Enhanced thermoelectric properties in bulk nanowire heterostructure-based nanocomposites through minority carrier blocking.

PubMed

Yang, Haoran; Bahk, Je-Hyeong; Day, Tristan; Mohammed, Amr M S; Snyder, G Jeffrey; Shakouri, Ali; Wu, Yue

2015-02-11

To design superior thermoelectric materials the minority carrier blocking effect in which the unwanted bipolar transport is prevented by the interfacial energy barriers in the heterogeneous nanostructures has been theoretically proposed recently. The theory predicts an enhanced power factor and a reduced bipolar thermal conductivity for materials with a relatively low doping level, which could lead to an improvement in the thermoelectric figure of merit (ZT). Here we show the first experimental demonstration of the minority carrier blocking in lead telluride-silver telluride (PbTe-Ag2Te) nanowire heterostructure-based nanocomposites. The nanocomposites are made by sintering PbTe-Ag2Te nanowire heterostructures produced in a highly scalable solution-phase synthesis. Compared with Ag2Te nanowire-based nanocomposite produced in similar method, the PbTe-Ag2Te nanocomposite containing ∼5 atomic % PbTe exhibits enhanced Seebeck coefficient, reduced thermal conductivity, and ∼40% improved ZT, which can be well explained by the theoretical modeling based on the Boltzmann transport equations when energy barriers for both electrons and holes at the heterostructure interfaces are considered in the calculations. For this p-type PbTe-Ag2Te nanocomposite, the barriers for electrons, that is, minority carriers, are primarily responsible for the ZT enhancement. By extending this approach to other nanostructured systems, it represents a key step toward low-cost solution-processable nanomaterials without heavy doping level for high-performance thermoelectric energy harvesting.

Thermoelectric Properties of Topological Crystalline Insulator Nanowires

NASA Astrophysics Data System (ADS)

Xu, Enzhi

Bulk lead telluride (PbTe) and its alloy compounds are well-known thermoelectric materials for electric power generation. Tin telluride (SnTe) which has the same rock-salt crystalline structure as PbTe has recently been demonstrated to host unique topological surface states that may favor improved thermoelectric properties. In this thesis work, we studied the thermoelectric properties of single-crystalline nanowires of the SnTe family compounds, i.e. undoped SnTe, PbTe, (Sn,Pb)Te alloy, and In-doped SnTe, all of which were grown by a vapor transport approach. We measured the thermopower S, electrical conductivity sigma and thermal conductivity kappa on each individual nanowire over a temperature range of 25 - 300 K, from which the thermoelectric figures of merit ZTs were determined. In comparison to PbTe nanowires, SnTe and (Sn,Pb)Te has lower thermopower but significantly higher electrical conductivity. Both SnTe and (Sn,Pb)Te nanowires showed enhanced thermopower and suppressed thermal conductivity, compared to their bulk counterparts. The enhancement of thermopower may result from the existence of topological surface states, while the suppression of thermal conductivity may relate to the increased phonon-surface scattering in nanowires. Moreover, indium doping suppresses both electrical and thermal conductivities but enhances thermopower, yielding an improved figure of merit ZT. Our results highlight nanostructuring in combination with alloying or doping as an important approach to enhancing thermoelectric properties. In spite of excellent thermoelectric properties and robust topological surface states, we found that the nanowire surface is subject to fast oxidation. In particular, we demonstrated that exposure of In-doped SnTe nanowires to air leads to surface oxidation within only one minute. Transmission electron microscopy characterization suggests the amorphous nature of the surface, and X-ray photoelectron spectroscopy studies identify the oxide species on nanowire surface. We further developed an effective approach to removing surface oxides by means of argon ion sputtering.

Thermoelctric Properties of Bi and Bismuth Telluride Composites

NASA Astrophysics Data System (ADS)

Huber, Tito E.; Calcao, Ricky

1998-03-01

It has been suggested that microengineering traditional thermoelectric materials into composites may leadto asignificant improvement in their thermoelectric performance. One approach for the fabrication of nanostructured materials is the utilization of nanochannel insulators as a matrix for the synthesis of dense composites using high pressure injection of the melt. We will discuss the synthesis and structural properties of oriented Bi and Bismuth Telluride wire arrays prepared with this technique. Funded by the Army Research Office.

Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Lee, Kunik (Inventor); Kim, Hyun-Jung (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor)

2014-01-01

Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

Thermoelectric properties of rare earth chalcogenides

NASA Technical Reports Server (NTRS)

Danielson, L. R.; Raag, V.; Wood, C.

1985-01-01

The rare earth chalcogenides are important thermoelectric materials due to their high melting points, self-doping capabilities, and low thermal conductivities. Lanthanum sulfides and lanthanum tellurides have been synthesized in quartz ampules, hot-pressed into samples, and measured. The n-type Seebeck coefficients, electrical resistivities, and power factors generally all increased as the temperature increased from 200 to 1000 C. The figure-of-merit for nonstoichiometric lanthanum telluride was 0.001/deg C at 1000 C, considerably higher than for silicon-germanium. Thermoelectric measurements were made for LaTe(2) and YbS(1.4), and p-type behavior was observed for these compounds from 300 to 1100 C.

Advanced Soldier Thermoelectric Power System for Power Generation from Battlefield Heat Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendricks, Terry J.; Hogan, Tim; Case, Eldon D.

2010-09-01

The U.S. military uses large amounts of fuel during deployments and battlefield operations. This project sought to develop a lightweight, small form-factor, soldier-portable advanced thermoelectric (TE) system prototype to recover and convert waste heat from various deployed military equipment (i.e., diesel generators/engines, incinerators, vehicles, and potentially mobile kitchens), with the ultimate purpose of producing power for soldier battery charging, advanced capacitor charging, and other battlefield power applications. The technical approach employed microchannel technology, a unique “power panel” approach to heat exchange/TE system integration, and newly-characterized LAST (lead-antimony-silver-telluride) and LASTT (lead-antimony-silver-tin-telluride) TE materials segmented with bismuth telluride TE materials in designingmore » a segmented-element TE power module and system. This project researched never-before-addressed system integration challenges (thermal expansion, thermal diffusion, electrical interconnection, thermal and electrical interfaces) of designing thin “power panels” consisting of alternating layers of thin, microchannel heat exchangers (hot and cold) sandwiching thin, segmented-element TE power generators. The TE properties, structurally properties, and thermal fatigue behavior of LAST and LASTT materials were developed and characterized such that the first segmented-element TE modules using LAST / LASTT materials were fabricated and tested at hot-side temperatures = 400 °C and cold-side temperatures = 40 °C. LAST / LASTT materials were successfully segmented with bismuth telluride and electrically interconnected with diffusion barrier materials and copper strapping within the module electrical circuit. A TE system design was developed to produce 1.5-1.6 kW of electrical energy using these new TE modules from the exhaust waste heat of 60-kW Tactical Quiet Generators as demonstration vehicles.« less

Effect of ball milling time on thermoelectric properties of bismuth telluride nanomaterials

NASA Astrophysics Data System (ADS)

Khade, Poonam; Bagwaiya, Toshi; Bhattacharaya, Shovit; Singh, Ajay; Jha, Purushottam; Shelke, Vilas

2018-04-01

The effect of different milling time on thermoelectric properties of bismuth telluride (Bi2Te3) was investigated. The nanomaterial was prepared by varying the ball milling time and followed by hot press sintering. The crystal structure and phase formation were verified by X-ray diffraction and Raman Spectroscopy. The experimental results show that electrical conductivity increases whereas thermal conductivity decreases with increasing milling time. The negative sign of seebeck coefficient indicate the n-type nature with majority charge carriers of electrons. A maximum figure of merit about 0.55 is achieved for l5hr ball milled Bi2Te3 sample. The present study demonstrates the simple and cost-effective method for synthesis of Bi2Te3 thermoelectric material at large scale thermoelectric applications.

Investigation of Thermoelectric Parameters of Bi2Te3: TEGs Assembled using Pressure-Assisted Silver Powder Sintering-Based Joining Technology

NASA Astrophysics Data System (ADS)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2015-06-01

Operation of thermoelectric generator (TEG) modules based on bismuth telluride alloys at temperatures higher than 250°C is mostly limited by the melting point of the assembly solder. Although the thermoelectric parameters of bismuth telluride materials degrade for temperatures >130°C, the power output of the module can be enhanced with an increase in the temperature difference. For this, a temperature-stable joining technique, especially for the hot side of the modules, is required. Fabrication and process parameters of TEG modules consisting of bismuth telluride legs, alumina ceramics and copper interconnects using a joining technique based on pressure-assisted silver powder sintering are described. Measurements of the thermal force, electrical resistance, and output power are presented that were performed for hot side module temperatures up to 350°C and temperature differences higher than 300°C. Temperature cycling and results measured during extended high-temperature operation are addressed.

Effect of Immersion Time on Corrosion Behavior of Single-Phase Alloy and Nanocomposite Bismuth Telluride-Based Thermoelectrics in NaCl Solution

NASA Astrophysics Data System (ADS)

Keshavarz, Mohsen K.; Fattah-Alhosseini, Arash

2018-05-01

The corrosiveness of bismuth telluride-based thermoelectric materials (n-type single-phase alloy and a nanocomposite with MoS2 nanoinclusions), in 0.1 molar solution of sodium chloride (NaCl), was investigated. The electrochemical impedance spectroscopy curves obtained after 1, 24, 48 and 72 h immersion time revealed the enhancement of the corrosion resistance of the nanocomposite specimen in a 0.1 molar NaCl solution in comparison with the single-phase bismuth telluride-based alloys, and the passivity increased by immersion time up to 72 h. The nanocomposite sample with submicron grains provided suitable nucleation sites for passive film nucleation that led to higher protective behavior.

Measurement and simulation of thermoelectric efficiency for single leg

NASA Astrophysics Data System (ADS)

Hu, Xiaokai; Yamamoto, Atsushi; Ohta, Michihiro; Nishiate, Hirotaka

2015-04-01

Thermoelectric efficiency measurements were carried out on n-type bismuth telluride legs with the hot-side temperature at 100 and 150 °C. The electric power and heat flow were measured individually. Water coolant was utilized to maintain the cold-side temperature and to measure heat flow out of the cold side. Leg length and vacuum pressure were studied in terms of temperature difference across the leg, open-circuit voltage, internal resistance, and heat flow. Finite-element simulation on thermoelectric generation was performed in COMSOL Multiphysics, by inputting two-side temperatures and thermoelectric material properties. The open-circuit voltage and resistance were in good agreement between the measurement and simulation. Much larger heat flows were found in measurements, since they were comprised of conductive, convective, and radiative contributions. Parasitic heat flow was measured in the absence of bismuth telluride leg, and the conductive heat flow was then available. Finally, the maximum thermoelectric efficiency was derived in accordance with the electric power and the conductive heat flow.

Enhanced interfacial thermal transport in pnictogen tellurides metallized with a lead-free solder alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Devender,; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu; Lofgreen, Kelly

2015-11-15

Controlling thermal transport across metal–thermoelectric interfaces is essential for realizing high efficiency solid-state refrigeration and waste-heat harvesting power generation devices. Here, the authors report that pnictogen chalcogenides metallized with bilayers of Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5} solder and Ni barrier exhibit tenfold higher interfacial thermal conductance Γ{sub c} than that obtained with In/Ni bilayer metallization. X-ray diffraction and x-ray spectroscopy indicate that reduced interdiffusion and diminution of interfacial SnTe formation due to Ni layer correlates with the higher Γ{sub c}. Finite element modeling of thermoelectric coolers metallized with Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5}/Ni bilayers presages a temperature drop ΔT ∼ 22 K that is 40%more » higher than that obtained with In/Ni metallization. Our results underscore the importance of controlling chemical intermixing at solder–metal–thermoelectric interfaces to increase the effective figure of merit, and hence, the thermoelectric cooling efficiency. These findings should facilitate the design and development of lead-free metallization for pnictogen chalcogenide-based thermoelectrics.« less

STATISTICAL ANALYSIS OF SNAP 10A THERMOELECTRIC CONVERTER ELEMENT PROCESS DEVELOPMENT VARIABLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fitch, S.H.; Morris, J.W.

1962-12-15

Statistical analysis, primarily analysis of variance, was applied to evaluate several factors involved in the development of suitable fabrication and processing techniques for the production of lead telluride thermoelectric elements for the SNAP 10A energy conversion system. The analysis methods are described as to their application for determining the effects of various processing steps, estabIishing the value of individual operations, and evaluating the significance of test results. The elimination of unnecessary or detrimental processing steps was accomplished and the number of required tests was substantially reduced by application of these statistical methods to the SNAP 10A production development effort. (auth)

Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narducci, Dario, E-mail: dario.narducci@unimib.it; Consorzio DeltaTi Research; Selezneva, Ekaterina

2012-09-15

Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of themore » actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride. - Graphical abstract: In heavily doped semiconductors potential barriers may lead to both carrier energy filtering and localization. This may lead to an enhancement of the thermoelectric properties of the material, resulting in an unexpected increase of the power factor with the doping level. Highlights: Black-Right-Pointing-Pointer Potential barriers are shown to lead to carrier localization in thermoelectric materials. Black-Right-Pointing-Pointer Evidence is put forward of the formation of a mobility edge. Black-Right-Pointing-Pointer Energy filtering and localization may explain the enhancement of power factor in degenerate semiconductors.« less

Effect of the interface on the mechanical properties and thermal conductivity of bismuth telluride films

NASA Astrophysics Data System (ADS)

Lai, Tang-Yu; Wang, Kuan-Yu; Fang, Te-Hua; Huang, Chao-Chun

2018-02-01

Bismuth telluride (Bi2Te3) is a type of thermoelectric material used for energy generation that does not cause pollution. Increasing the thermoelectric conversion efficiency (ZT) is one of the most important steps in the development of thermoelectric components. In this study, we use molecular dynamics to investigate the mechanical properties and thermal conductivity of quintuple layers of Bi2Te3 nanofilms with different atomic arrangements at the interface and study the effects of varying layers, angles, and grain boundaries. The results indicate that the Bi2Te3 nanofilm perfect substrate has the ideal Young’s modulus and thermal conductivity, and the maximum yield stress is observed for a thickness of ∼90 Å. As the interface changed, the structural disorder of atomic arrangement affected the mechanical properties; moreover, the phonons encounter lattice disordered atomic region will produce scattering reduce heat conduction. The results of this investigation are helpful for the application of Bi2Te3 nanofilms as thermoelectric materials.

Sb- and Bi-doped Mg2Si: location of the dopants, micro- and nanostructures, electronic structures and thermoelectric properties.

PubMed

Farahi, Nader; VanZant, Mathew; Zhao, Jianbao; Tse, John S; Prabhudev, Sagar; Botton, Gianluigi A; Salvador, James R; Borondics, Ferenc; Liu, Zhenxian; Kleinke, Holger

2014-10-28

Due to increasing global energy concerns, alternative sustainable methods to create energy such as thermoelectric energy conversion have become increasingly important. Originally, research into thermoelectric materials was focused on tellurides of bismuth and lead because of the exemplary thermoelectric properties of Bi2Te3 and PbTe. These materials, however, contain toxic lead and tellurium, which is also scarce and thus expensive. A viable alternative material may exist in Mg2Si, which needs to be doped and alloyed in order to achieve reasonable thermoelectric efficiency. Doping is a major problem, as p-type doping has thus far not produced competitive efficiencies, and n-type doping is problematic because of the low solubility of the typical dopants Sb and Bi. This investigation shows experimentally that these dopants can indeed replace Si in the crystal lattice, and excess Sb and Bi atoms are present in the grain boundaries in the form of Mg3Sb2 and Mg3Bi2. As a consequence, the carrier concentration is lower than the formal Sb/Bi concentration suggests, and the thermal conductivity is significantly reduced. DFT calculations are in good agreement with the experimental data, including the band gap and the Seebeck coefficient. Overall, this results in competitive efficiencies despite the low carrier concentration. While ball-milling was previously shown to enhance the solubility of the dopants and thus the carrier concentration, this did not lead to enhanced thermoelectric properties.

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires.

PubMed

Li, Zhen; Xu, Enzhi; Losovyj, Yaroslav; Li, Nan; Chen, Aiping; Swartzentruber, Brian; Sinitsyn, Nikolai; Yoo, Jinkyoung; Jia, Quanxi; Zhang, Shixiong

2017-09-14

The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of an amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In 2 O 3 , SnO 2 , Te and TeO 2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere leads to rapid oxidation of the surface within only one minute. Characterization of electrical conductivity σ, thermopower S, and thermal conductivity κ was performed on the same In-doped nanowire which shows suppressed σ and κ but enhanced S yielding an improved thermoelectric figure of merit ZT compared to the undoped SnTe.

Thermoelectrics. Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics.

PubMed

Kim, Sang Il; Lee, Kyu Hyoung; Mun, Hyeon A; Kim, Hyun Sik; Hwang, Sung Woo; Roh, Jong Wook; Yang, Dae Jin; Shin, Weon Ho; Li, Xiang Shu; Lee, Young Hee; Snyder, G Jeffrey; Kim, Sung Wng

2015-04-03

The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit (zT). The zT of bulk alloys can be improved by reducing lattice thermal conductivity through grain boundary and point-defect scattering, which target low- and high-frequency phonons. Dense dislocation arrays formed at low-energy grain boundaries by liquid-phase compaction in Bi(0.5)Sb(1.5)Te3 (bismuth antimony telluride) effectively scatter midfrequency phonons, leading to a substantially lower lattice thermal conductivity. Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved the zT to 1.86 ± 0.15 at 320 kelvin (K). Further, a thermoelectric cooler confirmed the performance with a maximum temperature difference of 81 K, which is much higher than current commercial Peltier cooling devices. Copyright © 2015, American Association for the Advancement of Science.

Ga-Doping-Induced Carrier Tuning and Multiphase Engineering in n-type PbTe with Enhanced Thermoelectric Performance.

PubMed

Wang, Zhengshang; Wang, Guoyu; Wang, Ruifeng; Zhou, Xiaoyuan; Chen, Zhiyu; Yin, Cong; Tang, Mingjing; Hu, Qing; Tang, Jun; Ang, Ran

2018-06-22

P-type lead telluride (PbTe) emerged as a promising thermoelectric material for intermediate-temperature waste-heat-energy harvesting. However, n-type PbTe still confronted with a considerable challenge owing to its relatively low figure of merit ZT and conversion efficiency η, limiting widespread thermoelectric applications. Here, we report that Ga-doping in n-type PbTe can optimize carrier concentration and thus improve the power factor. Moreover, further experimental and theoretical evidence reveals that Ga-doping-induced multiphase structures with nano- to micrometer size can simultaneously modulate phonon transport, leading to dramatic reduction of lattice thermal conductivity. As a consequence, a tremendous enhancement of ZT value at 823 K reaches ∼1.3 for n-type Pb 0.97 Ga 0.03 Te. In particular, in a wide temperature range from 323 to 823 K, the average ZT ave value of ∼0.9 and the calculated conversion efficiency η of ∼13% are achieved by Ga doping. The present findings demonstrate the great potential in Ga-doped PbTe thermoelectric materials through a synergetic carrier tuning and multiphase engineering strategy.

Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi₂Te₃ and Sb₂Te₃ Thermoelectric Materials.

PubMed

Trung, Nguyen Huu; Sakamoto, Kei; Toan, Nguyen Van; Ono, Takahito

2017-02-10

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi₂Te₃) and P-type antimony telluride (Sb₂Te₃), are performed and compared. As a result, highly oriented Bi₂Te₃ and Sb₂Te₃ thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi₂Te₃ and 500-µm-thick Sb₂Te₃ films are obtained. The Seebeck coefficients for the Bi₂Te₃ and Sb₂Te₃ films are -150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi₂Te₃ is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb₂Te₃. The power factors of each thermoelectric material can reach 15 × 10 -4 W/mK² for Bi₂Te₃ and 11.2 × 10 -4 W/mK² for Sb₂Te₃.

Synthesis and properties of nanocrystalline Bi-Te based thermoelectric materials for energy application

NASA Astrophysics Data System (ADS)

Almohaimeed, Sulaiman

Thermoelectric phenomenon is the science associated with converting thermal energy into electricity based on the Seebeck effect. Bismuth telluride Bi 2Te3 is currently considered to be the state-of-the art thermoelectric material with high efficiency for low temperature applications and is therefore attractive for energy harvesting processes. Nanostructures thermoelectric materials provide a novel way to enhance thermoelectric properties and are considered to be the efficient building blocks for thermoelectric devices. In this work, n- and p-type bulk nanocrystalline Bismuth telluride thermoelectric materials were prepared by mechanical alloying / ball milling technique. The produced nano-crystalline powder were then consolidated using hot compaction under inert atmosphere. The novel processing of these materials maintained the nanostructure in both n- and p-type. Structural properties of the n- and p-types were characterized using X ray diffraction, scanning electron microscopy and transmission electron microscope. These techniques proved that the average grian size of the milled thermoelectric materials was about 20 nm. Accordingly, a Significant improvement in the figure of merit (ZT) is achieved through significant lattice thermal conductivity reduction and Seebeck coefficient improvement. The maximum ZT value for the n-type nanocrystalline thermoelectric was 1.67 at 373 K while the maximum ZT value for the p-type was 1.78 at the same temperature. These values are considered to be the highest values reported for similar materials. Evaluation of the mechanical properties was also performed through microhardness measurement using Vickers micro-hardness test, which shows an enhancement in mechanical properties for the produced materials.

Nanoscale determination of the mass enhancement factor in the lightly doped bulk insulator lead selenide.

PubMed

Zeljkovic, Ilija; Scipioni, Kane L; Walkup, Daniel; Okada, Yoshinori; Zhou, Wenwen; Sankar, R; Chang, Guoqing; Wang, Yung Jui; Lin, Hsin; Bansil, Arun; Chou, Fangcheng; Wang, Ziqiang; Madhavan, Vidya

2015-03-27

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties that could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale level. This opens up a new pathway for investigating the local effects of doping and strain on the mass enhancement factor.

Synthesis of the thermoelectric nanopowder recovered from the used thermoelectric modules.

PubMed

Lee, Kun-Jae; Jin, Yun-Ho; Kong, Man-Sik

2014-10-01

We fabricated the thermoelectric powder using the used thermoelectric modules in a vehicle. As a starting material, the used thermoelectric modules were collected and separated to substrate, electrode, solder, and thermoelectric parts by a thermal process. The separation process was performed in a wet process at the critical temperature. The solder in the module was the neighbor part of the thermoelectric material with the lowest melting temperature in the module. We focused on the thermal property of the solder to separate the thermoelectric chips in the module. After the separation process, we prepared the pure thermoelectric material by the chemical etching for an impurity removal. Also the thermoelectric nanopowder was fabricated by a chemical reduction reaction using the recycled thermoelectric materials. The recovered nanopowder was confirmed to the phase of bismuth telluride (Bi2Te3) with the particle size of -15 nm.

Extraordinary Off-Stoichiometric Bismuth Telluride for Enhanced n-Type Thermoelectric Power Factor.

PubMed

Park, Kunsu; Ahn, Kyunghan; Cha, Joonil; Lee, Sanghwa; Chae, Sue In; Cho, Sung-Pyo; Ryee, Siheon; Im, Jino; Lee, Jaeki; Park, Su-Dong; Han, Myung Joon; Chung, In; Hyeon, Taeghwan

2016-11-02

Thermoelectrics directly converts waste heat into electricity and is considered a promising means of sustainable energy generation. While most of the recent advances in the enhancement of the thermoelectric figure of merit (ZT) resulted from a decrease in lattice thermal conductivity by nanostructuring, there have been very few attempts to enhance electrical transport properties, i.e., the power factor. Here we use nanochemistry to stabilize bulk bismuth telluride (Bi 2 Te 3 ) that violates phase equilibrium, namely, phase-pure n-type K 0.06 Bi 2 Te 3.18 . Incorporated potassium and tellurium in Bi 2 Te 3 far exceed their solubility limit, inducing simultaneous increase in the electrical conductivity and the Seebeck coefficient along with decrease in the thermal conductivity. Consequently, a high power factor of ∼43 μW cm -1 K -2 and a high ZT > 1.1 at 323 K are achieved. Our current synthetic method can be used to produce a new family of materials with novel physical and chemical characteristics for various applications.

Process dependent thermoelectric properties of EDTA assisted bismuth telluride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulsi, Chiranjit; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com; Kargupta, Kajari

2016-04-13

Comparison between the structure and thermoelectric properties of EDTA (Ethylene-diamine-tetra-acetic acid) assisted bismuth telluride prepared by electrochemical deposition and hydrothermal route is reported in the present work. The prepared samples have been structurally characterized by high resolution X-ray diffraction spectra (HRXRD), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopic images (HRTEM). Crystallite size and strain have been determined from Williamson-Hall plot of XRD which is in conformity with TEM images. Measurement of transport properties show sample in the pellet form (S{sub 1}) prepared via hydrothermal route has higher value of thermoelectric power (S) than the electrodepositedmore » film (S{sub 2}). But due to a substantial increase in the electrical conductivity (σ) of the film (S{sub 2}) over the pellet (S{sub 1}), the power factor and the figure of merit is higher for sample S{sub 2} than the sample S{sub 1} at room temperature.« less

Fabrication of Nanovoid-Imbedded Bismuth Telluride with Low Dimensional System

NASA Technical Reports Server (NTRS)

Chu, Sang-Hyon (Inventor); Choi, Sang H. (Inventor); Kim, Jae-Woo (Inventor); Park, Yeonjoon (Inventor); Elliott, James R. (Inventor); King, Glen C. (Inventor); Stoakley, Diane M. (Inventor)

2013-01-01

A new fabrication method for nanovoids-imbedded bismuth telluride (Bi--Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi--Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.

Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

PubMed

Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

2017-02-01

Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles

NASA Astrophysics Data System (ADS)

Bali, Ashoka; Chetty, Raju; Mallik, Ramesh Chandra

2014-04-01

Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbSxTe(1-x) and PbSexTe(1-x) (0≤x≤1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

Thermoelectric properties and thermal stability of layered chalcogenides, TlScQ2, Q = Se, Te.

PubMed

Aswathy, Vijayakumar Sajitha; Sankar, Cheriyedath Raj; Varma, Manoj Raama; Assoud, Abdeljalil; Bieringer, Mario; Kleinke, Holger

2017-12-12

A few thallium based layered chalcogenides of α-NaFeO 2 structure-type are known for their excellent thermoelectric properties and interesting topological insulator nature. TlScQ 2 belongs to this structural category. In the present work, we have studied the electronic structure, electrical and thermal transport properties and thermal stability of the title compounds within the temperature range 2-600 K. Density functional theory (DFT) predicts a metallic nature for TlScTe 2 and a semiconducting nature for TlScSe 2 . DFT calculations also show significant lowering of energies of frontier bands upon inclusion of spin-orbit coupling contribution in the calculation. The electronic structure also shows the simultaneous occurrence of holes and electron pockets for the telluride. Experiments reveal that the telluride shows a semi-metallic behaviour whereas the selenide is a semiconductor. The thermoelectric properties for both the materials were also investigated. Both these materials possess very low thermal conductivity which is an attractive feature for thermoelectrics. However, they lack thermal stability and decompose upon warming above room temperature, as evidenced from high temperature powder X-ray diffraction and thermal analysis.

Thermoelectric properties of PbTe with indium and bismuth secondary phase

NASA Astrophysics Data System (ADS)

Bali, A.; Chetty, R.; Mallik, R. C.

2016-06-01

Lead telluride (PbTe) with indium (In) and bismuth (Bi) as micrometer sized secondary phases dispersed throughout the bulk has been prepared by matrix encapsulation method. In and Bi are not found to substitute in PbTe as shown by Rietveld and room temperature Raman studies but are present as secondary phases. Increased values of temperature dependent electrical resistivity and Seebeck coefficient show the effect of interfaces on electronic transport. As expected, thermal conductivity is found to reduce on addition of secondary phases due to a reduced electronic contribution, further confirming that electron scattering at interfaces is more important than phonon scattering in such systems for thermoelectric properties. However, due to the reduction in the power factor of the In and Bi added samples from that of the parent PbTe, the overall thermoelectric figure of merit ( zT) does not increase beyond that of PbTe, for which the highest value of 0.7 is obtained at 778 K.

Diameter dependent thermoelectric properties of individual SnTe nanowires

DOE PAGES

Xu, E. Z.; Li, Z.; Martinez, J. A.; ...

2015-01-15

The lead-free compound tin telluride (SnTe) has recently been suggested to be a promising thermoelectric material. In this work, we report on the first thermoelectric study of individual single-crystalline SnTe nanowires with different diameters ranging from ~ 218 to ~ 913 nm. Measurements of thermopower S, electrical conductivity σ and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While the electrical conductivity does not show a strong diameter dependence, the thermopower increases by a factor of two when the nanowire diameter is decreased from ~ 913 nm to ~more » 218 nm. The thermal conductivity of the measured NWs is lower than that of the bulk SnTe, which may arise from the enhanced phonon - surface boundary scattering and phonon-defect scattering. Lastly, temperature dependent figure of merit ZT was determined for individual nanowires and the achieved maximum value at room temperature is about three times higher than that in bulk samples of comparable carrier density.« less

Nanostructured Bulk Thermoelectric Generator for Efficient Power Harvesting for Self-powered Sensor Networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yanliang; Butt, Darryl; Agarwal, Vivek

2015-07-01

The objective of this Nuclear Energy Enabling Technology research project is to develop high-efficiency and reliable thermoelectric generators for self-powered wireless sensors nodes utilizing thermal energy from nuclear plant or fuel cycle. The power harvesting technology has crosscutting significance to address critical technology gaps in monitoring nuclear plants and fuel cycle. The outcomes of the project will lead to significant advancement in sensors and instrumentation technology, reducing cost, improving monitoring reliability and therefore enhancing safety. The self-powered wireless sensor networks could support the long-term safe and economical operation of all the reactor designs and fuel cycle concepts, as well asmore » spent fuel storage and many other nuclear science and engineering applications. The research is based on recent breakthroughs in high-performance nanostructured bulk (nanobulk) thermoelectric materials that enable high-efficiency direct heat-to-electricity conversion over a wide temperature range. The nanobulk thermoelectric materials that the research team at Boise State University and University of Houston has developed yield up to a 50% increase in the thermoelectric figure of merit, ZT, compared with state-of-the-art bulk counterparts. This report focuses on the selection of optimal thermoelectric materials for this project. The team has performed extensive study on two thermoelectric materials systems, i.e. the half-Heusler materials, and the Bismuth-Telluride materials. The report contains our recent research results on the fabrication, characterization and thermoelectric property measurements of these two materials.« less

A totally phosphine-free synthesis of metal telluride nanocrystals by employing alkylamides to replace alkylphosphines for preparing highly reactive tellurium precursors.

PubMed

Yao, Dong; Liu, Yi; Zhao, Wujun; Wei, Haotong; Luo, Xintao; Wu, Zhennan; Dong, Chunwei; Zhang, Hao; Yang, Bai

2013-10-21

Despite the developments in the wet chemical synthesis of high-quality semiconductor nanocrystals (NCs) with diverse elemental compositions, telluride NCs are still irreplaceable materials owing to their excellent photovoltaic and thermoelectric performances. Herein we demonstrate the dissolution of elemental tellurium (Te) in a series of alkylamides by sodium borohydride (NaBH4) reduction at relatively low temperature to produce highly reactive precursors for hot-injection synthesis of telluride NCs. The capability to tune the reactivity of Te precursors by selecting injection temperature permits control of NC size over a broad range. The current preparation of Te precursors is simple, economical, and totally phosphine-free, which will promote the commercial synthesis and applications of telluride NCs.

Thermoelectric transport properties of the n-type impurity Al in PbTe

NASA Astrophysics Data System (ADS)

Jaworski, Christopher M.; Heremans, Joseph P.

2012-01-01

Because Tl and In are known to be resonant levels in IV-VI semiconductors, here we synthesize and electrically characterize lead telluride doped n-type with aluminum. The results show that Al behaves as a normal donor in PbTe, reaching a maximum electron concentration of 4 1019 cm-3. At 300 K, the thermopower, when plotted as function of electron concentration (the Pisarenko relation), follows the calculated line for the conduction band of PbTe, and no enhancement is observed that could indicate the presence of a resonant level.

Nanoscale determination of the mass enhancement factor in the lightly doped bulk insulator lead selenide

DOE PAGES

Zeljkovic, Ilija; Scipioni, Kane L.; Walkup, Daniel; ...

2015-03-27

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties that could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly doped thermoelectric bulk insulator PbSe. In addition to its highmore » energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale level. Finally, this opens up a new pathway for investigating the local effects of doping and strain on the mass enhancement factor.« less

Temperature and pressure effects on elastic properties of relaxor ferroelectrics and thermoelectrics: A resonant ultrasound spectroscopy study

NASA Astrophysics Data System (ADS)

Tennakoon, Sumudu P.

Relaxor ferroelectric lead magnesium niobate-lead titanate (PMN-PT) material exhibits exceptional electromechanical properties. The material undergoes a series of structural phase transitions with changes in temperature and the chemical composition. The work covered in this dissertation seek to gain insight into the phase diagram of PMN-PT using temperature and pressure dependence of the elastic properties. Single crystal PMN-PT with a composition near morphotropic phase boundary (MPB) was investigated using a resonant ultrasound spectroscopy (RUS) methodologies in the temperature range of 293 K - 800 K and the pressure range from near vacuum to 3.4 MPa. At atmospheric pressure, significantly high acoustic attenuation of PMN-PT is observed at temperatures below 400 K. A strong stiffening is observed in the temperature range of 400 K - 673 K, followed by a gradual softening at higher temperatures. With varying pressure, an increased pressure sensitivity of the elastic properties of PMN-PT is observed at the temperatures in the stiffening phase. Elastic behavior at elevated temperatures and pressures were studied for correlations with the ferroelectric domains at temperatures below the Curie temperature (TC), the locally polarized nano-regions, and an existence of pseudo-cubic crystalline at higher temperatures between (TC and TB). Thermoelectric lanthanum tellurides and skutterudites are being investigated by NASA's Jet Propulsion Laboratory for advanced thermoelectric generates (TEGs). Effects of nickel (Ni) doping on elastic properties of lanthanum tellurides at elevated temperatures were investigated in the temperature range of 293 K - 800 K. A linear stiffening was observed with increasing the Ni content in the material. Elastic properties of p-type and n-type bismuth-based skutterudites were investigated in the temperature range of 293 K - 723 K. Elastic properties of rare-earth doped strontium titanate were also investigated in the temperature range of 293 K - 750 K.

Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi2Te3 and Sb2Te3 Thermoelectric Materials

PubMed Central

Trung, Nguyen Huu; Sakamoto, Kei; Toan, Nguyen Van; Ono, Takahito

2017-01-01

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi2Te3) and P-type antimony telluride (Sb2Te3), are performed and compared. As a result, highly oriented Bi2Te3 and Sb2Te3 thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi2Te3 and 500-µm-thick Sb2Te3 films are obtained. The Seebeck coefficients for the Bi2Te3 and Sb2Te3 films are −150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi2Te3 is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb2Te3. The power factors of each thermoelectric material can reach 15 × 10−4 W/mK2 for Bi2Te3 and 11.2 × 10−4 W/mK2 for Sb2Te3. PMID:28772511

Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

NASA Astrophysics Data System (ADS)

Fu, Gaosheng; Zuo, Lei; Lian, Jie; Wang, Yongqiang; Chen, Jie; Longtin, Jon; Xiao, Zhigang

2015-09-01

Thermoelectric energy harvesting is a very promising application in nuclear power plants for self-maintained wireless sensors. However, the effects of intensive radiation on the performance of thermoelectric materials under relevant reactor environments such as energetic neutrons are not fully understood. In this work, radiation effects of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric thin film samples prepared by E-beam evaporation are investigated using Ne2+ ion irradiations at different fluences of 5 × 1014, 1015, 5 × 1015 and 1016 ions/cm2 with the focus on the transport and structural properties. Electrical conductivities, Seebeck coefficients and power factors are characterized as ion fluence changes. X-ray diffraction (XRD) and transmission electron microscopy (TEM) of the samples are obtained to assess how phase and microstructure influence the transport properties. Carrier concentration and Hall mobility are obtained from Hall effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. Positive effects of ion irradiations from Ne2+ on thermoelectric material property are observed to increase the power factor to 208% for Bi2Te3 and 337% for Sb2Te3 materials between fluence of 1 and 5 × 1015 cm2, due to the increasing of the electrical conductivity as a result of ionization radiation-enhanced crystallinity. However, under a higher fluence, 5 × 1015 cm2 in this case, the power factor starts to decrease accordingly, limiting the enhancements of thermoelectric materials properties under intensive radiation environment.

High doping effect on the thermoelectric properties of p-type lead telluride

NASA Astrophysics Data System (ADS)

Dmitriev, A. V.

2018-04-01

We study theoretically the effect of heavy doping on the thermoelectric properties of p-type PbTe in the acceptor doping interval of 5 × 1019 to 4 × 1020 cm-3 and in the temperature range of 300 to 900 K. In our calculations, a three-band model of the PbTe electron energy spectrum is used that takes into account not only the light electron and hole bands but also the heavy-hole band. This so-called Σ-band plays an important role in the emergence of the figure-of-merit increase in this material at heavy acceptor doping. The calculated thermoelectric characteristics appear to be sensitive to the doping level. An increase in the figure-of-merit up to ZT ≈ 1.3 at 900 K was found at the doping level of 2 × 1020 cm-3. The maximum of ZT on the temperature axis is situated close to the temperature at which the light hole and heavy hole band edges coincide and hence, a prominent density-of-states singularity appears in the valence band, and the Fermi level lies near this singularity.

The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system

NASA Astrophysics Data System (ADS)

Bjørk, R.; Nielsen, K. K.

2015-10-01

The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system is examined using an analytical model for four different types of commercial PVs and a commercial bismuth telluride TEG. The TEG is applied directly on the back of the PV, so that the two devices have the same temperature. The PVs considered are crystalline Si (c-Si), amorphous Si (a-Si), copper indium gallium (di)selenide (CIGS) and cadmium telluride (CdTe) cells. The degradation of PV performance with temperature is shown to dominate the increase in power produced by the TEG, due to the low efficiency of the TEG. For c-Si, CIGS and CdTe PV cells the combined system produces a lower power and has a lower efficiency than the PV alone, whereas for an a-Si cell the total system performance may be slightly increased by the TEG.

Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bali, Ashoka, E-mail: rcmallik@physics.iisc.ernet.in; Chetty, Raju, E-mail: rcmallik@physics.iisc.ernet.in; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in

2014-04-24

Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbS{sub x}Te{sub (1−x)} and PbSe{sub x}Te{sub (1−x)} (0≤x≤1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predictedmore » stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.« less

Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Kurita, Kensuke; Hagino, Harutoshi

2015-08-14

A two-step method that combines homogeneous electron beam (EB) irradiation and thermal annealing has been developed to enhance the thermoelectric properties of nanocrystalline bismuth selenium telluride thin films. The thin films, prepared using a flash evaporation method, were treated with EB irradiation in a N{sub 2} atmosphere at room temperature and an acceleration voltage of 0.17 MeV. Thermal annealing was performed under Ar/H{sub 2} (5%) at 300 °C for 60 min. X-ray diffraction was used to determine that compositional phase separation between bismuth telluride and bismuth selenium telluride developed in the thin films exposed to higher EB doses and thermal annealing. We proposemore » that the phase separation was induced by fluctuations in the distribution of selenium atoms after EB irradiation, followed by the migration of selenium atoms to more stable sites during thermal annealing. As a result, thin film crystallinity improved and mobility was significantly enhanced. This indicates that the phase separation resulting from the two-step method enhanced, rather than disturbed, the electron transport. Both the electrical conductivity and the Seebeck coefficient were improved following the two-step method. Consequently, the power factor of thin films that underwent the two-step method was enhanced to 20 times (from 0.96 to 21.0 μW/(cm K{sup 2}) that of the thin films treated with EB irradiation alone.« less

Powder processing and mechanical properties of Silver0.86Lead19Antimony telluride20 (LAST) and Lead0.95Tin0.05Tellurium - Lead sulfide 8% (Lead telluride -Lead sulfide) thermoelectric materials

NASA Astrophysics Data System (ADS)

Ni, Jennifer Elisabeth

Thermoelectric (TE) materials convert between thermal and electrical energy and when used with existing processes will increase the efficiency via waste heat recovery. Ag0.86Pb19SbTe20 (LAST) and Pb0.95Sn0.05Te - PbS 8% (PbTe-PbS) materials exhibit good thermoelectric (TE) properties and have potential applications as thermoelectric generators in waste heat recovery. However, to fully characterize the thermo-mechanical behavior of LAST and PbTe-PbS materials under in-service conditions, knowledge is needed of the mechanical and thermal properties at room and high temperature. As fracture strength is inversely proportional to the square root of grain size, cast ingots were powder processed to reduce powder particle size. Three different powder processing methods were used (1) dry milling only, (2) wet milling only, or (3) dry milling and wet milling The specimens were fabricated using hot pressing or pulsed electric current sintering (PECS) from planetary ball milled powders. In this study, elastic moduli, including Young's modulus, shear modulus, and Poisson's ratio, were measured dynamically using resonant ultrasound spectroscopy (RUS) at room temperature and as a function of temperature up to 663 K. The room temperature porosity dependence for Young's modulus followed the empirical exponential relationships common for brittle materials, with a material dependent constant bPE of 3.5 and 1.3 for LAST and PbTe-PbS, respectively. The room temperature Young's modulus for a theoretically dense specimen was 58.4 +/- 0.6 GPa and 56.2 +/- 0.4 GPa for for LAST and PbTe-PbS, respectively. For hot pressed PbTe-PbS specimens, the Vickers indentations mean hardness and fracture toughness was 1.18 + 0.09 GPa and 0.35 +/- 0.04 MPa·m 1/2. The coefficient of thermal expansion is important for understanding the mechanical response of a material to a thermal gradient or a thermal transient. For PbTe-PbS the coefficient of thermal expansion measured using dilatometry and high temperature x-ray diffraction was 21.5 x 10-6 K -1. Bloating during post-densification annealing was measured indirectly using resonant ultrasound spectroscopy and dilatometry and directly using scanning electron microscopy. Dry milled only PECS-processed PbTe-PbS specimens did not bloat during post-densification anneals up to 936 K. Hot pressed and PECS-processed specimens processed from wet milled and dry and wet milled powder bloated during densification anneals at temperatures over 603 K.

Thermoelectric Generators for Automotive Waste Heat Recovery Systems Part I: Numerical Modeling and Baseline Model Analysis

NASA Astrophysics Data System (ADS)

Kumar, Sumeet; Heister, Stephen D.; Xu, Xianfan; Salvador, James R.; Meisner, Gregory P.

2013-04-01

A numerical model has been developed to simulate coupled thermal and electrical energy transfer processes in a thermoelectric generator (TEG) designed for automotive waste heat recovery systems. This model is capable of computing the overall heat transferred, the electrical power output, and the associated pressure drop for given inlet conditions of the exhaust gas and the available TEG volume. Multiple-filled skutterudites and conventional bismuth telluride are considered for thermoelectric modules (TEMs) for conversion of waste heat from exhaust into usable electrical power. Heat transfer between the hot exhaust gas and the hot side of the TEMs is enhanced with the use of a plate-fin heat exchanger integrated within the TEG and using liquid coolant on the cold side. The TEG is discretized along the exhaust flow direction using a finite-volume method. Each control volume is modeled as a thermal resistance network which consists of integrated submodels including a heat exchanger and a thermoelectric device. The pressure drop along the TEG is calculated using standard pressure loss correlations and viscous drag models. The model is validated to preserve global energy balances and is applied to analyze a prototype TEG with data provided by General Motors. Detailed results are provided for local and global heat transfer and electric power generation. In the companion paper, the model is then applied to consider various TEG topologies using skutterudite and bismuth telluride TEMs.

Prototype Combined Heater/Thermoelectric Power Generator for Remote Applications

NASA Astrophysics Data System (ADS)

Champier, D.; Favarel, C.; Bédécarrats, J. P.; Kousksou, T.; Rozis, J. F.

2013-07-01

This study presents a prototype thermoelectric generator (TEG) developed for remote applications in villages that are not connected to the electrical power grid. For ecological and economic reasons, there is growing interest in harvesting waste heat from biomass stoves to produce some electricity. Because regular maintenance is not required, TEGs are an attractive choice for small-scale power generation in inaccessible areas. The prototype developed in our laboratory is especially designed to be implemented in stoves that are also used for domestic hot water heating. The aim of this system is to provide a few watts to householders, so they have the ability to charge cellular phones and radios, and to get some light at night. A complete prototype TEG using commercial (bismuth telluride) thermoelectric modules has been built, including system integration with an electric DC/DC converter. The DC/DC converter has a maximum power point tracker (MPPT) driven by an MC9SO8 microcontroller, which optimizes the electrical energy stored in a valve-regulated lead-acid battery. Physical models were used to study the behavior of the thermoelectric system and to optimize the performance of the MPPT. Experiments using a hot gas generator to simulate the exhaust of the combustion chamber of a stove are used to evaluate the system. Additionally, potential uses of such generators are presented.

Thermoelectric properties of bismuth telluride nanoplate thin films determined using combined infrared spectroscopy and first-principles calculation

NASA Astrophysics Data System (ADS)

Wada, Kodai; Tomita, Koji; Takashiri, Masayuki

2018-06-01

The thermoelectric properties of bismuth telluride (Bi2Te3) nanoplate thin films were estimated using combined infrared spectroscopy and first-principles calculation, followed by comparing the estimated properties with those obtained using the standard electrical probing method. Hexagonal single-crystalline Bi2Te3 nanoplates were first prepared using solvothermal synthesis, followed by preparing Bi2Te3 nanoplate thin films using the drop-casting technique. The nanoplates were joined by thermally annealing them at 250 °C in Ar (95%)–H2 (5%) gas (atmospheric pressure). The electronic transport properties were estimated by infrared spectroscopy using the Drude model, with the effective mass being determined from the band structure using first-principles calculations based on the density functional theory. The electrical conductivity and Seebeck coefficient obtained using the combined analysis were higher than those obtained using the standard electrical probing method, probably because the contact resistance between the nanoplates was excluded from the estimation procedure of the combined analysis method.

Thermoelectric transport properties of PbTe-based composites incorporated with Cu2Se nano-inclusions

NASA Astrophysics Data System (ADS)

Guo, Haifeng; Xin, Hongxing; Qin, Xiaoying; Jian, Zhang; Li, Di; Li, Yuanyue; Li, Cong

2016-02-01

Thermoelectric transport properties of Lead telluride (PbTe)-based composites incorporated with Cuprous selenide (Cu2Se) nano-inclusions were investigated from 300 K to 800 K. Here, except for the transition from p-type to n-type conduction that occurs in pristine PbTe at ~530 K due to the difference of mobility between thermally electron and hole at high temperature, another transition from p-type to n-type conduction at 300 K with an increasing proportion of Cu2Se could be due to the donor levels introduced by defects and unsaturated bonds at the interfaces. Moreover, by incorporating a small proportion (5 vol.%) of Cu2Se nanoparticles into the PbTe matrix to form nano-composites, both a reduction (~55%) in lattice thermal conductivity and an enhanced electrical conductivity compared with that of pristine PbTe are obtained, which allows the thermoelectric power factor to reach a larger value (~11.2 μW cm-1 K-2). Consequently, a maximum value ZT  =  0.91 is obtained at 760 K in the PbTe-5 vol.% Cu2Se sample.

Parametric Optimization of Thermoelectric Generators for Waste Heat Recovery

NASA Astrophysics Data System (ADS)

Huang, Shouyuan; Xu, Xianfan

2016-10-01

This paper presents a methodology for design optimization of thermoelectric-based waste heat recovery systems called thermoelectric generators (TEGs). The aim is to maximize the power output from thermoelectrics which are used as add-on modules to an existing gas-phase heat exchanger, without negative impacts, e.g., maintaining a minimum heat dissipation rate from the hot side. A numerical model is proposed for TEG coupled heat transfer and electrical power output. This finite-volume-based model simulates different types of heat exchangers, i.e., counter-flow and cross-flow, for TEGs. Multiple-filled skutterudites and bismuth-telluride-based thermoelectric modules (TEMs) are applied, respectively, in higher and lower temperature regions. The response surface methodology is implemented to determine the optimized TEG size along and across the flow direction and the height of thermoelectric couple legs, and to analyze their covariance and relative sensitivity. A genetic algorithm is employed to verify the globality of the optimum. The presented method will be generally useful for optimizing heat-exchanger-based TEG performance.

Fabrication of large-scale single-crystal bismuth telluride (Bi2Te3) nanosheet arrays by a single-step electrolysis process

NASA Astrophysics Data System (ADS)

Tsai, Hung-Wei; Wang, Tsang-Hsiu; Chan, Tsung-Cheng; Chen, Pei-Ju; Chung, Chih-Chun; Yaghoubi, Alireza; Liao, Chien-Neng; Diau, Eric Wei-Guang; Chueh, Yu-Lun

2014-06-01

Nanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi2Te3)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues. In the present study, we demonstrate a one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of bulk Bi2Te3 with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 μΩ m, respectively. The formation mechanism of NSAs has been proposed. A 1.12% efficiency of quantum dot-sensitized solar cells with Bi2Te3 NSAs for counter electrode has been demonstrated, indicating that Bi2Te3 NSAs from top-down processing with a high ratio of surface area to volume are a promising candidate for possible applications such as thermoelectrics, dye-sensitized solar cells (DSSCs), and lithium-ion batteries.Nanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi2Te3)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues. In the present study, we demonstrate a one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of bulk Bi2Te3 with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 μΩ m, respectively. The formation mechanism of NSAs has been proposed. A 1.12% efficiency of quantum dot-sensitized solar cells with Bi2Te3 NSAs for counter electrode has been demonstrated, indicating that Bi2Te3 NSAs from top-down processing with a high ratio of surface area to volume are a promising candidate for possible applications such as thermoelectrics, dye-sensitized solar cells (DSSCs), and lithium-ion batteries. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00184b

In-plane optical anisotropy of layered gallium telluride

DOE PAGES

Huang, Shengxi; Tatsumi, Yuki; Ling, Xi; ...

2016-08-16

Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C 2h 3 space group. Investigating the in-plane optical anisotropy, including the electron–photon and electron–phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropymore » in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. Furthermore, these studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.« less

A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

DOE PAGES

Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; ...

2016-05-02

In this study, SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ~4 μ B (Bohr magneton) of magnetic moment to Sn 1–xMn xTe. The Curie temperatureTC reaches ~14K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient R H andmore » a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivityκ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

PubMed

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varghese, Tony; Hollar, Courtney; Richardson, Joseph

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE PAGES

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; ...

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

PubMed Central

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J.; Zhang, Yanliang

2016-01-01

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm2 with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications. PMID:27615036

Synthesis and Characterization of Rare-Earth Tellurides and Their Composites For High-Temperature Thermoelectric Applications

NASA Astrophysics Data System (ADS)

Cheikh, Dean

Radioisotope thermoelectric generators (RTGs) are solid-state energy conversion devices and have been a vital power generation technology for deep space missions conducted by the National Aeronautics and Space Administration (NASA). At the heart of these generators are thermoelectric materials that convert heat given off by a radioisotope decay into electricity through the Seebeck effect. While these systems have demonstrated long-term reliability, the current state-of-practice materials have thermoelectric figures of merit, ZT, near 1, leading to low system level efficiencies of 6.5%. The figure of merit is defined as ZT = sigmaS 2/kappa T where sigma, S, kappa, and T are electrical conductivity, Seebeck coefficient, thermal conductivity, and temperature, respectively. Development of higher ZT materials would enable future NASA missions to perform a greater number of scientific experiments and extend mission lifetimes. Lanthanum telluride (La3-xTe4) is a state-of-the-art n-type high-temperature thermoelectric material, with a ZT of 1.1 at 1275 K. It has been demonstrated that the electrical resistivity and Seebeck coefficient of this material can be decoupled when nickel inclusions are added to form a composite. This new phenomenon, known as composite assisted funneling of electrons (CAFE), allows for the resistivity of the composite to decrease while leaving the Seebeck coefficient unaffected when 12-15 vol% nickel was incorporated. The initial work presented in this dissertation focused on microstructural modifications to La3-xTe4-Ni composites to attain a better understanding of the CAFE mechanism. This investigation was conducted by varying the size of the nickel particles compared to what were used in the previous composite study. A 60% increase in ZT to a value of 1.9 at 1200 K for the composites with the smallest Ni particle size was obtained due to an increased Seebeck coefficient and decreased thermal conductivity. The next study focused on the extension of the CAFE effect in La 3-xTe4 to use inclusions other than nickel. Cobalt of a similar size to the nickel in the initial La3-xTe4-Ni composite work was used. A series of La3-xTe4-Co composites were synthesized and their thermoelectric properties characterized. A gradual decrease in resistivity was observed above 8 vol% cobalt, suggesting the CAFE mechanism was occurring. An 18% increase to the Seebeck coefficient was observed between 5-8 vol% cobalt, likely due to contamination on the cobalt powder, altering the carrier concentration of the matrix. The increase to the Seebeck coefficient allowed for a ZT of 1.5 at 1225 K to be achieved at 5 vol% cobalt. The final investigation in this dissertation focused on the synthesis and thermoelectric characterization of praseodymium telluride (Pr3-x Te4). Density functional theory (DFT) calculations predicted a large peak in the density of states (DOS) of Pr3-xTe4 at its Fermi level compared to La3-xTe4, due to the 4ƒ electrons of praseodymium. This change in the band structure was predicted to increase the Seebeck coefficient of Pr3-xTe4 over La3-xTe4. A series of Pr3-xTe4 with varying vacancy concentrations were mechanochemically synthesized and characterized. A 25% improvement in the Seebeck coefficient and 25% decrease in the thermal conductivity compared to La3-xTe4 was observed. The thermoelectric properties were found to optimize at a composition of Pr2.74Te4, reaching a ZT of 1.7 at 1200 K.

Combined electronic and thermodynamic approaches for enhancing the thermoelectric properties of Ti-doped PbTe.

PubMed

Komisarchik, G; Gelbstein, Y; Fuks, D

2016-11-30

Lead telluride based compounds are of great interest due to their enhanced thermoelectric transport properties. Nevertheless, the donor type impurities in this class of materials are currently mainly limited and alternative types of donor impurities are still required for optimizing the thermoelectric performance. In the current research titanium as a donor impurity in PbTe is examined. Although titanium is known to form resonant levels above the conduction band in PbTe, it does not enhance the thermo-power beyond the classical predictions. Recent experiments showed that alloying with a small amount of Ti (∼0.1 at%) gives a significant increase in the figure of merit. In the current research ab initio calculations were applied in order to correlate the reported experimental results with a thermoelectric optimization model. It was found that a Ti concentration of ∼1.4 at% in the Pb sublattice is expected to maximize the thermoelectric power factor. Using a statistical thermodynamic approach and in agreement with the previously reported appearance of a secondary intermetallic phase, the actual Ti solubility limit in PbTe is found to be ∼0.3 at%. Based on the proposed model, the mechanism for the formation of the previously observed secondary phase is attributed to phase separation reactions, characterized by a positive enthalpy of formation in the system. With extrapolation of the obtained ab initio results, it is demonstrated that lower Ti-doping concentrations than previously experimentally reported ones are expected to provide power factor values close to the maximal one, making doping with Ti a promising opportunity for the generation of highly efficient n-type PbTe-based thermoelectric materials.

Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

NASA Astrophysics Data System (ADS)

Pettes, Michael Thompson; Kim, Jaehyun; Wu, Wei; Bustillo, Karen C.; Shi, Li

2016-10-01

We report the in-plane thermoelectric properties of suspended (Bi1-xSbx)2Te3 nanoplates with x ranging from 0.07 to 0.95 and thicknesses ranging from 9 to 42 nm. The results presented here reveal a trend of increasing p-type behavior with increasing antimony concentration, and a maximum Seebeck coefficient and thermoelectric figure of merit at x ˜ 0.5. We additionally tuned extrinsic doping of the surface using a tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) coating. The lattice thermal conductivity is found to be below that for undoped ultrathin Bi2Te3 nanoplates of comparable thickness and in the range of 0.2-0.7 W m-1 K-1 at room temperature.

Shockwave Consolidation of Nanostructured Thermoelectric Materials

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Taylor, Patrick; Nemir, David

2014-01-01

Nanotechnology based thermoelectric materials are considered attractive for developing highly efficient thermoelectric devices. Nano-structured thermoelectric materials are predicted to offer higher ZT over bulk materials by reducing thermal conductivity and increasing electrical conductivity. Consolidation of nano-structured powders into dense materials without losing nanostructure is essential towards practical device development. Using the gas atomization process, amorphous nano-structured powders were produced. Shockwave consolidation is accomplished by surrounding the nanopowder-containing tube with explosives and then detonating. The resulting shock wave causes rapid fusing of the powders without the melt and subsequent grain growth. We have been successful in generating consolidated nano-structured bismuth telluride alloy powders by using the shockwave technique. Using these consolidated materials, several types of thermoelectric power generating devices have been developed. Shockwave consolidation is anticipated to generate large quantities of nanostructred materials expeditiously and cost effectively. In this paper, the technique of shockwave consolidation will be presented followed by Seebeck Coefficient and thermal conductivity measurements of consolidated materials. Preliminary results indicate a substantial increase in electrical conductivity due to shockwave consolidation technique.

Thermoelectric Generation Of Current - Theoretical And Experimental Analysis

NASA Astrophysics Data System (ADS)

Ruciński, Adam; Rusowicz, Artur

2017-12-01

This paper provides some information about thermoelectric technology. Some new materials with improved figures of merit are presented. These materials in Peltier modules make it possible to generate electric current thanks to a temperature difference. The paper indicates possible applications of thermoelectric modules as interesting tools for using various waste heat sources. Some zero-dimensional equations describing the conditions of electric power generation are given. Also, operating parameters of Peltier modules, such as voltage and electric current, are analyzed. The paper shows chosen characteristics of power generation parameters. Then, an experimental stand for ongoing research and experimental measurements are described. The authors consider the resistance of a receiver placed in the electric circuit with thermoelectric elements. Finally, both the analysis of experimental results and conclusions drawn from theoretical findings are presented. Voltage generation of about 1.5 to 2.5 V for the temperature difference from 65 to 85 K was observed when a bismuth telluride thermoelectric couple (traditionally used in cooling technology) was used.

Performance Analysis of the Automotive TEG with Respect to the Geometry of the Modules

NASA Astrophysics Data System (ADS)

Yu, C. G.; Zheng, S. J.; Deng, Y. D.; Su, C. Q.; Wang, Y. P.

2017-05-01

Recently there has been increasing interest in applying thermoelectric technology to recover waste heat in automotive exhaust gas. Due to the limited space in the vehicle, it's meaningful to improve the TEG (thermoelectric generator) performance by optimizing the module geometry. This paper analyzes the performance of bismuth telluride modules for two criteria (power density and power output per area), and researches the relationship between the performance and the geometry of the modules. A geometry factor is defined for the thermoelectric element to describe the module geometry, and a mathematical model is set up to study the effects of the module geometry on its performance. It has been found out that the optimal geometry factors for maximum output power, power density and power output per unit area are different, and the value of the optimal geometry factors will be affected by the volume of the thermoelectric material and the thermal input. The results can be referred to as the basis for optimizing the performance of the thermoelectric modules.

Thermoelectric properties of Nb3SbxTe7-x compounds

NASA Technical Reports Server (NTRS)

Snyder, J.; Wang, S.; Caillat, T.

2002-01-01

Niobium antimony telluride, Nb3Sbx,Te7-x, was synthesized and tested for thermoelectric properties in the Thermoelectrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield acomplicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x, compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Te5 is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n-type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondary metallic phases that dominated the transport properties of the resulting compounds.

Construction of a High Temperature Teg Measurement System for the Evaluation of Thermoelectric Oxide Modules

NASA Astrophysics Data System (ADS)

Populoh, S.; Trottmann, M.; Brunko, O. C.; Thiel, P.; Weidenkaff, A.

2013-08-01

A dedicated test stand was developed and built to characterize the efficiency, power output and open circuit voltage of various thermoelectric generators (TEGs) based on tellurides, heusler compounds and thermoelectric oxides. The test stand allows measurements of TEGs of sizes up to 4 cm × 4 cm at hot side temperatures up to 1150 K in different atmospheres. Special care was taken about the heat flux measurement by precise measurement of the temperature distribution within the reference block. In order to demonstrate the functionality of the test stand thermoelectric oxide modules (TOM) were built from n-type perovskite-type manganates and p-type cuprates. The modules were tested regarding their stability, maximum power output and efficiency at temperatures up to 1100 K. The TOMs withstand large temperature gradients and operated in ambient air yielding high power densities.

Micro- and Macromechanical Properties of Thermoelectric Lead Chalcogenides.

PubMed

Li, Guodong; Aydemir, Umut; Duan, Bo; Agne, Matthias T; Wang, Hongtao; Wood, Max; Zhang, Qingjie; Zhai, Pengcheng; Goddard, William A; Snyder, G Jeffrey

2017-11-22

Both n- and p-type lead telluride (PbTe)-based thermoelectric (TE) materials display high TE efficiency, but the low fracture strength may limit their commercial applications. To find ways to improve these macroscopic mechanical properties, we report here the ideal strength and deformation mechanism of PbTe using density functional theory calculations. This provides structure-property relationships at the atomic scale that can be applied to estimate macroscopic mechanical properties such as fracture toughness. Among all the shear and tensile paths that are examined here, we find that the lowest ideal strength of PbTe is 3.46 GPa along the (001)/⟨100⟩ slip system. This leads to an estimated fracture toughness of 0.28 MPa m 1/2 based on its ideal stress-strain relation, which is in good agreement with our experimental measurement of 0.59 MPa m 1/2 . We find that softening and breaking of the ionic Pb-Te bond leads to the structural collapse. To improve the mechanical strength of PbTe, we suggest strengthening the structural stiffness of the ionic Pb-Te framework through an alloying strategy, such as alloying PbTe with isotypic PbSe or PbS. This point defect strategy has a great potential to develop high-performance PbTe-based materials with robust mechanical properties, which may also be applied to other materials and applications.

Effect of reducing agent strength on the growth and thermoelectric performance of nanocrystalline bismuth telluride

NASA Astrophysics Data System (ADS)

Nour, Asmaa; Hassan, Nazly; Refaat, Heba M.; Soliman, Hesham M. A.; El-Dissouky, A.

2018-03-01

A novel combination of Trizma, as an environmentally friendly chelating agent, with either weak or strong reducing agent was used to produce n-type bismuth telluride (Bi2Te3) nanocrystals via water-based chemical route. The synthesized powders were consolidated into pellets utilizing spark plasma sintering (SPS). The sintered n-type pellets exhibited potentially high electrical conductivities (5.29 × 105 and 5.23 × 105 S.m‑1) and low lattice thermal conductivities (0.12 and 0.25 Wm‑1K‑1) respectively. These thermoelectric (TE) properties suggested that the partially coherent boundaries permitted significant phonons scattering and electrons transfer. These led to an enhanced figure-of-merit (ZT) values (0.52 and 0.97), which are considered to be significant among the reported ZT values at room-temperature for the undoped synthesized n-type Bi2Te3 nanoparticles. Therefore, the current investigation displayed an efficient method to improve ZT of TE materials via nanostructure orchestrating, resulting in a worthy candidate n-type nanostructured Bi2Te3 for room-temperature TE applications.

Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing.

PubMed

Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

2016-08-19

We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm(-1) K(-2)), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

DOE PAGES

Pettes, Michael Thompson; Kim, Jaehyun; Wu, Wei; ...

2016-07-25

We report the in-plane thermoelectric properties of suspended (Bi 1–xSb x) 2Te 3 nanoplates with x ranging from 0.07 to 0.95 and thicknesses ranging from 9 to 42 nm. The results presented here reveal a trend of increasing p-type behavior with increasing antimony concentration, and a maximum Seebeck coefficient and thermoelectric figure of merit at x ~ 0.5. We additionally tuned extrinsic doping of the surface using a tetrafluoro-tetracyanoquinodimethane (F 4-TCNQ) coating. As a result, the lattice thermal conductivity is found to be below that for undoped ultrathin Bi 2Te 3 nanoplates of comparable thickness and in the range ofmore » 0.2–0.7 W m –1 K –1 at room temperature.« less

Transport Properties of Bulk Thermoelectrics An International Round-Robin Study, Part I: Seebeck Coefficient and Electrical Resistivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hsin; Porter, Wallace D; Bottner, Harold

2013-01-01

Recent research and development of high temperature thermoelectric materials has demonstrated great potential of converting automobile exhaust heat directly into electricity. Thermoelectrics based on classic bismuth telluride have also started to impact the automotive industry by enhancing air conditioning efficiency and integrated cabin climate control. In addition to engineering challenges of making reliable and efficient devices to withstand thermal and mechanical cycling, the remaining issues in thermoelectric power generation and refrigeration are mostly materials related. The figure-of-merit, ZT, still needs to improve from the current value of 1.0 - 1.5 to above 2 to be competitive to other alternative technologies.more » In the meantime, the thermoelectric community could greatly benefit from the development of international test standards, improved test methods and better characterization tools. Internationally, thermoelectrics have been recognized by many countries as an important area for improving energy efficiency. The International Energy Agency (IEA) group under the implementing agreement for Advanced Materials for Transportation (AMT) identified thermoelectric materials as an important area in 2009. This paper is Part I of the international round-robin testing of transport properties of bulk thermoelectrics. The main focuses in Part I are on two electronic transport properties: Seebeck coefficient and electrical resistivity.« less

Thermopower of thermoelectric materials with resonant levels: PbTe:Tl versus PbTe:Na and Cu1 -xNix

NASA Astrophysics Data System (ADS)

Wiendlocha, Bartlomiej

2018-05-01

Electronic transport properties of thermoelectric materials containing resonant levels are discussed by analyzing the two best known examples: copper-nickel metallic alloy (Cu-Ni, constantan) and thallium-doped lead telluride (PbTe:Tl). As a contrasting example of a material with a nonresonant impurity, sodium-doped PbTe is considered. Theoretical calculations of the electronic structure, Bloch spectral functions, and energy-dependent electrical conductivity at T =0 K are done using the Korringa-Kohn-Rostoker method with the coherent potential approximation and the Kubo-Greenwood formalism. The effect of a resonance on the residual resistivity and electronic lifetimes in PbTe is analyzed. By using the full Fermi integrals, room-temperature thermopower is calculated, confirming its increase in PbTe:Tl versus PbTe:Na, due to the presence of the resonant level. In addition, our calculations support the self-compensation model, in which the experimentally observed reduction of carrier concentration in PbTe:Tl against the nominal one is explained by the presence of n -type Te vacancies.

Growth of lead tin telluride crystals in gels

NASA Technical Reports Server (NTRS)

Barber, Patrick G.

1986-01-01

Improved gels and several geometries were investigated for use in growing crystals. The use of lead sulfide test crystals proved workable, but it was impossible to obtain and maintain a sufficiently concentrated telluride ion solution to successfully grow lead telluride crystals. It appears that oxygen in the solution is capable of oxidizing the telluride ion up to tellurium metal. The method may still be successful, but only if precautions are taken to eliminate dissolved oxygen from the gels and aqueous solutions and to maintain a suitable concentration of telluride, Te(2)-(aq.).

Boundary Engineering for the Thermoelectric Performance of Bulk Alloys Based on Bismuth Telluride.

PubMed

Mun, Hyeona; Choi, Soon-Mok; Lee, Kyu Hyoung; Kim, Sung Wng

2015-07-20

Thermoelectrics, which transports heat for refrigeration or converts heat into electricity directly, is a key technology for renewable energy harvesting and solid-state refrigeration. Despite its importance, the widespread use of thermoelectric devices is constrained because of the low efficiency of thermoelectric bulk alloys. However, boundary engineering has been demonstrated as one of the most effective ways to enhance the thermoelectric performance of conventional thermoelectric materials such as Bi2 Te3 , PbTe, and SiGe alloys because their thermal and electronic transport properties can be manipulated separately by this approach. We review our recent progress on the enhancement of the thermoelectric figure of merit through boundary engineering together with the processing technologies for boundary engineering developed most recently using Bi2 Te3 -based bulk alloys. A brief discussion of the principles and current status of boundary-engineered bulk alloys for the enhancement of the thermoelectric figure of merit is presented. We focus mainly on (1) the reduction of the thermal conductivity by grain boundary engineering and (2) the reduction of thermal conductivity without deterioration of the electrical conductivity by phase boundary engineering. We also discuss the next potential approach using two boundary engineering strategies for a breakthrough in the area of bulk thermoelectric alloys. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Three-Dimensional Finite-Element Simulation for a Thermoelectric Generator Module

NASA Astrophysics Data System (ADS)

Hu, Xiaokai; Takazawa, Hiroyuki; Nagase, Kazuo; Ohta, Michihiro; Yamamoto, Atsushi

2015-10-01

A three-dimensional closed-circuit numerical model of a thermoelectric generator (TEG) module has been constructed with COMSOL® Multiphysics to verify a module test system. The Seebeck, Peltier, and Thomson effects and Joule heating are included in the thermoelectric conversion model. The TEG model is employed to simulate the operation of a 16-leg TEG module based on bismuth telluride with temperature-dependent material properties. The module is mounted on a test platform, and simulated by combining the heat conduction process and thermoelectric conversion process. Simulation results are obtained for the terminal voltage, output power, heat flow, and efficiency as functions of the electric current; the results are compared with measurement data. The Joule and Thomson heats in all the thermoelectric legs, as functions of the electric current, are calculated by finite-element volume integration over the entire legs. The Peltier heat being pumped at the hot side and released at the cold side of the module are also presented in relation to the electric current. The energy balance relations between heat and electricity are verified to support the simulation.

Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

NASA Astrophysics Data System (ADS)

Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

2017-05-01

The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

Thermoelectric materials ternary penta telluride and selenide compounds

DOEpatents

Sharp, Jeffrey W.

2001-01-01

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

Thermoelectric materials: ternary penta telluride and selenide compounds

DOEpatents

Sharp, Jeffrey W.

2002-06-04

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

Transport Properties of Bulk Thermoelectrics—An International Round-Robin Study, Part I: Seebeck Coefficient and Electrical Resistivity

NASA Astrophysics Data System (ADS)

Wang, Hsin; Porter, Wallace D.; Böttner, Harald; König, Jan; Chen, Lidong; Bai, Shengqiang; Tritt, Terry M.; Mayolet, Alex; Senawiratne, Jayantha; Smith, Charlene; Harris, Fred; Gilbert, Patricia; Sharp, Jeff W.; Lo, Jason; Kleinke, Holger; Kiss, Laszlo

2013-04-01

Recent research and development of high-temperature thermoelectric materials has demonstrated great potential for converting automobile exhaust heat directly into electricity. Thermoelectrics based on classic bismuth telluride have also started to impact the automotive industry by enhancing air-conditioning efficiency and integrated cabin climate control. In addition to engineering challenges of making reliable and efficient devices to withstand thermal and mechanical cycling, the remaining issues in thermoelectric power generation and refrigeration are mostly materials related. The dimensionless figure of merit, ZT, still needs to be improved from the current value of 1.0 to 1.5 to above 2.0 to be competitive with other alternative technologies. In the meantime, the thermoelectric community could greatly benefit from the development of international test standards, improved test methods, and better characterization tools. Internationally, thermoelectrics have been recognized by many countries as a key component for improving energy efficiency. The International Energy Agency (IEA) group under the Implementing Agreement for Advanced Materials for Transportation (AMT) identified thermoelectric materials as an important area in 2009. This paper is part I of the international round-robin testing of transport properties of bulk thermoelectrics. The main foci in part I are the measurement of two electronic transport properties: Seebeck coefficient and electrical resistivity.

Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te 125 NMR measurements in complex tellurides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levin, E. M.

Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n 2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T 1, depends on both n and m* as 1/T 1~(m*) 3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*) 2n 2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown thatmore » the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study Ag xSb xGe 50–2xTe 50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te 125 NMR measurements in complex tellurides

DOE PAGES

Levin, E. M.

2016-06-27

Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n 2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T 1, depends on both n and m* as 1/T 1~(m*) 3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*) 2n 2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown thatmore » the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study Ag xSb xGe 50–2xTe 50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

Power factor improvement and thermal conductivity reduction---By band engineering and modulation-doping in nanocomposites

NASA Astrophysics Data System (ADS)

Yu, Bo

Thermoelectrics, as one promising approach for solid-state energy conversion between heat and electricity, is becoming increasingly important within the last a couple of decades as the availability and negative environmental impact of fossil fuels draw increasing attention. Therefore, various thermoelectric materials in a wide working temperature range from room temperature to 1000 °C for power generation or below zero for cooling applications have been intensively studied. In general, the efficiency of thermoelectric devices relies on the dimensionless figure-of-merit (ZT) of the material, defined as ZT=(S2sigma)T/kappa, where S is the Seebeck coefficient, sigma the electrical conductivity, kappa the thermal conductivity (sum of the electronic part, the lattice part, and the bipolar contribution at high temperature region), and T the absolute temperature during operation. Techniques to measure those individual parameters will be discussed in the 2nd chapter while the 1 st chapter mainly covers the fundamental theory of thermoelectrics. Recently, the idea of using various nanostructured materials to further improve the ZT of conventional thermoelectric materials has led to a renewed interest. Among these types of nanostructured materials, nanocomposites which mainly denote for the nano-grained bulk materials or materials with nano-sized inclusions are the major focus of our study. For nanocomposites, the enhancement in ZT mainly comes from the low lattice thermal conductivity due to the suppressed phonon transport by those interfaces or structure features in the nanometer scale without deteriorating the electron transport. In the last few years, we have successfully demonstrated in several materials systems (Bismuth Telluride, Skutterudites, Silicon Germanium) that ball milling followed by hot pressing is an effective way for preparing large quantities of those nanocomposite thermoelectric materials with high ZT values in the bulk form. Therefore, in the 3rd part of this thesis, I will talk about how I applied the same technique to the Thalllium (Tl) doped Lead Telluride (PbTe) which was reported for an improved Seebeck coefficient due to the creation of resonant states near the Fermi level, leading to a high ZT of about 1.5 at around 500 °C. I showed that comparing with conventional tedious, energy consuming melting method, our fabrication process could produce such material with competing thermoelectric performance, but much simpler and more energy effective. Potential problems and perspectives for the future study are also discussed. The 4th chapter of my thesis deals with the challenge that in addition to those nanostructuring routes that mainly reduce the thermal conductivity to improve the performance, strategies to enhance the power factor (enhancing sigma or S or both) are also essential for the next generation of thermoelectric materials. In this part, modulation-doping which has been widely used in thin film semiconductor industry was studied in 3-D bulk thermoelectric nanocomposites to enhance the carrier mobility and therefore the electrical conductivity sigma. We proved in our study that by proper materials design, an improved power factor and a reduced thermal conductivity could be simultaneously obtained in the n-type SiGe nanocomposite material, which in turn gives an about 30% enhancement in the final ZT value. In order to further improve the materials performance or even apply this strategy to other materials systems, I also provided discussions at the end of chapter. In the last chapter, the structural and transport properties of a new thermoelectric compound Cu2Se was studied which was originally regarded as a superionic conductor. The beta-phase of such material possesses a natural superlattice-like structure, therefore resulting in a low lattice thermal conductivity of 0.4--0.5 Wm-1K-1 and a high peak ZT value of ˜1.6 at around 700 °C. I also studied the phase transition behavior between the cubic beta-phase and the tetragonal alpha-phase of such material from the discontinuity of transport property curves and the change in crystal structure. In addition, I also talk about the abnormal decrease in specific heat with increasing temperature that I observed in the as-prepared Cu2Se samples. I suggest this material is of general interest to a broad range of researchers in Physics, Chemistry, and Materials Science.

A Chemical, High-Temperature Way to Ag1.9Te via Quasi-Topotactic Reaction of Stuetzite-type Ag1.54Te: Structural and Thermoelectric Properties.

PubMed

Baumer, Franziska; Nilges, Tom

2017-11-20

Semiconducting silver tellurides gained reasonable interest in the past years due to its thermoelectric, magneto-caloric, and nonlinear optic properties. Nanostructuring has been frequently used to address quantum-confinement effects of minerals and synthetic compounds in the Ag-Te system. Here, we report on the structural, thermal, and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te. By a quasi-topotactic reaction upon tellurium evaporation Ag 1.54 Te can be transferred to Ag 1.9 Te after heat treatment. Crystal structures, thermal and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te were determined by ex situ and in situ experiments. This method represents an elegant chemical way to Ag 1.9 Te, which was so far only accessible electrochemically via electrochemical removal of silver from the mineral hessite (Ag 2 Te). The mixed conductors show reasonable high total electric conductivities, very low thermal conductivities, and large Seebeck coefficients, which result in a significant high thermoelectric figure of 0.57 at 680 K.

Sub-millisecond 125Te NMR spin-lattice relaxation times and large Knight shifts in complex tellurides: Validation of a quadratic relation across the spectrum

DOE PAGES

Levin, E. M.; Iowa State Univ., Ames, IA; Cui, J. -F.; ...

2016-07-16

125Te NMR spectra and spin-lattice relaxation times, T 1, have been measured for several GeTe-based materials with Te excess. In this paper, the spectra show inhomogeneous broadening by several thousand ppm and a systematic variation in T 1 relaxation time with resonance frequency. The quadratic dependence of the spin-lattice relaxation rate, 1/T 1, on the Knight shift in the Korringa relation is found to be valid over a wide range of Knight shifts. This result confirms that T 1 relaxation in GeTe-based materials is mostly dominated by hyperfine interaction between nuclei and free charge carriers. In GeTe with 2.5% excessmore » of Te, about 15% of the material exhibits a Knight shift of ≥4500 ppm and a T 1 of only 0.3 ms, indicating a high hole concentration that could correspond to close to 50% vacancies on the Ge sublattice in this component. Lastly, our findings provide a basis for determining the charge carrier concentration and its distribution in complex thermoelectric and phase-change tellurides, which should lead to a better understanding of electronic and thermal transport properties as well as chemical bonding in these materials.« less

Theoretical and experimental analyses to determine the effects of crystal orientation and grain size on the thermoelectric properties of oblique deposited bismuth telluride thin films

NASA Astrophysics Data System (ADS)

Morikawa, Satoshi; Satake, Yuji; Takashiri, Masayuki

2018-06-01

The effects of crystal orientation and grain size on the thermoelectric properties of Bi2Te3 thin films were investigated by conducting experimental and theoretical analyses. To vary the crystal orientation and grain size, we performed oblique deposition, followed by thermal annealing treatment. The crystal orientation decreased as the oblique angle was increased, while the grain size was not changed significantly. The thermoelectric properties were measured at room temperature. A theoretical analysis was performed using a first principles method based on density functional theory. Then the semi-classical Boltzmann transport equation was used in the relaxation time approximation, with the effect of grain size included. Furthermore, the effect of crystal orientation was included in the calculation based on a simple semi-experimental model. A maximum power factor of 11.6 µW/(cm·K2) was obtained at an oblique angle of 40°. The calculated thermoelectric properties were in very good agreement with the experimentally measured values.

Characterization of Hg1-xCdxTe heterostructures by thermoelectric measurements

NASA Astrophysics Data System (ADS)

Baars, J.; Brink, D.; Edwall, D. D.; Bubulac, L. O.

1993-08-01

P-on-n mercury cadmium telluride (MCT) heterostructures grown by MOCVD with As and In as n- and p-type dopants, respectively, are examined by measuring the Seebeck and Hall coefficients between 20 and 320K. The results are analyzed regarding doping and composition of the layers by least squares fitting the experimental profiles with the calculated temperature dependencies. The electron and hole densities of the layers are calculated taking into account Fermi-Dirac statistics, a nonparabolic conduction band, a parabolic valence band, a discrete acceptor level, and fully ionized donors. For the Seebeck coefficient, the relation we previously showed to be valid for p-type MCT1 is used. This relation relies on the thermoelectric effect in a temperature gradient resulting from the diffusion of nondegenerate carriers scattered by LO-phonons. It also fits the observed thermoelectric properties of n-type MCT in a wide temperature range. The doping and structural parameters determined from the thermoelectric measurements agreed very well with As and In profiles obtained from secondary ion mass spectroscopy measurements and the data obtained from analyses of infrared transmission measurements.

Bacterial recovery and recycling of tellurium from tellurium-containing compounds by Pseudoalteromonas sp. EPR3.

PubMed

Bonificio, W D; Clarke, D R

2014-11-01

Tellurium-based devices, such as photovoltaic (PV) modules and thermoelectric generators, are expected to play an increasing role in renewable energy technologies. Tellurium, however, is one of the scarcest elements in the earth's crust, and current production and recycling methods are inefficient and use toxic chemicals. This study demonstrates an alternative, bacterially mediated tellurium recovery process. We show that the hydrothermal vent microbe Pseudoalteromonas sp. strain EPR3 can convert tellurium from a wide variety of compounds, industrial sources and devices into metallic tellurium and a gaseous tellurium species. These compounds include metallic tellurium (Te(0)), tellurite (TeO3(2-)), copper autoclave slime, tellurium dioxide (TeO2), tellurium-based PV material (cadmium telluride, CdTe) and tellurium-based thermoelectric material (bismuth telluride, Bi2Te3). Experimentally, this was achieved by incubating these tellurium sources with the EPR3 in both solid and liquid media. Despite the fact that many of these tellurium compounds are considered insoluble in aqueous solution, they can nonetheless be transformed by EPR3, suggesting the existence of a steady state soluble tellurium concentration during tellurium transformation. These experiments provide insights into the processes of tellurium precipitation and volatilization by bacteria, and their implications on tellurium production and recycling. © 2014 The Society for Applied Microbiology.

Thermoelectric Coolers with Sintered Silver Interconnects

NASA Astrophysics Data System (ADS)

Kähler, Julian; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2014-06-01

The fabrication and performance of a sintered Peltier cooler (SPC) based on bismuth telluride with sintered silver interconnects are described. Miniature SPC modules with a footprint of 20 mm2 were assembled using pick-and-place pressure-assisted silver sintering at low pressure (5.5 N/mm2) and moderate temperature (250°C to 270°C). A modified flip-chip bonder combined with screen/stencil printing for paste transfer was used for the pick-and-place process, enabling high positioning accuracy, easy handling of the tiny bismuth telluride pellets, and immediate visual process control. A specific contact resistance of (1.4 ± 0.1) × 10-5 Ω cm2 was found, which is in the range of values reported for high-temperature solder interconnects of bismuth telluride pellets. The realized SPCs were evaluated from room temperature to 300°C, considerably outperforming the operating temperature range of standard commercial Peltier coolers. Temperature cycling capability was investigated from 100°C to 235°C over more than 200 h, i.e., 850 cycles, during which no degradation of module resistance or cooling performance occurred.

Composite-Nanoparticles Thermal History Sensors

DTIC Science & Technology

2014-05-01

al. Lead Telluride and Selenide Nanostructures Under Different Hydrothermal Synthesis Conditions Fig. 5. SEM image of PbTe solid nano- and micro-cubes...Lead Telluride and Selenide Nanostructures Under Different Hydrothermal Synthesis Conditions For the preparation of PbSe microflowers, a similar pro...R C H A R TIC LE Poudel et al. Lead Telluride and Selenide Nanostructures Under Different Hydrothermal Synthesis Conditions For the preparation of

The origin of incipient ferroelectricity in lead telluride

DOE PAGES

Jiang, M. P.; Trigo, M.; Savić, I.; ...

2016-07-22

The interactions between electrons and lattice vibrations are fundamental to materials behaviour. In the case of group IV–VI, V and related materials, these interactions are strong, and the materials exist near electronic and structural phase transitions. The prototypical example is PbTe whose incipient ferroelectric behaviour has been recently associated with large phonon anharmonicity and thermoelectricity. Here we show that it is primarily electron-phonon coupling involving electron states near the band edges that leads to the ferroelectric instability in PbTe. Using a combination of nonequilibrium lattice dynamics measurements and first principles calculations, we find that photoexcitation reduces the Peierls-like electronic instabilitymore » and reinforces the paraelectric state. This weakens the long-range forces along the cubic direction tied to resonant bonding and low lattice thermal conductivity. Lastly, our results demonstrate how free-electron-laser-based ultrafast X-ray scattering can be utilized to shed light on the microscopic mechanisms that determine materials properties.« less

Reduction of Specimen Size for the Full Simultaneous Characterization of Thermoelectric Performance

NASA Astrophysics Data System (ADS)

Vasilevskiy, D.; Simard, J.-M.; Masut, R. A.; Turenne, S.

2017-05-01

The successful implementation of thermoelectric (TE) materials for waste heat recovery depends strongly on our ability to increase their performance. This challenge continues to generate a renewed interest in novel high TE performance compounds. The technological difficulties in producing homogeneous ingots of new compounds or alloys with regular shape and a size sufficiently large to prepare several samples that are usually needed for a separate measurement of all TE parameters are well known. It creates a situation whereby material performance could be critically over- or under-evaluated at the first stages of the research process of a new material. Both cases would equally lead to negative consequences. Thus, minimizing the specimen size yet keeping it adequate for accurate material characterization becomes extremely important. In this work we report the experimental validation of reliable simultaneous measurements of the four most relevant TE parameters on a single bismuth telluride alloy based specimen of 4 mm × 4 mm × 1.4 mm in size. This translates in roughly 140 mg in weight for one of the heaviest TE materials, as was used in this study, and <100 mg for most others. Our validation is based on comparative measurements performed by a Harman apparatus (ZT-Scanner) on a series of differently sized specimens of hot extruded bismuth telluride based alloys. The Seebeck coefficient, electrical resistivity, thermal conductivity and the figure of merit were simultaneously assessed from 300 K to 440 K with increments of 20 K, 15 K, 10 K, 5 K, and 1 K. Our choice of a well-known homogeneous material has been made to increase measurement reliability and accuracy, but the results are expected to be valid for the full TE characterization of any unknown material. These results show a way to significantly decrease specimen sizes which has the potential to accelerate investigation of novel TE materials for large scale waste heat recovery.

Thermoelectric Transport in Surface- and Antimony-Doped Bismuth Telluride Nanoplates

DTIC Science & Technology

2016-07-25

0.50) using two different electron microscopes with two different high sensitivity energy dispersive x-ray spectroscopy (EDS) detectors (FEI Nova...Figure 1(b)) using an electrochemically sharpened probe. Transfer was performed in ambient conditions under an optical microscope . Samples were then...attributed to additional alloy scattering in the (Bi1−xSbx)2Te3 samples studied here. Additionally, the room temperature κlattice for bulk compounds Reuse of

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

NASA Astrophysics Data System (ADS)

Wang, H.; Leonard, K. J.

2017-07-01

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This study is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 1018 n/cm2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300-400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. These results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.

Modulation of charge transport properties in poly(3,4-ethylenedioxythiophene) nanocomposites for thermoelectric applications

NASA Astrophysics Data System (ADS)

Galliani, Daniela; Battiston, Simone; Ruffo, Riccardo; Trabattoni, Silvia; Narducci, Dario

2018-01-01

Conjugated polymer poly(3,4-dioxyethylenthiofene) (PEDOT) has recently gained attention for room-temperature thermoelectric applications due to its low cost, safety and the possibility of easy processing. This makes it an interesting prospective alternative to tellurides commonly used around room temperature. Still, low thermoelectric efficiencies of polymers might be more easily increased, were a model of its transport properties available. The aim of this paper is to validate a model recently reported, making use of the concept of transport energy to frame the onset of transport properties reported over the last few years in the literature. To this aim, PEDOT and PEDOT-based nanocomposites embedding CuO nanoplatelets were prepared and analysed. We found that the model adequately fits the trends observed in pure PEDOT and in its nanocomposites. Transport and Fermi energy were verified to depend on the polymer oxidation level only,while the transport coefficient was found to be sensitive to PEDOT stacking and was modulated by the introduction of CuO nanoplatelets.

High-Oriented Thermoelectric Nano-Bulk Fabricated from Thermoelectric Ink

NASA Astrophysics Data System (ADS)

Koyano, M.; Mizutani, S.; Hayashi, Y.; Nishino, S.; Miyata, M.; Tanaka, T.; Fukuda, K.

2017-05-01

Printing technology is expected to provide innovative and environmentally friendly processes for thermoelectric (TE) module fabrication. As described in this paper, we propose an orientation control process using plastic deformation at high temperatures and present high-oriented TE nano-bulks fabricated from bismuth telluride (Bi-Te) TE inks using this process. In the case of n-type Bi-Te, surface x-ray diffraction reveals that crystalline grains in the plastic-deformed nano-bulk demonstrate a c-plane orientation parallel to the pressed face. According to the high orientation, electrical resistivity ρ, thermal conductivity κ, and figure of merit ZT show anisotropic behavior. It is noteworthy that ( ZT)// almost reaches unity ( ZT)// ˜1 at 340 K, even at low temperatures of the plastic deformation process. In contrast, the ZT of plastic-deformed p-type nano-bulk indicates isotropic behavior. The difference in the process temperature dependence of ZT suggests that n-type and p-type nano-bulk orientation mechanisms mutually differ.

Assessment of a Thermoelectric Vest through Physical and Mental Performance

DTIC Science & Technology

2012-04-01

system is a sandwich- type structure of doped bismuth telluride (Bi2Te3) soldered between two ceramic plates. Bi2Te3 acts as a semiconductor and after... doping , the material becomes an efficient TE. Variations in doping create P-N junctions throughout the TE. Figure 3 shows a schematic of a TE...Excalibur Sport Ergonometer was used to increase subject’s core body temperature. The Excalibur Sport is a multi-adjustable ergonometer and is

Energy Harvesting & Recapture from Human Subjects: Dual-Stage MEMS Cantilever Energy Harvester

DTIC Science & Technology

2015-03-01

15 Figure 5. (a) In-plane overlap-varying capacitive harvester, (b) In-plane gap-closing capacitive harvester, (c) Out -of-plane gap-closing...capacitive harvester, (c) Out -of-plane gap-closing capacitive harvester [1] The two-way arrows in each subpart of Figure 5 indicate the shuttle’s direction...are compatible with other wafer -based technologies. Bismuth Telluride (Bi2Te3), a common Seebeck thermoelectric material, is able to be processed

Thermoelectric properties, Shubnikov-de Haas effect and mobility of charge carriers in bismuth antimony tellurides and selenides and nanocomposite based on these materials

NASA Astrophysics Data System (ADS)

Kulbachinskii, V. A.; Kytin, V. G.; Kudryashov, A. A.; Lunin, R. A.; Banerjee, A.

2017-04-01

We describe here the study of the Shubnikov-de Haas effect and thermoelectric properties of p-(Bi0.5Sb0.5)2Te3 single crystals doped with Ga, n-Bi2-xTlxSe3 and p-Sb2-xTlxTe3. Using Fourier spectra of the oscillations we calculated the mobility of charge carriers and its variation upon doping. We found that Ga has a donor effect in p-(Bi0.5Sb0.5)2Te3, Tl is an acceptor in n-Bi2-xTlxSe3 and increases the mobility of electrons, while in p-Sb2-xTlxTe3, Tl is a donor and decreases the mobility of holes. We consider the evolution of the defectiveness of crystals that leads to the observed effects. We also synthesized and investigated nanocomposites of solid solutions Sb2Te3-xSex (0 < x < 1). When Se concentration increases in Sb2Te3-xSex, the concentration of holes decreases. At the same time the Seebeck coefficient decreases. This is not typical for semiconductors but correlates with the earlier data. A theoretical model was developed to calculate simultaneously the dependences of the Seebeck coefficient, Hall coefficient and conductivity on the selenium concentration x. Calculations showed that for a simultaneous quantitative description of the thermoelectric and galvanomagnetic data it is necessary to take into consideration both the evolution of the band structure of Sb2Te3-xSex and partial localization of holes.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE PAGES

Wang, H.; Leonard, K. J.

2017-07-25

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

PubMed

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-03-23

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge 20 Te 77 Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge 20 Te 77 Se₃) 100- x M x (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge 20 Te 77 Se₃) 100- x Bi x ( x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm -1 K -1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, H.; Leonard, K. J.

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-05-01

Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

Thermoelectric Energy Conversion Technology for High-Altitude Airships

NASA Technical Reports Server (NTRS)

Choi, Sang H.; Elliott, James R.; King, Glen C.; Park, Yeonjoon; Kim, Jae-Woo; Chu, Sang-Hyon

2011-01-01

The High Altitude Airship (HAA) has various application potential and mission scenarios that require onboard energy harvesting and power distribution systems. The power technology for HAA maneuverability and mission-oriented applications must come from its surroundings, e.g. solar power. The energy harvesting system considered for HAA is based on the advanced thermoelectric (ATE) materials being developed at NASA Langley Research Center. The materials selected for ATE are silicon germanium (SiGe) and bismuth telluride (Bi2Te3), in multiple layers. The layered structure of the advanced TE materials is specifically engineered to provide maximum efficiency for the corresponding range of operational temperatures. For three layers of the advanced TE materials that operate at high, medium, and low temperatures, correspondingly in a tandem mode, the cascaded efficiency is estimated to be greater than 60 percent.

International Round-Robin Study on Thermoelectric Transport Properties of n-type Half-Heusler from 300 K to 773 K

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hsin; Bai, Shengqiang; Chen, Lidong

2015-09-03

International transport property measurement round-robins have been conducted by the Thermoelectric Annex under the International Energy Agency (IEA) Implementing Agreement on Advanced Materials for Transportation (AMT). The previous round-robins used commercially available bismuth telluride as the testing material, with the goals of understanding measurement issues and developing standard testing procedures. The current round-robin extended the measurement temperature range to 773 K. It was designed to meet the increasing demands for reliable transport data of thermoelectric materials for power generation applications. Eleven laboratories from six IEA-AMT member countries participated in this study. Half-Heusler (n-type) material prepared by GMZ Energy was selectedmore » for the round-robin. The measured transport properties showed narrower distribution on uncertainties compared to previous round-robin efforts. The study intentionally included multiple testing methods and instrument types. Over the full temperature range, the measurement discrepancies on the figure of merit, ZT, in this round-robin were ±1.5 to ±16.4% from the averages.« less

Scanning tunneling spectroscopy of the surface states of Dirac fermions in thermoelectrics based on bismuth telluride

NASA Astrophysics Data System (ADS)

Lukyanova, L. N.; Makarenko, I. V.; Usov, O. A.; Dementev, P. A.

2018-05-01

The morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi2‑xSbxTe3‑ySey solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. The topological characteristics of the Dirac fermion surface states were determined. It was shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with the increasing of atomic substitution in these thermoelectrics. A correlation between topological characteristics, power factor and material parameters was found. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at x > 1.5 and small substitutions in the Te sublattice (y = 0.06). In compositions with smaller substitutions at x = (1–1.3) and y = (0.06–0.09), similar effect of the surface states is determined by raising the surface concentration of charge carriers.

Preparation and Thermoelectric Properties of Graphite/Bi0.5Sb1.5Te3 Composites

NASA Astrophysics Data System (ADS)

Hu, Wenhua; Zhou, Hongyu; Mu, Xin; He, Danqi; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-06-01

Bismuth telluride zone-melting alloys are the most commercially used thermoelectric materials. However, the zone-melting ingots have weak machinability due to the strong preferred orientation. Here, non-textured graphite/Bi0.5Sb1.5Te3 (G/BST) composites were prepared by a powder metallurgy method combined with cold-pressing and annealing treatments. The composition, microstructure, and thermoelectric properties of the G/BST composites with different mass percentages of G were investigated. It was found that G addition could effectively reduce the thermal conductivity and slightly improve the electrical properties of the BST, which resulted in a large enhancement in the figure-of-merit, ZT. The largest ZT for the xG/BST composites with x = 0.05% reached 1.05 at 320 K, which is increased by 35% as compared with that of the G-free BST materials. This work provided an effective method for preparing non-textured Bi2Te3-based TE materials with a simple process, low cost, and large potential in scale production.

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

NASA Astrophysics Data System (ADS)

Kim, Jaehyun; Evans, Daniel A.; Sellan, Daniel P.; Williams, Owen M.; Ou, Eric; Cowley, Alan H.; Shi, Li

2016-05-01

Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m-1 K-1 is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.

Thermoelectric properties of nanocrystalline Sb2Te3 thin films: experimental evaluation and first-principles calculation, addressing effect of crystal grain size.

PubMed

Morikawa, Satoshi; Inamoto, Takuya; Takashiri, Masayuki

2018-02-16

The effect of crystal grain size on the thermoelectric properties of nanocrystalline antimony telluride (Sb 2 Te 3 ) thin films was investigated by experiments and first-principles studies using a developed relaxation time approximation. The Sb 2 Te 3 thin films were deposited on glass substrates using radio-frequency magnetron sputtering. To change the crystal grain size of the Sb 2 Te 3 thin films, thermal annealing was performed at different temperatures. The crystal grain size, lattice parameter, and crystal orientation of the thin films were estimated using XRD patterns. The carrier concentration and in-plane thermoelectric properties of the thin films were measured at room temperature. A theoretical analysis was performed using a first-principles study based on density functional theory. The electronic band structures of Sb 2 Te 3 were calculated using different lattice parameters, and the thermoelectric properties were predicted based on the semi-classical Boltzmann transport equation in the relaxation time approximation. In particular, we introduced the effect of carrier scattering at the grain boundaries into the relaxation time approximation by estimating the group velocities from the electronic band structures. Finally, the experimentally measured thermoelectric properties were compared with those obtained by calculation. As a result, the calculated thermoelectric properties were found to be in good agreement with the experimental results. Therefore, we can conclude that introducing the effect of carrier scattering at the grain boundaries into the relaxation time approximation contributes to enhance the accuracy of a first-principles calculation relating to nanocrystalline materials.

Thermoelectric properties of nanocrystalline Sb2Te3 thin films: experimental evaluation and first-principles calculation, addressing effect of crystal grain size

NASA Astrophysics Data System (ADS)

Morikawa, Satoshi; Inamoto, Takuya; Takashiri, Masayuki

2018-02-01

The effect of crystal grain size on the thermoelectric properties of nanocrystalline antimony telluride (Sb2Te3) thin films was investigated by experiments and first-principles studies using a developed relaxation time approximation. The Sb2Te3 thin films were deposited on glass substrates using radio-frequency magnetron sputtering. To change the crystal grain size of the Sb2Te3 thin films, thermal annealing was performed at different temperatures. The crystal grain size, lattice parameter, and crystal orientation of the thin films were estimated using XRD patterns. The carrier concentration and in-plane thermoelectric properties of the thin films were measured at room temperature. A theoretical analysis was performed using a first-principles study based on density functional theory. The electronic band structures of Sb2Te3 were calculated using different lattice parameters, and the thermoelectric properties were predicted based on the semi-classical Boltzmann transport equation in the relaxation time approximation. In particular, we introduced the effect of carrier scattering at the grain boundaries into the relaxation time approximation by estimating the group velocities from the electronic band structures. Finally, the experimentally measured thermoelectric properties were compared with those obtained by calculation. As a result, the calculated thermoelectric properties were found to be in good agreement with the experimental results. Therefore, we can conclude that introducing the effect of carrier scattering at the grain boundaries into the relaxation time approximation contributes to enhance the accuracy of a first-principles calculation relating to nanocrystalline materials.

Enhanced thermoelectric performance in ternary spinel Cu4Mn2Te4via the synergistic effect of tellurium deficiency and chlorine doping.

PubMed

Chen, Hong; Lin, Hua; Liu, Yi; Wu, Xin-Tao; Wu, Li-Ming

2017-11-07

The chemistry of copper-based chalcogenides has received considerable attention due to their diverse structures and potential applications in the area of thermoelectric (TE) materials. In this communication, a series of spinel-type Cu 4 Mn 2 Te 4 -based samples have been successfully prepared and their high TE performances are attributed to the enhanced power factor and low thermal conductivity via the synergistic effect of Te deficiency and Cl doping. Consequently, a maximum TE figure of merit (ZT) of ∼0.4 was achieved for the Cu 4 Mn 2 Te 3.93 Cl 0.03 sample at 700 K, which was about 100% enhanced in comparison with the undoped Cu 4 Mn 2 Te 4 sample and one of the highest ZT values reported for p-type spinel tellurides.

Terrestrial growth of lead-tin-telluride by techniques related to low G growth

NASA Technical Reports Server (NTRS)

Jesser, W. A.

1982-01-01

A modified Bridgman-Stockbarger furnace was constructed for a study of the solidification of silver, germanium and lead-tin-telluride. The melt-solid interface position with respect to the furnace and its temperature profile was determined by measuring the discontinuity in the slope of temperature as a function of position in the melt and in the solid. The results show that the interface position of the semiconductors germanium and lead-tin-telluride was essentially constant with respect to the furnace and hence the growth rate was constant and equal to the sample translation rate of 0.046 cm/min and 0.178 cm/min in each case. The metal, silver, on the other hand showed a continuous interface migration toward the hot zone of the furnace and always exhibited a growth rate which was higher than the ampoule translation rate. The K sub L/K sub S ratio of lead-tin-telluride was determined to be 2.33 + or - 0.06 where K sub L,S denotes the thermal conductivity of the liquid, solid respectively. The value of K sub L was calculated to be about 0.054 Watt 0.1 cm 0.1 K. The diffusion boundary layer thickness was calculated for lead-tin-telluride to be about 0.05 cm using a liquid diffusivity of .00007 sq cm/sec.

Extended Abstracts. The U.S. Workshop on the Physics and Chemistry of Mercury Cadium Telluride and Novel IR Detector Materials, Held in San Francisco, California on October 2-4, 1990

DTIC Science & Technology

1990-10-01

WORKSHOP COORDINATOR J . Morreale Palisades Institute for Research Services, Inc. WORKSHOP SPONSORS CECOM Center for NV&EO Office of Naval Technology Air...LPE HgCdTe ON SAPPHIRE ................... 33 E.R. Blazejewski, S. Johnston, J.S. Chen, J . Bajaj, G. Williams and L. Bubulac, Rockwell Science Center...ACCEPTOR DENSITIES IN P-TYPE Hgl-xCdxTe BY THERMOELECTRIC MEASUREMENTS ................................... . ........ 63 J . Baars, D. Brink and J

Study of a thermoelectric system equipped with a maximum power point tracker for stand-alone electric generation.

NASA Astrophysics Data System (ADS)

Favarel, C.; Champier, D.; Bédécarrats, J. P.; Kousksou, T.; Strub, F.

2012-06-01

According to the International Energy Agency, 1.4 billion people are without electricity in the poorest countries and 2.5 billion people rely on biomass to meet their energy needs for cooking in developing countries. The use of cooking stoves equipped with small thermoelectric generator to provide electricity for basic needs (LED, cell phone and radio charging device) is probably a solution for houses far from the power grid. The cost of connecting every house with a landline is a lot higher than dropping thermoelectric generator in each house. Thermoelectric generators have very low efficiency but for isolated houses, they might become really competitive. Our laboratory works in collaboration with plane`te-bois (a non governmental organization) which has developed energy-efficient multifunction (cooking and hot water) stoves based on traditional stoves designs. A prototype of a thermoelectric generator (Bismuth Telluride) has been designed to convert a small part of the energy heating the sanitary water into electricity. This generator can produce up to 10 watts on an adapted load. Storing this energy in a battery is necessary as the cooking stove only works a few hours each day. As the working point of the stove varies a lot during the use it is also necessary to regulate the electrical power. An electric DC DC converter has been developed with a maximum power point tracker (MPPT) in order to have a good efficiency of the electronic part of the thermoelectric generator. The theoretical efficiency of the MMPT converter is discussed. First results obtained with a hot gas generator simulating the exhaust of the combustion chamber of a cooking stove are presented in the paper.

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaehyun; Sellan, Daniel P.; Ou, Eric

2016-05-16

Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phononmore » scattering. The room temperature value of (186 ± 46) W m{sup −1 }K{sup −1} is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.« less

Performance of a Thermoelectric Device with Integrated Heat Exchangers

NASA Astrophysics Data System (ADS)

Barry, Matthew M.; Agbim, Kenechi A.; Chyu, Minking K.

2015-06-01

Thermoelectric devices (TEDs) convert heat directly into electrical energy, making them well suited for waste heat recovery applications. An integrated thermoelectric device (iTED) is a restructured TED that allows more heat to enter the p-n junctions, thus producing a greater power output . An iTED has heat exchangers incorporated into the hot-side interconnectors with flow channels directing the working fluid through the heat exchangers. The iTED was constructed of p- and n-type bismuth-telluride semiconductors and copper interconnectors and rectangular heat exchangers. The performance of the iTED in terms of , produced voltage and current , heat input and conversion efficiency for various flow rates (), inlet temperatures (C) ) and load resistances () with a constant cold-side temperature ( = 0C) was conducted experimentally. An increase in had a greater effect on the performance than did an increase in . A 3-fold increase in resulted in a 3.2-, 3.1-, 9.7-, 3.5- and 2.8-fold increase in and respectively. For a constant of 50C, a 3-fold increase in from 3300 to 9920 resulted in 1.6-, 1.6-, 2.6-, 1.5- and 1.9-fold increases in , , , and respectively.

Taguchi optimization of bismuth-telluride based thermoelectric cooler

NASA Astrophysics Data System (ADS)

Anant Kishore, Ravi; Kumar, Prashant; Sanghadasa, Mohan; Priya, Shashank

2017-07-01

In the last few decades, considerable effort has been made to enhance the figure-of-merit (ZT) of thermoelectric (TE) materials. However, the performance of commercial TE devices still remains low due to the fact that the module figure-of-merit not only depends on the material ZT, but also on the operating conditions and configuration of TE modules. This study takes into account comprehensive set of parameters to conduct the numerical performance analysis of the thermoelectric cooler (TEC) using a Taguchi optimization method. The Taguchi method is a statistical tool that predicts the optimal performance with a far less number of experimental runs than the conventional experimental techniques. Taguchi results are also compared with the optimized parameters obtained by a full factorial optimization method, which reveals that the Taguchi method provides optimum or near-optimum TEC configuration using only 25 experiments against 3125 experiments needed by the conventional optimization method. This study also shows that the environmental factors such as ambient temperature and cooling coefficient do not significantly affect the optimum geometry and optimum operating temperature of TECs. The optimum TEC configuration for simultaneous optimization of cooling capacity and coefficient of performance is also provided.

Role of chemically and thermally induced crystal lattice distortion in enhancing the Seebeck coefficient in complex tellurides

DOE PAGES

Levin, E. M.; Iowa State Univ., Ames, IA; Kramer, M. J.; ...

2016-07-14

Composition and crystal structure of complex materials can significantly change the Seebeck effect, i.e., heat to electrical energy conversion, which is utilized in thermoelectric materials. Despite decades of studies of various thermoelectric materials and their application, the fundamental understanding of this effect still is limited. One of the most efficient groups of thermoelectric materials is based on GeTe, where Ge is replaced by [Ag + Sb], i.e., Ag xSb xGe 50-2xTe 50 alloys, traditionally shown as (GeTe) m(AgSbTe 2) 100-m (TAGS-m series). Here, in this article, we report on the discovery of two unique phenomena in TAGS materials attributed tomore » the effects from [Ag + Sb] atoms: (i) a linear relation between the Seebeck coefficient and rhombohedral lattice distortion, and (ii) resonance-like temperature-induced behavior of the contribution to the Seebeck coefficient produced by [Ag + Sb] atoms. Finally, our findings show that heat to electrical energy conversion strongly depends on the temperature- and compositionally-induced rhombohedral to cubic transformation where [Ag + Sb] atoms play a crucial mediating role.« less

A new solution chemical method to make low dimensional thermoelectric materials

NASA Astrophysics Data System (ADS)

Ding, Zhongfen

2001-11-01

Bismuth telluride and its alloys are currently the best thermoelectric materials known at room temperature and are therefore used for portable solid-state refrigeration. If the thermal electric figure of merit ZT could be improved by a factor of about 3, quiet and rugged solid-state devices could eventually replace conventional compressor based cooling systems. In order to test a theory that improved one-dimensional or two-dimensional materials could enhance ZT due to lower thermal conductivity, we are developing solution processing methods to make low dimensional materials. Bismuth telluride and its p-type and n-type alloys have layered structures consisting of 5 atom thick Te-Bi-Te-Bi-Te sheets, each sheet about 10 A thick. Lithium ions are intercalated into the layered materials using liquid ammonia. The lithium-intercalated materials are then exfoliated in water to form colloidal suspensions with narrow particle size distributions and are stable for more than 24 hours. The layers are then deposited on substrates, which after annealing at low temperatures, form highly c-axis oriented thin films. The exfoliated layers can potentially be restacked with other ions or layered materials in between the sheets to form novel structures. The restacked layers when treated with nitric acid and sonication form high yield nanorod structured materials. This new intercalation and exfoliation followed by sonication method could potentially be used for many other layered materials to make nanorod structured materials. The low dimensional materials are characterized by powder X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), scanning electron microscopy (SEM), inductively coupled plasma (ICP) and dynamic light scattering.

Electrodeposition of bismuth:tellurium nanowire arrays into porous alumina templates for thermoelectric applications

NASA Astrophysics Data System (ADS)

Trahey, Lynn

Bismuth telluride is a well-known thermoelectric material for refrigeration applications. Thermoelectrics possess several advantages over conventional refrigeration and power generation devices, yet are not widely-used due to low efficiencies. It has been predicted and shown experimentally that the efficiency of thermoelectric devices increases when the semiconducting materials have reduced dimensions. Therefore, the aim of this research was to show enhanced thermoelectric efficiency in one-dimensional nanowires. The nanowires were synthesized via electrochemical deposition into porous alumina templates. Electrodeposition is a versatile technique that ensures electrical continuity in the deposited material. The nanowire templates, porous alumina, were made by the double anodization of high-purity aluminum foil in oxalic acid solutions. This technique produces parallel, hexagonally packed, and nanometer-range diameter pores that can reach high aspect ratios (greater than 2000:1). The main anodization variables (electrolyte concentration, applied potential, 2nd anodization time, and temperature) were studied systematically in order to deconvolute their effects on the resulting pores and to obtain high aspect ratio pores. The porous alumina is of great importance because the pore dimensions determine the dimensions of the electrodeposited nanowires, which influence the thermoelectric performance of the nanowire arrays. Nanowire arrays were characterized in several ways. Powder X-ray diffraction was used to assess crystallinity and preferred orientation of the nanowires, revealing that the nanowires are highly crystalline and grow with strong preferred orientation such that the material is suited for optimal thermoelectric performance. Scanning electron microscopy was used to evaluate the nanowire nucleation percentage and growth-front uniformity, both of which were enhanced by pulsed-potential electrodeposition. Compositional analysis via electron microprobe indicates that the as-grown nanowires are Te-rich or Bi-deficient, which agrees with Seebeck coefficient data showing the arrays are n-type semiconductors. In collaboration with Marlow Industries, the thermoelectric performance of the arrays was gauged. The nanowire arrays were successfully contacted with robust nickel layers as revealed by the low AC resistances of the arrays. One array was incorporated into a hybrid thermoelectric device and a DeltaT of 14.8°C was measured, indicating that the measurement and electrical contact approaches were successful despite further optimization being needed.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions

NASA Astrophysics Data System (ADS)

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B. S.; Suwas, Satyam; Mallik, Ramesh Chandra

2018-03-01

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

High Thermoelectric Performance in Copper Telluride

DOE PAGES

He, Ying; Zhang, Tiansong; Shi, Xun; ...

2015-06-21

Recently, Cu 2-δ S and Cu 2-δ Se were reported to have an ultralow thermal conductivity and high thermoelectric figure of merit zT. Thus, as a member of the copper chalcogenide group, Cu 2-δ Te is expected to possess superior zTs because Te is less ionic and heavy. However, the zT value is low in the Cu 2Te sintered using spark plasma sintering, which is typically used to fabricate high-density bulk samples. In addition, the extra sintering processes may change the samples’ compositions as well as their physical properties, especially for Cu 2Te, which has many stable andmore » meta-stable phases as well as weaker ionic bonding between Cu and Te as compared with Cu 2S and Cu 2Se. In this study, high-density Cu 2Te samples were obtained using direct annealing without a sintering process. In the absence of sintering processes, the samples’ compositions could be well controlled, leading to substantially reduced carrier concentrations that are close to the optimal value. The electrical transports were optimized, and the thermal conductivity was considerably reduced. The zT values were significantly improved—to 1.1 at 1000 K—which is nearly 100% improvement. Furthermore, this method saves substantial time and cost during the sample’s growth. The study demonstrates that Cu 2-δ X (X=S, Se and Te) is the only existing system to show high zTs in the series of compounds composed of three sequential primary group elements.« less

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

PubMed

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-02-12

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

Ambient temperature thermoelectric performance of thermally evaporated p-type Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-04-01

Bismuth antimony telluride (BST) compounds have shown a promising performance in low to medium temperature thermoelectric (TE) conversion. One such composition, Bi1.2Sb0.8Te3, was synthesized by melting elemental entities and thin films of the as-synthesized material were deposited by thermal evaporation. X-Ray Diffraction analysis was conducted to study the crystallographic phases and other structural properties. Electrical conductivity and Seebeck coefficient measurements of as-prepared thin films were conducted in the temperature range from 303-363 K with a view to study ambient temperature application of the synthesized material for power generation in which an increasing trend was observed in the Seebeck coefficient. Electrical conductivity displayed a maximum value of 0.22 × 104 Sm-1 that was comparable to other Bi-Sb-Te compositions whereas power factor had its peak at 323 K. These trends observed in electrical properties indicate that synthesized material can be used for room temperature TE module fabrication.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

NASA Astrophysics Data System (ADS)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing techniques, the thermal conductivity may be reduced in order to increase the thermoelectric gure of merit. Further reduction in thermal conductivity using other novel approaches is identied as an area of promising future research. Continued development of this material has the potential to generate a suitable replacement for some low temperature applications, but will certainly further scientic knowledge and understanding of the optimization of thermoelectric materials in this temperature regime.

Analysis of the Effect of Module Thickness Reduction on Thermoelectric Generator Output

NASA Astrophysics Data System (ADS)

Brito, F. P.; Figueiredo, L.; Rocha, L. A.; Cruz, A. P.; Goncalves, L. M.; Martins, J.; Hall, M. J.

2016-03-01

Conventional thermoelectric generators (TEGs) used in applications such as exhaust heat recovery are typically limited in terms of power density due to their low efficiency. Additionally, they are generally costly due to the bulk use of rare-earth elements such as tellurium. If less material could be used for the same output, then the power density and the overall cost per kilowatt (kW) of electricity produced could drop significantly, making TEGs a more attractive solution for energy harvesting of waste heat. The present work assesses the effect of reducing the amount of thermoelectric (TE) material used (namely by reducing the module thickness) on the electrical output of conventional bismuth telluride TEGs. Commercial simulation packages (ANSYS CFX and thermal-electric) and bespoke models were used to simulate the TEGs at various degrees of detail. Effects such as variation of the thermal and electrical contact resistance and the component thickness and the effect of using an element supporting matrix (e.g., eggcrate) instead of having air conduction in void areas have been assessed. It was found that indeed it is possible to reduce the use of bulk TE material while retaining power output levels equivalent to thicker modules. However, effects such as thermal contact resistance were found to become increasingly important as the active TE material thickness was decreased.

New PbSnTe heterojunction laser diode structures with improved performance

NASA Technical Reports Server (NTRS)

Fonstad, C. G.; Kasemset, D.; Hsieh, H. H.; Rotter, S.

1980-01-01

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

In situ deformation and mechanical properties of bismuth telluride prepared via zone melting

NASA Astrophysics Data System (ADS)

Lai, Tang-Yu; Hsiao, Yu-Jen; Fang, Te-Hua

2018-03-01

In this study, we prepared Bi2Te3 nanostructures via zone melting and characterized their mechanical properties by nanoindentation and in situ transmission electron microscopy (TEM). The nanoindentation results revealed that a significant ‘pop-in’ phenomenon occurs under high-loading conditions with multiple dislocations and phase transitions in the material structure. Young’s modulus of the nanostructures was found to be 42.7 ± 2.56 GPa from nanoindentation measurements and 12.3 ± 0.1 GPa from in situ TEM measurements. The results of this study may be useful for the future development of Bi2Te3 thermoelectric devices via printing processes.

Thermoelectric properties of Co₄Sb₁₂ with Bi₂Te₃ nanoinclusions.

PubMed

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-01-08

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

Towards a predictive route for selection of doping elements for the thermoelectric compound PbTe from first-principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joseph, Elad; Amouyal, Yaron, E-mail: amouyal@technion.ac.il

2015-05-07

Striving for improvements of the thermoelectric (TE) properties of the technologically important lead telluride (PbTe) compound, we investigate the influence of different doping elements on the thermal conductivity, Seebeck coefficient, and electrical conductivity applying density functional theory calculations. Our approach combines total-energy calculations yielding lattice vibrational properties with the Boltzmann transport theory to obtain electronic transport properties. We find that doping with elements from the 1st and 3rd columns of the periodic table reduces the sound velocity and, consequently, the lattice thermal conductivity, while 2nd column dopants have no such influence. Furthermore, 1.6 at. % doping with 4th and 5th columnmore » elements provides the highest reduction of lattice thermal conductivity. Out of this group, Hf doping results in maximum reduction of the sound velocity from 2030 m s{sup −1} for pure PbTe to 1370 m s{sup −1}, which is equivalent to ca. 32% reduction of lattice thermal conductivity. The highest power factor values calculated for 1.6 at. % doping range between 40 and 56 μW cm{sup −1} K{sup −2}, and are obtained for substitution with dopants having the same valence as Pb or Te, such as those located at the 2nd, 14th, and 16th columns of the periodic table. We demonstrate how this method may be generalized for dopant-selection-oriented materials design aimed at improving TE performance of other compounds.« less

Thickness dependent thermoelectric properties of SrTiO3/SrLaTiO3 and SrZrO3/SrLaTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Ishii, Masatoshi; Baniecki, John; Schafranek, Robert; Kerman, Kian; Kurihara, Kazuaki

2013-03-01

Thermoelectric power generators will be required for future sensor network systems. SrTiO3 (STO) is one candidate thermoelectric material due to its non-toxicity and comparable power factor to Bismuth telluride. The energy conversion efficiency of SrTiO3-based thermoelectric energy conversion elements has been reported to be enhanced by quantum size effects, such as the two dimensional (2D) electron gas in SrTiO3/SrTi0.8Nb0.2O3/SrTiO3. Nevertheless, a complete understanding of the mechanisms for the reported increase in efficiency are missing owing to a lack of understanding of the thickness dependence of the transport properties. In the talk, we will present a study of the thickness dependence of the transport properties of SrTiO3/SrLaTiO3 and SrZrO3/SrLaTiO3 heterostructures. The SrZrO3/SrLaTiO3 interface has a large conduction band off-set of 1.9 eV which can be utilized to confine electrons in a 2D quantum well. Characterization of the thermopower, conductivity, and Hall effect will be presented as a function of the SrLaTiO3 thickness down to a few unit cells and the implications of the thickness dependence of the transport properties on carrier confinement and increasing the efficiency STO-based 2DEG quantum well structures will be discussed.

Thermal annealing effect on structural and thermoelectric properties of hexagonal Bi2Te3 nanoplate thin films by drop-casting technique

NASA Astrophysics Data System (ADS)

Hosokawa, Yuichi; Wada, Kodai; Tanaka, Masaki; Tomita, Koji; Takashiri, Masayuki

2018-02-01

High-purity hexagonal bismuth telluride (Bi2Te3) nanoplates were prepared by a solvothermal synthesis method, followed by the fabrication of nanoplate thin films by the drop-casting technique. The Bi2Te3 nanoplates exhibited a single-crystalline phase with a rhombohedral crystal structure. The nanoplates had a flat surface with edge sizes ranging from 500 to 2000 nm (average size of 1000 nm) and a thickness of less than 50 nm. The resulting Bi2Te3 nanoplate thin films were composed of well-aligned hexagonal nanoplates along the surface direction with an approximate film thickness of 40 µm. To tightly connect the nanoplates together within the thin films, thermal annealing was performed at different temperatures. We found that the thermoelectric properties, especially the Seebeck coefficient, were very sensitive to the annealing temperature. Finally, the optimum annealing temperature was determined to be 250 °C and the Seebeck coefficient and power factor were -300 µV/K and 3.5 µW/(cm·K2), respectively.

Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

NASA Technical Reports Server (NTRS)

Kim, Hyun-Jung; King, Glen C.; Park, Yeonjoon; Lee, Kunik; Choi, Sang H.

2011-01-01

Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

Toward stand-off open-path measurements of NO and NO(2) in the sub-parts per million meter range using quantum cascade lasers (QCLs) in the intra-pulse absorption mode.

PubMed

Reidl-Leuthner, Christoph; Lendl, Bernhard

2013-12-01

Two thermoelectrically cooled mid-infrared distributed feedback quantum cascade lasers operated in pulsed mode have been used for the quasi-simultaneous determination of NO and NO2 in the sub-parts per million meter (sub-ppm-m) range. Using a beam splitter, the beams of the two lasers were combined and sent to a retro-reflector. The returned light was recorded with a thermoelectrically cooled mercury cadmium telluride detector with a rise time of 4 ns. Alternate operation of the lasers with pulse lengths of 300 ns and a repetition rate of 66 kHz allowed quasi-simultaneous measurements. During each pulse the laser temperature increased, causing a thermal chirp of the laser line of up to 1.3 cm(-1). These laser chirps were sufficient to scan rotational bands of NO centered at 1902 cm(-1) and NO2 located at 1632 cm(-1). In that way an absorption spectrum could be recorded from a single laser pulse. Currently achieved limits of detection are 600 parts per billion meter (ppb-m) for NO and 260 ppb-m for NO2 using signal averaging over 1 min. This work presents the first steps toward a portable stand-off, open-path instrument that uses thermoelectrically cooled detector and lasers.

Off-stoichiometric silver antimony telluride: An experimental study of transport properties with intrinsic and extrinsic doping

DOE PAGES

Nielsen, Michele D.; Jaworski, Christopher M.; Heremans, Joseph P.

2015-03-20

AgSbTe 2 is a thermoelectric semiconductor with an intrinsically low thermal conductivity and a valence band structure that is favorable to obtaining a high thermoelectric figure of merit zT. It also has a very small energy gap Eg ~ 7.6 ± 3 meV. As this gap is less than the thermal excitation energy at room temperature, near-intrinsic AgSbTe 2 is a two carrier system having both holes (concentration p) and electrons ( n). Good thermoelectric performance requires heavy p-type doping ( p > > n). This can be achieved with native defects or with extrinsic doping, e.g. with transition metalmore » element. The use of defect doping is complicated by the fact that many of the ternary Ag-Sb-Te and pseudo-binary Sb 2Te 3-Ag 2Te phase diagrams are contradictory. This paper determines the compositional region most favorable to creating a single phase material. Through a combination of intrinsic and extrinsic doping, values of zT > 1 are achieved, though not on single-phased material. In addition, we show that thermal conductivity is not affected by defects, further demonstrating that the low lattice thermal conductivity of I-V-VI 2 materials is due to an intrinsic mechanism, insensitive to changes in defect structure.« less

High resolution X-ray diffraction imaging of lead tin telluride

NASA Technical Reports Server (NTRS)

Steiner, Bruce; Dobbyn, Ronald C.; Black, David; Burdette, Harold; Kuriyama, Masao; Spal, Richard; Simchick, Richard; Fripp, Archibald

1991-01-01

High resolution X-ray diffraction images of two directly comparable crystals of lead tin telluride, one Bridgman-grown on Space Shuttle STS 61A and the other terrestrially Bridgman-grown under similar conditions from identical material, present different subgrain structure. In the terrestrial, sample 1 the appearance of an elaborate array of subgrains is closely associated with the intrusion of regions that are out of diffraction in all of the various images. The formation of this elaborate subgrain structure is inhibited by growth in microgravity.

Enhancement of Thermoelectric Properties in Cold Pressed Nickel Doped Bismuth Sulfide Compounds

NASA Astrophysics Data System (ADS)

Fitriani, Fitriani; Said, Suhana Mohd; Rozali, Shaifulazuar; Salleh, Mohd Faiz Mohd; Sabri, Mohd Faizul Mohd; Bui, Duc Long; Nakayama, Tadachika; Raihan, Ovik; Megat Hasnan, Megat Muhammad Ikhsan; Bashir, Mohamed Bashir Ali; Kamal, Farhan

2018-05-01

Nanostructured Ni doped Bi2S3 (Bi2-xNixS3, 0 ≤ x ≤ 0.07) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of Bi2S3 was decreased by adding Ni atoms, which shows a minimum value of 2.35 × 10-3 Ω m at 300 °C for Bi1.99Ni0.01S3 sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of 59.6% compared to a high density Bi2S3. The thermal conductivity of Bi2-xNixS3 ranges from 0.31 to 0.52 W/m K in the temperature range of 27 °C (RT) to 300 °C with the lowest κ values of Bi2S3 compared to the previous works. A maximum ZT value of 0.13 at 300 °C was achieved for Bi1.99Ni0.01S3 sample, which is about 2.6 times higher than (0.05) of Bi2S3 sample. This work show an optimization pathway to improve thermoelectric performance of Bi2S3 through Ni doping and introduction of porosity.

Electrical performance analysis and economic evaluation of combined biomass cook stove thermoelectric (BITE) generator.

PubMed

Lertsatitthanakorn, C

2007-05-01

The use of biomass cook stoves is widespread in the domestic sector of developing countries, but the stoves are not efficient. To advance the versatility of the cook stove, we investigated the feasibility of adding a commercial thermoelectric (TE) module made of bismuth-telluride based materials to the stove's side wall, thereby creating a thermoelectric generator system that utilizes a proportion of the stove's waste heat. The system, a biomass cook stove thermoelectric generator (BITE), consists of a commercial TE module (Taihuaxing model TEP1-1264-3.4), a metal sheet wall which acts as one side of the stove's structure and serves as the hot side of the TE module, and a rectangular fin heat sink at the cold side of the TE module. An experimental set-up was built to evaluate the conversion efficiency at various temperature ranges. The experimental set-up revealed that the electrical power output and the conversion efficiency depended on the temperature difference between the cold and hot sides of the TE module. At a temperature difference of approximately 150 degrees C, the unit achieved a power output of 2.4W. The conversion efficiency of 3.2% was enough to drive a low power incandescent light bulb or a small portable radio. A theoretical model approximated the power output at low temperature ranges. An economic analysis indicated that the payback period tends to be very short when compared with the cost of the same power supplied by batteries. Therefore, the generator design formulated here could be used in the domestic sector. The system is not intended to compete with primary power sources but serves adequately as an emergency or backup source of power.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levin, E. M.; Iowa State Univ., Ames, IA; Cui, J. -F.

125Te NMR spectra and spin-lattice relaxation times, T 1, have been measured for several GeTe-based materials with Te excess. In this paper, the spectra show inhomogeneous broadening by several thousand ppm and a systematic variation in T 1 relaxation time with resonance frequency. The quadratic dependence of the spin-lattice relaxation rate, 1/T 1, on the Knight shift in the Korringa relation is found to be valid over a wide range of Knight shifts. This result confirms that T 1 relaxation in GeTe-based materials is mostly dominated by hyperfine interaction between nuclei and free charge carriers. In GeTe with 2.5% excessmore » of Te, about 15% of the material exhibits a Knight shift of ≥4500 ppm and a T 1 of only 0.3 ms, indicating a high hole concentration that could correspond to close to 50% vacancies on the Ge sublattice in this component. Lastly, our findings provide a basis for determining the charge carrier concentration and its distribution in complex thermoelectric and phase-change tellurides, which should lead to a better understanding of electronic and thermal transport properties as well as chemical bonding in these materials.« less

Strong anharmonic phonon scattering induced giant reduction of thermal conductivity in PbTe nanotwin boundary

NASA Astrophysics Data System (ADS)

Zhou, Yanguang; Yang, Jia-Yue; Cheng, Long; Hu, Ming

2018-02-01

Lead telluride (PbTe) is a renowned thermoelectric material with high energy conversion efficiency in medium to high temperature range. However, the performance of PbTe at room temperature is poor due to its relatively high lattice thermal conductivity, which is difficult to be engineered due to its intrinsic very short phonon mean-free path. By performing systematic first-principles and molecular-dynamics simulations, we report that the room-temperature lattice thermal conductivity of PbTe can be reduced by almost one order of magnitude (86%) using the recent experimentally observed nanotwin structure. The mechanism responsible for the dramatic decrease of thermal conductivity strongly depends on the type and mass of atoms at the twin boundary. For PbTe nanotwinned structures with Te at the twin boundary, phonon transport is dominated by the phonon confinement effect and phonon-twin boundary scattering, and the thermal conductivity converges to the bulk value when half of the periodic length is larger than the dominant phonon mean-free path. The same phenomenon is found in another comparison system of KCl nanotwinned structures. However, when Pb is present at the twin boundary, a scattering mechanism occurs: anharmonicity induced by the twin boundary. Due to the mass difference between Pb and Te, the thermal resistance for Pb residing at the twin boundary is found to be one order of magnitude larger than the case with Te at the twin boundary, which results in much stronger phonon-twin boundary scattering. Consequently, the lowest thermal conductivity of such PbTe nanotwinned structure is only 0.4 W/mK, which is reduced by about sevenfold compared to the bulk value of 2.85 W/mK; finally, the converged thermal conductivity cannot restore the bulk value even when half of the periodic length is much larger than the dominant mean-free path. These results offer useful guidance for the development of PbTe-based thermoelectrics and also suggest that nanotwins are excellent building blocks for enhancing the performance of existing thermoelectrics.

Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment.

PubMed

An, Hyeunhwan; Karas, Dale; Kim, Byung-Wook; Trabia, Sarah; Moon, Jaeyun

2018-07-06

Flexible thermoelectric (TE) materials, which are devices that convert thermal gradients to electrical energy, have attracted interest for practical energy-harvesting/recovery applications. However, as compared with p-type materials, the progress on the development of n-type TE flexible materials has been slow due to difficulties involved in n-type doping techniques. This study used high mobility carbon nanotubes (CNTs) to a uniformly mixed hybrid-composite, resulting in an enhanced power factor by increasing electrical conductivity. The energy filtering effect and stoichiometric composition of the material used, bismuth telluride (Bi 2 Te 3 ) correlated to a significant enhancement in TE performance, with a power factor of 225.9 μW m -1 K -2 at room temperature: a factor of 65 higher than as-fabricated composite film. This paper describes a simplified synthesis for the preparation of the composite film that eliminates time-intensive and cost-prohibitive processing, traditionally seen during extrusion and dicing inorganic manufacturing. The resulting post-annealed composite film consisting of Bi 2 Te 3 nanowire and CNTs demonstrate a promising candidate for material that can be used for an n-type TE device that has improved energy conversion efficiency.

Thickness dependence of the electrical and thermoelectric properties of co-evaporated Sb2Te3 films

NASA Astrophysics Data System (ADS)

Shen, Haishan; Lee, Suhyeon; Kang, Jun-gu; Eom, Tae-Yil; Lee, Hoojeong; Han, Seungwoo

2018-01-01

P-type antimony telluride (Sb2Te3) films of various thicknesses (1-, 6-, 10-, and 16-μm) were deposited on an oxidized Si (100) substrate at 250 °C by effusion cell co-evaporation. Microstructural analysis using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the grains of the films grew in a mode in which recrystallization was prevalent and grain growth subdued, in contrast to typical film growth, which is often characterized by grain growth. The resultant microstructure exhibited narrow columnar grains, the preferred orientation of which changed with film growth thickness from (1010) with the 1-μm films to (015) for the 6- and 10-μm films, and finally (110) for the 16-μm films. Carrier mobility and the overall thermoelectric properties of the Sb2Te3 films were affected significantly by changes in the film microstructure; this was attributed to the strong anisotropy of Sb2Te3 regarding electrical conductivity. The highest power factor of 3.3 mW/mK2 was observed for the 1-μm-thick Sb2Te3 film.

Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment

NASA Astrophysics Data System (ADS)

An, Hyeunhwan; Karas, Dale; Kim, Byung-Wook; Trabia, Sarah; Moon, Jaeyun

2018-07-01

Flexible thermoelectric (TE) materials, which are devices that convert thermal gradients to electrical energy, have attracted interest for practical energy-harvesting/recovery applications. However, as compared with p-type materials, the progress on the development of n-type TE flexible materials has been slow due to difficulties involved in n-type doping techniques. This study used high mobility carbon nanotubes (CNTs) to a uniformly mixed hybrid-composite, resulting in an enhanced power factor by increasing electrical conductivity. The energy filtering effect and stoichiometric composition of the material used, bismuth telluride (Bi2Te3) correlated to a significant enhancement in TE performance, with a power factor of 225.9 μW m‑1K‑2 at room temperature: a factor of 65 higher than as-fabricated composite film. This paper describes a simplified synthesis for the preparation of the composite film that eliminates time-intensive and cost-prohibitive processing, traditionally seen during extrusion and dicing inorganic manufacturing. The resulting post-annealed composite film consisting of Bi2Te3 nanowire and CNTs demonstrate a promising candidate for material that can be used for an n-type TE device that has improved energy conversion efficiency.

Thermoelectric efficiency enhanced in a quantum dot with polarization leads, spin-flip and external magnetic field

NASA Astrophysics Data System (ADS)

Yao, Hui; Niu, Peng-Bin; Zhang, Chao; Xu, Wei-Ping; Li, Zhi-Jian; Nie, Yi-Hang

2018-03-01

We theoretically study the thermoelectric transport properties in a quantum dot system with two ferromagnetic leads, the spin-flip scattering and the external magnetic field. The results show that the spin polarization of the leads strongly influences thermoelectric coefficients of the device. For the parallel configuration the peak of figure of merit increases with the increase of polarization strength and non-collinear configuration trends to destroy the improvement of figure of merit induced by lead polarization. While the modulation of the spin-flip scattering on the figure of merit is effective only in the absence of external magnetic field or small magnetic field. In terms of improving the thermoelectric efficiency, the external magnetic field plays a more important role than spin-flip scattering. The thermoelectric efficiency can be significantly enhanced by the magnetic field for a given spin-flip scattering strength.

Formation of randomly distributed nano-tubes, -rods and -plates of n-type and p-type bismuth telluride via molecular legation

NASA Astrophysics Data System (ADS)

Ram, Jasa; Ghosal, Partha

2015-08-01

Randomly distributed nanotubes, nanorods and nanoplates of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 ternary compounds have been synthesized via a high yield solvo-thermal process. Prior to solvo-thermal heating at 230 °C for crystallization, we ensured molecular legation in room temperature reaction by complete reduction of precursor materials, dissolved in ethylene glycol and confirmed it by replicating Raman spectra of amorphous and crystalline materials. These nanomaterials have also been characterized using XRD, FE-SEM, EDS and TEM. Possible formation mechanism is also discussed. This single process will enable development of thermoelectric modules and random distribution of diverse morphology will be beneficial in retaining nano-crystallite sizes.

Power Generation Evaluated on a Bismuth Telluride Unicouple Module

NASA Astrophysics Data System (ADS)

Hu, Xiaokai; Nagase, Kazuo; Jood, Priyanka; Ohta, Michihiro; Yamamoto, Atsushi

2015-06-01

The power generated by a thermoelectric unicouple module made of Bi2Te3 alloy was evaluated by use of a newly developed instrument. An electrical load was connected to the module, and the terminal voltage and output power of the module were obtained by altering electric current. Water flow was used to cool the cold side of the module and for heat flow measurement, by monitoring inlet and outlet temperatures. When the electric current was increased, heat flow was enhanced as a result of the Peltier effect and Joule heating. Voltage, power, heat flow, and efficiency as functions of current were determined for hot-side temperatures from 50 to 220°C. Maximum power output and peak conversion efficiency could thus be easily derived for each temperature.

Integration of ZnO and CuO nanowires into a thermoelectric module

PubMed Central

Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

2014-01-01

Summary Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices. PMID:24991531

Integration of ZnO and CuO nanowires into a thermoelectric module.

PubMed

Zappa, Dario; Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

2014-01-01

Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices.

Emergent nanoscale fluctuations in high rock-salt PbTe

NASA Astrophysics Data System (ADS)

Billinge, Simon

2013-03-01

Lead Telluride is one of the most promising thermoelectric materials in the temperature range just above room temperature. It is a narrow band gap semiconductor with a high Seebeck coefficient and a low thermal conductivity. It is structurally much simpler than many other leading candidates for high performance thermoelectrics being a binary rock-salt, isostructural to NaCl. The thermoelectric figure of merit, ZT, can be markedly improved by alloying with various other elements by forming quenched nanostructures. The undoped endmember, PbTe, does not have any such quenched nanostructure, yet has a rather low intrinsic thermal conductivity. There are also a number of interesting and non-canonical behaviors that it exhibits, such as an increasing measured band-gap with increasing temperature, exactly opposite to what is normally seen due to Fermi smearing of the band edge, and an unexpected non-monotonicity of the band gap in the series PbTe - PbSe - PbS. The material is on the surface simple, but hides some interesting complexity. We have investigated in detail the PbTe endmember using x-ray and neutron diffraction and neutron inelastic scattering. To our surprise, using the atomic pair distribution function (PDF) analysis of neutron powder diffraction data we found that an interesting and non-trivial local structure that appears on warming. with the Pb atoms moving off the high-symmetry rock-salt positions towards neighboring Te ions. No evidence for the off-centering of the Pb atoms is seen at low temperature. The crossover from the locally undistorted to the locally distorted state occurs on warming between 100 K and 250 K. This unexpected emergence of local symmetry broken distortions from an undistorted ground-state we have called emphanisis, from the Greek for appearing from nothing. We have also investigated the lattice dynamics of the system to search for a dynamical signature of this behavior and extended the studies to doped systems and I will also describe the results of these experiments. This work gives key insights into PbTe, the possible origin of its anomalous electronic structure properties, and why it is such an attractive parent compound for nanostructured high performance thermoelectric materials. I would like to acknowledge the excellent collaborations that occurred during this work, including Emil Bozin at Brookhaven National Laboratory, Mercouri Kanatzidis and Christos Malliakas at Northwestern University and Argonne National Laboratory, Kirsten Jensen from U. Aarhus, Steve Shapiro at Brookhaven National Laboratory, Matt Stone and Mark Lumsden at Oak Ridge National Laboratory, Nicola Spalding at ETH Zurich and Petros Souvatzis at Los Alamos National Laboratory. I would also like to acknowledge the support of the national user facilities and their staff where the work was done. Financial support for this work was from DOE office of Basic Energy Sciences through award DE-AC02-98CH10886.

Investigation of Counter-Flow in a Heat Pipe-Thermoelectric Generator (HPTEG)

NASA Astrophysics Data System (ADS)

Remeli, Muhammad Fairuz; Singh, Baljit; Affandi, Nor Dalila Nor; Ding, Lai Chet; Date, Abhijit; Akbarzadeh, Aliakbar

2017-05-01

This study explores a method of generating electricity while recovering waste heat through the integration of heat pipes and thermoelectric generators (i.e. HPTEG system). The simultaneous waste heat recovery and power generation processes are achieved without the use of any moving parts. The HPTEG system consists of bismuth telluride thermoelectric generators (TEG), which are sandwiched between two finned pipes to achieve a temperature gradient across the TEG for electricity generation. A counter-flow heat exchanger was built using two separate air ducts. The air ducts were thermally coupled using the HPTEG modules. The evaporator section of the heat pipe absorbed the waste heat in a hot air duct. The heat was then transferred across the TEG surfaces. The condenser section of the HPTEG collected the excess heat from the TEG cold side before releasing it to the cold air duct. A 2-kW electrical heater was installed in the hot air duct to simulate the exhaust gas. An air blower was installed at the inlet of each duct to direct the flow of air into the ducts. A theoretical model was developed for predicting the performance of the HPTEG system using the effectiveness-number of transfer units method. The developed model was able to predict the thermal and electrical output of the HPTEG, along with the rate of heat transfer. The results showed that by increasing the cold air velocity, the effectiveness of the heat exchanger was able to be increased from approximately 52% to 58%. As a consequence of the improved heat transfer, maximum power output of 4.3 W was obtained.

Corrosion Behavior of Bi2Te3-Based Thermoelectric Materials Fabricated by Melting Method

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2017-05-01

Bi2Te3-based compounds are used practically as thermoelectric cooling materials. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudobinary system compounds are usually applied as p- or n-type material, respectively. Atmospheric water may condense on the surface of thermoelectric materials constituting Peltier modules, depending on their operating environment. Very few studies on the corrosion resistance of Bi2Te3-based compounds have been reported in literature. Moreover, the detailed corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the corrosion behavior of cleavage planes of Bi2Te3-based compounds fabricated by a melting method has been investigated. Bi2Te3, Sb2Te3, and Bi2Se3 were prepared by the vertical Bridgman method, respectively. Their electrochemical properties evaluated at room temperature by cyclic voltammetry in a standard three-electrode cell with naturally aerated 0.6 mass% or 3.0 mass% NaCl solution as working electrolyte. The c-planes of Bi2Te3 and Sb2Te3 exhibited similar corrosion potential. The corrosion potential of c-plane of Bi2Se3 was more cathodic compared with that of the telluride. The passive current density of the Bi2Te3-based compounds was single or double digit lower than that of stainless steel. X-ray photoelectron spectroscopy results for the electrolyte after testing indicated the possibility that a corrosion product diffuses to the environment including NaCl for Sb2Te3 and Bi2Se3.

Thermoelectric energy harvesting from diurnal heat flow in the upper soil layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whalen, Scott A.; Dykhuizen, Ronald C.

2012-09-26

We built and tested a subterranean thermoelectric power source that converts diurnal heat flow through the upper soil layer into electricity. This paper describes the operation, design, and performance of the device. Key features of the power source include the use of bismuth-telluride thermopiles optimized for small ΔT and aerogel insulation to minimize thermal losses. The device weighs 0.24 kg and was designed with a flat form factor measuring 12 × 12 × 1.7 cm to facilitate modularity, packing, and assembly into larger arrays. One full year of field testing was performed between June 2009 and May 2010 in Albuquerque,more » New Mexico where the device generated an average power output of 1.1 mW. The season with the highest performance was spring (March–May) while the season of lowest performance was winter (November–January). During May 2010, the device generated an average power of 1.5 mW and a peak power of 9.8 mW at 9.3 V. Ten years of continuous operation at 1.1 mW would yield an energy density and specific energy of 1384 W h/L and 1430 W h/kg respectively, which is competitive with chemical batteries and is orders of magnitude greater than published subterranean and ambient thermoelectric harvesters. Numerical simulations show that performance is sensitive to the thermal properties of the soil and environmental conditions. This class of energy harvester may provide an option for supplemental power, or possibly primary power, for low power remote sensing applications.« less

High Electron Mobility and Disorder Induced by Silver Ion Migration Lead to Good Thermoelectric Performance in the Argyrodite Ag 8 SiSe 6

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heep, Barbara K.; Weldert, Kai S.; Krysiak, Yasar

Superionic chalcopyrites have recently attracted interest in their use as potential thermoelectric materials because of extraordinary low thermal conductivities. To overcome long-term stability issues in thermoelectric generators using superionic materials at evaluated temperatures, materials need to be found that show good thermoelectric performance at moderate temperatures. Here, we present the structural and thermoelectric properties of the argyrodite Ag 8SiSe 6, which exhibits promising thermoelectric performance close to room temperature.

Microgravity

NASA Image and Video Library

1997-11-01

The purpose of the experiments for the Advanced Automated Directional Solidification Furnace (AADSF) is to determine how gravity-driven convection affects the composition and properties of alloys (mixtures of two or more materials, usually metal). During the USMP-4 mission, the AADSF will solidify crystals of lead tin telluride and mercury cadmium telluride, alloys of compound semiconductor materials used to make infrared detectors and lasers, as experiment samples. Although these materials are used for the same type application their properties and compositional uniformity are affected differently during the solidification process.

Preparation and Characterization of Niobium Doped Lead-Telluride Glass Ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathish, M.; Eraiah, B.; Anavekar, R. V.

2011-07-15

Niobium-lead-telluride glass ceramics of composition xNb{sub 2}O{sub 5}-(20-x) pbO-80TeO{sub 2}(where x = 0.1 mol% to 0.5 mol%) were prepared by using conventional melt quenching method. The prepared glass samples were initially amorphous in nature after annealed at 400 deg. c all samples were crystallized. This was confined by X-ray diffraction and scanning electron microscopy. The particle size of these glass ceramics have been calculated by using Debye-Scherer formula and the particle size is in the order of 15 nm to 60 nm. The scanning electron microscopy (SEM) photograph shows the presence of needle-like crystals in these samples.

Thermoelectric DC conductivities in hyperscaling violating Lifshitz theories

NASA Astrophysics Data System (ADS)

Cremonini, Sera; Cvetič, Mirjam; Papadimitriou, Ioannis

2018-04-01

We analytically compute the thermoelectric conductivities at zero frequency (DC) in the holographic dual of a four dimensional Einstein-Maxwell-Axion-Dilaton theory that admits a class of asymptotically hyperscaling violating Lifshitz backgrounds with a dynamical exponent z and hyperscaling violating parameter θ. We show that the heat current in the dual Lifshitz theory involves the energy flux, which is an irrelevant operator for z > 1. The linearized fluctuations relevant for computing the thermoelectric conductivities turn on a source for this irrelevant operator, leading to several novel and non-trivial aspects in the holographic renormalization procedure and the identification of the physical observables in the dual theory. Moreover, imposing Dirichlet or Neumann boundary conditions on the spatial components of one of the two Maxwell fields present leads to different thermoelectric conductivities. Dirichlet boundary conditions reproduce the thermoelectric DC conductivities obtained from the near horizon analysis of Donos and Gauntlett, while Neumann boundary conditions result in a new set of DC conductivities. We make preliminary analytical estimates for the temperature behavior of the thermoelectric matrix in appropriate regions of parameter space. In particular, at large temperatures we find that the only case which could lead to a linear resistivity ρ ˜ T corresponds to z = 4 /3.

Thermoelectric Performance of Na-Doped GeSe

PubMed Central

2017-01-01

Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized polycrystalline Na-doped GeSe compounds, characterized their crystal structure, and measured their thermoelectric properties. The Seebeck coefficient decreases with increasing Na content up to x = 0.01 due to an increase in the hole carrier concentration and remains roughly constant at higher concentrations of Na, consistent with the electrical resistivity variation. However, the electrical resistivity is large for all samples, leading to low power factors. Powder X-ray diffraction and scanning electron microscopy/energy-dispersive spectrometry results show the presence of a ternary impurity phase within the GeSe matrix for all doped samples, which suggests that the optimal carrier concentration cannot be reached by doping with Na. Nevertheless, the lattice thermal conductivity and carrier mobility of GeSe is similar to those of polycrystalline samples of the leading thermoelectric material SnSe, leading to quality factors of comparable magnitude. This implies that GeSe shows promise as a thermoelectric material if a more suitable dopant can be found. PMID:29302637

Enhanced stability and thermoelectric figure-of-merit in copper selenide by lithium doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Stephen Dongmin; Pöhls, Jan-Hendrik; Aydemir, Umut

Superionic thermoelectric materials have been shown to have high figure-of-merits, leading to expectations for efficient high-temperature thermoelectric generators. These compounds exhibit extremely high cation diffusivity, comparable to that of a liquid, which is believed to be associated with the low thermal conductivity that makes superionic materials good for thermoelectrics. However, the superionic behavior causes cation migration that leads to device deterioration, being the main obstacle for practical applications. It has been reported that lithium doping in superionic Cu2-xSe leads to suppression of the Cu ion diffusivity, but whether the material will retain the promising thermoelectric properties had not yet beenmore » investigated. Here, we report a maximum zT>1.4 from Li0.09Cu1.9Se, which is higher than what we find in the undoped samples. The high temperature effective weighted mobility of the doped sample is found higher than Cu2-xSe, while the lattice thermal conductivity remains similar. We find signatures of suppressed bipolar conduction due to an enlarged band gap. Our findings set forth a possible route for tuning the stability of superionic thermoelectric materials.« less

Ultrasensitive detection of nitric oxide at 5.33 μm by using external cavity quantum cascade laser-based Faraday rotation spectroscopy

PubMed Central

Lewicki, Rafał; Doty, James H.; Curl, Robert F.; Tittel, Frank K.; Wysocki, Gerard

2009-01-01

A transportable prototype Faraday rotation spectroscopic system based on a tunable external cavity quantum cascade laser has been developed for ultrasensitive detection of nitric oxide (NO). A broadly tunable laser source allows targeting the optimum Q3/2(3/2) molecular transition at 1875.81 cm−1 of the NO fundamental band. For an active optical path of 44 cm and 1-s lock-in time constant minimum NO detection limits (1σ) of 4.3 parts per billion by volume (ppbv) and 0.38 ppbv are obtained by using a thermoelectrically cooled mercury–cadmium–telluride photodetector and liquid nitrogen-cooled indium–antimonide photodetector, respectively. Laboratory performance evaluation and results of continuous, unattended monitoring of atmospheric NO concentration levels are reported. PMID:19625625

Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure

NASA Astrophysics Data System (ADS)

Concepción, O.; Escobosa, A.; de Melo, O.

2018-03-01

Bismuth telluride (Bi2Te3), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi2Te3 by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.

An approach to design a 90Sr radioisotope thermoelectric generator using analytical and Monte Carlo methods with ANSYS, COMSOL, and MCNP.

PubMed

Khajepour, Abolhasan; Rahmani, Faezeh

2017-01-01

In this study, a 90 Sr radioisotope thermoelectric generator (RTG) with power of milliWatt was designed to operate in the determined temperature (300-312K). For this purpose, the combination of analytical and Monte Carlo methods with ANSYS and COMSOL software as well as the MCNP code was used. This designed RTG contains 90 Sr as a radioisotope heat source (RHS) and 127 coupled thermoelectric modules (TEMs) based on bismuth telluride. Kapton (2.45mm in thickness) and Cryotherm sheets (0.78mm in thickness) were selected as the thermal insulators of the RHS, as well as a stainless steel container was used as a generator chamber. The initial design of the RHS geometry was performed according to the amount of radioactive material (strontium titanate) as well as the heat transfer calculations and mechanical strength considerations. According to the Monte Carlo simulation performed by the MCNP code, approximately 0.35 kCi of 90 Sr is sufficient to generate heat power in the RHS. To determine the optimal design of the RTG, the distribution of temperature as well as the dissipated heat and input power to the module were calculated in different parts of the generator using the ANSYS software. Output voltage according to temperature distribution on TEM was calculated using COMSOL. Optimization of the dimension of the RHS and heat insulator was performed to adapt the average temperature of the hot plate of TEM to the determined hot temperature value. This designed RTG generates 8mW in power with an efficiency of 1%. This proposed approach of combination method can be used for the precise design of various types of RTGs. Copyright © 2016 Elsevier Ltd. All rights reserved.

Transport properties of lithium- lead-vanadium-telluride glass and glass ceramics

NASA Astrophysics Data System (ADS)

Sathish, M.; Eraiah, B.

2014-04-01

Glasses with the chemical composition 35Li2O-(45-x)V2O5-20PbO-xTeO2 (where x = 2.5, 5, 7.5, 10, 15 mol %) have prepared by conventional melt quenching method. The electrical conductivity of Li+ ion conducting lead vanadium telluride glass samples has been carried out both as a function of temperature and frequency in the temperature range 503K-563K and over frequencies 40 Hz to 10 MHz. The electronic conduction has been observed in the present systems. When these samples annealed around 400°C for 2hour become the glass ceramic, which also shows increase tendency of conductivity. SEM confines glass and glass ceramic nature of the prepared samples.

Thermoelectric effect in an Aharonov-Bohm ring with an embedded quantum dot.

PubMed

Zheng, Jun; Chi, Feng; Lu, Xiao-Dong; Zhang, Kai-Cheng

2012-02-28

Thermoelectric effect is studied in an Aharonov-Bohm interferometer with an embedded quantum dot (QD) in the Coulomb blockade regime. The electrical conductance, electron thermal conductance, thermopower, and thermoelectric figure-of-merit are calculated by using the Keldysh Green's function method. It is found that the figure-of-merit ZT of the QD ring may be quite high due to the Fano effect originated from the quantum interference effect. Moreover, the thermoelectric efficiency is sensitive to the magnitude of the dot-lead and inter-lead coupling strengthes. The effect of intradot Coulomb repulsion on ZT is significant in the weak-coupling regime, and then large ZT values can be obtained at rather high temperature.

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

PubMed Central

Parker, David; Singh, David J

2013-01-01

We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature. PMID:27877610

Thermoelectric Properties of SnS with Na-Doping.

PubMed

Zhou, Binqiang; Li, Shuai; Li, Wen; Li, Juan; Zhang, Xinyue; Lin, Siqi; Chen, Zhiwei; Pei, Yanzhong

2017-10-04

Tin sulfide (SnS), a low-cost compound from the IV-VI semiconductors, has attracted particular attention due to its great potential for large-scale thermoelectric applications. However, pristine SnS shows a low carrier concentration, which leads to a low thermoelectric performance. In this work, sodium is utilized to substitute Sn to increase the hole concentration and consequently improve the thermoelectric power factor. The resultant Hall carrier concentration up to ∼10 19 cm -3 is the highest concentration reported so far for this compound. This further leads to the highest thermoelectric figure of merit, zT of 0.65, reported so far in polycrystalline SnS. The temperature-dependent Hall mobility shows a transition of carrier-scattering source from a grain boundary potential below 400 K to acoustic phonons at higher temperatures. The electronic transport properties can be well understood by a single parabolic band (SPB) model, enabling a quantitative guidance for maximizing the thermoelectric power factor. Using the experimental lattice thermal conductivity, a maximal zT of 0.8 at 850 K is expected when the carrier concentration is further increased to ∼1 × 10 20 cm -3 , according to the SPB model. This work not only demonstrates SnS as a promising low-cost thermoelectric material but also details the material parameters that fundamentally determine the thermoelectric properties.

Boosting spin-caloritronic effects by attractive correlations in molecular junctions.

PubMed

Weymann, Ireneusz

2016-01-25

In nanoscopic systems quantum confinement and interference can lead to an enhancement of thermoelectric properties as compared to conventional bulk materials. For nanostructures, such as molecules or quantum dots coupled to external leads, the thermoelectric figure of merit can reach or even exceed unity. Moreover, in the presence of external magnetic field or when the leads are ferromagnetic, an applied temperature gradient can generate a spin voltage and an associated spin current flow in the system, which makes such nanostructures particularly interesting for future thermoelectric applications. In this study, by using the numerical renormalization group method, we examine the spin-dependent thermoelectric transport properties of a molecular junction involving an orbital level with attractive Coulomb correlations coupled to ferromagnetic leads. We analyze how attractive correlations affect the spin-resolved transport properties of the system and find a nontrivial dependence of the conductance and tunnel magnetoresistance on the strength and sign of those correlations. We also demonstrate that attractive correlations can lead to an enhancement of the spin thermopower and the figure of merit, which can be controlled by a gate voltage.

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

2013-10-08

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb 1-xGe xTe and Pb 1-xSn xTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pbmore » neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.« less

Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

NASA Technical Reports Server (NTRS)

Barber, P. G.; Berry, R. F.; Debnam, W. J.; Fripp, A. L.; Woodell, G.; Simchick, R. T.

1995-01-01

Using the advanced technology developed to visualize the melt-solid interface in low Prandtl number materials, crystal growth rates and interface shapes have been measured in germanium and lead tin telluride semiconductors grown in vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations to determine interface shapes, to measure crystal growth rates, and to improve furnace and ampoule designs is demonstrated. The interface shapes observed in-situ, in real-time were verified by quenching and mechanically induced interface demarcation, and they were also confirmed using machined models to ascertain the absence of geometric distortions. Interface shapes depended upon the interface position in the furnace insulation zone, varied with the nature of the crystal being grown, and were dependent on the extent of transition zones at the ends of the ampoule. Actual growth rates varied significantly from the constant translation rate in response to the thermophysical properties of the crystal and its melt and the thermal conditions existing in the furnace at the interface. In the elemental semiconductor germanium the observed rates of crystal growth exceeded the imposed translation rate, but in the compound semiconductor lead tin telluride the observed rates of growth were less than the translation rate. Finally, the extent of ampoule thermal loading influenced the interface positions, the shapes, and the growth rates.

Thermoelectric effect in an Aharonov-Bohm ring with an embedded quantum dot

PubMed Central

2012-01-01

Thermoelectric effect is studied in an Aharonov-Bohm interferometer with an embedded quantum dot (QD) in the Coulomb blockade regime. The electrical conductance, electron thermal conductance, thermopower, and thermoelectric figure-of-merit are calculated by using the Keldysh Green's function method. It is found that the figure-of-merit ZT of the QD ring may be quite high due to the Fano effect originated from the quantum interference effect. Moreover, the thermoelectric efficiency is sensitive to the magnitude of the dot-lead and inter-lead coupling strengthes. The effect of intradot Coulomb repulsion on ZT is significant in the weak-coupling regime, and then large ZT values can be obtained at rather high temperature. PMID:22369454

Space processing of electronic materials

NASA Technical Reports Server (NTRS)

Holland, L. R.

1982-01-01

The bulk growth of solid solution alloys of mercury telluride and cadmium telluride is discussed. These alloys are usually described by the formula Hg1-xCdxTe, and are useful for the construction of infrared detectors. The electronic energy band gap can be controlled between zero and 1.6 electron volts by adjusting the composition x. The most useful materials are at x approximately 20%, suitable for detection wavelengths of about 10 micrometers. The problems of growing large crystals are rooted in the wide phase diagram of the HgTe-CdTe pseudobinary system which leads to exaggerate segregation in freezing, constitutional supercooling, and other difficulties, and in the high vapor pressure of mercury at the growth temperatures, which leads to loss of stoichiometry and to the necessity of working in strong, pressure resistant sealed containers.

Lattice anharmonicity, phonon dispersion, and thermal conductivity of PbTe studied by the phonon quasiparticle approach

NASA Astrophysics Data System (ADS)

Lu, Yong; Sun, Tao; Zhang, Dong-Bo

2018-05-01

We investigated the vibrational property of lead telluride (PbTe) with a focus on lattice anharmonicity at moderate temperatures (300

Thermoelectric effects in superconductor-ferromagnet tunnel junctions on europium sulfide

NASA Astrophysics Data System (ADS)

Kolenda, S.; Sürgers, C.; Fischer, G.; Beckmann, D.

2017-06-01

We report on large thermoelectric effects in superconductor-ferromagnet tunnel junctions in proximity contact with the ferromagnetic insulator europium sulfide. The combination of a spin-splitting field and spin-polarized tunnel conductance in these systems breaks the electron-hole symmetry and leads to spin-dependent thermoelectric currents. We show that the exchange splitting induced by europium sulfide boosts the thermoelectric effect in small applied fields and can therefore eliminate the need to apply large magnetic fields, which might otherwise impede applications in thermometry or cooling.

Synthesis and Evaluation of Single Layer, Bilayer, and Multilayer Thermoelectric Thin Films

DOE R&D Accomplishments Database

Farmer, J. C.; Barbee, T. W. Jr.; Chapline, G. C. Jr.; Olsen, M. L.; Foreman, R. J.; Summers, L. J.; Dresselhaus, M. S.; Hicks, L. D.

1995-01-20

The relative efficiency of a thermoelectric material is measured in terms of a dimensionless figure of merit, ZT. Though all known thermoelectric materials are believed to have ZT{le}1, recent theoretical results predict that thermoelectric devices fabricated as two-dimensional quantum wells (2D QWs) or one-dimensional (ID) quantum wires could have ZT{ge}3. Multilayers with the dimensions of 2D QWs have been synthesized by alternately sputtering thermoelectric and barrier materials onto a moving single-crystal sapphire substrate from dual magnetrons. These materials have been used to test the thermoelectric quantum well concept and gain insight into relevant transport mechanisms. If successful, research could lead to thermoelectric devices that have efficiencies close to that of an ideal Carnot engine. Ultimately, such devices could be used to replace conventional heat engines and mechanical refrigeration systems.

semiconducting nanostructures: morphology and thermoelectric properties

NASA Astrophysics Data System (ADS)

Culebras, Mario; Torán, Raquel; Gómez, Clara M.; Cantarero, Andrés

2014-08-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1- x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

NASA Astrophysics Data System (ADS)

Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

2015-06-01

Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation <4% in the electrical resistance of batches of ten pellets of both types was indicative of high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (<3 nΩ m2). A test bench was developed for measuring the performance of TE modules at high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically. The TEG was tested under vacuum on a hot-air test bench. The measured output power was 45 W for an air flow of 16 g/s at 750°C. The hot surface of the TE module reached 550°C under these conditions. Silicon-germanium TE modules can survive such temperatures, in contrast with commercial modules based on bismuth telluride, which are limited to 400°C.

Enhanced thermoelectric performance of graphene nanoribbon-based devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossain, Md Sharafat, E-mail: hossain@student.unimelb.edu.au; Huynh, Duc Hau; Nguyen, Phuong Duc

There have been numerous theoretical studies on exciting thermoelectric properties of graphene nano-ribbons (GNRs); however, most of these studies are mainly based on simulations. In this work, we measure and characterize the thermoelectric properties of GNRs and compare the results with theoretical predictions. Our experimental results verify that nano-structuring and patterning graphene into nano-ribbons significantly enhance its thermoelectric power, confirming previous predictions. Although patterning results in lower conductance (G), the overall power factor (S{sup 2}G) increases for nanoribbons. We demonstrate that edge roughness plays an important role in achieving such an enhanced performance and support it through first principles simulations.more » We show that uncontrolled edge roughness, which is considered detrimental in GNR-based electronic devices, leads to enhanced thermoelectric performance of GNR-based thermoelectric devices. The result validates previously reported theoretical studies of GNRs and demonstrates the potential of GNRs for the realization of highly efficient thermoelectric devices.« less

Designing high-performance layered thermoelectric materials through orbital engineering

PubMed Central

Zhang, Jiawei; Song, Lirong; Madsen, Georg K. H.; Fischer, Karl F. F.; Zhang, Wenqing; Shi, Xun; Iversen, Bo B.

2016-01-01

Thermoelectric technology, which possesses potential application in recycling industrial waste heat as energy, calls for novel high-performance materials. The systematic exploration of novel thermoelectric materials with excellent electronic transport properties is severely hindered by limited insight into the underlying bonding orbitals of atomic structures. Here we propose a simple yet successful strategy to discover and design high-performance layered thermoelectric materials through minimizing the crystal field splitting energy of orbitals to realize high orbital degeneracy. The approach naturally leads to design maps for optimizing the thermoelectric power factor through forming solid solutions and biaxial strain. Using this approach, we predict a series of potential thermoelectric candidates from layered CaAl2Si2-type Zintl compounds. Several of them contain nontoxic, low-cost and earth-abundant elements. Moreover, the approach can be extended to several other non-cubic materials, thereby substantially accelerating the screening and design of new thermoelectric materials. PMID:26948043

La 1−x Ca x MnO3 semiconducting nanostructures: morphology and thermoelectric properties

PubMed Central

2014-01-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1−x Ca x MnO3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content. PMID:25206315

La 1-x Ca x MnO 3 semiconducting nanostructures: morphology and thermoelectric properties.

PubMed

Culebras, Mario; Torán, Raquel; Gómez, Clara M; Cantarero, Andrés

2014-01-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1-x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

Thermoelectric transport in Cu7PSe6 with high copper ionic mobility.

PubMed

Weldert, Kai S; Zeier, Wolfgang G; Day, Tristan W; Panthöfer, Martin; Snyder, G Jeffrey; Tremel, Wolfgang

2014-08-27

Building on the good thermoelectric performances of binary superionic compounds like Cu2Se, Ag2Se and Cu2S, a better and more detailed understanding of phonon-liquid electron-crystal (PLEC) thermoelectric materials is desirable. In this work we present the thermoelectric transport properties of the compound Cu7PSe6 as the first representative of the class of argyrodite-type ion conducting thermoelectrics. With a huge variety of possible compositions and high ionic conductivity even at room temperature, the argyrodites represent a very good model system to study structure-property relationships for PLEC thermoelectric materials. We particularly highlight the extraordinary low thermal conductivity of Cu7PSe6 below the glass limit, which can be associated with the molten copper sublattice leading to a softening of phonon modes.

Soluble Lead and Bismuth Chalcogenidometallates: Versatile Solders for Thermoelectric Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hao; Son, Jae Sung; Dolzhnikov, Dmitriy S.

Here we report the syntheses of largely unexplored lead and bismuth chalcogenidometallates in the solution phase. Using N2H4 as the solvent, new compounds such as K6Pb3Te6·7N2H4 were obtained. These soluble molecular compounds underwent cation exchange processes using resin chemistry, replacing Na+ or K+ by decomposable N2H5+ or tetraethylammonium cations. They also transformed into stoichiometric lead and bismuth chalcogenide nanomaterials with the addition of metal salts. Such a versatile chemistry led to a variety of composition-matched solders to join lead and bismuth chalcogenides and tune their charge transport properties at the grain boundaries. Solution-processed thin films composed of Bi0.5Sb1.5Te3 microparticles solderedmore » by (N2H5)6Bi0.5Sb1.5Te6 exhibited thermoelectric power factors (~28 μW/cm K2) comparable to those in vacuum-deposited Bi0.5Sb1.5Te3 films. The soldering effect can also be integrated with attractive fabrication techniques for thermoelectric modules, such as screen printing, suggesting the potential of these solders in the rational design of printable and moldable thermoelectrics.« less

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

1996-01-01

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

1996-07-30

A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

Effect of C and N Addition on Thermoelectric Properties of TiNiSn Half-Heusler Compounds.

PubMed

Dow, Hwan Soo; Kim, Woo Sik; Shin, Weon Ho

2018-02-08

We investigated the thermoelectric properties of the ternary half-Heusler compound, TiNiSn, when introducing C and N. The addition of C or N to TiNiSn leads to an enhanced power factor and a decreasing lattice thermal conductivity by point defect phonon scattering. The thermoelectric performances of TiNiSn alloys are significantly improved by adding 1 at. % TiN, TiC, and figure of merit ( ZT ) values of 0.43 and 0.34, respectively, can be obtained at 723 K. This increase in thermoelectric performance is very helpful in the commercialization of thermoelectric power generation in the mid-temperature range.

THERMOELECTRIC POWER HARVESTING SYSTEMS

EPA Science Inventory

Energy production based on fossil fuels negatively impacts the environment and is not sustainable. Recent advances in the area of nanotechnology have lead to improved performance of direct energy conversion devices such as thermoelectric generators. However, these efforts have...

Contrasting role of antimony and bismuth dopants on the thermoelectric performance of lead selenide

DOE PAGES

Lee, Yeseul; Lo, Shih -Han; Chen, Changqiang; ...

2014-05-02

Increasing the conversion efficiency of thermoelectric materials is a key scientific driver behind a worldwide effort to enable heat to electricity power generation at competitive cost. Here we report an increased performance for antimony-doped lead selenide with a thermoelectric figure of merit of ~1.5 at 800 K. This is in sharp contrast to bismuth doped lead selenide, which reaches a figure of merit of <1. Substituting antimony or bismuth for lead achieves maximum power factors between ~23–27μW cm –1 K –2 at temperatures above 400 K. The addition of small amounts (~0.25 mol%) of antimony generates extensive nanoscale precipitates, whereasmore » comparable amounts of bismuth results in very few or no precipitates. The antimony-rich precipitates are endotaxial in lead selenide, and appear remarkably effective in reducing the lattice thermal conductivity. As a result, the corresponding bismuth-containing samples exhibit smaller reduction in lattice thermal conductivity.« less

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-07-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the E g 2 Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00 l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-04-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the Eg 2Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Quasi-simultaneous in-line flue gas monitoring of NO and NO₂ emissions at a caloric power plant employing mid-IR laser spectroscopy.

PubMed

Reidl-Leuthner, Christoph; Viernstein, Alexander; Wieland, Karin; Tomischko, Wolfgang; Sass, Ludwig; Kinger, Gerald; Ofner, Johannes; Lendl, Bernhard

2014-09-16

Two pulsed thermoelectrically cooled mid-infrared distributed feedback quantum cascade lasers (QCLs) were used for the quasi-simultaneous in-line determination of NO and NO2 at the caloric power plant Dürnrohr (Austria). The QCL beams were combined using a bifurcated hollow fiber, sent through the flue tube (inside diameter: 5.5 m), reflected by a retro-reflector and recorded using a fast thermoelectrically cooled mercury-cadmium-telluride detector. The thermal chirp during 300 ns pulses was about 1.2 cm(-1) and allowed scanning of rotational vibrational doublets of the analytes. On the basis of the thermal chirp and the temporal resolution of data acquisition, a spectral resolution of approximately 0.02 cm(-1) was achieved. The recorded rotational vibrational absorption lines were centered at 1900 cm(-1) for NO and 1630 cm(-1) for NO2. Despite water content in the range of 152-235 g/m(3) and an average particle load of 15.8 mg/m(3) in the flue gas, in-line measurements were possible achieving limits of detection of 73 ppb for NO and 91 ppb for NO2 while optimizing for a single analyte. Quasi-simultaneous measurements resulted in limits of detection of 219 ppb for NO and 164 ppb for NO2, respectively. Influences of temperature and pressure on the data evaluation are discussed, and results are compared to an established reference method based on the extractive measurements presented.

Enhancement of the thermoelectric efficiency in a T-shaped quantum dot system in the linear and nonlinear regimes

NASA Astrophysics Data System (ADS)

Gómez-Silva, G.; Orellana, P. A.; Anda, E. V.

2018-02-01

In the present work, we investigate the thermoelectric properties of a T-shaped double quantum dot system coupled to two metallic leads incorporating the intra-dot Coulomb interaction. We explore the role of the interference effects and Coulomb blockade on the thermoelectric efficiency of the system in the linear and nonlinear regimes. We studied as well the effect of a Van-Hove singularity of the leads density of states (DOS) at the neighborhood of the Fermi energy, a situation that can be obtained using a carbon nanotube, a graphene nano-ribbon or other contacts with one-dimensional properties. The system is studied above the Kondo temperature. The Coulomb blockade of the electronic charges is studied using the Hubbard III approximation, which properly describes the transport properties of this regime. In the linear response, our results show an enhancement of the thermopower and the figure of merit of the system. For a nonlinear situation, we calculate the thermoelectric efficiency and power output, concluding that the T-shaped double quantum dot is an efficient thermoelectric device. Moreover, we demonstrate the great importance of the DOS Van-Hove singularity at the neighborhood of the Fermi energy to obtain a very significant increase in the thermoelectric efficiency of the system.

Physical Vapor Transport of Lead Telluride

NASA Technical Reports Server (NTRS)

Palosz, W.

1997-01-01

Mass transport properties of physical vapor transport of PbTe are investigated. Thermochemical analysis of the system and its implications for the growth conditions are discussed. The effect of the material preparation and pre-processing on the stoichiometry and residual gas pressure and composition, and on related mass flux is shown. A procedure leading to high mass transport rates is presented.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, Falah S.; Nelson, Art J.

1996-01-01

A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

Computational identification of promising thermoelectric materials among known quasi-2D binary compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorai, Prashun; Toberer, Eric S.; Stevanović, Vladan

Quasi low-dimensional structures are abundant among known thermoelectric materials, primarily because of their low lattice thermal conductivities. In this work, we have computationally assessed the potential of 427 known binary quasi-2D structures in 272 different chemistries for thermoelectric performance. To assess the thermoelectric performance, we employ an improved version of our previously developed descriptor for thermoelectric performance [Yan et al., Energy Environ. Sci., 2015, 8, 983]. The improvement is in the explicit treatment of van der Waals interactions in quasi-2D materials, which leads to significantly better predictions of their crystal structures and lattice thermal conductivities. The improved methodology correctly identifiesmore » known binary quasi-2D thermoelectric materials such as Sb2Te3, Bi2Te3, SnSe, SnS, InSe, and In2Se3. As a result, we propose candidate quasi-2D binary materials, a number of which have not been previously considered for thermoelectric applications.« less

Worldwide Emerging Environmental Issues Affecting the U.S. Military. May 2006

DTIC Science & Technology

2006-05-01

include lead, mercury , cadmium and several other substances. [See Recycling Regulations in the EU in August 2005 and Two E-waste laws entered into... mercury and cadmium portable batteries may contain (Certain classes, such as those for emergency systems and handheld tools, are excepted.) The new...multiple-exciton generation in other semiconductors, including lead sulphide , lead telluride and cadmium selenide. What’s more, Klimov says his group

Lead sulphide: Low cost, abundant thermoelectrics

NASA Astrophysics Data System (ADS)

Ahmad, Sajid; Singh, Ajay; Bhattacharya, Shovit; Basu, Ranita; Bhatt, Ranu; Bohra, Anil; Muthe, K. P.; Gadkari, S. C.

2018-04-01

Lead and sulphur are the most abundant and low cost materials on the earth's crust, lead chalcogenide (S, Se and Te) materials have got best applications in thermoelectric power generations. Among the chalcogenides, selenium and tellurium are costlier and are more toxic material than sulphur. [1][2] Decreasing the thermal conductivity has been proven to be the easiest approach to improve the thermoelectric performance of a material. In the present work, the lead sulphide (PbS) and SrxPb(1-x)S composite materials were synthesized and investigated. Addition of 0.4 and 0.8 moles of Sr atoms into the PbS lattice has appreciably reduced the thermal conductivity from 2.2 W/mK to 0.43 W/mK for Sr0.4Pb0.6S composition. Temperature (T) dependence of thermoelectric (TE) properties PbS and and SrxPb(1-x)S nanocomposite material has been studied with in the temperature range of 300 K to 700 K. It is observed that there is reduction in the thermal conductivity of PbS alloy on addition of Sr that is mainly attributed to the scattering centres of Sr in the PbS matrix also the presence of the Sr also plays a role in the refinement of the PbS matrix.

Tuning the carrier scattering mechanism to effectively improve the thermoelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuai, Jing; Mao, Jun; Song, Shaowei

2017-01-01

A high thermoelectric power factor not only enables a potentially high figure of meritZTbut also leads to a large output power density, and hence it is pivotal to find an effective route to improve the power factor.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides.

PubMed

Jood, Priyanka; Ohta, Michihiro

2015-03-16

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS₂-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS₂ sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

PubMed Central

Jood, Priyanka; Ohta, Michihiro

2015-01-01

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor. PMID:28787992

Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe.

PubMed

Samanta, Manisha; Pal, Koushik; Pal, Provas; Waghmare, Umesh V; Biswas, Kanishka

2018-05-02

Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi 2 ) sandwiched between two Bi 2 Se 3 quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κ lat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi 2 Se 3 (κ lat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi 2 ) m (Bi 2 Se 3 ) n . Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κ lat . These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κ lat . Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.

An International Round-Robin Study, Part II: Thermal Diffusivity, Specific Heat and Thermal Conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hsin; Porter, Wallace D; Bottner, Harold

2013-01-01

For bulk thermoelectrics, figure-of-merit, ZT, still needs to improve from the current value of 1.0 - 1.5 to above 2 to be competitive to other alternative technologies. In recent years, the most significant improvements in ZT were mainly due to successful reduction of thermal conductivity. However, thermal conductivity cannot be measured directly at high temperatures. The combined measurements of thermal diffusivity and specific heat and density are required. It has been shown that thermal conductivity is the property with the greatest uncertainty and has a direct influence on the accuracy of the figure of merit. The International Energy Agency (IEA)more » group under the implementing agreement for Advanced Materials for Transportation (AMT) has conducted two international round-robins since 2009. This paper is Part II of the international round-robin testing of transport properties of bulk bismuth telluride. The main focuses in Part II are on thermal diffusivity, specific heat and thermal conductivity.« less

Superparamagnetic enhancement of thermoelectric performance.

PubMed

Zhao, Wenyu; Liu, Zhiyuan; Sun, Zhigang; Zhang, Qingjie; Wei, Ping; Mu, Xin; Zhou, Hongyu; Li, Cuncheng; Ma, Shifang; He, Danqi; Ji, Pengxia; Zhu, Wanting; Nie, Xiaolei; Su, Xianli; Tang, Xinfeng; Shen, Baogen; Dong, Xiaoli; Yang, Jihui; Liu, Yong; Shi, Jing

2017-09-13

The ability to control chemical and physical structuring at the nanometre scale is important for developing high-performance thermoelectric materials. Progress in this area has been achieved mainly by enhancing phonon scattering and consequently decreasing the thermal conductivity of the lattice through the design of either interface structures at nanometre or mesoscopic length scales or multiscale hierarchical architectures. A nanostructuring approach that enables electron transport as well as phonon transport to be manipulated could potentially lead to further enhancements in thermoelectric performance. Here we show that by embedding nanoparticles of a soft magnetic material in a thermoelectric matrix we achieve dual control of phonon- and electron-transport properties. The properties of the nanoparticles-in particular, their superparamagnetic behaviour (in which the nanoparticles can be magnetized similarly to a paramagnet under an external magnetic field)-lead to three kinds of thermoelectromagnetic effect: charge transfer from the magnetic inclusions to the matrix; multiple scattering of electrons by superparamagnetic fluctuations; and enhanced phonon scattering as a result of both the magnetic fluctuations and the nanostructures themselves. We show that together these effects can effectively manipulate electron and phonon transport at nanometre and mesoscopic length scales and thereby improve the thermoelectric performance of the resulting nanocomposites.

Compositional disorder and its effect on the thermoelectric performance of Zn₃P₂ nanowire-copper nanoparticle composites.

PubMed

Brockway, Lance; Vasiraju, Venkata; Vaddiraju, Sreeram

2014-03-28

Recent studies indicated that nanowire format of materials is ideal for enhancing the thermoelectric performance of materials. Most of these studies were performed using individual nanowires as the test elements. It is not currently clear whether bulk assemblies of nanowires replicate this enhanced thermoelectric performance of individual nanowires. Therefore, it is imperative to understand whether enhanced thermoelectric performance exhibited by individual nanowires can be extended to bulk assemblies of nanowires. It is also imperative to know whether the addition of metal nanoparticle to semiconductor nanowires can be employed for enhancing their thermoelectric performance further. Specifically, it is important to understand the effect of microstructure and composition on the thermoelectric performance on bulk compound semiconductor nanowire-metal nanoparticle composites. In this study, bulk composites composed of mixtures of copper nanoparticles with either unfunctionalized or 1,4-benzenedithiol (BDT) functionalized Zn₃P₂ nanowires were fabricated and analyzed for their thermoelectric performance. The results indicated that use of BDT functionalized nanowires for the fabrication of composites leads to interface-engineered composites that have uniform composition all across their cross-section. The interface engineering allows for increasing their Seebeck coefficients and electrical conductivities, relative to the Zn₃P₂ nanowire pellets. In contrast, the use of unfunctionalized Zn₃P₂ nanowires for the fabrication of composite leads to the formation of composites that are non-uniform in composition across their cross-section. Ultimately, the composites were found to have Zn₃P₂ nanowires interspersed with metal alloy nanoparticles. Such non-uniform composites exhibited very high electrical conductivities, but slightly lower Seebeck coefficients, relative to Zn₃P₂ nanowire pellets. These composites were found to show a very high zT of 0.23 at 770 K, orders of magnitude higher than either interface-engineered composites or Zn₃P₂ nanowire pellets. The results indicate that microstructural composition of semiconductor nanowire-metal nanoparticle composites plays a major role in determining their thermoelectric performance, and such composites exhibit enhanced thermoelectric performance.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, F.S.; Nelson, A.J.

1996-01-16

A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

Thermoelectric Properties of the Quasi-Binary MnSi1.73-FeSi2 System

NASA Astrophysics Data System (ADS)

Sadia, Yatir; Madar, Naor; Kaler, Ilan; Gelbstein, Yaniv

2015-06-01

The higher manganese silicides (HMS) are regarded as very attractive p-type thermoelectric materials for direct conversion of heat to electricity. To compete with other thermodynamic engines (e.g. the Stirling and Rankine cycles), however, the thermoelectric figure of merit of such silicides must be improved. HMS follow a complicated solidification reaction on cooling from the melt, which leads to formation of undesired secondary phases. Furthermore, the electronic carrier concentration of HMS is much higher than the optimum for thermoelectric applications and should be compensated by introduction of doping agents. In this research, the electronic donor action associated with substitution of HMS by FeSi2 was investigated. The effects of excess Si on phase distribution and thermoelectric properties are also discussed in detail.

Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films

NASA Astrophysics Data System (ADS)

Kudo, Kohei; Yamada, Shinya; Chikada, Jinichiro; Shimanuki, Yuta; Nakamura, Yoshiaki; Hamaya, Kohei

2018-04-01

We study the effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2- x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

PubMed Central

Chen, Xin; Parker, David; Singh, David J.

2013-01-01

We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

Improved thermoelectric power output from multilayered polyethylenimine doped carbon nanotube based organic composites

NASA Astrophysics Data System (ADS)

Hewitt, Corey A.; Montgomery, David S.; Barbalace, Ryan L.; Carlson, Rowland D.; Carroll, David L.

2014-05-01

By appropriately selecting the carbon nanotube type and n-type dopant for the conduction layers in a multilayered carbon nanotube composite, the total device thermoelectric power output can be increased significantly. The particular materials chosen in this study were raw single walled carbon nanotubes for the p-type layers and polyethylenimine doped single walled carbon nanotubes for the n-type layers. The combination of these two conduction layers leads to a single thermocouple Seebeck coefficient of 96 ± 4 μVK-1, which is 6.3 times higher than that previously reported. This improved Seebeck coefficient leads to a total power output of 14.7 nW per thermocouple at the maximum temperature difference of 50 K, which is 44 times the power output per thermocouple for the previously reported results. Ultimately, these thermoelectric power output improvements help to increase the potential use of these lightweight, flexible, and durable organic multilayered carbon nanotube based thermoelectric modules in low powered electronics applications, where waste heat is available.

Large enhancement of thermoelectric effects in a tunneling-coupled parallel DQD-AB ring attached to one normal and one superconducting lead

NASA Astrophysics Data System (ADS)

Yao, Hui; Zhang, Chao; Li, Zhi-Jian; Nie, Yi-Hang; Niu, Peng-bin

2018-05-01

We theoretically investigate the thermoelectric properties in a tunneling-coupled parallel DQD-AB ring attached to one normal and one superconducting lead. The role of the intrinsic and extrinsic parameters in improving thermoelectric properties is discussed. The peak value of figure of merit near gap edges increases with the asymmetry parameter decreasing, particularly, when asymmetry parameter is less than 0.5, the figure of merit near gap edges rapidly rises. When the interdot coupling strengh is less than the superconducting gap the thermopower spectrum presents a single-platform structure. While when the interdot coupling strengh is larger than the gap, a double-platform structure appears in thermopower spectrum. Outside the gap the peak values of figure of merit might reach the order of 102. On the basis of optimizing internal parameters the thermoelectric conversion efficiency of the device can be further improved by appropriately matching the total magnetic flux and the flux difference between two subrings.

Oxide Thermoelectric Materials: A Structure-Property Relationship

NASA Astrophysics Data System (ADS)

Nag, Abanti; Shubha, V.

2014-04-01

Recent demand for thermoelectric materials for power harvesting from automobile and industrial waste heat requires oxide materials because of their potential advantages over intermetallic alloys in terms of chemical and thermal stability at high temperatures. Achievement of thermoelectric figure of merit equivalent to unity ( ZT ≈ 1) for transition-metal oxides necessitates a second look at the fundamental theory on the basis of the structure-property relationship giving rise to electron correlation accompanied by spin fluctuation. Promising transition-metal oxides based on wide-bandgap semiconductors, perovskite and layered oxides have been studied as potential candidate n- and p-type materials. This paper reviews the correlation between the crystal structure and thermoelectric properties of transition-metal oxides. The crystal-site-dependent electronic configuration and spin degeneracy to control the thermopower and electron-phonon interaction leading to polaron hopping to control electrical conductivity is discussed. Crystal structure tailoring leading to phonon scattering at interfaces and nanograin domains to achieve low thermal conductivity is also highlighted.

Engineering of lead chalcogenide nanostructures for carrier multiplication: Core/shell, 1D, and 2D

NASA Astrophysics Data System (ADS)

Lin, Qianglu

Near infrared emitting semiconductors have been used widely in industry especially in solar-cell fabrications. The efficiency of single junction solar-cell can reach the Shockley-Queisser limit by using optimum band gap material such as silicon and cadmium telluride. The theoretical efficiency can be further enhanced through carrier multiplication, in which a high energy photon is absorbed and more than one electron-hole pair can be generated, reaching more than 100% quantum efficiency in the high energy region of sunlight. The realization of more than unity external quantum efficiency in lead selenide quantum dots solar cell has motivated vast investigation on lowering the carrier multiplication threshold and further improving the efficiency. This dissertation focuses on synthesis of lead chalcogenide nanostructures for their optical spectroscopy studies. PbSe/CdSe core/shell quantum dots were synthesized by cation exchange to obtain thick shells (up to 14 monolayers) for studies of visible and near infrared dual band emissions and carrier multiplication efficiency. By examining the reaction mechanism, a thermodynamic and a kinetic model are introduced to explain the vacancy driven cation exchange. As indicated by the effective mass model, PbSe/CdSe core/shell quantum dots has quasi-type-II band alignment, possessing electron delocalized through the entire quantum dot and hole localized in the core, which breaks down the symmetry of energy levels in the conduction and valence band, leading to hot-hole-assisted efficient multi-exciton generation and a lower carrier multiplication threshold to the theoretical value. For further investigation of carrier multiplication study, PbTe, possessing the highest efficiency among lead chalcogenides due to slow intraband cooling, is synthesized in one-dimensional and two-dimensional nanostructures. By using dodecanethiol as the surfactant, PbTe NRs can be prepared with high uniformity in width and resulted in fine quantum confinement features. The reaction can be explained by a soft-template assisted process, in which the lamellar lead-thiolate precursor transforms into rod-shape micelle in the existence of telluride anions by electrostatic attraction. Fine tuning the reaction condition by changing the solvent to oleylamine, lead telluride nanowires with length up to 200 nm can be prepared, which bundled together because of the strong dipole-dipole attraction between nanowires. Decreasing the amount of surfactant dodecanethiol in the synthesis produces lead telluride nanorings, which formed by attaching four small particles together, leaving the center void. To prepare two-dimensional nanoplatelets, mixture ligands containing two amines with different carbon chain length were used, which initiate oriented attachment of the nanoparticles to form square-shape nanoplatelets. By further adopting stronger binding ligands such as phosphonic acid, PbTe nanoplatelets with micrometer lateral dimension were prepared with extremely sharp near infrared photoluminescence (less than 40 meV), which has never be achieved in quantum dots and other nanostructures.

Improved thermoelectric performance of p-type polycrystalline bismuth telluride via hydrothermal treatment with alkali metal salts

NASA Astrophysics Data System (ADS)

Su, Zhe

The field of thermoelectric research has attracted a lot of interest in hope of helping address the energy crisis. In recent years, low-dimensional thermoelectric materials have been found promising and thus become a popular school of thought. However, the high complexity and cost for fabricating low-dimensional materials give rise to the attempt to further improve conventional bulk polycrystalline materials. Polycrystals are featured by numerous grain boundaries that can scatter heat-carrying phonons to significantly reduce the thermal conductivity kappa whereas at the same time can unfortunately deteriorate the electrical resistivity rho. Aiming at the dualism of the grain boundaries in determining the transport properties of polycrystalline materials, a novel concept of "grain boundary engineering" has been proposed in order to have a thermoelectrically favorable grain boundary. In this dissertation, a polycrystalline p-type Bi2Te 3 system has been intensively investigated in light of such a concept that was realized through a hydrothermal nano-coating treatment technique. P-type Bi0.4Sb1.6Te3 powder was hydrothermally treated with alkali metal salt XBH4 ( X = Na, K or Rb) solution. After the treatment, there formed an alkali-metal-containing surface layer of nanometers thick on the p-Bi2Te3 grains. The Na-treatment, leaving the Seebeck coefficient alpha almost untouched, lowered kappa the most while the Rb-treatment at the same time increased alpha slightly and decreased rho the most. Compared to the untreated sample, Na- and Rb-treatments improved the dimensionless figure of merit ZT by ˜ 30% due to the reduced kappa and ˜ 38% owing to the improved the power factor PF, respectively. The grain boundary phase provides a new avenue by which one can potentially decouple the otherwise inter-related alpha, rho and kappa within one thermoelectric material. The morphologic investigation showed this surface layer lacked crystallinity, if any, and was possibly an amorphous phase. Once Na- and Rb-treatments with various molar ratios were applied to the same sample, a similar grain boundary layer formed with a compositional gradient along the depth direction. The Hall effect measurements showed that the grain boundary phase introduced new carriers into the system and thereby compensated the loss in mobility. With alpha almost untouched, the rho to kappa ratio has been optimized by varying the Na:Rb ratio in the starting solution. As a result, the Na:Rb = 1:2 ratio yielded the best ZT value of ˜ 0.92 at 350K, comparable with that of the state-of-the-art p-Bi2Te3 commercial ingot. Besides ZT, the hydrothermal treatment lessened the temperature dependence of compatibility factor S of as-treated polycrystalline samples, helping a thermoelectric device have overall better performance even if it did not work under its optimal condition.

The Effect of Microgravity on the Growth of Lead Tin Telluride

NASA Technical Reports Server (NTRS)

Narayanan, R.

2000-01-01

The main objective of this research was to present a model for the prediction of the effect of the microgravity environment on the growth of Lead Tin Telluride. The attitude change and its relation to the experimental objectives: The main objective for the AADSF experiment on USMP 3 involving LTT growth was to estimate the effect of ampoule orientation on the axial and radial segregation of tin telluride. As the furnace was not situated on a gimbal there was no possibility to reorient the ampoule during the flight. Instead the only way to change the growth orientation was to change the attitude of the orbiter. This was accomplished by vernier rocket firings. In what follows it must be noted that the orbiter body coordinates are such that the positive z axis points outward from the 'belly', the positive 'x' axis points outwards from the nose and the positive 'y' axis points outwards from the starboard side. The furnace which was in the pay load had its axis aligned with the orbiter's 'z' axis with the hot end closest to the shuttle body. There were basically three orientations that were desired. These corresponded to the ampoule being seen as a heated from above (thermally stable-solutally unstable) configuration, the heated from below (where the instabilities were reversed from the first orientation) configuration and an 'in between' case where the ampoule axis was misaligned with respect to the orbiters 'g(sub z)' axis.

Development of Perovskite-Type Materials for Thermoelectric Application.

PubMed

Wu, Tingjun; Gao, Peng

2018-06-12

Oxide perovskite materials have a long history of being investigated for thermoelectric applications. Compared to the state-of-the-art tin and lead chalcogenides, these perovskite compounds have advantages of low toxicity, eco-friendliness, and high elemental abundance. However, because of low electrical conductivity and high thermal conductivity, the total thermoelectric performance of oxide perovskites is relatively poor. Variety of methods were used to enhance the TE properties of oxide perovskite materials, such as doping, inducing oxygen vacancy, embedding crystal imperfection, and so on. Recently, hybrid perovskite materials started to draw attention for thermoelectric application. Due to the low thermal conductivity and high Seebeck coefficient feature of hybrid perovskites materials, they can be promising thermoelectric materials and hold the potential for the application of wearable energy generators and cooling devices. This mini-review will build a bridge between oxide perovskites and burgeoning hybrid halide perovskites in the research of thermoelectric properties with an aim to further enhance the relevant performance of perovskite-type materials.

Searching for the best thermoelectrics through the optimization of transport distribution function

NASA Astrophysics Data System (ADS)

Fan, Zheyong; Wang, Hui-Qiong; Zheng, Jin-Cheng

2011-04-01

The thermoelectric performance of materials is dependent on the interplay or competition among three key components, the electrical conductivity, thermopower, and thermal conductivity, which can be written as integrals of a single function, the transport distribution function (TDF). Mahan and Sofo [Proc. Natl. Acad. Sci. USA 93, 7436 (1996)] found that, mathematically, the thermoelectric properties could be maximized by a delta-shaped transport distribution, which was associated with a narrow distribution of the energy of the electrons participating in the transport process. In this work, we revisited the shape effect of TDF on thermoelectric figure of merit. It is confirmed both heuristically and numerically that among all the normalized TDF the Dirac delta function leads to the largest thermoelectric figure of merit. Whereas, for the case of TDF being bounded, a rectangular-shape distribution is instead found to be the most favorable one, which could be achieved through nanoroute. Our results also indicate that high thermoelectric figure of merit is associated with appropriate violations of the Wiedemann-Franz law.

Modeling a Thermoelectric Generator Applied to Diesel Automotive Heat Recovery

NASA Astrophysics Data System (ADS)

Espinosa, N.; Lazard, M.; Aixala, L.; Scherrer, H.

2010-09-01

Thermoelectric generators (TEGs) are outstanding devices for automotive waste heat recovery. Their packaging, lack of moving parts, and direct heat to electrical conversion are the main benefits. Usually, TEGs are modeled with a constant hot-source temperature. However, energy in exhaust gases is limited, thus leading to a temperature decrease as heat is recovered. Therefore thermoelectric properties change along the TEG, affecting performance. A thermoelectric generator composed of Mg2Si/Zn4Sb3 for high temperatures followed by Bi2Te3 for low temperatures has been modeled using engineering equation solver (EES) software. The model uses the finite-difference method with a strip-fins convective heat transfer coefficient. It has been validated on a commercial module with well-known properties. The thermoelectric connection and the number of thermoelements have been addressed as well as the optimum proportion of high-temperature material for a given thermoelectric heat exchanger. TEG output power has been estimated for a typical commercial vehicle at 90°C coolant temperature.

Self-Consistent Drift-Diffusion Transport in Thermoelectrics and Implications for Measuring the Scattering Parameter

NASA Astrophysics Data System (ADS)

Santhanam, Parthiban; Ram, Rajeev J.

2010-09-01

We present a microscopic model of the Seebeck effect based on a generalized drift-diffusion equation and use it to predict a simple relationship between the electric field within an operating thermoelectric and the scattering parameter. Our model replicates existing theoretical results and permits an intuitive spatial picture of the Seebeck effect. A similar formalism was independently developed by Cai and Mahan, but this work includes numerical results for high dopant concentrations where the thermoelectric power factor is maximized. Based on these results, we propose that measurement of the bulk electric field should constitute a measurement of the scattering parameter, the improvement of which could lead to greater thermoelectric efficiency.

Large thermoelectric efficiency of doped polythiophene junction: A density functional study

NASA Astrophysics Data System (ADS)

Golsanamlou, Zahra; Bagheri Tagani, Meysam; Rahimpour Soleimani, Hamid

2018-06-01

The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the presence of dopants can bring the structural changes in the oligomer and modify the arrangement of the molecular levels leading to the dramatic changes in the transmission spectra of the junction. Therefore, the large enhancement in thermopower and consequently figure of merit is obtained by dopants which makes the doped PT junction as a beneficial thermoelectric device.

Thermoelectric and mechanical properties of multi-walled carbon nanotube doped Bi0.4Sb1.6Te3 thermoelectric material

NASA Astrophysics Data System (ADS)

Ren, Fei; Wang, Hsin; Menchhofer, Paul A.; Kiggans, James O.

2013-11-01

Since many thermoelectrics are brittle in nature with low mechanical strength, improving their mechanical properties is important to fabricate devices such as thermoelectric power generators and coolers. In this work, multiwalled carbon nanotubes (CNTs) were incorporated into polycrystalline Bi0.4Sb1.6Te3 through powder processing, which increased the flexural strength from 32 MPa to 90 MPa. Electrical and thermal conductivities were both reduced in the CNT containing materials, leading to unchanged figure of merit. Dynamic Young's and shear moduli of the composites were lower than the base material, while the Poisson's ratio was not affected by CNT doping.

N-type Doped PbTe and PbSe Alloys for Thermoelectric Applications

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey (Inventor); LaLonde, Aaron (Inventor); Pei, Yanzhong (Inventor); Wang, Heng (Inventor)

2014-01-01

The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe.sub.1-xI.sub.x with carrier concentrations ranging from 5.8.times.10.sup.18-1.4.times.10.sup.20 cm.sup.-3.

Estimation of Phonon and Carrier Thermal Conductivities for Bulk Thermoelectric Materials Using Transport Properties

NASA Astrophysics Data System (ADS)

Otsuka, Mioko; Homma, Ryoei; Hasegawa, Yasuhiro

2017-05-01

The phonon and carrier thermal conductivities of thermoelectric materials were calculated using the Wiedemann-Franz law, Boltzmann equation, and a method we propose in this study called the Debye specific heat method. We prepared polycrystalline n-type doped bismuth telluride (BiTe) and bismuth antimony (BiSb) bulk alloy samples and measured six parameters (Seebeck coefficient, resistivity, thermal conductivity, thermal diffusivity, magneto-resistivity, and Hall coefficient). The carrier density and mobility were estimated for calculating the carrier thermal conductivity by using the Boltzmann equation. In the Debye specific heat method, the phonon thermal diffusivity, and thermal conductivity were calculated from the temperature dependence of the effective specific heat by using not only the measured thermal conductivity and Debye model, but also the measured thermal diffusivity. The carrier thermal conductivity was also evaluated from the phonon thermal conductivity by using the specific heat. The ratio of carrier thermal conductivity to thermal conductivity was evaluated for the BiTe and BiSb samples, and the values obtained using the Debye specific heat method at 300 K were 52% for BiTe and <5.5% for BiSb. These values are either considerably larger or smaller than those obtained using other methods. The Dulong-Petit law was applied to validate the Debye specific heat method at 300 K, which is significantly greater than the Debye temperature of the BiTe and BiSb samples, and it was confirmed that the phonon specific heat at 300 K has been accurately reproduced using our proposed method.

Conversion efficiency of skutterudite-based thermoelectric modules.

PubMed

Salvador, James R; Cho, Jung Y; Ye, Zuxin; Moczygemba, Joshua E; Thompson, Alan J; Sharp, Jeffrey W; Koenig, Jan D; Maloney, Ryan; Thompson, Travis; Sakamoto, Jeffrey; Wang, Hsin; Wereszczak, Andrew A

2014-06-28

Presently, the only commercially available power generating thermoelectric (TE) modules are based on bismuth telluride (Bi2Te3) alloys and are limited to a hot side temperature of 250 °C due to the melting point of the solder interconnects and/or generally poor power generation performance above this point. For the purposes of demonstrating a TE generator or TEG with higher temperature capability, we selected skutterudite based materials to carry forward with module fabrication because these materials have adequate TE performance and are mechanically robust. We have previously reported the electrical power output for a 32 couple skutterudite TE module, a module that is type identical to ones used in a high temperature capable TEG prototype. The purpose of this previous work was to establish the expected power output of the modules as a function of varying hot and cold side temperatures. Recent upgrades to the TE module measurement system built at the Fraunhofer Institute for Physical Measurement Techniques allow for the assessment of not only the power output, as previously described, but also the thermal to electrical energy conversion efficiency. Here we report the power output and conversion efficiency of a 32 couple, high temperature skutterudite module at varying applied loading pressures and with different interface materials between the module and the heat source and sink of the test system. We demonstrate a 7% conversion efficiency at the module level when a temperature difference of 460 °C is established. Extrapolated values indicate that 7.5% is achievable when proper thermal interfaces and loading pressures are used.

Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4

NASA Astrophysics Data System (ADS)

Zhu, Yingcai; Liu, Yong; Tan, Xing; Ren, Guangkun; Yu, Meijuan; Hu, Tiandou; Marcelli, Augusto; Xu, Wei

2018-04-01

Quaternary chalcogenide Cu2ZnSnSe4 (CZTSe) is a promising wide band-gap p-type thermoelectric material. The structure and thermoelectric properties of lead substituted Cu2ZnSn1-xPbxSe4 are investigated. Lead primarily exists in the framework of PbSe as demonstrated by x-ray diffraction and calculation of x-ray absorption near-edge structure spectroscopy. The second phase distributes at the boundaries of CZTSe with thickness in several hundreds of nanometer. With appropriate grain boundary engineering, the enhancement of power factor and a decrease of thermal conductivity can be achieved simultaneously. As a result, a maximum figure of merit zT of 0.45 is obtained for the sample with x=0.02 at 723K.

Convergence of electronic bands for high performance bulk thermoelectrics.

PubMed

Pei, Yanzhong; Shi, Xiaoya; LaLonde, Aaron; Wang, Heng; Chen, Lidong; Snyder, G Jeffrey

2011-05-05

Thermoelectric generators, which directly convert heat into electricity, have long been relegated to use in space-based or other niche applications, but are now being actively considered for a variety of practical waste heat recovery systems-such as the conversion of car exhaust heat into electricity. Although these devices can be very reliable and compact, the thermoelectric materials themselves are relatively inefficient: to facilitate widespread application, it will be desirable to identify or develop materials that have an intensive thermoelectric materials figure of merit, zT, above 1.5 (ref. 1). Many different concepts have been used in the search for new materials with high thermoelectric efficiency, such as the use of nanostructuring to reduce phonon thermal conductivity, which has led to the investigation of a variety of complex material systems. In this vein, it is well known that a high valley degeneracy (typically ≤6 for known thermoelectrics) in the electronic bands is conducive to high zT, and this in turn has stimulated attempts to engineer such degeneracy by adopting low-dimensional nanostructures. Here we demonstrate that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition. By this route, we achieve a convergence of at least 12 valleys in doped PbTe(1-x)Se(x) alloys, leading to an extraordinary zT value of 1.8 at about 850 kelvin. Band engineering to converge the valence (or conduction) bands to achieve high valley degeneracy should be a general strategy in the search for and improvement of bulk thermoelectric materials, because it simultaneously leads to a high Seebeck coefficient and high electrical conductivity. ©2011 Macmillan Publishers Limited. All rights reserved

Solid state transport-based thermoelectric converter

DOEpatents

Hu, Zhiyu

2010-04-13

A solid state thermoelectric converter includes a thermally insulating separator layer, a semiconducting collector and an electron emitter. The electron emitter comprises a metal nanoparticle layer or plurality of metal nanocatalyst particles disposed on one side of said separator layer. A first electrically conductive lead is electrically coupled to the electron emitter. The collector layer is disposed on the other side of the separator layer, wherein the thickness of the separator layer is less than 1 .mu.m. A second conductive lead is electrically coupled to the collector layer.

The Relation of Batteries to Explosives.

DTIC Science & Technology

1980-09-01

aqueous systems was discussed for the mercury and lead acid systems. If initiation of an explosive reaction does not occur, these gases can 4-2 - ~W...Interfacial Electrochemistry, 53, (1974), 329-333. 2 5Mills, K. C., Therodynamic Data for Inorganic Sulphides , Selenides and Tellurides, 1974, p. 26

Improved thermoelectric power output from multilayered polyethylenimine doped carbon nanotube based organic composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hewitt, Corey A.; Montgomery, David S.; Barbalace, Ryan L.

2014-05-14

By appropriately selecting the carbon nanotube type and n-type dopant for the conduction layers in a multilayered carbon nanotube composite, the total device thermoelectric power output can be increased significantly. The particular materials chosen in this study were raw single walled carbon nanotubes for the p-type layers and polyethylenimine doped single walled carbon nanotubes for the n-type layers. The combination of these two conduction layers leads to a single thermocouple Seebeck coefficient of 96 ± 4 μVK{sup −1}, which is 6.3 times higher than that previously reported. This improved Seebeck coefficient leads to a total power output of 14.7 nW permore » thermocouple at the maximum temperature difference of 50 K, which is 44 times the power output per thermocouple for the previously reported results. Ultimately, these thermoelectric power output improvements help to increase the potential use of these lightweight, flexible, and durable organic multilayered carbon nanotube based thermoelectric modules in low powered electronics applications, where waste heat is available.« less

La-doped SrTiO3 films with large cryogenic thermoelectric power factors

NASA Astrophysics Data System (ADS)

Cain, Tyler A.; Kajdos, Adam P.; Stemmer, Susanne

2013-05-01

The thermoelectric properties at temperatures between 10 K and 300 K of La-doped SrTiO3 thin films grown by hybrid molecular beam epitaxy (MBE) on undoped SrTiO3 substrates are reported. Below 50 K, the Seebeck coefficients exhibit very large magnitudes due to the influence of phonon drag. Combined with high carrier mobilities, exceeding 50 000 cm2 V-1 s-1 at 2 K for the films with the lowest carrier densities, this leads to thermoelectric power factors as high as 470 μWcm-1 K-2. The results are compared with other promising low temperature thermoelectric materials and discussed in the context of coupling with phonons in the undoped substrate.

Analysis of the accelerated crucible rotation technique applied to the gradient freeze growth of cadmium zinc telluride

NASA Astrophysics Data System (ADS)

Divecha, Mia S.; Derby, Jeffrey J.

2017-06-01

We employ finite-element modeling to assess the effects of the accelerated crucible rotation technique (ACRT) on cadmium zinc telluride (CZT) crystals grown from a gradient freeze system. Via consideration of tellurium segregation and transport, we show, for the first time, that steady growth from a tellurium-rich melt produces persistent undercooling in front of the growth interface, likely leading to morphological instability. The application of ACRT rearranges melt flows and tellurium transport but, in contrast to conventional wisdom, does not altogether eliminate undercooling of the melt. Rather, a much more complicated picture arises, where spatio-temporal realignment of undercooled melt may act to locally suppress instability. A better understanding of these mechanisms and quantification of their overall effects will allow for future growth optimization.

Thermomagnetic coolers based on Bi and Bi-Sb nanocomposites

NASA Astrophysics Data System (ADS)

Huber, Tito E.; Constant, Pierre

2001-02-01

Bulk Bi, a semimetal, and Bi-Sb, have the highest thermoelectric figure of merit Z at 100 K. The thermoelectric properties of these materials are strongly anisotropic. The best thermoelectric performance is observed when the electrical current flows along the trigonal axis. However, Bi single crystals are easily cleaved along the trigonal planes. This lack of strength has largely prevented the use of these materials in practical thermoelectric coolers. Composite technology offers the opportunity to increase the toughness of Bi and Bi-Sb. Also, microengineering Bi into composites may lead to a significant improvement in their thermoelectric performance, because of the reduction of phonon conductivity from phonon scattering at the grain boundaries and interfaces. It has been shown theoretically that quantum-wire structures have the potential to significantly improve Z over the bulk value. We have synthesized microwire composites and present measurements of its electrical conductivity and Seebeck coefficient that are very encouraging. The role that a tough thermoelectric cooler could have in extending the lifetime of a space system such as Space InfraRed Telescope Facility (SIRTF) is briefly discussed. .

Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

NASA Astrophysics Data System (ADS)

Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

2016-10-01

The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

Spin-dependent heat and thermoelectric currents in a Rashba ring coupled to a photon cavity

NASA Astrophysics Data System (ADS)

Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar

2018-01-01

Spin-dependent heat and thermoelectric currents in a quantum ring with Rashba spin-orbit interaction placed in a photon cavity are theoretically calculated. The quantum ring is coupled to two external leads with different temperatures. In a resonant regime, with the ring structure in resonance with the photon field, the heat and the thermoelectric currents can be controlled by the Rashba spin-orbit interaction. The heat current is suppressed in the presence of the photon field due to contribution of the two-electron and photon replica states to the transport while the thermoelectric current is not sensitive to changes in parameters of the photon field. Our study opens a possibility to use the proposed interferometric device as a tunable heat current generator in the cavity photon field.

Thermoelectric Figure-of-Merit of Nanostructured Silicon with a Low Concentration of Germanium

NASA Astrophysics Data System (ADS)

Zhu, Gaohua; Lee, Hohyun; Lan, Yucheng; Wang, Xiaowei; Joshi, Giri; Wang, Dezhi; Yang, Jian; Dresselhaus, Mildred; Chen, Gang; Ren, Zhifeng

2009-03-01

The thermoelectric properties of nanostructured silicon (Si) with a low concentration of germanium (Ge) are investigated. A low concentration of Ge leads to a significant cost reduction of the final product since Ge is at least 100 times more expensive than Si. By using only 5 atomic % Ge (Si95Ge5), we have achieved a thermoelectric figure-of-merit (ZT) of 0.95, similar to the ZT in the large grained Si80Ge20 alloy that is three times more expensive, and is almost four times that of the large grained bulk Si. The enhancement in the thermoelectric ZT for the nanostructured Si95Ge5 is mostly due to the reduced thermal conductivity caused by phonon scattering at the increased grain boundaries and the Ge alloying effect.

Evolution of microstructural disorder in annealed bismuth telluride nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erickson, Kristopher J.; Limmer, Steven J.; Yelton, W. Graham

Controlling the distribution of structural defects in nanostructures is important since such defects can strongly affect critical properties, including thermal and electronic transport. However, characterizing the defect arrangements in individual nanostructures is difficult because of the small length scales involved. Here, we investigate the evolution of microstructural disorder with annealing in electrochemically deposited Bi2Te3 nanowires, which are of interest for thermoelectrics. We combine Convergent Beam Electron Diffraction (CBED) and Scanning Transmission Electron Microscopy (STEM) to provide the necessary spatial and orientational resolution. We find that despite their large initial grain sizes and strong Formula crystallographic texturing, the as-deposited nanowires stillmore » exhibit significant intragranular orientational disorder. Annealing drives both grain growth and a significant reduction in the intragranular disorder. The results are discussed in the context of the existing understanding of the initial microstructure of electrodeposited materials and the understanding of annealing microstructures in both electrochemically deposited and bulk-deformed materials. Finally, this analysis highlights the importance of assessing both the grain size and intragranular disorder in understanding the microstructural evolution of individual nanostructures.« less

Evolution of microstructural disorder in annealed bismuth telluride nanowires

DOE PAGES

Erickson, Kristopher J.; Limmer, Steven J.; Yelton, W. Graham; ...

2017-03-01

Controlling the distribution of structural defects in nanostructures is important since such defects can strongly affect critical properties, including thermal and electronic transport. However, characterizing the defect arrangements in individual nanostructures is difficult because of the small length scales involved. Here, we investigate the evolution of microstructural disorder with annealing in electrochemically deposited Bi2Te3 nanowires, which are of interest for thermoelectrics. We combine Convergent Beam Electron Diffraction (CBED) and Scanning Transmission Electron Microscopy (STEM) to provide the necessary spatial and orientational resolution. We find that despite their large initial grain sizes and strong Formula crystallographic texturing, the as-deposited nanowires stillmore » exhibit significant intragranular orientational disorder. Annealing drives both grain growth and a significant reduction in the intragranular disorder. The results are discussed in the context of the existing understanding of the initial microstructure of electrodeposited materials and the understanding of annealing microstructures in both electrochemically deposited and bulk-deformed materials. Finally, this analysis highlights the importance of assessing both the grain size and intragranular disorder in understanding the microstructural evolution of individual nanostructures.« less

Lead-Tin Telluride Sputtered Thin Films for Infrared Sensors

DTIC Science & Technology

1975-06-01

Concentrations in Pfa .78Sn,22Te Fllms " Tar8et *10 Effect of Substrate Bias Voltage on As-Deposited Carrier Concentration - Target #12 Effect of...be laid down in one deposition run with one target by simple bias voltage control. 3252 Sorption Coef"^^ *"* Energy Gaps. Typical plots

Testing and Further Development of Improved Etches and Etching Methods for the Analysis of Bridgman Grown Semiconductor Crystals with an Emphasis on Lead-Tin-Telluride

NASA Technical Reports Server (NTRS)

Barber, Patrick G.

1998-01-01

The goals outlined for the research project for this year have been completed, and the following supporting documentation is attached: 1. A copy of the proposal outlining the principal goals: (a) Improve the characterization of semiconductor crystals through new etches and etching procedures. (b) Developed a novel voltammetric method to characterize semiconductor crystals as a result of searching for improved etches for lead-tin-telluride. (c) Presented paper at ACCG- 10. (d) Prepared manuscripts for publication. Completed additional testing suggested by reviewers and re-submitted manuscripts. (e) Worked with an undergraduate student on this project to provide her an opportunity to have a significant research experience prior to graduation. 2. In addition to the anticipated goals the following were also accomplished: (a) Submitted the newly developed procedures for consideration as a patent or a NASA Tech Brief. (b) Submitted a paper for presentation at the forthcoming ICCG- 12 conference. 3. A copy of the final draft of the publication as submitted to the editors of the Journal of Crystal Growth.

Extraordinary Thermoelectric Performance Realized in Hierarchically Structured AgSbSe2 with Ultralow Thermal Conductivity.

PubMed

Gao, Weihong; Wang, Zhenyou; Huang, Jin; Liu, Zihang

2018-05-24

Thermoelectric conversion from low-grade heat to electricity is regarded as the highly reliable and environmentally friendly technology in energy-harvesting area. However, how to develop efficient thermoelectric materials using a simple fabrication method is still a critical challenge in thermoelectric community. Here, we first fabricate the high thermoelectric performance of Ca-doped AgSbSe 2 with a hierarchical microstructure using a facile approach, namely, mechanical alloying (for only 30 min) and a quick hot-pressing method. The hierarchical microstructure, including point defects (atomic scale), dislocations, and nanoprecipitates (nanoscale) as well as grain boundaries (microscale), strongly scatters phonons with comparable sizes without deterioration of carrier mobility. Because of the higher carrier concentration of nanostructured AgSbSe 2 than that of coarse-grain AgSbSe 2 , power factor can also be improved slightly after nanostructuring. Ca doping further optimizes the carrier concentration and creates the point-defect scattering of phonons, leading to the ultralow lattice thermal conductivity ∼0.27 W m -1 K -1 at 673 K and thus largely improving the peak ZT up to 1.2. The high thermoelectric performance in combination with a facile fabrication method highlights AgSbSe 2 -based materials as robust thermoelectric candidates for energy harvesting.

Thermoelectrics in Coulomb-coupled quantum dots: Cotunneling and energy-dependent lead couplings

NASA Astrophysics Data System (ADS)

Walldorf, Nicklas; Jauho, Antti-Pekka; Kaasbjerg, Kristen

2017-09-01

We study thermoelectric effects in Coulomb-coupled quantum-dot (CCQD) systems beyond lowest-order tunneling processes and the often applied wide-band approximation. To this end, we present a master-equation (ME) approach based on a perturbative T -matrix calculation of the charge and heat tunneling rates and transport currents. Applying the method to transport through a noninteracting single-level QD, we demonstrate excellent agreement with the Landauer-Büttiker theory when higher-order (cotunneling) processes are included in the ME. Next, we study the effect of cotunneling and energy-dependent lead couplings on the heat currents in a system of two CCQDs. We find that cotunneling processes (i) can dominate the off-resonant heat currents at low temperature and bias compared to the interdot interaction, and (ii) give rise to a pronounced reduction of the cooling power achievable with the recently demonstrated Maxwell's demon cooling mechanism. Furthermore, we demonstrate that the cooling power can be boosted significantly by carefully engineering the energy dependence of the lead couplings to filter out undesired transport processes. Our findings emphasize the importance of higher-order cotunneling processes as well as engineered energy-dependent lead couplings in the optimization of the thermoelectric performance of CCQD systems.

Polymer-free carbon nanotube thermoelectrics with improved charge carrier transport and power factor

DOE PAGES

Norton-Baker, Brenna; Ihly, Rachelle; Gould, Isaac E.; ...

2016-11-17

Here, semiconducting single-walled carbon nanotubes (s-SWCNTs) have recently attracted attention for their promise as active components in a variety of optical and electronic applications, including thermoelectricity generation. Here we demonstrate that removing the wrapping polymer from the highly enriched s-SWCNT network leads to substantial improvements in charge carrier transport and thermoelectric power factor. These improvements arise primarily from an increase in charge carrier mobility within the s-SWCNT networks because of removal of the insulating polymer and control of the level of nanotube bundling in the network, which enables higher thin-film conductivity for a given carrier density. Ultimately, these studies demonstratemore » that highly enriched s-SWCNT thin films, in the complete absence of any accompanying semiconducting polymer, can attain thermoelectric power factors in the range of approximately 400 μW m -1K -2, which is on par with that of some of the best single-component organic thermoelectrics demonstrated to date.« less

Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity

PubMed Central

Lee, Myoung-Jae; Ahn, Ji-Hoon; Sung, Ji Ho; Heo, Hoseok; Jeon, Seong Gi; Lee, Woo; Song, Jae Yong; Hong, Ki-Ha; Choi, Byeongdae; Lee, Sung-Hoon; Jo, Moon-Ho

2016-01-01

In general, in thermoelectric materials the electrical conductivity σ and thermal conductivity κ are related and thus cannot be controlled independently. Previously, to maximize the thermoelectric figure of merit in state-of-the-art materials, differences in relative scaling between σ and κ as dimensions are reduced to approach the nanoscale were utilized. Here we present an approach to thermoelectric materials using tin disulfide, SnS2, nanosheets that demonstrated a negative correlation between σ and κ. In other words, as the thickness of SnS2 decreased, σ increased whereas κ decreased. This approach leads to a thermoelectric figure of merit increase to 0.13 at 300 K, a factor ∼1,000 times greater than previously reported bulk single-crystal SnS2. The Seebeck coefficient obtained for our two-dimensional SnS2 nanosheets was 34.7 mV K−1 for 16-nm-thick samples at 300 K. PMID:27323662

Phase-Defined van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties.

PubMed

Wang, Qiaoming; Yang, Liangliang; Zhou, Shengwen; Ye, Xianjun; Wang, Zhe; Zhu, Wenguang; McCluskey, Matthew D; Gu, Yi

2017-07-06

We demonstrate a van der Waals Schottky junction defined by crystalline phases of multilayer In 2 Se 3 . Besides ideal diode behaviors and the gate-tunable current rectification, the thermoelectric power is significantly enhanced in these junctions by more than three orders of magnitude compared with single-phase multilayer In 2 Se 3 , with the thermoelectric figure-of-merit approaching ∼1 at room temperature. Our results suggest that these significantly improved thermoelectric properties are not due to the 2D quantum confinement effects but instead are a consequence of the Schottky barrier at the junction interface, which leads to hot carrier transport and shifts the balance between thermally and field-driven currents. This "bulk" effect extends the advantages of van der Waals materials beyond the few-layer limit. Adopting such an approach of using energy barriers between van der Waals materials, where the interface states are minimal, is expected to enhance the thermoelectric performance in other 2D materials as well.

Functionalized Poly(3,4-ethylenedioxy bithiophene) Films for Tuning Electrochromic and Thermoelectric Properties.

PubMed

Hu, Yongjing; Liu, Xiaofang; Jiang, Fengxing; Zhou, Weiqiang; Liu, Congcong; Duan, Xuemin; Xu, Jingkun

2017-10-05

Conductive thiophene-based polymers have garnered great attention for use in organic electron materials such as electrochromic and thermoelectric materials. However, they suffer from poor electron transport properties and long-term stability, leading to limited development eventually. Here, we proposed a strategy of functionalized thiophene-based polymers with oligo(ethylene glycol) or alkyl side chains and synthesized a series of poly(3,4-ethylenedioxy bithiophene)s (PEDTs) to tune their electrochromic and thermoelectric properties. An alkyl group bearing electronic ability at the thiophene ring effectively achieved a large increase in the electrical conductivity with nearly invariable Seebeck coefficient, resulting in an enhancement by 1 order of magnitude for the thermoelectric power factor. Moreover, the electrochromic properties of functionalized PEDTs gained an effective improvement in the optical contrast and coloration efficiency as well as stability with multicolor changes between neutral and oxidized states. The functionalized PEDTs can be proposed as an alternative strategy to tune the electrochromic and thermoelectric properties for organic polymer materials.

Acido-basic control of the thermoelectric properties of poly(3,4-ethylenedioxythiophene)tosylate (PEDOT-Tos) thin films.

PubMed

Khan, Zia Ullah; Bubnova, Olga; Jafari, Mohammad Javad; Brooke, Robert; Liu, Xianjie; Gabrielsson, Roger; Ederth, Thomas; Evans, Drew R; Andreasen, Jens W; Fahlman, Mats; Crispin, Xavier

2015-10-28

PEDOT-Tos is one of the conducting polymers that displays the most promising thermoelectric properties. Until now, it has been utterly difficult to control all the synthesis parameters and the morphology governing the thermoelectric properties. To improve our understanding of this material, we study the variation in the thermoelectric properties by a simple acido-basic treatment. The emphasis of this study is to elucidate the chemical changes induced by acid (HCl) or base (NaOH) treatment in PEDOT-Tos thin films using various spectroscopic and structural techniques. We could identify changes in the nanoscale morphology due to anion exchange between tosylate and Cl - or OH - . But, we identified that changing the pH leads to a tuning of the oxidation level of the polymer, which can explain the changes in thermoelectric properties. Hence, a simple acid-base treatment allows finding the optimum for the power factor in PEDOT-Tos thin films.

Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics

DOE PAGES

Chen, Zhiwei; Ge, Binghui; Li, Wen; ...

2017-01-04

To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb 1$-$xSb 2x/3Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains.more » This leads to a lattice thermal conductivity as low as 0.4Wm -1 K -1 and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. As a result, the vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.« less

Field-Effect Control of Graphene-Fullerene Thermoelectric Nanodevices.

PubMed

Gehring, Pascal; Harzheim, Achim; Spièce, Jean; Sheng, Yuewen; Rogers, Gregory; Evangeli, Charalambos; Mishra, Aadarsh; Robinson, Benjamin J; Porfyrakis, Kyriakos; Warner, Jamie H; Kolosov, Oleg V; Briggs, G Andrew D; Mol, Jan A

2017-11-08

Although it was demonstrated that discrete molecular levels determine the sign and magnitude of the thermoelectric effect in single-molecule junctions, full electrostatic control of these levels has not been achieved to date. Here, we show that graphene nanogaps combined with gold microheaters serve as a testbed for studying single-molecule thermoelectricity. Reduced screening of the gate electric field compared to conventional metal electrodes allows control of the position of the dominant transport orbital by hundreds of meV. We find that the power factor of graphene-fullerene junctions can be tuned over several orders of magnitude to a value close to the theoretical limit of an isolated Breit-Wigner resonance. Furthermore, our data suggest that the power factor of an isolated level is only given by the tunnel coupling to the leads and temperature. These results open up new avenues for exploring thermoelectricity and charge transport in individual molecules and highlight the importance of level alignment and coupling to the electrodes for optimum energy conversion in organic thermoelectric materials.

Thermoelectric Properties of Complex Zintl Phases

NASA Astrophysics Data System (ADS)

Snyder, G. Jeffrey

2008-03-01

Complex Zintl phases make ideal thermoelectric materials because they can exhibit the necessary ``electron-crystal, phonon-glass'' properties required for high thermoelectric efficiency. Complex crystal structures can lead to high thermoelectric figure of merit (zT) by having extraordinarily low lattice thermal conductivity. A recent example is the discovery that Yb14MnSb11, a complex Zintl compound, has twice the zT as the SiGe based material currently in use at NASA. The high temperature (300K - 1300K) electronic properties of Yb14MnSb11 can be understood using models for heavily doped semiconductors. The free hole concentration, confirmed by Hall effect measurements, is set by the electron counting rules of Zintl and the valence of the transition metal (Mn^+2). Substitution of nonmagnetic Zn^+2 for the magnetic Mn^+2 reduces the spin-disorder scattering and leads to increased zT (10%). The reduction of spin-disorder scattering is consistent with the picture of Yb14MnSb11 as an underscreened Kondo lattice as derived from low temperature measurements. The hole concentration can be reduced by the substitution of Al^+3 for Mn^+2, which leads to an increase in the Seebeck coefficient and electrical resistivity consistent with models for degenerate semiconductors. This leads to further improvements (about 25%) in zT and a reduction in the temperature where the zT peaks. The peak in zT is due to the onset of minority carrier conduction and can be correlated with reduction in Seebeck coefficient, increase in electrical conductivity and increase in thermal conductivity due to bipolar thermal conduction.

Further improvements in program to calculate electronic properties of narrow band gap materials

NASA Technical Reports Server (NTRS)

Patterson, James D.

1992-01-01

The tasks that we have accomplished are discussed. An extra task was a calculation comparing electron mobilities in Mercury Manganese Telluride with Mercury Cadmium Telluride given in 1H. We then list the reports and papers produced and follow that with either abstracts or the papers themselves. In one key paper we obtain good results between experiment and theory in Mercury Zinc Telluride and also find it typically has mobilities competitive with Mercury Cadmium Telluride. In the Appendix we have a relatively complete set of references.

Enhancing Thermoelectric Performance Using Nonlinear Transport Effects

NASA Astrophysics Data System (ADS)

Jiang, Jian-Hua; Imry, Yoseph

2017-06-01

We study nonlinear transport effects on the maximum efficiency and power for both inelastic and elastic thermoelectric generators. The former device refers to phonon-assisted hopping in double quantum dots, while the latter device is represented by elastic tunneling through a single quantum dot. We find that nonlinear thermoelectric transport can lead to enhanced efficiency and power for both types of devices. A comprehensive survey of various quantum-dot energy, temperature, and parasitic heat conduction reveals that the nonlinear transport-induced improvements of the maximum efficiency and power are overall much more significant for inelastic devices than for elastic devices, even for temperature biases as small as Th=1.2 Tc (Th and Tc are the temperatures of the hot and cold reservoirs, respectively). The underlying mechanism is revealed as due to the fact that, unlike the Fermi distribution, the Bose distribution is not bounded when the temperature bias increases. A large flux density of absorbed phonons leads to a great enhancement of the electrical current, output power, and energy efficiency, dominating over the concurrent increase of the parasitic heat current. Our study reveals that nonlinear transport effects can be a useful tool for improving thermoelectric performance.

Polymorphic one-dimensional (N2H4)2ZnTe: soluble precursors for the formation of hexagonal or cubic zinc telluride.

PubMed

Mitzi, David B

2005-10-03

Two hydrazine zinc(II) telluride polymorphs, (N2H4)2ZnTe, have been isolated, using ambient-temperature solution-based techniques, and the crystal structures determined: alpha-(N2H4)2ZnTe (1) [P21, a = 7.2157(4) Angstroms, b = 11.5439(6) Angstroms, c = 7.3909(4) Angstroms, beta = 101.296(1) degrees, Z = 4] and beta-(N2H4)2ZnTe (2) [Pn, a = 8.1301(5) Angstroms, b = 6.9580(5) Angstroms, c = 10.7380(7) Angstroms, beta = 91.703(1) degrees, Z = 4]. The zinc atoms in 1 and 2 are tetrahedrally bonded to two terminal hydrazine molecules and two bridging tellurium atoms, leading to the formation of extended one-dimensional (1-D) zinc telluride chains, with different chain conformations and packings distinguishing the two polymorphs. Thermal decomposition of (N2H4)2ZnTe first yields crystalline wurtzite (hexagonal) ZnTe at temperatures as low as 200 degrees C, followed by the more stable zinc blende (cubic) form at temperatures above 350 degrees C. The 1-D polymorphs are soluble in hydrazine and can be used as convenient precursors for the low-temperature solution processing of p-type ZnTe semiconducting films.

Development of Thermoelectric and Permanent Magnet Nanoparticles for Clean Energy Applications

NASA Astrophysics Data System (ADS)

Nguyen, Phi-Khanh

The global trend towards energy efficiency and environmental sustainability has generated a strong demand for clean energy technologies. Among the many energy solutions, the work in this dissertation contributes to two strategic goals: the reduction of fuel consumption in the transportation sector, and the increase of domestic wind power capacity. The key barriers to achieving these goals are materials challenges. Automobiles can be made more efficient by thermoelectric conversion of waste heat from the engine into electricity that can be used to power electrical components in the vehicle. Vehicles can forego petroleum fuel altogether by using electric or hybrid motors. Unfortunately, the conversion efficiency of current thermoelectric technology is too low to be considered economically feasible, and the permanent magnets used in electric vehicle motors and wind turbine generators require critical rare-earth elements that are economically unstable (often referred to as the "rare-earth crisis"). In order to combat these challenges, a "spark erosion" technique was utilized for producing nanoparticles that improve thermoelectric efficiency and contribute to the development of electromotors that do not require rare-earths. In Chapter 2 of this dissertation, I describe the utilization of spark erosion for producing high-quality thermoelectric nanoparticles at a remarkably high rate and with enhanced thermoelectric properties. The technique was employed to synthesize p-type bismuth-antimony telluride (BST) and n-type skutterudite nanoparticles, using a relatively small laboratory apparatus, with low energy consumption. The compacted BST nanocomposite samples made from these nanoparticles exhibit a well-defined, 20--50 nm size nanograin microstructure, and show an enhanced Figure of merit, ZT, of 1.36 at 360 K due to a reduction in lattice thermal conductivity. The skutterudite nanocomposites also show reduced thermal conductivity but still require enhancement in the thermoelectric power factor. Such a technique is essential for providing inexpensive, oxidation-free nanoparticles required for fabricating high performance thermoelectric devices for power generation from waste heat, and for refrigeration. We have investigated the spark erosion of MnBi, a promising rare-earth-free permanent magnet, and have determined that spark erosion provides the best approach for producing MnBi particles. The low-temperature phase of MnBi (LTP-MnBi) is an attractive rare-earth free permanent magnet material due it its high uniaxial magnetocrystalline anisotropy, which produces an unusually high coercivity at the elevated temperatures required for motor and generators. However, due to the peritectic Mn-Bi phase diagram and the slow interdiffusion of Mn and Bi below the 350°C phase change temperature, bulk samples of LTP-MnBi with high saturation magnetization (MS) have been difficult to achieve. In Chapter 3, we describe the successful formation of high-purity bulk LTP-MnBi ingots and spark erosion of this material to produce single-domain particles of MnBi at an unprecedented rate. The bulk ingots have MS > 90 wt % of LTP-MnBi, and are formed by chill-casting and by vacuum-annealing of arc-melted ingots. The as-prepared powder then consists of amorphous, crystalline, and superparamagnetic particles, mostly as porous aggregates. The major fraction of the powder consists of 20--30 nm particles. A short anneal crystallizes the amorphous particles producing a high moment, albeit with HC of only a few kOe. If lightly milled, the agglomerates are broken up and yield an HC of 1 T and a maximum energy product of 3.0 MGOe. The particles can be further engineered through milling, annealing, and/or solution processing in order to produce unique properties that hold promise to achieving the first bulk permanent magnet that utilizes the exchange-spring principle. In addition, we have found that due to the amorphous component of the spark-eroded powder, a cold compact can be magnetically oriented by crystallizing in a magnetic field. This crystallographic alignment is necessary for further improvement of the magnet energy density.

Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method

NASA Astrophysics Data System (ADS)

Lee, Heon-Bok; Yang, Hyun Jeong; We, Ju Hyung; Kim, Kukjoo; Choi, Kyung Cheol; Cho, Byung Jin

2011-05-01

A new process for fabricating a low-cost thermoelectric module using a screen-printing method has been developed. Thermoelectric properties of screen-printed ZnSb films were investigated in an effort to develop a thermoelectric module with low cost per watt. The screen-printed Zn x Sb1- x films showed a low carrier concentration and high Seebeck coefficient when x was in the range of 0.5 to 0.57 and the annealing temperature was kept below 550°C. When the annealing temperature was higher than 550°C, the carrier concentration of the Zn x Sb1- x films reached that of a metal, leading to a decrease of the Seebeck coefficient. In the present experiment, the optimized carrier concentration of screen-printed ZnSb was 7 × 1018/cm3. The output voltage and power density of the ZnSb film were 10 mV and 0.17 mW/cm2, respectively, at Δ T = 50 K. A thermoelectric module was produced using the proposed screen-printing approach with ZnSb and CoSb3 as p-type and n-type thermoelectric materials, respectively, and copper as the pad metal.

Promising Thermoelectric Bulk Materials with 2D Structures.

PubMed

Zhou, Yiming; Zhao, Li-Dong

2017-12-01

Given that more than two thirds of all energy is lost, mostly as waste heat, in utilization processes worldwide, thermoelectric materials, which can directly convert waste heat to electricity, provide an alternative option for optimizing energy utilization processes. After the prediction that superlattices may show high thermoelectric performance, various methods based on quantum effects and superlattice theory have been adopted to analyze bulk materials, leading to the rapid development of thermoelectric materials. Bulk materials with two-dimensional (2D) structures show outstanding properties, and their high performance originates from both their low thermal conductivity and high Seebeck coefficient due to their strong anisotropic features. Here, the advantages of superlattices for enhancing the thermoelectric performance, the transport mechanism in bulk materials with 2D structures, and optimization methods are discussed. The phenomenological transport mechanism in these materials indicates that thermal conductivities are reduced in 2D materials with intrinsically short mean free paths. Recent progress in the transport mechanisms of Bi 2 Te 3 -, SnSe-, and BiCuSeO-based systems is summarized. Finally, possible research directions to enhance the thermoelectric performance of bulk materials with 2D structures are briefly considered. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Possible Regenerative, Molten-Salt, Thermoelectric Fuel Cell

NASA Technical Reports Server (NTRS)

Greenberg, Jacob; Thaller, Lawrence H.; Weber, Donald E.

1964-01-01

Molten or fused salts have been evaluated as possible thermoelectric materials because of the relatively good values of their figures of merit, their chemical stability, their long liquid range, and their ability to operate in conjunction with a nuclear reactor to produce heat. In general, molten salts are electrolytic conductors; therefore, there will be a transport of materials and subsequent decomposition with the passage of an electric current. It is possible nonetheless to overcome this disadvantage by using the decomposition products of the molten-salt electrolyte in a fuel cell. The combination of a thermoelectric converter and a fuel cell would lead to a regenerative system that may be useful.

Electronic structure, transport, and phonons of SrAg ChF ( Ch = S,Se,Te): Bulk superlattice thermoelectrics

DOE PAGES

Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.; ...

2015-07-15

Here, we report calculations of the electronic structure, vibrational properties, and transport for the p-type semiconductors, SrAg ChF ( Ch = S, Se, and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 cm –1, indicative of a material with low thermal conductivity. The bands at and near the valence-band maxima are highly two-dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.

Cadmium Telluride-Titanium Dioxide Nanocomposite for Photodegradation of Organic Substance.

PubMed

Ontam, Areeporn; Khaorapapong, Nithima; Ogawa, Makoto

2015-12-01

Cadmium telluride-titanium dioxide nanocomposite was prepared by hydrothermal reaction of sol-gel derived titanium dioxide and organically modified cadmium telluride. The crystallinity of titanium dioxide in the nanocomposite was higher than that of pure titanium dioxide obtained by the reaction under the same temperature and pressure conditions, showing that cadmium telluride induced the crystallization of titanium dioxide. Diffuse reflectance spectrum of the nanocomposite showed the higher absorption efficiency in the UV-visible region due to band-gap excitation of titanium dioxide. The nanocomposite significantly showed the improvement of photocatalytic activity for 4-chlorophenol with UV light.

Effect of rare-earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride hafnium pentatelluride

NASA Astrophysics Data System (ADS)

Lowhorn, Nathan Dane

The transition metal pentatellurides HfTe5 and ZrTe5 have been observed to possess interesting electrical transport properties. High thermopower and low resistivity values result in high thermoelectric power factors. In addition, they possess anomalous transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe5 and 145 K for ZrTe5. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. This behavior has been found to be extremely sensitive to changes in the energetics of the system through influences such as magnetic field, stress, pressure, microwave radiation, and substitutional doping. This behavior has yet to be fully explained. Previous doping studies have shown profound and varied effects on the anomalous transport behavior. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe5 with rare-earth elements. We have grown single crystals of nominal Hf0.75RE 0.25Te5 where RE = Ce, Pr, Nd, Sm, Gd, Tb, Dy, and Ho. Electrical resistivity and thermopower data from about 10 K to room temperature are presented and discussed in terms of the thermoelectric properties. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over that of previously studied pentatellurides and the commonly used thermoelectric material Bi2Te3. For nominal Hf0.75Nd0.25Te5 and Hf0.75 Sm0.25Te5, values more than a factor of 2 larger than that Bi2Te3 are observed. In addition, suppression of the anomalous transport behavior leads to a suppression of the large magnetoresistive effect observed in the parent compounds. Rare-earth doping of HfTe5 has a profound impact on the anomalous electrical transport properties of the parent pentatellurides and produces enhanced thermoelectric properties.

Self-Protective Measures to Enhance Airlift Operations in Hostile Environments

DTIC Science & Technology

1989-09-01

developed theater may be so disorganized that category 2 threats may be less precisely defined and maybe found throughout the area. It is ironic that in...microns, a heat-seeker 80 TABLE 13 Infrared Sensitive Photoconductors 52 Photoconductor Wavelength Sensitivity Lead Sulfide , -60°F 1 to 3.5 microns Lead... Sulfide , Room Temperature 1 to 2.8 microns Telluride, -320°F i to 5 microns Indium Antimonide, -320°F 1 to 6 microns Germanium, Doped, Room

Long-term leaching of photovoltaic modules

NASA Astrophysics Data System (ADS)

Nover, Jessica; Zapf-Gottwick, Renate; Feifel, Carolin; Koch, Michael; Metzger, Jörg W.; Werner, Jürgen H.

2017-08-01

Some photovoltaic module technologies use toxic materials. We report long-term leaching on photovoltaic module pieces of 5 × 5 cm2 size. The pieces are cut out from modules of the four major commercial photovoltaic technologies: crystalline and amorphous silicon, cadmium telluride as well as from copper indium gallium diselenide. To simulate different environmental conditions, leaching occurs at room temperature in three different water-based solutions with pH 3, 7, and 11. No agitation is performed to simulate more representative field conditions. After 360 days, about 1.4% of lead from crystalline silicon module pieces and 62% of cadmium from cadmium telluride module pieces are leached out in acidic solutions. The leaching depends heavily on the pH and the redox potential of the aqueous solutions and it increases with time. The leaching behavior is predictable by thermodynamic stability considerations. These predictions are in good agreement with the experimental results.

Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb 1-xSn xTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan

2015-12-09

The electronic structure of Pb 1–xSn xTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb 1–xSn xTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap canmore » be tuned by the alloy composition. In conclusion, there is a range of potential usage of Pb 1–xSn xTe for spintronic applications.« less

Nano-materials enabled thermoelectricity from window glasses.

PubMed

Inayat, Salman B; Rader, Kelly R; Hussain, Muhammad M

2012-01-01

With a projection of nearly doubling up the world population by 2050, we need wide variety of renewable and clean energy sources to meet the increased energy demand. Solar energy is considered as the leading promising alternate energy source with the pertinent challenge of off sunshine period and uneven worldwide distribution of usable sun light. Although thermoelectricity is considered as a reasonable renewable energy from wasted heat, its mass scale usage is yet to be developed. Here we show, large scale integration of nano-manufactured pellets of thermoelectric nano-materials, embedded into window glasses to generate thermoelectricity using the temperature difference between hot outside and cool inside. For the first time, this work offers an opportunity to potentially generate 304 watts of usable power from 9 m(2) window at a 20°C temperature gradient. If a natural temperature gradient exists, this can serve as a sustainable energy source for green building technology.

A Review of SnSe: Growth and Thermoelectric Properties

NASA Astrophysics Data System (ADS)

Nguyen, Van Quang; Kim, Jungdae; Cho, Sunglae

2018-04-01

SnSe is a 2D semiconductor with an indirect energy gap of 0.86 - 1 eV; it is widely used in solar cell, optoelectronics, and electronic device applications. Recently, SnSe has been considered as a robust candidate for energy conversion applications due to its high thermoelectric performance ( ZT = 2.6 in p-type and 2.2 in n-type), which is assigned mainly to its anhamornic bonding leading to an ultralow thermal conductivity. In this review, we first discuss the crystalline and electronic structures of SnSe and the source of its p-type characteristic. Then, some typical single crystal and polycrystal growth techniques, as well as an epitaxial thin film growth technique, are outlined. The reported thermoelectric properties of SnSe grown by using each technique are also reviewed. Finally, we will describe some remaining issues concerning the use of SnSe for thermoelectric applications.

Thermoelectric properties of Bi 2Sr 2Co 2O y thin films and single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diao, Zhenyu; Lee, Ho Nyung; Chisholm, Matthew F.

Bi 2Sr 2Co 2O 9 exhibits a misfit-layered structure with good thermoelectric properties. We have investigated the thermoelectric properties of Bi 2Sr 2Co 2O y in both thin-film and single-crystal forms. Among thin films grown at different temperatures, we find that both the in-plane thermoelectric power (Sab) and electrical resistivity (ρab) vary in an opposite trend, i.e., Sab is high when ρab is small. This results in large power factor (S ab 2/ρab~5.5 μW/K 2 cm for the film grown at 700 °C), comparable to that for whiskers. For single crystals, the electrical resistivity shows metallic behavior in a largemore » temperature range, but has higher magnitude than that of films grown at 675 °C and 700 °C. The annealing of single crystals under Ar atmosphere leads to even higher resistivity while S ab is improved. Lastly, we discuss the thermoelectric performance of this material considering both oxygen concentration and phase purity.« less

Thermoelectric properties of Bi 2Sr 2Co 2O y thin films and single crystals

DOE PAGES

Diao, Zhenyu; Lee, Ho Nyung; Chisholm, Matthew F.; ...

2017-02-02

Bi 2Sr 2Co 2O 9 exhibits a misfit-layered structure with good thermoelectric properties. We have investigated the thermoelectric properties of Bi 2Sr 2Co 2O y in both thin-film and single-crystal forms. Among thin films grown at different temperatures, we find that both the in-plane thermoelectric power (Sab) and electrical resistivity (ρab) vary in an opposite trend, i.e., Sab is high when ρab is small. This results in large power factor (S ab 2/ρab~5.5 μW/K 2 cm for the film grown at 700 °C), comparable to that for whiskers. For single crystals, the electrical resistivity shows metallic behavior in a largemore » temperature range, but has higher magnitude than that of films grown at 675 °C and 700 °C. The annealing of single crystals under Ar atmosphere leads to even higher resistivity while S ab is improved. Lastly, we discuss the thermoelectric performance of this material considering both oxygen concentration and phase purity.« less

Electronic and Thermoelectric Properties of Ternary Chalcohalide Semiconductors: First Principles Study

NASA Astrophysics Data System (ADS)

Khan, Wilayat; Hussain, Sajjad; Minar, Jan; Azam, Sikander

2018-02-01

Ternary chalcohalides have been widely utilized for different device applications. The thermoelectric properties of SbSI, SbSeI and SbSBr have been investigated by theoretical simulations, and the findings have been performed using BoltzTraP code, based on semi-classical Boltzmann transport theory. In this study, we simulated the electronic structures using the Englo-Vosko generalized gradient approximation employed in the WIEN2k program. From the electronic band structures, we found a combination of light and heavy bands around the Fermi level in the valence band, which strongly affect the effective masses of the carriers. The entire thermoelectric parameters, like the electrical, the electronic part of the thermal conductivities, the Seebeck coefficient and the power factor have been analysed as functions of temperature and chemical potential. The correlation between the effective masses and the thermoelectric properties is also included in the discussion because the effective mass reveals the mobility of the carriers which in turn affect the thermoelectric properties. The substitution of sulfur reveals high electrical conductivity and a smaller Seebeck coefficient based on effective mass leads to the increase in the power factor.

Facile Preparation of Highly Conductive Metal Oxides by Self-Combustion for Solution-Processed Thermoelectric Generators.

PubMed

Kang, Young Hun; Jang, Kwang-Suk; Lee, Changjin; Cho, Song Yun

2016-03-02

Highly conductive indium zinc oxide (IZO) thin films were successfully fabricated via a self-combustion reaction for application in solution-processed thermoelectric devices. Self-combustion efficiently facilitates the conversion of soluble precursors into metal oxides by lowering the required annealing temperature of oxide films, which leads to considerable enhancement of the electrical conductivity of IZO thin films. Such enhanced electrical conductivity induced by exothermic heat from a combustion reaction consequently yields high performance IZO thermoelectric films. In addition, the effect of the composition ratio of In to Zn precursors on the electrical and thermoelectric properties of the IZO thin films was investigated. IZO thin films with a composition ratio of In:Zn = 6:2 at the low annealing temperature of 350 °C showed an enhanced electrical conductivity, Seebeck coefficient, and power factor of 327 S cm(-1), 50.6 μV K(-1), and 83.8 μW m(-1) K(-2), respectively. Moreover, the IZO thin film prepared at an even lower temperature of 300 °C retained a large power factor of 78.7 μW m(-1) K(-2) with an electrical conductivity of 168 S cm(-1). Using the combustive IZO precursor, a thermoelectric generator consisting of 15 legs was fabricated by a printing process. The thermoelectric array generated a thermoelectric voltage of 4.95 mV at a low temperature difference (5 °C). We suggest that the highly conductive IZO thin films by self-combustion may be utilized for fabricating n-type flexible printed thermoelectric devices.

Cadmium Telluride Solar Cells | Photovoltaic Research | NREL

Science.gov Websites

Cadmium Telluride Solar Cells Cadmium Telluride Solar Cells Photovoltaic (PV) solar cells based on leadership. The United States is the leader in CdTe PV manufacturing, and NREL has been at the forefront of research and development (R&D) in this area. PV Research Other Materials & Devices pages: High

Impact of parasitic thermal effects on thermoelectric property measurements by Harman method.

PubMed

Kwon, Beomjin; Baek, Seung-Hyub; Kim, Seong Keun; Kim, Jin-Sang

2014-04-01

Harman method is a rapid and simple technique to measure thermoelectric properties. However, its validity has been often questioned due to the over-simplified assumptions that this method relies on. Here, we quantitatively investigate the influence of the previously ignored parasitic thermal effects on the Harman method and develop a method to determine an intrinsic ZT. We expand the original Harman relation with three extra terms: heat losses via both the lead wires and radiation, and Joule heating within the sample. Based on the expanded Harman relation, we use differential measurement of the sample geometry to measure the intrinsic ZT. To separately evaluate the parasitic terms, the measured ZTs with systematically varied sample geometries and the lead wire types are fitted to the expanded relation. A huge discrepancy (∼28%) of the measured ZTs depending on the measurement configuration is observed. We are able to separately evaluate those parasitic terms. This work will help to evaluate the intrinsic thermoelectric property with Harman method by eliminating ambiguities coming from extrinsic effects.

Band Degeneracy, Low Thermal Conductivity, and High Thermoelectric Figure of Merit in SnTe-CaTe Alloys

NASA Astrophysics Data System (ADS)

Al Rahal Al Orabi, R.; Mecholsky, N.; Hwang, J. P.; Kim, W.; Rhyee, J. S.; Wee, D.; Fornari, M.

Pure lead-free SnTe has limited thermoelectric potentials because of the low Seebeck coeffcients and the relatively large thermal conductivity. In this study, we provide experimental evidence and theoretical understanding that alloying SnTe with Ca greatly improves the transport properties leading to ZT of 1.35 at 873 K, the highest ZT value so far reported for singly doped SnTe materials. The introduction of Ca (0-9%) in SnTe induces multiple effects: (1) Ca replaces Sn and reduces the hole concentration due to Sn vacancies, (2) the energy gap increases limiting the bipolar transport, (3) several bands with larger effective masses become active in transport, and (4) the lattice thermal conductivity is reduced of about 70% due to the contribution of concomitant scattering terms associated with the alloy disorder and the presence of nanoscale precipitates. An effciency of 10% (for ΔT = 400 K) was predicted for high temperature thermoelectric power generation using SnTe-based n- and p-type materials.

Synergetic effect of Zn substitution on the electron and phonon transport in Mg2Si0.5Sn0.5-based thermoelectric materials.

PubMed

Gao, Hongli; Zhu, Tiejun; Zhao, Xinbing; Deng, Yuan

2014-10-07

Mg2Si1-xSnx alloys are a prospective material for thermoelectric generators at moderate temperatures. The thermoelectric properties of Mg2Si0.5Sn0.5-based thermoelectric materials with only Zn substitution or Zn/Sb co-doping were investigated. Isoelectronic Zn substitution did not affect the carrier concentration, but improved the carrier mobility. Zn atoms incorporated into a Sb-doped Mg2Si0.5Sn0.5 matrix simultaneously boosted the power factor and suppressed the lattice thermal conductivity, leading to an enhancement of the thermoelectric figure of merit ZT of the resulting bulk materials. The interplay between the electron and phonon transport of Mg2Si0.5Sn0.49Sb0.01 substituted with Zn at Mg sites results in an enhancement of the ZT by 25% at ∼730 K, from ZT≈ 0.8 in Mg2Si0.5Sn0.49Sb0.01 to ZT≈ 1.0 in Mg1.98Zn0.02Si0.5Sn0.49Sb0.01. Solid solutions in the Mg2Si-Mg2Sn system appear to be more promising for thermoelectric applications.

Structural and electronic properties of high pressure phases of lead chalcogenides

NASA Astrophysics Data System (ADS)

Petersen, John; Scolfaro, Luisa; Myers, Thomas

2012-10-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity. Variation in synthesis conditions gives rise to a need for analysis of structural and thermoelectric properties of these materials at different pressures. In addition to the NaCl structure at ambient conditions, lead chalcogenides have a dynamic orthorhombic (Pnma) intermediate phase and a higher pressure yet stable CsCl phase. By altering the lattice constant, we simulate the application of external pressure; this has notable effects on ground state total energy, band gap, and structural phase. Using the General Gradient Approximation (GGA) in Density Functional Theory (DFT), we calculate the phase transition pressures by finding the differences in enthalpy from total energy calculations. For each phase, elastic constants, bulk modulus, shear modulus, Young's modulus, and hardness are calculated, using two different approaches. In addition to structural properties, we analyze the band structure and density of states at varying pressures, paying special note to thermoelectric implications.

Nonlocal thermoelectric effects and nonlocal Onsager relations in a three-terminal proximity-coupled superconductor-ferromagnet device.

PubMed

Machon, P; Eschrig, M; Belzig, W

2013-01-25

We study thermal and charge transport in a three-terminal setup consisting of one superconducting and two ferromagnetic contacts. We predict that the simultaneous presence of spin filtering and of spin-dependent scattering phase shifts at each of the two interfaces will lead to very large nonlocal thermoelectric effects both in clean and in disordered systems. The symmetries of thermal and electric transport coefficients are related to fundamental thermodynamic principles by the Onsager reciprocity. Our results show that a nonlocal version of the Onsager relations for thermoelectric currents holds in a three-terminal quantum coherent ferromagnet-superconductor heterostructure including a spin-dependent crossed Andreev reflection and coherent electron transfer processes.

Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe

NASA Technical Reports Server (NTRS)

Fripp, Archibald L.; Debnam, William J.; Rosch, William R.; Baker, N. R.; Narayanan, R.

1999-01-01

The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USMP-3) and on USMP-4 Space Shuttle flights in February, 1996, and November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. Lead tin telluride is an alloy of PbTe and SnTe. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (>6 micron) infrared detectors and lasers. Observations and experimental methods of crystal growth of PbSnTe on both Space Shuttle Flights are presented.

TOPICAL REVIEW: Physics of thermoelectric cooling

NASA Astrophysics Data System (ADS)

Gurevich, Yu G.; Logvinov, G. N.

2005-12-01

A new approach is suggested to explain the Peltier effect. It assumes that the Peltier effect is not an isothermal effect. The approach is based on the occurrences of induced thermal fluxes in a structure which consists of two conducting media, through which a dc electric current flows. These induced thermal diffusion fluxes arise to compensate for the change in the thermal flux caused by the electric current (the drift thermal flux) flowing through the junction, in accordance with the general Le Châtelier-Braun principle. The occurrence of these thermal diffusion fluxes leads to temperature heterogeneity in the structure and, as a result, to a cooling or heating of the junction. Within the framework of this concept, the thermoelectric cooling is analysed. It is shown that in the general case the Peltier effect always occurs together with another thermoelectric effect. This thermoelectric effect is predicted for the first time, and we have called it the barrierless thermoelectric effect. Both these effects essentially depend on the junction surface thermal resistance. The Peltier effect disappears in the limiting case of a very large surface thermal resistance, while the barrierless effect disappears in the limiting case of a very small surface thermal resistance. The dependence of thermoelectric cooling on the geometrical dimensions of the structure is noted, and the corresponding interpretation of this fact is discussed. It is shown that the thermoelectric cooling (heating) is a thermodynamically reversible process in the linear approximation of the electric current applied.

Thermoelectric applications as related to biomedical engineering for NASA Johnson Space Center

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kramer, C.D.

1997-07-01

This paper presents current NASA biomedical developments and applications using thermoelectrics. Discussion will include future technology enhancements that would be most beneficial to the application of thermoelectric technology. A great deal of thermoelectric applications have focused on electronic cooling. As with all technological developments within NASA, if the application cannot be related to the average consumer, the technology will not be mass-produced and widely available to the public (a key to research and development expenditures and thermoelectric companies). Included are discussions of thermoelectric applications to cool astronauts during launch and reentry. The earth-based applications, or spin-offs, include such innovations asmore » tank and race car driver cooling, to cooling infants with high temperatures, as well as, the prevention of hair loss during chemotherapy. In order to preserve the scientific value of metabolic samples during long-term space missions, cooling is required to enable scientific studies. Results of one such study should provide a better understanding of osteoporosis and may lead to a possible cure for the disease. In the space environment, noise has to be kept to a minimum. In long-term space applications such as the International Space Station, thermoelectric technology provides the acoustic relief and the reliability for food, as well as, scientific refrigeration/freezers. Applications and future needs are discussed as NASA moves closer to a continued space presence in Mir, International Space Station, and Lunar-Mars Exploration.« less

Ultrasonication of Bismuth Telluride Nanocrystals Fabricated by Solvothermal Method

NASA Technical Reports Server (NTRS)

Chu, Sang-Hyon; Choi, Sang H.; Kim, Jae-Woo; King, Glen C.; Elliott, James R.

2006-01-01

The objective of this study is to evaluate the effect of ultrasonication on bismuth telluride nanocrystals prepared by solvothermal method. In this study, a low dimensional nanocrystal of bismuth telluride (Bi2Te3) was synthesized by a solvothermal process in an autoclave at 180 C and 200 psi. During the solvothermal reaction, organic surfactants effectively prevented unwanted aggregation of nanocrystals in a selected solvent while controlling the shape of the nanocrystal. The atomic ratio of bismuth and tellurium was determined by energy dispersive spectroscopy (EDS). The cavitational energy created by the ultrasonic probe was varied by the ultrasonication process time, while power amplitude remained constant. The nanocrystal size and its size distribution were measured by field emission scanning electron microscopy (FESEM) and a dynamic light scattering system. When the ultrasonication time increased, the average size of bismuth telluride nanocrystal gradually increased due to the direct collision of nanocrystals. The polydispersity of the nanocrystals showed a minimum when the ultrasonication was applied for 5 min. Keywords: bismuth telluride, nanocrystal, low-dimensional, ultrasonication, solvothermal

Defense Industrial Base Assessment: U.S. Imaging and Sensors Industry

DTIC Science & Technology

2006-10-01

uncooled devices, but provide much higher resolution. The semiconductor material used in the detector is typically mercury cadmium telluride (HgCdTe...The material principally used in the arrays was mercury cadmium telluride (HgCdTe). Generation 2 detectors significantly improved the signal-to...Silicide (PtSi), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Gallium Arsenide (InGaAs

Thermal Expansion Studies of Selected High Temperature Thermoelectric Materials

NASA Technical Reports Server (NTRS)

Ravi, Vilupanur; Firdosy, Samad; Caillat, Thierry; Brandon, Erik; Van Der Walde, Keith; Maricic, Lina; Sayir, Ali

2008-01-01

Radioisotope thermoelectric generators (RTGs) generate electrical power by converting the heat released from the nuclear decay of radioactive isotopes (typically plutonium-238) into electricity using a thermoelectric converter. RTGs have been successfully used to power a number of space missions and have demonstrated their reliability over an extended period of time (tens of years) and are compact, rugged, radiation resistant, scalable, and produce no noise, vibration or torque during operation. System conversion efficiency for state-of-practice RTGs is about 6% and specific power less than or equal to 5.1 W/kg. Higher specific power would result in more on-board power for the same RTG mass, or less RTG mass for the same on-board power. The Jet Propulsion Laboratory has been leading, under the advanced thermoelectric converter (ATEC) project, the development of new high-temperature thermoelectric materials and components for integration into advanced, more efficient RTGs. Thermoelectric materials investigated to date include skutterudites, the Yb14MnSb11 compound, and SiGe alloys. The development of long-lived thermoelectric couples based on some of these materials has been initiated and is assisted by a thermo-mechanical stress analysis to ensure that all stresses under both fabrication and operation conditions will be within yield limits for those materials. Several physical parameters are needed as input to this analysis. Among those parameters, the coefficient of thermal expansion (CTE) is critically important. Thermal expansion coefficient measurements of several thermoelectric materials under consideration for ATEC are described in this paper. The stress response at the interfaces in material stacks subjected to changes in temperature is discussed, drawing on work from the literature and project-specific tools developed here. The degree of CTE mismatch and the associated effect on the formation of stress is highlighted.

Formation of Semimetallic Cobalt Telluride Nanotube Film via Anion Exchange Tellurization Strategy in Aqueous Solution for Electrocatalytic Applications.

PubMed

Patil, Supriya A; Kim, Eun-Kyung; Shrestha, Nabeen K; Chang, Jinho; Lee, Joong Kee; Han, Sung-Hwan

2015-11-25

Metal telluride nanostructures have demonstrated several potential applications particularly in harvesting and storing green energy. Metal tellurides are synthesized by tellurization process performed basically at high temperature in reducing gas atmosphere, which makes the process expensive and complicated. The development of a facile and economical process for desirable metal telluride nanostructures without complicated manipulation is still a challenge. In an effort to develop an alternative strategy of tellurization, herein we report a thin film formation of self-standing cobalt telluride nanotubes on various conducting and nonconducting substrates using a simple binder-free synthetic strategy based on anion exchange transformation from a thin film of cobalt hydroxycarbonate nanostructures in aqueous solution at room temperature. The nanostructured films before and after ion exchange transformation reaction are characterized using field emission scanning electron microscope, energy dispersive X-ray analyzer, X-ray photoelectron spectroscopy, thin film X-ray diffraction technique, high resolution transmission electron microscope, and selected area electron diffraction analysis technique. After the ion exchange transformation of nanostructures, the film shows conversion from insulator to highly electrical conductive semimetallic characteristic. When used as a counter electrode in I3(-)/I(-) redox electrolyte based dye-sensitized solar cells, the telluride film exhibits an electrocatalytic reduction activity for I3(-) with a demonstration of solar-light to electrical power conversion efficiency of 8.10%, which is highly competitive to the efficiency of 8.20% exhibited by a benchmarked Pt-film counter electrode. On the other hand, the telluride film electrode also demonstrates electrocatalytic activity for oxygen evolution reaction from oxidation of water.

Cryogen-free heterodyne-enhanced mid-infrared Faraday rotation spectrometer

PubMed Central

Wang, Yin; Nikodem, Michal; Wysocki, Gerard

2013-01-01

A new detection method for Faraday rotation spectra of paramagnetic molecular species is presented. Near shot-noise limited performance in the mid-infrared is demonstrated using a heterodyne enhanced Faraday rotation spectroscopy (H-FRS) system without any cryogenic cooling. Theoretical analysis is performed to estimate the ultimate sensitivity to polarization rotation for both heterodyne and conventional FRS. Sensing of nitric oxide (NO) has been performed with an H-FRS system based on thermoelectrically cooled 5.24 μm quantum cascade laser (QCL) and a mercury-cadmium-telluride photodetector. The QCL relative intensity noise that dominates at low frequencies is largely avoided by performing the heterodyne detection in radio frequency range. H-FRS exhibits a total noise level of only 3.7 times the fundamental shot noise. The achieved sensitivity to polarization rotation of 1.8 × 10−8 rad/Hz1/2 is only 5.6 times higher than the ultimate theoretical sensitivity limit estimated for this system. The path- and bandwidth-normalized NO detection limit of 3.1 ppbv-m/Hz1/2 was achieved using the R(17/2) transition of NO at 1906.73 cm−1. PMID:23388967

[A trace methane gas sensor using mid-infrared quantum cascaded laser at 7.5 microm].

PubMed

Chen, Chen; Dang, Jing-Min; Huang, Jian-Qiang; Yang, Yue; Wang, Yi-Ding

2012-11-01

Presented is a compact instrument developed for in situ high-stable and sensitive continuous measurement of trace gases in air, with results shown for ambient methane (CH4) concentration accurate, real-time and in-situ. This instrument takes advantage of recent technology in thermoelectrically cooling (TEC) pulsed Fabry-Perot (FP) quantum cascaded laser (QCL) driving in a pulse mode operating at 7.5 microm ambient temperature to cover a fundamental spectral absorption band near v4 of CH4. A high quality Liquid Nitrogen (LN) cooled Mercury Cadmium Telluride (HgCdTe) mid-infrared (MIR) detector is used along with a total reflection coated gold ellipsoid mirror offering 20 cm single pass optical absorption in an open-path cell to achieve stability of 5.2 x 10(-3) under experimental condition of 200 micromol x mol(-1) measured ambient CH4. The instrument integrated software via time discriminating electronics technology to control QCL provides continuous quantitative trace gas measurements without calibration. The results show that the instrument can be applied to field measurements of gases of environmental concern. Additional, operator could substitute a QCL operating at a different wavelength to measure other gases.

Electrical properties and transport mechanisms of p-znte/n-si heterojunctions

NASA Astrophysics Data System (ADS)

Seyam, M. A. M.; El-Shair, H. T.; Salem, G. F.

2008-03-01

Zinc telluride thin films have been deposited on glass and silicon wafers substrates at room temperature by thermal evaporation technique in a vacuum of 10-5 Torr. The thickness dependence of both the dc electrical resistivity and thermoelectric power of ZnTe were carried out at room temperature and after being annealed over a thickness range from 22 nm to 170 nm. The type of conduction, the carriers concentration and the conduction mechanisms were revealed. The average thermal activation energy Δ E equals to 0.324 eV for the as deposited films and 0.306 eV for annealed films, it is found to correspond with the ionization energy reported for intrinsic defect levels in ZnTe. Seebeck coefficient measurements showed that ZnTe thin films behave as p-type semiconductor and the average value of the free charge carrier concentration is found to be 1.6×1019 cm-3. The built-in voltage, the width of the depletion region, the diode quality factor and the operating conduction mechanisms have been determined from dark current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-ZnTe/ n-Si heterojunctions.

Compatibility of Segments of Thermoelectric Generators

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Ursell, Tristan

2009-01-01

A method of calculating (usually for the purpose of maximizing) the power-conversion efficiency of a segmented thermoelectric generator is based on equations derived from the fundamental equations of thermoelectricity. Because it is directly traceable to first principles, the method provides physical explanations in addition to predictions of phenomena involved in segmentation. In comparison with the finite-element method used heretofore to predict (without being able to explain) the behavior of a segmented thermoelectric generator, this method is much simpler to implement in practice: in particular, the efficiency of a segmented thermoelectric generator can be estimated by evaluating equations using only hand-held calculator with this method. In addition, the method provides for determination of cascading ratios. The concept of cascading is illustrated in the figure and the definition of the cascading ratio is defined in the figure caption. An important aspect of the method is its approach to the issue of compatibility among segments, in combination with introduction of the concept of compatibility within a segment. Prior approaches involved the use of only averaged material properties. Two materials in direct contact could be examined for compatibility with each other, but there was no general framework for analysis of compatibility. The present method establishes such a framework. The mathematical derivation of the method begins with the definition of reduced efficiency of a thermoelectric generator as the ratio between (1) its thermal-to-electric power-conversion efficiency and (2) its Carnot efficiency (the maximum efficiency theoretically attainable, given its hot- and cold-side temperatures). The derivation involves calculation of the reduced efficiency of a model thermoelectric generator for which the hot-side temperature is only infinitesimally greater than the cold-side temperature. The derivation includes consideration of the ratio (u) between the electric current and heat-conduction power and leads to the concept of compatibility factor (s) for a given thermoelectric material, defined as the value of u that maximizes the reduced efficiency of the aforementioned model thermoelectric generator.

Effects of photon field on heat transport through a quantum wire attached to leads

NASA Astrophysics Data System (ADS)

Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar

2018-01-01

We theoretically investigate photo-thermoelectric transport through a quantum wire in a photon cavity coupled to electron reservoirs with different temperatures. Our approach, based on a quantum master equation, allows us to investigate the influence of a quantized photon field on the heat current and thermoelectric transport in the system. We find that the heat current through the quantum wire is influenced by the photon field resulting in a negative heat current in certain cases. The characteristics of the transport are studied by tuning the ratio, ħωγ /kB ΔT, between the photon energy, ħωγ, and the thermal energy, kB ΔT. The thermoelectric transport is enhanced by the cavity photons when kB ΔT > ħωγ. By contrast, if kB ΔT < ħωγ, the photon field is dominant and a suppression in the thermoelectric transport can be found in the case when the cavity-photon field is close to a resonance with the two lowest one-electron states in the system. Our approach points to a new technique to amplify thermoelectric current in nano-devices.

Thermoelectric properties optimization of Fe2VGa by tuning electronic density of states via titanium doping

NASA Astrophysics Data System (ADS)

Wei, Pai-Chun; Huang, Ta-Sung; Lin, Shu-Wei; Guo, Guang-Yu; Chen, Yang-Yuan

2015-10-01

We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe2V1-xTixGa by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe2VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogap to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m-1 K-2 at room temperature, which is comparable to the power factors of Bi2Te3-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe2VGa.

Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

NASA Astrophysics Data System (ADS)

Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

2018-05-01

SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

Low lattice thermal conductivity and good thermoelectric performance of cinnabar

NASA Astrophysics Data System (ADS)

Zhao, Yinchang; Dai, Zhenhong; Lian, Chao; Zeng, Shuming; Li, Geng; Ni, Jun; Meng, Sheng

2017-11-01

Based on the combination of first-principles calculations, Boltzmann transport equation, and electron-phonon interaction (EPI), we investigate the thermal and electronic transport properties of crystalline cinnabar (α -HgS ). The calculated lattice thermal conductivity κL is remarkably low, e.g., 0.60 Wm-1K-1 at 300 K , which is about 30 % of the value for the typical thermoelectric material PbTe. Via taking fully into account the k dependence of the electron relaxation time computed from the EPI matrix, the accurate numerical results of thermopower S , electrical conductivity σ , and electronic thermal conductivity κE are obtained. The calculated power factor S2σ is relatively high while the value of κE is negligible, which, together with the fairly low κL, leads to a good thermoelectric performance in the n -type doped α -HgS , with the figure of merit z T even exceeding 1.4. Our analyses reveal that (i) the large weighted phase space and the quite low phonon group velocity result in the low κL, (ii) the presence of flat band around the Fermi level combined with the large band gap causes the high S , and (iii) the small electron linewidths of the conduction band lead to a large relaxation time and thus a relatively high σ . These results support that α -HgS is a potential candidate for thermoelectric applications.

Extremely high electron mobility in a phonon-glass semimetal

NASA Astrophysics Data System (ADS)

Ishiwata, S.; Shiomi, Y.; Lee, J. S.; Bahramy, M. S.; Suzuki, T.; Uchida, M.; Arita, R.; Taguchi, Y.; Tokura, Y.

2013-06-01

The electron mobility is one of the key parameters that characterize the charge-carrier transport properties of materials, as exemplified by the quantum Hall effect as well as high-efficiency thermoelectric and solar energy conversions. For thermoelectric applications, introduction of chemical disorder is an important strategy for reducing the phonon-mediated thermal conduction, but is usually accompanied by mobility degradation. Here, we show a multilayered semimetal β-CuAgSe overcoming such a trade-off between disorder and mobility. The polycrystalline ingot shows a giant positive magnetoresistance and Shubnikov de Haas oscillations, indicative of a high-mobility small electron pocket derived from the Ag s-electron band. Ni doping, which introduces chemical and lattice disorder, further enhances the electron mobility up to 90,000 cm2 V-1 s-1 at 10 K, leading not only to a larger magnetoresistance but also a better thermoelectric figure of merit. This Ag-based layered semimetal with a glassy lattice is a new type of promising thermoelectric material suitable for chemical engineering.

Contrastive thermoelectric properties of strained SnSe crystals from the first-principles calculations

NASA Astrophysics Data System (ADS)

Tang, Yu; Cheng, Feng; Li, Decong; Deng, Shuping; Chen, Zhong; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Deng, Shukang

2018-06-01

SnSe is a promising thermoelectric material with a record high dimensionless figure of merit ZT at high temperature ∼923 K. However, the ZT values for low-Temperature Pnma phase SnSe are just 0.1-0.9. Here, we use First-principle combine with Boltzmann transport theory methods to study the effect of tensile and compressible strain on the thermoelectric transport properties. The power factor of SnSe with -4% strain have a large boost along b and c directions of 7.7 and 3.9 μW cm-1 K-2, respectively, which are 2.5 and 2 times as large as those pristine SnSe. The charge density distributions reveal that the overlap of wave function has significant change due to the changed bond lengths and bond angles under different strain, which lead to the change of band gap and band dispersion. Our work provides a new effective strategy to enhance the thermoelectric properties of materials.

Effect of impurity resonant states on optical and thermoelectric properties on the surface of a topological insulator.

PubMed

Zhong, Min; Li, Shuai; Duan, Hou-Jian; Hu, Liang-Bin; Yang, Mou; Wang, Rui-Qiang

2017-06-21

We investigate the thermoelectric effect on a topological insulator surface with particular interest in impurity-induced resonant states. To clarify the role of the resonant states, we calculate the dc and ac conductivities and the thermoelectric coefficients along the longitudinal direction within the full Born approximation. It is found that at low temperatures, the impurity resonant state with strong energy de-pendence can lead to a zero-energy peak in the dc conductivity, whose height is sensitively dependent on the strength of scattering potential, and even can reverse the sign of the thermopower, implying the switching from n- to p-type carriers. Also, we exhibit the thermoelectric signatures for the filling process of a magnetic band gap by the resonant state. We further study the impurity effect on the dynamic optical conductivity, and find that the resonant state also generates an optical conductivity peak at the absorption edge for the interband transition. These results provide new perspectives for understanding the doping effect on topological insulator materials.

Thermoelectricity near Anderson localization transitions

NASA Astrophysics Data System (ADS)

Yamamoto, Kaoru; Aharony, Amnon; Entin-Wohlman, Ora; Hatano, Naomichi

2017-10-01

The electronic thermoelectric coefficients are analyzed in the vicinity of one and two Anderson localization thresholds in three dimensions. For a single mobility edge, we correct and extend previous studies and find universal approximants which allow us to deduce the critical exponent for the zero-temperature conductivity from thermoelectric measurements. In particular, we find that at nonzero low temperatures the Seebeck coefficient and the thermoelectric efficiency can be very large on the "insulating" side, for chemical potentials below the (zero-temperature) localization threshold. Corrections to the leading power-law singularity in the zero-temperature conductivity are shown to introduce nonuniversal temperature-dependent corrections to the otherwise universal functions which describe the Seebeck coefficient, the figure of merit, and the Wiedemann-Franz ratio. Next, the thermoelectric coefficients are shown to have interesting dependences on the system size. While the Seebeck coefficient decreases with decreasing size, the figure of merit first decreases but then increases, while the Wiedemann-Franz ratio first increases but then decreases as the size decreases. Small (but finite) samples may thus have larger thermoelectric efficiencies. In the last part we study thermoelectricity in systems with a pair of localization edges, the ubiquitous situation in random systems near the centers of electronic energy bands. As the disorder increases, the two thresholds approach each other, and then the Seebeck coefficient and the figure of merit increase significantly, as expected from the general arguments of Mahan and Sofo [J. D. Mahan and J. O. Sofo, Proc. Natl. Acad. Sci. USA 93, 7436 (1996), 10.1073/pnas.93.15.7436] for a narrow energy range of the zero-temperature metallic behavior.

Near Infrared Quantum Cutting Luminescence of Er3+/Tm3+ Ion Pairs in a Telluride Glass.

PubMed

Chen, Xiaobo; Li, Song; Hu, Lili; Wang, Kezhi; Zhao, Guoying; He, Lizhu; Liu, Jinying; Yu, Chunlei; Tao, Jingfu; Lin, Wei; Yang, Guojian; Salamo, Gregory J

2017-05-16

The multiphoton near-infrared, quantum cutting luminescence in Er 3+ /Tm 3+ co-doped telluride glass was studied. We found that the near-infrared 1800-nm luminescence intensity of (A) Er 3+ (8%)Tm 3+ (0.5%):telluride glass was approximately 4.4 to 19.5 times larger than that of (B) Tm 3+ (0.5%):telluride glass, and approximately 5.0 times larger than that of (C) Er 3+ (0.5%):telluride glass. Additionally, the infrared excitation spectra of the 1800 nm luminescence, as well as the visible excitation spectra of the 522 nm and 652 nm luminescence, of (A) Er 3+ (8%)Tm 3+ (0.5%):telluride glass are very similar to those of Er 3+ ions in (C) Er 3+ (0.5%):telluride glass, with respect to the shapes of their excitation spectral waveforms and peak wavelengths. Moreover, we found that there is a strong spectral overlap and energy transfer between the infrared luminescence of Er 3+ donor ions and the infrared absorption of Tm 3+ acceptor ions. The efficiency of this energy transfer { 4 I 13/2 (Er 3+ ) →  4 I 15/2 (Er 3+ ), 3 H 6 (Tm 3+ ) →  3 F 4 (Tm 3+ )} between the Er 3+ and Tm 3+ ions is approximately 69.8%. Therefore, we can conclude that the observed behaviour is an interesting multiphoton, near-infrared, quantum cutting luminescence phenomenon that occurs in novel Er 3+ -Tm 3+ ion pairs. These findings are significant for the development of next-generation environmentally friendly germanium solar cells, and near-to-mid infrared (1.8-2.0 μm) lasers pumped by GaN light emitting diodes.

Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xiupei, E-mail: xiupeiyang@163.com; College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637000; Lin, Jia

2015-06-15

Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination.more » The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH{sub 3}{sup +} moiety of doxorubicin and the −COO{sup −} moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum.« less

Non-equilibrium processing leads to record high thermoelectric figure of merit in PbTe–SrTe

DOE PAGES

Tan, Gangjian; Shi, Fengyuan; Hao, Shiqiang; ...

2016-07-26

The broad-based implementation of thermoelectric materials in converting heat to electricity hinges on the achievement of high conversion efficiency. Here we demonstrate a thermoelectric figure of merit ZT of 2.5 at 923 K by the cumulative integration of several performance-enhancing concepts in a single material system. Using non-equilibrium processing we show that hole-doped samples of PbTe can be heavily alloyed with SrTe well beyond its thermodynamic solubility limit of <1 mol%. The much higher levels of Sr alloyed into the PbTe matrix widen the bandgap and create convergence of the two valence bands of PbTe, greatly boosting the power factorsmore » with maximal values over 30 μWcm -1 K -2. Exceeding the 5 mol% solubility limit leads to endotaxial SrTe nanostructures which produce extremely low lattice thermal conductivity of 0.5 Wm -1 K -1 but preserve high hole mobilities because of the matrix/precipitate valence band alignment. The best composition is hole-doped PbTe-8% SrTe.« less

Non-equilibrium processing leads to record high thermoelectric figure of merit in PbTe–SrTe

PubMed Central

Tan, Gangjian; Shi, Fengyuan; Hao, Shiqiang; Zhao, Li-Dong; Chi, Hang; Zhang, Xiaomi; Uher, Ctirad; Wolverton, Chris; Dravid, Vinayak P.; Kanatzidis, Mercouri G.

2016-01-01

The broad-based implementation of thermoelectric materials in converting heat to electricity hinges on the achievement of high conversion efficiency. Here we demonstrate a thermoelectric figure of merit ZT of 2.5 at 923 K by the cumulative integration of several performance-enhancing concepts in a single material system. Using non-equilibrium processing we show that hole-doped samples of PbTe can be heavily alloyed with SrTe well beyond its thermodynamic solubility limit of <1 mol%. The much higher levels of Sr alloyed into the PbTe matrix widen the bandgap and create convergence of the two valence bands of PbTe, greatly boosting the power factors with maximal values over 30 μW cm−1 K−2. Exceeding the 5 mol% solubility limit leads to endotaxial SrTe nanostructures which produce extremely low lattice thermal conductivity of 0.5 W m−1 K−1 but preserve high hole mobilities because of the matrix/precipitate valence band alignment. The best composition is hole-doped PbTe–8%SrTe. PMID:27456303

Impact of parasitic thermal effects on thermoelectric property measurements by Harman method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Beomjin, E-mail: bkwon@kist.re.kr; Baek, Seung-Hyub; Keun Kim, Seong

2014-04-15

Harman method is a rapid and simple technique to measure thermoelectric properties. However, its validity has been often questioned due to the over-simplified assumptions that this method relies on. Here, we quantitatively investigate the influence of the previously ignored parasitic thermal effects on the Harman method and develop a method to determine an intrinsic ZT. We expand the original Harman relation with three extra terms: heat losses via both the lead wires and radiation, and Joule heating within the sample. Based on the expanded Harman relation, we use differential measurement of the sample geometry to measure the intrinsic ZT. Tomore » separately evaluate the parasitic terms, the measured ZTs with systematically varied sample geometries and the lead wire types are fitted to the expanded relation. A huge discrepancy (∼28%) of the measured ZTs depending on the measurement configuration is observed. We are able to separately evaluate those parasitic terms. This work will help to evaluate the intrinsic thermoelectric property with Harman method by eliminating ambiguities coming from extrinsic effects.« less

Conflict between internal combustion engine and thermoelectric generator during waste heat recovery in cars

NASA Astrophysics Data System (ADS)

Korzhuev, M. A.

2011-02-01

It is shown that an internal combustion engine and a thermoelectric generator (TEG) arranged on the exhaust pipe of this engine come into the conflict of thermal machines that is related to using the same energy resource. The conflict grows with increasing useful electric power W e of the TEG, which leads to the limitation of both the maximum TEG output power ( W {e/max}) and the possibility of waste heat recovery in cars.

Contribution of thermoelectric and electrochemical effects to spontaneous potential signals induced by water injection into hydrocarbon reservoirs

NASA Astrophysics Data System (ADS)

Gulamali, M. Y.; Saunders, J. H.; Jackson, M.; Pain, C. C.

2009-12-01

Recent work has demonstrated that downhole measurements of streaming potential, using electrodes mounted on the outside of insulated casing, may be used to inform production strategies in oil and gas reservoirs. However, spontaneous potentials due to thermoelectric and/or electrochemical effects may also be present during production and may contribute to the signal measured at the production well. We present a workflow to numerically model spontaneous potentials in the subsurface and ascertain their magnitude in oil reservoirs during production. Our results suggest that the injection of seawater, which typically has a different temperature and salinity to the formation brine, leads to the generation of both thermoelectric and electrochemical potential signals which may be measured at the production well. We observe a peak in the thermoelectric potential before and after the temperature front, with a change in sign occurring close to the midpoint of the front, and the signal decaying with distance from the front. The electrochemical potential has a similar profile, with a change in sign occurring close to the location of the salinity front. In both cases, the absolute magnitude of the signal is related to the overall temperature and/or salinity contrast between the injected fluids and the formation brine, and the magnitude of the thermoelectric or electrochemical coupling coefficient. The lag in the temperature front relative to the saturation front leads to a negligible thermoelectric potential signal at the production well until long after water breakthrough occurs. In contrast, the electrochemical potential contributes significantly to the spontaneous potential measured at the production well before the waterfront arrives, as the salinity front and the saturation front coincide. However, the dependency of the thermoelectric and electrochemical coupling coefficients upon temperature and/or salinity is still uncertain, especially at partial water saturation. We have used the maximum theoretical limit, in the case of the perfect membrane, to estimate these parameters. These results imply that measurements of the spontaneous potential at a production well will combine contributions from both streaming and electrochemical effects, and may be used to detect an advancing waterfront some time before water breakthrough occurs at the well. Moreover, inversion of the measured signals could be used to determine the water saturation in the vicinity of the well, and to regulate flow into the well using control valves in order to maintain or increase oil production.

Vanishing Thermal Conductance of Carbon Nanotube upon Encapsulation by Zigzag Sulfur Chain.

PubMed

Koley, Sayantanu; Sen, Sabyasachi; Chakrabarti, Swapan

2018-06-07

We report an unprecedented enhancement of thermoelectric properties of a single-walled carbon nanotube upon encapsulation of a zigzag sulfur chain inside the nanocore. Our calculations on a 70 Å long [5, 5] carbon nanotube reveal that the encapsulation of zigzag sulfur chain will lead to a 10 7 % increase in the thermoelectric figure of merit and concomitant quenching of thermal conductance by 90%. We have noticed that finite transmission gradient at the Fermi level combined with destructive quantum interference at the sulfur sites and structural conformation-dependent scattering-induced damping of phonon transmission are attributed to the dramatic improvement of thermoelectric behavior of this material. This finding indeed will help circumvent the long-standing problem in the fabrication of carbon-nanotube-based ultrafast device.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

PubMed

Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

2008-01-01

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective

DOE PAGES

Yang, Jiong; Xi, Lili; Qiu, Wujie; ...

2016-02-26

During the last two decades, we have witnessed great progress in research on thermoelectrics. There are two primary focuses. One is the fundamental understanding of electrical and thermal transport, enabled by the interplay of theory and experiment; the other is the substantial enhancement of the performance of various thermoelectric materials, through synergistic optimisation of those intercorrelated transport parameters. In this article, we review some of the successful strategies for tuning electrical and thermal transport. For electrical transport, we start from the classical but still very active strategy of tuning band degeneracy (or band convergence), then discuss the engineering of carriermore » scattering, and finally address the concept of conduction channels and conductive networks that emerge in complex thermoelectric materials. For thermal transport, we summarise the approaches for studying thermal transport based on phonon–phonon interactions valid for conventional solids, as well as some quantitative efforts for nanostructures. We also discuss the thermal transport in complex materials with chemical-bond hierarchy, in which a portion of the atoms (or subunits) are weakly bonded to the rest of the structure, leading to an intrinsic manifestation of part-crystalline part-liquid state at elevated temperatures. In this review, we provide a summary of achievements made in recent studies of thermoelectric transport properties, and demonstrate how they have led to improvements in thermoelectric performance by the integration of modern theory and experiment, and point out some challenges and possible directions.« less

Conjugated-Backbone Effect of Organic Small Molecules for n-Type Thermoelectric Materials with ZT over 0.2.

PubMed

Huang, Dazhen; Yao, Huiying; Cui, Yutao; Zou, Ye; Zhang, Fengjiao; Wang, Chao; Shen, Hongguang; Jin, Wenlong; Zhu, Jia; Diao, Ying; Xu, Wei; Di, Chong-An; Zhu, Daoben

2017-09-20

Conjugated backbones play a fundamental role in determining the electronic properties of organic semiconductors. On the basis of two solution-processable dihydropyrrolo[3,4-c]pyrrole-1,4-diylidenebis(thieno[3,2-b]thiophene) derivatives with aromatic and quinoid structures, we have carried out a systematic study of the relationship between the conjugated-backbone structure and the thermoelectric properties. In particular, a combination of UV-vis-NIR spectra, photoemission spectroscopy, and doping optimization are utilized to probe the interplay between energy levels, chemical doping, and thermoelectric performance. We found that a moderate change in the conjugated backbone leads to varied doping mechanisms and contributes to dramatic changes in the thermoelectric performance. Notably, the chemically doped A-DCV-DPPTT, a small molecule with aromatic structure, exhibits an electrical conductivity of 5.3 S cm -1 and a high power factor (PF 373 K ) up to 236 μW m -1 K -2 , which is 50 times higher than that of Q-DCM-DPPTT with a quinoid structure. More importantly, the low thermal conductivity enables A-DCV-DPPTT to possess a figure of merit (ZT) of 0.23 ± 0.03, which is the highest value reported to date for thermoelectric materials based on organic small molecules. These results demonstrate that the modulation of the conjugated backbone represents a powerful strategy for tuning the electronic structure and mobility of organic semiconductors toward a maximum thermoelectric performance.

Microgravity

NASA Image and Video Library

2004-04-15

A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly.

Two-dimensional metal-organic frameworks with high thermoelectric efficiency through metal ion selection.

PubMed

He, Yuping; Spataru, Catalin D; Léonard, Francois; Jones, Reese E; Foster, Michael E; Allendorf, Mark D; Alec Talin, A

2017-07-26

Two-dimensional (2D) materials have attracted much attention due to their novel properties. An exciting new class of 2D materials based on metal-organic frameworks (MOFs) has recently emerged, displaying high electrical conductivity, a rarity among organic nanoporous materials. The emergence of these materials raises intriguing questions about their fundamental electronic, optical, and thermal properties, but few studies exist in this regard. Here we present an atomistic study of the thermoelectric properties of crystalline 2D MOFs X 3 (HITP) 2 with X = Ni, Pd or Pt, and HITP = 2,3,6,7,10,11-hexaiminotriphenylene, using both ab initio transport models and classical molecular dynamics simulations. We find that these materials have a high Seebeck coefficient and low thermal conductivity, making them promising for thermoelectric applications. Furthermore, we explore the dependence of thermoelectric transport properties on the atomic structure by comparing the calculated band structure, band alignment, and electronic density of states of the three 2D MOFs, and find that the thermoelectric transport properties strongly depend on both the interaction between the ligands and the metal ions, and the d orbital splitting of the metal ions induced by the ligands. This demonstrates that selection of the metal ion is a powerful approach to control and enhance the thermoelectric properties. Interestingly we reveal an unexpected effect where, unlike for electrons, the thermal and electrical current may not be equally carried by the holes, leading to a significant deviation from the Wiedemann-Franz law. The results of this work provide fundamental guidance to optimize the existing 2D MOFs, and to design and discover new families of MOF-like materials for thermoelectric applications.

Thermoelectric properties of the Ca(5)Al(2-x)In(x)Sb(6) solid solution.

PubMed

Zevalkink, Alex; Swallow, Jessica; Ohno, Saneyuki; Aydemir, Umut; Bux, Sabah; Snyder, G Jeffrey

2014-11-14

Zintl phases are attractive for thermoelectric applications due to their complex structures and bonding environments. The Zintl compounds Ca(5)Al(2)In(x)Sb(6)and Ca(5)Al(2)In(x)Sb(6) have both been shown to have promising thermoelectric properties, with zT values of 0.6 and 0.7, respectively, when doped to control the carrier concentration. Alloying can often be used to further improve thermoelectric materials in cases when the decrease in lattice thermal conductivity outweighs reductions to the electronic mobility. Here we present the high temperature thermoelectric properties of the Ca(5)Al(2-x)In(x)Sb(6)solid solution. Undoped and optimally Zn-doped samples were investigated. X-ray diffraction confirms that a full solid solution exists between the Al and In end-members. We find that the Al : In ratio does not greatly influence the carrier concentration or Seebeck effect. The primary effect of alloying is thus increased scattering of both charge carriers and phonons, leading to significantly reduced electronic mobility and lattice thermal conductivity at room temperature. Ultimately, the figure of merit is unaffected by alloying in this system, due to the competing effects of reduced mobility and lattice thermal conductivity.

Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

2017-09-01

In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

DOE PAGES

Wu, D.; Zhao, L. -D.; Tong, X.; ...

2015-05-19

Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe) 1-x(PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM)more » observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.« less

Method and making group IIB metal - telluride films and solar cells

DOEpatents

Basol, Bulent M.; Kapur, Vijay K.

1990-08-21

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers

DOEpatents

Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

2014-12-16

Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

Fifty years of successful MCT research and production in France

NASA Astrophysics Data System (ADS)

Bensussan, Philippe; Tribolet, Philippe; Destéfanis, Gérard; Sirieix, Michel

2009-05-01

France has a long and fruitful history regarding Mercury Cadmium Telluride (MCT) research and production and is still one of the leading countries for the production of MCT IR detectors. To give a historical account of its development and progress, SAGEM Défense Sécurité will describe the early days of MCT developments in France. CEA-Leti (the French Atomic Energy Commission and a leading applied research center in electronics) will then present the research carried out on second- and third-generation MCT technologies, followed by Sofradir who will discuss the production of these new detector types.

Nanowire Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Borshchevsky, Alexander; Fleurial, Jean-Pierre; Herman, Jennifer; Ryan, Margaret

2005-01-01

Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the order of 10-microns wide. The fill factor for the cross-section of a typical bundle is about 1/2. Nanowires have been grown in alumina templates with pore diameters of 100 and 40 nm.

The Effects of Excess Co on the Phase Composition and Thermoelectric Properties of Half-Heusler NbCoSb.

PubMed

Huang, Lihong; Wang, Junchen; Chen, Xi; He, Ran; Shuai, Jing; Zhang, Jianjun; Zhang, Qinyong; Ren, Zhifeng

2018-05-11

NbCoSb with nominal 19 valence electrons, and is supposed to be metallic, has recently been reported to also exhibit the thermoelectric properties of a heavily doped n-type semiconductor. In this study, we prepared Co-rich NbCo 1+ x Sb samples ( x = 0, 0.2, 0.3, 0.4, 0.5), and their phase compositions, microstructures and thermoelectric properties were investigated. The Seebeck coefficient increased a great deal with increasing x , due to decreasing carrier concentration, and the total thermal conductivity reduced mainly because of declining κ e . Finally, a peak thermoelectric figure of merit, ZT , was about 0.46 for NbCo 1.3 Sb at 973 K. This enhancement was mainly attributed to the reduction of electric thermal conductivity and the increase of Seebeck coefficient. The excess Co had effects on the carrier concentration, deformation potential E def and DOS effective mass m * . Adding an excessive amount of Co leads to a very high E def , which was detrimental for transport characteristics.

Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

NASA Astrophysics Data System (ADS)

Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

2016-08-01

Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

NASA Astrophysics Data System (ADS)

Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

2018-06-01

Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

NASA Astrophysics Data System (ADS)

Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

2017-11-01

Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

Silicon-Based Examination of Gamma-Ray and Neutron Interactions with Solid State Materials

DTIC Science & Technology

2018-05-02

The objective of the research was to develop a fundamental understanding of the processes by which charge carriers interact in semiconductor...materials in order to aid in the development of advanced radiation detection materials. During the first three years of the research, our focus was primarily...the contact behavior and affect the charge transport. That information has been applied to single-crystal cadmium-zinc-telluride (CZT) and lead

Performance testing of a vertical Bridgman furnace using experiments and numerical modeling

NASA Astrophysics Data System (ADS)

Rosch, W. R.; Fripp, A. L.; Debnam, W. J.; Pendergrass, T. K.

1997-04-01

This paper details a portion of the work performed in preparation for the growth of lead tin telluride crystals during a Space Shuttle flight. A coordinated effort of experimental measurements and numerical modeling was completed to determine the optimum growth parameters and the performance of the furnace. This work was done using NASA's Advanced Automated Directional Solidification Furnace, but the procedures used should be equally valid for other vertical Bridgman furnaces.

Optical Jitter Effects on Target Detection and Tracking of Overhead Persistent Infrared Systems

DTIC Science & Technology

2015-12-01

infrared CdSe cadmium selenide DSP Defense Support Program FIR far-infrared FPA focal plane array Ge germanium GEO geostationary earth orbit...HBCRT High Energy Laser Beam Control Research Testbed HEL high energy laser HgCdTe mercury cadmium telluride IR infrared InSb indium antimonide...MOD model MTF modulation transfer function MWIR mid-wave infrared NIR near infrared OPIR overhead persistent infrared PbSe lead selenide

Proceedings of the symposium on Nuclear Radiation Detection Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perry, D.L.; Burger, A.; Franks, L.

2008-07-01

This symposium provides a venue for the presentation of the latest results and discussion of radiation detection materials from both experimental and theoretical standpoints. As advances are made in this area of materials, additional experimental and theoretical approaches are used to both guide the growth of materials and to characterize the materials that have a wide array of applications for detecting different types of radiation. The types of detector materials for semiconductors and scintillators include a variety of molecular compounds such as lanthanum halides (LaX{sub 3}), zinc oxide (ZnO), lead iodide (PbI{sub 2}), cadmium telluride (CdTe), mercuric iodide (HgI{sub 2}),more » thallium bromide (TlBr), as well as others, such as cadmium zinc telluride (CZT). An additional class of scintillators includes those based on organic compounds and glasses. Ideally, desired materials used for radiation detection have attributes such as appropriate-range band-gaps, high atomic numbers of the central element, high densities, performance at room temperature, and strong mechanical properties, and are low cost in terms of their production. There are significant gaps in the knowledge related to these materials that are very important in making radiation detector materials that are higher quality in terms of their reproducible purity, homogeneity, and mechanical integrity. The topics that are the focal point of this symposium address these issues so that much better detectors may be made in the future. Topics cover the following areas: - Material growth: on-going developments regarding cadmium telluride (CdTe), cadmium zinc telluride (CZT), mercuric iodide (HgI{sub 2}), cadmium manganese telluride (CMT), LaX{sub 3}, and all other detector materials; new materials with potential for radiation detection (II-VI, III-VI, III-VII compounds, neutron detectors, nano-materials, and ceramic scintillators); purification techniques; and growth methods; - Characterization: experimental results; methodologies; defect structure; surface and bulk effects; and interfacial phenomena (contacting, contact adhesion, crystallographic polarity, Schottky barrier, and surface passivation); - Physical and mechanical properties: electric charge compensation mechanisms, charge collection, and thermal transport; hardness; and plasticity; - New and innovative characterization techniques: optical spectroscopy; microscopy (SEM, TEM, STM, AFM, etc.); synchrotron mapping and X-ray diffraction; rocking curves; and spectroscopy (IR, Raman, NMR, XPS, Auger, and other applicable approaches); - Theoretical studies: bandgap calculations; mobility calculations; scintillator material physics; thermal modeling; crystal growth; processes in material matrices; and processes in amorphous and crystalline matrices.« less

Optical control of spin-dependent thermal transport in a quantum ring

NASA Astrophysics Data System (ADS)

Abdullah, Nzar Rauf

2018-05-01

We report on calculation of spin-dependent thermal transport through a quantum ring with the Rashba spin-orbit interaction. The quantum ring is connected to two electron reservoirs with different temperatures. Tuning the Rashba coupling constant, degenerate energy states are formed leading to a suppression of the heat and thermoelectric currents. In addition, the quantum ring is coupled to a photon cavity with a single photon mode and linearly polarized photon field. In a resonance regime, when the photon energy is approximately equal to the energy spacing between two lowest degenerate states of the ring, the polarized photon field can significantly control the heat and thermoelectric currents in the system. The roles of the number of photon initially in the cavity, and electron-photon coupling strength on spin-dependent heat and thermoelectric currents are presented.

Carrier concentration tuning in thermoelectric thiospinel Cu2CoTi3S8 by oxidative extraction of copper

NASA Astrophysics Data System (ADS)

Hashikuni, Katsuaki; Suekuni, Koichiro; Watanabe, Kosuke; Bouyrie, Yohan; Ohta, Michihiro; Ohtaki, Michitaka; Takabatake, Toshiro

2018-03-01

We report a method for carrier concentration tuning in the thermoelectric thiospinel Cu2CoTi3S8, which exhibits an n-type metallic character and a high power factor. An oxidative Cu extraction treatment produced Cu defects, resulting in Cu2-xCoTi3S8 up to x = 0.62. The electron carrier concentration was effectively reduced by this treatment, leading to the decrease in power factor, whereas the electronic contribution to the thermal conductivity was suppressed. As a result, the dimensionless figure of merit ZT remained unchanged as 0.2 at 670 K in the whole range of x ≤ 0.62. The oxidative Cu extraction described in this paper offers an opportunity to tune the electron carrier concentration for Cu-containing thermoelectric materials.

High temperature thermoelectric properties of rock-salt structure PbS

DOE PAGES

Parker, David S.; Singh, David J.

2013-12-18

We present an analysis of the high temperature transport properties of rock-salt structure PbS, a sister compound to the better studied lead chalcogenides PbSe and PbTe. In this study, we find thermopower magnitudes exceeding 200 V/K in a wide doping range for temperatures of 800 K and above. Based on these calculations, and an analysis of recent experimental work we find that this material has a potential for high thermoelectric performance. Also, we find favorable mechanical properties, based on an analysis of published data.

Doping in controlling the type of conductivity in bulk and nanostructured thermoelectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuks, D.; Komisarchik, G.; Kaller, M.

2016-08-15

Doping of materials for thermoelectric applications is widely used nowadays to control the type of conductivity. We report the results of ab-initio calculations aimed at developing the consistent scheme for determining the role of impurities that may change the type of conductivity in two attractive thermoelectric classes of materials. It is demonstrated that alloying of TiNiSn with Cu makes the material of n-type, and alloying with Fe leads to p-type conductivity. Similar calculations for PbTe with small amount of Na substituting for Pb leads to p-type conductivity, while Cl substituting for Te makes PbTe an n-type material. It is shownmore » also that for nano-grained materials the n-type conductivity should be observed. The effect of impurities segregating to the grain boundaries in nano-structured PbTe is also discussed. - Highlights: • Bulk and nano-grained TE materials were analyzed by DFT. • The electronic effects on both PbTe and TiNiSn were demonstrated. • The role of impurities on the conductivity type was analyzed. • Interfacial states in nano-grained PbTe affect the conductivity type.« less

Exceptional thermoelectric performance of a "star-like" SnSe nanotube with ultra-low thermal conductivity and a high power factor.

PubMed

Lin, Chensheng; Cheng, Wendan; Guo, Zhengxiao; Chai, Guoliang; Zhang, Hao

2017-08-30

Efficient thermoelectric energy conversion is both crucial and challenging, and requires new material candidates by design. From first principles simulations, we identify that a "star-like" SnSe nanotube - with alternating dense and loose rings along the tube direction - gives rise to an ultra-low lattice thermal conductivity, 0.18 W m -1 K -1 at 750 K, and a large Seebeck coefficient, compared with single crystal SnSe. The power factor of the p-type SnSe nanotube reaches its maximum value of 235 μW cm -1 K -2 at a moderate doping level of around 10 20 -10 21 cm -3 . The p-type nanotube shows better thermoelectric properties than the n-type one. The phonon anharmonic scattering rate of the SnSe nanotube is larger than that of the SnSe crystal. All of these factors lead to an exceptional figure-of-merit (ZT) value of 3.5-4.6 under the optimal conditions, compared to 0.6-2.6 for crystalline SnSe. Such a large ZT value should lead to a six-fold increase in the energy conversion efficiency to about 30%.

High Temperature Integrated Thermoelectric Ststem and Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mike S. H. Chu

2011-06-06

The final goal of this project is to produce, by the end of Phase II, an all ceramic high temperature thermoelectric module. Such a module design integrates oxide ceramic n-type, oxide ceramic p-type materials as thermoelectric legs and oxide ceramic conductive material as metalizing connection between n-type and p-type legs. The benefits of this all ceramic module are that it can function at higher temperatures (> 700 C), it is mechanically and functionally more reliable and it can be scaled up to production at lower cost. With this all ceramic module, millions of dollars in savings or in new opportunitiesmore » recovering waste heat from high temperature processes could be made available. A very attractive application will be to convert exhaust heat from a vehicle to reusable electric energy by a thermoelectric generator (TEG). Phase I activities were focused on evaluating potential n-type and p-type oxide compositions as the thermoelectric legs. More than 40 oxide ceramic powder compositions were made and studied in the laboratory. The compositions were divided into 6 groups representing different material systems. Basic ceramic properties and thermoelectric properties of discs sintered from these powders were measured. Powders with different particles sizes were made to evaluate the effects of particle size reduction on thermoelectric properties. Several powders were submitted to a leading thermoelectric company for complete thermoelectric evaluation. Initial evaluation showed that when samples were sintered by conventional method, they had reasonable values of Seebeck coefficient but very low values of electrical conductivity. Therefore, their power factors (PF) and figure of merits (ZT) were too low to be useful for high temperature thermoelectric applications. An unconventional sintering method, Spark Plasma Sintering (SPS) was determined to produce better thermoelectric properties. Particle size reduction of powders also was found to have some positive benefits. Two composition systems, specifically 1.0 SrO - 0.8 x 1.03 TiO2 - 0.2 x 1.03 NbO2.5 and 0.97 TiO2 - 0.03 NbO2.5, have been identified as good base line compositions for n-type thermoelectric compositions in future module design. Tests of these materials at an outside company were promising using that company's processing and material expertise. There was no unique p-type thermoelectric compositions identified in phase I work other than several current cobaltite materials. Ca3Co4O9 will be the primary p-type material for the future module design until alternative materials are developed. BaTiO3 and rare earth titanate based dielectric compositions show both p-type and n-type behavior even though their electrical conductivities were very low. Further research and development of these materials for thermoelectric applications is planned in the future. A preliminary modeling and optimization of a thermoelectric generator (TEG) that uses the n-type 1.0 SrO - 1.03 x 0.8 TiO2 - 1.03 x 0.2 NbO2.5 was performed. Future work will combine development of ceramic powders and manufacturing expertise at TAM, development of SPS at TAM or a partner organization, and thermoelectric material/module testing, modeling, optimization, production at several partner organizations.« less

Thermoelectric properties of topological insulator BaSn2

NASA Astrophysics Data System (ADS)

Guo, San-Dong; Qiu, Liang

2017-01-01

Recently, \\text{BaS}{{\\text{n}}2} has been predicted to be a strong topological insulator by the first-principle calculations. It is well known that topological insulators have a close connection to thermoelectric materials, such as the \\text{B}{{\\text{i}}2}\\text{T}{{\\text{e}}3} family. In this work, we investigate thermoelectric properties of \\text{BaS}{{\\text{n}}2} by the first-principles calculations combined with the Boltzmann transport theory. The electronic part is carried out by a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC), while the phonon part is performed using a generalized gradient approximation (GGA). It was found that the electronic transport coefficients between the in-plane and cross-plane directions showed strong anisotropy, while lattice-lattice thermal conductivities demonstrated almost complete isotropy. Calculated results revealed a very low lattice thermal conductivity for \\text{BaS}{{\\text{n}}2} , and the corresponding average lattice thermal conductivity at room temperature is 1.69 \\text{W}~{{\\text{m}}-1}~{{\\text{K}}-1} , which is comparable or lower than those of lead chalcogenides and bismuth-tellurium systems as classic thermoelectric materials. Due to the complicated scattering mechanism, calculating the scattering time τ is challenging. By using an empirical τ ={{10}-14} s, the n-type figure of merit ZT is greater than 0.40 in wide temperature ranges. Experimentally, it is possible to attain better thermoelectric performance by strain or tuning size parameters. This work indicates that \\text{BaS}{{\\text{n}}2} may be a potential thermoelectric material, which can stimulate further theoretical and experimental work.

Region 8: Colorado Denver, Pagosa Springs and Telluride Adequate Letter (8/18/2000)

EPA Pesticide Factsheets

This letter from EPA to Colorado Department of Public Health and Environment determined Denvers' Carbon Monoxide (CO) maintenance plan, Pagosa Springs and Tellurides' Particulate Matter (PM10) maintenance plans for Motor Vehicle Emissions Budgets adequate

Crystal Growth Furnace - An overview of the system configuration and planned experiments on the First United States Microgravity Laboratory mission

NASA Technical Reports Server (NTRS)

Srinivas, R.; Schaefer, D. A.

1992-01-01

The Crystal Growth Furnace (CGF) system configuration for the First United States Microgravity Laboratory (USML-1) mission is reviewed, and the planned on-orbit experiments are briefly described. The CGF is configured to accommodate four scientific experiments involving crystal growth which are based on the classical Bridgman method and CVT method, including vapor transport crystal growth of mercury cadmium telluride; crystal growth of mercury zinc telluride by directional solidification; seeded Bridgman growth of zinc-doped cadmium telluride; and Bridgman growth of selenium-doped gallium arsenide.

Cadmium telluride in tellurium—cadmium films consisting of ultradispersed particles

NASA Astrophysics Data System (ADS)

Tuleushev, Yu. Zh.; Volodin, V. N.; Migunova, A. A.; Lisitsyn, V. N.

2015-08-01

Solid solutions of tellurium in cadmium, cadmium in tellurium, and cadmium in cadmium telluride synthesized during sputtering are formed for the first time by ion-plasma sputtering and the codeposition of ultradispersed Te and Cd particle fluxes onto substrates moving with respect to the fluxes. This fact supports thermofluctuation melting and coalescence of small particles. The lattice parameter of cadmium telluride, which coexists with an amorphous solid solution of tellurium in cadmium in a coating, is smaller than the tabulated value and reaches it when the cadmium concentration in a coating increases to 70 at %. The lattice parameter of the fcc lattice of cadmium telluride increases with the cadmium concentration in a coating according to the linear relation a = 0.0002CCd + 0.6346 nm (where CCd is the cadmium concentration in the coating, at %), which is likely to indicate a certain broadening of the homogeneity area. The estimation of the particle size shows that the cadmium telluride grain size is 10-15 nm, which implies that the coatings are nanocrystalline. The absorption and transmission spectra of the tellurium—cadmium films at the fundamental absorption edge demonstrate that their energy gaps are larger than that of stoichiometric CdTe, which can be explained by the experimental conditions of crystal structure formation.

Electrodeposition of Ni on Bi2Te3 and Interfacial Reaction Between Sn and Ni-Coated Bi2Te3

NASA Astrophysics Data System (ADS)

Tseng, Yu-Chen; Lee, Hsuan; Hau, Nga Yu; Feng, Shien-Ping; Chen, Chih-Ming

2018-01-01

Bismuth-telluride (Bi2Te3)-based compounds are common thermoelectric materials used for low-temperature applications, and nickel (Ni) is usually deposited on the Bi2Te3 substrates as a diffusion barrier. Deposition of Ni on the p-type (Sb-doped) and n-type (Se-doped) Bi2Te3 substrates using electroplating and interfacial reactions between Sn and Ni-coated Bi2Te3 substrates are investigated. Electrodeposition of Ni on different Bi2Te3 substrates is characterized based on cyclic voltammetry and Tafel measurements. Microstructural characterizations of the Ni deposition and the Sn/Ni/Bi2Te3 interfacial reactions are performed using scanning electron microscopy. A faster growth rate is observed for the Ni deposition on the n-type Bi2Te3 substrate which is attributed to a lower activation energy of reduction due to a higher density of free electrons in the n-type Bi2Te3 material. The common Ni3Sn4 phase is formed at the Sn/Ni interfaces on both the p-type and n-type Bi2Te3 substrates, while the NiTe phase is formed at a faster rate at the interface between Ni and n-type Bi2Te3 substrates.

Thin-film thermoelectric devices with high room-temperature figures of merit.

PubMed

Venkatasubramanian, R; Siivola, E; Colpitts, T; O'Quinn, B

2001-10-11

Thermoelectric materials are of interest for applications as heat pumps and power generators. The performance of thermoelectric devices is quantified by a figure of merit, ZT, where Z is a measure of a material's thermoelectric properties and T is the absolute temperature. A material with a figure of merit of around unity was first reported over four decades ago, but since then-despite investigation of various approaches-there has been only modest progress in finding materials with enhanced ZT values at room temperature. Here we report thin-film thermoelectric materials that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys. This amounts to a maximum observed factor of approximately 2.4 for our p-type Bi2Te3/Sb2Te3 superlattice devices. The enhancement is achieved by controlling the transport of phonons and electrons in the superlattices. Preliminary devices exhibit significant cooling (32 K at around room temperature) and the potential to pump a heat flux of up to 700 W cm-2; the localized cooling and heating occurs some 23,000 times faster than in bulk devices. We anticipate that the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications: for example, in thermochemistry-on-a-chip, DNA microarrays, fibre-optic switches and microelectrothermal systems.

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

PubMed Central

Hao, Feng; Qiu, Pengfei; Song, Qingfeng; Chen, Hongyi; Lu, Ping; Ren, Dudi; Shi, Xun; Chen, Lidong

2017-01-01

Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix. PMID:28772610

Thermoelectric properties optimization of Fe{sub 2}VGa by tuning electronic density of states via titanium doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Pai-Chun, E-mail: pcwei68@gmail.com, E-mail: cheny2@phys.sinica.edu.tw; Huang, Ta-Sung; Chen, Yang-Yuan, E-mail: pcwei68@gmail.com, E-mail: cheny2@phys.sinica.edu.tw

2015-10-28

We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe{sub 2}V{sub 1-x}Ti{sub x}Ga by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe{sub 2}VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogapmore » to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m{sup −1} K{sup −2} at room temperature, which is comparable to the power factors of Bi{sub 2}Te{sub 3}-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe{sub 2}VGa.« less

Effects of Rapid Solidification on Phase Formation and Microstructure Evolution of AgSbTe₂-Based Thermoelectric Compounds.

PubMed

Castellero, Alberto; Fiore, Gianluca; Evenstein, Eliran; Baricco, Marcello; Amouyal, Yaron

2017-03-01

We report on rapid solidification of an Ag(16.7)Sb(30.0)Te(53.3) compound using planar flow casting to stabilize the δ-AgSbTe₂ single phase and avoid precipitation of the interconnected Sb₂Te₃ phase, which leads to deterioration of thermoelectric properties. Rapidly solidified samples are in form of flakes with different thickness (60–400 μm). Precipitation of Sb2Te₃ phase is fully inhibited in thin flakes (thickness below 100 μm), which consist of an homogeneous δ-AgSbTe₂ matrix, whereas isolated Sb₂Te₃ precipitates, dispersed throughout the δ-AgSbTe₂ matrix, were found in thick flakes (thickness above 100 μm). The lattice parameter of the δ-AgSbTe₂ phase progressively increases with the cooling rate, indicating progressive supersaturation of the matrix for high degree of supercooling. Bulk specimens were prepared by hot pressing of the rapidly solidified flakes to evaluate thermoelectric properties. After sintering of the rapidly solidified flakes, the differential scanning calorimetry (DSC) traces indicates partial decomposition of the non equilibrium δ-AgSbTe₂ into the stable phases. Measurements of the thermoelectric transport properties indicate the positive effects of rapid solidification on thermal conductivity and Seebeck coefficient and its negative effect on electrical conductivity, suggesting an operative way to improve thermoelectric performance.

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te₃.

PubMed

Hao, Feng; Qiu, Pengfei; Song, Qingfeng; Chen, Hongyi; Lu, Ping; Ren, Dudi; Shi, Xun; Chen, Lidong

2017-03-01

Recently, Cu-containing p-type Bi 0.5 Sb 1.5 Te₃ materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi 0.5 Sb 1.5 Te₃ is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi 0.5 Sb 1.5 Te₃ materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance-with a maximum thermoelectric figure of merit of around 1.4 at 430 K-has been achieved in Cu 0.005 Bi 0.5 Sb 1.495 Te₃, which is 70% higher than the Bi 0.5 Sb 1.5 Te₃ matrix.

Controlling compositional homogeneity and crystalline orientation in Bi 0.8 Sb 0.2 thermoelectric thin films [Control of composition and crystallinity in Bi 0.8Sb 0.2 thermoelectric thin films].

DOE PAGES

Rochford, C.; Medlin, D. L.; Erickson, K. J.; ...

2015-12-01

Controlling alloy composition, crystalline quality, and crystal orientation is necessary to achieve high thermoelectric performance in Bi 1-xSb x thin films. These microstructural attributes are demonstrated in this letter via co-sputter deposition of Bi and Sb metals on Si/SiO 2 substrates followed by ex-situ post anneals ranging from 200 – 300 °C in forming gas with rapid cooling to achieve orientation along the trigonal axis. We show with cross-sectional transmission electron microscopy and energy-dispersive X-ray spectrometry that 50 – 95% of the Sb segregates at the surface upon exposure to air during transfer. This then forms a nanocrystalline Sb 2Omore » 3 layer upon annealing, leaving the bulk of the film primarily Bi metal which is a poor thermoelectric material. We demonstrate a SiN capping technique to eliminate Sb segregation and preserve a uniform composition throughout the thickness of the film. Given that the Bi 1-xSb x solid solution melting point depends on the Sb content, the SiN cap allows one to carefully approach but not exceed the melting point during annealing. This leads to the strong orientation along the trigonal axis and high crystalline quality desired for thermoelectric applications.« less

Multifunctional Cu2-xTe Nanocubes Mediated Combination Therapy for Multi-Drug Resistant MDA MB 453

NASA Astrophysics Data System (ADS)

Poulose, Aby Cheruvathoor; Veeranarayanan, Srivani; Mohamed, M. Sheikh; Aburto, Rebeca Romero; Mitcham, Trevor; Bouchard, Richard R.; Ajayan, Pulickel M.; Sakamoto, Yasushi; Maekawa, Toru; Kumar, D. Sakthi

2016-10-01

Hypermethylated cancer populations are hard to treat due to their enhanced chemo-resistance, characterized by aberrant methylated DNA subunits. Herein, we report on invoking response from such a cancer lineage to chemotherapy utilizing multifunctional copper telluride (Cu2-XTe) nanocubes (NCs) as photothermal and photodynamic agents, leading to significant anticancer activity. The NCs additionally possessed photoacoustic and X-ray contrast imaging abilities that could serve in image-guided therapeutic studies.

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing, Guangzong; Sun, Jifeng; Li, Yuwei

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Band structure modification of the thermoelectric Heusler-phase TiFe2Sn via Mn substitution.

PubMed

Zou, Tianhua; Jia, Tiantian; Xie, Wenjie; Zhang, Yongsheng; Widenmeyer, Marc; Xiao, Xingxing; Weidenkaff, Anke

2017-07-19

Doping (or substitution)-induced modification of the electronic structure to increase the electronic density of states (eDOS) near the Fermi level is considered as an effective strategy to enhance the Seebeck coefficient, and may consequently boost the thermoelectric performance. Through density-functional theory calculations of Mn-substituted TiFe 2-x Mn x Sn compounds, we demonstrate that the d-states of the substituted Mn atoms induce a strong resonant level near the Fermi energy. Our experimental results are in good agreement with the calculations. They show that Mn substitution results in a large increase of the Seebeck coefficient, arising from an enhanced eDOS in Heusler compounds. The results prove that a proper substitution position and element selection can increase the eDOS, leading to a higher Seebeck coefficient and thermoelectric performance of ecofriendly materials.

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE PAGES

Xing, Guangzong; Sun, Jifeng; Li, Yuwei; ...

2018-05-21

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Region 8: Colorado Telluride Adequate Letter (8/17/2011)

EPA Pesticide Factsheets

This March 4, 2011 letter from EPA to Chistopher E. Urbina M.D., MPH, Colorado Department of Public Health and Environment states that EPA has found that the Telluride, CO PM10 maintenance plan and the 2021 motor vehicle emisssions budget (MVEB) adequate

Microgravity

NASA Image and Video Library

2004-04-15

A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly. In space, the ingredients mix more homogenously, resulting in a superior product.

Separation of heat and charge currents for boosted thermoelectric conversion

NASA Astrophysics Data System (ADS)

Mazza, Francesco; Valentini, Stefano; Bosisio, Riccardo; Benenti, Giuliano; Giovannetti, Vittorio; Fazio, Rosario; Taddei, Fabio

2015-06-01

In a multiterminal device the (electronic) heat and charge currents can follow different paths. In this paper we introduce and analyze a class of multiterminal devices where this property is pushed to its extreme limits, with charge and heat currents flowing in different reservoirs. After introducing the main characteristics of this heat-charge current separation regime, we show how to realize it in a multiterminal device with normal and superconducting leads. We demonstrate that this regime allows us to control independently heat and charge flows and to greatly enhance thermoelectric performances at low temperatures. We analyze in detail a three-terminal setup involving a superconducting lead, a normal lead, and a voltage probe. For a generic scattering region we show that in the regime of heat-charge current separation both the power factor and the figure of merit Z T are highly increased with respect to a standard two-terminal system. These results are confirmed for the specific case of a system consisting of three coupled quantum dots.

Realizing zT of 2.3 in Ge1-x-y Sbx Iny Te via Reducing the Phase-Transition Temperature and Introducing Resonant Energy Doping.

PubMed

Hong, Min; Chen, Zhi-Gang; Yang, Lei; Zou, Yi-Chao; Dargusch, Matthew S; Wang, Hao; Zou, Jin

2018-03-01

GeTe with rhombohedral-to-cubic phase transition is a promising lead-free thermoelectric candidate. Herein, theoretical studies reveal that cubic GeTe has superior thermoelectric behavior, which is linked to (1) the two valence bands to enhance the electronic transport coefficients and (2) stronger enharmonic phonon-phonon interactions to ensure a lower intrinsic thermal conductivity. Experimentally, based on Ge 1- x Sb x Te with optimized carrier concentration, a record-high figure-of-merit of 2.3 is achieved via further doping with In, which induces the distortion of the density of states near the Fermi level. Moreover, Sb and In codoping reduces the phase-transition temperature to extend the better thermoelectric behavior of cubic GeTe to low temperature. Additionally, electronic microscopy characterization demonstrates grain boundaries, a high-density of stacking faults, and nanoscale precipitates, which together with the inevitable point defects result in a dramatically decreased thermal conductivity. The fundamental investigation and experimental demonstration provide an important direction for the development of high-performance Pb-free thermoelectric materials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Unified theory for inhomogeneous thermoelectric generators and coolers including multistage devices.

PubMed

Gerstenmaier, York Christian; Wachutka, Gerhard

2012-11-01

A novel generalized Lagrange multiplier method for functional optimization with inclusion of subsidiary conditions is presented and applied to the optimization of material distributions in thermoelectric converters. Multistaged devices are considered within the same formalism by inclusion of position-dependent electric current in the legs leading to a modified thermoelectric equation. Previous analytical solutions for maximized efficiencies for generators and coolers obtained by Sherman [J. Appl. Phys. 31, 1 (1960)], Snyder [Phys. Rev. B 86, 045202 (2012)], and Seifert et al. [Phys. Status Solidi A 207, 760 (2010)] by a method of local optimization of reduced efficiencies are recovered by independent proof. The outstanding maximization problems for generated electric power and cooling power can be solved swiftly numerically by solution of a differential equation-system obtained within the new formalism. As far as suitable materials are available, the inhomogeneous TE converters can have increased performance by use of purely temperature-dependent material properties in the thermoelectric legs or by use of purely spatial variation of material properties or by a combination of both. It turns out that the optimization domain is larger for the second kind of device which can, thus, outperform the first kind of device.

Structurally complex Zintl compounds for high temperature thermoelectric power generation

NASA Astrophysics Data System (ADS)

Zevalkink, Alexandra; Pomrehn, Gregory; Gibbs, Zachary; Snyder, Jeffrey

2014-03-01

Zintl phases, characterized by covalently-bonded substructures surrounded by highly electropositive cations, exhibit many of the characteristics desired for thermoelectric applications. Recently, we demonstrated promising thermoelectric performance (zT values between 0.4 and 0.9) in a class of Zintl antimonides that share a common structural motif: anionic moieties resembling infinite chains of linked tetrahedra. These compounds (A5M2 Sb6 and A3 M Sb3 compounds where A = Ca or Sr and M = Al, Ga and In) crystallize as four distinct, but closely related chain-forming structure types. Their large unit cells lead to exceptionally low lattice thermal conductivity due to the containment of heat in low velocity optical phonon modes. Here, we show that chemical substitutions on the A and M sites can be used to control the electronic and thermal transport properties and optimize the thermoelectric figure of merit. Doping with alio-valent elements allows for rational control of the carrier concentration, while isoelectronic substitutions can be used to fine-tune the intrinsic properties. A combination of Density Functional calculations and classical transport models was used to explain the experimentally observed transport properties of these compounds.

Electron mean-free-path filtering in Dirac material for improved thermoelectric performance.

PubMed

Liu, Te-Huan; Zhou, Jiawei; Li, Mingda; Ding, Zhiwei; Song, Qichen; Liao, Bolin; Fu, Liang; Chen, Gang

2018-01-30

Recent advancements in thermoelectric materials have largely benefited from various approaches, including band engineering and defect optimization, among which the nanostructuring technique presents a promising way to improve the thermoelectric figure of merit ( zT ) by means of reducing the characteristic length of the nanostructure, which relies on the belief that phonons' mean free paths (MFPs) are typically much longer than electrons'. Pushing the nanostructure sizes down to the length scale dictated by electron MFPs, however, has hitherto been overlooked as it inevitably sacrifices electrical conduction. Here we report through ab initio simulations that Dirac material can overcome this limitation. The monotonically decreasing trend of the electron MFP allows filtering of long-MFP electrons that are detrimental to the Seebeck coefficient, leading to a dramatically enhanced power factor. Using SnTe as a material platform, we uncover this MFP filtering effect as arising from its unique nonparabolic Dirac band dispersion. Room-temperature zT can be enhanced by nearly a factor of 3 if one designs nanostructures with grain sizes of ∼10 nm. Our work broadens the scope of the nanostructuring approach for improving the thermoelectric performance, especially for materials with topologically nontrivial electronic dynamics.

Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Pengjun; Wang, Hongguang; Kong, Wenwen

2014-11-21

We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating highmore » carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.« less

Optimal thermoelectric figure of merit of a molecular junction

NASA Astrophysics Data System (ADS)

Murphy, Padraig; Mukerjee, Subroto; Moore, Joel

2008-10-01

We show that a molecular junction can give large values of the thermoelectric figure of merit ZT , and so it could be used as a solid-state energy-conversion device that operates close to the Carnot efficiency. The mechanism is similar to the Mahan-Sofo model for bulk thermoelectrics—the Lorenz number goes to zero violating the Wiedemann-Franz law while the thermopower remains nonzero. The molecular state through which charge is transported must be weakly coupled to the leads, and the energy level of the state must be of order kBT away from the Fermi energy of the leads. In practice, the figure of merit is limited by the phonon thermal conductance; we show that the largest possible Z Ttilde ( Gtilde thph)-1/2 , where Gtilde thph is the phonon thermal conductance divided by the thermal conductance quantum.

Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru; Zablotsky, S. V.; Shilyaev, A. V.

Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on silicon substrates are studied. The low-temperature photoluminescence method reveals that there are comparatively deep levels with energies of 50 to 60 meV and shallower levels with energies of 20 to 30 meV in the band gap. Analysis of the temperature dependence of the minority carrier lifetime demonstrates that this lifetime is controlled by energy levels with an energy of ∼30 meV. The possible relationship between energy states and crystal-structure defects is discussed.

Simulations for the Development of Thermoelectric Measurements

NASA Astrophysics Data System (ADS)

Zabrocki, Knud; Ziolkowski, Pawel; Dasgupta, Titas; de Boor, Johannes; Müller, Eckhard

2013-07-01

In thermoelectricity, continuum theoretical equations are usually used for the calculation of the characteristics and performance of thermoelectric elements, modules or devices as a function of external parameters (material, geometry, temperatures, current, flow, load, etc.). An increasing number of commercial software packages aimed at applications, such as COMSOL and ANSYS, contain vkernels using direct thermoelectric coupling. Application of these numerical tools also allows analysis of physical measurement conditions and can lead to specifically adapted methods for developing special test equipment required for the determination of TE material and module properties. System-theoretical and simulation-based considerations of favorable geometries are taken into account to create draft sketches in the development of such measurement systems. Particular consideration is given to the development of transient measurement methods, which have great advantages compared with the conventional static methods in terms of the measurement duration required. In this paper the benefits of using numerical tools in designing measurement facilities are shown using two examples. The first is the determination of geometric correction factors in four-point probe measurement of electrical conductivity, whereas the second example is focused on the so-called combined thermoelectric measurement (CTEM) system, where all thermoelectric material properties (Seebeck coefficient, electrical and thermal conductivity, and Harman measurement of zT) are measured in a combined way. Here, we want to highlight especially the measurement of thermal conductivity in a transient mode. Factors influencing the measurement results such as coupling to the environment due to radiation, heat losses via the mounting of the probe head, as well as contact resistance between the sample and sample holder are illustrated, analyzed, and discussed. By employing the results of the simulations, we have developed an improved sample head that allows for measurements over a larger temperature interval with enhanced accuracy.

Identifying Electricity Capacity at Risk to Changes in Climate and Water Resources in the United States

NASA Astrophysics Data System (ADS)

Miara, A.; Macknick, J.; Vorosmarty, C. J.; Corsi, F.; Fekete, B. M.; Newmark, R. L.; Tidwell, V. C.; Cohen, S. M.

2016-12-01

Thermoelectric plants supply 85% of electricity generation in the United States. Under a warming climate, the performance of these power plants may be reduced, as thermoelectric generation is dependent upon cool ambient temperatures and sufficient water supplies at adequate temperatures. In this study, we assess the vulnerability and reliability of 1,100 operational power plants (2015) across the contiguous United States under a comprehensive set of climate scenarios (five Global Circulation Models each with four Representative Concentration Pathways). We model individual power plant capacities using the Thermoelectric Power and Thermal Pollution model (TP2M) coupled with the Water Balance Model (WBM) at a daily temporal resolution and 5x5 km spatial resolution. Together, these models calculate power plant capacity losses that account for geophysical constraints and river network dynamics. Potential losses at the single-plant level are put into a regional energy security context by assessing the collective system-level reliability at the North-American Electricity Reliability Corporation (NERC) regions. Results show that the thermoelectric sector at the national level has low vulnerability under the contemporary climate and that system-level reliability in terms of available thermoelectric resources relative to thermoelectric demand is sufficient. Under future climates scenarios, changes in water availability and warm ambient temperatures lead to constraints on operational capacity and increased vulnerability at individual power plant sites across all regions in the United States. However, there is a strong disparity in regional vulnerability trends and magnitudes that arise from each region's climate, hydrology and technology mix. Despite increases in vulnerabilities at the individual power plant level, regional energy systems may still be reliable (with no system failures) due to sufficient back-up reserve capacities.

Phonon Speed, Not Scattering, Differentiates Thermal Transport in Lead Halide Perovskites.

PubMed

Elbaz, Giselle A; Ong, Wee-Liat; Doud, Evan A; Kim, Philip; Paley, Daniel W; Roy, Xavier; Malen, Jonathan A

2017-09-13

Thermal management plays a critical role in the design of solid state materials for energy conversion. Lead halide perovskites have emerged as promising candidates for photovoltaic, thermoelectric, and optoelectronic applications, but their thermal properties are still poorly understood. Here, we report on the thermal conductivity, elastic modulus, and sound speed of a series of lead halide perovskites MAPbX 3 (X = Cl, Br, I), CsPbBr 3 , and FAPbBr 3 (MA = methylammonium, FA = formamidinium). Using frequency domain thermoreflectance, we find that the room temperature thermal conductivities of single crystal lead halide perovskites range from 0.34 to 0.73 W/m·K and scale with sound speed. These results indicate that regardless of composition, thermal transport arises from acoustic phonons having similar mean free path distributions. A modified Callaway model with Born von Karmen-based acoustic phonon dispersion predicts that at least ∼70% of thermal conductivity results from phonons having mean free paths shorter than 100 nm, regardless of whether resonant scattering is invoked. Hence, nanostructures or crystal grains with dimensions smaller than 100 nm will appreciably reduce thermal transport. These results are important design considerations to optimize future lead halide perovskite-based photovoltaic, optoelectronic, and thermoelectric devices.

Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

PubMed

Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T

2015-12-09

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

Thermoelectric performance of co-doped SnTe with resonant levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Min; Han, Yemao; Li, Laifeng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com

2016-07-25

Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n{sub H}) and extrinsic dopant concentration (N{sub I}, N{sub Ag}) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n{sub H}.more » Upon substituting extrinsic dopants beyond a certain amount, the n{sub H} changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.« less

121. FRONT ELEVATION OF TELLURIDE IRON WORKS 2.5 BY 4FOOT ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

121. FRONT ELEVATION OF TELLURIDE IRON WORKS 2.5 BY 4-FOOT RETORT, USED TO FLASH MERCURY FROM GOLD. MERCURY VAPOR THEN CONDENSED ON INSIDE OF HOOD AND WAS COLLECTED FOR REUSE. - Shenandoah-Dives Mill, 135 County Road 2, Silverton, San Juan County, CO

21. Photocopied from blueprint, Olmstead Station Miscellaneous Drawings Folder, Engineering ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

21. Photocopied from blueprint, Olmstead Station Miscellaneous Drawings Folder, Engineering Department, Utah Power & Light Co., Salt Lake City, Utah. 'STATION GROUNDS, TELLURIDE POWER CO., PROVO, UTAH.' MAP,1903. - Telluride Power Company, Olmsted Hydroelectric Plant, mouth of Provo River Canyon West of U.S. Route 189, Orem, Utah County, UT

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

Films of cadmium sulfide and cadmium telluride have been produced by screen printing and sintering. Cadmium sulfide films ten microns thick had a resistivity in the 10 ohm-cm range. A technique was developed for forming a cadmium telluride layer on top of a cadmium sulfide layer. Process control and device preparation are areas requiring further study.

76 FR 46288 - Adequacy Determination for Colorado Springs, Cañon City, Greeley, Pagosa Springs, and Telluride...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-02

... Springs, Ca[ntilde]on City, Greeley, Pagosa Springs, and Telluride; Carbon Monoxide and PM 10 Maintenance... transportation conformity purposes: ``Revised Carbon Monoxide Attainment/Maintenance Plan Colorado Springs Attainment/ Maintenance Area'' and ``Revised Carbon Monoxide Maintenance Plan Greeley Attainment/Maintenance...

Photodiodes for ten micrometer laser communication systems

NASA Technical Reports Server (NTRS)

Cohen, S. C.

1972-01-01

The performance is discussed of 10-micron mercury-cadmiumtelluride and lead-tin-telluride photodiodes in laser heterodyne communication systems. The dependence of detector quantum efficiency, resistance, frequency response, and signal-to-noise ratio on temperature, bias, and local oscillator power are examined. Included in the discussion is an analysis of the feasibility of high temperature operation, and ability of the detector to dissipate power to a heat sink is explored. Some aspects of direct detection response are considered and figures showing flux levels from a blackbody presented.

Leading Edge. Sensors Challenges and Solutions for the 21st Century. Volume 7, Issue Number 2

DTIC Science & Technology

2010-01-01

above, microbolometer technology is not very sen- sitive. To gain sensitivity, one needs to go to IR cam- eras that have cryogenically cooled detector ...QWIP) and detector arrays made from mercury cadmium telluride ( MCT ). Both types can be very sensitive. QWIP cameras have spectral detection bands...commercially available IR camera to meet the needs of CAPTC. One MCT camera was located that had a detection band from 7.7 µ to 11.6 µ and included an

Investigation of the difficulties associated with the use of lead telluride and other II - IV compounds for thin film thermistors

NASA Technical Reports Server (NTRS)

Mclennan, W. D.

1975-01-01

The fabrication of thermistors was investigated for use as atmospheric temperature sensors in meteorological rocket soundings. The final configuration of the thin film thermistor is shown. The composition and primary functions of the six layers of the sensor are described. A digital controller for thin film deposition control is described which is capable of better than .1 A/sec rate control. The computer program modules for digital control of thin film deposition processing are included.

Carbon fiber polymer-matrix structural composites tailored for multifunctionality by filler incorporation

NASA Astrophysics Data System (ADS)

Han, Seungjin

This dissertation provides multifunctional carbon fiber polymer-matrix structural composites for vibration damping, thermal conduction and thermoelectricity. Specifically, (i) it has strengthened and stiffened carbon fiber polymer-matrix structural composites by the incorporation of halloysite nanotubes, carbon nanotubes and silicon carbide whiskers, (ii) it has improved mechanical energy dissipation using carbon fiber polymer-matrix structural composites with filler incorporation, (iii) it has increased the through-thickness thermal conductivity of carbon fiber polymer-matrix composite by curing pressure increase and filler incorporation, and (iv) it has enhanced the thermoelectric behavior of carbon fiber polymer-matrix structural composites. Low-cost natural halloysite nanotubes (0.1 microm diameter) were effective for strengthening and stiffening continuous fiber polymer-matrix composites, as shown for crossply carbon fiber (5 microm diameter, ˜59 vol.%) epoxy-matrix composites under flexure, giving 17% increase in strength, 11% increase in modulus and 21% decrease in ductility. They were less effective than expensive multiwalled carbon nanotubes (0.02 microm diameter), which gave 25% increase in strength, 11% increase in modulus and 14% decrease in ductility. However, they were more effective than expensive silicon carbide whiskers (1 microm diameter), which gave 15% increase in strength, 9% increase in modulus and 20% decrease in ductility. Each filler, at ˜2 vol.%, was incorporated in the composite at every interlaminar interface by fiber prepreg surface modification. The flexural strength increase due to halloysite nanotubes incorporation related to the interlaminar shear strength increase. The measured values of the composite modulus agreed roughly with the calculated values based on the Rule of Mixtures. Continuous carbon fiber composites with enhanced vibration damping under flexure are provided by incorporation of fillers between the laminae. Exfoliated graphite (EG) as a sole filler is more effective than carbon nanotube (SWCNT/MWCNT), halloysite nanotube (HNT) or nanoclay as sole fillers in enhancing the loss tangent, if the curing pressure is 2.0 (not 0.5) MPa. The MWCNT, SiC whisker and halloysite nanotube as sole fillers are effective for increasing the storage modulus. The combined use of a storage-modulus-enhancing filler (CNT, SiC whisker or HNT) and a loss-tangent-enhancing filler (EG or nanoclay) gives the best performance. With EG, HNT and 2.0-MPa curing, the loss modulus is increased by 110%, while the flexural strength is decreased by 14% and the flexural modulus is not affected. With nanoclay, HNT and 0.5-MPa curing, the loss modulus is increased by 96%, while the flexural strength and modulus are essentially not affected. The low through-thickness thermal conductivity limits heat dissipation from continuous carbon fiber polymer-matrix composites. This conductivity is increased by up to 60% by raising the curing pressure from 0.1 to 2.0 MPa and up to 33% by incorporation of a filler (61.5 vol.%) at the interlaminar interface. The thermal resistivity is dominated by the lamina resistivity (which is contributed substantially by the intralaminar fiber--fiber interfacial resistivity), with the interlaminar interface thermal resistivity being unexpectedly negligible. The lamina resistivity and intralaminar fiber-fiber interfacial resistivity are decreased by up to 56% by raising the curing pressure and up to 36% by filler incorporation. Thermoelectric structural materials are potentially attractive for large-scale energy harvesting. Through filler incorporation and unprecedented decoupling of the bulk (laminae) and interfacial (interlaminar interfaces) contributions to the Seebeck voltage (through-thickness Seebeck voltage of a crossply continuous carbon fiber/epoxy composite laminate), this work provides thermoelectric power magnitudes at ˜70°C up to 110, 1670 and 11000 microV/K for the laminate, a lamina and an interlaminar interface respectively. The interface provides an apparent thermoelectric effect due to carrier backflow. The interfacial voltage is opposite in sign from the laminate and lamina voltages and is slightly lower in magnitude than the lamina voltage. The through-thickness thermoelectric behavior of continuous carbon fiber epoxy-matrix structural composites has been greatly improved by the use of tellurium particles (13 vol.% of composite), bismuth telluride particles (2 vol.%) and carbon black (2 vol.%) at the interlaminar interface. The thermoelectric power is increased from 8 to 163 microV/K, while the electrical resistivity is decreased from 0.17 to 0.02 O.cm, the thermal conductivity is decreased from 1.31 to 0.51 W/m.K, and the dimensionless thermoelectric figure of merit ZT at 70°C is increased from 9 x 10-6 to 9 x 10-2. Decrease in the curing pressure from 4.0 to 0.5 MPa decreases ZT slightly, mainly due to the increase in electrical resistivity.

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Hui; Lu, Xu; Morelli, Donald T.

Boron-added CoSi, CoSi 0.98B 0.02, possesses a very high thermoelectric power factor of 60 μW cm -1 K -2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms are intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi 0.98B 0.02 has been studied. Here we present a study of themore » substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands while Ge substitution only shifts the Fermi level upward into the conduction band. Lastly, our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Hui, E-mail: huisun3@iflytek.com; Lu, Xu; Morelli, Donald T.

Boron-added CoSi, CoSi{sub 0.98}B{sub 0.02}, possesses a very high thermoelectric power factor of 60 μW cm{sup −1} K{sup −2} at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02} has been studied. Here, we present a study of the substitutionmore » of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02

DOE PAGES

Sun, Hui; Lu, Xu; Morelli, Donald T.

2016-07-21

Boron-added CoSi, CoSi 0.98B 0.02, possesses a very high thermoelectric power factor of 60 μW cm -1 K -2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms are intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi 0.98B 0.02 has been studied. Here we present a study of themore » substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands while Ge substitution only shifts the Fermi level upward into the conduction band. Lastly, our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

Semiconductor Nanowires and Nanotubes for Energy Conversion

NASA Astrophysics Data System (ADS)

Fardy, Melissa Anne

In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the PbSe nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at 300 K. In addition, using a field-effect gated device, the Seebeck coefficient of single PbSe nanowires could be tuned from 64 to 193 muV˙K-1. This direct electrical field control of the electrical conductivity and Seebeck coefficient suggests a powerful strategy for optimizing ZT in thermoelectric devices and these results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve. Recent theoretical work has shown large enhancements in ZT for single-crystal nanowires containing nanoscale interfaces along their lengths. M2O3(ZnO) n ( M = In, Ga, Fe) superlattice nanowires were synthesized via a novel solid-state diffusion approach to investigate this possible enhancement. Using atomic resolution Z-contrast STEM imaging a detailed structural analysis was performed on In2-xGaxO3(ZnO) n nanowires, leading to the discovery that octahedral inclusions within the superlattice structure are likely generated through a defect-assisted process. Single-nanowire thermal and electrical measurements on In2-x GaxO3(ZnO)n reveal a simultaneous improvement in all contributing factors to the thermoelectric figure of merit, giving an order of magnitude enhancement over similar bulk materials at room temperature. This is the first report of enhancement of all three thermoelectric parameters (Seebeck coefficient, electrical conductivity, and thermal resistivity) for a nanowire system. Photoelectrochemical water splitting is another exciting renewable energy application that can benefit from the high surface area of nanomaterials. Recently, (Ga1-xZnx)(N1-xOx) has gained widespread attention as a high efficiency material for visible-light-driven H2 and O2 generation. To improve the crystallinity of the material and reduce charge recombination (Ga1-xZnx)(N 1-xOx) nanotubes were synthesized by epitaxial coating of GaN onto ZnO nanowires. The nanotubes were single-crystalline, solid solutions of GaN and ZnO with ZnO compositions up to 10% and bandgaps as low as 2.6 eV. Incorporation of In into these nanotubes pushed the absorption even further into the visible. After decoration with Rh2-yCryO3 nanoparticle cocatalysts, (Ga1-xZnx)(N1-xOx) nanotubes spontaneously generated H2 in aqueous solutions under illumination. The photoanodic properties of these nanotubes are still under investigation. The significant reductions in thermal conductivity achieved using lead chalcogenide and In2-xGaxO3(ZnO) n nanowires highlight their use in thermoelectric power generation. The promise of 1-dimensional materials for energy conversion is further evident in the superior crystalline quality and high surface areas of the (Ga 1-xZnx)(N1-xOx) nanotubes. As research continues along these direction we move ever closer toward implementation of nanowires and nanotubes for clean, renewable, and more efficient energy use.

Optimized Characterization of Thermoelectric Generators for Automotive Application

NASA Astrophysics Data System (ADS)

Tatarinov, Dimitri; Wallig, Daniel; Bastian, Georg

2012-06-01

New developments in the field of thermoelectric materials bring the prospect of consumer devices for recovery of some of the waste heat from internal combustion engines closer to reality. Efficiency improvements are expected due to the development of high-temperature thermoelectric generators (TEG). In contrast to already established radioisotope thermoelectric generators, the temperature difference in automotive systems is not constant, and this imposes a set of specific requirements on the TEG system components. In particular, the behavior of the TEGs and interface materials used to link the heat flow from the heat source through the TEG to the heat sink must be examined. Due to the usage patterns of automobiles, the TEG will be subject to cyclic thermal loads, which leads to module degradation. Additionally, the automotive TEG will be exposed to an inhomogeneous temperature distribution, leading to inhomogeneous mechanical loads and reduced system efficiency. Therefore, a characterization rig is required to allow determination of the electrical, thermal, and mechanical properties of such high-temperature TEG systems. This paper describes a measurement setup using controlled adjustment of cold-side and warm-side temperatures as well as controlled feed-in of electrical power for evaluation of TEGs for application in vehicles with combustion engines. The temperature profile in the setup can be varied to simulate any vehicle usage pattern, such as the European standard driving cycle, allowing the power yield of the TEGs to be evaluated for the chosen cycle. The spatially resolved temperature distribution of a TEG system can be examined by thermal imaging. Hotspots or cracks on thermocouples of the TEGs and the thermal resistance of thermal interface materials can also be examined using this technology. The construction of the setup is briefly explained, followed by detailed discussion of the experimental results.

Elastic, Optoelectronic and Thermoelectric Properties of the Lead-Free Halide Semiconductors Cs2AgBi X 6 ( X = Cl, Br): Ab Initio Investigation

NASA Astrophysics Data System (ADS)

Guechi, N.; Bouhemadou, A.; Bin-Omran, S.; Bourzami, A.; Louail, L.

2018-02-01

We report a detailed investigation of the elastic moduli, electronic band structure, density of states, chemical bonding, electron and hole effective masses, optical response functions and thermoelectric properties of the lead-free halide double perovskites Cs2AgBiCl6 and Cs2AgBiBr6 using the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA-PBEsol) and the Tran-Blaha modified Becke-Johnson (TB-mBJ) potential. Because of the presence of heavy elements in the studied compounds, we include the spin-orbit coupling (SOC) effect. Our calculated structural parameters agree very well with the available experimental and theoretical findings. Single-crystal and polycrystalline elastic constants are predicted using the total-energy versus strain approach. Three-dimensional representations of the crystallographic direction dependence on the shear modulus, Young's modulus and Poisson's ratio demonstrate a noticeable elastic anisotropy. The TB-mBJ potential with SOC yields an indirect band gap of 2.44 (1.93) eV for Cs2AgBiCl6 (Cs2AgBiBr6), in good agreement with the existing experimental data. The chemical bonding features are probed via density of states and valence electron density distribution calculations. Optical response functions were predicted from the calculated band structure. Both of the investigated compounds have a significant absorption coefficient (˜ 25 × 104 {cm}^{ - 1} ) in the visible range of sunlight. The thermoelectric properties of the title compounds were investigated using the FP-LAPW approach in combination with the semi-classical Boltzmann transport theory. The Cs2AgBiCl6 and Cs2AgBiBr6 compounds have a large thermopower S, which makes them potential candidates for thermoelectric applications.

120. VIEW, LOOKING SOUTHEAST, OF TELLURIDE IRON WORKS RETORT USED ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

120. VIEW, LOOKING SOUTHEAST, OF TELLURIDE IRON WORKS RETORT USED FOR FLASHING MERCURY OFF OF GOLD TO CREATE SOFT INGOTS CALLED "SPONGES." AT RIGHT ARE SAFES FOR STORING 22-POUND SPONGES WORTH OVER $60,000 EACH, CA. 1985. - Shenandoah-Dives Mill, 135 County Road 2, Silverton, San Juan County, CO

6. Photocopied from unnumbered drawing, Drawings folder, Engineering Department, Utah ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

6. Photocopied from unnumbered drawing, Drawings folder, Engineering Department, Utah Power & Light Co., Salt Lake City, Utah. 'THE TELLURIDE POWER CO. LABORATORY EXTENSION. SOUTH ELEVATION. PROVO, UTAH. NOV. 9, 1909.' - Telluride Power Company, Nunn Hydroelectric Plant, Southeast side of Provo River, 300 feet West of US Route 189, Orem, Utah County, UT

Living with wildfire in Telluride Fire Protection District, Colorado

Treesearch

James R. Meldrum; Lilia C. Falk; Jamie Gomez; Christopher M. Barth; Hannah Brenkert-Smith; Travis Warziniack; Patricia A. Champ

2017-01-01

Residents in the wildland-urban interface can play an important role in reducing wildfires’ negative effects by performing wildfire risk mitigation on their properties. This report offers insight into the wildfire risk mitigation activities and related considerations such as attitudes, experiences, and concern about wildfire, for residents of the Telluride Fire...

Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

NASA Astrophysics Data System (ADS)

Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

2017-08-01

Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2.

PubMed

Ma, J; Delaire, O; May, A F; Carlton, C E; McGuire, M A; VanBebber, L H; Abernathy, D L; Ehlers, G; Hong, Tao; Huq, A; Tian, Wei; Keppens, V M; Shao-Horn, Y; Sales, B C

2013-06-01

Materials with very low thermal conductivity are of great interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising for suppressing thermal conductivity through phonon scattering, but challenges remain in producing bulk samples. In crystalline AgSbTe2 we show that a spontaneously forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mapping of the phonon mean free paths provides a novel bottom-up microscopic account of thermal conductivity and also reveals intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and suggests a new avenue for the nanoscale engineering of materials to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

Thermoelectric Energy Conversion: Future Directions and Technology Development Needs

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre

2007-01-01

This viewgraph presentation reviews the process of thermoelectric energy conversion along with key technology needs and challenges. The topics include: 1) The Case for Thermoelectrics; 2) Advances in Thermoelectrics: Investment Needed; 3) Current U.S. Investment (FY07); 4) Increasing Thermoelectric Materials Conversion Efficiency Key Science Needs and Challenges; 5) Developing Advanced TE Components & Systems Key Technology Needs and Challenges; 6) Thermoelectrics; 7) 200W Class Lightweight Portable Thermoelectric Generator; 8) Hybrid Absorption Cooling/TE Power Cogeneration System; 9) Major Opportunities in Energy Industry; 10) Automobile Waste Heat Recovery; 11) Thermoelectrics at JPL; 12) Recent Advances at JPL in Thermoelectric Converter Component Technologies; 13) Thermoelectrics Background on Power Generation and Cooling Operational Modes; 14) Thermoelectric Power Generation; and 15) Thermoelectric Cooling.

Camel-back band-induced power factor enhancement of thermoelectric lead-tellurium from Boltzmann transport calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, X. G., E-mail: wang2006@mail.ustc.edu.cn; Wang, L., E-mail: sqtb@mail.ustc.edu.cn; Liu, J., E-mail: jingliu@mail.ustc.edu.cn

2014-03-31

Band structures of PbTe can be abnormally bended via dual-doping on both the cationic and anionic sites to form camel-back multivalley energy band structures near the band edge. As a result, additional carrier pockets and strong intervalley scattering of carriers are introduced. Boltzmann transport calculations indicate that their contradictory effects yield remarkably enhanced power factor due to the improved thermopower and almost unchanged electrical conductivity in low temperature and high carrier concentration ranges. These findings prove dual-doping-induced band bending as an effective approach to improve the thermoelectric properties of PbTe and other similar materials.

Gigantic transverse voltage induced via off-diagonal thermoelectric effect in CaxCoO2 thin films

NASA Astrophysics Data System (ADS)

Takahashi, Kouhei; Kanno, Tsutomu; Sakai, Akihiro; Adachi, Hideaki; Yamada, Yuka

2010-07-01

Gigantic transverse voltages exceeding several tens volt have been observed in CaxCoO2 thin films with tilted c-axis orientation upon illumination of nanosecond laser pulses. The voltage signals were highly anisotropic within the film surface showing close relation with the c-axis tilt direction. The magnitude and the decay time of the voltage strongly depended on the film thickness. These results confirm that the large laser-induced voltage originates from a phenomenon termed the off-diagonal thermoelectric effect, by which a film out-of-plane temperature gradient leads to generation of a film in-plane voltage.

Structure and thermoelectric property of Te doped paracostibite CoSb1-xTexS compounds

NASA Astrophysics Data System (ADS)

You, Yonghui; Su, Xianli; Liu, Wei; Yan, Yonggao; Fu, Jiefei; Cheng, Xin; Zhang, Cheng; Tang, Xinfeng

2018-06-01

Paracostibite (CoSbS), a newly developed thermoelectric material, has aroused lots of interest due to its highly earth abundant and inexpensive constituent elements and potential application for thermoelectric power generation in the intermediate temperature range. Herein, a series of CoSb1-xTexS (x = 0-0.09) compounds were prepared by vacuum melting and annealing followed by SPS processing, and the effects of Te doping on the structure and thermoelectric properties were systematically investigated. Doping Te on the Sb site increases the carrier concentration up to 7.24 × 1020 cm-3 for CoSb0.93Te0.07S compound which is several orders of magnitude higher than that of un-doped CoSbS, and enhances the power factor. The maximum power factor of 14.07 μW cm-1 K-2 is attained at 900 K. Concomitantly, doping with Te on the Sb site leads to effective scattering of heat carrying phonon, accompanying with a strong suppression of the thermal conductivity with the increase of Te content, resulting in an increase of the ZT. A maximum ZT of 0.43 at 900 K is attained for CoSb0.93Te0.07S compound, which is 139% higher than that of un-doped CoSbS compound.

Using the 18-Electron Rule To Understand the Nominal 19-Electron Half-Heusler NbCoSb with Nb Vacancies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeier, Wolfgang G.; Anand, Shashwat; Huang, Lihong

The 18-electron rule is a widely used criterion in the search for new half-Heusler thermoelectric materials. However, several 19-electron compounds such as NbCoSb have been found to be stable and exhibit thermoelectric properties rivaling state-of-the art materials. Using synchrotron X-ray diffraction and density functional theory calculations, we show that samples with nominal (19-electron) composition NbCoSb actually contain a half-Heusler phase with composition Nb0.84CoSb. The large amount of stable Nb vacancies reduces the overall electron count, which brings the stoichiometry of the compound close to an 18-electron count, and stabilizes the material. Excess electrons beyond 18 electrons provide heavy doping neededmore » to make these good thermoelectric materials. This work demonstrates that considering possible defect chemistry and allowing small variation of electron counting leads to extra degrees of freedom for tailoring thermoelectric properties and exploring new compounds. Here we discuss the 18-electron rule as a guide to find defect-free half-Heusler semiconductors. Other electron counts such as 19-electron NbCoSb can also be expected to be stable as n-type metals, perhaps with cation vacancy defects to reduce the electron count.« less

Enhanced thermoelectric performance realized in AgBiS2 composited AgBiSe2 through indium doping and mechanical alloying

NASA Astrophysics Data System (ADS)

Guan, Yingdong; Huang, Yi; Wu, Di; Feng, Dan; He, Mingkai; He, Jiaqing

2018-05-01

AgBiSe2 is deemed as a decent candidate of state-of-arts thermoelectric lead chalcogenides due to its intrinsically low lattice thermal conductivity. In this work, we report that a peak figure of merit of ˜0.9 can be realized at 773 K in n-type AgBiSe2 when it is simultaneously doped with indium and composited with AgBiS2 through the ball milling process. The enhancement of thermoelectric performance of AgBiSe2 largely comes from the significant reduction of thermal conductivity from ˜0.5 W/mK to 0.33 W/mK at 773 K, which is the record low value ever reported in this specific system. The decrease in thermal conductivity can be ascribed to the combination of grain size reduction and enhanced alloy scattering from S-Se substitution during the high energy ball milling processes.

Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime

NASA Astrophysics Data System (ADS)

Liu, Huijun; Liang, Jinghua; Cheng, Long; Zhang, Jie; Zhang, Zhenyu

Using first-principles calculations and Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems. These findings help to establish intricate connections between the thermoelectric materials and topological insulators.

Scattering theory of nonlinear thermoelectricity in quantum coherent conductors.

PubMed

Meair, Jonathan; Jacquod, Philippe

2013-02-27

We construct a scattering theory of weakly nonlinear thermoelectric transport through sub-micron scale conductors. The theory incorporates the leading nonlinear contributions in temperature and voltage biases to the charge and heat currents. Because of the finite capacitances of sub-micron scale conducting circuits, fundamental conservation laws such as gauge invariance and current conservation require special care to be preserved. We do this by extending the approach of Christen and Büttiker (1996 Europhys. Lett. 35 523) to coupled charge and heat transport. In this way we write relations connecting nonlinear transport coefficients in a manner similar to Mott's relation between the linear thermopower and the linear conductance. We derive sum rules that nonlinear transport coefficients must satisfy to preserve gauge invariance and current conservation. We illustrate our theory by calculating the efficiency of heat engines and the coefficient of performance of thermoelectric refrigerators based on quantum point contacts and resonant tunneling barriers. We identify, in particular, rectification effects that increase device performance.

Co-precipitation synthesis of nanostructured Cu3SbSe4 and its Sn-doped sample with high thermoelectric performance.

PubMed

Li, Di; Li, Rui; Qin, Xiao-Ying; Song, Chun-Jun; Xin, Hong-Xing; Wang, Ling; Zhang, Jian; Guo, Guang-lei; Zou, Tian-Hua; Liu, Yong-Fei; Zhu, Xiao-Guang

2014-01-28

Large-scale fabrication of nanostructured Cu3SbSe4 and its Sn-doped sample Cu3Sb0.98Sn0.02Se4 through a low-temperature co-precipitation route is reported. The effects of hot-pressing temperatures, time and Sn doping on the thermoelectric properties of Cu3SbSe4 are explored. The maximum figure of merit ZTmax obtained here reaches 0.62 for the un-doped Cu3SbSe4, which is three times as large as that of Cu3SbSe4 synthesized by the fusion method. Due to the ameliorated power factor by optimized carrier concentration and the reduced lattice thermal conductivity by enhanced phonon scattering at grain interfaces, Sn doping leads to an improvement of thermoelectric performance as compared to Cu3SbSe4. The maximum ZT for Cu3Sb0.98Sn0.02Se4 is 1.05 in this work, which is 50% larger than the largest value reported.

Ba6-3 x Nd8+2 x Ti18O54 Tungsten Bronze: A New High-Temperature n-Type Oxide Thermoelectric

NASA Astrophysics Data System (ADS)

Azough, Feridoon; Freer, Robert; Yeandel, Stephen R.; Baran, Jakub D.; Molinari, Marco; Parker, Stephen C.; Guilmeau, Emmanuel; Kepaptsoglou, Demie; Ramasse, Quentin; Knox, Andy; Gregory, Duncan; Paul, Douglas; Paul, Manosh; Montecucco, Andrea; Siviter, Jonathan; Mullen, Paul; Li, Wenguan; Han, Guang; Man, Elena A.; Baig, Hasan; Mallick, Tapas; Sellami, Nazmi; Min, Gao; Sweet, Tracy

2016-03-01

Semiconducting Ba6-3 x Nd8+2 x Ti18O54 ceramics (with x = 0.00 to 0.85) were synthesized by the mixed oxide route followed by annealing in a reducing atmosphere; their high-temperature thermoelectric properties have been investigated. In conjunction with the experimental observations, atomistic simulations have been performed to investigate the anisotropic behavior of the lattice thermal conductivity. The ceramics show promising n-type thermoelectric properties with relatively high Seebeck coefficient, moderate electrical conductivity, and temperature-stable, low thermal conductivity; For example, the composition with x = 0.27 (i.e., Ba5.19Nd8.54Ti18O54) exhibited a Seebeck coefficient of S 1000K = 210 µV/K, electrical conductivity of σ 1000K = 60 S/cm, and thermal conductivity of k 1000K = 1.45 W/(m K), leading to a ZT value of 0.16 at 1000 K.

5. Photocopied from drawing 70, Nunns Station Folder, Engineering Department, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. Photocopied from drawing 70, Nunns Station Folder, Engineering Department, Utah Power & Light Co., Salt Lake City, Utah. 'TILE TELLURIDE POWER TRANSMISSION CO. POWER HOUSE IN PROVO CANYON, PROVO, UTAH' SECTION, c. 1900. - Telluride Power Company, Nunn Hydroelectric Plant, Southeast side of Provo River, 300 feet West of US Route 189, Orem, Utah County, UT

Growth of Cadmium-Zinc Telluride Crystals by Controlled Seeding Contactless Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Palosz, W.; Grasza, K.; Gillies, D.; Jerman, G.

1996-01-01

Bulk crystals of cadmium-zinc telluride, 23 mm in diameter and up to 45 grams in weight were grown. Controlled seed formation procedure was used to limit the number of grains in the crystal. Most uniform distribution of ZnTe in the crystals was obtained using excess (Cd + Zn) pressure in the ampoule.

Laser space communication experiment: Modulator technology

NASA Technical Reports Server (NTRS)

Goodwin, F. E.

1973-01-01

Results are presented of a contractual program to develop the modulator technology necessary for a 10.6 micron laser communication system using cadmium telluride as the modulator material. The program consisted of the following tasks: (1) The growth of cadmium telluride crystals of sufficient size and purity and with the necessary optical properties for use as laser modulator rods. (2) Develop a low loss antireflection coating for the cadmium telluride rods. (3) Design and build a modulator capable of 300 MHz modulation. (4) Develop a modulator driver capable of a data rate of 300 MBits/sec, 12 W rms output power, and 40 percent efficiency. (5) Assemble and test the modulator system. All design goals were met and the system was built and tested.

Rare earth-doped materials with enhanced thermoelectric figure of merit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venkatasubramanian, Rama; Cook, Bruce Allen; Levin, Evgenii M.

A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one ofmore » the p-type thermoelectric material or the n-type thermoelectric material.« less

Precision timing detectors with cadmium-telluride sensor

NASA Astrophysics Data System (ADS)

Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

2017-09-01

Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

A lightweight scalable agarose-gel-synthesized thermoelectric composite

NASA Astrophysics Data System (ADS)

Kim, Jin Ho; Fernandes, Gustavo E.; Lee, Do-Joong; Hirst, Elizabeth S.; Osgood, Richard M., III; Xu, Jimmy

2018-03-01

Electronic devices are now advancing beyond classical, rigid systems and moving into lighweight flexible regimes, enabling new applications such as body-wearables and ‘e-textiles’. To support this new electronic platform, composite materials that are highly conductive yet scalable, flexible, and wearable are needed. Materials with high electrical conductivity often have poor thermoelectric properties because their thermal transport is made greater by the same factors as their electronic conductivity. We demonstrate, in proof-of-principle experiments, that a novel binary composite can disrupt thermal (phononic) transport, while maintaining high electrical conductivity, thus yielding promising thermoelectric properties. Highly conductive Multi-Wall Carbon Nanotube (MWCNT) composites are combined with a low-band gap semiconductor, PbS. The work functions of the two materials are closely matched, minimizing the electrical contact resistance within the composite. Disparities in the speed of sound in MWCNTs and PbS help to inhibit phonon propagation, and boundary layer scattering at interfaces between these two materials lead to large Seebeck coefficient (> 150 μV/K) (Mott N F and Davis E A 1971 Electronic Processes in Non-crystalline Materials (Oxford: Clarendon), p 47) and a power factor as high as 10 μW/(K2 m). The overall fabrication process is not only scalable but also conformal and compatible with large-area flexible hosts including metal sheets, films, coatings, possibly arrays of fibers, textiles and fabrics. We explain the behavior of this novel thermoelectric material platform in terms of differing length scales for electrical conductivity and phononic heat transfer, and explore new material configurations for potentially lightweight and flexible thermoelectric devices that could be networked in a textile.

Electronic Transport Properties of Bismuth Microwire Arrays

NASA Astrophysics Data System (ADS)

Solomon, S.; Huber, T. E.; Bouffard, M.; Graf, M. J.

2002-03-01

Bulk Bi, a semimetal, and Bi-Sb, have the highest thermoelectric figure of merit Z at 100 K. The thermoelectric properties of these materials are strongly anisotropic. The best thermoelectric performance is observed when the electrical current flows along the trigonal axis. However, Bi single crystals are easily cleaved along the trigonal planes. This lack of strength has largely prevented the use of these materials in practical thermoelectric coolers. Composite technology offers the opportunity to increase the toughness of Bi and Bi-Sb. Also, microengineering Bi into composites may lead to a significant improvement in their thermoelectric performance, because of the reduction of phonon conductivity from phonon scattering at the grain boundaries and interfaces. X-ray diffraction studies show that the microwires in the array are highly oriented along the crystal direction normal to the (003) lattice plane of the rombohedral crystal structure of Bi . Measurements of the resistance of arrays of 3 mm and 10 mm diameter wires have been carried out over a wide range of temperatures (1.8 K 300 K) and magnetic fields (0-8 T), and orientations of the sample with respect to the magnetic field (0-90o) which includes the magnetic and transverse orientation. The zero field resistivity was studied and it was found that, at low temperatures, the wire boundary scattering is the dominant process. The longitudinal magnetoresistance is negative, in contrast to the longitudinal magnetoresistance of bulk crystals oriented in direction perpendicular to the trigonal plane of the rhombohedral crystal lattice who exhibit negligible magnetoresistance. This results are interpreted in terms of a size effect. Research supported by NASA and NSF.

Development of thermoelectric fibers for miniature thermoelectric devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fei; Menchhofer, Paul A.; Kiggans, Jr., James O.

Miniature thermoelectric (TE) devices may be used in a variety of applications such as power sources of small sensors, temperature regulation of precision electronics, etc. Reducing the size of TE elements may also enable design of novel devices with unique form factor and higher device efficiency. Current industrial practice of fabricating TE devices usually involves mechanical removal processes that not only lead to material loss but also limit the geometry of the TE elements. In this project, we explored a powder-processing method for the fabrication of TE fibers with large length-to-area ratio, which could be potentially used for miniature TEmore » devices. Powders were milled from Bi2Te3-based bulk materials and then mixed with a thermoplastic resin dissolved in an organic solvent. Through an extrusion process, flexible, continuous fibers with sub-millimeter diameters were formed. The polymer phase was then removed by sintering. Sintered fibers exhibited similar Seebeck coefficients to the bulk materials. Moreover, their electrical resistivity was much higher, which might be related to the residual porosity and grain boundary contamination. Prototype miniature uni-couples fabricated from these fibers showed a linear I-V behavior and could generate millivolt voltages and output power in the nano-watt range. Further development of these TE fibers requires improvement in their electrical conductivities, which needs a better understanding of the causes that lead to the low conductivity in the sintered fibers.« less

Thermoelectric Properties of Pulsed Electric Current Sintered Samples of AgPb m SbSe17 ( m = 16 or 17)

NASA Astrophysics Data System (ADS)

Wu, Chun-I.; Todorov, Ilyia; Kanatzidis, Mercouri G.; Timm, Edward; Case, Eldon D.; Schock, Harold; Hogan, Timothy P.

2012-06-01

Lead chalcogenide materials have drawn attention in recent years because of their outstanding thermoelectric properties. Bulk n-type materials of AgPb m SbTe2+ m have been reported to exhibit high figure of merit, ZT, as high as 1.7 at 700 K. Recent reports have shown p-type lead selenide-based compounds with comparable ZT. The analogous material AgPb m SbSe17 shares a similar cubic rock-salt structure with PbTe-based compounds; however, it exhibits a higher melting point, and selenium is more abundant than tellurium. Using solid solution chemistry, we have fabricated cast AgPb15SbSe17 samples that show a peak power factor of approximately 17 μW/cm K2 at 450 K. Increasing the strength of such materials is commonly achieved through powder processing, which also helps to homogenize the source materials. Pulsed electric current sintering (PECS) is a hot-pressing technique that utilizes electric current through the die and sample for direct Joule heating during pressing. The mechanisms present during PECS processing have captured significant research interest and have led to some notable improvements in sample properties compared with other densification techniques. We report the thermoelectric properties of PECS samples of AgPb m SbSe17 along with sample fabrication and processing details.

Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

DOE PAGES

Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; ...

2015-11-03

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

Thermal and thermoelectric transport in nanoscale systems

NASA Astrophysics Data System (ADS)

Murphy, Padraig Gerard

This thesis deals with transport in molecular junctions and nanowires. We show that a molecular junction can give large values of the thermoelectric figure of merit ZT, and so could be used as a solid state energy conversion device that operates close to the Carnot efficiency. The mechanism is similar to the Mahan-Sofo model for bulk thermoelectrics---the Lorenz ratio goes to zero, violating the Wiedemann-Franz law, while the thermopower remains non-zero. The molecular state through which charge is transported must be weakly coupled to the leads, and the energy level of the state must be of order kBT away from the Fermi energy of the leads. In practice, the figure of merit is limited by the phonon thermal conductance; we show that the largest possible ZT-G˜ph th-1/2 , where G˜phth is the phonon thermal conductance divided by the thermal conductance quantum. The thermal conductance by phonons of a quasi-one-dimensional solid with isotope or defect scattering is studied using the Landauer formalism for thermal transport. A scalable numerical transfer-matrix technique is developed and applied to model quasi-one-dimensional systems in order to confirm simple analytic predictions. We argue that existing thermal conductivity data on semiconductor nanowires, showing an unexpected linear temperature dependence, can be understood through a model that combines incoherent surface scattering for short-wavelength phonons with nearly ballistic long-wavelength phonons.

Development of thermoelectric fibers for miniature thermoelectric devices

DOE PAGES

Ren, Fei; Menchhofer, Paul A.; Kiggans, Jr., James O.; ...

2016-09-23

Miniature thermoelectric (TE) devices may be used in a variety of applications such as power sources of small sensors, temperature regulation of precision electronics, etc. Reducing the size of TE elements may also enable design of novel devices with unique form factor and higher device efficiency. Current industrial practice of fabricating TE devices usually involves mechanical removal processes that not only lead to material loss but also limit the geometry of the TE elements. In this project, we explored a powder-processing method for the fabrication of TE fibers with large length-to-area ratio, which could be potentially used for miniature TEmore » devices. Powders were milled from Bi2Te3-based bulk materials and then mixed with a thermoplastic resin dissolved in an organic solvent. Through an extrusion process, flexible, continuous fibers with sub-millimeter diameters were formed. The polymer phase was then removed by sintering. Sintered fibers exhibited similar Seebeck coefficients to the bulk materials. Moreover, their electrical resistivity was much higher, which might be related to the residual porosity and grain boundary contamination. Prototype miniature uni-couples fabricated from these fibers showed a linear I-V behavior and could generate millivolt voltages and output power in the nano-watt range. Further development of these TE fibers requires improvement in their electrical conductivities, which needs a better understanding of the causes that lead to the low conductivity in the sintered fibers.« less

Direct determination of glucose, lactate and triglycerides in blood serum by a tunable quantum cascade laser-based mid-IR sensor

NASA Astrophysics Data System (ADS)

Brandstetter, M.; Volgger, L.; Genner, A.; Jungbauer, C.; Lendl, B.

2013-02-01

This work reports on a compact sensor for fast and reagent-free point-of-care determination of glucose, lactate and triglycerides in blood serum based on a tunable (1030-1230 cm-1) external-cavity quantum cascade laser (EC-QCL). For simple and robust operation a single beam set-up was designed and only thermoelectric cooling was used for the employed laser and detector. Full computer control of analysis including liquid handling and data analysis facilitated routine measurements. A high optical pathlength (>100 μm) is a prerequisite for robust measurements in clinical practice. Hence, the optimum optical pathlength for transmission measurements in aqueous solution was considered in theory and experiment. The experimentally determined maximum signal-to-noise ratio (SNR) was around 140 μm for the QCL blood sensor and around 50 μm for a standard FT-IR spectrometer employing a liquid nitrogen cooled mercury cadmium telluride (MCT) detector. A single absorption spectrum was used to calculate the analyte concentrations simultaneously by using a partial-least-squares (PLS) regression analysis. Glucose was determined in blood serum with a prediction error (RMSEP) of 6.9 mg/dl and triglycerides with an error of cross-validation (RMSECV) of 17.5 mg/dl in a set of 42 different patients. In spiked serum samples the lactate concentration could be determined with an RMSECV of 8.9 mg/dl.

University of Virginia infrared sensor experiment (UVIRSE)

NASA Astrophysics Data System (ADS)

Dawson, Jeffrey R.; Bell, Meredith A.; Powers, Michael C.; Laufer, Gabriel

2001-03-01

A suite consisting of an infrared sensor, optical sensors and a video camera are prepared for launch by a group of students at University of Virginia (UVA) and James Madison University (JMU). The sensors are a first step in the development of a Gas Filter Correlation Radiometer (GFCR) that will detect stratospheric methane (CH4) when flown on sub-orbital sounding rockets and/or from the hypersonic X-34 reusable launch vehicle. The current payload has a threefold purpose: (a) to provide space heritage to a thermoelectrically cooled mercury cadmium telluride sensor, (b) to demonstrate methods for correlating the IR reading of the sensor with ground topography, and (c) to flight test all the payload components that will become part of the sub- orbital methane GFCR sensor. Once completed the system will serve as host to other undergraduate research design projects that require space environment, microgravity, or remote sensing capabilities. The payload components have been received and tested, and the supporting structure has been designed and built. Data from previous rocket flights was used to analyze the environmental strains placed on the experiment and components. Payload components are being integrated and tested as a system to ensure functionality in the flight environment. This includes thermal testing for individual components, vibration testing from individual components and overall payload, and load testing of the external structure. Launch is scheduled for Spring 2001.

ACCEPTOR DOPANTS FOR LEAD TELLURIDE

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCaldin, J.O.

1961-12-01

Alternative P-type dopants such as, Th, P, and As were studied. Ingots were grown from a melt containing one at.% dopant and their electrical properties evaluated. Also, sintered pellets of PbTe were doped by exposure at high temperature to gaseous dopants. In most cases, the doping concentrations obtained were insufficient for SNAP 10A requirements. In the case of As, however, doping of Te-rich PbTe, the desired heavy doping was obtained. These preliminary studies suggest that dopants other than Na might be suitable for SNAP 10A requirements. (auth)

Development of Thermoelectric Power Generation and Peltier Cooling Properties of Materials for Thermoelectric Cryocooling Devices

DTIC Science & Technology

2015-05-12

method. AAMU would like to continue, given future research funding, with our new design for the thermoelectric and photovoltaic systems and hybrid...nanofabrication to develop nanostructured thermoelectric (TE) materials for application in high-efficiency thermoelectric power generators and solid...Distribution Unlimited Final Report: Development of Thermoelectric Power Generation and Peltier Cooling Properties of Materials for Thermoelectric

A 3D TCAD simulation of a thermoelectric module configured for thermoelectric power generation, cooling and heating

NASA Astrophysics Data System (ADS)

Gould, C. A.; Shammas, N. Y. A.; Grainger, S.; Taylor, I.; Simpson, K.

2012-06-01

This paper documents the 3D modeling and simulation of a three couple thermoelectric module using the Synopsys Technology Computer Aided Design (TCAD) semiconductor simulation software. Simulation results are presented for thermoelectric power generation, cooling and heating, and successfully demonstrate the basic thermoelectric principles. The 3D TCAD simulation model of a three couple thermoelectric module can be used in the future to evaluate different thermoelectric materials, device structures, and improve the efficiency and performance of thermoelectric modules.

Preparation and characterization of copper telluride thin films by modified chemical bath deposition (M-CBD) method

NASA Astrophysics Data System (ADS)

Pathan, H. M.; Lokhande, C. D.; Amalnerkar, D. P.; Seth, T.

2003-09-01

Copper telluride thin films were deposited using modified chemical method using copper(II) sulphate; pentahydrate [CuSO 4·5H 2O] and sodium tellurite [Na 2TeO 3] as cationic and anionic sources, respectively. Modified chemical method is based on the immersion of the substrate into separately placed cationic and anionic precursors. The preparative conditions such as concentration, pH, immersion time, immersion cycles, etc. were optimized to get good quality copper telluride thin films at room temperature. The films have been characterized for structural, compositional, optical and electrical transport properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Rutherford back scattering (RBS), optical absorption/transmission, electrical resistivity and thermoemf measurement techniques.

Ternary eutectic growth of nanostructured thermoelectric Ag-Pb-Te materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Hsin-jay; Chen, Sinn-wen; Foo, Wei-jian

2012-07-09

Nanostructured Ag-Pb-Te thermoelectric materials were fabricated by unidirectionally solidifying the ternary Ag-Pb-Te eutectic and near-eutectic alloys using the Bridgeman method. Specially, the Bridgman-grown eutectic alloy exhibited a partially aligned lamellar microstructure, which consisted of Ag{sub 5}Te{sub 3} and Te phases, with additional 200-600 nm size particles of PbTe. The self-assembled interfaces altered the thermal and electronic transport properties in the bulk Ag-Pb-Te eutectic alloy. Presumably due to phonon scattering from the nanoscale microstructure, a low thermal conductivity ({kappa} = 0.3 W/mK) was achieved of the eutectic alloy, leading to a zT peak of 0.41 at 400 K.

Electric resistivity and thermoelectricity of Ni-Nb-Zr and Ni-Nb-Zr-H glassy alloys

NASA Astrophysics Data System (ADS)

Fukuhara, Mikio; Inoue, Akihisa

2010-09-01

Electric resistivity ρ and thermoelectric power S of Ni 36Nb 24Zr 40 and (Ni 0.36Nb 0.24Zr 0.4) 90H 10 glassy alloys were investigated in temperature region between 1.5 and 300 K. After resistivity curves of both alloys increase gradually with decreasing temperature down to around 6 K, they dropped suddenly and then reached zero resistivity at 2.1 K, leading to superconductivity. Linear curve with negative TCR of ρ vs T2 and slight increase of S/ T in temperature region down to around 6 K clearly reveal Fermi-liquid phenomenon in electronic state for both alloys independent of hydrogen content.

Pbte Nanostructures for Spin Filtering and Detecting

NASA Astrophysics Data System (ADS)

Grabecki, G.

2005-08-01

An uniqueness of lead telluride PbTe relies on combination of excellent semiconducting properties, like high electron mobility and tunable carrier concentration, with paraelectric behavior leading to huge dielectric constant at low temperatures. The present article is a review of our experimental works performed on PbTe nanostructures. The main result is observation of one-dimensional quantization of the electron motion at much impure conditions than in any other system studied so far. We explain this in terms of dielectric screening of Coulomb potentials produced by charged defects. Furthermore, in an external magnetic field, the conductance quantization steps show very pronounced spin splitting, already visible at several kilogauss. This indicates that PbTe nanostructures have a potential as local spin filtering devices.

Hierarchical thermoelectrics: crystal grain boundaries as scalable phonon scatterers

NASA Astrophysics Data System (ADS)

Selli, Daniele; Boulfelfel, Salah Eddine; Schapotschnikow, Philipp; Donadio, Davide; Leoni, Stefano

2016-02-01

Thermoelectric materials are strategically valuable for sustainable development, as they allow for the generation of electrical energy from wasted heat. In recent years several strategies have demonstrated some efficiency in improving thermoelectric properties. Dopants affect carrier concentration, while thermal conductivity can be influenced by alloying and nanostructuring. Features at the nanoscale positively contribute to scattering phonons, however those with long mean free paths remain difficult to alter. Here we use the concept of hierarchical nano-grains to demonstrate thermal conductivity reduction in rocksalt lead chalcogenides. We demonstrate that grains can be obtained by taking advantage of the reconstructions along the phase transition path that connects the rocksalt structure to its high-pressure form. Since grain features naturally change as a function of size, they impact thermal conductivity over different length scales. To understand this effect we use a combination of advanced molecular dynamics techniques to engineer grains and to evaluate thermal conductivity in PbSe. By affecting grain morphologies only, i.e. at constant chemistry, two distinct effects emerge: the lattice thermal conductivity is significantly lowered with respect to the perfect crystal, and its temperature dependence is markedly suppressed. This is due to an increased scattering of low-frequency phonons by grain boundaries over different size scales. Along this line we propose a viable process to produce hierarchical thermoelectric materials by applying pressure via a mechanical load or a shockwave as a novel paradigm for material design.

Electrical conductivity and thermoelectric power of La1- x Li x CoO3-δ (0 ≤ x ≤ 0.1) oxides

NASA Astrophysics Data System (ADS)

Vecherskii, S. I.; Konopel'ko, M. A.; Batalov, N. N.; Antonov, B. D.; Reznitskikh, O. G.; Yaroslavtseva, T. V.

2016-12-01

The influence of the concentration of lithium ions on the phase composition, the electrical conductivity, and the thermoelectric power of La1- x Li x CoO3-δ (0 ≤ x ≤ 0.1) oxides synthesized by the ceramic method has been investigated. It has been found that the region of the existence of perovskite-type La1- x Li x CoO3-δ solid solutions does not exceed x = 0.05. The doping with lithium leads to an increase in the electrical conductivity of single-phase samples in comparison with that of the LaCoO3 compound. As the temperature increases from 300 to 400 K, the thermoelectric power of the LaCoO3 compound increases from the negative to positive values and then decreases, but remains positive in the temperature range from 400 to 1020 K. The thermoelectric power of the other samples has a positive sign. The results obtained have been discussed based on the models of the electron density of states in LaCoO3 and La1- x Sr x CoO3-δ, proposed in the studies of Señarís-Rodríguez and Goodenough, as well as in the framework of the theory of non-crystalline materials, developed by Mott.

Synthetic thermoelectric materials comprising phononic crystals

DOEpatents

El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

2013-08-13

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madar, Naor; Givon, Tom; Mogilyansky, Dmitry

2016-07-21

In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressivemore » maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.« less

Tuning the Thermoelectric Properties of a Conducting Polymer through Blending with Open-Shell Molecular Dopants.

PubMed

Tomlinson, Edward P; Willmore, Matthew J; Zhu, Xiaoqin; Hilsmier, Stuart W A; Boudouris, Bryan W

2015-08-26

Polymer thermoelectric devices are emerging as promising platforms by which to convert thermal gradients into electricity directly, and poly(3,4-ethylene dioxythiophene) doped with poly(styrenesulfonate) ( PSS) is a leading candidate in a number of these thermoelectric modules. Here, we implement the stable radical-bearing small molecule 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO-OH) as an intermolecular dopant in order to tune the electrical conductivity, thermopower, and power factor of PSS thin films. Specifically, we demonstrate that, at moderate loadings (∼2%, by weight) of the open-shell TEMPO-OH molecule, the thermopower of PSS thin films is increased without a marked decline in the electrical conductivity of the material. This effect, in turn, allows for an optimization of the power factor in the composite organic materials, which is a factor of 2 greater than the pristine PSS thin films. Furthermore, because the loading of TEMPO-OH is relatively low, we observe that there is little change in either the crystalline nature or surface topography of the composite films relative to the pristine PSS films. Instead, we determine that the increase in the thermopower is due to the presence of stable radical sites within the PSS that persist despite the highly acidic environment that occurs due to the presence of the poly(styrenesulfonate) moiety. Additionally, the oxidation-reduction-active (redox-active) nature of the TEMPO-OH small molecules provides a means by which to filter charges of different energy values. Therefore, these results demonstrate that a synergistic combination of an open-shell species and a conjugated polymer allows for enhanced thermoelectric properties in macromolecular systems, and as such, it offers the promise of a new design pathway in polymer thermoelectric materials.

Design of n - and p -type oxide thermoelectrics in LaNiO3/SrTiO3(001 ) superlattices exploiting interface polarity

NASA Astrophysics Data System (ADS)

Geisler, Benjamin; Blanca-Romero, Ariadna; Pentcheva, Rossitza

2017-03-01

We investigate the structural, electronic, transport, and thermoelectric properties of LaNiO3/SrTiO3(001 ) superlattices containing either exclusively n - or p -type interfaces or coupled interfaces of opposite polarity by using density functional theory calculations with an on-site Coulomb repulsion term. The results show that significant octahedral tilts are induced in the SrTiO3 part of the superlattice. Moreover, the La-Sr distances and Ni-O out-of-plane bond lengths at the interfaces exhibit a distinct variation by about 7 % with the sign of the electrostatic doping. In contrast to the much studied LaAlO3/SrTiO3 system, the charge mismatch at the interfaces is exclusively accommodated within the LaNiO3 layers, whereas the interface polarity leads to a band offset and to the formation of an electric field within the coupled superlattice. Features of the electronic structure indicate an orbital-selective quantization of quantum well states. The potential- and confinement-induced multiband splitting results in complex cylindrical Fermi surfaces with a tendency towards nesting that depends on the interface polarity. The analysis of the thermoelectric response reveals a particularly large positive Seebeck coefficient (135 μ V /K) and a high figure of merit (0.35) for room-temperature cross-plane transport in the p -type superlattice that is attributed to the participation of the SrTiO3 valence band. Superlattices with either n - or p -type interfaces show cross-plane Seebeck coefficients of opposite sign and thus emerge as a platform to construct an oxide-based thermoelectric generator with structurally and electronically compatible n - and p -type oxide thermoelectrics.

High Power Factor and Enhanced Thermoelectric Performance of SnTe-AgInTe2: Synergistic Effect of Resonance Level and Valence Band Convergence.

PubMed

Banik, Ananya; Shenoy, U Sandhya; Saha, Sujoy; Waghmare, Umesh V; Biswas, Kanishka

2016-10-05

Understanding the basis of electronic transport and developing ideas to improve thermoelectric power factor are essential for production of efficient thermoelectric materials. Here, we report a significantly large thermoelectric power factor of ∼31.4 μW/cm·K 2 at 856 K in Ag and In co-doped SnTe (i.e., SnAg x In x Te 1+2x ). This is the highest power factor so far reported for SnTe-based material, which arises from the synergistic effects of Ag and In on the electronic structure and the improved electrical transport properties of SnTe. In and Ag play different but complementary roles in modifying the valence band structure of SnTe. In-doping introduces resonance levels inside the valence bands, leading to a significant improvement in the Seebeck coefficient at room temperature. On the other hand, Ag-doping reduces the energy separation between light- and heavy-hole valence bands by widening the principal band gap, which also results in an improved Seebeck coefficient. Additionally, Ag-doping in SnTe enhances the p-type carrier mobility. Co-doping of In and Ag in SnTe yields synergistically enhanced Seebeck coefficient and power factor over a broad temperature range because of the synergy of the introduction of resonance states and convergence of valence bands, which have been confirmed by first-principles density functional theory-based electronic structure calculations. As a consequence, we have achieved an improved thermoelectric figure of merit, zT ≈ 1, in SnAg 0.025 In 0.025 Te 1.05 at 856 K.

Half-heusler alloys with enhanced figure of merit and methods of making

DOEpatents

Ren, Zhifeng; Yan, Xiao; Joshi, Giri; Chen, Shuo; Chen, Gang; Poudel, Bed; Caylor, James Christopher

2015-06-02

Thermoelectric materials and methods of making thermoelectric materials having a nanometer mean grain size less than 1 micron. The method includes combining and arc melting constituent elements of the thermoelectric material to form a liquid alloy of the thermoelectric material and casting the liquid alloy of the thermoelectric material to form a solid casting of the thermoelectric material. The method also includes ball milling the solid casting of the thermoelectric material into nanometer mean size particles and sintering the nanometer size particles to form the thermoelectric material having nanometer scale mean grain size.

Thermoelectric materials having porosity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heremans, Joseph P.; Jaworski, Christopher M.; Jovovic, Vladimir

A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi.sub.1-xSb.sub.x).sub.u(Te.sub.1-ySe.sub.y).sub.w, wherein 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 1.8.ltoreq.u.ltoreq.2.2, 2.8.ltoreq.w.ltoreq.3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments,more » the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.« less

Pressure induced structural transitions in Lead Chalcogenides and its influence on thermoelectric properties

NASA Astrophysics Data System (ADS)

Petersen, John; Spinks, Michael; Borges, Pablo; Scolfaro, Luisa

2012-03-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric (TE) properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity, with a possible application being in engine exhaust. Here, we examine the effects of altering the lattice parameter on total ground state energy and the band gap using first principles calculations performed within Density Functional Theory and the Projector Augmented Wave approach and the Vienna Ab-initio Simulation Package (VASP-PAW) code. Both PbTe and PbSe, in NaCl, orthorhombic, and CsCl structures are considered. It is found that altering the lattice parameter, which is analogous to applying external pressure on the material experimentally, has notable effects on both ground state energy and the band gap. The implications of this behavior in the TE properties of these materials are analyzed.

Orbitally-driven giant phonon anharmonicity in SnSe

DOE PAGES

Li, Chen W.; Hong, Jiawang; May, Andrew F.; ...

2015-10-19

We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. Wemore » show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.« less

Orbitally driven giant phonon anharmonicity in SnSe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, C. W.; Hong, J.; May, A. F.

Understanding elementary excitations and their couplings in condensed matter systems is critical for developing better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The current record material for thermoelectric conversion efficiency, SnSe, has an ultralow thermal conductivity, but the mechanism behind the strong phonon scattering remains largely unknown. From inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and found the origin of the ionic-potential anharmonicity responsible for the unique properties of SnSe. We show that themore » giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. The present results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers new insights on how electron–phonon and phonon–phonon interactions may lead to the realization of ultralow thermal conductivity.« less

Chemically Tunable Full Spectrum Optical Properties of 2D Silicon Telluride Nanoplates.

PubMed

Wang, Mengjing; Lahti, Gabriella; Williams, David; Koski, Kristie J

2018-06-07

Silicon telluride (Si 2 Te 3 ) is a two-dimensional, layered, p-type semiconductor that shows broad near-infrared photoluminescence. We show how, through various means of chemical modification, Si 2 Te 3 can have its optoelectronic properties modified in several independent ways without fundamentally altering the host crystalline lattice. Substitutional doping with Ge strongly redshifts the photoluminescence while substantially lowering the direct and indirect band gaps and altering the optical phonon modes. Intercalation with Ge introduces a sharp 4.3 eV ultraviolet resonance and shifts the bulk plasmon even while leaving the infrared response and band gaps virtually unchanged. Intercalation with copper strengthens the photoluminescence without altering its spectral shape. Thus silicon telluride is shown to be a chemically tunable platform of full spectrum optical properties promising for opto-electronic applications.

Promising ferroelectricity in 2D group IV tellurides: a first-principles study

NASA Astrophysics Data System (ADS)

Wan, Wenhui; Liu, Chang; Xiao, Wende; Yao, Yugui

2017-09-01

Based on the first-principles calculations, we investigated the ferroelectric properties of two-dimensional (2D) Group-IV tellurides XTe (X = Si, Ge, and Sn), with a focus on GeTe. 2D Group-IV tellurides energetically prefer an orthorhombic phase with a hinge-like structure and an in-plane spontaneous polarization. The intrinsic Curie temperature Tc of monolayer GeTe is as high as 570 K and can be raised quickly by applying a tensile strain. An out-of-plane electric field can effectively decrease the coercive field for the reversal of polarization, extending its potential for regulating the polarization switching kinetics. Moreover, for bilayer GeTe, the ferroelectric phase is still the ground state. Combined with these advantages, 2D GeTe is a promising candidate material for practical integrated ferroelectric applications.

The Cadmium Zinc Telluride Imager on AstroSat

NASA Astrophysics Data System (ADS)

Bhalerao, V.; Bhattacharya, D.; Vibhute, A.; Pawar, P.; Rao, A. R.; Hingar, M. K.; Khanna, Rakesh; Kutty, A. P. K.; Malkar, J. P.; Patil, M. H.; Arora, Y. K.; Sinha, S.; Priya, P.; Samuel, Essy; Sreekumar, S.; Vinod, P.; Mithun, N. P. S.; Vadawale, S. V.; Vagshette, N.; Navalgund, K. H.; Sarma, K. S.; Pandiyan, R.; Seetha, S.; Subbarao, K.

2017-06-01

The Cadmium Zinc Telluride Imager (CZTI) is a high energy, wide-field imaging instrument on AstroSat. CZTI's namesake Cadmium Zinc Telluride detectors cover an energy range from 20 keV to >200 keV, with 11% energy resolution at 60 keV. The coded aperture mask attains an angular resolution of 17^' over a 4.6° × 4.6° (FWHM) field-of-view. CZTI functions as an open detector above 100 keV, continuously sensitive to GRBs and other transients in about 30% of the sky. The pixellated detectors are sensitive to polarization above ˜ 100 keV, with exciting possibilities for polarization studies of transients and bright persistent sources. In this paper, we provide details of the complete CZTI instrument, detectors, coded aperture mask, mechanical and electronic configuration, as well as data and products.

Enhancing Thermoelectric Performance of PbSe by Se Vacancies

NASA Astrophysics Data System (ADS)

Liu, Yefeng; You, Li; Wang, Chenyang; Zhang, Jiye; Yang, Jiong; Guo, Kai; Luo, Jun; Zhang, Wenqing

2018-02-01

Self-doped n-type PbSe1-δ thermoelectric compounds have been successfully synthesized by the melting and annealing method. The Se vacancies are created by intentionally produced deficiency of Se elements during the sample preparation. Such intrinsic doping can raise the electron concentration to a value as high as 1.2 × 1019 cm-3, leading to greatly improved electrical conductivity and power factor in the n-type PbSe1-δ . Furthermore, the presence of Se vacancies effectively enhances the phonon scattering, resulting in reduced lattice thermal conductivity. Thus, the thermoelectric performance of n-type PbSe1-δ is significantly improved by the formation of intrinsic Se vacancies. The achieved ZT value for the Se-vacancy-rich sample varies from ˜ 0.4 at 330 K to ˜ 1.0 at 675 K, which is comparable to those of the reported n-type PbSe materials with extrinsic doping. In addition, the average ZT of our n-type PbSe system reaches 0.77, which approaches the value of p-type PbTe.

Effect of electron-vibration interactions on the thermoelectric efficiency of molecular junctions.

PubMed

Hsu, Bailey C; Chiang, Chi-Wei; Chen, Yu-Chang

2012-07-11

From first-principles approaches, we investigate the thermoelectric efficiency of a molecular junction where a benzene molecule is connected directly to the platinum electrodes. We calculate the thermoelectric figure of merit ZT in the presence of electron-vibration interactions with and without local heating under two scenarios: linear response and finite bias regimes. In the linear response regime, ZT saturates around the electrode temperature T(e) = 25 K in the elastic case, while in the inelastic case we observe a non-saturated and a much larger ZT beyond T(e) = 25 K attributed to the tail of the Fermi-Dirac distribution. In the finite bias regime, the inelastic effects reveal the signatures of the molecular vibrations in the low-temperature regime. The normal modes exhibiting structures in the inelastic profile are characterized by large components of atomic vibrations along the current density direction on top of each individual atom. In all cases, the inclusion of local heating leads to a higher wire temperature T(w) and thus magnifies further the influence of the electron-vibration interactions due to the increased number of local phonons.

Efficiency Study of a Commercial Thermoelectric Power Generator (TEG) Under Thermal Cycling

NASA Astrophysics Data System (ADS)

Hatzikraniotis, E.; Zorbas, K. T.; Samaras, I.; Kyratsi, Th.; Paraskevopoulos, K. M.

2010-09-01

Thermoelectric generators (TEGs) make use of the Seebeck effect in semiconductors for the direct conversion of heat to electrical energy. The possible use of a device consisting of numerous TEG modules for waste heat recovery from an internal combustion (IC) engine could considerably help worldwide efforts towards energy saving. However, commercially available TEGs operate at temperatures much lower than the actual operating temperature range in the exhaust pipe of an automobile, which could cause structural failure of the thermoelectric elements. Furthermore, continuous thermal cycling could lead to reduced efficiency and lifetime of the TEG. In this work we investigate the long-term performance and stability of a commercially available TEG under temperature and power cycling. The module was subjected to sequential hot-side heating (at 200°C) and cooling for long times (3000 h) in order to measure changes in the TEG’s performance. A reduction in Seebeck coefficient and an increase in resistivity were observed. Alternating-current (AC) impedance measurements and scanning electron microscope (SEM) observations were performed on the module, and results are presented and discussed.

Oligoyne Molecular Junctions for Efficient Room Temperature Thermoelectric Power Generation.

PubMed

Sadeghi, Hatef; Sangtarash, Sara; Lambert, Colin J

2015-11-11

Understanding phonon transport at a molecular scale is fundamental to the development of high-performance thermoelectric materials for the conversion of waste heat into electricity. We have studied phonon and electron transport in alkane and oligoyne chains of various lengths and find that, due to the more rigid nature of the latter, the phonon thermal conductances of oligoynes are counterintuitively lower than that of the corresponding alkanes. The thermal conductance of oligoynes decreases monotonically with increasing length, whereas the thermal conductance of alkanes initially increases with length and then decreases. This difference in behavior arises from phonon filtering by the gold electrodes and disappears when higher-Debye-frequency electrodes are used. Consequently a molecule that better transmits higher-frequency phonon modes, combined with a low-Debye-frequency electrode that filters high-energy phonons is a viable strategy for suppressing phonon transmission through the molecular junctions. The low thermal conductance of oligoynes, combined with their higher thermopower and higher electrical conductance lead to a maximum thermoelectric figure of merit of ZT = 1.4, which is several orders of magnitude higher than that of alkanes.

Compliant Interfacial Layers in Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Firdosy, Samad A. (Inventor); Li, Billy Chun-Yip (Inventor); Ravi, Vilupanur A. (Inventor); Fleurial, Jean-Pierre (Inventor); Caillat, Thierry (Inventor); Anjunyan, Harut (Inventor)

2017-01-01

A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

Thermoelectric converter

DOEpatents

Kim, C.K.

1974-02-26

This invention relates in general to thermoelectric units and more particularly to a tubular thermoelectric unit which includes an array of tandemly arranged radially tapered annular thermoelectric pellets having insulation material of a lower density than the thermoelectric pellets positioned between each pellet. (Official Gazette)

Complex oxides useful for thermoelectric energy conversion

DOEpatents

Majumdar, Arunava [Orinda, CA; Ramesh, Ramamoorthy [Moraga, CA; Yu, Choongho [College Station, TX; Scullin, Matthew L [Berkeley, CA; Huijben, Mark [Enschede, NL

2012-07-17

The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.

Advanced Infrared Photodetectors (Materials Review)

DTIC Science & Technology

1993-12-01

Telluride DMS Dilute Magnetic Semiconductor R)V Field of View FPP Focal Plane Processing IR Infrared LPE Liquid Phase Epitaxy LWIR Long Wave Infrared...operation is normal. Photoconductive (PC) cadmium mercury telluride (CdxHgl-xTe. x - 0.167) has a LWIR cutoff at room temperature; however, operation is...reliability, lightweight On-chip clocks and bias circuits An initial use of FPP is nonuniformity correction (NUC) since spatial response nonuniformity is

Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

NASA Technical Reports Server (NTRS)

Patterson, James D.; Li, Wei-Gang

1995-01-01

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

Codoping in SnTe: Enhancement of Thermoelectric Performance through Synergy of Resonance Levels and Band Convergence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Gangjian; Shi, Fengyuan; Hao, Shiqiang

2015-04-22

We report a significant enhancement of the thermoelectric performance of p-type SnTe over a broad temperature plateau with a peak ZT value of similar to 1.4 at 923 K through In/Cd codoping and a CdS nanostructuring approach. Indium and cadmium play different but complementary roles in modifying the valence band structure of SnTe. Specifically, In-doping introduces resonant levels inside the valence bands, leading to a considerably improved Seebeck coefficient at low temperature. Cd-doping, however, increases the Seebeck coefficient of SnTe remarkably in the mid- to high-temperature region via a convergence of the light and heavy hole bands and an enlargementmore » of the band gap. Combining the two dopants in SnTe yields enhanced Seebeck coefficient and power factor over a wide temperature range due to the synergy of resonance levels and valence band convergence, as demonstrated by the Pisarenko plot and supported by first-principles band structure calculations. Moreover, these codoped samples can be hierarchically structured on all scales (atomic point defects by doping, nanoscale precipitations by CdS nanostructuring, and mesoscale grains by SPS treatment) to achieve highly effective phonon scattering leading to strongly reduced thermal conductivities. In addition to the high maximum ZT the resultant large average ZT of similar to 0.8 between 300 and 923 K makes SnTe an attractive p-type material for high-temperature thermoelectric power generation.« less

Thermoelectric refrigerator having improved temperature stabilization means

DOEpatents

Falco, Charles M.

1982-01-01

A control system for thermoelectric refrigerators is disclosed. The thermoelectric refrigerator includes at least one thermoelectric element that undergoes a first order change at a predetermined critical temperature. The element functions as a thermoelectric refrigerator element above the critical temperature, but discontinuously ceases to function as a thermoelectric refrigerator element below the critical temperature. One example of such an arrangement includes thermoelectric refrigerator elements which are superconductors. The transition temperature of one of the superconductor elements is selected as the temperature control point of the refrigerator. When the refrigerator attempts to cool below the point, the metals become superconductors losing their ability to perform as a thermoelectric refrigerator. An extremely accurate, first-order control is realized.

Thermal transport in bismuth telluride quintuple layer: mode-resolved phonon properties and substrate effects

PubMed Central

Shao, Cheng; Bao, Hua

2016-01-01

The successful exfoliation of atomically-thin bismuth telluride (Bi2Te3) quintuple layer (QL) attracts tremendous research interest in this strongly anharmonic quasi-two-dimensional material. The thermal transport properties of this material are not well understood, especially the mode-wise properties and when it is coupled with a substrate. In this work, we have performed molecular dynamics simulations and normal mode analysis to study the mode-resolved thermal transport in freestanding and supported Bi2Te3 QL. The detailed mode-wise phonon properties are calculated and the accumulated thermal conductivities with respect to phonon mean free path (MFP) are constructed. It is shown that 60% of the thermal transport is contributed by phonons with MFP longer than 20 nm. Coupling with a-SiO2 substrate leads to about 60% reduction of thermal conductivity. Through varying the interfacial coupling strength and the atomic mass of substrate, we also find that phonon in Bi2Te3 QL is more strongly scattered by interfacial potential and its transport process is less affected by the dynamics of substrate. Our study provides an in-depth understanding of heat transport in Bi2Te3 QL and is helpful in further tailoring its thermal property through nanostructuring. PMID:27263656

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, D.C.; Fox, R.J.

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, Dimitrios C.; Fox, Richard J.

1981-01-01

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

NASA Astrophysics Data System (ADS)

Rao, Feng; Ding, Keyuan; Zhou, Yuxing; Zheng, Yonghui; Xia, Mengjiao; Lv, Shilong; Song, Zhitang; Feng, Songlin; Ronneberger, Ider; Mazzarello, Riccardo; Zhang, Wei; Ma, Evan

2017-12-01

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge2Sb2Te5). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc0.2Sb2Te3) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.

High resolution diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals

NASA Technical Reports Server (NTRS)

Steiner, B.; Dobbyn, R.; Black, D.; Burdette, H.; Kuriyama, M.; Spal, R.; Vandenberg, L.; Fripp, A.; Simchick, R.; Lal, R.

1991-01-01

Irregularities found in three crystals grown in space, in four crystals grown entirely on the ground were examined and compared. Irregularities were observed in mercuric iodide, lead tin telluride, triglycine sulfate, and gallium arsenide by high resolution synchrotron x radiation diffraction imaging. Radiation detectors made from mercuric iodide crystals grown in microgravity were reported to perform far better than conventional detectors grown from the same material under full gravity. Effort is now underway to reproduce these 'space' crystals, optimize their properties, and extend comparable superiority to other types of materials.

Measurements of thermoelectric power in annealed and quenched gold-platinum alloys

NASA Technical Reports Server (NTRS)

Baarle, C. V.; Huebener, R. P.

1969-01-01

Report gives measurements of absolute thermoelectric powers of dilute gold-platinum alloys and influence of quenched-in lattice vacancies on their thermoelectric powers. It investigates phonon-drag component of thermoelectric power as a function of platinum concentration, and change in phonon-drag thermoelectric power by lattice vacancies.

High-Performance Thermoelectric Semiconductors

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander

1994-01-01

Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

High Efficiency Thermoelectric Materials and Devices

NASA Technical Reports Server (NTRS)

Kochergin, Vladimir (Inventor)

2013-01-01

Growth of thermoelectric materials in the form of quantum well super-lattices on three-dimensionally structured substrates provide the means to achieve high conversion efficiency of the thermoelectric module combined with inexpensiveness of fabrication and compatibility with large scale production. Thermoelectric devices utilizing thermoelectric materials in the form of quantum well semiconductor super-lattices grown on three-dimensionally structured substrates provide improved thermoelectric characteristics that can be used for power generation, cooling and other applications..

Recent Progress on PEDOT-Based Thermoelectric Materials

PubMed Central

Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

2015-01-01

The thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT)-based materials have attracted attention recently because of their remarkable electrical conductivity, power factor, and figure of merit. In this review, we summarize recent efforts toward improving the thermoelectric properties of PEDOT-based materials. We also discuss thermoelectric measurement techniques and several unsolved problems with the PEDOT system such as the effect of water absorption from the air and the anisotropic thermoelectric properties. In the last part, we describe our work on improving the power output of thermoelectric modules by using PEDOT, and we outline the potential applications of polymer thermoelectric generators. PMID:28787968

Recent Progress on PEDOT-Based Thermoelectric Materials.

PubMed

Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

2015-02-16

The thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT)-based materials have attracted attention recently because of their remarkable electrical conductivity, power factor, and figure of merit. In this review, we summarize recent efforts toward improving the thermoelectric properties of PEDOT-based materials. We also discuss thermoelectric measurement techniques and several unsolved problems with the PEDOT system such as the effect of water absorption from the air and the anisotropic thermoelectric properties. In the last part, we describe our work on improving the power output of thermoelectric modules by using PEDOT, and we outline the potential applications of polymer thermoelectric generators.

Recent Development of Thermoelectric Polymers and Composites.

PubMed

Yao, Hongyan; Fan, Zeng; Cheng, Hanlin; Guan, Xin; Wang, Chen; Sun, Kuan; Ouyang, Jianyong

2018-03-01

Thermoelectric materials can be used as the active materials in thermoelectric generators and as Peltier coolers for direct energy conversion between heat and electricity. Apart from inorganic thermoelectric materials, thermoelectric polymers have been receiving great attention due to their unique advantages including low cost, high mechanical flexibility, light weight, low or no toxicity, and intrinsically low thermal conductivity. The power factor of thermoelectric polymers has been continuously rising, and the highest ZT value is more than 0.25 at room temperature. The power factor can be further improved by forming composites with nanomaterials. This article provides a review of recent developments on thermoelectric polymers and polymer composites. It focuses on the relationship between thermoelectric properties and the materials structure, including chemical structure, microstructure, dopants, and doping levels. Their thermoelectric properties can be further improved to be comparable to inorganic counterparts in the near future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of Bi–Sb–Te Thermoelectric by Cold-Pressed Sintering for Motorcycle Exhaust.

PubMed

Kao, Mu-Jung; Chen, Ming-Jing

2017-04-01

This study was conducted on the Bi–Sb–Te thermoelectric material which is cold-pressed Sintering under 750 Mpa to make square thermoelectric pairs with size 8.2 mm × 8.2 mm and thicknesses 0.8 mm and 1.5 mm. The zone melting method was used to acquire P-type thermoelectric material Bi0.4Sb1.6Te3 and N-type thermoelectric material Bi2Te2.5Se0.5. At temperature 383 K, the measured Seebeck coefficient of Bi0.4Sb1.6Te3 is 222 μV/K, and its thermoelectric figure of merit ZT is 1.35. At temperature 400 K, the measured Seebeck coefficient of Bi2Te2.5Se0.5 is 210 μV/K, and its thermoelectric figure of merit ZT is 1.13. Using Solder paste Sn42Bi58 and copper electrode plate are in series connection with 16 pieces of P/N thermoelectric material to form thermoelectric modules. The thermoelectric module is actually pasted on the motorcycle waste heat source to be evaluated the performance, making the cold-end temperature dissipation heat can enhance the temperature difference between it so as to increase the output power. Increasing the leg thickness of thermoelectric module and making the about 35 °C temperature-difference of those can obviously enhance the performance of in terms of its voltage, its thermoelectric figure of merit ZT and output power of the thermoelectric modules.

Thermoelectric Properties of Novel One-dimensional and Two-dimensional Systems Based on MoS2 Nanoribbons and Sheets

NASA Astrophysics Data System (ADS)

Arab, Abbas

Atomically thin materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have attracted a lot of interest since the discovery of Graphene. Potential use of Graphene in semiconductor industry has been hindered by the fact that graphene is a semi metal with zero band gap. The difficulties in engineering band gap in graphene turn the focus light to inherent semiconducting two-dimensional (2D) materials; TMDCs. Bulk of TMDCs are formed by layers vertically stacked and weakly bonded together via weak van der Waals interactions. These weak interlayer forces make it possible to obtain monolayer by using scotch tape exfoliation or lithium-ion intercalation. Among the semiconducting members of TMDCs, MoS 2 is the most appealing candidate, partly due to its thermal stability and also for its natural abundance. Intensive study of electronic properties of MoS2 has revealed the desirable band gap (1.2 eV), good carrier xmobility (which is close to those of silicon thin films and graphene nanoribbons), thermal stability and a surface free from dangling bonds make it a perfect candidate for electronic and opto-electronic applications. Despite the fact that MoS2 has a high Seebeck coefficient, its thermoelectric properties have not studied as well as it should be. In this work, we have studied thermoelectric properties of monolayer and fewlayer MoS2 sheets in both armchair and zigzag orientations and also of monolayer MoS2 armchair nanoribbons. Density functional theory (DFT) using non-equilibrium Green's function (NEGF) method in ballistic transport regime of Landauer-Buttiker formulation in linear transport approximation has been implemented to calculate the transmission spectra and consequently electronic transport coefficients. Phonon transmission spectra are calculated based on parameterization of Stillinger-Weber potential. Thermoelectric figure of merit, ZT, is calculated using these electronic and phonon transmission spectra. In the case of MoS2 sheets, thermoelectric properties of monolayer, bilayer, trilayer and quadlayer in armchair and zigzag directions have been studied. Our results show that as number of layers increase from monolayer to quadlayer, both transmission spectrum and phonon thermal conductance increase. In addition, strong electronic and thermal anisotropy is found between zigzag and armchair orientations. Transmission coefficient and phonon thermal conductance of zigzag orientation is higher than those of armchair with the same number of layers. Electrical conductance and phonon thermal conductance are competing forces in achieving a high thermoelectric figure of merit. Advantage of having a higher electrical conductance in zigzag orientation has been nullified by having a higher phonon thermal conductance. In fact, our results show higher thermoelectric xifigure of merit for armchair oriented than zigzag oriented sheets. Also as number of layer decreases from quadlayer to monolayer, we are witnessing a higher thermoelectric figure of merit for both armchair and zigzag oriented sheets. Hence, the highest achieved thermoelectric figure of merit was obtained by monolayer armchair MoS2 sheet for both p-type and n-type semiconducting behavior. In case of MoS2 armchair nanoribbons, effect of several factors has been studied; width of nanoribbon, Sulfur vacancy and edge roughness. The electronic properties of nanoribbons are dominated by the presence of edge states that are dependent on the number of zigzag chains across the nanoribbon. In addition, it is found that the phonon thermal conductance of monolayer MoS2 armchair nanoribbon is smaller compared to MoS2 monolayer armchair sheet. This outcome can be explained by phonon edge scattering. The effect of this phonon edge scattering is more pronounced in narrower nanoribbons compared to wide ones which leads to higher thermoelectric figure of merit for narrow nanoribbons. The effect of edge roughness and sulfur vacancy on thermoelectric behavior of MoS2 nanoribbons is also studied. Our result shows that edge roughness decreased the thermoelectric figure of merit compared to those of a perfect nanoribbon as its impact on electrical conductance is more severe than on phonon thermal conductance. Sulfur vacancy, however, improved thermoelectric figure of merit of MoS2 nanoribbons. It has been shown that thermoelectric figure of merit as high as 4 and 3 at T = 500K can be achieved n-doped and p-doped MoS2 nanoribbons. The ability of getting a high thermoelectric figure of merit for both n-type and p-type behavior from the same material will be a huge boost to thermoelectric industry if realized.

Nickel-Graphite Composite Compliant Interface and/or Hot Shoe Material

NASA Technical Reports Server (NTRS)

Firdosy, Samad A.; Chun-Yip Li, Billy; Ravi, Vilupanur A.; Fleurial, Jean-Pierre; Caillat, Thierry; Anjunyan, Harut

2013-01-01

Next-generation high-temperature thermoelectric-power-generating devices will employ segmented architectures and will have to reliably withstand thermally induced mechanical stresses produced during component fabrication, device assembly, and operation. Thermoelectric materials have typically poor mechanical strength, exhibit brittle behavior, and possess a wide range of coefficient of thermal expansion (CTE) values. As a result, the direct bonding at elevated temperatures of these materials to each other to produce segmented leg components is difficult, and often results in localized microcracking at interfaces and mec hanical failure due to the stresses that arise from the CTE mismatch between the various materials. Even in the absence of full mechanical failure, degraded interfaces can lead to increased electrical and thermal resistances, which adversely impact conversion efficiency and power output. The proposed solution is the insertion of a mechanically compliant layer, with high electrical and thermal conductivity, between the low- and high-temperature segments to relieve thermomechanical stresses during device fabrication and operation. This composite material can be used as a stress-relieving layer between the thermoelectric segments and/or between a thermoelectric segment and a hot- or cold-side interconnect material. The material also can be used as a compliant hot shoe. Nickel-coated graphite powders were hot-pressed to form a nickel-graphite composite material. A freestanding thermoelectric segmented leg was fabricated by brazing the compliant pad layer between the high-temperature p- Zintl and low-temperature p-SKD TE segments using Cu-Ag braze foils. The segmented leg stack was heated in vacuum under a compressive load to achieve bonding. The novelty of the innovation is the use of composite material that re duces the thermomechanical stresses en - countered in the construction of high-efficiency, high-temperature therm - o-electric devices. The compliant pad enables the bonding of dissimilar thermoelectric materials while maintaining the desired electrical and thermal properties essential for efficient device operation. The modulus, CTE, electrical, and thermal conductances of the composite can be controlled by varying the ratio of nickel to graphite.

Development and optimization of a stove-powered thermoelectric generator

NASA Astrophysics Data System (ADS)

Mastbergen, Dan

Almost a third of the world's population still lacks access to electricity. Most of these people use biomass stoves for cooking which produce significant amounts of wasted thermal energy, but no electricity. Less than 1% of this energy in the form of electricity would be adequate for basic tasks such as lighting and communications. However, an affordable and reliable means of accomplishing this is currently nonexistent. The goal of this work is to develop a thermoelectric generator to convert a small amount of wasted heat into electricity. Although this concept has been around for decades, previous attempts have failed due to insufficient analysis of the system as a whole, leading to ineffective and costly designs. In this work, a complete design process is undertaken including concept generation, prototype testing, field testing, and redesign/optimization. Detailed component models are constructed and integrated to create a full system model. The model encompasses the stove operation, thermoelectric module, heat sinks, charging system and battery. A 3000 cycle endurance test was also conducted to evaluate the effects of operating temperature, module quality, and thermal interface quality on the generator's reliability, lifetime and cost effectiveness. The results from this testing are integrated into the system model to determine the lowest system cost in $/Watt over a five year period. Through this work the concept of a stove-based thermoelectric generator is shown to be technologically and economically feasible. In addition, a methodology is developed for optimizing the system for specific regional stove usage habits.

Preparation by Poly(Acrylic Acid) Sol-Gel Method and Thermoelectric Properties of γ-Na x CoO2 Bulk Materials

NASA Astrophysics Data System (ADS)

Li, Xiaoyu; Zhang, Li; Tang, Xinfeng

2017-11-01

γ-Na x CoO2 single-phase powders have been synthesized by a poly(acrylic acid) (PAA) sol-gel (SG) method, and γ-Na x CoO2 bulk ceramic fabricated using spark plasma sintering. The effects of the PAA concentration on the sample phase composition and morphology were investigated. The thermoelectric properties of the γ-Na x CoO2 bulk ceramic were also studied. The results show that the PAA concentration did not significantly affect the crystalline phase of the product. However, agglomeration of γ-Na x CoO2 crystals was suppressed by the steric effect of PAA. The Na x CoO2 bulk ceramic obtained using the PAA SG method had higher crystallographic anisotropy, better chemical homogeneity, and higher density than the sample obtained by solid-state reaction (SSR), leading to improved thermoelectric performance. The PAA SG sample had power factor (in-plane PF = σS 2) of 0.61 mW m-1 K-2 and dimensionless figure of merit ( ZT) along the in-plane direction of 0.19 at 900 K, higher than for the SSR sample (in-plane PF = 0.51 mW m-1 K-2, in-plane ZT = 0.17). These results demonstrate that a simple and feasible PAA SG method can be used for synthesis of Na x CoO2 ceramics with improved thermoelectric properties.

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ju, James; Haunschild, Georg; Loitsch, Bernhard

2016-04-15

The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga) < 0.2) yields a more than 10-fold reduction in thermal conductivity (κ) without deteriorating electrical conductivity (σ), while the Seebeck coefficient (S) increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga) = 0.1) with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm{supmore » 2}/V s at an electron density n{sub e} of ∼5×10{sup 19} cm{sup −3}, leading to an exceptionally high σ of ∼5400 (Ωcm){sup −1}. Simultaneously, in very short-period SL structures S becomes decoupled from n{sub e}, κ is further reduced below the alloy limit (κ < 9 W/m-K), and the power factor increases to 2.5×10{sup −4} W/m-K{sup 2} by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.« less

Thermoelectric Polymers and their Elastic Aerogels.

PubMed

Khan, Zia Ullah; Edberg, Jesper; Hamedi, Mahiar Max; Gabrielsson, Roger; Granberg, Hjalmar; Wågberg, Lars; Engquist, Isak; Berggren, Magnus; Crispin, Xavier

2016-06-01

Electronically conducting polymers constitute an emerging class of materials for novel electronics, such as printed electronics and flexible electronics. Their properties have been further diversified to introduce elasticity, which has opened new possibility for "stretchable" electronics. Recent discoveries demonstrate that conducting polymers have thermoelectric properties with a low thermal conductivity, as well as tunable Seebeck coefficients - which is achieved by modulating their electrical conductivity via simple redox reactions. Using these thermoelectric properties, all-organic flexible thermoelectric devices, such as temperature sensors, heat flux sensors, and thermoelectric generators, are being developed. In this article we discuss the combination of the two emerging fields: stretchable electronics and polymer thermoelectrics. The combination of elastic and thermoelectric properties seems to be unique for conducting polymers, and difficult to achieve with inorganic thermoelectric materials. We introduce the basic concepts, and state of the art knowledge, about the thermoelectric properties of conducting polymers, and illustrate the use of elastic thermoelectric conducting polymer aerogels that could be employed as temperature and pressure sensors in an electronic-skin. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method of Suppressing Sublimation in Advanced Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Sakamoto, Jeffrey S. (Inventor); Caillat, Thierry (Inventor); Fleurial, Jean-Pierre (Inventor); Snyder, G. Jeffrey (Inventor)

2009-01-01

A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.

Encapsulation of high temperature thermoelectric modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salvador, James R.; Sakamoto, Jeffrey; Park, Youngsam

A method of encapsulating a thermoelectric device and its associated thermoelectric elements in an inert atmosphere and a thermoelectric device fabricated by such method are described. These thermoelectric devices may be intended for use under conditions which would otherwise promote oxidation of the thermoelectric elements. The capsule is formed by securing a suitably-sized thin-walled strip of oxidation-resistant metal to the ceramic substrates which support the thermoelectric elements. The thin-walled metal strip is positioned to enclose the edges of the thermoelectric device and is secured to the substrates using gap-filling materials. The strip, substrates and gap-filling materials cooperatively encapsulate the thermoelectricmore » elements and exclude oxygen and water vapor from atmospheric air so that the elements may be maintained in an inert, non-oxidizing environment.« less

Universal thermoelectric unit

NASA Astrophysics Data System (ADS)

Fedorov, M. I.; Engalychev, A. E.; Zaitsev, V. K.; Kaliazin, A. E.; Solomkin, F. Yu.

1994-08-01

The problems of energy supply of low power electric devices very often can be solved with thermoelectric generator even with low coefficient of performance, when other electric energy sources are not convenient. The problems of thermoelectric and construction choice for such generators are discussed in the paper. A series of domestic thermoelectric generators was designed by the authors. The work is based on designing an universal thermoelectric unit—a battery which consist of ten thermoelements. The coefficient of performance of the unit is about 4%. Any thermoelectric generator can be made as a combination of these units. Principal opportunity of production such thermoelectric generators on industrial scale was proved.

Electron mobility in mercury cadmium telluride

NASA Technical Reports Server (NTRS)

Patterson, James D.

1988-01-01

A previously developed program, which includes all electronic interactions thought to be important, does not correctly predict the value of electron mobility in mercury cadmium telluride particularly near room temperature. Part of the reason for this discrepancy is thought to be the way screening is handled. It seems likely that there are a number of contributors to errors in the calculation. The objective is to survey the calculation, locate reasons for differences between experiment and calculation, and suggest improvements.

Bulk Dissolution Rates of Cadmium and Bismuth Tellurides As a Function of pH, Temperature and Dissolved Oxygen.

PubMed

Biver, Marc; Filella, Montserrat

2016-05-03

The toxicity of Cd being well established and that of Te suspected, the bulk, surface-normalized steady-state dissolution rates of two industrially important binary tellurides-polycrystalline cadmium and bismuth tellurides- were studied over the pH range 3-11, at various temperatures (25-70 °C) and dissolved oxygen concentrations (0-100% O2 in the gas phase). The behavior of both tellurides is strikingly different. The dissolution rates of CdTe monotonically decreased with increasing pH, the trend becoming more pronounced with increasing temperature. Activation energies were of the order of magnitude associated with surface controlled processes; they decreased with decreasing acidity. At pH 7, the CdTe dissolution rate increased linearly with dissolved oxygen. In anoxic solution, CdTe dissolved at a finite rate. In contrast, the dissolution rate of Bi2Te3 passed through a minimum at pH 5.3. The activation energy had a maximum in the rate minimum at pH 5.3 and fell below the threshold for diffusion control at pH 11. No oxygen dependence was detected. Bi2Te3 dissolves much more slowly than CdTe; from one to more than 3.5 orders of magnitude in the Bi2Te3 rate minimum. Both will readily dissolve under long-term landfill deposition conditions but comparatively slowly.

Fundamental and progress of Bi2Te3-based thermoelectric materials

NASA Astrophysics Data System (ADS)

Hong, Min; Chen, Zhi-Gang; Zou, Jin

2018-04-01

Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels. Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature. Due to the intensive theoretical investigations and experimental demonstrations, significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials. In this review, we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties. On this basis, we studied the effect of material parameters on thermoelectric properties. Then, we analyzed the features of Bi2Te3-based thermoelectric materials, including the lattice defects, anisotropic behavior and the strong bipolar conduction at relatively high temperature. Then we accordingly summarized the strategies for enhancing the thermoelectric performance, including point defect engineering, texture alignment, and band gap enlargement. Moreover, we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method, ball milling, and melt spinning. Lastly, we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3, which will enlighten the enhancement of thermoelectric performance in broader materials.

A Review on the Fabrication of Polymer-Based Thermoelectric Materials and Fabrication Methods

PubMed Central

Kamarudin, Muhammad Akmal; Sahamir, Shahrir Razey; Datta, Robi Shankar; Long, Bui Duc; Mohd Sabri, Mohd Faizul; Mohd Said, Suhana

2013-01-01

Thermoelectricity, by converting heat energy directly into useable electricity, offers a promising technology to convert heat from solar energy and to recover waste heat from industrial sectors and automobile exhausts. In recent years, most of the efforts have been done on improving the thermoelectric efficiency using different approaches, that is, nanostructuring, doping, molecular rattling, and nanocomposite formation. The applications of thermoelectric polymers at low temperatures, especially conducting polymers, have shown various advantages such as easy and low cost of fabrication, light weight, and flexibility. In this review, we will focus on exploring new types of polymers and the effects of different structures, concentrations, and molecular weight on thermoelectric properties. Various strategies to improve the performance of thermoelectric materials will be discussed. In addition, a discussion on the fabrication of thermoelectric devices, especially suited to polymers, will also be given. Finally, we provide the challenge and the future of thermoelectric polymers, especially thermoelectric hybrid model. PMID:24324378

New Composite Thermoelectric Materials for Macro-size Applications

ScienceCinema

Dresselhaus, Mildred [MIT, Cambridge, Massachusetts, United States

2017-12-09

A review will be given of several important recent advances in both thermoelectrics research and industrial thermoelectric applications, which have attracted much attention, increasing incentives for developing advanced materials appropriate for large-scale applications of thermoelectric devices. One promising strategy is the development of materials with a dense packing of random nanostructures as a route for the sacle-up of thermoelectrics applications. The concepts involved in designing composite materials containing nanostructures for thermoelectric applications will be discussed in general terms. Specific application is made to the Bi{sub 2}Te{sub 3} nanocomposite system for use in power generation. Also emphasized are the scientific advantages of the nanocomposite approach for the simultaneous increase in the power factor and decrease of the thermal conductivity, along with the practical advantages of having bulk samples for property measurements and device applications. A straightforward path is identified for the scale-up of thermoelectric materials synthesis containing nanostructured constituents for use in thermoelectric applications. We end with some vision of where the field of thermoelectrics is now heading.

p × n-Type Transverse Thermoelectrics: A Novel Type of Thermal Management Material

NASA Astrophysics Data System (ADS)

Tang, Yang; Cui, Boya; Zhou, Chuanle; Grayson, Matthew

2015-06-01

In this paper we review the recently identified p × n-type transverse thermoelectrics and study the thermoelectric properties of the proposed candidate materials. Anisotropic electron and hole conductivity arise from either an artificially engineered band structure or from appropriately anisotropic crystals, and result in orthogonal p-type and n-type directional Seebeck coefficients, inducing a non-zero off-diagonal transverse Seebeck coefficient with appropriately oriented currents. Such materials have potential for new applications of thermoelectric materials in transverse Peltier cooling and transverse thermal energy harvesting. In this paper we review general transverse thermoelectric phenomena to identify advantages of p × n-type transverse thermoelectrics compared with previously studied transverse thermoelectric phenomena. An intuitive overview of the band structure of one such p × n-material, the InAs/GaSb type-II superlattice, is introduced, and the plot of thermoelectric performance as a function of superlattice structure is calculated, as an example of how band structures can be optimized for the best transverse thermoelectric performance.

Strategies for discovery and optimization of thermoelectric materials: Role of real objects and local fields

NASA Astrophysics Data System (ADS)

Zhu, Hao; Xiao, Chong

2018-06-01

Thermoelectric materials provide a renewable and eco-friendly solution to mitigate energy shortages and to reduce environmental pollution via direct heat-to-electricity conversion. Discovery of the novel thermoelectric materials and optimization of the state-of-the-art material systems lie at the core of the thermoelectric society, the basic concept behind these being comprehension and manipulation of the physical principles and transport properties regarding thermoelectric materials. In this mini-review, certain examples for designing high-performance bulk thermoelectric materials are presented from the perspectives of both real objects and local fields. The highlights of this topic involve the Rashba effect, Peierls distortion, local magnetic field, and local stress field, which cover several aspects in the field of thermoelectric research. We conclude with an overview of future developments in thermoelectricity.

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices.

PubMed

Srathongluan, Pornpimol; Vailikhit, Veeramol; Teesetsopon, Pichanan; Choopun, Supab; Tubtimtae, Auttasit

2016-11-01

This work demonstrates the synthesis of a novel double-layered Cu2-xTe/MnTe structure on a WO3 photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu2-xTe(17) ∼5-10nm and MnTe(3) ∼2nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu2-xTe(17)/MnTe(11) are ∼50 and 150nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu2-xTe nanoparticles (NPs), leading to a narrower Eg equal to 0.58eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO3, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO3/boron-doped [Cu2-xTe(17)/MnTe(11)] structure with a photocurrent density (Jsc)=16.43mA/cm(2), an open-circuit voltage (Voc)=0.305V and a fill factor (FF)=28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material. Copyright © 2016 Elsevier Inc. All rights reserved.

Nanowire-based thermoelectrics

NASA Astrophysics Data System (ADS)

Ali, Azhar; Chen, Yixi; Vasiraju, Venkata; Vaddiraju, Sreeram

2017-07-01

Research on thermoelectrics has seen a huge resurgence since the early 1990s. The ability of tuning a material’s electrical and thermal transport behavior upon nanostructuring has led to this revival. Nevertheless, thermoelectric performances of nanowires and related materials lag far behind those achieved with thin-film superlattices and quantum dot-based materials. This is despite the fact that nanowires offer many distinct advantages in enhancing the thermoelectric performances of materials. The simplicity of the strategy is the first and foremost advantage. For example, control of the nanowire diameters and their surface roughnesses will aid in enhancing their thermoelectric performances. Another major advantage is the possibility of obtaining high thermoelectric performances using simpler nanowire chemistries (e.g., elemental and binary compound semiconductors), paving the way for the fabrication of thermoelectric modules inexpensively from non-toxic elements. In this context, the topical review provides an overview of the current state of nanowire-based thermoelectrics. It concludes with a discussion of the future vision of nanowire-based thermoelectrics, including the need for developing strategies aimed at the mass production of nanowires and their interface-engineered assembly into devices. This eliminates the need for trial-and-error strategies and complex chemistries for enhancing the thermoelectric performances of materials.

Multiple doping of silicon-germanium alloys for thermoelectric applications

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

1989-01-01

It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

Low lattice thermal conductivity of stanene

NASA Astrophysics Data System (ADS)

Peng, Bo; Zhang, Hao; Shao, Hezhu; Xu, Yuchen; Zhang, Xiangchao; Zhu, Heyuan

2016-02-01

A fundamental understanding of phonon transport in stanene is crucial to predict the thermal performance in potential stanene-based devices. By combining first-principle calculation and phonon Boltzmann transport equation, we obtain the lattice thermal conductivity of stanene. A much lower thermal conductivity (11.6 W/mK) is observed in stanene, which indicates higher thermoelectric efficiency over other 2D materials. The contributions of acoustic and optical phonons to the lattice thermal conductivity are evaluated. Detailed analysis of phase space for three-phonon processes shows that phonon scattering channels LA + LA/TA/ZA ↔ TA/ZA are restricted, leading to the dominant contributions of high-group-velocity LA phonons to the thermal conductivity. The size dependence of thermal conductivity is investigated as well for the purpose of the design of thermoelectric nanostructures.

Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium

NASA Astrophysics Data System (ADS)

Zhu, G. H.; Lee, H.; Lan, Y. C.; Wang, X. W.; Joshi, G.; Wang, D. Z.; Yang, J.; Vashaee, D.; Guilbert, H.; Pillitteri, A.; Dresselhaus, M. S.; Chen, G.; Ren, Z. F.

2009-05-01

The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison with bulk crystalline Si. However, nanosize interfaces are not as effective as point defects in scattering phonons with wavelengths shorter than 1 nm. We further found that a 5at.% Ge replacing Si is very efficient in scattering phonons shorter than 1 nm, resulting in a further thermal conductivity reduction by a factor of 2, thereby leading to a thermoelectric figure of merit 0.95 for Si95Ge5, similar to that of large grained Si80Ge20 alloys.

ZT Optimization: An Application Focus

PubMed Central

Tuley, Richard; Simpson, Kevin

2017-01-01

Significant research has been performed on the challenge of improving thermoelectric materials, with maximum peak figure of merit, ZT, the most common target. We use an approximate thermoelectric material model, matched to real materials, to demonstrate that when an application is known, average ZT is a significantly better optimization target. We quantify this difference with some examples, with one scenario showing that changing the doping to increase peak ZT by 19% can lead to a performance drop of 16%. The importance of average ZT means that the temperature at which the ZT peak occurs should be given similar weight to the value of the peak. An ideal material for an application operates across the maximum peak ZT, otherwise maximum performance occurs when the peak value is reduced in order to improve the peak position. PMID:28772668

Fabrication of Advanced Thermoelectric Materials by Hierarchical Nanovoid Generation

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Elliott, James R. (Inventor); Stoakley, Diane M. (Inventor); Chu, Sang-Hyon (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Choi, Sang Hyouk (Inventor); Lillehei, Peter T. (Inventor)

2011-01-01

A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

Significant thermal conductivity reduction of silicon nanowire forests through discrete surface doping of germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Ying; Hong, Guo; Raja, Shyamprasad N.

2015-03-02

Silicon nanowires (SiNWs) are promising materials for the realization of highly-efficient and cost effective thermoelectric devices. Reduction of the thermal conductivity of such materials is a necessary and viable pathway to achieve sufficiently high thermoelectric efficiencies, which are inversely proportional to the thermal conductivity. In this article, vertically aligned forests of SiNW and germanium (Ge)-doped SiNW with diameters around 100 nm have been fabricated, and their thermal conductivity has been measured. The results show that discrete surface doping of Ge on SiNW arrays can lead to 23% reduction in thermal conductivity at room temperature compared to uncoated SiNWs. Such reduction canmore » be further enhanced to 44% following a thermal annealing step. By analyzing the binding energy changes of Ge-3d and Si-2p using X-ray photoelectron spectroscopy, we demonstrate that surface doped Ge interacts strongly with Si, enhancing phonon scattering at the Si-Ge interface as has also been shown in non-equilibrium molecular dynamics studies of single nanowires. Overall, our results suggest a viable pathway to improve the energy conversion efficiency of nanowire-forest thermoelectric nanomaterials.« less

Thermoelectric properties of periodic quantum structures in the Wigner-Rode formalism

NASA Astrophysics Data System (ADS)

Kommini, Adithya; Aksamija, Zlatan

2018-01-01

Improving the thermoelectric Seebeck coefficient, while simultaneously reducing thermal conductivity, is required in order to boost thermoelectric (TE) figure of merit (ZT). A common approach to improve the Seebeck coefficient is electron filtering where ‘cold’ (low energy) electrons are restricted from participating in transport by an energy barrier (Kim and Lundstrom 2011 J. Appl. Phys. 110 034511, Zide et al 2010 J. Appl. Phys. 108 123702). However, the impact of electron tunneling through thin barriers and resonant states on TE properties has been given less attention, despite the widespread use of quantum wells and superlattices (SLs) in TE applications. In our work, we develop a comprehensive transport model using the Wigner-Rode formalism. We include the full electronic bandstructure and all the relevant scattering mechanisms, allowing us to simulate both energy relaxation and quantum effects from periodic potential barriers. We study the impact of barrier shape on TE performance and find that tall, sharp barriers with small period lengths lead to the largest increase in both Seebeck coefficient and conductivity, thus boosting power factor and TE efficiency. Our findings are robust against additional elastic scattering such as atomic-scale roughness at side-walls of SL nanowires.

Cosubstitution effect on the magnetic, transport, and thermoelectric properties of the electron-doped perovskite manganite CaMnO3

NASA Astrophysics Data System (ADS)

Okuda, T.; Fujii, Y.

2010-11-01

We have investigated magnetic, transport, and thermoelecric properties of polycrystalline Ca1-xSrxMn1-yMoyO3, and have tried to optimize the n-type thermoelectric response below room temperature. The Sr substitution enlarges a Mn-O-Mn bond angle and increases a crystal symmetry, which enhances one electron transfer of the electrons doped by the Mo substitution. This effect promotes the competition between correlations of a G-type antiferromagnetic (AF) order and a C-type AF order accompanying a 3d3z2-r2 orbital order, leading to the more complicated magnetic phase diagram of Ca0.75Sr0.25Mn1-yMoyO3 than that of CaMn1-yMoyO3. A subtle balance between the effects of the enhanced one electron transfer and the introduced disorder into the A(Ca)-site upon the transport properties enhances a dimensionless thermoelectric figure-of-merit ZT up to 0.03 at room temperature. However, a correlation of the 3d3z2-r2 orbital order is also promoted by the Sr substitution, which bounds a further enhancement of ZT.

Thermoelectric transport properties in graphene connected molecular junctions

NASA Astrophysics Data System (ADS)

Rodriguez, S. T.; Grosu, I.; Crisan, M.; Ţifrea, I.

2018-02-01

We study the electronic contribution to the main thermoelectric properties of a molecular junction consisting of a single quantum dot coupled to graphene external leads. The system electrical conductivity (G), Seebeck coefficient (S), and the thermal conductivity (κ), are numerically calculated based on a Green's function formalism that includes contributions up to the Hartree-Fock level. We consider the system leads to be made either of pure or gapped-graphene. To describe the free electrons in the gapped-graphene electrodes we used two possible scenarios, the massive gap scenario, and the massless gap scenario, respectively. In all cases, the Fano effect is responsible for a strong violation of the Wiedemann-Franz law and we found a substantial increase of the system figure of merit ZT due to a drastic reduction of the system thermal coefficient. In the case of gapped-graphene electrodes, the system figure of merit presents a maximum at an optimal value of the energy gap of the order of Δ / D ∼ 0.002 (massive gap scenario) and Δ / D ∼ 0.0026 (massless gap scenario). Additionally, for all cases, the system figure of merit is temperature dependent.

Soft Phonon Modes Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe.

PubMed

Roychowdhury, Subhajit; Jana, Manoj K; Pan, Jaysree; Guin, Satya N; Sanyal, Dirtha; Waghmare, Umesh V; Biswas, Kanishka

2018-04-03

Crystalline solids with intrinsically low lattice thermal conductivity (κ L ) are crucial to realizing high-performance thermoelectric (TE) materials. Herein, we show an ultralow κ L of 0.35 Wm -1  K -1 in AgCuTe, which has a remarkable TE figure-of-merit, zT of 1.6 at 670 K when alloyed with 10 mol % Se. First-principles DFT calculation reveals several soft phonon modes in its room-temperature hexagonal phase, which are also evident from low-temperature heat-capacity measurement. These phonon modes, dominated by Ag vibrations, soften further with temperature giving a dynamic cation disorder and driving the superionic transition. Intrinsic factors cause an ultralow κ L in the room-temperature hexagonal phase, while the dynamic disorder of Ag/Cu cations leads to reduced phonon frequencies and mean free paths in the high-temperature rocksalt phase. Despite the cation disorder at elevated temperatures, the crystalline conduits of the rigid anion sublattice give a high power factor. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Size effect in thermoelectric materials

NASA Astrophysics Data System (ADS)

Mao, Jun; Liu, Zihang; Ren, Zhifeng

2016-12-01

Thermoelectric applications have attracted increasing interest recently due to its capability of converting waste heat into electricity without hazardous emissions. Materials with enhanced thermoelectric performance have been reported in recent two decades. The revival of research for thermoelectric materials began in early 1990s when the size effect is considered. Low-dimensional materials with exceptionally high thermoelectric figure of merit (ZT) have been presented, which broke the limit of ZT around unity. The idea of size effect in thermoelectric materials even inspired the later nanostructuring and band engineering strategies, which effectively enhanced the thermoelectric performance of bulk materials. In this overview, the size effect in low-dimensional thermoelectric materials is reviewed. We first discuss the quantum confinement effect on carriers, including the enhancement of electronic density of states, semimetal to semiconductor transition and carrier pocket engineering. Then, the effect of assumptions on theoretical calculations is presented. Finally, the effect of phonon confinement and interface scattering on lattice thermal conductivity is discussed.

Thermoelectricity for future sustainable energy technologies

NASA Astrophysics Data System (ADS)

Weidenkaff, Anke

2017-07-01

Thermoelectricity is a general term for a number of effects describing the direct interconversion of heat and electricity. Thermoelectric devices are therefore promising, environmental-friendly alternatives to conventional power generators or cooling units. Since the mid-90s, research on thermoelectric properties and their applications has steadily increased. In the course of years, the development of high-temperature resistant TE materials and devices has emerged as one of the main areas of interest focusing both on basic research and practical applications. A wide range of innovative and cost-efficient material classes has been studied and their properties improved. This has also led to advances in synthesis and metrology. The paper starts out with thermoelectric history, basic effects underlying thermoelectric conversion and selected examples of application. The main part focuses on thermoelectric materials including an outline of the design rules, a review on the most common materials and the feasibility of improved future high-temperature thermoelectric converters.

Design, Implementation, and Characterization of a Dedicated Breast Computed Mammo Tomography System for Enhanced Lesion Imaging

DTIC Science & Technology

2007-03-01

common FOV of each system. 64 SPECT System Our current emission tomography system uses a compact 16x20cm 2 field of view Cadmium Zinc Telluride (CZT...Brzymialkiewicz, M.P. Tornai, R.L. McKinley, J.E. Bowsher. “Evaluation of Fully 3D Emission Mammotomography with a Compact Cadmium Zinc Telluride Detector...conclusions. Stacks of breast tissue equivalent plates, each 2.0cm thick (CIRS Inc., Norfolk, VA) having either 100% glandular or 100% adipose composition

Telluride Misfit Layer Compounds: [(PbTe) 1.17 ] m (TiTe 2 ) n

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Daniel B.; Beekman, Matt; Disch, Sabrina

Telluride misfit layer compounds are reported for the first time. These compounds were synthesized using a novel approach of structurally designing a precursor that would form the desired product upon low-temperature annealing, which allows the synthesis of kinetically stable products that do not appear on the equilibrium phase diagram. Four new compounds of the [(PbTe)1.17]m(TiTe2)n family are reported, and their structures were examined by a variety of X-ray diffraction techniques.

Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

NASA Technical Reports Server (NTRS)

Lehoczky, S. L.; Szofran, F. R.

1981-01-01

Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

Noninvasive Spatially Offset and Transmission Raman Mapping of Breast Tissue: A Multimodal Approach Towards the In Vivo assessment of Tissue Pathology

DTIC Science & Technology

2013-04-01

liquid nitrogen cooled mercury cadmium telluride ( MCT ) detector and compare their performance to a commercial FT-IR imaging instrument. We examine the...telluride ( MCT ) detector (InfraRed Associates, Stuart, FL), and in a second widefield imaging configuration, we employed a cooled focal plane array (FPA...experiment, a cooled focal plane array (FPA) was substituted for the bolometer. (b) A cooled single-element MCT detector is utilized with an adjustable

Detection of Bioaerosols Using Single Particle Thermal Emission Spectroscopy (First-year Report)

DTIC Science & Technology

2012-02-01

cooled MCT detector with a noise equivalent power (NEP) of 7x10(–13) W/Hz, yields a detection S/N > 13 (assuming a sufficiently cooled background). We...dispersively resolved using 190-mm Horiba spectrometer that houses a time-gated 32-element mercury cadmium telluride ( MCT ) linear array. In this report...to 10.0 ms. Minimum integration (and readout) periods for the time-gated 32-element mercury cadmium telluride ( MCT ) linear array are 10 µs. Based

Transport properties of bismuth telluride compound prepared by mechanical alloying

NASA Astrophysics Data System (ADS)

Khade, Poonam; Bagwaiya, Toshi; Bhattacharya, Shovit; Rayaprol, Sudhindra; Sahu, Ashok K.; Shelke, Vilas

2017-05-01

We have synthesized bismuth telluride compound using mechanical alloying and hot press sintering method. The phase formation, crystal structure was evaluated by X-ray diffraction and Raman spectroscopy. The scanning electron microscopy images indicated sub-micron sized grains. We observed low value of thermal conductivity 0.39 W/mK at room temperature as a result of grain size reduction by increasing deformation. The performance of the samples can be improved by reducing the grain size, which increases the grain boundary scattering.

Seeded Physical Vapor Transport of Cadmium-Zinc Telluride Crystals: Growth and Characterization

NASA Technical Reports Server (NTRS)

Palosz, W.; George, M. A.; Collins, E. E.; Chen, K.-T.; Zhang, Y.; Burger, A.

1997-01-01

Crystals of Cd(1-x)Zn(x)Te with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

Telluride Misfit Layer Compounds: [(PbTe) 1.17 ] m (TiTe 2 ) n

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Daniel B.; Beekman, Matt; Disch, Sabrina

2014-04-09

Telluride misfit layer compounds are reported for the first time. These compounds were synthesized using a novel approach of structurally designing a precursor that would form the desired product upon low-temperature annealing, which allows the synthesis of kinetically stable products that do not appear on the equilibrium phase diagram. Four new compounds of the [(PbTe)1.17]m(TiTe2)n family are reported, and their structures were examined by a variety of X-ray diffraction techniques.

.sup.123m Te-Labeled biochemicals and method of preparation

DOEpatents

Knapp, Jr., Furn F.

1980-01-01

A novel class of .sup.123m Te-labeled steroids and amino acids is provided by the method of reacting a .sup.123m Te symmetric diorgano ditelluride with a hydride reducing agent and a source of alkali metal ions to form an alkali metal organo telluride. The alkali metal organo telluride is reacted with a primary halogenated steroidal side chain, amino acid, or amino acid precursor such as hydantoin. The novel compounds are useful as biological tracers and as organal imaging agents.

Calibration of High Temperature Thermal Conductivity System: New Algorithm to Measure Heat Capacity Using Flash Thermal Diffusivity in Thermoelectric Materials

NASA Technical Reports Server (NTRS)

Deb, Rahul; Snyder, Jeff G.

2005-01-01

A viewgraph presentation describing thermoelectric materials, an algorithm for heat capacity measurements and the process of flash thermal diffusivity. The contents include: 1) What are Thermoelectrics?; 2) Thermoelectric Applications; 3) Improving Thermoelectrics; 4) Research Goal; 5) Flash Thermal Diffusivity; 6) Background Effects; 7) Stainless Steel Comparison; 8) Pulse Max Integral; and 9) Graphite Comparison Algorithm.

Conversion system overview assessment. Volume 1: solar thermoelectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jayadev, T. S.; Henderson, J.; Finegold, J.

1979-08-01

An assessment of thermoelectrics for solar energy conversion is given. There is significant potential for solar thermoelectrics in solar technologies where collector costs are low; e.g., Ocean Thermal Energy Conversion (OTEC) and solar ponds. Reports of two studies by manufacturers assessing the cost of thermoelectric generators in large scale production are included in the appendix and several new concepts thermoelectric systems are presented. (WHK)