic reconstruction technique. Reconstructions from CIT were validated by using ionosonde and occultation measurements. A total of 36 different time snapshots of the ionosphere when medium-scale traveling ionospheric disturbances (MSTIDs) were eminent were analyzed. These were obtained from a data set covering years from 2011 to 2014. The reconstructed surface wavefronts of ΔTEC and hmF2 structure were found to be aligned along the northwest-southeast direction. These results confirm that nighttime MSTIDs are driven by electrodynamic forces related to Perkins instability which explains the northwest-southeast wavefront alignment based on the F region electrodynamics. Furthermore, from the statistical analysis hmF2 varied quasiperiodically in altitude with dominant peak-to-peak amplitudes between 10 and 40 km. In addition, ΔTEC and hmF2 were 60% anticorrelated.

Deuterium retention and release behaviours of tungsten and deuterium co-deposited layers

NASA Astrophysics Data System (ADS)

Qiao, L.; Zhang, H. W.; Xu, J.; Chai, L. Q.; Hu, M.; Wang, P.

2018-04-01

Tungsten (W) layer deposited in argon and deuterium atmosphere by magnetron sputtering was used as a model system to study the deuterium (D) retention and release behavior in co-deposited W layer. After deposition several selected samples were exposed in deuterium plasma at 370 K with a flux of 4.0 × 1021 D/(m2 s) up to a fluence of 1.1 × 1025 D/m2. Structures of co-deposited W layers are investigated by field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD), and the corresponding D retention and release behaviors are studied as functions of deposition and exposure parameters using thermal desorption spectroscopy (TDS). Two main D release peaks were detected from TDS spectra located near 600 and 800 K in these W and D co-deposited layers, and total deuterium retention increased linearly as a function of W layer's thickness. After deuterium plasma exposure, the total D retention amount in W layer increases significantly and D release peak shifts to lower temperature. Clearly, despite the high density of defects expected in co-deposited W layers, the initial deuterium retention before exposure to the deuterium plasma is low even for the samples with a W&D layer. But due to the high densities of defects, during the deuterium plasma exposure the deuterium retention increases faster for co-deposited layer than for the bulk W sample.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

NASA Astrophysics Data System (ADS)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Estimation of the characteristic parameters of the multilayered film model using the patterson differential function

DOE Office of Scientific and Technical Information (OSTI.GOV)

Astaf'ev, S. B., E-mail: webmaster@ns.crys.ras.ru; Shchedrin, B. M.; Yanusova, L. G.

The possibility of estimating the layered film structural parameters by constructing the autocorrelation function P{sub F}(z) (referred to as the Patterson differential function) for the derivative d{rho}/dz of electron density along the normal to the sample surface has been considered. An analytical expression P{sub F}(z) is presented for a multilayered film within the box model of the electron density profile. The possibilities of selecting structural information about layered films by analyzing the features of this function are demonstrated by model and real examples, in particular, by applying the method of shifted systems of peaks for the function P{sub F}(z).

Interfacial chemical and electronic structure of cobalt deposition on 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT)

NASA Astrophysics Data System (ADS)

Zhu, Menglong; Lyu, Lu; Niu, Dongmei; Zhang, Hong; Zhang, Yuhe; Liu, Peng; Gao, Yongli

2017-04-01

Interfacial chemical and electronic structure of Co deposition on 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT) was investigated by ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). Chemical reaction of cobalt with C8-BTBT at the interface is confirmed by a new component of S 2s peak which is electron-rich compared to the original one of C8-BTBT molecules. Intensity evolution of the core level in XPS indicates that the adsorption of Co atoms is mainly at the surface without deeper diffusion into C8-BTBT layer. Initial deposition of Co atoms downward shifts the core levels of C8-BTBT by electron transfer from isolated Co atoms or clusters to the C8-BTBT. Further deposition of Co upward shifts the core levels of C8-BTBT because of the neutralization of the thicker metal Co film. Our investigation suggests an inert buffer layer inserted to protect organic layer from reaction or decomposition and to lower the carrier barriers for both the electron and hole to improve the performance of Co/C8-BTBT-based OFETs.

Electronic and Optical Properties of Twisted Bilayer Graphene

NASA Astrophysics Data System (ADS)

Huang, Shengqiang

The ability to isolate single atomic layers of van der Waals materials has led to renewed interest in the electronic and optical properties of these materials as they can be fundamentally different at the monolayer limit. Moreover, these 2D crystals can be assembled together layer by layer, with controllable sequence and orientation, to form artificial materials that exhibit new features that are not found in monolayers nor bulk. Twisted bilayer graphene is one such prototype system formed by two monolayer graphene layers placed on top of each other with a twist angle between their lattices, whose electronic band structure depends on the twist angle. This thesis presents the efforts to explore the electronic and optical properties of twisted bilayer graphene by Raman spectroscopy and scanning tunneling microscopy measurements. We first synthesize twisted bilayer graphene with various twist angles via chemical vapor deposition. Using a combination of scanning tunneling microscopy and Raman spectroscopy, the twist angles are determined. The strength of the Raman G peak is sensitive to the electronic band structure of twisted bilayer graphene and therefore we use this peak to monitor changes upon doping. Our results demonstrate the ability to modify the electronic and optical properties of twisted bilayer graphene with doping. We also fabricate twisted bilayer graphene by controllable stacking of two graphene monolayers with a dry transfer technique. For twist angles smaller than one degree, many body interactions play an important role. It requires eight electrons per moire unit cell to fill up each band instead of four electrons in the case of a larger twist angle. For twist angles smaller than 0.4 degree, a network of domain walls separating AB and BA stacking regions forms, which are predicted to host topologically protected helical states. Using scanning tunneling microscopy and spectroscopy, these states are confirmed to appear on the domain walls when inversion symmetry is broken with an external electric field. We observe a double-line profile of these states on the domain walls, only occurring when the AB and BA regions are gaped. These states give rise to channels that could transport charge in a dissipationless manner making twisted bilayer graphene a promising platform to realize controllable topological networks for future applications.

MCP performance improvement using alumina thin film

NASA Astrophysics Data System (ADS)

Yang, Yuzhen; Yan, Baojun; Liu, Shulin; Zhao, Tianchi; Yu, Yang; Wen, Kaile; Li, Yumei; Qi, Ming

2017-10-01

The performance improvement using alumina thin film on a dual microchannel plate (MCP) detector for single electron counting was investigated. The alumina thin film was coated on all surfaces of the MCPs by atomic layer deposition method. It was found that the gain, the single electron resolution and the peak-to-valley ratio of the dual MCP detector were significantly enhanced by coating the alumina thin film. The optimum operating conditions of the new dual MCP detector have been studied.

Measurement of the Positron Annihilation Induced Auger Electron Spectrum from Ag(100)

NASA Astrophysics Data System (ADS)

Joglekar, P.; Shastry, K.; Fazleev, N. G.; Weiss, A. H.

2013-06-01

Research has demonstrated that Positron Annihilation Induced Auger Spectroscopy (PAES) can be used to probe the top-most atomic layer of surfaces and to obtain Auger spectra that are completely free of beam-impact induced secondary background. The high degree of surface selectivity in PAES is a result of the fact that positrons implanted at low energies are trapped with high efficiency at an image-correlation potential well at the surface resulting in almost all of the positrons annihilating with atoms in the top-most layer. Secondary electrons associated with the impact of the incident positrons can be eliminated by a suitable choice of an incident beam energy. In this paper we present the results of measurements of the energy spectrum of electrons emitted as a result of positron annihilation induced Auger electron emission from a clean Ag(100) surface using a series of incident beam energies ranging from 20 eV down to 2 eV. A peak in the spectrum was observed at ~40 eV corresponding to the N2,3VV Auger transition in agreement with previous PAES studies. This peak was accompanied by an even larger low energy tail which persisted even at the lowest beam energies. Our results for Ag(100) are consistent with previous studies of Cu and Au and indicate that a significant fraction of electrons leaving the sample are emitted in the low energy tail and suggest a strong mechanism for energy sharing in the Auger process.

Auger electron diffraction study of the growth of Fe(001) films on ZnSe(001)

NASA Astrophysics Data System (ADS)

Jonker, B. T.; Prinz, G. A.

1991-03-01

The growth of Fe films on ZnSe(001) epilayers and bulk GaAs(001) substrates has been studied to determine the mode of film growth, the formation of the interface, and the structure of the overlayer at the 1-10 monolayer level. Auger electron diffraction (AED), x-ray photoelectron spectroscopy (XPS), and reflection high-energy electron diffraction data are obtained for incremental deposition of the Fe(001) overlayer. The coverage dependence of the AED forward scattering peaks reveals a predominantly layer-by-layer mode of film growth at 175 °C on ZnSe, while a more three-dimensional growth mode occurs on the oxide-desorbed GaAs(001) substrate. XPS studies of the semiconductor 3d levels indicate that the Fe/ZnSe interface is less reactive than the Fe/GaAs interface.

Evidence for a positron bound state on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Shastry, K.; Weiss, A. H.; Barbiellini, B.; Assaf, B. A.; Lim, Z. H.; Joglekar, P. V.; Heiman, D.

2015-06-01

We describe experiments aimed at probing the sticking of positrons to the surfaces of topological insulators using the Positron Annihilation induced Auger Electron Spectrometer (PAES). A magnetically guided beam was used to deposit positrons at the surface of Bi2Te2Se sample at energy of ∼2eV. Peaks observed in the energy spectra and intensities of electrons emitted as a result of positron annihilation showed peaks at energies corresponding to Auger peaks in Bi, Teand Se providing clear evidence of Auger emission associated with the annihilation of positrons in a surface bound state. Theoretical estimates of the binding energy of this state are compared with estimates obtained by measuring the incident beam energy threshold for secondary electron emission and the temperature dependence positronium(Ps) emission. The experiments provide strong evidence for the existence of a positron bound state at the surface of Bi2Te2Se and indicate the practicality of using positron annihilation to selectively probe the critically important top most layer of topological insulator system.

Re-examination of the metallic ion layers of comet Siding Spring origin measured by IUVS/MAVEN and MARSIS/MEX

NASA Astrophysics Data System (ADS)

Narukull, V. R.; Schneider, N. M.; Yaswanth, C.; MohanaManasa, P.; Crismani, M. M. J.; Deighan, J.; Jain, S.

2017-12-01

The close encounter of comet Siding Spring (C/2013 A1, CSS) with Mars on 19 October 2014 had several aftermath effects on the Martian upper atmosphere. Instruments on several spacecraft, such as the IUVS and NGIMS on MAVEN, MARSIS on MEX, and the SHARAD on MRO reported the atmospheric effects of the CSS event. In this study, we re-examined the IUVS and MARSIS observations to get further insight into the CSS effects on the Martian upper atmosphere. The IUVS repeated its observations over the same location with an interval of 22.5 hours. By using these repeated observations, we computed the rate of vertical transport of metallic ions at a given location. This analysis is repeated over several locations. We found that the lifetime of the metallic ion layer increases with increase in altitude and the high-density layers decay faster than the low-density ones, in agreement with model simulations. These vertical transport rates are then used to examine time of the peak in metallic ion layer measured by NGIMS at 185 km. Previous studies have shown that there is an ambiguity in the altitude of the peak of metallic ion layer and that of the electron density layer due to CSS with the former being 60 km higher than the later. By re-analyzing the observations of IUVS and MARSIS, we addressed the ambiguity in altitude. The ambiguity in the altitude is mainly because of the differences in the orbital passes of the two spacecraft, the global inhomogeneity of the initial dust deposition, and the dispersion effects of the electron density profiles in the MARSIS observations.

Radio Sounding of the Martian and Venusian Ionospheres

NASA Astrophysics Data System (ADS)

Paetzold, M.; Haeusler, B.; Bird, M. K.; Peter, K.; Tellmann, S.; Tyler, G. L.; Withers, P.

2011-12-01

The Mars Express Radio Science Experiment MaRS and the radio science experiment Vera on Venus Express sound the ionospheres of Mars and Venus, respectively, at two frequencies in the microwave band and cover altitudes from the base of the ionosphere at 80 km (100 km at Venus) to the ionopause at altitudes between 300 km and 600 km. In general, both ionospheres consists of a lower layer M1 (V1 at Venus) at about 110 km (115 km), and the main layer M2 (V2) at about 135 km (145 km) altitude, both formed mainly by solar radiation at X-ray and EUV, respectively. The specific derivation and interpretation of the vertical electron density profiles at two radio frequencies from radio sounding is demonstrated in detail. Cases of quiet and disturbed ionospheric electron density profiles and cases of potential misinterpretations are presented. The behavior of the peak densities and peak altitudes of both ionospheres as a function of solar zenith angle and phase of the solar cycle as seen with Mars Express and Venus Express will be compared with past observations, models and conclusions.

A modified Bitter-type electromagnet and control system for cold atom experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luan, Tian; Zhou, Tianwei; Chen, Xuzong, E-mail: xuzongchen@pku.edu.cn

2014-02-15

We present a modified Bitter-type electromagnet which features high magnetic field, fine electronic properties and efficient heat removal. The electromagnet is constructed from a stack of copper layers separated by mica layers that have the same shape. A distinctive design of cooling channels on the insulating layers and the parallel ducts between the layers ensures low resistance for cooling water to flow. A continuous current control system is also made to regulate the current through the electromagnet. In our experiment, versatile electromagnets are applied to generate magnetic field and gradient field. From our measurements, a peak magnetic field of 1000more » G and a peak gradient field of 80 G/cm are generated in the center of the apparatuses which are 7 cm and 5 cm away from the edge of each electromagnet with a current of 230 A and 120 A, respectively. With the effective feedback design in the current control system and cooling water flow of 3.8 l/min, the stability of the current through the electromagnets can reach 10{sup −5}.« less

Effects of interlayer screening and temperature on dielectric functions of graphene by first-principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J. Y.; Liu, L. H., E-mail: lhliu@hit.edu.cn; Department of Physics, Harbin Institute of Technology, Harbin 150001

2016-07-21

The dielectric functions of few-layer graphene and the related temperature dependence are investigated from the atomic scale using first-principles calculations. Compared with ellipsometry experiments in the spectral range of 190–2500 nm, the normalized optical constants of mono-layer graphene demonstrate good agreement and further validate first-principles calculations. To interpret dielectric function of mono-layer graphene, the electronic band structure and density of states are analyzed. By comparing dielectric functions of mono-, bi-, and tri-layer graphene, it shows that interlayer screening strengthens intraband transition and greatly enhances the absorption peak located around 1 eV. The strengthened optical absorption is intrinsically caused by the increasing electronmore » states near the Fermi level. To investigate temperature effect, the first-principles calculations and lattice dynamics are combined. The lattice vibration enhances parallel optical absorption peak around 1 eV and induces redshift. Moreover, it is observed that the van der Waals force plays a key role in keeping the interlayer distance stable during dynamics simulations.« less

Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Qi; Zhang, Hao; Zhang, Xiao-Wen; Xu, Tao; Wei, Bin

2015-02-01

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. Project supported by the National Natural Science Foundation of China (Grant Nos. 61136003 and 61275041) and the Guangxi Provincial Natural Science Foundation, China (Grant No. 2012GXNSFBA053168).

Characterization of laser induced damage of HR coatings with picosecond pulses

NASA Astrophysics Data System (ADS)

Li, Cheng; Zhao, Yuan'an; Cui, Yun; Wang, Yueliang; Peng, Xiaocong; Shan, Chong; Zhu, Meiping; Wang, Jianguo; Shao, Jianda

2017-11-01

The effect of protective layer on the picosecond laser-induced damage behaviors of HfO2/SiO2 high-reflective (HR) coatings are explored. Two kinds of 1064nm HR coatings with and without protective layer are deposited by electron beam evaporation. Laser-induced damage tests are conducted with 1064nm, 30ps S-polarized and P-polarized pulses with different angle of incidence (AOI) to make the electric fields intensity in the HR coatings discrepantly. Damage morphology and cross section of damage sites were characterized by scanning electron microscope (SEM) and focused ion beam (FIB), respectively. It is found that SiO2 protective layer have a certain degree of improvement on laser induced damage threshold (LIDT) for every AOIs. The onset damage initiated very near to the Max peak of e-field, after which forms ripple-like pits. The damage morphology presents as layer delamination at high fluence. The Laser damage resistance is correspond with the maximum E-intensity in the coating stacks.

Excitation of hybridized Dirac plasmon polaritons and transition radiation in multi-layer graphene traversed by a fast charged particle

NASA Astrophysics Data System (ADS)

Akbari, Kamran; Mišković, Zoran L.; Segui, Silvina; Gervasoni, Juana L.; Arista, Néstor R.

2018-06-01

We analyze the energy loss channels for a fast charged particle traversing a multi-layer graphene (MLG) structure with N layers under normal incidence. Focusing on a terahertz (THz) range of frequencies, and assuming equally doped graphene layers with a large enough separation d between them to neglect interlayer electron hopping, we use the Drude model for two-dimensional conductivity of each layer to describe hybridization of graphene’s Dirac plasmon polaritons (DPPs). Performing a layer decomposition of ohmic energy losses, which include excitation of hybridized DPPs (HDPPs), we have found for N = 3 that the middle HDPP eigenfrequency is not excited in the middle layer due to symmetry constraint, whereas the excitation of the lowest HDPP eigenfrequency produces a Fano resonance in the graphene layer that is first traversed by the charged particle. While the angular distribution of transition radiation emitted in the far field region also shows asymmetry with respect to the traversal order by the incident charged particle at supra-THz frequencies, the integrated radiative energy loss is surprisingly independent of both d and N for N ≤ 5, which is explained by a dominant role of the outer graphene layers in transition radiation. We have further found that the integrated ohmic energy loss in optically thin MLG scales as ∝1/N at sub-THz frequencies, which is explained by exposing the role of dissipative processes in graphene at low frequencies. Finally, prominent peaks are observed at supra-THz frequencies in the integrated ohmic energy loss for MLG structures that are not optically thin. The magnitude of those peaks is found to scale with N for N ≥ 2, while their shape and position replicate the peak in a double-layer graphene (N = 2), which is explained by arguing that plasmon hybridization in such MLG structures is dominated by electromagnetic interaction between the nearest-neighbor graphene layers.

Excitation of hybridized Dirac plasmon polaritons and transition radiation in multi-layer graphene traversed by a fast charged particle.

PubMed

Akbari, Kamran; Mišković, Zoran L; Segui, Silvina; Gervasoni, Juana L; Arista, Néstor R

2018-06-01

We analyze the energy loss channels for a fast charged particle traversing a multi-layer graphene (MLG) structure with N layers under normal incidence. Focusing on a terahertz (THz) range of frequencies, and assuming equally doped graphene layers with a large enough separation d between them to neglect interlayer electron hopping, we use the Drude model for two-dimensional conductivity of each layer to describe hybridization of graphene's Dirac plasmon polaritons (DPPs). Performing a layer decomposition of ohmic energy losses, which include excitation of hybridized DPPs (HDPPs), we have found for N = 3 that the middle HDPP eigenfrequency is not excited in the middle layer due to symmetry constraint, whereas the excitation of the lowest HDPP eigenfrequency produces a Fano resonance in the graphene layer that is first traversed by the charged particle. While the angular distribution of transition radiation emitted in the far field region also shows asymmetry with respect to the traversal order by the incident charged particle at supra-THz frequencies, the integrated radiative energy loss is surprisingly independent of both d and N for N ≤ 5, which is explained by a dominant role of the outer graphene layers in transition radiation. We have further found that the integrated ohmic energy loss in optically thin MLG scales as ∝1/N at sub-THz frequencies, which is explained by exposing the role of dissipative processes in graphene at low frequencies. Finally, prominent peaks are observed at supra-THz frequencies in the integrated ohmic energy loss for MLG structures that are not optically thin. The magnitude of those peaks is found to scale with N for N ≥ 2, while their shape and position replicate the peak in a double-layer graphene (N = 2), which is explained by arguing that plasmon hybridization in such MLG structures is dominated by electromagnetic interaction between the nearest-neighbor graphene layers.

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560 013; Bhat, Thirumaleshwara N.

Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics ofmore » a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.« less

Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

PubMed Central

Zhao, Y.; Wan, Z.; Xu, X.; Patil, S. R.; Hetmaniuk, U.; Anantram, M. P.

2015-01-01

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting strong negative differential resistance (NDR) effect with multiple resonant peaks, which stay pronounced for various device dimensions. We find two distinct mechanisms that are responsible for NDR, depending on the gate and applied biases, in the same device. The origin of first mechanism is a Fabry-Pérot like interference and that of the second mechanism is an in-plane wave vector matching when the Dirac points of the electrodes align. The hBN layers can induce an asymmetry in the current-voltage characteristics which can be further modulated by an applied bias. We find that the electron-phonon scattering suppresses the first mechanism whereas the second mechanism remains relatively unaffected. We also show that the NDR features are tunable by varying device dimensions. The NDR feature with multiple resonant peaks, combined with ultrafast tunneling speed provides prospect for the graphene-hBN-graphene heterostructure in the high-performance electronics. PMID:25991076

Low-Temperature Growth and Doping of Mercury-Based II-Vi Multiple Quantum Well Structures by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lansari, Yamina

The growth of Hg-based single layers and multiple quantum well structures by conventional molecular beam epitaxy (MBE) and photoassisted MBE was studied. The use of photoassisted MBE, an epitaxial growth technique developed at NCSU, has resulted in a substantial reduction of the film growth temperature. Indeed, substrate temperatures 50 to 100^circC lower than those customarily used by others for conventional MBE growth of Hg-based layers were successfully employed. Photoassisted MBE allowed the preparation of excellent structural quality HgTe layers (FWHM for the (400) diffraction peak ~ 40 arcsec), HgCdTe layers (FWHM for the (400) diffraction peak ~ 14 arcsec), and HgTeCdTe superlattices (FWHM for the (400) diffraction peak ~ 28 arcsec). In addition, n-type and p-type modulation-doping of Hg-based multilayers was accomplished by photoassisted MBE. This technique has been shown to have a significant effect on the growth process kinetics as well as on the desorption rates of the film species, thereby affecting dopant incorporation mechanisms and allowing for the successful substitutional doping of the multilayer structures. Finally, surface morphology studies were completed using scanning electron microscopy (SEM) and Nomarsky optical microscopy to study the effects of substrate surface preparation, growth initiation, and growth parameters on the density of pyramidal hillocks, a common growth defect plaguing the Hg-based layers grown in the (100) direction. Conditions which minimize the hillock density for (100) film growth have been determined.

Chemical and morphological characterization of III-V strained layered heterostructures

NASA Astrophysics Data System (ADS)

Gray, Allen Lindsay

This dissertation describes investigations into the chemical and morphological characterization of III-V strained layered heterostructures by high-resolution x-ray diffraction. The purpose of this work is two-fold. The first was to use high-resolution x-ray diffraction coupled with transmission electron microscopy to characterize structurally a quaternary AlGaAsSb/InGaAsSb multiple quantum well heterostructure laser device. A method for uniquely determining the chemical composition of the strain quaternary quantum well, information previously thought to be unattainable using high resolution x-ray diffraction is thoroughly described. The misconception that high-resolution x-ray diffraction can separately find the well and barrier thickness of a multi-quantum well from the pendellosung fringe spacing is corrected, and thus the need for transmission electron microscopy is motivated. Computer simulations show that the key in finding the well composition is the intensity of the -3rd order satellite peaks in the diffraction pattern. The second part of this work addresses the evolution of strain relief in metastable multi-period InGaAs/GaAs multi-layered structures by high-resolution x-ray reciprocal space maps. Results are accompanied by transmission electron and differential contrast microscopy. The evolution of strain relief is tracked from a coherent "pseudomorphic" growth to a dislocated state as a function of period number by examining the x-ray diffuse scatter emanating from the average composition (zeroth-order) of the multi-layer. Relaxation is determined from the relative positions of the substrate with respect to the zeroth-order peak. For the low period number, the diffuse scatter from the multi-layer structure region arises from periodic, coherent crystallites. For the intermediate period number, the displacement fields around the multi-layer structure region transition to random coherent crystallites. At the higher period number, displacement fields of overlapping dislocations from relaxation of the random crystallites cause the initial stages of relaxation of the multi-layer structure. At the highest period number studied, relaxation of the multi-layer structure becomes bi-modal characterized by overlapping dislocations caused by mosaic block relaxation and periodically spaced misfit dislocations formed by 60°-type dislocations. The relaxation of the multi-layer structure has an exponential dependence on the diffuse scatter length-scale, which is shown to be a sensitive measure of the onset of relaxation.

Ruthenium nano-oxide layer in CoFe-Ru-CoFe trilayer system: An x-ray reflectivity study

NASA Astrophysics Data System (ADS)

Asgharizadeh, S.; Sutton, M.; Altounian, Z.; Mao, M.; Lee, C. L.

2008-05-01

A grazing incidence x-ray reflectivity technique is used to determine the electron density profile as a function of depth in CoFe-Ru-CoFe and CoFe-Ru nano-oxide layer (NOL)-CoFe trilayers. Four trilayers with ruthenium thicknesses of 8, 8.5, and 9Å and one with Ru 8.5Å NOL, prepared by a dc planetary sputtering system, were investigated. For all samples, the electron density profile (EDP) shows a central peak that is related to the Ru layer. Natural oxidation in all of the samples introduces a graded EDP of the top CoFe layers, which decreases gradually to zero. The large surface resistivity of Ru 8.5Å NOL as compared to Ru 8.5Å is related to the remarkable difference between their EDPs. EDP changes have also been investigated in Ru NOL trilayers after annealing at 280°C. The Ru phase in the EDP was observed to confirm the thermal stability of the spacer layer after annealing.

Tailoring the charge carrier in few layers MoS2 field-effect transistors by Au metal adsorbate

NASA Astrophysics Data System (ADS)

Singh, Arun Kumar; Pandey, Rajiv K.; Prakash, Rajiv; Eom, Jonghwa

2018-04-01

It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS2) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS2. After deposition of Au thin layer, the threshold voltages of FL MoS2 field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS2 nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS2 nanosheets. The surface morphology of Au metal on FL MoS2 is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO2.

Anisotropic metamaterial waveguide driven by a cold and relativistic electron beam

NASA Astrophysics Data System (ADS)

Torabi, Mahmoud; Shokri, Babak

2018-03-01

We study the interaction of a cold and relativistic electron beam with a cylindrical waveguide loaded by an anisotropic and dispersive metamaterial layer. The general dispersion relation for the transverse magnetic (TM) mode, through the linear fluid model and Maxwell equations decomposition method, is derived. The effects of some metamaterial parameters on dispersion relation are presented. A qualitative discussion shows the possibility of monomodal propagation band widening and obtaining more control on dispersion relation behavior. Especially for epsilon negative near zero metamaterials, these effects are considerable. Finally, the anisotropy and metamaterial layer thickness impacts on wave growth rate for different metamaterials are considered. The results demonstrate that we can control both wave growth rate and voltage of saturation peak by metamaterial parameters.

Nature of weak magnetism in SrTiO3/LaAlO3 multilayers.

PubMed

Salman, Z; Ofer, O; Radovic, M; Hao, H; Ben Shalom, M; Chow, K H; Dagan, Y; Hossain, M D; Levy, C D P; Macfarlane, W A; Morris, G M; Patthey, L; Pearson, M R; Saadaoui, H; Schmitt, T; Wang, D; Kiefl, R F

2012-12-21

We report the observation of weak magnetism in superlattices of LaAlO(3)/SrTiO(3) using β-detected nuclear magnetic resonance. The spin lattice relaxation rate of ^{8}Li in superlattices with a spacer layers of 8 and 6 unit cells of LaAlO(3) exhibits a strong peak near ~35 K, whereas no such peak is observed in a superlattice with spacer layer thickness of 3 unit cells. We attribute the observed temperature dependence to slowing down of weakly coupled electronic moments at the LaAlO(3)/SrTiO(3) interface. These results show that the magnetism at the interface depends strongly on the thickness of the spacer layer, and that a minimal thickness of ~4-6 unit cells is required for the appearance of magnetism. A simple model is used to determine that the observed relaxation is due to small fluctuating moments (~0.002μ(B)) in the two samples with a larger LaAlO(3) spacer thickness.

Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors

DOE PAGES

Giacomini, Gabriele; Huber, Alan; Redus, Robert; ...

2017-11-13

We report that when an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the silicon/oxide interface, and floating GRs. The crosstalk signals generated by these events create spurious peaks, replicas of the main peaks at either lower amplitude or of opposite polarity. Lastly, we explain this phenomenon as crosstalk caused by charge collected on these floating electrodes, which can be analyzed by means of an extensionmore » of Ramo theorem.« less

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

NASA Technical Reports Server (NTRS)

Garlick, G. F. J.; Kachare, A. H.

1981-01-01

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Electron Raman scattering in a strained ZnO/MgZnO double quantum well

NASA Astrophysics Data System (ADS)

Mojab-abpardeh, M.; Karimi, M. J.

2018-02-01

In this work, the electron Raman scattering in a strained ZnO / MgZnO double quantum wells is studied. The energy eigenvalues and the wave functions are obtained using the transfer matrix method. The effects of Mg composition, well width and barrier width on the internal electric field in well and barrier layers are investigated. Then, the influences of these parameters on the differential cross-section of electron Raman scattering are studied. Results indicate that the position, magnitude and the number of the peaks depend on the Mg composition, well width and barrier width.

Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer.

PubMed

Pierucci, Debora; Brumme, Thomas; Girard, Jean-Christophe; Calandra, Matteo; Silly, Mathieu G; Sirotti, Fausto; Barbier, Antoine; Mauri, Francesco; Ouerghi, Abdelkarim

2016-09-15

The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Different spectra are observed and are attributed to the existence of two stable polytypes of trilayer: Bernal (ABA) and rhomboedreal (ABC) staking. Their electronic properties strongly depend on the charge transfer from the substrate. We show that the LDOS of ABC stacking shows an additional peak located above the Dirac point in comparison with the LDOS of ABA stacking. The observed LDOS features, reflecting the underlying symmetry of the two polytypes, were reproduced by explicit calculations within density functional theory (DFT) including the charge transfer from the substrate. These findings demonstrate the pronounced effect of stacking order and charge transfer on the electronic structure of trilayer or few layer graphene. Our approach represents a significant step toward understand the electronic properties of graphene layer under electrical field.

Excitonic Properties of Chemically Synthesized 2D Organic-Inorganic Hybrid Perovskite Nanosheets.

PubMed

Zhang, Qi; Chu, Leiqiang; Zhou, Feng; Ji, Wei; Eda, Goki

2018-05-01

2D organic-inorganic hybrid perovskites (OIHPs) represent a unique class of materials with a natural quantum-well structure and quasi-2D electronic properties. Here, a versatile direct solution-based synthesis of mono- and few-layer OIHP nanosheets and a systematic study of their electronic structure as a function of the number of monolayers by photoluminescence and absorption spectroscopy are reported. The monolayers of various OIHPs are found to exhibit high electronic quality as evidenced by high quantum yield and negligible Stokes shift. It is shown that the ground exciton peak blueshifts by ≈40 meV when the layer thickness reduces from bulk to monolayer. It is also shown that the exciton binding energy remains effectively unchanged for (C 6 H 5 (CH 2 ) 2 NH 3 ) 2 PbI 4 with the number of layers. Similar trends are observed for (C 4 H 9 NH 3 ) 2 PbI 4 in contrast to the previous report. Further, the photoluminescence lifetime is found to decrease with the number of monolayers, indicating the dominant role of surface trap states in nonradiative recombination of the electron-hole pairs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Phonon shift in chemically exfoliated WS2 nanosheet

NASA Astrophysics Data System (ADS)

Sarkar, Abdus Salam; Pal, Suman Kalyan

2018-04-01

We have synthesized few layer WS2 nanosheets in a low boiling point solvent. Few layer of WS2 sheets are characterized by various techniques such as UV-visible and Raman spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and scanning electron microscopy (SEM). UV-Vis absorption spectra confirm the well dispersed in isopropyl alcohol. SEM and TEM images indicate the sheet like morphology of WS2. Atomic force microscopy image and room temperature Raman spectroscopy confirm the exfoliation of few layer (4-5 layer) of WS2. Further, Raman spectroscopy was used as a meteorology tool to determine the temperature co-efficient. We have systematically investigated the temperature dependent Raman spectroscopic behavior of few layer WS2. Our results depict the softening of the Raman modes E12g in plane vibration and A1g out of plane vibration with increasing the temperature from 77 K to 300 K. Softening of the Raman modes could be explained in terms of the double resonance which is active in the layered materials. The observed temperature coefficients for two Raman peaks E12g and A1g, are - 0.022 cm-1 and -0.009 cm-1, respectively.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Online, automatic, ionospheric maps: IRI-PLAS-MAP

NASA Astrophysics Data System (ADS)

Arikan, F.; Sezen, U.; Gulyaeva, T. L.; Cilibas, O.

2015-04-01

Global and regional behavior of the ionosphere is an important component of space weather. The peak height and critical frequency of ionospheric layer for the maximum ionization, namely, hmF2 and foF2, and the total number of electrons on a ray path, Total Electron Content (TEC), are the most investigated and monitored values of ionosphere in capturing and observing ionospheric variability. Typically ionospheric models such as International Reference Ionosphere (IRI) can provide electron density profile, critical parameters of ionospheric layers and Ionospheric electron content for a given location, date and time. Yet, IRI model is limited by only foF2 STORM option in reflecting the dynamics of ionospheric/plasmaspheric/geomagnetic storms. Global Ionospheric Maps (GIM) are provided by IGS analysis centers for global TEC distribution estimated from ground-based GPS stations that can capture the actual dynamics of ionosphere and plasmasphere, but this service is not available for other ionospheric observables. In this study, a unique and original space weather service is introduced as IRI-PLAS-MAP from http://www.ionolab.org

Condensed-Phase Processes during Solid Propellant Combustion. Part 2: Chemical and Microscopic Examination of Conductively Quenched Samples of RDX, XM39, JA2, M30, and HMX-Binder Compositions

DTIC Science & Technology

1992-05-01

combustion of most of the propellants, with the possible exception of JA2; scanning electron microcope examination shows the existence of a liquid layer but... compounds are similar (Fifer et Sl. 1985; Hoffsommer, Glover, and Elban 1985), the relative Intensities In Table 2 should provide rough, order-of...top of the liquid layer. In addition, the HPLC chromatograms contained a number of very weak, unknown peaks apparently corresponding to compounds

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.

PubMed

Xia, Jing; Huang, Xing; Liu, Ling-Zhi; Wang, Meng; Wang, Lei; Huang, Ben; Zhu, Dan-Dan; Li, Jun-Jie; Gu, Chang-Zhi; Meng, Xiang-Min

2014-08-07

Synthesis of large-area, atomically thin transition metal dichalcogenides (TMDs) on diverse substrates is of central importance for the large-scale fabrication of flexible devices and heterojunction-based devices. In this work, we successfully synthesized a large area of highly-crystalline MoSe2 atomic layers on SiO2/Si, mica and Si substrates using a simple chemical vapour deposition (CVD) method at atmospheric pressure. Atomic force microscopy (AFM) and Raman spectroscopy reveal that the as-grown ultrathin MoSe2 layers change from a single layer to a few layers. Photoluminescence (PL) spectroscopy demonstrates that while the multi-layer MoSe2 shows weak emission peaks, the monolayer has a much stronger emission peak at ∼ 1.56 eV, indicating the transition from an indirect to a direct bandgap. Transmission electron microscopy (TEM) analysis confirms the single-crystallinity of MoSe2 layers with a hexagonal structure. In addition, the photoresponse performance of photodetectors based on MoSe2 monolayer was studied for the first time. The devices exhibit a rapid response of ∼ 60 ms and a good photoresponsivity of ∼ 13 mA/W (using a 532 nm laser at an intensity of 1 mW mm(-2) and a bias of 10 V), suggesting that MoSe2 monolayer is a promising material for photodetection applications.

The ionosphere of Uranus - A myriad of possibilities

NASA Astrophysics Data System (ADS)

Chandler, M. O.; Waite, J. H.

1986-01-01

A one-dimensional model has been used to study the effects of exospheric temperature, methane and water influx, ionospheric outflow, and electron precipitation on the composition and structure of the ionosphere of Uranus. Peak ion concentrations range from 1000 to 1 million per cu cm with a wide variation in peak altitude, which depends strongly on the exospheric temperature. In all the cases considered, H(+) is the major ion in the topside ionosphere. At altitudes near or below the peak, H3(+) and CH5(+) can dominate, depending on the magnitude of CH4 and H2O influx. Atomic hydrogen column depths above the methane absorbing layer exceed 10 to the 17th per sq cm and can produce large (400 R) emissions of resonantly scattered Lyman-alpha. In the sunlit polar cap, electron precipitation with energy fluxes of 0.6 to 1.0 erg/sq cm s results in direct production of Lyman-alpha emissions that exceed 1 kR.

Influence of charged defects on the interfacial bonding strength of tantalum- and silver-doped nanograined TiO2.

PubMed

Azadmanjiri, Jalal; Wang, James; Berndt, Christopher C; Kapoor, Ajay; Zhu, De Ming; Ang, Andrew S M; Srivastava, Vijay K

2017-05-17

A nano-grained layer including line defects was formed on the surface of a Ti alloy (Ti alloy , Ti-6Al-4V ELI). Then, the micro- and nano-grained Ti alloy with the formation of TiO 2 on its top surface was coated with a bioactive Ta layer with or without incorporating an antibacterial agent of Ag that was manufactured by magnetron sputtering. Subsequently, the influence of the charged defects (the defects that can be electrically charged on the surface) on the interfacial bonding strength and hardness of the surface system was studied via an electronic model. Thereby, material systems of (i) Ta coated micro-grained titanium alloy (Ta/MGTi alloy ), (ii) Ta coated nano-grained titanium alloy (Ta/NGTi alloy ), (iii) TaAg coated micro-grained titanium alloy (TaAg/MGTi alloy ) and (iv) TaAg coated nano-grained titanium alloy (TaAg/NGTi alloy ) were formed. X-ray photoelectron spectroscopy was used to probe the electronic structure of the micro- and nano-grained Ti alloy , and so-formed heterostructures. The thin film/substrate interfaces exhibited different satellite peak intensities. The satellite peak intensity may be related to the interfacial bonding strength and hardness of the surface system. The interfacial layer of TaAg/NGTi alloy exhibited the highest satellite intensity and maximum hardness value. The increased bonding strength and hardness in the TaAg/NGTi alloy arises due to the negative core charge of the dislocations and neighbor space charge accumulation, as well as electron accumulation in the created semiconductor phases of larger band gap at the interfacial layer. These two factors generate interfacial polarization and enhance the satellite intensity. Consequently, the interfacial bonding strength and hardness of the surface system are improved by the formation of mixed covalent-ionic bonding structures around the dislocation core area and the interfacial layer. The bonding strength relationship by in situ XPS on the metal/TiO 2 interfacial layer may be examined with other noble metals and applied in diverse fields.

Positron Annihilation Induced Auger Electron Spectroscopic Studies Of Reconstructed Semiconductor Surfaces

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Reed, J. A.; Starnes, S. G.; Weiss, A. H.

2011-06-01

The positron annihilation induced Auger spectrum from GaAs(100) displays six As and three Ga Auger peaks below 110 eV corresponding to M4,5VV, M2M4V, M2,3M4,5M4,5 Auger transitions for As and M2,3M4,5M4,5 Auger transitions for Ga. The integrated Auger peak intensities have been used to obtain experimental annihilation probabilities of surface trapped positrons with As 3p and 3d and Ga 3p core level electrons. PAES data is analyzed by performing calculations of positron surface and bulk states and annihilation characteristics of surface trapped positrons with relevant Ga and As core level electrons for both Ga- and As-rich (100) surfaces of GaAs, ideally terminated, non-reconstructed and with (2×8), (2×4), and (4×4) reconstructions. The orientation-dependent variations of the atomic and electron densities associated with reconstructions are found to affect localization of the positron wave function at the surface. Computed positron binding energy, work function, and annihilation characteristics demonstrate their sensitivity both to chemical composition and atomic structure of the topmost layers of the surface. Theoretical annihilation probabilities of surface trapped positrons with As 3d, 3p, and Ga 3p core level electrons are compared with the ones estimated from the measured Auger peak intensities.

Properties of copper (fluoro-)phthalocyanine layers deposited on epitaxial graphene.

PubMed

Ren, Jun; Meng, Sheng; Wang, Yi-Lin; Ma, Xu-Cun; Xue, Qi-Kun; Kaxiras, Efthimios

2011-05-21

We investigate the atomic structure and electronic properties of monolayers of copper phthalocyanines (CuPc) deposited on epitaxial graphene substrate. We focus in particular on hexadecafluorophthalocyanine (F(16)CuPc), using both theoretical and experimental (scanning tunneling microscopy - STM) studies. For the individual CuPc and F(16)CuPc molecules, we calculated the electronic and optical properties using density functional theory (DFT) and time-dependent DFT and found a red-shift in the absorption peaks of F(16)CuPc relative to those of CuPc. In F(16)CuPc, the electronic wavefunctions are more polarized toward the electronegative fluorine atoms and away from the Cu atom at the center of the molecule. When adsorbed on graphene, the molecules lie flat and form closely packed patterns: F(16)CuPc forms a hexagonal pattern with two well-ordered alternating α and β stripes while CuPc arranges into a square lattice. The competition between molecule-substrate and intermolecular van der Waals interactions plays a crucial role in establishing the molecular patterns leading to tunable electron transfer from graphene to the molecules. This transfer is controlled by the layer thickness of, or the applied voltage on, epitaxial graphene resulting in selective F(16)CuPc adsorption, as observed in STM experiments. In addition, phthalocyanine adsorption modifies the electronic structure of the underlying graphene substrate introducing intensity smoothing in the range of 2-3 eV below the Dirac point (E(D)) and a small peak in the density of states at ∼0.4 eV above E(D). © 2011 American Institute of Physics.

Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

NASA Astrophysics Data System (ADS)

Nagarajan, Rao M.; Rask, Steven D.

1988-06-01

A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron beam to optical with t 0.2μm (2 sigma) and (2) Electron beam to electron beam with f 0.lμm (2 sigma). These results suggest that the electron beam/optical hybrid lithography techniques could be used for MIMIC volume production as alignment tolerances required by GaAS chips are met in both cases. These results are discussed in detail.

Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5

PubMed Central

Zhang, Yan; Wang, Chenlu; Yu, Li; Liu, Guodong; Liang, Aiji; Huang, Jianwei; Nie, Simin; Sun, Xuan; Zhang, Yuxiao; Shen, Bing; Liu, Jing; Weng, Hongming; Zhao, Lingxiao; Chen, Genfu; Jia, Xiaowen; Hu, Cheng; Ding, Ying; Zhao, Wenjuan; Gao, Qiang; Li, Cong; He, Shaolong; Zhao, Lin; Zhang, Fengfeng; Zhang, Shenjin; Yang, Feng; Wang, Zhimin; Peng, Qinjun; Dai, Xi; Fang, Zhong; Xu, Zuyan; Chen, Chuangtian; Zhou, X. J.

2017-01-01

The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced. PMID:28534501

Uric Acid Spherulites in the Reflector Layer of Firefly Light Organ

PubMed Central

Goh, King-Siang; Sheu, Hwo-Shuenn; Hua, Tzu-En; Kang, Mei-Hua; Li, Chia-Wei

2013-01-01

Background In firefly light organs, reflector layer is a specialized tissue which is believed to play a key role for increasing the bioluminescence intensity through reflection. However, the nature of this unique tissue remains elusive. In this report, we investigated the role, fine structure and nature of the reflector layer in the light organ of adult Luciola cerata. Principal Findings Our results indicated that the reflector layer is capable of reflecting bioluminescence, and contains abundant uric acid. Electron microscopy (EM) demonstrated that the cytosol of the reflector layer's cells is filled with densely packed spherical granules, which should be the uric acid granules. These granules are highly regular in size (∼700 nm in diameter), and exhibit a radial internal structure. X-ray diffraction (XRD) analyses revealed that an intense single peak pattern with a d-spacing value of 0.320 nm is specifically detected in the light organ, and is highly similar to the diffraction peak pattern and d-spacing value of needle-formed crystals of monosodium urate monohydrate. However, the molar ratio evaluation of uric acid to various cations (K+, Na+, Ca2+ and Mg2+) in the light organ deduced that only a few uric acid molecules were in the form of urate salts. Thus, non-salt uric acid should be the source of the diffraction signal detected in the light organ. Conclusions In the light organ, the intense single peak diffraction signal might come from a unique needle-like uric acid form, which is different from other known structures of non-salt uric acid form. The finding of a radial structure in the granules of reflector layer implies that the spherical uric acid granules might be formed by the radial arrangement of needle-formed packing matter. PMID:23441187

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giacomini, Gabriele; Huber, Alan; Redus, Robert

We report that when an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the silicon/oxide interface, and floating GRs. The crosstalk signals generated by these events create spurious peaks, replicas of the main peaks at either lower amplitude or of opposite polarity. Lastly, we explain this phenomenon as crosstalk caused by charge collected on these floating electrodes, which can be analyzed by means of an extensionmore » of Ramo theorem.« less

Thermal desorption of CO and H2 from degassed 304 and 347 stainless steel

NASA Technical Reports Server (NTRS)

Rezaie-Serej, S.; Outlaw, R. A.

1994-01-01

Thermal desorption spectroscopy (TDS), along with Auger electron spectroscopy, was used to study the desorption of H2 and CO from baked 304 and 347 stainless-steel samples exposed only to residual gases. Both 347 and 304 samples gave identical TDS spectra. The spectra for CO contained a sharp leading peak centered in the temperature range 410-440C and an exponentially increasing part for temperatures higher than 500C, with a small peak around 600C appearing as a shoulder. The leading peak followed a second-order desorption behavior with an activation energy of 28+/-2 kcal/mol, suggesting that the rate-limiting step for this peak is most likely a surface reaction that produces the CO molecules in the surface layer. The amount of desorbed CO corresponding to this peak was approximately 0.5X10(exp 14) molecules/cm(exp 2) . The exponentially rising part of the CO spectrum appeared to originate from a bulk diffusion process. The TDS spectrum for H2 consisted of a main peak centered also in the temperature range 410-440C, with two small peaks appearing as shoulders at approximately 500 and 650C. The main peak in this case also displayed a second-order behavior with an activation energy of 14+/-2 kcal/mol. The amount of desorbed H2, approximately 1.9X 10(exp 15) molecules/cm(exp 2) , appeared to be independent of the concentration of hydrogen in the bulk, indicating that the majority of the desorbed H2 originated from the surface layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gu, L. L.; Guo, X. G., E-mail: xgguo@mail.sim.ac.cn; Fu, Z. L.

Strong and sharp photocurrent peak at longitudinal optical (LO) phonon frequency (8.87 THz) is found in GaAs/(Al,Ga)As terahertz quantum-well photodetectors (QWPs). Two mesa-structure terahertz QWPs with and without one-dimensional metal grating are fabricated to investigate the behavior of such photoresponse peak. The experimental and simulation results indicate that the photocurrent peak originates from a two-step process. First, at the LO phonon frequency, a large number of non-equilibrium LO phonons are excited by the incident electromagnetic field, and the electromagnetic energy is localized and enhanced in the thin multi-quantum-well layer. Second, through the Frohlich interaction, the localized electrons are excited tomore » continuum states by absorbing the non-equilibrium LO phonons, which leads to the strong photoresponse peak. This finding is useful for exploring strong light-matter interaction and realizing high sensitive terahertz photodetectors.« less

Miscibility of amorphous ZrO2-Al2O3 binary alloy

NASA Astrophysics Data System (ADS)

Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

2002-04-01

Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

Opposite Latitudinal Dependence of the Premidnight and Postmidnight Oscillations in the Electron Density of Midlatitude F Layer

NASA Astrophysics Data System (ADS)

Chen, Gang; Wang, Jin; Zhang, Shaodong; Deng, Zhongxin; Zhong, Dingkun; Wu, Chen; Jin, Han; Li, Yaxian

2018-01-01

The dense observation points of the oblique-incidence ionosonde network in North China make it possible to discover the ionospheric regional variations with relatively high spatial resolution. The ionosonde network and the Beijing digisonde are used to investigate the ionospheric nighttime oscillations in January and February 2011. The electron density enhancements occurring before and after midnight present the obvious opposite latitudinal dependence in the time-latitude maps, which are composed by the differential critical frequency of F2 layer. The premidnight enhancements (PRMEs) appeared earlier in the north and then moved to south. The postmidnight enhancements (POMEs) did the opposite. The data analysis shows that the PRME was a part of the large-scale traveling ionospheric disturbance (LSTID), which may be produced by gravity waves. The southward propagation of the LSTIDs is considered to form the positive latitudinal dependence of the wave peaks and troughs. The postmidnight F layer oscillation was composed by a single enhancement and a single decline following it. The westward electric field-induced E × B drift, which pushed the F layer to lower altitudes with higher recombination loss, was most likely to compress the plasma and produce the POMEs. Along with the continuously dropping of the layer, the recombination loss exceeded the density increase due to the compression effect and then the electron density decline appeared.

Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi

2015-08-15

Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originatedmore » from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.« less

The role of radiative de-excitation in the neutralization process of highly charged ions interacting with a single layer of graphene

NASA Astrophysics Data System (ADS)

Schwestka, J.; Wilhelm, R. A.; Gruber, E.; Heller, R.; Kozubek, R.; Schleberger, M.; Facsko, S.; Aumayr, F.

2018-05-01

X-ray emission of slow (<1 a.u.) highly charged Argon and Xenon ions is measured for transmission through a freestanding single layer of graphene. To discriminate against X-ray emission originating from the graphene's support grid a coincidence technique is used. X-ray emission of 75 keV Ar17+ and Ar18+ ions with either one or two K-shell vacancies is recorded. Using a windowless Bruker XFlash detector allows us to measure additionally Ar KLL and KLM Auger electrons and determine the branching ratio of radiative vs. non-radiative decay of Ar K-shell holes. Furthermore, X-ray spectra for 100 keV Xe22+-Xe35+ ions are compared, showing a broad M-line peak for all cases, where M-shell vacancies are present. All these peaks are accompanied by emission lines at still higher energies indicating the presence of a hollow atom during X-ray decay. We report a linear shift of the main M-line peak to higher energies for increasing incident charge state, i.e. increasing number of M-shell holes.

Examining the ground layer of St. Anthony from Padua 19th century oil painting by Raman spectroscopy, scanning electron microscopy and X-ray diffraction

NASA Astrophysics Data System (ADS)

Vančo, Ľubomír; Kadlečíková, Magdaléna; Breza, Juraj; Čaplovič, Ľubomír; Gregor, Miloš

2013-01-01

In this paper we studied the material composition of the ground layer of a neoclassical painting. We used Raman spectroscopy (RS) as a prime method. Thereafter scanning electron microscopy combined with energy dispersive spectroscopy (SEM-EDS) and X-ray powder diffraction (XRD) were employed as complementary techniques. The painting inspected was of the side altar in King St. Stephen's Church in Galanta (Slovakia), signed and dated by Jos. Chr. Mayer 1870. Analysis was carried out on both covered and uncovered ground layers. Four principal compounds (barite, lead white, calcite, dolomite) and two minor compounds (sphalerite, quartz) were identified. This ground composition is consistent with the 19th century painting technique used in Central Europe consisting of white pigments and white fillers. Transformation of lead white occurred under laser irradiation. Subdominant Raman peaks of the components were measured. The observed results elucidate useful partnership of RS and SEM-EDS measurements supported by X-ray powder diffraction as well as possibilities and limitations of non-destructive analysis of covered lower layers by RS.

IDENTIFICATION OF A PROTEIN-CONTAINING ENAMEL MATRIX LAYER WHICH BRIDGES WITH THE DENTIN-ENAMEL JUNCTION OF ADULT HUMAN TEETH1

PubMed Central

Dusevich, Vladimir; Xu, Changqi; Wang, Yong; Walker, Mary P.; Gorski, Jeff P.

2012-01-01

Objective To investigate the ultrastructure and chemical composition of the dentin-enamel junction and adjacent enamel of minimally processed third molar tooth sections. Design Undecalcified human third molar erupted teeth were sectioned and etched with 4% EDTA or 37% phosphoric acid prior to visualization by scanning electron microscopy. Confocal Raman spectroscopy was carried out at 50 μm and more than 400 μm away from the dentin-enamel junction before and after mild etching. Results A novel organic protein-containing enamel matrix layer was identified for the first time using scanning electron microscopy of etched bucco-lingual sections of crowns. This layer resembles a three-dimensional fibrous meshwork that is visually distinct from enamel “tufts”. Previous studies have generally used harsher solvent conditions which likely removed this layer and precluded its prior characterization. The shape of the organic enamel layer generally reflected that of sheath regions of enamel rods and extended from the dentin-enamel junction about 100–400 μm into the cuspal enamel. This layer exhibited a Raman C—H stretching peak at ~2931 cm−1 characteristic of proteins and this signal correlated directly with the presence and location of the matrix layer as identified by scanning electron microscopy. Conclusions The enamel protein layer was most prominent close to the dentin-enamel junction and was largely absent in cuspal enamel >400 μm away from the dentin enamel junction. We hypothesize that this protein containing matrix layer could provide an important biomechanical linkage between the enamel and the dentin-enamel junction and by extension, with the dentin, of the adult tooth. PMID:22609172

Generation of strongly coupled plasmas by high power excimer laser

NASA Astrophysics Data System (ADS)

Zhu, Yongxiang; Liu, Jingru; Zhang, Yongsheng; Hu, Yun; Zhang, Jiyan; Zheng, Zhijian; Ye, Xisheng

2013-05-01

(ultraviolet). To generate strongly coupled plasmas (SCP) by high power excimer laser, an Au-CH-Al-CH target is used to make the Al sample reach the state of SCP, in which the Au layer transforms laser energy to X-ray that heating the sample by volume and the CH layers provides necessary constraints. With aid of the MULTI-1D code, we calculate the state of the Al sample and its relationship with peak intensity, width and wavelength of laser pulses. The calculated results suggest that an excimer laser with peak intensity of the magnitude of 1013W/cm2 and pulse width being 5ns - 10ns is suitable to generate SCP with the temperature being tens of eV and the density of electron being of the order of 1022/cm-3. Lasers with shorter wavelength, such as KrF laser, are preferable.

Electron Energization and Mixing Observed by MMS in the Vicinity of an Electron Diffusion Region During Magnetopause Reconnection

NASA Technical Reports Server (NTRS)

Chen, Li-Jen; Hesse, Michael; Wang, Shan; Gershman, Daniel; Ergun, Robert; Pollock, Craig; Torbert, Roy; Bessho, Naoki; Daughton, William; Dorelli, John;

Electron energization and mixing observed by MMS in the vicinity of an electron diffusion region during magnetopause reconnection

NASA Astrophysics Data System (ADS)

Chen, Li-Jen; Hesse, Michael; Wang, Shan; Gershman, Daniel; Ergun, Robert; Pollock, Craig; Torbert, Roy; Bessho, Naoki; Daughton, William; Dorelli, John; Giles, Barbara; Strangeway, Robert; Russell, Christopher; Khotyaintsev, Yuri; Burch, Jim; Moore, Thomas; Lavraud, Benoit; Phan, Tai; Avanov, Levon

2016-06-01

Measurements from the Magnetospheric Multiscale (MMS) mission are reported to show distinct features of electron energization and mixing in the diffusion region of the terrestrial magnetopause reconnection. At the ion jet and magnetic field reversals, distribution functions exhibiting signatures of accelerated meandering electrons are observed at an electron out-of-plane flow peak. The meandering signatures manifested as triangular and crescent structures are established features of the electron diffusion region (EDR). Effects of meandering electrons on the electric field normal to the reconnection layer are detected. Parallel acceleration and mixing of the inflowing electrons with exhaust electrons shape the exhaust flow pattern. In the EDR vicinity, the measured distribution functions indicate that locally, the electron energization and mixing physics is captured by two-dimensional reconnection, yet to account for the simultaneous four-point measurements, translational invariant in the third dimension must be violated on the ion-skin-depth scale.

Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

NASA Astrophysics Data System (ADS)

Li, Minghua; Shi, Hui; Dong, Yuegang; Ding, Lei; Han, Gang; Zhang, Yao; Liu, Ye; Yu, Guanghua

2017-10-01

The anisotropic magnetoresistance (AMR) and magnetic properties of NiFe films can be remarkably enhanced via CoFeB layer. In the case of an ultrathin NiFe film having a Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta structure, the CoFeB/MgO layers suppressed the formation of magnetic dead layers and the interdiffusions and interface reactions between the NiFe and Ta layers. The AMR reached a maximum value of 3.56% at 450 °C. More importantly, a single NiFe (1 1 1) peak can be formed resulting in higher AMR values for films having CoFeB layer. This enhanced AMR also originated from the significant specular reflection of electrons owing to the crystalline MgO layer, together with the sharp interfaces with the NiFe layer. These factors together resulted in higher AMR and improved magnetic properties.

Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy, transmission electron microscopy, X-ray absorption spectroscopy and X-ray photoelectron spectroscopy

DOE PAGES

Unuigbe, David M.; Harting, Margit; Jonah, Emmanuel O.; ...

2017-08-21

The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High-resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)- and (100)-oriented planes which stabilizes against further oxidation of the particles. X-ray absorption spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) measurements at the O 1s-edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milledmore » for different times. XANES results reveal the presence of the +4 (SiO 2) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2pXPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub-oxide, +1 (Si 2O), +2 (SiO) and +3 (Si 2O 3), states are present. The analysis of the change in the sub-oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.« less

Deep centers in AlGaN-based light emitting diode structures

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Mil'vidskii, M. G.; Usikov, A. S.; Pushnyi, B. V.; Lundin, W. V.

1999-10-01

Deep traps were studied in GaN homojunction and AlGaN/GaN heterojunction light emitting diode (LED) p-i-n structures by means of deep levels transient spectroscopy (DLTS), admittance and electroluminescence (EL) spectra measurements. It is shown that, in homojunction LED structures, the EL spectra comes from recombination involving Mg acceptors in-diffusing into the active i-layer. This Mg in-diffusion is strongly suppressed in heterostructures with the upper p-type layer containing about 5% of Al. As a result the main peak in the EL spectra of heterostructures is shifted toward higher energy compared to homojunctions. Joint doping of the i-layer with Zn and Si allows to shift the main EL peak to longer wavelength. The dominant electron traps observed in the studied LED structures had ionization energies of 0.55 and 0.85 eV. The dominant hole traps had apparent ionization energies of 0.85 and 0.4 eV. The latter traps were shown to be metastable and it is argued that they could be at least in part responsible for the persistent photoconductivity observed in p-GaN.

Modification of graphene electronic properties via controllable gas-phase doping with copper chloride

NASA Astrophysics Data System (ADS)

Rybin, Maxim G.; Islamova, Vera R.; Obraztsova, Ekaterina A.; Obraztsova, Elena D.

2018-01-01

Molecular doping is an efficient, non-destructive, and simple method for changing the electronic structure of materials. Here, we present a simple air ambient vapor deposition method for functionalization of pristine graphene with a strong electron acceptor: copper chloride. The doped graphene was characterized by Raman spectroscopy, UV-vis-NIR optical absorption spectroscopy, scanning electron microscopy, and electro-physical measurements performed using the 4-probe method. The effect of charge transfer from graphene to a dopant results in shifting the Fermi level in doped graphene. The change of the electronic structure of doped graphene was confirmed by the tangential Raman peak (G-peak) shift and by the appearance of the gap in the UV-vis-NIR spectrum after doping. Moreover, the charge transfer resulted in a substantial decrease in electrical sheet resistance depending on the doping level. At the highest concentration of copper chloride, a Fermi level shift into the valence band up to 0.64 eV and a decrease in the sheet resistance value by 2.36 times were observed (from 888 Ω/sq to 376 Ω/sq for a single graphene layer with 97% of transparency).

Temperature-dependent excitonic effects in the optical properties of single-layer MoS2

NASA Astrophysics Data System (ADS)

Molina-Sánchez, Alejandro; Palummo, Maurizia; Marini, Andrea; Wirtz, Ludger

2016-04-01

Temperature influences the performance of two-dimensional (2D) materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless, most ab initio studies are still performed without including any temperature effect. As a consequence, important features are thus overlooked, such as the relative height of the excitonic peaks and their broadening, directly related to the temperature and to the nonradiative exciton relaxation time. We present ab initio calculations of the optical response of single-layer MoS2, a prototype 2D material, as a function of temperature using density functional theory and many-body perturbation theory. We compute the electron-phonon interaction using the full spinorial wave functions, i.e., fully taking into account the effects of spin-orbit interaction. We find that bound excitons (A and B peaks) and resonant excitons (C peak) exhibit different behavior with temperature, displaying different nonradiative linewidths. We conclude that the inhomogeneous broadening of the absorption spectra is mainly due to electron-phonon scattering mechanisms. Our calculations explain the shortcomings of previous (zero-temperature) theoretical spectra and match well with the experimental spectra acquired at room temperature. Moreover, we disentangle the contributions of acoustic and optical phonon modes to the quasiparticles and exciton linewidths. Our model also allows us to identify which phonon modes couple to each exciton state, which is useful for the interpretation of resonant Raman-scattering experiments.

Stability of excitons in double quantum well: Through electron and holes transmission probabilities

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2017-05-01

Stability of excitons has been analyzed using the transmission probability of its constituent particles in GaAs/Al0.3Ga0.7As Double Quantum Well (DQW) structure by varying well and barrier layer thickness. The effective mass approximation is used and anisotropy in material properties are also considered to get realistic situations. It is observed that tuning barrier layer avails many resonance peaks for the transmission and tuning well width admits maximum transmission at narrow well widths. Every saddle point of the observed transmission coefficients decides the formation, strength and transportation of excitons in DQW.

Effect of Bombardment with Oxygen Ions on the Surface Composition of Polycrystalline Silver

NASA Astrophysics Data System (ADS)

Ashkhotov, O. G.; Khubezhov, S. A.; Aleroev, M. A.; Magkoev, T. T.; Grigorkina, G. S.

2018-07-01

Surface layers of polycrystalline silver bombarded with oxygen ions having energies from 100 to 300 eV are studied via Auger electron and X-ray photoelectron spectroscopies. Atomic and molecular oxygen together with silver in the zero-valence state are found in AgO and Ag2O after such treatment in silver surface layers. In addition, there is positive displacement of the Ag 3 d 3/2 peak by 0.5 eV, indicating an increase in spin-orbit splitting for Ag 3 d 5/2-Ag 3 d 3/2.

Layer-by-layer self-assembled graphene oxide/silica microsphere composites as stationary phase for high performance liquid chromatography.

PubMed

Liang, Xiaojing; Liu, Shujuan; Song, Xinwang; Zhu, Yangwen; Jiang, Shengxiang

2012-11-21

Graphene oxide (GO) has been layer-by-layer assembled onto silica microspheres to form a GO/SiO(2) composite stationary phase. All the characterizations of GO/SiO(2) by elemental analysis, Raman spectroscopy and Fourier transformed infrared spectrometry confirmed that with the increase of the assembled layer, GO gradually increases on the silica surface. The chromatographic properties of bare SiO(2) and GO/SiO(2) with different GO assembled layers show that the amount of GO plays an important role in the separation of analytes. Only the appropriate amount of GO on SiO(2) can perform a good chromatographic separation. The comparison between chromatographic performances of bare SiO(2) column, GO/SiO(2)-2 column and C18 commercial column clearly show that GO/SiO(2)-2 and C18 columns obtained a better separation; GO/SiO(2)-2 exhibits a large π-electron system and C18 exhibits hydrophobicity. The eluting order, peak width and resolution of analyte on GO/SiO(2)-2 column was highly dependent on the size of its π-electron system, while on the C18 column the decisive factor is its hydrophobic property.

Interrogating the superconductor Ca- 10(Pt 4As 8)(Fe 2-xPt xAs 2) 5 Layer-by-layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jisun; Zhu, Yimei; Nam, Hyoungdo

2016-10-14

Ever since the discovery of high-Tc superconductivity in layered cuprates, the roles that individual layers play have been debated, due to difficulty in layer-by-layer characterization. While there is similar challenge in many Fe-based layered superconductors, the newly-discovered Ca 10(Pt 4As 8)(Fe 2As 2) 5 provides opportunities to explore superconductivity layer by layer, because it contains both superconducting building blocks (Fe 2As 2 layers) and intermediate Pt 4As 8 layers. Cleaving a single crystal under ultra-high vacuum results in multiple terminations: an ordered Pt 4As 8 layer, two reconstructed Ca layers on the top of a Pt 4As 8 layer, andmore » disordered Ca layer on the top of Fe 2As 2 layer. The electronic properties of individual layers are studied using scanning tunneling microscopy/spectroscopy (STM/S), which reveals different spectra for each surface. Remarkably superconducting coherence peaks are seen only on the ordered Ca/Pt 4As 8 layer. Our results indicate that an ordered structure with proper charge balance is required in order to preserve superconductivity.« less

Interrogating the superconductor Ca10(Pt4As8)(Fe2-xPtxAs2)5 Layer-by-layer.

PubMed

Kim, Jisun; Nam, Hyoungdo; Li, Guorong; Karki, A B; Wang, Zhen; Zhu, Yimei; Shih, Chih-Kang; Zhang, Jiandi; Jin, Rongying; Plummer, E W

2016-10-14

Ever since the discovery of high-T c superconductivity in layered cuprates, the roles that individual layers play have been debated, due to difficulty in layer-by-layer characterization. While there is similar challenge in many Fe-based layered superconductors, the newly-discovered Ca 10 (Pt 4 As 8 )(Fe 2 As 2 ) 5 provides opportunities to explore superconductivity layer by layer, because it contains both superconducting building blocks (Fe 2 As 2 layers) and intermediate Pt 4 As 8 layers. Cleaving a single crystal under ultra-high vacuum results in multiple terminations: an ordered Pt 4 As 8 layer, two reconstructed Ca layers on the top of a Pt 4 As 8 layer, and disordered Ca layer on the top of Fe 2 As 2 layer. The electronic properties of individual layers are studied using scanning tunneling microscopy/spectroscopy (STM/S), which reveals different spectra for each surface. Remarkably superconducting coherence peaks are seen only on the ordered Ca/Pt 4 As 8 layer. Our results indicate that an ordered structure with proper charge balance is required in order to preserve superconductivity.

Spectra of electrons emitted as a result of the sticking and annihilation of low energy positrons to the surfaces of graphene and highly oriented pyrolytic graphite (HOPG)

NASA Astrophysics Data System (ADS)

Chrysler, M.; Chirayath, V.; McDonald, A.; Lim, Z.; Shastry, K.; Gladen, R.; Fairchild, A.; Koymen, A.; Weiss, A.

Positron annihilation induced Auger electron spectroscopy (PAES) was used to study the positron induced low energy electron spectra from HOPG and a sample composed of 6-8 layers of graphene grown on polycrystalline copper. A low energy (~2eV) beam of positrons was used to implant positrons into a surface localized state on the graphene and HOPG samples. Measurements of the energy spectra of the positron induced electrons obtained using a TOF spectrometer indicate the presence of an annihilation induced KLL C Auger peak (at ~263 eV) along with a narrow low energy secondary peak due to an Auger mediated positron sticking (AMPS) process. A broad spectral feature was also observed below ~15 eV which we believe may be due to a VVV C Auger transition not previously observed. The energy dependence of the integrated intensity of the AMPS peak was measured for a series of incident positron kinetic energies ranging from ~1.5 eV up to 11 eV from which the binding energy of the surface localized positron state on graphene and HOPG was estimated. The implication of our results regarding the applicability of AMPS and PAES to the study of graphene surfaces and interfaces will be discussed. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Nilsson, D.; Danielsson, Ö.

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less

Layer-dependent second-order Raman intensity of Mo S2 and WS e2 : Influence of intervalley scattering

NASA Astrophysics Data System (ADS)

Qian, Qingkai; Zhang, Zhaofu; Chen, Kevin J.

2018-04-01

Acoustic-phonon Raman scattering, as a defect-induced second-order Raman scattering process (with incident photon scattered by one acoustic phonon at the Brillouin-zone edge and the momentum conservation fulfilled by defect scattering), is used as a sensitive tool to study the defects of transition-metal dichalcogenides (TMDs). Moreover, second-order Raman scattering processes are closely related to the valley depolarization of single-layer TMDs in potential valleytronic applications. Here, the layer dependence of second-order Raman intensity of Mo S2 and WS e2 is studied. The electronic band structures of Mo S2 and WS e2 are modified by the layer thicknesses; hence, the resonance conditions for both first-order and second-order Raman scattering processes are tuned. In contrast to the first-order Raman scattering, second-order Raman scattering of Mo S2 and WS e2 involves additional intervalley scattering of electrons by phonons with large momenta. As a result, the electron states that contribute most to the second-order Raman intensity are different from that to first-order process. A weaker layer-tuned resonance enhancement of second-order Raman intensity is observed for both Mo S2 and WS e2 . Specifically, when the incident laser has photon energy close to the optical band gap and the Raman spectra are normalized by the first-order Raman peaks, single-layer Mo S2 or WS e2 has the strongest second-order Raman intensity. This layer-dependent second-order Raman intensity can be further utilized as an indicator to identify the layer number of Mo S2 and WS e2 .

Role of different chelating agent in synthesis of copper doped tin oxide (Cu-SnO2) nanoparticles

NASA Astrophysics Data System (ADS)

Saravanakumar, B.; Anusiya, A.; Rani, B. Jansi; Ravi, G.; Yuvakkumar, R.

2018-05-01

An attempt was made to synthesis the copper doped tin oxide (Cu-SnO2) nanoparticles by adopting different chelating agents (NaOH, KOH and C2H2O4) by Sol-gel process. The synthesized products were characterized by XRD, Photoluminescence (PL), Infra- Red (FTIR) and SEM analysis. The XRD confirms the formation of Cu-SnO2 shows the maximum peak at 33.8° with lattice plane (101). The PL peak at 361 and 382 nm due to the recombination of electron in conduction band to valence band infers the optical properties. The IR spectra correspond to the peak at 551 and 620 cm-1 attributed to the characteristics peak for Cu-SnO2 nanoparticles. The SEM images for all three Cu-SnO2 nanoparticles formed by three chelating agent (NaOH, KOH and C2H2O4) facilitates the formation mechanism and the chelating agent Oxalic acid results in formation of nano flowers with diverse layers orientated in random direction. Further SEM studies reveal that, the Cu-SnO2 nanoparticles formed by oxalic acid could posses high surface area with large number layered structured enables the better electrochemical properties and its applications.

Internal structure of laser supported detonation waves by two-wavelength Mach-Zehnder interferometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimamura, Kohei; Kawamura, Koichi; Fukuda, Akio

Characteristics of the internal structure of the laser supported detonation (LSD) waves, such as the electron density n{sub e} and the electron temperature T{sub e} profiles behind the shock wave were measured using a two-wavelength Mach-Zehnder interferometer along with emission spectroscopy. A TEA CO{sub 2} laser with energy of 10 J/pulse produced explosive laser heating in atmospheric air. Results show that the peak values of n{sub e} and T{sub e} were, respectively, about 2 x 10{sup 24} m{sup -3} and 30 000 K, during the LSD regime. The temporal variation of the laser absorption coefficient profile estimated from the measuredmore » properties reveals that the laser energy was absorbed perfectly in a thin layer behind the shock wave during the LSD regime, as predicted by Raizer's LSD model. However, the absorption layer was much thinner than a plasma layer, the situation of which was not considered in Raizer's model. The measured n{sub e} at the shock front was not zero while the LSD was supported, which implies that the precursor electrons exist ahead of the shock wave.« less

Third-order optical nonlinearity studies of bilayer Au/Ag metallic films

NASA Astrophysics Data System (ADS)

Mezher, M. H.; Chong, W. Y.; Zakaria, R.

2016-05-01

This paper presents nonlinear optical studies of bilayer metallic films of gold (Au) and silver (Ag) on glass substrate prepared using electron beam evaporation. The preparation of Au and Ag nanoparticles (NPs) on the substrate involved the use of electron beam deposition, then thermal annealing at 600 °C and 270 °C, respectively, to produce a randomly distributed layer of Au and a layer of Ag NPs. Observation of field-effect scanning electron microscope images indicated the size of the NPs. Details of the optical properties related to peak absorption of surface plasmon resonance of the nanoparticle were revealed by use of UV-Vis spectroscopy. The Z-scan technique was used to measure the nonlinear absorption and nonlinear refraction of the fabricated NP layers. The third-order nonlinear refractive index coefficients for Au and Ag are (-9.34 and  -1.61)  ×  10-11 cm2 W-1 given lower n 2, in comparison with bilayer (Au and Ag) NPs at  -1.24  ×  10-10 cm2 W-1. The results show bilayer NPs have higher refractive index coefficients thus enhance the nonlinearity effects.

Ionospheric scale height from the refraction of satellite signals.

NASA Technical Reports Server (NTRS)

Heron, M. L.; Titheridge, J. E.

1972-01-01

Accurate observations of the elevation angle of arrival of 20 MHz signals from the polar orbiting satellite Beacon-B for a 20 month period have provided transmission ionograms which may be reduced to give Hp the scale height at the peak of the ionosphere. Noon seasonal averages of Hp are 1.35 (in winter) to 1.55 (in summer) times greater than the scale height obtained from bottom-side ionograms. A comparison of scale height at the peak with routine measurements of total content and peak electron density indicates that the O+/H+ transition level is above 1000 km during the day but comes down to about 630 km on winter nights. A predawn peak in the overall scale height is caused by a lowering of the layer to a region of increased recombination and is magnified in winter by low O+/H+ transition levels.

Detailed line shape analysis of the C KVV Auger peak of two carbon allotropes measured using a time of flight positron annihilation induced Auger electron spectrometer

NASA Astrophysics Data System (ADS)

Fairchild, A. J.; Chirayath, V. A.; Chrysler, M. D.; Gladen, R. W.; Imam, S. K.; Koymen, A. R.; Weiss, A. H.

We report a detailed line shape analysis of the positron induced C KVV Auger line shape from highly oriented pyrolytic graphite (HOPG) and a single layer of graphene grown on polycrystalline Cu. A model consisting of the self-fold of the one-electron density of states including terms for hole-hole interactions, charge screening effects, and intrinsic loss mechanisms is compared to experimental C KVV line shapes measured using a positron induced Auger electron spectrometer (PAES). In traditional Auger spectroscopies which use an electron or photon to initiate the Auger process, extracting the relatively small Auger signal from the large secondary background can be quite difficult. Using a very low energy positron beam to create the core hole through an anti-matter matter annihilation entirely eliminates this background. Additionally, PAES has sensitivity to the top most atomic layer since the positron becomes trapped in an image potential well at the surface before annihilation. Therefore, the PAES signal from a single layer of graphene on polycrystalline Cu is primarily from the graphene overlayer with small contributions from the Cu substrate while the PAES signal from HOPG can be viewed as a single graphene layer with a graphite substrate. The influence of these two substrates on C KVV line shape is discussed. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Mueller, C. H.; Croke, E. T.

2003-01-01

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Synthesis, Characterization, and Fabrication of All Inorganic Quantum Dot LEDs

NASA Astrophysics Data System (ADS)

Salman, Haider Baqer

Quantum Dot LEDs with all inorganic materials are investigated in this thesis. The research was motivated by the potential disruptive technology of core shell quantum dots in lighting and display applications. These devices consisted of three main layers: hole transport layer (HTL), electron transport layer (ETL), and emissive layer where the emission of photons occurs. The latter part was formed of CdSe / ZnS core-shell quantum dots, which were synthesized following hot injection method. The ETL and the HTL were formed of zinc oxide nanocrystals and nickel oxide, respectively. Motivated by the low cost synthesis and deposition, NiO and ZnO were synthesized following sol-gel method and deposited using spin coating. The anode of the device was a commercial slide of indium tin oxide deposited on glass substrate while the cathode was a 100 nm aluminum layer that was deposited using an Auto 306T Edwards thermal evaporator. In this research, Raman spectroscopy, micro-photoluminescence spectroscopy, absorbance spectroscopy, X-ray diffraction (XRD) spectroscopy, and atomic force microscopy, were used to characterize the materials. Three sharp peaks were observed in the XRD measurements of the NiO thin film related to three planes and indicated a proper level of crystallinity. The AFM image of the same material indicated a roughness RMS value of 2 nm which was accepted for a device fabrication. The photoluminescence spectrum exhibited a peak at 515 nm for the quantum dots and a peak at 315 nm for the ZnO nanocrystals. The narrow shape of these spectra proved a limited amount of size variation. The transfer characteristics of the fabricated device indicated that the current density ramped up producing green light when the voltage was higher than 5 V to reach 160 mA cm -2 at 9 V.

Electron-spectroscopy and -diffraction study of the conductivity of CVD diamond ( 0 0 1 )2×1 surface

NASA Astrophysics Data System (ADS)

Kono, S.; Takano, T.; Shimomura, M.; Goto, T.; Sato, K.; Abukawa, T.; Tachiki, M.; Kawarada, H.

2003-04-01

A chemical vapor deposition as-grown diamond (0 0 1) single-domain 2 × 1 surface was studied by electron-spectroscopy and electron-diffraction in ultrahigh vacuum (UHV). In order to change the surface conductivity (SC) of the diamond in UHV, three annealing stages were used; without annealing, annealing at 300 °C and annealing at 550 °C. From low energy electron diffraction and X-ray photoelectron spectroscopic (XPS) studies, an existence of SC was suggested for the first two stages of annealing and an absence of SC was suggested for the last stage of annealing. Changes in C KVV Auger electron spectroscopic spectra, C KVV Auger electron diffraction (AED) patterns and C 1s XPS peak positions were noticed between the annealing stages at 300 and 550 °C. These changes are interpreted as such that the state of hydrogen involvement in a subsurface of diamond (0 0 1)2 × 1 changes as SC changes. In particular, the presence of local disorder in diamond configuration in SC subsurface is pointed out from C KVV AED. From C 1s XPS peak shifts, a lower bound for the Fermi-level for SC layers from the valence band top is presented to be ˜0.5 eV.

Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes.

PubMed

Darbandi, A; Kavanagh, K L; Watkins, S P

2015-08-12

GaAs core-shell p-n junction tunnel diodes were demonstrated by combining vapor-liquid-solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core-shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm(2) point the way to applications in core-shell photovoltaics and tunnel field effect transistors.

Variations in Ionospheric Peak Electron Density During Sudden Stratospheric Warmings in the Arctic Region

NASA Astrophysics Data System (ADS)

Yasyukevich, A. S.

2018-04-01

The focus of the paper is the ionospheric disturbances during sudden stratospheric warming (SSW) events in the Arctic region. This study examines the ionospheric behavior during 12 SSW events, which occurred in the Northern Hemisphere over 2006-2013, based on vertical sounding data from DPS-4 ionosonde located in Norilsk (88.0°E, 69.2°N). Most of the addressed events show that despite generally quiet geomagnetic conditions, notable changes in the ionospheric behavior are observed during SSWs. During the SSW evolution and peak phases, there is a daytime decrease in NmF2 values at 10-20% relative to background level. After the SSW maxima, in contrast, midday NmF2 surpasses the average monthly values for 10-20 days. These changes in the electron density are observed for both strong and weak stratospheric warmings occurring at midwinter. The revealed SSW effects in the polar ionosphere are assumed to be associated with changes in the thermospheric neutral composition, affecting the F2-layer electron density. Analysis of the Global Ultraviolet Imager data revealed the positive variations in the O/N2 ratio within the thermosphere during SSW peak and recovery periods. Probable mechanisms for SSW impact on the state of the high-latitude neutral thermosphere and ionosphere are discussed.

Electronic structure and optical properties of twisted bilayer graphene calculated via time evolution of states in real space

NASA Astrophysics Data System (ADS)

Le, H. Anh; Do, V. Nam

2018-03-01

We investigate the electronic and optical properties of twisted bilayer graphene with arbitrary twist angles θ . Our results are based on a method of evolving in time quantum states in lattice space. We propose an efficient scheme of sampling lattice nodes that helps to reduce significantly computational cost, particularly for tiny twist angles. We demonstrate the continuous variation of the density of states and the optical conductivity with respect to the twist angle. It indicates that the commensurability between the two graphene layers does not play an essential role in governing the electronic and optical properties. We point out that, for the twist angles roughly in the range 0 .1∘<θ <3∘ , the density of states in the vicinity of the Fermi energy exhibits the typical W shape with a small peak locating at the Fermi energy. This peak is formed as the merging of two van Hove peaks and reflects the appearance of states strongly localized in the AA-like region of moiré zones. When decreasing the twist angle to zero, the W shape is gradually transformed to the U shape, which is seen as the behavior of the density of states in the limit of θ →0∘ .

The Relationship between Ionospheric Slab Thickness and the Peak Density Height, hmF2

NASA Astrophysics Data System (ADS)

Meehan, J.; Sojka, J. J.

2017-12-01

The electron density profile is one of the most critical elements in the ionospheric modeling-related applications today. Ionosphere parameters, hmF2, the height of the peak density layer, and slab thickness, the ratio of the total electron content, TEC, to the peak density value, NmF2, are generally obtained from any global sounding observation network and are easily incorporated into models, theoretical or empirical, as numerical representations. Slab thickness is a convenient one-parameter summary of the electron density profile and can relate a variety of elements of interest that effect the overall electron profile shape, such as the neutral and ionospheric temperatures and gradients, the ionospheric composition, and dynamics. Using ISR data from the 2002 Millstone Hill ISR data campaign, we found, for the first time, slab thickness to be correlated to hmF2. For this, we introduce a new ionospheric index, k, which ultimately relates electron density parameters and can be a very useful tool for describing the topside ionosphere shape. Our study is an initial one location, one season, 30-day study, and future work is needed to verify the robustness of our claim. Generally, the ionospheric profile shape, requires knowledge of several ionospheric parameters: electron, ion and neutral temperatures, ion composition, electric fields, and neutral winds, and is dependent upon seasons, local time, location, and the level of solar and geomagnetic activity; however, with this new index, only readily-available, ionospheric density information is needed. Such information, as used in this study, is obtained from a bottomside electron density profile provided by an ionosonde, and TEC data provided by a local, collocated GPS receiver.

SAMI3_ICON: Model of the Ionosphere/Plasmasphere System

NASA Astrophysics Data System (ADS)

Huba, J. D.; Maute, A.; Crowley, G.

2017-10-01

The NRL ionosphere/plasmasphere model SAMI3 has been modified to support the NASA ICON mission. Specifically, SAMI3_ICON has been modified to import the thermospheric composition, temperature, and winds from TIEGCM-ICON and the high-latitude potential from AMIE data. The codes will be run on a daily basis during the ICON mission to provide ionosphere and thermosphere properties to the science community. SAMI3_ICON will provide ionospheric and plasmaspheric parameters such as the electron and ion densities, temperatures, and velocities, as well as the total electron content (TEC), peak ionospheric electron density (NmF2) and height of the F layer at NmF2 (hmF2).

Multispacecraft observations of the electron current sheet, neighboring magnetic islands, and electron acceleration during magnetotail reconnection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Lijen; Bessho, Naoki; Bhattacharjee, Amitava

Open questions concerning structures and dynamics of diffusion regions and electron acceleration in collisionless magnetic reconnection are addressed based on data from the four-spacecraft mission Cluster and particle-in-cell simulations. Using time series of electron distribution functions measured by the four spacecraft, distinct electron regions around a reconnection layer are mapped out to set the framework for studying diffusion regions. A spatially extended electron current sheet (ecs), a series of magnetic islands, and bursts of energetic electrons within islands are identified during magnetotail reconnection with no appreciable guide field. The ecs is collocated with a layer of electron-scale electric fields normalmore » to the ecs and pointing toward the ecs center plane. Both the observed electron and ion densities vary by more than a factor of 2 within one ion skin depth north and south of the ecs, and from the ecs into magnetic islands. Within each of the identified islands, there is a burst of suprathermal electrons whose fluxes peak at density compression sites [L.-J. Chen et al., Nat. Phys. 4, 19 (2008)] and whose energy spectra exhibit power laws with indices ranging from 6 to 7.3. These results indicate that the in-plane electric field normal to the ecs can be of the electron scale at certain phases of reconnection, electrons and ions are highly compressible within the ion diffusion region, and for reconnection involving magnetic islands, primary electron acceleration occurs within the islands.« less

Theory of High-T{sub c} Superconducting Cuprates Based on Experimental Evidence

DOE R&D Accomplishments Database

Abrikosov, A. A.

1999-12-10

A model of superconductivity in layered high-temperature superconducting cuprates is proposed, based on the extended saddle point singularities in the electron spectrum, weak screening of the Coulomb interaction and phonon-mediated interaction between electrons plus a small short-range repulsion of Hund's, or spin-fluctuation, origin. This permits to explain the large values of T{sub c}, features of the isotope effect on oxygen and copper, the existence of two types of the order parameter, the peak in the inelastic neutron scattering, the positive curvature of the upper critical field, as function of temperature etc.

Scanning tunneling spectroscopic (STS) studies of the bulk magnetic doping effects on the surface state of Bi2Se3

NASA Astrophysics Data System (ADS)

Chen, C.-C.; Teague, M. L.; Woodward, N. D.; Yeh, N.-C.; He, L.; Kou, X.; Lang, M.; Wang, K.-L.

2014-03-01

We report STS studies of MBE-grown undoped and Cr-doped Bi2Se3 bi-layers on InP (111) and as a function of the updoped layer thickness and the Cr-doping level (x) . Our studies reveal gapless Dirac spectra at all temperatures (T) for samples with an undoped top layer larger than 5 QLs, implying that the interlayer magnetic correlation length ξ⊥ is < ~ 5-QL. For samples with an undoped top layer smaller than 5 QLs, STS reveals gapped spectra at T

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment.

PubMed

Yan, Rusen; Fathipour, Sara; Han, Yimo; Song, Bo; Xiao, Shudong; Li, Mingda; Ma, Nan; Protasenko, Vladimir; Muller, David A; Jena, Debdeep; Xing, Huili Grace

2015-09-09

van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibits novel physics phenomena that can power a range of electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse, and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions and broaden the potential applications of 2D layered materials.

Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

PubMed

Komolov, A S; Akhremtchik, S N; Lazneva, E F

2011-08-15

The paper reports the results on the interface formation of 5-10 nm thick conjugated layers of Cu-phthalocyanine (CuPc) with a number of solid surfaces: polycrystalline Au, (SiO(2))n-Si, ZnO(0 0 0 1), Si(1 0 0), Ge(1 1 1), CdS(0 0 0 1) and GaAs(1 0 0). The results were obtained using Auger electron spectroscopy (AES) and low-energy target current electron spectroscopy (TCS). The organic overlayers were thermally deposited in situ in UHV onto substrate surfaces. The island-like organic deposits were excluded from the analysis so that only uniform organic deposits were considered. In the cases of polycrystalline Au, Si(1 0 0) and Ge(1 1 1) substrates the AES peaks of the substrate material attenuated down to the zero noise level upon the increase of the CuPc film thickness of 8-10 nm. The peaks corresponding to oxygen atoms in the case of SiO(2) substrate, and to atoms from the ZnO, GaAs and CdS substrates were clearly registered in the AES spectra of the 8-10 nm thick CuPc deposits. The relative concentration of the substrate atomic components diffused into the film was different from their relative concentration at the pure substrate surface. The concentration of the substrate dopant atoms in the CuPc film was estimated as one atom per one CuPc molecule. Using the target current electron spectroscopy, it was shown that the substrate atoms admixed in the CuPc film account for the appearance of a new peak in the density of unoccupied electronic states. Formation of intermediate TCS spectra until the CuPc deposit reaches 2-3 nm was observed in the cases of GaAs(1 0 0), ZnO(0 0 0 1), Ge(1 1 1) surfaces. The intermediate spectra show a less pronounced peak structure different from the one typical for the CuPc films. It was suggested that the intermediate layer was formed by the CuPc molecules fully or partially decomposed due to the interaction with the relatively reactive semiconductor surfaces. Copyright © 2010 Elsevier B.V. All rights reserved.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Measurement of fundamental illite particle thicknesses by X-ray diffraction using PVP-10 intercalation

USGS Publications Warehouse

Eberl, D.D.; Nüesch, R.; Šucha, Vladimír; Tsipursky, S.

1998-01-01

The thicknesses of fundamental illite particles that compose mixed-layer illite-smectite (I-S) crystals can be measured by X-ray diffraction (XRD) peak broadening techniques (Bertaut-Warren-Averbach [BWA] method and integral peak-width method) if the effects of swelling and XRD background noise are eliminated from XRD patterns of the clays. Swelling is eliminated by intercalating Na-saturated I-S with polyvinylpyrrolidone having a molecular weight of 10,000 (PVP-10). Background is minimized by using polished metallic silicon wafers cut perpendicular to (100) as a substrate for XRD specimens, and by using a single-crystal monochromator. XRD measurements of PVP-intercalated diagenetic, hydrothermal and low-grade metamorphic I-S indicate that there are at least 2 types of crystallite thickness distribution shapes for illite fundamental particles, lognormal and asymptotic; that measurements of mean fundamental illite particle thicknesses made by various techniques (Bertant-Warren-Averbach, integral peak width, fixed cation content, and transmission electron microscopy [TEM]) give comparable results; and that strain (small differences in layer thicknesses) generally has a Gaussian distribution in the log-normal-type illites, but is often absent in the asymptotic-type illites.

Helicon double layer thruster operation in a low magnetic field mode

NASA Astrophysics Data System (ADS)

Harle, T.; Pottinger, S. J.; Lappas, V. J.

2013-02-01

Direct thrust measurements are made of a helicon double layer thruster operating in a low magnetic field mode. The relationship between the imposed axial magnetic field and generated thrust is investigated for a radio frequency input power range 200-500 W for propellant flow rates of 16.5 and 20 sccm (0.46 and 0.55 mg s-1) of argon. The measured thrust shows a strong dependence on the magnetic field strength, increasing by up to a factor of 5 compared with the minimum thrust level recorded. A peak thrust of 0.4-1.1 mN depending on thruster operating conditions is obtained. This increase is observed to take place over a small range of peak magnetic field strengths in the region of 70-110 G. The magnitude of the thrust and the corresponding magnitude of the magnetic field at which the peak thrust occurs is shown to increase with increasing input power for a given propellant flow rate. The ion current determined using a retarding field energy analyser and the electron number density found using a microwave resonator probe both correlate with the observed trend in thrust as a function of applied magnetic field.

Watching Electrons Transfer from Metals to Insulators using Two Photon Photoemission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johns, James E.

2010-05-01

Ultrafast angle-resolved two photon photoemission was used to study the dynamics and interfacial band structure of ultrathin films adsorbed onto Ag(111). Studies focused on the image potential state (IPS) in each system as a probe for measuring changes in electronic behavior in differing environments. The energetics and dynamics of the IPS at the toluene/Ag(111) interface are strongly dependent upon coverage. For a single monolayer, the first IPS is bound by 0.81 eV below the vacuum level and has a lifetime of 50 femtoseconds (fs). Further adsorption of toluene creates islands of toluene with an exposed wetting layer underneath. The IPSmore » is then split into two peaks, one corresponding to the islands and one corresponding to the monolayer. The wetting layer IPS shows the same dynamics as the monolayer, while the lifetime of the islands increases exponentially with increasing thickness. Furthermore, the island IPS transitions from delocalized to localized within 500 fs, and electrons with larger parallel momenta decay much faster. Attempts were made using a stochastic model to extract the rates of localization and intraband cooling at differing momenta. In sexithiophene (6T) and dihexyl-sexithiophene (DH6T), the IPS was used as a probe to see if the nuclear motion of spectating side chains can interfere with molecular conduction. The energy and band mass of the IPS was measured for 6T and two geometries of DH6T on Ag(111). Electrons injected into the thicker coverages of DH6T grew exponentially heavier until they were completely localized by 230 fs, while those injected into 6T remained nearly free electron like. Based off of lifetime arguments and the density of defects, the most likely cause for the mass enhancement of the IPS in this system is small polaron formation caused by coupling of the electron to vibrations of the alkyl substituents. The energetic relaxation of the molecular adsorbate was also measured to be 20 meV/100 fs for the DH6T, and 0 meV/100 fs for the 6T. This relaxation is consistent with the localization of the charge creating a barrier for it moving from one lattice site to a neighboring one. Finally, the IPS was used to study the evolution of the surface band gap at the Mg/Ag(111) interface. The Mg(0001) surface band gap lies 1.6 eV below the Fermi level, and consequently shows no peak in the projected density of states for the IPS. A method for creating layer by layer growth of Mg on Ag(111) was determined using Auger Spectroscopy and low energy electron diffraction. By monitoring the decay of the intensity of the IPS versus coverage, it was determined that four layers of magnesium on Ag(111) is sufficient to completely eliminate the surface band gap« less

Anomalous Ionospheric signatures observed at low-mid latitude Indian station Delhi prior to earthquake events during the year 2015 to early 2016.

NASA Astrophysics Data System (ADS)

Upadhayaya, A. K.; Gupta, S.; Kotnala, R. K.

2017-12-01

Five major earthquake events measuring greater than six on Richter scale (M>6) that occurred during the year 2015 to early 2016, affecting Indian region ionosphere, are analyzed using F2 layer critical parameters (foF2, hmF2) obtained using Digisonde from a low-mid latitude Indian station, Delhi (28.6°N, 77.2°E, 19.2°N Geomagnetic latitude, 42.4°N Dip). Normal day-to-day variability occurring in ionosphere is segregated by calculating F2 layer critical frequency and peak height variations (ΔfoF2, ΔhmF2) from the normal quiet time behavior. We find that the ionospheric F2 region across Delhi by and large shows some significant perturbations 3-4 days prior to these earthquake events, resulting in a large peak electron density variation of 200%. These observed perturbations indicate towards a possibility of seismo-ionospheric coupling as the solar and geomagnetic indices were normally quiet and stable during the period of these events. It was also observed that the precursory effect of earthquake was predominantly seen even outside the earthquake preparation zone, as given by Dobrovolsky et al. [1979]. The thermosphere neutral composition (O/N2) as observed by GUVI [Christensen et al., 2003], across Delhi, during these earthquake events does not show any marked variation. Further, the effect of earthquake events on ionospheric peak electron density is compared to the lower atmosphere meteorological phenomenon of 2015 Sudden Stratospheric Warming event and are found to be comparable.

Characterization of TEM Moiré Patterns Originating from Two Monolayer Graphenes Grown on the Front and Back Sides of a Copper Substrate by CVD Method

NASA Astrophysics Data System (ADS)

Yamazaki, Kenji; Maehara, Yosuke; Gohara, Kazutoshi

2018-06-01

The number of layers affects the electronic properties of graphene owing to its unique band structure, called the Dirac corn. Raman spectroscopy is a key diagnostic tool for identifying the number of graphene layers and for determining their physical properties. Here, we observed moiré structures in transmission electron microscopy (TEM) observations; these are signature patterns in multilayer, although Raman spectra showed the typical intensity of the 2D/G peak in the monolayer. We also performed a multi-slice TEM image simulation to compare the 3D atomic structures of the two graphene membranes with experimental TEM images. We found that the experimental moiré image was constructed with a 9-12 Å interlayer distance between graphene membranes. This structure was constructed by transferring CVD-grown graphene films that formed on both sides of the Cu substrate at once.

Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

NASA Astrophysics Data System (ADS)

Pantzas, K.; Rogers, D. J.; Bove, P.; Sandana, V. E.; Teherani, F. H.; El Gmili, Y.; Molinari, M.; Patriarche, G.; Largeau, L.; Mauguin, O.; Suresh, S.; Voss, P. L.; Razeghi, M.; Ougazzaden, A.

2016-02-01

p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.

Polarized iridescence of the multilayered elytra of the Japanese jewel beetle, Chrysochroa fulgidissima

PubMed Central

Stavenga, Doekele G.; Wilts, Bodo D.; Leertouwer, Hein L.; Hariyama, Takahiko

2011-01-01

The elytra of the Japanese jewel beetle Chrysochroa fulgidissima are metallic green with purple stripes. Scanning electron microscopy and atomic force microscopy demonstrated that the elytral surface is approximately flat. The accordingly specular green and purple areas have, with normal illumination, 100–150 nm broad reflectance bands, peaking at about 530 and 700 nm. The bands shift progressively towards shorter wavelengths with increasing oblique illumination, and the reflection then becomes highly polarized. Transmission electron microscopy revealed that the epicuticle of the green and purple areas consists of stacks of 16 and 12 layers, respectively. Assuming gradient refractive index values of the layers between 1.6 and 1.7 and applying the classical multilayer theory allowed modelling of the measured polarization- and angle-dependent reflectance spectra. The extreme polarized iridescence exhibited by the elytra of the jewel beetle may have a function in intraspecific recognition. PMID:21282175

Large theoretical thermoelectric power factor of suspended single-layer MoS{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babaei, Hasan, E-mail: babaei@illinois.edu, E-mail: babaei@auburn.edu; Mechanical Engineering Department, Auburn University, Auburn, Alabama 36849-5341; Khodadadi, J. M.

2014-11-10

We have calculated the semi-classical thermoelectric power factor of suspended single-layer (SL)- MoS{sub 2} utilizing electron relaxation times derived from ab initio calculations. Measurements of the thermoelectric power factor of SL-MoS{sub 2} on substrates reveal poor power factors. In contrast, we find the thermoelectric power factor of suspended SL-MoS{sub 2} to peak at ∼2.8 × 10{sup 4} μW/m K{sup 2} at 300 K, at an electron concentration of 10{sup 12} cm{sup −2}. This figure is higher than that in bulk Bi{sub 2}Te{sub 3}, for example. Given its relatively high thermal conductivity, suspended SL-MoS{sub 2} may hold promise for in-plane thin-film Peltiermore » coolers, provided reasonable mobilities can be realized.« less

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.

PubMed

Zhang, Lichun; Li, Qingshan; Shang, Liang; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2013-07-15

n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

Ionospheric Peak Electron Density and Performance Evaluation of IRI-CCIR Near Magnetic Equator in Africa During Two Extreme Solar Activities

NASA Astrophysics Data System (ADS)

Adebesin, B. O.; Rabiu, A. B.; Obrou, O. K.; Adeniyi, J. O.

2018-03-01

The F2 layer peak electron density (NmF2) was investigated over Korhogo (Geomagnetic: 1.26°S, 67.38°E), a station near the magnetic equator in the African sector. Data for 1996 and 2000 were, respectively, categorized into low solar quiet and disturbed and high solar quiet and disturbed. NmF2 prenoon peak was higher than the postnoon peak during high solar activity irrespective of magnetic activity condition, while the postnoon peak was higher for low solar activity. Higher NmF2 peak amplitude characterizes disturbed magnetic activity than quiet magnetic condition for any solar activity. The maximum peaks appeared in equinox. June solstice noontime bite out lagged other seasons by 1-2 h. For any condition of solar and magnetic activities, the daytime NmF2 percentage variability (%VR) measured by the relative standard deviation maximizes/minimizes in June solstice/equinox. Daytime variability increases with increasing magnetic activity. The highest peak in the morning time NmF2 variability occurs in equinox, while the highest evening/nighttime variability appeared in June solstice for all solar/magnetic conditions. The nighttime annual variability amplitude is higher during disturbed than quiet condition regardless of solar activity period. At daytime, variability is similar for all conditions of solar activities. NmF2 at Korhogo is well represented on the International Reference Ionosphere-International Radio Consultative Committee (IRI-CCIR) option. The model/observation relationship performed best between local midnight and postmidnight period (00-08 LT). The noontime trough characteristics is not prominent in the IRI pattern during high solar activity but evident during low solar conditions when compared with Korhogo observations. The Nash-Sutcliffe coefficients revealed better model performance during disturbed activities.

Effective D-A-D type chromophore of fumaronitrile-core and terminal alkylated bithiophene for solution-processed small molecule organic solar cells.

PubMed

Nazim, M; Ameen, Sadia; Seo, Hyung-Kee; Shin, Hyung Shik

2015-06-12

A new and novel organic π-conjugated chromophore (named as RCNR) based on fumaronitrile-core acceptor and terminal alkylated bithiophene was designed, synthesized and utilized as an electron-donor material for the solution-processed fabrication of bulk-heterojunction (BHJ) small molecule organic solar cells (SMOSCs). The synthesized organic chromophore exhibited a broad absorption peak near green region and strong emission peak due to the presence of strong electron-withdrawing nature of two nitrile (-CN) groups of fumaronitrile acceptor. The highest occupied molecular orbital (HOMO) energy level of -5.82 eV and the lowest unoccupied molecular orbital (LUMO) energy level of -3.54 eV were estimated for RCNR due to the strong electron-accepting tendency of -CN groups. The fabricated SMOSC devices with RCNR:PC60BM (1:3, w/w) active layer exhibited the reasonable power conversion efficiency (PCE) of ~2.69% with high short-circuit current density (JSC) of ~9.68 mA/cm(2) and open circuit voltage (VOC) of ~0.79 V.

Effective D-A-D type chromophore of fumaronitrile-core and terminal alkylated bithiophene for solution-processed small molecule organic solar cells

PubMed Central

Nazim, M.; Ameen, Sadia; Seo, Hyung-Kee; Shin, Hyung Shik

2015-01-01

A new and novel organic π-conjugated chromophore (named as RCNR) based on fumaronitrile-core acceptor and terminal alkylated bithiophene was designed, synthesized and utilized as an electron-donor material for the solution-processed fabrication of bulk-heterojunction (BHJ) small molecule organic solar cells (SMOSCs). The synthesized organic chromophore exhibited a broad absorption peak near green region and strong emission peak due to the presence of strong electron-withdrawing nature of two nitrile (–CN) groups of fumaronitrile acceptor. The highest occupied molecular orbital (HOMO) energy level of –5.82 eV and the lowest unoccupied molecular orbital (LUMO) energy level of –3.54 eV were estimated for RCNR due to the strong electron-accepting tendency of –CN groups. The fabricated SMOSC devices with RCNR:PC60BM (1:3, w/w) active layer exhibited the reasonable power conversion efficiency (PCE) of ~2.69% with high short-circuit current density (JSC) of ~9.68 mA/cm2 and open circuit voltage (VOC) of ~0.79 V. PMID:26066557

Investigation of merging/reconnection heating during solenoid-free startup of plasmas in the MAST Spherical Tokamak

NASA Astrophysics Data System (ADS)

Tanabe, H.; Yamada, T.; Watanabe, T.; Gi, K.; Inomoto, M.; Imazawa, R.; Gryaznevich, M.; Scannell, R.; Conway, N. J.; Michael, C.; Crowley, B.; Fitzgerald, I.; Meakins, A.; Hawkes, N.; McClements, K. G.; Harrison, J.; O'Gorman, T.; Cheng, C. Z.; Ono, Y.; The MAST Team

2017-05-01

We present results of recent studies of merging/reconnection heating during central solenoid (CS)-free plasma startup in the Mega Amp Spherical Tokamak (MAST). During this process, ions are heated globally in the downstream region of an outflow jet, and electrons locally around the X-point produced by the magnetic field of two internal P3 coils and of two plasma rings formed around these coils, the final temperature being proportional to the reconnecting field energy. There is an effective confinement of the downstream thermal energy, due to a thick layer of reconnected flux. The characteristic structure is sustained for longer than an ion-electron energy relaxation time, and the energy exchange between ions and electrons contributes to the bulk electron heating in the downstream region. The peak electron temperature around the X-point increases with toroidal field, but the downstream electron and ion temperatures do not change.

TaiWan Ionospheric Model (TWIM) prediction based on time series autoregressive analysis

NASA Astrophysics Data System (ADS)

Tsai, L. C.; Macalalad, Ernest P.; Liu, C. H.

2014-10-01

As described in a previous paper, a three-dimensional ionospheric electron density (Ne) model has been constructed from vertical Ne profiles retrieved from the FormoSat3/Constellation Observing System for Meteorology, Ionosphere, and Climate GPS radio occultation measurements and worldwide ionosonde foF2 and foE data and named the TaiWan Ionospheric Model (TWIM). The TWIM exhibits vertically fitted α-Chapman-type layers with distinct F2, F1, E, and D layers, and surface spherical harmonic approaches for the fitted layer parameters including peak density, peak density height, and scale height. To improve the TWIM into a real-time model, we have developed a time series autoregressive model to forecast short-term TWIM coefficients. The time series of TWIM coefficients are considered as realizations of stationary stochastic processes within a processing window of 30 days. These autocorrelation coefficients are used to derive the autoregressive parameters and then forecast the TWIM coefficients, based on the least squares method and Lagrange multiplier technique. The forecast root-mean-square relative TWIM coefficient errors are generally <30% for 1 day predictions. The forecast TWIM values of foE and foF2 values are also compared and evaluated using worldwide ionosonde data.

Structure of new Hg0.75V0.25Ba2CuO4+δ superconducting single crystals.Effect of overdoping on the magnetization second peak

NASA Astrophysics Data System (ADS)

Villard, G.; Pelloquin, D.; Maignan, A.

1998-10-01

Superconducting crystals (Tc=88 K) of the `1201' mercury cuprate have been grown by using vanadium as stabilizer of the (HgOδ) mercury layer. Its shortened c-axis parameter, c=9.345 Å, is linked to the substitution of small VO4 tetrahedra for HgO2 stick deduced from the structural study. The regular layer stacking is confirmed by high resolution microscopy, and cationic analysis coupled to an electron microscope leads to the average formula Hg0.75V0.25Ba2CuO4+δ for these overdoped crystals in good agreement with the structural refinements. One of the major result of the structural part is the mobility of oxygens located at the [BaO]∞ layer level. The superconducting properties of crystals with typical 800×500×10 μm3 dimensions have been investigated by magnetic measurements. Well-marked fishtail features are exhibited on their M(H) curves. The corresponding second peak line differs from that of optimized 1201 crystals demonstrating the important consequences on the superconducting properties of the vanadium for mercury substitution.

X-ray reflectivity of ruthenium nano-oxide layer in a CoFe-Ru-CoFe trilayer system

NASA Astrophysics Data System (ADS)

Asghari Zadeh, Saeid; Sutton, Mark; Altonian, Zaven; Mao, Ming; Lee, Chih-Ling

2006-03-01

A grazing incidence X-ray reflectivity technique is used to determine electron density profile(EDP) as a function of depth in CoFe-Ru-CoFe and CoFe-Ru nano oxide layer(NOL)-CoFe trilayers. Four trilayers with ruthenium thicknesses of 8,8.5 and 9 å.08cm and one with Ru8.5.05cmå.05cmNOL, prepared by a dc planetary sputtering system, were investigated. For all samples, EDP shows a central peak which is related to the Ru layer. Natural oxidation in all samples introduces a graded EDP of the top CoFe layer that decreases gradually to zero. The large surface resistivity of Ru8.5 å.05cm NOL compared to Ru 8.5å.08cm can be related to the remarkable difference between their EDP.

Plasmon dispersion and Coulomb drag in low-density electron bi-layers

NASA Astrophysics Data System (ADS)

Badalyan, S. M.; Kim, C. S.; Vignale, G.; Senatore, G.

2007-03-01

We investigate the effect of exchange and correlation (xc) on the plasmon spectrum and the Coulomb drag between spatially separated low-density two-dimensional electron layers. We adopt a new approach, which employs dynamic xc kernels in the calculation of the bi-layer plasmon spectra and of the plasmon-mediated drag, and static many-body local field factors in the calculation of the particle-hole contribution to the drag. We observe that both optical and acoustical plasmon modes are strongly affected by xc corrections and shift in opposite directions with decreasing density. This is in stark contrast with the tendency observed within the random phase approximation (RPA). We find that the introduction of xc corrections results in a significant enhancement of the transresistivity and qualitative changes in its temperature dependence. In particular, the large high-temperature plasmon peak that is present in the RPA is found to disappear when the xc corrections are included. Our numerical results are in good agreement with the results of recent experiments by M. Kellogg et al., Solid State Commun. 123, 515 (2002).

Photoinduced charge transfer from vacuum-deposited molecules to single-layer transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Osada, Kazuki; Tanaka, Masatoshi; Ohno, Shinya; Suzuki, Takanori

2016-06-01

Variations of photoluminescence (PL) and Raman spectra of single-layer MoS2, MoSe2, WS2, and WSe2 due to the vacuum deposition of C60 or copper phthalocyanine (CuPc) molecules have been investigated. PL spectra are decomposed into two competitive components, an exciton and a charged exciton (trion), depending on carrier density. The variation of PL spectra is interpreted in terms of charge transfer across the interfaces between transition metal dichalcogenides (TMDs) and dopant molecules. We find that deposited C60 molecules inject photoexcited electrons into MoS2, MoSe2, and WS2 or holes into WSe2. CuPc molecules also inject electrons into MoS2, MoSe2, and WS2, while holes are depleted from WSe2 to CuPc. We then propose a band alignment between TMDs and dopant molecules. Peak shifts of Raman spectra and doped carrier density estimated using a three-level model also support the band alignment. We thus demonstrate photoinduced charge transfer from dopant molecules to single-layer TMDs.

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

NASA Astrophysics Data System (ADS)

Bläsing, J.; Krost, A.; Hertkorn, J.; Scholz, F.; Kirste, L.; Chuvilin, A.; Kaiser, U.

2009-02-01

This paper presents an x-ray study of GaN, which is grown on nominally undoped and oxygen-doped AlN nucleation layers on sapphire substrates by metal organic vapor phase epitaxy. Without additional oxygen doping a trimodal nucleation distribution of AlN is observed leading to inhomogeneous in-plane strain fields, whereas in oxygen-doped layers a homogeneous distribution of nucleation centers is observed. In both types of nucleation layers extremely sharp correlation peaks occur in transverse ω-scans which are attributed to a high density of edge-type dislocations having an in-plane Burgers vector. The correlation peaks are still visible in the (0002) ω-scans of 500 nm GaN which might mislead an observer to conclude incorrectly that there exists an extremely high structural quality. For the undoped nucleation layers depth-sensitive measurements in grazing incidence geometry reveal a strong thickness dependence of the lattice parameter a, whereas no such dependence is observed for doped samples. For oxygen-doped nucleation layers, in cross-sectional transmission electron microscopy images a high density of stacking faults parallel to the substrate surface is found in contrast to undoped nucleation layers where a high density of threading dislocations is visible. GaN of 2.5 μm grown on top of 25 nm AlN nucleation layers with an additional in situ SiN mask show full widths at half maximum of 160″ and 190″ in (0002) and (10-10) high-resolution x-ray diffraction ω-scans, respectively.

Transport of ion beam in an annular magnetically expanding helicon double layer thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yunchao, E-mail: yunchao.zhang@anu.edu.au; Charles, Christine; Boswell, Rod

2014-06-15

An ion beam generated by an annular double layer has been measured in a helicon thruster, which sustains a magnetised low-pressure (5.0 × 10{sup −4} Torr) argon plasma at a constant radio-frequency (13.56 MHz) power of 300 W. After the ion beam exits the annular structure, it merges into a solid centrally peaked structure in the diffusion chamber. As the annular ion beam moves towards the inner region in the diffusion chamber, a reversed-cone plasma wake (with a half opening angle of about 30°) is formed. This process is verified by measuring both the radial and axial distributions of the beam potential and beammore » current. The beam potential changes from a two-peak radial profile (maximum value ∼ 30 V, minimum value ∼ 22.5 V) to a flat (∼28 V) along the axial direction; similarly, the beam current changes from a two-peak to one-peak radial profile and the maximum value decreases by half. The inward cross-magnetic-field motion of the beam ions is caused by a divergent electric field in the source. Cross-field diffusion of electrons is also observed in the inner plume and is determined as being of non-ambipolar origin.« less

Interpretation of Cyclic Voltammetry Measurements of Thin Semiconductor Films for Solar Fuel Applications.

PubMed

Bertoluzzi, Luca; Badia-Bou, Laura; Fabregat-Santiago, Francisco; Gimenez, Sixto; Bisquert, Juan

2013-04-18

A simple model is proposed that allows interpretation of the cyclic voltammetry diagrams obtained experimentally for photoactive semiconductors with surface states or catalysts used for fuel production from sunlight. When the system is limited by charge transfer from the traps/catalyst layer and by detrapping, it is shown that only one capacitive peak is observable and is not recoverable in the return voltage scan. If the system is limited only by charge transfer and not by detrapping, two symmetric capacitive peaks can be observed in the cathodic and anodic directions. The model appears as a useful tool for the swift analysis of the electronic processes that limit fuel production.

When is one layer complete? Using simultaneous in-situ RHEED and x-ray reflectivity to map layer-by-layer thin-film oxide growth

NASA Astrophysics Data System (ADS)

Sullivan, M. C.; Ward, M. J.; Joress, H.; Gutierrez-Llorente, A.; White, A. E.; Woll, A.; Brock, J. D.

2014-03-01

The most popular tool for characterizing in situ layer-by-layer growth is Reflection High-Energy Electron Diffraction (RHEED). X-ray reflectivity can also be used to study layer-by-layer growth, as long as the incident angle of the x-rays is far from a Bragg peak. During layer-by-layer homoepitaxial growth, both the RHEED intensity and the reflected x-ray intensity will oscillate, and each complete oscillation indicates the addition of one layer of material. However, it is well documented, but not well understood, that the maxima in the RHEED intensity oscillations do not necessarily occur at the completion of a layer. In contrast, the maxima in the x-ray intensity oscillations do occur at the completion of a layer, thus the RHEED and x-ray oscillations are rarely in phase. We present our results on simultaneous in situ x-ray reflectivity and RHEED during layer-by-layer growth of SrTiO3 and discuss how to determine the completion of a layer for RHEED oscillations independent of the phase of the RHEED oscillation. Supported by DOE Office of Basic Energy Sciences Award DE-SC0001086, CHESS is supported by the NSF & NIH/NIGMS via NSF award DMR-0936384.

Method for disclosing invisible physical properties in metal-ferroelectric-insulator-semiconductor gate stacks

NASA Astrophysics Data System (ADS)

Sakai, Shigeki; Zhang, Wei; Takahashi, Mitsue

2017-04-01

In metal-ferroelectric-insulator-semiconductor gate stacks of ferroelectric-gate field effect transistors (FeFETs), it is impossible to directly obtain curves of polarization versus electric field (P f-E f) in the ferroelectric layer. The P f-E f behavior is not simple, i.e. the P f-E f curves are hysteretic and nonlinear, and the hysteresis curve width depends on the electric field scan amplitude. Unless the P f-E f relation is known, the field E f strength cannot be solved when the voltage is applied between the gate meal and the semiconductor substrate, and thus P f-E f cannot be obtained after all. In this paper, the method for disclosing the relationships among the polarization peak-to-peak amplitude (2P mm_av), the electric field peak-to-peak amplitude (2E mm_av), and the memory window (E w) in units of the electric field is presented. To get P mm_av versus E mm_av, FeFETs with different ferroelectric-layer thicknesses should be prepared. Knowing such essential physical parameters is helpful and in many cases enough to quantitatively understand the behavior of FeFETs. The method is applied to three groups. The first one consists of SrBi2Ta2O9-based FeFETs. The second and third ones consist of Ca x Sr1-x Bi2Ta2O9-based FeFETs made by two kinds of annealing. The method can clearly differentiate the characters of the three groups. By applying the method, ferroelectric relationships among P mm_av, E mm_av, and E w are well classified in the three groups according to the difference of the material kinds and the annealing conditions. The method also evaluates equivalent oxide thickness (EOT) of a dual layer of a deposited high-k insulator and a thermally-grown SiO2-like interfacial layer (IL). The IL thickness calculated by the method is consistent with cross-sectional image of the FeFETs observed by a transmission electron microscope. The method successfully discloses individual characteristics of the ferroelectric and the insulator layers hidden in the gate stack of a FeFET.

Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batabyal, R.; Abdul Wasey, A. H. M.; Mahato, J. C.

We report on our observation of negative differential resistance (NDR) in electron tunneling conductance in atomic-scale ultrathin Ag films on Si(111) substrates. NDR was observed by scanning tunneling spectroscopy measurements. The tunneling conductance depends on the electronic local density of states (LDOS) of the sample. We show that the sample bias voltage, at which negative differential resistance and peak negative conductance occur, depends on the film thickness. This can be understood from the variation in the LDOS of the Ag films as a function of film thickness down to the two-dimensional limit of one atomic layer. First principles density functionalmore » theory calculations have been used to explain the results.« less

Ultrafast Graphene Light Emitters.

PubMed

Kim, Young Duck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Bae, Myung-Ho; Kim, Hyungsik; Seo, Dongjea; Choi, Heon-Jin; Kim, Suk Hyun; Nemilentsau, Andrei; Low, Tony; Tan, Cheng; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Shepard, Kenneth L; Heinz, Tony F; Englund, Dirk; Hone, James

2018-02-14

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.

Structural and optical properties of ZnO nanorods on Mg0.2Zn0.8O seed layers grown by hydrothermal method.

PubMed

Kim, Min Su; Kim, Do Yeob; Kim, Sung-O; Leem, Jae-Young

2013-05-01

ZnO nanorods were grown on the Mg0.2Zn0.8O seed layers with different thickness by hydrothermal method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out to investigate the effects of the Mg0.2Zn0.8O seed layer thickness on the structural and the optical properties of the ZnO nanorods. The residual stress in the Mg0.2Zn0.8O seed layers was depended on the thickness while the texture coefficient of the Mg0.2Zn0.8O seed layers was not affected significantly. The smaller full width at half maximum (FWHM) of the ZnO (002) diffraction and near-band-edge emission (NBE) peak and the larger average grain size were observed from the ZnO nanorods grown on the Mg0.2Zn0.8O seed layers with 5 layers (thickness of 350 nm), which indicate the enhancement the structural and the optical properties of the ZnO nanorods.

Simulation of Electron Scattering in Complex Nanostructures: Lithography, Metrology, and Characterization.

NASA Astrophysics Data System (ADS)

Johnson, Sylvester, IV

A CAE (Computer Aided Engineering) tool called SEEL (Simulation of Electron Energy Loss) is described in detail. SEEL simulates in any material the energy loss and trajectories of electrons in the complex, multilayered nanostructures typical of ULSI, at beam energies from 1 to 50 keV. Structures and materials are defined in the input file rather than in the source code of the program, for which flowcharts are included in addition to an explanation of the algorithms implemented. Satisfactory comparisons of simulated with experimental results are made of both secondary electron (SE) and backscattered electron (BSE) linescans across an array of MOS gate structures capped by rough oxide. Many other comparisons are made. The effects of varying line edge slopes on SE linescan peak shape are simulated and analyzed. A data library containing the simulated variation of the FWHM, peak height, and peak location with slope for different materials, line heights or trench depths, widths, beam energies, and nominal diameters could be used to find the edge location relative to the peak for improvement of the accuracy of linewidth measurement algorithms. An investigation indicates that the use of such a library would be complicated by the effect of surface roughness on the SE signal at the edge of a feature. SEEL can be used as the first module in a series of programs that simulate energy deposition in resist structures and correct the exposure of a circuit pattern. Pixel by pixel convolution for prediction of the proximity effect is time-consuming. Another method of proximity effect prediction based on the reciprocity of the RED is described. Such programs could be used to reduce the number of iterations in the lab required to optimize resist structures and exposure parameters. For both smooth and rough interfaces between a bottom layer of PMMA in a multilayer resist structure and a W film, the simulated exposure contrast declines from that with an oxide film beneath the structure. A comparison of Auger peak to background ratios resulting from simulation of smooth and rough surfaces indicates that roughening of an Al surface on a small scale could result in a smaller ratio.

Validation of COSMIC radio occultation electron density profiles by incoherent scatter radar data

NASA Astrophysics Data System (ADS)

Cherniak, Iurii; Zakharenkova, Irina

The COSMIC/FORMOSAT-3 is a joint US/Taiwan radio occultation mission consisting of six identical micro-satellites. Each microsatellite has a GPS Occultation Experiment payload to operate the ionospheric RO measurements. FS3/COSMIC data can make a positive impact on global ionosphere study providing essential information about height electron density distribu-tion. For correct using of the RO electron density profiles for geophysical analysis, modeling and other applications it is necessary to make validation of these data with electron density distributions obtained by another measurement techniques such as proven ground based facili-ties -ionosondes and IS radars. In fact as the ionosondes provide no direct information on the profile above the maximum electron density and the topside ionosonde profile is obtained by fitting a model to the peak electron density value, the COSMIC RO measurements can make an important contribution to the investigation of the topside part of the ionosphere. IS radars provide information about the whole electron density profile, so we can estimate the agreement of topside parts between two independent measurements. To validate the reliability of COS-MIC data we have used the ionospheric electron density profiles derived from IS radar located near Kharkiv, Ukraine (geographic coordinates: 49.6N, 36.3E, geomagnetic coordinates: 45.7N, 117.8E). The Kharkiv radar is a sole incoherent scatter facility on the middle latitudes of Eu-ropean region. The radar operates with 100-m zenith parabolic antenna at 158 MHz with peak transmitted power 2.0 MW. The Kharkiv IS radar is able to determine the heights-temporal distribution of ionosphere parameters in height range of 70-1500 km. At the ionosphere in-vestigation by incoherent scatter method there are directly measured the power spectrum (or autocorrelation function) of scattered signal. With using of rather complex procedure of the received signal processing it is possible to estimate the majority of the ionospheric parameters -density and kinetic temperature of electron and main ions, the plasma drift velocity and others. The comparison of RO reveals that usually COSMIC RO profiles are in a rather good agreement with ISR profiles both in the F2 layer peak electron density (NmF2) and the form of profiles. The coincidence of profiles is better in the cases when projection of the ray path of tangent points is closer to the ISR location. It is necessary to note that retrieved electron density profiles should not be interpreted as actual vertical profiles. The geographical location of the ray path tangent points at the top and at the bottom of a profile may differ by several hundred kilometers. So the spatial smearing of data takes place and RO technique represents an image of vertical and horizontal ionospheric structure. That is why the comparison with ground-based data has rather relative character. We derived quantitative parameters to char-acterize the differences of the compared profiles: the peak height difference, the relative peak density difference. Most of the compared profiles agree within error limits, depending on the accuracy of the occultation-and the radar-derived profiles. In general COSMIC RO profiles are in a good agreement with incoherent radar profiles both in the F2 layer peak electron density (NmF2) and the form of the profiles. The coincidence of COSMIC and incoherent radar pro-files is better in the cases when projection of the ray path tangent points is closer to the radar location. COSMIC measurements can be efficiently used to study the topside part of the iono-spheric electron density. To validate the reliability of the COSMIC ionospheric observations it must be done the big work on the analysis and statistical generalization of the huge data array (today the total number of ionospheric occultation is more than 2.300.000), but this technique is a very promising one to retrieve accurate profiles of the ionospheric electron density with ground-based measurements on a global scale. We acknowledge the Taiwan's National Space Organization (NSPO) and the University Corporation for Atmospheric Research (UCAR) for providing the COSMIC Data.

Analysis of epitaxial drift field N on P silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.; Brandhorst, H. W., Jr.

1976-01-01

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Electron-Excited X-Ray Microanalysis at Low Beam Energy: Almost Always an Adventure!

PubMed

Newbury, Dale E; Ritchie, Nicholas W M

2016-08-01

Scanning electron microscopy with energy-dispersive spectrometry has been applied to the analysis of various materials at low-incident beam energies, E 0≤5 keV, using peak fitting and following the measured standards/matrix corrections protocol embedded in the National Institute of Standards and Technology Desktop Spectrum Analyzer-II analytical software engine. Low beam energy analysis provides improved spatial resolution laterally and in-depth. The lower beam energy restricts the atomic shells that can be ionized, reducing the number of X-ray peak families available to the analyst. At E 0=5 keV, all elements of the periodic table except H and He can be measured. As the beam energy is reduced below 5 keV, elements become inaccessible due to lack of excitation of useful characteristic X-ray peaks. The shallow sampling depth of low beam energy microanalysis makes the technique more sensitive to surface compositional modification due to formation of oxides and other reaction layers. Accurate and precise analysis is possible with the use of appropriate standards and by accumulating high count spectra of unknowns and standards (>1 million counts integrated from 0.1 keV to E 0).

In situ fabrication of green reduced graphene-based biocompatible anode for efficient energy recycle.

PubMed

Cheng, Ying; Mallavarapu, Megharaj; Naidu, Ravi; Chen, Zuliang

2018-02-01

Improving the anode configuration to enhance biocompatibility and accelerate electron shuttling is critical for efficient energy recovery in microbial fuel cells (MFCs). In this paper, green reduced graphene nanocomposite was successfully coated using layer-by-layer assembly technique onto carbon brush anode. The modified anode achieved a 3.2-fold higher power density of 33.7 W m -3 at a current density of 69.4 A m -3 with a 75% shorter start period. As revealed in the characterization, the green synthesized nanocomposite film affords larger surface roughness for microbial colonization. Besides, gold nanoparticles, which anchored on graphene sheets, promise the relatively high electroactive sites and facilitate electron transfer from electricigens to the anode. The reduction-oxidation peaks in cyclic voltammograms indicated the mechanism of surface cytochromes facilitated current generation while the electrochemical impedance spectroscopy confirmed the enhanced electron transfer from surface cytochrome to electrode. The green synthesis process has the potential to generate a high performing anode in further applications of MFCs. Copyright © 2017 Elsevier Ltd. All rights reserved.

Layer dependence of the superconducting transition temperature of HgBa2Can-1 CunO2 n+2+ δ

NASA Astrophysics Data System (ADS)

Scott, B. A.; Suard, E. Y.; Tsuei, C. C.; Mitzi, D. B.; McGuire, T. R.; Chen, B.-H.; Walker, D.

1994-09-01

High-pressure methods have been used to synthesize multiphase compositions in the Hg12{ n-1} n homologous series. The phase assemblages were examined by optical, electron diffraction and X-ray diffraction techniques, and their stoichiometries verified by electron microprobe. Transport and magnetic susceptibility measurements were combined with the results of the phase analysis to establish superconducting transition temperatures for both as-prepared and O 2- or Ar-annealed materials. It was found that the transition temperature peaks at Tc = 134 K for n = 3 and then decreases abruptly for n>4, reaching Tc<90 K for n⪖7.

Fabrication of frequency selective surface for band stop IR-filter

NASA Astrophysics Data System (ADS)

Mishra, Akshita; Sudheer, Tiwari, P.; Mondal, P.; Bhatt, H.; Rai, V. N.; Srivastava, A. K.

2016-05-01

Fabrication and characterization of frequency selective surfaces (FSS) on silicon dioxide/ silicon is reported. Electron beam lithography based techniques are used for the fabrication of periodic slot structure in tungsten layer on silicon dioxide/silicon. The fabrication process consists of growth of SiO2 on silicon, tungsten deposition, electron beam lithography, and wet etching of tungsten. The optical characterization of the structural pattern was carried out using fourier transform infrared spectroscopy (FTIR). The reflectance spectra clearly show a resonance peak at 9.09 µm in the mid infrared region. This indicates that the patterned surface acts as band stop filter in the mid-infrared region.

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Cherkova, S. G.; Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Kamaev, G. N.; Skuratov, V. A.

2017-08-01

Light-emitting nanoclusters were formed in Si/SiO2 multilayer structures irradiated with 167 MeV Xe ions to the doses of 1011-3  ×  1014 cm-2 and annealed in the forming-gas at 500 °C and in nitrogen at 800-1100 °C, 30 min. The thicknesses were ~4 nm or ~7-8 for the Si, and ~10 nm for the SiO2 layers. The structures were studied using photoluminescence (PL), Raman spectroscopy, and the cross-sectional high resolution transmission electron microscopy (HRTEM). As-irradiated samples showed the PL, correlating with the growth of the ion doses. HRTEM found the layers to be partly disintegrated. The thickness of the amorphous Si layer was crucial. For 4 nm thick Si layers the PL was peaking at ~490 nm, and quenched by the annealing. It was ascribed to the structural imperfections. For the thicker Si layers the PL was peaking at ~600 nm and was attributed to the Si-rich nanoclusters in silicon oxide. The annealing increases the PL intensity and shifts the band to ~790 nm, typical of Si nanocrystals. Its intensity was proportional to the dose. Raman spectra confirmed the nanocrystals formation. All the results obtained evidence the material melting in the tracks for 10-11-10-10 s providing thereby fast diffusivities of the atoms. The thicker Si layers provide more excess Si to create the nanoclusters via a molten state diffusion.

Wave processes in dusty plasma near the Moon’s surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozova, T. I.; Kopnin, S. I.; Popel, S. I., E-mail: popel@iki.rssi.ru

2015-10-15

A plasma—dust system in the near-surface layer on the illuminated side of the Moon is described. The system involves photoelectrons, solar-wind electrons and ions, neutrals, and charged dust grains. Linear and nonlinear waves in the plasma near the Moon’s surface are discussed. It is noticed that the velocity distribution of photoelectrons can be represented as a superposition of two distribution functions characterized by different electron temperatures: lower energy electrons are knocked out of lunar regolith by photons with energies close to the work function of regolith, whereas higher energy electrons are knocked out by photons corresponding to the peak atmore » 10.2 eV in the solar radiation spectrum. The anisotropy of the electron velocity distribution function is distorted due to the solar wind motion with respect to photoelectrons and dust grains, which leads to the development of instability and excitation of high-frequency oscillations with frequencies in the range of Langmuir and electromagnetic waves. In addition, dust acoustic waves can be excited, e.g., near the lunar terminator. Solutions in the form of dust acoustic solitons corresponding to the parameters of the dust—plasma system in the near-surface layer of the illuminated Moon’s surface are found. Ranges of possible Mach numbers and soliton amplitudes are determined.« less

Simulation of irradiation exposure of electronic devices due to heavy ion therapy with Monte Carlo Code MCNP6

NASA Astrophysics Data System (ADS)

Lapins, Janis; Guilliard, Nicole; Bernnat, Wolfgang; Buck, Arnulf

2017-09-01

During heavy ion irradiation therapy the patient has to be located exactly at the right position to make sure that the Bragg peak occurs in the tumour. The patient has to be moved in the range of millimetres to scan the ill tissue. For that reason a special table was developed which allows exact positioning. The electronic control can be located outside the surgery. But that has some disadvantage for the construction. To keep the system compact it would be much more comfortable to put the electronic control inside the surgery. As a lot of high energetic secondary particles are produced during the therapy causing a high dose in the room it is important to find positions with low dose rates. Therefore, investigations are needed where the electronic devices should be located to obtain a minimum of radiation, help to prevent the failure of sensitive devices. The dose rate was calculated for carbon ions with different initial energy and protons over the entire therapy room with Monte Carlo particle tracking using MCNP6. The types of secondary particles were identified and the dose rate for a thin silicon layer and an electronic mixture material was determined. In addition, the shielding effect of several selected material layers was calculated using MCNP6.

Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

NASA Astrophysics Data System (ADS)

Lee, Juhyun; Lee, Jeongsu; Ham, Giyul; Shin, Seokyoon; Park, Joohyun; Choi, Hyeongsu; Lee, Seungjin; Kim, Juyoung; Sul, Onejae; Lee, Seungbeck; Jeon, Hyeongtag

2017-02-01

We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel material for field-effect transistors (FETs) because of its high mobility, good on/off ratio and low temperature processability. In order to apply these 2D materials to large-scale and flexible electronics, it is essential to develop processes that are compatible with current electronic device manufacturing technology which should be conducted at low temperatures. Here, we deposited a crystalline SnS2 at 150 °C using ALD, and we then annealed at 300 °C. X-ray diffraction (XRD) and Raman spectroscopy measurements before and after the annealing showed that SnS2 had a hexagonal (001) peak at 14.9° and A1g mode at 313 cm-1. The annealed SnS2 exhibited clearly a layered structure confirmed by the high resolution transmission electron microscope (HRTEM) images. Back-gate FETs with SnS2 channel sandwiched by top and bottom ZrO2 on p++Si/SiO2 substrate were suggested to improve electrical characteristics. We used a bottom ZrO2 layer to increase adhesion between the channel and the substrate and a top ZrO2 layer to improve contact property, passivate surface, and protect from process-induced damages to the channel. ZTZ (ZrO2/SnS2/ZrO2) FETs showed improved electrical characteristics with an on/off ratio of from 0.39×103 to 6.39×103 and a mobility of from 0.0076 cm2/Vs to 0.06 cm2/Vs.

Formation Mechanisms of the Spring-Autumn Asymmetry of the Midlatitudinal NmF2 under Daytime Quiet Geomagnetic Conditions at Low Solar Activity

NASA Astrophysics Data System (ADS)

Pavlov, A. V.; Pavlova, N. M.

2018-05-01

Formation mechanism of the spring-autumn asymmetry of the F2-layer peak electron number density of the midlatitudinal ionosphere, NmF2, under daytime quiet geomagnetic conditions at low solar activity are studied. We used the ionospheric parameters measured by the ionosonde and incoherent scatter radar at Millstone Hill on March 3, 2007, March 29, 2007, September 12, 2007, and September 18, 1984. The altitudinal profiles of the electron density and temperature were calculated for the studied conditions using a one-dimensional, nonstationary, ionosphere-plasmasphere theoretical model for middle geomagnetic latitudes. The study has shown that there are two main factors contributing to the formation of the observed spring-autumn asymmetry of NmF2: first, the spring-autumn variations of the plasma drift along the geomagnetic field due to the corresponding variations in the components of the neutral wind velocity, and, second, the difference between the composition of the neutral atmosphere under the spring and autumn conditions at the same values of the universal time and the ionospheric F2-layer peak altitude. The seasonal variations of the rate of O+(4S) ion production, which are associated with chemical reactions with the participation of the electronically excited ions of atomic oxygen, does not significantly affect the studied NmF2 asymmetry. The difference in the degree of influence of O+(4S) ion reactions with vibrationally excited N2 and O2 on NmF2 under spring and autumn conditions does not significantly change the spring-autumn asymmetry of NmF2.

Work Function Variations in Twisted Graphene Layers

DOE PAGES

Robinson, Jeremy T.; Culbertson, James; Berg, Morgann; ...

2018-01-31

By combining optical imaging, Raman spectroscopy, kelvin probe force microscopy (KFPM), and photoemission electron microscopy (PEEM), we show that graphene’s layer orientation, as well as layer thickness, measurably changes the surface potential (Φ). Detailed mapping of variable-thickness, rotationally-faulted graphene films allows us to correlate Φ with specific morphological features. Using KPFM and PEEM we measure ΔΦ up to 39 mV for layers with different twist angles, while ΔΦ ranges from 36–129 mV for different layer thicknesses. The surface potential between different twist angles or layer thicknesses is measured at the KPFM instrument resolution of ≤ 200 nm. The PEEM measuredmore » work function of 4.4 eV for graphene is consistent with doping levels on the order of 10 12cm -2. Here, we find that Φ scales linearly with Raman G-peak wavenumber shift (slope = 22.2 mV/cm -1) for all layers and twist angles, which is consistent with doping-dependent changes to graphene’s Fermi energy in the ‘high’ doping limit. Our results here emphasize that layer orientation is equally important as layer thickness when designing multilayer two-dimensional systems where surface potential is considered.« less

Work Function Variations in Twisted Graphene Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robinson, Jeremy T.; Culbertson, James; Berg, Morgann

By combining optical imaging, Raman spectroscopy, kelvin probe force microscopy (KFPM), and photoemission electron microscopy (PEEM), we show that graphene’s layer orientation, as well as layer thickness, measurably changes the surface potential (Φ). Detailed mapping of variable-thickness, rotationally-faulted graphene films allows us to correlate Φ with specific morphological features. Using KPFM and PEEM we measure ΔΦ up to 39 mV for layers with different twist angles, while ΔΦ ranges from 36–129 mV for different layer thicknesses. The surface potential between different twist angles or layer thicknesses is measured at the KPFM instrument resolution of ≤ 200 nm. The PEEM measuredmore » work function of 4.4 eV for graphene is consistent with doping levels on the order of 10 12cm -2. Here, we find that Φ scales linearly with Raman G-peak wavenumber shift (slope = 22.2 mV/cm -1) for all layers and twist angles, which is consistent with doping-dependent changes to graphene’s Fermi energy in the ‘high’ doping limit. Our results here emphasize that layer orientation is equally important as layer thickness when designing multilayer two-dimensional systems where surface potential is considered.« less

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

NASA Astrophysics Data System (ADS)

Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

2017-05-01

In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

MAVEN observations of dayside peak electron densities in the ionosphere of Mars

NASA Astrophysics Data System (ADS)

Vogt, Marissa F.; Withers, Paul; Fallows, Kathryn; Andersson, Laila; Girazian, Zachary; Mahaffy, Paul R.; Benna, Mehdi; Elrod, Meredith K.; Connerney, John E. P.; Espley, Jared R.; Eparvier, Frank G.; Jakosky, Bruce M.

2017-01-01

The peak electron density in the dayside Martian ionosphere is a valuable diagnostic of the state of the ionosphere. Its dependence on factors like the solar zenith angle, ionizing solar irradiance, neutral scale height, and electron temperature has been well studied. The Mars Atmosphere and Volatile EvolutioN spacecraft's September 2015 "deep dip" orbits, in which the orbital periapsis was lowered to 125 km, provided the first opportunity since Viking to sample in situ a complete dayside electron density profile including the main peak. Here we present peak electron density measurements from 37 deep dip orbits and describe conditions at the altitude of the main peak, including the electron temperature and composition of the ionosphere and neutral atmosphere. We find that the dependence of the peak electron density and the altitude of the main peak on solar zenith angle are well described by analytical photochemical theory. Additionally, we find that the electron temperatures at the main peak display a dependence on solar zenith angle that is consistent with the observed variability in the peak electron density. Several peak density measurements were made in regions of large crustal magnetic field, but there is no clear evidence that the crustal magnetic field strength influences the peak electron density, peak altitude, or electron temperature. Finally, we find that the fractional abundance of O2+ and CO2+ at the peak altitude is variable but that the two species together consistently represent 95% of the total ion density.

Doping, Strain, Orientation and Disorder of Graphene by Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Ferrari, Andrea C.

2009-03-01

Raman spectroscopy is a fast and non-destructive method for the characterization of carbons [1]. These show two features: the G and D peaks, around 1580 and 1350cm-1 respectively. The G peak corresponds to the doubly degenerate E2g phonon at the Brillouin zone centre. The D peak is due to the breathing modes of sp^2 atoms and requires a defect for its activation [1-5]. It is common for as-prepared graphene not to have enough structural defects for the D peak to be seen [4,6], so that it can only be detected at the edges [6]. The most prominent feature in graphene is the second order 2D peak [6]. This is always seen, since no defects are required for its activation. Its shape distinguishes single and multi-layers [6]. Raman spectroscopy also monitors doping [7-9]. We report the evolution of the Raman spectra of single [7,8] and bi-layer [9] graphene as a function of doping. A Fermi level shift is induced either by applying a bottom gate [7], or by a polymeric top gate [8,9], or naturally happens as a result of charged impurities [10]. This induces a stiffening of the Raman G peak for both hole and electron doping [7]. This is explained including dynamic corrections to the adiabatic Born-Oppenheimer approximation [7]. The phonon renormalization of bilayer graphene has characteristic features compared to single layer. This allows a direct estimation of the interlayer coupling [7-9]. We then consider the effects strain. Uniaxial strain lifts the E2g degeneracy and splits the G peak in two: G^+ and G^-. The peaks downshift as a function of strain allows a direct measurement of the Gruneisen parameter [10]. The polarization dependence of the G^+/G^- modes is a probe of the crystallographic orientation of the sample [10]. Finally, we consider the effect of disorder [3,4,11] and show how to discriminate between disorder, strain and doping [11]. We will also discuss how the D peak is a signature of π electron localisation, and, thus, of gap opening in chemically modified graphene[12]. [4pt] 1. A. C. Ferrari, J. Robertson (eds), Raman spectroscopy in carbons: from nanotubes to diamond, Theme Issue, Phil. Trans. Roy. Soc. 362, 2267 (2004). 2. F. Tuinstra, J.L. Koening, J. Chem. Phys. 53, 1126(1970). 3. A. C. Ferrari, J. Robertson Phys Rev B 61, 14095 (2000); 64, 075414 (2001) 4. A. C. Ferrari Solid State Comm.143, 47 (2007) 5. S. Piscanec et al. Phys. Rev. Lett. 93, 185503 (2004) 6. A. C. Ferrari et al. Phys. Rev. Lett. 97, 187401 (2006) 7. S. Pisana et al. Nature Mater. 6, 198 (2007) 8. A. Das et al, Nature Nano 3, 210 (2008). 9. A. Das et al., arXiv:0807.1631v1 (2008) 10. A. C. Ferrari et al. submitted (2008) 11. C. Casiraghi et al. Appl. Phys Lett. 91, 233108 (2007) 12. Elias et al. arXiv:0810.4706 (2008)

Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

NASA Astrophysics Data System (ADS)

Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

2004-07-01

In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

Unravelling Some of the Structure-Property Relationships in Graphene Oxide at Low Degree of Oxidation.

PubMed

Savazzi, Filippo; Risplendi, Francesca; Mallia, Giuseppe; Harrison, Nicholas M; Cicero, Giancarlo

2018-04-05

Graphene oxide (GO) is a versatile 2D material whose properties can be tuned by changing the type and concentration of oxygen-containing functional groups attached to its surface. However, a detailed knowledge of the dependence of the chemo/physical features of this material on its chemical composition is largely unknown. We combine classical molecular dynamics and density functional theory simulations to predict the structural and electronic properties of GO at low degree of oxidation and suggest a revision of the Lerf-Klinowski model. We find that layer deformation is larger for samples containing high concentrations of epoxy groups and that correspondingly the band gap increases. Targeted chemical modification of the GO surface appears to be an effective route to tailor the electronic properties of the monolayer for given applications. Our simulations also show that the chemical shift of the C-1s XPS peak allows one to unambiguously characterize GO composition, resolving the peak attribution  uncertainty often encountered in experiments.

Surface characterization of low-temperature grown yttrium oxide

NASA Astrophysics Data System (ADS)

Krawczyk, Mirosław; Lisowski, Wojciech; Pisarek, Marcin; Nikiforow, Kostiantyn; Jablonski, Aleksander

2018-04-01

The step-by-step growth of yttrium oxide layer was controlled in situ using X-ray photoelectron spectroscopy (XPS). The O/Y atomic concentration (AC) ratio in the surface layer of finally oxidized Y substrate was found to be equal to 1.48. The as-grown yttrium oxide layers were then analyzed ex situ using combination of Auger electron spectroscopy (AES), elastic-peak electron spectroscopy (EPES) and scanning electron microscopy (SEM) in order to characterize their surface chemical composition, electron transport phenomena and surface morphology. Prior to EPES measurements, the Y oxide surface was pre-sputtered by 3 kV argon ions, and the resulting AES-derived composition was found to be Y0.383O0.465C0.152 (O/Y AC ratio of 1.21). The SEM images revealed different surface morphology of sample before and after Ar sputtering. The oxide precipitates were observed on the top of un-sputtered Y oxide layer, whereas the oxide growth at the Ar ion-sputtered surface proceeded along defects lines normal to the layer plane. The inelastic mean free path (IMFP) characterizing electron transport was evaluated as a function of energy in the range of 0.5-2 keV from the EPES method. Two reference materials (Ni and Au) were used in these measurements. Experimental IMFPs determined for the Y0.383O0.465C0.152 and Y2O3 surface compositions, λ, were uncorrected for surface excitations and approximated by the simple function λ = kEp at electron energies E between 500 eV and 2000 eV, where k and p were fitted parameters. These values were also compared with IMFPs resulting from the TPP-2 M predictive equation for both oxide compositions. The fitted functions were found to be reasonably consistent with the measured and predicted IMFPs. In both cases, the average value of the mean percentage deviation from the fits varied between 5% and 37%. The IMFPs measured for Y0.383O0.465C0.152 surface composition were found to be similar to the IMFPs for Y2O3.

Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide-Polymer Blend Charge Transport.

PubMed

Huang, Wei; Guo, Peijun; Zeng, Li; Li, Ran; Wang, Binghao; Wang, Gang; Zhang, Xinan; Chang, Robert P H; Yu, Junsheng; Bedzyk, Michael J; Marks, Tobin J; Facchetti, Antonio

2018-04-25

Charge transport and film microstructure evolution are investigated in a series of polyethylenimine (PEI)-doped (0.0-6.0 wt%) amorphous metal oxide (MO) semiconductor thin film blends. Here, PEI doping generality is broadened from binary In 2 O 3 to ternary (e.g., In+Zn in IZO, In+Ga in IGO) and quaternary (e.g., In+Zn+Ga in IGZO) systems, demonstrating the universality of this approach for polymer electron doping of MO matrices. Systematic comparison of the effects of various metal ions on the electronic transport and film microstructure of these blends are investigated by combined thin-film transistor (TFT) response, AFM, XPS, XRD, X-ray reflectivity, and cross-sectional TEM. Morphological analysis reveals that layered MO film microstructures predominate in PEI-In 2 O 3 , but become less distinct in IGO and are not detectable in IZO and IGZO. TFT charge transport measurements indicate a general coincidence of a peak in carrier mobility (μ peak ) and overall TFT performance at optimal PEI doping concentrations. Optimal PEI loadings that yield μ peak values depend not only on the MO elemental composition but also, equally important, on the metal atomic ratios. By investigating the relationship between the MO energy levels and PEI doping by UPS, it is concluded that the efficiency of PEI electron-donation is highly dependent on the metal oxide matrix work function in cases where film morphology is optimal, as in the IGO compositions. The results of this investigation demonstrate the broad generality and efficacy of PEI electron doping applied to electronically functional metal oxide systems and that the resulting film microstructure, morphology, and energy level modifications are all vital to understanding charge transport in these amorphous oxide blends.

Extremely Low Ionospheric Peak Altitudes in the Polar-Hole Region

NASA Technical Reports Server (NTRS)

Benson, Robert F.; Grebowsky, Joseph M.

1999-01-01

Vertical electron-density (N (sub e)) profiles, deduced from newly-available ISIS-II digital ionospheric topside-sounder data, are used to investigate the "polar-hole" region within the winter, nighttime polar cap ionosphere during solar minimum. The hole region is located around 0200 MLT near the poleward side of the auroral oval. Earlier investigations had revealed very low N (sub e) values in this region (down to 200/cu cm near 300 km). In the present study, such low N, values (approx. 100/cu cm) were only found near the ISIS (International Satellite for Ionospheric Study)-II altitude of 1400 km. The peak ionospheric concentration below the spacecraft remained fairly constant (approx. 10 (exp 5)/cu cm across the hole region but the altitude of the peak dropped dramatically. This peak dropped, surprisingly, to the vicinity of 100 km. These observations suggest that the earlier satellite in situ measurements, interpreted as deep holes in the ionospheric F-region concentration, could have been made during conditions of an extreme decrease in the altitude of the ionospheric N (sub e) peak. The observations, in combination with other data, indicate that the absence of an F-layer peak may be a frequent occurrence at high latitudes.

On the possible source of the ionization in the nighttime Martian ionosphere. I - Phobos 2 HARP electron spectrometer measurements

NASA Technical Reports Server (NTRS)

Verigin, M. I.; Gringauz, K. I.; Shutte, N. M.; Haider, S. A.; Szego, K.; Kiraly, P.; Nagy, A. F.; Gombosi, T. I.

1991-01-01

The measurements of electron spectra in the Martian magnetosphere by the HARP instrument on board the Phobos 2 orbiter are presented. The energy of the electrons (a few tens of electron volts) is sufficient for the impact ionization of the planetary neutral gas, and the characteristic flux of electrons (about 10 exp 8/sq cm per sec) could produce the nightside ionospheric layer with a peak density of a few thousands of electrons per cubic centimeter, which corresponds to densities observed earlier during radio occultations of the Mars 4 and 5 and Viking 1 and 2 spacecraft. The possibility of magnetospheric electron precipitation into the nightside atmosphere of Mars is in agreement with the mainly induced nature of the magnetic field in the planetary magnetotail (as at Venus), while the variability of the Martian nightside ionosphere may be explained by the partial screening of the atmosphere by a weak intrinsic magnetic field of the planet.

Seasonal and Solar Activity Variations of f3 Layer and StF-4 F-Layer Quadruple Stratification) Near the Equatorial Region

NASA Astrophysics Data System (ADS)

Tardelli, A.; Fagundes, P. R.; Pezzopane, M.; Kavutarapu, V.

2016-12-01

The ionospheric F-layer shape and electron density peak variations depend on local time, latitude, longitude, season, solar cycle, geomagnetic activity, and electrodynamic conditions. In particular, the equatorial and low latitude F-layer may change its shape and peak height in a few minutes due to electric fields induced by propagation of medium-scale traveling ionospheric disturbances (MSTIDs) or thermospheric - ionospheric coupling. This F-layer electrodynamics feature characterizing the low latitudes is one of the most remarkable ionospheric physics research field. The study of multiple-stratification of the F-layer has the initial records in the mid of the 20th century. Since then, many studies were focused on F3 layer. The diurnal, seasonal and solar activity variations of the F3 layer characteristics have been investigated by several researchers. Recently, investigations on multiple-stratifications of F-layer received an important boost after the quadruple stratification (StF-4) was observed at Palmas (10.3°S, 48.3°W; dip latitude 5.5°S - near equatorial region), Brazil (Tardelli & Fagundes, JGR, 2015). This study present the latest findings related with the seasonal and solar activity characteristics of the F3 layer and StF-4 near the equatorial region during the period from 2002 to 2006. A significant connection between StF-4 and F3 layer has been noticed, since the StF-4 is always preceded and followed by an F3 layer appearance. However, the F3 layer and StF-4 present different seasonal and solar cycle variations. At a near equatorial station Palmas, the F3 layer shows the maximum and minimum occurrence during summer and winter seasons respectively. On the contrary, the StF-4 presents the maximum and minimum occurrence during winter and summer seasons respectively. While the F3 layer occurrence is not affected by solar cycle, the StF-4 appearance is instead more frequent during High Solar Activity (HSA).

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Vibrational and optical properties of MoS2: From monolayer to bulk

NASA Astrophysics Data System (ADS)

Molina-Sánchez, Alejandro; Hummer, Kerstin; Wirtz, Ludger

2015-12-01

Molybdenum disulfide, MoS2, has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the fabrication of single and multi-layers and opens the possibility to generate atomically thin crystals with outstanding properties. In contrast to graphene, it has an optical gap of ~1.9 eV. This makes it a prominent candidate for transistor and opto-electronic applications. Single-layer MoS2 exhibits remarkably different physical properties compared to bulk MoS2 due to the absence of interlayer hybridization. For instance, while the band gap of bulk and multi-layer MoS2 is indirect, it becomes direct with decreasing number of layers. In this review, we analyze from a theoretical point of view the electronic, optical, and vibrational properties of single-layer, few-layer and bulk MoS2. In particular, we focus on the effects of spin-orbit interaction, number of layers, and applied tensile strain on the vibrational and optical properties. We examine the results obtained by different methodologies, mainly ab initio approaches. We also discuss which approximations are suitable for MoS2 and layered materials. The effect of external strain on the band gap of single-layer MoS2 and the crossover from indirect to direct band gap is investigated. We analyze the excitonic effects on the absorption spectra. The main features, such as the double peak at the absorption threshold and the high-energy exciton are presented. Furthermore, we report on the the phonon dispersion relations of single-layer, few-layer and bulk MoS2. Based on the latter, we explain the behavior of the Raman-active A1g and E2g1 modes as a function of the number of layers. Finally, we compare theoretical and experimental results of Raman, photoluminescence, and optical-absorption spectroscopy.

The Effects of Surface Reconstruction and Electron-Positron Correlation on the Annihilation Characteristics of Positrons Trapped at Semiconductor Surfaces

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Jung, E.; Weiss, A. H.

2009-03-01

Experimental positron annihilation induced Auger electron spectroscopy (PAES) data from Ge(100) and Ge(111) surfaces display several strong Auger peaks corresponding to M4,5N1N2,3, M2,3M4,5M4,5, M2,3M4,5V, and M1M4,5M4,5 Auger transitions. The integrated peak intensities of Auger transitions have been used to obtain experimental annihilation probabilities for the Ge 3d and 3p core electrons. The experimental data were analyzed by performing theoretical studies of the effects of surface reconstructions and electron-positron correlations on image potential induced surface states and annihilation characteristics of positrons trapped at the reconstructed Ge(100) and Ge(111) surfaces. Calculations of positron surface states and annihilation characteristics have been performed for Ge(100) surface with (2×1), (2×2), and (4×2) reconstructions, and for Ge(111) surface with c(2×8) reconstruction. Estimates of the positron binding energy and annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of the semiconductor and to the approximations used to describe electron-positron correlations. The results of these theoretical studies are compared with the ones obtained for the reconstructed Si(100)-(2×1) and Si(111)-(7×7) surfaces.

Anomalous Electron Spectrum and Its Relation to Peak Structure of Electron Scattering Rate in Cuprate Superconductors

NASA Astrophysics Data System (ADS)

Gao, Deheng; Mou, Yingping; Feng, Shiping

2018-02-01

The recent discovery of a direct link between the sharp peak in the electron quasiparticle scattering rate of cuprate superconductors and the well-known peak-dip-hump structure in the electron quasiparticle excitation spectrum is calling for an explanation. Within the framework of the kinetic-energy-driven superconducting mechanism, the complicated line-shape in the electron quasiparticle excitation spectrum of cuprate superconductors is investigated. It is shown that the interaction between electrons by the exchange of spin excitations generates a notable peak structure in the electron quasiparticle scattering rate around the antinodal and nodal regions. However, this peak structure disappears at the hot spots, which leads to that the striking peak-dip-hump structure is developed around the antinodal and nodal regions, and vanishes at the hot spots. The theory also confirms that the sharp peak observed in the electron quasiparticle scattering rate is directly responsible for the remarkable peak-dip-hump structure in the electron quasiparticle excitation spectrum of cuprate superconductors.

Relationship between vertical ExB drift and F2-layer characteristics in the equatorial ionosphere at solar minimum conditions

NASA Astrophysics Data System (ADS)

Oyekola, Oyedemi S.

2012-07-01

Equatorial and low-latitude electrodynamics plays a dominant role in determining the structure and dynamics of the equatorial and low-latitude ionospheric F-region. Thus, they constitute essential input parameters for quantitative global and regional modeling studies. In this work, hourly median value of ionosonde measurements namely, peak height F2-layer (hmF2), F2-layer critical frequency (foF2) and propagation factor M(3000)F2 made at near equatorial dip latitude, Ouagadougou, Burkina Faso (12oN, 1.5oW; dip: 1.5oN) and relevant F2-layer parameters such as thickness parameter (Bo), electron temperature (Te), ion temperature (Ti), total electron content (TEC) and electron density (Ne, at the fixed altitude of 300 km) provided by the International Reference Ionosphere (IRI) model for the longitude of Ouagadougou are contrasted with the IRI vertical drift model to explore in detail the monthly climatological behavior of equatorial ionosphere and the effects of equatorial vertical plasma drift velocities on the diurnal structure of F2-layer parameters. The analysis period covers four months representative of solstitial and equinoctial seasonal periods during solar minimum year of 1987 for geomagnetically quiet-day. We show that month-by-month morphological patterns between vertical E×B drifts and F2-layer parameters range from worst to reasonably good and are largely seasonally dependent. A cross-correlation analysis conducted between equatorial drift and F2-layer characteristics yield statistically significant correlations for equatorial vertical drift and IRI-Bo, IRI-Te and IRI-TEC, whereas little or no acceptable correlation is obtained with observational evidence. Assessment of the association between measured foF2, hmF2 and M(3000)F2 illustrates consistent much more smaller correlation coefficients with no systematic linkage. In general, our research indicates strong departure from simple electrodynamically controlled behavior.

Overview of the FTU results

NASA Astrophysics Data System (ADS)

Pucella, G.; Alessi, E.; Amicucci, L.; Angelini, B.; Apicella, M. L.; Apruzzese, G.; Artaserse, G.; Belli, F.; Bin, W.; Boncagni, L.; Botrugno, A.; Briguglio, S.; Bruschi, A.; Buratti, P.; Calabrò, G.; Cappelli, M.; Cardinali, A.; Castaldo, C.; Causa, F.; Ceccuzzi, S.; Centioli, C.; Cesario, R.; Cianfarani, C.; Claps, G.; Cocilovo, V.; Cordella, F.; Crisanti, F.; D'Arcangelo, O.; De Angeli, M.; Di Troia, C.; Esposito, B.; Farina, D.; Figini, L.; Fogaccia, G.; Frigione, D.; Fusco, V.; Gabellieri, L.; Garavaglia, S.; Giovannozzi, E.; Granucci, G.; Iafrati, M.; Iannone, F.; Lontano, M.; Maddaluno, G.; Magagnino, S.; Marinucci, M.; Marocco, D.; Mazzitelli, G.; Mazzotta, C.; Milovanov, A.; Minelli, D.; Mirizzi, F. C.; Moro, A.; Nowak, S.; Pacella, D.; Panaccione, L.; Panella, M.; Pericoli-Ridolfini, V.; Pizzuto, A.; Podda, S.; Ramogida, G.; Ravera, G.; Ricci, D.; Romano, A.; Sozzi, C.; Tuccillo, A. A.; Tudisco, O.; Viola, B.; Vitale, V.; Vlad, G.; Zerbini, M.; Zonca, F.; Aquilini, M.; Cefali, P.; Di Ferdinando, E.; Di Giovenale, S.; Giacomi, G.; Grosso, A.; Mellera, V.; Mezzacappa, M.; Pensa, A.; Petrolini, P.; Piergotti, V.; Raspante, B.; Rocchi, G.; Sibio, A.; Tilia, B.; Tulli, R.; Vellucci, M.; Zannetti, D.; Bogdanovic-Radovic, I.; Carnevale, D.; Casolari, A.; Ciotti, M.; Conti, C.; Dinca, P. P.; Dolci, V.; Galperti, C.; Gospodarczyk, M.; Grosso, G.; Lubiako, L.; Lungu, M.; Martin-Solis, J. R.; Meineri, C.; Murtas, F.; Nardone, A.; Orsitto, F. P.; Perelli Cippo, E.; Popovic, Z.; Ripamonti, D.; Simonetto, A.; Tartari, U.

2017-10-01

Experiments on runaway electrons have been performed for the determination of the critical electric field for runaway generation. A large database of post-disruption runaway beams has been analyzed in order to identify linear dynamical models for new position and current runaway beam controllers, and experiments of electron cyclotron assisted plasma start-up have shown the presence of runaway electrons also below the expected electric field threshold, indicating that the radio-frequency power acts as seeding for fast electrons. A linear micro-stability analysis of neon-doped pulses has been carried out to investigate the mechanisms leading to the observed density peaking. A study of the ion drift effects on the MARFE instability has been performed and the peaking of density profile in the high density regime has been well reproduced using a thermo-diffusive pinch in the particle transport equation. The study of the density limit performed in the past has been extended towards lower values of toroidal magnetic field and plasma current. The analysis of the linear stability of the 2/1 tearing mode observed in high density plasmas has highlighted a destabilization with increasing peaking of the current profile during the density ramp-up, while the final phase of the mode temporal evolution is characterized by limit cycles on the amplitude/frequency plane. A liquid lithium limiter with thermal load capability up to 10 MW m-2 has been tested. The pulse duration has been extended up to 4.5 s and elongated configurations have been obtained for 3.5 s, with the X-point just outside the plasma chamber. A W/Fe sample has been exposed in the scrape-off layer in order to study the sputtering of Fe and the W enrichment of the surface layer. Dusts have been collected and analyzed, showing that the metallic population exhibits a high fraction of magnetic grains. A new diagnostic for in-flight runaway electron studies has allowed the image and the visible/infrared spectrum of the forward and backward synchrotron radiation to be provided simultaneously. A fast infrared camera for thermo-graphic analysis has provided the pattern of the toroidal limiter heating by disruption heat loads, and a triple-GEM detector has been tested for soft x-ray diagnostics. The collective Thomson scattering diagnostic has been upgraded and used for investigations on parametric decay instability excitation by electron cyclotron beams correlated with magnetic islands, and new capabilities of the Cherenkov probe have been explored in the presence of beta-induced Alfvén eigenmodes associated to high amplitude magnetic islands.

Flexible, transparent and exceptionally high power output nanogenerators based on ultrathin ZnO nanoflakes

NASA Astrophysics Data System (ADS)

van Ngoc, Huynh; Kang, Dae Joon

2016-02-01

Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices.Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices. Electronic supplementary information (ESI) available: FE-SEM images of ZnO NFs grown on textile and FTO/glass substrates, XRD patterns of synthesized ZnO NFs, nitrogen adsorption isotherms for ZnO NWs and ZnO NFs, effect of different coating layers on ZnO NFNGs, P(VDF-TrFE) coating on ZnO NFs, output open-circuit voltages of a textile electrostatic NG based on P(VDF-TrFE) coated on ZnO NFs and a textile ZnO NFNG without an insulating layer generated by a sonic wave, NG-based triboelectric effects and PDMS-coated ZnO NF-based NGs grown on an ITO/PET substrate. See DOI: 10.1039/c5nr08324a

Controlling charge balance and exciton recombination by bipolar host in single-layer organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Tao, Youtian; Wang, Qiang; Ma, Dongge; Yang, Chuluo; Wang, Lixiang; Qin, Jingui; Wang, Fosong

2010-08-01

Highly efficient single-layer organic light-emitting diodes with reduced efficiency roll-off are demonstrated by using a bipolar host material of 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) doped with iridium complexes as the emissive layer. For example, the green single-layer device, employing fac-tris(2-phenylpyridine)iridium Ir(ppy)3 as dopant, shows a peak current efficiency of 45.57 cd A-1, corresponding to external quantum efficiency (EQE) of 12.42%, and still exhibits efficiencies of 45.26 cd A-1 and 40.42 cd A-1 at luminance of 1000 and 10 000 cd m-2, respectively. In addition, the yellow and red single-layer devices, with bis(2-(9,9- diethyl-9H-fluoren-2-yl)-1-phenyl-1H-benzoimidazol-N ,C3)iridium(acetylacetonate) (fbi)2Ir(acac) and bis(1-phenylisoquinolinolato-C2,N)iridium(acetylacetonate) (piq)2Ir(acac) as emitter, also show high EQE of 7.04% and 7.28%, respectively. The transport properties of o-CzOXD film are well investigated by current-voltage measurement, from which both hole and electron mobility are determined. It is found that the o-CzOXD shows appealing bipolar transport character, which is favor for the balanced charge distribution in the whole doped zone. More importantly, the multifunctional role of hole trapping and electron transporting of the iridium complex in o-CzOXD further balances the charge carriers and broadens the recombination zone. As a result, the recombination of electrons and holes is significantly improved and the triplet-triplet annihilation and triplet-polaron quenching processes are effectively suppressed, eventually leading to the high efficiency as well as the reduced efficiency roll-off.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

PubMed

Mishchenko, A; Tu, J S; Cao, Y; Gorbachev, R V; Wallbank, J R; Greenaway, M T; Morozov, V E; Morozov, S V; Zhu, M J; Wong, S L; Withers, F; Woods, C R; Kim, Y-J; Watanabe, K; Taniguchi, T; Vdovin, E E; Makarovsky, O; Fromhold, T M; Fal'ko, V I; Geim, A K; Eaves, L; Novoselov, K S

2014-10-01

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.

Performance enhancement of molten carbonate-based direct carbon fuel cell (MC-DCFC) via adding mixed ionic-electronic conductors into Ni anode catalyst layer

NASA Astrophysics Data System (ADS)

Lee, Eun-Kyung; Park, Shin-Ae; Jung, Hyun-Woo; Kim, Yong-Tae

2018-05-01

A high overpotential in the anode of Direct Carbon Fuel Cells (DCFC) is ascribed to the sluggish kinetics of solid fuel oxidation. In this study, we demonstrate a unique approach to enhance the performance of molten-carbonate electrolyte based DCFC (MC-DCFC) by decreasing a serious polarization loss at the anode side; a simple addition of lanthanum strontium cobalt ferrite (LSCF) having a function of mixed ionic-electronic conductors (MIEC) into the Ni anode catalyst layer. Ni:LSCF = 1:1 showed markedly enhanced peak power density of 111 mW/cm2, approximately two-fold higher value than that for the anode using solely Ni and one of the best record in the literature value using carbon black fuel without any contribution of generated syngas oxidation. As can be noted from the electrochemical impedance spectroscopy data, the ohmic and the charge transfer resistance of the anode was markedly decreased owing to the high ionic-electronic conductivity of the MIECs. Furthermore, the enhanced performance can be also attributed to the maximized TPBs (triple phase boundaries) that participate in the carbon oxidation reaction. Based on the results, we suggest that the addition of MIEC materials into the Ni anode catalyst layer is a promising approach to improve the performance of MC-DCFC.

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors

NASA Astrophysics Data System (ADS)

Balliou, A.; Douvas, A. M.; Normand, P.; Tsikritzis, D.; Kennou, S.; Argitis, P.; Glezos, N.

2014-10-01

In this work we study the utilization of molecular transition metal oxides known as polyoxometalates (POMs), in particular the Keggin structure anions of the formula PW12O403-, as active nodes for potential switching and/or fast writing memory applications. The active molecules are being integrated in hybrid Metal-Insulator/POM molecules-Semiconductor capacitors, which serve as prototypes allowing investigation of critical performance characteristics towards the design of more sophisticated devices. The charging ability as well as the electronic structure of the molecular layer is probed by means of electrical characterization, namely, capacitance-voltage and current-voltage measurements, as well as transient capacitance measurements, C (t), under step voltage polarization. It is argued that the transient current peaks observed are manifestations of dynamic carrier exchange between the gate electrode and specific molecular levels, while the transient C (t) curves under conditions of molecular charging can supply information for the rate of change of the charge that is being trapped and de-trapped within the molecular layer. Structural characterization via surface and cross sectional scanning electron microscopy as well as atomic force microscopy, spectroscopic ellipsometry, UV and Fourier-transform IR spectroscopies, UPS, and XPS contribute to the extraction of accurate electronic structure characteristics and open the path for the design of new devices with on-demand tuning of their interfacial properties via the controlled preparation of the POM layer.

Optical and structural properties in type-II InAlAs/AlGaAs quantum dots observed by photoluminescence, X-ray diffraction and transmission electron microscopy

NASA Astrophysics Data System (ADS)

Ben Daly, A.; Craciun, D.; Laura Ursu, E.; Lemaître, A.; Maaref, M. A.; Iacomi, F.; Vasile, B. S.; Craciun, V.

2017-10-01

We present the effects of AlGaAs alloy composition on InAlAs quantum dots (QDs) optical and structural properties. Photoluminescence (PL) analysis of samples having a variety of aluminium composition values covering type-II transitions clearly in QDs showed the presence of two transitions X-Sh and X-Ph. High-resolution X-ray diffraction (HRXRD) investigations showed that the layers grew epitaxially on the GaAs substrate, with no relaxation regardless the Al content of AlGaAs layer. From the reciprocal space map (RSM) investigation around (004) and (115) diffraction peaks, it was shown that the InAlAs layer is fully strained, the in-plane lattice parameters (a and b, a = b) being identical to those of GaAs substrate, while the c lattice parameter was dependent on the In and Al concentrations, being larger than that of the substrate. High-resolution transmission electronic microscopy (HRTEM) investigations confirmed that films grew epitaxially on the GaAs substrate with no visible dislocations or other major defects within the InAlAs/GaAlAs QDs structure.

Formation of orbital-selective electron states in LaTiO3/SrTiO3 superlattices

NASA Astrophysics Data System (ADS)

Lechermann, Frank; Boehnke, Lewin; Grieger, Daniel

2013-06-01

The interface electronic structure of correlated LaTiO3/SrTiO3 superlattices is investigated by means of the charge self-consistent combination of the local density approximation (LDA) to density functional theory with dynamical mean-field theory. Utilizing a pseudopotential technique together with a continuous-time quantum Monte Carlo approach, the resulting complex multiorbital electronic states are addressed in a coherent fashion beyond static mean field. General structural relaxations are taken into account on the LDA level and cooperate with the driving forces from strong electronic correlations. This alliance leads to a Ti(3dxy) dominated low-energy quasiparticle peak and a lower Hubbard band in line with photoemission studies. Furthermore correlation effects close to the band-insulating bulk SrTiO3 limit as well as the Mott-insulating bulk LaTiO3 limit are studied via realistic single-layer embeddings.

Thermal response of the F region ionosphere in artificial modification experiments by HF radio waves

NASA Technical Reports Server (NTRS)

Mantas, G. P.; Lahoz, C. H.; Carlson, H. C., Jr.

1981-01-01

The thermal response of the nighttime F region ionosphere to local heating by HF radio waves has been observed with the incoherent scatter radar at Arecibo, Puerto Rico. The observations consist of high-resolution space and time variation of the electron temperature as a high-power HF transmitter is switched on and off with a period 240 s. As soon as the HF transmitter is turned on, the electron temperature begins to rise rapidly in a narrow altitude region near 300 km, below the F2 layer peak. The electron temperature perturbation subsequently spreads over a broader altitude region. The observations are compared with the anticipated thermal response of the ionosphere based on numerical solutions of the coupled time-dependent heat conduction equations for the electron and composite ion gases and are found to be in good agreement over the entire altitude region covered by the observations.

Two temperature approach to femtosecond laser oxidation of molybdenum and morphological study

NASA Astrophysics Data System (ADS)

Kotsedi, L.; Kaviyarasu, K.; Fuku, X. G.; Eaton, S. M.; Amara, E. H.; Bireche, F.; Ramponi, R.; Maaza, M.

2017-11-01

The two-temperature model was used to gain insight into the thermal evolution of the hot electrons and the crystal lattice of the molybdenum thin coating during femtosecond laser treatment. The heat from the laser raised the bulk temperature of the sample through heat transfer from the hot electron to the crystal lattice of the material, which then led to the melting of the top layer of the film. This process resulted in the hot melt reacting ambient oxygen, which in turn oxidized the surface of molybdenum coating. The topological study and morphology of the oxidized film was conducted using high-resolution scanning electron microscope, with micrographs taken in both the cross-sectional geometry and normal incidence to the electron beam. The molybdenum oxide nanorods were clearly observed and the x-ray diffraction patterns showed the diffraction peaks due to molybdenum oxide.

Electroluminescence properties of LEDs based on electron-irradiated p-Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Shtel’makh, K. F.; Kalyadin, A. E.

2016-02-15

The electroluminescence (EL) in n{sup +}–p–p{sup +} light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current aremore » examined.« less

Fabrication of frequency selective surface for band stop IR-filter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, Akshita, E-mail: akshitamishra27@gmail.com; Sudheer,; Tiwari, P.

2016-05-23

Fabrication and characterization of frequency selective surfaces (FSS) on silicon dioxide/ silicon is reported. Electron beam lithography based techniques are used for the fabrication of periodic slot structure in tungsten layer on silicon dioxide/silicon. The fabrication process consists of growth of SiO{sub 2} on silicon, tungsten deposition, electron beam lithography, and wet etching of tungsten. The optical characterization of the structural pattern was carried out using fourier transform infrared spectroscopy (FTIR). The reflectance spectra clearly show a resonance peak at 9.09 µm in the mid infrared region. This indicates that the patterned surface acts as band stop filter in the mid-infraredmore » region.« less

Antibacterial Carbon Nanotubes by Impregnation with Copper Nanostructures

NASA Astrophysics Data System (ADS)

Palza, Humberto; Saldias, Natalia; Arriagada, Paulo; Palma, Patricia; Sanchez, Jorge

2017-08-01

The addition of metal-based nanoparticles on carbon nanotubes (CNT) is a relevant method producing multifunctional materials. In this context, CNT were dispersed in an ethanol/water solution containing copper acetate for their impregnation with different copper nanostructures by either a non-thermal or a thermal post-synthesis treatment. Our simple method is based on pure CNT in an air atmosphere without any other reagents. Particles without thermal treatment were present as a well-dispersed layered copper hydroxide acetate nanostructures on CNT, as confirmed by scanning and transmission (TEM) electron microscopies, and showing a characteristic x-ray diffraction peak at 6.6°. On the other hand, by thermal post-synthesis treatment at 300°C, these layered nanostructures became Cu2O nanoparticles of around 20 nm supported on CNT, as confirmed by TEM images and x-ray diffraction peaks. These copper nanostructures present on the CNT surface rendered antibacterial behavior to the resulting hybrid materials against both Staphylococcus aureus and Escherichia coli. These findings present for the first time a simple method for producing antibacterial CNT by direct impregnation of copper nanostructures.

Enhanced electronic and electrochemical properties of core-shelled V2O5-Pt nanowires

NASA Astrophysics Data System (ADS)

Pan, Ko-Ying; Wei, Da-Hua

2018-01-01

Platinum nanoparticles (Pt NPs) were decorated on vanadium pentoxide nanowires (V2O5 NWs) to form the core-shelled vanadium-platinum nanowires (Pt@V2O5 NWs) and their electrochemical activities for methanol oxidation were investigated. The synthetic procedure involved the synthesis of abundant vanadium pentoxide nanowires (V2O5 NWs) by a direct vapor-solid growth process (VS method), followed by atomic layer depositions (ALD) of platinum nanoparticles (Pt NPs) onto the V2O5 NWs. After the physical examinations, three designed deposition parameters (50, 100 and 150 cycles) of Pt NPs onto the V2O5 NWs by ALD process were successful. From the measurements of current-voltage (I-V) and cyclic voltammetry (CV) curves respectively, both the conductivity and the ratio of the forward anodic peak current (IF) to the reverse anodic peak current (IR) are enhancing proportionately to the deposition cycles of ALD process, which denotes that coating Pt atomic layers onto V2O5 nanowires indeed improves the catalytic performances than that of pure V2O5 nanowires.

Quantification of Honeycomb Number-Type Stacking Faults: Application to Na 3Ni 2BiO 6 Cathodes for Na-Ion Batteries

DOE PAGES

Liu, Jue; Yin, Liang; Wu, Lijun; ...

2016-08-17

Here, ordered and disordered samples of honeycomb-lattice Na 3Ni 2BiO 6 were investigated as cathodes for Na-ion batteries, and it was determined that the ordered sample exhibits better electrochemical performance, with a specific capacity of 104 mA h/g delivered at plateaus of 3.5 and 3.2 V (vs Na +/Na) with minimal capacity fade during extended cycling. Advanced imaging and diffraction investigations showed that the primary difference between the ordered and disordered samples is the amount of number-type stacking faults associated with the three possible centering choices for each honeycomb layer. A labeling scheme for assigning the number position of honeycombmore » layers is described, and it is shown that the translational shift vectors between layers provide the simplest method for classifying different repeat patterns. We demonstrate that the number position of honeycomb layers can be directly determined in high-angle annular dark-field scanning transmission electron microscopy (STEM-HAADF) imaging studies. By the use of fault models derived from STEM studies, it is shown that both the sharp, symmetric subcell peaks and the broad, asymmetric superstructure peaks in powder diffraction patterns can be quantitatively modeled. About 20% of the layers in the ordered monoclinic sample are faulted in a nonrandom manner, while the disordered sample stacking is not fully random but instead contains about 4% monoclinic order. Furthermore, it is shown that the ordered sample has a series of higher-order superstructure peaks associated with 6-, 9-, 12-, and 15-layer periods whose existence is transiently driven by the presence of long-range strain that is an inherent consequence of the synthesis mechanism revealed through the present diffraction and imaging studies. This strain is closely associated with a monoclinic shear that can be directly calculated from cell lattice parameters and is strongly correlated with the degree of ordering in the samples. The present results are broadly applicable to other honeycomb-lattice systems, including Li 2MnO 3 and related Li-excess cathode compositions.« less

Quantification of Honeycomb Number-Type Stacking Faults: Application to Na 3Ni 2BiO 6 Cathodes for Na-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jue; Yin, Liang; Wu, Lijun

Here, ordered and disordered samples of honeycomb-lattice Na 3Ni 2BiO 6 were investigated as cathodes for Na-ion batteries, and it was determined that the ordered sample exhibits better electrochemical performance, with a specific capacity of 104 mA h/g delivered at plateaus of 3.5 and 3.2 V (vs Na +/Na) with minimal capacity fade during extended cycling. Advanced imaging and diffraction investigations showed that the primary difference between the ordered and disordered samples is the amount of number-type stacking faults associated with the three possible centering choices for each honeycomb layer. A labeling scheme for assigning the number position of honeycombmore » layers is described, and it is shown that the translational shift vectors between layers provide the simplest method for classifying different repeat patterns. We demonstrate that the number position of honeycomb layers can be directly determined in high-angle annular dark-field scanning transmission electron microscopy (STEM-HAADF) imaging studies. By the use of fault models derived from STEM studies, it is shown that both the sharp, symmetric subcell peaks and the broad, asymmetric superstructure peaks in powder diffraction patterns can be quantitatively modeled. About 20% of the layers in the ordered monoclinic sample are faulted in a nonrandom manner, while the disordered sample stacking is not fully random but instead contains about 4% monoclinic order. Furthermore, it is shown that the ordered sample has a series of higher-order superstructure peaks associated with 6-, 9-, 12-, and 15-layer periods whose existence is transiently driven by the presence of long-range strain that is an inherent consequence of the synthesis mechanism revealed through the present diffraction and imaging studies. This strain is closely associated with a monoclinic shear that can be directly calculated from cell lattice parameters and is strongly correlated with the degree of ordering in the samples. The present results are broadly applicable to other honeycomb-lattice systems, including Li 2MnO 3 and related Li-excess cathode compositions.« less

XRD measurement of mean crystallite thickness of illite and illite/smectite: Reappraisal of the Kubler index and the Scherrer equation

USGS Publications Warehouse

Drits, Victor A.; Środoń, Jan; Eberl, D.D.

1997-01-01

The standard form of the Scherrer equation, which has been used to calculate the mean thickness of the coherent scattering domain (CSD) of illite crystals from X-ray diffraction (XRD) full width data at half maximum (FWHM) intensity, employs a constant, Ksh, of 0.89. Use of this constant is unjustified, even if swelling has no effect on peak broadening, because this constant is valid only if all CSDs have a single thickness. For different thickness distributions, the Scherrer “constant” has very different values.Analysis of fundamental particle thickness data (transmission electron microscopy, TEM) for samples of authigenic illite and illite/smectite from diagenetically altered pyroclastics and filamentous illites from sandstones reveals a unique family of lognormal thickness distributions for these clays. Experimental relations between the distributions' lognormal parameters and mean thicknesses are established. These relations then are used to calculate the mean thickness of CSDs for illitic samples from XRD FWHM, or from integral XRD peak widths (integrated intensity/maximum intensity).For mixed-layer illite/smectite, the measured thickness of the CSD corresponds to the mean thickness of the mixed-layer crystal. Using this measurement, the mean thickness of the fundamental particles that compose the mixed-layer crystals can be calculated after XRD determination of percent smectitic interlayers. The effect of mixed layering (swelling) on XRD peak width for these samples is eliminated by using the 003 reflection for glycolated samples, and the 001, 002 or 003 reflection for dehydrated, K-saturated samples. If this technique is applied to the 001 reflection of air-dried samples (Kubler index measurement), mean CSD thicknesses are underestimated due to the mixed-layering effect.The technique was calibrated using NEW MOD©-simulated XRD profiles of illite, and then tested on well-characterized illite and illite/smectite samples. The XRD measurements are in good agreement with estimates of the mean thickness of fundamental particles obtained both from TEM measurements and from fixed cations content, up to a mean value of 20 layers. Correction for instrumental broadening under the conditions employed here is unnecessary for this range of thicknesses.

Atomic layer deposition of two dimensional MoS{sub 2} on 150 mm substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valdivia, Arturo; Conley, John F., E-mail: jconley@eecs.oregonstate.edu; Tweet, Douglas J.

2016-03-15

Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS{sub 2} uniformly across 150 mm diameter SiO{sub 2}/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl{sub 5} and H{sub 2}S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E{sup 1}{sub 2g}) and out-of-plane (A{sub 1g}) modes of MoS{sub 2}. The separation of the E{sup 1}{sub 2g} and A{sub 1g} peaks is a function of the number of ALD cycles, shifting closer together with fewer layers. X-ray photoelectron spectroscopy indicates that stoichiometry is improved by postdeposition annealing in amore » sulfur ambient. High resolution transmission electron microscopy confirms the atomic spacing of monolayer MoS{sub 2} thin films.« less

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

PubMed

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Self-assembling of 2,3-phenyl/thienyl-substituted acrylic acids over polycrystalline gold

NASA Astrophysics Data System (ADS)

Csankó, K.; Kozma, G.; Valkai, L.; Kukovecz, Á.; Kónya, Z.; Sipos, P.; Pálinkó, I.

2013-07-01

Self-assembling layers were formed from sulfur-containing cinnamic acid analogues over polycrystalline Au surface. The horizontal organising forces were strong O-H⋯O and weaker C-H⋯S hydrogen bonds (the former interaction kept together the acid dimers serving as the fundamental unit, while the latter was crucial in the construction of the 2D layers), while the vertical organisation forces were provided by Au-S covalent bonds. Measurements by atomic force, scanning electron, infrared and Raman microscopies attested that the dimers were situated in a nearly perpendicular fashion to the Au surface providing a ˜30-40 nm thick organic "carpet" and out of this layer occasionally, peaks with height of ˜100-120 nm grew out. The outgrowth of these surface structures were most probably governed by the defects of the polycrystalline metal surface.

Performance of a single layer fuel cell based on a mixed proton-electron conducting composite

NASA Astrophysics Data System (ADS)

Zagórski, Krzysztof; Wachowski, Sebastian; Szymczewska, Dagmara; Mielewczyk-Gryń, Aleksandra; Jasiński, Piotr; Gazda, Maria

2017-06-01

Many of the challenges in solid oxide fuel cell technology stem from chemical and mechanical incompatibilities between the anode, cathode and electrolyte materials. Numerous attempts have been made to identify compatible materials. Here, these challenges are circumvented by the introduction of a working single layer fuel cell, fabricated from a composite of proton conducting BaCe0.6Zr0.2Y0.2O3-δ and a mixture of semiconducting oxides - Li2O, NiO, and ZnO. Structural and electrical properties of the composite, related to its fuel cell performance are investigated. The single layer fuel cell shows a maximum OCV of 0.83 V and a peak power density of 3.86 mW cm-2 at 600 °C. Activation and mass transport losses are identified as the major limiting factor for efficiency and power output.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

PubMed Central

2012-01-01

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm. PMID:23134721

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Huang, Yang; Wang, Junxi

In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wells light-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced bymore » 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.« less

Spectroscopic determination of surface geometry: Ti(0001)-H(1×1)

NASA Astrophysics Data System (ADS)

Feibelman, Peter J.; Hamann, D. R.

1980-02-01

The electronic structure of a Ti(0001) film covered by a monolayer of H is shown to depend strongly on the location of the H atom in the surface unit cell. Best agreement with experiment is found with the H's in three-fold sites, 0.8 a.u. outside the outer Ti layer. In this geometry the H atoms "heal" the surface-the clean Ti(0001) surface state near the Fermi level is removed and the outer layer d-like local density of states (LDOS) is quite similar to that of the interior. Additionally, the calculated work function is 4.0 eV and an H-derived peak in the calculated LDOS appears 5 eV below EF, in agreement with photoemission measurements.

Experimental study of surface plasmon-phonon polaritons in GaAs-based microstructures

NASA Astrophysics Data System (ADS)

Galimov, A. I.; Shalygin, V. A.; Moldavskaya, M. D.; Panevin, V. Yu; Melentyev, G. A.; Artemyev, A. A.; Firsov, D. A.; Vorobjev, L. E.; Klimko, G. V.; Usikova, A. A.; Komissarova, T. A.; Sedova, I. V.; Ivanov, S. V.

2018-03-01

Optical properties of a heavily-doped GaAs epitaxial layer with a regular grating at its surface have been experimentally investigated in the terahertz spectral range. Reflectivity spectra for the layer with a profiled surface drastically differ from those for the as-grown epilayer with a planar surface. For s-polarized radiation, this difference is totally caused by the electromagnetic wave diffraction at the grating. For p-polarized radiation, additional resonant dips arise due to excitation of surface plasmon-phonon polaritons. Terahertz radiation emission under significant electron heating in an applied pulsed electric field has also been studied. Polarization measurements revealed pronounced peaks related to surface plasmon-phonon polariton resonances of the first and second order in the emission spectra.

Tunable Properties of Exfoliated Polyvinylalcohol Nanocomposites by In Situ Coprecipitation of Layered Double Hydroxides

NASA Astrophysics Data System (ADS)

Liu, Jiajia; Yuen, Richard K. K.; Hu, Yuan

2017-10-01

Poly(vinyl alcohol) (PVA) nanocomposites were prepared by a “one step” method based on the coprecipitation of layered double hydroxide (LDH) nanosheets in the polymer aqueous solution. The morphology, fire resistance properties, mechanical and optical properties of the PVA/LDH nanocomposites were studied. The LDH nanosheets were homogeneously dispersed in the PVA matrix as indicated by X-ray diffraction (XRD) pattern and transmission electron microscopy (TEM) characterization. Meanwhile, the peak of heat release rate (pHRR) and total heat release (THR) were decreased by 58% and 28%, respectively. Storage modulus at 30 °C was increased, and the transmittance of more than 90% at the visible region was obtained upon addition of 5 wt% LDH.

Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balanta, M. A. G., E-mail: magbfisc@ifi.unicamp.br; Brasil, M. J. S. P.; Iikawa, F.

We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, wemore » discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks.« less

Ion and Electron Heating Characteristics of Magnetic Re- Connection in Mast Tokamak Merging Experiment

NASA Astrophysics Data System (ADS)

Tanabe, Hiroshi; Inomoto, Michiaki; Ono, Yasushi; Yamada, Takuma; Imazawa, Ryota; Cheng, Chio-Zong

2016-07-01

We present results of recent studies of high power heating of magnetic reconnection, the fundamental process of several astrophysical events such as solar flare, in the Mega Amp Spherical Tokamak (MAST) - the world largest merging experiment. In addition to the previously reported significant reconnection heating up to ˜1keV [1], detailed local profiles of electron and ion temperature have been measured using a ultra-fine 300 channel Ruby- and a 130 channel YAG-Thomson scattering and a new 32 channel ion Doppler tomography diagnostics [2]. 2D profile measurement of electron temperature revealed highly localized heating structure at the X point with the characteristic scale length of 0.02-0.05m0.3T), a thick layer of closed flux surface surrounding the current sheet sustains the temperature profile for longer time than the electron and ion energy relaxation time ˜4-10ms, finally forming triple peak structures of ion and electron temperatures at the X point and in the downstream. While the peak electron temperature at the X point increases with toroidal field, the bulk electron temperature and the ion temperature in the downstream are unaffected. [1] Y. Ono et.al., Plasma Phys. Control. Fusion 54, 124039 (2012) [2] H. Tanabe et. al., Nucl. Fusion 53, 093027 (2013). [3] H. Tanabe et.al., Phys. Rev. Lett. 115, 215004 (2015)

Radio science with voyager 1 at jupiter: preliminary profiles of the atmosphere and ionosphere.

PubMed

Eshleman, V R; Tyler, G L; Wood, G E; Lindal, G F; Anderson, J D; Levy, G S; Croft, T A

1979-06-01

A preliminarv profile of the atmosphere of Jupiter in the South Equatorial Belt shows (i) the tropopause occurring at a pressure level of 100 millibars and temperature of about 113K, (ii) a higher warm inversion layer at about the 35-millibar level, and (iii) a lower-altitude constant lapse rate matching the adiabatic value of about 2 K per kilometer, with the temperatutre reaching 150 K at the 600-millibar level. Preliminary afternoon and predawn ionospheric profiles at 12 degrees south latitude and near the equator, respectively, have topside plasma scale heights of 590 kilometers changing to 960 kilometers above an altitucde of 3500 kilometers for the dayside, and about 960 kilomneters at all measured heights above the peak for the nightside. The higher value of scale height corresponds to a plasma temperature of 1100 K under the assumption of a plasma of protons and electrons in ambipolar diffusive equilibrium. The peak electron concentration in the upper ionosphere is approximately 2 x 10(5) per cubic centimeter for the dayside and about a factor of 10 less for the nightside. These peaks occur at altitudes of 1600 and 2300 kilometers, respectively. Continuing analyses are expected to extend and refine these results, and to be used to investigate other regions and phenomena.

Online Chapmann Layer Calculator for Simulating the Ionosphere with Undergraduate and Graduate Students

NASA Astrophysics Data System (ADS)

Gross, N. A.; Withers, P.; Sojka, J. J.

2014-12-01

The Chapman Layer Model is a "textbook" model of the ionosphere (for example, "Theory of Planetary Atmospheres" by Chamberlain and Hunten, Academic Press (1978)). The model use fundamental assumptions about the neutral atmosphere, the flux of ionizing radiation, and the recombination rate to calculation the ionization rate, and ion/electron density for a single species atmosphere. We have developed a "Chapman Layer Calculator" application that is deployed on the web using Java. It allows the user to see how various parameters control ion density, peak height, and profile of the ionospheric layer. Users can adjust parameters relevant to thermosphere scale height (temperature, gravitational acceleration, molecular weight, neutral atmosphere density) and to Extreme Ultraviolet solar flux (reference EUV, distance from the Sun, and solar Zenith Angle) and then see how the layer changes. This allows the user to simulate the ionosphere on other planets, by adjusting to the appropriate parameters. This simulation has been used as an exploratory activity for the NASA/LWS - Heliophysics Summer School 2014 and has an accompanying activity guide.

Subtle design changes control the difference in colour reflection from the dorsal and ventral wing-membrane surfaces of the damselfly Matronoides cyaneipennis.

PubMed

Nixon, M R; Orr, A G; Vukusic, P

2013-01-28

The hind wings of males of the damselfly Matronoides cyaneipennis exhibit iridescence that is blue dorsally and green ventrally. These structures are used semiotically in agonistic and courtship display. Transmission electron microscopy reveals these colours are due to two near-identical 5-layer distributed Bragg reflectors, one placed either side of the wing membrane. Interestingly the thicknesses of corresponding layers in each distributed Bragg reflector are very similar for all but the second layer from each outer surface. This one key difference creates the significant disparity between the reflected spectra from the distributed Bragg reflectors and the observed colours of either side of the wing. Modelling indicates that modifications to the thickness of this layer alone create a greater change in the peak reflected wavelength than is observed for similar modifications to the thickness of any other layer. This results in an optimised and highly effective pair of semiotic reflector systems, based on extremely comparable design parameters, with relatively low material and biomechanical costs.

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in; Kanjilal, A.

2014-07-21

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used inmore » our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.« less

Ionospheric response to a recurrent magnetic storm during an event of High Speed Stream in October 2016.

NASA Astrophysics Data System (ADS)

Nicoli Candido, C. M.; Resende, L.; Becker-Guedes, F.; Batista, I. S.

2017-12-01

In this work we investigate the response of the low latitude ionosphere to recurrent geomagnetic activity caused by events of High speed streams (HSSs)/Corotating Interaction Regions (CIRs) during the low descending phase of solar activity in the solar cycle 24. Intense magnetic field regions called Corotating Interaction Regions or CIRs are created by the interaction of fast streams and slow streams ejected by long duration coronal holes in Sun. This interaction leads to an increase in the mean interplanetary magnetic field (IMF) which causes moderate and recurrent geomagnetic activity when interacts with the Earth's magnetosphere. The ionosphere can be affected by these phenomena by several ways, such as an increase (or decrease) of the plasma ionization, intensification of plasma instabilities during post-sunset/post-midnight hours and subsequent development of plasma irregularities/spread-F, as well as occurrence of plasma scintillation. Therefore, we investigate the low latitude ionospheric response during moderate geomagnetic storm associated to an event of High Speed Stream occurred during decreasing phase of solar activity in 2016. An additional ionization increasing is observed in Es layer during the main peak of the geomagnetic storm. We investigate two possible different mechanisms that caused these extras ionization: the role of prompt penetration of interplanetary electric field, IEFEy at equatorial region, and the energetic electrons precipitation on the E and F layers variations. Finally, we used data from Digisondes installed at equatorial region, São Luís, and at conjugate points in Brazilian latitudes, Boa Vista and Cachoeira Paulista. We analyzed the ionospheric parameters such as the critical frequency of F layer, foF2, the F layer peak height, hmF2, the F layer bottomside, h'F, the blanketing frequency of sporadic layer, fbEs, the virtual height of Es layer h'Es and the top frequency of the Es layer ftEs during this event.

Quantitative Study of Interface/Interphase in Epoxy/Graphene-Based Nanocomposites by Combining STEM and EELS.

PubMed

Liu, Yu; Hamon, Ann-Lenaig; Haghi-Ashtiani, Paul; Reiss, Thomas; Fan, Benhui; He, Delong; Bai, Jinbo

2016-12-14

A quantitative study of the interphase and interface of graphene nanoplatelets (GNPs)/epoxy and graphene oxide (GO)/epoxy was carried out by combining scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). The interphase regions between GNPs and epoxy matrix were clearly identified by the discrepancy of the plasmon peak positions in the low energy-loss spectra due to different valence electron densities. The spectrum acquisitions were carried out along lines across the interface. An interphase thickness of 13 and 12.5 nm was measured for GNPs/epoxy and GO/epoxy, respectively. The density of the GNPs/epoxy interphase was 2.89% higher than that of the epoxy matrix. However, the density of the GO/epoxy interphase was 1.37% lower than that of the epoxy matrix. The interphase layer thickness measured in this work is in good agreement with the transition layer theory, which proposed an area with modulus linearly varying across a finite width. The results provide an insight into the interphase for carbon-based polymer composites that can help to design the functionalization of nanofillers to improve the composite properties.

Improvement of operation voltage and efficiency in inverted blue phosphorescent organic light-emitting devices

NASA Astrophysics Data System (ADS)

Chang, Chih-Hao; Huang, Hao Siang; Su, Yu-De; Liang, Yi-Hu; Chang, Yu-Shuo; Chiu, Chuan-Hao; Chang, Hsin-Hua

2013-09-01

Inverted organic light-emitting diodes (IOLEDs) have drawn considerable attention for use in active-matrix OLED (AMOLED) displays because of their easy integration with n-channel metal-oxide-based thin film transistors (TFTs). The most crucial issue for IOLEDs is the poor electron injection caused by the bottom cathode. According to previous reports, the turn-on voltages of FIrpic-based IOLEDs are within a range from 4 to 8 V. In this study, we focus on developing bottom-emission IOLEDs with low operating voltages through the use of adequate-charge injection materials. We successfully demonstrate a turn-on voltage as low as 3.7 V for blue phosphorescent IOLEDs. The effective electron injection layers (EIL) were constructed by combining an ultrathin aluminum layer, an alkali metal oxide layer and an organic layer doped with alkali metal oxide, allowing for the effective adjustment of the carrier balance in IOLEDs. The peak efficiencies of the IOLEDs reached 15.6%, 31.8 cd/A and 23.4 lm/W. An external nanocomposite scattering layer was used to further improve light extraction efficiency. The IOLEDs equipped with the SiO2 nanocomposite scattering layer respectively provided performance improvements of 1.3 and 1.5 times that of pristine blue phosphorescent IOLEDs at practical luminance levels of 100 cd/m2 and 1000 cd/m2. Through sophisticated EIL and external light-extraction structures, we obtained blue phosphorescent IOLEDs with satisfactory efficiency and low operation voltages, thereby demonstrating the great potential of nanocomposite film for application in IOLEDs.

Dielectric-Like Behavior of Graphene in Au Plasmon Resonator.

PubMed

Liu, Junku; Li, Qunqing; Chen, Mo; Ren, Mengxin; Zhang, Lihui; Xiao, Lin; Jiang, Kaili; Fan, Shoushan

2016-12-01

Graphene has proven to be a promising conductive layer in fabricating optical plasmon resonators on insulator substrate using electron beam lithography and has the potential to construct electrically controlled active plasmon resonators. In this study, we investigate the effect of graphene on plasmon resonance using graphene and Au plasmon resonator system as a model at visible and near-infrared wavelength. Our experiment data show that the presence of graphene does not weaken and annihilate the plasmon resonance peaks, instead it predominantly makes the peaks redshift, which is similar to the behavior of depositing SiO 2 film on Au plasmon resonators. This fact indicates that graphene predominantly exhibits dielectric-like behavior at visible and near-infrared wavelength, which can be attributed to the low carrier density in graphene compared with metals.

Microstructural, phase evolution and corrosion properties of silicon carbide reinforced pulse electrodeposited nickel-tungsten composite coatings

NASA Astrophysics Data System (ADS)

Singh, Swarnima; Sribalaji, M.; Wasekar, Nitin P.; Joshi, Srikant; Sundararajan, G.; Singh, Raghuvir; Keshri, Anup Kumar

2016-02-01

Silicon carbide (SiC) reinforced nickel-tungsten (Ni-W) coatings were successfully fabricated on steel substrate by pulse electrodeposition method (PED) and the amount of SiC was varied as 0 g/l, 2 g/l, and 5 g/l in Ni-W coating. Effect of subsequent addition of SiC on microstructures, phases and on corrosion property of the coating was investigated. Field emission scanning electron microscopy (FE-SEM) image of the surface morphology of the coating showed the transformation from the dome like structure to turtle shell like structure. X-ray diffraction (XRD) of Ni-W-5 g/l SiC showed the disappearance of (220) plane of Ni(W), peak splitting in major peak of Ni(W) and formation of distinct peak of W(Ni) solid solution. Absence of (220) plane, peak splitting and presence of W(Ni) solid solution was explained by the high resolution transmission electron microscopy (HR-TEM) images. Tafel polarization plot was used to study the corrosion property of the coatings in 0.5 M NaCl solution. Ni-W-5 g/l SiC coating was showed higher corrosion resistance (i.e. ∼21% increase in corrosion potential, Ecorr) compared to Ni-W coating. Two simultaneous phenomena have been identified for the enhanced corrosion resistance of Ni-W-5 g/l SiC coating. (a) Presence of crystallographic texture (b) formation of continuous double barrier layer of NiWO4 and SiO2.

Kinetic-scale flux rope reconnection in periodic and line-tied geometries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sauppe, J. P.; Daughton, W.

Here, the collisionless reconnection of two parallel flux ropes driven by both the coalescence and kink instabilities is examined using fully kinetic simulations in periodic and line-tied geometries. The three-dimensional reconnection rate is computed from the maximum of the quasi-potential, Ξ≡-∫E·dℓ, where the integral of the electric field is taken along the magnetic field lines across the system. In periodic simulations in which the kink mode is nearly suppressed, reconnection is driven by the coalescence instability, and the peak rate is within 3%–8% of comparable 2D simulations. When a strong kink growth is observed, the peak reconnection rate drops bymore » 10%–25%, and there is a larger drop for lower guide field. With line-tied boundary conditions, the kink instability plays a key role in allowing the flux ropes to interact and partially reconnect. In this limit, the field lines with maximum quasi-potential are associated with a quasi-separatrix layer, and the electric field along these special field lines is supported predominantly by the divergence of the electron pressure tensor. Both of these features, along with the observed reconnection rate, are consistent with recent laboratory experiments on kinetic-scale flux ropes. In kinetic simulations, the non-gyrotropic pressure tensor terms contribute significantly more to the reconnecting electric field than do the gyrotropic terms, while contributions from the electron inertia are significant for field lines adjacent to the quasi-separatrix layer.« less

Kinetic-scale flux rope reconnection in periodic and line-tied geometries

DOE PAGES

Sauppe, J. P.; Daughton, W.

2017-12-28

Here, the collisionless reconnection of two parallel flux ropes driven by both the coalescence and kink instabilities is examined using fully kinetic simulations in periodic and line-tied geometries. The three-dimensional reconnection rate is computed from the maximum of the quasi-potential, Ξ≡-∫E·dℓ, where the integral of the electric field is taken along the magnetic field lines across the system. In periodic simulations in which the kink mode is nearly suppressed, reconnection is driven by the coalescence instability, and the peak rate is within 3%–8% of comparable 2D simulations. When a strong kink growth is observed, the peak reconnection rate drops bymore » 10%–25%, and there is a larger drop for lower guide field. With line-tied boundary conditions, the kink instability plays a key role in allowing the flux ropes to interact and partially reconnect. In this limit, the field lines with maximum quasi-potential are associated with a quasi-separatrix layer, and the electric field along these special field lines is supported predominantly by the divergence of the electron pressure tensor. Both of these features, along with the observed reconnection rate, are consistent with recent laboratory experiments on kinetic-scale flux ropes. In kinetic simulations, the non-gyrotropic pressure tensor terms contribute significantly more to the reconnecting electric field than do the gyrotropic terms, while contributions from the electron inertia are significant for field lines adjacent to the quasi-separatrix layer.« less

Protected electrode structures and methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhaylik, Yuriy V.; Laramie, Michael G.; Kopera, John Joseph Christopher

2017-08-08

An electrode structure and its method of manufacture are disclosed. The disclosed electrode structures may be manufactured by depositing a first release layer on a first carrier substrate. A first protective layer may be deposited on a surface of the first release layer and a first electroactive material layer may then be deposited on the first protective layer. The first release layer may have a low mean peak to valley surface roughness, which may enable the formation of a thin protective layer with a low mean peak to valley surface roughness.

The dayside ionospheres of Mars and Venus: Comparing a one-dimensional photochemical model with MaRS (Mars Express) and VeRa (Venus Express) observations

NASA Astrophysics Data System (ADS)

Peter, Kerstin; Pätzold, Martin; Molina-Cuberos, Gregorio; Witasse, Olivier; González-Galindo, F.; Withers, Paul; Bird, Michael K.; Häusler, Bernd; Hinson, David P.; Tellmann, Silvia; Tyler, G. Leonard

2014-05-01

The electron density distributions of the lower ionospheres of Mars and Venus are mainly dependent on the solar X-ray and EUV flux and the solar zenith angle. The influence of an increasing solar flux is clearly seen in the increase of the observed peak electron density and total electron content (TEC) of the main ionospheric layers. The model “Ionization in Atmospheres” (IonA) was developed to compare ionospheric radio sounding observations, which were performed with the radio science experiments MaRS on Mars Express and VeRa on Venus Express, with simulated electron density profiles of the Mars and Venus ionospheres. This was done for actual observation conditions (solar flux, solar zenith angle, planetary coordinates) from the bases of the ionospheres to ∼160 km altitude. IonA uses models of the neutral atmospheres at ionospheric altitudes (Mars Climate Database (MCD) v4.3 for Mars; VenusGRAM/VIRA for Venus) and solar flux information in the 0.5-95 nm wavelength range (X-ray to EUV) from the SOLAR2000 data base. The comparison between the observed electron density profiles and the IonA profiles for Mars, simulated for a selected MCD scenario (background atmosphere), shows that the general behavior of the Mars ionosphere is reproduced by all scenarios. The MCD “low solar flux/clear atmosphere” and “low solar flux/MY24” scenarios agree best (on average) with the MaRS set of observations, although the actual Mars atmosphere seemed to be still slightly colder at ionospheric altitudes. For Venus, the VenusGRAM model, based on VIRA, is too limited to be used for the IonA simulation of electron density profiles. The behavior of the V2 peak electron density and TEC as a function of solar zenith angle are in general reproduced, but the peak densities and the TEC are either over- or underestimated for low or high solar EUV fluxes, respectively. The simulated V2 peak altitudes are systematically underestimated by 5 km on average for solar zenith angles less than 45° and the peak altitudes rise for zenith angles larger than 60°. The latter is the opposite of the observed behavior. The explanation is that VIRA and VenusGRAM are valid only for high solar activity, although there is also very poor agreement with VeRa observations from the recent solar cycle, in which the solar activity increases to high values. The disagreement between the observation and simulation of the Venus electron density profiles proves, that the true encountered Venus atmosphere at ionospheric altitudes was denser but locally cooler than predicted by VIRA.

The Effects of Surface Reconstruction and Electron-Positron Correlation on the Annihilation Characteristics of Positrons Trapped at Semiconductor Surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fazleev, N. G.; Department of Physics, Kazan State University, Kazan 420008; Jung, E.

2009-03-10

Experimental positron annihilation induced Auger electron spectroscopy (PAES) data from Ge(100) and Ge(111) surfaces display several strong Auger peaks corresponding to M{sub 4,5}N{sub 1}N{sub 2,3}, M{sub 2,3}M{sub 4,5}M{sub 4,5}, M{sub 2,3}M{sub 4,5}V, and M{sub 1}M{sub 4,5}M{sub 4,5} Auger transitions. The integrated peak intensities of Auger transitions have been used to obtain experimental annihilation probabilities for the Ge 3d and 3p core electrons. The experimental data were analyzed by performing theoretical studies of the effects of surface reconstructions and electron-positron correlations on image potential induced surface states and annihilation characteristics of positrons trapped at the reconstructed Ge(100) and Ge(111) surfaces. Calculationsmore » of positron surface states and annihilation characteristics have been performed for Ge(100) surface with (2x1), (2x2), and (4x2) reconstructions, and for Ge(111) surface with c(2x8) reconstruction. Estimates of the positron binding energy and annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of the semiconductor and to the approximations used to describe electron-positron correlations. The results of these theoretical studies are compared with the ones obtained for the reconstructed Si(100)-(2x1) and Si(111)-(7x7) surfaces.« less

Chromospheric evaporation flows and density changes deduced from Hinode/EIS during an M1.6 flare

NASA Astrophysics Data System (ADS)

Gömöry, P.; Veronig, A. M.; Su, Y.; Temmer, M.; Thalmann, J. K.

2016-04-01

Aims: We study the response of the solar atmosphere during a GOES M1.6 flare using spectroscopic and imaging observations. In particular, we examine the evolution of the mass flows and electron density together with the energy input derived from hard X-ray (HXR) in the context of chromospheric evaporation. Methods: We analyzed high-cadence sit-and-stare observations acquired with the Hinode/EIS spectrometer in the Fe xiii 202.044 Å (log T = 6.2) and Fe xvi 262.980 Å (log T = 6.4) spectral lines to derive temporal variations of the line intensity, Doppler shifts, and electron density during the flare. We combined these data with HXR measurements acquired with RHESSI to derive the energy input to the lower atmosphere by flare-accelerated electrons. Results: During the flare impulsive phase, we observe no significant flows in the cooler Fe xiii line but strong upflows, up to 80-150 km s-1, in the hotter Fe xvi line. The largest Doppler shifts observed in the Fe xvi line were co-temporal with the sharp intensity peak. The electron density obtained from a Fe xiii line pair ratio exhibited fast increase (within two minutes) from the pre-flare level of 5.01 × 109 cm-3 to 3.16 × 1010 cm-3 during the flare peak. The nonthermal energy flux density deposited from the coronal acceleration site to the lower atmospheric layers during the flare peak was found to be 1.34 × 1010 erg s-1 cm-2 for a low-energy cut-off that was estimated to be 16 keV. During the decline flare phase, we found a secondary intensity and density peak of lower amplitude that was preceded by upflows of ~15 km s-1 that were detected in both lines. The flare was also accompanied by a filament eruption that was partly captured by the EIS observations. We derived Doppler velocities of 250-300 km s-1 for the upflowing filament material. Conclusions: The spectroscopic results for the flare peak are consistent with the scenario of explosive chromospheric evaporation, although a comparatively low value of the nonthermal energy flux density was determined for this phase of the flare. This outcome is discussed in the context of recent hydrodynamic simulations. It provides observational evidence that the response of the atmospheric plasma strongly depends on the properties of the electron beams responsible for the heating, in particular the steepness of the energy distribution. The secondary peak of line intensity and electron density detected during the decline phase is interpreted as a signature of flare loops being filled by expanding hot material that is due to chromospheric evaporation. A movie is available at http://www.aanda.org

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Biao; Zhou, Keqing; Jiang, Saihua

Highlights: • Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method. • We prepare PMMA/LZnS nanocomposites by in situ bulk polymerization of MMA. • PMMA/LZnS nanocomposites were investigated by TGA, DSC, MCC, UV–vis and PL test. • The thermal stability, flame retardant and optical properties of PMMA are improved. - Abstract: Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method and poly(methyl methacrylate) (PMMA)/layered zinc sulfide nanocomposites were obtained by in situ bulk polymerization of methyl methacrylate (MMA). X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the as-synthesized layered zinc sulfide and PMMA/layered zincmore » sulfide nanocomposites. Microscale combustion calorimeter (MCC), differential scanning calorimeter (DSC) and thermogravimetric analysis (TGA) were used to test the thermal properties of the composites. Ultraviolet visible (UV–vis) transmittance spectra and photoluminence (PL) spectra were obtained to investigate the optical properties of the composites. From the results, the thermal degradation temperature is increased by 20–50 °C, the peak of heat release rate (pHRR) and total heat release (THR) are both decreased by above 30%, and the photoluminence intensity is enhanced with the increasing loading of layered zinc sulfide.« less

Remote catalyzation for direct formation of graphene layers on oxides.

PubMed

Teng, Po-Yuan; Lu, Chun-Chieh; Akiyama-Hasegawa, Kotone; Lin, Yung-Chang; Yeh, Chao-Hui; Suenaga, Kazu; Chiu, Po-Wen

2012-03-14

Direct deposition of high-quality graphene layers on insulating substrates such as SiO(2) paves the way toward the development of graphene-based high-speed electronics. Here, we describe a novel growth technique that enables the direct deposition of graphene layers on SiO(2) with crystalline quality potentially comparable to graphene grown on Cu foils using chemical vapor deposition (CVD). Rather than using Cu foils as substrates, our approach uses them to provide subliming Cu atoms in the CVD process. The prime feature of the proposed technique is remote catalyzation using floating Cu and H atoms for the decomposition of hydrocarbons. This allows for the direct graphitization of carbon radicals on oxide surfaces, forming isolated low-defect graphene layers without the need for postgrowth etching or evaporation of the metal catalyst. The defect density of the resulting graphene layers can be significantly reduced by tuning growth parameters such as the gas ratios, Cu surface areas, and substrate-to-Cu distance. Under optimized conditions, graphene layers with nondiscernible Raman D peaks can be obtained when predeposited graphite flakes are used as seeds for extended growth. © 2012 American Chemical Society

Electron Spectroscopy Studies of Iron, Iron Sulfides and Supported Iron Surfaces: Chemisorption of Simple Gases.

NASA Astrophysics Data System (ADS)

Lee, Yiu Chung

EELS was used to investigate the chemisorption of oxygen and carbon on iron. The EELS spectra of oxidized iron show characteristic features with strong enhancement of the interband transitions involving the Fe 3d band (4.6 and 7.5 eV) and moderate enhancement of the M(,2,3) transition doublet (54.4 and 58.2 eV). The changes in the electron energy loss structures with an overlayer of graphitic or carbidic carbon were investigated. The adsorption and growth of iron on Ni(100) has been studied using the combined techniques of LEED and EELS. Initially iron grows by a layer-by-layer mechanism for the first few layers. High iron coverages result in the observation of complex LEED patterns with satellites around the main (1 x 1) diffraction sports. This is due to the formation of b.c.c. Fe(110) crystallites arranged in domains with different orientations. EELS studies show the presence of three stages in the growth of iron on Ni(100): low-coverage, film-like and bulk-like. Auger and EELS were used to study the iron sulfide (FeS(,2), Fe(,7)S(,8) and FeS) surfaces. A characteristic M(,2,3) VV Auger doublet with a separation of 5.0 eV was observed on the sulfides. An assignment of the electron energy loss peaks was made based on the energy dependence of the loss peaks and previous photoemission results. The effect of argon ion bombardment was studied. Peaks with strong iron and sulfur character were observed. Heating the damaged sulfides results in reconstruction of the sulfide surfaces. The reactions of the sulfides with simple gases, such as H(,2), CO, CH(,4), C(,2)H(,4), NH(,3) and O(,2) were also studied. Using XPS, the chemisorption of SO(,2) on CaO(100) has been studied. The chemical state of sulfur has been identified as that of sulfate. The kinetics of SO(,2) chemisorption on CaO are discussed. The binding states of Fe and Na on CaO were determined to be Fe('2+) and Na('+) respectively. At low Fe or Na coverages (< 0.5 ML), there is a large increase in the rate of sulfate formation at low SO(,2) exposures (< 3 L). This increase is explained by the 'activation' of SO(,2) chemisorption sites by Fe or Na adatoms.

On the mid-latitude ionospheric storm association with intense geomagnetic storms

NASA Astrophysics Data System (ADS)

Okpala, Kingsley Chukwudi; Ogbonna, Chinasa Edith

2018-04-01

The bulk association between ionospheric storms and geomagnetic storms has been studied. Hemispheric features of seasonal variation of ionospheric storms in the mid-latitude were also investigated. 188 intense geomagnetic storms (Dst ≤ 100 nT) that occurred during solar cycles 22 and 23 were considered, of which 143 were observed to be identified with an ionospheric storm. Individual ionospheric storms were identified as maximum deviations of the F2 layer peak electron density from quiet time values. Only ionospheric storms that could clearly be associated with the peak of a geomagnetic storm were considered. Data from two mid-latitude ionosonde stations; one in the northern hemisphere (i.e. Moscow) and the other in the southern hemisphere (Grahamstown) were used to study ionospheric conditions at the time of the individual geomagnetic storms. Results show hemispheric and latitudinal differences in the intensity and nature of ionospheric storms association with different types of geomagnetic storms. These results are significant for our present understanding of the mechanisms which drive the changes in electron density during different types of ionospheric storms.

A Study of Ionospheric Storm Association with Intense Geomagnetic Storms

NASA Astrophysics Data System (ADS)

Okpala, K. C.

2017-12-01

The bulk association between ionospheric storms and geomagnetic storms have been studied. Hemispheric features of seasonal variation of ionospheric storms in the mid-latitude were also investigated. 188 intense geomagnetic storms (Dst ≤100nT) that occurred during solar cycle 22 and 23 were considered, of which 143 were observed to be identified with an ionospheric storm. Individual ionospheric storms were identified as maximum deviations of the F2 layer peak electron density from quiet time values. Only ionospheric storms that could clearly be associated with the peak of a geomagnetic storms were considered. Data from two mid-latitude ionosonde stations; one in the northern hemisphere (i.e Moscow) and the other in the southern hemisphere (Grahamstown) were used to study ionospheric condition at the time of the individual geomagnetic storms. Results show hemispheric and latitudinal differences in the intensity and nature of ionospheric storms association with different types of geomagnetic storms. These results are significant for our present understanding of the mechanisms which drive the changes in electron density during different types of ionospheric storms.

Quantitative Phase Fraction Detection in Organic Photovoltaic Materials through EELS Imaging

DOE PAGES

Dyck, Ondrej; Hu, Sheng; Das, Sanjib; ...

2015-11-24

Organic photovoltaic materials have recently seen intense interest from the research community. Improvements in device performance are occurring at an impressive rate; however, visualization of the active layer phase separation still remains a challenge. Our paper outlines the application of two electron energy-loss spectroscopic (EELS) imaging techniques that can complement and enhance current phase detection techniques. Specifically, the bulk plasmon peak position, often used to produce contrast between phases in energy filtered transmission electron microscopy (EFTEM), is quantitatively mapped across a sample cross section. One complementary spectrum image capturing the carbon and sulfur core loss edges is compared with themore » plasmon peak map and found to agree quite well, indicating that carbon and sulfur density differences between the two phases also allows phase discrimination. Additionally, an analytical technique for determining absolute atomic areal density is used to produce an absolute carbon and sulfur areal density map. We also show how these maps may be re-interpreted as a phase ratio map, giving quantitative information about the purity of the phases within the junction.« less

Insight into the split and asymmetry of charge distribution in biased M-structure superlattice

NASA Astrophysics Data System (ADS)

Liu, Lu; Bi, Han; Zhao, Yunhao; Zhao, Xuebing; Han, Xi; Wang, Guowei; Xu, Yingqiang; Li, Yuesheng; Che, Renchao

2017-07-01

The charge distribution in real space of an insertion variant based on an InAs/GaSb superlattice for an infrared detector is illustrated by in situ electron microscopy. The localization split of positive charge can be directly observed in the InAs/GaSb/AlSb/GaSb superlattice (M-structure) rather than in the InAs/GaSb superlattice. With the applied bias increasing from 0 to 4.5 V, the double peaks of positive charge density become asymmetrical gradually, with the peak integral ratio ranging from 1.13 to 2.54. Simultaneously, the negative charges move along the direction of the negative electric field. Without inserting the AlSb layer, the charge inversion occurs in both the hole wells and the electron wells of the InAs/GaSb superlattice under high bias. Such a discrepancy between the M-structure superlattice and the traditional superlattice suggests an effective reduction of tunneling probability of the M-structure design. Our result is of great help to understand the carrier immigration mechanism of the superlattice-based infrared detector.

Advances in understanding hydration of Portland cement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scrivener, Karen L., E-mail: Karen.scrivener@epfl.ch; Juilland, Patrick; Monteiro, Paulo J.M.

2015-12-15

Progress in understanding hydration is summarized. Evidence supports the geochemistry dissolution theory as an explanation for the induction period, in preference to the inhibiting layer theory. The growth of C–S–H is the principal factor controlling the main heat evolution peak. Electron microscopy indicates that C–S–H “needles” grow from the surface of grains. At the peak, the surface is covered, but deceleration cannot be attributed to diffusion control. The shoulder peak comes from renewed reaction of C{sub 3}A after depletion of sulfate in solution, but release of sulfate absorbed on C–S–H means that ettringite continues to form. After several days spacemore » becomes the major factor controlling hydration. The use of new analytical technique is improving our knowledge of the action of superplasticizers and leading to the design of molecules for different applications. Atomistic modeling is becoming a topic of increasing interest. Recent publications in this area are reviewed.« less

TEC data ingestion into IRI and NeQuick over the antarctic region

NASA Astrophysics Data System (ADS)

Nava, Bruno; Pezzopane, Michael; Radicella, Sandro M.; Scotto, Carlo; Pietrella, Marco; Migoya Orue, Yenca; Alazo Cuartas, Katy; Kashcheyev, Anton

2016-07-01

In the present work a comparative analysis to evaluate the IRI and NeQuick 2 models capabilities in reproducing the ionospheric behaviour over the Antarctic Region has been performed. A technique to adapt the two models to GNSS-derived vertical Total Electron Content (TEC) has been therefore implemented to retrieve the 3-D ionosphere electron density at specific locations where ionosonde data were available. In particular, the electron density profiles used in this study have been provided in the framework of the AUSPICIO (AUtomatic Scaling of Polar Ionograms and Cooperative Ionospheric Observations) project applying the Adaptive Ionospheric Profiler (AIP) to ionograms recorded at eight selected mid, high-latitude and polar ionosondes. The relevant GNSS-derived vertical TEC values have been obtained from the Global Ionosphere Maps (GIM) produced by the Center for Orbit Determination in Europe (CODE). The effectiveness of the IRI and NeQuick 2 in reconstructing the ionosphere electron density at the given locations and epochs has been primarily assessed in terms of statistical comparison between experimental and model-retrieved peak parameters values (foF2 and hmF2). The analysis results indicate that in general the models are equivalent in their ability to reproduce the critical frequency of the F2 layer and they also tend to overestimate the height of the peak electron density, especially during high solar activity periods. Nevertheless this tendency is more noticeable in NeQuick 2 than in IRI. For completeness, the statistics indicating the models bottomside reconstruction capabilities, computed as height integrated electron density profile mismodeling, will also be discussed.

New method for characterizing electron mediators in microbial systems using a thin-layer twin-working electrode cell.

PubMed

Hassan, Md Mahamudul; Cheng, Ka Yu; Ho, Goen; Cord-Ruwisch, Ralf

2017-01-15

Microbial biofilms are significant ecosystems where the existence of redox gradients drive electron transfer often via soluble electron mediators. This study describes the use of two interfacing working electrodes (WEs) to simulate redox gradients within close proximity (250µm) for the detection and quantification of electron mediators. By using a common counter and reference electrode, the potentials of the two WEs were independently controlled to maintain a suitable "voltage window", which enabled simultaneous oxidation and reduction of electron mediators as evidenced by the concurrent anodic and cathodic currents, respectively. To validate the method, the electrochemical properties of different mediators (hexacyanoferrate, HCF, riboflavin, RF) were characterized by stepwise shifting the "voltage window" (ranging between 25 and 200mV) within a range of potentials after steady equilibrium current of both WEs was established. The resulting differences in electrical currents between the two WEs were recorded across a defined potential spectrum (between -1V and +0.5V vs. Ag/AgCl). Results indicated that the technique enabled identification (by the distinct peak locations at the potential scale) and quantification (by the peak of current) of the mediators for individual species as well as in an aqueous mixture. It enabled a precise determination of mid-potentials of the externally added mediators (HCF, RF) and mediators produced by pyocyanin-producing Pseudomonas aeruginosa (WACC 91) culture. The twin working electrode described is particularly suitable for studying mediator-dependent microbial electron transfer processes or simulating redox gradients as they exist in microbial biofilms. Copyright © 2016 Elsevier B.V. All rights reserved.

Wavenumber-4 structures observed in the low-latitude ionosphere during low and high solar activity periods using FORMOSAT/COSMIC observations

NASA Astrophysics Data System (ADS)

Onohara, Amelia Naomi; Staciarini Batista, Inez; Prado Batista, Paulo

2018-03-01

The main purpose of this study is to investigate the four-peak structure observed in the low-latitude equatorial ionosphere by the FORMOSAT/COSMIC satellites. Longitudinal distributions of NmF2 (the density of the F layer peak) and hmF2 (ionospheric F2-layer peak height) averages, obtained around September equinox periods from 2007 to 2015, were submitted to a bi-spectral Fourier analysis in order to obtain the amplitudes and phases of the main waves. The four-peak structure in the equatorial and low-latitude ionosphere was present in both low and high solar activity periods. This kind of structure possibly has tropospheric origins related to the tidal waves propagating from below that modulate the E-region dynamo, mainly the eastward non-migrating diurnal tide with wavenumber 3 (DE3, E for eastward). This wave when combined with the migrating diurnal tide (DW1, W for westward) presents a wavenumber-4 (wave-4) structure under a synoptic view. Electron densities observed during 2008 and 2013 September equinoxes revealed that the wave-4 structures became more prominent around or above the F-region altitude peak (˜ 300-350 km). The four-peak structure remains up to higher ionosphere altitudes (˜ 800 km). Spectral analysis showed DE3 and SPW4 (stationary planetary wave with wavenumber 4) signatures at these altitudes. We found that a combination of DE3 and SPW4 with migrating tides is able to reproduce the wave-4 pattern in most of the ionospheric parameters. For the first time a study using wave variations in ionospheric observations for different altitude intervals and solar cycle was done. The conclusion is that the wave-4 structure observed at high altitudes in ionosphere is related to effects of the E-region dynamo combined with transport effects in the F region.

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

Comparison of ionospheric profile parameters with IRI-2012 model over Jicamarca

NASA Astrophysics Data System (ADS)

Bello, S. A.; Abdullah, M.; Hamid, N. S. A.; Reinisch, B. W.

2017-05-01

We used the hourly ionogram data obtained from Jicamarca station (12° S, 76.9° W, dip latitude: 1.0° N) an equatorial region to study the variation of the electron density profile parameters: maximum height of F2-layer (hmF2), bottomside thickness (B0) and shape (B1) parameter of F-layer. The period of study is for the year 2010 (solar minimum period).The diurnal monthly averages of these parameters are compared with the updated IRI-2012 model. The results show that hmF2 is highest during the daytime than nighttime. The variation in hmF2 was observed to modulate the thickness of the bottomside F2-layer. The observed hmF2 and B0 post-sunset peak is as result of the upward drift velocity of ionospheric plasma. We found a close agreement between IRI-CCIR hmF2 model and observed hmF2 during 0000-0700 LT while outside this period the model predictions deviate significantly with the observational values. Significant discrepancies are observed between the IRI model options for B0 and the observed B0 values. Specifically, the modeled values do not show B0 post-sunset peak. A fairly good agreement was observed between the observed B1 and IRI model options (ABT-2009 and Bill 2000) for B1.

Studies of the Ge(100) Surface Using a Low Energy Positron Beam: The Effects of Surface Reconstructions on Positron Trapping and Annihilation Characteristics

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Weiss, A. H.

2008-03-01

Positron annihilation induced Auger electron spectroscopy (PAES) has been applied to study the Ge(100) surface. The PAES spectrum from the Ge(100) surface displays several strong Auger peaks corresponding to M4,5N1N2,3 , M2,3M4,5M4,5 , M2,3M4,5V, and M1M4,5M4,5 Auger transitions. The integrated peak intensities of Auger transitions are used to obtain experimental annihilation probabilities for the Ge 3d and 3p core level electrons. The experimental results are analyzed by performing calculations of positron surface states and annihilation characteristics of surface trapped positrons with relevant Ge core-level electrons for the reconstructed Ge(100)-p(2x1), Ge(100)-p(2x2), and Ge(100)-c(4x2) surfaces. Estimates of positron binding energy, work function, and annihilation characteristics reveal their sensitivity to surface reconstruction of the topmost layers of clean Ge(100). These results are compared to the ones obtained for the reconstructed Si(100)-(2x1) and Si(100)-p(2x2) surfaces. A comparison with PAES data reveals an agreement with theoretical core annihilation probabilities for the Auger transitions considered.

Venus: mass, gravity field, atmosphere, and ionosphere as measured by the mariner 10 dual-frequency radio system.

PubMed

Howard, H T; Tyler, G L; Fjeldbo, G; Kliore, A J; Levy, G S; Brunn, D L; Dickinson, R; Edelson, R E; Martin, W L; Postal, R B; Seidel, B; Sesplaukis, T T; Shirley, D L; Stelzried, C T; Sweetnam, D N; Zygielbaum, A I; Esposito, P B; Anderson, J D; Shapiro, I I; Reasenberg, R D

1974-03-29

Analysis of the Doppler tracking data near encounter yields a value for the ratio of the mass of the sun to that of Venus of 408,523.9 +/- 1.2, which is in good agreement with prior determinations based on data from Mariner 2 and Mariner 5. Preliminary analysis indicates that the magnitudes of the fractional differences in the principal moments of inertia of Venus are no larger than 10(-4), given that the effects of gravity-field harmonics higher than the second are negligible. Additional analysis is needed to determine the influence of the higher order harmonics on this bound. Four distinct temperature inversions exist at altitudes of 56, 58, 61, and 63 kilometers. The X-band signal was much more rapidly attenuated than the S-band signal and disappeared completely at 52-kilometer altitude. The nightside ionosphere consists of two layers having a peak density of 10(4) electrons per cubic centimeter at altitudes of 140 and 120 kilometers. The dayside ionosphere has a peak density of 3 X 10(5) electrons per cubic centimeter at an altitude of 145 kilometers. The electron number density observed at higher altitudes was ten times less than that observed by Mariner 5, and no strong evidence for a well-defined plasmapause was found.

Studies of local structural distortions in strained ultrathin BaTiO3 films using scanning transmission electron microscopy.

PubMed

Park, Daesung; Herpers, Anja; Menke, Tobias; Heidelmann, Markus; Houben, Lothar; Dittmann, Regina; Mayer, Joachim

2014-06-01

Ultrathin ferroelectric heterostructures (SrTiO3/BaTiO3/BaRuO3/SrRuO3) were studied by scanning transmission electron microscopy (STEM) in terms of structural distortions and atomic displacements. The TiO2-termination at the top interface of the BaTiO3 layer was changed into a BaO-termination by adding an additional BaRuO3 layer. High-angle annular dark-field (HAADF) imaging by aberration-corrected STEM revealed that an artificially introduced BaO-termination can be achieved by this interface engineering. By using fast sequential imaging and frame-by-frame drift correction, the effect of the specimen drift was significantly reduced and the signal-to-noise ratio of the HAADF images was improved. Thus, a quantitative analysis of the HAADF images was feasible, and an in-plane and out-of-plane lattice spacing of the BaTiO3 layer of 3.90 and 4.22 Å were determined. A 25 pm shift of the Ti columns from the center of the unit cell of BaTiO3 along the c-axis was observed. By spatially resolved electron energy-loss spectroscopy studies, a reduction of the crystal field splitting (CFS, ΔL3=1.93 eV) and an asymmetric broadening of the eg peak were observed in the BaTiO3 film. These results verify the presence of a ferroelectric polarization in the ultrathin BaTiO3 film.

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

Strong Eu2+ light emission in Eu silicate through Eu3+ reduction in Eu2O3/Si multilayer deposited on Si substrates

PubMed Central

2013-01-01

Eu2O3/Si multilayer nanostructured films are deposited on Si substrates by magnetron sputtering. Transmission electron microscopy and X-ray diffraction measurements demonstrate that multicrystalline Eu silicate is homogeneously distributed in the film after high-temperature treatment in N2. The Eu2+ silicate is formed by the reaction of Eu2O3 and Si layers, showing an intense and broad room-temperature photoluminescence peak centered at 610 nm. It is found that the Si layer thickness in nanostructures has great influence on Eu ion optical behavior by forming different Eu silicate crystalline phases. These findings open a promising way to prepare efficient Eu2+ materials for photonic application. PMID:23618344

Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe{sub 2} layered semiconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Institute of Physics Azerbaijan National Academy of Sciences, AZ-1143 Baku

2014-12-07

The strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe{sub 2} semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process.

Crystal Identification in Dual-Layer-Offset DOI-PET Detectors Using Stratified Peak Tracking Based on SVD and Mean-Shift Algorithm

NASA Astrophysics Data System (ADS)

Wei, Qingyang; Dai, Tiantian; Ma, Tianyu; Liu, Yaqiang; Gu, Yu

2016-10-01

An Anger-logic based pixelated PET detector block requires a crystal position map (CPM) to assign the position of each detected event to a most probable crystal index. Accurate assignments are crucial to PET imaging performance. In this paper, we present a novel automatic approach to generate the CPMs for dual-layer offset (DLO) PET detectors using a stratified peak tracking method. In which, the top and bottom layers are distinguished by their intensity difference and the peaks of the top and bottom layers are tracked based on a singular value decomposition (SVD) and mean-shift algorithm in succession. The CPM is created by classifying each pixel to its nearest peak and assigning the pixel with the crystal index of that peak. A Matlab-based graphical user interface program was developed including the automatic algorithm and a manual interaction procedure. The algorithm was tested for three DLO PET detector blocks. Results show that the proposed method exhibits good performance as well as robustness for all the three blocks. Compared to the existing methods, our approach can directly distinguish the layer and crystal indices using the information of intensity and offset grid pattern.

Abnormal distribution of low-latitude ionospheric electron density during November 2004 superstorm as reconstructed by 3-D CT technique from IGS and LEO/GPS observations

NASA Astrophysics Data System (ADS)

Xiao, R.; Ma, S.; Xu, J.; Xiong, C.; Yan, W.; Luhr, H.; Jakowski, N.

2010-12-01

Using time-dependent 3-D tomography method, the electron density distributions in the mid- and low-latitude ionosphere are reconstructed from GPS observations of joint ground-based IGS network and onboard CHAMP/GRACE satellites during November 2004 super-storm. For LEO satellite-based GPS receiving, both the occultation TEC data and that along the radio propagation paths above the LEO are used. The electron density images versus latitude/altitude/longitude are reconstructed for different sectors of America/Asia/Europe and produced every hour. The reconstructed electron densities are validated by satellite in situ measurements of CHAMP Langmuir probe and GRACE Ka-band SST (low-low satellite-to-satellite tracking) derived electron density averaged between the two satellites, as well as by CIT simulations. It reveals some very interesting storm-time structures of Ne distributions, such as top-hat-like F2-3 double layer and column-like enhanced electron densities (CEED). The double layer structure appeared over a large latitude range from about -30 degree to 20 degree along East-Asian/Australia longitudes before local noon, looking like one additional smaller EIA structure standing above the usual one of EIA. It is consistent with the F-3 layer observed by ionosonde at an Australian low-latitude station. The CEED are found just 1-2 hours before the minimum of Dst and in the longitudinal sector about 157 E. They extend from the topside ionosphere toward plasmasphere, reaching at least about 2000 km as high. Their footprints stand on the two peaks of the EIA. This CEED is also seen in the image of 30.4 nm He ++ radiation by IMAGE, showing a narrow channel of enhanced density extending from afternoon ionosphere to plasmsphere westward. The forming mechanism of CEED and its relationship with SED and plasmaspheric plumes are worthy of further study. Acknowledgement: This work is supported by NSFC (No.40674078).

Modelling relativistic effects in momentum-resolved electron energy loss spectroscopy of graphene

NASA Astrophysics Data System (ADS)

Lyon, K.; Mowbray, D. J.; Miskovic, Z. L.

2018-02-01

We present an analytical model for the electron energy loss through a two-dimensional (2D) layer of graphene, fully taking into account relativistic effects. Using two different models for graphene's 2D conductivity, one a two-fluid hydrodynamic model with an added correction to account for the inter-band electron transitions near the Dirac point in undoped graphene, the other derived from ab initio plane-wave time-dependent density functional theory in the frequency domain (PW-TDDFT-ω) calculations applied on a graphene superlattice, we derive various different expressions for the probability density of energy and momentum transfer from the incident electron to graphene. To further compare with electron energy loss spectroscopy (EELS) experiments that use setups like scanning Transmission Electron Microscopy, we integrated our energy loss functions over a range of wavenumbers, and compared how the choice of range directly affects the shape, position, and relative heights of graphene's π → π* and σ → σ* transition peaks. Comparisons were made with experimental EELS data under different model inputs, revealing again the strong effect that the choice of wavenumber range has on the energy loss.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Crystal identification for a dual-layer-offset LYSO based PET system via Lu-176 background radiation and mean shift algorithm

NASA Astrophysics Data System (ADS)

Wei, Qingyang; Ma, Tianyu; Xu, Tianpeng; Zeng, Ming; Gu, Yu; Dai, Tiantian; Liu, Yaqiang

2018-01-01

Modern positron emission tomography (PET) detectors are made from pixelated scintillation crystal arrays and readout by Anger logic. The interaction position of the gamma-ray should be assigned to a crystal using a crystal position map or look-up table. Crystal identification is a critical procedure for pixelated PET systems. In this paper, we propose a novel crystal identification method for a dual-layer-offset LYSO based animal PET system via Lu-176 background radiation and mean shift algorithm. Single photon event data of the Lu-176 background radiation are acquired in list-mode for 3 h to generate a single photon flood map (SPFM). Coincidence events are obtained from the same data using time information to generate a coincidence flood map (CFM). The CFM is used to identify the peaks of the inner layer using the mean shift algorithm. The response of the inner layer is deducted from the SPFM by subtracting CFM. Then, the peaks of the outer layer are also identified using the mean shift algorithm. The automatically identified peaks are manually inspected by a graphical user interface program. Finally, a crystal position map is generated using a distance criterion based on these peaks. The proposed method is verified on the animal PET system with 48 detector blocks on a laptop with an Intel i7-5500U processor. The total runtime for whole system peak identification is 67.9 s. Results show that the automatic crystal identification has 99.98% and 99.09% accuracy for the peaks of the inner and outer layers of the whole system respectively. In conclusion, the proposed method is suitable for the dual-layer-offset lutetium based PET system to perform crystal identification instead of external radiation sources.

Immobilization of glucose oxidase into a nanoporous TiO₂ film layered on metallophthalocyanine modified vertically-aligned carbon nanotubes for efficient direct electron transfer.

PubMed

Cui, Hui-Fang; Zhang, Kuan; Zhang, Yong-Fang; Sun, Yu-Long; Wang, Jia; Zhang, Wei-De; Luong, John H T

2013-08-15

Glucose oxidase (GOD) was adsorbed into a nanoporous TiO₂ film layered on the surface of an iron phthalocyanine (FePc) vertically-aligned carbon nanotube (CNT) modified electrode. A Nafion film was then dropcast on the electrode's surface to improve operational and storage stabilities of the GOD-based electrode. Scanning electron microscopy (SEM) micrographs revealed the formation of FePc and nanoporous TiO₂ nanoparticles along the sidewall and the tip of CNTs. Cyclic voltammograms of the GOD electrode in neutral PBS exhibited a pair of well-defined redox peaks, attesting the direct electron transfer of GOD (FAD/FADH₂) with the underlying electrode. The potential of glucose electro-oxidation under nitrogen was ∼+0.12 V with an oxidation current density of 65.3 μA cm(-2) at +0.77 V. Voltammetric and amperometric responses were virtually unaffected by oxygen, illustrating an efficient and fast direct electron transfer. The modification of the CNT surface with FePc resulted in a biosensor with remarkable detection sensitivity with an oxygen-independent bioelectrocatalysis. In deaerated PBS, the biosensor displayed average response time of 12 s, linearity from 50 μM to 4 mM, and a detection limit of 30 μM (S/N=3) for glucose. Copyright © 2013 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar K.; Reddy, G. B.

In this work, we have successfully developed plasma assisted paste sublimation route to deposit vertically aligned MoO{sub 3} nanoflakes (NFs) on nickel coated glass substrate in oxygen plasma ambience with the assistant of Ni thin layer as a catalyst. In our case, sublimation source (Mo strip surface) is resistively heated by flowing current across it. The structural, morphological, and optical properties of NFs have been investigated systematically using x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), High resolution transmission electron microscopy (HRTEM), micro-Raman spectroscopy, and Photoluminescence (PL) spectroscopy. Studies reveal thatmore » the presence of oxygen plasma and the nickel thin layer are very essential for the growth of vertically aligned NFs. The observed results divulge that α-MoO{sub 3} NFs are deposited uniformly on large scale with very high aspect (height/thickness) ratio more than 30 and well aligned along [0 k 0] crystallographic direction where k is even (2, 4, 6). Raman spectrum shows a significant size effect on the vibrational property of MoO{sub 3} nanoflakes. The PL spectrum of MoO{sub 3} NFs was recorded at room temperature and four prominent peaks at 365 nm, 395 nm, 452 nm, and 465 nm corresponding to UV-visible region were observed. In this paper, a three step growth strategy for the formation of MoO{sub 3} NFs has been proposed in detail.« less

Renormalization of Fermi Velocity in a Composite Two Dimensional Electron Gas

NASA Astrophysics Data System (ADS)

Weger, M.; Burlachkov, L.

We calculate the self-energy Σ(k, ω) of an electron gas with a Coulomb interaction in a composite 2D system, consisting of metallic layers of thickness d ≳ a0, where a0 = ħ2ɛ1/me2 is the Bohr radius, separated by layers with a dielectric constant ɛ2 and a lattice constant c perpendicular to the planes. The behavior of the electron gas is determined by the dimensionless parameters kFa0 and kFc ɛ2/ɛ1. We find that when ɛ2/ɛ1 is large (≈5 or more), the velocity v(k) becomes strongly k-dependent near kF, and v(kF) is enhanced by a factor of 5-10. This behavior is similar to the one found by Lindhard in 1954 for an unscreened electron gas; however here we take screening into account. The peak in v(k) is very sharp (δk/kF is a few percent) and becomes sharper as ɛ2/ɛ1 increases. This velocity renormalization has dramatic effects on the transport properties; the conductivity at low T increases like the square of the velocity renormalization and the resistivity due to elastic scattering becomes temperature dependent, increasing approximately linearly with T. For scattering by phonons, ρ ∝ T2. Preliminary measurements suggest an increase in vk in YBCO very close to kF.

Hotspot electron temperature from x-ray continuum measurements on the NIF

NASA Astrophysics Data System (ADS)

Jarrott, L. C.; Benedetti, L. R.; Chen, H.; Izumi, N.; Khan, S. F.; Ma, T.; Nagel, S. R.; Landen, O. L.; Pak, A.; Patel, P. K.; Schneider, M.; Scott, H. A.

2016-11-01

We report on measurements of the electron temperature in the hotspot of inertially confined, layered, spherical implosions on the National Ignition Facility using a differential filtering diagnostic. Measurements of the DT and DD ion temperatures using neutron time-of-flight detectors are complicated by the contribution of hot spot motion to the peak width, which produce an apparent temperature higher than the thermal temperature. The electron temperature is not sensitive to this non-thermal velocity and is thus a valuable input to interpreting the stagnated hot spot conditions. Here we show that the current differential filtering diagnostic provides insufficient temperature resolution for the hot spot temperatures of interest. We then propose a new differential filter configuration utilizing larger pinhole size to increase spectral fluence, as well as thicker filtration. This new configuration will improve measurement uncertainty by more than a factor of three, allowing for a more accurate hotspot temperature.

Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel.

PubMed

Miao, Xin; Zhang, Chen; Li, Xiuling

2013-06-12

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 μS/μm, 435 μA/μm, and ~2.9 × 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.

Hotspot electron temperature from x-ray continuum measurements on the NIF.

PubMed

Jarrott, L C; Benedetti, L R; Chen, H; Izumi, N; Khan, S F; Ma, T; Nagel, S R; Landen, O L; Pak, A; Patel, P K; Schneider, M; Scott, H A

2016-11-01

We report on measurements of the electron temperature in the hotspot of inertially confined, layered, spherical implosions on the National Ignition Facility using a differential filtering diagnostic. Measurements of the DT and DD ion temperatures using neutron time-of-flight detectors are complicated by the contribution of hot spot motion to the peak width, which produce an apparent temperature higher than the thermal temperature. The electron temperature is not sensitive to this non-thermal velocity and is thus a valuable input to interpreting the stagnated hot spot conditions. Here we show that the current differential filtering diagnostic provides insufficient temperature resolution for the hot spot temperatures of interest. We then propose a new differential filter configuration utilizing larger pinhole size to increase spectral fluence, as well as thicker filtration. This new configuration will improve measurement uncertainty by more than a factor of three, allowing for a more accurate hotspot temperature.

A Global Atmospheric Model of Meteoric Iron

NASA Technical Reports Server (NTRS)

Feng, Wuhu; Marsh, Daniel R.; Chipperfield, Martyn P.; Janches, Diego; Hoffner, Josef; Yi, Fan; Plane, John M. C.

2013-01-01

The first global model of meteoric iron in the atmosphere (WACCM-Fe) has been developed by combining three components: the Whole Atmosphere Community Climate Model (WACCM), a description of the neutral and ion-molecule chemistry of iron in the mesosphere and lower thermosphere (MLT), and a treatment of the injection of meteoric constituents into the atmosphere. The iron chemistry treats seven neutral and four ionized iron containing species with 30 neutral and ion-molecule reactions. The meteoric input function (MIF), which describes the injection of Fe as a function of height, latitude, and day, is precalculated from an astronomical model coupled to a chemical meteoric ablation model (CABMOD). This newly developed WACCM-Fe model has been evaluated against a number of available ground-based lidar observations and performs well in simulating the mesospheric atomic Fe layer. The model reproduces the strong positive correlation of temperature and Fe density around the Fe layer peak and the large anticorrelation around 100 km. The diurnal tide has a significant effect in the middle of the layer, and the model also captures well the observed seasonal variations. However, the model overestimates the peak Fe+ concentration compared with the limited rocket-borne mass spectrometer data available, although good agreement on the ion layer underside can be obtained by adjusting the rate coefficients for dissociative recombination of Fe-molecular ions with electrons. Sensitivity experiments with the same chemistry in a 1-D model are used to highlight significant remaining uncertainties in reaction rate coefficients, and to explore the dependence of the total Fe abundance on the MIF and rate of vertical transport.

Raman microscopy of freeze-dried mouse eyeball-slice in conjunction with the "in vivo cryotechnique".

PubMed

Terada, Nobuo; Ohno, Nobuhiko; Saitoh, Sei; Fujii, Yasuhisa; Ohguro, Hiroshi; Ohno, Shinichi

2007-07-01

The wavelength of Raman-scattered light depends on the molecular composition of the substance. This is the first attempt to acquire Raman spectra of a mouse eyeball removed from a living mouse, in which the eyeball was preserved using the "in vivo cryotechnique" followed by freeze-drying. Eyeballs were cryofixed using a rapid freezing cryotechnique, and then sliced in the cryostat machine. The slices were sandwiched between glass slides, freeze-dried, and analyzed with confocal Raman microscopy. Important areas including various eyeball tissue layers were selected using bright-field microscopy, and then the Raman spectra were obtained at 240 locations. Four typical patterns of Raman spectra were electronically mapped on the specimen images obtained by the bright-field microscopy. Tissue organization was confirmed by embedding the same eyeball slice used for Raman spectra into epoxy resin and the thick sections were prepared with the inverted capsule method. Each Raman spectral pattern represents a different histological layer in the eyeball which was mapped by comparing the images of toluidine blue staining and Raman mapping with different colors. In the choroid and pigment cell layer, the Raman spectrum had two peaks, corresponding to melanin. Some of the peaks of the Raman spectra obtained from the blood vessels in sclera and the photoreceptor layer were similar to those obtained from the purified hemoglobin and rhodopsin proteins, respectively. Our experimental protocol can distinguish different tissue components with Raman microscopy; therefore, this method can be very useful for examining the distribution of a biological structures and/or chemical components in rapidly frozen freeze-dried tissue.

Communications Blackout Prediction for Atmospheric Entry of Mars Science Laboratory

NASA Technical Reports Server (NTRS)

Morabito, David; Edquist, Karl

2005-01-01

When a supersonic spacecraft enters a planetary atmosphere with v >> v(sub sound), a shock layer forms in the front of the body. An ionized sheath of plasma develops around the spacecraft, which results from the ionization of the atmospheric constituents as they are compressed and heated by the shock or heated within the boundary layer next to the surface. When the electron density surrounding the spacecraft becomes sufficiently high, communications can be disrupted (attenuation/blackout). During Mars Science Laboratory's (MSL's) atmospheric entry there will likely be a communication outage due to charged particles on the order of 60 to 100 seconds using a UHF link frequency looking out the shoulders of the wake region to orbiting relay asset. A UHF link looking out the base region would experience a shorter duration blackout, about 35 seconds for the stressed trajectory and possibly no blackout for the nominal trajectory. There is very little likelihood of a communications outage using X-band (however, X-band is not currently planned to be used during peak electron density phase of EDL).

Different Signatures of the Total Filling Factor 1 State

NASA Astrophysics Data System (ADS)

Tiemann, Lars; Yoon, Youngsoo; Schmult, Stefan; Hauser, Maik; Dietsche, Werner; von Klitzing, Klaus

2009-03-01

Bringing two 2-dimensional electron systems in close proximity can yield a correlated state as the electrons will experience the presence of the neighboring system. At the individual filling factors of 1/2 this leads to a new double-layer ground state as positive and negative charges from opposite layers couple to excitons. Many remarkable properties were found such as vanishing Hall and longitudinal resistances in the counterflow configuration [1], a resonantly enhanced zero bias tunneling peak [2], and more recently, a critical DC tunneling current and vanishingly small interlayer resistances in DC measurements [3]. We will show how it is possible to combine the results of these three different measurements into a consistent picture. Under certain conditions it is possible to exceed the critical currents but still observe a minimum at total filling factor 1 in the counterflow configuration.[1] M. Kellogg et al. PRL 93, 036801 (2004); E. Tutuc et al. PRL 93, 036802 (2004)[2] I.B. Spielman et al., PRL 87, 036803 (2001)[3] L. Tiemann et al., New Journal of Physics 10, 045018 (2008)

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

NASA Astrophysics Data System (ADS)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed.

Synthesis and optical properties of Mg-Al layered double hydroxides precursor powders

NASA Astrophysics Data System (ADS)

Lin, Chia-Hsuan; Chu, Hsueh-Liang; Hwang, Weng-Sing; Wang, Moo-Chin; Ko, Horng-Huey

2017-12-01

The synthesis and optical properties of Mg-Al layered double hydroxide (LDH) precursor powders were investigated using X-ray diffraction (XRD), Fourier transform-infrared (FT-IR) spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction (SAED), high-resolution TEM (HRTEM), UV-transmission spectrometer, and fluorescence spectrophotometer. The FT-IR results show that the intense absorption at around 1363-1377 cm-1 can be assigned to the antisymmetric ν3 mode of interlayer carbonate anions because the LDH phase contains some CO32-. The XRD results show that all of the Mg-Al LDH precursor powders contain only a single phase of [Mg0.833Al0.167(OH)2](CO3)0.083.(H2O)0.75 but have broad and weak intensities of peaks. All of Mg-Al LDHs precursor powders before calcination have the same photoluminescence (PL) spectra. Moreover, these spectra were excited at λex = 235 nm, and the broad emission band was in the range 325-650 nm. In the range, there were relatively strong intensity at around 360, 407 and 510 nm, respectively.

Graphite to Graphene via Graphene Oxide: An Overview on Synthesis, Properties, and Applications

NASA Astrophysics Data System (ADS)

Hansora, D. P.; Shimpi, N. G.; Mishra, S.

2015-12-01

This work represents a state-of-the-art technique developed for the preparation of graphene from graphite-metal electrodes by the arc-discharge method carried out in a continuous flow of water. Because of continuous arcing of graphite-metal electrodes, the graphene sheets were observed in water with uniformity and little damage. These nanosheets were subjected to various purification steps such as acid treatment, oxidation, water washing, centrifugation, and drying. The pure graphene sheets were analyzed using Raman spectrophotometry, x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), and tunneling electron microscopy (TEM). Peaks of Raman spectra were recorded at (1300-1400 cm-1) and (1500-1600 cm-1) for weak D-band and strong G-band, respectively. The XRD pattern showed 85.6% crystallinity of pure graphite, whereas pure graphene was 66.4% crystalline. TEM and FE-SEM micrographs revealed that graphene sheets were overlapped to each other and layer-by-layer formation was also observed. Beside this research work, we also reviewed recent developments of graphene and related nanomaterials along with their preparations, properties, functionalizations, and potential applications.

Laser acceleration of protons using multi-ion plasma gaseous targets

DOE PAGES

Liu, Tung -Chang; Shao, Xi; Liu, Chuan -Sheng; ...

2015-02-01

We present a theoretical and numerical study of a novel acceleration scheme by applying a combination of laser radiation pressure and shielded Coulomb repulsion in laser acceleration of protons in multi-species gaseous targets. By using a circularly polarized CO₂ laser pulse with a wavelength of 10 μm—much greater than that of a Ti: Sapphire laser—the critical density is significantly reduced, and a high-pressure gaseous target can be used to achieve an overdense plasma. This gives us a larger degree of freedom in selecting the target compounds or mixtures, as well as their density and thickness profiles. By impinging such amore » laser beam on a carbon–hydrogen target, the gaseous target is first compressed and accelerated by radiation pressure until the electron layer disrupts, after which the protons are further accelerated by the electron-shielded carbon ion layer. An 80 MeV quasi-monoenergetic proton beam can be generated using a half-sine shaped laser beam with a peak power of 70 TW and a pulse duration of 150 wave periods.« less

Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

NASA Astrophysics Data System (ADS)

Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

2018-01-01

High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

NASA Astrophysics Data System (ADS)

Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

1998-03-01

We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

Polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating

NASA Astrophysics Data System (ADS)

Hohne, Andrew J.; Moon, Benjamin; Baumbauer, Carol L.; Gray, Tristan; Dilts, James; Shaw, Joseph A.; Dickensheets, David L.; Nakagawa, Wataru

2017-08-01

We present the design, fabrication, and characterization of a polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating for use in polarimetric imaging. Gold nanowires were deposited via physical vapor deposition (PVD) onto a silicon surface relief grating that was patterned using electron beam lithography (EBL) and fabricated using standard silicon processing techniques. Optical characterization with a broad-spectrum tungsten halogen light source and a grating spectrometer showed normalized peak TM transmission of 53% with a full-width at half-maximum (FWHM) of 122 nm, which was consistent with rigorous coupled-wave analysis (RCWA) simulations. Simulation results suggested that device operation relied on suppression of the TM transmission caused by surface plasmon polariton (SPP) excitation at the gold-silicon interface and an increase in TM transmission caused by a Fabry-Perot (FP) resonance in the cavity between the gratings. TE rejection occurred at the initial air/gold interface. We also present simulation results of an improved design based on a two-dielectric grating where two different SPP resonances allowed us to improve the shape of the passband by suppressing the side lobes. This newer design resulted in improved side-band performance and increased peak TM transmission.

Particle Detectors and Data Analysis for Cusp Transient Features Campaign

NASA Technical Reports Server (NTRS)

Sharber, James R.

1999-01-01

On December 3, 1997, a rocket payload (36.152) was launched from N(sub y) Alesund into the dark cusp at 0906:00 U (1206:00 LT) during an interval of southward B(sub z) and positive B(sub y). Launch occurred during a time interval of northeastward moving auroral forms observed between 0845 and 0945 UT by ground-based meridian scanning photometers. Ground photometric measurements during the flight show that the payload passed over the poleward portion of the most intense 6300 A emissions of the dayside cusp/cleft region. Electrons of energy up to a few hundred eV were detected immediately upon instrument turn-on at an altitude of 205 km and throughout the flight until the payload reached an altitude of -197 km on the downleg. Electron spectra were either quasithermal with peak energies -100 eV or showed evidence of acceleration along the magnetic field line by potentials of 100-200 V. Precipitating ions were observed throughout much of the flight. Their spectra were broadly peaked in energy with the peak energy decreasing from -500 eV to -250 eV as the payload flew approximately westward over the dayside precipitation region. Structure (spatial or temporal intensity variation) was observed between T + 180 s and T + -400 s. At the rocket altitudes (<450 km) the ions were observed to be precipitating. During the flight, the DMSP F-13 satellite passed through the all-sky imager field-of-view just poleward of the brightest dayside emissions enabling the identification of plasma sheet and boundary layer regions along the orbit. We thus conclude that particle fluxes detected by the rocket flight were either cusp plasma or boundary layer/mantle plasma just poleward of the dayside cusp/cleft. A paper describing the fields and plasmas observed during the flight is now being prepared for publication.

Particle Detectors and Data Analysis for Cusp Transient Features Campaign

NASA Technical Reports Server (NTRS)

Sharber, James R.

1998-01-01

On December 3, 1997, a rocket payload (36.152) was launched from Ny Alesund into the dark cusp at 0906:00 U (1206:00 LT) during an interval of southward B(sub Z), and positive B(sub y). Launch occurred during a time interval of northeastward moving auroral forms observed between 0845 and 0945 UT by ground-based meridian scanning photometers. Ground photometric measurements during the flight show that the payload passed over the poleward portion of the most intense 6300 A emissions of the dayside cusp/cleft region. Electrons of energy up to a few hundred eV were detected immediately upon instrument turn-on at an altitude of 205 km and throughout the flight until the payload reached an altitude of approximately 197 km on the downleg. Electron spectra were either quasithermal with peak energies approximately 100 eV or showed evidence of acceleration along the magnetic field line by potentials of 100-200 V. Precipitating ions were observed throughout much of the flight. Their spectra were broadly peaked in energy with the peak energy decreasing from approximately 500 eV to approximately 250 eV as the payload flew approximately westward over the dayside precipitationregion. Structure(spatial or temporal intensity variation) was observed between T + 180 s and T + approximately 400 s. At the rocket altitudes(less than 450km) the ions were observed to be precipitating. During the flight, the DMSPF-13 satellite passed through the all-sky imager field-of-view just poleward of the brightest dayside emissions enabling the identification of plasma sheet and boundary layer regions along the orbit. We thus conclude that particle fluxes detected by the rocket flight were either cusp plasma or boundary layer/mantle plasmajust poleward of the dayside cusp/cleft. Further investigation of the particle characteristics and their relationship to ionospheric convection patterns is continuing.

Simple color tuning of phosphorescent dendrimer light emitting diodes

NASA Astrophysics Data System (ADS)

Namdas, Ebinazar B.; Anthopoulos, Thomas D.; Samuel, Ifor D. W.; Frampton, Michael J.; Lo, Shih-Chun; Burn, Paul L.

2005-04-01

A simple way of tuning the emission color in solution processed phosphorescent organic light emitting diodes is demonstrated. For each color a single emissive spin-coated layer consisting of a blend of three materials, a fac-tris(2-phenylpyridyl)iridium (III) cored dendrimer (Ir-G1) as the green emitter, a heteroleptic [bis(2-phenylpyridyl)-2-(2'-benzo[4,5-α]thienyl)pyridyl]iridium (III) cored dendrimer [Ir(ppy)2btp] as the red emitter, and 4,4'-bis(N-carbazolyl) biphenyl (CBP) as the host was employed. By adjusting the relative amount of green and red dendrimers in the blends, the color of the light emission was tuned from green to red. High efficiency two layer devices were achieved by evaporating a layer of electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene (TPBI) on top of the spin-coated emissive layer. A brightness of 100cd/m2 was achieved at drive voltages in the range 5.3-7.3 V. The peak external efficiencies at this brightness ranged from 31cd/A(18lm/W) to 7cd/A(4lm/W).

Nanostructured biosensors built by layer-by-layer electrostatic assembly of enzyme-coated single-walled carbon nanotubes and redox polymers.

PubMed

Wang, Youdan; Joshi, Pratixa P; Hobbs, Kevin L; Johnson, Matthew B; Schmidtke, David W

2006-11-07

In this study, we describe the construction of glucose biosensors based on an electrostatic layer-by-layer (LBL) technique. Gold electrodes were initially functionalized with negatively charged 11-mercaptoundecanoic acid followed by alternate immersion in solutions of a positively charged redox polymer, poly[(vinylpyridine)Os(bipyridyl)2Cl(2+/3+)], and a negatively charged enzyme, glucose oxidase (GOX), or a GOX solution containing single-walled carbon nanotubes (SWNTs). The LBL assembly of the multilayer films were characterized by UV-vis spectroscopy, ellipsometry, and cyclic voltammetry, while characterization of the single-walled nanotubes was performed with transmission electron microscopy, Raman spectroscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. When the GOX solution contained single-walled carbon nanotubes (GOX-SWNTs), the oxidation peak currents during cyclic voltammetry increased 1.4-4.0 times, as compared to films without SWNTs. Similarly the glucose electro-oxidation current also increased (6-17 times) when SWNTs were present. By varying the number of multilayers, the sensitivity of the sensors could be controlled.

Active high-power RF switch and pulse compression system

DOEpatents

Tantawi, Sami G.; Ruth, Ronald D.; Zolotorev, Max

1998-01-01

A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

Organic electronic devices with multiple solution-processed layers

DOEpatents

Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

2015-08-04

A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

Electronic Structure of Buried Interfaces - Oral Presentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porter, Zachary

In the electronics behind computer memory storage, the speed and size are dictated by the performance of permanent magnets inside devices called read heads. Complicated magnets made of stacked layers of thin films can be engineered to have properties that yield more energy storage and faster switching times compared to conventional iron or cobalt magnets. The reason is that magnetism is a result of subtle interactions amongst electrons; just how neurons come together on large scales to make cat brains and dog brains, ensembles of electrons interact and become ferromagnets and paramagnets. These interactions make magnets too difficult to studymore » in their entirety, so I focus on the interfaces between layers, which are responsible for the coupling materials physicists hope to exploit to produce next-generation magnets. This project, I study a transition metal oxide material called LSCO, Lanthanum Cobaltite, which can be a paramagnet or a ferromagnet depending on how you tweak the electronic structure. It exhibits an exciting behavior: its sum is greater than the sum of its parts. When another similar material called a LSMO, Lanthanum Manganite, is grown on top of it, their interface has a different type of magnetism from the LSCO or the LSMO! I hope to explain this by demonstrating differently charged ions in the interface. The typical method for quantifying this is x-ray absorption, but all conventional techniques look at every layer simultaneously, averaging the interfaces and the LSCO layers that we want to characterize separately. Instead, I must use a new reflectivity technique, which tracks the intensity of reflected x-rays at different angles, at energies near the absorption peaks of certain elements, to track changes in the electronic structure of the material. The samples were grown by collaborators at the Takamura group at U.C. Davis and probed with this “resonant reflectivity” technique on Beamline 2-1 at the Stanford Synchrotron Radiation Lightsource. This project was funded by the Department of Energy and supported by the SLAC National Accelerator Laboratory. Preliminary results suggest that different ionic charges are indeed responsible for the different magnetic properties at the interface, which is promising because charge is easy to control. Once scientists understand how to tune the magnetic properties of materials like LSCO and LSMO, industries get closer to designing the magnets that will soon revolutionize consumer electronics.« less

The electronic structure of indium arsenide/gallium arsenide self-assembled quantum dots in a high magnetic field

NASA Astrophysics Data System (ADS)

Awirothananon, Sunida

The electronic energy levels of dome-shape InAs self-assembled quantum dots (SAQD) grown by the Stranski-Krastanow mode on GaAs substrates are similar to those obtained from a two-dimensional harmonic-oscillator. A simple selection rule allows transitions only that preserve angular momentum, depicted with atomic-like orbital labels s, p, d, f, etc. This electronic structure was examined with photoluminescence (PL) and photoluminescence excitation (PLE) techniques. As well, in magnetic fields up to 28 Tesla applied parallel to the growth direction, SAQD energy-level degeneracies were lifted. The number of branches observed is correlated to the angular momentum. The ground state (GS) level at zero angular momentum is shifted quadratically under the magnetic field and the behavior could be explained with the Fock-Darwin (F-D) spectral model. The effect of annealing at temperatures from 825°C to 900°C in 25°C steps on the SAQD electronic structure was also examined with the PL technique combined with an applied magnetic field in the Faraday configuration. The PL lines were similar to the F-D spectral lines with their degeneracy lifted by the applied magnetic field. These lines exhibited ten (anti-)crossings: three each at 10 T and 28 T, four at 18 T, while the inter-level spacing and the FWHM were reduced with increasing annealing temperature. Thus an increase in the observed (anti-)crossings resulted for the higher anneal temperatures. The in-plane excitonic reduced-mass was inferred from the systematic splitting of the PL p-branches in a magnetic field. The reduced-mass for all the annealed QD samples was about 0.066 m0 +/- 0.012m0 which decreased slightly with anneal temperature. An 8-band k*p model predicted a similar reduced-mass at low alloying of gallium, but an incorrect trend was observed as the alloying increased with annealing temperature. Unrealistic reduced-masses at 50 percent gallium content were reached. This discrepancy is explained assuming the F-D model is a single (independent) bulk particle picture neglecting many-body effects, and also the k*p model assumes identical disks before and after annealing. The SAQDs were in fact inhomogeneous shallow domes whose height is reduced with annealing temperatures. It is an attempt to reduce the effect of many-body interactions such as exchange, configuration and screened coulomb interactions dominant in the PL technique, the PLE technique was use. In this technique, a single level in a collection or 'ensemble' of dots is excited with tuned laser-light and only the Coulomb interactions are assumed to be important. The PLE peaks were found to be blue-shifted relative to PL peaks. Furthermore, under the influence of a magnetic field, two PLE peaks were observed that corresponded to the p and d energy states. However, three 'd' lines were expected and is hypothesized that one of the d lines remained degenerate. Moreover, the carrier dynamics observed in PLE spectra are much more difficult to interpret than that of the PL spectra. Applying the same method, the analysis of the p-branch peaks suggested an in-plane reduced-mass of ˜0.084m0 +/- 0.002m0, higher than obtained from PL measurement. Since the effective mass is normally associated with the mobility of the carriers, this would imply that the excitons in the PLE measurement are less mobile than in PL. This is despite the reduced many-body effects, suggesting that some extra interactions in the PL excitation may actually enhance the carrier mobility. Given the current interest in devices such as QD infrared photo-detectors and the necessary controls on the number of charge carriers in these devices, a single-layer and 25-layer SAQD samples with doping in the top cap layer were compared to un-doped sample using PLE at various detection energies. No absorption signatures appeared for the doped single layer, whereas they were recovered in the 25-layer doped sample. Evidently either dopants or injected carriers diffused into the QD layers beneath the cap. This diffusion and its influence is expected to be decreasing with depth. Finally, the number of injected charge-carriers in doped GaAs barriers interleaving 50 SAQD layers was studied in order to understand the influence on their electronic structure. From the relation between the dot density and the dopant dose, two to twenty-two charge carriers were estimated to be present in the barriers of each QD. The PLE results indicated that as this number was increased, direct radiative recombination from the higher levels decreased. In addition to Auger scattering and multi-phonon scattering, the enhanced scattering by the dopants impurities appears to add further decay channels toward the lower-energy recombination. This suggests that the PLE technique is sensitive for characterizing the doping effects in SAQD materials. Some fundamental questions regarding the optical and electronic properties of InAs/GaAs SAQD have been answered in this dissertation and the results can be used to support the future development of opto-electronic devices at the nano-scale level.

Changes in the dielectric properties of medaka fish embryos during development, studied by electrorotation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shirakashi, Ryo, E-mail: aa21150@iis.u-tokyo.ac.jp; Mischke, Miriam; Fischer, Peter

2012-11-09

Highlights: Black-Right-Pointing-Pointer Electrorotation offers a non-invasive tool for dielectric analysis of fish embryos. Black-Right-Pointing-Pointer The three-shell dielectric model matches the rotation spectra of medaka eggs. Black-Right-Pointing-Pointer The capacitance value suggests a double-membrane structure of yolk envelope. -- Abstract: The Japanese medaka fish, Oryzias latipes, has become a powerful vertebrate model organism in developmental biology and genetics. The present study explores the dielectric properties of medaka embryos during pre-hatching development by means of the electrorotation (ROT) technique. Due to their layered structure, medaka eggs exhibited up to three ROT peaks in the kHz-MHz frequency range. During development from blastula to earlymore » somite stage, ROT spectra varied only slightly. But as the embryo progressed to the late-somite stage, the ROT peaks underwent significant changes in frequency and amplitude. Using morphological data obtained by light and electron microscopy, we analyzed the ROT spectra with a three-shell dielectric model that accounted for the major embryonic compartments. The analysis yielded a very high value for the ionic conductivity of the egg shell (chorion), which was confirmed by independent osmotic experiments. A relatively low capacitance of the yolk envelope was consistent with its double-membrane structure revealed by transmission electron microscopy. Yolk-free dead eggs exhibited only one co-field ROT peak, shifted markedly to lower frequencies with respect to the corresponding peak of live embryos. The dielectric data may be useful for monitoring the development and changes in fish embryos' viability/conditions in basic research and industrial aquaculture.« less

High efficiency blue and white phosphorescent organic light emitting devices

NASA Astrophysics Data System (ADS)

Eom, Sang-Hyun

Organic light-emitting devices (OLEDs) have important applications in full-color flat-panel displays and as solid-state lighting sources. Achieving high efficiency deep-blue phosphorescent OLEDs (PHOLEDs) is necessary for high performance full-color displays and white light sources with a high color rendering index (CRI); however it is more challenging compared to the longer wavelength light emissions such as green and red due to the higher energy excitations for the deep-blue emitter as well as the weak photopic response of deep-blue emission. This thesis details several effective strategies to enhancing efficiencies of deep-blue PHOLEDs based on iridium(III) bis(4',6'-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6), which are further employed to demonstrate high efficiency white OLEDs by combining the deep-blue emitter with green and red emitters. First, we have employed 1,1-bis-(di-4-tolylaminophenyl) cyclohexane (TAPC) as the hole transporting material to enhance electron and triplet exciton confinement in Fir6-based PHOLEDs, which increased external quantum efficiency up to 18 %. Second, dual-emissive-layer (D-EML) structures consisting of an N,N -dicarbazolyl-3,5-benzene (mCP) layer doped with 4 wt % FIr6 and a p-bis (triphenylsilyly)benzene (UGH2) layer doped with 25 wt % FIr6 was employed to maximize exciton generation in the emissive layer. Combined with the p-i-n device structure, high power efficiencies of (25 +/- 2) lm/W at 100 cd/m2 and (20 +/- 2) lm/W at 1000 cd/m 2 were achieved. Moreover, the peak external quantum efficiency of (20 +/- 1) % was achieved by employing tris[3-(3-pyridyl)mesityl]borane (3TPYMB) as the electron transporting material, which further improves the exciton confinement in the emissive layer. With Cs2CO3 doping in the 3TPYMB layer to greatly increase its electrical conductivity, a peak power efficiency up to (36 +/- 2) lm/W from the deep-blue PHOLED was achieved, which also maintains Commission Internationale de L'Eclairage (CIE) coordinates of (0.16, 0.28). High efficiency white PHOLEDs are also demonstrated by incorporating green and red phosphorescent emitters together with the deep-blue emitter FIr6. Similar to the FIr6-only devices, the D-EML structure with high triplet energy charge transport materials leads to a maximum external quantum efficiency of (19 +/- 1) %. Using the p-i-n device structure, a peak power efficiency of (40 +/- 2) lm/W and (36 +/- 2) lm/W at 100 cd/m2 were achieved, and the white PHOLED possesses a CRI of 79 and CIE coordinates of (0.37, 0.40). The limited light extraction from the planar-type OLEDs is also one of the remaining challenges to the OLED efficiency. Here we have developed a simple soft lithography technique to fabricate a transparent, close-packed hemispherical microlens arrays. The application of such microlens arrays to the glass surface of the large-area fluorescent OLEDs enhanced the light extraction efficiency up to (70 +/- 7)%. It is also shown that the light extraction efficiency of the OLEDs is affected by microlens contact angle, OLEDs size, and detailed layer structure of the OLEDs.

Distribution of electron traps in SiO2/HfO2 nMOSFET

NASA Astrophysics Data System (ADS)

Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

2016-05-01

In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

NASA Astrophysics Data System (ADS)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

Interaction between U/UO2 bilayers and hydrogen studied by in-situ X-ray diffraction

NASA Astrophysics Data System (ADS)

Darnbrough, J. E.; Harker, R. M.; Griffiths, I.; Wermeille, D.; Lander, G. H.; Springell, R.

2018-04-01

This paper reports experiments investigating the reaction of H2 with uranium metal-oxide bilayers. The bilayers consist of ≤ 100 nm of epitaxial α-U (grown on a Nb buffer deposited on sapphire) with a UO2 overlayer of thicknesses of between 20 and 80 nm. The oxides were made either by depositing via reactive magnetron sputtering, or allowing the uranium metal to oxidise in air at room temperature. The bilayers were exposed to hydrogen, with sample temperatures between 80 and 200 C, and monitored via in-situ x-ray diffraction and complimentary experiments conducted using Scanning Transmission Electron Microscopy - Electron Energy Loss Spectroscopy (STEM-EELS). Small partial pressures of H2 caused rapid consumption of the U metal and lead to changes in the intensity and position of the diffraction peaks from both the UO2 overlayers and the U metal. There is an orientational dependence in the rate of U consumption. From changes in the lattice parameter we deduce that hydrogen enters both the oxide and metal layers, contracting the oxide and expanding the metal. The air-grown oxide overlayers appear to hinder the H2-reaction up to a threshold dose, but then on heating from 80 to 140 C the consumption is more rapid than for the as-deposited overlayers. STEM-EELS establishes that the U-hydride layer lies at the oxide-metal interface, and that the initial formation is at defects or grain boundaries, and involves the formation of amorphous and/or nanocrystalline UH3. This explains why no diffraction peaks from UH3 are observed.

Effects of surface morphology of ZnO seed layers on growth of ZnO nanostructures prepared by hydrothermal method and annealing.

PubMed

Yim, Kwang Gug; Kim, Min Su; Leem, Jae-Young

2013-05-01

ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees C for 20 min under an Ar atmosphere. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out at room temperature (RT) to investigate the structural and optical properties of the as-grown and annealed ZnO nanostructures. The surface morphologies of the seed layers changed from a smooth surface to a mountain chain-like structure as the post-heating temperatures increased. The as-grown and annealed ZnO nanostructures exhibited a strong (002) diffraction peak. Compared to the as-grown ZnO nanostructures, the annealed ZnO nanostructures exhibited significantly strong enhancement in the PL intensity ratio by almost a factor of 2.

Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yeongho; Ban, Keun-Yong, E-mail: kban1@asu.edu; Honsberg, Christiana B.

2015-10-26

The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressivemore » strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.« less

Laser shock peening studies on SS316LN plate with various sacrificial layers

NASA Astrophysics Data System (ADS)

Yella, Pardhu; Venkateswarlu, P.; Buddu, Ramesh K.; Vidyasagar, D. V.; Sankara Rao, K. Bhanu; Kiran, P. Prem; Rajulapati, Koteswararao V.

2018-03-01

Laser shock peening (LSP) has been utilized to modify the surface characteristics of SS316LN plates of 6 mm thickness. Laser pulse widths employed are 30 ps and 7 ns and the laser energy was varied in the range 5-90 mJ. Peening was performed in direct ablation mode as well as with various sacrificial layers such as black paint, transparent adhesive tape and absorbing adhesive tape. The surface characteristics were greatly influenced by the type of sacrificial layer employed. The average surface roughness values are about 0.4 μm when the black paint and transparent adhesive tape were used as sacrificial layers. In contrast to this, using absorbent adhesive tape as a sacrificial layer has resulted in an average surface roughness of about 0.04 μm. Irrespective of pulse durations (30 ps or 7 ns), absorbent adhesive tape has always resulted in compressive residual stresses whereas other layers appear to be not that effective. In case of 30 ps pulse, as the laser energy was increased from 5 mJ to 25 mJ, there was a texture observed in (111) reflection of X-ray diffractograms and the center of the peak has also gradually shifted to left. X-ray line profile analysis suggests that with the increase in laser energy, lattice microstrain also has increased. This lattice microstrain appears to be resulting from the increased dislocation density in the peened sample as evidenced during transmission electron microscopic investigations. Cross-sectional scanning electron microscopy performed on peened samples suggests that absorbing adhesive tape brings no surface damage to the samples whereas other sacrificial layers have resulted in some surface damage. Based on all these structural and microstructural details, it is recommended that absorbent tape could be used as a sacrificial layer during LSP process which induces surface residual stresses with no damage to the sample surface.

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan

2015-07-15

GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grownmore » with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.« less

Positron probes of the Ge(1 0 0) surface: The effects of surface reconstructions and electron positron correlations on positron trapping and annihilation characteristics

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Jung, E.; Weiss, A. H.

2007-08-01

Positron annihilation induced Auger electron spectroscopy (PAES) has been applied to study the Ge(1 0 0) surface. The high-resolution PAES spectrum from the Ge(1 0 0) surface displays several strong Auger peaks corresponding to M4,5N1N2,3, M2,3M4,5M4,5, M2,3M4,5V and M1M4,5M4,5 Auger transitions. The integrated peak intensities of Auger transitions are used to obtain experimental annihilation probabilities for the Ge 3d and 3p core level electrons. These experimental results are analyzed by performing calculations of positron surface states and annihilation characteristics of surface trapped positrons with relevant Ge core-level electrons for the non-reconstructed and reconstructed Ge(1 0 0)-p(2 × 1), Ge(1 0 0)-p(2 × 2) and Ge(1 0 0)-c(4 × 2) surfaces. It is found that the positron surface state wave function extends into the Ge lattice in the regions where atoms are displaced from their ideal terminated positions due to reconstructions. Estimates of the positron binding energy and the positron annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of Ge(1 0 0). A comparison with PAES data reveals an agreement with theoretical core annihilation probabilities for the Auger transitions considered.

Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, D. Y., E-mail: cdy7659@126.com; Nanjing University of posts and Telecommunications, Nanjing 210046; Sun, Y.

We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratiomore » (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.« less

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

NASA Astrophysics Data System (ADS)

Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C.; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

2017-02-01

Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.

MAVEN Observations of Dayside Peak Electron Densities in the Ionosphere of Mars

NASA Astrophysics Data System (ADS)

Vogt, M. F.; Withers, P.; Andersson, L.; Mahaffy, P. R.; Benna, M.; Elrod, M. K.; Connerney, J. E. P.; Espley, J. R.; Eparvier, F. G.; Jakosky, B. M.

2016-12-01

The peak electron density in the dayside Martian ionosphere is a valuable diagnostic of the state of the ionosphere. Its dependence on factors like the solar zenith angle, ionizing solar irradiance, neutral scale height, and electron temperature has been well studied. The MAVEN spacecraft's September 2015 "deep dip" orbits, in which the orbital periapsis is lowered to 120 km, provided our first opportunity since Viking to sample in situ a complete dayside electron density profiles including the main peak, and the first observations with contemporaneous comprehensive measurements of the local plasma and magnetic field properties. We have analyzed the peak electron density measurements from the MAVEN deep dip orbits and will discuss their variability with various ionospheric properties, including the proximity to regions of large crustal magnetic fields, and external drivers. We will also present observations of the electron temperature and atmospheric neutral and ion composition at the altitude of the peak electron density.

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Micro solid oxide fuel cell fabricated on porous stainless steel: a new strategy for enhanced thermal cycling ability

PubMed Central

Kim, Kun Joong; Park, Byung Hyun; Kim, Sun Jae; Lee, Younki; Bae, Hongyeul; Choi, Gyeong Man

2016-01-01

Miniaturized solid oxide fuel cells (micro-SOFCs) are being extensively studied as a promising alternative to Li batteries for next generation portable power. A new micro-SOFC is designed and fabricated which shows enhanced thermal robustness by employing oxide-based thin-film electrode and porous stainless steel (STS) substrate. To deposit gas-tight thin-film electrolyte on STS, nano-porous composite oxide is proposed and applied as a new contact layer on STS. The micro-SOFC fabricated on composite oxide- STS dual layer substrate shows the peak power density of 560 mW cm−2 at 550 °C and maintains this power density during rapid thermal cycles. This cell may be suitable for portable electronic device that requires high power-density and fast thermal cycling. PMID:26928921

Micro solid oxide fuel cell fabricated on porous stainless steel: a new strategy for enhanced thermal cycling ability.

PubMed

Kim, Kun Joong; Park, Byung Hyun; Kim, Sun Jae; Lee, Younki; Bae, Hongyeul; Choi, Gyeong Man

2016-03-01

Miniaturized solid oxide fuel cells (micro-SOFCs) are being extensively studied as a promising alternative to Li batteries for next generation portable power. A new micro-SOFC is designed and fabricated which shows enhanced thermal robustness by employing oxide-based thin-film electrode and porous stainless steel (STS) substrate. To deposit gas-tight thin-film electrolyte on STS, nano-porous composite oxide is proposed and applied as a new contact layer on STS. The micro-SOFC fabricated on composite oxide- STS dual layer substrate shows the peak power density of 560 mW cm(-2) at 550 °C and maintains this power density during rapid thermal cycles. This cell may be suitable for portable electronic device that requires high power-density and fast thermal cycling.

Tuning negative differential resistance in single-atomic layer boron-silicon sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Ming-Yue; Liu, Chun-Sheng, E-mail: csliu@njupt.edu.cn, E-mail: yanxh@njupt.edu.cn; Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu

2015-03-21

Using density functional theory and nonequilibrium Green's function formalism for quantum transport calculation, we have quantified the ballistic transport properties along different directions in two-dimensional boron-silicon (B-Si) compounds, as well as the current response to bias voltage. The conductance of the most B-Si devices is higher than the conductance of one-atom-thick boron and silicene. Furthermore, the negative differential resistance phenomenon can be found at certain B-Si stoichiometric composition, and it occurs at various bias voltages. Also, the peak-to-valley ratio is sensitive to the B-Si composition and dependent of the direction considered for B-Si monolayers. The present findings could be helpfulmore » for applications of the single-atomic layer B-Si sheets in the field of semiconductor devices or low-dimensional electronic devices.« less

Influence of Substrate, Additives, and Pulse Parameters on Electrodeposition of Gold Nanoparticles from Potassium Dicyanoaurate

NASA Astrophysics Data System (ADS)

Vahdatkhah, Parisa; Sadrnezhaad, Sayed Khatiboleslam

2015-12-01

Gold nanoparticles (AuNPs) of less than 50 nm diameter were electrodeposited from cyanide solution by pulsating electric current on modified copper and indium tin oxide (ITO) films coated on glass. Morphology, size, and composition of the deposited AuNPs were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscopy. Effects of peak current density, pulse frequency, potassium iodide and cysteine on grain size, and morphology of the AuNPs were determined. Experiments showed that cathode current efficiency increases with the pulse frequency and the iodide ion. Size of the AuNPs increased with the current density. The number of nucleation sites was larger on ITO than on Cu layer; while the average diameter of the crystallites on ITO was smaller than on Cu layer.

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

NASA Astrophysics Data System (ADS)

Zhang, Meng; Bhattacharya, Pallab; Guo, Wei; Banerjee, Animesh

2010-03-01

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 °C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1×1018 cm-3. The corresponding doping efficiency and hole mobility are ˜4.9% and 3.7 cm2/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λpeak=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

Redox properties of undoped 5 nm diamond nanoparticles.

PubMed

Holt, Katherine B; Ziegler, Christoph; Caruana, Daren J; Zang, Jianbing; Millán-Barrios, Enrique J; Hu, Jingping; Foord, John S

2008-01-14

This paper demonstrates the promoting effects of 5 nm undoped detonation diamond nanoparticles on redox reactions in solution. An enhancement in faradaic current for the redox couples Ru(NH(3))(6)(3+/2+) and Fe(CN)(6)(4-/3-) was observed for a gold electrode modified with a drop-coated layer of nanodiamond (ND), in comparison to the bare gold electrode. The ND layer was also found to promote oxygen reduction. Surface modification of the ND powders by heating in air or in a hydrogen flow resulted in oxygenated and hydrogenated forms of the ND, respectively. Oxygenated ND was found to exhibit the greatest electrochemical activity and hydrogenated ND the least. Differential pulse voltammetry of electrode-immobilised ND layers in the absence of solution redox species revealed oxidation and reduction peaks that could be attributed to direct electron transfer (ET) reactions of the ND particles themselves. It is hypothesised that ND consists of an insulating sp(3) diamond core with a surface that has significant delocalised pi character due to unsatisfied surface atoms and C[double bond, length as m-dash]O bond formation. At the nanoscale surface properties of the particles dominate over those of the bulk, allowing ET to occur between these essentially insulating particles and a redox species in solution or an underlying electrode. We speculate that reversible reduction of the ND may occur via electron injection into available surface states at well-defined reduction potentials and allow the ND particles to act as a source and sink of electrons for the promotion of solution redox reactions.

Fine Structure in the Secondary Electron Emission Peak for Diamond Crystal with (100) Negative Electron Affinity Surface

NASA Technical Reports Server (NTRS)

Asnin, V. M.; Krainsky, I. L.

1998-01-01

A fine structure was discovered in the low-energy peak of the secondary electron emission spectra of the diamond surface with negative electron affinity. We studied this structure for the (100) surface of the natural type-IIb diamond crystal. We have found that the low-energy peak consists of a total of four maxima. The relative energy positions of three of them could be related to the electron energy minima near the bottom of the conduction band. The fourth peak, having the lowest energy, was attributed to the breakup of the bulk exciton at the surface during the process of secondary electron emission.

Mapping low-frequency carbon radio recombination lines towards Cassiopeia A at 340, 148, 54, and 43 MHz

NASA Astrophysics Data System (ADS)

Salas, P.; Oonk, J. B. R.; van Weeren, R. J.; Wolfire, M. G.; Emig, K. L.; Toribio, M. C.; Röttgering, H. J. A.; Tielens, A. G. G. M.

2018-04-01

Quantitative understanding of the interstellar medium requires knowledge of its physical conditions. Low-frequency carbon radio recombination lines (CRRLs) trace cold interstellar gas and can be used to determine its physical conditions (e.g. electron temperature and density). In this work, we present spatially resolved observations of the low-frequency (≤390 MHz) CRRLs centred around C268α, C357α, C494α, and C539α towards Cassiopeia A on scales of ≤1.2 pc. We compare the spatial distribution of CRRLs with other interstellar medium tracers. This comparison reveals a spatial offset between the peak of the CRRLs and other tracers, which is very characteristic for photodissociation regions and that we take as evidence for CRRLs being preferentially detected from the surfaces of molecular clouds. Using the CRRLs, we constrain the gas electron temperature and density. These constraints on the gas conditions suggest variations of less than a factor of 2 in pressure over ˜1 pc scales, and an average hydrogen density of 200-470 cm-3. From the electron temperature and density maps, we also constrain the ionized carbon emission measure, column density, and path length. Based on these, the hydrogen column density is larger than 1022 cm-2, with a peak of ˜4 × 1022 cm-2 towards the south of Cassiopeia A. Towards the southern peak, the line-of-sight length is ˜40 pc over a ˜2 pc wide structure, which implies that the gas is a thin surface layer on a large (molecular) cloud that is only partially intersected by Cassiopeia A. These observations highlight the utility of CRRLs as tracers of low-density extended H I and CO-dark gas halo's around molecular clouds.

Statistical behavior of the longitudinal variations of daytime electron density in the topside ionosphere at middle latitudes

NASA Astrophysics Data System (ADS)

Su, Fanfan; Wang, Wenbin; Burns, Alan G.; Yue, Xinan; Zhu, Fuying; Lin, Jian

2016-11-01

Electron density in the topside ionosphere has significant variations with latitude, longitude, altitude, local time, season, and solar cycle. This paper focuses on the global and seasonal features of longitudinal structures of daytime topside electron density (Ne) at middle latitudes and their possible causes. We used in situ Ne measured by DEMETER and F2 layer peak height (hmF2) and peak density (NmF2) from COSMIC. The longitudinal variations of the daytime topside Ne show a wave number 2-type structure in the Northern Hemisphere, whereas those in the Southern Hemisphere are dominated by a wave number 1 structure and are much larger than those in the Northern Hemisphere. The patterns around December solstice (DS) in the Northern Hemisphere (winter) are different from other seasons, whereas the patterns in the Southern Hemisphere are similar in each season. Around March equinox (ME), June solstice (JS), and September equinox (SE) in the Northern Hemisphere and around ME, SE, and DS in the Southern Hemisphere, the longitudinal variations of topside Ne have similar patterns to hmF2. Around JS in the Southern Hemisphere (winter), the topside Ne has similar patterns to NmF2 and hmF2 does not change much with longitude. Thus, the topside variations may be explained intuitively in terms of hmF2 and NmF2. This approach works reasonably well in most of the situations except in the northern winter in the topside not too far from the F2 peak. In this sense, understanding variations in hmF2 and NmF2 becomes an important and relevant subject for this topside ionospheric study.

Optical properties of InN thin films

NASA Astrophysics Data System (ADS)

Malakhov, Vladislav Y.

2000-04-01

The basic optical properties of low temperature plasma enhanced chemical reactionary sputtered (PECRS) InN thin films are presented. Optical absorption and reflectance spectra of InN polycrystalline films at room temperature in visible and near infrared (NIR) regions were taken to determine direct band gap energy (2.03 eV), electron plasma resonances energy (0.6 eV), damping constant (0.18 eV), and optical effective mass of electrons (0.11). In addition the UV and visible reflectance spectra have been used to reproduce accurately dielectric function of wurtzite InN for assignments of the peak structures to interband transitions (1.5 - 12.0 eV) as well as to determine dielectric constant (9.3) and refractive index (>3.0). The revealed reflectance peaks at 485 and 590 cm-1 respectively in IR spectra are connected with TO and LO optical vibration modes of InN films. Some TO (485 cm-1) and LO (585 cm-1) phonon features of indium nitride polycrystalline films on ceramics were observed in Raman spectra and also discussed. The excellent possibilities of InN polycrystalline layers for potential application in optoelectronic devices such as LEDs based InGaAlN and high efficiency solar cells are confirmed.

A large-area diffuse air discharge plasma excited by nanosecond pulse under a double hexagon needle-array electrode.

PubMed

Liu, Zhi-Jie; Wang, Wen-Chun; Yang, De-Zheng; Wang, Sen; Zhang, Shuai; Tang, Kai; Jiang, Peng-Chao

2014-01-01

A large-area diffuse air discharge plasma excited by bipolar nanosecond pulse is generated under a double hexagon needle-array electrode at atmospheric pressure. The images of the diffuse discharge, electric characteristics, and the optical emission spectra emitted from the diffuse air discharge plasma are obtained. Based on the waveforms of pulse voltage and current, the power consumption, and the power density of the diffuse air discharge plasma are investigated under different pulse peak voltages. The electron density and the electron temperature of the diffuse plasma are estimated to be approximately 1.42×10(11) cm(-3) and 4.4 eV, respectively. The optical emission spectra are arranged to determine the rotational and vibrational temperatures by comparing experimental with simulated spectra. Meanwhile, the rotational and vibrational temperatures of the diffuse discharge plasma are also discussed under different pulse peak voltages and pulse repetition rates, respectively. In addition, the diffuse air discharge plasma can form an area of about 70×50 mm(2) on the surface of dielectric layer and can be scaled up to the required size. Crown Copyright © 2013. Published by Elsevier B.V. All rights reserved.

Fatigue damage monitoring for basalt fiber reinforced polymer composites using acoustic emission technique

NASA Astrophysics Data System (ADS)

Wang, Wentao; Li, Hui; Qu, Zhi

2012-04-01

Basalt fiber reinforced polymer (BFRP) is a structural material with superior mechanical properties. In this study, unidirectional BFRP laminates with 14 layers are made with the hand lay-up method. Then, the acoustic emission technique (AE) combined with the scanning electronic microscope (SEM) technique is employed to monitor the fatigue damage evolution of the BFRP plates in the fatigue loading tests. Time-frequency analysis using the wavelet transform technique is proposed to analyze the received AE signal instead of the peak frequency method. A comparison between AE signals and SEM images indicates that the multi-frequency peaks picked from the time-frequency curves of AE signals reflect the accumulated fatigue damage evolution and fatigue damage patterns. Furthermore, seven damage patterns, that is, matrix cracking, delamination, fiber fracture and their combinations, are identified from the time-frequency curves of the AE signals.

Study of a micro chamber quadrupole mass spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Jinchan; Zhang Xiaobing; Mao Fuming

The design of a micro chamber quadrupole mass spectrometer (MCQMS) having a small total volume of only 20 cm{sup 3}, including Faraday cup ion detector and ion source, is described. This MCQMS can resist a vacuum baking temperature of 400-500 deg. C. The quadrupole elements with a hyperbolic surface are made of a ceramic material and coated with a thin metal layer. The quadrupole mass filter has a field radius of 3 mm and a length of 100 mm. Prototypes of this new MCQMS can detect a minimum partial pressure of 10{sup -8} Pa, have a peak width of {delta}M=1more » at 10% peak height from mass number 1 to 60, and show an excellent long-term stability. The new MCQMS is intended to be used in residual gas analyses of electron devices during a mutual pumping and baking process.« less

Explanation of the photocurrent generation of Cu2O quantum dots (QDs) sensitized p-CuSCN stable photoelectrochemical cells

NASA Astrophysics Data System (ADS)

Karunarathna, P. G. D. C. K.; Samarakoon, S. P. A. U. K.; Fernando, C. A. N.

2018-01-01

Fabrication of Cu2O quantum dots (QDs) sensitized p-CuSCN photoelectrode provides a significant photocurrent enhancement in photoelectrochemical medium for the first time. The variation of photocurrent quantum efficiency (Ф%) with Cu2O amount formed on p-CuSCN was presented. Here, two maxima of photocurrent could be observed in Cu/p-CuSCN/Cu2O photoelectrodes. The first photocurrent peak was due to the Cu2O QDs sensitization on p-CuSCN layer, and the second photocurrent peak was due to the formation of p-n junction. Time development of the photocurrent for Cu/p-CuSCN/n-Cu2O photoelectrodes and material characterization from Fourier transform infrared (FTIR) spectra, scanning electron microscope (SEM) images, energy dispersive x-ray spectroscopy (EDX) and x-ray diffraction (XRD) were done in this study in detailed.

Superstructures and Electronic Properties of Manganese-Phthalocyanine Molecules on Au(110) from Submonolayer Coverage to Ultrathin Molecular Films.

PubMed

Topyła, M; Néel, N; Kröger, J

2016-07-12

The adsorption of manganese-phthalocyanine molecules on Au(110) was investigated using a low-temperature scanning tunneling microscope. A rich variety of commensurate superstructures was observed upon increasing the molecule coverage from submonolayers to ultrathin films. All structures were associated with reconstructions of the Au(110) substrate. Molecules adsorbed in the second molecular layer exhibited negative differential conductance occurring symmetrically around zero bias voltage. A double-barrier tunneling model rationalized this observation in terms of a peaked molecular resonance at the Fermi energy together with a voltage drop across the molecular film.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

NASA Astrophysics Data System (ADS)

Lin, Jianliang; Chistyakov, Roman

2017-02-01

Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

Numerical study on exciton transport and light emission for organic light emitting diodes with an emission layer.

PubMed

Kim, K S; Hwang, Y W; Won, T Y

2013-12-01

This paper reports the results of a numerical study on carrier injection and exciton transport in an organic light emitting diode (OLED) structure based on tris (8-hydroxyquinolinato) aluminum (Alq3). Because charge accumulation at the interfaces between the emission layer (EML) and transport layer are believed to increase the recombination rate, which also increases the exciton density, a numerical study was performed on the effect of inserting an EML in the bilayer structure. In the first case considered, the lowest unoccupied molecular orbital (LUMO) of the EML was aligned with the LUMO of the hole transport layer (HTL), whereas the highest occupied molecular orbital (HOMO) of the EML was aligned with the HOMO of the electron transport layer (ETL). In the second case, the LUMO of the EML was aligned with the LUMO of the ETL and the HOMO of the EML was aligned with the HOMO of the HTL. In case of a charge-blocking device, most of the recombination appeared to occur at both edges of the EML because the electric field exhibited a peak in these areas. On the other hand, in the case of the charge-confining device, the electric field was confined at the interface between the EML and ETL. This paper also discussed the effect of the insertion of a doping layer as transport layer.

Total absorption peak by use of a rigid frame porous layer backed by a rigid multi-irregularities grating.

PubMed

Groby, J-P; Lauriks, W; Vigran, T E

2010-05-01

The acoustic properties of a low resistivity porous layer backed by a rigid plate containing periodic rectangular irregularities, creating a multicomponent diffraction gratings, are investigated. Numerical and experimental results show that the structure possesses a total absorption peak at the frequency of the modified mode of the layer, when designed as proposed in the article. These results are explained by an analysis of the acoustic response of the whole structure and especially by the modal analysis of the configuration. When more than one irregularity per spatial period is considered, additional higher frequency peaks are observed.

Profiles of Ionospheric Storm-enhanced Density during the 17 March 2015 Great Storm

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, W.; Burns, A. G.; Yue, X.; Zhang, S.; Zhang, Y.

2015-12-01

Ionospheric F2 region peak densities (NmF2) are expected to show a positive phase correlation with total electron content (TEC), and electron density is expected to have an anti-correlation with electron temperature near the ionospheric F2 peak. However, we show that, during the 17 March 2015 great storm, TEC and F2 region electron density peak height (hmF2) over Millstone Hill increased, but the F2 region electron density peak (NmF2) decreased significantly during the storm-enhanced density (SED) phase of the storm compared with the quiet-time ionosphere. This SED occurred where there was a negative ionospheric storm near the F2 peak and below it. The weak ionosphere below the F2 peak resulted in much reduced downward heat conduction for the electrons, trapping the heat in the topside. This, in turn, increased the topside scale height, so that, even though electron densities at the F2 peak were depleted, TEC increased in the SED. The depletion in NmF2 was probably caused by an increase in the density of the molecular neutrals, resulting in enhanced recombination. In addition, the storm-time topside ionospheric electron density profile was much closer to diffusive equilibrium than non-storm time profile because of less daytime plasma flow from the ionosphere to the plasmasphere.

Mechanisms of Loss in Internal Quantum Efficiency in III-Nitride-based Blue-and Green-Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Huang, Li

The overarching goals of the research conducted for this dissertation have been to understand the scientific reasons for the losses in the internal quantum efficiency (IQE) in Group III-nitride-based blue and especially green light-emitting diodes (LEDs) containing a multi-quantum well (MQW) active region and to simultaneously develop LED epitaxial structures to ameliorate these losses. The p-type AlGaN EBL was determined to be both mandatory and effective in the prevention of electron overflow from the MQW region into the p-type cladding layer and the resultant lowering of the IQE. The overflow phenomenon was partially due to the low concentration (˜ 5 x 1017 cm-3) and mobility (˜ 10 cm2/(V•s)) of the holes injected into the active region. Electroluminescence (EL) studies of LEDs without an EBL revealed a dominant emission from donor-acceptor pair recombination in the p-type GaN layer. The incorporation of a 90 nm compositionally graded In0-0.1 Ga1-0.9N buffer layer between each MQW and n-GaN cladding layer grown on an Al/SiC substrate resulted in an increase in the luminescence intensity and a blue-shift in the emission wavelength, as observed in photoluminescence (PL) spectra. The graded InGaN buffer layer reduced the stress and thus the piezoelectric field across the MQW; this improved the electron/hole overlap that, in turn, resulted in an enhanced radiative recombination rate and an increase in efficiency. A direct correlation was observed between an increase in the IQE measured in temperature-dependent PL (TDPL) and an increase in the roughness of all the upper InGaN QW/GaN barrier interfaces, as determined using cross-sectional transmission electron microscopy of the MQW. These results agreed in general with the average surface roughness values of the pit-free region on the top GaN barrier determined via atomic force microscopy and the average roughness values of all the interfaces in the MQW calculated from the FWHM of the emission peak in the PL spectra acquired at 10 K for LED structures grown on both SiC and GaN substrates. This improvement occurred as a result of carrier localization at the rougher interfaces that, in turn, resulted in shorter carrier lifetimes and faster decay rates, as determined using time-resolved PL. The peak current densities determined from the curves of external quantum efficiency as a function of current density calculated from EL spectra acquired from a set of LEDs having 3 QWs, 5 QWs, and 6 QWs were 63 A/cm2, 78 A/cm2 and 78 A/cm2, respectively. These data indicated that the minority carrier (holes) in our powered devices penetrated into at least the 4th QW from the top p-type cladding layer. The peak emission from these LEDs occurred at 522 nm. The hole density decreased with distance away from the top p-type layer. Finally, a new process route was developed in this research for the epitaxial deposition of GaN(0001) thin films on chemo-mechanically polished GaN(0001) substrates. The latter possessed threading dislocations (TDs) having a density of the order of 5 x 107 cm-2, predominantly edge in character and oriented along [0001]. Step-flow-controlled growth of the films was achieved; thus, no additional TDs were generated at the film/substrate interface. The density of V-defects in InGaN films and in subsequently grown MQWs containing In0.26Ga0.74N wells grown on the GaN substrates was also reduced to within an order of 107 cm -2. The density of the latter defects was determined to be a function of both the density of the TDs and the growth temperature when the latter was > 900 °C. (Abstract shortened by UMI.)

Unusual ZFC and FC magnetic behavior in thin Co multi-layered structure

NASA Astrophysics Data System (ADS)

Ben Dor, Oren; Yochelis, Shira; Felner, Israel; Paltiel, Yossi

2017-04-01

The observation of unusual magnetic phenomena in a Ni -based magnetic memory device ([4] O. Ben-Dor et al., 2013) encouraged us to conduct a systematic research on Co based multi-layered structure which contains a α-helix L polyalanine (AHPA-L) organic compound. The constant Co thickness is 7 nm and AHPA-L was also replaced by non-chiral 1-Decanethiol organic molecules. Both organic compounds were chemisorbed on gold by a thiol group. The dc magnetic field (H) was applied parallel and perpendicular to the surface layers. The perpendicular direction is the easy magnetization axis and along this orientation only, the zero-field-cooled (ZFC) plots exhibit a pronounced peak around 55-58 K. This peak is suppressed in the second ZFC and field-cooled (FC) runs performed shortly after the virgin ZFC one. Thus, around the peak position ZFC>FC a phenomenon seldom observed. This peak reappears after measuring the same material six months later. This behavior appears in layers with the non-chiral 1-Decanethiol and it is very similar to that obtained in sulfur doped amorphous carbon. The peak origin and the peculiar ZFC>FC case are qualitatively explained.

Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50%

NASA Astrophysics Data System (ADS)

Lee, JaeWon; Tak, Youngjo; Kim, Jun-Youn; Hong, Hyun-Gi; Chae, Suhee; Min, Bokki; Jeong, Hyungsu; Yoo, Jinwoo; Kim, Jong-Ryeol; Park, Youngsoo

2011-01-01

GaN-based light-emitting-diodes (LEDs) on (1 1 1) Si substrates with internal quantum efficiency (IQE) exceeding 50% have been successfully grown by metal organic vapor phase epitaxy (MOVPE). 3.5 μm thick crack-free GaN epitaxial layers were grown on the Si substrates by the re-growth method on patterned templates. Series of step-graded Al xGa 1- xN epitaxial layers were used as the buffer layers to compensate thermal tensile stresses produced during the post-growth cooling process as well as to reduce the density of threading dislocations (TDs) generated due to the lattice mismatches between III-nitride layers and the silicon substrates. The light-emitting region consisted of 1.8 μm thick n-GaN, 3 periods of InGaN/GaN superlattice, InGaN/GaN multiple quantum wells (MQWs) designed for a peak wavelength of about 455 nm, an electron blocking layer (EBL), and p-GaN. The full-widths at half-maximum (FWHM) of (0 0 0 2) and (1 0 -1 2) ω-rocking curves of the GaN epitaxial layers were 410 and 560 arcsec, respectively. Cross-sectional transmission electron microscopy (TEM) investigation revealed that the propagation of the threading dislocations was mostly limited to the interface between the last Al xGa 1- xN buffer and n-GaN layers. The density of the threading dislocations induced pits of n-GaN, as estimated by atomic force microscopy (AFM), was about 5.5×10 8 cm -2. Temperature dependent photoluminescence (PL) measurements with a relative intensity integration method were carried out to estimate the internal quantum efficiency (IQE) of the light-emitting structures grown on Si, which reached up to 55%.

On the Properties and Design of Organic Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Erickson, Nicholas C.

Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

Effect of Sn Composition in Ge1- x Sn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Kil, Yeon-Ho; Kang, Sukill; Jeong, Tae Soo; Shim, Kyu-Hwan; Kim, Dae-Jung; Choi, Yong-Dae; Kim, Mi Joung; Kim, Taek Sung

2018-05-01

The Ge1- x Sn x layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up to x = 0.83%. In order to obtain effect of the Sn composition on the structural and the optical characteristics, we utilized highresolution X-ray diffraction (HR-XRD), etch pit density (EPD), atomic force microscopy (AFM), Raman spectroscopy, and photocurrent (PC) spectra. The Sn compositions in the Ge1- x Sn x layers were found to be of x = 0.00%, 0.51%, 0.65%, and 0.83%. The root-mean-square (RMS) of the surface roughness of the Ge1- x Sn x layer increased from 2.02 nm to 3.40 nm as the Sn composition was increased from 0.51% to 0.83%, and EPD was on the order of 108 cm-2. The Raman spectra consist of only one strong peak near 300 cm-1, which is assigned to the Ge-Ge LO peaks and the Raman peaks shift to the wave number with increasing Sn composition. Photocurrent spectra show near energy band gap peaks and their peak energies decrease with increasing Sn composition due to band-gap bowing in the Ge1- x Sn x layer. An increase in the band gap bowing parameter was observed with increasing Sn composition.

Unusual surface and edge morphologies, sp2 to sp3 hybridized transformation and electronic damage after Ar+ ion irradiation of few-layer graphene surfaces.

PubMed

Al-Harthi, Salim Hamood; Elzain, Mohammed; Al-Barwani, Muataz; Kora'a, Amal; Hysen, Thomas; Myint, Myo Tay Zar; Anantharaman, Maliemadom Ramaswamy

2012-08-19

Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energies were investigated using X-ray photoemission spectroscopy (XPS) and atomic force microscopy techniques. The results provide direct experimental evidence of ripple formation, sp2 to sp3 hybridized carbon transformation, electronic damage, Ar+ implantation, unusual defects and edge reconstructions in FLG, which depend on the irradiation energy. In addition, shadowing effects similar to those found in oblique-angle growth of thin films were seen. Reliable quantification of the transition from the sp2-bonding to sp3-hybridized state as a result of Ar+ ion irradiation is achieved from the deconvolution of the XPS C (1s) peak. Although the ion irradiation effect is demonstrated through the shape of the derivative of the Auger transition C KVV spectra, we show that the D parameter values obtained from these spectra which are normally used in the literature fail to account for the sp2 to sp3 hybridization transition. In contrast to what is known, it is revealed that using ion irradiation at large FLG sample tilt angles can lead to edge reconstructions. Furthermore, FLG irradiation by low energy of 0.25 keV can be a plausible way of peeling graphene layers without the need of Joule heating reported previously.

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4

NASA Astrophysics Data System (ADS)

Teixeira, J. P.; Sousa, R. A.; Sousa, M. G.; da Cunha, A. F.; Fernandes, P. A.; Salomé, P. M. P.; Leitão, J. P.

2014-12-01

The theoretical models of radiative recombinations in both CuIn1 -xGaxSe2 chalcopyrite and Cu2ZnSnS4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu2ZnSnS4-based solar cells in which the absorber layer was grown through sulphurization of multiperiod structures of precursor layers. For both samples the luminescence is dominated by an asymmetric band with peak energy at ˜1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ˜60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of ˜280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed.

Study of positron annihilation with core electrons at the clean and oxygen covered Ag(001) surface

NASA Astrophysics Data System (ADS)

Joglekar, P.; Shastry, K.; Olenga, A.; Fazleev, N. G.; Weiss, A. H.

2013-03-01

In this paper we present measurements of the energy spectrum of electrons emitted as a result of Positron Annihilation Induce Auger Electron Emission from a clean and oxygen covered Ag (100) surface using a series of incident beam energies ranging from 20 eV down to 2 eV. A peak was observed at ~ 40 eV corresponding to the N23VV Auger transition in agreement with previous PAES studies. Experimental results were investigated theoretically by calculations of positron states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the clean and oxygen covered Ag(100) surface. An ab-initio investigation of stability and associated electronic properties of different adsorption phases of oxygen on Ag(100) has been performed on the basis of density functional theory and using DMOl3 code. The computed positron binding energy, positron surface state wave function, and positron annihilation probabilities of surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, elemental content, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data. This work was supported in part by the National Science Foundation Grant # DMR-0907679.

Extensive electron transport and energization via multiple, localized dipolarizing flux bundles

NASA Astrophysics Data System (ADS)

Gabrielse, Christine; Angelopoulos, Vassilis; Harris, Camilla; Artemyev, Anton; Kepko, Larry; Runov, Andrei

2017-05-01

Using an analytical model of multiple dipolarizing flux bundles (DFBs) embedded in earthward traveling bursty bulk flows, we demonstrate how equatorially mirroring electrons can travel long distances and gain hundreds of keV from betatron acceleration. The model parameters are constrained by four Time History of Events and Macroscale Interactions during Substorms satellite observations, putting limits on the DFBs' speed, location, and magnetic and electric field magnitudes. We find that the sharp, localized peaks in magnetic field have such strong spatial gradients that energetic electrons ∇B drift in closed paths around the peaks as those peaks travel earthward. This is understood in terms of the third adiabatic invariant, which remains constant when the field changes on timescales longer than the electron's drift timescale: An energetic electron encircles a sharp peak in magnetic field in a closed path subtending an area of approximately constant flux. As the flux bundle magnetic field increases the electron's drift path area shrinks and the electron is prevented from escaping to the ambient plasma sheet, while it continues to gain energy via betatron acceleration. When the flux bundles arrive at and merge with the inner magnetosphere, where the background field is strong, the electrons suddenly gain access to previously closed drift paths around the Earth. DFBs are therefore instrumental in transporting and energizing energetic electrons over long distances along the magnetotail, bringing them to the inner magnetosphere and energizing them by hundreds of keV.