Essentials for Successful and Widespread LED Lighting Adoption

NASA Astrophysics Data System (ADS)

Khan, Nisa

2011-03-01

Solid-state lighting (SSL), with light-emitting diodes (LEDs) as the light source, is a growing and essential field, particularly in regard to the heightened need for global energy efficiency. In recent years, SSL has experienced remarkable advances in efficiency, light output magnitude and quality. Thus such diverse applications as signage, message centers, displays, and special lighting are now adopting LEDs, taking 2010's market to 9.1 billion - 68% growth from the previous year! While this is promising, future growth in both display and lighting applications will rely upon unveiling deeper understanding and key innovations in LED lighting science and technologies. In this presentation, some LED lighting fundamentals, engineering challenges and novel solutions will be discussed to address reduction in efficiency (a.k.a. droop) at high currents, and to obtain uniform light distribution for overcoming LEDs' directional nature. The droop phenomenon has been a subject of much controversy in the industry and despite several studies and claims, a widely-accepted explanation still lacks because of counter arguments and experiments. Recently several research studies have identified that the droop behavior in nitride-based LEDs beyond certain current density ranges can only be comprehensively explained if the current leaking beyond the LED active region is included. Although such studies have identified a few useful current leakage mechanisms outside the active region, no one has included current leakage, due to non-ideal, 3-D device structures that create undesirable current distribution inside and outside the active region. This talk will address achieving desirable current distributions from optimized 3-D device structures that should reduce current leakage and hence the droop behavior. In addition to novel LED design solutions for droop reduction and uniform light distribution, the talk will address cost and yield concerns as they pertain to core material scarcity. Such solutions are expected to make LED lights more energy efficient, pleasant in appearance, longer-lasting, affordable, and thus suitable for green living.

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

NASA Astrophysics Data System (ADS)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Hanna, Mina J.; Zhao, Han; Lee, Jack C.

2012-10-01

We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Electron-beam irradiation-induced gate oxide degradation

NASA Astrophysics Data System (ADS)

Cho, Byung Jin; Chong, Pei Fen; Chor, Eng Fong; Joo, Moon Sig; Yeo, In Seok

2000-12-01

Gate oxide degradation induced by electron-beam irradiation has been studied. A large increase in the low-field excess leakage current was observed on irradiated oxides and this was very similar to electrical stress-induced leakage currents. Unlike conventional electrical stress-induced leakage currents, however, electron-beam induced leakage currents exhibit a power law relationship with fluency without any signs of saturation. It has also been found that the electron-beam neither accelerates nor initiates quasibreakdown of the ultrathin gate oxide. Therefore, the traps generated by electron-beam irradiation do not contribute to quasibreakdown, only to the leakage current.

Enhanced ground bounce noise reduction in a low-leakage CMOS multiplier

NASA Astrophysics Data System (ADS)

Verma, Bipin Kumar; Akashe, Shyam; Sharma, Sanjay

2015-09-01

In this paper, various parameters are used to reduce leakage power, leakage current and noise margin of circuits to enhance their performance. A multiplier is proposed with low-leakage current and low ground bounce noise for the microprocessor, digital signal processors (DSP) and graphics engines. The ground bounce noise problem appears when a conventional power-gating circuit transits from sleep-to-active mode. This paper discusses a reduction in leakage current in the stacking power-gating technique by three modes - sleep, active and sleep-to-active. The simulation results are performed on a 4 × 4 carry-save multiplier for leakage current, active power, leakage power and ground bounce noise, and comparison made for different nanoscales. Ground bounce noise is limited to 90%. The leakage current of the circuit is decimated up to 80% and the active power is reduced to 31%. We performed simulations using cadence virtuoso 180 and 45 nm at room temperature at various supply voltages.

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION... Current, leakage. A stray electric current of relatively small value which flows through or across the...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2011-10-01 2011-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2014-10-01 2014-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2013-10-01 2013-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2012-10-01 2012-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Dai; Harada, Shinsuke; Ishimori, Hitoshi; Takasu, Shinji; Hatakeyama, Tetsuo; Takei, Manabu; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime

2015-01-01

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sometani, Mitsuru; Takei, Manabu; Fuji Electric Co. Ltd., 1 Fuji-machi, Hino, 191-8502 Tokyo

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO{sub 2}/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO{sub 2}/4H-SiC interface. On the basis of Arrhenius plots of the PFmore » current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO{sub 2} films on the Si-face of 4H-SiC.« less

Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Hyun-Sang; Jeon, Jae-Hong; Han, Min-Koo

2008-03-01

We have proposed a new poly-Si TFT pixel, which can suppress TFT leakage current effect on active matrix organic diode (AMOLED) displays, by employing a new circular switching TFT and additional signal line for compensating the leakage current. When the leakage current of switching TFT is increased, the VGS of the current driving TFT in the proposed pixel is not altered by the variable data voltages due to the circular switching TFT. Our simulation results show that OLED current variation of the proposed pixel can be suppressed less than 3%, while that of conventional pixel exceeds 30%. The proposed pixel may be suitable to suppress the leakage current effect on AMOLED display.

Electric modulation of conduction in multiferroic Ni-doped GaFeO3 ceramics

NASA Astrophysics Data System (ADS)

Ghani, Awais; Yang, Sen; Rajput, S. S.; Ahmed, S.; Murtaza, Adil; Zhou, Chao; Yu, Zhonghai; Zhang, Yin; Song, Xiaoping; Ren, Xiaobing

2018-06-01

In this work, the effects of Ni substitution on the electrical leakage and multiferroic properties of GaFeO3 were examined. Structural analysis of grown ceramics using x-ray diffraction and Raman shows that all ceramics have pure phases with an orthorhombic structure and space group. Ni substitutions slightly modify lattice parameters and induce lattice distortion within the same crystalline structure. It is observed that with increasing Ni-content up to 0.10, the magnetic transition temperature () increases from 196 K to 407 K. Ni-doped samples showed better ferroelectric properties and a drastic reduction in leakage current (~three orders of magnitude) at room temperature. Enhanced characteristics behavior is observed for 10% Ni substitution (GaFe0.9Ni0.1O3) and higher substitution leads to deterioration of properties with a larger leakage current. It is proposed that the role of Ni substitution can reduce hopping between Fe+3 and Fe+2 as well as suppressing the oxygen vacancies. This work would open new possibilities for integrating polycrystalline GaFeO3 at room temperature for magnetoelectric applications.

Gamma Rhythm Simulations in Alzheimer's Disease

NASA Astrophysics Data System (ADS)

Montgomery, Samuel; Perez, Carlos; Ullah, Ghanim

The different neural rhythms that occur during the sleep-wake cycle regulate the brain's multiple functions. Memory acquisition occurs during fast gamma rhythms during consciousness, while slow oscillations mediate memory consolidation and erasure during sleep. At the neural network level, these rhythms are generated by the finely timed activity within excitatory and inhibitory neurons. In Alzheimer's Disease (AD) the function of inhibitory neurons is compromised due to an increase in amyloid beta (A β) leading to elevated sodium leakage from extracellular space in the hippocampus. Using a Hodgkin-Huxley formalism, heightened sodium leakage current into inhibitory neurons is observed to compromise functionality. Using a simple two neuron system it was observed that as the conductance of the sodium leakage current is increased in inhibitory neurons there is a significant decrease in spiking frequency regarding the membrane potential. This triggers a significant increase in excitatory spiking leading to aberrant network behavior similar to that seen in AD patients. The next step is to extend this model to a larger neuronal system with varying synaptic densities and conductance strengths as well as deterministic and stochastic drives.

Leakage current evaluation for pn junctions formed in DC and RF MeV ion implanted wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yanagisawa, Yasunobu; Honda, Mitsuharu; Ogasawara, Makota

1996-12-31

The leakage current of pn junctions formed in DC and RF MeV implanted wells have been evaluated. There is no substantial difference in the leakage current levels between the continuous and pulsive beam implantations. However, the leakage current, so called diffusion current, for RF implanted wells is slightly higher than that for DC implanted wells on some condition. This suggests a possibility that relatively higher density of residual defects remains in the case of RIF implant.

Sheath effects observed on a 10 meter high voltage panel in simulated low earth orbit plasma

NASA Technical Reports Server (NTRS)

Mccox, J. E.; Konradi, A.

1979-01-01

A large (1m x 10m) flat surface of conductive material was biased to high voltage (+ or - 3000 V) to simulate the behavior of a large solar array in low earth orbit. The model array was operated in a plasma environment of 1,000 to 1,000,000/cu cm, with sufficient free space around it for the resulting plasma sheaths to develop unimpeded for 5-10 meters into the surrounding plasma. Measurements of the resulting sheath thickness were obtained. The observed thickness varied approximately as V to the 3/4 power and N to the 1/2 power. This effect appears to limit total current leakage from the test array until sheath dimensions exceed about 1 meter. Total leakage current was also measured with the array.

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

2018-04-01

The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

Modelling and assessment of accidental oil release from damaged subsea pipelines.

PubMed

Li, Xinhong; Chen, Guoming; Zhu, Hongwei

2017-10-15

This paper develops a 3D, transient, mathematical model to estimate the oil release rate and simulate the oil dispersion behavior. The Euler-Euler method is used to estimate the subsea oil release rate, while the Eulerian-Lagrangian method is employed to track the migration trajectory of oil droplets. This model accounts for the quantitative effect of backpressure and hole size on oil release rate, and the influence of oil release rate, oil density, current speed, water depth and leakage position on oil migration is also investigated in this paper. Eventually, the results, e.g. transient release rate of oil, the rise time of oil and dispersion distance are determined by above-mentioned model, and the oil release and dispersion behavior under different scenarios is revealed. Essentially, the assessment results could provide a useful guidance for detection of leakage positon and placement of oil containment boom. Copyright © 2017 Elsevier Ltd. All rights reserved.

Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

NASA Astrophysics Data System (ADS)

Liu, Hui; Zhang, Zongjing; Luo, Weijun

2018-06-01

The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR <- 3.5 V), both of the two samples show good agreement with the surface leakage mechanism. The leakage current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

Influence of thermal aging on AC leakage current in XLPE insulation

NASA Astrophysics Data System (ADS)

Geng, Pulong; Song, Jiancheng; Tian, Muqin; Lei, Zhipeng; Du, Yakun

2018-02-01

Cross-linked polyethylene (XLPE) has been widely used as cable insulation material because of its excellent dielectric properties, thermal stability and solvent resistance. To understand the influence of thermal aging on AC leakage current in XLPE insulation, all XLPE specimens were aged in oven in temperature range from 120 °C to 150 °C, and a series of tests were conducted on these XLPE specimens in different aging stages to measure the characteristic parameters, such as complex permittivity, leakage current and complex dielectric modulus. In the experiments, the effects of thermal aging, temperature and frequency on the AC leakage current in XLPE insulation were studied by analyzing complex dielectric constant and dielectric relaxation modulus spectrum, the change of relaxation peak and activation energy. It has been found that the active part of leakage current increases sharply with the increase of aging degree, and the test temperature and frequency have an influence on AC leakage current but the influence of test temperature is mainly reflected in the low frequency region. In addition, it has been shown by the experiments that the reactive part of leakage current exhibits a strong frequency dependent characteristic in the testing frequency range from 10-2 Hz to 105 Hz, but the influence of test temperature and thermal aging on it is relatively small.

Gallium phosphide energy converters

NASA Technical Reports Server (NTRS)

Sims, P. E.; DiNetta, Louis C.; DuganCavanagh, K.; Goetz, M. A.

1996-01-01

Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

Leakage current-induced effects in the silicon microstrip and gas electron multiplier readout chain and their compensation method

NASA Astrophysics Data System (ADS)

Zubrzycka, W.; Kasinski, K.

2018-04-01

Leakage current flowing into the charge sensitive amplifier (CSA) is a common issue in many radiation detection systems as it can increase overall system noise, shift a DC baseline or even lead a recording channel to instability. The commonly known leakage current contributor is a detector, however other system components like wires or an input protection circuit may become a serious problem. Compensation of the leakage current resulting from the electrostatic discharge (ESD) protection circuit by properly sizing its components is possible only for a narrow temperature range. Moreover, the leakage current from external sources can be significantly larger. Many applications, especially High Energy Physics (HEP) experiments, require a fast baseline restoration for high input hit rates by applying either a low-value feedback resistor or a high feedback resistance combined with a pulsed reset circuit. Leakage current flowing in the feedback in conjunction with a large feedback resistance supplied with a pulsed reset results in a significant voltage offset between the CSA input and output which can cause problems (e.g. fake hits or instability). This paper shows an issue referred to the leakage current of the ESD protection circuit flowing into the input amplifier. The following analysis and proposed solution is a result of the time and energy readout ASIC project realization for the Compressed Baryonic Matter (CBM) experiment at FAIR (Facility for Antiproton and Ion Research) in Darmstadt, Germany. This chip is purposed to work with microstrip and gaseous detectors, with high average input pulses frequencies (250 kHit/s per channel) and the possibility to process input charge of both polarities. We present measurements of the test structure fabricated in UMC 180 nm technology and propose a solution addressing leakage current related issues. This work combines the leakage current compensation capabilities at the CSA level with high, controllable value of the amplifier feedback resistor independent of the leakage current level and polarity. The simulation results of the double, switchable, Krummenacher circuit-based feedback application in the CSA with a pulsed reset functionality are presented.

Light intensity-voltage correlations and leakage-current excess noise in a single-mode semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurin, I.; Bramati, A.; Giacobino, E.

2005-09-15

Semiconductor lasers are particularly well suited for the implementation of pump-noise suppression, yielding a reduction of the intensity noise in the laser. In this simple picture, the maximal amount of squeezing is equal to the quantum efficiency. However, experimental results on intensity noise reduction by pump-noise suppression are usually above this limit. This discrepancy suggests that additional noise sources must be involved. Here we successful y interpret the full noise behavior of a single-mode laser diode far above threshold by considering two excess noise sources: the leakage current fluctuations across the laser and the Petermann excess noise. We have estimatedmore » the contribution of each noise source using the results of the correlations between the laser output intensity noise and the voltage fluctuations across the laser diode (light-voltage correlations) and obtained good agreement between our theory and experimental results.« less

Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

NASA Astrophysics Data System (ADS)

Mangasa Simanjuntak, Firman; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-09-01

We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 104 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.

Non-Ideal Properties of Gallium Nitride Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Shan, Qifeng

The spectacular development of gallium nitride (GaN) based light-emitting diodes (LEDs) in recent years foreshadows a new era for lighting. There are still several non-ideal properties of GaN based LEDs that hinder their widespread applications. This dissertation studies these non-ideal properties including the large reverse leakage current, large subthreshold forward leakage current, an undesired parasitic cyan luminescence and high-concentration deep levels in GaInN blue LEDs. This dissertation also studies the thermal properties of GaInN LEDs. Chapter 1 gives a brief introduction of non-ideal properties of GaN based LEDs. The leakage current of GaN based LEDs, defects in epitaxially grown GaN devices, and doping problems of p-type GaN materials are discussed. The transient junction temperature measurement technique for GaN based LEDs is introduced. The leakage current of an LED includes the subthreshold forward leakage current and the reverse leakage current. The leakage current of GaN based LEDs affects the reliability, electrostatic discharge resilience, and sub-threshold power consumption. In Chapter 2, the reverse leakage current of a GaInN LED is analyzed by temperaturedependent current-voltage measurements. At low temperature, the reverse leakage current is attributed to the variable-range-hopping conduction. At high temperature, the reverse leakage current is attributed to a thermally-assisted multi-step tunneling. The thermal activation energies (95 meV ~ 162 meV), extracted from the Arrhenius plot for the reverse current in the high-temperature range, indicate a thermally activated tunneling process. Additional room-temperature capacitance-voltage (C-V) measurements are performed to obtain information on the depletion width and doping concentration of the LED. The average internal electric field is estimated by the C-V measurements. The strong internal electric field enhances the thermal emission of electrons in the thermally-assisted multi-step tunneling process. Another problem of GaInN blue LEDs is the undesired parasitic cyan emission band. The undesired parasitic emission band strongly influence the electrical and optical properties of GaInN blue LEDs including the subthreshold forward leakage current and the color purity of the emission. In Chapter 3 , GaInN blue LEDs emitting at 445 nm with a parasitic cyan (blue-green) emission band (480 nm), which dominates the emission spectrum at low injection current, are analyzed. Photoluminescence using resonant optical excitation shows that the cyan emission originates from the active region of the LED. The current- and excitation-density-dependent blue-to-cyan intensity ratio reveals that the cyan emission is due to a transition from the conduction band to a Mg acceptor having diffused into the last-grown quantum well of the active region. The Mg in the active region provides an additional carrier-transport path, and therefore can explain the high subthreshold forward leakage current that is measured in these LEDs. Deep levels in GaN-based materials strongly affect the electrical and optical properties of GaN-based LEDs. Chapter 4 describes the basic principle and the setup of a deep-level transient spectroscopy (DLTS) measurement system. This DLTS system is used to determine the concentration and thermal activation energy of deep levels in the depletion region of the GaInN LED. Two types of hole traps in the n-type side of the depletion region are observed in the DLTS measurement. The thermal activation energies of these two types of hole traps are compared with the results reported in literature. The hole trap associated with the major DLTS peak with a thermal activation energy of 0.80 eV is presumably related to the “yellow luminescence band”. Self-heating of LEDs is an important issue that affects the efficiency and reliability. In Chapter 5, the thermal properties, including thermal time constants, of GaN LEDs are analyzed. The transient-junction-temperature behavior of unpackaged LED chips is described by a single time constant, which is the product of a thermal resistance Rth and a thermal capacitance Cth. Furthermore, a multistage RthCth thermal model for packaged LEDs is developed. The transient response of the junction temperature of LEDs after the power is switched on or switched off can be described by a multi-exponential function. Each time constant of this function is approximately the product of a thermal resistance, Rth, and a thermal capacitance, Cth. The transient junction temperature after the power is switched off is measured for a high-power flip-chip LED by the forward-voltage method. A two-stage RthCth model is used to analyze the thermal properties of the packaged LED. Two time constants, 2.72 ms and 18.7 ms are extracted from the junction temperature decay measurement and attributed to the thermal time constant of the LED GaN / sapphire chip and LED Si submount, respectively.

Groundwater response to leakage of surface water through a thick vadose zone in the middle reaches area of Heihe River Basin, in China

NASA Astrophysics Data System (ADS)

Wang, X.-S.; Ma, M.-G.; Li, X.; Zhao, J.; Dong, P.; Zhou, J.

2009-12-01

The behavior of groundwater response to leakage of surface water in the middle reaches area of Heihe River Basin is significantly influenced by a thick vadose zone. The variation of groundwater level is a result of two recharge events corresponding to leakage of Heihe River and irrigation water with different delay time. A nonlinear leakage model is developed to calculate the monthly leakage of Heihe River in considering changes of streamflow, river stage and agricultural water utilization. Numerical modeling of variable saturated flow is carried out to investigate the general behaviors of leakage-recharge conversion through a thick vadose zone. It is found that the variable recharge can be approximated by simple reservoir models for both leakage under a river and leakage under an irrigation district but with different delay-time and recession coefficient. A triple-reservoir model of relationship between surface water, vadose zone and groundwater is developed. It reproduces the in situ water table movement during 1989-2006 with variable streamflow of Heihe River and agricultural water utilization. The model is applied to interpret groundwater dynamics during 2007-2008 that observed in the Watershed Airborne Telemetry Experimental Research (WATER).

Aero-thermal performances of leakage flows injection from the endwall slot in linear cascade of high-pressure turbine

NASA Astrophysics Data System (ADS)

Ghopa, Wan Aizon W.; Harun, Zambri; Funazaki, Ken-ichi; Miura, Takemitsu

2015-02-01

The existence of a gap between combustor and turbine endwall in the real gas turbine induces to the leakages phenomenon. However, the leakages could be used as a coolant to protect the endwall surfaces from the hot gas since it could not be completely prevented. Thus, present study investigated the potential of leakage flows as a function of film cooling. In present study, the flow field at the downstream of high-pressure turbine blade has been investigated by 5-holes pitot tube. This is to reveal the aerodynamic performances under the influenced of leakage flows while the temperature measurement was conducted by thermochromic liquid crystal (TLC). Experimental has significantly captured theaerodynamics effect of leakage flows near the blade downstream. Furthermore, TLC measurement illustrated that the film cooling effectiveness contours were strongly influenced by the secondary flows behavior on the endwall region. Aero-thermal results were validated by the numerical simulation adopted by commercial software, ANSYS CFX 13. Both experimental and numerical simulation indicated almost similar trendinaero and also thermal behavior as the amount of leakage flows increases.

Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

NASA Astrophysics Data System (ADS)

Swami, Yashu; Rai, Sanjeev

2017-02-01

The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

Simulation of leakage current measurement on medical devices using helmholtz coil configuration with different current flow

NASA Astrophysics Data System (ADS)

Sutanto, E.; Chandra, F.; Dinata, R.

2017-05-01

Leakage current measurement which can follow IEC standard for medical device is one of many challenges to be answered. The IEC 60601-1 has defined that the limit for a leakage current for Medical Device can be as low as 10 µA and as high as 500 µA, depending on which type of contact (applied part) connected to the patient. Most people are using ELCB (Earth-leakage circuit breaker) for safety purpose as this is the most common and available safety device in market. One type of ELCB devices is RCD (Residual Current Device) and this RCD type can measure the leakage current directly. This work will show the possibility on how Helmholtz Coil Configuration can be made to be like the RCD. The possibility is explored by comparing the magnetic field formula from each device, then it proceeds with a simulation using software EJS (Easy Java Simulation). The simulation will make sure the concept of magnetic field current cancellation follows the RCD concept. Finally, the possibility of increasing the measurement’s sensitivity is also analyzed. The sensitivity is needed to see the possibility on reaching the minimum leakage current limit defined by IEC, 0.01mA.

Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang

2007-12-01

This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

PubMed

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-05-02

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors

PubMed Central

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-01-01

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components. PMID:28468324

A Passive EMI Filter with Access to the Ungrounded Motor Neutral Line-Its Effect on Eliminating Leakage Current from the Inverter Heat Sink-

NASA Astrophysics Data System (ADS)

Doumoto, Takafumi; Akagi, Hirofumi

This paper deals with a leakage current flowing out of the heat sink of a voltage-source PWM inverter. The heat-sink leakage current is caused by a steep change in the common-mode voltage produced by the inverter. It flows through parasitic capacitors between the heat sink and power semiconductor devices when no EMI filter is connected. Experimental results reveal that the heat-sink leakage current flows not into the supply side, but into the motor side. These understandings succeed in describing an equivalent common-mode circuit taking the parasitic capacitors into account. The authors have proposed a passive EMI filter that is unique in access to the ungrounded motor neutral line. It is discussed from this equivalent circuit that the passive EMI filter is effective in preventing the leakage current from flowing. Moreover, installation of another small-sized common-mode inductor at the ac side of the diode rectifier prevents the leakage current from flowing into the supply side. Experimental results obtained from a 200-V, 3.7-kW laboratory system confirm the effectiveness and viability of the EMI filter.

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

NASA Astrophysics Data System (ADS)

Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi; Nagamatsu, Kentaro; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Sugawara, Yoshihiro; Yao, Yong-Zhao; Ishikawa, Yukari

2018-04-01

Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

Simulation of cryogenic turbopump annular seals

NASA Astrophysics Data System (ADS)

Palazzolo, Alan B.

1992-12-01

The goal of the current work is to develop software that can accurately predict the dynamic coefficients, forces, leakage and horsepower loss for annular seals which have a potential for affecting the rotordynamic behavior of the pumps. The fruit of last year's research was the computer code SEALPAL which included capabilities for linear tapered geometry, Moody friction factor and inlet pre-swirl. This code produced results which in most cases compared very well with check cases presented in the literature. TAMUSEAL Icode, which was written to improve SEALPAL by correcting a bug and by adding more accurate integration algorithms and additional capabilities, was then used to predict dynamic coefficients and leakage for the NASA/Pratt and Whitney Alternate Turbopump Development (ATD) LOX Pump's seal.

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Sang, Liwen; Ren, Bing; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Tanaka, Atsushi; Cho, Yujin; Harada, Yoshitomo; Nabatame, Toshihide; Sekiguchi, Takashi; Usami, Shigeyoshi; Honda, Yoshio; Amano, Hiroshi

2017-09-01

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

All-carbon sp-sp2 hybrid structures: Geometrical properties, current rectification, and current amplification

PubMed Central

Zhang, Zhenhua; Zhang, Junjun; Kwong, Gordon; Li, Ji; Fan, Zhiqiang; Deng, Xiaoqing; Tang, Guiping

2013-01-01

All-carbon sp-sp2 hybrid structures comprised of a zigzag-edged trigonal graphene (ZTG)and carbon chains are proposed and constructed as nanojunctions. It has been found that such simple hybrid structures possess very intriguing propertiesapp:addword:intriguing. The high-performance rectifying behaviors similar to macroscopic p-n junction diodes, such as a nearly linear positive-bias I-V curve (metallic behavior), a very small leakage current under negative bias (insulating behavior), a rather low threshold voltage, and a large bias region contributed to a rectification, can be predicted. And also, a transistor can be built by such a hybrid structure, which can show an extremely high current amplification. This is because a sp-hybrid carbon chain has a special electronic structure which can limit the electronic resonant tunneling of the ZTG to a unique and favorable situation. These results suggest that these hybrid structures might promise importantly potential applications for developing nano-scale integrated circuits. PMID:23999318

Improved modeling on the RF behavior of InAs/AlSb HEMTs

NASA Astrophysics Data System (ADS)

Guan, He; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen

2015-12-01

The leakage current and the impact ionization effect causes a drawback for the performance of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this paper, the conventional HEMT small-signal model was enhanced to characterize the RF behavior for InAs/AlSb HEMTs. The additional gate leakage current induced by the impact ionization was modeled by adding two resistances RGh1 and RGh2 shunting the Cgs-Ri and Cgd-Rj branches, respectively, and the ionized-drain current was characterized by an additional resistance Rmi parallel with the output resistance Rds, meanwhile the influence of the impact ionization on the transconductance was modeled by an additional current source gmi controlled by Vgs. The additional inductance, evaluated as a function of f(ω, R), was introduced to characterize the frequency dependency of impact ionization by using the impact ionization effective rate 1/τi and a new frequency response rate factor n, which guaranteed the enhanced model reliable for a wide frequency range. As a result, the enhanced model achieved good agreement with the measurements of the S-parameters and Y-parameters for a wide frequency range, moreover, the simulated results of the stability factor K, the cutoff frequency fT, the maximum frequency of oscillation fmax, and the unilateral Mason's gain U were estimated to approach the experimental results with a high degree.

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Fan, Shuang; Chen, Yong-He; Kang, Di; Zhang, Jian-Kun; Wang, Chong; Mo, Jiang-Hui; Li, Liang; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-02-01

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), the 111 Project, China (Grant No. B12026), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051325002).

Fabrication and Benchmarking of a Stratix V FPGA with Monolithic Integrated Microfluidic Cooling

DTIC Science & Technology

2017-03-01

run. The output from all cores were monitored through the Altera Signaltap tool in order to detect glitches which occurred in the output...dependence on temperature, and static/ leakage power, which comes from several components, such as subthreshold leakage , gate leakage , and reverse bias 220...junction current. Subthreshold leakage current tends to be the most significant temperature dependent component of the power [6,7] and is given by

Conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage.

PubMed

Kano, Shinya; Fujii, Minoru

2017-03-03

We study the conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage. Heat leakage current from a hot electrode to a cold electrode is taken into account in the analysis of the harvester operation. Modeling of electrical output indicates that a maximum heat leakage current is not negligible because it is larger than that of the heat current harvested into electrical power. A reduction of heat leakage is required in this energy harvester in order to obtain efficient heat-to-electrical conversion. Multiple energy levels of a quantum dot can increase the output power of the harvester. Heavily doped colloidal semiconductor quantum dots are a possible candidate for a quantum-dot monolayer in the energy harvester to reduce heat leakage, scaling down device size, and increasing electrical output via multiple discrete energy levels.

FELERION: a new approach for leakage power reduction

NASA Astrophysics Data System (ADS)

R, Anjana; Somkuwar, Ajay

2014-12-01

The circuit proposed in this paper simultaneously reduces the sub threshold leakage power and saves the state of art aspect of the logic circuits. Sleep transistors and PMOS-only logic are used to further reduce the leakage power. Sleep transistors are used as the keepers to reduce the sub threshold leakage current providing the low resistance path to the output. PMOS-only logic is used between the pull up and pull down devices to mitigate the leakage power further. Our proposed fast efficient leakage reduction circuit not only reduces the leakage current but also reduces the power dissipation. Power and delay are analyzed at the 32 nm BSIM4 model for a chain of four inverters, NAND, NOR and ISCAS-85 c17 benchmark circuits using DSCH3 and the Microwind tool. The simulation results reveal that our proposed approach mitigates leakage power by 90%-94% as compared to the conventional approach.

The ``Leakage Current Sentinel'': A novel plug-in socket device for online biomedical equipment electrical safety surveillance

NASA Astrophysics Data System (ADS)

Cappa, Paolo; Marinozzi, Franco; Sciuto, Salvatore Andrea

2000-07-01

The Leakage Current Sentinel (LCS) has been designed and implemented for the detection of hazardous situations caused by dangerous earth leakage current values in intensive care units and operating theaters. The device, designed and manufactured with full compliance of the high risk environment requirements, is able to monitor online the earth leakage current and detect ground wire faults. Operation utilizes a microammeter with an overall sensitivity of 2.5×104 V/A. In order to assure the reliability of the device in providing alarm signals, the simultaneous presence of absorbed power current is monitored by means of another ammeter with decreased sensitivity (3.0 V/A). The measured root mean square current values are compared with reference values in order to send signals to NAND and OR complementary metal-oxide-semiconductor gates to enable audible and visible alarms according to the possible hazardous cases examined in the article. The final LCS packaging was shaped as a wall socket adapter for common electromedical device power cord plugs, with particular attention to minimizing its dimensions and to provide analog voltage outputs for both measured leakage and power currents, in order to allow automatic data acquisition and computerized hazardous situation management. Finally, a personal computer based automatic measuring system has been configured to simultaneously monitor several LCSs installed in the same intensive care unit room and, as a consequence, to distinguish different hazardous scenarios and provide an adequate alert to the clinical personnel whose final decision is still required. The test results confirm the effectiveness and reliability of the LCS in giving an alert in case of leakage current anomalous values, either in case of a ground fault or in case of a dangerous leakage current.

Investigation of mercury thruster isolators. [service life

NASA Technical Reports Server (NTRS)

Mantenieks, M. A.

1973-01-01

Mercury ion thruster isolator lifetime tests were performed using different isolator materials and geometries. Tests were performed with and without the flow of mercury through the isolators in an oil diffusion pumped vacuum facility and cryogenically pumped bell jar. The onset of leakage current in isolators tested occurred in time intervals ranging from a few hours to many hundreds of hours. In all cases, surface contamination was responsible for the onset of leakage current and subsequent isolator failure. Rate of increase of leakage current and the leakage current level increased approximately exponentially with isolator temperature. Careful attention to shielding techniques and the elimination of sources of metal oxides appear to have eliminated isolator failures as a thruster life limiting mechanism.

Groundwater response to leakage of surface water through a thick vadose zone in the middle reaches area of Heihe River Basin, in China

NASA Astrophysics Data System (ADS)

Wang, X.-S.; Ma, M.-G.; Li, X.; Zhao, J.; Dong, P.; Zhou, J.

2010-04-01

The behavior of groundwater response to leakage of surface water in the middle reaches area of Heihe River Basin is significantly influenced by a thick vadose zone. The groundwater regime is a result of two recharge events due to leakage of Heihe River and irrigation water with different delay time. A nonlinear leakage model is developed to calculate the monthly leakage of Heihe River in considering changes of streamflow, river stage and agricultural water utilization. Numerical modeling of variable saturated flow is carried out to investigate the general behaviors of leakage-recharge conversion through a thick vadose zone. It is found that the recharge pattern can be approximated by simple reservoir models of leakages under a river and under an irrigation district with different delay-time and recession coefficient. A triple-reservoir model of relationship between surface water, vadose zone and groundwater is developed. It reproduces the groundwater regime during 1989-2006 with variable streamflow of Heihe River and agricultural water utilization. The model is applied to interpret changes of groundwater level during 2007-2008 that observed in the Watershed Airborne Telemetry Experimental Research (WATER).

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

NASA Astrophysics Data System (ADS)

Li, Jeng-Ting; Tsai, Ho-Lin; Lai, Wei-Yao; Hwang, Weng-Sing; Chen, In-Gann; Chen, Jen-Sue

2018-04-01

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

SENSITIVITY OF THE HOUSE PRESSURE TEST FOR DUCT LEAKAGE TO VARIATIONS IN THE DISTRIBUTION OF AIR LEAKAGE IN THE HOUSE ENVELOPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

ANDREWS,J.W.

1998-12-01

The house pressure test for air leakage in ducts calculates the signed difference between the supply and return leakage from the response of the air pressure in the house to operation of the system fan. The currently accepted version of this calculation was based on particular assumptions about how the house envelope leakage is distributed between the walls, ceiling, and floor. This report generalizes the equation to account for an arbitrary distribution of envelope leakage. It concludes that the currently accepted equation is usually accurate to within {+-}5%, but in a small proportion of cases the results may diverge bymore » 50% or more.« less

Mechanisms of mineral membrane fouling growth modulated by pulsed modes of current during electrodialysis: evidences of water splitting implications in the appearance of the amorphous phases of magnesium hydroxide and calcium carbonate.

PubMed

Cifuentes-Araya, Nicolás; Astudillo-Castro, Carolina; Bazinet, Laurent

2014-07-15

Experiments revealed the fouling nature evolutions along different electrodialysis (ED) trials, and how it disappears when current pulsation acts repetitively on the interfaces of ion-exchange membranes (IEMs). Fouling was totally controlled on the diluate side of cation-exchange membrane (CEM) by the repetitive pulsation frequency of the higher on-duty ratios applied. They created steady water splitting proton-barriers that neutralized OH(-) leakage through the membrane, decreasing the interfacial pH, and fouling of the concentrate side. The anion-exchange membrane (AEM) on the diluate side was similarly protected, but it was fouled once water splitting OH(-) generation became either intense enough or excessively weak. Interestingly, amorphous magnesium hydroxide (AMH) stemmed on the CEM-diluate side from brucite under intense water splitting OH(-) generation, and/or strong OH(-) leakage electromigration through the membrane. Water dissociation and overlimiting current regimes triggered drastic water molecule removal from crystal lattices through an accelerated cascade water splitting reaction. Also, amorphous calcium carbonate (ACC) appeared on CEM under intense water splitting reaction, and disappeared once intense OH(-) leakage was allowed by the water splitting proton-barrier dissipation. Our findings have implications for membrane fouling control, as well as for the understanding of the growth behavior of CaCO3 and Mg(OH)2 species on electromembrane interfaces. Copyright © 2014 Elsevier Inc. All rights reserved.

Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2010-01-01

Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash

NASA Astrophysics Data System (ADS)

Zhang, Yu; Jin, Lei; Jiang, Dandan; Zou, Xingqi; Zhao, Zhiguo; Gao, Jing; Zeng, Ming; Zhou, Wenbin; Tang, Zhaoyun; Huo, Zongliang

2018-03-01

In order to optimize program disturbance characteristics effectively, a characterization approach that measures top select transistor (TSG) leakage from bit-line is proposed to quantify TSG leakage under program inhibit condition in 3D NAND flash memory. Based on this approach, the effect of Vth modulation of two-cell TSG on leakage is evaluated. By checking the dependence of leakage and corresponding program disturbance on upper and lower TSG Vth, this approach is validated. The optimal Vth pattern with high upper TSG Vth and low lower TSG Vth has been suggested for low leakage current and high boosted channel potential. It is found that upper TSG plays dominant role in preventing drain induced barrier lowering (DIBL) leakage from boosted channel to bit-line, while lower TSG assists to further suppress TSG leakage by providing smooth potential drop from dummy WL to edge of TSG, consequently suppressing trap assisted band-to-band tunneling current (BTBT) between dummy WL and TSG.

Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotani, Junji, E-mail: kotani.junji-01@jp.fujitsu.com; Yamada, Atsushi; Ishiguro, Tetsuro

2016-04-11

This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 10{sup 4 }cm{sup −2} and 1.2 × 10{sup 9 }cm{sup −2} by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, andmore » a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel–Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.« less

Characterization of ultrathin insulators in CMOS technology: Wearout and failure mechanisms due to processing and operation

NASA Astrophysics Data System (ADS)

Okandan, Murat

In the CMOS technology the gate dielectric is the most critical layer, as its condition directly dictates the ultimate performance of the devices. In this thesis, the wear-out and failure mechanisms in ultra-thin (around 50A and lower) oxides are investigated. A new degradation phenomenon, quasi-breakdown (or soft-breakdown), and the annealing and stressing behavior of devices after quasi-breakdown are considered in detail. Devices that are in quasi-breakdown continue to operate as switches, but the gate leakage current is two orders of magnitude higher than the leakage in healthy devices and the stressing/annealing behavior of the devices are completely altered. This phenomenon is of utmost interest, since the reduction in SiO2 dielectric thickness has reached its physical limits, and the quasi-breakdown behavior is seen to dominate as a failure mode in this regime. The quasi-breakdown condition can be brought on by stresses during operation or processing. To further study this evolution through stresses and anneals, cyclic current-voltage (I-V) measurement has been further developed and utilized in this thesis. Cyclic IV is a simple and fast, two terminal measurement technique that looks at the transient current flowing in an MOS system during voltage sweeps from accumulation to inversion and back. During these sweeps, carrier trapping/detrapping, generation and recombination are observed. An experimental setup using a fast electrometer and analog to digital conversion (A/D) card and the software for control of the setup and data analysis were also developed to gain further insight into the detailed physics involved. Overall, the crucial aspects of wear-out and quasi-breakdown of ultrathin dielectrics, along with the methods for analyzing this evolution are presented in this thesis.

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

PubMed

Oh, S K; Song, C G; Jang, T; Kim, Kwang-Choong; Jo, Y J; Kwak, J S

2013-03-01

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

Design optimization of high frequency transformer with controlled leakage inductance for current fed dual active bridge converter

NASA Astrophysics Data System (ADS)

Jung, Tae-Uk; Kim, Myung-Hwan; Yoo, Jin-Hyung

2018-05-01

Current fed dual active bridge converters for photovoltaic generation may typically require a given leakage or extra inductance in order to provide proper control of the currents. Therefore, the many researches have been focused on the leakage inductance control of high frequency transformer to integrate an extra inductor. In this paper, an asymmetric winding arrangement to get the controlled leakage inductance for the high frequency transformer is proposed to improve the efficiency of the current fed dual active bridge converter. In order to accurate analysis, a coupled electromagnetic analysis model of transformer connected with high frequency switching circuit is used. A design optimization procedure for high efficiency is also presented using design analysis model, and it is verified by the experimental result.

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

NASA Astrophysics Data System (ADS)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stern, M.B.; Brody, E.; Sowell, B.

1987-12-15

Direct measurements of homojunction and heterojunction carrier leakage currents in InGaAsP/InP buried heterostructure lasers have been made by monitoring the electroluminescence (EL) at 0.96 ..mu..m in the InP confinement layers. These EL measurements show directly, for the first time, a correlation between homojunction leakage currents and the sublinearity in the 1.3-..mu..m light output-current characteristic. The observed decrease in the 0.96-..mu..m intensity with increasing p-dopant concentration is a direct confirmation that heterojunction leakage is reduced when the doping level in the p-InP confinement layer is increased.

Numerical Studies of Fluid Leakage from a Geologic DisposalReservoir for CO2 Show Self-Limiting Feedback between Fluid Flow and HeatTransfer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pruess, Karsten

2005-03-22

Leakage of CO2 from a hypothetical geologic storage reservoir along an idealized fault zone has been simulated, including transitions between supercritical, liquid, and gaseous CO2. We find strong non-isothermal effects due to boiling and Joule-Thomson cooling of expanding CO2. Leakage fluxes are limited by limitations in conductive heat transfer to the fault zone. The interplay between multiphase flow and heat transfer effects produces non-monotonic leakage behavior.

A comparison of experimental and theoretical results for leakage, pressure distribution, and rotordynamic coefficients for annular gas seals

NASA Technical Reports Server (NTRS)

Nicks, C. O.; Childs, D. W.

1984-01-01

The importance of seal behavior in rotordynamics is discussed and current annular seal theory is reviewed. A Nelson's analytical-computational method for determining rotordynamic coefficients for this type of compressible-flow seal is outlined. Various means for the experimental identification of the dynamic coefficients are given, and the method employed at the Texas A and M University (TAMU) test facility is explained. The TAMU test apparatus is described, and the test procedures are discussed. Experimental results, including leakage, entrance-loss coefficients, pressure distributions, and rotordynamic coefficients for a smooth and a honeycomb constant-clearance seal are presented and compared to theoretical results from Nelson's analysis. The results for both seals show little sensitivity to the running speed over the test range. Agreement between test results and theory for leakage through the seal is satisfactory. Test results for direct stiffness show a greater sensitivity to fluid pre-rotation than predicted. Results also indicate that the deliberately roughened surface of the honeycomb seal provides improved stability versus the smooth seal.

Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

NASA Astrophysics Data System (ADS)

Podgornyi, Yu. V.; Vorotilov, K. A.; Sigov, A. S.

2018-03-01

Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p-n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2014 CFR

2014-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2013 CFR

2013-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2012 CFR

2012-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

DOEpatents

Hoffbauer, Mark A.; Prettyman, Thomas H.

2001-01-01

Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

NASA Technical Reports Server (NTRS)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

Significantly enhanced ferroelectricity and magnetic properties in (Sr{sub 0.5}Ca{sub 0.5})TiO{sub 3}-modified BiFeO{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Juan; Liu, Xiao Qiang, E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn; Chen, Xiang Ming, E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn

2015-05-07

BiFeO{sub 3} multiferroic ceramics were modified by introducing (Sr{sub 0.5}Ca{sub 0.5})TiO{sub 3} to form solid solutions. The single phase structure was easy to be obtained in Bi{sub 1−x}(Sr{sub 0.5}Ca{sub 0.5}){sub x}Fe{sub 1−x}Ti{sub x}O{sub 3} (x = 0.2, 0.25, 0.3, and 0.4) solid solutions. Rietveld refinement of X-ray diffraction data revealed a transition from rhombohedral R3c (x = 0.2, 0.25, and 0.3) to orthorhombic Pnma (x = 0.4). Current density-field (J-E) characteristics indicated that the leakage current density was reduced by three orders of magnitude in Bi{sub 1−x}(Sr{sub 0.5}Ca{sub 0.5}){sub x}Fe{sub 1−x}Ti{sub x}O{sub 3} ceramics. Both the ferroelectricity and magnetic properties were significantly enhanced in the presentmore » solid solutions. P-E hysteresis loop measurements with dynamic leakage current compensation methods showed the significantly enhanced ferroelectric properties for x = 0.25 and 0.3 and the paraelectric behavior for x = 0.4. The best ferromagnetic characteristics were achieved in the composition of x = 0.25, where the saturated M-H loop was determined with M{sub r} = 34.8 emu/mol. The improvement of ferroelectricity was mainly due to the suppressed leakage current, and the enhanced magnetism originated from the partial substitution of Fe{sup 3+} by Ti{sup 4+}, which destroyed its previous spiral structure to allow the appearance of a macroscopic magnetization.« less

Channel length dependence of field-effect mobility of c-axis-aligned crystalline In-Ga-Zn-O field-effect transistors

NASA Astrophysics Data System (ADS)

Matsuda, Shinpei; Kikuchi, Erumu; Yamane, Yasumasa; Okazaki, Yutaka; Yamazaki, Shunpei

2015-04-01

Field-effect transistors (FETs) with c-axis-aligned crystalline In-Ga-Zn-O (CAAC-IGZO) active layers have extremely low off-state leakage current. Exploiting this feature, we investigated the application of CAAC-IGZO FETs to LSI memories. A high on-state current is required for the high-speed operation of these LSI memories. The field-effect mobility μFE of a CAAC-IGZO FET is relatively low compared with the electron mobility of single-crystal Si (sc-Si). In this study, we measured and calculated the channel length L dependence of μFE for CAAC-IGZO and sc-Si FETs. For CAAC-IGZO FETs, μFE remains almost constant, particularly when L is longer than 0.3 µm, whereas that of sc-Si FETs decreases markedly as L shortens. Thus, the μFE difference between both FET types is reduced by miniaturization. This difference in μFE behavior is attributed to the different susceptibilities of electrons to phonon scattering. On the basis of this result and the extremely low off-state leakage current of CAAC-IGZO FETs, we expect high-speed LSI memories with low power consumption.

Leakage Currents and Gas Generation in Advanced Wet Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Currently, military grade, established reliability wet tantalum capacitors are among the most reliable parts used for space applications. This has been achieved over the years by extensive testing and improvements in design and materials. However, a rapid insertion of new types of advanced, high volumetric efficiency capacitors in space systems without proper testing and analysis of degradation mechanisms might increase risks of failures. The specifics of leakage currents in wet electrolytic capacitors is that the conduction process is associated with electrolysis of electrolyte and gas generation resulting in building up of internal gas pressure in the parts. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. In this work, in Part I, leakages currents in various types of tantalum capacitors have been analyzed in a wide range of voltages, temperatures, and time under bias. Gas generation and the level of internal pressure have been calculated in Part II for different case sizes and different hermeticity leak rates to assess maximal allowable leakage currents. Effects related to electrolyte penetration to the glass seal area have been studied and the possibility of failures analyzed in Part III. Recommendations for screening and qualification to reduce risks of failures have been suggested.

The concept of leakage in threat assessment.

PubMed

Meloy, J Reid; O'Toole, Mary Ellen

2011-01-01

Leakage in the context of threat assessment is the communication to a third party of an intent to do harm to a target. Third parties are usually other people, but the means of communication vary, and include letters, diaries, journals, blogs, videos on the internet, emails, voice mails, and other social media forms of transmission. Leakage is a type of warning behavior that typically infers a preoccupation with the target, and may signal the research, planning, and implementation of an attack. Nomothetic data suggest that leakage occurs in a majority of cases of attacks on and assassinations of public figures, adult mass murders, adolescent mass murders, and school or campus shootings: very low-frequency, but catastrophic acts of intended and targeted violence. Idiographic or case data illustrate the various permutations of leakage. We discuss the operational importance of the concept, place it in the context of other warning behaviors, emphasize the need for further research, and outline risk management strategies for the mitigation of such acts of violence in both law enforcement and clinical mental health settings. Copyright © 2011 John Wiley & Sons, Ltd.

Thermal effects in two-phase flow through face seals. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Basu, Prithwish

1988-01-01

When liquid is sealed at high temperature, it flashes inside the seal due to pressure drop and/or viscous heat dissipation. Two-phase seals generally exhibit more erratic behavior than their single phase counterparts. Thermal effects, which are often neglected in single phase seal analyses, play an important role in determining seal behavior under two-phase operation. It is necessary to consider the heat generation due to viscous shear, conduction into the seal rings and convection with the leakage flow. Analytical models developed work reasonably well at the two extremes - for low leakage rates when convection is neglected and for higher leakage rates when conduction is neglected. A preliminary model, known as the Film Coefficient Model, is presented which considers conduction and convection both, and allows continuous boiling over an extended region unlike the previous low-leakage rate model which neglects convection and always forces a discrete boiling interface. Another simplified, semi-analytical model, based on the assumption of isothermal conditions along the seal interafce, has been developed for low leakage rates. The Film Coefficient Model may be used for more accurate and realistic description.

Distribution of leakage currents in the cylindrical and conical sections of the magnetically insulated transmission line of the Angara-5-1 facility in experiments with wire arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grabovski, E. V.; Gribov, A. N.; Samokhin, A. A.

2016-08-15

Current leakages in the magnetically insulated transmission lines (MITL) impose restrictions on the transmission of electromagnetic pulses to the load in high-power electrophysical facilities. The multimodule Angara-5-1 facility with an output electric power of up to 6 TW is considered. In this work, the experimental and calculated profiles of leakage currents in two sections of the line are compared when the eight-module facility is loaded by a wire array. The azimuthal distribution of the current in the cylindrical section of the MITL is also considered.

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

Flow Characteristics and Robustness of an Inclined Quad-vortex Range Hood

PubMed Central

CHEN, Jia-Kun; HUANG, Rong Fung

2014-01-01

A novel design of range hood, which was termed the inclined quad-vortex (IQV) range hood, was examined for its flow and containment leakage characteristics under the influence of a plate sweeping across the hood face. A flow visualization technique was used to unveil the flow behavior. Three characteristic flow modes were observed: convex, straight, and concave modes. A tracer gas detection method using sulfur hexafluoride (SF6) was employed to measure the containment leakage levels. The results were compared with the test data reported previously in the literature for a conventional range hood and an inclined air curtain (IAC) range hood. The leakage SF6 concentration of the IQV range hood under the influence of the plate sweeping was 0.039 ppm at a suction flow rate of 9.4 m3/min. The leakage concentration of the conventional range hood was 0.768 ppm at a suction flow rate of 15.0 m3/min. For the IAC range hood, the leakage concentration was 0.326 ppm at a suction flow rate of 10.9 m3/min. The IQV range hood presented a significantly lower leakage level at a smaller suction flow rate than the conventional and IAC range hoods due to its aerodynamic design for flow behavior. PMID:24583513

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Carpenter, M. S.; Melloch, Michael R.; Cooper, James A., Jr.

1991-01-01

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Local electronic and optical behavior of ELO a-plane GaN

NASA Astrophysics Data System (ADS)

Baski, A. A.; Moore, J. C.; Ozgur, U.; Kasliwal, V.; Ni, X.; Morkoc, H.

2007-03-01

Conductive atomic force microscopy (CAFM) and near-field optical microscopy (NSOM) were used to study a-plane GaN films grown via epitaxial lateral overgrowth (ELO). The ELO films were prepared by metal organic chemical vapor deposition on a patterned SiO2 layer with 4-μm wide windows, which was deposited on a GaN template grown on r-plane sapphire. The window regions of the coalesced ELO films appear as depressions with a high density of surface pits. At reverse bias below 12 V, very low uniform conduction (2 pA) is seen in the window regions. Above 20 V, a lower-quality sample shows localized sites inside the window regions with significant leakage, indicating a correlation between the presence of surface pits and leakage sites. Room temperature NSOM studies also suggest a greater density of surface terminated dislocations in the window regions, while wing regions explicitly show enhanced optical quality of the overgrown GaN. The combination of CAFM and NSOM data therefore indicates a correlation between the presence of surface pits, localized reverse-bias current leakage, and low PL intensity in the window regions.

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

2016-01-14

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage ismore » not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE PAGES

Miller, Mary A.; Tangyunyong, Paiboon; Edward I. Cole, Jr.

2016-01-12

In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increasedmore » leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

Analysis and modeling of leakage current sensor under pulsating direct current

NASA Astrophysics Data System (ADS)

Li, Kui; Dai, Yihua; Wang, Yao; Niu, Feng; Chen, Zhao; Huang, Shaopo

2017-05-01

In this paper, the transformation characteristics of current sensor under pulsating DC leakage current is investigated. The mathematical model of current sensor is proposed to accurately describe the secondary side current and excitation current. The transformation process of current sensor is illustrated in details and the transformation error is analyzed from multi aspects. A simulation model is built and a sensor prototype is designed to conduct comparative evaluation, and both simulation and experimental results are presented to verify the correctness of theoretical analysis.

Apparatus for detecting leakage of liquid sodium

DOEpatents

Himeno, Yoshiaki

1978-01-01

An apparatus for detecting the leakage of liquid sodium includes a cable-like sensor adapted to be secured to a wall of piping or other equipment having sodium on the opposite side of the wall, and the sensor includes a core wire electrically connected to the wall through a leak current detector and a power source. An accidental leakage of the liquid sodium causes the corrosion of a metallic layer and an insulative layer of the sensor by products resulted from a reaction of sodium with water or oxygen in the atmospheric air so as to decrease the resistance between the core wire and the wall. Thus, the leakage is detected as an increase in the leaking electrical current. The apparatus is especially adapted for use in detecting the leakage of liquid sodium from sodium-conveying pipes or equipment in a fast breeder reactor.

Numerical modeling of probe velocity effects for electromagnetic NDE methods

NASA Astrophysics Data System (ADS)

Shin, Y. K.; Lord, W.

The present discussion of magnetic flux (MLF) leakage inspection introduces the behavior of motion-induced currents. The results obtained indicate that velocity effects exist at even low probe speeds for magnetic materials, compelling the inclusion of velocity effects in MLF testing of oil pipelines, where the excitation level and pig speed are much higher than those used in the present work. Probe velocity effect studies should influence probe design, defining suitable probe speed limits and establishing training guidelines for defect-characterization schemes.

Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirch, J. D.; Chang, C.-C.; Boyle, C.

2015-04-13

By stepwise tapering, both the barrier heights and quantum-well depths in the active regions of 8.7–8.8 μm-emitting quantum-cascade-laser (QCL) structures, virtually complete carrier-leakage suppression is achieved. Such step-taper active-region-type QCLs possess, for 3 mm-long devices with high-reflectivity-coated back facets, threshold-current characteristic temperature coefficients, T{sub 0}, as high as 283 K and slope-efficiency characteristic temperature coefficients, T{sub 1}, as high as 561 K, over the 20–60 °C heatsink-temperature range. These high T{sub 0} and T{sub 1} values reflect at least a factor of four reduction in carrier-leakage current compared to conventional 8–9 μm-emitting QCLs. Room temperature, pulsed, threshold-current densities are 1.58 kA/cm{sup 2}; values comparable to those formore » 35-period conventional QCLs of similar injector-region doping level. Superlinear behavior of the light-current curves is shown to be the result of the onset of resonant extraction from the lower laser level at a drive level of ∼1.3× threshold. Maximum room-temperature slope efficiencies are 1.23 W/A; that is, slope efficiency per period values of 35 mW/A, which are 37%–40% higher than for same-geometry conventional 8–9 μm-emitting QCLs. Since the waveguide-loss coefficients are very similar, we estimate that the internal differential efficiency is at least 30% higher than in conventional QCLs. Such high internal differential efficiency values reflect the combined effect of nearly complete carrier-leakage suppression and high differential efficiency of the laser transition (∼90%), due to resonant extraction from the lower laser level.« less

Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

NASA Astrophysics Data System (ADS)

KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

2018-05-01

Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

Comparison of the Standard of Air Leakage in Current Metal Duct Systems in the World

NASA Astrophysics Data System (ADS)

Di, Yuhui; Wang, Jiqian; Feng, Lu; Li, Xingwu; Hu, Chunlin; Shi, Junshe; Xu, Qingsong; Qiao, Leilei

2018-01-01

Based on the requirements of air leakage of metal ducts in Chinese design standards, technical measures and construction standards, this paper compares the development history, the classification of air pressure levels and the air tightness levels of air leakage standards of current Chinese and international metal ducts, sums up the differences, finds shortage by investigating the design and construction status and access to information, and makes recommendations, hoping to help the majority of engineering and technical personnel.

Hydrophobicity and leakage current statistics of polymeric insulators long-term exposed to coastal contamination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soerqvist, T.; Vlastos, A.E.

1996-12-31

The hydrophobicity of polymeric insulators is crucial for their performance. This paper reports the hydrophobicity and the peak leakage current statistics of one porcelain, two ethylene-propylene-diene monomer (EPDM) and four silicone rubber (SIR) commercially available insulators. The insulators have been energized with 130 kV rms phase-to-ground AC voltage under identical outdoor conditions for more than seven years. The results presented show that under wet and polluted conditions the hydrophilic EPDM rubber insulators develop high leakage currents and substantial arcing. During a typical salt-storm the arcing amplitude of the EPDM rubber insulators is at least twice as high as that ofmore » the porcelain insulator. The SIR insulators, on the other hand, preserve a high degree of hydrophobicity after more than seven years in service and maintain very low leakage currents. However, the results show that during heavy salt contaminated conditions a highly stressed SIR insulator can temporarily lose its hydrophobicity and thereby develop considerable surface arcing.« less

Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2012-01-01

Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Portable leakage current alarm. 870.2640 Section 870.2640 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Portable leakage current alarm. 870.2640 Section 870.2640 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable...

Printed Circuit Board Surface Finish and Effects of Chloride Contamination, Electric Field, and Humidity on Corrosion Reliability

NASA Astrophysics Data System (ADS)

Conseil-Gudla, Hélène; Jellesen, Morten S.; Ambat, Rajan

2017-02-01

Corrosion reliability is a serious issue today for electronic devices, components, and printed circuit boards (PCBs) due to factors such as miniaturization, globalized manufacturing practices which can lead to process-related residues, and global usage effects such as bias voltage and unpredictable user environments. The investigation reported in this paper focuses on understanding the synergistic effect of such parameters, namely contamination, humidity, PCB surface finish, pitch distance, and potential bias on leakage current under different humidity levels, and electrochemical migration probability under condensing conditions. Leakage currents were measured on interdigitated comb test patterns with three different types of surface finish typically used in the electronics industry, namely gold, copper, and tin. Susceptibility to electrochemical migration was studied under droplet conditions. The level of base leakage current (BLC) was similar for the different surface finishes and NaCl contamination levels up to relative humidity (RH) of 65%. A significant increase in leakage current was found for comb patterns contaminated with NaCl above 70% to 75% RH, close to the deliquescent RH of NaCl. Droplet tests on Cu comb patterns with varying pitch size showed that the initial BLC before dendrite formation increased with increasing NaCl contamination level, whereas electrochemical migration and the frequency of dendrite formation increased with bias voltage. The effect of different surface finishes on leakage current under humid conditions was not very prominent.

Characterizing the freezing behavior of liposomes as a tool to understand the cryopreservation procedures.

PubMed

Siow, Lee Fong; Rades, Thomas; Lim, Miang Hoong

2007-12-01

Freezing behaviors of egg yolk l-alpha-phosphatidylcholine (EPC) and 1,2-dipalmitoyl-rac-glycero-3-phosphocholine (DPPC) large unilamellar vesicles (LUV) were quantitatively characterized in relation to freezing temperatures, cooling rates, holding time, presence of sodium chloride and phospholipid phase transition temperature. Cooling of the EPC LUV showed an abrupt increase in leakage of the encapsulated carboxyfluorescein (CF) between -5 degrees C and -10 degrees C, which corresponded with the temperatures of the extraliposomal ice formation at around -7 degrees C. For the DPPC LUV, CF leakage started at -10 degrees C, close to the temperature of the extraliposomal ice formation; followed by a subsequent rapid increase in leakage between -10 degrees C and -25 degrees C. Scanning electron microscopy showed that both of these LUV were freeze-concentrated and aggregated at sub-freezing temperatures. We suggest that the formation of the extraliposomal ice and the decrease of the unfrozen fraction causes freeze-injury and leakage of the CF. The degree of leakage, however, differs between EPC LUV and DPPC LUV that inherently vary in their phospholipid phase transition temperatures. With increasing holding time, the EPC LUV were observed to have higher leakage when they were held at -15 degrees C compared to at -30 degrees C whilst leakage of the DPPC LUV was higher when holding at -40 degrees C than at -15 degrees C and -50 degrees C. At slow cooling rates, osmotic pressure across the bilayers may cause an additional stress to the EPC LUV. The present work elucidates freeze-injury mechanisms of the phospholipid bilayers through the liposomal model membranes.

Module Hipot and ground continuity test results

NASA Technical Reports Server (NTRS)

Griffith, J. S.

1984-01-01

Hipot (high voltage potential) and module frame continuity tests of solar energy conversion modules intended for deployment into large arrays are discussed. The purpose of the tests is to reveal potentially hazardous voltage conditions in installed modules, and leakage currents that may result in loss of power or cause ground fault system problems, i.e., current leakage potential and leakage voltage distribution. The tests show a combined failure rate of 36% (69% when environmental testing is included). These failure rates are believed easily corrected by greater care in fabrication.

a High-Level Technique for Estimation and Optimization of Leakage Power for Full Adder

NASA Astrophysics Data System (ADS)

Shrivas, Jayram; Akashe, Shyam; Tiwari, Nitesh

2013-06-01

Optimization of power is a very important issue in low-voltage and low-power application. In this paper, we have proposed power gating technique to reduce leakage current and leakage power of one-bit full adder. In this power gating technique, we use two sleep transistors i.e., PMOS and NMOS. PMOS sleep transistor is inserted between power supply and pull up network. And NMOS sleep transistor is inserted between pull down network and ground terminal. These sleep transistors (PMOS and NMOS) are turned on when the circuit is working in active mode. And sleep transistors (PMOS and NMOS) are turned off when circuit is working in standby mode. We have simulated one-bit full adder and compared with the power gating technique using cadence virtuoso tool in 45 nm technology at 0.7 V at 27°C. By applying this technique, we have reduced leakage current from 2.935 pA to 1.905 pA and leakage power from 25.04μw to 9.233μw. By using this technique, we have reduced leakage power up to 63.12%.

Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films

NASA Astrophysics Data System (ADS)

Inatsuka, Takuya; Kumagai, Yuki; Kuroda, Rihito; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro

2012-04-01

Anomalous stress-induced leakage current (SILC), which has a much larger current density than average SILC, causes severe bit error in flash memories. To suppress anomalous SILC, detailed evaluations are strongly required. We evaluate the characteristics of anomalous SILC of 5.6 nm oxide films using a fabricated array test pattern, and recovery characteristics are observed. Some characteristics of typical anomalous cells in the time domain are measured, and the recovery characteristics of average and anomalous SILCs are examined. Some of the anomalous cells have random telegraph signals (RTSs) of gate leakage current, which are characterized as discrete and random switching phenomena. The dependence of RTSs on the applied electric field is investigated, and the recovery tendency of anomalous SILC with and without RTSs are also discussed.

Effect of Mechanical Stresses on Characteristics of Chip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2007-01-01

The effect of compressive mechanical stresses on chip solid tantalum capacitors is investigated by monitoring characteristics of different part types under axial and hydrostatic stresses. Depending on part types, an exponential increase of leakage currents was observed when stresses exceeded 10 MPa to 40 MPa. For the first time, reversible variations of leakage currents (up to two orders of magnitude) with stress have been demonstrated. Mechanical stresses did not cause significant changes of AC characteristics of the capacitors, whereas breakdown voltages measured during the surge current testing decreased substantially indicating an increased probability of failures of stressed capacitors in low impedance applications. Variations of leakage currents are explained by a combination of two mechanisms: stress-induced scintillations and stress-induced generation of electron traps in the tantalum pentoxide dielectric.

Reduction of leakage current at the gate edge of SDB SOI NMOS transistor

NASA Astrophysics Data System (ADS)

Kang, Sung-Weon; Lyu, Jong-Son; Kang, Jin-Young; Kang, Sang-Won; Lee, Jin-Hyo

1995-06-01

Leakage current through the parasitic channel formed at the sidewall of the SOI active region has been investigated by measuring the subthreshold I-V characteristics. Partially depleted (PD, approximately 2500 Angstrom) and fully depleted (FD, approximately 800 Angstrom) SOI NMOS transistors of enhancement mode have been fabricated using the silicon direct bonding (SDB) technology. Isolation processes for the SOI devices were LOCOS, LOCOS with channel stop ion implantation or fully recessed trench (FRT). The electron concentration of the parasitic channel is calculated by the PISCES Ilb simulation. As a result, leakage current of the FD mode SOI device with FRT isolation at the front and back gate biases of 0 V was reduced to approximately pA and no hump was seen on the drain current curve.

Modeling a dielectric elastomer as driven by triboelectric nanogenerator

NASA Astrophysics Data System (ADS)

Chen, Xiangyu; Jiang, Tao; Wang, Zhong Lin

2017-01-01

By integrating a triboelectric nanogenerator (TENG) and a thin film dielectric elastomer actuator (DEA), the DEA can be directly powered and controlled by the output of the TENG, which demonstrates a self-powered actuation system toward various practical applications in the fields of electronic skin and soft robotics. This paper describes a method to construct a physical model for this integrated TENG-DEA system on the basis of nonequilibrium thermodynamics and electrostatics induction theory. The model can precisely simulate the influences from both the viscoelasticity and current leakage to the output performance of the TENG, which can help us to better understand the interaction between TENG and DEA devices. Accordingly, the established electric field, the deformation strain of the DEA, and the output current from the TENG are systemically analyzed by using this model. A comparison between real measurements and simulation results confirms that the proposed model can predict the dynamic response of the DEA driven by contact-electrification and can also quantitatively analyze the relaxation of the tribo-induced strain due to the leakage behavior. Hence, the proposed model in this work could serve as a guidance for optimizing the devices in the future studies.

Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films.

PubMed

Zhao, Ye; Hao, Xihong; Zhang, Qi

2014-07-23

Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.

The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgCdTe infrared focal plane array photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, A. L.; Li, G., E-mail: liguang1971@ahu.edu.cn, E-mail: xschen@mail.sitp.ac.cn; He, G.

2013-11-07

We have performed the study on the dependence of laser beam induced current (LBIC) spectra on the temperature for the vacancy-doped molecular beam epitaxy grown Hg{sub 1−x}Cd{sub x}Te (x = 0.31) photodiodes by both experiment and numerical simulations. It is found that the measured LBIC signal has different distributions for different temperature extents. The LBIC profile tends to be more asymmetric with increasing temperature below 170 K. But the LBIC profile becomes more symmetric with increasing temperature above 170 K. Based on a localized leakage model, it is indicated that the localized junction leakage can lead to asymmetric LBIC signal, in good agreement withmore » the experimental data. The reason is that the trap-assisted tunneling current is the dominant leakage current at the cryogenic temperature below 170 K while the diffusion current component becomes dominant above the temperature of 170 K. The results are helpful for us to better clarify the mechanism of the dependence of LBIC spectra on temperature for the applications of HgCdTe infrared photodiodes.« less

A precision analogue integrator system for heavy current measurement in MFDC resistance spot welding

NASA Astrophysics Data System (ADS)

Xia, Yu-Jun; Zhang, Zhong-Dian; Xia, Zhen-Xin; Zhu, Shi-Liang; Zhang, Rui

2016-02-01

In order to control and monitor the quality of middle frequency direct current (MFDC) resistance spot welding (RSW), precision measurement of the welding current up to 100 kA is required, for which Rogowski coils are the only viable current transducers at present. Thus, a highly accurate analogue integrator is the key to restoring the converted signals collected from the Rogowski coils. Previous studies emphasised that the integration drift is a major factor that influences the performance of analogue integrators, but capacitive leakage error also has a significant impact on the result, especially in long-time pulse integration. In this article, new methods of measuring and compensating capacitive leakage error are proposed to fabricate a precision analogue integrator system for MFDC RSW. A voltage holding test is carried out to measure the integration error caused by capacitive leakage, and an original integrator with a feedback adder is designed to compensate capacitive leakage error in real time. The experimental results and statistical analysis show that the new analogue integrator system could constrain both drift and capacitive leakage error, of which the effect is robust to different voltage levels of output signals. The total integration error is limited within  ±0.09 mV s-1 0.005% s-1 or full scale at a 95% confidence level, which makes it possible to achieve the precision measurement of the welding current of MFDC RSW with Rogowski coils of 0.1% accuracy class.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Yong; Yao, Manwen, E-mail: yaomw@tongji.edu.cn; Chen, Jianwen

The electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO{sub 3} is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films can effectively suppress the demerits of pure SrTiO{sub 3} films under low electric field, but the leakage current value reaches to 0.1 A/cm{sup 2} at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films. Compared tomore » laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10{sup −4} A/cm{sup 2}) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.« less

Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

NASA Astrophysics Data System (ADS)

Seo, Jeongdae; Ahn, Yoonho; Son, Jong Yeog

2016-01-01

Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2. Large leakage current was observed by I- V curve and ferroelectric hysteresis loop. The YCrO3 resistive random access memory (RRAM) capacitor showed unipolar switching behaviors with SET and RESET voltages higher than those of general NiO RRAM capacitors. [Figure not available: see fulltext.

The Value of Changing Position in the Detection of CSF Leakage in Spontaneous Intracranial Hypotension Using Tc-99m DTPA Scintigraphy: Two Case Reports.

PubMed

Lu, Yu Yu; Wang, Hsin Yi; Lin, Ying; Lin, Wan Yu

2012-09-01

Radionuclide Cisternography (RNC) is of potential value in pointing out the sites of cerebrospinal fluid (CSF) leakage in patients with spontaneous intracranial hypotension (SIH). In the current report, we present two patients who underwent RNC for suspected CSF leakage. Both patients underwent magnetic resonance imaging (MRI) and RNC for evaluation. We describe a simple method to increase the detection ability of RNC for CSF leakage in patients with SIH.

Using provenance of terrigenous sediment to reconstruct the Agulhas Leakage during the Early and Late Pleistocene

NASA Astrophysics Data System (ADS)

Pearson, B.; Franzese, A. M.

2017-12-01

The Agulhas Current, the strongest western boundary current in the southern hemisphere, is uniquely characterized by its strong retroflection. The current carries water southward from the Indian Ocean toward the cape of South Africa, before turning back on itself. At this point of retroflection, some of the current's flow escapes into the southern Atlantic Ocean. This transfer of water from the Indian Ocean to Atlantic Ocean makes up the Agulhas Leakage. The Leakage occurs in a series of eddies and rings located in the Cape Basin south of the African continent. Scientific literature demonstrates that relatively buoyant leakage water has been a determining factor varying strength of the Atlantic Meridional Ocean Current (AMOC), during glacial-interglacial cycles. It has been demonstrated that radiogenic isotope, major, and trace element concentrations serve as a proxy for terrigenous sediment provenance in the Agulhas region. Current understanding is that terrigenous sediment provenance is older during warmer periods of deposition. This corresponds to more input from southeastern African end members, and thus a stronger Agulhas Current, during warming periods in the paleoclimate record. Conversely, younger terrigenous sediment deposited during colder periods, such as the Last Glacial Maximum, suggests a weaker Agulhas Current, and less Agulhas Leakage. In 2016, on the International Ocean Discovery Program Expedition 361, sediment cores were drilled at 6 sites in the Greater Agulhas region. A major goal of the expedition was to expand knowledge of the relation between changes in the Agulhas System and changes in paleoclimate, southern African climate, and AMOC. We analyzed sediment from Expedition 361 Site U1479 (35°03.53'S; 17°24.06'E; 2615 mbsl) located where the Agulhas Leakage occurs. We measured Argon, strontium isotope ratios, ɛNd, trace and major element concentrations on the <2 micron clay fraction. Preliminary results foretell promising findings. For instance, for the Early Pleistocene ( 1.3 - 1.5 Ma), K-Ar model ages correlate with shipboard measurements of natural gamma radiation, which show approximate 41 kyr periodicity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohaghegh, Shahab D.

apability of underground carbon dioxide storage to confine and sustain injected CO2 for a very long time is the main concern for geologic CO2 sequestration. If a leakage from a geological CO2 sequestration site occurs, it is crucial to find the approximate amount and the location of the leak in order to implement proper remediation activity. An overwhelming majority of research and development for storage site monitoring has been concentrated on atmospheric, surface or near surface monitoring of the sequestered CO2. This study aims to monitor the integrity of CO2 storage at the reservoir level. This work proposes developing in-situmore » CO2 Monitoring and Verification technology based on the implementation of Permanent Down-hole Gauges (PDG) or “Smart Wells” along with Artificial Intelligence and Data Mining (AI&DM). The technology attempts to identify the characteristics of the CO2 leakage by de-convolving the pressure signals collected from Permanent Down-hole Gauges (PDG). Citronelle field, a saline aquifer reservoir, located in the U.S. was considered for this study. A reservoir simulation model for CO2 sequestration in the Citronelle field was developed and history matched. The presence of the PDGs were considered in the reservoir model at the injection well and an observation well. High frequency pressure data from sensors were collected based on different synthetic CO2 leakage scenarios in the model. Due to complexity of the pressure signal behaviors, a Machine Learning-based technology was introduced to build an Intelligent Leakage Detection System (ILDS). The ILDS was able to detect leakage characteristics in a short period of time (less than a day) demonstrating the capability of the system in quantifying leakage characteristics subject to complex rate behaviors. The performance of ILDS was examined under different conditions such as multiple well leakages, cap rock leakage, availability of an additional monitoring well, presence of pressure drift and noise in the pressure sensor and uncertainty in the reservoir model.« less

Mechanism of a-IGZO TFT device deterioration—illumination light wavelength and substrate temperature effects

NASA Astrophysics Data System (ADS)

Chen, Te-Chih; Kuo, Yue; Chang, Ting-Chang; Chen, Min-Chen; Chen, Hua-Mao

2017-10-01

Device characteristics changes in an a-IGZO thin film transistor under light illumination and at raised temperature have been investigated. Light exposure causes a large leakage current, which is more obvious with an increase in the illumination energy, power and the temperature. The increase in the leakage current is due to the trap assisted photon excitation process that generates electron-hole pairs and the mechanism is enhanced with the additional thermal energy. The leakage current comes from the source side because holes generated in the process drift to the source side and therefore lower the barrier height. The above mechanism has been further verified with experiments of drain bias induced shifts in the threshold voltage and the subthreshold slope.

The effect of guard ring on leakage current and spectroscopic performance of TlBr planar detectors

NASA Astrophysics Data System (ADS)

Kargar, Alireza; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-09-01

Four thallium bromide planar detectors were fabricated from materials grown at RMD Inc. The TlBr samples were prepared to investigate the effect of guard ring on device gamma-ray spectroscopy performance, and to investigate the leakage current through surface and bulk. The devices' active area in planar configuration were 4.4 × 4.4 × 1.0 mm3. In this report, the detector fabrication process is described and the resulting energy spectra are discussed. It is shown that the guard ring improves device spectroscopic performance by shielding the sensing electrode from the surface leakage current, and by making the electric filed more uniform in the active region of the device.

Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

2018-04-01

A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

The behavior of peroxisomes in vitro: mammalian peroxisomes are osmotically sensitive particles.

PubMed

Antonenkov, Vasily D; Sormunen, Raija T; Hiltunen, J Kalervo

2004-12-01

It has been known for a long time that mammalian peroxisomes are extremely fragile in vitro. Changes in the morphological appearance and leakage of proteins from purified particles demonstrate that peroxisomes are damaged during isolation. However, some properties of purified peroxisomes, e.g., the latency of catalase, imply that their membranes are not disrupted. In the current study, we tried to ascertain the mechanism of this unusual behavior of peroxisomes in vitro. Biochemical and morphological examination of isolated peroxisomes subjected to sonication or to freezing and thawing showed that the membrane of the particles seals after disruption, restoring permeability properties. Transient damage of the membrane leads to the formation of peroxisomal "ghosts" containing nucleoid but nearly devoid of matrix proteins. The rate of leakage of matrix proteins from broken particles depended inversely on their molecular size. The effect of polyethylene glycols on peroxisomal integrity indicated that these particles are osmotically sensitive. Peroxisomes suffered an osmotic lysis during isolation that was resistant to commonly used low-molecular-mass osmoprotectors, e.g., sucrose. Damage to peroxisomes was partially prevented by applying more "bulky" osmoprotectors, e.g., polyethylene glycol 1500. A method was developed for the isolation of highly purified and nearly intact peroxisomes from rat liver by using polyethylene glycol 1500 as an osmoprotector.

Systematic review of methods to predict and detect anastomotic leakage in colorectal surgery.

PubMed

Hirst, N A; Tiernan, J P; Millner, P A; Jayne, D G

2014-02-01

Anastomotic leakage is a serious complication of gastrointestinal surgery resulting in increased morbidity and mortality, poor function and predisposing to cancer recurrence. Earlier diagnosis and intervention can minimize systemic complications but is hindered by current diagnostic methods that are non-specific and often uninformative. The purpose of this paper is to review current developments in the field and to identify strategies for early detection and treatment of anastomotic leakage. A systematic literature search was performed using the MEDLINE, Embase, PubMed and Cochrane Library databases. Search terms included 'anastomosis' and 'leak' and 'diagnosis' or 'detection' and 'gastrointestinal' or 'colorectal'. Papers concentrating on the diagnosis of gastrointestinal anastomotic leak were identified and further searches were performed by cross-referencing. Computerized tomography CT scanning and water-soluble contrast studies are the current preferred techniques for diagnosing anastomotic leakage but suffer from variable sensitivity and specificity, have logistical constraints and may delay timely intervention. Intra-operative endoscopy and imaging may offer certain advantages, but the ability to predict anastomotic leakage is unproven. Newer techniques involve measurement of biomarkers for anastomotic leakage and have the potential advantage of providing cheap real-time monitoring for postoperative complications. Current diagnostic tests often fail to diagnose anastomotic leak at an early stage that enables timely intervention and minimizes serious morbidity and mortality. Emerging technologies, based on detection of local biomarkers, have achieved proof of concept status but require further evaluation to determine whether they translate into improved patient outcomes. Further research is needed to address this important, yet relatively unrecognized, area of unmet clinical need. Colorectal Disease © 2013 The Association of Coloproctology of Great Britain and Ireland.

Self-discharge analysis and characterization of supercapacitors for environmentally powered wireless sensor network applications

NASA Astrophysics Data System (ADS)

Yang, Hengzhao; Zhang, Ying

2011-10-01

A new approach is presented to characterize the variable leakage resistance, a parameter in the variable leakage resistance model we developed to model supercapacitors used in environmentally powered wireless sensor network applications. Based on an analysis of the supercapacitor terminal behavior during the self-discharge, the variable leakage resistance is modeled as a function of the supercapacitor terminal voltage instead of the self-discharge time, which is more practical for an environmentally powered wireless sensor node. The new characterization approach is implemented and validated using MATLAB Simulink with a 10 F supercapacitor as an example. In addition, effects of initial voltages and temperatures on the supercapacitor self-discharge rate and the variable leakage resistance value are explored.

Potential for EMU Fabric Damage by Electron Beam and Molten Metal During Space Welding for the International Space Welding Experiment

NASA Technical Reports Server (NTRS)

Fragomeni, James M.

1998-01-01

As a consequence of preparations concerning the International Space Welding Experiment (ISWE), studies were performed to better understand the effect of molten metal contact and electron beam impingement with various fabrics for space suit applications. The question arose as to what would occur if the electron beam from the Ukrainian Universal Hand Tool (UHT) designed for welding in space were to impinge upon a piece of Nextel AF-62 ceramic cloth designed to withstand temperatures up to 1427 C. The expectation was that the electron beam would lay down a static charge pattern with no damage to the ceramic fabric. The electron beam is capable of spraying the fabric with enough negative charge to repel further electrons from the fabric before significant heating occurs. The static charge pattern would deflect any further charge accumulation except for a small initial amount of leakage to the grounded surface of the welder. However, when studies were made of the effect of the electron beam on the insulating ceramic fabric it was surprisingly found that the electron beam did indeed burn through the ceramic fabric. It was also found that the shorter electron beam standoff distances had longer burnthrough times than did some greater electron beam standoff distances. A possible explanation for the longer burnthrough times for the small electron beam standoff distance would be outgassing of the fabric which caused the electron beam hand-tool to cycle on and off to provide some protection for the cathodes. The electron beam hand tool was observed to cycle off at the short standoff distance of two inches likely due to vapors being outgassed. During the electron beam welding process there is an electron leakage, or current leakage, flow from the fabric. A static charge pattern is initially laid down by the electron beam current flow. The static charge makes up the current leakage flow which initially slightly heats up the fabric. The initially laid down surface charge leaks a small amount of current. The rate at which the current charge leaks from the fabric controls how fast the fabric heats up. As the ceramic fabric is heated it begins to outgass primarily from contamination/impurities atoms or molecules on and below the fabric surface. The contaminant gases ionize to create extra charge carriers and multiply a current of electrons. The emitted gas which ionized in the electron leakage flow promotes further leakage. Thus, the small leakage of charge from the fabric surface is enhanced by outgassing. When the electron beam current makes up the lost current, the incoming electrons heat the fabric and further enhance the outgassing. The additional leakage promotes additional heating up of the ceramic fabric. The electrons bound to the ceramic fabric surface leak off more and more as the surface gets hotter promoting even greater leakage. The additional electrons that result also gain energy in the field and produce further electrons. Eventually the process becomes unstable and accelerates to the point where a hole is burned through the fabric.

Multichannel detection of ionic currents through two nanopores fabricated on integrated Si3N4 membranes.

PubMed

Yanagi, Itaru; Akahori, Rena; Aoki, Mayu; Harada, Kunio; Takeda, Ken-Ichi

2016-08-16

Integration of solid-state nanopores and multichannel detection of signals from each nanopore are effective measures for realizing high-throughput nanopore sensors. In the present study, we demonstrated fabrication of Si3N4 membrane arrays and the simultaneous measurement of ionic currents through two nanopores formed in two adjacent membranes. Membranes with thicknesses as low as 6.4 nm and small nanopores with diameters of less than 2 nm could be fabricated using the poly-Si sacrificial-layer process and multilevel pulse-voltage injection. Using the fabricated nanopore membranes, we successfully achieved simultaneous detection of clear ionic-current blockades when single-stranded short homopolymers (poly(dA)60) passed through two nanopores. In addition, we investigated the signal crosstalk and leakage current among separated chambers. When two nanopores were isolated on the front surface of the membrane, there was no signal crosstalk or leakage current between the chambers. However, when two nanopores were isolated on the backside of the Si substrate, signal crosstalk and leakage current were observed owing to high-capacitance coupling between the chambers and electrolysis of water on the surface of the Si substrate. The signal crosstalk and leakage current could be suppressed by oxidizing the exposed Si surface in the membrane chip. Finally, the observed ionic-current blockade when poly(dA)60 passed through the nanopore in the oxidized chip was approximately half of that observed in the non-oxidized chip.

Evaluation of Case Size 0603 BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2015-01-01

High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

Investigation of the Leak Response of a Carbon-Fiber Laminate Loaded in Biaxial Tension

NASA Technical Reports Server (NTRS)

Jackson, Wade C.; Ratcliffe, James G.

2013-01-01

Designers of pressurized structures have been reluctant to use composite materials because of concerns over leakage. Biaxial stress states are expected to be the worst-case loading condition for allowing leakage to occur through microcracks. To investigate the leakage behavior under in-plane biaxial loading, a cruciform composite specimen was designed that would have a relatively large test section with a uniform 1:1 biaxial loading ratio. A 7.6-cm-square test section was desired for future investigations of the leakage response as a result of impact damage. Many iterations of the cruciform specimen were evaluated using finite element analysis to reduce stress concentrations and maximize the size of the uniform biaxial strain field. The final design allowed the specimen to go to relatively high biaxial strain levels without incurring damage away from the test section. The specimen was designed and manufactured using carbon/epoxy fabric with a four-ply-thick, quasi-isotropic, central test section. Initial validation and testing were performed on a specimen without impact damage. The specimen was tested to maximum biaxial strains of approximately 4500micro epsilon without apparent damage. A leak measurement system containing a pressurized cavity was clamped to the test section and used to measure the flow rate through the specimen. The leakage behavior of the specimen was investigated for pressure differences up to 172 kPa

On Leakage Current Measured at High Cell Voltages in Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vadivel, Nicole R.; Ha, Seungbum; He, Meinan

2017-01-01

In this study, parasitic side reactions in lithium-ion batteries were examined experimentally using a potentiostatic hold at high cell voltage. The experimental leakage current measured during the potentiostatic hold was compared to the Tafel expression and showed poor agreement with the expected transfer coefficient values, indicating that a more complicated expression could be needed to accurately capture the physics of this side reaction. Here we show that cross-talk between the electrodes is the primary contribution to the observed leakage current after the relaxation of concentration gradients has ceased. This cross-talk was confirmed with experiments using a lithium-ion conducting glass ceramicmore » (LICGC) separator, which has high conductance only for lithium cations. The cells with LICGC separators showed significantly less leakage current during the potentiostatic hold test compared to cells with standard microporous separators where cross-talk is present. In addition, direct-current pulse power tests show an impedance rise for cells held at high potentials and for cells held at high temperatures, which could be attributed to film formation from the parasitic side reaction. Based on the experimental findings, a phenomenological mechanism is proposed for the parasitic side reaction which accounts for cross-talk and mass transport of the decomposition products across the separator.« less

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aslam, N.; Rodenbücher, C.; Szot, K.

2014-08-14

The resistive switching (RS) properties of strontium titanate (Sr{sub 1+x}Ti{sub 1+y}O{sub 3+(x+2y)}, STO) based metal-oxide-metal structures prepared from industrial compatible processes have been investigated focusing on the effects of composition, microstructure, and device size. Metastable perovskite STO films were prepared on Pt-coated Si substrates utilizing plasma-assisted atomic layer deposition (ALD) from cyclopentadienyl-based metal precursors and oxygen plasma at 350 °C, and a subsequent annealing at 600 °C in nitrogen. Films of 15 nm and 12 nm thickness with three different compositions [Sr]/([Sr] + [Ti]) of 0.57 (Sr-rich STO), 0.50 (stoichiometric STO), and 0.46 (Ti-rich STO) were integrated into Pt/STO/TiN crossbar structures with sizes ranging from 100 μm{supmore » 2} to 0.01 μm{sup 2}. Nano-structural characterizations revealed a clear effect of the composition of the as-deposited STO films on their crystallization behavior and thus on the final microstructures. Local current maps obtained by local-conductivity atomic force microscopy were in good agreement with local changes of the films' microstructures. Correspondingly, also the initial leakage currents of the Pt/STO/TiN devices were affected by the STO compositions and by the films' microstructures. An electroforming process set the Pt/STO/TiN devices into the ON-state, while the forming voltage decreased with increasing initial leakage current. After a RESET process under opposite voltage has been performed, the Pt/STO/TiN devices showed a stable bipolar RS behavior with non-linear current-voltage characteristics for the high (HRS) and the low (LRS) resistance states. The obtained switching polarity and nearly area independent LRS values agree with a filamentary character of the RS behavior according to the valence change mechanism. The devices of 0.01 μm{sup 2} size with a 12 nm polycrystalline stoichiometric STO film were switched at a current compliance of 50 μA with voltages of about ±1.0 V between resistance states of about 40 kΩ (LRS) and 1 MΩ (HRS). After identification of the influences of the films' microstructures, i.e., grain boundaries and small cracks, the remaining RS properties could be ascribed to the effect of the [Sr]/([Sr] + [Ti]) composition of the ALD STO thin films.« less

Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-04-13

The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

Application of poly (p-phenylene oxide) as blocking layer to reduce self-discharge in supercapacitors

NASA Astrophysics Data System (ADS)

Tevi, Tete; Yaghoubi, Houman; Wang, Jing; Takshi, Arash

2013-11-01

Supercapacitors are electrochemical energy storage devices with high power density. However, application of supercapacitors is limited mainly due to their high leakage current. In this work, application of an ultra-thin layer of electrodeposited poly (p-phenylene oxide) (PPO) has been investigated as a blocking layer to reduce the leakage current. The polymer was first deposited on a glassy carbon electrode. The morphology of the film was studied by atomic force microscopy (AFM), and the film thickness was estimated to be ˜1.5 nm by using the electrochemical impedance spectroscopy (EIS) technique. The same deposition method was applied to coat the surface of the activated carbon electrodes of a supercapacitor with PPO. The specific capacitance, the leakage current, and the series resistance were measured in two devices with and without the blocking layer. The results demonstrate that the application of the PPO layer reduced the leakage current by ˜78%. However, the specific capacitance was decreased by ˜56%, when the blocking layer was applied. Due to the lower rate of self-discharge, the suggested approach can be applied to fabricate devices with longer charge storage time.

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2016-01-01

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2017-01-01

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-03-01

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

2017 NEPP Tasks Update for Ceramic and Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2017-01-01

This presentation gives an overview of current NEPP tasks on ceramic and tantalum capacitors and plans for the future. It includes tasks on leakage currents, gas generation and case deformation in wet tantalum capacitors; ESR degradation and acceleration factors in MnO2 and polymer cathode capacitors. Preliminary results on the effect of moisture on degradation of reverse currents in MnO2 tantalum capacitors are discussed. Latest results on mechanical characteristics of MLCCs and modeling of degradation of leakage currents in BME capacitors with defects are also presented.

Influence of social factors on the relation between lie-telling and children's cognitive abilities.

PubMed

Talwar, Victoria; Lavoie, Jennifer; Gomez-Garibello, Carlos; Crossman, Angela M

2017-07-01

Lie-telling may be part of a normative developmental process for children. However, little is known about the complex interaction of social and cognitive factors related to this developmental behavior. The current study examined parenting style, maternal exposure to stressors, and children's cognitive abilities in relation to children's antisocial lie-telling behavior in an experimental setting. Children (3-6years, N=157) participated in a modified temptation resistance paradigm to elicit spontaneous lies. Results indicate that high authoritative parenting and high inhibitory control interact to predict a lower propensity to lie, but those who did lie had better semantic leakage control. This suggests that although children's lie-telling may be normative during early development, the relation to children's cognitive abilities can be moderated by responsive parenting behaviors that discourage lying. Copyright © 2017 Elsevier Inc. All rights reserved.

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

NASA Astrophysics Data System (ADS)

Alvarez, J.; Boutchich, M.; Kleider, J. P.; Teraji, T.; Koide, Y.

2014-09-01

The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy and confocal micro-Raman/photoluminescence imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040 cm-1). These latter bands are usually assigned to the vibrational modes involving boron impurities and its possible complexes that can electrically act as traps for charge carriers. Local current-voltage measurements performed at the hot-spots point out a trap-filled-limited current as the main conduction mechanism favouring the leakage current in the Schottky devices.

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

An assessment of the Space Station Freedom program's leakage current requirement

NASA Technical Reports Server (NTRS)

Nagy, Michael

1991-01-01

The Space Station Freedom Program requires leakage currents to be limited to less than human perception level, which NASA presently defines as 5 mA for dc. The origin of this value is traced, and the literature for other dc perception threshold standards is surveyed. It is shown that while many varying standards exist, very little experimental data is available to support them.

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Evaluation of 10V Chip Polymer Tantalum Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Due to low ESR and safe failure mode, new technology chip polymer tantalum capacitors (CPTC) have gained popularity in the electronics design community, first in commercial applications, and now in hi-rel and space systems. The major drawbacks of these parts are high leakage currents, degradation under environmental stresses, and a relatively narrow temperature range of operating and storage conditions. Several studies have shown that a certain amount of moisture in polymer cathodes is necessary for a normal operation of the parts. This might limit applications of CPTCs in space systems and requires analysis of long-term exposure to deep vacuum conditions on their performance and reliability. High leakage currents and limited maximum operational temperature complicate accelerated testing that is necessary to assess long-term reliability and require new screening and qualification procedures for quality assurance. A better understanding of behavior of CPTCs as compared to traditional, MnO2, capacitors is necessary to develop adequate approaches for QA system for space applications. A specific of CPTCs is that different materials and processes might be used for low-voltage (10 V and less) and high-voltage (above 10 V) capacitors, so performance and degradation processes in these groups require separate analysis. In this work, that is a part of the NASA Electronic Parts and Packaging (NEPP) program, degradation of AC and DC characteristics under environmental stresses at different temperatures and voltages have been studied in nine lots of commercial and automotive grade capacitors rated to 10 V. Results of analysis of leakage currents, high temperature storage (HTS) up to 5000 hrs in vacuum and air at different temperatures, and Highly Accelerated Life Testing (HALT) in the range from 85 C to 145 C are presented. Temperature and voltage acceleration factors were calculated based on approximation of distributions of degradation rates with a general log-linear Weibull model. Mechanisms of degradation and failures, and requirements for screening and qualification testing are discussed.

Nonstoichiometric Solution-Processed BaTiO₃ Film for Gate Insulator Applications.

PubMed

Lau, Joyce; Kim, Sangsub; Kim, Hyunki; Koo, Kwangjun; Lee, Jaeseob; Kim, Sangsoo; Choi, Byoungdeog

2018-09-01

Solution processed barium titanate (BTO) was used to fabricate an Al/BaTiO3/p-Si metal-insulator-semiconductor (MIS) structure, which was used as a gate insulator. Changes in the electrical characteristics of the film were investigated as a function of the film thickness and post deposition annealing conditions. Our results showed that a thickness of 5 layers and an annealing temperature of 650 °C produced the highest electrical performance. BaxTi1-xO3 was altered at x = 0.10, 0.30, 0.50, 0.70, 0.90, and 1.0 to investigate changes in the electrical properties as a function of composition. The highest dielectric constant of 87 was obtained for x = 0.10, while the leakage current density was suppressed as Ba content increased. The lowest leakage current density was 1.34×10-10 A/cm2, which was observed at x = 0.90. The leakage current was related to the resistivity of the film, the interface states, and grain densification. Space charge limited current (SCLC) was the dominant leakage mechanism in BTO films based on leakage current analysis. Although a Ba content of x = 0.90 had the highest trap density, the traps were mainly composed of Ti-vacancies, which acted as strong electron traps and affected the film resistivity. A secondary phase, Ba2TiO4, which was observed in cases of excess Ba, acted as a grain refiner and provided faster densification of the film during the thermal process. The absence of a secondary phase in BaO (x = 1.0) led to the formation of many interface states and degradation in the electrical properties. Overall, the insulator properties of BTO were improved when the composition ratio was x = 0.90.

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-05-01

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopymore » with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-01-01

Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopymore » mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

PubMed

Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

2017-12-01

The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

Electrical and dielectric properties of (barium, strontium) titanium trioxide thin film capacitors for ultra-high density dynamic random access memories

NASA Astrophysics Data System (ADS)

Basceri, Cem

The electrical and dielectric properties of fiber-textured, MOCVD (Basb{0.7}Srsb{0.3})TiOsb3 (BST) thin film capacitors appropriate for ultra-large scale integration (ULSI) dynamic random access memory (DRAM) applications have been analyzed. Dielectric relaxation, leakage, resistance degradation, and dielectric response phenomena, within a comprehensive matrix of external and material parameters, have been investigated. The phenomenology of the dielectric response of our BST films has been shown to be well-described by Curie-von Schweidler behavior, although the microscopic origin of this behavior has not been presently agreed upon. The time-dependent polarization behavior has been linked to the dispersion in permittivity with respect to frequency. The leakage current through our BST films has been found to be primarily limited by interfacial Schottky barriers whose properties depend on the electrode material, interface microstructure, and deposition conditions. Its temperature and voltage dependence have been interpreted via a thermionic emission model. Analysis in terms of Schottky-barrier limited current flow gave acceptable values for the cathode barrier height. The results have indicated that our BST films, appropriate for DRAM applications, do not possess depletion layers at the film-electrode interfaces. Instead, they must be considered as depleted of charge carriers across their entire thickness. Resistance degradation has been found to be thermally activated and voltage/field dependent. The results have indicated that there is a film thickness effect, which manifests itself as a decrease in the activation energy with respect to temperature for thicker films. A significant stoichiometry effect on the measured resistance degradation lifetimes has been observed. The analyses of the leakage and capacitance-voltage behaviors for the degraded samples have indicated that a demixing of oxygen vacancies occurs during resistance degradation, which causes the Schottky barrier height to decrease, in agreement with the observed relative shift of the peak capacitance as a function of voltage. For all the film thicknesses and compositions studied, extrapolated resistance degradation lifetimes of our BST films, which were obtained by using an appropriate form, are well above the current benchmark of 10 years at the DRAM operating conditions of 1.6 V and 85sp°C. Above the bulk Curie point (˜300 K), the phenomenological approach, i.e., Landau-Ginzburg-Devonshire (LGD) theory, has been demonstrated to account very well for the observed C-V behavior in our BST films. Furthermore, temperature dependent measurements gave evidence that, as expected, the form of the dielectric behavior changes near the bulk Curie point, but that the phase transition appears for some reason to be frustrated. Film thickness has been established to impact primarily the zero-bias permittivity through a thickness dependence of the first order coefficient of the LGD power series. Our analysis does indicate that if it results from a series-connected interfacial layer, that layer must be a nonlinear dielectric, as must the bulk of the film. The dielectric constant has been found to be composition dependent, reaching its highest values for compositions near the stoichiometric values. Furthermore, film stoichiometry has been established to strongly effect both the first order and third order coefficients of the LGD power series.

A Game-Theoretic Approach to Information-Flow Control via Protocol Composition

NASA Astrophysics Data System (ADS)

Alvim, Mário; Chatzikokolakis, Konstantinos; Kawamoto, Yusuke; Palamidessi, Catuscia

2018-05-01

In the inference attacks studied in Quantitative Information Flow (QIF), the attacker typically tries to interfere with the system in the attempt to increase its leakage of secret information. The defender, on the other hand, typically tries to decrease leakage by introducing some controlled noise. This noise introduction can be modeled as a type of protocol composition, i.e., a probabilistic choice among different protocols, and its effect on the amount of leakage depends heavily on whether or not this choice is visible to the attacker. In this work, we consider operators for modeling visible and hidden choice in protocol composition, and we study their algebraic properties. We then formalize the interplay between defender and attacker in a game-theoretic framework adapted to the specific issues of QIF, where the payoff is information leakage. We consider various kinds of leakage games, depending on whether players act simultaneously or sequentially, and on whether or not the choices of the defender are visible to the attacker. In the case of sequential games, the choice of the second player is generally a function of the choice of the first player, and his/her probabilistic choice can be either over the possible functions (mixed strategy) or it can be on the result of the function (behavioral strategy). We show that when the attacker moves first in a sequential game with a hidden choice, then behavioral strategies are more advantageous for the defender than mixed strategies. This contrasts with the standard game theory, where the two types of strategies are equivalent. Finally, we establish a hierarchy of these games in terms of their information leakage and provide methods for finding optimal strategies (at the points of equilibrium) for both attacker and defender in the various cases.

Noise in CdZnTe detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luke, P. N.; Amman, M.; Lee J. S.

2000-10-10

Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may bemore » the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments.« less

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

NASA Astrophysics Data System (ADS)

Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

2009-11-01

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

Simulation of bipolar charge transport in nanocomposite polymer films

NASA Astrophysics Data System (ADS)

Lean, Meng H.; Chu, Wei-Ping L.

2015-03-01

This paper describes 3D particle-in-cell simulation of bipolar charge injection and transport through nanocomposite film comprised of ferroelectric ceramic nanofillers in an amorphous polymer matrix. The classical electrical double layer (EDL) model for a monopolar core is extended (eEDL) to represent the nanofiller by replacing it with a dipolar core. Charge injection at the electrodes assumes metal-polymer Schottky emission at low to moderate fields and Fowler-Nordheim tunneling at high fields. Injected particles migrate via field-dependent Poole-Frenkel mobility and recombine with Monte Carlo selection. The simulation algorithm uses a boundary integral equation method for solution of the Poisson equation coupled with a second-order predictor-corrector scheme for robust time integration of the equations of motion. The stability criterion of the explicit algorithm conforms to the Courant-Friedrichs-Levy limit assuring robust and rapid convergence. The model is capable of simulating a wide dynamic range spanning leakage current to pre-breakdown. Simulation results for BaTiO3 nanofiller in amorphous polymer matrix indicate that charge transport behavior depend on nanoparticle polarization with anti-parallel orientation showing the highest leakage conduction and therefore lowest level of charge trapping in the interaction zone. Charge recombination is also highest, at the cost of reduced leakage conduction charge. The eEDL model predicts the meandering pathways of charge particle trajectories.

Surface leakage current in 12.5  μm long-wavelength HgCdTe infrared photodiode arrays.

PubMed

Qiu, Weicheng; Hu, Weida; Lin, Chun; Chen, Xiaoshuang; Lu, Wei

2016-02-15

Long-wavelength (especially >12  μm) focal plane array (FPA) infrared detection is the cutting edge technique for third-generation infrared remote sensing. However, dark currents, which are very sensitive to the growth of small Cd composition HgCdTe, strongly limits the performance of long wavelength HgCdTe photodiode arrays in FPAs. In this Letter, 12.5 μm long-wavelength Hg_1-xCd_xTe (x≈0.219) infrared photodiode arrays are reported. The variable-area and variable-temperature electrical characteristics of the long-wavelength infrared photodiodes are measured. The characteristics of the extracted zero-bias resistance-area product (l/R₀A) varying with the perimeter-to-area (P/A) ratio clearly show that surface leakage current mechanisms severely limit the overall device performance. A sophisticated model has been developed for investigating the leakage current mechanism in the photodiodes. Modeling of temperature-dependent I-V characteristic indicates that the trap-assisted tunneling effect dominates the dark current at 50 K resulting in nonuniformities in the arrays. The extracted trap density, approximately 10¹³-10¹⁴  cm^-3, with an ionized energy of 30 meV is determined by simulation. The work described in this Letter provides the basic mechanisms for a better understanding of the leakage current mechanism for long-wavelength (>12  μm) HgCdTe infrared photodiode arrays.

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

NASA Astrophysics Data System (ADS)

Jegert, Gunther; Kersch, Alfred; Weinreich, Wenke; Lugli, Paolo

2011-01-01

In this paper, we investigate the influence of electrode roughness on the leakage current in TiN/high-κ ZrO2/TiN (TZT) thin-film capacitors which are used in dynamic random access memory cells. Based on a microscopic transport model, which is expanded to incorporate electrode roughness, we assess the ultimate scaling potential of TZT capacitors in terms of equivalent oxide thickness, film smoothness, thickness fluctuations, defect density and distribution, and conduction band offset (CBO). The model is based on three-dimensional, fully self-consistent, kinetic Monte Carlo transport simulations. Tunneling transport in the bandgap of the dielectric is treated, which includes defect-assisted transport mechanisms. Electrode roughness is described in the framework of fractal geometry. While the short-range roughness of the electrodes is found not to influence significantly the leakage current, thickness fluctuations of the dielectric have a major impact. For thinner dielectric films they cause a transformation of the dominant transport mechanism from Poole-Frenkel conduction to trap-assisted tunneling. Consequently, the sensitivity of the leakage current on electrode roughness drastically increases on downscaling. Based on the simulations, optimization of the CBO is suggested as the most viable strategy to extend the scalability of TZT capacitors over the next chip generations.

Remediation of chromium-slag leakage with electricity cogeneration via a urea-Cr(VI) cell

PubMed Central

Yu, Binbin; Zhang, Huimin; Xu, Wei; Li, Gang; Wu, Zucheng

2014-01-01

Chromium pollution has been historically widespread throughout the world. Most available remediation technologies often require energy consumption. This study is aimed to develop electrochemical remediation for Cr(VI) in chromium-slag leakage with self-generated electricity. Dynamic leaching experiments of chromium-slag samples were conducted to survey the release and leaching behavior of Cr(VI). Based on previous work, a unique urea-Cr(VI) was designed, in which urea was employed as the fuel and Cr(VI) from the leakage of the dichromate slag served as the oxidant. Furthermore, the electrochemical results showed that the removal percent of Cr(VI) was more than 96% after 18 h with the leakage Cr(VI) concentration of 2.69 mM. The open circuit potential (OCP) varied in the range of 1.56 ~ 1.59 V under different initial Cr(VI) leakage concentrations. The approach explores the feasibility of the promising technique without the need of energy input for simultaneous chromium-slag remediation and generation of electricity. PMID:25168513

Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

NASA Astrophysics Data System (ADS)

Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Yamaguchi, Hideshi; Nakamura, Norikazu

2017-03-01

This paper investigates the gate leakage characteristics of in-situ AlN capped InAlN/AlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. It was revealed that the leakage characteristics of AlN capped InAlN/AlN/GaN heterostructures are strongly dependent on the growth temperature of the AlN cap. For an AlN capped structure with an AlN growth temperature of 740 °C, the leakage current even increased although there exists a large bandgap material on InAlN/AlN/GaN heterostructures. On the other hand, a large reduction of the gate leakage current by 4-5 orders of magnitudes was achieved with a very low AlN growth temperature of 430 °C. X-ray diffraction analysis of the AlN cap grown at 740 °C indicated that the AlN layer is tensile-strained. In contrast to this result, the amorphous structure was confirmed for the AlN cap grown at 430 °C by transmission electron microscopy. Furthermore, theoretical analysis based on one-dimensional band simulation was carried out, and the large increase in two-dimensional electron gas (2DEG) observed in Hall measurements was well reproduced by taking into account the spontaneous and piezo-electric polarization in the AlN layer grown at 740 °C. For the AlN capped structure grown at 430 °C, it is believed that the reduced polarization field in the AlN cap suppressed the penetration of 2DEG into the InAlN barrier layer, resulting in a small impact on 2DEG mobility and density. We believe that an in-situ grown AlN cap with a very low growth temperature of 430 °C is a promising candidate for high-frequency/high-power GaN-based devices with low gate leakage current.

Optimal Dynamic Sub-Threshold Technique for Extreme Low Power Consumption for VLSI

NASA Technical Reports Server (NTRS)

Duong, Tuan A.

2012-01-01

For miniaturization of electronics systems, power consumption plays a key role in the realm of constraints. Considering the very large scale integration (VLSI) design aspect, as transistor feature size is decreased to 50 nm and below, there is sizable increase in the number of transistors as more functional building blocks are embedded in the same chip. However, the consequent increase in power consumption (dynamic and leakage) will serve as a key constraint to inhibit the advantages of transistor feature size reduction. Power consumption can be reduced by minimizing the voltage supply (for dynamic power consumption) and/or increasing threshold voltage (V(sub th), for reducing leakage power). When the feature size of the transistor is reduced, supply voltage (V(sub dd)) and threshold voltage (V(sub th)) are also reduced accordingly; then, the leakage current becomes a bigger factor of the total power consumption. To maintain low power consumption, operation of electronics at sub-threshold levels can be a potentially strong contender; however, there are two obstacles to be faced: more leakage current per transistor will cause more leakage power consumption, and slow response time when the transistor is operated in weak inversion region. To enable low power consumption and yet obtain high performance, the CMOS (complementary metal oxide semiconductor) transistor as a basic element is viewed and controlled as a four-terminal device: source, drain, gate, and body, as differentiated from the traditional approach with three terminals: i.e., source and body, drain, and gate. This technique features multiple voltage sources to supply the dynamic control, and uses dynamic control to enable low-threshold voltage when the channel (N or P) is active, for speed response enhancement and high threshold voltage, and when the transistor channel (N or P) is inactive, to reduce the leakage current for low-leakage power consumption.

Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2018-02-01

Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

2D Quantum Transport Modeling in Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Peta, Koteswara Rao; Kim, Moon Deock

2018-01-01

The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is studied using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) characteristics. I-V measurement in this study is in the range of 140 K-420 K in steps of 10 K. A reduction in voltage dependent barrier height and a strong internal electric field in depletion region under reverse bias suggested electric field enhanced thermionic emission in carrier transport via defect states in Au/Ni/GaN SBD. A detailed analysis of reverse leakage current revealed two different predominant transport mechanisms namely variable-range hopping (VRH) and Poole-Frenkel (PF) emission conduction at low (<260 K) and high (>260 K) temperatures respectively. The estimated thermal activation energies (0.20-0.39 eV) from Arrhenius plot indicates a trap assisted tunneling of thermally activated electrons from a deep trap state into a continuum of states associated with each conductive threading dislocation.

Fabrication and high temperature characteristics of ion-implanted GaAs bipolar transistors and ring-oscillators

NASA Technical Reports Server (NTRS)

Doerbeck, F. H.; Yuan, H. T.; Mclevige, W. V.

1981-01-01

Ion implantation techniques that permit the reproducible fabrication of bipolar GaAs integrated circuits are studied. A 15 stage ring oscillator and discrete transistor were characterized between 25 and 400 C. The current gain of the transistor was found to increase slightly with temperature. The diode leakage currents increase with an activation energy of approximately 1 eV and dominate the transistor leakage current 1 sub CEO above 200 C. Present devices fail catastrophically at about 400 C because of Au-metallization.

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

NASA Astrophysics Data System (ADS)

Pontes, F. M.; Pontes, D. S. L.; Leite, E. R.; Longo, E.; Chiquito, A. J.; Pizani, P. S.; Varela, J. A.

2003-12-01

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV.

Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

NASA Astrophysics Data System (ADS)

Racko, Juraj; Benko, Peter; Mikolášek, Miroslav; Granzner, Ralf; Kittler, Mario; Schwierz, Frank; Harmatha, Ladislav; Breza, Juraj

2017-02-01

The contribution employs electrical simulation to assess the effect of the distribution of aluminium in the metal/GaN/AlGaN heterostructure on the leakage current. The heterostructure is characterized by a high density of traps causing an increase of the leakage current consisting of the thermionic emission component and of a non-negligible contribution of trap-assisted tunnelling. The leakage current is highly sensitive to the bending of the potential barrier Ec in the subsurface region of the GaN/AlGaN structure. The band bending is strongly affected by the sheet bound charge at the first GaN/AlGaN/GaN interface due to spontaneous and piezoelectric polarization. The overall charge depends on the concentration of Al, the distribution of Al at the first heterointerface having a strong effect on the formation of the potential barrier.

TID Simulation of Advanced CMOS Devices for Space Applications

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

2016-07-01

This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

Leakage Current Induced by Energetic Disorder in Organic Bulk Heterojunction Solar Cells: Comprehending the Ultrahigh Loss of Open-Circuit Voltage at Low Temperatures

NASA Astrophysics Data System (ADS)

Yang, Wenchao; Luo, Yongsong; Guo, Pengfei; Sun, Haibin; Yao, Yao

2017-04-01

The open-circuit voltage (Voc ) of organic solar cells generally approaches its maximum obtainable values as the temperature decreases. However, recent experiments have revealed that the Voc may suffer from an ultrahigh loss at low temperatures. In order to verify this explanation and investigate the impacts of energetic disorder on the temperature-dependent behaviors of the Voc in general, we calculate the Voc-T plots with the drift-diffusion method under various device working parameters. With the disorder being incorporated into the device model by considering the disorder-suppressed (temperature-dependent) charge-carrier mobilities, it is found that the ultrahigh Voc losses cannot be reproduced under the Onsager-Braun-type charge generation rate. With the charge generation rate being constant or weakly dependent on temperature, for nonselective contacts, the Voc reduces drastically at low temperatures, while for selective contacts, the Voc increases monotonically with decreasing temperature. With higher carrier mobilities or smaller device thicknesses, the ultrahigh loss occurs at lower temperatures. The mechanism is that, since the disorder-suppressed charge mobilities give rise to both low charge-extraction efficiency and small bimolecular recombination rate, plenty of charge carriers can be extracted from the wrong electrode and can form a large leakage current, which counteracts the majority-carrier current and reduces the Voc at low temperatures. Our results thus highlight the essential role of charge-carrier kinetics, except for the charge-filling effect, on dominating the disorder-induced Voc losses.

Experimental grid connected PV system power analysis

NASA Astrophysics Data System (ADS)

Semaoui, Smail; Abdeladim, Kamel; Arab, Amar Hadj; Boulahchich, Saliha; Amrouche, Said Ould; Yassaa, Noureddine

2018-05-01

Almost 80 % of Algerian territory is appropriate for the exploitation of solar energy. The Algerian energetic strategy provides a substantial injection of PV electricity to the national grid. Currently, about 344 MWp of PV arrays which corresponds approximately to 2,34 km2 of module surfaces, are connected on electricity grid over the national territory. The Algerian Northern regions are characterized by strong pollution and high humidity. These phenomena affect the energetic productivity of PV generator. The objective of our study is to analyze experimental grid connected PV system power in coastal locations. Hence, experiments have been conducted on three identical PV systems to determine the electrical performances. Transformer-less inverters are the most attractive for the ground-based photovoltaic (PV) system due to their efficiencies, reduced cost and weight. Besides, the absence of the galvanic isolation generates problems of capacitive leakage current on the AC side and the degradation of the insulation resistance on the DC side of the inverter. In this work, experimental study of the behavior of single-phase inverters without transformers is presented. The main objective of this work is to study the degradation of the insulation resistance at the input of the inverter, and the capacitive leakage current at the output of the inverter. This study was achieved at the CDER on a rainy day of 15/03/2017, on the first PV plant connected to the low voltage network in Algeria. This investigation can help forecasting the PV array energetic production by taking into account natural conditions.

Integrated circuit electrometer and sweep circuitry for an atmospheric probe

NASA Technical Reports Server (NTRS)

Zimmerman, L. E.

1971-01-01

The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

Study of the dose rate effect of 180 nm nMOSFETs

NASA Astrophysics Data System (ADS)

He, Bao-Ping; Yao, Zhi-Bin; Sheng, Jiang-Kun; Wang, Zu-Jun; Huang, Shao-Yan; Liu, Min-Bo; Xiao, Zhi-Gang

2015-01-01

Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A “true” dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

[Reflection on the present study of anastomotic leakage after colorectal surgery].

PubMed

Wu, Zhouqiao; Shi, Jinyao; Li, Ziyu; Ji, Jiafu

Anastomotic leakage is one of the most serious complications of colorectal surgery. Despite progress in available surgical techniques, the morbidity associated with anastomotic leakage remains high. In this review, we summarize the current clinical status of this complication, the problems it causes, and relevant research achievements. To date, a lack of consensus regarding the diagnosis of anastomotic leakage has resulted in varying rates of diagnosis across countries and regions worldwide. Accurately predicting the occurrence of anastomotic leakage using the established risk factors and preoperative scoring systems remains difficult. Many of the described preventive measures, including defunctioning stoma creation, positive air leak testing, and use of effective tissue adhesives, remain controversial; more evidence-based medical information is urgently needed. Delayed diagnoses of anastomotic leakage also remain common in clinical practice. To prevent catastrophic outcomes, such as reoperations or deaths, early diagnosis is critically important. Parameters local to the area of the anastomosis may facilitate early detection of leakage, but their effectiveness is subject to clinical validation. Lastly, the pathological etiology of anastomotic leakage remains to be determined, and its elucidation may inspire innovative interventions that solve this critical surgical complication.

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Hu, J.; Stoffels, S.; Lenci, S.; Bakeroot, B.; Venegas, R.; Groeseneken, G.; Decoutere, S.

2015-02-01

This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5 V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ϕB increase) together with RON degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

Electric double-layer capacitor based on zinc metaphosphate glass-derived hydrogel

NASA Astrophysics Data System (ADS)

Akamatsu, Takafumi; Kasuga, Toshihiro; Nogami, Masayuki

2006-04-01

The present work reports the electrochemical characteristics of an electric double-layer capacitor (EDC) cell with an electrolyte consisting of a glass-derived zinc metaphosphate hydrogel (ZP gel) or H3PO4 solution. The EDC cell showed specific discharge capacities of 2.06 and 3.21F/g using the ZP gel and H3PO4 solution, respectively. The EDC cell performed higher voltage retentionability for self-discharge behavior after constant voltage using the ZP gel (0.83V after 24h) than using H3PO4 solution (0.45V after 24h). Self-discharge behaviors of the ZP gel and H3PO4 solution were controlled by a diffusion and current leakage process, respectively. These results show that the ZP gel has a great potential for practical use as an EDC electrolyte.

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Effects of microstructural defects on the performance of base-metal multilayer ceramic capacitors

NASA Astrophysics Data System (ADS)

Samantaray, Malay M.

Multilayer ceramic capacitors (MLCCs), owing to their processing conditions, can exhibit microstructure defects such as electrode porosity and roughness. The effect of such extrinsic defects on the electrical performance of these devices needs to be understood in order to achieve successful miniaturization into the submicron dielectric layer thickness regime. Specifically, the presence of non-planar and discontinuous electrodes can lead to local field enhancements while the relative morphologies of two adjacent electrodes determine variations in the local dielectric thickness. To study the effects of electrode morphologies, an analytical approach is taken to calculate the electric field enhancement and leakage current with respect to an ideal parallel-plate capacitor. Idealized electrode defects are used to simulate the electric field distribution. It is shown that the electrode roughness causes both the electric field and the leakage current to increase with respect to that of the ideal flat parallel-plate capacitor. Moreover, finite element methods are used to predict electric field enhancements by as high as 100% within capacitor structures containing rough interfaces and porosity. To understand the influence of microstructural defects on field distributions and leakage current, the real three-dimensional microstructure of local regions in MLCCs are reconstructed using a serial-sectioning technique in the focused ion beam. These microstructures are then converted into a finite element model in order to simulate the perturbations in electric field due to the presence of electrode defects. The electric field is three times the average value, and this leads to increase in current density of these devices. It is also shown that increasing sintering rates of MLCCs leads to improved electrode morphology with smoother more continuous electrodes, which in turn leads to a decrease in electric field enhancement and calculated leakage current density. To simulate scaling effects, the dielectric layer thickness is reduced from 2.0mum to 0.5mum in the three-dimensional microstructure keeping the same electrode morphology. It is seen that the effect of microstructure defects is more pronounced as one approaches thinner layers, leading to higher local electric field concentrations and a concomitant drop in insulation resistance. It is also seen that the electric field values are as high as 3.8 times the average field in termination regions due the disintegrated structure of the electrodes. In order to assess the effect of microstructure on MLCC performance, two sets of multilayer capacitors subjected to two vastly different sintering rates of 150ºC/hr and 3000ºC/hr are compared for their electrical properties. Capacitors with higher electrode continuity exhibit proportionally higher capacitance, provided the grain size distributions are similar. From the leakage current measurements, it is found that the Schottky barrier at the electrode-dielectric interface controls the conduction mechanism. This barrier height is calculated to be 1.06 eV for slow-fired MLCCs and was 1.15 for fast-fired MLCCs. This shows that high concentration of electrode defects cause field perturbations and subsequent drop in the net Schottky barrier height. These results are further supported by frequency-dependent impedance measurements. With temperature dependence behavior of current-voltage trends we note that below temperatures of 135°C, the conduction is controlled by interfacial effects, whereas at higher temperatures it is consistent with bulk-controlled space charge limited current for the samples that are highly reoxidized. The final part of this work studies the various aspects of the initial stages of degradation of MLCCs. MLCCs subjected to unipolar and bipolar degradation are studied for changes in microstructure and electrical properties. With bipolar degradation studies new insights into degradation are gained. First, the ionic accumulation with oxygen vacancies at cathodes is only partially reversible. This has implications on the controlling interface with electronic conduction. Also, it is shown that oxygen vacancy accumulation near the cathodes leads to a drop in insulation resistance. The capacitance also increases with progressive steps of degradation due to the effective thinning of dielectric layer. The reduction in interfacial resistance is also confirmed by impedance analysis. Finally, it is observed that on degradation, the dominant leakage current mechanism changes from being controlled by cathodic injection of electrons to being controlled by their anodic extraction. (Abstract shortened by UMI.)

Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

2016-08-28

Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

Multiferroic properties in NdFeO3-PbTiO3 solid solutions

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Pal, Jaswinder; Kaur, Shubhpreet; Agrawal, P.; Singh, Mandeep; Singh, Anupinder

2018-05-01

The x(NdFeO3) - 1-x(PbTiO3) where x = 0.2 solid solution was prepared using solid state reaction route. The X-ray diffraction (XRD) data reveals the single phase formation. The microstructure shows grain growth with lesser porosity. The energy dispersive analysis confirms the presence of elements in stochiometric proportion. The polarization vs. Electric field loop estabilished a ferroelectric type behavior but lossy in nature. This lossy nature may be due to the presence of large leakage current in solid solution. The Magnetization vs. Magnetic field plot exhibits a unsaturated hysteriss loop indicates that the sample is not purely ferromagnetic.

In-Situ MVA of CO 2 Sequestration Using Smart Field Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohaghegh, Shahab D.

2014-09-01

Capability of underground carbon dioxide storage to confine and sustain injected CO 2 for a long period of time is the main concern for geologic CO 2 sequestration. If a leakage from a geological CO 2 sequestration site occurs, it is crucial to find the approximate amount and the location of the leak, in a timely manner, in order to implement proper remediation activities. An overwhelming majority of research and development for storage site monitoring has been concentrated on atmospheric, surface or near surface monitoring of the sequestered CO 2 . This study aims to monitor themore » integrity of CO 2 storage at the reservoir level. This work proposes developing in-situ CO 2 Monitoring and Verification technology based on the implementation of Permanent Down-hole Gauges (PDG) or “Smart Wells” along with Artificial Intelligence and Data Mining (AI&DM). The technology attempts to identify the characteristics of the CO 2 leakage by de-convolving the pressure signals collected from Permanent Down-hole Gauges (PDG). Citronelle field, a saline aquifer reservoir, located in the U.S. was considered as the basis for this study. A reservoir simulation model for CO 2 sequestration in the Citronelle field was developed and history matched. PDGs were installed, and therefore were considered in the numerical model, at the injection well and an observation well. Upon completion of the history matching process, high frequency pressure data from PDGs were generated using the history matched numerical model using different CO 2 leakage scenarios. Since pressure signal behaviors were too complicated to de-convolute using any existing mathematical formulations, a Machine Learning-based technology was introduced for this purpose. An Intelligent Leakage Detection System (ILDS) was developed as the result of this effort using the machine learning and pattern recognition technologies. The ILDS is able to detect leakage characteristics in a short period of time (less than a day from its occurrence) demonstrating the capability of the system in quantifying leakage characteristics subject to complex rate behaviors. The performance of ILDS is examined under different conditions such as multiple well leakages, cap rock leakage, availability of an additional monitoring well, presence of pressure drift and noise in the pressure sensor and uncertainty in the reservoir model.« less

Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Utama, M. Iqbal Bakti; Lu, Xin; Zhan, Da; Ha, Son Tung; Yuan, Yanwen; Shen, Zexiang; Xiong, Qihua

2014-10-01

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures. Electronic supplementary information (ESI) available: Further experiments on patterning and additional electrical characterizations data. See DOI: 10.1039/c4nr03817g

Acute respiratory symptoms and evacuation-related behavior after exposure to chlorine gas leakage.

PubMed

Han, Sung-Woo; Choi, Won-Jun; Yi, Min-Kee; Song, Seng-Ho; Lee, Dong-Hoon; Han, Sang-Hwan

2016-01-01

A study was performed on the accidental chlorine gas leakage that occurred in a factory of printed circuit boards manufactured without chlorine. Health examination was performed for all 52 workers suspected of exposure to chlorine gas, and their evacuation-related behaviors were observed in addition to analyzing the factors that affected the duration of their acute respiratory symptoms. Behavioral characteristics during the incidence of the accidental chlorine gas leakage, the estimated time of exposure, and the duration of subjective acute respiratory symptoms were investigated. In addition, clinical examination, chest radiography, and dental erosion test were performed. As variables that affected the duration of respiratory symptoms, dose group, body weight, age, sex, smoking, work period, and wearing a protective gear were included and analyzed by using the Cox proportional hazard model. Of 47 workers exposed to chlorine gas, 36 (77 %) developed more than one subjective symptom. The duration of the subjective symptoms according to exposure level significantly differed, with a median of 1 day (range, 0-5 days) in the low-exposure group and 2 days (range, 0-25 days) in the high-exposure group. Among the variables that affected the duration of the acute respiratory symptoms, which were analyzed by using the Cox proportional hazard model, only exposure level was significant (hazard ratio 2.087, 95 % CI = 1.119, 3.890). Regarding the evacuation-related behaviors, 22 workers (47 %) voluntarily evacuated to a safety zone immediately after recognizing the accidental exposure, but 25 workers (43 %) delayed evacuation until the start of mandatory evacuation (min 5, max 25 min). The duration of the subjective acute respiratory symptoms significantly differed between the low- and high-exposure groups. Among the 27 workers in the high-exposure group, 17 misjudged the toxicity after being aware of the gas leakage, which is a relatively high number.

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

NASA Technical Reports Server (NTRS)

Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre L.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.;

Low leakage current Ni/CdZnTe/In diodes for X/ γ-ray detectors

NASA Astrophysics Data System (ADS)

Sklyarchuk, V. M.; Gnatyuk, V. A.; Pecharapa, W.

2018-01-01

The electrical characteristics of the Ni/Cd1-xZnxTe/In structures with a metal-semiconductor rectifying contact are investigated. The diodes, fabricated on the base of In-doped n-type Cd1-xZnxTe (CZT) crystals with resistivity of ∼1010 Ω ṡ cm, have low leakage current and can be used as X/ γ-ray detectors. The rectifying contact was obtained by vacuum deposition of Ni on the semiconductor surface pretreated with argon plasma. The high barrier rectifying contact allowed us to increase applied reverse bias voltage up to 2500 V at the CZT crystal thickness of 1 mm. Dark (leakage) currents of the diodes with the rectifying contact area of 4 mm2 did not exceed 3-5 nA at bias voltage of 2000 V and room temperature. The charge transport mechanisms in the Ni/CZT/In structures have been interpreted as generation-recombination in the space charge region within the range of reverse bias of 5-100 V and as currents limited by space charge at both forward and reverse bias at V >100 V.

Methods and apparatus for measurement of the resistivity of geological formations from within cased wells in presence of acoustic and magnetic energy sources

DOEpatents

Vail, W.B. III.

1991-08-27

Methods and apparatus are provided for measuring the acoustically modulated electronic properties of geological formations and cement layers adjacent to cased boreholes. Current is passed from an electrode in electrical contact with the interior of the borehole casing to an electrode on the surface of the earth. Voltage measuring electrodes in electrical contact with the interior of the casing measure the voltage at various points thereon. The voltage differences between discrete pairs of the voltage measuring electrodes provide a measurement of the leakage current conducted into formation in the vicinity of those electrodes. Simultaneously subjecting the casing and formation to an acoustic source acoustically modulates the leakage current measured thereby providing a measure of the acoustically modulated electronic properties of the adjacent formation. Similarly, methods and apparatus are also described which measure the leakage current into formation while simultaneously subjecting the casing to an applied magnetic field which therefore allows measurement of the magnetically modulated electronic properties of the casing and the adjacent formation. 9 figures.

Methods and apparatus for measurement of the resistivity of geological formations from within cased wells in presence of acoustic and magnetic energy sources

DOEpatents

Vail, III, William B.

1991-01-01

Methods and apparatus are provided for measuring the acoustically modulated electronic properties of geological formations and cement layers adjacent to cased boreholes. Current is passed from an electrode in electrical contact with the interior of the borehole casing to an electrode on the surface of the earth. Voltage measuring electrodes in electrical contact with the interior of the casing measure the voltage at various points thereon. The voltage differences between discrete pairs of the voltage measuring electrodes provide a measurement of the leakage current conducted into formation in the vicinity of those electrodes. Simultaneously subjecting the casing and formation to an acoustic source acoustically modulates the leakage current measured thereby providing a measure of the acoustically modulated electronic properties of the adjacent formation. Similarly, methods and apparatus are also described which measure the leakage current into formation while simultaneously subjecting the casing to an applied magnetic field which therefore allows measurement of the magnetically modulated electronic properties of the casing and the adjacent formation.

Thrombogenic potential of transcatheter aortic valve implantation with trivial paravalvular leakage

PubMed Central

Siegel, Rolland

2014-01-01

Background Significant paravalvular leakage after transcatheter aortic valve implantation (TAVI) correlates with increased morbidity and mortality, but adverse consequences of trivial paravalvular leakage have stimulated few investigations. Using a unique method distinctly different from other diagnostic approaches, we previously reported elevated backflow velocities of short duration (transients) in mechanical valve closure. In this study, similar transients were found in a transcatheter valve paravalvular leakage avatar. Methods Paravalvular leakage rate (zero to 58 mL/second) and aortic valve incompetence (volumetric back flow/forward flow; zero to 32%) were made adjustable using a mock transcatheter aortic valve device and tested in quasi-steady and pulsatile flow test systems. Projected dynamic valve area (PDVA) from the back illuminated mock transcatheter aortic valve device was measured and regional backflow velocities were derived by dividing volumetric flow rate by the PDVA over the open and closing valve phase and the total closed valve area derived from backflow leakage. Results Aortic incompetence from 1-32% generated negative backflow transients from 8 to 267 meters/second, a range not dissimilar to that measured in mechanical valves with zero paravalvular leakage. Optimal paravalvular leakage was identified; not too small generating high backflow transients, not too large considering volume overload and cardiac energy loss caused by defective valve behavior and fluid motion. Conclusions Thrombogenic potential of transcatheter aortic valves with trivial aortic incompetence and high magnitude regional backflow velocity transients was comparable to mechanical valves. This may have relevance to stroke rate, asymptomatic microembolic episodes and indications for anticoagulation therapy after transcatheter valve insertion. PMID:25333018

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beck, Patrick R.

2010-01-07

Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current ormore » leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.« less

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

NASA Astrophysics Data System (ADS)

Bala, Shashi; Khosla, Mamta

2018-04-01

A double-gate tunnel field-effect transistor (DG tunnel FET) has been designed and investigated for various channel materials such as silicon (Si), gallium arsenide (GaAs), alminium gallium arsenide (Al x Ga1‑x As) and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are compared on the basis of inverse subthreshold slope (SS), I ON/I OFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the Al x Ga1‑x As based DG tunnel FET provides a better I ON/I OFF current ratio (2.51 × 106) as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musolino, M.; Treeck, D. van, E-mail: treeck@pdi-berlin.de; Tahraoui, A.

2016-01-28

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. Themore » temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.« less

Development of advanced seals for space propulsion turbomachinery

NASA Technical Reports Server (NTRS)

Hendricks, R. C.; Liang, A. D.; Childs, D. W.; Proctor, M. P.

1992-01-01

Current activities in seals for space propulsion turbomachinery that the NASA Lewis Research Center sponsors are surveyed. The overall objective is to provide the designer and researcher with the concepts and the data to control seal dynamics and leakage. Included in the program are low-leakage seals, such as the brush seal, the 'ceramic rope' seal, low-leakage seals for liquid oxygen turbopumps, face seals for two phase flow, and swirl brakes for stability. Two major efforts are summarized: a seal dynamics in rotating machinery and an effort in seal code development.

2D Quantum Mechanical Study of Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

2000-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

NASA Astrophysics Data System (ADS)

Takagi, Kensuke; Ono, Tomoya

2018-06-01

The relationship between the position of oxygen vacancies in HfO2/SiO2/Si gate stacks and the leakage current is studied by first-principles electronic-structure and electron-conduction calculations. We find that the increase in the leakage current due to the creation of oxygen vacancies in the HfO2 layer is much larger than that in the SiO2 interlayer. According to previous first-principles total energy calculations, the formation energy of oxygen vacancies is smaller in the SiO2 interlayer than that in the HfO2 layer under the same conditions. Therefore, oxygen vacancies will be attracted from the SiO2 interlayer to minimize the energy, thermodynamically justifying the scavenging technique. Thus, the scavenging process efficiently improves the dielectric constant of HfO2-based gate stacks without increasing the number of oxygen vacancies, which cause the dielectric breakdown.

Influence of B doping on the carrier transport mechanism and barrier height of graphene/ZnO Schottky contact

NASA Astrophysics Data System (ADS)

Li, Yapeng; Li, Yingfeng; Zhang, Jianhua; Tong, Ting; Ye, Wei

2018-03-01

The ZnO films were fabricated on the surface of n-Si(1 1 1) substrate using the sol-gel method, and the graphene was then transferred to its surface for the fabrication of the graphene/ZnO Schottky contact. The results showed that ZnO films presented a strong (0 0 2) preferred direction, and that the particle sizes on the surface decreased as the doping concentration of B ions increased. The electrical properties of the graphene/ZnO Schottky contact were measured by using current-voltage measurements. It was found that the graphene/ZnO Schottky contact showed a fine rectification behavior when the doping concentration of B ions was increased. However, when the doping concentration of the B ions increased to 0.15 mol l-1, the leakage current increased and rectification behavior weakened. This was due to the Fermi level pinning caused by the presence of the O vacancy at the interface of the graphene/ZnO Schottky contact.

Analysis of the Effects of Calcium or Magnesium on Voltage-Clamp Currents in Perfused Squid Axons Bathed in Solutions of High Potassium

PubMed Central

Rojas, Eduardo; Taylor, Robert E.; Atwater, Illani; Bezanilla, Francisco

1969-01-01

Isolated axons from the squid, Dosidicus gigas, were internally perfused with potassium fluoride solutions. Membrane currents were measured following step changes of membrane potential in a voltage-clamp arrangement with external isosmotic solution changes in the order: potassium-free artificial seawater; potassium chloride; potassium chloride containing 10, 25, 40 or 50, mM calcium or magnesium; and potassium-free artificial seawater. The following results suggest that the currents measured under voltage clamp with potassium outside and inside can be separated into two components and that one of them, the predominant one, is carried through the potassium system. (a) Outward currents in isosmotic potassium were strongly and reversibly reduced by tetraethylammonium chloride. (b) Without calcium or magnesium a progressive increase in the nontime-dependent component of the currents (leakage) occurred. (c) The restoration of calcium or magnesium within 15–30 min decreases this leakage. (d) With 50 mM divalent ions the steady-state current-voltage curve was nonlinear with negative resistance as observed in intact axons in isosmotic potassium. (e) The time-dependent components of the membrane currents were not clearly affected by calcium or magnesium. These results show a strong dependence of the leakage currents on external calcium or magnesium concentration but provide no support for the involvement of calcium or magnesium in the kinetics of the potassium system. PMID:5823216

Analysis of the effects of calcium or magnesium on voltage-clamp currents in perfused squid axons bathed in solutions of high potassium.

PubMed

Rojas, E; Taylor, R E; Atwater, I; Bezanilla, F

1969-10-01

Isolated axons from the squid, Dosidicus gigas, were internally perfused with potassium fluoride solutions. Membrane currents were measured following step changes of membrane potential in a voltage-clamp arrangement with external isosmotic solution changes in the order: potassium-free artificial seawater; potassium chloride; potassium chloride containing 10, 25, 40 or 50, mM calcium or magnesium; and potassium-free artificial seawater. The following results suggest that the currents measured under voltage clamp with potassium outside and inside can be separated into two components and that one of them, the predominant one, is carried through the potassium system. (a) Outward currents in isosmotic potassium were strongly and reversibly reduced by tetraethylammonium chloride. (b) Without calcium or magnesium a progressive increase in the nontime-dependent component of the currents (leakage) occurred. (c) The restoration of calcium or magnesium within 15-30 min decreases this leakage. (d) With 50 mM divalent ions the steady-state current-voltage curve was nonlinear with negative resistance as observed in intact axons in isosmotic potassium. (e) The time-dependent components of the membrane currents were not clearly affected by calcium or magnesium. These results show a strong dependence of the leakage currents on external calcium or magnesium concentration but provide no support for the involvement of calcium or magnesium in the kinetics of the potassium system.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

A novel model of persistent retinal neovascularization for the development of sustained anti-VEGF therapies.

PubMed

Li, Yong; Busoy, Joanna Marie; Zaman, Ben Alfyan Achirn; Tan, Queenie Shu Woon; Tan, Gavin Siew Wei; Barathi, Veluchamy Amutha; Cheung, Ning; Wei, Jay Ji-Ye; Hunziker, Walter; Hong, Wanjin; Wong, Tien Yin; Cheung, Chui Ming Gemmy

2018-05-28

Anti-vascular endothelial growth factor (VEGF) therapies lead to a major breakthrough in treatment of neovascular retinal diseases such as age-related macular degeneration or diabetic retinopathy. Current management of these conditions require regular and frequent intravitreal injections to prevent disease recurrence once the effect of the injected drug wears off. This has led to a pressing clinical need of developing sustained release formulations or therapies with longer duration. A major drawback in developing such therapies is that the currently available animal models show spontaneous regression of vascular leakage. They therefore not only fail to recapitulate retinal vascular disease in humans, but also prevent to discern if regression is due to prolonged therapeutic effect or simply reflects spontaneous healing. Here, we described the development of a novel rabbit model of persistent retinal neovascularization (PRNV). Retinal Müller glial are essential for maintaining the integrity of the blood-retinal barrier. Intravitreal injection of DL-alpha-aminoadipic acid (DL-AAA), a selective retinal glial (Müller) cell toxin, results in persistent vascular leakage for up to 48 weeks. We demonstrated that VEGF concentrations were significantly increased in vitreous suggesting VEGF plays a significant role in mediating the leakage observed. Intravitreal administration of anti-VEGF drugs (e.g. bevacizumab, ranibizumab and aflibercept) suppresses vascular leakage for 8-10 weeks, before recurrence of leakage to pre-treatment levels. All three anti-VEGF drugs are very effective in re-ducing angiographic leakage in PRNV model, and aflibercept demonstrated a longer duration of action compared with the others, reminiscent of what is observed with these drugs in human in the clinical setting. Therefore, this model provides a unique tool to evaluate novel anti-VEGF formulations and therapies with respect to their duration of action in comparison to the currently used drugs. Copyright © 2018 Elsevier Ltd. All rights reserved.

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

The electrorheological performance of polyaniline-based hybrid particles suspensions in silicone oil: influence of the dispersing medium viscosity

NASA Astrophysics Data System (ADS)

Roman, C.; García-Morales, M.; Goswami, S.; Marques, A. C.; Cidade, M. T.

2018-07-01

The potential of electrorheological (ER) suspensions based on polarizable particles in simple liquids relies on the particles arrangements which turn their quasi Newtonian behavior into gel-like. However, minor attention has been paid to the effect provoked by the liquid viscosity on the ease of orientation and assembly of the particles. With this aim, a study on the ER behavior, at 25 °C, of 1 wt% suspensions of polyaniline (PANI)-based hybrid particles (—graphene or —tungstene oxide) in silicone oil with varying viscosities (20, 50 and 100 cSt) was carried out. The electric field effect was higher for the PANI-graphene particles suspension in the less viscous silicone oil. However, two drawbacks were observed: (a) higher leakage current flows; and (b) reduced reversibility upon the electric field was turned off. The use of silicone oil with higher viscosity solved these issues.

Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

NASA Astrophysics Data System (ADS)

Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne

2017-04-01

Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.

Phase transitions and electrical behavior of lead-free (K0.50Na0.50)NbO3 thin film

NASA Astrophysics Data System (ADS)

Wu, Jiagang; Wang, John

2009-09-01

Lead-free (K0.50Na0.50)NbO3 (KNN) thin films with a high degree of (100) preferred orientation were deposited on the SrRuO3-buffered SrTiO3(100) substrate by off-axis radio frequency magnetron sputtering. They possess lower phase transition temperatures (To-t˜120 °C and Tc˜310 °C), as compared to those of KNN bulk ceramic (To-t˜190 °C and Tc˜400 °C). They also demonstrate enhanced ferroelectric behavior (e.g., 2Pr=24.1 μc/cm2) and fatigue endurance, together with a lower dielectric loss (tan δ ˜0.017) and a lower leakage current, as compared to the bulk ceramic counterpart. Oxygen vacancies are shown to be involved in the conduction of the KNN thin film.

Modeling Human Behavior to Anticipate Insider Attacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greitzer, Frank L.; Hohimer, Ryan E.

2011-06-09

The insider threat ranks among the most pressing cybersecurity challenges that threaten government and industry information infrastructures. To date, no systematic methods have been developed that provide a complete and effective approach to prevent data leakage, espionage and sabotage. Current practice is forensic in nature, relegating to the analyst the bulk of the responsibility to monitor, analyze, and correlate an overwhelming amount of data. We describe a predictive modeling framework that integrates a diverse set of data sources from the cyber domain as well as inferred psychological/motivational factors that may underlie malicious insider exploits. This comprehensive threat assessment approach providesmore » automated support for the detection of high-risk behavioral “triggers” to help focus the analyst’s attention and inform the analysis. Designed to be domain independent, the system may be applied to many different threat and warning analysis/sensemaking problems.« less

Behavioral responses of Arctica islandica (Bivalvia: Arcticidae) to simulated leakages of carbon dioxide from sub-sea geological storage.

PubMed

Bamber, Shaw D; Westerlund, Stig

2016-11-01

Sub-sea geological storage of carbon dioxide (CO 2 ) provides a viable option for the Carbon Capture and Storage (CCS) approach for reducing atmospheric emissions of this greenhouse gas. Although generally considered to offer a low risk of major leakage, it remains relevant to establish the possible consequences for marine organisms that live in or on sediments overlying these storage areas if such an event may occur. The present study has used a series of laboratory exposures and behavioral bioassays to establish the sensitivity of Arctica islandica to simulated leakages of CO 2 . This long-lived bivalve mollusc is widely distributed throughout the North Sea, an area where geological storage is currently taking place and where there are plans to expand this operation significantly. A recently published model has predicted a maximum drop of 1.9pH units in seawater at the point source of a substantial escape of CO 2 from sub-sea geological storage in this region. Valve movements of A. islandica exposed to reduced pH seawater were recorded continuously using Hall effect proximity sensors. Valve movement regulation is important for optimising the flow of water over the gills, which supplies food and facilitates respiration. A stepwise reduction in seawater pH showed an initial increase in both the rate and extent of valve movements in the majority of individuals tested when pH fell to 6.2 units. Exposing A. islandica to pH 6.2 seawater continuously for seven days resulted in a clear increase in valve movements during the first 40h of exposure, followed by a gradual reduction in activity intensity over the subsequent five days, suggesting acclimation. The ability of both exposed and control bivalves to burrow successfully into sediment on completion of this exposure was very similar. A final exposure trial, testing whether increased valve movements initiated by reduced pH were related to foot extension during attempted burrowing, found no such association. In summary, significant changes in valve behavior did not occur until seawater pH fell to 6.2 units. The response took the form of an increase in valve activity rather than closure. The absence of foot extension coincident with increased valve movements indicates A. islandica were not attempting to burrow, leaving the possibility that valve movements are supporting a respiratory response to hypercapnia. In conclusion, A. islandica appears to be tolerant of reductions in seawater pH equivalent to those predicted for substantial losses of CO 2 through leakage from sub-sea geological storage. Copyright © 2016 Elsevier B.V. All rights reserved.

Electrical leakage detection circuit

DOEpatents

Wild, Arthur

2006-09-05

A method is provided for detecting electrical leakage between a power supply and a frame of a vehicle or machine. The disclosed method includes coupling a first capacitor between a frame and a first terminal of a power supply for a predetermined period of time. The current flowing between the frame and the first capacitor is limited to a predetermined current limit. It is determined whether the voltage across the first capacitor exceeds a threshold voltage. A first output signal is provided when the voltage across the capacitor exceeds the threshold voltage.

Application of Arrester Simulation Device in Training

NASA Astrophysics Data System (ADS)

Baoquan, Zhang; Ziqi, Chai; Genghua, Liu; Wei, Gao; Kaiyue, Wu

2017-12-01

Combining with the arrester simulation device put into use successfully, this paper introduces the application of arrester test in the insulation resistance measurement, counter test, Leakage current test under DC 1mA voltage and leakage current test under 0.75U1mA. By comparing with the existing training, this paper summarizes the arrester simulation device’s outstanding advantages including real time monitoring, multi-type fault data analysis and acousto-optic simulation. It effectively solves the contradiction between authenticity and safety in the existing test training, and provides a reference for further training.

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

2017-06-01

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Measurements of leakage from Lake Michigan through three control structures near Chicago, Illinois, April-October 1993

USGS Publications Warehouse

Oberg, K.A.; Schmidt, A.R.

1994-01-01

A total of 213 measurements of leakage were made at three control structures near Chicago, Ill.--the Chicago River Controlling Works (CRCW), Thomas J. O'Brien Lock and Dam (O'Brien), and Wilmette Pumping Station (Wilmette)--using acoustic Doppler current profilers (ADCP's) and dye-dilution techniques. The CRCW consists of the Chicago Lock and two sets of sluice gates connected by a network of harbor walls. Leakage measurements were made in April, May, July, September, and October 1993 using an ADCP. The mean and standard deviation of leakage measured by the ADCP for the Chicago Lock river gate were 133 and 39 cubic feet per second, respectively. The mean and standard deviation of the leakage measurements at CRCW were 204 and 70 cubic feet per second, respectively. The mean and standard deviation of leakage measurements at O'Brien on September 17, 1993, were 21 and 10 cubic feet per second, respectively. The mean and standard deviation leakage measured at Wilmette using the ADCP were 59 and 8 cubic feet per second, respectively, in April 1993. After the pump bays at Wilmette were sealed in July 1993, the leakage dropped to less than 15 cubic feet per second in September 1993. Discharge estimated by dye-dilution at the Chicago Lock on July 15, 1993, was 160 cubic feet per second, or within 8 percent of the discharge measured with the ADCP. (USGS)

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M.

2012-09-01

The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.

Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

NASA Technical Reports Server (NTRS)

Wang, Y. C.; Bahrami, M.

1983-01-01

Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

Influence of Sample Size of Polymer Materials on Aging Characteristics in the Salt Fog Test

NASA Astrophysics Data System (ADS)

Otsubo, Masahisa; Anami, Naoya; Yamashita, Seiji; Honda, Chikahisa; Takenouchi, Osamu; Hashimoto, Yousuke

Polymer insulators have been used in worldwide because of some superior properties; light weight, high mechanical strength, good hydrophobicity etc., as compared with porcelain insulators. In this paper, effect of sample size on the aging characteristics in the salt fog test is examined. Leakage current was measured by using 100 MHz AD board or 100 MHz digital oscilloscope and separated three components as conductive current, corona discharge current and dry band arc discharge current by using FFT and the current differential method newly proposed. Each component cumulative charge was estimated automatically by a personal computer. As the results, when the sample size increased under the same average applied electric field, the peak values of leakage current and each component current increased. Especially, the cumulative charges and the arc discharge length of dry band arc discharge increased remarkably with the increase of gap length.

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

NASA Astrophysics Data System (ADS)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Manfredi, P. F.; Marshall, R. D.; Mishina, M.; Le Normand, F.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-04-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/ c and 500 Mev protons up to a fluence of 5×10 15 p/cm 2. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1×10 15 p/cm 2 and decreases by ≈40% at 5×10 15 p/cm 2. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/ c and 500 MeV protons up to at least 1×10 15p/cm 2 without signal loss.

Containment penetration elastomer seal leak rate tests

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bridges, T.L.

1987-07-01

Tests were performed on three elastomer seal designs commonly used for nuclear plant containment mechanical penetrations. The objective of this research project is to obtain an understanding of the integrity and leakage behavior of these seal designs under severe accident temperature and pressure conditions. The three designs tested and the seal materials used in the tests were: (1) double tongue-and-groove design with silicone rubber seals, (2) double-O-ring design with neoprene and ethylene-propylene (EPDM) seals, and (3) double gumdrop design with neoprene and EPDM seals. The effects of thermal aging and angular rotations of flange mating surfaces were determined. The testmore » results provide information required to characterize the leakage behavior of penetrations under severe accident conditions. 3 refs., 10 figs., 12 tabs.« less

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Leakage and field emission in side-gate graphene field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current densitymore » as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.« less

Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

NASA Astrophysics Data System (ADS)

Kiyota, Yuji; Itaka, Kenji; Iwashita, Yuta; Adachi, Tetsuya; Chikyow, Toyohiro; Ogura, Atsushi

2011-06-01

We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5×10-7 A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ˜25 within the allowed leakage level of 5×10-7 A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).

Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Meng, Xiao; Wang, Lai; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-01-01

Efficiency droop is currently one of the most popular research problems for GaN-based light-emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is optimized to accurately determine carrier lifetimes (τ) of blue and green LEDs under different injection current (I). By fitting the τ-I curves and the efficiency droop curves of the LEDs according to the ABC carrier rate equation model, the impact of Auger recombination and carrier leakage on efficiency droop can be characterized simultaneously. For the samples used in this work, it is found that the experimental τ-I curves cannot be described by Auger recombination alone. Instead, satisfactory fitting results are obtained by taking both carrier leakage and carriers delocalization into account, which implies carrier leakage plays a more significant role in efficiency droop at high injection level.

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovici, M., E-mail: Mihaela.Ioana.Popovici@imec.be; Swerts, J.; Redolfi, A.

2014-02-24

Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electricallymore » active defects and is essential to achieve a low leakage current in the MIM capacitor.« less

Automated Quantitative Characterization of Retinal Vascular Leakage and Microaneurysms in Ultra-widefield Fluorescein Angiography

PubMed Central

Ehlers, Justis P.; Wang, Kevin; Vasanji, Amit; Hu, Ming; Srivastava, Sunil K.

2017-01-01

Summary Ultra-widefield fluorescein angiography (UWFA) is an emerging imaging modality used to characterize pathology in the retinal vasculature such as microaneurysms (MA) and vascular leakage. Despites its potential value for diagnosis and disease surveillance, objective quantitative assessment of retinal pathology by UWFA is currently limited because it requires laborious manual segmentation by trained human graders. In this report, we describe a novel fully automated software platform, which segments MAs and leakage areas in native and dewarped UWFA images with retinal vascular disease. Comparison of the algorithm to human grader generated gold standards demonstrated significant strong correlations for MA and leakage areas (ICC=0.78-0.87 and ICC=0.70-0.86, respectively, p=2.1×10-7 to 3.5×10-10 and p=7.8×10-6 to 1.3×10-9, respectively). These results suggest the algorithm performs similarly to human graders in MA and leakage segmentation and may be of significant utility in clinical and research settings. PMID:28432113

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE PAGES

King, M. P.; Wu, X.; Eller, Manfred; ...

2016-12-07

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, M. P.; Wu, X.; Eller, Manfred

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

Indoor-Outdoor Air Leakage of Apartments and Commercial Buildings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Price, P.N.; Shehabi, A.; Chan, R.W.

We compiled and analyzed available data concerning indoor-outdoor air leakage rates and building leakiness parameters for commercial buildings and apartments. We analyzed the data, and reviewed the related literature, to determine the current state of knowledge of the statistical distribution of air exchange rates and related parameters for California buildings, and to identify significant gaps in the current knowledge and data. Very few data were found from California buildings, so we compiled data from other states and some other countries. Even when data from other developed countries were included, data were sparse and few conclusive statements were possible. Little systematicmore » variation in building leakage with construction type, building activity type, height, size, or location within the u.s. was observed. Commercial buildings and apartments seem to be about twice as leaky as single-family houses, per unit of building envelope area. Although further work collecting and analyzing leakage data might be useful, we suggest that a more important issue may be the transport of pollutants between units in apartments and mixed-use buildings, an under-studied phenomenon that may expose occupants to high levels of pollutants such as tobacco smoke or dry cleaning fumes.« less

Reduction of the spatially mutual coupling between dual-polarized patch antennas using coupled metamaterial slabs.

PubMed

Pan, Bai Cao; Tang, Wen Xuan; Qi, Mei Qing; Ma, Hui Feng; Tao, Zui; Cui, Tie Jun

2016-07-22

Mutual coupling inside antenna array is usually caused by two routes: signal leakage via conducting currents on the metallic background or surface wave along substrates; radio leakage received from space between antenna elements. The former one can be depressed by changing the distribution of surface currents, as reported in literatures. But when it comes to the latter one, the radiation-leakage-caused coupling, traditional approaches using circuit manipulation may be inefficient. In this article, we propose and design a new type of decoupling module, which is composed of coupled metamaterial (MTM) slabs. Two classes of MTM particles, the interdigital structure (IS) and the split-ring resonators (SRRs), are adopted to provide the first and second modulations of signal. We validate its function to reduce the radiation leakage between two dual-polarized patch antennas. A prototype is fabricated in a volume with subwavelength scale (0.6λ × 0.3λ × 0.053λ) to provide 7dB improvement for both co-polarization and cross-polarization isolations from 1.95 to 2.2 GHz. The design has good potential for wireless communication and radar systems.

Reduction of the spatially mutual coupling between dual-polarized patch antennas using coupled metamaterial slabs

PubMed Central

Pan, Bai Cao; Tang, Wen Xuan; Qi, Mei Qing; Ma, Hui Feng; Tao, Zui; Cui, Tie Jun

2016-01-01

Mutual coupling inside antenna array is usually caused by two routes: signal leakage via conducting currents on the metallic background or surface wave along substrates; radio leakage received from space between antenna elements. The former one can be depressed by changing the distribution of surface currents, as reported in literatures. But when it comes to the latter one, the radiation-leakage-caused coupling, traditional approaches using circuit manipulation may be inefficient. In this article, we propose and design a new type of decoupling module, which is composed of coupled metamaterial (MTM) slabs. Two classes of MTM particles, the interdigital structure (IS) and the split-ring resonators (SRRs), are adopted to provide the first and second modulations of signal. We validate its function to reduce the radiation leakage between two dual-polarized patch antennas. A prototype is fabricated in a volume with subwavelength scale (0.6λ × 0.3λ × 0.053λ) to provide 7dB improvement for both co-polarization and cross-polarization isolations from 1.95 to 2.2 GHz. The design has good potential for wireless communication and radar systems. PMID:27444147

Magnon cotunneling through a quantum dot

NASA Astrophysics Data System (ADS)

Karwacki, Łukasz

2017-11-01

I consider a single-level quantum dot coupled to two reservoirs of spin waves (magnons). Such systems have been studied recently from the point of view of possible coupling between electronic and magnonic spin currents. However, usually weakly coupled systems were investigated. When coupling between the dot and reservoirs is not weak, then higher order processes play a role and have to be included. Here I consider cotunneling of magnons through a spin-occupied quantum dot, which can be understood as a magnon (spin) leakage current in analogy to leakage currents in charge-based electronics. Particular emphasis has been put on investigating the effect of magnetic field and temperature difference between the magnonic reservoirs.

Space-charge limited current in CdTe thin film solar cell

NASA Astrophysics Data System (ADS)

Li, Qiang; Shen, Kai; Li, Xun; Yang, Ruilong; Deng, Yi; Wang, Deliang

2018-04-01

In this study, we demonstrate that space-charge limited current (SCLC) is an intrinsic current shunting leakage in CdTe thin film solar cells. The SCLC leakage channel, which is formed by contact between the front electrode, CdTe, and the back electrode, acts as a metal-semiconductor-metal (MSM) like transport path. The presence of SCLC leaking microchannels in CdTe leads to a band bending at the MSM structure, which enhances minority carrier recombination and thus decreases the minority carrier lifetime in CdTe thin film solar cells. SCLC was found to be a limiting factor both for the fill factor and the open-circuit voltage of CdTe thin film solar cells.

FAST TRACK COMMUNICATION: Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

NASA Astrophysics Data System (ADS)

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

2008-09-01

The electrical characteristics, i.e. leakage current and capacitance, of ZrO2 based metal-insulator-metal structures, grown at 225, 250 and 275 °C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 °C deposition temperature, while the highest dielectric constant (k ~ 43) was measured for the samples grown at 275 °C, most probably due to the formation of tetragonal/cubic phases in the ZrO2 layer. We have shown that the main leakage current of these ZrO2 capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 °C deposition temperature the oxygen content at and beyond the ZrO2/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiOxNy interface layer. At and above 275 °C the ZrO2 layer changes its structure and becomes crystalline as proven by XRD analysis.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhi, Ting; Tao, Tao; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Through investigating the temperature dependent current-voltage (T-I-V) properties of GaN based blue and green LEDs in this study, we propose an asymmetric tunneling model to understand the leakage current below turn-on voltage (V < 3.2 V): At the forward bias within 1.5 V ∼ 2.1 V (region 1), the leakage current is main attributed to electrons tunneling from the conduction band of n-type GaN layer to the valence band of p-type GaN layer via defect states in space-charge region (SCR); While, at the forward bias within 2 V ∼ 2.4 V (region 2), heavy holes tunneling gradually becomes dominant atmore » low temperature (T < 200K) as long as they can overcome the energy barrier height. The tunneling barrier for heavy holes is estimated to be lower than that for electrons, indicating the heavy holes might only tunnel to the defect states. This asymmetric tunneling model shows a novel carrier transport process, which provides better understanding of the leakage characteristics and is vital for future device improvements.« less

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Magnetic, ferroelectric and leakage current properties of gadolinium doped bismuth ferrite thin films by sol-gel method

NASA Astrophysics Data System (ADS)

Chen, Hone-Zern; Kao, Ming-Cheng; Young, San-Lin; Hwang, Jun-Dar; Chiang, Jung-Lung; Chen, Po-Yen

2015-05-01

Bi0.9Gd0.1FeO3 (BGFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel technology. The effects of annealing temperature (400-700 °C) on microstructure and multiferroic properties of thin films were investigated. The X-ray diffraction analysis showed that the BGFO thin films had an orthorhombic structure. The thin films showed ferroelectric and ferromagnetic properties with remanent polarization (2Pr) of 10 μC/cm2, remnant magnetization (2Mr) of 2.4 emu/g and saturation magnetization (Ms) of 5.3 emu/g. A small leakage current density (J) was 4.64×10-8 A/cm2 under applied field 100 kV/cm. It was found that more than one conduction mechanism is involved in the electric field range used in these experiments. The leakage current mechanisms were controlled by Poole-Frenkel emission in the low electric field region and by Schottky emission from the Pt electrode in the high field region.

An evaluation of an ICCD imager of dynamic range expansion technique and application of insitu procedures for life-time extension

NASA Technical Reports Server (NTRS)

Currie, D. G.

1982-01-01

Research toward practical implementation of the Intensified Charge Coupled Device (ICCD) as a photon-counting array detector for astronomy is reported. The first area of concentration was to determine the rate and extent of the lifetime limiting damage to the CCD caused by the impact of high energy electrons, and to find whether various methods of annealing the damage were productive. The second effort was to determine the performance of the ICCD in a photon-counting mode to produce extended dynamic range measurements. There are two main effects that appear as the practical results of the electron damage to the CCD. One is an increase in the leakage current, i.e., the normal thermal generation of charge carriers in the silicon that provides a background dark signal that adds to the light produced image. In an undamaged CCD, the leakage current is usually fairly uniform across the photosensitive area of the silicon chip, with the exception of various bright pixels which have an anomalous leakage current well above the overall level.

Effects of Double-Leakage Tip Clearance Flow on the Performance of a Compressor Stage with a Large Rotor Tip Gap

NASA Technical Reports Server (NTRS)

Hah, Chunill

2016-01-01

Effects of a large rotor tip gap on the performance of a one and half stage axial compressor are investigated in detail with a numerical simulation based on LES and available PIV data. The current paper studies the main flow physics, including why and how the loss generation is increased with the large rotor tip gap. The present study reveals that when the tip gap becomes large, tip clearance fluid goes over the tip clearance core vortex and enters into the next blade's tip gap, which is called double-leakage tip clearance flow. As the tip clearance flow enters into the adjacent blade's tip gap, a vortex rope with a lower pressure core is generated. This vortex rope breaks up the tip clearance core vortex of the adjacent blade, resulting in a large additional mixing. This double-leakage tip clearance flow occurs at all operating conditions, from design flow to near stall condition, with the large tip gap for the current compressor stage. The double-leakage tip clearance flow, its interaction with the tip clearance core vortex of the adjacent blade, and the resulting large mixing loss are the main flow mechanism of the large rotor tip gap in the compressor. When the tip clearance is smaller, flow near the end wall follows more closely with the main passage flow and this double-leakage tip clearance flow does not happen near the design flow condition for the current compressor stage. When the compressor with a large tip gap operates at near stall operation, a strong vortex rope is generated near the leading edge due to the double-leakage flow. Part of this vortex separates from the path of the tip clearance core vortex and travels from the suction side of the blade toward the pressure side of the blade. This vortex is generated periodically at near stall operation with a large tip gap. As the vortex travels from the suction side to the pressure side of the blade, a large fluctuation of local pressure forces blade vibration. Nonsynchronous blade vibration occurs due to this vortex as the frequency of this vortex generation is not the same as the rotor. The present investigation confirms that this vortex is a part of separated tip clearance vortex, which is caused by the double-leakage tip clearance flow.

Quantitative Investigation of Room-Temperature Breakdown Effects in Pixelated TlBr Detectors

NASA Astrophysics Data System (ADS)

Koehler, Will; He, Zhong; Thrall, Crystal; O'Neal, Sean; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-10-01

Due to favorable material properties such as high atomic number (Tl: 81, Br: 35), high density ( 7.56 g/cm3), and a wide band gap (2.68 eV), thallium-bromide (TlBr) is currently under investigation for use as an alternative room-temperature semiconductor gamma-ray spectrometer. TlBr detectors can achieve less than 1% FWHM energy resolution at 662 keV, but these results are limited to stable operation at - 20°C. After days to months of room-temperature operation, ionic conduction causes these devices to fail. This work correlates the varying leakage current with alpha-particle and gamma-ray spectroscopic performances at various operating temperatures. Depth-dependent photopeak centroids exhibit time-dependent transient behavior, which indicates trapping sites form near the anode surface during room-temperature operation. After refabrication, similar performance and functionality of failed detectors returned.

Vibration energy harvesting based on stress-induced polarization switching: a phase field approach

NASA Astrophysics Data System (ADS)

Wang, Dan; Wang, Linxiang; Melnik, Roderick

2017-06-01

Different from the traditional piezoelectric vibration energy harvesting, a new strategy based on stress-induced polarization switching has been proposed in the current paper. Two related prototypes are presented and the associated advantages and drawbacks have been discussed in detail. It has been demonstrated that, with the assistance of a bias electric field, the robustness of the energy harvesters is improved. Furthermore, the real-space phase-field model has been employed to study the nonlinear hysteretic behavior involved in the proposed energy harvesting process. A substantially larger electric current associated with the stress-induced polarization switching has been demonstrated when compared with that with piezoelectric effect. In addition, the effects of bias electric potential, bias resistance, mechanical boundary conditions, charge leakage and electrodes arrangements have also been investigated by the phase-field simulation, which provides a guidance for future real implementations.

Unified computational model of transport in metal-insulating oxide-metal systems

NASA Astrophysics Data System (ADS)

Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

2018-04-01

A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

Dark current reduction of Ge photodetector by GeO₂ surface passivation and gas-phase doping.

PubMed

Takenaka, Mitsuru; Morii, Kiyohito; Sugiyama, Masakazu; Nakano, Yoshiaki; Takagi, Shinichi

2012-04-09

We have investigated the dark current of a germanium (Ge) photodetector (PD) with a GeO₂ surface passivation layer and a gas-phase-doped n+/p junction. The gas-phase-doped PN diodes exhibited a dark current of approximately two orders of magnitude lower than that of the diodes formed by a conventional ion implantation process, indicating that gas-phase doping is suitable for low-damage PN junction formation. The bulk leakage (Jbulk) and surface leakage (Jsurf) components of the dark current were also investigated. We have found that GeO₂ surface passivation can effectively suppress the dark current of a Ge PD in conjunction with gas-phase doping, and we have obtained extremely low values of Jbulk of 0.032 mA/cm² and Jsurf of 0.27 μA/cm.

A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables

NASA Astrophysics Data System (ADS)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2017-03-01

Thermal aging of cross-linked polyethylene (XLPE) can cause serious concerns in the safety operation in high voltage system. To get a more detailed picture on the effect of thermal aging on the trapping and detrapping process of XLPE in the melting temperature range, Thermal Stimulated Current (TSC) have been implemented in a Scanning Electron Microscope (SEM) with a specific arrangement. The XLPE specimens are molded and aged at two temperatures (120 °C and 140 °C) situated close to the melting temperature of the material. The use of SEM allows us to measure both leakage and displacement currents induced in samples under electron irradiation. The first represents the conduction process of XLPE and the second gives information on the trapping of charges in the bulk of the material. TSC associated to the SEM leads to show spectra of XLPE discharge under thermal stimulation using both currents measured after electron irradiation. It was found that leakage current in the charging process may be related to the physical defects resulting in crystallinity variation under thermal aging. However the trapped charge can be affected by the carbonyl groups resulting from the thermo-oxidation degradation and the disorder in the material. It is evidenced from the TSC spectra of unaged XLPE that there is no detrapping charge under heat stimulation. Whereas the presence of peaks in the TSC spectra of thermally aged samples indicates that there is some amount of trapped charge released by heating. The detrapping behavior of aged XLPE is supported by the supposition of the existence of two trap levels: shallow traps and deep traps. Overall, physico-chemical reactions under thermal aging at high temperatures leads to the enhancement of shallow traps density and changes in range of traps depth. These changes induce degradation of electrical properties of XLPE.

Is routine postoperative gastrografin study needed after laparoscopic sleeve gastrectomy? Experience of 712 cases.

PubMed

Wahby, M; Salama, A F; Elezaby, A F; Belgrami, F; Abd Ellatif, M E; El-Kaffas, H F; Al-Katary, M

2013-11-01

The current standard of care is to perform a postoperative gastrografin study following laparoscopic sleeve gastrectomy (LSG) to detect leakage or obstruction. This study evaluated the usefulness of this routine procedure. A retrospective chart review was performed in December 2012. All patients had routine intraoperative methylene blue testing to check for possible leakage from the staple line, and any leaking points were oversewn. We also performed postoperative contrast study (gastrografin) routinely in the first 24-48 h for all patients. From June 2007 to December 2012, 712 cases underwent LSG during the study period. Patients included in this study were 556 women (78.1%) and 156 men (21.9%). The mean age was 35 years. The mean BMI was 48 kg/m2. The operative time was 107 ± 29 min, and there were no conversions to open surgery. Intraoperative methylene blue test detected leakage in 28 cases (3.93%). Postoperative contrast study (gastrografin) was negative for leakage in all cases. Computed tomography (CT) scan with oral contrast study detected leakage in 1.4% (ten cases); none of these cases were detected by regular contrast study. Our study showed that intraoperative methylene blue test for leakage is a very sensitive and effective method for detecting leakage during sleeve gastrectomy and should be done routinely in all cases. Routine postoperative contrast study is not needed to detect leakage unless clinically indicated in selected cases, and in such cases contrast-enhanced CT scans are the modality of choice.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

On designing of a low leakage patient-centric provider network.

PubMed

Zheng, Yuchen; Lin, Kun; White, Thomas; Pickreign, Jeremy; Yuen-Reed, Gigi

2018-03-27

When a patient in a provider network seeks services outside of their community, the community experiences a leakage. Leakage is undesirable as it typically leads to higher out-of-network cost for patient and increases barrier for care coordination, which is particularly problematic for Accountable Care Organization (ACO) as the in-network providers are financially responsible for quality of care and outcome. We aim to design a data-driven method to identify naturally occurring provider networks driven by diabetic patient choices, and understand the relationship among provider composition, patient composition, and service leakage pattern. By doing so, we learn the features of low service leakage provider networks that can be generalized to different patient population. Data used for this study include de-identified healthcare insurance administrative data acquired from Capital District Physicians' Health Plan (CDPHP) for diabetic patients who resided in four New York state counties (Albany, Rensselaer, Saratoga, and Schenectady) in 2014. We construct a healthcare provider network based on patients' historical medical insurance claims. A community detection algorithm is used to identify naturally occurring communities of collaborating providers. For each detected community, a profile is built using several new key measures to elucidate stakeholders of our findings. Finally, import-export analysis is conducted to benchmark their leakage pattern and identify further leakage reduction opportunity. The design yields six major provider communities with diverse profiles. Some communities are geographically concentrated, while others tend to draw patients with certain diabetic co-morbidities. Providers from the same healthcare institution are likely to be assigned to the same community. While most communities have high within-community utilization and spending, at 85% and 86% respectively, leakage still persists. Hence, we utilize a metric from import-export analysis to detect leakage, gaining insight on how to minimize leakage. We identify patient-driven provider organization by surfacing providers who share a large number of patients. By analyzing the import-export behavior of each identified community using a novel approach and profiling community patient and provider composition we understand the key features of having a balanced number of PCP and specialists and provider heterogeneity.

Dielectric property study of poly(4-vinylphenol)-graphene oxide nanocomposite thin film

NASA Astrophysics Data System (ADS)

Roy, Dhrubojyoti

2018-05-01

Thin film capacitor device having a sandwich structure of indium tin oxide (ITO)-coated glass/polymer or polymer nanocomposite /silver has been fabricated and their dielectric and leakage current properties has been studied. The dielectric properties of the capacitors were characterized for frequencies ranging from 1 KHz to 1 MHz. 5 wt% Poly(4-vinylphenol)(PVPh)-Graphene (GO) nanocomposite exhibited an increase in dielectric constant to 5.6 and small rise in dielectric loss to around˜0.05 at 10 KHz w.r.t polymer. The DC conductivity measurements reveal rise of leakage current in nanocomposite.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majzoobi, A.; Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Neuber, A. A.

Particle-in-cell simulations are performed to analyze the efficiency, output power and leakage currents in a 12-Cavity, 12-Cathode rising-sun magnetron with diffraction output (MDO). The central goal is to conduct a parameter study of a rising-sun magnetron that comprehensively incorporates performance enhancing features such as transparent cathodes, axial extraction, the use of endcaps, and cathode extensions. Our optimum results demonstrate peak output power of about 2.1 GW, with efficiencies of ∼70% and low leakage currents at a magnetic field of 0.45 Tesla, a 400 kV bias with a single endcap, for a range of cathode extensions between 3 and 6 centimeters.

Results of More Than 11,800 Sleeve Gastrectomies: Data Analysis of the German Bariatric Surgery Registry.

PubMed

Stroh, Christine; Köckerling, Ferdinand; Volker, Lange; Frank, Benedix; Stefanie, Wolff; Christian, Knoll; Christiane, Bruns; Thomas, Manger

2016-05-01

Laparoscopic sleeve gastrectomy (SG) is an upcoming procedure in bariatric surgery and is currently performed worldwide. Staple line leakage, as the most frequent and most feared complication, is still a major concern. Since 2005 data from patients undergoing bariatric procedures in Germany have been prospectively registered in an online database and analyzed. All patients who had undergone primary SG within a 7-year period were considered for analysis. Using the German Bariatric Surgery Registry, data from more than 11,800 SGs were collected between January 1, 2005, and December 31, 2013. Staple line leak rate decreased from 6.5% to 1.4%. Male sex, higher body mass index, concomitant sleep apnea, conversion to laparotomy, longer operation time, a combination of buttresses and oversewing, and the occurrence of intraoperative complications were associated with a significantly higher leakage rate compared with when using either buttresses or oversewing alone. On multivariable analysis, operation time and year of procedure only had a significant impact on staple line leakage rate. Owing to the growing experience a constant decrease in the leakage rate after SG has been observed. Staple line disruption may still lead to sepsis, multiorgan dysfunction, and increased mortality. The results of the current study demonstrated that there are factors that increase the risk of leakage and which would enable surgeons to define risk groups, select patients more carefully, and offer closer follow-up during the postoperative course with early recognition and adequate treatment.

Effect of aqueous electrolytes on the electrochemical behaviors of supercapacitors based on hierarchically porous carbons

NASA Astrophysics Data System (ADS)

Zhang, Xiaoyan; Wang, Xianyou; Jiang, Lanlan; Wu, Hao; Wu, Chun; Su, Jingcang

2012-10-01

Hierarchically porous carbons (HPCs) have been prepared by sol-gel self-assembly technology with nickel oxide and surfactant as the dual template. The porous carbons are further activated by nitric acid. The electrochemical behaviors of supercapacitors using HPCs as electrode material in different aqueous electrolytes, e.g., (NH4)2SO4, Na2SO4, H2SO4 and KOH are studied by cyclic voltametry, galvanostatic charge/discharge, cyclic life, leakage current, self-discharge and electrochemical impedance spectroscopy. The results demonstrate that the supercapacitors in various electrolytes perform definitely capacitive behaviors; especially in 6 M KOH electrolyte the supercapacitor represents the best electrochemical performance, the shortest relaxation time, and nearly ideal polarisability. The energy density of 8.42 Wh kg-1 and power density of 17.22 kW kg-1 are obtained at the operated voltage window of 1.0 V. Especially, the energy density of 11.54 Wh kg-1 and power density of 10.58 kW kg-1 can be achieved when the voltage is up to 1.2 V.

Experimental and analytical tools for evaluation of Stirling engine rod seal behavior

NASA Technical Reports Server (NTRS)

Krauter, A. I.; Cheng, H. S.

1979-01-01

The first year of a two year experimental and analytical program is reported. The program is directed at the elastohydrodynamic behavior of sliding elastomeric rod seals for the Stirling engine. During the year, experimental and analytical tools were developed for evaluating seal leakage, seal friction, and the fluid film thickness at the seal/cylinder interface.

Physical and numerical studies of a fracture system model

NASA Astrophysics Data System (ADS)

Piggott, Andrew R.; Elsworth, Derek

1989-03-01

Physical and numerical studies of transient flow in a model of discretely fractured rock are presented. The physical model is a thermal analogue to fractured media flow consisting of idealized disc-shaped fractures. The numerical model is used to predict the behavior of the physical model. The use of different insulating materials to encase the physical model allows the effects of differing leakage magnitudes to be examined. A procedure for determining appropriate leakage parameters is documented. These parameters are used in forward analysis to predict the thermal response of the physical model. Knowledge of the leakage parameters and of the temporal variation of boundary conditions are shown to be essential to an accurate prediction. Favorable agreement is illustrated between numerical and physical results. The physical model provides a data source for the benchmarking of alternative numerical algorithms.

Correlating antimicrobial activity and model membrane leakage induced by nylon-3 polymers and detergents

PubMed Central

Hovakeemian, Sara G.; Liu, Runhui; Gellman, Samuel H.; Heerklotz, Heiko

2015-01-01

Most antimicrobial peptides act upon target microorganisms by permeabilizing their membranes. The mode of action is often assessed by vesicle leakage experiments that use model membranes, with the assumption that biological activity arises from permeabilization of the lipid bilayer. The current work aims to extend the interpretation of vesicle leakage results and examine the correlation between vesicle leakage and antimicrobial activity. To this end, we used a lifetime-based leakage assay with calcein-loaded vesicles to study the membrane permeabilizing properties of a novel antifungal polymer poly-NM, two of its analogs, and a series of detergents. In conjunction, the biological activities of these compounds against Candida albicans were assessed and correlated with data from vesicle leakage. Poly-NM induces all-or-none leakage in polar yeast lipid vesicles at the polymer’s MIC, 3 μg/mL. At this and higher concentrations, complete leakage after an initial lag time was observed. Concerted activity tests imply that this polymer acts independently of the detergent octyl glucoside (OG) for both vesicle leakage and activity against C. albicans spheroplasts. In addition, Poly-NM was found to have negligible activity against zwitterionic vesicles and red blood cells. Our results provide a consistent, detailed picture of the mode of action of Poly-NM: this polymer induces membrane leakage by electrostatic lipid clustering. In contrast, Poly-MM:CO, a nylon-3 polymer comprised of both cationic and hydrophobic segments, seems to act by a different mechanism that involves membrane asymmetry stress. Vesicle leakage for this polymer is transient (limited to <100%) and graded, non-specific among zwitterionic and polar yeast lipid vesicles, additive with detergent action, and correlates poorly with biological activity. Based on these results, we conclude that comprehensive leakage experiments can provide a detailed description of the mode of action of membrane permeabilizing compounds. Without this thorough approach, it would have been logical to assume that the two nylon-3 polymers we examined act via similar mechanisms; it is surprising that their mechanisms are so distinct. Some, but not all mechanisms of vesicle permeabilization allow for antimicrobial activity. PMID:26234884

Correlating antimicrobial activity and model membrane leakage induced by nylon-3 polymers and detergents.

PubMed

Hovakeemian, Sara G; Liu, Runhui; Gellman, Samuel H; Heerklotz, Heiko

2015-09-14

Most antimicrobial peptides act upon target microorganisms by permeabilizing their membranes. The mode of action is often assessed by vesicle leakage experiments that use model membranes, with the assumption that biological activity correlates with the permeabilization of the lipid bilayer. The current work aims to extend the interpretation of vesicle leakage results and examine the correlation between vesicle leakage and antimicrobial activity. To this end, we used a lifetime-based leakage assay with calcein-loaded vesicles to study the membrane permeabilizing properties of a novel antifungal polymer poly-NM, two of its analogs, and a series of detergents. In conjunction, the biological activities of these compounds against Candida albicans were assessed and correlated with data from vesicle leakage. Poly-NM induces all-or-none leakage in polar yeast lipid vesicles at the polymer's MIC, 3 μg mL(-1). At this and higher concentrations, complete leakage after an initial lag time was observed. Concerted activity tests imply that this polymer acts independently of the detergent octyl glucoside (OG) for both vesicle leakage and activity against C. albicans spheroplasts. In addition, poly-NM was found to have negligible activity against zwitterionic vesicles and red blood cells. Our results provide a consistent, detailed picture of the mode of action of poly-NM: this polymer induces membrane leakage by electrostatic lipid clustering. In contrast, poly-MM:CO, a nylon-3 polymer comprised of both cationic and hydrophobic segments, seems to act by a different mechanism that involves membrane asymmetry stress. Vesicle leakage for this polymer is transient (limited to <100%) and graded, non-specific among zwitterionic and polar yeast lipid vesicles, additive with detergent action, and correlates poorly with biological activity. Based on these results, we conclude that comprehensive leakage experiments can provide a detailed description of the mode of action of membrane permeabilizing compounds. Without this thorough approach, it would have been logical to assume that the two nylon-3 polymers we examined act via similar mechanisms; it is surprising that their mechanisms are so distinct. Some, but not all mechanisms of vesicle permeabilization allow for antimicrobial activity.

A 3D CZT high resolution detector for x- and gamma-ray astronomy

NASA Astrophysics Data System (ADS)

Kuvvetli, I.; Budtz-Jørgensen, C.; Zappettini, A.; Zambelli, N.; Benassi, G.; Kalemci, E.; Caroli, E.; Stephen, J. B.; Auricchio, N.

2014-07-01

At DTU Space we have developed a high resolution three dimensional (3D) position sensitive CZT detector for high energy astronomy. The design of the 3D CZT detector is based on the CZT Drift Strip detector principle. The position determination perpendicular to the anode strips is performed using a novel interpolating technique based on the drift strip signals. The position determination in the detector depth direction, is made using the DOI technique based the detector cathode and anode signals. The position determination along the anode strips is made with the help of 10 cathode strips orthogonal to the anode strips. The position resolutions are at low energies dominated by the electronic noise and improve therefore with increased signal to noise ratio as the energy increases. The achievable position resolution at higher energies will however be dominated by the extended spatial distribution of the photon produced ionization charge. The main sources of noise contribution of the drift signals are the leakage current between the strips and the strip capacitance. For the leakage current, we used a metallization process that reduces the leakage current by means of a high resistive thin layer between the drift strip electrodes and CZT detector material. This method was applied to all the proto type detectors and was a very effective method to reduce the surface leakage current between the strips. The proto type detector was recently investigated at the European Synchrotron Radiation Facility, Grenoble which provided a fine 50 × 50 μm2 collimated X-ray beam covering an energy band up to 600 keV. The Beam positions are resolved very well with a ~ 0.2 mm position resolution (FWHM ) at 400 keV in all directions.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

P-type doping of GaN(000\\bar{1}) by magnesium ion implantation

NASA Astrophysics Data System (ADS)

Narita, Tetsuo; Kachi, Tetsu; Kataoka, Keita; Uesugi, Tsutomu

2017-01-01

Magnesium ion implantation has been performed on a GaN(000\\bar{1}) substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current-voltage characteristics of p-n diodes fabricated on GaN(000\\bar{1}) showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN(000\\bar{1}).

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

NASA Technical Reports Server (NTRS)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Estimation of steady-state leakage current in polycrystalline PZT thin films

NASA Astrophysics Data System (ADS)

Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander

2016-09-01

Estimation of the steady state (or "true") leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σ exp ) models are studied for current-time J (t) data fitting. Σ exp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.

Buried structure for increasing fabrication performance of micromaterial by electromigration

NASA Astrophysics Data System (ADS)

Kimura, Yasuhiro; Saka, Masumi

2016-06-01

The electromigration (EM) technique is a physical synthetic growth method for micro/nanomaterials. EM causes atomic diffusion in a metal line by high-density electron flows. The intentional control of accumulation and relaxation of atoms by EM can lead to the fabrication of a micro/nanomaterial. TiN passivation has been utilized as a component of sample in the EM technique. Although TiN passivation can simplify the cumbersome processes for preparing the sample, the leakage of current naturally occurs because of the conductivity of TiN as a side effect and decreases the performance of micro/nanomaterial fabrication. In the present work, we propose a buried structure, which contributes to significantly decreasing the current for fabricating an Al micromaterial by confining the current flow in the EM technique. The fabrication performance was evaluated based on the threshold current for fabricating an Al micromaterial using the buried structure and the previous structure with the leakage of current.

Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Euihan; Hwang, Gwangseok; Chung, Jaehun

2015-01-26

Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggestsmore » that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.« less

1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor.

PubMed

Lee, Ke-Jing; Chang, Yu-Chi; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her

2017-12-09

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm²/Vs, low threshold voltage of -1.1 V, and low leakage current of 10 -12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO₂-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

Measuring resistivity changes from within a first cased well to monitor fluids injected into oil bearing geological formations from a second cased well while passing electrical current between the two cased wells

DOEpatents

Vail, III, William B.

1993-01-01

A.C. current is conducted through geological formations separating two cased wells in an oil field undergoing enhanced oil recovery operations such as water flooding operations. Methods and apparatus are disclosed to measure the current leakage conducted into a geological formation from within a first cased well that is responsive to fluids injected into formation from a second cased well during the enhanced oil production activities. The current leakage and apparent resistivity measured within the first cased well are responsive to fluids injected into formation from the second cased well provided the distance of separation between the two cased wells is less than, or on the order of, a Characteristic Length appropriate for the problem.

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

NASA Astrophysics Data System (ADS)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

Measuring resistivity changes from within a first cased well to monitor fluids injected into oil bearing geological formations from a second cased well while passing electrical current between the two cased wells

DOEpatents

Vail, W.B. III.

1993-02-16

A.C. current is conducted through geological formations separating two cased wells in an oil field undergoing enhanced oil recovery operations such as water flooding operations. Methods and apparatus are disclosed to measure the current leakage conducted into a geological formation from within a first cased well that is responsive to fluids injected into formation from a second cased well during the enhanced oil production activities. The current leakage and apparent resistivity measured within the first cased well are responsive to fluids injected into formation from the second cased well provided the distance of separation between the two cased wells is less than, or on the order of, a Characteristic Length appropriate for the problem.

Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

NASA Astrophysics Data System (ADS)

Kim, Heesang; Oh, Byoungchan; Kim, Kyungdo; Cha, Seon-Yong; Jeong, Jae-Goan; Hong, Sung-Joo; Lee, Jong-Ho; Park, Byung-Gook; Shin, Hyungcheol

2010-09-01

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Self-compensating design for reduction of timing and leakage sensitivity to systematic pattern dependent variation

NASA Astrophysics Data System (ADS)

Gupta, Puneet; Kahng, Andrew B.; Kim, Youngmin; Sylvester, Dennis

2006-03-01

Focus is one of the major sources of linewidth variation. CD variation caused by defocus is largely systematic after the layout is finished. In particular, dense lines "smile" through focus while isolated lines "frown" in typical Bossung plots. This well-defined systematic behavior of focus-dependent CD variation allows us to develop a self-compensating design methodology. In this work, we propose a novel design methodology that allows explicit compensation of focus-dependent CD variation, either within a cell (self-compensated cells) or across cells in a critical path (self-compensated design). By creating iso and dense variants for each library cell, we can achieve designs that are more robust to focus variation. Optimization with a mixture of iso and dense cell variants is possible both for area and leakage power, with the latter providing an interesting complement to existing leakage reduction techniques such as dual-Vth. We implement both heuristic and Mixed-Integer Linear Programming (MILP) solution methods to address this optimization, and experimentally compare their results. Our results indicate that designing with a self-compensated cell library incurs ~12% area penalty and ~6% leakage increase over original layouts while compensating for focus-dependent CD variation (i.e., the design meets timing constraints across a large range of focus variation). We observe ~27% area penalty and ~7% leakage increase at the worst-case defocus condition using only single-pitch cells. The area penalty of circuits after using either the heuristic or MILP optimization approach is reduced to ~3% while maintaining timing. We also apply our optimizations to leakage, which traditionally shows very large variability due to its exponential relationship with gate CD. We conclude that a mixed iso/dense library combined with a sensitivity-based optimization approach yields much better area/timing/leakage tradeoffs than using a self-compensated cell library alone. Self-compensated design shows an average of 25% leakage reduction at the worst defocus condition for the benchmark designs that we have studied.

Relating Agulhas Leakage to the Agulhas Current Retroflection Location

DTIC Science & Technology

2009-11-03

branch return flow of the Atlantic meridional overturning circulation (Gordon, 1986; Weijer et al., 1999; Peeters et al., 2004; Biastoch et al., 2008a...demonstrated that the mesoscale dynamics reflected in the decadal variability of the Atlantic meridional overturning circulation (Biastoch et al...Lutjeharms, J. R. E.: Agulhas leakage dynamics affects decadal variability in Atlantic overturn - ing circulation , Nature, 456, 489–492, 2008a. Biastoch, A

Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

NASA Astrophysics Data System (ADS)

Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2011-06-01

For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

Aerodynamic tip desensitization in axial flow turbines

NASA Astrophysics Data System (ADS)

Dey, Debashis

The leakage flow near the tip of unshrouded rotor blades in axial turbines imposes significant thermal loads on the blade. It is also responsible for up to a third of aerodynamic losses in a turbine stage. The leakage flow, mainly induced by the pressure differential across the rotor tip section, usually rolls into a stream-wise vertical structure near the suction side part of the blade tip. The current study uses several concepts to reduce the severity of losses introduced by the leakage vortex. Three tip desensitization techniques, both active and passive, are examined. Coolant flow from a tip trench is used to counter the momentum of the leakage jet. Next, a very short winglet obtained by slightly extending the tip platform in the tangential direction is investigated. Lastly, the widely used concept of squealer tip is studied. The current investigation is performed in the Axial Flow Turbine Research Facility (AFTRF) of the Pennsylvania State University. Rotating frame five hole probe measurements as well as stationary frame phase averaged total pressure measurements downstream of a single stage turbine facility were taken. The study enables one to draw conclusions about the nature of the flowfield in the rotor tip region. It also shows that significant efficiency gains could be obtained by using some of these techniques.

Fabrication and characterization of tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel pHEMTs having extremely low gate leakage for low-noise applications

NASA Astrophysics Data System (ADS)

Packeer, F.; Mohamad Isa, M.; Mat Jubadi, W.; Ian, K. W.; Missous, M.

2013-07-01

This study focuses on the area of the epitaxial design, fabrication and characterization of a 1 µm gate-length InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs-InAlAs material systems. The advanced epitaxial layer design incorporates a highly strained aluminum-rich Schottky contact barrier, an indium-rich channel and a double delta-doped structure, which significantly improves upon the conventional low-noise pHEMT which suffers from high gate current leakage and low breakdown voltage. The outstanding achievements of the new design approach are 99% less gate current leakage and a 73% increase in breakdown voltage, compared with the conventional design. Furthermore, no degradation in RF performance is observed in terms of the cut-off frequency in this new highly tensile strained design. The remarkable performance of this advanced pHEMT design facilitates the implementation of outstanding low-noise devices.

Transferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors

NASA Astrophysics Data System (ADS)

Chae, Sang Hoon; Yu, Woo Jong; Bae, Jung Jun; Duong, Dinh Loc; Perello, David; Jeong, Hye Yun; Ta, Quang Huy; Ly, Thuc Hue; Vu, Quoc An; Yun, Minhee; Duan, Xiangfeng; Lee, Young Hee

2013-05-01

Despite recent progress in producing transparent and bendable thin-film transistors using graphene and carbon nanotubes, the development of stretchable devices remains limited either by fragile inorganic oxides or polymer dielectrics with high leakage current. Here we report the fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer. The wrinkled Al2O3 layer contained effective built-in air gaps with a small gate leakage current of 10-13 A. The resulting devices exhibited an excellent on/off ratio of ~105, a high mobility of ~40 cm2 V-1 s-1 and a low operating voltage of less than 1 V. Importantly, because of the wrinkled dielectric layer, the transistors retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation. No significant performance loss was observed after stretching and releasing the devices for over 1,000 times. The sustainability and performance advances demonstrated here are promising for the adoption of stretchable electronics in a wide variety of future applications.

Electrical safety Q&A. A reference guide for the clinical engineer.

PubMed

2005-02-01

This guide, which ECRI developed to answer the electrical safety questions most frequently asked by member hospitals, features practical advice for addressing electrical safety concerns in the healthcare environment. Questions addressed include: STANDARDS AND APPROVALS: What electrical safety standards apply? How do NFPA 99 and IEC 60601-1 differ? What organizations approve medical devices? LEAKAGE CURRENT LIMITS AND TESTING: How are leakage current limits established? What limits apply to equipment used in the hospital? And how should the limits be applied in special cases, such as the use of PCs in the patient care area or equipment used in the clinical laboratory? ISOLATED POWER: What are its advantages and disadvantages, and is isolated power needed in the operating room? Other topics addressed include double insulation, ground-fault circuit interrupters (GFCIs), and requirements for medical devices used in the home. Supplementary articles discuss acceptable alternatives to UL listing, the use of Hospital Grade plugs, the limitations of leakage current testing of devices connected to isolated power systems, and the debate about whether to designate ORs as wet locations. Experienced clinical engineers should find this guide to be a handy reference, while those new to the field should find it to be a helpful educational resource.

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

NASA Astrophysics Data System (ADS)

Wu, Chi-Chang; Hsiao, Yu-Ping; You, Hsin-Chiang; Lin, Guan-Wei; Kao, Min-Fang; Manga, Yankuba B.; Yang, Wen-Luh

2018-02-01

We have developed an organic-based resistive random access memory (ReRAM) by using spin-coated polyimide (PI) as the resistive layer. In this study, the chain distance and number of chain stacks of PI molecules are investigated. We employed different solid contents of polyamic acid (PAA) to synthesize various PI films, which served as the resistive layer of ReRAM, the electrical performance of which was evaluated. By tuning the PAA solid content, the intermolecular interaction energy of the PI films is changed without altering the molecular structure. Our results show that the leakage current in the high-resistance state and the memory window of the PI-based ReRAM can be substantially improved using this technique. The superior properties of the PI-based ReRAM are ascribed to fewer molecular chain stacks in the PI films when the PAA solid content is decreased, hence suppressing the leakage current. In addition, a device retention time of more than 107 s can be achieved using this technique. Finally, the conduction mechanism in the PI-based ReRAM was analyzed using hopping and conduction models.

Threshold-voltage modulated phase change heterojunction for application of high density memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Baihan; Tong, Hao, E-mail: tonghao@hust.edu.cn; Qian, Hang

2015-09-28

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-raymore » photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.« less

Surface Conduction in III-V Semiconductor Infrared Detector Materials

NASA Astrophysics Data System (ADS)

Sidor, Daniel Evan

III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are ineffectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture offers a potential solution. III-V bulk unipolar barrier detectors that effectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated.

Geochemical monitoring for detection of CO_{2} leakage from subsea storage sites

NASA Astrophysics Data System (ADS)

García-Ibáñez, Maribel I.; Omar, Abdirahman M.; Johannessen, Truls

2017-04-01

Carbon Capture and Storage (CCS) in subsea geological formations is a promising large-scale technology for mitigating the increases of carbon dioxide (CO2) in the atmosphere. However, detection and quantification of potential leakage of the stored CO2 remains as one of the main challenges of this technology. Geochemical monitoring of the water column is specially demanding because the leakage CO2 once in the seawater may be rapidly dispersed by dissolution, dilution and currents. In situ sensors capture CO2 leakage signal if they are deployed very close to the leakage point. For regions with vigorous mixing and/or deep water column, and for areas far away from the leakage point, a highly sensitive carbon tracer (Cseep tracer) was developed based on the back-calculation techniques used to estimate anthropogenic CO2 in the water column. Originally, the Cseep tracer was computed using accurate discrete measurements of total dissolved inorganic carbon (DIC) and total alkalinity (AT) in the Norwegian Sea to isolate the effect of natural submarine vents in the water column. In this work we assess the effect of measurement variables on the performance of the method by computing the Cseep tracer twice: first using DIC and AT, and second using partial pressure of CO2 (pCO2) and pH. The assessment was performed through the calculation of the signal to noise ratios (STNR). We found that the use of the Cseep tracer increases the STNR ten times compared to the raw measurement data, regardless of the variables used. Thus, while traditionally the pH-pCO2 pair generates the greatest uncertainties in the oceanic CO2 system, it seems that the Cseep technique is insensitive to that issue. On the contrary, the use of the pCO2-pH pair has the highest CO2 leakage detection and localization potential due to the fact that both pCO2 and pH can currently be measured at high frequency and in an autonomous mode.

Durable Airtightness in Single-Family Dwellings - Field Measurementsand Analysis

DOE PAGES

Chan, Wanyu R.; Walker, Iain S.; Sherman, Max H.

2015-06-01

Here, durability of the building envelope is important to new homes that are increasingly built with improved levels of airtightness. It is also important to weatherized homes such that energy savings from retrofit measures, such as air sealing, are persistent. This paper presents a comparison of air leakage measurements collected in November 2013 through March 2014, with two sets of prior data collected between 2001-2003 from 17 new homes located near Atlanta, GA, and 17 homes near Boise, ID that were weatherized in 2007- 2008. The purpose of the comparison is to determine if there are changes to the airtightnessmore » of building envelopes over time. The air leakage increased in all but one of the new homes, with a mean increase of about 25%. The weatherized homes also showed an increase in the mean air leakage (12%). A regression analysis was performed to describe the relationship between prior and current measurements in terms of normalized leakage (NL). The best estimate of the ageing factor predicts a 15% increase in NL over ten years. Further analysis using ResDB data (LBNL’s Residential Diagnostic Database) showed the expected changes in air leakage if ageing were modelled. These results imply the need to examine the causes of increased leakage and methods to avoid them. This increase in leakage with time should be accounted for in long-term population-wide energy savings estimates, such as those used in ratings or energy savings programs.« less

Wide bandwidth transimpedance amplifier for extremely high sensitivity continuous measurements.

PubMed

Ferrari, Giorgio; Sampietro, Marco

2007-09-01

This article presents a wide bandwidth transimpedance amplifier based on the series of an integrator and a differentiator stage, having an additional feedback loop to discharge the standing current from the device under test (DUT) to ensure an unlimited measuring time opportunity when compared to switched discharge configurations while maintaining a large signal amplification over the full bandwidth. The amplifier shows a flat response from 0.6 Hz to 1.4 MHz, the capability to operate with leakage currents from the DUT as high as tens of nanoamperes, and rail-to-rail dynamic range for sinusoidal current signals independent of the DUT leakage current. Also available is a monitor output of the stationary current to track experimental slow drifts. The circuit is ideal for noise spectral and impedance measurements of nanodevices and biomolecules when in the presence of a physiological medium and in all cases where high sensitivity current measurements are requested such as in scanning probe microscopy systems.

The effectiveness of four-cavity treatment systems in sealing amalgam restorations.

PubMed

Morrow, Leean A; Wilson, Nairn H F

2002-01-01

Amalgam does not bond to tooth tissue; therefore, restorations using such material are prone to leakage despite the deposition of corrosion products. This study evaluated the effectiveness of four cavity treatment systems placed in vivo in sealing restorations of amalgam. Four cavity treatment systems were investigated in this study: Cervitec, Gluma One Bond, Panavia 21 and Copaliner Dentin Varnish and Sealant. No cavity treatment was placed in an additional group to serve as a control. The teeth were extracted within 15 minutes of restoration placement. The specimens were thermocycled (5-55 +/- 2 degrees C, 500 cycles), immersed in a dye solution, sectioned and scored for leakage. Scanning electron microscopy also examined features of the tooth/restoration interfaces. There were statistically significant differences among the groups regarding leakage scores (p = 0.00). None of the materials tested consistently prevented leakage; however, use of Copaliner Dentin Varnish and Sealant resulted in less overall, occlusal and cervical microleakage than any other systems tested. Significantly more leakage was observed in relation to the cervical portions of the cavities (p = 0.00). No significant differences were identified between the leakage scores obtained for the buccal and palatal (lingual) cavities and the different tooth types (p = 0.52 and 0.83, respectively). A level of significance of 0.05 was selected in all cases. The benefits of the materials tested in this study need to be evaluated using robust, long-term clinical studies. Further work should continue to develop laboratory tests that predict the behavior and performance of cavity sealants in clinical service.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswavemore » output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).« less

Fabrication of self-aligned, nanoscale, complex oxide varactors

NASA Astrophysics Data System (ADS)

Fu, Richard X.; Toonen, Ryan C.; Hirsch, Samuel G.; Ivill, Mathew P.; Cole, Melanie W.; Strawhecker, Kenneth E.

2015-01-01

Applications in ferroelectric random access memory and superparaelectric devices require the fabrication of ferroelectric capacitors at the nanoscale that exhibit extremely small leakage currents. To systematically study the material-size dependence of ferroelectric varactor performance, arrays of parallel-plate structures have been fabricated with nanoscale dielectric diameters. Electron beam lithography and inductively coupled plasma dry etching have been used to fabricate arrays of ferroelectric varactors using top electrodes as a self-aligned etch mask. Parallel-plate test structures using RF-sputtered Ba0.6Sr0.4TiO3 thin-films were used to optimize the fabrication process. Varactors with diameters down to 20 nm were successfully fabricated. Current-voltage (I-V) characteristics were measured to evaluate the significance of etch-damage and fabrication quality by ensuring low leakage currents through the structures.

Determination of leakage areas in nuclear piping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Keim, E.

1997-04-01

For the design and operation of nuclear power plants the Leak-Before-Break (LBB) behavior of a piping component has to be shown. This means that the length of a crack resulting in a leak is smaller than the critical crack length and that the leak is safely detectable by a suitable monitoring system. The LBB-concept of Siemens/KWU is based on computer codes for the evaluation of critical crack lengths, crack openings, leakage areas and leakage rates, developed by Siemens/KWU. In the experience with the leak rate program is described while this paper deals with the computation of crack openings and leakagemore » areas of longitudinal and circumferential cracks by means of fracture mechanics. The leakage areas are determined by the integration of the crack openings along the crack front, considering plasticity and geometrical effects. They are evaluated with respect to minimum values for the design of leak detection systems, and maximum values for controlling jet and reaction forces. By means of fracture mechanics LBB for subcritical cracks has to be shown and the calculation of leakage areas is the basis for quantitatively determining the discharge rate of leaking subcritical through-wall cracks. The analytical approach and its validation will be presented for two examples of complex structures. The first one is a pipe branch containing a circumferential crack and the second one is a pipe bend with a longitudinal crack.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Bao; Liu, Wen-Jun; Wei, Lei

Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2}more » stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.« less

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

Development of environmental impact monitoring protocol for offshore carbon capture and storage (CCS): A biological perspective

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hyewon, E-mail: hyewon@ldeo.columbia.edu; Kim, Yong Hoon, E-mail: Yong.Kim@rpsgroup.com; Kang, Seong-Gil, E-mail: kangsg@kriso.re.kr

Offshore geologic storage of carbon dioxide (CO{sub 2}), known as offshore carbon capture and sequestration (CCS), has been under active investigation as a safe, effective mitigation option for reducing CO{sub 2} levels from anthropogenic fossil fuel burning and climate change. Along with increasing trends in implementation plans and related logistics on offshore CCS, thorough risk assessment (i.e. environmental impact monitoring) needs to be conducted to evaluate potential risks, such as CO{sub 2} gas leakage at injection sites. Gas leaks from offshore CCS may affect the physiology of marine organisms and disrupt certain ecosystem functions, thereby posing an environmental risk. Here,more » we synthesize current knowledge on environmental impact monitoring of offshore CCS with an emphasis on biological aspects and provide suggestions for better practice. Based on our critical review of preexisting literatures, this paper: 1) discusses key variables sensitive to or indicative of gas leakage by summarizing physico-chemical and ecological variables measured from previous monitoring cruises on offshore CCS; 2) lists ecosystem and organism responses to a similar environmental condition to CO{sub 2} leakage and associated impacts, such as ocean acidification and hypercapnia, to predict how they serve as responsive indicators of short- and long-term gas exposure, and 3) discusses the designs of the artificial gas release experiments in fields and the best model simulation to produce realistic leakage scenarios in marine ecosystems. Based on our analysis, we suggest that proper incorporation of biological aspects will provide successful and robust long-term monitoring strategies with earlier detection of gas leakage, thus reducing the risks associated with offshore CCS. - Highlights: • This paper synthesizes the current knowledge on environmental impact monitoring of offshore Carbon Capture and Sequestration (CCS). • Impacts of CO{sub 2} leakage (ocean acidification, hypercapnia) on marine organisms and ecosystems are discussed. • Insights and recommendations on EIA monitoring for CCS operations are proposed specifically in marine ecosystem perspective.« less

Principles of a multistack electrochemical wastewater treatment design

NASA Astrophysics Data System (ADS)

Elsahwi, Essam S.; Dawson, Francis P.; Ruda, Harry E.

2018-02-01

Electrolyzer stacks in a bipolar architecture (cells connected in series) are desirable since power provided to a stack can be transferred at high voltages and low currents and thus the losses in the power bus can be reduced. The anode electrodes (active electrodes) considered as part of this study are single sided but there are manufacturing cost advantages to implementing double side anodes in the future. One of the main concerns with a bipolar stack implementation is the existence of leakage currents (bypass currents). The leakage current is associated with current paths that are not between adjacent anode and cathode pairs. This leads to non uniform current density distributions which compromise the electrochemical conversion efficiency of the stack and can also lead to unwanted side reactions. The objective of this paper is to develop modelling tools for a bipolar architecture consisting of two single sided cells that use single sided anodes. It is assumed that chemical reactions are single electron transfer rate limited and that diffusion and convection effects can be ignored. The design process consists of the flowing two steps: development of a large signal model for the stack, and then the extraction of a small signal model from the large signal model. The small signal model facilitates the design of a controller that satisfies current or voltage regulation requirements. A model has been developed for a single cell and two cells in series but can be generalized to more than two cells in series and to incorporate double sided anode configurations in the future. The developed model is able to determine the leakage current and thus provide a quantitative assessment on the performance of the cell.

Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit

NASA Astrophysics Data System (ADS)

Park, Hyeonwoo; Teramoto, Akinobu; Kuroda, Rihito; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Localized stress-induced leakage current (SILC) has become a major problem in the reliability of flash memories. To reduce it, clarifying the SILC mechanism is important, and statistical measurement and analysis have to be carried out. In this study, we applied an array test circuit that can measure the SILC distribution of more than 80,000 nMOSFETs with various gate areas at a high speed (within 80 s) and a high accuracy (on the 10-17 A current order). The results clarified that the distributions of localized SILC in different gate areas follow a universal distribution assuming the same SILC defect density distribution per unit area, and the current of localized SILC defects does not scale down with the gate area. Moreover, the distribution of SILC defect density and its dependence on the oxide field for measurement (E OX-Measure) were experimentally determined for fabricated devices.

Detecting subsurface fluid leaks in real-time using injection and production rates

NASA Astrophysics Data System (ADS)

Singh, Harpreet; Huerta, Nicolas J.

2017-12-01

CO2 injection into geologic formations for either enhanced oil recovery or carbon storage introduces a risk for undesired fluid leakage into overlying groundwater or to the surface. Despite decades of subsurface CO2 production and injection, the technologies and methods for detecting CO2 leaks are still costly and prone to large uncertainties. This is especially true for pressure-based monitoring methods, which require the use of simplified geological and reservoir flow models to simulate the pressure behavior as well as background noise affecting pressure measurements. In this study, we propose a method to detect the time and volume of fluid leakage based on real-time measurements of well injection and production rates. The approach utilizes analogies between fluid flow and capacitance-resistance modeling. Unlike other leak detection methods (e.g. pressure-based), the proposed method does not require geological and reservoir flow models to simulate the behavior that often carry significant sources of uncertainty; therefore, with our approach the leak can be detected with greater certainty. The method can be applied to detect when a leak begins by tracking a departure in fluid production rate from the expected pattern. The method has been tuned to detect the effect of boundary conditions and fluid compressibility on leakage. To highlight the utility of this approach we use our method to detect leaks for two scenarios. The first scenario simulates a fluid leak from the storage formation into an above-zone monitoring interval. The second scenario simulates intra-reservoir migration between two compartments. We illustrate this method to detect fluid leakage in three different reservoirs with varying levels of geological and structural complexity. The proposed leakage detection method has three novelties: i) requires only readily-available data (injection and production rates), ii) accounts for fluid compressibility and boundary effects, and iii) in addition to detecting the time when a leak is activated and the volume of that leakage, this method provides an insight about the leak location, and reservoir connectivity. We are proposing this as a complementary method that can be used with other, more expensive, methods early on in the injection process. This will allow an operator to conduct more expensive surveys less often because the proposed method can show if there are no leaks on a monthly basis that is cheap and fast.

Detection of urinary leakage after radical retropubic prostatectomy by contrast enhanced ultrasound - do we still need conventional retrograde cystography?

PubMed

Schoeppler, Gita M; Buchner, Alexander; Zaak, Dirk; Khoder, Wael; Staehler, Michael; Stief, Christian G; Reiser, Maximilian F; Clevert, Dirk-Andre

2010-12-01

To prospectively evaluate the accuracy of transvesical contrast-enhanced ultrasound (CEUS) as an alternative method for the detection of anastomotic leakage after radical retropubic prostatectomy (RRP) in comparison with the current standard method of conventional retrograde cystography (CG). Forty-three patients underwent RRP for histologically proven localized prostate cancer. The vesico-urethral anastomosis was evaluated 8 days after RRP by CG and CEUS. Any peri-anastomotic leakage was assessed and determined in CG and CEUS as follows: no extravasation (EV), small leakage (≤0.5 cm), moderate leakage (>0.5 cm to ≤2 cm), large leakage (>2 cm diameter of EV seen). In total, 21 (49%) patients showed a watertight anastomosis. Ten (23%), two (4.7%) and ten (23%) patients showed a small, intermediate and large EV, respectively. In 31 cases (72%) there was 100% agreement of CG and CEUS for detection of no, moderate and large EV, respectively. In nine cases a small and in two cases a moderate EV was categorized as watertight anastomosis by CEUS. Only in one case did CG detect a small EV where a large EV was detected in CEUS. The agreement between both methods was 95% for detecting absence or large leakages. CEUS is a promising imaging modality that seems to be equivalent to CG for detecting the presence of a large anastomotic leakage that is clinically relevant for postoperative persistence of the indwelling catheter. CEUS could be a cheap and time-saving alternative to the CG without exposure of the patient to radiation. © 2010 THE AUTHORS. JOURNAL COMPILATION © 2010 BJU INTERNATIONAL.

Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Suzuki, Yuki; Ohta, Hiromichi

2017-10-01

The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (σ) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO.7Al2O3 film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (Vg) up to 20 V for a very long current-flowing-time (t) ˜40 min, primarily due to the low σ [2.0 × 10-8 S cm-1 at room temperature (RT)] of leakage-free water. We then controlled the σ of the leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with a nanopillar array structure, from 8.0 × 10-8 S cm-1 to 2.5 × 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = -3 V, becomes two orders of magnitude shorter with increase of the σ of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high σ of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device.

Numerical Modeling of Methane Leakage from a Faulty Natural Gas Well into Fractured Tight Formations.

PubMed

Moortgat, Joachim; Schwartz, Franklin W; Darrah, Thomas H

2018-03-01

Horizontal drilling and hydraulic fracturing have enabled hydrocarbon recovery from unconventional reservoirs, but led to natural gas contamination of shallow groundwaters. We describe and apply numerical models of gas-phase migration associated with leaking natural gas wells. Three leakage scenarios are simulated: (1) high-pressure natural gas pulse released into a fractured aquifer; (2) continuous slow leakage into a tilted fractured formation; and (3) continuous slow leakage into an unfractured aquifer with fluvial channels, to facilitate a generalized evaluation of natural gas transport from faulty natural gas wells. High-pressure pulses of gas leakage into sparsely fractured media are needed to produce the extensive and rapid lateral spreading of free gas previously observed in field studies. Transport in fractures explains how methane can travel vastly different distances and directions laterally away from a leaking well, which leads to variable levels of methane contamination in nearby groundwater wells. Lower rates of methane leakage (≤1 Mcf/day) produce shorter length scales of gas transport than determined by the high-pressure scenario or field studies, unless aquifers have low vertical permeabilities (≤1 millidarcy) and fractures and bedding planes have sufficient tilt (∼10°) to allow a lateral buoyancy component. Similarly, in fractured rock aquifers or where permeability is controlled by channelized fluvial deposits, lateral flow is not sufficiently developed to explain fast-developing gas contamination (0-3 months) or large length scales (∼1 km) documented in field studies. Thus, current efforts to evaluate the frequency, mechanism, and impacts of natural gas leakage from faulty natural gas wells likely underestimate contributions from small-volume, low-pressure leakage events. © 2018, National Ground Water Association.

Groundwater-Quality Impacts from Natural-Gas Wellbore Leakage: Numerical Sensitivity Analysis of Hydrogeologic, Geostatistical, and Source-Term Parameterization at Varying Depths

NASA Astrophysics Data System (ADS)

Rice, A. K.; McCray, J. E.; Singha, K.

2016-12-01

The development of directional drilling and stimulation of reservoirs by hydraulic fracturing has transformed the energy landscape in the U.S. by making recovery of hydrocarbons from shale formations not only possible but economically viable. Activities associated with hydraulic fracturing present a set of water-quality challenges, including the potential for impaired groundwater quality. In this project, we use a three-dimensional, multiphase, multicomponent numerical model to investigate hydrogeologic conditions that could lead to groundwater contamination from natural gas wellbore leakage. This work explores the fate of methane that enters a well annulus, possibly from an intermediate formation or from the production zone via a flawed cement seal, and leaves the annulus at one of two depths: at the elevation of groundwater or below a freshwater aquifer. The latter leakage scenario is largely ignored in the current scientific literature, where focus has been on leakage directly into freshwater aquifers, despite modern regulations requiring steel casings and cement sheaths at these depths. We perform a three-stage sensitivity analysis, examining (1) hydrogeologic parameters of media surrounding a methane leakage source zone, (2) geostatistical variations in intrinsic permeability, and (3) methane source zone pressurization. Results indicate that in all cases methane reaches groundwater within the first year of leakage. To our knowledge, this is the first study to consider natural gas wellbore leakage in the context of multiphase flow through heterogeneous permeable media; advantages of multiphase modeling include more realistic analysis of methane vapor-phase relative permeability as compared to single-phase models. These results can be used to inform assessment of aquifer vulnerability to hydrocarbon wellbore leakage at varying depths.

The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2017-11-01

The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in previous models, the topology of LED die and contacts are shown to significantly affect current spreading and light output characteristics in top emitting devices. We propose an approach for calculating the current transfer length describing current spreading. We show that an inter-digitated electrode configuration with distance between the contact pad and the edge of p-n junction equal to transfer length in the current spreading ITO layer allows one to increase the optical area of LED chip, as compared to the physical area of the die, light output power, and therefore, the LED efficiency for a given current density. A detailed study of unpassivated LEDs also shows that current transfer lengths longer than the distance between the contact pad and the edge of p-n junction leads to increasing surface leakage that can only be remedied with proper passivation.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

NASA Astrophysics Data System (ADS)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

2016-03-01

Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

[Bile leakage after liver resection: A retrospective cohort study].

PubMed

Menclová, K; Bělina, F; Pudil, J; Langer, D; Ryska, M

2015-12-01

Many previous reports have focused on bile leakage after liver resection. Despite the improvements in surgical techniques and perioperative care the incidence of this complication rather keeps increasing. A number of predictive factors have been analyzed. There is still no consensus regarding their influence on the formation of bile leakage. The objective of our analysis was to evaluate the incidence of bile leakage, its impact on mortality and duration of hospitalization at our department. At the same time, we conducted an analysis of known predictive factors. The authors present a retrospective review of the set of 146 patients who underwent liver resection at the Department of Surgery of the 2nd Faculty of Medicine of the Charles University and Central Military Hospital Prague, performed between 20102013. We used the current ISGLS (International Study Group of Liver Surgery) classification to evaluate the bile leakage. The severity of this complication was determined according to the Clavien-Dindo classification system. Statistical significance of the predictive factors was determined using Fishers exact test and Students t-test. The incidence of bile leakage was 21%. According to ISGLS classification the A, B, and C rates were 6.5%, 61.2%, and 32.3%, respectively. The severity of bile leakage according to the Clavien-Dindo classification system - I-II, IIIa, IIIb, IV and V rates were 19.3%, 42%, 9.7%, 9.7%, and 19.3%, respectively. We determined the following predictive factors as statistically significant: surgery for malignancy (p<0.001), major hepatic resection (p=0.001), operative time (p<0.001), high intraoperative blood loss (p=0.02), construction of HJA (p=0.005), portal venous embolization/two-stage surgery (p=0.009) and ASA score (p=0.02). Bile leakage significantly prolonged hospitalization time (p<0.001). In the group of patients with bile leakage the perioperative mortality was 23 times higher (p<0.001) than in the group with no leakage. Bile leakage is one of the most serious complications of liver surgery. Most of the risk factors are not easily controllable and there is no clear consensus on their influence. Intraoperative leak tests could probably reduce the incidence of bile leakage. In the future, further studies will be required to improve the perioperative management and techniques to prevent such serious complications. Multidisciplinary approach is essential in the treatment.

Multilayer Piezoelectric Stack Actuator Characterization

NASA Technical Reports Server (NTRS)

Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

2008-01-01

Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

PubMed Central

Lee, Ke-Jing; Chang, Yu-Chi; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her

2017-01-01

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications. PMID:29232828

Ecosystem Modelling for Impact Assessment of Possible Methane Leakage during Methane Hydrate Utilization

NASA Astrophysics Data System (ADS)

Yamazaki, T.; Nakano, Y.; Monoe, D.; Oomi, T.; Doi, T.; Nakata, K.; Fukushima, T.

2005-05-01

Natural methane hydrate has been scientifically studied as a carbon reservoir globally. However, in Japan, the potential for energy resource has been industrially highlighted. There is less domestic oil and natural gas resources in Japan, but many potential deposition areas for methane hydrate in ocean around Japan are the reasons. Less CO2 discharge from methane compared with coal, oil and conventional natural gas when the same calorie value we get is considered as the advantage for energy resource. However, because methane hydrate distributes in shallower sediment layer in ocean floor, accidental leakage of methane may occur while we utilize methane hydrate. Methane itself has 21-times impact on the greenhouse effect, if it reaches the atmosphere. Therefore, it is necessary to estimate the behavior in the environment after the leakage, if we want to use methane hydrate as energy resource. The mass balance after leakage of methane on seafloor and in water column is numerically studied through the analyses of methane emissions from natural cold seepages and hydrothermal activities in this research. The outline structure of mass balance ecosystem model creating is introduced and some preliminary examination results from the test calculation are discussed.

Current leakage for low altitude satellites - Modeling applications. [simulation of high voltage solar cell array in ionospheric plasma environment

NASA Technical Reports Server (NTRS)

Konradi, A.; Mccoy, J. E.; Garriott, O. K.

1979-01-01

To simulate the behavior of a high voltage solar cell array in the ionospheric plasma environment, the large (90 ft x 55 ft diameter) vacuum chamber was used to measure the high-voltage plasma interactions of a 3 ft x 30 ft conductive panel. The chamber was filled with Nitrogen and Argon plasma at electron densities of up to 1,000,000 per cu cm. Measurements of current flow to the plasma were made in three configurations: (a) with one end of the panel grounded, (b) with the whole panel floating while a high bias was applied between the ends of the panel, and (c) with the whole panel at high negative voltage with respect to the chamber walls. The results indicate that a simple model with a constant panel conductivity and plasma resistance can adequately describe the voltage distribution along the panel and the plasma current flow. As expected, when a high potential difference is applied to the panel ends more than 95% of the panel floats negative with respect to the plasma.

n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guziewicz, M., E-mail: margu@ite.waw.pl; Jung, W.; Schifano, R.

Epitaxial n-type ZnO film has been grown, on a commercial 5 μm thick p-type 4H-SiC(00.1) Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 diffraction peak rocking curve of 0.34°{sup  }± 0.02° has been measured. Diodes formed on the n-ZnO/p-4H-SiC heterostructure show rectifying behavior with a forward to reverse current ratio at the level of 10{sup 9} at ±4 V, a leakage current density of ∼6 × 10{sup −8} A/cm{sup 2}, and a low ideality factor equal to 1.17 ± 0.04. In addition, the diodes exhibit selective photoresponse with a maximum at 367 nm, and with a current increasemore » of ∼10{sup 3} under illuminations with respect to the dark value, which makes such devices prospective candidates for ultraviolet light sensors.« less

Visual Inspection of Water Leakage from Ground Penetrating Radar Radargram

NASA Astrophysics Data System (ADS)

Halimshah, N. N.; Yusup, A.; Mat Amin, Z.; Ghazalli, M. D.

2015-10-01

Water loss in town and suburban is currently a significant issue which reflect the performance of water supply management in Malaysia. Consequently, water supply distribution system has to be maintained in order to prevent shortage of water supply in an area. Various techniques for detecting a mains water leaks are available but mostly are time-consuming, disruptive and expensive. In this paper, the potential of Ground Penetrating Radar (GPR) as a non-destructive method to correctly and efficiently detect mains water leaks has been examined. Several experiments were designed and conducted to prove that GPR can be used as tool for water leakage detection. These include instrument validation test and soil compaction test to clarify the maximum dry density (MDD) of soil and simulation studies on water leakage at a test bed consisting of PVC pipe burying in sand to a depth of 40 cm. Data from GPR detection are processed using the Reflex 2D software. Identification of water leakage was visually inspected from the anomalies in the radargram based on GPR reflection coefficients. The results have ascertained the capability and effectiveness of the GPR in detecting water leakage which could help avoiding difficulties with other leak detection methods.

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

NASA Astrophysics Data System (ADS)

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-04-01

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10-9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

PubMed

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and completely overwhelmed the diode current at a measurement temperature of 200 °C. This is due to interlayer diffusion of metal that increases the shunt leakage current and decreases the efficiency of the CZTSe thin film solar cells.

TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density.

PubMed

Cheng, Chun-Hu; Hsu, Hsiao-Hsuan; Chou, Kun-i

2015-04-01

We report a low-temperature InP p-MOS with a high capacitance density of 2.7 µF/cm2, low leakage current of 0.77 A/cm2 at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-κ TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to < 1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.

Preliminary skyshine calculations for the Poloidal Diverter Tokamak Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nigg, D.W.; Wheeler, F.J.

1981-01-01

The Poloidal Diverter Experiment (PDX) facility at Princeton University is the first operating tokamak to require substantial radiation shielding. A calculational model has been developed to estimate the radiation dose in the PDX control room and at the site boundary due to the skyshine effect. An efficient one-dimensional method is used to compute the neutron and capture gamma leakage currents at the top surface of the PDX roof shield. This method employs an S /SUB n/ calculation in slab geometry and, for the PDX, is superior to spherical models found in the literature. If certain conditions are met, the slabmore » model provides the exact probability of leakage out the top surface of the roof for fusion source neutrons and for capture gamma rays produced in the PDX floor and roof shield. The model also provides the correct neutron and capture gamma leakage current spectra and angular distributions, averaged over the top roof shield surface. For the PDX, this method is nearly as accurate as multidimensional techniques for computing the roof leakage and is much less costly. The actual neutron skyshine dose is computed using a Monte Carlo model with the neutron source at the roof surface obtained from the slab S /SUB n/ calculation. The capture gamma dose is computed using a simple point-kernel single-scatter method.« less

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

PubMed Central

Jang, Sung Kyu; Youn, Jiyoun; Song, Young Jae; Lee, Sungjoo

2016-01-01

Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality. PMID:27458024

Experimental investigation of leak detection using mobile distributed monitoring system

NASA Astrophysics Data System (ADS)

Chen, Jiang; Zheng, Junli; Xiong, Feng; Ge, Qi; Yan, Qixiang; Cheng, Fei

2018-01-01

The leak detection of rockfill dams is currently hindered by spatial and temporal randomness and wide monitoring range. The spatial resolution of fiber Bragg grating (FBG) temperature sensing technology is related to the distance between measuring points. As a result, the number of measuring points should be increased to ensure that the precise location of the leak is detected. However, this leads to a higher monitoring cost. Consequently, it is difficult to promote and apply this technology to effectively monitor rockfill dam leakage. In this paper, a practical mobile distributed monitoring system with dual-tubes is used by combining the FBG sensing system and hydrothermal cycling system. This dual-tube structure is composed of an outer polyethylene of raised temperature resistance heating pipe, an inner polytetrafluoroethylene tube, and a FBG sensor string, among which, the FBG sensor string can be dragged freely in the internal tube to change the position of the measuring points and improve the spatial resolution. In order to test the effectiveness of the system, the large-scale model test of concentrated leakage in 13 working conditions is carried out by identifying the location, quantity, and leakage rate of leakage passage. Based on Newton’s law of cooling, the leakage state is identified using the seepage identification index ζ v that was confirmed according to the cooling curve. Results suggested that the monitoring system shows high sensitivity and can improve the spatial resolution with limited measuring points, and thus better locate the leakage area. In addition, the seepage identification index ζ v correlated well with the leakage rate qualitatively.

Determination of secondhand smoke leakage from the smoking room of an Internet café.

PubMed

Kim, Hyejin; Lee, Kiyoung; An, Jaehoon; Won, Sungho

2017-10-01

Although Internet cafes have been designated as nonsmoking areas in Korea, smoke-free legislation has allowed the installation of indoor smoking rooms. The purposes of this study were to determine secondhand smoke (SHS) leakage from an Internet café smoking room and to identify factors associated with SHS leakage. PM 2.5 (particulate matter with an aerodynamic diameter ≤2.5 μm) mass concentrations were measured simultaneously both inside and outside the door to the smoking room. During each measurement, a field technician observed how long the smoking room door was opened and closed, the direction of door opening, and the number of smokers. A multivariate linear regression model was used to identify the causality of SHS leakage from the smoking room. A time series of PM 2.5 concentrations both inside and outside the door to the smoking room showed a similar trend. SHS leakage was significantly increased because of factors associated with the direction of the smoking room door being opened, the duration of how long the smoking room door was opened until it was closed, and the average PM 2.5 concentration inside the smoking room when the door was opened. SHS leakage from inside the smoking room to outside the smoking room was evident especially when the smoking room door was opened. Since the smoking room is not effective in preventing SHS exposure, the smoking room should be removed from the facilities to protect citizens from SHS exposure through revision of the current legislation, which permits installation of a smoking room. This paper concerns secondhand smoke (SHS) leakage from indoor smoking room. Unlike previous studies, the authors statistically analyzed the causality of PM 2.5 concentration leakage from a smoking room using time-series analysis. Since the authors selected the most common smoking room, the outcomes could be generalized. The study demonstrated that SHS leakage from smoking room and SHS leakage were clearly associated with door opening. The finding demonstrated ineffectiveness of smoking room to protect citizens and supports removal of indoor smoking room.

Gallium phosphide energy converters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sims, P.E.; Dinetta, L.C.; Goetz, M.A.

1995-10-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp {minus}17) A/sq cm have been measured andmore » the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.« less

Gallium phosphide energy converters

NASA Astrophysics Data System (ADS)

Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

1995-10-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Gallium phosphide energy converters

NASA Technical Reports Server (NTRS)

Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

1995-01-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Determinants of Unintentional Leaks During CPAP Treatment in OSA.

PubMed

Lebret, Marius; Arnol, Nathalie; Martinot, Jean-Benoît; Lambert, Loïc; Tamisier, Renaud; Pepin, Jean-Louis; Borel, Jean-Christian

2018-04-01

Unintentional leakage from the mouth or around the mask may lead to cessation of CPAP treatment; however, the causes of unintentional leaks are poorly understood. The objectives of this study were (1) to identify determining factors of unintentional leakage and (2) to determine the effect of the type of mask (nasal/oronasal) used on unintentional leakage. Seventy-four polysomnograms from patients with OSA syndrome treated with auto-CPAP were analyzed (23 women; 56 ± 13 years; BMI, 32.9 kg/m 2 (range, 29.0-38.0 kg/m 2 ). Polysomnographic recordings were obtained under auto-CPAP, and mandibular behavior was measured with a magnetic sensor. After sleep and respiratory scoring, polysomnographic signals were computed as mean values over nonoverlapping 10-s intervals. The presence/absence of unintentional leakage was dichotomized for each 10-s interval (yes/no). Univariate and multivariate conditional regression models estimated the risk of unintentional leaks during an interval "T" based on the explanatory variables from the previous interval "T-1." A sensitivity analysis for the type of mask was then conducted. The univariate analysis showed that mandibular lowering (mouth opening), a high level of CPAP, body position (other than supine), and rapid eye movement (REM) sleep increased the risk of unintentional leaks and microarousal decreased it. In the multivariate analysis, the same variables remained independently associated with an increased risk of unintentional leakage. The sensitivity analysis showed that oronasal masks reduced the risk of unintentional leaks in cases of mouth opening and REM sleep. Mouth opening, CPAP level, sleep position, and REM sleep independently contribute to unintentional leakage. These results provide a strong rationale for the definition of phenotypes and the individual management of leaks during CPAP treatment. Copyright © 2017 American College of Chest Physicians. Published by Elsevier Inc. All rights reserved.

76 FR 64223 - Cardiovascular Devices; Reclassification of External Pacemaker Pulse Generator Devices

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-17

... arrhythmias; and 4. Micro/macro shocks--Uncontrolled leakage currents or patient auxiliary currents can cause...); Medtronic, Inc. v. Lohr, 518 U.S. 470 (1996); and Riegel v. Medtronic, Inc. 128 S. Ct. 999 (2008)). If this...

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

PubMed

Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter M

2017-02-28

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

The footprint of CO2 leakage in the water-column: Insights from numerical modeling based on a North Sea gas release experiment

NASA Astrophysics Data System (ADS)

Vielstädte, L.; Linke, P.; Schmidt, M.; Sommer, S.; Wallmann, K.; McGinnis, D. F.; Haeckel, M.

2013-12-01

Assessing the environmental impact of potential CO2 leakage from offshore carbon dioxide storage sites necessitates the investigation of the corresponding pH change in the water-column. Numerical models have been developed to simulate the buoyant rise and dissolution of CO2 bubbles in the water-column and the subsequent near-field dispersion of dissolved CO2 in seawater under ocean current and tidal forcing. In order to test and improve numerical models a gas release experiment has been conducted at 80 m water-depth within the Sleipner area (North Sea). CO2 and Kr (used as inert tracer gas) were released on top of a benthic lander at varying gas flows (<140 kg/day) and bubble sizes (de: 1-6 mm). pCO2 and pH were measured by in situ sensors to monitor the spread of the solute in different vertical heights and distances downstream of the artificial leak. The experiment and numerical analysis show that the impact of such leakage rates is limited to the near-field bottom waters, due to the rapid dissolution of CO2 bubbles in seawater (CO2 is being stripped within the first two to five meters of bubble rise). In particular, small bubbles, which will dissolve close to the seafloor, may cause a dangerous low-pH environment for the marine benthos. However, on the larger scale, the advective transport by e.g. tidal currents, dominates the CO2 dispersal in the North Sea and dilutes the CO2 peak quickly. The model results show that at the small scales (<100 m) of the CO2 plume the lateral eddy diffusion (~0.01 m2/s) has only a negligible effect. Overall, we can postulate that CO2 leakage at a rate of ~ 100 kg per day as in our experiment will only have a localized impact on the marine environment, thereby reducing pH substantially (by 0.4 units) within a diameter of less than 50 m around the release spot (depending on the duration of leakage and the current velocities). Strong currents and tidal cycles significantly reduce the spreading of low-pH water masses into the far-field by efficiently diluting the amount of CO2 in ambient seawater.

Coupled Multi-physics analysis of Caprock Integrity and Fault Reactivation during CO2 Sequestration*

NASA Astrophysics Data System (ADS)

Newell, P.; Martinez, M. J.; Bishop, J.

2012-12-01

Structural/stratigraphic trapping beneath a low-permeable caprock layer is the primary trapping mechanism for long-term subsurface sequestration of CO2. Pre-existing fracture networks, injection induced fractures, and faults are of concern for possible CO2 leakage both during and after injection. In this work we model the effects of both caprock jointing and a fault on the caprock sealing integrity during various injection scenarios. The modeling effort uses a three-dimensional finite-element based coupled multiphase flow and geomechanics simulator. The joints within the caprock are idealized as equally spaced and parallel. Both the mechanical and flow behavior of the joint network are treated within an effective continuum formulation. The mechanical behavior of the joint network is linear elastic in shear and nonlinear elastic in the normal direction. The flow behavior of the joint network is treated using the classical cubic-law relating flow rate and aperture. The flow behavior is then upscaled to obtain an effective permeability. The fault is modeled as a finite-thickness layer with multiple joint sets. The joint sets within the fault region are modeled following the same mechanical and flow formulation as the joints within the caprock. Various injection schedules as well as fault and caprock jointing configurations within a proto-typical sequestration site have been investigated. The resulting leakage rates through the caprock and fault are compared to those assuming intact material. The predicted leakage rates are a strong nonlinear function of the injection rate. *This material is based upon work supported as part of the Center for Frontiers of Subsurface Energy Security, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001114. Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energys National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Illumination effects on the ferroelectric and photovoltaic properties of Pb0.95La0.05Zr0.54Ti0.46O3 thin film based asymmetric MFM structure

NASA Astrophysics Data System (ADS)

Batra, V.; Kotru, S.

2017-12-01

We report the effects of illumination on the ferroelectric and photovoltaic properties of the Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) thin film based asymmetric metal/ferroelectric/metal capacitor structure, using Au as a top electrode and Pt as a bottom electrode. Conductive-AFM (atomic force microscopy) measurements demonstrate the evolution of charge carriers in PLZT films on illumination. The capacitance-voltage, the polarization-electric field, and the leakage current-voltage characteristics of the asymmetric Au/PLZT/Pt capacitor are discussed under dark and illuminated conditions. The light generates charge carriers in the film, which increase the coercive field and net remnant polarization and decrease the capacitance. The leakage current of the capacitor increases by an order of magnitude upon illumination. The leakage current data analyzed to study the conduction mechanism shows that the capacitor structure follows the Schottky emission "1/4" law. The illuminated current density-voltage curve of the capacitor shows non-zero photovoltaic parameters. An open circuit voltage (Voc) of -0.19 V and a short circuit current density (Jsc) of 1.48 μA/cm2 were obtained in an unpoled film. However, after positive poling, the illuminated curve shifts towards a higher voltage value resulting in a Voc of -0.93 V. After negative poling, the curve shows no change in the Voc value. For both poling directions, the Jsc values decrease. The photocurrent in the capacitor shows a linear variation with the incident illumination intensity.

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaidi, Z. H., E-mail: zaffar.zaidi@sheffield.ac.uk; Lee, K. B.; Qian, H.

2014-12-28

In this work, we have compared SiN{sub x} passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN{sub x} passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10{sup 4}–10{sup 5} to 10{sup 7}) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid ismore » believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D{sub it}) is reduced (from 4.86 to 0.90 × 10{sup 12 }cm{sup −2} eV{sup −1}), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN{sub x} passivation after full device fabrication results in the reduction of D{sub it} and improves the surface related current collapse.« less

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers.

PubMed

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-12-01

GaN-based metal-oxide-semiconductor capacitors with ZrO 2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10 -9  A/cm 2 at 1 V was obtained when O 3 was used for the growth of ZrO 2 . Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

A concept of dynamic permission mechanism on android

NASA Astrophysics Data System (ADS)

Aron, Lukas; Hanacek, Petr

2016-02-01

This paper discuss the main security topic in mobile security area and this topic is protect user against the leakage of data. This work primarily contains the proposal of concept of dynamic permission mechanism for Android operating system. This mechanism deals with assignment or enforcement permissions to the application according to files that the application works with. Application has set of permissions that can use, but if the user opens confident files the application permissions should change its permission set and there should not be possible leakage of this secret data. The permissions set should be stricter according to opened confidential file or more open (without restriction) if the file is not secret file. The concept proposes the solution for protecting this data leakage. Idea covers rule that user should be avoided of change this permissions himself, but this behavior should be dynamic, automatic and independent. This proposal is mainly aimed to Android operating system, but the concept can be applied to other mobile platforms with some implementation changes.

Structural evaluation of a DTHR bundle divertor particle collector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prevenslik, T.V.

1980-09-01

The purpose of this report is to present a structural evaluation of the current bundle divertor particle collector BDPC design under a peak heat flux in relation to criteria that protect against coolant leakage into the plasma over replacement schedules planned during DTHR operation. In addition, an assessment of the BDPC structural integrity at higher heat fluxes is presented. Further, recommendations for modifications in the current BDPC design that would improve design reliability to be considered in future design studies are described. Finally, experimental test programs directed to establishing materials data necessary in providing greater confidence in subsequent structural evaluationsmore » of BDPC designs in relation to coolant leakage over planned replacement schedules are identified.« less

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Electrical evaluation of crack generation in SiNx and SiOxNy thin-film encapsulation layers for OLED displays

NASA Astrophysics Data System (ADS)

Park, Eun Kil; Kim, Sungmin; Heo, Jaeyeong; Kim, Hyeong Joon

2016-05-01

By measuring leakage current density, we detected crack generation in silicon nitride (SiNx) and silicon oxynitride (SiOxNy) thin-film encapsulation layers, and correlated with the films' water vapor permeability characteristics. After repeated bending cycles, both the changes in water vapor transmission rate and leakage current density were directly proportional to the crack density. Thick SiNx films had better water vapor barrier characteristics in their pristine state, but cyclic loading led to fast failure. Varying the atomic concentration of the SiOxNy films affected their bending reliability. We attribute these differences to changes in the shape of the crack tip as the oxygen content varies.

Method for surface passivation and protection of cadmium zinc telluride crystals

DOEpatents

Mescher, Mark J.; James, Ralph B.; Schlesinger, Tuviah E.; Hermon, Haim

2000-01-01

A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

Investigation of Turbulent Tip Leakage Vortex in an Axial Water Jet Pump with Large Eddy Simulation

NASA Technical Reports Server (NTRS)

Hah, Chunill; Katz, Joseph

2012-01-01

Detailed steady and unsteady numerical studies were performed to investigate tip clearance flow in an axial water jet pump. The primary objective is to understand physics of unsteady tip clearance flow, unsteady tip leakage vortex, and cavitation inception in an axial water jet pump. Steady pressure field and resulting steady tip leakage vortex from a steady flow analysis do not seem to explain measured cavitation inception correctly. The measured flow field near the tip is unsteady and measured cavitation inception is highly transient. Flow visualization with cavitation bubbles shows that the leakage vortex is oscillating significantly and many intermittent vortex ropes are present between the suction side of the blade and the tip leakage core vortex. Although the flow field is highly transient, the overall flow structure is stable and a characteristic frequency seems to exist. To capture relevant flow physics as much as possible, a Reynolds-averaged Navier-Stokes (RANS) calculation and a Large Eddy Simulation (LES) were applied for the current investigation. The present study reveals that several vortices from the tip leakage vortex system cross the tip gap of the adjacent blade periodically. Sudden changes in local pressure field inside tip gap due to these vortices create vortex ropes. The instantaneous pressure filed inside the tip gap is drastically different from that of the steady flow simulation. Unsteady flow simulation which can calculate unsteady vortex motion is necessary to calculate cavitation inception accurately even at design flow condition in such a water jet pump.

Bacterial leakage through temporary fillings in core buildup composite material - an in vitro study.

PubMed

Rechenberg, Dan-Krister; Schriber, Martina; Attin, Thomas

2012-08-01

To evaluate the ability of the provisional filling material Cavit-W alone or in combination with different restorative materials to prevent bacterial leakage through simulated access cavities in a resin buildup material. LuxaCore resin cylinders were subdivided into 4 experimental groups (n = 30), plus a positive (n = 5) and a negative (n = 30) control group. One bore hole was drilled through each cylinder, except those in the negative control group (G1). The holes were filled with Cavit-W (G2), Cavit-W and Ketac-Molar (glassionomer cement, G3), Cavit-W and LuxaCore bonded with LuxaBond (G4), Cavit-W and LuxaCore (G5), or left empty (G6). Specimens were mounted in a two-chamber leakage setup. The upper chamber was inoculated with E. faecalis. An enterococci-selective broth was used in the lower chamber. Leakage was assessed for 60 days and compared using Fisher's exact test (α < 0.05) corrected for multiple testing. Bacteria penetrated specimens in the positive control group within 24 h. All specimens in the negative control group resisted bacterial leakage for 60 days. Twenty-seven specimens in G2, 26 in G3, and 16 specimens in G5 showed bacterial leakage by the end of the experiment. G4 prevented bacterial penetration completely. The statistical comparison revealed significant differences between G4 and all other experimental groups. Under the current conditions, Cavit-W alone or combined with a glass-ionomer cement did not prevent bacterial leakage through a resin buildup material for two months. In contrast, covering Cavit-W with a bonded resin material resulted in a bacteria-tight seal for two months.

Hypertonic Saline Reduces Vascular Leakage in a Mouse Model of Severe Dengue

PubMed Central

Tan, Kar Wai; Angeli, Veronique; Moochhala, Shabbir; Ooi, Eng Eong; Alonso, Sylvie

2013-01-01

Dengue (DEN) is a mosquito-borne viral disease and represents a serious public health threat and an economical burden throughout the tropics. Dengue clinical manifestations range from mild acute febrile illness to severe DEN hemorrhagic fever/DEN shock syndrome (DHF/DSS). Currently, resuscitation with large volumes of isotonic fluid remains the gold standard of care for DEN patients who develop vascular leakage and shock. Here, we investigated the ability of small volume of hypertonic saline (HTS) suspensions to control vascular permeability in a mouse model of severe DEN associated with vascular leakage. Several HTS treatment regimens were considered and our results indicated that a single bolus of 7.5% NaCl at 4 mL per kg of body weight administered at the onset of detectable vascular leakage rapidly and significantly reduced vascular leak for several days after injection. This transient reduction of vascular leakage correlated with reduced intestine and liver damage with restoration of the hepatic functions, and resulted in delayed death of the infected animals. Mechanistically, we showed that HTS did not directly impact on the viral titers but resulted in lower immune cells counts and decreased systemic levels of soluble mediators involved in vascular permeability. In addition, we demonstrated that neutrophils do not play a critical role in DEN-associated vascular leakage and that the therapeutic effect of HTS is not mediated by its impact on the neutrophil counts. Together our data indicate that HTS treatment can transiently but rapidly reduce dengue-associated vascular leakage, and support the findings of a recent clinical trial which evaluated the efficacy of a hypertonic suspension to impact on vascular permeability in DSS children. PMID:23637867

Effects of sub-seabed CO2 leakage: Short- and medium-term responses of benthic macrofaunal assemblages.

PubMed

Amaro, T; Bertocci, I; Queiros, A M; Rastelli, E; Borgersen, G; Brkljacic, M; Nunes, J; Sorensen, K; Danovaro, R; Widdicombe, S

2018-03-01

The continued rise in atmospheric carbon dioxide (CO 2 ) levels is driving climate change and temperature shifts at a global scale. CO 2 Capture and Storage (CCS) technologies have been suggested as a feasible option for reducing CO 2 emissions and mitigating their effects. However, before CCS can be employed at an industrial scale, any environmental risks associated with this activity should be identified and quantified. Significant leakage of CO 2 from CCS reservoirs and pipelines is considered to be unlikely, however direct and/or indirect effects of CO 2 leakage on marine life and ecosystem functioning must be assessed, with particular consideration given to spatial (e.g. distance from the source) and temporal (e.g. duration) scales at which leakage impacts could occur. In the current mesocosm experiment we tested the potential effects of CO 2 leakage on macrobenthic assemblages by exposing infaunal sediment communities to different levels of CO 2 concentration (400, 1000, 2000, 10,000 and 20,000 ppm CO 2 ), simulating a gradient of distance from a hypothetic leakage, over short-term (a few weeks) and medium-term (several months). A significant impact on community structure, abundance and species richness of macrofauna was observed in the short-term exposure. Individual taxa showed idiosyncratic responses to acidification. We conclude that the main impact of CO 2 leakage on macrofaunal assemblages occurs almost exclusively at the higher CO 2 concentration and over short time periods, tending to fade and disappear at increasing distance and exposure time. Although under the cautious perspective required by the possible context-dependency of the present findings, this study contributes to the cost-benefit analysis (environmental risk versus the achievement of the intended objectives) of CCS strategies. Copyright © 2018. Published by Elsevier Ltd.

Comparing Natural Gas Leakage Detection Technologies Using an Open-Source "Virtual Gas Field" Simulator.

PubMed

Kemp, Chandler E; Ravikumar, Arvind P; Brandt, Adam R

2016-04-19

We present a tool for modeling the performance of methane leak detection and repair programs that can be used to evaluate the effectiveness of detection technologies and proposed mitigation policies. The tool uses a two-state Markov model to simulate the evolution of methane leakage from an artificial natural gas field. Leaks are created stochastically, drawing from the current understanding of the frequency and size distributions at production facilities. Various leak detection and repair programs can be simulated to determine the rate at which each would identify and repair leaks. Integrating the methane leakage over time enables a meaningful comparison between technologies, using both economic and environmental metrics. We simulate four existing or proposed detection technologies: flame ionization detection, manual infrared camera, automated infrared drone, and distributed detectors. Comparing these four technologies, we found that over 80% of simulated leakage could be mitigated with a positive net present value, although the maximum benefit is realized by selectively targeting larger leaks. Our results show that low-cost leak detection programs can rely on high-cost technology, as long as it is applied in a way that allows for rapid detection of large leaks. Any strategy to reduce leakage should require a careful consideration of the differences between low-cost technologies and low-cost programs.

Routine Use of Contrast Swallow After Total Gastrectomy and Esophagectomy: Is it Justified?

PubMed

El-Sourani, Nader; Bruns, Helge; Troja, Achim; Raab, Hans-Rudolf; Antolovic, Dalibor

2017-01-01

After gastrectomy or esophagectomy, esophagogastrostomy and esophagojejunostomy are commonly used for reconstruction. Water-soluble contrast swallow is often used as a routine screening to exclude anastomotic leakage during the first postoperative week. In this retrospective study, the sensitivity and specificity of oral water-soluble contrast swallow for the detection of anastomotic leakage and its clinical symptoms were analysed. Records of 104 consecutive total gastrectomies and distal esophagectomies were analysed. In all cases, upper gastrointestinal contrast swallow with the use of a water-soluble contrast agent was performed on the 5 th postoperative day. Extravasation of the contrast agent was defined as anastomotic leakage. When anastomotic insufficiency was suspected but no extravasation was present, a computed tomography (CT) scan and upper endoscopy were performed. Oral contrast swallow detected 7 anastomotic leaks. Based on CT-scans and upper endoscopy, the true number of anastomotic leakage was 15. The findings of the oral contrast swallow were falsely positive in 4 and falsely negative in 12 patients, respectively. The sensitivity and specificity of the oral contrast swallow was 20% and 96%, respectively. Routine radiological contrast swallow following total gastrectomy or distal esophagectomy cannot be recommended. When symptoms of anastomotic leakage are present, a CT-scan and endoscopy are currently the methods of choice.

Determination of canal leakage potential using continuous resistivity profiling techniques, Interstate and Tri-State Canals, western Nebraska and eastern Wyoming, 2004

USGS Publications Warehouse

Ball, Lyndsay B.; Kress, Wade H.; Steele, Gregory V.; Cannia, James C.; Andersen, Michael J.

2006-01-01

In the North Platte River Basin, a ground-water model is being developed to evaluate the effectiveness of using water leakage from selected irrigation canal systems to enhance ground-water recharge. The U.S. Geological Survey, in cooperation with the North Platte Natural Resources District, used land-based capacitively coupled and water-borne direct-current continuous resistivity profiling techniques to map the lithology of the upper 8 meters and to interpret the relative canal leakage potential of 110 kilometers of the Interstate and Tri-State Canals in western Nebraska and eastern Wyoming. Lithologic descriptions from 25 test holes were used to evaluate the effectiveness of both techniques for indicating relative grain size. An interpretive color scale was developed that symbolizes contrasting resistivity features indicative of different grain-size categories. The color scale was applied to the vertically averaged resistivity and used to classify areas of the canals as having either high, moderate, or low canal leakage potential. When results were compared with the lithologic descriptions, both land-based and water-borne continuous resistivity profiling techniques were determined to be effective at differentiating coarse-grained from fine-grained sediment. Both techniques were useful for producing independent, similar interpretations of canal leakage potential.

On the feasibility of the computational modelling of the endoluminal vacuum-assisted closure of an oesophageal anastomotic leakage

PubMed Central

Bellomo, Facundo J.; Rosales, Iván; del Castillo, Luis F.; Sánchez, Ricardo; Turon, Pau

2018-01-01

Endoluminal vacuum-assisted closure (E-VAC) is a promising therapy to treat anastomotic leakages of the oesophagus and bowel which are associated with high morbidity and mortality rates. An open-pore polyurethane foam is introduced into the leakage cavity and connected to a device that applies a suction pressure to accelerate the closure of the defect. Computational analysis of this healing process can advance our understanding of the biomechanical mechanisms at play. To this aim, we use a dual-stage finite-element analysis in which (i) the structural problem addresses the cavity reduction caused by the suction and (ii) a new constitutive formulation models tissue healing via permanent deformations coupled to a stiffness increase. The numerical implementation in an in-house code is described and a qualitative example illustrates the basic characteristics of the model. The computational model successfully reproduces the generic closure of an anastomotic leakage cavity, supporting the hypothesis that suction pressure promotes healing by means of the aforementioned mechanisms. However, the current framework needs to be enriched with empirical data to help advance device designs and treatment guidelines. Nonetheless, this conceptual study confirms that computational analysis can reproduce E-VAC of anastomotic leakages and establishes the bases for better understanding the mechanobiology of anastomotic defect healing. PMID:29515846

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Light exposure induces short- and long-term changes in the excitability of retinorecipient neurons in suprachiasmatic nucleus

PubMed Central

LeSauter, Joseph; Cloues, Robin; Witkovsky, Paul

2011-01-01

The suprachiasmatic nucleus (SCN) is the locus of a hypothalamic circadian clock that synchronizes physiological and behavioral responses to the daily light-dark cycle. The nucleus is composed of functionally and peptidergically diverse populations of cells for which distinct electrochemical properties are largely unstudied. SCN neurons containing gastrin-releasing peptide (GRP) receive direct retinal input via the retinohypothalamic tract. We targeted GRP neurons with a green fluorescent protein (GFP) marker for whole cell patch-clamping. In these neurons, we studied short (0.5–1.5 h)- and long-term (2–6 h) effects of a 1-h light pulse (LP) given 2 h after lights off [Zeitgeber time (ZT) 14:00–15:00] on membrane potential and spike firing. In brain slices taken from light-exposed animals, cells were depolarized, and spike firing rate increased between ZT 15:30 and 16:30. During a subsequent 4-h period beginning around ZT 17:00, GRP neurons from light-exposed animals were hyperpolarized by ∼15 mV. None of these effects was observed in GRP neurons from animals not exposed to light or in immediately adjacent non-GRP neurons whether or not exposed to light. Depolarization of GRP neurons was associated with a reduction in GABAA-dependent synaptic noise, whereas hyperpolarization was accompanied both by a loss of GABAA drive and suppression of a TTX-resistant leakage current carried primarily by Na. This suggests that, in the SCN, exposure to light may induce a short-term increase in GRP neuron excitability mediated by retinal neurotransmitters and neuropeptides, followed by long-term membrane hyperpolarization resulting from suppression of a leakage current, possibly resulting from genomic signals. PMID:21593396

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

NASA Technical Reports Server (NTRS)

Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

2002-01-01

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

NASA Astrophysics Data System (ADS)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Gheshlaghi, N.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-01-01

Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs.

Fabrication of large area Si cylindric drift detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, W.; Kraner, H.W.; Li, Z.

1993-04-01

Advanced Si drift detector, a large area cylindrical drift detector (CDD), processing steps, with the exception of the ion implantation, were carried out in the BNL class 100 cleanroom. The double-side planer process technique was developed for the fabrication of CDD. Important improvements of the double-side planer process in this fabrication are the introduction of Al implantation protection mask and the remaining of a 1000 Angstroms oxide layer in the p-window during the implantation. Another important design of the CDD is the structure called ``river,`` which ,allows the current generated on Si-SiO{sub 2} interface to ``flow`` into the guard anode,more » and thus can minimize the leakage current at the signed anode. The test result showed that most of the signal anodes have the leakage current about 0.3 nA/cm{sup 2} for the best detector.« less

Burner ignition system

DOEpatents

Carignan, Forest J.

1986-01-21

An electronic ignition system for a gas burner is battery operated. The battery voltage is applied through a DC-DC chopper to a step-up transformer to charge a capacitor which provides the ignition spark. The step-up transformer has a significant leakage reactance in order to limit current flow from the battery during initial charging of the capacitor. A tank circuit at the input of the transformer returns magnetizing current resulting from the leakage reactance to the primary in succeeding cycles. An SCR in the output circuit is gated through a voltage divider which senses current flow through a flame. Once the flame is sensed, further sparks are precluded. The same flame sensor enables a thermopile driven main valve actuating circuit. A safety valve in series with the main gas valve responds to a control pressure thermostatically applied through a diaphragm. The valve closes after a predetermined delay determined by a time delay orifice if the pilot gas is not ignited.

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

Recommendation advertising method based on behavior retargeting

NASA Astrophysics Data System (ADS)

Zhao, Yao; YIN, Xin-Chun; CHEN, Zhi-Min

2011-10-01

Online advertising has become an important business in e-commerce. Ad recommended algorithms are the most critical part in recommendation systems. We propose a recommendation advertising method based on behavior retargeting which can avoid leakage click of advertising due to objective reasons and can observe the changes of the user's interest in time. Experiments show that our new method can have a significant effect and can be further to apply to online system.

Study of gain homogeneity and radiation effects of Low Gain Avalanche Pad Detectors

NASA Astrophysics Data System (ADS)

Gallrapp, C.; Fernández García, M.; Hidalgo, S.; Mateu, I.; Moll, M.; Otero Ugobono, S.; Pellegrini, G.

2017-12-01

Silicon detectors with intrinsic charge amplification implementing a n++-p+-p structure are considered as a sensor technology for future tracking and timing applications in high energy physics experiments. The performance of the intrinsic gain in Low Gain Avalanche Detectors (LGAD) after irradiation is crucial for the characterization of radiation hardness and timing properties in this technology. LGAD devices irradiated with reactor neutrons or 800 MeV protons reaching fluences of 2.3 × 1016 neq/cm2 were characterized using Transient Current Technique (TCT) measurements with red and infra-red laser pulses. Leakage current variations observed in different production lots and within wafers were investigated using Thermally Stimulated Current (TSC). Results showed that the intrinsic charge amplification is reduced with increasing fluence up to 1015 neq/cm2 which is related to an effective acceptor removal. Further relevant issues were charge collection homogeneity across the detector surface and leakage current performance before and after irradiation.

Low-energy BF2, BCl2, and BBr2 implants for ultrashallow P+-N junctions

NASA Astrophysics Data System (ADS)

Nandan, S. R.; Agarwal, Vikas; Banerjee, Sanjay K.

1997-08-01

We have examined low energy BCl2 and BBr2 implants as a means of fabricating ultra-shallow P+-N junctions. Five keV and 9 keV BCl2 implants and 18 keV BBr2 implants have been compared to 5 keV BF2 implants to study the benefits of using these species. BCl2 and BBr2, being heavier species, have a lower projected range and produce more damage. The greater damage restricts channeling, resulting in shallower as-implanted profiles. The increased damage amorphizes the substrate at low implant doses which results in reduced transient enhanced diffusion (TED) during the post-implant anneal. Post-anneal SIMS profiles indicate a junction depth reduction of over 10 nm (at 5 X 1017 cm-3 background doping) for 5 keV BCl2 implants as compared to 5 keV BF2 implants. Annealed junctions as shallow as 10 nm have been obtained from the 18 keV BBr2 implants. The increased damage degrades the electrical properties of these junctions by enhancing the leakage current densities. BCl2 implanted junctions have leakage current densities of approximately 1 (mu) A/cm2 as compared to 10 nA/cm2 for the BF2 implants. BBr2 implants have a lower leakage density of approximately 50 nA/cm2. Low energy BBr2 implants offer an exciting alternative for fabricating low leakage, ultra-shallow P+-N junctions.

Southern ocean winds during past (and future) warm periods and their affect on Agulhas Leakage and the Atlantic Merdional Overturning Circulation

NASA Astrophysics Data System (ADS)

Patel, N. P.; Deconto, R. M.; Condron, A.

2013-12-01

The leakage of Agulhas Current water into the South Atlantic is now thought to be a major player in global climate change. The volume of Agulhas Leakage is linked to the strength and position of southern westerlies. Past changes in the westerly winds over the southern ocean have been noted on glacial-interglacial timescales, in response to both Northern Hemispheric conditions and more proximal changes in Antarctic ice volume. Over recent decades, a southward shift in the southern ocean westerlies has been observed and is expected to continue with projected climate warming. The resulting increase in Agulhas Leakage is thought to allow more warm, salty water from the Indian Ocean into the Atlantic, with the potential to impact the Atlantic Meridional Overturning circulation (AMOC). Some climate models have predicted global warming will result in a slowdown and weakening of the AMOC. A strengthening of the Agulhas Leakage therefore has the potential to counteract that slowdown. Much of the Agulhas leakage is carried in small eddies rotating off the main flow south of Cape Horn. High ocean model resolution (< 1/2°) is therefore required to simulate their response to the overlying wind field. However the majority of previous model studies have been too coarse in resolution to quantify the link between the Agulhas Leakage the AMOC. Here we run a series of global high-resolution ocean model (1/6°) experiments using the MITgcm to test the effect of a shift in the southern hemisphere westerlies on the Agulhas Leakage. A prescribed perturbation of the winds near South Africa shows a significant increase in Agulhas eddies into the Atlantic. Following this, we have conducted longer simulations with the winds over the Southern Ocean perturbed to reflect both past and possible future shifts in the wind field to quantify changes in North Atlantic Deep Water formation and the overall response of the AMOC to this perturbation.

Effect of defects on the electrical/optical performance of gallium nitride based junction devices

NASA Astrophysics Data System (ADS)

Ferdous, Mohammad Shahriar

Commercial GaN based electronic and optoelectronic devices possess a high density (107-109 cm-2) of threading dislocations (TDs) because of the large mismatch in the lattice constant and the thermal expansion coefficient between the epitaxial layer structure and the substrate. In spite of these dislocations, high brightness light emitting diodes (LEDs) utilizing InGaN or AlGaN multiple quantum wells (MQWs) and with an external quantum efficiency of more than 40%, have already been achieved. This high external quantum efficiency in the presence of a high density of dislocations has been explained by carrier localization induced by indium fluctuations in the quantum well. TDs have been found to increase the reverse leakage current in InGaN based LEDs and to shorten the operating lifetime of InGaN MQW/GaN/AlGaN laser diodes. Thus it is important that the TD density is further reduced. It remains unclear how the TDs interact with the device to cause the effects mentioned above, hence the careful and precise characterization of threading defects and their effects on the electrical and optical performances of InGaN/GaN MQW LEDs is needed. This investigation will be useful not only from the point of view of device optimization but also to develop a clear understanding of the physical processes associated with TDs and especially with their effect on leakage current. We have employed photoelectrochemical (PEC) etching to accurately measure the dislocation density initially in home-grown GaN-based epitaxial structures and recently in InGaN/GaN MQW LEDs fabricated from commercial grade epitaxial structures that were supplied by our industrial collaborators. Measuring the electrical and electroluminescence (EL) characteristics of these devices has revealed correlations between some aspects of the LED behavior and the TD density, and promises to allow a deeper understanding of the role of threading dislocations to be elucidated. We observed that the LED reverse leakage current increased exponentially, and electroluminescence intensity decreased by 22%, as the TD density in the LEDs increased from 1.7 x 107 cm-2 to 2 x 108 cm-2. Forward voltage remained almost constant with the increase of TD density. A model of carrier conduction via hopping through defect related states, was found to provide an excellent fit to the experimental I-V data and provides a useful basis for understanding carrier conduction in the presence of TDs.

Integrating Flexible Sensor and Virtual Self-Organizing DC Grid Model With Cloud Computing for Blood Leakage Detection During Hemodialysis.

PubMed

Huang, Ping-Tzan; Jong, Tai-Lang; Li, Chien-Ming; Chen, Wei-Ling; Lin, Chia-Hung

2017-08-01

Blood leakage and blood loss are serious complications during hemodialysis. From the hemodialysis survey reports, these life-threatening events occur to attract nephrology nurses and patients themselves. When the venous needle and blood line are disconnected, it takes only a few minutes for an adult patient to lose over 40% of his / her blood, which is a sufficient amount of blood loss to cause the patient to die. Therefore, we propose integrating a flexible sensor and self-organizing algorithm to design a cloud computing-based warning device for blood leakage detection. The flexible sensor is fabricated via a screen-printing technique using metallic materials on a soft substrate in an array configuration. The self-organizing algorithm constructs a virtual direct current grid-based alarm unit in an embedded system. This warning device is employed to identify blood leakage levels via a wireless network and cloud computing. It has been validated experimentally, and the experimental results suggest specifications for its commercial designs. The proposed model can also be implemented in an embedded system.

Low Temperature Characterization of Ceramic and Film Power Capacitors

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad; Overton, Eric

1996-01-01

Among the key requirements for advanced electronic systems is the ability to withstand harsh environments while maintaining reliable and efficient operation. Exposures to low temperature as well as high temperature constitute such stresses. Applications where low temperatures are encountered include deep space missions, medical imaging equipment, and cryogenic instrumentation. Efforts were taken to design and develop power capacitors capable of wide temperature operation. In this work, ceramic and film power capacitors were developed and characterized as a function of temperature from 20 C to -185 C in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The manuscript presents the results that indicate good operational characteristic behavior and stability of the components tested at low temperatures.

Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers

NASA Astrophysics Data System (ADS)

Mensur Alkoy, Ebru; Uchiyama, Kiyoshi; Shiosaki, Tadashi; Alkoy, Sedat

2006-05-01

Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38-53 μC/cm2,2Ec=136-170 kV/cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes.

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Timing, predictors, and progress of third space fluid accumulation during preliminary phase fluid resuscitation in adult patients with dengue.

PubMed

Premaratna, R; Ragupathy, A; Miththinda, J K N D; de Silva, H J

2013-07-01

Fluid leakage remains the hallmark of dengue hemorrhagic fever (DHF). The applicability of currently recommended predictors of DHF for adults with dengue is questionable as these are based on studies conducted in children. One hundred and two adults with dengue were prospectively followed up to investigate whether home-based or hospital-based early phase fluid resuscitation has an impact on clinical and hematological parameters used for the diagnosis of early or critical phase fluid leakage. In the majority of subjects, third space fluid accumulation (TSFA) was detected on the fifth and sixth days of infection. The quantity and quality of fluids administered played no role in TSFA. A reduction in systolic blood pressure appeared to be more helpful than a reduction in pulse pressure in predicting fluid leakage. TSFA occurred with lower percentage rises in packed cell volume (PCV) than stated in the current recommendations. A rapid reduction in platelets, progressive reduction in white blood cells, percentage rises in Haemoglobin (Hb), and PCV, and rises in aspartate aminotransferase and alanine aminotransferase were observed in patients with TSFA and therefore with the development of severe illness. Clinicians should be aware of the limitations of currently recommended predictors of DHF in adult patients who are receiving fluid resuscitation. Copyright © 2013 International Society for Infectious Diseases. Published by Elsevier Ltd. All rights reserved.

Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

PubMed

Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

2013-02-01

For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

NASA Astrophysics Data System (ADS)

Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

2013-03-01

We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.

Investigation of Unsteady Flow Behavior in Transonic Compressor Rotors with LES and PIV Measurements

NASA Technical Reports Server (NTRS)

Hah, Chunill; Voges, Melanie; Mueller, Martin; Schiffer, Heinz-Peter

2009-01-01

In the present study, unsteady flow behavior in a modern transonic axial compressor rotor is studied in detail with large eddy simulation (LES) and particle image velocimetry (PIV). The main purpose of the study is to advance the current understanding of the flow field near the blade tip in an axial transonic compressor rotor near the stall and peak-efficiency conditions. Flow interaction between the tip leakage vortex and the passage shock is inherently unsteady in a transonic compressor. Casing-mounted unsteady pressure transducers have been widely applied to investigate steady and unsteady flow behavior near the casing. Although many aspects of flow have been revealed, flow structures below the casing cannot be studied with casing-mounted pressure transducers. In the present study, unsteady velocity fields are measured with a PIV system and the measured unsteady flow fields are compared with LES simulations. The currently applied PIV measurements indicate that the flow near the tip region is not steady even at the design condition. This self-induced unsteadiness increases significantly as the compressor rotor operates near the stall condition. Measured data from PIV show that the tip clearance vortex oscillates substantially near stall. The calculated unsteady characteristics of the flow from LES agree well with the PIV measurements. Calculated unsteady flow fields show that the formation of the tip clearance vortex is intermittent and the concept of vortex breakdown from steady flow analysis does not seem to apply in the current flow field. Fluid with low momentum near the pressure side of the blade close to the leading edge periodically spills over into the adjacent blade passage. The present study indicates that stall inception is heavily dependent on unsteady behavior of the flow field near the leading edge of the blade tip section for the present transonic compressor rotor.

EVA Suit Microbial Leakage Investigation Project

NASA Technical Reports Server (NTRS)

Falker, Jay; Baker, Christopher; Clayton, Ronald; Rucker, Michelle

2016-01-01

The objective of this project is to collect microbial samples from various EVA suits to determine how much microbial contamination is typically released during simulated planetary exploration activities. Data will be released to the planetary protection and science communities, and advanced EVA system designers. In the best case scenario, we will discover that very little microbial contamination leaks from our current or prototype suit designs, in the worst case scenario, we will identify leak paths, learn more about what affects leakage--and we'll have a new, flight-certified swab tool for our EVA toolbox.

Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

NASA Astrophysics Data System (ADS)

Ben Elbahri, M.; Kahouli, A.; Mercey, B.; Lebedev, O.; Donner, W.; Lüders, U.

2018-02-01

Dielectrics based on amorphous sub-nanometric laminates of TiO2 and Al2O3 are subject to elevated dielectric losses and leakage currents, in large parts due to the extremely thin individual layer thickness chosen for the creation of the Maxwell-Wagner relaxation and therefore the high apparent dielectric constants. The optimization of performances of the laminate itself being strongly limited by this contradiction concerning its internal structure, we will show in this study that modifications of the dielectric stack of capacitors based on these sub-nanometric laminates can positively influence the dielectric losses and the leakage, as for example the nature of the electrodes, the introduction of thick insulating layers at the laminate/electrode interfaces and the modification of the total laminate thickness. The optimization of the dielectric stack leads to the demonstration of a capacitor with an apparent dielectric constant of 90, combined with low dielectric loss (tan δ) of 7 · 10-2 and with leakage currents smaller than 1  ×  10-6 A cm-2 at 10 MV m-1.

Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

NASA Astrophysics Data System (ADS)

Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

2018-04-01

The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.

2018-04-01

The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

PubMed Central

Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

2011-01-01

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications. PMID:22163786

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Evaluation of eddy current and magnetic techniques for inspecting rebars in bridge barrier rails

NASA Astrophysics Data System (ADS)

Lo, C. C. H.; Nakagawa, N.

2013-01-01

This paper reports on a feasibility study of using eddy current (EC) and magnetic flux leakage (MFL) methods to detect corrosion damage in rebars that anchor concrete barrier rails to the road deck of bridge structures. EC and MFL measurements were carried out on standalone rebars with and without artificial defects of 25% and 50% material loss, using a commercial EC-based rebar locator and a MFL system that was developed using giant magnetoresistance sensors to detect leakage fluxes from the defects. Both techniques can readily detect the defects at a distance of 2.5″ (63.5 mm). The amplitudes of the EC and MFL signals vary monotonically with the amount of material loss, indicating the potential of using the techniques to quantify material loss of standalone rebars.

Pinhole mediated electrical transport across LaTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide hetero-structures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Toutam, Vijaykumar

2013-11-01

Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

Effect of threading defects on InGaN /GaN multiple quantum well light emitting diodes

NASA Astrophysics Data System (ADS)

Ferdous, M. S.; Wang, X.; Fairchild, M. N.; Hersee, S. D.

2007-12-01

Photoelectrochemical etching was used to measure the threading defect (TD) density in InGaN multiple quantum well light-emitting diodes (LEDs) fabricated from commercial quality epitaxial wafers. The TD density was measured in the LED active region and then correlated with the previously measured characteristics of these LEDs. It was found that the reverse leakage current increased exponentially with TD density. The temperature dependence of this dislocation-related leakage current was consistent with a hopping mechanism at low reverse-bias voltage and Poole-Frenkel emission at higher reverse-bias voltage. The peak intensity and spectral width of the LED electroluminescence were found to be only weakly dependent on TD density for the measured TD range of 1×107-2×108cm-2.

Schottky barrier diode and method thereof

NASA Technical Reports Server (NTRS)

Aslam, Shahid (Inventor); Franz, David (Inventor)

2008-01-01

Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Water permeation and electrical properties of pottants, backings, and pottant/backing composites

NASA Technical Reports Server (NTRS)

Orehotsky, J.

1986-01-01

It is reported that the interface between plastic film back covers and ethylene vinyl acetates (EVA) or polyvinyl butyral (PVB) in photovoltaic modules can influence water permeation, and electrial properties of the composites such as leakage current and dielectric constant. The interface can either be one of two dissimilar materials in physical contact with no intermixing, or the interface can constitute a thin zone which is an interphase of the two materials having a gradient composition from one material to the other. The former condition is described as a discrete interface. A discrete interface model was developed to predict water permeation, dielectric strength, and leakage current for EVA, ethylene methyl acrylate (EMA), and PVB coupled to Tedlar and mylar films. Experimental data was compared with predicted data.

Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki

2017-06-01

Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model. He received the B.S. degree in School of Advanced Materials Engineering from Kookmin University, Seoul, South Korea in 2012, and the M.S. degree in Department of Materials Science and Engineering from Seoul National University, Seoul, South Korea in 2014. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and top-gate polycrystalline-silicon thin-film transistors. He received the M.S. degree in innovation technology from Ecol Polytechnique, Palaiseau, France in 2013. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and copper-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He received the B.S. degree in metallurgical engineering from Seoul National University, Seoul, South Korea, in 1974, and the M.S. and Ph.D. degrees in material science and engineering from Stanford University, Stanford, CA, USA, in 1980 and 1983, respectively. He is currently a Professor with the Department of Materials Science and Engineering, Seoul National University, Seoul.

Self-reported toileting behaviors in employed women: Are they associated with lower urinary tract symptoms?

PubMed

Palmer, Mary H; Willis-Gray, Marcella G; Zhou, Fang; Newman, Diane K; Wu, Jennifer M

2018-02-01

To describe toileting behaviors working women habitually use and investigate behaviors associated with lower urinary tract symptoms (LUTS), especially urinary urgency with or without leakage. Non-pregnant female employees of a large academic medical center 18 years and over were eligible to complete an online survey about bladder health and toileting behaviors. One hundred eighty-two women participated in the survey. The majority were white (83.52%), married (52.49%), had ≥1 pregnancy (54.40%), and in excellent health (93.41%). The average age and body mass index were 47.28 ± 13.56 years and 27.92 ± 6.78, respectively. The sample was further sub-divided into two groups: urinary urgency (N = 119) or no urinary urgency symptoms (N = 51). Habitual toileting behaviors for these groups (N = 170) included: sitting to urinate at home (98.24%), emptying the bladder completely (88.82%), emptying the bladder before leaving home (80.00%), and sitting to urinate when away from home (68.82%). Logistic regression analysis showed age increased the odds of urinary urgency (aOR 1.06, 95%CI 1.02-1.09). Women who waited too long to urinate at work (aOR 7.85, 95%CI 1.57-39.24) and wore panty liners for urinary leakage (aOR 2.86, 95%CI 1.25-6.56) had greater odds of urinary urgency than women who did neither. Most habitual toileting behaviors were not associated with urinary urgency except waiting too long to urinate when at work. Logistic regression revealed significant relationships among health-related factors, personal characteristics, behaviors, and urinary urgency. LUTS in women is both a women's health and occupational health issue. © 2017 Wiley Periodicals, Inc.

Beta-phenylethylamine inhibits K+ currents in neocortical neurons of the rat: a possible mechanism of beta-phenylethylamine-induced seizures.

PubMed

Kitamura, Taro; Munakata, Mitsutoshi; Haginoya, Kazuhiro; Tsuchiya, Shigeru; Iinuma, Kazuie

2008-08-01

beta-Phenylethylamine (beta-PEA), an endogenous amine synthesized in the brain, serves as a neuromodulator and is involved in the pathophysiology of various neurological disorders such as depression, schizophrenia, and attention-deficit hyperactivity disorder. beta-PEA fully exerts the physiological effects within the nanomolar concentration range via the trace amine receptors, but beta-PEA also causes convulsions at much higher concentrations via an as yet unknown mechanism. To investigate the electrophysiological mechanism by which beta-PEA induces convulsions, we examined the effect of beta-PEA on ionic currents passing through the cell membrane of dissociated rat cerebral cortical neurons, using a patch-clamp technique. The external application of beta-PEA suppressed ionic currents which continuously flowed when the membrane potential was held at -25 mV. The suppression was in a concentration-dependent manner and a half-maximal effective concentration was 540 muM. These currents suppressed by beta-PEA consisted of two K(+) currents: a time- and voltage-dependent K(+) current (M-current) and a leakage K(+) current. The suppression of the M-current reduces the efficacy of the current in limiting excessive neuronal firing, and the suppression of the leakage K(+) current can cause membrane depolarization and thus promote neuronal excitation. Reducing both of these currents in concert may produce neuronal seizing activity, which could conceivably underlie the convulsions induced by high-dose beta-PEA.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

External biliary drainage following major liver resection for perihilar cholangiocarcinoma: impact on development of liver failure and biliary leakage

PubMed Central

Olthof, Pim B.; Coelen, Robert J.S.; Wiggers, Jimme K.; Besselink, Marc G.H.; Busch, Olivier R.C.; van Gulik, Thomas M.

2016-01-01

Background Preoperative biliary drainage is considered essential in perihilar cholangiocarcinoma (PHC) requiring major hepatectomy with biliary-enteric reconstruction. However, evidence for postoperative biliary drainage as to protect the anastomosis is currently lacking. This study investigated the impact of postoperative external biliary drainage on the development of post-hepatectomy biliary leakage and liver failure (PHLF). Methods All patients who underwent major liver resection for suspected PHC between 2000 and 2015 were retrospectively analyzed. Biliary leakage and PHLF was defined as grade B or higher according to the International Study Group of Liver Surgery (ISGLS) criteria. Results Eighty-nine out of 125 (71%) patients had postoperative external biliary drainage. PHLF was more prevalent in the drain group (29% versus 6%; P = 0.004). There was no difference in the incidence of biliary leakage (32% versus 36%). On multivariable analysis, postoperative external biliary drainage was identified as an independent risk factor for PHLF (Odds-ratio 10.3, 95% confidence interval 2.1–50.4; P = 0.004). Conclusions External biliary drainage following major hepatectomy for PHC was associated with an increased incidence of PHLF. It is therefore not recommended to routinely use postoperative external biliary drainage, especially as there is no evidence that this decreases the risk of biliary anastomotic leakage. PMID:27037204

Reducing leakage current in semiconductor devices

DOEpatents

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Hydrogeology and ground-water flow in the Memphis and Fort Pillow aquifers in the Memphis area, Tennessee

USGS Publications Warehouse

Brahana, J.V.; Broshears, R.E.

2001-01-01

On the basis of known hydrogeology of the Memphis and Fort Pillow aquifers in the Memphis area, a three-layer, finite-difference numerical model was constructed and calibrated as the primary tool to refine understanding of flow in the aquifers. The model was calibrated and tested for accuracy in simulating measured heads for nine periods of transient flow from 1886-1985. Testing and sensitivity analyses indicated that the model accurately simulated observed heads areally as well as through time. The study indicates that the flow system is currently dominated by the distribution of pumping in relation to the distribution of areally variable confining units. Current withdrawal of about 200 million gallons per day has altered the prepumping flow paths, and effectively captured most of the water flowing through the aquifers. Ground-water flow is controlled by the altitude and location of sources of recharge and discharge, and by the hydraulic characteristics of the hydrogeologic units. Leakage between the Fort Pillow aquifer and Memphis aquifer, and between the Memphis aquifer and the water-table aquifers (alluvium and fluvial deposits) is a major component of the hydrologic budget. The study indicates that more than 50 percent of the water withdrawn from the Memphis aquifer in 1980 is derived from vertical leakage across confining units, and the leakage from the shallow aquifer (potential source of contamination) is not uniformly distributed. Simulated leakage was concentrated along the upper reaches of the Wolf and Loosahatchie Rivers, along the upper reaches of Nonconnah Creek, and the surficial aquifer of the Mississippi River alluvial plain. These simulations are supported by the geologic and geophysical evidence suggesting relatively thin or sandy confining units in these general locations. Because water from surficial aquifers is inferior in quality and more susceptible to contamination than water in the deeper aquifers, high rates of leakage to the Memphis aquifer may be cause for concern. A significant component of flow (12 percent) discharging from the Fort Pillow aquifer was calculated as upward leakage to the Memphis aquifer. This upward leakage was generally limited to areas near major pumping centers in the Memphis aquifer, where heads in the Memphis aquifer have been drawn significantly below heads in the Fort Pillow aquifer. Although the Fort Pillow aquifer is not capable of producing as much water as the Memphis aquifer for similar conditions, it is nonetheless a valuable resource throughout the area.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

On the effects of fuel leakage on CO production from household burners as revealed by LIF and CARS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van der Meij, C.E.; Mokhov, A.V.; Jacobs, R.A.A.M.

Measurements of the distributions of CO, OH, and temperature in flames from two commonly used, commercially available household burners are presented. The local mole fractions of CO and relative distribution of OH have been obtained using laser-induced fluorescence, while the local temperatures have, been determined by coherent anti-Stokes Raman scattering (CARS). For both burners, burning in the open air, CO formation outside the main flames has been observed and attributed to the leakage of fuel-air mixture at the edges of the flame, where the fuel is subsequently converted to CO in the boundary layer between the flame and the surroundings.more » For a rich-premixed, multiblade burner, which gives Bunsen-like flames, the CO produced by the leaking fuel appears to be oxidized by OH arising from the outer cones of adjacent flames, and burns out to low concentrations. In the case of a lean-premixed burner, the CO produced by fuel leakage remains in the cool boundary layer without adequate burnout. Possible consequences for appliance behavior are discussed.« less

The role of executive functions and theory of mind in children's prosocial lie-telling.

PubMed

Williams, Shanna; Moore, Kelsey; Crossman, Angela M; Talwar, Victoria

2016-01-01

Children's prosocial lying was examined in relation to executive functioning skills and theory of mind development. Prosocial lying was observed using a disappointing gift paradigm. Of the 79 children (ages 6-12 years) who completed the disappointing gift paradigm, 47 (59.5%) told a prosocial lie to a research assistant about liking their prize. In addition, of those children who told prosocial lies, 25 (53.2%) maintained semantic leakage control during follow-up questioning, thereby demonstrating advanced lie-telling skills. When executive functioning was examined, children who told prosocial lies were found to have significantly higher performance on measures of working memory and inhibitory control. In addition, children who lied and maintained semantic leakage control also displayed more advanced theory of mind understanding. Although children's age was not a predictor of lie-telling behavior (i.e., truthful vs. lie-teller), age was a significant predictor of semantic leakage control, with older children being more likely to maintain their lies during follow-up questioning. Copyright © 2015 Elsevier Inc. All rights reserved.

Evaluation of Information Leakage from Cryptographic Hardware via Common-Mode Current

NASA Astrophysics Data System (ADS)

Hayashi, Yu-Ichi; Homma, Naofumi; Mizuki, Takaaki; Sugawara, Takeshi; Kayano, Yoshiki; Aoki, Takafumi; Minegishi, Shigeki; Satoh, Akashi; Sone, Hideaki; Inoue, Hiroshi

This paper presents a possibility of Electromagnetic (EM) analysis against cryptographic modules outside their security boundaries. The mechanism behind the information leakage is explained from the view point of Electromagnetic Compatibility: electric fluctuation released from cryptographic modules can conduct to peripheral circuits based on ground bounce, resulting in radiation. We demonstrate the consequence of the mechanism through experiments where the ISO/IEC standard block cipher AES (Advanced Encryption Standard) is implemented on an FPGA board and EM radiations from power and communication cables are measured. Correlation Electromagnetic Analysis (CEMA) is conducted in order to evaluate the information leakage. The experimental results show that secret keys are revealed even though there are various disturbing factors such as voltage regulators and AC/DC converters between the target module and the measurement points. We also discuss information-suppression techniques as electrical-level countermeasures against such CEMAs.

Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

NASA Astrophysics Data System (ADS)

Ju, Byongsun

2005-11-01

As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3N4 phase. (3.4 bonds/atom for Si3 N4 network, 2.67 bonds/atom for SiO2 network).

30 CFR 75.301 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... solid blocks of coal or rock so that any mixing of air currents between each is limited to leakage. AMS...-warning fire detection systems using newer technology that provides equal or greater protection, as...

Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition.

PubMed

Utama, M Iqbal Bakti; Lu, Xin; Zhan, Da; Ha, Son Tung; Yuan, Yanwen; Shen, Zexiang; Xiong, Qihua

2014-11-07

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Bromstead, James; Weir, Bennett; Nelms, R. Mark; Johnson, R. Wayne; Askew, Ray

1994-01-01

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

A disposable adhesive patch for stress urinary incontinence.

PubMed

North, B B

1998-04-01

Stress urinary incontinence (SUI) affects 5 million women in the United States. Current surgical and pharmacological management options are often unsuccessful, forcing many sufferers to rely on bulky and uncomfortable sanitary protection. This study evaluated the safety, efficacy, and acceptability of a small, disposable adhesive patch designed to seal the urethral opening and prevent urine leakage. Thirty-seven women with mild-to-moderate SUI were recruited from a suburban community. Each volunteer participated in a 21-week protocol that included a 1-week qualifying period, 4-week (pretest) control period, 12-week patch-use period, and 4-week (posttest) control period. Patch efficacy was evaluated with quantitative (leakage into sanitary napkin) and qualitative (voiding diary) measures of urine leakage. Symptom questionnaires were also completed. Overall leakage was reduced by 60%, from 1.1 +/- .3 standard error of the mean (SEM) to .44 +/- .11 (SEM) grams of urine per hour. Perception of dryness, measured by voiding diaries, improved 67%, from 13.3 +/- 1.9 (SEM) to 4.3 +/- 0.9 (SEM) leakage episodes per week. Safety evaluation included peri-urethral cytology, urinalysis and urine culture, and vaginal cultures. All measures were unaffected by 3 months of patch use. Acceptability was assessed with questionnaires that measured the impact of patch use on activities of daily living and overall quality of life. Women reported a significant improvement in both measures. All but one volunteer found that the patch was comfortable and were able to place it correctly between the inner labia with written instructions only. The disposable patch significantly reduced urine leakage resulting from SUI in community-based women. Dryness improved significantly, both by measurement of actual leakage and by the subject's perception of dryness. The maturation index of the vestibular tissues showed an increase in the number of superficial cells during patch use. Otherwise, there were no significant changes in vulvar tissues, urine composition, or microbial flora (in vaginal and urine samples). Volunteers reported that the patch improved their overall quality of life.

A new lifetime estimation model for a quicker LED reliability prediction

NASA Astrophysics Data System (ADS)

Hamon, B. H.; Mendizabal, L.; Feuillet, G.; Gasse, A.; Bataillou, B.

2014-09-01

LED reliability and lifetime prediction is a key point for Solid State Lighting adoption. For this purpose, one hundred and fifty LEDs have been aged for a reliability analysis. LEDs have been grouped following nine current-temperature stress conditions. Stress driving current was fixed between 350mA and 1A and ambient temperature between 85C and 120°C. Using integrating sphere and I(V) measurements, a cross study of the evolution of electrical and optical characteristics has been done. Results show two main failure mechanisms regarding lumen maintenance. The first one is the typically observed lumen depreciation and the second one is a much more quicker depreciation related to an increase of the leakage and non radiative currents. Models of the typical lumen depreciation and leakage resistance depreciation have been made using electrical and optical measurements during the aging tests. The combination of those models allows a new method toward a quicker LED lifetime prediction. These two models have been used for lifetime predictions for LEDs.

Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2014-08-04

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templatesmore » are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.« less

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Solar power generation system for reducing leakage current

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Hung, Chih-Yi

2018-04-01

This paper proposes a transformer-less multi-level solar power generation system. This solar power generation system is composed of a solar cell array, a boost power converter, an isolation switch set and a full-bridge inverter. A unipolar pulse-width modulation (PWM) strategy is used in the full-bridge inverter to attenuate the output ripple current. Circuit isolation is accomplished by integrating the isolation switch set between the solar cell array and the utility, to suppress the leakage current. The isolation switch set also determines the DC bus voltage for the full-bridge inverter connecting to the solar cell array or the output of the boost power converter. Accordingly, the proposed transformer-less multi-level solar power generation system generates a five-level voltage, and the partial power of the solar cell array is also converted to AC power using only the full-bridge inverter, so the power efficiency is increased. A prototype is developed to validate the performance of the proposed transformer-less multi-level solar power generation system.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

PubMed

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Topics in electrochemical degradation of photovoltaic modules

NASA Technical Reports Server (NTRS)

Mon, G. R.

1984-01-01

Electrochemical degradation of photovoltaic modules was examined. It is found that the extent of electrochemical damage is dependent on the integrated leakage current. The PV electrochemical degradation mechanisms in the two polarities are different: (1) degradation rates in the two polarities are of the same order of magnitude; (2) center tapped grounded arrays are a preferred system configuration to minimize electrochemical degradation. The use of thicker pottant layers and polymer substrate films to reduce equilibrium leakage current values is suggested. A metallized substrate layer, if used, should be isolated from the pottant and the frame by polyester layers, and EVA modules appear to be consistent with 30 year life allocation levels for electrochemical damage. Temperature acceleration factors are well behaved and moderately well understood; humidity acceleration factors vary radically with module construction and materials and require additional research.

Effects of europium content on the microstructural and ferroelectric properties of Bi4-xEuxTi3O12 thin films

NASA Astrophysics Data System (ADS)

Zheng, X. J.; He, L.; Zhou, Y. C.; Tang, M. H.

2006-12-01

The effects of europium (Eu) content on the microstructure, fatigue endurance, leakage current density, and remnant polarization (2Pr) of Bi4-xEuxTi3O12 (BET) thin films prepared by metal-organic decomposition method at 700°C annealing temperature were studied in detail. The results showed that 2Pr (82μC/cm2 under 300kV/cm), fatigue endurance (2% loss of 2Pr after 9.0×109 switching cycles), and leakage current density (1×10-8A/cm2 at 200kV/cm) of BET thin film with x =0.85 are better than those of thin films with other contents. Additionally, the mechanism concerning the dependence of ferroelectric properties on Eu content was discussed.

Relationship between Leakage Current and Pollution Deposits on the Surface of Polymeric Insulator

NASA Astrophysics Data System (ADS)

Miyake, Takuma; Seo, Yuya; Sakoda, Tatsuya; Otsubo, Masahisa

Application of polymeric materials used for housing insulators is considered. However, because polymeric insulator is organic matter, the aged deterioration is anxious. The lifetime of polymeric insulator is influenced by environmental conditions such as ultraviolet, acid rain, and polluted deposits. A change of the surface condition of polymeric material causes the dry band arc discharge and the discharge may lower the insulation strength. To investigate the relationship between insoluble pollution and occurrence of dry band arc discharge, we performed a salt-fog test with ethylene vinyl acetate (EVA) samples. The results showed that the heavy erosion caused by frequent dry band arc discharges occurred even in the case of a light polluted condition. Additionally, a very characteristic increase tendency in leakage current with a period of about 5 h was observed during the mist period.

Intensity and Compactness Enabled Saliency Estimation for Leakage Detection in Diabetic and Malarial Retinopathy.

PubMed

Zhao, Yitian; Zheng, Yalin; Liu, Yonghuai; Yang, Jian; Zhao, Yifan; Chen, Duanduan; Wang, Yongtian

2017-01-01

Leakage in retinal angiography currently is a key feature for confirming the activities of lesions in the management of a wide range of retinal diseases, such as diabetic maculopathy and paediatric malarial retinopathy. This paper proposes a new saliency-based method for the detection of leakage in fluorescein angiography. A superpixel approach is firstly employed to divide the image into meaningful patches (or superpixels) at different levels. Two saliency cues, intensity and compactness, are then proposed for the estimation of the saliency map of each individual superpixel at each level. The saliency maps at different levels over the same cues are fused using an averaging operator. The two saliency maps over different cues are fused using a pixel-wise multiplication operator. Leaking regions are finally detected by thresholding the saliency map followed by a graph-cut segmentation. The proposed method has been validated using the only two publicly available datasets: one for malarial retinopathy and the other for diabetic retinopathy. The experimental results show that it outperforms one of the latest competitors and performs as well as a human expert for leakage detection and outperforms several state-of-the-art methods for saliency detection.

Seal Investigations of an Active Clearance Control System Concept

NASA Technical Reports Server (NTRS)

Steinetz, Bruce M.; Taylor, Shawn; Oswald, Jay; DeCastro, Jonathan A.

2006-01-01

In an effort to improve upon current thermal active clearance control methods, a first generation, fast-acting mechanically actuated, active clearance control system has been designed and installed into a non-rotating test rig. In order to harvest the benefit of tighter blade tip clearances, low-leakage seals are required for the actuated carrier segments of the seal shroud to prevent excessive leakage of compressor discharge (P3) cooling air. The test rig was designed and fabricated to facilitate the evaluation of these types of seals, identify seal leakage sources, and test other active clearance control system concepts. The objective of this paper is to present both experimental and analytical investigations into the nature of the face-seal to seal-carrier interface. Finite element analyses were used to examine face seal contact pressures and edge-loading under multiple loading conditions, varied E-seal positions and two new face seal heights. The analyses indicated that moving the E-seal inward radially and reducing face seal height would lead to more uniform contact conditions between the face seal and the carriers. Lab testing confirmed that moving the balance diameter inward radially caused a decrease in overall system leakage.

Modelling of illuminated current-voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

NASA Astrophysics Data System (ADS)

Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

2014-11-01

The current-voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation-recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, Iexcess = Ir0 + K1 exp (K2 V), where Ir0, K1, and K2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2018-02-01

Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

Assessment of the risk of failure of high voltage substations due to environmental conditions and pollution on insulators.

PubMed

Castillo Sierra, Rafael; Oviedo-Trespalacios, Oscar; Candelo, John E; Soto, Jose D

2015-07-01

Pollution on electrical insulators is one of the greatest causes of failure of substations subjected to high levels of salinity and environmental pollution. Considering leakage current as the main indicator of pollution on insulators, this paper focuses on establishing the effect of the environmental conditions on the risk of failure due to pollution on insulators and determining the significant change in the magnitude of the pollution on the insulators during dry and humid periods. Hierarchical segmentation analysis was used to establish the effect of environmental conditions on the risk of failure due to pollution on insulators. The Kruskal-Wallis test was utilized to determine the significant changes in the magnitude of the pollution due to climate periods. An important result was the discovery that leakage current was more common on insulators during dry periods than humid ones. There was also a higher risk of failure due to pollution during dry periods. During the humid period, various temperatures and wind directions produced a small change in the risk of failure. As a technical result, operators of electrical substations can now identify the cause of an increase in risk of failure due to pollution in the area. The research provides a contribution towards the behaviour of the leakage current under conditions similar to those of the Colombian Caribbean coast and how they affect the risk of failure of the substation due to pollution.

Theory versus experiment for the rotordynamic coefficients of annular gas seals. I - Test facility and apparatus

NASA Technical Reports Server (NTRS)

Childs, D. W.; Nelson, C. E.; Nicks, C.; Scharrer, J.; Elrod, D.

1985-01-01

A facility and apparatus are described for determining the rotordynamic coefficients and leakage characteristics of annular gas seals. The coefficients and leakage characteristics of annular gas seals. The apparatus has a current top speed of 8000 cpm with a nominal seal diameter of 15.24 cmn (6 in.). The air supply unit yields a seal pressure ratio of approximately 7. An external shaker is used to excite the test rotor. The capability to independently calculate all rotordynamic coefficients at a given operating condition with one excitation frequency are discussed.

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors.

PubMed

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L; Banyai, Douglas; Savaikar, Madhusudan A; Jaszczak, John A; Yap, Yoke Khin

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

NASA Technical Reports Server (NTRS)

Kuhlman, G. J.

1979-01-01

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

A neighbor pixel communication filtering structure for Dynamic Vision Sensors

NASA Astrophysics Data System (ADS)

Xu, Yuan; Liu, Shiqi; Lu, Hehui; Zhang, Zilong

2017-02-01

For Dynamic Vision Sensors (DVS), thermal noise and junction leakage current induced Background Activity (BA) is the major cause of the deterioration of images quality. Inspired by the smoothing filtering principle of horizontal cells in vertebrate retina, A DVS pixel with Neighbor Pixel Communication (NPC) filtering structure is proposed to solve this issue. The NPC structure is designed to judge the validity of pixel's activity through the communication between its 4 adjacent pixels. The pixel's outputs will be suppressed if its activities are determined not real. The proposed pixel's area is 23.76×24.71μm2 and only 3ns output latency is introduced. In order to validate the effectiveness of the structure, a 5×5 pixel array has been implemented in SMIC 0.13μm CIS process. 3 test cases of array's behavioral model show that the NPC-DVS have an ability of filtering the BA.

Mechanics of Re-Torquing in Bolted Flange Connections

NASA Technical Reports Server (NTRS)

Gordon, Ali P.; Drilling Brian; Weichman, Kyle; Kammerer, Catherine; Baldwin, Frank

2010-01-01

It has been widely accepted that the phenomenon of time-dependent loosening of flange connections is a strong consequence of the viscous nature of the compression seal material. Characterizing the coupled interaction between gasket creep and elastic bolt stiffness has been useful in predicting conditions that facilitate leakage. Prior advances on this sub-class of bolted joints has lead to the development of (1) constitutive models for elastomerics, (2) initial tightening strategies, (3) etc. The effect of re-torque, which is a major consideration for typical bolted flange seals used on the Space Shuttle fleet, has not been fully characterized, however. The current study presents a systematic approach to characterizing bolted joint behavior as the consequence of sequentially applied torques. Based on exprimenta1 and numerical results, the optimal re-torquing parameters have been identified that allow for the negligible load loss after pre-load application

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Koteswara Rao, K. S. R.

2018-02-01

In this work, we have fabricated low-temperature sol-gel spin-coated and oxygen (O2) plasma treated ZrO2 thin film-based metal-insulator-semiconductor devices. To understand the impact of plasma treatment on the Si/ZrO2 interface, deep level transient spectroscopy measurements were performed. It is reported that the interface state density ( D it) comes down to 7.1 × 1010 eV-1 cm-2 from 4 × 1011 eV-1 cm-2, after plasma treatment. The reduction in D it is around five times and can be attributed to the passivation of oxygen vacancies near the Si/ZrO2 interface, as they try to relocate near the interface. The energy level position ( E T) of interfacial traps is estimated to be 0.36 eV below the conduction band edge. The untreated ZrO2 film displayed poor leakage behavior due to the presence of several traps within the film and at the interface; O2 plasma treated films show improved leakage current density as they have been reduced from 5.4 × 10-8 A/cm2 to 1.98 × 10-9 A/cm2 for gate injection mode and 6.4 × 10-8 A/cm2 to 6.3 × 10-10 A/cm2 for substrate injection mode at 1 V. Hence, we suggest that plasma treatment might be useful in future device fabrication technology.

Acamprosate {monocalcium bis(3-acetamidopropane-1-sulfonate)} reduces ethanol-drinking behavior in rats and glutamate-induced toxicity in ethanol-exposed primary rat cortical neuronal cultures.

PubMed

Oka, Michiko; Hirouchi, Masaaki; Tamura, Masaru; Sugahara, Seishi; Oyama, Tatsuya

2013-10-15

Acamprosate, the calcium salt of bis(3-acetamidopropane-1-sulfonate), contributes to the maintenance of abstinence in alcohol-dependent patients, but its mechanism of action in the central nervous system is unclear. Here, we report the effect of acamprosate on ethanol-drinking behavior in standard laboratory Wistar rats, including voluntary ethanol consumption and the ethanol-deprivation effect. After forced ethanol consumption arranged by the provision of only one drinking bottle containing 10% ethanol, the rats were given a choice between two drinking bottles, one containing water and the other containing 10% ethanol. In rats selected for high ethanol preference, repeated oral administration of acamprosate diminished voluntary ethanol drinking. After three months of continuous access to two bottles, rats were deprived of ethanol for three days and then presented with two bottles again. After ethanol deprivation, ethanol preference was increased, and the increase was largely abolished by acamprosate. After exposure of primary neuronal cultures of rat cerebral cortex to ethanol for four days, neurotoxicity, as measured by the extracellular leakage of lactate dehydrogenase (LDH), was induced by incubation with glutamate for 1h followed by incubation in the absence of ethanol for 24h. The N-methyl-D-aspartate receptor blocker 5-methyl-10,11-dihydro-5H-dibenzo[a,d]-cyclohepten-5,10-imine, the metabotropic glutamate receptor subtype 5 antagonist 6-methyl-2-(phenylethynyl)pyridine and the voltage-gated calcium-channel blocker nifedipine all inhibited glutamate-induced LDH leakage from ethanol-exposed neurons. Acamprosate inhibited the glutamate-induced LDH leakage from ethanol-exposed neurons more strongly than that from intact neurons. In conclusion, acamprosate showed effective reduction of drinking behavior in rats and protected ethanol-exposed neurons by multiple blocking of glutamate signaling. © 2013 Elsevier B.V. All rights reserved.

Self-limiting advection caused by the development of a dissolution/precipitation zone and implications for the fate of leaky wells in CO2 sequestration

NASA Astrophysics Data System (ADS)

Huerta, N. J.; Hesse, M. A.; Bryant, S. L.; Strazisar, B. R.

2013-12-01

Leaking wells that penetrate a geologic CO2 sequestration site provide a potential direct pathway for the escape of CO2 to an overlying aquifer or even back into the atmosphere. Leakage is a highly coupled system, involving transport of CO2-saturated brine and reaction of carbonic acid with the cement that encases wells. Carbonic acid attacks cement phases to dissolve calcium rich components and raise the fluid pH. Our experiments show that total dissolution of the cement matrix, which would lead to self-enhancing leakage, is prevented by an amorphous aluminosilicate phase that remains after dissolution to constrain fluid flux. Conversely, self-limiting behavior develops in a zone where pH is sufficiently high for carbonate minerals to become insoluble and precipitate. Extrapolation of these bench-scale observations indicates that a barrier of carbonate precipitation would develop as more CO2-saturated brine leaks along a well. The process of sealing of the pathway and the timescale of sealing are critical for any risk assessment of the sequestration operation. Using numerical models to interpret the experiments, we find a lag in self-limiting behavior which is controlled by the saturation state of carbonate phases. Sufficient residence time is crucial for the development of the precipitation zone. Precipitation need not seal uniformly across an entire fracture, only in dominant flow paths. Simply growing the width of a zone of precipitation is insufficient to capture the self-limiting behavior we observe in experiments. To seal, the precipitating material must also accumulate and grow into the open fracture space and close the aperture. Closure rate is a function of the initial leak path conductivity, pressure differential (which controls fluid flux), leak path length, and CO2-saturation in the brine. Combining these results with risk assessment tools that incorporate the well development history will give stakeholders a tool to quantitatively predict well leakage for candidate sites.

Investigation of electrolyte leaching in the performance degradation of phosphoric acid-doped polybenzimidazole membrane-based high temperature fuel cells

NASA Astrophysics Data System (ADS)

Jeong, Yeon Hun; Oh, Kyeongmin; Ahn, Sungha; Kim, Na Young; Byeon, Ayeong; Park, Hee-Young; Lee, So Young; Park, Hyun S.; Yoo, Sung Jong; Jang, Jong Hyun; Kim, Hyoung-Juhn; Ju, Hyunchul; Kim, Jin Young

2017-09-01

Precise monitoring of electrolyte leaching in high-temperature polymer electrolyte membrane fuel cell (HT-PEMFC) devices during lifetime tests is helpful in making a diagnosis of their quality changes and analyzing their electrochemical performance degradation. Here, we investigate electrolyte leaching in the performance degradation of phosphoric acid (PA)-doped polybenzimidazole (PBI) membrane-based HT-PEMFCs. We first perform quantitative analyses to measure PA leakage during cell operation by spectrophotometric means, and a higher PA leakage rate is detected when the current density is elevated in the cell. Second, long-term degradation tests under various current densities of the cells and electrochemical impedance spectroscopy (EIS) analysis are performed to examine the influence of PA loss on the membrane and electrodes during cell performance degradation. The combined results indicate that PA leakage affect cell performance durability, mostly due to an increase in charge transfer resistance and a decrease in the electrochemical surface area (ECSA) of the electrodes. Additionally, a three-dimensional (3-D) HT-PEMFC model is applied to a real-scale experimental cell, and is successfully validated against the polarization curves measured during various long-term experiments. The simulation results highlight that the PA loss from the cathode catalyst layer (CL) is a significant contributor to overall performance degradation.

Accurate electrical prediction of memory array through SEM-based edge-contour extraction using SPICE simulation

NASA Astrophysics Data System (ADS)

Shauly, Eitan; Rotstein, Israel; Peltinov, Ram; Latinski, Sergei; Adan, Ofer; Levi, Shimon; Menadeva, Ovadya

2009-03-01

The continues transistors scaling efforts, for smaller devices, similar (or larger) drive current/um and faster devices, increase the challenge to predict and to control the transistor off-state current. Typically, electrical simulators like SPICE, are using the design intent (as-drawn GDS data). At more sophisticated cases, the simulators are fed with the pattern after lithography and etch process simulations. As the importance of electrical simulation accuracy is increasing and leakage is becoming more dominant, there is a need to feed these simulators, with more accurate information extracted from physical on-silicon transistors. Our methodology to predict changes in device performances due to systematic lithography and etch effects was used in this paper. In general, the methodology consists on using the OPCCmaxTM for systematic Edge-Contour-Extraction (ECE) from transistors, taking along the manufacturing and includes any image distortions like line-end shortening, corner rounding and line-edge roughness. These measurements are used for SPICE modeling. Possible application of this new metrology is to provide a-head of time, physical and electrical statistical data improving time to market. In this work, we applied our methodology to analyze a small and large array's of 2.14um2 6T-SRAM, manufactured using Tower Standard Logic for General Purposes Platform. 4 out of the 6 transistors used "U-Shape AA", known to have higher variability. The predicted electrical performances of the transistors drive current and leakage current, in terms of nominal values and variability are presented. We also used the methodology to analyze an entire SRAM Block array. Study of an isolation leakage and variability are presented.

Mitigation of PID in commercial PV modules using current interruption method

NASA Astrophysics Data System (ADS)

Bora, Birinchi; Oh, Jaewon; Tatapudi, Sai; Sastry, Oruganty S.; Kumar, Rajesh; Prasad, Basudev; Tamizhmani, Govindasamy

2017-08-01

Potential-induced degradation (PID) is known to have a very severe effect on the reliability of PV modules. PID is caused due to the leakage of current from the cell circuit to the grounded frame under humid conditions of high voltage photovoltaic (PV) systems. There are multiple paths for the current leakage. The most dominant leakage path is from the cell to the frame through encapsulant, glass bulk and glass surface. This dominant path can be prevented by interrupting the electrical conductivity at the glass surface. In our previous works related to this topic, we demonstrated the effectiveness of glass surface conductivity interruption technique using one-cell PV coupons. In this work, we demonstrate the effectiveness of this technique using a full size commercial module susceptible to PID. The interruption of surface conductivity of the commercial module was achieved by attaching a narrow, thin flexible glass strips, from Corning, called Willow Glass on the glass surface along the inner edges of the frame. The flexible glass strip was attached to the module glass surface by heating the glass strip with an ionomer adhesive underneath using a handheld heat gun. The PID stress test was performed at 60°C and 85% RH for 96 hours at -600 V. Pre- and post-PID characterizations including I-V and electroluminescence were carried out to determine the performance loss and affected cell areas. This work demonstrates that the PID issue can be effectively addressed by using this current interruption technique. An important benefit of this approach is that this interruption technique can be applied after manufacturing the modules and after installing the modules in the field as well.

Assessing the greenhouse impact of natural gas

NASA Astrophysics Data System (ADS)

Cathles, L. M.

2012-06-01

The global warming impact of substituting natural gas for coal and oil is currently in debate. We address this question here by comparing the reduction of greenhouse warming that would result from substituting gas for coal and some oil to the reduction which could be achieved by instead substituting zero carbon energy sources. We show that substitution of natural gas reduces global warming by 40% of that which could be attained by the substitution of zero carbon energy sources. At methane leakage rates that are ˜1% of production, which is similar to today's probable leakage rate of ˜1.5% of production, the 40% benefit is realized as gas substitution occurs. For short transitions the leakage rate must be more than 10 to 15% of production for gas substitution not to reduce warming, and for longer transitions the leakage must be much greater. But even if the leakage was so high that the substitution was not of immediate benefit, the 40%-of-zero-carbon benefit would be realized shortly after methane emissions ceased because methane is removed quickly from the atmosphere whereas CO2 is not. The benefits of substitution are unaffected by heat exchange to the ocean. CO2 emissions are the key to anthropogenic climate change, and substituting gas reduces them by 40% of that possible by conversion to zero carbon energy sources. Gas substitution also reduces the rate at which zero carbon energy sources must eventually be introduced.

Design Study of Wafer Seals for Future Hypersonic Vehicles

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H.; Finkbeiner, Joshua R.; Steinetz, Bruce M.; DeMange, Jeffrey J.

2005-01-01

Future hypersonic vehicles require high temperature, dynamic seals in advanced hypersonic engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Current seals do not meet the demanding requirements of these applications, so NASA Glenn Research Center is developing improved designs to overcome these shortfalls. An advanced ceramic wafer seal design has shown promise in meeting these needs. Results from a design of experiments study performed on this seal revealed that several installation variables played a role in determining the amount of leakage past the seals. Lower leakage rates were achieved by using a tighter groove width around the seals, a higher seal preload, a tighter wafer height tolerance, and a looser groove length. During flow testing, a seal activating pressure acting behind the wafers combined with simulated vibrations to seat the seals more effectively against the sealing surface and produce lower leakage rates. A seal geometry study revealed comparable leakage for full-scale wafers with 0.125 and 0.25 in. thicknesses. For applications in which lower part counts are desired, fewer 0.25-in.-thick wafers may be able to be used in place of 0.125-in.-thick wafers while achieving similar performance. Tests performed on wafers with a rounded edge (0.5 in. radius) in contact with the sealing surface resulted in flow rates twice as high as those for wafers with a flat edge. Half-size wafers had leakage rates approximately three times higher than those for full-size wafers.

Defunctioning ileostomy reduces leakage rate in rectal cancer surgery - systematic review and meta-analysis.

PubMed

Pisarska, Magdalena; Gajewska, Natalia; Małczak, Piotr; Wysocki, Michał; Witowski, Jan; Torbicz, Grzegorz; Major, Piotr; Mizera, Magdalena; Dembiński, Marcin; Migaczewski, Marcin; Budzyński, Andrzej; Pędziwiatr, Michał

2018-04-17

The role of a defunctioning ileostomy in every anterior rectal resection with total mesorectal excision (TME) is still controversial. In this study, we aimed to review the current literature to determine the impact of ileostomy creation on postoperative outcomes in patients undergoing anterior rectal resection with TME. MEDLINE, Embase and Cochrane Library were searched for eligible studies. We analyzed data up to October 2017. Eligible studies had to compare patients with vs. without a defunctioning ileostomy in rectal cancer surgery and comprise data on anastomotic leakage in both groups. The primary outcome was anastomotic leakage. Secondary outcomes included the complication rate, mortality, reoperation rate, length of hospital stay and 30-day readmission. Initial search yielded 1,966 articles. Thorough evaluation resulted in 13 eligible articles which were analyzed. Leakage rate (RR = 0.43, 95% CI 0.28-0.67) and the number of reoperations (RR = 0.62, 95% CI 0.40-0.94) were significantly lower in the defunctioning stoma group. Morbidity was significantly higher in the stoma group (RR = 1.32, 95% CI 1.05-1.65). Analysis of mortality, length of hospital stay and readmission rate did not show any significant differences. A defunctioning ileostomy may decrease the anastomotic leakage rate, additionally significantly reducing the risk of reoperations but it may also increase the overall complication rate. The presence of the protective stoma has no effect on mortality, length of hospital stay and readmission rate.

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

PubMed Central

Song, Mingxia; Stolz, Arnaud; Zhang, Douguo; Arocas, Juan; Markey, Laurent; Colas des Francs, Gérard; Dujardin, Erik; Bouhelier, Alexandre

2013-01-01

Plasmonics is an emerging technology capable of simultaneously transporting a plasmonic signal and an electronic signal on the same information support1,2,3. In this context, metal nanowires are especially desirable for realizing dense routing networks4. A prerequisite to operate such shared nanowire-based platform relies on our ability to electrically contact individual metal nanowires and efficiently excite surface plasmon polaritons5 in this information support. In this article, we describe a protocol to bring electrical terminals to chemically-synthesized silver nanowires6 randomly distributed on a glass substrate7. The positions of the nanowire ends with respect to predefined landmarks are precisely located using standard optical transmission microscopy before encapsulation in an electron-sensitive resist. Trenches representing the electrode layout are subsequently designed by electron-beam lithography. Metal electrodes are then fabricated by thermally evaporating a Cr/Au layer followed by a chemical lift-off. The contacted silver nanowires are finally transferred to a leakage radiation microscope for surface plasmon excitation and characterization8,9. Surface plasmons are launched in the nanowires by focusing a near infrared laser beam on a diffraction-limited spot overlapping one nanowire extremity5,9. For sufficiently large nanowires, the surface plasmon mode leaks into the glass substrate9,10. This leakage radiation is readily detected, imaged, and analyzed in the different conjugate planes in leakage radiation microscopy9,11. The electrical terminals do not affect the plasmon propagation. However, a current-induced morphological deterioration of the nanowire drastically degrades the flow of surface plasmons. The combination of surface plasmon leakage radiation microscopy with a simultaneous analysis of the nanowire electrical transport characteristics reveals the intrinsic limitations of such plasmonic circuitry. PMID:24378340

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Ballarin, Roberto

The aim of this document is to study the effect of radiation damage on the silicon sensors. The reflection of the effect of radiation can be observed in two fundamental parameters of the detector: the bias current and the bias voltage. The leakage current directly affects the noise, while the bias voltage is required to collect the maximum signal deposited by the charged particle.

The effects of free stream turbulence on the flow field through a compressor cascade

NASA Astrophysics Data System (ADS)

Muthanna Kolera, Chittiappa

The flow through a compressor cascade with tip leakage has been studied experimentally. The cascade of GE rotor B section blades had an inlet angle of 65.1°, a stagger angle of 56.9°, and a solidity of 1.08. The final turning angle of the cascade was 11.8°. This compressor configuration was representative of the core compressor of an aircraft engine. The cascade was operated with a tip gap of 1.65%, and operated at a Reynolds number based on the chord length (0.254 m) of 388,000. Measurements were made at 8 axial locations to reveal the structure of the flow as it evolved through the cascade. Measurements were also made to reveal the effects of grid generated turbulence on this flow. The data set is unique in that not only does it give a comparison of elevated free stream turbulence effects, but also documents the developing flow through the blade row of a compressor cascade with tip leakage. Measurements were made at a total of 8 locations 0.8, 0.23 axial chords upstream and 0, 0.27, 0.48, 0.77, 0.98, and 1.26 axial chords downstream of the leading edge of the blade row for both inflow turbulence cases. The measurements revealed the formation and development of the tip leakage vortex within the passage. The tip leakage vortex becomes apparent at approximately X/ca = 0.27 and dominated much of the endwall flow. The tip leakage vortex is characterized by high streamwise velocity deficits, high vorticity and high turbulence kinetic energy levels. The result showed that between 0.77 and 0.98 axial chords downstream of the leading edge, the vortex structure and behavior changes. The effects of grid generated turbulence were also documented. The results revealed significant effects on the flow field. The results showed a 4% decrease in the blade loading and a 20% reduction in the vorticity levels within tip leakage vortex. There was also a shift in the vortex path, showing a shift close to the suction side with grid generated turbulence, indicating the strength of the vortex was decreased. Circulation calculations showed this reduction, and also indicated that the tip leakage vortex increased in size by about 30%. The results revealed that overall, the turbulence kinetic energy levels in the tip leakage vortex were increased, with the most drastic change occurring at X/ca = 0.77.

Low-order aberration sensitivity of eighth-order coronagraph masks

NASA Technical Reports Server (NTRS)

Shaklan, Stuart B.; Green, Joseph J.

2005-01-01

In a recent paper, Kuchner, Crepp, and Ge describe new image-plane coronagraph mask designs that reject to eighth order the leakage of starlight caused by image motion at the mask, resulting in a substantial relaxation of image centroiding requirements compared to previous fourth-order and second-order masks. They also suggest that the new masks are effective at rejecting leakage caused by low-order aberrations (e.g., focus, coma, and astigmatism). In this paper, we derive the sensitivity of eighth-order masks to aberrations of any order and provide simulations of coronagraph behavior in the presence of optical aberrations.We find that the masks leak light as the fourth power of focus, astigmatism, coma, and trefoil. This has tremendous performance advantages for the Terrestrial Planet Finder Coronagraph.

Behavior of a nuclear steel containment equipment hatch at large strain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fanous, F.; Greimann, L.

1988-05-01

During a severe accident, buckling of a steel containment hatch door, large deformation and ovaling of the hatch sleeve are potential causes of mismatch at the sealing surface which can result in a leakage path. A three-dimensional nonlinear finite element analysis of a typical steel containment/sleeve/hatch assembly that includes containment stiffeners, pretensioned swing bolts, and hatch door geometric imperfection is presented. The analysis was carried out to the nonlinear range up to large strains. The results indicated that the buckling load occurs at pressure, far above that which causes gross yielding of the shell plate. Although buckling of the hatchmore » door increased the relative motions of the hatch sleeve and the hatch door, the motions remained sufficiently small to prevent leakage.« less

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

NASA Astrophysics Data System (ADS)

Liu, Po-Tsun; Tsai, T. M.; Chang, T. C.

2005-05-01

This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150°C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.

Structural, dielectric and impedance characteristics of lanthanum-modified BiFeO3-PbTiO3 electronic system

NASA Astrophysics Data System (ADS)

Pradhan, S. K.; Das, S. N.; Bhuyan, S.; Behera, C.; Padhee, R.; Choudhary, R. N. P.

2016-06-01

A lanthanum-modified BiFeO3-PbTiO3 binary electronic system has been fabricated by a high-temperature solid-state reaction technique. The structural, dielectric and electrical properties of a single phase of multicomponent system are investigated to understand its ferroelectrics as well as relaxation behavior. The X-ray diffraction structural analysis substantiates the formation of a new stable phase of tetragonal system (with a large c/a ratio 1.23) without any trace of impurity phase. The electrical behavior of the processed material is characterized through impedance spectroscopy in a wide frequency range (1 kHz-1 MHz) over a temperature range of 25-500 °C. It is observed that the substitution of lanthanum-modified PbTiO3 (PT) into BiFeO3 (BFO) reveals enviable multiferroic property which is evident from the ME coefficient measurement and ferroelectric loop. It also reduces the electrical leakage current or tangent loss. The ac conductivity of the solid solution increases with increase in frequency in the low-temperature region. The impedance spectroscopy of the synthesized material reflects the dielectric relaxation of non-Debye type.

Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Gee, Russell C.; Fossum, Eric R.; Baier, Steven M.

1993-01-01

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

PubMed

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment

NASA Astrophysics Data System (ADS)

Shih, Wen-Chieh; Kang, Kun-Yung; Lee, Joseph Ya-Min

2007-11-01

Metal-ferroelectric-insulator-semiconductor transistors (MFISFETs) and capacitors with the structure of Al /Pb (Zr0.53,Ti0.47) O3/ZrO2/Si were fabricated. The wafers were pretreated with H2O2 before ZrO2 deposition and/or post-treated with HCl after ZrO2 deposition. The leakage current density at 5V is reduced from 10-1to5×10-6A /cm2. The subthreshold slope was improved to 91mV/decade. The MFISFETs maintain a threshold voltage window of about 1.1V after an elapsed time of 3000s. The mobility is 267cm2/Vs. The improvements are most likely due to the reduction of interfacial layer thickness and the interface states at the ZrO2/Si interface.

Effect of high-pressure H{sub 2}O treatment on elimination of interfacial GeO{sub X} layer between ZrO{sub 2} and Ge stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Chen-Shuo; Liu, Po-Tsun

2011-08-22

This investigation demonstrates the effect of high-pressure H{sub 2}O treatment on the elimination of the interfacial germanium suboxide (GeO{sub X}) layer between ZrO{sub 2} and Ge. The formation of GeO{sub X} interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H{sub 2}O treatment eliminates the interfacial GeO{sub X} layer. The physical mechanism involves the oxidation of non-oxidized Zr with H{sub 2}O and the reduction of GeO{sub X} by H{sub 2}. Treatment with H{sub 2}O reduces the gate-leakage current of a ZrO{submore » 2}/Ge capacitor by a factor of 1000.« less

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

NASA Astrophysics Data System (ADS)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

NASA Astrophysics Data System (ADS)

Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.

2009-11-01

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

A comparison of lightning and nuclear electromagnetic pulse response of tactical shelters

NASA Technical Reports Server (NTRS)

Perala, R. A.; Rudolph, T. H.; Mckenna, P. M.

1984-01-01

The internal response (electromagnetic fields and cable responses) of tactical shelters is addressed. Tactical shelters are usually well-shielded systems. Apart from penetrations by signal and power lines, the main leakage paths to the interior are via seams and the environment control unit (ECU) honeycomb filter. The time domain in three-dimensional finite-difference technique is employed to determine the external and internal coupling to a shelter excited by nuclear electromagnetic pulses (NEMP) and attached lightning. The responses of interest are the internal electromagnetic fields and the voltage, current, power, and energy coupled to internal cables. Leakage through the seams and ECU filter is accomplished by their transfer impedances which relate internal electric fields to external current densities. Transfer impedances which were experimentally measured are used in the analysis. The internal numerical results are favorably compared to actual shelter test data under simulated NEMP illumination.

Development of a low-noise, 4th-order readout ASIC for CdZnTe detectors in gamma spectrometer applications

NASA Astrophysics Data System (ADS)

Wang, Jia; Su, Lin; Wei, Xiaomin; Zheng, Ran; Hu, Yann

2016-09-01

This paper presents an ASIC readout circuit development, which aims to achieve low noise. In order to compensate the leakage current and improve gain, a dual-stage CSA has been utilized. A 4th-order high-linearity shaper is proposed to obtain a Semi-Gaussian wave and further decrease the noise induced by the leakage current. The ASIC has been designed and fabricated in a standard commercial 2P4M 0.35 μm CMOS process. Die area of one channel is about 1190 μm×147 μm. The input charge range is 1.8 fC. The peaking time can be adjusted from 1 μs to 3 μs. Measured ENC is about 55e- (rms) at input capacitor of 0 F. The gain is 271 mV/fC at the peaking time of 1 μs.

Zirconium doped TiO{sub 2} thin films: A promising dielectric layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Arvind; Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in; Rao, K. S. R. Koteswara

2016-05-06

In the present work, we have fabricated the zirconium doped TiO{sub 2} thin (ZTO) films from a facile spin – coating method. The addition of Zirconium in TiO{sub 2} offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO{sub 2} thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ∼10{sup −8} A/cm{sup 2}. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compactmore » and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.« less

4H-SiC UV Photo Detector with Large Area and Very High Specific Detectivity

NASA Technical Reports Server (NTRS)

Yan, Feng; Shahid, Aslam; Franz, David; Xin, Xiaobin; Zhao, Jian H.; Zhao, Yuegang; Winer, Maurice

2004-01-01

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 sq cm. The I-V characteristics and photo-response spectra have been measured and analyzed. For a 5 mm x 5 mm area device leakage current of 1 x 10(exp 15)A at zero bias and 1.2 x 10(exp 14)A at -IV have been established. The quantum efficiency is over 30% from 240nm to 320nm. The specific detectivity, D(sup *), has been calculated from the directly measured leakage current and quantum efficiency data and are shown to be higher than 10(exp 15) cmHz(sup 1/2)/W from 210nm to 350nm with a peak D(sup *) of 3.6 x 10(exp 15)cmH(sup 1/2)/W at 300nm.

Low-loss hollow-core silica fibers with adjacent nested anti-resonant tubes.

PubMed

Habib, Md Selim; Bang, Ole; Bache, Morten

2015-06-29

We report on numerical design optimization of hollow-core anti-resonant fibers with the aim of reducing transmission losses. We show that re-arranging the nested anti-resonant tubes in the cladding to be adjacent has the effect of significantly reducing leakage as well as bending losses, and for reaching high loss extinction ratios between the fundamental mode and higher order modes. We investigate two versions of the proposed design, one optimized for the mid-IR and another scaled down version for the near-IR and compare them in detail with previously proposed anti-resonant fiber designs including nested elements. Our proposed design is superior with respect to obtaining the lowest leakage losses and the bend losses are also much lower than for the previous designs. Leakage losses as low as 0.0015 dB/km and bending losses of 0.006 dB/km at 5 cm bending radius are predicted at the ytterbium lasing wavelength 1.06 µm. When optimizing the higher-order-mode extinction ratio, the low leakage loss is sacrificed to get an effective single-mode behavior of the fiber. We show that the higher-order-mode extinction ratio is more than 1500 in the range 1.0-1.1 µm around the ytterbium lasing wavelength, while in the mid-IR it can be over 100 around λ = 2.94 μm. This is higher than the previously considered structures in the literature using nested tubes.

Influence of different restorative techniques on marginal seal of class II composite restorations

PubMed Central

RODRIGUES JUNIOR, Sinval Adalberto; PIN, Lúcio Fernando da Silva; MACHADO, Giovanna; DELLA BONA, Álvaro; DEMARCO, Flávio Fernando

2010-01-01

Objective To evaluate the gingival marginal seal in class II composite restorations using different restorative techniques. Material and Methods Class II box cavities were prepared in both proximal faces of 32 sound human third molars with gingival margins located in either enamel or dentin/cementum. Restorations were performed as follows: G1 (control): composite, conventional light curing technique; G2: composite, soft-start technique; G3: amalgam/composite association (amalcomp); and G4: resin-modified glass ionomer cement/ composite, open sandwich technique. The restored specimens were thermocycled. Epoxy resin replicas were made and coated for scanning electron microscopy examination. For microleakage evaluation, teeth were coated with nail polish and immersed in dye solution. Teeth were cut in 3 slices and dye penetration was recorded (mm), digitized and analyzed with Image Tool software. Microleakage data were analyzed statistically by non-parametric Kruskal-Wallis and Mann-Whitney tests. Results Leakage in enamel was lower than in dentin (p<0.001). G2 exhibited the lowest leakage values (p<0.05) in enamel margins, with no differences between the other groups. In dentin margins, groups G1 and G2 had similar behavior and both showed less leakage (p<0.05) than groups G3 and G4. SEM micrographs revealed different marginal adaptation patterns for the different techniques and for the different substrates. Conclusion The soft-start technique showed no leakage in enamel margins and produced similar values to those of the conventional (control) technique for dentin margins. PMID:20379680

Influence of different types of seals on the stability behavior of turbopumps

NASA Technical Reports Server (NTRS)

Diewald, W.; Nordmann, R.

1989-01-01

One of the main problems in designing a centrifugal pump is to achieve a good efficiency while not neglecting the dynamic performance of the machine. The first aspect leads to the design of grooved seals in order to minimize the leakage flow. But the influence of these grooves to the dynamic behavior is not well known. Experimental and theoretical results of the rotordynamic coefficients for different groove shapes and depths in seals is presented. In addition, the coefficients are applied to a simple pump model.

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

NASA Astrophysics Data System (ADS)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Contribution of ethylenetetrafluoroethylene (ETFE) insulation to the electrical performance of Riata® silicone leads having externalized conductors.

PubMed

Fischer, Avi; Klehn, Russell

2013-08-01

The insulation of St. Jude Medical Riata® leads contains a polytetrafluoroethylene (PTFE) liner, silicone tubing, and ethylenetetrafluoroethylene (ETFE) coating on individual cable conductors. ETFE has sufficient dielectric strength to assure electrical function. This investigation intended to analyze performance of leads with and without externalized conductors and with intact and breached ETFE. Testing was performed on ETFE-coated conductors to determine their ability to deliver high-voltage therapy. Tests were performed on samples under different conditions and current leakage was measured. A high-voltage test and a cyclic pulse test were performed, and the effect of lead modifications on the potential gradient from a high-voltage shock was used to determine functionality. Measurements from modified Riata® leads were compared with a control lead with all insulation and conducting elements intact. Current leakage for all conditions tested, was within the acceptance criteria for the high-voltage test and the cyclic pulse test. In conductors that underwent cyclic testing, the highest value of current leakage was within the limit of acceptability for both phases of the test. Testing of leads with externalized conductors and breached ETFE showed similar potential gradients compared with a control lead. Testing of ETFE-coated conductors following multiple preconditioning steps showed that ETFE serves as a redundant layer of insulation. In the event that the ETFE coating is breached, the potential gradient seen resulting from a high-voltage defibrillation shock was similar to a lead with no breach to the ETFE, even after 100 shocks.

Are there risk factors that increase the rate of staple line leakage in patients undergoing primary sleeve gastrectomy for morbid obesity?

PubMed

Benedix, Frank; Benedix, Diana D; Knoll, Christian; Weiner, Rudolf; Bruns, Christiane; Manger, Thomas; Stroh, Christine

2014-10-01

Laparoscopic sleeve gastrectomy (LSG) is currently being performed with increasing frequency worldwide. It offers an excellent weight loss and resolution of comorbidities in the short term with a very low incidence of complications. However, the ever present risk of a staple line leak is still a major concern. Since 2005, data from obese patients that undergo bariatric procedures in Germany are prospectively registered in an online database and analyzed at the Institute of Quality Assurance in Surgical Medicine. For the current analysis, all patients that had undergone primary sleeve gastrectomy for morbid obesity within a 7-year period were considered. Using the GBSR, data from 5.400 LSGs were considered for analysis. Staple line leak rate decreased during the study period from 6.5 to 1.4 %. Male gender, higher BMI, concomitant sleep apnea, conversion to laparotomy, longer operation time, use of both buttresses and oversewing, and the occurrence of intraoperative complications were associated with a significantly higher leakage rate. On multivariate analysis, operation time and year of procedure only had a significant impact on staple line leak rate. The results of the current study demonstrated that there are factors that increase the risk of a leakage which would enable surgeons to define risk groups, to more carefully select patients, and to offer a closer follow-up during the postoperative course with early recognition and adequate treatment. All future efforts should be focused on a further reduction of serious complications to make the LSG a widely accepted and safer procedure.

Irradiation study of UV Silicon Photomultipliers for the Mu2e calorimeter

NASA Astrophysics Data System (ADS)

Baccaro, S.; Cemmi, A.; Cordelli, M.; Diociaiuti, E.; Donghia, R.; Ferrari, A.; Giovannella, S.; Loreti, S.; Miscetti, S.; Müller, S.; Pillon, M.; Sarra, I.

2017-02-01

The Mu2e calorimeter is composed of 1400 un-doped CsI crystals, coupled to large area UV extended Silicon Photomultipliers (SiPMs), arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position resolutions. It should also be fast enough to handle the high rate background and it must operate and survive in the high radiation environment. Simulation studies estimated that, in the highest irradiated regions, each photo-sensor will absorb a dose of 20 krad and will be exposed to a neutron fluency of 5.5×1011n1 MeV/cm2 in three years of running, with a safety factor of 3 included. At the end of 2015, we have concluded an irradiation campaign at the Frascati Neutron Generator (FNG, Frascati, Italy) measuring the response of two different 16 array models from Hamamatsu, which differ for the protection windows and a SiPM from FBK. In 2016, we have carried out two additional irradiation campaigns with neutrons and photons at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR, Dresden, Germany) and at the Calliope gamma irradiation facility at ENEA-Casaccia, respectively. A negligible increment of the leakage current and no gain change have been observed with the dose irradiation. On the other hand, at the end of the neutron irradiation, the gain does not show large changes whilst the leakage current increases by around a factor of 2000. In these conditions, the too high leakage current makes problematic to bias the SiPMs, thus requiring to cool them down to a running temperature of ~0oC.

Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

2016-08-01

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

Impact of the Agulhas Return Current on the glacial Subantarctic region in the South Indian Ocean

NASA Astrophysics Data System (ADS)

Ikehara, M.; Crosta, X.; Manoj, M. C.

2017-12-01

The Southern Ocean has played an important role in the evolution of the global climate system. The Southern Ocean circulation is dominated by the Antarctic Circumpolar Current (ACC), the world's longest and largest current system. Sea ice coverage on sea surface strongly affects the climate of the Southern Hemisphere through its impacts on the energy and gas budget, on the atmospheric circulation, on the hydrological cycle, and on the biological productivity. The Agulhas Return Current (ARC) originates from the Agulhas Current, the major western boundary current in the Indian Ocean, and transports heat from subtropical to subantarctic region. It's thought that the Agulhas leakage from the Indian Ocean to the Atlantic was reduced for the last glacial due to a northward shift of the westerlies and ACC, however, there are still unknown yet how the ARC was responded to the reduced Agulhas leakage. A piston core DCR-1PC was collected from the Del Caño Rise (46°S, 44°E, 2632m), Indian sector of the Southern Ocean. Core site located in the Subantarctic region between the Subtropical Front (STF) and Subantarctic Front (SAF). Age model of the core was established by radiocarbon dating of planktic foraminifer Globorotalia bulloides and oxygen isotope stratigraphy of benthic foraminifers Cibicidoides wuellerstorfi and Melonis bareelanus. Sediment of DCR-1PC show the cyclic changes of diatom/carbonate ooze sedimentation corresponding to Southern Ocean fronts' migrations on glacial-interglacial timescales. Records of ice-rafted debris (IRD) and oxygen isotope in planktic foraminfer G. bulloides suggest that the melting of sea ice was significantly increased during the last glacial maximum (LGM) in the Subantarctic surface water. Diatom assemblage based summer SST also shows the relative warmer condition in the Subantarctic during the LGM. These results might be explained by the strong influence of the Agulhas Return Current during the LGM in the Subantarctic. The reduced Agulhas leakage due to a northward shift of the westerlies and ACC impacted significantly on sea ice melting in the glacial Subantarctic region in the South Indian Ocean.

Direct DC 10 V comparison between two programmable Josephson voltage standards made of niobium nitride (NbN)-based and niobium (Nb)-based Josephson junctions

NASA Astrophysics Data System (ADS)

Solve, S.; Chayramy, R.; Maruyama, M.; Urano, C.; Kaneko, N.-H.; Rüfenacht, A.

2018-04-01

BIPM’s new transportable programmable Josephson voltage standard (PJVS) has been used for an on-site comparison at the National Metrology Institute of Japan (NMIJ) and the National Institute of Advanced Industrial Science and Technology (AIST) (NMIJ/AIST, hereafter called just NMIJ unless otherwise noted). This is the first time that an array of niobium-based Josephson junctions with amorphous niobium silicon Nb x Si1-x barriers, developed by the National Institute of Standards and Technology4 (NIST), has been directly compared to an array of niobium nitride (NbN)-based junctions (developed by the NMIJ in collaboration with the Nanoelectronics Research Institute (NeRI), AIST). Nominally identical voltages produced by both systems agreed within 5 parts in 1012 (0.05 nV at 10 V) with a combined relative uncertainty of 7.9  ×  10-11 (0.79 nV). The low side of the NMIJ apparatus is, by design, referred to the ground potential. An analysis of the systematic errors due to the leakage current to ground was conducted for this ground configuration. The influence of a multi-stage low-pass filter installed at the output measurement leads of the NMIJ primary standard was also investigated. The number of capacitances in parallel in the filter and their insulation resistance have a direct impact on the amplitude of the systematic voltage error introduced by the leakage current, even if the current does not necessarily return to ground. The filtering of the output of the PJVS voltage leads has the positive consequence of protecting the array from external sources of noise. Current noise, when coupled to the array, reduces the width or current range of the quantized voltage steps. The voltage error induced by the leakage current in the filter is an order of magnitude larger than the voltage error in the absence of all filtering, even though the current range of steps is significantly decreased without filtering.

Monitoring CO2 Intrusion in shallow aquifer using complex electrical methods and a novel CO2 sensitive Lidar-based sensor

NASA Astrophysics Data System (ADS)

Leger, E.; Dafflon, B.; Thorpe, M.; Kreitinger, A.; Laura, D.; Haivala, J.; Peterson, J.; Spangler, L.; Hubbard, S. S.

2016-12-01

While subsurface storage of CO2 in geological formations offers significant potential to mitigate atmospheric greenhouse gasses, approaches are needed to monitor the efficacy of the strategy as well as possible negative consequences, such as leakage of CO2 or brine into groundwater or release of fugitive gaseous CO2. Groundwater leakages can cause subsequent reactions that may also be deleterious. For example, a release of dissolved CO2 into shallow groundwatersystems can decrease groundwater pH which can potentiallymobilize naturally occurring trace metals and ions. In this perspective, detecting and assessing potential leak requires development of novel monitoring techniques.We present the results of using surface electrical resistivity tomography (ERT) and a novel CO2 sensitive Lidar-based sensor to monitor a controlled CO2 release at the ZeroEmission Research and Technology Center (Bozeman, Montana). Soil temperature and moisture sensors, wellbore water quality measurements as well as chamber-based CO2 flux measurements were used in addition to the ERT and a novel Lidar-based sensor to detect and assess potential leakage into groundwater, vadose zone and atmosphere. The three-week release wascarried out in the vadose and the saturated zones. Well sampling of pH and conductivity and surface CO2 fluxes and concentrations measurements were acquired during the release and are compared with complex electricalresistivity time-lapse measurements. The novel Lidar-based image of the CO2 plume were compared to chamber-based CO2 flux and concentration measurements. While a continuous increase in subsurface ERT and above ground CO2 was documented, joint analysis of the above and below ground data revealed distinct transport behavior in the vadose and saturated zones. Two type of transport were observed, one in the vadoze zone, monitored by CO2 flux chamber and ERT, and the other one in the saturated zone, were ERT and wellsampling were carried. The experiment suggests how a range of geophysical, remote sensing, hydrological and geochemical measurement approaches can be optimally configured to detect the distribution and explore behavior of possible CO2 leakages in distinct compartments, including groundwater, vadose zone, and atmosphere.

An analytical solution of groundwater response to tidal fluctuation in a leaky confined aquifer

NASA Astrophysics Data System (ADS)

Jiao, Jiu Jimmy; Tang, Zhonghua

1999-03-01

An analytical solution is derived to investigate the influence of leakage on tidal response in a coastal leaky confined aquifer system. The analytical solution developed here is more general than the traditional solution obtained by Ferris [1951], which can be regarded as a special case of the solution presented in this paper. This solution is based on a conceptual model under the assumption that the groundwater level in the confined aquifer fluctuates in response to sea tide while that of the overlying unconfined aquifer remains constant. This conceptual model is supported by numerous field studies by previous researchers which have demonstrated that the tidal response in an unconfined aquifer may be negligible compared to that in a confined aquifer. The leakage has a significant impact on the tidal behavior of the confined aquifer. Hypothetical studies indicate that both tidal amplitude of groundwater head in the aquifer and the distance over which the aquifer can be disturbed by the sea tide will be considerably reduced because of the existence of leakage. This analytical solution is used to investigate the tidal and piezometer data at the Chek Lap Kok airport, Hong Kong Special Administrative Region, People's Republic of China.

Response of Nuclear Power Plant Instrumentation Cables Exposed to Fire Conditions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muna, Alice Baca; LaFleur, Chris Bensdotter; Brooks, Dusty Marie

This report presents the results of instrumentation cable tests sponsored by the US Nuclear Regulatory Commission (NRC) Office of Nuclear Regulatory Research and performed at Sandia National Laboratories (SNL). The goal of the tests was to assess thermal and electrical response behavior under fire-exposure conditions for instrumentation cables and circuits. The test objective was to assess how severe radiant heating conditions surrounding an instrumentation cable affect current or voltage signals in an instrumentation circuit. A total of thirty-nine small-scale tests were conducted. Ten different instrumentation cables were tested, ranging from one conductor to eight-twisted pairs. Because the focus of themore » tests was thermoset (TS) cables, only two of the ten cables had thermoplastic (TP) insulation and jacket material and the remaining eight cables were one of three different TS insulation and jacket material. Two instrumentation cables from previous cable fire testing were included, one TS and one TP. Three test circuits were used to simulate instrumentation circuits present in nuclear power plants: a 4–20 mA current loop, a 10–50 mA current loop and a 1–5 VDC voltage loop. A regression analysis was conducted to determine key variables affecting signal leakage time.« less

A new intelligent bed care system for hospital and home patients.

PubMed

Yonezawa, Yoshiharu; Miyamoto, Yasuaki; Maki, Hiromichi; Ogawa, Hidekuni; Ninomiya, Ishio; Sada, Kouji; Hamada, Shingo; Caldwell, W Morton

2005-01-01

An intelligent bed-care system has been developed for monitoring patient movements and behavior in the hospital and at home in order to prevent injuries from falls, a major problem in health care facilities. Falls, as well as patient activity immediately preceding falls (i.e. exiting the bed), are especially dangerous when infusion extubation also occurs. This new system detects in-bed infusion fluid leaks, bleeding due to infusion-tube pullout, and urine resulting from incontinence. It employs stainless steel tape and wire noncontacting electrodes, several linear integrated circuits, and a low-power, 8-bit single-chip microcomputer The electrodes are installed between the bed mattress and sheet to record changes in an always-present alternating current (AC) voltage, which is induced on the patient's body by electrostatic coupling from a 100-V, 60-Hz alternating current power line around the bed. The microcomputer uses changes in the induced alternating current voltage to detect the patient's movements before and after leaving the bed, as well as any fluid leakage. The microcomputer alerts the nursing station, via the nurse call system or personal handy phone (PHS), that the patient is in an active state; has a dangerous posture on the bed; is contaminating the sheet due to leaking, bleeding or incontinence; or is out of bed.

Simulating CO₂ leakages from CCS to determine Zn toxicity using the marine microalgae Pleurochrysis roscoffensis.

PubMed

Bautista-Chamizo, Esther; De Orte, Manoela Romanó; DelValls, Tomás Ángel; Riba, Inmaculada

2016-02-01

Due to the current climate change and ocean acidification, a new technology for CO2 mitigation has been proposed, the Carbon dioxide Capture and Storage (CCS). However, there is an ecological risk associated with potential CO2 leakages from the sub-seabed storages sites. To evaluate the effects related to CO2 leakages, laboratory-scales experiments were performed using the marine microalgae Pleurochrysis roscoffensis. Five Zn concentrations were tested at different pHs to study Zn toxicity under acidified conditions. Seawater was collected and submitted to acidification by means of CO2 injection and by HCl addition. Results showed differences between both acidification techniques: while microalgae growth was enhanced by CO2 supply, reaching the optimal growth at pH 6.5 and full inhibition at pH 5.5, HCl acidification growth was inhibited at pH 6.5. Although small concentrations of Zn were positive for P. roscoffensis growth, Zn toxicity increased at lower pHs, and more severely on samples acidified with HCl. The conclusions obtained in this work are useful to address the potential effects on the marine ecosystem related to changes in metal bioavailability during CO2 leakages scenarios. Copyright © 2015 Elsevier Ltd. All rights reserved.

Design of a Vertical Composite Thin Film System with Ultralow Leakage To Yield Large Converse Magnetoelectric Effect.

PubMed

Wu, Rui; Kursumovic, Ahmed; Gao, Xingyao; Yun, Chao; Vickers, Mary E; Wang, Haiyan; Cho, Seungho; MacManus-Driscoll, Judith L

2018-05-30

Electric field control of magnetism is a critical future technology for low-power, ultrahigh density memory. However, despite intensive research efforts, no practical material systems have emerged. Interface-coupled, composite systems containing ferroelectric and ferri-/ferromagnetic elements have been widely explored, but they have a range of problems, for example, substrate clamping, large leakage, and inability to miniaturize. In this work, through careful material selection, design, and nanoengineering, a high-performance room-temperature magnetoelectric system is demonstrated. The clamping problem is overcome by using a vertically aligned nanocomposite structure in which the strain coupling is independent of the substrate. To overcome the leakage problem, three key novel advances are introduced: a low leakage ferroelectric, Na 0.5 Bi 0.5 TiO 3 ; ferroelectric-ferrimagnetic vertical interfaces which are not conducting; and current blockage via a rectifying interface between the film and the Nb-doped SrTiO 3 substrate. The new multiferroic nanocomposite (Na 0.5 Bi 0.5 TiO 3 -CoFe 2 O 4 ) thin-film system enables, for the first time, large-scale in situ electric field control of magnetic anisotropy at room temperature in a system applicable for magnetoelectric random access memory, with a magnetoelectric coefficient of 1.25 × 10 -9 s m -1 .

Conductive paths through polycrystalline BaTiO{sub 3}: Scanning probe microscopy study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayvazian, Talin; Bersuker, Gennadi; Lingley, Zachary R.

2016-08-15

The microstructural features determining the leakage current through polycrystalline BaTiO{sub 3} films are investigated using Conductive Atomic Force Microscopy. Grain boundaries are found to be the dominant conductive paths compared to the conduction through the grains. Grain boundary currents are observed to reversibly rise with the increase of the applied DC voltages, indicating that the current is controlled by a field-activated charge transport process.

Effect of ozone treatment on the electrical properties of (Ba0.7Sr0.3)TiO3 thin films

NASA Astrophysics Data System (ADS)

Halder, Sandip; Schneller, Theodor; Meyer, Rene; Waser, Rainer

2005-06-01

Thin films of (BaxSr1-x)TiO3 were deposited on Pt-coated Si substrates by chemical solution deposition. The films were postannealed under ozone atmosphere at various temperatures. Although there was no change observed in the microstructure after the anneal in ozone, the dielectric dispersion and the loss tangents were reduced for the films. It was also noticed that the leakage current reduced by almost two orders of magnitude after treatment with ozone. The ozone treatment was done at various temperatures between 250 and 450°C to find an optimum temperature with regard to the electrical properties. Films postannealed in ozone at 350°C for 30min showed a leakage reduction by almost three orders of magnitude. The leakage dependence on ozone postannealing is discussed on the basis of an interface-dominated (Schottky injection) and a bulk-dominated (point defect approach) charge transport process as the two limiting conduction mechanisms across thin films.

Understanding and Mitigating Tip Leakage and Endwall Losses in High Pressure Ratio Cores

NASA Technical Reports Server (NTRS)

Christophel, Jesse

2015-01-01

Reducing endwall and tip secondary flow losses will be a key enabler for the next generation of commercial and military air transport and will be an improvement on the state-of-the-art in turbine loss reduction strategies. The objective of this research is three-fold: 1) To improve understanding of endwall secondary flow and tip clearance losses 2) To develop novel technologies to mitigate these losses and test them in low-speed cascade and rig environments 3) To validate predictive tools To accomplish these objectives, Pratt & Whitney (P&W) has teamed with Pennsylvania State University (PSU) to experimentally test new features designed by P&W. P&W will create new rim-cavity features to reduce secondary flow loss and improve purge flow cooling effectiveness and new blade tip features to manage leakage flows and reduce tip leakage secondary flow loss. P&W is currently developing technologies in these two areas that expect to be assimilated in the N+2/N+3 generation of commercial engines.

75 FR 17169 - Nextera Energy Duane Arnold, LLC, Duane Arnold Energy Center; Exemption

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-05

... leakage from the overall integrated leak rate test measurement. Main steam leakage includes leakage... integrated leakage rate (Type A) test measurement and from the sum of the leakage rates from local leakage... leakage rate (Type A) test [[Page 17170

Voltage and Current Clamp Transients with Membrane Dielectric Loss

PubMed Central

Fitzhugh, R.; Cole, K. S.

1973-01-01

Transient responses of a space-clamped squid axon membrane to step changes of voltage or current are often approximated by exponential functions of time, corresponding to a series resistance and a membrane capacity of 1.0 μF/cm2. Curtis and Cole (1938, J. Gen. Physiol. 21:757) found, however, that the membrane had a constant phase angle impedance z = z1(jωτ)-α, with a mean α = 0.85. (α = 1.0 for an ideal capacitor; α < 1.0 may represent dielectric loss.) This result is supported by more recently published experimental data. For comparison with experiments, we have computed functions expressing voltage and current transients with constant phase angle capacitance, a parallel leakage conductance, and a series resistance, at nine values of α from 0.5 to 1.0. A series in powers of tα provided a good approximation for short times; one in powers of t-α, for long times; for intermediate times, a rational approximation matching both series for a finite number of terms was used. These computations may help in determining experimental series resistances and parallel leakage conductances from membrane voltage or current clamp data. PMID:4754194

Design and Synthesis of Archaea-Inspired Tetraether Lipids

NASA Astrophysics Data System (ADS)

Koyanagi, Takaoki

Maintaining the correct ion homeostasis across membranes is a major challenge in both nature and artificial systems. Archaea, have evolved to solve membrane permeability problems to survive in extreme environments by incorporating unique structural features found in their lipid. Specifically, inclusion of phytanyl side chains, ether glycerol linkages, tethering of lipids, cycloalkanes, and different polar lipid headgroups into their lipid membrane are believed to contribute to membrane stability. We sought to gain a better understanding of the functional benefits attributed to these structural features to membrane stability to design a new class of synthetic Archaea inspired lipid membranes that can be used to overcome limitations (i.e. unstable in serum environment, high background leakage, and prone to hydrolysis) found in current lipid based technologies. Leakage experiments revealed liposomes made from GMGTPC (glycerol monoalkyl glycerol tetraether lipid with phosphatidylcholine headgroup) demonstrated a two order magnitude reduction in membrane leakage to small ions when compared with liposomes made from EggPC. Additionally, liposomes composed of GMGTPC-CH (cyclohexane integrated) lipid displayed an additional 40% decrease in membrane leakage to small ions when compared with liposomes made from GMGTPC lipids. Furthermore, leakage experiments revealed a higher degree of tolerance to headgroup modifications to membrane leakage for liposomes made from GMGT lipid analogs when compared with liposomes made from POPC. After designing an optimal tetraether lipid scaffold that incorporates key Archaeal structural features for membrane leakage, we explored to integrate strategies employed by eukaryotes to improve membrane properties (i.e. addition of cholesterol). Liposomes made from the hybrid lipid, GcGTPC-CH, displayed a five-fold decrease in membrane leakage when compared with liposomes made from GMGTPC-CH, while maintaining functional membrane properties similar to membranes made from diacyl lipids. Lastly, we engineered a thiol responsive hybrid lipid, GcGT(S-S)PC-CH, that demonstrated similar membrane stability in serum as GcGTPC-CH. Gratifyingly, doxorubicin loaded liposomes composed of GcGT(S-S)PC-CH liposomes displayed a 4 or 20-fold increase in toxicity to HeLa cells when compared with liposomes made from GcGTPC-CH or Doxil, respectively. This work represents a first step towards development of stimuli-responsive tetraether lipids that may offer advantages in membrane properties to be used in cancer therapy.

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Astrophysics Data System (ADS)

Guidice, Donald A.

1995-10-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Technical Reports Server (NTRS)

Guidice, Donald A.

1995-01-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

PubMed Central

Wang, Yi-Guang; Liu, Qiu-Xiang; Jiang, Yan-Ping; Jiang, Li-Li

2017-01-01

Sr(Ti1−xFex)O3−δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFex)O3−δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the ferroelectric test system, and the vibrating sample magnetometer (VSM). After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr) of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFex)O3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFex)O3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1)O3−δ thin films were also discussed in detail. PMID:28885579

Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current

NASA Astrophysics Data System (ADS)

Kumari, Tripty; Saha, Priyanka; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-01-01

The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply voltage. However, the main challenging issue associated with realizing TFET for wide scale applications is its low ON current. To overcome this, a dual gate material with the concept of dielectric engineering has been incorporated into conventional TFET structure to tune the tunneling width at source-channel interface allowing significant flow of carriers. In addition to this, N+ pocket is implanted at source-channel junction of the proposed structure and the effect of strain is added for exploring the performance of the model in nanoscale regime. All these added features upgrade the device characteristics leading to higher ON current, low leakage and low threshold voltage. The present work derives the surface potential, electric field expression and drain current by solving 2D Poisson's equation at different boundary conditions. A comparative analysis of proposed model with conventional TFET has been done to establish the superiority of the proposed structure. All analytical results have been compared with the results obtained in SILVACO ATLAS device simulator to establish the accuracy of the derived analytical model.

A new leakage measurement method for damaged seal material

NASA Astrophysics Data System (ADS)

Wang, Shen; Yao, Xue Feng; Yang, Heng; Yuan, Li; Dong, Yi Feng

2018-07-01

In this paper, a new leakage measurement method based on the temperature field and temperature gradient field is proposed for detecting the leakage location and measuring the leakage rate in damaged seal material. First, a heat transfer leakage model is established, which can calculate the leakage rate based on the temperature gradient field near the damaged zone. Second, a finite element model of an infinite plate with a damaged zone is built to calculate the leakage rate, which fits the simulated leakage rate well. Finally, specimens in a tubular rubber seal with different damage shapes are used to conduct the leakage experiment, validating the correctness of this new measurement principle for the leakage rate and the leakage position. The results indicate the feasibility of the leakage measurement method for damaged seal material based on the temperature gradient field from infrared thermography.

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn

2014-11-14

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be themore » best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.« less

Asymmetrical Capacitors for Propulsion

NASA Technical Reports Server (NTRS)

Canning, Francis X.; Melcher, Cory; Winet, Edwin

2004-01-01

Asymmetrical Capacitor Thrusters have been proposed as a source of propulsion. For over eighty years, it has been known that a thrust results when a high voltage is placed across an asymmetrical capacitor, when that voltage causes a leakage current to flow. However, there is surprisingly little experimental or theoretical data explaining this effect. This paper reports on the results of tests of several Asymmetrical Capacitor Thrusters (ACTs). The thrust they produce has been measured for various voltages, polarities, and ground configurations and their radiation in the VHF range has been recorded. These tests were performed at atmospheric pressure and at various reduced pressures. A simple model for the thrust was developed. The model assumed the thrust was due to electrostatic forces on the leakage current flowing across the capacitor. It was further assumed that this current involves charged ions which undergo multiple collisions with air. These collisions transfer momentum. All of the measured data was consistent with this model. Many configurations were tested, and the results suggest general design principles for ACTs to be used for a variety of purposes.

Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

NASA Astrophysics Data System (ADS)

Huang, Shyh-Jer; Chou, Cheng-Wei; Su, Yan-Kuin; Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long; Ruan, Jian-Long

2017-04-01

In this paper, we present a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiOx capping layer. The p-NiOx layer is produced by sputtering at room temperature and post-annealing at 500 °C for 30 min in pure O2 environment to achieve high hole concentration. The Vth shifts from -3 V in the conventional transistor to 0.33 V, and on/off current ratio became 107. The forward and reverse gate breakdown increase from 3.5 V and -78 V to 10 V and -198 V, respectively. The reverse gate leakage current is 10-9 A/mm, and the off-state drain-leakage current is 10-8 A/mm. The Vth hysteresis is extremely small at about 33 mV. We also investigate the mechanism that increases hole concentration of p-NiOx after annealing in oxygen environment resulted from the change of Ni2+ to Ni3+ and the surge of (111)-orientation.

Training Graduate and Undergraduate Students in Simulation and Risk Assessment for Carbon Sequestration

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCray, John

Capturing carbon dioxide (CO2) and injecting it into deep underground formations for storage (carbon capture and underground storage, or CCUS) is one way of reducing anthropogenic CO2 emissions. Gas or aqueous-phase leakage may occur due to transport via faults and fractures, through faulty well bores, or through leaky confining materials. Contaminants of concern include aqueous salts and dissolved solids, gaseous or aqueous-phase organic contaminants, and acidic gas or aqueous-phase fluids that can liberate metals from aquifer minerals. Understanding the mechanisms and parameters that can contribute to leakage of the CO2 and the ultimate impact on shallow water aquifers that overliemore » injection formations is an important step in evaluating the efficacy and risks associated with long-term CO2 storage. Three students were supported on the grant Training Graduate and Undergraduate Students in Simulation and Risk Assessment for Carbon Sequestration. These three students each examined a different aspect of simulation and risk assessment related to carbon dioxide sequestration and the potential impacts of CO2 leakage. Two performed numerical simulation studies, one to assess leakage rates as a function of fault and deep reservoir parameters and one to develop a method for quantitative risk assessment in the event of a CO2 leak and subsequent changes in groundwater chemistry. A third student performed an experimental evaluation of the potential for metal release from sandstone aquifers under simulated leakage conditions. This study has resulted in two student first-authored published papers {Siirila, 2012 #560}{Kirsch, 2014 #770} and one currently in preparation {Menke, In prep. #809}.« less

Flow and Performance Calculations of Axial Compressor near Stall Margin

NASA Astrophysics Data System (ADS)

Hwang, Yoojun; Kang, Shin-Hyoung

2010-06-01

Three-dimensional flows through a Low Speed Research Axial Compressor were numerically conducted in order to estimate the performance through unsteady and steady-state simulations. The first stage with the inlet guide vane was investigated at the design point to confirm that the rotor blade induced periodicity exists. Special attention was paid to the flow near the stall condition to inspect the flow behavior in the vicinity of the stall margin. The performance predicted under the steady-state assumption is in good agreement with the measured data. However, the steady-state calculations induce more blockage through the blade passage. Flow separations on the blade surface and end-walls are reduced when unsteady simulation is conducted. The negative jet due to the wake of the rotor blade periodically distorts the boundary layer on the surface of the stator blade and improves the performance of the compressor in terms of the pressure rise. The advantage of the unsteadiness increases as the flow rate reduces. In addition, the rotor tip leakage flow is forced downstream by the unsteadiness. Consequently, the behavior contributes to extending the range of operation by preventing the leakage flow from proceeding upstream near the stall margin.

Brush Seal Performance and Durability Issues Based on T-700 Engine Test Results

NASA Technical Reports Server (NTRS)

Hendricks, R. C.

1994-01-01

The integrity and performance of brush seals have been established. Severe bench and engine tests have shown high initial wear or run-in rates, material smearing at the interface, and bristle and rub-runner wear, but the brush seals did not fail. Short-duration (46 hr) experimental T-700 engine testing of the compressor discharge seal established over 1-percent engine performance gain (brush versus labyrinth). Long-term gains were established only as leakage comparisons, with the brush at least 20 percent better at controlling leakage. Long-term materials issues, such as wear and ultimately seal life, remain to be resolved. Future needs are cited for materials and analysis tools that account for heat generation, thermomechanical behavior, and tribological pairing to enable original equipment manufacturers to design high-temperature, high-surface-speed seals with confidence.

Benefits of agomelatine in behavioral, neurochemical and blood brain barrier alterations in prenatal valproic acid induced autism spectrum disorder.

PubMed

Kumar, Hariom; Sharma, B M; Sharma, Bhupesh

2015-12-01

Valproic acid administration during gestational period causes behavior and biochemical deficits similar to those observed in humans with autism spectrum disorder. Although worldwide prevalence of autism spectrum disorder has been increased continuously, therapeutic agents to ameliorate the social impairment are very limited. The present study has been structured to investigate the therapeutic potential of melatonin receptor agonist, agomelatine in prenatal valproic acid (Pre-VPA) induced autism spectrum disorder in animals. Pre-VPA has produced reduction in social interaction (three chamber social behavior apparatus), spontaneous alteration (Y-Maze), exploratory activity (Hole board test), intestinal motility, serotonin levels (prefrontal cortex and ileum) and prefrontal cortex mitochondrial complex activity (complex I, II, IV). Furthermore, Pre-VPA has increased locomotor activity (actophotometer), anxiety, brain oxidative stress (thiobarbituric acid reactive species, glutathione, and catalase), nitrosative stress (nitrite/nitrate), inflammation (brain and ileum myeloperoxidase activity), calcium levels and blood brain barrier leakage in animals. Treatment with agomelatine has significantly attenuated Pre-VPA induced reduction in social interaction, spontaneous alteration, exploratory activity intestinal motility, serotonin levels and prefrontal cortex mitochondrial complex activity. Furthermore, agomelatine also attenuated Pre-VPA induced increase in locomotion, anxiety, brain oxidative stress, nitrosative stress, inflammation, calcium levels and blood brain barrier leakage. It is concluded that, Pre-VPA has induced autism spectrum disorder, which was attenuated by agomelatine. Agomelatine has shown ameliorative effect on behavioral, neurochemical and blood brain barrier alteration in Pre-VPA exposed animals. Thus melatonin receptor agonists may provide beneficial therapeutic strategy for managing autism spectrum disorder. Copyright © 2015 Elsevier Ltd. All rights reserved.

External short circuit performance of Graphite-LiNi1/3Co1/3Mn1/3O2 and Graphite-LiNi0.8Co0.15Al0.05O2 cells at different external resistances

NASA Astrophysics Data System (ADS)

Kriston, Akos; Pfrang, Andreas; Döring, Harry; Fritsch, Benjamin; Ruiz, Vanesa; Adanouj, Ibtissam; Kosmidou, Theodora; Ungeheuer, Jürgen; Boon-Brett, Lois

2017-09-01

This study aims at analyzing the response of Li-ion cells and at identifying the hazards and governing phenomena from hard to soft external short circuit conditions. 10 Ah pouch cells and 4.5 mAh coin cells were short circuited while synchronized current, potential and temperature signals, audio, IR and visual video recordings were registered. The anode, cathode and separator harvested from the cells were characterized by Scanning Electron Microscopy, micro X-ray Computed Tomography and 3D-profilometry. The complex short circuit behavior obtained can be described by 3 regions: In the first region 274C-rate is observed which is mainly governed by the cell's double and diffusion layer discharge. In the second region, the current drops significantly to 50-60C-rate where mass transport becomes the current limiting factor. The maximum temperature (77-121 °C) is reached and cell rupture, venting and electrolyte leakage may occur. In the final, third region the current decline continues due to the decaying electromotive force. The normalized external/internal resistance ratio is found to be the main influential factor on current and hazards rather than the external resistance or the capacity of the cell. The implications on the relevance and fitness-for-purpose of external short circuit test in standards are outlined.

The role of warning behaviors in threat assessment: an exploration and suggested typology.

PubMed

Reid Meloy, J; Hoffmann, Jens; Guldimann, Angela; James, David

2012-01-01

The concept of warning behaviors offers an additional perspective in threat assessment. Warning behaviors are acts which constitute evidence of increasing or accelerating risk. They are acute, dynamic, and particularly toxic changes in patterns of behavior which may aid in structuring a professional's judgment that an individual of concern now poses a threat - whether the actual target has been identified or not. They require an operational response. A typology of eight warning behaviors for assessing the threat of intended violence is proposed: pathway, fixation, identification, novel aggression, energy burst, leakage, directly communicated threat, and last resort warning behaviors. Previous research on risk factors associated with such warning behaviors is reviewed, and examples of each warning behavior from various intended violence cases are presented, including public figure assassination, adolescent and adult mass murder, corporate celebrity stalking, and both domestic and foreign acts of terrorism. Practical applications and future research into warning behaviors are suggested. Copyright © 2011 John Wiley & Sons, Ltd.

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-12-01

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

Experiments with high-voltage insulators in the presence of tritium

NASA Astrophysics Data System (ADS)

Grisham, L. R.; Falter, H.; Causey, R.; Chrisman, W.; Stevenson, T.; Wright, K.

1991-02-01

During the final deuterium-tritium phases of the TFTR and JET tokamaks half of the neutral injectors will be used to produce tritium neutral beams to maintain an equal mix of deuterium and tritium in the core plasma, and such requirements may also occur in future devices. This will require that the voltage hold off capabilities of the high voltage insulators in the accelerators be unimpaired by any charge buildups associated with the beta decay of adsorbed layers. We report tests in which we measured the drain currents under high dc voltage of TFTR and JET accelerator insulators while they were successively exposed to vacuum, deuterium and tritium. There did not appear to be any substantial reduction in hold-off capability with tritium, although at some voltages there was a small increase in the leakage current. We also compared the breakdown properties of a plastic tubing filled with deuterium and then tritium at varying pressures, since such tubing has been considered as a high-voltage break in the gas feed system for TFTR, and the presence of large numbers of electron-ion pairs might lead to enhanced Paschen breakdown. We found no significant differences in the behavior for the geometry used.

Interfacial characteristics and leakage current transfer mechanisms in organometal trihalide perovskite gate-controlled devices via doping of PCBM

NASA Astrophysics Data System (ADS)

Wang, Yucheng; Zhang, Yuming; Liu, Yintao; Pang, Tiqiang; Hu, Ziyang; Zhu, Yuejin; Luan, Suzhen; Jia, Renxu

2017-11-01

Two types of perovskite (with and without doping of PCBM) based metal-oxide-semiconductor (MOS) gate-controlled devices were fabricated and characterized. The study of the interfacial characteristics and charge transfer mechanisms by doping of PCBM were analyzed by material and electrical measurements. Doping of PCBM does not affect the size and crystallinity of perovskite films, but has an impact on carrier extraction in perovskite MOS devices. The electrical hysteresis observed in capacitance-voltage and current-voltage measurements can be alleviated by doping of PCBM. Experimental results demonstrate that extremely low trap densities are found for the perovskite device without doping, while the doped sample leads to higher density of interface state. Three mechanisms including Ohm’s law, trap-filled-limit (TFL) emission, and child’s law were used to analyze possible charge transfer mechanisms. Ohm’s law mechanism is well suitable for charge transfer of both the perovskite MOS devices under light condition at large voltage, while TFL emission well addresses the behavior of charge transfer under dark at small voltage. This change of charge transfer mechanism is attributed to the impact of the ion drift within perovskites.

Evaluation of Groundwater Leakage into a Drainage Tunnel in Jinping-I Arch Dam Foundation in Southwestern China: A Case Study

NASA Astrophysics Data System (ADS)

Chen, Yi-Feng; Hong, Jia-Min; Zheng, Hua-Kang; Li, Yi; Hu, Ran; Zhou, Chuang-Bing

2016-03-01

The Jinping-I double-curvature arch dam, located in the middle reach of Yalong River and with a maximum height of 305 m, is the world's highest dam of this type that has been completed. Since the second stage of reservoir impounding, after which the reservoir water level was gradually raised by about 232 m, a significant amount of leakage was observed from the drainage holes drilled in the lowest drainage tunnel at the left bank abutment at an elevation of 1595 m a.s.l. (above sea level), with an observed maximum pressure of about 0.3 MPa. A number of investigations, including water quality analysis, digital borehole imaging, tunnel geological mapping, and in situ groundwater monitoring, were performed to examine the source of leaking, the groundwater flow paths, and the performance of the grouting curtains. By defining two objective functions using the in situ time series measurements of flow rate and hydraulic head, respectively, a multiobjective inverse modeling procedure was proposed to evaluate the permeability of the foundation rocks that was underestimated in the design stage. This procedure takes advantage of the orthogonal design, finite element forward modeling of the transient groundwater flow, artificial neural network, and non-dominated sorting genetic algorithm, hence significantly reducing the computational cost and improving the reliability of the inversed results. The geological structures that lead to the leakage were identified and the seepage flow behaviors in the dam foundation and the left bank abutment were assessed. Based on the field measurements and the inverse modeling results, the effects of the engineering treatments of the leakage event on the dam safety were analyzed. It has been demonstrated that the seepage control system is effective in lowering the groundwater level and limiting the amount of seepage in the dam foundation, and the leakage event does not pose a threat to the safety of the dam.

Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

2008-01-01

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

Energy breakdown in capacitive deionization.

PubMed

Hemmatifar, Ali; Palko, James W; Stadermann, Michael; Santiago, Juan G

2016-11-01

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages. We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). We show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency. Copyright © 2016 Elsevier Ltd. All rights reserved.

Energy breakdown in capacitive deionization

DOE PAGES

Hemmatifar, Ali; Palko, James W.; Stadermann, Michael; ...

2016-08-12

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages.more » We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). As a result, we show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency.« less

Western diets induce blood-brain barrier leakage and alter spatial strategies in rats.

PubMed

Hargrave, Sara L; Davidson, Terry L; Zheng, Wei; Kinzig, Kimberly P

2016-02-01

Western diet (WD) intake induces obesity and metabolic dysfunction. The present study examined the effects of WD on hippocampal-dependent cognitive functioning and blood-brain barrier (BBB) permeability as a function of exposure duration, obesity phenotype, and peripheral markers of energy regulation. The use of hippocampal-dependent "place" or hippocampal-independent "response" strategies in a Y maze was assessed in male rats following 10, 40, and 90 days of WD exposure in diet-induced obese (DIO) rats, in diet resistant (DR) rats that are relatively insensitive to the obesogenic properties of WD, and in chow-fed controls. Insulin, glucose, and BBB permeability throughout several loci in the hippocampus, striatum, and cerebellum were evaluated in relation to duration of WD exposure, obesity phenotype, and type of strategy used. DIO rats had increased body weight and adiposity throughout the study, and elevated 10-day glucose and 90-day insulin levels. Throughout the study, chow-fed and DR rats reliably relied on a place strategy. DIO rats, in contrast, favored a response strategy at the 10- and 90-day time points. BBB leakage was observed in the dorsal striatum and multiple subregions of the hippocampus of DIO, but not DR or chow-fed rats. Increased ventral hippocampal BBB permeability and blood glucose levels were associated with reduced place strategy use. These data indicate that WD-induced BBB leakage is dependent on duration of diet exposure as well as obesity phenotype, and implicates BBB leakage and impaired glucoregulation in behavioral strategy and cognitive performance. (c) 2016 APA, all rights reserved).

Comparison of Transformer Winding Methods for Contactless Power Transfer Systems of Electric Vehicle

NASA Astrophysics Data System (ADS)

Kaneko, Yasuyoshi; Ehara, Natsuki; Iwata, Takuya; Abe, Shigeru; Yasuda, Tomio; Ida, Kazuhiko

This paper describes the comparison of the characteristics of double- and single-sided windings of contactless power transfer systems used in electric vehicles. The self-inductance changes with the electric current when the gap length is fixed in single-sided windings. The issue is resolved by maintaining the secondary voltage constant. In the case of double-sided windings, the transformer can be miniaturized in comparison with the single-sided winding transformer. However, the coupling factor is small, and appropriate countermeasures must be adopted to reduce the back leakage flux. The leakage flux is reduced by placing an aluminum board behind the transformer. Thus, the coupling factor increases.

Overview of NASA Glenn Seal Project

NASA Technical Reports Server (NTRS)

Steinetz, Bruce M.; Dunlap, Patrick H., Jr.; Proctor, Margaret; Delgado, Irebert; Finkbeiner,Joshua; deGroh, Henry; Ritzert, Frank; Daniels, Christopher; DeMange, Jeff; Taylor, Shawn;

Bio-isolated DC operational amplifier

NASA Technical Reports Server (NTRS)

Lee, R. D.

1974-01-01

Possibility of shocks from leakage currents can be reduced by use of isolated preamplifiers. Amplifier consists of battery-powered operational amplifier coupled by means of light-emitting diodes to another amplifier which may be grounded and operated from ac power mains or separate battery supply.

Application of Remote-Field Eddy Current Testing to Inspection of Unpiggable Pipelines

DOT National Transportation Integrated Search

2003-07-02

Corrosion of buried pipelines can lead to catastrophic failure. Many pipelines are successfully inspected by magnetic flux leakage (MFL) pigs to detect corrosion. However, there is a subset of pipelines for which MFL is not feasible. To inspect those...

In vitro and in vivo evaluation of ultrananocrystalline diamond as an encapsulation layer for implantable microchips.

PubMed

Chen, Ying-Chieh; Tsai, Che-Yao; Lee, Chi-Young; Lin, I-Nan

2014-05-01

Thin ultrananocrystalline diamond (UNCD) films were evaluated for use as hermetic and bioinert encapsulating coatings for implantable microchips, where the reaction to UNCD in vitro and in vivo tissue was investigated. Leakage current tests showed that depositing UNCD coatings, which were conformally grown in (1% H2) Ar/CH4 plasma, on microchips rendered the surface electrochemically inactive, i.e. with a very low leakage current density (2.8×10(-5)Acm(-2) at -1V and 1.9×10(-3)Acm(-2) at ±5V) ex vivo. The impact of UNCD with different surface modifications on the growth and activation of macrophages was compared to that of standard-grade polystyrene. Macrophages attached to oxygen-terminated UNCD films down-regulated their production of cytokines and chemokines. Moreover, with UNCD-coated microchips, which were implanted subcutaneously into BALB/c mice for up to 3months, the tissue reaction and capsule formation was significantly decreased compared to the medical-grade titanium alloy Ti-6Al-4V and bare silicon. Additionally, the leakage current density, elicited by electrochemical activity, on silicon chips encapsulated in oxygen-terminated UNCD coatings remained at the low level of 2.5×10(-3)Acm(-2) at 5V for up to 3months in vivo, which is half the level of those encapsulated in hydrogen-terminated UNCD coatings. Thus, controlling the surface properties of UNCDs makes it possible to manipulate the in vivo functionality and stability of implantable devices so as to reduce the host inflammatory response following implantation. These observations suggest that oxygen-terminated UNCDs are promising candidates for use as encapsulating coatings for implantable microelectronic devices. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Transformer modeling for low- and mid-frequency electromagnetic transients simulation

NASA Astrophysics Data System (ADS)

Lambert, Mathieu

In this work, new models are developed for single-phase and three-phase shell-type transformers for the simulation of low-frequency transients, with the use of the coupled leakage model. This approach has the advantage that it avoids the use of fictitious windings to connect the leakage model to a topological core model, while giving the same response in short-circuit as the indefinite admittance matrix (BCTRAN) model. To further increase the model sophistication, it is proposed to divide windings into coils in the new models. However, short-circuit measurements between coils are never available. Therefore, a novel analytical method is elaborated for this purpose, which allows the calculation in 2-D of short-circuit inductances between coils of rectangular cross-section. The results of this new method are in agreement with the results obtained from the finite element method in 2-D. Furthermore, the assumption that the leakage field is approximately 2-D in shell-type transformers is validated with a 3-D simulation. The outcome of this method is used to calculate the self and mutual inductances between the coils of the coupled leakage model and the results are showing good correspondence with terminal short-circuit measurements. Typically, leakage inductances in transformers are calculated from short-circuit measurements and the magnetizing branch is calculated from no-load measurements, assuming that leakages are unimportant for the unloaded transformer and that magnetizing current is negligible during a short-circuit. While the core is assumed to have an infinite permeability to calculate short-circuit inductances, and it is a reasonable assumption since the core's magnetomotive force is negligible during a short-circuit, the same reasoning does not necessarily hold true for leakage fluxes in no-load conditions. This is because the core starts to saturate when the transformer is unloaded. To take this into account, a new analytical method is developed in this dissertation, which removes the contributions of leakage fluxes to properly calculate the magnetizing branches of the new models. However, in the new analytical method for calculating short-circuit inductances (as with other analytical methods), eddy-current losses are neglected. Similarly, winding losses are omitted in the coupled leakage model and in the new analytical method to remove leakage fluxes to calculate core parameters from no-load tests. These losses will be taken into account in future work. Both transformer models presented in this dissertation are based on the classical hypothesis that flux can be discretized into flux tubes, which is also the assumption used in a category of models called topological models. Even though these models are physically-based, there exist many topological models for a given transformer geometry. It is shown in this work that these differences can be explained in part through the concepts of divided and integral fluxes, and it is explained that divided approach is the result of mathematical manipulations, while the integral approach is more "physically-accurate". Furthermore, it is demonstrated, for the special case of a two-winding single-phase transformer, that the divided leakage inductances have to be nonlinear for both approaches to be equivalent. Even between models of the divided or integral approach models, there are differences, which arise from the particular choice of so-called flux paths" (tubes). This arbitrariness comes from the fact that with the classical hypothesis that magnetic flux can be confined into predefined flux tubes (leading to classical magnetic circuit theory), it is assumed that flux cannot leak from the sides of flux tubes. Therefore, depending on the transformer's operation conditions (degree of saturation, short-circuit, etc.), this can lead to different choices of flux tubes and different models. In this work, a new theoretical framework is developed to allow flux to leak from the sides of the tube, and generalized to include resistances and capacitances in what is called electromagnetic circuit theory. Also, it is explained that this theory is actually equivalent to what is called finite formulations (such as the finite element method), which bridges the gap between circuit theory and discrete electromagnetism. Therefore, this enables not only to develop topologically-correct transformer models, where electric and magnetic circuits are defined on dual meshes, but also rotating machine and transmission lines models (wave propagation can be taken into account).

Field Testing of Compartmentalization Methods for Multifamily Construction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ueno, K.; Lstiburek, J.

The 2012 IECC has an airtightness requirement of 3 air changes per hour at 50 Pascals test pressure for both single-family and multifamily construction in Climate Zones 3-8. Other programs (LEED, ASHRAE 189, ASHRAE 62.2) have similar or tighter compartmentalization requirements, driving the need for easier and more effective methods of compartmentalization in multifamily buildings. Builders and practitioners have found that fire-resistance rated wall assemblies are a major source of difficulty in air sealing/compartmentalization, particularly in townhouse construction. This problem is exacerbated when garages are “tucked in” to the units and living space is located over the garages. In thismore » project, Building Science Corporation examined the taping of exterior sheathing details to improve air sealing results in townhouse and multifamily construction, when coupled with a better understanding of air leakage pathways. Current approaches are cumbersome, expensive, time consuming, and ineffective; these details were proposed as a more effective and efficient method. The effectiveness of these air sealing methods was tested with blower door testing, including “nulled” or “guarded” testing (adjacent units run at equal test pressure to null out inter-unit air leakage, or “pressure neutralization”). Pressure diagnostics were used to evaluate unit-to-unit connections and series leakage pathways (i.e., air leakage from exterior, into the fire-resistance rated wall assembly, and to the interior).« less

What electrical measurements can say about changes in fault systems.

PubMed Central

Madden, T R; Mackie, R L

1996-01-01

Earthquake zones in the upper crust are usually more conductive than the surrounding rocks, and electrical geophysical measurements can be used to map these zones. Magnetotelluric (MT) measurements across fault zones that are parallel to the coast and not too far away can also give some important information about the lower crustal zone. This is because the long-period electric currents coming from the ocean gradually leak into the mantle, but the lower crust is usually very resistive and very little leakage takes place. If a lower crustal zone is less resistive it will be a leakage zone, and this can be seen because the MT phase will change as the ocean currents leave the upper crust. The San Andreas Fault is parallel to the ocean boundary and close enough to have a lot of extra ocean currents crossing the zone. The Loma Prieta zone, after the earthquake, showed a lot of ocean electric current leakage, suggesting that the lower crust under the fault zone was much more conductive than normal. It is hard to believe that water, which is responsible for the conductivity, had time to get into the lower crustal zone, so it was probably always there, but not well connected. If this is true, then the poorly connected water would be at a pressure close to the rock pressure, and it may play a role in modifying the fluid pressure in the upper crust fault zone. We also have telluric measurements across the San Andreas Fault near Palmdale from 1979 to 1990, and beginning in 1985 we saw changes in the telluric signals on the fault zone and east of the fault zone compared with the signals west of the fault zone. These measurements were probably seeing a better connection of the lower crust fluids taking place, and this may result in a fluid flow from the lower crust to the upper crust. This could be a factor in changing the strength of the upper crust fault zone. PMID:11607664

Thermogenic Wet Gas in Immature Caprock Sections: Leakage or Generation.

NASA Astrophysics Data System (ADS)

Abrakasa, Selegha; Beka, Francis; Ndukauba, Egesi

2017-04-01

Gas geochemistry, an aspect of Petroleum Geoscience is a growing science, various concepts has been used to evaluation potential source rock for shale gas while in conventional petroleum exploration similar concepts have been used to determine potential productive formation for liquid hydrocarbons. Prior to the present times, headspace gas data had been used to recognize by pass pays, serve as indicators of petroleum accumulations, evaluate maturity and productive capacity of corresponding formations, evaluate the maturity and source of gas accumulations. Integrating studies in bid to achieve high degree of accuracy, data on direct hydrocarbon indicators (DHIs) such as oil stains, oil shows and seeps have been employed. Currently popular among professionals is the use of gas clouds on seismic cross sections. In contemporary times, advancement in gas geochemistry has witnessed the application of concepts on headspace gas to expound the efficiency of petroleum caprocks whose major role is to foster accumulation and preservation. This enables extricating potential leakage mechanism via caprock reservoir interface and unravel its corresponding migrational pathways. In this study thermogenic wet gas has been used as a dependable tool for delineating caprock leakage by discriminating migrant from indigenous hydrocarbons in caprock rock sections overlying the reservoirs. The thermogenic gas profile in corroboration with the thermogenic signature and maturity data were used. Summary statistics indicates that 60% of the 50 wells studied has wet gas up to 500m above the reservoir-caprock interface and 10% of the leaking wells are fracture prone leakage.The amount of wet gas ranges of up to 200,000 ppm in the caprock sections, this indicates pervasive leakage. Log view plots were modelled using Schlumbergers' Techlog, while descriptive lithologies were modeled using Zetawares' genesis.

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

NASA Astrophysics Data System (ADS)

Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

2015-12-01

In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10 1 bar 0) GaN homoepitaxial layers

NASA Astrophysics Data System (ADS)

Barry, Ousmane I.; Tanaka, Atsushi; Nagamatsu, Kentaro; Bae, Si-Young; Lekhal, Kaddour; Matsushita, Junya; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

2017-06-01

We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m-plane (10 1 bar 0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m-plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m-GaN samples were characterized. Low leakage current densities of the order of 10-10 A/cm2 at -5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

Life estimation and analysis of dielectric strength, hydrocarbon backbone and oxidation of high voltage multi stressed EPDM composites

NASA Astrophysics Data System (ADS)

Khattak, Abraiz; Amin, Muhammad; Iqbal, Muhammad; Abbas, Naveed

2018-02-01

Micro and nanocomposites of ethylene propylene diene monomer (EPDM) are recently studied for different characteristics. Study on life estimation and effects of multiple stresses on its dielectric strength and backbone scission and oxidation is also vital for endorsement of these composites for high voltage insulation and other outdoor applications. In order to achieve these goals, unfilled EPDM and its micro and nanocomposites are prepared at 23 phr micro silica and 6 phr nanosilica loadings respectively. Prepared samples are energized at 2.5 kV AC voltage and subjected for a long time to heat, ultraviolet radiation, acid rain, humidity and salt fog in accelerated manner in laboratory. Dielectric strength, leakage current and intensity of saturated backbone and carbonyl group are periodically measured. Loss in dielectric strength, increase in leakage current and backbone degradation and oxidation were observed in all samples. These effects were least in the case of EPDM nanocomposite. The nanocomposite sample also demonstrated longest shelf life.

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

NASA Astrophysics Data System (ADS)

Green, D. S.; Gibb, S. R.; Hosse, B.; Vetury, R.; Grider, D. E.; Smart, J. A.

2004-12-01

High-quality GaN epitaxy continues to be challenged by the lack of matched substrates. Threading dislocations that result from heteroepitaxy are responsible for leakage currents, trapping effects, and may adversely affect device reliability. We have studied the impact of AlN nucleation conditions on the density and character of threading dislocations on SiC substrates. Variation of the nucleation temperature, V/III ratio, and thickness are seen to have a dramatic effect on the balance between edge, screw and mixed character dislocation densities. Electrical and structural properties have been assessed by AFM and XRD on a material level and through DC and RF performance at the device level. The ratio between dislocation characteristics has been established primarily through comparison of symmetric and asymmetric XRD rocking curve widths. The effect of each dislocation type on leakage current, RF power and reliability at 2 GHz, the targeted band for cell phone infrastructure applications, is discussed.