Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.

PubMed

Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh; Cheng, Yun-Wei; Chen, Liang-Yi; Lin, Guan-Jhong; Lu, Yu-Hsin; He, Jr-Hau; Kuo, Hao-Chung; Huang, JianJang

2010-12-15

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

PubMed

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

LED traffic signal management system : tech summary.

DOT National Transportation Integrated Search

2016-06-01

The light source of a signal module is comprised of an array of multiple individual light emitting diodes (LEDs). : Fading of the array over its operational life is a serious concern of traffic engineers throughout the nation. The : Institute of Tran...

Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Miniaturized high throughput detection system for capillary array electrophoresis on chip with integrated light emitting diode array as addressed ring-shaped light source.

PubMed

Ren, Kangning; Liang, Qionglin; Mu, Xuan; Luo, Guoan; Wang, Yiming

2009-03-07

A novel miniaturized, portable fluorescence detection system for capillary array electrophoresis (CAE) on a microfluidic chip was developed, consisting of a scanning light-emitting diode (LED) light source and a single point photoelectric sensor. Without charge coupled detector (CCD), lens, fibers and moving parts, the system was extremely simplified. Pulsed driving of the LED significantly increased the sensitivity, and greatly reduced the power consumption and photobleaching effect. The highly integrated system was robust and easy to use. All the advantages realized the concept of a portable micro-total analysis system (micro-TAS), which could work on a single universal serial bus (USB) port. Compared with traditional CAE detecting systems, the current system could scan the radial capillary array with high scanning rate. An 8-channel CAE of fluorescein isothiocyanate (FITC) labeled arginine (Arg) on chip was demonstrated with this system, resulting in a limit of detection (LOD) of 640 amol.

Strong light extraction enhancement using TiO2 nanoparticles-based microcone arrays embossed on III-Nitride light emitting diodes

NASA Astrophysics Data System (ADS)

Désières, Yohan; Chen, Ding Yuan; Visser, Dennis; Schippers, Casper; Anand, Srinivasan

2018-06-01

Colloidal TiO2 nanoparticles were used for embossing of composite microcone arrays on III-Nitride vertical-thin-film blue light emitting diodes (LEDs) as well as on silicon, glass, gallium arsenide, and gallium nitride surfaces. Ray tracing simulations were performed to optimize the design of microcones for light extraction and to explain the experimental results. An optical power enhancement of ˜2.08 was measured on III-Nitride blue LEDs embossed with a hexagonal array of TiO2 microcones of ˜1.35 μm in height and ˜2.6 μm in base width, without epoxy encapsulation. A voltage increase in ˜70 mV at an operating current density of ˜35 A/cm2 was measured for the embossed LEDs. The TiO2 microcone arrays were embossed on functioning LEDs, using low pressures (˜100 g/cm2) and temperatures ≤100 °C.

Analysis of light emitting diode array lighting system based on human vision: normal and abnormal uniformity condition.

PubMed

Qin, Zong; Ji, Chuangang; Wang, Kai; Liu, Sheng

2012-10-08

In this paper, condition for uniform lighting generated by light emitting diode (LED) array was systematically studied. To take human vision effect into consideration, contrast sensitivity function (CSF) was novelly adopted as critical criterion for uniform lighting instead of conventionally used Sparrow's Criterion (SC). Through CSF method, design parameters including system thickness, LED pitch, LED's spatial radiation distribution and viewing condition can be analytically combined. In a specific LED array lighting system (LALS) with foursquare LED arrangement, different types of LEDs (Lambertian and Batwing type) and given viewing condition, optimum system thicknesses and LED pitches were calculated and compared with those got through SC method. Results show that CSF method can achieve more appropriate optimum parameters than SC method. Additionally, an abnormal phenomenon that uniformity varies with structural parameters non-monotonically in LALS with non-Lambertian LEDs was found and analyzed. Based on the analysis, a design method of LALS that can bring about better practicability, lower cost and more attractive appearance was summarized.

Light beam shaping for collimated emission from white organic light-emitting diodes using customized lenticular microlens arrays structure

NASA Astrophysics Data System (ADS)

Zhou, Lei; Bai, Gui-Lin; Guo, Xin; Shen, Su; Ou, Qing-Dong; Fan, Yuan-Yuan

2018-05-01

We present a design approach to realizing a desired collimated planar incoherent light source (CPILS) by incorporating lenticular microlens arrays (LMLAs) onto the substrates of discrete white organic light-emitting diode (WOLED) light sources and demonstrate the effectiveness of this method in collimated light beam shaping and luminance enhancement simultaneously. The obtained collimated WOLED light source shows enhanced luminance by a factor of 2.7 compared with that of the flat conventional device at the normal polar angle and, more importantly, exhibits a narrowed angular emission with a full-width at half-maximum (FWHM) of ˜33.6°. We anticipate that the presented strategy could provide an alternative way for achieving the desired large scale CPILS, thereby opening the door to many potential applications, including LCD backlights, three-dimensional displays, car headlights, and so forth.

Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips.

PubMed

Han, Dan; Ma, Shufang; Jia, Zhigang; Liu, Peizhi; Jia, Wei; Shang, Lin; Zhai, Guangmei; Xu, Bingshe

2018-04-10

InGaN/GaN micro-square array light-emitting diode (LED) chips (micro-chips) have been prepared via the focused ion beam (FIB) etching technique, which can not only reduce ohmic contact degradation but also control the aspect ratio precisely in three-dimensional (3D) structure LED (3D-LED) device fabrication. The effects of FIB beam current and micro-square array depth on morphologies and optical and electrical properties of the micro-chips have been studied. Our results show that sidewall surface morphology and optical and electrical properties of the micro-chips degrade with increased beam current. After potassium hydroxide etching with different times, an optimal current-voltage and luminescence performance can be obtained. Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases. The mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain.

Vertical pillar-superlattice array and graphene hybrid light emitting diodes.

PubMed

Lee, Jung Min; Choung, Jae Woong; Yi, Jaeseok; Lee, Dong Hyun; Samal, Monica; Yi, Dong Kee; Lee, Chul-Ho; Yi, Gyu-Chul; Paik, Ungyu; Rogers, John A; Park, Won Il

2010-08-11

We report a type of device that combines vertical arrays of one-dimensional (1D) pillar-superlattice (PSL) structures with 2D graphene sheets to yield a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics. In this application, graphene sheets coated with very thin metal layers exhibit good mechanical and electrical properties and an ability to mount, in a freely suspended configuration, on the PSL arrays as a top window electrode. Optical characterization demonstrates that graphene exhibits excellent optical transparency even after deposition of the thin metal films. Thermal annealing of the graphene/metal (Gr/M) contact to the GaAs decreases the contact resistance, to provide enhanced carrier injection. The resulting PSL-Gr/M LEDs exhibit bright light emission over large areas. The result suggests the utility of graphene-based materials as electrodes in devices with unusual, nonplanar 3D architectures.

High-Fluence Light-Emitting Diode-Generated Red Light Modulates the Transforming Growth Factor-Beta Pathway in Human Skin Fibroblasts.

PubMed

Mamalis, Andrew; Jagdeo, Jared

2018-05-24

Skin fibrosis is a significant medical problem with limited available treatment modalities. The key cellular characteristics include increased fibroblast proliferation, collagen production, and transforming growth factor-beta (TGF-B)/SMAD pathway signaling. The authors have previously shown that high-fluence light-emitting diode red light (HF-LED-RL) decreases cellular proliferation and collagen production. Herein, the authors investigate the ability of HF-LED-RL to modulate the TGF-B/SMAD pathway. Normal human dermal fibroblasts were cultured and irradiated with a commercially available hand-held LED array. After irradiation, cell lysates were collected and levels of pSMAD2, TGF-Beta 1, and TGF-Beta I receptor were measured using Western blot. High-fluence light-emitting diode red light decreased TGF-Beta 1 ligand (TGF-B1) levels after irradiation. 320 J/cm HF-LED-RL resulted in 59% TGF-B1 and 640 J/cm HF-LED-RL resulted in 54% TGF-B1, relative to controls. 640 J/cm HF-LED-RL resulted in 62% pSMAD2 0 hours after irradiation, 65% pSMAD2 2 hours after irradiation, and 95% 4 hours after irradiation, compared with matched controls. High-fluence light-emitting diode red light resulted in no significant difference in transforming growth factor-beta receptor I levels compared with matched controls. Skin fibrosis is a significant medical problem with limited available treatment modalities. Light-emitting diode-generated red light is a safe, economic, and noninvasive modality that has a body of in vitro evidence supporting the reduction of key cellular characteristics associated with skin fibrosis.

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

PubMed

Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

2016-01-11

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

Macroscopic Violation of Three Cauchy-Schwarz Inequalities Using Correlated Light Beams From an Infra-Red Emitting Semiconductor Diode Array

NASA Technical Reports Server (NTRS)

Edwards, P. J.; Huang, X.; Li, Y. Q. (Editor); Wang, Y. Z. (Editor)

1996-01-01

We briefly review quantum mechanical and semi-classical descriptions of experiments which demonstrate the macroscopic violation of the three Cauchy-Schwarz inequalities: g(sup 2)(sub 11)(0) greater than or equal to 1; g(sup 2)(sub 11)(0) greater than or equal to g(sup 2)(sub 11)(t), (t approaches infinity); (the absolute value of g(sup 2)(sub 11)(0))(exp 2) less than or equal to g(sup 2)(sub 11)(0) g(sup 2)(sub 11)(0). Our measurements demonstrate the violation, at macroscopic intensities, of each of these inequalities. We show that their violation, although weak, can be demonstrated through photodetector current covariance measurements on correlated sub-Poissonian Poissonian, and super Poissonian light beams. Such beams are readily generated by a tandem array of infrared-emitting semiconductor junction diodes. Our measurements utilize an electrically coupled array of one or more infrared-emitting diodes, optically coupled to a detector array. The emitting array is operated in such a way as to generate highly correlated beams of variable photon Fano Factor. Because the measurements are made on time scales long compared with the first order coherence time and with detector areas large compared with the corresponding coherence areas, first order interference effects are negligible. The first and second inequalities are violated, as expected, when a sub-Poissonian light beam is split and the intensity fluctuations of the two split beams are measured by two photodetectors and subsequently cross-correlated. The third inequality is violated by bunched (as well as anti-bunched) beams of equal intensity provided the measured cross correlation coefficient exceeds (F - 1)/F, where F is the measured Fano Factor of each beam. We also investigate the violation for the case of unequal beams.

Operating scheme for the light-emitting diode array of a volumetric display that exhibits multiple full-color dynamic images

NASA Astrophysics Data System (ADS)

Hirayama, Ryuji; Shiraki, Atsushi; Nakayama, Hirotaka; Kakue, Takashi; Shimobaba, Tomoyoshi; Ito, Tomoyoshi

2017-07-01

We designed and developed a control circuit for a three-dimensional (3-D) light-emitting diode (LED) array to be used in volumetric displays exhibiting full-color dynamic 3-D images. The circuit was implemented on a field-programmable gate array; therefore, pulse-width modulation, which requires high-speed processing, could be operated in real time. We experimentally evaluated the developed system by measuring the luminance of an LED with varying input and confirmed that the system works appropriately. In addition, we demonstrated that the volumetric display exhibits different full-color dynamic two-dimensional images in two orthogonal directions. Each of the exhibited images could be obtained only from the prescribed viewpoint. Such directional characteristics of the system are beneficial for applications, including digital signage, security systems, art, and amusement.

Organic Light-Emitting Diode-on-Silicon Pixel Circuit Using the Source Follower Structure with Active Load for Microdisplays

NASA Astrophysics Data System (ADS)

Kwak, Bong-Choon; Lim, Han-Sin; Kwon, Oh-Kyong

2011-03-01

In this paper, we propose a pixel circuit immune to the electrical characteristic variation of organic light-emitting diodes (OLEDs) for organic light-emitting diode-on-silicon (OLEDoS) microdisplays with a 0.4 inch video graphics array (VGA) resolution and a 6-bit gray scale. The proposed pixel circuit is implemented using five p-channel metal oxide semiconductor field-effect transistors (MOSFETs) and one storage capacitor. The proposed pixel circuit has a source follower with a diode-connected transistor as an active load for improving the immunity against the electrical characteristic variation of OLEDs. The deviation in the measured emission current ranges from -0.165 to 0.212 least significant bit (LSB) among 11 samples while the anode voltage of OLED is 0 V. Also, the deviation in the measured emission current ranges from -0.262 to 0.272 LSB in pixel samples, while the anode voltage of OLED varies from 0 to 2.5 V owing to the electrical characteristic variation of OLEDs.

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Li, Shunfeng; Wang, Xue; Fündling, Sönke; Erenburg, Milena; Ledig, Johannes; Wei, Jiandong; Wehmann, Hergo H.; Waag, Andreas; Bergbauer, Werner; Mandl, Martin; Strassburg, Martin; Trampert, Achim; Jahn, Uwe; Riechert, Henning; Jönen, Holger; Hangleiter, Andreas

2012-07-01

Homogeneous nitrogen-polar GaN core-shell light emitting diode (LED) arrays were fabricated by selective area growth on patterned substrates. Transmission electron microscopy measurements prove the core-shell structure of the rod LEDs. Depending on the growth facets, the InGaN/GaN multi-quantum wells (MQWs) show different dimensions and morphology. Cathodoluminescence (CL) measurements reveal a MQWs emission centered at about 415 nm on sidewalls and another emission at 460 nm from top surfaces. CL line scans on cleaved rod also indicate the core-shell morphology. Finally, an internal quantum efficiency of about 28% at room temperature was determined by an all-optical method on a LED array.

Versatile light-emitting-diode-based spectral response measurement system for photovoltaic device characterization.

PubMed

Hamadani, Behrang H; Roller, John; Dougherty, Brian; Yoon, Howard W

2012-07-01

An absolute differential spectral response measurement system for solar cells is presented. The system couples an array of light emitting diodes with an optical waveguide to provide large area illumination. Two unique yet complementary measurement methods were developed and tested with the same measurement apparatus. Good agreement was observed between the two methods based on testing of a variety of solar cells. The first method is a lock-in technique that can be performed over a broad pulse frequency range. The second method is based on synchronous multifrequency optical excitation and electrical detection. An innovative scheme for providing light bias during each measurement method is discussed.

Cost-effective elimination of lipofuscin fluorescence from formalin-fixed brain tissue by white phosphor light emitting diode array.

PubMed

Sun, Yulong; Chakrabartty, Avi

2016-12-01

Autofluorescence of aldehyde-fixed tissues greatly hinders fluorescence microscopy. In particular, lipofuscin, an autofluorescent component of aged brain tissue, complicates fluorescence imaging of tissue in neurodegenerative diseases. Background and lipofuscin fluorescence can be reduced by greater than 90% through photobleaching using white phosphor light emitting diode arrays prior to treatment with fluorescent probes. We compared the effect of photobleaching versus established chemical quenchers on the quality of fluorescent staining in formalin-fixed brain tissue of frontotemporal dementia with tau-positive inclusions. Unlike chemical quenchers, which reduced fluorescent probe signals as well as background, photobleaching treatment had no effect on probe fluorescence intensity while it effectively reduced background and lipofuscin fluorescence. The advantages and versatility of photobleaching over established methods are discussed.

High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).

PubMed

Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef

2015-04-08

The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.

Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

PubMed

Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

2017-12-01

Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes

NASA Astrophysics Data System (ADS)

Hussain, Laiq; Karimi, Mohammad; Berg, Alexander; Jain, Vishal; Borgström, Magnus T.; Gustafsson, Anders; Samuelson, Lars; Pettersson, Håkan

2017-12-01

Radial GaInP/AlGaInP nanowire array light-emitting diodes (LEDs) are promising candidates for novel high-efficiency solid state lighting due to their potentially large strain-free active emission volumes compared to planar LEDs. Moreover, by proper tuning of the diameter of the nanowires, the fraction of emitted light extracted can be significantly enhanced compared to that of planar LEDs. Reports so far on radial growth of nanowire LED structures, however, still point to significant challenges related to obtaining defect-free radial heterostructures. In this work, we present evidence of optically active growth-induced defects in a fairly broad energy range in vertically processed radial GaInP/AlGaInP quantum well nanowire array LEDs using a variety of complementary experimental techniques. In particular, we demonstrate strong infrared electroluminescence in a spectral range centred around 1 eV (1.2 μm) in addition to the expected red light emission from the quantum well. Spatially resolved cathodoluminescence studies reveal a patchy red light emission with clear spectral features along the NWs, most likely induced by variations in QW thickness, composition and barriers. Dark areas are attributed to infrared emission generated by competing defect-assisted radiative transitions, or to trapping mechanisms involving non-radiative recombination processes. Possible origins of the defects are discussed.

Novel Strategy for Photopatterning Emissive Polymer Brushes for Organic Light Emitting Diode Applications

PubMed Central

2017-01-01

A light-mediated methodology to grow patterned, emissive polymer brushes with micron feature resolution is reported and applied to organic light emitting diode (OLED) displays. Light is used for both initiator functionalization of indium tin oxide and subsequent atom transfer radical polymerization of methacrylate-based fluorescent and phosphorescent iridium monomers. The iridium centers play key roles in photocatalyzing and mediating polymer growth while also emitting light in the final OLED structure. The scope of the presented procedure enables the synthesis of a library of polymers with emissive colors spanning the visible spectrum where the dopant incorporation, position of brush growth, and brush thickness are readily controlled. The chain-ends of the polymer brushes remain intact, affording subsequent chain extension and formation of well-defined diblock architectures. This high level of structure and function control allows for the facile preparation of random ternary copolymers and red–green–blue arrays to yield white emission. PMID:28691078

Novel Strategy for Photopatterning Emissive Polymer Brushes for Organic Light Emitting Diode Applications.

PubMed

Page, Zachariah A; Narupai, Benjaporn; Pester, Christian W; Bou Zerdan, Raghida; Sokolov, Anatoliy; Laitar, David S; Mukhopadhyay, Sukrit; Sprague, Scott; McGrath, Alaina J; Kramer, John W; Trefonas, Peter; Hawker, Craig J

2017-06-28

A light-mediated methodology to grow patterned, emissive polymer brushes with micron feature resolution is reported and applied to organic light emitting diode (OLED) displays. Light is used for both initiator functionalization of indium tin oxide and subsequent atom transfer radical polymerization of methacrylate-based fluorescent and phosphorescent iridium monomers. The iridium centers play key roles in photocatalyzing and mediating polymer growth while also emitting light in the final OLED structure. The scope of the presented procedure enables the synthesis of a library of polymers with emissive colors spanning the visible spectrum where the dopant incorporation, position of brush growth, and brush thickness are readily controlled. The chain-ends of the polymer brushes remain intact, affording subsequent chain extension and formation of well-defined diblock architectures. This high level of structure and function control allows for the facile preparation of random ternary copolymers and red-green-blue arrays to yield white emission.

GaAs optoelectronic neuron arrays

NASA Technical Reports Server (NTRS)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices

NASA Astrophysics Data System (ADS)

Bao, Xingzhen; Liang, Jingqiu; Liang, Zhongzhu; Wang, Weibiao; Tian, Chao; Qin, Yuxin; Lü, Jinguang

2016-04-01

An integrated high-resolution (individual pixel size 80 μm×80 μm) solid-state self-emissive active matrix programmed with 320×240 micro-light-emitting-diode arrays structure was designed and fabricated on an AlGaInP semiconductor chip using micro electro-mechanical systems, microstructure and semiconductor fabricating techniques. Row pixels share a p-electrode and line pixels share an n-electrode. We experimentally investigated GaAs substrate thickness affects the electrical and optical characteristics of the pixels. For a 150-μm-thick GaAs substrate, the single pixel output power was 167.4 μW at 5 mA, and increased to 326.4 μW when current increase to 10 mA. The device investigated potentially plays an important role in many fields.

Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics.

PubMed

Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G; Kaplan, David L; Omenetto, Fiorenzo G; Huang, Yonggang; Kang, Zhan; Rogers, John A

2010-11-01

Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.

PubMed

Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh; Hiruma, Kenji; Fukui, Takashi

2010-05-12

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.

Study of phase-locked diode laser array and DFB/DBR surface emitting laser diode

NASA Astrophysics Data System (ADS)

Hsin, Wei

New types of phased-array and surface-emitting lasers are designed. The importance and approaches (or structures) of different phased array and surface emitting laser diodes are reviewed. The following are described: (1) a large optical cavity channel substrate planar laser array with layer thickness chirping; (2) a vertical cavity surface emitter with distributed feedback (DFB) optical cavity and a transverse junction buried heterostructure; (3) a microcavity distributed Bragg reflector (DBR) surface emitter; and (4) two surface emitting laser structures which utilized lateral current injection schemes to overcome the problems occurring in the vertical injection scheme.

Inhibition of enteric pathogens using integrated high intensity 405 nm LED on the surface of almonds

USDA-ARS?s Scientific Manuscript database

The disinfecting properties of 405 nm light were investigated against Escherichia coli O157:H7, Salmonella, and their non-pathogenic surrogates inoculated onto the surface of almonds. High intensity monochromatic light was generated from an array of narrow-band 405 nm light emitting diodes (LED). Al...

Inhibition of enteric pathogens and surrogates using integrated, high intensity 405nm led light on the surface of almonds

USDA-ARS?s Scientific Manuscript database

The disinfecting properties of 405 nm light were investigated against Escherichia coli O157:H7, Salmonella, and their non-pathogenic surrogate bacteria on the surface of almonds. High intensity monochromatic blue light (MBL) was generated from an array of narrow-band 405 nm light-emitting diodes (LE...

Effects of Light-Emitting Diode Therapy on Muscle Hypertrophy, Gene Expression, Performance, Damage, and Delayed-Onset Muscle Soreness: Case-control Study with a Pair of Identical Twins.

PubMed

Ferraresi, Cleber; Bertucci, Danilo; Schiavinato, Josiane; Reiff, Rodrigo; Araújo, Amélia; Panepucci, Rodrigo; Matheucci, Euclides; Cunha, Anderson Ferreira; Arakelian, Vivian Maria; Hamblin, Michael R; Parizotto, Nivaldo; Bagnato, Vanderlei

2016-10-01

The aim of this study was to verify how a pair of monozygotic twins would respond to light-emitting diode therapy (LEDT) or placebo combined with a strength-training program during 12 weeks. This case-control study enrolled a pair of male monozygotic twins, allocated randomly to LEDT or placebo therapies. Light-emitting diode therapy or placebo was applied from a flexible light-emitting diode array (λ = 850 nm, total energy = 75 J, t = 15 seconds) to both quadriceps femoris muscles of each twin immediately after each strength training session (3 times/wk for 12 weeks) consisting of leg press and leg extension exercises with load of 80% and 50% of the 1-repetition maximum test, respectively. Muscle biopsies, magnetic resonance imaging, maximal load, and fatigue resistance tests were conducted before and after the training program to assess gene expression, muscle hypertrophy and performance, respectively. Creatine kinase levels in blood and visual analog scale assessed muscle damage and delayed-onset muscle soreness, respectively, during the training program. Compared with placebo, LEDT increased the maximal load in exercise and reduced fatigue, creatine kinase, and visual analog scale. Gene expression analyses showed decreases in markers of inflammation (interleukin 1β) and muscle atrophy (myostatin) with LEDT. Protein synthesis (mammalian target of rapamycin) and oxidative stress defense (SOD2 [mitochondrial superoxide dismutase]) were up-regulated with LEDT, together with increases in thigh muscle hypertrophy. Light-emitting diode therapy can be useful to reduce muscle damage, pain, and atrophy, as well as to increase muscle mass, recovery, and athletic performance in rehabilitation programs and sports medicine.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bierhuizen, Serge J.; Wang, Nanze Patrick; Eng, Gregory W.

An array of housings with housing bodies and lenses is molded, or an array of housing bodies is molded and bonded with lenses to form an array of housings with housing bodies and lenses. Light-emitting diodes (LEDs) are attached to the housings in the array. An array of metal pads may be bonded to the back of the array or insert molded with the housing array to form bond pads on the back of the housings. The array is singulated to form individual LED modules.

Optical Analysis of Power Distribution in Top-Emitting Organic Light Emitting Diodes Integrated with Nanolens Array Using Finite Difference Time Domain.

PubMed

Han, Kyung-Hoon; Park, Young-Sam; Cho, Doo-Hee; Han, Yoonjay; Lee, Jonghee; Yu, Byounggon; Cho, Nam Sung; Lee, Jeong-Ik; Kim, Jang-Joo

2018-06-06

Recently, we have addressed that a formation mechanism of a nanolens array (NLA) fabricated by using a maskless vacuum deposition is explained as the increase in surface tension of organic molecules induced by their crystallization. Here, as another research using finite difference time domain simulations, not electric field intensities but transmitted energies of electromagnetic waves inside and outside top-emitting blue organic light-emitting diodes (TOLEDs), without and with NLAs, are obtained, to easily grasp the effect of NLA formation on the light extraction of TOLEDs. Interestingly, the calculations show that NLA acts as an efficient light extraction structure. With NLA, larger transmitted energies in the direction from emitting layer to air are observed, indicating that NLAs send more light to air otherwise trapped in the devices by reducing the losses by waveguide and absorption. This is more significant for higher refractive index of NLA. Simulation and measurement results are consistent. A successful increase in both light extraction efficiency and color stability of blue TOLEDs, rarely reported before, is accomplished by introducing the highly process-compatible NLA technology using the one-step dry process. Blue TOLEDs integrated with a N, N'-di(1-naphthyl)- N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine NLA with a refractive index of 1.8 show a 1.55-times-higher light extraction efficiency, compared to those without it. In addition, viewing angle characteristics are enhanced and image blurring is reduced, indicating that the manufacturer-adaptable technology satisfies the requirements of highly efficient and color-stable top-emission displays.

Design of optical element combining Fresnel lens with microlens array for uniform light-emitting diode lighting.

PubMed

Wang, Guangzhen; Wang, Lili; Li, Fuli; Kong, Depeng

2012-09-01

One kind of optical element combining Fresnel lens with microlens array is designed simply for LED lighting based on geometrical optics and nonimaging optics. This design method imposes no restriction on the source intensity pattern. The designed element has compact construction and can produce multiple shapes of illumination distribution. Taking square lighting as an example, tolerance analysis is carried out to determine tolerance limits for applying the element in the assembly process. This element can produce on-axis lighting and off-axis lighting.

Low cost batch fabrication of microdevices using ultraviolet light-emitting diode photolithography technique

NASA Astrophysics Data System (ADS)

Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan

2016-01-01

Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.

Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions

NASA Astrophysics Data System (ADS)

Ling, Bo; Zhao, Jun Liang; Sun, Xiao Wei; Tan, Swee Tiam; Kyaw, Aung Ko Ko; Divayana, Yoga; Dong, Zhi Li

2010-07-01

Wide-range color tuning from red to blue was achieved in phosphor-free p+-Si/p-CuAlO2/n-ZnO nanorod light-emitting diodes at room temperature. CuAlO2 films were deposited on p+-Si substrates by sputtering followed by annealing. ZnO nanorods were further grown on the annealed p+-Si/p-CuAlO2 substrates by vapor phase transport. The color of the p-CuAlO2/n-ZnO nanorod array heterojunction electroluminescence depended on the annealing temperature of the CuAlO2 film. With the increase of the annealing temperature from 900 to 1050 °C, the emission showed a blueshift under the same forward bias. The origin of the blueshift is related to the amount of Cu concentration diffused into ZnO.

Side-emitting illuminators using LED sources

NASA Astrophysics Data System (ADS)

Zhao, Feng; Van Derlofske, John F.

2003-11-01

This study investigates illuminators composed of light emitting diode (LED) array sources and side-emitting light guides to provide efficient general illumination. Specifically, new geometries are explored to increase the efficiency of current systems while maintaining desired light distribution. LED technology is already successfully applied in many illumination applications, such as traffic signals and liquid crystal display (LCD) backlighting. It provides energy-efficient, small-package, long-life, and color-adjustable illumination. However, the use of LEDs in general illumination is still in its early stages. Current side-emitting systems typically use a light guide with light sources at one end, an end-cap surface at the other end, and light releasing sidewalls. This geometry introduces efficiency loss that can be as high as 40%. The illuminators analyzed in this study use LED array sources along the longitude of a light guide to increase the system efficiency. These new geometries also provide the freedom of elongating the system without sacrificing system efficiency. In addition, alternative geometries can be used to create white light with monochromatic LED sources. As concluded by this study, the side-emitting illuminators using LED sources gives the possibility of an efficient, distribution-controllable linear lighting system.

Effect of NASA light-emitting diode irradiation on molecular changes for wound healing in diabetic mice.

PubMed

Whelan, Harry T; Buchmann, Ellen V; Dhokalia, Apsara; Kane, Mary P; Whelan, Noel T; Wong-Riley, Margaret T T; Eells, Janis T; Gould, Lisa J; Hammamieh, Rasha; Das, Rina; Jett, Marti

2003-04-01

The purpose of this study was to assess the changes in gene expression of near-infrared light therapy in a model of impaired wound healing. Light-Emitting Diodes (LED), originally developed for NASA plant growth experiments in space, show promise for delivering light deep into tissues of the body to promote wound healing and human tissue growth. In this paper we present the effects of LED treatment on wounds in a genetically diabetic mouse model. Polyvinyl acetal (PVA) sponges were subcutaneously implanted in the dorsum of BKS.Cg-m +/+ Lepr(db) mice. LED treatments were given once daily, and at the sacrifice day, the sponges, incision line and skin over the sponges were harvested and used for RNA extraction. The RNA was subsequently analyzed by cDNA array. Our studies have revealed certain tissue regenerating genes that were significantly upregulated upon LED treatment when compared to the untreated sample. Integrins, laminin, gap junction proteins, and kinesin superfamily motor proteins are some of the genes involved during regeneration process. These are some of the genes that were identified upon gene array experiments with RNA isolated from sponges from the wound site in mouse with LED treatment. We believe that the use of NASA light-emitting diodes (LED) for light therapy will greatly enhance the natural wound healing process, and more quickly return the patient to a preinjury/illness level of activity. This work is supported and managed through the Defense Advanced Research Projects Agency (DARPA) and NASA Marshall Space Flight Center-SBIR Program.

Anatomical features of pepper plants (Capsicum annuum L.) grown under red light-emitting diodes supplemented with blue or far-red light

NASA Technical Reports Server (NTRS)

Schuerger, A. C.; Brown, C. S.; Stryjewski, E. C.

1997-01-01

Pepper plants (Capsicum annuum L. cv., Hungarian Wax) were grown under metal halide (MH) lamps or light-emitting diode (LED) arrays with different spectra to determine the effects of light quality on plant anatomy of leaves and stems. One LED (660) array supplied 90% red light at 660 nm (25nm band-width at half-peak height) and 1% far-red light between 700-800nm. A second LED (660/735) array supplied 83% red light at 660nm and 17% far-red light at 735nm (25nm band-width at half-peak height). A third LED (660/blue) array supplied 98% red light at 660nm, 1% blue light between 350-550nm, and 1% far-red light between 700-800nm. Control plants were grown under broad spectrum metal halide lamps. Plants were gron at a mean photon flux (300-800nm) of 330 micromol m-2 s-1 under a 12 h day-night photoperiod. Significant anatomical changes in stem and leaf morphologies were observed in plants grown under the LED arrays compared to plants grown under the broad-spectrum MH lamp. Cross-sectional areas of pepper stems, thickness of secondary xylem, numbers of intraxylary phloem bundles in the periphery of stem pith tissues, leaf thickness, numbers of choloplasts per palisade mesophyll cell, and thickness of palisade and spongy mesophyll tissues were greatest in peppers grown under MH lamps, intermediate in plants grown under the 660/blue LED array, and lowest in peppers grown under the 660 or 660/735 LED arrays. Most anatomical features of pepper stems and leaves were similar among plants grown under 660 or 660/735 LED arrays. The effects of spectral quality on anatomical changes in stem and leaf tissues of peppers generally correlate to the amount of blue light present in the primary light source.

Anatomical features of pepper plants (Capsicum annuum L.) grown under red light-emitting diodes supplemented with blue or far-red light.

PubMed

Schuerger, A C; Brown, C S; Stryjewski, E C

1997-03-01

Pepper plants (Capsicum annuum L. cv., Hungarian Wax) were grown under metal halide (MH) lamps or light-emitting diode (LED) arrays with different spectra to determine the effects of light quality on plant anatomy of leaves and stems. One LED (660) array supplied 90% red light at 660 nm (25nm band-width at half-peak height) and 1% far-red light between 700-800nm. A second LED (660/735) array supplied 83% red light at 660nm and 17% far-red light at 735nm (25nm band-width at half-peak height). A third LED (660/blue) array supplied 98% red light at 660nm, 1% blue light between 350-550nm, and 1% far-red light between 700-800nm. Control plants were grown under broad spectrum metal halide lamps. Plants were gron at a mean photon flux (300-800nm) of 330 micromol m-2 s-1 under a 12 h day-night photoperiod. Significant anatomical changes in stem and leaf morphologies were observed in plants grown under the LED arrays compared to plants grown under the broad-spectrum MH lamp. Cross-sectional areas of pepper stems, thickness of secondary xylem, numbers of intraxylary phloem bundles in the periphery of stem pith tissues, leaf thickness, numbers of choloplasts per palisade mesophyll cell, and thickness of palisade and spongy mesophyll tissues were greatest in peppers grown under MH lamps, intermediate in plants grown under the 660/blue LED array, and lowest in peppers grown under the 660 or 660/735 LED arrays. Most anatomical features of pepper stems and leaves were similar among plants grown under 660 or 660/735 LED arrays. The effects of spectral quality on anatomical changes in stem and leaf tissues of peppers generally correlate to the amount of blue light present in the primary light source.

LED module with high index lens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bierhuizen, Serge J.; Wang, Nanze Patrick; Eng, Gregory W.

2016-07-05

An array of housings with housing bodies and lenses is molded, or an array of housing bodies is molded and bonded with lenses to form an array of housings with housing bodies and lenses. Light-emitting diodes (LEDs) are attached to the housings in the array. An array of metal pads may be bonded to the back of the array or insert molded with the housing array to form bond pads on the back of the housings. The array is singulated to form individual LED modules.

Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Ko, Rong-Ming; Wang, Shui-Jinn; Chen, Ching-Yi; Wu, Cheng-Han; Lin, Yan-Ru; Lo, Hsin-Ming

2017-04-01

The hydrothermal growth (HTG) of crystalline n-ZnO films on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO film on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ϕ-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO film crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.

Flexible Light Emission Diode Arrays Made of Transferred Si Microwires-ZnO Nanofilm with Piezo-Phototronic Effect Enhanced Lighting.

PubMed

Li, Xiaoyi; Liang, Renrong; Tao, Juan; Peng, Zhengchun; Xu, Qiming; Han, Xun; Wang, Xiandi; Wang, Chunfeng; Zhu, Jing; Pan, Caofeng; Wang, Zhong Lin

2017-04-25

Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch

2014-04-07

We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of themore » top p-GaN layer and the active region, respectively.« less

High efficiency light source using solid-state emitter and down-conversion material

DOEpatents

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

2010-10-26

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array

PubMed Central

Hu, Jinyong; Wang, Hong

2014-01-01

Three-dimensional (3D) backside reflector, compared with flat reflectors, can improve the probability of finding the escape cone for reflecting lights and thus enhance the light-extraction efficiency (LEE) for GaN-based light-emitting diode (LED) chips. A triangle-lattice of microscale SiO2 cone array followed by a 16-pair Ti3O5/SiO2 distributed Bragg reflector (16-DBR) was proposed to be attached on the backside of sapphire substrate, and the light-output enhancement was demonstrated by numerical simulation and experiments. The LED chips with flat reflectors or 3D reflectors were simulated using Monte Carlo ray tracing method. It is shown that the LEE increases as the reflectivity of backside reflector increases, and the light-output can be significantly improved by 3D reflectors compared to flat counterparts. It can also be observed that the LEE decreases as the refractive index of the cone material increases. The 3D 16-DBR patterned by microscale SiO2 cone array benefits large enhancement of LEE. This microscale pattern was prepared by standard photolithography and wet-etching technique. Measurement results show that the 3D 16-DBR can provide 12.1% enhancement of wall-plug efficiency, which is consistent with the simulated value of 11.73% for the enhancement of LEE. PMID:25133262

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

PubMed

Wei, Tongbo; Kong, Qingfeng; Wang, Junxi; Li, Jing; Zeng, Yiping; Wang, Guohong; Li, Jinmin; Liao, Yuanxun; Yi, Futing

2011-01-17

InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices.

A Robust Design Approach to Cost Estimation: Solar Energy for Marine Corps Expeditionary Operations

DTIC Science & Technology

2014-07-14

solutions in such areas as photovoltaic arrays for power harvesting, light emitting diodes (LED) for decreased energy consumption, and improved battery...generation and conversion system that allows Marines to power systems with solar energy. Each GREENS is comprised of eight photovoltaic array panels...renewable power sources such as photovoltaic arrays and wind turbines. The HOMER model has been utilized for years by organizations and companies

Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo

2014-06-15

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 andmore » 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.« less

Bactericidal effects of a high-power, red light-emitting diode on two periodontopathic bacteria in antimicrobial photodynamic therapy in vitro.

PubMed

Umeda, Makoto; Tsuno, Akiko; Okagami, Yoshihide; Tsuchiya, Fumito; Izumi, Yuichi; Ishikawa, Isao

2011-11-01

  Light-emitting diodes have been investigated as new light activators for photodynamic therapy. We investigated the bactericidal effects of high-power, red light-emitting diodes on two periodontopathic bacteria in vitro.   A light-emitting diode (intensity: 1100 mW/cm(2) , peak wavelength: 650 nm) was used to irradiate a bacterial solution for either 10 or 20 s. Bacterial solutions (Porphyromonas gingivalis or Aggregatibacter actinomycetemcomitans) at a concentration of 2.5 × 10(6) c.f.u./mL were mixed with an equal volume of either methylene blue or toluidine blue O (0-20 μg/mL) and added to titer plate wells. The plate wells were irradiated with red light-emitting diode light from a distance of 22 or 40 mm. The contents were diluted, and 50 μL was smeared onto blood agar plates. After 1 week of culturing, bacterial c.f.u. were counted.   The light-emitting diode energy density was estimated to be approximately 4 and 8 J/cm(2) after 10 and 20 s of irradiation, respectively. Red light-emitting diode irradiation for 10 s from a distance of 22 mm, combined with methylene blue at concentrations >10 μg/mL, completely killed Porphyromonas gingivalis and Aggregatibacter actinomycetemcomitans.   High-power, red light-emitting diode irradiation with a low concentration of dye showed effective bactericidal effects against two periodontopathic bacteria. © 2011 Blackwell Publishing Asia Pty Ltd.

Design Considerations for a Water Treatment System Utilizing Ultra-Violet Light Emitting Diodes

DTIC Science & Technology

2014-03-27

DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...the United States. ii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...DISTRIBUTION UNLIMITED. iii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles.

PubMed

Jin, Yuanhao; Li, Qunqing; Li, Guanhong; Chen, Mo; Liu, Junku; Zou, Yuan; Jiang, Kaili; Fan, Shoushan

2014-01-06

The output power of the light from GaN-based light-emitting diodes (LEDs) was enhanced by fabricating gold (Au) nanoparticles on the surface of p-GaN. Quasi-aligned Au nanoparticle arrays were prepared by depositing Au thin film on an aligned suspended carbon nanotube thin film surface and then putting the Au-CNT system on the surface of p-GaN and thermally annealing the sample. The size and position of the Au nanoparticles were confined by the carbon nanotube framework, and no other additional residual Au was distributed on the surface of the p-GaN substrate. The output power of the light from the LEDs with Au nanoparticles was enhanced by 55.3% for an injected current of 100 mA with the electrical property unchanged compared with the conventional planar LEDs. The enhancement may originate from the surface plasmon effect and scattering effect of the Au nanoparticles.

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Auto and hetero-associative memory using a 2-D optical logic gate

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin (Inventor)

1992-01-01

An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.

Computational diffraction tomographic microscopy with transport of intensity equation using a light-emitting diode array

NASA Astrophysics Data System (ADS)

Li, Jiaji; Chen, Qian; Zhang, Jialin; Zuo, Chao

2017-10-01

Optical diffraction tomography (ODT) is an effective label-free technique for quantitatively refractive index imaging, which enables long-term monitoring of the internal three-dimensional (3D) structures and molecular composition of biological cells with minimal perturbation. However, existing optical tomographic methods generally rely on interferometric configuration for phase measurement and sophisticated mechanical systems for sample rotation or beam scanning. Thereby, the measurement is suspect to phase error coming from the coherent speckle, environmental vibrations, and mechanical error during data acquisition process. To overcome these limitations, we present a new ODT technique based on non-interferometric phase retrieval and programmable illumination emitting from a light-emitting diode (LED) array. The experimental system is built based on a traditional bright field microscope, with the light source replaced by a programmable LED array, which provides angle-variable quasi-monochromatic illumination with an angular coverage of +/-37 degrees in both x and y directions (corresponding to an illumination numerical aperture of ˜ 0.6). Transport of intensity equation (TIE) is utilized to recover the phase at different illumination angles, and the refractive index distribution is reconstructed based on the ODT framework under first Rytov approximation. The missing-cone problem in ODT is addressed by using the iterative non-negative constraint algorithm, and the misalignment of the LED array is further numerically corrected to improve the accuracy of refractive index quantification. Experiments on polystyrene beads and thick biological specimens show that the proposed approach allows accurate refractive index reconstruction while greatly reduced the system complexity and environmental sensitivity compared to conventional interferometric ODT approaches.

Optical diffraction tomography microscopy with transport of intensity equation using a light-emitting diode array

NASA Astrophysics Data System (ADS)

Li, Jiaji; Chen, Qian; Zhang, Jialin; Zhang, Zhao; Zhang, Yan; Zuo, Chao

2017-08-01

Optical diffraction tomography (ODT) is an effective label-free technique for quantitatively refractive index imaging, which enables long-term monitoring of the internal three-dimensional (3D) structures and molecular composition of biological cells with minimal perturbation. However, existing optical tomographic methods generally rely on interferometric configuration for phase measurement and sophisticated mechanical systems for sample rotation or beam scanning. Thereby, the measurement is suspect to phase error coming from the coherent speckle, environmental vibrations, and mechanical error during data acquisition process. To overcome these limitations, we present a new ODT technique based on non-interferometric phase retrieval and programmable illumination emitting from a light-emitting diode (LED) array. The experimental system is built based on a traditional bright field microscope, with the light source replaced by a programmable LED array, which provides angle-variable quasi-monochromatic illumination with an angular coverage of ±37 degrees in both x and y directions (corresponding to an illumination numerical aperture of ∼0.6). Transport of intensity equation (TIE) is utilized to recover the phase at different illumination angles, and the refractive index distribution is reconstructed based on the ODT framework under first Rytov approximation. The missing-cone problem in ODT is addressed by using the iterative non-negative constraint algorithm, and the misalignment of the LED array is further numerically corrected to improve the accuracy of refractive index quantification. Experiments on polystyrene beads and thick biological specimens show that the proposed approach allows accurate refractive index reconstruction while greatly reduced the system complexity and environmental sensitivity compared to conventional interferometric ODT approaches.

High-speed non-contact measuring apparatus for gauging the thickness of moving sheet material

DOEpatents

Grann, Eric B.; Holcomb, David E.

2000-01-01

An optical measurement apparatus is provided for measuring the thickness of a moving sheet material (18). The apparatus has a pair of optical measurement systems (21, 31) attached to opposing surfaces (14, 16) of a rigid support structure (10). A pair of high-power laser diodes (20,30) and a pair of photodetector arrays (22,32) are attached to the opposing surfaces. Light emitted from the laser diodes is reflected off of the sheet material surfaces (17, 19) and received by the respective photodetector arrays. An associated method for implementing the apparatus is also provided.

77 FR 75446 - Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-784] Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant the Joint Motion To Terminate the... sale within the United States after importation of certain light-emitting diodes and products...

Spin-polarized light-emitting diodes based on organic bipolar spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

PubMed

Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

2018-03-01

Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

NASA Astrophysics Data System (ADS)

Tian, Chao; Wang, Weibiao; Liang, Jingqiu; Liang, Zhongzhu; Qin, Yuxin; Lv, Jinguang

2015-04-01

An array of 320 × 240 micro-light-emitting diodes (micro-LEDs) based on an AlGaInP epitaxial wafer and with a unit size of 100 µm×100 µm was designed and fabricated. The optimum width of the isolation groove between adjacent light-emitting units was determined based on a compromise between full isolation of each LED and maximization of the light emitting area, and was found to be 20 µm. The grooves were filled with a mixed Si granule-polyurethane composite medium, because this type of insulating material can reflect part of the emitted light from the sidewall to the window layer in each light-emitting unit, and could thus improve lighting output efficiency. The 10-µm-wide square-circle anode was designed to increase the light emitting area while simultaneously being simple to fabricate. The device current used was in the 0.42-1.06 mA range to guarantee internal quantum efficiency of more than 85%, with a corresponding voltage range of 2-2.3 V. The layered temperature distribution in a single unit was simulated under a drive voltage of 2.2 V, and the maximum device temperature was 341 K. The micro-opto-electro-mechanical systems (MOEMS) technology-based fabrication process, experimental images of the device and device test results are presented here.

Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Chao; University of Chinese Academy of Sciences, Beijing 100049; Wang, Weibiao, E-mail: wangwbcn@163.com

An array of 320 × 240 micro-light-emitting diodes (micro-LEDs) based on an AlGaInP epitaxial wafer and with a unit size of 100 µm×100 µm was designed and fabricated. The optimum width of the isolation groove between adjacent light-emitting units was determined based on a compromise between full isolation of each LED and maximization of the light emitting area, and was found to be 20 µm. The grooves were filled with a mixed Si granule-polyurethane composite medium, because this type of insulating material can reflect part of the emitted light from the sidewall to the window layer in each light-emitting unit,more » and could thus improve lighting output efficiency. The 10-µm-wide square-circle anode was designed to increase the light emitting area while simultaneously being simple to fabricate. The device current used was in the 0.42–1.06 mA range to guarantee internal quantum efficiency of more than 85%, with a corresponding voltage range of 2–2.3 V. The layered temperature distribution in a single unit was simulated under a drive voltage of 2.2 V, and the maximum device temperature was 341 K. The micro-opto-electro-mechanical systems (MOEMS) technology-based fabrication process, experimental images of the device and device test results are presented here.« less

Structurally Integrated Photoluminescent Chemical and Biological Sensors: An Organic Light-Emitting Diode-Based Platform

NASA Astrophysics Data System (ADS)

Shinar, J.; Shinar, R.

The chapter describes the development, advantages, challenges, and potential of an emerging, compact photoluminescence-based sensing platform for chemical and biological analytes, including multiple analytes. In this platform, the excitation source is an array of organic light-emitting device (OLED) pixels that is structurally integrated with the sensing component. Steps towards advanced integration with additionally a thin-film-based photodetector are also described. The performance of the OLED-based sensing platform is examined for gas-phase and dissolved oxygen, glucose, lactate, ethanol, hydrazine, and anthrax lethal factor.

Combatant Eye Protection: An Introduction to the Blue Light Hazard

DTIC Science & Technology

2015-12-01

visible solar radiation (i.e., blue light ), as well as from light - emitting diode (LED)-generated radiant energy remains a questionable factor under...Garcia, M., Picaud, S., Attia D. 2011. Light - emitting diodes (LED) for domestic lighting : Any risks for the eye?. Progress in retinal and eye research...C., Sliney, D. H., Rollag, M., D., Hanifin, J. P., and Brainard, G. C. 2011. Blue light from light - emitting diodes elicits a dose-dependent

Organic light emitting diode with light extracting electrode

DOEpatents

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

PubMed

Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon

2008-10-01

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

Photobiomodulation partially rescues visual cortical neurons from cyanide-induced apoptosis.

PubMed

Liang, H L; Whelan, H T; Eells, J T; Meng, H; Buchmann, E; Lerch-Gaggl, A; Wong-Riley, M

2006-05-12

Near-infrared light via light-emitting diode treatment has documented therapeutic effects on neurons functionally inactivated by tetrodotoxin or methanol intoxication. Light-emitting diode pretreatment also reduced potassium cyanide-induced cell death, but the mode of death via the apoptotic or necrotic pathway was unclear. The current study tested our hypothesis that light-emitting diode rescues neurons from apoptotic cell death. Primary neuronal cultures from postnatal rat visual cortex were pretreated with light-emitting diode for 10 min at a total energy density of 30 J/cm2 before exposing to potassium cyanide for 28 h. With 100 or 300 microM potassium cyanide, neurons died mainly via the apoptotic pathway, as confirmed by electron microscopy, Hoechst 33258, single-stranded DNA, Bax, and active caspase-3. In the presence of caspase inhibitor I, the percentage of apoptotic cells in 300microM potassium cyanide was significantly decreased. Light-emitting diode pretreatment reduced apoptosis from 36% to 17.9% (100 microM potassium cyanide) and from 58.9% to 39.6% (300 microM potassium cyanide), representing a 50.3% and 32.8% reduction, respectively. Light-emitting diode pretreatment significantly decreased the expression of caspase-3 elicited by potassium cyanide. It also reversed the potassium cyanide-induced increased expression of Bax and decreased expression of Bcl-2 to control levels. Moreover, light-emitting diode decreased the intensity of 5-(and -6) chloromethy-2', 7-dichlorodihydrofluorescein diacetate acetyl ester, a marker of reactive oxygen species, in neurons exposed to 300 microM potassium cyanide. These results indicate that light-emitting diode pretreatment partially protects neurons against cyanide-induced caspase-mediated apoptosis, most likely by decreasing reactive oxygen species production, down-regulating pro-apoptotic proteins and activating anti-apoptotic proteins, as well as increasing energy metabolism in neurons as reported previously.

Flexible organic light-emitting diodes with enhanced light out-coupling efficiency fabricated on a double-sided nanotextured substrate.

PubMed

Luo, Yu; Wang, Chunhui; Wang, Li; Ding, Yucheng; Li, Long; Wei, Bin; Zhang, Jianhua

2014-07-09

High-efficiency organic light-emitting diodes (OLEDs) have generated tremendous research interest. One of the exciting possibilities of OLEDs is the use of flexible plastic substrates, which unfortunately have a mismatching refractive index compared with the conventional ITO anode and the air. To unlock the light loss on flexible plastic, we report a high-efficiency flexible OLED directly fabricated on a double-sided nanotextured polycarbonate substrate by thermal nanoimprint lithography. The template for the nanoimprint process is a replicate from a silica arrayed with nanopillars and fabricated by ICP etching through a SiO2 colloidal spheres mask. It has been shown that with the internal quasi-periodical scattering gratings the efficiency enhancement can reach 50% for a green light OLED, and with an external antireflection structure, the normal transmittance is increased from 89% to 94% for paraboloid-like pillars. The OLED directly fabricated on the double-sided nanotextured polycarbonate substrate has reached an enhancing factor of ∼2.8 for the current efficiency.

Photosensitive biosensor array system using optical addressing without an addressing circuit on array biochips

NASA Astrophysics Data System (ADS)

Ahn, Chang-Geun; Ah, Chil Seong; Kim, Tae-Youb; Park, Chan Woo; Yang, Jong-Heon; Kim, Ansoon; Sung, Gun Yong

2010-09-01

This paper introduces a photosensitive biosensor array system with a simple photodiode array that detects photocurrent changes caused by reactions between probe and target molecules. Using optical addressing, the addressing circuit on the array chip is removed for low-cost application, and real cell addressing is achieved using an externally located computer-controllable light-emitting diode array module. The fabricated biosensor array chip shows a good dynamic range of 1-100 ng/mL under prostate-specific antigen detection, with an on-chip resolution of roughly 1 ng/mL.

Perovskite Materials for Light-Emitting Diodes and Lasers.

PubMed

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A simple and cost-effective molecular diagnostic system and DNA probes synthesized by light emitting diode photolithography

NASA Astrophysics Data System (ADS)

Oleksandrov, Sergiy; Kwon, Jung Ho; Lee, Ki-chang; Sujin-Ku; Paek, Mun Cheol

2014-09-01

This work introduces a novel chip to be used in the future as a simple and cost-effective method for creating DNA arrays using light emission diode (LED) photolithography. The DNA chip platform contains 24 independent reaction sites, which allows for the testing of a corresponding amount of patients' samples in hospital. An array of commercial UV LEDs and lens systems was combined with a microfluidic flow system to provide patterning of 24 individual reaction sites, each with 64 independent probes. Using the LED array instead of conventional laser exposure systems or micro-mirror systems significantly reduces the cost of equipment. The microfluidic system together with microfluidic flow cells drastically reduces the amount of used reagents, which is important due to the high cost of commercial reagents. The DNA synthesis efficiency was verified by fluorescence labeling and conventional hybridization.

Modeling the radiation pattern of LEDs.

PubMed

Moreno, Ivan; Sun, Ching-Cherng

2008-02-04

Light-emitting diodes (LEDs) come in many varieties and with a wide range of radiation patterns. We propose a general, simple but accurate analytic representation for the radiation pattern of the light emitted from an LED. To accurately render both the angular intensity distribution and the irradiance spatial pattern, a simple phenomenological model takes into account the emitting surfaces (chip, chip array, or phosphor surface), and the light redirected by both the reflecting cup and the encapsulating lens. Mathematically, the pattern is described as the sum of a maximum of two or three Gaussian or cosine-power functions. The resulting equation is widely applicable for any kind of LED of practical interest. We accurately model a wide variety of radiation patterns from several world-class manufacturers.

Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.

PubMed

Kwak, Joon Seop; Song, J O; Seong, T Y; Kim, B I; Cho, J; Sone, C; Park, Y

2006-11-01

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.

In vitro and in vivo Efficacy of New Blue Light Emitting Diode Phototherapy Compared to Conventional Halogen Quartz Phototherapy for Neonatal Jaundice

PubMed Central

Chang, Yun Sil; Hwang, Jong Hee; Kwon, Hyuk Nam; Choi, Chang Won; Ko, Sun Young; Park, Won Soon; Shin, Son Moon

2005-01-01

High intensity light emitting diodes (LEDs) are being studied as possible light sources for the phototherapy of neonatal jaundice, as they can emit high intensity light of narrow wavelength band in the blue region of the visible light spectrum corresponding to the spectrum of maximal bilirubin absorption. We developed a prototype blue gallium nitride LED phototherapy unit with high intensity, and compared its efficacy to commercially used halogen quartz phototherapy device by measuring both in vitro and in vivo bilirubin photodegradation. The prototype device with two focused arrays, each with 500 blue LEDs, generated greater irradiance than the conventional device tested. The LED device showed a significantly higher efficacy of bilirubin photodegradation than the conventional phototherapy in both in vitro experiment using microhematocrit tubes (44±7% vs. 35±2%) and in vivo experiment using Gunn rats (30±9% vs. 16±8%). We conclude that high intensity blue LED device was much more effective than conventional phototherapy of both in vitro and in vivo bilirubin photodegradation. Further studies will be necessary to prove its clinical efficacy. PMID:15716604

Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolodin, Boris; Deshpande, Anirudha R

A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

Crystallization-assisted nano-lens array fabrication for highly efficient and color stable organic light emitting diodes.

PubMed

Park, Young-Sam; Han, Kyung-Hoon; Kim, Jehan; Cho, Doo-Hee; Lee, Jonghee; Han, Yoonjay; Lim, Jong Tae; Cho, Nam Sung; Yu, Byounggon; Lee, Jeong-Ik; Kim, Jang-Joo

2017-01-07

To date, all deposition equipment has been developed to produce planar films. Thus lens arrays with a lens diameter of <1 mm have been manufactured by combining deposition with other technologies, such as masks, surface treatment, molding etc. Furthermore, a nano-lens array (NLA) with a sufficiently small lens diameter (<1 μm) is necessary to avoid image quality degradation in high resolution displays. In this study, an organic NLA made using a conventional deposition technique - without combining with other techniques - is reported. Very interestingly, grazing-incidence small-angle X-ray scattering (GI-SAXS) experiments indicate that the NLA is formed by the crystallization of organic molecules and the resulting increase in surface tension. The lens diameter can be tuned for use with any kind of light by controlling the process parameters. As an example of their potential applications, we use NLAs as a light extraction film for organic light emitting diodes (OLEDs). The NLA is integrated by directly depositing it on the top electrode of a collection of OLEDs. This is a dry process, meaning that it is fully compatible with the current OLED production process. Devices with NLAs exhibited a light extraction efficiency 1.5 times higher than devices without, which corresponds well with simulation results. The simulations show that this high efficiency is due to the reduction of the guided modes by scattering at the NLA. The NLAs also reduce image blurring, indicating that they increase color stability.

High power VCSELs for miniature optical sensors

NASA Astrophysics Data System (ADS)

Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

2010-02-01

Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

Efficient photochemical generation of peroxycarboxylic nitric anhydrides with ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Rider, N. D.; Taha, Y. M.; Odame-Ankrah, C. A.; Huo, J. A.; Tokarek, T. W.; Cairns, E.; Moussa, S. G.; Liggio, J.; Osthoff, H. D.

2015-07-01

Photochemical sources of peroxycarboxylic nitric anhydrides (PANs) are utilized in many atmospheric measurement techniques for calibration or to deliver an internal standard. Conventionally, such sources rely on phosphor-coated low-pressure mercury (Hg) lamps to generate the UV light necessary to photo-dissociate a dialkyl ketone (usually acetone) in the presence of a calibrated amount of nitric oxide (NO) and oxygen (O2). In this manuscript, a photochemical PAN source in which the Hg lamp has been replaced by arrays of ultraviolet light-emitting diodes (UV-LEDs) is described. The output of the UV-LED source was analyzed by gas chromatography (PAN-GC) and thermal dissociation cavity ring-down spectroscopy (TD-CRDS). Using acetone, diethyl ketone (DIEK), diisopropyl ketone (DIPK), or di-n-propyl ketone (DNPK), respectively, the source produces peroxyacetic (PAN), peroxypropionic (PPN), peroxyisobutanoic (PiBN), or peroxy-n-butanoic nitric anhydride (PnBN) from NO in high yield (> 90 %). Box model simulations with a subset of the Master Chemical Mechanism (MCM) were carried out to rationalize product yields and to identify side products. The present work demonstrates that UV-LED arrays are a viable alternative to current Hg lamp setups.

Demonstrating the Light-Emitting Diode.

ERIC Educational Resources Information Center

Johnson, David A.

1995-01-01

Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

Polarization effects associated with thermal processing of HY-80 structural steel using high-power laser diode array

NASA Astrophysics Data System (ADS)

Wu, Sheldon S. Q.; Baker, Bradford W.; Rotter, Mark D.; Rubenchik, Alexander M.; Wiechec, Maxwell E.; Brown, Zachary M.; Beach, Raymond J.; Matthews, Manyalibo J.

2017-12-01

Localized heating of roughened steel surfaces using highly divergent laser light emitted from high-power laser diode arrays was experimentally demonstrated and compared with theoretical predictions. Polarization dependence was analyzed using Fresnel coefficients to understand the laser-induced temperature rise of HY-80 steel plates under 383- to 612-W laser irradiation. Laser-induced, transient temperature distributions were directly measured using bulk thermocouple probes and thermal imaging. Finite-element analysis yielded quantitative assessment of energy deposition and heat transport in HY-80 steel using absorptivity as a tuning parameter. The extracted absorptivity values ranged from 0.62 to 0.75 for S-polarized and 0.63 to 0.85 for P-polarized light, in agreement with partially oxidized iron surfaces. Microstructural analysis using electron backscatter diffraction revealed a heat affected zone for the highest temperature conditions (612 W, P-polarized) as evidence of rapid quenching and an austenite to martensite transformation. The efficient use of diode arrays for laser-assisted advanced manufacturing technologies, such as hybrid friction stir welding, is discussed.

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles

PubMed Central

2014-01-01

The output power of the light from GaN-based light-emitting diodes (LEDs) was enhanced by fabricating gold (Au) nanoparticles on the surface of p-GaN. Quasi-aligned Au nanoparticle arrays were prepared by depositing Au thin film on an aligned suspended carbon nanotube thin film surface and then putting the Au-CNT system on the surface of p-GaN and thermally annealing the sample. The size and position of the Au nanoparticles were confined by the carbon nanotube framework, and no other additional residual Au was distributed on the surface of the p-GaN substrate. The output power of the light from the LEDs with Au nanoparticles was enhanced by 55.3% for an injected current of 100 mA with the electrical property unchanged compared with the conventional planar LEDs. The enhancement may originate from the surface plasmon effect and scattering effect of the Au nanoparticles. PMID:24393473

Compact quantum random number generator based on superluminescent light-emitting diodes

NASA Astrophysics Data System (ADS)

Wei, Shihai; Yang, Jie; Fan, Fan; Huang, Wei; Li, Dashuang; Xu, Bingjie

2017-12-01

By measuring the amplified spontaneous emission (ASE) noise of the superluminescent light emitting diodes, we propose and realize a quantum random number generator (QRNG) featured with practicability. In the QRNG, after the detection and amplification of the ASE noise, the data acquisition and randomness extraction which is integrated in a field programmable gate array (FPGA) are both implemented in real-time, and the final random bit sequences are delivered to a host computer with a real-time generation rate of 1.2 Gbps. Further, to achieve compactness, all the components of the QRNG are integrated on three independent printed circuit boards with a compact design, and the QRNG is packed in a small enclosure sized 140 mm × 120 mm × 25 mm. The final random bit sequences can pass all the NIST-STS and DIEHARD tests.

User-interactive electronic skin for instantaneous pressure visualization.

PubMed

Wang, Chuan; Hwang, David; Yu, Zhibin; Takei, Kuniharu; Park, Junwoo; Chen, Teresa; Ma, Biwu; Javey, Ali

2013-10-01

Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli. Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic demonstration where three distinct electronic components--thin-film transistor, pressure sensor and OLED arrays--are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.

A Robust Design Approach to Cost Estimation: Solar Energy for Marine Corps Expeditionary Operations

DTIC Science & Technology

2014-04-30

areas as photovoltaic arrays for power harvesting, light emitting diodes (LED) for decreased energy consumption, and improved battery and smart power ...conversion system that allows Marines to power systems with solar energy. Each GREENS is comprised of eight photovoltaic array panels, four high-energy...Brandon Newell conducted an experiment where he assessed the capabilities of the HOMER model in forecasting the power output of a solar panel at the

Effect of interface voids on electroluminescence colors for ZnO microdisk/p-GaN heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin; Jeong, Junseok; Kim, Jong Chan; Kim, Yong-Jin; Jeong, Hu Young; Hong, Young Joon

2017-10-01

This study investigates the influence of voids on the electroluminescence (EL) emission color of ZnO microdisk/p-GaN heterojunction light-emitting diodes (LEDs). For this study, position-controlled microdisk arrays were fabricated on patterned p-GaN via wet chemical epitaxy of ZnO, and specifically, the use of trisodium citrate dihydrate (TCD) yielded high-density voids at the bottom of the microdisk. Greenish yellow or whitish blue EL was emitted from the microdisk LEDs formed with or without TCD, respectively, at reverse-bias voltages. Such different EL colors were found to be responsible for the relative EL intensity ratio between indigo and yellow emission peaks, which were originated from radiative recombination at p-GaN and ZnO, respectively. The relative EL intensity between dichromatic emissions is discussed in terms of (i) junction edge effect provoked by interfacial voids and (ii) electron tunneling probability depending on the depletion layer geometry.

New yellow Ba 0.93Eu 0.07Al 2O 4 phosphor for warm-white light-emitting diodes through single-emitting-center conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Budai, John D.; Liu, Feng

2013-01-01

Phosphor-converted white light-emitting diodes for indoor illumination need to be warm-white (i.e., correlated color temperature <4000 K) with good color rendition (i.e., color rendering index >80). However, no single-phosphor, single-emitting-center-converted white light-emitting diodes can simultaneously satisfy the color temperature and rendition requirements due to the lack of sufficient red spectral component in the phosphors’ emission spectrum. Here, we report a new yellow Ba 0.93Eu 0.07Al 2O 4 phosphor that has a new orthorhombic lattice structure and exhibits a broad yellow photoluminescence band with sufficient red spectral component. Warm-white emissions with correlated color temperature <4000 K and color rendering index >80more » were readily achieved when combining the Ba 0.93Eu 0.07Al 2O 4 phosphor with a blue light-emitting diode (440–470 nm). This study demonstrates that warm-white light-emitting diodes with high color rendition (i.e., color rendering index >80) can be achieved based on single-phosphor, single-emitting-center conversion.« less

Visual Electricity Demonstrator

NASA Astrophysics Data System (ADS)

Lincoln, James

2017-09-01

The Visual Electricity Demonstrator (VED) is a linear diode array that serves as a dynamic alternative to an ammeter. A string of 48 red light-emitting diodes (LEDs) blink one after another to create the illusion of a moving current. Having the current represented visually builds an intuitive and qualitative understanding about what is happening in a circuit. In this article, I describe several activities for this device and explain how using this technology in the classroom can enhance the understanding and appreciation of physics.

Evaluation of light-emitting diode beacon light fixtures.

DOT National Transportation Integrated Search

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Efficient photochemical generation of peroxycarboxylic nitric anhydrides with ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Rider, N. D.; Taha, Y. M.; Odame-Ankrah, C. A.; Huo, J. A.; Tokarek, T. W.; Cairns, E.; Moussa, S. G.; Liggio, J.; Osthoff, H. D.

2015-01-01

Photochemical sources of peroxycarboxylic nitric anhydrides (PANs) are utilized in many atmospheric measurement techniques for calibration or to deliver an internal standard. Conventionally, such sources rely on phosphor-coated low-pressure mercury (Hg) lamps to generate the UV light necessary to photo-dissociate a dialkyl ketone (usually acetone) in the presence of a calibrated amount of nitric oxide (NO) and oxygen (O2). In this manuscript, a photochemical PAN source in which the Hg lamp has been replaced by arrays of ultraviolet light-emitting diodes (UV-LEDs) is described. The output of the UV-LED source was analyzed by gas chromatography (PAN-GC) and thermal dissociation cavity ring-down spectroscopy (TD-CRDS). Using acetone, diethyl ketone (DIEK), diisopropyl ketone (DIPK), or di-n-propyl ketone (DNPK), respectively, the source produces peroxyacetic (PAN), peroxypropionic (PPN), peroxyisobutanoic (PiBN), or peroxy-n-butanoic nitric anhydride (PnBN) from NO in high yield (> 90%). Box model simulations with a subset of the Master Chemical Mechanism (MCM) were carried out to rationalize products yields and to identify side products. The use of UV-LED arrays offers many advantages over conventional Hg lamp setups, including greater light output over a narrower wavelength range, lower power consumption, and minimal generation of heat.

Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

NASA Astrophysics Data System (ADS)

Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

2016-02-01

Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

Arrays of microscopic organic LEDs for high-resolution optogenetics

PubMed Central

Steude, Anja; Witts, Emily C.; Miles, Gareth B.; Gather, Malte C.

2016-01-01

Optogenetics is a paradigm-changing new method to study and manipulate the behavior of cells with light. Following major advances of the used genetic constructs over the last decade, the light sources required for optogenetic control are now receiving increased attention. We report a novel optogenetic illumination platform based on high-density arrays of microscopic organic light-emitting diodes (OLEDs). Because of the small dimensions of each array element (6 × 9 μm2) and the use of ultrathin device encapsulation, these arrays enable illumination of cells with unprecedented spatiotemporal resolution. We show that adherent eukaryotic cells readily proliferate on these arrays, and we demonstrate specific light-induced control of the ionic current across the membrane of individual live cells expressing different optogenetic constructs. Our work paves the way for the use of OLEDs for cell-specific optogenetic control in cultured neuronal networks and for acute brain slices, or as implants in vivo. PMID:27386540

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

PubMed

Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

2015-04-06

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

Evaluation of light-emitting diode beacon light fixtures : final report.

DOT National Transportation Integrated Search

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots.

PubMed

Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G

2015-12-01

Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.

Organic light emitting diode with surface modification layer

DOEpatents

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative quenching (improved internal quantum efficiency) and improvement in light extraction (improved outcoupling efficiency). Furthermore, the electrical model is used to construct a positional radiative efficiency map that when combined with the optical enhancement reveals the overall external quantum efficiency enhancement.

Phototoxic action of light emitting diode in the in vitro viability of Trichophyton rubrum.

PubMed

Amorim, José Cláudio Faria; Soares, Betania Maria; Alves, Orley Araújo; Ferreira, Marcus Vinícius Lucas; Sousa, Gerdal Roberto; Silveira, Lívio de Barros; Piancastelli, André Costa Cruz; Pinotti, Marcos

2012-01-01

Trichophyton rubrum is the most common agent of superficial mycosis of the skin and nails causing long lasting infections and high recurrence rates. Current treatment drawbacks involve topical medications not being able to reach the nail bed at therapeutic concentrations, systemic antifungal drugs failing to eradicate the fungus before the nails are renewed, severe side effects and selection of resistant fungal isolates. Photodynamic therapy (PDT) has been a promising alternative to conventional treatments. This study evaluated the in vitro effectiveness of toluidine blue O (TBO) irradiated by Light emitting diode (LED) in the reduction of T. rubrum viability. The fungal inoculums' was prepared and exposed to different TBO concentrations and energy densities of Light emitting diode for evaluate the T. rubrum sensibility to PDT and production effect fungicidal after photodynamic treatment. In addition, the profiles of the area and volume of the irradiated fungal suspensions were also investigated. A small reduction, in vitro, of fungal cells was observed after exposition to 100 µM toluidine blue O irradiated by 18 J/cm² Light emitting diode. Fungicidal effect occurred after 25 µM toluidine blue O irradiation by Light emitting diode with energy density of 72 J/cm². The analysis showed that the area and volume irradiated by the Light emitting diode were 52.2 mm² and 413.70 mm³, respectively. The results allowed to conclude that Photodynamic therapy using Light emitting diode under these experimental conditions is a possible alternative approach to inhibit in vitro T. rubrum and may be a promising new treatment for dermatophytosis caused by this fungus.

Reshaping Light-Emitting Diodes To Increase External Efficiency

NASA Technical Reports Server (NTRS)

Rogowski, Robert; Egalon, Claudio

1995-01-01

Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

Assessment of the performance of light-emitting diode roadway lighting technology.

DOT National Transportation Integrated Search

2015-10-01

This study, championed by the Virginia Department of Transportation (VDOT) Traffic Engineering : Division, involved a thorough investigation of light-emitting diode (LED) roadway lighting technology by : testing six types of roadway luminaires (inclu...

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

ERIC Educational Resources Information Center

Wagner, Eugene P., II

2016-01-01

A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

Linear array optical edge sensor

NASA Technical Reports Server (NTRS)

Bejczy, Antal K. (Inventor); Primus, Howard C. (Inventor)

1987-01-01

A series of independent parallel pairs of light emitting and detecting diodes for a linear pixel array, which is laterally positioned over an edge-like discontinuity in a workpiece to be scanned, is disclosed. These independent pairs of light emitters and detectors sense along intersecting pairs of separate optical axes. A discontinuity, such as an edge in the sensed workpiece, reflects a detectable difference in the amount of light from that discontinuity in comparison to the amount of light that is reflected on either side of the discontinuity. A sequentially sychronized clamping and sampling circuit detects that difference as an electrical signal which is recovered by circuitry that exhibits an improved signal-to-noise capability for the system.

Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Junseok; Choi, Ji Eun; Hong, Young Joon, E-mail: yjhong@sejong.ac.kr

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunnelingmore » probability determined by wire/film junction geometry and size.« less

Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Jeong, Junseok; Choi, Ji Eun; Kim, Yong-Jin; Hwang, Sunyong; Kim, Sung Kyu; Kim, Jong Kyu; Jeong, Hu Young; Hong, Young Joon

2016-09-01

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p-n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

Integrated ultrasonic particle positioning and low excitation light fluorescence imaging

NASA Astrophysics Data System (ADS)

Bernassau, A. L.; Al-Rawhani, M.; Beeley, J.; Cumming, D. R. S.

2013-12-01

A compact hybrid system has been developed to position and detect fluorescent micro-particles by combining a Single Photon Avalanche Diode (SPAD) imager with an acoustic manipulator. The detector comprises a SPAD array, light-emitting diode (LED), lenses, and optical filters. The acoustic device is formed of multiple transducers surrounding an octagonal cavity. By stimulating pairs of transducers simultaneously, an acoustic landscape is created causing fluorescent micro-particles to agglomerate into lines. The fluorescent pattern is excited by a low power LED and detected by the SPAD imager. Our technique combines particle manipulation and visualization in a compact, low power, portable setup.

Method and apparatus for improving the performance of light emitting diodes

DOEpatents

Lowery, Christopher H.; McElfresh, David K.; Burchet, Steve; Adolf, Douglas B.; Martin, James

1996-01-01

A method for increasing the resistance of a light emitting diode and other semiconductor devices to extremes of temperature is disclosed. During the manufacture of the light emitting diode, a liquid coating is applied to the light emitting die after the die has been placed in its lead frame. After the liquid coating has been placed on the die and its lead frames, a thermosetting encapsulant material is placed over the coating. The operation that cures the thermosetting material leaves the coating liquid intact. As the die and the encapsulant expand and contract at different rates with respect to changes in temperature, and as in known light emitting diodes the encapsulating material adheres to the die and lead frames, this liquid coating reduces the stresses that these different rates of expansion and contraction normally cause by eliminating the adherence of the encapsulating material to the die and frame.

System for determining position of normal shock in supersonic flow

NASA Technical Reports Server (NTRS)

Iverson, Jr., Donald G. (Inventor); Daiber, Troy D. (Inventor)

1991-01-01

Light from a plurality of light emitting diodes is transmitted through optical cables (12) to a lens system. The lenses (56, 58) expand and collimate the light and project it in a sheet (16) across the supersonic inlet of an aircraft power plant perpendicular to incoming airflow. A normal shock bends a portion of the sheet of light (16). A linear array of a multiplicity of optical fiber ends collects discrete samples of light. The samples are processed and compared to a predetermined profile to determine the shock location.

Organic electrophosphorescence device having interfacial layers

DOEpatents

Choulis, Stelios A.; Mathai, Mathew; Choong, Vi-En; So, Franky

2010-08-10

Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

Preparing nano-hole arrays by using porous anodic aluminum oxide nano-structural masks for the enhanced emission from InGaN/GaN blue light-emitting diodes

NASA Astrophysics Data System (ADS)

Nguyen, Hoang-Duy; Nguyen, Hieu Pham Trung; Lee, Jae-jin; Mho, Sun-Il

2012-12-01

We report on the achievement of the enhanced cathodoluminescence (CL) from InGaN/GaN light-emitting diodes (LEDs) by using roughening surface. Nanoporous anodic aluminum oxide (AAO) mask was utilized to form nano-hole arrays on the surface of InGaN/GaN LEDs. AAO membranes with ordered hexagonal structures were fabricated from aluminum foils by a two-step anodization method. The average pore densities of ˜1.0 × 1010 cm-2 and 3.0 × 1010 cm-2 were fabricated with the constant anodization voltages of 25 and 40 V, respectively. Anodic porous alumina film with a thickness of ˜600 nm has been used as a mask for the induced couple plasma etching process to fabricate nano-hole arrays on the LED surface. Diameter and depth of nano-holes can be controlled by varying the etching duration and/or the diameter of AAO membranes. Due to the reduction of total internal reflection obtained in the patterned samples, we have observed that the cathodoluminescence intensity of LEDs with nanoporous structures is increased up to eight times compared to that of samples without using nanoporous structure.

Test apparatus for locating shorts during assembly of electrical buses

NASA Technical Reports Server (NTRS)

Deboo, G. J.; Devine, D. L. (Inventor)

1981-01-01

A test apparatus is described for locating electrical shorts that is especially suited for use while an electrical circuit is being fabricated or assembled. A ring counter derives input pulses from a square wave oscillator. The outputs of the counter are fed through transistors to an array of light emitting diodes. Each diode is connected to an electrical conductor, such as a bus bar, that is to be tested. In the absence of a short between the electrical conductors the diodes are sequentially illuminated. When a short occurs, a comparator/multivibrator circuit triggers an alarm and stops the oscillator and the sequential energization of the diodes. The two diodes that remain illuminated identify the electrical conductors that are shorted.

Laterally injected light-emitting diode and laser diode

DOEpatents

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Design of an Oximeter Based on LED-LED Configuration and FPGA Technology

PubMed Central

Stojanovic, Radovan; Karadaglic, Dejan

2013-01-01

A fully digital photoplethysmographic (PPG) sensor and actuator has been developed. The sensing circuit uses one Light Emitting Diode (LED) for emitting light into human tissue and one LED for detecting the reflectance light from human tissue. A Field Programmable Gate Array (FPGA) is used to control the LEDs and determine the PPG and Blood Oxygen Saturation (SpO2). The configurations with two LEDs and four LEDs are developed for measuring PPG signal and Blood Oxygen Saturation (SpO2). N-LEDs configuration is proposed for multichannel SpO2 measurements. The approach resulted in better spectral sensitivity, increased and adjustable resolution, reduced noise, small size, low cost and low power consumption. PMID:23291575

Visualizing the Logistic Map with a Microcontroller

ERIC Educational Resources Information Center

Serna, Juan D.; Joshi, Amitabh

2012-01-01

The logistic map is one of the simplest nonlinear dynamical systems that clearly exhibits the route to chaos. In this paper, we explore the evolution of the logistic map using an open-source microcontroller connected to an array of light-emitting diodes (LEDs). We divide the one-dimensional domain interval [0,1] into ten equal parts, an associate…

Direct Bandgap Group IV Materials

DTIC Science & Technology

2016-01-21

devices. In this project, we have accomplished (a) direct bandgap group IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near...devices of planar light emitting diode , detector and laser ” 6/12/2015 PI and Co-PI information: - Name of Principal Investigators: Prof. H. H. Cheng...IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near infrared with direct emission, and (c) the first planar

Design of a miniature solid state NIR spectrometer

NASA Astrophysics Data System (ADS)

Zhang, Hanyi; Wang, Xiaolu L.; Soos, Jolanta I.; Crisp, Joy A.

1995-06-01

For aerospace applications a miniature, solid-state near infrared (NIR) spectrometer based on an acousto-optic tunable filter (AOTF) has been developed and built at Brimrose Corp. of America. In this spectrometer a light emitting diode (LED) array as light source, a set of optical fibers as the lightwave transmission route, and a miniature AOTF as a tunable filter were adopted. This approach makes the spectrometer very compact, light-weight, rugged and reliable, with low operating power and long lifetime.

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

PubMed Central

Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.

2009-01-01

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564

Top-emitting organic light-emitting diodes.

PubMed

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Improving lumen maintenance by nanopore array dispersed quantum dots for on-chip light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Quan; Yang, Fan; Wan, Renzhuo; Fang, Dong

2017-12-01

The temperature stability of quantum dots (QDs), which is crucial for integrating into high power light-emitting diodes (LEDs) in the on-chip configuration, needs to be further improved. In this letter, we report warm white LEDs, where CdSe/ZnS nanoparticles were incorporated into a porous anodic alumina (PAA) matrix with a chain structure by the self-assembly method. Experiments demonstrate that the QD concentration range in toluene solvent from 1% mg/μl to 1.2% mg/μl in combination with the PAA matrix shows the best luminous property. To verify the reliability of the as-prepared device, a comparison experiment was conducted. It indicates excellent lumen maintenance of the light source and less chromaticity coordinate shift under accelerated life testing conditions. Experiments also prove that optical depreciation was only up to 4.6% of its initial value after the 1500 h aging test at the junction temperature of 76 °C.

LED intense headband light source for fingerprint analysis

DOEpatents

Villa-Aleman, Eliel

2005-03-08

A portable, lightweight and high-intensity light source for detecting and analyzing fingerprints during field investigation. On-site field analysis requires long hours of mobile analysis. In one embodiment, the present invention comprises a plurality of light emitting diodes; a power source; and a personal attachment means; wherein the light emitting diodes are powered by the power source, and wherein the power source and the light emitting diodes are attached to the personal attachment means to produce a personal light source for on-site analysis of latent fingerprints. The present invention is available for other applications as well.

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm-2

NASA Astrophysics Data System (ADS)

Tian, Pengfei; Althumali, Ahmad; Gu, Erdan; Watson, Ian M.; Dawson, Martin D.; Liu, Ran

2016-04-01

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm-2 for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.

Synthesis and luminescent properties of Tb3Al5O12:Ce3+ phosphors for warm white light emitting diodes

NASA Astrophysics Data System (ADS)

Meng, Qinghuan; Liu, Ying; Fu, Yujie; Zu, Yuangang; Zhou, Zhenbao

2018-01-01

A series of Tb3Al5O12:Ce3+ phosphors were successfully synthesized by a precipitation method. The pure Tb3Al5O12 phase was obtained in the synthesized Tb3Al5O12:Ce3+ phosphors after heat treatments at 500 °C in air for 3 h. The excitation spectra of Tb3Al5O12:Ce3+ phosphors include excitation bands corresponding to Tb3+ and Ce3+ ions. Under the excitation at 455 nm, Tb3Al5O12:Ce3+ phosphors show emission band at around 553 nm. The critical doping concentration of Ce3+ in Tb3Al5O12 is 6mol%, which shows the highest emission intensity. White light-emitting diodes were fabricated by combining InGaN-based blue light-emitting diodes with Tb3Al5O12:Ce3+ and Y3Al5O12:Ce3+ phosphors. The Tb3Al5O12:Ce3+ based white light-emitting diode shows a lower color temperature than that of Y3Al5O12:Ce3+ based white light-emitting diode. The experimental results clearly indicate that the prepared Tb3Al5O12:Ce3+ has potential applications in white light emitting diodes.

High mobility emissive organic semiconductor

PubMed Central

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.

PubMed

Abbasi, Mazhar Ali; Ibupoto, Zafar Hussain; Hussain, Mushtaque; Nur, Omer; Willander, Magnus

2013-07-13

Cheap and efficient white light-emitting diodes (LEDs) are of great interest due to the energy crisis all over the world. Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission. Scanning electron microscopy have well demonstrated the arrays of the ZnO nanorods and the proper etching into the nanotubes. X-ray diffraction study describes the wurtzite crystal structure array of ZnO nanorods with the involvement of GaN at the (002) peak. The cathodoluminescence spectra represent strong and broad visible emission peaks compared to the UV emission and a weak peak at 425 nm which is originated from GaN. Electroluminescence study has shown highly improved luminescence response for the LEDs fabricated with NiO buffer layer compared to that without NiO layer. Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN. Moreover, the presence of NiO buffer layer might create the confinement effect.

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

NASA Astrophysics Data System (ADS)

Wang, Xing-Fu; Tong, Jin-Hui; Zhao, Bi-Jun; Chen, Xin; Ren, Zhi-Wei; Li, Dan-Wei; Zhuo, Xiang-Jing; Zhang, Jun; Yi, Han-Xiang; Li, Shu-Ti

2013-09-01

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental effective intensity of steady and flashing light emitting diodes for aircraft anti-collision lighting.

DOT National Transportation Integrated Search

2013-08-01

Research was conducted to determine the effective intensity of flashing lights that incorporate light-emitting diodes (LEDs). LEDs require less power and have the ability to flash without the addition of moving parts. Compared with incandescent bulbs...

Photoluminescence of Copper-Doped Lithium Niobate Crystals

NASA Astrophysics Data System (ADS)

Gorelik, V. S.; Pyatyshev, A. Yu.; Sidorov, N. V.

2018-05-01

The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV-Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520-620 nm.

Light intensity and quality from sole-source light-emitting diodes impact growth, morphology, and nutrient content of Brassica microgreens

USDA-ARS?s Scientific Manuscript database

Multi-layer vertical production systems using sole-source (SS) lighting can be used for microgreen production; however, traditional SS lighting can consume large amounts of electrical energy. Light-emitting diodes (LEDs) offer many advantages over conventional light sources including: high photoelec...

Method of fabrication of display pixels driven by silicon thin film transistors

DOEpatents

Carey, Paul G.; Smith, Patrick M.

1999-01-01

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Hatano, Kaoru; Chida, Akihiro; Okano, Tatsuya; Sugisawa, Nozomu; Inoue, Tatsunori; Seo, Satoshi; Suzuki, Kunihiko; Oikawa, Yoshiaki; Miyake, Hiroyuki; Koyama, Jun; Yamazaki, Shunpei; Eguchi, Shingo; Katayama, Masahiro; Sakakura, Masayuki

2011-03-01

In this paper, we report a 3.4-in. flexible active matrix organic light emitting display (AMOLED) display with remarkably high definition (quarter high definition: QHD) in which oxide thin film transistors (TFTs) are used. We have developed a transfer technology in which a TFT array formed on a glass substrate is separated from the substrate by physical force and then attached to a flexible plastic substrate. Unlike a normal process in which a TFT array is directly fabricated on a thin plastic substrate, our transfer technology permits a high integration of high performance TFTs, such as low-temperature polycrystalline silicon TFTs (LTPS TFTs) and oxide TFTs, on a plastic substrate, because a flat, rigid, and thermally-stable glass substrate can be used in the TFT fabrication process in our transfer technology. As a result, this technology realized an oxide TFT array for an AMOLED on a plastic substrate. Furthermore, in order to achieve a high-definition AMOLED, color filters were incorporated in the TFT array and a white organic light-emitting diode (OLED) was combined. One of the features of this device is that the whole body of the device can be bent freely because a source driver and a gate driver can be integrated on the substrate due to the high mobility of an oxide TFT. This feature means “true” flexibility.

GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm

NASA Astrophysics Data System (ADS)

Gobet, Mathilde; Bae, Hopil P.; Sarmiento, Tomas; Harris, James S.

2008-02-01

Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with wavelength spacing of 0.4 nm between devices and present these results.

Safety Evaluation of Converting Traffic Signals From Incandescent to Light-emitting Diodes : Summary Report

DOT National Transportation Integrated Search

2013-08-01

Across the Nation, many agencies have been replacing conventional incandescent light bulbs in traffic signals with light-emitting diodes (LED) (see figure 1 and figure 2). LEDs are primarily installed to reduce energy consumption and decrease mainten...

Long Persistent Light Emitting Diode Indicators

ERIC Educational Resources Information Center

Jia, Dongdong; Ma, Yiwei; Hunter, D. N.

2007-01-01

An undergraduate laboratory was designed for undergraduate students to make long persistent light emitting diode (LED) indicators using phosphors. Blue LEDs, which emit at 465 nm, were characterized and used as an excitation source. Long persistent phosphors, SrAl[subscript 2]O[subscript 4]:Eu[superscript 2+],Dy[superscript 3+] (green) and…

Handheld probe integrating laser diode and ultrasound transducer array for ultrasound/photoacoustic dual modality imaging.

PubMed

Daoudi, K; van den Berg, P J; Rabot, O; Kohl, A; Tisserand, S; Brands, P; Steenbergen, W

2014-10-20

Ultrasound and photoacoustics can be utilized as complementary imaging techniques to improve clinical diagnoses. Photoacoustics provides optical contrast and functional information while ultrasound provides structural and anatomical information. As of yet, photoacoustic imaging uses large and expensive systems, which limits their clinical application and makes the combination costly and impracticable. In this work we present and evaluate a compact and ergonomically designed handheld probe, connected to a portable ultrasound system for inexpensive, real-time dual-modality ultrasound/photoacoustic imaging. The probe integrates an ultrasound transducer array and a highly efficient diode stack laser emitting 130 ns pulses at 805 nm wavelength and a pulse energy of 0.56 mJ, with a high pulse repetition frequency of up to 10 kHz. The diodes are driven by a customized laser driver, which can be triggered externally with a high temporal stability necessary to synchronize the ultrasound detection and laser pulsing. The emitted beam is collimated with cylindrical micro-lenses and shaped using a diffractive optical element, delivering a homogenized rectangular light intensity distribution. The system performance was tested in vitro and in vivo by imaging a human finger joint.

A New Individually Addressable Micro-LED Array for Photogenetic Neural Stimulation.

PubMed

McGovern, B; Berlinguer Palmini, R; Grossman, N; Drakakis, E; Poher, V; Neil, M A A; Degenaar, P

2010-12-01

Here, we demonstrate the use of a micro light emitting diode (LED) array as a powerful tool for complex spatiotemporal control of photosensitized neurons. The array can generate arbitrary, 2-D, excitation patterns with millisecond and micrometer resolution. In particular, we describe an active matrix control address system to allow simultaneous control of 256 individual micro LEDs. We present the system optically integrated into a microscope environment and patch clamp electrophysiology. The results show that the emitters have sufficient radiance at the required wavelength to stimulate neurons expressing channelrhodopsin-2 (ChR2).

Photo-induced micro-mechanical optical switch

DOEpatents

Rajic, Slobodan; Datskos, Panagiotis George; Egert, Charles M.

2002-01-01

An optical switch is formed by introducing light lengthwise to a microcantilever waveguide directed toward a second waveguide. The microcantilever is caused to bend by light emitted from a laser diode orthogonal to the microcantilever and at an energy above the band gap, which induces stress as a result of the generation of free carriers. The bending of the waveguide directs the carrier frequency light to a second receptor waveguide or to a non-responsive surface. The switch may be combined in an array to perform multiple switching functions rapidly and at low energy losses.

Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes.

PubMed

Ling, Yichuan; Tian, Yu; Wang, Xi; Wang, Jamie C; Knox, Javon M; Perez-Orive, Fernando; Du, Yijun; Tan, Lei; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

2016-10-01

Highly bright light-emitting diodes based on solution-processed all-inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m -2 and 4%: a new benchmark of device performance for all-inorganic PeLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light emitting diode excitation emission matrix fluorescence spectroscopy.

PubMed

Hart, Sean J; JiJi, Renée D

2002-12-01

An excitation emission matrix (EEM) fluorescence instrument has been developed using a linear array of light emitting diodes (LED). The wavelengths covered extend from the upper UV through the visible spectrum: 370-640 nm. Using an LED array to excite fluorescence emission at multiple excitation wavelengths is a low-cost alternative to an expensive high power lamp and imaging spectrograph. The LED-EEM system is a departure from other EEM spectroscopy systems in that LEDs often have broad excitation ranges which may overlap with neighboring channels. The LED array can be considered a hybrid between a spectroscopic and sensor system, as the broad LED excitation range produces a partially selective optical measurement. The instrument has been tested and characterized using fluorescent dyes: limits of detection (LOD) for 9,10-bis(phenylethynyl)-anthracene and rhodamine B were in the mid parts-per-trillion range; detection limits for the other compounds were in the low parts-per-billion range (< 5 ppb). The LED-EEMs were analyzed using parallel factor analysis (PARAFAC), which allowed the mathematical resolution of the individual contributions of the mono- and dianion fluorescein tautomers a priori. Correct identification and quantitation of six fluorescent dyes in two to six component mixtures (concentrations between 12.5 and 500 ppb) has been achieved with root mean squared errors of prediction (RMSEP) of less than 4.0 ppb for all components.

Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

NASA Astrophysics Data System (ADS)

Wang, Wei; Wang, Liang; Dai, Gaole; Deng, Wei; Zhang, Xiujuan; Jie, Jiansheng; Zhang, Xiaohong

2017-10-01

Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm2 V-1 s-1, demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 × 10 cm2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm2 V-1 s-1 (average mobility 1.2 cm2 V-1 s-1) and 3.0 cm2 V-1 s-1 (average mobility 2.0 cm2 V-1 s-1), respectively. They both have a high on/off ratio ( I on/ I off) > 109. The performance can well satisfy the requirements for light-emitting diodes driving.

Emission enhancement, light extraction and carrier dynamics in InGaAs/GaAs nanowire arrays

NASA Astrophysics Data System (ADS)

Kivisaari, Pyry; Chen, Yang; Anttu, Nicklas

2018-03-01

Nanowires (NWs) have the potential for a wide range of new optoelectronic applications. For example, light-emitting diodes that span over the whole visible spectrum are currently being developed from NWs to overcome the well known green gap problem. However, due to their small size, NW devices exhibit special properties that complicate their analysis, characterization, and further development. In this paper, we develop a full optoelectronic simulation tool for NW array light emitters accounting for carrier transport and wave-optical emission enhancement (EE), and we use the model to simulate InGaAs/GaAs NW array light emitters with different geometries and temperatures. Our results show that NW arrays emit light preferentially to certain angles depending on the NW diameter and temperature, encouraging temperature- and angle-resolved measurements of NW array light emission. On the other hand, based on our results both the EE and light extraction efficiency can easily change by at least a factor of two between room temperature and 77 K, complicating the characterization of NW light emitters if conventional methods are used. Finally, simulations accounting for surface recombination emphasize its major effect on the device performance. For example, a surface recombination velocity of 104 cm s-1 reported earlier for bare InGaAs surfaces results in internal quantum efficiencies less than 30% for small-diameter NWs even at the temperature of 30 K. This highlights that core-shell structures or high-quality passivation techniques are eventually needed to achieve efficient NW-based light emitters.

Recent advances in conjugated polymers for light emitting devices.

PubMed

Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

Recent Advances in Conjugated Polymers for Light Emitting Devices

PubMed Central

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Design, fabrication, and packaging of an integrated, wirelessly-powered optrode array for optogenetics application

PubMed Central

Kwon, Ki Yong; Lee, Hyung-Min; Ghovanloo, Maysam; Weber, Arthur; Li, Wen

2015-01-01

The recent development of optogenetics has created an increased demand for advancing engineering tools for optical modulation of neural circuitry. This paper details the design, fabrication, integration, and packaging procedures of a wirelessly-powered, light emitting diode (LED) coupled optrode neural interface for optogenetic studies. The LED-coupled optrode array employs microscale LED (μLED) chips and polymer-based microwaveguides to deliver light into multi-level cortical networks, coupled with microelectrodes to record spontaneous changes in neural activity. An integrated, implantable, switched-capacitor based stimulator (SCS) system provides high instantaneous power to the μLEDs through an inductive link to emit sufficient light and evoke neural activities. The presented system is mechanically flexible, biocompatible, miniaturized, and lightweight, suitable for chronic implantation in small freely behaving animals. The design of this system is scalable and its manufacturing is cost effective through batch fabrication using microelectromechanical systems (MEMS) technology. It can be adopted by other groups and customized for specific needs of individual experiments. PMID:25999823

Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

2012-09-30

A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

ERIC Educational Resources Information Center

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen; Shi, Hongying; Liu, Bin; Wang, Lianhui; Huang, Wei

2015-02-01

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the usemore » of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.« less

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

76 FR 43722 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-21

... Certain Light- Emitting Diodes and Products Containing Same, DN 2831; the Commission is soliciting... United States after importation of certain light-emitting diodes and products containing same. The...

76 FR 46323 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-02

... Certain Light- Emitting Diodes and Products Containing Same, DN 2837; the Commission is soliciting... the United States after importation of certain light-emitting diodes and products containing same. The...

76 FR 33780 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-09

... Certain Light- Emitting Diodes and Products Containing the Same, DN 2812; the Commission is soliciting... light- emitting diodes and products containing the same. The complaint names as respondents LG...

Usability of light-emitting diodes in precision approach path indicator systems by individuals with marginal color vision.

DOT National Transportation Integrated Search

2014-05-01

To save energy, the FAA is planning to convert from incandescent lights to light-emitting diodes (LEDs) in : precision approach path indicator (PAPI) systems. Preliminary work on the usability of LEDs by color vision-waivered pilots (Bullough, Skinne...

Packaging and Mounting of In-Fibre Bragg Grating Arrays for Structural Health Monitoring of Large Structures

DTIC Science & Technology

2010-10-01

33 Abbreviations CFRP Carbon Fibre Reinforced Polymer FBG Fibre Bragg Grating FGI Fiberglass International FO... Fibre Optic FOS Fibre Optic Sensor GFRP Glass Fibre Reinforced Polymer HDPE High Density Polyethylene LED Light Emitting Diode MHC Mine Hunter...subsequent paragraphs. An operational loads monitoring system for wind turbine blades was demonstrated [7] using FBGs surface-mounted onto glass fibre

Tetradymite layer assisted heteroepitaxial growth and applications

DOEpatents

Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

2017-08-01

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

Photochemical methods to assay DNA photocleavage using supercoiled pUC18 DNA and LED or xenon arc lamp excitation.

PubMed

Prussin, Aaron J; Zigler, David F; Jain, Avijita; Brown, Jared R; Winkel, Brenda S J; Brewer, Karen J

2008-04-01

Methods for the study of DNA photocleavage are illustrated using a mixed-metal supramolecular complex [{(bpy)(2)Ru(dpp)}(2)RhCl(2)]Cl(5). The methods use supercoiled pUC18 plasmid as a DNA probe and either filtered light from a xenon arc lamp source or monochromatic light from a newly designed, high-intensity light-emitting diode (LED) array. Detailed methods for performing the photochemical experiments and analysis of the DNA photoproduct are delineated. Detailed methods are also given for building an LED array to be used for DNA photolysis experiments. The Xe arc source has a broad spectral range and high light flux. The LEDs have a high-intensity, nearly monochromatic output. Arrays of LEDs have the advantage of allowing tunable, accurate output to multiple samples for high-throughput photochemistry experiments at relatively low cost.

Measurement of the water content in oil and oil products using IR light-emitting diode-photodiode optrons

NASA Astrophysics Data System (ADS)

Bogdanovich, M. V.; Kabanau, D. M.; Lebiadok, Y. V.; Shpak, P. V.; Ryabtsev, A. G.; Ryabtsev, G. I.; Shchemelev, M. A.; Andreev, I. A.; Kunitsyna, E. V.; Ivanov, E. V.; Yakovlev, Yu. P.

2017-02-01

The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, kerosene, diesel fuel) has been demonstrated. It has been found that the measurement error can be lowered if (i) the temperature of the light-emitting diode is maintained accurate to 0.5-1.0°C, (ii) by using a cell through which a permanently stirred analyte is pumped, and (iii) by selecting the repetition rate of radiation pulses from the light-emitting diodes according to the averaging time. A meter of water content in oil and oil products has been developed that is built around IR light-emitting device-photodiode optrons. This device provides water content on-line monitoring accurate to 1.5%.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhen, Aigong; Ma, Ping, E-mail: maping@semi.ac.cn; Zhang, Yonghui

2014-12-22

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal couldmore » improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically.« less

Optical design of tunnel lighting with white light-emitting diodes.

PubMed

Tsai, Ming-Shiou; Lee, Xuan-Hao; Lo, Yi-Chien; Sun, Ching-Cherng

2014-10-10

This paper presents a tunnel lighting design consisting of a cluster light-emitting diode and a free-form lens. Most of the energy emitted from the proposed luminaire is transmitted onto the surface of the road in front of drivers, and the probability that that energy is emitted directly into drivers' eyes is low. Compared with traditional fluorescent lamps, the proposed luminaire, of which the optical utilization factor, optical efficiency, and uniformity are, respectively, 44%, 92.5%, and 0.72, exhibits favorable performance in energy saving, glare reduction, and traffic safety.

Supplemental blue LED lighting array to improve the signal quality in hyperspectral imaging of plants.

PubMed

Mahlein, Anne-Katrin; Hammersley, Simon; Oerke, Erich-Christian; Dehne, Heinz-Wilhelm; Goldbach, Heiner; Grieve, Bruce

2015-06-01

Hyperspectral imaging systems used in plant science or agriculture often have suboptimal signal-to-noise ratio in the blue region (400-500 nm) of the electromagnetic spectrum. Typically there are two principal reasons for this effect, the low sensitivity of the imaging sensor and the low amount of light available from the illuminating source. In plant science, the blue region contains relevant information about the physiology and the health status of a plant. We report on the improvement in sensitivity of a hyperspectral imaging system in the blue region of the spectrum by using supplemental illumination provided by an array of high brightness light emitting diodes (LEDs) with an emission peak at 470 nm.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

PubMed Central

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Using light emitting diodes in traffic signals : final report.

DOT National Transportation Integrated Search

1998-07-01

In 1993, the Oregon Department of Transportation (ODOT) began testing red light emitting diodes (LED's) as a replacement to the incandescent lamps in vehicular and pedestrian signals. Field performance was found to be reliable and subsequently ODOT b...

Determining Planck's Constant Using a Light-emitting Diode.

ERIC Educational Resources Information Center

Sievers, Dennis; Wilson, Alan

1989-01-01

Describes a method for making a simple, inexpensive apparatus which can be used to determine Planck's constant. Provides illustrations of a circuit diagram using one or more light-emitting diodes and a BASIC computer program for simplifying calculations. (RT)

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging.

PubMed

Pan, Caofeng; Chen, Mengxiao; Yu, Ruomeng; Yang, Qing; Hu, Youfan; Zhang, Yan; Wang, Zhong Lin

2016-02-24

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Operation of AC Adapters Visualized Using Light-Emitting Diodes

ERIC Educational Resources Information Center

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

DOEpatents

Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2014-10-21

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Broadband visible light source based on AllnGaN light emitting diodes

DOEpatents

Crawford, Mary H.; Nelson, Jeffrey S.

2003-12-16

A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.

Simulation for light extraction efficiency of OLEDs with spheroidal microlenses in hexagonal array

NASA Astrophysics Data System (ADS)

Bae, Hyungchul; Kim, Jun Soo; Hong, Chinsoo

2018-05-01

A theoretical model based on ray optics is used to simulate the optical performance of organic light-emitting diodes (OLEDs) with spheroidal microlens arrays (MLAs) in a hexagonal array configuration using the Monte Carlo method. In simulations, ray tracing was performed until 20 reflections occurred from the metal cathode, with 10 consecutive reflections permitted in a single lens pattern. The parameters describing the shape and array of the lens pattern of a MLA are its radius, height, contact angle, and fill factor (FF). Many previous results on how these parameters affect light extraction efficiency (LEE) are inconsistent. In this paper, these contradictory results are discussed and explained by introducing a new parameter. To examine light extraction from an OLED through a MLA, the LEE enhancement is studied considering the effect of absorption by indium tin oxide during multiple reflections from the metal cathode. The device size where LEE enhancement is unchanged with changing lens pattern was identified for a fixed FF; under this condition, the optimal LEE enhancement, 84%, can be obtained using an OLED with a close-packed spheroidal MLA. An ideal maximum LEE enhancement of 120% was achieved with a device with an infinite-sized MLA. The angular intensity distribution of light emitted through a MLA is considered in addition to LEE enhancement for an optimized MLA.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

ERIC Educational Resources Information Center

Jackson, David L.; And Others

1985-01-01

The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

Light Emitting Diode Flashlights as Effective and Inexpensive Light Sources for Fluorescence Microscopy

PubMed Central

Robertson, J. Brian; Zhang, Yunfei; Johnson, Carl Hirschie

2009-01-01

Summary Light-emitting diodes (LEDs) are becoming more commonly used as light sources for fluorescence microscopy. We describe the adaptation of a commercially available LED flashlight for use as a source for fluorescence excitation. This light source is long-lived, inexpensive, and is effective for excitation in the range of 440–600 nm. PMID:19772530

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

NASA Astrophysics Data System (ADS)

Li, Ling; Zhang, Yuantao; Yan, Long; Jiang, Junyan; Han, Xu; Deng, Gaoqiang; Chi, Chen; Song, Junfeng

2016-12-01

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ˜396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ˜1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ˜3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

PubMed

Li, Jie; Nomura, Hiroko; Miyazaki, Hiroshi; Adachi, Chihaya

2014-06-11

Highly efficient exciplex systems incorporating a heptazine derivative () as an electron acceptor and 1,3-di(9H-carbazol-9-yl)benzene () as an electron donor are developed. An organic light-emitting diode containing 8 wt% : as an emitting layer exhibits a maximum external quantum efficiency of 11.3%.

Optical Experiments Using Mini-Torches with Red, Green and Blue Light Emitting Diodes

ERIC Educational Resources Information Center

Kamata, Masahiro; Matsunaga, Ai

2007-01-01

We have developed two kinds of optical experiments: color mixture and fluorescence, using mini-torches with light emitting diodes (LEDs) that emit three primary colors. Since the tools used in the experiments are simple and inexpensive, students can easily retry and develop the experiments by themselves. As well as giving an introduction to basic…

Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (24th) on May 29 - Jun 2, 2000 in Aegean Sea, Greece

DTIC Science & Technology

2000-06-02

Telecomunicazioni, Torino. Italy 1.30pm XIV.4 "The Reliability of AlGalnP Visible Light Emitting Diodes " D.V. MORGAN and I. Al-Ofi Cardiff University...XV.5 "Green SQW InGaN light - emitting diodes on Si( 111) by metalorganic vapor phase epitaxy" E. Feltin, S. Dalmasso, H. Lareche, B. Beaumont, P. de...effect on GaN-based high efficiency light emitting diodes of a surprisingly high density of TDs has led to considerable interest in determining their

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

PubMed

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

NASA Astrophysics Data System (ADS)

Huang, Hung-Wen; Huang, Jhi-Kai; Kuo, Shou-Yi; Lee, Kang-Yuan; Kuo, Hao-Chung

2010-06-01

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.

High-performance flexible inverted organic light-emitting diodes by exploiting MoS2 nanopillar arrays as electron-injecting and light-coupling layers.

PubMed

Guo, Kunping; Si, Changfeng; Han, Ceng; Pan, Saihu; Chen, Guo; Zheng, Yanqiong; Zhu, Wenqing; Zhang, Jianhua; Sun, Chang; Wei, Bin

2017-10-05

Inverted organic light-emitting diodes (IOLEDs) on plastic substrates have great potential application in flexible active-matrix displays. High energy consumption, instability and poor electron injection are key issues limiting the commercialization of flexible IOLEDs. Here, we have systematically investigated the electrooptical properties of molybdenum disulfide (MoS 2 ) and applied it in developing highly efficient and stable blue fluorescent IOLEDs. We have demonstrated that MoS 2 -based IOLEDs can significantly improve electron-injecting capacity. For the MoS 2 -based device on plastic substrates, we have achieved a very high external quantum efficiency of 7.3% at the luminance of 9141 cd m -2 , which is the highest among the flexible blue fluorescent IOLEDs reported. Also, an approximately 1.8-fold improvement in power efficiency was obtained compared to glass-based IOLEDs. We attributed the enhanced performance of flexible IOLEDs to MoS 2 nanopillar arrays due to their light extraction effect. The van der Waals force played an important role in the formation of MoS 2 nanopillar arrays by thermal evaporation. Notably, MoS 2 -based flexible IOLEDs exhibit an intriguing efficiency roll-up, that is, the current efficiency increases slightly from 14.0 to 14.6 cd A -1 with the luminance increasing from 100 to 5000 cd m -2 . In addition, we observed that the initial brightness of 500 cd m -2 can be maintained at 97% after bending for 500 cycles, demonstrating the excellent mechanical stability of flexible IOLEDs. Furthermore, we have successfully fabricated a transparent, flexible IOLED with low efficiency roll-off at high current density.

Solid-State Lighting Module (SSLM)

NASA Technical Reports Server (NTRS)

2008-01-01

The project's goal was to build a light-emitting-diode (LED)-based light fixture that is identical in fit, form, and function to the existing International Space Station (ISS) General Luminaire Assembly (GLA) light fixture and fly it on the ISS in early FY 2008 as a Station Detailed Test Objective (SDTO). Our design offers the following strengths: proven component hardware: Our design uses components flown in other KSC-developed hardware; heat path thermal pad: LED array heat is transferred from the circuit board by silicon pad, negating the need for a cooling fan; variable colorimetry: The output light color can be changed by inserting different LED combinations.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

PubMed Central

Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

2017-01-01

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm2. Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m−2 that can already satisfy the requirements for lighting sources and displays. PMID:28233778

Thermally evaporated hybrid perovskite for hetero-structured green light-emitting diodes

NASA Astrophysics Data System (ADS)

Mariano, Fabrizio; Listorti, Andrea; Rizzo, Aurora; Colella, Silvia; Gigli, Giuseppe; Mazzeo, Marco

2017-10-01

Thermal evaporation of green-light emitting perovskite (MaPbBr3) films is reported. Morphological studies show that a soft thermal treatment is needed to induce an outstanding crystal growth and film organization. Hetero-structured light-emitting diodes, embedding as-deposited and annealed MAPbBr3 films as active layers, are fabricated and their performances are compared, highlighting that the perovskite evolution is strongly dependent on the growing substrate, too.

The Light-Emitting Diode as a Light Detector

ERIC Educational Resources Information Center

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

PubMed Central

Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

2017-01-01

Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was <1%. We posited that this low efficiency was a result of high leakage current caused by poor perovskite morphology, high non-radiative recombination at interfaces and perovskite grain boundaries, and also charge injection imbalance. Here, we incorporated a small amount of methylammonium organic cation into the CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m−2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date. PMID:28589960

Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

2017-06-01

Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was <1%. We posited that this low efficiency was a result of high leakage current caused by poor perovskite morphology, high non-radiative recombination at interfaces and perovskite grain boundaries, and also charge injection imbalance. Here, we incorporated a small amount of methylammonium organic cation into the CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

Wheat Under LED's (Light Emitting Diodes)

NASA Technical Reports Server (NTRS)

2004-01-01

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashchenko, A. A.; Goriachiy, D. O., E-mail: goryachii@phystech.edu; Vitukhnovsky, A. G.

Experimental samples of organic light-emitting diodes with transport layers based on polythienothiophenes and using CdSe/CdS/ZnS semiconductor quantum dots with an internal quantum efficiency up to 85% in the emitting layer are investigated. It is shown that solubility and film-forming properties are key for using polythienothiophenes in light-emitting diodes. The most promising polythienothiophenes are identified on the basis of the results obtained.

LDEF active optical system components experiment

NASA Technical Reports Server (NTRS)

Blue, M. D.

1992-01-01

A preliminary report on the Active Optical System Components Experiment is presented. This experiment contained 136 components in a six inch deep tray including lasers, infrared detectors and arrays, ultraviolet light detectors, light-emitting diodes, a light modulator, flash lamps, optical filters, glasses, and samples of surface finishes. Thermal, mechanical, and structural considerations leading to the design of the tray hardware are discussed. In general, changes in the retested component characteristics appear as much related to the passage of time as to the effects of the space environment, but organic materials, multilayer optical interference filters, and extreme-infrared reflectivity of black paints show unexpected changes.

Best practices : bus signage for persons with visual impairments : light-emitting diode (LED) signs

DOT National Transportation Integrated Search

2004-01-01

This best-practices report provides key information regarding the use of Light-Emitting Diode (LED) sign technologies to present destination and route information on transit vehicles. It will assist managers and engineers in the acquisition and use o...

High-efficiency electroluminescence and amplified spontaneous emission from a thermally activated delayed fluorescent near-infrared emitter

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeon; D'Aléo, Anthony; Chen, Xian-Kai; Sandanayaka, Atula D. S.; Yao, Dandan; Zhao, Li; Komino, Takeshi; Zaborova, Elena; Canard, Gabriel; Tsuchiya, Youichi; Choi, Eunyoung; Wu, Jeong Weon; Fages, Frédéric; Brédas, Jean-Luc; Ribierre, Jean-Charles; Adachi, Chihaya

2018-02-01

Near-infrared organic light-emitting diodes and semiconductor lasers could benefit a variety of applications including night-vision displays, sensors and information-secured displays. Organic dyes can generate electroluminescence efficiently at visible wavelengths, but organic light-emitting diodes are still underperforming in the near-infrared region. Here, we report thermally activated delayed fluorescent organic light-emitting diodes that operate at near-infrared wavelengths with a maximum external quantum efficiency of nearly 10% using a boron difluoride curcuminoid derivative. As well as an effective upconversion from triplet to singlet excited states due to the non-adiabatic coupling effect, this donor-acceptor-donor compound also exhibits efficient amplified spontaneous emission. By controlling the polarity of the active medium, the maximum emission wavelength of the electroluminescence spectrum can be tuned from 700 to 780 nm. This study represents an important advance in near-infrared organic light-emitting diodes and the design of alternative molecular architectures for photonic applications based on thermally activated delayed fluorescence.

Rapid laser fabrication of microlens array using colorless liquid photopolymer for AMOLED devices

NASA Astrophysics Data System (ADS)

Kim, Kwang-Ryul; Jeong, Han-Wook; Lee, Kong-Soo; Yi, Junsin; Yoo, Jae-Chern; Cho, Myung-Woo; Cho, Sung-Hak; Choi, Byoungdeog

2011-01-01

Microlens array (MLA) is microfabricated using Ultra Violet (UV) laser for display device applications. A colorless liquid photopolymer, Norland Optical Adhesive (NOA) 60, is spin-coated and pre-cured via UV light for completing the laser process. The laser energy controlled by a galvano scanner is radiated on the surface of the NOA 60. A rapid thermal volume expansion inside the material creates microlens array when the Gaussian laser energy is absorbed. The fabrication process conditions for various shapes and densities of MLA using a non-contact surface profiler are investigated. Furthermore, we analyze the optical and display characteristics for the Organic Light Emitting Diode (OLED) devices. Optimized condition furnishes the OLED with the enhancement of light emission by 15%. We show that UV laser technique, which is installed with NOA 60 MLA layer, is eligible for improving the performance of the next generation display devices.

Flip-chip light emitting diode with resonant optical microcavity

DOEpatents

Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

2005-11-29

A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode

NASA Astrophysics Data System (ADS)

Toyama, Toshihiko; Ichihara, Tokuyuki; Yamaguchi, Daisuke; Okamoto, Hiroaki

2007-10-01

Thin-film light emitting devices based on organic materials have been gathering attentions for applying a flat-panel display and a solid-state lighting. Alternatively, inorganic technologies such as Si-based thin-film technology have been growing almost independently. It is then expected that combining the Si-based thin-film technology with the organic light emitting diode (OLED) technology will develop innovative devices. Here, we report syntheses of the hybrid light emitting diode (LED) with a heterostructure consisting of p-type SiC x and tris-(8-hydroxyquinoline) aluminum films and characterization for the hybrid LEDs. We present the energy diagram of the heterostructure, and describe that the use of high dark conductivities of the p-type SiC x as well as inserting wide-gap intrinsic a-SiC x at the p-type SiC x/Alq interface are effective for improving device performance.

Analysis of condition for uniform lighting generated by array of light emitting diodes with large view angle.

PubMed

Qin, Zong; Wang, Kai; Chen, Fei; Luo, Xiaobing; Liu, Sheng

2010-08-02

In this research, the condition for uniform lighting generated by array of LEDs with large view angle was studied. The luminous intensity distribution of LED is not monotone decreasing with view angle. A LED with freeform lens was designed as an example for analysis. In a system based on LEDs designed in house with a thickness of 20mm and rectangular arrangement, the condition for uniform lighting was derived and the analytical results demonstrated that the uniformity was not decreasing monotonously with the increasing of LED-to-LED spacing. The illuminance uniformities were calculated with Monte Carlo ray tracing simulations and the uniformity was found to increase with the increasing of certain LED-to-LED spacings anomalously. Another type of large view angle LED and different arrangements were discussed in addition. Both analysis and simulation results showed that the method is available for LED array lighting system design on the basis of large view angle LED..

Light-Emitting Diodes: A Hidden Treasure

ERIC Educational Resources Information Center

Planinšic, Gorazd; Etkina, Eugenia

2014-01-01

LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers.

PubMed

Castelli, Andrea; Meinardi, Francesco; Pasini, Mariacecilia; Galeotti, Francesco; Pinchetti, Valerio; Lorenzon, Monica; Manna, Liberato; Moreels, Iwan; Giovanella, Umberto; Brovelli, Sergio

2015-08-12

Colloidal quantum dots (QDs) are emerging as true candidates for light-emitting diodes with ultrasaturated colors. Here, we combine CdSe/CdS dot-in-rod heterostructures and polar/polyelectrolytic conjugated polymers to demonstrate the first example of fully solution-based quantum dot light-emitting diodes (QD-LEDs) incorporating all-organic injection/transport layers with high brightness, very limited roll-off and external quantum efficiency as high as 6.1%, which is 20 times higher than the record QD-LEDs with all-solution-processed organic interlayers and exceeds by over 200% QD-LEDs embedding vacuum-deposited organic molecules.

Light emitting diodes (LED): applications in forest and native plant nurseries

Treesearch

Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

2013-01-01

It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

Stacked Device of Polymer Light-Emitting Diode Driven by Metal-Base Organic Transistor

NASA Astrophysics Data System (ADS)

Yoneda, Kazuhiro; Nakayama, Ken-ichi; Yokoyama, Masaaki

2008-02-01

We fabricated a new light-emitting device that combined a polymer light-emitting diode (PLED) and a vertical-type metal-base organic transistor (MBOT) through a floating electrode. By employing a layered floating electrode of Mg:Ag/Au, the MBOT on the PLED was operated successfully and a current amplification factor of approximately 20 was observed. The PLED luminescence exceeding 100 cd/m2 can be modulated using the MBOT with a low base voltage (2.8 V) and VCC (8 V). The emission contrast (on/off ratio) was improved with insertion of an insulating layer under the base, and the cut-off frequency was estimated to be 8 kHz. This device is expected to be a promising driving system of organic light-emitting diode (OLED), realizing low voltage and high numerical aperture.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

NASA Astrophysics Data System (ADS)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

Director's discretionary fund report for FY 1991

NASA Technical Reports Server (NTRS)

1992-01-01

The Director's Discretionary Fund (DDF) at the Ames Research Center was established to fund innovative, high-risk projects in basic research which would otherwise be difficult to initiate, but which are essential to our future programs. Here, summaries are given of individual projects within this program. Topics covered include scheduling electric power for the Ames Research Center, the feasibility of light emitting diode arrays as a lighting source for plant growth chambers in space, plasma spraying of nonoxide coatings using a constricted arcjet, and the characterization of vortex impingement footprint using non-intrusive measurement techniques.

High extraction efficiency ultraviolet light-emitting diode

DOEpatents

Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

2015-11-24

Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Nichols, Jonathan A.

Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

Response of conifer species from three latitudinal populations to light spectra generated by light-emitting diodes and high-pressure sodium lamps

Treesearch

Kent G. Apostol; Kas Dumroese; Jeremy Pinto; Anthony S. Davis

2015-01-01

Light-emitting diode (LED) technology shows promise for supplementing photosynthetically active radiation (PAR) in forest nurseries because of the potential reduction in energy consumption and an ability to supply discrete wavelengths to optimize seedling growth. Our objective was to examine the effects of light spectra supplied by LED and traditional high-pressure...

Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

PubMed

An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

2015-10-01

Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

II-VI Semiconductor Superlattices

DTIC Science & Technology

1992-12-01

N. Otsuka, H. icon, J. Ding, and A.V. Nurmikko, " Blue /Green Injection Lasers and Light Emitting Diodes" J. Vac. Sci. Technology B, 10(2) March/April...34Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters" AppI. Phys. Lett. 60(23) 8 June 1992, p. 2825...characteristics of this contact scheme have been demon- strated tI)gether with their use Jn both blue ,/groen light lip emitting diodes and diode laser:- The

Superluminescent light emitting diodes: the best out of two worlds

NASA Astrophysics Data System (ADS)

Rossetti, M.; Napierala, J.; Matuschek, N.; Achatz, U.; Duelk, M.; Vélez, C.; Castiglia, A.; Grandjean, N.; Dorsaz, J.; Feltin, E.

2012-03-01

Since pico-projectors were starting to become the next electronic "must-have" gadget, the experts were discussing which light-source technology seems to be the best for the existing three major projection approaches for the optical scanning module such as digital light processing, liquid crystal on silica and laser beam steering. Both so-far used light source technologies have distinct advantages and disadvantages. Though laser-based pico-projectors are focus-free and deliver a wider color gamut, their major disadvantages are speckle noise, cost and safety issues. In contrast, projectors based on cheaper Light Emitting Diodes (LEDs) as light source are criticized for a lack of brightness and for having limited focus. Superluminescent Light Emitting Diodes (SLEDs) are temporally incoherent and spatially coherent light sources merging in one technology the advantages of both Laser Diodes (LDs) and LEDs. With almost no visible speckle noise, focus-free operation and potentially the same color gamut than LDs, SLEDs could potentially answer the question which light source to use in future projector applications. In this quest for the best light source, we realized visible SLEDs emitting both in the red and blue spectral region. While the technology required for the realization of red emitters is already well established, III-nitride compounds required for blue emission have experienced a major development only in relatively recent times and the technology is still under development. The present paper is a review of the status of development reached for the blue superluminescent diodes based on the GaN material system.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Gallium Nitride Nanowires and Heterostructures: Toward Color-Tunable and White-Light Sources.

PubMed

Kuykendall, Tevye R; Schwartzberg, Adam M; Aloni, Shaul

2015-10-14

Gallium-nitride-based light-emitting diodes have enabled the commercialization of efficient solid-state lighting devices. Nonplanar nanomaterial architectures, such as nanowires and nanowire-based heterostructures, have the potential to significantly improve the performance of light-emitting devices through defect reduction, strain relaxation, and increased junction area. In addition, relaxation of internal strain caused by indium incorporation will facilitate pushing the emission wavelength into the red. This could eliminate inefficient phosphor conversion and enable color-tunable emission or white-light emission by combining blue, green, and red sources. Utilizing the waveguiding modes of the individual nanowires will further enhance light emission, and the properties of photonic structures formed by nanowire arrays can be implemented to improve light extraction. Recent advances in synthetic methods leading to better control over GaN and InGaN nanowire synthesis are described along with new concept devices leading to efficient white-light emission. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Topical methyl-aminolevulinate photodynamic therapy using red light-emitting diode light for treatment of multiple actinic keratoses: A randomized, double-blind, placebo-controlled study.

PubMed

Pariser, David; Loss, Robert; Jarratt, Michael; Abramovits, William; Spencer, James; Geronemus, Roy; Bailin, Philip; Bruce, Suzanne

2008-10-01

The use of light-emitting diode light offers practical advantages in photodynamic therapy (PDT) with topical methyl-aminolevulinate (MAL) for management of actinic keratoses (AK). We sought to evaluate the efficacy of MAL PDT using red light-emitting diode light. We conducted a multicenter, double-blind, randomized study. A total of 49 patients with 363 AK lesions had 16.8% MAL cream applied under occlusion for 3 hours, and 47 patients with 360 AK lesions had vehicle cream similarly applied. The lesions were then illuminated (630 nm, light dose 37 J/cm2) with repeated treatment 1 week later. Complete lesion and patient (all lesions showing complete response) response rates were evaluated 3 months after last treatment. MAL PDT was superior (P<.0001) to vehicle PDT with respect to lesion complete response (86.2% vs 52.2%, odds ratio 6.9 [95% confidence interval 4.7-10.3]) and patient complete response (59.2% vs 14.9%, odds ratio 13.2 [95% confidence interval 4.1-43.1]). The study population may not be representative of all patients with AK. MAL PDT using red light-emitting diode light is an appropriate treatment alternative for multiple AK lesions.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

PubMed

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Organic light-emitting diode materials

DOEpatents

Aspuru-Guzik, Alan; Gomez-Bombarelli, Rafael; Aguilera-Iparraguirre, Jorge; Baldo, Marc; Van Voorhis, Troy; Hirzel, Timothy D.; Bahlke, Matthias; McMahon, David; Wu, Tony Chang-Chi

2018-05-15

Described herein are molecules for use in organic light emitting diodes. Example molecules comprise at least one moiety A and at least one moiety D. Values and preferred values of the moieties A and D are described herein. The molecules comprise at least one atom selected from Si, Se, Ge, Sn, P, or As.

Response of adult mosquitoes to light emitting diodes placed in resting boxes and in the field.

USDA-ARS?s Scientific Manuscript database

Resting boxes are passive devices used to attract and capture mosquitoes seeking shelter. Increasing the attractiveness of these devices could improve their effectiveness. Light emitting diodes (LEDs) can be attractive to mosquitoes when used together with other trapping devices. Therefore restin...

Polymer Light-Emitting Diode (PLED) Process Development

DTIC Science & Technology

2003-12-01

conclusions and recommendations for Phase II of the Flexible Display Program. 15. SUBJECT TERMS LIGHT EMITTING DIODES LIQUID CRYSTAL DISPLAY SYSTEMS...space for Phase I and II confined by backplane complexity and substrate form...12 Figure 6. Semi automated I-V curve measurement setup consisting of Keithley power supply, computer and

Strain tunable light emitting diodes with germanium P-I-N heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lagally, Max G; Sanchez Perez, Jose Roberto

Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

A final look at LDEF electro-optic systems components

NASA Technical Reports Server (NTRS)

Blue, M. D.

1995-01-01

Postrecovery characteristics of LDEF electro-optic components from the GTRI tray are compared with their prelaunch characteristics and with the characteristics of similar components from related experiments. Components considered here include lasers, light-emitting diodes, semiconducting radiation detectors and arrays, optical substrates, filters, and mirrors, and specialized coatings. Our understanding of the physical effects resulting from low earth orbit are described, and guidelines and recommendations for component and materials choices are presented.

Electronic Two-Transition-Induced Enhancement of Emission Efficiency in Polymer Light-Emitting Diodes

PubMed Central

Chen, Ren-Ai; Wang, Cong; Li, Sheng; George, Thomas F.

2013-01-01

With the development of experimental techniques, effective injection and transportation of electrons is proven as a way to obtain polymer light-emitting diodes (PLEDs) with high quantum efficiency. This paper reveals a valid mechanism for the enhancement of quantum efficiency in PLEDs. When an external electric field is applied, the interaction between a negative polaron and triplet exciton leads to an electronic two-transition process, which induces the exciton to emit light and thus improve the emission efficiency of PLEDs. PMID:28809346

Colonic Marking With Near-Infrared, Light-Emitting, Diode-Activated Indocyanine Green for Laparoscopic Colorectal Surgery.

PubMed

Nagata, Jun; Fukunaga, Yosuke; Akiyoshi, Takashi; Konishi, Tsuyoshi; Fujimoto, Yoshiya; Nagayama, Satoshi; Yamamoto, Noriko; Ueno, Masashi

2016-02-01

Accurate identification of the location of colorectal lesions is crucial during laparoscopic surgery. Endoscopic marking has been used as an effective preoperative marker for tumor identification. We investigated the feasibility and safety of an imaging method using near-infrared, light-emitting, diode-activated indocyanine green fluorescence in colorectal laparoscopic surgery. This was a single-institution, prospective study. This study was conducted in a tertiary referral hospital. We enrolled 24 patients who underwent laparoscopic surgery. Indocyanine green and India ink were injected into the same patients undergoing preoperative colonoscopy for colon cancer. During subsequent laparoscopic resection of colorectal tumors, the colon was first observed with white light. Then, indocyanine green was activated with a light-emitting diode at 760 nm as the light source. Near-infrared-induced fluorescence showed tumor location clearly and accurately in all 24 of the patients. All of the patients who underwent laparoscopic surgery after marking had positive indocyanine green staining at the time of surgery. Perioperative complications attributed to dye use were not observed. This study is limited by the cost of indocyanine green detection, the timing of the colonoscopy and tattooing in relation to the operation and identification with indocyanine green, and the small size of the series. These data suggest that our novel method for colonic marking with fluorescence imaging of near-infrared, light-emitting, diode-activated indocyanine green is feasible and safe. This method is useful, has no adverse effects, and can be used for perioperative identification of tumor location. Near-infrared, light-emitting, diode-activated indocyanine green has potential use as a colonic marking agent.

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

NASA Astrophysics Data System (ADS)

Wang, Min-Shuai; Huang, Xiao-Jing

2013-08-01

We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal—organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

Methodological comparison on OLED and OLET fabrication

NASA Astrophysics Data System (ADS)

Suppiah, Sarveshvaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

2018-02-01

The potential of organic semiconductor devices for light generation is demonstrated by the commercialization of display technologies based on organic light emitting diode (OLED). In OLED, organic materials play the role of light emission once the current is passed through. However, OLED do have major drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as the new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as light generation. The aim of this study is to methodologically compare and contrast fabrication process and evaluate feasibility of both organic light emitting diode (OLED) and organic light emitting transistor (OLET). The proposed light emitting layer in this study is poly [2-methoxy-5- (2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV).

Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1994-04-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. In this program, we concentrated on novel epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

NASA Astrophysics Data System (ADS)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

PubMed

Jin, Yuanhao; Yang, Fenglei; Li, Qunqing; Zhu, Zhendong; Zhu, Jun; Fan, Shoushan

2012-07-02

Significant enhancement in the light output from GaN-based green light-emitting diodes (LEDs) was achieved with a hemicylindrical grating structure on the top layer of the diodes. The grating structure was first optimized by the finite-difference time-domain (FDTD) method, which showed that the profile of the grating structure was critical for light extraction efficiency. It was found that the transmission efficiency of the 530 nm light emitted from the inside of the GaN LED increased for incidence angles between 23.58° and 60°. Such a structure was fabricated by electron-beam lithography and an etching method. The light output power from the LED was increased approximately 4.7 times compared with that from a conventional LED. The structure optimization is the key to the great increase in transmission efficiency. Furthermore, the light emitted from the edge of the LED units could be collected and extracted by the grating structures in adjacent LED units, thus enhancing the performance of the whole LED chip.

A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

2014-05-01

A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Nitride micro-LEDs and beyond--a decade progress review.

PubMed

Jiang, H X; Lin, J Y

2013-05-06

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid infrastructure; and high-resolution solid-state self-emissive microdisplays operating in an active driving scheme to address the need of high brightness, efficiency and robustness of microdisplays. These devices utilize the photonic integration approach by integrating µLED arrays on-chip. Other applications of nitride µLED arrays are also discussed.

Light-Emitting Diodes: Learning New Physics

ERIC Educational Resources Information Center

Planinšic, Gorazd; Etkina, Eugenia

2015-01-01

This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

Light-Emitting Diodes: Solving Complex Problems

ERIC Educational Resources Information Center

Planinšic, Gorazd; Etkina, Eugenia

2015-01-01

This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

Broadband mid-infrared superlattice light-emitting diodes

NASA Astrophysics Data System (ADS)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Comment on "Enhancement of flip-chip white light-emitting diodes with a one-dimensional photonic crystal".

PubMed

Liu, Zong-Yuan; Liu, Sheng; Wang, Kai; Luo, Xiao-Bing

2010-06-01

We show that research presented in Opt. Lett.34, 301 (2009)OPLEDP0146-959210.1364/OL.34.000301 applied questionable phosphor definitions and a questionable simulation procedure for light-emitting diodes. Our simulation indicates that a one-dimensional photonic crystal is beneficial for color control but cannot improve the light extraction as asserted in that Letter.

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

PubMed

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Light-emitting diodes as a radiation source for plants

NASA Technical Reports Server (NTRS)

Bula, R. J.; Morrow, R. C.; Tibbitts, T. W.; Barta, D. J.; Ignatius, R. W.; Martin, T. S.

1991-01-01

Development of a more effective radiation source for use in plant-growing facilities would be of significant benefit for both research and commercial crop production applications. An array of light-emitting diodes (LEDs) that produce red radiation, supplemented with a photosynthetic photon flux (PPF) of 30 micromoles s-1 m-2 in the 400- to 500-nm spectral range from blue fluorescent lamps, was used effectively as a radiation source for growing plants. Growth of lettuce (Lactuca sativa L. Grand Rapids') plants maintained under the LED irradiation system at a total PPF of 325 micromoles s-1 m-2 for 21 days was equivalent to that reported in the literature for plants grown for the same time under cool-white fluorescent and incandescent radiation sources. Characteristics of the plants, such as leaf shape, color, and texture, were not different from those found with plants grown under cool-white fluorescent lamps. Estimations of the electrical energy conversion efficiency of a LED system for plant irradiation suggest that it may be as much as twice that published for fluorescent systems.

"Quasi-freestanding" graphene-on-single walled carbon nanotube electrode for applications in organic light-emitting diode.

PubMed

Liu, Yanpeng; Jung, Eun; Wang, Yu; Zheng, Yi; Park, Eun Ji; Cho, Sung Min; Loh, Kian Ping

2014-03-12

An air-stable transparent conductive film with "quasi-freestanding" graphene supported on horizontal single walled carbon nanotubes (SWCNTs) arrays is fabricated. The sheet resistance of graphene films stacked via layer-by-layer transfer (LBL) on quartz, and modified by 1-Pyrenebutyric acid N-hydroxysuccinimide ester (PBASE), is reduced from 273 Ω/sq to about 76 Ω/sq. The electrical properties are stable to heat treatment (up to 200 ºC) and ambient exposure. Organic light-emitting diodes (OLEDs) constructed of this carbon anode (T ≈ 89.13% at 550 nm) exhibit ≈88% power efficiency of OLEDs fabricated on an ITO anode (low turn on voltage ≈3.1 eV, high luminance up to ≈29 490 cd/m(2) , current efficiency ≈14.7 cd/A). Most importantly, the entire graphene-on-SWCNT hybrid electrodes can be transferred onto plastic (PET) forming a highly-flexible OLED device, which continues to function without degradation in performance at bending angles >60°. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Site-controlled InGaN/GaN single-photon-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu; Teng, Chu-Hsiang

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

PubMed

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

PubMed

Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

2013-01-01

The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

Optochemical sensor based on screenprinted fluorescent sensorspots surrounded by organic photodiodes for multianalyte detection

NASA Astrophysics Data System (ADS)

Kraker, E.; Lamprecht, B.; Haase, A.; Jakopic, G.; Abel, T.; Konrad, C.; Köstler, S.; Tscherner, M.; Stadlober, B.; Mayr, T.

2010-08-01

A compact, integrated photoluminescence based oxygen sensor, utilizing an organic light emitting device (OLED) as the light source and an organic photodiode (OPD) as the detection unit, is described. The detection system of the sensor array consists of an array of circular screen-printed fluorescent sensor spots surrounded by organic photodiodes as integrated fluorescence detectors. The OPD originates from the well-known Tang photodiode, consisting of a stacked layer of copper phthalocyanine (CuPc, p-type material) and perylene tetracarboxylic bisbenzimidazole (PTCBi, n-type material). An additional layer of tris-8-hydroxyquinolinatoaluminium (Alq3, n-type material) was inserted between the PTCBi layer and cathode. An ORMOCERR layer was used as encapsulation layer. For excitation an organic light emitting diode is used. The sensor spot and the detector are processed on the same flexible substrate. This approach not only simplifies the detection system by minimizing the numbers of required optical components - no optical filters have to be used for separating the excitation light and the luminescent emission-, but also has a large potential for low-cost sensor applications. The feasibility of the concept is demonstrated by an integrated oxygen sensor, indicating good performance. Sensor schemes for other chemical parameters are proposed.

A flexible top-emitting organic light-emitting diode on steel foil

NASA Astrophysics Data System (ADS)

Xie, Zhiyuan; Hung, Liang-Sun; Zhu, Furong

2003-11-01

An efficient flexible top-emitting organic light-emitting diode (FTOLED) was developed on a thin steel foil. The FTOLED was constructed on the spin-on-glass (SOG)-coated steel substrate with an organic stack of NPB/Alq 3 sandwiched by a highly reflective Ag anode and a semitransparent Sm cathode. An ultrathin plasma-polymerized hydrocarbon film (CF X) was interposed between the Ag anode and the NPB layer to enhance hole-injection, and an additional Alq 3 layer was overlaid on the Sm cathode to increase light output. The FTOLED showed a peak efficiency of 4.4 cd/A higher than 3.7 cd/A of a convention NPB/Alq 3-based bottom-emitting OLED.

Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

DOE PAGES

Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; ...

2015-11-27

Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO 2. We show that the mask opening diameter leads to as much as 4 times increasemore » in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.« less

Tuning of the emission color of organic light emitting diodes via smartly designed aluminum plasmonics

NASA Astrophysics Data System (ADS)

Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim; List-Kratochvil, Emil J. W.

2017-02-01

With the invention of phosphorescent emitter material, organic light emitting diodes with internal quantum yields of up to 100% can be realized. Still, the extraction of the light from the OLED stack is a bottleneck, which hampers the availability of OLEDs with large external quantum efficiencies. In this contribution, we highlight the advantages of integrating aluminum nanodisc arrays into the OLED stack. By this, not only the out-coupling of light can be enhanced, but also the emission color can be tailored and controlled. By means of extinction- and fluorescence spectroscopy measurements we are able to show how the sharp features observed in the extinction measurements correlate with a very selective fluorescence enhancement of the organic emitter materials used in these studies. At the same time, localized surface plasmon resonances of the individual nanodiscs further modify the emission spectrum, e.g., by filtering the green emission tail. A combination of these factors leads to a modification of the emission color in between CIE1931 (x,y) chromaticity coordinates of (0.149, 0.225) and (0.152, 0.352). After accounting for the sensitivity of the human eye, we are able to demonstrate that this adjustment of the chromaticity coordinates goes is accompanied by an increase in device efficiency.

Comparative study of the bactericidal effects of indocyanine green- and methyl aminolevulinate-based photodynamic therapy on Propionibacterium acnes as a new treatment for acne.

PubMed

Choi, Seung-Hwan; Seo, Jeong-Wan; Kim, Ki-Ho

2018-05-03

Acne vulgaris is one of the most common dermatological problems, and its therapeutic options include topical and systemic retinoids and antibiotics. However, increase in problems associated with acne treatment, such as side-effects from conventional agents and bacterial resistance to antibiotics, has led to greater use of photodynamic therapy. The purpose of this study was to compare the bactericidal effects of indocyanine green- and methyl aminolevulinate-based photodynamic therapy on Propionibacterium acnes. P. acnes were cultured under anaerobic conditions; then they were divided into three groups (control, treated with indocyanine green and treated with methyl aminolevulinate) and illuminated with different lights (630-nm light-emitting diode, 805-nm diode laser and 830-nm light-emitting diode). The bactericidal effects were evaluated by comparing each group's colony-forming units. The cultured P. acnes were killed with an 805-nm diode laser and 830-nm light-emitting diode in the indocyanine green group. No bactericidal effects of methyl aminolevulinate-based photodynamic therapy were identified. The clinical efficacy of indocyanine green-based photodynamic therapy in 21 patients was retrospectively analyzed. The Korean Acne Grading System was used to evaluate treatment efficacy, which was significantly decreased after treatment. The difference in the efficacy of the 805-nm diode laser and 830-nm light-emitting diode was not statistically significant. Although the methyl aminolevulinate-based photodynamic therapy showed no bactericidal effect, the indocyanine green-based photodynamic therapy has bactericidal effect and clinical efficacy. © 2018 Japanese Dermatological Association.

Atomic Layer Deposition Enabled Interconnect Technology for Vertical Nanowire Arrays

DTIC Science & Technology

2009-06-01

Diodes”, Nano Lett., Vol. 5, No. 11, 2005. [5] Hwa-Mok Kim, Tae Won Kang and Kwan Soo Chung,“Nanoscale Ultraviolet-Light- Emitting Diodes Using Wide...Bandgap Gallium Nitride Nanorods”, Adv. Materi. 2003, 15, No. 7-8. [6] Candace K. Chan, Hailin Peng, Gao Liu, Kevin McIlwrath, Xiao Feng Zhang...Coatings”Adv. Mater. (Weinheim, Ger.) 19, 1801 2007. [13] Candace K. Chan, Hailin Peng, Gao Liu, Kevin McIlwrath, Xiao Feng Zhang, Robert A. Huggins

Naturally formed graded junction for organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shao, Yan; Yang, Yang

2003-09-01

In this letter, we report naturally-formed graded junctions (NFGJ) for organic light-emitting diodes (OLEDs). These junctions are fabricated using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. Upon heating, materials sublimate sequentially according to their vaporizing temperatures forming the graded junction. Two kinds of graded structures, sharp and shallow graded junctions, can be formed based on the thermal properties of the selected materials. The NFGJ OLEDs have shown excellent performance in both brightness and lifetime compared with heterojunction devices.

Unclassified Publications of Lincoln Laboratory. Volume 5

DTIC Science & Technology

1975-12-15

10 TN-1974-36 LIGHT - EMITTING DIODES (LED) JA-4295 LIGHT SCATTERING JA-4456 LINCOLN DIGITAL VOICE TERMINAL TN-1975-53, TN-1975-65 LINCOLN...Hinkley J. O. Sample G. Dresselhaus T. C. Harman J. P. McVittie J. Filson p-n Junction PbSi_xSex Photo- J. P. Donnelly diodes Fabricated by Se...Room-Temperature Operation of GalnAsP/lnP Double- Heterostructure Diode Lasers Emitting at 1.1 (im Transparent Heat Mirrors for Solar-Energy

Design of LED fish lighting attractors using horizontal/vertical LIDC mapping method.

PubMed

Shen, S C; Huang, H J

2012-11-19

This study employs a sub-module concept to develop high-brightness light-emitting diode (HB-LED) fishing light arrays to replace traditional fishing light attractors. The horizontal/vertical (H/V) plane light intensity distribution curve (LIDC) of a LED light source are mapped to assist in the design of a non-axisymmetric lens with a fish-attracting light pattern that illuminates sufficiently large areas and alternates between bright and dark. These LED fishing light attractors are capable of attracting schools of fish toward the perimeter of the luminous zone surrounding fishing boats. Three CT2 boats (10 to 20 ton capacity) were recruited to conduct a field test for 1 y on the sea off the southwestern coast of Taiwan. Field tests show that HB-LED fishing light array installed 5 m above the boat deck illuminated a sea surface of 5 × 12 m and achieved an illuminance of 2000 lx. The test results show that the HB-LED fishing light arrays increased the mean catch of the three boats by 5% to 27%. In addition, the experimental boats consumed 15% to 17% less fuel than their counterparts.

Methods and apparatus of spatially resolved electroluminescence of operating organic light-emitting diodes using conductive atomic force microscopy

NASA Technical Reports Server (NTRS)

Hersam, Mark C. (Inventor); Pingree, Liam S. C. (Inventor)

2008-01-01

A conductive atomic force microscopy (cAFM) technique which can concurrently monitor topography, charge transport, and electroluminescence with nanometer spatial resolution. This cAFM approach is particularly well suited for probing the electroluminescent response characteristics of operating organic light-emitting diodes (OLEDs) over short length scales.

Organic light-emitting diodes from homoleptic square planar complexes

DOEpatents

Omary, Mohammad A

2013-11-12

Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

PubMed

Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

2014-04-01

The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser. © 2013 The Authors. Australian Endodontic Journal © 2013 Australian Society of Endodontology.

High efficiency III-nitride light-emitting diodes

DOEpatents

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Finger blood content, light transmission, and pulse oximetry errors.

PubMed

Craft, T M; Lawson, R A; Young, J D

1992-01-01

The changes in light emitting diode current necessary to maintain a constant level of light incident upon a photodetector were measured in 20 volunteers at the two wavelengths employed by pulse oximeters. Three states of finger blood content were assessed; exsanguinated, hyperaemic, and normal. The changes in light emitting diode current with changes in finger blood content were small and are not thought to represent a significant source of error in saturation as measured by pulse oximetry.

Light emission mechanism of mixed host organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Song, Wook; Lee, Jun Yeob

2015-03-01

Light emission mechanism of organic light-emitting diodes with a mixed host emitting layer was studied using an exciplex type mixed host and an exciplex free mixed host. Monitoring of the current density and luminance of the two type mixed host devices revealed that the light emission process of the exciplex type mixed host was dominated by energy transfer, while the light emission of the exciplex free mixed host was controlled by charge trapping. Mixed host composition was also critical to the light emission mechanism, and the contribution of the energy transfer process was maximized at 50:50 mixed host composition. Therefore, it was possible to manage the light emission process of the mixed host devices by managing the mixed host composition.

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

Point-of-use water disinfection using ultraviolet and visible light-emitting diodes.

PubMed

Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas J; Stuetz, Richard

2016-05-15

Improvements in point-of-use (POU) drinking water disinfection technologies for remote and regional communities are urgently needed. Conceptually, UV-C light-emitting diodes (LEDs) overcome many drawbacks of low-pressure mercury tube based UV devices, and UV-A or visible light LEDs also show potential. To realistically evaluate the promise of LED disinfection, our study assessed the performance of a model 1.3 L reactor, similar in size to solar disinfection bottles. In all, 12 different commercial or semi-commercial LED arrays (270-740 nm) were compared for their ability to inactivate Escherichia coli K12 ATCC W3110 and Enterococcus faecalis ATCC 19433 over 6h. Five log10 and greater reductions were consistently achieved using the 270, 365, 385 and 405 nm arrays. The output of the 310 nm array was insufficient for useful disinfection while 430 and 455 nm performance was marginal (≈ 4.2 and 2.3-log10s E. coli and E. faecalis over the 6h). No significant disinfection was observed with the 525, 590, 623, 660 and 740 nm arrays. Delays in log-phase inactivation of E. coli were observed, particularly with UV-A wavelengths. The radiation doses required for >3-log10 reduction of E. coli and E. faecalis differed by 10 fold at 270 nm but only 1.5-2.5 fold at 365-455 nm. Action spectra, consistent with the literature, were observed with both indicators. The design process revealed cost and technical constraints pertaining to LED electrical efficiency, availability and lifetime. We concluded that POU LED disinfection using existing LED technology is already technically possible. UV-C LEDs offer speed and energy demand advantages, while UV-A/violet units are safer. Both approaches still require further costing and engineering development. Our study provides data needed for such work. Copyright © 2016 Elsevier B.V. All rights reserved.

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

NASA Astrophysics Data System (ADS)

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

2016-12-01

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method of enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission.

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

DOE PAGES

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

2016-12-12

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials.

PubMed

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-03

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9'-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9',9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials

NASA Astrophysics Data System (ADS)

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-01

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9‧-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9‧,9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

NASA Astrophysics Data System (ADS)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NASA Astrophysics Data System (ADS)

Abbaszadeh, Davood; Nicolai, Herman T.; Crǎciun, N. Irina; Blom, Paul W. M.

2014-11-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N ,N ,N',N' tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict that a concentration of 5% HTU leads to an optimal efficiency for this blue-emitting polymer. However, experimentally an optimum performance is achieved for 10% TAD HTUs. Analysis of the transport and recombination shows that polymer light-emitting diodes with 5%, 7.5%, and 12.5% TAD units follow the predicted behavior. The enhanced performance of the polymer with 10% TAD originates from a decrease in the number of electron traps, which is typically a factor of three lower than the universal value found in many polymers. This reduced number of traps leads to a reduction of nonradiative recombination and exciton quenching at the cathode.

Solid state lighting component

DOEpatents

Yuan, Thomas; Keller, Bernd; Tarsa, Eric; Ibbetson, James; Morgan, Frederick; Dowling, Kevin; Lys, Ihor

2017-10-17

An LED component according to the present invention comprising an array of LED chips mounted on a submount with the LED chips capable of emitting light in response to an electrical signal. The array can comprise LED chips emitting at two colors of light wherein the LED component emits light comprising the combination of the two colors of light. A single lens is included over the array of LED chips. The LED chip array can emit light of greater than 800 lumens with a drive current of less than 150 milli-Amps. The LED chip component can also operate at temperatures less than 3000 degrees K. In one embodiment, the LED array is in a substantially circular pattern on the submount.

Comparative clinical study using laser and LED-therapy for orofacial pain relief: dentin hypersensitivity and cervicogenic headache

NASA Astrophysics Data System (ADS)

Lizarelli, Rosane F. Z.; Pizzo, Renata C. A.; Florez, Fernando L. E.; Grecco, Clovis; Speciali, Jose G.; Bagnato, Vanderlei S.

2015-06-01

Considering several clinical situations, low intensity laser therapy has been widely applied in pain relief or analgesia mechanism. With the advent of new LED-based (light emitting diode) light sources, the need of further clinical experiments aiming to compare the effectiveness among them is paramount. The LED system therapeutic use can be denominated as LEDT - Light Emitting Diode Therapy. This study proposed two clinical evaluations of pain relief effect: to dentin hypersensitivity and to cervicogenic headache using different sources of lasers (low and high intensity) and light emitting diodes (LEDs), one emitting at the spectral band of red (630+/- 5nm) and the other one at infrared band (880+/- 5nm). Two different clinical studies were performed and presented interesting results. Considering dentin hypersensitivity, red and infrared led were so effective than the control group (high intensity laser system); by the other side, considering cervicogenic headache, control group (infrared laser) was the best treatment in comparison to red and infrared led system.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

PubMed

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

Weak-microcavity organic light-emitting diodes with improved light out-coupling.

PubMed

Cho, Sang-Hwan; Song, Young-Woo; Lee, Joon-gu; Kim, Yoon-Chang; Lee, Jong Hyuk; Ha, Jaeheung; Oh, Jong-Suk; Lee, So Young; Lee, Sun Young; Hwang, Kyu Hwan; Zang, Dong-Sik; Lee, Yong-Hee

2008-08-18

We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%, respectively, with improved color purity. Moreover, full-color passive-matrix bottom-emitting OLED displays are fabricated by employing low-index layers of two thicknesses. As a display, the EL efficiency of white color was 27% higher than that of a conventional OLED display.

Investigation of Light-Emitting Diode (LED) Point Light Source Color Visibility against Complex Multicolored Backgrounds

DTIC Science & Technology

2017-11-01

sent from light-emitting diodes (LEDs) of 5 colors ( green , red, white, amber, and blue). Experiment 1 involved controlled laboratory measurements of...A-4 Red LED calibration curves and quadratic curve fits with R2 values . 37 Fig. A-5 Green LED calibration curves and quadratic curve fits with R2...36 Table A-4 Red LED calibration measurements ................................................... 36 Table A-5 Green LED

Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Caruso, Fulvio; Mosca, Mauro; Rinella, Salvatore; Macaluso, Roberto; Calì, Claudio; Saiano, Filippo; Feltin, Eric

2016-01-01

We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the organic dye is compromised, resulting in a chromatic shift from Commission Internationale de l'Eclairage (CIE) ( x; y) coordinates (0.30;0.39) towards the color of the pump (0.15;0.04). Besides photodegradation of the dye, we address a phenomenon attributed to modification of the polymer matrix activated by the LED's blue light energy as confirmed by ultraviolet-visible and Fourier-transform infrared spectroscopic analyses. Three methods for improving the overall stability of the organic coating are presented.

Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature

NASA Astrophysics Data System (ADS)

Nishizawa, Nozomi; Aoyama, Masaki; Roca, Ronel C.; Nishibayashi, Kazuhiro; Munekata, Hiro

2018-05-01

We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an antiparallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of polarization with high speed, which is required for the practical use of lateral-type spin-LEDs as monolithic CPL light sources.

Organic light emitting diodes with structured electrodes

DOEpatents

Mao, Samuel S.; Liu, Gao; Johnson, Stephen G.

2012-12-04

A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

High-efficiency orange and tandem white organic light-emitting diodes using phosphorescent dyes with horizontally oriented emitting dipoles.

PubMed

Lee, Sunghun; Shin, Hyun; Kim, Jang-Joo

2014-09-03

Tandem white organic light-emitting diodes (WOLEDs) using horizontally oriented phosphorescent dyes in an exciplex-forming co-host are presented, along with an orange OLED. A high external quantum efficiency of 32% is achieved for the orange OLED at 1000 cd m(-2) and the tandem WOLEDs exhibit a high maximum EQE of 54.3% (PE of 63 lm W(-1)). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

NASA Astrophysics Data System (ADS)

Cusumano, P.

2016-02-01

We report the results of lifetime DC testing at constant current of not-encapsulated organic light emitting diodes (OLEDs) based on Tris (8 idroxyquinoline) aluminum (Alq3) as emitting material. In particular, a voltage decrease during the initial stage of the lifetime test is observed. The cause of this behavior is also discussed, mainly linked to initial Joule self-heating of the device, rising its temperature above room temperature until thermal equilibrium is reached at steady state.

Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

NASA Astrophysics Data System (ADS)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Telegin, K. Yu; Lobintsov, A. V.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Simakov, V. A.

2017-08-01

The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

Direct observation of back energy transfer in blue phosphorescent materials for organic light emitting diodes by time-resolved optical waveguide spectroscopy.

PubMed

Hirayama, H; Sugawara, Y; Miyashita, Y; Mitsuishi, M; Miyashita, T

2013-02-25

We demonstrate a high-sensitive transient absorption technique for detection of excited states in an organic thin film by time-resolved optical waveguide spectroscopy. By using a laser beam as a probe light, we detect small change in the transient absorbance which is equivalent to 10 -7 absorbance unit in a conventional method. This technique was applied to organic thin films of blue phosphorescent materials for organic light emitting diodes. We directly observed the back energy transfer from emitting guest molecules to conductive host molecules.

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

NASA Astrophysics Data System (ADS)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Shotton, Neil O. (Inventor); Ray, William Johnstone (Inventor)

2016-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Ray, William Johnstone (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2018-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2016-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Ray, William Johnstone (Inventor); Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2013-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Lowenthal, Mark D. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Shotton, Neil O. (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor)

2013-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5°. Consequently high efficiency high brightness arrays of micro-LEDs becomes possible. For single emitters the approach is particularly interesting for oscillator strength engineering allowing high speed data transmission and for single photonics applying single quantum dot (QD) emitters and allowing >90% coupling of the emission into single mode fiber. We also note that for longer wavelength ( 1300nm) QDs the thickness of the layers and surface patterns significantly increase allowing greatly reduced processing tolerances and applying further simplifications due to the possibility of using high contrast GaAs-AlOx DBRs.

Direct formation of nano-pillar arrays by phase separation of polymer blend for the enhanced out-coupling of organic light emitting diodes with low pixel blurring.

PubMed

Lee, Cholho; Han, Kyung-Hoon; Kim, Kwon-Hyeon; Kim, Jang-Joo

2016-03-21

We have demonstrated a simple and efficient method to fabricate OLEDs with enhanced out-coupling efficiencies and with low pixel blurring by inserting nano-pillar arrays prepared through the lateral phase separation of two immiscible polymers in a blend film. By selecting a proper solvent for the polymer and controlling the composition of the polymer blend, the nano-pillar arrays were formed directly after spin-coating of the polymer blend and selective removal of one phase, needing no complicated processes such as nano-imprint lithography. Pattern size and distribution were easily controlled by changing the composition and thickness of the polymer blend film. Phosphorescent OLEDs using the internal light extraction layer containing the nano-pillar arrays showed a 30% enhancement of the power efficiency, no spectral variation with the viewing angle, and only a small increment in pixel blurring. With these advantages, this newly developed method can be adopted for the commercial fabrication process of OLEDs for lighting and display applications.

Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

NASA Astrophysics Data System (ADS)

Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W.; Meyer, Glenn A.

1998-01-01

Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin®. Photofrin® is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin® is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin® has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin®. First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was measured in these cell lines by tumor DNA synthesis reduction. The effectiveness of BPD against tumor cells in vitro thus established, we have taken the first step toward determining its effectiveness in vivo. The second part of this project consisted of experiments performed to determine the maximum tolerated dose (MTD) of both BPD and LED light. At a light dose of 100 J/cm2, skin damage and neurotoxicity were seen at a BPD dose of 1.0 mg/kg, but not at a dose of 0.75 mg/kg. When BPD remained constant at 0.75 mg/kg, skin damage was seen at light dosages of 125 J/cm2, 150 J/cm2 and 175 J/cm2. One dog also died at a light dose of 175 J/cm2. Further studies will be needed to determine the effectiveness of BPD against tumor cells in vivo.

Light-emitting diode street lights reduce last-ditch evasive manoeuvres by moths to bat echolocation calls

PubMed Central

Wakefield, Andrew; Stone, Emma L.; Jones, Gareth; Harris, Stephen

2015-01-01

The light-emitting diode (LED) street light market is expanding globally, and it is important to understand how LED lights affect wildlife populations. We compared evasive flight responses of moths to bat echolocation calls experimentally under LED-lit and -unlit conditions. Significantly, fewer moths performed ‘powerdive’ flight manoeuvres in response to bat calls (feeding buzz sequences from Nyctalus spp.) under an LED street light than in the dark. LED street lights reduce the anti-predator behaviour of moths, shifting the balance in favour of their predators, aerial hawking bats. PMID:26361558

Eye safety related to near infrared radiation exposure to biometric devices.

PubMed

Kourkoumelis, Nikolaos; Tzaphlidou, Margaret

2011-03-01

Biometrics has become an emerging field of technology due to its intrinsic security features concerning the identification of individuals by means of measurable biological characteristics. Two of the most promising biometric modalities are iris and retina recognition, which primarily use nonionizing radiation in the infrared region. Illumination of the eye is achieved by infrared light emitting diodes (LEDs). Even if few LED sources are capable of causing direct eye damage as they emit incoherent light, there is a growing concern about the possible use of LED arrays that might pose a potential threat. Exposure to intense coherent infrared radiation has been proven to have significant effects on living tissues. The purpose of this study is to explore the biological effects arising from exposing the eye to near infrared radiation with reference to international legislation.

Thin randomly aligned hierarchical carbon nanotube arrays as ultrablack metamaterials

NASA Astrophysics Data System (ADS)

De Nicola, Francesco; Hines, Peter; De Crescenzi, Maurizio; Motta, Nunzio

2017-07-01

Ultrablack metamaterials are artificial materials able to harvest all the incident light regardless of wavelength, angle, or polarization. Here, we show the ultrablack properties of randomly aligned hierarchical carbon nanotube arrays with thicknesses below 200 nm. The thin coatings are realized by solution processing and dry-transfer deposition on different substrates. The hierarchical surface morphology of the coatings is biomimetic and provides a large effective area that improves the film optical absorption. Also, such a morphology is responsible for the moth-eye effect, which leads to the omnidirectional and polarization-independent suppression of optical reflection. The films exhibit an emissivity up to 99.36% typical of an ideal black body, resulting in the thinnest ultrablack metamaterial ever reported. Such a material may be exploited for thermal, optical, and optoelectronic devices such as heat sinks, optical shields, solar cells, light and thermal sensors, and light-emitting diodes.

Optical design of GaN nanowire arrays for photocatalytic applications

NASA Astrophysics Data System (ADS)

Winnerl, Julia; Hudeczek, Richard; Stutzmann, Martin

2018-05-01

GaN nanowire (NW) arrays are interesting candidates for photocatalytic applications due to their high surface-to-volume ratio and their waveguide character. The integration of GaN NW arrays on GaN-based light emitting diodes (LEDs), serving as a platform for electrically driven NW-based photocatalytic devices, enables an efficient coupling of the light from the planar LED to the GaN NWs. Here, we present a numerical study of the influence of the NW geometries, i.e., the NW diameter, length, and period, and the illumination wavelength on the transmission of GaN NW arrays on transparent substrates. A detailed numerical analysis reveals that the transmission characteristics for large periods are determined by the waveguide character of the single NW, whereas for dense GaN NW arrays inter-wire coupling and diffraction effects originating from the periodic arrangement of the GaN NWs dominate the transmission. The numerically simulated results are confirmed by experimental transmission measurements. We also investigate the influence of a dielectric NW shell and of the surrounding medium on the transmission characteristics of a GaN NW array.

High-power LED light sources for optical measurement systems operated in continuous and overdriven pulsed modes

NASA Astrophysics Data System (ADS)

Stasicki, Bolesław; Schröder, Andreas; Boden, Fritz; Ludwikowski, Krzysztof

2017-06-01

The rapid progress of light emitting diode (LED) technology has recently resulted in the availability of high power devices with unprecedented light emission intensities comparable to those of visible laser light sources. On this basis two versatile devices have been developed, constructed and tested. The first one is a high-power, single-LED illuminator equipped with exchangeable projection lenses providing a homogenous light spot of defined diameter. The second device is a multi-LED illuminator array consisting of a number of high-power LEDs, each integrated with a separate collimating lens. These devices can emit R, G, CG, B, UV or white light and can be operated in pulsed or continuous wave (CW) mode. Using an external trigger signal they can be easily synchronized with cameras or other devices. The mode of operation and all parameters can be controlled by software. Various experiments have shown that these devices have become a versatile and competitive alternative to laser and xenon lamp based light sources. The principle, design, achieved performances and application examples are given in this paper.

White organic light-emitting diodes with ultra-thin mixed emitting layer

NASA Astrophysics Data System (ADS)

Jeon, T.; Forget, S.; Chenais, S.; Geffroy, B.; Tondelier, D.; Bonnassieux, Y.; Ishow, E.

2012-02-01

White light can be obtained from Organic Light Emitting Diodes by mixing three primary colors, (i.e. red, green and blue) or two complementary colors in the emissive layer. In order to improve the efficiency and stability of the devices, a host-guest system is generally used as an emitting layer. However, the color balance to obtain white light is difficult to control and optimize because the spectrum is very sensitive to doping concentration (especially when a small amount of material is used). We use here an ultra-thin mixed emitting layer (UML) deposited by thermal evaporation to fabricate white organic light emitting diodes (WOLEDs) without co-evaporation. The UML was inserted in the hole-transporting layer consisting of 4, 4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (α-NPB) instead of using a conventional doping process. The UML was formed from a single evaporation boat containing a mixture of two dipolar starbust triarylamine molecules (fvin and fcho) presenting very similar structures and thermal properties and emitting in complementary spectral regions (orange and blue respectively) and mixed according to their weight ratio. The composition of the UML specifically allows for fine tuning of the emission color despite its very thin thickness down to 1 nm. Competitive energy transfer processes from fcho and the host interface toward fvin are key parameters to control the relative intensity between red and blue emission. White light with very good CIE 1931 color coordinate (0.34, 0.34) was obtained by simply adjusting the UML film composition.

Light-extraction enhancement for light-emitting diodes: a firefly-inspired structure refined by the genetic algorithm

NASA Astrophysics Data System (ADS)

Bay, Annick; Mayer, Alexandre

2014-09-01

The efficiency of light-emitting diodes (LED) has increased significantly over the past few years, but the overall efficiency is still limited by total internal reflections due to the high dielectric-constant contrast between the incident and emergent media. The bioluminescent organ of fireflies gave incentive for light-extraction enhance-ment studies. A specific factory-roof shaped structure was shown, by means of light-propagation simulations and measurements, to enhance light extraction significantly. In order to achieve a similar effect for light-emitting diodes, the structure needs to be adapted to the specific set-up of LEDs. In this context simulations were carried out to determine the best geometrical parameters. In the present work, the search for a geometry that maximizes the extraction of light has been conducted by using a genetic algorithm. The idealized structure considered previously was generalized to a broader variety of shapes. The genetic algorithm makes it possible to search simultaneously over a wider range of parameters. It is also significantly less time-consuming than the previous approach that was based on a systematic scan on parameters. The results of the genetic algorithm show that (1) the calculations can be performed in a smaller amount of time and (2) the light extraction can be enhanced even more significantly by using optimal parameters determined by the genetic algorithm for the generalized structure. The combination of the genetic algorithm with the Rigorous Coupled Waves Analysis method constitutes a strong simulation tool, which provides us with adapted designs for enhancing light extraction from light-emitting diodes.

Parallel phase-sensitive three-dimensional imaging camera

DOEpatents

Smithpeter, Colin L.; Hoover, Eddie R.; Pain, Bedabrata; Hancock, Bruce R.; Nellums, Robert O.

2007-09-25

An apparatus is disclosed for generating a three-dimensional (3-D) image of a scene illuminated by a pulsed light source (e.g. a laser or light-emitting diode). The apparatus, referred to as a phase-sensitive 3-D imaging camera utilizes a two-dimensional (2-D) array of photodetectors to receive light that is reflected or scattered from the scene and processes an electrical output signal from each photodetector in the 2-D array in parallel using multiple modulators, each having inputs of the photodetector output signal and a reference signal, with the reference signal provided to each modulator having a different phase delay. The output from each modulator is provided to a computational unit which can be used to generate intensity and range information for use in generating a 3-D image of the scene. The 3-D camera is capable of generating a 3-D image using a single pulse of light, or alternately can be used to generate subsequent 3-D images with each additional pulse of light.

Evaluation of Ho:KPb2Cl5 as a Diode-Pumpable Mid-IR Laser Material

DTIC Science & Technology

2016-09-01

is the decay of the upper laser level without emitting light , due to the simultaneous emission of enough lattice vibrational quanta (phonons) to...have an energy level spacing that can result in emission at the desired laser wavelength, and that state must emit light efficiently. It is also...extremely desirable that it absorb light in the wavelength region where laser diodes operate most efficiently, approximately 800–1000 nm. This enables

An earth-isolated optically coupled wideband high voltage probe powered by ambient light.

PubMed

Zhai, Xiang; Bellan, Paul M

2012-10-01

An earth-isolated optically-coupled wideband high voltage probe has been developed for pulsed power applications. The probe uses a capacitive voltage divider coupled to a fast light-emitting diode that converts high voltage into an amplitude-modulated optical signal, which is then conveyed to a receiver via an optical fiber. A solar cell array, powered by ambient laboratory lighting, charges a capacitor that, when triggered, acts as a short-duration power supply for an on-board amplifier in the probe. The entire system has a noise level ≤0.03 kV, a DC-5 MHz bandwidth, and a measurement range from -6 to 2 kV; this range can be conveniently adjusted.

Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

ERIC Educational Resources Information Center

Kamata, Masahiro; Abe, Mayumi

2012-01-01

A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

Light-emitting diode technology status and directions: Opportunities for horticultural lighting

DOE PAGES

Tsao, Jeffrey Y.; Pattison, P. Morgan; Krames, Michael R.

2016-01-01

Here, light-emitting diode (LED) technology has advanced rapidly over the last decade, primarily driven by display and general illumination applications ("solid-state lighting (SSL) for humans"). These advancements have made LED lighting technically and economically advantageous not only for these applications, but also, as an indirect benefit, for adjacent applications such as horticultural lighting ("SSL for plants"). Moreover, LED technology has much room for continued improvement. In the near-term, these improvements will continue to be driven by SSL for humans (with indirect benefit to SSL for plants), the most important of which can be anticipated.

Poly (p-phenyleneneacetylene) light-emitting diodes

DOEpatents

Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei; Barton, Thomas J.; Vardeny, Zeev V.

1994-10-04

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Poly (p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

1994-10-04

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

1994-08-02

Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei

1994-08-02

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

White Light-Emitting Diodes Based on AgInS2/ZnS Quantum Dots with Improved Bandwidth in Visible Light Communication

PubMed Central

Ruan, Cheng; Zhang, Yu; Lu, Min; Ji, Changyin; Sun, Chun; Chen, Xiongbin; Chen, Hongda; Colvin, Vicki L.; Yu, William W.

2016-01-01

Quantum dot white light-emitting diodes (QD-WLEDs) were fabricated from green- and red-emitting AgInS2/ZnS core/shell QDs coated on GaN LEDs. Their electroluminescence (EL) spectra were measured at different currents, ranging from 50 mA to 400 mA, and showed good color stability. The modulation bandwidth of previously prepared QD-WLEDs was confirmed to be much wider than that of YAG:Ce phosphor-based WLEDs. These results indicate that the AgInS2/ZnS core/shell QDs are good color-converting materials for WLEDs and they are capable in visible light communication (VLC). PMID:28344270

Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

PubMed

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-01-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

PubMed

Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

2012-07-01

White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

Mn2- x Y x (MoO4)3 Phosphor Excited by UV GaN-Based Light-Emitting Diode for White Emission

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Tseng, Zong-Liang; Hsu, Ting-Chun; Yang, Shengyi; Chen, Yuan-Bin

2017-04-01

One option for low-cost white light-emitting diodes (LEDs) is the combination of a near-ultraviolet (UV) LED chip (382 nm) and a single phosphor. Such Mn2- x Y x (MoO4)3 single phosphors have been fabricated by a simple solid-state reaction route and their emission color tuned by controlling the Mn doping amount. The chromaticity coordinates of the white light emitted by the UV GaN LED with the MnY(MoO4)3 phosphor were x = 0.5204 and y = 0.4050 [correlated color temperature (CCT) = 7958 K].

[The dangers of blue light: True story!].

PubMed

Renard, G; Leid, J

2016-05-01

The dangers of the blue light are the object of numerous publications, for both the scientific community and the general public. The new prolific development of light sources emitting potentially toxic blue light (415-455nm) ranges from LED (Light Emitting Diodes) lamps for interior lighting to television screens, computers, digital tablets and smartphones using OLED (Organic Light Emitting Diode) or AMOLED (Active-Matrix Organic Light Emitting Diode) technology. First we will review some technical terms and the main characteristics of light perceived by the human eye. Then we will discuss scientific proof of the toxicity of blue light to the eye, which may cause cataract or macular degeneration. Analysis of the light spectra of several light sources, from natural light to LED lamps, will allow us to specify even better the dangers related to each light source. LED lamps, whether used as components for interior lighting or screens, are of concern if they are used for extended viewing times and at short distance. While we can protect ourselves from natural blue light by wearing colored glasses which filter out, on both front and back surfaces, the toxic wavelengths, it is more difficult to protect oneself from LED lamps in internal lighting, the use of which should be restricted to "white warmth" lamps (2700K). As far as OLED or AMOLED screens are concerned, the only effective protection consists of using them occasionally and only for a short period of time. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

NASA Astrophysics Data System (ADS)

Muramoto, Yoshihiko; Kimura, Masahiro; Nouda, Suguru

2014-06-01

Ultraviolet light-emitting diodes (UV-LEDs) have started replacing UV lamps. The power per LED of high-power LED products has reached 12 W (14 A), which is 100 times the values observed ten years ago. In addition, the cost of these high-power LEDs has been decreasing. In this study, we attempt to understand the technologies and potential of UV-LEDs.

Safety of light emitting diodes in toys.

PubMed

Higlett, M P; O'Hagan, J B; Khazova, M

2012-03-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

An electron transporting unit linked multifunctional Ir(III) complex: a promising strategy to improve the performance of solution-processed phosphorescent organic light-emitting diodes.

PubMed

Giridhar, Thota; Saravanan, Chinnusamy; Cho, Woosum; Park, Young Geun; Lee, Jin Yong; Jin, Sung-Ho

2014-04-18

An oxadiazole based electron transporting (ET) unit was glued to the heteroleptic Ir(III) complex (TPQIr-ET) and used as a dopant for phosphorescent organic light-emitting diodes (PhOLEDs). It shows superior device performance than the dopant without the ET unit (TPQIr) due to the balanced charge carrier injection by the ET unit.

Note: A portable, light-emitting diode-based ruby fluorescence spectrometer for high-pressure calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng Yejun

2011-04-15

Ruby (Al{sub 2}O{sub 3}, with {approx}0.5 wt. % Cr doping) is one of the most widely used manometers at the giga-Pascal scale. Traditionally, its fluorescence is excited with intense laser sources. Here, I present a simple, robust, and portable design that employs light-emitting diodes (LEDs) instead. This LED-based system is safer in comparison with laser-based ones.

Photobiology eye safety for horticultural LED lighting: Transmittance performance of eyewear protection using high-irradiant monochromatic LEDs.

PubMed

Wu, Bo-Sen; Lefsrud, Mark G

2018-02-01

Light emitting diodes have slowly gained market share as horticultural lighting systems in greenhouses due to their rapid improvement in color performances and light outputs. These advancements have increased the availability of the full spectrum of visible wavelengths and the corresponding irradiance outputs available to plants. However, light emitting diodes owners have limited information on the proper options for personal eyewear protection as the irradiance levels have increased. The objective of this study was to measure the light transmittance performance of 12 eyewear protection including welding goggles, safety goggles, polarized glasses, and sunglasses across the human visible spectrum (380-740 nm) up to an irradiance level of 1500 W·m -2 from high-irradiant light emitting diodes assemblies. Based on the spectral measurements, certain transmitted spectra exhibited spectrum shifts or an alteration in the bimodal distribution which were different than the light emitting diodes spectra, due to the uneven transmittance efficiencies of the glasses. As for the measured transmittance percentages in two experiments, each type of eyewear protection showed distinct transmittance performances, and the performance of the tested eyewear protection was not impacted by irradiance but was dependent on the wavelength. The mean light transmittance was 1.77% for the welding glasses, 13.12% for the polarized glasses, 15.27% for the safety goggles, and 27.65% for the sunglasses. According to these measured results and the spectral weighting exposure limits from the International Electrotechnical Commission 62471 and EU directive 2006/25, consumers and workers using horticultural lighting can select welding goggles or polarized glasses, to limit the possible ocular impact of the high irradiance of monochromatic light in electrical lighting environment. Sunglasses and safety goggles would not be advised as protection, especially if infrared radiation was used.

Si light-emitting device in integrated photonic CMOS ICs

NASA Astrophysics Data System (ADS)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

PubMed

Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

2018-06-11

Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

CdS nanorods/organic hybrid LED array and the piezo-phototronic effect of the device for pressure mapping.

PubMed

Bao, Rongrong; Wang, Chunfeng; Dong, Lin; Shen, Changyu; Zhao, Kun; Pan, Caofeng

2016-04-21

As widely applied in light-emitting diodes and optical devices, CdS has attracted the attention of many researchers due to its nonlinear properties and piezo-electronic effect. Here, we demonstrate a LED array composed of PSS and CdS nanorods and research the piezo-photonic effect of the array device. The emission intensity of the device depends on the electron-hole recombination at the interface of the p-n junction which can be adjusted using the piezo-phototronic effect and can be used to map the pressure applied on the surface of the device with spatial resolution as high as 1.5 μm. A flexible LED device array has been prepared using a CdS nanorod array on a Au/Cr/kapton substrate. This device may be used in the field of strain mapping using its high pressure spatial-resolution and flexibility.

Superconducting micro-resonator arrays with ideal frequency spacing

NASA Astrophysics Data System (ADS)

Liu, X.; Guo, W.; Wang, Y.; Dai, M.; Wei, L. F.; Dober, B.; McKenney, C. M.; Hilton, G. C.; Hubmayr, J.; Austermann, J. E.; Ullom, J. N.; Gao, J.; Vissers, M. R.

2017-12-01

We present a wafer trimming technique for producing superconducting micro-resonator arrays with highly uniform frequency spacing. With the light-emitting diode mapper technique demonstrated previously, we first map the measured resonance frequencies to the physical resonators. Then, we fine-tune each resonator's frequency by lithographically trimming a small length, calculated from the deviation of the measured frequency from its design value, from the interdigitated capacitor. We demonstrate this technique on a 127-resonator array made from titanium-nitride and show that the uniformity of frequency spacing is greatly improved. The array yield in terms of frequency collisions improves from 84% to 97%, while the quality factors and noise properties are unaffected. The wafer trimming technique provides an easy-to-implement tool to improve the yield and multiplexing density of large resonator arrays, which is important for various applications in photon detection and quantum computing.

Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates.

PubMed

Chen, Shuming; Kwok, Hoi Sing

2010-01-04

Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost-effective method to rough the substrates and hence to scatter the light. By simply sand-blasting the edges and back-side surface of the glass substrates, a 20% improvement of forward efficiency has been demonstrated. Moreover, due to scattering effect, a constant color over all viewing angles and uniform light pattern with Lambertian distribution has been obtained. This simple and cost-effective method may be suitable for mass production of large-area OLEDs for lighting applications.

Thin planar package for cooling an array of edge-emitting laser diodes

DOEpatents

Mundinger, David C.; Benett, William J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar assemblies and active cooling of each assembly. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar assembly having the laser diode bar located proximate to one edge. In an array, a number of such thin planar assemblies are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink proximate to the laser diode bar to absorb heat generated by laser operation. To provide the coolant to the microchannels, each thin planar assembly comprises passageways that connect the microchannels to inlet and outlet corridors. Each inlet passageway may comprise a narrow slot that directs coolant into the microchannels and increases the velocity of flow therethrough. The corridors comprises holes extending through each of the assemblies in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has applications as an optical pump for high power solid state lasers, or by mating the diodes with fiber optic lenses. Further, the arrays can be useful in applications having space constraints and energy limitations, and in military and space applications. The arrays can be incorporated in equipment such as communications devices and active sensors.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor); Lowenthal, Mark David (Inventor); Shotton, Neil O. (Inventor)

2014-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor)

2013-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substrate particles to the at least one first conductor; converting the plurality of substrate particles into a plurality of diodes; forming at least one second conductor coupled to the plurality of spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer, with the lenses and the suspending polymer having different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Blanchard, Richard A. (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor)

2012-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor); Frazier, Donald Odell (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor)

2013-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Integrated parabolic nanolenses on MicroLED color pixels

NASA Astrophysics Data System (ADS)

Demory, Brandon; Chung, Kunook; Katcher, Adam; Sui, Jingyang; Deng, Hui; Ku, Pei-Cheng

2018-04-01

A parabolic nanolens array coupled to the emission of a nanopillar micro-light emitting diode (LED) color pixel is shown to reduce the far field divergence. For a blue wavelength LED, the total emission is 95% collimated within a 0.5 numerical aperture zone, a 3.5x improvement over the same LED without a lens structure. This corresponds to a half-width at half-maximum (HWHM) line width reduction of 2.85 times. Using a resist reflow and etchback procedure, the nanolens array dimensions and parabolic shape are formed. Experimental measurement of the far field emission shows a HWHM linewidth reduction by a factor of 2x, reducing the divergence over the original LED.

Integrated parabolic nanolenses on MicroLED color pixels.

PubMed

Demory, Brandon; Chung, Kunook; Katcher, Adam; Sui, Jingyang; Deng, Hui; Ku, Pei-Cheng

2018-04-20

A parabolic nanolens array coupled to the emission of a nanopillar micro-light emitting diode (LED) color pixel is shown to reduce the far field divergence. For a blue wavelength LED, the total emission is 95% collimated within a 0.5 numerical aperture zone, a 3.5x improvement over the same LED without a lens structure. This corresponds to a half-width at half-maximum (HWHM) line width reduction of 2.85 times. Using a resist reflow and etchback procedure, the nanolens array dimensions and parabolic shape are formed. Experimental measurement of the far field emission shows a HWHM linewidth reduction by a factor of 2x, reducing the divergence over the original LED.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

NASA Astrophysics Data System (ADS)

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2018-02-01

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color ( 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer.

PubMed

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; Ng, Tien Khee; Ooi, Boon S

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

A promising red-emitting phosphor for white-light-emitting diodes prepared by a modified solid-state reaction

NASA Astrophysics Data System (ADS)

Ren, Fuqiang; Chen, Donghua

2010-02-01

Using urea, boric acid and polyethylene glycol (PEG) as auxiliary reagents, the novel red-emitting phosphors Ca 19Zn 2 (PO 4) 14:Eu 3+ have been successfully synthesized by a modified solid-state reaction. Thermogravimetric (TG) analysis, X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectra were used to characterize the resulting phosphors. The dependence of the photoluminescence properties of Ca 19Zn 2 (PO 4) 14:Eu 3+ phosphors upon urea, boric acid and PEG concentration and the quadric-sintered temperature were investigated. Luminescent measurements showed that the phosphors can be efficiently excited by ultraviolet (UV) to visible region, emitting a red light with a peak wavelength of 616 nm. The material has potential application as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs).

Inkjet-Printed Small-Molecule Organic Light-Emitting Diodes: Halogen-Free Inks, Printing Optimization, and Large-Area Patterning.

PubMed

Zhou, Lu; Yang, Lei; Yu, Mengjie; Jiang, Yi; Liu, Cheng-Fang; Lai, Wen-Yong; Huang, Wei

2017-11-22

Manufacturing small-molecule organic light-emitting diodes (OLEDs) via inkjet printing is rather attractive for realizing high-efficiency and long-life-span devices, yet it is challenging. In this paper, we present our efforts on systematical investigation and optimization of the ink properties and the printing process to enable facile inkjet printing of conjugated light-emitting small molecules. Various factors on influencing the inkjet-printed film quality during the droplet generation, the ink spreading on the substrates, and its solidification processes have been systematically investigated and optimized. Consequently, halogen-free inks have been developed and large-area patterning inkjet printing on flexible substrates with efficient blue emission has been successfully demonstrated. Moreover, OLEDs manufactured by inkjet printing the light-emitting small molecules manifested superior performance as compared with their corresponding spin-cast counterparts.

Integrated RGB laser light module for autostereoscopic outdoor displays

NASA Astrophysics Data System (ADS)

Reitterer, Jörg; Fidler, Franz; Hambeck, Christian; Saint Julien-Wallsee, Ferdinand; Najda, Stephen; Perlin, Piotr; Stanczyk, Szymon; Czernecki, Robert; McDougall, Stewart D.; Meredith, Wyn; Vickers, Garrie; Landles, Kennedy; Schmid, Ulrich

2015-02-01

We have developed highly compact RGB laser light modules to be used as light sources in multi-view autostereoscopic outdoor displays and projection devices. Each light module consists of an AlGaInP red laser diode, a GaInN blue laser diode, a GaInN green laser diode, as well as a common cylindrical microlens. The plano-convex microlens is a so-called "fast axis collimator", which is widely used for collimating light beams emitted from high-power laser diode bars, and has been optimized for polychromatic RGB laser diodes. The three light beams emitted from the red, green, and blue laser diodes are collimated in only one transverse direction, the so-called "fast axis", and in the orthogonal direction, the so-called "slow axis", the beams pass the microlens uncollimated. In the far field of the integrated RGB light module this produces Gaussian beams with a large ellipticity which are required, e.g., for the application in autostereoscopic outdoor displays. For this application only very low optical output powers of a few milliwatts per laser diode are required and therefore we have developed tailored low-power laser diode chips with short cavity lengths of 250 μm for red and 300 μm for blue. Our RGB laser light module including the three laser diode chips, associated monitor photodiodes, the common microlens, as well as the hermetically sealed package has a total volume of only 0.45 cm³, which to our knowledge is the smallest RGB laser light source to date.

Fabrication of large-area nano-scale patterned sapphire substrate with laser interference lithography

NASA Astrophysics Data System (ADS)

Xuan, Ming-dong; Dai, Long-gui; Jia, Hai-qiang; Chen, Hong

2014-01-01

Periodic triangle truncated pyramid arrays are successfully fabricated on the sapphire substrate by a low-cost and high-efficiency laser interference lithography (LIL) system. Through the combination of dry etching and wet etching techniques, the nano-scale patterned sapphire substrate (NPSS) with uniform size is prepared. The period of the patterns is 460 nm as designed to match the wavelength of blue light emitting diode (LED). By improving the stability of the LIL system and optimizing the process parameters, well-defined triangle truncated pyramid arrays can be achieved on the sapphire substrate with diameter of 50.8 mm. The deviation of the bottom width of the triangle truncated pyramid arrays is 6.8%, which is close to the industrial production level of 3%.

Monolithic translucent BaMgAl 10O 17:Eu 2+ phosphors for laser-driven solid state lighting

DOE PAGES

Cozzan, Clayton; Brady, Michael J.; O’Dea, Nicholas; ...

2016-10-11

With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl 10O 17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). Lastly, the resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

LIGHT-EMITTING DIODE TECHNOLOGY IMPROVES INSECT TRAPPING

PubMed Central

GILLEN, JONATHON I.; MUNSTERMANN, LEONARD E.

2008-01-01

In a climate of increased funding for vaccines, chemotherapy, and prevention of vector-borne diseases, fewer resources have been directed toward improving disease and vector surveillance. Recently developed light-emitting diode (LED) technology was applied to standard insect-vector traps to produce a more effective lighting system. This approach improved phlebotomine sand fly capture rates by 50%, and simultaneously reduced the energy consumption by 50–60%. The LEDs were incorporated into 2 lighting designs, 1) a LED combination bulb for current light traps and 2) a chip-based LED design for a modified Centers for Disease Control and Prevention light trap. Detailed descriptions of the 2 designs are presented. PMID:18666546

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Kao, Yu-Jui; Yang, Ya-Yu; Sheu, Jinn-Kong

2012-02-27

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

A simple and portable colorimeter using a red-green-blue light-emitting diode and its application to the on-site determination of nitrite and iron in river-water.

PubMed

Suzuki, Yasutada; Aruga, Terutomi; Kuwahara, Hiroyuki; Kitamura, Miki; Kuwabara, Tetsuo; Kawakubo, Susumu; Iwatsuki, Masaaki

2004-06-01

A portable colorimeter using a red-green-blue light-emitting diode as a light source has been developed. An embedded controller sequentially turns emitters on and off, and acquires the signals detected by two photo diodes synchronized with their blinking. The controller calculates the absorbance and displays it on a liquid-crystal display. The whole system, including a 006P dry cell, is contained in a 100 x 70 x 50 mm aluminum case and its mass is 280 g. This colorimeter was successfully applied to the on-site determination of nitrite and iron in river-water.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bansal, Kanika; Datta, Shouvik; Henini, Mohamed

2014-09-22

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Regression analysis for LED color detection of visual-MIMO system

NASA Astrophysics Data System (ADS)

Banik, Partha Pratim; Saha, Rappy; Kim, Ki-Doo

2018-04-01

Color detection from a light emitting diode (LED) array using a smartphone camera is very difficult in a visual multiple-input multiple-output (visual-MIMO) system. In this paper, we propose a method to determine the LED color using a smartphone camera by applying regression analysis. We employ a multivariate regression model to identify the LED color. After taking a picture of an LED array, we select the LED array region, and detect the LED using an image processing algorithm. We then apply the k-means clustering algorithm to determine the number of potential colors for feature extraction of each LED. Finally, we apply the multivariate regression model to predict the color of the transmitted LEDs. In this paper, we show our results for three types of environmental light condition: room environmental light, low environmental light (560 lux), and strong environmental light (2450 lux). We compare the results of our proposed algorithm from the analysis of training and test R-Square (%) values, percentage of closeness of transmitted and predicted colors, and we also mention about the number of distorted test data points from the analysis of distortion bar graph in CIE1931 color space.

All-solution processed transparent organic light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Min; Höfle, Stefan; Czolk, Jens; Mertens, Adrian; Colsmann, Alexander

2015-11-01

In this work, we report on indium tin oxide-free, all-solution processed transparent organic light emitting diodes (OLEDs) with inverted device architecture. Conductive polymer layers are employed as both transparent cathodes and transparent anodes, with the top anodes having enhanced conductivities from a supporting stochastic silver nanowire mesh. Both electrodes exhibit transmittances of 80-90% in the visible spectral regime. Upon the incorporation of either yellow- or blue-light emitting fluorescent polymers, the OLEDs show low onset voltages, demonstrating excellent charge carrier injection from the polymer electrodes into the emission layers. Overall luminances and current efficiencies equal the performance of opaque reference OLEDs with indium tin oxide and aluminium electrodes, proving excellent charge carrier-to-light conversion within the device.

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

NASA Astrophysics Data System (ADS)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

Detection-gap-independent optical sensor design using divergence-beam-controlled slit lasers for wearable devices

NASA Astrophysics Data System (ADS)

Yoon, Young Zoon; Kim, Hyochul; Park, Yeonsang; Kim, Jineun; Lee, Min Kyung; Kim, Un Jeong; Roh, Young-Geun; Hwang, Sung Woo

2016-09-01

Wearable devices often employ optical sensors, such as photoplethysmography sensors, for detecting heart rates or other biochemical factors. Pulse waveforms, rather than simply detecting heartbeats, can clarify arterial conditions. However, most optical sensor designs require close skin contact to reduce power consumption while obtaining good quality signals without distortion. We have designed a detection-gap-independent optical sensor array using divergence-beam-controlled slit lasers and distributed photodiodes in a pulse-detection device wearable over the wrist's radial artery. It achieves high biosignal quality and low power consumption. The top surface of a vertical-cavity surface-emitting laser of 850 nm wavelength was covered by Au film with an open slit of width between 500 nm and 1500 nm, which generated laser emissions across a large divergence angle along an axis orthogonal to the slit direction. The sensing coverage of the slit laser diode (LD) marks a 50% improvement over nonslit LD sensor coverage. The slit LD sensor consumes 100% more input power than the nonslit LD sensor to obtain similar optical output power. The slit laser sensor showed intermediate performance between LD and light-emitting diode sensors. Thus, designing sensors with multiple-slit LD arrays can provide useful and convenient ways for incorporating optical sensors in wrist-wearable devices.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Degradation phenomena in laser diodes

NASA Astrophysics Data System (ADS)

Beister, G.; Krispin, P.; Maege, J.; Richter, G.; Weber, H.; Rechenberg, I.

1988-11-01

Accelerated tests on GaAlAs/GaAs double heterostructure laser diodes showed, in agreement with earlier results on light-emitting diodes, that ageing appeared in three distinct forms: initial and slow degradation stages, both obeying a logarithmic time dependence, and a superimposed "gradation" (enhancement of the output power). Measurements made by the method of deep level transient spectroscopy during the accelerated tests on these lasers, operated as light-emitting diodes, revealed the appearance right from the beginning of B levels attributed to the antisite GaAs defects. The B levels appeared again in diodes tested in the lasing mode. In the case of a group of 21 laser diodes the mean time-to-failure was 9000 h at 70°C for 5 mW (in accordance with the Weibull statistics of degradation rates).

Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Trybus, Elaissa; Cheung, Maurice C.; Doolittle, W. Alan; Cartwright, Alexander N.; Ferguson, Ian; Seong, Tae-Yeon; Nause, Jeff

2010-02-01

We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

Inkjet Printing of Organic Light-Emitting Diodes Based on Alcohol-Soluble Polyfluorenes

NASA Astrophysics Data System (ADS)

Odod, A. V.; Gadirov, R. M.; Solodova, T. A.; Kurtsevich, A. E.; Il'gach, D. M.; Yakimanskii, A. V.; Burtman, V.; Kopylova, T. N.

2018-04-01

Ink compositions for inkjet printing based on poly(9.9-dioctylfluorene) and its alcohol-soluble analog are created. Current-voltage, brightness-voltage, and spectral characteristics are compared for one- and twolayer polymer structures of organic light-emitting diodes. It is shown that the efficiency of the alcohol-soluble polyfluorene analog is higher compared to poly(9.9-dioctylfluorene), and the possibility of viscosity optimization is higher compared to aromatic chlorinated solvents.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering.

PubMed

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Murali, Banavoth; Sarmah, Smritakshi P; Yuan, Mingjian; Sinatra, Lutfan; Alyami, Noktan M; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N; Mohammed, Omar F; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H; Bakr, Osman M

2016-10-01

A two-step ligand-exchange strategy is developed, in which the long-carbon- chain ligands on all-inorganic perovskite (CsPbX 3 , X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-pair-capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Axial diffusion barriers in near-infrared nanopillar LEDs.

PubMed

Scofield, Adam C; Lin, Andrew; Haddad, Michael; Huffaker, Diana L

2014-11-12

The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prudaev, I. A., E-mail: funcelab@gmail.com; Kopyev, V. V.; Romanov, I. S.

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulationmore » results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.« less

Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Hui-Lung Lai,; Jyu-Yu Chang,

2010-05-01

In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

New Driving Scheme to Improve Hysteresis Characteristics of Organic Thin Film Transistor-Driven Active-Matrix Organic Light Emitting Diode Display

NASA Astrophysics Data System (ADS)

Yamamoto, Toshihiro; Nakajima, Yoshiki; Takei, Tatsuya; Fujisaki, Yoshihide; Fukagawa, Hirohiko; Suzuki, Mitsunori; Motomura, Genichi; Sato, Hiroto; Tokito, Shizuo; Fujikake, Hideo

2011-02-01

A new driving scheme for an active-matrix organic light emitting diode (AMOLED) display was developed to prevent the picture quality degradation caused by the hysteresis characteristics of organic thin film transistors (OTFTs). In this driving scheme, the gate electrode voltage of a driving-OTFT is directly controlled through the storage capacitor so that the operating point for the driving-OTFT is on the same hysteresis curve for every pixel after signal data are stored in the storage capacitor. Although the number of OTFTs in each pixel for the AMOLED display is restricted because OTFT size should be large enough to drive organic light emitting diodes (OLEDs) due to their small carrier mobility, it can improve the picture quality for an OTFT-driven flexible OLED display with the basic two transistor-one capacitor circuitry.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

PubMed

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography.

PubMed

Huang, H W; Lin, C H; Yu, C C; Lee, B D; Chiu, C H; Lai, C F; Kuo, H C; Leung, K M; Lu, T C; Wang, S C

2008-05-07

Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

Simple Experimental Verification of the Relation between the Band-Gap Energy and the Energy of Photons Emitted by LEDs

ERIC Educational Resources Information Center

Precker, Jurgen W.

2007-01-01

The wavelength of the light emitted by a light-emitting diode (LED) is intimately related to the band-gap energy of the semiconductor from which the LED is made. We experimentally estimate the band-gap energies of several types of LEDs, and compare them with the energies of the emitted light, which ranges from infrared to white. In spite of…

Integrated photodiodes complement the VCSEL platform

NASA Astrophysics Data System (ADS)

Grabherr, Martin; Gerlach, Philipp; King, Roger; Jäger, Roland

2009-02-01

Many VCSEL based applications require optical feedback of the emitted light. E.g. light output monitor functions in transceivers are used to compensate for thermally induced power variation, power degradation, or even breakdown of pixels if logic for redundancy is available. In this case integrated photodiodes offer less complex assembly compared to widely used hybrid solutions, e.g. known in LC-TOSA assemblies. Especially for chip-on-board (COB) assembly and array configurations, integrated monitor diodes offer a simple and compact power monitoring possibility. For 850 nm VCSELs the integrated photodiodes can be placed between substrate and bottom-DBR, on top of the top-DBR, or inbetween the layer sequence of one DBR. Integrated intra-cavity photodiodes offer superior characteristics in terms of reduced sensitivity for spontaneously emitted light [1] and thus are very well suited for power monitoring or even endof- life (EOL) detection. We present an advanced device design for an intra-cavity photodiode and according performance data in comparison with competing approaches.

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarthy, M. A.; Liu, B.; Donoghue, E. P.

2011-01-01

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

Color stable white phosphorescent organic light emitting diodes with red emissive electron transport layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wook Kim, Jin; Yoo, Seung Il; Sung Kang, Jin

2015-06-28

We analyzed the performance of multi-emissive white phosphorescent organic light-emitting diodes (PHOLEDs) in relation to various red emitting sites of hole and electron transport layers (HTL and ETL). The shift of the recombination zone producing stable white emission in PHOLEDs was utilized as luminance was increased with red emission in its electron transport layer. Multi-emissive white PHOLEDs including the red light emitting electron transport layer yielded maximum external quantum efficiency of 17.4% with CIE color coordinates (−0.030, +0.001) shifting only from 1000 to 10 000 cd/m{sup 2}. Additionally, we observed a reduction of energy loss in the white PHOLED via Ir(piq){submore » 3} as phosphorescent red dopant in electron transport layer.« less

Purely organic electroluminescent material realizing 100% conversion from electricity to light

PubMed Central

Kaji, Hironori; Suzuki, Hajime; Fukushima, Tatsuya; Shizu, Katsuyuki; Suzuki, Katsuaki; Kubo, Shosei; Komino, Takeshi; Oiwa, Hajime; Suzuki, Furitsu; Wakamiya, Atsushi; Murata, Yasujiro; Adachi, Chihaya

2015-01-01

Efficient organic light-emitting diodes have been developed using emitters containing rare metals, such as platinum and iridium complexes. However, there is an urgent need to develop emitters composed of more abundant materials. Here we show a thermally activated delayed fluorescence material for organic light-emitting diodes, which realizes both approximately 100% photoluminescence quantum yield and approximately 100% up-conversion of the triplet to singlet excited state. The material contains electron-donating diphenylaminocarbazole and electron-accepting triphenyltriazine moieties. The typical trade-off between effective emission and triplet-to-singlet up-conversion is overcome by fine-tuning the highest occupied molecular orbital and lowest unoccupied molecular orbital distributions. The nearly zero singlet–triplet energy gap, smaller than the thermal energy at room temperature, results in an organic light-emitting diode with external quantum efficiency of 29.6%. An external quantum efficiency of 41.5% is obtained when using an out-coupling sheet. The external quantum efficiency is 30.7% even at a high luminance of 3,000 cd m−2. PMID:26477390

Demonstration of a large-size horizontal light-field display based on the LED panel and the micro-pinhole unit array

NASA Astrophysics Data System (ADS)

Yang, Le; Sang, Xinzhu; Yu, Xunbo; Liu, Boyang; Liu, Li; Yang, Shenwu; Yan, Binbin; Du, Jingyan; Gao, Chao

2018-05-01

A 54-inch horizontal-parallax only light-field display based on the light-emitting diode (LED) panel and the micro-pinhole unit array (MPUA) is demonstrated. Normally, the perceived 3D effect of the three-dimensional (3D) display with smooth motion parallax and abundant light-field information can be enhanced with increasing the density of viewpoints. However, the density of viewpoints is inversely proportional to the spatial display resolution for the conventional integral imaging. Here, a special MPUA is designed and fabricated, and the displayed 3D scene constructed by the proposed horizontal light-field display is presented. Compared with the conventional integral imaging, both the density of horizontal viewpoints and the spatial display resolution are significantly improved. In the experiment, A 54-inch horizontal light-field display with 42.8° viewing angle based on the LED panel with the resolution of 1280 × 720 and the MPUA is realized, which can provide natural 3D visual effect to observers with high quality.

Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm

NASA Astrophysics Data System (ADS)

Yang, Pao-Keng

2011-09-01

We present a simple algorithm, combining an interpolating method with an iterative calculation, to enhance the resolution of spectral reflectance by removing the spectral broadening effect due to the finite bandwidth of the light-emitting diode (LED) from it. The proposed algorithm can be used to improve the accuracy of a reflective colorimeter using multicolor LEDs as probing light sources and is also applicable to the case when the probing LEDs have different bandwidths in different spectral ranges, to which the powerful deconvolution method cannot be applied.

Exciton enhancement and exciplex quenching by plasmonic effect of Aluminum nanoparticle arrays in a blue organic light emitting diode.

PubMed

Khadir, Samira; Diallo, AmadouThierno; Chakaroun, Mahmoud; Boudrioua, Azzedine

2017-05-01

We report the investigation of plasmonic effect of array of aluminum nanoparticles (Al-NPs) on blue micro-OLED subject to exciplex emission. N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB) andcarbazol derivative 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP) have been used as the emitting layer (EML) and hole transport layer (HTL), respectively. For the reference µ-OLED without Al-NPs, we observed two emission peaks attributed to CBP emission and exciplex emission formed at the NPB/CBP (EML/HTL) interface. By the incorporation of the Al-NPs array, obtained by e-beam lithography technique on the ITO anode, the exciplex emission has been widely depressed. Moreover, thanks to localized surface plasmon resonance (LSPR), an enhancement of the CBP emission has been achieved indicating an efficient energy coupling between the LSPR of the Al-NPs and the CBP excitons. Thus, an enhancement of about 20% of the efficiency of the µ-OLED with Al-NPs in comparison to the reference device has been obtained.

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

PubMed

Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

2015-04-06

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

Organic light-emitting diodes with direct contact-printed red, green, blue, and white light-emitting layers

NASA Astrophysics Data System (ADS)

Chen, Sun-Zen; Peng, Shiang-Hau; Ting, Tzu-Yu; Wu, Po-Shien; Lin, Chun-Hao; Chang, Chin-Yeh; Shyue, Jing-Jong; Jou, Jwo-Huei

2012-10-01

We demonstrate the feasibility of using direct contact-printing in the fabrication of monochromatic and polychromatic organic light-emitting diodes (OLEDs). Bright devices with red, green, blue, and white contact-printed light-emitting layers with a respective maximum luminance of 29 000, 29 000, 4000, and 18 000 cd/m2 were obtained with sound film integrity by blending a polymeric host into a molecular host. For the red OLED as example, the maximum luminance was decreased from 29 000 to 5000 cd/m2 as only the polymeric host was used, or decreased to 7000 cd/m2 as only the molecular host was used. The markedly improved device performance achieved in the devices with blended hosts may be attributed to the employed polymeric host that contributed a good film-forming character, and the molecular host that contributed a good electroluminescence character.

Broadband light-emitting diode

DOEpatents

Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

1998-01-01

A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

Broadband light-emitting diode

DOEpatents

Fritz, I.J.; Klem, J.F.; Hafich, M.J.

1998-07-14

A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

White polymer light-emitting diodes based on star-shaped polymers with an orange dendritic phosphorescent core.

PubMed

Zhu, Minrong; Li, Yanhu; Cao, Xiaosong; Jiang, Bei; Wu, Hongbin; Qin, Jingui; Cao, Yong; Yang, Chuluo

2014-12-01

A series of new star-shaped polymers with a triphenylamine-based iridium(III) dendritic complex as the orange-emitting core and poly(9,9-dihexylfluorene) (PFH) chains as the blue-emitting arms is developed towards white polymer light-emitting diodes (WPLEDs). By fine-tuning the content of the orange phosphor, partial energy transfer and charge trapping from the blue backbone to the orange core is realized to achieve white light emission. Single-layer WPLEDs with the configuration of ITO (indium-tin oxide)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/polymer/CsF/Al exhibit a maximum current efficiency of 1.69 cd A(-1) and CIE coordinates of (0.35, 0.33), which is very close to the pure white-light point of (0.33, 0.33). To the best of our knowledge, this is the first report on star-shaped white-emitting single polymers that simultaneously consist of fluorescent and phosphorescent species. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photosynthetically supplemental lighting for vegetable crop production with super-bright laser diode

NASA Astrophysics Data System (ADS)

Hu, Yongguang; Li, Pingping; Shi, Jintong

2007-02-01

Although many artificial light sources like high-pressure sodium lamp, metal halide lamp, fluorescent lamp and so on are commonly used in horticulture, they are not widely applied because of the disadvantages of unreasonable spectra, high cost and complex control. Recently new light sources of light-emitting diode (LED) and laser diode (LD) are becoming more and more popular in the field of display and illumination with the improvement of material and manufacturing, long life-span and increasingly low cost. A new type of super-bright red LD (BL650, central wavelength is 650 nm) was selected to make up of the supplemental lighting panel, on which LDs were distributed with regular hexagon array. Drive circuit was designed to power it and adjust light intensity. System performance including temperature rise and light intensity distribution under different vertical/horizontal distances were tested. Photosynthesis of sweet pepper and eggplant leaf under LD was measured with LI-6400 to show the supplemental lighting effects. The results show that LD system can supply the maximum light intensity of 180 μmol/m2 •s at the distance of 50 mm below the panel and the temperature rise is little within 1 °C. Net photosynthetic rate became faster when LD system increased light intensity. Compared with sunlight and LED supplemental lighting system, LD's promotion on photosynthesis is in the middle. Thus it is feasible for LD light source to supplement light for vegetable crops. Further study would focus on the integration of LD and other artificial light sources.

An efficient continuous-wave 591 nm light source based on sum-frequency mixing of a diode pumped Nd:GdVO4-Nd:CNGG laser

NASA Astrophysics Data System (ADS)

Zhao, Y. D.; Liu, J. H.

2013-08-01

We report a laser architecture to obtain continuous-wave (CW) yellow-orange light sources at the 591 nm wavelength. An 808 nm diode pumped a Nd:GdVO4 crystal emitting at 1063 nm. A part of the pump power was then absorbed by the Nd:CNGG crystal. The remaining pump power was used to pump a Nd:CNGG crystal emitting at 1329 nm. Intracavity sum-frequency mixing at 1063 and 1329 nm was then realized in a LiB3O5 (LBO) crystal to reach the yellow-orange radiation. We obtained a CW output power of 494 mW at 591 nm with a pump laser diode emitting 17.8 W at 808 nm.

Enhanced electron injection into inverted polymer light-emitting diodes by combined solution-processed zinc oxide/polyethylenimine interlayers.

PubMed

Höfle, Stefan; Schienle, Alexander; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-05-01

Inverted device architectures for organic light-emitting diodes (OLEDs) require suitable interfaces or buffer layers to enhance electron injection from highwork-function transparent electrodes. A solution-processable combination of ZnO and PEI is reported, that facilitates electron injection and enables efficient and air-stable inverted devices. Replacing the metal anode by highly conductive polymers enables transparent OLEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution-processed multilayer polymer light-emitting diode without intermixing

NASA Astrophysics Data System (ADS)

Kasparek, C.; Blom, P. W. M.

2017-01-01

The intermixing of two emissive layers in a four-layer solution-processed polymeric light-emitting diode with a hole injection, two emissive layers, and one hole-blocking layer is investigated. The relative emission of both emissive layers is measured and compared to a calculated recombination profile across the device using drift-diffusion simulations. A good agreement between the measured and calculated relative emission was found, supporting that there is no intermixing in the two emissive materials.

Ultraviolet Light Emitting Diode Use in Advanced Oxidation Processes

DTIC Science & Technology

2014-03-27

or medium pressure mercury lamps , but UV light emitting diodes ( LEDs ) have the capacity to be used for water disinfection also. Traditional mercury...based upon the phosphors that are selected and used to coat the inside of the glass tube from which these lamps are produced. A UV LED is...Research has demonstrated the ability to use UV LEDs in place of mercury lamps to achieve the same 7 disinfection capacity, and limited research has

Silicon Based Colloidal Quantum Dot and Nanotube Lasers

DTIC Science & Technology

2013-03-01

carrier density is theoretically and experimentally derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting...diodes and GaN single nanowire photonic crystal laser on silicon characterized by a lasing transition at λ=371.3 nm with a linewidth of 0.55 nm. The...derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting diodes and GaN single nanowire photonic crystal

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auf der Maur, M., E-mail: auf.der.maur@ing.uniroma2.it; Di Carlo, A.; Galler, B.

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.

Meeting Future C3I (Command-Control-Communications-Intelligence) Needs with Fiber Optics,

DTIC Science & Technology

1985-05-01

Frequency dependence of the sensitivity of fibers with hard coatings is relatively small. Nylon gives the weakest dependence, while the soft UV -cured...elastomer gives the strongest. Maximum sensitivity is obtained with Teflon TFE, while the minimum is achieved with the soft UV coating. With the latter...fiber-optics systems: the LED (Light Emitting Diode) and ILD (Injection Laser Diode). These devices emit light when an electric current is applied. The

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

2014-07-21

We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward andmore » seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.« less

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

NASA Astrophysics Data System (ADS)

Goßler, Christian; Bierbrauer, Colin; Moser, Rüdiger; Kunzer, Michael; Holc, Katarzyna; Pletschen, Wilfried; Köhler, Klaus; Wagner, Joachim; Schwaerzle, Michael; Ruther, Patrick; Paul, Oliver; Neef, Jakob; Keppeler, Daniel; Hoch, Gerhard; Moser, Tobias; Schwarz, Ulrich T.

2014-05-01

Currently available cochlear implants are based on electrical stimulation of the spiral ganglion neurons. Optical stimulation with arrays of micro-sized light-emitting diodes (µLEDs) promises to increase the number of distinguishable frequencies. Here, the development of a flexible GaN-based micro-LED array as an optical cochlear implant is reported for application in a mouse model. The fabrication of 15 µm thin and highly flexible devices is enabled by a laser-based layer transfer process of the GaN-LEDs from sapphire to a polyimide-on-silicon carrier wafer. The fabricated 50 × 50 µm2 LEDs are contacted via conducting paths on both p- and n-sides of the LEDs. Up to three separate channels could be addressed. The probes, composed of a linear array of the said µLEDs bonded to the flexible polyimide substrate, are peeled off the carrier wafer and attached to flexible printed circuit boards. Probes with four µLEDs and a width of 230 µm are successfully implanted in the mouse cochlea both in vitro and in vivo. The LEDs emit 60 µW at 1 mA after peel-off, corresponding to a radiant emittance of 6 mW mm-2.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

PubMed Central

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-01-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

A ten-element array of individually addressable channeled-substrate-planar AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Carlin, D. B.; Goldstein, B.; Bednarz, J. P.; Harvey, M. G.; Dinkel, N. A.

1987-01-01

The fabrication of arrays of channeled-substrate-planar (CSP) AlGaAs diode lasers which emit up to 150 mW CW in a single spatial mode and are applicable to mulitchannel optical recording systems is described. The CSP diode lasers are incorporated in ten-array geometry, and each array is 1.95 nm in width and 100 microns in thickness and is cleaved to have a cavity length of 200 microns and coated to produce 90-percent reflectivity on the back facet and 10-percent reflectivity on the front facet. The array is attached to a thermoelectrically cooled submount. The optical output power versus input current characteristics for the array are evaluated, and the lateral far-field intensity profiles for each of the lasers (at 30 mW CW) and CW spectra of the lasers are analyzed.

Strategy to overcome recombination limited photocurrent generation in CsPbX3 nanocrystal arrays

NASA Astrophysics Data System (ADS)

Mir, Wasim J.; Livache, Clément; Goubet, Nicolas; Martinez, Bertille; Jagtap, Amardeep; Chu, Audrey; Coutard, Nathan; Cruguel, Hervé; Barisien, Thierry; Ithurria, Sandrine; Nag, Angshuman; Dubertret, Benoit; Ouerghi, Abdelkarim; Silly, Mathieu G.; Lhuillier, Emmanuel

2018-03-01

We discuss the transport properties of CsPbBrxI3-x perovskite nanocrystal arrays as a model ensemble system of caesium lead halide-based perovskite nanocrystal arrays. While this material is very promising for the design of light emitting diodes, laser, and solar cells, very little work has been devoted to the basic understanding of their (photo)conductive properties in an ensemble system. By combining DC and time-resolved photocurrent measurements, we demonstrate fast photodetection with time response below 2 ns. The photocurrent generation in perovskite nanocrystal-based arrays is limited by fast bimolecular recombination of the material, which limits the lifetime of the photogenerated electron-hole pairs. We propose to use nanotrench electrodes as a strategy to ensure that the device size fits within the obtained diffusion length of the material in order to boost the transport efficiency and thus observe an enhancement of the photoresponse by a factor of 1000.

Adjunctive 830 nm light-emitting diode therapy can improve the results following aesthetic procedures.

PubMed

Calderhead, R Glen; Kim, Won-Serk; Ohshiro, Toshio; Trelles, Mario A; Vasily, David B

2015-12-30

Aggressive, or even minimally aggressive, aesthetic interventions are almost inevitably followed by such events as discomfort, erythema, edema and hematoma formation which could lengthen patient downtime and represent a major problem to the surgeon. Recently, low level light therapy with light-emitting diodes (LED-LLLT) at 830 nm has attracted attention in wound healing indications for its anti-inflammatory effects and control of erythema, edema and bruising. The wavelength of 830 nm offers deep penetration into living biological tissue, including bone. A new-generation of 830 nm LEDs, based on those developed in the NASA Space Medicine Laboratory, has enabled the construction of planar array-based LED-LLLT systems with clinically useful irradiances. Irradiation with 830 nm energy has been shown in vitro and in vivo to increase the action potential of epidermal and dermal cells significantly. The response of the inflammatory stage cells is enhanced both in terms of function and trophic factor release, and fibroblasts demonstrate superior collagenesis and elastinogenesis. A growing body of clinical evidence is showing that applying 830 nm LED-LLLT as soon as possible post-procedure, both invasive and noninvasive, successfully hastens the resolution of sequelae associated with patient downtime in addition to significantly speeding up frank wound healing. This article reviews that evidence, and attempts to show that 830 nm LED-LLLT delivers swift resolution of postoperative sequelae, minimizes downtime and enhances patient satisfaction.

Dual light-emitting diode-based multichannel microscopy for whole-slide multiplane, multispectral and phase imaging.

PubMed

Liao, Jun; Wang, Zhe; Zhang, Zibang; Bian, Zichao; Guo, Kaikai; Nambiar, Aparna; Jiang, Yutong; Jiang, Shaowei; Zhong, Jingang; Choma, Michael; Zheng, Guoan

2018-02-01

We report the development of a multichannel microscopy for whole-slide multiplane, multispectral and phase imaging. We use trinocular heads to split the beam path into 6 independent channels and employ a camera array for parallel data acquisition, achieving a maximum data throughput of approximately 1 gigapixel per second. To perform single-frame rapid autofocusing, we place 2 near-infrared light-emitting diodes (LEDs) at the back focal plane of the condenser lens to illuminate the sample from 2 different incident angles. A hot mirror is used to direct the near-infrared light to an autofocusing camera. For multiplane whole-slide imaging (WSI), we acquire 6 different focal planes of a thick specimen simultaneously. For multispectral WSI, we relay the 6 independent image planes to the same focal position and simultaneously acquire information at 6 spectral bands. For whole-slide phase imaging, we acquire images at 3 focal positions simultaneously and use the transport-of-intensity equation to recover the phase information. We also provide an open-source design to further increase the number of channels from 6 to 15. The reported platform provides a simple solution for multiplexed fluorescence imaging and multimodal WSI. Acquiring an instant focal stack without z-scanning may also enable fast 3-dimensional dynamic tracking of various biological samples. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Lee, Tae Ho; Kim, Tae Geun

2017-07-19

A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces. We apply these H-TCEs to three near-UV light-emitting diodes (LEDs) (385 nm LEDs with p-GaN and p-AlGaN terminated surfaces and 365 nm LED with p-AlGaN terminated surface). We confirm that the light power outputs increase by 66%, 79%, and 103%, whereas the forward voltages reduce by 5.6%, 10.2%, and 8.6% for 385 nm p-GaN terminated, 385 nm p-AlGaN terminated, and 365 nm p-AlGaN terminated LEDs with H-TCEs, respectively, compared to LEDs with reference ITOs.

Plasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes

NASA Astrophysics Data System (ADS)

Leung, Yu Hang; Ng, Alan M. C.; Djurišic, Aleksandra B.; Chan, Wai Kin; Fong, Patrick W. K.; Lui, Hsien Fai; Surya, Charles

2014-03-01

Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.

A route to improved extraction efficiency of light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhu, H.; Shan, C. X.; Wang, L. K.; Yang, Y.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.

2010-01-01

The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A.; Shamirzaev, T. S.

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensitymore » but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.« less

Comparative and quantitative analysis of white light-emitting diodes and other lamps used for home illumination

NASA Astrophysics Data System (ADS)

Rubinger, Rero Marques; da Silva, Edna Raimunda; Pinto, Daniel Zaroni; Rubinger, Carla Patrícia Lacerda; Oliveira, Adhimar Flávio; da Costa Bortoni, Edson

2015-01-01

We compared the photometric and radiometric quantities in the visible, ultraviolet, and infrared spectra of white light-emitting diodes (LEDs), incandescent light bulbs and a compact fluorescent lamp used for home illumination. The color-rendering index and efficiency-related quantities were also used as auxiliary tools in this comparison. LEDs have a better performance in all aspects except for the color-rendering index, which is better with an incandescent light bulb. Compact fluorescent lamps presented results that, to our knowledge, do not justify their substitution for the incandescent light bulb. The main contribution of this work is an approach based on fundamental quantities to evaluate LEDs and other light sources.

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

NASA Astrophysics Data System (ADS)

Stark, Christoph J. M.; Detchprohm, Theeradetch; Zhao, Liang; Paskova, Tanya; Preble, Edward A.; Wetzel, Christian

2012-12-01

Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06° to 2.24°), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electrical device performance. We find conditions leading to a large increase in light-output power over the virtually on-axis device and over planar sapphire references. The process is found suitable to enhance light extraction even without post-growth processing.

LED-based UV source for monitoring spectroradiometer properties

NASA Astrophysics Data System (ADS)

Sildoja, Meelis-Mait; Nevas, Saulius; Kouremeti, Natalia; Gröbner, Julian; Pape, Sven; Pendsa, Stefan; Sperfeld, Peter; Kemus, Fabian

2018-06-01

A compact and stable UV monitoring source based on state-of-the-art commercially available ultraviolet light emitting diodes (UV-LEDs) has been developed. It is designed to trace the radiometric stability—both responsivity and wavelength scale—of array spectroradiometers measuring direct solar irradiance in the wavelength range between 300 nm and 400 nm. The spectral irradiance stability of the UV-LED-based light source observed in the laboratory after seasoning (burning-in) the individual LEDs was better than 0.3% over a 12 h period of continuous operation. The integral irradiance measurements of the source over a period of several months, where the UV-LED source was not operated continuously between the measurements, showed stability within 0.3%. In-field measurements of the source with an array spectroradiometer indicated the stability of the source to be within the standard uncertainty of the spectroradiometer calibration, which was within 1% to 2%.

An entangled-light-emitting diode.

PubMed

Salter, C L; Stevenson, R M; Farrer, I; Nicoll, C A; Ritchie, D A; Shields, A J

2010-06-03

An optical quantum computer, powerful enough to solve problems so far intractable using conventional digital logic, requires a large number of entangled photons. At present, entangled-light sources are optically driven with lasers, which are impractical for quantum computing owing to the bulk and complexity of the optics required for large-scale applications. Parametric down-conversion is the most widely used source of entangled light, and has been used to implement non-destructive quantum logic gates. However, these sources are Poissonian and probabilistically emit zero or multiple entangled photon pairs in most cycles, fundamentally limiting the success probability of quantum computational operations. These complications can be overcome by using an electrically driven on-demand source of entangled photon pairs, but so far such a source has not been produced. Here we report the realization of an electrically driven source of entangled photon pairs, consisting of a quantum dot embedded in a semiconductor light-emitting diode (LED) structure. We show that the device emits entangled photon pairs under d.c. and a.c. injection, the latter achieving an entanglement fidelity of up to 0.82. Entangled light with such high fidelity is sufficient for application in quantum relays, in core components of quantum computing such as teleportation, and in entanglement swapping. The a.c. operation of the entangled-light-emitting diode (ELED) indicates its potential function as an on-demand source without the need for a complicated laser driving system; consequently, the ELED is at present the best source on which to base future scalable quantum information applications.

Warm-White-Light-Emitting Diode Based on a Dye-Loaded Metal-Organic Framework for Fast White-Light Communication.

PubMed

Wang, Zhiye; Wang, Zi; Lin, Bangjiang; Hu, XueFu; Wei, YunFeng; Zhang, Cankun; An, Bing; Wang, Cheng; Lin, Wenbin

2017-10-11

A dye@metal-organic framework (MOF) hybrid was used as a fluorophore in a white-light-emitting diode (WLED) for fast visible-light communication (VLC). The white light was generated from a combination of blue emission of the 9,10-dibenzoate anthracene (DBA) linkers and yellow emission of the encapsulated Rhodamine B molecules. The MOF structure not only prevents dye molecules from aggregation-induced quenching but also efficiently transfers energy to the dye for dual emission. This light-emitting material shows emission lifetimes of 1.8 and 5.3 ns for the blue and yellow components, respectively, which are significantly shorter than the 200 ns lifetime of Y 3 Al 5 O 12 :Ce 3+ in commercial WLEDs. The MOF-WLED device exhibited a modulating frequency of 3.6 MHz for VLC, six times that of commercial WLEDs.

Investigation of organic light emitting diodes for interferometric purposes

NASA Astrophysics Data System (ADS)

Pakula, Anna; Zimak, Marzena; Sałbut, Leszek

2011-05-01

Recently the new type of light source has been introduced to the market. Organic light emitting diode (OLED) is not only interesting because of the low applying voltage, wide light emitting areas and emission efficiency. It gives the possibility to create a light source of a various shape, various color and in the near future very likely even the one that will change shape and spectrum in time in controlled way. Those opportunities have not been in our reach until now. In the paper authors try to give an answer to the question if the new light source -OLED - is suitable for interferometric purposes. Tests cover the short and long term spectrum stability, spectrum changes due to the emission area selection. In the paper the results of two OLEDs (red and white) are shown together with the result of an attempt to use them in an interferometric setup.

Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

PubMed

Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

2014-01-27

Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. < 2.4 V for onset and < 3 V for 1000 cd/m2, and high efficiency of 32.5 lm/W (13.3%), 58.8 lm/W (14.3%), 55.1 lm/W (14.6%), 24.9 lm/W (13.7%) and 45.1 lm/W (13.5%) for blue, green, yellow, red and white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

Characteristics of blue organic light emitting diodes with different thick emitting layers

NASA Astrophysics Data System (ADS)

Li, Chong; Tsuboi, Taiju; Huang, Wei

2014-08-01

We fabricated blue organic light emitting diodes (called blue OLEDs) with emitting layer (EML) of diphenylanthracene derivative 9,10-di(2-naphthyl)anthracene (ADN) doped with blue-emitting DSA-ph (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene) to investigate how the thickness of EML and hole injection layer (HIL) influences the electroluminescence characteristics. The driving voltage was observed to increase with increasing EML thickness from 15 nm to 70 nm. The maximum external quantum efficiency of 6.2% and the maximum current efficiency of 14 cd/A were obtained from the OLED with 35 nm thick EML and 75 nm thick HIL. High luminance of 120,000 cd/m2 was obtained at 7.5 V from OLED with 15 nm thick EML.

Developing a new supplemental lighting device with ultra-bright white LED for vegetables

NASA Astrophysics Data System (ADS)

Hu, Yongguang; Li, Pingping; Jiang, Jianghai

2007-02-01

It has been proved that monochromatic or compound light-emitting diode (LED) or laser diode (LD) can promote the photosynthesis of horticultural crops, but the promotion of polychromatic light like white LED is unclear. A new type of ultra-bright white LED (LUW56843, InGaN, \

Vertical-cavity surface-emitting laser sources for gigahertz-bandwidth, multiwavelength frequency-domain photon migration

NASA Astrophysics Data System (ADS)

O'Sullivan, Thomas D.; No, Keunsik; Matlock, Alex; Warren, Robert V.; Hill, Brian; Cerussi, Albert E.; Tromberg, Bruce J.

2017-10-01

Frequency-domain photon migration (FDPM) uses modulated laser light to measure the bulk optical properties of turbid media and is increasingly applied for noninvasive functional medical imaging in the near-infrared. Although semiconductor edge-emitting laser diodes have been traditionally used as miniature light sources for this application, we show that vertical-cavity surface-emitting lasers (VCSELs) exhibit output power and modulation performance characteristics suitable for FDPM measurements of tissue optical properties at modulation frequencies exceeding 1 GHz. We also show that an array of multiple VCSEL devices can be coherently modulated at frequencies suitable for FDPM and can improve optical power. In addition, their small size and simple packaging make them an attractive choice as components in wearable sensors and clinical FDPM-based optical spectroscopy systems. We demonstrate the benefits of VCSEL technology by fabricating and testing a unique, compact VCSEL-based optical probe with an integrated avalanche photodiode. We demonstrate sensitivity of the VCSEL-based probe to subcutaneous tissue hemodynamics that was induced during an arterial cuff occlusion of the upper arm in a human subject.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Quantitative description of charge-carrier transport in a white organic light-emitting diode

NASA Astrophysics Data System (ADS)

Schober, M.; Anderson, M.; Thomschke, M.; Widmer, J.; Furno, M.; Scholz, R.; Lüssem, B.; Leo, K.

2011-10-01

We present a simulation model for the analysis of charge-carrier transport in organic thin-film devices, and apply it to a three-color white hybrid organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emission. We simulate a series of single-carrier devices, which reconstruct the OLED layer sequence step by step. Thereby, we determine the energy profiles for hole and electron transport, show how to discern bulk from interface limitation, and identify trap states.

Time-of-flight Measurement Of Hole-tunneling Properties And Emission Color Control In Organic Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Kurata, K.; Kashiwabara, K.; Nakajima, K.; Mizoguchi, Y.; Ohtani, N.

2011-12-01

Hole transport properties of organic light-emitting diodes (OLEDs) with a thin hole-blocking layer (HBL) were evaluated by time-of-flight measurement. Electroluminescence (EL) spectra of OLEDs with various HBL thicknesses were also evaluated. The results clearly show that the time-resolved photocurrent response and the emission color strongly depend on HBL thickness. This can be attributed to hole-tunneling through the thin HBL. We successfully fabricated a white OLED by controlling the thickness of HBL.

Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode

NASA Astrophysics Data System (ADS)

Kong, Duanhua; Kim, Taek; Kim, Sihan; Hong, Hyungi; Shcherbatko, Igor; Park, Youngsoo; Shin, Dongjae; Ha, Kyoung-Ho; Jeong, Gitae

2014-03-01

We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.

Program For A Pushbutton Display

NASA Technical Reports Server (NTRS)

Busquets, Anthony M.; Luck, William S., Jr.

1989-01-01

Programmable Display Pushbutton (PDP) is pushbutton device available from Micro Switch having programmable 16X35 matrix of light-emitting diodes on pushbutton surface. Any desired legends display on PDP's, producing user-friendly applications reducing need for dedicated manual controls. Interacts with operator, calls for correct response before transmitting next message. Both simple manual control and sophisticated programmable link between operator and host system. Programmable Display Pushbutton Legend Editor (PDPE) computer program used to create light-emitting-diode (LED) displays for pushbuttons. Written in FORTRAN.

Nanobeam Photonic Crystal Cavity Light-Emitting Diodes

DTIC Science & Technology

2011-01-01

Nanobeam photonic crystal cavity light-emitting diodes Gary Shambat,1,a) Bryan Ellis,1 Jan Petykiewicz,1 Marie A. Mayer,2 Tomas Sarmiento ,1 James...J. H. Ryou, P. B. Deotare, R. Dupuis, and M. Loncar, Appl. Phys. Lett. 97, 051104 (2010). 5Y. Gong, B. Ellis, G. Shambat, T. Sarmiento , J. S. Harris...F. Karouta, S. He, and R. W. van der Heijden, Appl. Phys. Lett. 97, 151105 (2010). 9B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento , J. Harris, E. E

Efficient Flexible Organic/Inorganic Hybrid Perovskite Light-Emitting Diodes Based on Graphene Anode.

PubMed

Seo, Hong-Kyu; Kim, Hobeom; Lee, Jaeho; Park, Min-Ho; Jeong, Su-Hun; Kim, Young-Hoon; Kwon, Sung-Joo; Han, Tae-Hee; Yoo, Seunghyup; Lee, Tae-Woo

2017-03-01

Highly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-emitting diode

NASA Astrophysics Data System (ADS)

Gupta, Rohini Bhardwaj; Nagpal, Swati; Arora, Swati; Bhatnagar, Pramod Kumar; Mathur, Parmatma Chandra

2011-01-01

Ultraviolet (UV) light-emitting diode using salmon deoxyribonucleic acid (sDNA)-cetyltrimethylammonium complex as an electron blocking layer and zinc oxide (ZnO) nanorods as emissive material was fabricated. UV emission, which was blue shifted up to 335 nm with respect to the band edge emission of 390 nm, was observed. This blue shift was caused due to accumulation of electrons in the conduction band of ZnO because of a high potential barrier existing at the sDNA/ZnO interface.

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaojun; Ma, Jun; Huang, Tongde

2014-03-03

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

NASA Astrophysics Data System (ADS)

Lin, Yu-Sheng; Yeh, J. Andrew

2011-09-01

High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.

Optimization of freeform lightpipes for light-emitting-diode projectors.

PubMed

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

Optimization of freeform lightpipes for light-emitting-diode projectors

NASA Astrophysics Data System (ADS)

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

Spectral quality may be used to alter plant disease development in CELSS

NASA Astrophysics Data System (ADS)

Schuerger, A. C.; Brown, C. S.

1994-11-01

Plants were grown under light emitting diode (LED) arrays with different spectral qualities to determine the effects of light on the development of tomato mosaic virus (ToMV) in peppers and powdery mildew on cucumbers. One LED array supplied 100% of the photosynthetic photon flux (PPF) at 660 nm, a second array supplied 90% of the PPF at 660 nm and 10% at 735 nm, and a third array supplied 98% of the PPF at 660 nm with 2% in the blue region (380-500 nm) supplied by blue fluorescent lamps. Control plants were grown under metal halide (MH) lamps. Pepper plants inoculated with ToMV and grown under 660 and 660/735 LED arrays showed marked increases in both the rate and the severity of symptoms as compared to inoculated plants grown under the MH lamp or 660/blue array. Pepper plants grown under the 660/blue array did not develop symptoms as rapidly as inoculated plants grown under the 660 or 660/735 arrays, but they did develop symptoms faster than inoculated plants grown under the MH lamp. The numbers of colonies of powdery mildew per leaf and the size of each colony were greatest on inoculated cucumber plants grown under the MH lamp.

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Li, Heng; Zhang, Zhe-Han; Chen, Hsiang; Wang, Shing-Chung; Lu, Tien-Chang

2017-01-01

We report on the design of the geometry and chip size-controlled structures of microscale light-emitting diodes (micro-LEDs) with a shallow-etched oxide-refilled current aperture and their performance. The proposed structure, which combines an indium-tin-oxide layer and an oxide-confined aperture, exhibited not only uniform current distribution but also remarkably tight current confinement. An extremely high injection level of more than 90 kA/cm2 was achieved in the micro-LED with a 5-μm aperture. Current spreading and the droop mechanism in the investigated devices were characterized through electroluminescence measurements, optical microscopy, and beam-view imaging. Furthermore, we utilized the β-model and S-model to elucidate current crowding and the efficiency droop phenomenon in the investigated micro-LEDs. The luminescence results evidenced the highly favorable performance of the fabricated micro-LEDs, which is a result of their more uniform current spreading and lower junction temperature relative to conventional LEDs. Moreover, the maximum endured current density could be further increased by reducing the aperture size of the micro-LEDs. The proposed design, which is expected to be beneficial for the development of high-performance array-based micro-LEDs, is practicable through current state-of-the-art processing techniques.

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

NASA Astrophysics Data System (ADS)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

NASA Astrophysics Data System (ADS)

Qian, L.; Xu, Z.; Teng, F.; Duan, X.-X.; Jin, Z.-S.; Du, Z.-L.; Li, F.-S.; Zheng, M.-J.; Wang, Y.-S.

2007-06-01

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)- p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

Combination of carbon dot and polymer dot phosphors for white light-emitting diodes.

PubMed

Sun, Chun; Zhang, Yu; Sun, Kai; Reckmeier, Claas; Zhang, Tieqiang; Zhang, XiaoYu; Zhao, Jun; Wu, Changfeng; Yu, William W; Rogach, Andrey L

2015-07-28

We realized white light-emitting diodes with high color rendering index (85-96) and widely variable color temperatures (2805-7786 K) by combining three phosphors based on carbon dots and polymer dots, whose solid-state photoluminescence self-quenching was efficiently suppressed within a polyvinyl pyrrolidone matrix. All three phosphors exhibited dominant absorption in the UV spectral region, which ensured the weak reabsorption and no energy transfer crosstalk. The WLEDs showed excellent color stability against the increasing current because of the similar response of the tricolor phosphors to the UV light variation.

Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Min, Guoquan; Song, Zhitang; Zhang, Jing; Liu, Yanbo; Zhang, Jianping

2010-05-01

This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

NASA Astrophysics Data System (ADS)

Sadat Mohajerani, Matin; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

2016-05-01

Three-dimensional (3D) InGaN/GaN quantum-well (QW) core-shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core-shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).

Fabrication and characterization of a germanium nanowire light emitting diode

NASA Astrophysics Data System (ADS)

Greil, Johannes; Bertagnolli, Emmerich; Salem, Bassem; Baron, Thierry; Gentile, Pascal; Lugstein, Alois

2017-12-01

In this letter, we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.

Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone

NASA Astrophysics Data System (ADS)

Liu, Shengqiang; Wu, Ruofan; Huang, Jiang; Yu, Junsheng

2013-09-01

A voltage-controlled color-tunable and high-efficiency organic light-emitting diode (OLED) by inserting 16-nm N,N'-dicarbazolyl-3,5-benzene (mCP) interlayer between two complementary emitting layers (EMLs) was fabricated. The OLED emitted multicolor ranging from blue (77.4 cd/A @ 6 V), white (70.4 cd/A @ 7 V), to yellow (33.7 cd/A @ 9 V) with voltage variation. An equivalent model was proposed to reveal the color-tunable and high-efficiency emission of OLEDs, resulting from the swing of exciton bilateral migration zone near mCP/blue-EML interface. Also, the model was verified with a theoretical arithmetic using single-EML OLEDs to disclose the crucial role of mCP exciton adjusting layer.

Suspended light-emitting diode featuring a bottom dielectric distributed Bragg reflector

NASA Astrophysics Data System (ADS)

Cai, Wei; Wang, Wei; Zhu, Bingcheng; Gao, Xumin; Zhu, Guixia; Yuan, Jialei; Wang, Yongjin

2018-01-01

Here, we propose, fabricate and characterize the light manipulation of a suspended-membrane InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED) with a dielectric distributed Bragg reflector (DBR) positioned at the bottom, implemented on a GaN-on-silicon platform. Silicon removal is conducted to obtain the suspended MQW-LED architecture, and back wafer thinning of the epitaxial film is performed to improve the device performance. A 6-pair SiO2/Ta2O5 DBR is deposited on the backside to manipulate the emitted light. The experimental results demonstrate that the bottom dielectric DBR exhibits high reflectivity and distinctly changes the light emission, which are consistent with the performed simulation results. This work represents a significant step towards the realization of inexpensive, electrically driven and simply fabricated GaN VCSELs for potential use in number of applications.

Stolephorus sp Behavior in Different LED (Light Emitting Diode) Color and Light Intensities

NASA Astrophysics Data System (ADS)

Fitri Aristi, D. P.; Ramadanita, I. A.; Hapsari, T. D.; Susanto, A.

2018-02-01

This research aims to observe anchovy (Stolephorus sp) behavior under different LED light intensities that affect eye physiology (cell cone structure). The materials used were Stolephorus sp taken from the waters off Jepara and 13 and 10 watt light emitting diode (LED). The research method was an experiment conducted from March through August 2015 in the waters off Jepara. Data analysis of visual histology and fish respond was carried out at the fishing gear material laboratory, anatomy and cultivate. Cone cell structure (mosaic cone) of Stolephorus sp forms a connected regular square pattern with every single cone surrounded by four double cones, which indicate that anchovies are sensitive to light. The 13 watt LED (628 lux) has faster response than the 10 watt LED (531 lux) as it has wider and higher emitting intensity, which also attracts fish to gather quicker.

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

DOEpatents

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

PubMed

Lee, Byeong Ryong; Kim, Tae Geun

2017-01-01

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Light source comprising a common substrate, a first led device and a second led device

DOEpatents

Choong, Vi-En

2010-02-23

At least one stacked organic or polymeric light emitting diode (PLEDs) devices to comprise a light source is disclosed. At least one of the PLEDs includes a patterned cathode which has regions which transmit light. The patterned cathodes enable light emission from the PLEDs to combine together. The light source may be top or bottom emitting or both.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

PubMed

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

2017-07-24

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

High-performance light-emitting diodes based on carbene-metal-amides

NASA Astrophysics Data System (ADS)

Di, Dawei; Romanov, Alexander S.; Yang, Le; Richter, Johannes M.; Rivett, Jasmine P. H.; Jones, Saul; Thomas, Tudor H.; Abdi Jalebi, Mojtaba; Friend, Richard H.; Linnolahti, Mikko; Bochmann, Manfred; Credgington, Dan

2017-04-01

Organic light-emitting diodes (OLEDs) promise highly efficient lighting and display technologies. We introduce a new class of linear donor-bridge-acceptor light-emitting molecules, which enable solution-processed OLEDs with near-100% internal quantum efficiency at high brightness. Key to this performance is their rapid and efficient utilization of triplet states. Using time-resolved spectroscopy, we establish that luminescence via triplets occurs within 350 nanoseconds at ambient temperature, after reverse intersystem crossing to singlets. We find that molecular geometries exist at which the singlet-triplet energy gap (exchange energy) is close to zero, so that rapid interconversion is possible. Calculations indicate that exchange energy is tuned by relative rotation of the donor and acceptor moieties about the bridge. Unlike other systems with low exchange energy, substantial oscillator strength is sustained at the singlet-triplet degeneracy point.

Illumination-parameter adjustable and illumination-distribution visible LED helmet for low-level light therapy on brain injury

NASA Astrophysics Data System (ADS)

Wang, Pengbo; Gao, Yuan; Chen, Xiao; Li, Ting

2016-03-01

Low-level light therapy (LLLT) has been clinically applied. Recently, more and more cases are reported with positive therapeutic effect by using transcranial light emitting diodes (LEDs) illumination. Here, we developed a LLLT helmet for treating brain injuries based on LED arrays. We designed the LED arrays in circle shape and assembled them in multilayered 3D printed helmet with water-cooling module. The LED arrays can be adjust to touch the head of subjects. A control circuit was developed to drive and control the illumination of the LLLT helmet. The software portion provides the control of on and off of each LED arrays, the setup of illumination parameters, and 3D distribution of LLLT light dose in human subject according to the illumination setups. This LLLT light dose distribution was computed by a Monte Carlo model for voxelized media and the Visible Chinese Human head dataset and displayed in 3D view at the background of head anatomical structure. The performance of the whole system was fully tested. One stroke patient was recruited in the preliminary LLLT experiment and the following neuropsychological testing showed obvious improvement in memory and executive functioning. This clinical case suggested the potential of this Illumination-parameter adjustable and illuminationdistribution visible LED helmet as a reliable, noninvasive, and effective tool in treating brain injuries.

Origin of Negative Capacitance in Bipolar Organic Diodes

NASA Astrophysics Data System (ADS)

Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

2018-03-01

Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Deep ultraviolet light-emitting and laser diodes

NASA Astrophysics Data System (ADS)

Khan, Asif; Asif, Fatima; Muhtadi, Sakib

2016-02-01

Nearly all the air-water purification/polymer curing systems and bio-medical instruments require 250-300 nm wavelength ultraviolet light for which mercury lamps are primarily used. As a potential replacement for these hazardous mercury lamps, several global research teams are developing AlGaN based Deep Ultraviolet (DUV) light emitting diodes (LEDs) and DUV LED Lamps and Laser Diodes over Sapphire and AlN substrates. In this paper, we review the current research focus and the latest device results. In addition to the current results we also discuss a new quasipseudomorphic device design approach. This approach which is much easier to integrate in a commercial production setting was successfully used to demonstrate UVC devices on Sapphire substrates with performance levels equal to or better than the conventional relaxed device designs.

Formation of 2D bright spatial solitons in lithium niobate with photovoltaic response and incoherent background

NASA Astrophysics Data System (ADS)

Pustozerov, A.; Shandarov, V.

2017-12-01

The influence of incoherent background illumination produced by light-emitting diodes (LED's) of different average wavelengths and laser diode emitting in blue region of visible on diffraction characteristics of narrow coherent light beams of He-Ne laser due to refractive index changes of Fe-doped lithium niobate sample are studied. It has been experimentally demonstrated that nonlinear diffraction of red beams with wavelength 633 nm and diameters on full width of half maximum (FWHM) near to 15 μm may be totally compensated using background light with average wavelengths 450 - 465 nm. To provide the necessary intensity of incoherent background, the combinations of spherical and cylindrical concave lenses with blue LED and laser diode module without focusing its beam have been used.

The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chondroudis, Konstantinos; Mitzi, David B.

2000-01-01

The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

PubMed

Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

2016-06-28

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

PubMed

de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

2011-08-12

A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

Bluish-green color emitting Ba2Si3O8:Eu2+ ceramic phosphors for white light-emitting diodes.

PubMed

Xiao, F; Xue, Y N; Zhang, Q Y

2009-10-15

This paper reports on the structural and optical properties of Eu(2+) activated Ba(2)Si(3)O(8) ceramic phosphors synthesized by a sol-gel method. The ceramic phosphors have been characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and fluorescence measurements. The structural characterization results suggest that the as-prepared phosphors are of single phase monoclinic Ba(2)Si(3)O(8) with rod-like morphology. A broad excitation band ranging from 300 to 410 nm matches well with the ultraviolet (UV) radiation of light-emitting diodes (LEDs). Upon 380 nm UV light excitation, these phosphors emit bluish-green emission centered at 500 nm with color coordination (x=0.25, y=0.40). All the obtained results indicate that the Ba(2)Si(3)O(8):Eu(2+) ceramic phosphors are promising bluish-green candidates for the phosphor-converted white LEDs.

Full down-conversion of amber-emitting phosphor-converted light-emitting diodes with powder phosphors and a long-wave pass filter.

PubMed

Oh, Jeong Rok; Cho, Sang-Hwan; Park, Hoo Keun; Oh, Ji Hye; Lee, Yong-Hee; Do, Young Rag

2010-05-24

This paper reports the possibility of a facile optical structure to realize a highly efficient monochromatic amber-emitting light-emitting diode (LED) using a powder-based phosphor-converted LED combined with a long-wave pass filter (LWPF). The capping of a blue-reflecting and amber-passing LWPF enhances both the amber emission from the silicate amber phosphor layer and the color purity due to the blocking and recycling of the pumping blue light from the InGaN LED. The enhancement of the luminous efficacy of the amber pc-LED with a LWPF (phosphor concentration 20 wt%, 39.4 lm/W) is 34% over that of an amber pc-LED without a LWPF (phosphor concentration 55 wt%, 29.4 lm/W) at 100 mA and a high color purity (>96%) with Commission International d'Eclairage (CIE) color coordinates of x=0.57 and y=0.42.

Light emission from silicon: Some perspectives and applications

NASA Astrophysics Data System (ADS)

Fiory, A. T.; Ravindra, N. M.

2003-10-01

Research on efficient light emission from silicon devices is moving toward leading-edge advances in components for nano-optoelectronics and related areas. A silicon laser is being eagerly sought and may be at hand soon. A key advantage is in the use of silicon-based materials and processing, thereby using high yield and low-cost fabrication techniques. Anticipated applications include an optical emitter for integrated optical circuits, logic, memory, and interconnects; electro-optic isolators; massively parallel optical interconnects and cross connects for integrated circuit chips; lightwave components; high-power discrete and array emitters; and optoelectronic nanocell arrays for detecting biological and chemical agents. The new technical approaches resolve a basic issue with native interband electro-optical emission from bulk Si, which competes with nonradiative phonon- and defect-mediated pathways for electron-hole recombination. Some of the new ways to enhance optical emission efficiency in Si diode devices rely on carrier confinement, including defect and strain engineering in the bulk material. Others use Si nanocrystallites, nanowires, and alloying with Ge and crystal strain methods to achieve the carrier confinement required to boost radiative recombination efficiency. Another approach draws on the considerable progress that has been made in high-efficiency, solar-cell design and uses the reciprocity between photo- and light-emitting diodes. Important advances are also being made with silicon-oxide materials containing optically active rare-earth impurities.

Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

PubMed

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-03-01

Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

Optical programmable metamaterials

NASA Astrophysics Data System (ADS)

Gong, Cheng; Zhang, Nan; Dai, Zijie; Liu, Weiwei

2018-02-01

We suggest and demonstrate the concept of optical programmable metamaterials which can configure the device's electromagnetic parameters by the programmable optical stimuli. In such metamaterials, the optical stimuli produced by a FPGA controlled light emitting diode array can switch or combine the resonance modes which are coupled in. As an example, an optical programmable metamaterial terahertz absorber is proposed. Each cell of the absorber integrates four meta-rings (asymmetric 1/4 rings) with photo-resistors connecting the critical gaps. The principle and design of the metamaterials are illustrated and the simulation results demonstrate the functionalities for programming the metamaterial absorber to change its bandwidth and resonance frequency.

Characterisation of 3D-GaN/InGaN nanostructured Light Emitting Diodes by Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Griffiths, I. J.; Cherns, D.; Wang, X.; Waag, A.; Wehmann, H.-H.

2013-11-01

Transmission and scanning electron microscopy have been used to characterise GaN/InGaN 3D nanostructures grown on patterned GaN/sapphire substrates by MOVPE. It has been found that the growth of well ordered arrays of such nanostructures, containing multiple quantum wells on non-polar side-facets, can be achieved with a low density of defects. Growth changes and surface morphology play a major role in the nucleation of any defects present. The nanostructure morphology has been investigated and non-uniform growth on adjacent facets studied.

Efficient and mechanically robust stretchable organic light-emitting devices by a laser-programmable buckling process

PubMed Central

Yin, Da; Feng, Jing; Ma, Rui; Liu, Yue-Feng; Zhang, Yong-Lai; Zhang, Xu-Lin; Bi, Yan-Gang; Chen, Qi-Dai; Sun, Hong-Bo

2016-01-01

Stretchable organic light-emitting devices are becoming increasingly important in the fast-growing fields of wearable displays, biomedical devices and health-monitoring technology. Although highly stretchable devices have been demonstrated, their luminous efficiency and mechanical stability remain impractical for the purposes of real-life applications. This is due to significant challenges arising from the high strain-induced limitations on the structure design of the device, the materials used and the difficulty of controlling the stretch-release process. Here we have developed a laser-programmable buckling process to overcome these obstacles and realize a highly stretchable organic light-emitting diode with unprecedented efficiency and mechanical robustness. The strained device luminous efficiency −70 cd A−1 under 70% strain - is the largest to date and the device can accommodate 100% strain while exhibiting only small fluctuations in performance over 15,000 stretch-release cycles. This work paves the way towards fully stretchable organic light-emitting diodes that can be used in wearable electronic devices. PMID:27187936

Application of highly ordered carbon nanotubes templates to field-emission organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Li, Chi-Shing; Su, Shui-Hsiang; Chi, Hsiang-Yu; Yokoyama, Meiso

2009-01-01

An anodic aluminum oxide (AAO) template was formed by a two-step anodization process. Carbon nanotubes (CNTs) were successfully synthesized along with AAO pores and the diameters of CNTs equaled those of AAO pores. The lengths of CNTs during a chemical vapor deposition synthesized process on the AAO template were effectively controlled. These AAO-CNTs exhibit excellent field emission with a low turn-on field (0.7 V/μm) and a low threshold field (1.4 V/μm). The field enhancement factor, calculated from the non-saturated region of the Fowler-Nordheim (F-N) plot, is about 8237. A novel field-emission organic light-emitting diode (FEOLED) combining AAO-CNTs cathodes as electron source with organic electroluminescent (EL) light-emitting layers coated on indium-tin-oxide (ITO) is produced. The uniform and dense luminescence image is obtained in the FEOLEDs. Organic EL light-emitting materials have lower working voltage than inorganic phosphor-coated fluorescent screens.

Effect of SiO 2/Si 3N 4 dielectric distributed Bragg reflectors (DDBRs) for Alq 3/NPB thin-film resonant cavity organic light emitting diodes

NASA Astrophysics Data System (ADS)

Lei, Po-Hsun; Wang, Shun-Hsi; Juang, Fuh Shyang; Tseng, Yung-Hsin; Chung, Meng-Jung

2010-05-01

In this article, we report on the effect of SiO 2/Si 3N 4 dielectric distributed Bragg reflectors (DDBRs) for Alq 3/NPB thin-film resonant cavity organic light emitting diode (RCOLED) in increasing the light output intensity and reducing the linewidth of spontaneous emission spectrum. The optimum DDBR number is found as 3 pairs. The device performance will be bad by further increasing or decreasing the number of DDBR. As compared to the conventional Alq 3/NPB thin-film organic light emitting diode (OLED), the Alq 3/NPB thin-film RCOLED with 3-pair DDBRs has the superior electrical and optical characteristics including a forward voltage of 6 V, a current efficiency of 3.4 cd/A, a luminance of 2715 cd/m 2 under the injection current density of 1000 A/m 2, and a full width at half maximum (FWHM) of 12 nm for emission spectrum over the 5-9 V bias range. These results represent that the Alq 3/NPB thin-film OLED with DDBRs shows a potential as the light source for plastic optical fiber (POF) communication system.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

NASA Astrophysics Data System (ADS)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

77 FR 75189 - Certain Light-Emitting Diodes and Products Containing Same; Commission Determination Not To...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-19

... Corporate Center USA, Hella, Inc., Automotive Lighting Reutlingen GmbH, Automotive Lighting LLC, Tecnologia..., Inc., Automotive Lighting Reutlingen GmbH, Automotive Lighting, LLC, and [[Page 75190

Hybrid electroluminescent devices

DOEpatents

Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

2010-08-03

A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

Noise reduction in digital lensless holographic microscopy by engineering the light from a light-emitting diode.

PubMed

Garcia-Sucerquia, Jorge

2013-01-01

By engineering the light from a light-emitting diode (LED) the noises present in digital lensless holographic microscopy (DLHM) are reduced. The partially coherent light from an LED is tailored to produce a spherical wavefront with limited coherence time and the spatial coherence needed by DLHM to work. DLHM with this engineered light source is used to image biological samples that cover areas of the order of mm(2). The ratio between the diameter of the area that is almost coherently illuminated to the diameter of the illumination area is utilized as parameter to quantify the performance of the DLHM with the engineered LED light source. Experimental results show that while the noises can be reduced effectively the spatial resolution can be kept in the micrometer range.

Hazardous Gas Detection Sensor Using Broadband Light-Emitting Diode-Based Absorption Spectroscopy for Space Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Terracciano, Anthony; Thurmond, Kyle; Villar, Michael

As space travel matures and extended duration voyages become increasingly common, it will be necessary to include arrays of early fire detection systems aboard spacefaring vessels, space habitats, and in spacesuits. As gasses that are relevant to combustion and pyrolysis have absorption features in the midinfrared range, it is possible to utilize absorption spectroscopy as a means of detecting and quantifying the concentration of these hazardous compounds. Within this work, a sensor for detecting carbon dioxide has been designed and tested autonomously on a high-altitude balloon flight. The sensor utilizes a 4.2-mm lightemitting diode source, amplitude modulation to characterize speciesmore » concentrations, and frequency modulation to characterize ambient temperature. Future work will include expanding the sensor design to detect other gases, and demonstrating suborbital flight capability.« less

Hazardous Gas Detection Sensor Using Broadband Light-Emitting Diode-Based Absorption Spectroscopy for Space Applications

DOE PAGES

Terracciano, Anthony; Thurmond, Kyle; Villar, Michael; ...

2018-03-12

As space travel matures and extended duration voyages become increasingly common, it will be necessary to include arrays of early fire detection systems aboard spacefaring vessels, space habitats, and in spacesuits. As gasses that are relevant to combustion and pyrolysis have absorption features in the midinfrared range, it is possible to utilize absorption spectroscopy as a means of detecting and quantifying the concentration of these hazardous compounds. Within this work, a sensor for detecting carbon dioxide has been designed and tested autonomously on a high-altitude balloon flight. The sensor utilizes a 4.2-mm lightemitting diode source, amplitude modulation to characterize speciesmore » concentrations, and frequency modulation to characterize ambient temperature. Future work will include expanding the sensor design to detect other gases, and demonstrating suborbital flight capability.« less

LED pumped Nd:YAG laser development program

NASA Technical Reports Server (NTRS)

Farmer, G. I.; Kiang, Y. C.; Lynch, R. J.

1973-01-01

The results of a development program for light emitting diode (LED) pumped Nd:YAG lasers are described. An index matching method to increase the coupling efficiency of the laser is described. A solid glass half-cylinder of 5.0 by 5.6 centimeters was used for index matching and also as a pumping cavity reflector. The laser rods were 1.5 by 56 millimeters with dielectric coatings on both end surfaces. The interfaces between the diode array, glass cylinder, and laser rod were filled with viscous fluid of refractive index n = 1.55. Experiments performed with both the glass cylinder and a gold coated stainless steel reflector of the same dimensions under the same operating conditions indicate that the index matching cylinder gave 159 to 200 percent improvement of coupling efficiency over the metal reflector at various operating temperatures.

Transparent organic light-emitting diodes with balanced white emission by minimizing waveguide and surface plasmonic loss.

PubMed

Zhang, Yi-Bo; Ou, Qing-Dong; Li, Yan-Qing; Chen, Jing-De; Zhao, Xin-Dong; Wei, Jian; Xie, Zhong-Zhi; Tang, Jian-Xin

2017-07-10

It is challenging in realizing high-performance transparent organic light-emitting diodes (OLEDs) with symmetrical light emission to both sides. Herein, an efficient transparent OLED with highly balanced white emission to both sides is demonstrated by integrating quasi-periodic nanostructures into the organic emitter and the metal-dielectric composite top electrode, which can simultaneously suppressing waveguide and surface plasmonic loss. The power efficiency and external quantum efficiency are raised to 83.5 lm W -1 and 38.8%, respectively, along with a bi-directional luminance ratio of 1.26. The proposed scheme provides a facile route for extending application scope of transparent OLEDs for future transparent displays and lightings.

NASA sponsored Light Emitting Diode (LED) development helps in cancer treatment

NASA Technical Reports Server (NTRS)

1997-01-01

What started out as an attempt to develop a light which would allow for the growth of plants in space led to a remarkable discovery: The Light Emitting Diode (LED). This device through extensive study and experimentation has developed into a tool used by surgeons in the fight against brain cancer in children. Pictured is a mock-up of brain surgery being performed. By encapsulating the end of the LED with a balloon, light is diffused over a larger area of the brain allowing the surgeon a better view. This is one of many programs that begin as research for the space program, and through extensive study end up benefitting all of mankind.

Low Level Light Therapy with Light-Emitting Diodes for the Aging Face.

PubMed

Calderhead, R Glen; Vasily, David B

2016-07-01

Low level light therapy (LLLT) with light-emitting diodes (LEDs) is emerging from the mists of black magic as a solid medico-scientific modality, with a substantial buildup of corroborative bodies of evidence for its efficacy and elucidation of the modes of action. Reports are appearing from many different specialties; however, of particular interest to plastic surgeons treating the aging face is the proven action of LED-LLLT on skin cells in both the epidermis and dermis and enhanced blood flow. Thus, LED-LLLT is a safe and effective stand-alone therapy for patients who are prepared to wait until the final effect is perceived. Copyright © 2016 Elsevier Inc. All rights reserved.

High ambient contrast ratio OLED and QLED without a circular polarizer

NASA Astrophysics Data System (ADS)

Tan, Guanjun; Zhu, Ruidong; Tsai, Yi-Shou; Lee, Kuo-Chang; Luo, Zhenyue; Lee, Yuh-Zheng; Wu, Shin-Tson

2016-08-01

A high ambient contrast ratio display device using a transparent organic light emitting diode (OLED) or transparent quantum-dot light-emitting diode (QLED) with embedded multilayered structure and absorber is proposed and its performance is simulated. With the help of multilayered structure, the device structure allows almost all ambient light to get through the display device and be absorbed by the absorber. Because the reflected ambient light is greatly reduced, the ambient contrast ratio of the display system is improved significantly. Meanwhile, the multilayered structure helps to lower the effective refractive index, which in turn improves the out-coupling efficiency of the display system. Potential applications for sunlight readable flexible and rollable displays are emphasized.

A lamp light-emitting diode-induced fluorescence detector for capillary electrophoresis.

PubMed

Xu, Jing; Xiong, Yan; Chen, Shiheng; Guan, Yafeng

2008-07-15

A light-emitting diode-induced fluorescence detector (LED-FD) for capillary electrophoresis was constructed and evaluated. A lamp LED with an enhanced emission spectrum and a band pass filter was used as the excitation light source. Refractive index matching fluid (RIMF) was used in the detection cell to reduce scattering light and the noise level. The limit of detection (LOD) for fluorescein was 1.5 nM (SNR=3). The system exhibited linear responses in the range of 1 x 10(-8) to 5 x 10(-6)M (R=0.999). Application of the lamp LED-FD for the analysis of FITC-labeled ephedra herb extract by capillary electrophoresis was demonstrated.

Nano-honeycomb structured transparent electrode for enhanced light extraction from organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shi, Xiao-Bo; Qian, Min; Wang, Zhao-Kui; Liao, Liang-Sheng

2015-06-01

A universal nano-sphere lithography method has been developed to fabricate nano-structured transparent electrode, such as indium tin oxide (ITO), for light extraction from organic light-emitting diodes (OLEDs). Perforated SiO2 film made from a monolayer colloidal crystal of polystyrene spheres and tetraethyl orthosilicate sol-gel is used as a template. Ordered nano-honeycomb pits on the ITO electrode surface are obtained by chemical etching. The proposed method can be utilized to form large-area nano-structured ITO electrode. More than two folds' enhancement in both current efficiency and power efficiency has been achieved in a red phosphorescent OLED which was fabricated on the nano-structured ITO substrate.

White light emitting diode based on InGaN chip with core/shell quantum dots

NASA Astrophysics Data System (ADS)

Shen, Changyu; Hong, Yan; Ma, Jiandong; Ming, Jiangzhou

2009-08-01

Quantum dots have many applications in optoelectronic device such as LEDs for its many superior properties resulting from the three-dimensional confinement effect of its carrier. In this paper, single chip white light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chip with luminescent colloidal quantum dots (QDs). Two kinds of QDs of core/shell CdSe /ZnS and core/shell/shell CdSe /ZnS /CdS nanocrystals were synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. This two kinds of QDs exhibited high photoluminescence efficiency with a quantum yield more than 41%, and size-tunable emission wavelengths from 500 to 620 nm. The QDs LED mainly consists of flip luminescent InGaN chip, glass ceramic protective coating, glisten cup, QDs using as the photoluminescence material, pyroceram, gold line, electric layer, dielectric layer, silicon gel and bottom layer for welding. The WLEDs had the CIE coordinates of (0.319, 0.32). The InGaN chip white-light-emitting diodes with quantum dots as the emitting layer are potentially useful in illumination and display applications.

Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity

DTIC Science & Technology

1992-10-01

laser light is considered planar. In actuality, the HLP 1400 laser diode used in this experiment has a gaussian profile. This approximation is frequently...return beam is in phase with either the light transmitted through or reflected off the rear facet of the diode laser. In Fig. 3.2, E, is the light ...In the first case an anti-reflection coated laser diode was used. It emitted a broadband spectrum without the feedback. The PCM just lowered the

Blue phosphorescent organic light-emitting diodes using an exciplex forming co-host with the external quantum efficiency of theoretical limit.

PubMed

Shin, Hyun; Lee, Sunghun; Kim, Kwon-Hyeon; Moon, Chang-Ki; Yoo, Seung-Jun; Lee, Jeong-Hwan; Kim, Jang-Joo

2014-07-16

A high-efficiency blue-emitting organic light-emitting diode (OLED) approaching theoretical efficiency using an exciplex-forming co-host composed of N,N'-dicarbazolyl-3,5-benzene (mCP) and bis-4,6-(3,5-di-3-pyridylphenyl)- 2-methylpyrimidine (B3PYMPM) is fabricated. Iridium(III)bis[(4,6-difluorophenyl)- pyridinato-N,C2']picolinate (FIrpic) is used as the emitter, which turns out to have a preferred horizontal dipole orientation in the emitting layer. The OLED shows a maximum external quantum efficiency of 29.5% (a maximum current efficiency of 62.2 cd A(-1) ), which is in perfect agreement with the theoretical prediction. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.

PubMed

Liang, H K; Yu, S F; Yang, H Y

2010-02-15

An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (approximately 150 degrees C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by approximately 5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is approximately 2.2 time larger than that of TM polarization.

High-efficiency non-blocking phosphorescent organic light emitting diode with ultrathin emission layer

NASA Astrophysics Data System (ADS)

Qiu, Jacky; Helander, Michael G.; Wang, Zhibin; Chang, Yi-Lu; Lu, ZhengHong

2012-09-01

Non-blocking Phosphorescent Organic Light Emitting Diode (NB-PHOLED) is a highly simplified device structure that has achieved record high device performance on chlorinated ITO[1], flexible substrates[2], also with Pt based phosphorescent dopants[3] and NB-PHOLED has significantly reduced efficiency roll-off[4]. The principle novel features of NB-PHOLED is the absence of blocking layer in the OLED stack, as well as the absence of organic hole injection layer, this allows for reduction of carrier accumulation in between organic layers and result in higher efficiencies.

Room temperature polariton light emitting diode with integrated tunnel junction.

PubMed

Brodbeck, S; Jahn, J-P; Rahimi-Iman, A; Fischer, J; Amthor, M; Reitzenstein, S; Kamp, M; Schneider, C; Höfling, S

2013-12-16

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

Plastic cup traps equipped with light-emitting diodes for monitoring adult Bemisia tabaci (Homoptera: Aleyrodidae).

PubMed

Chu, Chang-Chi; Jackson, Charles G; Alexander, Patrick J; Karut, Kamil; Henneberry, Thomas J

2003-06-01

Equipping the standard plastic cup trap, also known as the CC trap, with lime-green light-emitting diodes (LED-plastic cup trap) increased its efficacy for catching Bemisia tabaci by 100%. Few Eretmocerus eremicus Rose and Zolnerowich and Encarsia formosa Gahan were caught in LED-plastic cup traps. The LED-plastic cup traps are less expensive than yellow sticky card traps for monitoring adult whiteflies in greenhouse crop production systems and are more compatible with whitefly parasitoids releases for Bemisia nymph control.

Highly efficient organic light-emitting diodes with a quantum dot interfacial layer.

PubMed

Ryu, Seung Yoon; Hwang, Byoung Har; Park, Ki Wan; Hwang, Hyeon Seok; Sung, Jin Woo; Baik, Hong Koo; Lee, Chang Ho; Song, Seung Yong; Lee, Jun Yeob

2009-02-11

Advanced organic light-emitting diodes (OLEDs), based on a multiple structure, were achieved in combination with a quantum dot (QD) interfacial layer. The authors used core/shell CdSe/ZnS QDs passivated with trioctylphosphine oxide (TOPO) and TOPO-free QDs as interlayers. Multiple-structure OLEDs (MOLEDs) with TOPO-free QDs showed higher device efficiency because of a well-defined interfacial monolayer formation. Additionally, the three-unit MOLED showed high performance for device efficiency with double-structured QD interfacial layers due to the enhanced charge balance and recombination probability.

Colloidal quantum dot active layers for light emitting diodes

NASA Astrophysics Data System (ADS)

Pagan, Jennifer G.; Stokes, Edward B.; Patel, Kinnari; Burkhart, Casey C.; Ahrens, Michael T.; Barletta, Philip T.; O'Steen, Mark

2006-07-01

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped overgrowth GaN are examined via circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). Electroluminescence of LED test structures is reported, and an ideality factor of n = 1.6 is demonstrated.

Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

NASA Astrophysics Data System (ADS)

Bicanic, D.; Skenderović, H.; Marković, K.; Dóka, O.; Pichler, L.; Pichler, G.; Luterotti, S.

2010-03-01

The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes. The concentration of lycopene in selected products ranges from a few mg to several tens mg per 100 g fresh weight. The HPLC was used as the well established reference method.

Nonlinear symmetry breaking in photometamaterials

NASA Astrophysics Data System (ADS)

Gorlach, Maxim A.; Dobrykh, Dmitry A.; Slobozhanyuk, Alexey P.; Belov, Pavel A.; Lapine, Mikhail

2018-03-01

We design and analyze theoretically photometamaterials with each meta-atom containing both photodiode and light-emitting diode. Illumination of the photodiode by the light-emitting diode gives rise to an additional optical feedback within each unit cell, which strongly affects resonant properties and nonlinear response of the meta-atom. In particular, we demonstrate that inversion symmetry breaking occurs upon a certain threshold magnitude of the incident wave intensity resulting in an abrupt emergence of second-harmonic generation, which was not originally available, as well as in the reduced third-harmonic signal.

Solar-energy production and energy-efficient lighting: photovoltaic devices and white-light-emitting diodes using poly(2,7-fluorene), poly(2,7-carbazole), and poly(2,7-dibenzosilole) derivatives.

PubMed

Beaupré, Serge; Boudreault, Pierre-Luc T; Leclerc, Mario

2010-02-23

World energy needs grow each year. To address global warming and climate changes the search for renewable energy sources with limited greenhouse gas emissions and the development of energy-efficient lighting devices are underway. This Review reports recent progress made in the synthesis and characterization of conjugated polymers based on bridged phenylenes, namely, poly(2,7-fluorene)s, poly(2,7-carbazole)s, and poly(2,7-dibenzosilole)s, for applications in solar cells and white-light-emitting diodes. The main strategies and remaining challenges in the development of reliable and low-cost renewable sources of energy and energy-saving lighting devices are discussed.

Coumarin-Based Oxime Esters: Photobleachable and Versatile Unimolecular Initiators for Acrylate and Thiol-Based Click Photopolymerization under Visible Light-Emitting Diode Light Irradiation.

PubMed

Li, Zhiquan; Zou, Xiucheng; Zhu, Guigang; Liu, Xiaoya; Liu, Ren

2018-05-09

Developing efficient unimolecular visible light-emitting diode (LED) light photoinitiators (PIs) with photobleaching capability, which are essential for various biomedical applications and photopolymerization of thick materials, remains a great challenge. Herein, we demonstrate the synthesis of a series of novel PIs, containing coumarin moieties as chromophores and oxime ester groups as initiation functionalities and explore their structure-activity relationship. The investigated oxime esters can effectively induce acrylates and thiol-based click photopolymerization under 450 nm visible LED light irradiation. The initiator O-3 exhibited excellent photobleaching capability and enabled photopolymerization of thick materials (∼4.8 mm). The efficient unimolecular photobleachable initiators show great potential in dental materials and 3D printings.

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

NASA Astrophysics Data System (ADS)

Mazzeo, M.; Genco, A.; Gambino, S.; Ballarini, D.; Mangione, F.; Di Stefano, O.; Patanè, S.; Savasta, S.; Sanvitto, D.; Gigli, G.

2014-06-01

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Synthesis and photoluminescence properties of a cyan-emitting phosphor Ca3(PO4)2:Eu2+ for white light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Wenli; Han, Jin; Zhang, Xuejie; Qiu, Zhongxian; Xie, Qingji; Liang, Hongbin; Lian, Shixun; Wang, Jing

2015-01-01

In this paper, a cyan-emitting phosphor Ca3(PO4)2:Eu2+ (TCP:Eu2+) was synthesized and evaluated as a candidate for white light emitting diodes (WLEDs). This phosphor shows strong and broad absorption in 250-450 nm region, but the emission spectrum is prominent at around 480 nm. The emission intensity of the TCP:Eu2+ was found to be 60% and 82% of that of the commercial BaMgAl10O17:Eu2+ (BAM) under excitation at 340 nm and 370 nm, respectively. Upon excitation at 370 nm, the absolute internal and external quantum efficiencies of the Ca3(PO4)2:1.5%Eu2+ are 60% and 42%, respectively. Moreover, a white LED lamp was fabricated by coating TCP:Eu2+ with a blue-emitting BAM and a red-emitting CaAlSiN3:Eu2+ on a near-ultraviolet (375 nm) LED chip, driven by a 350 mA forward bias current, and it produces an intense white light with a color rendering index of 75.

Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

NASA Astrophysics Data System (ADS)

Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob

2015-07-01

We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq)2(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq)2(acac). The lifetime of device (t95: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

High-efficiency white OLEDs based on small molecules

NASA Astrophysics Data System (ADS)

Hatwar, Tukaram K.; Spindler, Jeffrey P.; Ricks, M. L.; Young, Ralph H.; Hamada, Yuuhiko; Saito, N.; Mameno, Kazunobu; Nishikawa, Ryuji; Takahashi, Hisakazu; Rajeswaran, G.

2004-02-01

Eastman Kodak Company and SANYO Electric Co., Ltd. recently demonstrated a 15" full-color, organic light-emitting diode display (OLED) using a high-efficiency white emitter combined with a color-filter array. Although useful for display applications, white emission from organic structures is also under consideration for other applications, such as solid-state lighting, where high efficiency and good color rendition are important. By incorporating adjacent blue and orange emitting layers in a multi-layer structure, highly efficient, stable white emission has been attained. With suitable host and dopant combinations, a luminance yield of 20 cd/A and efficiency of 8 lm/W have been achieved at a drive voltage of less than 8 volts and luminance level of 1000 cd/m2. The estimated external efficiency of this device is 6.3% and a high level of operational stability is observed. To our knowledge, this is the highest performance reported so far for white organic electroluminescent devices. We will review white OLED technology and discuss the fabrication and operating characteristics of these devices.

Conversion of Biowaste Asian Hard Clam (Meretrix lusoria) Shells into White-Emitting Phosphors for Use in Neutral White LEDs.

PubMed

Chang, Tsung-Yuan; Wang, Chih-Min; Lin, Tai-Yuan; Lin, Hsiu-Mei

2016-12-02

The increasing volume and complexity of waste associated with the modern economy poses a serious risk to ecosystems and human health. However, the remanufacturing and recycling of waste into usable products can lead to substantial resource savings. In the present study, clam shell waste was first transformed into pure and well-crystallized single-phase white light-emitting phosphor Ca₉Gd(PO₄)₇:Eu 2+ ,Mn 2+ materials. The phosphor Ca₉Gd(PO₄)₇:Eu 2+ ,Mn 2+ materials were synthesized by the solid-state reaction method and the carbothermic reduction process, and then characterized and analyzed by means of X-ray diffraction (XRD) and photoluminescence (PL) measurements. The structural and luminescent properties of the phosphors were investigated as well. The PL and quantum efficiency measurements showed that the luminescence properties of clam shell-based phosphors were comparable to that of the chemically derived phosphors. Moreover, white light-emitting diodes were fabricated through the integration of 380 nm chips and single-phase white light-emitting phosphors (Ca 0.979 Eu 0.006 Mn 0.015 )₉Gd(PO₄)₇ into a single package of a white light emitting diode (WLED) emitting a neutral white light of 5298 K with color coordinates of (0.337, 0.344).

Conversion of Biowaste Asian Hard Clam (Meretrix lusoria) Shells into White-Emitting Phosphors for Use in Neutral White LEDs

PubMed Central

Chang, Tsung-Yuan; Wang, Chih-Min; Lin, Tai-Yuan; Lin, Hsiu-Mei

2016-01-01

The increasing volume and complexity of waste associated with the modern economy poses a serious risk to ecosystems and human health. However, the remanufacturing and recycling of waste into usable products can lead to substantial resource savings. In the present study, clam shell waste was first transformed into pure and well-crystallized single-phase white light-emitting phosphor Ca9Gd(PO4)7:Eu2+,Mn2+ materials. The phosphor Ca9Gd(PO4)7:Eu2+,Mn2+ materials were synthesized by the solid-state reaction method and the carbothermic reduction process, and then characterized and analyzed by means of X-ray diffraction (XRD) and photoluminescence (PL) measurements. The structural and luminescent properties of the phosphors were investigated as well. The PL and quantum efficiency measurements showed that the luminescence properties of clam shell-based phosphors were comparable to that of the chemically derived phosphors. Moreover, white light-emitting diodes were fabricated through the integration of 380 nm chips and single-phase white light-emitting phosphors (Ca0.979Eu0.006Mn0.015)9Gd(PO4)7 into a single package of a white light emitting diode (WLED) emitting a neutral white light of 5298 K with color coordinates of (0.337, 0.344). PMID:28774101

Electroplex as a New Concept of Universal Host for Improved Efficiency and Lifetime in Red, Yellow, Green, and Blue Phosphorescent Organic Light‐Emitting Diodes

PubMed Central

Song, Wook; Cho, Yong Joo; Yu, Hyeonghwa; Aziz, Hany; Lee, Kang Mun

2017-01-01

Abstract A new concept of host, electroplex host, is developed for high efficiency and long lifetime phosphorescent organic light‐emitting diodes by mixing two host materials generating an electroplex under an electric field. A carbazole‐type host and a triazine‐type host are selected as the host materials to form the electroplex host. The electroplex host is found to induce light emission through an energy transfer process rather than charge trapping, and universally improves the lifetime of red, yellow, green, and blue phosphorescent organic light‐emitting diodes by more than four times. Furthermore, the electroplex host shows much longer lifetime than a common exciplex host. This is the first demonstration of using the electroplex as the host of high efficiency and long lifetime phosphorescent organic light‐emitting diodes. PMID:29610726

High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

NASA Astrophysics Data System (ADS)

Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

2010-10-01

White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

Natural substrate lift-off technique for vertical light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen

2014-04-01

Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

Importance of 'blue' photon levels for lettuce seedlings grown under red-light-emitting diodes

NASA Technical Reports Server (NTRS)

Hoenecke, M. E.; Bula, R. J.; Tibbitts, T. W.

1992-01-01

Light-emitting diodes (LEDs) with high-intensity output are being studied as a photosynthetic light source for plants. High-output LEDs have peak emission at approximately 660 nm concentrated in a waveband of +/- 30 nm. Lettuce (Lactuca sativa Grand Rapids') seedlings developed extended hypocotyls and elongated cotyledons when grown under these LEDs as a sole source of irradiance. This extension and elongation was prevented when the red LED radiation was supplemented with more than 15 micromoles m-2 s-1 of 400- to 500-nm photons from blue fluorescent lamps. Blue radiation effects were independent of the photon level of the red radiation.

Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices

PubMed Central

O'Toole, Martina; Diamond, Dermot

2008-01-01

The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements. PMID:27879829

Noniterative algorithm for improving the accuracy of a multicolor-light-emitting-diode-based colorimeter.

PubMed

Yang, Pao-Keng

2012-05-01

We present a noniterative algorithm to reliably reconstruct the spectral reflectance from discrete reflectance values measured by using multicolor light emitting diodes (LEDs) as probing light sources. The proposed algorithm estimates the spectral reflectance by a linear combination of product functions of the detector's responsivity function and the LEDs' line-shape functions. After introducing suitable correction, the resulting spectral reflectance was found to be free from the spectral-broadening effect due to the finite bandwidth of LED. We analyzed the data for a real sample and found that spectral reflectance with enhanced resolution gives a more accurate prediction in the color measurement.